TW201933464A - Semiconductor wafer evaluation method and semiconductor wafer production method - Google Patents
Semiconductor wafer evaluation method and semiconductor wafer production method Download PDFInfo
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- G01N21/84—Systems specially adapted for particular applications
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Abstract
Description
本發明，係關於半導體晶圓的評價方法及半導體晶圓的製造方法The present invention relates to a method for evaluating a semiconductor wafer and a method for manufacturing a semiconductor wafer
近年來，關於半導體晶圓，進行評價晶圓外周緣部的形狀(例如參照專利文件1)。
[先行技術文件]
[專利文件]In recent years, regarding the semiconductor wafer, the shape of the outer peripheral edge portion of the wafer is evaluated (for example, refer to Patent Document 1).
[advance technical documents]
[Patent Document]
[專利文件1]專利第2016-130738號公開公報[Patent Document 1] Patent Publication No. 2016-130738
[發明所欲解決的課題][Problems to be solved by the invention]
一般，對於從鑄錠切出的晶圓施行各種加工，製造半導體晶圓。從鑄錠切出的晶圓的外周緣部，保持原狀的話，因為有角部，容易產生裂痕或碎片。於是，通常對半導體晶圓的元件形成面側的表面(正面)側以及正面的相反側的表面(背面)側中至少一方的外周緣部施行去角加工，形成去角面。關於此去角面，在專利文件1中提出，為了以白色顯示去角面取得圖像，根據此圖像的寬度尺寸算出去角面的寬度尺寸(參照專利文件1的段落0060～0062)。以下，所謂半導體晶圓的「表面」，只要不特別記載，係指上述的正面及背面的任一方或兩方。Generally, a semiconductor wafer is manufactured by performing various processes on a wafer cut out from an ingot. When the outer peripheral edge portion of the wafer cut out from the ingot remains as it is, cracks or chips are likely to occur due to the corner portion. Then, at least one of the outer peripheral edge portions on the surface (front side) side on the element forming surface side of the semiconductor wafer and the surface (back surface) side on the opposite side of the front surface is subjected to chamfering to form a chamfered surface. With respect to this chamfering surface, it is proposed in Patent Document 1 that the image is obtained by displaying the chamfered surface in white, and the width dimension of the chamfered surface is calculated from the width dimension of the image (see paragraphs 0060 to 0062 of Patent Document 1). Hereinafter, the "surface" of the semiconductor wafer means either or both of the front surface and the back surface unless otherwise specified.
半導體晶圓表面中，正面側的主面，係其上形成元件的平面，其背側的平面是背面側的主面。晶圓外周緣部中形成的去角面，對鄰接的主面具有傾斜的面形狀。因此，看到半導體晶圓的厚度方向的剖面形狀時，在主面與鄰接主面的去角面的邊界部中，形狀變化很大。此主面與去角面的邊界部形狀，可以作為用以預測半導體元件的製造步驟中容易發生碎片、瑕疵等的指標。例如，半導體元件的製造步驟中，配合熱處理時支持晶圓的晶圓支柱形狀，由於適當設定晶圓表面(例如背面)與去角面的邊界部形狀，因為接觸引起的邊界部的碎片或瑕疵難以發生，可以降低碎片或瑕疵為原因的錯位(slip)或生塵的發生率。但是，專利文件1中記載的方法，係求出去角面的寬度尺寸的方法，以專利文件1中記載的方法，不能評價去角面與主面的邊界部形狀。In the surface of the semiconductor wafer, the main surface on the front side is a plane on which the elements are formed, and the plane on the back side is the main surface on the back side. The chamfered surface formed in the outer peripheral portion of the wafer has an inclined surface shape to the adjacent main surface. Therefore, when the cross-sectional shape of the semiconductor wafer in the thickness direction is seen, the shape changes greatly at the boundary portion between the main surface and the chamfered surface of the adjacent main surface. The shape of the boundary portion between the main surface and the chamfered surface can be used as an index for predicting that chipping, flaws, and the like are likely to occur in the manufacturing process of the semiconductor element. For example, in the manufacturing step of the semiconductor element, the shape of the wafer pillar supporting the wafer during the heat treatment is matched, and the shape of the boundary portion between the wafer surface (for example, the back surface) and the chamfered surface is appropriately set, and the boundary portion is broken or flawed due to the contact. It is difficult to occur, and it can reduce the incidence of slip or dust caused by debris or sputum. However, the method described in Patent Document 1 is a method of obtaining the width dimension of the chamfered surface, and the method described in Patent Document 1 cannot evaluate the shape of the boundary portion between the chamfered surface and the main surface.
於是，本發明的目的，係提供用以評價半導體晶圓的去角面與主面的邊界部形狀之新方法。
[用以解決課題的手段]Accordingly, it is an object of the present invention to provide a new method for evaluating the shape of a boundary portion between a chamfered surface and a main surface of a semiconductor wafer.
[Means to solve the problem]
本發明的一形態，係關於半導體晶圓的評價方法(以下也只記載為「評價方法」)，包含：
藉由接收向評價對象的半導體晶圓的一方表面側照射光得到的反射光，取得反射像作為明視野像；
藉由接收向評價對象的半導體晶圓的上述表面側照射光得到的散射光，取得散射像作為暗視野像；
求出上述反射像中觀察的明部頻帶與上述散射像中觀察的明部頻帶的間隔L；以及
評價對象的半導體晶圓係在晶圓外周緣部形成去角面的半導體晶圓，根據上述L，評價評價對象的半導體晶圓被照射上述光的表面側的主面與鄰接此主面的去角面之邊界部形狀。An aspect of the present invention relates to a method for evaluating a semiconductor wafer (hereinafter also referred to as "evaluation method"), and includes:
The reflected light obtained by irradiating light to one surface side of the semiconductor wafer to be evaluated is received, and the reflected image is obtained as a bright-field image;
The scattered image obtained by irradiating light to the surface side of the semiconductor wafer to be evaluated is received as a dark-field image;
The distance L between the bright band observed in the reflected image and the bright band observed in the scattered image is obtained; and the semiconductor wafer to be evaluated is a semiconductor wafer having a chamfered surface formed on the outer peripheral edge of the wafer, according to the above L. The semiconductor wafer to be evaluated for evaluation is subjected to the boundary portion shape of the main surface on the surface side of the light and the chamfered surface adjacent to the main surface.
本發明者專心重複研討的結果，關於上述間隔L，新發現去角面與主面的邊界部形狀越平緩，L值越大，去角面與主面的邊界部形狀越陡峭，L值越小。因此，根據這樣的L值，可以評價主面與去角面的邊界部形狀的平緩度/陡峭度。As a result of repeated discussions, the inventors have found that the more the L-value is, the steeper the L-value is, the steeper the L-value is, and the steeper the L-value is, the more steep the L-value is, the steeper the L-value is, the steeper the L-value is. small. Therefore, based on such an L value, the gentleness/steepness of the shape of the boundary portion between the main surface and the chamfered surface can be evaluated.
一形態中，上述評價方法，可以包含從比上述邊境部的鉛直方向上方更外側，向至少包含上述去角面的上述邊界部側的區域以及上述邊界部的上述去角面側的區域之部分照射光，取得上述散射像。In one aspect, the evaluation method may include a region from the side of the boundary portion including at least the chamfered surface and a portion of the region on the side of the chamfered surface of the boundary portion, from an outer side in a direction higher than an upper side in a vertical direction of the boundary portion. The light is irradiated to obtain the above-described scattered image.
一形態中，上述評價方法，可以包含從上述邊境部的鉛直方向上方，向至少包含上述主面的上述邊界部側的區域以及上述邊界部的上述主面側的區域之部分照射光，取得上述反射像。In one aspect, the evaluation method may include irradiating light to a portion of the region including the boundary portion side of the main surface and the region of the main surface side of the boundary portion from the upper side in the vertical direction of the boundary portion, and acquiring the light. Reflective image.
一形態中，上述評價方法，可以包含以上述主面的法線方向為軸旋轉評價對象的半導體晶圓，進行複數次取得上述散射像以及上述反射像，在評價對象的半導體晶圓的複數不同處中求出上述L。In one aspect, the evaluation method may include rotating the semiconductor wafer to be evaluated by using the normal direction of the main surface as an axis, and acquiring the scattered image and the reflected image a plurality of times, and the plurality of semiconductor wafers to be evaluated are different. Find the above L in the place.
本發明的又一形態係關於半導體晶圓的製造方法，包含：
製造作為製品出貨的候補半導體晶圓；
以上述評價方法評價上述候補半導體晶圓；以及
將評價結果判定為良品的半導體晶圓提交作為製品半導體晶圓出貨的準備。Still another aspect of the present invention relates to a method of manufacturing a semiconductor wafer, comprising:
Manufacturing of candidate semiconductor wafers for product shipments;
The candidate semiconductor wafer is evaluated by the above-described evaluation method; and the semiconductor wafer in which the evaluation result is determined to be good is submitted as a preparation for shipment of the product semiconductor wafer.
本發明的又一形態係關於半導體晶圓的製造方法，包含：
製造包含複數的半導體晶圓之半導體晶圓批量；
從上述半導體晶圓批量抽出至少1個半導體晶圓；
以上述評價方法評價上述抽出的半導體晶圓；以及
將與上述評價結果判定為良品的半導體晶圓相同的半導體晶圓批量的半導體晶圓提交作為製品半導體晶圓出貨的準備。Still another aspect of the present invention relates to a method of manufacturing a semiconductor wafer, comprising:
Manufacturing a semiconductor wafer batch containing a plurality of semiconductor wafers;
Extracting at least one semiconductor wafer from the semiconductor wafer in batches;
The semiconductor wafer to be extracted is evaluated by the above-described evaluation method; and the semiconductor wafer of the same semiconductor wafer batch as the semiconductor wafer determined as the good evaluation result is submitted as a preparation for shipment of the product semiconductor wafer.
本發明的又一形態係關於半導體晶圓的製造方法，包含：
在測試製造條件下製造評價用半導體晶圓；
以上述評價方法評價上述製造的評價用半導體晶圓；
根據上述評價結果，決定以上述測試製造條件加上變更的製造條件作為實製造條件，或是決定上述測試製造條件作為實製造條件；以及
在上述決定的實製造條件下，製造半導體晶圓。Still another aspect of the present invention relates to a method of manufacturing a semiconductor wafer, comprising:
Manufacturing a semiconductor wafer for evaluation under test manufacturing conditions;
The semiconductor wafer for evaluation prepared above is evaluated by the above evaluation method;
Based on the above evaluation results, it is determined that the above-described test manufacturing conditions plus the changed manufacturing conditions are actual manufacturing conditions, or the above-described test manufacturing conditions are determined as actual manufacturing conditions, and the semiconductor wafer is manufactured under the above-described actual manufacturing conditions.
一形態中，加上上述變更的製造條件，可以是半導體晶圓表面的研磨處理條件以及去角加工條件中至少一方。
[發明效果]In one aspect, the manufacturing conditions described above may be at least one of polishing processing conditions and chamfering processing conditions on the surface of the semiconductor wafer.
[Effect of the invention]
根據本發明的一形態，可以提供用以評價半導體晶圓的去角面與主面的邊界部形狀之新方法。According to an aspect of the present invention, a new method for evaluating the shape of a boundary portion between a chamfered surface and a main surface of a semiconductor wafer can be provided.
[半導體晶圓的評價方法]
本發明的一形態，係關於半導體晶圓的評價方法，包含：藉由接收向評價對象的半導體晶圓的一方表面側照射光得到的反射光，取得反射像作為明視野像；藉由接收向評價對象的半導體晶圓的上述表面側照射光得到的散射光，取得散射像作為暗視野像；求出上述反射像中觀察的明部頻帶與上述散射像中觀察的明部頻帶的間隔L；以及評價對象的半導體晶圓係在晶圓外周緣部形成去角面的半導體晶圓，根據上述L，評價評價對象的半導體晶圓被照射上述光的表面側的主面與鄰接此主面的去角面之邊界部形狀。
以下，關於評價方法，更詳細說。[Method for evaluating semiconductor wafers]
According to an aspect of the invention, there is provided a semiconductor wafer evaluation method comprising: receiving a reflected light obtained by irradiating light to one surface side of a semiconductor wafer to be evaluated, and obtaining a reflected image as a bright-field image; The scattered light obtained by the light irradiation on the surface side of the semiconductor wafer of the evaluation target is obtained as a dark field image, and the distance L between the bright band observed in the reflected image and the bright band observed in the scattered image is obtained; And the semiconductor wafer to be evaluated is a semiconductor wafer having a chamfered surface formed on the outer peripheral edge of the wafer, and the semiconductor wafer to be evaluated by the evaluation is irradiated with the main surface on the surface side of the light and adjacent to the main surface. The shape of the boundary of the corner surface.
Hereinafter, the evaluation method will be described in more detail.
＜評價對象的半導體晶圓＞
上述評價方法的評價對象的半導體晶圓，只要是對晶圓的外周緣部施行去角加工形成去角面的半導體晶圓即可。評價對象的半導體晶圓，可以是一般用作半導體基板的各種半導體晶圓。例如，作為半導體晶圓的具體例，可以舉出各種矽晶圓。矽晶圓，例如，可以是從單晶矽鑄錠切出後經過去角加工等的各種加工的單晶矽晶圓。作為這樣的單晶矽晶圓的具體例，例如，可以舉出施行研磨在表面上具有研磨面的拋光晶圓。又，矽晶圓，也可以是具有單晶矽晶圓上具有磊晶層的磊晶晶圓、單晶矽晶圓上以回火處理形成改質層的回火晶圓等的各種矽晶圓。<Semiconductor wafer for evaluation target>
The semiconductor wafer to be evaluated by the above-described evaluation method may be a semiconductor wafer which is subjected to a chamfering process on the outer peripheral edge portion of the wafer to form a chamfered surface. The semiconductor wafer to be evaluated may be various semiconductor wafers generally used as semiconductor substrates. For example, as a specific example of the semiconductor wafer, various germanium wafers can be cited. The germanium wafer may be, for example, a single crystal germanium wafer which has been subjected to various processes such as chamfering after being cut out from a single crystal germanium ingot. As a specific example of such a single crystal germanium wafer, for example, a polished wafer having a polished surface on the surface can be polished. Further, the tantalum wafer may be various twin crystals having an epitaxial wafer having an epitaxial layer on a single crystal germanium wafer, and a tempered wafer on a single crystal germanium wafer which is tempered to form a modified layer. circle.
＜反射像以及散射像的取得＞
用以取得反射像的光照射以及用以取得散射像的光照射，向包含應評價評價對象的半導體晶圓形狀的邊界部的表面側進行。本發明者們想出利用這樣的光照射取得的反射像(明視野像)中觀察的明部頻帶，對應經由邊境部與去角面鄰接的主面的邊界部側的區域，散射像(暗視野像)中觀察的明部頻帶，對應經由邊境部與主面鄰接的去角面的邊界部側的區域。又本發明者們想出，兩明部頻帶之間的區域對應邊界部，兩明部頻帶的間隔L，係從包含應評價形狀的邊界部之表面側看之際對應觀察評價對象的半導體晶圓的邊界部的寬度。於是，邊界部的形狀越平緩，此寬度越寬，越陡峭越窄，是本發明者們專心研討的結果，新發現。因此，兩明部頻帶的間隔L，可以作為邊界部的形狀評價的指標。詳細說來，可以判定L值越大邊界部的形狀越平緩，L值越小邊界部的形狀越陡峭。
以下，關於反射像的取得以及散射像的取得，分別更詳細說明。<Response of image and scattering image>
The light irradiation for obtaining the reflection image and the light irradiation for obtaining the scattering image are performed on the surface side of the boundary portion including the shape of the semiconductor wafer to be evaluated. The present inventors have conceived a bright band observed in a reflection image (bright-field image) obtained by such light irradiation, and corresponds to a region on the boundary portion side of the main surface adjacent to the declination surface via the boundary portion, and a scattering image (dark The bright band observed in the field of view image corresponds to the region on the boundary portion side of the chamfered surface that is adjacent to the main surface via the boundary portion. Further, the inventors of the present invention have conceived that the region between the two bright band corresponds to the boundary portion, and the interval L between the two bright band is the semiconductor crystal corresponding to the observation evaluation when viewed from the surface side of the boundary portion including the shape to be evaluated. The width of the border of the circle. Therefore, the flatter the shape of the boundary portion, the wider the width, the narrower and narrower, which is a result of intensive research by the inventors and a new discovery. Therefore, the interval L between the two bright bands can be used as an index for the shape evaluation of the boundary portion. In detail, it can be determined that the larger the L value is, the more gentle the shape of the boundary portion is, and the smaller the L value is, the steeper the shape of the boundary portion is.
Hereinafter, the acquisition of the reflection image and the acquisition of the scattering image will be described in more detail.
(反射像的取得)
上述評價方法，包含藉由接收向包含應評價評價對象的半導體晶圓形狀的邊界部之表面側照射光得到的反射光，取得反射像作為明視野像。為了反射像取得照射的光波長，根據評價的容易性觀點，最好是容易取得的光源以及以受光部可對應的可見光區域(360～830nm(毫微米)的範圍)的波長。作為用以取得反射像的光照射系，可以使用眾所周知的構成。例如，可以舉出作為用以取得反射像的光照射使用的光源，LED(發光二極體)等眾所周知的光源。本發明以及本說明書中，以應評價形狀的邊境部的鉛直方向(此方向，與「主面的法線方向」一致。)的上方為基準，稱晶圓外周緣側為外側，晶圓主面側為內側。假設以上述鉛直方向的上方為基準的00方向直交且通過應評價形狀的邊境部的晶圓半徑方向為90(0)進行。又，本發明以及本說明書中，關於角度或方向的記載，容許13
又，評價對象的半導體晶圓表面上為了取得反射像光照射的部分，最好至少包含主面的邊界部側區域以及邊界部的主面側區域。作為用以取得反射像的受光系，可以使用眾所周知的構成。受光系，例如，可以包含用以引導來自半導體晶圓表面的反射光至受光部的鏡子。又，作為受光部，例如可以使用線掃描攝影機。本發明者們想出，這樣取得的反射像(明視野像)中觀察的明部頻帶，對應經由邊境部與去角面鄰接的主面的邊境部側區域。因為取得反射像作為原理上與二值化像相同的像，反射像中明部與暗部的邊界清楚，可以容易明確指定。(obtainment of reflection image)
In the above-described evaluation method, the reflected light obtained by irradiating light to the surface side of the boundary portion of the shape of the semiconductor wafer to be evaluated and evaluated is received, and the reflected image is obtained as a bright-field image. In order to reflect the wavelength of the light to be irradiated, it is preferable that the light source can be easily obtained and the visible light region (range of 360 to 830 nm (nanometer)) that can be obtained by the light receiving portion. As a light irradiation system for obtaining a reflection image, a well-known configuration can be used. For example, a light source used as a light source for obtaining a reflection image, and a well-known light source such as an LED (Light Emitting Diode) can be cited. In the present invention and the present specification, the upper side of the outer peripheral edge of the wafer is referred to as the outer side of the wafer in the vertical direction of the boundary portion to be evaluated (this direction coincides with the "normal direction of the main surface"). The side is on the inside. It is assumed that the direction of the 00 in the vertical direction with respect to the upper side in the above-described vertical direction is orthogonal to each other and the radial direction of the wafer at the boundary portion of the shape to be evaluated is 90 (0). Further, in the present invention and the present specification, the description of the angle or the direction allows 13
Further, it is preferable that at least the boundary portion side region of the main surface and the main surface side region of the boundary portion are included in the surface of the semiconductor wafer to be evaluated for obtaining the reflected image light. As the light receiving system for obtaining a reflection image, a well-known configuration can be used. The light receiving system, for example, may include a mirror for guiding reflected light from the surface of the semiconductor wafer to the light receiving portion. Further, as the light receiving unit, for example, a line scan camera can be used. The inventors of the present invention have conceived that the bright band observed in the reflection image (bright-field image) thus obtained corresponds to the boundary portion side region of the main surface adjacent to the declination surface via the boundary portion. Since the reflection image is obtained as the same image as the binarized image in principle, the boundary between the bright portion and the dark portion in the reflection image is clear, and can be easily specified.
(散射像的取得)
上述評價方法中包含，藉由接收向包含應評價評價對象的半導體晶圓形狀的境界部之表面側照射光得到的散射光，取得散射像作為暗視野像。為了取得散射像照射的光波長，根據評價的容易性觀點，最好是容易取得的光源以及以受光部可對應的可見光區域(360～830nm(毫微米)的範圍)的波長。作為用以取得散射像的光照射系，可以使用眾所周知的構成。例如，作為用以取得散射像的光照射使用的光源，可以舉出LED等眾所周知的光源。用以取得散射像的光照射，最好從比應評價形狀的邊界部的鉛直方向的上方更外側進行。假設以上述鉛直方向的上方為基準的0090(0)從外側的1050204020
又，評價對象的半導體晶圓表面上為了取得散射像光照射的部分，最好至少包含去角面的邊界部側區域以及邊界部的去角側區域。作為用以取得散射像的受光系，可以使用眾所周知的構成。受光系，例如，可以包含用以引導來自半導體晶圓表面的散射光至受光部的鏡子。又，作為受光部，例如可以使用線掃描攝影機。本發明者們想到這樣取得的散射像(暗視野像)中觀察的明部頻帶，對應經由邊境部與主面鄰接的去角面的邊境部側區域。關於散射像，對明亮度(Brightness)設定臨界值，散射像中區分明亮度在臨界值以上的部分為明部，低於臨界值的部份為暗部，可以明確指定明部頻帶。明亮度的臨界值，例如可以為0。(obtaining of scattering image)
In the above-described evaluation method, the scattered light obtained by irradiating light to the surface side of the boundary portion including the shape of the semiconductor wafer to be evaluated is obtained, and the scattered image is obtained as a dark-field image. In order to obtain the wavelength of light to be irradiated by the scattering image, it is preferable that the light source is easily obtained and the wavelength of the visible light region (range of 360 to 830 nm (nanometer)) that can be obtained by the light receiving portion. As a light irradiation system for obtaining a scattering image, a well-known configuration can be used. For example, as a light source used for light irradiation for obtaining a scattering image, a well-known light source such as an LED can be cited. It is preferable that the light irradiation for obtaining the scattered image is performed from the upper side in the vertical direction of the boundary portion of the shape to be evaluated. Assume that 0090 (0) from the top in the above vertical direction is 1050204020 from the outside.
Further, in order to obtain the portion irradiated with the scattered image light on the surface of the semiconductor wafer to be evaluated, it is preferable to include at least the boundary portion side region of the chamfered surface and the chamfered side region of the boundary portion. As the light receiving system for obtaining a scattering image, a well-known configuration can be used. The light receiving system, for example, may include a mirror for guiding scattered light from the surface of the semiconductor wafer to the light receiving portion. Further, as the light receiving unit, for example, a line scan camera can be used. The inventors of the present invention thought of the bright portion band observed in the scattering image (dark field image) thus obtained, and corresponded to the boundary portion side region of the chamfered surface adjacent to the main surface via the boundary portion. Regarding the scattering image, a critical value is set for the brightness (Brightness), and a portion in which the brightness is equal to or greater than the critical value in the scattered image is a bright portion, and a portion below the critical value is a dark portion, and the bright band can be clearly specified. The critical value of brightness, for example, can be zero.
不管以上說明的反射像的取得以及散射像的取得順序，哪個先實施都可以。Regardless of the acquisition of the reflection image described above and the order in which the scattering image is acquired, it is possible to implement either of them first.
(邊界部的形狀評價)
如上述，明確指定反射像(明視野像)中的明部頻帶以及散射像(暗視野像)中的明部頻帶後，求出兩明部頻帶的間隔L。可以求出間隔L，作為反射像中明確指定的明部頻帶的外周緣部側端部(明部與暗部的邊界)與散射像中明確指定的明部頻帶的主面側端部(明部與暗部的邊界)的最短距離。不特別限定求出間隔L的手法。例如，根據眾所周知的圖像處理，重疊反射像與散射像之類的，排列配置反射像與散射像，可以求出兩明部頻帶的間隔L。(Evaluation of the shape of the boundary portion)
As described above, after clearly specifying the bright band in the reflected image (bright field image) and the bright band in the scattered image (dark field image), the interval L between the two bright bands is obtained. The interval L can be obtained as the outer peripheral edge side end portion (the boundary between the bright portion and the dark portion) of the bright band which is clearly specified in the reflected image, and the main surface side end portion of the bright band which is clearly specified in the scattered image (the bright portion) The shortest distance from the boundary of the dark part. The method of obtaining the interval L is not particularly limited. For example, according to the well-known image processing, the reflection image and the scattering image are superimposed on each other, and the reflection image and the scattering image are arranged and arranged, and the interval L between the two bright bands can be obtained.
邊界部的形狀評價，可以根據上述L進行。詳細說來，可以判斷為L值越小邊界部的形狀越陡峭，L值越大邊界部的形狀越平緩。這樣利用L值可以評價邊界部形狀，因為以數值為基礎可以進行客觀評價，根據評價的可靠性觀點來看是理想的。The shape evaluation of the boundary portion can be performed in accordance with the above L. In detail, it can be determined that the smaller the L value is, the steeper the shape of the boundary portion is, and the larger the L value is, the more gentle the shape of the boundary portion is. Thus, the shape of the boundary portion can be evaluated by the L value, because objective evaluation can be performed on the basis of numerical values, and it is desirable from the viewpoint of reliability of evaluation.
如同上述，根據上述評價方法，半導體晶圓的晶圓表面(正面或背面)中，可以評價主面與鄰接此主面的去角面的邊界部形狀。
又，上述評價方法，不必從評價對象的半導體晶圓切出試料片(例如劈開)而可以實施。即，根據上述評價方法，可以是利用非破壞評價。這根據可以簡便評價的觀點來看是理想的。又，這根據同一半導體晶圓在複數不同處中的邊界部形狀評價的容易性觀點來看是理想的。例如根據一形態，上述評價方法，以主面的法線方向為軸旋轉評價對象的半導體晶圓，複數次進行取得反射像以及散射像，可以包含在評價對象的半導體晶圓的複數不同處中求出上述L。分別根據這樣求出的複數L，可以評價各處中的邊界部形狀。又，根據同一半導體晶圓的不同處中的評價求出的複數L值的代表值(例如平均值(例如算術平均)、最小值、最大值等)也可以作為半導體晶圓的邊界部的形狀評價指標。As described above, according to the above evaluation method, in the wafer surface (front surface or back surface) of the semiconductor wafer, the shape of the boundary portion between the main surface and the chamfered surface adjacent to the main surface can be evaluated.
Moreover, the above evaluation method can be carried out without cutting a sample piece (for example, cleaving) from the semiconductor wafer to be evaluated. That is, according to the above evaluation method, it is possible to use non-destructive evaluation. This is ideal from the viewpoint of being easy to evaluate. Moreover, this is desirable from the viewpoint of easiness in evaluation of the shape of the boundary portion of the same semiconductor wafer at a plurality of different places. For example, according to one aspect, in the above-described evaluation method, the semiconductor wafer to be evaluated is rotated about the normal direction of the principal surface, and the reflected image and the scattered image are obtained in plural times, and may be included in a plurality of different points of the semiconductor wafer to be evaluated. Find the above L. Based on the complex number L thus obtained, the shape of the boundary portion in each place can be evaluated. Further, a representative value (for example, an average value (for example, an arithmetic mean), a minimum value, a maximum value, and the like) of the complex L value obtained by evaluation in a different portion of the same semiconductor wafer may be used as the shape of the boundary portion of the semiconductor wafer. Evaluation indicators.
＜半導體晶圓的製造方法＞
根據本發明的一形態的半導體晶圓的製造方法(第一製造方法)，包含：
製造作為製品出貨的候補半導體晶圓；
根據上述評價方法評價上述候補半導體晶圓；以及
將評價結果判定為良品的半導體晶圓提交作為製品半導體晶圓出貨的準備。<Method of Manufacturing Semiconductor Wafer>
A method of manufacturing a semiconductor wafer according to an aspect of the present invention (first manufacturing method) includes:
Manufacturing of candidate semiconductor wafers for product shipments;
The candidate semiconductor wafer is evaluated according to the above evaluation method; and the semiconductor wafer in which the evaluation result is determined to be good is submitted as a preparation for shipment of the product semiconductor wafer.
根據本發明的另一形態的半導體晶圓的製造方法(第二製造方法)，包含：
製造包含複數的半導體晶圓之半導體晶圓批量；
從上述半導體晶圓批量抽出至少1個半導體晶圓；
以上述評價方法評價上述抽出的半導體晶圓；以及
將與上述評價結果判定為良品的半導體晶圓相同的半導體晶圓批量的半導體晶圓提交作為製品半導體晶圓出貨的準備。A method of manufacturing a semiconductor wafer according to another aspect of the present invention (second manufacturing method) includes:
Manufacturing a semiconductor wafer batch containing a plurality of semiconductor wafers;
Extracting at least one semiconductor wafer from the semiconductor wafer in batches;
The semiconductor wafer to be extracted is evaluated by the above-described evaluation method; and the semiconductor wafer of the same semiconductor wafer batch as the semiconductor wafer determined as the good evaluation result is submitted as a preparation for shipment of the product semiconductor wafer.
本發明的另一形態係關於半導體晶圓的製造方法(第三製造方法)，包含：
在測試製造條件下製造評價用半導體晶圓；
以上述評價方法評價上述製造的評價用半導體晶圓；
根據上述評價結果，決定以上述測試製造條件加上變更的製造條件作為實製造條件，或是決定上述測試製造條件作為實製造條件；以及
在上述決定的實製造條件下，製造半導體晶圓。Another aspect of the present invention relates to a method of manufacturing a semiconductor wafer (third manufacturing method), comprising:
Manufacturing a semiconductor wafer for evaluation under test manufacturing conditions;
The semiconductor wafer for evaluation prepared above is evaluated by the above evaluation method;
Based on the above evaluation results, it is determined that the above-described test manufacturing conditions plus the changed manufacturing conditions are actual manufacturing conditions, or the above-described test manufacturing conditions are determined as actual manufacturing conditions, and the semiconductor wafer is manufactured under the above-described actual manufacturing conditions.
第一製造方法，實施根據上述評價方法的評價作為所謂出貨前檢查。又，第二製造方法，將與實行所謂抽樣檢查結果判定為良品的半導體晶圓相同批量的半導體晶圓提交作為製品半導體晶圓出貨的準備。第三製造方法，評價在測試製造條件下製造的半導體晶圓，根據此評價結果決定實製造條件。第一製造方法、第二製造方法以及第三製造方法中，半導體晶圓的評價都根據先前說明的本發明一形態的評價方法實行。The first manufacturing method performs evaluation based on the above evaluation method as a so-called pre-shipment inspection. Further, in the second manufacturing method, the semiconductor wafer of the same batch as the semiconductor wafer in which the so-called sampling inspection result is determined to be good is submitted as a preparation for shipment of the product semiconductor wafer. In the third manufacturing method, the semiconductor wafer manufactured under the test manufacturing conditions was evaluated, and the actual manufacturing conditions were determined based on the evaluation results. In the first manufacturing method, the second manufacturing method, and the third manufacturing method, the evaluation of the semiconductor wafer is performed in accordance with the evaluation method according to the aspect of the invention described above.
(第一製造方法)
第一製造方法中，作為製品出貨的候補半導體晶圓批量的製造，可以與一般的半導體晶圓的製造方法同樣實行。例如，矽晶圓的一形態的拋光晶圓，經由包含從利用柴可拉斯基法（CZ法）等生長的單晶矽鑄錠切斷矽晶圓(Slicing)、去角加工、粗研磨(例如Rubbing)、蝕刻、鏡面研磨(終拋光)、上述加工步驟間或加工步驟後實行的洗淨之製造步驟，可以製造。又，回火晶圓，對於如上述製造的拋光晶圓施行回火處理，可以製造。磊晶晶圓，藉由在如上述製造的拋光晶圓表面上氣相生長(磊晶生長)磊晶層，可以製造。(first manufacturing method)
In the first manufacturing method, the production of a candidate semiconductor wafer as a product shipment can be carried out in the same manner as a general method of manufacturing a semiconductor wafer. For example, a polished wafer of one form of a germanium wafer is subjected to slicing, chamfering, rough grinding by including a single crystal germanium ingot grown by a Chalcola method (CZ method) or the like. The manufacturing steps of (for example, Rubbing), etching, mirror polishing (final polishing), and washing performed between the above processing steps or after the processing steps can be produced. Further, the tempered wafer can be manufactured by subjecting the polished wafer manufactured as described above to tempering. The epitaxial wafer can be fabricated by vapor-phase growth (epitaxial growth) of the epitaxial layer on the surface of the polished wafer fabricated as described above.
製造的半導體晶圓，根據本發明的一形態的評價方法，評價主面與鄰接此主面的去角面的邊界部形狀。評價方法的細節，與之前記載相同。於是將評價結果判定為良品的半導體晶圓提交作為製品半導體晶圓出貨的準備。用以判定為良品的基準，只要根據製品半導體晶圓要求的品質決定即可。例如，一形態中，可以以求出的L值在某值以上(即臨界值以上)，作為用以判定為良品的基準。又，作為良品判定使用的L值，也可以使用同一半導體晶圓的不同處中根據評價求出的複數的L值的代表值(例如平均值(例如算術平均)、最小值、最大值等)。這點，關於第二製造方法以及第三製造方法也相同。作為輸出作為製品半導體晶圓的準備，例如可以舉出包裝等。這樣根據第一製造方法，可以穩定供給市場主面與去角面的邊界部形狀是製品半導體晶圓要求的形狀的半導體晶圓。In the manufactured semiconductor wafer, according to the evaluation method of one aspect of the present invention, the shape of the boundary portion between the main surface and the chamfered surface adjacent to the main surface is evaluated. The details of the evaluation method are the same as those described previously. Then, the semiconductor wafer submitted as the good result of the evaluation result is submitted as a preparation for shipment of the product semiconductor wafer. The basis for determining the good product may be determined according to the quality required for the semiconductor wafer of the product. For example, in one aspect, the obtained L value may be equal to or greater than a certain value (that is, a critical value or more) as a criterion for determining a good product. Further, as the L value used for the good product determination, a representative value (for example, an average value (for example, arithmetic mean), a minimum value, a maximum value, etc.) of the complex L value obtained by the evaluation in the difference of the same semiconductor wafer may be used. . This is also the same regarding the second manufacturing method and the third manufacturing method. As an output for preparation as a product semiconductor wafer, for example, a package or the like can be cited. Thus, according to the first manufacturing method, it is possible to stably supply the semiconductor wafer in which the boundary portion shape of the market main surface and the chamfer surface is a shape required for the product semiconductor wafer.
(第二製造方法)
第二製造方法中的半導體晶圓批量的製造，例如也如同關於先前第一製造方法記載，可以同樣進行一般的半導體晶圓的製造方法。不特別限定半導體晶圓批量內包含的半導體晶圓總數。從製造的半導體晶圓批量抽出，即提交抽樣檢查的半導體晶圓數量至少1個，2個也可以，不特別限定其數量。(second manufacturing method)
In the manufacturing of the semiconductor wafer in the second manufacturing method, for example, as described in the first first manufacturing method, a general semiconductor wafer manufacturing method can be similarly performed. The total number of semiconductor wafers contained in the semiconductor wafer batch is not particularly limited. The number of semiconductor wafers submitted for sampling inspection is batched from the manufactured semiconductor wafer, and the number of semiconductor wafers submitted for sampling inspection is at least one, and two may be used, and the number thereof is not particularly limited.
從半導體晶圓批量抽出的半導體晶圓，根據本發明的一形態的評價方法，評價主面與鄰接主面的去角面的邊界部形狀。評價方法的細節，與先前記載相同。於是將與評價結果判定為良品的半導體晶圓相同的半導體晶圓批量的半導體晶圓提交作為製品半導體晶圓出貨的準備。用以判定為良品的基準，只要根據製品半導體晶圓要求的品質決定即可。例如，一形態中，可以以求出的L值在某值以上(即臨界值以上)，作為用以判定為良品的基準。關於作為製品半導體晶圓出貨的準備，例如與先前關於第一製造方法的記載相同。根據第二製造方法，可以穩定供給市場主面與去角面的邊界部形狀是製品半導體晶圓要求的形狀的半導體晶圓。又，因為本發明的一形態的評價方法可以是利用非破壞的評價，第二製造方法的一形態中，從半導體晶圓批量抽出提交評價的半導體晶圓也是評價結果被判定為良品的話，提交作為製品半導體晶圓出貨的準備，準備後可以作為製品半導體晶圓出貨。The semiconductor wafer drawn from the semiconductor wafer in batches is evaluated for the shape of the boundary portion between the main surface and the chamfered surface of the adjacent main surface according to an evaluation method of one aspect of the present invention. The details of the evaluation method are the same as those described previously. Then, the semiconductor wafer of the same semiconductor wafer batch as the semiconductor wafer whose evaluation result is determined to be good is submitted as a preparation for shipment of the product semiconductor wafer. The basis for determining the good product may be determined according to the quality required for the semiconductor wafer of the product. For example, in one aspect, the obtained L value may be equal to or greater than a certain value (that is, a critical value or more) as a criterion for determining a good product. The preparation for shipment as a product semiconductor wafer is, for example, the same as the description about the first manufacturing method. According to the second manufacturing method, it is possible to stably supply the semiconductor wafer whose shape of the boundary surface of the market main surface and the chamfer surface is a shape required for the product semiconductor wafer. Furthermore, the evaluation method according to one aspect of the present invention may be a non-destructive evaluation. In one aspect of the second manufacturing method, when the semiconductor wafer to which the evaluation is submitted is extracted from the semiconductor wafer in batches, and the evaluation result is judged to be good, the file is submitted. As a preparation for the shipment of the product semiconductor wafer, it can be shipped as a product semiconductor wafer after preparation.
(第三製造方法)
關於第三製造方法，作為測試製造條件以及實製造條件，可以舉出用以製造半導體晶圓的各種步驟中的各種條件。關於用以製造半導體晶圓的各種步驟，與關於先前第一製造方法的記載相同。又，所謂「實製造條件」，意味製品半導體晶圓的製造條件。(third manufacturing method)
Regarding the third manufacturing method, various conditions in various steps for manufacturing a semiconductor wafer can be cited as test manufacturing conditions and actual manufacturing conditions. The various steps for fabricating a semiconductor wafer are the same as those described in relation to the previous first manufacturing method. Moreover, the "real manufacturing conditions" mean the manufacturing conditions of the product semiconductor wafer.
第三製造方法中，作為用以決定實製造條件的前階段，設定測試製造條件，在此測試製造條件下製造評價用半導體晶圓。製造的半導體晶圓，根據本發明的一形態的評價方法，評價主面與鄰接此主面的去角面的邊界部形狀。評價方法的細節，與先前記載相同。評價用半導體晶圓，至少1個，2個以上也可以，不特別限定其數量。評價的結果，評價用半導體晶圓的邊界部形狀是製品半導體晶圓要求的形狀的話，藉由此測試製造條件作為實製造條件製造製品半導體晶圓出貨，可以穩定供給市場邊界部的形狀是所希望的形狀的製品半導體晶圓。另一方面，評價結果，評價用半導體晶圓的邊界部形狀與製品半導體晶圓要求的形狀不同時，決定測試製造條件加上變更的製造條件作為實製造條件。加上變更的製造條件，最好考慮不影響邊界部形狀的製造條件。作為如此的製造條件的一例，可以舉出半導體晶圓的表面(正面以及/或背面)的研磨條件。作為如此研磨條件的具體例，可以舉出粗研磨條件以及鏡面研磨條件，更詳細說來，可以舉出研磨液的種類、研磨液的研磨粒濃度、研磨墊的種類(例如硬度等)。又，作為製造條件的一例，也可以舉出去角加工條件，詳細說來，可以舉出去角加工中的研削、研磨等的機械加工條件，更詳細說來，可以舉出去角加工使用的研磨帶種類等。這樣決定以測試製造條件加上變更的製造條件作為實製造條件，藉由在此實製造條件下製造半導體晶圓出貨，可以穩定供給市場邊界部形狀是所希望的形狀的製品半導體晶圓。又，在測試製造條件加上變更的製造條件下重新製造評價用半導體晶圓，根據本發明的一形態的評價方法評價此評價用半導體晶圓，重複1次或2次判定以此製造條件作為實製造條件或再加上變更也可以。
以上的第三製造方法中，關於評價用半導體晶圓的邊界部形狀是否是製品半導體晶圓要求的形狀的判定方法，可以先參照關於第一製造方法以及第二製造方法的良品判定的記載。In the third manufacturing method, as a pre-stage for determining actual manufacturing conditions, test manufacturing conditions are set, and a semiconductor wafer for evaluation is manufactured under the test manufacturing conditions. In the manufactured semiconductor wafer, according to the evaluation method of one aspect of the present invention, the shape of the boundary portion between the main surface and the chamfered surface adjacent to the main surface is evaluated. The details of the evaluation method are the same as those described previously. At least one or two or more semiconductor wafers for evaluation may be used, and the number thereof is not particularly limited. As a result of the evaluation, if the shape of the boundary portion of the semiconductor wafer for evaluation is the shape required for the product semiconductor wafer, the semiconductor wafer can be manufactured by the test manufacturing conditions as a real manufacturing condition, and the shape of the boundary portion of the market can be stably supplied. A product semiconductor wafer of a desired shape. On the other hand, when the evaluation result is different from the shape required for the semiconductor wafer of the semiconductor wafer for evaluation, the test manufacturing conditions and the changed manufacturing conditions are determined as actual manufacturing conditions. In addition to the changed manufacturing conditions, it is preferable to consider manufacturing conditions that do not affect the shape of the boundary portion. As an example of such a manufacturing condition, the polishing conditions of the surface (front surface and/or back surface) of a semiconductor wafer are mentioned. Specific examples of the polishing conditions include rough polishing conditions and mirror polishing conditions. More specifically, the types of the polishing liquid, the polishing particle concentration of the polishing liquid, and the type of the polishing pad (for example, hardness) may be mentioned. In addition, as an example of the production conditions, the angular processing conditions may be mentioned, and in detail, the machining conditions such as grinding and polishing in the corner machining may be mentioned, and more specifically, the polishing tape used for the corner machining may be mentioned. Types, etc. In this way, it is determined that the test manufacturing conditions and the changed manufacturing conditions are used as actual manufacturing conditions, and by manufacturing the semiconductor wafer under the actual manufacturing conditions, it is possible to stably supply the product semiconductor wafer having the desired shape of the market boundary portion. Moreover, the semiconductor wafer for evaluation is remanufactured under the test manufacturing conditions and the changed manufacturing conditions, and the semiconductor wafer for evaluation is evaluated according to the evaluation method of one embodiment of the present invention, and the manufacturing conditions are determined one or two times. Actual manufacturing conditions or changes can be added.
In the third manufacturing method described above, whether the shape of the boundary portion of the semiconductor wafer for evaluation is a shape required for the product semiconductor wafer can be referred to the description of the good quality determination of the first manufacturing method and the second manufacturing method.
關於第一製造方法、第二製造方法以及第三製造方法的其他細節，可以應用關於半導體晶圓的製造方法之眾所周知的技術。
[實施例]Regarding other details of the first manufacturing method, the second manufacturing method, and the third manufacturing method, well-known techniques regarding a method of manufacturing a semiconductor wafer can be applied.
[Examples]
以下，根據實施例再說明本發明。但是，不限定本發明為實施例所示的形態。Hereinafter, the present invention will be further described based on examples. However, the invention is not limited to the embodiment shown in the examples.
1.裝置的說明
以下，反射像(明視野像)的取得以及散射像(暗視野像)的取得，關於評價對象的半導體晶圓的正面側，利用Rudolph Technologies(Rudolph技術)公司製作的自動外觀機(AWX EB1300N)進行。此自動外觀機卡緊(chucking)保持晶圓端面部，係以主面法線方向為軸可旋轉的裝置。第1圖中顯示用以取得反射像的光照射系以及受光系的概略構成圖。第2圖中顯示用以取得散射像的光照射系以及受光系的概略構成圖。第1、2圖中，箭頭係模式顯示光的進行方向。
如第1圖所示，用以取得反射像的光照射系，包含光源11以及鏡子12。藉由以鏡子12改變從光源11射出的光的進行方向，從應評價形狀的邊界部的鉛直方向上方(0)進行光照射。藉由以鏡子13改變來自這樣照射光的半導體晶圓之反射光的光進行方向，引導反射光至受光部14。光源11，係可見光區域中具有發光波長的同軸(coaxial)LED。另一方面，用以取得散射像的光照射系，包含光源21。光源21，包含同一圓周上等間隔配置的16個在可見光區域中具有發光波長的LED，構成為分別從16個LED發出的光照射同一處。利用此光源21，至少從比應評價形狀的邊境部的鉛直方向上方更外側，(詳細說來，至少從外側2040)進行光照射。藉由以鏡子23改變來自這樣照射光的半導體晶圓的散射光的進行方向，引導散射光至受光部24。受光部，例如可以是線掃描攝影機。以下，使用上述自動外觀機內備置的線掃描攝影機作為受光部14、24。1. Description of the device The following is an acquisition of a reflection image (bright-field image) and acquisition of a scattering image (dark-field image), and an automatic appearance made by Rudolph Technologies (Rudolph Technologies) on the front side of the semiconductor wafer to be evaluated. The machine (AWX EB1300N) is carried out. The automatic appearance machine chucks to hold the wafer end face, and is a device that is rotatable about the normal direction of the main surface. Fig. 1 is a schematic view showing a configuration of a light irradiation system and a light receiving system for obtaining a reflection image. Fig. 2 is a view showing a schematic configuration of a light irradiation system and a light receiving system for obtaining a scattering image. In the first and second figures, the arrow mode indicates the direction in which the light travels.
As shown in Fig. 1, a light irradiation system for obtaining a reflection image includes a light source 11 and a mirror 12. Light is irradiated from the upper side (0) in the vertical direction of the boundary portion of the shape to be evaluated by changing the direction in which the light emitted from the light source 11 is directed by the mirror 12. The reflected light is guided to the light receiving portion 14 by changing the direction of the light from the reflected light of the semiconductor wafer thus irradiated with the mirror 13 . The light source 11 is a coaxial LED having an emission wavelength in a visible light region. On the other hand, the light irradiation system for obtaining the scattered image includes the light source 21. The light source 21 includes 16 LEDs having emission wavelengths in the visible light region arranged at equal intervals on the same circumference, and is configured to illuminate the same light from the respective 16 LEDs. With this light source 21, light is irradiated at least from the upper side in the vertical direction of the border portion to be evaluated, and (in detail, at least from the outer side 2040). The scattered light is guided to the light receiving portion 24 by changing the direction in which the scattered light from the semiconductor wafer thus irradiated with light is changed by the mirror 23. The light receiving unit may be, for example, a line scan camera. Hereinafter, a line scan camera provided in the above-described automatic appearance machine is used as the light receiving units 14 and 24.
2.評價方法的說明
第3圖顯示關於對晶圓外周緣部施行去角加工的同一半導體晶圓的同一處，排列以上述裝置得到的反射像與散射像的一例。第3圖中，圖像(a)是反射像，圖像(b)是散射像。散射像的明部頻帶，以明亮度(Brightness)的臨界值為0(零)，明確指定為明亮度0以上的區域。第3圖中，反射像(明視野像)的明部分區域與散射像(暗視野像)的明部區域的間隔(第3(b)圖上的虛線與一點虛線之間的最短距離)是L。2. Description of Evaluation Method FIG. 3 shows an example of arranging a reflection image and a scattering image obtained by the above-described apparatus at the same place of the same semiconductor wafer to which the outer peripheral edge portion of the wafer is subjected to the chamfering process. In Fig. 3, image (a) is a reflection image, and image (b) is a scattering image. The bright band of the scattered image is clearly designated as a region having a brightness of 0 or more with a critical value of brightness of 0 (zero). In Fig. 3, the interval between the bright portion of the reflection image (bright field image) and the bright region of the scattering image (dark field image) (the shortest distance between the dotted line on the 3rd (b) and the dotted line) is L.
3.用以取得參照值的評價方法的說明
本發明的一形態的評價方法中得到的L能夠成為邊境部形狀指標的值，例如，根據以下的方法取得的參照值與根據本發明一形態的評價方法得到的L，由於顯示良好的相關性，可以確認。
首先關於半導體晶圓，得到包含應評價的邊界部的剖面像。剖面像，例如，藉由用顯微鏡拍攝半導體晶圓在劈開面應劈開露出的剖面，可以取得。
作成將取得的剖面像只往晶圓厚度方向放大的放大像。由於只往晶圓厚度方向放大，剖面形狀的輪廓中，因為可以對主面(所謂水平面)強調邊界部的形狀，藉由使用放大像，利用未放大的剖面像也可以高精度評價邊界部的平緩/陡峭。再藉由二值化處理放大像，因為可以更鮮明顯示剖面形狀的輪廓，可以更高精度評價邊界部的平緩/陡峭。
這樣得到的二值化處理完成像中，晶圓剖面形狀的輪廓中，通常主面與去角面的邊界部形狀成為曲線形狀。於是，此輪廓上，使主面與去角面的邊界部曲線形狀，配合具有近似此曲線形狀或一致的圓弧形狀的圓。這樣得到的圓(曲率圓)的尺寸，例如直徑或半徑越大，可以判斷為邊界部形狀越平緩，上述圓的尺寸越小，可以判斷為邊界部形狀越陡峭。作為例示，第6圖中，顯示關於不同的二種類的半導體晶圓，根據上述方法得到的二值化處理完成像(只往晶圓厚度方向放大10倍後二值化處理得到的像)。第6圖中也顯示具有與邊界部的曲線形狀大略一致的圓弧的圓。圓之中顯示的數值，係圓的直徑。第6圖中，對比樣品1與樣品2的剖面形狀時，樣品2的邊界部形狀比樣品1的邊界部形狀平緩。關於圓的尺寸對比樣品1與樣品2時，關於樣品2得到的圓的直徑比關於樣品1得到的圓的直徑大，與上述相同，圓的尺寸與邊界部的形狀相關。3. Description of the evaluation method for obtaining the reference value The L obtained in the evaluation method according to the aspect of the present invention can be a value of the boundary portion shape index, for example, a reference value obtained by the following method and an aspect according to the present invention. The L obtained by the evaluation method can be confirmed by showing a good correlation.
First, regarding the semiconductor wafer, a cross-sectional image including a boundary portion to be evaluated is obtained. The cross-sectional image can be obtained, for example, by photographing a semiconductor wafer with a microscope and exposing the exposed cross section on the cleavage surface.
The obtained cross-sectional image is an enlarged image that is enlarged only in the thickness direction of the wafer. Since it is enlarged only in the thickness direction of the wafer, in the outline of the cross-sectional shape, since the shape of the boundary portion can be emphasized on the main surface (the so-called horizontal plane), the boundary portion can be evaluated with high precision by using the enlarged image by using the enlarged image. Gentle / steep. Further, by enlarging and magnifying the image, since the outline of the cross-sectional shape can be more clearly displayed, the smoothness/steepness of the boundary portion can be evaluated with higher precision.
In the binarization processing image thus obtained, in the outline of the cross-sectional shape of the wafer, the shape of the boundary portion between the main surface and the chamfered surface is generally curved. Then, on this contour, the boundary shape of the boundary portion between the main surface and the chamfered surface is matched with a circle having an arc shape that approximates the curved shape or the uniform arc shape. The size of the circle (curvature circle) thus obtained, for example, the larger the diameter or the radius, can be determined that the shape of the boundary portion is gentler, and the smaller the size of the circle, the steeper the shape of the boundary portion can be determined. As an example, in the sixth drawing, the binarization processing image obtained by the above method (the image obtained by binarizing only 10 times in the thickness direction of the wafer) is displayed. Also shown in Fig. 6 is a circle having an arc that substantially coincides with the curved shape of the boundary portion. The value shown in the circle is the diameter of the circle. In Fig. 6, when the cross-sectional shape of the sample 1 and the sample 2 was compared, the shape of the boundary portion of the sample 2 was gentler than the shape of the boundary portion of the sample 1. Regarding the size of the circle, when the sample 1 and the sample 2 were compared, the diameter of the circle obtained with respect to the sample 2 was larger than the diameter of the circle obtained with respect to the sample 1, and the size of the circle was related to the shape of the boundary portion as described above.
4.半導體晶圓的評價
(1) 間隔L的測量
準備晶圓表面的研磨條件以及去角加工條件不同的四種類的半導體晶圓(直徑300mm(毫米)的表面是(100)面的單晶矽晶圓(拋光晶圓))。以下，上述四種類的半導體晶圓，分別稱作「晶圓1」、「晶圓2」、「晶圓3」、「晶圓4」。以這些半導體晶圓的槽口部為0451記載的裝置取得反射像以及散射像，如上述2說明排列得到的反射像以及散射像，求出反射像的明部頻帶與散射像的明部頻帶的間隔L。4. Evaluation of semiconductor wafers
(1) Measurement of interval L Preparation of wafer surface polishing conditions and four types of semiconductor wafers with different chamfering processing conditions (300 mm diameter (mm) surface is a (100) plane single crystal germanium wafer (polishing wafer) )). Hereinafter, the above four types of semiconductor wafers are referred to as "wafer 1", "wafer 2", "wafer 3", and "wafer 4", respectively. The reflected image and the scattered image are obtained by the device described in the slot portion of the semiconductor wafer of 0451, and the reflected image and the scattered image obtained by the arrangement are described in the above 2, and the bright band of the reflected image and the bright band of the scattered image are obtained. Interval L.
(2)參照值的取得
分別在(110)面劈開上述(1)評價的四種類的半導體晶圓，製作剖面觀察用試料。
將製作的剖面觀察用試料，利用微分干涉顯微鏡，調整明亮度、對比，取得包含上述3評價的邊界部之剖面像(拍攝倍率：500倍)。
將取得的剖面像取入圖像處理軟體(Adobe公司製軟體名Photoshop CS5)，只往晶圓厚度方向放大10倍後，進行二值化處理。
取入實行上述二值化處理得到的二值化處理完成像至軟體(Microsoft公司製Powerpoint)，使用相同軟體的圖形描繪工具，剖面形狀的輪廓上，描繪邊界部的曲線形狀與圓弧形狀大略一致的圓。曲線形狀與圓弧形狀大略一致，係以目視判斷。關於各半導體晶圓，以這樣描繪的圓的直徑為參照值。第7圖中，顯示以上述方法得到的二值化處理完成像(只往晶圓厚度方向放大10倍後，二值化處理得到的像)。第7圖中也顯示具有與邊境部的曲線形狀大略一致的圓弧的圓。(2) Acquisition of Reference Values Four kinds of semiconductor wafers evaluated in the above (1) were opened on the (110) plane, and a sample for cross-section observation was prepared.
The prepared cross-section observation sample was adjusted for brightness and contrast by a differential interference microscope, and a cross-sectional image (photographing magnification: 500 times) including the boundary portion of the above-mentioned three evaluations was obtained.
The obtained cross-sectional image is taken into an image processing software (software name Photoshop CS5 manufactured by Adobe Co., Ltd.), and is magnified 10 times in the thickness direction of the wafer, and then binarized.
The binarization processing image obtained by performing the binarization processing described above is completed to a software (Powerpoint manufactured by Microsoft Corporation), and a graphic drawing tool of the same software is used, and the contour shape of the boundary portion and the arc shape are roughly drawn on the outline of the cross-sectional shape. A consistent circle. The shape of the curve is roughly the same as the shape of the arc, which is judged visually. Regarding each semiconductor wafer, the diameter of the circle thus drawn is referred to as a reference value. In Fig. 7, the binarization completed image obtained by the above method (image obtained by binarization only after magnifying 10 times in the thickness direction of the wafer) is displayed. Also shown in Fig. 7 is a circle having an arc that substantially coincides with the curved shape of the border portion.
(3)評價結果
關於各半導體晶圓，在表1顯示上述(1)求出的L以及上述(2)求出的參照值(圓的尺寸(直徑))。又，關於各半導體晶圓，在第4圖中顯示描繪上述(1)中得到的L值對於上述(2)中得到的參照值(圓的直徑)的圖表。(3) Evaluation results For each semiconductor wafer, the L obtained in the above (1) and the reference value (the size (diameter) of the circle) obtained in the above (2) are shown in Table 1. Further, in each of the semiconductor wafers, a graph in which the L value obtained in the above (1) is referred to the reference value (diameter of a circle) obtained in the above (2) is shown in FIG. 4 .
[表1]
第4圖中，也顯示關於4個繪圖根據最小平方法求出的近似直線。近似曲線，係相關係數的平方R2
＝0.98，顯示極良好的相關性。根據此結果，顯示上述(1)得到的L值能成為邊界部的形狀評價的指標。
這樣得到的L值，如先前記載可以用於出貨前檢查，可以用於從批量抽樣檢查，也可以用於半導體晶圓的實製造條件的決定。In Fig. 4, the approximate straight line obtained by the least squares method for the four plots is also displayed. The approximation curve, which is the square of the correlation coefficient R 2 =0.98, shows a very good correlation. According to this result, the L value obtained in the above (1) can be displayed as an index of the shape evaluation of the boundary portion.
The L value thus obtained can be used for pre-shipment inspection as previously described, and can be used for batch sampling inspection or for determination of actual manufacturing conditions of semiconductor wafers.
5.同一半導體晶圓的複數處的評價
準備二種類對晶圓外周緣部施行去角加工的半導體晶圓(直徑300mm的表面是(100)面的單晶矽晶圓(拋光晶圓))。以下，上述二種類的半導體晶圓分別稱作「晶圓A」、「晶圓B」。這些半導體晶圓的槽口為01記載的裝置取得反射像以及散射像。第5圖顯示各處得到的散射像上，追加相當於同一處得到的反射像中明確指定的明部區域的邊境之虛線的圖像。散射像中設定明亮度(Brightness)的臨界值，晶圓A、晶圓B的各處取得的散射像上，分別明確指定明亮度在臨界值以上(例如明亮度0)的區域為明部頻帶。求出各處取得的散射像上明確指定的明部頻帶端部與虛線(即反射像中明確指定的明部頻帶端部)的最短距離作為間隔L。藉由以關於各處這樣求出的L作為指標，可以評價各處的邊界部形狀。晶圓B的各處中的間隔L值，比晶圓B的各處中的間隔L值大。根據此結果，可以判定晶圓B的各處中的邊界部形狀比晶圓A平緩。
上述反射像以及散射像的取得，在上述1記載的裝置中，藉由夾緊保持晶圓端面部以主面法線方向為軸旋轉，向應取得反射像以及散射像之處照射光，調整後實行。
[產業上的利用可能性]5. Evaluation of the plurality of semiconductor wafers Two types of semiconductor wafers (300 mm diameter surface is a (100) plane single crystal germanium wafer (polished wafer)) on the outer peripheral edge of the wafer are prepared. . Hereinafter, the above two types of semiconductor wafers are referred to as "wafer A" and "wafer B", respectively. The device described in 01 in the notch of these semiconductor wafers acquires a reflected image and a scattered image. Fig. 5 is a view showing an image of a broken line at the border of the bright region specified in the reflected image obtained at the same position on the scattered image obtained in each place. The critical value of the brightness is set in the scattering image, and the area of the scattering image obtained in each of the wafer A and the wafer B is clearly specified as the bright band in the region where the brightness is equal to or greater than the critical value (for example, brightness 0). . The shortest distance between the end of the bright band which is clearly specified in the scattered image obtained in each place and the broken line (that is, the end of the bright band which is clearly specified in the reflected image) is obtained as the interval L. The shape of the boundary portion of each place can be evaluated by using L obtained as described above as an index. The interval L value in each of the wafers B is larger than the interval L value in each of the wafers B. From this result, it can be determined that the shape of the boundary portion in each of the wafers B is gentler than that of the wafer A.
In the apparatus described in the above 1, the image of the above-described reflection image is rotated by the clamping and holding end surface of the wafer in the normal direction of the main surface, and the light is irradiated to the reflected image and the scattered image. After the implementation.
[Industry use possibility]
本發明，在矽晶圓等各種半導體晶圓的製造分野中有用。The present invention is useful in the manufacturing field of various semiconductor wafers such as germanium wafers.
11‧‧‧光源11‧‧‧Light source
12‧‧‧鏡子 12‧‧‧Mirror
13‧‧‧鏡子 13‧‧‧Mirror
14‧‧‧受光部 14‧‧‧Receiving Department
21‧‧‧光源 21‧‧‧Light source
23‧‧‧鏡子 23‧‧‧Mirror
24‧‧‧受光部 24‧‧‧Receiving Department
[第1圖]係顯示實施例中為了取得反射像使用的光照射系以及受光系的概略構成圖；[Fig. 1] is a schematic view showing a configuration of a light irradiation system and a light receiving system used for obtaining a reflection image in the embodiment;
[第2圖]係顯示實施例中為了取得散射像使用的光照射系以及受光系的概略構成圖； [Fig. 2] is a schematic view showing a configuration of a light irradiation system and a light receiving system used to obtain a scattering image in the embodiment;
[第3圖]係顯示關於對晶圓外周緣部施行去角加工的同一半導體晶圓的同一處排列得到的反射像與散射像的一例； [Fig. 3] shows an example of a reflection image and a scattering image obtained by arranging the same semiconductor wafer to which the outer peripheral edge portion of the wafer is subjected to the chamfering process;
[第4圖]係顯示對參照值描繪實施例中得到的L值之圖表； [Fig. 4] is a graph showing the L value obtained in the embodiment for the reference value;
[第5圖]係顯示實施例中二種類的半導體晶圓分別在複數處得到的評價結果； [Fig. 5] shows the evaluation results obtained in the plural numbers of the semiconductor wafers of the two types in the embodiment;
[第6圖]係顯示用以得到參照值的評價方法產生的評價結果的一例；以及 [Fig. 6] is an example of an evaluation result generated by an evaluation method for obtaining a reference value;
[第7圖]係關於實施例中評價的半導體晶圓，顯示根據用以得到參照值的評價方法得到的評價結果。 [Fig. 7] The evaluation results obtained by the evaluation method for obtaining the reference value are shown for the semiconductor wafer evaluated in the examples.
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