TW201932984A - Photosensitive resin laminate and method for producing resist pattern especially performing exposure after peeling of the support film and reducing the defect rate - Google Patents

Photosensitive resin laminate and method for producing resist pattern especially performing exposure after peeling of the support film and reducing the defect rate Download PDF

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TW201932984A
TW201932984A TW108102659A TW108102659A TW201932984A TW 201932984 A TW201932984 A TW 201932984A TW 108102659 A TW108102659 A TW 108102659A TW 108102659 A TW108102659 A TW 108102659A TW 201932984 A TW201932984 A TW 201932984A
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photosensitive resin
exposure
support film
compound
resin composition
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TW108102659A
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TWI690774B (en
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吉田真典
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日商旭化成股份有限公司
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/0275Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with dithiol or polysulfide compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

The present invention provides a photosensitive resin laminate which can obtain a circuit board having a small number of defective products even when it is produced by exposure after peeling off of the support film. The present invention is a photosensitive resin laminate for use in exposure after peeling off of a support film, which is provided with the support film and a photosensitive resin composition layer containing a photosensitive resin composition arranged on the support film. The photosensitive resin composition contains (A) an alkali-soluble polymer, (B) a compound reactive with a photoinitiator, and (C) a photoinitiator, which are respectively exposed according to (1) the state where the focus position is aligned with a surface of the support film using the exposure device, and the photosensitive resin composition layer is peeled off from the support film after exposure, and (2) peels off the support film, and then performs exposure in the state where the focus position is aligned with a surface of the original support film by using the exposure device, and the difference of the minimum independent thin-wire widths that can be patterned between the first and second resist patterns obtained by exposure by a specific exposure device is 5 μm or less.

Description

感光性樹脂積層體及抗蝕劑圖案之製造方法Photosensitive resin laminated body and manufacturing method of resist pattern

本發明係關於一種感光性樹脂積層體及抗蝕劑圖案之製造方法。The present invention relates to a method for manufacturing a photosensitive resin laminate and a resist pattern.

於電路基板之製造、金屬之精密加工等領域中,已知有如下之方法:於基板上形成特定之抗蝕劑圖案之後實施蝕刻、鍍覆等,藉此進行所需之電路形成或金屬加工。
此時,為了於基板上形成抗蝕劑圖案,廣泛使用於支持膜上具有感光性樹脂組合物層之感光性樹脂積層體。該感光性樹脂積層體多於在感光性樹脂組合物層上層壓有覆蓋膜之狀態下進行供給。
In the fields of circuit board manufacturing, metal precision processing, and the like, the following methods are known: forming a specific resist pattern on a substrate, and then performing etching, plating, etc., to perform the required circuit formation or metal processing .
At this time, in order to form a resist pattern on a substrate, a photosensitive resin laminate having a photosensitive resin composition layer on a support film is widely used. This photosensitive resin laminated body is supplied more than the state where the cover film was laminated | stacked on the photosensitive resin composition layer.

電路基板例如藉由以下之方法進行製造。
將感光性樹脂積層體之覆蓋膜剝離,以感光性樹脂組合物層與積層有壓延銅箔之銅箔積層板相接之方式層壓感光性樹脂積層體。其次,將感光性樹脂積層體之感光性樹脂組合物層曝光為圖案狀之後,將未硬化部(負型為未曝光部,正型為曝光部)顯像除去而形成抗蝕劑圖案。繼而,使用蝕刻等適當之方法進行銅箔之圖案化,藉此可獲得電路基板。
The circuit board is manufactured by the following method, for example.
The cover film of the photosensitive resin laminated body is peeled off, and the photosensitive resin laminated body is laminated so that the photosensitive resin composition layer and the copper foil laminated board laminated with a rolled copper foil are in contact with each other. Next, after exposing the photosensitive resin composition layer of the photosensitive resin laminate to a pattern, uncured portions (negative-type unexposed portions and positive-type exposed portions) are developed and removed to form a resist pattern. Then, the copper foil is patterned by an appropriate method such as etching, thereby obtaining a circuit board.

感光性樹脂組合物層之曝光通常隔著支持膜而進行。此時,若感光性樹脂積層體之支持膜含有異物,則由於異物而造成於曝光時被遮光,欲曝光之部分未曝光,其結果,存在銅箔之圖案化、即配線圖案中產生缺陷之情形。The exposure of the photosensitive resin composition layer is usually performed via a support film. At this time, if the support film of the photosensitive resin laminate contains foreign matter, it is blocked during exposure due to the foreign matter, and the part to be exposed is not exposed. As a result, there is a patterning of the copper foil, that is, a defect in the wiring pattern. situation.

於專利文獻1中記載了如下之技術:為了抑制由支持膜之異物所引起之配線圖案之缺陷,對支持膜中所含之直徑為5 μm以上之粒子及凝聚物之量進行限定。
[先前技術文獻]
[專利文獻]
Patent Document 1 describes a technique for limiting the amount of particles and aggregates having a diameter of 5 μm or more contained in the support film in order to suppress defects in the wiring pattern caused by foreign matter in the support film.
[Prior technical literature]
[Patent Literature]

[專利文獻1]國際公開第2008/093643號[Patent Document 1] International Publication No. 2008/093643

[發明所欲解決之問題][Problems to be solved by the invention]

作為避免由支持膜中所含之異物引起之解像度之降低之其他方法,考慮於基板上層壓感光性樹脂積層體之後,將支持膜剝離後進行曝光之方法。於本說明書中將剝離支持膜後進行曝光稱作“支持膜剝離後曝光”。但是,藉由支持膜剝離後曝光而製作之電路基板存在不良品較多之問題。As another method for avoiding a decrease in resolution caused by a foreign substance contained in the support film, a method of exposing the support film after peeling the support film after laminating a photosensitive resin laminate on a substrate is considered. In this specification, exposure after peeling a support film is called "exposure after peeling of a support film." However, the circuit board produced by exposing the support film after peeling has a problem that there are many defective products.

因此,本發明之目的在於提供即便於藉由支持膜剝離後曝光而進行製作之情形時亦可獲得不良品較少之電路基板的感光性樹脂積層體。
[解決問題之技術手段]
Therefore, an object of the present invention is to provide a photosensitive resin laminated body that can obtain a circuit board with fewer defective products even in a case where it is produced by exposing the support film after exposure.
[Technical means to solve the problem]

本發明者進行了銳意研究,結果發現:作為藉由支持膜剝離後曝光而製作之電路基板中不良品較多之原因,先前之感光性樹脂積層體於未剝離支持膜之情形與剝離支持膜之情形時,於相同條件下曝光、顯像之情形時,抗蝕劑圖案之形狀產生較大差異。並且本發明者發現藉由降低該差異,可降低於在支持膜剝離後曝光之情形與未剝離支持膜而曝光之情形時之可形成於電路基板之最小線寬之差,藉此可減少不良品。The inventors conducted intensive research and found that as a reason for the high number of defective products in circuit substrates produced by exposing the support film after peeling, the conventional photosensitive resin laminate was not peeled from the support film and the support film was peeled off. In the case of exposure and development under the same conditions, the shape of the resist pattern is greatly different. Furthermore, the inventors have found that by reducing the difference, the difference between the minimum line width that can be formed on the circuit substrate when the support film is peeled off and when the support film is not peeled off can be reduced, thereby reducing the Good quality.

亦即,本發明如下所示。
[1]一種支持膜剝離後曝光用之感光性樹脂積層體,其係具備支持膜及 感光性樹脂組合物層者,上述感光性樹脂組合物層配置於上述支持膜上,且包含感光性樹脂組合物; 上述感光性樹脂組合物含有:(A)鹼溶性高分子;(B)與光起始劑具有反應性之化合物及(C)光起始劑; 使用#400之研削材對積層有35 μm壓延銅箔之0.4 mm厚之銅箔積層板進行噴射刮擦研磨,其後預熱至60℃,藉由熱輥貼合機,於輥溫度105℃、氣壓0.35 MPa、層壓速度1.5 m/min之條件下將上述感光性樹脂積層體層壓於上述銅箔積層板,其次依照下述條件(1)及(2)之任一者進行曝光: (1)使用曝光裝置於將焦點位置對準支持膜表面之狀態下進行曝光,自曝光後之感光性樹脂組合物層剝離支持膜; (2)將上述支持膜剝離,其次使用曝光裝置於將焦點位置對準原先支持膜表面之部位之狀態下進行曝光; 使用精密鹼顯像機以最小顯像時間之2倍時間噴射30℃之1質量%Na2 CO3 水溶液而除去未曝光部,以與顯像時間相同之時間藉由純水進行水洗,藉由氣刀進行除水處理後進行熱風乾燥而獲得抗蝕劑圖案,於上述抗蝕劑圖案中,經過利用上述條件(1)之曝光而獲得之第1抗蝕劑圖案與經過利用上述條件(2)之曝光而獲得之第2抗蝕劑圖案之可圖案化之最小獨立細線寬之差為5 μm以下, 上述曝光裝置為 (a)曝光之光之峰值波長為350~370 nm之曝光裝置; (b)曝光之光之峰值波長為400~410 nm之曝光裝置; (c)曝光之光之峰值波長為360~380 nm及390~410 nm,且波長強度比為360~380 nm:390~410 nm=30:70之曝光裝置;及 (d)水銀短弧光燈 之任一者。 [2]如上述態樣1中記載之支持膜剝離後曝光用之感光性樹脂積層體,其用於形成配線。 [3]如上述態樣1或2中記載之支持膜剝離後曝光用之感光性樹脂積層體,其中 上述(A)鹼溶性高分子包含來自丙烯酸及甲基丙烯酸之至少一者之結構, 上述(B)與光起始劑具有反應性之化合物包含選自具有雜環結構之陽離子聚合性化合物及乙烯醚化合物之至少1種陽離子聚合性化合物, 上述(C)光起始劑包含光陽離子聚合起始劑。 [4]如上述態樣3中記載之支持膜剝離後曝光用之感光性樹脂積層體,其中上述(B)與光起始劑具有反應性之化合物包含具有雜環結構之陽離子聚合性化合物,且 上述具有雜環結構之陽離子聚合性化合物包含對季戊四醇加成平均9莫耳之環氧乙烷的聚乙二醇之四縮水甘油醚化合物及3-乙基-3{[(3-乙基氧雜環丁烷-3-基)甲氧基]甲基}氧雜環丁烷中之至少一者。 [5]如上述態樣1或2中記載之支持膜剝離後曝光用之感光性樹脂積層體,其中 上述(A)鹼溶性高分子包含來自丙烯酸及甲基丙烯酸中之至少一者之結構, 上述(B)與光起始劑具有反應性之化合物包含含有一個以上硫醇基之化合物及具有兩個以上乙烯性雙鍵之化合物, 上述包含一個以上硫醇基之化合物之量相對於上述感光性樹脂組合物之總質量為6質量%以上, 上述(C)光起始劑包含光聚合起始劑。 [6]如上述態樣5中記載之支持膜剝離後曝光用之感光性樹脂積層體,其中 上述包含一個以上硫醇基之化合物包含季戊四醇四(3-巰基丁酸)酯, 上述具有兩個以上乙烯性雙鍵之化合物包含具有雙酚A結構與兩個以上乙烯性雙鍵之化合物。 [7]如上述態樣3至6中任一項所記載之支持膜剝離後曝光用之感光性樹脂積層體,其中上述(A)鹼溶性高分子以上述(A)鹼溶性高分子為基準而包含50質量%以上之量的來自具有-OH基及/或-CN基之單體的單體單元。 [8]如上述態樣1至7中任一項所記載之感光性樹脂積層體,其具備配置於上述感光性樹脂組合物層之與上述支持膜為相反側之面之覆蓋膜。 [9]如上述態樣1至8中任一項所記載之支持膜剝離後曝光用之感光性樹脂積層體,其中上述(a)~(c)之曝光裝置的曝光之光為雷射光。 [10]一種抗蝕劑圖案之製造方法,其包含: 層壓步驟,將如上述態樣1至9中任一項所記載的感光性樹脂積層體之上述感光性樹脂組合物層密接於基材上; 支持膜剝離步驟,將上述感光性樹脂積層體之上述支持膜剝離; 曝光步驟,對上述感光性樹脂積層體進行曝光;以及 顯像步驟,對上述曝光之感光性樹脂積層體進行顯像。 [11]如上述態樣10中記載之抗蝕劑圖案之製造方法,其中上述曝光步驟包括自上述感光性樹脂積層體之設置有上述支持膜之側進行曝光。 [12]一種配線基板之製造方法,其包含: 抗蝕劑圖案形成步驟,藉由如上述態樣10或11中記載之方法製造具有抗蝕劑圖案之基板;及 配線形成步驟,藉由對上述具有抗蝕劑圖案之基板實施蝕刻或鍍覆而於基板上形成配線。 [發明之效果]
That is, the present invention is as follows.
[1] A photosensitive resin laminated body for exposure after peeling of a supporting film, which is provided with a supporting film and a photosensitive resin composition layer, the photosensitive resin composition layer is disposed on the supporting film and contains a photosensitive resin Composition; The above-mentioned photosensitive resin composition contains: (A) an alkali-soluble polymer; (B) a compound reactive with a photoinitiator and (C) a photoinitiator; using a # 400 ground material for lamination 35 μm rolled copper foil of 0.4 mm thick copper foil laminated board was subjected to jet scraping and grinding, and was then preheated to 60 ° C. By a hot roll laminator, the roll temperature was 105 ° C, the air pressure was 0.35 MPa, and the lamination speed was 1.5. The photosensitive resin laminate is laminated on the copper foil laminate under the condition of m / min, and then exposed in accordance with any one of the following conditions (1) and (2): (1) Use an exposure device to focus the position The exposure is performed with the support film surface aligned, and the support film is peeled from the photosensitive resin composition layer after the exposure; (2) The support film is peeled off, and then the exposure device is used to align the focus position with the original support film surface. Exposure in the state; use fine The alkali alkali imager sprays a 1% by mass Na 2 CO 3 aqueous solution at 30 ° C. at twice the minimum development time to remove the unexposed parts, and the water is washed with pure water at the same time as the development time, The blade is subjected to a dewatering treatment and then subjected to hot air drying to obtain a resist pattern. In the resist pattern, a first resist pattern obtained through exposure under the above-mentioned condition (1) and a first resist pattern obtained through the above-mentioned condition (2) The difference in the patternable minimum independent fine line width of the second resist pattern obtained by the exposure is 5 μm or less, and the above exposure device is (a) an exposure device having a peak wavelength of light of 350 to 370 nm; ( b) The exposure device has a peak wavelength of 400 to 410 nm; (c) The peak wavelength of the exposed light is 360 to 380 nm and 390 to 410 nm, and the wavelength intensity ratio is 360 to 380 nm: 390 to 410 nm = 30: 70 exposure device; and (d) any one of mercury short arc lamps. [2] The photosensitive resin laminated body for exposure after peeling of the support film as described in the aspect 1, which is used to form wiring. [3] The photosensitive resin laminate for exposure after peeling of the supporting film according to the aspect 1 or 2, wherein the (A) alkali-soluble polymer includes a structure derived from at least one of acrylic acid and methacrylic acid, and (B) The compound reactive with a photoinitiator includes at least one type of cationically polymerizable compound selected from a cationic polymerizable compound having a heterocyclic structure and a vinyl ether compound, and the (C) photoinitiator includes photocationic polymerization. Initiator. [4] The photosensitive resin laminate for exposing the support film after peeling as described in the above aspect 3, wherein the compound having reactivity with the photoinitiator (B) includes a cationically polymerizable compound having a heterocyclic structure, In addition, the cationically polymerizable compound having a heterocyclic structure includes a tetraglycidyl ether compound of polyethylene glycol, polyethylene glycol, and ethylene glycol added to an average of 9 moles of pentaerythritol, and 3-ethyl-3 {[(3-ethyl At least one of oxetane-3-yl) methoxy] methyl} oxetane. [5] The photosensitive resin laminate for exposure after peeling of the support film as described in the aspect 1 or 2 above, wherein the (A) alkali-soluble polymer includes a structure derived from at least one of acrylic acid and methacrylic acid, The compound (B) reactive with a photoinitiator includes a compound containing one or more thiol groups and a compound having two or more ethylenic double bonds, and the amount of the compound containing one or more thiol groups is relative to that of the photosensitizer. The total mass of the resin composition is 6% by mass or more, and the (C) photoinitiator includes a photopolymerization initiator. [6] The photosensitive resin laminate for exposing the support film after peeling as described in the aspect 5, wherein the compound containing one or more thiol groups includes pentaerythritol tetrakis (3-mercaptobutyrate), and the above has two The compound of the above ethylenic double bond includes a compound having a bisphenol A structure and two or more ethylenic double bonds. [7] The photosensitive resin laminate for exposure after peeling of the supporting film according to any one of aspects 3 to 6, wherein the (A) alkali-soluble polymer is based on the (A) alkali-soluble polymer In addition, a monomer unit derived from a monomer having an -OH group and / or -CN group is contained in an amount of 50% by mass or more. [8] The photosensitive resin laminate according to any one of aspects 1 to 7 above, comprising a cover film disposed on a surface of the photosensitive resin composition layer on a side opposite to the support film. [9] The photosensitive resin laminated body for exposure after peeling of the supporting film according to any one of aspects 1 to 8 above, wherein the exposure light of the exposure devices of (a) to (c) above is laser light. [10] A method for producing a resist pattern, comprising: a laminating step, in which the photosensitive resin composition layer of the photosensitive resin laminate according to any one of aspects 1 to 9 described above is adhered to a substrate On the substrate; a support film peeling step to peel off the support film of the photosensitive resin laminate; an exposure step to expose the photosensitive resin laminate; and a developing step to develop the exposed photosensitive resin laminate image. [11] The method for manufacturing a resist pattern according to the aspect 10, wherein the exposure step includes exposing from the side of the photosensitive resin laminate provided with the support film. [12] A method for manufacturing a wiring substrate, comprising: a resist pattern forming step, which manufactures a substrate having a resist pattern by the method described in aspect 10 or 11 above; and a wiring forming step, which The above-mentioned substrate having a resist pattern is subjected to etching or plating to form wiring on the substrate. [Effect of the invention]

根據本發明,提供即便於藉由支持膜剝離後曝光而製作電路基板之情形時亦可獲得不良品較少之電路基板的感光性樹脂積層體。According to the present invention, there is provided a photosensitive resin laminated body that can obtain a circuit board with fewer defective products even when a circuit board is produced by exposing the support film after exposure.

以下,對用以實施本發明之形態(以下亦稱作「本實施形態」)加以詳細說明。本發明並不限定於以下之實施形態,可於其主旨之範圍內進行各種變形而實施。本發明之各種特性值只要沒有特別記載,就是藉由本發明之[實施例]之項中所記載之方法或業者理解為與之等同之方法而測定之值。Hereinafter, the form (it is also hereafter called "this embodiment") for implementing this invention is demonstrated in detail. The present invention is not limited to the following embodiments, and can be implemented with various modifications within the scope of the gist thereof. As long as the various characteristic values of the present invention are not specifically described, they are values measured by the method described in the [Example] of the present invention or a method understood by the industry as equivalent.

<感光性樹脂積層體>
本實施形態提供一種感光性樹脂積層體,其係具備支持膜及感光性樹脂組合物層之支持膜剝離後曝光用之感光性樹脂積層體,上述感光性樹脂組合物層形成於該支持膜上,且包含感光性樹脂組合物,感光性樹脂組合物含有(A)鹼溶性高分子、(B)與光起始劑具有反應性之化合物及(C)光起始劑。
<Photosensitive resin laminate>
This embodiment provides a photosensitive resin laminate including a support film and a photosensitive resin laminate for exposing the support film after the support film is peeled off. The photosensitive resin composition layer is formed on the support film. The photosensitive resin composition contains (A) an alkali-soluble polymer, (B) a compound having reactivity with a photoinitiator, and (C) a photoinitiator.

作為支持膜,並無特別限定,較佳為使自曝光光源放射之光透過之透明者。作為此種支持膜,例如可列舉:聚對苯二甲酸乙二酯膜、聚乙烯醇膜、聚氯乙烯膜、氯乙烯共聚物膜、聚偏二氯乙烯膜、偏二氯乙烯共聚膜、聚甲基丙烯酸甲酯共聚物膜、聚苯乙烯膜、聚丙烯腈膜、苯乙烯共聚物膜、聚醯胺膜及纖維素衍生物膜。該等膜亦可視需要延伸。霧度較佳為0.01%~5.0%,更佳為0.01%~2.5%,進而較佳為0.01%~1.0%。至於膜之厚度,膜越薄則於圖像形成性及經濟性之方面越有利,但就維持強度之需要而言,較佳為10 μm~30 μm。The supporting film is not particularly limited, and a transparent film that transmits light emitted from an exposure light source is preferred. Examples of such a support film include a polyethylene terephthalate film, a polyvinyl alcohol film, a polyvinyl chloride film, a vinyl chloride copolymer film, a polyvinylidene chloride film, a vinylidene chloride copolymer film, Polymethyl methacrylate copolymer film, polystyrene film, polyacrylonitrile film, styrene copolymer film, polyamide film and cellulose derivative film. These films can also be extended as needed. The haze is preferably 0.01% to 5.0%, more preferably 0.01% to 2.5%, and still more preferably 0.01% to 1.0%. As for the thickness of the film, the thinner the film, the more advantageous it is in terms of image formation and economy, but in terms of the need to maintain strength, it is preferably 10 μm to 30 μm.

本實施形態之感光性樹脂積層體係第1抗蝕劑圖案及第2抗蝕劑圖案之間的可圖案化之最小獨立細線寬之差為5 μm以下者,上述第1抗蝕劑圖案係於未剝離支持膜之狀態下曝光、顯像後形成圖案而獲得者,上述第2抗蝕劑圖案係於在曝光前剝離支持膜後進行曝光、顯像,除此以外於與第1圖案相同之條件下形成圖案而獲得者。此種感光性樹脂積層體提供不良率低之抗蝕劑圖案。本實施形態之感光性樹脂積層體較佳為用於形成配線。作為與在和第1圖案相同之條件下形成圖案而獲得之第2抗蝕劑圖案之間的可圖案化之最小獨立細線寬之差之下限值,並無特別限制,可為0.01 μm以上、0.02 μm以上、0.3 μm以上、0.4 μm以上、0.5 μm以上、1 μm以上。In the photosensitive resin multilayer system of this embodiment, the difference between the patternable minimum independent fine line widths between the first resist pattern and the second resist pattern is 5 μm or less, and the first resist pattern is based on The second resist pattern is obtained by exposing and developing a pattern after the support film is not peeled off and developing. The second resist pattern is the same as the first pattern except that the support film is exposed and developed before the exposure. Formed under conditions. Such a photosensitive resin laminated body provides a resist pattern with a low defect rate. The photosensitive resin laminated body of this embodiment is preferably used for forming wiring. The lower limit value of the difference between the minimum independent thin line widths that can be patterned between the second resist patterns obtained by forming a pattern under the same conditions as the first pattern is not particularly limited and may be 0.01 μm or more , 0.02 μm or more, 0.3 μm or more, 0.4 μm or more, 0.5 μm or more, and 1 μm or more.

上述第1抗蝕劑圖案係使用#400之研削材(例如日本Carlit(股)製造之Sakurundum A(#400)或其等同品)對積層有35 μm壓延銅箔之0.4 mm厚之銅箔積層板進行噴射刮擦研磨,其後預熱至60℃,藉由熱輥貼合機(例如旭化成(股)公司製造之AL-700或其等同品)於輥溫度105℃、氣壓0.35 MPa、層壓速度1.5 m/min之條件下層壓感光性樹脂積層體後,進行依照條件(1)(即,使用下述曝光裝置,於將焦點位置對準支持膜表面之狀態下進行曝光,自曝光後之感光性樹脂組合物層剝離支持膜)之曝光,使用精密鹼顯像機(例如富士機工製造之精密鹼顯像機或其等同品)以最小顯像時間之2倍時間噴射30℃之1質量%Na2 CO3 水溶液而除去未曝光部,以與顯像時間相同之時間藉由純水進行水洗,藉由氣刀進行除水處理後進行熱風乾燥而獲得之抗蝕劑圖案。再者,於本發明中,「支持膜表面」意指支持膜之與感光性樹脂組合物層側為相反側之面。The above-mentioned first resist pattern is a 0.4 mm thick copper foil laminated layer using a # 400 ground material (for example, Sakurundum A (# 400) manufactured by Carlit Co., Ltd. or its equivalent) with a 35 μm rolled copper foil on the laminated layer. The board is subjected to jet scraping and grinding, and then preheated to 60 ° C, and heated by a hot roll laminator (such as AL-700 manufactured by Asahi Kasei Co., Ltd. or its equivalent) at a roll temperature of 105 ° C, an air pressure of 0.35 MPa, After laminating the photosensitive resin laminate at a pressing speed of 1.5 m / min, the exposure is performed in accordance with the condition (1) (that is, using the following exposure device with the focus position aligned with the surface of the support film). The photosensitive resin composition layer peeling support film) is exposed, and a precision alkali developer (for example, a precision alkali developer manufactured by Fuji Machine Engineering or its equivalent) is used to spray 1 at 30 ° C for two times the minimum development time. A resist pattern obtained by removing unexposed portions by mass% Na 2 CO 3 aqueous solution, washing with pure water at the same time as the development time, and performing dewatering treatment with an air knife, followed by hot air drying. In addition, in the present invention, the "supporting film surface" means a surface of the supporting film opposite to the photosensitive resin composition layer side.

上述第2抗蝕劑圖案係進行依照條件(2)(即,剝離支持膜,其次使用下述曝光裝置,於將焦點位置對準原先支持膜表面之部位之狀態下進行曝光)代替上述條件(1)之曝光,除此以外藉由與上述第1抗蝕劑圖案之形成相同之順序而獲得之抗蝕劑圖案。The second resist pattern is performed in accordance with the condition (2) (that is, the support film is peeled off, followed by exposure using the following exposure device in a state where the focus position is aligned with the original support film surface) in place of the above condition ( Except for the exposure of 1), a resist pattern obtained by the same procedure as in the formation of the first resist pattern described above.

上述第1及第2抗蝕劑圖案之形成中所使用之上述曝光裝置係 (a)曝光之光之峰值波長為350~370 nm之曝光裝置; (b)曝光之光之峰值波長為400~410 nm之曝光裝置; (c)曝光之光之峰值波長為360~380 nm與390~410 nm,且波長強度比為360~380 nm:390~410 nm=30:70之曝光裝置;及 (d)水銀短弧光燈 之任一者。The above-mentioned exposure device used in the formation of the first and second resist patterns is (a) an exposure device having a peak wavelength of light of 350 to 370 nm; (b) a peak wavelength of the light of exposure to 400 to 410 nm exposure device; (c) exposure device with peak wavelengths of 360 to 380 nm and 390 to 410 nm and a wavelength intensity ratio of 360 to 380 nm: 390 to 410 nm = 30: 70; and ( d) Any one of the mercury short arc lamps.

於較佳之對應中,上述(a)~(c)之曝光裝置的曝光之光為雷射光。In a preferred correspondence, the exposure light of the exposure devices of (a) to (c) above is laser light.

本發明者發現於除有無剝離支持膜以外於相同條件下進行感光性樹脂積層體之曝光及顯像之情形時,圖案形狀產生差異之原因在於氧阻礙。即,若於曝光前剝離支持膜,則感光性樹脂組合物層之支持膜形成側之面由於支持膜之剝離而露出,與空氣接觸,氧擴散至感光性樹脂組合物層中。由於該氧,於曝光時產生之自由基失去活性。其結果,利用曝光所進行之硬化變得不充分,與在未剝離支持膜之狀態下進行曝光、顯像時相比,圖案形狀惡化。本發明者發現若形成難以受到如上所述之氧阻礙之感光性樹脂組合物層,則可實現良好之圖案形狀。The present inventors have found that when the photosensitive resin laminated body is exposed and developed under the same conditions except for the presence or absence of a peeling support film, the cause of the difference in pattern shape is oxygen barrier. That is, when the support film is peeled off before exposure, the surface on the support film formation side of the photosensitive resin composition layer is exposed due to the peeling of the support film, and it comes into contact with air, and oxygen diffuses into the photosensitive resin composition layer. Due to this oxygen, free radicals generated during exposure are deactivated. As a result, the hardening by exposure becomes insufficient, and the pattern shape deteriorates compared with the case where exposure and development are performed without peeling a support film. The inventors have found that if a photosensitive resin composition layer is formed which is difficult to be hindered by oxygen as described above, a good pattern shape can be achieved.

作為獲得難以受到氧阻礙之感光性樹脂組合物層之方法,可列舉將感光性樹脂組合物層之透氧性設為極低之值。An example of a method for obtaining a photosensitive resin composition layer that is hardly hindered by oxygen is to set the oxygen permeability of the photosensitive resin composition layer to an extremely low value.

作為降低透氧性之方法,可列舉提高感光性樹脂組合物層中之分子(尤其是(A)鹼溶性高分子之分子)之凝聚密度,製成氧難以滲入之感光性樹脂組合物層。作為該方法,考慮了藉由-OH或-CN等之氫鍵等之相互作用而提高樹脂凝聚密度,使氧滲入之間隙變小之方法。As a method for reducing the oxygen permeability, it is possible to increase the aggregation density of molecules in the photosensitive resin composition layer (especially (A) molecules of an alkali-soluble polymer), and prepare a photosensitive resin composition layer in which oxygen is difficult to penetrate. As this method, a method of increasing the resin cohesion density by the interaction of hydrogen bonds such as -OH, -CN, and the like to reduce the gap of oxygen penetration is considered.

除了將透氧性設為極低之值以外,作為獲得難以受到氧阻礙之感光性樹脂組合物層之方法,可列舉將感光性樹脂組合物之聚合機制設為難以受到氧之影響之機制(例如製成陽離子聚合性、烯硫醇反應性等之感光性樹脂組合物)。In addition to setting the oxygen permeability to an extremely low value, examples of a method for obtaining a photosensitive resin composition layer that is hardly hindered by oxygen include a mechanism in which the polymerization mechanism of the photosensitive resin composition is hardly affected by oxygen ( For example, a photosensitive resin composition such as cationically polymerizable and enethiol-reactive).

於使用光陽離子聚合起始劑之陽離子聚合性感光性樹脂組合物之情形時,藉由吸收光而產生強酸性物質,藉此將對應之雜原子質子化而進行聚合反應。於此過程中,並不產生自由基,因此並未受氧之阻礙。In the case of a cationic polymerization photosensitive resin composition using a photocationic polymerization initiator, a strong acidic substance is generated by absorbing light, thereby protonating a corresponding hetero atom to perform a polymerization reaction. During this process, free radicals are not generated and therefore are not hindered by oxygen.

於利用烯硫醇反應之感光性樹脂組合物之情形時,進行利用所產生之硫自由基的聚合。進而,硫醇基和不飽和乙烯基與氧反應而產生的對於聚合反應為惰性之自由基反應,生成可進行聚合反應之硫自由基。即,具有使由於氧阻礙而失去之活性自由基復活之效果。In the case of a photosensitive resin composition using an enethiol reaction, polymerization is performed using a generated sulfur radical. Furthermore, a thiol group and an unsaturated vinyl group react with oxygen to generate a radical reaction that is inert to the polymerization reaction, thereby generating a sulfur radical capable of undergoing the polymerization reaction. That is, it has the effect of reviving active radicals lost due to oxygen barrier.

再者,作為帶來烯硫醇反應之物質,較佳為包含硫醇基之化合物,但只要是具有自上述惰性自由基產生活性自由基之效果之物質,就不限定於包含硫醇基之化合物。Furthermore, as the substance that brings about the enethiol reaction, a compound containing a thiol group is preferred, but as long as it has the effect of generating an active radical from the inert free radical, it is not limited to a compound containing a thiol group Compound.

作為感光性樹脂組合物之透氧性較低及成為難以受到氧阻礙之機制之指標,可使用上述第1抗蝕劑圖案與第2抗蝕劑圖案的可圖案化之最小獨立細線寬之差。As an indicator of the low oxygen permeability of the photosensitive resin composition and the mechanism that it is difficult to be blocked by oxygen, the smallest independent fine line width difference between the first resist pattern and the second resist pattern that can be patterned can be used. .

利用烯硫醇反應之感光性樹脂組合物中所含之包含硫醇基之化合物需要包含1個以上硫醇基,較佳為包含2個以上者,更佳為包含3個以上,進而較佳為包含4個以上。The compound containing a thiol group contained in the photosensitive resin composition using an enethiol reaction needs to contain one or more thiol groups, preferably one containing two or more thiols, more preferably three or more, and more preferably It contains 4 or more.

為了抑制顯像時之膨潤,上述包含硫醇基之化合物所具有之官能基較佳為包含親水性低之官能基,例如較佳為包含有機概念圖(甲田善生著,「有機概念圖 -基礎與應用-」,三共出版社(1984))中之I值未達70之官能基,更佳為包含I值為65以下之官能基。作為I值未達70之官能基,例如可列舉:-COO-、-CO-、-NCO、-O-、-SH、-S-等。In order to suppress swelling during development, the functional group possessed by the thiol group-containing compound preferably contains a functional group having low hydrophilicity, for example, it is preferable to include an organic concept map (by Koda Shansheng, "Organic Concept Map-Basic And application- ", Sankyo Publishing House (1984)), functional groups having an I value of less than 70, more preferably containing functional groups having an I value of 65 or less. Examples of the functional group having an I value of less than 70 include -COO-, -CO-, -NCO, -O-, -SH, -S-, and the like.

以下,對構成本實施形態之感光性樹脂組合物之各成分之適當例加以說明。Hereinafter, a suitable example of each component which comprises the photosensitive resin composition of this embodiment is demonstrated.

[(A)鹼溶性高分子]
(A)鹼溶性高分子係可溶解於鹼性物質中之高分子。自鹼性顯像性之觀點考慮,感光性樹脂組合物較佳為具有羧基,進而較佳為具有來自含羧基單體之單體單元。(A)鹼溶性高分子可為熱塑性。
[(A) Alkali-soluble polymer]
(A) Alkali-soluble polymers are polymers that are soluble in alkaline substances. From the viewpoint of basic developability, the photosensitive resin composition preferably has a carboxyl group, and more preferably has a monomer unit derived from a carboxyl group-containing monomer. (A) The alkali-soluble polymer may be thermoplastic.

作為降低透氧性之方法,於較佳之態樣中,(A)鹼溶性高分子包含來自具有-OH基及/或-CN基之單體的單體單元。於使用具有-OH基及/或-CN基之單體(例如丙烯腈、乙烯醇、乙烯基苯酚等)而獲得(A)鹼溶性高分子之情形時,可提高(A)鹼溶性高分子之分子間相互作用,因此可提高感光性樹脂組合物層中之(A)鹼溶性高分子之凝聚密度而降低透氧性,因此較佳。至於來自具有-OH基及/或-CN基之單體的單體單元之量,以(A)鹼溶性高分子為基準而較佳為50質量%以上,更佳為60質量%以上,進而較佳為70質量%以上。該單體單元之量亦可為100質量%,但就顯像性與感光層柔軟性之觀點而言,較佳為90質量%以下,更佳為80質量%以下,進而較佳為70質量%以下。As a method for reducing the oxygen permeability, in a preferred embodiment, the (A) alkali-soluble polymer includes a monomer unit derived from a monomer having an -OH group and / or -CN group. When (A) an alkali-soluble polymer is obtained using a monomer (for example, acrylonitrile, vinyl alcohol, vinylphenol, etc.) having an -OH group and / or -CN group, (A) the alkali-soluble polymer can be improved Because of the intermolecular interaction, it is preferable to increase the aggregation density of the (A) alkali-soluble polymer in the photosensitive resin composition layer and reduce the oxygen permeability. As for the amount of the monomer unit derived from the monomer having an -OH group and / or -CN group, it is preferably 50% by mass or more, more preferably 60% by mass or more based on the (A) alkali-soluble polymer, and furthermore It is preferably 70% by mass or more. The amount of the monomer unit may be 100% by mass, but from the viewpoint of developability and flexibility of the photosensitive layer, it is preferably 90% by mass or less, more preferably 80% by mass or less, and even more preferably 70% by mass. %the following.

(A)鹼溶性高分子較佳為包含具有芳香族基之共聚物,特佳為包含側鏈具有芳香族基之共聚物。再者,作為此種芳香族基,例如可列舉經取代或未經取代之苯基、或者經取代或未經取代之芳烷基。作為具有芳香族基之共聚物於(A)成分中所占之比率,較佳為30質量%以上,更佳為40質量%以上,更佳為50質量%以上,更佳為70質量%以上,進而較佳為80質量%以上。就維持良好之鹼溶性之觀點而言,較佳為95質量%以下,更佳為90質量%以下,進而較佳為可為85質量%。(A) The alkali-soluble polymer preferably includes a copolymer having an aromatic group, and particularly preferably includes a copolymer having an aromatic group in a side chain. Examples of such an aromatic group include a substituted or unsubstituted phenyl group and a substituted or unsubstituted aralkyl group. The proportion of the copolymer having an aromatic group in the component (A) is preferably 30% by mass or more, more preferably 40% by mass or more, more preferably 50% by mass or more, and even more preferably 70% by mass or more. And more preferably 80% by mass or more. From the viewpoint of maintaining good alkali solubility, it is preferably 95% by mass or less, more preferably 90% by mass or less, and still more preferably 85% by mass.

又,就抗蝕劑圖案之高解像性及疏水性之觀點而言,(A)鹼溶性高分子中之具有芳香族基之共聚單體之共聚比率較佳為20質量%以上,更佳為30質量%以上,更佳為40質量%以上,更佳為50質量%以上,更佳為60質量%以上,更佳為70質量%以上,進而較佳為80質量%以上。作為共聚比率之上限,並無特別限制,但就維持良好之鹼溶性之觀點而言,較佳為95質量%以下,更佳為90質量%以下。From the viewpoint of high resolution and hydrophobicity of the resist pattern, the copolymerization ratio of (A) the comonomer having an aromatic group in the alkali-soluble polymer is preferably 20% by mass or more, more preferably It is 30% by mass or more, more preferably 40% by mass or more, more preferably 50% by mass or more, more preferably 60% by mass or more, even more preferably 70% by mass or more, and even more preferably 80% by mass or more. The upper limit of the copolymerization ratio is not particularly limited, but from the viewpoint of maintaining good alkali solubility, it is preferably 95% by mass or less, and more preferably 90% by mass or less.

作為上述具有芳香族基之共聚單體,例如可列舉具有芳烷基之單體、苯乙烯及可聚合之苯乙烯衍生物(例如:甲基苯乙烯、乙烯基苯酚、乙烯基甲苯、第三丁氧基苯乙烯、乙醯氧基苯乙烯、4-乙烯基苯甲酸、苯乙烯二聚物、苯乙烯三聚物等)。其中,較佳為具有芳烷基之單體或苯乙烯,更佳為具有芳烷基之單體。Examples of the comonomer having an aromatic group include a monomer having an aralkyl group, styrene, and a polymerizable styrene derivative (for example, methylstyrene, vinylphenol, vinyltoluene, third Butoxystyrene, ethoxylated styrene, 4-vinylbenzoic acid, styrene dimer, styrene terpolymer, etc.). Among them, a monomer having aralkyl group or styrene is preferable, and a monomer having aralkyl group is more preferable.

於具有芳香族基之共聚單體包含苯乙烯之情形時,至於(A)鹼溶性高分子中之苯乙烯之共聚比率,就抗蝕劑圖案之高解像性及疏水性之觀點而言,較佳為15質量%以上,更佳為30質量%以上,進而較佳為50質量%以上,就維持良好之鹼溶性之觀點而言,較佳為80質量%以下,更佳為70質量%以下,進而較佳為60質量%以下。When the comonomer having an aromatic group contains styrene, as for the copolymerization ratio of styrene in the (A) alkali-soluble polymer, from the viewpoint of high resolution and hydrophobicity of the resist pattern, It is preferably 15% by mass or more, more preferably 30% by mass or more, and further preferably 50% by mass or more. From the viewpoint of maintaining good alkali solubility, it is preferably 80% by mass or less, and more preferably 70% by mass. Hereinafter, it is more preferably 60% by mass or less.

作為芳烷基,可列舉經取代或未經取代之苄基、經取代或未經取代之苯烷基(苄基除外)等,較佳為經取代或未經取代之苄基。Examples of the aralkyl group include a substituted or unsubstituted benzyl group, a substituted or unsubstituted benzyl group (except benzyl), and the like, and a substituted or unsubstituted benzyl group is preferred.

作為具有苄基之共聚單體,可列舉:具有苄基之(甲基)丙烯酸酯,例如(甲基)丙烯酸苄基酯、(甲基)丙烯酸氯苄基酯等;具有苄基之乙烯基單體,例如乙烯基苄基氯、乙烯基苄基醇等。其中較佳為(甲基)丙烯酸苄基酯。Examples of the comonomer having a benzyl group include a (meth) acrylate having a benzyl group, such as a benzyl (meth) acrylate, a chlorobenzyl (meth) acrylate, and the like; a vinyl group having a benzyl group Monomers such as vinyl benzyl chloride, vinyl benzyl alcohol, and the like. Among these, benzyl (meth) acrylate is preferred.

作為具有苯烷基(苄基除外)之共聚單體,可列舉(甲基)丙烯酸苯基乙酯等。Examples of the comonomer having a phenylalkyl group (except benzyl) include phenylethyl (meth) acrylate and the like.

側鏈具有芳香族基(特佳為苄基)之共聚物較佳為藉由對具有芳香族基之單體與下述第一單體之至少1種及/或下述第二單體之至少1種進行聚合而獲得。The copolymer having an aromatic group (particularly a benzyl group) in the side chain is preferably prepared by comparing at least one of a monomer having an aromatic group and a first monomer described below and / or a second monomer described below. It is obtained by polymerizing at least one species.

除側鏈具有芳香族基之共聚物以外之(A)鹼溶性高分子較佳為藉由將下述第一單體之至少1種聚合而獲得,更佳為藉由將第一單體之至少1種與下述第二單體之至少1種共聚而獲得。The (A) alkali-soluble polymer other than the copolymer having an aromatic group in the side chain is preferably obtained by polymerizing at least one of the following first monomers, and more preferably by polymerizing the first monomers. It is obtained by copolymerizing at least one species with at least one species of the second monomer described below.

第一單體係分子中具有羧基之單體。作為第一單體,例如可列舉:(甲基)丙烯酸、富馬酸、肉桂酸、丁烯酸、伊康酸、4-乙烯基苯甲酸、馬來酸酐、馬來酸半酯等。該等中較佳為(甲基)丙烯酸。再者,於本說明書中,「(甲基)丙烯酸」意指丙烯酸或甲基丙烯酸,「(甲基)丙烯醯基」意指丙烯醯基或甲基丙烯醯基,且「(甲基)丙烯酸酯」意指「丙烯酸酯」或「甲基丙烯酸酯」。A monomer having a carboxyl group in the first single-system molecule. Examples of the first monomer include (meth) acrylic acid, fumaric acid, cinnamic acid, butenoic acid, itaconic acid, 4-vinylbenzoic acid, maleic anhydride, and maleic acid half esters. Among these, (meth) acrylic acid is preferred. Further, in this specification, "(meth) acrylic acid" means acrylic acid or methacrylic acid, "(meth) acrylfluorenyl" means acrylfluorenyl or methacrylfluorenyl, and "(meth) "Acrylate" means "acrylate" or "methacrylate".

第一單體之共聚比率係以藉由將第一單體之至少1種聚合而獲得之聚合物之全部單體成分之合計質量為基準而言,較佳為10~50質量%。就表現良好之顯像性之觀點而言,較佳為將該共聚比率設為10質量%以上。就抗蝕劑圖案之高解像性之觀點而言、進而就抗蝕劑圖案之耐化學品性之觀點而言較佳為將該共聚比率設為50質量%以下,於該等之觀點中,更佳為35質量%以下,進而較佳為30質量%以下,特佳為25質量%以下,最佳為20質量%以下。The copolymerization ratio of the first monomer is preferably 10 to 50% by mass based on the total mass of all monomer components of the polymer obtained by polymerizing at least one of the first monomers. From the viewpoint of good developability, the copolymerization ratio is preferably 10% by mass or more. From the viewpoint of high resolution of the resist pattern, and further from the viewpoint of chemical resistance of the resist pattern, the copolymerization ratio is preferably 50% by mass or less. Among these viewpoints, It is more preferably 35% by mass or less, further preferably 30% by mass or less, particularly preferably 25% by mass or less, and most preferably 20% by mass or less.

第二單體為非酸性,且於分子中具有至少1個聚合性不飽和基之單體。作為第二單體,例如可列舉:(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸正丙酯、(甲基)丙烯酸異丙酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸異丁酯、(甲基)丙烯酸第三丁酯、(甲基)丙烯酸2-羥乙酯、(甲基)丙烯酸2-羥丙酯、(甲基)丙烯酸環己酯、(甲基)丙烯酸2-乙基己酯等(甲基)丙烯酸酯類;乙酸乙烯酯等乙烯醇之酯類;以及(甲基)丙烯腈等。The second monomer is a monomer which is non-acidic and has at least one polymerizable unsaturated group in the molecule. Examples of the second monomer include methyl (meth) acrylate, ethyl (meth) acrylate, n-propyl (meth) acrylate, isopropyl (meth) acrylate, and n- (meth) acrylate Butyl ester, isobutyl (meth) acrylate, third butyl (meth) acrylate, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, (meth) acrylic ring (Meth) acrylates such as hexyl ester, 2-ethylhexyl (meth) acrylate; vinyl alcohol esters such as vinyl acetate; and (meth) acrylonitrile.

就顯像性之觀點而言,較佳為(A)鹼溶性高分子包含來自丙烯酸及甲基丙烯酸中之至少一者之結構。From the viewpoint of developability, the (A) alkali-soluble polymer preferably includes a structure derived from at least one of acrylic acid and methacrylic acid.

於本實施形態中,(A)鹼溶性高分子可藉由已知之聚合法、較佳為加成聚合、更佳為自由基聚合使上述說明之單數或複數個單體聚合而製備。就抗蝕劑圖案之耐化學品性、密接性、高解像性或底部形狀之觀點而言,較佳為含有具有芳烷基之單體及/或苯乙烯作為單體例如可列舉:甲基丙烯酸與乙烯醇及苯乙烯之共聚物、甲基丙烯酸與丙烯腈及苯乙烯之共聚物、甲基丙烯酸與苯乙烯及甲基丙烯酸甲酯之共聚物等。In this embodiment, (A) the alkali-soluble polymer can be prepared by polymerizing the singular or plural monomers described above by a known polymerization method, preferably addition polymerization, more preferably radical polymerization. From the viewpoint of chemical resistance, adhesion, high resolution, or bottom shape of the resist pattern, it is preferable to include a monomer having an aralkyl group and / or styrene as the monomer. Examples include: Copolymers of acrylic acid and vinyl alcohol and styrene, copolymers of methacrylic acid and acrylonitrile and styrene, copolymers of methacrylic acid and styrene and methyl methacrylate, and the like.

至於(A)鹼溶性高分子之酸當量(於(A)成分包含複數種共聚物之情形時,係其混合物整體之酸當量),就感光性樹脂組合物層之耐顯像性以及抗蝕劑圖案之解像性及密接性之觀點而言,較佳為100以上,就感光性樹脂組合物層之顯像性及剝離性之觀點而言,較佳為600以下。(A)鹼溶性高分子之酸當量更佳為200~500,進而較佳為250~450。As for the acid equivalent of the (A) alkali-soluble polymer (in the case where the component (A) contains a plurality of copolymers, the acid equivalent of the entire mixture), the development resistance of the photosensitive resin composition layer and the corrosion resistance From the viewpoint of resolution and adhesion of the agent pattern, it is preferably 100 or more, and from the viewpoint of the developability and peelability of the photosensitive resin composition layer, it is preferably 600 or less. (A) The acid equivalent of the alkali-soluble polymer is more preferably 200 to 500, and more preferably 250 to 450.

(A)鹼溶性高分子之重量平均分子量(於(A)成分包含複數種之共聚物之情形時,係其混合物整體之重量平均分子量)較佳為5,000~500,000。至於(A)鹼溶性高分子之重量平均分子量,就均勻地維持乾膜抗蝕劑之厚度、獲得對顯像液之耐性之觀點而言,較佳為5,000以上,就維持乾膜抗蝕劑之顯像性之觀點、抗蝕劑圖案之高解像性及底部形狀之觀點、進而抗蝕劑圖案之耐化學品性之觀點而言,較佳為500,000以下。(A)鹼溶性高分子之重量平均分子量更佳為10,000~200,000,進而較佳為20,000~100,000,特佳為30,000~70,000。(A)鹼溶性高分子之分子量之分散指數較佳為1.0~6.0。The weight average molecular weight of the (A) alkali-soluble polymer (when the component (A) contains a plurality of types of copolymers, the weight average molecular weight of the entire mixture thereof) is preferably 5,000 to 500,000. As for the weight average molecular weight of the (A) alkali-soluble polymer, it is preferably 5,000 or more from the viewpoint of uniformly maintaining the thickness of the dry film resist and obtaining resistance to a developing solution, and maintaining the dry film resist From the viewpoint of the developability, the viewpoint of the high resolution of the resist pattern and the shape of the bottom, and the viewpoint of the chemical resistance of the resist pattern, it is preferably 500,000 or less. (A) The weight average molecular weight of the alkali-soluble polymer is more preferably 10,000 to 200,000, further preferably 20,000 to 100,000, and particularly preferably 30,000 to 70,000. (A) The molecular weight dispersion index of the alkali-soluble polymer is preferably 1.0 to 6.0.

於本實施形態中,感光性樹脂組合物中之(A)鹼溶性高分子之含量以感光性樹脂組合物之固形物成分總量為基準(以下,只要沒有特別明示,則於各含有成分中相同)較佳為10質量%~90質量%,更佳為20質量%~80質量%,進而較佳為30質量%~60質量%,進而較佳為35質量%~55質量%之範圍。至於(A)鹼溶性高分子之含量,就維持感光性樹脂組合物層之鹼性顯像性之觀點而言較佳為10質量%以上,就由曝光形成之抗蝕劑圖案充分發揮作為抗蝕劑材料之性能之觀點、抗蝕劑圖案之高解像性及底部形狀之觀點、進而抗蝕劑圖案之耐化學品性之觀點而言較佳為90質量%以下,更佳為70質量%以下,進而較佳為60質量%以下。In this embodiment, the content of the (A) alkali-soluble polymer in the photosensitive resin composition is based on the total amount of solid components of the photosensitive resin composition (hereinafter, unless otherwise specified, it is included in each contained component The same) is preferably 10% by mass to 90% by mass, more preferably 20% by mass to 80% by mass, still more preferably 30% by mass to 60% by mass, and still more preferably 35 to 55% by mass. As for the content of the (A) alkali-soluble polymer, it is preferably 10% by mass or more from the viewpoint of maintaining the alkali developability of the photosensitive resin composition layer, and the resist pattern formed by exposure is fully exerted as an anti-resistance. The viewpoint of the performance of the resist material, the viewpoint of the high resolution of the resist pattern and the shape of the bottom, and the viewpoint of the chemical resistance of the resist pattern are preferably 90% by mass or less, more preferably 70% by mass. % Or less, more preferably 60% by mass or less.

[(B)與光起始劑具有反應性之化合物] (B)與光起始劑具有反應性之化合物可根據感光性樹脂組合物所需之聚合樣式,以與下述(C)光起始劑之組合進行選擇。例如,於將感光性樹脂組合物設為陽離子聚合性之情形之較佳例中,(B)與光起始劑具有反應性之化合物為選自具有雜環結構之陽離子聚合性化合物及乙烯醚化合物之至少1種陽離子聚合性化合物或包含其,(C)光起始劑為光陽離子聚合起始劑或包含其。再者,於該例中,更佳為(A)鹼溶性高分子包含來自丙烯酸及甲基丙烯酸之至少一者之結構。[(B) A compound reactive with a photoinitiator] (B) A compound reactive with a photoinitiator may be reacted with the following (C) according to the polymerization pattern required for the photosensitive resin composition. The combination of initiators is selected. For example, in a preferred example of the case where the photosensitive resin composition is cationically polymerizable, the compound (B) having reactivity with a photoinitiator is selected from a cationically polymerizable compound having a heterocyclic structure and vinyl ether. At least one type of compound of the compound may include a cationic polymerizable compound, and the (C) photoinitiator is a photocationic polymerization initiator or includes the same. Furthermore, in this example, it is more preferable that (A) the alkali-soluble polymer includes a structure derived from at least one of acrylic acid and methacrylic acid.

作為更佳之例,(B)與光起始劑具有反應性之化合物為具有雜環結構之陽離子聚合性化合物或包含其。作為具有雜環結構之陽離子聚合性化合物之較佳例,可列舉:對雙酚A之兩端分別加成平均5莫耳之環氧乙烷的聚乙二醇之二縮水甘油醚、雙酚A二縮水甘油醚、對季戊四醇加成平均9莫耳之環氧乙烷的聚乙二醇之四縮水甘油醚、對三羥甲基丙烷加成平均9莫耳之環氧乙烷的聚乙二醇之三縮水甘油醚、3-乙基-3{[(3-乙基氧雜環丁烷-3-基)甲氧基]甲基}氧雜環丁烷等。特佳為具有雜環結構之陽離子聚合性化合物為對季戊四醇加成平均9莫耳之環氧乙烷的聚乙二醇之四縮水甘油醚及3-乙基-3{[(3-乙基氧雜環丁烷-3-基)甲氧基]甲基}氧雜環丁烷中之至少一者或包含其。As a more preferable example, the compound having a reactivity with the photoinitiator (B) is a cationically polymerizable compound having a heterocyclic structure or includes it. Preferable examples of the cationically polymerizable compound having a heterocyclic structure include diglycidyl ether of polyethylene glycol, which is an average of 5 moles of ethylene oxide added to both ends of bisphenol A, and bisphenol A diglycidyl ether, polyethylene glycol tetraglycidyl ether with an average 9 moles of ethylene oxide added to pentaerythritol, polyethylene glycol with an average 9 moles of ethylene oxide added to trimethylolpropane Triglycidyl ethers of diols, 3-ethyl-3 {[(3-ethyloxetane-3-yl) methoxy] methyl} oxetane, and the like. Particularly preferred is a cationic polymerizable compound having a heterocyclic structure, a tetraglycidyl ether of polyethylene glycol with an average of 9 moles of ethylene oxide added to pentaerythritol, and 3-ethyl-3 {[(3-ethyl At least one of oxetane-3-yl) methoxy] methyl} oxetane or includes it.

作為乙烯醚化合物之較佳例,可列舉二乙二醇單乙烯醚等。Preferred examples of the vinyl ether compound include diethylene glycol monovinyl ether and the like.

於將感光性樹脂組合物設為烯硫醇反應性之情形時的較佳例中,(B)與光起始劑具有反應性之化合物為包含一個以上硫醇基之化合物與具有兩個以上乙烯性雙鍵之化合物或包含其等,(C)光起始劑為光聚合起始劑或包含其。再者,於該例中,更佳為(A)鹼溶性高分子包含來自丙烯酸及甲基丙烯酸中之至少一者之結構。In a preferable example when the photosensitive resin composition is made reactive with enethiol, the compound (B) having reactivity with a photoinitiator is a compound containing one or more thiol groups and having two or more thiol groups. The compound containing an ethylenic double bond may include the same, and the (C) photoinitiator is a photopolymerization initiator or includes the same. Furthermore, in this example, it is more preferable that (A) the alkali-soluble polymer includes a structure derived from at least one of acrylic acid and methacrylic acid.

作為上述包含一個以上硫醇基之化合物,可列舉季戊四醇四(3-巰基丁酸)酯等。包含一個以上硫醇基之化合物較佳為季戊四醇四(3-巰基丁酸)酯或包含其。Examples of the compound containing one or more thiol groups include pentaerythritol tetrakis (3-mercaptobutyrate) and the like. The compound containing one or more thiol groups is preferably pentaerythritol tetrakis (3-mercaptobutyrate) or includes it.

包含硫醇基之化合物之量較佳為相對於感光性樹脂組合物之總質量而超過5質量%,更佳為6質量%以上,更佳為7質量%以上,進而較佳為9質量%以上,特佳為10質量%以上,又,較佳為85質量%以下,更佳為80質量%以下,進而較佳為75質量%以下,特佳為70質量%以下。The amount of the thiol group-containing compound is preferably more than 5 mass%, more preferably 6 mass% or more, still more preferably 7 mass% or more, and still more preferably 9 mass% with respect to the total mass of the photosensitive resin composition. The above is particularly preferably 10% by mass or more, more preferably 85% by mass or less, more preferably 80% by mass or less, still more preferably 75% by mass or less, and particularly preferably 70% by mass or less.

包含硫醇基之化合物之量以質量基準計,較佳為相對於起始劑量為0.3倍以上,更佳為1倍以上,進而較佳為5倍以上,特佳為10倍以上,又,較佳為100倍以下,更佳為50倍以下,進而較佳為40倍以下,特佳為30倍以下。The amount of the thiol group-containing compound is, on a mass basis, preferably 0.3 times or more, more preferably 1 time or more, still more preferably 5 times or more, particularly preferably 10 times or more, with respect to the starting dose. It is preferably 100 times or less, more preferably 50 times or less, even more preferably 40 times or less, and particularly preferably 30 times or less.

<具有乙烯性雙鍵之化合物> 作為(B)與光起始劑具有反應性之化合物的具有乙烯性雙鍵之化合物係由於在其結構中具有乙烯性不飽和基而具有聚合性之化合物。作為此種化合物,可列舉:對聚環氧烷之一末端加成(甲基)丙烯酸而成之化合物、對聚環氧烷之一末端加成(甲基)丙烯酸、且使另一末端烷基醚或烯丙醚化而成之化合物等(第1群之化合物);於環氧烷鏈之兩末端具有(甲基)丙烯醯基之化合物、於藉由無規或嵌段將環氧乙烷鏈與環氧丙烷鏈鍵結而成之環氧烷鏈的兩末端具有(甲基)丙烯醯基之化合物、將雙酚A改性而成之化合物等(第2群之化合物);於一分子中具有3個以上(甲基)丙烯醯基之化合物等(第3群之化合物);等。<Compound having an ethylenic double bond> The compound having an ethylenic double bond which is a compound having reactivity with a photoinitiator (B) is a compound having a polymerizability because it has an ethylenically unsaturated group in its structure. Examples of such a compound include a compound obtained by adding (meth) acrylic acid to one end of a polyalkylene oxide, adding (meth) acrylic acid to one end of a polyalkylene oxide, and making the other terminal alkylene Compounds derived from etherification of allyl ethers or allyl groups (compounds of group 1); compounds having (meth) acrylfluorene groups at both ends of the alkylene oxide chain; Compounds having a (meth) acrylfluorenyl group at both ends of an alkylene oxide chain formed by bonding of an ethane chain and a propylene oxide chain, a compound modified by bisphenol A, and the like (group 2 compound); Compounds having three or more (meth) acrylfluorenyl groups in one molecule (compounds of group 3); etc.

作為第1群之其他化合物,具體而言例如可列舉:對苯基加成有聚乙二醇之化合物的(甲基)丙烯酸酯即苯氧基六乙二醇單(甲基)丙烯酸酯、將加成有平均2莫耳之環氧丙烷之聚丙二醇與加成有平均7莫耳之環氧乙烷之聚乙二醇加成至壬基苯酚而成之化合物的(甲基)丙烯酸酯即4-正壬基苯氧基七乙二醇二丙二醇(甲基)丙烯酸酯、將加成有平均1莫耳之環氧丙烷之聚丙二醇與加成有平均5莫耳之環氧乙烷之聚乙二醇加成至壬基苯酚而成之化合物的(甲基)丙烯酸酯即4-正壬基苯氧基五乙二醇單丙二醇(甲基)丙烯酸酯、將加成有平均8莫耳之環氧乙烷之聚乙二醇加成至壬基苯酚而成之化合物的丙烯酸酯即4-正壬基苯氧基八乙二醇(甲基)丙烯酸酯等。Specific examples of the other compounds of the first group include phenoxyhexaethylene glycol mono (meth) acrylate which is a (meth) acrylate of a compound in which p-phenyl group is added with polyethylene glycol, (Meth) acrylates of compounds obtained by adding polypropylene glycol with an average of 2 moles of propylene oxide and polyethylene glycol with an average of 7 moles of ethylene oxide to nonylphenol That is, 4-n-nonylphenoxy heptaethylene glycol dipropylene glycol (meth) acrylate, polypropylene glycol with an average of 1 mol of propylene oxide, and ethylene oxide with an average of 5 mols The (meth) acrylate of a compound obtained by adding polyethylene glycol to nonylphenol is 4-n-nonylphenoxy pentaethylene glycol monopropylene glycol (meth) acrylate. The average addition is 8 Acrylic acid esters of compounds obtained by the addition of polyethylene glycol to nonylphenol by Mol are 4-n-nonylphenoxy octaethylene glycol (meth) acrylate and the like.

作為第2群之其他化合物,具體而言例如可列舉:四乙二醇二(甲基)丙烯酸酯、五乙二醇二(甲基)丙烯酸酯、六乙二醇二(甲基)丙烯酸酯、七乙二醇二(甲基)丙烯酸酯、八乙二醇二(甲基)丙烯酸酯、九乙二醇二(甲基)丙烯酸酯、十乙二醇二(甲基)丙烯酸酯、於12莫耳之環氧乙烷鏈之兩末端具有(甲基)丙烯醯基之化合物等聚乙二醇(甲基)丙烯酸酯;聚丙二醇二(甲基)丙烯酸酯;聚丁二醇二(甲基)丙烯酸酯等。作為於化合物中包含環氧乙烷基與環氧丙烷基之聚環氧烷二(甲基)丙烯酸酯化合物,例如可列舉:對加成有平均12莫耳之環氧丙烷之聚丙二醇進而於兩末端分別加成平均3莫耳之環氧乙烷而成之二醇的二甲基丙烯酸酯、對加成有平均18莫耳之環氧丙烷之聚丙二醇進而於兩末端分別加成平均15莫耳之環氧乙烷而成之二醇的二甲基丙烯酸酯等,
除此以外,可列舉於對雙酚A加成環氧烷而成之聚伸烷基二醇之兩末端具有乙烯性雙鍵之化合物等。
Specific examples of the other compounds in the second group include tetraethylene glycol di (meth) acrylate, pentaethylene glycol di (meth) acrylate, and hexaethylene glycol di (meth) acrylate. , Heptaethylene glycol di (meth) acrylate, octaethylene glycol di (meth) acrylate, nonaethylene glycol di (meth) acrylate, decaethylene glycol di (meth) acrylate, in Polyethylene glycol (meth) acrylates such as compounds having a (meth) acrylfluorenyl group at both ends of a 12 mol ethylene oxide chain; polypropylene glycol di (meth) acrylate; polybutylene glycol di ( (Meth) acrylates and the like. Examples of the polyalkylene oxide di (meth) acrylate compound containing an ethylene oxide group and a propylene oxide group in the compound include polypropylene glycol to which an average amount of 12 mol of propylene oxide is added, and further Dimethacrylates of glycols with an average of 3 moles of ethylene oxide added at both ends, polypropylene glycols with an average of 18 moles of propylene oxide added at both ends and an average of 15 at both ends Diethylene glycol dimethacrylate of ethylene oxide, etc.
Other examples include compounds having an ethylenic double bond at both ends of a polyalkylene glycol obtained by adding alkylene oxide to bisphenol A.

作為上述第2群之化合物中之將雙酚A改性而成之化合物,就解像性及密接性之觀點而言,較佳為使用於對雙酚A加成環氧烷而成之聚伸烷基二醇之兩末端具有乙烯性雙鍵之化合物。該化合物中之乙烯性雙鍵較佳為以含有於(甲基)丙烯醯基之形式含有於該化合物中。Among the compounds of the second group, the compound modified with bisphenol A is preferably used for a polymer obtained by adding alkylene oxide to bisphenol A from the viewpoint of resolvability and adhesion. A compound having an ethylenic double bond at both ends of the alkylene glycol. The ethylenic double bond in the compound is preferably contained in the compound as a (meth) acrylfluorenyl group.

為了對雙酚A加成環氧烷而進行改性,例如已知有:環氧乙烷改性、環氧丙烷改性、環氧丁烷改性、環氧戊烷改性、環氧己烷改性等。較佳為於對雙酚A加成環氧乙烷而成之聚伸烷基二醇之兩末端具有(甲基)丙烯醯基之化合物。For modification of bisphenol A by addition of alkylene oxide, for example, ethylene oxide modification, propylene oxide modification, butylene oxide modification, pentylene oxide modification, and epoxy resin are known. Alkyl modification, etc. A compound having a (meth) acrylfluorenyl group at both ends of a polyalkylene glycol obtained by adding ethylene oxide to bisphenol A is preferred.

作為此種化合物,例如可列舉:2,2-雙(4-((甲基)丙烯醯氧基二乙氧基)苯基)丙烷(例如新中村化學工業(股)製造之NK ESTER BPE-200)、2,2-雙(4-((甲基)丙烯醯氧基三乙氧基)苯基)丙烷、2,2-雙(4-((甲基)丙烯醯氧基四乙氧基)苯基)丙烷、2,2-雙(4-((甲基)丙烯醯氧基五乙氧基)苯基)丙烷(例如新中村化學工業(股)製造之NK ESTER BPE-500)等。進而,如對雙酚A之兩末端分別加成平均2莫耳之環氧丙烷與平均6莫耳之環氧乙烷而成之聚伸烷基二醇的二(甲基)丙烯酸酯或對雙酚A之兩末端分別加成平均2莫耳之環氧丙烷與平均15莫耳之環氧乙烷而成之聚伸烷基二醇的二(甲基)丙烯酸酯等般,進行了環氧乙烷改性及環氧丙烷改性之化合物亦較佳。就提高解像性、密接性及柔軟性之觀點而言,藉由對雙酚A進行環氧烷改性而在兩末端具有(甲基)丙烯醯基之化合物中的環氧乙烷、環氧丙烷之莫耳數較佳為1莫耳以上60莫耳以下,更佳為4莫耳以上40莫耳以下,進而較佳為5莫耳以上20莫耳以下。Examples of such a compound include 2,2-bis (4-((meth) acryloxyoxyethoxy) phenyl) propane (for example, NK ESTER BPE- manufactured by Shin Nakamura Chemical Industry Co., Ltd.) 200), 2,2-bis (4-((meth) propenylethoxytriethoxy) phenyl) propane, 2,2-bis (4-((meth) propenyloxyethoxytetraethoxy) ) Phenyl) propane, 2,2-bis (4-((meth) acryloxypentaethoxy) phenyl) propane (e.g. NK ESTER BPE-500 manufactured by Shin Nakamura Chemical Industry Co., Ltd.) Wait. Furthermore, for example, a poly (alkyl) glycol di (meth) acrylate or poly (alkyl) glycol obtained by adding an average of 2 moles of propylene oxide and an average of 6 moles of ethylene oxide to both ends of bisphenol A. The bisphenol A is bis (meth) acrylate of polyalkylene glycol which is an average of 2 moles of propylene oxide and 15 moles of ethylene oxide. Ethylene oxide modified and propylene oxide modified compounds are also preferred. From the viewpoint of improving resolution, adhesion, and flexibility, ethylene oxide and ring in compounds having a (meth) acrylfluorenyl group at both ends are modified by alkylene oxide modification of bisphenol A. The molar number of oxypropane is preferably 1 mol to 60 mol, more preferably 4 mol to 40 mol, and still more preferably 5 mol to 20 mol.

上述第3群之化合物係藉由對如下之醇進行(甲基)丙烯酸酯化而獲得,該醇係對分子內具有3莫耳以上之可加成環氧烷基之基的中心骨架,加成伸乙氧基、伸丙氧基、伸丁氧基等伸烷氧基而獲得者。作為可成為中心骨架之化合物,例如可列舉:甘油、三羥甲基丙烷、季戊四醇、二季戊四醇、異氰尿酸酯環等。The compound of the third group is obtained by (meth) acrylation of an alcohol having a central skeleton having 3 mol or more of an alkylene group capable of adding an alkylene oxide group in the molecule. Obtained as alkoxy, such as ethoxy, propoxy, butoxy. Examples of compounds that can serve as a central skeleton include glycerol, trimethylolpropane, pentaerythritol, dipentaerythritol, and an isocyanurate ring.

更具體而言,例如可列舉:三羥甲基丙烷之環氧乙烷(EO) 3莫耳改性三丙烯酸酯、三羥甲基丙烷之EO 6莫耳改性三丙烯酸酯、三羥甲基丙烷之EO 9莫耳改性三丙烯酸酯、三羥甲基丙烷之EO 12莫耳改性三丙烯酸酯等。作為此種化合物,例如可列舉:甘油之EO 3莫耳改性三丙烯酸酯(例如新中村化學工業(股)製造之A-GLY-3E)、甘油之EO 9莫耳改性三丙烯酸酯(例如新中村化學工業(股)製造之A-GLY-9E)、甘油之EO 6莫耳及環氧丙烷(PO) 6莫耳改性三丙烯酸酯(A-GLY-0606PE)、甘油之EO 9莫耳PO 9莫耳改性三丙烯酸酯(A-GLY-0909PE)等。進而可列舉:季戊四醇之4 EO改性四丙烯酸酯(例如Sartomer Japan(股)公司製造之SR-494)、季戊四醇之35 EO改性四丙烯酸酯(例如新中村化學工業(股)公司製造之NK ESTER ATM-35E)等。More specifically, for example, trimethylolpropane ethylene oxide (EO) 3 mole modified triacrylate, trimethylolpropane EO 6 mole modified triacrylate, trimethylol EO 9 mol modified triacrylate of propyl propane, EO 12 mol modified triacrylate of trimethylolpropane and the like. Examples of such compounds include EO 3 mol modified triacrylate of glycerol (for example, A-GLY-3E manufactured by Shin Nakamura Chemical Industry Co., Ltd.), and EO 9 mol modified triacrylate of glycerol ( For example, A-GLY-9E manufactured by Shin Nakamura Chemical Industry Co., Ltd., EO 6 mole of glycerol and propylene oxide (PO) 6 mole modified triacrylate (A-GLY-0606PE), and EO of glycerol 9 Moore PO 9 Moire modified triacrylate (A-GLY-0909PE), etc. Further examples are: 4 EO modified tetraacrylate of pentaerythritol (for example, SR-494 manufactured by Sartomer Japan), and 35 EO modified tetraacrylate of pentaerythritol (for example, NK manufactured by Shin Nakamura Chemical Industry Co., Ltd.) ESTER ATM-35E) and so on.

作為具有乙烯性雙鍵之化合物,亦可列舉具有乙烯性雙鍵之異氰尿酸酯化合物。作為此種化合物之具體例,例如可列舉:乙氧化異三聚氰酸三(甲基)丙烯酸酯、ε-己內酯改性三(2-(甲基)丙烯醯氧基乙基)異氰尿酸酯、異氰尿酸三烯丙酯、(EO)改性異氰尿酸酯衍生三(甲基)丙烯酸酯(環氧乙烷平均27莫耳加成物)等。
此種化合物可使用市售品,例如可列舉:UA-7100、A-9300-1CL(以上由新中村化學工業公司製造);ARONIX M-327(東亞合成公司製造)等。
Examples of the compound having an ethylenic double bond include an isocyanurate compound having an ethylenic double bond. Specific examples of such compounds include, for example, ethoxylated isotricyanic acid tri (meth) acrylate, ε-caprolactone-modified tris (2- (meth) propenyloxyethyl) iso Cyanurate, triallyl isocyanurate, (EO) -modified isocyanurate-derived tris (meth) acrylate (ethylene oxide average 27 mol adduct), etc.
Commercially available such compounds can be used, and examples include UA-7100, A-9300-1CL (above manufactured by Shin Nakamura Chemical Industry Co., Ltd.); ARONIX M-327 (manufactured by Toa Kasei Corporation), and the like.

作為具有胺基甲酸酯鍵與乙烯性雙鍵之化合物,例如可列舉:六亞甲基二異氰酸酯、甲苯二異氰酸酯、或二異氰酸酯化合物(例如2,2,4-三甲基六亞甲基二異氰酸酯)與一分子中具有羥基與(甲基)丙烯酸基之化合物(例如丙烯酸2-羥丙酯、低聚丙二醇單甲基丙烯酸酯)之胺基甲酸酯化合物。具體而言為六亞甲基二異氰酸酯與低聚丙二醇單甲基丙烯酸酯(日本油脂(股)製造之Blemmer PP1000)之反應物。Examples of the compound having a urethane bond and an ethylenic double bond include hexamethylene diisocyanate, toluene diisocyanate, or a diisocyanate compound (for example, 2,2,4-trimethylhexamethylene) Diisocyanate) and a urethane compound of a compound having a hydroxyl group and a (meth) acrylic group in one molecule (for example, 2-hydroxypropyl acrylate, propylene glycol monomethacrylate). Specifically, it is a reaction product of hexamethylene diisocyanate and oligopropylene glycol monomethacrylate (Blemmer PP1000 manufactured by Nippon Oil & Fat Co., Ltd.).

作為具有鄰苯二甲酸結構與乙烯性雙鍵之化合物,例如可列舉:γ-氯-β-羥丙基-β'-(甲基)丙烯醯氧基乙基-鄰苯二甲酸酯、β-羥烷基-β'-(甲基)丙烯醯氧基烷基-鄰苯二甲酸酯等。Examples of the compound having a phthalic acid structure and an ethylenic double bond include γ-chloro-β-hydroxypropyl-β '-(meth) acryloxyethyl-phthalate, β-hydroxyalkyl-β '-(meth) acryloxyalkyl-phthalate and the like.

另外,作為具有乙烯性雙鍵之化合物,亦可包含三環癸烷二(甲基)丙烯酸酯或2,2-雙{4-(甲基丙烯醯氧基五乙氧基)環己基}丙烷等。In addition, as the compound having an ethylenic double bond, tricyclodecane di (meth) acrylate or 2,2-bis {4- (methacryloxypentylethoxy) cyclohexyl} propane may be included. Wait.

於上述具有兩個以上乙烯性雙鍵之化合物具有雙酚A結構與兩個以上乙烯性雙鍵之組合之情形時,於可提高交聯密度、疏水性、反應性,且可縮小最小獨立細線寬之差之方面而言更佳。特佳為上述包含一個以上硫醇基之化合物為季戊四醇四(3-巰基丁酸)酯或包含其,且上述具有兩個以上乙烯性雙鍵之化合物為具有雙酚A結構與兩個以上乙烯性雙鍵之組合之化合物或包含其。In the case where the compound having two or more ethylenic double bonds has a combination of a bisphenol A structure and two or more ethylenic double bonds, the crosslinking density, hydrophobicity, and reactivity can be improved, and the minimum independent thin line can be reduced. It is better in terms of wide difference. It is particularly preferable that the compound containing one or more thiol groups is pentaerythritol tetrakis (3-mercaptobutyrate) or a compound containing the same, and the compound having two or more ethylenic double bonds is a compound having a bisphenol A structure and two or more ethylenes. Compounds with a combination of sexual double bonds may include them.

至於感光性樹脂組合物中之(B)與光起始劑具有反應性之化合物之含量,就硬化膜良好之物性、解像度、密接性之觀點而言,較佳為10質量%以上,更佳為15質量%以上,進而較佳為30質量%以上,就感光性樹脂組合物之其他成分(尤其是(A)鹼溶性高分子)之適當量之調配之觀點而言,較佳為90質量%以下,更佳為80質量%以下,進而較佳為75質量%以下。The content of the compound (B) in the photosensitive resin composition that is reactive with the photoinitiator is preferably 10% by mass or more from the viewpoint of good physical properties, resolution, and adhesion of the cured film. It is 15% by mass or more, and more preferably 30% by mass or more. From the viewpoint of blending appropriate amounts of other components of the photosensitive resin composition (especially (A) alkali-soluble polymer), 90% is preferred. % Or less, more preferably 80% by mass or less, and still more preferably 75% by mass or less.

(C)光起始劑
(C)光起始劑係藉由光使單體聚合之化合物。感光性樹脂組合物可包含本技術領域中普遍知曉之化合物作為(C)光起始劑。例如,作為(C)光起始劑,可列舉:醌類、芳香族酮類、苯乙酮類、醯基氧化膦類、安息香或安息香醚類、二烷基縮酮類、9-氧硫類、二烷基胺基苯甲酸酯類、肟酯類、吖啶類(例如9-苯基吖啶、雙吖啶基庚烷、9-(對甲基苯基)吖啶、9-(間甲基苯基)吖啶於感度、解像性及密接性之方面較佳)、六芳基聯咪唑、吡唑啉化合物、香豆素化合物(例如7-二乙胺基-4-甲基香豆素於感度、解像性及密接性之方面較佳)、N-芳基胺基酸或其酯化合物(例如N-苯基甘胺酸於感度、解像性及密接性之方面而言較佳)及鹵素化合物(例如三溴甲基苯基碸)等。該等可單獨使用1種或組合使用2種以上。另外,亦可使用2,2-二甲氧基-1,2-二苯乙烷-1-酮、2-甲基-1-(4-甲基噻吩基)-2-嗎啉基丙烷-1-酮、2,4,6-三甲基苯甲醯基-二苯基-氧化膦、三苯基氧化膦等。
(C) Photoinitiator
(C) A photoinitiator is a compound which polymerizes a monomer by light. The photosensitive resin composition may contain a compound generally known in the art as a (C) photoinitiator. Examples of the (C) photoinitiator include quinones, aromatic ketones, acetophenones, fluorenylphosphine oxides, benzoin or benzoin ethers, dialkyl ketals, and 9-oxysulfur. Type, dialkylaminobenzoates, oxime esters, acridines (e.g. 9-phenylacridine, bisacridylheptane, 9- (p-methylphenyl) acridine, 9- ( M-methylphenyl) acridine is preferred in terms of sensitivity, resolution and adhesion), hexaarylbiimidazole, pyrazoline compounds, coumarin compounds (e.g. 7-diethylamino-4-methyl Base coumarin is better in terms of sensitivity, resolution and adhesion), N-arylamino acid or its ester compound (e.g. N-phenylglycine in terms of sensitivity, resolution and adhesion It is preferred) and halogen compounds (such as tribromomethylphenylphosphonium). These can be used individually by 1 type or in combination of 2 or more types. Alternatively, 2,2-dimethoxy-1,2-diphenylethane-1-one, 2-methyl-1- (4-methylthienyl) -2-morpholinylpropane- 1-ketone, 2,4,6-trimethylbenzylidene-diphenyl-phosphine oxide, triphenylphosphine oxide, etc.

作為芳香族酮類,例如可列舉:二苯甲酮、米其勒酮[4,4'-雙(二甲胺基)二苯甲酮]、4,4'-雙(二乙胺基)二苯甲酮、4-甲氧基-4'-二甲胺基二苯甲酮、1-羥基-環己基-苯基酮。該等可單獨使用1種或組合使用2種以上。該等之中,就密接性之觀點而言,較佳為4,4'-雙(二乙胺基)二苯甲酮、1-羥基-環己基-苯基酮。進而就透過率之觀點而言,感光性樹脂組合物中之芳香族酮類之含量較佳為0.01質量%~0.5質量%,進而較佳為0.02質量%~0.3質量%之範圍內。Examples of the aromatic ketones include benzophenone, Michelin [4,4'-bis (dimethylamino) benzophenone], and 4,4'-bis (diethylamino). Benzophenone, 4-methoxy-4'-dimethylaminobenzophenone, 1-hydroxy-cyclohexyl-phenylketone. These can be used individually by 1 type or in combination of 2 or more types. Among these, 4,4'-bis (diethylamino) benzophenone and 1-hydroxy-cyclohexyl-phenyl ketone are preferable from a viewpoint of adhesiveness. Furthermore, from the viewpoint of transmittance, the content of the aromatic ketones in the photosensitive resin composition is preferably in a range of 0.01% by mass to 0.5% by mass, and more preferably in a range of 0.02% by mass to 0.3% by mass.

作為六芳基聯咪唑之例,可列舉:2-(鄰氯苯基)-4,5-二苯基聯咪唑、2,2',5-三(鄰氯苯基)-4-(3,4-二甲氧基苯基)-4',5'-二苯基聯咪唑、2,4-雙(鄰氯苯基)-5-(3,4-二甲氧基苯基)-二苯基聯咪唑、2,4,5-三(鄰氯苯基)-二苯基聯咪唑、2-(鄰氯苯基)-雙-4,5-(3,4-二甲氧基苯基)-聯咪唑、2,2'-雙(2-氟苯基)-4,4',5,5'-四(3-甲氧基苯基)-聯咪唑、2,2'-雙(2,3-二氟甲基苯基)-4,4',5,5'-四(3-甲氧基苯基)-聯咪唑、2,2'-雙(2,4-二氟苯基)-4,4',5,5'-四(3-甲氧基苯基)-聯咪唑、2,2'-雙(2,5-二氟苯基)-4,4',5,5'-四(3-甲氧基苯基)-聯咪唑、2,2'-雙(2,6-二氟苯基)-4,4',5,5'-四(3-甲氧基苯基)-聯咪唑、2,2'-雙(2,3,4-三氟苯基)-4,4',5,5'-四(3-甲氧基苯基)-聯咪唑、2,2'-雙(2,3,5-三氟苯基)-4,4',5,5'-四(3-甲氧基苯基)-聯咪唑、2,2'-雙(2,3,6-三氟苯基)-4,4',5,5'-四(3-甲氧基苯基)-聯咪唑、2,2'-雙(2,4,5-三氟苯基)-4,4',5,5'-四(3-甲氧基苯基)-聯咪唑、2,2'-雙(2,4,6-三氟苯基)-4,4',5,5'-四(3-甲氧基苯基)-聯咪唑、2,2'-雙(2,3,4,5-四氟苯基)-4,4',5,5'-四(3-甲氧基苯基)-聯咪唑、2,2'-雙(2,3,4,6-四氟苯基)-4,4',5,5'-四(3-甲氧基苯基)-聯咪唑及2,2'-雙(2,3,4,5,6-五氟苯基)-4,4',5,5'-四(3-甲氧基苯基)-聯咪唑等,該等可單獨使用1種或組合使用2種以上。就高感度、解像性及密接性之觀點而言,較佳為2-(鄰氯苯基)-4,5-二苯咪唑二聚物。Examples of hexaarylbiimidazole include 2- (o-chlorophenyl) -4,5-diphenylbiimidazole, 2,2 ', 5-tris (o-chlorophenyl) -4- (3 , 4-dimethoxyphenyl) -4 ', 5'-diphenylbiimidazole, 2,4-bis (o-chlorophenyl) -5- (3,4-dimethoxyphenyl)- Diphenylbiimidazole, 2,4,5-tris (o-chlorophenyl) -diphenylbiimidazole, 2- (o-chlorophenyl) -bis-4,5- (3,4-dimethoxy (Phenyl) -biimidazole, 2,2'-bis (2-fluorophenyl) -4,4 ', 5,5'-tetra (3-methoxyphenyl) -biimidazole, 2,2'- Bis (2,3-difluoromethylphenyl) -4,4 ', 5,5'-tetra (3-methoxyphenyl) -biimidazole, 2,2'-bis (2,4-bis (Fluorophenyl) -4,4 ', 5,5'-tetra (3-methoxyphenyl) -biimidazole, 2,2'-bis (2,5-difluorophenyl) -4,4' , 5,5'-tetra (3-methoxyphenyl) -biimidazole, 2,2'-bis (2,6-difluorophenyl) -4,4 ', 5,5'-tetra (3 -Methoxyphenyl) -biimidazole, 2,2'-bis (2,3,4-trifluorophenyl) -4,4 ', 5,5'-tetrakis (3-methoxyphenyl) -Biimidazole, 2,2'-bis (2,3,5-trifluorophenyl) -4,4 ', 5,5'-tetrakis (3-methoxyphenyl) -biimidazole, 2,2 '-Bis (2,3,6-trifluorophenyl) -4,4', 5,5'-tetra (3-methoxyphenyl) -biimidazole, 2,2'-bis (2,4 , 5-trifluorophenyl) -4,4 ', 5,5'-tetrakis (3-methoxyphenyl) -biimidazole, 2,2'-bis (2,4,6-trifluorophenyl) -4,4 ', 5,5'-tetra (3-methoxyphenyl) -biimidazole, 2,2'-bis ( 2,3,4,5-tetrafluorophenyl) -4,4 ', 5,5'-tetra (3-methoxyphenyl) -biimidazole, 2,2'-bis (2,3,4 , 6-tetrafluorophenyl) -4,4 ', 5,5'-tetra (3-methoxyphenyl) -biimidazole and 2,2'-bis (2,3,4,5,6- Pentafluorophenyl) -4,4 ', 5,5'-tetrakis (3-methoxyphenyl) -biimidazole, etc. These can be used alone or in combination of two or more. From the viewpoints of high sensitivity, resolvability, and adhesion, 2- (o-chlorophenyl) -4,5-dibenzimidazole dimer is preferred.

就感光性樹脂組合物層之剝離特性、感度、解像性或密接性之觀點而言,較佳為感光性樹脂組合物亦包含1種或2種以上之吡唑啉化合物作為(C)光起始劑。From the standpoint of the peeling characteristics, sensitivity, resolution, or adhesion of the photosensitive resin composition layer, it is preferred that the photosensitive resin composition also contains one or two or more kinds of pyrazoline compounds as the (C) light. Initiator.

作為吡唑啉化合物,例如就上述觀點而言較佳為1-苯基-3-(4-第三丁基苯乙烯基)-5-(4-第三丁基苯基)-吡唑啉、1-(4-(苯并㗁唑-2-基)苯基)-3-(4-第三丁基苯乙烯基)-5-(4-第三丁基苯基)-吡唑啉、1-苯基-3-(4-聯苯基)-5-(4-第三丁基苯基)-吡唑啉、1-苯基-3-(4-聯苯基)-5-(4-第三辛基-苯基)-吡唑啉、1-苯基-3-(4-異丙基苯乙烯基)-5-(4-異丙苯基)-吡唑啉、1-苯基-3-(4-甲氧基苯乙烯基)-5-(4-甲氧基苯基)-吡唑啉、1-苯基-3-(3,5-二甲氧基苯乙烯基)-5-(3,5-二甲氧基苯基)-吡唑啉、1-苯基-3-(3,4-二甲氧基苯乙烯基)-5-(3,4-二甲氧基苯基)-吡唑啉、1-苯基-3-(2,6-二甲氧基苯乙烯基)-5-(2,6-二甲氧基苯基)-吡唑啉、1-苯基-3-(2,5-二甲氧基苯乙烯基)-5-(2,5-二甲氧基苯基)-吡唑啉、1-苯基-3-(2,3-二甲氧基苯乙烯基)-5-(2,3-二甲氧基苯基)-吡唑啉、1-苯基-3-(2,4-二甲氧基苯乙烯基)-5-(2,4-二甲氧基苯基)-吡唑啉等,更佳為1-苯基-3-(4-聯苯基)-5-(4-第三丁基苯基)-吡唑啉。As the pyrazoline compound, for example, 1-phenyl-3- (4-third butylstyryl) -5- (4-third butylphenyl) -pyrazoline is preferred from the viewpoints described above. 1- (4- (benzoxazol-2-yl) phenyl) -3- (4-third butylstyryl) -5- (4-third butylphenyl) -pyrazoline 1-phenyl-3- (4-biphenyl) -5- (4-third butylphenyl) -pyrazoline, 1-phenyl-3- (4-biphenyl) -5- (4-third octyl-phenyl) -pyrazoline, 1-phenyl-3- (4-isopropylstyryl) -5- (4-isopropylphenyl) -pyrazoline, 1 -Phenyl-3- (4-methoxystyryl) -5- (4-methoxyphenyl) -pyrazoline, 1-phenyl-3- (3,5-dimethoxybenzene Vinyl) -5- (3,5-dimethoxyphenyl) -pyrazoline, 1-phenyl-3- (3,4-dimethoxystyryl) -5- (3,4 -Dimethoxyphenyl) -pyrazoline, 1-phenyl-3- (2,6-dimethoxystyryl) -5- (2,6-dimethoxyphenyl) -pyridine Oxazoline, 1-phenyl-3- (2,5-dimethoxystyryl) -5- (2,5-dimethoxyphenyl) -pyrazoline, 1-phenyl-3- (2,3-dimethoxystyryl) -5- (2,3-dimethoxyphenyl) -pyrazoline, 1-phenyl-3- (2,4-dimethoxybenzene Vinyl) -5- (2,4-dimethoxyphenyl) -pyrazoline, etc., more preferably It is 1-phenyl-3- (4-biphenyl) -5- (4-third butylphenyl) -pyrazoline.

作為N-芳基胺基酸之酯化合物,例如可列舉:N-苯基甘胺酸之甲酯、N-苯基甘胺酸之乙酯、N-苯基甘胺酸之正丙酯、N-苯基甘胺酸之異丙酯、N-苯基甘胺酸之1-丁酯、N-苯基甘胺酸之2-丁酯、N-苯基甘胺酸之第三丁酯、N-苯基甘胺酸之戊酯、N-苯基甘胺酸之己酯、N-苯基甘胺酸之戊酯、N-苯基甘胺酸之辛酯等。Examples of the ester compound of N-arylamino acid include methyl ester of N-phenylglycine, ethyl ester of N-phenylglycine, n-propyl ester of N-phenylglycine, Isopropyl ester of N-phenylglycine, 1-butyl ester of N-phenylglycine, 2-butyl ester of N-phenylglycine, third butyl ester of N-phenylglycine , Pentyl ester of N-phenylglycine, hexyl ester of N-phenylglycine, pentyl ester of N-phenylglycine, octyl ester of N-phenylglycine, and the like.

作為鹵素化合物,例如可列舉:溴戊烷、溴異戊烷、1,2-二溴-2-甲基丙烷、1,2-二溴乙烷、二苯溴代甲烷、苄基溴、二溴甲烷、三溴甲基苯基碸、四溴化碳、磷酸三(2,3-二溴丙)酯、三氯乙醯胺、碘戊烷、碘異丁烷、1,1,1-三氯-2,2-雙(對氯苯基)乙烷、氯化三化合物、二烯丙基錪化合物等,尤其是三溴甲基苯基碸較佳。Examples of the halogen compound include bromopentane, bromoisopentane, 1,2-dibromo-2-methylpropane, 1,2-dibromoethane, diphenylbromomethane, benzyl bromide, and diphenyl bromide. Methyl bromide, tribromomethylphenylphosphonium, carbon tetrabromide, tris (2,3-dibromopropyl) phosphate, trichloroacetamide, iodopentane, iodoisobutane, 1,1,1-tris Chloro-2,2-bis (p-chlorophenyl) ethane, trichloride chloride, diallyl sulfonium compound, etc., especially tribromomethylphenylsulfonium is preferred.

<光陽離子聚合性起始劑>
亦較佳為包含光陽離子聚合性起始劑。光聚合起始劑係藉由光照射或加熱而產生強酸、藉由該強酸使雜原子質子化而開始聚合反應者,可包含普遍知曉之化合物。
<Photocationic polymerizable initiator>
It is also preferable to include a photocationic polymerizable initiator. The photopolymerization initiator is one which generates a strong acid by light irradiation or heating, and protonates a heteroatom by the strong acid to start a polymerization reaction, and may include a generally known compound.

<光陽離子聚合性起始劑例>
作為光陽離子聚合性起始劑,例如可列舉芳基鋶鹽、芳基錪鹽,可列舉陰離子部分包含BF4 - 、PF6 - 、SbF6 - 之鹽化合物。
<Example of photocationic polymerizable initiator>
A cationic photopolymerizable initiator, and examples thereof include aryl sulfonium salts, aryl iodonium salt include anionic moiety comprising BF 4 -, PF 6 -, SbF 6 - salt of the compound.

至於感光性樹脂組合物中之(C)光起始劑之量,就使感光性樹脂組合物之硬化良好進行之觀點而言,較佳為0.01質量%以上,更佳為0.05質量%以上,進而較佳為0.1質量%以上,就良好地控制感光性樹脂組合物之硬化之觀點而言,較佳為30質量%以下,更佳為20質量%以下,進而較佳為15質量%以下。The amount of the (C) photoinitiator in the photosensitive resin composition is preferably 0.01% by mass or more, more preferably 0.05% by mass or more, from the viewpoint of hardening the photosensitive resin composition. It is further preferably 0.1% by mass or more, and from the viewpoint of controlling the curing of the photosensitive resin composition, it is preferably 30% by mass or less, more preferably 20% by mass or less, and still more preferably 15% by mass or less.

(D)添加劑
感光性樹脂組合物可視需要包含染料、塑化劑、抗氧化劑、穩定劑等添加劑。例如可使用日本專利特開2013-156369號公報中所列舉之添加劑。
(D) Additive The photosensitive resin composition may contain additives such as a dye, a plasticizer, an antioxidant, and a stabilizer, as necessary. For example, additives listed in Japanese Patent Laid-Open No. 2013-156369 can be used.

就著色性、色相穩定性及曝光對比度之觀點而言,較佳為感光性樹脂組合物包含三(4-二甲胺基苯基)甲烷[隱色結晶紫]及/或鑽石綠(保土谷化學股份有限公司製造之Aizen(註冊商標) DIAMOND GREEN GH)作為染料。From the viewpoints of colorability, hue stability, and exposure contrast, the photosensitive resin composition preferably contains tris (4-dimethylaminophenyl) methane [crypto crystal violet] and / or diamond green (Hodogaya Aizen (registered trademark) (DIAMOND GREEN GH) manufactured by Chemical Co., Ltd. is used as a dye.

於本實施形態中,感光性樹脂組合物中之染料之含量較佳為0.001質量%~3質量%,更佳為0.01質量%~2質量%。至於染料之含量,就獲得良好之著色性之觀點而言較佳為0.001質量%以上,就維持感光性樹脂組合物層之感度之觀點而言較佳為3質量%以下。In this embodiment, the content of the dye in the photosensitive resin composition is preferably 0.001% by mass to 3% by mass, and more preferably 0.01% by mass to 2% by mass. The content of the dye is preferably 0.001% by mass or more from the viewpoint of obtaining good coloring properties, and preferably 3% by mass or less from the viewpoint of maintaining the sensitivity of the photosensitive resin composition layer.

就感光性樹脂組合物之熱穩定性或保存穩定性之觀點而言,較佳為感光性樹脂組合物包含選自由以下化合物所組成之群中之至少一個作為穩定劑:自由基聚合抑制劑,例如:亞硝基苯基羥胺鋁鹽、對甲氧基苯酚、4-第三丁基兒茶酚、4-乙基-6-第三丁基苯酚等;苯并三唑類,例如:1-(N,N-雙(2-乙基己基)胺基甲基)-1,2,3-苯并三唑、2,2'-(((甲基-1H-苯并三唑-1-基)甲基)亞胺基)雙乙醇、1-(2-二正丁基胺基甲基)-5-羧基苯并三唑與1-(2-二正丁基胺基甲基)-6-羧基苯并三唑之1:1混合物等;羧基苯并三唑類,例如:4-羧基-1,2,3-苯并三唑、5-羧基-1,2,3-苯并三唑、6-羧基-1,2,3-苯并三唑等;及具有縮水甘油基之化合物,例如:雙酚A二縮水甘油醚、氫化雙酚A二縮水甘油醚、新戊二醇二縮水甘油醚等。另外,亦可包含2-巰基苯并咪唑、1H-四唑、1-甲基-5-巰基-1H-四唑、2-胺基-5-巰基-1,3,4-噻二唑、3-胺基-5-巰基-1,2,4-三唑、3-巰基-1,2,4-三唑、3-巰基三唑、4,5-二苯基-1,3-二唑-2-基、5-胺基-1H-四唑等。From the viewpoint of thermal stability or storage stability of the photosensitive resin composition, it is preferable that the photosensitive resin composition contains, as a stabilizer, at least one selected from the group consisting of a radical polymerization inhibitor, For example: nitrosophenylhydroxylamine aluminum salt, p-methoxyphenol, 4-tert-butylcatechol, 4-ethyl-6-tert-butylphenol, etc .; benzotriazoles, for example: 1 -(N, N-bis (2-ethylhexyl) aminomethyl) -1,2,3-benzotriazole, 2,2 '-(((methyl-1H-benzotriazole-1 -Yl) methyl) imino) diethanol, 1- (2-di-n-butylaminomethyl) -5-carboxybenzotriazole and 1- (2-di-n-butylaminomethyl) 1: 1 mixture of 6-carboxybenzotriazole; etc .; carboxybenzotriazoles, for example: 4-carboxy-1,2,3-benzotriazole, 5-carboxy-1,2,3-benzene Benzotriazole, 6-carboxy-1,2,3-benzotriazole, etc .; and compounds having glycidyl groups, such as bisphenol A diglycidyl ether, hydrogenated bisphenol A diglycidyl ether, neopentyl Glycidyl ether and the like. It may also contain 2-mercaptobenzimidazole, 1H-tetrazole, 1-methyl-5-mercapto-1H-tetrazole, 2-amino-5-mercapto-1,3,4-thiadiazole, 3-amino-5-mercapto-1,2,4-triazole, 3-mercapto-1,2,4-triazole, 3-mercaptotriazole, 4,5-diphenyl-1,3-di Azole-2-yl, 5-amino-1H-tetrazole and the like.

於本實施形態中,感光性樹脂組合物中之所有穩定劑之總含量較佳為0.001質量%~3質量%,更佳為0.01質量%~1質量%,進而較佳為0.05質量%~0.7質量%之範圍內。至於穩定劑之總含量,就對感光性樹脂組合物賦予良好之保存穩定性之觀點而言較佳為0.001質量%以上,就維持感光性樹脂組合物層之感度之觀點而言較佳為3質量%以下。In this embodiment, the total content of all stabilizers in the photosensitive resin composition is preferably 0.001% by mass to 3% by mass, more preferably 0.01% by mass to 1% by mass, and still more preferably 0.05% by mass to 0.7. Within the mass% range. The total content of the stabilizer is preferably 0.001% by mass or more from the viewpoint of imparting good storage stability to the photosensitive resin composition, and is preferably 3 from the viewpoint of maintaining the sensitivity of the photosensitive resin composition layer. Mass% or less.

上述說明之添加劑可單獨使用1種,或組合使用2種以上。The additives described above can be used alone or in combination of two or more.

於較佳之態樣中,感光性樹脂積層體於感光性樹脂組合物層之與支持膜側為相反側之面具備覆蓋膜。覆蓋膜之重要之特性係與感光性樹脂組合物層之密接力小於支持膜,可容易地剝離。作為覆蓋膜,例如較佳為聚乙烯膜、聚丙烯膜等。例如可使用日本專利特開昭59-202457號公報中記載之剝離性優異之膜。覆蓋膜之膜厚較佳為10 μm~100 μm,更佳為10 μm~50 μm。In a preferred aspect, the photosensitive resin laminate includes a cover film on a surface of the photosensitive resin composition layer that is opposite to the support film side. An important characteristic of the cover film is that the adhesion with the photosensitive resin composition layer is smaller than that of the support film, and it can be easily peeled off. As a cover film, a polyethylene film, a polypropylene film, etc. are preferable, for example. For example, a film having excellent peelability described in Japanese Patent Laid-Open No. 59-202457 can be used. The film thickness of the cover film is preferably 10 μm to 100 μm, and more preferably 10 μm to 50 μm.

於本實施形態中,感光性樹脂積層體中之感光性樹脂組合物層之厚度較佳為3 μm~100 μm,更佳為5 μm~60 μm。由於感光性樹脂組合物層之厚度越小則抗蝕劑圖案之解像性提高,另一方面,厚度越大則硬化膜之強度提高,因此可根據用途進行選擇。In this embodiment, the thickness of the photosensitive resin composition layer in the photosensitive resin laminate is preferably 3 μm to 100 μm, and more preferably 5 μm to 60 μm. The smaller the thickness of the photosensitive resin composition layer is, the higher the resolution of the resist pattern is. On the other hand, the larger the thickness is, the higher the strength of the cured film is. Therefore, it can be selected according to the application.

作為依序積層支持膜、感光性樹脂組合物層、及視需要積層覆蓋膜而製作感光性樹脂積層體之方法,可使用已知之方法。例如,製備包含感光性樹脂組合物與溶劑之調合液,其次使用棒式塗佈機或輥式塗佈機塗佈於支持膜上並使其乾燥,於支持膜上積層由感光性樹脂組合物調合液而形成的感光性樹脂組合物層。進而,視需要於感光性樹脂組合物層上積層覆蓋膜,藉此可製作感光性樹脂積層體。As a method for sequentially laminating a support film, a photosensitive resin composition layer, and a cover film as necessary to produce a photosensitive resin laminate, a known method can be used. For example, a blending solution containing a photosensitive resin composition and a solvent is prepared, followed by coating on a support film with a bar coater or a roll coater and drying it, and laminating the photosensitive resin composition on the support film. A photosensitive resin composition layer formed by preparing a liquid. Furthermore, when a cover film is laminated | stacked on the photosensitive resin composition layer as needed, a photosensitive resin laminated body can be manufactured.

<抗蝕劑圖案之製造方法> 本實施形態又提供包含如下步驟之抗蝕劑圖案之製造方法: 層壓步驟,將感光性樹脂積層體之感光性樹脂組合物層密接於基材上; 支持膜剝離步驟,將感光性樹脂積層體之支持膜剝離; 曝光步驟,對感光性樹脂積層體進行曝光;以及 顯像步驟,對曝光之感光性樹脂積層體進行顯像。<Manufacturing method of resist pattern> This embodiment further provides a manufacturing method of a resist pattern including the following steps: A laminating step, which is in contact with a photosensitive resin composition layer of a photosensitive resin laminated body on a substrate; support The film peeling step peels off the supporting film of the photosensitive resin laminate; the exposure step exposes the photosensitive resin laminate; and the developing step develops the exposed photosensitive resin laminate.

首先,於層壓步驟中,使用貼合機將感光性樹脂組合物層密接於基材上。具體而言,於感光性樹脂積層體具有保護層之情形時,將保護層剝離,其後藉由貼合機將感光性樹脂積層體之感光性樹脂組合物層加熱壓接於基材表面而進行層壓。作為基材之材料,例如可列舉:銅、不鏽鋼(SUS)、玻璃、氧化銦錫(ITO)等。基材之較佳例為銅箔積層板。First, in a laminating step, a photosensitive resin composition layer is closely adhered to a substrate using a laminator. Specifically, when the photosensitive resin laminated body has a protective layer, the protective layer is peeled off, and then the photosensitive resin composition layer of the photosensitive resin laminated body is heated and pressure-bonded to the surface of the substrate by a laminator. Laminate. Examples of the material of the substrate include copper, stainless steel (SUS), glass, and indium tin oxide (ITO). A preferred example of the substrate is a copper foil laminate.

於本實施形態中,感光性樹脂組合物層可僅層壓於基材表面之單面,或視需要層壓於兩面。層壓時之加熱溫度一般為40℃~160℃。又,藉由進行2次以上層壓時之加熱壓接,可使所獲得之抗蝕劑圖案對基材之密接性提高。於加熱壓接時,可使用具備雙聯輥之二段式貼合機,或藉由使基材與感光性樹脂積層體之積層物多次反覆通過輥而進行壓接。In this embodiment, the photosensitive resin composition layer may be laminated on only one side of the surface of the substrate, or may be laminated on both sides if necessary. The heating temperature during lamination is generally 40 ° C ~ 160 ° C. In addition, the heat-pressure bonding when laminating is performed twice or more can improve the adhesion of the obtained resist pattern to the substrate. When heating and crimping, a two-stage laminator equipped with a double roll can be used, or the laminate can be crimped by repeatedly passing the laminate of the substrate and the photosensitive resin laminate through the roll.

其次,於支持膜剝離步驟中,將感光性樹脂積層體之支持膜剝離。Next, in the support film peeling step, the support film of the photosensitive resin laminate is peeled.

其次,於曝光步驟中,使用曝光裝置對感光性樹脂組合物層進行曝光。典型而言,曝光步驟包括自感光性樹脂積層體之設置有支持膜之側進行曝光。典型而言,曝光裝置為
(a)曝光之光之峰值波長為350~370 nm之曝光裝置; (b)曝光之光之峰值波長為400~410 nm之曝光裝置; (c)曝光之光之峰值波長為360~380 nm與390~410 nm,且波長強度比為360~380 nm:390~410 nm=30:70之曝光裝置;及 (d)水銀短弧光燈 之任一種。於通過光罩進行曝光之情形時,曝光量由光源照度及曝光時間而決定,可使用光量計進行測定。於曝光步驟中,可進行直接成像曝光。於直接成像曝光中,並未使用光罩而而藉由直接繪圖裝置於基板上進行曝光。於描繪圖案受電腦控制之情形時,曝光量由曝光光源之照度及基板之移動速度決定。可通過透鏡投影光罩之圖像而進行曝光。
Next, in the exposure step, the photosensitive resin composition layer is exposed using an exposure device. Typically, the exposure step includes exposing from the side of the photosensitive resin laminated body on which the support film is provided. Typically, the exposure device is
(a) an exposure device with a peak wavelength of light of 350 to 370 nm; (b) an exposure device with a peak wavelength of light of 400 to 410 nm; (c) a peak wavelength of light of exposure to 360 to 380 nm And 390 ~ 410 nm, and an exposure device with a wavelength intensity ratio of 360 ~ 380 nm: 390 ~ 410 nm = 30: 70; and (d) any one of mercury short arc lamps. In the case of exposure through a photomask, the exposure amount is determined by the illuminance of the light source and the exposure time, and can be measured using a light meter. In the exposure step, direct imaging exposure can be performed. In the direct imaging exposure, the mask is used instead, and the substrate is exposed by a direct drawing device. When the drawing pattern is controlled by a computer, the exposure amount is determined by the illuminance of the exposure light source and the moving speed of the substrate. Exposure can be performed by projecting an image of the photomask through a lens.

其次,於顯像步驟中,使用顯像裝置藉由顯像液將曝光後之感光性樹脂組合物層中之未曝光部或曝光部除去。繼而,使用包含鹼性水溶液之顯像液,將未曝光部或曝光部顯像除去,經由水洗步驟、乾燥步驟而獲得抗蝕劑圖像。於上述水洗步驟中,可使用離子交換水或添加有鎂離子或者鈣離子之水。Next, in the developing step, an unexposed portion or an exposed portion in the exposed photosensitive resin composition layer is removed by a developing solution using a developing device. Then, using a developing solution containing an alkaline aqueous solution, the unexposed portion or the exposed portion is developed and removed, and a resist image is obtained through a water washing step and a drying step. In the above water washing step, ion-exchanged water or water to which magnesium ions or calcium ions are added may be used.

作為鹼性水溶液,較佳為Na2 CO3 、K2 CO3 等之水溶液。鹼性水溶液根據感光性樹脂組合物層之特性而選擇,通常使用0.2質量%~2質量%之濃度之Na2 CO3 水溶液。可於鹼性水溶液中可加入表面活性劑、消泡劑、用以促進顯像之少量有機溶劑等。顯像步驟中之顯像液之溫度較佳為於20℃~40℃之範圍內保持一定。The alkaline aqueous solution is preferably an aqueous solution of Na 2 CO 3 , K 2 CO 3 or the like. The alkaline aqueous solution is selected according to the characteristics of the photosensitive resin composition layer, and an aqueous Na 2 CO 3 solution having a concentration of 0.2% to 2% by mass is usually used. Surfactants, defoamers, small amounts of organic solvents used to promote development can be added to the alkaline aqueous solution. The temperature of the developing solution in the developing step is preferably kept constant within a range of 20 ° C to 40 ° C.

藉由上述步驟獲得抗蝕劑圖案,但亦可視所需進一步以100℃~300℃進行加熱步驟。藉由實施該加熱步驟,可提高抗蝕劑圖案之耐化學品性。於加熱步驟中,可使用利用熱風、紅外線或遠紅外線之方式的加熱爐。The resist pattern is obtained through the above steps, but a heating step may be further performed at 100 ° C to 300 ° C as necessary. By performing this heating step, the chemical resistance of the resist pattern can be improved. In the heating step, a heating furnace using hot air, infrared, or far infrared can be used.

<配線基板之製造方法> 本實施形態又提供包含配線形成步驟的配線基板之製造方法,該配線形成步驟係藉由上述抗蝕劑圖案之製造方法而製造具有抗蝕劑圖案之基板,其次對具有該抗蝕劑圖案之基板實施蝕刻或鍍覆,藉此於基板上形成配線。於配線形成步驟中,藉由具有比顯像液強之鹼性的水溶液將抗蝕劑圖案自基板剝離。<Manufacturing Method of Wiring Substrate> This embodiment further provides a manufacturing method of a wiring substrate including a wiring forming step. The wiring forming step is to manufacture a substrate having a resist pattern by the above-mentioned method for manufacturing a resist pattern. The substrate having the resist pattern is subjected to etching or plating to form wiring on the substrate. In the wiring formation step, the resist pattern is peeled from the substrate by an aqueous solution having an alkali stronger than the developing solution.

剝離用之鹼性水溶液(以下亦稱為「剝離液」)並無特別限制,通常使用2質量%~5質量%之濃度的NaOH或KOH水溶液或者有機胺系剝離液。可於剝離液中加入少量之水溶性溶劑。作為水溶性溶劑,例如可列舉醇等。剝離步驟中之剝離液之溫度較佳為40℃~70℃之範圍內。為了進行SAP(Semi Additive Process,半加成法),較佳為配線板之製造方法進而包含自獲得之配線板除去鈀之步驟。
[實施例]
There is no particular limitation on the alkaline aqueous solution for peeling (hereinafter also referred to as "peeling solution"). Generally, a 2 to 5 mass% NaOH or KOH aqueous solution or an organic amine-based peeling solution is used. A small amount of water-soluble solvent can be added to the stripping solution. Examples of the water-soluble solvent include alcohols. The temperature of the peeling liquid in the peeling step is preferably within a range of 40 ° C to 70 ° C. In order to perform a SAP (Semi Additive Process), the method for manufacturing a wiring board preferably further includes a step of removing palladium from the obtained wiring board.
[Example]

以下,列舉實施例進一步說明本發明,但本發明不受以下實施例任何限定。Hereinafter, the present invention will be further described with examples, but the present invention is not limited to the following examples.

[實施例1~12及比較例1~4]
<感光性樹脂積層體之製作>
將各實施例及比較例中所使用之感光性樹脂組合物之組成示於表1,將表1中所記載之各成分名之詳情示於表2。表1中之各成分之調配量均為換算成固形物成分之質量份。將表1中所示之各成分A~D加以混合,進而追加選自甲基乙基酮、乙醇、丙二醇單甲醚及丙二醇單甲醚乙酸酯之溶解性較佳者,製備感光性樹脂組合物。
[Examples 1 to 12 and Comparative Examples 1 to 4]
< Production of photosensitive resin laminated body >
The composition of the photosensitive resin composition used in each Example and Comparative Example is shown in Table 1, and the details of each component name described in Table 1 are shown in Table 2. The blending amounts of each component in Table 1 are all parts by mass converted to solid components. The components A to D shown in Table 1 are mixed, and further selected from methyl ethyl ketone, ethanol, propylene glycol monomethyl ether, and propylene glycol monomethyl ether acetate, which have better solubility, to prepare a photosensitive resin. combination.

使用棒式塗佈機將所獲得之感光性樹脂組合物均勻地塗佈於支持膜即厚度為16 μm之聚對苯二甲酸乙二酯膜(Toray(股)製造,產品名「FB40」)上,其後,於溫度調整為95℃之乾燥機中加熱5分鐘而使其乾燥,於支持膜上形成厚度為10 μm之感光性樹脂組合物層。The obtained photosensitive resin composition was uniformly coated on a support film, that is, a polyethylene terephthalate film with a thickness of 16 μm (manufactured by Toray Co., Ltd., product name "FB40") using a bar coater. After that, it was dried in a dryer adjusted to a temperature of 95 ° C. for 5 minutes to form a photosensitive resin composition layer having a thickness of 10 μm on a support film.

其次,於上述感光性樹脂組合物層之與支持膜為相反側之面上貼附覆蓋膜即厚度為33 μm之聚乙烯膜(Tamapoly(股)製造,產品名「GF-858」),藉此獲得感光性樹脂積層體。Next, a 33 μm-thick polyethylene film (manufactured by Tamapoly Corporation, product name “GF-858”) was attached to the surface of the photosensitive resin composition layer on the side opposite to the support film. This obtained a photosensitive resin laminated body.

<配線基板之製作>
(基材之製作)
使用利用研削材(日本Carlit(股)製造之Sakurundum A(#400))對積層有35 μm壓延銅箔之0.4 mm厚之銅箔積層板進行噴射刮擦研磨後之基材。
< Production of wiring board >
(Manufacture of base material)
A 0.4 mm-thick copper foil laminated board laminated with a 35 μm rolled copper foil was subjected to spray scraping and grinding using a ground material (Sakurundum A (# 400) manufactured by Carlit Japan Co., Ltd.).

(層壓)
一面將各實施例或比較例中所獲得之感光性樹脂積層體之聚乙烯膜剝離,一面藉由熱輥貼合機(旭化成(股)製造之AL-700)於輥溫度105℃、氣壓0.35 MPa及層壓速度1.5 m/min之條件下層壓於上述基材上,獲得層壓基板。
(laminated)
The polyethylene film of the photosensitive resin laminate obtained in each of the examples or comparative examples was peeled, and the temperature of the roller was 105 ° C. and the pressure of 0.35 by a hot roll laminator (AL-700 manufactured by Asahi Kasei Co., Ltd.). Laminated on the above substrate under conditions of MPa and a lamination speed of 1.5 m / min to obtain a laminated substrate.

(曝光)
關於各實施例及比較例,分別於下述條件(1)及(2)下對上述層壓基板進行曝光。條件(1)及(2)之曝光裝置之焦點位置均對準支持膜表面。
(exposure)
Regarding each Example and Comparative Example, the above-mentioned laminated substrate was exposed under the following conditions (1) and (2), respectively. The focal positions of the exposure devices of the conditions (1) and (2) are aligned with the surface of the support film.

條件(1)
實施例2及9以及比較例2係藉由直接繪圖式曝光裝置(Orbotech(股)製造之Paragon-Ultra 100,光源峰值波長:355 nm),於未剝離聚對苯二甲酸乙二酯膜之狀態下,以能夠獲得最小之獨立細線之曝光量進行曝光。
Condition (1)
Examples 2 and 9 and Comparative Example 2 were obtained by using a direct drawing exposure apparatus (Paragon-Ultra 100 manufactured by Orbotech Co., Ltd., light source peak wavelength: 355 nm) on an unpeeled polyethylene terephthalate film. In the state, exposure is performed with an exposure amount that can obtain the smallest independent thin line.

實施例3及比較例3係藉由直接繪圖式曝光裝置(ADTEC Engineering製造之IP-8 M8000H,光源峰值波長:405 nm),於未剝離聚對苯二甲酸乙二酯膜之狀態下,以能夠獲得最小之獨立細線之曝光量進行曝光。In Example 3 and Comparative Example 3, a direct drawing exposure device (IP-8 M8000H manufactured by ADTEC Engineering, light source peak wavelength: 405 nm) was used in a state where the polyethylene terephthalate film was not peeled. It is possible to obtain the exposure of the smallest independent thin line.

實施例1、5、6、7、8、11及12以及比較例1係藉由將水銀短弧光燈(Oak股份有限公司製作所製造之AHD-5000R)作為光源之曝光裝置(Oak製作所製造之EXM-1201),於未剝離聚對苯二甲酸乙二酯膜之狀態下,以能夠獲得最小之獨立細線之曝光量進行曝光。Examples 1, 5, 6, 7, 8, 11, and 12 and Comparative Example 1 are exposure devices using a mercury short-arc lamp (AHD-5000R manufactured by Oak Corporation) as a light source (EXM manufactured by Oak Corporation) -1201), in a state where the polyethylene terephthalate film is not peeled off, the exposure is performed with an exposure amount capable of obtaining the smallest independent fine line.

實施例4及10以及比較例4係使用直接繪圖曝光機(Orbotech(股)製造之NuvogoF10,光源峰值波長:375 nm(30%)+405 nm(70%)),於未剝離聚對苯二甲酸乙二酯膜之狀態下,以能夠獲得最小之獨立細線之曝光量進行曝光。Examples 4 and 10 and Comparative Example 4 used a direct drawing exposure machine (NuvogoF10 manufactured by Orbotech Co., Ltd., light source peak wavelength: 375 nm (30%) + 405 nm (70%)). In the state of the ethylene formate film, exposure is performed with an exposure amount that can obtain the smallest independent fine line.

條件(2)
於剝離聚對苯二甲酸乙二酯膜之狀態下,以能夠獲得最小之獨立細線之曝光量進行曝光,除此以外以與上述條件(1)相同之順序進行曝光。
Condition (2)
In the state in which the polyethylene terephthalate film is peeled off, the exposure is performed in the same order as in the above condition (1), except that the exposure is obtained with the smallest amount of independent fine lines.

(顯像)
其次,對於分別於上述條件(1)及(2)下曝光後之各個層壓基板,使用富士機工製造之精密鹼顯像機以最小顯像時間之2倍時間噴射30℃之1質量%之Na2 CO3 水溶液而將未曝光部除去。於顯像後,藉由純水以與顯像時間相同之時間進行水洗,其後藉由氣刀進行除水處理後進行熱風乾燥,獲得具備具有獨立細線圖案之評價用硬化膜的基板。上述最小顯像時間係指直至感光性樹脂組合物層之未曝光部分被完全溶解除去所需要之最小時間。
(Development)
Secondly, for each laminated substrate after exposure under the above conditions (1) and (2), a precision alkali imager manufactured by Fuji Machine Works was used to spray 1% by mass of 30 ° C at twice the minimum development time. The Na 2 CO 3 aqueous solution was used to remove the unexposed portion. After the development, the substrate was washed with pure water at the same time as the development time, and then air-dried by an air knife, followed by hot air drying, to obtain a substrate having an evaluation hardened film having an independent thin line pattern. The minimum development time is the minimum time required until the unexposed portion of the photosensitive resin composition layer is completely dissolved and removed.

(獨立細線寬之評價)
於形成於上述基板上的最小之獨立細線圖案中,將最粗部分之寬度作為最小獨立細線寬,依照下述基準進行判定。將結果合併示於表1。
A:未剝離支持膜而進行曝光(條件(1))而獲得之第1抗蝕劑圖案與於剝離支持膜後進行曝光(條件(2))而獲得之第2抗蝕劑圖案的最小獨立細線寬之差為3 μm以下
B:未剝離支持膜而進行曝光(條件(1))而獲得之第1抗蝕劑圖案與於剝離支持膜後進行曝光(條件(2))而獲得之第2抗蝕劑圖案的最小獨立細線寬之差大於3 μm且為5 μm以下
C:未剝離支持膜而進行曝光(條件(1))而獲得之第1抗蝕劑圖案與於剝離支持膜後進行曝光(條件(2))而獲得之第2抗蝕劑圖案的最小獨立細線寬之差大於5 μm
(Evaluation of independent fine line width)
Among the smallest independent thin line patterns formed on the substrate, the width of the thickest part was taken as the smallest independent thin line width, and the determination was made according to the following criteria. The results are shown in Table 1.
A: The minimum independence between the first resist pattern obtained by exposing the support film without peeling (condition (1)) and the second resist pattern obtained by exposing the support film after peeling (condition (2)) Thin line width difference is less than 3 μm
B: The minimum independence between the first resist pattern obtained by exposing the support film without peeling (condition (1)) and the second resist pattern obtained by exposing the support film after peeling (condition (2)) The difference between the fine line widths is greater than 3 μm and less than 5 μm
C: Minimum independence between the first resist pattern obtained by exposing the support film without peeling (condition (1)) and the second resist pattern obtained by exposing the support film after peeling (condition (2)) Thin line width difference greater than 5 μm

進而,使用包含實施例1~12之感光性樹脂組合物之感光性樹脂組合物層,藉由支持膜剝離後曝光而形成電路基板。關於藉由支持膜剝離後曝光而製作電路基板之情形與未剝離支持膜而進行曝光、除此以外於與支持膜剝離後曝光之情形相同之條件下製作電路基板之情形之配線寬之差,實施例1~12小於比較例1~4,因此,關於電路基板之不良率,實施例1~12小於比較例1~4。Furthermore, the photosensitive resin composition layer containing the photosensitive resin composition of Examples 1-12 was used, and the circuit board was formed by exposing and peeling a support film. Regarding the difference in wiring width between the case where a circuit substrate is produced by exposing the support film after peeling and the case where exposure is performed without peeling the support film, and the case where the circuit substrate is produced under the same conditions as the case where the support film is exposed after peeling, The examples 1 to 12 are smaller than the comparative examples 1 to 4. Therefore, regarding the defect rate of the circuit board, the examples 1 to 12 are smaller than the comparative examples 1 to 4.

P:Orbotech公司製造之「Paragon Ultra」
I:ADTEC Engineering製造之「IP-8 M8000H」
E:Oak製作所製造之「EXM-1201」
N:Orbotech(股)製造之「NuvogoF10」
P: "Paragon Ultra" made by Orbotech
I: "IP-8 M8000H" manufactured by ADTEC Engineering
E: "EXM-1201" manufactured by Oak Manufacturing
N: "NuvogoF10" manufactured by Orbotech

表2
[產業上之可利用性]
Table 2
[Industrial availability]

本發明之感光性樹脂積層體及抗蝕劑圖案之製造方法可適宜地適用於各種電路基板之製造。The manufacturing method of the photosensitive resin laminated body and resist pattern of this invention can be suitably used for manufacture of various circuit boards.

Claims (12)

一種支持膜剝離後曝光用之感光性樹脂積層體,其係具備 支持膜及 感光性樹脂組合物層者,上述感光性樹脂組合物層配置於上述支持膜上,且包含感光性樹脂組合物; 上述感光性樹脂組合物含有(A)鹼溶性高分子、(B)與光起始劑具有反應性之化合物及(C)光起始劑, 使用#400之研削材對積層有35 μm壓延銅箔之0.4 mm厚之銅箔積層板進行噴射刮擦研磨,其後預熱至60℃,藉由熱輥貼合機,於輥溫度105℃、氣壓0.35 MPa、層壓速度1.5 m/min之條件下將上述感光性樹脂積層體層壓於上述銅箔積層板,其次依照下述條件(1)及(2)之任一者進行曝光: (1)使用曝光裝置,於將焦點位置對準支持膜表面之狀態下進行曝光,自曝光後之感光性樹脂組合物層剝離支持膜; (2)剝離上述支持膜,其次使用曝光裝置於將焦點位置對準原先支持膜表面之部位之狀態下進行曝光; 使用精密鹼顯像機以最小顯像時間之2倍時間噴射30℃之1質量%Na2 CO3 水溶液而除去未曝光部,以與顯像時間相同之時間藉由純水進行水洗,藉由氣刀進行除水處理後進行熱風乾燥,獲得抗蝕劑圖案,於上述抗蝕劑圖案中,經過上述條件(1)之曝光而獲得之第1抗蝕劑圖案與經過上述條件(2)之曝光而獲得之第2抗蝕劑圖案之可圖案化之最小獨立細線寬之差為5 μm以下, 上述曝光裝置為 (a)曝光之光之峰值波長為350~370 nm之曝光裝置; (b)曝光之光之峰值波長為400~410 nm之曝光裝置; (c)曝光之光之峰值波長為360~380 nm及390~410 nm,且波長強度比為360~380 nm:390~410 nm=30:70之曝光裝置;及 (d)水銀短弧光燈 之任一者。A photosensitive resin laminate for exposing after a support film is peeled off, comprising a support film and a photosensitive resin composition layer, wherein the photosensitive resin composition layer is disposed on the support film and includes a photosensitive resin composition; The said photosensitive resin composition contains (A) an alkali-soluble polymer, (B) a compound reactive with a photoinitiator, and (C) a photoinitiator. 35 μm rolled copper is laminated on the laminated material using a # 400 grinding material. The 0.4 mm thick copper foil laminate was spray-brazed and ground, and then pre-heated to 60 ° C. Using a hot roll laminator, the roll temperature was 105 ° C, air pressure was 0.35 MPa, and the lamination speed was 1.5 m / min. The above-mentioned photosensitive resin laminated body is laminated on the above-mentioned copper foil laminated board under the conditions, and then exposure is performed in accordance with any one of the following conditions (1) and (2): (1) using an exposure device, the focus position is aligned to support The film is exposed in a state of the film surface, and the supporting film is peeled off from the photosensitive resin composition layer after the exposure; (2) The supporting film is peeled off, and then the exposure device is used to align the focus position with the original supporting film surface. Exposure; using precision alkali The developing machine sprays a 1% by mass Na 2 CO 3 aqueous solution at 30 ° C. at a time twice as long as the minimum developing time to remove the unexposed portions, and the water is washed with pure water at the same time as the developing time, and is performed with an air knife. After the water removal treatment, hot air drying is performed to obtain a resist pattern. Among the resist patterns, a first resist pattern obtained by exposure to the above condition (1) and an exposure obtained from the above condition (2) are obtained. The difference in the patternable minimum independent fine line width of the second resist pattern is 5 μm or less. The above exposure device is (a) an exposure device having a peak wavelength of light of 350 to 370 nm; (b) an exposure device. An exposure device with a peak wavelength of light of 400 to 410 nm; (c) The peak wavelength of exposed light is 360 to 380 nm and 390 to 410 nm, and the wavelength intensity ratio is 360 to 380 nm: 390 to 410 nm = 30: 70 exposure device; and (d) any one of mercury short arc lamps. 如請求項1之支持膜剝離後曝光用之感光性樹脂積層體,其用於形成配線。The photosensitive resin laminated body for exposure after peeling of the support film according to claim 1, which is used to form wiring. 如請求項1或2之支持膜剝離後曝光用之感光性樹脂積層體,其中 上述(A)鹼溶性高分子包含來自丙烯酸及甲基丙烯酸之至少一者之結構, 上述(B)與光起始劑具有反應性之化合物包含選自具有雜環結構之陽離子聚合性化合物及乙烯醚化合物之至少1種陽離子聚合性化合物, 上述(C)光起始劑包含光陽離子聚合起始劑。For example, the photosensitive resin laminated body for exposure after peeling of the supporting film of claim 1 or 2, wherein the (A) alkali-soluble polymer includes a structure derived from at least one of acrylic acid and methacrylic acid, and the above (B) and Guangqi The compound having a reactive initiator includes at least one type of cationically polymerizable compound selected from a cationic polymerizable compound having a heterocyclic structure and a vinyl ether compound, and the (C) photoinitiator includes a photocationic polymerization initiator. 如請求項3之支持膜剝離後曝光用之感光性樹脂積層體,其中上述(B)與光起始劑具有反應性之化合物包含具有雜環結構之陽離子聚合性化合物, 上述具有雜環結構之陽離子聚合性化合物包含對季戊四醇各加成平均9莫耳之環氧乙烷的聚乙二醇之四縮水甘油醚化合物及3-乙基-3{[(3-乙基氧雜環丁烷-3-基)甲氧基]甲基}氧雜環丁烷中之至少一者。For example, the photosensitive resin laminate for exposure after peeling of the supporting film of claim 3, wherein the compound (B) reactive with the photoinitiator includes a cationically polymerizable compound having a heterocyclic structure, and the compound having a heterocyclic structure described above The cationic polymerizable compound includes a tetraglycidyl ether compound of polyethylene glycol, polyethylene glycol, and ethylene glycol, each of which has an average addition of 9 moles to pentaerythritol, and 3-ethyl-3 {[(3-ethyloxetane- 3-yl) methoxy] methyl} oxetane. 如請求項1或2之支持膜剝離後曝光用之感光性樹脂積層體,其中 上述(A)鹼溶性高分子包含來自丙烯酸及甲基丙烯酸中之至少一者之結構, 上述(B)與光起始劑具有反應性之化合物包含含有一個以上硫醇基之化合物及具有兩個以上乙烯性雙鍵之化合物, 上述包含一個以上硫醇基之化合物之量相對於上述感光性樹脂組合物之總質量為6質量%以上, 上述(C)光起始劑包含光聚合起始劑。For example, the photosensitive resin laminate for exposure after peeling of the support film of claim 1 or 2, wherein the (A) alkali-soluble polymer includes a structure derived from at least one of acrylic acid and methacrylic acid, and the above (B) and light The compound having a reactive initiator includes a compound containing one or more thiol groups and a compound having two or more ethylenic double bonds. The amount of the compound containing one or more thiol groups is relative to the total amount of the photosensitive resin composition. The mass is 6 mass% or more, and the (C) photoinitiator includes a photopolymerization initiator. 如請求項5之支持膜剝離後曝光用之感光性樹脂積層體,其中 上述包含一個以上硫醇基之化合物包含季戊四醇四(3-巰基丁酸)酯, 上述具有兩個以上乙烯性雙鍵之化合物包含具有雙酚A結構與兩個以上乙烯性雙鍵之化合物。For example, the photosensitive resin laminate for exposure after peeling of the supporting film of claim 5, wherein the compound containing one or more thiol groups includes pentaerythritol tetrakis (3-mercaptobutyric acid) ester, and the above having two or more ethylenic double bonds The compound includes a compound having a bisphenol A structure and two or more ethylenic double bonds. 如請求項3之支持膜剝離後曝光用之感光性樹脂積層體,其中上述(A)鹼溶性高分子以上述(A)鹼溶性高分子為基準而包含50質量%以上之量的來自具有-OH基及/或-CN基之單體的單體單元。For example, the photosensitive resin laminate for exposure after peeling of the support film of claim 3, wherein the (A) alkali-soluble polymer is based on the (A) alkali-soluble polymer and contains 50% by mass or more of the polymer having- A monomer unit of an OH-based and / or -CN-based monomer. 如請求項1或2之支持膜剝離後曝光用之感光性樹脂積層體,其具備配置於上述感光性樹脂組合物層之與上述支持膜為相反側之面之覆蓋膜。For example, the photosensitive resin laminated body for exposure after peeling of the support film of Claim 1 or 2 is provided with the cover film arrange | positioned on the surface of the said photosensitive resin composition layer on the side opposite to the said support film. 如請求項1或2之支持膜剝離後曝光用之感光性樹脂積層體,其中上述(a)~(c)之曝光裝置的曝光之光為雷射光。For example, the photosensitive resin laminated body for exposure after peeling of the support film of claim 1 or 2, wherein the exposure light of the exposure devices of (a) to (c) above is laser light. 一種抗蝕劑圖案之製造方法,其包含: 層壓步驟,將如請求項1至9中任一項之支持膜剝離後曝光用之感光性樹脂積層體的上述感光性樹脂組合物層密接於基材上; 支持膜剝離步驟,將上述感光性樹脂積層體之上述支持膜剝離; 曝光步驟,對上述感光性樹脂積層體進行曝光;以及 顯像步驟,對上述曝光之感光性樹脂積層體進行顯像。A method for manufacturing a resist pattern includes: In the laminating step, the photosensitive resin composition layer of the photosensitive resin laminate for exposure after peeling of the supporting film according to any one of claims 1 to 9 is adhered to the substrate; A supporting film peeling step, peeling the supporting film of the photosensitive resin laminate; An exposure step of exposing the photosensitive resin laminate; and The developing step develops the exposed photosensitive resin laminate. 如請求項10之抗蝕劑圖案之製造方法,其中上述曝光步驟包括自上述感光性樹脂積層體之設置有上述支持膜之側進行曝光。The method for manufacturing a resist pattern according to claim 10, wherein the exposure step includes exposing from the side of the photosensitive resin laminated body on which the support film is provided. 一種配線基板之製造方法,其包含: 抗蝕劑圖案形成步驟,藉由如請求項10或11之方法製造具有抗蝕劑圖案之基板;及 配線形成步驟,藉由對上述具有抗蝕劑圖案之基板實施蝕刻或鍍覆而於基板上形成配線。A method for manufacturing a wiring substrate, comprising: a resist pattern forming step for manufacturing a substrate having a resist pattern by a method such as claim 10 or 11; and a wiring forming step for applying a resist pattern to the above The substrate is etched or plated to form wiring on the substrate.
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