TW201921611A - Mounting device and production method - Google Patents

Abstract

This mounting device 10 bonds a semiconductor chip 100 onto a mounting body, which is a base board 110 or another semiconductor chip 100, to produce a semiconductor device, and comprises: a stage 30 having a first surface, and a second surface on the side facing away from the first surface; an intermediate body 40 interposed between the first surface and the base board 110; a mounting head 50 capable of relative movement with respect to the stage 30 and bonding the semiconductor chip 100 onto the mounting body; and an irradiation unit 18 irradiating from the second surface side of the stage 30 toward the intermediate body 40, an electromagnetic wave 62 that passes through the stage 30 while being absorbed by the intermediate body 40. The intermediate body absorbs the electromagnetic wave, thereby heating the base board.

Description

Packaging device and manufacturing method

This specification discloses a packaging device for manufacturing a semiconductor device by bonding a semiconductor wafer to a substrate or another semiconductor wafer, which is a package, and a method for manufacturing the semiconductor device.

When a semiconductor wafer is bonded to a substrate or other semiconductor wafer, the semiconductor wafer is usually heated and pressurized by a heated package head. However, it is difficult to appropriately heat a semiconductor wafer to be bonded using only the heat from the package head. In particular, in recent years, in order to further increase the functionality and miniaturization of semiconductor devices, it has been proposed to laminate and package a plurality of semiconductor wafers. In this case, in order to shorten the packaging processing time, a plurality of semiconductor wafers may be temporarily crimped and laminated, and then the plurality of semiconductor wafers may be formally crimped together. In other words, after a plurality of semiconductor wafers are laminated in a temporarily pressure-bonded state to form a temporarily laminated body, the upper surface of the temporarily laminated body is heated and pressurized by a heated package head to form a pressure-bonded body. In this case, it is difficult to appropriately heat the semiconductor wafer to the lowermost layer of the temporarily laminated body using only the heat from the package head. Therefore, conventionally, when a semiconductor device is bonded, the entire stage on which the substrate is placed is heated. Thereby, heating can be performed from the upper and lower sides of the semiconductor wafer.
[Prior Art Literature]
[Patent Literature]

[Patent Document 1] International Publication No. 2010/050209
[Patent Document 2] Japanese Patent No. 3833531
[Patent Document 3] Japanese Patent No. 4001341

[Problems to be Solved by the Invention]
However, in the case where the entire stage is heated, the semiconductor wafer disposed at a position different from the semiconductor wafer to be joined (the object to be heated) is also continuously heated. As a result, heat is input to the semiconductor wafer for a long time. Such a long-term heat input causes deterioration of a resin such as a non-conductive film (Non Conductive Film) provided on a bottom surface of the semiconductor wafer, and in particular, a reduction in package quality.

In order to avoid this problem, it is also conceivable to install heaters for local heating such as pulse heaters at a plurality of locations on the platform, and to turn on heaters at only necessary locations. However, when such a heater for local heating is embedded in a platform, it is difficult to maintain the flatness of the platform and even cause a reduction in package quality.

In addition, Patent Documents 1 to 3 disclose techniques for light-heating a substrate with light irradiated from the back side of the stage. However, in these techniques, the types of substrates that can be applied are limited.

Therefore, the present specification provides a packaging device capable of appropriately heating a semiconductor wafer to be joined regardless of the type of substrate, and a method for manufacturing the semiconductor device.
[Means for solving problems]

The packaging device disclosed in the present case manufactures a semiconductor device by bonding a semiconductor wafer to a substrate or other semiconductor wafer, that is, a packaged body, and the packaging device is characterized by including a platform having a first surface, and the first surface is A second surface on the opposite side; an intermediate body interposed between the first surface and the substrate; a packaging head that is relatively movable with respect to the platform to bond the semiconductor wafer to the packaged body; And an irradiating unit that irradiates the intermediate body from the second surface side of the platform with electromagnetic waves that have passed through the platform and absorbed by the intermediate body, and the intermediate body absorbs the electromagnetic waves to heat the substrate.

Here, the said intermediate body may have a heat insulation part which suppresses the heat transfer in a surface direction. In addition, the intermediate body may include a gap portion formed by a groove or a hole extending in the horizontal direction.

In addition, the intermediate body may be an absorbing layer that sequentially absorbs the electromagnetic wave, a heat transfer layer that transmits the electromagnetic wave and has a high heat transfer property, and includes the electromagnetic wave in order from the first surface side. A multi-layered structure in which a heat-insulating layer of a material that transmits and has low heat conductivity is laminated in the thickness direction.

In addition, the electromagnetic wave may include multiple wave bands, and the intermediate may include a multilayer structure in which a plurality of absorption layers respectively provided for the multiple wave bands are laminated in a thickness direction, and the multiple absorption layers are corresponding The longer the band is, the more it is layered away from the platform.

In addition, a plurality of the semiconductor wafers may be thermocompression-bonded to the substrate, and the irradiation unit may include a changing mechanism that changes at least one of an irradiation area of the electromagnetic wave and an irradiation position of the electromagnetic wave.

In addition, the package head may include a heater for temporarily crimping a temporarily laminated body in which a plurality of the semiconductor wafers are laminated in a temporarily crimped state, and irradiating the irradiation unit with the irradiation unit. Intermediate body, and the temporary laminated body is heated together with the heater.

The method for manufacturing a semiconductor device disclosed in this specification is a method of manufacturing a semiconductor device by bonding a semiconductor wafer to a substrate or another semiconductor wafer, that is, a packaged body, and the method for manufacturing a semiconductor device is characterized by including a mounting step, The substrate on the intermediate body of the first side of the platform; a bonding step of bonding the semiconductor wafer to the packaged body using a packaging head that is relatively movable relative to the platform; and an intermediate body heating step of At least a part of the bonding step, while irradiating an electromagnetic wave absorbed by the intermediate body and transmitted through the platform from an irradiation unit disposed on the opposite side of the package head across the platform, the The intermediate is heated.
[Effect of the invention]

According to the technology disclosed in this specification, an intermediate that absorbs electromagnetic waves is provided between the platform and the substrate. Therefore, regardless of the type of substrate, the intermediate, or even the substrate in contact with the intermediate, can be heated. As a result, the semiconductors to be joined can be heated. The wafer is properly heated.

Hereinafter, a method for manufacturing a semiconductor device and a packaging device 10 will be described with reference to the drawings. FIG. 1 is a diagram showing a configuration of a packaging device 10. The packaging device 10 is a device for packaging a semiconductor wafer 100 on a substrate 110. This packaging device 10 is particularly suitable for a case where a plurality of semiconductor wafers 100 are laminated and packaged. However, the packaging device 10 is of course applicable to the case where the semiconductor wafer 100 is not laminated. The package device 10 is particularly suitable for a case where the substrate 110 transmits or reflects an electromagnetic wave 62 described later. However, the substrate 110 does not necessarily have to transmit or reflect the electromagnetic wave 62, and the substrate 110 may have a structure that easily absorbs the electromagnetic wave 62.

In addition, in the following description, in a multilayer body formed by stacking a plurality of semiconductor wafers 100, a case in which a plurality of semiconductor wafers 100 constituting the multilayer body are temporarily pressed is referred to as a "temporary multilayer body STt", and a plurality of semiconductors The wafer 100 is distinguished when it is referred to as a "wafer laminate STc" when it is in a fully crimped state.

The packaging device 10 includes a wafer supply unit 12, a wafer transfer unit 14, a bonding unit 16, an irradiation unit 18, and a control unit 20 that controls driving of these units. The wafer supply unit 12 is a portion where the semiconductor wafer 100 is taken out from a wafer supply source and supplied to the wafer transfer unit 14. The wafer supply unit 12 includes an upper top 22, a die picker 24, and a transfer head 26.

In the wafer supply unit 12, a plurality of semiconductor wafers 100 are placed on a dicing tape TE. At this time, the semiconductor wafer 100 is placed in a face-up state with the bump 106 facing upward. The upper top portion 22 is configured to hold one semiconductor wafer 100 upward from the plurality of semiconductor wafers 100 while keeping the surface facing upward. The die picker 24 attracts and holds the semiconductor wafer 100 lifted from the upper top 22 at its lower end. The die picker 24 that has received the semiconductor wafer 100 is rotated 180 degrees on the spot such that the bump 106 of the semiconductor wafer 100 faces downward, that is, the semiconductor wafer 100 is brought into a face-down state. In this state, the transfer head 26 receives the semiconductor wafer 100 from the die picker 24.

The transfer head 26 can be moved in the vertical direction and the horizontal direction, and the semiconductor wafer 100 can be sucked and held at the lower end thereof. When the die picker 24 is rotated 180 degrees and the semiconductor wafer 100 is in a face-down state, the transfer head 26 sucks and holds the semiconductor wafer 100 at its lower end. Then, the transfer head 26 moves in the horizontal direction and the vertical direction, and moves to the wafer transfer unit 14.

The wafer transfer unit 14 includes a turntable 28 that rotates around a vertical rotation axis Ra. The transfer head 26 mounts the semiconductor wafer 100 at a predetermined position on the turntable 28. The turntable 28 on which the semiconductor wafer 100 is placed rotates around the rotation axis Ra, and the semiconductor wafer 100 is conveyed to the bonding unit 16 located on the opposite side from the wafer supply unit 12.

The bonding unit 16 includes a platform 30 that supports the substrate 110, an intermediate body 40 that is placed on the platform 30, and a package head 50 that mounts the semiconductor wafer 100 on the substrate 110. The stage 30 includes an upper surface (first surface) of the support substrate 110 and a lower surface (second surface) opposite to the first surface. In addition, the platform 30 can be moved in the horizontal direction to adjust the relative positional relationship between the substrate 110 and the package head 50 placed on it. The platform 30 is composed of a material that can transmit the electromagnetic wave 62 radiated from the irradiation unit 18 as described in detail below. Therefore, when the electromagnetic wave 62 is visible light or infrared light, the platform 30 can be configured using, for example, quartz, magnesium fluoride, germanium, or the like.

An intermediate body 40 is provided on the upper surface (first surface) of the platform 30. The intermediate body 40 is a plate-shaped member on which the substrate 110 is placed. In other words, the intermediate body 40 is interposed between the platform 30 and the substrate 110. The intermediate body 40 can be fixed to the platform 30 inseparably, and can also be removed from the platform 30 if necessary. In addition, the intermediate body 40 may have a single-layer structure or a multilayer structure. Among them, whether it is a single layer or a multilayer, the intermediate body 40 has at least one or more absorbing layers capable of absorbing the electromagnetic waves 62 emitted from the irradiation unit 18.

The package head 50 laminates a plurality of semiconductor wafers 100 on the substrate 110 and performs packaging. The package head 50 can hold the semiconductor wafer 100 at its lower end, and can rotate and lift around a vertical rotation axis Rb. The package head 50 presses the semiconductor wafer 100 onto the substrate 110 or other semiconductor wafers 100. Specifically, the package head 50 is lowered such that the held semiconductor wafer 100 is pressed against the substrate 110 or the like, and thereby the semiconductor wafer 100 is temporarily or formally crimped. A temperature-variable heater (not shown) is built into the package head 50. The package head 50 is heated to a first temperature T1 during temporary crimping, and is heated to a temperature higher than the first temperature T1 during formal crimping. The second temperature T2. In addition, the package head 50 applies a first load F1 to the semiconductor wafer 100 when the temporary pressure bonding is performed, and adds a second load F2 to the semiconductor wafer 100 when the actual pressure bonding is performed.

A camera (not shown) is provided near the package head 50. An alignment mark serving as a positioning reference is provided on the substrate 110 and the semiconductor wafer 100, respectively. The camera images the substrate 110 and the semiconductor wafer 100 so as to reflect the alignment marks. The control unit 20 grasps the relative positional relationship between the substrate 110 and the semiconductor wafer 100 based on the image data obtained by the imaging, and adjusts the rotation angle of the package head 50 about the axis Rb and the horizontal position of the platform 30 as necessary.

The irradiation unit 18 locally heats the substrate 110 by radiating an electromagnetic wave 62 of a specific wavelength from the back side of the stage 30. The irradiation unit 18 includes at least an electromagnetic wave source 60 that radiates an electromagnetic wave 62. In the following description, a case where the electromagnetic wave 62 is infrared laser light will be described as an example. However, the electromagnetic wave 62 is not particularly limited as long as it has a wavelength that can easily pass through the platform 30 and be easily absorbed by the intermediate body 40. Therefore, as the electromagnetic wave 62, for example, infrared rays and visible rays can be used. In addition, the electromagnetic wave 62 may have only a single wavelength, or may have multiple wavelengths. Furthermore, the electromagnetic wave source 60 is not particularly limited as long as it can irradiate electromagnetic waves of a desired wavelength and power. For example, a laser oscillator, a laser diode (LD), or a light emitting diode (Light Emitting Diode) can be used. , LED), halogen lamps, xenon lamps, etc. The irradiation unit 18 may further include a changing mechanism for changing at least one of the irradiation area and the irradiation position of the electromagnetic wave 62. The changing mechanism may include, for example, an optical member such as a diaphragm, a lens, a mirror, or an optical fiber, or a driving member that drives these optical members to scan electromagnetic waves.

The control unit 20 controls driving of each unit, and includes, for example, a central processing unit (CPU) that performs various calculations, and a memory unit that stores various data or programs. The control unit 20 drives each unit in accordance with a program stored in the memory unit, and performs a packaging process of the semiconductor wafer. For example, the control unit 20 drives the package head 50 and the platform 30 to package the semiconductor wafer on the substrate 110. In addition, the control unit 20 drives the irradiation unit 18 to locally heat the substrate 110 while performing a formal crimping process described later.

Next, a semiconductor device manufactured using the package device will be described with reference to FIGS. 3 and 4. FIG. 3 is a schematic diagram showing an example of a semiconductor device, and FIG. 4 is a schematic diagram of a semiconductor wafer 100. In FIG. 3, the thick line between the boundary between the semiconductor wafer 100 and the substrate 110 and the boundary between the two semiconductor wafers 100 indicates that they are formally crimped.

The semiconductor device operated in this example is shown in FIG. 2, and a plurality of (four in the example of the figure) semiconductor wafers 100 are packaged on the upper surface area layer of the substrate 110. In this example, the substrate 110 includes a material that transmits infrared laser light as the electromagnetic wave 62, such as sapphire glass. A plurality of packaging blocks arranged in a grid pattern are set on the substrate 110. A plurality of semiconductor wafers 100 are stacked and packaged in each packaging block. An electrode 112 is formed on the surface of each package block at a position corresponding to the bump 106 of the semiconductor wafer 100 to be packaged.

Next, the configuration of the semiconductor wafer 100 will be described. As shown in FIG. 3, electrode terminals 102 and 104 are formed on the upper and lower surfaces of the semiconductor wafer 100. A bump 106 is formed on one side of the semiconductor wafer 100 so as to be connected to the electrode terminal 102. The bump 106 contains a conductive metal and is melted at a predetermined melting temperature Tm.

In addition, a non-conductive film (hereinafter referred to as “NCF”) 108 is attached to one side of the semiconductor wafer 100 so as to cover the bumps 106. The NCF 108 functions as an adhesive for bonding the semiconductor wafer 100 and the substrate 110 or other semiconductor wafers 100, and includes a non-conductive thermosetting resin such as polyimide resin and epoxy resin. ), Acrylic resin, phenoxy resin, polyether sulfone, etc. The thickness of the NCF 108 is higher than the average height of the bumps 106, and the bumps 106 are substantially completely covered by the NCF 108. NCF 108 is a solid film at normal temperature, but if it exceeds a predetermined softening start temperature Ts, it gradually and reversibly softens to exhibit fluidity, and if it exceeds a predetermined hardening start temperature Tt, it begins to harden irreversibly.

Here, the softening start temperature Ts is lower than the hardening start temperature Tt and the melting temperature Tm of the bumps 106. The first temperature T1 for temporary compression bonding is higher than the softening start temperature Ts, and lower than the melting temperature Tm and the hardening start temperature Tt. In addition, the second temperature T2 for the main compression bonding is higher than the melting temperature Tm and the hardening start temperature Tt. That is, Ts <T1 <(Tm, Tt) <T2.

When the semiconductor wafer 100 is temporarily pressure-bonded to the substrate 110 or the lower semiconductor wafer 100 (hereinafter, referred to as a "package" when the two are not distinguished), the package head 50 is heated to the first temperature T1. The semiconductor wafer 100 is then pressurized. At this time, the NCF 108 of the semiconductor wafer 100 is heated to the vicinity of the first temperature T1 due to heat transfer from the package head 50, and is softened to have fluidity. In addition, the NCF 108 can flow into the gap between the semiconductor wafer 100 and the packaged body, thereby reliably filling the gap.

When the semiconductor wafer 100 is formally crimped to the package body, the package head 50 is heated to the second temperature T2, and then the semiconductor wafer 100 is pressurized. At this time, the bumps 106 and NCF 108 of the semiconductor wafer 100 are heated to the vicinity of the second temperature T2 due to heat transfer from the package head 50. As a result, the bumps 106 are melted and can be soldered to the opposite package. In addition, by this heating, the NCF 108 is hardened in a state where the gap between the semiconductor wafer 100 and the package is filled, so the semiconductor wafer 100 and the package are firmly fixed. That is, in the case of the actual pressure bonding, the semiconductor wafer 100 is thermally pressure-bonded to the substrate 110 or the like.

Here, it takes a certain time to switch the temperature of the package head 50 from the first temperature T1 to the second temperature T2 or from the second temperature T2 to the first temperature T1. Therefore, in order to shorten the manufacturing time of the semiconductor device, it is effective to reduce the number of times the temperature of the package head 50 is switched. Therefore, in a case where a plurality of semiconductor wafers 100 are laminated and packaged, a process is proposed in which all the semiconductor wafers 100 are temporarily crimped and then the temporarily crimped semiconductor wafers 100 are formally crimped. Specifically, first, using the package head 50 heated to the first temperature T1, a temporary laminated body STt formed by temporarily crimping and laminating a plurality of semiconductor wafers 100 is formed in a plurality of packaging blocks. Then, the upper surface of the temporary laminated body STt is pressurized by the package head 50 switched to the second temperature T2, thereby the plurality of semiconductor wafers 100 constituting the temporarily laminated body STt are formally crimped together. By gradually packaging the semiconductor wafer 100 in this order, the number of times the temperature of the package head 50 is switched can be greatly reduced, and the manufacturing time of the semiconductor device can be greatly reduced.

In addition, as the description so far indicates, in order to appropriately package the semiconductor wafer 100, it is desirable to heat the semiconductor wafer 100 to be packaged to an appropriate temperature corresponding to a processing process thereof. For example, at the time of the actual pressure bonding, the semiconductor wafer 100 must be heated to a temperature higher than the hardening start temperature Tt of the NCF 108 and a temperature higher than the melting temperature Tm of the bump 106. However, it is sometimes difficult to heat all the semiconductor wafers 100 to an appropriate temperature using only the heat from the package head 50. In particular, when the plurality of semiconductor wafers 100 constituting the temporary laminated body STt are formally pressure-bonded together, it is difficult to appropriately heat the lowermost semiconductor wafer 100 using only the heat from the package head 50.

In addition, in a temporarily laminated body STt, it is desirable that the temperature difference between the temperature of the uppermost semiconductor wafer 100 and the temperature of the lowermost semiconductor wafer 100 (hereinafter referred to as the "internal temperature difference in the laminated body") ΔT is small. If the temperature difference ΔT in the laminate is large, the package quality will be uneven. However, it is difficult to reduce the temperature difference ΔT inside the laminate using only the heat from the package head 50.

Therefore, a heater is usually built in the stage 30 on which the substrate 110 is placed, and the entire substrate 110 is also heated. According to this configuration, the temporary laminated body STt is also heated from the lower side, so that the semiconductor wafer 100 in the lowermost layer is also easily heated to an appropriate temperature, and the temperature difference ΔT inside the laminated body can be reduced to some extent.

However, when the platform 30 is heated as a whole, the temperature must be sufficiently lower than the hardening start temperature Tt of the NCF 108 as a matter of course. The reason for this is that if the temperature of the stage 30 is higher than the curing start temperature Tt, the NCF 108 of the semiconductor wafer 100 after the temporary compression bonding and before the actual compression bonding is thermally cured. Therefore, the platform 30 cannot be set to a high temperature, and it is difficult to sufficiently reduce the temperature difference ΔT inside the laminate.

In addition, even if the stage 30 is made to have a low temperature lower than the hardening start temperature Tt, the semiconductor wafer 100 temporarily or formally crimped on the substrate 110 is continued for a long time when the entire stage 30 is heated. Enter the heat. Such long-term heat input causes deterioration of the semiconductor wafer 100, especially the NCF 108, and even deterioration of package quality.

Therefore, as described above, the packaging device 10 disclosed in this specification is provided with the irradiation unit 18 under the platform 30, and the substrate 110 is locally heated by the electromagnetic wave 62. FIG. 4 is an imaginary view showing a state where the substrate 110 is partially heated. In addition, in FIG. 4, the thickness of the platform 30, the intermediate body 40, and the substrate 110 is different from the actual thickness for easy understanding, but the platform 30 is actually thicker, and the intermediate body 40 and the substrate 110 are thinner. In addition, three packaging blocks are illustrated in FIG. 4, but in the following description, these packaging blocks are sequentially referred to as "block A", "block B", and "block C" from the left side of the drawing. ". In addition, in FIG. 4, the thick line at the boundary between the semiconductor wafer 100 and the packaged body (the substrate 110 or another semiconductor wafer 100) indicates that it is officially crimped, and the dotted line indicates that it is temporarily crimped. Therefore, in FIG. 4, the laminated body of the block A is a wafer laminated body STc which is formally crimped, and the laminated body of the blocks B and C is a temporary laminated body STt after the provisional crimping and before the formal crimping. FIG. 4 shows a state when the temporary laminated body STt of the block B is formally crimped.

As shown in FIG. 4, when temporarily bonding one temporary laminated body STt, the temporary laminated body STt is heated and pressurized by the packaging head 50 heated to the second temperature T2. In addition, the intermediate body 40 is irradiated with an electromagnetic wave 62 to a range corresponding to the block B in which the temporary laminated body STt where the formal crimping target is arranged, and the range corresponding to the block B is heated by the electromagnetic wave 62.

Here, as described above, in this example, the electromagnetic wave 62 is infrared laser light, and the platform 30 includes a material that transmits the electromagnetic wave 62. Further, an intermediate body 40 having an absorbing layer that easily absorbs electromagnetic waves 62 (infrared laser light) is provided between the stage 30 and the substrate 110. In this configuration, when an electromagnetic wave 62 is irradiated from the lower surface side (second surface side) of the platform 30 to the range corresponding to the block B in the intermediate body 40, the electromagnetic wave 62 passes through the platform 30 and is absorbed by the intermediate body 40. The energy of the electromagnetic wave 62 absorbed by the intermediate body 40 is converted into heat, and the irradiation range of the electromagnetic wave 62 in the intermediate body 40 is heated. In addition, a part (irradiation range) of the intermediate body 40 is locally heated, so that the substrate 110 in contact with the intermediate body 40 is also locally heated.

Here, as described above, it is necessary for the platform 30 to transmit the electromagnetic wave 62. Therefore, the platform 30 is preferably formed of a material having a high transmittance of the electromagnetic wave 62. In addition, the platform 30 also expects materials that lack heat transfer properties. The reason is that the heat of the intermediate body 40 heated by the electromagnetic wave 62 is prevented from being transferred to other packaging blocks or the outside through the platform 30. To satisfy such a condition, the platform 30 is preferably made of, for example, quartz or barium fluoride, magnesium fluoride, calcium fluoride, or the like.

The wavelength of the electromagnetic wave 62 is not particularly limited as long as it passes through the platform 30 and is absorbed by the intermediate body 40. However, when the wavelength is too short (for example, in the ultraviolet region), the output of the light source generating the wavelength is usually low. In a case where an output suitable for heating is to be obtained, a case where the wavelength of the electromagnetic wave 62 is larger than visible light, that is, 750 nm or more is preferable as the light source. However, of course, if it can be irradiated with a sufficient output, the electromagnetic wave 62 can also be visible light (less than 750 nm).

The irradiation range of the electromagnetic wave 62 is preferably substantially the same as the outer shape of the semiconductor wafer 100. In addition, in order to irradiate the electromagnetic wave 62 only to a required range, the irradiation unit 18 preferably has a changing mechanism that changes at least one of the irradiation range and the irradiation position of the electromagnetic wave 62. Various configurations of the changing mechanism are conceivable. For example, the changing mechanism may include a moving mechanism that moves the position of the electromagnetic wave source 60 relative to the platform 30. The moving mechanism includes, for example, an XY moving mechanism that moves the stage 30. In addition, in order to irradiate only the required irradiation range, the changing mechanism may have, for example, an aperture 63 as shown in FIG. The opening corresponding to the irradiation range. The diaphragm 63 may be appropriately replaced according to a target semiconductor device.

In addition, as another form, the irradiation range may be scanned in the vicinity of the substrate 110 by the electromagnetic wave 62 having a sufficiently smaller diameter than the irradiation range. In order to obtain a small-diameter electromagnetic wave 62 near the substrate 110, an electromagnetic wave source 60 that emits a small-diameter parallel electromagnetic wave (eg, parallel light) can be used, and an optical member (lens, etc.) can also be used to focus the large-diameter electromagnetic wave 62 around the substrate 110. . In addition, in order to scan the electromagnetic wave 62, the electromagnetic wave source 60 itself may be moved, and a mirror or the like that bends the electromagnetic wave 62 may be moved. As a form of the moving mirror, for example, a galvano motor may be used to drive a current mirror mechanism that drives two or more mirrors. In addition, a coil motor or a cam may be used as a mechanism for driving the mirror or the electromagnetic wave source 60. In addition, when the directivity of the electromagnetic wave 62 irradiated from the electromagnetic wave source 60 is low and the electromagnetic wave 62 travels in various directions, as shown in FIG. 5, a reflective surface 61 that refracts and condenses the electromagnetic wave 62 in a desired direction may be provided . In the example of FIG. 5, a reflective surface 61 having a curved surface is formed by vapor-depositing a metal or the like on the inner surface of a substantially egg-shaped cavity, and the electromagnetic waves 62 from the electromagnetic wave source 60 are collected at a predetermined point.

In addition, as another form, in order to irradiate only a required irradiation range, various optical members may be used to change the distribution (size, shape, etc.) of the electromagnetic wave 62. For example, a rectangular core fiber having a geometric beam forming function may be used. In addition, as another form, a kaleidoscope with a plurality of mirrors attached to the inner surface of the cylinder may be arranged in the middle of the path of the electromagnetic wave 62. Furthermore, a diffraction lens, a fly-eye lens, or another optical lens may be used instead of the optical member, or the profile of the electromagnetic wave 62 may be changed.

In addition, only one electromagnetic wave source 60 is shown in FIG. 1, but two or more electromagnetic wave sources 60 may be provided. The two or more electromagnetic wave sources 60 may be the same electromagnetic wave source or different types. Electromagnetic wave source. The wavelength of the electromagnetic wave irradiated from the electromagnetic wave source 60 may be substantially single, or may be a plurality of wavelengths having a certain degree of amplitude. The power of the electromagnetic wave 62 is preferably such that the substrate 110 can be heated to a desired temperature in a required time. For example, when the temporary laminated body STt is formally crimped together, it is desirable to heat the lowermost semiconductor wafer 100 to the same temperature as the uppermost semiconductor wafer 100. Generally, the execution time of formal crimping is several seconds. Therefore, it is desirable that the electromagnetic wave 62 has a power capable of heating the substrate 110 to a level close to the second temperature T2 during the implementation of the formal crimping (within a few seconds).

As described above, the intermediate body 40 is a plate-shaped member having at least the absorption layer 46 that easily absorbs the electromagnetic wave 62. In FIG. 4, the intermediate body 40 having a single-layer structure including only the absorbing layer 46 that easily absorbs the electromagnetic wave 62 is illustrated. In addition, when the electromagnetic wave 62 is visible light or infrared, the materials that easily absorb the electromagnetic wave 62 include carbon, diamond-like carbon (DLC), silicon carbide (SiC), and silicon nitride (SiN). , Alumina (Al ₂ O ₃ ), ceramics, black nickel, black chromium, and resins in which these absorbing materials are dispersed.

Regarding this intermediate body 40, it is of course desirable to efficiently absorb the irradiated electromagnetic waves 62. In addition, during the packaging process, it is desired that the temporary laminated body STt (the temporary laminated body STt of the block B in the example in FIG. 4) to be officially crimped is heated, and on the other hand, it is desirable that heat is not transmitted to other wafer laminated bodies STc And the temporary layered body STt (the layered body of the blocks A and C in FIG. 4). Therefore, it is preferable that the intermediate body 40 has a structure in which heat is hard to be transmitted outside the target block or outside the irradiation range.

Specifically, as shown in FIG. 6, the intermediate body 40 may have a structure that includes a heat-insulating portion 42 that suppresses heat transfer in the surface direction. The heat-insulating portion 42 may be, for example, a portion filled with a heat-insulating material, or may be a gap portion formed by a groove or a hole. When the heat-insulating portion 42 is a gap formed by a hole, the hole can also be used as a suction hole for attracting and holding the substrate 110.

The arrangement pitch of the heat insulation portion 42 may be substantially the same as the arrangement pitch of the packaging block, or may be sufficiently smaller than the arrangement pitch of the packaging block. When the arrangement pitch of the heat-insulating portion 42 is the same as that of the packaging block, the heat-insulating portion 42 is ideally formed at a position corresponding to the boundary of the packaging block as shown in FIG. 6. With this configuration, it is possible to effectively prevent the input of heat to the adjacent package block or the semiconductor wafer 100 other than the heating target. In addition, when this structure is used and the intermediate body 40 is composed of a material having high heat conductivity, the heat is easily dispersed evenly in the block to be irradiated, so that it is easy to uniformly heat the entire semiconductor wafer 100 to be heated. .

In addition, in a case where the arrangement pitch of the heat insulation portion 42 is sufficiently small compared to the arrangement pitch of the package block, heat transfer to a range outside the range actually irradiated with the electromagnetic wave 62 is effectively prevented. As a result, the input of heat to the semiconductor wafer 100 other than the heating target is effectively prevented. In addition, in this case, it is not necessary to replace the intermediate body 40 according to the type of the substrate 110 (difference in the arrangement pitch of the package block), and thus the versatility of the intermediate body 40 is improved.

In addition, the heat transfer properties of the entire intermediate body 40 may be reduced without providing the heat insulation portion 42. If the heat transfer property of the intermediate body 40 is low, it is difficult to transfer heat to a portion other than the portion where the electromagnetic wave 62 is irradiated, so that heat input to the semiconductor wafer 100 outside the target can be effectively prevented. As a method of reducing the heat transfer property of the entire intermediate body 40, the intermediate body 40 may be formed of a low heat transfer material (for example, a resin in which an absorber is dispersed). In addition, as another embodiment, the wall thickness of the intermediate body 40 may be reduced to reduce the heat transfer properties of the entire intermediate body 40.

In the description so far, the intermediate body 40 has been described as a plate-shaped member. As shown in FIG. 7, the intermediate body 40 may be a coating film 44 (for example, a black body film) covering the surface of the platform 30. In this case, the surface of the platform 30 may be a flat surface, but a groove may be formed as shown in FIG. 7. By forming this groove, the heat transfer property in the plane direction is reduced, and heat input to the semiconductor wafer 100 outside the target can be prevented.

The intermediate body 40 may have a multilayer structure in which a plurality of layers are laminated in the thickness direction. For example, as shown in FIG. 8, the intermediate body 40 may have a multilayer structure in which a heat insulation layer 49, a heat transfer layer 48, and an absorption layer 46 are sequentially laminated from the platform 30 side. The absorbing layer 46 is a layer made of a material that easily absorbs electromagnetic waves 62. The heat transfer layer 48 is made of a material that easily transmits electromagnetic waves 62 and has high heat transfer properties. When the electromagnetic wave 62 is infrared, the heat transfer layer 48 is formed of silicon or the like, for example. The heat transfer layer 48 is preferably provided with a heat insulating portion 42 that suppresses heat transfer to a region outside the heating target. In addition, by providing the heat transfer layer 48, even if the heat transfer property of the absorption layer 46 is low, heat can be quickly dissipated within the range to be heated, so that the entire semiconductor wafer 100 to be heated can be uniformly heated.

The heat-insulating layer 49 includes a material that transmits electromagnetic waves 62 and has high heat-insulating properties, such as glass. By disposing a heat insulation layer 49 between the heat transfer layer 48 and the platform 30, the heat generated in the absorption layer 46 is prevented from flowing out to the platform 30, and thermal efficiency can be improved.

In addition, when the electromagnetic wave 62 includes a plurality of wavelengths, the absorption layer 46 may have a multilayer structure having a layer corresponding to each wavelength. For example, when the electromagnetic wave 62 includes electromagnetic waves of a certain wavelength λ1, λ2, λ3 (λ1 <λ2 <λ3), as shown in FIG. A multilayer structure in which an absorbing layer 46a, a second absorbing layer 46b having higher absorption sensitivity before and after the wavelength λ2, and a third absorbing layer 46c having higher absorption sensitivity before and after the wavelength λ3. By providing an absorbing layer having a high absorption sensitivity for each band in this manner, heat can be generated more efficiently. In addition, in this case, it is preferable to stack in the order that the absorption layer corresponding to the long wavelength is further away from the stage 30. In the above-mentioned example, it is preferable that the first absorbent layer 46a, the second absorbent layer 46b, and the third absorbent layer 46c are stacked in the order from the platform 30 side. The reason is that the longer the wavelength of the electromagnetic wave, the less the loss in the propagation process, and the longer the distance can be achieved.

The configurations of the intermediate 40 described so far can be appropriately combined. For example, in FIGS. 6 and 7, the intermediate body 40 is described as a single-layer structure, but the intermediate body 40 illustrated in FIGS. 6 and 7 may be changed to a multilayer structure as shown in FIG. 8 or 9. In addition, although the absorption layer 46 is shown as a single layer in FIG. 8, the absorption layer 46 of FIG. 8 may have a multilayer structure as shown in FIG. 9.

In any case, by providing an intermediate body 40 that absorbs electromagnetic waves 62 and generates heat between the platform 30 and the substrate 110, the substrate 110 can be locally heated even if the substrate 110 is a material that easily transmits and reflects electromagnetic waves 62. In addition, by performing such local heating (irradiation of electromagnetic waves 62) only in the packaging block that is subjected to the formal crimping process, the lowermost semiconductor wafer 100 can also be appropriately heated, and good packaging quality can be obtained. In addition, by locally heating the package block subjected to the formal crimping process, the temperature difference ΔT inside the laminate can be reduced, and the package quality of the plurality of semiconductor wafers 100 constituting one laminate can be made uniform.

On the other hand, in a package block that is not subjected to a formal crimping process, electromagnetic waves 62 are not irradiated. Therefore, it is possible to effectively prevent the temperature of the package region from rising, and even the semiconductor wafer 100 that is not subject to the informal crimping process due to heat. Degradation or deterioration.

Next, a manufacturing process of a semiconductor device using the packaging device 10 will be described. In the case of manufacturing a semiconductor device, a mounting step of placing the substrate 110 on the intermediate body 40 is performed first. Then, a bonding step of bonding the semiconductor wafer 100 to the upper surface of the substrate 110 using the package head 50 is performed. This bonding step is further roughly divided into a temporary crimping step and a full crimping step.

In the temporary crimping step, the packaging head 50 temporarily crimps and laminates a plurality of semiconductor wafers 100 in all the packaging blocks to form a temporary laminated body STt. Specifically, the package head 50 is heated to the first temperature T1 in advance. In this state, the platform 30 is first moved horizontally, and a packaging block 34 is disposed directly below the packaging head 50. Then, the package head 50 is lowered after attracting and holding the semiconductor wafer 100 carried by the wafer transfer unit 14 at its front end, and placing the semiconductor wafer 100 on the package (substrate 110 or other semiconductor wafer 100) with a first load F1 squeeze. Thereby, the NCF 108 of the semiconductor wafer 100 is softened, and the semiconductor wafer 100 is temporarily crimped. This temporary crimping operation is repeated several times to form a temporary laminated body STt in one package block. If a temporary laminated body STt is formed in one packaging block, the platform 30 moves in a horizontal direction such that the other packaging block is located directly below the packaging head 50. Then, the package head 50 is used again to form the temporary laminated body STt. In the following, the same processing is performed for all package blocks.

If a temporary laminated body STt is formed in all the packaging blocks, a formal crimping step is then performed. In the formal crimping step, a plurality of temporary laminated bodies STt are sequentially subjected to a formal crimping process. Specifically, the package head 50 switches the temperature from the first temperature T1 to the second temperature T2. In addition, in this state, the platform 30 is moved horizontally, and one packaging block is arranged directly below the packaging head 50. In this state, the package head 50 is lowered, and the upper surface of one temporary laminated body STt is pressed with the second load F2. Thereby, the plurality of semiconductor wafers 100 constituting the one temporary laminated body STt are formally pressure-bonded together.

Here, at the same time as the formal crimping process, a heating step of locally heating the packaging block in which the one temporary laminated body STt is arranged is also performed. Specifically, the range corresponding to the target package block (the area directly below the package head 50) in the intermediate body 40 is irradiated with the electromagnetic wave 62, and only the corresponding range is locally heated. Thereby, the temperature of the target range (irradiation range) in the intermediate body 40 rises, and the substrate 110 and the semiconductor wafer 100 on the substrate 110 that are in contact with the intermediate body 40 are also heated. In addition, by this, it is possible to perform the main compression bonding process in a state where the temperature difference between the upper layer and the lower layer of the temporary laminated body STt (the internal temperature difference ΔT of the laminated body) is small. As a result, the packaging quality of the semiconductor wafer 100 can be further improved.

If a temporary laminated body STt is formally crimped, the platform 30 moves in a horizontal direction such that the other packaging block is located directly below the packaging head 50. Then, heating and pressing of the temporary laminated body STt using the package head 50 and local heating of the intermediate body 40 by the electromagnetic wave 62 are performed again. Then, if the same processing is performed on all the package blocks, the manufacturing process of the semiconductor device ends.

As described above, according to the method for manufacturing a semiconductor device disclosed in this specification, a portion of the intermediate body 40 corresponding to the package block 34 on which the semiconductor wafer 100 on which the heating target is placed is irradiated with electromagnetic waves 62 and used. The electromagnetic wave 62 only heats the package block. Thereby, the semiconductor wafer 100 to be heated can be appropriately heated, and on the other hand, heat can be prevented from being input to the semiconductor wafer 100 not to be heated for a long time. In addition, since the electromagnetic wave 62 is absorbed by the intermediate body 40, it can be reliably heated locally regardless of the material of the substrate 110 (even if the substrate 110 is easily absorbed and reflects the electromagnetic wave 62).

The configurations described so far are all examples, and can be changed as appropriate. For example, in the above description, a substrate including sapphire glass is used as the substrate 110. As described above, in the packaging device disclosed in this specification, the material of the substrate 110 is not limited.

In the above description, the substrate 110 is heated by the electromagnetic wave 62 only when the temporary laminated body STt is formally crimped together. However, if necessary, the substrate 110 may be heated by the electromagnetic wave 62 during the temporary crimping. In addition, in the description, only a case where a plurality of semiconductor wafers 100 are laminated and packaged is exemplified, but the technology disclosed in this specification can of course be applied to a case where no laminate is packaged.

In the above description, the package head 50 or the irradiation unit 18 is provided as one. However, if necessary, a plurality of these may be provided, and a crimping process or heating of the intermediate body 40 by electromagnetic waves 62 may be performed at a plurality of locations at the same time. .

10‧‧‧Packaging device

12‧‧‧ Wafer Supply Unit

14‧‧‧ Wafer Handling Unit

16‧‧‧Joint Unit

18‧‧‧ irradiation unit

20‧‧‧Control Department

22‧‧‧Top

24‧‧‧ Grain Picker

26‧‧‧ transfer head

28‧‧‧Turntable

30‧‧‧platform

40‧‧‧ Intermediate

42‧‧‧Insulation

44‧‧‧ film

46‧‧‧ Absorptive layer

46a‧‧‧The first absorption layer

46b‧‧‧Second absorption layer

46c‧‧‧Third absorption layer

48‧‧‧ heat transfer layer

49‧‧‧ Insulation

50‧‧‧ package header

60‧‧‧ electromagnetic wave source

61‧‧‧Reflective surface

62‧‧‧ electromagnetic wave

63‧‧‧ aperture

100‧‧‧ semiconductor wafer

102, 104‧‧‧ electrode terminals

106‧‧‧ bump

108‧‧‧ Non-conductive film (NCF)

110‧‧‧ substrate

112‧‧‧electrode

Blocks A, B, C‧‧‧

Ra, Rb‧‧‧rotation axis

STc‧‧‧ Wafer Laminate

STt‧‧‧Temporary layered body

TE‧‧‧Cutting Tape

FIG. 1 is a diagram showing a configuration of a packaging device.

FIG. 2 is a diagram showing an example of a semiconductor device.

FIG. 3 is a diagram showing an example of a semiconductor wafer.

FIG. 4 is a diagram showing a state where a substrate is locally heated.

FIG. 5 is a diagram showing another example of the irradiation unit.

FIG. 6 is a diagram showing another configuration of the intermediate.

FIG. 7 is a diagram showing another configuration of the intermediate.

FIG. 8 is a diagram showing another configuration of the intermediate.

FIG. 9 is a diagram showing another configuration of the intermediate.

Claims (8)

A packaging device for manufacturing a semiconductor device by bonding a semiconductor wafer to a substrate or other semiconductor wafer, that is, a packaged body, and the packaging device is characterized by comprising: A platform having a first surface and a second surface opposite to the first surface; An intermediate between the first surface and the substrate; A package head capable of relatively moving with respect to the platform, and bonding the semiconductor wafer to the package body; and An irradiating unit, which irradiates the intermediate body from the second surface side of the platform with electromagnetic waves transmitted through the platform and absorbed by the intermediate body, The substrate is heated by the intermediate body absorbing the electromagnetic wave. The packaging device according to item 1 of the scope of patent application, wherein the intermediate body has a heat-insulating portion that suppresses heat transfer in the direction of the surface. The packaging device according to item 2 of the scope of patent application, wherein the heat insulation portion includes a gap portion formed by a groove or a hole extending in the horizontal direction in the intermediate body. The package device according to any one of claims 1 to 3, wherein the intermediate body is an absorbing layer that sequentially absorbs the electromagnetic wave from the first surface side, and A heat transfer layer that transmits electromagnetic waves and has high heat transfer properties, and a multilayer structure in which a heat insulation layer including a material that allows the transmission and low heat transfer properties is laminated in the thickness direction. The package device according to any one of claims 1 to 4, wherein the electromagnetic wave includes a plurality of bands, The intermediate includes a multilayer structure in which a plurality of absorption layers respectively provided for the plurality of wavelength bands are laminated in a thickness direction, The plurality of absorption layers are laminated in such a manner that the longer the corresponding wave band is, the farther away they are from the platform. The package device according to any one of claims 1 to 5, wherein a plurality of the semiconductor wafers are thermocompression bonded on the substrate, The irradiation unit includes a changing mechanism that changes at least one of an irradiation area of the electromagnetic wave and an irradiation position of the electromagnetic wave. The package device according to any one of claims 1 to 6, wherein the package head includes a temporary laminated body that heats a plurality of the semiconductor wafers in a state of temporary compression bonding, and Formally crimped heater, The temporary laminated body is heated together with the heater by irradiating the intermediate body with the irradiation unit. A method for manufacturing a semiconductor device, in which a semiconductor wafer is bonded to a substrate or another semiconductor wafer, that is, a package, to manufacture a semiconductor device, and the method for manufacturing a semiconductor device is characterized by comprising: A step of placing the substrate on the intermediate body placed on the first side of the platform; A bonding step of bonding the semiconductor wafer to the packaged body using a packaging head that is relatively movable with respect to the platform; and The intermediate body heating step irradiates the electromagnetic wave absorbed by the intermediate body and transmitted through the platform from an irradiation unit disposed on the opposite side of the package head across the platform while at least a part of the bonding step. Thereby, the intermediate is heated.