TW201917740A - Method for manufacturing laminate of inorganic substance layer capable of inhibiting the inorganic substance layer from breakage during the manufacturing process - Google Patents

Method for manufacturing laminate of inorganic substance layer capable of inhibiting the inorganic substance layer from breakage during the manufacturing process Download PDF

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TW201917740A
TW201917740A TW107135082A TW107135082A TW201917740A TW 201917740 A TW201917740 A TW 201917740A TW 107135082 A TW107135082 A TW 107135082A TW 107135082 A TW107135082 A TW 107135082A TW 201917740 A TW201917740 A TW 201917740A
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film
transparent conductive
support film
layer
producing
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TW107135082A
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松本圭祐
竹下翔也
河野文彦
酒井和也
安藤豪彦
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日商日東電工股份有限公司
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Abstract

Provided is a method for manufacturing a laminate of an inorganic substance layer, which includes: a step of disposing a first supporting film on one side in the thickness direction of a film body having a base film; a step of forming an inorganic substance layer under a vacuum condition on the other side in the thickness direction of the film body; a step of removing the first supporting film; a step of disposing a second supporting film on one side in the thickness direction of the film body; and a step of heating the inorganic substance layer. Furthermore, the first supporting film is provided with a moisture content of less than 2.5 [mu]g/m2.

Description

無機物層積層體之製造方法Method for producing inorganic layered layer body

本發明係關於一種無機物層積層體之製造方法、詳細而言為能夠較佳地用於光學用途之無機物層積層體之製造方法。The present invention relates to a method for producing an inorganic layered laminate, and more particularly to a method for producing an inorganic layered laminate which can be preferably used for optical applications.

先前,於透明塑膠膜形成有銦錫複合氧化物(ITO)等透明導電層之透明導電性膜被用於觸控面板用膜等光學用途。Conventionally, a transparent conductive film in which a transparent conductive layer such as indium tin composite oxide (ITO) is formed on a transparent plastic film is used for optical applications such as a film for a touch panel.

例如,於日本專利特開2008-251529號公報中,揭示有如下之附黏著劑層之透明導電性膜,即,其具有於透明塑膠膜之一面設置有非晶形透明導電性薄膜之非晶形透明性積層體、及於透明塑膠膜之另一面經由黏著劑層而設置之脫模膜。For example, Japanese Laid-Open Patent Publication No. 2008-251529 discloses a transparent conductive film having an adhesive layer, which has an amorphous transparent film provided with an amorphous transparent conductive film on one side of a transparent plastic film. The release layer and the release film provided on the other side of the transparent plastic film via the adhesive layer.

於上述附黏著劑層之透明導電性膜中,於透明塑膠膜之一面,於真空條件下藉由濺鍍而設置非晶形透明導電性薄膜,繼而,於透明塑膠膜之另一面,經由黏著層而配置特定之脫模膜。而且,於該附黏著劑層之透明導電性膜中,於藉由其後之加熱處理將非晶形透明導電性薄膜結晶化時,利用脫模膜抑制透明導電性膜之捲曲之產生。In the transparent conductive film with the adhesive layer, an amorphous transparent conductive film is provided on one surface of the transparent plastic film by sputtering under vacuum, and then, on the other side of the transparent plastic film, via an adhesive layer. And configure a specific release film. Further, in the transparent conductive film with the adhesive layer, when the amorphous transparent conductive film is crystallized by the subsequent heat treatment, the occurrence of curl of the transparent conductive film is suppressed by the release film.

然,近年來,為了光學特性或薄型化,可使用薄型聚環烯烴聚合物(COP)基材作為透明塑膠膜。薄型COP之機械強度較脆。因此,於在薄型COP基材於真空下利用濺鍍法形成非晶形透明導電薄膜之情形時,會產生因搬送時之衝擊或濺鍍時之放電而導致薄型COP基材變形並斷裂之不良情況。其結果為,生產效率較差。However, in recent years, a thin polycycloolefin polymer (COP) substrate can be used as the transparent plastic film for optical characteristics or thinning. The mechanical strength of the thin COP is relatively brittle. Therefore, when an amorphous transparent conductive film is formed by sputtering using a thin COP substrate under vacuum, there is a problem that the thin COP substrate is deformed and broken due to the impact during the transfer or the discharge at the time of sputtering. . As a result, production efficiency is poor.

因此,研究在形成非晶形透明導電性薄膜之前,預先將薄型COP基材利用上述脫模膜進行支持而補強。Therefore, it was investigated that the thin COP substrate was previously reinforced by the above-mentioned release film before forming the amorphous transparent conductive film.

然而,於上述文獻中,使用PET(polyethylene terephthalate,聚對苯二甲酸乙二酯)膜作為適於加熱處理時之脫模膜。由於該PET膜通常含水量較多,故而若於將薄型COP基材利用PET膜支持之狀態下,於真空下形成非晶形透明導電性薄膜,則水分(雜質)自PET膜表面蒸發。如此一來,會產生該水分被擷取至非晶形透明導電性薄膜(無機物層)而使非晶形透明導電性薄膜之特性降低之不良情況。However, in the above documents, a PET (polyethylene terephthalate) film is used as a release film suitable for heat treatment. Since the PET film usually has a large water content, if an amorphous transparent conductive film is formed under vacuum in a state where the thin COP substrate is supported by the PET film, moisture (impurities) evaporate from the surface of the PET film. As a result, the moisture is extracted into the amorphous transparent conductive film (inorganic layer) to deteriorate the characteristics of the amorphous transparent conductive film.

本發明之目的在於提供一種不斷裂地製造無機物層之特性之降低得以抑制之無機物層積層體之方法。SUMMARY OF THE INVENTION An object of the present invention is to provide a method for producing an inorganic layered body which is suppressed from being reduced in the properties of an inorganic layer without breaking.

本發明[1]包含一種無機物層積層體之製造方法,其包括:於具備基材膜之膜體之厚度方向一側配置第1支持膜之步驟;於上述膜體之厚度方向另一側於真空下形成無機物層之步驟;去除上述第1支持膜之步驟;於上述膜體之厚度方向一側配置第2支持膜之步驟;及加熱上述無機物層之步驟。The present invention [1] includes a method for producing an inorganic layered laminate, comprising: a step of disposing a first support film on a side in a thickness direction of a film body including a base film; and a thickness direction on the other side of the film body a step of forming an inorganic layer under vacuum; a step of removing the first support film; a step of disposing a second support film on a side in the thickness direction of the film; and a step of heating the inorganic layer.

根據該製造方法,於膜體配置於第1支持膜之狀態下,於真空下形成無機物層。因此,於搬送時或無機物層形成時,能夠抑制膜體之變形及斷裂。According to this production method, the inorganic layer is formed under vacuum in a state where the film body is placed on the first support film. Therefore, deformation or breakage of the film body can be suppressed at the time of conveyance or formation of the inorganic layer.

又,於形成無機物層之步驟之後、及加熱無機物層之步驟之前,去除第1支持膜,並配置第2支持膜。因此,能夠分別採用適於形成無機物層時之第1支持膜、及適於加熱時之第2支持膜。因此,於形成無機物層時,能夠避免採用對真空下之無機物層之形成造成不良影響之支持膜,因此能夠抑制所要形成之無機物層之特性之降低。Further, after the step of forming the inorganic layer and before the step of heating the inorganic layer, the first supporting film is removed, and the second supporting film is disposed. Therefore, the first support film suitable for forming the inorganic layer and the second support film suitable for heating can be used. Therefore, when the inorganic layer is formed, it is possible to avoid the use of the support film which adversely affects the formation of the inorganic layer under vacuum, and therefore it is possible to suppress the deterioration of the characteristics of the inorganic layer to be formed.

本發明[2]包含如[1]之無機物層積層體之製造方法,其中上述第1支持膜之含水量未達2.5 μg/m2The invention [2] contains the method for producing an inorganic layered product according to [1], wherein the first support film has a water content of less than 2.5 μg/m 2 .

根據該製造方法,由於第1支持膜之含水量較低,故而於在真空下形成無機物層時,能夠減少自第1支持膜蒸發之水分。因此,能夠減少被擷取至所要形成之無機物層之水分,而能夠抑制無機物層之特性之降低。According to this production method, since the water content of the first support film is low, when the inorganic layer is formed under vacuum, the moisture evaporated from the first support film can be reduced. Therefore, the moisture which is extracted to the inorganic layer to be formed can be reduced, and the deterioration of the characteristics of the inorganic layer can be suppressed.

本發明[3]包含如[1]或[2]之無機物層積層體之製造方法,其中上述第1支持膜之寬度10 mm時之降伏強度為30 MPa以下,第1支持膜之斷裂伸長率為80%以上。The method of producing an inorganic layered product according to the above [1] or [2], wherein the first support film has a fall strength of 10 MPa or less at a width of 10 mm, and an elongation at break of the first support film More than 80%.

根據該製造方法,第1支持膜能夠以較小之張力較長地延伸,且能夠降低因張力而產生之殘留應力。因此,於第1支持膜對所支持之膜體作用張力之情形時,能夠抑制第1支持膜對膜體賦予殘留應力。其結果為,能夠抑制膜體中之捲曲之產生。According to this manufacturing method, the first support film can be extended with a small tension and the residual stress due to the tension can be reduced. Therefore, when the first support film acts on the supported film body, it is possible to suppress the first support film from imparting residual stress to the film body. As a result, it is possible to suppress the occurrence of curl in the film body.

本發明[4]包含如[1]至[3]中任一項之無機物層積層體之製造方法,其中上述第1支持膜為延伸聚丙烯膜。The method of producing an inorganic layered laminate according to any one of [1] to [3] wherein the first support film is a stretched polypropylene film.

根據該製造方法,由於第1支持膜係低含水量,且降伏強度較低,伸長率良好,故而於無機物層之形成時,能夠抑制水分之產生,並且能夠抑制膜體之捲曲之產生。According to this production method, since the first support film has a low water content and a low drop strength and a good elongation, it is possible to suppress the generation of moisture during the formation of the inorganic layer and to suppress the occurrence of curl of the film.

本發明[5]包含如[1]至[4]中任一項之無機物層積層體之製造方法,其中上述第1支持膜與上述膜體之剝離力為0.005 N/50 mm以上且0.50 N/50 mm以下。The method for producing an inorganic layered product according to any one of [1] to [4] wherein the peeling force of the first support film and the film body is 0.005 N/50 mm or more and 0.50 N. /50 mm or less.

根據該製造方法,由於第1支持膜與膜體之剝離力為0.005 N/50 mm以上,故而能夠抑制於其等之間產生氣泡,而抑制剝離。又,由於剝離力為0.50 N/50 mm以下,故而能夠於去除第1支持膜時抑制基材膜之斷裂。According to this production method, since the peeling force of the first support film and the film body is 0.005 N/50 mm or more, it is possible to suppress generation of bubbles between the first support film and the like, and to suppress peeling. Further, since the peeling force is 0.50 N/50 mm or less, it is possible to suppress breakage of the base film when the first support film is removed.

本發明[6]包含如[1]至[5]中任一項之無機物層積層體之製造方法,其中上述第2支持膜為聚對苯二甲酸乙二酯膜。The method of producing an inorganic layered product according to any one of [1] to [5] wherein the second support film is a polyethylene terephthalate film.

根據該製造方法,由於第2支持膜之熱縮率較低,故而能夠更確實地抑制無機物層積層體之捲曲。According to this production method, since the heat shrinkage rate of the second support film is low, the curl of the inorganic layer laminate can be more reliably suppressed.

本發明[7]包含如[1]至[6]中任一項之無機物層積層體之製造方法,其中上述基材膜為環烯烴聚合物膜。The method of producing an inorganic layered laminate according to any one of [1] to [6] wherein the substrate film is a cycloolefin polymer film.

根據該製造方法,能夠不斷裂地製造具備環烯烴聚合物膜作為基材膜之無機物層積層體。According to this production method, the inorganic layered laminate having the cycloolefin polymer film as the base film can be produced without breaking.

本發明[8]包含如[1]至[7]中任一項之無機物層積層體之製造方法,其中上述於真空下形成無機物層之步驟係利用濺鍍法於真空下形成無機物層之步驟。The method of producing the inorganic layered layer according to any one of [1] to [7] wherein the step of forming the inorganic layer under vacuum is a step of forming an inorganic layer under vacuum by sputtering. .

根據該製造方法,能夠更確實地形成厚度較薄之無機物層(濺鍍膜)。According to this manufacturing method, the inorganic material layer (sputter film) having a small thickness can be formed more reliably.

本發明[9]包含如[1]至[8]中任一項之無機物層積層體之製造方法,其中上述無機物層含有銦-錫複合氧化物。The method of producing an inorganic layered laminate according to any one of [1] to [8] wherein the inorganic layer contains an indium-tin composite oxide.

根據該製造方法,能夠將具備透明導電性之無機物層之透明導電性膜於透明性及導電性良好之狀態下獲得。According to this production method, the transparent conductive film having the inorganic layer having transparent conductivity can be obtained in a state in which transparency and conductivity are good.

根據本發明之無機物層積層體之製造方法,能夠不斷裂地製造無機物層之特性之降低得以抑制之無機物層積層體。According to the method for producing an inorganic layered layered body of the present invention, the inorganic layered layered body in which the deterioration of the characteristics of the inorganic layer is suppressed can be produced without breaking.

於圖1A中,紙面上下方向係上下方向(厚度方向、第1方向),紙面上側為上側(厚度方向一側、第1方向一側),紙面下側為下側(厚度方向另一側、第1方向另一側)。又,紙面左右方向及深度方向係與上下方向正交之面方向。具體而言,依據各圖之方向箭頭。再者,並不意圖藉由該等方向之定義來限定本發明之無機物層積層體之製造時及使用時之朝向。In FIG. 1A, the upper and lower sides of the paper are in the vertical direction (thickness direction, first direction), the upper side of the paper is the upper side (the side in the thickness direction, the side in the first direction), and the lower side of the paper is the lower side (the other side in the thickness direction, The first direction is the other side). Further, the left-right direction and the depth direction of the paper surface are the direction orthogonal to the vertical direction. Specifically, the direction arrows are used in accordance with the respective figures. Furthermore, it is not intended to limit the orientation of the inorganic laminate layer of the present invention at the time of manufacture and use by definition of the directions.

<一實施形態> 參照圖1A-G,對作為本發明之無機物層積層體之製造方法之一實施形態的結晶化透明導電性膜1之製造方法進行說明。<Embodiment> A method for producing the crystallized transparent conductive film 1 which is one embodiment of the method for producing an inorganic layered laminate of the present invention will be described with reference to Figs. 1A to 1G.

結晶化透明導電性膜1之製造方法例如依序包括:第1步驟,其係準備作為基材膜之一例之透明基材膜2;第2步驟,其係形成膜體3;第3步驟,其係於膜體3之上側配置第1支持膜4;第4步驟,其係於膜體3之下側,於真空下形成作為無機物層之一例之非晶形透明導電層5;第5步驟,其係去除第1支持膜4;第6步驟,其係於膜體3之上側配置第2支持膜7;及第7步驟,其係加熱非晶形透明導電層5。結晶化透明導電性膜1之製造方法係於第1步驟~第7步驟中全部利用捲對捲(roll to roll)步驟實施。The method for producing the crystallized transparent conductive film 1 includes, for example, a first step of preparing a transparent substrate film 2 as an example of a base film; a second step of forming a film body 3; and a third step; The first support film 4 is disposed on the upper side of the film body 3, and the fourth step is formed on the lower side of the film body 3 to form an amorphous transparent conductive layer 5 as an example of the inorganic layer under vacuum; This is to remove the first support film 4; the sixth step is to arrange the second support film 7 on the upper side of the film body 3; and the seventh step of heating the amorphous transparent conductive layer 5. The method for producing the crystallized transparent conductive film 1 is carried out in all of the first to seventh steps by a roll to roll step.

(第1步驟) 於第1步驟中,如圖1A所示,準備透明基材膜2。(First Step) In the first step, as shown in FIG. 1A, the transparent base film 2 is prepared.

透明基材膜2係用以確保結晶化透明導電性膜1之機械強度之透明之基材。即,透明基材膜2將結晶化透明導電層12與下述硬塗層(第1硬塗層8、第2硬塗層9)及光學調整層10一起支持。The transparent base film 2 is a base material for ensuring transparency of the mechanical strength of the crystallized transparent conductive film 1. In other words, the transparent base film 2 supports the crystallized transparent conductive layer 12 together with the hard coat layer (the first hard coat layer 8 and the second hard coat layer 9) and the optical adjustment layer 10 described below.

透明基材膜2係具有膜形狀(包含片形狀)且具有透明性之高分子膜。作為透明基材膜2之材料,可列舉:例如聚對苯二甲酸乙二酯(PET)、聚對苯二甲酸丁二酯、聚萘二甲酸乙二酯等聚酯樹脂;例如聚甲基丙烯酸酯等(甲基)丙烯酸系樹脂(丙烯酸系樹脂及/或甲基丙烯酸系樹脂);例如聚乙烯、聚丙烯、環烯烴聚合物(例如降𦯉烯類聚合物、環戊二烯類聚合物、環己二烯類聚合物)等烯烴樹脂;例如聚碳酸酯樹脂、聚醚碸樹脂、聚芳酯樹脂、三聚氰胺樹脂、聚醯胺樹脂、聚醯亞胺樹脂、纖維素樹脂、聚苯乙烯樹脂等。透明基材膜2可單獨使用或併用2種以上。就透明性、低雙折射性等光學特性之觀點而言,可較佳地列舉烯烴樹脂,可更佳地列舉環烯烴聚合物(COP)。The transparent base film 2 is a polymer film having a film shape (including a sheet shape) and having transparency. Examples of the material of the transparent base film 2 include polyester resins such as polyethylene terephthalate (PET), polybutylene terephthalate, and polyethylene naphthalate; for example, polymethyl (meth)acrylic resin (acrylic resin and/or methacrylic resin) such as acrylate; for example, polyethylene, polypropylene, cycloolefin polymer (for example, norbornene polymer, cyclopentadiene polymerization) Olefin resin such as a cyclohexadiene polymer; for example, a polycarbonate resin, a polyether oxime resin, a polyarylate resin, a melamine resin, a polyamide resin, a polyimide resin, a cellulose resin, a polyphenylene Vinyl resin, etc. The transparent base film 2 may be used alone or in combination of two or more. The olefin resin is preferably exemplified from the viewpoint of optical properties such as transparency and low birefringence, and a cycloolefin polymer (COP) can be more preferably exemplified.

透明基材膜2之全光線透過率(JIS K 7375-2008)例如為80%以上,較佳為85%以上。The total light transmittance (JIS K 7375-2008) of the transparent base film 2 is, for example, 80% or more, preferably 85% or more.

透明基材膜2之厚度例如為200 μm以下,較佳為150 μm以下,較佳為125 μm以下,又,例如為10 μm以上,較佳為25 μm以上。若透明基材膜2之厚度為上述上限以下,則能夠謀求結晶化透明導電性膜1之薄膜化。若透明基材膜2之厚度為上述下限以上,則結晶化透明導電性膜1之機械強度優異。The thickness of the transparent base film 2 is, for example, 200 μm or less, preferably 150 μm or less, preferably 125 μm or less, and further, for example, 10 μm or more, and preferably 25 μm or more. When the thickness of the transparent base film 2 is not more than the above upper limit, the thin film of the crystallized transparent conductive film 1 can be formed. When the thickness of the transparent base film 2 is at least the above lower limit, the crystallized transparent conductive film 1 is excellent in mechanical strength.

於本發明中,關於膜之厚度,於例如厚度為1 μm以上之情形時,能夠使用微計測器(micro-gauge)式厚度計進行測定,於例如厚度未達1 μm之情形時,能夠使用瞬時多重測光系統進行測定。In the present invention, the thickness of the film can be measured using a micro-gauge type thickness gauge when the thickness is, for example, 1 μm or more, and can be used, for example, when the thickness is less than 1 μm. The instantaneous multiple metering system performs the measurement.

再者,透明基材膜2亦可如圖1A之假想線所示般於其下表面具備保護膜15。Further, the transparent base film 2 may be provided with a protective film 15 on the lower surface thereof as shown by the imaginary line in FIG. 1A.

(第2步驟) 於第2步驟中,如圖1B所示,形成膜體3。(Second Step) In the second step, as shown in FIG. 1B, the film body 3 is formed.

具體而言,製作依序具備第1硬塗層8、透明基材膜2、第2硬塗層9及光學調整層10之膜體3。Specifically, the film body 3 including the first hard coat layer 8, the transparent base film 2, the second hard coat layer 9, and the optical adjustment layer 10 is sequentially formed.

首先,於透明基材膜2之上表面及下表面,設置第1硬塗層8及第2硬塗層9。First, the first hard coat layer 8 and the second hard coat layer 9 are provided on the upper surface and the lower surface of the transparent base film 2.

例如,藉由在透明基材膜2之上表面及下表面之各者濕式塗佈硬塗組合物,然後進行乾燥,而於透明基材膜2之上表面及下表面之各者形成硬塗層(第1硬塗層8及第2硬塗層9)。For example, the hard coating composition is wet-coated on each of the upper surface and the lower surface of the transparent substrate film 2, and then dried to form a hard surface on each of the upper surface and the lower surface of the transparent substrate film 2. Coating (first hard coat layer 8 and second hard coat layer 9).

具體而言,例如,製備將硬塗組合物(於下文敍述)利用溶劑進行稀釋所得之稀釋液(清漆),繼而,將稀釋液塗佈於透明基材膜2之上表面及下表面,並將稀釋液進行乾燥。Specifically, for example, a diluent (varnish) obtained by diluting a hard coat composition (described later) with a solvent is prepared, and then the diluent is applied onto the upper surface and the lower surface of the transparent base film 2, and The diluent is dried.

其後,於硬塗組合物含有活性能量線硬化性樹脂之情形時,藉由在稀釋液之乾燥後照射活性能量線,而使活性能量線硬化性樹脂硬化。Thereafter, when the hard coat composition contains the active energy ray-curable resin, the active energy ray-curable resin is cured by irradiating the active energy ray after drying the diluted solution.

硬塗組合物含有樹脂。The hard coat composition contains a resin.

作為樹脂,例如可列舉:硬化性樹脂、熱塑性樹脂(例如聚烯烴樹脂)等,可較佳地列舉硬化性樹脂。Examples of the resin include a curable resin, a thermoplastic resin (for example, a polyolefin resin), and the like, and a curable resin is preferably used.

作為硬化性樹脂,例如可列舉藉由活性能量線(具體而言,紫外線、電子束等)之照射而硬化之活性能量線硬化性樹脂、例如藉由加熱而硬化之熱固性樹脂等,可較佳地列舉活性能量線硬化性樹脂。Examples of the curable resin include an active energy ray-curable resin which is cured by irradiation with an active energy ray (specifically, ultraviolet rays, electron beams, etc.), for example, a thermosetting resin which is cured by heating, and the like. The active energy ray-curable resin is listed.

關於活性能量線硬化性樹脂,例如可列舉於分子中包含具有聚合性碳-碳雙鍵之官能基之聚合物。作為此種官能基,例如可列舉:乙烯基、(甲基)丙烯醯基(甲基丙烯醯基及/或丙烯醯基)等。The active energy ray-curable resin may, for example, be a polymer containing a functional group having a polymerizable carbon-carbon double bond in its molecule. Examples of such a functional group include a vinyl group, a (meth) acrylonitrile group (methacryl fluorenyl group and/or an acryl fluorenyl group).

作為活性能量線硬化性樹脂,具體而言,例如可列舉丙烯酸胺基甲酸酯、環氧丙烯酸酯等(甲基)丙烯酸系紫外線硬化性樹脂。Specific examples of the active energy ray-curable resin include (meth)acrylic ultraviolet curable resins such as urethane acrylate and epoxy acrylate.

又,作為除活性能量線硬化性樹脂以外之硬化性樹脂,例如可列舉:胺基甲酸酯樹脂、三聚氰胺樹脂、醇酸樹脂、矽氧烷系聚合物、有機矽烷縮合物等。In addition, examples of the curable resin other than the active energy ray-curable resin include a urethane resin, a melamine resin, an alkyd resin, a siloxane polymer, and an organic decane condensate.

該等樹脂可單獨使用或併用2種以上。These resins may be used alone or in combination of two or more.

硬塗組合物亦可進而含有粒子。藉此,能夠將硬塗層設為具有耐黏連特性之抗黏連層。The hard coat composition may further contain particles. Thereby, the hard coat layer can be set as an anti-blocking layer having blocking resistance.

作為粒子,可列舉無機粒子、有機粒子等。作為無機粒子,例如可列舉:氧化矽粒子;包含例如氧化鋯、氧化鈦、氧化鋅、氧化錫等之金屬氧化物粒子;例如碳酸鈣等碳酸鹽粒子等。作為有機粒子,例如可列舉交聯丙烯酸系樹脂粒子等。粒子可單獨使用或併用2種以上。Examples of the particles include inorganic particles, organic particles, and the like. Examples of the inorganic particles include cerium oxide particles; metal oxide particles containing, for example, zirconia, titanium oxide, zinc oxide, and tin oxide; and carbonate particles such as calcium carbonate. Examples of the organic particles include crosslinked acrylic resin particles and the like. The particles may be used singly or in combination of two or more.

於硬塗組合物中,可進而含有調平劑、觸變劑、抗靜電劑等公知之添加劑。The hard coating composition may further contain a known additive such as a leveling agent, a thixotropic agent, or an antistatic agent.

繼而,於第2硬塗層9之下表面,設置光學調整層10。Then, on the lower surface of the second hard coat layer 9, an optical adjustment layer 10 is provided.

例如,藉由在第2硬塗層9之下表面濕式塗佈光學調整組合物,然後進行乾燥,而於第2硬塗層9之下表面形成光學調整層10。For example, the optical adjustment layer 10 is formed on the lower surface of the second hard coat layer 9 by wet coating the optical adjustment composition on the lower surface of the second hard coat layer 9 and then drying.

具體而言,例如,視需要製備將光學調整組合物利用溶劑進行稀釋所得之稀釋液,繼而,將稀釋液塗佈於第2硬塗層9之下表面,並將稀釋液進行乾燥。Specifically, for example, a diluent obtained by diluting the optically adjusting composition with a solvent is prepared as needed, and then the diluted solution is applied onto the lower surface of the second hard coat layer 9, and the diluted solution is dried.

於光學調整組合物含有活性能量線硬化性樹脂之情形時,藉由在稀釋液之乾燥後照射活性能量線,而使活性能量線硬化性樹脂硬化。When the optical adjustment composition contains an active energy ray-curable resin, the active energy ray-curable resin is cured by irradiating the active energy ray after drying the diluent.

光學調整組合物含有樹脂,較佳為含有樹脂及粒子。The optical conditioning composition contains a resin, preferably containing a resin and particles.

作為樹脂,並無特別限定,可列舉與硬塗組合物中所使用之樹脂相同者。樹脂可單獨使用或併用2種以上。可較佳地列舉硬化性樹脂,可更佳地列舉活性能量線硬化性樹脂。The resin is not particularly limited, and examples thereof are the same as those used in the hard coat composition. The resin may be used singly or in combination of two or more. A curable resin is preferably exemplified, and an active energy ray-curable resin can be more preferably exemplified.

樹脂之含有比率係相對於光學調整組合物,例如為10質量%以上,較佳為25質量%以上,又,例如為95質量%以下,較佳為60質量%以下。The content ratio of the resin is, for example, 10% by mass or more, preferably 25% by mass or more, and for example, 95% by mass or less, preferably 60% by mass or less, based on the optically-adjusting composition.

作為粒子,可根據光學調整層所要求之折射率而選擇較佳之材料,例如可列舉與硬塗組合物中所使用之粒子相同者。粒子可單獨使用或併用2種以上。可較佳地列舉無機粒子,可更佳地列舉金屬氧化物粒子,可進而較佳地列舉氧化鋯粒子(ZnO2 )。As the particles, a preferable material can be selected depending on the refractive index required for the optical adjustment layer, and for example, the same as those used in the hard coat composition can be mentioned. The particles may be used singly or in combination of two or more. The inorganic particles are preferably exemplified, and metal oxide particles are more preferably exemplified, and zirconia particles (ZnO 2 ) are further preferably exemplified.

粒子之含有比率係相對於光學調整組合物,例如為5質量%以上,較佳為40質量%以上,又,例如為90質量%以下,較佳為75質量%以下。The content ratio of the particles is, for example, 5% by mass or more, preferably 40% by mass or more, and for example, 90% by mass or less, preferably 75% by mass or less, based on the optically-adjusting composition.

於光學調整組合物中,可進而含有調平劑、觸變劑、抗靜電劑等公知之添加劑。The optical adjustment composition may further contain a known additive such as a leveling agent, a thixotropic agent, or an antistatic agent.

藉此,獲得具備光學調整層10、配置於光學調整層10之上之第2硬塗層9、配置於第2硬塗層9之上之透明基材膜2、及配置於透明基材膜2之上之第1硬塗層8的膜體3(膜積層體)。Thereby, the optical adjustment layer 10, the second hard coat layer 9 disposed on the optical adjustment layer 10, the transparent base film 2 disposed on the second hard coat layer 9, and the transparent base film are obtained. The film body 3 (film laminate) of the first hard coat layer 8 on the top of 2.

第1硬塗層8及第2硬塗層9係用以於積層有複數個結晶化透明導電性膜1之情形時等,使結晶化透明導電性膜1之表面(結晶化透明導電層12之表面)不易產生擦傷之擦傷保護層。又,亦可設為用以對結晶化透明導電性膜1賦予耐黏連性之抗黏連層。The first hard coat layer 8 and the second hard coat layer 9 are used to crystallize the surface of the transparent conductive film 1 (the crystallized transparent conductive layer 12) when a plurality of crystallized transparent conductive films 1 are laminated. Surface) A scratch protective layer that is less prone to scratching. Moreover, it is also possible to provide an anti-blocking layer for imparting blocking resistance to the crystallized transparent conductive film 1.

例如就耐擦傷性之觀點而言,各硬塗層之厚度分別例如為0.5 μm以上,較佳為1 μm以上,又,例如為10 μm以下,較佳為3 μm以下。For example, the thickness of each hard coat layer is, for example, 0.5 μm or more, preferably 1 μm or more, and is, for example, 10 μm or less, preferably 3 μm or less.

光學調整層10係如下之層,即,其為了一面抑制結晶化透明導電層12中之配線圖案之視認,一面於結晶化透明導電性膜1中確保優異之透明性,而調整結晶化透明導電性膜1之光學物性(例如,折射率)。The optical adjustment layer 10 is a layer that adjusts the crystallized transparent conductive film 1 to ensure excellent transparency while suppressing the visibility of the wiring pattern in the crystallized transparent conductive layer 12. Optical properties (for example, refractive index) of the film 1.

光學調整層10之折射率例如為1.6以上,較佳為1.8以下。The refractive index of the optical adjustment layer 10 is, for example, 1.6 or more, preferably 1.8 or less.

光學調整層10之厚度例如為50 nm以上,較佳為80 nm以上,又,例如為300 nm以下,較佳為150 nm以下。The thickness of the optical adjustment layer 10 is, for example, 50 nm or more, preferably 80 nm or more, and is, for example, 300 nm or less, preferably 150 nm or less.

膜體3之厚度例如為15 μm以上,較佳為25 μm以上,又,例如為200 μm以下,較佳為100 μm以下,更佳為50 μm以下。The thickness of the film body 3 is, for example, 15 μm or more, preferably 25 μm or more, and is, for example, 200 μm or less, preferably 100 μm or less, and more preferably 50 μm or less.

再者,透明基材膜2係於在其下表面具備保護膜15之情形時,於第2硬塗層9之形成之前,將保護膜15藉由剝離、熔解等而去除。When the transparent base film 2 is provided with the protective film 15 on the lower surface thereof, the protective film 15 is removed by peeling, melting, or the like before the formation of the second hard coat layer 9.

(第3步驟) 於第3步驟中,如圖1C所示,於膜體3之上側配置第1支持膜4。(Third Step) In the third step, as shown in FIG. 1C, the first support film 4 is disposed on the upper side of the film body 3.

具體而言,以第1硬塗層8之上表面與第1支持膜4之下表面接觸之方式,於膜體3之上表面配置第1支持膜4。藉此,膜體3貼合於第1支持膜4。Specifically, the first support film 4 is placed on the upper surface of the film body 3 so that the upper surface of the first hard coat layer 8 is in contact with the lower surface of the first support film 4. Thereby, the film body 3 is bonded to the first support film 4.

第1支持膜4之配置較佳為於大氣下實施。The arrangement of the first support film 4 is preferably carried out under the atmosphere.

第1支持膜4係於在真空下形成非晶形透明導電層5之第4步驟中支持透明基材膜2。The first support film 4 supports the transparent base film 2 in the fourth step of forming the amorphous transparent conductive layer 5 under vacuum.

第1支持膜4之下表面較佳為具備黏性(黏著性)。藉此,能夠將第1支持膜4與膜體3直接貼合。The lower surface of the first support film 4 is preferably viscous (adhesive). Thereby, the first support film 4 and the film body 3 can be directly bonded together.

第1支持膜4之降伏強度例如低於第2支持膜7(於下文敍述)之降伏強度,具體而言,於寬度10 mm時,例如為30 MPa以下,較佳為10 MPa以下。又,第1支持膜4之斷裂伸長率例如大於第2支持膜之斷裂伸長率,具體而言,例如為80%以上,較佳為100%以上。The fall strength of the first support film 4 is, for example, lower than the fall strength of the second support film 7 (described later). Specifically, when the width is 10 mm, it is, for example, 30 MPa or less, preferably 10 MPa or less. Further, the elongation at break of the first support film 4 is, for example, greater than the elongation at break of the second support film, and specifically, for example, 80% or more, preferably 100% or more.

若第1支持膜4之降伏強度為上述上限以下,又,第1支持膜4之斷裂伸長率為上述下限以上,則第1支持膜4能夠以較小之張力較長地延伸,且能夠降低因張力而產生之殘留應力。因此,即便於在捲對捲步驟中,對第1-支持膜積層體21(於下文敍述)較強地作用搬送方向之張力之情形時,亦能夠降低殘留於第1支持膜4之殘留應力,因此能夠使第1支持膜4對膜體3賦予之殘留應力降低。其結果為,能夠於膜體3中抑制捲曲之產生。When the fall strength of the first support film 4 is equal to or less than the above-described upper limit, and the elongation at break of the first support film 4 is at least the above lower limit, the first support film 4 can be extended with a small tension and can be lowered. Residual stress due to tension. Therefore, even in the case where the first support film laminate 21 (described later) strongly acts on the tension in the transport direction in the roll-to-roll step, the residual stress remaining in the first support film 4 can be reduced. Therefore, the residual stress applied to the film body 3 by the first support film 4 can be lowered. As a result, the occurrence of curl can be suppressed in the film body 3.

降伏應力及斷裂伸長率能夠藉由如下方式進行測定,即,將測定對象膜(例如,第1支持膜4)切斷為寬度10 mm×長度10 mm,並將其設置於測定裝置(島津製作所公司製造,商品名「Autograph AG-I 10KN」),於5 mm/s至100 mm/s之拉伸速度之條件下進行拉伸。The undulation stress and the rupture elongation can be measured by cutting the measurement target film (for example, the first support film 4) to a width of 10 mm × a length of 10 mm, and setting it on a measuring device (Shimadzu Corporation) It is manufactured by the company under the trade name "Autograph AG-I 10KN" and stretched at a stretching speed of 5 mm/s to 100 mm/s.

第1支持膜4之含水量例如低於第2支持膜7(於下文敍述)之含水量,例如未達2.5 μg/m2 ,較佳為1.0 μg/m2 以下。若第1支持膜4之含水量為上述上限以下,則於在真空下形成非晶形透明導電層5時,能夠確實地減少自第1支持膜4之下表面(露出面)蒸發之水分。因此,能夠減少被擷取至所要形成之非晶形透明導電層5之水分(雜質),而能夠抑制非晶形透明導電層5(進而,結晶化透明導電層12)之特性(例如,導電性、透明性)之降低。The water content of the first support film 4 is, for example, lower than the water content of the second support film 7 (described later), for example, less than 2.5 μg/m 2 , preferably 1.0 μg/m 2 or less. When the water content of the first support film 4 is not more than the above upper limit, when the amorphous transparent conductive layer 5 is formed under vacuum, the moisture evaporated from the lower surface (exposed surface) of the first support film 4 can be surely reduced. Therefore, the moisture (impurities) drawn to the amorphous transparent conductive layer 5 to be formed can be reduced, and the characteristics of the amorphous transparent conductive layer 5 (and, further, the crystallized transparent conductive layer 12) can be suppressed (for example, conductivity, Reduced transparency).

含水量能夠利用卡氏(Karl Fischer)水分測定法進行測定。具體而言,能夠使用將利用加熱氣化法(150℃)而產生之氣體導入至滴定槽內之卡氏水分測定裝置進行測定。The water content can be determined by Karl Fischer moisture measurement. Specifically, it can be measured using a Karl Fischer measuring device that introduces a gas generated by a heating vaporization method (150 ° C) into a titration tank.

第1支持膜4之線熱膨脹係數例如超過2.0×10-5 /℃,較佳為1.5×10-4 /℃以上,又,例如為1.0×10-2 /℃以下。The linear thermal expansion coefficient of the first support film 4 is, for example, more than 2.0 × 10 -5 / ° C, preferably 1.5 × 10 -4 / ° C or more, and further, for example, 1.0 × 10 -2 / ° C or less.

作為第1支持膜4之材料,例如可列舉烯烴樹脂,可更佳地列舉延伸聚丙烯(OPP)。OPP膜係低含水量,且降伏強度較低,伸長率良好。因此,於非晶形透明導電層5之形成時,能夠更確實地抑制水分(雜質)之產生。與此同時,由於起因於捲對捲步驟之張力之殘留應力較低,故而能夠抑制膜體3之捲曲之產生。進而,由於OPP膜具備黏著性,故而能夠不經由黏著劑層而於膜體3之上表面直接配置(貼合)第1支持膜4,且能夠使膜體3與第1支持膜4之剝離力變得良好。The material of the first support film 4 is, for example, an olefin resin, and more preferably an extended polypropylene (OPP). The OPP film has a low water content, a low drop strength, and a good elongation. Therefore, at the time of formation of the amorphous transparent conductive layer 5, generation of moisture (impurities) can be more reliably suppressed. At the same time, since the residual stress due to the tension of the roll-to-roll step is low, the occurrence of curl of the film 3 can be suppressed. Further, since the OPP film has adhesiveness, the first support film 4 can be directly placed (bonded) on the upper surface of the film body 3 without passing through the adhesive layer, and the film body 3 can be peeled off from the first support film 4. The force has become good.

藉此,獲得具備膜體3及配置於膜體3之上之第1支持膜4之第1-支持膜積層體21。Thereby, the first support film laminate 21 including the film body 3 and the first support film 4 disposed on the film body 3 is obtained.

於第1-支持膜積層體21中,膜體3與第1支持膜4之剝離力例如為0.50 N/50 mm以下,較佳為0.20 N/50 mm以下,又,例如為0.005 N/50 mm以上,較佳為0.15 N/50 mm以上。若剝離力為上述上限以下,則於下述第1支持膜4之去除步驟中,能夠將第1支持膜4自非晶形透明導電性膜6容易地剝離,而能夠抑制透明基材膜2之斷裂。又,若剝離力為上述下限以上,則於第1支持膜4之配置時或非晶形透明導電層5之形成時,能夠於膜體3與第1支持膜4之間抑制氣泡之產生及增大,而能夠防止其等之剝離及脫落。In the first support film laminate 21, the peeling force of the film body 3 and the first support film 4 is, for example, 0.50 N/50 mm or less, preferably 0.20 N/50 mm or less, and further, for example, 0.005 N/50. Above mm, preferably 0.15 N/50 mm or more. When the peeling force is equal to or less than the above-described upper limit, the first support film 4 can be easily peeled off from the amorphous transparent conductive film 6 in the removal step of the first support film 4 described below, and the transparent base film 2 can be suppressed. fracture. In addition, when the peeling force is equal to or higher than the lower limit, it is possible to suppress the generation and increase of bubbles between the film body 3 and the first support film 4 during the arrangement of the first support film 4 or the formation of the amorphous transparent conductive layer 5. It is large enough to prevent it from peeling off and falling off.

剝離力能夠藉由如下方式而求出,即,將第1-支持膜積層體21切斷為寬度50 mm×長度50 mm,並使用萬能拉伸試驗機,於剝離速度300 mm/分鐘且剝離角度180°之條件下進行測定。The peeling force can be obtained by cutting the first support film laminate 21 into a width of 50 mm × a length of 50 mm, and using a universal tensile tester at a peeling speed of 300 mm/min and peeling off. The measurement was carried out at an angle of 180 °.

第1支持膜4之厚度例如為15 μm以上,較佳為30 μm以上,又,例如為150 μm以下,較佳為100 μm以下。The thickness of the first support film 4 is, for example, 15 μm or more, preferably 30 μm or more, and is, for example, 150 μm or less, preferably 100 μm or less.

(第4步驟) 於第4步驟中,如圖1D所示,於真空下,在膜體3之下側形成非晶形透明導電層5。(Step 4) In the fourth step, as shown in Fig. 1D, an amorphous transparent conductive layer 5 is formed on the lower side of the film body 3 under vacuum.

具體而言,於真空下,利用乾式方法於光學調整層10之下表面形成非晶形透明導電層5。Specifically, an amorphous transparent conductive layer 5 is formed on the lower surface of the optical adjustment layer 10 by a dry method under vacuum.

真空條件(氣壓)例如為100 Pa以下,較佳為10 Pa以下,更佳為1 Pa以下。The vacuum condition (air pressure) is, for example, 100 Pa or less, preferably 10 Pa or less, more preferably 1 Pa or less.

作為乾式方法,例如可列舉:真空蒸鍍法、濺鍍法、離子電鍍法等。可較佳地列舉濺鍍法。利用該方法能夠更確實地形成厚度較薄之非晶形透明導電層5(濺鍍膜)。Examples of the dry method include a vacuum deposition method, a sputtering method, and an ion plating method. A sputtering method can be preferably exemplified. By this method, the amorphous transparent conductive layer 5 (sputtering film) having a small thickness can be formed more surely.

於採用濺鍍法之情形時,作為靶材,可列舉構成非晶形透明導電層5之下述無機物,可較佳地列舉ITO。關於ITO之氧化錫濃度,就ITO層之耐久性、結晶化等之觀點而言,例如為0.5質量%以上,較佳為3質量%以上,又,例如為15質量%以下,較佳為13質量%以下。In the case of the sputtering method, the following inorganic substance constituting the amorphous transparent conductive layer 5 is exemplified as the target, and ITO is preferably used. The tin oxide concentration of ITO is, for example, 0.5% by mass or more, preferably 3% by mass or more, and for example, 15% by mass or less, preferably 13 or more, from the viewpoint of durability and crystallization of the ITO layer. Below mass%.

作為濺鍍氣體,例如可列舉Ar等惰性氣體。又,視需要能夠併用氧氣等反應性氣體。於併用反應性氣體之情形時,反應性氣體之流量比並無特別限定,相對於濺鍍氣體及反應性氣體之合計流量比,例如為0.1流量%以上且5流量%以下。Examples of the sputtering gas include an inert gas such as Ar. Further, a reactive gas such as oxygen can be used in combination as needed. When the reactive gas is used in combination, the flow rate ratio of the reactive gas is not particularly limited, and is, for example, 0.1% by flow or more and 5% by flow or less based on the total flow rate ratio of the sputtering gas and the reactive gas.

濺鍍法中所使用之電源例如可為DC(direct current,直流)電源、AC(alternating current,交流)電源、MF(medium frequency,中頻)電源及RF(radio frequency,射頻)電源中之任一者,又,亦可為其等之組合。The power source used in the sputtering method may be, for example, a DC (direct current) power source, an AC (alternating current) power source, an MF (medium frequency) power source, and an RF (radio frequency) power source. One, in addition, can also be a combination of them.

藉此,於膜體3之下表面,形成非晶形(非晶質)透明導電層5。其結果為,在支持於第1支持膜4之狀態下獲得具備非晶形透明導電層5及配置於該非晶形透明導電層5之上之膜體3之非晶形透明導電性膜6。即,獲得具備非晶形透明導電性膜6及配置於非晶形透明導電性膜6之上之第1支持膜4之第2-支持膜積層體22。Thereby, an amorphous (amorphous) transparent conductive layer 5 is formed on the lower surface of the film body 3. As a result, the amorphous transparent conductive film 6 including the amorphous transparent conductive layer 5 and the film body 3 disposed on the amorphous transparent conductive layer 5 is obtained while being supported by the first support film 4. In other words, the second support film laminate 22 including the amorphous transparent conductive film 6 and the first support film 4 disposed on the amorphous transparent conductive film 6 is obtained.

作為非晶形透明導電層5之材料,例如可列舉包含選自由In、Sn、Zn、Ga、Sb、Ti、Si、Zr、Mg、Al、Au、Ag、Cu、Pd、W所組成之群之至少1種金屬之金屬氧化物。於金屬氧化物中,視需要亦可進而摻雜有上述群中所示之金屬原子。The material of the amorphous transparent conductive layer 5 includes, for example, a group selected from the group consisting of In, Sn, Zn, Ga, Sb, Ti, Si, Zr, Mg, Al, Au, Ag, Cu, Pd, and W. At least one metal oxide of a metal. In the metal oxide, a metal atom shown in the above group may be further doped as needed.

作為非晶形透明導電層5,具體而言,可列舉:例如銦錫複合氧化物(ITO)等含有銦之氧化物、例如銻錫複合氧化物(ATO)等含有銻之氧化物等。就透明性及導電性良好之觀點而言,可較佳地列舉含有銦之氧化物,可更佳地列舉ITO。Specific examples of the amorphous transparent conductive layer 5 include an oxide containing indium such as indium tin composite oxide (ITO), and an oxide containing antimony such as antimony-tin composite oxide (ATO). From the viewpoint of good transparency and conductivity, an oxide containing indium is preferable, and ITO is more preferably used.

本說明書中之「ITO」只要為至少包含銦(In)及錫(Sn)之複合氧化物即可,亦可包含除其等以外之追加成分。作為追加成分,例如可列舉除In、Sn以外之金屬元素,具體而言,可列舉Zn、Ga、Sb、Ti、Si、Zr、Mg、Al、Au、Ag、Cu、Pd、W、Fe、Pb、Ni、Nb、Cr、Ga等。The "ITO" in the present specification may be a composite oxide containing at least indium (In) and tin (Sn), and may contain additional components other than these. Examples of the additional component include metal elements other than In and Sn, and specific examples thereof include Zn, Ga, Sb, Ti, Si, Zr, Mg, Al, Au, Ag, Cu, Pd, W, and Fe. Pb, Ni, Nb, Cr, Ga, and the like.

非晶形透明導電層5之厚度例如為10 nm以上,較佳為20 nm以上,又,例如為50 nm以下,較佳為30 nm以下。The thickness of the amorphous transparent conductive layer 5 is, for example, 10 nm or more, preferably 20 nm or more, and further, for example, 50 nm or less, preferably 30 nm or less.

(第5步驟) 於第5步驟中,如圖1E所示,去除第1支持膜4。即,自第2-支持膜積層體22去除第1支持膜4。(Fifth Step) In the fifth step, as shown in FIG. 1E, the first support film 4 is removed. That is, the first support film 4 is removed from the second support film laminate 22 .

具體而言,於第2-支持膜積層體22中,自非晶形透明導電性膜6之上表面,將第1支持膜4剝離。Specifically, in the second support film laminate 22, the first support film 4 is peeled off from the upper surface of the amorphous transparent conductive film 6.

藉此,獲得具備非晶形透明導電層5及配置於該非晶形透明導電層5之上之膜體3之非晶形透明導電性膜6。Thereby, the amorphous transparent conductive film 6 including the amorphous transparent conductive layer 5 and the film body 3 disposed on the amorphous transparent conductive layer 5 is obtained.

(第6步驟) 於第6步驟中,如圖1F所示,於非晶形透明導電性膜6之上側配置第2支持膜7。(Sixth Step) In the sixth step, as shown in FIG. 1F, the second support film 7 is disposed on the upper side of the amorphous transparent conductive film 6.

具體而言,於非晶形透明導電性膜6之上表面(即,第1硬塗層8之上表面)經由黏著劑層11而配置第2支持膜7。藉此,非晶形透明導電性膜6經由黏著劑層11而貼合於第2支持膜7。Specifically, the second support film 7 is placed on the upper surface of the amorphous transparent conductive film 6 (that is, the upper surface of the first hard coat layer 8) via the adhesive layer 11. Thereby, the amorphous transparent conductive film 6 is bonded to the second support film 7 via the adhesive layer 11.

第2支持膜7之配置較佳為於大氣下實施。The arrangement of the second support film 7 is preferably carried out under the atmosphere.

作為構成黏著劑層11之黏著劑,例如可列舉:丙烯酸系黏著劑、橡膠系黏著劑(丁基橡膠系黏著劑等)、聚矽氧系黏著劑、聚酯系黏著劑、聚胺基甲酸酯系黏著劑、聚醯胺系黏著劑、環氧系黏著劑、乙烯基烷基醚系黏著劑、氟樹脂系黏著劑等。Examples of the adhesive constituting the adhesive layer 11 include an acrylic adhesive, a rubber adhesive (such as a butyl rubber adhesive), a polyoxygen adhesive, a polyester adhesive, and a polyamine adhesive. An acid ester type adhesive, a polyamidamide type adhesive, an epoxy type adhesive, a vinyl alkyl ether type adhesive, a fluororesin type adhesive, etc.

作為黏著劑之塗佈方法,例如可列舉:刮刀、凹版塗佈機、噴注式塗佈機、塗鑄機、旋轉塗佈機、輥式塗佈機等。Examples of the application method of the adhesive include a doctor blade, a gravure coater, a spray coater, a coater, a spin coater, and a roll coater.

黏著劑層11之厚度例如為1 μm以上,較佳為5 μm以上,又,例如為300 μm以下,較佳為50 μm以下。The thickness of the adhesive layer 11 is, for example, 1 μm or more, preferably 5 μm or more, and is, for example, 300 μm or less, preferably 50 μm or less.

第2支持膜7係於加熱步驟時支持非晶形透明導電性膜6。又,於保護、搬送及保存所獲得之結晶化透明導電性膜1時被使用,且於結晶化透明導電性膜1之使用之前,貼合(配置)於該結晶化透明導電性膜1。換言之,即便於作為製品之出貨時,第2支持膜7亦作為保護膜而貼合於結晶化透明導電性膜1。The second support film 7 supports the amorphous transparent conductive film 6 in the heating step. In addition, when the crystallized transparent conductive film 1 obtained is protected, transported, and stored, it is bonded (disposed) to the crystallized transparent conductive film 1 before use of the crystallized transparent conductive film 1. In other words, even when the product is shipped as a product, the second support film 7 is bonded to the crystallized transparent conductive film 1 as a protective film.

第2支持膜7之降伏強度係於寬度50 mm時,例如超過30 MPa,較佳為50 MPa以上。第2支持膜7之斷裂伸長率例如未達80%。若第2支持膜7之降伏強度為上述下限以上、或斷裂伸長率未達上述上限,則於對非晶形透明導電性膜6及第2支持膜7施加有張力時,能夠抑制該等膜之翹曲。The fall strength of the second support film 7 is, for example, more than 30 MPa, preferably 50 MPa or more, when the width is 50 mm. The elongation at break of the second support film 7 is, for example, less than 80%. When the lodging strength of the second support film 7 is not less than the above lower limit or the elongation at break is less than the above upper limit, when the tension is applied to the amorphous transparent conductive film 6 and the second support film 7, the film can be suppressed. Warping.

第2支持膜7之含水量例如為2.5 μg/m2 以上,較佳為5.0 μg/m2 以上,又,例如為10 μg/m2 以下。The water content of the second support film 7 is, for example, 2.5 μg/m 2 or more, preferably 5.0 μg/m 2 or more, and is, for example, 10 μg/m 2 or less.

第2支持膜7之線熱膨脹係數例如低於第1支持膜4之熱線膨脹係數,具體而言,例如為2.0×10-5 /℃以下,較佳為1.0×10-5 /℃以下。若第2支持膜7之熱膨脹係數為上述上限以下,則於加熱步驟中,能夠降低第2支持膜7之熱縮,而能夠抑制結晶化透明導電性膜1之捲曲之產生。The linear thermal expansion coefficient of the second support film 7 is, for example, lower than the thermal linear expansion coefficient of the first support film 4, and specifically, for example, 2.0 × 10 -5 / ° C or less, preferably 1.0 × 10 -5 / ° C or less. When the thermal expansion coefficient of the second support film 7 is equal to or less than the above upper limit, heat shrinkage of the second support film 7 can be reduced in the heating step, and generation of curl of the crystallized transparent conductive film 1 can be suppressed.

第2支持膜7係與第1支持膜4不同之膜,作為其材料,例如可列舉烯烴樹脂、聚酯樹脂,可較佳地列舉COP、PET,可更佳地列舉PET。由於COP膜或PET膜之熱縮較低,故而能夠進一步抑制結晶化透明導電性膜1之捲曲之產生。The second support film 7 is a film different from the first support film 4, and examples of the material thereof include an olefin resin and a polyester resin, and COP and PET are preferable, and PET is more preferably used. Since the heat shrinkage of the COP film or the PET film is low, the occurrence of curl of the crystallized transparent conductive film 1 can be further suppressed.

第2支持膜7之厚度例如為50 μm以上,較佳為100 μm以上,又,例如為300 μm以下,較佳為200 μm以下。The thickness of the second support film 7 is, for example, 50 μm or more, preferably 100 μm or more, and is, for example, 300 μm or less, or preferably 200 μm or less.

作為將第2支持膜7經由黏著劑層11而配置於非晶形透明導電性膜6之方法,例如,可於非晶形透明導電性膜6之上表面塗佈黏著劑,繼而,將第1支持膜4配置於黏著劑層11之上表面,又,例如,亦可準備於下表面配置有黏著劑層11之第2支持膜7,並使非晶形透明導電性膜6與黏著劑層11接觸。As a method of disposing the second support film 7 on the amorphous transparent conductive film 6 via the adhesive layer 11, for example, an adhesive can be applied to the upper surface of the amorphous transparent conductive film 6, and then the first support is provided. The film 4 is disposed on the upper surface of the adhesive layer 11, and, for example, the second support film 7 on which the adhesive layer 11 is disposed on the lower surface, and the amorphous transparent conductive film 6 is brought into contact with the adhesive layer 11 .

藉此,獲得具備非晶形透明導電性膜6、配置於非晶形透明導電性膜6之上之黏著劑層11、及配置於黏著劑層11之上之第2支持膜的第3-支持膜積層體23。Thereby, the third support film including the amorphous transparent conductive film 6, the adhesive layer 11 disposed on the amorphous transparent conductive film 6, and the second support film disposed on the adhesive layer 11 is obtained. Laminated body 23.

(第7步驟) 於第7步驟中,如圖1G所示,加熱非晶形透明導電層5。(Step 7) In the seventh step, as shown in Fig. 1G, the amorphous transparent conductive layer 5 is heated.

具體而言,對第3-支持膜積層體23實施加熱處理。Specifically, the third support film laminate 23 is subjected to heat treatment.

加熱處理較佳為於大氣下實施。加熱處理例如能夠使用紅外線加熱器、烘箱等而實施。The heat treatment is preferably carried out under the atmosphere. The heat treatment can be carried out, for example, using an infrared heater, an oven, or the like.

加熱溫度例如為100℃以上,較佳為120℃以上,又,例如為200℃以下,較佳為160℃以下。若加熱溫度為上述範圍內,則能夠一面抑制透明基材膜2之熱損傷及自透明基材膜2產生之雜質,一面確實地進行結晶轉化。The heating temperature is, for example, 100 ° C or higher, preferably 120 ° C or higher, and further, for example, 200 ° C or lower, preferably 160 ° C or lower. When the heating temperature is within the above range, the crystal transformation can be surely performed while suppressing thermal damage of the transparent base film 2 and impurities generated from the transparent base film 2.

加熱時間可根據加熱溫度而適當決定,例如為10分鐘以上,較佳為30分鐘以上,又,例如為5小時以下,較佳為3小時以下。The heating time can be appropriately determined depending on the heating temperature, and is, for example, 10 minutes or longer, preferably 30 minutes or longer, and further, for example, 5 hours or shorter, preferably 3 hours or shorter.

藉此,非晶形透明導電層5被結晶化,而形成結晶化透明導電層12。其結果為,如圖1G所示,於經由黏著劑層11而支持於第2支持膜7之狀態下獲得具備結晶化透明導電層12及配置於該結晶化透明導電層12之上之膜體3之結晶化透明導電性膜1。即,獲得具備結晶化透明導電性膜1、配置於結晶化透明導電性膜1之上之黏著劑層11、及配置於黏著劑層11之上之第2支持膜的附支持膜之透明導電性膜24。Thereby, the amorphous transparent conductive layer 5 is crystallized to form the crystallized transparent conductive layer 12. As a result, as shown in FIG. 1G, the crystallized transparent conductive layer 12 and the film body disposed on the crystallized transparent conductive layer 12 are obtained while being supported by the second support film 7 via the adhesive layer 11. The crystallized transparent conductive film 1 of 3. In other words, the transparent conductive film having the crystallized transparent conductive film 1 and the adhesive layer 11 disposed on the crystallized transparent conductive film 1 and the second support film disposed on the adhesive layer 11 is obtained. Sex film 24.

附支持膜之透明導電性膜24係於使用時將黏著劑層11及第2支持膜7去除(剝離),而以單體之形式使用結晶化透明導電性膜1。The transparent conductive film 24 with a support film is used to remove (peel) the adhesive layer 11 and the second support film 7 at the time of use, and the crystallized transparent conductive film 1 is used as a monomer.

(結晶化透明導電性膜) 結晶化透明導電性膜1例如為圖像顯示裝置所具備之觸控面板用基材等之一零件,亦即,並非圖像顯示裝置。即,結晶化透明導電性膜1係用以製作圖像顯示裝置等之零件,且為不包含LCD(liquid crystal display,液晶顯示裝置)模組等圖像顯示元件而是零件單獨地流通且產業上能夠利用之裝置。具體而言,結晶化透明導電性膜1依序具備第1硬塗層8、透明基材膜2、第2硬塗層9、光學調整層10、及結晶化透明導電層12。(Crystalized Transparent Conductive Film) The crystallized transparent conductive film 1 is, for example, a component such as a base material for a touch panel provided in an image display device, that is, an image display device. In other words, the crystallized transparent conductive film 1 is used to form a component such as an image display device, and does not include an image display element such as an LCD (liquid crystal display) module, but the parts are separately distributed and industrially. A device that can be used. Specifically, the crystallized transparent conductive film 1 is provided with the first hard coat layer 8 , the transparent base film 2 , the second hard coat layer 9 , the optical adjustment layer 10 , and the crystallized transparent conductive layer 12 in this order.

於結晶化透明導電性膜1例如被用作觸控面板用基材之情形時,作為觸控面板之形式,可列舉光學方式、超音波方式、靜電電容方式、電阻膜方式等各種方式,可尤佳地用於靜電電容方式之觸控面板。When the crystallized transparent conductive film 1 is used as a substrate for a touch panel, for example, various forms such as an optical method, an ultrasonic method, a capacitance method, and a resistive film method can be used as the touch panel. It is especially useful for capacitive touch panels.

根據該結晶化透明導電性膜1之製造方法,於膜體3配置(支持)於第1支持膜4之狀態下,於真空下形成非晶形透明導電層5。因此,於搬送時或非晶形透明導電層形成時,能夠抑制膜體3之變形及斷裂。According to the method for producing the crystallized transparent conductive film 1, the amorphous transparent conductive layer 5 is formed under vacuum in a state where the film body 3 is placed (supported) on the first support film 4. Therefore, deformation or breakage of the film body 3 can be suppressed at the time of conveyance or formation of the amorphous transparent conductive layer.

又,於形成非晶形透明導電層5之步驟之後、及加熱非晶形透明導電層5之步驟之前,去除第1支持膜4並配置第2支持膜7。因此,能夠分別採用適於形成非晶形透明導電層5時之第1支持膜4、及適於加熱時之第2支持膜7。因此,於形成非晶形透明導電層5時,能夠避免採用對真空下之非晶形透明導電層5之形成造成不良影響之支持膜(具體而言,含水量較多之膜),而採用恰當之第1支持膜4,因此能夠抑制所要形成之非晶形透明導電層5之特性(透明性、導電性)之降低。又,於加熱非晶形透明導電層5時,能夠避免選擇熱縮較大之支持膜,而採用熱縮較低之第2支持膜7,因此能夠抑制所要獲得之結晶化透明導電性膜1之捲曲。Further, after the step of forming the amorphous transparent conductive layer 5 and before the step of heating the amorphous transparent conductive layer 5, the first support film 4 is removed and the second support film 7 is placed. Therefore, the first support film 4 suitable for forming the amorphous transparent conductive layer 5 and the second support film 7 suitable for heating can be used. Therefore, when the amorphous transparent conductive layer 5 is formed, it is possible to avoid the use of a support film (specifically, a film having a large water content) which adversely affects the formation of the amorphous transparent conductive layer 5 under vacuum, and adopts appropriate Since the first support film 4 is provided, it is possible to suppress a decrease in characteristics (transparency and conductivity) of the amorphous transparent conductive layer 5 to be formed. Further, when the amorphous transparent conductive layer 5 is heated, the support film having a large heat shrinkage can be avoided, and the second support film 7 having a low heat shrinkage can be used. Therefore, the crystallized transparent conductive film 1 to be obtained can be suppressed. curly.

而且,於該製造方法中,尤其是於透明基材膜2為機械強度較脆之膜(例如,薄型環烯烴聚合物膜)之情形時,能夠不斷裂而較佳地製造具備該透明基材膜2之結晶化透明導電性膜1。Further, in the production method, particularly in the case where the transparent base film 2 is a film having a relatively strong mechanical strength (for example, a thin cycloolefin polymer film), it is possible to preferably manufacture the transparent substrate without breaking. The transparent conductive film 1 of the film 2 is crystallized.

(變化例) 參照圖2A-F,對本發明之結晶化透明導電性膜1之製造方法之一實施形態的變化例進行說明。再者,於變化例中,對與一實施形態相同之構件標註相同之符號,並省略其說明。(Variation) A modification of an embodiment of the method for producing the crystallized transparent conductive film 1 of the present invention will be described with reference to Figs. 2A-F. In the modified example, the same members as those in the embodiment are denoted by the same reference numerals, and their description will be omitted.

(1)於圖1A-G所示之一實施形態中,膜體3具備第1硬塗層8、第2硬塗層9及光學調整層10,但例如亦可如圖2A-F所示般,膜體3不具備該等層之一部分或全部。例如,圖2A-F所示之實施形態係膜體3僅設為透明基材膜2之一例。於圖2A-F所示之實施形態中,如圖2B所示,於第3步驟中,於透明基材膜2之上表面直接配置第1支持膜4,如圖2C所示,於第4步驟中,於透明基材膜2之下表面直接形成非晶形透明導電層5,如圖2D所示,於第5步驟中,自透明基材膜2去除第1支持膜4,如圖2E所示,於第6步驟中,於透明基材膜2之上表面,直接經由黏著劑層11而配置第2支持膜7。(1) In the embodiment shown in FIGS. 1A-G, the film body 3 includes the first hard coat layer 8, the second hard coat layer 9, and the optical adjustment layer 10. However, for example, as shown in FIGS. 2A-F, Generally, the film body 3 does not have part or all of the layers. For example, in the embodiment shown in Figs. 2A-F, the film body 3 is merely an example of the transparent substrate film 2. In the embodiment shown in FIGS. 2A-F, as shown in FIG. 2B, in the third step, the first support film 4 is directly disposed on the upper surface of the transparent substrate film 2, as shown in FIG. 2C. In the step, the amorphous transparent conductive layer 5 is directly formed on the lower surface of the transparent substrate film 2. As shown in FIG. 2D, in the fifth step, the first support film 4 is removed from the transparent substrate film 2, as shown in FIG. 2E. In the sixth step, the second support film 7 is placed directly on the upper surface of the transparent base film 2 via the adhesive layer 11.

(2)於圖1A-G所示之一實施形態中,未於結晶化透明導電層12形成配線圖案等圖案,但例如,雖未圖示,可於結晶化透明導電層12形成圖案。具體而言,藉由在加熱步驟之前或之後,利用公知之蝕刻方法將非晶形透明導電層5或結晶化透明導電層12進行蝕刻,而能夠於結晶化透明導電層12形成圖案。(2) In the embodiment shown in FIGS. 1A to 1G, a pattern such as a wiring pattern is not formed on the crystallized transparent conductive layer 12. However, for example, although not shown, a pattern can be formed on the crystallized transparent conductive layer 12. Specifically, the amorphous transparent conductive layer 5 or the crystallized transparent conductive layer 12 is etched by a known etching method before or after the heating step, whereby the transparent conductive layer 12 can be patterned.

(3)於圖1A-G所示之一實施形態中,一面以捲對捲方式搬送透明基材膜2,一面實施第1~第7步驟,但例如,雖未圖示,亦可以批次方式(單片方式)形成第1~第7步驟之一部分或全部。就生產性之觀點而言,較佳為以捲對捲方式實施第1~第7步驟。又,於捲對捲步驟中,可連續地實施第1~第7步驟,又,亦可斷續地實施第1~第7步驟。(3) In the embodiment shown in FIGS. 1A-G, the first to seventh steps are performed while conveying the transparent base film 2 in a roll-to-roll manner. However, for example, although not shown, a batch may be used. The method (single-chip method) forms part or all of the first to seventh steps. From the viewpoint of productivity, it is preferred to carry out the first to seventh steps in a roll-to-roll manner. Further, in the roll-to-roll step, the first to seventh steps may be continuously performed, and the first to seventh steps may be intermittently performed.

(4)於圖1A-G所示之一實施形態中,於第3步驟中,於膜體3之上表面直接配置第1支持膜4,但例如,雖未圖示,亦可於膜體3之上表面經由黏著劑層而配置第1支持膜4。(4) In the embodiment shown in FIGS. 1A to 10G, in the third step, the first support film 4 is directly disposed on the upper surface of the film body 3. However, for example, although not shown, the film may be formed on the film body. The first support film 4 is placed on the upper surface of the third layer via the adhesive layer.

作為該黏著劑層,可列舉與就第6步驟於上文敍述之黏著劑層11相同者。The adhesive layer may be the same as the adhesive layer 11 described above in the sixth step.

<另一實施形態> 於圖1A-G所示之一實施形態中,作為無機物層積層體之製造方法之一實施形態,將結晶化透明導電性膜1之製造方法作為例示,但並不限定於此。例如,雖未圖示,但可列舉阻氣性膜之製造方法,以作為無機物層積層體之製造方法之另一實施形態。阻氣性膜具備包含阻氣性無機材料之阻氣層、及基材膜。作為該等阻氣層及基材膜,可使用公知者,例如,可列舉日本專利特開2011-149057號公報中所揭示者。<Another embodiment> In the embodiment shown in FIG. 1A to FIG. 1G, the method for producing the crystallized transparent conductive film 1 is exemplified as one embodiment of the method for producing the inorganic layered laminate. herein. For example, although not shown, a method for producing a gas barrier film is exemplified as another embodiment of a method for producing an inorganic layered laminate. The gas barrier film is provided with a gas barrier layer containing a gas barrier inorganic material, and a base film. As such a gas barrier layer and a base film, a known one can be used, and for example, those disclosed in JP-A-2011-149057 can be cited.

再者,上述發明係作為本發明之例示之實施形態而提供,但其僅為例示,不應限定地進行解釋。由該技術領域之業者所明確之本發明之變化例係包含於下述申請專利範圍者。Furthermore, the invention described above is provided as an exemplified embodiment of the invention, but is merely illustrative and should not be construed as limiting. Variations of the invention as clarified by those skilled in the art are included in the scope of the following claims.

1‧‧‧結晶化透明導電性膜1‧‧‧Crystalized transparent conductive film

2‧‧‧透明基材膜2‧‧‧Transparent substrate film

3‧‧‧膜體3‧‧‧membrane body

4‧‧‧第1支持膜4‧‧‧1st support film

5‧‧‧非晶形透明導電層5‧‧‧Amorphous transparent conductive layer

6‧‧‧非晶形透明導電性膜6‧‧‧Amorphous transparent conductive film

7‧‧‧第2支持膜7‧‧‧2nd support film

8‧‧‧第1硬塗層8‧‧‧1st hard coat

9‧‧‧第2硬塗層9‧‧‧2nd hard coat

10‧‧‧光學調整層10‧‧‧Optical adjustment layer

11‧‧‧黏著劑層11‧‧‧Adhesive layer

12‧‧‧結晶化透明導電層12‧‧‧ Crystallized transparent conductive layer

15‧‧‧保護膜15‧‧‧Protective film

21‧‧‧第1-支持膜積層體21‧‧‧1st Supporting Membrane

22‧‧‧第2-支持膜積層體22‧‧‧2nd support film laminate

23‧‧‧第3-支持膜積層體23‧‧‧3rd Supporting Membrane

24‧‧‧附有支持膜之透明導電性膜24‧‧‧Transparent conductive film with support film

圖1A-G表示本發明之無機物層積層體之製造方法之一實施形態的步驟圖,圖1A表示準備透明基材膜之第1步驟,圖1B表示形成膜體之第2步驟,圖1C表示配置第1支持膜之第3步驟,圖1D表示形成非晶形透明導電層之第4步驟,圖1E表示去除第1支持膜之第5步驟,圖1F表示配置第2支持膜之第6步驟,圖1G表示加熱非晶形透明導電層之第7步驟。 圖2A-F表示本發明之無機物層積層體之製造方法之一實施形態之變化例的步驟圖,圖2A表示準備透明基材膜之第1步驟,圖2B表示配置第1支持膜之第3步驟,圖2C表示形成非晶形透明導電層之第4步驟,圖2D表示去除第1支持膜之第5步驟;圖2E表示配置第2支持膜之第6步驟,圖2F表示加熱非晶形透明導電層之第7步驟。1A-G are process diagrams showing an embodiment of a method for producing an inorganic layered product of the present invention, wherein Fig. 1A shows a first step of preparing a transparent substrate film, and Fig. 1B shows a second step of forming a film body, and Fig. 1C shows The third step of arranging the first support film, FIG. 1D shows the fourth step of forming the amorphous transparent conductive layer, FIG. 1E shows the fifth step of removing the first support film, and FIG. 1F shows the sixth step of arranging the second support film. Figure 1G shows the seventh step of heating the amorphous transparent conductive layer. 2A-F are process diagrams showing a modification of an embodiment of a method for producing an inorganic layered product according to the present invention, wherein Fig. 2A shows a first step of preparing a transparent substrate film, and Fig. 2B shows a third step of arranging a first support film. Step 2C shows a fourth step of forming an amorphous transparent conductive layer, FIG. 2D shows a fifth step of removing the first supporting film; FIG. 2E shows a sixth step of arranging the second supporting film, and FIG. 2F shows heating of amorphous transparent conductive Step 7 of the layer.

Claims (9)

一種無機物層積層體之製造方法,其特徵在於包括: 於具備基材膜之膜體之厚度方向一側配置第1支持膜之步驟;於上述膜體之厚度方向另一側於真空下形成無機物層之步驟; 去除上述第1支持膜之步驟; 於上述膜體之厚度方向一側配置第2支持膜之步驟;及 加熱上述無機物層之步驟。A method for producing an inorganic layered product, comprising: a step of disposing a first supporting film on a side in a thickness direction of a film body including a base film; and forming an inorganic substance under vacuum in the other side in the thickness direction of the film body a step of removing the first support film; a step of disposing the second support film on the side in the thickness direction of the film; and a step of heating the inorganic layer. 如請求項1之無機物層積層體之製造方法,其中上述第1支持膜之含水量未達2.5 μg/m2The method for producing an inorganic layer laminate according to claim 1, wherein the first support film has a water content of less than 2.5 μg/m 2 . 如請求項1之無機物層積層體之製造方法,其中上述第1支持膜之寬度10 mm時之降伏強度為30 MPa以下,第1支持膜之斷裂伸長率為80%以上。The method for producing an inorganic layer laminate according to claim 1, wherein the first support film has a fall strength of 30 MPa or less when the width is 10 mm, and the elongation at break of the first support film is 80% or more. 如請求項1之無機物層積層體之製造方法,其中上述第1支持膜為延伸聚丙烯膜。The method for producing an inorganic layer laminate according to claim 1, wherein the first support film is a stretched polypropylene film. 如請求項1之無機物層積層體之製造方法,其中上述第1支持膜與上述膜體之剝離力為0.005 N/50 mm以上且0.50 N/50 mm以下。The method for producing an inorganic layer laminate according to claim 1, wherein the peeling force of the first support film and the film body is 0.005 N/50 mm or more and 0.50 N/50 mm or less. 如請求項1之無機物層積層體之製造方法,其中上述第2支持膜為聚對苯二甲酸乙二酯膜。The method for producing an inorganic layer laminate according to claim 1, wherein the second support film is a polyethylene terephthalate film. 如請求項1之無機物層積層體之製造方法,其中上述基材膜為環烯烴聚合物膜。The method for producing an inorganic layer laminate according to claim 1, wherein the substrate film is a cycloolefin polymer film. 如請求項1之無機物層積層體之製造方法,其中上述於真空下形成無機物層之步驟係利用濺鍍法於真空下形成無機物層之步驟。The method for producing an inorganic layered body according to claim 1, wherein the step of forming the inorganic layer under vacuum is a step of forming an inorganic layer under vacuum by a sputtering method. 如請求項1之無機物層積層體之製造方法,其中上述無機物層含有銦-錫複合氧化物。The method for producing an inorganic layered product according to claim 1, wherein the inorganic layer contains an indium-tin composite oxide.
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