TW201917093A - Mass production manufacturing method of the nanowire and manufacturing device thereof capable of manufacturing single crystal nanowires for gas sensing field - Google Patents

Abstract

The present relates to a mass production manufacturing method of nanowire and a manufacturing device thereof. The mass production manufacturing method of nanowire comprises the following steps of: preparing a nanoporous substrate, of which the surface is covered with a plurality of parallelly arranged through holes; providing one or multiple kinds of metal powders, wherein the metal powders have particle diameters smaller than 100[mu]m and is uniformly spread on the nanoporous substrate; putting the nanoporous substrate into a cavity and establishing a high vacuum environment in the cavity; heating the interior of the cavity to melt the metal powders into a molten metal; and pressing the molten metal inside the cavity to fill into the holes of the nanoporous substrate, so as to die cast the molten metal into a plurality of nanowires.

Description

   Mass production manufacturing method and manufacturing device of nano wire   

The invention relates to a method for manufacturing a wire and a manufacturing device thereof, and more particularly to a method for mass-producing a nano wire and a manufacturing device thereof.

Due to the increasingly serious environmental pollution and industrial needs, the development of sensors has received much attention. In today's increasingly complex air pollution control and urgent industrial needs, high-efficiency gas sensors are receiving more and more attention.

In recent years, the appearance of gas sensors with nano-structured materials has a significant increase in sensitivity with the decrease in the size of the agglomeration. Nano-particulate materials smaller than 100 nanometers have a large surface area that can provide reactions due to their small particle size. Therefore, it has considerable application value for gas sensors that must have good surface effects. Due to the extremely fine particle size, nanometer crystal grains have a large specific surface area, so that the ratio of surface energy to total energy will increase significantly.

Nanowires are currently produced in laboratories and have not been found in nature. Nanowires can be made by suspension, deposition or elemental synthesis.

Suspended nanowire refers to that the nanowire is fixed at the end under vacuum conditions. Suspended nanowires can be obtained by chemical etching of thick lines, or they can be produced by bombarding thick lines with high-energy particles (atoms or molecules); deposition Nanowire refers to the deposition of nanowires on the surface of other substances: for example, it can be a metal atom wire covering the surface of an insulator; a commonly used technique in elemental synthesis is VLS-Liquid-Solid ), This technology uses laser-melted particles or a raw material gas silane as the source (material), and then exposes the source (material) to a catalyst. For nanowires, the best catalytic material is nanocluster of liquid metal (such as gold), which can be purchased as a colloid and then deposited on a substrate or self-assembled from a film by dewetting.

The main problem to be solved by the present invention is to provide a mass production manufacturing method of nanowires and a manufacturing device thereof, particularly for manufacturing single-crystal nanowires in the field of gas sensing.

In order to achieve the above object, the present invention discloses a method for mass production of nanowires, including: preparing a nanoporous substrate, and the surface of the nanoporous substrate is covered with a plurality of through-holes arranged in parallel; A variety of metal powders with a particle size of less than 100 μm, evenly spread on the nanoporous substrate; the nanoporous substrate is made into a cavity, and a high vacuum is established in the cavity Environment; heating the inside of the cavity to melt the metal powders into a metal melt; and pressurizing the metal melt inside the cavity to die-cast the holes filled into the nanoporous substrate into a plurality of nanometers Rice wire.

In one embodiment, the nanoporous substrate is made through the growth mechanism of nanoporous alumina, and the manufacturing method includes a pre-processing step, an electrolytic polishing step, a first anodizing step, a A step of dissolving the alumina layer, a second anodizing step, a step of removing the pure aluminum layer, and a step of removing the barrier layer.

In one embodiment, the one or more metal powders include lead powder, tin powder, and bismuth powder. The mass ratio of the lead powder, tin powder, and bismuth powder is 21.12% of lead powder, 36.29% of tin powder, and bismuth powder. 42.59%.

In one embodiment, the way to establish the high vacuum environment is to use a mechanical pump to suck the gas in the cavity to 0.05 Torr, and then pass argon to 760 Torr, and then suck the gas in the cavity to 0.05 Torr, and then argon gas was introduced up to 760 Torr, and the gas in the cavity was sucked to 0.05 Torr.

In one embodiment, the cavity is heated to 360 degrees Celsius and maintained for 20 minutes to melt the metal powder into the metal melt. During the process of heating the metal powder to melt into the metal melt, the metal is melted. The liquid is rotated and stirred.

In one embodiment, a programmable logic-controlled die-casting machine is used to pressurize the metal melt in the cavity to die-cast a plurality of holes filled in the nano-porous substrate into a plurality of nano wires.

In an embodiment, after the die-casting into a plurality of nanowires, a heat treatment process is further performed to form the nanowires into a plurality of single-crystal nanowires.

In the above embodiment, the heat treatment program includes a first heat treatment program and a second heat treatment program. The first heat treatment program is an annealing treatment at 120 degrees Celsius for 96 hours, and the second heat treatment program is performed at a temperature below zero degrees Celsius. 1 hour quenching treatment.

The invention also includes providing a nanowire manufacturing device for mass-producing nanowires. The structure includes: a cavity, the cavity has a receiving space inside; a nanoporous substrate, the nano The surface of the multi-porous substrate is covered with a plurality of holes arranged in parallel. The pores have a pore diameter ranging from 60 to 80 nm, and there are about 10 ¹² holes per square centimeter. The nano-porous substrate is placed in the accommodation inside the cavity. Space; one or more metal powders with a particle size of less than 100 μm, evenly spread on the nanoporous substrate; a pump unit for sucking or passing gas into the cavity to change Gas type and gas pressure inside the cavity; a temperature control unit for heating the temperature inside the cavity to melt the metal powders on the nanoporous substrate inside the cavity into a metal melt A die-casting unit for pressurizing the molten metal into the holes of the nano-porous substrate, and die-casting into a plurality of nano-wires.

In one embodiment, an atmosphere furnace may be further included. The atmosphere furnace is filled with argon gas, and the nanowires are annealed at 120 degrees Celsius for 96 hours.

In the above-mentioned embodiment, it may further include a freezer for placing the annealed nanowires, and quenching the nanowires for 1 hour at a low temperature below zero degrees Celsius.

In one embodiment, the nanoporous substrate is an alumina substrate.

In one embodiment, the holes are honeycomb holes.

In an embodiment, the one or more metal powders include lead powder, tin powder, and bismuth powder; wherein the mass ratio of the lead powder, tin powder, and bismuth powder is 21.12% of lead powder, 36.29% of tin powder, Bismuth powder was 42.59%.

In one embodiment, the pump unit is a mechanical pump.

In one embodiment, the die casting unit is a programmable logic controlled die casting machine.

The invention also provides a single crystal nano wire, which is applied to a gas sensor. The composition includes: lead powder with a mass ratio of 21.12%, tin powder with a mass ratio of 36.29%, and bismuth powder with a mass ratio of 42.59%. 60 ~ 80nm.

When the nanowire manufactured by the present invention is applied to a gas sensing mechanism, the ratio of atoms located on the surface of the particles to atoms located inside the particles increases as the particles become smaller, causing the surface atoms to easily deviate from the lattice position and scatter. To a gaseous state, this phenomenon is called surface effect. Due to the surface effect of nanomaterials, the bonding force between the inner and outer layer atoms is weakened. Therefore, the surface layer atoms are likely to chemically bond with the van der Waals force of gas molecules, and then adsorb gas molecules. If the adsorption process is a reduction reaction, it will reduce the surface energy barrier, help electrons flow, and reduce resistance. Conversely, if an oxidizing gas is adsorbed, the resistance will increase. Therefore, resistance measurement can be used to verify the ability of nanomaterials to adsorb specific gas molecules.

1‧‧‧Nano wire

10‧‧‧ nanoporous substrate

10’‧‧‧aluminum foil device

10A‧‧‧ alumina layer

10B‧‧‧ alumina layer

10C‧‧‧Pure aluminum layer

10D‧‧‧Barrier layer

101‧‧‧ aluminum foil

102‧‧‧ Hole

11‧‧‧ copper plate

111‧‧‧Slit

12‧‧‧graphite rod

14‧‧‧ Electrolyte

15‧‧‧oxalic acid solution

16‧‧‧Sodium hydroxide

17‧‧‧ mixed solution

20’‧‧‧ metal powder

20A‧‧‧Lead powder

20B‧‧‧tin powder

20C‧‧‧bismuth powder

20‧‧‧Metal melt

30‧‧‧ Cavity

30A‧‧‧Argon

30’‧‧‧accommodation space

300‧‧‧Temperature control system

301‧‧‧pu unit

302‧‧‧Die-casting unit

D‧‧‧ Aperture

S1‧‧‧Nano wire mass production manufacturing method

Mass production manufacturing method of S1A‧‧‧nano wire

S11 ~ S16‧‧‧step

S110‧‧‧Nano porous substrate manufacturing method

S111 ~ S117‧‧‧step

S2‧‧‧ Monocrystalline Nano Wire Mass Production Manufacturing Method

S21 ~ S27‧‧‧ steps

1A is a flowchart of a first embodiment of a manufacturing method according to the present invention; FIG. 1B is a flowchart of a manufacturing method of a nanoporous substrate according to the present invention; and FIGS. 2A to 2D are nanoporous substrates according to the present invention. 3A to 3H are schematic diagrams of pore forming of a nanoporous substrate according to the present invention; FIGS. 4A and 4B are schematic diagrams of an apparatus for forming nanowires by vacuum die casting according to the present invention; FIG. 5 is The flowchart of the second embodiment of the manufacturing method of the invention; FIG. 6 is the flowchart of the third embodiment of the manufacturing method of the invention.

Next, the present invention will be further described with reference to the drawings and specific embodiments, so that those skilled in the art can more easily understand the present invention and implement it.

The main problem to be solved by the present invention is to provide a mass production manufacturing method of nanowires and a manufacturing device thereof, particularly for manufacturing single-crystal nanowires in the field of gas sensing.

In order to achieve the above-mentioned object, the present invention discloses a mass production method S1 of nanowires. Please refer to FIG. 1A, including: Step S11: preparing a nanoporous substrate, and the surface of the nanoporous substrate is covered with a plurality of Steps S12: providing one or more metal powders having a particle size of less than 100 μm and evenly spreading on the nanoporous substrate; step S13: making the nanoporous substrate into A cavity, and establish a high vacuum environment in the cavity; step S14: heating the inside of the cavity to melt the metal powder into a molten metal; and step S15: pressurizing the metal inside the cavity The molten metal is die-casted into a plurality of nanowires through the holes filled in the nanoporous substrate.

In an embodiment, the manufacturing method S110 for preparing a nanoporous substrate is shown in FIG. 1B and includes: a pre-processing step S111: preparing a plurality of aluminum foils, removing surface impurities of the aluminum foils, and placing the aluminum foils in a high-temperature furnace Take out after baking; an electrolytic polishing step S112: each of the aluminum foils is covered with a copper plate, cross-fixed in a grid shape, a graphite rod is placed in each of the grids, and positive and negative leads are connected to form an aluminum foil device, and the aluminum foil is The device is placed in an electrolytic solution and electrified for electrolytic polishing. A first anodizing step S113: the aluminum foil device is placed in an oxalic acid solution and energized to form an aluminum oxide layer on the surfaces of the aluminum foils. Step S114 of aluminum layer: put the aluminum foil device into a sodium hydroxide solution, wait for the aluminum oxide layer to dissolve and take it out; a second anodizing step S115: put the aluminum foil device into an oxalic acid solution again to energize, An aluminum oxide layer is formed on the surface of the aluminum foils and taken out; a step S116 of removing the pure aluminum layer: removing the aluminum foils from the aluminum foil device, and placing the aluminum foils in copper chloride, In a solution of hydrochloric acid and deionized water, wait for the pure aluminum layer at the bottom of the aluminum foils to dissolve and remove; and remove the barrier layer step S117: place the aluminum foils in a sodium hydroxide solution and wait for the After the barrier layer at the bottom of the aluminum foil is dissolved and disappeared, a nanoporous alumina plate is obtained. The surface of the nanoporous substrate is covered with a plurality of parallel through holes. There are about 10 ¹² holes in cm.

In the above-mentioned nanoporous substrate manufacturing method S110, the nanoporous substrate is made through the growth mechanism of nanoporous alumina. For the process device and structure diagram, please refer to FIGS. 2A to 2D.

As shown in FIG. 2A, 2n pieces of aluminum foil 101 are prepared, and the surface impurities of the aluminum foils 101 are removed. The aluminum foils 101 are baked in a high temperature oven and then taken out. Each of the aluminum foils 101 is covered with a copper plate 11 and used as shown in FIG. 2B. Scissors cut n thin slits 111 at the lower end of each of the aluminum foil 101 covered with the copper sheet 11. As shown in FIG. 2C, they are fixed in a grid pattern. A graphite rod 12 is placed in each grid and the positive and negative lead wires are connected to form a grid. The aluminum foil device 10 'is placed in an electrolytic solution 14 for electrification and electropolishing after the aluminum foil device 10' is removed. The structure of the aluminum foil 101 in the aluminum foil device 10 'after removal is shown in FIG. 2D, which has a plurality of holes 102. Structure, the pore diameter D of each of the holes 102 is between 60 and 80 nm, and there are about 10 ¹² holes 102 per square centimeter. Between the hole 102 and the hole 102 is an alumina layer 10B. A barrier layer 10D is provided at the bottom of the alumina layer 10B, and a pure aluminum layer of the aluminum foil 101 that has not been oxidized by electrolytic reaction is located below the barrier layer. 10C.

In the above-mentioned nanoporous substrate manufacturing method S110, the nanoporous substrate is made through a nanoporous alumina growth mechanism, and the manufacturing method includes a pre-processing step S111 and an electrolytic polishing step S112. A first anodizing step S113, a dissolving alumina layer step S114, a second anodizing step S115, a step of removing pure aluminum layer S116, and a step of removing barrier layer S117. Please refer to FIGS. 3A to 3H accordingly.

As shown in FIG. 3A, in the pre-processing step, the aluminum foil 101 can be placed in an ultrasonic vibration machine, poured into acetone and shaken for about 5 minutes to remove surface impurities; then washed with deionized water and wiped clean. In order to reduce the stress in the aluminum foil 101 so as to obtain a large range and neatly arranged holes 102 (as shown in FIG. 2D), the aluminum foil 101 may be placed in a high-temperature furnace for baking.

Next, as shown in FIG. 3B, in the electrolytic polishing step, 14M phosphoric acid, 18M sulfuric acid, and deionized water are firstly mixed at a specific mass ratio, and are sufficiently mixed to serve as the electrolytic solution 14. As shown in FIG. 2A to FIG. 2D, the copper plate 11 is completely covered with aluminum foil 101, and n pieces are taken out, and n fine slits 111 are cut at the lower end with scissors; as for the other n pieces, n fine slits 111 are also cut out for subsequent The cross is fixed. A small slit is opened on the aluminum foil 101 to wire the copper plate 11, and the aluminum foil 101 and the copper plate 11 are arranged in a matrix pattern as shown in FIG. 2C. The graphite rod 12 is placed in the center of each plate and fixed to the bottom of the container. The graphite rod 12 is connected to the negative electrode, and the copper plate 11 is connected to the positive electrode. The graphite rod 12 is slowly put into the electrolytic solution 14, wherein the liquid surface of the electrolytic solution 14 does not submerge the positive electrode. Turn on the power at room temperature and apply voltage to ^two (n + 1) parallel subsystems for electrolysis at the same time to obtain aluminum foil 101 with extremely smooth surface, as shown in Figure 3B.

Next, as shown in FIG. 3C, in the first anodizing step, the oxalic acid solution 15 is first poured, and the polished aluminum foil device 10 ′ and the graphite rod 12 are respectively connected with the positive electrode and the negative electrode, and are arranged in the above-mentioned arrangement. Turn on the power and apply voltage to ^two (n + 1) parallel subsystems for electrolysis. At this time, the surface of the aluminum foil has been covered with a layer of alumina 10A, and its thickness is directly related to the electrolysis time and voltage.

Next, as shown in FIG. 3D, in the second anodizing step, the aluminum foil on the aluminum foil device 10 'is removed and immersed in the sodium hydroxide solution 16 until the aluminum oxide layer 10A disappears, leaving a pure aluminum layer 10C.

Next, as shown in FIG. 3E, the first anodizing apparatus was used. The aluminum foil was subjected to the second anodization in the oxalic acid solution 15. The upper half of the aluminum foil subjected to the second anodization was the alumina layer 10B. The half is a thinner pure aluminum layer 10C, and its cross-sectional structure is shown in FIG. 2D.

Next, as shown in FIG. 3F, in the step of removing the pure aluminum layer, the aluminum foil is immersed in a mixed solution 17 composed of copper chloride, 10 wt% hydrochloric acid, and deionized water in a specific mass ratio to remove the pure aluminum layer 10C. At the time, the bottom of the aluminum foil was closed by the alumina barrier layer 10D, and the top was covered with honeycomb-shaped and parallel-arranged holes 102, the diameter D of which can reach 60 ~ 80nm, and its distribution form is shown in FIG. 2D.

Next, as shown in FIG. 3G, a step of removing the barrier layer is performed. In this step, after removing the pure aluminum layer 10C, the alumina barrier layer 10D is exposed and can be etched with a sodium hydroxide solution 16 to obtain a vertical penetration. The nanoporous substrate 10 is shown in FIG. 3H. In FIG. 3H, the nanoporous substrate 10 has about 10 ¹² holes 102 per square centimeter, and the pore diameter D of these holes 102 is between 60 and 80 nm.

The present invention also provides a nanowire manufacturing device for mass-producing nanowires. Please refer to FIGS. 4A and 4B. The structure includes a cavity 30 having an accommodating space 30 'therein. A nanoporous substrate 10, the surface of the nanoporous substrate 10 is covered with a plurality of holes 102 arranged in parallel (as shown in FIG. 3G), and the pores 102 have a pore diameter of 60 ~ 80nm, each square centimeter is about There are 10 ¹² holes 102. The nanoporous substrate 10 is placed in the accommodating space 30 'inside the cavity 30; one or more metal powders 20', and the particle sizes of the metal powders 20 'are less than 100 μm, uniform. Tiled on the nanoporous substrate 10; a pump unit 301 for sucking or passing gas into the cavity 30 to change the gas type and gas pressure inside the cavity 30; a temperature control unit 300, for heating the temperature inside the cavity 30, to melt the metal powders 20 'on the nanoporous substrate 10 inside the cavity 30 into a metal melt 20; a die-casting unit 302, By pressing the metal melt 20, the holes 102 (such as 3G shown), a plurality of die casting is the wire rod 1 nm.

In one embodiment, the one or more metal powders 20 'include a lead powder 20A, a tin powder 20B, and a bismuth powder 20C; wherein the mass ratio of the lead powder 20A, tin powder 20B, and bismuth powder 20C is 21.12: 36.29: 42.59.

In an embodiment, the pump unit is a mechanical pump, which is used to suck the gas in the cavity to 0.05 Torr, and then pass 30A of argon to 760 Torr, and then suck the gas in the cavity to 0.05 Torr, and then argon gas 30A to 760 Torr, the gas in the cavity was sucked to 0.05 Torr.

In one embodiment, the temperature control unit 300 heats the cavity 30 until 360 degrees Celsius, and maintains the metal powder 20 'to melt into the metal melt 20 for 20 minutes, and heats the metal powder 20' to melt into the During the process of the molten metal 20, the molten metal 20 is rotated and stirred.

In an embodiment, the die-casting unit is a programmable logic-controlled die-casting machine table for pressurizing the molten metal 20 inside the cavity 30 to fill the plurality of holes 102 of the nanoporous substrate 10 ( As shown in FIG. 3G), a plurality of nanowires 1 are formed by die-casting.

In an embodiment, the manufacturing method S1A of the present invention may be as shown in FIG. 5. After step S15 in FIG. 1A, a heat treatment process step S16 is performed to form the nanowires into a plurality of single crystal nanowires.

The invention also provides a single crystal nano wire, which is applied to a gas sensor. The composition includes: lead powder with a mass ratio of 21.12%, tin powder with a mass ratio of 36.29%, and bismuth powder with a mass ratio of 42.59%. 60 ~ 80nm.

That is, the present invention proposes a method S2 for mass production of single crystal nanowires, including: Step S21: preparing a nanoporous alumina substrate, and the surface of the nanoporous alumina substrate is covered with a plurality of parallel-arranged Through-holes, the pore diameters of these through-holes range from 60 to 80 nm, and there are about 10 ¹² through-holes per square centimeter; step S22: providing three metal powders of lead, tin, and bismuth. The mass ratio is 21.12% of lead powder, 36.29% of tin powder, and 42.59% of bismuth powder. The particle size of these metal powders is less than 100 μm, and they are evenly spread on the nanoporous alumina substrate. The porous alumina substrate is made into a cavity, and a mechanical pump is used in the cavity to suck the gas in the cavity to 0.05 Torr, and then pass argon to 760 Torr, and then the gas in the cavity Suction to 0.05 Torr, and then pass argon to 760 Torr, draw the gas in the cavity to 0.05 Torr to establish a high vacuum environment; step S24: heat the interior of the cavity to 360 degrees and maintain for 20 minutes Melting the metal powder into a molten metal, heating the metals During the process of melting the powder into the molten metal, the molten metal is rotated and stirred; step S25: a programmable logic control die-casting machine is used to pressurize the molten metal inside the cavity to fill the nanometer. The holes of the porous alumina substrate are die-cast into a plurality of nanowires; step S26: the nanowires are annealed at 120 degrees Celsius for 96 hours; and step S27: the nanowires are subjected to Celsius A single hour quenching treatment was performed below zero to form a plurality of single crystal nanowires.

When the nanowire manufactured by the present invention is applied to a gas sensing mechanism, the ratio of atoms located on the surface of the particles to atoms located inside the particles increases as the particles become smaller, causing the surface atoms to easily deviate from the lattice position and scatter. To a gaseous state, this phenomenon is called surface effect. Due to the surface effect of nanomaterials, the bonding force between the inner and outer layer atoms is weakened. Therefore, the surface layer atoms are likely to chemically bond with the van der Waals force of gas molecules, and then adsorb gas molecules. If the adsorption process is a reduction reaction, it will reduce the surface energy barrier, help electrons flow, and reduce resistance. Conversely, if an oxidizing gas is adsorbed, the resistance will increase. Therefore, resistance measurement can be used to verify the ability of nanomaterials to adsorb specific gas molecules.

The foregoing implementation manners or embodiments of the technical means adopted by the present invention are not intended to limit the scope of patent implementation of the present invention. That is, all changes and modifications that are consistent with the meaning of the scope of patent application of the present invention, or made according to the scope of patent of the present invention, are covered by the scope of patent of the present invention.

Claims (10)

    A method for mass production of nanowires includes: preparing a nanoporous substrate, and the surface of the nanoporous substrate is covered with a plurality of through-holes arranged in parallel; and one or more metal powders are provided. The diameter is less than 100 μm, evenly spread on the nanoporous substrate; the nanoporous substrate is made into a cavity, and a high vacuum environment is established in the cavity; the interior of the cavity is heated to make the The metal powder is melted into a metal melt; and the metal melt inside the cavity is pressurized, so that the holes filled in the nanoporous substrate are die-cast into a plurality of nanowires.     According to the mass production and manufacturing method of nanowires according to item 1 of the scope of patent application, the method for preparing a nanoporous substrate is: a pretreatment step: preparing multiple aluminum foils to remove surface impurities of the aluminum foils It is then placed in a high-temperature furnace and then taken out after baking; an electrolytic polishing step: each of the aluminum foils is coated with a copper plate, cross-fixed into a grid shape, and a graphite rod is placed in each of the grids, and positive and negative lead wires are connected to form a An aluminum foil device, which is placed in an electrolytic solution and electrified for electrolytic polishing, and then taken out; a first anodizing step: the aluminum foil device is placed in an oxalic acid solution to be energized, and an aluminum oxide layer is formed on the surfaces of the aluminum foils Take out; a step of dissolving the alumina layer: put the aluminum foil device into a sodium hydroxide solution, wait for the alumina layer to dissolve and take it out; a second anodizing step: put the aluminum foil device into an oxalic acid solution again Apply electricity to make an aluminum oxide layer on the surface of the aluminum foils and take it out; a step of removing the pure aluminum layer: remove the aluminum foils from the aluminum foil device and place the aluminum foils into In a solution of copper chloride, hydrochloric acid, and deionized water, wait for the pure aluminum layer at the bottom of the aluminum foils to dissolve and remove; and remove the barrier layer: put the aluminum foils into a sodium hydroxide solution. Wait for the barrier layer at the bottom of the aluminum foil to dissolve and disappear to complete a nanoporous alumina plate. The surface of the nanoporous substrate is covered with a plurality of parallel through holes, and the pores have a pore diameter of 60 ~ 80nm. There are about 10 ¹² holes per square centimeter.     The method for mass-producing nanowires according to item 1 of the scope of patent application, wherein the one or more metal powders include lead powder, tin powder, and bismuth powder. The mass ratio is 21.12% of lead powder, 36.29% of tin powder, and 42.59% of bismuth powder.         The mass production manufacturing method of nanowires as described in the first item of the patent application scope, wherein the way to establish the high vacuum environment is to use a mechanical pump to suck the gas in the cavity to 0.05 Torr, and then pass argon The gas in the cavity is 760 Torr, and then the gas in the cavity is sucked to 0.05 Torr, and then the argon gas is sucked in to 760 Torr, and the gas in the cavity is sucked to 0.05 Torr.         The mass production manufacturing method for nanowires according to item 1 of the scope of patent application, wherein the cavity is heated to 360 degrees Celsius, and the metal powder is melted into the metal melt for 20 minutes, and the metals are heated During the process of melting the powder into the molten metal, the molten metal is rotated and stirred.         The mass production manufacturing method for nanowires according to item 1 of the scope of patent application, wherein a programmable logic-controlled die-casting machine is used to pressurize the metal melt inside the cavity to fill the nanoporous substrate. The multiple holes are die-cast into multiple nano wires.         The method for mass production of nanowires according to item 1 of the scope of patent application, wherein, after die-casting into a plurality of nanowires, a heat treatment process is performed to form the nanowires into a plurality of single-crystal nanometers. Wire.         The mass production manufacturing method of nanowires according to item 7 of the scope of patent application, wherein the heat treatment process includes a first heat treatment process and a second heat treatment process, and the first heat treatment process is performed at 120 ° C for 96 hours. Annealing treatment, the second heat treatment program is a quenching treatment at zero degrees Celsius or less for 1 hour.     A method for mass production of single-crystal nanowires includes preparing a nanoporous alumina substrate, and the surface of the nanoporous alumina substrate is covered with a plurality of parallel-arranged through-holes. At 60 ~ 80nm, there are about 10 ¹² through holes per square centimeter; three metal powders of lead, tin and bismuth are provided. The mass ratio of these lead powder, tin powder and bismuth powder is 21.12% of lead powder, 36.29% of tin powder, Bismuth powder is 42.59%. The particle size of these metal powders is less than 100 μm, and they are evenly spread on the nanoporous alumina substrate. The nanoporous alumina substrate is made into a cavity and placed in the cavity. A mechanical pump is used to suck the gas in the cavity to 0.05 Torr, and then pass argon to 760 Torr, and then suck the gas in the cavity to 0.05 Torr, and then pass argon to 760 Torr. The gas in the cavity is pumped to 0.05 Torr to establish a high vacuum environment; the inside of the cavity is heated to 360 degrees and maintained for 20 minutes to melt the metal powders into a metal melt, and heat the metal powders to melt into In the process of the metal melt, the metal melt is transferred. And stirring; using a programmable logic-controlled die-casting machine to pressurize the metal melt inside the cavity to die-cast the holes filled into the nanoporous alumina substrate into a plurality of nano-wires; The nanowires are annealed at 120 degrees Celsius for 96 hours; and the nanowires are quenched at zero degrees Celsius for 1 hour to form a plurality of single crystal nanowires. A nano-wire manufacturing device is used for mass-producing nano-wires. The structure includes: a cavity having an accommodation space inside the cavity; a nano-porous substrate; and a surface of the nano-porous substrate. Filled with a plurality of holes arranged in parallel, the pores having a pore diameter ranging from 60 to 80 nm, and about 10 ¹² holes per square centimeter, the nanoporous substrate is placed in the accommodation space inside the cavity; one or more Metal powder with a particle size of less than 100 μm, evenly spread on the nanoporous substrate; a pump unit for sucking or passing gas into the cavity to change the inside of the cavity Gas type and gas pressure; a temperature control unit for heating the temperature inside the cavity to melt the metal powders on the nanoporous substrate inside the cavity into a molten metal; a die casting unit Is used to pressurize the metal melt to fill the holes of the nanoporous substrate, and die-cast into a plurality of nanowires.