TW201912839A - Microetching agent and method of manufacturing wiring board - Google Patents

Microetching agent and method of manufacturing wiring board Download PDF

Info

Publication number
TW201912839A
TW201912839A TW107125153A TW107125153A TW201912839A TW 201912839 A TW201912839 A TW 201912839A TW 107125153 A TW107125153 A TW 107125153A TW 107125153 A TW107125153 A TW 107125153A TW 201912839 A TW201912839 A TW 201912839A
Authority
TW
Taiwan
Prior art keywords
copper
micro
etching agent
polymer
etching
Prior art date
Application number
TW107125153A
Other languages
Chinese (zh)
Inventor
斉藤知志
福井優
Original Assignee
日商Mec股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商Mec股份有限公司 filed Critical 日商Mec股份有限公司
Publication of TW201912839A publication Critical patent/TW201912839A/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • C23F1/16Acidic compositions
    • C23F1/18Acidic compositions for etching copper or alloys thereof
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/38Improvement of the adhesion between the insulating substrate and the metal
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/38Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/382Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
    • H05K3/383Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal by microetching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

This microetching agent contains an inorganic acid, cupric ions, halide ions, and a water-soluble cationic polymer which contains a quaternary ammonium group in a side chain, while having a weight average molecular weight of 1,000 or more. The molar concentration of the halide ions is 5 to 100 times the molar concentration of the cupric ions in this microetching agent. It is preferable that the pH of this microetching agent is 2 or less. By using this microetching agent, a copper surface is able to be provided with a roughened shape that exhibits excellent adhesion to a resin and the like even if the amount of etching is low.

Description

微蝕刻劑以及配線基板的製造方法    Micro-etching agent and manufacturing method of wiring board   

本發明係關於一種銅的微蝕刻劑以及配線基板的製造方法。 The invention relates to a copper micro-etching agent and a method for manufacturing a wiring board.

製造印刷配線基板時,為了提高銅表面與阻焊劑等樹脂材料之密接性,藉由微蝕刻劑(粗化劑)將銅表面粗化。作為銅或銅合金的微蝕刻劑,已知有機酸系微蝕刻劑(例如專利文獻1)以及無機酸系微蝕刻劑(例如專利文獻2)。該等微蝕刻劑包含酸及氧化劑,進而,為了調整粗化形狀或蝕刻速度等,而添加有鹵素、聚合物、銨鹽、胺類、界面活性劑等。 When manufacturing a printed wiring board, in order to improve the adhesion between the copper surface and resin materials such as solder resist, the copper surface is roughened with a micro-etching agent (roughening agent). As the micro-etching agent for copper or copper alloy, organic acid-based micro-etching agents (for example, Patent Document 1) and inorganic acid-based micro-etching agents (for example, Patent Document 2) are known. These micro-etching agents include an acid and an oxidizing agent, and in addition, halogens, polymers, ammonium salts, amines, surfactants, and the like are added to adjust the roughening shape, etching rate, and the like.

[先前技術文獻] [Prior Technical Literature]

[專利文獻] [Patent Literature]

專利文獻1:WO2014/017115號公報。 Patent Document 1: WO2014 / 017115.

專利文獻2:WO2007/024312號公報。 Patent Document 2: WO2007 / 024312.

[技術方案] [Technical solutions]

於利用微蝕刻劑之粗化中,蝕刻量越大,粗化進行越多, 因此有與樹脂等之密接性提高之傾向。另一方面,若藉由微蝕刻劑將銅配線粗化,則有時伴隨蝕刻之進行而產生線變細,產生高電阻化或斷線等不良情況。伴隨配線之窄間距化(微細配線化),配線之線變細之影響變得顯著,因此要求能夠以低蝕刻量實現高密接性之微蝕刻劑。 In the roughening using a micro-etching agent, the larger the etching amount, the more roughening is performed, and therefore, there is a tendency for the adhesion to the resin and the like to be improved. On the other hand, if the copper wiring is roughened with a micro-etching agent, the line may become thinner as the etching progresses, and defects such as increased resistance or disconnection may occur. Along with the narrowing of the wiring (fine wiring), the influence of the thinning of the wiring becomes significant, so a micro-etching agent capable of achieving high adhesion with a low etching amount is required.

專利文獻1之有機酸系微蝕刻劑即便蝕刻量為1μm以下,亦可於銅表面形成與阻焊劑等之密接性優異之粗化形狀。但是,由於有機酸系微蝕刻劑以高濃度含有有機酸或銨鹽等,故而需要專用之排水、廢液處理設備,難謂通用性高。 The organic acid-based micro-etching agent of Patent Document 1 can form a roughened shape excellent in adhesion with a solder resist or the like on the copper surface even if the etching amount is 1 μm or less. However, since the organic acid-based micro-etching agent contains organic acid, ammonium salt, etc. in a high concentration, dedicated drainage and waste liquid treatment equipment is required, which is hardly versatile.

專利文獻2中,記載有藉由包含聚伸乙基亞胺之鹽酸系微蝕刻劑,可以1.5μm左右之蝕刻量於銅表面形成與阻焊劑等之密接性優異之粗化形狀。無機酸系蝕刻劑與有機酸系蝕刻劑相比,具有排水及廢液處理容易之優點。但是,為了使用無機酸系蝕刻劑來確保與樹脂之密接性,與使用有機酸系蝕刻劑之情形相比,必須增大蝕刻量。 Patent Document 2 describes that a hydrochloric acid-based micro-etching agent containing polyethylenimine can form a roughened shape excellent in adhesion with a solder resist or the like on a copper surface at an etching amount of about 1.5 μm. Compared with organic acid-based etchant, inorganic acid-based etchant has the advantage of easy drainage and waste liquid treatment. However, in order to use an inorganic acid-based etchant to ensure adhesion to the resin, it is necessary to increase the amount of etching compared to the case of using an organic acid-based etchant.

鑒於上述情況,本發明之目的在於提供一種無機酸系微蝕刻劑,即便以低蝕刻量,亦能夠於銅表面形成與樹脂等之密接性優異之粗化形狀。 In view of the above circumstances, an object of the present invention is to provide an inorganic acid-based micro-etching agent that can form a roughened shape with excellent adhesion to resin or the like on a copper surface even at a low etching amount.

本發明係關於一種銅的微蝕刻劑,用於銅的表面粗化。再者,本說明書中的「銅」包括銅及銅合金。另外,「銅層」亦包括銅配線圖案層。本發明之微蝕刻劑係包含無機酸、銅離子、 鹵化物離子以及陽離子性聚合物的無機酸系微蝕刻劑。陽離子性聚合物係在側鏈上含有四級銨基且重量平均分子量為1000以上的水溶性聚合物。微蝕刻劑中的鹵化物離子的莫耳濃度為銅離子的莫耳濃度之5至100倍。微蝕刻劑的pH較佳為2以下。銅離子的重量濃度較佳為聚合物的重量濃度之50倍至2000倍。 The invention relates to a copper micro-etching agent, which is used for copper surface roughening. In addition, "copper" in this specification includes copper and copper alloy. In addition, "copper layer" also includes a copper wiring pattern layer. The micro-etching agent of the present invention is an inorganic acid-based micro-etching agent containing inorganic acid, copper ion, halide ion and cationic polymer. The cationic polymer is a water-soluble polymer containing a quaternary ammonium group in the side chain and having a weight average molecular weight of 1,000 or more. The molar concentration of the halide ion in the micro-etching agent is 5 to 100 times that of the copper ion. The pH of the micro-etching agent is preferably 2 or less. The weight concentration of copper ions is preferably 50 times to 2000 times the weight concentration of the polymer.

進而,本發明係關於一種配線基板的製造方法,製造包含銅層之配線基板。配線基板的製造方法具有使上述微蝕刻劑接觸於銅表面而進行粗化之步驟(粗化處理步驟)。於粗化處理步驟中,為了將微蝕刻劑的組成保持為預定範圍,亦可於微蝕刻劑中添加補給液。粗化處理中的蝕刻量例如為1μm以下。再者,所謂「蝕刻量」,係指深度方向的平均蝕刻量(溶解量),係根據藉由微蝕刻劑溶解之銅的重量、比重及銅表面的前面投影面積所算出之值。以下之「蝕刻量」亦相同。 Furthermore, the present invention relates to a method of manufacturing a wiring board, which manufactures a wiring board including a copper layer. The method of manufacturing a wiring board includes a step of roughening the micro-etching agent by contacting the copper surface (roughening treatment step). In the roughening treatment step, in order to maintain the composition of the micro-etching agent within a predetermined range, a replenishing solution may be added to the micro-etching agent. The etching amount in the roughening treatment is, for example, 1 μm or less. In addition, the "etching amount" refers to the average etching amount (dissolving amount) in the depth direction, and is calculated based on the weight and specific gravity of copper dissolved by the micro-etching agent and the front projection area of the copper surface. The following "etching amount" is also the same.

根據本發明,即便以低蝕刻量,亦可於銅表面形成與樹脂等之密接性優異之粗化形狀。 According to the present invention, even with a low etching amount, a roughened shape excellent in adhesion with resin or the like can be formed on the copper surface.

圖1係藉由調配1之溶液進行過處理之銅表面的掃描式電子顯微鏡照片。 Fig. 1 is a scanning electron microscope photograph of the copper surface treated by the solution of preparation 1.

圖2係藉由調配2之溶液進行過處理之銅表面的掃描式電子顯微鏡照片。 Fig. 2 is a scanning electron microscope photograph of the copper surface treated with the solution of preparation 2.

圖3係藉由調配3之溶液進行過處理之銅表面的掃描式電子顯微鏡照片。 Fig. 3 is a scanning electron microscope photograph of the copper surface treated by the preparation of the solution of 3.

圖4係藉由調配8之溶液進行過處理之銅表面的掃描式電子顯微鏡照片。 Fig. 4 is a scanning electron microscope photograph of the copper surface treated by the preparation of the solution of 8.

圖5係藉由調配9之溶液進行過處理之銅表面的掃描式電子顯微鏡照片。 Fig. 5 is a scanning electron microscope photograph of the copper surface treated by the preparation of the solution of 9.

圖6係藉由調配10之溶液進行過處理之銅表面的掃描式電子顯微鏡照片。 Fig. 6 is a scanning electron microscope photograph of the copper surface treated by the preparation of 10 solutions.

圖7係藉由調配11之溶液進行過處理之銅表面的掃描式電子顯微鏡照片。 Fig. 7 is a scanning electron microscope photograph of the copper surface treated by the preparation of the solution of 11.

圖8係藉由調配12之溶液進行過處理之銅表面的掃描式電子顯微鏡照片。 Fig. 8 is a scanning electron microscope photograph of the copper surface treated by the preparation of the solution of 12.

圖9係藉由調配13之溶液進行過處理之銅表面的掃描式電子顯微鏡照片。 Fig. 9 is a scanning electron microscope photograph of the copper surface treated by the preparation of the 13 solution.

圖10係藉由調配18之溶液進行過處理之銅表面的掃描式電子顯微鏡照片。 FIG. 10 is a scanning electron microscope photograph of the copper surface treated by the preparation of the 18 solution.

圖11係藉由調配19之溶液進行過處理之銅表面的掃描式電子顯微鏡照片。 FIG. 11 is a scanning electron microscope photograph of the copper surface treated with the solution of 19.

圖12係藉由調配20之溶液進行過處理之銅表面的掃描式電子顯微鏡照片。 FIG. 12 is a scanning electron microscope photograph of the copper surface treated by the preparation of the 20 solution.

圖13係藉由調配21之溶液進行過處理之銅表面的掃描式電子顯微鏡照片。 Fig. 13 is a scanning electron microscope photograph of the copper surface treated by the preparation of the solution of 21.

圖14係藉由調配22之溶液進行過處理之銅表面的掃描式電子顯微鏡照片。 Fig. 14 is a scanning electron microscope photograph of the copper surface treated by the preparation of the 22 solution.

圖15係藉由調配23之溶液進行過處理之銅表面的掃描式電子顯微鏡照片。 Fig. 15 is a scanning electron microscope photograph of the copper surface treated with the solution of 23.

圖16係藉由調配24之溶液進行過處理之銅表面的掃描式電子顯微鏡照片。 Fig. 16 is a scanning electron microscope photograph of the copper surface treated by the preparation of the 24 solution.

圖17係藉由調配25之溶液進行過處理之銅表面的掃描式電子顯微鏡照片。 Fig. 17 is a scanning electron microscope photograph of the copper surface treated by the preparation of the 25 solution.

圖18係藉由調配26之溶液進行過處理之銅表面的掃描式電子顯微鏡照片。 Fig. 18 is a scanning electron microscope photograph of the copper surface treated by the preparation of the 26 solution.

圖19係藉由調配27之溶液進行過處理之銅表面的掃描式電子顯微鏡照片。 FIG. 19 is a scanning electron microscope photograph of the copper surface treated by the preparation of 27 solution.

圖20係焊料耐熱性試驗中,評價結果A之試片的表面照片。 FIG. 20 is a photograph of the surface of the test piece of the evaluation result A in the solder heat resistance test.

圖21係焊料耐熱性試驗中,評價結果B之試片的表面照片。 FIG. 21 is a photograph of the surface of the test piece of the evaluation result B in the solder heat resistance test.

圖22係焊料耐熱性試驗中,評價結果X之試片的表面照片。 FIG. 22 is a photograph of the surface of the test piece of the evaluation result X in the solder heat resistance test.

[微蝕刻劑的組成] [Composition of Micro Etching Agent]

本發明之微蝕刻劑係用於銅的表面粗化。微蝕刻劑係包含無機酸、銅離子、鹵化物離子及聚合物的酸性水溶液。以下,對本發明之微蝕刻劑中所含之各成分進行說明。 The micro-etching agent of the present invention is used for roughening the surface of copper. The micro-etching agent is an acidic aqueous solution containing inorganic acids, copper ions, halide ions, and polymers. Hereinafter, each component contained in the micro-etching agent of the present invention will be described.

<銅離子> <Copper ion>

銅離子係作為用以將銅氧化之氧化劑發揮作用。作為微蝕刻劑中所調配之銅離子源,可列舉:氯化銅、溴化銅等鹵化銅;硫酸銅、硝酸銅等無機酸鹽;甲酸銅、乙酸銅等有機酸鹽;氫氧化銅;氧化銅等。鹵化銅於水溶液中生成銅離子與鹵化物離子,因此可用作具有鹵化物離子源與銅離子源兩者之作用之物質。作為銅離子源,較佳為鹵化銅、氧化銅或無機酸鹽。再者,使氧化銅與鹽酸等鹵化氫酸共存之情形的組成與溶解有鹵化銅之情形同等。氧化銅較佳為快速且容易地溶解於酸的氧化銅,較理想為「使用不溶性陽極之銅鍍覆液」等中所使用之易溶性 氧化銅。 The copper ion system acts as an oxidizing agent for oxidizing copper. Examples of the copper ion source prepared in the micro-etching agent include: copper halide such as copper chloride and copper bromide; inorganic acid salts such as copper sulfate and copper nitrate; organic acid salts such as copper formate and copper acetate; copper hydroxide; Copper oxide, etc. Copper halide generates copper ions and halide ions in an aqueous solution, so it can be used as a substance having both the halide ion source and the copper ion source. As the copper ion source, copper halide, copper oxide, or inorganic acid salt is preferred. In addition, the composition in the case where copper oxide and a halogenated hydrogen acid such as hydrochloric acid coexist is the same as the case in which copper halide is dissolved. The copper oxide is preferably a copper oxide that dissolves quickly and easily in an acid, and is more preferably a soluble copper oxide used in "a copper plating solution using an insoluble anode".

微蝕刻劑的銅離子濃度較佳為0.0005莫耳/L至0.5莫耳/L,更佳為0.001莫耳/L至0.3莫耳/L,進而較佳為0.005莫耳/L至0.2莫耳/L以下。藉由調整銅離子濃度,蝕刻速度成為適當範圍,因此容易控制蝕刻量。 The copper ion concentration of the micro-etching agent is preferably 0.0005 moles / L to 0.5 moles / L, more preferably 0.001 moles / L to 0.3 moles / L, and further preferably 0.005 moles / L to 0.2 moles / L below. By adjusting the copper ion concentration, the etching rate becomes an appropriate range, so it is easy to control the etching amount.

<無機酸> <Inorganic acid>

酸具有使藉由銅離子氧化之銅溶解於水溶液中之功能,並且亦具有調整pH之功能。微蝕刻劑的pH較佳為2以下,更佳為1.5以下,進而較佳為1以下。即便於伴隨蝕刻之進行而溶液中的銅離子濃度上升之情形時,若pH為上述範圍,則亦可抑制氫氧化銅等之析出。因此,溶液的穩定性高,可於銅表面形成與樹脂等之密接性優異之粗化形狀。 The acid has a function of dissolving copper oxidized by copper ions in an aqueous solution, and also has a function of adjusting pH. The pH of the microetching agent is preferably 2 or less, more preferably 1.5 or less, and still more preferably 1 or less. That is, when it is convenient to increase the concentration of copper ions in the solution as the etching progresses, if the pH is within the above range, precipitation of copper hydroxide or the like can also be suppressed. Therefore, the stability of the solution is high, and a roughened shape with excellent adhesion to resin or the like can be formed on the copper surface.

就將微蝕刻劑的pH保持得低之觀點而言,使用無機酸作為酸。無機酸與有機酸相比,於水溶液中不易配位於銅離子。因此,藉由使用無機酸,可適當地保持微蝕刻劑中的銅離子的作為氧化劑的作用。作為無機酸,較佳為鹽酸、氫溴酸等鹵化氫酸、硫酸、硝酸等強酸。鹵化氫酸可用作具有鹵化物離子源與酸兩者之作用之物質。因此,本發明之微蝕刻劑較佳為包含鹵化氫酸作為無機酸。鹵化氫酸中,較佳為鹽酸(氯化氫水溶液)。酸可併用2種以上,亦可除無機酸以外使用少量的有機酸。微蝕刻劑的酸濃度較佳為以pH成為上述範圍之方式進行調整。 From the viewpoint of keeping the pH of the micro-etching agent low, an inorganic acid is used as the acid. Compared with organic acids, inorganic acids are less likely to coordinate with copper ions in aqueous solutions. Therefore, by using an inorganic acid, it is possible to appropriately maintain the role of copper ions in the micro-etching agent as an oxidizing agent. The inorganic acid is preferably a strong acid such as halogenated hydrogen acid such as hydrochloric acid or hydrobromic acid, sulfuric acid or nitric acid. The hydrogen halide acid can be used as a substance having both the halide ion source and the acid. Therefore, the micro-etching agent of the present invention preferably contains a halogenated hydrogen acid as an inorganic acid. Among the halogenated hydrogen acids, hydrochloric acid (hydrogen chloride aqueous solution) is preferred. Two or more acids can be used in combination, and a small amount of organic acids can be used in addition to inorganic acids. The acid concentration of the micro-etching agent is preferably adjusted so that the pH falls within the above range.

<鹵化物離子> <Halide ion>

鹵化物離子具有輔助銅之溶解,形成密接性優異之銅層表面之功能。作為鹵化物離子,可例示氯化物離子、溴化物離子等。其中,就均勻地形成密接性優異之粗化形狀之觀點而言,較佳為氯化物離子。微蝕刻劑中亦可包含2種以上之鹵化物離子。 The halide ion has the function of assisting the dissolution of copper and forming the surface of the copper layer with excellent adhesion. Examples of the halide ion include chloride ion and bromide ion. Among them, from the viewpoint of uniformly forming a roughened shape excellent in adhesion, chloride ion is preferable. The microetching agent may contain two or more kinds of halide ions.

作為微蝕刻劑中所調配之鹵化物離子源,可列舉:鹽酸、氫溴酸等鹵化氫酸;氯化鈉、氯化鈣、氯化鉀、氯化銨、溴化鉀、溴化鈉、氯化銅、溴化銅、氯化鋅、氯化鐵、溴化錫等金屬鹽等。鹵化物離子源亦可併用2種以上。如上所述,鹵化氫酸具有鹵化物離子源與酸兩者之作用,鹵化銅具有鹵化物離子源與銅離子源兩者之作用。 Examples of the halide ion source prepared in the micro-etching agent include hydrogen halide acids such as hydrochloric acid and hydrobromic acid; sodium chloride, calcium chloride, potassium chloride, ammonium chloride, potassium bromide, sodium bromide, Copper chloride, copper bromide, zinc chloride, ferric chloride, tin bromide and other metal salts. Two or more halide ion sources can be used in combination. As described above, the hydrogen halide acid has the functions of both the halide ion source and the acid, and the copper halide has the functions of both the halide ion source and the copper ion source.

就促進於銅表面形成粗化形狀之觀點而言,微蝕刻劑中的鹵化物離子的濃度較佳為0.005莫耳/L至10莫耳/L,更佳為0.05莫耳/L至5莫耳/L,進而較佳為0.1莫耳/L至3莫耳/L。藉由將鹵化物離子濃度設為上述範圍,有如下之傾向:促進藉由銅之氧化所生成之亞銅離子於溶液中之溶解,抑制於銅層表面生成汙物。再者,如下所述,微蝕刻劑包含相對於銅離子而言過量的鹵化物離子。因此,鹵化物離子濃度的適當範圍根據銅離子濃度而設定。 From the viewpoint of promoting the formation of a roughened shape on the copper surface, the concentration of halide ions in the micro-etching agent is preferably 0.005 mol / L to 10 mol / L, more preferably 0.05 mol / L to 5 mol Ear / L, and further preferably 0.1 mole / L to 3 mole / L. By setting the halide ion concentration to the above range, there is a tendency to promote the dissolution of cuprous ions generated by the oxidation of copper in the solution and to suppress the generation of contaminants on the surface of the copper layer. Furthermore, as described below, the micro-etching agent contains an excess of halide ions relative to copper ions. Therefore, the appropriate range of the halide ion concentration is set according to the copper ion concentration.

<聚合物> <Polymer>

本發明之微蝕刻劑含有在側鏈上具有四級銨基且重量平均分子量為1000以上的水溶性聚合物。聚合物與鹵化物離子一起具有形成密接性優異之粗化形狀之作用。於微蝕刻劑中,銅離子及鹵化物離子與在側鏈上具有四級銨基之聚合物共存,藉此 於銅的表面,可均勻地形成細的凹凸。就形成均勻的粗化形狀之觀點而言,聚合物的重量平均分子量較佳為2000以上,更佳為3000以上。就水溶性之觀點而言,聚合物的重量平均分子量較佳為500萬以下,更佳為200萬以下。重量平均分子量係藉由凝膠滲透層析(GPC;gel permeation chromatography)分析並利用聚乙二醇換算獲得之值。 The micro-etching agent of the present invention contains a water-soluble polymer having a quaternary ammonium group on the side chain and a weight average molecular weight of 1,000 or more. Together with the halide ion, the polymer has the effect of forming a roughened shape with excellent adhesion. In the micro-etching agent, copper ions and halide ions coexist with a polymer having a quaternary ammonium group on the side chain, whereby fine irregularities can be uniformly formed on the surface of copper. From the viewpoint of forming a uniform roughened shape, the weight average molecular weight of the polymer is preferably 2,000 or more, and more preferably 3,000 or more. From the viewpoint of water solubility, the weight average molecular weight of the polymer is preferably 5 million or less, and more preferably 2 million or less. The weight average molecular weight is a value obtained by gel permeation chromatography (GPC; gel permeation chromatography) analysis and conversion using polyethylene glycol.

作為在側鏈上具有四級銨基之聚合物,例如可列舉具有下述式(I)所表示之重複單元之聚合物。 Examples of the polymer having a quaternary ammonium group in the side chain include polymers having a repeating unit represented by the following formula (I).

式(I)中,R1至R3分別獨立地為可具有取代基之鏈狀或環狀之烴基,R1至R3中的2個以上亦可相互鍵結而形成環狀結構。R4為氫原子或甲基,X1為單鍵或2價連結基,Z-為抗衡陰離子。 In formula (I), R 1 to R 3 are each independently a chain or cyclic hydrocarbon group which may have a substituent, and two or more of R 1 to R 3 may be bonded to each other to form a cyclic structure. R 4 is a hydrogen atom or a methyl group, X 1 is a single bond or a divalent linking group, and Z - is a counter anion.

作為具有式(I)所表示之重複單元之聚合物的具體例,可列舉:四級銨鹽型苯乙烯聚合物、四級銨鹽型(甲基)丙烯酸胺基烷基酯聚合物等。 Specific examples of the polymer having a repeating unit represented by formula (I) include a quaternary ammonium salt type styrene polymer, a quaternary ammonium salt type (meth) acrylate aminoalkyl ester polymer, and the like.

在側鏈上具有四級銨基之聚合物亦可為如下述式(II)所 示,具有主鏈之碳原子與側鏈之四級銨基形成環狀結構之重複單元之聚合物。 The polymer having a quaternary ammonium group in the side chain may also be a polymer having a repeating unit in which a carbon atom in the main chain and a quaternary ammonium group in the side chain form a cyclic structure as shown in the following formula (II).

上述式(II)中,R5及R6為可具有取代基之鏈狀或環狀之烴基,R5與R6亦可相互鍵結而形成環狀結構。m為0至2之整數。X2及X3分別獨立地為單鍵或2價連結基。作為具有式(II)之重複單元之聚合物的具體例,可列舉藉由式(IIa)所表示之二烯丙基二烷基銨鹽之聚合所獲得之四級銨鹽型二烯丙基胺聚合物。 In the above formula (II), R 5 and R 6 are chain or cyclic hydrocarbon groups which may have a substituent, and R 5 and R 6 may be bonded to each other to form a cyclic structure. m is an integer from 0 to 2. X 2 and X 3 are each independently a single bond or a divalent linking group. As a specific example of the polymer having a repeating unit of formula (II), a quaternary ammonium salt type diallyl obtained by polymerization of diallyl dialkyl ammonium salt represented by formula (IIa) can be cited Amine polymer.

上述式(IIa)中,R7及R8分別獨立地為氫原子或可具有取代基之鏈狀或環狀之烴基,較佳為氫原子。 In the above formula (IIa), R 7 and R 8 are each independently a hydrogen atom or a chain or cyclic hydrocarbon group which may have a substituent, preferably a hydrogen atom.

側鏈之四級銨基亦可在氮原子與碳原子之間具有雙鍵。作為四級銨鹽之抗衡陰離子Z-,可列舉:Cl-、Br-、I-、ClO4 -、BF4 -、 CH3COO-、PF6 -、HSO4 -、C2H5SO4 -。於X1至X7為二價連結基之情形時,作為該二價連結基的具體例,可列舉:亞甲基、碳數2至10之伸烷基、伸芳基、-CONH-R-基、-COO-R-基(其中,R為單鍵、亞甲基、碳數2至10之伸烷基、或碳數2至10之醚基(烷氧基烷基))等。 The quaternary ammonium group of the side chain may also have a double bond between the nitrogen atom and the carbon atom. Quaternary ammonium salts as the counter anion Z -, include: Cl -, Br -, I -, ClO 4 -, BF 4 -, CH 3 COO -, PF 6 -, HSO 4 -, C 2 H 5 SO 4 - . When X 1 to X 7 are divalent linking groups, specific examples of the divalent linking group include methylene groups, alkylene groups having 2 to 10 carbon atoms, aryl groups, and -CONH-R -Group, -COO-R- group (wherein R is a single bond, methylene group, alkylene group having 2 to 10 carbon atoms, or ether group (alkoxyalkyl group) having 2 to 10 carbon atoms), etc.

在側鏈上含有四級銨基之聚合物亦可為共聚物。於聚合物為共聚物之情形時,共聚物亦可包含含有四級銨基之重複單元及不含四級銨基之重複單元。共聚物中的重複單元的排列並無特別限定,可為交替共聚物、嵌段共聚物、無規共聚物之任一種。於共聚物為嵌段共聚物或無規共聚物之情形時,含有四級銨基之重複單元相對於聚合物整體之單體單元的比例較佳為20莫耳%以上,更佳為30莫耳%以上,進而較佳為40莫耳%以上。作為不含四級銨基之重複單元,可列舉源自(甲基)丙烯酸、(甲基)丙烯酸烷基酯、(甲基)丙烯酸胺基烷基酯、(甲基)丙烯醯胺、苯乙烯衍生物、二氧化硫等之結構。 The polymer containing a quaternary ammonium group on the side chain may also be a copolymer. When the polymer is a copolymer, the copolymer may also include a repeating unit containing a quaternary ammonium group and a repeating unit not containing a quaternary ammonium group. The arrangement of the repeating units in the copolymer is not particularly limited, and may be any of alternating copolymers, block copolymers, and random copolymers. When the copolymer is a block copolymer or a random copolymer, the ratio of the repeating unit containing quaternary ammonium groups to the monomer unit of the entire polymer is preferably 20 mole% or more, more preferably 30 mole Ear% or more, and more preferably 40 mole% or more. Examples of the repeating unit not containing a quaternary ammonium group include (meth) acrylic acid, alkyl (meth) acrylate, aminoalkyl (meth) acrylate, (meth) acrylamide, and benzene. Structures of ethylene derivatives, sulfur dioxide, etc.

上述之專利文獻2中,使用低分子量之聚伸乙基亞胺作為無機酸系微蝕刻劑之聚合物,但即便使用分子量未達1000之低分子量聚伸乙基亞胺,亦無法以低蝕刻量形成微細的粗化形狀。上述之專利文獻1中,記載有使用高分子量之聚伸乙基亞胺作為有機酸系微蝕刻劑之聚合物之例。本發明之微蝕刻劑主要使用無機酸作為酸,因此pH低。在主鏈上具有陽離子性基之聚伸乙基亞胺於強酸性下不穩定,難以形成微細的粗化形狀。相對於此,在側鏈上含有四級銨基之陽離子性聚合物於pH1以下之強酸性下亦穩定,有助於形成微細的粗化形狀。 In the above Patent Document 2, low molecular weight polyethylenimine is used as the polymer of the inorganic acid-based micro-etching agent, but even if a low molecular weight polyethylenimine having a molecular weight of less than 1,000 is used, it cannot The amount forms a fine roughened shape. The aforementioned Patent Document 1 describes an example of using a high molecular weight polyethylenimine as a polymer of an organic acid-based micro-etching agent. The micro-etching agent of the present invention mainly uses an inorganic acid as an acid, so the pH is low. Polyethylenimine having a cationic group in the main chain is unstable under strong acidity, and it is difficult to form a fine roughened shape. In contrast, cationic polymers containing quaternary ammonium groups in the side chain are also stable under strong acidity below pH 1 and contribute to the formation of fine roughened shapes.

就形成密接性優異之銅層表面之觀點而言,微蝕刻劑中的聚合物的濃度較佳為0.0002g/L至0.2g/L,更佳為0.001g/L至0.04g/L,進而較佳為0.004g/L至0.02g/L。再者,如下所述,微蝕刻劑中的聚合物濃度的適當範圍根據銅離子濃度而設定。 From the viewpoint of forming the surface of the copper layer excellent in adhesion, the concentration of the polymer in the micro-etching agent is preferably 0.0002 g / L to 0.2 g / L, more preferably 0.001 g / L to 0.04 g / L, and It is preferably 0.004 g / L to 0.02 g / L. In addition, as described below, the appropriate range of the polymer concentration in the micro-etching agent is set according to the copper ion concentration.

<各成分的比率> <Ratio of each component>

本發明之微蝕刻劑的特徵之一在於,含有相對於銅離子而言過量的鹵化物離子。微蝕刻劑的鹵化物離子濃度(莫耳濃度)較佳為銅離子濃度之5倍以上,更佳為7倍以上,進而較佳為10倍以上。藉由微蝕刻劑含有相對於銅離子而言過量的鹵化物離子,即便以低蝕刻量,亦可於銅表面形成與樹脂等之密接性優異之粗化形狀。就形成均勻的粗化形狀之觀點而言,鹵化物離子濃度較佳為銅離子濃度之100倍以下,更佳為70倍以下,進而較佳為50倍以下。 One of the characteristics of the micro-etching agent of the present invention is that it contains an excessive amount of halide ions relative to copper ions. The halide ion concentration (molar concentration) of the micro-etching agent is preferably 5 times or more of the copper ion concentration, more preferably 7 times or more, and still more preferably 10 times or more. Since the micro-etching agent contains an excessive amount of halide ions relative to copper ions, even at a low etching amount, it is possible to form a roughened shape with excellent adhesion to resin or the like on the copper surface. From the viewpoint of forming a uniform roughened shape, the halide ion concentration is preferably 100 times or less the copper ion concentration, more preferably 70 times or less, and still more preferably 50 times or less.

於包含鹵化物離子及作為氧化劑之銅離子之蝕刻劑中,金屬銅被氧化,銅離子被還原,藉此生成亞銅離子。由於氯化銅(I)等鹵化亞銅的溶解度小,故而於銅表面析出不溶性之汙物。另一方面,由於1個亞銅離子與4個鹵化物離子形成可溶性之錯合物,因此若存在過量的鹵素,則鹵化亞銅迅速地再溶解。亦即,於存在過量的鹵素之情形時,可抑制於銅表面堆積汙物,因此成為構成微蝕刻劑之各成分容易接觸於金屬銅表面之環境。可認為在此種環境下,容易表現出上述之陽離子性聚合物之作用,即便以低蝕刻量,亦容易形成與樹脂之密接性優異之微細凹凸。 In an etchant containing halide ions and copper ions as an oxidant, metallic copper is oxidized and copper ions are reduced, thereby generating cuprous ions. Since the solubility of cuprous halide such as copper chloride (I) is small, insoluble contaminants are deposited on the copper surface. On the other hand, since one cuprous ion and four halide ions form a soluble complex, if there is an excessive amount of halogen, the cuprous halide quickly re-dissolves. That is, in the presence of excessive halogen, it is possible to suppress the accumulation of contaminants on the copper surface, so that each component constituting the micro-etching agent can easily contact the metal copper surface. It is considered that in such an environment, the effect of the above-mentioned cationic polymer is easily exhibited, and even with a low etching amount, it is easy to form fine irregularities excellent in adhesion with the resin.

就提高利用陽離子性聚合物之表面形狀形成作用之觀點而言,蝕刻劑中的銅離子的重量濃度較佳為陽離子性聚合物的重量濃度之50倍至2000倍,更佳為100倍至1500倍,進而較佳為200倍至1000倍。 From the viewpoint of improving the surface shape formation effect using the cationic polymer, the weight concentration of copper ions in the etchant is preferably 50 times to 2000 times the weight concentration of the cationic polymer, more preferably 100 times to 1500 Times, and more preferably 200 times to 1000 times.

<其他添加劑> <Other additives>

本發明之微蝕刻劑可藉由使上述之各成分溶解於離子交換水等而製備。微蝕刻劑中,亦可包含上述以外之成分。例如,以粗化之均勻化為目的,亦可添加非離子性界面活性劑。非離子性界面活性劑亦作為消泡劑發揮作用。此外,亦可視需要添加各種添加劑。於使用該等添加劑之情形時,微蝕刻劑中的添加劑的濃度較佳為0.0001重量%至20重量%左右。 The micro-etching agent of the present invention can be prepared by dissolving the aforementioned components in ion-exchanged water or the like. The microetching agent may contain components other than the above. For example, for the purpose of homogenization of roughening, a nonionic surfactant may also be added. Nonionic surfactants also function as defoamers. In addition, various additives may be added as needed. When using these additives, the concentration of the additives in the microetching agent is preferably about 0.0001% by weight to 20% by weight.

[微蝕刻劑的用途] [Use of micro-etching agent]

上述之微蝕刻劑可廣泛地用於銅層表面之粗化。於經處理之銅表面均勻地形成微細的凹凸,與預浸體、抗鍍覆層、抗蝕刻層、阻焊劑、抗電沈積層、覆蓋層等樹脂之密接性良好。另外,由於經粗化之銅表面焊接性亦優異,故而於製造包含針柵陣列(PGA;pin grid array)用或球柵陣列(BGA;ball grid array)用之各種配線基板時尤其有用。進而,對於引線框架的表面處理亦有用。 The above micro-etchants can be widely used for roughening the surface of the copper layer. It forms fine irregularities uniformly on the surface of the treated copper, and has good adhesion to resins such as prepreg, anti-plating layer, anti-etching layer, solder resist, anti-electrodeposition layer, and covering layer. In addition, since the roughened copper surface is also excellent in solderability, it is particularly useful when manufacturing various wiring substrates including a pin grid array (PGA) or ball grid array (BGA). Furthermore, it is also useful for the surface treatment of a lead frame.

尤其是,本發明之微蝕刻劑能夠以低蝕刻量形成密接性優異之表面,因此對於需要微細的銅配線之印刷配線基板、扇出型晶圓級封裝(FOWLP;Fan-out wafer level package)、大規模積 體電路(LSI;large scale integration)之再配線銅層等之密接提高處理有用,有助於抑制銅配線之高電阻化或斷線。 In particular, the micro-etching agent of the present invention can form a surface with excellent adhesion at a low etching amount, so for printed wiring boards requiring fine copper wiring, fan-out wafer level packages (FOWLP; Fan-out wafer level package) 1. The large-scale integrated circuit (LSI; large scale integration) rewiring copper layer, etc., is useful for improving the adhesion, and helps to suppress the high resistance or disconnection of copper wiring.

[配線基板的製造方法] [Manufacturing method of wiring board]

製造配線基板時,藉由使上述之微蝕刻劑接觸於銅表面,而將銅的表面粗化。於製造包含多層銅層之配線基板之情形時,可利用上述之微蝕刻劑對多個銅層中的僅一層進行處理,亦可利用上述之微蝕刻劑對兩層以上之銅層進行處理。 When manufacturing a wiring board, the copper surface is roughened by contacting the above-mentioned micro-etching agent with the copper surface. In the case of manufacturing a wiring board including multiple copper layers, only one of the plurality of copper layers may be processed using the above-mentioned micro-etching agent, or two or more copper layers may be processed using the above-mentioned micro-etching agent.

於粗化處理中,使微蝕刻劑接觸於銅表面之方法並無特別限定,例如可列舉:對處理對象之銅層表面噴霧微蝕刻劑之方法、或將處理對象之銅層浸漬於微蝕刻劑中之方法等。於進行噴霧之情形時,較佳為於微蝕刻劑的溫度10℃至40℃、噴霧壓0.03MPa至0.3MPa、5秒至120秒之條件下進行蝕刻。於進行浸漬之情形時,較佳為於微蝕刻劑的溫度10℃至40℃、5秒至120秒之條件下進行蝕刻。再者,於進行浸漬之情形時,為了將藉由銅之蝕刻而於微蝕刻劑中所生成之亞銅離子氧化成銅離子,較佳為藉由起泡(bubbling)等向微蝕刻劑中吹入空氣。本發明之微蝕刻劑使用後的廢液處理容易,例如可藉由利用鹼之中和、利用高分子凝聚劑等之簡便方法進行處理。 In the roughening process, the method of contacting the micro-etching agent with the copper surface is not particularly limited. For example, a method of spraying the micro-etching agent on the surface of the copper layer to be treated, or immersing the copper layer to be treated by micro-etching The method in the agent. In the case of spraying, it is preferable to perform etching under the conditions of a microetching agent temperature of 10 ° C. to 40 ° C., a spray pressure of 0.03 MPa to 0.3 MPa, and 5 seconds to 120 seconds. In the case of performing the immersion, it is preferable to perform the etching under the conditions of the micro-etching agent at a temperature of 10 ° C. to 40 ° C. for 5 seconds to 120 seconds. In addition, in the case of immersion, in order to oxidize the cuprous ions generated in the micro-etching agent by copper etching to copper ions, it is preferable to add the micro-etching agent by bubbling etc. Blow in the air. The waste liquid after the use of the micro-etching agent of the present invention is easy to handle, for example, it can be processed by a simple method such as neutralization with an alkali and a polymer coagulant.

利用微蝕刻劑之粗化處理後的銅表面的L*值較佳為70以下,更佳為65以下。L*值係L*a*b*色空間(JIS Z 8781-4)中的亮度L*,係利用後述之實施例中所記載之方法進行測定。未處理之銅箔具有金屬光澤,L*為80至90左右。關於表面經粗化之銅箔,入射光於多方向發生漫反射,且使反射重複而衰減。因 此,若將銅箔粗化而形成微細的凹凸形狀,則有L*值變小之傾向。 The L * value of the copper surface after roughening treatment with a micro etchant is preferably 70 or less, and more preferably 65 or less. The L * value is the brightness L * in the L * a * b * color space (JIS Z 8781-4), which is measured by the method described in the examples described later. The untreated copper foil has metallic luster and L * is about 80 to 90. Regarding the roughened copper foil, the incident light diffusely reflects in multiple directions, and the reflection is repeated to attenuate. Therefore, if the copper foil is roughened to form a fine uneven shape, the L * value tends to become smaller.

銅表面的L*值可藉由調整微蝕刻劑的調配比率或蝕刻量而控制為上述範圍內。於本發明之一實施形態中,可以銅層表面的L*值成為上述範圍之方式,調整微蝕刻劑的調配比或蝕刻量(蝕刻時間)。例如,亦可藉由微蝕刻劑對銅層表面進行粗化處理後,一面監視粗化處理後的銅層表面的L*值,一面控制後述之補給液的添加量或補給液的添加時間點。 The L * value of the copper surface can be controlled within the above range by adjusting the preparation ratio or etching amount of the micro-etching agent. In one embodiment of the present invention, the blending ratio or etching amount (etching time) of the micro-etching agent may be adjusted so that the L * value on the surface of the copper layer falls within the above range. For example, after roughening the surface of the copper layer with a micro-etching agent, the L * value of the surface of the copper layer after roughening can be monitored while controlling the amount of replenishment solution or the time point of replenishment solution to be described later .

粗化處理中的蝕刻量並無特別限定。就提高與樹脂之密接性之觀點而言,蝕刻量較佳為0.05μm以上,更佳為0.1μm以上。於需要微細配線之印刷配線基板之阻焊劑被覆步驟的預處理等中,若蝕刻量過大,則有時會產生因銅層完全蝕刻所致之斷線、或因配線截面面積減小所致之電阻增大等不良情況。因此,蝕刻量較佳為1μm以下,更佳為0.7μm以下,進而較佳為0.5μm以下。 The amount of etching in the roughening treatment is not particularly limited. From the viewpoint of improving the adhesion with the resin, the etching amount is preferably 0.05 μm or more, and more preferably 0.1 μm or more. In the pretreatment of the solder resist coating step of the printed wiring board that requires fine wiring, if the etching amount is too large, it may cause disconnection due to the complete etching of the copper layer, or due to the reduction in the cross-sectional area of the wiring Bad conditions such as increased resistance. Therefore, the etching amount is preferably 1 μm or less, more preferably 0.7 μm or less, and still more preferably 0.5 μm or less.

於連續使用微蝕刻劑之情形時,亦可一面添加補給液一面實施粗化處理。藉由一面添加補給液一面進行粗化處理,可將處理中的微蝕刻劑中的各成分的濃度維持為適當。作為補給液,較佳為包含伴隨蝕刻之進行而減少之成分(酸、鹵化物離子以及前述之聚合物)之水溶液。補給液中亦可包含氧化銅等銅離子源。補給液的添加量或補給液的添加時間點可根據各成分之濃度管理幅度等而適宜設定。補給液中的各成分與上述之微蝕刻劑中所含之成分相同。補給液中的各成分的濃度可根據用於 處理之微蝕刻劑的初期濃度等而適宜調整。補給液的組成亦可與建浴液(使用前的微蝕刻液)相同。 In the case where the micro-etching agent is continuously used, the roughening treatment may be performed while adding the replenishing liquid. By performing the roughening treatment while adding the replenishing liquid, the concentration of each component in the micro-etching agent during the treatment can be maintained to be appropriate. The replenishing liquid is preferably an aqueous solution containing components (acid, halide ion, and the aforementioned polymer) that decrease with the progress of etching. A copper ion source such as copper oxide may also be included in the replenisher. The addition amount of the replenishing liquid or the time point of the replenishing liquid can be appropriately set according to the concentration management range of each component. Each component in the replenishing solution is the same as the component contained in the above-mentioned micro-etching agent. The concentration of each component in the replenishing solution can be appropriately adjusted according to the initial concentration of the microetching agent used for the treatment and the like. The composition of the replenishing solution may be the same as the bath solution (micro-etching solution before use).

於粗化處理步驟後,亦可利用酸性水溶液將粗化表面洗淨。作為用於洗淨之酸性水溶液,可使用鹽酸、硫酸水溶液、硝酸水溶液等。就對粗化形狀之影響少,洗淨性高而言,較佳為鹽酸。酸性水溶液的酸濃度較佳為0.3重量%至35重量%,更佳為1重量%至10重量%。洗淨方法並無特別限定,可列舉:對經粗化之銅層表面噴霧酸性水溶液之方法、或將經粗化之銅層浸漬於酸性水溶液中之方法等。 After the roughening treatment step, the roughened surface can also be washed with an acidic aqueous solution. As the acidic aqueous solution for washing, hydrochloric acid, sulfuric acid aqueous solution, nitric acid aqueous solution, etc. can be used. In terms of less influence on the roughened shape and high detergency, hydrochloric acid is preferred. The acid concentration of the acidic aqueous solution is preferably 0.3% by weight to 35% by weight, and more preferably 1% by weight to 10% by weight. The cleaning method is not particularly limited, and examples include a method of spraying an acidic aqueous solution on the surface of the roughened copper layer, or a method of immersing the roughened copper layer in the acidic aqueous solution.

於利用微蝕刻劑之處理後,為了進一步提高與樹脂之密接性,亦可利用唑類水溶液或醇溶液進行處理。另外,於利用微蝕刻劑之處理後,亦可進行棕色氧化物處理或黑色氧化物處理等氧化處理。 After the treatment with the micro-etching agent, in order to further improve the adhesion with the resin, it can also be treated with an azole aqueous solution or an alcohol solution. In addition, after treatment with a micro-etching agent, oxidation treatment such as brown oxide treatment or black oxide treatment may also be performed.

[實施例] [Example]

其次,對本發明之實施例進行說明。再者,本發明並非限定於下述之實施例而進行解釋。 Next, an embodiment of the present invention will be described. Furthermore, the present invention is not limited to the following examples and explained.

[微蝕刻劑之製備] [Preparation of Micro Etching Agent]

按照表1-1至表1-2所示之調配,製備溶液(微蝕刻劑)。聚合物A至聚合物I之詳情如下所述。該等聚合物係以溶液中的濃度成為表中所示之調配量之方式使用。 According to the formulation shown in Table 1-1 to Table 1-2, a solution (microetching agent) was prepared. The details of Polymer A to Polymer I are as follows. These polymers are used in such a way that the concentration in the solution becomes the formulated amount shown in the table.

聚合物A:具有以下之結構之乙烯基吡咯啶酮-N,N-二甲基 胺基乙基甲基丙烯醯胺二乙基硫酸鹽無規共聚物(重量平均分子量約80萬)。 Polymer A: Vinylpyrrolidone-N, N-dimethylaminoethylmethacrylamide diethyl sulfate random copolymer (weight average molecular weight about 800,000) having the following structure.

聚合物B:具有以下之重複單元之二烯丙基二甲基銨鹽酸鹽-二氧化硫交替共聚物(重量平均分子量約5000)。 Polymer B: a diallyldimethylammonium hydrochloride-sulfur dioxide alternating copolymer having the following repeating units (weight average molecular weight about 5000).

聚合物C:丙烯醯胺-丙烯酸二甲基胺基乙酯甲基氯化物四級鹽共聚物(重量平均分子量約200萬)。 Polymer C: Acrylamide-dimethylaminoethyl acrylate methyl chloride quaternary salt copolymer (weight average molecular weight about 2 million).

聚合物D:甲基丙烯酸二甲基胺基乙酯硫酸二甲基四級鹽聚合物(重量平均分子量約30萬)。 Polymer D: dimethyl quaternary methacrylate sulfate dimethyl quaternary salt polymer (weight average molecular weight about 300,000).

聚合物E:二烯丙基二甲基氯化銨之聚合物(重量平均分子量約30萬)。 Polymer E: polymer of diallyl dimethyl ammonium chloride (weight average molecular weight about 300,000).

聚合物F:聚(氧乙烯氧丙烯(5E.O.、5P.O.))二醇單醚(數量 平均分子量約510)。 Polymer F: poly (oxyethyleneoxypropylene (5E.O., 5P.O.)) glycol monoether (number average molecular weight about 510).

聚合物G:聚伸乙基亞胺(重量平均分子量約7萬)。 Polymer G: Polyethylenimine (weight average molecular weight about 70,000).

聚合物H:聚伸乙基亞胺(重量平均分子量約300)。 Polymer H: Polyethylenimine (weight average molecular weight about 300).

聚合物I:下述式所表示之乙二胺之聚氧乙烯-聚氧丙烯嵌段聚合物加成物。 Polymer I: polyoxyethylene-polyoxypropylene block polymer adduct of ethylenediamine represented by the following formula.

表中的調配成分的剩餘部分為離子交換水。調配26中,於調配2中添加甲酸(pKa=3.75)作為有機酸,利用離子交換水定容成1L後,滴加48%氫氧化鈉水溶液,調整為pH3.75(與有機酸的pKa相同的pH)。調配27中,於調配2中添加乙酸(pKa=4.76)作為有機酸,利用離子交換水定容成1L後,滴加48%氫氧化鈉水溶液,調整為pH4.76。該等溶液包含作為無機酸之鹽酸,但由於調整為有機酸鹽顯示緩衝能之pH區域,故而具有實質上與有機酸系蝕刻劑相同的組成。再者,僅使用無機酸之調配1至調配25之溶液的pH均為1.0以下。 The remaining part of the formulated ingredients in the table is ion-exchanged water. In formulation 26, formic acid (pKa = 3.75) was added as organic acid in formulation 2, and the volume was adjusted to 1 L with ion-exchanged water, and 48% sodium hydroxide aqueous solution was added dropwise to adjust to pH 3.75 (same as pKa of organic acid PH). In the preparation 27, acetic acid (pKa = 4.76) was added to the preparation 2 as an organic acid, and the volume was adjusted to 1 L with ion-exchanged water, and a 48% sodium hydroxide aqueous solution was added dropwise to adjust to pH 4.76. These solutions contain hydrochloric acid as an inorganic acid, but since they are adjusted to a pH region where the organic acid salt exhibits buffer energy, they have substantially the same composition as the organic acid-based etchant. In addition, the pH of the solutions of the formulation 1 to the formulation 25 using only inorganic acids are all 1.0 or less.

[利用微蝕刻劑之銅之處理] [Treatment of copper using micro-etching agent]

準備試驗基板,該試驗基板係於將厚度35μm之銅箔貼合於絕緣基材的兩面而成之含浸有玻璃布環氧樹脂之覆銅積層板(日立化成公司製造,製品名:MCL-E-67、10cm×10cm、厚度0.2mm),進行18μm之銅鍍覆而成。其次,將表1-1至表1-5所 示之各微蝕刻劑(30℃),在噴霧壓0.10MPa之條件下,噴霧至上述試驗基板的銅鍍覆層表面,以成為0.5μm之蝕刻量之方式,調整蝕刻時間而進行蝕刻。繼而,進行水洗,於溫度30℃之鹽酸(氯化氫濃度:3.5重量%)中,將蝕刻處理面浸漬10秒後,進行水洗,並使之乾燥。 Prepare a test board consisting of a copper clad laminate impregnated with glass cloth epoxy resin impregnated with 35 μm thick copper foil on both sides of an insulating substrate (manufactured by Hitachi Chemical Co., Ltd., product name: MCL-E -67, 10cm × 10cm, thickness 0.2mm), 18μm copper plating. Next, each micro-etching agent (30 ° C) shown in Table 1-1 to Table 1-5 was sprayed onto the surface of the copper plating layer of the above test substrate under a spray pressure of 0.10 MPa to become 0.5 μm. The etching amount is adjusted by adjusting the etching time. Then, it was washed with water, and the etching surface was immersed in hydrochloric acid (hydrogen chloride concentration: 3.5% by weight) at a temperature of 30 ° C. for 10 seconds, then washed with water and dried.

利用掃描式電子顯微鏡(SEM;scanning electron microscopy)(型號JSM-7000F,日本電子公司製造),觀察處理後的試驗基板的銅層的表面。SEM觀察圖像示於圖1至圖19。各溶液的調配與SEM觀察圖像之對應示於表1-1及表1-2。 Using a scanning electron microscope (SEM; scanning electron microscopy) (model JSM-7000F, manufactured by JEOL Ltd.), the surface of the copper layer of the test substrate after the treatment was observed. The SEM observation images are shown in FIGS. 1 to 19. The correspondence between the preparation of each solution and the SEM observation image is shown in Table 1-1 and Table 1-2.

<利用焊料耐熱性試驗之密接性評價> <Adhesion Evaluation by Solder Heat Resistance Test>

於上述乾燥後的試驗基板的蝕刻處理面,藉由積層壓製(壓製壓力:30MPa、溫度:170℃、時間:60分鐘)貼合含浸有玻璃布環氧樹脂之預浸體(日立化成公司製造,製品名:GEA-67N,厚度0.1mm)。繼而,切取所積層之基板的周邊部而製作試片。將該試片於120℃(相對濕度:100%)之環境中放置2小時後,於230℃之溶融焊料浴中浸漬30秒。以目視觀察浸漬後的各試片,將完全未見鼓出之試片評價為A(參照圖20),將於表面的10%以內的區域產生鼓出之區域評價為B(參照圖21),將於表面的10%以上的區域產生鼓出之試片評價為X(參照圖22)。結果示於表1-1及表1-2。再者,若銅箔與樹脂之密接性良好,則未見鼓出。 A prepreg impregnated with glass cloth epoxy resin (manufactured by Hitachi Chemical Co., Ltd.) was laminated on the etched surface of the test substrate after drying by lamination (pressing pressure: 30 MPa, temperature: 170 ° C., time: 60 minutes). , Product name: GEA-67N, thickness 0.1mm). Then, the peripheral part of the laminated substrate was cut out to prepare a test piece. The test piece was left in an environment of 120 ° C (relative humidity: 100%) for 2 hours, and then immersed in a molten solder bath at 230 ° C for 30 seconds. Visually observe each test piece after immersion, and evaluate the test piece with no bulging at all as A (refer to FIG. 20), and the area with bulging within 10% of the surface is evaluated as B (refer to FIG. 21) The test piece that swelled out over 10% of the surface was evaluated as X (see FIG. 22). The results are shown in Table 1-1 and Table 1-2. In addition, if the adhesion between the copper foil and the resin is good, no bulging is observed.

<基於L*值之粗化面評價> <Roughened surface evaluation based on L * value>

針對上述乾燥後的試驗基板的蝕刻處理面,任意地選擇3個部位,藉由柯尼卡美能達公司製造之色彩色差計(型號: CR-10),測定L*值,算出該L*值的平均值。結果示於表1-1及表1-2。 For the etched surface of the test substrate after drying, arbitrarily select 3 locations, and measure the L * value using a color difference meter (model: CR-10) manufactured by Konica Minolta, and calculate the L * value average value. The results are shown in Table 1-1 and Table 1-2.

根據表1-1及表1-2之結果可知,於粗化後的銅表面的L*值與焊料耐熱性試驗結果之間可見相關性,L*值越小,焊料耐熱性越良好,銅表面與樹脂之密接性越良好。 According to the results in Table 1-1 and Table 1-2, there is a correlation between the L * value of the roughened copper surface and the solder heat resistance test result. The smaller the L * value, the better the solder heat resistance and the copper The better the adhesion between the surface and the resin.

使用聚合物A之調配1至調配3中,均係粗化後的銅表面的L*值為55以下,形成了與樹脂之密接性優異之粗化形狀(參照圖1至圖3)。調配1至調配3中,各成分的濃度差異大,但由於鹵素與銅離子的莫耳濃度比以及銅離子與聚合物的重量濃度比為預定範圍,故而可認為形成了同等的粗化形狀。 In the formulations 1 to 3 using the polymer A, the L * value of the copper surface after roughening was 55 or less, and a roughened shape excellent in adhesion with the resin was formed (see FIGS. 1 to 3). In the formulations 1 to 3, the concentration difference of each component is large. However, since the molar concentration ratio of halogen to copper ions and the weight concentration ratio of copper ions to polymers are within a predetermined range, it can be considered that the same roughened shape is formed.

調配4至調配7中,粗化後的銅表面的L*值為65以下。另一方面,調配13至調配17(參照圖9)中,與調配1至調配11相比,粗化後的銅表面的L*值大,粗化形狀之形成不充分。 In Blend 4 to Blend 7, the L * value of the roughened copper surface is 65 or less. On the other hand, in the formulations 13 to 17 (see FIG. 9), the L * value of the roughened copper surface is larger than the formulations 1 to 11 and the formation of the roughened shape is insufficient.

根據該等結果可知,藉由調整鹵化物離子、銅離子及聚合物的調配比,即便以0.5μm左右之低蝕刻量,亦可形成與樹脂之密接性優異之粗化形狀。 From these results, it can be seen that by adjusting the compounding ratio of the halide ion, the copper ion, and the polymer, even at a low etching amount of about 0.5 μm, a roughened shape excellent in adhesiveness with the resin can be formed.

包含聚合物B至聚合物E代替聚合物A之調配8至調配11(參照圖4至圖7)中,亦與調配1至調配7同樣地,粗化後的銅表面的L*值為65以下。另一方面,未調配聚合物之調配12(參照圖8)以及包含聚合物G(高分子量之聚伸乙基亞胺)之調配20、調配21(參照圖12、圖13)中,表面被粗化,但與調配1至調配11相比,粗化後的銅表面的L*值較大,粗化形狀之形成不充分。 In the formulations 8 to 11 (refer to FIGS. 4 to 7) including the polymer B to the polymer E instead of the polymer A, the L * value of the roughened copper surface is 65 as well as the formulation 1 to the formulation 7 the following. On the other hand, in the formulation 12 (refer to FIG. 8) of the un-formulated polymer and the formulation 20 and formulation 21 (refer to FIGS. 12 and 13) including the polymer G (high molecular weight polyethylenimine), the surface was Roughening, but the L * value of the roughened copper surface is larger than that of Blending 1 to Blending 11, and the formation of the roughening shape is insufficient.

包含聚合物F(不含四級銨鹽之非離子性界面活性劑)之調配18、調配19(參照圖10、圖11)以及包含聚合物H(低分子量之聚伸乙基亞胺)之調配22、調配23(圖14、圖15)中,任一聚合物濃度下,表面均幾乎未被粗化,顯示較不含聚合物之調配12更大的L*值。使用聚合物I(乙二胺之衍生物聚合物)之調配24、調配25中,任一聚合物濃度下,銅表面均完全未被粗化。 Formula 18, Formula 19 (see Figure 10 and Figure 11) containing polymer F (non-ionic surfactant without quaternary ammonium salt) and Formula H containing low molecular weight polyethylenimine In Blend 22 and Blend 23 (Figures 14 and 15), at any polymer concentration, the surface was hardly roughened, showing a larger L * value than Blend 12 without polymer. In the formulation 24 and formulation 25 of Polymer I (derivative polymer of ethylenediamine), the copper surface was not roughened at any polymer concentration.

根據該等結果可知,於使用在側鏈上具有四級銨基之聚合物,且使用銅離子、鹵化物離子以及聚合物的調配比為預定範圍之無機酸系溶液之情形時,特殊地可於銅表面形成密接性優異之微細的凹凸形狀。 From these results, it can be seen that when a polymer having a quaternary ammonium group in the side chain is used, and an inorganic acid-based solution containing a copper ion, a halide ion, and a polymer compound ratio within a predetermined range is used, it is particularly possible A fine uneven shape with excellent adhesion is formed on the copper surface.

添加有機酸而調整為緩衝pH(與有機酸之pKa相同的pH)之調配26、調配27之有機酸系溶液中,與調配1至調配11相比,粗化後的銅表面的L*值大,粗化形狀之形成不充分。可認為粗化形狀之形成不充分的一個原因在於,pH高而藉由蝕刻所生成之銅離子的溶解性低。另外,可認為由於有機酸容易配位於銅離子,故而調配例26、調配例27之溶液中,銅離子的有效濃度降低,銅離子與鹵化物離子濃度之平衡被破壞亦會導致粗化形狀不充分。 The L * value of the roughened copper surface is adjusted to the buffered pH (the same pH as the pKa of the organic acid) of the organic acid solution of the adjustment 26 and the adjustment 27 by adding an organic acid, compared with the adjustment 1 to the adjustment 11 Large, insufficiently formed roughened shapes. One reason for the insufficient formation of the roughened shape is that the pH is high and the solubility of copper ions generated by etching is low. In addition, it is considered that organic acids are easily coordinated to copper ions. Therefore, in the solutions of Preparation Example 26 and Preparation Example 27, the effective concentration of copper ions is reduced, and the balance between the concentration of copper ions and halide ions is destroyed. full.

Claims (8)

一種微蝕刻劑,係用於銅的表面粗化的銅的微蝕刻劑,且包含無機酸、銅離子、鹵化物離子以及陽離子性聚合物;前述陽離子性聚合物係在側鏈上含有四級銨基且重量平均分子量為1000以上的水溶性聚合物;鹵化物離子的莫耳濃度為銅離子的莫耳濃度之5倍至100倍;pH為2以下。     A micro-etching agent, a copper micro-etching agent for roughening the surface of copper, and containing inorganic acids, copper ions, halide ions, and cationic polymers; the aforementioned cationic polymers contain four levels on the side chain A water-soluble polymer with an ammonium group and a weight average molecular weight of 1000 or more; the molar concentration of halide ions is 5 to 100 times the molar concentration of copper ions; the pH is 2 or less.     如請求項1所記載之微蝕刻劑,其中銅離子的莫耳濃度為0.001莫耳/L至0.5莫耳/L。     The micro-etching agent as described in claim 1, wherein the molar concentration of copper ions is 0.001 mol / L to 0.5 mol / L.     如請求項1或2所記載之微蝕刻劑,其中鹵化物離子的莫耳濃度為0.01莫耳/L至10莫耳/L。     The micro-etching agent as described in claim 1 or 2, wherein the molar concentration of the halide ion is 0.01 mol / L to 10 mol / L.     如請求項1或2所記載之微蝕刻劑,其中前述聚合物的重量濃度為0.0005g/L至0.5g/L。     The micro-etching agent according to claim 1 or 2, wherein the weight concentration of the aforementioned polymer is 0.0005 g / L to 0.5 g / L.     如請求項1或2所記載之微蝕刻劑,其中銅離子的重量濃度為前述聚合物的重量濃度之50倍至2000倍。     The micro-etching agent as described in claim 1 or 2, wherein the weight concentration of copper ions is 50 times to 2000 times the weight concentration of the aforementioned polymer.     一種配線基板的製造方法,製造包含銅層之配線基板,且具有:粗化處理步驟,前述粗化處理步驟係使如請求項1至5中任一項所記載之微蝕刻劑接觸於銅表面而將銅表面粗化。     A method of manufacturing a wiring board, which manufactures a wiring board including a copper layer, and has a roughening process step of contacting the copper surface with a micro-etching agent as described in any one of claims 1 to 5 The copper surface is roughened.     如請求項6所記載之配線基板的製造方法,其中將前述銅表面粗化時的深度方向的平均蝕刻量為1μm以下。     The method of manufacturing a wiring board according to claim 6, wherein the average etching amount in the depth direction when the copper surface is roughened is 1 μm or less.     如請求項6或7所記載之配線基板的製造方法,其中於前述粗化處理步驟中,將補給液添加至前述微蝕刻劑中,前述補給液由包含無機酸、鹵化物離子以及聚合物之酸性水溶液構成; 前述補給液中的前述聚合物係在側鏈上含有四級銨基且重量平均分子量為1000以上的水溶性聚合物。     The method of manufacturing a wiring board according to claim 6 or 7, wherein in the roughening treatment step, a replenishing liquid is added to the micro-etching agent, and the replenishing liquid is composed of a mineral acid, halide ion, and polymer. Acidic aqueous solution composition; The polymer in the replenishment solution is a water-soluble polymer containing a quaternary ammonium group in the side chain and having a weight average molecular weight of 1,000 or more.    
TW107125153A 2017-08-23 2018-07-20 Microetching agent and method of manufacturing wiring board TW201912839A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017160151A JP6333455B1 (en) 2017-08-23 2017-08-23 Copper microetching agent and method of manufacturing wiring board
JP2017-160151 2017-08-23

Publications (1)

Publication Number Publication Date
TW201912839A true TW201912839A (en) 2019-04-01

Family

ID=62236415

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107125153A TW201912839A (en) 2017-08-23 2018-07-20 Microetching agent and method of manufacturing wiring board

Country Status (5)

Country Link
JP (1) JP6333455B1 (en)
KR (1) KR20200043993A (en)
CN (1) CN111051571A (en)
TW (1) TW201912839A (en)
WO (1) WO2019039023A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6799347B1 (en) * 2020-06-02 2020-12-16 メック株式会社 Manufacturing method of micro etching agent and wiring board
CN113170585B (en) * 2020-06-02 2023-04-04 Mec股份有限公司 Microetching agent and method for producing wiring board
WO2022044893A1 (en) * 2020-08-24 2022-03-03 富士フイルム株式会社 Processing liquid, method for processing substrate
CN112725799A (en) * 2020-12-10 2021-04-30 昆山市板明电子科技有限公司 Environment-friendly copper surface roughening liquid and preparation method thereof
CN112708423B (en) * 2020-12-15 2022-08-05 河北中瓷电子科技股份有限公司 Acidic microetching reagent and method for treating metal lead
KR20220126436A (en) * 2021-03-09 2022-09-16 주식회사 이엔에프테크놀로지 Etchant composition for display substrate

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3432629B2 (en) * 1995-02-23 2003-08-04 日立化成工業株式会社 Surface treatment liquid for copper foil and method for producing multilayer printed wiring board using the treatment liquid
JP3458023B2 (en) * 1995-08-01 2003-10-20 メック株式会社 Copper and copper alloy microetchants
CN1195895C (en) * 1997-01-29 2005-04-06 美克株式会社 Micro etching agent of copper and copper alloy
US7393461B2 (en) * 2005-08-23 2008-07-01 Kesheng Feng Microetching solution
ES2348361T3 (en) * 2005-10-25 2010-12-03 Atotech Deutschland Gmbh METHOD FOR IMPROVED ADHESION OF POLYMER MATERIALS TO COPPER SURFACES OR COPPER ALLOYS.
US7875558B2 (en) * 2005-12-21 2011-01-25 Kesheng Feng Microetching composition and method of using the same
US7456114B2 (en) * 2005-12-21 2008-11-25 Kesheng Feng Microetching composition and method of using the same
JP4917872B2 (en) * 2006-12-08 2012-04-18 三新化学工業株式会社 Chemical solution for copper and / or copper alloy
US7645393B2 (en) * 2007-04-27 2010-01-12 Kesheng Feng Metal surface treatment composition
JP4967800B2 (en) * 2007-05-17 2012-07-04 凸版印刷株式会社 Copper solution and method for etching copper or copper alloy using the same
JP5443863B2 (en) * 2009-07-09 2014-03-19 株式会社Adeka Etching composition for copper-containing material and method for etching copper-containing material
JP2011233769A (en) * 2010-04-28 2011-11-17 Mec Co Ltd Method for forming copper wiring pattern
JP6135999B2 (en) * 2012-04-10 2017-05-31 三菱瓦斯化学株式会社 Liquid composition used for etching multilayer film containing copper and molybdenum, and etching method using the same
JP5219008B1 (en) * 2012-07-24 2013-06-26 メック株式会社 Copper microetching agent, replenisher thereof, and method for manufacturing wiring board
CN103890233B (en) * 2012-09-28 2016-01-20 Mec股份有限公司 The manufacture method of copper micro-etching agent and replenisher and circuit card
JP5559288B2 (en) * 2012-11-13 2014-07-23 メック株式会社 Printed wiring board manufacturing method and surface treatment apparatus
CN104955985B (en) * 2013-04-15 2018-07-20 Mec股份有限公司 The forming method of etching solution, bulking liquor and copper wiring
JP6218000B2 (en) * 2016-02-19 2017-10-25 メック株式会社 Copper microetching agent and method of manufacturing wiring board

Also Published As

Publication number Publication date
JP2019039027A (en) 2019-03-14
WO2019039023A1 (en) 2019-02-28
CN111051571A (en) 2020-04-21
JP6333455B1 (en) 2018-05-30
KR20200043993A (en) 2020-04-28

Similar Documents

Publication Publication Date Title
TW201912839A (en) Microetching agent and method of manufacturing wiring board
JP6218000B2 (en) Copper microetching agent and method of manufacturing wiring board
JP5219008B1 (en) Copper microetching agent, replenisher thereof, and method for manufacturing wiring board
US6426020B1 (en) Etchant for copper or copper alloys
TWI704254B (en) Copper microetching agent, method for roughening copper surface, and method for manufacturing wiring board
TWI467053B (en) Micro-etching agent containing copper,its feeding liquor and the manufacturing method of wiring substrate
WO2017141799A1 (en) Microetchant for copper and method for producing wiring board
TWI732727B (en) Micro-etching agent and manufacturing method of wiring board
KR102404620B1 (en) Method for manufacturing micro etchant and wiring board
JP6598917B2 (en) Copper micro-etchant