TW201906043A - Image assist method for placing chip and chip apparatus using the method - Google Patents

Image assist method for placing chip and chip apparatus using the method

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TW201906043A
TW201906043A TW106120471A TW106120471A TW201906043A TW 201906043 A TW201906043 A TW 201906043A TW 106120471 A TW106120471 A TW 106120471A TW 106120471 A TW106120471 A TW 106120471A TW 201906043 A TW201906043 A TW 201906043A
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image
crystallizing
wafer
crystallized
substrate
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TW106120471A
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TWI651795B (en
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盧彥豪
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梭特科技股份有限公司
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Priority to US16/044,505 priority patent/US10694651B2/en
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Publication of TWI651795B publication Critical patent/TWI651795B/en

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Abstract

An image assist method for placing chip is provided in the present invention. The method comprises a fetching step, a reference image capturing step, an alignment-image capture step, a calculating processing step, a calibration adjusting step and a placing step. In the reference image capturing step, a reference image which covers an image reference member and a chip sucked by a chip placement member is captured from the direction to the image reference member, and the image reference member to the chip relative position relation information is obtained. In the alignment-image capture step, an image reference member to substrate position relation image which covers the image reference member and the substrate is captured from the back direction of the image reference member. In the calculating processing step, a location calibration relationship information between the chip position and the position-to-be-placed is calculated. In the calibration adjusting step, correcting the relative position between the chip placement member and the position-to-be-placed so that the position of the chip sucked by the chip placement member is aligned with the position-to-be-placed.

Description

影像輔助的置晶方法及置晶設備Image-assisted crystallizing method and crystal setting device

本發明相關於一種置晶方法及置晶設備,特別是相關於一種影像輔助的置晶方法及置晶設備。The invention relates to a crystal crystallization method and a crystal arranging device, in particular to an image-assisted crystallization method and a crystal arranging device.

在半導體晶圓級封裝的製程中,必須將晶圓切割成複數晶粒,再從中挑出良品,重新配置到基板上以進行後續的加工。在重新配置的過程中,由於精密製程的因素,故對晶粒置放位置、排列的精確度有極為嚴格的要求,通常要求微米以下甚至更小的精確度。為了確保置晶的高精確度,傳統的置晶設備通常在置晶前,透過一影像擷取機構拍攝機械手臂放置校正晶片後的狀況,以紀錄校正晶片在各個待置晶的基板位置誤差,重複數次後取得誤差平均值,以其各個位置平均誤差來補償實際置晶時晶片與基板的相對位置。In the process of semiconductor wafer level packaging, the wafer must be cut into a plurality of crystal grains, and then the good products are picked out and reconfigured onto the substrate for subsequent processing. In the process of reconfiguration, due to the precision process, the accuracy of the placement and arrangement of the crystal grains is extremely strict, and the accuracy below micron or less is usually required. In order to ensure the high precision of the crystal, the conventional crystallizing device usually records the condition of the robot after placing the calibration wafer through an image capturing mechanism before the crystal is set, to record the position error of the wafer in each substrate to be crystallized. After repeating several times, the error average value is obtained, and the relative position of the wafer and the substrate at the time of actual crystallizing is compensated by the average error of each position.

然而,上述方法必須耗費時間地反覆多次以建立其各個位置之平均誤差以供實際置晶時補償使用,並且當有新的誤差原因(如溫度變化產生結構熱變形)產生時,無法及時修正誤差,而須重新建立各個位置誤差表,因此若使用此種方法置晶,無法較有效率且即時地達到更嚴格的準度及精度的要求。However, the above method must be repeated over time to establish an average error of its respective positions for compensation in actual crystallizing, and cannot be corrected in time when new error causes (such as structural changes in temperature due to temperature changes) occur. Errors, but each position error table must be re-established, so if you use this method to crystallize, you can't achieve more stringent accuracy and accuracy more efficiently and instantly.

因此,為解決上述問題,本發明的目的即在提供一種影像輔助的置晶方法及置晶設備。Therefore, in order to solve the above problems, an object of the present invention is to provide an image-assisted crystallizing method and a crystallizing apparatus.

本發明為解決習知技術之問題所採用之技術手段係提供一種影像輔助的置晶方法,用於移動一置晶設備的一置晶構件至一待置晶基板的一待置晶部位,該置晶設備包括一置晶機構、一基準影像擷取機構及一對位影像擷取機構,該置晶機構包括該置晶構件及一設置於該置晶構件外圍的影像基準構件,該置晶方法包含:一取晶步驟,利用該置晶構件吸取一晶片;一基準影像擷取步驟,利用該基準影像擷取機構自該影像基準構件的對向方向擷取涵蓋有該影像基準構件以及該置晶構件吸取的該晶片的一基準影像,而得到該晶片與該影像基準構件之間的相對位置的一影像基準構件對晶片相對位置關係資訊;一對位影像擷取步驟,利用該對位影像擷取機構自該影像基準構件的背向方向擷取涵蓋有該影像基準構件及一待置晶基板的一影像基準構件對基板位置關係影像;一計算處理步驟,依據該影像基準構件對基板位置關係影像以及該影像基準構件對晶片相對位置關係資訊,而推算出該置晶構件吸取的該晶片位置與該待置晶基板上的一待置晶部位之間的一位置校正關係資訊;一校正調整步驟,依據該位置校正關係資訊而校正調整該置晶構件與該待置晶部位之間的相對位置,使該置晶構件吸取的該晶片之位置為對準該待置晶部位;以及一置晶步驟,使該置晶構件執行置晶。The technical means for solving the problems of the prior art provides an image-assisted crystallizing method for moving a crystallizing member of a crystallizing device to a to-be-crystallized portion of a substrate to be crystallized, The crystal morphing device comprises a crystal morphing mechanism, a reference image capturing mechanism and a pair of image capturing mechanisms, the crystallization mechanism comprising the morphing member and an image reference member disposed on the periphery of the morphing member, the crystallization The method includes: a crystal removing step of drawing a wafer by using the crystallizing member; and a reference image capturing step, wherein the reference image capturing mechanism captures the image reference member from the opposite direction of the image reference member and a reference image of the wafer taken by the crystallizing member to obtain a relative positional relationship between the image reference member and the wafer at a relative position between the wafer and the image reference member; a pair of bit image capturing steps, using the alignment The image capturing mechanism captures a positional relationship between the image reference member and the substrate including the image reference member and a substrate to be crystallized from a back direction of the image reference member a calculation processing step, based on the image reference member-to-substrate positional relationship image and the image reference member-to-wafer relative position relationship information, and estimating the position of the wafer sucked by the crystallizing member and the substrate on the substrate to be crystallized a position correction relationship information between the portions to be crystallized; a correction adjustment step of correcting and adjusting the relative position between the crystallizing member and the portion to be crystallized according to the position correction relationship information, so that the crystallizing member absorbs The position of the wafer is aligned with the portion to be crystallized; and a seeding step is performed to cause the crystallizing member to perform crystallization.

在本發明的一實施例中係提供一種影像輔助的置晶方法,該計算處理步驟係依據該影像基準構件對基板位置關係影像中的該待置晶基板的一視覺特徵以及該影像基準構件對晶片相對位置關係資訊而推算出該位置校正關係資訊。In an embodiment of the present invention, an image-assisted crystallizing method is provided, wherein the calculating processing step is based on a visual feature of the image-receiving substrate in the substrate position-relationship image and the image reference member pair. The position correction relationship information is derived from the relative positional relationship information of the wafer.

本發明為解決習知技術之問題所採用之另一技術手段係提供一種置晶設備,包含:一置晶機構,包括一置晶構件及一設置於該置晶構件外圍的影像基準構件,該置晶構件用以吸取一晶片以及執行置晶;一基準影像擷取機構,經設置而自該影像基準構件及該置晶構件的對向方向擷取涵蓋有該影像基準構件以及該置晶構件吸取的該晶片的一基準影像,而得到該晶片與該影像基準構件之間的相對位置的一影像基準構件對晶片相對位置關係資訊;一對位影像擷取機構,經設置而自該影像基準構件的背向方向擷取涵蓋有該影像基準構件及一待置晶基板的一影像基準構件對基板位置關係影像;一控制系統,包括:一移動單元,動力連接該置晶機構;一計算處理單元,訊號連接該基準影像擷取機構及該對位影像擷取機構,該計算處理單元經設置而依據該影像基準構件對基板位置關係影像以及該影像基準構件對晶片相對位置關係資訊,而推算出該置晶構件吸取的該晶片位置與該待置晶基板上的一待置晶部位之間的一位置校正關係資訊;以及一校正調整單元,訊號連接該計算處理單元及該移動單元,該校正調整單元經設置而依據該位置校正關係資訊而校正調整該置晶構件與該待置晶部位之間的相對位置,使該置晶構件吸取的該晶片之位置為對準該待置晶部位。Another technical means for solving the problems of the prior art is to provide a crystallizing apparatus, comprising: a crystal seeding mechanism comprising a crystallizing member and an image reference member disposed on a periphery of the crystallizing member, The crystallizing member is configured to pick up a wafer and perform crystallizing; and a reference image capturing mechanism configured to capture the image reference member and the crystallizing member from the opposite direction of the image reference member and the crystallizing member Extracting a reference image of the wafer to obtain a relative positional relationship between the image reference member and the wafer at a relative position between the wafer and the image reference member; a pair of bit image capturing mechanisms configured to be from the image reference The back direction of the component captures an image reference member-to-substrate positional relationship image of the image reference member and a substrate to be crystallized; a control system comprising: a mobile unit, the power connection mechanism; and a calculation process a unit, the signal is connected to the reference image capturing mechanism and the alignment image capturing mechanism, and the computing processing unit is configured to be based on the image reference A position-correcting relationship between the position information of the substrate and the positional relationship of the image reference member to the wafer, and calculating a positional correction relationship between the position of the wafer sucked by the crystallizing member and a portion to be crystallized on the substrate to be crystallized And a correction adjustment unit, the signal is connected to the calculation processing unit and the mobile unit, and the correction adjustment unit is configured to correct and adjust the relative position between the crystallized member and the to-be-crystallized portion according to the position correction relationship information. The position of the wafer sucked by the crystallizing member is aligned with the portion to be crystallized.

在本發明的一實施例中係提供一種置晶設備,該影像基準構件為一光罩或一具有影像特徵標誌的透光構件。In an embodiment of the invention, a crystal setting device is provided, the image reference member being a photomask or a light transmissive member having an image signature.

在本發明的一實施例中係提供一種置晶設備,該校正調整單元依據該位置校正關係資訊,控制該移動單元細微調整該置晶構件,使該置晶構件吸取的該晶片之位置為對準該待置晶部位。In an embodiment of the present invention, a crystal setting device is provided, and the correction adjustment unit controls the mobile unit to finely adjust the crystallizing member according to the position correction relationship information, so that the position of the wafer sucked by the crystallizing member is The site to be crystallized.

在本發明的一實施例中係提供一種置晶設備,更包括一承載該待置晶基板的移動載台,該移動載台訊號連接該校正調整單元,該校正調整單元依據該位置校正關係資訊,細微調整該移動載台以使該置晶構件吸取的該晶片之位置為對準該待置晶部位。In an embodiment of the invention, a crystallizing apparatus is further provided, further comprising a moving stage carrying the substrate to be crystallized, the moving stage signal is connected to the correction adjusting unit, and the correction adjusting unit corrects the relationship information according to the position The moving stage is finely adjusted so that the position of the wafer sucked by the crystallizing member is aligned with the portion to be crystallized.

在本發明的一實施例中係提供一種置晶設備,更包括一標記,刻印於該待置晶基板,該計算處理單元係依據該影像基準構件對基板位置關係影像中的該待置晶基板的該標記的影像以及該影像基準構件對晶片相對位置關係資訊而推算出該位置校正關係資訊。In an embodiment of the present invention, a crystallizing apparatus is further provided, further comprising: a mark imprinted on the substrate to be crystallized, wherein the computing processing unit is based on the substrate to be crystallized in the image positional relationship image of the image reference member The image of the mark and the relative positional relationship information of the image reference member to the wafer are used to derive the position correction relationship information.

經由本發明所採用之技術手段,可精確地移動置晶構件至待置晶基板的各個待置晶部位,藉此大幅提高置晶(待置晶基板B有標記)或排列(待置晶基板B無標記)的精度以及準度。Through the technical means adopted by the present invention, the crystallizing member can be accurately moved to each of the to-be-crystallized portions of the substrate to be crystallized, thereby greatly increasing the crystallization (the substrate B to be marked) or the alignment (the substrate to be crystallized) B is unmarked) accuracy and accuracy.

本發明所採用的具體實施例,將藉由以下之實施例及附呈圖式作進一步之說明。The specific embodiments of the present invention will be further described by the following examples and the accompanying drawings.

以下根據第1圖至第4圖,而說明本發明的實施方式。該說明並非為限制本發明的實施方式,而為本發明之實施例的一種。Hereinafter, embodiments of the present invention will be described based on Figs. 1 to 4 . This description is not intended to limit the embodiments of the invention, but is an embodiment of the invention.

參閱第1圖所示,並配合參閱第2圖至第4圖,本實施例之說明如下。本發明一實施例的影像輔助的置晶方法,用於移動一置晶設備100的一置晶構件11至一待置晶基板B的一待置晶部位。置晶設備100包含一置晶機構1、一基準影像擷取機構2、一對位影像擷取機構3及一控制系統4。本實施例的影像輔助的置晶方法包含一取晶步驟S101、一基準影像擷取步驟S102、一對位影像擷取步驟S103、一計算處理步驟S104、一校正調整步驟S105及一置晶步驟S106。Referring to Fig. 1, and referring to Figs. 2 to 4, the description of this embodiment is as follows. The image-assisted crystallizing method of one embodiment of the present invention is used to move a crystallizing member 11 of a crystallizing device 100 to a to-be-crystallized portion of a substrate B to be crystallized. The crystal device 100 includes a crystallizing mechanism 1, a reference image capturing mechanism 2, a pair of image capturing mechanisms 3, and a control system 4. The image-assisted crystallizing method of the embodiment includes a crystal removing step S101, a reference image capturing step S102, a pair of bit image capturing step S103, a calculating processing step S104, a correction adjusting step S105, and a crystal setting step. S106.

置晶機構1包括一置晶構件11及一設置於置晶構件11外圍的影像基準構件12,置晶構件11用以吸取一晶片D以及執行置晶。在本實施例中,置晶構件11係為一吸取式的機械手臂,但本發明不限於此。影像基準構件12為具有影像特徵符號之透光材質的物件,例如為一光罩。The crystal platen mechanism 1 includes a crystal plate member 11 and an image reference member 12 disposed on the periphery of the crystal plate member 11. The crystal plate member 11 is configured to suck a wafer D and perform crystallizing. In the present embodiment, the crystallizing member 11 is a suction type robot arm, but the invention is not limited thereto. The image reference member 12 is an object of a light transmissive material having an image feature symbol, such as a photomask.

控制系統4包括:一移動單元41、一計算處理單元42及一校正調整單元43。移動單元41動力連接置晶機構1。計算處理單元42訊號連接基準影像擷取機構2及對位影像擷取機構3。校正調整單元43訊號連接計算處理單元42及移動單元41。The control system 4 includes a mobile unit 41, a calculation processing unit 42, and a correction adjustment unit 43. The moving unit 41 is operatively coupled to the seeding mechanism 1. The calculation processing unit 42 is connected to the reference image capturing mechanism 2 and the registration image capturing mechanism 3. The correction adjustment unit 43 signals the connection calculation processing unit 42 and the movement unit 41.

接著說明本發明實施例的置晶設備100如何執行該置晶方法。Next, how the crystallizing apparatus 100 of the embodiment of the present invention performs the crystallizing method will be described.

於取晶步驟S101,利用置晶構件11吸取一晶片D。In the crystallization step S101, a wafer D is taken up by the crystallizing member 11.

接著於基準影像擷取步驟S102,如第2圖所示,利用基準影像擷取機構2自影像基準構件12及置晶構件11的對向方向擷取涵蓋有影像基準構件12以及置晶構件11吸取的晶片D的一基準影像M1,而得到晶片D與影像基準構件12之間的相對位置的一影像基準構件對晶片相對位置關係資訊。其中,對向方向係指與影像基準構件12及置晶構件11相向的方向。在本實施例中,影像基準構件12的表面具有十字形的標記圖案;晶片D的表面具有特定的視覺外觀(在本實施例中以圓圈作為表示),但本發明不限於此,影像基準構件12的表面之圖案、排列方式亦可以為其他的標記形式,而晶片D的表面也可以是其他種類的視覺外觀。Next, in the reference image capturing step S102, as shown in FIG. 2, the reference image capturing means 2 captures the image reference member 12 and the crystallizing member 11 from the opposite direction of the image reference member 12 and the crystallizing member 11. A reference image M1 of the wafer D is taken up, and an image reference member-to-wafer relative position relationship information of the relative position between the wafer D and the image reference member 12 is obtained. Here, the opposing direction refers to a direction facing the image reference member 12 and the crystallizing member 11 . In the present embodiment, the surface of the image reference member 12 has a cross-shaped mark pattern; the surface of the wafer D has a specific visual appearance (indicated by a circle in the present embodiment), but the present invention is not limited thereto, and the image reference member The pattern and arrangement of the surface of 12 may also be in other marking forms, and the surface of wafer D may be other types of visual appearance.

如第3圖所示,接著透過移動單元41使置晶機構1移動到對應待置晶基板B的區域。於對位影像擷取步驟S103,對位影像擷取機構3經設置而自影像基準構件12的背向方向擷取涵蓋有影像基準構件12及待置晶基板B的一影像基準構件對基板位置關係影像M2(第4圖)。對位影像擷取機構3也可進一步包括至少一反射鏡及一影像擷取構件,利用反射鏡改變光路途徑而使設置於其他位置的影像擷取構件自影像基準構件12的背向方向擷取涵蓋有影像基準構件12及待置晶基板B的影像基準構件對基板位置關係影像。As shown in FIG. 3, the seeding mechanism 1 is then moved by the moving unit 41 to the area corresponding to the substrate B to be crystallized. In the aligning image capturing step S103, the aligning image capturing mechanism 3 is configured to capture an image reference member-to-substrate position covering the image reference member 12 and the substrate to be crystal B from the back direction of the image reference member 12 Relational image M2 (Fig. 4). The aligning image capturing mechanism 3 may further include at least one mirror and an image capturing member, and the image capturing member disposed at the other position is captured from the back direction of the image reference member 12 by using the mirror to change the optical path. The image reference member and the substrate to be crystal substrate B are covered by the image reference member and the substrate positional relationship image.

接著於計算處理步驟S104,計算處理單元42依據影像基準構件對基板位置關係影像M2以及影像基準構件對晶片相對位置關係資訊,而推算出置晶構件11吸取的晶片D之位置(在第4圖中以虛線表示)與待置晶基板B上的一待置晶部位之間的一位置校正關係資訊。在本實施例中,於計算處理步驟S104,置晶設備100更包括一標記(在第4圖中以粗十字表示),刻印於待置晶基板B的表面,計算處理單元42係依據影像基準構件對基板位置關係影像M2中的待置晶基板B的表面的標記的影像以及該影像基準構件對晶片相對位置關係資訊而推算出該位置校正關係資訊。舉例來說,這些粗十字的標記為預先設置在各個待置晶部位的周圍以標示出各個待置晶部位。然而本發明不限於此,標記可以用各種方式表示出待置晶部位,且前述的待置晶部位也不限定在基準構件對基板位置關係影像M2中。在另一個例子中,待置晶基板B的表面沒有標記,故依據影像基準構件對基板位置關係影像M2中的待置晶基板B的一視覺特徵以及影像基準構件對晶片相對位置關係資訊而推算出該位置校正關係資訊。Next, in the calculation processing step S104, the calculation processing unit 42 estimates the position of the wafer D sucked by the crystal platen member 11 based on the image reference member-to-substrate position relation image M2 and the image reference member-to-wafer relative position relationship information (in FIG. 4). A position correction relationship information between a portion to be crystallized on the substrate B to be crystallized is indicated by a broken line. In the present embodiment, in the calculation processing step S104, the crystallizing apparatus 100 further includes a mark (indicated by a thick cross in FIG. 4), which is imprinted on the surface of the substrate B to be crystallized, and the calculation processing unit 42 is based on the image reference. The position-correction relationship information is derived from the image of the mark on the surface of the substrate to be crystal substrate B in the substrate positional relationship image M2 and the relative positional relationship information of the image reference member to the wafer. For example, the marks of these thick crosses are pre-arranged around each of the portions to be crystallized to indicate the respective portions to be crystallized. However, the present invention is not limited thereto, and the mark may represent the portion to be crystallized in various manners, and the aforementioned portion to be crystallized is not limited to the reference member to substrate positional relationship image M2. In another example, the surface of the substrate B to be crystallized is not marked, so that a visual feature of the substrate substrate B in the substrate positional relationship image M2 and a relative positional relationship between the image reference member and the wafer are calculated according to the image reference member. The position correction relationship information is output.

再於校正調整步驟S105,校正調整單元43依據該位置校正關係資訊而校正調整置晶構件11與待置晶部位之間的相對位置,使置晶構件11吸取的晶片D之位置為對準待置晶部位。例如,藉由校正調整置晶構件11與待置晶部位之間的相對位置,使吸取的晶片D的外緣可對齊粗十字的外緣(待置晶部位)。在本實施例中,校正調整單元43依據該位置校正關係資訊,控制移動單元41細微調整置晶構件11的位置,使置晶構件11吸取的晶片D之位置為對準待置晶部位。如第3圖所示,置晶設備100也可進一步包括一承載待置晶基板B的移動載台5,訊號連接校正調整單元43。校正調整單元43依據該位置校正關係資訊,細微調整移動載台5以使置晶構件11吸取的晶片D之位置為對準待置晶基板B的待置晶部位。In the correction adjustment step S105, the correction adjustment unit 43 corrects the relative position between the crystallizing member 11 and the portion to be crystallized according to the position correction relationship information, so that the position of the wafer D sucked by the crystal member 11 is aligned. Crystallization site. For example, by correcting the relative position between the crystallizing member 11 and the portion to be crystallized, the outer edge of the sucked wafer D can be aligned with the outer edge of the thick cross (the portion to be crystallized). In the present embodiment, the correction adjustment unit 43 controls the movement unit 41 to finely adjust the position of the crystallizing member 11 according to the position correction relationship information, so that the position of the wafer D sucked by the crystallizing member 11 is aligned with the portion to be crystallized. As shown in FIG. 3, the crystal device 100 may further include a moving stage 5 carrying the substrate B to be crystallized, and a signal connection correction adjusting unit 43. The correction adjusting unit 43 finely adjusts the moving stage 5 according to the position correction relationship information so that the position of the wafer D sucked by the crystal pulling member 11 is aligned with the portion to be crystallized of the substrate B to be crystallized.

最後於置晶步驟S106,使置晶構件11執行置晶。Finally, in the seeding step S106, the crystallizing member 11 is subjected to seeding.

綜上所述,本發明的置晶方法及置晶設備,相對先前技術,可大幅提高置晶(待置晶基板B有標記)或排列(待置晶基板B無標記)的精度以及準度。In summary, the crystallizing method and the crystal arranging device of the present invention can greatly improve the precision and accuracy of the crystallization (the substrate B to be marked) or the alignment (the substrate B to be unmarked) without the marking of the prior art. .

以上之敘述以及說明僅為本發明之較佳實施例之說明,對於此項技術具有通常知識者當可依據以下所界定申請專利範圍以及上述之說明而作其他之修改,惟此些修改仍應是為本發明之發明精神而在本發明之權利範圍中。The above description and description are only illustrative of the preferred embodiments of the present invention, and those of ordinary skill in the art can make other modifications in accordance with the scope of the invention as defined below and the description above, but such modifications should still be It is within the scope of the invention to the invention of the invention.

100‧‧‧置晶設備100‧‧ ‧ crystallizing equipment

1‧‧‧置晶機構1‧‧ ‧ crystallizing mechanism

11‧‧‧置晶構件11‧‧‧ Crystallized components

12‧‧‧影像基準構件12‧‧‧Image reference components

2‧‧‧基準影像擷取機構2‧‧‧ benchmark image capture mechanism

3‧‧‧對位影像擷取機構3‧‧‧ Alignment image capture mechanism

4‧‧‧控制系統4‧‧‧Control system

41‧‧‧移動單元41‧‧‧Mobile unit

42‧‧‧計算處理單元42‧‧‧Calculation Processing Unit

43‧‧‧校正調整單元43‧‧‧Correction adjustment unit

5‧‧‧移動載台5‧‧‧Mobile stage

B‧‧‧待置晶基板B‧‧‧The substrate to be crystallized

D‧‧‧晶片D‧‧‧ wafer

M1‧‧‧基準影像M1‧‧‧ benchmark image

M2‧‧‧影像基準構件對基板位置關係影像M2‧‧‧ image reference member to substrate positional relationship image

S101‧‧‧取晶步驟S101‧‧‧ Crystallization step

S102‧‧‧基準影像擷取步驟S102‧‧‧ benchmark image capture step

S103‧‧‧對位影像擷取步驟S103‧‧‧ alignment image capture step

S104‧‧‧計算處理步驟S104‧‧‧ Calculation processing steps

S105‧‧‧校正調整步驟S105‧‧‧correction adjustment steps

S106‧‧‧置晶步驟 S106‧‧‧ Crystallization step

第1圖為顯示根據本發明一實施例的影像輔助的置晶方法之流程圖。 第2圖為顯示根據本發明的實施例的基準影像之示意圖。 第3圖為顯示根據本發明的實施例的置晶設備之示意圖。 第4圖為顯示根據本發明的實施例的影像基準構件對基板位置關係影像之示意圖。1 is a flow chart showing an image assisted crystallizing method in accordance with an embodiment of the present invention. Figure 2 is a schematic diagram showing a reference image in accordance with an embodiment of the present invention. Figure 3 is a schematic diagram showing a crystallizing apparatus in accordance with an embodiment of the present invention. Fig. 4 is a view showing an image reference member versus substrate positional relationship image according to an embodiment of the present invention.

Claims (7)

一種影像輔助的置晶方法,用於移動一置晶設備的一置晶構件至一待置晶基板的一待置晶部位,該置晶設備包括一置晶機構、一基準影像擷取機構及一對位影像擷取機構,該置晶機構包括該置晶構件及一設置於該置晶構件外圍的影像基準構件,該置晶方法包含: 一取晶步驟,利用該置晶構件吸取一晶片; 一基準影像擷取步驟,利用該基準影像擷取機構自該影像基準構件的對向方向擷取涵蓋有該影像基準構件以及該置晶構件吸取的該晶片的一基準影像,而得到該晶片與該影像基準構件之間的相對位置的一影像基準構件對晶片相對位置關係資訊; 一對位影像擷取步驟,利用該對位影像擷取機構自該影像基準構件的背向方向擷取涵蓋有該影像基準構件及一待置晶基板的一影像基準構件對基板位置關係影像; 一計算處理步驟,依據該影像基準構件對基板位置關係影像以及該影像基準構件對晶片相對位置關係資訊,而推算出該置晶構件吸取的該晶片位置與該待置晶基板上的一待置晶部位之間的一位置校正關係資訊; 一校正調整步驟,依據該位置校正關係資訊而校正調整該置晶構件與該待置晶部位之間的相對位置,使該置晶構件吸取的該晶片之位置為對準該待置晶部位;以及 一置晶步驟,使該置晶構件執行置晶。An image-assisted crystallizing method for moving a crystallizing member of a crystallizing device to a to-be-crystallized portion of a substrate to be crystallized, the seeding device comprising a crystallizing mechanism, a reference image capturing mechanism, and a pair of image capturing mechanism, the crystallizing mechanism comprising the crystallizing member and an image reference member disposed on a periphery of the crystallizing member, the crystallizing method comprising: a crystal pulling step of drawing a wafer by using the crystal pulling member And a reference image capturing step, wherein the reference image capturing mechanism captures a reference image of the wafer that is captured by the image reference member and the crystallizing member from a direction opposite to the image reference member to obtain the wafer a relative positional relationship between the image reference member and the wafer relative to the image reference member; a pair of bit image capturing steps, using the alignment image capturing mechanism to capture from the back direction of the image reference member Having the image reference member and an image reference member of the substrate to be crystallized to the substrate positional relationship image; a calculation processing step, the substrate is based on the image reference member Position-relationship image and information about relative positional relationship of the image reference member to the wafer, and calculating a position correction relationship between the position of the wafer sucked by the crystallizing member and a portion to be crystallized on the substrate to be crystallized; Correcting the adjustment step, correcting and adjusting the relative position between the crystallizing member and the portion to be crystallized according to the position correction relationship information, so that the position of the wafer sucked by the crystallizing member is aligned with the portion to be crystallized; A seeding step causes the crystallizing member to perform crystallization. 如請求項1所述之影像輔助的置晶方法,其中該計算處理步驟係依據該影像基準構件對基板位置關係影像中的該待置晶基板的一視覺特徵以及該影像基準構件對晶片相對位置關係資訊而推算出該位置校正關係資訊。The image-assisted crystallizing method of claim 1, wherein the calculating processing step is based on a visual feature of the image-receiving substrate in the substrate position-dependent image and the relative position of the image reference member to the wafer. The relationship information is used to derive the position correction relationship information. 一種置晶設備,包含: 一置晶機構,包括一置晶構件及一設置於該置晶構件外圍的影像基準構件,該置晶構件用以吸取一晶片以及執行置晶; 一基準影像擷取機構,經設置而自該影像基準構件及該置晶構件的對向方向擷取涵蓋有該影像基準構件以及該置晶構件吸取的該晶片的一基準影像,而得到該晶片與該影像基準構件之間的相對位置的一影像基準構件對晶片相對位置關係資訊; 一對位影像擷取機構,經設置而自該影像基準構件的背向方向擷取涵蓋有該影像基準構件及一待置晶基板的一影像基準構件對基板位置關係影像; 一控制系統,包括: 一移動單元,動力連接該置晶機構; 一計算處理單元,訊號連接該基準影像擷取機構及該對位影像擷取機構,該計算處理單元經設置而依據該影像基準構件對基板位置關係影像以及該影像基準構件對晶片相對位置關係資訊,而推算出該置晶構件吸取的該晶片位置與該待置晶基板上的一待置晶部位之間的一位置校正關係資訊;以及 一校正調整單元,訊號連接該計算處理單元及該移動單元,該校正調整單元經設置而依據該位置校正關係資訊而校正調整該置晶構件與該待置晶部位之間的相對位置,使該置晶構件吸取的該晶片之位置為對準該待置晶部位。A crystal morphing apparatus comprising: a crystal morphing mechanism comprising a crystallizing member and an image reference member disposed on a periphery of the morphing member, the crystal structuring member for sucking a wafer and performing crystallization; and a reference image capture The mechanism is configured to extract a reference image of the wafer from the image reference member and the crystallizing member from the opposite direction of the image reference member and the crystal member to obtain the wafer and the image reference member Information relating to relative position of the image reference member relative to the wafer; a pair of image capturing means configured to capture the image reference member and a crystal to be crystallized from the back direction of the image reference member An image reference member-to-substrate positional relationship image of the substrate; a control system comprising: a mobile unit electrically connected to the crystallizing mechanism; a computing processing unit, the signal connecting the reference image capturing mechanism and the alignment image capturing mechanism The calculation processing unit is configured to be based on the image reference member to the substrate positional relationship image and the image reference member to the wafer phase Positional relationship information, and calculating a position correction relationship information between the position of the wafer sucked by the crystallizing member and a portion to be crystallized on the substrate to be crystallized; and a correction adjusting unit, the signal is connected to the calculation processing unit And the moving unit, the correction adjusting unit is configured to correct and adjust the relative position between the crystallizing member and the to-be-crystallized portion according to the position correction relationship information, so that the position of the wafer sucked by the crystallizing member is The site to be crystallized. 如請求項3所述之置晶設備,其中該影像基準構件為一光罩或具有影像特徵符號之透光構件。The crystallizing device of claim 3, wherein the image reference member is a reticle or a light transmissive member having an image feature symbol. 如請求項3所述之置晶設備,其中該校正調整單元依據該位置校正關係資訊,控制該移動單元細微調整該置晶構件,使該置晶構件吸取的該晶片之位置為對準該待置晶部位。The crystallizing device of claim 3, wherein the correction adjusting unit controls the moving unit to finely adjust the crystallizing member according to the position correction relationship information, so that the position of the wafer sucked by the crystallizing member is aligned with the Crystallization site. 如請求項3所述之置晶設備,更包括一承載該待置晶基板的移動載台,該移動載台訊號連接該校正調整單元,該校正調整單元依據該位置校正關係資訊,細微調整該移動載台以使該置晶構件吸取的該晶片之位置為對準該待置晶部位。The crystallizing device of claim 3, further comprising a moving stage carrying the substrate to be crystallized, wherein the moving stage signal is connected to the correction adjusting unit, and the correction adjusting unit finely adjusts the relationship according to the position correction relationship information The stage is moved such that the position of the wafer sucked by the crystallizing member is aligned with the portion to be crystallized. 如請求項3所述之置晶設備,更包括一標記,刻印於該待置晶基板,該計算處理單元係依據該影像基準構件對基板位置關係影像中的該待置晶基板的該標記的影像以及該影像基準構件對晶片相對位置關係資訊而推算出該位置校正關係資訊。The crystallizing device of claim 3, further comprising a mark imprinted on the substrate to be crystallized, wherein the calculation processing unit is based on the mark of the substrate to be crystallized in the substrate positional relationship image according to the image reference member The position correction relationship information is derived from the image and the relative positional relationship information of the image reference member to the wafer.
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