TW201904760A - Solid state camera - Google Patents

Abstract

This solid-state image pickup device includes a first near-infrared cut filter, and a solid-state image pickup element. The first near-infrared cut filter includes glass substrates, and a dielectric multi-layer film which is disposed on at least one of the glass substrates. The solid-state image pickup element includes: a semiconductor substrate; a first light-receiving element disposed on the semiconductor substrate; and an optical filter disposed on the first light-receiving element. The optical filter includes: a color filter layer disposed on the first light receiving element; and a second near-infrared cut filter disposed on the color filter layer. The first near-infrared cut filter is disposed at a position facing the second near-infrared cut filter. The number of layers provided in the dielectric multi-layer film is at least 10 but less than 40.

Description

Solid-state imaging device

The invention relates to a solid-state imaging device.

A semiconductor solid-state imaging element such as a Charge Coupled Device (CCD) image sensor or a Complementary Metal Oxide Semiconductor (CMOS) image sensor is mounted in an imaging device such as a digital camera. The sensitivity of these solid-state imaging elements extends from the visible region to the infrared region. Therefore, in the imaging device, an infrared cut-off filter for blocking infrared rays is provided between the imaging lens and the solid-state imaging element. With this infrared cutoff filter, the sensitivity of the solid-state imaging element can be corrected in a manner close to the visual acuity of human beings.

For example, Patent Document 1 discloses an infrared cut filter formed by providing a dielectric multilayer film on a glass substrate. In addition, a configuration is disclosed in which a coating layer is provided on a glass substrate and a dielectric multilayer film is provided on the coating layer. [Prior Art Literature] [Patent Literature]

[Patent Document 1] International Publication No. 2014/030628

[Problems to be Solved by the Invention]

In the solid-state imaging device described in Patent Document 1, a dielectric multilayer film of a near-infrared cut filter is alternately laminated with a dielectric film having a high refractive index and a dielectric film having a low refractive index. However, if the number of layers of the film used in the near-infrared cut filter increases, the warpage generated in the entire near-infrared cut filter becomes large. In addition, the number of manufacturing steps is increased, so the manufacturing cost is increased, and the yield is decreased.

Therefore, one object of the present invention is to provide a high-quality solid-state imaging device with good yield. [Means for solving problems]

A solid-state imaging device according to an embodiment of the present invention includes a first near-infrared cut filter and a solid-state imaging element. The first near-infrared cut filter includes a dielectric multilayer film on at least one of a glass substrate and a glass substrate. The solid-state imaging element includes a semiconductor substrate, a first light receiving element provided on the semiconductor substrate, and an optical filter provided on the first light receiving element. The optical filter includes a color filter layer provided on the first light receiving element. And a second near-infrared cut-off filter provided on the color filter, the first near-infrared cut-off filter is provided at a position opposite to the second near-infrared cut-off filter, and the number of stacked layers of the dielectric multilayer film is 10 or more And less than 40 layers to set.

In the above configuration, the glass substrate is CuO-containing fluorophosphate glass or CuO-containing phosphate glass.

In the above configuration, the optical filter further includes a first cured film on the second near-infrared cut filter.

In the above configuration, the optical filter further includes a second cured film between the color filter layer and the second near-infrared cut filter.

The configuration further includes a second light receiving element provided on the semiconductor substrate, and a pass filter layer overlapping the second light receiving element.

In the above-mentioned configuration, the number of laminated layers of the dielectric multilayer film is set to be 20 or more and 30 or less.

In the above configuration, the second near-infrared cut filter includes a tungsten cesium oxide compound, and a compound selected from the group consisting of a diiminium-based compound, a squarylium-based compound, a cyanine-based compound, a phthalocyanine-based compound, and naphthalene At least one organic pigment of an organic pigment compound of a cyanine compound, a quaterrylene compound, an ammonium compound, an imine compound, a pyrrolopyrrole compound, or a ketonium compound.

A solid-state imaging device according to an embodiment of the present invention includes a first near-infrared cut filter and a solid-state imaging element. The first near-infrared cut filter includes a base material and a first dielectric multilayer film provided on a first surface of the base material. A resin layer provided on the second surface of the substrate, and a second dielectric multilayer film provided on the second surface of the substrate via the resin layer; the solid-state imaging element includes a semiconductor substrate; and a first light provided on the semiconductor substrate. A receiving element and an optical filter provided on the first light receiving element, the optical filter having a color filter layer provided on the first light receiving element and a second near-infrared cut filter provided on the color filter layer The resin layer of the first near-infrared cut-off filter is provided at a position facing the second near-infrared cut-off filter, and the number of laminated layers of the first dielectric multilayer film is provided by 10 or more and less than 40 layers.

In the above configuration, the optical filter further includes a first cured film on the first near-infrared cut filter.

In the above configuration, the optical filter further includes a second cured film between the color filter layer and the first near-infrared cut filter.

The configuration further includes a second light receiving element provided on the semiconductor substrate, and a filter layer overlapping the second light receiving element.

In the above-mentioned configuration, the number of laminated layers of the first dielectric multilayer film is set to 20 or more and 30 or less.

In the above configuration, the second near-infrared cut filter includes a tungsten cesium oxide compound, and a compound selected from the group consisting of a diimide-based compound, a squarium ylide, a cyanine-based compound, a phthalocyanine-based compound, and a naphthalocyanine-based compound At least one of organic pigments of benzobisfluorene-based compounds, ammonium-based compounds, imine-based compounds, pyrrolopyrrole-based compounds, and ketonium-based compounds.

A solid-state imaging device according to an embodiment of the present invention includes a first near-infrared cut filter and a solid-state imaging element. The first near-infrared cut filter includes a resin substrate including a near-infrared absorber and at least one of the resin substrate A dielectric multilayer film on the substrate, the solid-state imaging element includes a semiconductor substrate, a first light receiving element provided on the semiconductor substrate, and an optical filter provided on the first light receiving element. The optical filter has a first light receiving element. A color filter layer on the element and a second near-infrared cut-off filter provided on the color filter layer. The first near-infrared cut-off filter is provided at a position facing the second near-infrared cut-off filter, and the dielectric volume layer The number of layers of the film is set to be 10 or more and less than 40. By using it in combination with the second near-infrared cut filter, the incident angle dependency can be reduced.

In the above configuration, the optical filter further includes a first cured film on the first near-infrared cut filter.

In the above configuration, the optical filter further includes a second cured film between the color filter layer and the first near-infrared cut filter.

The configuration further includes a second light receiving element provided on the semiconductor substrate, and a filter layer overlapping the second light receiving element.

In the above-mentioned configuration, the number of laminated layers of the dielectric multilayer film is set to be 20 or more and 30 or less.

In the above configuration, the second near-infrared cut filter includes a tungsten cesium oxide compound, and a compound selected from the group consisting of a diimide-based compound, a squarium ylide compound, a cyanine-based compound, a phthalocyanine-based compound, and a naphthalocyanine-based compound. At least one of organic pigments of benzobisfluorene-based compounds, ammonium-based compounds, imine-based compounds, pyrrolopyrrole-based compounds, and ketonium-based compounds. [Effect of the invention]

According to the present invention, it is possible to reduce the incidence angle dependency and provide a high-quality solid-state imaging device with good yield.

First Embodiment A cross-sectional view of a solid-state imaging device according to this embodiment is shown in FIG. 1. As shown in FIG. 1, the solid-state imaging device 210 includes a solid-state imaging element 110 and a near-infrared cut-off filter 130.

[Configuration of solid-state imaging device] First, the configuration of the solid-state imaging device 110 will be described. The solid-state imaging element 110 includes a semiconductor substrate 111 including a light-receiving portion that photoelectrically converts incident light, and an optical filter layer 114 provided on the semiconductor substrate 111.

A pixel portion 101 is provided on the semiconductor substrate 111. In the pixel unit 101, a plurality of pixels are arranged in a column direction and a row direction. FIG. 1 is a cross-sectional view of a plurality of pixels in a column direction.

As shown in FIG. 1, the pixel unit 101 includes a pixel 102 for visible light detection and a pixel 103 for infrared light detection. The visible light detection pixel 102 has a first pixel 104a to a first pixel 104c, and the infrared light detection pixel 103 has a second pixel 105. The pixel unit 101 has a semiconductor layer 112, a wiring layer 113, an optical filter layer 114, and a microlens array 115 stacked on a semiconductor substrate 111.

As the semiconductor substrate 111, for example, a silicon substrate or a substrate (Silicon-On-Insulator (SOI) substrate) provided with a silicon layer on an insulating layer can be used. The semiconductor layer 112 is provided in a semiconductor region of the semiconductor substrate 111. For example, when the semiconductor substrate 111 is a silicon substrate, a semiconductor layer 112 is included on the silicon substrate. Photodiodes 106a to 106d are provided in the semiconductor layer 112 corresponding to each pixel.

In this specification and the like, the photodiodes 106a to 106c are also referred to as a first light-receiving element, and the photodiode 106d is also referred to as a second light-receiving element. In addition, the first light receiving element and the second light receiving element are not limited to the photodiode, and may be other elements as long as they have a function of generating a current or a voltage by a photovoltaic effect. Substitute. In addition, a circuit in the semiconductor layer 112 for acquiring a detection signal from each of the plurality of photodiodes 106a to 106d is formed using an active element such as a transistor.

The wiring layer 113 is a layer including wirings such as address lines and signal lines provided in the pixel portion 101. The plurality of wirings in the wiring layer 113 are separated by an interlayer insulating film, and may be multilayered. For example, since the address line and the signal line extend and intersect in the column direction and the row direction, they can be provided as different layers sandwiching the insulating layer.

The optical filter layer 114 is composed of a plurality of layers having different optical characteristics. In this embodiment, a color filter layer 107a to a color filter layer 107c having a transmission band of a visible light wavelength region is provided on the wiring layer 113 in a region overlapping the photodiodes 106a to 106c. An infrared filter layer 108 is provided in a region overlapping the photodiode 106d.

A near-infrared cut-off filter 122 that blocks light in a near-infrared wavelength region and transmits light in a visible-ray wavelength region is provided in a region overlapping the color filter layers 107a to 107c. In other words, the near-infrared cut-off filter 122 is provided on the color filter layer 107 a to the color filter layer 107 c, and is not provided on the infrared filter layer 108. That is, the near-infrared cut filter 122 has an opening in a region where the photodiode 106d is provided.

As shown in FIG. 1, a cured film 121 is provided between the color filter layer 107 a to the color filter layer 107 c and the infrared filter layer 108 and the near-infrared cut filter 122. By providing the cured film 121, the unevenness of the surfaces of the color filter layer 107a to the color filter layer 107c and the infrared filter layer 108 can be reduced, and the near-infrared cut-off filter 122 can be provided on a flat surface. This makes it possible to reduce the thickness of the near-infrared cut filter 122.

A hardened film 123 is further provided on the upper surface of the near-infrared cut filter 122. The near-infrared cut filter 122 is provided on the light receiving surfaces of the photodiodes 106a to 106c, and is not provided on the light receiving surfaces of the photodiodes 106d. Therefore, a step portion caused by the near-infrared cut filter 122 is formed. However, by providing the cured film 123, the stepped portion can be buried, and the base surface of the microlens array 115 can be made flat.

The microlens array 115 is provided on the upper surface of the optical filter layer 114. The position of each microlens of the microlens array 115 corresponds to the position of each pixel, and the incident light collected by each microlens is received by each corresponding pixel (specifically, each photodiode). Since the microlens array 115 can be formed using a resin material, it can be formed on-chip. For example, the resin material applied on the cured film 123 can be processed to form the microlens array 115.

[Near-Infrared Cut-Off Filter] Next, a configuration of the near-infrared cut-off filter 130 will be described. The near-infrared cut filter 130 includes a base material 131, a dielectric multilayer film 132, and a dielectric multilayer film 133. The near-infrared cut filter 130 is provided at a position facing the near-infrared cut filter 122.

<< Substrate >> As the substrate 131, a glass substrate or a resin substrate can be used. As a glass substrate, a quartz glass substrate, a borosilicate glass substrate, a soda glass substrate, etc. can be used, for example. In addition, near-infrared absorbing glass containing CuO-containing fluorophosphate glass or CuO-containing phosphate glass can be used. By using CuO-containing glass as the base material 131, it is preferable to have high transmittance to visible light and high shielding properties to near-infrared rays.

The thickness of the glass substrate is preferably 30 μm or more and 1000 μm or less, more preferably 50 μm or more and 750 μm or less, and particularly preferably 50 μm or more and 700 μm or less. In the case where the thickness of the glass substrate is thinner than 30 μm, the glass substrate itself is likely to be broken, and therefore, the operation may be extremely difficult. In addition, when the glass substrate is thicker than 1000 μm, the purpose of reducing the thickness of the near-infrared cut filter may not be achieved.

If the thickness of the glass substrate is within the above range, the near-infrared cut filter can be miniaturized and lightened, and can be suitably used for various applications such as solid-state imaging devices. Especially when it is used for a lens unit such as a camera module, the lens unit can be reduced in height.

<< Dielectric Multilayer Film >> The dielectric multilayer film is a film having a function of reflecting near-infrared rays. The dielectric multilayer film may be provided on one side of the substrate 131 or on both sides. When it is provided on one side, it is excellent in manufacturing cost or ease of production, and when it is provided on both sides, a near-infrared cut-off filter having high strength and less warping can be obtained.

In FIG. 1, a case where a dielectric multilayer film 132 and a dielectric multilayer film 133 are provided on both sides of a substrate 131 will be described. In the base material 131, a side facing the light-receiving surface of the solid-state imaging element 110 will be described as a first surface, and a side opposite to the first surface will be described as a second surface.

As the dielectric multilayer film, for example, ceramics can be used. In order to form a near-infrared cut-off filter using the interference effect of light, it is preferable to use two or more ceramics having different refractive indexes.

In addition, it is preferable to use a noble metal film having absorption in the near-infrared region in consideration of thickness and number of layers so as not to affect the transmittance of the near-infrared cut filter. The dielectric multilayer film preferably has a structure in which high-refractive-index material layers and low-refractive-index material layers are alternately laminated.

As a material constituting the high refractive index material layer, a material having a refractive index of 1.7 or more can be used, and a material having a refractive index ranging from 1.7 to 2.5 can be selected. Examples of the material include titanium oxide, zirconia, tantalum pentoxide, niobium pentoxide, lanthanum oxide, yttrium oxide, zinc oxide, zinc sulfide, or indium oxide as a main component, and a small amount of titanium oxide, Tin oxide and / or cerium oxide.

As a material constituting the low refractive index material layer, a material having a refractive index of 1.6 or less can be used, and a material having a refractive index in a range of 1.2 to 1.6 is selected. Examples of the material include silicon dioxide, aluminum oxide, lanthanum fluoride, magnesium fluoride, and sodium aluminum hexafluoride.

Examples of a method for forming a dielectric multilayer film on the substrate 131 include a method in which a high refractive index material layer and a low refractive index material layer are alternately laminated by a CVD method, a sputtering method, a vacuum evaporation method, or the like. A method of bonding a dielectric multilayer film to the substrate 131 by using an adhesive, or by directly forming the high refractive index material layer and the low refractive index material by CVD, sputtering, or vacuum evaporation method A method of a dielectric multilayer film in which refractive index material layers are alternately laminated.

The thickness of each of the high-refractive-index material layer and the low-refractive-index material layer is a thickness of 0.1 λ to 0.5 λ of a near-infrared wavelength λ (nm) to be blocked. When the thickness is outside the above range, the product (n × d) of the refractive index (n) and the film thickness (d) is significantly different from the optical film thickness calculated from λ / 4. As a result, the relationship between the optical characteristics of reflection and refraction collapses, and it is difficult to control the blocking and transmission of a specific wavelength.

The number of laminated layers of the dielectric multilayer film 133 provided on the first surface side of the substrate 131 is preferably smaller than the number of laminated layers of the dielectric multilayer film 132 provided on the second surface side. The number of laminated layers of the dielectric multilayer film 133 provided on the first surface side of the base material 131 is 10 or less, and preferably 7 or less. The number of laminates of the dielectric multilayer film 132 provided on the second surface side of the base material 131 is preferably 10 or more and less than 40, more preferably 20 or more and less than 40, and particularly preferably 20 or more And 30 floors or less.

When the dielectric multilayer film 132 or the dielectric multilayer film 133 is vapor-deposited, in the case where the substrate 131 is warped, in order to eliminate the situation, the dielectric multilayer film may be vapor-deposited on both sides of the substrate 131, The surface of the vapor-deposited dielectric multilayer film of the substrate 131 may be irradiated with radiation such as ultraviolet rays. When the radiation is irradiated, the dielectric multilayer film 132 or the dielectric multilayer film 133 may be irradiated while being deposited, or may be irradiated separately after the vapor deposition.

In FIG. 1, the dielectric multilayer film 133 provided on the first surface side of the base material 131 is preferably, for example, 7 layers or less. The dielectric multilayer film 132 provided on the second surface side of the base material 131 is preferably, for example, 20 layers or more and 30 layers or less. By setting the near-infrared cut-off filter 130 to such a configuration, warping of the entire near-infrared cut-off filter 130 can be reduced. When a resin base material is used as the base material 131, warpage of the resin base material can be reduced, which is preferable. In addition, since the number of layers of the dielectric multilayer film 132 and the number of layers of the dielectric multilayer film 133 can be reduced, manufacturing steps can be reduced and the yield can be improved.

Although FIG. 1 illustrates the case where the dielectric multilayer film 132 and the dielectric multilayer film 133 are provided on both sides of the substrate 131, an embodiment of the present invention is not limited to this. When the substrate 131 has sufficient rigidity, a configuration in which the dielectric multilayer film 133 is not provided on the first surface of the substrate 131 and the dielectric multilayer film 132 is provided on the second surface may be employed. The structure in which the near-infrared cut-off filter 130 is provided with the dielectric multilayer film 133 only on one side of the substrate 131 can reduce the number of layers of the entire dielectric multilayer film, so that the manufacturing steps can be further reduced, and the quality can be improved. rate.

[Operation of Solid-State Imaging Device] In the solid-state imaging device 210 shown in FIG. 1, light is incident through the near-infrared cut-off filter 130, and thereby the near-infrared is cut off. Next, the light incident through the microlens array 115 is further cut off by the near-infrared cut-off filter 122, and the visible light is incident on the color filter layer 107a to the color filter layer 107c. On the other hand, the pixels 103 for infrared light detection are directly incident on the infrared filter layer 108.

In the first pixel 104a to the first pixel 104c, the visible light transmitted through the color filter layer 107a to the color filter layer 107c in the wavelength range of visible rays is incident on the photoelectric according to the respective optical characteristics. Diodes 106a to 106d. This makes it possible to detect visible light with high accuracy without being affected by noise caused by near-infrared rays. In the second pixel 105, the infrared filter layer 108 cuts off the light in the visible wavelength region, and the light in the infrared wavelength region (particularly in the near infrared wavelength region) is incident on the photodiode 106d. This makes it possible to detect near infrared rays with high accuracy without being affected by noise or the like caused by visible light.

The solid-state imaging device 210 of this embodiment is provided with a near-infrared cut-off filter 122 on the solid-state imaging element 110, and further includes a near-infrared cut-off filter 130 on the near-infrared cut-off filter 122. Even with a near-infrared cut-off filter provided on the solid-state imaging element 110, the near-infrared can be cut off. Thereby, the number of layers of the dielectric multilayer film 132 and the dielectric multilayer film 133 can be reduced. By reducing the number of layers of the dielectric multilayer film 132 and the dielectric multilayer film 133, the warpage of the near-infrared cut filter 130 can be reduced. In addition, since the number of layers of the dielectric multilayer film 132 and the dielectric multilayer film 133 can be reduced, manufacturing steps can be reduced and the yield can be improved.

Next, each layer provided in the optical filter layer 114 will be described in detail.

<< Color Filter Layer >> Each of the color filter layers 107a to 107c is a filter that transmits visible light in different wavelength ranges. For example, the color filter layer 107a may be formed by a filter that transmits light in a wavelength range of red light (approximately 610 nm to 780 nm), and the color filter layer 107b may be formed by transmitting green light (approximately 500 nm). The color filter layer 107c can be configured by a filter that transmits light in a wavelength range of blue light (approximately 430 nm to 460 nm). The transmitted light of the color filter layer 107 a to the color filter layer 107 c is incident on each of the plurality of photodiodes.

The color filter layer 107a to the color filter layer 107c can be formed by a resin material such as an adhesive resin and a hardener containing a composition having a pigment (pigment or dye) having absorption in a specific wavelength range. These pigments can be used singly or in combination.

If the photodiode is a silicon photodiode, it has sensitivity over a wide range from the visible light wavelength region to the infrared wavelength region. Therefore, by providing the color filter layer 107 a to the color filter layer 107 c corresponding to the photodiodes, it is possible to provide a plurality of pixels corresponding to various colors.

<< Infrared Filter Layer >> The infrared filter layer 108 is a filter that transmits light at least in the near-infrared wavelength region. The infrared filter layer 108 may be formed by adding a pigment (pigment or dye) having an absorption in a wavelength range of visible light to an adhesive resin, a polymerizable compound, or the like. The infrared filter layer 108 has the following spectral transmission characteristics: it absorbs (cuts off) light that is less than 700 nm, preferably less than 750 nm, more preferably less than 800 nm, and transmits light with a wavelength of 700 nm or more, preferably Light of 750 nm or more, more preferably 800 nm or more.

The infrared filter layer 108 blocks near-infrared light having a predetermined wavelength (for example, less than 750 nm) and transmits near-infrared rays in a predetermined wavelength range (for example, 750 nm to 950 nm). It is incident on the photodiode 106d. Thereby, the photodiode 106d can detect near infrared rays with high accuracy without being affected by noise or the like caused by visible light. As described above, by providing the infrared filter layer 108, the second pixel 105 can be used as the infrared detection pixel 103. The infrared filter layer 108 can be formed using the photosensitive composition described in Japanese Patent Application Laid-Open No. 2014-130332, for example.

<< Near-Infrared Cut-Off Filter >> The near-infrared cut-off filter 122 is a filter that transmits light in a wavelength region of visible rays and blocks light in a near-infrared wavelength region. The near-infrared cut-off filter 122 preferably contains a compound (hereinafter, also referred to as an "infrared absorber") having a maximum absorption wavelength in a range of wavelengths from 600 nm to 2000 nm. An infrared absorbing composition of at least one of a binder resin and a polymerizable compound.

<Infrared absorbing agent> As the infrared absorbing agent, for example, a compound selected from the group consisting of a diimide-based compound, a squarium ylide salt-based compound, a cyanine-based compound, a phthalocyanine-based compound, a naphthalocyanine-based compound, and a benzobifluorene-based compound can be used. Compounds, ammonium compounds, imine compounds, azo compounds, anthraquinone compounds, porphyrin compounds, pyrrolopyrrole compounds, oxacyanine compounds, ketonium compounds, hexavalent porphyrin compounds At least one compound selected from the group consisting of metal dithiol compounds, copper compounds, tungsten compounds, and metal borides. These can be used alone or in combination of two or more.

The following exemplifies compounds that can be used as infrared absorbers.

Specific examples of the diimine (diammonium) -based compound include, for example, International Publication No. 2007/148595, Japanese Patent Laid-Open Publication No. 2011-038007, and paragraph [0118] of International Publication No. 2011/118171. The compounds described. Examples of commercially available products include: EPOLIGHT series such as EPOLIGHT 1178 (made by Epolin), CIR-108X series such as CIR-1085, and CIR-96X series (Japan (Carlit), IRG022, IRG023, PDC-220 (manufactured by Nippon Kayaku Co., Ltd.), etc.

Specific examples of the squarylium salt compound include compounds described in paragraph [0178] of Japanese Patent Laid-Open No. 1-228960, Japanese Patent Laid-Open No. 2012-215806, and the like.

Specific examples of the cyanine-based compound include paragraphs [0160] of Japanese Patent Laid-Open No. 2012-215806, paragraphs [0047] to [0049] of Japanese Patent Laid-Open No. 2013-155353, and the like. Compound. Examples of commercially available products include Daito chmix 1371F (made by Daito Chemix), NK series such as NK-3212 and NK-5060 (made by Hayashibara Biochemical Research Institute) )Wait.

Specific examples of the phthalocyanine compound include, for example, Japanese Patent Laid-Open No. 2004-18561, Japanese Patent Laid-Open No. 2005-220060, Japanese Patent Laid-Open No. 2007-169343, and Japanese Patent Laid-Open No. 2013-195480. Compounds and the like described in paragraphs [0026] to [0027] and the like of the publication. Examples of commercially available products include FB series such as FB-22 and 24 (manufactured by Yamada Chemical Industry Co., Ltd.), Excolor series, Excolor TX-EX 720, and Eskoura (Excolor) 708K (manufactured by Japan Catalyst), Lumogen IR788 (manufactured by BASF), ABS643, ABS654, ABS667, ABS670T, IRA693N, IRA735 (manufactured by Exciton), etc.

Specific examples of the naphthalocyanine-based compound include compounds described in paragraphs [0046] to [0049] of Japanese Patent Laid-Open No. 2009-215542.

The copper compound is preferably a copper complex, and specific examples include compounds described in Japanese Patent Laid-Open No. 2014-139616, Japanese Patent Laid-Open No. 2014-139617, and the like.

The tungsten compound is preferably a tungsten oxide compound, more preferably tungsten cesium oxide, tungsten rhenium oxide, and even more preferably tungsten cesium oxide. Examples of the composition formula of tungsten cesium oxide include Cs _0.33 WO ₃ , and examples of the composition formula of tungsten rhenium oxide include Rb _0.33 WO ₃ and the like. The tungsten oxide-based compound can also be obtained, for example, as a dispersion of tungsten fine particles such as YMF-02A manufactured by Sumitomo Metal Mining Co., Ltd.

Specific examples of the metal boride include compounds described in paragraph [0049] and the like of Japanese Patent Laid-Open No. 2012-068418. Among them, lanthanum boride is preferred.

When the infrared absorbent is soluble in an organic solvent to be described later, the infrared absorbent may be subjected to lake formation and used as an infrared absorbent that is insoluble in the organic solvent. A known method can be used for the method of lake formation. For example, refer to Japanese Patent Laid-Open No. 2007-271745.

In such an infrared absorbing agent, it is preferable to include a compound selected from the group consisting of a diimine-based compound, a quatronium salt-based compound, a cyanine-based compound, a phthalocyanine-based compound, a naphthalocyanine-based compound, and a benzobifluorene-based compound At least one of the group consisting of organic pigment compounds such as ammonium compounds, imine compounds, pyrrolopyrrole compounds, ketonium compounds, metal dithiol compounds, and inorganic compounds such as copper compounds and tungsten compounds. One. Among these, in particular, a tungsten cesium oxide compound is used in combination with a compound selected from the group consisting of a diimide-based compound, a squarium ylide compound, a cyanine-based compound, a phthalocyanine-based compound, a naphthalophthalocyanine-based compound, and benzodifluorene. At least one of organic pigments among organic compounds, organic compounds, ammonium compounds, imine compounds, pyrrolopyrrole compounds, and ketonium compounds exhibits high blocking properties in a high infrared absorption region. This aspect is preferred.

With this embodiment, infrared rays incident on the light receiving element can be blocked more efficiently.

In addition, if the type and content ratio of the infrared absorber in the near-infrared cut-off filter 122 are fixed, as the film thickness increases, the infrared absorption characteristics can be improved. Thereby, the solid-state imaging device can obtain a higher S / N ratio and can perform high-sensitivity imaging. However, if the film thickness of the near-infrared cut filter 122 is increased, there is a problem that the thickness of the solid-state imaging device 230 cannot be reduced. In order to reduce the thickness of the near-infrared cut filter 122 in order to reduce the thickness of the solid-state imaging device, there is a problem that the infrared blocking ability is reduced and the pixels for visible light detection are easily affected by noise caused by infrared rays.

On the other hand, if the content ratio of the infrared absorber is increased, for example, the proportion of the polymerizable compound as one of the other components forming the near-infrared cut filter decreases, and the hardness of the near-infrared cut filter 122 decreases. As a result, the optical filter layer 114 becomes brittle, the layer in contact with the near-infrared cut filter 122 is peeled off, or cracks occur. For example, there is a problem that the adhesiveness between the cured film 121 and the cured film 123 that are in contact with the near-infrared cut filter 122 is reduced, and it is easy to peel off.

In the near-infrared cut filter 122, the ratio of the infrared absorber selected from the above is preferably a ratio of 0.1% to 80% by mass, more preferably 1% to 70% by mass, and even more preferably 3% by mass. % To 60% by mass is preferable.

When a near-infrared cut-off filter is manufactured using an infrared-absorbing composition, a preferable content ratio of the infrared absorbent to the total solid content mass of the infrared-absorbing composition is similar to that of the near-infrared cut-off filter. The ratio of the infrared absorber in 122 is the same. The solid content in this case is a component other than the solvent constituting the infrared absorbing composition.

Hereinafter, other components constituting the infrared absorbing composition that can be preferably used for producing the near-infrared cut filter 122 of the present invention will be described.

<Binder resin> The infrared-absorbing composition is preferably a binder resin. The binder resin is not particularly limited, but is preferably selected from the group consisting of an acrylic resin, a polyimide resin, a polyimide resin, a polyurethane resin, an epoxy resin, and a polysiloxane. At least one.

First, an acrylic resin will be described. Among acrylic resins, acrylic resins having acidic functional groups such as a carboxyl group and a phenolic hydroxyl group are preferred. By using an acrylic resin having an acidic functional group, in the case where the near-infrared cut filter obtained from the infrared absorbing composition is formed into a predetermined pattern and exposed, an alkaline developer can be used to more reliably remove In the exposed part, a more excellent pattern can be formed by alkali development. The acrylic resin having an acidic functional group is preferably a polymer having a carboxyl group. By using a polymer having a carboxyl group, an infrared-absorbing composition having excellent alkali developability and coating film formation can be obtained.

Specific examples of the polymer having such a carboxyl group include the copolymerization disclosed in Japanese Patent Laid-Open No. 11-258415, Japanese Patent Laid-Open No. 2000-56118, and Japanese Patent Laid-Open No. 2004-101728. Thing.

In addition, for example, as disclosed in Japanese Patent Laid-Open No. 11-140144, Japanese Patent Laid-Open No. 2008-181095, and the like, a polymer having an unsaturated polymer group such as a (meth) acrylfluorenyl group in a side chain may be used. A carboxyl group-containing polymer is used as a binder resin. This makes it possible to form the near-infrared cut filter 122 having excellent adhesion to the cured film.

As a carboxyl group-containing polymer which has a polymerizable unsaturated group in a side chain, the following (a)-(d) polymer is mentioned, for example. (A) A polymer obtained by reacting an unsaturated isocyanate compound with a copolymer containing an unsaturated monomer (1) and a monomer composed of a polymerizable unsaturated compound having a hydroxyl group, and (b) an oxetanyl group. (Co) polymers obtained by reacting a polymerizable unsaturated compound having a group with a (co) polymer of a monomer containing an unsaturated monomer (1), (c) combining the unsaturated monomer (1) with A polymer obtained by reacting a copolymer of a polymerizable unsaturated compound having an oxetanyl group and a monomer composed of an unsaturated monomer (1), (d) the unsaturated monomer (1) and A (co) polymer obtained by reacting a (co) polymer of a polymerizable unsaturated compound of a heterocyclic propyl group and further reacting a polybasic acid anhydride. The "(co) polymer" in this specification is a term including a polymer and a copolymer.

The polystyrene-equivalent weight average molecular weight (Mw) of the acrylic resin measured by gel permeation chromatography (hereinafter referred to as "GPC (Gel Permeation Chromatography)") is usually 1,000 to 100,000, preferably 3,000 to 50,000. , More preferably 5,000 to 30,000. The ratio (Mw / Mn) of Mw to the number average molecular weight (Mn) is usually 1.0 to 5.0, and preferably 1.0 to 3.0. By setting it as such an embodiment, a near-infrared cut filter which is excellent in hardenability and adhesiveness can be formed. In addition, Mw and Mn mentioned here mean the weight average molecular weight and number average molecular weight of polystyrene conversion measured by GPC (dissolution solvent: tetrahydrofuran).

From the viewpoint of adhesion with the cured film, the acid value of the acrylic resin having an acidic functional group is preferably 10 mgKOH / g to 300 mgKOH / g, more preferably 30 mgKOH / g to 250 mgKOH / g, and further preferably It is 50 mgKOH / g to 200 mgKOH / g. According to this embodiment, a near-infrared cut-off filter having a low contact angle and excellent wettability can be formed, so that the adhesion to the cured film can be improved. Herein, the "acid value" in the present specification refers to the number of mg of KOH required for neutralizing 1 g of an acrylic resin having an acidic functional group.

The acrylic resin can be produced by a known method, but it can also be disclosed by, for example, Japanese Patent Laid-Open No. 2003-222717, Japanese Patent Laid-Open No. 2006-259680, and International Publication No. 2007/029871. Method to control its structure or Mw, Mw / Mn.

Specific examples of the polyamidoresin resin and polyamidoimide-based resin include compounds described in paragraphs [0118] to [0120] of Japanese Patent Laid-Open No. 2012-189632.

The polyurethane resin is not particularly limited as long as it has a urethane bond as a repeating unit, and can be produced by the reaction of a diisocyanate compound and a diol compound. Examples of the diisocyanate compound include compounds described in paragraph [0043] of Japanese Patent Laid-Open No. 2014-189746. Examples of the diol compound include compounds described in paragraph [0022] of Japanese Patent Laid-Open No. 2014-189746.

Examples of the epoxy resin include a bisphenol-type epoxy resin, a hydrogenated bisphenol-type epoxy resin, and a novolac-type epoxy resin. Among them, a bisphenol-type epoxy resin and a novolac-type epoxy resin are preferred.

Such an epoxy resin can be obtained in the form of a commercial item, for example, a commercial item described in paragraph [0121] of the specification of Japanese Patent No. 5213944 can be mentioned.

The polysiloxane is preferably a hydrolyzed condensate of a hydrolyzable silane compound. As the hydrolyzable silane compound, a hydrolyzable silane having an oxepropyl group, an oxetanyl group, an episulfide group, a vinyl group, an allyl group, a (meth) acrylfluorenyl group, a carboxyl group, or the like can be preferably used. Compound.

Specific examples of such a hydrolyzable silane compound include compounds described in paragraphs [0047] to [0051] and paragraphs [0060] to [0069] of Japanese Patent Laid-Open No. 2010-055066.

Polysiloxane can be synthesized by a known method. The Mw by GPC is usually 500 to 20,000, preferably 1,000 to 10,000, more preferably 1,500 to 7,000, and even more preferably 2,000 to 5,000. The Mw / Mn is preferably 1.0 to 4.0, and more preferably 1.0 to 3.0. By setting it as such an embodiment, it is excellent in coating property, and sufficient adhesiveness can be expressed.

In one embodiment of the present invention, the binder resin may be used alone or as a mixture of two or more. Among these, from the viewpoint of forming a near-infrared cut-off filter having excellent adhesion to a cured film, the binder resin constituting the infrared absorbing composition is preferably an acrylic resin, a polyimide resin, a polyimide resin, or a ring. Oxygen resin and polysiloxane are more preferably acrylic resin, polyimide resin, polyimide resin, epoxy resin, and even more preferably acrylic resin.

In one embodiment of the present invention, the content of the binder resin is usually 5 to 1,000 parts by mass, preferably 10 to 500 parts by mass, and more preferably 20 parts by mass to 100 parts by mass of the infrared absorber. 150 parts by mass. By setting it as such an embodiment, the infrared absorptive composition excellent in coating property and storage stability can be obtained, and when alkali developability is provided, it can be set as the infrared absorptive composition excellent in alkali developability.

<Polymerizable Compound> The infrared-absorbing composition preferably contains a polymerizable compound (except for the binder resin). The polymerizable compound in the present specification means a compound having two or more groups capable of being polymerized. The molecular weight of the polymerizable compound is 4,000 or less, more preferably 2,500 or less, and even more preferably 1,500 or less. Examples of the polymerizable group include an ethylenically unsaturated group, an oxetanyl group, an oxetanyl group, an N-hydroxymethylamino group, and an N-alkoxymethylamino group. In the present invention, the polymerizable compound is preferably a compound having two or more (meth) acrylfluorenyl groups, or a compound having two or more N-alkoxymethylamino groups.

Among these polymerizable compounds, compounds having two or more (meth) acrylfluorenyl groups and compounds having two or more N-alkoxymethylamino groups are more preferable, and trivalent or more Polyfunctional (meth) acrylates obtained by the reaction of aliphatic polyhydroxy compounds with (meth) acrylic acid, polyfunctional (meth) acrylates modified with caprolactone, polyfunctional (modified with alkylene oxide) (Meth) acrylate, polyfunctional (meth) acrylate urethane, polyfunctional (meth) acrylate with carboxyl group, N, N, N ', N', N '', N ''-Six (Alkoxymethyl) melamine, N, N, N ', N'-tetrakis (alkoxymethyl) benzoguanamine (N, N, N', N'-tetra (alkoxymethyl) benzoguanamine), and It is preferably a polyfunctional (meth) acrylate obtained by reacting a trivalent or more aliphatic polyhydroxy compound with (meth) acrylic acid, a polyfunctional (meth) acrylate modified by an alkylene oxide, a polyfunctional (meth) acrylate (Meth) acrylic acid urethane, polyfunctional (meth) acrylate having a carboxyl group. In the case where the near-infrared cut filter is excellent in strength and surface smoothness, and when alkali developability is imparted to the infrared absorbing composition, it is difficult to cause scum and film residue on the substrate of the unexposed portion. Among polyfunctional (meth) acrylates obtained by reacting a trivalent or higher aliphatic polyhydroxy compound with (meth) acrylic acid, trimethylolpropane triacrylate, pentaerythritol triacrylate, and dipentaerythritol pentaerythritol are particularly preferred. Among acrylates, dipentaerythritol hexaacrylates, and polyfunctional (meth) acrylates modified by alkylene oxides, particularly preferred are three modified by at least one selected from ethylene oxide and propylene oxide. Methylolpropane tri (meth) acrylate, pentaerythritol tetra (meth) acrylate modified by at least one selected from ethylene oxide and propylene oxide, selected from ethylene oxide and Dipentaerythritol penta (meth) acrylate modified by at least one of propylene oxide, and dipentaerythritol hexa (meth) acrylate modified by at least one selected from ethylene oxide and propylene oxide. With carboxyl Functional (meth) acrylate, for particularly preferred compound is obtained pentaerythritol triacrylate with succinic anhydride, dipentaerythritol pentaacrylate succinic acid anhydride and reacting the obtained compound. In one embodiment of the present invention, the polymerizable compound may be used alone or as a mixture of two or more kinds.

The content of the polymerizable compound according to an embodiment of the present invention is preferably 10 to 1,000 parts by mass, more preferably 15 to 500 parts by mass, and more preferably 20 parts by mass to 100 parts by mass of the infrared absorber. 150 parts by mass. By setting it as such an embodiment, hardenability and adhesiveness can be further improved.

<Solvent> The infrared absorbing composition is usually prepared as a liquid composition by blending a solvent. As a solvent, those which disperse or dissolve the components constituting the infrared absorbing composition and have moderate volatility without reacting with these components can be appropriately selected and used.

Among these solvents, (poly) alkylene glycol monoalkyl ethers, alkyl lactate, and (poly) alkylene glycol monoalkyl ether acetate are preferred from the viewpoints of solubility and coating properties. Type, other ethers, ketones, diacetates, alkoxycarboxylic acid esters, and other esters, particularly preferably propylene glycol monomethyl ether, propylene glycol monoethyl ether, ethylene glycol monomethyl ether acetate, and propylene glycol monoester Methyl ether acetate, propylene glycol monoethyl ether acetate, 3-methoxybutyl acetate, diethylene glycol dimethyl ether, and the like.

In one embodiment of the present invention, the solvent may be used alone or as a mixture of two or more kinds.

The content of the solvent is not particularly limited, and the total concentration of the components other than the solvent of the infrared absorbing composition is preferably an amount of 5 to 50% by mass, and more preferably an amount of 10 to 30% by mass . By setting it as such an embodiment, the infrared-absorbing composition with favorable coating property can be obtained.

<Photosensitizer> A photosensitizer can be contained in the infrared-absorbing composition of this invention. Here, the "photosensitizer" as used in this specification means the compound which has the property which changes the solubility of the infrared absorptive composition to a solvent by light irradiation. Examples of such a compound include a photopolymerization initiator and an acid generator. The photosensitizer can be used alone or in combination of two or more.

The photopolymerization initiator is not particularly limited as long as it can generate an acid or a radical by light, and examples thereof include a thia anthrone compound, an acetophenone compound, a biimidazole compound, and Azine-based compound, O-fluorenyl oxime-based compound, onium salt-based compound, benzoin-based compound, benzophenone-based compound, α-diketone-based compound, polynuclear quinone-based compound, diazonium-based compound, fluorenimine sulfonic acid Ester-based compounds. The photopolymerization initiator may be used alone or in combination of two or more.

The acid generator is not particularly limited as long as it is a compound that generates an acid by heat or light, and examples thereof include onium salts such as sulfonium salts, benzothiazolium salts, ammonium salts, and sulfonium salts, and N-hydroxyfluorene A sulfamate compound, an oxime sulfonate, an o-nitrobenzyl sulfonate, a quinone diazide compound, and the like. The acid generator may be used alone or in combination of two or more kinds. Specific examples of the oxime sulfonate include compounds described in paragraphs [0122] to [0131] of Japanese Patent Laid-Open No. 2014-115438. Specific examples of the quinonediazide compound include compounds described in paragraphs [0040] to [0048] of Japanese Patent Laid-Open No. 2008-156393, and paragraph [0172 of Japanese Patent Laid-Open No. 2014-174406. ] To the compound described in paragraph [0186].

In the solid content of the infrared absorbing composition, the content of the photosensitizer is preferably 0.03% to 10% by mass, more preferably 0.1% to 8% by mass, and even more preferably 0.5% to 6% by mass. By setting it as such an embodiment, hardenability and adhesiveness can be further improved.

<Dispersant> A dispersant may be contained in the infrared absorbing composition. Examples of the dispersant include a urethane-based dispersant, a polyethyleneimine-based dispersant, a polyoxyalkylene alkyl ether-based dispersant, and a polyoxyalkylene alkylphenyl ether-based dispersant. , Poly (alkanediol) diester-based dispersant, sorbitan fatty acid ester-based dispersant, polyester-based dispersant, (meth) acrylic-based dispersant, and the like.

Among these, in the case where alkali developability is imparted to the infrared absorbing composition, from the viewpoint of forming a near-infrared cut-off filter 122 with few development residues, it is preferred that the dispersion includes repeating units having an alkylene oxide structure. Agent.

The dispersant can be used alone or as a mixture of two or more. The content of the dispersant is preferably 5 to 200 parts by mass, more preferably 10 to 100 parts by mass, and even more preferably 20 to 70 parts by mass based on 100 parts by mass of the total solid content of the infrared absorbing composition. Serving.

<Additives> Various additives may be contained in the infrared-absorbing composition as needed. Examples of the additives include fillers such as glass and alumina; polymer compounds such as polyvinyl alcohol and poly (fluoroalkyl acrylate); surfactants such as fluorine-based surfactants and silicon-based surfactants; Accelerators, antioxidants, etc.

<< Curable Film >> The cured film 144 may be provided between the color filter layer 107 a to the color filter layer 107 c and the microlens array 115. The cured film 144 is preferably transparent to both the visible light wavelength region and the infrared wavelength region. With respect to light incident through the microlens array 115, light in a specific wavelength range passes through the near-infrared cut filter 122, the infrared filter layer 108, the color filter layer 107a to the color filter layer 107c, and enters the photodiode. The body 106a to the photodiode 106d are preferably provided in the optical path of the incident light, and the light outside the various filter layers is not attenuated as much as possible.

In addition, it is preferable that the cured film 144 has insulation properties so as not to cause parasitic capacitance with the wiring layer 113. Since the cured film 144 is provided substantially in front of the optical filter layer 114, if the cured film 144 is conductive, an inadvertent parasitic capacitance may be generated between the cured film 144 and the wiring layer 113. If a parasitic capacitance occurs, the detection operation of the photodiode 106a to the photodiode 106d will be hindered. Therefore, the cured film 144 is preferably insulating.

In addition, it is expected that the cured film 144 is excellent in adhesion with a layer in contact with the cured film 144. For example, if the adhesion between the cured film 144 and the near-infrared cut filter 122 is poor, peeling occurs, and the optical filter layer 114 is damaged.

Further, the hardened film 144 is embedded in the near-infrared cut filter 122, the infrared filter layer 108, the color filter layer 107a to the color filter layer 107c, and the microlens array 115 is provided thereon. flattened. That is, it is preferable that the cured film 144 is also used as a planarization film.

From the viewpoint of obtaining a cured film having translucency and insulation with respect to such required characteristics, it is preferable to use an organic film as the cured film 144. The organic film is more preferably a planarized film obtained by using a curable composition for planarizing film formation. That is, a flattening film (hardened film) having a flat surface can be obtained by the leveling action after the hardening composition for forming a flattening film is applied, even if the base surface includes unevenness.

The composition for producing the cured film 144 is preferably a curable composition including a curable compound and a solvent, and particularly preferably a curable composition for forming a flattened film including a curable compound and a solvent. As the solvent in the curable composition, the same solvent as that described in the infrared-absorbing composition can be used, and preferred embodiments are the same as those described above.

Hereinafter, the curable compound constituting the curable composition will be described.

<Sclerosing Compound> As the sclerosing compound constituting the sclerosing composition, any compound that can be cured by light or heat may be used, and examples thereof include a resin having an oxygen-containing saturated heterocyclic group and a polymer having a side chain. Resin, unsaturated polysiloxane, polyimide resin, polyimide resin, polymerizable compound, etc.

Examples of the oxygen-containing saturated heterocyclic group in the resin having an oxygen-containing saturated heterocyclic group include the same as described above. Among them, oxetanyl and oxetanyl are preferred, and oxetanyl is more preferred. Propyl.

The resin having an oxygen-containing saturated heterocyclic group is preferably an acrylic resin having an oxygen-containing saturated heterocyclic group, and specific examples thereof include (co) polymers of a (meth) acrylate having an oxygen-containing saturated heterocyclic group. Examples of such (co) polymers include the same (co) polymers as those described in the infrared-absorbing composition.

Examples of the polyimide resin, polyimide resin, and polymerizable compound include the same polyimide resin, polyimide resin, and polymerizable compound as described in the infrared absorption composition.

Among the polymerizable compounds constituting such a curable composition, a resin having an oxygen-containing saturated heterocyclic group and a side chain are preferred from the viewpoint of forming a cured film having excellent adhesion to the near-infrared cut filter. The resin having a polymerizable unsaturated group, polysiloxane, polyimide resin, and polyamido resin are more preferably a resin having an oxygen-containing saturated heterocyclic group, a resin having a polymerizable unsaturated group in a side chain, Polysiloxane.

<Photosensitizer> A photosensitizer may be further contained in a curable composition. Examples of the photosensitizer include the same as described above, and specific compounds and embodiments are the same as described above.

<Additives> The curable composition may further contain additives. Examples of the additive include the same as described above. Among them, adhesion promoters and block isocyanate compounds are preferred.

From the viewpoint of forming a cured film having excellent adhesion to a near-infrared cut filter in the curable composition for forming a flattened film described above, any of the following is preferred. (2-I) a curable composition containing a resin having an oxygen-containing saturated heterocyclic group and a solvent, (2-II) a curable composition containing a resin having a polymerizable unsaturated group in a side chain and a solvent, (2 -III) A curable composition containing polysiloxane and a solvent. The preferred embodiments of these (2-I) to (2-III) are as described above.

The solid-state imaging device 210 according to the present embodiment may have two band-pass filters provided on the microlens array 115 in addition to the above-mentioned configuration. That is, on the upper surfaces of the near-infrared cut-off filter 122 and the infrared filter layer 108, an average transmittance of 75% or more in a range of 430 nm to 580 nm and a range of 720 to 750 nm may be set. Bandpass with an average transmittance of 15% or less, an average transmittance of 60% or more in the range of 810 nm to 820 nm, and an average transmittance of 15% or less in the range of 900 nm to 2000 nm filter. By adding two band-pass filters, the filtering capabilities in the visible wavelength region and the infrared wavelength region can be further improved.

(Second Embodiment) The configuration of a solid-state imaging device 220 according to this embodiment is shown in FIG. 2. A point different from the first embodiment is that the structure of the near-infrared cut filter 140 further includes a silicon oxide layer 134 and a resin layer 135. Since the configuration of the solid-state imaging device 110 is the same as that of the first embodiment, detailed description is omitted.

[Near-Infrared Cut-Off Filter] As shown in FIG. 2, the near-infrared cut-off filter 140 includes a base material 131, a dielectric multilayer film 132, a dielectric multilayer film 133, a silicon oxide layer 134, and a resin layer 135. A dielectric multilayer film 132 is provided on one side of the substrate 131. A silicon oxide layer 134, a resin layer 135, and a dielectric multilayer film 133 are provided on the other surface of the substrate 131. The resin layer 135 of the near-infrared cut filter 140 is provided at a position facing the near-infrared cut filter 122.

As the substrate 131, a glass substrate or a resin substrate can be used. When a glass substrate is used as the substrate 131, the glass substrate described in the first embodiment can be used.

A specific example of such a glass substrate is not particularly limited as long as it is a substrate containing silicate as a main component, and examples thereof include a quartz glass substrate having a crystal structure. In addition, borosilicate glass substrates, soda glass substrates, and colored glass substrates can be used. However, especially glass substrates such as alkali-free glass substrates and low-alpha glass substrates have little influence on solid-state imaging elements. The solid-state imaging element is preferably arranged close to each other.

The thickness of the glass substrate is preferably 30 μm to 1,000 μm, more preferably 50 μm to 750 μm, and particularly preferably 50 μm to 700 μm. When the thickness of the glass substrate is thinner than 30 μm, the glass substrate itself is likely to be broken, so that the operation may be extremely difficult. In addition, when the thickness of the glass substrate is thicker than 1000 μm, the original purpose of thinning the near-infrared cut filter may not be achieved.

When the thickness of the glass substrate is within the above range, the near-infrared cut filter can be miniaturized and lightened, and can be suitably used for various applications such as solid-state imaging devices. In particular, when it is used for a lens unit such as a camera module, the lens unit can be reduced in height, which is preferable.

Such a glass substrate is particularly preferably a CuO-containing fluorophosphate glass or a CuO-containing phosphate glass. Specifically, a glass substrate described in Japanese Patent Laid-Open No. 2006-342024 and the like can be used.

If the resin layer 135 is formed directly on the base material 131, the adhesion between the resin and the base material is poor, and therefore the resin layer is likely to be peeled off. Since the silicon oxide layer 134 is provided on the base material 131, peeling of the resin layer can be prevented. The layer formed by the oxide is not limited to silicon oxide, and is preferably silicon oxide from the viewpoint of light transmittance. In addition, from the viewpoint of improving the adhesion, the surface of the glass substrate can also be cleaned by ultraviolet rays.

The resin layer 135 includes a near-infrared absorber. The near-infrared absorber preferably has a maximum absorption wavelength between 600 nm and 800 nm (hereinafter also referred to as "λmax"), more preferably between 640 nm and 770 nm, and particularly preferably between 660 nm and 720. There is between nm. Since the wavelength range has λmax, the wavelength range of the light incident on the light receiving element having sensitivity to near-infrared light is limited, so the color of the image captured by the solid-state imaging element is closer to that actually observed by visual observation To the color.

In addition, the resin layer 135 preferably contains a resin having heat resistance applicable to the reflow process.

The number of laminated layers of the dielectric multilayer film 133 provided on the first surface side of the substrate 131 is preferably smaller than the number of laminated layers of the dielectric multilayer film 132 provided on the second surface side. The number of laminated layers of the dielectric multilayer film 133 provided on the first surface side of the base material 131 is 10 or less, and preferably 7 or less. The number of laminates of the dielectric multilayer film 132 provided on the second surface side of the base material 131 is preferably 10 or more and less than 40, more preferably 20 or more and less than 40, and particularly preferably 20 or more And 30 floors or less. In addition, when the substrate 131 has sufficient rigidity, the dielectric multilayer film 133 may be omitted. The configurations of the dielectric multilayer film 132 and the dielectric multilayer film 133 only need to refer to the first embodiment, and therefore detailed descriptions thereof are omitted.

The solid-state imaging device 220 according to this embodiment has a near-infrared cut filter 140 including a silicon oxide layer 134 and a resin layer 135. The solid-state imaging device 220 has heat resistance applicable to the reflow step and is incident on light having sensitivity to near-infrared light. The wavelength range of the light of the receiving element is limited, so the color of the image captured by the solid-state imaging element is closer to the color actually observed by visual observation.

The solid-state imaging device 220 of this embodiment is provided with a near-infrared cut-off filter 122 on the solid-state imaging element 110, and further includes a near-infrared cut-off filter 140 on the near-infrared cut-off filter 122. The near-infrared cut filter and the resin layer 135 provided on the solid-state imaging element 110 can further cut off the infrared rays. Thereby, the number of layers of the dielectric multilayer film 132 and the dielectric multilayer film 133 can be reduced. In addition, even if the number of layers of the dielectric multilayer film 132 and the dielectric multilayer film 133 is reduced, the warpage of the near-infrared cut filter 140 can be reduced. In addition, since the number of layers of the dielectric multilayer film 132 and the dielectric multilayer film 133 can be reduced, manufacturing steps can be reduced and the yield can be improved.

Next, the resin layer 135 provided in the near-infrared cut filter 140 will be described in detail.

<< Resin Layer >> The resin layer 135 used in the present invention preferably contains a resin having heat resistance applicable to a reflow step and a near-infrared absorber having a maximum absorption between a wavelength of 600 nm to 800 nm.

<The resin having heat resistance> The glass transition temperature (Tg) of the resin having heat resistance is preferably 0 ° C to 380 ° C. The lower limit of Tg is more preferably 40 ° C or higher, even more preferably 60 ° C or higher, even more preferably 70 ° C or higher, and particularly preferably 100 ° C or higher. The upper limit of Tg is more preferably 370 ° C or lower, and even more preferably 360 ° C or lower. When the Tg of the transparent resin is in the range of 0 ° C to 380 ° C, deterioration or deformation due to heat can be suppressed during the manufacturing process or use of the optical filter.

Specific examples of such resins include polyester resins, polyether resins, acrylic resins, polyolefin resins, cyclic olefin resins, polycarbonate resins, thiol-ene resins, and epoxy resins. Resin, polyimide resin, polyimide resin, polyimide resin, polyimide resin, polystyrene resin, polyarylate resin, polyimide resin, polyether resin, polypair Benzene resin, polyarylene ether phosphine oxide resin, etc. Among these, an acrylic resin, a polyester resin, a polycarbonate resin, or a cyclic olefin resin is preferable. The polyester resin is preferably a polyethylene terephthalate resin, a polyethylene naphthalate resin, or the like. In applications requiring heat resistance, polyester resins, polycarbonate resins, and polyimide resins having a high Tg are preferred. The refractive index of the transparent resin can be adjusted by adjusting the molecular structure and the like of the raw material components. Specifically, the method of giving a specific structure to the main chain or the side chain of the polymer of a raw material component is mentioned. The structure provided in the polymer is not particularly limited, and examples thereof include a fluorene skeleton. The transparent resin may be a polymer alloy obtained by combining a plurality of different resins.

A commercially available product can also be used as the resin. Examples of commercially available products include Ogsol (registered trademark) EA-F5003 (trade name, manufactured by Osaka Gas Chemicals, Inc.), which is an acrylic resin, and polymethyl methacrylate. , Polyisobutyl methacrylate, BR50 (manufactured by Mitsubishi Rayon Co., Ltd., trade name), etc.

In addition, OKPH4HT, OKPH4, B-OKP2, and OKP-850 (the above are all manufactured by Osaka Gas Chemical Co., Ltd.) as polyester resins, Vylon (registered trademark) 103 (Toyobo ( (Trade name), polycarbonate resin LeXan (registered trademark) ML9103 (manufactured by sabic, trade name), EP5000 (manufactured by Mitsubishi Gas Chemical Co., Ltd., trade name), SP3810 ( Teijin Kasei (stock) manufacturing, trade name), SP1516 (Teijin Kasei (stock) manufacturing, trade name), TS2020 (Teijin Kasei (stock) manufacturing, trade name), Celex (registered trademark) 7507 (sabic Company manufacturing, trade name) etc.

Furthermore, examples of the cyclic olefin resin are ARTON (registered trademark) (manufactured by JSR, Inc., trade name, Tg: 165 ° C), ZEONEX (registered trademark) (Japan Rui Won ( Stock) manufacturing, trade name, Tg: 138 ° C) and so on.

<Near-infrared absorber> The near-infrared absorber that can be used in the near-infrared cut filter of the present invention (iv) The weight reduction temperature of 5% measured by thermogravimetric analysis in the atmosphere is preferably 250 ° C or higher, and further The temperature is preferably above 260 ° C, and particularly preferably above 270 ° C. By satisfying the above conditions by the weight reduction temperature, it does not decompose even under high temperature conditions, can ensure sufficient thermal properties for use in the reflow step, and can provide a stable quality near-infrared cut filter.

In addition, the near-infrared absorber used in the present invention preferably has a maximum absorption at a wavelength of 600 nm to 800 nm, and further preferably has a maximum absorption in a range of 640 (nm) to 770 (nm), particularly preferably It has the maximum absorption in the range of 660 (nm) to 720 (nm).

By using such a near-infrared absorbing agent, a multilayer board and a near-infrared cut filter satisfying the above (A) to (D) and (i) can be obtained.

Examples of such a near-infrared absorbing agent include a cyanine dye, a phthalocyanine dye, an ammonium dye, an imine dye, an azo dye, an anthraquinone dye, a diimmonium dye, and a square acid. Onium salt pigments and porphyrin pigments.

Since the resin layer containing such a near-infrared absorber has the above-mentioned heat resistance, it can be applied to a reflow step.

Specific examples of commercially available products of the near-infrared absorbing agent include: Lumogen IR765, Lumogen IR788 (manufactured by BASF); ABS643, ABS654, ABS667, ABS670T , IRA693N, IRA735 (manufactured by Exiton); SDA3598, SDA6075, SDA8030, SDA8303, SDA8470, SDA3039, SDA3040, SDA3922, SDA7257 (manufactured by HW SANDS); TAP-15, IR- 706 (manufactured by Yamada Chemical Industry).

These near-infrared absorbers may be used alone or in combination of two or more.

In the present invention, the use amount of the near-infrared absorber may be appropriately selected according to the desired characteristics, and is generally 0.01% to 10.0% by weight, preferably 0.01% to 100% by weight of the resin used in the present invention. % By weight to 8.0% by weight, more preferably 0.01% by weight to 5.0% by weight.

When the amount of the near-infrared absorbing agent used is within the above range, a near-infrared cut-off filter having a small absorption angle dependence of the absorption wavelength, a near-infrared cutoff ability, and a transmittance and strength in the range of 430 to 580 nm can be obtained .

When the amount of the near-infrared absorber used is larger than the above range, a near-infrared cut-off filter that more strongly exhibits the characteristics of the near-infrared absorber may be obtained, but there is a transmission in a range of 430 nm to 580 nm. There is also a concern that the rate will be lower than the expected value, or that the strength will be reduced as a resin layer or a near-infrared cut filter. If the amount of near-infrared absorber used is less than the above range, 430 nm to 580 nm may also be obtained. A near-infrared cut-off filter having a high transmittance in the range of 5% may be difficult to obtain, and it may be difficult to obtain a near-infrared cut-off filter in which the characteristics of the near-infrared absorber are difficult to express and the incident wavelength dependency of the absorption wavelength is small.

<Optical characteristics of resin layer> The resin layer of the present invention (i) has a maximum absorption wavelength (hereinafter also referred to as "λmax") between 600 (nm) and 800 (nm), and preferably 640 (nm) It has ˜770 (nm), and more preferably has 660 (nm) to 720 (nm). Since the wavelength range has the λmax, the wavelength range of the light incident on the light receiving element having sensitivity to near-infrared light is limited, so the color of the image captured by the solid-state imaging element is closer to that actually seen by visual inspection. Observed color.

<Other components> As long as the effect of the present invention is not impaired, other components such as an antioxidant, an ultraviolet absorber, and a surfactant may be further added to the resin layer.

Examples of the antioxidant include 2,6-di-tert-butyl-4-methylphenol, 2,2'-dioxy-3,3'-di-tert-butyl-5,5'-di Methyldiphenylmethane and tetrakis [methylene-3- (3,5-di-tert-butyl-4-hydroxyphenyl) propionate] methane.

Examples of the ultraviolet absorber include 2,4-dihydroxybenzophenone and 2-hydroxy-4-methoxybenzophenone.

When the resin layer is produced by the solution casting method, the production of the resin layer can be facilitated by adding a surfactant or an antifoaming agent.

In addition, additives such as an antioxidant, an ultraviolet absorber, and a surfactant may be mixed with a resin component and the like during the production of a resin layer, and may also be added during a synthetic resin. In addition, the addition amount may be appropriately selected according to the desired characteristics, but it is usually 0.01 to 5.0 parts by weight, and preferably 0.05 to 2.0 parts by weight with respect to 100 parts by weight of the resin, respectively.

Third Embodiment The configuration of a solid-state imaging device 230 according to this embodiment is shown in FIG. 3. The second embodiment differs from the second embodiment in that the structure of the near-infrared cut filter 150 includes a resin substrate 141 including a near-infrared absorber instead of the substrate 131, and an aspect in which a resin layer 135 that does not absorb infrared rays is provided. . Since the configuration of the solid-state imaging device 110 is the same as that of the first embodiment, detailed description is omitted.

[Near-Infrared Cut-Off Filter] As shown in FIG. 3, the near-infrared cut-off filter 150 includes a resin substrate 141 containing a near-infrared absorber, a dielectric multilayer film 132, a dielectric multilayer film 133, and a silicon oxide layer 134. . A dielectric multilayer film 132 is provided on one side of the resin substrate 141. In addition, a silicon oxide layer 134 and a dielectric multilayer film 133 are provided on the other surface of the resin substrate 141. The near-infrared cut filter 150 is provided at a position facing the near-infrared cut filter 122.

The resin substrate 141 includes a resin having heat resistance applicable to the reflow process, and a near-infrared absorber having a maximum absorption wavelength (hereinafter also referred to as “λmax”) between 600 nm and 800 nm. Since the wavelength range has λmax, the wavelength range of light incident on the light receiving element having sensitivity to near-infrared light is limited, so the color of the image captured by the solid-state imaging element can be closer to that actually seen by visual inspection Observed color.

The near-infrared absorber included in the resin substrate 141 preferably has a maximum absorption wavelength between 600 nm and 800 nm, more preferably has a maximum absorption wavelength between 640 nm and 770 nm, and particularly preferably 660 nm to Maximum absorption wavelength between 720 nm. Since the wavelength range has λmax, the wavelength range of the light incident on the light receiving element having sensitivity to near-infrared light is limited, so the color of the image captured by the solid-state imaging element is closer to that actually observed by visual observation To the color.

In addition, the resin substrate 141 preferably contains a resin having heat resistance that can be applied to a reflow step.

The resin substrate 141 is formed of a composition including the infrared absorber and a heat-resistant resin. The infrared-shielding property of the shorter wavelength side of the resin substrate 141 is high, and the infrared-shielding property of the longer wavelength side is low. With respect to such a resin base material 141, a dielectric multilayer film can be preferably used as the dielectric multilayer film, which has optical properties of low infrared shielding properties on the shorter wavelength side and high infrared shielding properties on the longer wavelength side.

The dielectric multilayer film preferably satisfies the following formula (i). x <y ≦ z / 0.95 ·· (i) (In the formula (i), x is an average value of the absorbance of the dielectric multilayer film in a range of wavelengths from 700 nm to 800 nm. y is a wavelength of 800 nm The average value of the absorbance of the dielectric multilayer film in the range from 900 nm to 900 nm. Z is the average value of the absorbance of the dielectric multilayer film in the range of wavelengths from 900 nm to 1200 nm)

The dielectric multilayer film can be produced, for example, by a method described in Japanese Patent Laid-Open No. 2016-146619.

By using such a dielectric multilayer film in combination with the resin substrate 141 having infrared absorption energy, it is possible to reduce the incidence angle dependency that can be generated in the dielectric multilayer film, and it can be used over a wide wavelength range. Good infrared absorption energy. The resin base material 141 can be manufactured by the method described in WO2016 / 117596.

The number of laminated layers of the dielectric multilayer film 133 provided on the first surface side of the substrate 131 is preferably smaller than the number of laminated layers of the dielectric multilayer film 132 provided on the second surface side. The number of laminated layers of the dielectric multilayer film 133 provided on the first surface side of the base material 131 is 10 or less, and preferably 7 or less. The number of laminates of the dielectric multilayer film 132 provided on the second surface side of the base material 131 is preferably 10 or more and less than 40, more preferably 20 or more and less than 40, and particularly preferably 20 or more And 30 floors or less. In addition, when the substrate 131 has sufficient rigidity, the dielectric multilayer film 133 may be omitted. The configurations of the dielectric multilayer film 132 and the dielectric multilayer film 133 only need to refer to the first embodiment, and therefore detailed descriptions thereof are omitted.

The solid-state imaging device 230 according to this embodiment has a heat-resistance that can be applied to a reflow step by a near-infrared cut-off filter 150 including a silicon oxide layer 134 and a resin substrate 141 containing a near-infrared absorber. The wavelength range of the light of the light receiving element having sensitivity in the near-infrared light is limited, so the color of the image captured by the solid-state imaging element is closer to the color actually observed by visual observation.

In this embodiment, a near-infrared absorbing dye is used as the resin base material 141 of the near-infrared cut filter 150. Thereby, it is not necessary to provide the resin layer 135 described in the second embodiment. In addition, the solid-state imaging element 110 is provided with a near-infrared cut-off filter 122 on the light-receiving element, thereby also having a near-infrared cut-off effect on the solid-state imaging element 110 side. The near-infrared cut-off filter 150 does not need to be laminated with a plurality of dielectric multilayer films having different refractive indexes, and thus can suppress warping of the entire near-infrared cut-off filter 150 as a whole. In addition, the near-infrared cut-off filter 150 does not need to be laminated with a plurality of dielectric multilayer films having different refractive indexes, so that the manufacturing steps can be reduced and the yield can be improved. [Example]

In this example, in order to confirm the relationship between the number of layers of the dielectric multilayer film and the infrared cut-off filter layer, the results of performing a substitution experiment (measurement of the transmittance of the film) shown below will be described.

In this embodiment, samples A to E are prepared. 4A to 4C are diagrams showing the configurations of samples A to E. FIG. FIG. 4A is a diagram showing the structure of sample A, FIG. 4B is a diagram showing the structure of samples B to D, and FIG. 4C is a diagram showing the structure of sample E.

As shown in FIG. 4A, sample A has a configuration in which a near-infrared cut filter 202 is provided on a glass substrate 201. The near-infrared cut filter 202 corresponds to the near-infrared cut filter 122 described in the previous embodiment.

As shown in FIG. 4B, sample B has a configuration in which a near-infrared cut filter 202 is provided on a glass substrate 201 and a ten-layer dielectric multilayer film 203 is provided on the near-infrared cut filter 202. Sample C has the same configuration as Sample B except that a dielectric multilayer film 203 of 20 layers is used. Sample D has the same configuration as Sample B except that a dielectric multilayer film 203 of 30 layers is used.

As shown in FIG. 4C, Sample E has a configuration in which 40 layers of a dielectric multilayer film 203 are provided on a resin substrate 204 containing a near-infrared absorber. Here, the resin base material 204 corresponds to the resin base material 141 described in the previous embodiment. The detailed structure of the sample E may be referred to Japanese Patent No. 5499669.

Next, transmittance was measured for samples A to E using a Hitachi spectrophotometer U-4100. A spectrophotometer can be used to automatically calculate the average value of the transmittance for a given wavelength range. The average transmittance is specifically a value in which the transmittance at each wavelength is measured in units of 1 nm in the provided wavelength range, and the total of the transmittances is divided by the number of measured transmittances (wavelength range) ).

The results obtained by measuring the transmittances of samples A to E are shown in FIG. 5. In FIG. 5, the horizontal axis represents the wavelength (Wavelength (nm)), and the vertical axis represents the transmittance (T (%)).

As shown in FIG. 5, the average transmittance of Sample A at a wavelength of 700 nm to 1000 nm is 54.5%. In addition, the average transmittance of Sample E at a wavelength of 700 nm to 1000 nm was 0.2%. In contrast, the average transmittances of samples B, C, and D at wavelengths of 700 nm to 1000 nm were 3.6%, 0.9%, and 0.2%, respectively. Samples B to D are different from sample E, and a near-infrared cut-off filter 202 is used. The use of the near-infrared cut-off filter 202 shows that sufficient infrared cut-off performance can be obtained even if the number of dielectric volume layer films is small and is 20 to 30. [Industrial availability]

The solid-state imaging device of the present invention can be preferably used for a digital still camera, a mobile phone camera, a digital video camera, a personal computer camera, a surveillance camera, a car camera, a television, a car-mounted device for a car navigation system, a mobile information terminal, Video game consoles, portable game consoles, devices for fingerprint authentication systems, digital music players, etc.

101‧‧‧Pixel Department

102‧‧‧Pixels for visible light detection

103‧‧‧Pixels for infrared light detection

104a ～ 104c‧‧‧The first pixel

105‧‧‧ 2nd pixel

106a ～ 106d‧‧‧Photodiode

107a ～ 107c‧‧‧Color filter layer

108‧‧‧ Infrared Filter Layer

110‧‧‧ solid-state imaging element

111‧‧‧ semiconductor substrate

112‧‧‧Semiconductor layer

113‧‧‧Wiring layer

114‧‧‧Optical filter layer

115‧‧‧ micro lens array

121, 123‧‧‧hardened film

122, 130, 140, 150, 202‧‧‧ near infrared cut-off filters

131‧‧‧ substrate

132, 133, 203‧‧‧ dielectric multilayer films

134‧‧‧Silicon oxide layer

135‧‧‧resin layer

141, 204‧‧‧ resin substrate

201‧‧‧ glass substrate

210, 220, 230‧‧‧ solid-state imaging device

FIG. 1 is a schematic configuration of an example of a solid-state imaging device applied to each embodiment of the present invention. FIG. 2 is a schematic configuration of an example of a solid-state imaging device applied to each embodiment of the present invention. FIG. 3 is a schematic configuration of an example of a solid-state imaging device applied to each embodiment of the present invention. FIG. 4A is a diagram showing a configuration of a sample according to an example of the present invention. FIG. 4B is a diagram showing a configuration of a sample according to an example of the present invention. FIG. 4C is a diagram showing a configuration of a sample according to an example of the present invention. FIG. 5 is a graph showing the results of measuring the transmittance of a sample according to an example of the present invention.

Claims (19)

A solid-state imaging device includes a first near-infrared cut-off filter and a solid-state imaging element. The first near-infrared cut-off filter includes: a glass substrate; and a dielectric multilayer on at least one of the glass substrates. A film, the solid-state imaging element includes: a semiconductor substrate; a first light receiving element provided on the semiconductor substrate; and an optical filter provided on the first light receiving element, the optical filter having: A color filter layer on the first light receiving element; and a second near-infrared cut-off filter provided on the color filter layer, the first near-infrared cut-off filter is provided on the second near-infrared cut-off filter. Where the infrared cutoff filters face each other, the number of laminated layers of the dielectric multilayer film is set to be 10 layers or more and less than 40 layers. The solid-state imaging device according to item 1 of the scope of patent application, wherein the glass substrate is CuO-containing fluorophosphate glass or CuO-containing phosphate glass. The solid-state imaging device according to item 1 of the scope of patent application, wherein the optical filter further includes a first cured film on the second near-infrared cut filter. The solid-state imaging device according to item 1 of the patent application scope, wherein the optical filter further has a second cured film between the color filter layer and the second near-infrared cut-off filter. The solid-state imaging device according to item 1 of the patent application scope further includes a second light receiving element provided on the semiconductor substrate, and a filter layer overlapping the second light receiving element. The solid-state imaging device according to item 1 of the scope of patent application, wherein the number of laminated layers of the dielectric multilayer film is set to be 20 or more and 30 or less. The solid-state imaging device according to item 1 of the scope of patent application, wherein the second near-infrared cut-off filter includes a tungsten cesium oxide compound, and a compound selected from the group consisting of a diimide-based compound, a cubonium salt-based compound, and a cyanine-based compound. At least one of organic compounds of the compound, phthalocyanine-based compound, naphthalocyanine-based compound, benzodifluorene-based compound, ammonium-based compound, imine-based compound, pyrrolopyrrole-based compound, and ketonium-based compound pigment. A solid-state imaging device includes a first near-infrared cut-off filter and a solid-state imaging element. The first near-infrared cut-off filter includes: a substrate; and a first dielectric multilayer provided on a first surface of the substrate. A film; a resin layer provided on the second surface of the base material; and a second dielectric multilayer film provided on the second surface of the base material via the resin layer, the solid-state imaging element having: a semiconductor A substrate; a first light receiving element provided on the semiconductor substrate; and an optical filter provided on the first light receiving element, the optical filter having: a color provided on the first light receiving element A filter layer; and a second near-infrared cut-off filter provided on the color filter layer, and the resin layer of the first near-infrared cut-off filter is provided to face the second near-infrared cut-off filter. The number of layers of the first dielectric multilayer film is set at 10 or more and less than 40. The solid-state imaging device according to item 8 of the scope of patent application, wherein the optical filter further includes a first cured film on the first near-infrared cut filter. The solid-state imaging device according to item 8 of the scope of patent application, wherein the optical filter further has a second cured film between the color filter layer and the first near-infrared cut filter. The solid-state imaging device according to item 8 of the scope of patent application, further comprising a second light receiving element provided on the semiconductor substrate, and a filter layer overlapping the second light receiving element. The solid-state imaging device according to item 8 of the scope of patent application, wherein the number of laminated layers of the first dielectric multilayer film is set to be 20 or more and 30 or less. The solid-state imaging device according to item 8 of the scope of patent application, wherein the second near-infrared cut-off filter includes a tungsten cesium oxide compound, and a compound selected from the group consisting of a diimide-based compound, a squarylium salt-based compound, and a cyanine-based compound. At least one of organic compounds of the compound, phthalocyanine-based compound, naphthalocyanine-based compound, benzodifluorene-based compound, ammonium-based compound, imine-based compound, pyrrolopyrrole-based compound, and ketonium-based compound pigment. A solid-state imaging device includes a first near-infrared cut-off filter and a solid-state imaging element. The first near-infrared cut-off filter includes: a resin substrate containing a near-infrared absorber; and at least one of the resin substrate The dielectric multilayer film of the present invention, the solid-state imaging element includes: a semiconductor substrate; a first light receiving element provided on the semiconductor substrate; and an optical filter provided on the first light receiving element, wherein: The optical filter includes: a color filter layer provided on the first light receiving element; and a second near-infrared cut-off filter provided on the color filter layer. The first near-infrared cut-off filter is provided. At the position opposite to the second near-infrared cut-off filter, the number of laminated layers of the dielectric volume layer film is set to be 10 layers or more and less than 40 layers. The solid-state imaging device according to item 14 of the patent application scope, wherein the optical filter further includes a first cured film on the first near-infrared cut filter. The solid-state imaging device according to item 14 of the scope of patent application, wherein the optical filter further includes a second cured film between the color filter layer and the first near-infrared cut filter. The solid-state imaging device according to item 14 of the scope of patent application, further comprising a second light receiving element provided on the semiconductor substrate and a filter layer overlapping the second light receiving element. The solid-state imaging device according to item 14 of the scope of patent application, wherein the number of laminated layers of the dielectric multilayer film is set to be 20 or more and 30 or less. The solid-state imaging device according to item 14 of the scope of patent application, wherein the second near-infrared cut-off filter includes a tungsten cesium oxide compound, and a compound selected from the group consisting of a diimide-based compound, a squarylium salt-based compound, and a cyanine-based compound. At least one of organic compounds of the compound, phthalocyanine-based compound, naphthalocyanine-based compound, benzodifluorene-based compound, ammonium-based compound, imine-based compound, pyrrolopyrrole-based compound, and ketonium-based compound pigment.