TW201904360A - Plasma processing device and method for manufacturing surface treated film - Google Patents

Plasma processing device and method for manufacturing surface treated film Download PDF

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TW201904360A
TW201904360A TW107117558A TW107117558A TW201904360A TW 201904360 A TW201904360 A TW 201904360A TW 107117558 A TW107117558 A TW 107117558A TW 107117558 A TW107117558 A TW 107117558A TW 201904360 A TW201904360 A TW 201904360A
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film
cooling roller
plasma processing
electrodes
electrode
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平野祐哉
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日商日本瑞翁股份有限公司
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma

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Abstract

Provided is a plasma treatment device comprising: a plasma treatment unit capable of subjecting a film to a plasma treatment; and an inversion unit capable of inverting a film that has been delivered from the plasma treatment unit and returning the film to the plasma treatment unit. The plasma treatment unit is comprises: a cooling roller having a peripheral surface that can be contacted by the film delivered to the inversion unit and the film returned from the inversion unit, said cooling roller being provided such that the temperature can be adjusted; and a plurality of electrodes provided facing the peripheral surface of the cooling roller. The plurality of electrodes include a first electrode and a second electrode. The first electrode is provided so that the film being delivered to the inversion unit is conveyed so as to pass between the first electrode and the cooling roller while the film contacts the peripheral surface of the cooling roller, and the second electrode is provided so that the film returned from the inversion unit is conveyed so as to pass between the second electrode and the cooling roller while the film contacts the peripheral surface of the cooling roller.

Description

電漿處理裝置及表面處理薄膜的製造方法Plasma processing device and method for manufacturing surface-treated film

本發明係關於電漿處理裝置及使用此電漿處理裝置之表面處理薄膜的製造方法。The invention relates to a plasma processing device and a method for manufacturing a surface treatment film using the plasma processing device.

以往,已知對薄膜施行電漿處理之技術(專利文獻1:日本專利公開第2001-49469號公報)。Conventionally, a technique of performing plasma treatment on a thin film is known (Patent Document 1: Japanese Patent Publication No. 2001-49469).

若對薄膜進行電漿處理,通常會加熱薄膜。若加熱薄膜,則有產生尺寸變化、薄膜變形的可能性。舉例而言,樹脂薄膜若經加熱,則有收縮之情形。於是,就冷卻薄膜以抑制變形的觀點而言,有在使薄膜接觸冷卻輥的狀態下進行電漿處理的情形。Plasma treatment of the film usually heats the film. If the film is heated, there is a possibility of dimensional change and film deformation. For example, if the resin film is heated, it may shrink. Therefore, from the viewpoint of cooling the film to suppress deformation, there is a case where plasma treatment is performed with the film in contact with the cooling roller.

在僅對薄膜的單面施行電漿處理的情況下,通常使用1個冷卻輥。然而在對薄膜的兩面施行電漿處理的情況下,以往,需要使用多個冷卻輥。具體而言,在使薄膜的一表面接觸一冷卻輥的狀態下,對薄膜的另一表面進行電漿處理,之後,在使薄膜的另一表面接觸另一冷卻輥的狀態下,對薄膜的一表面進行電漿處理,藉此達成薄膜兩面的電漿處理。When plasma treatment is applied to only one side of the film, one cooling roll is usually used. However, in the case of performing plasma treatment on both sides of the film, in the past, it was necessary to use a plurality of cooling rollers. Specifically, in a state where one surface of the film is in contact with a cooling roller, plasma treatment is performed on the other surface of the film, and then in a state in which the other surface of the film is in contact with another cooling roller, Plasma treatment is performed on one surface, thereby achieving plasma treatment on both sides of the film.

如此,在使用「在薄膜的一表面施行電漿處理時使用的冷卻輥,以及在薄膜的另一表面施行電漿處理時使用的冷卻輥」這樣的多個冷卻輥之以往的方法中,設備有大型化的傾向。舉具體例而言,若使用多個冷卻輥,則冷卻輥自身的設置空間要求變寬廣。並且,需要設置多個用以供給冷媒予冷卻輥的裝置,以及用以驅動冷卻輥的裝置,僅就此等之裝置,設備即大型化。In this way, in the conventional method using a plurality of cooling rollers such as "a cooling roller used when performing plasma treatment on one surface of the film and a cooling roller used when performing plasma treatment on the other surface of the film" There is a tendency to enlarge. As a specific example, if a plurality of cooling rollers are used, the installation space requirements of the cooling rollers themselves become wider. In addition, it is necessary to provide a plurality of devices for supplying refrigerant to the cooling rollers and devices for driving the cooling rollers. With only these devices, the equipment becomes larger.

再者,在使用多個冷卻輥之以往的方法中,處理條件的控制有變複雜的傾向。舉具體例而言,若使用多個的冷卻輥,則通常需要用以使各個冷卻輥上運送的薄膜的運送速度一致之運送控制。然而,用以使運送速度一致之控制複雜,期望予以簡化。Furthermore, in the conventional method using a plurality of cooling rollers, the control of the processing conditions tends to become complicated. As a specific example, if a plurality of cooling rollers are used, transport control is generally required to make the transport speed of the film transported on each cooling roller uniform. However, the control to make the transportation speed uniform is complicated, and it is expected to be simplified.

並且,一般在電漿處理中,需要進行處理環境的控制。於是,一般將冷卻輥收納於外殼內,在此外殼內進行處理環境的控制,同時進行電漿處理。因此,在使用多個冷卻輥的情況下,通常準備多個外殼,在此等外殼中,各自進行處理環境的控制。在此情況下,因在每個外殼進行環境氣體的供給及排氣,故排風量時而增大,外殼內的壓力之調整時而困難。因此,舉例而言,即使欲在薄膜的兩面以同一條件進行電漿處理,仍難以將兩面的處理條件控制成相同。In addition, in plasma processing, it is necessary to control the processing environment. Therefore, the cooling roller is generally housed in a casing, and the plasma processing is performed while controlling the processing environment in the casing. Therefore, when a plurality of cooling rollers are used, usually a plurality of casings are prepared, and in these casings, the processing environment is controlled individually. In this case, since the supply and exhaust of ambient air are performed for each housing, the amount of exhaust air increases from time to time, and it is difficult to adjust the pressure in the housing. Therefore, for example, even if plasma treatment is to be performed on both sides of the film under the same conditions, it is still difficult to control the processing conditions on both sides to be the same.

本發明係鑒於前述課題而發想者,其目的在於提供:一種電漿處理裝置,其能在薄膜的兩面施行電漿處理,且能使設備小型化及使控制簡化;以及一種表面處理薄膜的製造方法,其使用前述電漿處理裝置而可製造在兩面施行電漿處理的表面處理薄膜。The present invention was conceived in view of the foregoing problems, and its object is to provide: a plasma processing apparatus that can perform plasma processing on both sides of a film, and can miniaturize equipment and simplify control; and a surface treatment film A manufacturing method that can manufacture a surface-treated thin film that is subjected to plasma treatment on both sides using the aforementioned plasma processing apparatus.

〔1〕一種電漿處理裝置,其具備能對薄膜施行電漿處理的電漿處理部,與能將從前述電漿處理部送出的前述薄膜反轉並送回前述電漿處理部的反轉部; 前述電漿處理部具備冷卻輥與多個電極,前述冷卻輥具有送出至前述反轉部的前述薄膜及從前述反轉部送回的前述薄膜能接觸之圓周表面,且設置成能調整溫度,前述多個電極設置面對於前述冷卻輥的圓周表面; 前述多個電極包含第一電極及第二電極; 前述第一電極以送出至前述反轉部的前述薄膜在接觸前述冷卻輥的圓周表面的狀態下,通過前述第一電極與前述冷卻輥之間運送的方式設置; 前述第二電極以從前述反轉部送回的前述薄膜在接觸前述冷卻輥的圓周表面的狀態下,通過前述第二電極與前述冷卻輥之間運送的方式設置。[1] A plasma processing apparatus including a plasma processing section capable of performing plasma processing on a thin film, and an inversion capable of reversing the thin film sent from the plasma processing section and returning it to the plasma processing section The plasma processing section includes a cooling roller and a plurality of electrodes, and the cooling roller has a circumferential surface that the film sent to the reversing section and the film returned from the reversing section can contact, and is provided to be adjustable Temperature, the plurality of electrode installation surfaces face the circumferential surface of the cooling roller; the plurality of electrodes include a first electrode and a second electrode; the first electrode contacts the circumference of the cooling roller with the film sent to the reversing portion In the state of the surface, it is provided by being transported between the first electrode and the cooling roller; the second electrode passes through the film while the film returned from the reversing portion contacts the circumferential surface of the cooling roller The second electrode is provided so as to be transported between the aforementioned cooling rollers.

[2]如[1]所記載之電漿處理裝置,其中在使前述多個電極包含的電極之總數為n個的情況下,相鄰之前述電極的組合相對於前述冷卻輥的中心軸所成之中心角,皆為0.8×(360°/n)以上。[2] The plasma processing apparatus according to [1], wherein when the total number of electrodes included in the plurality of electrodes is n, the combination of adjacent electrodes is located relative to the central axis of the cooling roller The center angles of the successes are all above 0.8 × (360 ° / n).

[3]如[1]或[2]所記載之電漿處理裝置,其中前述多個電極包含的電極之總數為12個以下。[3] The plasma processing apparatus according to [1] or [2], wherein the total number of electrodes included in the plurality of electrodes is 12 or less.

[4]一種表面處理薄膜的製造方法,其係使用如[1]~[3]中任一項所記載之電漿處理裝置的表面處理薄膜的製造方法;其包含: 將具有第一表面及第二表面之對象薄膜供給至前述電漿處理部之工序、 以在使前述對象薄膜的第一表面接觸前述冷卻輥的圓周表面的狀態下,將前述對象薄膜通過前述第一電極與前述冷卻輥之間的方式運送,同時在前述對象薄膜的第二表面施行電漿處理之工序、 將前述對象薄膜從前述電漿處理部送出至前述反轉部之工序、 將前述對象薄膜在前述反轉部中反轉之工序、 將前述對象薄膜從前述反轉部送回至前述電漿處理部之工序,與 以在使前述對象薄膜的第二表面接觸前述冷卻輥的圓周表面的狀態下,將前述對象薄膜通過前述第二電極與前述冷卻輥之間的方式運送,同時在前述對象薄膜的第一表面施行電漿處理之工序。[4] A method for manufacturing a surface-treated film, which is a method for manufacturing a surface-treated film using the plasma processing apparatus as described in any one of [1] to [3]; it includes: a first surface and The step of supplying the target film on the second surface to the plasma processing section so that the target film passes through the first electrode and the cooling roller in a state where the first surface of the target film contacts the circumferential surface of the cooling roller The process of transporting between the two, while performing the plasma treatment process on the second surface of the target film, the process of sending the target film from the plasma processing part to the reversal part, the object film in the reversal part The process of intermediate reversal, the process of returning the target film from the reversal section to the plasma treatment section, and the state in which the second surface of the target film is in contact with the circumferential surface of the cooling roller The target film is transported between the second electrode and the cooling roller, and a plasma treatment process is performed on the first surface of the target film

根據本發明,可提供:一種電漿處理裝置,其能在薄膜的兩面施行電漿處理,且能使設備小型化及使控制簡化;以及一種表面處理薄膜的製造方法,其使用前述電漿處理裝置而可製造在兩面施行電漿處理的表面處理薄膜。According to the present invention, there can be provided: a plasma processing apparatus that can perform plasma processing on both sides of a film, and can miniaturize equipment and simplify control; and a method of manufacturing a surface-treated film that uses the foregoing plasma processing The device can be used to produce surface-treated films that are plasma-treated on both sides.

以下揭示實施形態及示例物以詳細說明本發明。惟本發明並非限定於以下所揭示之實施形態及示例物者,在未脫離申請範圍及其均等範圍之範圍中得任意變更並實施。The embodiments and examples are disclosed below to explain the present invention in detail. However, the present invention is not limited to the embodiments and examples disclosed below, and can be arbitrarily changed and implemented without departing from the scope of the application and its equivalent.

在以下之說明中,除非另有規定,否則所謂「上游」及「下游」,表示在薄膜運送方向上之上游及下游。In the following description, unless otherwise specified, the so-called "upstream" and "downstream" mean upstream and downstream in the direction of film transport.

圖1係有關本發明之一實施形態之電漿處理裝置10的前視示意圖。如圖1所示,有關本發明之一實施形態的電漿處理裝置10,具備電漿處理部100及反轉部200。FIG. 1 is a schematic front view of a plasma processing apparatus 10 according to an embodiment of the present invention. As shown in FIG. 1, a plasma processing apparatus 10 according to an embodiment of the present invention includes a plasma processing unit 100 and a reversing unit 200.

電漿處理部100設置成能對具有第一表面20F及第二表面20S的薄膜20施行電漿處理,並具備:外殼110;冷卻輥120;多個電極131、132、133、141、142及143;以及壓輥151、152、161及162。於此,所謂薄膜20的第一表面20F,係指薄膜20的正面及反面之一者,而所謂薄膜20的第二表面20S,係指薄膜20的正面及反面之另一者。將薄膜20的正面及反面之何者定為第一表面20F、何者定為第二表面20S,得任意設定。The plasma processing section 100 is provided to be capable of performing plasma processing on the film 20 having the first surface 20F and the second surface 20S, and includes: a housing 110; a cooling roller 120; a plurality of electrodes 131, 132, 133, 141, 142 and 143; and pressure rollers 151, 152, 161 and 162. Here, the first surface 20F of the film 20 refers to one of the front surface and the reverse surface of the film 20, and the second surface 20S of the film 20 refers to the other of the front surface and the reverse surface of the film 20. It can be arbitrarily set which of the front surface and the back surface of the film 20 is designated as the first surface 20F and which is designated as the second surface 20S.

外殼110係將用以對薄膜20施行電漿處理的隔間自外部劃分之箱體。冷卻輥120;電極131、132、133、141、142及143;以及壓輥151、152、161及162;收納於此外殼110內。The housing 110 is a box that divides the compartment for plasma treatment of the film 20 from the outside. Cooling roller 120; electrodes 131, 132, 133, 141, 142, and 143; and pressing rollers 151, 152, 161, and 162; housed in this housing 110.

於外殼110形成有用以進行薄膜20的送入及送出的出入口。並且,於外殼110形成有電漿處理用之環境氣體的送入口(圖示省略)及排出口(圖示省略)。外殼110以可將從未圖示之氣體供給裝置供給之環境氣體通過送入口送入、通過排出口排出之方式設置。The housing 110 is formed with an inlet and outlet for carrying in and out of the film 20. In addition, an inlet (not shown) and an outlet (not shown) of the ambient gas for plasma processing are formed in the housing 110. The housing 110 is provided in such a manner that ambient air supplied from a gas supply device not shown can be fed through the inlet and discharged through the outlet.

冷卻輥120設置成能以與薄膜20的運送方向相同方向,沿圓周方向旋轉。此冷卻輥120設置作為用以在施行電漿處理的期間支撐薄膜20的支撐體。因此,冷卻輥120具有送出至反轉部200的薄膜20及從反轉部200送回的薄膜20能接觸之圓周表面120P。所謂前述「送出至反轉部200的薄膜20」,係指在薄膜20的運送路線中較反轉部200位於上游的薄膜20。並且,前述「從反轉部200送回的薄膜20」,係指在薄膜20的運送路線中較反轉部200位於下游的薄膜20。The cooling roller 120 is provided so as to be able to rotate in the circumferential direction in the same direction as the transport direction of the film 20. This cooling roller 120 is provided as a support for supporting the film 20 during the plasma treatment. Therefore, the cooling roller 120 has the circumferential surface 120P that the film 20 sent out to the reversing section 200 and the film 20 sent back from the reversing section 200 can contact. The aforementioned “film 20 sent to the reversing section 200” refers to the film 20 that is located upstream of the reversing section 200 in the transport path of the film 20. In addition, the "film 20 sent back from the reversing unit 200" refers to the film 20 located downstream of the reversing unit 200 in the transport path of the film 20.

通常,冷卻輥120為了可發揮作為用以使電漿產生之輥電極的功能,以包含金屬等導電性材料的方式形成。舉例而言,冷卻輥120亦可係由導電性材料所形成的輥。並且,舉例而言,冷卻輥120亦可係在由導電性材料所形成的輥本體上被覆玻璃、陶瓷等介電體的輥。冷卻輥120通常接地,並以可在電極131、132、133、141、142及143之間形成電漿放電領域的方式設置。In general, the cooling roller 120 is formed to include a conductive material such as metal in order to function as a roller electrode for generating plasma. For example, the cooling roller 120 may be a roller formed of a conductive material. In addition, for example, the cooling roller 120 may be a roller in which a dielectric body such as glass or ceramic is coated on a roller body formed of a conductive material. The cooling roller 120 is generally grounded, and is provided in such a manner that a plasma discharge area can be formed between the electrodes 131, 132, 133, 141, 142, and 143.

冷卻輥120設置成能調整溫度。更詳細而言,冷卻輥120,為了即使在電漿處理時產生熱,仍可抑制其熱所致之薄膜20的升溫,而設置成能夠冷卻。通常,冷卻輥120內設置有能使水等冷媒流通的流徑(圖示省略)。而且,藉由從未圖示的冷媒供給裝置所供給之冷媒流通前述流徑,冷卻輥120以可調整冷卻輥120的溫度的方式設置。The cooling roller 120 is provided to adjust the temperature. In more detail, the cooling roller 120 is provided to be capable of cooling in order to suppress the temperature rise of the film 20 due to the heat even if heat is generated during plasma processing. Generally, the cooling roller 120 is provided with a flow path (not shown) through which a refrigerant such as water can flow. Moreover, the cooling roller 120 is installed so that the temperature of the cooling roller 120 can be adjusted by the refrigerant supplied from a refrigerant supply device not shown flowing through the aforementioned flow path.

電極131、132、133、141、142及143設置面對於冷卻輥120之圓周表面120P。通常,此等之電極131、132、133、141、142及143,設置作為在平行於冷卻輥120的軸方向延伸之電極。並且,此等之電極131、132、133、141、142及143,通常以距冷卻輥120的圓周表面120P的距離呈相同的方式設置。再者,作為電極131、132、133、141、142及143,通常使用同材料、同尺寸、同形狀者。The electrodes 131, 132, 133, 141, 142, and 143 are disposed so as to face the circumferential surface 120P of the cooling roller 120. Generally, these electrodes 131, 132, 133, 141, 142, and 143 are provided as electrodes extending parallel to the axis direction of the cooling roller 120. In addition, the electrodes 131, 132, 133, 141, 142, and 143 are generally provided at the same distance from the circumferential surface 120P of the cooling roller 120. In addition, as the electrodes 131, 132, 133, 141, 142, and 143, those having the same material, the same size, and the same shape are generally used.

前述多個電極131、132、133、141、142及143,包含用以對薄膜20的兩表面20F及20S中之一者施行電漿處理的第一電極與用以對另一者施行電漿處理的第二電極。在本實施形態中,電極131、132及133被分類為第一電極,電極141、142及143被分類為第二電極。第一電極131、132及133,以送出至反轉部200的薄膜20通過此等第一電極131、132及133與冷卻輥120之間而運送的方式設置。並且,第二電極141、142及143,以從反轉部200送回的薄膜20通過此等第二電極141、142及143與冷卻輥120之間而運送的方式設置。The aforementioned plurality of electrodes 131, 132, 133, 141, 142, and 143 include a first electrode for performing plasma treatment on one of the two surfaces 20F and 20S of the thin film 20 and a plasma for applying the plasma to the other Treated second electrode. In this embodiment, the electrodes 131, 132, and 133 are classified as the first electrodes, and the electrodes 141, 142, and 143 are classified as the second electrodes. The first electrodes 131, 132, and 133 are provided so that the film 20 sent to the reversing section 200 is transported between the first electrodes 131, 132, and 133 and the cooling roller 120. In addition, the second electrodes 141, 142, and 143 are provided in such a manner that the film 20 returned from the reversing section 200 is transported between the second electrodes 141, 142, and 143 and the cooling roller 120.

在對於薄膜20的兩表面20F及20S以相同條件施行電漿處理的觀點上,第一電極131、132及133的數量與第二電極141、142及143的數量,以定為相同為佳。並且,在與前述相同的觀點上,第一電極131、132及133的位置與第二電極141、142及143的位置,以相對於冷卻輥120的中心軸120C為對稱為佳。於此,所謂「相對於冷卻輥120的中心軸120C為對稱」,係指在垂直於冷卻輥120的中心軸的剖面中,將冷卻輥120的中心軸120C作為對稱中心為點對稱。From the viewpoint of performing plasma treatment on both surfaces 20F and 20S of the thin film 20 under the same conditions, the number of the first electrodes 131, 132, and 133 and the number of the second electrodes 141, 142, and 143 are preferably the same. From the same viewpoint as above, the positions of the first electrodes 131, 132, and 133 and the positions of the second electrodes 141, 142, and 143 are preferably relative to the central axis 120C of the cooling roller 120. Here, "symmetrical with respect to the central axis 120C of the cooling roller 120" means that the cross-section perpendicular to the central axis of the cooling roller 120 is point-symmetric with the central axis 120C of the cooling roller 120 as the center of symmetry.

由於需要具有第一電極及第二電極分別至少1個,故電漿處理部100所具備的電極131、132、133、141、142及143的數量通常為2個以上。另一方面,在使維護容易的觀點上,電極131、132、133、141、142及143的數量以12個以下為佳。Since it is necessary to have at least one of the first electrode and the second electrode, the number of electrodes 131, 132, 133, 141, 142, and 143 provided in the plasma processing section 100 is usually two or more. On the other hand, from the viewpoint of facilitating maintenance, the number of electrodes 131, 132, 133, 141, 142, and 143 is preferably 12 or less.

在電極131、132、133、141、142及143的總數作為n個的情況下,相鄰之電極的組合相對於冷卻輥120的中心軸120C所成之中心角θ,皆以落在指定的範圍內為佳。惟此中心角θ為0<θ≦180°。於此,所謂相鄰之電極的組合,可舉出例如:電極131與電極132的組合、電極131與電極143的組合等。並且,所謂「相鄰之電極的組合相對於冷卻輥120的中心軸120C所成之中心角θ」,係指「在垂直於冷卻輥120的中心軸120C的剖面中,冷卻輥120的中心軸120C與相鄰的電極各自的中心所連結的兩條線所成之角」。在以下的說明中,有時將此中心角θ稱為「電極間中心角θ」。在圖1中,將冷卻輥120的中心軸120C與電極131的中心131C連結的線L1,和冷卻輥120的中心軸120C與前述電極131相鄰的電極132的中心132C連結的線L2所成之角,揭示作為前述電極間中心角θ的例子。When the total number of electrodes 131, 132, 133, 141, 142, and 143 is n, the central angle θ formed by the combination of adjacent electrodes with respect to the central axis 120C of the cooling roller 120 falls within the specified Within the range is better. However, the central angle θ is 0 <θ ≦ 180 °. Here, the combination of adjacent electrodes includes, for example, a combination of the electrode 131 and the electrode 132, a combination of the electrode 131 and the electrode 143, and the like. Also, the "center angle θ formed by the combination of adjacent electrodes with respect to the central axis 120C of the cooling roller 120" means "in a cross section perpendicular to the central axis 120C of the cooling roller 120, the central axis of the cooling roller 120 The angle formed by 120C and the two lines connecting the centers of adjacent electrodes. " In the following description, this central angle θ may be referred to as "inter-electrode central angle θ". In FIG. 1, a line L1 connecting the center axis 120C of the cooling roller 120 and the center 131C of the electrode 131 and a line L2 connecting the center axis 120C of the cooling roller 120 and the center 132C of the electrode 132 adjacent to the electrode 131 are formed The angle is disclosed as an example of the aforementioned central angle θ between the electrodes.

電極間中心角θ,具體而言,以「0.8×(360°/n)」以上為佳,以「0.9×(360°/n)」以上為更佳。其中,電極間中心角θ以對於相鄰任一電極之組合皆相同為尤佳,因此,前述電極間中心角θ以「1.0×(360°/n)」為尤佳。藉此,可抑制電極131、132、133、141、142及143每一者之電漿處理溫度的偏差。Specifically, the center angle θ between the electrodes is specifically “0.8 × (360 ° / n)” or more, and more preferably “0.9 × (360 ° / n)” or more. Among them, the center angle θ between the electrodes is preferably the same for any combination of adjacent electrodes. Therefore, the center angle θ between the electrodes is preferably “1.0 × (360 ° / n)”. Thereby, the deviation of the plasma processing temperature of each of the electrodes 131, 132, 133, 141, 142, and 143 can be suppressed.

壓輥151、152、161及162,設置成能在與薄膜20的運送方向相同的方向上沿圓周方向旋轉。並且,壓輥151、152、161及162,以其中心軸(圖示省略)在冷卻輥120的軸方向延伸的方式設置。The pressure rollers 151, 152, 161, and 162 are provided to be able to rotate in the circumferential direction in the same direction as the transport direction of the film 20. In addition, the pressure rollers 151, 152, 161, and 162 are provided so that their central axes (not shown) extend in the axial direction of the cooling roller 120.

壓輥151、152、161及162,設置成能藉由壓住薄膜20,在施行電漿處理的期間,使薄膜20接觸冷卻輥120的圓周表面120P。具體而言,壓輥151及152,以「藉由用該壓輥151及152壓住薄膜20,可使通過第一電極131、132及133與冷卻輥120之間運送的薄膜20,呈接觸冷卻輥120的圓周表面120P的狀態」的方式設置,壓輥161及162,以「藉由用該壓輥161及162壓住薄膜20,可使通過第一電極141、142及143與冷卻輥120之間運送的薄膜20,呈接觸冷卻輥120的圓周表面120P的狀態」的方式設置。The pressure rollers 151, 152, 161, and 162 are arranged so that the film 20 can be pressed to contact the circumferential surface 120P of the cooling roller 120 during the plasma treatment. Specifically, the pressing rollers 151 and 152 can “make the film 20 transported between the first electrodes 131, 132 and 133 and the cooling roller 120 come into contact by pressing the film 20 with the pressing rollers 151 and 152 The state of the circumferential surface 120P of the cooling roller 120 is set in such a manner that the pressing rollers 161 and 162 can “pass the first electrode 141, 142 and 143 and the cooling roller by pressing the film 20 with the pressing rollers 161 and 162” The film 20 transported between 120 is provided so as to contact the circumferential surface 120P of the cooling roller 120.

反轉部200設置成能將從電漿處理部100送出之薄膜20反轉,並送回電漿處理部100。於此,所謂將薄膜20「反轉」,係指使以冷卻輥120作為基準之薄膜20的第一表面20F及第二表面20S的位置關係倒轉。The reversing section 200 is provided so that the film 20 sent from the plasma processing section 100 can be reversed and sent back to the plasma processing section 100. Here, “reversing” the film 20 refers to inverting the positional relationship between the first surface 20F and the second surface 20S of the film 20 using the cooling roller 120 as a reference.

圖2係有關本發明之一實施形態之電漿處理裝置10的反轉部200所具備之薄膜反轉裝置210的立體示意圖。並且,在圖2中,為了使薄膜20的第一表面20F與第二表面20S容易區別,在第二表面20S附有斜線表示。2 is a schematic perspective view of a film reversing device 210 included in the reversing section 200 of the plasma processing apparatus 10 according to an embodiment of the present invention. In addition, in FIG. 2, in order to easily distinguish the first surface 20F and the second surface 20S of the thin film 20, the second surface 20S is indicated by diagonal lines.

如圖2所示,反轉部200具備具多個轉向棒211、212及213之薄膜反轉裝置210。轉向棒211、212及213係可將所運送的薄膜20折返之部件。薄膜反轉裝置210,設置成能藉由組合前述轉向棒211、212及213所致之折返,將薄膜20反轉。作為如此的薄膜反轉裝置210,舉例而言,得使用Bellmatic公司製的交叉倒轉裝置(Cross Inverter)等。惟使用於反轉部200使薄膜20反轉的機構並無限制,亦可藉由前述薄膜反轉裝置210以外的機構實現薄膜20的反轉。As shown in FIG. 2, the reversing unit 200 includes a film reversing device 210 having a plurality of steering bars 211, 212 and 213. The steering rods 211, 212, and 213 are components that can fold back the transported film 20. The film reversing device 210 is provided so that the film 20 can be reversed by combining the turning back caused by the aforementioned steering rods 211, 212, and 213. As such a film inverting device 210, for example, a cross-inverting device (Cross Inverter) manufactured by Bellmatic Corporation or the like can be used. However, the mechanism used for the reversing section 200 to reverse the film 20 is not limited, and the reversal of the film 20 may be realized by a mechanism other than the film reversing device 210 described above.

有關本發明之一實施形態之電漿處理裝置10,係如以上所述而設置。若使用此電漿處理裝置10,則可製造對第一表面及第二表面兩者施行電漿處理之表面處理薄膜。以下說明其製造方法。並且,在以下的說明中,為了與表面處理薄膜區別,有時將對第一表面及第二表面兩者施行電漿處理前之薄膜稱為「對象薄膜」。The plasma processing apparatus 10 according to an embodiment of the present invention is provided as described above. If this plasma processing apparatus 10 is used, it is possible to manufacture a surface-treated film that performs plasma processing on both the first surface and the second surface. The manufacturing method will be described below. In addition, in the following description, in order to distinguish it from a surface-treated film, a film before plasma treatment is applied to both the first surface and the second surface may be referred to as an “object film”.

如圖1所示,在使用上述電漿處理裝置10之表面處理薄膜的製造方法中,準備具有第一表面20F及第二表面20S的對象薄膜20。作為對象薄膜20,通常使用長條狀的薄膜。於此,所謂「長條狀」的薄膜20,係指相對於幅寬通常具有5倍以上的長度之薄膜,以具有10倍或者其以上的長度為佳,具體而言,係指具有以輥狀捲取儲存或搬運的程度之長度的薄膜。長度的上限,並無特別限制,舉例而言,得相對於幅寬為10萬倍以下。並且,作為對象薄膜20,通常,使用樹脂薄膜。As shown in FIG. 1, in the method of manufacturing a surface-treated film using the plasma processing apparatus 10 described above, a target film 20 having a first surface 20F and a second surface 20S is prepared. As the target film 20, a long film is generally used. Here, the so-called "strip-shaped" film 20 refers to a film that generally has a length of 5 times or more relative to the width, and preferably has a length of 10 times or more. Take up the length of the film for storage or handling. The upper limit of the length is not particularly limited. For example, the width should be 100,000 times or less relative to the width. In addition, as the target film 20, a resin film is generally used.

作為樹脂薄膜所包含的樹脂,可舉出例如:苯乙烯樹脂;丙烯酸樹脂;甲基丙烯酸樹脂;含鹵樹脂;聚乙烯、聚丙烯等烯烴樹脂;具有脂環結構的樹脂;聚碳酸酯樹脂;聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯等聚酯樹脂;聚醯胺樹脂;熱塑性聚胺酯樹脂;聚醚碸、聚碸等聚碸樹脂;2,6-二甲苯酚的聚合物等聚苯醚樹脂;纖維素酯類、纖維素胺甲酸酯類、纖維素醚類等纖維素衍生物;聚二甲基矽氧烷、聚甲基苯基矽氧烷等矽氧樹脂;等。Examples of the resin contained in the resin film include: styrene resin; acrylic resin; methacrylic resin; halogen-containing resin; olefin resin such as polyethylene and polypropylene; resin having an alicyclic structure; polycarbonate resin; Polyester resins such as polyethylene terephthalate and polyethylene naphthalate; polyamide resins; thermoplastic polyurethane resins; polyether resins such as polyether and polybenzaldehyde; polymerization of 2,6-xylenol Polyphenylene ether resins such as cellulose; cellulose esters, cellulose carbamates, cellulose ethers and other cellulose derivatives; polydimethylsiloxane, polymethylphenylsiloxane and other silicone resins; Wait.

在準備對象薄膜20後,進行將此對象薄膜20供給至電漿處理部100之工序。所供給的對象薄膜20,進入外殼110內,並經過壓輥151而接觸冷卻輥120。然後,對象薄膜20,係在藉由受壓輥151及152壓住,而使對象薄膜20的第一表面20F加強接觸冷卻輥120的圓周表面120P的狀態下運送。After preparing the target film 20, a process of supplying the target film 20 to the plasma processing section 100 is performed. The supplied target film 20 enters the casing 110 and passes through the pressing roller 151 to contact the cooling roller 120. Then, the object film 20 is conveyed in a state where the first surface 20F of the object film 20 is brought into contact with the circumferential surface 120P of the cooling roller 120 by being pressed by the pressure rollers 151 and 152.

在使對象薄膜20的第一表面20F接觸冷卻輥120的圓周表面120P的狀態下,將對象薄膜20以通過第一電極131、132及133與冷卻輥120之間的方式運送,同時進行對對象薄膜20的第二表面20S施行電漿處理之工序。於外殼110內,透過未圖示的送入口供給適切的種類及量的環境氣體。並且,所供給的環境氣體,流通外殼110內後,透過未圖示的排出口排出。在如此的狀態下,藉由未圖示的電源於第一電極131、132及133與作為輥電極的冷卻輥120之間施加電壓。藉由此電壓,第一電極131、132及133與冷卻輥120之間產生電漿。然後,藉由此電漿,進行對於作為與冷卻輥120相反側之對象薄膜20之表面的第二表面20S之電漿處理。此時,環境氣體的種類及量,以及,施加的電壓大小,得視對象薄膜20的材質,及藉由電漿處理欲賦予對象薄膜20的性質而設定。While the first surface 20F of the target film 20 is in contact with the circumferential surface 120P of the cooling roller 120, the target film 20 is transported so as to pass between the first electrodes 131, 132, and 133 and the cooling roller 120 while aligning the object The second surface 20S of the film 20 is subjected to a plasma treatment process. Within the housing 110, a suitable type and amount of ambient gas is supplied through an inlet (not shown). In addition, the supplied ambient gas flows through the housing 110 and is discharged through a discharge port (not shown). In such a state, a voltage is applied between the first electrodes 131, 132, and 133 and the cooling roller 120 as a roller electrode by a power source not shown. With this voltage, plasma is generated between the first electrodes 131, 132, and 133 and the cooling roller 120. Then, by this plasma, a plasma treatment is performed on the second surface 20S which is the surface of the target film 20 on the opposite side to the cooling roller 120. At this time, the type and amount of the ambient gas and the magnitude of the applied voltage depend on the material of the target thin film 20 and the properties to be given to the target thin film 20 by plasma treatment.

在對第二表面20S施行電漿處理後,進行將對象薄膜20從電漿處理部100送出至反轉部200之工序。具體而言,對第二表面20S已施行電漿處理之對象薄膜20,經過壓輥152,往外殼110的外部前進,送往反轉部200。After the plasma treatment is performed on the second surface 20S, the process of sending the target thin film 20 from the plasma treatment section 100 to the reversing section 200 is performed. Specifically, the film 20 to which the plasma treatment has been applied to the second surface 20S passes through the pressing roller 152 and advances to the outside of the housing 110 and is sent to the reversing section 200.

之後,進行將送達之對象薄膜20,在反轉部200中反轉之工序。在本實施形態中,如圖2所示,藉由多個轉向棒211、212及213所致之折返,反轉對象薄膜20。藉由如此的反轉,對象薄膜20的狀態,從以第一表面20F可接觸冷卻輥120的圓周表面120P的狀態,變化為以第二表面20S可接觸冷卻輥120的圓周表面120P的狀態。After that, a process of inverting the delivered film 20 in the inversion unit 200 is performed. In the present embodiment, as shown in FIG. 2, the target film 20 is reversed by turning back due to the plurality of steering bars 211, 212 and 213. By such a reversal, the state of the target film 20 changes from the state where the first surface 20F can contact the circumferential surface 120P of the cooling roller 120 to the state where the second surface 20S can contact the circumferential surface 120P of the cooling roller 120.

在反轉後,如圖1所示,進行將對象薄膜20從反轉部200送回至電漿處理部100之工序。送回至電漿處理部100的對象薄膜20,進入外殼110內,經過壓輥161而接觸冷卻輥120。然後,對象薄膜20,係在藉由受壓輥161及162壓住,而使對象薄膜20的第二表面20S加強接觸冷卻輥120的圓周表面120P的狀態下運送。After the reversal, as shown in FIG. 1, a process of returning the target film 20 from the reversal unit 200 to the plasma processing unit 100 is performed. The target film 20 sent back to the plasma processing section 100 enters the casing 110, passes through the pressing roller 161, and contacts the cooling roller 120. Then, the target film 20 is conveyed in a state where the second surface 20S of the target film 20 is brought into contact with the circumferential surface 120P of the cooling roller 120 by being pressed by the pressure rollers 161 and 162.

在使對象薄膜20的第二表面20S接觸冷卻輥120的圓周表面120P的狀態下,將對象薄膜20以通過第二電極141、142及143與冷卻輥120之間的方式運送的同時,進行對對象薄膜20的第一表面20F施行電漿處理之工序。如前所述,於外殼110內,流通適切的種類及量的環境氣體。在如此的狀態下,藉由未圖示的電源在第二電極141、142及143與作為輥電極的冷卻輥120之間施加電壓,藉此以與對於第二表面20S之電漿處理相同要領,進行對於對象薄膜20的第一表面20F之電漿處理。然後,藉此,進行對象薄膜20的第一表面20F及第二表面20S兩者之電漿處理,得到表面處理薄膜20。While the second surface 20S of the target film 20 is in contact with the circumferential surface 120P of the cooling roller 120, the target film 20 is transported while passing between the second electrodes 141, 142, and 143 and the cooling roller 120. The plasma processing is performed on the first surface 20F of the target film 20. As described above, appropriate types and amounts of ambient gas flow through the housing 110. In such a state, a voltage is applied between the second electrodes 141, 142, and 143 and the cooling roller 120 as a roller electrode by a power source not shown, thereby performing the same procedure as the plasma treatment for the second surface 20S , Plasma treatment is performed on the first surface 20F of the target film 20. Then, by this, plasma treatment of both the first surface 20F and the second surface 20S of the target film 20 is performed to obtain the surface-treated film 20.

如此得到的表面處理薄膜20,從電漿處理部100送出,藉由適切的回收裝置(圖示省略)回收。於得到的表面處理薄膜20的第一表面20F及第二表面20S,藉由電漿處理生成官能基,而提高其接合性。The surface-treated thin film 20 obtained in this way is sent out from the plasma processing unit 100 and recovered by a suitable recycling device (not shown). On the first surface 20F and the second surface 20S of the obtained surface-treated thin film 20, functional groups are generated by plasma treatment to improve the adhesion.

在有關上述實施形態之電漿處理裝置10中,由於在對於第一表面20F之電漿處理與對於第二表面20S之電漿處理中使用共同的冷卻輥120,故能使設備小型化。舉例而言,由於僅使用1個冷卻輥120,故可減小冷卻輥120自身的設置空間、小型化用以提供冷媒至冷卻輥120之冷卻系統、簡化用以施加電壓之電源系統、減少用以旋轉驅動冷卻輥120之裝置,達成設備的小型化。In the plasma processing apparatus 10 according to the above embodiment, since the common cooling roller 120 is used for the plasma processing for the first surface 20F and the plasma processing for the second surface 20S, the equipment can be miniaturized. For example, since only one cooling roller 120 is used, the installation space of the cooling roller 120 itself can be reduced, the cooling system for supplying refrigerant to the cooling roller 120 can be miniaturized, the power supply system for applying voltage can be simplified, and the number of uses can be reduced. The device for driving the cooling roller 120 by rotation achieves miniaturization of the equipment.

再者,在有關上述實施形態之電漿處理裝置10中,可簡化有關電漿處理之控制。舉例而言,由於在對於第一表面20F之電漿處理與對於第二表面20S之電漿處理中使用共同的冷卻輥120,故不需要用以使不同的冷卻輥上運送的對象薄膜的速度一致之以往方法一般的運送控制。因此,可簡化對象薄膜的運送速度之控制。In addition, in the plasma processing apparatus 10 according to the above-described embodiment, the control related to plasma processing can be simplified. For example, since the common cooling roll 120 is used in the plasma treatment for the first surface 20F and the plasma treatment for the second surface 20S, the speed of the film to be transported on different cooling rolls is not required Consistent conventional methods for general shipping control. Therefore, the control of the transport speed of the target film can be simplified.

並且,在有關上述實施形態之電漿處理裝置10中,可在共同的外殼110內進行對於第一表面20F之電漿處理與對於第二表面20S之電漿處理。因此,可以比使用多個外殼之以往方法還要減少環境氣體的排風量。並且,在有關上述實施形態之電漿處理裝置10中,比起使用多個外殼之以往方法,外殼110內的環境氣體的壓力的控制較為容易。舉例而言,在欲對對象薄膜20的第一表面20F及第二表面20S以相同條件施行電漿處理的情況下,由於即使不進行特別的調整,通常仍可使環境氣體的種類及壓力在兩者的電漿處理中為相同,故易於壓力控制。In addition, in the plasma processing apparatus 10 according to the above embodiment, the plasma processing for the first surface 20F and the plasma processing for the second surface 20S can be performed in the common housing 110. Therefore, it is possible to reduce the amount of ambient air exhausted compared to the conventional method using multiple housings. In addition, in the plasma processing apparatus 10 according to the above embodiment, the pressure of the ambient gas in the housing 110 is easier to control than the conventional method using a plurality of housings. For example, when plasma treatment is to be performed on the first surface 20F and the second surface 20S of the target thin film 20 under the same conditions, even if no special adjustments are made, the type and pressure of the ambient gas can usually be kept at The plasma treatment of the two is the same, so it is easy to control the pressure.

再者,在有關上述實施形態之電漿處理裝置10中,由於藉由冷卻輥120抑制由電漿處理所致之對象薄膜20的升溫,故可抑制由熱所致之對象薄膜20的尺寸變化。此時,由於若適切設定電極131、132、133、141、142及143的電極間中心角θ,可抑制電極131、132、133、141、142及143每一者之電漿處理溫度之偏差,故可均一化電極131、132、133、141、142及143每一者之電漿處理的條件。因此,電漿處理的處理條件之控制變得容易,可輕易得到如同預期之表面處理薄膜20。關於此點,舉例而言,若考慮電極間中心角θ為小的情況即可理解。若電極間中心角θ為小,則對象薄膜20,由於在藉由一電極接受電漿處理而加熱後、藉由冷卻輥120充分冷卻前,藉由下一電極接受電漿處理,故有在接受電漿處理的時間點之溫度比預期還要高的可能性。然而,藉由適切設定電極間中心角θ,可變得易於避免如此之非預期的高溫,並抑制電漿處理溫度的偏差。In addition, in the plasma processing apparatus 10 according to the above-described embodiment, since the temperature rise of the target film 20 due to plasma processing is suppressed by the cooling roller 120, the dimensional change of the target film 20 due to heat can be suppressed . At this time, if the center angle θ between the electrodes 131, 132, 133, 141, 142, and 143 is set appropriately, the deviation of the plasma processing temperature of each of the electrodes 131, 132, 133, 141, 142, and 143 can be suppressed Therefore, the plasma treatment conditions for each of the electrodes 131, 132, 133, 141, 142, and 143 can be normalized. Therefore, the control of the processing conditions of the plasma treatment becomes easy, and the surface-treated film 20 as expected can be easily obtained. Regarding this point, for example, it can be understood by considering that the center angle θ between the electrodes is small. If the center angle θ between the electrodes is small, the target film 20 is subjected to the plasma treatment by the next electrode after being heated by the plasma treatment by one electrode and before being sufficiently cooled by the cooling roller 120. The possibility that the temperature at the time point of receiving plasma treatment is higher than expected. However, by appropriately setting the center angle θ between the electrodes, it becomes easy to avoid such unintended high temperature and suppress the deviation of the plasma processing temperature.

並且,在有關上述實施形態之電漿處理裝置10中,對象薄膜20,受壓輥151、152、161及162壓住。因此,對象薄膜20在通過第一電極131、132及133與冷卻輥120之間的期間,以及通過第二電極141、142及143與冷卻輥120之間的期間,加強接觸冷卻輥120的圓周表面120P。據此,在冷卻輥120與對象薄膜20之間,有大的摩擦力起作用。因此,即使因電漿處理所致之加熱產生使對象薄膜20發生膨脹或收縮的應力,由於前述摩擦力抵抗應力,故可有效抑制對象薄膜20的尺寸變化。Furthermore, in the plasma processing apparatus 10 according to the above embodiment, the target film 20 is pressed by the pressure rollers 151, 152, 161, and 162. Therefore, the object film 20 strengthens contact with the circumference of the cooling roller 120 during the passage between the first electrodes 131, 132, and 133 and the cooling roller 120, and between the second electrodes 141, 142, and 143 and the cooling roller 120. The surface 120P. According to this, a large frictional force acts between the cooling roller 120 and the target film 20. Therefore, even if the stress due to the heating caused by the plasma treatment causes the target film 20 to expand or contract, the frictional force resists the stress, so that the dimensional change of the target film 20 can be effectively suppressed.

再者,在有關上述實施形態之電漿處理裝置10中,由於電極131、132、133、141、142及143之任一者,皆以距冷卻輥120的圓周表面120P相等距離設置,故可均一化依電極131、132、133、141、142及143各個電極之處理條件。因此,可特別容易進行電漿處理的處理條件之控制。Furthermore, in the plasma processing apparatus 10 according to the above embodiment, since any of the electrodes 131, 132, 133, 141, 142, and 143 are provided at equal distances from the circumferential surface 120P of the cooling roller 120, it is possible The uniformity depends on the processing conditions of the electrodes 131, 132, 133, 141, 142, and 143. Therefore, it is particularly easy to control the processing conditions of the plasma treatment.

在上述實施形態中,處理薄膜20的材料、厚度及運送速度;環境氣體的種類及壓力;用於電漿生成之施加電壓的大小;等條件,在可得到期望的表面處理薄膜之範圍中,得任意設定。In the above embodiment, the material, thickness and transport speed of the treatment film 20; the type and pressure of the ambient gas; the magnitude of the applied voltage for plasma generation; and other conditions, within the range where the desired surface treatment film can be obtained, It has to be set arbitrarily.

10‧‧‧電漿處理裝置10‧‧‧Plasma treatment device

20‧‧‧薄膜20‧‧‧film

20F‧‧‧第一表面20F‧‧‧First surface

20S‧‧‧第二表面20S‧‧‧Second surface

100‧‧‧電漿處理部100‧‧‧Plasma Processing Department

110‧‧‧外殼110‧‧‧Housing

120‧‧‧冷卻輥120‧‧‧cooling roller

120P‧‧‧圓周表面120P‧‧‧Circular surface

120C‧‧‧中心軸120C‧‧‧Central axis

131、132、133、141、142及143‧‧‧電極131, 132, 133, 141, 142 and 143

151、152、161及162‧‧‧壓輥151, 152, 161 and 162

200‧‧‧反轉部200‧‧‧Reversal Department

210‧‧‧薄膜反轉裝置210‧‧‧film reversal device

211、212及213‧‧‧轉向棒211, 212 and 213

圖1係有關本發明之一實施形態之電漿處理裝置的前視示意圖。 圖2係有關本發明之一實施形態之電漿處理裝置的反轉部所具備的薄膜反轉裝置之立體示意圖。FIG. 1 is a schematic front view of a plasma processing apparatus according to an embodiment of the present invention. FIG. 2 is a schematic perspective view of a thin film inverting device included in an inverting portion of a plasma processing apparatus according to an embodiment of the present invention.

Claims (4)

一種電漿處理裝置,其具備能對薄膜施行電漿處理的電漿處理部,與能將自該電漿處理部送出的該薄膜反轉並送回該電漿處理部的反轉部;該電漿處理部具備冷卻輥與多個電極,該冷卻輥具有送出至該反轉部的該薄膜及從該反轉部送回的該薄膜能接觸之圓周表面,且設置成能調整溫度,該多個電極設置面對於該冷卻輥的圓周表面;該多個電極包含第一電極及第二電極;該第一電極以送出至該反轉部的該薄膜在接觸該冷卻輥的圓周表面的狀態下,通過該第一電極與該冷卻輥之間運送的方式設置;該第二電極以從該反轉部送回的該薄膜在接觸該冷卻輥的圓周表面的狀態下,通過該第一電極與該冷卻輥之間運送的方式設置。A plasma processing apparatus includes a plasma processing unit that can perform plasma processing on a film, and an inversion unit that can reverse the film sent from the plasma processing unit and return it to the plasma processing unit; The plasma processing section includes a cooling roller and a plurality of electrodes. The cooling roller has a circumferential surface that the film sent out to the reversing section and the film sent back from the reversing section can contact, and is arranged to adjust the temperature. A plurality of electrode installation surfaces face the circumferential surface of the cooling roller; the plurality of electrodes include a first electrode and a second electrode; the first electrode is in a state where the film sent to the reversing portion is in contact with the circumferential surface of the cooling roller The second electrode is provided by being transported between the first electrode and the cooling roller; the second electrode passes through the first electrode in a state where the film sent back from the reversing portion contacts the circumferential surface of the cooling roller The method of transporting with the cooling roller is provided. 如請求項1所述之電漿處理裝置,其中在使該多個電極包含的電極之總數為n個的情況下,相鄰之該電極的組合相對於該冷卻輥的中心軸所成之中心角,皆為0.8×(360°/n)以上。The plasma processing apparatus according to claim 1, wherein when the total number of electrodes included in the plurality of electrodes is n, the center of the combination of adjacent electrodes with respect to the central axis of the cooling roller The angles are all above 0.8 × (360 ° / n). 如請求項1或2所述之電漿處理裝置,其中該多個電極包含的電極之總數為12個以下。The plasma processing apparatus according to claim 1 or 2, wherein the total number of electrodes included in the plurality of electrodes is 12 or less. 一種表面處理薄膜的製造方法,其係使用如請求項1至3中任一項所述之電漿處理裝置的表面處理薄膜的製造方法;其包含:將具有第一表面及第二表面之對象薄膜供給至該電漿處理部之工序;以在使該對象薄膜的第一表面接觸該冷卻輥的圓周表面的狀態下,將該對象薄膜通過該第一電極與該冷卻輥之間的方式運送,同時在該對象薄膜的第二表面施行電漿處理之工序;將該對象薄膜從該電漿處理部送出至該反轉部之工序;將該對象薄膜在該反轉部中反轉之工序;將該對象薄膜從該反轉部送回至該電漿處理部之工序;與以在使該對象薄膜的第二表面接觸該冷卻輥的圓周表面的狀態下,將該對象薄膜通過該第二電極與該冷卻輥之間的方式運送,同時在該對象薄膜的第一表面施行電漿處理之工序。A method for manufacturing a surface-treated film, which is a method for manufacturing a surface-treated film using the plasma processing apparatus according to any one of claims 1 to 3; it includes: an object having a first surface and a second surface The process of supplying the film to the plasma processing section; transporting the target film through the first electrode and the cooling roller in a state where the first surface of the target film contacts the circumferential surface of the cooling roller , The process of performing plasma treatment on the second surface of the target film at the same time; the process of sending the target film from the plasma processing part to the inverting part; the process of inverting the target film in the inverting part The process of returning the target film from the reversing section to the plasma processing section; and in a state where the second surface of the target film is in contact with the circumferential surface of the cooling roller, passing the target film through the first The two electrodes are transported between the cooling roller and the plasma treatment is performed on the first surface of the target film.
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