TW201901806A - 半導體裝置的製作方法 - Google Patents
半導體裝置的製作方法 Download PDFInfo
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- TW201901806A TW201901806A TW106130618A TW106130618A TW201901806A TW 201901806 A TW201901806 A TW 201901806A TW 106130618 A TW106130618 A TW 106130618A TW 106130618 A TW106130618 A TW 106130618A TW 201901806 A TW201901806 A TW 201901806A
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Abstract
本發明實施例提供材料組成與其應用方法,包括提供底漆材料,其包括:表面作用力增進組成以及可交聯組成。在底漆材料上進行交聯製程。可交聯組成自我交聯以形成交聯的底漆材料。在交聯的底漆材料上進行至少一製程時,交聯的底漆材料可保護下方層。
Description
本發明實施例關於製作半導體的方法,更特別關於用於製備基板的目標表面以進行後續製程的材料組成。
電子產業對較小與較快的電子裝置的需求增加,且電子裝置同時提供大量的複雜功能。綜上所述,半導體產業的持續趨勢為製作低成本、高效能、與低能耗的積體電路。藉由縮小半導體的積體電路尺寸(如最小結構尺寸)可達這些遠程目標,進而改良產能與降低相關成本。然而縮小尺寸也會增加積體電路製程的複雜性。為了實現半導體積體電路與裝置單元的持續進展,需要在半導體製程與技術上具有類似進展。
舉例來說,在圖案尺寸縮小時,即將進行製程的表面條件會影響裝置的品質與可信度。此外,對表面進行後續製程如蝕刻、清潔、沉積層狀物於其上時,應依需求維持表面特性以適於後續製程。在一例中,許多製程步驟關於形成薄膜材料於基板或晶圓上及處理薄膜。在形成上述材料時,表面上的缺陷、不規則、與污染可能破壞製程,且可能大幅地影響產率與裝置效能。現有技術仍未完全適用於所有方面。
本發明一實施例提供之半導體裝置的製作方法,包括:提供基板;沉積底漆材料於基板上,其中底漆材料包括: 表面作用力增進組成;以及可交聯組成;對底漆材料進行交聯製程,其中可交聯組成自我交聯以形成交聯的底漆材料;以及在含有交聯的底漆材料於其上的基板上,進行至少一半導體裝置的製程。
100‧‧‧方法
106、108、110‧‧‧步驟
200、200’‧‧‧裝置
202‧‧‧基板
202A、208A‧‧‧目標表面
204‧‧‧間隙
206‧‧‧圖案化結構
208‧‧‧層狀物
302、402‧‧‧底漆材料
404、404’‧‧‧交聯製程
502‧‧‧表面作用力增進組成
504、504A‧‧‧可交聯組成
504’、504A’‧‧‧交聯的組成
504”、504A”‧‧‧解交聯的組成
506‧‧‧鍵結
602‧‧‧層狀物
604‧‧‧曝光製程
802、802’‧‧‧分解製程
804‧‧‧底漆材料
第1圖係本發明一或多個實施例中,製作半導體裝置的方法之流程圖,其包含施加底漆材料。
第2A、3A、4A、6A、與7A圖係第1圖之方法的例示性實施例之多種中間步驟中,半導體結構的剖視圖。
第2B、3B、4B、6B、與7B圖係第1圖之方法的例示性實施例之多種中間步驟中,半導體結構的剖視圖。
第5圖係一些實施例中,在交聯步驟之前與之後的材料組成。
第8圖係一些實施例中,在交聯步驟與分解步驟之後的材料組成。
第9圖係本發明一或多個實施例中,底漆材料的可交聯組成。
下述內容提供的不同實施例或實例可實施本揭露的不同結構。特定構件與排列的實施例係用以簡化本揭露而非侷限本揭露。舉例來說,形成第一構件於第二構件上的敘述包含兩者直接接觸,或兩者之間隔有其他額外構件而非直接接觸。此外,本揭露之多種例子中可重複標號,但這些重複僅用 以簡化與清楚說明,不代表不同實施例及/或設置之間具有相同標號之單元之間具有相同的對應關係。
此外,空間性的相對用語如「下方」、「其下」、「較下方」、「上方」、「較上方」、或類似用語可用於簡化說明某一元件與另一元件在圖示中的相對關係。空間性的相對用語可延伸至以其他方向使用之元件,而非侷限於圖示方向。元件亦可轉動90°或其他角度,因此方向性用語僅用以說明圖示中的方向。
此外,此處的用語「基板」包含但不限於半導體基板。舉例來說,基板可為半導體基板材料如矽、鍺、碳化矽、矽鍺、鑽石、半導體化合物、或半導體合金,且基板可視情況包含一或多個磊晶層、可具有應力以增進效能、可包含絕緣層上矽基板、及/或具有其他合適的效能增進結構。然而用語「基板」與其目標表面亦可包含結構或層狀物如金屬層、絕緣層(如氧化矽或氮化矽)、金屬氧化物層、底抗反射塗層、光阻層、及/或其他用於半導體製程的合適材料形成其上,且其表面狀態需能進行後續製程。
值得注意的是本發明實施例可用於製作平面的基體金氧半場效電晶體、平面或垂直的多重閘極電晶體(比如鰭狀場效電晶體裝置、閘極全繞裝置、Ω-閘極裝置、或Π-閘極裝置)、應力半導體裝置、絕緣層上矽裝置、部份空乏的絕緣層上矽裝置、完全空乏的絕緣層上矽裝置、或本技術領域已知的其他裝置。此外,下述實施例可用於形成p型及/或n型裝置。本技術領域中具有通常知識者應理解本發明實施例亦有利於 裝置的其他實施例。
本發明實施例關於製作半導體的方法,更特別關於用於製備基板的目標表面以進行後續製程的材料組成。在一些實施例中,材料組成可作為一般微影圖案化製程的一部份,比如依積體電路設計佈局圖案化之多層光阻的一或多層。在一些實施例中,可提供製備表面的方法,且表面可用於後續製程如額外材料沉積、清潔、濕蝕刻、乾蝕刻、與類似製程。
對表面製備而言,半導體產業已採用金屬閘極取代習知的多晶矽為主的閘極。半導體製程的另一發展為蝕刻製程,其需更具選擇性、能蝕刻更複雜的膜結構、及/或提供更精細的蝕刻圖案。為達上述目的與其他先進的半導體製程技術,如何使表面具有合適的反應性/非反應性與一致性是重要關鍵。舉例來說,需改良目標表面使其具有合適的接觸角(比如與水滴之間)、合適的疏水性、或合適的親水性,以提供表面與其上的層狀物之間的適當親和力(如黏著性),及/或在額外製程(如蝕刻或清潔)中保護表面。
雖然現有的半導體製程已採用一些表面製備材料,但大部份的材料均具有缺點。缺點之一為後續製程如濕式製程(有機溶劑沖洗、暴露至酸性液體、或暴露至鹼性液體)或乾式製程(乾蝕刻)中,會不需要地消耗表面製備材料。此消耗來自於表面於形成其上的表面製備材料之間的弱作用力。表面製備材料的消耗會露出表面,這在後續製程中屬於不想要的狀況。另一方面,表面製備材料的消耗會露出下方層如氧化物、金屬、金屬氧化物、或類似物的表面,在後續製程中有損傷下 方層的風險。表面製備材料的另一缺點為難以控制及/或達到所需厚度。舉例來說,單層的表面製備材料通常無法達到所需厚度。在這些狀況下,表面製備材料難以或不可能作為填隙材料。綜上所述,填隙不足在後續製程中有損傷下方層的風險。如此一來,一些實施例可改良上述的一或多個缺點。
此處提供的一些實施例可用以產生及/或採用底漆材料,其包含所需的表面製備組成,即稱作表面作用力增進組成與可交聯組成。這些組成如表面作用力增進組成與可交聯組成,可一起作為底漆材料。在一些實施例中,底漆材料包含表面作用力增進組成與可交聯組成,其可用以控制底漆材料的厚度以達適當的填隙能力;與其施加的表面之間具有較強的作用力;並可減少或彌補不想要的底漆材料消耗以保護底漆材料的下方層。下述內容將說明採用多種底漆材料組成的多種方法,然而應理解類似的方法與組成亦可用於其他材料與製程。與現有技術相較,本發明實施例具有一些優點,但應理解其他實施例可提供不同的優點,下述內容不需說明所有優點,且所有實施例不必具有特定優點。
如第1圖所示的例子,製作裝置如半導體裝置的方法100採用本發明實施例的底漆材料。值得注意的是,在方法100之前、之中、與之後可具有額外步驟,且方法的額外實施例可取代、省略、或調換一些步驟。應注意的是方法100僅用以說明,而非侷限本發明至下述申請專利範圍未實際限縮的內容。方法100將搭配第2A至9圖進行說明。
方法100的步驟102提供目標表面。目標表面可為 下述多種組成的一或多者:介電物、金屬、半導體、聚合物如光阻、硬遮罩材料、底抗反射塗層、及/或其他合適表面。目標表面可為半導體基板(如矽晶圓)本身的表面,或者形成於半導體基板上的層狀物表面。在一些實施例中,目標表面實質上平坦。以第2A圖為例,裝置200具有基板202。基板202具有目標表面202A。在一些實施例中,目標表面可為圖案化的結構。以第2B圖為例,裝置200’具有圖案化結構206,其可為基板202或形成其上的層狀物。圖案化結構206可包含層狀物208於其上。在一些實施例中,層狀物208為介電層如氧化物(氧化矽)或氮化矽、金屬、金屬氮化物、及/或其他合適組成。在其他實施例中,可省略層狀物208。層狀物208包含目標表面208A。
基板202可為半導體晶圓如矽晶圓。此外,一些實施例的基板202可包含多種層狀物,比如形成於半導體基板上的導電或絕緣層。基板202亦可包含多種摻雜設置,端視本技術領域已知的設計需求而定。基板202亦可包含其他半導體如鍺、碳化矽、矽鍺、或鑽石。在其他實施例中,基板202可包含半導體化合物及/或半導體合金。此外,基板202視情況可包含磊晶層、可具有應力以增進效能、可包含絕緣層上矽結構、及/或可具有其他合適的增進效能結構。基板202可包含任何數目的層狀物於其上,且層狀物包含但不限於絕緣層、導電層、金屬層、半導體層、聚合物層、或類似物。
基板202包含目標表面202A。目標表面202A為基板202其露出的表面,其可用於進行後續製程。後續製程包含但不限於清潔、蝕刻、或沉積材料於目標表面上。目標表面202A 可具有已知性質。在一些例子中,這些性質如疏水或親水性質,可由量測表面與水滴的接觸角而得。
如第2B圖所示,裝置200’具有圖案化結構206與其上方的層狀物208,且層狀物208具有目標表面208A。目標表面208A為位於圖案化結構206上的層狀物208其露出的表面,其可用以進行後續製程。後續製程包含但不限於清潔、蝕刻、或沉積材料於目標表面上。在一實施例中,後續製程包含圖案化結構206中的間隙204所需的填隙製程。目標表面208A可具有已知性質。在一些例子中,這些性質如疏水或親水性質,可由量測表面與水滴的接觸角而得。在一實施例中,目標表面208A為含金屬的表面。在一些實施例中,目標表面208A包含氮化鈦。在一實施例中,表面208A的形成方法為沉積鈦與氮。
在一實施例中,間隙204的寬度小於約10nm。
方法100之步驟104接著決定適用於底漆材料的表面作用力增進組成。步驟104中決定的表面作用力增進組成,經證明可用於表面作用力增進及/或可增進表面性質,因此可稱作表面作用力組成。
如第2A圖所示,一些實施例中的基板202其表面202A的性質如接觸角將改變至所需值,使後續製程與表面具有較佳的作用力。在一些例子中,需降低表面的接觸角。在一些實施例中,需增加表面的接觸角。舉例來說,目標表面202A與後續沉積的層狀物之間的接觸角越接近,則可改善兩者之間的親和力(如黏著力)。同樣地,為了最佳化後續製程(如濕蝕刻),需要特定的接觸角。舉例來說,濕蝕刻製程中的表面與 水滴之間的接觸角,可介於45度至70度之間。藉由施加底漆材料(特別是底漆材料的表面作用力增進組成),可調整基板202上的目標表面至所需性質。在一實施例中,底漆材料的表面作用力增進組成可讓表面與水滴之間的接觸角降低。在一實施例中,底漆材料的表面作用力增進組成可讓表面與水滴之間的接觸角增加。在一些實施例中,需保護目標表面202A及/或基板202的層狀物的特性,以免於後續製程的影響。
如第2B圖所示,一些實施例的圖案化結構206不只需要上述的表面作用力增進或保護層,還需填滿間隙204。在一些例子中,需要降低接觸角以增進目標表面。在一些實施例中,需要增加接觸角以增進目標表面。舉例來說,目標表面208A與後續沉積的層狀物之間的接觸角較接近,有助於改善上方層的親和力(比如黏著力)。同樣地,最佳化後續製程如濕蝕刻需要特定的接觸角,比如用於濕蝕刻製程的水滴接觸角可介於45度至70度之間。藉由施加底漆材料(特別是底漆材料的表面作用力增進組成),可達目標表面208A所需的改良性質。在一實施例中,底漆材料的表面作用力增進組成,可降低與水滴之間的接觸角。在一實施例中,底漆材料的表面作用力增進組成,可增加與水滴之間的接觸角。
在一實施例中,目標表面202A/208A包含氧化物形成層(比如矽、氧化矽、或氮化矽)等親水性材料,因其可吸收來自大氣濕氣的表面層之水。除非在塗佈後續層狀物(如光阻)之前先轉變表面狀態,否則親水性表面會讓化學品穿透層狀物(如光阻)與基板之間的界面而造成損傷。為了確保製程中的黏 著性,可施加適當的底漆材料之表面作用力增進組成,以將親水性表面轉為疏水態。
在另一實施例中,目標表面202A/208A包含金屬,比如閘極結構的功函數金屬。藉由底漆材料,可達金屬與上方層之間所需的改良黏著力。
在另一實施例中,目標表面202A/208A為介電物如氮氧化鈦表面。藉由底漆材料,可達介電物與上方層之間所需的改良黏著力。
在一些實施例中,目標表面202A/208A為半導體、介電物、或金屬組成(如前述),且需施加底漆材料以保護目標表面202A/208A及/或任何下方層免於後續製程(比如蝕刻、沉積、或類似製程)的損傷或攻擊,可增進露出的表面。
底漆材料的組成可保護或調整露出的表面,因此可稱作底漆材料的表面作用力增進組成。上述組成可提供前述的任一或所有功能,或者其他所需功能。在一些實施例中,底漆材料的表面作用力增進組成可為含氮聚合物或單體材料。底漆材料的表面作用力增進組成之一例為吡啶。舉例來說,一些實施例中的目標表面為含金屬表面。當吡啶施加至表面(如含金屬表面)時,可與含金屬基板產生作用力並具有疏水特性。這有利於表面抵抗濕蝕刻。表面作用力增進組成的其他例包含兩個碳碳雙鍵的環狀結構,其亦包含氮。
在決定、選用、及/或提供底漆材料的表面作用力增進組成(比如含氮聚合物子/單體)後,方法100之步驟106將可交聯組成加入表面作用力增進組成,以形成底漆材料。可交聯 組成可為自我交聯以形成網狀結構的化學化合物。自我交聯指的是組成傾向與溶液中的相同組成交聯,而非與溶液中的其他組成(比如界面作用力增進組成)交聯。在一些實施例中,可交聯組成的兩個分子之間的交聯,係經由共價鍵或離子鍵連接。換言之,可交聯組成的分子或化合物之反應性末端,經由共價鍵/離子鍵連接至可交聯組成的另一分子或化合物之另一反應性末端,以形成網狀結構。網狀結構可讓底漆的表面作用力增進組成適當地位於沉積的底漆層中,比如網狀結構圍繞表面作用力增進組成。上述結構可避免不想要的底漆移除問題,即可控制底漆厚度及/或保護底漆材料的表面作用力增進組成。
在一實施例中,可交聯組成為酯類的(自我)交聯組成。在一實施例中,可交聯組成為環氧類的(自我)交聯組成。可交聯組成的例示性(非全列式)清單,如下述表格所示。
如第5圖所示的示意圖,底漆材料302包含表面作用力增進組成502與可交聯組成504。如圖所示,表面作用力增進組成502與可交聯組成504穿插於底漆材料302的溶液中。在至少一些實施例中,表面作用力增進組成502與可交聯組成504之間沒有共價鍵。底漆材料302指的是在沉積前及/或沉積中且在任何下述交聯製程之前,底漆材料302的狀態。
步驟106加入的可交聯組成(比如可交聯組成504)可為能形成網路結構的膜狀物之化合物,以避免後續製程移除表面作用力增進組成502及/或提供底漆合適的厚度(以利填隙)。在一實施例中,可交聯組成為自我交聯組成如上述。可交聯組成504可自我交聯,因此可交聯組成504的兩個或更多分 子(又稱作反應性基團)將經由共價鍵或離子鍵鍵結在一起。在一些實施例中,底漆材料302包含可交聯組成504的多個不同組成,且可交聯組成504中具有相同化學結構的組成可交聯,或者具有不同化學結構的組成可交聯。
例示性的交聯劑組成如第1表所示:
下述第2表為適用於本發明的其他交聯組成。在一些實施例中,下述組成可自我交聯如前述。
如上所述,一或多種上述組成可作為底漆材料的可交聯組成,且適於鍵結至第1表或第2表包含的其他組成。
在一些實施例中,可交聯組成至少占底漆材料的 1wt%。
在一些實施例中,製備底漆材料的方法包含在將底漆材料施加至目標表面如下述之前,混合底漆材料的組成(包含表面作用力增進組成與可交聯組成)。
方法100的步驟108接著將底漆材料(包含表面作用力增進組成與可交聯組成)施加至目標基板上。在一實施例中,底漆材料的施加方法採用旋轉塗佈製程。在此例中,交錯的多層材料層806之厚度可由旋轉塗佈製程的旋轉速率、施加材料的流速、施加材料的時間、以及其他因素控制。其他沉積方法包含但不限於化學氣相沉積。底漆材料的厚度可大於5nm。在一些實施例中,底漆材料的厚度需足以填隙,比如填入溝槽中。如第3A與3B圖所示的例子,底漆材料302分別施加至目標表面202A與208A。如前述內容與第5圖所示,底漆材料302包含表面作用力增進組成502與可交聯組成504。在施加底漆材料302後,裝置200與200’可分別具有調整後的暴露目標表面(比如底漆材料302的上表面)。如前所述,一些實施例中調整後的目標表面(即與原本的目標表面202A/208A相較的底漆材料302),其與水滴之間可具有調整後的接觸角,即疏水性/親水性改變。
方法100之步驟110接著對沉積於基板上的底漆材料塗層進行交聯製程。交聯製程可包含啟始化學反應以自我交聯。在一些實施例中,交聯反應包含將塗層暴露至升高的溫度。在一些實施例中,交聯製程為熱製程如烘烤。烘烤的製程條件可大於50℃與大於30秒。在一些實施例中,交聯反應包含 以射線照射塗層。射線可為可見光、紫外線、極紫外線、及/或適於啟始底漆材料之可交聯組成中的交聯反應的其他射線。在一些實施例中,射線波長介於50nm至1000nm之間。在一些實施例中,照射射線的時間為約5秒。
如第4A與4B圖所示的例子,對底漆材料302的塗層進行交聯製程404。如前所述,交聯製程404可包含熱源或射線源。在一些實施例中,底漆材料302之組成一開始可溶於溶劑中(見第5圖)。在暴露至交聯製程404後,底漆材料302轉變為底漆材料402,其於交聯製程404後不溶於溶劑。換言之,底漆材料組成在交聯製程後產生交聯。
如第5圖所示,對底漆材料302進行交聯製程404,而底漆材料302包含表面作用力促進組成502與尚未交聯的可交聯組成504。在進行交聯製程404後,調整底漆組成302以形成底漆材料402。底漆材料402包含表面作用力增進組成502與交聯的組成504'(即交聯後的可交聯組成504),其中兩個或更多的可交聯組成502經由離子/共價鍵鍵結形成交聯的組成504'。自我交聯形成鍵結506的網狀結構,如圖所示。在一些實施例中,表面作用力增進組成502並未改變。
如第4A與4B圖所示,施加交聯製程404至裝置200與200',以產生底漆材料402的塗層,其中可交聯組成處於交聯的狀態。交聯製程可為照射射線(比如紫外線或可見光)或熱製程(如烘烤)。
方法100之步驟112接著對具有底漆材料的基板進行後續製程。在一實施例中,在裝置上進行濕式清潔或蝕刻。 在一實施例中,沉積材料於底漆材料上。如上所述,一些實施例中沉積的材料與水滴之間的接觸角,以及底漆材料與水滴之間的接觸角實質上類似。沉積的材料可為金屬層(比如部份的金屬閘極結構)、介電層(比如閘極介電物)、及/或其他合適的半導體結構。
在一些例子中,底漆材料屬於圖案化製程的一部份。在一些例子中,底漆材料提供改良的表面以用於沉積圖案化材料(如光阻)。在一實施例中,底漆材料形成於底抗反射塗層下,且底抗反射塗層上形成有光阻。在一些例子中,底漆材料形成於底抗反射塗層上,之後再形成光阻層(比如沉積於底漆材料上),以改良底抗反射塗層與上方的光阻之間的作用力。在一些例子中,底漆材料屬於光阻材料堆疊(比如多層光阻)的一部份。在一些實施例中,光阻層或層狀物形成於底漆材料上。在一些實施例中,光阻層或層狀物直接形成於底漆材料上。
如第6A與6B圖所示的例子,分別對裝置200與200'進行圖案化製程。層狀物602位於底漆材料402(交聯狀態)上。在一些實施例中,層狀物602為光阻層。層狀物602可包含具有一或多個碳、氫、與氧的材料。可採用不同的光阻材料,比如採用KrF雷射作為射線源(248nm)或ArF雷射作為射線源(193nm)的光阻材料。此外亦可採用其他種類的光阻材料、射線源、與射線波長(比如極紫外線、電子束、或類似射線)。如圖所示,可採用經由光罩的圖案化射線束進行曝光製程604,以圖案化層狀物602。然而應注意的是,亦可採用多種其他圖案化層狀 物602的方法。
在一些實施例中,裝置200或200'上的底漆材料402將保留於一或多道製程中,接著再移除底漆材料如下述。在其他實施例中,底漆材料402將保留於與裝置200或200'相關的最終裝置其基板上。
在需要移除底漆材料的實施例中,方法100進行步驟114。如前所述,一些實施例可省略步驟114。當需要移除底漆材料時,方法100可先使之前交聯的底漆材料解交聯,因此可輕易移除解交聯的底漆材料(比如以可溶解交聯的底漆材料之溶劑),而不損傷下方的基板層。
在一些實施例中,移除底漆材料的方法包含分解製程,其使底漆材料402中交聯的組成解交聯,特別是使交聯的組成504'解交聯。在一實施例中,分解製程包含鹼或酸處理。鹼處理可為將底漆材料暴露至pH值大於約10的流體(液體或氣體)。酸處理可為將底漆材料暴露至pH值小於約5的流體(液體或氣體)。在一些實施例中,鹼及/或酸可為液態。
在一實施例中,酯類之交聯的組成504'可由鹼性處理分解。鹼性處理可採用氫氧化四甲基銨、氫氧化鉀、及/或其他合適的鹼。在一實施例中,環氧類之交聯的組成504'可由酸性處理分解。酸性處理可包含任何pH值低於7的溶液,比如鹽酸。
在一些實施例中,分解製程具有兩種功能:使交聯的組成504'解交聯,以形成解交聯的組成504";以及溶解含有解交聯的組成504"的底漆材料804。在一些實施例中,分解 製程自基板完全移除底漆材料804。其他實施例可進行多個步驟,比如先進行解交聯製程使交聯的組成解交聯,以形成解交聯的組成504";以及採用另外的溶液(解交聯的組成504"及底漆材料804可溶於其中)自基板移除底漆材料。
如第8圖所示,對底漆材料402進行分解製程802,其中底漆材料402包含表面作用力增進組成502,以及經由鍵結506交聯的可交聯組成504(即交聯的組成504')。在進行分解製程802之後,可調整底漆材料402以提供底漆材料804。底漆材料804包含表面作用力增進組成502,以及破壞交聯的組成504'之離子/共價鍵後形成之解交聯的組成504"。底漆材料804可溶於溶劑中,而交聯的組成(比如底漆材料402)不溶於此溶劑中。
如第7A與7B圖所示,對底漆材料402進行分解製程802,以形成底漆材料804(見第8圖)。底漆材料804已解交聯。
步驟114之分解製程提供解交聯,造成底漆材料具有溶劑可溶的成份。在一些實施例中,可採用鹼性或酸性處理移除解交聯的底漆材料,並保留任何下方的基板層(其材料未損傷)。鹼性或酸性處理可與解交聯的處理為相同步驟,或另外採用溶液進行鹼性或酸性處理。
在一些實施例中,一旦解交聯底漆材料,即施加溶液以移除層狀物。在一些例子中,溶液包含丙酮、醋酸酯、水、上述之組合、或其他合適的有機溶劑。溶液組成係擇以使解交聯的底漆材料可適當地溶解其中。可在濕蝕刻製程中施加溶液。由於解交聯與溶解度改變,溶液可有校地移除底漆材料而不損傷下方層。
如上所述,可在方法100之前、之中、與之後進行額外步驟,且方法的額外實施例可置換、省略、或調換一些步驟。在一實施例中,基板202及/或圖案化結構206為具有鰭狀物的半導體基板,而方法100進一步形成鰭狀場效電晶體裝置。與習知技術相較,此處所述的多種實施例提供許多優點。應理解的是,此處不需說明所有優點,所有實施例不需特定優點,且其他實施例可提供不同優點。在一例中,此處所述的實施例包含的方法改良底漆材料,適當的控制底漆厚度,易於移除底漆材料、限制不想要的底漆材料消耗、及/或適當的表面處理、及/或在後續製程中保護下方層。舉例來說,多種實施例提供其他底漆材料組成與對應方法,其中底漆材料可包含用以形成交聯的底漆材料的可交聯組成。在一些實施例中,交聯的底漆材料可實質上解交聯。在解交聯之後及/或之中,先前不溶之交聯的底漆材料組成將轉為可溶。如此一來,可藉由溶液輕易地移除解交聯的底漆材料,而不損傷下方的基板層。因此本發明實施例可克服處理材料組成與方法的多種缺點。
第9圖係方法100之多種步驟中,可交聯組成504之特定例子。第9圖的實施例為底漆材料之可交聯組成,其為酯類為主的材料。值得注意的是,第9圖中含有A的標號之組成,與第5與8圖中相同標號的可交聯組成類似。沉積底漆材料時,可交聯組成504A並未交聯,即與第1圖之方法100的步驟106與108類似。在進行交聯製程404’之後(如前述之交聯製程404),可交聯組成504A經由自我交聯形成交聯的組成504A’。交聯的組成504A’可形成於底漆材料402中,如上所述。在一實施例 中,交聯製程404’為熱烘烤。在一實施例中,交聯製程404’為紫外線硬化製程。可交聯組成將進行交聯反應,以形成網狀結構的膜如交聯的組成504A’。如前所述,交聯的組成504A’可讓表面作用力增進組成保留於網狀結構中(比如被網狀結構圍繞),並保護表面作用力增進組成不被後續製程移除。
在進行一或多道一般的半導體製程後,可對含有交聯的組成504A’的底漆材料進行分解製程802’(即前述分解製程802的一實施例)。在一實施例中,分解製程802’為鹼性處理,比如施加液態的鹼性溶液。在進行分解製程802’之後,交聯的組成504A’將解交聯,並成為解交聯的組成504A”。解交聯的組成504A”可為前述解交聯的組成504”的一實施例,其可包含於底漆材料804中。在形成解交聯的組成504A”之後,可用清潔製程去除底漆材料,且清潔製程可為導入能溶解解交聯的組成504A”的溶劑。在一些實施例中,分解製程802’所用的溶劑亦可溶解含解交聯的組成504A”的底漆材料。如此一來,一些實施例在單一步驟中,可解交聯並溶解可交聯組成。
因此本發明一實施例提供半導體裝置的製作方法,包括:提供基板;沉積底漆材料於基板上,其中底漆材料包括:表面作用力增進組成;以及可交聯組成。對底漆材料進行交聯製程,其中可交聯組成自我交聯以形成交聯的底漆材料。在含有交聯的底漆材料於其上的基板上,進行至少一半導體裝置的製程。舉例來說,半導體裝置的製程可為濕蝕刻、班蝕刻、沉積材料、圖案化材料、及/或其他製程。
在一實施例中,上述方法提供基板之步驟包括提 供溝槽開口,而沉積底漆材料之步驟包括將底漆材料填入溝槽開口中。
在一實施例中,上述方法之交聯製程為射線處理。
在一實施例中,上述方法之交聯製程為熱烘烤。
在一實施例中,上述方法提供基板之步驟包括提供上表面,其與水滴具有第一接觸角,其中沉積底漆材料之步驟包括底漆材料與水滴具有第二接觸角,且第一接觸角與第二接觸角不同,其中表面作用力增進組成提供第二接觸角。
在一實施例中,上述方法之表面作用力增進組成為吡啶。
在一實施例中,上述方法更包括在進行至少一半導體裝置製程後,移除交聯的底漆材料。
在一實施例中,上述方法移除交聯的底漆材料之步驟包括:使交聯的底漆材料解交聯。
在一實施例中,上述方法使交聯的底漆材料解交聯之步驟包括鹼處理與酸處理中至少一者。
在一實施例中,上述方法使交聯的底漆材料解交聯之步驟,包括提供氫氧化四甲基銨或氫氧化鉀至基板的鹼處理。
在另一實施例中,半導體裝置的製作方法包括:沉積底漆材料於半導體基板上露出的表面上。底漆材料包括:表面作用力增進組成,以及可交聯組成。啟始可交聯組成的自我交聯製程,其中自我交聯包含可交聯組成的第一分子鍵結至可交聯組成的第二分子。
在一些實施例中,上述方法之表面作用力增進組成改變露出表面的疏水等級。
在一些實施例中,上述方法更包括在啟始自我交聯製程之後,啟始解交聯製程,其中解交聯製程破壞可交聯組成的第一分子與第二分子之間的鍵結。
在一些實施例中,上述方法啟始解交聯製程的步驟包括施加酸或鹼。
在一些實施例中,上述方法施加酸或鹼的步驟自半導體基板移除底漆材料。
在又一實施例中,半導體裝置的製作方法包括:提供基板,其具有多個溝槽結構。沉積底漆材料以填入溝槽結構。底漆材料包括:含氮聚合物組成,以及酯類組成。進行射線照射或熱製程,以形成酯類組成之交聯的分子之網狀結構,其中網狀結構圍繞含氮聚合物組成。
在一些實施例中,上述方法更包括在具有交聯的分子之網狀結構的底漆材料填入溝槽結構時,進行濕蝕刻或乾蝕刻。
在一些實施例中,上述方法更包括在濕蝕刻或乾蝕刻後,移除具有交聯的分子之網狀結構的底漆材料。
在一些實施例中,上述方法更包括一下方層位於每一溝槽之側壁上,且底漆材料位於下方層上。
在一些實施例中,上述方法之酯類組成為乙二醇二甲基丙烯酸酯。
上述實施例之特徵有利於本技術領域中具有通常 知識者理解本發明。本技術領域中具有通常知識者應理解可採用本發明作基礎,設計並變化其他製程與結構以完成上述實施例之相同目的及/或相同優點。本技術領域中具有通常知識者亦應理解,這些等效置換並未脫離本發明之精神與範疇,並可在未脫離本發明之精神與範疇的前提下進行改變、替換、或更動。
Claims (1)
- 一種半導體裝置的製作方法,包括:提供一基板;以及沉積一底漆材料於該基板上,其中該底漆材料包括:一表面作用力增進組成;一可交聯組成;對該底漆材料進行交聯製程,其中該可交聯組成自我交聯以形成一交聯的底漆材料;以及在含有該交聯的底漆材料於其上的該基板上,進行至少一半導體裝置的製程。
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