TW201841250A - Plasma processing device - Google Patents

Abstract

The present invention provides a plasma processing apparatus capable of adjusting a composition of a processing gas in each of a plurality of gas shower heads using a common processing gas raw material supply unit. In the plasma processing apparatus (1) that performs plasma processing on the substrate (G) to be processed, first and second process gas raw material supply units (4a, 4b) for supplying the first and second process gas raw materials in a processing space (100) for accommodating the mounting table (13) on which the substrate to be processed (G) is placed are respectively provided with first and second supply flow rate adjustment sections (41a, 41b), a plurality of first and second distribution flow paths (401, 402) for distributing the first and second process gas materials to the plurality of gas shower heads (30a to 30d) are also respectively provided with first and second distribution flow rate adjustment units (421a to 424a, 421b to 424b).

Description

Plasma processing device

The present invention relates to a technique for plasma treatment of a substrate to be processed by a plasma-treated process gas.

In a manufacturing process of a flat panel display (FPD) such as a liquid crystal display (LCD), there is a glass substrate which is a substrate to be processed placed in a processing space, and a plasma-treated processing gas is supplied for etching treatment. Or plasma processing such as film processing. In the plasma treatment, various plasma processing apparatuses such as a plasma etching apparatus or a plasma CVD apparatus are used.

On the other hand, the size of the glass substrate is progressing toward enlargement. For example, in the rectangular glass substrate for LCD, the required amount is processed for each position of the processed surface of the short side x long side having a length of about 2200 mm × about 2400 mm, or even about 2800 mm × about 3000 mm. The gas, in addition, must be uniformly treated in the plane of the glass substrate.

In addition, as the size of the glass substrate increases, the concentration of the processing gas reaching the glass substrate, the state of the plasma, and the like may vary greatly in the surface to be processed. Therefore, there is a problem that the processing state of the glass substrate is uneven in the plane due to the processing gas. Furthermore, it is also difficult to supply a required amount of processing gas to each position of such a large glass substrate.

For example, Patent Document 1 discloses that the inside of the shower head is divided into concentric circles, for example, three buffer chambers are provided, and the common gas supply source is branched to the buffer chambers to supply electric power to the processing chamber in which the substrates are processed. A technique for etching gas for slurry etching. According to Patent Document 1, the etching gas supplied to the two buffer chambers on the peripheral portion side of the buffer chamber is supplied with an additional gas for adjusting the etching characteristics, and is locally adjusted in the substrate surface. The concentration of the etching gas. However, in the technique described in Patent Document 1, when an additional gas is supplied, a dedicated gas supply source is provided for supplying each of the etching gas to each of the buffer chambers, so that the gas supply source is increased in size. Hey. [Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent No. 4358727: Request No. 1, paragraphs 0004, 0028, 0049 to 0050, Fig. 5

[Problems to be solved by the invention]

The present invention has been made in view of such circumstances, and an object thereof is to provide a plasma processing apparatus capable of using a common processing gas raw material supply unit and adjusting a component of a processing gas for each of a plurality of gas shower heads. [Means to solve the problem]

In the plasma processing apparatus of the present invention, the substrate to be processed in the processing space to be vacuum-exhausted is subjected to plasma treatment by the plasma-treated processing gas, and the plasma processing apparatus is characterized by comprising: a processing container And comprising: a mounting table on which the substrate to be processed is placed, and a processing space for performing the plasma processing; and a plurality of gas shower heads respectively provided on a zenith surface constituting the processing space, and the zenith surface A plurality of regions formed by dividing the radial direction from the central portion side toward the peripheral portion side are formed with a gas discharge hole for supplying a processing gas to the processing space, and a plasma generating portion for discharging the head from the plurality of the plurality of shower heads The processing gas supplied to the processing space is plasma-formed; the first processing gas raw material supply unit for supplying the first processing gas raw material contained in the processing gas; and the second processing gas for supplying the second processing gas raw material a raw material supply unit; the first supply flow rate adjustment unit configured to be supplied from the first process gas raw material supply unit to The flow rate adjustment of the first process gas raw material in the processing space; the plurality of first distribution flow rate adjusting units are respectively provided in the first process gas raw material for adjusting the flow rate of the first supply flow rate adjusting unit a plurality of first distribution channels to the plurality of gas shower heads for regulating the flow rate of the first material gas supplied to each of the gas shower heads; and a second supply flow rate adjusting unit for performing the slave The second processing gas raw material supply unit is configured to adjust the flow rate of the second processing gas raw material supplied to the processing space; and the plurality of second distributed flow rate adjusting units are provided in the second supply flow rate adjusting unit The flow rate-regulated second process gas raw material is distributed to the plurality of second distribution flow paths of the plurality of gas shower heads to adjust the flow rate of the second material gas supplied to each of the gas shower heads. [Effect of the invention]

In the present invention, the first and second supply flow rate adjusting units that adjust the flow rates of the first and second process gas raw materials are provided in the first and second process gas raw material supply units, and the plurality of shower heads are distributed to the plurality of shower heads. The first and second distribution flow rate adjustment units are provided for each of the first and second distribution channels of the first and second process gas materials. As a result, the first and second process gas raw materials obtained from the common first and second process gas raw material supply units can be mixed at an arbitrary ratio and supplied to each position of the substrate to be processed.

Before explaining the specific configuration of the plasma processing apparatus 1 according to the embodiment of the present invention, the problems that are grasped during the implementation of the processing of the processing of the plasma processing apparatus 1 are described. One side will be described with reference to Figs. 1 and 2 are enlarged side elevational views showing different regions of the upper surface (processed surface) of the substrate G to be processed. The substrate G to be processed is laminated on the glass substrate 701 in the order of the SiO film 702 and the SiN film 703 as the ruthenium-containing film, and the photoresist film 704 which is exposed and developed is patterned on the upper surface of the SiN film 703. .

For example, the substrate G to be processed is configured by a glass substrate 701 for a rectangular FPD. Here, a liquid crystal display (LCD), an electroluminescence (EL) display, a plasma display panel (PDP), or the like is exemplified as the FPD.

The substrate G to be processed is made of at least one of a carbon tetrafluoride (CF ₄ ) gas or a nitrogen trifluoride (NF ₃ ) gas, which is a first processing gas raw material, and a second processing gas raw material, that is, oxygen. The etching gas of the (O ₂ ) gas is plasma-treated and supplied, and the SiO film 702 and the SiN film 703 which are not covered by the photoresist film 704 are removed while the photoresist film 704 is gradually ashed. . The SiO film 702 or the SiN film 703 corresponds to the etching target film of the present embodiment.

In response to the above-described processing, the present inventors have found that the longitudinal cross-sectional shape of the patterned photoresist film 704 is different depending on the position in the processed surface of the substrate G to be processed, and as a result, the results of the etching treatment tend to be different from each other.

For example, in the photoresist film 704 formed on the peripheral portion side of the substrate G to be processed, as shown in FIG. 1(a), the inclination (taper) of the end portion of the patterned photoresist film 704 becomes large. The situation.

Inclined end portions 704 of the resist film after the pattern is made large portion of the gas concentration O ₂ (partial pressure) is low (e.g., O ₂ gas / CF ₄ gas fluid ratio is 1: 3) of When the etching process is performed by etching the gas, as shown in FIG. 1(b), the SiO film 702 and the SiN film 703 on the glass substrate 701 are etched and removed in a good state. Further, when etching is performed using an etching gas having a high O ₂ concentration (for example, a flow ratio of O ₂ gas/CF ₄ gas of 3:2), as shown in FIG. 1(c), there is an SiO film 702, The end portion of the SiN film 703 remains in the form of a residue (cone residue 71a) depending on the taper shape of the photoresist film 704, or a small needle-shaped etching residue 71b.

Further, for example, as shown in FIG. 2(a), the photoresist film 704 formed on the central portion side of the substrate G to be processed has the inclination (taper) of the end portion of the patterned photoresist film 704. Smaller situation.

For the portion where the inclination of the end portion of the photoresist film 704 after the patterning is small, the concentration of the O ₂ gas is low (for example, the flow ratio of the O ₂ gas/CF ₄ gas which is the same as that of FIG. 1(b)). When the etching process is performed by etching the gas, as shown in FIG. 2(b), the SiO film 702 and the end portion of the SiN film 703 which are removed from the glass substrate 701 tend to have the needle-shaped etching residue 71b remaining. Further, when etching is performed using an etching gas having a high concentration of O ₂ gas (for example, a flow ratio of O ₂ gas/CF ₄ gas which is the same as in the case of FIG. 1(c)), as shown in FIG. 2(c) In general, the SiO film 702 and the SiN film 703 on the glass substrate 701 are etched and removed in a good state.

When the relationship between the concentration of the O ₂ gas in the etching gas described above and the result of the etching treatment in each position of the substrate G to be processed is performed, a good etching treatment is performed on the peripheral portion side of the substrate G to be processed. As a result, when the etching gas having a low concentration of the O ₂ gas is supplied to the entire substrate G to be processed, there are residual acicular residues in the end portions of the SiO film 702 and the SiN film 703 on the central portion side of the substrate G to be processed. After the 71b.

Further, in order to obtain a good etching treatment result on the central portion side of the substrate G to be processed, when the etching gas having a high concentration of O ₂ gas is supplied to the entire substrate G to be processed, there is a peripheral portion side of the substrate G to be processed. At the end portions of the SiO film 702 and the SiN film 703, the conical residue 71a or the needle-shaped etching residue 71b remains. Since the plasma processing apparatus 1 according to the present embodiment corresponds to the position of the substrate G to be processed, the concentration of the O ₂ gas in the etching gas can be changed in accordance with the problem described above.

The configuration of the plasma processing apparatus 1 according to the embodiment of the present invention will be described with reference to Figs. As shown in the longitudinal side view of Fig. 3, the plasma processing apparatus 1 is provided with a container body 10 having a rectangular tube shape made of a conductive material such as aluminum whose inner wall surface is anodized, and the container body 10 is electrically Ground. An opening is formed in the upper surface of the container body 10, and the opening is hermetically sealed by a rectangular metal window 3 provided to be insulated from the container body 10.

The space surrounded by the container body 10 and the metal window 3 becomes the processing space 100 of the substrate G to be processed. The space on the upper side of the metal window 3 serves as an antenna room 50 in which a high frequency antenna (plasma antenna) 5 is disposed. Further, a gate valve 102 for loading and unloading the loading/unloading port 101 of the substrate G to be processed and closing the loading/unloading port 101 is provided on the side wall of the container body 10.

On the lower side of the processing space 100, a mounting table 13 for placing the substrate G to be processed is disposed so as to face the metal window 3 described above. The mounting table 13 is made of a conductive material, for example, aluminum whose surface is anodized, and has a rectangular shape in plan view. The substrate G to be processed placed on the mounting table 13 is sucked and held by an electrostatic chuck (not shown). The mounting table 13 is housed in the insulator frame 14 and is disposed on the bottom surface of the container body 10 via the insulator frame 14.

The second high frequency power supply 152 is connected to the mounting table 13 via the matching unit 151. The second high-frequency power source 152 applies high-frequency power for biasing to the mounting table 13, for example, high-frequency power having a frequency of 3.2 MHz. The ions in the plasma generated in the processing space 100 are introduced into the substrate G to be processed by the self-bias generated by the high-frequency power for the bias voltage. Further, in the mounting table 13, in order to control the temperature of the substrate G to be processed, a temperature control mechanism composed of a heating means such as a ceramic heater and a refrigerant flow path, a temperature sensor, and a substrate G to be processed are provided. The gas flow path of the He gas for heat transmission is supplied to the back surface (all are not shown).

Further, an exhaust port 103 is formed on the bottom surface of the container body 10, and a vacuum exhaust unit 12 including a vacuum pump or the like is connected to the exhaust port 103. The inside of the processing space 100 is evacuated by vacuum to a pressure at the time of plasma treatment. As shown in FIG. 3, the exhaust port 103 is provided at a plurality of positions around the mounting table 13, and is disposed at a position near the four corners of the mounting table 13 which is rectangular in plan view, and is located along the four sides of the mounting table 13. Wait.

As shown in FIG. 3 and the top view of the metal window 3 viewed from the side of the processing space 100, a rectangular frame body made of metal such as aluminum is provided on the upper surface side of the side wall of the container body 10. Box 11. A sealing member 110 for holding the processing space 100 airtight is provided between the container body 10 and the metal frame 11. Here, the container body 10 and the metal frame 11 constitute the processing container of this embodiment.

Further, the metal window 3 of this example is divided into a plurality of partial windows 30 which are disposed inside the metal frame 11 and integrally constitute a rectangular metal window 3. Each of the partial windows 30 is configured by, for example, a non-magnetic, electrically conductive metal, aluminum, or an alloy containing aluminum.

Each of the partial windows 30 also serves as a gas shower heads 30a to 30d for supplying a processing gas. For example, as shown in FIG. 3, a gas diffusion chamber 301 for diffusing an etching gas is formed inside each of the gas shower heads 30a to 30d. Further, a plurality of gas discharge holes 302 for supplying a processing gas to the processing space 100 are formed on the lower surface side of the region where the gas diffusion chamber 301 is formed. The partial window 30 (gas shower heads 30a to 30d) having such a configuration is held by a holding portion (not shown) to constitute the metal window 3 described above, and constitutes a zenith surface of the processing space 100.

When the planar shape and arrangement of the gas shower heads 30a to 30d are described with reference to FIG. 4, the gas shower heads 30a to 30d are divided into three in the radial direction from the center portion side toward the peripheral portion side. The plural area is provided with a zenith surface, that is, a metal window 3. In the above-described divided area, a gas shower head 30a is provided in a rectangular region on the central portion side, and a gas jet is provided in a ring-shaped region around the gas shower head 30a. Sprinkle the head 30b.

Further, in the plural region in which the zenith surface is divided, the annular region on the outermost peripheral portion is divided into four regions including corner portions of the corner ring (corner portions of the rectangular zenith surface). And four regions including the side portions of the above-mentioned corner rings (rectangular shapes) between the adjacent corner portions. Further, the peripheral gas shower head 30d is provided in four regions including the corner portions, and the peripheral gas shower head 30c is provided in four regions including the side portions.

Further, in order to perform vacuum evacuation in the processing space 100, a plurality of already described exhaust ports 103 disposed around the mounting table 13 are disposed below the annular region where the peripheral gas shower heads 30c, 30d are disposed. The position, or the position on the outer side of the lower position (Fig. 3).

The gas shower heads 30a to 30d (partial windows 30) which are divided from each other are electrically insulated from the metal frame 11 or the container body 10 on the lower side thereof by the insulating member 31, while the adjacent gas shower heads 30a to 30d They are also insulated from each other by the insulating member 31 (see FIGS. 3 and 4).

Further, in order to improve the plasma resistance of the partial window 30, the surface of the partial window 30 on the processing space 100 side (the lower surface of the gas shower heads 30a to 30d) is plasma-resistant. Specific examples of the plasma-resistant coating include the formation of a dielectric film by anodizing oxidation treatment or ceramic spraying.

As shown in Fig. 3, the gas diffusion chambers 301 of the gas shower heads 30a to 30d are connected to the CF ₄ gas supply unit 4a and the O ₂ gas supply unit 4b via the gas supply tubes 43a to 43d. The CF ₄ gas supply unit 4a corresponds to the first process gas raw material supply unit (the "first process gas raw material supply unit" shown in Figs. 3 and 5), and the first process gas is supplied from the CF ₄ gas supply unit 4a. The raw material is also CF ₄ gas. In addition, it is a matter of course that the NF ₃ gas supply unit is provided instead of the CF ₄ gas supply unit 4a, and the NF ₃ gas is supplied as the first processing gas source.

On the downstream side of the CF ₄ gas supply unit 4a, a first supply flow rate adjustment unit 41a for adjusting the flow rate of the CF ₄ gas supplied to the processing space 100 is provided, and is provided on the downstream side of the first supply flow rate adjustment unit 41a. The first distribution flow path 401 having a plurality of roots, for example, four, is connected via the switching valve V1. Each of the first distribution channels 401 is connected to the gas supply pipes 43a to 43d on the gas shower heads 30a to 30d, and the CF ₄ gas whose flow rate is adjusted by the first supply flow rate adjustment unit 41a is distributed and supplied to the plurality of gases. The functions of the shower heads 30a to 30d. For example, the first supply flow rate adjustment unit 41a is configured by a mass flow controller (MFC).

Further, the first distribution flow rate adjustment units 421a to 424a for adjusting the flow rate of the CF ₄ gas supplied to each of the gas shower heads 30a to 30d are provided in each of the first distribution flow paths 401. For example, the first distribution flow rate adjustment units 421a to 424a are configured by MFC. The first distribution flow rate adjustment units 421a to 424a on the downstream side of the CF ₄ gas whose flow rate is adjusted by the first supply flow rate adjustment unit 41a on the upstream side are distributed at an arbitrary flow rate ratio, and therefore will be in the first supply flow rate adjustment unit. When the flow rate setting value of the CF ₄ gas of 41a is F ₁ and the flow rate setting values of the first distribution flow rate adjusting units 421a to 424a are f ₁₁ to f ₁₄ , F ₁ = f ₁₁ + f ₁₂ + f ₁₃ The relationship of +f ₁₄ was established.

On the downstream side of each of the first distribution flow rate adjustment units 421a to 424a, on-off valves V31 to V34 are provided, and the first distribution flow path 401 is connected to the gas supply pipes 43a to 43d at a position downstream of the on-off valves V31 to V34. At this time, the lengths and cross-sectional areas of the gas flow paths from the respective first distribution flow rate adjusting units 421a to 424a to the plurality of gas shower heads 30a to 30d are unified to make the conductivity of the gas flow paths equal, and thus the The plurality of gas shower heads 30a to 30d supply gas more uniformly.

In addition, the O ₂ gas supply unit 4b corresponds to the second process gas raw material supply unit of the present embodiment (the "second process gas raw material supply unit" shown in Figs. 3 and 5), and the _{second process} gas supply unit 4b supplies the second The gaseous feedstock, i.e., O ₂ gas, is treated. On the downstream side of the O ₂ gas supply unit 4b, a second supply flow rate adjustment unit 41b for adjusting the flow rate of the O ₂ gas supplied to the processing space 100 is provided, and on the downstream side of the second supply flow rate adjustment unit 41b A plurality of, for example, the first distribution flow path 401 are connected via the on-off valve V2, and four second distribution flow paths 402 are also connected. Each of the second distribution channels 402 merges with the first distribution channel 401 that is different from each other, and the gas supply tubes 43a to 43d are connected to the gas shower heads 30a to 30d via the first distribution channel 401. . Even in the second distribution flow path 402, the O ₂ gas whose flow rate is adjusted by the second supply flow rate adjustment unit 41b is distributed and supplied to the plurality of gas shower heads 30a to 30d. For example, the second supply flow rate adjustment unit 41b is configured by MFC.

Further, in each of the second distribution channels 402, second distribution flow rate adjustment units 421b to 424b for adjusting the flow rate of the O ₂ gas supplied to each of the gas shower heads 30a to 30d are provided. For example, the second distribution flow rate adjustment units 421b to 424b are configured by MFC. The second distribution flow rate adjustment units 421b to 424b on the downstream side of the O ₂ gas whose flow rate is adjusted by the second supply flow rate adjustment unit 41b on the upstream side are distributed at an arbitrary flow rate ratio, so that the second supply flow rate adjustment unit 41b flow rate of O ₂ gas to the set value F _2, when f ₂₁ ~ f ₂₄ of the flow rate setting value set in the allocation of the second portion 421b ~ 424b adjusting the flow rate _{of, F 2 = f 21 + f} 22 + f The relationship between ₂₃ +f ₂₄ was established.

On the downstream side of each of the second distribution flow rate adjustment units 421b to 424b, on-off valves V41 to V44 are provided, and each of the second distribution flow paths 402 is connected to the gas supply pipes 43a to 43d at a position downstream of the on-off valves V41 to V44. The first distribution flow paths 401 merge. At this time, the lengths and cross-sectional areas of the gas flow paths from the respective second distribution flow rate adjusting units 421b to 424b to the plurality of gas shower heads 30a to 30d are unified to make the conductivity of the gas flow paths equal, and thus the The plurality of gas shower heads 30a to 30d supply gas more uniformly.

Fig. 5 shows first and second distribution flow paths 401 and 402 in which the gas shower heads 30a to 30d constituting the metal window 3 and the first and second distribution flow rate adjustment units 421a to 424a and 421b to 424b are provided. The connection relationship. According to FIG. 5, the gas shower head 30a on the center side and the gas shower head 30b around the center are provided by the first distribution flow rate adjusting units 421a and 422a and the second distribution flow rate adjusting units 421b and 422b. The flow rate of each gas is adjusted.

In addition, the four peripheral gas shower heads 30c constituting the side portions of the corner ring on the side of the peripheral portion are supplied with a gas whose flow rate is adjusted by using the common first and second distributed flow rate adjusting portions 423a and 423b. Further, the four peripheral gas shower heads 30d constituting the corner portions of the corner ring are distributed and supplied with the first and second distributed flow rate adjusting portions 424a and 424b which are different from the side portions, and are adjusted in flow rate. gas.

Further, as shown in FIG. 3, a top plate portion 61 is provided on the upper side of the metal window 3, and the top plate portion 61 is supported by the side wall portion 63 provided on the metal frame 11. The antenna room 50 is constituted by a space surrounded by the metal window 3, the side wall portion 63, and the top plate portion 61, and the high frequency antenna 5 is disposed inside the antenna chamber 50 so as to face the partial window 30.

The high frequency antenna 5 is disposed to be spaced apart from the partial window 30 by a spacer formed of, for example, an insulating member (not shown). The high-frequency antenna 5 is formed in a spiral shape (not shown in a plan view) so as to surround the circumferential direction of the rectangular metal window 3 in a plane corresponding to each of the partial windows 30. Further, the shape of the radio-frequency antenna 5 is not limited to the vortex, and may be a loop antenna in which one or a plurality of antenna wires are annular. Further, even if a plurality of antennas are wound with one side of the offset angle and the entire antenna is formed into a spiral shape. In this way, when the antenna line is provided so as to surround the metal window 3 or each of the partial windows 30 so as to surround the circumferential direction thereof, the structure of the radio-frequency antenna 5 is different.

The first high frequency power supply 512 is connected to each of the high frequency antennas 5 via the matching unit 511. In each of the high-frequency antennas 5, high-frequency power of, for example, 13.56 MHz is supplied from the first high-frequency power source 512 via the matching unit 511. Accordingly, an eddy current is excited between the plasma treatments and the respective surfaces of the partial windows 30, and the eddy current forms an induced electric field inside the processing space 100. The process gas discharged from the gas discharge hole 302 is plasma-treated inside the processing space 100 by an induced electric field.

Further, as shown in FIG. 3, the plasma processing apparatus 1 is provided with a control unit 6. The control unit 6 is composed of a computer including a CPU (Central Processing Unit) and a memory unit (not shown), and is arranged in the memory unit for outputting control signals or flow rate adjusting units 41a, 41b, 421a to 424a, 421b. a program of the step (command) group of the flow rate setting value of 424b, and the control signal performs vacuum evacuation in the processing space 100 in which the substrate G to be processed is disposed, and the etching gas (processing gas) is used using the high frequency antenna 5. The operation of the substrate G to be processed is processed by plasma. The program is stored in a memory medium such as a hard disk, a CD, a magneto-optical disk, a memory card, etc., and is installed in the memory unit.

The operation of the plasma processing apparatus 1 having the configuration described above will be described. First, the gate valve 102 is opened, and the substrate to be processed G is carried into the processing space 100 through the loading/unloading port 101 from the adjacent vacuum transfer chamber by a transport mechanism (none of which is not shown). Then, the substrate G to be processed is placed on the mounting table 13 and fixed by an electrostatic chuck (not shown), and the transport mechanism is retracted from the processing space 100 to close the gate valve 102.

Then, each of the on-off valves V1, V2, V31 to V34, and V41 to V44 is turned on to supply CF ₄ gas and O ₂ gas whose flow rate is adjusted by the first supply flow rate adjustment unit 41a and the second supply flow rate adjustment unit 41b, respectively. . The O ₂ gas system is branched in the four second distribution channels 402, and after the second distribution flow rate adjustment units 421b to 424b are adjusted in flow rate, they are merged in the first distribution channel 401. In addition, the CF ₄ gas system is branched in the four first distribution channels 401, and after the first distribution flow rate adjustment units 421a to 424a are adjusted in flow rate, they are mixed with the O ₂ gas supplied from the second distribution channel 402 side.

The CF ₄ gas and the O ₂ gas are respectively supplied by the first supply flow rate adjustment unit 41a, the second supply flow rate adjustment unit 41b, the first distribution flow rate adjustment units 421a to 424a, and the second distribution flow rate adjustment units 421b to 424b. After the two-stage flow rate adjustment, the first and second process gas raw materials obtained from the first and second process gas raw material supply units are mixed in an arbitrary ratio and supplied to each other in a relatively simple configuration. To each position of the substrate to be processed. As a result, etching treatment can be performed on each of the regions of the glass substrate 701 at a flow ratio of the O ₂ gas/CF ₄ gas corresponding to the inclination of the end portion of the photoresist film 704. The etching gas obtained by mixing the CF ₄ gas and the O ₂ gas is introduced into the gas diffusion chamber 301 of each of the gas shower heads 30a to 30d via the gas supply pipes 43a to 43d.

When the flow ratio of the O ₂ gas/CF ₄ gas is described, the etching gas distributed to the gas shower head 30a is adjusted to be in the range of O ₂ gas / CF ₄ gas = 1:3 to 3:2. The value of the etching gas to be distributed to the peripheral gas shower heads 30c and 30d is adjusted to a value in the range of O ₂ gas / CF ₄ gas = 1:3 to 3:2. Further, with respect to the etching gas distributed to the gas shower head 30b located between the gas shower head 30a and the peripheral gas shower heads 30c, 30d, the flow ratio of the O ₂ gas / CF ₄ gas is adjusted to the above Values in each range. Further, as will be described later, the peripheral gas shower head portion 30c of the side portion and the peripheral gas shower head portion 30d of the corner portion may supply an etching gas having a flow ratio of O ₂ gas/CF ₄ gas different from each other.

Further, on the container main body 10 side, the vacuum exhaust unit 12 performs vacuum evacuation in the processing space 100 to adjust the inside of the processing space 100 to a pressure atmosphere of, for example, about 0.66 to 26.6 Pa. In addition, the temperature of the substrate G to be processed placed on the mounting table 13 is adjusted, and He gas for heat transfer is supplied to the back side of the substrate G to be processed.

Next, high-frequency power is applied to the high-frequency antenna 5 from the first high-frequency power source 512, whereby a uniform induced electric field is generated in the processing space 100 via the metal window 3. As a result, the etching gas is plasmatized in the processing space 100 by the induced electric field to generate a high-density inductively coupled plasma. By the high-frequency power for bias applied to the mounting table 13 from the second high-frequency power source 152, ions in the plasma are introduced toward the substrate G to be processed, and etching of the substrate G to be processed is performed.

At this time, the first and second distribution flow rate adjustment units 421a to 424a and 421b to 424b are located at the center portion from the peripheral gas shower heads 30c and 30d located on the zenith surface, that is, the peripheral portion side of the metal window 3 The flow rate of CF ₄ gas and O ₂ gas is set to be higher so that the concentration of O ₂ gas in the etching gas supplied from the gas shower heads 30b and 30a on the side is higher. In other words, the first and second distribution flow rate adjustment units 421a to 424a and 421b to 424b are tapered in accordance with the end portion of the photoresist film 704 on the upper surface side of the SiO film 702 or the SiN film 703 (etching target film). The gas shower heads 30b and 30d which are different in size from each other, and the gas shower heads 30c and 30d which supply the position of the etching gas to the region where the taper is large, the gas shower head 30b which supplies the position of the etching gas from the region where the taper is small, The flow rate of CF ₄ gas and O ₂ gas is set so that the oxygen concentration in the etching gas supplied to 30a is high.

By the flow rate setting of the CF ₄ gas and the O ₂ gas, the region on the peripheral side of the substrate G to be processed (the FIG. 1(a)) is patterned on the photoresist film 704 having a large taper at the end portion, and O can be used. ₂ of the low-concentration gas etch gas for etching. As a result, the SiO film 702 and the SiN film 703 of the glass substrate 701 can be removed and removed in a good state (FIG. 1(b)).

At this time, the peripheral air shower head 30c of the side portion on the peripheral portion side and the peripheral gas shower head portion 30d at the corner portion are connected to the different first and second distribution flow rate adjusting portions 423a, 424a, and 423b. Further, 424b may have different concentrations of O ₂ gas in the etching gas supplied to each of the peripheral gas shower heads 30c and 30d.

Further, in the region where the central portion side of the substrate G to be processed of the photoresist film 704 having a small tapered portion is formed in the pattern (Fig. 2(a)), etching treatment can be performed using an etching gas having a high concentration of O ₂ gas. . As a result, the SiO film 702 and the SiN film 703 can be removed from the glass substrate 701 in a good state (Fig. 2(c)).

Further, if the preset time only for plasma processing, even when stopping the supply of power from each of the high-frequency power source 512,152, and CF ₄ gas is supplied from a CF ₄ gas supply portion 4a, O ₂ gas supplying unit 4b, O ₂ The gas is also subjected to exhaust treatment from within the processing space 100. Thereafter, the substrate G to be processed is carried out in the reverse order of the loading.

When the plasma processing apparatus 1 according to the present embodiment is used, the following effects are obtained. The CF ₄ gas supply unit 4a and the O ₂ gas supply unit 4b are provided with first and second supply flow rate adjustment units 41a and 41b for adjusting the flow rates of the CF ₄ gas and the O ₂ gas, respectively, and even for the CF ₄ The gas and O ₂ gas are distributed to the plurality of first and second distribution channels 401 and 402 of the plurality of gas shower heads 30a to 30d, and the first and second distribution flow rate adjustment units 421a to 424a and 421b to 424b are also provided. . As a result, it can be mixed in any proportion 4a, O ₂ gas supply unit of the CF ₄ gas is made from a common CF ₄ gas supply portion 4b, O ₂ gas, these gases may be at a ratio of the etch is expected after mixing The gas is supplied to each position of the substrate G to be processed. According to this, even if the longitudinal cross-sectional shape of the photoresist film 704 which is patterned in accordance with the position of the surface to be processed of the substrate G to be processed is different, the flow rate of the CF ₄ gas and the O ₂ gas corresponding to the longitudinal cross-sectional shape thereof can be made. Since the ratio is supplied to each of the plurality of gas shower heads 30a to 30d, a good etching treatment result can be obtained.

Here, the plasma processing apparatus 1 configured to be able to supply etching gases having different O ₂ concentrations from the plurality of gas shower heads 30a to 30d is not limited to the case described with reference to FIGS. 1 and 2, that is, In the process in which the residual of the tapered residue 71a or the etching residue 71b is a problem, the etching process of the etching target film (in the above example, the SiO film 702 or the SiN film 703 which is a ruthenium film) is removed in a good state. For example, when the already described inclination formed at the end portion of the photoresist film 704 is transferred to the pattern after the etching treatment, it is also possible to align the tapered shape to be transferred, and it is also possible to use the above-mentioned plasma treatment. Device 1.

(a) and (a) of FIG. 6 show an example in which a photoresist film 704 is patterned on a substrate G to be processed, which is formed of a thin film transistor, or a molybdenum, that is, an etching target film 707. The description of the lower layer side of the film 707).

The polycrystalline tantalum film or the molybdenum film, that is, the etching target film 707 can be used to include a carbon tetrafluoride (CF ₄ ) gas, a sulfur hexafluoride (SF ₆ ) gas, and a nitrogen trifluoride (NF ₃ ) gas from the first processing gas. The gas or the chlorine (Cl ₂ ) gas is selected by removing at least one of the gases and the etching gas of the second process gas, that is, the gas of oxygen (O ₂ ). In the present example, the case where the etching target film 707 is removed using an etching gas containing CF ₄ gas and O ₂ gas will be described in the same manner as the removal of the ruthenium-containing film (SiO film 702 or SiN film 703).

Here, the taper of the film of the photoresist film 704 may be affected by the coating and development process of the photoresist film 704. Depending on the process, there are also examples shown in FIGS. 1(a) and 2(a). On the other hand, on the central portion side of the substrate G to be processed, the taper becomes large, and the taper on the peripheral portion side becomes small. Figures 6(a) and 7(a) show such an example.

In this manner, for the substrate G to be processed on which the tapered photoresist film 704 is formed, for example, etching of the CF ₄ gas/O ₂ gas mixture ratio (O ₂ mixing ratio concentration) is equal to the total of the substrate G to be processed. The case where the gas was etched was examined. In the etching treatment using the photoresist film 704, the photoresist film 704 is gradually ashed by the action of the O ₂ gas contained in the etching gas, and etching of the etching target film 707 is performed. Therefore, by controlling the concentration of the O ₂ gas contained in the etching gas, the ashing rate of the photoresist film 704 in the etching of the etching target film 707 can be changed.

At this time, when the concentration of the O ₂ gas in the etching gas is almost equal between the central portion side and the peripheral portion side of the substrate G to be processed, the amount of ashing per unit time of the photoresist film 704 at each position is almost Etching is performed under the same conditions. As a result, since the etching is performed while maintaining the taper of the photoresist film 704, the taper to the pattern 707a is different in the surface of the substrate G to be processed. In other words, the taper angle θ ₁ at the end portion of the pattern 707a formed on the central portion side of the substrate G to be processed is larger than the taper angle θ ₂ at the end portion of the pattern 707a formed on the peripheral portion side ( FIG. 6 (b), 7(b)).

Further, it is also necessary to make the taper of the pattern 707a of polycrystalline germanium or molybdenum uniform in the plane of the substrate G to be processed as much as possible by the subsequent processing from the subsequent etching process. The plasma processing apparatus 1 explained using Fig. 3 can be used even in such a case. In this case, the first distribution flow rate adjustment units 421a to 424a perform the flow rate setting of the CF ₄ gas so that the etching process is completed within a specific processing time. Further, the second distribution flow rate adjusting units 421b to 424b are from the gas shower head located on the center side of the peripheral gas shower heads 30c and 30d on the side of the zenith surface, that is, on the peripheral side of the metal window 3. The flow rate of the O ₂ gas is set to be higher so that the concentration of the O ₂ gas in the supplied etching gas is higher in 30b and 30a.

In other words, the first and second distribution flow rate adjustment units 421a to 424a and 421b to 424b are etched in a region smaller than the taper of the end portion of the photoresist film 704 which is patterned on the upper surface side of the etching target film 707. The gas shower heads 30c and 30d at the position of the gas are set so as to have a high oxygen concentration in the etching gas supplied from the gas shower heads 30b and 30a at the position where the etching gas is supplied to the region having the large taper. The flow rate of CF ₄ gas and O ₂ gas.

By setting the flow rate of the CF ₄ gas and the O ₂ gas, a region on the central portion side of the substrate G to be processed (see FIG. 6( a )) in which the tapered photoresist film 704 is formed by using a pattern is used, and O ₂ gas is used. The etching gas having a high concentration is etched, and the region on the peripheral edge side of the substrate G to be processed which is patterned with the tapered thin photoresist film 704 is patterned (Fig. 7 (a)), and etching using a low concentration of O ₂ gas is used. The gas is etched.

At this time, since the ashing speed of the photoresist film 704 having a large taper angle is larger than the photoresist film 704 having a small taper angle, ashing is performed in a direction in which the difference in the taper angle of each region is slowed down. As a result, the taper θ' ₁ and θ' ₂ of the end portion of the pattern 707a formed by the photoresist film 704 can be etched while being close to each other (Fig. 6 (c), Fig. 7 (c)).

Next, the configuration and application process of the plasma processing apparatus 1a according to the second embodiment will be described with reference to Figs. Fig. 8 (a) is an enlarged longitudinal sectional side view showing the upper surface of the substrate G to be processed. In the substrate G to be processed, an aluminum film 705 having a thickness of about several hundred nm is formed on the glass substrate 701, and an SiO ₂ film 706 having a thickness of about several tens of nanometers is formed thereon.

Further, on the upper surface of the SiO ₂ film 706, a patterned film for etching the aluminum film 705 and the SiO ₂ film 706 is formed into a line and gap-shaped photoresist film 704a. The photoresist film 704a is patterned such that the line width and the gap width of the line and the gap are about several tens nm.

By supplying the first processing gas raw material to the substrate G to be processed having the above-described configuration, the chlorine (Cl ₂ ) gas which is the main etching gas and the second processing gas raw material are used as the nitrogen which is added as the gas. (N ₂ ) gas and an additive gas containing a halogen-containing gas (hereinafter also referred to as "halogen-containing additive gas"), for example, a gas containing trifluoromethane (CHF ₃ ) and being plasma-treated to be removed without being blocked by a photoresist The film 704a is etched by the aluminum film 705 and the SiO ₂ film 706 in the covered region. Here, the halogen-added gas is used, and although trifluoromethane (CHF ₃ ) is used, CF ₄ , C ₂ HF ₅ , C ₄ F ₈ , BCl ₃ , HCl, or the like can be used.

With respect to the substrate G to be processed which has been subjected to the above-described processing, the inventors of the present invention have found that it is easy to perform an etching treatment in accordance with the position in the surface to be processed of the substrate G to be processed, and it is difficult to obtain a desired line and gap pattern 72 by etching. The situation of the area.

For example, on the peripheral portion side of the substrate G to be processed, as shown in FIG. 8(b), a relatively good line and gap pattern 72 is formed, and on the central portion side of the substrate G to be processed, as shown in FIG. 8(c) As shown, an incomplete pattern 73 due to poor etching is formed. The reason why the incomplete pattern 73 is formed on the central portion side of the substrate G to be processed is predicted to be larger than the amount of carbon generated by etching the photoresist film 704a on the peripheral portion side of the substrate G to be processed. The generated carbon has a low exhausting ability, so that the carbon is adhered to the aluminum film 705 which is not covered by the photoresist film 704a, and the etching process by the main etching gas, that is, Cl ₂ gas, on the SiO ₂ film 706 is Inhibition caused.

Then, the plasma processing apparatus 1a according to the second embodiment includes a gas shower heads 30a to 30d divided into a plurality of portions, and is configured to supply etching gas having a different flow rate to each region of the substrate G to be processed. FIG. 9 is a view schematically showing a Cl ₂ gas supply unit 4 c (shown as “first processing gas raw material supply unit” in FIG. 9 ), and a second processing gas raw material supply unit, that is, a first processing gas raw material supply unit. The N ₂ gas supply unit 4d and the halogen-containing additive gas supply unit 4e (indicated by the second processing gas raw material supply unit (1) and the second processing gas raw material supply unit (2), respectively, in FIG. The heads 30a to 30d are supplied with the supply paths of the respective gases. The specific device configuration of the plasma processing apparatus 1a is the same as that of the plasma processing apparatus 1 described with reference to Figs. 3 and 4, and therefore will not be described again. In the plasma processing apparatus 1a shown in Fig. 9, and the plasma processing apparatus 1b shown in Fig. 10 which will be described later, the components common to those described with reference to Figs. 3 and 4 are denoted by the symbols used in the drawings. The same symbol.

The plasma processing apparatus 1a shown in Fig. 9 is a type in which the gas types of the first and second process gas raw materials are different, and the two types of the gas are supplied from the N ₂ gas supply unit 4d and the halogen-containing additive gas supply unit 4e. After the gas, the second distribution channel 402 is branched, which is different from the plasma processing apparatus 1 according to the first embodiment described above. Further, in this example, the flow ratio of the N ₂ gas/halogen-containing additive is the same between the gas shower heads 30a to 30d, and Cl can be distributed from each of the gas shower heads 30a to 30d. _The flow rate adjustment by the first and second distribution flow rate adjustment units 421a to 424a and 421b to 424b is performed in a manner in which the gas distribution ratio is different.

When the plasma processing apparatus 1a having the above-described configuration is provided, the gas shower head 30a on the central portion side of the substrate G to be processed which is likely to adhere to the carbon due to the photoresist film 704a at the time of etching is used. The distribution ratio of the etching gas, that is, the Cl ₂ gas distribution additive gas, that is, the N ₂ gas and the halogen-containing additive gas, is smaller than the peripheral gas shower heads 30c and 30d on the peripheral portion side, and can be suppressed by the photoresist film 704a. A good line and gap pattern 72 can be obtained by the adhesion of carbon. In addition, the supply flow rate of the main processing gas raw material, that is, the main etching gas and the second processing gas raw material, that is, the additive gas, can be made different between the peripheral gas shower heads 30c and 30d divided in the circumferential direction.

As described above, in the plasma processing apparatuses 1 and 1a according to the first and second embodiments described with reference to FIGS. 3, 4 and 7, the peripheral gas shower head 30c located in the angular annular region on the outermost peripheral side, The peripheral gas shower head 30d is an example of division in the circumferential direction, but the peripheral gas shower head 30c and the peripheral gas shower head 30d which are divided in the circumferential direction are not limited to the outermost peripheral side.

Even if the partial window 30 is divided into the zenith surface in the radial direction, the peripheral gas shower heads 30c and 30d may be disposed in the circumferential direction in each of the annular regions on the innermost side of the outermost circumference. For example, when it is located in a region which is located on the outer peripheral side of 1/2 of the distance from the center position of the partial window 30 to the peripheral position, by providing the peripheral gas shower heads 30c and 30d which are divided in the circumferential direction, In response to the positional relationship with the exhaust port 103, the processing result of adjusting the flow rate ratio of the etching gas (process gas) and adjusting the supply flow rate is improved.

In addition, it is not necessary to divide in the circumferential direction of the outer peripheral side of the partial window 30. As shown in the plasma processing apparatus 1b of FIG. 10, the gas shower head 30e disposed in the region on the outer peripheral side formed by dividing the rectangular partial window 30 in the radial direction is not divided in the circumferential direction. The processing gas may be supplied from the gas shower head 30e of the angular ring shape.

Fig. 10 is a view showing that a first processing gas raw material, i.e., a silicon tetrafluoride (SiF ₄ ) gas and a silicon tetrachloride (SiCl ₄ ) gas, and a second processing gas raw material, that is, nitrogen (N ₂ ) gas or An example of the configuration of the plasma processing apparatus 1b in which the film forming gas of the oxygen (O ₂ ) gas is plasma-treated and supplied to form a film of SiO ₂ film or SiN film on the substrate G to be processed.

In FIG 10, illustrates a set SiC 1 ₄ gas supply portion 4f and ₄ gas supply portion SiF 4h as the first process gas material supply section (in FIG. 10 respectively as "the first process gas material supply section (1), the first processing In the gas raw material supply unit (2), the N ₂ gas supply unit 4g and the O ₂ gas supply unit 4i are provided as the second processing gas raw material supply unit (the second processing gas raw material supply unit is shown in Fig. 10). The second processing gas raw material supply unit (2). The first supply flow rate adjusting units 41a and 41c are provided on the downstream side of the SiCl ₄ gas supply unit 4f and the SiF ₄ gas supply unit 4h, and the first supply flow rate is further provided. On the downstream side of the adjustment units 41a and 41c, three first distribution flow paths 401 are connected in common via the switching valves V1 and V3. Further, on the downstream side of the N ₂ gas supply unit 4g and the O ₂ gas supply unit 4i, respectively The first supply flow rate adjustment units 41b and 41d are provided, and further, three second distribution flow paths 402 are connected to each other via the on-off valves V2 and V4 on the downstream side of the first supply flow rate adjustment units 41b and 41d.

The plasma processing apparatus 1b shown in FIG. 10 mixes the two types of gas supplied from the SiCl ₄ gas supply unit 4f and the SiF ₄ gas supply unit 4h, and is branched at the first distribution flow path 401, and from N _{2 .} The gas supplied to one of the gas supply unit 4g and the O ₂ gas supply unit 4i is different from the plasma processing apparatus 1 according to the first embodiment described above in that the second distribution flow path 402 is branched. By supplying N ₂ gas and O ₂ gas from either one of the N ₂ gas supply unit 4g and the O ₂ gas supply unit 4i, the SiN film or the SiO ₂ film can be switched. In addition, the specific device configuration of the plasma processing apparatus 1b is the same as that of the plasma processing apparatus 1 described with reference to Figs. 3 and 4, and therefore will not be described again.

Fig. 11 shows the pressure at each position in the path from the gas tank provided with the SiCl ₄ gas supply unit 4f, the SiF ₄ gas supply unit 4h, and the N ₂ gas supply unit 4g to the gas shower heads 30a, 30b, and 30e. In the drawing of the four corners in Fig. 11, the second distribution flow path 402 is not provided, and the SiCl ₄ gas supply unit 4f and the SiCl ₄ gas supply unit 4h and N _{2 are} provided on the upstream side of the first distribution flow rate adjustment units 421a to 423a. The gas supply unit 4g mixes the SiF ₄ gas whose flow rate is adjusted to, for example, 150 sccm, the SiF ₄ gas whose flow rate is adjusted to 150 sccm, and the N ₂ gas whose flow rate is adjusted to 4000 sccm, and supplies it to the gas spray through the first distribution flow path 401. The pressure at each position in the case of the heads 30a, 30b, 30e.

When the SiCl ₄ gas, the SiF ₄ gas, and the N ₂ gas are mixed in advance, the total pressure in the path of the MFC, that is, the upstream side of the first distribution flow rate adjusting portions 421a to 423a is raised to about 33 kPa (250 torr). When the vapor pressure curve of SiCl ₄ (boiling point 57.6 ° C) shown in Fig. 12 is used, the pressure is a vapor pressure at a temperature higher than 25 °C. Therefore, when the piping on the upstream side of the first distribution flow rate adjusting portions 421a to 423a through which the mixed gas (film forming gas) of the SiCl ₄ gas and the SiF ₄ gas and the N ₂ gas flows is not heated, the SiCl _{4 is} condensed.

In addition, since the first distribution flow rate adjustment units 421a to 423a have a small conductivity, the pressure of the mixed gas rises upstream of the first distribution flow rate adjustment units 421a to 423a, so that it is difficult to accurately supply the SiCl ₄ gas having a low vapor pressure. The problem.

Then, as shown in FIG. 10, the first distribution flow path 401 for the SiCl ₄ gas and the SiF ₄ gas supplied from the SiCl ₄ gas supply unit 4f and the SiF ₄ gas supply unit 4h is separated and supplied from the N ₂ gas. In the second distribution flow path 402 for supplying the N ₂ gas to be supplied, the total pressure in the path on the upstream side of the first distribution flow rate adjustment units 421a to 423a can be lowered as shown by a diamond in FIG. inhibition of SiCl ₄ vapor pressure of the condensable gas, SiCl ₄ gas is simultaneously supplied correctly. Moreover, even in the switched 4g supplied from N ₂ gas N ₂ gas supplying unit, from the O ₂ gas supply portion 4i O ₂ gas, using a mixed gas of SiCl ₄ gas and SiF ₄ gas and O ₂ gases (film forming gas In the case of film formation, the same effects can be obtained.

In the case where SiCl ₄ gas or SiF ₄ gas is separately supplied from the SiCl ₄ gas supply unit 4f or the SiF ₄ gas supply unit 4h, when the substances constituting the respective gases are condensed or the problem of difficulty in supplying them is difficult, It is also possible to separate the first distribution flow path 401 for the SiCl ₄ gas or the SiF ₄ gas, and the second distribution flow path 402 for supplying the N ₂ gas or the O ₂ gas. According to this, it is possible to suppress the condensation of each substance, and further, it is possible to supply the SiCl ₄ gas or the SiF ₄ gas correctly.

In the example described above, an example in which SiCl ₄ gas and SiF ₄ gas are used is exemplified as the first processing gas raw material. Here, in the case where the first process gas raw material is used as the raw material of Si, it is also possible to use a combination of SiBr ₄ and SiF ₂ Cl in addition to the already described SiCl ₄ and SiF ₄ . _2. Any gas species or more than two gas species selected from the gas population of SiH ₄ . Further, in the above examples, an example in which N ₂ gas and O ₂ gas are used is shown as an example of the second processing gas raw material. Here, when the second processing gas raw material is used as the oxidizing gas, the nitriding gas, the diluent gas, or the clean gas, the gas species that can be used may be used in combination from O ₂ , N ₂ , N ₂ O, and Ar. Any gas species selected from the gas population of He, NF ₃ , or more than two gas species.

In the same manner as the plasma processing apparatus 1b described above, the SiCl ₄ gas supply unit 4f and the SiF ₄ gas supply unit 4h are separated by the necessity of being upstream of the gas shower heads 30a, 30b, and 30e (1st) In the case of the processing gas raw material supply unit), the N ₂ gas supply unit 4g or the O ₂ gas supply unit 4i (the second processing gas raw material supply unit), it is not necessary to divide the outer peripheral side of the gas shower head 30e in the circumferential direction. However, from the viewpoint of the adjustment of the film thickness and the like, it is necessary to change the supply flow rate of the film forming gas or the first and second process gas materials in each of the regions divided in the circumferential direction such as the corner portion and the side portion of the substrate G to be processed. In the case of the flow ratio, the supply of the film forming gas may be performed by using the peripheral gas shower heads 30c and 30d divided in the circumferential direction.

As described above, the plasma processing apparatuses 1, 1a, and 1b according to the embodiment described with reference to Figs. 3, 4, 7, and 8 show that the induced electric field by using the high-frequency antenna 5 is supplied to the processing space. An example of plasma treatment of 100 treatment gases. However, the method of plasmaizing the processing gas is not limited to the inductive coupling method. For example, in the plasma processing apparatus 1 shown in FIG. 3, the first high-frequency power source 512 is connected to each of the gas shower heads 30a to 30d, and the mounting table 13 and the metal window are formed instead of the arrangement of the high-frequency antenna 5. The parallel plate type plasma generating portion generated by the 3 (gas shower heads 30a to 30d) may be plasma-coupled by the capacitive coupling.

Further, even in the case of using the inductively coupled plasma of the high-frequency antenna 5, the gas shower heads 30a to 30d, 30e are not necessarily required by the partial window 30 made of metal, even if it is made of, for example, quartz. A dielectric window composed of a dielectric material may also be used.

Further, the treatment of the substrate G to be processed is not limited to the above-described etching treatment or film formation treatment, and may be used for other film formation treatment or etching of a metal film, an ITO film, an oxide film, or the like at the time of forming a thin film transistor. Various plasma treatments such as other etching treatment of the film and ashing treatment of the photoresist film.

Further, the plasma processing apparatuses 1, 1a, and 1b are not limited to the substrate G for FPD, and may be used for the above-described various plasma treatments for the substrate G for solar cell panels.

Even when the metal window 3 to which the rectangular shape is distributed has the short side and the long side, the peripheral gas shower head 30c is divided into the peripheral side of the growing side and the peripheral side of the short side of the gas shower head, respectively It is also possible to use a different first distribution flow rate adjustment unit and a second distribution flow rate adjustment unit to individually adjust the flow rate of the gas.

Although the MFC is used as the first distribution flow rate adjustment units 421a to 424a and the second distribution flow rate adjustment units 421b to 424b, a pressure type flow rate controller that distributes the supplied gas in response to a specific pressure ratio and a specific flow rate are used instead. It is also possible to assign a flow controller.

G‧‧‧Processed substrate

30a, 30b, 30e‧‧‧ gas shower head

30c, 30d‧‧‧ surrounding gas shower head (gas shower head)

4a‧‧‧CF ₄ gas supply department

4b‧‧O ₂ gas supply department

4c‧‧‧Cl ₂ gas supply department

4d‧‧‧N ₂ gas supply department

4e‧‧‧halogen-added gas supply unit

4f‧‧‧SiCl ₄ gas supply department

4g‧‧‧N ₂ gas supply department

4h‧‧‧SiF ₄ gas supply department

4i‧‧O ₂ gas supply department

401‧‧‧1st distribution flow path

402‧‧‧2nd distribution flow path

41a‧‧‧1st power supply flow adjustment unit

41b‧‧‧2nd power supply flow adjustment unit

421a～424a‧‧‧1st distribution flow adjustment unit

421b～424b‧‧‧2nd distribution flow adjustment unit

43a～43d‧‧‧ gas supply pipe

5‧‧‧High frequency antenna

6‧‧‧Control Department

Fig. 1 is a first explanatory view of a substrate to be processed which is processed by a plasma processing apparatus according to an embodiment. Fig. 2 is a second explanatory view of a substrate to be processed which is processed in a plasma processing apparatus. Figure 3 is a longitudinal sectional side view of the plasma processing apparatus. Fig. 4 is a plan view of a metal window provided in the above plasma processing apparatus. Fig. 5 is a view showing a supply system for supplying an etching gas to each of the gas shower heads constituting the metal window. Fig. 6 is a first explanatory diagram relating to another substrate to be processed which is processed by the plasma processing apparatus. Fig. 7 is a second explanatory view showing the other substrates to be processed. Fig. 8 is an explanatory view of a substrate to be processed which is processed in the plasma processing apparatus according to the second embodiment. Fig. 9 is a view showing a supply system for supplying a processing gas to the plasma processing apparatus according to the second embodiment. Fig. 10 is a view showing a supply system for supplying a processing gas to the plasma processing apparatus according to the third embodiment. Fig. 11 is an explanatory view showing pressure at each position in the supply flow path of the processing gas. Fig. 12 is a graph showing the temperature-vapor pressure characteristics of SiCl ₄ gas.

Claims (11)

A plasma processing apparatus for performing plasma treatment by a plasma-treated processing gas on a substrate to be processed in a vacuum evacuated processing space, the plasma processing apparatus comprising: a processing container And comprising: a mounting table on which the substrate to be processed is placed, and a processing space for performing the plasma processing; and a plurality of gas shower heads respectively provided on a zenith surface constituting the processing space, and the zenith surface A plurality of regions formed by dividing the radial direction from the central portion side toward the peripheral portion side are formed with a gas discharge hole for supplying a processing gas to the processing space, and a plasma generating portion for discharging the head from the plurality of the plurality of shower heads The processing gas supplied to the processing space is plasma-formed; the first processing gas raw material supply unit for supplying the first processing gas raw material contained in the processing gas; and the second processing gas for supplying the second processing gas raw material a raw material supply unit; the first supply flow rate adjustment unit configured to be supplied from the first process gas raw material supply unit to the upper portion a flow rate adjustment of the first process gas raw material in the processing space; and a plurality of first distribution flow rate adjusting units respectively provided in the first process gas raw material for adjusting the flow rate of the first supply flow rate adjusting unit a plurality of first distribution channels to the plurality of gas shower heads for regulating the flow rate of the first material gas supplied to each of the gas shower heads; and a second supply flow rate adjusting unit for performing the slave The second processing gas raw material supply unit is configured to adjust the flow rate of the second processing gas raw material supplied to the processing space; and the plurality of second distributed flow rate adjusting units are provided in the second supply flow rate adjusting unit The flow rate-regulated second process gas raw material is distributed to the plurality of second distribution flow paths of the plurality of gas shower heads to adjust the flow rate of the second material gas supplied to each of the gas shower heads. The plasma processing apparatus according to claim 1, wherein in the plurality of regions formed by dividing the zenith surface in the radial direction, the annular region on the peripheral portion side is divided into a plurality of annular regions in the circumferential direction. a first peripheral flow head that is provided with a gas discharge head that supplies a gas discharge hole for the processing space to the processing space, and a first distribution flow path from which the first distribution flow rate adjustment unit is provided, and The second distribution flow path of the second distribution flow rate adjustment unit is provided, and the first process gas material and the second process gas material are distributed and supplied to each of the peripheral gas shower heads. The plasma processing apparatus according to claim 2, wherein the planar shape of the zenith surface is rectangular, and a peripheral gas shower head including the rectangular corner portion is provided in the peripheral gas shower head, and a peripheral gas shower head including the rectangular side portion between the adjacent corner portions, and the peripheral gas shower head of the corner portion is distributed and supplied from the common first and second distribution channels In the first and second processing gas raw materials, the peripheral gas shower heads of the side portions are distributed and supplied to the first and second distribution channels different from the shower heads around the corner portions. 2 process gas raw materials. The plasma processing apparatus of claim 2 or 3, wherein the exhaust port for performing vacuum evacuation in the processing space is disposed below the annular region provided with the peripheral gas shower head , or a position on the outer side of the lower position. The plasma processing apparatus according to any one of claims 1 to 3, wherein the second distribution flow path merges with the first distribution flow path on the downstream side of the first distribution flow rate adjustment unit. The plasma processing apparatus according to any one of claims 1 to 3, wherein the plasma generating portion is disposed on an upper side of the gas shower head for plasma-treating the processing gas by inductive coupling. Plasma antenna. The plurality of gas shower heads are each formed of a metal window composed of a conductive partial window, and the adjacent gas shower heads are insulated from each other. The plasma processing apparatus according to any one of claims 1 to 3, wherein the processing gas system is for etching an etching gas of an etching target film formed on a glass substrate, that is, a substrate to be processed, the second processing The gaseous material is oxygen, and is provided in the first and second distribution flow rate adjusting portions of the plurality of first and second distribution channels, and is patterned in the end portion of the photoresist film on the upper surface side of the etching target film. The flow rate of the first and second process gas raw materials is set such that the oxygen concentration of the etching gas supplied from the gas shower head at the position where the etching gas is supplied to the regions is changed in a region having a different inclination. The plasma processing apparatus according to claim 7, wherein the etching target film is a ruthenium containing film, and the first processing gas raw material is at least one of a tetrafluorocarbon gas or a trifluoro nitrogen gas, and is provided in the plural first The first and second distribution flow rate adjustment units of the second distribution flow path supply the gas at the position of the etching gas in a region larger than the inclination of the end portion of the photoresist film patterned on the upper surface side of the etching target film. In the shower head, the first and the first are performed so that the oxygen concentration of the etching gas supplied from the gas shower head where the etching gas is supplied to the region where the inclination of the end portion of the photoresist film is small is high. 2 The flow rate setting of the process gas raw material. The plasma processing apparatus according to claim 7, wherein the etching target film is a polycrystalline germanium film or a molybdenum film, and the first processing gas raw material is selected from a carbon tetrafluoride gas, sulfur hexafluoride, nitrogen trifluoride or chlorine gas. At least one of the gas is provided in the first and second distribution flow rate adjusting portions of the plurality of first and second distribution channels, and is opposite to the end of the photoresist film patterned on the upper surface side of the etching target film. a gas shower head at a position where an etching gas is supplied in a region where the inclination is small, and an oxygen of an etching gas supplied from a gas shower head at a position where an etching gas is supplied to a region where the inclination of the end portion of the photoresist film is large The flow rate of the first and second process gas raw materials is set to be higher in a higher concentration. The plasma processing apparatus according to any one of claims 1 to 3, wherein the processing gas system is for etching an aluminum film formed on a glass substrate, that is, a substrate to be processed, and an upper layer of cerium oxide The etching gas for the film, the first processing gas raw material is chlorine gas, and the second processing gas raw material is nitrogen gas and halogen-containing gas, and is provided in the first and second distribution flow rate adjusting units of the plurality of first and second distribution channels The distribution of the nitrogen gas and the halogen-containing gas of the chlorine gas in the etching gas supplied from the gas shower head located on the central portion side is smaller than that of the gas shower head located on the peripheral side of the zenith surface. The flow rate of the first and second processing gas raw materials is set separately. The plasma processing apparatus according to any one of claims 1 to 3, wherein the processing gas system is used to form a film-forming gas containing a ruthenium film formed on a glass substrate, that is, a substrate to be processed, the first The processing gas raw material is at least one of a hafnium tetrafluoride gas or a hafnium tetrachloride gas, the second processing gas raw material is nitrogen gas or oxygen gas, and the second distribution flow path is respectively on a downstream side of the first distribution flow rate adjusting unit. The first distribution flow rate adjustment unit and the first distribution flow rate adjustment unit maintain the pressure in the flow path from the first distribution flow rate adjustment unit to the first distribution flow rate adjustment unit at a lower level. The flow rate is set such that the flow rate of the vapor pressure of the first process gas raw material at the flow rate of the first process gas feedstock is at room temperature.