TW201840261A - Transparent conductive laminate and production method therefor - Google Patents

Transparent conductive laminate and production method therefor Download PDF

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TW201840261A
TW201840261A TW107110058A TW107110058A TW201840261A TW 201840261 A TW201840261 A TW 201840261A TW 107110058 A TW107110058 A TW 107110058A TW 107110058 A TW107110058 A TW 107110058A TW 201840261 A TW201840261 A TW 201840261A
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layer
transparent conductive
transparent
laminated body
resin layer
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原務
武藤豪志
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日商琳得科股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08Oxides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00Apparatus or processes specially adapted for manufacturing conductors or cables
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/02Details
    • H05B33/04Sealing arrangements, e.g. against humidity
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/10Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H05B33/28Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80Constructional details
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Abstract

The present invention provides: a transparent conductive laminate that simultaneously exhibits excellent optical properties and flexibility and that has, on a transparent base material, at least an embedded resin layer, an auxiliary electrode layer, and a transparent conductive layer, wherein the transparent conductive layer comprises a metal oxide, and the embedded resin layer has an elastic modulus at 25 DEG C of 3,000-8,000 MPa and an elastic modulus at 70 DEG C of 1,000-7,000 MPa; and a production method for the transparent conductive laminate.

Description

透明導電性積層體以及其製造方法Transparent conductive laminate and method of producing the same

本發明係有關透明導電性積層體以及其製造方法。The present invention relates to a transparent conductive laminate and a method of producing the same.

近幾年來,由於印刷電子之發展,期待日後普及之有機薄膜太陽電池或有機EL照明等為代表之主要使用有機材料之電子裝置的大面積化以外,亦進展可撓化。隨著該等電子裝置之大面積化,關於該等所利用之透明導電性膜之透明導電層亦被要求低電阻化,對於該要求,為了抑制於裝置動作(集電或電壓施加)時由於透明導電層一般具有高電阻率而產生之光電轉換效率或發光效率等之電子裝置的性能降低,於透明導電層中作為補助電極層係使用設有具有比透明導電層低的電阻值之金屬細線或金屬膏的圖型層之構造,有時於細線間或圖型層之間設置透明樹脂層。In recent years, due to the development of printed electronics, it is expected to be more flexible in terms of the large area of electronic devices mainly using organic materials, such as organic thin film solar cells or organic EL illumination, which are popular in the future. With the large area of these electronic devices, the transparent conductive layer of the transparent conductive film used for these is also required to have a low resistance. In order to suppress the device operation (collection or voltage application), The transparent conductive layer generally has a high electrical resistivity, and the performance of the electronic device such as photoelectric conversion efficiency or luminous efficiency is lowered. In the transparent conductive layer, a metal thin wire having a lower resistance value than the transparent conductive layer is used as the auxiliary electrode layer. Or the structure of the pattern layer of the metal paste, sometimes a transparent resin layer is provided between the thin lines or the pattern layer.

關於上述,於專利文獻1中,基於電子裝置之可撓性化之觀點,揭示具有彎曲性之透明導電性薄片,其係於透明基材薄片上塗佈包含透明導電性粒子與分散介質之塗佈液,並積層透明導電膜而成。又,專利文獻2中,基於要求高的透明性及低電阻化之觀點,揭示將銦-錫氧化物(ITO)等以乾式成膜法形成前述透明導電層。 [先前技術文獻] [專利文獻]In the above-mentioned Patent Document 1, a transparent conductive sheet having flexibility is disclosed on the basis of the flexibility of the electronic device, and the coating comprising the transparent conductive particles and the dispersion medium is applied to the transparent substrate sheet. The cloth is liquid and laminated with a transparent conductive film. Further, in Patent Document 2, it is disclosed that the transparent conductive layer is formed by a dry film formation method using indium-tin oxide (ITO) or the like from the viewpoint of requiring high transparency and low resistance. [Prior Technical Literature] [Patent Literature]

[專利文獻1] 日本特開2015-162355號公報   [專利文獻2] 日本特開2014-216175號公報[Patent Document 1] JP-A-2015-162355 (Patent Document 2) JP-A-2014-216175

[發明欲解決之課題][Questions to be solved by the invention]

然而,專利文獻1中,雖具有為了使用透明基材薄片之彎曲性,但由於係由塗佈包含透明導電性粒子與分散介質之塗佈液所成之透明導電膜展現導電性之構成,故關於以乾式成膜法形成之透明導電膜並無揭示。又,專利文獻2中,雖揭示以乾式成膜法於由補助電極層及透明樹脂層所成之面上形成透明導電層,但本發明人等進一步檢討之結果,發現除了因成膜時之溫度上升,亦因以乾式成膜法形成之膜具有的強應力,結果,於透明導電層表面發生凹凸,而有光學特性降低例如濁度值大為增加之問題。However, in Patent Document 1, although the transparency of the transparent base sheet is used, since the transparent conductive film formed by applying the coating liquid containing the transparent conductive particles and the dispersion medium exhibits conductivity, it is a structure. The transparent conductive film formed by the dry film formation method is not disclosed. Further, in Patent Document 2, a transparent conductive layer is formed on the surface formed by the auxiliary electrode layer and the transparent resin layer by a dry film formation method. However, as a result of further examination by the inventors, it was found that, in addition to film formation, The temperature rise is also caused by the strong stress of the film formed by the dry film formation method, and as a result, irregularities occur on the surface of the transparent conductive layer, and there is a problem that the optical characteristics are lowered, for example, the haze value is greatly increased.

本發明係鑒於上述問題,課題在於提供同時具有優異光學特性及彎曲性之透明導電性積層體。 [用以解決課題之手段]The present invention has been made in view of the above problems, and it is an object of the invention to provide a transparent conductive laminate having both excellent optical characteristics and flexibility. [Means to solve the problem]

本發明人等為解決上述課題而重複積極檢討之結果,發現藉由將補助電極層之開口部或開口部及補助電極層上部所設之埋入樹脂層之彈性率控制在特定值之範圍,而可具有彎曲性並且可抑制藉由乾式成膜法形成之透明導電層的濁度增加,因而完成本發明。   亦即,本發明提供以下之(1)~(13)者。   (1) 一種透明導電性積層體,其係在透明基材上至少包含埋入樹脂層、補助電極層及透明導電層之透明導電性積層體,且前述透明導電層係由金屬氧化物而成,前述埋入樹脂層在25℃下之彈性率為3000~8000MPa,且在70℃下之彈性率為1000~7000MPa。   (2) 如上述(1)之透明導電性積層體,其中前述埋入樹脂層之玻璃轉移溫度為90℃以上。   (3) 如上述(1)或(2)之透明導電性積層體,其中前述埋入樹脂層之膜厚為0.1~100μm。   (4) 如上述(1)~(3)中任1項之透明導電性積層體,其中前述透明導電性積層體進一步在與前述埋入樹脂層之透明導電層相反之面上包含黏著層。   (5) 如上述(4)之透明導電性積層體,其中前述黏著層之玻璃轉移溫度為40℃以上。   (6) 如上述(4)或(5)之透明導電性積層體,其中前述黏著層之膜厚為1~120μm。   (7) 如上述(4)~(6)中任1項之透明導電性積層體,其中前述黏著層在25℃下之彈性率為100~3000MPa。   (8) 如上述(1)~(7)中任1項之透明導電性積層體,其中前述透明導電性積層體進一步在透明基材上包含透明氣體障蔽層。   (9) 如上述(8)之透明導電性積層體,其中前述透明導電性積層體進一步在前述埋入樹脂層與透明氣體障蔽層之間包含黏著層。   (10) 如上述(1)之透明導電性積層體,其中前述金屬氧化物以濺鍍法成膜。   (11) 一種太陽電池元件或有機電致發光元件,其係具有如上述(1)~(10)中任1項之透明導電性積層體。   (12) 一種透明導電性積層體之製造方法,其係在透明基材上至少包含埋入樹脂層、補助電極層及透明導電層,且該透明導電層係由金屬氧化物而成,前述埋入樹脂層在25℃下之彈性率為3000~8000MPa,且在70℃下之彈性率為1000~7000MPa之透明導電性積層體之製造方法,且包含:   形成前述補助電極層之步驟、   在該補助電極層之開口部、或補助電極層上及開口部形成前述埋入樹脂層之步驟、及   形成前述透明導電層之步驟。   (13) 如上述(12)之透明導電性積層體之製造方法,其中進一步包含形成黏著層之步驟及/或形成透明氣體障蔽層之步驟。 [發明效果]As a result of repeating the positive review, the present inventors have found that the elastic modulus of the embedded resin layer provided in the opening portion or the opening portion of the auxiliary electrode layer and the upper portion of the auxiliary electrode layer is controlled within a specific value range. Further, the present invention can be completed by having flexibility and suppressing an increase in turbidity of a transparent conductive layer formed by a dry film formation method. That is, the present invention provides the following (1) to (13). (1) A transparent conductive laminated body comprising at least a transparent conductive laminated body in which a resin layer, a supplementary electrode layer, and a transparent conductive layer are embedded on a transparent substrate, wherein the transparent conductive layer is made of a metal oxide The embedding resin layer has an elastic modulus at 25 ° C of 3000 to 8000 MPa and an elastic modulus at 70 ° C of 1000 to 7000 MPa. (2) The transparent conductive laminated body according to (1) above, wherein the glass transition temperature of the embedded resin layer is 90 °C or higher. (3) The transparent conductive laminate according to (1) or (2) above, wherein the thickness of the embedded resin layer is 0.1 to 100 μm. (4) The transparent conductive laminated body according to any one of (1) to (3), wherein the transparent conductive laminated body further includes an adhesive layer on a surface opposite to the transparent conductive layer embedded in the resin layer. (5) The transparent conductive laminated body according to (4) above, wherein the adhesive layer has a glass transition temperature of 40 ° C or higher. (6) The transparent conductive laminate according to (4) or (5) above, wherein the thickness of the adhesive layer is from 1 to 120 μm. (7) The transparent conductive laminated body according to any one of the above (4), wherein the adhesive layer has an elastic modulus at 25 ° C of 100 to 3000 MPa. (8) The transparent conductive laminated body according to any one of the above (1), wherein the transparent conductive laminated body further includes a transparent gas barrier layer on the transparent substrate. (9) The transparent conductive laminated body according to (8) above, wherein the transparent conductive laminated body further includes an adhesive layer between the embedded resin layer and the transparent gas barrier layer. (10) The transparent conductive laminated body according to (1) above, wherein the metal oxide is formed by sputtering. (11) A solar cell element or an organic electroluminescence device comprising the transparent electroconductive laminate according to any one of the above (1) to (10). (12) A method for producing a transparent conductive laminated body comprising at least a buried resin layer, a supplementary electrode layer, and a transparent conductive layer on a transparent substrate, wherein the transparent conductive layer is made of a metal oxide, and the buried a method for producing a transparent conductive laminated body having an elastic modulus of from 3,000 to 8,000 MPa at 25 ° C and an elastic modulus of from 1,000 to 7,000 MPa at 70 ° C, and comprising: a step of forming the auxiliary electrode layer, The step of forming the buried resin layer on the opening of the auxiliary electrode layer, the step of forming the buried resin layer on the auxiliary electrode layer and the opening, and the step of forming the transparent conductive layer. (13) The method for producing a transparent conductive laminate according to the above (12), which further comprises the step of forming an adhesive layer and/or the step of forming a transparent gas barrier layer. [Effect of the invention]

依據本發明,可提供同時具有優異光學特性及彎曲性之透明導電性積層體。According to the present invention, it is possible to provide a transparent conductive laminate having both excellent optical characteristics and flexibility.

[透明導電性積層體]   本發明之透明導電性積層體係在透明基材上至少包含埋入樹脂層、補助電極層及透明導電層之透明導電性積層體,且前述透明導電層係由金屬氧化物而成,前述埋入樹脂層在25℃下之彈性率為3000~8000MPa,且在70℃下之彈性率為1000~7000MPa。   藉由將前述埋入樹脂之25℃及70℃下之彈性率控制在上述範圍,可抑制透明導電層形成前後之起因於乾式成膜法的溫度上升、因藉乾式成膜法形成的膜應力等而產生之透明導電層表面之凹凸所致之濁度增加,而可獲得維持了彎曲性並且光學特性優異之透明導電性積層體。   又,本發明中,將「透明導電性積層體」與「透明導電積層體」予以區別使用。所謂「透明導電積層體」意指於本發明之「透明導電性積層體」構成中,不含透明導電層之積層體。   針對本發明之透明導電性積層體之構成使用圖式加以說明。[Transparent Conductive Laminated Body] The transparent conductive laminated layer of the present invention comprises at least a transparent conductive laminated body in which a resin layer, a supplementary electrode layer, and a transparent conductive layer are embedded on a transparent substrate, and the transparent conductive layer is oxidized by metal The embedded resin layer has an elastic modulus at 25 ° C of 3000 to 8000 MPa and an elastic modulus at 70 ° C of 1000 to 7000 MPa. By controlling the elastic modulus at 25 ° C and 70 ° C of the embedded resin in the above range, it is possible to suppress the temperature rise due to the dry film formation method and the film stress formed by the dry film formation method before and after the formation of the transparent conductive layer. The turbidity due to the unevenness of the surface of the transparent conductive layer generated by the increase is increased, and a transparent conductive laminate which maintains the bendability and is excellent in optical characteristics can be obtained. Further, in the present invention, the "transparent conductive laminated body" and the "transparent conductive laminated body" are used differently. The "transparent conductive laminated body" means a laminated body which does not contain a transparent conductive layer in the "transparent conductive laminated body" of the present invention. The configuration of the transparent conductive laminate of the present invention will be described using a schematic diagram.

圖1係顯示本發明之透明導電性積層體的構成之一例的剖面圖。透明導電性積層體1A係於透明基材2上積層埋入樹脂層3、補助電極4及透明導電層5而構成者。補助電極層4於鄰接之補助電極層4彼此間具有開口部9,埋入樹脂層3存在於開口部9及補助電極層4上。   同樣,圖2係顯示本發明之透明導電性積層體的構成之另一例的剖面圖。透明導電性積層體1B係於透明基材2上介隔底塗層6積層透明氣體障蔽層7、黏著層8、埋入樹脂層3、補助電極4及透明導電層5而構成者。補助電極層4於鄰接之補助電極層4彼此間具有開口部9,埋入樹脂層3存在於開口部9及補助電極層4上。   上述中,埋入樹脂層3亦可僅存在於開口部9。Fig. 1 is a cross-sectional view showing an example of a configuration of a transparent conductive laminate of the present invention. The transparent conductive laminated body 1A is formed by laminating the resin layer 3, the auxiliary electrode 4, and the transparent conductive layer 5 on the transparent substrate 2. The auxiliary electrode layer 4 has an opening 9 between the adjacent auxiliary electrode layers 4, and the embedded resin layer 3 is present on the opening 9 and the auxiliary electrode layer 4. Similarly, Fig. 2 is a cross-sectional view showing another example of the configuration of the transparent conductive laminated body of the present invention. The transparent conductive laminated body 1B is formed by interposing the undercoat layer 6 on the transparent substrate 2 with the transparent gas barrier layer 7 , the adhesive layer 8 , the embedded resin layer 3 , the auxiliary electrode 4 , and the transparent conductive layer 5 . The auxiliary electrode layer 4 has an opening 9 between the adjacent auxiliary electrode layers 4, and the embedded resin layer 3 is present on the opening 9 and the auxiliary electrode layer 4. In the above, the buried resin layer 3 may be present only in the opening portion 9.

(基材)   本發明所用之透明基材並未特別限定,只要根據使用之裝置等適當選擇即可,例如若為柔軟性且於可見光區域具有高的透過率則未特別限定,舉例為可撓性玻璃、樹脂膜等。作為樹脂膜的材料舉例為聚醯亞胺、聚醯胺、聚醯胺醯亞胺、聚苯醚、聚醚酮、聚醚醚酮、聚烯烴、聚酯、聚碳酸酯、聚碸、聚醚碸、聚苯硫醚、聚芳酸酯、丙烯酸系樹脂、環烯烴系寡聚物、環烯烴系聚合物、芳香族系聚合物、聚胺基甲酸酯系聚合物等。   該等中,作為聚酯舉例為聚對苯二甲酸乙二酯(PET)、聚對苯二甲酸丁二酯、聚萘二甲酸乙二酯(PEN)、聚芳酸酯等。且,作為環烯烴系聚合物舉例為降冰片烯系聚合物、單環之環狀烯烴系聚合物、環狀共軛二烯系聚合物、乙烯脂環式烴聚合物及該等之氫化物。例如作為環烯烴系聚合物工業上舉例為APEL(三井化學公司製,乙烯-環烯烴共聚物)、ARTON(JSR公司製,降冰片烯共聚物)、ZEONOR(日本ZEON公司製,降冰片烯系共聚物)等。該等透明基材中,基於處理性之觀點,特佳為雙軸延伸之聚對苯二甲酸乙二酯(PET)、聚萘二甲酸乙二酯(PEN)。基於光學等向性之觀點,特佳為環烯烴系聚合物或環烯烴系寡聚物。基於耐熱性之觀點,特佳為聚醯亞胺。   因處理性優異,本發明之透明導電性積層體之製造變容易,且光學等向性優異,故將本發明之透明導電性積層體使用於顯示裝置時可較好地使用。   透明基材之厚度較好為1~1000μm,更好為5~250μm,又更好為10~200μm。若為該範圍,則可確保作為基材之機械強度、透明性。(Substrate) The transparent substrate to be used in the present invention is not particularly limited, and may be appropriately selected depending on the device to be used, and the like, for example, is flexible and has a high transmittance in the visible light region, and is not particularly limited. Glass, resin film, etc. The material of the resin film is exemplified by polyimine, polyamine, polyamidamine, polyphenylene ether, polyether ketone, polyetheretherketone, polyolefin, polyester, polycarbonate, polyfluorene, poly Ether oxime, polyphenylene sulfide, polyarylate, acrylic resin, cycloolefin oligomer, cycloolefin polymer, aromatic polymer, polyurethane polymer, and the like. Among these, examples of the polyester include polyethylene terephthalate (PET), polybutylene terephthalate, polyethylene naphthalate (PEN), polyarylate, and the like. Further, examples of the cycloolefin polymer include a norbornene-based polymer, a monocyclic cyclic olefin polymer, a cyclic conjugated diene polymer, a vinyl alicyclic hydrocarbon polymer, and the like. . For example, as a cycloolefin polymer, APEL (manufactured by Mitsui Chemicals Co., Ltd., ethylene-cycloolefin copolymer), ARTON (manufactured by JSR Corporation, norbornene copolymer), and ZEONOR (manufactured by Nippon Zeon Co., Ltd., norbornene) are exemplified. Copolymer) and the like. Among these transparent substrates, polyethylene terephthalate (PET) and polyethylene naphthalate (PEN) which are biaxially stretched are particularly preferable from the viewpoint of handleability. From the viewpoint of optical isotropic properties, a cycloolefin polymer or a cycloolefin oligomer is particularly preferred. From the viewpoint of heat resistance, it is particularly preferred to be a polyimine. Since the transparent conductive laminated body of the present invention is easy to manufacture and excellent in optical isotropic properties, the transparent conductive laminated body of the present invention can be preferably used in a display device. The thickness of the transparent substrate is preferably from 1 to 1000 μm, more preferably from 5 to 250 μm, still more preferably from 10 to 200 μm. If it is this range, the mechanical strength and transparency of a base material can be ensured.

(補助電極層)   本發明所用之補助電極層係為了使本發明之透明導電性積層體的透明導電層之薄片電阻值降低而設置者。且,通常為了抑制透明導電層之光線透過率之降低,而圖型化設置開口部。(Substituting electrode layer) The auxiliary electrode layer used in the present invention is provided in order to lower the sheet resistance value of the transparent conductive layer of the transparent conductive laminated body of the present invention. Further, in order to suppress the decrease in the light transmittance of the transparent conductive layer, the opening portion is usually patterned.

補助電極層之材料並未特別限制,但較好使用光微影法等之方法進行圖型化。該情況下,補助電極層之材料可舉例為金、銀、銅、鋁、鎂、鎳、鉑、鈀等之單金屬、銀-鈀、銀-銅、銀-鎂、鋁-矽、鋁-銀、鋁-銅、鋁-鈦-鈀等之二元至三元系的鋁合金等。該等材料中,基於比電阻值之觀點,較好為銀、銅、鋁及鋁合金,基於成本、蝕刻性、耐腐蝕性之觀點,更好為銅、鋁合金。The material of the auxiliary electrode layer is not particularly limited, but it is preferably patterned by a method such as photolithography. In this case, the material of the auxiliary electrode layer can be exemplified by a single metal such as gold, silver, copper, aluminum, magnesium, nickel, platinum, palladium, etc., silver-palladium, silver-copper, silver-magnesium, aluminum-niobium, aluminum- A binary to ternary aluminum alloy such as silver, aluminum-copper, aluminum-titanium-palladium or the like. Among these materials, silver, copper, aluminum, and aluminum alloy are preferred from the viewpoint of specific resistance, and copper, aluminum alloy is more preferable from the viewpoint of cost, etching property, and corrosion resistance.

又,作為補助電極層之材料,可使用包含導電性材料之導電膏。作為導電膏並未特別限定,但可使用例如於溶劑中分散金屬微粒子、碳、氧化釕等之導電性微粒子或金屬奈米線、碳奈米管等之導電性碳材料者,亦可進而含有黏合劑成分,亦可混合2種以上之導電膏而使用。將該導電膏進行印刷、燒成或硬化,而可獲得補助電極層。Further, as the material of the auxiliary electrode layer, a conductive paste containing a conductive material can be used. The conductive paste is not particularly limited, and for example, a conductive fine particle such as metal fine particles, carbon or cerium oxide, or a conductive carbon material such as a metal nanowire or a carbon nanotube may be used in a solvent, and may further contain The adhesive component may be used by mixing two or more kinds of conductive pastes. The conductive paste is printed, fired or hardened to obtain a supplementary electrode layer.

作為上述金屬微粒子之材質並未特別限定,但可舉例為由前述之單金屬及合金所成之材質。基於導電性之觀點,較好為銀、銅、鋁等。基於耐腐蝕性或耐藥品性之方面,較好為鉑、銠、釕、鈀等,該等金屬亦可包含1種或2種以上。又,基於成本之觀點,亦可使用於表層被覆銀之銅微粒子,或基於柔軟性之觀點,亦可使用如於表層被覆銀之樹脂粒子之複合微粒子。金屬奈米線材料並未特別限定,可舉例為銀奈米線、銅奈米線、鎳奈米線、矽奈米線等。   導電性碳材料就導電性方面雖比金屬差,但價格低,耐腐蝕性及耐藥品性優異。作為導電性碳材料並未特別限定,可舉例為乙炔黑、科琴黑、油爐黑、導電性單層碳奈米管、導電性多層碳奈米管、石墨烯粉末等。且,氧化釕(RuO2 )微粒子與導電性碳材料相比雖價格高,但由於係具有優異耐腐蝕性之導電性物質,故可使用作為補助電極層。The material of the metal fine particles is not particularly limited, and examples thereof include materials made of the above-described single metal and alloy. From the viewpoint of conductivity, silver, copper, aluminum, or the like is preferable. The platinum, ruthenium, osmium, palladium or the like is preferably used in terms of corrosion resistance or chemical resistance, and the metal may be contained in one type or two or more types. Further, from the viewpoint of cost, it is also possible to use copper fine particles coated with silver on the surface layer, or to use composite fine particles such as silver-coated resin particles on the surface layer from the viewpoint of flexibility. The metal nanowire material is not particularly limited, and examples thereof include a silver nanowire, a copper nanowire, a nickel nanowire, and a nanowire. The conductive carbon material is inferior in conductivity to metal, but is inexpensive, and is excellent in corrosion resistance and chemical resistance. The conductive carbon material is not particularly limited, and examples thereof include acetylene black, ketjen black, oil furnace black, conductive single-layer carbon nanotubes, conductive multilayer carbon nanotubes, and graphene powder. Further, although the ruthenium oxide (RuO 2 ) fine particles are expensive compared with the conductive carbon material, they are used as the auxiliary electrode layer because they are conductive materials having excellent corrosion resistance.

補助電極層可為單層亦可為多層構造。作為多層構造,可為由同種材料所成之層積層而成之多層構造,亦可為由2種以上材料所成之層積層而成之多層構造。   作為多層構造,更好為由不同材料所成之層積層而成之2層構造。作為此種多層構造,若為例如最初先形成銀的圖型層,自其上形成銅的圖型層,則可邊保持銀的高導電性並且改善耐腐蝕性故而較佳。   且,作為改善光學特性之目的,亦可對於所形成之補助電極層施以化學處理。例如,以抗反射為目的,舉例為對以銅為主的補助電極層進行黑化處理等。藉由施以黑化處理,於將本發明之透明導電性積層體使用於顯示裝置或照明裝置時,可實現對比度之提高。The auxiliary electrode layer may be a single layer or a multilayer structure. The multilayer structure may have a multilayer structure in which a layer of the same material is laminated, or a multilayer structure in which two or more layers are laminated. As a multilayer structure, it is better to have a two-layer structure in which layers are formed of different materials. As such a multilayer structure, for example, a pattern layer in which silver is initially formed, and a pattern layer in which copper is formed thereon can be preferably maintained while maintaining high conductivity of silver and improving corrosion resistance. Further, as a purpose of improving optical characteristics, a chemical treatment may be applied to the formed auxiliary electrode layer. For example, for the purpose of antireflection, for example, a copper-based auxiliary electrode layer is subjected to blackening treatment or the like. By applying the blackening treatment, when the transparent conductive laminated body of the present invention is used for a display device or an illuminating device, the contrast can be improved.

作為本發明所用之補助電極層的圖型並未特別限定,舉例為格子狀、蜂窩狀、梳齒狀、帶狀(條狀)、直線狀、曲線狀、波浪狀(正弦曲線等)、多邊形狀之網眼狀、圓形狀之網眼狀、橢圓狀之網眼狀、不規則形等。該等中,較好為格子狀、蜂窩狀、梳齒狀者。The pattern of the auxiliary electrode layer used in the present invention is not particularly limited, and examples thereof include a lattice shape, a honeycomb shape, a comb shape, a strip shape (strip shape), a linear shape, a curved shape, a wave shape (sinusoidal curve, etc.), and a polygon. Mesh-like, round-shaped mesh, elliptical mesh, irregular shape, etc. Among these, it is preferably a lattice shape, a honeycomb shape, or a comb shape.

補助電極層之厚度較好為10nm~20μm,更好為100nm~15μm,又更好為1μm~10μm。   作為補助電極層之圖型開口部(未形成補助電極層之部份)的開口率,基於透明性(光線透過率)之觀點,較好為80%以上且未達100%,更好為85%以上且未達99%,又更好為90%以上且未達98%。又,所謂開口率係開口部總面積相對於形成包含開口部的補助電極層之圖型的全部區域面積之比例。   補助電極層之線寬較好為0.1~100μm,更好為1~80 μm,又更好為5~60μm。線寬若為該範圍內,則開口率廣,可確保透過率,進而獲得安定之低電阻透明導電性積層體,故而較佳。The thickness of the auxiliary electrode layer is preferably from 10 nm to 20 μm, more preferably from 100 nm to 15 μm, still more preferably from 1 μm to 10 μm. The aperture ratio of the pattern opening portion (the portion where the auxiliary electrode layer is not formed) of the auxiliary electrode layer is preferably 80% or more and less than 100%, more preferably 85, from the viewpoint of transparency (light transmittance). More than % and less than 99%, and more preferably more than 90% and less than 98%. Further, the aperture ratio is a ratio of the total area of the opening to the area of the entire area in which the pattern of the auxiliary electrode layer including the opening is formed. The line width of the auxiliary electrode layer is preferably from 0.1 to 100 μm, more preferably from 1 to 80 μm, still more preferably from 5 to 60 μm. When the line width is within this range, the aperture ratio is wide, the transmittance is ensured, and a stable low-resistance transparent conductive laminate is obtained, which is preferable.

(埋入樹脂層)   本發明所用之埋入樹脂層係為了抑制因透明導電層之成膜時之溫度上升及膜的應力緩和所致之透明導電性積層體的透明導電層表面之凹凸發生、展現補助電極層之轉印性提高及彎曲性所用者。(Embedded resin layer) The embedded resin layer used in the present invention is for suppressing the occurrence of irregularities on the surface of the transparent conductive layer of the transparent conductive laminate due to temperature rise during film formation of the transparent conductive layer and stress relaxation of the film. It is used to show the improvement in transferability and flexibility of the auxiliary electrode layer.

埋入樹脂層之25℃下之彈性率為3000~8000 MPa,且在70℃下之彈性率為1000~7000MPa。25℃下之彈性率若未滿3000MPa,則補助電極層之轉印性差,故無法形成使用轉印步驟之透明導電性積層體。25℃下之彈性率若超過8000MPa,則彎曲性降低。且,70℃下之彈性率若未滿1000MPa,則以乾式成膜時之熱履歷引起之熱收縮及透明導電層之膜應力為要因而容易於埋入樹脂表面發生凹凸,濁度亦上升,而容易於透明導電層發生龜裂。70℃下之彈性率若超過7000MPa,則無法充分抑制成膜後之透明導電層之應力緩和,而有發生透明導電層剝離之情況。   25℃下之彈性率較好為3300~7900MPa,更好為3500~ 7500MPa,又更好為3600~7300MPa。   70℃下之彈性率較好為1100~6700MPa,更好為1200~ 6500MPa,又更好為1300~6400MPa。若25℃下之彈性率及70℃下之彈性率於上述範圍內,則提高補助電極層之轉印性,同時可抑制成膜後之透明導電層之應力緩和,可獲得濁度上升受抑制且具有優異光學特性之透明導電性積層體。The elastic modulus at 25 ° C of the embedded resin layer is 3000 to 8000 MPa, and the elastic modulus at 70 ° C is 1000 to 7000 MPa. When the modulus of elasticity at 25 ° C is less than 3000 MPa, the transfer property of the auxiliary electrode layer is poor, so that the transparent conductive layered body using the transfer step cannot be formed. When the modulus at 25 ° C exceeds 8000 MPa, the bendability is lowered. In addition, if the modulus of elasticity at 70 ° C is less than 1000 MPa, the heat shrinkage caused by the heat history of the dry film formation and the film stress of the transparent conductive layer are likely to cause unevenness in the surface of the resin, and the turbidity also increases. It is easy to crack the transparent conductive layer. When the modulus at 70 ° C exceeds 7,000 MPa, the stress relaxation of the transparent conductive layer after film formation cannot be sufficiently suppressed, and the transparent conductive layer may be peeled off. The elastic modulus at 25 ° C is preferably from 3,300 to 7,900 MPa, more preferably from 3,500 to 7,500 MPa, and even more preferably from 3,600 to 7,300 MPa. The elastic modulus at 70 ° C is preferably from 1100 to 6700 MPa, more preferably from 1200 to 6500 MPa, and even more preferably from 1300 to 6400 MPa. When the modulus of elasticity at 25 ° C and the modulus of elasticity at 70 ° C are within the above range, the transfer property of the auxiliary electrode layer is improved, and the stress relaxation of the transparent conductive layer after film formation can be suppressed, and the increase in turbidity can be suppressed. A transparent conductive laminate having excellent optical properties.

前述埋入樹脂層之玻璃轉移溫度較好為90℃以上,更好為110℃以上,又更好為130℃以上。埋入樹脂層之玻璃轉移溫度若為該範圍內,則可將70℃之彈性率維持於前述範圍內。   前述埋入樹脂層之厚度較好為0.1~100μm,更好為1~80μm,又更好為5~60μm。埋入樹脂層之膜厚為該範圍內,彈性率為本發明範圍內時,可抑制成膜後之透明導電層之應力緩和,而可埋入補助電極層。The glass transition temperature of the buried resin layer is preferably 90 ° C or higher, more preferably 110 ° C or higher, and still more preferably 130 ° C or higher. When the glass transition temperature of the embedded resin layer is within this range, the elastic modulus at 70 ° C can be maintained within the above range. The thickness of the buried resin layer is preferably from 0.1 to 100 μm, more preferably from 1 to 80 μm, still more preferably from 5 to 60 μm. When the film thickness of the embedded resin layer is within this range and the elastic modulus is within the range of the present invention, stress relaxation of the transparent conductive layer after film formation can be suppressed, and the auxiliary electrode layer can be buried.

本發明所用之埋入樹脂層,只要前述彈性率在本發明範圍內則未特別限制,但基於即使高溫時亦獲得高彈性率之觀點,則亦可由包含無機微粒子之透明樹脂組成物所成。又,亦可不含無機微粒子。具體而言,於包含無機微粒子時,可為使以下之能量線感應型組成物硬化而成者。   能量線感應型組成物包含(i)能量線硬化型化合物,(ii)無機微粒子,(iii)光聚合起始劑。藉由對於該能量線感應型組成物照射能量線,可交聯、硬化。   又,該組成物中,在不損及本發明效果之範圍內,可包含紫外線吸收劑、光安定劑、抗氧化劑、紅外線吸收劑、抗靜電劑、調平劑、消泡劑等之添加劑。   又,本發明中,所謂「能量線」意指紫外線或電子束等之電磁波或帶電粒子束中具有能量量子者。The embedding resin layer used in the present invention is not particularly limited as long as the elastic modulus is within the range of the present invention, but may be formed from a transparent resin composition containing inorganic fine particles from the viewpoint of obtaining a high elastic modulus even at a high temperature. Further, inorganic fine particles may not be contained. Specifically, when inorganic fine particles are contained, the following energy ray-sensitive composition can be cured. The energy ray-inducing composition contains (i) an energy ray-curable compound, (ii) inorganic fine particles, and (iii) a photopolymerization initiator. By irradiating the energy ray to the energy ray-inductive composition, it is possible to crosslink and harden. Further, the composition may contain an additive such as an ultraviolet absorber, a light stabilizer, an antioxidant, an infrared absorber, an antistatic agent, a leveling agent, or an antifoaming agent, within a range not impairing the effects of the present invention. In the present invention, the term "energy line" means an electromagnetic wave such as an ultraviolet ray or an electron beam or an energy quantum beam in a charged particle beam.

(i)能量線硬化型化合物   作為能量線硬化型化合物,較好為多官能性(甲基)丙烯酸酯系單體及/或(甲基)丙烯酸酯系預聚物,更好為多官能性(甲基)丙烯酸酯系單體。   又本發明中,所謂(甲基)丙烯酸酯意指丙烯酸酯及甲基丙烯酸酯兩者,其他類似用語亦相同。(i) The energy ray-curable compound is an energy ray-curable compound, preferably a polyfunctional (meth) acrylate monomer and/or a (meth) acrylate prepolymer, and more preferably polyfunctional. (Meth) acrylate monomer. In the present invention, the term "(meth)acrylate" means both acrylate and methacrylate, and other similar terms are also the same.

作為多官能性(甲基)丙烯酸酯系單體舉例為1,4-丁二醇二(甲基)丙烯酸酯、1,6-己二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、聚乙二醇二(甲基)丙烯酸酯、羥基特戊酸新戊二醇二(甲基)丙烯酸酯、二環戊基二(甲基)丙烯酸酯、己內酯改質二環戊烯基二(甲基)丙烯酸酯、環氧乙烷改質磷酸二(甲基)丙烯酸酯、烯丙基化環己基二(甲基)丙烯酸酯、異氰脲酸酯二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、二季戊四醇三(甲基)丙烯酸酯、丙酸改質二季戊四醇三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、環氧丙烷改質三羥甲基丙烷三(甲基)丙烯酸酯、三(丙烯醯氧基)異氰脲酸酯、丙酸改質二季戊四醇五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、己內酯改質二季戊四醇六(甲基)丙烯酸酯等。   又,該等單體可單獨使用或可組合2種以上使用。Examples of the polyfunctional (meth)acrylate monomer are 1,4-butanediol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, and neopentyl glycol. (Meth) acrylate, polyethylene glycol di(meth) acrylate, hydroxypivalic acid neopentyl glycol di(meth) acrylate, dicyclopentyl di(meth) acrylate, caprolactone Modified dicyclopentenyl di(meth) acrylate, ethylene oxide modified di(meth) acrylate, allylated cyclohexyl di (meth) acrylate, isocyanurate II (Meth) acrylate, trimethylolpropane tri(meth) acrylate, dipentaerythritol tri(meth) acrylate, propionic acid modified dipentaerythritol tri(meth) acrylate, pentaerythritol tri (methyl) Acrylate, propylene oxide modified trimethylolpropane tri (meth) acrylate, tris(propylene decyloxy) isocyanurate, propionic acid modified dipentaerythritol penta (meth) acrylate, dipentaerythritol Hexa(meth)acrylate, caprolactone-modified dipentaerythritol hexa(meth)acrylate, and the like. Further, these monomers may be used singly or in combination of two or more.

作為(甲基)丙烯酸酯系預聚物舉例為例如聚酯(甲基)丙烯酸酯系預聚物、環氧基(甲基)丙烯酸酯系預聚物、胺基甲酸酯(甲基)丙烯酸酯系預聚物、多元醇(甲基)丙烯酸酯系預聚物等。   聚酯(甲基)丙烯酸酯系預聚物可藉由例如使多元羧酸與多元醇縮合而得之於兩末端具有羥基之聚酯寡聚物之羥基以(甲基)丙烯酸酯化而獲得。或者,可藉由使對多元羧酸加成環氧烷所得之寡聚物之末端羥基以(甲基)丙烯酸酯化而獲得。   環氧丙烯酸酯系預聚物可藉由例如使比較低分子量之雙酚型環氧樹脂或酚醛清漆型環氧樹脂之環氧乙烷環與(甲基)丙烯酸反應並酯化而獲得。   胺基甲酸酯丙烯酸酯系預聚物可藉由例如使聚醚多元醇或聚酯多元醇與聚異氰酸酯反應而獲得之於兩末端具有羥基之聚胺基甲酸酯寡聚物以(甲基)丙烯酸酯化而獲得。   多元醇丙烯酸酯系預聚物可藉由使聚醚多元醇之羥基以(甲基)丙烯酸酯化而獲得。   又,該等預聚物可單獨使用或可組合2種以上使用,亦可與前述多官能性(甲基)丙烯酸酯系單體併用。The (meth) acrylate type prepolymer is exemplified by, for example, a polyester (meth) acrylate prepolymer, an epoxy (meth) acrylate prepolymer, and a urethane (methyl). An acrylate prepolymer, a polyol (meth) acrylate prepolymer, or the like. The polyester (meth) acrylate type prepolymer can be obtained by (meth) acrylating a hydroxyl group of a polyester oligo having a hydroxyl group at both terminals by condensing a polyvalent carboxylic acid with a polyhydric alcohol, for example. . Alternatively, it can be obtained by (meth)acrylating a terminal hydroxyl group of an oligomer obtained by adding an alkylene oxide to a polyvalent carboxylic acid. The epoxy acrylate-based prepolymer can be obtained, for example, by reacting and esterifying an oxirane ring of a relatively low molecular weight bisphenol type epoxy resin or a novolak type epoxy resin with (meth)acrylic acid. The urethane acrylate-based prepolymer can be obtained by reacting a polyether polyol or a polyester polyol with a polyisocyanate to obtain a polyurethane oligopolymer having a hydroxyl group at both terminals. Obtained by acylation. The polyol acrylate-based prepolymer can be obtained by (meth)acrylizing a hydroxyl group of a polyether polyol. Further, these prepolymers may be used singly or in combination of two or more kinds thereof, or may be used in combination with the above-mentioned polyfunctional (meth) acrylate monomer.

(ii)無機微粒子   本發明所用之無機微粒子並未特別限制,可在不損及透明導電性積層體之全光線透過率降低(濁度增加)等之該透明導電性積層體之基本特性之範圍內選擇,舉例為氧化矽微粒子、氧化鈦微粒子、氧化鋁微粒子、碳酸鈣微粒子。該無機微粒子中,基於與(i)能量線硬化型化合物形成強固結合之觀點,較好為以具有可與該能量線硬化型化合物反應之聚合性不飽和基之有機化合物進行表面修飾之氧化矽微粒子。   以具有聚合性不飽和基之有機化合物進行表面修飾之氧化矽微粒子可藉由使氧化矽微粒子之表面矽烷醇基與具有可與該矽烷醇基反應之官能基之含聚合性不飽和基之有機化合物反應而獲得。   又,本發明中,修飾無機微粒子表面之具有聚合性不飽和基之有機化合物係作為(ii)無機微粒子之構成要素而包含者,與上述之(i)能量線硬化型化合物有所區別。(ii) Inorganic fine particles The inorganic fine particles used in the present invention are not particularly limited, and the basic characteristics of the transparent conductive laminated body can be reduced without impairing the total light transmittance (increased turbidity) of the transparent conductive laminated body. The internal selection is exemplified by cerium oxide microparticles, titanium oxide microparticles, alumina microparticles, and calcium carbonate microparticles. Among the inorganic fine particles, cerium oxide surface-modified with an organic compound having a polymerizable unsaturated group reactive with the energy ray-curable compound is preferred from the viewpoint of forming a strong bond with the (i) energy ray-curable compound. Microparticles. The cerium oxide microparticles surface-modified with an organic compound having a polymerizable unsaturated group can be organically obtained by reacting a surface stanol group of cerium oxide microparticles with a polymerizable unsaturated group having a functional group reactive with the stanol group. The compound is obtained by reaction. Further, in the present invention, the organic compound having a polymerizable unsaturated group on the surface of the inorganic fine particles is modified as a component of (ii) inorganic fine particles, and is distinguished from the above (i) energy ray-curable compound.

作為具有可與該矽烷醇基反應之官能基之含聚合性不飽和基之有機化合物較好為例如下述通式(1)表示之化合物等。The organic compound containing a polymerizable unsaturated group having a functional group reactive with the stanol group is preferably a compound represented by the following formula (1).

(式中,R1 為氫原子或甲基,R2 為鹵原子或以下述式表示之基)。 (wherein R 1 is a hydrogen atom or a methyl group, and R 2 is a halogen atom or a group represented by the following formula).

作為此等有機化合物,舉例為例如(甲基)丙烯酸氯化物、(甲基)丙烯酸2-異氰酸酯基乙酯、(甲基)丙烯酸縮水甘油酯、(甲基)丙烯酸2,3-亞胺基丙酯、(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸、(甲基)丙烯醯氧基丙基三甲氧基矽烷等之(甲基)丙烯酸及其衍生物,可單獨使用或可組合2種以上使用。As such organic compounds, for example, (meth)acrylic acid chloride, 2-isocyanate ethyl (meth)acrylate, glycidyl (meth)acrylate, 2,3-imine (meth)acrylate (meth)acrylic acid and its derivatives such as propyl ester, 2-hydroxyethyl (meth)acrylate, (meth)acrylic acid, (meth)acryloxypropyltrimethoxydecane, etc., may be used alone or Two or more types can be used in combination.

包含前述無機微粒子之埋入樹脂層全體積中之該無機微粒子之含量較好為20~70體積%,更好為30~65體積%,又更好為30~60體積%。無機微粒子之含量在該範圍時,例如可將埋入樹脂層之70℃下之彈性率控制在較高值。且,可提高耐熱性。作為無機微粒子較好為氧化矽微粒子。The content of the inorganic fine particles in the entire volume of the embedded resin layer containing the inorganic fine particles is preferably from 20 to 70% by volume, more preferably from 30 to 65% by volume, still more preferably from 30 to 60% by volume. When the content of the inorganic fine particles is within this range, for example, the elastic modulus at 70 ° C of the embedded resin layer can be controlled to a high value. Moreover, heat resistance can be improved. The inorganic fine particles are preferably cerium oxide fine particles.

(iii)光聚合起始劑   能量線感應型組成物中含有光聚合起始劑。   作為光聚合起始劑舉例為苯偶因、苯偶因甲醚、苯偶因乙醚、苯偶因異丙醚、苯偶因正丁醚、苯偶因異丁醚、苯乙酮、二甲胺基苯乙酮、2,2-二甲氧基-2-苯基苯乙酮、2,2-二乙氧基-2-苯基苯乙酮、2-羥基-2-甲基-1-苯基丙烷-1-酮、1-羥基環己基苯基酮、2-甲基-1-[4-(甲硫基)苯基]-2-嗎啉-丙烷-1-酮、4-(2-羥基乙氧基)苯基-2(羥基-2-丙基)酮、二苯甲酮、對-苯基二苯甲酮、4,4’-二乙胺基二苯甲酮、二氯二苯甲酮、2-甲基蒽醌、2-乙基蒽醌、2-第三丁基蒽醌、2-胺基蒽醌、2-甲基噻噸酮、2-乙基噻噸酮、2-氯噻噸酮、2,4-二甲基噻噸酮、2,4-二乙基噻噸酮、苄基二甲基縮醛、苯乙酮二甲基縮醛、對-二甲胺基苯甲酸酯等。該等光聚合起始劑可單獨使用或組合2種以上使用。可適當使用市售品的Irgacure 127、Irgacure 184、Irgacure 819、Darocure 1173等。(iii) Photopolymerization initiator The energy ray-inducing composition contains a photopolymerization initiator. Examples of the photopolymerization initiator are benzoin, benzoin methyl ether, benzoin ether, benzoin isopropyl ether, benzoin n-butyl ether, benzoin isobutyl ether, acetophenone, and dimethyl Aminoacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxy-2-phenylacetophenone, 2-hydroxy-2-methyl-1 -Phenylpropan-1-one, 1-hydroxycyclohexyl phenyl ketone, 2-methyl-1-[4-(methylthio)phenyl]-2-morpholine-propan-1-one, 4- (2-hydroxyethoxy)phenyl-2(hydroxy-2-propyl)one, benzophenone, p-phenylbenzophenone, 4,4'-diethylaminobenzophenone, Dichlorobenzophenone, 2-methyl hydrazine, 2-ethyl hydrazine, 2-tert-butyl fluorene, 2-amino hydrazine, 2-methyl thioxanthone, 2-ethyl thiophene Tons of ketone, 2-chlorothioxanthone, 2,4-dimethylthioxanthone, 2,4-diethylthioxanthone, benzyldimethylacetal, acetophenone dimethyl acetal, pair - dimethylamino benzoate or the like. These photopolymerization initiators may be used singly or in combination of two or more. Commercially available Irgacure 127, Irgacure 184, Irgacure 819, Darocure 1173, and the like can be suitably used.

作為包含上述(i)能量線硬化型化合物、(ii)氧化矽微粒子及(iii)光聚合起始劑之能量線感應型組成物之市售品舉例為例如「OPSTAR Z7530」、「OPSTAR Z7524」、「OPSTAR TU4086」(製品名,均為JSR公司製)等。Commercial products including the above-described (i) energy ray-curable compound, (ii) cerium oxide microparticles, and (iii) photopolymerization initiator are exemplified by, for example, "OPSTAR Z7530" and "OPSTAR Z7524". "OPSTAR TU4086" (product name, all manufactured by JSR).

又,上述中,使用不含(ii)氧化矽微粒子而由(i)能量線硬化型化合物及(iii)光聚合起始劑所成之能量線感應型組成物,可形成埋入樹脂層。   作為(i)能量線硬化型化合物,基於柔軟性之觀點,較好為胺基甲酸酯丙烯酸酯系化合物,舉例為例如對於1分子中具有2個以上NCO基之化合物1莫耳反應2莫耳以上之含羥基之丙烯酸系單體而得之1分子具有1個以上(甲基)丙烯酸基之化合物。此處,作為含羥基之丙烯酸系單體,舉例為(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸4-羥基丁酯、聚乙二醇單(甲基)丙烯酸酯、聚丙二醇單(甲基)丙烯酸酯、環己烷二甲醇單(甲基)丙烯酸酯等之含羥基之(甲基)丙烯酸酯。   又,作為1分子中具有2個以上NCO基之化合物,較好為使二異氰酸酯等之聚異氰酸酯化合物與二醇等之多元醇化合物反應所得之分子量為500~50000左右之寡聚物。   作為聚異氰酸酯化合物,舉例為六亞甲基二異氰酸酯、異佛爾酮二異氰酸酯等之脂肪族聚異氰酸酯、或甲苯二異氰酸酯、二甲苯二異氰酸酯、二苯基甲烷二異氰酸酯、伸苯基二異氰酸酯等之芳香族聚異氰酸酯。   作為多元醇化合物,舉例為乙二醇、丙二醇、四亞甲基二醇、六亞甲基二醇、新戊二醇、1,4-環己烷二醇等之二醇;甘油、季戊四醇等之3元以上之多元醇;聚乙二醇、聚丙二醇、聚四亞甲基二醇、聚六亞甲基二醇等之聚醚型多元醇;上述二醇與鄰苯二甲酸、間苯二甲酸、對苯二甲酸、馬來酸、富馬酸、己二酸、癸二酸等之二元酸反應所得之聚酯型之二醇等。   例如作為市售品舉例為UV硬化系胺基甲酸酯丙烯酸酯樹脂(日本合成化學公司製,UT5746,固形分80質量%,乙酸乙酯溶液)等。   作為光聚合起始劑,舉例為照射光時產生自由基之化合物。作為此等光聚合起始劑舉例為苯烷酮系光聚合起始劑、醯基氧化膦系光聚合起始劑、肟酯系公聚合起始劑等。   該等中,基於容易調整彈性率之觀點,較好為醯基氧化膦系光反應起始劑。   藉由調整光聚合起始劑等之量,亦可作成具有特定彈性率之埋入樹脂層。   作為光聚合起始劑之含量,相對於(i)能量線硬化型化合物100質量份,較好為0.2~5質量份,更好為0.5~3質量份。光聚合起始劑含量若為該範圍,則耐候性良好,且硬化性充分。Further, in the above, an energy ray-inductive composition comprising (i) an energy ray-curable compound and (iii) a photopolymerization initiator, which does not contain (ii) cerium oxide microparticles, can be used to form a buried resin layer. The (i) energy ray-curable compound is preferably a urethane acrylate-based compound from the viewpoint of flexibility, and is, for example, a molar reaction of a compound 1 having two or more NCO groups in one molecule. A compound having one or more (meth)acrylic groups in one molecule obtained from a hydroxyl group-containing acrylic monomer having an ear content or more. Here, examples of the hydroxyl group-containing acrylic monomer include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, and polyethylene. A hydroxyl group-containing (meth) acrylate such as an alcohol mono(meth)acrylate, a polypropylene glycol mono(meth)acrylate, or a cyclohexanedimethanol mono(meth)acrylate. In addition, the compound having two or more NCO groups in one molecule is preferably an oligomer having a molecular weight of about 500 to 50,000 obtained by reacting a polyisocyanate compound such as a diisocyanate with a polyol compound such as a diol. Examples of the polyisocyanate compound include aliphatic polyisocyanates such as hexamethylene diisocyanate and isophorone diisocyanate, or toluene diisocyanate, xylene diisocyanate, diphenylmethane diisocyanate, and phenyl diisocyanate. Aromatic polyisocyanate. Examples of the polyol compound include glycols such as ethylene glycol, propylene glycol, tetramethylene glycol, hexamethylene glycol, neopentyl glycol, and 1,4-cyclohexanediol; glycerin, pentaerythritol, and the like. Polyols of more than 3 yuan; polyether polyols such as polyethylene glycol, polypropylene glycol, polytetramethylene glycol, polyhexamethylene glycol, etc.; the above diols and phthalic acid, isophthalic acid A polyester type diol obtained by reacting a dibasic acid such as dicarboxylic acid, terephthalic acid, maleic acid, fumaric acid, adipic acid or sebacic acid. For example, a commercially available product is a UV-curable urethane acrylate resin (manufactured by Nippon Synthetic Chemical Co., Ltd., UT 5746, a solid content of 80% by mass, an ethyl acetate solution). As the photopolymerization initiator, a compound which generates a radical upon irradiation with light is exemplified. Examples of such a photopolymerization initiator include a phenyl ketene photopolymerization initiator, a fluorenyl phosphine oxide photopolymerization initiator, and an oxime ester copolymerization initiator. Among these, a fluorenylphosphine oxide-based photoreaction initiator is preferred because it is easy to adjust the modulus of elasticity. The embedded resin layer having a specific modulus of elasticity can also be formed by adjusting the amount of the photopolymerization initiator or the like. The content of the photopolymerization initiator is preferably 0.2 to 5 parts by mass, more preferably 0.5 to 3 parts by mass, per 100 parts by mass of the (i) energy ray-curable compound. When the content of the photopolymerization initiator is within this range, the weather resistance is good and the curability is sufficient.

能量線感應型組成物亦可根據需要含有紫外線吸收劑。   作為紫外線吸收劑舉例為苯并三唑系紫外線吸收劑、受阻胺系紫外線吸收劑、二苯甲酮系紫外線吸收劑、三嗪系紫外線吸收劑等。該等紫外線吸收劑可單獨使用或組合2種以上使用。該等中,較好為分子內具有自由基聚合性之雙鍵的自由基聚合性紫外線吸收劑。   作為含有紫外線吸收劑時之含量,相對於(i)能量線硬化型化合物、(ii)氧化矽微粒子及(iii)光聚合起始劑之合計100質量份,較好為0.2~10質量%,更好為0.5~7質量份。The energy ray-sensitive composition may also contain an ultraviolet absorber as needed. Examples of the ultraviolet absorber include a benzotriazole-based ultraviolet absorber, a hindered amine-based ultraviolet absorber, a benzophenone-based ultraviolet absorber, and a triazine-based ultraviolet absorber. These ultraviolet absorbers can be used alone or in combination of two or more. Among these, a radically polymerizable ultraviolet absorber having a radical polymerizable double bond in the molecule is preferred. The content of the ultraviolet ray absorbing agent is preferably 0.2 to 10% by mass based on 100 parts by mass of the total of (i) the energy ray-curable compound, (ii) cerium oxide fine particles, and (iii) photopolymerization initiator. More preferably 0.5 to 7 parts by mass.

能量線感應型組成物亦可根據需要含有光安定劑。   作為光安定劑,舉例為受阻胺系光安定劑、二苯甲酮系光安定劑、苯并三唑光安定劑等。該等光安定劑可單獨使用或可阻合2種以上使用。   作為含有光安定劑時之含量,相對於(i)能量線硬化型化合物、(ii)氧化矽微粒子及(iii)光聚合起始劑之合計100質量份,較好為0.2~10質量%,更好為0.5~7質量份。   且,根據需要,除上述各成分以外,可添加聚合抑制劑、黏度調整劑、界面活性劑、消泡劑、有機金屬偶合劑、矽烷偶合劑等。The energy ray-sensitive composition may also contain a light stabilizer as needed. Examples of the photostabilizer include a hindered amine light stabilizer, a benzophenone light stabilizer, a benzotriazole light stabilizer, and the like. These light stabilizers may be used singly or in combination of two or more kinds. The content of the light stabilizer is preferably 0.2 to 10% by mass based on 100 parts by mass of the total of (i) the energy ray-curable compound, (ii) cerium oxide fine particles, and (iii) photopolymerization initiator. More preferably 0.5 to 7 parts by mass. Further, a polymerization inhibitor, a viscosity modifier, a surfactant, an antifoaming agent, an organic metal coupling agent, a decane coupling agent, or the like may be added in addition to the above components as needed.

(透明導電層)   本發明所用之透明導電層係由金屬氧化物所成。作為金屬氧化物舉例為銦-錫氧化物(ITO)、銦-鋅氧化物(IZO)、鋁-鋅氧化物(AZO)、鎵-鋅氧化物(GZO)、銦-鎵-鋅氧化物(IGZO)、氧化鈮、氧化鈦、氧化錫等,該等可單獨用或可使用複數種。該等中,基於透過率、薄片電阻值、安定性之觀點,特佳為ITO及IZO。   透明導電層之膜厚較好為5~200nm,更好為10~100 nm,又更好為20~50nm。若為該範圍,則可獲得同時具有高透過率、低表面電阻率及面內電阻之均一性的薄膜,故而較佳。   又,透明導電層之全光線透過率,較好為依據JIS K7361-1測定之全光線透過率為70%以上者,更好為80%以上者,又更好為90%以上者。   透明導電層之濁度較好為10%以下,更好為5%以下。   透明導電層之薄片電阻值較好為1000Ω/□以下,更好為500Ω/□以下,又更好為100Ω/□以下。(Transparent Conductive Layer) The transparent conductive layer used in the present invention is made of a metal oxide. Examples of the metal oxides include indium-tin oxide (ITO), indium-zinc oxide (IZO), aluminum-zinc oxide (AZO), gallium-zinc oxide (GZO), and indium-gallium-zinc oxide ( IGZO), cerium oxide, titanium oxide, tin oxide, etc., may be used singly or in plural. Among these, ITO and IZO are particularly preferable from the viewpoints of transmittance, sheet resistance, and stability. The film thickness of the transparent conductive layer is preferably from 5 to 200 nm, more preferably from 10 to 100 nm, even more preferably from 20 to 50 nm. If it is in this range, a film having high transmittance, low surface resistivity, and uniformity of in-plane resistance can be obtained, which is preferable. Further, the total light transmittance of the transparent conductive layer is preferably 70% or more, more preferably 80% or more, and more preferably 90% or more, measured according to JIS K7361-1. The turbidity of the transparent conductive layer is preferably 10% or less, more preferably 5% or less. The sheet resistance of the transparent conductive layer is preferably 1000 Ω/□ or less, more preferably 500 Ω/□ or less, and still more preferably 100 Ω/□ or less.

作為上述透明導電層之形成方法,基於獲得高透過率及低薄片電阻值之觀點,較好為乾式成膜法。例如為電阻加熱蒸鍍法、電子束蒸鍍法、分子束磊晶法、離子束法、離子鍍覆法、濺鍍法等之物理氣相成長法(以下亦稱為「PVD」),或熱CVD法、電漿CVD法、光CVD法、磊晶CVD法、原子層CVD法等之化學氣相成長法(以下亦稱為「CVD」)等之乾式成膜法。   基於容易獲得低薄片電阻值、高精度之膜厚控制、特定組成比,且品質安定性亦高,較好為濺鍍法。藉由上述方法成膜後,根據需要,藉由於對其他積層體不造成影響之範圍內施以加熱處理,可獲得更優異之薄片電阻值。   此處所說之乾式成膜法亦存在有使用氣相或熔解狀態處理材料表面,一般稱為乾製程法。As a method of forming the transparent conductive layer, a dry film formation method is preferred from the viewpoint of obtaining high transmittance and low sheet resistance. For example, a physical vapor phase growth method (hereinafter also referred to as "PVD") such as a resistance heating vapor deposition method, an electron beam evaporation method, a molecular beam epitaxy method, an ion beam method, an ion plating method, or a sputtering method, or A dry film formation method such as a chemical vapor deposition method (hereinafter also referred to as "CVD") such as a thermal CVD method, a plasma CVD method, a photo CVD method, an epitaxial CVD method, or an atomic layer CVD method. It is preferable to use a sputtering method because it is easy to obtain a low sheet resistance value, a film thickness control with high precision, a specific composition ratio, and high quality stability. After the film formation by the above method, if necessary, heat treatment is applied in a range which does not affect other laminates, whereby a more excellent sheet resistance value can be obtained. The dry film forming method referred to herein also has a surface treated with a gas phase or a molten state, and is generally referred to as a dry process.

(黏著層)   本發明之透明導電性積層體中,較好進而於埋入樹脂層之與透明導電層相反側之面上包含黏著層,更好於前述埋入樹脂層與後述透明氣體障蔽層之間包含前述黏著層。   黏著層係用以提高埋入樹脂層與如前述之例如透明氣體障蔽層之黏著性且提高透明導電性積層體之彎曲性等而使用。(Adhesive layer) The transparent conductive laminated body of the present invention preferably further comprises an adhesive layer on a surface of the resin layer opposite to the transparent conductive layer, and is more preferably embedded in the resin layer and a transparent gas barrier layer to be described later. The aforementioned adhesive layer is included between them. The adhesive layer is used to increase the adhesion of the embedded resin layer to, for example, the above-described transparent gas barrier layer, and to improve the flexibility of the transparent conductive laminate.

黏著層之25℃下之彈性率較好為100~3000 MPa,更好為200~2400 MPa,又更好為400~2200MPa。25℃下之黏著層的彈性率若為上述範圍,則藉由直接介隔於透明氣體障蔽層等與埋入樹脂層之間,而提高黏著性,且更提高彎曲性。The elastic modulus at 25 ° C of the adhesive layer is preferably from 100 to 3,000 MPa, more preferably from 200 to 2,400 MPa, and even more preferably from 400 to 2,200 MPa. When the elastic modulus of the adhesive layer at 25 ° C is in the above range, the adhesive property is improved and the flexibility is further improved by directly interposing between the transparent gas barrier layer and the like and the embedded resin layer.

前述黏著層之玻璃轉移溫度較好為40℃以上,更好為50℃以上,又更好為60℃以上。黏著層之玻璃轉移溫度若低於所組合之埋入樹脂層之玻璃轉移溫度而在該範圍內,則黏著性及彎曲性提高。   前述黏著層之膜厚較好為1~120μm,更好為3~100 μm,又更好為4~80μm。埋入樹脂之膜厚於前述範圍內,且黏著層膜厚於上述範圍內時,透明導電性積層體之彎曲性提高。The glass transition temperature of the adhesive layer is preferably 40 ° C or higher, more preferably 50 ° C or higher, and still more preferably 60 ° C or higher. When the glass transition temperature of the adhesive layer is lower than the glass transition temperature of the embedded resin layer to be combined, the adhesion and the bendability are improved. The film thickness of the adhesive layer is preferably from 1 to 120 μm, more preferably from 3 to 100 μm, still more preferably from 4 to 80 μm. When the film thickness of the embedded resin is within the above range, and the thickness of the adhesive layer film is within the above range, the flexibility of the transparent conductive laminated body is improved.

本發明所用之黏著層若前述彈性率為本發明之範圍內,則未特別限制,與埋入樹脂層同樣,較好由透明樹脂組成物而成。舉例為例如能量線硬化型化合物、熱塑性樹脂等。The adhesive layer used in the present invention is not particularly limited as long as the elastic modulus is within the range of the present invention, and is preferably a transparent resin composition as in the case of the embedded resin layer. For example, an energy ray hardening type compound, a thermoplastic resin, etc. are mentioned.

作為能量線硬化型化合物舉例為與前述埋入樹脂層所用者相同者。The energy ray-curable compound is exemplified by the same as those used for embedding the resin layer.

作為熱塑性樹脂舉例為例如聚乙烯、聚丙烯、聚丁烯等之聚烯烴系樹脂、(甲基)丙烯酸系樹脂、聚氯乙烯系樹脂、聚苯乙烯系樹脂、聚偏氯乙烯系樹脂、乙烯-乙酸乙烯酯共聚物皂化物、聚乙烯醇、聚碳酸酯系樹脂、氟系樹脂、聚乙酸乙烯酯系樹脂、縮醛系樹脂、聚對苯二甲酸乙二酯(PET)、聚萘二甲酸乙二酯(PEN)、聚萘二甲酸丁二酯(PBN)等之聚酯系樹脂,尼龍6、尼龍66等之聚醯胺系樹脂等。又,上述樹脂可單獨使用1種,亦可組合2種以上使用。該等中,較好為聚乙烯、聚丙烯、聚苯乙烯、聚氯乙烯、聚偏氯乙烯。Examples of the thermoplastic resin include polyolefin resins such as polyethylene, polypropylene, and polybutene, (meth)acrylic resins, polyvinyl chloride resins, polystyrene resins, polyvinylidene chloride resins, and ethylene. - vinyl acetate copolymer saponified product, polyvinyl alcohol, polycarbonate resin, fluorine resin, polyvinyl acetate resin, acetal resin, polyethylene terephthalate (PET), polynaphthalene A polyester resin such as ethylene formate (PEN) or polybutylene naphthalate (PBN), a polyamide resin such as nylon 6, or nylon 66. Further, the above resins may be used alone or in combination of two or more. Among these, polyethylene, polypropylene, polystyrene, polyvinyl chloride, and polyvinylidene chloride are preferable.

作為能量線硬化型化合物之市售品舉例為例如UV硬化系丙烯酸樹脂(東洋油墨公司製,UA-A1,固形分100質量%)、UV硬化系丙烯酸樹脂(東亞合成公司製,UVX6125,固形分100重量%)等,作為光聚合起始劑舉例為Irgacure 819(BASF公司製)等。與前述之埋入樹脂層同樣,藉由調整光聚合起始劑等之量,亦可成為具有特定彈性率之黏著層。   作為光聚合起始劑之含量,相對於能量線硬化型化合物100質量份,較好為0.1~10質量份,更好為0.3~5質量份。光聚合起始劑之含量若為該範圍內,則硬化性充分。   又,根據需要,除了上述各成分以外,亦可添加聚合抑制劑、黏度調整劑、界面活性劑、消泡劑、有機金屬偶合劑等。Commercially available products of the energy ray-curable compound are, for example, UV-curable acrylic resin (manufactured by Toyo Ink Co., Ltd., UA-A1, solid content: 100% by mass), and UV-curable acrylic resin (manufactured by Toagosei Co., Ltd., UVX6125, solid content) 100% by weight or the like, as a photopolymerization initiator, Irgacure 819 (manufactured by BASF Corporation) or the like is exemplified. Similarly to the above-described buried resin layer, an adhesive layer having a specific modulus of elasticity can be obtained by adjusting the amount of the photopolymerization initiator or the like. The content of the photopolymerization initiator is preferably 0.1 to 10 parts by mass, more preferably 0.3 to 5 parts by mass, per 100 parts by mass of the energy ray-curable compound. When the content of the photopolymerization initiator is within this range, the hardenability is sufficient. Further, a polymerization inhibitor, a viscosity modifier, a surfactant, an antifoaming agent, an organic metal coupling agent or the like may be added in addition to the above components as needed.

(透明氣體障蔽層)   本發明之透明導電性積層體中,較好進而於透明基材上包含透明氣體障蔽層。本發明所用之透明氣體障蔽層具有抑制例如圖2中之透過透明基材2之大氣中的水蒸氣透過,結果防止水蒸氣朝埋入樹脂層3、補助電極層4等透過之功能。本發明中,於前述透明基材上積層透明氣體障蔽層時,自不具有該透明氣體障蔽層之該透明基材面側之40℃、90%RH之高濕條件下之水蒸氣透過率較好為1.0 (g・m-2 ・day-1 )以下,更好為1.0×10-2 (g・m-2 ・day-1 )以下,又更好為5.0×10-4 (g・m-2 ・day-1 )以下,特佳為1.0×10-4 (g・m-2 ・day-1 )以下。藉由使水蒸氣透過率於此等範圍內,且補助電極層、埋入樹脂層等之其他層之水蒸氣透過率維持於特定值,可使例如本發明之透明導電性積層體之透明導電層不會因水分而劣化,可抑制薄片電阻值之增加。又,作為電子裝置之透光性電極使用時,可抑制該等裝置內部之活性層等之經時劣化,與裝置之長壽命化有關。(Transparent Gas Barrier Layer) In the transparent conductive laminate of the present invention, it is preferred to further include a transparent gas barrier layer on the transparent substrate. The transparent gas barrier layer used in the present invention has a function of suppressing the permeation of water vapor in the atmosphere passing through the transparent substrate 2 in FIG. 2, and as a result, preventing the water vapor from penetrating into the resin layer 3, the auxiliary electrode layer 4, and the like. In the present invention, when the transparent gas barrier layer is laminated on the transparent substrate, the water vapor transmission rate under high humidity conditions of 40 ° C and 90% RH on the surface side of the transparent substrate without the transparent gas barrier layer is higher. It is preferably 1.0 (g·m -2 ·day -1 ) or less, more preferably 1.0 × 10 -2 (g·m -2 ·day -1 ) or less, and even more preferably 5.0 × 10 -4 (g·m -2・day -1 ) or less, especially preferably 1.0 × 10 -4 (g・m -2・day -1 ) or less. The transparent conductive laminated body of the present invention can be transparently conductive, for example, by maintaining the water vapor transmission rate in the range of the water vapor transmission rate of the auxiliary electrode layer or the other layer embedded in the resin layer. The layer is not deteriorated by moisture, and the increase in sheet resistance can be suppressed. Further, when used as a translucent electrode of an electronic device, it is possible to suppress deterioration of the active layer or the like inside the devices over time, which is related to the long life of the device.

作為透明氣體障蔽層舉例為包含金屬氧化物之層;對包含高分子化合物之層(以下有時稱為「高分子層」)實施離子注入等之改質處理所得之層;等。   作為上述包含金屬氧化物之層之形成方法可使用前述之透明導電層之形成方法。再者,成膜後,根據需要,藉由在不對其他積層體造成影響之範圍實施加熱處理,獲得更低之薄片電阻值。   作為金屬氧化物之原料,舉例為矽、鋁、鎂、鋅及錫等之金屬;氧化矽、一氧化矽、氧化鋁、氧化鎂、氧化鋅、氧化銦、氧化錫、氧化鋅錫等之無機氧化物;氮化矽、氮化鋁、氮化鈦等之無機氮化物;無機碳化物;無機硫化物;氧化氮化矽等之無機氧化氮化物;無機氧化碳化物;無機氮化碳化物;無機氧化氮化碳化物等。該等可單獨使用1種,或可組合2種以上使用。   該等中,基於氣體障蔽性之觀點,較好為將無機氧化物、無機氮化物或金屬作為原料之無機蒸鍍膜。又,基於具有層間黏著性、氣體障蔽性及耐折彎曲性之觀點,較好使用對包含金屬氧化物之層,或包含聚矽氮烷系化合物之層實施改質處理所形成之以氧、氮、矽為主構成原子之層所成之氧氮化矽層。   作為高分子層所用之高分子化合物舉例為聚有機矽氧烷、聚矽氮烷系化合物等之含矽高分子化合物,聚醯亞胺、聚醯胺、聚醯胺醯亞胺、聚苯醚、聚醚酮、聚醚醚酮、聚烯烴、聚酯等。該等高分子化合物可單獨使用1種,或可組合2種以上使用。   該等中,基於更優異之氣體障蔽性,作為高分子化合物較好為含矽高分子化合物。作為含矽高分子化合物舉例為聚矽氮烷系化合物、聚碳矽烷系化合物、聚矽烷系化合物及聚有機矽氧烷系化合物等。該等中,基於可形成具有優異氣體障蔽性之透明氣體障蔽層之觀點,較好為聚矽氮烷系化合物。The transparent gas barrier layer is exemplified by a layer containing a metal oxide, a layer obtained by modifying a layer containing a polymer compound (hereinafter sometimes referred to as a "polymer layer"), and the like, and the like. As a method of forming the above-described layer containing a metal oxide, a method of forming the above-described transparent conductive layer can be used. Further, after the film formation, a lower sheet resistance value is obtained by performing heat treatment in a range not affecting other laminates as needed. As a raw material of the metal oxide, for example, a metal such as lanthanum, aluminum, magnesium, zinc, or tin; inorganic cerium oxide, cerium oxide, aluminum oxide, magnesium oxide, zinc oxide, indium oxide, tin oxide, zinc tin oxide, or the like An oxide; an inorganic nitride such as tantalum nitride, aluminum nitride or titanium nitride; an inorganic carbide; an inorganic sulfide; an inorganic oxynitride such as lanthanum oxynitride; an inorganic oxidized carbide; an inorganic carbide; Inorganic oxynitride carbides, etc. These may be used alone or in combination of two or more. Among these, from the viewpoint of gas barrier properties, an inorganic deposited film containing an inorganic oxide, an inorganic nitride or a metal as a raw material is preferred. Further, from the viewpoint of having interlayer adhesion, gas barrier properties, and folding resistance, it is preferred to use oxygen which is formed by reforming a layer containing a metal oxide or a layer containing a polyazane-based compound. Nitrogen and bismuth are the yttria layers formed by the layers of atoms. The polymer compound used for the polymer layer is exemplified by a fluorene-containing polymer compound such as a polyorganosiloxane or a polyazane compound, a polyimine, a polyamine, a polyamidimide, or a polyphenylene ether. , polyether ketone, polyether ether ketone, polyolefin, polyester, and the like. These polymer compounds may be used alone or in combination of two or more. Among these, a polymer compound is preferably a ruthenium-containing polymer compound based on more excellent gas barrier properties. Examples of the ruthenium containing polymer compound include a polyazane-based compound, a polycarbodecane-based compound, a polydecane-based compound, and a polyorganosiloxane compound. Among these, a polyazane-based compound is preferred from the viewpoint of forming a transparent gas barrier layer having excellent gas barrier properties.

透明氣體障蔽層可藉由例如對含聚矽氮烷化合物之層實施電漿離子注入處理、電漿處理、紫外線照射處理、熱處理等而形成。作為藉由電漿離子注入處理而注入之離子,舉例為氫、氮、氧、氬、氦、氖、氙及氡等。   作為電漿離子注入處理之具體處理方法舉例為使用外部電場將存在於所發生之電漿中之離子注入於含聚矽氮烷化合物之層之方法,或不使用外部電場,將僅藉由對由氣體障蔽層形成用材料所成之層施加負的高壓脈衝之電場而發生之電漿中存在之離子注入於含聚矽氮烷化合物之層之方法。   電漿處理係將含聚矽氮烷化合物之層暴露於電漿中,使含有含矽聚合物之層改質之方法。例如可依據日本特開2012-106421號公報所記載之方法,進行電漿處理。紫外線照射處理係對含聚矽氮烷化合物之層照射紫外線而使含有含矽聚合物之層改質之方法。例如,可依據日本特開2013-226757號公報中記載之方法進行紫外線改質處理。   該等中,離子注入處理由於不使含聚矽氮烷化合物之層表面粗糙,而效率良好地改質至其內部,可形成氣體障蔽性更優異之氣體障蔽層故而較好。The transparent gas barrier layer can be formed, for example, by subjecting a layer containing a polyazide compound to plasma ion implantation treatment, plasma treatment, ultraviolet irradiation treatment, heat treatment, or the like. Examples of the ions to be implanted by the plasma ion implantation treatment include hydrogen, nitrogen, oxygen, argon, helium, neon, krypton, and xenon. The specific treatment method for the plasma ion implantation treatment is exemplified by a method of injecting ions existing in the generated plasma into the layer containing the polyazide compound using an external electric field, or without using an external electric field, only by A method in which ions existing in a plasma generated by applying a negative high-voltage pulse to a layer formed of a material for forming a gas barrier layer is injected into a layer containing a polyazide compound. The plasma treatment is a method in which a layer containing a polyazide compound is exposed to a plasma to modify a layer containing a ruthenium-containing polymer. For example, the plasma treatment can be carried out in accordance with the method described in JP-A-2012-106421. The ultraviolet irradiation treatment is a method in which a layer containing a polyazide compound is irradiated with ultraviolet rays to modify a layer containing a ruthenium-containing polymer. For example, the ultraviolet modification treatment can be carried out in accordance with the method described in JP-A-2013-226757. In these cases, the ion implantation treatment is preferably carried out by roughening the surface of the layer containing the polyazide-containing compound, and it is possible to form a gas barrier layer which is more excellent in gas barrier properties.

作為透明氣體障蔽層之積層方法並未特別限制,但基於製造簡便,較好為層合法。The method of laminating the transparent gas barrier layer is not particularly limited, but is preferably a layering method based on ease of manufacture.

透明氣體障蔽層可為1層亦可積層2層以上。且積層2層以上時,該等可相同亦可不同。   透明氣體障蔽層的厚度較好為20nm~50μm,更好為30nm~1μm,又更好為40~ 500nm。透明氣體障蔽層之膜厚若在該範圍內,則獲得優異氣體障蔽性或黏著性,並且可兼具柔軟性與被膜強度。The transparent gas barrier layer may be one layer or two or more layers. When two or more layers are laminated, the same may be the same or different. The thickness of the transparent gas barrier layer is preferably from 20 nm to 50 μm, more preferably from 30 nm to 1 μm, even more preferably from 40 to 500 nm. When the film thickness of the transparent gas barrier layer is within this range, excellent gas barrier properties or adhesive properties are obtained, and both flexibility and film strength can be obtained.

(底塗層)   於透明基材上形成透明氣體障蔽層時,為了提高透明基材與透明氣體障蔽層之黏著性,亦可使用底塗層。作為底塗層,可適當使用例如丙烯酸系、聚酯系、聚胺基甲酸酯系、橡膠系等之底塗層。底塗層厚度通常為0.1~10μm,較好為0.5~5μm。底塗層厚度若為上述範圍內,則能覆蓋透明基材之凹凸,並使來自透明基材之缺陷減少,同時提升透明氣體障蔽層之氣體障蔽性能,且提高透明基材與透明氣體障蔽層間之黏著力,於後述之轉印基材面之表面平滑性轉印步驟中,可順利地自轉印基材側剝離。(Undercoat layer) When a transparent gas barrier layer is formed on a transparent substrate, an undercoat layer may be used in order to improve the adhesion between the transparent substrate and the transparent gas barrier layer. As the undercoat layer, for example, an undercoat layer of an acrylic type, a polyester type, a polyurethane type, or a rubber type can be suitably used. The thickness of the undercoat layer is usually from 0.1 to 10 μm, preferably from 0.5 to 5 μm. When the thickness of the undercoat layer is within the above range, the unevenness of the transparent substrate can be covered, and the defects from the transparent substrate can be reduced, and the gas barrier property of the transparent gas barrier layer can be improved, and the transparent substrate and the transparent gas barrier layer can be improved. The adhesive force can be smoothly peeled off from the transfer substrate side in the surface smoothness transfer step of the transfer substrate surface to be described later.

本發明之透明導電性積層體之濁度較好為2.5%以下,更好為2.0%以下。且,於乾式成膜前後之濁度增加率(乾式成膜後之濁度值相對於乾式成膜前之濁度值之比)較好為1.40以下,更好為1.25以下,又更好為1.10以下。濁度值及乾式成膜前後之濁度增加率若為該範圍,則獲得光學特性優異之透明導電性積層體。The haze of the transparent electroconductive laminate of the present invention is preferably 2.5% or less, more preferably 2.0% or less. Further, the turbidity increase rate before and after the dry film formation (the ratio of the haze value after the dry film formation to the haze value before the dry film formation) is preferably 1.40 or less, more preferably 1.25 or less, and more preferably 1.10 or less. When the turbidity value and the turbidity increase rate before and after the dry film formation are within this range, a transparent conductive layered body excellent in optical characteristics is obtained.

本發明之透明導電性積層體之透明導電層側之薄片電阻值較好為10Ω/□以下,更好為5Ω/□以下,又更好為1Ω/□以下。薄片電阻值若為該範圍,則獲得電特性優異之透明導電性積層體。The sheet resistance value on the side of the transparent conductive layer of the transparent conductive laminated body of the present invention is preferably 10 Ω/□ or less, more preferably 5 Ω/□ or less, and still more preferably 1 Ω/□ or less. When the sheet resistance value is in this range, a transparent conductive laminate having excellent electrical properties is obtained.

透明導電性積層體厚度較好為10~300μm,更好為10~200μm,又更好為20~150μm。若為該範圍,則於透明導電積層體上積層透明導電層,作成透明導電性積層體時,具有可撓性並且可賦予高的透過率、低薄片電阻值。   透明導電積層體之開口部的全光線透過率(T0 )較好為80%~96%,更好為90%~96%,又更好為92%~96%。   包含補助電極層之透明導電積層體的全光線透過率(T)較好為80%~95%,更好為83%~95%,又更好為85%~ 95%。   包含補助電極層之透明導電積層體的全光線透過率(T)相對於透明導電積層體之開口部的全光線透過率(T0 )之比T/T0 ,若不因表面電阻率之增加等而損及電特性,則越接近1越好,較好為0.93~0.99,更好為0.96~0.99,又更好為0.97~0.99。   又,補助電極層以相同圖型印刷時,補助電極層之線寬越細意指越接近1。The thickness of the transparent conductive laminate is preferably from 10 to 300 μm, more preferably from 10 to 200 μm, still more preferably from 20 to 150 μm. When it is this range, a transparent conductive layer is laminated on the transparent conductive laminated body, and when it is made into a transparent conductive laminated body, it is flexible, and can provide high transmittance and low sheet resistance value. The total light transmittance (T 0 ) of the opening of the transparent conductive laminated body is preferably from 80% to 96%, more preferably from 90% to 96%, still more preferably from 92% to 96%. The total light transmittance (T) of the transparent conductive laminate including the auxiliary electrode layer is preferably from 80% to 95%, more preferably from 83% to 95%, still more preferably from 85% to 95%. The ratio T/T 0 of the total light transmittance (T) of the transparent conductive laminate including the auxiliary electrode layer to the total light transmittance (T 0 ) of the opening of the transparent conductive laminate, if not due to the increase in surface resistivity If the electrical property is damaged, the closer to 1, the better, preferably 0.93 to 0.99, more preferably 0.96 to 0.99, and even more preferably 0.97 to 0.99. Further, when the auxiliary electrode layer is printed in the same pattern, the thinner the line width of the auxiliary electrode layer means that it is closer to 1.

本發明之透明導電性積層體具有優異光學特性及彎曲性。又,薄片電阻值小,補助電極層之轉印性優異。因此,可較好地適用於必須大面積化之太陽電池元件或有機電致元件等。The transparent conductive laminate of the present invention has excellent optical properties and flexibility. Further, the sheet resistance value is small, and the transfer property of the auxiliary electrode layer is excellent. Therefore, it can be suitably applied to a solar cell element or an organic electro-sensor element which must be large in area.

[透明導電性積層體之製造方法]   本發明之透明導電性積層體之製造方法係製造如下之透明導電性積層體之方法,該透明導電性積層體於透明基材上至少包含埋入樹脂層、補助電極層及透明導電層,該透明導電層係由金屬氧化物而成,前述埋入樹脂層在25℃下之彈性率為3000~8000MPa,且在70℃下之彈性率為1000~7000MPa,該方法包含形成前述補助電極層之步驟,於該補助電極層之開口部或於補助電極層上及開口部中形成前述埋入樹脂層之步驟,及形成前述透明導電層之步驟。[Manufacturing Method of Transparent Conductive Laminate] The method for producing a transparent conductive laminate according to the present invention is a method of producing a transparent conductive laminated body comprising at least a buried resin layer on a transparent substrate The auxiliary electrode layer and the transparent conductive layer are made of a metal oxide. The embedded resin layer has an elastic modulus at 25 ° C of 3000 to 8000 MPa, and the elastic modulus at 70 ° C is 1000 to 7000 MPa. The method includes the steps of forming the auxiliary electrode layer, forming the step of embedding the resin layer on the opening of the auxiliary electrode layer, forming the buried resin layer on the auxiliary electrode layer and the opening, and forming the transparent conductive layer.

(補助電極層形成步驟)   補助電極層形成步驟係於後述之轉印基材上,形成由前述補助電極層的材料所成之圖型的步驟。   作為補助電極層之形成方法,舉例有於轉印基材上設置未形成圖型之補助電極層後,藉由以光微影法為主體之習知物理處理或化學處理、或併用該等等,加工為特定圖型形狀之方法,或藉由網版印刷法、旋轉網版印刷法、網版軟版印刷法、噴墨法、軟版印刷法、凹版軟版印刷法等直接形成補助電極層之圖型的方法等。   作為未形成圖型之補助電極層之形成方法,可舉例真空蒸鍍法、濺鍍法、離子鍍覆法等之PVD法(物理氣相成長法),或熱CVD法、ALD法(原子層蒸鍍法)等之CVD法(化學氣相成長法)等之乾製程,或浸漬塗佈法、旋轉塗佈法、噴霧塗佈法、凹版塗佈法、模嘴塗佈法、刮刀塗佈法等之各種塗佈或電鍍等之濕製程、銀鹽法等,係根據補助電極層之材料適當選擇。(Assisted electrode layer forming step) The step of forming the auxiliary electrode layer forming step on a transfer substrate to be described later to form a pattern formed by the material of the auxiliary electrode layer. The method of forming the auxiliary electrode layer is exemplified by a conventional physical treatment or chemical treatment mainly by photolithography, or a combination of the auxiliary electrode layer having no pattern formed on the transfer substrate. a method of processing into a specific pattern shape, or directly forming a supplementary electrode by a screen printing method, a rotary screen printing method, a screen printing method, an inkjet method, a soft printing method, a gravure printing method, or the like The method of layer pattern, etc. As a method of forming the auxiliary electrode layer which is not formed, a PVD method (physical vapor phase growth method) such as a vacuum deposition method, a sputtering method, or an ion plating method, or a thermal CVD method or an ALD method (atomic layer) can be exemplified. Dry process such as CVD method (chemical vapor phase growth method) such as vapor deposition method, or dip coating method, spin coating method, spray coating method, gravure coating method, die coating method, blade coating Various wet coating processes such as coating or plating, silver salt method, and the like are appropriately selected depending on the material of the auxiliary electrode layer.

(埋入樹脂層形成步驟)   埋入樹脂層形成步驟作為一態樣,係於補助電極層之開口部或於開口部及補助電極層上積層埋入樹脂層之步驟。作為其他態樣,係於黏著層或透明氣體障蔽層上積層埋入樹脂層之步驟。(Embedded Resin Layer Forming Step) The embedded resin layer forming step is a step of embedding a resin layer on the opening of the auxiliary electrode layer or on the opening and the auxiliary electrode layer. As another aspect, the step of embedding the resin layer on the adhesive layer or the transparent gas barrier layer is carried out.

作為埋入樹脂層之形成方法,舉例為浸漬塗佈法、旋轉塗佈法、噴霧塗佈法、凹版塗佈法、模嘴塗佈法、刮刀塗佈法、馬亞塗佈法等。   作為照射能量放射線之方法,舉例為例如紫外線或電子束等。上述紫外線可藉高壓水銀燈、閃光H燈、氙氣燈等獲得,光量通常為100~500mJ/cm2 ,另一方面電子束係藉由電子束加速器等獲得,照射量通常為150~350kV。該能量線中,尤佳為紫外線。又,使用電子束時,不添加光聚合起始劑,即可獲得硬化膜。Examples of the method for forming the embedded resin layer include a dip coating method, a spin coating method, a spray coating method, a gravure coating method, a die coating method, a knife coating method, and a Maya coating method. As a method of irradiating energy radiation, for example, an ultraviolet ray or an electron beam or the like is exemplified. The above ultraviolet rays can be obtained by a high pressure mercury lamp, a flash H lamp, a xenon lamp, etc., and the amount of light is usually 100 to 500 mJ/cm 2 , and on the other hand, the electron beam is obtained by an electron beam accelerator or the like, and the irradiation amount is usually 150 to 350 kV. Among the energy rays, ultraviolet rays are particularly preferred. Further, when an electron beam is used, a cured film can be obtained without adding a photopolymerization initiator.

(透明導電層形成步驟)   透明導電層形成步驟係於由補助電極層與埋入樹脂層所成之面側形成透明導電層之步驟。透明導電層之形成方法如前述。(Transparent Conductive Layer Forming Step) The transparent conductive layer forming step is a step of forming a transparent conductive layer on the side of the surface formed by the auxiliary electrode layer and the buried resin layer. The method of forming the transparent conductive layer is as described above.

(黏著層形成步驟)   本發明之透明導電性積層體之製造中,較好進而包含黏著層形成步驟。黏著層形成步驟作為一態樣,係於埋入樹脂層上形成黏著層之步驟。作為其他態樣,係於透明氣體障蔽層上形成黏著層之步驟。   作為黏著層之形成方法,與前述埋入樹脂層之形成方法相同。(Adhesive layer forming step) In the production of the transparent conductive laminated body of the present invention, it is preferred to further include an adhesive layer forming step. The adhesive layer forming step is a step of forming an adhesive layer on the buried resin layer. As another aspect, the step of forming an adhesive layer on the transparent gas barrier layer. The method of forming the adhesive layer is the same as the method of forming the buried resin layer.

(透明氣體障蔽層形成步驟)   本發明之透明導電性積層體之製造中,較好進而包含透明氣體障蔽層形成步驟。透明氣體障蔽層形成步驟係於透明基材上介隔前述底塗層形成透明氣體障蔽層之步驟。透明氣體障蔽層之形成方法及積層方法如前述。(Transparent gas barrier layer forming step) In the production of the transparent conductive laminated body of the present invention, it is preferred to further include a transparent gas barrier layer forming step. The transparent gas barrier layer forming step is a step of forming a transparent gas barrier layer on the transparent substrate via the undercoat layer. The method of forming the transparent gas barrier layer and the lamination method are as described above.

(轉印基材形成步驟)   本發明之透明導電性積層體之製造中,較好進而包含轉印基材形成步驟。轉印基材形成步驟係於轉印基材之支撐體上形成剝離層之步驟。(Transfer Substrate Forming Step) In the production of the transparent electroconductive laminate of the present invention, it is preferred to further include a transfer substrate forming step. The transfer substrate forming step is a step of forming a release layer on the support of the transfer substrate.

(支撐體)   作為支撐體並未特別限制,可舉例為例如聚對苯二甲酸乙二酯或聚萘二甲酸乙二酯等之聚酯膜,聚丙烯或聚甲基戊烯等之聚烯烴膜,聚碳酸酯膜,聚乙酸乙烯酯膜等,其中較好為聚酯膜,尤其較好為雙軸延伸聚對苯二甲酸乙二酯膜。支撐體厚度較好為10~500μm,更好為20~300 μm,又更好為30~100μm。若為該範圍,則可確保機械強度故而較佳。(Support) The support is not particularly limited, and examples thereof include a polyester film such as polyethylene terephthalate or polyethylene naphthalate, and a polyolefin such as polypropylene or polymethylpentene. A film, a polycarbonate film, a polyvinyl acetate film or the like, among which a polyester film is preferred, and a biaxially oriented polyethylene terephthalate film is particularly preferred. The thickness of the support is preferably from 10 to 500 μm, more preferably from 20 to 300 μm, even more preferably from 30 to 100 μm. If it is this range, mechanical strength can be ensured, and it is preferable.

(剝離層)   本發明所用之剝離層可藉由所用支撐體適當設置,亦可不設置,但設置時,較好為使聚矽氧樹脂組成物或紫外線硬化型剝離組成物硬化之層(以下有時稱為「硬化層」)。(Release layer) The release layer used in the present invention may or may not be provided by the support used, but it is preferably a layer which hardens the polyoxymethylene resin composition or the ultraviolet-curable release composition (hereinafter, It is called "hardened layer".

作為聚矽樹脂組成物並未特別限制,舉例為包含光增感劑之加成反應型聚矽氧樹脂組成物。加成反應型聚矽氧樹脂組成物係於由加成反應型聚矽氧樹脂與交聯劑所成之主劑中添加觸媒(例如鉑系觸媒)與光增感劑者,根據需要亦可添加加成反應抑制劑、剝離調整劑、黏著提升劑等。The composition of the polyanthracene resin is not particularly limited, and examples thereof include an addition reaction type polyfluorene oxide resin composition containing a photosensitizer. The addition reaction type polyoxo resin composition is a catalyst (for example, a platinum-based catalyst) and a photosensitizer added to the main component of the addition reaction type polyoxyxylene resin and a crosslinking agent, as needed. An addition reaction inhibitor, a peeling adjuster, an adhesion enhancer, or the like may also be added.

作為紫外線硬化型剝離組成物並未特別限制,可為習知之紫外線硬化型剝離組成物,可使用市售品。具體而言,可舉例為聚矽氧系、氟系、烷基側鏈系、長鏈烷基系之紫外線硬化型剝離性組成物。根據需要,亦可添加上述加成反應抑制劑、剝離調整劑、黏著提升劑等。又,紫外線硬化型剝離性組成物使矽偏析於表面較佳。The ultraviolet curable peeling composition is not particularly limited, and may be a conventional ultraviolet curable peeling composition, and a commercially available product can be used. Specifically, a polyoxymethylene-based, fluorine-based, alkyl side chain system, or long-chain alkyl-based ultraviolet curable exfoliating composition can be exemplified. The addition reaction inhibitor, the peeling adjuster, the adhesion promoter, and the like may be added as needed. Further, it is preferred that the ultraviolet curable exfoliating composition segregates cerium on the surface.

作為硬化層之形成方法,可為將由聚矽氧樹脂組成物或紫外線硬化型剝離組成物與根據期望使用之上述添加劑成分所成之塗佈液,藉由例如凹版塗佈法、棒塗佈法、噴霧塗佈法、旋轉塗佈法等塗佈於前述基材上。此時,基於塗佈液之黏度調整目的,亦可添加適當有機溶劑。作為有機溶劑並未特別限制,而可使用各種者。可使用例如以甲苯、己烷等之烴化合物為代表、乙酸乙酯、甲基乙基酮及該等之混合物等。The method for forming the hardened layer may be a coating liquid formed of a polyoxyxylene resin composition or an ultraviolet curable release composition and the above-described additive component, which is used as desired, by, for example, a gravure coating method or a bar coating method. A spray coating method, a spin coating method, or the like is applied to the substrate. At this time, an appropriate organic solvent may be added for the purpose of viscosity adjustment of the coating liquid. The organic solvent is not particularly limited, and various ones can be used. For example, a hydrocarbon compound such as toluene or hexane, a mixture of ethyl acetate, methyl ethyl ketone, and the like can be used.

(轉印基材面之轉印步驟)   本發明之透明導電性積層體之製造中,較好進而包含轉印基材面之轉印步驟。轉印基材面之轉印步驟係剝離轉印基材與由補助電極層及埋入樹脂層所成之面的步驟。   轉印基材與由補助電極層及透明樹脂層所成之面的剝離方法並未特別限制,可藉習知方法進行。藉由本轉印步驟,可成為由補助電極層及埋入樹脂層所成之表面平滑性優異者,可抑制濁度增加等,結果與提高透明導電性積層體之光學特性有關。(Transfer Step of Transfer Substrate Surface) In the production of the transparent electroconductive laminate of the present invention, it is preferred to further include a transfer step of transferring the substrate surface. The transfer step of the transfer substrate surface is a step of peeling off the transfer substrate and the surface formed by the auxiliary electrode layer and the embedded resin layer. The peeling method of the transfer substrate and the surface formed by the auxiliary electrode layer and the transparent resin layer is not particularly limited, and it can be carried out by a conventional method. By the present transfer step, the surface smoothness of the auxiliary electrode layer and the embedded resin layer can be excellent, and the increase in turbidity can be suppressed, and as a result, the optical characteristics of the transparent conductive laminated body can be improved.

(積層體形成步驟)   本發明之透明導電性積層體之製造中,亦可具有藉由層合法等積層不同積層體彼此之步驟。例如作為一態樣,可為將由轉印基材/補助電極層所成之積層體、與埋入樹脂層/透明氣體障蔽層/底塗層/透明基材所成之積層體予以積層,而作成轉印基材/補助電極層/埋入樹脂層/透明氣體障蔽層/底塗層/透明基材所成之積層體。作為其他態樣,可為將由轉印基材/補助電極層/埋入樹脂層所成之積層體、與透明氣體障蔽層/底塗層/透明基材所成之積層體予以積層,而作成轉印基材/補助電極層/埋入樹脂層/透明氣體障蔽層/底塗層/透明基材所成之積層體。進而作為其他態樣,可為將由轉印基材/補助電極層/埋入樹脂層/黏著層所成之積層體、與透明氣體障蔽層/底塗層/透明基材所成之積層體予以積層,或使由轉印基材/補助電極層/埋入樹脂層所成之積層體、與黏著層/透明氣體障蔽層/底塗層/透明基材所成之積層體予以積層,而作成轉印基材/補助電極層/埋入樹脂層/黏著層/透明氣體障蔽層/底塗層/透明基材所成之包含黏著層之積層體。任一情況下,均係自轉印基材/補助電極層之界面側剝離轉印基材,作成透明導電積層體,藉由於該透明導電積層體之由補助電極層與埋入樹脂層所成之面上成膜透明導電層,可製造本發明之透明導電性積層體。(Laminating Step Forming Step) In the production of the transparent conductive laminated body of the present invention, it is also possible to have a step of laminating different laminated bodies by lamination or the like. For example, in one aspect, a laminate formed of a transfer substrate/substrate electrode layer and a laminate formed of a buried resin layer/transparent gas barrier layer/undercoat layer/transparent substrate may be laminated. A laminate of the transfer substrate/substrate electrode layer/embedded resin layer/transparent gas barrier layer/undercoat layer/transparent substrate is formed. In another aspect, a laminate formed of a transfer substrate/substrate electrode layer/embedded resin layer and a laminate formed of a transparent gas barrier layer/undercoat layer/transparent substrate may be laminated. A laminate formed of a transfer substrate/substrate electrode layer/embedded resin layer/transparent gas barrier layer/undercoat layer/transparent substrate. Further, as another aspect, the laminate formed of the transfer substrate/substrate electrode layer/embedded resin layer/adhesive layer and the laminate of the transparent gas barrier layer/undercoat layer/transparent substrate may be used. Laminating or laminating a laminate formed of a transfer substrate/substrate electrode layer/embedded resin layer and an adhesive layer/transparent gas barrier layer/undercoat layer/transparent substrate to form a laminate The transfer substrate/substrate electrode layer/embedded resin layer/adhesive layer/transparent gas barrier layer/undercoat layer/transparent substrate is formed into a laminate including an adhesive layer. In either case, the transfer substrate is peeled off from the interface side of the transfer substrate/substance electrode layer to form a transparent conductive laminate, which is formed by the auxiliary electrode layer and the embedded resin layer of the transparent conductive laminate. The transparent conductive layer of the present invention can be produced by forming a transparent conductive layer on the surface.

依據本發明之製造方法,可製造同時具有優異光學特性及彎曲性之透明導電性積層體。 [實施例]According to the production method of the present invention, a transparent conductive laminate having excellent optical characteristics and flexibility can be produced. [Examples]

其次,藉由實施例更詳細說明本發明,但本發明不受該等例之限制。Next, the invention will be described in more detail by way of examples, but the invention is not limited by the examples.

針對實施例、比較例製作之透明導電積層體及透明導電性積層體進行以下評價、測定。結果示於表1、及表2-1、表2-2。 (a)彈性率   關於埋入樹脂層及黏著層(埋入樹脂層係於透明導電積層體形成後,黏著層係於形成後),使用動態超微小硬度計(島津製作所公司製,商品名「DUH-W201S」),藉以下測定條件進行負載-卸載試驗,自所得卸載曲線斜率算出彈性率。   彈性率可如實施例記載般測定,亦可於透明導電積層體製作後將透明導電積層體例如以鑽石刀等斜向切割,露出測定部位後,對於露出之測定部位,以垂直接觸動態超微小硬度計之壓子之方式進行測定,亦可藉由蝕刻等去除積層於測定部位上之其他層,使測定部位露出後進行測定。 <動態超微小硬度計測定條件>   壓子:三角錐壓子 稜間角115˚   試驗模式:負載-卸載模式   試驗力:1mN   負載速度:0.142mN/sec   保持時間:5sec   測定溫度:25℃、70℃ (b)玻璃轉移溫度Tg   實施例、比較例中,如後述,使用特定樹脂溶液,於厚1mm之載玻片上形成埋入樹脂層,使用黏彈性測定裝置(NETZSCH JAPAN公司製,DMA242 E Artemis),以測定頻率10Hz之拉伸模式於0~200℃之測定範圍,測定埋入樹脂層之儲存彈性率E’。又,測定損失彈性率E”,將賦予所得損失正切tanδ(=E”/E’)之峰值的測定溫度作為玻璃轉移溫度Tg。同樣,關於黏著層亦使用特定塗佈液形成黏著層,算出玻璃轉移溫度Tg。 (c)濁度   濁度係使用濁度計(日本電色工業公司製,HAZE METER NDH5000),依據JIS K 7136測定。 (d)薄片電阻值ρ   使用非接觸式電阻測定器(NAPSON公司製,型號:EC-80P),測定薄片電阻值ρ。 (e)水蒸氣透過率(WVTR)   使用水蒸氣透過率計(MOCON公司製,裝置名:AQUATRAN),依據JIS K 7129,測定40℃90%RH下之具有透明氣體障蔽層之透明導電性積層體的水蒸氣透過率(g・m-2 ・day-1 )。 (f)轉印性   硬化後之埋入樹脂層A與轉印基材未綴合(zipping),補助電極層可轉印至埋入樹脂層側之情況評價為○,發生綴合或與轉印基材接著時評價為×。   本發明中,所謂綴合意指「將轉印基材上之補助電極層自轉印基材轉印至埋入樹脂層側時,轉印基材之補助電極層滑動而未剝離,重複邊發出劈哩啪啦聲邊阻礙剝離之現象」。進行轉印時,有因發生綴合,而使補助電極層未自轉印基材剝離,而發生未轉印部分之情況。 (g)耐乾式成膜性   測定藉乾式成膜法於由補助電極層與埋入樹脂層所成之面上將透明導電層成膜50μm時之乾式成膜前後之濁度,依據下述基準評價耐乾式成膜性。所謂耐乾式成膜性意指因乾式成膜所致之濁度值變動。   〇:濁度上升為10%以下時   △:濁度上升超過10%且50%以下時   ×:濁度上升超過50%時 (h)彎曲性   使用重複彎曲試驗機(YUASA工機公司製),測定使彎曲部成為50mmφ之方式使透明導電性積層體之透明導電層凸部朝上之方式進行100次彎曲之前後薄片電阻值ρ,依據下述基準評價彎曲性。   〇:薄片電阻值變化為±0.5Ω/□以下時   △:薄片電阻值變化超過±0.5Ω/□且±1Ω/□以下時   ×:薄片電阻值變化超過±1Ω/□時 (i)耐濕熱性   於60℃95%RH環境下保存1000小時,隨後於23℃50%RH環境下保存24小時後,評價黏著性及薄片電阻值。   黏著性係自透明導電層起,根據埋入樹脂層及黏著層之膜厚,而選擇成為棋盤格狀之1mm至2mm寬之十字切割,以刀尖到達氣體障蔽層之方式實施,將黏著膠帶(NICHIBAN公司製,CELLOTAPE(註冊商標))貼於十字切割為該棋盤格狀之透明導電層面上,依據JIS K5600-5-6(十字切割法)之棋盤格膠帶法,進行CELLOTAPE(註冊商標)剝離試驗,依據下述基準,評價透明導電層、埋入樹脂層、黏著層之黏著性。又,關於黏著性,藉由下述基準進行判定。   〇:JIS K5600-5-6之表1中之評價結果分類為0~2   ×:JIS K5600-5-6之表1中之評價結果分類為3~5   薄片電阻值係以與前述薄片電阻值ρ同樣方法測定。The transparent conductive laminate and the transparent conductive laminate produced in the examples and the comparative examples were subjected to the following evaluation and measurement. The results are shown in Table 1, Table 2-1, and Table 2-2. (a) Elasticity ratio The embedded resin layer and the adhesive layer (the embedded resin layer is formed after the transparent conductive laminated body is formed, and the adhesive layer is formed after the formation), and a dynamic ultra-fine hardness tester (product name manufactured by Shimadzu Corporation) is used. "DUH-W201S") The load-unloading test was carried out under the following measurement conditions, and the elastic modulus was calculated from the slope of the obtained unloading curve. The elastic modulus can be measured as described in the examples, and after the transparent conductive laminated body is produced, the transparent conductive laminated body can be obliquely cut, for example, with a diamond knife or the like, and the exposed portion is exposed, and the exposed measurement portion is vertically contacted with dynamic ultrafine The measurement is carried out by means of a small hardness tester, and the other layer laminated on the measurement site may be removed by etching or the like, and the measurement site may be exposed and then measured. <Dynamic ultra-micro hardness tester> Pressure: Triangular cone angle 115 ̊ Test mode: Load-unload mode Test force: 1 mN Load speed: 0.142 mN/sec Hold time: 5 sec Measurement temperature: 25 ° C, 70°C (b) Glass transition temperature Tg In the examples and the comparative examples, a buried resin layer was formed on a glass slide having a thickness of 1 mm using a specific resin solution, and a viscoelasticity measuring device (DMAZSCH JAPAN, DMA242 E, DMA242 E) was used. Artemis) measures the storage elastic modulus E' of the embedded resin layer in a measurement range of 0 to 200 ° C in a tensile mode at a frequency of 10 Hz. Further, the loss elastic modulus E" was measured, and the measurement temperature at which the peak value of the obtained loss tangent tan δ (=E"/E') was applied was defined as the glass transition temperature Tg. Similarly, the adhesive layer was formed using a specific coating liquid for the adhesive layer, and the glass transition temperature Tg was calculated. (c) Turbidity turbidity was measured using a turbidimeter (HAZE METER NDH5000, manufactured by Nippon Denshoku Industries Co., Ltd.) in accordance with JIS K 7136. (d) Sheet resistance value ρ The sheet resistance value ρ was measured using a non-contact resistance measuring instrument (manufactured by NAPSON Corporation, model: EC-80P). (e) Water vapor transmission rate (WVTR) Using a water vapor transmission rate meter (manufactured by MOCON Corporation, device name: AQUATRAN), a transparent conductive layer having a transparent gas barrier layer at 40 ° C and 90% RH was measured in accordance with JIS K 7129. The water vapor transmission rate of the body (g·m -2 ·day -1 ). (f) The embedded resin layer A after the transfer hardening is not spliced with the transfer substrate, and the auxiliary electrode layer can be transferred to the side of the buried resin layer, and is evaluated as ○, and conjugation or conversion occurs. The printed substrate was then evaluated as x. In the present invention, the term "conjugation" means that when the auxiliary electrode layer on the transfer substrate is transferred from the transfer substrate to the side of the embedded resin layer, the auxiliary electrode layer of the transfer substrate slides without being peeled off, and is repeatedly emitted. The sound of squeaking hinders the peeling." When the transfer is performed, the auxiliary electrode layer is not peeled off from the transfer substrate due to the conjugation, and the untransferred portion is generated. (g) Dry film-forming property measurement The turbidity before and after dry film formation when the transparent conductive layer was formed into a film of 50 μm on the surface formed by the auxiliary electrode layer and the embedded resin layer by the dry film formation method, according to the following criteria The dry film forming resistance was evaluated. The dry film-forming property means a change in the turbidity value due to dry film formation. 〇: When the turbidity rises to 10% or less △: When the turbidity rises by more than 10% and is less than 50% × When the turbidity rises by more than 50% (h) The bending property is repeated using a bending tester (manufactured by YUASA Corporation) The sheet resistance value ρ was measured before the bending of the transparent conductive layer of the transparent conductive laminated body with the convex portion of the transparent conductive layer facing upward by 100 mm, and the bending property was evaluated in accordance with the following criteria. 〇: When the sheet resistance value changes to ±0.5 Ω/□ or less △: When the sheet resistance value changes by more than ±0.5 Ω/□ and ±1 Ω/□ or less ×: When the sheet resistance value changes by more than ±1 Ω/□ (i) Heat and humidity resistance The adhesiveness was stored in a 95% RH environment at 60 ° C for 1000 hours, and then stored in a 23 ° C 50% RH environment for 24 hours, and the adhesion and sheet resistance values were evaluated. The adhesive is formed from a transparent conductive layer, and is selected to be a checkerboard shape of 1 mm to 2 mm wide cross-cut according to the thickness of the embedded resin layer and the adhesive layer, and is implemented by the blade tip reaching the gas barrier layer, and the adhesive tape is applied. (CELLOTAPE (registered trademark) manufactured by NICHIBAN Co., Ltd.) is attached to a transparent conductive layer cut into a checkerboard pattern by a NICHIBAN company, and CELLOTAPE (registered trademark) is carried out according to the checkerboard tape method of JIS K5600-5-6 (Cross Cutting Method). In the peeling test, the adhesion of the transparent conductive layer, the embedded resin layer, and the adhesive layer was evaluated in accordance with the following criteria. Further, regarding the adhesion, the determination is made based on the following criteria. 〇: The evaluation results in Table 1 of JIS K5600-5-6 are classified as 0~2 ×: The evaluation results in Table 1 of JIS K5600-5-6 are classified into 3~5 sheet resistance values and the sheet resistance value ρ is measured in the same manner.

(實施例1)   於厚1mm之載玻片上,以塗敷器塗佈下述UV硬化系丙烯酸樹脂溶液A,於90℃乾燥2分鐘後,與剝離薄片B[經聚矽氧剝離處理之聚對苯二甲酸乙二酯膜](LINTEK公司製,SP-PET381031,厚38μm)貼合,使用輸送帶式UV照射裝置(HERAEUS公司製,高壓水銀燈)以累積光量為250 mJ/cm2 之方式自塗佈面進行照射,獲得埋入樹脂層A。又,硬化後之膜厚為50μm。該埋入樹脂層A自剝離薄片B剝離,測定儲存彈性率E’及損失彈性率E”,自所得損失正切tanδ測定玻璃轉移溫度Tg。 ※UV硬化系丙烯酸樹脂溶液A   對於UV硬化系丙烯酸樹脂(日本合成化學公司製,UT5746,固形分80質量%,乙酸乙酯溶液) 100質量份,添加光起始劑(BASF公司製,Irgacure 819) 1.5質量份之溶液。(Example 1) The following UV-curable acrylic resin solution A was applied onto a glass slide having a thickness of 1 mm by an applicator, and dried at 90 ° C for 2 minutes, and then peeled off with a sheet B [polyphosphorus stripping treatment). A polyethylene terephthalate film (manufactured by LINTEK Co., Ltd., SP-PET381031, thickness: 38 μm) was bonded, and a conveyor belt type UV irradiation device (manufactured by HERAEUS Co., Ltd., high pressure mercury lamp) was used to accumulate a light amount of 250 mJ/cm 2 . Irradiation was performed from the coated surface to obtain a buried resin layer A. Further, the film thickness after hardening was 50 μm. The embedded resin layer A was peeled off from the release sheet B, and the storage elastic modulus E' and the loss elastic modulus E" were measured, and the glass transition temperature Tg was measured from the obtained loss tangent tan δ. * UV-curable acrylic resin solution A for UV-curable acrylic resin (manufactured by Nippon Synthetic Chemical Co., Ltd., UT 5746, solid content: 80% by mass, ethyl acetate solution) 100 parts by mass of a photoinitiator (manufactured by BASF Corporation, Irgacure 819) was added in an amount of 1.5 parts by mass.

於無鹼玻璃(康寧公司製,EagleXG,100mm見方,0.7mm厚)上與上述同樣之塗佈/硬化條件以成為硬化後膜厚為25μm之方式塗佈UV硬化系丙烯酸樹脂組成物A,形成埋入樹脂層A,測定濁度Ha0 。結果示於表1。對於如此形成之埋入樹脂層A,以下述條件藉濺鍍法成膜透明導電層的ITO層,測定成膜後之濁度Ha1 。 ※透明導電層成膜條件   ・靶材:ITO(JX日礦日石金屬公司製,SnO2 -5wt%)   ・方法:DC磁控濺鍍   ・施加方式:DC500W   ・基材加熱:無   ・載氣:氬(Ar)   ・成膜壓力:0.6PaThe UV-curable acrylic resin composition A was applied to the same coating/hardening conditions as described above in an alkali-free glass (manufactured by Corning Co., Ltd., EagleXG, 100 mm square, 0.7 mm thick) so as to have a film thickness of 25 μm after curing. The resin layer A was buried, and the turbidity H a0 was measured. The results are shown in Table 1. With respect to the embedded resin layer A thus formed, an ITO layer of a transparent conductive layer was formed by sputtering under the following conditions, and the haze H a1 after film formation was measured. * Transparent conductive layer film formation conditions and target: ITO (SnO 2 -5wt%, manufactured by JX Nippon Mining & Metal Co., Ltd.) ・Method: DC magnetron sputtering ・Application method: DC500W ・Substrate heating: None, carrier gas : Argon (Ar) ・ Film formation pressure: 0.6Pa

[透明導電積層體A之製作]   作為用以印刷由銀細線所成之補助電極層的金屬膏(導電性組成物),使用銀膏(MITSUBOSHI BELTING公司製,商品名:低溫燒成導電膏MDot(註冊商標)),使用具有線寬30μm,間距1200μm之蜂窩構造之網版(印刷面積100mm見方),以網版印刷機(MICROTEC公司製,型號:MT-320TV),藉由印刷於轉印基材上形成補助電極層。印刷後,於70℃進行暫時乾燥1分鐘後,以輸送帶式熱風/IR燒成爐,於150℃進行10分鐘燒成。此處所用之轉印基材為東洋紡公司製之PET A4100 (100μm厚),未處理面為電極之印刷面。所得電極寬為40μm,高為7μm。   其次,於後述之具有透明氣體障蔽層之透明基材之透明氣體障蔽層側之面上以塗敷器塗佈UV硬化系丙烯酸樹脂組成物A,於90℃乾燥2分鐘。設置UV硬化系丙烯酸樹脂組成物A之面與設於前述轉印基材上之補助電極層面層合,獲得轉印基材/補助電極層/埋入樹脂層A/氣體障蔽層/底塗層/透明基材之積層體A。對於該積層體A,自具有透明氣體障蔽層之透明基材側藉由輸送帶式UV照射機(HERAEUS公司製,高壓水銀燈),以累積光量為250 mJ/cm2 進行照射,使積層體A中之埋入樹脂層A硬化(硬化後之埋入樹脂層A厚度:25μm)。最後,自由埋入樹脂層A與補助電極層所成之界面側剝離轉印基材,而製作於透明基材上介隔透明氣體障蔽層積層由具有開口部之補助電極層與埋入樹脂層A所成之複合層所得之透明導電積層體A,藉由動態超微小表面硬度計,測定埋入樹脂層A之25℃及70℃下之彈性率及濁度Hb0 。   接著,於補助電極層側,以與前述透明導電層成膜條件同樣,成膜透明導電層50nm,作成透明導電性積層體,測定濁度Hb1 、薄片電阻值ρ、水蒸氣透過率(WVTR)。[Production of Transparent Conductive Laminate A] As a metal paste (conductive composition) for printing a supplementary electrode layer made of a thin silver wire, a silver paste (manufactured by MITSUBOSHI BELTING Co., Ltd., trade name: low-temperature baking conductive paste MDot) is used. (registered trademark)), using a screen having a honeycomb structure with a line width of 30 μm and a pitch of 1200 μm (printing area: 100 mm square), using a screen printing machine (manufactured by MICROTEC, model: MT-320TV), by printing on a transfer A supplementary electrode layer is formed on the substrate. After printing, it was temporarily dried at 70 ° C for 1 minute, and then fired in a conveyor type hot air/IR baking furnace at 150 ° C for 10 minutes. The transfer substrate used here was PET A4100 (100 μm thick) manufactured by Toyobo Co., Ltd., and the untreated surface was the printed surface of the electrode. The obtained electrode had a width of 40 μm and a height of 7 μm. Next, the UV-curable acrylic resin composition A was applied by an applicator on the surface of the transparent gas barrier layer of the transparent substrate having the transparent gas barrier layer described later, and dried at 90 ° C for 2 minutes. The surface of the UV-curable acrylic resin composition A is laminated with the auxiliary electrode layer provided on the transfer substrate to obtain a transfer substrate/substrate electrode layer/buried resin layer A/gas barrier layer/primer layer / laminate A of transparent substrate. The laminate A was irradiated with a cumulative light amount of 250 mJ/cm 2 from a transparent substrate side having a transparent gas barrier layer by a conveyor belt type UV irradiation machine (manufactured by HERAEUS Co., Ltd., high pressure mercury lamp) to form a laminate A. The buried resin layer A was hardened (the thickness of the buried resin layer A after hardening: 25 μm). Finally, the transfer substrate is peeled off from the interface side formed by the freely embedded resin layer A and the auxiliary electrode layer, and the transparent gas barrier layer is formed on the transparent substrate, and the auxiliary electrode layer having the opening portion and the buried resin layer are formed. The transparent conductive laminated body A obtained from the composite layer formed by A was measured for the elastic modulus and turbidity H b0 at 25 ° C and 70 ° C of the embedded resin layer A by a dynamic ultra-fine surface hardness meter. Then, on the side of the auxiliary electrode layer, a transparent conductive layer of 50 nm was formed in the same manner as the film formation condition of the transparent conductive layer, and a transparent conductive laminated body was formed, and the haze H b1 , the sheet resistance value ρ, and the water vapor transmission rate (WVTR) were measured. ).

(透明氣體障蔽層之製作)   於透明基材(聚萘二甲酸乙二酯,帝人杜邦膜公司製,PENQ65 HWA,100μm厚)上,藉由棒塗佈法塗佈下述之底塗層形成用溶液,於70℃加熱乾燥1分鐘後,使用UV光照射燈(Fusion UV Systems JAPAN公司製,高壓水銀燈;累積光量100mJ/cm2 ,峰值強度1.466W,線速度20m/分鐘,通過次數2次)進行UV照射,形成厚1μm之底塗層。   於所得底塗層上,藉由旋轉塗佈法塗佈含全氫聚矽氮烷之溶液(AZ電子材料公司製,商品名:AZNL110A-20),所得塗膜於120℃加熱2分鐘,形成厚200nm之全氫聚矽氮烷層。進而,於所得全氫聚矽氮烷層上,藉由下述條件,電漿離子注入氬(Ar),形成經電漿離子注入之全氫聚矽氮烷層(以下稱為「無機層A」)。   其次,於無機層A上,除將全氫聚矽氮烷層厚設為150nm以外,與無機層A同樣重複2次形成氧氮化矽層(無機層B),積層透明氣體障蔽層。 ※底塗層形成用溶液   二季戊四醇六丙烯酸酯(新中村化學公司製,商品名:A-DPH) 20質量份溶解於甲基異丁基酮100質量份後,以對於固形分成為3質量%之方式添加光聚合性起始劑(BASF公司製,商品名:Irgacure 127)所得之溶液。   電漿離子注入係使用下述裝置,藉以下條件進行。 (電漿離子注入裝置)   RF電源:型號「RF56000」,日本電子公司製   高電壓脈衝電源:「PV-3-HSHV-0835」,粟田製作所公司製 <電漿離子注入條件>   ・電漿生成氣體:Ar   ・氣體流量:100sccm   ・佔空比:0.5%   ・重複頻率:1000Hz   ・施加電壓:-10kV   ・RF電源:頻率13.56MHz,施加電力1000W   ・腔室內壓:0.2Pa   ・脈衝寬:5sec   ・處理時間(離子注入時間):200sec   ・搬送速度:0.2m/min(Production of Transparent Gas Barrier Layer) The following undercoat layer was formed by a bar coating method on a transparent substrate (polyethylene naphthalate, manufactured by Teijin DuPont Co., Ltd., PENQ65 HWA, 100 μm thick). After heating and drying at 70 ° C for 1 minute with a solution, a UV light irradiation lamp (a high-pressure mercury lamp manufactured by Fusion UV Systems JAPAN Co., Ltd.; cumulative light amount of 100 mJ/cm 2 , peak intensity of 1.466 W, linear velocity of 20 m/min, number of passes 2 times was used. UV irradiation was performed to form an undercoat layer having a thickness of 1 μm. On the obtained undercoat layer, a solution containing perhydropolyazane (manufactured by AZ Electronic Materials Co., Ltd., trade name: AZNL110A-20) was applied by a spin coating method, and the resulting coating film was heated at 120 ° C for 2 minutes to form a coating film. A 200 nm thick perhydropolyazane layer. Further, on the obtained perhydropolyazide layer, plasma is ion-implanted with argon (Ar) to form a perhydrogenated azepine layer by plasma ion implantation (hereinafter referred to as "inorganic layer A". "). Next, on the inorganic layer A, a yttrium oxynitride layer (inorganic layer B) was formed twice as in the inorganic layer A except that the thickness of the perhydropolyazide layer was 150 nm, and a transparent gas barrier layer was laminated. * The solution for forming an undercoat layer, dipentaerythritol hexaacrylate (manufactured by Shin-Nakamura Chemical Co., Ltd., trade name: A-DPH), was dissolved in 100 parts by mass of methyl isobutyl ketone, and was 3% by mass for the solid content. In the same manner, a solution obtained by a photopolymerizable initiator (manufactured by BASF Corporation, trade name: Irgacure 127) was added. The plasma ion implantation was carried out under the following conditions using the following apparatus. (plasma ion implantation apparatus) RF power supply: model "RF56000", high voltage pulse power supply manufactured by JEOL Ltd.: "PV-3-HSHV-0835", "plasma ion implantation conditions" manufactured by Iwata Manufacturing Co., Ltd. : Ar ・Gas flow rate: 100sccm ・Duty ratio: 0.5% ・Repetition frequency: 1000Hz ・Applied voltage: -10kV ・RF power supply: Frequency 13.56MHz, applied power 1000W ・In-chamber pressure: 0.2Pa ・Pulse width: 5sec ・Processing Time (ion injection time): 200 sec ・Transportation speed: 0.2 m/min

(實施例2)   除了使用下述之UV硬化系丙烯酸樹脂溶液B形成埋入樹脂層B以外,與實施例1同樣製作透明導電積層體B,藉由動態超微小表面硬度計,測定埋入樹脂層B之25℃及70℃下之彈性率及透明導電積層體B之濁度Hb0 。其次,藉由積層透明導電層,作成透明導電性積層體,測定濁度Hb1 、薄片電阻值ρ、水蒸氣透過率(WVTR)。且,與實施例1同樣,測定埋入樹脂層B之玻璃轉移溫度Tg。 ※UV硬化系丙烯酸樹脂溶液B   對於UV硬化系胺基甲酸酯丙烯酸酯樹脂(日本合成化學公司製,UT5746,固形分80質量%,乙酸乙酯溶液) 100質量份,添加UV硬化系丙烯酸樹脂(東洋油墨公司製,UA-A1) 10質量份、光起始劑(BASF公司製,Irgacure 819) 1.5質量份之溶液。(Example 2) A transparent conductive laminate B was produced in the same manner as in Example 1 except that the embedded resin layer B was formed using the UV-curable acrylic resin solution B described below, and the embedded ultra-fine surface hardness meter was used to measure the embedding. The elastic modulus of the resin layer B at 25 ° C and 70 ° C and the haze H b0 of the transparent conductive laminate B. Next, a transparent conductive laminated body was formed by laminating a transparent conductive layer, and the haze H b1 , the sheet resistance value ρ, and the water vapor transmission rate (WVTR) were measured. Further, in the same manner as in Example 1, the glass transition temperature Tg of the embedded resin layer B was measured. * UV-curable acrylic resin solution B UV-curable acrylic resin was added to 100 parts by mass of UV-curable urethane acrylate resin (UT5746, manufactured by Nippon Synthetic Chemical Co., Ltd., solid content: 80% by mass, ethyl acetate solution). (UA-A1, manufactured by Toyo Ink Co., Ltd.) 10 parts by mass of a photoinitiator (manufactured by BASF Corporation, Irgacure 819) 1.5 parts by mass of a solution.

(比較例1)   除了使用下述之UV硬化系丙烯酸樹脂溶液C形成埋入樹脂層C以外,與實施例1同樣製作透明導電積層體C。測定埋入樹脂層C之25℃及70℃下之彈性率,但由於轉印不良,故無法測定透明導電積層體C之濁度Hb0 、濁度Hb1 等。又,與實施例1同樣,測定埋入樹脂層C之玻璃轉移溫度Tg。 ※UV硬化系丙烯酸樹脂溶液C   對於UV硬化系丙烯酸樹脂(日本合成化學公司製,UT5746,固形分80質量%,乙酸乙酯溶液) 100質量份,添加UV硬化系丙烯酸樹脂(東洋油墨公司製,UA-A1) 50份、光起始劑(BASF公司製,Irgacure 819) 1.5質量份之溶液。(Comparative Example 1) A transparent conductive laminated body C was produced in the same manner as in Example 1 except that the embedded resin layer C was formed using the UV-curable acrylic resin solution C described below. Although the elastic modulus at 25 ° C and 70 ° C of the embedded resin layer C was measured, the turbidity H b0 and the haze H b1 of the transparent conductive laminate C could not be measured due to poor transfer. Further, in the same manner as in Example 1, the glass transition temperature Tg of the embedded resin layer C was measured. * UV-curable acrylic resin solution C UV-curable acrylic resin (manufactured by Toyo Ink Co., Ltd.) was added to 100 parts by mass of UV-curable acrylic resin (UT5746, manufactured by Nippon Synthetic Chemical Co., Ltd., solid content: 80% by mass, ethyl acetate solution). UA-A1) 50 parts, a photoinitiator (manufactured by BASF Corporation, Irgacure 819) 1.5 parts by mass of a solution.

(比較例2)   除了使用下述之UV硬化系丙烯酸樹脂溶液D形成埋入樹脂層D以外,與實施例1同樣製作透明導電積層體D。測定埋入樹脂層D之25℃及70℃下之彈性率,但由於轉印不良,故無法測定透明導電積層體D之濁度Hb0 、濁度Hb1 等。又,與實施例1同樣,測定埋入樹脂層D之玻璃轉移溫度Tg。 ※UV硬化系丙烯酸樹脂溶液D   由UV硬化系丙烯酸樹脂(東洋油墨公司製,UA-A1)所成之溶液。(Comparative Example 2) A transparent conductive laminated body D was produced in the same manner as in Example 1 except that the embedded resin layer D was formed using the UV-curable acrylic resin solution D described below. Although the elastic modulus at 25 ° C and 70 ° C of the embedded resin layer D was measured, the turbidity H b0 , the haze H b1 , and the like of the transparent conductive laminate D could not be measured due to poor transfer. Further, in the same manner as in Example 1, the glass transition temperature Tg of the embedded resin layer D was measured. * UV-curable acrylic resin solution D A solution of UV-curable acrylic resin (UA-A1, manufactured by Toyo Ink Co., Ltd.).

(實施例3)   於厚1mm之載玻片上,以塗敷器塗佈下述黏著層塗佈液A,於90℃乾燥2分鐘後,與剝離薄片B[經聚矽氧剝離處理之聚對苯二甲酸乙二酯膜](LINTEK公司製,SP-PET381031,厚38μm)貼合,使用輸送帶式UV照射裝置(HERAEUS公司製,高壓水銀燈)以累積光量為250 mJ/cm2 之方式自塗佈面進行照射,獲得黏著層A。又,硬化後之膜厚為50μm。該黏著層A自剝離薄片B剝離,測定儲存彈性率E’及損失彈性率E”,自所得損失正切tanδ測定玻璃轉移溫度Tg。 ※黏著層塗佈液A   由UV硬化系丙烯酸樹脂(東洋油墨公司製,UA-A1,固形分100質量%)所成之塗佈液。   與實施例1同樣製作附補助電極層之轉印基材。藉由塗敷器於該轉印基材之補助電極層面側塗佈UV硬化系丙烯酸樹脂溶液A,於90℃乾燥2分鐘後,形成轉印基材/補助電極層/埋入樹脂層A(未硬化)之積層體B。   又,於與實施例1同樣形成之具有透明氣體障蔽層之透明基材的透明氣體障蔽層側藉由塗敷器塗佈黏著層A(UV硬化系丙烯酸樹脂(東洋油墨公司製,UA-A1)),自黏著層A側藉由輸送帶式UV照射裝置(HERAEUS公司製,高壓水銀燈)以累積光量為250mJ/cm2 之方式進行照射,形成黏著層A/透明氣體障蔽層/底塗層/透明基材之積層體C(硬化後黏著層A之厚度:5μm)。   此處,藉由動態超微小表面硬度計,測定積層體C之黏著層A於25℃下之彈性率。   其次,將積層體B之埋入樹脂層A與積層體C之黏著層A利用層合機予以貼合,自透明樹脂基材側藉由輸送帶式UV照射裝置(HERAEUS公司製,高壓水銀燈)以累積光量為250mJ/cm2 之方式進行照射,使積層體B中之埋入樹脂層A硬化(硬化後埋入樹脂層A之厚度:25μm)。最後,自由埋入樹脂層A與補助電極層所成之界面剝離轉印基材,而製作於透明樹脂基材上,介隔透明氣體障蔽層及密著層A,積層有由具有該口部之補助電極層與埋入樹脂層A所成之複合層的透明導電積層體E,藉由動態超微小表面硬度計測定埋入樹脂層A之25℃及70℃下之彈性率及濁度Hc0 。   進而,與實施例1同樣成膜50nm之透明導電層作成透明導電性積層體,評價濁度Hc1 、薄片電阻值ρ、水蒸氣透過率(WVTR)。(Example 3) On the glass slide having a thickness of 1 mm, the following adhesive layer coating liquid A was applied by an applicator, and dried at 90 ° C for 2 minutes, and then peeled off with a sheet B [poly-oxygen stripping treatment) Ethylene phthalate film (SP-PET381031, thickness: 38 μm) was used for bonding, and a conveyor belt type UV irradiation device (manufactured by HERAEUS Co., Ltd., high pressure mercury lamp) was used to accumulate light amount of 250 mJ/cm 2 . The coated surface was irradiated to obtain an adhesive layer A. Further, the film thickness after hardening was 50 μm. The adhesive layer A was peeled off from the peeling sheet B, and the storage elastic modulus E' and the loss elastic modulus E" were measured, and the glass transition temperature Tg was measured from the obtained loss tangent tan δ. * The adhesive layer coating liquid A was made of UV-curable acrylic resin (Toyo Ink) A coating liquid prepared by the company, UA-A1, solid content: 100% by mass. A transfer substrate with a supplementary electrode layer was produced in the same manner as in Example 1. The auxiliary electrode was applied to the transfer substrate by an applicator. The UV-curable acrylic resin solution A was applied to the layer side and dried at 90 ° C for 2 minutes to form a layered body B of the transfer substrate/substrate electrode layer/embedded resin layer A (unhardened). The adhesive layer A (UV-curable acrylic resin (UA-A1) manufactured by Toyo Ink Co., Ltd.), self-adhesive layer, was applied to the transparent gas barrier layer side of the transparent substrate having the transparent gas barrier layer formed thereon by an applicator. The side A was irradiated with a cumulative light amount of 250 mJ/cm 2 by a belt type UV irradiation apparatus (manufactured by HERAEUS Co., Ltd., high pressure mercury lamp) to form a laminate of the adhesive layer A/transparent gas barrier layer/undercoat layer/transparent substrate. Body C (thickness of the adhesive layer A after hardening: 5 μm). The elastic modulus of the adhesive layer A of the laminated body C at 25 ° C was measured by a dynamic ultra-small surface hardness tester. Next, the adhesive layer A of the laminated body B embedded in the resin layer A and the laminated body C was laminated by a laminating machine A The laminated resin was irradiated so that the cumulative amount of light was 250 mJ/cm 2 from the side of the transparent resin substrate by a conveyor type UV irradiation apparatus (manufactured by HERAEUS Co., Ltd., high pressure mercury lamp), and the resin layer A was embedded in the laminated body B. Hardening (thickness of the resin layer A embedded in the cured layer: 25 μm). Finally, the transfer substrate is peeled off by the interface between the resin layer A and the auxiliary electrode layer, and is formed on the transparent resin substrate to block the transparent gas. The barrier layer and the adhesion layer A are laminated with a transparent conductive laminate E having a composite layer of the auxiliary electrode layer and the embedded resin layer A, and the embedded resin is measured by a dynamic ultra-micro surface hardness meter. The elastic modulus and the turbidity H c0 of the layer A at 25 ° C and 70 ° C. Further, a transparent conductive layer of 50 nm was formed in the same manner as in Example 1 to form a transparent conductive laminated body, and the haze H c1 and the sheet resistance value ρ were evaluated. Water vapor transmission rate (WVTR).

(實施例4)   除了將黏著層A之膜厚變更為25μm以外,與實施例1同樣製作透明導電積層體F,評價透明導電積層體F之濁度Hc0 。其次,藉由積層透明導電層,作成透明導電性積層體,測定濁度Hb1 、薄片電阻值ρ、水蒸氣透過率(WVTR)。(Example 4) A transparent conductive laminated body F was produced in the same manner as in Example 1 except that the film thickness of the adhesive layer A was changed to 25 μm, and the haze H c0 of the transparent conductive laminated body F was evaluated. Next, a transparent conductive laminated body was formed by laminating a transparent conductive layer, and the haze H b1 , the sheet resistance value ρ, and the water vapor transmission rate (WVTR) were measured.

(實施例5)   除了將黏著層A之膜厚變更為50μm以外,與實施例1同樣製作透明導電積層體G,評價透明導電積層體G之濁度Hc0 。其次,藉由積層透明導電層,作成透明導電性積層體,測定濁度Hb1 、薄片電阻值ρ、水蒸氣透過率(WVTR)。(Example 5) A transparent conductive laminated body G was produced in the same manner as in Example 1 except that the film thickness of the adhesive layer A was changed to 50 μm, and the haze H c0 of the transparent conductive laminated body G was evaluated. Next, a transparent conductive laminated body was formed by laminating a transparent conductive layer, and the haze H b1 , the sheet resistance value ρ, and the water vapor transmission rate (WVTR) were measured.

(實施例6)   除了將黏著層A之膜厚變更為75μm以外,與實施例1同樣製作透明導電積層體H,評價透明導電積層體H之濁度Hc0 。其次,藉由積層透明導電層,作成透明導電性積層體,測定濁度Hb1 、薄片電阻值ρ、水蒸氣透過率(WVTR)。(Example 6) A transparent conductive laminated body H was produced in the same manner as in Example 1 except that the film thickness of the adhesive layer A was changed to 75 μm, and the haze H c0 of the transparent conductive laminated body H was evaluated. Next, a transparent conductive laminated body was formed by laminating a transparent conductive layer, and the haze H b1 , the sheet resistance value ρ, and the water vapor transmission rate (WVTR) were measured.

(實施例7)   於實施例3中,除了將埋入樹脂層A變更為由下述UV硬化系丙烯酸樹脂溶液E所成之埋入樹脂層E,以模嘴塗佈器於轉印基材正上方塗佈為1μm之厚(硬化後),於70乾燥30秒,另一方面,將黏著層A變更為由下述黏著層塗佈液B所成之黏著層B,以棒塗佈器塗佈為10μm之厚(硬化後)並硬化,進而貼合埋入樹脂層E及黏著層B以外,以與實施例3同樣之方法,製作透明導電積層體I,藉由動態超微小表面硬度計測定埋入樹脂層E之25℃及70℃下之彈性率及透明導電積層體I之濁度Hc0 。又,貼合前之硬化後黏著層B之25℃下之彈性率與實施例3同樣藉由動態超微小表面硬度計測定。   其次,藉由積層透明導電層,作成透明導電性積層體,測定濁度Hb1 、薄片電阻值ρ、水蒸氣透過率(WVTR)。   又,以與實施例1同樣方法,於厚1mm之載玻片上,使用UV硬化系丙烯酸樹脂溶液E,製作埋入樹脂層E(硬化後之膜厚:50μm),測定玻璃轉移溫度Tg。進而,以與實施例3同樣方法,於厚1mm之載玻片上,使用黏著層塗佈液B,製作黏著層B(硬化後之膜厚:50μm),測定玻璃轉移溫度Tg。 ※UV硬化系丙烯酸樹脂溶液E   將包含無機微粒子之UV硬化系丙烯酸樹脂(JSR公司製,OPSTAR Z7530,固形分73質量%,甲基乙基酮溶液)添加甲基乙基酮作為稀釋溶劑而調整為固形分30重量%後之溶液。 ※黏著層塗佈液B   對於UV硬化系丙烯酸樹脂(東亞合成公司製,UVX6125,固形分100質量%) 100質量份,添加1質量份之光起始劑(BASF公司製,Irgacure 819)、1質量份矽烷偶合劑(信越化學工業製,KBM903)所成之塗佈液。(Example 7) In Example 3, the embedded resin layer A was changed to the embedded resin layer E formed of the following UV-curable acrylic resin solution E, and the die coater was applied to the transfer substrate. The upper side is coated to a thickness of 1 μm (after hardening), and dried at 70 for 30 seconds. On the other hand, the adhesive layer A is changed to an adhesive layer B formed of the following adhesive layer coating liquid B, to a bar coater. After coating with a thickness of 10 μm (after hardening) and curing, and bonding the resin layer E and the adhesive layer B, the transparent conductive laminated body I was produced in the same manner as in Example 3, by dynamic ultra-fine surface. The modulus of hardness of the resin layer E embedded at 25 ° C and 70 ° C and the haze H c0 of the transparent conductive laminate I were measured by a durometer . Further, the elastic modulus at 25 ° C of the adhesive layer B after curing before bonding was measured by a dynamic ultra-small surface hardness meter in the same manner as in Example 3. Next, a transparent conductive laminated body was formed by laminating a transparent conductive layer, and the haze H b1 , the sheet resistance value ρ, and the water vapor transmission rate (WVTR) were measured. Further, in the same manner as in Example 1, a UV-curable acrylic resin solution E was used to form a buried resin layer E (thickness: 50 μm after curing) on a glass slide having a thickness of 1 mm, and the glass transition temperature Tg was measured. Further, in the same manner as in Example 3, an adhesive layer B (cured film thickness: 50 μm) was formed on a glass slide having a thickness of 1 mm using an adhesive layer coating liquid B, and the glass transition temperature Tg was measured. * UV-curable acrylic resin solution E UV-curable acrylic resin (OPSTAR Z7530, solid content 73% by mass, methyl ethyl ketone solution) containing inorganic fine particles was added with methyl ethyl ketone as a dilution solvent. It is a solution after the solid content is 30% by weight. *Adhesive layer coating liquid B To 100 parts by mass of a UV-curable acrylic resin (UVX6125, a solid content of 100% by mass), 1 part by mass of a photoinitiator (Irgacure 819, manufactured by BASF Corporation), 1 A coating liquid of a mass part of a decane coupling agent (manufactured by Shin-Etsu Chemical Co., Ltd., KBM903).

(實施例8)   除了將黏著層A之硬化後厚度設為100μm以外,與實施例3同樣製作透明導電積層體J,評價透明導電積層體J之濁度Hc0 。其次,藉由積層透明導電層,作成透明導電性積層體,測定濁度Hb1 、薄片電阻值ρ、水蒸氣透過率(WVTR)。(Example 8) A transparent conductive laminated body J was produced in the same manner as in Example 3 except that the thickness of the adhesive layer A was 100 μm, and the turbidity H c0 of the transparent conductive laminated body J was evaluated. Next, a transparent conductive laminated body was formed by laminating a transparent conductive layer, and the haze H b1 , the sheet resistance value ρ, and the water vapor transmission rate (WVTR) were measured.

如由表1所了解,可知藉由控制埋入樹脂之彈性率,可獲得具有優異光學特性(濁度小)及彎曲性之透明導電性積層體。又,如由表2-1、表2-2所了解,可知藉由積層具有比埋入樹脂層之彈性率更低的彈性率之黏著層與埋入樹脂層,可獲得彎曲性及黏著性更優異之透明導電性積層體。 [產業上之可利用性]As is understood from Table 1, it is understood that a transparent conductive laminate having excellent optical characteristics (small haze) and flexibility can be obtained by controlling the elastic modulus of the embedded resin. Further, as is understood from Table 2-1 and Table 2-2, it is understood that the adhesive layer and the embedded resin layer having a lower modulus of elasticity than the embedded resin layer can be used to obtain flexibility and adhesion. A more excellent transparent conductive laminate. [Industrial availability]

本發明之透明導電性積層體由於同時具有優異光學特性及彎曲性,進而薄片電阻值小,故即使於必須大面積化之可撓性太陽電池元件或有機電致發光元件等之裝置等中亦可使用。Since the transparent conductive laminated body of the present invention has excellent optical characteristics and flexibility at the same time, and has a small sheet resistance value, it is also used in a device such as a flexible solar cell element or an organic electroluminescence device which is required to have a large area. be usable.

1A、1B‧‧‧透明導電性積層體1A, 1B‧‧‧Transparent conductive laminate

2‧‧‧透明基材2‧‧‧Transparent substrate

3‧‧‧埋入樹脂層3‧‧‧ buried in the resin layer

4‧‧‧補助電極層4‧‧‧Assisted electrode layer

5‧‧‧透明導電層5‧‧‧Transparent conductive layer

6‧‧‧底塗層6‧‧‧Undercoat

7‧‧‧透明氣體障蔽層7‧‧‧Transparent gas barrier

8‧‧‧密著層8‧‧‧Adhesive layer

9‧‧‧開口部9‧‧‧ openings

圖1係顯示本發明之透明導電性積層體的構成之一例的剖面圖。   圖2係顯示本發明之透明導電性積層體的構成之另一例的剖面圖。Fig. 1 is a cross-sectional view showing an example of a configuration of a transparent conductive laminate of the present invention. Fig. 2 is a cross-sectional view showing another example of the structure of the transparent electroconductive laminate of the present invention.

Claims (13)

一種透明導電性積層體,其係在透明基材上至少包含埋入樹脂層、補助電極層、及透明導電層之透明導電性積層體,   且前述透明導電層係由金屬氧化物而成,前述埋入樹脂層在25℃下之彈性率為3000~8000MPa,且在70℃下之彈性率為1000~7000MPa。A transparent conductive layered body comprising at least a transparent conductive layered body in which a resin layer, a supplementary electrode layer, and a transparent conductive layer are embedded on a transparent substrate, wherein the transparent conductive layer is made of a metal oxide, and the The embedding resin layer has an elastic modulus at 25 ° C of 3000 to 8000 MPa, and an elastic modulus at 70 ° C of 1000 to 7000 MPa. 如請求項1之透明導電性積層體,其中,前述埋入樹脂層之玻璃轉移溫度為90℃以上。The transparent conductive laminated body according to claim 1, wherein the glass transition temperature of the embedded resin layer is 90 ° C or higher. 如請求項1或2之透明導電性積層體,其中,前述埋入樹脂層之膜厚為0.1~100μm。The transparent conductive laminated body according to claim 1 or 2, wherein the buried resin layer has a film thickness of 0.1 to 100 μm. 如請求項1~3中任1項之透明導電性積層體,其中,前述透明導電性積層體進一步在與前述埋入樹脂層之透明導電層相反之面上包含黏著層。The transparent conductive laminated body according to any one of claims 1 to 3, wherein the transparent conductive laminated body further includes an adhesive layer on a surface opposite to the transparent conductive layer embedded in the resin layer. 如請求項4之透明導電性積層體,其中,前述黏著層之玻璃轉移溫度為40℃以上。The transparent conductive laminated body according to claim 4, wherein the adhesive layer has a glass transition temperature of 40 ° C or higher. 如請求項4或5之透明導電性積層體,其中,前述黏著層之膜厚為1~120μm。The transparent conductive laminated body according to claim 4 or 5, wherein the adhesive layer has a film thickness of 1 to 120 μm. 如請求項4~6中任1項之透明導電性積層體,其中,前述黏著層在25℃下之彈性率為100~3000MPa。The transparent conductive laminated body according to any one of claims 4 to 6, wherein the adhesive layer has an elastic modulus at 25 ° C of 100 to 3000 MPa. 如請求項1~7中任1項之透明導電性積層體,其中,前述透明導電性積層體進一步在透明基材上包含透明氣體障蔽層。The transparent conductive laminated body according to any one of claims 1 to 7, wherein the transparent conductive laminated body further comprises a transparent gas barrier layer on the transparent substrate. 如請求項8之透明導電性積層體,其中,前述透明導電性積層體進一步在前述埋入樹脂層與透明氣體障蔽層之間包含黏著層。The transparent conductive laminated body according to claim 8, wherein the transparent conductive laminated body further includes an adhesive layer between the embedded resin layer and the transparent gas barrier layer. 如請求項1之透明導電性積層體,其中,前述金屬氧化物以濺鍍法成膜。The transparent conductive laminated body according to claim 1, wherein the metal oxide is formed by sputtering. 一種太陽電池元件或有機電致發光元件,其係具有如請求項1~10中任1項之透明導電性積層體。A solar cell element or an organic electroluminescence device having the transparent electroconductive laminate according to any one of claims 1 to 10. 一種透明導電性積層體之製造方法,其係在透明基材上至少包含埋入樹脂層、補助電極層、及透明導電層,且該透明導電層係由金屬氧化物而成,前述埋入樹脂層在25℃下之彈性率為3000~8000MPa,且在70℃下之彈性率為1000~7000MPa之透明導電性積層體之製造方法,且包含:   形成前述補助電極層之步驟、   在該補助電極層之開口部、或補助電極層上及開口部形成前述埋入樹脂層之步驟、及   形成前述透明導電層之步驟。A method for producing a transparent conductive laminated body comprising at least a buried resin layer, a supplementary electrode layer, and a transparent conductive layer on a transparent substrate, wherein the transparent conductive layer is made of a metal oxide, and the embedded resin a method for producing a transparent conductive laminated body having an elastic modulus of 3,000 to 8,000 MPa at 25 ° C and an elastic modulus of 1000 to 7000 MPa at 70 ° C, and comprising: a step of forming the auxiliary electrode layer, and the auxiliary electrode The step of forming the buried resin layer on the opening of the layer, or the auxiliary electrode layer and the opening, and the step of forming the transparent conductive layer. 如請求項12之透明導電性積層體之製造方法,其中,進一步包含形成黏著層之步驟及/或形成透明氣體障蔽層之步驟。The method for producing a transparent conductive laminate according to claim 12, further comprising the step of forming an adhesive layer and/or forming a transparent gas barrier layer.
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CN107405880B (en) * 2015-03-27 2020-06-30 琳得科株式会社 Film for laminating transparent conductive layer, method for producing same, and transparent conductive film
JP6787584B2 (en) * 2015-11-06 2020-11-18 リンテック株式会社 Film for laminating transparent conductive layer, its manufacturing method, and transparent conductive film

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