TW201833388A - Mask for vapor deposition, forming method and manufacturing method of the same preventing the mask main body from shifting away from the correct position and capable of inhibiting deformation of mask and substrate - Google Patents

Mask for vapor deposition, forming method and manufacturing method of the same preventing the mask main body from shifting away from the correct position and capable of inhibiting deformation of mask and substrate Download PDF

Info

Publication number
TW201833388A
TW201833388A TW106145884A TW106145884A TW201833388A TW 201833388 A TW201833388 A TW 201833388A TW 106145884 A TW106145884 A TW 106145884A TW 106145884 A TW106145884 A TW 106145884A TW 201833388 A TW201833388 A TW 201833388A
Authority
TW
Taiwan
Prior art keywords
frame
mask
vapor deposition
displacement
main body
Prior art date
Application number
TW106145884A
Other languages
Chinese (zh)
Other versions
TWI804481B (en
Inventor
小林良弘
田丸裕仁
上原基志
石川樹一郎
Original Assignee
日商麥克賽爾控股股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商麥克賽爾控股股份有限公司 filed Critical 日商麥克賽爾控股股份有限公司
Publication of TW201833388A publication Critical patent/TW201833388A/en
Application granted granted Critical
Publication of TWI804481B publication Critical patent/TWI804481B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00—Electroforming
    • C25D1/10—Moulds; Masks; Masterforms
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Electrochemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Provided is a mask for vapor deposition in which deformation of the holding frame portion and the mask main body is less likely to occur by means of the reinforcing frame portion of the frame body, thereby preventing the mask main body from shifting away from the correct position, so that the accuracy of vapor deposition is improved. A holding frame portion (4) holds the mask main body (2) on the inner side of the frame (3), and the reinforcing frame portion (5) by which the rigidity of the frame (3) against the stress of the mask main body (2) is set to increase, so that it is possible to stop each part of the mask main body (2) from being shifted away from the proper position, therefore, each part is fixedly arranged to the evaporation apparatus, which secures the alignment state between the mask and the deposition target substrate, thereby enabling the evaporation to perform on the evaporation target substrate at proper position with high accuracy.

Description

蒸鍍用遮罩、其設置方法及製造方法Mask for vapor deposition, method of setting same, and manufacturing method

[0001] 本發明涉及蒸鍍遮罩、其設置方法及製造方法，可適用於例如在透過蒸鍍遮罩法而形成有機EL元件的發光層之際所使用的有機EL元件用的蒸鍍遮罩及此蒸鍍遮罩的設置、製造等。[0001] The present invention relates to a vapor deposition mask, a method of providing the same, and a method for producing the same, which is applicable to, for example, vapor deposition of an organic EL element used for forming a light-emitting layer of an organic EL element by a vapor deposition mask method. The cover and the installation, manufacture, and the like of the vapor deposition mask.

[0002] 形成有機EL(Electroluminescence)元件的發光層的方法方面，泛用蒸鍍遮罩法。在此蒸鍍遮罩法，為了將有機發光物質蒸鍍形成於由玻璃等的透明材質所成的基板上的期望的位置，使用將與基板的蒸鍍部位對應之處進行除去穿孔的蒸鍍遮罩。 　　[0003] 於進行蒸鍍的蒸鍍裝置，將蒸鍍遮罩在相對於作為蒸鍍對象的基板正確地進行位置對準的狀態下進行設置，執行蒸鍍。其中，蒸鍍之際為了使蒸鍍裝置內為可蒸鍍的環境，一般而言進行加熱，故蒸鍍遮罩與玻璃基板的熱變形狀態不同的情況下，蒸鍍遮罩與基板的相對位置關係變化，存在變得無法滿足所形成的發光層的要求的精度如此的問題。 　　[0004] 近年來，已提出一種蒸鍍遮罩，採用一種遮罩構造，該遮罩構造係在薄的遮罩主體之外周緣，配裝由具有與玻璃等的被蒸鍍基板同等的熱脹係數的素材或低熱膨脹係數的素材所成的補強用的框體，使得即使採用熱脹係數與被蒸鍍基板不同的素材製的遮罩主體，仍可成為遮罩主體追隨具有與被蒸鍍基板同等的熱脹係數的框體的膨脹而形狀變化、或被具有低熱膨脹係數的框體抑制而不形狀變化的狀態，可擔保在蒸鍍裝置內的升溫時之相對於被蒸鍍基板的遮罩主體的整合精度，高精度地在被蒸鍍基板上形成發光層。 　　[0005] 如此的歷來的蒸鍍遮罩的一例方面，存在已揭露於日本特開2005-15908號公報者。 [先前技術文獻] [專利文獻] 　　[0006] 　　[專利文獻1]日本特開2005-15908號公報[0002] In terms of a method of forming a light-emitting layer of an organic EL (Electroluminescence) element, a vapor deposition mask method is generally used. In the vapor deposition mask method, in order to deposit an organic light-emitting material at a desired position on a substrate made of a transparent material such as glass, vapor deposition is performed to remove perforations corresponding to the vapor deposition portion of the substrate. Mask. [0003] In the vapor deposition device that performs vapor deposition, the vapor deposition mask is placed in a state in which the substrate to be vapor-deposited is correctly aligned, and vapor deposition is performed. In the case of vapor deposition, in order to make the inside of the vapor deposition device vapor-depositable, heating is generally performed. Therefore, when the vapor deposition mask is different from the thermal deformation state of the glass substrate, the vapor deposition mask and the substrate are opposed to each other. The positional relationship changes, and there is a problem that the accuracy of the required light-emitting layer cannot be satisfied. [0004] In recent years, a vapor deposition mask has been proposed which adopts a mask structure which is attached to the periphery of a thin mask main body and is provided with heat equivalent to that of a vapor-deposited substrate such as glass. The frame for reinforcement by the material of the expansion coefficient or the material of the low thermal expansion coefficient enables the mask body to follow and be steamed even if the mask body made of a material having a thermal expansion coefficient different from that of the vapor-deposited substrate is used. The state in which the frame having the same thermal expansion coefficient of the plated substrate is expanded and the shape is changed, or the frame having a low thermal expansion coefficient is suppressed and the shape is not changed, and the temperature of the vapor deposition device relative to the vapor-deposited substrate can be secured. The integration precision of the mask main body forms a light-emitting layer on the vapor-deposited substrate with high precision. [0005] An example of such a conventional vapor deposition mask is disclosed in Japanese Laid-Open Patent Publication No. 2005-15908. [Prior Art Document] [Patent Document] [0006] [Patent Document 1] Japanese Patent Laid-Open Publication No. 2005-15908

[發明所欲解決之問題] 　　[0007] 歷來的蒸鍍遮罩具有示於前述專利文獻的構成，可抑制因熱脹係數的差異所致的遮罩與基板的相對變形，防止蒸鍍形成物的位置精度的明顯不良化。 　　[0008] 然而，市場上要求進一步的高精度化，尋求進一步抑制遮罩的位移所致的偏移的發生。然而，歷來的遮罩主體與框體的組合構造的情況下，需要亦薄化補強用的框體，故在採此方式下的基於薄型的框體下的高強度化方面存在極限，無法僅以框體確保亦可迴避由於遮罩主體側的應力的影響所致的些微的變形的剛性。為此，在歷來的遮罩構造，難以使遮罩主體的位移落入隨著高精度化而變嚴的容許範圍，具有無法迴避由於蒸鍍形成物的位置偏移所致的良率的不良化如此的課題。 　　[0009] 本發明係為了消解前述課題而創作者，目的在於提供一種蒸鍍遮罩及蒸鍍遮罩之設置方法，該蒸鍍遮罩係以框體的補強框部作成不易發生保持框部與遮罩主體的變形，抑制遮罩主體的從正確位置的偏移，提升蒸鍍相關的精度者，該蒸鍍遮罩之設置方法係可將就蒸鍍遮罩的遮罩主體進行保持的保持框部適切地固定於蒸鍍裝置側，獲得將遮罩主體精度佳地定位的狀態者。 [解決問題之技術手段] 　　[0010] 本發明的揭示相關的蒸鍍遮罩係一種蒸鍍遮罩，具備依既定圖案設置獨立的多數個蒸鍍通孔的遮罩主體、與遮罩主體一體地配設的框體，前述框體具有與遮罩主體進行連結一體化的保持框部、與該保持框部一體地配設的補強框部。 　　[0011] 如此般依本發明的揭示時，對於框體中的保持遮罩主體的保持框部，配設將其補強的補強框部，提高對於遮罩主體的應力之框體的剛性，從而可在抑制遮罩主體各部分的從本來應在位置的偏移的狀態下，固定設置於蒸鍍裝置，可確保遮罩與被蒸鍍基板的整合狀態，可精度佳地進行蒸鍍於被蒸鍍基板的適切的位置。 　　[0012] 此外，本發明的揭示相關的蒸鍍遮罩，係酌情在前述框體的保持框部與補強框部的邊界部分設置分離用加工部，該分離用加工部係作成規則或不規則且線狀地排列複數個貫穿孔或凹部中的至少任一者的配置、或作成溝線狀地連續的配置者。 　　[0013] 如此般依本發明的揭示時，在框體的保持框部與補強框部的邊界部分設置分離用加工部，作成將補強框部從保持框部分離之際的加工對象位置，使得往蒸鍍裝置側的框體保持框部及遮罩主體的定位、固定之後等透過補強框部下的框體的剛性確保成為非必要的情況下，可輕易進行從補強框部的保持框部的分離加工，可平順地轉移至透過蒸鍍裝置所為的蒸鍍程序，並可在不對作為框體而殘留的保持框部的形狀、基於保持框部的遮罩主體的補強狀態造成影響下將補強框部分離，可無問題地進行之後的蒸鍍程序。 　　[0014] 此外，本發明的揭示相關的蒸鍍遮罩，係酌情使前述遮罩主體在予以殘存試圖對框體朝內側收縮的應力的狀態下與框體的保持框部一體化而成，使前述框體為預先假定基於前述應力之力施加於框體的狀態而算出框體各部分的預想變形量而成者，前述分離用加工部設定為以下形狀：在設置前述框體的分離用加工部的位置的前述預想變形量越大，在該位置使作為前述貫穿孔、凹部或溝而被除去的部分的大小的相對於不被除去的殘餘部分的比例越小。 　　[0015] 如此般依本發明的揭示時，使框體為預先估計基於遮罩主體的應力的力所致的框體各部分的預想變形量者，將此框體的分離用加工部的除去部分設定為，在遮罩主體的應力所致的框體的預想變形量變大的位置，使除去部分相對於不被除去的殘餘部分之比例變小，另一方面在遮罩主體的應力所致的框體的預想變形量變小的位置，使除去部分相對於不被除去的殘餘部分的比例變大，使分離用加工部為依框體各部位的變形可能性而將除去部分進行增減調整的形狀，使得在因遮罩主體的應力而預期大的框體的變形的位置，減小在分離用加工部的凹部等的除去部分的比例而充分確保框體的強度，另一方面在不易施加在框體的遮罩主體的應力的位置，增加分離用加工部的除去部分的比例，在確保適切的強度之下提高補強框部分離加工時的加工效率，可進行補強框部的迅速的分離而平順地轉移至蒸鍍程序。 　　[0016] 此外，本發明的揭示相關的蒸鍍遮罩，係酌情使前述分離用加工部為在保持框部與補強框部的邊界部分被線狀地連續配置的溝、在該溝內往溝連續方向以形成既定間隔的配置而穿設複數個的貫穿孔的組合形狀，該貫穿孔在貫穿孔的溝的連續的方向的端部設置銳角的切槽部。 　　[0017] 如此般依本發明的揭示時，使框體的分離用加工部為溝與貫穿孔的組合構造，並使貫穿孔往溝的連續方向局部延伸而予以產生銳角的切槽部，使得在就分離用加工部進行切斷加工而分離框體的補強框部之際，輕易以切槽部為起點沿著分離用加工部生成切剖面，使得不易於保持框部側殘留毛邊等，不會對於附隨蒸鍍程序的諸作業造成不良影響。 　　[0018] 此外，本發明的揭示相關的蒸鍍遮罩之設置方法，係在蒸鍍裝置的預先設定的位置設置蒸鍍遮罩，使前述蒸鍍遮罩為，對於以既定圖案設置獨立的多數個蒸鍍通孔的複數個遮罩主體，將分別具有保持框部與補強框部的框體以包圍遮罩主體之外側的方式配置而製造者，該保持框部係可與遮罩主體之外周緣一體地連結者，該補強框部係以連續包圍該保持框部之外側的配置與保持框部一體地配設者；對在前述蒸鍍裝置的蒸鍍遮罩支承用的框件，一體地固定蒸鍍遮罩的框體的保持框部，對固定於前述框件的狀態下的框體的保持框部，將補強框部分離而除去。 　　[0019] 如此般依本發明的揭示時，將連結以配置於保持框部之外側的補強框部提高強度而作成不易變形的框體與複數個遮罩主體的蒸鍍遮罩，於蒸鍍裝置的框件固定框體的保持框部，從而獲得被蒸鍍裝置支撐的狀態，使得可維持在框體抑制遮罩主體的變形的狀態下將蒸鍍遮罩設置於蒸鍍裝置，防止遮罩主體的位移而確保遮罩與被蒸鍍基板的整合狀態，提高蒸鍍的精度而使蒸鍍製品的良率提升。此外，框體的往蒸鍍裝置的固定後將補強框部從保持框部分離，使得補強框部不會成為蒸鍍遮罩的固定支承之後的程序的障礙，可無問題地進行利用蒸鍍裝置下的蒸鍍。 　　[0020] 此外，本發明的揭示相關的蒸鍍遮罩之設置方法，係使前述框體為具有矩形狀之外形者，包含第一程序、第二程序、第三程序、第四程序、第五程序，該第一程序係在蒸鍍遮罩的完成狀態下，就與在框體及遮罩主體各位置的矩形狀的框體外周各邊平行的兩方向的位移進行測定者，該第二程序係既定位置的向內的位移不會落入預先設定的容許範圍的情況下，對位於產生最大的位移的位置之外側的框體外周部，將與最大位移的方向平行的向外的既定的拉伸力，作為如前述位置的位移落入前述容許範圍的大小的力而施加者，該第三程序係在施加拉伸力的狀態下重新測定框體及遮罩主體各位置的前述兩方向的位移者，該第四程序係在該測定後，新產生向內的位移不落入前述容許範圍的位置的情況下，在維持施加拉伸力的狀態之下，對位於新產生最大的位移的位置之外側的框體外周部，將與新的最大位移的方向平行的向外的既定的拉伸力，作為如前述位置的位移落入前述容許範圍的大小的力而進一步施加者，該第五程序係在位於已施加拉伸力的框體外周部的內側的任一位置，測定出伴隨之後的其他拉伸力附加將使得向外的位移不落入預先設定的容許範圍的狀態的情況下，為了使前述位置的位移落入容許範圍，進行將施加於前述位置之外側的框體外周部的拉伸力減小的調整者，重複進行前述第三至第五各程序，直到在框體及遮罩主體各位置的測定位移落入容許範圍，將位移落入容許範圍的蒸鍍遮罩的框體中的保持框部，在維持將拉伸力附加於框體之下固定於前述框體，在固定後解除往框體的拉伸力的附加。 　　[0021] 如此般依本發明的揭示時，作成重複將對可能因遮罩主體的應力而產生大的變形的框體的既定位置從外部施加拉伸力而使位移落入容許範圍的程序，直到成為位移在框體及遮罩主體的任一位置皆落入容許範圍的狀態，在保持位移落入容許範圍的框體及遮罩主體的狀態下將框體的保持框部固定於框件，將蒸發遮罩設置於蒸發裝置的狀態後，解放施加於框體的拉伸力，從而可在就在蒸發遮罩的伴隨框體的變形的遮罩主體的從正確的位置的偏移，以透過外力的附加按框體抑制變形的手法確實進行防範之下，將框體固定於框件，可確保蒸鍍遮罩的往蒸鍍裝置的適切的設置狀態，可使蒸鍍相關的精度進一步提升。 　　[0022] 此外，本發明的揭示相關的蒸鍍遮罩之製造方法，該蒸鍍遮罩係由設置多數個蒸鍍通孔的金屬製的複數個遮罩主體、包圍遮罩主體之外側而配置的金屬製的框體所成者，該製造方法包含第1電鑄程序、框體配設程序、框體加工程序、第2電鑄程序、剝離程序，該第1電鑄程序係在母模上的複數個既定位置以金屬的電鑄形成與前述遮罩主體對應的一次電鍍層者，該框體配設程序係在以前述一次電鍍層位於預先設於前述框體的複數個開口內的方式進行位置對準之下，將框體配置於母模上者，該框體加工程序係將分離用加工部設於框體者，該分離用加工部係對前述框體進行既定的除去加工，作成規則或不規則且線狀地排列複數個貫穿孔或凹部中的至少任一者的配置、或作成溝線狀地連續的配置者，該第2電鑄程序係於從前述框體的一部分或全部的表面跨至前述一次電鍍層之外周緣表面的既定範圍，以電鑄形成金屬層，經由該金屬層將框體與一次電鍍層一體地連結為不會分離者，該剝離程序係從前述母模將一體的一次電鍍層、框體及金屬層剝離者。 　　[0023] 如此般依本發明的揭示時，在母模上形成成為遮罩主體的一次電鍍層，以位於此一次電鍍層的周圍的方式配置框體，進一步在從框體表面跨至一次電鍍層之外周緣表面的既定範圍形成供於將此等框體與一次電鍍層連結用的金屬層的過程之中，對框體透過既定的除去加工而設置分離用加工部，使得可從母模將一次電鍍層、框體及金屬層一體地剝離而獲得蒸鍍遮罩的狀態下，於框體設定以分離用加工部為邊界而將內側的遮罩主體一體地保持的區域、將外側的框體整體進行補強的區域，使比外側的區域比框體的分離用加工部充分大，即可提高對於基於遮罩主體的應力而從遮罩主體施加於框體之力的框體的剛性，可在抑制遮罩主體各部分的從本來應在位置的偏移的狀態下，將蒸鍍遮罩固定設置於蒸鍍裝置，可確保遮罩與被蒸鍍基板的整合狀態，可精度佳地進行蒸鍍於被蒸鍍基板的適切的位置。此外，往蒸鍍裝置側的蒸鍍遮罩的固定設置後，基於比框體的分離用加工部靠外側的區域的框體的剛性確保成為非必要的情況下，在分離用加工部進行分離加工從而可輕易分離框體之外側區域部分，可平順地轉移至透過蒸鍍裝置所為的蒸鍍程序，並可在不對於作為框體而殘留的內側區域部分的形狀、據此的遮罩主體的保持狀態造成影響下將外側區域部分分離，可無問題地進行之後的蒸鍍程序。[Problems to be Solved by the Invention] The conventional vapor deposition mask has the configuration shown in the aforementioned patent document, and can suppress relative deformation of the mask and the substrate due to the difference in thermal expansion coefficient, and prevent vapor deposition formation. The positional accuracy is significantly degraded. [0008] However, in the market, further high precision is required, and it is sought to further suppress the occurrence of the offset due to the displacement of the mask. However, in the case of the conventional combined structure of the mask main body and the casing, it is necessary to thin the casing for reinforcement. Therefore, there is a limit in the high strength under the thin casing in this mode, and it is impossible to It is ensured by the frame that the rigidity of the slight deformation due to the influence of the stress on the side of the mask body can be avoided. For this reason, in the conventional mask structure, it is difficult to cause the displacement of the mask main body to fall within an allowable range which is tightened with high precision, and there is a possibility that the yield due to the positional shift of the vapor deposition product cannot be avoided. To solve such a problem. [0009] The present invention has been made in order to solve the above problems, and an object of the present invention is to provide a method for installing a vapor deposition mask and a vapor deposition mask which is formed by a reinforcing frame portion of a frame body and is less likely to cause a holding frame portion. Deformation of the mask body, suppressing the offset of the mask body from the correct position, and improving the accuracy of the vapor deposition mask, the method of setting the vapor deposition mask can maintain the mask body of the vapor deposition mask The holding frame portion is appropriately fixed to the vapor deposition device side, and a state in which the mask main body is accurately positioned is obtained. [Technical means for solving the problem] [0010] The vapor deposition mask according to the disclosure of the present invention is a vapor deposition mask, and includes a mask main body in which a plurality of independent vapor deposition through holes are provided in a predetermined pattern, and is integrated with the mask main body. The frame body is provided with a holding frame portion that is coupled and integrated with the mask body, and a reinforcing frame portion that is integrally provided with the holding frame portion. According to the disclosure of the present invention, the holding frame portion for holding the mask main body in the casing is provided with a reinforcing frame portion that reinforces the reinforcing frame portion, thereby increasing the rigidity of the frame body that stresses the mask main body. The vapor deposition device can be fixedly disposed in a state in which the respective portions of the mask main body are offset from the position, and the integrated state of the mask and the vapor-deposited substrate can be ensured, and the vapor deposition can be accurately performed. The appropriate position of the vapor-deposited substrate. Further, in the vapor deposition mask according to the present invention, a separation processing portion is provided at a boundary portion between the holding frame portion and the reinforcing frame portion of the casing, and the separation processing portion is formed into a regular or irregular shape. Further, at least one of a plurality of through holes or recesses is arranged in a line shape, or a groove-like continuous arrangement is formed. According to the disclosure of the present invention, the processing portion for separation is provided at the boundary portion between the holding frame portion and the reinforcing frame portion of the casing, and the machining target position when the reinforcing frame portion is separated from the holding frame portion is created. When the frame holding frame portion and the mask body on the side of the vapor deposition device are positioned and fixed, and the rigidity of the frame that passes through the reinforcing frame portion is ensured, it is not necessary, and the holding frame portion of the reinforcing frame portion can be easily performed. The separation process can be smoothly transferred to the vapor deposition process by the vapor deposition device, and the reinforcement can be made without affecting the shape of the holding frame portion remaining as the frame and the reinforcing state of the mask main body that holds the frame portion. The frame portion is separated, and the subsequent vapor deposition process can be performed without any problem. Further, in the vapor deposition mask according to the disclosure of the present invention, the mask main body is integrated with the holding frame portion of the housing in a state in which the stress of the frame body is contracted inwardly. The frame body is assumed to have a predetermined amount of deformation of each part of the frame body in a state in which the force of the stress is applied to the frame body, and the separation processing unit is set to have a shape in which the frame body is separated. The larger the amount of the expected deformation of the position of the processed portion, the smaller the ratio of the size of the portion that is removed as the through hole, the recess, or the groove to the portion that is not removed. [0015] In the case of the present invention, the frame body is a predetermined amount of deformation of each part of the frame due to the force of the stress of the mask body, and the removal of the processed portion for the frame is removed. The portion is set such that the ratio of the removed portion to the residual portion that is not removed is reduced at a position where the amount of the expected deformation of the frame due to the stress of the mask main body becomes large, and the stress on the main body is caused by the stress of the mask body. When the amount of the expected deformation of the casing is reduced, the ratio of the removed portion to the remaining portion that is not removed is increased, and the processing portion for separation is adjusted for the possibility of deformation of each part of the frame. In the position of the portion where the large-sized frame is expected to be deformed due to the stress of the mask main body, the ratio of the removed portion of the recessed portion or the like in the separated processed portion is reduced, and the strength of the frame is sufficiently ensured. The position of the stress applied to the mask main body of the casing increases the ratio of the removed portion of the processing portion for separation, and improves the processing efficiency at the time of the reinforcing frame portion separation processing while ensuring the appropriate strength. The rapid separation of the reinforcing frame portion is performed to smoothly transfer to the vapor deposition process. Further, in the vapor deposition mask according to the present invention, the separation processing portion is a groove that is continuously arranged linearly at a boundary portion between the holding frame portion and the reinforcing frame portion, and is in the groove. The groove continuous direction is formed by a combination of a plurality of through holes that are formed at a predetermined interval, and the through holes are provided with slit portions having an acute angle at the end portions of the grooves in the continuous direction. [0017] In the disclosure of the present invention, the processing portion for separating the frame is a combination of a groove and a through hole, and the through hole is partially extended in the continuous direction of the groove to form an acute angled groove portion. When the cutting portion of the frame is separated and the reinforcing frame portion of the frame is separated, the cutting portion is easily formed along the cutting portion starting from the groove portion, so that it is not easy to keep the burr or the like on the frame portion side. It will adversely affect the operations accompanying the evaporation process. Further, in the method of installing a vapor deposition mask according to the present invention, a vapor deposition mask is provided at a predetermined position of the vapor deposition device, and the vapor deposition mask is set to be independent in a predetermined pattern. A plurality of mask main bodies each of which has a vapor deposition through hole, and a frame body having a holding frame portion and a reinforcing frame portion are disposed so as to surround the outer side of the mask main body, and the holding frame portion can be combined with the mask main body The outer peripheral edge is integrally connected, and the reinforcing frame portion is integrally disposed with the holding frame portion so as to continuously surround the outer side of the holding frame portion; and the frame member for supporting the vapor deposition mask of the vapor deposition device The holding frame portion of the frame of the vapor deposition mask is integrally fixed, and the reinforcing frame portion is separated and removed from the holding frame portion of the frame body fixed to the frame member. [0019] In the disclosure of the present invention, the reinforcing frame portion disposed on the outer side of the holding frame portion is connected to the strength of the reinforcing frame portion to form a frame body that is not easily deformed, and a vapor deposition mask of the plurality of mask bodies. The frame member of the apparatus fixes the frame portion of the frame to obtain a state of being supported by the vapor deposition device, so that the vapor deposition mask can be placed on the vapor deposition device while the frame body suppresses deformation of the mask body, thereby preventing the cover from being blocked. The displacement of the cover main body ensures the integration state of the mask and the vapor-deposited substrate, improves the precision of vapor deposition, and improves the yield of the vapor-deposited product. Further, after the fixing of the frame to the vapor deposition device, the reinforcing frame portion is separated from the holding frame portion, so that the reinforcing frame portion does not become a hindrance to the program after the fixed support of the vapor deposition mask, and the vapor deposition can be performed without any problem. Evaporation under the device. [0020] Further, in the method of installing a vapor deposition mask according to the disclosure of the present invention, the frame body has a rectangular shape, and includes a first program, a second program, a third program, a fourth program, and a In the fifth procedure, in the state in which the vapor deposition mask is completed, the measurement is performed in two directions parallel to the outer circumference of each of the rectangular frame at each position of the frame and the mask body. In the case where the inward displacement of the predetermined position does not fall within a predetermined allowable range, the outer periphery of the frame outside the position at which the maximum displacement occurs is outwardly parallel to the direction of the maximum displacement. The predetermined tensile force is applied as a force that falls within the allowable range as the displacement of the position, and the third program re-measures the aforementioned positions of the frame and the mask body in a state where the tensile force is applied. In the case of the displacement in both directions, in the case where the newly generated inward displacement does not fall within the above-mentioned allowable range after the measurement, the pair is newly generated most under the state in which the tensile force is applied. The outer peripheral portion of the outer frame of the outer side of the position of the large displacement is further applied with a predetermined outward tensile force parallel to the direction of the new maximum displacement as a force at which the displacement of the position falls within the allowable range. The fifth program is determined at any position on the inner side of the outer peripheral portion of the frame to which the tensile force has been applied, and the additional tensile force accompanying the addition is such that the outward displacement does not fall within a predetermined allowable range. In the case of the state in which the displacement of the position is within the allowable range, the adjuster that reduces the tensile force of the outer peripheral portion of the frame applied to the outer side of the position is repeated, and the third to fifth procedures are repeated. Until the measurement displacement at each position of the frame and the mask body falls within the allowable range, the displacement frame portion of the vapor deposition mask in the allowable range is placed, and the tensile force is added to the frame. The lower frame is fixed to the frame body, and after the fixing, the tension of the frame body is released. [0021] In the disclosure of the present invention, in order to repeat the procedure of applying a tensile force to the predetermined position of the casing which may be largely deformed by the stress of the mask main body, the displacement is allowed to fall within the allowable range. The holding frame portion of the frame body is fixed to the frame member in a state in which the displacement falls within the allowable range at any position of the frame body and the mask body, and the frame body and the mask body in which the displacement falls within the allowable range are maintained. After the evaporating mask is placed in the state of the evaporating device, the tensile force applied to the frame is released, so that the offset of the mask body accompanying the deformation of the frame in the evaporating mask can be shifted from the correct position. Under the precaution of the deformation of the frame by the external force, the frame is fixed to the frame member to ensure the proper setting of the vapor deposition mask to the vapor deposition device, and the vapor deposition-related precision can be ensured. Further improvement. Further, in the method of manufacturing a vapor deposition mask according to the present invention, the vapor deposition mask is formed by a plurality of metal mask bodies provided with a plurality of vapor deposition through holes, and surrounding the outer side of the mask body. The manufacturing method includes a first electroforming program, a housing arrangement program, a frame machining program, a second electroforming program, and a peeling program, and the first electroforming program is in the mother. Forming a plurality of plating layers corresponding to the mask body by electroforming of a plurality of predetermined positions on the mold, wherein the frame assembly process is performed by the first plating layer being located in a plurality of openings previously provided in the frame body In the case of positioning, the frame body is placed on the master mold, and the frame machining program is to provide the separation processing unit to the frame body, and the separation processing unit performs the predetermined removal of the frame body. Processing, forming an arrangement of at least one of a plurality of through holes or recesses in a regular or irregular manner and linearly arranging, or arranging the grooves continuously in a line shape, the second electroforming program is from the frame Part or all of the table A metal layer is formed by electroforming along a predetermined range of the peripheral surface of the outer plating layer, and the frame is integrally joined to the primary plating layer via the metal layer so as not to be separated, and the stripping process is performed from the master mold One-piece plating, frame and metal layer peeling. [0023] In the disclosure of the present invention, a primary plating layer serving as a mask main body is formed on the master mold, and the frame body is disposed so as to be positioned around the primary plating layer, further extending from the surface of the frame body to the primary plating. In the process of forming a metal layer for connecting the frame to the primary plating layer in a predetermined range of the outer peripheral surface of the layer, the processing unit for separation is provided by the predetermined removal processing of the frame body so that the mold can be removed from the master mold. In a state where the plating layer, the frame, and the metal layer are integrally peeled off to obtain a vapor deposition mask, a region in which the inner mask main body is integrally held by the separation processing portion is set in the housing, and the outer surface is provided. The region where the entire frame is reinforced, and the outer region is sufficiently larger than the processing portion for separation of the frame, and the rigidity of the frame body that is applied to the frame body by the stress of the mask body can be improved. The vapor deposition mask can be fixed to the vapor deposition device while suppressing the offset of the respective portions of the mask body from the position, thereby ensuring the integration state of the mask and the vapor-deposited substrate. The vapor deposition is performed at an appropriate position on the vapor-deposited substrate with high precision. In addition, after the fixing of the vapor deposition mask on the side of the vapor deposition device, the rigidity of the frame in the region outside the separation processing portion of the housing is ensured, and the separation is performed in the separation processing portion. The processing can be easily separated from the outer region of the frame, and can be smoothly transferred to the vapor deposition process which is passed through the vapor deposition device, and the shape of the inner region which is not left as the frame body, and the mask body according to the mask body The outer region is partially separated under the influence of the holding state, and the subsequent vapor deposition process can be performed without any problem.

[0025] (本發明的第1實施方式) 　　以下，基於圖1至圖12說明本發明的第1實施方式相關的蒸鍍遮罩。於本實施方式係說明有關適用於有機EL元件用蒸鍍遮罩之例。 　　[0026] 前述各圖中，本實施方式相關的蒸鍍遮罩1具有一構成，該構成係具備：依既定圖案設置多數個蒸鍍通孔8的複數個遮罩主體2、包圍遮罩主體2之外側而配置的框體3。 　　[0027] 前述遮罩主體2具有以下構成：以鎳、鎳鈷等的鎳合金、其他電鍍金屬為素材，透過電鑄形成為薄片狀，依既定圖案設置使蒸鍍物質通過的獨立的多數個蒸鍍通孔8。 　　[0028] 遮罩主體2包含：內部的設置多數個蒸鍍通孔8之圖案形成區域2a、經由透過電鑄而形成的金屬層7而與框體3接合為一體的外周緣2b。在圖案形成區域2a，多數個蒸鍍通孔8形成發光層形成用的蒸鍍圖案9。 　　[0029] 遮罩主體2的厚度優選上設定為10～100μm的範圍，在本實施方式係設定為20μm。各蒸鍍通孔8具有例如俯視下前後的長度尺寸為70μm、左右寬度尺寸為170～200μm的四角狀，此等蒸鍍通孔8構成矩陣狀的蒸鍍圖案9，該矩陣狀係以直線排列於前後方向的複數個通孔群為行，複數個行並列狀地配設於左右方向。 　　[0030] 前述框體3係將比遮罩主體2厚的矩形狀的薄板作成框狀者，具有以下構成：作為遮罩主體2的補強用而配置於遮罩主體2之外周，經由金屬層7與遮罩主體2連結一體化。詳言之，框體3具有：與遮罩主體2之外周緣連結一體化的保持框部4、以將此保持框部4之外側連續包圍的配置而配設為與保持框部4成為一體的補強框部5。 　　[0031] 此框體3係以低熱膨脹係數的材質如屬鎳-鐵合金的因瓦(invar)材、或屬鎳-鉄-鈷合金的超級因瓦材等的材質而形成。並且，框體3係利用透過電鑄而形成的金屬層7而連結一體化為不與遮罩主體2的圖案形成區域2a之外周緣2b彼此分離。 　　[0032] 框體3的材質方面採用因瓦材、超級因瓦材等的情況下，其熱脹係數極小，因而可良好地抑制在蒸鍍程序中的熱影響所致的遮罩主體2的尺寸變化。亦即，如遮罩主體2為例如鎳等的熱脹係數比作為被蒸鍍基板(圖式省略)的一般玻璃的熱脹係數大的情況，不會因蒸鍍時的高溫所致的熱膨脹率的差異而在常溫下使蒸鍍遮罩1整合於被蒸鍍基板之際的相對於基板的通孔位置與在實際的蒸鍍時的蒸鍍物質的蒸鍍位置之間產生偏移，由於保持遮罩主體2的框體3的熱脹係數小之特徵，使得可良好地抑制因在升溫時的遮罩主體2的膨脹而產生的尺寸變化、形狀變化，在蒸鍍時的升溫時亦良好地保持在常溫時的整合精度。 　　[0033] 另外，框體3的材質亦可採用如接近作為被蒸鍍基板的玻璃等的低熱膨脹係數的材料如玻璃、陶瓷等者。此情況下，變得可對於此等材料的至少表面賦予導電性。 　　[0034] 框體3如示於圖4，形成為具備與遮罩主體2對應的6個開口3a的薄板製的矩形框狀，以一個框體3保持6個遮罩主體2。亦即，框體3係在其板面上整列配置6個開口3a，於各開口3a配裝一個遮罩主體2。框體3之中，補強框部5的一寬幅之外周部分的寬度係例如設定為約60mm，其中保持框部4的寬度設定為約10mm，補強框部5的寬度設定為約50mm。此外，框體3的厚度尺寸係例如設定為0.1～5.0mm程度，於本實施方式係設定為1.0mm。 　　[0035] 在此框體3的保持框部4與補強框部5的邊界部分，設置分離用加工部3b，該分離用加工部3b具有將線狀連續的溝3c與複數個貫穿孔3d進行組合的形狀。分離用加工部3b的寬度例如設定為約2mm。 　　[0036] 此分離用加工部3b係設為溝3c與貫穿孔3d的組合形狀，該溝3c係在保持框部4與補強框部5的邊界部分被線狀地連續配置者，該貫穿孔3d係以在此溝3c內往溝連續方向形成既定間隔的配置而穿設複數個者。其中貫穿孔3d係在此貫穿孔的溝3c的連續的方向的端部設置銳角的切槽部3e。 　　[0037] 另外，切槽部3e的尖端(銳角的角部)位置，優選上設定為從分離用加工部3b的寬度方向之中心位置偏保持框部4或偏補強框部5挪移，更優選上偏遮罩主體2側的保持框部4挪移。 　　[0038] 分離用加工部3b係除了透過對於框體3的蝕刻而設置以外，亦可透過以機械加工、雷射加工等除去非必要部分而設。 　　另外，分離用加工部3b係不限於使貫穿孔3d為具有切槽部3e的剖面形狀者，亦可作成單純的四角形、圓形剖面等的貫穿孔。此外，分離用加工部3b係除了組合溝3c與貫穿孔3d的形狀以外，亦可採以線狀連續的配置而設置未以既定間隔同時設置貫穿孔的溝的構成。此外，分離用加工部3b係亦可作成以規則或不規則且複數線狀地排列的配置而設置貫穿孔或凹部中的至少一者的構成。 　　[0039] 向蒸鍍遮罩1的製程提供預先設置此分離用加工部3b的狀態的框體3，作為遮罩主體的一次電鍍層15的形成後，以位於此一次電鍍層15的周圍的方式配置於母模10上，此外亦可作成將未加工的框體3配置於母模10上，在其之後的製程的中途階段於框體3設置分離用加工部3b。 　　[0040] 前述蒸鍍遮罩1係透過以下方式而製造者：於母模10的表面，予以對應於一次電鍍層15的非配置部分而設置一次圖案抗蝕層14後，在母模10上透過電鍍金屬的電鑄而形成一次電鍍層15，以包圍此一次電鍍層15的方式配置框體3，進一步形成覆蓋一次電鍍層15的圖案形成區域2a對應部分的二次圖案抗蝕層18後，以覆蓋框體3的表面與一次電鍍層15之外周緣2b表面的方式透過電鑄形成金屬層7，經由此金屬層7將一次電鍍層15與框體3以不分離的方式連結為一體的狀態下，將此等一體的一次電鍍層15、框體3及金屬層7與母模10分離。 　　[0041] 在本實施方式相關的蒸鍍遮罩1的製程所使用的前述母模10以不鏽鋼材、黃銅、鋼等的具有導電性的材質而形成，係在蒸鍍遮罩的製程被分離前就構成遮罩主體2的一次電鍍層15進行支撐者，在蒸鍍遮罩製程的各階段，在表面側形成一次圖案抗蝕層14、一次電鍍層15、二次圖案抗蝕層18及金屬層7。在一次電鍍層15、金屬層7的形成之際，進行經由此母模10之通電，從而在未被母模10表面的抗蝕層覆蓋的可通電的部分透過電鑄形成一次電鍍層15或金屬層7。 　　[0042] 母模10例如亦可採用42合金(42%鎳-鐵合金)、因瓦(36%鎳-鐵合金)、SUS430等的低熱膨脹係數的素材。此外，母模亦可為在玻璃板、樹脂板等絕緣性基板的表面形成由鉻、鈦等的具有導電性的金屬所成的金屬膜者。 　　[0043] 在蒸鍍遮罩1的製程，在母模10上透過電鑄形成金屬層7時(圖9(B)參照)，母模10被從此等分離除去(圖9(C)參照)。母模10為不鏽鋼材的情況下，優選上採用施力而從蒸鍍遮罩側以物理方式剝離而除去的方法，此外母模10為其他金屬材的情況下，優選上採用利用藥液而溶解除去的蝕刻的方法。蝕刻的情況下，母模10雖溶解惟變成採用不會侵害構成一次電鍍層15、框體3、金屬層7的材質的具有選擇蝕刻性的蝕刻液。 　　[0044] 前述一次電鍍層15具有以下構成：由適於電鑄的鎳、鎳-鈷等的鎳合金所成，在母模10上的無一次圖案抗蝕層14的部分以電鑄而形成。於蒸鍍遮罩1，一次電鍍層15形成為構成遮罩主體2者，該遮罩主體係覆蓋在被蒸鍍基板的與發光層等的蒸鍍對象處對應的蒸鍍通孔8以外的被蒸鍍基板的表面者。 　　[0045] 前述一次圖案抗蝕層14，係以具備對於在一次電鍍層15的電鑄所使用的電解液的抗溶解性的絕緣性材而形成，予以對應於預先設定於母模10上的一次電鍍層15的非配置部分而配設，一次電鍍層15的形成後被除去(圖6、圖7參照)。 　　[0046] 此一次圖案抗蝕層14，係在一次電鍍層15的形成之前配設於母模10上，使感光性抗蝕層如負型的感光性乾膜抗蝕層於母模10成為既定的厚度如約20μm的厚度從而配設，在載置與蒸鍍遮罩1的遮罩主體2位置對應亦即與一次電鍍層15的配置位置對應的既定圖案的遮罩膜12的狀態下，經過由於利用紫外線照射下的曝光的硬化、將非照射部分的抗蝕層除去的顯影等的處理，以予以對應於一次電鍍層15的非配置部分的形狀而形成。 　　[0047] 前述二次圖案抗蝕層18以具備對於在金屬層7的電鑄所使用的電解液的抗溶解性的絕緣性材而形成，予以對應於預先設定的金屬層7的非配置部分而配設，係金屬層7的形成後被除去者(圖8、圖9參照)。 　　[0048] 此二次圖案抗蝕層18係在金屬層7的形成之前被配設，使感光性抗蝕層如負型的感光性乾膜抗蝕層，在母模10及已配置的一次電鍍層15上成為既定的厚度如約15μm的厚度從而配設，在載置與蒸鍍遮罩1的金屬層7及框體3位置對應的既定圖案的遮罩膜17的狀態下，經過由於利用紫外線照射下的曝光的硬化、將非照射部分的感光性材料除去的顯影等的處理，以予以對應於金屬層7的非配置部分(遮罩主體2的圖案形成區域2a)的形狀而形成。 　　[0049] 前述金屬層7係透過電鑄而形成者，具有以下構成：由鎳、鎳-鈷合金等而成，在母模10及已配置的一次電鍍層15及框體3上的未配設二次圖案抗蝕層18而曝露的部分，以電鑄而形成。 　　[0050] 此金屬層7係連結遮罩主體2與框體3者。金屬層7係透過電鑄而層積於涉及圖案形成區域之外周緣2b的遮罩主體2之上表面。詳細而言，金屬層7，係形成於在遮罩主體2的圖案形成區域2a之外周緣2b之上表面、框體3之上表面及圖案形成區域2a側之側面、遮罩主體2與框體3之間隙部分，藉此將圖案形成區域2a之外周緣2b與框體3的開口周緣一體地連結成不會分離。 　　[0051] 另外，金屬層7可形成於框體3的包含保持框部4與補強框部5雙方的表面(上表面)整體，惟由於之後的在分離用加工部3b的切斷，使得框體3的補強框部5被分離除去，故金屬層7亦可僅形成於保持框部4的表面。 　　[0052] 接著，就本實施方式相關的蒸鍍遮罩的製程及往蒸鍍裝置的設置程序進行說明。 　　關於蒸鍍遮罩的製程，首先予以對應於預先設定於母模10上的遮罩主體2的蒸鍍通孔8，亦即予以對應於一次電鍍層15的非配置部分，在母模10配設阻擋層11(圖6參照)。具體而言，在母模10的表面側，例如將負型的感光性乾膜抗蝕層，配合與形成的一次電鍍層15的高度對應的既定厚度(例如約20μm)層積一至積數個，透過熱壓接形成阻擋層11(圖6(A)參照)。 　　[0053] 然而，於阻擋層11的表面，將具有與前述蒸鍍通孔8對應的透光孔12a等與一次電鍍層15的配置位置對應的既定圖案的遮罩膜(玻璃遮罩)12予以密接後，進行由於利用紫外線照射下的曝光的硬化(圖6(B)、(C)參照)、將被遮罩的非照射部分的抗蝕層進行除去的顯影、乾燥等的各處理。藉此，將予以對應於一次電鍍層15的非配置部分的一次圖案抗蝕層14形成於母模10上(圖7(A)參照)。 　　[0054] 另外，如此的一次圖案抗蝕層14能以使用光阻等下的光刻法及其他任意的方法而形成，其形成方法未限定於上述。 　　[0055] 將具有此一次圖案抗蝕層14的母模10，放入建槽為既定的條件的電鑄槽，在一次圖案抗蝕層14的厚度的範圍內，在母模10的未以一次圖案抗蝕層14覆蓋的表面(曝露區域)，透過鎳合金等的電鍍金屬的電鑄，形成例如20μm厚的成為遮罩主體2的一次電鍍層15(圖7(B)參照)。 　　[0056] 之後，將一次圖案抗蝕層14進行溶解除去，從而獲得成為遮罩主體2的一次電鍍層15，而該遮罩主體2係設有形成既定的蒸鍍圖案9的獨立的多數個蒸鍍通孔8者(圖7(C)參照)。 　　[0057] 獲得一次電鍍層15後，在包含此一次電鍍層15的形成部分的母模10的表面整體，配設阻擋層16。具體而言，在母模10的表面側，例如將負型的感光性乾膜抗蝕層，配合預先設定的既定厚度(例如約15μm)而層積一至數個，透過熱壓接形成阻擋層16(圖8(A)參照)。 　　[0058] 然後，於阻擋層16的表面，如示於圖8(B)，將具有與遮罩主體2的圖案形成區域2a對應的透光孔17a的遮罩膜17予以密接後，進行透過利用紫外線照射下的曝光而予以硬化的處理(圖8(B)、(C)參照)。藉此，與圖案形成區域2a對應的部分成為被曝光的阻擋層16a，其以外的部分成為未曝光的阻擋層16b。 　　[0059] 於此，將預先設置分離用加工部3b的框體3，以包圍一次電鍍層15的方式進行位置對準而配置於母模10上(圖8(C)參照)。 　　此處的框體3係由於未曝光的阻擋層16b的黏著性，可於母模10上暫時固定為不會容易地移動。 　　[0060] 框體3配置後，進行將曝露於表面的未曝光的阻擋層16b溶解除去的處理，形成覆蓋圖案形成區域的二次圖案抗蝕層18(圖9(A)參照)。另外，存在於框體3的下側的未曝光的阻擋層16b，係未出現於表面而未被除去，殘於母模10上而持續扮演固定框體3的角色。 　　[0061] 之後，在不被二次圖案抗蝕層18覆蓋、曝露於涉及圖案形成區域2a之外周緣2b的表面的一次電鍍層15之上表面、在框體3與一次電鍍層15之間曝露於表面的母模10的表面、及框體3的表面上，透過電鍍金屬的電鑄而形成金屬層7(圖9(B)參照)。透過此金屬層7可將一次電鍍層15與框體3一體地連結為不會分離。 　　[0062] 此情況下，金屬層7以曝露於涉及圖案形成區域2a之外周緣2b的表面的一次電鍍層15之上表面、在一次電鍍層15與框體3之間曝露於表面的母模10表面的厚度成為30μm的方式而形成。另一方面，在框體3的表面的金屬層7的厚度為15μm。此厚度的差異係由於以下情形所致者：金屬層7被從母模10的表面依序積層，超過未曝光的阻擋層16b的高度尺寸而達到框體3後，框體3與母模10始成為導通狀態，開始往框體3的表面的金屬層7的形成。 　　[0063] 金屬層7的形成完畢後，作為最終程序，從母模10將一體的一次電鍍層15、框體3及金屬層7剝離(圖9(C)參照)。再者，將存在於二次圖案抗蝕層18及框體3的下側的未曝光的阻擋層16b除去，使得蒸鍍遮罩1的製造終告完畢。 　　[0064] 歷經前述各製程而獲得的蒸鍍遮罩1具有成為以下狀態的構成：產生該遮罩主體2相對於外側的框體3朝內側收縮的方向的應力F。 　　詳言之，對於母模10以熱脹係數大的材質透過電鑄形成一次電鍍層15，使得在進行電鑄的溫度比常溫高的環境下一次電鍍層15以超過母模的線膨脹狀態形成於母模表面，在母模10上係變形受到限制，使得在常溫的環境下不會發生試圖比母模10收縮得多之者的收縮，於一次電鍍層15產生朝內側收縮的方向的應力。 　　[0065] 另一方面，框體3被對於母模10在常溫環境下配設，框體本身亦以低熱膨脹係數的材質而形成，故在金屬層7的形成中將一次電鍍層15與框體3連結的狀態下，一次電鍍層15仍維持予以固有朝內側收縮的方向的應力。為此，將一體的一次電鍍層15與框體3從母模10分離時，一次電鍍層15亦即遮罩主體2會試圖相對於框體3朝內側收縮，變成對於框體3予以作用朝內的拉伸力。 　　[0066] 接著，就本實施方式相關的蒸鍍遮罩的往蒸鍍裝置的設置程序進行說明。 　　如上述般，在予以產生相對於框體3朝內側收縮的方向的應力的狀態下形成遮罩主體2，使得從遮罩主體2施加試圖使框體3變形之力。於此，框體3具有於保持框部4之外側一體配置補強框部5的構成，成為補強框部5對於就在框體3的內側的遮罩主體2進行保持的保持框部4從外側進行補強的構造。藉此，提高框體3對於因遮罩主體2的應力而試圖使框體3變形之力的剛性，受力的框體3不會大幅度變形。並且，框體3不易變形，使得成為遮罩主體2的變形亦不易發生的狀態。 　　[0067] 將作成如此的由遮罩主體2與框體3的組合所成的蒸鍍遮罩1，對於蒸鍍釜等的進行蒸鍍的蒸鍍裝置，可蒸鍍地進行設置。設置之際，首先將蒸鍍遮罩1，於蒸鍍裝置相對於作為蒸鍍遮罩支承用而設置的框件50適切地定位後進行固定(圖10、圖11參照)。框件50係例如由因瓦材等低熱膨脹係數的材質所成的框狀構材，使其厚度為10～25mm而形成。 　　此固定係在透過點焊等的焊接而強固地且在可耐蒸鍍時的熱的狀態下將蒸鍍遮罩1的框體3中的保持框部4一體化於框件50從而進行。 　　[0068] 另外，保持框部4的往框件50的透過焊接所為的固定，除了對於設於蒸鍍裝置內的框件50進行以外，在可將框件50從蒸鍍裝置卸除的情況下，亦可對作成容易取出至蒸發裝置外而處置的框件50進行。 　　[0069] 對於蒸鍍遮罩1的框體3，框件50剛性明顯高，將保持框部4固定於框件50的狀態下，保持框部4完全地一體化而不會相對於框件50偏移或變形，被連結於保持框部4內側而保持的遮罩主體2亦不會因應力而變形，可維持相對於框件50的位置關係。另外，框件50亦可為設置將框狀之中間部橫穿的桿體51者(圖13、圖14參照)。此情況下，將蒸鍍遮罩1固定於框件50的狀態下，可抑制蒸鍍遮罩1的自重所致的中央部分的變形。雖桿體51對於框件50可為縱、橫、斜中的任一方向，此外可予以組合為格子狀等而隨意設置，惟與遮罩主體2重疊時成為蒸鍍的障礙，故設置為與框體3重疊。此桿體51可自最初作成予以一體化於框件50的狀態而與框件50同時形成，亦可將與框件50獨立形成者在之後安裝於框件50而組合為一體。此外，桿體51係例如以因瓦材、陶瓷等的低熱膨脹係數的材質而形成，使厚度為5～8mm者，惟此桿體51的材質方面採用與框件50相同者與框件50不同者中任一者皆無妨。 　　[0070] 往框件50的保持框部固定後，以框體3本身的構造擔保框體3的保持框部4的剛性，亦即變得不需要仍然維持將保持框部4以其外側的補強框部5補強的構成。於蒸鍍的程序，蒸鍍遮罩1較小者情況較佳，故不需要因補強目的而留存，就成為非必要部分的補強框部5，在設於與保持框部4的邊界的分離用加工部3b進行切斷，從保持框部4分離除去(圖12參照)。 　　[0071] 此保持框部4的除去中，預先於框體3設置分離用加工部3b而作為將補強框部5從保持框部4分離之際的加工對象位置，使得不會勉強而容易進行分離加工，同時可在不會對於作為框體而留存的保持框部4的形狀、決取於保持框部4的遮罩主體2的保持狀態造成影響下將補強框部5分離，可平順地轉移至利用蒸鍍裝置下的蒸鍍程序。 　　[0072] 另外，作為加工對象的分離用加工部3b係作成線狀地連續配置的溝3c、和往溝3c的連續方向以既定間隔穿設複數個的貫穿孔3d的組合形狀，並成為於貫穿孔3d設置銳角的切槽部3e的構造。為此，將此分離用加工部3b切斷加工而將補強框部5分離之際，以切槽部3e為起點沿著分離用加工部3b輕易生成切剖面，不易在保持框部4側殘留毛邊等，可不會對於附隨蒸鍍程序的諸作業造成不良影響。 　　[0073] 如此般，本實施方式相關的蒸鍍遮罩係對於就在框體3的內側的遮罩主體2進行保持的保持框部4，配設從外側將其補強的補強框部5，提高對於基於遮罩主體2的應力從遮罩主體2施加於框體3之力的框體3的剛性，故在抑制遮罩主體2各部分的從本來應有位置的偏移的狀態下，固定設置於蒸鍍裝置，可確保遮罩與被蒸鍍基板的整合狀態，可精度佳地進行蒸鍍於被蒸鍍基板的適切的位置。 　　[0074] 此外，蒸鍍遮罩1的設置時，將蒸鍍遮罩1的框體3中的保持框部4，以焊接等固定於蒸鍍裝置的框件50而獲得往蒸鍍裝置的設置狀態，故可在維持以框體3抑制遮罩主體2的變形的狀態下將蒸鍍遮罩1設置於蒸鍍裝置，防止遮罩主體2的位移而使遮罩與被蒸鍍基板的整合狀態為確實者，提高蒸鍍的精度，使蒸鍍形成物的良率提升。此外，框體3的往蒸鍍裝置的固定後將補強框部5從保持框部4進行分離，使得補強框部5不會成為蒸鍍遮罩1的固定之後的程序的障礙，可無問題地進行利用蒸鍍裝置下的蒸鍍。 　　[0075] 另外，於前述實施方式相關的蒸鍍遮罩，使框體3的分離加工部3c為將線狀地連續的溝3c與以既定間隔於溝連續方向穿設複數個的貫穿孔3d進行組合的形狀，在保持框部4與補強框部5的邊界部分的任一位置皆作成以一樣的形狀而設置的構成，惟不限於此，亦可按框體3上的位置而改變分離加工部3c的形狀，例如亦能以與在予以殘存試圖相對於框體3朝內側收縮的應力的狀態下予以一體化的遮罩主體2對應之形式，使框體3為預先假定基於前述應力之力施加於框體的狀態而算出框體各部分的預想變形量者，將該分離用加工部3b構成為設定為如下的形狀者：在設置此分離用加工部3b的框體3的既定位置的預想變形量變越大，使構成此位置的分離用加工部3b的作為貫穿孔、凹部或溝而被除去的部分的大小的相對於不被除去的殘餘部分的比例越小。 　　[0076] 此情況下，使框體3的分離用加工部3b為依框體各部位的變形可能性而就除去部分進行增減調整下的形狀，亦即，作成將分離用加工部3b中的除去部分設定為，在基於遮罩主體2的應力而施加於框體3之力所致的框體3的變形量變大的位置，使除去部分相對於不被除去的殘餘部分之比例變小，另一方面在框體的變形量變小的位置，使除去部分相對於不被除去的殘餘部分的比例變大，使得在框體3的變形預期為大的位置，使分離用加工部3b的凹部等的除去部分的比例縮小而充分確保框體3的強度，另一方面在不易預想框體3的變形的位置，增加分離用加工部3b的除去部分的比例，一面確保適切的強度一面提高分離加工時的加工效率，可進行補強框部5的迅速的分離而平順地轉移至蒸鍍程序。 　　[0077] 具體例方面，如示於圖15，於框體3，在相較下剛性小、容易受到基於遮罩主體2的應力之力的影響、框體各邊之中沿著矩形狀的遮罩主體2的各邊之緣部中間位置附近的分離用加工部3b，將作為貫穿孔、凹部、或溝而被除去的部分盡可能減少，可增加不被除去的部分的比例，使因除去部分所致的剛性降低為最小限度，使實際的變形不易發生。另一方面，在剛性大、不易受到基於遮罩主體2的應力之力的影響、框體3的各框邊交會的角落部分附近的分離用加工部3b，增加相對於作為貫穿孔、凹部、或溝而被除去的部分的大小的不被除去的殘餘部分之比例，可減少分離加工時的工夫。 　　[0078] 此外，於前述實施方式相關的蒸鍍遮罩的製造，雖採取以接於一次電鍍層15與框體3的方式而形成金屬層7，以金屬層7謀取一次電鍍層15與框體3的一體化的構成，惟不限於此，亦可採取在框體配置前，將一次電鍍層15形成為及於框體配設位置，並將框體3對於下側的一次電鍍層15在使接著劑介於之間之下進行載置，將一次電鍍層15與框體3以黏合而一體化的構成，可簡略地執行一次電鍍層亦即遮罩主體與框體3的一體化，謀得遮罩的製造效率的提升。另外，以覆蓋遮罩主體2的表面與框體3的表面的方式形成金屬層7，使得可使遮罩主體2與框體3的接觸狀態成為較優選者。尤其，以金屬層7覆蓋接著劑的表面(側部)，使得可有效防止因洗淨處理、升溫而發生的接著劑的變質，可跨長期維持遮罩主體2與框體3的接觸狀態。 　　[0079] 此外，於前述實施方式相關的蒸鍍遮罩的製造，雖作成將框體3配置於母模10上後，將金屬層7形成於框體3表面，惟不限於此，亦可採取以下構成：在以電鑄形成金屬層7前，將抗蝕層配設於框體上表面的一部分或全部，不於框體上表面整體形成金屬層7，必要的部位以外僅於框體上表面的一部分設置金屬層7或省略，於框體3表面設置應力緩和部。 　　[0080] 此情況下，金屬層7在框體3之上表面不同樣地連續而成為局部、片斷者，使得即使假設於金屬層產生內部應力仍成為非框體3整體而局部、片斷地作用者，不易受到框體3變形等的不良影響，可確保平面形狀。 　　[0081] 此外，於前述實施方式相關的蒸鍍遮罩的製造，雖作成在形成一次電鍍層15後，於一次電鍍層不特別進行表面處理而形成金屬層7，惟不限於此，亦可在形成一次電鍍層15後，在形成阻擋層16前的階段，對於一次電鍍層15的重疊配設金屬層7的預定的既定範圍施行酸浸漬、電解處理等的活性化處理。 　　[0082] 此情況下，比起無處理的情況，謀得一次電鍍層15的活性化處理部分與其上的金屬層7之間的接觸強度的大幅的提升。此外，亦可代替活性化處理，對一次電鍍層15的既定範圍，形成底鍍(strike)鎳、無光澤鎳等的薄層。藉此亦可謀得一次電鍍層15的薄層形成部分與其上的金屬層7的接觸強度的提升。 　　[0083] 此外，於前述實施方式相關的蒸鍍遮罩的製造，一次電鍍層15、框體3與金屬層7重疊之處雖作成單純以平面彼此接觸的構成，惟除此之外亦可構成為在一次電鍍層15(遮罩主體2)的圖案形成區域2a之外周緣2b的整個全周設置多數個貫穿孔或凹部，就形成於一次電鍍層15之外周緣2b上的金屬層7，形成為埋住前述貫穿孔或凹部而金屬層7一部分陷入於外周緣2b的狀態。 　　[0084] 此情況下，金屬層7，係相對於一次電鍍層15，除圖案形成區域2a之外周緣2b之上表面以外，存在於外周緣2b的各貫穿孔或凹部內，使與一次電鍍層15之外周緣2b的接觸強度為更大者。藉此，可經由金屬層7將遮罩主體2與框體3更強固地連結一體化，可確實抑制相對於框體3之遮罩主體2的不慎的脫落、位置偏移，謀得蒸鍍精度及蒸鍍形成物的再現精度的提升。 　　[0085] (本發明的第2實施方式) 　　於前述第1實施方式中的蒸鍍遮罩的製造，係在將框體3配置於母模10上的程序，採用預先設定分離用加工部3b的框體3，而除此之外在第2實施方式方面，亦可如示於圖16，將框體3配置於母模10上後，作為遮罩製造的一程序，於框體3設置分離用加工部3b。 　　[0086] 此情況下，以除去加工設置分離用加工部3b的方法方面，可採用將配置於母模10上的框體3浸漬於蝕刻液而予以溶解的方法。此蝕刻的情況下，使用具有如框體3雖溶解惟不會侵犯母模10等框體以外的部位的材質的選擇蝕刻性的蝕刻液，或對於成為除去加工對象的框體既定範圍以外的部位，配設遮蔽材19(圖16(B)參照)。 　　[0087] 具體而言，以遮覆不成為蝕刻的對象的部位的方式，例如透過熱壓接等配設感光性膜抗蝕層，對於此抗蝕層，進行往除去部分的遮罩配置、由於利用紫外線照射下的曝光的硬化、顯影等的處理，硬化形成遮蔽材19。此外，遮蔽材方面，亦可作成將具有對於蝕刻液的抗性的保護膜以遮覆不作為蝕刻的對象的部位的方式而配設。 　　[0088] 形成遮蔽材19後，將框體3與母模10一起浸漬於蝕刻液，將未被遮蔽材19遮覆的框體3表面側的一部分曝露的部分以蝕刻溶解、除去至既定深度(圖16(C)參照)。以此蝕刻除去框體3的一部分的部位成為比框體3的其他部分薄、容易切斷的分離用加工部3b。 　　[0089] 經過蝕刻，獲得期望的深度及形狀的分離用加工部3b後，將遮蔽材19以既定的除去劑予以溶解而分別除去時，框體3、一次電鍍層15曝露而成為能以電鑄形成金屬層的狀態，此後如同前述第1實施方式，進行以電鑄形成金屬層的程序之後者。 　　[0090] 另外，除透過蝕刻於框體3設置分離用加工部3b以外，亦可作成對配置於母模10上的框體3，以機械加工、雷射加工進行非必要部分的除去加工，設置分離用加工部3b。 　　[0091] 如此般，本實施方式相關的蒸鍍遮罩的製造方法，係於母模10上形成成為遮罩主體的一次電鍍層15，以位於此一次電鍍層15的周圍的方式配置框體3，再者在從框體3表面跨至一次電鍍層15之外周緣2b表面的既定範圍，形成供於將此等框體3與一次電鍍層15連結用的金屬層7的過程之中，對於框體3透過既定的除去加工設置分離用加工部3b，使得可在從母模10一體地剝離的一次電鍍層15、框體3及金屬層7形成蒸鍍遮罩1的狀態下，於框體3，以分離用加工部3b為邊界，予以生成將遮罩主體2一體地保持的內側的區域(保持框部4)、在將框體整體進行補強之下在非必要時可分離的外側的區域(補強框部5)，使比框體3的分離用加工部3b靠外側的補強框部5為充分大，提高對於遮罩主體2的應力的框體3的剛性，可在抑制遮罩主體各部分的從本來應在位置的偏移的狀態下，將蒸鍍遮罩1固定設置於蒸鍍裝置，確保遮罩與被蒸鍍基板的整合狀態，可精度佳地進行蒸鍍於被蒸鍍基板的適切的位置。 　　[0092] 此外，往蒸鍍裝置側的蒸鍍遮罩1的固定設置後，透過比框體3的分離用加工部3b靠外側的補強框部5的框體3的剛性確保成為非必要的情況下，在分離用加工部3b進行分離加工使得可輕易使補強框部5分離，可平順地轉移至透過蒸鍍裝置所為的蒸鍍程序，並可在不對在框體3方面殘留的保持框部5的形狀、據此的遮罩主體2的保持狀態造成影響下將補強框部5分離，可無問題地進行之後的蒸鍍程序。 　　[0093] (本發明的第3實施方式) 　　前述第1實施方式中的蒸鍍遮罩1的往蒸鍍裝置的設置方面，蒸鍍遮罩的製造完畢後，將蒸鍍遮罩1直接固定於蒸鍍裝置的框件50，於蒸鍍裝置設置蒸鍍遮罩，而除此之外在第3實施方式方面，亦可如示於圖17至圖24，對在蒸鍍遮罩1的框體3之外周各部分附加拉伸力，使框體3及遮罩主體2的位移落入容許範圍後設置於蒸鍍裝置。 　　[0094] 於設置於蒸鍍裝置前的製造完畢狀態的蒸鍍遮罩1，如同前述第1實施方式，在予以產生相對於框體3朝內側收縮的方向的應力的狀態下形成遮罩主體2，使得從遮罩主體2施加試圖使框體3變形之力。於此，框體3具有於保持框部4之外側一體配置補強框部5的構成，成為補強框部5從外側對於就在框體3的內側的遮罩主體2進行保持的保持框部4進行補強的構造。藉此，提高框體3對於因遮罩主體2的應力而試圖使框體3變形之力的剛性，受力的框體3不會大幅度變形。並且，框體3不易變形，使得成為遮罩主體2的變形亦不易發生的狀態。 　　[0095] 然而，框體3亦由於作為蒸鍍遮罩1的一部分而形成為薄的必要性因而無法過厚之下，往框件50的固定時的處置的關係方面，補強框部5的大小亦存在一定的限制，故框體3的剛性強化具有限度，無法完全抑制框體3的變形。 　　[0096] 為此，從遮罩主體2施加的力大時，框體3的一部分朝內側稍微變形，成為容許與框體3一體的遮罩主體2收縮之變形的狀態，結果而言有時無法抑制遮罩主體2的些微的變形。此時，蒸鍍形成物的尺寸精度條件嚴，遮罩主體2的位置偏移方面的容許範圍小的情況下，在遮罩主體2的既定位置產生超過容許範圍的位移，恐造成蒸鍍形成物的良率不良化。 　　[0097] 對此，蒸鍍遮罩1的往蒸鍍裝置的設置方面，採用如下的程序：將與意欲基於遮罩主體2的應力而使框體3變形的力對抗之力施加於框體3，使框體3的位移落入容許範圍，在維持此框體3的位移落入容許範圍的狀態之下，將框體3的保持框部4固定於框件50。藉此，抑制框體3的變形，同時抑制如伴隨框體3的變形的遮罩主體2的從正確位置的偏移。 　　[0098] 具體的設置的程序係如下的順序：首先重複進行使位移落入容許範圍的如以下的一連串的程序直到成為位移在框體3及遮罩主體2的任一位置皆落入容許範圍的狀態：就從構成蒸鍍遮罩1的框體3及遮罩主體2的本來的狀態的位移進行測定，對於成為產生大的位移的位置之外側的框體3之外周既定位置，從外部施加拉伸力。並且，維持位移因拉伸力附加而落入容許範圍的框體3及遮罩主體2的狀態，將框體3的保持框部4固定於框件50。之後解放施加於框體3的拉伸力。另外，在框體外周的施加拉伸力的位置方面，使成為框體內側的格子狀部分之外側(延長線上)的框體外周位置以外的位置作為對象。此原因在於：框體外周部之中位於框體內側的格子狀部分之外側之處，剛性因與格子狀部分的結合而為高，基於遮罩主體的應力下的變形本不易發生，假設在發生變形的情況下即使從外部施加拉伸力，仍不易產生如抵消變形的逆向的變形。 　　[0099] 詳言之，第一程序方面，就在蒸鍍遮罩1的框體3與遮罩主體2的各位置上的與矩形狀的框體外周各邊平行的兩方向的位移進行測定。然後，第二程序方面，既定位置的朝內的位移不會落入預先設定的容許範圍的情況下，對位於產生最大的位移之處的外側的框體3之外周部，將與最大位移的方向平行的向外的既定的拉伸力，作為如前述位置的位移落入前述容許範圍的大小的力而施加。 　　[0100] 接著，第三程序方面，在施加拉伸力的狀態下再就框體及遮罩主體各位置的前述兩方向的位移進行測定。此測定後，第四程序方面，新產生向內的位移不落入前述容許範圍的位置的情況下，在維持施加拉伸力的狀態之下，對位於新產生最大的位移的位置之外側的框體外周部，將與新的最大位移的方向平行的向外的既定的拉伸力，作為如前述位置的位移落入前述容許範圍的大小的力而進一步施加。 　　[0101] 此外，第五程序方面，在已施加拉伸力的框體外周部的內側的任一位置，測定出伴隨之後的其他拉伸力附加將使得向外的位移不落入預先設定的容許範圍的狀態的情況下，為了使前述位置的位移落入容許範圍，進行將施加於前述位置之外側的框體外周部的拉伸力減小的調整。 　　[0102] 然後，重複進行前述第三至第五各程序直到以在框體3及遮罩主體2各位置的測定位移落入容許範圍。 　　[0103] 利用具體例進行說明時，於製造完畢後的蒸鍍遮罩，在遮罩主體2的位置A最大位移方面於框體3的縱向(y軸方向)透過測定而確認-6.1μm的位移，亦即朝框體內方6.1μm的位移(圖17參照)。此位移未落入容許範圍(±1μm以內)，故對位於產生最大位移的位置A的y軸方向之外側的框體3之外周部(上邊中央與下邊中央)，往在與最大位移的方向平行的y軸方向成為框體之外側的各方向施加40N的拉伸力(圖18參照)。 　　[0104] 然而，在附加此40N的拉伸力的階段進行框體及遮罩主體各位置的位移的測定時，依然在遮罩主體2的位置A在最大位移方面於框體3的y軸方向確認-3.0μm的位移(圖18參照)。此位移未落入容許範圍，故如同前述同様般對位於位置A的y軸方向之外側的框體3之外周部(上邊中央與下邊中央)的共兩處，往在y軸方向成為框體之外側的各方向，作為如位置A的位移落入容許範圍的大小的力，施加80N的拉伸力(圖19參照)。 　　[0105] 於此y軸方向附加80N的拉伸力後，進行框體各位置的位移的測定時，在遮罩主體2的位置B在最大位移方面於框體3的橫向(x軸方向)透過測定而新確認-2.4μm的位移，亦即於框體內方確認2.4μm的位移(圖19參照)。此位移未落入容許範圍，故在維持亦保持附加先前的y軸方向的拉伸力(80N)的狀態下，對位於產生最大位移的位置B的x軸方向之外側的框體3之外周部(左邊中央附近的兩處與右邊中央附近的兩處)的共四處，往在與最大位移的方向平行的x軸方向成為框體之外側的各方向，作為如位置B的位移落入容許範圍的大小的力，分別施加40N的拉伸力(圖20參照)。 　　[0106] 於此x軸方向附加40N的拉伸力後，進行框體及遮罩主體各位置的位移的測定時，在遮罩主體2的位置C在最大位移方面於框體3的y軸方向新確認-1.5μm的位移，亦即於框體內方確認1.5μm的位移(圖20參照)。此位移未落入容許範圍，故在維持亦保持施加先前的y軸方向的拉伸力(80N)、x軸方向的拉伸力(40N)的狀態下，對位於產生最大位移的位置C的y軸方向之外側的框體3之外周部(從上邊中央稍分離的兩處與從下邊中央稍分離的兩處)的共四處，往在與最大位移的方向平行的y軸方向成為框體之外側的各方向，作為如位置C的位移落入容許範圍的大小的力，分別施加20N的拉伸力(圖21參照)。 　　[0107] 於此y軸方向附加20N的拉伸力後，進行框體及遮罩主體各位置的位移的測定時，在遮罩主體2的位置D在最大位移方面於框體3的y軸方向新確認+1.1μm的位移，亦即於框體外方確認1.1μm的位移(圖21參照)。此位移未落入容許範圍，故在維持保持附加先前的x軸方向的拉伸力(40N)的狀態下，對位於產生最大位移的位置D的y軸方向之外側的框體3之外周部(上邊中央與下邊中央)的兩處，將先前往在y軸方向成為框體之外側的各方向施加的拉伸力(80N)減小至60N，並在框體3之外周部(從上邊中央稍分離的兩處與從下邊中央稍分離的兩處)的共四處，將先前往在y軸方向成為框體之外側的各方向分別施加的拉伸力(20N)增加至30N(圖22參照)，使位置D的位移落入容許範圍。 　　[0108] 如此就附加於y軸方向的拉伸力進行增減調整後，進行框體及遮罩主體各位置的位移的測定時，在遮罩主體2的位置E在最大位移方面於框體3的x軸方向新確認-1.1μm的位移，亦即於框體內方確認1.1μm的位移(圖22參照)。此位移未落入容許範圍，故在維持亦保持施加先前的y軸方向的拉伸力(60N、30N)、x軸方向的拉伸力(40N)的狀態下，對位於產生最大位移的位置E的x軸方向之外側的框體3之外周部(從左邊中央稍分離的兩處與從右邊中央稍分離的兩處)的共四處，往在與最大位移的方向平行的x軸方向成為框體之外側的各方向，分別施加20N的拉伸力(圖23參照)。 　　[0109] 於此x軸方向附加20N的拉伸力後，進行框體及遮罩主體各位置的位移的測定時，在遮罩主體2的位置F在最大位移方面於框體3的y軸方向新確認-1.2μm的位移，亦即於框體內方確認1.2μm的位移(圖23參照)。此位移未落入容許範圍，故在維持保持施加先前的y軸方向的拉伸力(80N)、x軸方向的拉伸力(40N、20N)的狀態下，對位於產生最大位移的位置F的y軸方向之外側的框體3之外周部(從上邊中央稍分離的兩處與從下邊中央稍分離的兩處)的共四處，將先前往在y軸方向成為框體之外側的各方向分別施加的拉伸力(30N)減小至20N(圖24參照)，使位置F的位移落入容許範圍。 　　[0110] 如此就附加於y軸方向的拉伸力進行調整後，進行框體及遮罩主體各位置的位移的測定時，框體3及遮罩主體2的最大位移方面在位置G於x軸方向確認-0.8μm的位移，亦即確認往框體內方的0.8μm的位移(圖24參照)。此位移落入容許範圍，故結束測定與拉伸力的附加、調整的程序的重複。 　　[0111] 如此之前述各程序的重複使得位移落入容許範圍時，將蒸鍍遮罩1的框體3中的保持框部4，保持對框體3附加拉伸力下，固定於予以位於蒸鍍裝置內或蒸鍍裝置之外的框件50。將保持框部4固定於框件50，獲得遮罩主體2被與框體3一起在無偏移下保持於合理的位置的狀態後，解除對框體3的拉伸力的附加，並如同前述第1實施方式，將框體3的補強框部5，在設於與保持框部4的邊界的分離用加工部3b進行切斷，從保持框部4分離除去。框件50在蒸鍍裝置內的情況下在此狀態下蒸鍍遮罩1的設置程序告終，此外框件50在蒸鍍裝置之外的情況下將框件50及蒸鍍遮罩1固定於蒸鍍裝置內時，蒸鍍遮罩1的設置程序告終。 　　[0112] 如此般，本實施方式相關的蒸鍍遮罩之設置方法，係將對可能因在蒸鍍遮罩1的遮罩主體2的應力而產生大的應力的框體3的既定位置，從外部施加拉伸力，使位移落入容許範圍的程序重複直到成為位移在框體3的任一位置皆落入容許範圍的狀態，保持位移落入容許範圍的框體3的狀態而將框體3的保持框部4固定於框件50，作成將蒸發遮罩1設置於蒸發裝置的狀態後，解放施加於框體3的拉伸力，從而就在蒸發遮罩1的伴隨框體3的變形的遮罩主體2的從正確位置的偏移，以透過外力的附加而按框體3抑制變形的手法確實進行防範之下，將框部3固定於框件50，可確保蒸鍍遮罩1的往蒸鍍裝置的適切的設置狀態，可使蒸鍍相關的精度進一步提升。[First Embodiment of the Present Invention] Hereinafter, a vapor deposition mask according to a first embodiment of the present invention will be described with reference to Figs. 1 to 12 . In the present embodiment, an example of a vapor deposition mask applied to an organic EL element will be described. In each of the above figures, the vapor deposition mask 1 according to the present embodiment has a configuration including a plurality of mask bodies 2 in which a plurality of vapor deposition through holes 8 are provided in a predetermined pattern, and a mask body. The frame 3 disposed on the outer side of the second side. [0027] The mask main body 2 has a configuration in which a nickel alloy such as nickel or nickel-cobalt or another electroplated metal is used as a material, and is formed into a sheet shape by electroforming, and an independent plurality of vapor deposition materials are provided in a predetermined pattern. The through hole 8 is evaporated. [0028] The mask main body 2 includes an outer peripheral edge 2b integrally formed with a pattern forming region 2a in which a plurality of vapor-deposited through holes 8 are provided, and a metal layer 7 formed by electroforming. In the pattern forming region 2a, a plurality of vapor-deposited via holes 8 form a vapor deposition pattern 9 for forming a light-emitting layer. The thickness of the mask body 2 is preferably set to a range of 10 to 100 μm, and is set to 20 μm in the present embodiment. Each of the vapor-deposited through holes 8 has, for example, a square shape having a length of 70 μm in the front and rear and a width of 170 to 200 μm in the left and right. The vapor-deposited through holes 8 constitute a matrix-shaped vapor deposition pattern 9 in a straight line. A plurality of through-hole groups arranged in the front-rear direction are rows, and a plurality of rows are arranged side by side in the left-right direction. [0030] The frame 3 is formed into a frame shape by a rectangular thin plate having a thickness larger than that of the mask main body 2, and has a configuration in which the cover main body 2 is placed on the outer periphery of the mask main body 2 via the metal layer. 7 is integrated with the mask body 2. In detail, the housing 3 has a holding frame portion 4 that is integrally coupled to the outer periphery of the mask main body 2, and is disposed integrally with the outer side of the holding frame portion 4, and is integrated with the holding frame portion 4. Reinforced frame part 5. [0031] The frame 3 is formed of a material having a low coefficient of thermal expansion such as an invar material of a nickel-iron alloy or a super invar material of a nickel-niobium-cobalt alloy. Further, the casing 3 is connected and integrated by the metal layer 7 formed by electroforming so as not to be separated from the outer peripheral edge 2b of the mask forming region 2a. [0032] When the material of the frame 3 is made of Invar or Super Invar, the coefficient of thermal expansion is extremely small, so that the mask body 2 due to the thermal influence in the vapor deposition process can be satisfactorily suppressed. Size changes. In other words, if the thermal expansion coefficient of the mask main body 2 is, for example, nickel or the like, which is larger than the thermal expansion coefficient of the general glass to be vapor-deposited (not shown), thermal expansion due to high temperature during vapor deposition is not caused. The difference in rate causes the vapor deposition mask 1 to be integrated with the vapor-deposited substrate at the normal temperature, and the position of the through-hole relative to the substrate is shifted from the vapor deposition position of the vapor-deposited material during the actual vapor deposition. Since the thermal expansion coefficient of the casing 3 of the mask main body 2 is kept small, dimensional changes and shape changes due to expansion of the mask main body 2 at the time of temperature rise can be satisfactorily suppressed, and temperature rise during vapor deposition The integration accuracy at normal temperature is also well maintained. Further, the material of the frame 3 may be a material such as glass or ceramic which is close to a low thermal expansion coefficient such as glass which is a vapor-deposited substrate. In this case, it becomes possible to impart conductivity to at least the surface of these materials. As shown in FIG. 4, the casing 3 is formed in a rectangular frame shape having a thin plate 3 opening 3a corresponding to the mask main body 2, and the six mask main bodies 2 are held by one frame 3. That is, the frame 3 has six openings 3a arranged in a row on the plate surface, and one mask body 2 is fitted to each of the openings 3a. In the casing 3, the width of one wide outer peripheral portion of the reinforcing frame portion 5 is set to, for example, about 60 mm, wherein the width of the holding frame portion 4 is set to about 10 mm, and the width of the reinforcing frame portion 5 is set to be about 50 mm. In addition, the thickness dimension of the frame 3 is set to, for example, 0. 1 to 5. The degree of 0 mm is set to 1. 0mm.  [0035] In the boundary portion between the holding frame portion 4 and the reinforcing frame portion 5 of the frame body 3, Providing the separation processing unit 3b, The separation processing portion 3b has a shape in which a linear continuous groove 3c and a plurality of through holes 3d are combined. The width of the separation processing portion 3b is set, for example, to about 2 mm.  [0036] The separation processing portion 3b is a combination of the groove 3c and the through hole 3d. The groove 3c is continuously arranged linearly at a boundary portion between the holding frame portion 4 and the reinforcing frame portion 5, The through hole 3d is provided in a plurality of places in the groove 3c so as to form a predetermined interval in the continuous direction of the groove. The through hole 3d is provided with an acute-angled groove portion 3e at the end portion of the groove 3c in the continuous direction of the through hole.  [0037] In addition, The tip end (the corner of the acute angle) of the groove portion 3e, Preferably, it is set to be shifted from the center position in the width direction of the separation processing portion 3b by the holding frame portion 4 or the offset reinforcing frame portion 5, More preferably, the holding frame portion 4 on the upper side of the mask main body 2 is moved.  [0038] The separation processing portion 3b is provided in addition to the etching of the casing 3, Can also be machined, Laser processing or the like is provided to remove unnecessary portions.  In addition, The processing portion for separation 3b is not limited to the shape in which the through hole 3d has a cross-sectional shape having the groove portion 3e. Can also be made into a simple quadrangular shape, A through hole such as a circular section. In addition, The separation processing portion 3b is other than the shape of the combination groove 3c and the through hole 3d. It is also possible to adopt a configuration in which a groove which is not provided with a through hole at a predetermined interval is provided in a line-like continuous arrangement. In addition, The separation processing portion 3b may be configured to provide at least one of a through hole or a concave portion in a regular or irregular arrangement in a plurality of lines.  [0039] Providing the frame 3 of the state in which the separation processing portion 3b is provided in advance to the process of vapor-depositing the mask 1, After the formation of the primary plating layer 15 as the mask body, Arranged on the mother mold 10 so as to be located around the primary plating layer 15, In addition, the unprocessed frame 3 may be disposed on the master mold 10, In the middle of the subsequent process, the separation processing portion 3b is provided in the casing 3.  [0040] The vapor deposition mask 1 is manufactured by: On the surface of the master 10, After the pattern resist layer 14 is provided once corresponding to the non-arranged portion of the primary plating layer 15, Forming a plating layer 15 on the master mold 10 by electroforming of a plating metal, The frame body 3 is disposed to surround the primary plating layer 15, After further forming the secondary pattern resist layer 18 covering the corresponding portion of the pattern forming region 2a of the primary plating layer 15, The metal layer 7 is formed by electroforming in such a manner as to cover the surface of the frame 3 and the surface of the outer periphery 2b of the primary plating layer 15, In a state in which the primary plating layer 15 and the frame body 3 are integrally connected to each other without being separated by the metal layer 7, One such integrated plating layer 15, The frame 3 and the metal layer 7 are separated from the master 10.  [0041] The aforementioned master mold 10 used in the process of the vapor deposition mask 1 according to the present embodiment is made of stainless steel, brass, It is formed of a conductive material such as steel. Supporting the primary plating layer 15 of the mask body 2 before the process of vapor deposition mask is separated, During each stage of the evaporation mask process, Forming a pattern resist layer 14 on the surface side, One plating layer 15, The secondary pattern resist layer 18 and the metal layer 7 are provided. In one plating layer 15, When the metal layer 7 is formed, Conducting power through the master 10, Thereby, the electroplated portion 15 or the metal layer 7 is formed by electroforming at a portion which is not covered by the resist layer on the surface of the mother mold 10.  [0042] The master mold 10 can also be, for example, a 42 alloy (42% nickel-iron alloy), Inwa (36% nickel-iron alloy), Material of low thermal expansion coefficient such as SUS430. In addition, The master can also be on a glass plate, The surface of the insulating substrate such as a resin plate is formed of chromium, A metal film made of a conductive metal such as titanium.  [0043] In the process of vaporizing the mask 1, When the metal layer 7 is formed by electroforming on the master mold 10 (refer to FIG. 9(B)), The master 10 is separated and removed therefrom (see Fig. 9(C) for reference). In the case where the master mold 10 is made of stainless steel, Preferably, the method of physically removing and removing from the vapor deposition mask side by applying force is used. In addition, in the case where the master mold 10 is other metal materials, Preferably, a method of etching which is dissolved and removed by a chemical solution is used. In the case of etching, The master mold 10 dissolves, but it does not invade to form a plating layer 15, Frame 3, The material of the metal layer 7 has an etching liquid having selective etching properties.  [0044] The aforementioned primary plating layer 15 has the following constitution: Made of nickel suitable for electroforming, Made of a nickel alloy such as nickel-cobalt, A portion of the master pattern 10 having no pattern resist layer 14 is formed by electroforming. In the evaporation mask 1, The primary plating layer 15 is formed to constitute the mask body 2, The mask main system covers the surface of the vapor-deposited substrate other than the vapor deposition via 8 corresponding to the vapor deposition target of the light-emitting layer or the like on the vapor-deposited substrate.  [0045] the aforementioned primary pattern resist layer 14, It is formed of an insulating material having solubility resistance to an electrolytic solution used for electroforming of the primary plating layer 15 . It is disposed corresponding to a non-arranged portion of the primary plating layer 15 previously set on the master mold 10, The plating layer 15 is removed after formation (Fig. 6, Figure 7 refers to).  [0046] This time the pattern resist layer 14, It is disposed on the master mold 10 before the formation of the primary plating layer 15, The photosensitive resist layer such as a negative photosensitive dry film resist layer is disposed in a predetermined thickness of the master mold 10 to have a thickness of, for example, about 20 μm. In a state in which the position of the mask main body 2 of the vapor deposition mask 1 is placed, that is, in a state of the mask film 12 of a predetermined pattern corresponding to the arrangement position of the primary plating layer 15, After hardening due to exposure by ultraviolet light, Processing such as development for removing the resist layer of the non-irradiated portion, It is formed in a shape corresponding to the non-arranged portion of the primary plating layer 15.  [0047] The secondary pattern resist layer 18 is formed of an insulating material having resistance to dissolution of an electrolytic solution used for electroforming of the metal layer 7, Provided corresponding to a non-arranged portion of the predetermined metal layer 7, After the formation of the metal layer 7 is removed (Fig. 8, Figure 9 refers to).  [0048] This secondary pattern resist layer 18 is disposed before the formation of the metal layer 7, Making the photosensitive resist layer such as a negative photosensitive dry film resist layer, Provided on the master mold 10 and the disposed primary plating layer 15 to have a predetermined thickness, for example, a thickness of about 15 μm. In a state in which the mask film 17 of a predetermined pattern corresponding to the position of the metal layer 7 and the frame 3 of the vapor deposition mask 1 is placed, After hardening due to exposure by ultraviolet light, a treatment such as development for removing a photosensitive material that is not irradiated, It is formed in a shape corresponding to the non-arranged portion of the metal layer 7 (the pattern forming region 2a of the mask body 2).  [0049] The metal layer 7 is formed by electroforming, Has the following composition: Made of nickel, Made of nickel-cobalt alloy, etc. a portion of the master mold 10 and the disposed primary plating layer 15 and the frame 3 that are not provided with the secondary pattern resist layer 18, It is formed by electroforming.  [0050] The metal layer 7 is used to connect the mask body 2 and the frame body 3. The metal layer 7 is laminated by electroforming to the upper surface of the mask body 2 which is adjacent to the periphery 2b of the pattern forming region. In detail, Metal layer 7, Formed on the outer surface of the peripheral edge 2b outside the pattern forming region 2a of the mask body 2, The upper surface of the frame 3 and the side of the pattern forming region 2a side, a gap portion between the mask body 2 and the frame body 3, Thereby, the outer peripheral edge 2b of the pattern forming region 2a is integrally connected to the peripheral edge of the opening of the casing 3 so as not to be separated.  [0051] In addition, The metal layer 7 can be formed on the entire surface (upper surface) of the housing 3 including the holding frame portion 4 and the reinforcing frame portion 5, However, it is cut off in the processing part 3b for separation, The reinforcing frame portion 5 of the frame 3 is separated and removed. Therefore, the metal layer 7 may be formed only on the surface of the holding frame portion 4.  [0052] Next, The process of the vapor deposition mask according to the present embodiment and the setting procedure of the vapor deposition device will be described.  Regarding the process of vapor deposition mask, First, the vapor-deposited through hole 8 corresponding to the mask main body 2 previously set on the master 10 is applied. That is, corresponding to the non-configured portion of the primary plating layer 15, A barrier layer 11 is disposed in the master mold 10 (refer to FIG. 6). in particular, On the surface side of the master 10, For example, a negative photosensitive dry film resist layer, A predetermined thickness (for example, about 20 μm) corresponding to the height of the formed primary plating layer 15 is laminated from one to several, The barrier layer 11 is formed by thermocompression bonding (refer to Fig. 6(A)).  [0053] However, On the surface of the barrier layer 11, After the mask film (glass mask) 12 having a predetermined pattern corresponding to the arrangement position of the primary plating layer 15 such as the light-transmitting hole 12a corresponding to the vapor-deposited through hole 8 is adhered, Performing hardening due to exposure by ultraviolet light (Fig. 6(B), (C) Reference), Development of removing the resist layer of the masked non-irradiated portion, Each treatment such as drying. With this, The primary pattern resist layer 14 corresponding to the non-arranged portion of the primary plating layer 15 is formed on the master mold 10 (refer to Fig. 7(A)).  [0054] In addition, Such a primary pattern resist layer 14 can be formed by photolithography using a photoresist or the like, and any other method. The method of forming the same is not limited to the above.  [0055] The master 10 having the primary pattern resist layer 14 is Put into an electroforming tank where the groove is set to a predetermined condition, Within the range of the thickness of the primary pattern resist layer 14, In the surface (exposed area) of the master 10 that is not covered by the primary pattern resist layer 14, Electroforming through electroplating of nickel alloys, etc. For example, a primary plating layer 15 which becomes a mask main body 2 having a thickness of 20 μm is formed (refer to FIG. 7(B)).  [0056] After that, The primary pattern resist layer 14 is dissolved and removed, Thereby obtaining a primary plating layer 15 that becomes the mask body 2, On the other hand, the mask main body 2 is provided with a plurality of independent vapor deposition through holes 8 forming a predetermined vapor deposition pattern 9 (see FIG. 7(C)).  [0057] After obtaining the plating layer 15 once, In the entire surface of the master 10 including the formed portion of the primary plating layer 15, A barrier layer 16 is provided. in particular, On the surface side of the master 10, For example, a negative photosensitive dry film resist layer, Laminating one to several with a predetermined thickness (for example, about 15 μm) set in advance, The barrier layer 16 is formed by thermocompression bonding (refer to Fig. 8(A)).  [0058] Then, On the surface of the barrier layer 16, As shown in Figure 8(B), After the mask film 17 having the light-transmitting holes 17a corresponding to the pattern forming region 2a of the mask main body 2 is closely adhered, Performing a treatment by hardening by exposure to ultraviolet light (Fig. 8(B), (C) Reference). With this, The portion corresponding to the pattern forming region 2a becomes the exposed barrier layer 16a, The other portion becomes the unexposed barrier layer 16b.  [0059] Here, The frame 3 of the processing unit 3b for separation is provided in advance, The alignment is performed so as to surround the plating layer 15 once, and is placed on the mother die 10 (refer to FIG. 8(C)).  The frame 3 here is due to the adhesion of the unexposed barrier layer 16b. It can be temporarily fixed on the master 10 so as not to easily move.  [0060] After the frame 3 is configured, Performing a process of dissolving and removing the unexposed barrier layer 16b exposed to the surface, A secondary pattern resist layer 18 covering the pattern formation region is formed (refer to FIG. 9(A)). In addition, An unexposed barrier layer 16b existing on the lower side of the frame 3, Does not appear on the surface but is not removed, Remaining on the master mold 10 continues to play the role of the fixed frame 3.  [0061] After that, Not covered by the secondary pattern resist layer 18, The upper surface of the primary plating layer 15 exposed to the surface of the peripheral edge 2b of the pattern forming region 2a, The surface of the master 10 exposed to the surface between the frame 3 and the primary plating layer 15 And on the surface of the frame 3, The metal layer 7 is formed by electroforming of a plating metal (refer to FIG. 9(B)). Through the metal layer 7, the primary plating layer 15 and the frame 3 can be integrally joined so as not to be separated.  [0062] In this case, The metal layer 7 is exposed on the upper surface of the primary plating layer 15 on the surface of the periphery 2b of the pattern forming region 2a, The thickness of the surface of the master 10 exposed to the surface between the primary plating layer 15 and the frame 3 was 30 μm. on the other hand, The thickness of the metal layer 7 on the surface of the frame 3 was 15 μm. This difference in thickness is due to the following conditions: The metal layer 7 is sequentially laminated from the surface of the master mold 10, After the height dimension of the unexposed barrier layer 16b is exceeded to reach the frame 3, The frame 3 and the master 10 are initially turned on. The formation of the metal layer 7 to the surface of the frame 3 is started.  [0063] After the formation of the metal layer 7, As a final procedure, An integrated plating layer 15 is formed from the master mold 10, The frame 3 and the metal layer 7 are peeled off (refer to FIG. 9(C)). Furthermore, The unexposed barrier layer 16b existing on the lower side of the secondary pattern resist layer 18 and the frame 3 is removed, The manufacture of the vapor deposition mask 1 is completed.  [0064] The vapor deposition mask 1 obtained by the above respective processes has a configuration in which the following state is obtained: The stress F in the direction in which the mask body 2 is contracted inward with respect to the outer frame 3 is generated.  In detail, For the master mold 10, a plating layer 15 is formed by electroforming in a material having a large thermal expansion coefficient. The plating layer 15 is formed on the surface of the master mold in a linear expansion state exceeding the mother mold in an environment where the temperature of electroforming is higher than the normal temperature. The deformation on the master 10 is limited, Therefore, in a normal temperature environment, shrinkage of a person who tries to shrink more than the master mold 10 does not occur. The stress in the direction in which the plating layer 15 is contracted toward the inner side is generated.  [0065] On the other hand, The frame 3 is disposed in the normal temperature environment for the master mold 10, The frame itself is also formed by a material with a low coefficient of thermal expansion. Therefore, in the state in which the primary plating layer 15 and the frame 3 are connected in the formation of the metal layer 7, The primary plating layer 15 maintains the stress in the direction in which it is inherently contracted inward. to this end, When the integrated primary plating layer 15 is separated from the frame 3 from the master mold 10, The primary plating layer 15, that is, the mask body 2, attempts to contract inwardly relative to the frame 3, It becomes a tensile force which acts on the frame 3 inward.  [0066] Next, The installation procedure of the vapor deposition device of the vapor deposition mask according to the present embodiment will be described.  As above, The mask body 2 is formed in a state in which stress is generated in a direction in which the frame 3 is contracted inward. The force that attempts to deform the frame 3 is applied from the mask body 2. herein, The casing 3 has a configuration in which the reinforcing frame portion 5 is integrally disposed on the outer side of the holding frame portion 4, and The reinforcing frame portion 5 has a structure in which the holding frame portion 4 held by the mask main body 2 on the inner side of the casing 3 is reinforced from the outside. With this, Increasing the rigidity of the frame 3 against the force that attempts to deform the frame 3 due to the stress of the mask body 2, The frame 3 that is stressed is not greatly deformed. and, The frame 3 is not easily deformed. This makes it a state in which the deformation of the mask main body 2 does not easily occur.  [0067] The vapor deposition mask 1 formed by the combination of the mask body 2 and the frame 3 will be formed. For a vapor deposition device that performs vapor deposition such as a vapor deposition bath, It can be set by vapor deposition. When setting, First, vapor deposition mask 1, The vapor deposition device is fixed after being properly positioned with respect to the frame member 50 provided for supporting the vapor deposition mask (FIG. 10, Figure 11 refers to). The frame member 50 is, for example, a frame-shaped member made of a material having a low thermal expansion coefficient such as a tile material. It is formed to have a thickness of 10 to 25 mm.  This fixing is performed by integrating the holding frame portion 4 in the frame 3 of the vapor deposition mask 1 into the frame member 50 in a state of being strongly strengthened by welding by spot welding or the like while being able to withstand heat during vapor deposition.  [0068] In addition, Keeping the fixing of the frame portion 4 to the frame member 50, Except for the frame member 50 provided in the vapor deposition device, In the case where the frame member 50 can be removed from the vapor deposition device, It is also possible to perform the frame member 50 which is easily handled and taken out to the outside of the evaporation device.  [0069] For the frame 3 of the vapor deposition mask 1, The frame member 50 is significantly stiffer. The fixing frame portion 4 is fixed to the frame member 50, The holding frame portion 4 is completely integrated without being offset or deformed with respect to the frame member 50, The mask main body 2 that is held by being held inside the holding frame portion 4 is not deformed by stress. The positional relationship with respect to the frame member 50 can be maintained. In addition, The frame member 50 may also be a rod body 51 that is disposed to traverse the middle portion of the frame shape (FIG. 13, Figure 14 refers to). In this case, Fixing the vapor deposition mask 1 to the frame member 50, The deformation of the central portion due to the self weight of the vapor deposition mask 1 can be suppressed. Although the rod 51 can be vertical for the frame member 50, horizontal, In either direction of the oblique direction, In addition, they can be combined in a grid shape or the like, and are arbitrarily set. However, when it overlaps with the mask main body 2, it becomes an obstacle of vapor deposition. Therefore, it is set to overlap with the frame 3. The rod body 51 can be formed simultaneously with the frame member 50 from the initial state of being integrated into the frame member 50. It is also possible to combine the frame member 50 and the frame member 50 to be integrally assembled. In addition, The rod body 51 is, for example, made of Invar, It is formed of a material having a low thermal expansion coefficient such as ceramics. To make the thickness 5 to 8 mm, However, the material of the rod body 51 may be the same as the frame member 50 or the frame member 50.  [0070] After the holding frame portion of the frame member 50 is fixed, The rigidity of the holding frame portion 4 of the frame body 3 is secured by the structure of the frame body 3 itself, In other words, it is not necessary to maintain the configuration in which the frame portion 4 is reinforced by the reinforcing frame portion 5 on the outer side thereof. In the evaporation process, The case where the vapor deposition mask 1 is smaller is better. Therefore, it does not need to be retained for reinforcement purposes. a reinforcing frame portion 5 that becomes an unnecessary part, The cutting processing unit 3b provided at the boundary with the holding frame portion 4 is cut, It is separated and removed from the holding frame portion 4 (refer to FIG. 12).  [0071] In the removal of the holding frame portion 4, The processing unit 3b for separation is provided in advance in the frame 3 as a processing target position when the reinforcing frame unit 5 is separated from the holding frame unit 4, So that it will not be forced and easy to separate, At the same time, the shape of the holding frame portion 4 that does not remain as a frame body, The reinforcing frame portion 5 is separated under the influence of the holding state of the mask main body 2 of the holding frame portion 4, It can be smoothly transferred to the evaporation process under the vapor deposition device.  [0072] In addition, The processing unit 3b for separation to be processed is a groove 3c that is continuously arranged in a line shape, a combination of a plurality of through holes 3d is formed at a predetermined interval in a continuous direction toward the groove 3c. The structure of the notch portion 3e in which the through hole 3d is provided with an acute angle is formed. to this end, When the separation processing portion 3b is cut and the reinforcing frame portion 5 is separated, The cutting section is easily formed along the separating processing portion 3b with the slit portion 3e as a starting point. It is difficult to leave a burr or the like on the side of the holding frame portion 4, It may not adversely affect the operations accompanying the evaporation process.  [0073] So, The vapor deposition mask according to the present embodiment is a holding frame portion 4 that holds the mask main body 2 on the inner side of the casing 3, A reinforcing frame portion 5 that reinforces it from the outside is provided, Increasing the rigidity of the frame 3 based on the force applied to the frame body 3 by the mask body 2 based on the stress of the mask body 2, Therefore, in a state where the displacement of each portion of the mask main body 2 from the original position is suppressed, Fixedly installed in the evaporation device, Ensuring the integration of the mask with the vapor-deposited substrate, The vapor deposition on the vapor-deposited substrate can be performed with high precision.  [0074] In addition, When evaporating the setting of the mask 1, The holding frame portion 4 in the frame 3 of the mask 1 is vapor-deposited, The frame member 50 of the vapor deposition device is fixed by welding or the like to obtain the setting state of the vapor deposition device. Therefore, the vapor deposition mask 1 can be placed in the vapor deposition device while maintaining the deformation of the mask body 2 by the frame 3. Preventing the displacement of the mask body 2 and making the integrated state of the mask and the vapor-deposited substrate accurate. Improve the accuracy of evaporation, The yield of the vapor-deposited product is increased. In addition, After the fixing of the frame 3 to the vapor deposition device, the reinforcing frame portion 5 is separated from the holding frame portion 4, The reinforcing frame portion 5 does not become an obstacle to the procedure after the fixing of the vapor deposition mask 1 is performed. The vapor deposition under the vapor deposition device can be performed without any problem.  [0075] In addition, The vapor deposition mask related to the foregoing embodiment, The separation processed portion 3c of the casing 3 has a shape in which a linearly continuous groove 3c is combined with a plurality of through holes 3d that are formed at a predetermined interval in the groove continuous direction. At any position of the boundary portion between the holding frame portion 4 and the reinforcing frame portion 5, a configuration is provided which has the same shape. But not limited to this, The shape of the separation processed portion 3c can also be changed according to the position on the frame 3. For example, it is also possible to correspond to the mask body 2 that is integrated in a state in which stress is attempted to be contracted inwardly with respect to the frame 3, and The frame 3 is assumed to have a predetermined amount of deformation of each part of the frame by a state in which a force based on the stress is applied to the frame in advance. The separation processing unit 3b is configured to have the following shape: The amount of expected deformation of the predetermined position of the casing 3 in which the separation processing portion 3b is provided is increased. The through processing hole 3b constituting the position is formed as a through hole, The ratio of the size of the portion where the recess or the groove is removed with respect to the portion of the portion which is not removed is smaller.  [0076] In this case, The processed portion 3b for separation of the frame 3 is formed by increasing or decreasing the removed portion depending on the possibility of deformation of each portion of the frame. that is, The removal portion in the separation processing portion 3b is set to At a position where the amount of deformation of the frame 3 due to the force applied to the frame 3 by the stress of the mask body 2 is increased, Decreasing the ratio of the removed portion relative to the residual portion that is not removed, On the other hand, where the amount of deformation of the frame becomes small, Increasing the proportion of the removed portion relative to the residual portion that is not removed, So that the deformation of the frame 3 is expected to be a large position, The ratio of the removed portion of the concave portion or the like of the separated processed portion 3b is reduced, and the strength of the frame 3 is sufficiently ensured. On the other hand, in a position where deformation of the frame 3 is not easily expected, Increasing the proportion of the removed portion of the separation processing portion 3b, Improve the processing efficiency during separation processing while ensuring proper strength. The rapid separation of the reinforcing frame portion 5 can be performed to smoothly transfer to the vapor deposition process.  [0077] In a specific example, As shown in Figure 15, In frame 3, Less rigid than the lower one, Susceptible to the influence of the stress based on the mask body 2, Among the respective sides of the frame, the separation processing portion 3b is located in the vicinity of the intermediate portion of the edge portion of each side of the rectangular mask body 2, Will act as a through hole, Concave, The part that is removed by the ditch is reduced as much as possible. Can increase the proportion of parts that are not removed, Minimize the rigidity due to the removed portion, The actual deformation is not easy to occur. on the other hand, In a large rigidity, Not susceptible to the force of the stress based on the mask body 2, The processing unit 3b for separation in the vicinity of the corner portion where the frame edges of the frame 3 meet, Increase relative to being a through hole, Concave, The proportion of the portion of the portion that is removed by the groove or not removed, It can reduce the time for separation processing.  [0078] In addition, In the manufacture of the vapor deposition mask related to the foregoing embodiment, Although the metal layer 7 is formed in such a manner that the plating layer 15 and the frame 3 are connected to each other, The metal layer 7 is used to realize the integration of the plating layer 15 and the frame 3 once. But not limited to this, Can also be taken before the frame configuration, Forming the primary plating layer 15 at the position where the frame is disposed, And the frame 3 is placed on the lower side of the primary plating layer 15 with the adhesive interposed therebetween. a structure in which the primary plating layer 15 and the frame 3 are bonded and integrated, The plating layer, that is, the integration of the mask body and the frame 3, can be performed briefly. The manufacturing efficiency of the mask is improved. In addition, Forming the metal layer 7 so as to cover the surface of the mask body 2 and the surface of the frame 3, It is preferable to make the contact state of the mask main body 2 and the frame 3 into contact. especially, Covering the surface (side portion) of the adhesive with a metal layer 7, So that it can effectively prevent washing treatment, Deterioration of the adhesive that occurs when the temperature rises, The contact state of the mask main body 2 with the frame 3 can be maintained over a long period of time.  [0079] In addition, In the manufacture of the vapor deposition mask related to the foregoing embodiment, Although the frame 3 is placed on the mother die 10, Forming the metal layer 7 on the surface of the frame 3, But not limited to this, The following components can also be adopted: Before electroforming the metal layer 7, Arranging the resist layer on a part or all of the upper surface of the frame body, The metal layer 7 is not formed integrally on the upper surface of the frame. The metal layer 7 is provided only on a part of the upper surface of the frame except for the necessary portion, or omitted. A stress relieving portion is provided on the surface of the frame 3.  [0080] In this case, The metal layer 7 is not continuous but partially localized on the upper surface of the frame 3 Fragmenter, Even if it is assumed that the internal stress is generated in the metal layer, it becomes the non-frame 3 as a whole and is partial, Fragmented player, Not susceptible to adverse effects such as deformation of the frame 3, The shape of the plane can be ensured.  [0081] In addition, In the manufacture of the vapor deposition mask related to the foregoing embodiment, Although formed after forming a plating layer 15, Forming the metal layer 7 in a single plating layer without special surface treatment, But not limited to this, It is also possible to form the plating layer 15 once, Before the formation of the barrier layer 16, Acid immersion is performed for a predetermined predetermined range in which the metal layer 7 is overlapped with the primary plating layer 15 Activation treatment such as electrolytic treatment.  [0082] In this case, Compared to no processing, A large increase in the contact strength between the activated portion of the plating layer 15 and the metal layer 7 thereon is obtained. In addition, Can also replace the activation treatment, For a given range of the plating layer 15, Forming a nickel strike, A thin layer of matt nickel or the like. Thereby, the contact strength of the thin layer forming portion of the plating layer 15 with the metal layer 7 thereon can be improved.  [0083] In addition, In the manufacture of the vapor deposition mask related to the foregoing embodiment, One plating layer 15, The frame 3 and the metal layer 7 overlap each other in a configuration in which the planes are in contact with each other. Alternatively, a plurality of through holes or recesses may be provided over the entire circumference of the peripheral edge 2b of the pattern forming region 2a of the primary plating layer 15 (mask main body 2). The metal layer 7 formed on the outer periphery 2b of the primary plating layer 15, A state in which the through hole or the recess is buried and a part of the metal layer 7 is caught in the outer peripheral edge 2b is formed.  [0084] In this case, Metal layer 7, Relative to the primary plating layer 15, Except for the upper surface of the peripheral edge 2b other than the pattern forming region 2a, Exist in each of the through holes or recesses of the outer periphery 2b, The contact strength with the outer peripheral edge 2b of the primary plating layer 15 is made larger. With this, The mask body 2 and the frame body 3 can be more strongly integrated and integrated via the metal layer 7 . It is possible to surely suppress inadvertent fall-off of the mask main body 2 with respect to the frame 3, Position offset, The vapor deposition precision and the reproduction accuracy of the vapor deposition product are improved.  (Second Embodiment of the Present Invention) In the manufacture of the vapor deposition mask in the first embodiment, a program for arranging the frame 3 on the master 10, The frame 3 of the processing unit 3b for separation is set in advance, In addition to the second embodiment, It can also be as shown in Figure 16. After the frame 3 is placed on the master 10, As a program for mask manufacturing, The processing unit 3b for separation is provided in the casing 3.  [0086] In this case, In order to remove the method of processing the separation processing unit 3b, A method of immersing the frame 3 disposed on the master 10 in an etching solution and dissolving it can be employed. In the case of this etching, An etching liquid having a selective etching property such as a material which dissolves the frame 3 and does not invade a portion other than the frame such as the mother die 10 is used. Or a part outside the predetermined range of the frame to be processed, A masking member 19 is disposed (refer to FIG. 16(B)).  [0087] Specifically, To cover a portion that is not an object of etching, For example, a photosensitive film resist layer is provided by thermocompression bonding or the like. For this resist layer, Perform a mask configuration to remove parts, Due to the hardening of exposure by ultraviolet radiation, Processing such as development, The masking material 19 is formed by hardening. In addition, In terms of masking materials, It is also possible to provide a protective film having resistance to an etching liquid so as to cover a portion which is not a target of etching.  [0088] After the masking material 19 is formed, The frame 3 and the master 10 are immersed in an etching solution, A portion of the surface of the frame 3 that is not covered by the masking material 19 is exposed to be etched, Remove to a predetermined depth (refer to Fig. 16 (C)). The portion where the portion of the frame 3 is removed by etching is thinner than the other portions of the frame 3, The processing unit 3b for separation which is easy to cut.  [0089] After etching, After the processed portion 3b for separation having a desired depth and shape is obtained, When the masking material 19 is dissolved by a predetermined removing agent and removed separately, Frame 3, The primary plating layer 15 is exposed to a state in which a metal layer can be formed by electroforming. Thereafter, as in the first embodiment described above, The procedure for forming a metal layer by electroforming is performed.  [0090] In addition, In addition to the separation processing portion 3b provided by the etching of the frame 3, The frame 3 disposed on the master 10 can also be paired. Mechanically processed, Laser processing performs the removal of non-essential parts, The separation processing unit 3b is provided.  [0091] So, A method of manufacturing a vapor deposition mask according to the present embodiment, Forming a primary plating layer 15 as a mask body on the master mold 10, The frame body 3 is disposed so as to be located around the primary plating layer 15, Further, in a predetermined range from the surface of the frame 3 to the surface of the peripheral edge 2b of the primary plating layer 15, In the process of forming the metal layer 7 for connecting the frame 3 and the primary plating layer 15, The frame 3 is provided with the separation processing unit 3b through a predetermined removal process. a primary plating layer 15 that can be integrally peeled off from the master mold 10, In a state in which the frame 3 and the metal layer 7 form the vapor deposition mask 1, In frame 3, With the processing unit 3b for separation as a boundary, An inner region (holding frame portion 4) that integrally holds the mask body 2 is formed, An outer region (reinforcing frame portion 5) that can be separated when not necessary when the entire frame is reinforced, The reinforcing frame portion 5 that is outside the processing portion 3b for separation of the casing 3 is sufficiently large. The rigidity of the frame 3 that increases the stress on the mask body 2, It is possible to suppress the offset of each part of the mask body from the position which should be at the position, The vapor deposition mask 1 is fixedly disposed on the vapor deposition device. Ensure the integration of the mask with the vapor-deposited substrate, The vapor deposition on the vapor-deposited substrate can be performed with high precision.  [0092] In addition, After the fixed setting of the vapor deposition mask 1 on the vapor deposition device side, When it is ensured that the rigidity of the frame body 3 of the reinforcing frame portion 5 outside the processing portion 3b for separation of the frame 3 is unnecessary, The separation processing is performed in the separation processing portion 3b so that the reinforcing frame portion 5 can be easily separated. It can be smoothly transferred to the evaporation process through the vapor deposition device. The shape of the holding frame portion 5 remaining in the frame 3 may not be According to this, the reinforcing frame portion 5 is separated under the influence of the holding state of the mask main body 2, The subsequent vapor deposition process can be carried out without problems.  (Third Embodiment of the Present Invention) In the installation of the vapor deposition device of the vapor deposition mask 1 according to the first embodiment, After the manufacture of the vapor deposition mask, The vapor deposition mask 1 is directly fixed to the frame member 50 of the vapor deposition device, An evaporation mask is disposed on the vapor deposition device, In addition to the third embodiment, It can also be as shown in Figures 17 to 24, A tensile force is applied to each of the outer portions of the frame 3 of the vapor deposition mask 1 The displacement of the frame body 3 and the mask body 2 is set in the allowable range, and is set in the vapor deposition device.  [0094] in the vapor deposition mask 1 which is installed in the state before the vapor deposition device is completed, Like the first embodiment described above, The mask body 2 is formed in a state in which stress is generated in a direction in which the frame 3 is contracted inward. The force that attempts to deform the frame 3 is applied from the mask body 2. herein, The casing 3 has a configuration in which the reinforcing frame portion 5 is integrally disposed on the outer side of the holding frame portion 4, and The reinforcing frame portion 5 is configured to reinforce the holding frame portion 4 that is held by the mask body 2 inside the casing 3 from the outside. With this, Increasing the rigidity of the frame 3 against the force that attempts to deform the frame 3 due to the stress of the mask body 2, The frame 3 that is stressed is not greatly deformed. and, The frame 3 is not easily deformed. This makes it a state in which the deformation of the mask main body 2 does not easily occur.  [0095] However, The frame 3 is also formed to be thin as part of the vapor deposition mask 1 and thus cannot be too thick. To the relationship of the treatment at the time of fixing of the frame member 50, There is also a certain limit on the size of the reinforcing frame portion 5, Therefore, the rigidity of the frame 3 is limited, The deformation of the frame 3 cannot be completely suppressed.  [0096] To this end, When the force applied from the mask body 2 is large, A part of the frame 3 is slightly deformed toward the inner side, The state in which the mask main body 2 integrated with the frame body 3 is allowed to contract is deformed. As a result, slight deformation of the mask body 2 may not be suppressed. at this time, The dimensional accuracy of the vapor-deposited formation is strict. When the allowable range of the positional deviation of the mask main body 2 is small, Producing a displacement exceeding an allowable range at a predetermined position of the mask body 2, It is feared that the yield of the vapor deposition product is deteriorated.  [0097] In this regard, The setting of the evaporation mask 1 to the vapor deposition device, Use the following procedure: Applying a force against the force that deforms the frame body 3 based on the stress of the mask body 2 is applied to the frame body 3, The displacement of the frame 3 falls within an allowable range, While maintaining the displacement of the frame 3 falling within the allowable range, The holding frame portion 4 of the frame 3 is fixed to the frame member 50. With this, Suppressing deformation of the frame 3, At the same time, the offset from the correct position of the mask body 2 accompanying the deformation of the frame 3 is suppressed.  [0098] The specific set of procedures is as follows: First, a series of procedures such as the following in which the displacement falls within the allowable range are repeated until the displacement falls within the allowable range at any position of the housing 3 and the mask main body 2: The displacement from the original state of the frame 3 and the mask body 2 constituting the vapor deposition mask 1 is measured. The outer circumference of the frame 3 on the outer side of the position where the large displacement is generated is The stretching force is applied from the outside. and, Maintaining the state in which the displacement falls within the allowable range of the frame body 3 and the mask body 2 by the tensile force. The holding frame portion 4 of the frame 3 is fixed to the frame member 50. Thereafter, the tensile force applied to the frame 3 is liberated. In addition, In terms of the position at which the tensile force is applied to the outer circumference of the frame, A position other than the outer circumferential position of the frame on the outer side (extension line) of the lattice-shaped portion inside the casing is targeted. The reason is: In the outer part of the outer circumference of the frame, on the outer side of the lattice-shaped portion inside the frame, The rigidity is high due to the combination with the lattice portion. Deformation under stress based on the mask body is not easy to occur, It is assumed that even if a tensile force is applied from the outside in the case of deformation, It is still not easy to produce a reverse deformation such as offsetting deformation.  [0099] In detail, The first procedure, The displacement of the frame 3 of the vapor deposition mask 1 and the respective positions of the mask main body 2 in two directions parallel to the outer circumference of the rectangular frame was measured. then, Second procedure, If the inward displacement of the predetermined position does not fall within the preset allowable range, For the outer periphery of the frame 3 located at the outer side where the maximum displacement occurs, An outwardly defined tensile force that is parallel to the direction of the maximum displacement, It is applied as a force at which the displacement at the aforementioned position falls within the above-described allowable range.  [0100] Next, Third procedure, The displacement in the above two directions at each position of the frame and the mask body was measured while the tensile force was applied. After this measurement, Fourth procedure, In the case where the newly generated inward displacement does not fall within the aforementioned allowable range, While maintaining the tensile force applied, For the outer circumference of the frame on the outer side of the position where the new displacement is newly generated, An outwardly defined tensile force that will be parallel to the direction of the new maximum displacement, It is further applied as a force in which the displacement of the above position falls within the allowable range.  [0101] In addition, The fifth procedure, At any position on the inner side of the outer circumference of the frame to which the tensile force has been applied, When it is determined that the other tensile force accompanying the addition is such that the outward displacement does not fall within a predetermined allowable range, In order to make the displacement of the aforementioned position fall within the allowable range, The adjustment of the tensile force reduction of the outer peripheral portion of the frame applied to the outer side of the aforementioned position is performed.  [0102] Then, The third to fifth respective procedures are repeated until the measurement displacement at each position of the housing 3 and the mask main body 2 falls within the allowable range.  [0103] When the specific example is used for explanation, After the manufacturing, the vapor deposition mask, In the longitudinal direction (y-axis direction) of the frame 3 in terms of the maximum displacement of the position A of the mask body 2, it is confirmed by measurement -6. The displacement of 1 μm, that is, toward the inside of the frame. A displacement of 1 μm (refer to Fig. 17). Since the displacement does not fall within the allowable range (within ±1 μm), the outer peripheral portion (the upper center and the lower center) of the frame 3 on the outer side in the y-axis direction at the position A where the maximum displacement occurs is directed to the direction of the maximum displacement. The parallel y-axis direction applied a tensile force of 40 N in each direction on the outer side of the frame (see FIG. 18). [0104] However, when the displacement of each position of the frame body and the mask body is measured at the stage of applying the tensile force of 40 N, the position A of the mask main body 2 is still in the y-axis of the frame 3 in terms of the maximum displacement. Direction confirmation-3. A displacement of 0 μm (refer to Fig. 18). Since the displacement does not fall within the allowable range, the outer peripheral portion (the upper center and the lower center) of the frame 3 located on the outer side in the y-axis direction of the position A is formed in the same manner as the above-mentioned frame, and becomes a frame in the y-axis direction. In each of the outer directions, a tensile force of 80 N is applied as a force in which the displacement of the position A falls within the allowable range (see FIG. 19). [0105] When the tensile force of 80 N is added to the y-axis direction, the displacement of each position of the frame is measured, and the position B of the mask body 2 is in the lateral direction (x-axis direction) of the frame 3 in terms of the maximum displacement. New confirmation by measurement - 2. The displacement of 4 μm is confirmed in the inside of the frame. 4 μm displacement (see Figure 19 for reference). Since the displacement does not fall within the allowable range, the outer periphery of the casing 3 on the outer side in the x-axis direction of the position B where the maximum displacement is generated is maintained while maintaining the tensile force (80 N) in the previous y-axis direction. Four parts of the part (two places near the center of the left side and two places near the center of the right side) are in the x-axis direction parallel to the direction of the maximum displacement, and become the outer side of the frame as the displacement of the position B. For the force of the range, a tensile force of 40 N was applied (refer to Fig. 20 for reference). [0106] When a tensile force of 40 N is applied to the x-axis direction, and the displacement of each position of the frame and the mask body is measured, the position C of the mask body 2 is in the y-axis of the frame 3 in terms of the maximum displacement. New direction confirmation -1. The displacement of 5 μm, that is, the inside of the frame is confirmed to be 1. A displacement of 5 μm (refer to Fig. 20). Since the displacement does not fall within the allowable range, the position at the position C at which the maximum displacement is generated is maintained while maintaining the tensile force (80 N) in the previous y-axis direction and the tensile force (40 N) in the x-axis direction. The outer peripheral portion of the frame 3 on the outer side in the y-axis direction (the two portions slightly separated from the center of the upper side and the two portions slightly separated from the center of the lower side) are formed in a frame in the y-axis direction parallel to the direction of the maximum displacement. In each of the outer directions, a tensile force of 20 N is applied as a force in which the displacement of the position C falls within the allowable range (see FIG. 21). [0107] When a tensile force of 20 N is applied to the y-axis direction, and the displacement of each position of the frame and the mask body is measured, the position D of the mask body 2 is in the y-axis of the frame 3 in terms of the maximum displacement. Direction confirmation +1. A displacement of 1 μm, that is, an external confirmation of the frame 1. A displacement of 1 μm (refer to Fig. 21). Since the displacement does not fall within the allowable range, the outer peripheral portion of the casing 3 on the outer side in the y-axis direction at the position D where the maximum displacement is generated is maintained while maintaining the tensile force (40 N) in the previous x-axis direction. The two places (the center of the upper side and the center of the lower side) are first reduced to 60N in the direction in which the y-axis direction is the outer side of the frame, and are on the outer circumference of the frame 3 (from the top) In the four places where the center is slightly separated from the two places which are slightly separated from the center of the lower side, the tensile force (20N) applied to each direction which becomes the outer side of the frame in the y-axis direction is increased to 30N (Fig. 22). Reference), the displacement of the position D falls within the allowable range. [0108] When the tensile force added to the y-axis direction is adjusted and adjusted, and the displacement of each position of the frame and the mask body is measured, the position E of the mask body 2 is in the maximum displacement. 3 new x-axis direction confirmed -1. The displacement of 1 μm, that is, the inside of the frame is confirmed to be 1. A displacement of 1 μm (refer to Fig. 22). Since the displacement does not fall within the allowable range, the position at which the maximum displacement occurs is maintained while maintaining the tensile force (60N, 30N) in the previous y-axis direction and the tensile force (40N) in the x-axis direction. In the x-axis direction parallel to the direction of the maximum displacement, the outer peripheral portion of the frame 3 on the outer side in the x-axis direction (the two portions slightly separated from the center of the left side and the two portions slightly separated from the center of the right side) are formed in four directions. A tensile force of 20 N was applied to each direction on the outer side of the frame (see Fig. 23 for reference). [0109] When a tensile force of 20 N is applied to the x-axis direction, and the displacement of each position of the frame and the mask body is measured, the position F of the mask body 2 is in the y-axis of the frame 3 in terms of the maximum displacement. New direction confirmation -1. The displacement of 2 μm, that is, the inside of the frame is confirmed to be 1. 2 μm displacement (see Figure 23 for reference). Since the displacement does not fall within the allowable range, the position at which the maximum displacement is generated is maintained while maintaining the tensile force (80 N) in the previous y-axis direction and the tensile force (40 N, 20 N) in the x-axis direction. In the outer peripheral portion of the frame 3 on the outer side in the y-axis direction (the two portions slightly separated from the center of the upper side and the two portions slightly separated from the center of the lower side), the first four sides of the frame 3 in the y-axis direction are first to the outside of the frame in the y-axis direction. The tensile force (30 N) applied in the direction is reduced to 20 N (refer to Fig. 24), so that the displacement of the position F falls within the allowable range. [0110] When the tensile force applied in the y-axis direction is adjusted as described above, and the displacement of each position of the frame and the mask body is measured, the maximum displacement of the frame 3 and the mask body 2 is at the position G at x. Axis direction confirmation-0. The displacement of 8μm, that is, the 0 to the inside of the frame. A displacement of 8 μm (refer to Fig. 24). Since this displacement falls within the allowable range, the measurement and the addition of the tensile force and the repetition of the adjustment procedure are completed. When the above-described respective procedures are repeated such that the displacement falls within the allowable range, the holding frame portion 4 in the frame 3 of the vapor deposition mask 1 is held and attached to the frame body 3, and is fixed to be positioned. A frame member 50 in the vapor deposition device or outside the vapor deposition device. Fixing the holding frame portion 4 to the frame member 50, and obtaining the mask body 2 in a state of being held at a proper position without the offset with the frame body 3, releasing the tensioning force to the frame body 3, and In the first embodiment, the reinforcing frame portion 5 of the casing 3 is cut at the separation processing portion 3b provided at the boundary with the holding frame portion 4, and is separated from the holding frame portion 4. In the case where the frame member 50 is in the vapor deposition device, the installation procedure of the vapor deposition mask 1 is completed in this state, and the frame member 50 is fixed to the frame member 50 and the vapor deposition mask 1 in the case of the frame member 50 outside the vapor deposition device. When the inside of the vapor deposition device, the setting procedure of the vapor deposition mask 1 ends. In the above-described manner, the method of installing the vapor deposition mask according to the present embodiment is a predetermined position of the casing 3 that may generate a large stress due to the stress of the mask body 2 of the vapor deposition mask 1. When the tensile force is applied from the outside, the program in which the displacement falls within the allowable range is repeated until the displacement falls within the allowable range at any position of the housing 3, and the frame is held in a state in which the displacement falls within the allowable range. The holding frame portion 4 of the body 3 is fixed to the frame member 50, and after the evaporation mask 1 is placed in the state of the evaporation device, the tensile force applied to the frame body 3 is released, so that the accompanying frame 3 of the evaporation mask 1 is formed. The deviation of the deformed mask body 2 from the correct position is ensured by the method of suppressing the deformation of the frame 3 by the addition of the external force, and the frame portion 3 is fixed to the frame member 50 to ensure vapor deposition. The appropriate setting state of the cover 1 to the vapor deposition device can further improve the accuracy associated with vapor deposition.

[0113][0113]

1‧‧‧蒸鍍遮罩1‧‧‧ evaporated mask

2‧‧‧遮罩主體2‧‧‧Mask body

2a‧‧‧圖案形成區域2a‧‧‧ pattern forming area

2b‧‧‧外周緣2b‧‧‧ outer periphery

3‧‧‧框體3‧‧‧ frame

3a‧‧‧保持框部3a‧‧‧ Keep the frame

3b‧‧‧補強框部3b‧‧‧Reinforcement frame

3c‧‧‧分離加工部3c‧‧‧Separation and Processing Department

3d‧‧‧溝3d‧‧‧ditch

3e‧‧‧貫穿孔3e‧‧‧through holes

3f‧‧‧切槽部3f‧‧‧cutting

7‧‧‧金屬層7‧‧‧metal layer

8‧‧‧蒸鍍通孔8‧‧‧ evaporated through holes

9‧‧‧蒸鍍圖案9‧‧‧ evaporated pattern

10‧‧‧母模10‧‧‧Female model

11‧‧‧阻擋層11‧‧‧Block

12‧‧‧遮罩膜12‧‧‧ mask film

13‧‧‧薄部13‧‧‧

14‧‧‧一次圖案抗蝕層14‧‧‧One pattern resist

15‧‧‧一次電鍍層15‧‧‧One plating

16‧‧‧阻擋層16‧‧‧Block

17‧‧‧遮罩膜17‧‧‧ Mask film

18‧‧‧二次圖案抗蝕層18‧‧‧Second pattern resist

19‧‧‧遮蔽材19‧‧‧Mask

50‧‧‧框件50‧‧‧ frame

[0024] 　　[圖1]本發明的第1實施方式相關的蒸鍍遮罩的示意平面圖。 　　[圖2]本發明的第1實施方式相關的蒸鍍遮罩的主要部分構成說明圖。 　　[圖3]本發明的第1實施方式相關的蒸鍍遮罩的主要部分示意剖面圖。 　　[圖4]本發明的第1實施方式相關的蒸鍍遮罩中的框體的平面圖。 　　[圖5]本發明的第1實施方式相關的蒸鍍遮罩中的框體的分離用加工部的局部放大圖。 　　[圖6]本發明的第1實施方式相關的蒸鍍遮罩的製造中的一次圖案抗蝕層形成過程說明圖。 　　[圖7]本發明的第1實施方式相關的蒸鍍遮罩的製造中的一次電鍍層形成程序說明圖。 　　[圖8]本發明的第1實施方式相關的蒸鍍遮罩的製造中的二次圖案抗蝕層形成過程說明圖。 　　[圖9]本發明的第1實施方式相關的蒸鍍遮罩的製造中的金屬層形成程序及蒸鍍遮罩與母模的分離狀態說明圖。 　　[圖10]本發明的第1實施方式相關的蒸鍍遮罩的往製造裝置框件的載置過程說明圖。 　　[圖11]本發明的第1實施方式相關的蒸鍍遮罩的往製造裝置框件的固定狀態說明圖。 　　[圖12]從本發明的第1實施方式相關的蒸鍍遮罩中的框體的補強框部分離狀態說明圖。 　　[圖13]設置本發明的第1實施方式相關的蒸鍍遮罩的其他製造裝置框件的示意構成說明圖。 　　[圖14]本發明的第1實施方式相關的蒸鍍遮罩的往其他製造裝置框件的固定狀態說明圖。 　　[圖15]本發明的第1實施方式相關的蒸鍍遮罩中的框體的其他分離用加工部的示意配置狀態說明圖。 　　[圖16]本發明的第2實施方式相關的蒸鍍遮罩的製造方法中的對於框體的除去加工程序說明圖。 　　[圖17]本發明的第3實施方式相關的蒸鍍遮罩的製造完畢狀態下的框體的變形狀態說明圖。 　　[圖18]對於在本發明的第3實施方式相關的蒸鍍遮罩的往製造裝置的設置時的框體的第一階段的拉伸力附加狀態說明圖。 　　[圖19]對於在本發明的第3實施方式相關的蒸鍍遮罩的往製造裝置的設置時的框體的第二階段的拉伸力附加狀態說明圖。 　　[圖20]對於在本發明的第3實施方式相關的蒸鍍遮罩的往製造裝置的設置時的框體的第三階段的拉伸力附加狀態說明圖。 　　[圖21]對於在本發明的第3實施方式相關的蒸鍍遮罩的往製造裝置的設置時的框體的第四階段的拉伸力附加狀態說明圖。 　　[圖22]對於在本發明的第3實施方式相關的蒸鍍遮罩的往製造裝置的設置時的框體的第五階段的拉伸力附加狀態說明圖。 　　[圖23]對於在本發明的第3實施方式相關的蒸鍍遮罩的往製造裝置的設置時的框體的第六階段的拉伸力附加狀態說明圖。 　　[圖24]對於在本發明的第3實施方式相關的蒸鍍遮罩的往製造裝置的設置時的框體的第七階段的拉伸力附加狀態說明圖。[ Fig. 1] Fig. 1 is a schematic plan view of a vapor deposition mask according to a first embodiment of the present invention. FIG. 2 is an explanatory view showing a configuration of a main part of a vapor deposition mask according to a first embodiment of the present invention. 3 is a schematic cross-sectional view showing a main part of a vapor deposition mask according to a first embodiment of the present invention. 4 is a plan view of a casing in a vapor deposition mask according to a first embodiment of the present invention. FIG. 5 is a partially enlarged view of a processing portion for separation of a casing in a vapor deposition mask according to a first embodiment of the present invention. Fig. 6 is an explanatory view showing a process of forming a primary pattern resist layer in the manufacture of a vapor deposition mask according to the first embodiment of the present invention. FIG. 7 is an explanatory diagram of a primary plating layer forming procedure in the manufacture of the vapor deposition mask according to the first embodiment of the present invention. FIG. 8 is an explanatory view showing a process of forming a secondary pattern resist layer in the manufacture of a vapor deposition mask according to the first embodiment of the present invention. FIG. 9 is a view showing a metal layer forming program and a state in which the vapor deposition mask and the master mold are separated in the production of the vapor deposition mask according to the first embodiment of the present invention. FIG. 10 is an explanatory view showing a mounting process of the vapor deposition mask to the manufacturing apparatus frame member according to the first embodiment of the present invention. [Fig. 11] Fig. 11 is a view showing a state in which a vapor deposition mask according to a first embodiment of the present invention is attached to a manufacturing apparatus frame. FIG. 12 is an explanatory view showing a state in which the reinforcing frame portion of the casing in the vapor deposition mask according to the first embodiment of the present invention is separated. FIG. 13 is a schematic configuration diagram of a frame member of another manufacturing apparatus in which a vapor deposition mask according to the first embodiment of the present invention is provided. FIG. 14 is a view showing a state in which the vapor deposition mask according to the first embodiment of the present invention is attached to another manufacturing apparatus frame member. [Fig. 15] Fig. 15 is a schematic explanatory diagram showing a state of arrangement of other processing parts for separation of the casing in the vapor deposition mask according to the first embodiment of the present invention. FIG. 16 is an explanatory diagram of a removal processing procedure for a casing in a method of manufacturing a vapor deposition mask according to a second embodiment of the present invention. FIG. 17 is a view showing a state of deformation of the casing in a state in which the vapor deposition mask according to the third embodiment of the present invention is manufactured. FIG. 18 is a view showing an additional state of the tensile force in the first stage of the casing at the time of installation of the vapor deposition mask according to the third embodiment of the present invention. FIG. 19 is a view showing an additional state of the tensile force in the second stage of the casing at the time of installation of the vapor deposition mask according to the third embodiment of the present invention. FIG. 20 is a view showing an additional state of the tensile force in the third stage of the casing at the time of installation of the vapor deposition mask according to the third embodiment of the present invention. FIG. 21 is a view showing an additional state of the tensile force in the fourth stage of the casing at the time of installation of the vapor deposition mask according to the third embodiment of the present invention. [Fig. 22] A state in which the tensile force is added to the fifth stage of the casing at the time of installation of the vapor deposition mask according to the third embodiment of the present invention. FIG. 23 is a view showing an additional state of the tensile force in the sixth stage of the casing at the time of installation of the vapor deposition mask according to the third embodiment of the present invention. [Fig. 24] A state in which the tensile force is added to the seventh stage of the casing at the time of installation of the vapor deposition mask according to the third embodiment of the present invention.

Claims (7)

一種蒸鍍遮罩，具備依既定圖案設置獨立的多數個蒸鍍通孔的遮罩主體、與遮罩主體一體地配設的框體， 　　前述框體具有與遮罩主體進行連結一體化的保持框部、與該保持框部一體地配設的補強框部。A vapor deposition mask comprising a mask main body in which a plurality of independent vapor deposition through holes are provided in a predetermined pattern, and a frame body integrally provided with the mask main body, wherein the frame body has a connection and integration with the mask main body a frame portion and a reinforcing frame portion that is integrally provided with the holding frame portion. 如請求項1的蒸鍍遮罩，其中， 　　在前述框體的保持框部與補強框部的邊界部分設置分離用加工部，該分離用加工部係作成規則或不規則且線狀地排列複數個貫穿孔或凹部中的至少任一者的配置或作成溝線狀地連續的配置者。The vapor deposition mask according to claim 1, wherein a separation processing portion is provided at a boundary portion between the holding frame portion and the reinforcing frame portion of the housing, and the separation processing portion is formed in a regular or irregular and linear arrangement. At least one of the through holes or the recesses is arranged or arranged in a continuous manner in a groove shape. 如請求項2的蒸鍍遮罩，其中， 　　使前述遮罩主體在予以殘存試圖對框體朝內側收縮的應力的狀態下與框體的保持框部一體化而成， 　　使前述框體為預先假定基於前述應力之力施加於框體的狀態而算出框體各部分的預想變形量而成者， 　　前述分離用加工部設定為以下形狀：在設置前述框體的分離用加工部的位置的前述預想變形量越大，使在該位置作為前述貫穿孔、凹部或溝而被除去的部分的大小的相對於不被除去的殘餘部分的比例越小。The vapor deposition mask of claim 2, wherein the mask main body is integrated with the holding frame portion of the housing in a state in which the stress is attempted to contract the inside of the housing, and the housing is made in advance. It is assumed that the predetermined amount of deformation of each part of the frame body is calculated based on the state in which the force of the stress is applied to the frame body, and the separation processing portion is set to have the following shape: the position at which the separation processing portion of the frame body is provided. The larger the amount of deformation is expected, the smaller the ratio of the size of the portion that is removed as the through hole, the recess, or the groove at this position with respect to the portion that is not removed. 如請求項2或3的蒸鍍遮罩，其中， 　　前述分離用加工部設為在保持框部與補強框部的邊界部分被線狀地連續配置的溝、在該溝內往溝連續方向以形成既定間隔的配置而穿設複數個的貫穿孔的組合形狀， 　　該貫穿孔在貫穿孔的溝的連續的方向的端部設置銳角的切槽部。The vapor deposition mask according to claim 2 or 3, wherein the separation processing portion is a groove that is continuously arranged in a line at a boundary portion between the holding frame portion and the reinforcing frame portion, and is continuous in the groove in the groove direction. A combination of a plurality of through holes is formed in a predetermined interval, and the through hole is provided with an acute-angled groove at an end portion of the groove in the continuous direction of the groove. 一種蒸鍍遮罩之設置方法，在蒸鍍裝置的預先設定的位置設置蒸鍍遮罩， 　　使前述蒸鍍遮罩為，對於以既定圖案設置獨立的多數個蒸鍍通孔的複數個遮罩主體，將分別具有保持框部與補強框部的框體以包圍遮罩主體之外側的方式配置而製造者，該保持框部係可與遮罩主體之外周緣一體地連結者，該補強框部係以連續包圍該保持框部之外側的配置與保持框部一體地配設者， 　　對在前述蒸鍍裝置的蒸鍍遮罩支承用的框件，一體地固定蒸鍍遮罩的框體的保持框部， 　　對固定於前述框件的狀態下的框體的保持框部，將補強框部分離而除去。A method for disposing a vapor deposition mask, wherein a vapor deposition mask is provided at a predetermined position of the vapor deposition device, and the vapor deposition mask is a plurality of masks for providing a plurality of independent vapor deposition through holes in a predetermined pattern. The main body has a frame body having a holding frame portion and a reinforcing frame portion, and is disposed so as to surround the outer side of the mask main body, and the holding frame portion is integrally coupled to the outer periphery of the mask main body, and the reinforcing frame is integrally connected to the outer periphery of the mask main body. The unit is integrally disposed with the holding frame portion in an arrangement that continuously surrounds the outer side of the holding frame portion, and the frame of the vapor deposition mask is integrally fixed to the frame member for supporting the vapor deposition mask of the vapor deposition device. The holding frame portion separates and removes the reinforcing frame portion from the holding frame portion of the frame body fixed to the frame member. 如請求項5的蒸鍍遮罩之設置方法，其中， 　　使前述框體為具有矩形狀之外形者， 　　包含第一程序、第二程序、第三程序、第四程序、第五程序， 　　該第一程序係在蒸鍍遮罩的完成狀態下，就與在框體及遮罩主體各位置的矩形狀的框體外周的各邊平行的兩方向的位移進行測定者， 　　該第二程序係經測定的既定位置的向內的位移不會落入預先設定的容許範圍的情況下，對位於產生最大的位移的位置之外側的框體外周部，將與最大位移的方向平行的向外的既定的拉伸力，作為如前述位置的位移落入前述容許範圍的大小的力而施加者， 　　該第三程序係在施加拉伸力的狀態下重新測定框體及遮罩主體各位置的前述兩方向的位移者， 　　該第四程序係在該測定後，新產生向內的位移不落入前述容許範圍的位置的情況下，在維持施加拉伸力的狀態之下，對位於新產生最大的位移的位置之外側的框體外周部，將與新的最大位移的方向平行的向外的既定的拉伸力，作為如前述位置的位移落入前述容許範圍的大小的力而進一步施加者， 　　該第五程序係在位於已施加拉伸力的框體外周部的內側的任一位置，測定出伴隨之後的其他拉伸力附加將使得向外的位移不落入預先設定的容許範圍的狀態的情況下，為了使前述位置的位移落入容許範圍，進行將施加於前述位置之外側的框體外周部的拉伸力減小的調整者， 　　重複進行前述第三至第五各程序，直到在框體及遮罩主體各位置的測定位移落入容許範圍， 　　將位移落入容許範圍的蒸鍍遮罩的框體中的保持框部，在維持將拉伸力附加於框體之下固定於前述框件，固定後解除往框體的拉伸力的附加。The method of setting a vapor deposition mask according to claim 5, wherein the frame has a rectangular shape, and includes a first program, a second program, a third program, a fourth program, and a fifth program. In the completed state of the vapor deposition mask, the measurement is performed in two directions parallel to the sides of the outer circumference of the rectangular frame at each position of the frame and the mask body, and the second program is When the measured inward displacement of the predetermined position does not fall within the predetermined allowable range, the outer peripheral portion of the frame outside the position at which the maximum displacement occurs is set outward in parallel with the direction of the maximum displacement. The tensile force is applied as a force at which the displacement of the position falls within the allowable range, and the third program re-measures the two positions of the frame and the mask body in a state where the tensile force is applied. In the direction shifter, the fourth program is in a state in which the tensile force is maintained when the newly generated inward displacement does not fall within the allowable range after the measurement. In the outer peripheral portion of the frame on the outer side of the position where the maximum displacement is newly generated, the outward predetermined tensile force parallel to the direction of the new maximum displacement falls as the above-mentioned allowable range as the displacement of the aforementioned position. The force of the size is further applied, and the fifth program is located at any position on the inner side of the outer periphery of the frame to which the tensile force has been applied, and it is determined that the additional tensile force accompanying the subsequent addition will cause the outward displacement not to When the state of the predetermined range is within the allowable range, the adjuster for reducing the tensile force of the outer peripheral portion of the frame applied to the outer side of the position is repeated in order to reduce the displacement of the position. In the third to fifth procedures, until the measurement displacement at each position of the frame and the mask main body falls within the allowable range, the displacement of the frame in the frame of the vapor deposition mask in the allowable range is maintained. The extension force is fixed to the frame member under the frame body, and is fixed to release the extension of the tensile force to the frame body. 一種蒸鍍遮罩之製造方法，該蒸鍍遮罩係由設置多數個蒸鍍通孔的金屬製的複數個遮罩主體、包圍遮罩主體之外側而配置的金屬製的框體所成者， 　　該製造方法包含第1電鑄程序、框體配設程序、框體加工程序、第2電鑄程序、剝離程序， 　　該第1電鑄程序係在母模上的複數個既定位置以金屬的電鑄形成與前述遮罩主體對應的一次電鍍層者 　　該框體配設程序係在以前述一次電鍍層位於預先設於前述框體的複數個開口內的方式進行位置對準之下，將框體配置於母模上者， 　　該框體加工程序係將分離用加工部設於框體者，該分離用加工部係對於母模上的框體進行既定的除去加工，作成規則或不規則且線狀地排列複數個貫穿孔或凹部中的至少任一者的配置或作成溝線狀地連續的配置者， 　　該第2電鑄程序係於從前述框體的一部分或全部的表面跨至前述一次電鍍層之外周緣表面的既定範圍，以電鑄形成金屬層，經由該金屬層將框體與一次電鍍層一體地連結為不會分離者， 　　該剝離程序係從前述母模將一體的一次電鍍層、框體及金屬層進行剝離者。A method of manufacturing a vapor deposition mask comprising a plurality of metal mask bodies provided with a plurality of vapor deposition through holes, and a metal frame body disposed to surround an outer side of the mask body The manufacturing method includes a first electroforming program, a housing arrangement program, a frame machining program, a second electroforming program, and a peeling program. The first electroforming program is a plurality of predetermined positions on the mother mold. Forming a single plating layer corresponding to the mask body by electroforming, the frame arrangement procedure is performed by positioning the primary plating layer so as to be positioned in a plurality of openings previously provided in the frame body When the body is placed on the master mold, the frame machining program is to provide the separation processing unit to the frame body, and the separation processing unit performs predetermined removal processing on the frame body on the master mold to make a regular or irregular shape. Arranging at least one of a plurality of through holes or recesses in a line shape or in a continuous arrangement in a groove shape, the second electroforming program is straddle from a surface of a part or all of the frame body a predetermined range of the peripheral surface of the primary plating layer is electroformed to form a metal layer, and the frame and the primary plating layer are integrally coupled to each other via the metal layer so as not to be separated, and the stripping process is integrated from the master mold The plating layer, the frame body and the metal layer are peeled off once.
TW106145884A 2016-12-28 2017-12-27 Mask for vapor deposition, installation method and manufacturing method thereof TWI804481B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016257000A JP6851820B2 (en) 2016-12-28 2016-12-28 Thin-film deposition mask and its installation method and manufacturing method
JP2016-257000 2016-12-28

Publications (2)

Publication Number Publication Date
TW201833388A true TW201833388A (en) 2018-09-16
TWI804481B TWI804481B (en) 2023-06-11

Family

ID=62844205

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106145884A TWI804481B (en) 2016-12-28 2017-12-27 Mask for vapor deposition, installation method and manufacturing method thereof

Country Status (3)

Country Link
JP (4) JP6851820B2 (en)
KR (1) KR102435856B1 (en)
TW (1) TWI804481B (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI669567B (en) * 2018-08-22 2019-08-21 鋆洤科技股份有限公司 Fine metal mask and method for making the same
CN110592529A (en) * 2019-10-30 2019-12-20 昆山国显光电有限公司 Mask frame
TWI757041B (en) * 2021-01-08 2022-03-01 達運精密工業股份有限公司 Mask
TWI826677B (en) * 2019-03-28 2023-12-21 日商大日本印刷股份有限公司 Evaporation cover and manufacturing method of evaporation cover

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7133383B2 (en) * 2018-07-31 2022-09-08 マクセル株式会社 Evaporation mask
JP2021042439A (en) * 2019-09-11 2021-03-18 株式会社ジャパンディスプレイ Vapor deposition mask and production method of vapor deposition mask
JP7391719B2 (en) * 2020-03-05 2023-12-05 株式会社ジャパンディスプレイ How to make a vapor deposition mask unit
KR102228839B1 (en) * 2020-07-20 2021-03-17 풍원정밀(주) Metal mask for organic light emitting diode deposition removing protrusion of trim line to improve process yield
KR102209465B1 (en) * 2020-07-20 2021-01-29 풍원정밀(주) Metal mask for organic light emitting diode deposition minimizing protrusion of trim line
CN112981318A (en) * 2021-02-08 2021-06-18 合肥维信诺科技有限公司 Mask and mask precision detection method
JP2022127384A (en) * 2021-02-19 2022-08-31 株式会社ジャパンディスプレイ Production method of vapor deposition mask
KR102371486B1 (en) * 2021-10-08 2022-03-07 풍원정밀(주) Fine metal mask

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4293822B2 (en) * 2003-04-10 2009-07-08 大日本印刷株式会社 Method and apparatus for laminating metal thin plate
JP2004323888A (en) * 2003-04-23 2004-11-18 Dainippon Printing Co Ltd Vapor deposition mask and vapor deposition method
JP4369199B2 (en) 2003-06-05 2009-11-18 九州日立マクセル株式会社 Vapor deposition mask and manufacturing method thereof
KR100626041B1 (en) * 2004-11-25 2006-09-20 삼성에스디아이 주식회사 Mask for depositing thin film of flat panel display and method for fabricating the same
JP4609187B2 (en) 2005-05-30 2011-01-12 凸版印刷株式会社 Manufacturing method of multi-faced metal mask
KR101837624B1 (en) 2011-05-06 2018-03-13 삼성디스플레이 주식회사 Mask frame assembly for thin film deposition and the manufacturing method thereof
JP5382259B1 (en) * 2013-01-10 2014-01-08 大日本印刷株式会社 Metal plate, method for producing metal plate, and method for producing vapor deposition mask using metal plate
JP5382257B1 (en) * 2013-01-10 2014-01-08 大日本印刷株式会社 Metal plate, method for producing metal plate, and method for producing vapor deposition mask using metal plate

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI669567B (en) * 2018-08-22 2019-08-21 鋆洤科技股份有限公司 Fine metal mask and method for making the same
TWI826677B (en) * 2019-03-28 2023-12-21 日商大日本印刷股份有限公司 Evaporation cover and manufacturing method of evaporation cover
CN110592529A (en) * 2019-10-30 2019-12-20 昆山国显光电有限公司 Mask frame
TWI757041B (en) * 2021-01-08 2022-03-01 達運精密工業股份有限公司 Mask

Also Published As

Publication number Publication date
JP2022140560A (en) 2022-09-26
JP6851820B2 (en) 2021-03-31
TWI804481B (en) 2023-06-11
JP2021095641A (en) 2021-06-24
KR102435856B1 (en) 2022-08-23
JP2018109211A (en) 2018-07-12
KR20180077075A (en) 2018-07-06
JP2023174734A (en) 2023-12-08
JP7113109B2 (en) 2022-08-04
JP7422818B2 (en) 2024-01-26

Similar Documents

Publication Publication Date Title
TW201833388A (en) Mask for vapor deposition, forming method and manufacturing method of the same preventing the mask main body from shifting away from the correct position and capable of inhibiting deformation of mask and substrate
JP4677363B2 (en) Vapor deposition mask and manufacturing method thereof
TWI699445B (en) Evaporation cover and manufacturing method thereof
JP5751810B2 (en) Metal mask manufacturing method, frame member, and manufacturing method thereof
JP4369199B2 (en) Vapor deposition mask and manufacturing method thereof
JP2013245392A (en) Vapor deposition mask and method for manufacturing the same
JP2008255449A (en) Vapor deposition mask, and method for producing the same
KR20160029032A (en) Film-forming mask and method for producing film-forming mask
JP7406719B2 (en) Vapor deposition mask and manufacturing method thereof, vapor deposition mask device and manufacturing method thereof, intermediate, vapor deposition method, and manufacturing method of organic EL display device
JP6240960B2 (en) Method for manufacturing film formation mask and film formation mask
JP2021101046A (en) Mother die for galvanoplasty
JP6599103B2 (en) Vapor deposition mask and manufacturing method thereof
TW201911622A (en) Evaporation mask which can optimize the setting of strength based on the cross sectional shape of a frame to appropriately suppress the deformation of the mask body
TW201925498A (en) Mask for evaporation and manufacturing method of the same capable of maintaining the flatness of the evaporation mask while ensuring excellent reproduction precision and evaporation precision
JP7421617B2 (en) vapor deposition mask
CN111485194A (en) Vapor deposition mask, vapor deposition mask device, method for manufacturing vapor deposition mask device, intermediate, vapor deposition method, and method for manufacturing organic E L display device
JP6193073B2 (en) Metal mask manufacturing method
JP6282466B2 (en) Metal mask for screen printing and manufacturing method thereof
JP7450076B2 (en) vapor deposition mask
TWI648420B (en) Manufacturing method of a thin metal evaporation mask
JP2023042234A (en) Metal mask
JP5591733B2 (en) Metal mask, method for manufacturing the same, and method for forming alignment mark
JP2020059878A (en) Perforated laminate member, and manufacturing method of perforated laminate member