TW201831885A - 原位控制製程的方法及設備 - Google Patents
原位控制製程的方法及設備 Download PDFInfo
- Publication number
- TW201831885A TW201831885A TW107120615A TW107120615A TW201831885A TW 201831885 A TW201831885 A TW 201831885A TW 107120615 A TW107120615 A TW 107120615A TW 107120615 A TW107120615 A TW 107120615A TW 201831885 A TW201831885 A TW 201831885A
- Authority
- TW
- Taiwan
- Prior art keywords
- data
- parameters
- sequence
- processing
- controlling
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 178
- 230000008569 process Effects 0.000 title claims abstract description 142
- 238000011065 in-situ storage Methods 0.000 title claims description 22
- 238000012545 processing Methods 0.000 claims abstract description 97
- 238000005259 measurement Methods 0.000 claims abstract description 91
- 230000003287 optical effect Effects 0.000 claims abstract description 59
- 230000004044 response Effects 0.000 claims abstract description 31
- 239000012634 fragment Substances 0.000 claims description 39
- 230000001276 controlling effect Effects 0.000 claims description 29
- 230000000875 corresponding effect Effects 0.000 claims description 24
- 238000005457 optimization Methods 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 10
- 238000001514 detection method Methods 0.000 claims description 8
- 230000002596 correlated effect Effects 0.000 claims description 7
- 238000004458 analytical method Methods 0.000 claims description 6
- 238000012544 monitoring process Methods 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 230000035484 reaction time Effects 0.000 claims 1
- 238000012546 transfer Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 16
- 230000008859 change Effects 0.000 description 12
- 238000001228 spectrum Methods 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 9
- 238000012625 in-situ measurement Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 230000006399 behavior Effects 0.000 description 2
- 238000007405 data analysis Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000011897 real-time detection Methods 0.000 description 1
- 238000010845 search algorithm Methods 0.000 description 1
- 238000012883 sequential measurement Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/89—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles
- G01N21/8901—Optical details; Scanning details
- G01N21/8903—Optical details; Scanning details using a multiple detector array
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
- G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/12—Circuits of general importance; Signal processing
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Biochemistry (AREA)
- Pathology (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Immunology (AREA)
- General Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Textile Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Drying Of Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261683215P | 2012-08-15 | 2012-08-15 | |
| US61/683,215 | 2012-08-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201831885A true TW201831885A (zh) | 2018-09-01 |
Family
ID=50685435
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102129310A TWI600895B (zh) | 2012-08-15 | 2013-08-15 | 原位控制製程的方法及設備 |
| TW107120615A TW201831885A (zh) | 2012-08-15 | 2013-08-15 | 原位控制製程的方法及設備 |
| TW106123287A TWI635269B (zh) | 2012-08-15 | 2013-08-15 | 原位控制製程的方法及設備 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102129310A TWI600895B (zh) | 2012-08-15 | 2013-08-15 | 原位控制製程的方法及設備 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106123287A TWI635269B (zh) | 2012-08-15 | 2013-08-15 | 原位控制製程的方法及設備 |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US9528946B2 (OSRAM) |
| EP (1) | EP2890951A4 (OSRAM) |
| JP (1) | JP6336982B2 (OSRAM) |
| KR (1) | KR102205682B1 (OSRAM) |
| CN (1) | CN104583712B (OSRAM) |
| TW (3) | TWI600895B (OSRAM) |
| WO (1) | WO2014027354A1 (OSRAM) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI729049B (zh) * | 2015-12-15 | 2021-06-01 | 以色列商諾發測量儀器股份有限公司 | 圖案化結構中基於拉曼光譜之測量 |
| US9792393B2 (en) * | 2016-02-08 | 2017-10-17 | Lam Research Corporation | Methods and apparatuses for etch profile optimization by reflectance spectra matching and surface kinetic model optimization |
| US10032681B2 (en) * | 2016-03-02 | 2018-07-24 | Lam Research Corporation | Etch metric sensitivity for endpoint detection |
| US11107738B2 (en) * | 2016-11-16 | 2021-08-31 | Nova Ltd. | Layer detection for high aspect ratio etch control |
| US11519869B2 (en) * | 2018-03-20 | 2022-12-06 | Kla Tencor Corporation | Methods and systems for real time measurement control |
| US10572697B2 (en) | 2018-04-06 | 2020-02-25 | Lam Research Corporation | Method of etch model calibration using optical scatterometry |
| CN112005347B (zh) | 2018-04-10 | 2025-04-04 | 朗姆研究公司 | 抗蚀剂和蚀刻建模 |
| WO2019200015A1 (en) | 2018-04-10 | 2019-10-17 | Lam Research Corporation | Optical metrology in machine learning to characterize features |
| JP7020392B2 (ja) * | 2018-12-25 | 2022-02-16 | 東芝三菱電機産業システム株式会社 | データ収集再生システム |
| US11989492B2 (en) | 2018-12-26 | 2024-05-21 | Applied Materials, Inc. | Preston matrix generator |
| JP7220573B2 (ja) * | 2019-01-24 | 2023-02-10 | 株式会社荏原製作所 | 情報処理システム、情報処理方法、プログラム及び基板処理装置 |
| US12387134B2 (en) | 2019-02-14 | 2025-08-12 | Lam Research Corporation | Data capture and transformation to support data analysis and machine learning for substrate manufacturing systems |
| WO2021140508A1 (en) * | 2020-01-06 | 2021-07-15 | Nova Measuring Instruments Ltd. | Self-supervised representation learning for interpretation of ocd data |
| TWI777357B (zh) * | 2020-01-07 | 2022-09-11 | 以色列商諾威量測設備股份有限公司 | 用於光學關鍵尺寸計量的方法和系統及機器可存取的儲存介質 |
| US11698628B2 (en) | 2020-03-16 | 2023-07-11 | Vitro Flat Glass Llc | System, method, and computer program product for optimizing a manufacturing process |
| EP4301549A4 (en) | 2021-03-05 | 2025-02-26 | Applied Materials, Inc. | CONTROLLING PROCESSING PARAMETERS DURING POLISHING OF A SUBSTRATE USING A COST FUNCTION OR EXPECTED FUTURE PARAMETER CHANGES |
| US11619594B2 (en) * | 2021-04-28 | 2023-04-04 | Applied Materials, Inc. | Multiple reflectometry for measuring etch parameters |
| DE102022129114A1 (de) * | 2021-11-05 | 2023-05-25 | Jasco Corporation | Spektrometer |
| JP2023113180A (ja) * | 2022-02-03 | 2023-08-16 | 東京エレクトロン株式会社 | データ算出方法及び基板処理装置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5081421A (en) * | 1990-05-01 | 1992-01-14 | At&T Bell Laboratories | In situ monitoring technique and apparatus for chemical/mechanical planarization endpoint detection |
| PT661279E (pt) | 1993-12-30 | 2001-06-29 | Guerbet Sa | Ligandos poliaminados complexos metalicos processo de preparacao aplicacoes em diagnostico e terapeuticas |
| US8531678B2 (en) * | 1999-07-09 | 2013-09-10 | Nova Measuring Instruments, Ltd. | Method and system for measuring patterned structures |
| US6160621A (en) * | 1999-09-30 | 2000-12-12 | Lam Research Corporation | Method and apparatus for in-situ monitoring of plasma etch and deposition processes using a pulsed broadband light source |
| IL133326A0 (en) * | 1999-12-06 | 2001-04-30 | Nova Measuring Instr Ltd | Method and system for endpoint detection |
| JP2004146782A (ja) * | 2002-08-29 | 2004-05-20 | Advanced Lcd Technologies Development Center Co Ltd | 結晶化状態のｉｎ−ｓｉｔｕモニタリング方法 |
| US6937337B2 (en) * | 2003-11-19 | 2005-08-30 | International Business Machines Corporation | Overlay target and measurement method using reference and sub-grids |
| US7526354B2 (en) * | 2006-07-10 | 2009-04-28 | Tokyo Electron Limited | Managing and using metrology data for process and equipment control |
| CN102017191B (zh) * | 2008-03-31 | 2014-05-28 | Bt成像股份有限公司 | 用于晶片成像及处理的方法和设备 |
-
2013
- 2013-08-15 JP JP2015527065A patent/JP6336982B2/ja active Active
- 2013-08-15 TW TW102129310A patent/TWI600895B/zh active
- 2013-08-15 KR KR1020157006613A patent/KR102205682B1/ko active Active
- 2013-08-15 WO PCT/IL2013/050697 patent/WO2014027354A1/en not_active Ceased
- 2013-08-15 US US14/422,190 patent/US9528946B2/en active Active
- 2013-08-15 TW TW107120615A patent/TW201831885A/zh unknown
- 2013-08-15 CN CN201380043900.8A patent/CN104583712B/zh active Active
- 2013-08-15 EP EP13879352.6A patent/EP2890951A4/en not_active Withdrawn
- 2013-08-15 TW TW106123287A patent/TWI635269B/zh active
-
2016
- 2016-12-20 US US15/385,495 patent/US9915624B2/en active Active
-
2018
- 2018-03-08 US US15/915,613 patent/US10197506B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2015528569A (ja) | 2015-09-28 |
| US9915624B2 (en) | 2018-03-13 |
| US10197506B2 (en) | 2019-02-05 |
| KR102205682B1 (ko) | 2021-01-21 |
| KR20150043478A (ko) | 2015-04-22 |
| CN104583712A (zh) | 2015-04-29 |
| JP6336982B2 (ja) | 2018-06-06 |
| TW201415003A (zh) | 2014-04-16 |
| TW201734434A (zh) | 2017-10-01 |
| EP2890951A1 (en) | 2015-07-08 |
| EP2890951A4 (en) | 2016-05-18 |
| TWI600895B (zh) | 2017-10-01 |
| CN104583712B (zh) | 2017-12-01 |
| WO2014027354A1 (en) | 2014-02-20 |
| US20150226680A1 (en) | 2015-08-13 |
| US20180195975A1 (en) | 2018-07-12 |
| TWI635269B (zh) | 2018-09-11 |
| US20170167987A1 (en) | 2017-06-15 |
| US9528946B2 (en) | 2016-12-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI635269B (zh) | 原位控制製程的方法及設備 | |
| JP7269296B2 (ja) | 方法およびエッチングシステム | |
| US10847430B2 (en) | Method of feature exaction from time-series of spectra to control endpoint of process | |
| US20240096713A1 (en) | Machine-learning in multi-step semiconductor fabrication processes | |
| CN101542280B (zh) | 用多元分析对来自半导体处理系统的计量数据进行变形 | |
| JP6019043B2 (ja) | 光学計測及びセンサ装置を用いるエッチングプロセス制御 | |
| US8892237B2 (en) | Systems and methods for fabricating semiconductor device structures using different metrology tools | |
| EP2165178A1 (en) | Method and system for use in monitoring properties of patterned structures | |
| KR102268290B1 (ko) | 반도체 가공 장치를 진단하는 진단 시스템 및 그것의 제어 방법 | |
| US20240255858A1 (en) | In situ sensor and logic for process control | |
| US20230352282A1 (en) | Autonomous operation of plasma processing tool | |
| CN116583938A (zh) | 多步骤半导体制造工艺中的机器学习 |