TW201829572A - Composition for forming thermoelectric conversion layer and production method for thermoelectric conversion layer - Google Patents

Composition for forming thermoelectric conversion layer and production method for thermoelectric conversion layer Download PDF

Info

Publication number
TW201829572A
TW201829572A TW106132483A TW106132483A TW201829572A TW 201829572 A TW201829572 A TW 201829572A TW 106132483 A TW106132483 A TW 106132483A TW 106132483 A TW106132483 A TW 106132483A TW 201829572 A TW201829572 A TW 201829572A
Authority
TW
Taiwan
Prior art keywords
thermoelectric conversion
conversion layer
composition
film
forming
Prior art date
Application number
TW106132483A
Other languages
Chinese (zh)
Inventor
長濵宅磨
加藤博和
前田真一
Original Assignee
日商日產化學工業股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日產化學工業股份有限公司 filed Critical 日商日產化學工業股份有限公司
Publication of TW201829572A publication Critical patent/TW201829572A/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G51/00Compounds of cobalt
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • H10N10/85Thermoelectric active materials
    • H10N10/851Thermoelectric active materials comprising inorganic compositions
    • H10N10/855Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • H10N10/85Thermoelectric active materials
    • H10N10/856Thermoelectric active materials comprising organic compositions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

To provide a composition for thermoelectric conversion layer formation where water serves as the dispersion medium. To produce a thermoelectric conversion layer by a coating process using a composition for thermoelectric conversion layer formation. Provided is a composition for thermoelectric conversion layer formation which comprises (A) water, (B) a cobalt-based oxide, and (C) a polysaccharide. In terms of 100 parts by mass of the composition, the total of (A) and (B) is 90 to 99.98 parts by mass, (B) is 1 to 50 parts by mass, and (C) is 0.02 to 10 parts by mass.

Description

熱電轉換層形成用組成物及熱電轉換層之製造方法Thermoelectric conversion layer forming composition and method of manufacturing thermoelectric conversion layer

[0001] 本發明係關於用以形成熱電轉換層之熱電轉換層形成用組成物及使用熱電轉換層形成用組成物之熱電轉換層之製造方法。[0001] The present invention relates to a method for producing a thermoelectric conversion layer forming composition for forming a thermoelectric conversion layer and a thermoelectric conversion layer using the composition for forming a thermoelectric conversion layer.

[0002] 由席貝克效應(Seebeck Effect)所形成之電動勢,由於與熱電轉換元件的高溫部與低溫部之溫度差成比例,為了增大溫度差,於以往的熱電轉換模組中,較多是利用塊形的熱電轉換元件。然而,塊形的熱電轉換元件,係有不易進行細微加工且模組的發電單價高之問題。因此,近年來係有人提出使用容易進行細微加工之塗佈製程之熱電轉換元件及熱電轉換模組的研究。當中,從環境保護之觀點來看,係強烈期待可開發出以水為主要分散介質之熱電轉換層形成用組成物。   [0003] 作為藉由使用水之塗佈製程所形成之熱電轉換層,於專利文獻1中,揭示有使用含有半導體微粒子及導電性高分子之水系組成物而在支撐體上形成被膜之內容。此外,於專利文獻2中,揭示有從含有金屬奈米粒子與水溶性導電性高分子之水系組成物來製造熱電轉換薄片之內容。於專利文獻3中,揭示有將共軛性導電性高分子溶解於水以製作出可撓性熱電轉換層之內容。另一方面,於專利文獻4中,揭示有使用α-松油醇作為溶劑以製作鈷系氧化物的熱電轉換層之內容。 先前技術文獻 專利文獻   [0004]   專利文獻1:日本WO2013/141065號公報   專利文獻2:日本特開2014-30010號公報   專利文獻3:日本特開2014-199838號公報   專利文獻4:日本特開2008-270410號公報[0002] The electromotive force formed by the Seebeck effect is proportional to the temperature difference between the high temperature portion and the low temperature portion of the thermoelectric conversion element, and is increased in the conventional thermoelectric conversion module in order to increase the temperature difference. It is a block-shaped thermoelectric conversion element. However, the block-shaped thermoelectric conversion element has a problem that it is difficult to perform fine processing and the unit price of the power generation of the module is high. Therefore, in recent years, studies have been made on thermoelectric conversion elements and thermoelectric conversion modules using a coating process which is easy to perform fine processing. Among them, from the viewpoint of environmental protection, it is strongly expected to develop a composition for forming a thermoelectric conversion layer containing water as a main dispersion medium. [0003] As a thermoelectric conversion layer formed by a coating process using water, Patent Document 1 discloses a method of forming a film on a support using a water-based composition containing semiconductor fine particles and a conductive polymer. Further, Patent Document 2 discloses that a thermoelectric conversion sheet is produced from a water-based composition containing metal nanoparticles and a water-soluble conductive polymer. Patent Document 3 discloses that a conjugated conductive polymer is dissolved in water to produce a flexible thermoelectric conversion layer. On the other hand, Patent Document 4 discloses a thermoelectric conversion layer in which a cobalt-based oxide is produced using α-terpineol as a solvent. CITATION LIST Patent Literature [Patent Document 1] Japanese Patent Publication No. 2014-30010 Patent Document 3: JP-A-2014-199838 Patent Document 4: JP-A-2008 Bulletin No. -270410

[發明所欲解決之課題]   [0005] 專利文獻1至專利文獻3,為使用將熱電轉換材料分散或溶解於水之熱電轉換層形成用組成物,並以塗佈製程來製作熱電轉換層之技術。然而,此等先前技術係使用耐熱性低的熱電轉換材料,於中高溫區域(300~600℃)中不具有耐熱性。   [0006] 專利文獻4,為了製作熱電轉換層而使用有機溶劑。至目前為止,中高溫區域的熱電轉換層中,並無以水作為溶劑或分散介質之熱電轉換層形成用組成物的例子。   [0007] 本發明之課題在於提供一種可適用於300~600℃的中高溫區域之以水作為分散介質之熱電轉換層形成用組成物。此外,本發明之課題在於使用熱電轉換層形成用組成物並藉由塗佈製程來製造熱電轉換層。 [用以解決課題之手段]   [0008] 本發明係為了解決上述課題而進行精心探討,結果發現到含有(A)水、(B)鈷系氧化物及(C)多醣類之熱電轉換層形成用組成物具有良好的分散性及塗佈性,此外,並發現到藉由在氧化環境下燒成由該熱電轉換層形成用組成物所製作之被膜中所含有之多醣類,可製造出不存在阻礙熱電特性之成分之熱電特性優異的熱電轉換層,因而完成本發明。   [0009] 亦即,本發明,該第1觀點為一種熱電轉換層形成用組成物,其係含有(A)水、(B)鈷系氧化物及(C)多醣類之熱電轉換層形成用組成物,相對於該組成物100質量份,(A)與(B)之合計為90~99.98質量份,(B)為1~50質量份,(C)為0.02~10質量份;   第2觀點,如第1觀點之熱電轉換層形成用組成物,其中前述多醣類為纖維素衍生物;   第3觀點,如請求項2之熱電轉換層形成用組成物,其中前述纖維素衍生物為羥丙基甲基纖維素;   第4觀點,如第1觀點至第3觀點中任一觀點之熱電轉換層形成用組成物,其中前述鈷系氧化物,為以下述一般式(1):(式中,A1 為選自由Na、K、Li、Ti、V、Cr、Mn、Fe、Ni、Cu、Zn、Pb、Sr、Ba、Al、Bi、Y及鑭族元素所組成之群組的至少一種元素,A2 為選自由Ti、V、Cr、Mn、Fe、Ni、Cu、Ag、Mo、W、Nb及Ta所組成之群組的至少一種元素,2.2≦a1≦3.6;0≦b1≦0.8;2.0≦c1≦4.5;0≦d1≦2.0;8≦e1≦10),或   以下述一般式(2):(式中,A1 為選自由Na、K、Li、Ti、V、Cr、Mn、Fe、Ni、Cu、Zn、Pb、Sr、Ba、Al、Bi、Y及鑭族元素所組成之群組的至少一種元素,A2 為選自由Ti、V、Cr、Mn、Fe、Ni、Cu、Ag、Mo、W、Nb及Ta所組成之群組的至少一種元素,0<a2≦2;0≦b2≦0.6;0<c2≦2;0≦d2≦0.6;1.0≦e2≦3.0),或是   以下述一般式(3):(式中,M1 為Sr或Pb,A1 為選自由Na、K、Li、Ti、V、Cr、Mn、Fe、Ni、Cu、Zn、Pb、Sr、Ba、Al、Bi、Y及鑭族元素所組成之群組的至少一種元素,A2 為選自由Ti、V、Cr、Mn、Fe、Ni、Cu、Ag、Mo、W、Nb及Ta所組成之群組的至少一種元素,1.8≦a3≦2.2;0≦f3≦0.4;1.8≦b3≦2.2;1.6≦c3≦2.2;0≦d3≦0.5;8≦e3≦10)所表示之化合物;   第5觀點為一種熱電轉換層之製造方法,其係包含:將如第1觀點至第4觀點中任一觀點之熱電轉換層形成用組成物塗佈於基板而形成被膜之步驟;接著為了從該被膜中去除多醣類,而在300℃以上的氧化環境中燒成該被膜之步驟;   第6觀點為一種熱電轉換層之製造方法,其係包含:將如第1觀點至第4觀點中任一觀點之熱電轉換層形成用組成物塗佈於基板而形成被膜之步驟;接著為了從該被膜中去除多醣類,而在氧化環境中藉由光照射對該被膜進行光燒成之步驟;   第7觀點為一種熱電轉換層之製造方法,其係包含:將如第1觀點至第4觀點中任一觀點之熱電轉換層形成用組成物塗佈於基板而形成被膜之步驟;為了從該被膜中去除多醣類,而在300℃以上的氧化環境中燒成該被膜之步驟;然後在氧化環境中藉由光照射對該被膜進行光燒成之步驟。 [發明之效果]   [0010] 本發明中,由於以水為主溶劑,所以可提供環境及作業環境汙染少之熱電轉換層形成用組成物。此外,藉由使用該組成物,可提供於中高溫區域中具有耐熱性,熱電特性優異且具有加工性及形狀自由度之熱電轉換層。[Problems to be Solved by the Invention] [0005] Patent Document 1 to Patent Document 3 is a composition for forming a thermoelectric conversion layer in which a thermoelectric conversion material is dispersed or dissolved in water, and a thermoelectric conversion layer is produced by a coating process. technology. However, these prior art techniques use a thermoelectric conversion material having low heat resistance and do not have heat resistance in a medium-high temperature region (300 to 600 ° C). [0006] Patent Document 4 uses an organic solvent in order to produce a thermoelectric conversion layer. In the thermoelectric conversion layer in the medium-high temperature region, there is no example of a composition for forming a thermoelectric conversion layer using water as a solvent or a dispersion medium. An object of the present invention is to provide a thermoelectric conversion layer forming composition which is applicable to a medium-high temperature region of 300 to 600 ° C and which uses water as a dispersion medium. Further, an object of the present invention is to produce a thermoelectric conversion layer by a coating process using a composition for forming a thermoelectric conversion layer. [Means for Solving the Problem] The present invention has been intensively studied to solve the above problems, and as a result, a thermoelectric conversion layer containing (A) water, (B) cobalt-based oxide, and (C) polysaccharide has been found. The composition for formation has good dispersibility and applicability, and it has been found that the polysaccharide contained in the film produced by the composition for forming the thermoelectric conversion layer can be produced by firing in an oxidizing atmosphere. The present invention has been completed in the absence of a thermoelectric conversion layer having excellent thermoelectric properties of a component which hinders thermoelectric properties. According to the present invention, the first aspect of the invention provides a thermoelectric conversion layer forming composition comprising (A) water, (B) a cobalt-based oxide, and (C) a polysaccharide-based thermoelectric conversion layer. The composition is 90 to 99.98 parts by mass in total of (A) and (B), (B) is 1 to 50 parts by mass, and (C) is 0.02 to 10 parts by mass based on 100 parts by mass of the composition. The thermoelectric conversion layer forming composition of the first aspect, wherein the polysaccharide is a cellulose derivative, and the thermoelectric conversion layer forming composition according to claim 2, wherein the cellulose derivative The composition for forming a thermoelectric conversion layer according to any one of the first aspect to the third aspect, wherein the cobalt-based oxide is represented by the following general formula (1): (wherein A 1 is a group selected from the group consisting of Na, K, Li, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Pb, Sr, Ba, Al, Bi, Y, and lanthanum elements. At least one element of the group, A 2 is at least one element selected from the group consisting of Ti, V, Cr, Mn, Fe, Ni, Cu, Ag, Mo, W, Nb, and Ta, 2.2≦a1≦3.6; 0≦b1≦0.8;2.0≦c1≦4.5;0≦d1≦2.0;8≦e1≦10), or with the following general formula (2): (wherein A 1 is a group selected from the group consisting of Na, K, Li, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Pb, Sr, Ba, Al, Bi, Y, and lanthanum elements. a group of at least one element, A 2 being at least one element selected from the group consisting of Ti, V, Cr, Mn, Fe, Ni, Cu, Ag, Mo, W, Nb, and Ta, 0 < a2 ≦ 2; 0≦b2≦0.6;0<c2≦2;0≦d2≦0.6;1.0≦e2≦3.0), or is the general formula (3) below: (wherein M 1 is Sr or Pb, and A 1 is selected from the group consisting of Na, K, Li, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Pb, Sr, Ba, Al, Bi, Y and At least one element of the group consisting of lanthanum elements, A 2 being at least one element selected from the group consisting of Ti, V, Cr, Mn, Fe, Ni, Cu, Ag, Mo, W, Nb, and Ta , 1.8≦a3≦2.2; 0≦f3≦0.4; 1.8≦b3≦2.2; 1.6≦c3≦2.2; 0≦d3≦0.5; 8≦e3≦10) the compound represented; the fifth viewpoint is a thermoelectric conversion layer The manufacturing method of the thermoelectric conversion layer forming composition according to any one of the first aspect to the fourth aspect, comprising the step of applying a thermoelectric conversion layer forming composition to a substrate to form a film; and subsequently, in order to remove the polysaccharide from the film, The method of firing the film in an oxidizing atmosphere of 300 ° C or higher; the sixth aspect is a method for producing a thermoelectric conversion layer, comprising: forming a thermoelectric conversion layer according to any one of the first aspect to the fourth aspect; a step of forming a film by coating a composition on a substrate; and then, in order to remove the polysaccharide from the film, the film is irradiated with light by irradiation in an oxidizing atmosphere. The method of producing a thermoelectric conversion layer according to any one of the first aspect to the fourth aspect, wherein the thermoelectric conversion layer forming composition is applied to a substrate to form a film. a step of firing the film in an oxidizing atmosphere at 300 ° C or higher in order to remove the polysaccharide from the film; and then subjecting the film to photo-sintering by light irradiation in an oxidizing atmosphere. [Effects of the Invention] In the present invention, since water is used as a main solvent, it is possible to provide a composition for forming a thermoelectric conversion layer which is less polluted in the environment and the working environment. Further, by using the composition, it is possible to provide a thermoelectric conversion layer which has heat resistance in a medium-high temperature region, is excellent in thermoelectric characteristics, and has processability and shape freedom.

[0012] 以下係詳細說明本發明。本發明之熱電轉換層形成用組成物,為藉由塗佈於基板並燒成而能夠形成由鈷系氧化物所構成之熱電轉換層之組成物。亦即,該組成物中,用以形成熱電轉換層之鈷系氧化物是以微粒子的狀態來分散,該組成物中所含有之水及多醣類,為用以改善鈷系氧化物的分散狀態之成分。   [0013] 熱電轉換層的基本特性,是由前述分散於熱電轉換層形成用組成物之鈷系氧化物的種類來決定。亦即,分散於本發明之熱電轉換層形成用組成物之鈷系氧化物,只要是可分散於水,則可直接使用由已知的鈷系氧化物所構成之熱電轉換材料。從其他觀點來看,100℃時的席貝克係數為50μV/K以上之鈷系氧化物亦可稱為熱電轉換材料,本發明中,可使用此等已知的鈷系氧化物作為起始原料。   [0014] 多醣類,在將本發明之熱電轉換層形成用組成物形成為熱電轉換層時,係用以接著鈷系氧化物的粒子彼此而添加。藉由添加多醣類,於熱電轉換層的成膜過程中,即使在進行前述熱電轉換層形成用組成物的乾燥後,粒子亦不會從基板中剝落,可作為熱電轉換層而存在於基板上。另一方面,不含多醣類時,當進行組成物的乾燥時,鈷系氧化物粒子容易從基板中脫落而無法存在作為熱電轉換層。   [0015] 多醣類,當多量地含有時,熱電轉換層的電阻有惡化之疑慮,但藉由在300℃以上的高溫燒成並分解,可得到良好的電導性。於燒成後的熱電轉換層中雖不存在多醣類,但由於鈷系氧化物彼此弱熔著,所以可作為層而存在。多醣類,亦具有改善鈷系氧化物微粒子往水之分散性之效果。   [0016] 此外,藉由本發明之熱電轉換層形成用組成物所得到之鈷系氧化物的熱電轉換層,該結晶性並無限定。為了得到作為熱電轉換層的良好特性,較佳為結晶者,但即使例如起始原料為非晶質,將熱電轉換層形成用組成物塗佈於基板後,藉由用以結晶化之燒成,可得到良好特性的熱電轉換層。   [0017] 此外,鈷系氧化物的起始原料,即使例如於鈷系氧化物中含有該製造過程中所殘存之碳成分,若可藉由燒成來分解碳成分,則亦可得到熱電特性良好之熱電轉換層。   [0018] 此外,同樣的,鈷系氧化物的氧原子,由於亦可在塗佈後的燒成步驟中導入,所以可使用氧原子的含量較計量化學比更少之鈷系氧化物。   [0019] 亦即,將本發明之熱電轉換層形成用組成物塗佈於基板後,若可藉由適當的燒成處理來得到作為熱電轉換層的充分特性,則作為起始原料之鈷系氧化物,亦可不具有充分的熱電轉換特性。   [0020] 此鈷系氧化物,為以下述一般式(1)、(2)或(3)所示。   一般式(1):(式中,A1 為選自由Na、K、Li、Ti、V、Cr、Mn、Fe、Ni、Cu、Zn、Pb、Sr、Ba、Al、Bi、Y及鑭族元素所組成之群組的至少一種元素,A2 為選自由Ti、V、Cr、Mn、Fe、Ni、Cu、Ag、Mo、W、Nb及Ta所組成之群組的至少一種元素,2.2≦a1≦3.6;0≦b1≦0.8;2.0≦c1≦4.5;0≦d1≦2.0;8≦e1≦10)   以一般式(1)所表示之特佳的鈷系氧化物,如第1表所示。   [0021][0022] 上述一般式(1),鑭族元素可例示出La、Ce、Pr、Nd、Sm、Eu、Gd、Dy、Ho、Er、Tm、Yb、Lu等。   [0023] 一般式(2):(式中,A1 為選自由Na、K、Li、Ti、V、Cr、Mn、Fe、Ni、Cu、Zn、Pb、Sr、Ba、Al、Bi、Y及鑭族元素所組成之群組的至少一種元素,A2 為選自由Ti、V、Cr、Mn、Fe、Ni、Cu、Ag、Mo、W、Nb及Ta所組成之群組的至少一種元素,0<a2≦2;0≦b2≦0.6;0<c2≦2;0≦d2≦0.6;1.0≦e2≦3.0)   [0024] 一般式(3):(式中,M1 為Sr或Pb,A1 為選自由Na、K、Li、Ti、V、Cr、Mn、Fe、Ni、Cu、Zn、Pb、Sr、Ba、Al、Bi、Y及鑭族元素所組成之群組的至少一種元素,A2 為選自由Ti、V、Cr、Mn、Fe、Ni、Cu、Ag、Mo、W、Nb及Ta所組成之群組的至少一種元素,1.8≦a3≦2.2;0≦f3≦0.4;1.8≦b3≦2.2;1.6≦c3≦2.2;0≦d3≦0.5;8≦e3≦10)   [0025] 本發明中,為了使鈷系氧化物分散於水,鈷系氧化物必須為粒子狀。鈷系氧化物的平均粒徑若為1nm以上100μm以下,則可容易調製均一的分散液。為1nm以下時,粒子彼此凝聚而不易分散,為100μm以上時,不僅分散性變差,亦有無法形成均一的熱電轉換層之問題。從分散液的塗佈性、熱電轉換層的熱電特性等觀點來看,該平均粒徑較佳為5μm以下,尤佳為1μm以下。在此,平均粒徑為使用Microtrac Bel公司製的Nanotrac UPA-EX並藉由動態光散射法所測定之粒徑。   [0026] 調製本發明之熱電轉換層形成用組成物時的起始原料,只要是鈷系氧化物的平均粒徑為1nm以上者即可,並無特別限定。即使起始原料的粒徑為100μm以上,亦可在與水混合後藉由濕式粉碎將粒子粉碎,而得到能夠分散於水之粒徑的鈷系氧化物。   [0027] 所謂多醣類,為藉由苷鍵使單醣分子聚合2分子以上之物質的總稱。本發明所使用之多醣類,較佳為纖維素、澱粉、直鏈澱粉(Amylose)、支鏈澱粉(Amylopectin)、肝醣(Glycogen)、幾丁質(Chitin)、洋菜糖(Agarose)、鹿角菜膠(Carrageenan)、肝素(Heparin)、玻尿酸(Hyaluronic Acid)、果膠(Pectin)、木葡聚糖(Xyloglucan)等。   [0028] 多醣類,係以改善鈷系氧化物的分散性及塗佈性之目的而添加於本發明之熱電轉換層形成用組成物。該組成物中,多醣類是以溶解或分散於水之狀態下存在。   [0029] 多醣類中的纖維素,較多為人所知者是經部分地變性之衍生物,為人所知者例如有羧甲基纖維素、羥乙基纖維素、羥乙基甲基纖維素、羥丙基纖維素、羥丙基甲基纖維素、甲基纖維素、乙基纖維素、乙基羥乙基纖維素、羧甲基乙基纖維素、硝基纖維素、乙酸纖維素等。於形成熱電轉換層時,從可形成成膜性良好且體積電阻率小之熱電轉換層來看,較佳為甲基纖維素、羥丙基甲基纖維素、羥丙基纖維素、羥乙基甲基纖維素、羥乙基纖維素,尤佳為羥丙基甲基纖維素。   [0030] 相對於本發明之熱電轉換層形成用組成物100質量份,多醣類的添加量為0.02~10質量份。愈多量地添加多醣類,鈷系氧化物粒子彼此的接著性愈良好,成膜性愈良好。另一方面,為了得到電導性良好之熱電轉換層,必須分解殘存於熱電轉換層之多醣類,從此觀點來看,多醣類較少者較佳。從上述理由來看,多醣類的添加量較佳為0.04~5質量份,尤佳為0.1~2.5質量份。   [0031] 本發明之熱電轉換層形成用組成物所含有之水,係具有用以分散鈷系氧化物之分散介質的機能。藉由在熱電轉換層形成用組成物中含有水,可使鈷系氧化物均一地分散而形成均一的熱電轉換層。   [0032] 此外,本發明中,從環境及作業環境的保護之觀點來看,係使用水作為主要的分散介質。因此,相對於本發明之熱電轉換層形成用組成物100質量份,(A)水與(B)鈷系氧化物的合計必須為90質量份以上,較佳為95質量份以上。   [0033] 本發明之熱電轉換層形成用組成物,可在不汙染環境及作業環境之範圍內添加親水性溶劑。親水性溶劑,可預先加入於水而構成分散介質。親水性溶劑,主要是以抑制發泡之目的以及改善成膜性之目的而添加。具體而言,可較佳地使用甲醇、乙醇、1-丙醇、2-丙醇、1-丁醇、2-丁醇、乙腈。   [0034] 相對於該熱電轉換層形成用組成物100質量份,水以外的分散介質,從環境及作業環境的保護之觀點來看,較佳為9.98質量份以下,尤較佳為5質量份以下。   [0035] 本發明之熱電轉換層形成用組成物,(B)鈷系氧化物與(C)多醣類係作為固體成分而存在。組成物的固體成分濃度過高時,該組成物不具有流動性,無法藉由塗佈法容易得到熱電轉換層。另一方面,固體成分濃度過低時,該組成物無法得到均一的膜。因此,相對於該組成物100質量份,(B)鈷系氧化物與(C)多醣類的合計必須為1.02~60質量份,較佳為10~30質量份,尤佳為15~25質量份。   [0036] 本發明之熱電轉換層形成用組成物的調製方法並無特別限定。可將各原料適量添加於反應容器並混合,且視需要進行濕式粉碎,而得到本發明之熱電轉換層形成用組成物。調製例,例如可將水與纖維素衍生物加入於容器,並攪拌至纖維素衍生物完全溶解為止。接著將鈷系氧化物添加於相同容器。可視需要添加用以抑制發泡之1-丙醇。然後為了均一地混合並分散,進行採用了鋯石珠粒之球磨處理,藉此可得到熱電轉換層形成用組成物。球磨處理的條件,例如在混合轉子上(轉子的轉數100rpm)進行5日,或是在砂磨機(轉數500rpm)進行4小時。鋯石珠粒,係使用網目1mm以下的篩來過濾,藉此可容易去除該組成物。   [0037] 本發明之熱電轉換層形成用組成物,可將該組成物滴下於基板上,形成該組成物的被膜後,使分散介質乾燥,可形成由鈷系氧化物所構成之熱電轉換層。然而,此狀態下由於在鈷系氧化物的粒子間存在有多醣類,故會成為電傳導性顯著惡化之熱電轉換層。為了得到電傳導性良好的熱電轉換層,必須進一步燒成至多醣類的分解溫度。此燒成,較佳是在氧化環境下、300℃以上。然而,燒成溫度過高時,具有熱電特性之鈷系氧化物會產生相變化,所以燒成溫度的上限受限於鈷系氧化物的相轉移溫度。例如,使用Ca3 Co4 O9 作為鈷系氧化物時,於860℃具有相轉移溫度,所以燒成溫度較佳為850℃以下。此外,燒成溫度的上限亦受限於所使用之基板。例如,使用樹脂製的可撓性基板時,燒成溫度較佳為450℃以下。另一方面,若使用耐熱性極高之基板,例如氧化鋁等之陶瓷基板、石英基板等,則可在600℃以上的溫度下進行燒成。   [0038] 燒成步驟,除了依據烤爐等所進行之加熱燒成之外,亦可使用紫外線、可見光、閃光等之光照射來進行光燒成(光燒結)。此外,亦可併用加熱燒成及光燒成。   光燒成,只要以可使多醣類分解之溫度,將從熱電轉換層形成用組成物所得到之被膜燒成即可。   光照射的光源,例如可列舉出汞燈、金屬鹵化物燈、氙燈、化學燈、碳弧燈等。光照射,例如可較佳地列舉出依據紅外線雷射之掃描曝光、氙放電燈等之高照度閃光曝光、紅外線燈曝光等。例如可列舉出氙脈衝光照射。   藉由光燒成,可將光照射在被膜表面而在短時間內加熱,所以具有可降低熱對基材之影響之優點。此外,光燒成,由於可在短時間內燒成,故亦有生產性高之優點。   [0039] 基板,只要是電絕緣性基板即可,並無特別限定,可使用石英基板、玻璃基板、氧化鋁等之陶瓷基板、聚醯亞胺等之樹脂製的基板、具有絕緣層之金屬基板等。   [0040] 塗佈裝置及塗膜的乾燥及燒成裝置,可使用一般所知者。具體可列舉出旋轉塗佈機、狹縫塗佈機、刮刀塗佈機、輥塗佈機、噴墨、浸泡塗佈機、網版印刷等。乾燥及燒成所使用之裝置,可列舉出加熱板、烤爐、燈加熱裝置等。此外,燒成所使用之裝置,除了加熱裝置之外,可列舉出依據紫外線、可見光、閃光等之光照射裝置。 實施例   [0041] 以下係列舉實施例來更具體記載本發明,惟本發明並不限定於以下的敘述。實施例中,試樣的調整及物性的分析所使用之裝置及條件如下所述。 [裝置]   (1)電爐(套爐)   裝置:山田電機股份有限公司製 桌上型套爐Y-2025-N   (2)旋轉塗佈機   裝置:Mikasa股份有限公司製Spin Coater 1H-D7   (3)電阻計(表面電阻值測定)   裝置:三菱化學股份有限公司製Loresta GP   探針:三菱化學股份有限公司製PSP Probe(探針間距離:1.5mm)   (4)掃描電子顯微鏡   裝置:日本電子股份有限公司製 電場放射型掃描電子顯微鏡 JSM-7400F   (5)膜厚測定   裝置:小坂研究所股份有限公司製 細微形狀測定機 Surfcoder ET4000   (6)廣角X射線繞射   裝置:Rigaku股份有限公司製X射線繞射裝置RINT Ultime+   測定條件:   X射線源;Cu、電壓;40kV、電流;40mA、STEP寬;0.04°、積算時間;0.5sec/STEP、發散狹縫;1°、發散縱向限制狹縫10mm、散射狹縫1°、感光狹縫0.3mm   (7)熱電特性評估   裝置:OzawaScience股份有限公司製 熱電特性測定裝置RZ2001i   電極:薄膜電極   (8)粒度分析計   裝置:Microtrac Bel股份有限公司製Nanotrac(註冊商標) UPA-EX   (9)光燒成   裝置:Xenon公司製 Canon Pulse光燒結裝置S-2210   [0042] [原料]   ‧鈷系氧化物:Ca3 Co4 O9 (使用:藉由Microtrac Bel股份有限公司製Nanotrac UPA-EX來測定體積粒度分布時,體積累計50%為0.46μm之Ca3 Co4 O9 )   ‧HPMC-1:羥丙基甲基纖維素(信越化學工業股份有限公司製Metolose(註冊商標)60SH-03)   ‧HPMC-2:羥丙基甲基纖維素(信越化學工業股份有限公司製Metolose 60SH-15)   ‧MC:甲基纖維素(信越化學工業股份有限公司製Metolose MC)   ‧HEC:羥乙基纖維素(Daicel FineChem股份有限公司製HEC Daicel SE400)   ‧PVA:聚乙烯醇(Japan Vam & Poval股份有限公司製AT-17)   ‧PEG:聚乙二醇(日油股份有限公司製 PEG#4000)   ‧正丙醇(純正化學股份有限公司製)   [0043] [實施例1]   將HPMC-1(0.05g、1質量份)溶解於水(3.5g、74質量份)作為多醣類。添加Ca3 Co4 O9 (1.0g、20質量份)與正丙醇(0.25g、5質量份)。然後添加φ1mm的鋯石珠粒,於混合轉子(100rpm)上進行5日的球磨處理而得到實施例組成物A。   [0044] [實施例2~4]   除了構成為第3表的組成之外,其他藉由與實施例1相同之步驟而得到實施例組成物B~D。   [0045] [比較例1]   將PVA(0.05g、1質量份)溶解於水(3.5g、74質量份)。添加Ca3 Co4 O9 (1.0g、20質量份)與正丙醇(0.25g、5質量份)。然後添加φ1mm的鋯石珠粒,於混合轉子(100rpm)上進行5日的球磨處理而得到比較例組成物a。   [0046] [比較例2]   使用PEG(0.05g、1質量份)來取代PVA,除此之外,其他藉由與比較例1相同之步驟而得到第4表的組成之比較例組成物b。   [0047] [比較例3]   除了未添加PVA之外,其他藉由與比較例1相同之步驟而得到第4表的組成之比較例組成物c。   [0048] [比較例4]   除了使用HPMC-1(0.0005g、0.01質量份)作為多醣類之外,其他藉由與實施例1相同之步驟而得到第4表的組成之比較例組成物d。   [0049] [比較例5]   除了使用HPMC-1(0.0001g、0.002質量份)作為多醣類之外,其他藉由與實施例1相同之步驟而得到第4表的組成之比較例組成物e。   [0050] [實施例5]   將實施例組成物A少量滴下於無鹼玻璃基板(25mm×25mm)上,使用旋轉塗佈法(700rpm)來形成塗膜。以100℃將所得到之塗膜乾燥5分鐘,接著於600℃燒成1小時而得到實施例層A1。實施例層A1,即使於100℃的乾燥後及600℃的燒成後,亦未觀察到破裂或剝離,可確認到均一地被覆在玻璃基板上。第1圖為依據掃描式電子顯微鏡(SEM)所拍攝之實施例層A1的表面狀態與剖面狀態之觀察結果。從SEM觀察中,可確認到實施例層A1中,Ca3 Co4 O9 微粒子層合而形成3.2μm的層。   [0051] [實施例6]   將實施例組成物A少量滴下於氧化鋁基板(10mm×15mm)上,使用旋轉塗佈法(700rpm)來形成塗膜。以100℃將所得到之塗膜乾燥5分鐘,接著於600℃燒成1小時而得到實施例層A2。實施例層A2,即使於分散介質的乾燥後及塗膜的燒成後,亦未觀察到破裂或剝離,可確認到均一地被覆在氧化鋁基板上。實施例層A2之廣角X射線繞射的測定結果如第2圖所示。第2圖中,(b)為原料粉末,(a)為具有塗膜與Ca3 Co4 O9 之繞射峰值,可確認是由鈷系氧化物所構成之熱電轉換層。   [0052] [實施例7]   關於實施例6中所得到之形成於氧化鋁基板上之實施例層A2的席貝克係數,係於加熱至100℃、350℃或600℃之實施例層A2的面內產生0~5℃的溫度差,並測量此時所產生之電壓而算出。加熱至100℃、350℃或600℃之實施例層A2的席貝克係數,如第2表所示。實施例層A2,可確認到即使於600℃的中高溫區域,亦具有優異的熱電轉換能。[0053] [實施例8]   將實施例組成物A少量滴下於無鹼玻璃基板(25mm×25mm)上,使用旋轉塗佈法(700rpm)來形成塗膜。以100℃將所得到之塗膜乾燥5分鐘,接著於600℃燒成1小時而得到實施例層A3。實施例層A3,即使於分散介質的乾燥後及塗膜的燒成後,亦未觀察到破裂或剝離,可確認到均一地被覆在玻璃基板上。此外,實施例層A3的膜厚為4.4μm,體積電阻率為148mΩcm。實施例組成物A3,係顯示出其為不對環境帶來負荷之組成物,且可形成特性良好之均一的熱電轉換層。   [0054] [實施例9~13]   除了構成為第3表的組成之外,其他藉由與實施例1相同之步驟而得到實施例組成物E~I。   [0055] [實施例14~21]   除了使用實施例組成物B~I之外,其他藉由與實施例8相同之步驟而得到實施例層B1~I1。實施例層B1~I1,即使於100℃的乾燥後及600℃的燒成後,亦皆未觀察到破裂或剝離,可確認到均一地被覆在玻璃基板上。實施例層B~D的膜厚與導電率如第5表所示。實施例組成物B~D,係顯示出其為不對環境帶來負荷之組成物,且可形成特性良好之均一的熱電轉換層。   [0056] [比較例6~10]   除了使用比較例組成物a~e之外,其他藉由與實施例5相同之步驟而嘗試製作比較例層a1~e1,但比較例層a1~e1皆於100℃的乾燥後產生破裂或剝離無法於基板上形成熱電轉換層。關於比較例層a1、b1,可考量為由於PVA或PEG未與Ca3 Co4 O9 充分分散而產生凝聚,所以無法藉由樹脂成分將Ca3 Co4 O9 粒子固定在基板上,而在乾燥後產生破裂或剝離。關於比較例層c1~e1,可考量為由於不存在足夠量的多醣類,所以將粒子彼此或粒子與基板鍵結之成分不足,而在乾燥後產生破裂或剝離。可確認到添加PVA或PEG來取代多醣類之組成物(比較例組成物a、比較例組成物b),或是多醣類的添加量不足之組成物(比較例組成物c~e),無法發揮作為熱電轉換層形成用組成物之機能。   [0057] [成膜性]   以目視來評估由實施例1~4、9~13、以及比較例1~5所製作之實施例組成物A~I及比較例組成物a~e往無鹼玻璃上之成膜性。   ○:未觀察到熱電轉換層的破裂或剝離   ×:觀察到熱電轉換層的破裂或剝離 [表面電阻值]   對於得到熱電轉換層之樣本,使用Loresta GP來測定3點的表面電阻值,並將3點的平均值設為熱電轉換層的表面電阻值。 [體積電阻率]   從表面電阻值與膜厚測定的結果中,依循下述式子來算出體積電阻率。   體積電阻率(mΩcm)=表面電阻值(Ω/□)×膜厚(μm)×10-1 [0058] [實施例22]   將HPMC-1(1.5g、1質量份)溶解於水(118.5g、79質量份)作為多醣類。添加Ca3 Co4 O9 (22.5g、15質量份)與正丙醇(7.5g、5質量份)。然後添加φ1mm的鋯石珠粒,使用砂磨機(500rpm)進行4小時的球磨處理而得到實施例組成物J。 [實施例23]   將實施例組成物J少量滴下於無鹼玻璃基板(25mm×25mm)上,使用旋轉塗佈法(700rpm)來形成塗膜。以100℃將所得到之塗膜乾燥5分鐘,接著於600℃燒成1小時而得到實施例層J1。實施例層J1,即使於100℃的乾燥後及600℃的燒成後,亦未觀察到破裂或剝離,可確認到均一地被覆在玻璃基板上。實施例層J1的成膜性、表面電阻值及體積電阻率,如第7表所示。 [實施例24]   將實施例組成物J少量滴下於無鹼玻璃基板(25mm×25mm)上,使用旋轉塗佈法(700rpm)來形成塗膜。以100℃將所得到之塗膜乾燥5分鐘,接著於350℃燒成1小時而得到實施例層J2。實施例層J2的成膜性、表面電阻值及體積電阻率,如第7表所示。   [0059][0060] [實施例25]   將實施例組成物J少量滴下於氧化鋁基板(15mm×15mm)上,使用旋轉塗佈法(700rpm)來形成塗膜。以100℃將所得到之塗膜乾燥5分鐘,接著於600℃燒成1小時而得到實施例層J3。 [實施例26]   將實施例組成物J少量滴下於氧化鋁基板(15mm×15mm)上,使用旋轉塗佈法(700rpm)來形成塗膜。以100℃將所得到之塗膜乾燥5分鐘,接著於350℃燒成1小時而得到實施例層J4。 [實施例27]   關於形成於氧化鋁基板上之實施例層J3的席貝克係數,係於加熱至100℃、350℃或600℃之實施例層J3的面內產生0~5℃的溫度差,並測量此時所產生之電壓而算出。實施例層J3的席貝克係數,如第8表所示。實施例層J3,由於具有50μV/K以上的席貝克係數,故可確認到具有熱電轉換能。關於實施例層J4,亦藉由同樣的方法來算出加熱至100℃、350℃之實施例層的席貝克係數。實施例層J4的席貝克係數,如第8表所示。實施例層J4,由於亦具有50μV/K以上的席貝克係數,故可確認到具有熱電轉換能。[0061] [實施例28]   將實施例組成物A滴下於無鹼玻璃基板(25mm×25mm)上,使用旋轉塗佈法(700rpm)來形成塗膜。以100℃將所得到之塗膜乾燥5分鐘,接著於350℃燒成1小時,最後對塗膜進行光燒結(電壓3000V、300μsec)而得到實施例層A4。實施例層A4的膜厚為0.8μm,體積電阻率為3.1×102 mΩcm。[0012] Hereinafter, the present invention will be described in detail. The thermoelectric conversion layer forming composition of the present invention is a composition of a thermoelectric conversion layer composed of a cobalt-based oxide by being applied to a substrate and fired. That is, in the composition, the cobalt-based oxide for forming the thermoelectric conversion layer is dispersed in the state of fine particles, and the water and the polysaccharide contained in the composition are used for improving the dispersion of the cobalt-based oxide. The composition of the state. [0013] The basic characteristics of the thermoelectric conversion layer are determined by the type of the cobalt-based oxide dispersed in the thermoelectric conversion layer-forming composition. In other words, the cobalt-based oxide dispersed in the thermoelectric conversion layer-forming composition of the present invention can be directly used as a thermoelectric conversion material composed of a known cobalt-based oxide as long as it can be dispersed in water. From other viewpoints, a cobalt-based oxide having a Sibeck coefficient of 50 μV/K or more at 100 ° C may also be referred to as a thermoelectric conversion material, and in the present invention, such a known cobalt-based oxide may be used as a starting material. . [0014] When the thermoelectric conversion layer forming composition of the present invention is formed into a thermoelectric conversion layer, the polysaccharide is added to the particles of the cobalt-based oxide. By adding a polysaccharide, even after the drying of the thermoelectric conversion layer forming composition, the particles are not peeled off from the substrate during the film formation of the thermoelectric conversion layer, and can be present as a thermoelectric conversion layer on the substrate. on. On the other hand, when the polysaccharide is not contained, when the composition is dried, the cobalt-based oxide particles are likely to fall off from the substrate and cannot exist as a thermoelectric conversion layer. When the polysaccharide is contained in a large amount, the electrical resistance of the thermoelectric conversion layer is deteriorated. However, by burning and decomposing at a high temperature of 300 ° C or higher, good electrical conductivity can be obtained. Although the polysaccharide is not present in the thermoelectric conversion layer after firing, since the cobalt-based oxides are weakly melted, they can exist as a layer. The polysaccharide also has an effect of improving the dispersibility of the cobalt-based oxide fine particles in water. Further, the thermoelectric conversion layer of the cobalt-based oxide obtained by the composition for forming a thermoelectric conversion layer of the present invention is not limited in crystallinity. In order to obtain good characteristics as a thermoelectric conversion layer, it is preferably crystallized. However, for example, if the starting material is amorphous, the composition for forming a thermoelectric conversion layer is applied to a substrate, and then fired by crystallization. A thermoelectric conversion layer with good characteristics can be obtained. Further, in the starting material of the cobalt-based oxide, for example, if the carbon component remaining in the production process is contained in the cobalt-based oxide, if the carbon component can be decomposed by firing, thermoelectric characteristics can be obtained. Good thermoelectric conversion layer. Further, similarly, the oxygen atom of the cobalt-based oxide can be introduced in the calcination step after coating, so that a cobalt-based oxide having a smaller oxygen content than the stoichiometric ratio can be used. [0019] In the case where the composition for forming a thermoelectric conversion layer of the present invention is applied to a substrate, if sufficient characteristics as a thermoelectric conversion layer can be obtained by a suitable baking treatment, the cobalt as a starting material is used. The oxide may not have sufficient thermoelectric conversion characteristics. [0020] The cobalt-based oxide is represented by the following general formula (1), (2) or (3). General formula (1): (wherein A 1 is a group selected from the group consisting of Na, K, Li, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Pb, Sr, Ba, Al, Bi, Y, and lanthanum elements. At least one element of the group, A 2 is at least one element selected from the group consisting of Ti, V, Cr, Mn, Fe, Ni, Cu, Ag, Mo, W, Nb, and Ta, 2.2≦a1≦3.6; 0≦b1≦0.8; 2.0≦c1≦4.5; 0≦d1≦2.0; 8≦e1≦10) A particularly preferred cobalt-based oxide represented by the general formula (1) is shown in Table 1. [0021] [0022] In the above general formula (1), the lanthanum element may be exemplified by La, Ce, Pr, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, Lu, and the like. [0023] General formula (2): (wherein A 1 is a group selected from the group consisting of Na, K, Li, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Pb, Sr, Ba, Al, Bi, Y, and lanthanum elements. a group of at least one element, A 2 being at least one element selected from the group consisting of Ti, V, Cr, Mn, Fe, Ni, Cu, Ag, Mo, W, Nb, and Ta, 0 < a2 ≦ 2; 0≦b2≦0.6; 0<c2≦2;0≦d2≦0.6; 1.0≦e2≦3.0) [0024] General formula (3): (wherein M 1 is Sr or Pb, and A 1 is selected from the group consisting of Na, K, Li, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Pb, Sr, Ba, Al, Bi, Y and At least one element of the group consisting of lanthanum elements, A 2 being at least one element selected from the group consisting of Ti, V, Cr, Mn, Fe, Ni, Cu, Ag, Mo, W, Nb, and Ta , 1.8≦a3≦2.2; 0≦f3≦0.4; 1.8≦b3≦2.2; 1.6≦c3≦2.2; 0≦d3≦0.5; 8≦e3≦10) [0025] In the present invention, in order to make the cobalt-based oxide Dispersed in water, the cobalt-based oxide must be in the form of particles. When the average particle diameter of the cobalt-based oxide is from 1 nm to 100 μm, a uniform dispersion can be easily prepared. When it is 1 nm or less, the particles are agglomerated and are not easily dispersed. When the particles are 100 μm or more, not only the dispersibility is deteriorated, but also a problem that a uniform thermoelectric conversion layer cannot be formed is obtained. The average particle diameter is preferably 5 μm or less, and particularly preferably 1 μm or less, from the viewpoints of the coatability of the dispersion and the thermoelectric characteristics of the thermoelectric conversion layer. Here, the average particle diameter is a particle diameter measured by a dynamic light scattering method using Nanotrac UPA-EX manufactured by Microtrac Bel. The starting material in the case of preparing the thermoelectric conversion layer-forming composition of the present invention is not particularly limited as long as the average particle diameter of the cobalt-based oxide is 1 nm or more. Even if the particle diameter of the starting material is 100 μm or more, the particles may be pulverized by wet pulverization after mixing with water to obtain a cobalt-based oxide which can be dispersed in the particle diameter of water. [0027] The polysaccharide is a generic term for a substance in which a monosaccharide molecule is polymerized by two or more molecules by a glycosidic bond. The polysaccharide used in the present invention is preferably cellulose, starch, Amylose, Amylopectin, Glycogen, Chitin, Agarose. Carrageenan, Heparin, Hyaluronic Acid, Pectin, Xyloglucan, and the like. [0028] The polysaccharide is added to the thermoelectric conversion layer forming composition of the present invention for the purpose of improving the dispersibility and coatability of the cobalt-based oxide. In the composition, the polysaccharide is present in a state of being dissolved or dispersed in water. [0029] Cellulose in polysaccharides, which is more well known, is a partially denatured derivative, such as carboxymethyl cellulose, hydroxyethyl cellulose, hydroxyethyl group. Cellulose, hydroxypropylcellulose, hydroxypropylmethylcellulose, methylcellulose, ethylcellulose, ethylhydroxyethylcellulose, carboxymethylethylcellulose, nitrocellulose, acetic acid Cellulose, etc. When forming the thermoelectric conversion layer, methyl cellulose, hydroxypropyl methyl cellulose, hydroxypropyl cellulose, and hydroxyethyl are preferred from the viewpoint of forming a thermoelectric conversion layer having good film formability and small volume resistivity. Methyl cellulose, hydroxyethyl cellulose, and more preferably hydroxypropyl methyl cellulose. [0030] The amount of the polysaccharide added is 0.02 to 10 parts by mass based on 100 parts by mass of the thermoelectric conversion layer-forming composition of the present invention. The more the polysaccharide is added, the better the adhesion between the cobalt-based oxide particles is, and the better the film formation property is. On the other hand, in order to obtain a thermoelectric conversion layer having good electrical conductivity, it is necessary to decompose the polysaccharide remaining in the thermoelectric conversion layer, and from this point of view, it is preferred that the polysaccharide is less. From the above reasons, the amount of the polysaccharide added is preferably from 0.04 to 5 parts by mass, particularly preferably from 0.1 to 2.5 parts by mass. The water contained in the thermoelectric conversion layer forming composition of the present invention has a function of dispersing a dispersion medium of a cobalt-based oxide. By containing water in the thermoelectric conversion layer forming composition, the cobalt-based oxide can be uniformly dispersed to form a uniform thermoelectric conversion layer. Further, in the present invention, water is used as a main dispersion medium from the viewpoint of environmental and work environment protection. Therefore, the total amount of (A) water and (B) cobalt-based oxide must be 90 parts by mass or more, and preferably 95 parts by mass or more, based on 100 parts by mass of the thermoelectric conversion layer-forming composition of the present invention. [0033] The composition for forming a thermoelectric conversion layer of the present invention can add a hydrophilic solvent within a range that does not pollute the environment and the working environment. The hydrophilic solvent may be added to water in advance to constitute a dispersion medium. The hydrophilic solvent is mainly added for the purpose of suppressing foaming and improving film formability. Specifically, methanol, ethanol, 1-propanol, 2-propanol, 1-butanol, 2-butanol, acetonitrile can be preferably used. [0034] The dispersion medium other than water is preferably 9.98 parts by mass or less, and particularly preferably 5 parts by mass, from the viewpoint of environmental and working environment protection, with respect to 100 parts by mass of the thermoelectric conversion layer-forming composition. the following. [0035] The composition for forming a thermoelectric conversion layer of the present invention, (B) a cobalt-based oxide and (C) a polysaccharide are present as a solid component. When the solid content concentration of the composition is too high, the composition does not have fluidity, and the thermoelectric conversion layer cannot be easily obtained by a coating method. On the other hand, when the solid content concentration is too low, the composition cannot obtain a uniform film. Therefore, the total of (B) the cobalt-based oxide and the (C) polysaccharide must be 1.02 to 60 parts by mass, preferably 10 to 30 parts by mass, particularly preferably 15 to 25, based on 100 parts by mass of the composition. Parts by mass. The preparation method of the thermoelectric conversion layer forming composition of the present invention is not particularly limited. Each of the raw materials may be added to the reaction container in an appropriate amount and mixed, and if necessary, wet-pulverized to obtain the thermoelectric conversion layer-forming composition of the present invention. In the preparation example, for example, water and a cellulose derivative may be added to a container and stirred until the cellulose derivative is completely dissolved. The cobalt-based oxide is then added to the same vessel. 1-propanol to suppress foaming may be added as needed. Then, in order to uniformly mix and disperse, a ball-milling treatment using zircon beads is carried out, whereby a composition for forming a thermoelectric conversion layer can be obtained. The conditions of the ball milling treatment are carried out, for example, on a mixing rotor (rotation number of the rotor: 100 rpm) for 5 days or in a sand mill (rotation number of 500 rpm) for 4 hours. The zircon beads are filtered using a sieve having a mesh size of 1 mm or less, whereby the composition can be easily removed. [0037] The thermoelectric conversion layer forming composition of the present invention can be formed by dropping the composition onto a substrate to form a film of the composition, and then drying the dispersion medium to form a thermoelectric conversion layer composed of a cobalt-based oxide. . However, in this state, since the polysaccharide is present between the particles of the cobalt-based oxide, the thermoelectric conversion layer having markedly deteriorated electrical conductivity is obtained. In order to obtain a thermoelectric conversion layer having good electrical conductivity, it is necessary to further calcine to the decomposition temperature of the polysaccharide. This firing is preferably at 300 ° C or higher in an oxidizing atmosphere. However, when the baking temperature is too high, the cobalt-based oxide having thermoelectric properties undergoes a phase change, so the upper limit of the firing temperature is limited by the phase transition temperature of the cobalt-based oxide. For example, when Ca 3 Co 4 O 9 is used as the cobalt-based oxide, the phase transition temperature is obtained at 860 ° C. Therefore, the firing temperature is preferably 850 ° C or lower. In addition, the upper limit of the firing temperature is also limited by the substrate used. For example, when a flexible substrate made of a resin is used, the firing temperature is preferably 450 ° C or lower. On the other hand, when a substrate having extremely high heat resistance, for example, a ceramic substrate such as alumina or a quartz substrate, is used, it can be fired at a temperature of 600 ° C or higher. [0038] In the firing step, in addition to heating and baking according to an oven or the like, photo-baking (photo-sintering) may be performed using light irradiation such as ultraviolet light, visible light, or flash. Further, it is also possible to use heat baking and light baking in combination. In the photo-baking, the film obtained by forming the composition for thermoelectric conversion layer formation may be baked at a temperature at which the polysaccharide can be decomposed. Examples of the light source for light irradiation include a mercury lamp, a metal halide lamp, a xenon lamp, a chemical lamp, a carbon arc lamp, and the like. For the light irradiation, for example, a high-illumination flash exposure such as a scanning exposure by an infrared laser, a xenon discharge lamp, or the like, an infrared lamp exposure, or the like can be preferably exemplified. For example, krypton pulsed light irradiation is mentioned. Since the light is irradiated to the surface of the film and heated in a short time, there is an advantage that the influence of heat on the substrate can be reduced. Further, since the light is fired, since it can be fired in a short time, it has the advantage of high productivity. The substrate is not particularly limited as long as it is an electrically insulating substrate, and a quartz substrate, a glass substrate, a ceramic substrate such as alumina, a resin substrate such as polyimide, or a metal having an insulating layer can be used. Substrate, etc. [0040] A drying device and a coating film drying and baking device can be generally used. Specific examples thereof include a spin coater, a slit coater, a knife coater, a roll coater, an inkjet, a dip coater, and screen printing. Examples of the apparatus used for drying and baking include a heating plate, an oven, a lamp heating device, and the like. Further, in addition to the heating device, the device used for firing may be a light irradiation device such as ultraviolet light, visible light, or glitter. EXAMPLES The present invention will be more specifically described by the following examples, but the present invention is not limited to the following description. In the examples, the apparatus and conditions used for the adjustment of the sample and the analysis of the physical properties are as follows. [Installation] (1) Electric furnace (sleeve furnace) Device: Yamada Electric Co., Ltd. tabletop furnace Y-2025-N (2) Rotary coating machine: Spin Coater 1H-D7 by Mikasa Co., Ltd. (3 ) Resistivity meter (measurement of surface resistance) Device: Loresta GP manufactured by Mitsubishi Chemical Corporation Co., Ltd. Probe: PSP Probe manufactured by Mitsubishi Chemical Corporation Co., Ltd. (distance between probes: 1.5 mm) (4) Scanning electron microscope device: Japan Electronics Co., Ltd. Co., Ltd. Electric Field Radiation Scanning Electron Microscope JSM-7400F (5) Film Thickness Measuring Device: Fine Shape Measuring Machine manufactured by Otaru Research Institute Co., Ltd. Surfcoder ET4000 (6) Wide-angle X-ray diffraction device: X-ray manufactured by Rigaku Co., Ltd. Diffraction device RINT Ultime+ Measurement conditions: X-ray source; Cu, voltage; 40kV, current; 40mA, STEP width; 0.04°, integrated time; 0.5sec/STEP, divergence slit; 1°, divergent longitudinal limit slit 10mm, Scattering slit 1°, photosensitive slit 0.3 mm (7) Thermoelectric characteristics evaluation device: Thermoelectric characteristics measuring device RZ2001i manufactured by Ozawa Science Co., Ltd. Electrode: Thin film electrode (8) Particle size analyzer device Nanotrac Microtrac Bel Co. Ltd. (registered trademark) UPA-EX (9) baking the optical apparatus: Xenon Corporation Canon Pulse light sintering apparatus S-2210 [0042] [feed] ‧ per-cobalt oxides: Ca 3 Co 4 O 9 (Use: Ca 3 Co 4 O 9 with a volume cumulative 50% of 0.46 μm when the volume particle size distribution was measured by Nanotrac UPA-EX manufactured by Microtrac Bel Co., Ltd.) ‧ HPMC-1: Hydroxypropyl methylcellulose (Metolose (registered trademark) 60SH-03 manufactured by Shin-Etsu Chemical Co., Ltd.) ‧HPMC-2: Hydroxypropylmethylcellulose (Metolose 60SH-15 manufactured by Shin-Etsu Chemical Co., Ltd.) ‧MC: Methylcellulose ( Meitolose MC manufactured by Shin-Etsu Chemical Co., Ltd. ‧HEC: Hydroxyethyl cellulose (HEC Daicel SE400 manufactured by Daicel FineChem Co., Ltd.) ‧PVA: Polyvinyl alcohol (AT-17 manufactured by Japan Vam & Poval Co., Ltd.) ‧PEG : Polyethylene Glycol (PEG #4000, manufactured by Nippon Oil Co., Ltd.) ‧ n-Propanol (manufactured by Junsei Chemical Co., Ltd.) [Example 1] HPMC-1 (0.05 g, 1 part by mass) was dissolved in Water (3.5 g, 74 parts by mass) was used as the polysaccharide. Ca 3 Co 4 O 9 (1.0 g, 20 parts by mass) and n-propanol (0.25 g, 5 parts by mass) were added. Then, zircon beads having a diameter of 1 mm were added, and ball milling treatment was performed on a mixing rotor (100 rpm) for 5 days to obtain an example composition A. [Examples 2 to 4] The composition of Examples B to D was obtained by the same procedure as in Example 1 except that the composition of the third table was constituted. [Comparative Example 1] PVA (0.05 g, 1 part by mass) was dissolved in water (3.5 g, 74 parts by mass). Ca 3 Co 4 O 9 (1.0 g, 20 parts by mass) and n-propanol (0.25 g, 5 parts by mass) were added. Then, zircon beads having a diameter of 1 mm were added, and ball milling treatment was performed on a mixing rotor (100 rpm) for 5 days to obtain a comparative example composition a. [Comparative Example 2] A comparative example composition of the composition of the fourth table was obtained by the same procedure as in Comparative Example 1, except that PEG (0.05 g, 1 part by mass) was used instead of PVA. . [Comparative Example 3] A comparative example composition c of the composition of the fourth table was obtained by the same procedure as in Comparative Example 1, except that PVA was not added. [Comparative Example 4] A comparative example composition having the composition of the fourth table was obtained by the same procedure as in Example 1 except that HPMC-1 (0.0005 g, 0.01 parts by mass) was used as the polysaccharide. d. [Comparative Example 5] A comparative example composition having the composition of the fourth table was obtained by the same procedure as in Example 1 except that HPMC-1 (0.0001 g, 0.002 parts by mass) was used as the polysaccharide. e. [Example 5] A small amount of the example composition A was dropped on an alkali-free glass substrate (25 mm × 25 mm), and a coating film was formed by a spin coating method (700 rpm). The obtained coating film was dried at 100 ° C for 5 minutes, and then fired at 600 ° C for 1 hour to obtain an example layer A1. In the example layer A1, even after drying at 100 ° C and after firing at 600 ° C, no cracking or peeling was observed, and it was confirmed that the layer A1 was uniformly coated on the glass substrate. Fig. 1 is a view showing the observation of the surface state and the cross-sectional state of the layer A1 of the example according to the scanning electron microscope (SEM). From the SEM observation, it was confirmed that in the example layer A1, the Ca 3 Co 4 O 9 fine particles were laminated to form a 3.2 μm layer. [Example 6] A small amount of the example composition A was dropped on an alumina substrate (10 mm × 15 mm), and a coating film was formed by a spin coating method (700 rpm). The obtained coating film was dried at 100 ° C for 5 minutes, and then fired at 600 ° C for 1 hour to obtain an example layer A2. In the example layer A2, even after drying of the dispersion medium and after firing of the coating film, no cracking or peeling was observed, and it was confirmed that the layer A2 was uniformly coated on the alumina substrate. The measurement result of the wide-angle X-ray diffraction of the example layer A2 is shown in Fig. 2. In Fig. 2, (b) is a raw material powder, and (a) is a thermoelectric conversion layer composed of a cobalt-based oxide, which has a diffraction peak of a coating film and Ca 3 Co 4 O 9 . [Example 7] The Sibeck coefficient of the example layer A2 formed on the alumina substrate obtained in Example 6 was applied to the layer A2 of the example layer heated to 100 ° C, 350 ° C or 600 ° C. A temperature difference of 0 to 5 ° C was generated in the plane, and the voltage generated at this time was measured and calculated. The Sibeck coefficient of Example Layer A2 heated to 100 ° C, 350 ° C or 600 ° C is shown in Table 2. In the example layer A2, it was confirmed that the thermoelectric conversion energy was excellent even in a medium-high temperature region of 600 °C. [Example 8] A small amount of the example composition A was dropped on an alkali-free glass substrate (25 mm × 25 mm), and a coating film was formed by a spin coating method (700 rpm). The obtained coating film was dried at 100 ° C for 5 minutes, and then fired at 600 ° C for 1 hour to obtain Example Layer A3. In the example layer A3, even after drying of the dispersion medium and after baking of the coating film, no cracking or peeling was observed, and it was confirmed that the layer A3 was uniformly coated on the glass substrate. Further, the film thickness of the example layer A3 was 4.4 μm, and the volume resistivity was 148 m Ω cm. The composition A3 of the embodiment shows that it is a composition which does not load the environment, and can form a uniform thermoelectric conversion layer having good characteristics. [Examples 9 to 13] The composition of Examples E to I was obtained by the same procedure as in Example 1 except that the composition was the same as that of the third table. [Examples 14 to 21] The example layers B1 to I1 were obtained by the same procedures as those in Example 8 except that the example compositions B to I were used. In the example layers B1 to I1, even after drying at 100 ° C and after firing at 600 ° C, no cracking or peeling was observed, and it was confirmed that the layers were uniformly coated on the glass substrate. The film thickness and conductivity of the examples B to D are shown in Table 5. The compositions B to D of the examples show that they are compositions which do not impose a load on the environment, and can form a uniform thermoelectric conversion layer having good characteristics. [Comparative Examples 6 to 10] In addition to the use of the comparative example compositions a to e, the comparison of the example layers a1 to e1 was attempted by the same procedure as in the example 5, but the comparative layers a1 to e1 were Cracking or peeling after drying at 100 ° C cannot form a thermoelectric conversion layer on the substrate. With respect to the comparative layers a1 and b1, it is considered that since PVA or PEG is not sufficiently dispersed with Ca 3 Co 4 O 9 to cause aggregation, it is impossible to fix the Ca 3 Co 4 O 9 particles on the substrate by the resin component. Cracking or peeling occurs after drying. Regarding the comparative example layers c1 to e1, it is considered that since a sufficient amount of the polysaccharide is not present, the components in which the particles or the particles are bonded to the substrate are insufficient, and cracking or peeling occurs after drying. It was confirmed that PVA or PEG was added instead of the composition of the polysaccharide (Comparative Example a, Comparative Example b), or the composition in which the amount of the polysaccharide was insufficient (Comparative Example c~e) It is impossible to function as a composition for forming a thermoelectric conversion layer. [Film Formability] The examples A to I and the comparative examples a to e prepared in Examples 1 to 4, 9 to 13, and Comparative Examples 1 to 5 were visually evaluated to be alkali-free. Film formation on glass. ○: No cracking or peeling of the thermoelectric conversion layer was observed. ×: Cracking or peeling of the thermoelectric conversion layer was observed. [Surface resistance value] For the sample to obtain the thermoelectric conversion layer, the surface resistance value at 3 points was measured using the Loresta GP, and The average value of the three points is set to the surface resistance value of the thermoelectric conversion layer. [Volume Resistivity] From the results of the surface resistance value and the film thickness measurement, the volume resistivity was calculated according to the following formula. Volume resistivity (mΩcm) = surface resistance value (Ω / □) × film thickness (μm) × 10 -1 [Example 22] HPMC-1 (1.5 g, 1 part by mass) was dissolved in water (118.5 g, 79 parts by mass) as a polysaccharide. Ca 3 Co 4 O 9 (22.5 g, 15 parts by mass) and n-propanol (7.5 g, 5 parts by mass) were added. Then, zircon beads of φ 1 mm were added, and ball milling treatment was carried out for 4 hours using a sand mill (500 rpm) to obtain an example composition J. [Example 23] A small amount of Example Composition J was dropped on an alkali-free glass substrate (25 mm × 25 mm), and a coating film was formed by a spin coating method (700 rpm). The obtained coating film was dried at 100 ° C for 5 minutes, and then fired at 600 ° C for 1 hour to obtain an example layer J1. In the example layer J1, even after drying at 100 ° C and after firing at 600 ° C, no cracking or peeling was observed, and it was confirmed that it was uniformly coated on the glass substrate. The film formability, surface resistance value and volume resistivity of Example Layer J1 are shown in Table 7. [Example 24] A small amount of the example composition J was dropped on an alkali-free glass substrate (25 mm × 25 mm), and a coating film was formed by a spin coating method (700 rpm). The obtained coating film was dried at 100 ° C for 5 minutes, and then fired at 350 ° C for 1 hour to obtain an example layer J2. The film formability, surface resistance value and volume resistivity of Example Layer J2 are shown in Table 7. [0059] [Example 25] A small amount of the example composition J was dropped on an alumina substrate (15 mm × 15 mm), and a coating film was formed by a spin coating method (700 rpm). The obtained coating film was dried at 100 ° C for 5 minutes, and then fired at 600 ° C for 1 hour to obtain an example layer J3. [Example 26] A small amount of Example Composition J was dropped on an alumina substrate (15 mm × 15 mm), and a coating film was formed by a spin coating method (700 rpm). The obtained coating film was dried at 100 ° C for 5 minutes, and then fired at 350 ° C for 1 hour to obtain an example layer J4. [Example 27] The Sibeck coefficient of the example layer J3 formed on the alumina substrate was caused to have a temperature difference of 0 to 5 ° C in the plane of the example layer J3 heated to 100 ° C, 350 ° C or 600 ° C. And calculate the voltage generated at this time and calculate it. The Sibeck coefficient of the embodiment layer J3 is as shown in the eighth table. In the example layer J3, since it has a Schiebeck coefficient of 50 μV/K or more, it was confirmed that it has thermoelectric conversion energy. With respect to the example layer J4, the Sibeck coefficient of the example layer heated to 100 ° C and 350 ° C was also calculated by the same method. The Sibeck coefficient of the embodiment layer J4 is as shown in the eighth table. In the example layer J4, since the Schiebeck coefficient of 50 μV/K or more was also obtained, it was confirmed that the thermoelectric conversion energy was obtained. [Example 28] The composition of Example A was dropped on an alkali-free glass substrate (25 mm × 25 mm), and a coating film was formed by a spin coating method (700 rpm). The obtained coating film was dried at 100 ° C for 5 minutes, and then fired at 350 ° C for 1 hour. Finally, the coating film was subjected to photo sintering (voltage: 3000 V, 300 μsec) to obtain Example Layer A4. The film thickness of the example layer A4 was 0.8 μm, and the volume resistivity was 3.1 × 10 2 m Ω cm.

[0011]   第1圖為依據掃描式電子顯微鏡所拍攝之熱電轉換層A1的表面形狀與剖面形狀之觀察影像。   第2圖(a)為氧化鋁基板上之實施例層A2之X射線繞射圖[□為氧化鋁基板之繞射峰值],第2圖(b)為原料所使用之Ca3 Co4 O9 粉末之X射線繞射圖[Ca3 Co4 O9 ,於第2圖中表記為Co349]。[0011] Fig. 1 is an observation image of the surface shape and the cross-sectional shape of the thermoelectric conversion layer A1 taken by a scanning electron microscope. Fig. 2(a) is an X-ray diffraction pattern of the embodiment layer A2 on the alumina substrate [□ is a diffraction peak of the alumina substrate], and Fig. 2(b) is a Ca 3 Co 4 O used as a raw material. 9 X-ray diffraction pattern of powder [Ca 3 Co 4 O 9 , denoted as Co349 in Figure 2].

Claims (7)

一種熱電轉換層形成用組成物,其係含有(A)水、(B)鈷系氧化物及(C)多醣類之熱電轉換層形成用組成物,   相對於該組成物100質量份,(A)與(B)之合計為90~99.98質量份,(B)為1~50質量份,(C)為0.02~10質量份。A composition for forming a thermoelectric conversion layer, which comprises a composition for forming a thermoelectric conversion layer of (A) water, (B) a cobalt-based oxide, and (C) a polysaccharide, and is 100 parts by mass based on the composition ( The total of A) and (B) is 90 to 99.98 parts by mass, (B) is 1 to 50 parts by mass, and (C) is 0.02 to 10 parts by mass. 如請求項1之熱電轉換層形成用組成物,其中前述(C)多醣類為纖維素衍生物。The thermoelectric conversion layer forming composition according to claim 1, wherein the (C) polysaccharide is a cellulose derivative. 如請求項2之熱電轉換層形成用組成物,其中前述纖維素衍生物為羥丙基甲基纖維素。The thermoelectric conversion layer forming composition according to claim 2, wherein the cellulose derivative is hydroxypropylmethylcellulose. 如請求項1至3中任一項之熱電轉換層形成用組成物,其中前述(B)鈷系氧化物,為以下述一般式(1):(式中,A1 為選自由Na、K、Li、Ti、V、Cr、Mn、Fe、Ni、Cu、Zn、Pb、Sr、Ba、Al、Bi、Y及鑭族元素所組成之群組的至少一種元素,A2 為選自由Ti、V、Cr、Mn、Fe、Ni、Cu、Ag、Mo、W、Nb及Ta所組成之群組的至少一種元素,2.2≦a1≦3.6;0≦b1≦0.8;2.0≦c1≦4.5;0≦d1≦2.0;8≦e1≦10),或   以下述一般式(2):(式中,A1 為選自由Na、K、Li、Ti、V、Cr、Mn、Fe、Ni、Cu、Zn、Pb、Sr、Ba、Al、Bi、Y及鑭族元素所組成之群組的至少一種元素,A2 為選自由Ti、V、Cr、Mn、Fe、Ni、Cu、Ag、Mo、W、Nb及Ta所組成之群組的至少一種元素,0<a2≦2;0≦b2≦0.6;0<c2≦2;0≦d2≦0.6;1.0≦e2≦3.0),或是   以下述一般式(3):(式中,M1 為Sr或Pb,A1 為選自由Na、K、Li、Ti、V、Cr、Mn、Fe、Ni、Cu、Zn、Pb、Sr、Ba、Al、Bi、Y及鑭族元素所組成之群組的至少一種元素,A2 為選自由Ti、V、Cr、Mn、Fe、Ni、Cu、Ag、Mo、W、Nb及Ta所組成之群組的至少一種元素,1.8≦a3≦2.2;0≦f3≦0.4;1.8≦b3≦2.2;1.6≦c3≦2.2;0≦d3≦0.5;8≦e3≦10)所表示之化合物。The thermoelectric conversion layer forming composition according to any one of claims 1 to 3, wherein the (B) cobalt-based oxide is represented by the following general formula (1): (wherein A 1 is a group selected from the group consisting of Na, K, Li, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Pb, Sr, Ba, Al, Bi, Y, and lanthanum elements. At least one element of the group, A 2 is at least one element selected from the group consisting of Ti, V, Cr, Mn, Fe, Ni, Cu, Ag, Mo, W, Nb, and Ta, 2.2≦a1≦3.6; 0≦b1≦0.8;2.0≦c1≦4.5;0≦d1≦2.0;8≦e1≦10), or with the following general formula (2): (wherein A 1 is a group selected from the group consisting of Na, K, Li, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Pb, Sr, Ba, Al, Bi, Y, and lanthanum elements. a group of at least one element, A 2 being at least one element selected from the group consisting of Ti, V, Cr, Mn, Fe, Ni, Cu, Ag, Mo, W, Nb, and Ta, 0 < a2 ≦ 2; 0≦b2≦0.6;0<c2≦2;0≦d2≦0.6;1.0≦e2≦3.0), or is the general formula (3) below: (wherein M 1 is Sr or Pb, and A 1 is selected from the group consisting of Na, K, Li, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Pb, Sr, Ba, Al, Bi, Y and At least one element of the group consisting of lanthanum elements, A 2 being at least one element selected from the group consisting of Ti, V, Cr, Mn, Fe, Ni, Cu, Ag, Mo, W, Nb, and Ta , 1.8≦a3≦2.2; 0≦f3≦0.4; 1.8≦b3≦2.2; 1.6≦c3≦2.2; 0≦d3≦0.5; 8≦e3≦10) the compound represented. 一種熱電轉換層之製造方法,其係包含:   將如請求項1至4中任一項之熱電轉換層形成用組成物塗佈於基板而形成被膜之步驟;接著為了從該被膜中去除多醣類,而在300℃以上的氧化環境中燒成該被膜之步驟。A method of producing a thermoelectric conversion layer, comprising: a step of applying a composition for forming a thermoelectric conversion layer according to any one of claims 1 to 4 to a substrate to form a film; and then removing the polysaccharide from the film And the step of firing the film in an oxidizing atmosphere of 300 ° C or higher. 一種熱電轉換層之製造方法,其係包含:   將如請求項1至4中任一項之熱電轉換層形成用組成物塗佈於基板而形成被膜之步驟;接著為了從該被膜中去除多醣類,而在氧化環境中藉由光照射對該被膜進行光燒成之步驟。A method of producing a thermoelectric conversion layer, comprising: a step of applying a composition for forming a thermoelectric conversion layer according to any one of claims 1 to 4 to a substrate to form a film; and then removing the polysaccharide from the film And the step of photo-firing the film by light irradiation in an oxidizing environment. 一種熱電轉換層之製造方法,其係包含:   將如請求項1至4中任一項之熱電轉換層形成用組成物塗佈於基板而形成被膜之步驟;為了從該被膜中去除多醣類,而在300℃以上的氧化環境中燒成該被膜之步驟;然後在氧化環境中藉由光照射對該被膜進行光燒成之步驟。A method of producing a thermoelectric conversion layer, comprising: a step of applying a composition for forming a thermoelectric conversion layer according to any one of claims 1 to 4 to a substrate to form a film; and removing a polysaccharide from the film And the step of firing the film in an oxidizing atmosphere of 300 ° C or higher; and then photo-firing the film by light irradiation in an oxidizing atmosphere.
TW106132483A 2016-09-21 2017-09-21 Composition for forming thermoelectric conversion layer and production method for thermoelectric conversion layer TW201829572A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-184454 2016-09-21
JP2016184454 2016-09-21

Publications (1)

Publication Number Publication Date
TW201829572A true TW201829572A (en) 2018-08-16

Family

ID=61690509

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106132483A TW201829572A (en) 2016-09-21 2017-09-21 Composition for forming thermoelectric conversion layer and production method for thermoelectric conversion layer

Country Status (4)

Country Link
JP (1) JPWO2018056368A1 (en)
CN (1) CN109716546A (en)
TW (1) TW201829572A (en)
WO (1) WO2018056368A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019181960A1 (en) * 2018-03-20 2019-09-26 日産化学株式会社 Composition for forming thermoelectric conversion layer and method for producing thermoelectric conversion layer

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3565503B2 (en) * 2000-09-07 2004-09-15 大研化学工業株式会社 Oxide thermoelectric conversion material
JP4164652B2 (en) * 2001-11-29 2008-10-15 エスケー化研株式会社 Thermoelectric conversion material and method for producing the same
JP4139884B2 (en) * 2002-03-25 2008-08-27 独立行政法人産業技術総合研究所 Method for producing metal oxide sintered body
JP2006294960A (en) * 2005-04-13 2006-10-26 Sumitomo Chemical Co Ltd Thermoelectric conversion material
US8044292B2 (en) * 2006-10-13 2011-10-25 Toyota Motor Engineering & Manufacturing North America, Inc. Homogeneous thermoelectric nanocomposite using core-shell nanoparticles
JP4867618B2 (en) * 2006-11-28 2012-02-01 住友化学株式会社 Thermoelectric conversion material
CN102443290A (en) * 2010-09-30 2012-05-09 三菱综合材料株式会社 Transparent conductive film composition for solar cell and transparent conductive film thereof
EP2830106B1 (en) * 2012-03-21 2018-05-02 LINTEC Corporation Thermoelectric conversion material and method for manufacturing same
CN105359286B (en) * 2013-07-03 2017-08-08 富士胶片株式会社 The manufacture method and thermoelectric conversion element of thermoelectric conversion layer

Also Published As

Publication number Publication date
JPWO2018056368A1 (en) 2019-07-11
CN109716546A (en) 2019-05-03
WO2018056368A1 (en) 2018-03-29

Similar Documents

Publication Publication Date Title
TW201308353A (en) Silver-coated copper powder and method for producing same, silver-coated copper powder-containing conductive paste, conductive adhesive agent, conductive film, and electric circuit
JP2017122043A (en) Manufacturing method of ruthenium oxide powder
KR101777342B1 (en) A method to prepare a metallic nanoparticle dispersion
WO2003038838A1 (en) Ag COMPOUND PASTE
JP2016164864A (en) Ag PASTE AND Ag POWDER FOR THE Ag PASTE
JP2008243946A (en) Conductive substrate and its manufacturing method
WO2018180959A1 (en) Ruthenium oxide powder, composition for thick film resistor, paste for thick film resistor, and thick film resistor
TWI464751B (en) Conducting particles, process of making thereof, metallic paste, and electrode
TW201602272A (en) Conductive composition
JP2013053030A (en) Plate-like ruthenium oxide powder, method for producing the same, and thick film resistor composition using the same
JP5326647B2 (en) Method for producing composition for forming electrode of solar cell
JP2006299385A (en) Platinum powder, production method therefor and platinum paste for piezoelectric ceramic material
TW201829572A (en) Composition for forming thermoelectric conversion layer and production method for thermoelectric conversion layer
JP2005019028A (en) Metal colloid liquid, and conductive ink using it
JP4834848B2 (en) Copper powder for low-temperature firing or copper powder for conductive paste
WO2019181960A1 (en) Composition for forming thermoelectric conversion layer and method for producing thermoelectric conversion layer
JP5053902B2 (en) Method for producing silver ultrafine particles
WO2022059704A1 (en) Electrode or wiring, electrode pair, and method for manufacturing electrode or wiring
JP5151230B2 (en) Composition for forming electrode of solar cell, method for forming the electrode, and method for producing solar cell using the electrode obtained by the forming method
CN106575537A (en) Solar cells with copper electrodes
KR20110026305A (en) Electrode composition for solar cell and manufacturing method of electrode for solar cell using the same
JP4081387B2 (en) Silver powder for conductive material of ceramic multilayer substrate and manufacturing method thereof
TW201920001A (en) Composition for thick film resistor, thick film resistance paste, and thick film resistor
JP2019165186A (en) Thermoelectric conversion layer and manufacturing method of the same
JP7231319B2 (en) Conductive paste composition, method for producing conductive film using same, and multilayer capacitor