TW201820371A - Magnetron element and magnetron sputtering apparatus - Google Patents

Abstract

Disclosed are a magnetron element and a magnetron sputtering apparatus. The magnetron element comprises a closed magnetron and a non-closed magnetron. A closed plasma path is formed between an inner magnetic pole and an outer magnetic pole of the closed magnetron. A non-closed plasma path is formed between a first magnetic pole and a second magnetic pole of the non-closed magnetron. The closed plasma path and the non-closed plasma path are at least correspondingly located in a radius region from a target centre to a target edge; and the sum of the effective extension length of the closed plasma path in a target radial direction and the effective extension length of the non-closed plasma path in the target radial direction is greater than or equal to the radius of the target. The magnetron element can achieve whole target corrosion of the target, and avoid the presence of particles in a central region of the target, thereby improving the utilization rate of the target, further improving the ionization rate of a metal target during a sputtering process, and at the same time, improving the filling effect of through holes on a wafer.

Description

Magnetic control element and magnetic control sputtering device

The invention relates to the technical field of magnetron sputtering, in particular to a magnetron element and a magnetron sputtering device.

Sputtering refers to the phenomenon that charged particles (such as argon ions) bombard a solid surface, causing various particles on the surface, such as atoms, molecules or clusters, to escape from the surface of the object. In the magnetron sputtering device, a plasma is generated in the chamber, and the positive ions of the plasma are attracted by the negative electricity of the cathode, bombard the target in the chamber, knock out the atoms of the target, and deposit on the substrate. In the case of non-reactive sputtering, the gas is an inert gas, such as argon. In reactive sputtering, a reactive gas and an inert gas are used together. Magnetron sputtering devices are widely used in the fields of integrated circuits, liquid crystal displays, thin-film solar and LED.

In order to improve the effect of sputtering, a magnet is used near the target, which can force the electrons in the plasma to move in a certain orbit, increasing the time of electron movement, thereby increasing the chance of electrons colliding with the gas to be ionized. A high-density plasma is obtained, providing a high deposition rate. At the same time, the orbit of the electrons controlled by the magnet will affect the erosion rate of the target at different positions and affect the life of the target. It also affects the uniformity of film deposition.

In order to achieve full target corrosion of the target during the sputtering process, as shown in FIGS. 1a to 1c, in the first prior art, the magnetron 6 adopts a kidney-shaped nested structure as shown in FIG. 1a. The magnetron 6 is fixedly mounted on the magnetron mounting plate 9. The magnetron mounting plate 9 is fixed on the driving plate 8. The driving plate 8 and the bracket 10 are movably connected through the shaft 14. The driving plate 8 can rotate around the shaft 14. A spring 5 is also connected between the bracket 10 and the driving plate 8; the bracket 10 is movably connected to the driving shaft 4, and the bracket 10 can rotate around the driving shaft 4. The drive shaft 4 corresponds to the center of the target. At the beginning of the magnetron sputtering process, the bracket 10 drives the drive plate 8 and the magnetron 6 to rotate around the drive shaft 4. For example, the drive shaft 4 rotates counterclockwise at a certain speed. When the speed is high enough, the centrifugal force of the magnetron 6 exceeds The spring force of the spring 5 drives the drive plate 8 and its fixed magnetron mounting plate 9 to the outside around the shaft 14 on the bracket 10 (as shown in Fig. 1b), so that the magnetron 6 is correspondingly located on the edge region of the target 7 At this time, under the action of the magnetron 6, the edge region of the target material 7 is plasma-etched. On the contrary, when the speed is very low, the drive shaft 4 still rotates counterclockwise, but the low speed makes the centrifugal force of the magnetron 6 smaller than the spring force of the spring 5. The spring 5 surrounds the driving plate 8 and its fixed magnetron mounting plate 9 The shaft 14 on the bracket 10 is pulled inward (as shown in FIG. 1 c), so that the magnetron 6 is pulled back to the position corresponding to the center region of the target 7. At this time, under the action of the magnetron 6, The plasma etches the center region of the target 7. Throughout the entire manufacturing process, the magnetron 6 is controlled to change position between the edge region and the center region of the corresponding target 7 by changing the rotation speed of the bracket 10, so as to achieve corrosion of the edge region and the center region of the target 7, Finally, full target corrosion is achieved.

However, in the first prior art, the edge region and the center region of the target material 7 can be etched successively by controlling the rotation speed of the bracket 10, that is, the edge region of the target material 7 is etched first and then the center region is etched. Particles appear in the wafer region corresponding to the central region of the material 7, which results in lower sputtering process quality and product yield.

In addition, in the first technique, due to the loss of elastic performance of the spring, it is difficult to accurately control the position of the magnetron through different rotation speeds to achieve full target corrosion.

In view of the above technical problems in the prior art, the present invention provides a magnetron element and a magnetron sputtering device. The magnetic control element can realize full target corrosion of the target material, avoid particles in the center region of the target material, and improve the utilization rate of the target material; it can also improve the ionization rate of the metal target material during the sputtering process; at the same time, it can improve the through hole on the wafer Fill effect.

The invention provides a magnetron element for sputtering target material, which includes a closed magnetron and a non-closed magnetron. A closed plasma path is formed between an inner magnetic pole and an outer magnetic pole of the closed magnetron. A non-closed plasma path is formed between the first magnetic pole and the second magnetic pole of the control tube. The closed plasma path and the non-closed plasma path correspond to at least a radius from the center of the target to the edge of the target. And the sum of the effective extension of the closed plasma path in the radial direction of the target and the effective extension of the non-closed plasma path in the radial direction of the target is greater than or equal to the radius of the target.

Preferably, during the rotation of the magnetic control element, the closed plasma path and the area passed by the non-closed plasma path do not coincide with each other, and the rotation center of the magnetic control element is corresponding to the closed plasma path. Or in the non-closed plasma path, the rotation center of the magnetron element coincides with the center of the target.

Preferably, the orthographic projection of the closed magnetron in the plane where the target is located corresponds to the edge region of the target, and the orthographic projection of the non-closed magnetron in the plane of the target corresponds to the center region of the target.

Preferably, the orthographic projection of the closed magnetron in the plane where the target is located corresponds to the central region of the target, and the orthographic projection of the non-closed magnetron in the plane of the target corresponds to the edge region of the target.

Preferably, the effective extension length of the non-closed plasma path in the radial direction of the target material is equal to the diameter length of the target material.

Preferably, the outer magnetic pole of the closed magnetron is connected to the first magnetic pole of the non-closed magnetron.

Preferably, the outer magnetic pole of the closed magnetron is used as the first magnetic pole of the non-closed magnetron, and the non-closed plasma path is formed between the outer magnetic pole and the second magnetic pole.

The invention also provides a magnetron sputtering device, which includes a target, and also includes the above-mentioned magnetron element, which is disposed directly above the target; and further includes a DC power source and / or a radio frequency power source, the DC power source and / Or the radio frequency power supply is connected to the target for providing sputtering power to the target.

Preferably, the frequency range of the RF power source is 400k-60MHz.

Preferably, the frequency of the RF power source is 400 kHz, 2 MHz, 13.56 MHz, 40 MHz, or 60 MHz.

The beneficial effect of the present invention: The magnetic control element provided by the present invention, by making the closed plasma path and the non-closed plasma path correspond to at least a radius range from the center of the target to the edge of the target, and the closed plasma The sum of the effective extension of the path in the radial direction of the target and the effective extension of the non-closed plasma path in the radial direction of the target is greater than or equal to the radius of the target, which can not only achieve full target corrosion of the target, but also improve the use of the target. It can also avoid particles in the wafer area corresponding to the center area of the target, and improve the quality and product yield of the magnetron sputtering process. At the same time, when a DC power source is applied to the target, due to the closed plasma path The reduction of the area can increase the power density of the closed plasma path acting on the target, thereby improving the ionization rate of the target, and also improving the filling effect of the through holes on the wafer.

The magnetron sputtering device provided by the present invention not only improves the ionization rate of the metal target, but also achieves full-target corrosion by using the above-mentioned magnetron element.

In order to enable those skilled in the art to better understand the technical solutions of the present invention, a magnetron element and a magnetron sputtering device provided by the present invention are described in further detail below with reference to the accompanying drawings and specific embodiments.

Embodiment 1: This embodiment provides a magnetron element for sputtering a target material, as shown in FIG. 2, including a closed magnetron 1 and a non-closed magnetron 2, and an inner magnetic pole 11 of the closed magnetron 1. A closed plasma path 13 is formed between the outer magnetic pole 12 and the non-closed magnetron 2, and a closed plasma path 23 is formed between the first magnetic pole 21 and the second magnetic pole 22 of the non-closed magnetron 2. The plasma path 23 at least corresponds to the radius from the center of the target to the edge of the target, and the effective extension of the closed plasma path 13 in the radial direction of the target and the non-closed plasma path 23 in the radial direction of the target The sum of the effective extension lengths is greater than or equal to the radius of the target.

As shown in FIG. 2, the closed plasma path 13 and the non-closed plasma path 23 correspond to a radius from the center of the target to the edge of the target, and the closed plasma path 13 effectively extends in the radial direction of the target. The sum of the length and the effective extension length of the non-closed plasma path 23 in the radial direction of the target is equal to the radius of the target.

Among them, the outer magnetic pole 12 of the closed magnetron 1 is in a closed ring shape, the inner magnetic pole 11 is nested inside the outer magnetic pole 12, and a gap region is formed between the inner magnetic pole 11 and the outer magnetic pole 12, and the inner magnetic pole 11 and the outer magnetic pole 12 The interval between them is a closed loop. The closed annular interval is an effective magnetic field region of the closed magnetron 1, and the effective magnetic field region is the closed plasma path 13 of the closed magnetron 1. The non-closed magnetron 2 means that the first magnetic pole 21 and the second magnetic pole 22 contained therein are not closed and are spaced apart from each other to form a gap region. The gap region has a non-closed pattern, and the non-closed gap region is the first The effective magnetic field region of the non-closed magnetron 2 formed by one magnetic pole 21 and the second magnetic pole 22 is the non-closed plasma path 23 of the non-closed magnetron 2. It should be noted that the effective magnetic field region referred to in this application means that the magnetic field intensity of the magnetic field region is relatively strong, and the magnetron element mainly exerts a magnetic field function through its effective magnetic field region, but the magnetron element is not only its effective magnetic field Areas have magnetic fields.

It should be noted that, during the magnetron sputtering process, the magnetron element is rotated around its rotation center, so that the plasma path passes through the process surface of the target material, so that the target material is corroded by the magnetic field of the plasma path. Regardless of the shape of the plasma path, what actually acts in the radial direction of the target is the part corresponding to the equivalent straight line segment of the plasma path in the radial direction of the target. Since each side of the closed plasma path 13 may be straight or curved, and the closed plasma path 13 of the straight side may be parallel to the radial direction of the target or may not be in the radial direction of the target. Parallel, so the effective extension length of the closed plasma path 13 in the radial direction of the target means the equivalent linear segment length of the closed plasma path 13 in the radial direction of the target. Similarly, the non-closed plasma path 23 may be linear or curved, and the straight non-closed plasma path 23 may be parallel to the radial direction of the target or the diameter of the target. The directions are not parallel. Therefore, the effective extension length of the non-closed plasma path 23 in the radial direction of the target means the equivalent straight line length of the non-closed plasma path 23 in the radial direction of the target.

In this embodiment, the target material is circular, and the closed plasma path 13 and non-closed plasma path 23 of the magnetron element correspond to a radius from the center of the target material to the edge of the target material, and the closed plasma path The effective extension of 13 in the radial direction of the target and the non-closed plasma path. The total effective extension of 23 in the radial direction of the target is equal to the radius of the target. In this way, when the magnetron is rotated during the manufacturing process, its plasma The entire path can correspond to the entire target, so as to achieve full target corrosion of the target and improve the utilization rate of the target. At the same time, when the magnetron is rotated during the manufacturing process, due to the closed plasma path 13 and non-closed The plasma path 23 can precisely correspond to the entire target, so the entire target can be corroded, thereby avoiding the target center area caused by corroding the edge area of the target and then the center area in the prior art. The problem of particles in the corresponding wafer area has improved the quality and yield of the sputtering process.

In the present embodiment, during the rotation of the magnetron, the areas where the closed plasma path 13 and the non-closed plasma path 23 pass do not coincide with each other, and the rotation center P of the magnetron is correspondingly located in the non-closed plasma. In path 23, in this way, by rotating the magnetron element, the entire plasma path can be swept across the entire target, so that full target corrosion can be achieved. Preferably, the rotation center P of the magnetic control element coincides with the center of the target. In this way, the full target corrosion can be achieved without setting a large plasma path, thereby saving the magnet's magnetism under the premise of ensuring full target corrosion. In addition, in this embodiment, as long as the magnetron rotates around its rotation center P, full-target corrosion can be achieved. There is no need to change the position of the magnetron during the magnetron rotation process by means of springs, as in the prior art. In order to cover more target areas; therefore, the magnetic control element provided in this embodiment does not need to be provided with easily aging components such as springs, which not only has a simple structure, but also does not affect sputtering due to changes in the working state of easily aging components such as springs. The stability. At the same time, compared with the case where the closed-loop plasma path is provided in the radius region of the target corresponding to the magnetron element in the prior art, in this embodiment, since the closed plasma path 13 is provided in the radius region of the target, A non-closed plasma path 23 is provided, and the areas swept by the two during the rotation of the magnetron do not overlap with each other, so the area of the closed plasma path 13 is relatively reduced, and a DC power source is applied to the target. In the case, the reduction of the area can increase the power density of the closed plasma path 13 acting on the target, thereby increasing the ionization rate of the target and improving the filling effect of the through holes on the wafer.

In this embodiment, the orthographic projection of the closed magnetron 1 on the plane of the target corresponds to the edge region of the target, and the orthographic projection of the non-closed magnetron 2 on the plane of the target corresponds to the center region of the target. In this way, when the magnetron is rotated during the manufacturing process, the closed plasma path 13 corresponds to the edge region of the target, and the non-closed plasma path 23 corresponds to the center region of the target. The sum of the effective extension of the slurry path 13 in the radial direction of the target and the non-closed plasma path 23 in the radial direction of the target is greater than or equal to the radius of the target. In this way, when the closed magnetron 1 and the non-closed magnetron After the control tube 2 rotates around the rotation center P once, the area swept by the orthographic projection of the closed plasma path 13 on the target is a ring with P as the center, and the non-closed plasma path 23 on the target. The area scanned by the orthographic projection is a circle centered on P (that is, a circle formed by the non-closed plasma path 23), and the inner diameter of the ring is smaller than or equal to the diameter of the circle (the circle formed by path 23). In this way, by rotating the magnetron element, the entire plasma path of the magnetron element can be swept across the entire target to achieve full target corrosion, thereby improving the utilization rate of the target material. During the rotation of the magnetron around the rotation center P, the closed plasma path 13 corresponds to the edge region of the target, while the non-closed plasma path 23 corresponds to the center region of the target. During the process, the target The center area of the material and the edge area of the target are subject to corrosion at the same time, so the problem of particles in the wafer area corresponding to the center area of the target caused by the edge area of the target material and the center area can be avoided in the prior art, thereby improving The quality and yield of the sputtering process.

In this embodiment, the outer magnetic pole 12 of the closed magnetron 1 is connected to the first magnetic pole 21 of the non-closed magnetron 2. In this way, during the rotation of the magnetron around its rotation center P, the closed plasma path 13 and the non-closed plasma path 23 can be swept through the radius area of the target better, thereby avoiding the radius of the target The area is partially missed, and full target corrosion is better achieved.

It should be noted that, as shown in FIG. 3, the closed magnetron 1 and the non-closed magnetron 2 may not be connected, that is, they are provided independently of each other, and during the rotation of the magnetron, the closed plasma path 13 and the area where the non-closed plasma path 23 passes partially overlap. The closed plasma path 13 formed by the closed magnetron 1 and the non-closed plasma path 23 formed by the non-closed magnetron 2 sweep across the target together. The radius of the material. In this way, full-target corrosion can also be achieved. At the same time, compared to the case where the magnetic control element only has a closed plasma path in the radius region of the target in the prior art, the magnetic control element in Figure 3 corresponds to the target material. In the radius area, both closed plasma path 13 and non-closed plasma path 23 are provided, and the area swept by the two during the magnetron rotation only partially overlaps, so the closed plasma path 13 is made. The area of the target is relatively reduced. When DC power is applied to the target, the reduction of the area can increase the power density of the closed plasma path 13 acting on the target, thereby increasing the ionization rate of the target and improving the ionization rate of the target. The filling effect of the through-holes on the wafer is improved.

In this embodiment, the magnetron element further includes a back plate 3. The closed magnetron 1 and the non-closed magnetron 2 are disposed on the same surface of the back plate 3. The shape of the back plate 3 is circular, and the back plate 3 is the same size as the target. The back plate 3 is completely coincident with the target. The back plate 3 can be rotated by the motor to drive the closed magnetron 1 and the non-closed magnet. The control tube 2 rotates. The setting of the back plate 3 can maintain a set distance between the closed magnetron 1 and the non-closed magnetron 2 and the target, thereby ensuring the stability of the magnetron sputtering.

In this embodiment, as shown in FIG. 2, the closed shapes of the inner magnetic pole 11 and the outer magnetic pole 12 of the closed magnetron 1 are both kidney-shaped. Of course, the closed shape of the inner magnetic pole 11 and the outer magnetic pole 12 of the closed magnetron 1 may also be circular (as shown in FIG. 4), or the closing of the inner magnetic pole 11 and the outer magnetic pole 12 of the closed magnetron 1 may be closed. The shape may be other closed shapes.

In addition, in this embodiment, the distance between the inner magnetic pole 11 and the outer magnetic pole 12 of the closed magnetron 1 (that is, the width of the closed plasma path 13) and the first and second magnetic poles 21 and 2 of the non-closed magnetron 2 The spacing between the magnetic poles 22 (that is, the width of the non-closed plasma path 23) is equal. In this way, the magnetic field strength in the closed plasma path 13 and the non-closed plasma path 23 can be made the same, which is beneficial to achieving uniform sputtering of the target. Of course, the width of the closed plasma path 13 and the width of the non-closed plasma path 23 may not be equal.

Embodiment 2 This embodiment provides a magnetron element. The difference from Embodiment 1 is that, as shown in FIG. 5, the outer magnetic pole 12 of the closed magnetron 1 is used as the first magnetic pole of the non-closed magnetron 2. A non-closed plasma path is formed between the outer magnetic pole 12 and the second magnetic pole 22. That is, the second magnetic pole 22 of the non-closed magnetron 2 and the outer magnetic pole 12 of the closed magnetron 1 are spaced from each other and form a gap region. An effective magnetic field is formed in the gap region, and the effective magnetic field region is a non-closed plasma. Path 23.

In this embodiment, during the rotation of the magnetron around its rotation center P, the closed plasma path 13 corresponds to a portion of the target radius, and the non-closed plasma path 23 corresponds to the entire target. In the radius area, during the sputtering process of the target, the closed plasma path 13 and the non-closed plasma path 23 are swept through the radius of the target, thereby achieving full target corrosion and improving the utilization rate of the target. At the same time, it also avoids the problem of particles in the wafer area corresponding to the center area of the target caused by corroding the edge area of the target first and then the center area in the prior art, thereby improving the quality of the sputtering process and the product yield. In addition, compared with the case where the closed-loop plasma path is provided in the radius region of the target for the magnetron element in the prior art, the closed-loop electromagnet element is provided in the radius region of the target for the magnetron element in FIG. 5. The plasma path 13 is also provided with a non-closed plasma path 23, and the areas scanned by the two during the magnetron element rotation only partially overlap, so the areas of the closed plasma path 13 are relatively opposite Decreased, in the case of applying DC power to the target, the reduction in area can increase the power density of the closed plasma path 13 acting on the target, thereby improving the ionization rate of the target and improving the wafer Filling effect of through holes.

The other structures of the magnetron element in this embodiment are the same as those in Embodiment 1, and will not be repeated here.

Embodiment 3: This embodiment provides a magnetron element. The difference from Embodiment 1-2 is that, as shown in FIG. 6, the orthographic projection of the closed magnetron 1 on the plane where the target is located corresponds to the center region of the target. The orthographic projection of the non-closed magnetron 2 on the plane where the target is located corresponds to the edge region of the target.

During the rotation of the magnetron around its rotation center P, the closed plasma path 13 corresponds to the center region of the target, and the non-closed plasma path 23 corresponds to the edge region of the target. The closed plasma path 13 Corresponds to the non-closed plasma path 23 sweeping over the radius of the target material, thereby achieving full target corrosion and improving the utilization rate of the target material; meanwhile, it avoids corrosion of the edge area of the target material before corrosion in the prior art The problem of particles in the wafer area corresponding to the center area of the target caused by its center area improves the quality of the sputtering process and the product yield; at the same time, compared with the prior art, the magnetron element corresponds to the radius area of the target. In the case where only a closed plasma path is provided, in this embodiment, because both a closed plasma path 13 and a non-closed plasma path 23 are provided in a radius region of the target, both of them are on the magnetron element. The areas swept during rotation do not coincide with each other, so the area of the closed plasma path 13 is relatively reduced. When a DC power is applied to the target, the reduction of the area can improve the closed area. Slurry path 13 to effect a power density on the target, thereby increasing the ionization rate of the target, and to improve the through-holes on the wafer filling effect.

Accordingly, the rotation center P of the magnetron element in this embodiment is located in the closed plasma path 13 correspondingly. In this way, by rotating the magnetron element, the entire plasma path can be swept across the full target, so that full target corrosion can be achieved.

The other structures of the magnetron element in this embodiment are the same as those in Embodiment 1 or 2, which will not be repeated here.

Embodiment 4: This embodiment provides a magnetic control element. The difference from Embodiment 1-3 is that, as shown in FIG. 7, the effective extension length of the closed plasma path 13 in the radial direction of the target and the non-closed current The sum of the effective extension lengths of the slurry paths 23 in the radial direction of the target is larger than the radius of the target. Preferably, the effective extension length of the non-closed plasma path 23 in the radial direction of the target material is equal to the diameter length of the target material. That is, the equivalent linear segment length of the non-closed plasma path 23 in the radial direction of the target is equal to the diameter length of the target. The setting manner of the closed magnetron 1 in this embodiment is the same as that of any one of the embodiments 1-3.

In this way, during the rotation of the magnetron around its center of rotation P, the closed plasma path 13 corresponds to a partial radius of the target, and the non-closed plasma path 23 corresponds to the entire diameter of the target. The plasma path 13 and the non-closed plasma path 23 are swept across the entire diameter area of the target, thereby achieving full-target corrosion and improving the utilization rate of the target. At the same time, the target is not corroded in the prior art. The problem of particles in the wafer region corresponding to the center region of the target caused by the edge region of the material being corroded again in the center region improves the quality of the sputtering process and the product yield; at the same time, compared with the corresponding magnetron components in the prior art In the case where only a closed plasma path is provided in the radius region of the target, the magnetic control element in FIG. 3 corresponds to both a closed plasma path 13 and a non-closed plasma path in the radius region of the target. Path 23, and the area scanned by the two during the rotation of the magnetron only partially overlaps, so the area of the closed plasma path 13 is relatively reduced, and a DC power is applied to the target. In the case of reducing the area, the power density of the closed plasma path 13 acting on the target can be increased, thereby increasing the ionization rate of the target and improving the filling effect of the through holes on the wafer.

The other structures of the magnetron element in this embodiment are the same as those of any one of Embodiments 1-3, and are not repeated here.

Advantageous effects of embodiment 1-4: The magnetic control element provided in embodiment 1-4 can make the closed plasma path and the non-closed plasma path correspond to at least the radius from the center of the target to the edge of the target. Area, and the sum of the effective extension of the closed plasma path in the radial direction of the target and the effective extension of the non-closed plasma path in the radial direction of the target is greater than or equal to the radius of the target, which can not only achieve the full target of the target Corrosion improves the utilization rate of the target material; and can avoid particles in the wafer area corresponding to the central area of the target material, which improves the quality and product yield of the magnetron sputtering process; at the same time, when a DC power source is applied to the target material As the area of the closed plasma path is reduced, the power density of the closed plasma path on the target can be increased, thereby improving the ionization rate of the target and the filling effect of the through holes on the wafer.

Embodiment 5: This embodiment provides a magnetron sputtering device. As shown in FIG. 8, it includes a target 7 and also includes a magnetron 15 in any one of Embodiments 1-4. The magnetron 15 is disposed on the target. Material 7 directly above; the magnetron sputtering device further includes a radio frequency power supply 16 and / or a DC power supply 17 and its control element 18, the radio frequency power supply 16 and / or a DC power supply 17 are connected to the target material 7, and the control element 18 is connected to the radio frequency power supply 16 and / or a DC power source 17, and the control element 18 is used to control the RF power source 16 and / or the DC power source 17 to provide sputtering power for the target 7.

The control element 18 controls the RF power source 16 and the DC power source 17 to be alternately applied to the target material 7 so as to provide sputtering power to the target material 7. Under the action of the RF power source 16, the closed plasma path and the non-closed plasma path correspond to at least a radius from the center of the target 7 to the edge of the target 7, and the closed plasma path is in the diameter of the target 7 The sum of the effective extension length in the upward direction and the effective extension length of the non-closed plasma path in the radial direction of the target material 7 is greater than or equal to the radius of the target material 7, which can make the surface corrosion of the target material 7 more uniform and achieve full target corrosion. The material utilization rate is higher, and at the same time, the ionization rate of the target 7 can be improved; under the action of the DC power supply 17, the closed plasma path area of the closed magnetron is relatively reduced, which improves the effect of the closed plasma path to The power density on the target material 7 improves the ionization rate of the target material 7 and also improves the effect of via filling on the surface of the wafer 19. The RF power source 16 and the DC power source 17 act alternately on the target material 7 to achieve full target corrosion and increase the target material utilization rate; at the same time, the ionization rate of the target material 7 can be improved, and a better through-hole filling effect can be obtained.

In this embodiment, the frequency range of the RF power source is 400k-60MHz. The frequency of the preferred RF power source is 400 kHz, 2 MHz, 13.56 MHz, 40 MHz, or 60 MHz.

The beneficial effect of Embodiment 5. The magnetron sputtering device provided in Embodiment 5 not only improves the ionization rate of the metal target, but also realizes the full target by using the magnetron element in any one of Embodiments 1-4. corrosion.

It can be understood that the above embodiments are merely exemplary embodiments used to explain the principle of the present invention, but the present invention is not limited thereto. For those of ordinary skill in the art, various variations and improvements can be made without departing from the spirit and essence of the present invention, and these variations and improvements are also considered as the protection scope of the present invention.

1‧‧‧ closed magnetron

2‧‧‧ non-closed magnetron

3‧‧‧ back plate

4‧‧‧Drive shaft

5‧‧‧ spring

6‧‧‧Magnetron

7‧‧‧ target

8‧‧‧Drive board

9‧‧‧Magnetron mounting plate

10‧‧‧ Bracket

11‧‧‧Inner magnetic pole

12‧‧‧ outer magnetic pole

13‧‧‧ closed plasma path

14‧‧‧axis

15‧‧‧Magnetron

16‧‧‧RF Power

17‧‧‧DC Power

18‧‧‧Control element

19‧‧‧Chip

21‧‧‧ the first magnetic pole

22‧‧‧Second magnetic pole

23‧‧‧ Non-closed plasma path

P‧‧‧ center of rotation of magnetron

Fig. 1a is a schematic diagram of the movement of the magnetron relative to the target in the prior art; Fig. 1b is a schematic diagram of the rotation position of the drive plate relative to the bracket when the rotation speed of the magnetron is high in Fig. 1a; Fig. 1c is 1a In the figure, the rotational position of the drive plate relative to the bracket when the rotation speed of the magnetron is low; FIG. 2 is a plan view of the structure of the magnetron element in Embodiment 1 of the present invention; FIG. 3 is the magnetron element in Embodiment 1 of the present invention FIG. 4 is another structural top view of the magnetron element in Embodiment 1 of the present invention; FIG. 5 is a structural top view of the magnetron element in Embodiment 2 of the present invention; FIG. 6 is an embodiment of the present invention Top view of the structure of the magnetron element in 3; FIG. 7 is a top view of the structure of the magnetron element in Embodiment 4 of the present invention; and FIG. 8 is a schematic view of the structure of the magnetron sputtering device in Embodiment 5 of the present invention.

Claims (10)

A magnetron element for sputtering targets is characterized in that it includes a closed magnetron and a non-closed magnetron. A closed plasma path is formed between the inner and outer magnetic poles of the closed magnetron. A non-closed plasma path is formed between the first magnetic pole and the second magnetic pole of the non-closed magnetron, and the closed plasma path and the non-closed plasma path correspond to at least the center of the target to the target And the effective extension length of the closed plasma path in the radial direction of the target and the effective extension length of the non-closed plasma path in the radial direction of the target are greater than or equal to the radius of the target. The magnetic control element according to item 1 of the scope of the patent application, wherein during the rotation of the magnetic control element, the closed plasma path and the non-closed plasma path pass through areas that do not overlap each other. The rotation center of the magnetic control element is located in the closed plasma path or the non-closed plasma path, and the rotation center of the magnetic control element coincides with the center of the target. The magnetron element according to item 1 of the patent application scope, wherein the orthographic projection of the closed magnetron on the plane where the target is located corresponds to the edge region of the target, and the non-closed magnetron is on the target. The orthographic projection of the plane is located in the center area of the target. The magnetron according to item 1 of the scope of patent application, wherein the orthographic projection of the closed magnetron on the plane where the target is located corresponds to the center region of the target, and the non-closed magnetron is on the target. The orthographic projection of the plane is corresponding to the edge area of the target. The magnetic control element according to item 1 of the scope of patent application, wherein the effective extension length of the non-closed plasma path in the radial direction of the target is equal to the diameter length of the target. The magnetron according to item 1 of the scope of patent application, wherein the outer magnetic pole of the closed magnetron is connected to the first magnetic pole of the non-closed magnetron. The magnetron element according to item 1 of the scope of the patent application, wherein the outer magnetic pole of the closed magnetron is used as the first magnetic pole of the non-closed magnetron, and between the outer magnetic pole and the second magnetic pole Make up this non-closed plasma path. A magnetron sputtering device includes a target, which further includes a magnetron as described in any one of claims 1 to 7 of the scope of patent application, and the magnetron is disposed directly above the target. And further comprising a direct current power source and / or a radio frequency power source, the DC power source and / or the radio frequency power source being connected to the target material for providing sputtering power to the target material. The magnetron sputtering device according to item 8 of the scope of patent application, wherein the frequency range of the RF power source is 400k-60MHz. The magnetron sputtering device according to item 9 of the scope of the patent application, wherein the frequency of the RF power source is 400 kHz, 2 MHz, 13.56 MHz, 40 MHz, or 60 MHz.