TW201814802A - Apparatus for analyzing substrate contamination - Google Patents

Abstract

A method for analyzing a substrate contamination according to the present invention includes process of providing drops of an etching solution to etch a substrate and providing drops of a dilute solution to dilute the etching solution for the substrate in sequence at a time interval. The etching solution and the dilute solution are directed to the nozzle through the flow path. According to the present invention, it results in an effect of obtaining a doping profile in a depth direction at a specific point of the wafer. In particular, compared with the case where only the etching solution is used, the amount of the sample is increased by using the scanning solution to dilute the etching solution. Therefore, the analysis can be performed more easily by the analyzer, and the residual phenomenon of the contaminants can be reduced.

Description

Substrate contamination analysis device

The present invention relates to a substrate contaminant analysis device and a substrate contaminant analysis method capable of analyzing a metal atom or the like by In-Line.

As a conventional contaminant analysis device for a semiconductor wafer, an apparatus structure for automatically collecting a surface of a wafer and collecting contaminants for analyzing a metal contamination source adsorbed on a wafer surface is disclosed.

One of the main causes of defects (defect) or poor life in semiconductor manufacturing processes and shortened life in long-term use is due to metal (metal) impurities. However, metal impurities are not only present on the surface of the wafer, but also inside the wafer (base: Bulk). Such metal impurities can be directly formed on the substrate during the wafer fabrication process, and can also be invaded from the outside due to the characteristics of the metal impurities. The matrix, and thus such metal impurities formed in the matrix region, cause an undesirable cause such as an electrical abnormality of the device.

However, the above-mentioned substrate contaminant analysis device has the following problems: that only the surface of the wafer can be scanned, and only the contamination on the surface of the wafer can be analyzed, and the contamination in the memory of the wafer (Bulk) memory cannot be analyzed, or the film cannot be obtained. A doping profile from the depth direction at a specific location of the wafer.

Further, the substrate contamination analysis device is introduced into the optical monitoring wafer in the semiconductor manufacturing process for gas phase decomposition, and then analyzed by the nozzle scanning analyzer. Substrate contamination analysis is accompanied by chemical etching in the gas phase decomposition and scanning process, and the optical monitoring wafer for analysis is discarded. Therefore, the cost of the optical monitoring wafer is high.

It is an object of the present invention to provide a substrate contaminant analysis apparatus and analysis method capable of solving at least one of the above problems of the prior art, and an object of the present invention is to be able to analyze contaminants in a bulk (Bulk) memory of a wafer. Substrate contamination analysis device and analysis method.

Further, another object of the present invention is to provide a substrate contaminant analysis apparatus and analysis method capable of obtaining a doping profile from a depth direction at a specific place of a wafer.

Further, another object of the present invention is to enable a substrate contamination analysis apparatus and an analysis method capable of recycling a light monitoring wafer used for analysis.

The technical problem to be solved by the present invention is not limited to the above-mentioned technical problems, and those skilled in the art of the present invention can clearly understand other technical problems not mentioned by the following description.

A substrate contaminant analyzing device according to an embodiment of the present invention, as a substrate contaminant analyzing device for analyzing an object after collecting a contaminant by using a nozzle on an analysis object substrate, wherein the nozzle includes a nozzle tip portion, An inner side of the nozzle tip is formed with an exhaust passage along a longitudinal direction, the exhaust passage being a passage for discharging a gas which occurs during etching of the analyte substrate.

A substrate contaminant analyzing device according to an embodiment of the present invention, as a substrate contaminant analyzing device for analyzing an object after collecting a contaminant by using a nozzle on an analysis object substrate, wherein a nozzle tip of the nozzle includes a a nozzle tip and a second nozzle tip enclosing an outer peripheral surface of the first nozzle tip, the purge gas is discharged through the interval between the first nozzle tip and the second nozzle tip, at the first An inner side of the nozzle tip is formed with an exhaust passage along the longitudinal direction.

A substrate contaminant analysis method according to an embodiment of the present invention, as a substrate contaminant analysis method using a substrate contaminant analysis device for performing analysis by using a nozzle to collect contaminants on an analysis object substrate, characterized in that it includes the first a step of sequentially supplying droplets of an etching solution for etching the analyte substrate and droplets of a diluted dilution solution for diluting the etching solution to the analyte substrate at intervals of time, and the etching solution And the diluted solution is delivered to the nozzle through a flow path.

A substrate contaminant analysis method according to an embodiment of the present invention is a substrate contaminant analysis method using a substrate contaminant analysis device that performs analysis by trapping contaminants on an analyte substrate using a nozzle.

A substrate contaminant analyzing device according to an embodiment of the present invention, after performing vapor phase decomposition as a wafer introduced into a semiconductor manufacturing process, transports a solution for trapping contaminants to an analyzer, and performs the analyzer through the analyzer. The analyzed substrate contaminant analysis device is characterized in that it comprises a recycling unit for recycling a wafer that completes the trapping of the contaminant, in a state of being clamped by the wafer holder, by at least including an acid series or a solution of a salt-based series of chemical substances; the wafer holder includes a wafer holder rotatably fixed to the carrier, having a contact portion and a first magnet in contact with a side of the wafer, The wafer holder rotates in a direction of pressurizing the side surface of the wafer when the wafer holder rotates.

A substrate contaminant analyzing apparatus according to an embodiment of the present invention is configured to include a wafer in which a wafer is disposed in a wafer clip element before the capturing, as a contaminant for analyzing an object wafer for capturing and analyzing. A substrate contaminant analysis device for a gas phase decomposition gas phase decomposition unit, characterized in that the wafer holder assembly comprises: a bracket extending radially from a center of rotation of the wafer holder member; a plurality of vacuum clamps A nozzle is attached to the bracket, and is vacuum-sucked and clamped in a state where the lower portion of the wafer is brought into contact at the time of the placement.

A substrate contaminant analyzing apparatus according to an embodiment of the present invention is configured to include a wafer in which a wafer is disposed in a wafer clip element before the capturing, as a contaminant for analyzing an object wafer for capturing and analyzing. A substrate contaminant analysis device for a gas phase decomposition gas phase decomposition unit, characterized in that the wafer holder assembly comprises: a bracket extending radially from a center of rotation of the wafer holder member; a carrier pin, mounted In the tray, the wafer is placed in a state where the lower portion of the wafer is in point contact during the positioning; the wafer guide is mounted on the bracket, and is guided during the positioning The side of the wafer.

Embodiments of the present invention will be described in detail with reference to the drawings in order to be readily implemented by those skilled in the art. However, the invention may be embodied in various different forms and is not limited to the embodiments described herein. Also, in order to clearly explain the present invention, the parts that are not related to the description are omitted in the drawings, and similar names and reference numerals are used for the similar parts throughout the specification. Meaning of term

In the present specification, the 'substrate' includes a semiconductor wafer, an LCD substrate, an OLED substrate, and the like. If not specifically defined, the 'substrate' means not only an initial state in a manufacturing process but also an oxide film, a polysilicon layer, a metal layer. The interlayer film or element or the like is formed in one or more states.

In the present specification, 'scanning' includes scanning of a whole or a partial region of a substrate, and includes scanning by a depth direction at a specific point of the substrate in order to obtain a point depth doping profile (Point Depth Profile), as the case may be.

In the present specification, as long as it does not collide with other descriptions, 'scanning solution' refers to a solution that supplies or supplies a contaminant to a substrate for scanning a substrate or a trapping substrate, and may also be used in usual scanning depending on the situation. The solution, 'sample solution' refers to a solution that traps contaminants or the like of the substrate. The overall composition and operation of the substrate contamination analysis device

Fig. 1 is a plan view showing the overall configuration of a substrate contaminant analyzing apparatus according to an embodiment of the present invention.

The substrate contaminant analysis device of the present invention comprises: a loading crucible (10), a robot (20), a positioning unit (30), a VPD unit (40), a scanning unit (50), a recycling unit (60), and an analyzer ( 70).

The loading cassette (10) is located on one side of the substrate contaminant analysis device, and opens the cassette of the storage substrate to provide a passage for introducing the substrate into the interior of the substrate contaminant analysis device. The robot (20) is for holding the substrate, and automatically transports the substrate between the respective constituent elements of the substrate contamination analyzing device, and more specifically, the cassette of the loading cassette (10), the positioning unit (30), and the VPD unit (40) The substrate is transported between the scanning unit (50) and the recycling unit (60). The positioning unit (30) performs the function of the entire array of substrates, in particular, for aligning the center of the substrate before loading the substrate on the scanning table (51).

The VPD unit (40) is a gas phase decomposition unit that performs vapor phase decomposition (VPD: Vapor Phase Decomposition) on the substrate, and includes: an introduction port and a gate for introducing the substrate, a process chamber, and a carrier plate formed inside the process chamber. The surface of the substrate or the substrate is etched by a etchant in a gaseous state, such as a wafer clip element and an etching gas ejection port.

The scanning unit (50) includes a scanning platform (51) and a scanning module (52). The scanning platform (51) executes a substrate disposed in the VPD unit (40) for gas phase decomposition, and uses a scanning module in a state where the substrate is disposed. (52) A function of rotating the substrate during scanning of the substrate. The scanning module (52) is formed on one side of the scanning table (51), and includes a nozzle (53: refer to FIG. 2) for supplying a scanning solution and/or an etching solution or the like to the substrate adjacent to the substrate, and a state in which the nozzle is mounted at one end. The position of the nozzle is moved to, for example, a scanning module arm in the 3-axis direction. The nozzle and the scanning module can be formed in one or more. The nozzle of the scanning unit (50) supplies an etching solution and/or a scanning solution through a flow path, and collects a sample solution of the contaminant through the supplied solution, and transports it to the analyzer (70) through a flow path.

The recycling unit (60) processes the substrate using the solution containing the acid series or the salt-based series in order to recycle the substrate on which the contaminant is collected, including: the introduction port and the door for introducing the substrate, and the process chamber The chamber, the carrier plate formed inside the process chamber, the wafer holder, and the nozzle for ejecting the solution, etc., will be described later in detail.

The analyzer (70) receives the sample solution conveyed from the nozzle of the scanning unit (50) through the flow path for analysis, and analyzes the presence or absence of the contaminant contained in the sample solution, the content of the contaminant or the concentration of the contaminant, and the like. The analyzer (70) is preferably inductively coupled plasma mass spectrometry (ICPMS).

Further, the substrate contaminant analyzing device may be formed by separately forming a vapor phase decomposing unit (not shown) for the substrate in the vapor phase of the substrate in the VPD unit (40), or for example, replacing the recycling unit (60). It constitutes a base unit.

Further, a substrate contaminant analyzing apparatus according to an embodiment of the present invention includes a portion for automatic manufacturing and transport of a scanning solution and an etching solution, generation and supply of an etching gas, transport of a sample solution, and the like, and the above-described portion It is mainly formed on the side or inside of the substrate contamination analysis device, which will be described later.

Hereinafter, the method of the overall configuration operation of the substrate contamination analysis device will be generally described based on the case of analyzing the contamination on the surface of the substrate.

The robot (20) introduces the substrate to be analyzed from the loading crucible (10) into the process chamber of the VPD unit (40), and the VPD unit (40) performs gas phase decomposition on the surface of the substrate by using an etching gas. Therefore, the oxide film on the surface of the substrate is bonded to the etching gas and is discharged in a gaseous state, and impurities such as metal atoms contained in the surface and the oxide film remain in the state of being trapped on the surface of the substrate. At this time, when the substrate of the substrate is subjected to gas phase decomposition, the substrate is also subjected to gas phase decomposition by the vapor phase decomposition unit or the VPD unit (40) for the substrate.

Then, the substrate is taken out from the VPD unit (40) or the substrate by the gas phase decomposing unit by the robot (20), and then placed on the scanning table (51). Then, the scanning solution is transported from the scanning solution container (121: see FIG. 2) to the tip end of the nozzle by the flow path so that the liquid droplet of the scanning solution is contained between the tip end of the nozzle and the surface of the substrate.

Further, in this state, the rotation of the parallel scanning stage (51) and the position control of the scanning module arm are performed to scan the substrate.

The scanning generally includes scanning on the plane in which the nozzles relatively move on the plane of the substrate, scanning in the depth direction by repeated etching in the depth direction of the substrate, and scanning of both.

The scanning on the plane causes the nozzle to move on the substrate in a spiral-shaped trajectory, or each time the substrate completes one rotation, the position of the nozzle is moved, so that the nozzle moves in a plurality of concentric circular trajectories to scan the substrate.

The surface of the substrate is scanned by the nozzle, and the scanning solution becomes a sample solution for adsorbing a pollutant such as a metal atom. After the scanning is completed, the nozzle adsorbs the sample solution, and the sample solution is transported from the nozzle to the analyzer (70) through the flow path, and ICP- An analyzer (70) such as MS analyzes the sample solution being transported.

In the state where the depth direction scan is in a position on the plane of the fixed nozzle, the etching solution and the scanning solution are sequentially supplied, or an etching solution is supplied onto the substrate.

The supplied solution becomes a sample solution for adsorbing a pollutant such as a metal atom, and the nozzle sucks the sample solution, and the sample solution is transported from the nozzle to the analyzer (70) through a flow path, and the sample solution is analyzed by an analyzer (70) such as ICP-MS. Further, the supply of the solution onto the substrate, the suction and delivery of the sample solution, and the analysis by the analyzer (70) are repeatedly performed, whereby the depth direction scan for obtaining the point depth doping profile (Point Depth Profile) can be performed.

The scanning solution is, for example, a solution containing hydrofluoric acid (HF), hydrogen peroxide (H 2 O 2 ), and deionized water, and the etching solution is, for example, a solution containing hydrofluoric acid (HF), nitric acid (HNO 3 ), and deionized water.

The substrate on which scanning is completed is introduced from the scanning table (51) into the process chamber of the recycling unit (60) by the robot (20), and the substrate is subjected to chemistry including an acid series or a salt-based series by the recycling unit (60). The solution of the substance is processed so that the substrate can be recovered, and then the robot (20) takes the substrate out of the process chamber of the recycling unit (60) and mounts it on the cassette of the loading cassette (10) again.

And, before introducing the VPD unit (40), before the VPD unit (40) is taken out to the scanning station (51), or after being taken out from the scanning station (51) and then transported to the recycling unit (60), the positioning unit is used. (30) Align the substrates.

Hereinafter, the detailed features of the substrate contaminant analysis device and the substrate contaminant analysis method constituting an embodiment according to the present invention will be described in detail. Scanning through the flow passage of the solution / etching solution and a sample solution conveyor

Fig. 2 is a view schematically showing a flow path, a valve, and the like for supplying and conveying a scanning solution/etching solution, a sample solution, a standard solution, and the like in a substrate contaminant analyzing device according to an embodiment of the present invention.

The sample conduit (82, 92, 112) is a conduit having a space capable of loading a trace amount of solution, which may be in the form of a rod, a spiral or a ring, and the sample conduit may be, for example, a sample loop.

The dosing pump (85, 86, 95) may be a syringe pump, a diaphragm pump, an air pump, a cylinder pump, etc., and a pump of a high precision type may be preferred, and the pump (87, 96, 116) may also be a dosing pump or other form of pump. A pump of a larger capacity can be preferred.

The scanning solution of the scanning solution container (121) or the etching solution of the spot etching liquid container (131) is stored by an automatic manufacturing apparatus. Each solution is delivered to the nozzle (53) through a valve system including a third pump (116) and a third valve (113), a fourth valve (114), and a fifth valve (115).

The process of transporting the scanning solution/etching solution through the nozzle (53) will be described below, and the fifth valve (115) between the scanning solution container (121) and the third pump (116) is opened, and the third pump (116) is used to extract the predetermined valve. volume of. The scanning solution is sensed by the third liquid sensor (111) to reach the third sample conduit (112) located at the front end of the third pump (116).

Then, after the fifth valve (115) is closed to open the third valve (113), the quantitative scanning solution is supplied to the nozzle (53) by the third pump (116). And, in order to etch and scan the substrate, the etching solution of the etchant container (131) is also supplied to the nozzle (53) in a similar manner, and is used together with the scanning solution, and the etching solution and the scanning solution are alternately or in a certain order. Provided to the nozzle (53).

Although a single nozzle (53) is used as described above, the on-plane scanning nozzle and the depth-direction scanning nozzle may be separated depending on the case. Further, in the above, the solution is supplied to the nozzle through a single flow path. However, when the etching solution and the scanning solution are supplied using a single nozzle, they may be transported by pumps, valves, and flow paths that are different from each other.

Further, the sample introduction unit (100) is a device for introducing a sample solution, a standard solution, a scanning solution, or deionized water as a sample to the analyzer (70), and includes a sample solution introduction unit (80) and a standard solution introduction unit ( 90) constitutes.

The switching valve (81, 91) is combined with the sample pipe (82, 92) to form a loading position for loading the solution into the sample pipe and an injection position for injecting the loaded solution, and is controlled at the loading position and the injection position. Convert between. The switching valve (81, 91) can also be formed by an injection valve or by combining a plurality of valves and flow paths. Preferably, the switching valve (81, 91) is an injection valve formed with multiple turns, for example, formed with 6 turns.

The liquid sensor (83, 93, 111) is a sensor that senses a liquid, and the liquid sensor is a photo sensor capable of grasping the presence or absence of a liquid or a proximity sensor that senses a change in a coupled capacitance or the like. In particular, the liquid sensor (83, 93, 111) is mounted close to or attached to the sample conduit (82, 92, 112) to sense the liquid within the sample conduit.

The liquid sensor (83, 93, 111) can be mounted in the center or on one side of the sample conduit (82, 92, 112), and more than two liquid sensors can also be installed.

The sample solution introduction unit (80) selectively introduces a sample solution or a scanning solution or the like, and includes a first switching valve (81), a first sample tube (82), a first liquid sensor (83), and a first metering pump ( 85) A second dosing pump (86, a first valve (88), a second valve (89), and the like.

The first sample pipe (82) is a pipe having a space in which a sample solution scanned through a nozzle can be loaded, and a first liquid sensor (83) is attached.

The first switch valve (81) of the first switch valve (81) is combined with the first sample pipe (82), and at least the sample solution or the scan solution is mainly loaded with the sample solution in the first sample pipe (82). The loading position and the injection position at which the sample solution to be loaded is ejected toward the side of the analyzer (70).

When the sample solution is loaded into the first sample pipe (82), the gas zone is included before and after the sample solution, the gas may be air or an inert gas, and the first liquid sensor (83) is installed in the first sample pipe (82). ), distinguish between the sensing gas interval and the sample solution.

The sample solution introduction portion (80) and the standard solution introduction portion (90) are attached to the sample conduits (82, 92), and the sample solution or standard solution is perceived by distinguishing the liquid sensor (83, 93) that senses the gas interval and the sample solution. Waiting for or moving.

In the loading position, if the first liquid sensor (83) senses in the order of gas and liquid, it is determined that the sample solution reaches the sample pipe (82) from the nozzle, and if the liquid sensor (83) is in the liquid position at the injection position The sequential sensing of the gas determines that the sample solution has moved toward the side of the analyzer (70).

The first dosing pump (85) is mainly used when the switch valve (81) is loaded with the sample solution in the sample pipe (81) at the loading position, and the second dosing pump (86) is mainly used for the switch valve (81) as the injection position. The loaded sample solution is pushed to the analyzer (70) side with deionized water.

In order to complete the quantitative solution transfer, air or gas or the like may be utilized to additionally push during or after the pump discharge. The moving distance of the sample is usually in the range of 2 to 4 m, but it may be outside.

Hereinafter, the operation of the sample solution introduction unit (80) will be described in detail.

In the basic state, the first switching valve (81) is at the injection position, and the deionized water is always supplied to the analyzer (70) through the first sample conduit (82), having the first sample conduit (82) and the flow path. Cleaning effect. Further, the pipe from the nozzle (53) to the first switching valve (81) is in a state of being filled with non-liquid air or gas.

After the nozzle (53) completes the scanning, the first valve (88) is opened, so that the first switching valve (81) is sucked into the sample by the first metering pump (85) at the loading position, and the scanned sample solution is loaded at the nozzle (53). a first sample conduit (82) formed in the middle of the flow path with the analyzer (70). The moving distance of the sample solution is, for example, in the range of 2 to 4 m.

When the sample solution reaches the sample pipe, it is sensed by the first liquid sensor (83), so that the first switching valve (81) is switched to the injection position. When the first liquid sensor (83) senses in the order of gas and liquid, it is determined that the sample solution has reached the first sample pipe (82) from the nozzle.

The flow path between the nozzle (53) and the sample pipe (82) is in a state of filling with air or gas, and when the sample solution moves by the pump operation, the sample solution is filled with air or gas before and after. It provides the advantage of only identifying the interval of the sample solution. For example, before the sample solution is introduced into the first sample conduit (82), there is a gas region, and the liquid sensor of the first sample conduit (82) is in an off state. At this time, when the liquid sample solution reaches the first liquid sensor (83), the output state of the liquid sensor is turned to the on state. At this time, the first switching valve (81) is switched to the ejection position, and the sample solution is set. The sample is stored in the first sample line (82), and the first metering pump (85) for suction is stopped. Gas is present at both ends of the sample solution, and a plurality of sensors may be added for accurate measurement.

If the first liquid sensor (83) is unable to sense the liquid, the inhalation process of the sample solution can be repeated a specified number of times. If the liquid cannot be sensed during this process, it is determined that the sample solution of the substrate is lost, and an alarm process is performed.

Then, the first switching valve (81) is switched from the loading position to the injection position, and the sample solution loaded on the first sample pipe (82) is sprayed toward the analyzer side. At this time, the sample solution is supplied to the analyzer (70) by the second metering pump (86) connected to the first switching valve (81), and is supplied at a predetermined flow rate. When the sample solution to be loaded is pushed to the analyzer (70) side with deionized water at the time of spraying, the second metering pump (86) is used.

When the first liquid sensor (83) senses in the order of liquid and gas, it is determined that the sample solution moves toward the analyzer (70) side. Further, if the first liquid sensor (83) cannot sense the conversion from the liquid to the gas, it is judged to be abnormal, and an alarm is issued.

When the sample solution is introduced, both ends of the sample solution are gas, so that when the sample solution moves, the first liquid sensor (83) can be perceived to be converted into an off state - on state - off state or converted to an on state - off status. The movement of the sample solution is to push the deionized water to the second dosing pump (86) and move it together, and introduce the sample solution-gas-deionized water into the analyzer in sequence.

The substrate contaminant analysis device that transports the sample solution sucked by the nozzle (53) on the object substrate and passes through the flow path from the nozzle (53) to the analyzer (70), in addition to the sample solution introduction portion (80), The standard solution introduction unit (90) is included, and the standard solution introduction unit (90) is coupled by a T-shaped tube (94) in the middle of the flow path for transporting the sample solution, and introduced into the flow path as a calibrated standard solution.

The sample introduction unit (100) includes a sample solution introduction unit (80), and after loading the sample solution, sprays the sample solution toward the analyzer (70) side; the standard solution introduction unit (90), and the sample solution introduction unit (80) The flow path between the analyzers (70) is combined by a T-tube (94) and can be introduced as a calibrated standard solution.

The standard solution introduction unit (90) includes a second switching valve (91), a second sample pipe (92), a second liquid sensor (93), a third metering pump (95), and a second pump (96). The second sample loop (92) has a space for loading a standard solution, and the second switch valve (91) is combined with the second sample conduit (92) to form at least a load for loading the standard solution on the second sample conduit (92). The position and the valve at the injection position where the loaded standard solution is sprayed toward the T-tube (94) side. The second switching valve (91) may be an injection valve having multiple turns, for example, formed with 6 turns.

The second switching valve (91) includes: first and fourth crucibles coupled to the second sample conduit (92), third crucible coupled to the flow path of the supply standard solution, and a suction pump inhaled with the standard solution - the second The second pump, which is coupled to the pump (96), is connected to the fifth crucible of the T-tube (94), and is supplied with the sixth crucible of the deionized water that pushes the standard solution.

The sample introduction unit (100) adjusts the dilution ratio of the sample solution and the standard solution in a predetermined ratio, and introduces it into the analyzer (70) to automatically perform calibration.

Normally, the first switching valve (81) is located at the injection position, and often deionized water is introduced into the analyzer (70) through the first sample loop (81), which has the meaning of frequent cleaning.

The standard solution is allowed to flow out at the loading position of the second switching pump (91) at a predetermined time or before calibration, and the loaded standard solution is pushed with deionized water at the injection position by the third metering pump (95). .

The sample solution introduction portion (90) includes a deionized water transport portion (88) that pushes the sample solution with deionized water when the sample solution is sprayed toward the analyzer (70) side, and the standard solution is diluted for calibration, and is also used together. Deionized Water Transport Department (88). Etching the base point and the nozzle

Fig. 3 is a view showing the configuration of a nozzle for etching a dot substrate and a sample according to an embodiment of the present invention, wherein Fig. 3(A) is a front view and Fig. 3(B) is a cross-sectional view.

The nozzle (200) according to an embodiment of the present invention may be included in a substrate contamination analyzing device that analyzes a wafer or the like for analyzing an object substrate, and is analyzed, for example, as illustrated in FIG. One or both sides of the scanning module (52) may be used, or may be used by the nozzle (53) shown in FIG.

The nozzle (200) includes a nozzle tip (210) including a first nozzle tip (201) and a second nozzle tip (202), and a nozzle bracket (208) including a first bracket (205) , second bracket (206) and third bracket (207); nozzle body (203); sleeve (204); exhaust passage (214); space portion (215); nozzle head (209); (216); a solution supply pipe (212); a solution discharge pipe (211) and a purge gas supply port (219).

The nozzle tip (210) of the nozzle (200) includes a first nozzle tip (201) and a second nozzle tip (202) enclosing an outer peripheral surface of the first nozzle tip (201) through the first nozzle tip The spacing between (201) and the second nozzle tip (202) causes the purge gas to move and expel. The purge gas is introduced into the nozzle (200) through the purge gas supply port (219), and moves along the outer peripheral surface of the first nozzle tip (201) by the interval, and from the front end of the nozzle tip portion (210) toward the substrate discharge. The first nozzle tip (201) and the second nozzle tip (202) are coupled to the nozzle body (203), for example, by screws.

The function of the purge gas is to prevent the droplets of the solution for scanning from being discharged from the nozzle (200) from staying between the nozzle and the substrate and flowing out to the side when the nozzle (200) scans the substrate.

The nozzle holder (208) functions to support the nozzle, and a nozzle body (203) having a sleeve (204) and coupled to the nozzle tip portion (210) is disposed on the first bracket (205). The nozzle tip (210) is not fixed to the nozzle bracket (208) and is placed thereon.

According to an embodiment of the present invention, the nozzle tip portion (210) of the nozzle is mounted by self-weight, and therefore, the nozzle can be contacted due to uneven surface of the wafer during scanning, etc., but at this time, the nozzle tip portion (210) can be lifted up, and therefore, damage of the nozzle tip (210) or the substrate can be reduced.

The nozzle head (209) is coupled to the third bracket (207) of the nozzle holder (208) above the nozzle tip (210), a conduit for supplying the solution to the nozzle, and a solution for discharging from the nozzle. A pipe, a pipe for exhaust, and the like are combined with a nozzle head (209). A space portion (215) is formed between the nozzle head (209) and the nozzle body (203), and the space portion (215) is connected to the exhaust passage (214) and the communication port (216) inside the first nozzle tip (201). .

The solution supply pipe (212) is a flow path formed inside the nozzle tip portion (210) and is a pipe for supplying a solution to the nozzle. When performing on-plane scanning, the scanning solution is supplied onto the substrate by the solution supply pipe (212), and the etching solution for etching and the diluted solution-scanning solution or etching solution for diluting the etching solution are irradiated to the substrate in the depth direction scanning. Side supply.

The solution supply conduit (212) in Fig. 3 utilizes a single conduit, but it is also possible to transport the etching solution and the scanning solution to the front end of the nozzle tip (210) or a specific portion of the nozzle using separate conduits that are different from each other.

The solution discharge pipe (211) is a flow path formed on the inner side of the nozzle tip portion (210), and sucks a sample solution for collecting contaminants from the analyte substrate, and, for example, as shown in Fig. 2, forms a sample introduction portion. (100), the inhaled sample solution is delivered to the analyzer (70) by a flow path.

The front end of the pipe-solution discharge pipe (211) for suction of the sample solution is formed below the front side of the substrate side of the substrate supply pipe (212) for providing an etching solution or a scanning solution, preferably The front end of the solution discharge conduit (211) is located down to the end of the nozzle tip (210).

The exhaust duct (213) is at least exhaust of the exhaust passage (214), one end is connected to the exhaust passage (214), and the other end is connected to an exhaust device (not shown) and coupled to the nozzle of the nozzle (200). Head (209).

The exhaust passage (214) is formed in the longitudinal direction by the nozzle tip portion (210) in more detail from the inner side of the first nozzle tip (201) as a passage for exhausting gas which occurs during etching of the analyte object substrate.

Further, the exhaust passage (214) is connected to the space portion (215), and the space portion (215) is again communicated with the outside of the nozzle through the communication port (216). The exhaust duct (213) is connected to an exhaust device (not shown), and the fluid that has been taken into the space portion (215) is discharged, and the gas that has risen through the exhaust passage (214) can be sucked and discharged.

When dot substrate etching or the like is performed for scanning in the depth direction, the substrate is etched using an etching solution, and at this time, a considerable amount of gas is generated in the droplet between the tip end portion of the nozzle and the substrate.

According to an embodiment of the present invention, the gas generated from the front end portion of the nozzle is directly discharged from the front side by the exhaust passage (214), thereby reducing the diffusion of gas to the periphery of the scanning module and improving the effectiveness of gas discharge. .

Hereinafter, a point substrate etching and a sample generation process using a nozzle according to an embodiment of the present invention will be described.

Figure 4 is a drawing showing a dot substrate etching and sample generation process in accordance with an embodiment of the present invention.

First, in a state where the wafer is loaded on the scanning table (51: see Fig. 1), the nozzle is moved to a position where scanning including dot substrate etching is to be performed, and it is purified by nitrogen gas (N2) or the like. A tantalum oxide film or other film may be formed on the surface of the wafer. (Refer to Figure 4(A)). Further, the wafer may be previously transferred to the scanning table (51) by removing all or a part of the VPD unit (40) or the like.

And, for the surface contaminant recovery, the droplets of the scanning solution are supplied onto the wafer between the nozzle and the wafer, and the sample solution of the contaminant is trapped by the supplied scanning solution (refer to FIG. 4(B)), It is sent to the analyzer (70) through the solution discharge pipe (211), and the surface contamination is analyzed by the analyzer (70). The scanning solution can be a solution comprising hydrofluoric acid, hydrogen peroxide and deionized water.

Further, in order to analyze the substrate of the substrate, droplets of the etching solution and droplets of the diluting solution are sequentially supplied to the wafer between the nozzle and the wafer through the solution supply pipe (212) at predetermined time intervals. At this time, the etching solution is a base solution for etching the analyte substrate-wafer, and may be a solution containing hydrofluoric acid, nitric acid and deionized water. The dilute solution is a scanning solution or deionized water to which a diluted etching solution is added.

When the etching solution is supplied to the tip end of the nozzle, the substrate of the substrate can be etched (see FIG. 4(C)), and then a scanning solution or the like is supplied, the etching solution is diluted, and etching is stopped (see FIG. 4(D)). In order to adjust the depth of the etching, the time interval between the supply of the droplets of the etching solution and the droplets of the scanning solution can be adjusted. And, the etching solution and the scanning solution are mixed, and the sample solution containing the contaminant is sent to the analyzer (70) through the solution discharge pipe (211), and the contaminant in the sample solution is analyzed by the analyzer (70).

The scanning solution is used for measuring surface contamination, and is used for accurately ending the etching reaction of the etching solution by dilution of the etching solution, and suppressing the additional reaction. If only the etching solution is used, the amount of the sample (sample solution) may be less, but, by The scanning solution is diluted to increase the amount of the sample, thereby making the analysis of the analyzer easier.

Also, if the scanning solution is diluted, a matrix characteristic similar to that of the scanning solution can be obtained, and an analysis condition similar to the calibration condition is obtained. Using the scanning solution as a base material, the analyzer is calibrated. If only the etching solution is used as a base material to analyze the sample solution containing the contaminant by the analyzer, the error of the analysis result is greater because it is different from the calibration conditions.

Further, if only the etching solution is used, the contaminant is not easily inhaled together with the solution, and the phenomenon of remaining on the substrate occurs. However, by performing the dilution with the private scanning solution, the above-described residual phenomenon can be reduced.

Moreover, in order to obtain a doping profile in the depth direction at one location of the wafer, the supply of the etching solution and the scanning solution and the transport and analysis of the sample solution are repeatedly performed multiple times in a state of fixing the position on the plane of the nozzle. . The processes illustrated in the 4th (C) and 4th (D) drawings are repeatedly executed. Thereby, the depth is increased along the depth direction of the wafer to obtain a sample solution, and a deep doping profile of the contaminant can be obtained at a specific point of the wafer. At this time, the position of the nozzle in the plane is fixed, but the position in the vertical direction is closer to or lower than the wafer ground. Further, before the next etching is performed after the sample solution is transported, the nozzle washing process of the washing nozzle is added.

In the above, the surface analysis may be omitted, and the etching solution for point bulk eching may be, for example, a hydrofluoric acid, a mixed solution of nitric acid and deionized water, and the concentration may be adjusted to limit the etching rate (etching rate), or may be added. Other liquid medicines such as acetic acid.

Further, as an automatic limiting method of the etching depth, a method of controlling the concentration or volume of the etching solution can be used. If the concentration and volume of the etching solution are adjusted, the consumption of the reactants in the chemical solution can be completed without an additional reaction, so that the etching reaction naturally ends.

The etching solution and the scanning solution are placed in a spot etching liquid container (131) and a scanning solution container (121), and then delivered to the nozzle by using a valve and a pump system and a flow path as shown in FIG. 2, and passing through the solution supply pipe from the nozzle (212) The equal flow path is delivered to the front end of the nozzle.

Moreover, instead of using the scanning solution, only the etching solution is used to analyze the contaminants of the substrate, the droplets of the etching solution for etching the wafer are supplied onto the wafer, and the substrate of the wafer is etched, and then discharged by the nozzle and the solution. The pipe (211), the sample introduction unit (100), and the like are analyzed by an analyzer.

Further, when some or all of the supply of the etching solution and the scanning solution and the transportation and analysis of the sample solution are performed, the position on the plane of the nozzle can be moved. As described above, the dot base doping pattern or the like is performed in a state where the position of the nozzle in the plane is fixed, and the dot depth doping profile is obtained. However, the entire nozzle or a part of the substrate etching and scanning can be performed using the same nozzle. To this end, the rotation of the wafer and the movement of the nozzle are combined to scan the substrate of the wafer in a comprehensive, circular shape, limited shape, or the like of the wafer.

Further, after the etching solution or/and the scanning solution are supplied, a process of reducing the volume of the droplets by the lamp or drying may be additionally employed. For example, if the volume of the etching solution is large, it may be subjected to a recovery analysis using a halogen (Halogen) lamp or an ultraviolet (IR) lamp or the like, and then a scanning solution or the like is supplied. For the base gas phase decomposition of crystalline circle

The conventional VPD method can only perform contamination analysis on the wafer surface, but the metal present in the substrate region is a cause of defects such as electrical abnormalities of the device. Therefore, it is necessary to perform measurement on the inside of the substrate region, so that the wafer itself is etched.

The etching method is divided into a method of performing only a specific point and a method of etching a global full of the wafer as described above. If the wafer is subjected to overall etching, an etching method using a chemical solution (solution) is widely used. However, if the device of the present invention is a device for performing contamination analysis, there is a problem that contaminants are also lost during liquid processing, and therefore, , can not be applied. Further, in order to etch the substrate to the wafer by gas phase decomposition, the etching speed and efficiency are high, and the problem that the etching gas is condensed and dropped on the wafer is prevented.

5 is a cross-sectional view showing a gas phase decomposition unit for a substrate according to an embodiment of the present invention; and FIG. 6 is a cross section of an upper portion of a chamber in a gas phase decomposition unit for a substrate according to an embodiment of the present invention. Figure.

A gas phase decomposing unit according to an embodiment of the present invention is included in a substrate contaminant analyzing device for trapping and analyzing contaminants present in a substrate of an object wafer, in order to analyze an object before the above-mentioned trapping The substrate of the wafer is subjected to gas phase decomposition.

The substrate gas phase decomposition unit (300) includes a chamber (310), a wafer carrier plate (340), a wafer holder (330), a wafer holder rotation driving portion (331), and a wafer clip raising/lowering driving portion ( 332) constitutes.

The wafer carrier plate (340) functions to support the wafer when the wafer is introduced into the chamber (310), and the wafer holder (330) fixes the wafer (320) by the force of a vacuum pump or the like, and is executed to be mounted on the wafer. The function of wafer lifting in the chamber (310). The wafer holder rotation driving portion (331) causes the wafer holder (330) to be rotationally driven, and the wafer clip raising/lowering driving portion (332) causes the wafer holder (330) to be driven up/down.

The wafer (320) is fixed by the wafer holder (330), and the etching gas is introduced into the etching gas introduction portion (311) on the upper portion of the chamber (310) in order to etch the reaction position (A) in the upper portion. After the etching is completed, it is treated with hydrofluoric acid (HF) gas to remove the surface film. Further, after the etching treatment is completed, a non-reactive gas such as N2 or Ar is used for purification treatment to remove the internal toxic gas.

The chamber (310) has an etching gas introduction portion (311) for introducing an etching gas toward the center upper portion. Moreover, when the analyte wafer (320) is raised by the wafer holder (330), an etching gas reaction space (312) is formed between the wafer (320) and the upper side inner surface (313) of the chamber (310). And, the etching gas reaction space (312) has a shape in which the center portion is higher and the peripheral portion is lower and lower. And, in the etching gas reaction space (312), the upper surface of the wafer holder (330) or the upper surface of the analyte wafer (320) and the upper surface inner surface (312) of the chamber (310) are formed for etching. Gas leaking gap (C).

The etching reaction has a problem of dilution if the reaction space is large, so that the reaction is not smooth, and therefore, a reaction space smaller than that of the chamber is provided. The etching reaction efficiency is increased in a defined space. The etching gas is moved from the upper center of the wafer to the side surface to be reacted, and in order to improve the etching uniformity, a reaction space having a lower central portion and a lower side is formed, and the wafer is rotated during etching.

Further, in order to improve the uniformity, the head can be placed on the upper portion of the reaction space, and the wafer holder (330) on which the wafer is mounted can be adjusted from the top to the bottom at a fine height to adjust the volume of the etching gas reaction space. The effect of the amount of the etching gas leaking to the outside of the reaction space can be adjusted, whereby the improvement of the reaction efficiency and the adjustment of the reaction rate can be simultaneously achieved.

According to an embodiment of the present invention, an etching gas reaction space (312) is formed between the wafer (320) and the upper side inner surface (313) of the chamber (310), thereby performing gas phase decomposition on the substrate. It can improve the reaction efficiency and adjust the reaction rate. Further, according to an embodiment of the present invention, the reaction space in which the center portion of the etching gas reaction space (312) is high and the peripheral portion is lower and lower is formed, whereby the etching uniformity can be improved.

The interior of the wafer holder (330) contains a heater for heating the analyte wafer, and a heater can be attached to the upper cover of the chamber (310). Therefore, the reaction efficiency of the etching gas is improved, and the effect of condensation of the etching gas is improved.

Figure 14 is a cross-sectional view showing an upper portion of a chamber in a gas phase decomposition unit for a substrate according to another embodiment of the present invention.

The gas phase decomposition unit includes an etching gas introduction portion (911) for introducing an etching gas, and a chamber (910) having an etching gas reaction space (912) for etching the gas to react when the wafer is sandwiched at the reaction position (A), and The etching gas introduction portion (911) is formed in the form of a pipe or a pipe in the etching gas reaction space (912). Further, an etching gas injection hole is formed in the side direction of the pipe or the pipe.

The etching gas is supplied inside the etching gas reaction space (912) through the etching gas injection hole, and the etching gas reaction space (912) may be a flat structure. A gas introduction path of a pipe or a pipe is formed inside the etching gas reaction space (912), and an etching gas injection hole is formed in a side surface perforation of the path so that the etching gas can be introduced into the inside of the etching gas reaction space (912).

One or more perforations in the path are formed, and in order to improve the uniformity of etching, the number of perforations can be appropriately adjusted, and the perforations can be formed in the lower portion of the path (ie, the side perpendicular to the wafer surface), but at this time There may be a problem that the result of the condensation phenomenon affects the wafer (920).

In an embodiment of the invention, an etching gas ejection hole is formed on a side surface of the path, and is perforated on the side surface, thereby reducing a direct ejection reaction of the etching gas and the wafer, so that the etching gas diffuses inside the etching gas reaction space (912). The uniformity is improved, and it is possible to reduce the phenomenon that the fine condensate which may exist inside the pipe or the pipe exists at a position lower than the etching gas injection hole and falls to the wafer.

Hereinafter, a process of gas phase decomposition of a substrate will be briefly described using a gas phase decomposition unit for a substrate according to an embodiment of the present invention.

The wafer holder (330) maintains a specific temperature before being driven by the heater, opens a gate, causes the wafer carrier (340) to rise, and loads the wafer (320). Moreover, the wafer carrier plate (240) is lowered to the loading/unloading position (B), the wafer is loaded on the wafer holder (330), the vacuum of the wafer holder (330) is turned on, and the gate is closed.

Then, the wafer holder (330) is raised to move the wafer to the reaction position (A), the wafer is rotated, and an etching gas is supplied to perform substrate etching. After the substrate etching of the desired depth is completed, the supply of the etching gas is blocked, and if necessary, the retentate is treated by a hydrofluoric acid (HF) gas or the like, and purified by using N2 (or a non-reactive gas such as Ar), so that the etching is not performed. The reaction discharges the remaining reaction gas in the chamber and the rotation of the terminal wafer. Moreover, the wafer holder (330) is lowered, moved to the loading/unloading position (B), the wafer carrier plate (340) is raised, the gate is opened, and the wafer is unloaded outside the chamber.

Fig. 7 is a view schematically showing an etching gas supply portion for vapor phase decomposition of a substrate according to an embodiment of the present invention.

An etching gas supply portion (400) according to an embodiment of the present invention is included in a substrate contaminant analysis device for trapping and analyzing contaminants present in a substrate of an analysis object wafer, and more specifically, in a contaminant Prior to the capture, the gas is supplied to the gas phase decomposition unit for gas phase decomposition of the substrate of the analyte wafer.

The etching gas supply portion includes an etching liquid container (410), a carrier gas supply line (421), an etching gas transfer line (422), a heater (430), a flow rate adjuster (441, 442), and valves (451 to 454).

The etchant container (410) performs a function of accommodating the etchant, and the flow rate adjuster (441) and the valve (451) adjust the flow rate and the open and close carrier gas supply line (421) functions to impregnate the etchant container at one end (410). The state in the etching liquid supplies a carrier gas to generate a foam, and the function performed by the etching gas transfer line (422) is a function of supplying an etching gas vaporized from the etching liquid container (410) to the gas phase decomposing unit.

The etching solution is a solution containing hydrofluoric acid and nitric acid, and hydrofluoric acid and nitric acid-etching gas are generated, and a sufficient vapor cannot be generated by bubbling alone. Therefore, the following is added. Device.

The etchant vessel (410) is heated by a heater (430) which is a device that heats at a predetermined temperature in order to more transport the substances participating in the reaction in the chemical.

Further, a porous cover is coupled to the end of the carrier gas supply line (421). The bubbling can be carried out only through the pipe of the carrier gas supply line (421), but in order to make the size of the generated foam smaller and increase the surface area of the bubbling gas and the solution contact portion, the porous cover is combined.

Further, during the process of transporting the etching gas into the chamber, problems such as transfer efficiency and condensation may occur. Therefore, the etching gas transfer line (422) is heated by a heater (not shown) so that the cross-sectional area of the flow path is 0.1. More than cm. If the cross-sectional area is 0.1 cm or less, the reaction efficiency is lowered due to condensation or the like. Further, a valve (452) is formed on the etching gas supply line (422), whereby the problem caused by the supply of the etching gas when the wafer is loaded into the chamber can be removed, and the connection with the etching gas transfer line (422) can be utilized. A purge line (423), a flow regulator (442), and a valve (453) remove chemicals remaining inside the conduit.

Further, after the etching liquid of the etching liquid container (410) is supplied and used in one use, the valve (454) is used to wash the exhaust gas of the drain pipe by deionized water or the like, thereby preventing the continuous heating of the chemical liquid. Safety issues and deterioration, and changes in etching conditions.

Fig. 8 is a view schematically showing an etching gas supply unit for vapor phase decomposition of a substrate according to another embodiment of the present invention.

An etching gas supply portion (500) according to other embodiments of the present invention is included in a substrate contaminant analyzing device for trapping and analyzing contaminants present in a substrate of an analysis object wafer, and more specifically, in order to Prior to the trapping of the contaminants, an etching gas is supplied to the gas phase decomposition unit for gas phase decomposition of the substrate of the analyte wafer.

The etching gas supply portion (500) includes an etching liquid container (510), a spray chamber (570), a carrier gas supply line (521), an etching gas supply line (522), a purge gas supply line (523), and a heater (530) The spray device (560), the flow regulator (541, 542) and the valves (551-554) are formed.

The function of the etchant container (510) is to accommodate the function of nitric acid and an etchant containing hydrofluoric acid. The function of the spray device (560) is to pass the carrier gas supply line (521), the flow regulator (541) and the valve (551). The flow of the supplied carrier gas generates an aerosol from the etching solution of the etching solution container (510).

The spray chamber (570) is provided as a space for the generated aerosol, and an etching gas vaporization line (522) opened and closed by a valve (552) supplies the etching gas vaporized from the spray chamber (570) to the gas phase decomposition unit.

A sufficient vapor cannot be generated only by bubbling, and therefore, the following device is added. When the strong carrier gas flows, the spray device (560) sucks the etching liquid from the etching solution container (510) and mixes it with the carrier gas to generate a fine aerosol. The etchant is supplied to the spray device by magnetic suction of the gas stream or suction by a pump (not shown). When the etching liquid of the etching liquid container (510) is supplied to the atomizing device, the flow rate of the carrier gas supplied to the atomizing device (560) through the carrier gas supply line (521) is small, and an aerosol can be generated.

The spray chamber (570) is heated by a heater (530) to have an effect of making the sprayed fine aerosol particles more vaporized. The spraying method does not directly heat the chemical solution, and therefore, the safety can be improved, and the etching gas in a fresh state can be supplied in a small amount (0.1 to 10 ml/min). The carrier gas used for the spray also functions as a carrier for transporting the etching gas to the gas phase decomposition unit.

Further, during the process of transporting the etching gas into the chamber, problems such as transfer efficiency and condensation may occur. Therefore, the etching gas transfer line (522) is heated by a heater (not shown) and the cross-sectional area of the flow path is made. It is 0.1 cm or more. When the cross-sectional area is 0.1 cm or less, the reaction efficiency is lowered due to condensation or the like. Further, a valve (552) is formed at the etching gas supply line (522), thereby removing a problem caused by the supply of the etching gas when the wafer is loaded into the chamber, and using a purge tube connected to the etching gas transfer line (522) (purge line) (523), flow regulator (542) and valve (553) remove chemical residues remaining inside the pipe.

According to the etching gas supply unit for gas phase decomposition according to the embodiment of the present invention, a sufficient etching gas capable of performing gas phase decomposition of the substrate is generated, and the transmission efficiency is improved, and problems such as condensation are reduced. Round crystal recovered by

The substrate contaminant analysis device receives the light monitoring wafer in the introduced semiconductor manufacturing process and decomposes the gas phase, and then analyzes the light monitoring wafer through the analyzer using the nozzle. Conventionally, the contamination analysis of a wafer by ICP-MS or the like is classified into a failure analysis and a completed wafer exhaust gas by gas phase decomposition or the like.

However, according to an embodiment of the present invention, in order to recycle the photo-monitoring wafer using the trapping of the contaminant or the like, the recycling unit (60) is used to process the recycling solution containing the acid series or the salt-based series of chemical substances. The chemical series of chemicals contain hydrofluoric acid and hydrogen peroxide, and the chemical series of the salt series contain ammonium hydroxide and hydrogen peroxide.

Figure 9 is a cross-sectional view of a recycling unit in accordance with an embodiment of the present invention.

The recycling unit (60) includes an upper nozzle (69: illustrated in a separated state), an upper nozzle mounting portion (63), a lower nozzle (64), a wafer carrier plate (61), a wafer vacuum chuck (62), The upper nozzle rotation driving unit (66), the vacuum chuck driving unit (67), the inclined portion (65), and the like.

The upper nozzle (69) is attached to the upper nozzle mounting portion (63), and the above-described recovery solution is sprayed onto the upper surface of the light monitoring wafer for recycling, and the upper nozzle rotation driving portion (66) rotationally drives the upper nozzle. The lower nozzle (64) ejects the above-described recovery solution onto the lower surface of the photo-monitoring wafer, and is rotationally driven by the lower nozzle rotation driving unit (68). The recycling unit (60) monitors both sides of the wafer by light through the nozzles formed at the upper and lower portions.

Also, the recycling unit (60) includes a chamber, and the inner bottom portion of the chamber includes a structure-inclined portion (65) that is inclined to one side, which helps to recycle the treated water after the solution is recovered.

According to an embodiment of the present invention, in order to recycle the optical monitoring wafer for performing scanning or the like, a recycling processing step of processing a solution containing at least an acid series or a salt-based chemical substance in the chamber, and a recycling processing step This is performed by spraying the above solution onto both sides of the light monitoring wafer.

In the process of recycling unit (60), after the light monitoring wafer is introduced into the process chamber and mounted on the rising wafer carrier (61), the wafer loading plate (61) is lowered to close the door. Further, the upper nozzle moves toward the center of the wafer to eject the chemical liquid, the wafer rotates at a low speed, and the upper nozzle also rotates at a constant angle. After the chemical liquid is uniformly sprayed through the upper nozzle, the chemical liquid is similarly ejected to the lower portion of the wafer.

Moreover, the upper and lower portions of the wafer are rinsed with deionized water to rotate the wafer at a high speed, and the nitrogen gas is sprayed for drying. After drying, the wafer carrier plate is raised, the gate is opened, and the wafer is taken out.

According to an embodiment of the present invention, it is possible to recycle the optical monitoring wafer that has been discarded in the past, and therefore, the cost of the optical monitoring wafer can be greatly saved.

Fig. 10 is a cross-sectional view showing a recycling unit according to another embodiment of the present invention; and Fig. 11 is a view showing the operation position of each of the wafer holder elements of the recycling unit.

The recycling unit is configured to receive a wafer introduced into a semiconductor manufacturing process, perform gas phase decomposition, and then transport the solution that collects the contaminant to the analyzer and analyze the substrate by the analyzer.

The recycling unit is configured to recycle the light monitoring wafer that completes the trapping of the contaminant, and is processed by a solution containing at least an acid series or a salt-based chemical in a state of being clamped by the wafer holder.

The wafer holder comprises a bracket (630) and a wafer holder (631), and the bracket (630) is driven by the wafer clamp ascending/descending driving unit (652) to be driven up/down and rotated by the wafer holder. The part (653) rotates.

The wafer holder (631) is rotatably fixed to the bracket (630), has a contact portion (633) and a holder magnet (634) that are in contact with the side of the wafer, and the wafer holder (631) is formed. The eccentricity causes the contact portion (633) to rotate in the direction of the side surface of the pressurized wafer centering on the rotation center (632) when the wafer holder is rotated.

The holder magnet (634) is mounted to the wafer holder (631). In order to interact with the holder magnet (634), the upper portion of the chamber (610) is fixedly mounted to include the upper magnet (641) and the lower magnet ( 642) The external magnet.

The external magnet includes an upper magnet (641) and a lower magnet (642), and the lower magnet (642) presses the wafer to the contact portion (633) when the wafer holder and the wafer are located at the reaction position (B) where the recycling process is performed. The direction of the side faces applies force to the gripper magnet (634), and the upper magnet (641) is directed to the contact portion (633) when the wafer holder and wafer are placed at the loading/unloading position (A) for loading or unloading the wafer. A force is applied to the gripper magnet (634) in a direction away from the sides of the wafer. The lower magnet (642) is fixedly mounted to the lower portion of the chamber (610), and the upper magnet (641) is fixedly mounted to the side of the chamber (610). The loading/unloading position (A) is located between the introduction position (C) and the reaction position (B) where the wafer is introduced into the chamber (610).

The recycling unit illustrated in Fig. 9 is a structure in which the lower portion of the wafer is fixed by a vacuum chuck, and therefore, the portion of the lower portion of the wafer placed in the vacuum chuck is unprocessable. In general, in order to deal with the structure in which the lower portion as a whole is sandwiched on the side surface of the lower portion of the wafer, the conventional technique has various driving portions installed inside the chamber, and there are problems and structures for inconvenience in maintenance management, corrosion, and contamination. The problem of complexity.

A wafer holder (631) according to an embodiment of the present invention is disposed on the outer periphery of the wafer holder, and is rotatable about the center of rotation itself, and uses an action by a magnetic force and an action by a center force in parallel. The angle of rotation of the wafer holder (631) can be mechanically limited.

The wafer (620) is sandwiched by the wafer holder (631) from the side, and the upper and lower surfaces are in a non-contact state, the upper portion passes through the upper nozzle (not shown), and the lower portion passes through the lower nozzle or is carried on the wafer. A nozzle mounted on a plate (670) or the like is treated by spraying a recovery solution, deionized water, dry gas, or the like.

When the wafer holder is in the loading/unloading position (A), a repulsive force is generated from the upper magnet (641) mounted on the side of the chamber (610), and is subjected to a rotational force so that the upper portion of the wafer holder (631) The distance from the center of the wafer and the lower portion approach the center side of the wafer, thereby ensuring that the wafer can be easily mounted in the space of the wafer holder (631).

And, when the wafer clip is lowered to the reaction position (B), a repulsive force is generated with the lower magnet (642), and at this time, the lower portion of the wafer holder (631) is pushed to the opposite direction to the center of the wafer, The upper portion of the wafer holder (631) receives a force that rotates toward the center of the wafer. Thus, the contact portion (633) of the wafer holder (631) is capable of pressing the side of the wafer. When the wafer clip is rotated at a high speed by the magnetic force of the lower magnet (642) and the centering force by the eccentricity, the wafer can be stably held.

Hereinafter, the action of the recycling unit according to another embodiment of the present invention will be briefly explained.

First, the gate of the recycling unit is turned on, so that the wafer holder is raised to the loading/unloading position (A) standby, and the wafer carrier plate (670) is raised to the introduction position (C), and the wafer is loaded.

Moreover, the wafer carrier plate (670) is lowered, and the gate is closed, so that after the wafer holder is lowered, the upper nozzle is moved to the center, and the recycling solution is discharged for processing. The recycling solution is produced by immediate dilution by a flow regulator. The recycling solution usually uses hydrofluoric acid and hydrogen peroxide or an acid series containing hydrochloric acid or a chemical series containing a series of ammonium hydroxide and hydrogen peroxide. While the wafer is being rotated, the upper nozzle is also rotated (about 90 to 120°), and the processing for the lower portion of the wafer is performed similarly after the upper processing is completed or at the same time.

Further, deionized water is rinsed on the upper and lower portions of the wafer to increase the rotational speed of the wafer, and a gas such as N2 is sprayed (spin-dried) to be dried.

After the processing is completed, the wafer holder is raised to the loading/unloading position (A), and the wafer loading plate (670) is raised to the introduction position (C), the gate is opened, and the wafer is unloaded.

According to an embodiment of the present invention, by fixing only the side surface of the wafer, it is possible to perform the chemical liquid treatment on both sides, and the problems of inconvenience in warranty management, corrosion and contamination are reduced, and the complexity of the structure is reduced, and the high-speed rotation can also be performed. Stabilize the wafer. Gas phase decomposition improved cell structure

Fig. 12 is a view showing a wafer holder member having an improved structure formed in a gas phase decomposition unit according to an embodiment of the present invention.

The wafer chuck component (700) is for arranging the wafer (760) when the gas phase is decomposed before the trapping of the contaminant, and includes at least the rotatably configured bracket body (750) outside the wafer carrier board (740). And a bracket (710) coupled to the bracket body (750). The bracket (710) is coupled to the bracket body (750) and extends radially from the center of rotation of the wafer clamp member (700).

A vacuum chuck nozzle (720) is attached to the end of the bracket (720). The vacuum chuck nozzle (720) functions to vacuum-pinch and hold the wafer in a state where the lower portion of the wafer is in contact with each other when the wafer is placed. A flow path to the vacuum chuck nozzle (720) for vacuum suction is provided on the bracket (710). The lower portion of the wafer (760) does not contact the wafer holder member (700) except for the vacuum chuck nozzle (720).

According to the wafer chuck element (700) described above, only the dots at the lower portion of the wafer are in contact with each other, and the wafer can be held by vacuum. Therefore, most of the lower portion of the wafer is exposed, and here, the gas is passed through. When the phase decomposition is treated with an etching gas, the gas phase decomposition can be simultaneously performed for most of the lower portion of the wafer.

Fig. 13 is a view showing a wafer holder member of an improved structure constituted by a gas phase decomposition unit according to another embodiment of the present invention.

The wafer chuck component (800) houses the wafer (850) when the gas phase is decomposed before the trapping of the contaminant, and includes at least the rotatably constructed bracket body (850) outside the wafer carrier board (840). It is constructed with a bracket (810) that is coupled to the bracket body (850). The bracket (810) is coupled to the bracket body (850) and extends radially from the center of rotation of the wafer holder member (800).

The carrier pin (820) is mounted on the bracket (810), and the wafer is placed in a state where the lower portion of the wafer (860) is in contact with the wafer, and the wafer guide (830) is mounted on the bracket (810). The side of the wafer. A carrier pin (820) and a wafer guide (830) are mounted at the end of the carrier (810), and a wafer guide (830) is mounted on the outside of the carrier pin (820).

The lower portion of the wafer (860) is not in contact with the wafer holder member (800) except for the portion that is in contact with the carrier pin (820). According to the wafer chuck member (800) as described above, the wafer can be placed in a state where only the dots at the lower portion of the wafer are in contact, and therefore, most of the lower portion of the wafer is exposed, and here, the gas is passed. When the phase decomposition is treated with an etching gas, the gas phase decomposition can be simultaneously performed for most of the lower portion of the wafer.

In the conventional gas phase decomposing unit, the lower portion of the wafer is fixed by a vacuum chuck, so that a considerable portion of the lower portion of the wafer is blocked by the vacuum chuck, and this portion cannot be decomposed by gas phase. Therefore, the lower portion of the wafer is a gas phase decomposed portion and a portion which cannot be decomposed by gas phase, and there is a problem that the wafer is stressed by the gas phase decomposition process, and it becomes a barrier factor for recycling of the wafer.

According to an embodiment of the present invention, a wafer chuck component and a vapor phase decomposing unit having the same, except for a vacuum chuck nozzle or a portion where a carrier pin contacts, uniformly etch the entire lower portion of the wafer, thereby greatly reducing the wafer The stress and the ability to recycle the wafer.

According to an embodiment of the invention, the nozzle tip of the nozzle is mounted by its own weight, so that even if the surface of the wafer is uneven during scanning, the nozzle tip can be lifted upward, and the nozzle tip or substrate can be lowered. Damage.

According to an embodiment of the present invention, the gas generated from the tip end portion of the nozzle is directly removed from the upper side by the exhaust passage, whereby the diffusion of the gas to the periphery of the scanning module can be reduced, and the effectiveness of the gas discharge can be improved.

According to an embodiment of the invention, it is possible to analyze the contaminants in the bulk of the wafer and to obtain a doping profile from a specific location to the depth of the wafer.

According to an embodiment of the present invention, the etching solution is diluted with the scanning solution, so that the amount of the sample can be increased as compared with the use of only the etching solution, and the analysis of the analyzer can be performed more easily. Further, in the conventional use of only the etching solution, there is a phenomenon that contaminants are not easily adsorbed together with the solution and remain on the substrate. However, the present invention can reduce the residual phenomenon as described above.

According to an embodiment of the present invention, dilution is performed using a scanning solution, and a matrix similar to the scanning solution can be obtained, and an analysis condition similar to a calibration condition is obtained.

According to an embodiment of the present invention, an etching gas ejection hole is formed on a side surface of the etching gas introduction path to reduce a direct ejection reaction of the etching gas and the wafer, and the etching gas is improved in uniformity when diffused inside the etching gas reaction space, and The phenomenon that the fine condensate existing inside the pipe or the pipe is located at a lower position than the etching gas injection hole and falls to the wafer is reduced.

According to an embodiment of the present invention, an etching gas reaction space is formed between the wafer and the inner surface of the upper side of the chamber, thereby improving the reaction efficiency in the gas phase decomposition of the substrate and adjusting the reaction speed. Further, according to an embodiment of the present invention, the reaction space in which the center portion of the etching gas reaction space is high and the peripheral portion becomes lower and lower is formed, and the etching uniformity is improved.

According to an embodiment of the present invention, the inside of the wafer holder or the upper cover of the chamber includes a heater for heating the analyte wafer, thereby improving the reaction efficiency of the etching gas, improving the condensation of the etching gas, and the like.

According to the etching gas supply unit for gas phase decomposition according to the embodiment of the present invention, an etching gas capable of sufficiently performing phase decomposition of the substrate is generated, and the transmission efficiency is improved, and the condensation or the like is lowered.

According to an embodiment of the present invention, it is possible to recycle the optical monitoring wafer that has been discarded in the past, and the cost of the optical monitoring wafer can be greatly saved.

According to an embodiment of the present invention, it is possible to reduce the inconvenience of warranty management, to be resistant to corrosion and contamination, to reduce the complexity of the structure, and to stably fix the wafer even at high speed.

The wafer holder element and the gas phase decomposition unit including the same according to an embodiment of the present invention uniformly etch the lower portion of the wafer in addition to the portion of the vacuum chuck nozzle or the carrier pin contact, thereby greatly reducing the stress of the wafer .

In conclusion, the present invention has been disclosed in the above preferred embodiments, and is not intended to limit the present invention. A person skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

10‧‧‧Loading

20‧‧‧ Robot

30‧‧‧ Positioning unit

40‧‧‧VPD unit

50‧‧‧ scan unit

51‧‧‧ scanning station

52‧‧‧ scan module

53‧‧‧ nozzle

60‧‧‧Recycling unit

70‧‧‧Analyzer

80‧‧‧Sample Solution Introduction Department

81‧‧‧1st switch valve

82‧‧‧1st sample pipeline

83‧‧‧1st liquid sensor

90‧‧‧Standard solution introduction

91‧‧‧2nd switch valve

92‧‧‧2nd sample pipeline

93‧‧‧Second liquid sensor

94‧‧‧T-tube

100‧‧‧Sample introduction department

121‧‧‧Scan solution container

131‧‧‧ point etchant container

201‧‧‧First nozzle tip

202‧‧‧second nozzle tip

203‧‧‧Nozzle body

204‧‧‧ casing

205‧‧‧1st bracket

206‧‧‧2nd bracket

207‧‧‧3rd bracket

208‧‧‧Nozzle bracket

209‧‧・Nozzle head

210‧‧‧Nozzle tip

211‧‧‧ solution discharge pipe

212‧‧‧Solution supply pipeline

213‧‧‧Exhaust pipe

214‧‧‧Exhaust passage

215‧‧‧ Space Department

216‧‧‧Connecting port

300‧‧‧ Gas phase decomposition unit for substrate

310‧‧‧ chamber

320‧‧‧ wafer

311‧‧‧etching gas introduction

312‧‧‧etching gas reaction space

330‧‧‧ wafer clip

340‧‧‧wafer carrier board

400‧‧‧ Etching Gas Supply Department

410‧‧‧etching fluid container

421‧‧‧Carrier supply line

422‧‧‧etching gas transmission line

430‧‧‧heater

500‧‧‧ Etching Gas Supply Department

510‧‧‧etching fluid container

530‧‧‧heater

560‧‧‧Spray device

570‧‧‧ spray room

700‧‧‧ wafer clip assembly

800‧‧‧ wafer clip assembly

1 is a plan view showing an overall configuration of a substrate contaminant analyzing device according to an embodiment of the present invention; and FIG. 2 is a view schematically showing supply in a substrate contaminant analyzing device according to an embodiment of the present invention. And a drawing of a flow path, a valve, and the like for conveying a scanning solution/etching solution, a sample solution, a standard solution, and the like; and FIG. 3 is a view showing a configuration of a nozzle for obtaining a point base etching and a sample according to an embodiment of the present invention. 3(A) is a front view, FIG. 3(B) is a cross-sectional view; FIG. 4 is a view showing a dot substrate etching and a sample generating process according to an embodiment of the present invention; A cross-sectional view showing a gas phase decomposition unit for a substrate according to an embodiment of the present invention; and a sixth sectional view showing an upper portion of a chamber in a gas phase decomposition unit for a substrate according to an embodiment of the present invention; FIG. 8 is a view schematically showing an etching gas supply unit for vapor phase decomposition of a substrate according to an embodiment of the present invention. FIG. 8 is a view schematically showing an etching gas supply unit for vapor phase decomposition of a substrate according to another embodiment of the present invention. Drawing 9 is a cross-sectional view of a recycling unit according to an embodiment of the present invention; FIG. 10 is a cross-sectional view of a recycling unit according to another embodiment of the present invention; and FIG. 11 is a wafer clamping member using a recycling unit; FIG. 12 is a diagram illustrating a wafer holder element having an improved structure in a gas phase decomposition unit according to an embodiment of the present invention; FIG. 13 is a view showing the present invention; BRIEF DESCRIPTION OF THE DRAWINGS FIG. 14 is a cross-sectional view showing an upper portion of a chamber in a gas phase decomposition unit for a substrate according to another embodiment of the present invention.

Claims (16)

A substrate contaminant analyzing device is used as a substrate contaminant analyzing device for analyzing pollutants on a substrate of an analytical object by using a nozzle, wherein the nozzle comprises a nozzle tip at a tip of the nozzle The inner side is formed with an exhaust passage along the longitudinal direction, and the exhaust passage serves as a passage for discharging a gas which occurs during etching of the analyte substrate. The substrate contaminant analysis device according to claim 1, wherein at least one etching solution for the etching is provided to the analyte substrate side through a flow path formed inside the nozzle tip portion A dilution solution for diluting the etching solution, and the same solution for trapping contaminants is sucked from the analyte substrate. The substrate contaminant analysis device according to claim 2, wherein a front end of the pipe for sucking the sample solution is located downward from the front end of the pipe for supplying the etching solution or the diluting solution to the analysis The surface side of the object substrate. A substrate contaminant analyzing device is used as a substrate contaminant analyzing device for analyzing an object substrate after collecting a contaminant by using a nozzle, wherein a nozzle tip of the nozzle includes a first nozzle tip and a second nozzle tip enclosing the outer peripheral surface of the first nozzle tip, and the purge gas is discharged through the interval between the first nozzle tip and the second nozzle tip, along the longitudinal direction of the first nozzle tip An exhaust passage is formed which serves as a passage for exhausting gas which occurs during etching of the analyte substrate. The substrate contaminant analysis device according to claim 1 or 4, wherein, for the exhaust of the exhaust passage, at least one exhaust duct is coupled to the nozzle, and one end of the exhaust duct and the exhaust passage Connected and connected to the exhaust at the other end. The substrate contaminant analysis device according to claim 1 or 4, wherein the exhaust passage communicates with the outside of the nozzle through the communication port. The substrate contaminant analysis device according to claim 1 or 4, further comprising a nozzle holder for supporting the nozzle, the nozzle tip is not fixed to the nozzle holder, but is disposed in the same on. The substrate contaminant analysis device according to claim 7, wherein the nozzle further includes a nozzle head coupled to the nozzle holder from above the nozzle tip, and the nozzle head is coupled to the nozzle head for The nozzle supplies a solution and a conduit for discharging the solution from the nozzle. A substrate contaminant analyzing device, which is used for introducing and receiving a wafer in a semiconductor manufacturing process for gas phase decomposition, transporting a solution for trapping a pollutant to an analyzer, and analyzing the substrate contaminant by the analyzer An analysis device, comprising: a recycling unit for recycling the wafer that completes the trapping of the contaminant, in a state of being clamped by a wafer holder, comprising at least an acid series or a salt base series a solution of a chemical substance; the wafer holder includes a wafer holder rotatably fixed to the carrier, having a contact portion in contact with a side of the wafer and a first magnet, the wafer The holder rotates in a direction of pressurizing the side of the wafer as the wafer holder rotates. The substrate contaminant analysis device according to claim 9, wherein an external magnet is formed which is fixed to a chamber, whereby when the wafer is sandwiched at a reaction position at which the process is performed, The first magnet receives a force in a direction in which the contact portion presses a side surface of the wafer. The substrate contaminant analysis device according to claim 10, wherein the external magnet comprises: a second magnet that is pressed against the contact portion when the reaction position of the process is performed a direction of a side of the wafer, applying a force to the first magnet; a third magnet, the wafer being clamped to a loading/unloading position of the wafer, to gradually move the contact away from the wafer The direction of the side applies force to the first magnet. The substrate contaminant analysis device according to claim 11, wherein the second magnet is fixedly mounted on a lower portion of the chamber, and the third magnet is fixedly mounted on a side of the chamber. The substrate contaminant analysis device according to claim 11, wherein the loading/unloading position is between a position at which the wafer is introduced into the chamber and the reaction position. A substrate contaminant analyzing device is configured to perform gas phase decomposition in a state in which the analyte wafer is placed in a wafer clip element before the capturing, as a contaminant for analyzing and analyzing an object wafer. a substrate contaminant analysis device of a gas phase decomposition unit, the wafer holder assembly comprising: a bracket extending radially from a center of rotation of the wafer holder member; a carrier pin mounted to the bracket, disposed in the bracket The analyte wafer is placed in a state where the lower portion of the analyte wafer is in point contact; a wafer guide is mounted on the carrier, and the side of the analyte wafer is guided during the positioning. The substrate contaminant analysis device according to claim 14, wherein the carrier pin and the wafer guide are mounted at an end of the carrier, and the wafer guide is mounted on an outer side of the carrier pin . A substrate contaminant analysis device as a substrate contaminant of a gas phase decomposition unit for gas phase decomposition of a substrate of an analyte wafer before the capturing, in order to capture and analyze a contaminant of the object wafer The analysis device is characterized in that: the gas phase decomposition unit comprises: a chamber formed with an etching gas introduction portion for introducing an etching gas and an etching gas reaction space for etching the gas for reaction; The chamber performs a function of raising at least the analyte wafer; the 嘎etching gas introduction portion is formed in the form of a pipe or a pipe in the etching gas reaction space, and an etching gas is formed in a side direction of the pipe or the pipe. Spray holes.