KR101653987B1 - Apparatus For Analyzing Substrate Contamination And Method Thereof - Google Patents
Apparatus For Analyzing Substrate Contamination And Method Thereof Download PDFInfo
- Publication number
- KR101653987B1 KR101653987B1 KR1020150050587A KR20150050587A KR101653987B1 KR 101653987 B1 KR101653987 B1 KR 101653987B1 KR 1020150050587 A KR1020150050587 A KR 1020150050587A KR 20150050587 A KR20150050587 A KR 20150050587A KR 101653987 B1 KR101653987 B1 KR 101653987B1
- Authority
- KR
- South Korea
- Prior art keywords
- wafer
- gas
- solution
- etching
- substrate
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Abstract
The substrate contaminant analyzing apparatus according to the present invention includes a gas phase decomposition unit for gas phase decomposition of a bulk of a wafer to be analyzed prior to entrapment of contaminants, wherein the gas phase decomposition unit includes an etching gas A chamber having an inlet; And a wafer chuck for performing at least a function of raising and lowering the wafer to be analyzed in the chamber, wherein when the wafer to be analyzed is raised by the wafer chuck, etching gas is introduced between the wafer to be analyzed and the inner surface of the chamber, And the etching gas reaction space has a shape in which the central portion is high and the etching gas is lowered toward the peripheral portion.
According to the present invention, by forming the etching gas reaction space between the wafer and the inner surface of the upper side of the chamber, it is possible to improve the reaction efficiency and adjust the reaction rate in the gas phase decomposition of the bulk, The etch uniformity is improved by constructing the reaction space which becomes lower as the temperature increases.
Description
The present invention relates to a substrate contamination analyzing apparatus and a substrate contamination analyzing method capable of analyzing contaminants such as metal atoms in an in-line.
Korean Patent Registration No. 383264 (published on Apr. 9, 2003) discloses an apparatus for analyzing contaminants on a semiconductor wafer. In the apparatus for analyzing contaminants, the surface of a wafer is automatically analyzed to analyze metallic contaminants adsorbed on the wafer surface. And a device structure for collecting contaminants.
One of the main causes of defects or defects that occur during the semiconductor manufacturing process and a decrease in lifetime in long term use is metal impurities. However, metal impurities exist not only on the surface of the wafer but also inside wafers (bulk), and these metal impurities can be placed directly in the bulk of the wafer manufacturing process, but they may penetrate into the bulk from the outside due to the nature of metal impurities, Such metal impurities present in the device may cause defects such as electrical anomalies in the device.
However, the above-described substrate contamination analyzing apparatus can perform only the contamination analysis of the wafer surface by allowing only the scanning on the wafer surface, and the analysis of the contaminants existing in the bulk of the wafer, the profile in the depth direction There is a problem that it can not be obtained.
On the other hand, the substrate contaminant analyzing apparatus adopts a monitor wafer in a semiconductor manufacturing process, performs gas phase decomposition, scans using nozzles, and analyzes the resultant using an analyzer. The substrate contaminant analysis involves the treatment by etching chemical in the gas phase decomposition and scanning process, and there is a problem that the cost of consuming the monitor wafer is inconvenient because the analyzed monitor wafer is discarded.
The recognition of the problems and problems of the prior art is not obvious to a person having ordinary skill in the art, so that the inventive step of the present invention should not be judged based on the recognition based on such recognition I will reveal.
It is an object of the present invention to provide an apparatus and method for analyzing a substrate contaminant that overcomes at least one of the problems of the prior art described above,
It is an object of the present invention to provide an apparatus and method for analyzing a substrate contaminant capable of analyzing contaminants present in a bulk of a wafer.
Another object of the present invention is to provide a substrate contamination analyzing apparatus and method capable of obtaining a depth direction profile at a specific point of a wafer.
Another object of the present invention is to provide an apparatus and method for analyzing a substrate contaminant capable of recycling a monitor wafer used for analysis.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are not restrictive of the invention, unless further departing from the spirit and scope of the invention as defined by the appended claims. It will be possible.
An apparatus for analyzing substrate contamination according to an aspect of the present invention is an apparatus for analyzing substrate contamination after capturing contaminants by using nozzles in a substrate to be analyzed,
The nozzle includes a nozzle tip, and an exhaust passage, which is a passage for discharging gas generated in the course of etching the substrate to be analyzed, is formed in the nozzle tip along the longitudinal direction.
In the substrate contamination analyzer described above, a diluting solution for diluting at least the etching solution for etching and the etching solution is provided toward the substrate to be analyzed through a flow path formed inside the nozzle tip, and the contaminants are collected And the sample solution is sucked from the substrate to be analyzed.
The tip of the tube for sucking the sample solution may be positioned lower than the tip of the tube for providing the etching solution or the diluting solution toward the surface of the substrate to be analyzed, do.
An apparatus for analyzing substrate contaminants according to an aspect of the present invention is an apparatus for analyzing substrate contaminants after collecting contaminants using a nozzle in a substrate to be analyzed,
Wherein the nozzle tip portion of the nozzle includes a first nozzle tip and a second nozzle tip surrounding the outer circumferential surface of the first nozzle tip and the purge gas is discharged through a gap between the first nozzle tip and the second nozzle tip, And an exhaust passage is formed along the longitudinal direction inside the first nozzle tip.
In the above substrate contamination analyzer, an exhaust tube is connected to the nozzle, at least one end of which communicates with the exhaust passage and the other end of which is connected to the exhaust device, for exhausting the exhaust passage.
In the substrate contamination analyzer described above, the exhaust passage communicates with the outside of the nozzle through a communication hole.
The apparatus for analyzing substrate contaminants may further include a nozzle bracket for supporting the nozzle, wherein the nozzle tip is not fixed to the nozzle bracket.
The apparatus for analyzing a substrate contaminant may further include a nozzle head coupled to the nozzle bracket at a position above the nozzle tip, wherein the nozzle includes a nozzle for supplying a solution to the nozzle, And a tube for discharging the solution is coupled to the nozzle head.
A substrate contamination analyzing method according to an aspect of the present invention is a substrate contamination analyzing method using a substrate contamination analyzing apparatus for collecting and analyzing contaminants by using nozzles in a substrate to be analyzed,
A first step of sequentially supplying droplets of an etching solution for etching the substrate to be analyzed and a droplet of a diluting solution for diluting the etching solution onto the substrate to be analyzed at a time interval, And the diluted solution is transferred to the nozzle through a flow path.
In the method of analyzing a substrate contaminant, the time interval is adjusted to control the depth of the etching.
In the above-described substrate contamination analyzing method, the diluting solution may be ultra-pure water.
In the above-described substrate contamination analyzing method, the diluting solution may be a scan solution containing hydrofluoric acid and ultrapure water.
A substrate contamination analyzing method according to an aspect of the present invention is a substrate contamination analyzing method using a substrate contamination analyzing apparatus for collecting and analyzing contaminants by using nozzles in a substrate to be analyzed,
And a first step of supplying a droplet of the etching solution for etching the substrate to be analyzed onto the substrate to be analyzed, wherein the etching solution is transferred to the nozzle through a flow path.
In the method of analyzing a substrate contaminant, the concentration or the volume of the etching solution is controlled in order to control the depth of the etching.
The substrate contamination analyzing method may further include a second step of transferring the droplet after performing the first step to the analyzer through a flow path and analyzing the droplet by the analyzer.
In order to obtain a profile in a depth direction at a point on the substrate to be analyzed, the first step and the second step are performed a plurality of times while fixing a position on a plane of at least the nozzle .
In the above-described substrate contamination analyzing method, the etching solution includes hydrofluoric acid and nitric acid.
In the above-described substrate contamination analyzing method, in performing all or a part of the first step, the substrate is moved while the position of the nozzle is shifted.
And the volume of the droplet is reduced or dried using a lamp after the first step is performed.
An apparatus for analyzing a substrate contaminant according to an aspect of the present invention includes a gas phase decomposition unit for gas phase decomposition of a bulk of the wafer to be analyzed prior to the trapping for trapping and analyzing contaminants present in a bulk of a wafer to be analyzed The substrate contamination analyzing apparatus comprising:
Wherein the gas phase decomposition unit comprises: a chamber having an etching gas introduction portion for introducing an etching gas into a central upper portion thereof; And a wafer chuck for performing at least a function of raising and lowering the wafer to be analyzed in the chamber, wherein when the wafer to be analyzed is raised by the wafer chuck, an etching gas And the etching gas reaction space has a shape in which the central portion is high and the etching gas is lowered toward the peripheral portion.
In the substrate contamination analyzer described above, a gap is formed between the upper surface of the wafer chuck or the upper surface of the wafer to be analyzed and the inner surface of the upper side of the chamber in the etching gas reaction space, through which the etching gas can escape .
In the above substrate contamination analyzer, the wafer chuck may include a heater for heating the wafer to be analyzed.
An apparatus for analyzing a substrate contaminant according to an aspect of the present invention is a device for trapping and analyzing contaminants existing in a bulk of a wafer to be analyzed, 1. An apparatus for analyzing a substrate contaminant comprising an etch gas supply for supplying a gas,
Wherein the etching gas supply unit comprises: an etching liquid bath for containing an etching liquid; A carrier gas supply line which once supplies the carrier gas in a state of being impregnated in the etchant of the etchant bath to generate bubbles; And an etch gas delivery line for supplying an etch gas vaporized in the etchant bath to the gas phase decomposition unit, wherein the etchant vessel is heated by a heater.
In the above substrate contamination analyzer, a porous cap is coupled to the end of the carrier gas supply line.
An apparatus for analyzing a substrate contaminant according to an aspect of the present invention is a device for trapping and analyzing contaminants existing in a bulk of a wafer to be analyzed, 1. An apparatus for analyzing a substrate contaminant comprising an etch gas supply for supplying a gas,
Wherein the etching gas supply unit comprises: an etching liquid bath for containing an etching liquid; A spray device for generating an aerosol from the etchant of the etchant vessel in the flow of carrier gas; A spray chamber providing a space for the generated aerosol; And an etching gas delivery line for supplying a vaporized etching gas in the spray chamber to the gas phase decomposition unit, wherein the spray chamber is heated by a heater.
In the substrate contamination analyzer described above, the etchant of the etching extractor is supplied to the atomizing device by a pump.
In the above-described substrate contamination analyzer, the etch gas transmission line may be heated by a heater or a cross-sectional area of the flow path may be 0.1 cm 2 or more.
In the substrate contamination analyzer described above, the etching liquid may include nitric acid and hydrofluoric acid.
An apparatus for analyzing a substrate contaminant according to an aspect of the present invention is a substrate contamination analyzer for analyzing a wafer contaminated with a wafer by introducing a wafer in a semiconductor manufacturing process and transferring the collected solution to an analyzer,
And a recycling unit for treating the wafer with the wafer chuck gripped with the solution containing at least acid series or base series chemical in a state of being gripped by the wafer chuck in order to recycle the wafer with the contaminated particles collected thereon, And a wafer gripper fixed to the wafer and having a first magnet and a contact portion in contact with the side of the wafer, wherein the wafer gripper rotates in a direction in which the contact portion presses the side surface of the wafer when the wafer chuck rotates .
In the substrate contamination analyzer described above, an outer magnet fixed to the chamber such that the first magnet is urged in a direction in which the contact portion presses the side surface of the wafer when the wafer chuck is at a reaction position for performing the processing .
In the above-described substrate contamination analyzer, the external magnet may be arranged in a second position where the contact portion presses the side face of the wafer when the wafer chuck is in the reaction position for performing the process, magnet; And a third magnet that applies a force to the first magnet in a direction in which the contact portion is away from a side surface of the wafer when the wafer chuck is in a load / unload position for loading or unloading the wafer.
In the above-described substrate contamination analyzer, the second magnet is fixed to the lower portion of the chamber, and the third magnet is fixed to the side surface of the chamber.
In the substrate contamination analyzer described above, the load / unload position is located between a position where the wafer is introduced into the chamber and the reaction position.
An apparatus for analyzing a substrate contaminant according to an aspect of the present invention includes a gas phase decomposition unit for gas phase decomposition in a state where the wafer is placed on a wafer chuck assembly prior to the collection, The substrate contamination analyzing apparatus comprising:
The wafer chuck assembly includes: a bracket extending radially from a center of rotation of the wafer chuck assembly; And a plurality of vacuum chuck nozzles provided in the bracket and vacuum-sucked and held in a state in which the lower portion of the wafer is in point contact at the time of mounting.
In the substrate contamination analyzer described above, the vacuum chuck nozzle is installed at the end of the bracket, and the flow path for vacuum suction is installed in the bracket.
An apparatus for analyzing a substrate contaminant according to an aspect of the present invention includes a gas phase decomposition unit for gas phase decomposition in a state where the wafer is placed on a wafer chuck assembly prior to the collection, The substrate contamination analyzing apparatus comprising:
The wafer chuck assembly includes: a bracket extending radially from a center of rotation of the wafer chuck assembly; A load pin installed on the bracket and for holding the wafer in a state in which the lower portion of the wafer is in point contact when the wafer is mounted; And a wafer guide installed on the bracket and guiding a side surface of the wafer when the wafer is mounted.
In the above substrate contamination analyzer, the rod pin and the wafer guide are installed at the ends of the bracket, and the wafer guide is installed outside the load pin.
According to an aspect of the present invention, since the nozzle tip portion of the nozzle is seated by its own weight, the nozzle tip portion can be lifted up even when the surface of the wafer is not uniform during the scan, so that the damage to the nozzle tip portion or the substrate is reduced .
According to one aspect of the present invention, there is provided an effect of reducing the spread of gas to the periphery of the scan module and improving the efficiency of gas discharge by discharging the gas generated at the tip portion of the nozzle directly from the upper chamber using the exhaust passage have.
According to one aspect of the present invention, there is an effect of analyzing contaminants present in the bulk of the wafer, and a profile in the depth direction at a specific point of the wafer can be obtained.
According to one aspect of the present invention, dilution of the etching solution with the scan solution increases the amount of the sample compared to the case where only the etching solution is used, thereby facilitating the analysis in the analyzer. In addition, in the case of using only the etching solution of the related art, there is a phenomenon that the contaminants are not sucked together with the solution and remain on the substrate, but this residual effect can be reduced.
According to one aspect of the present invention, there is an effect that a matrix characteristic similar to that of a scan solution is obtained by diluting with a scan solution to obtain analysis conditions similar to the calibration conditions.
According to one aspect of the present invention, by forming the etching gas injection hole on the side of the etching gas introducing path, it is possible to reduce the direct molecular sieve reaction of the etching gas and the wafer and increase the uniformity of the etching gas in the etching gas reaction space It is possible to reduce the phenomenon that the fine condensate, which may be present inside the tube or pipe, exists at a position lower than the etching gas injection hole and falls to the wafer.
According to one aspect of the present invention, by forming an etching gas reaction space between the wafer and the inner surface of the upper side of the chamber, it is possible to improve the reaction efficiency and adjust the reaction rate in the gas phase decomposition of the bulk. In addition, according to one aspect of the present invention, etch uniformity is improved by constructing a reaction space in which a central portion of the etching gas reaction space is high and the reaction space is reduced toward the peripheral portion.
According to an aspect of the present invention, there is provided a method of manufacturing a semiconductor device, including a heater for heating a wafer to be analyzed in a wafer chuck or on an upper cover of a chamber, thereby improving reaction efficiency of the etching gas, .
According to an aspect of the present invention, an etching gas supply part for gas phase decomposition can generate an etching gas sufficient to perform gas phase decomposition on a bulk, and can improve transfer efficiency and reduce problems such as condensation .
According to an aspect of the present invention, since the monitor wafer that has been discarded in the past can be reused, the cost of the monitor wafer can be greatly reduced.
According to one aspect of the present invention, there is an effect that the wafer can be stably fixed even at high-speed rotation while reducing complexity of the structure and troubles such as inconvenience of maintenance, corrosion and contamination.
According to the wafer chuck assembly and the vapor phase decomposition unit having the wafer chuck assembly according to an aspect of the present invention, the entire lower portion of the wafer is uniformly etched except the portion where the vacuum chuck nozzle or the rod pin contacts, It is effective.
FIG. 1 is an explanatory view showing an overall configuration of a substrate contaminant analyzing apparatus according to an embodiment of the present invention.
FIG. 2 is a diagram schematically illustrating a flow path and a valve for supplying and transferring a scan solution / etching solution, a sample solution, a standard solution, and the like in the substrate contaminant analyzing apparatus according to an embodiment of the present invention.
Fig. 3 is a view showing the structure of a nozzle for point bulk etching and sample acquisition according to an embodiment of the present invention. Fig. 3 (A) is a front view and Fig. 3 (B) is a sectional view.
4 is a view showing a point bulk etching and sample generation process according to an embodiment of the present invention.
5 is a cross-sectional view illustrating a bulk gaseous decomposition unit according to an embodiment of the present invention.
6 is a cross-sectional view showing the upper part of the chamber in the bulk gaseous decomposition unit according to one embodiment of the present invention.
7 is a diagram schematically showing an etching gas supply part for gas phase separation according to an embodiment of the present invention.
FIG. 8 is a view schematically showing an etching gas supply unit for bulk gas-phase decomposition according to another embodiment of the present invention.
9 is a cross-sectional view of a recycling unit according to an embodiment of the present invention.
10 is a cross-sectional view of a recycling unit according to another embodiment of the present invention.
11 is a view showing the wafer chuck assemblies of the recycling unit by the respective operation positions.
12 is a view showing a wafer chuck assembly of an improved structure in a gas phase decomposition unit according to an embodiment of the present invention.
13 is a view showing a wafer chuck assembly of an improved structure in a gas phase decomposition unit according to another embodiment of the present invention.
14 is a cross-sectional view showing an upper part of a chamber in a bulk gas-phase decomposition unit according to another embodiment of the present invention.
BRIEF DESCRIPTION OF THE DRAWINGS The above and other features and advantages of the present invention will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings in which: FIG. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In order to clearly illustrate the present invention in the drawings, parts not related to the description are omitted, and similar names and reference numerals are used for similar parts throughout the specification.
Meaning of Terms
In this specification, the term "substrate" refers to a semiconductor wafer, an LCD substrate, an OLED substrate, and the like. The term "substrate" refers not only to a start state during the manufacturing process, but also includes an oxide film, Or an element or the like may be formed.
As used herein, a "scan" involves scanning in depth direction to obtain a point depth profile at a particular point on the substrate, optionally with a scan for all or a portion of the substrate.
As used herein, a "scan solution" is a solution to be fed or supplied to a nozzle to scan a substrate or to collect contaminants on a substrate, and may be a solution that is tolerated in normal scans Quot; sample solution " refers to a solution containing contaminants and the like on the substrate.
Overall Configuration and Operation of Substrate Contaminant Analysis Apparatus
FIG. 1 is an explanatory view showing an overall configuration of a substrate contaminant analyzing apparatus according to an embodiment of the present invention.
The substrate contaminant analyzing apparatus of the present invention includes a
The
The
The
The
The
The substrate contaminant analyzing apparatus may further include a separate gas-phase decomposition unit (not shown) in place of gas-phase decomposition of the bulk of the substrate in the
In addition, the apparatus for analyzing substrate contaminants according to an embodiment of the present invention includes a portion for automatic manufacture and transfer of a scan solution and an etching solution, generation and supply of an etching gas, transfer of a sample solution, It can be configured on the side or inside of the contaminant analyzing apparatus, which will be described later.
In the following, a description will be made on the basis of a case where the contaminants on the surface of the substrate are scanned and analyzed in relation to a method of operating the entire configuration of the substrate contaminant analyzing apparatus.
The
Subsequently, the substrate is taken out of the
In this state, the substrate is scanned in parallel with the rotation of the
The scan largely includes a planar scan performed while a nozzle relatively moves on a plane of the substrate, a depth direction scan performed while repeating etching in a depth direction of the substrate, and a scan in which both are mixed.
In planar scanning, the nozzle may be moved to a spiral trajectory on the substrate, or the nozzle may be moved each time one rotation of the substrate is completed to move the nozzle to a plurality of concentric circles to scan the substrate.
When the surface of the substrate is scanned using the nozzle, the scan solution becomes a sample solution that absorbs contaminants such as metal atoms. After the scan, the nozzle sucks the sample solution and the sample solution flows from the nozzle to the
In the depth direction scanning, the etching solution and the scan solution are supplied sequentially or the etching solution is supplied onto the substrate while the position of the nozzle on the plane is fixed.
The supplied solution is a sample solution which absorbs contaminants such as metal atoms, the nozzle sucks the sample solution, the sample solution is transferred from the nozzle to the
The scan solution is a solution containing, for example, hydrofluoric acid (HF), hydrogen peroxide (H 2 O 2 ) and ultrapure water, and the etching solution is a solution containing, for example, hydrofluoric acid (HF), nitric acid (HNO 3 ) and ultra pure water.
The scanned substrate is transferred from the
On the other hand, before being transferred to the
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a substrate contamination analyzing apparatus and a substrate contamination analyzing method according to an embodiment of the present invention will be described in detail with reference to the detailed features.
Transfer of scan solution / etching solution and sample solution through the flow path
FIG. 2 is a diagram schematically illustrating a flow path and a valve for supplying and transferring a scan solution / etching solution, a sample solution, a standard solution, and the like in the substrate contaminant analyzing apparatus according to an embodiment of the present invention.
The
The
The scan solution of the
The
Then, the
Although a
The
The switching
The
The
The sample
The
The
The sample liquid may be air or an inert gas such that the sample solution is loaded into the
The sample
It is determined that the sample solution arrives at the
The
Additional pressure can be applied during or after discharge of the pump using air or gas to complete the quantitative solution transfer. The sample travel distance is usually in the range of 2 to 4 m, but other than that, it is possible.
Hereinafter, the operation of the sample
In the basic state, the
After the
When the sample solution reaches the sample tube, it senses the first
The flow path between the
If the first
The
When the first
When the sample solution is introduced, both ends of the sample solution are gaseous, and when the sample solution moves, it can detect that the first
A substrate contaminant analyzing apparatus for transferring a sample solution sucked by using a
The
The standard
The
Calibration can be automatically performed by introducing the dilution ratio of the sample solution and the standard solution into the
Normally, the
In the load position of the
The sample
Point bulk etching and nozzles
Fig. 3 is a view showing the structure of a nozzle for point bulk etching and sample acquisition according to an embodiment of the present invention. Fig. 3 (A) is a front view and Fig. 3 (B) is a sectional view.
The
The
The
The purge gas serves to prevent the droplet of the solution discharged from the
The
According to one aspect of the present invention, since the
The
The
3, the
The
The tip of the
The
The
The
When performing point bulk etching or the like for depth direction scanning, the substrate is etched using an etching solution, and a considerable amount of gas is generated at the droplet between the tip of the nozzle and the substrate.
According to one aspect of the present invention, the gas generated at the tip of the nozzle is directly discharged from the upper chamber using the
Hereinafter, a point bulk etching process and a sample creating process using a nozzle according to an embodiment of the present invention will be described.
4 is a view showing a point bulk etching and sample generation process according to an embodiment of the present invention.
First, with the wafer loaded in the scan stage 51 (see FIG. 1), the nozzle is moved to the position where the scan including the point bulk etching is performed and purged with nitrogen (N 2 ) or the like. A silicon oxide film or another film may be formed on the surface of the wafer (see Fig. 4 (A)). Further, the wafer may be completely or partially removed in advance by the
Then, the droplet of the scan solution is supplied onto the wafer between the nozzle and the wafer for collecting contaminants on the surface, and the sample solution in which the contaminants are collected by the supplied scan solution (see FIG. 4 (B) To the
In order to analyze the bulk of the substrate, a droplet of the etching solution and a droplet of the diluting solution are sequentially supplied to the wafer between the nozzle and the wafer through the
When the etching solution is supplied to the tip of the nozzle, the bulk of the substrate is etched (see Fig. 4 (C)). Then, when the scan solution or the like is supplied, the etching is stopped while diluting the etching solution (Fig. Reference). In order to control the etching depth, the time interval between supplying the droplet of the etching solution and the droplet of the scanning solution can be adjusted. The etching solution and the scanning solution are mixed and the sample solution containing the contaminant is transferred to the
The scan solution used to measure surface contamination is used to precisely terminate the etching reaction of the etching solution by diluting the etching solution to suppress further reaction. When only the etching solution is used, the amount of the sample (sample solution) However, it is possible to increase the amount of the sample by diluting the solution with the scan solution, thereby making it easier to perform analysis in the analyzer.
In addition, dilution with a scan solution has the effect of obtaining a matrix characteristic similar to that of a scan solution and obtaining analysis conditions similar to the calibration conditions. In analyzing the analyzer using the scan solution as a base, analyzing the sample solution containing the contaminants based on the etching solution alone may cause an error in the analysis result due to the difference from the calibration conditions.
In addition, when only the etching solution is used, there is a phenomenon that the contaminants are not sucked together with the solution and remain on the substrate. However, such a residual phenomenon can be reduced by diluting the solution with the scan solution.
Then, in order to obtain the profile in the depth direction at one point of the wafer, the supply of the etching solution and the scan solution and the transfer and analysis of the sample solution are repeated a plurality of times while the position of the nozzle on the plane is fixed. The processes shown in Figs. 4 (C) and 4 (D) are repeatedly performed. Accordingly, the depth of the wafer is increased along with the depth of the wafer to obtain the sample solution, and the depth profile of the contaminant can be obtained at a specific point of the wafer. At this time, the plane position of the nozzle is fixed, but the vertical position can be gradually lowered or fixed to approach the wafer. After the sample solution is transferred, a nozzle cleaning process may be added to clean the nozzle before the next etching.
The surface analysis may be omitted, and the etching solution used for point bulk etching may be, for example, a mixed solution of hydrofluoric acid, nitric acid, and ultrapure water, and the etch rate may be limited by controlling the concentration of the etching solution. , Acetic acid, etc. can be added.
As a method of automatically limiting the etching depth, a method of controlling the concentration or the volume of the etching solution may be used. When the concentration and volume of the etching solution are adjusted, the consumption of the reactants in the chemical liquid is completed, so that the additional reaction does not occur, so that the etching reaction can be naturally terminated.
The etch solution and the scan solution are contained in the point
On the other hand, it is also possible to analyze bulk contaminants only with the etching solution without using the scan solution, supplying the droplets of the etching solution for etching the wafer onto the wafer, etching the bulk of the wafer, 211 and the
In addition, in performing the etching solution and a part or all of the supply of the scan solution and the transfer and analysis of the sample solution, it is possible to perform while moving the position of the plane of the nozzle. As described above, the point depth profile can be obtained by performing point bulk etching or the like while fixing the position of the nozzle on the plane, but bulk etching and scanning can be performed on the whole or part of the wafer using the same nozzle. In order to do this, it is possible to scan the bulk of the wafer with the front surface, the circular shape, the limited shape, etc. of the wafer by combining the rotation of the wafer and the movement of the nozzle.
In addition, a process of reducing the volume of the droplet or drying the droplet using a lamp after supplying the etching solution and / or the scan solution may be added. For example, when the volume of the etching solution is large, a halogen (halogen) lamp or an infrared (IR) lamp may be used for drying, and then a scan solution or the like may be supplied for recovery analysis.
Gas phase decomposition on bulk of wafers
The conventional VPD method is capable of analyzing contamination on the surface of the wafer only, but the metal in the bulk region is a cause of defects such as electrical abnormality of the device. Therefore, measurements inside the bulk area are required, and the wafer itself must be etched.
As described above, the etching method includes a method of performing only a specific region (Point) and a method of etching a front surface (global or full) of the wafer. In the case of front etching for a wafer, an etching method using a chemical solution is widely used. However, the apparatus for analyzing contamination as in the apparatus of the present invention is not applicable because there is a problem that contaminants are lost in a liquid processing process. Further, in order to etch the wafer up to the bulk of the wafer by the gas phase decomposition method, the etching speed and efficiency must be high, and there should be no problem caused by the etching gas being condensed and falling onto the wafer.
FIG. 5 is a cross-sectional view showing a bulk gaseous decomposition unit according to an embodiment of the present invention, and FIG. 6 is a sectional view showing an upper part of a chamber in a bulk gaseous decomposition unit according to an embodiment of the present invention.
The gas phase decomposition unit according to an embodiment of the present invention is comprised of a substrate contamination analyzing apparatus for collecting and analyzing contaminants present in a bulk of a wafer to be analyzed, .
The bulk gas
The
The
The
The etching reaction improves the etching reaction efficiency in a limited space by providing a reaction space smaller than the chamber because the reaction is not smooth due to the dilution problem if the reaction space is large. Etchant vapor is supplied from the upper part of the wafer, moves to the side, and reacts. In order to improve etch uniformity, a reaction space in which the central part is higher and which is lowered toward the side is formed and the wafer is rotated during etching.
In order to improve the uniformity, the shower head can be disposed above the reaction space, and the
According to one aspect of the present invention, by forming the etching
The
14 is a cross-sectional view showing an upper part of a chamber in a bulk gas-phase decomposition unit according to another embodiment of the present invention.
The gas phase decomposition unit includes a
The etching gas is supplied through the etching gas injection holes in the etching
One or more pores on the path may be formed and the number of pores may be appropriately adjusted to improve the uniformity of the etching and the pores may be formed on the bottom of the path (i.e., on the side perpendicular to the wafer surface) There is a problem that the result of the development can affect the
In one embodiment of the present invention, the etching gas injection holes are formed on the sides of the path, and the side punch is performed to reduce the direct molecular sieve reaction of the etching gas and the wafer, and uniformity when the etching gas spreads in the etching
Hereinafter, a process of performing vapor phase decomposition on a bulk using a bulk gaseous decomposition unit according to an embodiment of the present invention will be briefly described.
The
Subsequently, the
7 is a diagram schematically showing an etching gas supply part for gas phase separation according to an embodiment of the present invention.
The etching
The etch gas supply section includes an
The carrier
The etching solution is a solution containing hydrofluoric acid and nitric acid. Since hydrofluoric acid and nitric acid are generated with an etchant vapor and simple bubbling does not generate sufficient gas, the following apparatus is added .
The
And the etching gas in the process the bar, the etching
The etchant of the
FIG. 8 is a view schematically showing an etching gas supply unit for bulk gas-phase decomposition according to another embodiment of the present invention.
The etching
The etch
The
The
Since simple bubbling does not generate enough gas, it adds the following devices. In the
The
And etching gas can cause problems with the bar, the etching
According to an aspect of the present invention, an etching gas supply part for gas phase decomposition can generate an etching gas sufficient to perform gas phase decomposition on a bulk, and can improve transfer efficiency and reduce problems such as condensation .
Recycling for wafers
The substrate contamination analyzer is mainly composed of a monitor wafer in a semiconductor manufacturing process, gas phase decomposition, and then analyzing the monitor wafer using an analyzer by using a nozzle. Conventionally, contaminant analysis of wafers by ICP-MS and the like is accompanied by vapor phase decomposition, so it is classified into destructive analysis and the analyzed wafers are discarded.
However, according to an embodiment of the present invention, the
9 is a cross-sectional view of a recycling unit according to an embodiment of the present invention.
The
The
And the
According to an embodiment of the present invention, there is provided a method for recycling a monitor wafer that has undergone scanning or the like, comprising a recycling process step of treating the wafer with a solution containing at least acid series or base series chemical in a chamber, And is performed by spraying the solution on both sides of the wafer.
As to the process in the
Then, rinse is performed on the upper and lower wafers using ultrapure water, the wafer is rotated at a high speed, nitrogen gas is sprayed and dried, and after the drying, the wafer load plate is lifted and the door is opened.
According to an aspect of the present invention, since the monitor wafer that has been discarded in the past can be reused, the cost of the monitor wafer can be greatly reduced.
FIG. 10 is a cross-sectional view of a recycling unit according to another embodiment of the present invention, and FIG. 11 is a view showing each operation position with the wafer chuck assembly of the recycling unit as a center.
The recycling unit is comprised of a substrate contaminant analyzing apparatus for analyzing a wafer in which a wafer in a semiconductor manufacturing process is introduced, gas-phase decomposed, and a solution in which contaminants have been captured, to an analyzer and analyzed by an analyzer.
The recycling unit is treated with a solution containing at least acid-based or base-based chemical in the state of being gripped by the wafer chuck in order to recycle the monitor wafer which has collected the contaminants.
The wafer chuck includes a
The
The gripper magnet 634 is installed in the
The outer magnet includes an
The recycling unit shown in Fig. 9 is a structure for fixing the lower portion of the wafer to the vacuum chuck, so that the portion of the lower portion of the wafer that is put on the vacuum chuck can not be processed. In order to process the entire lower portion, a structure for holding the wafer on the side rather than the lower portion of the wafer is adopted. However, the conventional techniques have been problematic in terms of maintenance inconvenience, corrosion and pollution, and structural complexity, .
The
The lower portion of the
When the wafer chuck is in the load / unload position A, a repulsive force acts on the
The lower portion of the
Hereinafter, the operation of the recycling unit according to another embodiment of the present invention will be briefly described.
First, the gate door of the recycling unit is opened, the wafer chuck is raised to the load / unload position A, and the
Then, the
Then, ultra pure water rinses are applied to the upper and lower portions of the wafer, the spin speed of the wafer is increased (spin drying), and a gas such as N 2 is sprayed and dried.
When the process is completed, the wafer chuck is raised to the load / unload position A, the
According to one aspect of the present invention, it is possible to fix only the side surface of the wafer and to treat the chemical liquid on both surfaces while maintaining the wafer stable even when the wafer rotates at high speed while suffering from inconvenience of maintenance, vulnerability to corrosion and contamination, There is an effect that can be fixed.
Improvement of structure of gas phase decomposition unit
12 is a view showing an improved structure of a wafer chuck assembly constructed in a gas phase decomposition unit according to an embodiment of the present invention.
The
A
According to the
13 is a view showing an improved structure of a wafer chuck assembly constructed in a gas phase decomposition unit according to another embodiment of the present invention.
The
The
The lower portion of the
In the conventional vapor phase decomposition unit, the lower part of the wafer is fixed by a vacuum chuck, so that a large part of the lower part of the wafer is covered by the vacuum chuck, and this part can not be vapor-decomposed. As a result, the lower part of the wafer is divided into the gas-phase decomposition part and the gas-phase decomposition part, so that the wafer is subjected to stress by the gas phase decomposition step and is an obstacle to the recycling of the wafer.
According to the wafer chuck assembly and the gas phase decomposition unit having the wafer chuck assembly according to an aspect of the present invention, the entire lower portion of the wafer is uniformly etched except for the portion where the vacuum chuck nozzle or the rod pin comes into contact, Thereby enabling the wafer to be recycled.
10: load port 20: robot
30: aligner unit 40: VPD unit
50: scan unit 51: scan stage
52: scan module 53: nozzle
60: Recycling unit 70: Analyzer
80: sample solution introducing portion 81: first switching valve
82: first sample tube 83: first liquid detection sensor
90: standard solution introduction part 91: second switching valve
92: second sample tube 93: second liquid detection sensor
94: T-tube 100: Sample introduction part
121: Scan solution vessel 131: Point etch solution vessel
201: first nozzle tip 202: second nozzle tip
203: nozzle body 204: bushing
205: first bracket 206: second bracket
207: third bracket 208: nozzle bracket
209: nozzle head 210: nozzle tip
211: solution discharge tube 212: solution supply tube
213: exhaust tube 214: exhaust passage
215: space part 216:
300: Bulk gas phase decomposition unit 310: Chamber
311: etching gas introduction part 330: wafer chuck
340: Wafer load plate 400: Etching gas supply part
410: etchant vessel 421: carrier gas supply line
422: etching gas delivery line 430: heater
500: etching gas supply unit 510: etching liquid vessel
530: Heater 560: Spraying device
570: Spray chamber 700: Wafer chuck assembly
800: wafer chuck assembly
Claims (20)
The gas phase decomposition unit may comprise:
A chamber having an etching gas inlet for introducing an etching gas into a central upper portion thereof; And a wafer chuck performing a function of at least elevating the wafer to be analyzed in the chamber,
When the wafer to be analyzed is raised by the wafer chuck, an etching gas reaction space is formed between the wafer to be analyzed and the inner surface of the upper side of the chamber,
Wherein the etching gas reaction space has a shape in which the central portion is high and the etching gas is lowered toward the peripheral portion,
Wherein the substrate contamination analyzing apparatus comprises:
In the etching gas reaction space,
A wafer chuck having an upper surface and an upper surface of the chamber, the upper surface of the wafer chuck or the upper surface of the wafer to be analyzed and the upper surface of the chamber,
Wherein the substrate contamination analyzing apparatus comprises:
The wafer chuck comprises:
And a heater for heating the wafer to be analyzed.
Wherein the substrate contamination analyzing apparatus comprises:
The etching gas supply unit,
An etchant vessel containing an etchant;
A carrier gas supply line which once supplies the carrier gas in a state of being impregnated in the etchant of the etchant bath to generate bubbles;
And an etch gas delivery line for supplying an etch gas vaporized in the etchant bath to the gas phase decomposition unit,
The etchant bath is heated by a heater,
Wherein the substrate contamination analyzing apparatus comprises:
Wherein a porous cap is coupled to an end of the carrier gas supply line,
Wherein the substrate contamination analyzing apparatus comprises:
The etching gas supply unit,
An etchant vessel containing an etchant;
A spray device for generating an aerosol from the etchant of the etchant vessel in the flow of carrier gas;
A spray chamber providing a space for the generated aerosol;
And an etch gas delivery line for supplying the etch gas vaporized in the spray chamber to the gas phase decomposition unit,
Wherein the spray chamber is heated by a heater,
Wherein the substrate contamination analyzing apparatus comprises:
Wherein the etchant of the etchant vessel is supplied to the atomizing device by a pump,
Wherein the substrate contamination analyzing apparatus comprises:
The etch gas delivery line is heated by a heater or the cross sectional area of the path at least 0.1cm 2,
Wherein the substrate contamination analyzing apparatus comprises:
Wherein the etchant comprises nitric acid and hydrofluoric acid.
Wherein the substrate contamination analyzing apparatus comprises:
And a recycling unit for treating the wastes collected with the contamination to treat them with a solution containing at least acid series or base series chemicals while being gripped by a wafer chuck,
The wafer chuck comprises:
And a wafer gripper fixed to the bracket so as to be rotatable and having a contact portion for contacting the side surface of the wafer and a first magnet,
Wherein the wafer gripper rotates in a direction in which the contact portion presses the side surface of the wafer when the wafer chuck rotates,
Wherein the substrate contamination analyzing apparatus comprises:
Wherein the outer magnet is fixed to the chamber such that the first magnet is urged in a direction in which the contact portion presses the side surface of the wafer when the wafer chuck is in the reaction position for performing the processing.
Wherein the substrate contamination analyzing apparatus comprises:
The external magnet
A second magnet for applying a force to the first magnet in a direction in which the contact portion presses the side surface of the wafer when the wafer chuck is in a reaction position for performing the process;
And a third magnet for applying a force to the first magnet in a direction away from the side surface of the wafer when the wafer chuck is in a load / unload position for loading or unloading the wafer.
Wherein the substrate contamination analyzing apparatus comprises:
The second magnet is fixed to the lower portion of the chamber,
Wherein the third magnet is fixed to a side surface of the chamber,
Wherein the substrate contamination analyzing apparatus comprises:
Wherein the load / unload position is between a position for introducing the wafer into the chamber and the reaction position,
Wherein the substrate contamination analyzing apparatus comprises:
The wafer chuck assembly includes:
A bracket extending radially from a center of rotation of the wafer chuck assembly;
A load pin installed on the bracket and for holding the wafer in a state in which the lower portion of the wafer is in point contact when the wafer is mounted;
And a wafer guide installed on the bracket and guiding a side surface of the wafer when the wafer is mounted.
Wherein the substrate contamination analyzing apparatus comprises:
Wherein the load pin and the wafer guide are provided at the distal end of the bracket, and the wafer guide is provided outside the load pin,
Wherein the substrate contamination analyzing apparatus comprises:
The gas phase decomposition unit may comprise:
A chamber having an etching gas introducing portion for introducing an etching gas and an etching gas reaction space for reacting the etching gas; And a wafer chuck performing a function of at least elevating the wafer to be analyzed in the chamber,
The etch gas introduction part is formed in the form of a tube or a channel in the etching gas reaction space,
And an etching gas injection hole is formed in a lateral direction of the tube or pipe,
Wherein the substrate contamination analyzing apparatus comprises:
The wafer chuck comprises:
And a heater for heating the wafer to be analyzed.
A substrate contaminant analyzing device
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150050587A KR101653987B1 (en) | 2015-04-10 | 2015-04-10 | Apparatus For Analyzing Substrate Contamination And Method Thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150050587A KR101653987B1 (en) | 2015-04-10 | 2015-04-10 | Apparatus For Analyzing Substrate Contamination And Method Thereof |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020160023232A Division KR102172272B1 (en) | 2016-02-26 | 2016-02-26 | Apparatus For Analyzing Substrate Contamination And Method Thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR101653987B1 true KR101653987B1 (en) | 2016-09-05 |
Family
ID=56939076
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020150050587A KR101653987B1 (en) | 2015-04-10 | 2015-04-10 | Apparatus For Analyzing Substrate Contamination And Method Thereof |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR101653987B1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107881491A (en) * | 2016-09-30 | 2018-04-06 | 非视觉污染分析科学技术有限公司 | Substrate contamination thing analytical equipment and substrate contamination thing analysis method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100383264B1 (en) | 2001-03-21 | 2003-05-09 | 삼성전자주식회사 | Collection apparatus and method of metal impurities on the semiconductor wafer |
| KR20070097820A (en) * | 2006-03-29 | 2007-10-05 | 삼성전자주식회사 | Robot for transferring wafer |
| KR20090105586A (en) * | 2008-04-03 | 2009-10-07 | 코리아테크노(주) | Scanstage of measurement apparatus for metal impurities on the semiconductor wafer |
| KR20100070333A (en) * | 2007-10-11 | 2010-06-25 | 발렌스 프로세스 이큅먼트, 인코포레이티드 | Chemical vapor deposition reactor |
| KR101210295B1 (en) * | 2012-08-31 | 2013-01-14 | 글로벌게이트 주식회사 | Apparatus for analyzing substrate contamination and method for analyzing wafer contamination using the same |
-
2015
- 2015-04-10 KR KR1020150050587A patent/KR101653987B1/en active IP Right Grant
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100383264B1 (en) | 2001-03-21 | 2003-05-09 | 삼성전자주식회사 | Collection apparatus and method of metal impurities on the semiconductor wafer |
| KR20070097820A (en) * | 2006-03-29 | 2007-10-05 | 삼성전자주식회사 | Robot for transferring wafer |
| KR20100070333A (en) * | 2007-10-11 | 2010-06-25 | 발렌스 프로세스 이큅먼트, 인코포레이티드 | Chemical vapor deposition reactor |
| KR20090105586A (en) * | 2008-04-03 | 2009-10-07 | 코리아테크노(주) | Scanstage of measurement apparatus for metal impurities on the semiconductor wafer |
| KR101210295B1 (en) * | 2012-08-31 | 2013-01-14 | 글로벌게이트 주식회사 | Apparatus for analyzing substrate contamination and method for analyzing wafer contamination using the same |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107881491A (en) * | 2016-09-30 | 2018-04-06 | 非视觉污染分析科学技术有限公司 | Substrate contamination thing analytical equipment and substrate contamination thing analysis method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100959388B1 (en) | ??? chamber and door on/off apparatus for auto scanning system | |
| KR101710859B1 (en) | Apparatus and method for measuring the ionic contaminant of the wafer surface | |
| JP7366533B2 (en) | System for integrated disassembly and scanning of semiconductor wafers | |
| KR101581376B1 (en) | Apparatus For Analyzing substrate Contamination And Method For Analyzing Wafer Contamination using the same | |
| KR101210295B1 (en) | Apparatus for analyzing substrate contamination and method for analyzing wafer contamination using the same | |
| TWI623735B (en) | Nozzle for substrate analysis | |
| US11260436B2 (en) | Substrate processing apparatus and substrate processing method | |
| KR102217638B1 (en) | Apparatus and method for scanning the contaminant of the wafer surface | |
| EP3457109B1 (en) | Nozzle for substrate analysis and substrate analysis method | |
| US10717117B2 (en) | Substrate processing apparatus and substrate processing method | |
| KR101653987B1 (en) | Apparatus For Analyzing Substrate Contamination And Method Thereof | |
| KR101756456B1 (en) | Apparatus For Analyzing Substrate Contamination And Method Thereof | |
| KR102357431B1 (en) | Apparatus For Analyzing Substrate Contamination And Method Thereof | |
| KR102172272B1 (en) | Apparatus For Analyzing Substrate Contamination And Method Thereof | |
| KR101970338B1 (en) | Apparatus and method for analyzing surface of wafer using spinning | |
| KR102295704B1 (en) | Apparatus For Analyzing Substrate Contamination And Method Thereof | |
| TWI635550B (en) | Apparatus for analyzing substrate contamination | |
| KR101581303B1 (en) | Apparatus For Analyzing Substrate Contamination And Method Thereof | |
| KR102267278B1 (en) | Internal pollution sampling device for Front Open Unified Pod and wafer and sampling method of the same | |
| CN109155247B (en) | Substrate processing apparatus and substrate processing method | |
| US20230317472A1 (en) | Scanning system | |
| KR101548632B1 (en) | Apparatus For Analyzing Substrate Contamination And Method Thereof | |
| CN107881491A (en) | Substrate contamination thing analytical equipment and substrate contamination thing analysis method | |
| KR102250369B1 (en) | an apparatus for treating a substrate and Method for treating a substrate | |
| KR102309167B1 (en) | Substrate analysis method and substrate analysis device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20190801 Year of fee payment: 4 |