TW201806754A - Conductive substrate and method for producing conductive substrate - Google Patents

Conductive substrate and method for producing conductive substrate Download PDF

Info

Publication number
TW201806754A
TW201806754A TW106112467A TW106112467A TW201806754A TW 201806754 A TW201806754 A TW 201806754A TW 106112467 A TW106112467 A TW 106112467A TW 106112467 A TW106112467 A TW 106112467A TW 201806754 A TW201806754 A TW 201806754A
Authority
TW
Taiwan
Prior art keywords
layer
copper
substrate
wiring
blackened
Prior art date
Application number
TW106112467A
Other languages
Chinese (zh)
Other versions
TWI728095B (en
Inventor
下地匠
Original Assignee
住友金屬礦山股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 住友金屬礦山股份有限公司 filed Critical 住友金屬礦山股份有限公司
Publication of TW201806754A publication Critical patent/TW201806754A/en
Application granted granted Critical
Publication of TWI728095B publication Critical patent/TWI728095B/en

Links

Classifications

    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0446Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/20Layered products comprising a layer of metal comprising aluminium or copper
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0445Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00Apparatus or processes specially adapted for manufacturing conductors or cables
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Laminated Bodies (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Non-Insulated Conductors (AREA)

Abstract

Provided is a conductive substrate which comprises a transparent base and metal wiring lines that are formed on at least one surface of the transparent base, and wherein: each metal wiring line has a structure in which a copper wiring layer and a blackened wiring layer containing nickel and copper are laminated; and the transparent base exposed between the metal wiring lines has a visible light transmittance of 90% or more and a b* value of 1.0 or less.

Description

導電性基板、導電性基板的製造方法 Conductive substrate and method for manufacturing conductive substrate

本發明係關於一種導電性基板、導電性基板的製造方法。 The present invention relates to a conductive substrate and a method for manufacturing a conductive substrate.

靜電容式觸控面板,檢測物體接近面板表面時引起的靜電容量變化,並將面板表面上的該接近的物體的位置資訊變換成電訊號。靜電容式觸控面板中使用的導電性基板被設置在顯示器的表面,因此要求導電性基板的導電層的材料具有低反射率、不易識別。 The electrostatic capacitive touch panel detects a change in electrostatic capacity caused when an object approaches the surface of the panel, and converts position information of the approaching object on the surface of the panel into an electrical signal. The conductive substrate used in the capacitive touch panel is provided on the surface of the display. Therefore, the material of the conductive layer of the conductive substrate is required to have a low reflectance and be difficult to identify.

因此,作為靜電容式觸控面板中使用的導電層的材料,目前採用反射率低、不易識別的材料,在透明基板或透明膜上形成配線。 Therefore, as a material of a conductive layer used in a capacitive touch panel, a material having a low reflectance and difficult to identify is currently used to form wiring on a transparent substrate or a transparent film.

例如,專利文獻1公開了一種包含高分子膜及透明導電膜的透明導電性膜,該透明導電膜由通過氣相成膜法形成於該高分子膜上的金屬氧化物構成,該透明導電性膜的特徵在於,由金屬氧化物構成的透明導電膜包括由第一金屬氧化物構成的透明導電膜、及設於該第一金屬氧化物之上且由第二金屬氧化物構成的透明導電膜,且,由第二金屬氧化構成的透明導電膜的成膜條件與由第一金屬氧化物構成的透明導電膜的成膜條件不同。並且,還公開了由金屬氧化物構成的透明導電膜是氧化銦-氧化錫(ITO)膜。 For example, Patent Document 1 discloses a transparent conductive film including a polymer film and a transparent conductive film. The transparent conductive film is made of a metal oxide formed on the polymer film by a vapor-phase film forming method. The film is characterized in that the transparent conductive film made of a metal oxide includes a transparent conductive film made of a first metal oxide and a transparent conductive film provided on the first metal oxide and made of a second metal oxide. In addition, the film formation conditions of the transparent conductive film made of the second metal oxide are different from the film formation conditions of the transparent conductive film made of the first metal oxide. It is also disclosed that the transparent conductive film made of a metal oxide is an indium oxide-tin oxide (ITO) film.

然而,近年來具備觸控面板的顯示器不斷趨於大畫面化及高性能化,隨之,作為導電層的材料,在研究使用銅等金屬來代替電阻高的 ITO(例如參照專利文獻2、3)。然而,由於金屬具有金屬光澤,故會有因反射而造成顯示器識別性降低的問題。因此,在研究具有作為導電層的銅等的金屬層的同時,還研究具有由黑色材料構成的黑化層的導電性基板。 However, in recent years, displays equipped with a touch panel have continued to increase the screen size and performance, and as a material for the conductive layer, the use of metals such as copper instead of high-resistance materials has been studied. ITO (for example, refer to Patent Documents 2 and 3). However, since metal has metallic luster, there is a problem that the visibility of the display is reduced due to reflection. Therefore, while studying a metal layer having copper or the like as a conductive layer, a conductive substrate having a blackened layer made of a black material is also studied.

<先前技術文獻> <Prior Art Literature>

<專利文獻> <Patent Literature>

專利文獻1:(日本)特開2003-151358號公報 Patent Document 1: (Japanese Patent Laid-Open No. 2003-151358

專利文獻2:(日本)特開2011-018194號公報 Patent Document 2: (Japanese Patent Laid-Open No. 2011-018194)

專利文獻3:(日本)特開2013-069261號公報 Patent Document 3: (Japanese Patent Application Publication No. 2013-069261)

為了製作出如上述構成配線圖案的金屬配線包含有銅等金屬層及黑化層的導電性基板,需要製備基材上預先疊層有金屬層及黑化層的疊層體基板,並根據金屬配線的圖案,對該金屬層及黑化層進行蝕刻。 In order to produce a conductive substrate including a metal layer such as copper and a blackened layer as the metal wiring constituting the wiring pattern as described above, it is necessary to prepare a multilayer substrate in which a metal layer and a blackened layer are previously laminated on a base material, and the In the pattern of the wiring, the metal layer and the blackened layer are etched.

然而,由於銅等的金屬層及黑化層對蝕刻液的反應性不同,因此無法完全去除黑化層,黑化層的殘渣會殘留於金屬配線間的開口部,導致在該開口部露出的透明基材的可見光透射率降低。 However, metal layers such as copper and blackening layers have different reactivity to the etching solution, so the blackening layer cannot be completely removed, and residues of the blackening layer may remain in the openings between the metal wirings, resulting in exposure of the openings. The visible light transmittance of the transparent substrate is reduced.

鑑於上述先前技術的問題,本發明之一形態其目的在於提供一種金屬配線間露出的透明基材的可見光透射率高的導電性基板。 In view of the above-mentioned problems of the prior art, an object of one aspect of the present invention is to provide a conductive substrate having a high visible light transmittance of a transparent base material exposed between metal wirings.

為了達成上述目的,本發明之一形態提供一種導電性基板,其包括透明基材、形成於該透明基材的至少一個面上的金屬配線,該金屬配線具有銅配線層及黑化配線層疊層而成的構造,該黑化配線層包含鎳及 銅,該金屬配線間露出的該透明基材的可見光透射率為90%以上,且b*為1.0以下。 In order to achieve the above object, an aspect of the present invention provides a conductive substrate including a transparent substrate and metal wiring formed on at least one surface of the transparent substrate, the metal wiring having a copper wiring layer and a blackened wiring layer layer The blackened wiring layer contains nickel and For copper, the visible light transmittance of the transparent substrate exposed between the metal wirings is 90% or more, and b * is 1.0 or less.

根據本發明之一形態,能夠提供金屬配線間露出的透明基材的可見光透射率高的導電性基板。 According to one aspect of the present invention, it is possible to provide a conductive substrate with high visible light transmittance of a transparent substrate exposed between metal wirings.

10A、10B、20A、20B‧‧‧疊層體基板 10A, 10B, 20A, 20B ‧‧‧ laminated substrate

30、40‧‧‧導電性基板 30, 40‧‧‧ conductive substrate

11、11A、11B‧‧‧透明基材 11, 11A, 11B ‧‧‧ transparent substrate

12、12A、12B‧‧‧銅層 12, 12A, 12B‧‧‧ Copper

13、13A、13B、131、132、131A、132A、131B、132B‧‧‧黑化層 13, 13A, 13B, 131, 132, 131A, 132A, 131B, 132B‧‧‧ Blackened layer

14、14A、14B、24、24A、24B‧‧‧金屬疊層體 14, 14A, 14B, 24, 24A, 24B ‧‧‧ metal laminate

32、42A、42B、62‧‧‧銅配線層 32, 42A, 42B, 62‧‧‧ copper wiring layers

33、431A、432A、431B、432B、631、632‧‧‧黑化配線層 33, 431A, 432A, 431B, 432B, 631, 632‧‧‧blackened wiring layer

34、44A、44B‧‧‧金屬配線 34, 44A, 44B‧‧‧ metal wiring

圖1A是本發明實施方式的疊層體基板的剖面圖。 FIG. 1A is a cross-sectional view of a multilayer substrate according to an embodiment of the present invention.

圖1B是本發明實施方式的疊層體基板的剖面圖。 FIG. 1B is a cross-sectional view of a multilayer substrate according to an embodiment of the present invention.

圖2A是本發明實施方式的疊層體基板的剖面圖。 2A is a cross-sectional view of a multilayer substrate according to an embodiment of the present invention.

圖2B是本發明實施方式的疊層體基板的剖面圖。 2B is a cross-sectional view of a multilayer substrate according to the embodiment of the present invention.

圖3是本發明實施方式的導電性基板的剖面圖。 3 is a cross-sectional view of a conductive substrate according to an embodiment of the present invention.

圖4是本發明實施方式的具有網格狀配線的導電性基板的俯視圖。 FIG. 4 is a plan view of a conductive substrate having a grid-like wiring according to an embodiment of the present invention.

圖5A是沿著圖4的A-A’線的剖面圖。 Fig. 5A is a sectional view taken along the line A-A 'in Fig. 4.

圖5B是沿著圖4的A-A’線的剖面圖。 Fig. 5B is a sectional view taken along the line A-A 'in Fig. 4.

圖6A是蝕刻步驟的說明圖。 FIG. 6A is an explanatory diagram of an etching step.

圖6B是蝕刻步驟的說明圖。 FIG. 6B is an explanatory diagram of an etching step.

圖6C是蝕刻步驟的說明圖。 FIG. 6C is an explanatory diagram of an etching step.

圖6D是蝕刻步驟的說明圖。 FIG. 6D is an explanatory diagram of an etching step.

以下,參照附圖來說明本發明的導電性基板及導電性基板製造方法的一實施方式。 Hereinafter, an embodiment of the conductive substrate and the method for manufacturing a conductive substrate according to the present invention will be described with reference to the drawings.

在此,對相同構件賦予相同符號,並省略其部說明。 Here, the same reference numerals are given to the same members, and the description of the parts is omitted.

本實施形態的導電性基板可具有透明基材、及形成於透明基材的至少一個面上的金屬配線。 The conductive substrate of this embodiment may have a transparent base material and a metal wiring formed on at least one surface of the transparent base material.

並且,金屬配線可具有銅配線層及、包含鎳與銅的黑化配線層疊層而成的構造,金屬配線間露出的透明基材的可見光透射率為90%以上,且b*為1.0以下。 In addition, the metal wiring may have a structure of a copper wiring layer and a blackened wiring laminated layer including nickel and copper. The visible light transmittance of the transparent substrate exposed between the metal wirings is 90% or more, and b * is 1.0 or less.

另外,本實施形態中的疊層體基板是指,對銅層等進行圖案化之前在透明基材表面設有銅層及黑化層的金屬疊層體的基板。又,導電性基板意指銅層及黑化層已圖案化成想要的配線圖案的基板,即配線基板。導電性基板包括透明基材未被銅層等覆蓋的區域,因此能夠使光透射,成為透明導電性基板。 In addition, the laminated body substrate in this embodiment means a substrate of a metal laminated body in which a copper layer and a blackened layer are provided on the surface of a transparent base material before a copper layer or the like is patterned. The conductive substrate means a substrate on which a copper layer and a blackened layer have been patterned into a desired wiring pattern, that is, a wiring substrate. Since the conductive substrate includes a region where the transparent substrate is not covered by a copper layer or the like, light can be transmitted to become a transparent conductive substrate.

本實施形態的導電性基板,可以下述方式製作:使用「包括透明基材及形成於透明基材的至少一個面上的金屬疊層體且金屬疊層體具有銅層及包含鎳與銅的黑化層疊層而成的構造」的疊層體基板,對該銅層及黑化層進行圖案化。因此,首先對本實施形態的疊層體基板的構成例進行說明。 The conductive substrate according to this embodiment can be produced by using a metal laminate including a transparent substrate and at least one surface formed on the transparent substrate, and the metal laminate having a copper layer and a layer including nickel and copper. A multilayer substrate having a structure in which a laminated layer is blackened "is used to pattern the copper layer and the blackened layer. Therefore, a configuration example of the multilayer substrate of this embodiment will be described first.

(疊層體基板) (Laminate substrate)

首先,關於本實施形態的疊層體基板包含的各構件進行說明。 First, each member included in the multilayer substrate of this embodiment will be described.

關於透明基材並無特別限定,能夠優選使用可使可見光透射的絕緣體膜、玻璃基板等。 The transparent substrate is not particularly limited, and an insulator film, a glass substrate, or the like that can transmit visible light can be preferably used.

作為可使可見光透射的絕緣體膜,例如可以優選使用從聚醯胺類膜、聚對酞酸乙二酯類膜、聚2,6萘二甲酸乙二酯(polyethylene naphthalate)類膜、環烯烴類膜、聚醯亞胺類膜、聚碳酸酯類膜等中選擇的1種以上的樹脂膜等。尤其是,作為可使可見光透射的絕緣體膜的材料,能夠更優選使用從PET(聚對酞酸乙二酯)、COP(環烯烴聚合物)、PEN(聚2,6萘二甲酸乙二酯)、聚醯亞胺、聚醯胺、聚碳酸酯等中選擇的1種以上。 As the insulator film that can transmit visible light, for example, a polyamine film, a polyethylene terephthalate film, and polyethylene 2,6 naphthalate can be preferably used. One or more resin films selected from naphthalate) films, cycloolefin-based films, polyimide-based films, polycarbonate-based films, and the like. In particular, as a material of the insulator film that can transmit visible light, it is more preferable to use PET (polyethylene terephthalate), COP (cycloolefin polymer), and PEN (polyethylene 2,6 naphthalate). ), Polyimide, polyamidine, polycarbonate, and the like selected from one or more.

關於透明基材的厚度並無特別限定,可根據作為導電性基板時被要求的強度、靜電容量、光的透射率等,任意選擇。作為透明基材的厚度,例如可以是10μm以上200μm以下。尤其是用於觸控面板用途的情況下,透明基材的厚度優選為20μm以上120μm以下,更優選為20μm以上100μm以下。在用於觸控面板用途的情況下,例如格外要求減小顯示器整體厚度的用途時,透明基材的厚度更優選為20μm以上50μm以下。 The thickness of the transparent substrate is not particularly limited, and can be arbitrarily selected according to the strength, capacitance, light transmittance, and the like required as a conductive substrate. The thickness of the transparent substrate may be, for example, 10 μm or more and 200 μm or less. In particular, when it is used for a touch panel application, the thickness of the transparent substrate is preferably 20 μm or more and 120 μm or less, and more preferably 20 μm or more and 100 μm or less. In the case of use for a touch panel application, for example, an application in which the thickness of the entire display is particularly required to be reduced, the thickness of the transparent substrate is more preferably 20 μm or more and 50 μm or less.

透明基材優選具有高的可見光透射率,例如可見光透射率優選為90%以上。其理由在於,透明基材的可見光透射率為90%以上時,例如在用於觸控面板用途的情況下,能夠充分確保顯示器的識別性。 The transparent substrate preferably has a high visible light transmittance. For example, the visible light transmittance is preferably 90% or more. The reason is that when the visible light transmittance of the transparent substrate is 90% or more, for example, when it is used for a touch panel application, the visibility of the display can be sufficiently ensured.

另,透明基材的可見光透射率能夠根據JIS K 7361-1規定的方法進行評價。 The visible light transmittance of the transparent substrate can be evaluated in accordance with a method prescribed by JIS K 7361-1.

其次,關於金屬疊層體進行說明。金屬疊層體可具有銅層及包含鎳與銅的黑化層疊層而成的構造。 Next, a metal laminate will be described. The metal laminate may have a structure including a copper layer and a blackened layer including nickel and copper.

在此首先關於銅層進行說明。 First, the copper layer will be described.

銅層可由銅構成。此外,也可包含起因於靶或鍍液等在製造步驟中混入的不可避免成份。 The copper layer may be composed of copper. In addition, it may contain unavoidable components caused by mixing in a manufacturing process, such as a target or a plating solution.

關於形成銅層的方法無特別限定,但為了避免光透射率的降低,在其他構件與銅層之間最好不配置接著劑。即,優選在其他構件的上 面直接形成銅層。另,可以在黑化層或透明基材的上面形成銅層。因此,銅層優選直接形成於黑化層或透明基材的上面。 The method for forming the copper layer is not particularly limited, but in order to avoid a decrease in light transmittance, it is preferable not to arrange an adhesive between other members and the copper layer. That is, it is preferably on The copper layer is directly formed on the surface. A copper layer may be formed on the blackened layer or the transparent substrate. Therefore, the copper layer is preferably formed directly on the blackened layer or the transparent substrate.

為了在其他構件的上面直接形成銅層,銅層優選具有通過乾式鍍法成膜的銅薄膜層。乾式鍍法並無特別限定,例如能夠採用蒸鍍法、濺鍍法、離子鍍法等。尤其是,濺鍍法易於控制膜厚,因此優選使用濺鍍法。 In order to form a copper layer directly on other members, it is preferable that the copper layer has a copper thin film layer formed by a dry plating method. The dry plating method is not particularly limited, and for example, a vapor deposition method, a sputtering method, an ion plating method, or the like can be used. In particular, since the sputtering method is easy to control the film thickness, the sputtering method is preferably used.

在需要進一步加厚銅層的情況下,可以在乾式鍍法之後採用濕式鍍法,在銅膜層上疊層鍍銅層。具體而言,例如,可以在透明基材或黑化層上通過乾式鍍法形成銅薄膜層,然後以該銅薄膜層作為供電層,採用作為濕式鍍法之一的電鍍法,形成鍍銅層。 In the case of further thickening the copper layer, a wet plating method may be adopted after the dry plating method, and the copper plating layer may be laminated on the copper film layer. Specifically, for example, a copper thin film layer can be formed on a transparent substrate or a blackened layer by a dry plating method, and then the copper thin film layer can be used as a power supply layer, and a copper plating can be formed by using a plating method as one of the wet plating methods. Floor.

另,如上所述在僅採用乾式鍍法進行銅層成膜的情況下,銅層可由銅薄膜層構成。另外,在組合乾式鍍法與濕式鍍法來形成銅層的情況下,銅層可由銅薄膜層及鍍銅層構成。 When the copper layer is formed only by the dry plating method as described above, the copper layer may be composed of a copper thin film layer. When a copper layer is formed by combining a dry plating method and a wet plating method, the copper layer may be composed of a copper thin film layer and a copper plating layer.

如上所述,通過僅採用乾式鍍法,或組合乾式鍍法及濕式鍍法來形成銅層,能夠在透明基材或黑化層上直接形成銅層,而無需使用接著劑。 As described above, by using only a dry plating method, or a combination of a dry plating method and a wet plating method to form a copper layer, a copper layer can be directly formed on a transparent substrate or a blackened layer without using an adhesive.

關於銅層的厚度並無特別限定,於銅層經圖案化形成銅配線層的情況下,可根據對該銅配線層提供的電流大小及配線寬度等,任意選擇。 The thickness of the copper layer is not particularly limited. In the case where the copper layer is patterned to form a copper wiring layer, it can be arbitrarily selected according to the magnitude of the current provided to the copper wiring layer, the wiring width, and the like.

然而,若銅層增厚,則當為了形成配線圖案而進行蝕刻時,由於需要更多的蝕刻時間,因此容易發生側蝕,有時會發生難以形成細線等的問題。因此,銅層的厚度優選為5μm以下,更優選為1μm以下。 However, if the copper layer is thickened, when etching is performed to form a wiring pattern, since more etching time is required, side etching is likely to occur, and problems such as difficulty in forming fine lines may occur. Therefore, the thickness of the copper layer is preferably 5 μm or less, and more preferably 1 μm or less.

另外,尤其從降低導電性基板的電阻值,能夠充分地提供電流的觀點而論,例如銅層的厚度優選為50nm以上,更優選為60nm以上,進而優選為150nm以上。 In addition, in particular, from the viewpoint of reducing the resistance value of the conductive substrate and capable of sufficiently supplying current, for example, the thickness of the copper layer is preferably 50 nm or more, more preferably 60 nm or more, and even more preferably 150 nm or more.

另,在銅層具有如上所述的銅薄膜層及鍍銅層的情況下,銅薄膜層厚度及鍍銅層厚度的合計厚度優選在上述範圍。 When the copper layer has the copper thin film layer and the copper plating layer as described above, the total thickness of the copper thin film layer thickness and the copper plating layer thickness is preferably within the above range.

無論銅層是由銅薄膜層構成的情況,還是由銅薄膜層及鍍銅層構成的情況,關於銅薄膜層的厚度並無特別限定,但例如優選為50nm以上500nm以下。 The thickness of the copper thin film layer is not particularly limited in the case where the copper layer is composed of a copper thin film layer or the copper thin film layer and the copper plating layer, but it is preferably 50 nm to 500 nm, for example.

以下,關於黑化層進行說明。 The blackening layer will be described below.

銅層具有金屬光澤,因此,在透明基材上如果僅是對銅層進行蝕刻來形成金屬配線層,配線會反射光,例如於使用作為觸控面板用配線基板的情況下,會有顯示器的識別性降低的問題。因此,在研究在金屬配線層想要抑制光反射的面設置黑化配線層的方法。 The copper layer has a metallic luster. Therefore, if the metal wiring layer is formed by only etching the copper layer on a transparent substrate, the wiring will reflect light. For example, when a wiring substrate for a touch panel is used, there is a display. Reduced recognition issues. Therefore, a method of providing a blackened wiring layer on the surface of the metal wiring layer where light reflection is to be suppressed is being studied.

然而,銅層與黑化層對蝕刻液的反應性不同,有時無法完全去除黑化層,黑化層的殘渣會殘留於金屬配線間的開口部,因而會有露出於該開口部的透明基材的可見光透射率降低的問題。 However, the reactivity of the copper layer and the blackening layer with respect to the etching solution is different, and the blackening layer cannot be completely removed in some cases. The residue of the blackening layer may remain in the opening portion between the metal wirings, so that the opening portion is transparent. A problem that the visible light transmittance of the substrate is reduced.

因此,本發明的發明人發現,通過將黑化層設成包含鎳與銅的層,並使用規定的蝕刻液,能夠製成露出於金屬配線間開口部的透明基材的可見光透射率高的導電性基板,從而完成了本發明。 Therefore, the inventors of the present invention have found that by providing a blackening layer as a layer containing nickel and copper and using a predetermined etching solution, a transparent substrate having a high visible light transmittance exposed at an opening portion of a metal wiring can be produced. A conductive substrate has completed the present invention.

本實施形態的導電性基板的黑化層可包含鎳與銅,另外還可以包含例如氧。特別是,本實施形態的導電性基板的黑化層亦可由鎳、銅及氧構成。 The blackened layer of the conductive substrate of this embodiment may include nickel and copper, and may further include, for example, oxygen. In particular, the blackened layer of the conductive substrate of this embodiment may be made of nickel, copper, and oxygen.

如上所述,通過黑化層包含鎳與銅,能夠充分抑制銅層表面的光反射,且,在對銅層及黑化層進行圖案化的情況下,亦能夠抑制在透明基材表面產生黑化層的殘渣。 As described above, by including nickel and copper in the blackening layer, light reflection on the surface of the copper layer can be sufficiently suppressed, and even when the copper layer and the blackening layer are patterned, the blackness on the surface of the transparent substrate can be suppressed. Residue of the coating.

關於黑化層的成膜方法並無特別限定,只要是能夠形成包含鎳與銅的層的方法,能夠選擇任意的方法。惟,黑化層優選不透過接著劑就直接形成在透明基材及/或銅層等其他構件的上面。具體而言,作為黑化層的成膜方法,例如能夠使用濕式鍍法或乾式鍍法。若為濕式鍍法之情形,例如能夠使用電鍍法,若為乾式鍍法之情形,則例如能夠使用蒸鍍法、濺鍍法、離子鍍法等。在使用乾式鍍法的情況下,由於膜厚之控制特別容易,因此優選使用濺鍍法。 The method for forming the blackened layer is not particularly limited, and any method can be selected as long as it can form a layer containing nickel and copper. However, the blackened layer is preferably formed directly on the transparent substrate and / or other members such as the copper layer without transmitting the adhesive. Specifically, as a method for forming a blackened layer, for example, a wet plating method or a dry plating method can be used. In the case of a wet plating method, for example, an electroplating method can be used, and in the case of a dry plating method, for example, a vapor deposition method, a sputtering method, or an ion plating method can be used. When a dry plating method is used, since the thickness control is particularly easy, it is preferable to use a sputtering method.

另外,當在疊層體基板中配置複數層黑化層的情況下,同一疊層體基板內包含的複數層黑化層,可由同一成膜方法形成,亦可由不同成膜方法形成。 In addition, when a plurality of blackening layers are arranged in a multilayer substrate, the plurality of blackening layers included in the same multilayer substrate may be formed by the same film forming method or may be formed by different film forming methods.

關於黑化層的厚度並無特別限定,可根據疊層體基板或導電性基板被要求的光反射抑制程度等,任意選擇。 The thickness of the blackening layer is not particularly limited, and can be arbitrarily selected depending on the degree of suppression of light reflection required for the laminated substrate or the conductive substrate.

黑化層的厚度例如優選為15nm以上,更優選為20nm以上。黑化層具有抑制銅層光反射的功能,但黑化層的厚度薄的情況下,有時無法充分抑制銅層的光反射。針對於此,通過將黑化層的厚度設為15nm以上,能夠更確實地抑制銅層表面的反射。 The thickness of the blackened layer is, for example, preferably 15 nm or more, and more preferably 20 nm or more. The blackening layer has a function of suppressing the light reflection of the copper layer. However, when the thickness of the blackening layer is thin, the light reflection of the copper layer may not be sufficiently suppressed in some cases. In view of this, by setting the thickness of the blackened layer to 15 nm or more, it is possible to more reliably suppress reflection on the surface of the copper layer.

又,關於黑化層的厚度的上限值並無特別限定,但超出必要的增厚,會導致形成金屬配線時的蝕刻所需時間延長,導致成本上升。因此,黑化層的厚度優選為70nm以下,更優選為50nm以下。 The upper limit of the thickness of the blackened layer is not particularly limited. However, if it exceeds the necessary thickness, the time required for etching when forming the metal wiring is extended, and the cost is increased. Therefore, the thickness of the blackened layer is preferably 70 nm or less, and more preferably 50 nm or less.

以下,關於疊層體基板的構成例進行說明。 Hereinafter, a configuration example of the multilayer substrate will be described.

如上所述,本實施方式的疊層體基板可具有透明基材、銅層及黑化層。此時,關於在透明基材上疊層銅層及黑化層的順序並無特別限定。又,銅層及黑化層也可以分別形成複數層。然而,為了抑制銅層表面的光反射,優選在銅層表面當中的尤其想抑制光反射的面配置黑化層。在要求特別抑制銅層表面的光反射的情況下,也可製成在銅層的上面及下面形成有黑化層的疊層構造,即黑化層夾著銅層的構造。 As described above, the multilayer substrate of the present embodiment may include a transparent substrate, a copper layer, and a blackened layer. In this case, the order of laminating a copper layer and a blackening layer on a transparent base material is not specifically limited. Moreover, a copper layer and a blackening layer may be formed in multiple layers, respectively. However, in order to suppress light reflection on the surface of the copper layer, it is preferable to arrange a blackening layer on the surface of the copper layer, in particular, on the surface where the light reflection is to be suppressed. When it is required to particularly suppress light reflection on the surface of the copper layer, a laminated structure in which a blackened layer is formed above and below the copper layer, that is, a structure in which the blackened layer sandwiches the copper layer, may be used.

關於具體的構成例,以下參照圖1A、圖1B、圖2A、圖2B進行說明。圖1、圖2表示本實施方式的疊層體基板在與透明基材、銅層、黑化層的疊層方向平行的面的剖面圖的例子。 A specific configuration example will be described below with reference to FIGS. 1A, 1B, 2A, and 2B. FIG. 1 and FIG. 2 show examples of cross-sectional views of a laminated substrate of the present embodiment on a plane parallel to the lamination direction of the transparent substrate, the copper layer, and the blackened layer.

本實施形態的疊層體基板可以具有例如在透明基材的至少一個面上疊層有銅層及黑化層的構造。 The multilayer substrate of this embodiment may have a structure in which a copper layer and a blackened layer are laminated on at least one surface of a transparent substrate, for example.

具體而言,例如圖1A所示的疊層體基板10A,在透明基材11的一個面11a側,可依序疊層銅層12及黑化層13各一層。在此情況下,由銅層12與黑化層13構成金屬疊層體14。 Specifically, for example, in the multilayer substrate 10A shown in FIG. 1A, each of the copper layer 12 and the blackened layer 13 may be sequentially laminated on one surface 11 a side of the transparent base material 11. In this case, the metal layer 14 is constituted by the copper layer 12 and the blackened layer 13.

又,如圖1B所示的疊層體基板10B,在透明基材11的一個面11a側,及為另一個面的另一面11b側,可分別依序疊層銅層12A、12B、及黑化層13A、13B各一層。在此情況下,銅層12A與黑化層13A構成一個面11a側的金屬疊層體14A,銅層12B與黑化層13B構成另一面11b側的金屬疊層體14B。 In addition, as shown in FIG. 1B, the multilayer substrate 10B can sequentially stack copper layers 12A, 12B, and black on one surface 11a side and the other surface 11b side of the transparent substrate 11 respectively. Each of the chemical conversion layers 13A and 13B is one layer. In this case, the copper layer 12A and the blackened layer 13A constitute a metal laminate 14A on one surface 11a side, and the copper layer 12B and the blackened layer 13B constitute a metal laminate 14B on the other surface 11b side.

另,銅層12(12A、12b)、及黑化層13(13A、13B)的疊層順序並不限定於圖1A、圖1B的例子,也可以從透明基材11側開始依序 疊層黑化層13(13A、13B)、銅層12(12A、12B)。 In addition, the lamination order of the copper layers 12 (12A, 12b) and the blackened layer 13 (13A, 13B) is not limited to the example shown in FIGS. 1A and 1B, and may be sequentially started from the transparent substrate 11 side. A blackened layer 13 (13A, 13B) and a copper layer 12 (12A, 12B) are laminated.

又,例如亦可為在透明基材11的一個面側設置有複數層黑化層的構成。在此情況下,可以是在透明基材的至少一個面上,從透明基材側開始依序形成有黑化層、銅層及黑化層的構造。 Further, for example, a configuration may be adopted in which a plurality of blackening layers are provided on one surface side of the transparent base material 11. In this case, a structure in which a blackened layer, a copper layer, and a blackened layer are sequentially formed on at least one surface of the transparent substrate from the transparent substrate side may be employed.

具體而言,例如圖2A所示的疊層體基板20A,在透明基材11的一個面11a側,可以依序疊層第1黑化層131、銅層12及第2黑化層132。在此情況下,由第1黑化層131、銅層12及第2黑化層132構成金屬疊層體24。 Specifically, for example, in the multilayer substrate 20A shown in FIG. 2A, the first blackened layer 131, the copper layer 12, and the second blackened layer 132 may be sequentially laminated on one surface 11 a side of the transparent base material 11. In this case, the metal laminate 24 is configured by the first blackened layer 131, the copper layer 12, and the second blackened layer 132.

另,對第1黑化層及第2黑化層,不進行個別區分而一併顯示時,亦僅記載為黑化層。 It should be noted that when the first blackening layer and the second blackening layer are collectively displayed without being individually distinguished, they are only described as blackening layers.

又,亦可為在透明基材11的兩面疊層有銅層、第1黑化層、第2黑化層的構成。具體而言,如圖2B所示的疊層體基板20B,可在透明基材11的一個面11a側及另一面(另一個面)11b側,分別依序疊層第1黑化層131A、131b、銅層12A、12B、及第2黑化層132A、132B。在此情況下,由第1黑化層131A、銅層12A及第2黑化層132A構成一個面11a側的金屬疊層體24A,由第1黑化層131B、銅層12B及第2黑化層132B構成另一面11b側的金屬疊層體24B。 Moreover, it is good also as a structure which laminated | stacked the copper layer, the 1st blackening layer, and the 2nd blackening layer on both surfaces of the transparent base material 11. Specifically, as shown in FIG. 2B, the multilayer substrate 20B may sequentially laminate the first blackened layers 131A, 131A, and 1b on the one surface 11a side and the other surface (the other surface) 11b side of the transparent substrate 11. 131b, copper layers 12A and 12B, and second blackening layers 132A and 132B. In this case, the first blackened layer 131A, the copper layer 12A, and the second blackened layer 132A constitute a metal laminate 24A on one surface 11a side, and the first blackened layer 131B, the copper layer 12B, and the second black The formation layer 132B constitutes a metal laminate 24B on the other surface 11b side.

另,圖1B、圖2B中表示了在透明基材的兩面疊層銅層及黑化層的情況下,以透明基材11作為對稱面,在透明基材11的上下疊層的層彼此對稱配置的例子,但並不限定於該形態。例如,也可將圖2B中的透明基材11的一個面11a側的構造設成與圖1A的構造同樣的依序疊層有銅層12及黑化層13的形態,將透明基材11的上下疊層的層設成非對稱構造。 In addition, FIG. 1B and FIG. 2B show that when the copper layer and the blackened layer are laminated on both sides of the transparent substrate, the transparent substrate 11 is used as a plane of symmetry, and the layers laminated above and below the transparent substrate 11 are symmetrical to each other. An example of arrangement is not limited to this form. For example, the structure of the one surface 11a side of the transparent base material 11 in FIG. 2B may be provided in a form in which the copper layer 12 and the blackened layer 13 are sequentially laminated in the same manner as the structure of FIG. 1A, and the transparent base material 11 may be formed. The upper and lower layers are set in an asymmetric structure.

至此對本實施方式的疊層體基板進行了說明,本實施形態的疊層體基板中,在透明基材上設有銅層及黑化層,因此能夠抑制銅層的光反射。 The laminated body substrate of this embodiment has been described so far. In the laminated body substrate of this embodiment, since the copper layer and the blackened layer are provided on the transparent substrate, light reflection of the copper layer can be suppressed.

(導電性基板) (Conductive substrate)

以下關於本實施方式的導電性基板進行說明。 The conductive substrate of this embodiment will be described below.

另,本實施形態的導電性基板具有對以上說明的疊層體基板的金屬疊層體進行圖案化而形成有規定配線圖案的金屬配線的形態。因此,本實施形態的導電性基板具有的透明基材、銅配線層及黑化配線層能夠分別採用與疊層體基板中說明的透明基材、銅層及黑化層同樣的材料,或各構件的適當厚度也能夠設成相同範圍。因此,關於上文中已說明的內容,疊層體基板中將省略贅述。 The conductive substrate of the present embodiment has a form in which the metal laminate of the laminate substrate described above is patterned to form a metal wiring having a predetermined wiring pattern. Therefore, as the transparent substrate, the copper wiring layer, and the blackened wiring layer included in the conductive substrate of this embodiment, the same materials as the transparent substrate, the copper layer, and the blackened layer described in the laminate substrate, or each of them can be used. The appropriate thickness of the member can also be set in the same range. Therefore, with regard to what has been described above, the redundant description will be omitted in the laminated substrate.

在此,圖3表示本實施方式的導電性基板的各層在與疊層方向平行的面的剖面圖的構成例。 Here, FIG. 3 shows a configuration example of a cross-sectional view of each layer of the conductive substrate according to the present embodiment on a plane parallel to the lamination direction.

如圖3所示,本實施形態的導電性基板具有透明基材11、形成於透明基材11的至少一個面上的金屬配線34,金屬配線34可具有由銅配線層32、及包含鎳與銅的黑化配線層33疊層而成的構造。 As shown in FIG. 3, the conductive substrate according to this embodiment includes a transparent substrate 11 and metal wirings 34 formed on at least one surface of the transparent substrate 11. The metal wirings 34 may include a copper wiring layer 32, A structure in which a copper blackened wiring layer 33 is laminated.

圖3所示的導電性基板30,例如可對上述圖1A所示的疊層體基板10A的金屬疊層體14進行圖案化而形成。 The conductive substrate 30 shown in FIG. 3 can be formed by, for example, patterning the metal laminate 14 of the laminate substrate 10A shown in FIG. 1A.

另外,在圖3中表示了金屬配線34從透明基材11側依序疊層有銅配線層32、黑化配線層33的例子,但並不限定於該形態。例如,也可為從透明基材11側依序疊層有黑化配線層33、銅配線層32的構成。又,本實施方式的導電性基板例如亦可通過對圖1B、圖2A或圖2B所示的疊層 體基板的金屬疊層體進行圖案化來製作。在使用圖1B或圖2B所示的疊層體基板的情況下,對金屬疊層體14A(24A)、及金屬疊層體14B(24B)進行圖案化,能夠形成在透明基材11的兩面具有金屬配線的導電性基板。另外,在使用例如圖2A、圖2B所示的疊層體基板的情況下,能夠形成具有在黑化配線層間配置有銅配線層的金屬配線的導電性基板。 Although FIG. 3 shows an example in which the copper wiring layer 32 and the blackened wiring layer 33 are sequentially laminated from the transparent substrate 11 side, the metal wiring 34 is not limited to this embodiment. For example, a configuration in which a blackened wiring layer 33 and a copper wiring layer 32 are sequentially laminated from the transparent substrate 11 side may be adopted. The conductive substrate according to the present embodiment may be formed by, for example, laminating the substrate shown in FIG. 1B, FIG. 2A, or FIG. 2B. The metal laminate of the base substrate is patterned to be produced. When the laminated substrate shown in FIG. 1B or FIG. 2B is used, the metal laminated body 14A (24A) and the metal laminated body 14B (24B) can be patterned to form both sides of the transparent substrate 11 A conductive substrate having metal wiring. Moreover, when using the laminated body substrate shown to FIG. 2A and FIG. 2B, for example, the conductive substrate which has the metal wiring in which the copper wiring layer was arrange | positioned between the blackened wiring layers can be formed.

並且,本實施方式的導電性基板,從金屬配線34間露出的透明基材11的可見光透射率優選為90%以上。 In the conductive substrate of the present embodiment, the visible light transmittance of the transparent substrate 11 exposed from between the metal wirings 34 is preferably 90% or more.

其理由在於,金屬配線34間露出的透明基材11的可見光透射率為90%以上時,意味著在通過對金屬疊層體進行圖案化而形成的金屬配線間的開口部的透明基材表面,幾乎不會殘留黑化層的殘渣。並且,從金屬配線34間露出的透明基材11的可見光透射率為90%以上時,例如用作觸控面板用導電性基板的情況下,能夠格外提高顯示器的識別性,因此優選可見光透射率為90%以上。 The reason is that when the visible light transmittance of the transparent base material 11 exposed between the metal wirings 34 is 90% or more, it means that the surface of the transparent base material in the openings between the metal wirings formed by patterning the metal laminate is formed. , Almost no residue of the blackened layer remains. In addition, when the visible light transmittance of the transparent substrate 11 exposed from between the metal wirings 34 is 90% or more, for example, when it is used as a conductive substrate for a touch panel, the visibility of the display can be significantly improved. Therefore, the visible light transmittance is preferred. More than 90%.

在此所說的從金屬配線間露出的透明基材的可見光透射率,是指例如圖3中於金屬配線34間的開口部35露出的透明基材11的可見光透射率。另,在使用如圖1B或圖2B般在透明基材的一個面及另一面的兩面設有金屬疊層體的疊層體基板來製作成導電性基板的情況下,則指於透明基材的一個面及另一面的兩面未被金屬配線覆蓋的部分的可見光透射率。 The visible light transmittance of the transparent substrate exposed from between the metal wirings herein refers to, for example, the visible light transmittance of the transparent substrate 11 exposed from the opening 35 between the metal wirings 34 in FIG. 3. In addition, when a conductive substrate is produced using a multilayer substrate in which a metal laminate is provided on one side and the other side of the transparent substrate as shown in FIG. 1B or 2B, the transparent substrate is referred to as a transparent substrate. The visible light transmittance of the part of one side and the other side of which is not covered by the metal wiring.

又,可見光透射率,是指例如將波長400nm以上700nm以下的光使其波長按規定間隔,具體而言例如按1nm間隔變化,照射到從金屬配線間露出的透明基材,並對各波長的光測得的透射率的平均值。 The visible light transmittance means, for example, that light having a wavelength of 400 nm to 700 nm is changed at a predetermined interval, specifically, for example, at an interval of 1 nm, and is irradiated to a transparent substrate exposed from a metal wiring space, and The average value of light transmission.

又,本實施形態的導電性基板,從金屬配線34間露出的透明基材11的b*,即從金屬配線34間露出的透明基材11的透射光的顏色被轉換成CIE(L*a*b*)表色系時的b*值優選為1.0以下。另,從金屬配線34間露出的透明基材11的b*,是指與上述可見光透射率的情況同樣,例如圖3中於金屬配線34間的開口部35露出的透明基材11的b*。 In the conductive substrate of this embodiment, b * of the transparent substrate 11 exposed from between the metal wirings 34, that is, the color of the transmitted light of the transparent substrate 11 exposed from between the metal wirings 34 is converted into CIE (L * a * b *) The b * value in the color system is preferably 1.0 or less. In addition, b * of the transparent base material 11 exposed from between the metal wirings 34 is the same as the above-mentioned case of visible light transmittance. For example, b * of the transparent base material 11 exposed from the opening 35 between the metal wirings 34 in FIG. 3 .

其理由在於,從金屬配線34間露出的透明基材11的b*為1.0以下時,意味著在通過對金屬疊層體進行圖案化而形成的金屬配線34間的開口部的透明基材表面幾乎不會殘留黑化層的殘渣。並且,在金屬配線34間的開口部35的b*為1.0以下的情況下,例如用作觸控面板用的導電性基板時,能夠格外提高顯示器的識別性,因此優選b*為1.0以下。 The reason is that when b * of the transparent base material 11 exposed from between the metal wirings 34 is 1.0 or less, it means that the transparent base material surface of the opening portion between the metal wirings 34 formed by patterning the metal laminate is formed. Hardly any residue of the blackened layer remains. In addition, when b * of the openings 35 between the metal wirings 34 is 1.0 or less, for example, when it is used as a conductive substrate for a touch panel, the visibility of the display can be significantly improved. Therefore, b * is preferably 1.0 or less.

關於b*的下限值並無特別限定,例如可以是0.1以上。 The lower limit value of b * is not particularly limited, and may be, for example, 0.1 or more.

例如,從金屬配線34間露出的透明基材11的b*,例如可對金屬配線34間的開口部35露出的透明基材11根據JIS Z 8722(2009年改訂)進行測量。 For example, b * of the transparent base material 11 exposed from between the metal wirings 34 can be measured based on JIS Z 8722 (revised in 2009) for the transparent base material 11 exposed from the openings 35 between the metal wirings 34.

另,在使用如圖1B或圖2B般在透明基材的一個面及另一面的兩面設有金屬疊層體的疊層體基板來製作導電性基板的情況下,在透明基材的一個面及另一面的兩面當中未被金屬配線覆蓋的部分進行b*測量。 When a conductive substrate is produced using a multilayer substrate in which a metal laminate is provided on one surface and on the other surface of the transparent substrate as shown in FIG. 1B or FIG. 2B, the conductive substrate is formed on one surface of the transparent substrate. And b * measurement was performed on the two sides of the other side which were not covered by the metal wiring.

又,本實施形態的導電性基板例如可以是具有網格狀金屬配線的導電性基板。以下以形成為具有網格狀金屬配線的導電性基板的情形為例子進行說明。 The conductive substrate of the present embodiment may be, for example, a conductive substrate having a grid-shaped metal wiring. Hereinafter, a case where the conductive substrate is formed as a grid-shaped metal wiring will be described as an example.

例如,能夠使用兩層金屬配線,形成網格狀配線。圖4表示 具體的構成例。圖4表示從銅配線層及黑化配線層的疊層方向的上面側觀察具有網格狀配線的導電性基板40時的圖。圖4所示的導電性基板40具有透明基材11、與圖中Y軸方向平行的複數條金屬配線44A及與X軸方向平行的金屬配線44B。另,金屬配線44A、44B具有銅配線層及黑化配線層,並優選將銅配線層及黑化配線層蝕刻成在與透明基材11配置有金屬配線的面平行的面的剖面為相同形狀。 For example, a two-layer metal wiring can be used to form a grid-shaped wiring. Figure 4 shows Specific configuration examples. FIG. 4 shows a view when the conductive substrate 40 having a grid-like wiring is viewed from the upper surface side in the lamination direction of the copper wiring layer and the blackened wiring layer. The conductive substrate 40 shown in FIG. 4 includes a transparent substrate 11, a plurality of metal wirings 44A parallel to the Y-axis direction in the figure, and metal wirings 44B parallel to the X-axis direction. The metal wirings 44A and 44B include a copper wiring layer and a blackened wiring layer, and the copper wiring layer and the blackened wiring layer are preferably etched to have the same shape in cross section on a surface parallel to the surface on which the metal wiring is arranged on the transparent substrate 11 .

關於透明基材11與金屬配線44A、44B的配置並無特別限定。圖5A、圖5B表示透明基材11與金屬配線的配置構成例。圖5A、圖5B相當於圖4中沿著A-A’線的剖面圖。 The arrangement of the transparent base material 11 and the metal wirings 44A and 44B is not particularly limited. 5A and 5B show examples of the arrangement configuration of the transparent substrate 11 and the metal wiring. 5A and 5B correspond to cross-sectional views taken along line A-A 'in FIG. 4.

首先,如圖5A所示,可在透明基材11的上下面分別配置有銅配線層42A、42B。另外,圖5A中,在銅配線層42A、42B與透明基材11之間,可分別配置第1黑化配線層431A、431B,該第1黑化配線層431A、431B被蝕刻成在與透明基材11配置有金屬配線的面平行的面的剖面成為與銅配線層相同之形狀。又,可在銅配線層42A、42B的與透明基材11相對的面的反側面上分別配置第2黑化配線層432A、432B,該第2黑化配線層432A、432B被蝕刻成在與透明基材11配置有金屬配線的面平行的面的剖面成為與銅配線層相同之形狀。 First, as shown in FIG. 5A, copper wiring layers 42A and 42B may be arranged on the upper and lower surfaces of the transparent substrate 11, respectively. In addition, in FIG. 5A, the first blackened wiring layers 431A and 431B may be respectively disposed between the copper wiring layers 42A and 42B and the transparent substrate 11, and the first blackened wiring layers 431A and 431B are etched to be transparent with The cross-section of the plane parallel to the plane on which the metal wiring is disposed on the base material 11 has the same shape as that of the copper wiring layer. In addition, second blackened wiring layers 432A and 432B may be disposed on opposite sides of the copper wiring layers 42A and 42B, which are opposite to the surface facing the transparent substrate 11, respectively. The second blackened wiring layers 432A and 432B are etched on The cross-section of the surface of the transparent base material 11 on which the metal wiring is arranged is parallel to the shape of the copper wiring layer.

又,如圖5B所示,亦可使用1組透明基材11A、11B,夾著一個透明基材11A在其上下面配置銅配線層42A、42B,且一個銅配線層42B被配置在透明基材11A、11B之間。圖5B的情況也與上述同樣,可在銅配線層42A、42B與透明基材11A、11B之間配置第1黑化配線層431A、431B,該第1黑化配線層431A、431B被蝕刻成在與透明基材11A、11B配置有金 屬配線的面平行的面的剖面成為與銅配線層42A、42相同之形狀。又,可在銅配線層42A、42B的與透明基材11A、11B相對的面的反側面上分別配置第2黑化配線層432A、432B,該第2黑化配線層432A、432B被蝕刻成在與透明基材11A、11B配置有金屬配線的面平行的面的剖面成為與銅配線層42A、42B相同之形狀。 As shown in FIG. 5B, one set of transparent substrates 11A and 11B may be used, and copper wiring layers 42A and 42B may be arranged above and below one transparent substrate 11A, and one copper wiring layer 42B may be arranged on a transparent substrate. Material 11A, 11B. In the case of FIG. 5B as well, the first blackened wiring layers 431A and 431B may be disposed between the copper wiring layers 42A and 42B and the transparent base materials 11A and 11B. The first blackened wiring layers 431A and 431B are etched into Gold is placed on transparent substrates 11A and 11B A cross section of a plane parallel to the plane of the wiring has the same shape as that of the copper wiring layers 42A and 42. Further, second blackened wiring layers 432A and 432B may be disposed on the opposite sides of the copper wiring layers 42A and 42B on the opposite sides of the surfaces facing the transparent base materials 11A and 11B, respectively. The second blackened wiring layers 432A and 432B are etched into A cross section of a surface parallel to a surface where the metal wirings are arranged on the transparent base materials 11A and 11B has the same shape as the copper wiring layers 42A and 42B.

在圖5A、圖5B的任一情況下,由銅配線層42A、第1黑化配線層431A及第2黑化配線層432A構成金屬配線44A,由銅配線層42B、第1黑化配線層431B及第2黑化配線層432B構成金屬配線44B。 In any of FIGS. 5A and 5B, the metal wiring 44A is configured by the copper wiring layer 42A, the first blackened wiring layer 431A, and the second blackened wiring layer 432A, and the copper wiring layer 42B and the first blackened wiring layer 431B and the second blackened wiring layer 432B constitute a metal wiring 44B.

另外,在圖5A、圖5B中表示了配置有第1黑化配線層431A、431B及第2黑化配線層432A、432B的例子,但並不限定於該形態,也可以是不具備任一黑化配線層的構成。然而,優選將黑化配線層配置在銅配線層當中尤其想抑制光反射的面。因此,優選在要求抑制光反射的面設置黑化配線層。 5A and 5B show examples in which the first blackened wiring layers 431A and 431B and the second blackened wiring layers 432A and 432B are arranged. However, the present invention is not limited to this configuration and may not include any of them. Structure of the blackened wiring layer. However, it is preferable to arrange the blackened wiring layer on the surface of the copper wiring layer, in particular, to suppress light reflection. Therefore, it is preferable to provide a blackened wiring layer on a surface required to suppress light reflection.

圖4及圖5A所示的具有網格狀配線的導電性基板,例如可從如圖2B般於透明基材11的兩面具有銅層12A、12B,及黑化層131A、132A、131B、132B的疊層體基板形成。 The conductive substrate with grid-shaped wiring shown in FIGS. 4 and 5A can have copper layers 12A and 12B and blackened layers 131A, 132A, 131B, and 132B on both sides of the transparent substrate 11 as shown in FIG. 2B, for example. The laminate substrate is formed.

若以使用圖2B的疊層體基板20B形成的情況為例進行說明,則首先將透明基材11的一個面11a側的銅層12A及黑化層131A、132A蝕刻成與圖2B中的Y軸方向平行的複數條線狀圖案沿著X軸方向隔著規定間距配置。另,圖2B中的X軸方向,是指與各層的寬度方向平行的方向。又,圖2B中的Y軸方向,是指圖2B中與紙面垂直的方向。 If a case where the multilayer substrate 20B of FIG. 2B is used as an example is described, first, the copper layer 12A and the blackened layers 131A and 132A of the transparent substrate 11 on the one surface 11a side are etched to Y as in FIG. 2B. A plurality of linear patterns parallel to the axial direction are arranged at predetermined intervals along the X-axis direction. The X-axis direction in FIG. 2B refers to a direction parallel to the width direction of each layer. The Y-axis direction in FIG. 2B refers to a direction perpendicular to the paper surface in FIG. 2B.

然後,將透明基材11的另一面11b側的銅層12B及黑化層 131B、132B蝕刻成與圖2B中的X軸方向平行的複數條線狀圖案隔著規定間距沿著Y軸方向配置。 Then, the copper layer 12B and the blackened layer on the other surface 11b side of the transparent base material 11 131B and 132B are etched so that a plurality of linear patterns parallel to the X-axis direction in FIG. 2B are arranged along the Y-axis direction with a predetermined pitch.

通過以上操作,能夠形成圖4、圖5A所示的具有網格狀配線的導電性基板。另,透明基材11的兩面的蝕刻也可同時進行。即,銅層12A、12B、黑化層131A、132A、131B、132B的蝕刻亦可同時進行。 Through the above operations, a conductive substrate having a grid-like wiring as shown in FIGS. 4 and 5A can be formed. In addition, etching of both surfaces of the transparent base material 11 may be performed simultaneously. That is, the etching of the copper layers 12A and 12B and the blackened layers 131A, 132A, 131B, and 132B may be performed simultaneously.

又,若要製成不具備圖5A中的第1黑化配線層431A、431B的導電性基板時,可使用圖1B所示的疊層體基板10B來代替圖2B的疊層體基板20B,同樣地進行蝕刻,藉此來製作。 In addition, if a conductive substrate without the first blackened wiring layers 431A and 431B in FIG. 5A is to be prepared, the multilayer substrate 10B shown in FIG. 1B may be used instead of the multilayer substrate 20B in FIG. 2B. Etching is performed in the same manner to fabricate.

圖4所示的具有網格狀配線的導電性基板,亦可通過使用2片圖1A或圖2A所示的疊層體基板來形成。若以使用2片圖2A的疊層體基板20A來形成導電性基板的情況為例進行說明,則對2片圖2A所示的疊層體基板分別將銅層12及黑化層131、132蝕刻成與X軸方向平行的複數條線狀圖案隔著規定間距沿著Y軸方向配置。然後,以使通過上述蝕刻處理形成於各疊層體基板的線狀圖案彼此交叉的方式,使朝向一致地貼合2片經圖案化的疊層體基板,從而能夠形成具有網格狀配線的導電性基板。關於將2片經圖案化的疊層體基板,即導電性基板貼合時的貼合面並無特別限定。例如,亦可將圖2A中的第2黑化層132的表面132a及透明基材11的未疊層銅層12等的面11b貼合,形成為圖5B所示的構造。 The conductive substrate having a grid-like wiring shown in FIG. 4 can also be formed by using two laminated substrates shown in FIG. 1A or FIG. 2A. Taking a case where a conductive substrate is formed using two laminate substrates 20A of FIG. 2A as an example, the copper laminate 12 and the blackened layers 131 and 132 are respectively used for the two laminate substrates shown in FIG. 2A. A plurality of linear patterns etched parallel to the X-axis direction are arranged along the Y-axis direction with a predetermined pitch. Then, the two patterned laminated substrates are bonded to each other in a uniform direction so that the linear patterns formed on the respective laminated substrates are intersected with each other by the above-mentioned etching process. Conductive substrate. There are no particular limitations on the bonding surface when the two patterned laminated substrates, that is, the conductive substrates are bonded. For example, the surface 132 a of the second blackening layer 132 in FIG. 2A and the surface 11 b of the transparent substrate 11 without the copper layer 12 or the like may be bonded together to form a structure shown in FIG. 5B.

又,例如亦可將透明基材11的未疊層銅層12等的圖2A中的面11b彼此貼合,使剖面為圖5A所示的構造。 In addition, for example, the surfaces 11 b in FIG. 2A of the non-laminated copper layer 12 and the like of the transparent base material 11 may be bonded to each other so that the cross-section has the structure shown in FIG. 5A.

另,關於如圖4、圖5A、圖5B所示的具有網格狀配線的導電性基板中的配線寬度、配線間的距離並無特別限定,例如可根據流入配 線的電流量等進行選擇。 In addition, the wiring width and the distance between wirings in the conductive substrate having grid-like wiring as shown in FIGS. 4, 5A, and 5B are not particularly limited. The amount of current of the wire is selected.

另外,圖4、圖5A、圖5B雖表示組合直線狀金屬配線來形成網格狀配線(配線圖案)的例子,但並不限定於該形態,構成配線圖案的金屬配線可以是任意形狀。例如,為了防止顯示器的圖像間發生波紋(干涉紋),亦可使構成網格狀配線圖案的金屬配線的形狀分別是鋸齒型彎曲的線(鋸齒直線)等各種形狀。 In addition, FIG. 4, FIG. 5A, and FIG. 5B show an example of forming a grid-like wiring (wiring pattern) by combining linear metal wirings, but the invention is not limited to this form, and the metal wirings constituting the wiring pattern may have any shape. For example, in order to prevent ripples (interference lines) from occurring between the images of the display, the shapes of the metal wirings constituting the grid-shaped wiring pattern may be various shapes such as zigzag curved lines (zigzag straight lines).

如上所述具有由2層金屬配線構成的網格狀配線的導電性基板能夠優選用作例如投影型靜電容量式的觸控面板用導電性基板。 As described above, the conductive substrate having the grid-shaped wiring composed of the two-layer metal wiring can be preferably used as a conductive substrate for a touch panel of a projection type, for example.

(導電性基板的製造方法) (Manufacturing method of conductive substrate)

接著,說明本實施形態的導電性基板製造方法之一構成例。 Next, a configuration example of a method for manufacturing a conductive substrate according to this embodiment will be described.

本實施方式的導電性基板製造方法可具有如下之蝕刻步驟:對具有透明基材及形成於透明基材的至少一個面上的金屬疊層體的疊層體基板中的該金屬疊層體進行蝕刻,來形成金屬配線,其中該金屬疊層體具有銅層及包含鎳與銅的黑化層疊層的構造。 The method for manufacturing a conductive substrate according to this embodiment may include an etching step of performing a metal laminate on a multilayer substrate having a transparent substrate and a metal laminate formed on at least one surface of the transparent substrate. The metal wiring is formed by etching, and the metal laminate has a structure of a copper layer and a blackened layer including nickel and copper.

並且,蝕刻步驟可依序具有以下步驟。 In addition, the etching step may have the following steps in order.

第1蝕刻步驟:使用含有從氯化鐵、過氧化氫水、硫酸、鹽酸中選擇的1種以上的第1蝕刻液進行蝕刻。 First etching step: Etching is performed using a first etchant containing one or more kinds selected from ferric chloride, hydrogen peroxide water, sulfuric acid, and hydrochloric acid.

水洗步驟:對疊層體基板進行水洗。 Water washing step: The laminated substrate is washed with water.

第2蝕刻步驟:使用由鹽酸及水構成的pH值為2.5以下的第2蝕刻液進行蝕刻。 Second etching step: Etching is performed using a second etching solution composed of hydrochloric acid and water with a pH of 2.5 or less.

(蝕刻步驟) (Etching step)

關於本實施形態的導電性基板製造方法的蝕刻步驟,以下參照圖6A~ 圖6D進行說明。 Regarding the etching steps of the method for manufacturing a conductive substrate according to this embodiment, referring to FIGS. 6A to 6 below FIG. 6D is described.

如圖6A所示,準備具有透明基材11及形成於透明基材11的至少一個面上的金屬疊層體24的疊層體基板。金屬疊層體24可以具有銅層12及黑化層131、132。在此,圖6A中表示了使用以上說明的圖2A所示的疊層體基板20A的例子,但疊層體基板的構造並不限定於該形態。亦可使用以上說明的具有其他構造的疊層體基板,例如圖1A、圖1B、圖2B所示的疊層體基板。 As shown in FIG. 6A, a laminate substrate having a transparent substrate 11 and a metal laminate 24 formed on at least one surface of the transparent substrate 11 is prepared. The metal laminate 24 may include a copper layer 12 and blackened layers 131 and 132. Here, an example using the laminated substrate 20A shown in FIG. 2A described above is shown in FIG. 6A, but the structure of the laminated substrate is not limited to this form. It is also possible to use a laminate substrate having another structure described above, such as the laminate substrate shown in FIGS. 1A, 1B, and 2B.

另外,如圖6A所示,可在位於金屬疊層體24的與透明基材相對的一個面24a之相反側的另一面24b上,形成具有與形成之金屬配線圖案相應的形狀的阻劑層61(阻劑層形成步驟)。 In addition, as shown in FIG. 6A, a resist layer having a shape corresponding to the formed metal wiring pattern may be formed on the other surface 24b of the metal laminated body 24 opposite to the one surface 24a opposite to the transparent substrate. 61 (resistor layer forming step).

關於阻劑層61的形成方法並無特別限定,例如以層壓法在金屬疊層體24的另一面24b上黏貼感光性乾膜阻劑,形成感光性阻劑層。然後,透過具有形成於感光性阻劑層之金屬配線的配線圖案的光罩(photo mask),照射紫外線,使之感光。 The method for forming the resist layer 61 is not particularly limited. For example, a photosensitive dry film resist is adhered to the other surface 24 b of the metal laminate 24 by a lamination method to form a photosensitive resist layer. Then, it is irradiated with ultraviolet rays through a photo mask having a wiring pattern of metal wirings formed on the photosensitive resist layer to make it photosensitive.

然後,可使感光性阻劑層與顯影液接觸,溶解未照射紫外線的部分,形成具有開口部611的阻劑層61。關於顯影液並無特別限定,例如可使用碳酸鈉水溶液。 Then, the photosensitive resist layer can be brought into contact with the developing solution, and a portion not irradiated with ultraviolet rays can be dissolved to form a resist layer 61 having an opening portion 611. The developer is not particularly limited, and for example, an aqueous sodium carbonate solution can be used.

另外,與圖6A的情況不同,例如使用圖1B等在透明基材的兩面設有金屬疊層體的疊層體基板作為疊層體基板的情況下,可在各金屬疊層體的與透明基材相對的面的相反側面上形成阻劑,實施以下蝕刻步驟。 In addition, unlike the case of FIG. 6A, for example, when a laminate substrate provided with metal laminates on both sides of a transparent substrate as shown in FIG. 1B is used as the laminate substrate, the A resist is formed on the opposite side of the opposite surface of the substrate, and the following etching steps are performed.

然後,如圖6B所示,能夠使用阻劑層61實施第1蝕刻步驟。 Then, as shown in FIG. 6B, the first etching step can be performed using the resist layer 61.

在第1蝕刻步驟中,能夠使用含有從氯化鐵、過氧化氫水、硫酸、鹽酸中選擇的1種以上物質的第1蝕刻液,對金屬疊層體24進行蝕刻。在第1蝕刻步驟中,例如能夠從阻劑層61的上面提供第1蝕刻液,實施蝕刻。或也可將疊層體基板浸漬於第1蝕刻液實施蝕刻。 In the first etching step, the metal laminate 24 can be etched using a first etching solution containing one or more substances selected from ferric chloride, hydrogen peroxide water, sulfuric acid, and hydrochloric acid. In the first etching step, for example, a first etching solution can be supplied from the upper surface of the resist layer 61 to perform etching. Alternatively, the laminated substrate may be immersed in the first etching solution and etched.

通過實施第1蝕刻步驟,如圖6B所示,能夠形成金屬配線64,該金屬配線64具有形狀與上述形成的阻劑層61的圖案對應的銅配線層62、黑化配線層631、632。 By performing the first etching step, as shown in FIG. 6B, the metal wiring 64 can be formed with the copper wiring layer 62 and the blackened wiring layers 631 and 632 having a shape corresponding to the pattern of the resist layer 61 formed as described above.

然而,僅靠第1蝕刻步驟,如圖6B所示,在金屬配線64間的開口部641,有時會產生黑化層131、132等的殘渣65。若在金屬配線64的開口部641產生殘渣65,則透明基材11無法在該開口部641直接露出,透明基材11會因該殘渣65而發生著色等,將該導電性基板用於觸控面板用途的情況下,有時顯示器的識別性會降低。 However, only in the first etching step, as shown in FIG. 6B, residues 65 such as blackened layers 131 and 132 may be generated in the openings 641 between the metal wirings 64. If a residue 65 is generated in the opening 641 of the metal wiring 64, the transparent substrate 11 cannot be directly exposed in the opening 641, and the transparent substrate 11 is colored due to the residue 65. The conductive substrate is used for touch control. In the case of panel use, the visibility of the display may be reduced.

對此,本實施形態的蝕刻步驟,在實施第1蝕刻步驟之後,能夠實施第2蝕刻步驟。惟,為了清除殘留於疊層體基板上的第1蝕刻步驟中使用的第1蝕刻液,優選在實施對疊層體基板進行水洗的水洗步驟之後,實施第2蝕刻步驟。 In contrast, in the etching step of this embodiment, a second etching step can be performed after the first etching step is performed. However, in order to remove the first etching solution used in the first etching step remaining on the laminated substrate, it is preferable to perform the second etching step after the water washing step of washing the laminated substrate with water.

另,關於水洗步驟的具體條件並無特別限定,可將導電性基板供給至裝有水的水洗槽內,進行水洗。又,也可例如向導電性基板的表面噴射水來進行清洗。 The specific conditions of the water washing step are not particularly limited, and the conductive substrate may be supplied into a water washing tank filled with water and washed with water. Moreover, you may wash | clean by spraying water on the surface of a conductive substrate, for example.

水洗步驟之後,實施第2蝕刻步驟之前,也可根據需要,實施去除附著於導電性基板的水的脫水步驟、乾燥步驟等。 After the water washing step and before the second etching step is performed, a dehydration step, a drying step, or the like may be performed as necessary to remove water adhering to the conductive substrate.

接著說明第2蝕刻步驟。 Next, a second etching step will be described.

在第2蝕刻步驟中,能夠使用由鹽酸及水構成的pH值為2.5以下的第2蝕刻液,對金屬配線64間的殘渣65進行蝕刻、清除。 In the second etching step, the residue 65 between the metal wirings 64 can be etched and removed by using a second etching solution composed of hydrochloric acid and water with a pH value of 2.5 or less.

通過第1蝕刻步驟,能夠對金屬疊層體24進行蝕刻,形成具有形狀與所希望的配線圖案對應的金屬配線64的導電性基板。然而,如上所述,在金屬配線64間的開口部641產生殘渣65,殘渣65殘留於金屬配線64間的開口部的狀態下,當將該導電性基板用於觸控面板的用途之情形時,會導致顯示器識別性降低,而成為問題。 In the first etching step, the metal laminate 24 can be etched to form a conductive substrate having metal wirings 64 having a shape corresponding to a desired wiring pattern. However, as described above, when the residues 65 are generated in the openings 641 between the metal wirings 64 and the residues 65 remain in the openings between the metal wirings 64, when the conductive substrate is used for a touch panel application. , Will cause the display visibility to be reduced and become a problem.

因此,本實施形態的導電性基板的製造方法中,使用第2蝕刻液,能夠對金屬配線64間產生的殘渣進行蝕刻、清除。 Therefore, in the method for manufacturing a conductive substrate according to this embodiment, it is possible to etch and remove residues generated between the metal wirings 64 using the second etching solution.

第2蝕刻液,如上所述優選由鹽酸及水構成。其理由在於,殘渣65主要起因於包含鎳與銅的黑化層131、132,殘渣65也是含有鎳與銅作為主要成份,尤其是鎳的含量多。因此,通過使用由鹽酸及水構成的蝕刻液作為第2蝕刻液,能夠更確實地去除殘渣65。又,通過將第2蝕刻液的pH值設為2.5以下,能夠提高與殘渣65的反應性,能夠更加確實地去除殘渣65,故較佳。 As described above, the second etching solution is preferably composed of hydrochloric acid and water. The reason is that the residue 65 mainly originates from the blackened layers 131 and 132 containing nickel and copper, and the residue 65 also contains nickel and copper as the main components, and in particular, the nickel content is large. Therefore, by using an etching solution composed of hydrochloric acid and water as the second etching solution, the residue 65 can be removed more reliably. Further, by setting the pH value of the second etching solution to 2.5 or less, the reactivity with the residue 65 can be improved, and the residue 65 can be removed more reliably, which is preferable.

第2蝕刻液的pH值低時,在去除殘渣時能夠發揮格外高的效果,因此對其下限值並無特別限定,但為了抑制在第2蝕刻步驟中對通過第1蝕刻步驟形成的金屬配線造成損傷,例如可以設成pH值1.0以上。 When the pH value of the second etching solution is low, an extremely high effect can be exerted when removing the residue. Therefore, the lower limit value is not particularly limited, but in order to suppress the metal formed by the first etching step in the second etching step, Damage to the wiring can be set to a pH of 1.0 or higher, for example.

如上所述,通過使黑化層為包含鎳與銅的層,使用由鹽酸及水構成且pH值為2.5以下的蝕刻液作為第2蝕刻液,能夠更確實地去除在金屬配線間地開口部產生的殘渣。因此,能夠獲得該開口部的可見光透射率良好的導電性基板。 As described above, by making the blackening layer a layer containing nickel and copper, and using an etching solution composed of hydrochloric acid and water and having a pH value of 2.5 or less as the second etching solution, the openings between the metal wirings can be removed more reliably. The resulting residue. Therefore, a conductive substrate having a good visible light transmittance at the opening can be obtained.

又,若金屬配線間的開口部殘留有殘渣,則透明基材會泛黃,從金屬配線間露出的透明基材11的b*有時會大於1.0。然而,通過使用上述規定的第2蝕刻液,能夠更確實地去除在金屬配線間的開口部產生的殘渣。因此,能夠使從金屬配線間露出的透明基材11的b*為1.0以下。 In addition, if a residue remains in the opening portion of the metal wiring room, the transparent base material becomes yellow, and b * of the transparent base material 11 exposed from the metal wiring room may be greater than 1.0. However, by using the predetermined second etching solution, it is possible to more reliably remove the residue generated in the opening portion between the metal wiring rooms. Therefore, b * of the transparent base material 11 exposed from the metal wiring can be made 1.0 or less.

第2蝕刻步驟中,除了使用第2蝕刻液作為蝕刻液之外,其他可採用與第1蝕刻步驟之情形相同方式實施。具體而言,例如可從阻劑61的上面提供第2蝕刻液來實施。或可將完成第1蝕刻步驟的疊層體基板浸漬於第2蝕刻液來實施。藉此,如圖6C所示,能夠形成在透明基材11上具有金屬配線64的導電性基板,該金屬配線64具有與阻劑層61相應的圖案的銅配線層62及黑化配線層631、632,且能夠去除存在於金屬配線64間的開口部641的殘渣65。 The second etching step can be performed in the same manner as in the case of the first etching step, except that the second etching solution is used as the etching solution. Specifically, for example, the second etching solution may be provided from the upper surface of the resist 61 and implemented. Alternatively, the laminated substrate having completed the first etching step may be immersed in a second etching solution. Thereby, as shown in FIG. 6C, a conductive substrate having metal wiring 64 on the transparent substrate 11 can be formed. The metal wiring 64 has a copper wiring layer 62 and a blackened wiring layer 631 having a pattern corresponding to the resist layer 61. , 632, and the residue 65 existing in the opening portion 641 between the metal wirings 64 can be removed.

完成第2蝕刻步驟後,能夠去除阻劑(阻劑去除步驟)。 After the second etching step is completed, the resist can be removed (resistor removing step).

關於去除阻劑的方法並無特別限定,例如能夠使用氫氧化鈉水溶液等,剝離、去除感光性阻劑。藉此,如圖6D所示,能夠獲得在透明基材11上設有金屬配線64的導電性基板,該金屬配線64具有黑化配線層631、632及銅配線層62。 The method of removing the resist is not particularly limited, and for example, a photosensitive resist can be peeled off and removed using an aqueous sodium hydroxide solution or the like. As a result, as shown in FIG. 6D, a conductive substrate having metal wirings 64 provided on the transparent substrate 11 can be obtained. The metal wirings 64 include blackened wiring layers 631 and 632 and a copper wiring layer 62.

又,本實施方式的導電性基板的製造方法中,亦可根據需要,而進一步具有任意的步驟。例如,可具有下述之疊層體基板製造步驟:製造提供給以上說明的蝕刻步驟的疊層體基板。 Moreover, in the manufacturing method of the conductive substrate of this embodiment, you may further have an arbitrary process as needed. For example, there may be a laminated substrate manufacturing step of manufacturing a laminated substrate provided to the etching step described above.

(疊層體基板製造步驟) (Laminate substrate manufacturing steps)

疊層體基板製造步驟可具有以下步驟。另,疊層體基板製造步驟相當於上述本實施方式的疊層體基板製造方法。 The laminated substrate manufacturing step may include the following steps. In addition, the manufacturing method of a laminated body substrate corresponds to the manufacturing method of the laminated body substrate of this embodiment mentioned above.

銅層形成步驟:在透明基材的至少一個面上形成銅層。 Step of forming a copper layer: forming a copper layer on at least one surface of a transparent substrate.

黑化層形成步驟:在透明基材的至少一個面上形成黑化層。 Step of forming a blackened layer: forming a blackened layer on at least one surface of a transparent substrate.

另,於疊層體基板中,在透明基材上配置銅層及黑化層時的疊層順序並無特別限定。又,銅層與黑化層也可分別形成複數層。因此,對上述銅層形成步驟及黑化層形成步驟的實施順序、實施次數並無特別限定,可配合形成的疊層體基板的構造,以任意的次數、時機實施。 Moreover, in a laminated body substrate, the order of lamination when a copper layer and a blackening layer are arrange | positioned on a transparent base material is not specifically limited. Moreover, a copper layer and a blackening layer may be formed in multiple layers, respectively. Therefore, there is no particular limitation on the implementation order and the number of times of the steps of forming the copper layer and the blackened layer, and the structure can be carried out at any number of times in accordance with the structure of the laminated substrate to be formed.

以下,說明各步驟。 Each step is described below.

首先,說明銅層形成步驟。 First, a copper layer forming step is explained.

在銅層形成步驟中,可在透明基材的至少一個面上形成銅層。 In the copper layer forming step, a copper layer may be formed on at least one side of the transparent substrate.

另,關於提供給銅層形成步驟或黑化層形成步驟的透明基材的種類並無特別限定,如上所述,能夠優選使用可使可見光透射的樹脂基板(樹脂膜)或玻璃基板等。亦可根據需要將透明基材預先切成任意的尺寸等。 The type of the transparent substrate provided to the copper layer forming step or the blackening layer forming step is not particularly limited. As described above, a resin substrate (resin film) or a glass substrate that can transmit visible light can be preferably used. If necessary, the transparent substrate may be cut into any size in advance.

並且,如上所述,銅層優選具有銅薄膜層。又,銅層也可具有銅薄膜層及鍍銅層。因此,銅層形成步驟例如可具有通過乾式鍍法來形成銅薄膜層的銅薄膜層形成步驟。又,銅層形成步驟也可具有「通過乾式鍍法來形成銅薄膜層的銅薄膜層形成步驟」及「以該銅薄膜層作為供電層,通過為濕式鍍法之一種的電鍍法來形成鍍銅層的鍍銅層形成步驟」。 As described above, the copper layer preferably has a copper thin film layer. The copper layer may include a copper thin film layer and a copper plating layer. Therefore, the copper layer forming step may include, for example, a copper thin film layer forming step of forming a copper thin film layer by a dry plating method. The copper layer forming step may include a "copper thin film layer forming step of forming a copper thin film layer by a dry plating method" and "the copper thin film layer is used as a power supply layer and is formed by an electroplating method which is one of the wet plating methods. Copper plating layer forming step ".

關於在銅薄膜層形成步驟中採用的乾式鍍法並無特別限定,例如能夠採用蒸鍍法、濺鍍法或離子鍍法等。另,作為蒸鍍法可優選使用真空蒸鍍法。作為在銅薄膜層形成步驟中採用的乾式鍍法,由於膜厚 之控制特別容易,因此更優選使用濺鍍法。 The dry plating method used in the copper thin film layer forming step is not particularly limited, and for example, a vapor deposition method, a sputtering method, an ion plating method, or the like can be used. As the vapor deposition method, a vacuum vapor deposition method can be preferably used. As a dry plating method used in the copper thin film layer forming step, The control is particularly easy, so it is more preferable to use a sputtering method.

接著,說明形成鍍銅層的鍍銅層形成步驟。關於藉由濕式鍍法進行鍍銅層形成步驟的條件,即,例如電鍍處理的條件並無特別限定,可以採用常用方法中的諸條件。例如,將形成有銅薄膜層的基材放入裝有鍍銅液的鍍槽中,並通過控制電流密度、基材的搬送速度,來形成鍍銅層。 Next, a copper plating layer forming step for forming a copper plating layer will be described. Regarding the conditions for performing the copper plating layer forming step by the wet plating method, that is, for example, the conditions for the electroplating treatment are not particularly limited, and various conditions in common methods can be adopted. For example, the base material on which the copper thin film layer is formed is placed in a plating bath containing a copper plating solution, and the current density and the transfer speed of the base material are controlled to form a copper plating layer.

接下來,說明黑化層形成步驟。 Next, a blackening layer forming step is explained.

如上所述,黑化層形成步驟是在透明基材的至少一個面側進行黑化層成膜的步驟。關於黑化層的成膜方法並無特別限定,只要是能夠形成為包含鎳與銅的方法,則能夠選擇任意的方法。然而,優選在透明基材及/或銅層等的其他構件上面,不利用接著劑就直接形成黑化層。因此,可根據黑化層成膜時的基底層的構成等,選擇成膜方法,作為黑化層的成膜方法例如能夠採用濕式鍍法或乾式鍍法。若為濕式鍍法的情況,則例如可採用電鍍法,若為乾式鍍法的情況,則例如可採用蒸鍍法、濺鍍法、離子鍍法等。在採用乾式鍍法的情況下,由於膜厚之控制特別容易,因此優選使用濺鍍法。又,黑化層例如亦可包含氧,在通過乾式鍍法來形成不僅包含鎳與銅還包含氧的黑化層的情況下,例如能夠採用反應性濺鍍法來形成該黑化層。形成含氧的黑化層的情況下,可先在黑化層的成膜氛圍中,例如在非活性氣體中添加氧。作為非活性氣體能夠使用氬等。 As described above, the blackening layer forming step is a step of forming a blackening layer film on at least one side of the transparent substrate. The method for forming the blackening layer is not particularly limited, and any method can be selected as long as it can be formed to include nickel and copper. However, it is preferable to directly form a blackened layer on a transparent substrate and / or other members such as a copper layer without using an adhesive. Therefore, the film formation method can be selected according to the configuration of the base layer and the like when the blackened layer is formed. For example, a wet plating method or a dry plating method can be adopted as the film formation method of the blackened layer. In the case of a wet plating method, for example, an electroplating method can be used, and in the case of a dry plating method, for example, a vapor deposition method, a sputtering method, an ion plating method, or the like can be used. When a dry plating method is used, since the thickness control is particularly easy, it is preferable to use a sputtering method. The blackened layer may include oxygen, for example. When a blackened layer containing not only nickel and copper but also oxygen is formed by a dry plating method, the blackened layer can be formed by, for example, a reactive sputtering method. When forming an oxygen-containing blackening layer, oxygen may be added to the film-forming atmosphere of the blackening layer, for example, in an inert gas. As the inert gas, argon or the like can be used.

另外,在疊層體基板中配置複數層黑化層的情況下,同一疊層體基板內包含的複數層黑化層可藉由相同的成膜方法形成,也可藉由不同的成膜方法形成。 In addition, when a plurality of blackening layers are arranged in a multilayer substrate, the plurality of blackening layers included in the same multilayer substrate may be formed by the same film formation method, or may be formed by different film formation methods. form.

(貼合步驟) (Laminating step)

又,如上所述,亦可準備2片例如圖1A、圖2A所示的在透明基材11的一個面側具有銅層、黑化層的疊層體基板,並對金屬疊層體進行圖案化獲得所希望的金屬配線之後,進行貼合,形成具有網格狀配線的導電性基板。 Further, as described above, two laminated substrates having a copper layer and a blackened layer on one surface side of the transparent base material 11 as shown in FIGS. 1A and 2A may be prepared, for example, and a metal laminated body may be patterned. After obtaining a desired metal wiring, bonding is performed to form a conductive substrate having a grid-like wiring.

如上所述,對2片經圖案化的疊層體基板進行貼合的情況下,亦可具有對2片經圖案化的疊層體基板進行貼合的貼合步驟。 As described above, when the two patterned laminated substrates are bonded, there may be a bonding step of bonding the two patterned laminated substrates.

關於在貼合步驟中對2片經圖案化的疊層體基板進行貼合的方法並無特別限定,例如能夠使用接著劑等進行接著。 The method of bonding two patterned laminated substrates in the bonding step is not particularly limited, and for example, bonding can be performed using an adhesive or the like.

以上說明了本實施方式的導電性基板的製造方法。根據本實施方式的導電性基板的製造方法,能夠減少金屬配線間的開口部的殘渣。因此,能夠提供從金屬配線間露出的透明基材的可見光透射率高且b*為1.0以下的導電性基板。從而,例如將本實施形態的導電性基板用作觸控面板用的導電性基板,將其配置於顯示器的顯示面上時,能夠製成抑制顯示器之識別性降低的導電性基板。 The manufacturing method of the conductive substrate of this embodiment has been described above. According to the manufacturing method of the conductive substrate of this embodiment, it is possible to reduce the residue in the opening portion between the metal wirings. Therefore, it is possible to provide a conductive substrate having a high visible light transmittance and a b * of 1.0 or less from the transparent substrate exposed from the metal wiring. Therefore, for example, when the conductive substrate of the present embodiment is used as a conductive substrate for a touch panel, and it is arranged on the display surface of a display, it is possible to produce a conductive substrate that suppresses a decrease in the visibility of the display.

[實施例] [Example]

以下舉具體的實施例、比較例進行說明,但本發明並不限定於這些實施例。 Specific examples and comparative examples will be described below, but the present invention is not limited to these examples.

(評價方法) (Evaluation method)

對實施例、比較例中製作的試樣,按以下方法進行了評價。 The samples produced in the examples and comparative examples were evaluated by the following methods.

(1)露出於金屬配線間的開口部的透明基材的可見光透射率 (1) Visible light transmittance of a transparent substrate exposed in an opening portion between metal wirings

在以下各實施例、比較例中,對具有圖2B的構造的疊層體基板的金屬疊層體24A、24B進行圖案化,製作了具有圖5A所示之剖面構造的導電性 基板。因此,在圖5A所示的導電性基板中的金屬配線44A的開口部51,即透明基材11的下面未被金屬配線44B覆蓋的部分,實施了可見光透射率的測量。即,在透明基材11上下面的未被金屬配線44A、44B覆蓋的部分,實施了可見光透射率的測量。 In each of the following examples and comparative examples, the metal laminates 24A and 24B of the laminate substrate having the structure of FIG. 2B were patterned to produce conductive materials having the cross-sectional structure shown in FIG. 5A. Substrate. Therefore, in the conductive substrate shown in FIG. 5A, the opening portion 51 of the metal wiring 44A, that is, a portion of the lower surface of the transparent substrate 11 that is not covered by the metal wiring 44B, is subjected to measurement of visible light transmittance. That is, the visible light transmittance was measured on the upper and lower portions of the transparent substrate 11 that were not covered by the metal wirings 44A and 44B.

測量係藉由分光光度計(島津製作所製造,型號:UV-2600),將波長400nm以上700nm以下的光,以使其波長按1nm的單位變化的方式,照射到透明基材11,測量透射率並算出其平均值,作為露出於透明基材間開口部的透明基材的可見光透射率。 The measurement is performed with a spectrophotometer (manufactured by Shimadzu Corporation, model: UV-2600). The transparent substrate 11 is irradiated with light having a wavelength of 400 nm to 700 nm so that its wavelength is changed in units of 1 nm, and the transmittance is measured. The average value was calculated as the visible light transmittance of the transparent substrate exposed at the opening between the transparent substrates.

(2)露出於金屬配線間開口部的透明基材的b*值 (2) b * value of the transparent substrate exposed at the opening of the metal wiring room

使用分光測色計,根據JIS Z 8722,測量了露出於金屬配線間開口部的透明基材的b*值。 Using a spectrophotometer, the b * value of the transparent substrate exposed at the opening portion of the metal wiring room was measured in accordance with JIS Z 8722.

(試樣的製作條件) (Sample preparation conditions)

作為實施例、比較例,按以下說明的條件製作了導電性基板,並按照上述評價方法進行了評價。 As examples and comparative examples, conductive substrates were produced under the conditions described below, and evaluated according to the above-mentioned evaluation methods.

[實驗例1] [Experimental Example 1]

製作了以下所示之實驗例1-1~實驗例1-6的導電性基板,並進行了評價。 The conductive substrates of Experimental Examples 1-1 to Experimental Examples 1-6 shown below were produced and evaluated.

實驗例1-1~實驗例1-3是實施例,實驗例1-4~實驗例1-6是比較例。 Experimental examples 1-1 to 1-3 are examples, and experimental examples 1-4 to 1-6 are comparative examples.

(實驗例1-1) (Experimental Example 1-1)

按照以下程序,製作了具有圖5A所示的剖面構造的導電性基板。 According to the following procedure, a conductive substrate having a cross-sectional structure shown in FIG. 5A was produced.

(1)疊層體基板製造步驟 (1) Laminate substrate manufacturing steps

(1-1)第1黑化層形成步驟 (1-1) First blackening layer forming step

首先,在厚度100μm的聚對酞酸乙二酯樹脂(PET)製的透明基材的一面及位於該一面之相反側的另一面的兩個面上,形成了第1黑化層。 First, a first blackened layer was formed on one surface of a transparent substrate made of polyethylene terephthalate resin (PET) with a thickness of 100 μm and on the other surface on the opposite side of the one surface.

另,對作為透明基材使用的聚對酞酸乙二酯樹脂製透明基材,根據JIS K 7361-1規定的方法評價其可見光透射率,結果為97%。 In addition, the transparent substrate made of polyethylene terephthalate resin used as the transparent substrate was evaluated for visible light transmittance according to the method specified in JIS K 7361-1, and the result was 97%.

第1黑化層係使用包含鎳70質量%及銅30質量%的鎳銅合金靶,藉由濺鍍法成膜。成膜時,首先,將預熱至60℃去除了水份的上述透明基材設置在濺鍍裝置的腔室內。接下來,對腔室內進行排氣至1×10-4Pa,然後向腔室內導入氬與氧的混合氣體使之成為0.3Pa,進行了成膜。另,以使混合氣體中的氧含量成為30體積%的方式,混合氬氣及氧氣來使用。 The first blackening layer was formed by a sputtering method using a nickel-copper alloy target containing 70% by mass of nickel and 30% by mass of copper. At the time of film formation, first, the above-mentioned transparent substrate from which moisture was removed, which was preheated to 60 ° C., was set in a chamber of a sputtering apparatus. Next, the chamber was evacuated to 1 × 10 -4 Pa, and then a mixed gas of argon and oxygen was introduced into the chamber to 0.3 Pa, and film formation was performed. In addition, argon and oxygen are mixed and used so that the oxygen content in the mixed gas becomes 30% by volume.

形成了厚度為20nm的第1黑化層131。 A first blackening layer 131 having a thickness of 20 nm was formed.

(1-2)銅層形成步驟(銅薄膜層形成步驟) (1-2) Copper layer forming step (copper thin film layer forming step)

接下來,在形成有第1黑化層的透明基材的各第1黑化層上,形成了銅薄膜層作為銅層。 Next, a copper thin film layer was formed as a copper layer on each of the first blackened layers of the transparent substrate on which the first blackened layer was formed.

關於銅層,除了使用了銅靶作為靶,以及用氬氣代替了氬氣與氧氣的混合氣體外,其他皆按照與第1黑化層之情形相同的方式,藉由濺鍍法在第1黑化層的上面形成了厚度為500nm的銅層。 Regarding the copper layer, except that a copper target was used as the target, and argon gas was used instead of the mixed gas of argon and oxygen, the other methods were the same as those of the first blackened layer. A copper layer having a thickness of 500 nm was formed on the blackened layer.

(1-3)第2黑化層形成步驟 (1-3) Second blackening layer forming step

接下來,在各銅層上形成了第2黑化層。 Next, a second blackening layer was formed on each copper layer.

第2黑化層形成步驟係按照與第1黑化層形成步驟之情形相同的條件來實施,在銅層上形成了厚度為20nm的第2黑化層。 The second blackening layer forming step is performed under the same conditions as in the case of the first blackening layer forming step, and a second blackening layer having a thickness of 20 nm is formed on the copper layer.

藉由以上步驟,如圖2B所示,製作了在透明基材11的一面11a及另一面11b的兩個面上分別配置有金屬疊層體24A、24B的疊層體 基板20B。另,金屬疊層體24A、24B分別依序疊層有第1黑化層131A、131B、銅層12A、12B、第2黑化層132A、132B。 Through the above steps, as shown in FIG. 2B, a laminate in which the metal laminates 24A and 24B are respectively arranged on two surfaces of one surface 11 a and the other surface 11 b of the transparent substrate 11 is prepared. Substrate 20B. The metal laminates 24A and 24B are sequentially laminated with first blackened layers 131A and 131B, copper layers 12A and 12B, and second blackened layers 132A and 132B, respectively.

將製作的疊層體基板切成100mm見方,提供給以下的蝕刻步驟。 The produced multilayer substrate was cut into 100 mm squares and provided to the following etching steps.

(2)蝕刻步驟 (2) Etching step

(2-1)阻劑層形成步驟 (2-1) Resistor layer forming step

接下來,在圖2B所示的疊層體基板20B中,在金屬疊層體24A、24B的與透明基材11相對的一面的反側的另一面A及面B上,形成了形狀與形成的金屬配線圖案對應的阻劑層。 Next, in the multilayer substrate 20B shown in FIG. 2B, the shapes and formations are formed on the other surfaces A and B of the metal laminates 24A and 24B on the opposite side of the surface opposite to the transparent substrate 11. Resist layer corresponding to the metal wiring pattern.

另,本實施方式中製作了圖4、圖5A所示的導電性基板,在透明基材11的一面11a側形成有與Y軸平行的複數條直線狀的金屬配線44A,在另一面11b側形成有與X軸平行的複數條直線形狀的金屬配線44B。因此,以成為對應於該金屬配線的形狀形成了阻劑層。 In this embodiment, a conductive substrate shown in FIG. 4 and FIG. 5A is produced. A plurality of linear metal wirings 44A parallel to the Y axis are formed on one surface 11a side of the transparent base material 11 and on the other surface 11b side. A plurality of linear metal wirings 44B that are parallel to the X axis are formed. Therefore, a resist layer was formed in a shape corresponding to the metal wiring.

形成阻劑層時,首先在圖2B所示的疊層體基板20B的金屬疊層體24A、24B的面A、面B上,藉由層壓法黏貼感光性乾膜阻劑,形成感光性阻劑層。然後,透過具有形成在感光性阻劑層的金屬配線的配線圖案的光罩,照射紫外線,使之感光。然後,使感光性阻劑層與1質量%的碳酸鈉水溶液接觸,溶解未照射紫外線的部分,形成了阻劑圖案。 When the resist layer is formed, first, a photosensitive dry film resist is adhered to the surface A and the surface B of the metal laminates 24A and 24B of the multilayer substrate 20B shown in FIG. 2B by a lamination method to form a photosensitive layer. Resistor layer. Then, it is irradiated with ultraviolet rays through a mask having a wiring pattern of metal wirings formed on the photosensitive resist layer to make it photosensitive. Then, the photosensitive resist layer was brought into contact with a 1% by mass sodium carbonate aqueous solution, and a portion not irradiated with ultraviolet rays was dissolved to form a resist pattern.

(2-2)第1蝕刻步驟 (2-2) First etching step

然後,使用製作的阻劑層實施了第1蝕刻步驟。 Then, the first etching step was performed using the prepared resist layer.

在第1蝕刻步驟中,使用由氯化鐵(ferric chloride)5質量%、鹽酸3質量%、其餘為離子交換水構成的第1蝕刻液,對金屬疊層體24A、 24B進行了蝕刻。 In the first etching step, a first etching solution composed of 5 mass% of ferric chloride, 3 mass% of hydrochloric acid, and the remainder being ion-exchanged water was used to apply a metal laminate 24A, 24B is etched.

在第1蝕刻步驟中,通過將上述配置有阻劑的疊層體基板浸漬在加溫至30℃的上述第1蝕刻液30秒,對金屬疊層體24A、24B實施了蝕刻,如此形成的金屬配線間露出有透明基材。 In the first etching step, the metal laminates 24A and 24B are etched by immersing the laminated substrate on which the resist is disposed in the first etching solution heated to 30 ° C. for 30 seconds. A transparent substrate is exposed between the metal wiring rooms.

(2-3)水洗步驟 (2-3) Washing steps

完成第1蝕刻步驟之後,為了去除附著的第1蝕刻液,在裝有足量的離子交換水的水洗槽,藉由流水對經圖案化的疊層體基板進行清洗10秒鐘。水洗後,對附著的水份進行脫水、乾燥,供給於第2蝕刻步驟。 After the first etching step is completed, in order to remove the adhered first etching solution, the patterned laminate substrate is washed with flowing water in a water washing tank containing a sufficient amount of ion-exchanged water for 10 seconds. After washing with water, the attached moisture is dehydrated, dried, and supplied to the second etching step.

(2-4)第2蝕刻步驟 (2-4) Second etching step

完成水洗步驟之後,使用由鹽酸及離子交換水構成且pH值為2.5的第2蝕刻液,對金屬配線間的殘渣進行了蝕刻。 After the water washing step was completed, the residue between the metal wirings was etched using a second etching solution composed of hydrochloric acid and ion-exchanged water and having a pH of 2.5.

於第2蝕刻步驟,係通過將上述完成水洗步驟後的經圖案化的疊層體基板浸漬於室溫(23℃)的上述第2蝕刻液10秒鐘來實施。 In the second etching step, the patterned laminate substrate after the completion of the water washing step is immersed in the second etching solution at room temperature (23 ° C.) for 10 seconds.

(2-5)阻劑去除步驟 (2-5) Resist removal step

完成第2蝕刻步驟之後,使用4質量%的氫氧化鈉水溶液將阻劑剥離、去除。並且,去除阻劑之後,採用與水洗步驟之情形同樣的方式,藉由離子交換水,再次對獲得的導電性基板進行了清洗、脫水、乾燥。 After the second etching step is completed, the resist is peeled off and removed using a 4% by mass sodium hydroxide aqueous solution. After removing the resist, the obtained conductive substrate was cleaned, dehydrated, and dried again by ion-exchanged water in the same manner as in the case of the water washing step.

關於通過實施以上步驟獲得的導電性基,對露出於金屬配線間開口部的透明基材的可見光透射率,及b*進行了評價。其結果如表1所示。 Regarding the conductive group obtained by performing the above steps, the visible light transmittance and b * of the transparent substrate exposed at the opening portion of the metal wiring room were evaluated. The results are shown in Table 1.

(實驗例1-2、實驗例1-3) (Experimental Example 1-2, Experimental Example 1-3)

除了調整鹽酸的添加量,使第2蝕刻步驟中使用的第2蝕刻液的pH值 為表1所示的各實驗例的值外,其他皆按照與實驗例1-1相同的方式製作了導電性基板,並進行了評價,其結果如表1所示。 In addition to adjusting the amount of hydrochloric acid, the pH of the second etching solution used in the second etching step is adjusted. Except for the values of each experimental example shown in Table 1, a conductive substrate was produced and evaluated in the same manner as in Experimental Example 1-1. The results are shown in Table 1.

(實驗例1-4) (Experimental Examples 1-4)

除了未實施第2蝕刻步驟,僅實施了至水洗步驟為止的處理外,其他皆按照與實驗例1-1相同的方式,製作了導電性基板,並進行了評價,其結果如表1所示。 A conductive substrate was produced and evaluated in the same manner as in Experimental Example 1-1 except that the second etching step was not performed and only the processing up to the water washing step was performed. The results are shown in Table 1. .

(實驗例1-5、實驗例1-6) (Experimental Examples 1-5, Experimental Examples 1-6)

除了調整鹽酸的添加量,使第2蝕刻步驟中使用的第2蝕刻液的pH值為表1所示的各實驗例的值外,其他皆按照與實驗例1-1相同的方式製作了導電性基板,並進行了評價。其結果如表1所示。 Except that the amount of hydrochloric acid was adjusted so that the pH value of the second etching solution used in the second etching step was the value of each experimental example shown in Table 1, the other conductive materials were produced in the same manner as in Experimental Example 1-1. Substrates were evaluated. The results are shown in Table 1.

[實驗例2] [Experimental Example 2]

製作了以下所示的實驗例2-1~實驗例2-5的導電性基板,並進行了評價。 The conductive substrates of Experimental Examples 2-1 to 2-5 shown below were produced and evaluated.

實驗例2-1~實驗例2-5均為比較例。 Experimental Examples 2-1 to 2-5 are comparative examples.

(實驗例2-1~實驗例2-5) (Experimental Example 2-1 to Experimental Example 2-5)

作為第2蝕刻步驟中使用的第2蝕刻液,使用了由硫酸及離子交換水構成的蝕刻液,並調整硫酸的添加量,以使該蝕刻液的pH值為表2所示的各實驗例的值,其他皆按照與實驗例1-1相同的方式至作了導電性基板,並進行了評價。其結果如表2所示。 As the second etching solution used in the second etching step, an etching solution composed of sulfuric acid and ion-exchanged water was used, and the amount of sulfuric acid added was adjusted so that the pH value of the etching solution is each experimental example shown in Table 2. The other values were evaluated in the same manner as in Experimental Example 1-1 until a conductive substrate was made. The results are shown in Table 2.

若根據表1所示的結果,則可確認到未實施第2蝕刻步驟的實驗例1-4的金屬配線間開口部的透明基材的可見光透射率比實施了第2蝕刻步驟的其他實驗例低。 Based on the results shown in Table 1, it was confirmed that the visible light transmittance of the transparent substrate in the opening portion of the metal wiring room in Experimental Example 1-4 in which the second etching step was not performed was higher than that in the other experimental examples in which the second etching step was performed. low.

並且,通過比較實驗例1-1~實驗例1-3、實驗例1-5、實驗例1-6,可確認到通過在第2蝕刻步驟中使用pH值為2.5以下的第2蝕刻液,可使金屬配線間的透明基材的可見光透射率達到90.0%以上。相對於此,當使用pH值超過2.5的第2蝕刻液的情況下,可確認到可見光透射率降低至 89%左右。 Furthermore, by comparing Experimental Examples 1-1 to 1-3, Experimental Examples 1-5, and Experimental Examples 1-6, it was confirmed that by using the second etching solution having a pH of 2.5 or less in the second etching step, The visible light transmittance of the transparent substrate between the metal wirings can be 90.0% or more. In contrast, when a second etching solution having a pH value of more than 2.5 was used, it was confirmed that the visible light transmittance was reduced to About 89%.

又,關於金屬配線間的透明基材的b*,可確認到通過在第2蝕刻步驟中使用pH值為2.5以下的第2蝕刻液,可使b*成為1.0以下。相對於此,當使用pH值超過2.5的蝕刻液的情況下,可確認到金屬配線間的透明基材的b*會超過1.0。 In addition, regarding b * of the transparent base material between metal wirings, it was confirmed that b * can be made 1.0 or less by using a second etching solution having a pH of 2.5 or less in the second etching step. In contrast, when an etching solution having a pH value of more than 2.5 was used, it was confirmed that b * of the transparent substrate between the metal wirings exceeded 1.0.

並且,若比較實驗例1-1~實驗例1-3與實驗例2-1~實驗例2-5,則可確認到通過使用由鹽酸及水構成的蝕刻液作為第2蝕刻液,能夠去除金屬配線間的殘渣。相對於此,當使用由硫酸及水構成的蝕刻液作為第2蝕刻液的情況下,可確認到無論pH值如何,均無法去除殘渣。 Furthermore, when comparing Experimental Example 1-1 to Experimental Example 1-3 with Experimental Example 2-1 to Experimental Example 2-5, it can be confirmed that the second etching solution can be removed by using an etching solution composed of hydrochloric acid and water. Residues in metal wiring closets. On the other hand, when an etching solution made of sulfuric acid and water was used as the second etching solution, it was confirmed that the residue could not be removed regardless of the pH value.

以上,以實施方式及實施例等說明了導電性基板、導電性基板的製造方法,但本發明並不限於上述實施形態及實施例等。在申請專利範圍記載的本發明要旨範圍內,可有各種變形、變更。 As mentioned above, although the conductive substrate and the manufacturing method of a conductive substrate were demonstrated by embodiment, an Example, etc., this invention is not limited to the said embodiment, Example, etc. Various modifications and changes can be made within the scope of the gist of the present invention described in the patent application scope.

本申請主張基於2016年4月18日向日本專利廳申請的特願2016-083180號的優先權,並將特願2016-083180號的全部內容援用至本國際申請。 This application claims priority based on Japanese Patent Application No. 2016-083180 filed with the Japan Patent Office on April 18, 2016, and refers to the entire contents of Japanese Patent Application No. 2016-083180 to this international application.

Claims (2)

一種導電性基板,其包括:透明基材,及形成於該透明基材的至少一個面上的金屬配線,該金屬配線具有銅配線層及黑化配線層疊層而成的構造,該黑化配線層包含鎳及銅,該金屬配線間露出的該透明基材的可見光透射率為90%以上,且b*為1.0以下。 A conductive substrate includes a transparent substrate, and a metal wiring formed on at least one surface of the transparent substrate. The metal wiring has a structure in which a copper wiring layer and a blackened wiring layer are laminated. The blackened wiring The layer contains nickel and copper, the visible light transmittance of the transparent substrate exposed between the metal wirings is 90% or more, and b * is 1.0 or less. 一種導電性基板的製造方法,其包括:蝕刻步驟:對具備透明基材及金屬疊層體的疊層體基板中的該金屬疊層體進行蝕刻,形成金屬配線,該金屬疊層體形成於該透明基材的至少一個面上,且具有銅層及黑化層疊層而成的構造,該黑化層包含鎳及銅,該蝕刻步驟依序具有:第1蝕刻步驟:使用包含從氯化鐵、過氧化氫水、硫酸、鹽酸中選擇的1種以上的第1蝕刻液進行蝕刻:水洗步驟:對該疊層體基板進行水洗,及第2蝕刻步驟:使用由鹽酸及水構成,且pH值為2.5以下的第2蝕刻液進行蝕刻。 A method for manufacturing a conductive substrate, comprising: an etching step: etching the metal laminate in a laminate substrate including a transparent substrate and a metal laminate to form a metal wiring, and the metal laminate is formed on At least one surface of the transparent substrate has a structure including a copper layer and a blackened layer. The blackened layer includes nickel and copper. The etching step includes: a first etching step: using Etching of one or more first etching solutions selected from iron, hydrogen peroxide water, sulfuric acid, and hydrochloric acid: a water washing step: washing the laminated substrate, and a second etching step: using hydrochloric acid and water, and The second etching solution having a pH of 2.5 or less is etched.
TW106112467A 2016-04-18 2017-04-14 Conductive substrate and manufacturing method of conductive substrate TWI728095B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP2016-083180 2016-04-18
JP2016083180 2016-04-18

Publications (2)

Publication Number Publication Date
TW201806754A true TW201806754A (en) 2018-03-01
TWI728095B TWI728095B (en) 2021-05-21

Family

ID=60115904

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106112467A TWI728095B (en) 2016-04-18 2017-04-14 Conductive substrate and manufacturing method of conductive substrate

Country Status (4)

Country Link
JP (1) JP7101113B2 (en)
CN (1) CN108700969B (en)
TW (1) TWI728095B (en)
WO (1) WO2017183489A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018221183A1 (en) * 2017-05-29 2018-12-06 住友金属鉱山株式会社 Method for manufacturing transparent electroconductive substrate, and transparent electroconductive substrate
CN113677085B (en) * 2020-05-13 2023-01-17 鹏鼎控股(深圳)股份有限公司 Transparent circuit board, transparent circuit board intermediate and transparent circuit board manufacturing method
KR20220098493A (en) * 2021-01-04 2022-07-12 동우 화인켐 주식회사 Mesh-patterned Touch Panel and Laminated Member therewith
WO2023127157A1 (en) * 2021-12-29 2023-07-06 シャープディスプレイテクノロジー株式会社 Touch panel and touch panel manufacturing method

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5517019B2 (en) * 2008-05-26 2014-06-11 住友金属鉱山株式会社 Printed wiring board and method for manufacturing printed wiring board
JP5224203B1 (en) * 2012-07-11 2013-07-03 大日本印刷株式会社 Touch panel sensor, touch panel device, and display device
KR101512236B1 (en) * 2012-08-31 2015-04-16 주식회사 엘지화학 Metal structure body and method for manufacturing the same
CN104603886B (en) * 2012-08-31 2016-12-07 Lg化学株式会社 Conductive structure and manufacture method thereof
CN104749830A (en) * 2013-12-27 2015-07-01 介面光电股份有限公司 Electrode structure and touch panel device with electrode structure
JP2015157392A (en) 2014-02-24 2015-09-03 パナソニックIpマネジメント株式会社 Laminate for see-through type electrode and production method for the same, see-through type electrode material and device
JP6905828B2 (en) * 2014-06-30 2021-07-21 住友金属鉱山株式会社 Conductive substrate, laminated conductive substrate, method for manufacturing conductive substrate, method for manufacturing laminated conductive substrate
US10026524B2 (en) * 2014-08-27 2018-07-17 Sumitomo Metal Mining Co., Ltd. Electrode substrate film and method of manufacturing the same
KR102304588B1 (en) 2014-10-03 2021-09-24 니폰 덴키 가라스 가부시키가이샤 Glass plate with film, touch sensor, film and method for producing glass plate with film

Also Published As

Publication number Publication date
JP7101113B2 (en) 2022-07-14
CN108700969A (en) 2018-10-23
TWI728095B (en) 2021-05-21
JPWO2017183489A1 (en) 2019-02-21
WO2017183489A1 (en) 2017-10-26
CN108700969B (en) 2022-04-08

Similar Documents

Publication Publication Date Title
TWI728095B (en) Conductive substrate and manufacturing method of conductive substrate
TWI785046B (en) Manufacturing method of transparent conductive substrate, transparent conductive substrate
JP2011060146A (en) Narrow frame touch input sheet and manufacturing method thereof
EP3651216B1 (en) Embedded electrode substrate for transparent light-emitting element display, and method for manufacturing same
JP6070675B2 (en) Method for producing transparent conductive substrate and touch panel sensor
JP2011129272A (en) Double-sided transparent conductive film sheet and method of manufacturing the same
JP2015156270A (en) Method of forming transparent electrode pattern
TWI791428B (en) Manufacturing method of blackening plating solution and conductive substrate
KR102443827B1 (en) Conductive substrate and liquid crystal touch panel
JP6500746B2 (en) Method of manufacturing conductive substrate
JP6597139B2 (en) Blackening plating solution, conductive substrate
TW201710564A (en) Blackening plating solution and conductive substrate
TWI791429B (en) Blackening plating solution and method of manufacturing conductive substrate
TWI716534B (en) Conductive substrate
TW201726401A (en) Laminated body substrate, electrically conductive substrate, method for producing laminated body substrate and method for producing electrically conductive substrate
TWI791427B (en) Blackening plating solution and method of manufacturing conductive substrate
JPWO2016068153A1 (en) Method for manufacturing conductive substrate