TW201743140A - Charged particle beam rendering device, charged particle beam rendering system, and rendering data generating method - Google Patents
Charged particle beam rendering device, charged particle beam rendering system, and rendering data generating method Download PDFInfo
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本揭示有關以多射束進行描繪之帶電粒子束描繪裝置、帶電粒子束描繪系統及描繪資料生成方法。 The present disclosure relates to a charged particle beam drawing device, a charged particle beam drawing system, and a drawing data generating method that are drawn by multiple beams.
半導體裝置的製造程序中,當對光罩或晶圓描繪微細圖樣時,會使用帶電粒子束描繪裝置。最近,為了進行高速描繪,同時照射複數道電子束,描繪複數個微細圖樣之多射束方式的帶電粒子束描繪裝置係受到矚目。 In the manufacturing process of a semiconductor device, when a fine pattern is drawn on a mask or a wafer, a charged particle beam drawing device is used. Recently, a charged particle beam drawing device of a multi-beam type in which a plurality of fine patterns are drawn in order to perform high-speed drawing and simultaneously irradiate a plurality of electron beams has been attracting attention.
帶電粒子束描繪裝置,是基於藉由布局設計工具等而生成的描繪資料(以下稱原描繪資料)來進行描繪。帶電粒子束描繪裝置,一般而言是將以GDS或OASIS等名稱為人所知之向量形式的原描繪資料,變換成逐線(raster)形式的描繪資料而暫且保存,然後基於保存好的逐線形式的描繪資料進行描繪(參照日本特表2012-527765號公報)。 The charged particle beam drawing device is drawn based on drawing data (hereinafter referred to as original drawing material) generated by a layout design tool or the like. The charged particle beam drawing device generally converts the original drawing data in the form of a vector known by the names of GDS or OASIS into a line-by-line drawing material and temporarily stores it, and then saves it based on the preservation. The drawing data in the form of a line is drawn (refer to Japanese Laid-Open Patent Publication No. 2012-527765).
帶電粒子束描繪裝置,是基於逐線形式的描繪資料,以像素(pixel)單位切換電子線射束的照射/非照射來進行描繪,但原描繪資料中包含的微細圖樣的尺寸,未必和像素間隔一致,此外,電子線射束的射束徑亦和像素寬幅不一致,因此於描繪前必須修正逐線形式的描繪資料。 The charged particle beam drawing device performs drawing based on the line-by-line drawing data, and switches the irradiation and non-irradiation of the electron beam in units of pixels. However, the size of the fine pattern included in the original drawing data does not necessarily correspond to the pixel. The interval is the same, and the beam diameter of the electron beam is also inconsistent with the pixel width. Therefore, it is necessary to correct the line-by-line drawing data before drawing.
然而,逐線形式的描繪資料,其資料量龐大,將逐線形式的描繪資料以像素單位予以修正後,若欲保存而管理該描繪資料,必須有大容量的記錄裝置,保存亦會耗費莫大的時間。 However, the data drawn on a line-by-line basis has a large amount of data. After the line-by-line drawing data is corrected in pixels, if you want to save and manage the drawing data, you must have a large-capacity recording device, and it will take a lot of time to save. time.
為了驗證修正處理後的描繪資料中是否有問題,有時亦會進行將描繪資料傳送至設計中心等之處理,但因逐線形式的描繪資料之資料量龐大,傳送亦會花費莫大的時間,其結果,會有無法迅速地進行修正處理後的描繪資料之驗證這樣的問題。 In order to verify whether there is a problem in the descriptive data after the correction process, the process of transferring the descriptive data to the design center may be performed. However, due to the large amount of data on the line-by-line format, the transmission will take a lot of time. As a result, there is a problem that the verification of the drawing data after the correction processing cannot be performed promptly.
本揭示係為了解決上述問題而研發,其目的在於提供一種使得管理修正處理後的描繪資料變得容易之帶電粒子束描繪裝置、帶電粒子束描繪系統及描繪資料生成方法。 The present invention has been made in order to solve the above problems, and an object of the invention is to provide a charged particle beam drawing device, a charged particle beam drawing system, and a drawing data generating method which facilitate drawing management data after management correction processing.
為解決上述問題,本揭示之一態樣中,提供一種帶電粒子束描繪裝置,具備:射束生成部生成帶電粒子束;及孔徑部,具有複數個開口部,使前述帶電粒子束通過該些開口部,以生成含有複數道微小射束之多射束;及 投影系統,將前述多射束縮小投影至描繪對象物;及遮沒部,介於前述孔徑部與前述投影系統之間,控制前述複數道微小射束朝向前述投影系統,或朝向和前述投影系統相異之方向;及控制部,控制前述射束生成部、前述投影系統及前述遮沒部;及取得部,取得用來對前述描繪對象物描繪之向量形式的第1描繪資料;及第1圖像變換部,將前述第1描繪資料變換成逐線(raster)形式的第2描繪資料;及圖像修正部,以像素單位修正前述第2描繪資料,生成逐線形式的第3描繪資料;及第2圖像變換部,將前述第3描繪資料變換成向量形式的第4描繪資料;及第1記憶控制部,進行將前述第4描繪資料保存於第1描繪資料記憶部之控制;前述控制部,基於前述第3描繪資料,控制前述射束生成部、前述投影系統及前述遮沒部,對前述描繪對象物將描繪圖樣予以描繪。 In order to solve the above problems, an aspect of the present disclosure provides a charged particle beam drawing device including: a beam generating unit generates a charged particle beam; and an aperture portion having a plurality of openings for passing the charged particle beam An opening to generate a multi-beam comprising a plurality of micro-beams; and a projection system that reduces and projects the multi-beam to a drawing object; and a masking portion that is interposed between the aperture portion and the projection system, and controls the plurality of microbeams toward the projection system, or toward the projection system And a control unit that controls the beam generating unit, the projection system, and the masking unit; and an acquisition unit that acquires a first drawing material in a vector form for drawing the object to be drawn; and the first The image conversion unit converts the first drawing material into a second drawing material in a raster form; and the image correcting unit corrects the second drawing material in units of pixels to generate a third drawing material on a line-by-line basis And the second image conversion unit converts the third drawing material into a fourth drawing data in a vector form; and the first memory control unit performs control for storing the fourth drawing data in the first drawing data storage unit; The control unit controls the beam generating unit, the projection system, and the masking unit based on the third drawing material, and draws a drawing pattern on the object to be drawn.
前述第2圖像變換部,亦可具有:二元化(binarization)部,生成將前述第3描繪資料予以二元化而成之二元資料;及輪廓抽出部,抽出前述二元資料的輪廓,生成前述第4描繪資料。 The second image conversion unit may include a binarization unit that generates binary data obtained by binarizing the third drawing material, and a contour extracting unit that extracts contours of the binary data. The fourth drawing material is generated.
亦可具備:檢查部,於對前述描繪對象物之描繪後,進行前述描繪對象物的描繪圖樣之外觀檢查,判斷是否有外觀上的問題;及第1記憶控制部,若藉由前述檢查部判斷出有問題,則將有問題之處周邊的前述第4描繪資料從前述第1描繪資料記憶部讀出;及比較手段,將藉由前述第1記憶控制部讀出的前述第4描繪資料和前述第1描繪資料比較;及修正問題判斷部,基於前述比較手段所做的比較結果,判斷前述第1圖像變換部將前述第1描繪資料變換成前述第2描繪資料之處理是否有問題。亦可以是,前述第3描繪資料,包含針對複數個像素各者之像素值,前述第2圖像變換部,具有:區域分割部,進行區域分割,該區域分割係將前述第3描繪資料內的具有同一像素值的鄰接之像素範圍統整成一個分割區域;及向量變換部,生成將前述區域分割而成的分割區域予以向量化而成之前述第4描繪資料。 The inspection unit may perform an appearance inspection of the drawing of the object to be drawn after the drawing of the object to be drawn, and determine whether there is a problem in appearance; and the first memory control unit is provided by the inspection unit. When it is determined that there is a problem, the fourth drawing material in the vicinity of the problem is read from the first drawing data storage unit, and the comparing means is to read the fourth drawing data read by the first memory control unit. The correction problem determination unit compares the result of the comparison by the comparison means, and determines whether the first image conversion unit converts the first drawing material into the second drawing data. . The third image data includes pixel values for each of the plurality of pixels, and the second image conversion unit includes an area dividing unit that performs area division, and the area division system includes the third drawing data. The adjacent pixel ranges having the same pixel value are integrated into one divided region; and the vector conversion unit generates the fourth drawing data obtained by vectorizing the divided regions obtained by dividing the region.
亦可以是,前述第3描繪資料,包含針對複數個像素各者之像素值,前述第2圖像變換部,具有:蓄積劑量分布取得部,基於前述第3描繪資料,進行將前述帶電粒子束的正向散射及背向散射納入考量之描繪 模擬,取得蓄積劑量分布;及蓄積劑量變換部,將前述蓄積劑量分布變換成向量資料;及頂點數刪減部,將藉由前述蓄積劑量變換部變換而成之向量資料的頂點數予以刪減,而生成前述第4描繪資料。 The third image data includes a pixel value for each of the plurality of pixels, and the second image conversion unit includes a stored dose distribution acquisition unit that performs the charged particle beam based on the third image data. Forward scattering and backscattering Simulating to obtain a stored dose distribution; and a stored dose converting unit that converts the accumulated dose distribution into vector data; and a vertex number deleting unit that cuts the number of vertices of the vector data converted by the accumulated dose converting unit And the fourth drawing material described above is generated.
亦可具備:檢查部,於對前述描繪對象物之描繪後,進行前述描繪對象物的描繪圖樣之外觀檢查,判斷是否有外觀上的問題;及第1記憶控制部,若藉由前述檢查部判斷出有問題,則將有問題之處周邊的前述第4描繪資料從前述第1描繪資料記憶部讀出;及比較手段,將藉由前述第1記憶控制部讀出的前述第4描繪資料和前述第1描繪資料比較;及修正問題判斷部,基於前述比較手段所做的比較結果,判斷修正前述第2描繪資料而生成前述第3描繪資料之前述圖像修正部所進行之處理是否有問題。 The inspection unit may perform an appearance inspection of the drawing of the object to be drawn after the drawing of the object to be drawn, and determine whether there is a problem in appearance; and the first memory control unit is provided by the inspection unit. When it is determined that there is a problem, the fourth drawing material in the vicinity of the problem is read from the first drawing data storage unit, and the comparing means is to read the fourth drawing data read by the first memory control unit. The correction problem determination unit compares the result of the comparison by the comparison means, and determines whether the processing performed by the image correction unit that generates the third drawing data by correcting the second drawing data is problem.
亦可具備:第3圖像變換部,將被保存於前述第1描繪資料記憶部之前述第4描繪資料變換成逐線形式的第5描繪資料,前述控制部,基於前述第5描繪資料,控制前述射束生成部、前述投影系統及前述遮沒部,對前述描繪對象物將描繪圖樣予以描繪。 The third image conversion unit may convert the fourth drawing material stored in the first drawing data storage unit into a fifth line-shaped drawing material on a line-by-line basis, and the control unit may use the fifth drawing data based on the fifth drawing data. The beam generating unit, the projection system, and the masking unit are controlled to draw a drawing pattern on the object to be drawn.
前述圖像修正部,亦可修正前述第2描繪資 料中包含之描繪圖樣的角部的像素的像素值而生成前述第3描繪資料。 The image correcting unit may correct the second drawing resource The third drawing material is generated by including the pixel value of the pixel of the corner of the drawing included in the material.
亦可以是,重疊於前述描繪圖樣之像素,相較於未重疊於前述描繪圖樣之像素,像素值被設定得較大,前述圖像修正部,將前述第2描繪資料中包含之描繪圖樣的角部的像素的像素值修正成更大的值,而生成前述第3描繪資料。 The pixels superimposed on the drawing pattern may have a larger pixel value than a pixel that is not superimposed on the drawing pattern, and the image correcting unit may display the drawing pattern included in the second drawing material. The pixel value of the pixel of the corner is corrected to a larger value, and the third drawing material is generated.
前述圖像修正部,亦可修正前述第2描繪資料中包含之描繪圖樣的交界線所位處的複數個像素的像素值而生成前述第3描繪資料。 The image correcting unit may correct the pixel value of the plurality of pixels located at the boundary line of the drawing pattern included in the second drawing material to generate the third drawing material.
亦可具備:第2記憶控制部,進行將前述第1描繪資料保存於第2描繪資料記憶部之控制。 The second memory control unit may be configured to store the first drawing data in the second drawing data storage unit.
本揭示之另一態樣中,提供一種帶電粒子束描繪系統,具備:射束生成部,生成帶電粒子束;及孔徑部,具有複數個開口部,使前述帶電粒子束通過該些開口部,以生成含有複數道微小射束之多射束;及投影系統,將前述多射束縮小投影至描繪對象物;及遮沒部,介於前述孔徑部與前述投影系統之間,控制前述複數道微小射束朝向前述投影系統,或朝向和前述投影系統相異之方向;及控制部,控制前述射束生成部、前述投影系統及前述遮沒部;及取得部,取得用來對前述描繪對象物描繪之向量形式 的第1描繪資料;及第1圖像變換部,將前述第1描繪資料變換成逐線(raster)形式的第2描繪資料;及圖像修正部,以像素單位修正前述第2描繪資料,生成逐線形式的第3描繪資料;及第2圖像變換部,將前述第3描繪資料變換成向量形式的第4描繪資料;及第1描繪資料記憶部,保存前述第4描繪資料;及檢查部,於對前述描繪對象物之描繪後,進行前述描繪對象物的描繪圖樣之外觀檢查,判斷是否有外觀上的問題;及修正問題判斷部,若藉由前述檢查部判斷出有問題,則判斷前述圖像修正部中的修正處理是否有問題。 According to another aspect of the present disclosure, a charged particle beam drawing system includes: a beam generating unit that generates a charged particle beam; and an aperture portion that has a plurality of openings that pass the charged particle beam through the openings Generating a plurality of beams including a plurality of microbeams; and a projection system for projecting and projecting the plurality of beams onto the object to be drawn; and a masking portion interposed between the aperture portion and the projection system to control the plurality of tracks The microbeam is directed toward the projection system or in a direction different from the projection system; and the control unit controls the beam generating unit, the projection system, and the masking unit; and the acquisition unit to obtain the object to be drawn Vector form of object depiction The first image data conversion unit converts the first image data into a second drawing data in a raster form, and the image correction unit corrects the second image data in units of pixels. Generating a third drawing data in a line-by-line format; and the second image converting unit converts the third drawing material into a fourth drawing data in a vector form; and the first drawing data storage unit stores the fourth drawing data; After the drawing of the object to be drawn, the inspection unit performs an appearance inspection of the drawing of the object to be drawn, and determines whether there is a problem in appearance; and the correction problem determination unit determines that there is a problem by the inspection unit. Then, it is judged whether or not there is a problem in the correction processing in the image correcting unit.
本揭示之另一態樣中,提供一種帶電粒子束描繪系統,具備:射束生成部,生成帶電粒子束;及孔徑部,具有複數個開口部,使前述帶電粒子束通過該些開口部,以生成含有複數道微小射束之多射束;及投影系統,將前述多射束縮小投影至描繪對象物;及遮沒部,介於前述孔徑部與前述投影系統之間,控制前述複數道微小射束朝向前述投影系統,或朝向和前述投影系統相異之方向;及控制部,控制前述射束生成部、前述投影系統及前述遮沒部;及取得部,取得用來對前述描繪對象物描繪之向量形式 的第1描繪資料;及第1圖像變換部,將前述第1描繪資料變換成逐線(raster)形式的第2描繪資料;及圖像修正部,對前述第2描繪資料以像素單位進行修正處理,生成逐線形式的第3描繪資料;及第2圖像變換部,將前述第3描繪資料變換成向量形式的第4描繪資料;及第1描繪資料記憶部,保存前述第4描繪資料;及控制部,基於前述第3描繪資料,控制前述射束生成部、前述投影系統及前述遮沒部,對前述描繪對象物將描繪圖樣予以描繪;及檢查部,於對前述描繪對象物之描繪後,進行前述描繪對象物的描繪圖樣之外觀檢查,判斷是否有外觀上的問題;及第1再生成部,若藉由前述檢查部判斷出有問題,則將前述第4描繪資料予以再生成;及第2再生成部,使用前述再生成之第4描繪資料,將逐線形式的前述第3描繪資料予以再生成;前述控制部,基於前述再生成之前述第3描繪資料,控制前述射束生成部、前述投影系統及前述遮沒部,對前述描繪對象物將描繪圖樣予以再描繪,前述第2圖像變換部,將前述再生成之第3描繪資料再變換成前述第4描繪資料,前述第1描繪資料記憶部,保存前述再變換而成之第 4描繪資料。 According to another aspect of the present disclosure, a charged particle beam drawing system includes: a beam generating unit that generates a charged particle beam; and an aperture portion that has a plurality of openings that pass the charged particle beam through the openings Generating a plurality of beams including a plurality of microbeams; and a projection system for projecting and projecting the plurality of beams onto the object to be drawn; and a masking portion interposed between the aperture portion and the projection system to control the plurality of tracks The microbeam is directed toward the projection system or in a direction different from the projection system; and the control unit controls the beam generating unit, the projection system, and the masking unit; and the acquisition unit to obtain the object to be drawn Vector form of object depiction And a first image conversion unit that converts the first drawing material into a second drawing material in a raster form; and an image correcting unit that performs the second drawing data in pixel units The correction processing generates a third drawing data in a line-by-line format; and the second image converting unit converts the third drawing material into a fourth drawing material in a vector form; and the first drawing data storage unit stores the fourth drawing And the control unit controls the beam generating unit, the projection system, and the masking unit based on the third drawing data, and draws a drawing pattern on the drawing object; and the inspection unit objects the object to be drawn After the drawing, the visual inspection of the drawing of the object to be drawn is performed to determine whether there is a problem in appearance; and when the first regenerating unit determines that there is a problem by the inspection unit, the fourth drawing material is given And generating, by the second regenerating unit, the third drawing material in a line-by-line format by using the fourth regenerated fourth drawing data; and the control unit is based on the regenerating In the third drawing data, the beam generating unit, the projection system, and the masking unit are controlled to re-render the drawing object, and the second image converting unit performs the third rendering of the re-generation. The data is further converted into the fourth drawing data, and the first drawing data storage unit stores the re-transformed 4 depict the information.
本揭示之一態樣中,提供一種描繪資料生成方法,係使用基於帶電粒子束而生成的含有複數道微小射束之多射束,來進行描繪對象物的描繪之帶電粒子束描繪裝置中所使用之描繪資料的生成方法,具備:取得用來對前述描繪對象物描繪之向量形式的第1描繪資料之步驟;及將前述第1描繪資料變換成逐線形式的第2描繪資料之步驟;及以像素單位修正前述第2描繪資料,生成逐線形式的第3描繪資料之步驟;及將前述第3描繪資料變換成向量形式的第4描繪資料之步驟;及將前述第4描繪資料保存於第1描繪資料記憶部之步驟。 In one aspect of the present disclosure, a method for generating a drawing data is provided in a charged particle beam drawing device that performs drawing of an object to be drawn using a multi-beam including a plurality of micro-beams generated by a charged particle beam. The method for generating a drawing data to be used includes a step of acquiring a first drawing material in a vector form for drawing the drawing object, and a step of converting the first drawing material into a second drawing material in a line-by-line format; And a step of correcting the second drawing data in units of pixels to generate a third drawing data on a line-by-line basis; and converting the third drawing material into a fourth drawing data in a vector form; and storing the fourth drawing data The first step of depicting the data storage unit.
亦可以是,前述變換成第4描繪資料之步驟,係將前述第3描繪資料予以二元化而生成二元化資料,抽出前述二元資料的輪廓,生成前述第4描繪資料。 The step of converting the third drawing data into the fourth drawing data may be to binarize the third drawing data to generate a binary data, and extract the outline of the binary data to generate the fourth drawing material.
亦可以是,於對前述描繪對象物之描繪後,進行前述描繪對象物的描繪圖樣之外觀檢查,判斷是否有外觀上的問題,若判斷出有前述問題,則將有問題之處周邊的前述第4描繪資料從前述第1描繪資料記憶部讀出, 將前述讀出的前述第4描繪資料和前述第1描繪資料比較,基於前述比較之結果,判斷將前述第1描繪資料變換成前述第2描繪資料之處理是否有問題。 After drawing the object to be drawn, the visual inspection of the drawing of the object to be drawn may be performed to determine whether there is a problem in appearance. If the above problem is determined, the above-mentioned problem may be present. The fourth drawing data is read from the first drawing data storage unit. The fourth drawing data read as described above is compared with the first drawing data, and based on the result of the comparison, it is determined whether or not there is a problem in the process of converting the first drawing material into the second drawing material.
亦可以是,前述第3描繪資料,包含針對複數個像素各者之像素值,前述變換成第4圖像之步驟,係進行區域分割,該區域分割係將前述第3描繪資料內的具有同一像素值的鄰接之像素範圍統整成一個分割區域,生成將前述被區域分割而成的分割區域予以向量化而成之前述第4描繪資料。 The third drawing data may include a pixel value for each of the plurality of pixels, and the step of converting the pixel image to the fourth image is to perform region division, wherein the region segmentation system has the same in the third drawing material. The pixel range adjacent to the pixel value is integrated into one divided region, and the fourth drawing material obtained by vectorizing the divided region divided by the region is generated.
亦可以是,前述第3描繪資料,包含針對複數個像素各者之像素值,基於前述第3描繪資料,進行將前述帶電粒子束的正向散射及背向散射納入考量之描繪模擬,取得蓄積劑量分布,將前述蓄積劑量分布變換成向量資料,將前述變換而成之向量資料的頂點數予以刪減,而生成前述第4描繪資料。 The third drawing data may include a pixel value for each of the plurality of pixels, and based on the third drawing data, perform a rendering simulation in which forward scattering and backscattering of the charged particle beam are taken into consideration to obtain an accumulation. The dose distribution converts the accumulated dose distribution into vector data, and subtracts the number of vertices of the transformed vector data to generate the fourth rendering material.
亦可以是,於對前述描繪對象物之描繪後,進行前述描繪對象物的描繪圖樣之外觀檢查,判斷是否有外觀上的問題,若判斷出有前述問題,則將有問題之處周邊的前述第 4描繪資料從前述第1描繪資料記憶部讀出,將前述讀出的前述第4描繪資料和前述第1描繪資料比較,基於前述比較之結果,判斷修正前述第2描繪資料而生成前述第3描繪資料之處理是否有問題。 After drawing the object to be drawn, the visual inspection of the drawing of the object to be drawn may be performed to determine whether there is a problem in appearance. If the above problem is determined, the above-mentioned problem may be present. First The drawing data is read from the first drawing data storage unit, and the read fourth drawing data is compared with the first drawing data, and based on the result of the comparison, it is determined that the second drawing material is corrected to generate the third item. Describe whether there is a problem with the processing of the data.
按照本揭示,會使管理修正處理後的描繪資料變得容易,能夠簡易且迅速地判斷從向量形式至逐線形式之資料變換或修正處理是否有問題。 According to the present disclosure, it is easy to manage the drawing data after the correction processing, and it is possible to easily and quickly determine whether there is a problem in the data conversion or the correction processing from the vector form to the line-by-line format.
1‧‧‧帶電粒子束描繪裝置 1‧‧‧Charged particle beam depicting device
2‧‧‧照明系統 2‧‧‧Lighting system
3‧‧‧多射束生成系統 3‧‧‧Multibeam generation system
4‧‧‧投影系統 4‧‧‧Projection system
5‧‧‧平台 5‧‧‧ platform
6a‧‧‧第1電磁透鏡 6a‧‧‧1st electromagnetic lens
6b‧‧‧第2電磁透鏡 6b‧‧‧2nd electromagnetic lens
6c‧‧‧第3電磁透鏡 6c‧‧‧3rd electromagnetic lens
7‧‧‧電子槍 7‧‧‧Electronic gun
8‧‧‧抽出系統 8‧‧‧Extraction system
9‧‧‧照明透鏡 9‧‧‧ illumination lens
9a‧‧‧遮沒偏向器 9a‧‧‧Without deflector
10‧‧‧孔徑構件 10‧‧‧Aperture member
11‧‧‧第1偏向器 11‧‧‧1st deflector
12‧‧‧第2偏向器 12‧‧‧2nd deflector
13‧‧‧描繪對象物 13‧‧‧Drawing objects
16‧‧‧孔徑板 16‧‧‧Aperture plate
17‧‧‧遮沒板 17‧‧‧ Covering board
18‧‧‧接地電極 18‧‧‧Ground electrode
19‧‧‧偏向電極 19‧‧‧ deflection electrode
40‧‧‧描繪圖樣 40‧‧‧Drawing a pattern
41‧‧‧控制部 41‧‧‧Control Department
42‧‧‧取得部 42‧‧‧Acquisition Department
43‧‧‧第1圖像變換部 43‧‧‧1st image conversion unit
44‧‧‧圖像修正部 44‧‧‧Image Correction Department
45‧‧‧第2圖像變換部 45‧‧‧2nd image conversion unit
47‧‧‧第1描繪資料記憶部 47‧‧‧1st depicting the data memory department
49‧‧‧第2描繪資料記憶部 49‧‧‧2nd depicting the data memory department
50‧‧‧檢查部 50‧‧‧Inspection Department
51‧‧‧修正問題判斷部 51‧‧‧Revised Problem Determination Department
52‧‧‧第3圖像變換部 52‧‧‧3rd image conversion unit
53‧‧‧第1再生成部 53‧‧‧1st Regeneration Department
54‧‧‧第2再生成部 54‧‧‧2nd Regeneration Department
[圖1]依一實施形態之帶電粒子束描繪裝置的概略構成示意圖。 Fig. 1 is a schematic view showing the configuration of a charged particle beam drawing device according to an embodiment.
[圖2]多射束生成系統的具體的構成一例示意圖。 FIG. 2 is a schematic diagram showing an example of a specific configuration of a multibeam generation system.
[圖3]從孔徑板的上方觀看形成於孔徑板與遮沒板之複數個開口部的俯視圖。 3] A plan view of a plurality of openings formed in the aperture plate and the mask plate as viewed from above the aperture plate.
[圖4]一實施形態之控制系統的具體的內部構成一例示意方塊圖。 Fig. 4 is a schematic block diagram showing an example of a specific internal configuration of a control system according to an embodiment.
[圖5A]圖4的圖像修正部所進行之修正處理的第1例說明圖。 FIG. 5A is an explanatory diagram of a first example of correction processing performed by the image correcting unit of FIG. 4. FIG.
[圖5B]圖4的圖像修正部所進行之修正處理的第1例說明圖。 FIG. 5B is an explanatory diagram of a first example of correction processing performed by the image correcting unit of FIG. 4. FIG.
[圖6]圖4的圖像修正部所進行之修正處理的第2例說明圖。 Fig. 6 is an explanatory diagram showing a second example of correction processing performed by the image correcting unit of Fig. 4;
[圖7]圖4的圖像修正部所進行之修正處理的第2例說明圖。 FIG. 7 is a second explanatory diagram of a correction process performed by the image correcting unit of FIG. 4. FIG.
[圖8]圖4的圖像修正部所進行之修正處理的第2例說明圖。 FIG. 8 is a second explanatory diagram of a correction process performed by the image correcting unit of FIG. 4. FIG.
[圖9]圖4的圖像修正部所進行之修正處理的第2例說明圖。 FIG. 9 is a second explanatory diagram of a correction process performed by the image correcting unit of FIG. 4. FIG.
[圖10]依一變形例之控制系統的具體的內部構成示意方塊圖。 Fig. 10 is a schematic block diagram showing a specific internal configuration of a control system according to a modification.
[圖11]包括圖像修正處理與錯誤因素辨明處理在內之控制系統的處理手續的第1例示意流程圖。 FIG. 11 is a schematic flow chart showing a first example of a processing procedure of a control system including image correction processing and error factor discrimination processing.
[圖12]控制系統的再描繪處理的一例示意流程圖。 FIG. 12 is a schematic flow chart showing an example of a re-rendering process of the control system.
[圖13A]第3描繪資料的一例示意圖。 FIG. 13A is a schematic diagram showing an example of the third drawing material.
[圖13B]將圖13A的第3描繪資料予以二元化之例示意圖。 FIG. 13B is a schematic diagram showing an example in which the third drawing material of FIG. 13A is binarized.
[圖14]基於圖13B的二元資料而抽出輪廓之例示意圖。 [Fig. 14] A schematic diagram showing an example of extracting a contour based on the binary data of Fig. 13B.
[圖15]使用以圖12的第1手法生成的第4描繪資料來進行圖11的步驟S9的處理之情形之詳細處理手續示意流程圖。 FIG. 15 is a flow chart showing the detailed processing procedure of the case where the processing of step S9 of FIG. 11 is performed using the fourth drawing data generated by the first method of FIG.
[圖16]圖15的處理之模型化示意圖。 [Fig. 16] Schematic diagram of the process of Fig. 15.
[圖17]藉由第2手法進行圖11的步驟S5之情形之處理手續示意流程圖。 FIG. 17 is a schematic flow chart showing the processing procedure of the case of performing step S5 of FIG. 11 by the second method.
[圖18A]第3描繪資料的一例示意圖。 FIG. 18A is a schematic diagram showing an example of the third drawing material.
[圖18B]將圖18A的第3描繪資料因應劑量而做區 域分割之例示意圖。 [Fig. 18B] The third drawing data of Fig. 18A is zoned in response to the dose. A schematic diagram of a domain segmentation.
[圖19]將圖18B的各分割區域變換成由多邊形化的向量資料所構成之第4描繪資料之例示意圖。 FIG. 19 is a schematic diagram showing an example in which each divided region of FIG. 18B is converted into a fourth drawing material composed of polygonized vector data.
[圖20]使用以圖17的第2手法生成的第4描繪資料來進行圖11的步驟S10的處理之情形之詳細處理手續示意流程圖。 FIG. 20 is a flow chart showing the detailed processing procedure of the case where the processing of step S10 of FIG. 11 is performed using the fourth drawing data generated by the second method of FIG.
[圖21A]圖20的處理之模型化說明圖。 FIG. 21A is a model explanatory diagram of the process of FIG. 20. FIG.
[圖21B]圖20的處理之模型化說明圖。 FIG. 21B is a model explanatory diagram of the process of FIG. 20. FIG.
[圖22]基於重做圖11的步驟S4的處理而生成之第3描繪資料,藉由圖20的處理而生成之第4描繪資料示意圖。 FIG. 22 is a fourth schematic view of the data generated by the process of FIG. 20 based on the third drawing data generated by the process of step S4 of FIG.
[圖23]藉由第3手法進行圖11的步驟S5之情形之處理手續示意流程圖。 FIG. 23 is a schematic flow chart showing the processing procedure of the case of performing step S5 of FIG. 11 by the third method.
[圖24A]第3描繪資料的一例示意圖。 FIG. 24A is a schematic diagram showing an example of the third drawing material.
[圖24B]使用圖24A的第3描繪資料進行描繪模擬而取得之蓄積劑量分布示意圖。 Fig. 24B is a schematic diagram showing the accumulation dose distribution obtained by performing the rendering simulation using the third drawing data of Fig. 24A.
[圖25A]圖23的步驟S62與S63的處理說明圖。 FIG. 25A is a process explanatory diagram of steps S62 and S63 of FIG. 23.
[圖25B]圖23的步驟S62與S63的處理說明圖。 FIG. 25B is a process explanatory diagram of steps S62 and S63 of FIG. 23.
[圖26]使用以圖23的第3手法生成的第4描繪資料來進行圖11的步驟S10的處理之情形之詳細處理手續示意流程圖。 FIG. 26 is a flow chart showing the detailed processing procedure of the case where the processing of step S10 of FIG. 11 is performed using the fourth drawing data generated by the third method of FIG.
[圖27]圖26的處理之模型化說明圖。 FIG. 27 is a model explanatory diagram of the process of FIG. 26. FIG.
[圖28]控制系統的再描繪處理的一例示意流程圖。 FIG. 28 is a schematic flow chart showing an example of the re-rendering process of the control system.
[圖29]進行圖28的處理之控制系統的內部構成示意 方塊圖。 29 is a schematic diagram showing the internal structure of a control system for performing the process of FIG. Block diagram.
[圖30]控制系統的處理手續的第2例示意流程圖。 FIG. 30 is a schematic flow chart showing a second example of the processing procedure of the control system.
[圖31]依第2例之控制系統方塊圖。 FIG. 31 is a block diagram of a control system according to a second example.
以下,針對本揭示之實施形態詳細說明。圖1為依一實施形態之帶電粒子束描繪裝置1的概略構成示意圖。圖1的帶電粒子束描繪裝置1,是基於對曝光用光罩或矽晶圓等描繪對象物形成微細圖樣之目的而被使用。 Hereinafter, embodiments of the present disclosure will be described in detail. Fig. 1 is a schematic view showing the schematic configuration of a charged particle beam drawing device 1 according to an embodiment. The charged particle beam drawing device 1 of Fig. 1 is used for the purpose of forming a fine pattern on an object to be drawn such as an exposure mask or a tantalum wafer.
圖1的帶電粒子束描繪裝置1,概分之,係具備照明系統2、多射束生成系統3、投影系統4、及控制系統35。 The charged particle beam drawing device 1 of Fig. 1 is mainly provided with an illumination system 2, a multibeam generation system 3, a projection system 4, and a control system 35.
照明系統2,具有電子槍(射束生成部)7、抽出系統8、偏向器9a、及照明透鏡9。電子槍7,放射電子束(電子線)。另,依本實施形態之帶電粒子束描繪裝置1用於描繪的帶電粒子,未必限定於電子束。例如,可為氫離子或重離子等各種離子的射束,亦可為帶電原子團簇或帶電分子的射束。此處,所謂重離子,係指比碳(C)還重的元素(例如氧、氮等)之離子。或是,所謂重離子,係指氖(Ne)、氬(Ar)、氪(Kr)、氙(Xe)等。以下,主要說明使用電子束作為帶電粒子束之例子。 The illumination system 2 includes an electron gun (beam generation unit) 7, an extraction system 8, a deflector 9a, and an illumination lens 9. Electron gun 7, emitting electron beam (electronic line). Further, the charged particles for drawing by the charged particle beam drawing device 1 according to the present embodiment are not necessarily limited to the electron beams. For example, it may be a beam of various ions such as hydrogen ions or heavy ions, or a beam of charged atomic clusters or charged molecules. Here, the heavy ion means an ion of an element (for example, oxygen, nitrogen, or the like) that is heavier than carbon (C). Alternatively, the heavy ion means neon (Ne), argon (Ar), krypton (Kr), xenon (Xe) or the like. Hereinafter, an example in which an electron beam is used as a charged particle beam will be mainly described.
偏向器9a,控制電子槍7所放射的電子束的行進方向1a。照明透鏡9,將電子束的行進方向排列整 齊。通過了照明透鏡9的電子束,會成為幅度寬而遠心(telecentric)的射束1b。 The deflector 9a controls the traveling direction 1a of the electron beam emitted from the electron gun 7. Illuminating lens 9, aligning the direction of travel of the electron beam Qi. The electron beam that has passed through the illumination lens 9 becomes a telecentric beam 1b that is wide and telecentric.
多射束生成系統3,如後詳述般,係從通過了照明透鏡9的電子束1b生成含有複數道微小射束之多射束1c。 The multibeam generation system 3 generates a multibeam 1c containing a plurality of microbeams from the electron beam 1b that has passed through the illumination lens 9, as will be described later in detail.
投影系統4,具有第1電磁透鏡6a、第1偏向器11、第2電磁透鏡6b、孔徑構件10、第3電磁透鏡6c、及第2偏向器12。入射至投影系統4的多射束1c,會依序通過第1電磁透鏡6a、第1偏向器11及第2電磁透鏡6b。其後,僅有通過了孔徑構件10的開口部之多射束依序通過了第3電磁透鏡6c及第2偏向器12後,照射至被載置於平台5上之描繪對象物13而進行描繪。投影系統4,使用第1~第3電磁透鏡6a~6c,將多射束縮小投影至描繪對象物13上。平台5,被做成可於其設置面的二維方向移動。故,一面使平台5移動,一面藉由投影系統4將多射束縮小投影至描繪對象物13上,藉此便能對描繪對象物13上的任意場所進行描繪。描繪對象物13,為曝光用光罩或矽晶圓等。 The projection system 4 includes a first electromagnetic lens 6a, a first deflector 11, a second electromagnetic lens 6b, an aperture member 10, a third electromagnetic lens 6c, and a second deflector 12. The multi-beam 1c incident on the projection system 4 sequentially passes through the first electromagnetic lens 6a, the first deflector 11, and the second electromagnetic lens 6b. Thereafter, only the plurality of beams that have passed through the opening of the aperture member 10 sequentially pass through the third electromagnetic lens 6c and the second deflector 12, and then are irradiated onto the object 13 to be placed on the stage 5 to perform the irradiation. Depiction. The projection system 4 uses the first to third electromagnetic lenses 6a to 6c to reduce and project the multi-beam onto the object 13 to be drawn. The platform 5 is made movable in a two-dimensional direction of its setting surface. Therefore, while the stage 5 is moved, the multi-beam is reduced and projected onto the object 13 by the projection system 4, whereby any place on the object 13 can be drawn. The object 13 to be drawn is an exposure mask or a wafer or the like.
除此之外,投影系統4,還進行將第1~第3電磁透鏡6a~6c及第1~第2偏向器11、12中的色像差及幾何性像差予以廣範圍地補償之光學性處理。 In addition, the projection system 4 also performs optical compensation for chromatic aberration and geometric aberration in the first to third electromagnetic lenses 6a to 6c and the first to second deflectors 11 and 12 in a wide range. Sexual treatment.
控制系統35,如後詳述般,係控制照明系統2、多射束生成系統3及投影系統4。除此之外,控制系統35,還進行描繪圖樣的外觀檢查、或後述修正處理之 控制等。 The control system 35 controls the illumination system 2, the multibeam generation system 3, and the projection system 4 as will be described in detail later. In addition to this, the control system 35 also performs an appearance inspection of the drawing pattern or a correction processing described later. Control, etc.
圖2為多射束生成系統3的具體的構成一例示意圖。圖2之多射束生成系統3,具有孔徑板(孔徑部)16、及遮沒板(遮沒部)17。 FIG. 2 is a schematic diagram showing an example of a specific configuration of the multibeam generation system 3. The multibeam generating system 3 of Fig. 2 has an aperture plate (aperture portion) 16 and a masking plate (covering portion) 17.
孔徑板16,具有保護板16免受電子束衝撞之保護層15、及使多射束放射之複數個開口部16a。保護層15非必要的構件,省略亦無妨。 The aperture plate 16 has a protective layer 15 for protecting the protective plate 16 from electron beam collision, and a plurality of openings 16a for radiating the plurality of beams. The protective layer 15 is not necessarily a member, and may be omitted.
遮沒板17,具有配合孔徑板16的各開口部16a而形成之複數個開口部17a。 The shielding plate 17 has a plurality of openings 17a formed to fit the respective opening portions 16a of the aperture plate 16.
圖3為從孔徑板16的上方觀看形成於孔徑板16與遮沒板17之複數個開口部16a、17a的俯視圖。圖3例子中,於孔徑板16的面方向的二維方向以一定間隔配置有複數個開口部16a。 3 is a plan view of a plurality of openings 16a and 17a formed in the aperture plate 16 and the mask 17 as viewed from above the aperture plate 16. In the example of Fig. 3, a plurality of openings 16a are arranged at regular intervals in the two-dimensional direction of the surface direction of the aperture plate 16.
如圖2所示,在遮沒板17的各開口部17a的鄰近,設有一組電極亦即接地電極18與偏向電極19。藉由使接地電極18、與相對應的偏向電極19通電,會使通過相對應的開口部16a、17a之電子束偏向,而如圖2的箭頭21所示,讓電子束不通過圖1的孔徑板10。另一方面,當不使接地電極18、與相對應的偏向電極19通電的情形下,電子束不會被偏向,而如圖2的箭頭20所示,會通過圖1的孔徑板10。通電,是藉由將和非導通狀態下的預設電壓足夠相異之電壓施加於接地電極18與偏向電極19之間來進行。不通電狀態下的預設電壓為0V,接地電極18與偏向電極19成為同電位。接地電極18與偏 向電極19之電壓控制,是藉由控制系統35來進行。 As shown in FIG. 2, a pair of electrodes, that is, a ground electrode 18 and a deflecting electrode 19 are provided adjacent to the opening portions 17a of the masking plate 17. By energizing the ground electrode 18 and the corresponding deflecting electrode 19, the electron beams passing through the corresponding opening portions 16a, 17a are deflected, and as shown by the arrow 21 in Fig. 2, the electron beam is not passed through the Aperture plate 10. On the other hand, when the ground electrode 18 is not energized with the corresponding deflecting electrode 19, the electron beam is not deflected, and as shown by the arrow 20 in Fig. 2, it passes through the aperture plate 10 of Fig. 1. The energization is performed by applying a voltage which is sufficiently different from the preset voltage in the non-conduction state between the ground electrode 18 and the deflection electrode 19. The preset voltage in the non-energized state is 0 V, and the ground electrode 18 and the deflecting electrode 19 have the same potential. Ground electrode 18 and partial The voltage control to the electrode 19 is performed by the control system 35.
像這樣,對於遮沒板17的各開口部17a各者,能夠控制是否使電子束偏向,因此能夠任意地控制通過圖1的孔徑板10之多射束的射束數及射束位置。 In this manner, it is possible to control whether or not the electron beams are deflected with respect to each of the openings 17a of the shielding plate 17, so that the number of beams and the beam position of the multi-beam passing through the aperture plate 10 of Fig. 1 can be arbitrarily controlled.
單射束方式之帶電粒子束描繪裝置1的情形下,只會對描繪對象物13上照射1道電子束,故可將該截面形狀加工成矩形等任意形狀,並在調節成任意強度的狀態下照射。是故,例如亦可達成於曝光對象面上一面掃描矩形的照射點一面描繪矩形狀的圖樣。因此,尺寸誤差不會發生,而能進行正確的圖樣形成,但無法期盼描繪速度的提升,因此會發生描繪時間耗費較久這樣的問題。 In the case of the charged beamlet drawing device 1 of the single beam type, only one electron beam is irradiated onto the object 13 to be drawn, so that the cross-sectional shape can be processed into an arbitrary shape such as a rectangle, and the state can be adjusted to an arbitrary intensity. Under irradiation. Therefore, for example, it is also possible to draw a rectangular pattern on the surface to be exposed on the surface of the scanning rectangle. Therefore, the dimensional error does not occur, and the correct pattern formation can be performed, but the improvement of the drawing speed cannot be expected, so that the drawing time takes a long time.
相對於此,多射束方式之帶電粒子束描繪裝置1的情形下,具有能夠使用多數道電子束進行極高速的描繪之優點,但卻難以個別地控制各個射束的截面形狀,或個別地控制各個射束的強度。更具體而言,無法設置將通過了微細的孔徑板16的開口部16a之各個電子束予以個別地成形、或個別地做強度調節之機構。 On the other hand, in the case of the multi-beam type charged particle beam drawing device 1, there is an advantage that extremely high-speed drawing can be performed using a plurality of electron beams, but it is difficult to individually control the cross-sectional shape of each beam, or individually. Control the intensity of each beam. More specifically, it is not possible to provide a mechanism for individually forming each of the electron beams passing through the opening portion 16a of the fine aperture plate 16 or individually adjusting the intensity.
依照當前利用的一般性的多射束方式之帶電粒子束描繪裝置1,雖能在曝光對象面上形成直徑的多數個圓形的照射點,但無法將照射點成形為任意形狀,不得不採用藉由各個電子束的ON/OFF控制來進行描繪之方法。鑑此,為了進行此多射束方式之帶電粒子束描繪裝置1的描繪控制,會利用藉由二維像素排列而構成之描繪資料。 The charged particle beam drawing device 1 according to the general multi-beam method currently used can form a diameter on the exposure target surface. Many of the circular irradiation points are not formed into an arbitrary shape, and a method of drawing by ON/OFF control of each electron beam has to be employed. In view of this, in order to perform the drawing control of the charged particle beam drawing device 1 of the multi-beam method, the drawing data constituted by the two-dimensional pixel arrangement is used.
此外,依照多射束方式之帶電粒子束描繪裝置1,無法個別地控制多數道電子束的強度。惟,藉由控制遮沒板17,便可將各個電子束予以個別地ON/OFF。鑑此,係採用下述方法,即,對於各個照射基準點各者,將分別照射之電子束予以個別地做ON/OFF控制,改變曝光時間,藉此改變曝光強度。這樣的曝光時間之控制,實際上是以曝光次數之控制這樣的形式來進行。這是由於實際上是一面使平台5二維地(圖1的左右方向及前後方向)移動,一面將多數道電子束於描繪對象物13上一面二維地掃描一面進行描繪之緣故。 Further, according to the charged particle beam drawing device 1 of the multi-beam method, the intensity of a majority of electron beams cannot be individually controlled. However, by controlling the masking plate 17, each of the electron beams can be individually turned ON/OFF. In view of this, the respective electron beams irradiated by the respective irradiation reference points are individually ON/OFF controlled, and the exposure time is changed, thereby changing the exposure intensity. The control of such exposure time is actually performed in the form of control of the number of exposures. This is because the platform 5 is actually two-dimensionally moved (the horizontal direction and the front-rear direction of FIG. 1), and a plurality of electron beams are scanned two-dimensionally on the object 13 to be drawn.
例如,若設計成將數奈秒左右的曝光時間事先訂定為1次電子束照射時的單位曝光時間,每當1次的電子束照射完成,便使平台5於X軸方向移動恰好間距d,再進行下一次的電子束照射,那麼對於特定的照射基準點Q而言,是藉由每次相異的電子束(鄰接之電子束)來進行單位曝光時間份的曝光。此時,若對各個電子束各者進行個別的ON/OFF控制,則雖為階段式,但可達成對各個照射基準點各者設定獨特的(particular)曝光強度。如後述般,藉由控制曝光強度,便可達成將描繪圖樣的形狀或圖樣寬幅予以微調整。 For example, if it is designed to set the exposure time of about several nanoseconds in advance as the unit exposure time at the time of one electron beam irradiation, the electron beam irradiation is completed once, and the stage 5 is moved in the X-axis direction just at the interval d. Then, the next electron beam irradiation is performed, and for a specific irradiation reference point Q, exposure by a unit exposure time is performed by each different electron beam (adjacent electron beam). At this time, if individual ON/OFF control is performed for each of the electron beams, the stage type is used, but it is possible to set a unique exposure intensity for each of the irradiation reference points. As will be described later, by controlling the exposure intensity, it is possible to finely adjust the shape or pattern width of the drawing pattern.
圖4為本實施形態之控制系統35的具體的內部構成一例示意方塊圖。圖4之控制系統35,具有控制部41、取得部42、第1圖像變換部43、圖像修正部44、第2圖像變換部45、第1記憶控制部46、第1描繪資料 記憶部47、第2記憶控制部48、及第2描繪資料記憶部49。圖4當中,取得部42、第1圖像變換部43、圖像修正部44、第2圖像變換部45、第1記憶控制部46及第2記憶控制部48,係設於帶電粒子束描繪裝置1的內部,而第1描繪資料記憶部47及第2描繪資料記憶部49則設於和帶電粒子束描繪裝置1分開的裝置(例如檢查裝置)內。本說明書中,將帶電粒子束描繪裝置1與檢查裝置合稱為帶電粒子束描繪系統。 Fig. 4 is a schematic block diagram showing an example of a specific internal configuration of the control system 35 of the embodiment. The control system 35 of FIG. 4 includes a control unit 41, an acquisition unit 42, a first image conversion unit 43, an image correction unit 44, a second image conversion unit 45, a first memory control unit 46, and a first drawing material. The memory unit 47, the second memory control unit 48, and the second picture data storage unit 49. In FIG. 4, the acquisition unit 42, the first image conversion unit 43, the image correction unit 44, the second image conversion unit 45, the first memory control unit 46, and the second memory control unit 48 are provided in the charged particle beam. The inside of the drawing device 1 is provided, and the first drawing data storage unit 47 and the second drawing data storage unit 49 are provided in a device (for example, an inspection device) separate from the charged particle beam drawing device 1. In the present specification, the charged particle beam drawing device 1 and the inspection device are collectively referred to as a charged particle beam drawing system.
控制部41,控制帶電粒子束描繪裝置1內的各部。控制部41,例如可由一台或複數台的電腦來構成,但實現控制部41之具體構成並不特別過問。控制部41,亦可包含後述取得部42、第1圖像變換部43、圖像修正部44及第2圖像變換部45的至少一部分功能。 The control unit 41 controls each unit in the charged particle beam drawing device 1. The control unit 41 can be configured by, for example, one or a plurality of computers, but the specific configuration of the control unit 41 is not particularly problematic. The control unit 41 may include at least a part of functions of the acquisition unit 42, the first image conversion unit 43, the image correction unit 44, and the second image conversion unit 45, which will be described later.
取得部42,取得用來對描繪對象物13描繪之向量形式的第1描繪資料。此處,所謂向量形式,意指藉由線段資訊與線的方向資訊來管理描繪資料。取得部42,經由網路、或是透過光碟等記錄媒介取得以未圖示的布局設計工具等生成之第1描繪資料。第1描繪資料,為GDS或OASIS等泛用的向量形式的描繪資料。 The acquisition unit 42 acquires the first drawing material in the vector form for drawing the object 13 to be drawn. Here, the so-called vector form means that the drawing data is managed by the line segment information and the direction information of the line. The acquisition unit 42 acquires the first drawing material generated by a layout design tool (not shown) or the like via a network or a recording medium such as a compact disc. The first drawing material is a drawing material of a general vector form such as GDS or OASIS.
第1圖像變換部43,將取得部42取得的第1描繪資料,變換成逐線形式的第2描繪資料。此處,所謂逐線形式,意指藉由像素單位的像素資料來管理描繪資料。 The first image converting unit 43 converts the first drawing material acquired by the obtaining unit 42 into a second drawing material on a line-by-line basis. Here, the line-by-line format means that the drawing material is managed by the pixel data of the pixel unit.
圖像修正部44,以像素單位修正第2描繪資 料以使第2描繪資料趨近理想的描繪資料,而生成逐線形式的第3描繪資料。圖像修正部44,維持逐線形式來進行修正處理的理由在於,其僅抽出第2描繪資料的圖樣圖像的特徵性之處來進行修正處理。 The image correcting unit 44 corrects the second drawing resource in units of pixels The third drawing material in a line-by-line format is generated by bringing the second drawing material closer to the ideal drawing data. The reason why the image correcting unit 44 performs the correction processing on the line-by-line basis is that only the characteristic of the pattern image of the second drawing material is extracted and the correction processing is performed.
第2圖像變換部45,將第3描繪資料變換成向量形式的第4描繪資料。第2圖像變換部45,將描繪資料從逐線形式變換成向量形式的理由在於,若維持逐線形式,則資料量會變龐大,不適合保存。 The second image converting unit 45 converts the third drawing material into the fourth drawing material in the vector form. The reason why the second image converting unit 45 converts the drawing material from the line-by-line format to the vector form is that if the line-by-line format is maintained, the amount of data becomes large and it is not suitable for storage.
第1描繪資料記憶部47,保存第2圖像變換部45進行了圖像變換而成之向量形式的第4描繪資料。第1記憶控制部46,進行將第4描繪資料保存於第1描繪資料記憶部47之控制。此外,第2描繪資料記憶部49,保存修正處理前的向量形式的第1描繪資料。第2記憶控制部48,進行將第1描繪資料保存於第2描繪資料記憶部49之控制。另,第2描繪資料記憶部49,非必要的構成部分,因此亦可省略。設置第2描繪資料記憶部49的優點為,當在對描繪對象物13描繪之圖樣的外觀檢查中有問題,亦即被判斷有錯誤時,能夠協助探究該問題的原因。也就是說,圖樣的外觀檢查中就造成錯誤之原因而言,可認為有從向量形式至逐線形式之資料變換、修正處理之問題(錯誤)、和資料變換及修正處理以外之問題(錯誤)。欲判斷是否為修正處理之問題,只要將修正處理前的第1描繪資料與修正處理後的第4描繪資料比較即可。故,若第2描繪資料記憶部49中存儲有修正處理前 的第1描繪資料,便能簡易且迅速地判斷是否為修正處理之錯誤。 The first drawing data storage unit 47 stores the fourth drawing material in the form of a vector obtained by the image conversion by the second image converting unit 45. The first memory control unit 46 performs control for storing the fourth drawing material in the first drawing data storage unit 47. Further, the second drawing data storage unit 49 stores the first drawing material in the vector form before the correction processing. The second memory control unit 48 performs control for storing the first drawing material in the second drawing data storage unit 49. Further, the second drawing data storage unit 49 may be omitted as long as it is an unnecessary component. The second drawing data storage unit 49 is advantageous in that it is possible to assist in exploring the cause of the problem when there is a problem in the visual inspection of the pattern drawn on the object 13 to be drawn, that is, when an error is determined. That is to say, in the visual inspection of the pattern, the cause of the error can be considered as a problem from the vector form to the line-by-line data conversion, correction processing (error), and data conversion and correction processing (error) ). In order to determine whether or not the correction processing is a problem, it is only necessary to compare the first drawing data before the correction processing with the fourth drawing data after the correction processing. Therefore, before the correction processing is stored in the second drawing data storage unit 49 The first depiction data can easily and quickly determine whether it is an error in the correction process.
圖5為圖4的圖像修正部44所進行之修正處理的第1例說明圖。描繪於描繪對象物13上之描繪圖樣40的角部40a,即使設計上的理想圖樣為具有陡峭角度的角部,於實際描繪時也會容易變成帶有圓弧的形狀。這是由於,電子束的射束形狀帶圓弧、及電子束的射束徑有可能比像素寬幅還大、及電子束在射束口徑的中心部亮度最高而隨著愈接近周緣則亮度漸變弱等。 FIG. 5 is a first explanatory diagram of a correction process performed by the image correcting unit 44 of FIG. 4. The corner portion 40a of the drawing pattern 40 drawn on the object 13 can be easily formed into a circular arc shape even when the actual drawing is a corner having a steep angle. This is because the beam shape of the electron beam has a circular arc, and the beam diameter of the electron beam may be larger than the width of the pixel, and the brightness of the electron beam is the highest in the center portion of the beam aperture, and the brightness is closer to the periphery. The gradient is weak and so on.
鑑此,修正處理的第1例中,是將和描繪圖樣40的角部40a相對應之像素的曝光強度更加提高,以進行抑制實際的圖樣形狀的圓弧之修正處理。 As a result, in the first example of the correction processing, the exposure intensity of the pixel corresponding to the corner portion 40a of the drawing pattern 40 is further improved, and the arc correction processing for suppressing the actual pattern shape is performed.
圖5係將描繪圖樣40的僅1個角部40a擴大圖示。圖5(a)揭示角部40a中的第1描繪資料、及角部40a中的第2描繪資料。第1描繪資料,為向量形式的描繪資料,包含描繪圖樣40的線方向資訊與線段長度資訊。第2描繪資料,包含構成描繪圖樣40之各像素的像素值資訊。此處,所謂像素,為描繪圖樣40內的單位區域,所謂像素值,為描繪圖樣40內的每單位區域的電子束的照射量亦即劑量。 FIG. 5 is an enlarged view showing only one corner portion 40a of the drawing 40. Fig. 5(a) shows the first drawing material in the corner portion 40a and the second drawing material in the corner portion 40a. The first drawing data is a drawing data in a vector form, and includes line direction information and line length information of the drawing pattern 40. The second drawing data includes pixel value information of each pixel constituting the drawing pattern 40. Here, the pixel is a unit area in the drawing pattern 40, and the pixel value is a dose which is an irradiation amount of an electron beam per unit area in the drawing pattern 40.
圖5例子中,描繪圖樣40的角部40a的二邊相夾之角度為90度,描繪圖樣40的交界線通過各像素的中央。在此情形下,第2描繪資料,將描繪圖樣40存在於像素內的全域之像素的像素值訂為15、描繪圖樣40存 在於像素內的僅一半之像素的像素值訂為7、描繪圖樣40的角部40a所存在之像素的像素值訂為4、描繪圖樣40不存在於像素內之像素的像素值訂為0。描繪圖樣40的角部40a所存在之像素,其描繪圖樣40係存在於像素內的1/4面積,因此其像素值為15×1/4=3.75,四捨五入成為4。 In the example of Fig. 5, the angle of the two sides of the corner portion 40a of the drawing pattern 40 is 90 degrees, and the boundary line of the drawing pattern 40 passes through the center of each pixel. In this case, in the second drawing data, the pixel value of the pixel of the entire region in which the pattern 40 exists in the pixel is set to 15, and the drawing pattern 40 is stored. The pixel value of only half of the pixels in the pixel is set to 7, the pixel value of the pixel in which the corner portion 40a of the drawing pattern 40 exists is set to 4, and the pixel value of the pixel in which the drawing pattern 40 is not present in the pixel is set to zero. The pixel in which the corner portion 40a of the pattern 40 exists is drawn, and the drawing pattern 40 is present in the area of 1/4 of the pixel. Therefore, the pixel value is 15 × 1/4 = 3.75, and the rounding is four.
圖5(b)揭示圖像修正部44所做的修正處理後的第3描繪資料。修正處理前,是將描繪圖樣40的角部40a所存在之像素的像素值訂為4,但藉由進行修正處理,將此像素的像素值變更成15。如此一來,將第3描繪資料做向量變換而成之第4描繪資料,會成為角部40a被擴大成矩形狀之描繪資料。第1描繪資料記憶部47,保存此第4描繪資料。第4描繪資料為向量形式,因此相較於保存逐線形式的第3描繪資料,能夠大幅地刪減保存的資料量。 FIG. 5(b) shows the third drawing material after the correction processing by the image correcting unit 44. Before the correction processing, the pixel value of the pixel in which the corner portion 40a of the drawing pattern 40 is present is set to 4, but the pixel value of the pixel is changed to 15 by performing the correction processing. In this way, the fourth drawing data obtained by vector-transforming the third drawing data becomes the drawing material in which the corner portion 40a is enlarged into a rectangular shape. The first drawing data storage unit 47 stores the fourth drawing material. Since the fourth drawing data is in the form of a vector, the amount of stored data can be significantly reduced as compared with the third drawing data in which the line-by-line format is saved.
如圖5(b)所示,若基於描繪圖樣40的角部40a被擴大成矩形狀之描繪資料來實際地進行描繪,則角部40a的圓弧會受到抑制,而趨近設計上的理想的描繪圖樣40。 As shown in FIG. 5(b), when the corner portion 40a of the drawing pattern 40 is actually drawn in a rectangular shape, the arc of the corner portion 40a is suppressed, and the design is ideal. Depicted pattern 40.
像這樣,圖像修正部44,係從描繪對象物13的描繪資料亦即逐線形式的第2描繪資料當中,檢測描繪圖樣40的角部40a,而修正角部40a的像素值。第2圖像變換部45,將修正後的第3描繪資料變換成向量形式的第4描繪資料,保存於第1描繪資料記憶部47。如此一 來,便能以較少的資料量來管理修正後的描繪資料,因此能夠刪減當將修正後的第4描繪資料傳送至設計中心等做驗證時之資料量,而變得易於進行第4描繪資料之驗證。 In this manner, the image correcting unit 44 detects the corner portion 40a of the drawing pattern 40 from the second drawing data on the line-by-line basis of the drawing material of the drawing object 13, and corrects the pixel value of the corner portion 40a. The second image converting unit 45 converts the corrected third drawing material into a fourth drawing material in a vector form, and stores it in the first drawing data storage unit 47. Such a In this way, it is possible to manage the corrected drawing data with a small amount of data, so that it is possible to delete the amount of data when the corrected fourth drawing data is transmitted to the design center for verification, and it becomes easy to carry out the fourth. Demonstrate the verification of the data.
另,圖像修正部44進行修正處理者,並不僅限定於描繪圖樣40的角部40a。例如,亦可針對描繪圖樣40的交界線也進行修正處理。 Further, the image correcting unit 44 performs the correction processing, and is not limited to the corner portion 40a of the drawing pattern 40. For example, correction processing may also be performed on the boundary line of the drawing pattern 40.
圖6~圖9為圖4的圖像修正部44所進行之修正處理的第2例說明圖。當1個像素為5nm的圖樣寬幅的情形下,針對能夠被5整除之圖樣寬幅的描繪圖樣40,描繪圖樣40的交界線會通過像素的交界位置。圖6揭示和5的倍數的圖樣寬幅(例如20nm)的描繪圖樣40相對應之第3描繪資料的例子。圖6中,將描繪圖樣40所存在之像素的像素值訂為15、描繪圖樣40不存在之像素的像素值訂為0。圖6例子中,描繪圖樣40的交界線和像素的交界位置一致。 6 to 9 are explanatory diagrams of a second example of the correction processing performed by the image correcting unit 44 of Fig. 4 . In the case where one pixel has a wide pattern of 5 nm, the boundary line of the drawing pattern 40 passes through the boundary position of the pixel with respect to the drawing pattern 40 which is widened by the pattern which is divisible by 5. Fig. 6 shows an example of the third drawing material corresponding to the drawing pattern 40 of the pattern width (e.g., 20 nm) of the multiple of 5. In FIG. 6, the pixel value of the pixel in which the pattern 40 exists is set to 15, and the pixel value of the pixel in which the drawing pattern 40 does not exist is set to zero. In the example of Fig. 6, the boundary between the boundary line of the drawing pattern 40 and the pixel is identical.
另一方面,針對無法被5整除之圖樣寬幅的描繪圖樣40,必須調整位於交界線之像素的像素值,將交界線從像素的交界位置挪移。圖7揭示欲描繪19nm的圖樣寬幅的描繪圖樣40,而將位於描繪圖樣40的交界線之像素的像素值訂為15之例子。 On the other hand, for the drawing pattern 40 in which the pattern cannot be divided by 5, it is necessary to adjust the pixel value of the pixel located on the boundary line and shift the boundary line from the boundary position of the pixel. FIG. 7 discloses an example in which a drawing pattern 40 of a 19 nm pattern is to be drawn, and a pixel value of a pixel located at a boundary line of the drawing pattern 40 is set to 15.
假設使用如圖7這樣的第3描繪資料進行了描繪時之圖樣寬幅為19.5nm。在此情形下,必須將圖樣寬幅再縮窄0.5nm份量,因此例如如圖8般,將位於描繪圖樣40的交界線之像素的像素值訂為更小的值亦即13。 此時的圖樣寬幅如圖8所示,假設為18.5nm,則例如如圖9般,將位於描繪圖樣40的交界線之像素的像素值,沿著交界線交互地反覆設為13與14。圖像修正部44,藉由反覆這樣的修正,來進行修正處理使成為最佳的圖樣寬幅。 It is assumed that the pattern width when drawing is performed using the third drawing material as shown in FIG. 7 is 19.5 nm. In this case, the pattern width must be further narrowed by 0.5 nm. Therefore, for example, as shown in FIG. 8, the pixel value of the pixel located at the boundary line of the drawing pattern 40 is set to a smaller value, that is, 13. The width of the pattern at this time is as shown in FIG. 8. If it is 18.5 nm, for example, as shown in FIG. 9, the pixel values of the pixels located at the boundary line of the drawing pattern 40 are alternately set to 13 and 14 along the boundary line. . The image correcting unit 44 performs the correction processing by repeating such correction so as to obtain an optimum pattern width.
圖9的情形下,沿著交界線之方向的像素值為13與14,將第3描繪資料變換而成之向量形式的第4描繪資料會成為折線形狀。即使交界線成為折線形狀,其凹凸差為0.5nm程度,實用上沒有問題。惟,第4描繪資料中,會變成包含折線的各交點座標、和折線的長度及方向,相較於具有直線狀的交界線之描繪圖樣40而言,資料量會增加。惟,相較於逐線形式的第3描繪資料而言,資料量仍少得多。 In the case of FIG. 9, the pixel values in the direction along the boundary line are 13 and 14, and the fourth drawing data in the vector form in which the third drawing material is converted becomes a polygonal line shape. Even if the boundary line has a polygonal line shape, the difference in unevenness is about 0.5 nm, and there is no problem in practical use. However, in the fourth drawing data, the coordinates of each intersection point including the polygonal line and the length and direction of the polygonal line are increased, and the amount of data is increased as compared with the drawing pattern 40 having the linear boundary line. However, the amount of data is still much less than that of the third line of data on a line-by-line basis.
作為驗證圖像修正部44進行了修正處理的第3描繪資料中是否有錯誤之手法,雖亦可考慮把將第3描繪資料做向量變換而成之第4描繪資料傳送至上述的設計中心等來進行驗證,但亦可藉由控制系統35來驗證有無錯誤。錯誤,是基於第3描繪資料對描繪對象物13實際進行描繪,而使用第4描繪資料進行該描繪圖樣40的外觀檢查來檢測。作為檢測出錯誤的因素,有問題在於圖像修正部44的修正處理之情形、及問題在於修正處理以外的處理之情形。故,當檢測出錯誤的情形下,必須辨明錯誤的因素。 As a method of correcting whether or not there is an error in the third drawing material subjected to the correction processing by the verification image correcting unit 44, it is also conceivable to transmit the fourth drawing data obtained by vector-converting the third drawing data to the design center or the like. Verification is performed, but the presence or absence of an error can also be verified by the control system 35. In the error, the drawing object 13 is actually drawn based on the third drawing data, and the visual inspection of the drawing pattern 40 is performed using the fourth drawing material. As a factor for detecting an error, there is a problem in the case of the correction processing by the image correcting unit 44 and the case where the processing is other than the correction processing. Therefore, when an error is detected, the factor of the error must be identified.
藉由控制系統35進行至錯誤因素的辨明處理 為止的情形下之方塊圖構成係成為圖10。圖10為對圖4追加了檢查部50及修正問題判斷部51而成者。檢查部50,進行描繪於描繪對象物13之描繪圖樣40的外觀檢查,判斷問題的原因是否在於圖像修正部44的修正處理。修正問題判斷部51,判斷圖像修正部44的修正處理是否有問題,若有問題,則再度對圖像修正部44指示修正處理。圖10當中,取得部42、第1圖像變換部43、圖像修正部44、第2圖像變換部45、第1描繪資料記憶部47、第2描繪資料記憶部49、檢查部50及修正問題判斷部51,係構成描繪資料驗證裝置。 Distinguishing the error factor by the control system 35 The block diagram configuration in the case of the above is shown in FIG. FIG. 10 is a view in which the inspection unit 50 and the correction problem determination unit 51 are added to FIG. 4. The inspection unit 50 performs an appearance inspection of the drawing pattern 40 drawn on the drawing object 13, and determines whether the cause of the problem lies in the correction processing by the image correcting unit 44. The correction problem determination unit 51 determines whether or not there is a problem in the correction processing by the image correction unit 44, and if there is a problem, instructs the image correction unit 44 to perform the correction processing again. In FIG. 10, the acquisition unit 42, the first image conversion unit 43, the image correction unit 44, the second image conversion unit 45, the first picture data storage unit 47, the second picture data storage unit 49, the inspection unit 50, and The correction problem determination unit 51 constitutes a drawing data verification device.
圖11為包括圖像修正處理與錯誤因素辨明處理在內之控制系統35的處理手續的第1例示意流程圖。 Fig. 11 is a schematic flow chart showing a first example of the processing procedure of the control system 35 including the image correction processing and the error factor discrimination processing.
首先,藉由取得部42,取得用來對描繪對象物13描繪之向量形式的第1描繪資料(步驟S1)。取得的第1描繪資料,被保存於第2描繪資料記憶部49(步驟S2)。此步驟S2之處理,係穿插於後述步驟S3~S6之處理進行。接著,藉由第1圖像變換部43,將第1描繪資料變換成逐線形式的第2描繪資料(步驟S3)。接著,藉由圖像修正部44進行第2描繪資料的修正處理,生成逐線形式的第3描繪資料(步驟S4)。接著,藉由第2圖像變換部45,將第3描繪資料變換成向量形式的第4描繪資料(步驟S5)。步驟S5之處理的細節後述。 First, the acquisition unit 42 acquires the first drawing material in the vector form for drawing on the object 13 to be drawn (step S1). The acquired first drawing data is stored in the second drawing data storage unit 49 (step S2). The processing of this step S2 is performed by the processing of steps S3 to S6 which will be described later. Next, the first image converting unit 43 converts the first drawing material into the second drawing material in a line-by-line format (step S3). Then, the image correcting unit 44 performs the correction processing of the second drawing material to generate the third drawing material in a line-by-line format (step S4). Next, the third image conversion unit 45 converts the third drawing material into the fourth drawing material in the vector form (step S5). The details of the processing of step S5 will be described later.
接著,第1記憶控制部46,進行將第4描繪資料保存於第1描繪資料記憶部47之控制(步驟S6)。 第1描繪資料記憶部47,例如設於與帶電粒子束描繪裝置1進行資訊通訊之未圖示之伺服器的內部。 Next, the first memory control unit 46 performs control for storing the fourth drawing material in the first drawing data storage unit 47 (step S6). The first drawing data storage unit 47 is provided, for example, in a server (not shown) that performs information communication with the charged particle beam drawing device 1.
接著,控制部41,基於第3描繪資料,對描繪對象物13進行描繪,形成描繪圖樣40(步驟S7)。上述步驟S1~S7之處理,是藉由帶電粒子束描繪裝置進行。後述步驟S8~S11之處理,是藉由檢查裝置進行。 Next, the control unit 41 draws the drawing object 13 based on the third drawing material to form the drawing pattern 40 (step S7). The processing of the above steps S1 to S7 is performed by a charged particle beam drawing device. The processing of steps S8 to S11 described later is performed by the inspection device.
步驟S8中,將形成的描繪圖樣40藉由未圖示之拍攝裝置拍攝,並分析拍攝的圖像,進行描繪圖樣40的外觀檢查。外觀檢查中,例如進行Die to Die檢查或Die to Database檢查。Die to Die檢查,為在形成有描繪圖樣40之描繪對象物13上,將同一種類的單元(cell)彼此比較之檢查。所謂單元,為構成描繪圖樣40的基本圖樣。一個描繪圖樣40,是將多數個單元組合而構成。雖可能存在形狀相異的複數種類的單元,但將各種類的單元以恰好任意的數量組合來構成描繪圖樣40。Die to Die檢查中,是將檢查對象單元的拍攝圖像,和同一形狀的另一單元的拍攝圖像比較,來進行外觀檢查。另一方面,Die to Database檢查,是將描繪圖樣40的拍攝圖像和第1描繪資料比較,來進行外觀檢查。比較所使用之第1描繪資料,亦可使用從第2描繪資料記憶部49讀出者。 In step S8, the formed drawing pattern 40 is imaged by an imaging device (not shown), and the captured image is analyzed to perform an appearance check of the drawing pattern 40. In the visual inspection, for example, Die to Die inspection or Die to Database inspection. The Die to Die inspection is a test in which the cells of the same type are compared with each other on the drawing object 13 on which the drawing pattern 40 is formed. The unit is a basic pattern that constitutes the drawing pattern 40. A drawing pattern 40 is constructed by combining a plurality of units. Although there may be a plurality of types of cells having different shapes, the various types of cells are combined in exactly any number to form the drawing pattern 40. In the Die to Die inspection, the captured image of the inspection target unit is compared with the captured image of another unit of the same shape to perform visual inspection. On the other hand, in the Die to Database check, the photographed image of the drawing pattern 40 is compared with the first drawing material to perform visual inspection. The first drawing data used for comparison can be used to read from the second drawing data storage unit 49.
接著,外觀檢查之結果,判斷描繪圖樣40是否有外觀上的問題(步驟S9)。若沒有外觀上的問題則結束圖11之處理,若有外觀上的問題,則將被保存於第1描繪資料記憶部47之第4描繪資料、和被保存於第2 描繪資料記憶部49之第1描繪資料比較,判斷以圖像修正部44進行之修正處理是否有問題(步驟S10)。步驟S10之處理的細節後述。如果判斷修正處理沒有問題,則認定問題在於修正處理以外,並執行事先訂定好的錯誤處理(步驟S11)。若步驟S10中判斷修正處理有問題,則回到步驟S4,重做第2描繪資料的修正處理。 Next, as a result of the visual inspection, it is determined whether or not the drawing pattern 40 has an appearance problem (step S9). If there is no problem in appearance, the processing of FIG. 11 is ended, and if there is a problem in appearance, the fourth drawing material stored in the first drawing data storage unit 47 is stored in the second The comparison of the first drawing data of the drawing data storage unit 49 determines whether or not there is a problem with the correction processing by the image correcting unit 44 (step S10). The details of the processing of step S10 will be described later. If it is judged that there is no problem in the correction processing, it is determined that the problem is other than the correction processing, and the error processing set in advance is executed (step S11). If it is determined in step S10 that there is a problem with the correction processing, the process returns to step S4, and the correction processing of the second drawing material is redone.
欲進行步驟S5之處理,可考慮幾種手法。以下,依序說明代表性的第1手法~第3手法。 To perform the processing of step S5, several methods can be considered. Hereinafter, the representative first method to third method will be described in order.
圖12為第1手法的處理手續示意流程圖。首先,將以圖11的步驟S4生成的第3描繪資料予以二元化(binarization)(二元化部,步驟S21)。圖13A為第3描繪資料的一例示意圖,圖13B為將圖13A的第3描繪資料予以二元化之例示意圖。圖13A的第3描繪資料,為最小值0,最大值15之像素單位的逐線資料。圖12的步驟S21中,適當設定閾值,將閾值以上的逐線資料設為1、未滿閾值的逐線資料設為0而予以二元化。閾值可設定任意的值,但圖13B揭示將閾值訂為5而二元化之例子。藉由此二元化,能夠將像素單位的資料以1位元來表現,因此能夠大幅地刪減資料量。 Fig. 12 is a flow chart showing the processing procedure of the first method. First, the third drawing material generated in step S4 of Fig. 11 is binarized (binary unit, step S21). Fig. 13A is a schematic diagram showing an example of the third drawing data, and Fig. 13B is a diagram showing an example of binarizing the third drawing material of Fig. 13A. The third drawing data of Fig. 13A is line-by-line data of a pixel unit of a minimum value of 0 and a maximum value of 15. In step S21 of FIG. 12, the threshold value is appropriately set, and the line-by-line data having the threshold value or more and the line-by-line data having the lower threshold value are set to 0 and binarized. The threshold value can be set to an arbitrary value, but FIG. 13B discloses an example in which the threshold value is set to 5 and is binarized. By this binarization, the data of the pixel unit can be expressed in one bit, so that the amount of data can be greatly reduced.
當進行步驟S21之處理時,亦可設置相異值的複數個閾值,依各閾值各者生成二元資料。二元資料,其資料量遠比原本的第3描繪資料還小,因此即使設置複數個二元資料,也不會有資料量極端增大之虞。 When the process of step S21 is performed, a plurality of threshold values of the different values may be set, and binary data is generated for each of the threshold values. Binary data, the amount of data is much smaller than the original third depiction data, so even if multiple binary data is set, there will be no extreme increase in data volume.
接著,基於二元化後的資料,抽出描繪圖樣 的輪廓,生成向量資料亦即第4描繪資料(輪廓抽出部,步驟S22)。生成的第4描繪資料,藉由圖11的步驟S6,被保存於第1描繪資料記憶部。 Then, based on the binarized data, extract the drawing pattern The contour is generated, that is, the fourth drawing data (the contour drawing unit, step S22). The generated fourth drawing data is stored in the first drawing data storage unit by step S6 of Fig. 11 .
圖14為基於圖13B的二元資料而抽出輪廓之例示意圖。輪廓沿著1與0的交界被抽出,生成含有輪廓資訊之向量資料。 Fig. 14 is a diagram showing an example of extracting a contour based on the binary data of Fig. 13B. The contour is extracted along the boundary between 1 and 0 to generate vector data containing contour information.
圖15為使用以圖12的第1手法生成的第4描繪資料來進行圖11的步驟S9的處理之情形之詳細處理手續示意流程圖。若圖11的步驟S9中判定描繪圖樣有問題,則將被判定有問題之處附近的第4描繪資料,自第1描繪資料記憶部讀出(步驟S31)。 Fig. 15 is a flow chart showing the detailed processing procedure of the case where the processing of step S9 of Fig. 11 is performed using the fourth drawing data generated by the first method of Fig. 12 . When it is determined in step S9 of FIG. 11 that there is a problem with the drawing pattern, the fourth drawing material near the point where the problem is determined is read from the first drawing data storage unit (step S31).
接著,將步驟S31中讀出的第4描繪資料和第1描繪資料比較(步驟S32)。比較之結果,判定是否發生了規定尺寸以上的資料不一致(步驟S33)。若步驟S33中檢測出不一致,則判定從第1描繪資料變換至第2描繪資料時發生了某種問題(步驟S34),而移往圖11的步驟S3。若步驟S33中未檢測出不一致,則進行圖11的步驟S11之錯誤處理。 Next, the fourth drawing material read in step S31 is compared with the first drawing material (step S32). As a result of the comparison, it is determined whether or not the data of the predetermined size or more has occurred (step S33). If the inconsistency is detected in step S33, it is determined that a certain problem has occurred when the first drawing material is converted to the second drawing material (step S34), and the process proceeds to step S3 of FIG. If the inconsistency is not detected in step S33, the error processing of step S11 of Fig. 11 is performed.
圖16為圖15的處理之模型化示意圖。圖16的實線為第4描繪資料,虛線為第1描繪資料,×為圖11的步驟S9中被判定出的問題處。圖15之處理,只要讀出描繪圖樣當中於圖11的步驟S9中被判定有問題之處附近的第4描繪資料,並和相對應之第1描繪資料比較即可,因此不需進行描繪圖樣全體的第4描繪資料和第1描繪資 料之比較,因此能夠高速地檢查問題處。 Figure 16 is a schematic illustration of the process of Figure 15. The solid line in Fig. 16 is the fourth drawing material, the broken line is the first drawing material, and × is the problem determined in step S9 of Fig. 11 . In the process of FIG. 15, the fourth drawing material in the vicinity of the position where the problem is determined in step S9 of FIG. 11 is read out and compared with the corresponding first drawing material, so that the drawing is not required. The fourth drawing information and the first drawing capital of the whole The comparison of the materials allows the problem to be checked at high speed.
如上述般,當將閾值相異的複數個第4描繪資料保存於第1描繪資料記憶部47的情形下,亦可將複數個第4描繪資料的各者和第1描繪資料比較來進行問題處之檢查。如此一來,便能更佳高精度地進行問題處之檢查。 As described above, when a plurality of fourth drawing data having different threshold values are stored in the first drawing data storage unit 47, each of the plurality of fourth drawing materials can be compared with the first drawing data to perform a problem. Check it out. In this way, the inspection of the problem can be performed with higher precision.
圖17為藉由第2手法進行圖11的步驟S5之情形之處理手續示意流程圖。首先,將以圖11的步驟S4生成的第3描繪資料依各像素值各者進行區域分割(區域分割部,步驟S41)。此處,所謂第3描繪資料的各像素值,係表示電子束的劑量。步驟S41中,將具有相同劑量的鄰接之像素範圍訂為一個分割區域。 Fig. 17 is a flow chart showing the procedure of the process of performing the step S5 of Fig. 11 by the second method. First, the third drawing data generated in step S4 of FIG. 11 is divided into regions according to each pixel value (area dividing unit, step S41). Here, each pixel value of the third drawing material indicates the dose of the electron beam. In step S41, the adjacent pixel range having the same dose is set as one divided area.
圖18A為第3描繪資料的一例示意圖,圖18B為將圖18A的第3描繪資料因應劑量而做區域分割之例示意圖。圖18B中,揭示設置劑量為「15」的1個分割區域、及劑量為「7」的3個分割區域、及劑量為「4」的1個分割區域之例子。 Fig. 18A is a schematic diagram showing an example of the third drawing data, and Fig. 18B is a schematic view showing an example of dividing the third drawing data of Fig. 18A by the dose. In Fig. 18B, an example in which one divided region in which the dose is "15", three divided regions in which the dose is "7", and one divided region in which the dose is "4" is disclosed.
接著,將藉由區域分割而得到的各分割區域內的第3描繪資料變換成向量資料亦即第4描繪資料(向量變換部,步驟S42)。圖19為將圖18B的各分割區域變換成由多邊形化的向量資料所構成之第4描繪資料之例示意圖。例如,分割區域d1,其劑量為「15」,因此被變換成包含「15」的值與多邊形資訊之第4描繪資料。生成的第4描繪資料,藉由圖11的步驟S6,被保存於第1 描繪資料記憶部47。 Next, the third drawing material in each divided area obtained by the area division is converted into the fourth drawing material which is the vector data (the vector converting unit, step S42). Fig. 19 is a view showing an example of converting the divided regions of Fig. 18B into fourth drawing data composed of polygonized vector data. For example, since the divided region d1 has a dose of "15", it is converted into a fourth drawing data including the value of "15" and the polygon information. The generated fourth drawing material is saved in the first step by step S6 of FIG. The data storage unit 47 is depicted.
圖20為使用以圖17的第2手法生成的第4描繪資料來進行圖11的步驟S10的處理之情形之詳細處理手續示意流程圖。若圖11的步驟S9中判定描繪圖樣有問題,則將被判定有問題之處附近的第4描繪資料,自第1描繪資料記憶部47讀出(步驟S51)。 FIG. 20 is a flow chart showing the detailed processing procedure of the case where the processing of step S10 of FIG. 11 is performed using the fourth drawing data generated by the second method of FIG. When it is determined that there is a problem in the drawing pattern in step S9 of FIG. 11, the fourth drawing material in the vicinity of the point where the problem is determined is read from the first drawing data storage unit 47 (step S51).
接著,將步驟S51中讀出的第4描繪資料和第1描繪資料比較(步驟S52)。比較之結果,判定圖11的步驟S4之修正處理所做的修正是否過度(步驟S53)。若判定修正過度,則導出藉由圖11的步驟S4從第2描繪資料變換成第3描繪資料時有問題之結論(修正問題判斷部,步驟S54),進行圖11的步驟S11之錯誤處理。若判定步驟S53中修正並未過度,則移往圖11的步驟S4。 Next, the fourth drawing material read in step S51 is compared with the first drawing material (step S52). As a result of the comparison, it is determined whether or not the correction by the correction processing of step S4 of Fig. 11 is excessive (step S53). When it is determined that the correction is excessive, the result of the problem of the conversion from the second drawing material to the third drawing material by the step S4 of FIG. 11 is derived (the correction problem determining unit, step S54), and the error processing of step S11 of FIG. 11 is performed. If it is determined in step S53 that the correction is not excessive, the process proceeds to step S4 of Fig. 11 .
圖21A及圖21B為圖20的處理之模型化說明圖。圖21的實線為第4描繪資料,虛線為第1描繪資料,×為圖11的步驟S9中被判定出的問題處。圖21A的問題處,為描繪圖樣的角部。圖21B的問題處,為描繪圖樣的端部。無論哪一情形,藉由再度重做圖11的步驟S4之修正處理,調整×附近的像素值,便能消弭問題。 21A and 21B are model explanatory views of the process of Fig. 20. The solid line in Fig. 21 is the fourth drawing material, the broken line is the first drawing material, and × is the problem determined in step S9 of Fig. 11 . The problem at Fig. 21A is to depict the corners of the pattern. The problem at Fig. 21B is to depict the end of the pattern. In either case, by re-doing the correction processing of step S4 of Fig. 11 and adjusting the pixel value in the vicinity of ×, the problem can be eliminated.
圖22為當發現了圖21A之問題時基於重做圖11的步驟S4的處理而生成之第3描繪資料,藉由圖20的處理而生成之第4描繪資料示意圖。將圖22的第4描繪資料和圖21A比較可知,描繪圖樣的角部之像素值受到 變更。如此一來,圖11的步驟S8及S9之外觀檢查中便會被判定為正常。 Fig. 22 is a view showing a fourth drawing material generated by the processing of Fig. 20 based on the third drawing data generated by the process of step S4 of Fig. 11 when the problem of Fig. 21A is found. Comparing the fourth drawing data of Fig. 22 with Fig. 21A, it can be seen that the pixel value of the corner portion of the drawing pattern is received. change. As a result, the visual inspection of steps S8 and S9 of FIG. 11 is judged to be normal.
圖20之處理,只要讀出於圖11的步驟S9中被判定有問題之處附近的第4描繪資料,並和相對應之第1描繪資料比較即可,因此不需進行描繪圖樣全體的第4描繪資料和第1描繪資料之比較,因此能夠高速地檢查問題處。 In the process of FIG. 20, the fourth drawing material in the vicinity of the point where the problem is determined in step S9 of FIG. 11 is read and compared with the corresponding first drawing material. Therefore, it is not necessary to perform the drawing of the entire pattern. 4 The comparison between the drawing data and the first drawing data enables the problem to be checked at a high speed.
圖23為藉由第3手法進行圖11的步驟S5之情形之處理手續示意流程圖。首先,使用以圖11的步驟S4生成的第3描繪資料,進行將電子束的正向散射或背向散射納入考量之描繪模擬,取得蓄積劑量分布(蓄積劑量分布取得部,步驟S61)。所謂正向散射,係指電子束不僅目標照射位置,還照射至目標照射位置的周圍之散射現象。所謂背向散射,係指電子束的一部分貫通阻劑膜而在基底之基板反射,而照射至目標照射位置的周圍之散射現象。步驟S61中,藉由進行將正向散射或背向散射納入考量之描繪模擬,來取得照射至目標照射位置的周圍之電子束的劑量分布而作為蓄積劑量分布。 Fig. 23 is a flow chart showing the procedure of the process of performing the step S5 of Fig. 11 by the third method. First, the third drawing data generated in step S4 of FIG. 11 is used to perform the drawing simulation in which the forward beam or the backscattering of the electron beam is taken into consideration, and the accumulated dose distribution (accumulated dose distribution acquiring unit is obtained, step S61). The term "forward scattering" refers to a scattering phenomenon in which the electron beam is irradiated not only to the target irradiation position but also to the periphery of the target irradiation position. The term "backscattering" refers to a scattering phenomenon in which a part of an electron beam penetrates a resist film and is reflected on a substrate of a substrate to be irradiated to a periphery of a target irradiation position. In step S61, by performing a drawing simulation in which forward scattering or backscattering is taken into consideration, the dose distribution of the electron beam irradiated to the periphery of the target irradiation position is obtained as the accumulated dose distribution.
圖24A為第3描繪資料的一例示意圖,圖24B為使用圖24A的第3描繪資料進行描繪模擬而取得之蓄積劑量分布示意圖。蓄積劑量分布,其特性為愈遠離目標照射位置,則劑量愈減少。 Fig. 24A is a schematic diagram showing an example of the third drawing data, and Fig. 24B is a schematic diagram showing the accumulated dose distribution obtained by performing the drawing simulation using the third drawing data of Fig. 24A. The accumulated dose distribution is characterized in that the farther away from the target irradiation position, the more the dose is reduced.
一旦以圖23的步驟S61取得蓄積劑量分布,接著,將蓄積劑量分布以任意閾值予以限制,而生成阻劑 圖樣像,並將此阻劑圖樣像變換成向量資料(蓄積劑量變換部,步驟S62)。接著,把將以步驟S62變換出的向量資料的頂點數予以減少而成之矩形資料保存於第1描繪資料記憶部而作為第4描繪資料(頂點數刪減部,步驟S63)。 Once the accumulated dose distribution is obtained in step S61 of FIG. 23, then the accumulated dose distribution is limited by an arbitrary threshold to generate a resist. The pattern image is converted into a vector data (accumulation dose conversion unit, step S62). Then, the rectangular data obtained by reducing the number of vertices of the vector data converted in step S62 is stored in the first drawing data storage unit as the fourth drawing material (the number of vertices deletion unit, step S63).
圖25A及圖25B為圖23的步驟S62與S63的處理說明圖。圖24B所示之蓄積劑量分布當中,例如僅抽出具有閾值為5以上的劑量之像素,則會得到如圖25A般的向量資料。此向量資料的輪廓線,如圖25A所示般為曲線,具有多數個頂點資料。故,圖23的步驟S63中,將圖25A般具有曲線的輪廓線之向量資料,變換成圖25B般具有直線狀的輪廓線之矩形資料。如此一來,便得到由將頂點數減少而成之向量資料所構成之第4描繪資料。 25A and 25B are explanatory views of the processing of steps S62 and S63 of Fig. 23. Among the accumulated dose distributions shown in Fig. 24B, for example, only pixels having a dose having a threshold of 5 or more are extracted, and vector data like Fig. 25A is obtained. The outline of this vector data is a curve as shown in Fig. 25A, and has a plurality of vertex data. Therefore, in step S63 of Fig. 23, the vector data of the contour line having the curve as shown in Fig. 25A is converted into the rectangular data having the straight contour line as shown in Fig. 25B. In this way, the fourth drawing data composed of the vector data obtained by reducing the number of vertices is obtained.
圖26為使用以圖23的第3手法生成的第4描繪資料來進行圖11的步驟S10的處理之情形之詳細處理手續示意流程圖。若圖11的步驟S9中判定描繪圖樣有問題,則將發現了問題之處附近的第4描繪資料,自第1描繪資料記憶部讀出(步驟S71)。 Fig. 26 is a flow chart showing the detailed processing procedure of the case where the processing of step S10 of Fig. 11 is performed using the fourth drawing data generated by the third method of Fig. 23 . When it is determined that there is a problem in the drawing pattern in step S9 of FIG. 11, the fourth drawing material in the vicinity of the problem is found, and is read from the first drawing data storage unit (step S71).
接著,將步驟S71中讀出的第4描繪資料和第1描繪資料比較(比較部,步驟S72)。比較之結果,判定圖11的步驟S4之修正處理所做的修正是否過度(修正問題判斷部,步驟S73)。若判定修正過度,則導出藉由圖11的步驟S4從第2描繪資料變換成第3描繪資料時有問題之結論(步驟S74),進行圖11的步驟S11之錯 誤處理。若判定步驟S73中修正並未過度,則移往圖11的步驟S4。 Next, the fourth drawing material read in step S71 and the first drawing material are compared (comparison unit, step S72). As a result of the comparison, it is determined whether or not the correction by the correction processing of step S4 of Fig. 11 is excessive (correction problem determination unit, step S73). If it is determined that the correction is excessive, the result of the problem of converting from the second drawing material to the third drawing material by the step S4 of FIG. 11 is derived (step S74), and the error of step S11 of FIG. 11 is performed. Mishandling. If it is determined in step S73 that the correction is not excessive, the process proceeds to step S4 of Fig. 11 .
圖27為圖26的處理之模型化說明圖。圖27的實線為第4描繪資料,虛線為第1描繪資料,×為圖11的步驟S9中被判定出的問題處。第3手法中,是考量電子束的正向散射或背向散射來生成第4描繪資料,因此能夠提升第4描繪資料的精度,能夠高精度地檢查描繪圖樣的問題處。 Fig. 27 is a model explanatory diagram of the processing of Fig. 26; The solid line in Fig. 27 is the fourth drawing material, the broken line is the first drawing material, and × is the problem determined in step S9 of Fig. 11 . In the third method, the fourth drawing data is generated by considering the forward scattering or backscattering of the electron beam. Therefore, the accuracy of the fourth drawing material can be improved, and the problem of drawing the pattern can be inspected with high precision.
第3描繪資料,一旦藉由圖11的步驟S7對描繪對象物將描繪圖樣予以描繪之處理結束後,便被刪除。惟,能夠使用被保存於第1描繪資料記憶部47之第4描繪資料,來對描繪對象物進行再描繪。再描繪,係當最初描繪的描繪對象物(例如光罩)於描繪後成為了不良之情形下、或當因顧客方的要求而委託製造複數個光罩之情形下會進行。需要再描繪之情形,例如為以下的1)、2)或3)這樣的情形。 The third drawing data is deleted when the drawing of the drawing object is completed by the step S7 of Fig. 11 . However, the fourth drawing material stored in the first drawing data storage unit 47 can be used to re-render the object to be drawn. Further, it is assumed that the first drawing object (for example, a photomask) is defective after the drawing, or when a plurality of masks are requested to be manufactured by the customer's request. The case where it is necessary to re-render is, for example, the case of 1), 2) or 3) below.
1)當製造光罩作為描繪對象物13的情形下,會對光罩用底板(blanks)塗布電子線感光性阻劑,以電子線進行圖樣之描繪,其後藉由顯影與蝕刻將基板加工來製作光罩。製作出的光罩,藉由圖11的步驟S8,進行描繪圖樣之外觀檢查。若藉由外觀檢查得知描繪圖樣未能加工成期望的形狀,則會備妥新的光罩用底板,再度進行描繪。 1) When a mask is produced as the object 13 to be drawn, an electron-line photosensitive resist is applied to the mask blanks, and the pattern is drawn by an electron beam, and then the substrate is processed by development and etching. To make a mask. The produced photomask is subjected to visual inspection of the drawing pattern by step S8 of Fig. 11 . If it is found by visual inspection that the drawing pattern has not been processed into a desired shape, a new base plate for the mask is prepared and the drawing is performed again.
2)對塗布於光罩用底板上的感光性阻劑以電 子線描繪圖樣後予以顯影,若顯影後的圖樣發現不良,則將阻劑剝離,於同一底板上再次塗布感光性阻劑,再度描繪。 2) Applying a photosensitive resist to the substrate for the photomask The sub-line is drawn and developed, and if the pattern after development is found to be defective, the resist is peeled off, and the photosensitive resist is applied again on the same substrate, and then drawn again.
3)製作出光罩並出貨後,當因顧客方的要求等而有必須再度製作具有相同描繪圖樣之光罩的情形下,會以同一描繪條件對新的光罩用底板塗布電子線感光性阻劑,再度進行描繪。 3) When a photomask is produced and shipped, when it is necessary to reproduce a photomask having the same pattern due to the request of the customer, the new photomask substrate is coated with the electron beam sensitivity under the same drawing conditions. The resist is redrawn.
另,再描繪時,有依照和以前完全相同的描繪圖樣來進行描繪之情形、及依照對以前的描繪圖樣施加了更正或修正的描繪圖樣來進行描繪之情形。 In addition, in the case of re-drawing, there are cases where the drawing is performed in accordance with the same drawing pattern as before, and the drawing is performed in accordance with the drawing pattern in which the correction or correction is applied to the previous drawing pattern.
圖28為控制系統35的再描繪處理之一例示意流程圖,圖29為進行圖28的處理之控制系統35的內部構成示意方塊圖。圖29為對圖10構成中追加了第3圖像變換部52而成者。第3圖像變換部52,將被保存於第1描繪資料記憶部47之第4描繪資料變換成逐線形式的第5描繪資料。控制部41,基於第5描繪資料,控制多射束生成系統3、孔徑構件10、投影系統4及偏向器9a等,對描繪對象物將描繪圖樣予以再描繪。 28 is a schematic flow chart showing an example of the re-rendering process of the control system 35, and FIG. 29 is a schematic block diagram showing the internal configuration of the control system 35 for performing the process of FIG. FIG. 29 is a view in which the third image conversion unit 52 is added to the configuration of FIG. The third image converting unit 52 converts the fourth drawing material stored in the first drawing data storage unit 47 into a fifth drawing material on a line-by-line basis. The control unit 41 controls the multi-beam generating system 3, the aperture member 10, the projection system 4, the deflector 9a, and the like based on the fifth rendering material, and re-renders the drawing of the drawing object.
圖28中,首先,讀出並取得被保存於第1描繪資料記憶部47之第4描繪資料(步驟S81)。接著,藉由第3圖像變換部52,將第4描繪資料變換成逐線形式的第5描繪資料(步驟S82)。接著,使用第5描繪資料,藉由控制部41對描繪對象物將描繪圖樣予以描繪(步驟S83)。 In FIG. 28, first, the fourth drawing material stored in the first drawing data storage unit 47 is read and acquired (step S81). Next, the third image converting unit 52 converts the fourth drawing material into the fifth drawing material in a line-by-line format (step S82). Next, using the fifth drawing material, the control unit 41 draws a drawing pattern on the drawing object (step S83).
圖30為控制系統35的處理手續之第2例示意流程圖,圖31為依第2例之控制系統35的方塊圖。第2例,為當判定出描繪圖樣有問題,且第2描繪資料之修正處理有問題的情形下,不重做第2描繪資料之修正處理,而是重新生成第4描繪資料。如圖31所示,依第2例之控制系統35,除圖10之構成外,還具有第1再生成部53、及第2再生成部54。第1再生成部53,若藉由修正問題判斷部51判斷出圖像修正部44之修正處理有問題,則將被保存於第1描繪資料記憶部47之第4描繪資料予以再生成。第2再生成部54,基於再生成之第4描繪資料,將逐線形式的第3描繪資料予以再生成。 Fig. 30 is a schematic flow chart showing a second example of the processing procedure of the control system 35, and Fig. 31 is a block diagram showing the control system 35 according to the second example. In the second example, when it is determined that there is a problem in the drawing pattern and there is a problem in the correction processing of the second drawing material, the fourth drawing data is newly reproduced without repeating the correction processing of the second drawing data. As shown in FIG. 31, the control system 35 according to the second example includes a first regenerating unit 53 and a second regenerating unit 54 in addition to the configuration of FIG. When the correction problem determination unit 51 determines that there is a problem with the correction processing by the image correction unit 44, the first reconstruction unit 53 regenerates the fourth drawing material stored in the first image data storage unit 47. The second regenerating unit 54 regenerates the third drawing material on a line-by-line basis based on the regenerated fourth drawing material.
圖30之步驟S91~S101和圖11之步驟S1~S11共通。步驟S100中若判定修正處理有問題,則讀出被保存於第1描繪資料記憶部47之第4描繪資料,藉由第1再生成部53進行再生成(步驟S102)。接著,基於再生成之第4描繪資料,藉由第2再生成部54將逐線形式的第3描繪資料予以再生成(步驟S103)。再生成的第3描繪資料,會被使用於描繪步驟S97的描繪圖樣,並且被用於步驟S95中變換成第4描繪資料。 Steps S91 to S101 of FIG. 30 are common to steps S1 to S11 of FIG. When it is determined that there is a problem in the correction processing in step S100, the fourth drawing material stored in the first drawing data storage unit 47 is read, and the first regenerating unit 53 regenerates it (step S102). Then, based on the regenerated fourth drawing data, the third re-generating unit 54 regenerates the third drawing material in a line-by-line format (step S103). The regenerated third drawing material is used to draw the drawing pattern of step S97, and is used to convert to the fourth drawing material in step S95.
圖30的步驟S102及S103中的第4描繪資料及第3描繪資料之再生成處理,例如依以下方式進行。從第1描繪資料記憶部47讀出第4描繪資料,變換成逐線形式的第5描繪資料,對此第5描繪資料再度進行修正處理以便消弭圖11的步驟S10中發現之問題,而重新生成 第3描繪資料。此外,將重新生成的第3描繪資料,變換成向量資料而重新生成第4描繪資料並保存於第1描繪資料記憶部47。 The re-generation processing of the fourth drawing material and the third drawing data in steps S102 and S103 of FIG. 30 is performed, for example, as follows. The fourth drawing material is read from the first drawing data storage unit 47, converted into a fifth drawing material on a line-by-line basis, and the fifth drawing data is subjected to correction processing again to eliminate the problem found in step S10 of FIG. generate The third drawing data. In addition, the third rendered data that has been regenerated is converted into vector data, and the fourth drawing material is regenerated and stored in the first drawing data storage unit 47.
像這樣,本實施形態中,將應描繪於描繪對象物13之向量形式的第1描繪資料,變換成逐線形式的第2描繪資料後,基於第2描繪資料,辨明描繪圖樣40的應進行修正之場所,並以像素單位進行修正處理,生成逐線形式的第3描繪資料。第3描繪資料,因資料量大,難以直接傳送至設計中心等來進行驗證。鑑此,本實施形態,是將第3描繪資料變換成向量形式的第4描繪資料,於減少了資料量之狀態下,記憶於第1描繪資料記憶部47。故,視必要能夠容易地進行從第1描繪資料記憶部47讀出第4描繪資料而驗證,能夠簡易且迅速地判斷修正處理是否確切。 In the present embodiment, the first drawing material to be drawn in the vector form of the drawing object 13 is converted into the second drawing material on the line-by-line basis, and then the drawing pattern 40 is determined based on the second drawing data. The corrected location is corrected in pixels, and the third depiction data is generated line by line. The third depiction data is difficult to directly transmit to the design center for verification because of the large amount of data. In the present embodiment, the fourth drawing material is converted into the fourth drawing data in the vector form, and is stored in the first drawing data storage unit 47 in a state where the amount of data is reduced. Therefore, it is possible to easily perform the verification by reading the fourth drawing material from the first drawing data storage unit 47 as necessary, and it is possible to easily and quickly determine whether or not the correction processing is accurate.
本揭示之態樣,並非限定於上述各個實施形態,還包含所屬技術領域者可思及之種種變形,本揭示之效果並非限定於上述內容。也就是說,在不脫離申請專利範圍所規範之內容及由其均等物推導出之本揭示的概念性思想與要旨之範圍內可做種種追加、變更及部分刪除。 The aspects of the present disclosure are not limited to the above-described respective embodiments, and various modifications may be made by those skilled in the art, and the effects of the present disclosure are not limited to the above. In other words, various additions, modifications, and partial deletions can be made without departing from the spirit and scope of the present disclosure.
35‧‧‧控制系統 35‧‧‧Control system
41‧‧‧控制部 41‧‧‧Control Department
42‧‧‧取得部 42‧‧‧Acquisition Department
43‧‧‧第1圖像變換部 43‧‧‧1st image conversion unit
44‧‧‧圖像修正部 44‧‧‧Image Correction Department
45‧‧‧第2圖像變換部 45‧‧‧2nd image conversion unit
46‧‧‧第1記憶控制部 46‧‧‧First Memory Control Department
47‧‧‧第1描繪資料記憶部 47‧‧‧1st depicting the data memory department
48‧‧‧第2記憶控制部 48‧‧‧Second Memory Control Department
49‧‧‧第2描繪資料記憶部 49‧‧‧2nd depicting the data memory department
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