TWI696897B - Charged particle beam drawing device, charged particle beam drawing system, and drawing data generation method - Google Patents
Charged particle beam drawing device, charged particle beam drawing system, and drawing data generation method Download PDFInfo
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使得管理修正處理後的描繪資料變得容易。 Makes it easy to manage the drawing data after correction processing.
帶電粒子束描繪裝置(1),具備:射束 生成部(7),生成帶電粒子束;及孔徑部(16),具有複數個開口部,使帶電粒子束通過該些開口部,以生成含有複數道微小射束之多射束;及投影系統(4),將多射束縮小投影至描繪對象物;及遮沒部(17),介於孔徑部與投影系統之間,控制複數道微小射束朝向投影系統,或朝向和投影系統相異之方向;及控制部(41),控制射束生成部、投影系統及遮沒部;及取得部(42),取得用來對描繪對象物描繪之向量形式的第1描繪資料;及第1圖像變換部(43),將第1描繪資料變換成逐線(raster)形式的第2描繪資料;及圖像修正部(44),以像素單位修正第2描繪資料,生成逐線形式的第3描繪資料;及第2圖像變換部(45),將第3描繪資料變換成向量形式的第4描繪資料;及第1記憶控制部(46),進行將第4描繪資料保存於第1描繪資料記憶部(47)之控制。 Charged particle beam drawing device (1), equipped with: beam The generating part (7) generates a charged particle beam; and the aperture part (16) has a plurality of openings through which the charged particle beam passes to generate a multi-beam containing a plurality of tiny beams; and a projection system (4), multi-beam reduced projection to the object to be drawn; and the occlusion part (17), between the aperture part and the projection system, to control a plurality of tiny beams toward the projection system, or the orientation is different from the projection system The direction; and the control section (41), which controls the beam generating section, the projection system, and the occlusion section; and the acquisition section (42), which obtains the first drawing data in the form of a vector for drawing the drawing object; and the first The image conversion unit (43) converts the first drawing data into the second drawing data in line-by-line (raster) form; and the image correction unit (44) corrects the second drawing data in pixel units to generate the line-by-line form The third drawing data; and the second image conversion unit (45), which converts the third drawing data into vector form of the fourth drawing data; and the first memory control unit (46), which stores the fourth drawing data in the 1 Describe the control of the data memory (47).
Description
本揭示有關以多射束進行描繪之帶電粒子束描繪裝置、帶電粒子束描繪系統及描繪資料生成方法。 The present disclosure relates to a charged particle beam drawing device, a charged particle beam drawing system, and a drawing data generation method for drawing with multiple beams.
半導體裝置的製造程序中,當對光罩或晶圓描繪微細圖樣時,會使用帶電粒子束描繪裝置。最近,為了進行高速描繪,同時照射複數道電子束,描繪複數個微細圖樣之多射束方式的帶電粒子束描繪裝置係受到矚目。 In the manufacturing process of a semiconductor device, when a fine pattern is drawn on a photomask or a wafer, a charged particle beam drawing device is used. Recently, in order to perform high-speed drawing, a plurality of electron beams are simultaneously irradiated, and a multi-beam type charged particle beam drawing device for drawing a plurality of fine patterns has attracted attention.
帶電粒子束描繪裝置,是基於藉由布局設計工具等而生成的描繪資料(以下稱原描繪資料)來進行描繪。帶電粒子束描繪裝置,一般而言是將以GDS或OASIS等名稱為人所知之向量形式的原描繪資料,變換成逐線(raster)形式的描繪資料而暫且保存,然後基於保存好的逐線形式的描繪資料進行描繪(參照日本特表2012-527765號公報)。 The charged particle beam drawing device draws based on drawing data (hereinafter referred to as original drawing data) generated by a layout design tool or the like. The charged particle beam drawing device generally converts the original drawing data in the vector form known by the name of GDS or OASIS into a raster form of drawing data and temporarily saves it, and then based on the saved The drawing data in line format is drawn (refer to Japanese Patent Publication No. 2012-527765).
帶電粒子束描繪裝置,是基於逐線形式的描繪資料,以像素(pixel)單位切換電子線射束的照射/非照射來進行描繪,但原描繪資料中包含的微細圖樣的尺寸,未必和像素間隔一致,此外,電子線射束的射束徑亦和像素寬幅不一致,因此於描繪前必須修正逐線形式的描繪資料。 The charged particle beam drawing device is based on line-by-line drawing data, and the irradiation/non-irradiation of the electron beam is switched in pixel units to perform drawing. However, the size of the fine patterns included in the original drawing data may not be the same as the pixels. The interval is consistent. In addition, the beam diameter of the electron beam is also inconsistent with the width of the pixel. Therefore, the drawing data must be corrected line by line before drawing.
然而,逐線形式的描繪資料,其資料量龐大,將逐線形式的描繪資料以像素單位予以修正後,若欲保存而管理該描繪資料,必須有大容量的記錄裝置,保存亦會耗費莫大的時間。 However, the line-by-line form of drawing data has a huge amount of data. After the line-by-line form of drawing data is corrected in pixel units, if you want to save and manage the drawing data, you must have a large-capacity recording device, and it will be expensive to save. time.
為了驗證修正處理後的描繪資料中是否有問題,有時亦會進行將描繪資料傳送至設計中心等之處理,但因逐線形式的描繪資料之資料量龐大,傳送亦會花費莫大的時間,其結果,會有無法迅速地進行修正處理後的描繪資料之驗證這樣的問題。 In order to verify whether there is a problem with the drawing data after correction processing, sometimes processing is performed to transfer the drawing data to the design center, etc. However, due to the large amount of drawing data in the line-by-line format, the transmission will also take a lot of time. As a result, there is a problem that the verification of the drawing data after correction processing cannot be performed quickly.
本揭示係為了解決上述問題而研發,其目的在於提供一種使得管理修正處理後的描繪資料變得容易之帶電粒子束描繪裝置、帶電粒子束描繪系統及描繪資料生成方法。 The present disclosure was developed to solve the above-mentioned problems, and its object is to provide a charged particle beam drawing device, a charged particle beam drawing system, and a drawing data generation method that make it easier to manage the drawing data after correction processing.
為解決上述問題,本揭示之一態樣中,提供一種帶電粒子束描繪裝置,具備:射束生成部生成帶電粒子束;及孔徑部,具有複數個開口部,使前述帶電粒子束通過該些開口部,以生成含有複數道微小射束之多射束;及 投影系統,將前述多射束縮小投影至描繪對象物;及遮沒部,介於前述孔徑部與前述投影系統之間,控制前述複數道微小射束朝向前述投影系統,或朝向和前述投影系統相異之方向;及控制部,控制前述射束生成部、前述投影系統及前述遮沒部;及取得部,取得用來對前述描繪對象物描繪之向量形式的第1描繪資料;及第1圖像變換部,將前述第1描繪資料變換成逐線(raster)形式的第2描繪資料;及圖像修正部,以像素單位修正前述第2描繪資料,生成逐線形式的第3描繪資料;及第2圖像變換部,將前述第3描繪資料變換成向量形式的第4描繪資料;及第1記憶控制部,進行將前述第4描繪資料保存於第1描繪資料記憶部之控制;前述控制部,基於前述第3描繪資料,控制前述射束生成部、前述投影系統及前述遮沒部,對前述描繪對象物將描繪圖樣予以描繪。 In order to solve the above-mentioned problems, in one aspect of the present disclosure, a charged particle beam drawing device is provided, comprising: a beam generating section generating a charged particle beam; and an aperture section having a plurality of openings to pass the aforementioned charged particle beam through these Openings to generate multiple beams containing multiple tiny beams; and A projection system, which projects the multi-beam down to the object to be drawn; and an obscuration section, interposed between the aperture section and the projection system, and controls the plurality of tiny beams toward the projection system, or to the projection system Different directions; and a control unit, which controls the beam generating unit, the projection system, and the occlusion unit; and an acquisition unit, which obtains the first drawing data in the form of a vector for drawing the drawing object; and the first An image conversion unit that converts the first drawing data into a second drawing data in a line-by-line format; and an image correction unit that corrects the second drawing data in a pixel unit to generate a third drawing data in a line-by-line format ; And a second image conversion unit, which converts the third drawing data into a fourth drawing data in a vector format; and a first memory control unit, which performs control to save the fourth drawing data in the first drawing data storage unit; The control unit controls the beam generating unit, the projection system, and the masking unit based on the third drawing data, and draws a drawing pattern on the drawing object.
前述第2圖像變換部,亦可具有:二元化(binarization)部,生成將前述第3描繪資料予以二元化而成之二元資料;及輪廓抽出部,抽出前述二元資料的輪廓,生成前述第4描繪資料。 The second image conversion unit may further include: a binarization unit that generates binary data obtained by binarizing the third drawing data; and an outline extraction unit that extracts the outline of the binary data To generate the fourth drawing data.
亦可具備:檢查部,於對前述描繪對象物之描繪後,進行前述描繪對象物的描繪圖樣之外觀檢查,判斷是否有外觀上的問題;及第1記憶控制部,若藉由前述檢查部判斷出有問題,則將有問題之處周邊的前述第4描繪資料從前述第1描繪資料記憶部讀出;及比較手段,將藉由前述第1記憶控制部讀出的前述第4描繪資料和前述第1描繪資料比較;及修正問題判斷部,基於前述比較手段所做的比較結果,判斷前述第1圖像變換部將前述第1描繪資料變換成前述第2描繪資料之處理是否有問題。亦可以是,前述第3描繪資料,包含針對複數個像素各者之像素值,前述第2圖像變換部,具有:區域分割部,進行區域分割,該區域分割係將前述第3描繪資料內的具有同一像素值的鄰接之像素範圍統整成一個分割區域;及向量變換部,生成將前述區域分割而成的分割區域予以向量化而成之前述第4描繪資料。 It may be further provided with: an inspection section that performs an appearance inspection of the drawing pattern of the drawing object after drawing the drawing object to determine whether there is a problem with the appearance; and a first memory control section that uses the checking section If it is determined that there is a problem, the fourth drawing data around the problematic area is read from the first drawing data storage unit; and the comparison means is to read the fourth drawing data read by the first memory control unit Compared with the first drawing data; and the correction problem determination unit, based on the comparison result by the comparison means, determines whether the processing of the first image conversion unit converting the first drawing data into the second drawing data is problematic . Alternatively, the third drawing data may include pixel values for each of the plurality of pixels. The second image conversion unit may include an area division unit that performs area division. The area division includes the third drawing data. The adjacent pixel ranges having the same pixel value are integrated into one divided region; and the vector conversion unit generates the fourth drawing data obtained by vectorizing the divided regions obtained by dividing the aforementioned regions.
亦可以是,前述第3描繪資料,包含針對複數個像素各者之像素值,前述第2圖像變換部,具有:蓄積劑量分布取得部,基於前述第3描繪資料,進行將前述帶電粒子束的正向散射及背向散射納入考量之描繪 模擬,取得蓄積劑量分布;及蓄積劑量變換部,將前述蓄積劑量分布變換成向量資料;及頂點數刪減部,將藉由前述蓄積劑量變換部變換而成之向量資料的頂點數予以刪減,而生成前述第4描繪資料。 The third rendering data may include pixel values for each of the plurality of pixels, and the second image conversion unit may include an accumulated dose distribution obtaining unit that performs the charging of the charged particle beam based on the third rendering data. Of the forward scatter and backscatter taken into account Simulate to obtain the accumulated dose distribution; and the accumulated dose conversion section to convert the aforementioned accumulated dose distribution into vector data; and the vertex number reduction section to reduce the number of vertices of the vector data transformed by the aforementioned accumulated dose conversion section To generate the fourth drawing data.
亦可具備:檢查部,於對前述描繪對象物之描繪後,進行前述描繪對象物的描繪圖樣之外觀檢查,判斷是否有外觀上的問題;及第1記憶控制部,若藉由前述檢查部判斷出有問題,則將有問題之處周邊的前述第4描繪資料從前述第1描繪資料記憶部讀出;及比較手段,將藉由前述第1記憶控制部讀出的前述第4描繪資料和前述第1描繪資料比較;及修正問題判斷部,基於前述比較手段所做的比較結果,判斷修正前述第2描繪資料而生成前述第3描繪資料之前述圖像修正部所進行之處理是否有問題。 It may be further provided with: an inspection section that performs an appearance inspection of the drawing pattern of the drawing object after drawing the drawing object to determine whether there is a problem with the appearance; and a first memory control section that uses the checking section If it is determined that there is a problem, the fourth drawing data around the problematic area is read from the first drawing data storage unit; and the comparison means is to read the fourth drawing data read by the first memory control unit Compared with the first drawing data; and the correction problem determination unit, based on the comparison result by the comparison means, determines whether the processing performed by the image correction unit that generates the third drawing data by modifying the second drawing data is problem.
亦可具備:第3圖像變換部,將被保存於前述第1描繪資料記憶部之前述第4描繪資料變換成逐線形式的第5描繪資料,前述控制部,基於前述第5描繪資料,控制前述射束生成部、前述投影系統及前述遮沒部,對前述描繪對象物將描繪圖樣予以描繪。 It may further include: a third image conversion unit that converts the fourth drawing data stored in the first drawing data storage unit into fifth drawing data in a line-by-line format, and the control unit based on the fifth drawing data, The beam generating unit, the projection system, and the masking unit are controlled to draw a drawing pattern on the drawing object.
前述圖像修正部,亦可修正前述第2描繪資 料中包含之描繪圖樣的角部的像素的像素值而生成前述第3描繪資料。 The image correction unit can also correct the second drawing data The pixel values of the pixels in the corners of the drawing included in the material are used to generate the third drawing data.
亦可以是,重疊於前述描繪圖樣之像素,相較於未重疊於前述描繪圖樣之像素,像素值被設定得較大,前述圖像修正部,將前述第2描繪資料中包含之描繪圖樣的角部的像素的像素值修正成更大的值,而生成前述第3描繪資料。 It is also possible that the pixels superimposed on the drawing pattern have a larger pixel value than the pixels not superimposed on the drawing pattern, and the image correction unit changes the size of the drawing pattern included in the second drawing data. The pixel value of the pixel in the corner is corrected to a larger value to generate the third drawing data.
前述圖像修正部,亦可修正前述第2描繪資料中包含之描繪圖樣的交界線所位處的複數個像素的像素值而生成前述第3描繪資料。 The image correction unit may also correct the pixel values of a plurality of pixels at the boundary of the drawing pattern included in the second drawing data to generate the third drawing data.
亦可具備:第2記憶控制部,進行將前述第1描繪資料保存於第2描繪資料記憶部之控制。 A second memory control unit may be provided to perform control to store the first drawing data in the second drawing data storage unit.
本揭示之另一態樣中,提供一種帶電粒子束描繪系統,具備:射束生成部,生成帶電粒子束;及孔徑部,具有複數個開口部,使前述帶電粒子束通過該些開口部,以生成含有複數道微小射束之多射束;及投影系統,將前述多射束縮小投影至描繪對象物;及遮沒部,介於前述孔徑部與前述投影系統之間,控制前述複數道微小射束朝向前述投影系統,或朝向和前述投影系統相異之方向;及控制部,控制前述射束生成部、前述投影系統及前述遮沒部;及取得部,取得用來對前述描繪對象物描繪之向量形式 的第1描繪資料;及第1圖像變換部,將前述第1描繪資料變換成逐線(raster)形式的第2描繪資料;及圖像修正部,以像素單位修正前述第2描繪資料,生成逐線形式的第3描繪資料;及第2圖像變換部,將前述第3描繪資料變換成向量形式的第4描繪資料;及第1描繪資料記憶部,保存前述第4描繪資料;及檢查部,於對前述描繪對象物之描繪後,進行前述描繪對象物的描繪圖樣之外觀檢查,判斷是否有外觀上的問題;及修正問題判斷部,若藉由前述檢查部判斷出有問題,則判斷前述圖像修正部中的修正處理是否有問題。 In another aspect of the present disclosure, there is provided a charged particle beam drawing system, comprising: a beam generating portion that generates a charged particle beam; and an aperture portion having a plurality of openings through which the charged particle beam passes through the openings, To generate a multi-beam including a plurality of micro-beams; and a projection system to reduce the projection of the multi-beam to the object to be drawn; and a masking portion between the aperture portion and the projection system to control the plurality of channels The tiny beam faces the projection system or a direction different from the projection system; and the control unit controls the beam generation unit, the projection system and the masking unit; and the acquisition unit acquires the object to be drawn Vector form The first drawing data; and the first image conversion part, which converts the first drawing data into a second drawing data in a raster form; and the image correction part, which corrects the second drawing data in pixel units, Generate the third drawing data in line-by-line format; and the second image conversion unit, which converts the third drawing data into vector form of fourth drawing data; and the first drawing data storage unit, which stores the fourth drawing data; and The inspection unit, after drawing the drawing object, performs an appearance inspection of the drawing pattern of the drawing object to determine whether there is a problem in appearance; and corrects the problem determination unit, if the problem is determined by the checking unit, Then, it is determined whether there is a problem with the correction process in the aforementioned image correction unit.
本揭示之另一態樣中,提供一種帶電粒子束描繪系統,具備:射束生成部,生成帶電粒子束;及孔徑部,具有複數個開口部,使前述帶電粒子束通過該些開口部,以生成含有複數道微小射束之多射束;及投影系統,將前述多射束縮小投影至描繪對象物;及遮沒部,介於前述孔徑部與前述投影系統之間,控制前述複數道微小射束朝向前述投影系統,或朝向和前述投影系統相異之方向;及控制部,控制前述射束生成部、前述投影系統及前述遮沒部;及取得部,取得用來對前述描繪對象物描繪之向量形式 的第1描繪資料;及第1圖像變換部,將前述第1描繪資料變換成逐線(raster)形式的第2描繪資料;及圖像修正部,對前述第2描繪資料以像素單位進行修正處理,生成逐線形式的第3描繪資料;及第2圖像變換部,將前述第3描繪資料變換成向量形式的第4描繪資料;及第1描繪資料記憶部,保存前述第4描繪資料;及控制部,基於前述第3描繪資料,控制前述射束生成部、前述投影系統及前述遮沒部,對前述描繪對象物將描繪圖樣予以描繪;及檢查部,於對前述描繪對象物之描繪後,進行前述描繪對象物的描繪圖樣之外觀檢查,判斷是否有外觀上的問題;及第1再生成部,若藉由前述檢查部判斷出有問題,則將前述第4描繪資料予以再生成;及第2再生成部,使用前述再生成之第4描繪資料,將逐線形式的前述第3描繪資料予以再生成;前述控制部,基於前述再生成之前述第3描繪資料,控制前述射束生成部、前述投影系統及前述遮沒部,對前述描繪對象物將描繪圖樣予以再描繪,前述第2圖像變換部,將前述再生成之第3描繪資料再變換成前述第4描繪資料,前述第1描繪資料記憶部,保存前述再變換而成之第 4描繪資料。 In another aspect of the present disclosure, there is provided a charged particle beam drawing system, comprising: a beam generating portion that generates a charged particle beam; and an aperture portion having a plurality of openings through which the charged particle beam passes through the openings, To generate a multi-beam including a plurality of micro-beams; and a projection system to reduce the projection of the multi-beam to the object to be drawn; and a masking portion between the aperture portion and the projection system to control the plurality of channels The tiny beam faces the projection system or a direction different from the projection system; and the control unit controls the beam generation unit, the projection system and the masking unit; and the acquisition unit acquires the object to be drawn Vector form The first drawing data; and the first image conversion part, which converts the first drawing data into a second drawing data in a raster format; and the image correction part, which performs the pixel unit on the second drawing data The correction process generates the third drawing data in the line-by-line format; and the second image conversion unit converts the third drawing data into the fourth drawing data in the vector format; and the first drawing data storage unit stores the fourth drawing data Data; and the control unit, based on the third drawing data, controls the beam generating unit, the projection system, and the masking unit to draw the drawing pattern on the drawing object; and the inspection unit, on the drawing object After drawing, perform a visual inspection of the drawing of the drawing object to determine whether there is a problem with the appearance; and the first regeneration section, if the inspection section determines that there is a problem, the fourth drawing data will be given Regeneration; and the second regeneration unit, using the regenerated fourth drawing data to regenerate the line-by-line third drawing data; the control unit, based on the regenerating third drawing data, control The beam generating unit, the projection system, and the masking unit redraw the drawing pattern of the object to be drawn, and the second image conversion unit converts the regenerated third drawing data into the fourth The drawing data, the first drawing data storage section, stores the first 4 Describe the information.
本揭示之一態樣中,提供一種描繪資料生成方法,係使用基於帶電粒子束而生成的含有複數道微小射束之多射束,來進行描繪對象物的描繪之帶電粒子束描繪裝置中所使用之描繪資料的生成方法,具備:取得用來對前述描繪對象物描繪之向量形式的第1描繪資料之步驟;及將前述第1描繪資料變換成逐線形式的第2描繪資料之步驟;及以像素單位修正前述第2描繪資料,生成逐線形式的第3描繪資料之步驟;及將前述第3描繪資料變換成向量形式的第4描繪資料之步驟;及將前述第4描繪資料保存於第1描繪資料記憶部之步驟。
In one aspect of the present disclosure, a method for generating drawing data is provided in a charged particle beam drawing device that uses multiple beams including a plurality of minute beams generated based on a charged particle beam to draw a drawing object The generating method of the drawing data used includes: a step of obtaining the first drawing data in the form of a vector for drawing the drawing object; and a step of converting the first drawing data into the second drawing data in a line-by-line format; And the step of correcting the second drawing data in pixel units to generate the third drawing data in a line-by-line format; and the step of converting the third drawing data into the fourth drawing data in the form of a vector; and saving the fourth
亦可以是,前述變換成第4描繪資料之步驟,係將前述第3描繪資料予以二元化而生成二元化資料,抽出前述二元資料的輪廓,生成前述第4描繪資料。 Alternatively, the step of converting the fourth rendering data may be to binarize the third rendering data to generate a binary data, extract the outline of the binary data, and generate the fourth rendering data.
亦可以是,於對前述描繪對象物之描繪後,進行前述描繪對象物的描繪圖樣之外觀檢查,判斷是否有外觀上的問題,若判斷出有前述問題,則將有問題之處周邊的前述第4描繪資料從前述第1描繪資料記憶部讀出, 將前述讀出的前述第4描繪資料和前述第1描繪資料比較,基於前述比較之結果,判斷將前述第1描繪資料變換成前述第2描繪資料之處理是否有問題。 Alternatively, after drawing the drawing object, perform a visual inspection of the drawing pattern of the drawing object to determine whether there is a problem with the appearance. If it is determined that there is a problem, the problem surrounding the problem The fourth drawing data is read from the aforementioned first drawing data storage unit, The read fourth drawing data and the first drawing data are compared, and based on the result of the comparison, it is determined whether there is a problem with the process of converting the first drawing data into the second drawing data.
亦可以是,前述第3描繪資料,包含針對複數個像素各者之像素值,前述變換成第4圖像之步驟,係進行區域分割,該區域分割係將前述第3描繪資料內的具有同一像素值的鄰接之像素範圍統整成一個分割區域,生成將前述被區域分割而成的分割區域予以向量化而成之前述第4描繪資料。 It may also be that the third drawing data includes pixel values for each of the plurality of pixels, and the step of transforming to the fourth image is to perform region division, and the region division is the same as that in the third drawing data. The adjacent pixel range of the pixel value is unified into one divided area, and the fourth drawing data obtained by vectorizing the divided area divided by the area is generated.
亦可以是,前述第3描繪資料,包含針對複數個像素各者之像素值,基於前述第3描繪資料,進行將前述帶電粒子束的正向散射及背向散射納入考量之描繪模擬,取得蓄積劑量分布,將前述蓄積劑量分布變換成向量資料,將前述變換而成之向量資料的頂點數予以刪減,而生成前述第4描繪資料。 Alternatively, the third drawing data may include pixel values for each of the plurality of pixels. Based on the third drawing data, a drawing simulation that takes the forward scattering and backscattering of the charged particle beam into consideration may be performed to obtain accumulation. For the dose distribution, the accumulated dose distribution is converted into vector data, and the number of vertices of the converted vector data is truncated to generate the fourth drawing data.
亦可以是,於對前述描繪對象物之描繪後,進行前述描繪對象物的描繪圖樣之外觀檢查,判斷是否有外觀上的問題,若判斷出有前述問題,則將有問題之處周邊的前述第 4描繪資料從前述第1描繪資料記憶部讀出,將前述讀出的前述第4描繪資料和前述第1描繪資料比較,基於前述比較之結果,判斷修正前述第2描繪資料而生成前述第3描繪資料之處理是否有問題。 Alternatively, after drawing the drawing object, perform a visual inspection of the drawing pattern of the drawing object to determine whether there is a problem with the appearance. If it is determined that there is a problem, the problem surrounding the problem First 4 The drawing data is read from the first drawing data storage unit, the read fourth drawing data and the first drawing data are compared, and based on the result of the comparison, the second drawing data is judged and corrected to generate the third Describe whether there is a problem with the processing of data.
按照本揭示,會使管理修正處理後的描繪資料變得容易,能夠簡易且迅速地判斷從向量形式至逐線形式之資料變換或修正處理是否有問題。 According to the present disclosure, it is easy to manage the drawing data after the correction processing, and it is possible to easily and quickly determine whether there is a problem with the data conversion or correction processing from the vector format to the line-by-line format.
1‧‧‧帶電粒子束描繪裝置 1‧‧‧ charged particle beam drawing device
2‧‧‧照明系統 2‧‧‧Lighting system
3‧‧‧多射束生成系統 3‧‧‧Multi-beam generation system
4‧‧‧投影系統 4‧‧‧Projection system
5‧‧‧平台 5‧‧‧platform
6a‧‧‧第1電磁透鏡 6a‧‧‧The first electromagnetic lens
6b‧‧‧第2電磁透鏡 6b‧‧‧Second electromagnetic lens
6c‧‧‧第3電磁透鏡 6c‧‧‧The third electromagnetic lens
7‧‧‧電子槍 7‧‧‧ electron gun
8‧‧‧抽出系統 8‧‧‧Extraction system
9‧‧‧照明透鏡 9‧‧‧Illumination lens
9a‧‧‧遮沒偏向器 9a‧‧‧Massive deflector
10‧‧‧孔徑構件 10‧‧‧Aperture member
11‧‧‧第1偏向器 11‧‧‧The first deflector
12‧‧‧第2偏向器 12‧‧‧The second deflector
13‧‧‧描繪對象物 13‧‧‧Drawing objects
16‧‧‧孔徑板 16‧‧‧Aperture plate
17‧‧‧遮沒板 17‧‧‧Masking board
18‧‧‧接地電極 18‧‧‧Ground electrode
19‧‧‧偏向電極 19‧‧‧biased electrode
40‧‧‧描繪圖樣 40‧‧‧Draw a picture
41‧‧‧控制部 41‧‧‧Control Department
42‧‧‧取得部 42‧‧‧ Acquisition Department
43‧‧‧第1圖像變換部 43‧‧‧The first image conversion unit
44‧‧‧圖像修正部 44‧‧‧Image Correction Department
45‧‧‧第2圖像變換部 45‧‧‧The second image conversion unit
47‧‧‧第1描繪資料記憶部 47‧‧‧The first drawing data memory department
49‧‧‧第2描繪資料記憶部 49‧‧‧ 2nd drawing data memory department
50‧‧‧檢查部 50‧‧‧ Inspection Department
51‧‧‧修正問題判斷部 51‧‧‧Fixed problem judgment department
52‧‧‧第3圖像變換部 52‧‧‧ Third image conversion unit
53‧‧‧第1再生成部 53‧‧‧First Regeneration Department
54‧‧‧第2再生成部 54‧‧‧Second Regeneration Department
[圖1]依一實施形態之帶電粒子束描繪裝置的概略構成示意圖。 [Fig. 1] A schematic configuration diagram of a charged particle beam drawing device according to an embodiment.
[圖2]多射束生成系統的具體的構成一例示意圖。 [Fig. 2] A schematic diagram showing an example of a specific configuration of a multi-beam generating system.
[圖3]從孔徑板的上方觀看形成於孔徑板與遮沒板之複數個開口部的俯視圖。 [Fig. 3] A plan view of a plurality of openings formed in the aperture plate and the shielding plate, viewed from above the aperture plate.
[圖4]一實施形態之控制系統的具體的內部構成一例示意方塊圖。 [Fig. 4] A schematic block diagram showing an example of a specific internal structure of a control system according to an embodiment.
[圖5A]圖4的圖像修正部所進行之修正處理的第1例說明圖。 [FIG. 5A] An explanatory diagram of a first example of correction processing performed by the image correction unit in FIG. 4. [FIG.
[圖5B]圖4的圖像修正部所進行之修正處理的第1例說明圖。 [Fig. 5B] An explanatory diagram of a first example of correction processing performed by the image correction unit in Fig. 4.
[圖6]圖4的圖像修正部所進行之修正處理的第2例說明圖。 [Fig. 6] An explanatory diagram of a second example of correction processing performed by the image correction unit of Fig. 4.
[圖7]圖4的圖像修正部所進行之修正處理的第2例說明圖。 7 is an explanatory diagram of a second example of correction processing performed by the image correction unit in FIG. 4.
[圖8]圖4的圖像修正部所進行之修正處理的第2例說明圖。 [Fig. 8] An explanatory diagram of a second example of correction processing performed by the image correction unit of Fig. 4.
[圖9]圖4的圖像修正部所進行之修正處理的第2例說明圖。 9 is an explanatory diagram of a second example of correction processing performed by the image correction unit of FIG. 4.
[圖10]依一變形例之控制系統的具體的內部構成示意方塊圖。 [Fig. 10] A schematic block diagram of a specific internal configuration of a control system according to a modification.
[圖11]包括圖像修正處理與錯誤因素辨明處理在內之控制系統的處理手續的第1例示意流程圖。 [Fig. 11] A schematic flowchart of a first example of processing procedures of a control system including image correction processing and error factor identification processing.
[圖12]控制系統的再描繪處理的一例示意流程圖。 [Fig. 12] A schematic flowchart of an example of the redrawing process of the control system.
[圖13A]第3描繪資料的一例示意圖。 [FIG. 13A] A schematic diagram of an example of the third drawing data.
[圖13B]將圖13A的第3描繪資料予以二元化之例示意圖。 [FIG. 13B] A schematic diagram of an example of binarizing the third drawing data in FIG. 13A.
[圖14]基於圖13B的二元資料而抽出輪廓之例示意圖。 [Fig. 14] A schematic diagram of an example of extracting a contour based on the binary data of Fig. 13B.
[圖15]使用以圖12的第1手法生成的第4描繪資料來進行圖11的步驟S9的處理之情形之詳細處理手續示意流程圖。 [Fig. 15] A detailed flowchart of a detailed processing procedure in a case where the processing of step S9 in Fig. 11 is performed using the fourth drawing data generated by the first method in Fig. 12.
[圖16]圖15的處理之模型化示意圖。 [Fig. 16] A modeled schematic diagram of the processing of Fig. 15.
[圖17]藉由第2手法進行圖11的步驟S5之情形之處理手續示意流程圖。 [Fig. 17] A schematic flowchart of the processing procedure in the case of performing step S5 in Fig. 11 by the second method.
[圖18A]第3描繪資料的一例示意圖。 [FIG. 18A] A schematic diagram of an example of the third drawing data.
[圖18B]將圖18A的第3描繪資料因應劑量而做區 域分割之例示意圖。 [FIG. 18B] The third drawing data of FIG. 18A is divided according to the dose Illustration of an example of domain segmentation.
[圖19]將圖18B的各分割區域變換成由多邊形化的向量資料所構成之第4描繪資料之例示意圖。 [Fig. 19] A schematic diagram of an example of converting each divided region in Fig. 18B into fourth drawing data composed of polygonal vector data.
[圖20]使用以圖17的第2手法生成的第4描繪資料來進行圖11的步驟S10的處理之情形之詳細處理手續示意流程圖。 [Fig. 20] A detailed flowchart of a detailed processing procedure in a case where the processing of step S10 of Fig. 11 is performed using the fourth drawing data generated by the second method of Fig. 17.
[圖21A]圖20的處理之模型化說明圖。 [FIG. 21A] A modeled explanatory diagram of the processing of FIG. 20. [FIG.
[圖21B]圖20的處理之模型化說明圖。 [Fig. 21B] A modeled explanatory diagram of the processing of Fig. 20.
[圖22]基於重做圖11的步驟S4的處理而生成之第3描繪資料,藉由圖20的處理而生成之第4描繪資料示意圖。 [Fig. 22] A schematic diagram of fourth drawing data generated by the process of Fig. 20 based on the third drawing data generated by redoing the process of step S4 of Fig. 11.
[圖23]藉由第3手法進行圖11的步驟S5之情形之處理手續示意流程圖。 [Fig. 23] A schematic flowchart of the processing procedure in the case where step S5 in Fig. 11 is performed by the third method.
[圖24A]第3描繪資料的一例示意圖。 [FIG. 24A] A schematic diagram of an example of the third drawing data.
[圖24B]使用圖24A的第3描繪資料進行描繪模擬而取得之蓄積劑量分布示意圖。 [FIG. 24B] A schematic diagram of the accumulated dose distribution obtained by drawing simulation using the third drawing data of FIG. 24A.
[圖25A]圖23的步驟S62與S63的處理說明圖。 [Fig. 25A] An explanatory diagram of the processing of steps S62 and S63 of Fig. 23.
[圖25B]圖23的步驟S62與S63的處理說明圖。 [Fig. 25B] An explanatory diagram of the processing of steps S62 and S63 of Fig. 23.
[圖26]使用以圖23的第3手法生成的第4描繪資料來進行圖11的步驟S10的處理之情形之詳細處理手續示意流程圖。 [Fig. 26] A detailed flowchart of a detailed processing procedure in a case where the processing of step S10 of Fig. 11 is performed using the fourth drawing data generated by the third method of Fig. 23.
[圖27]圖26的處理之模型化說明圖。 [Fig. 27] A modeled explanatory diagram of the processing of Fig. 26.
[圖28]控制系統的再描繪處理的一例示意流程圖。 [Fig. 28] A schematic flowchart of an example of the redrawing process of the control system.
[圖29]進行圖28的處理之控制系統的內部構成示意 方塊圖。 [FIG. 29] Schematic diagram of the internal configuration of the control system that performs the processing of FIG. 28 Block diagram.
[圖30]控制系統的處理手續的第2例示意流程圖。 [Fig. 30] A schematic flowchart of a second example of the processing procedure of the control system.
[圖31]依第2例之控制系統方塊圖。 [FIG. 31] A block diagram of a control system according to the second example.
以下,針對本揭示之實施形態詳細說明。圖1為依一實施形態之帶電粒子束描繪裝置1的概略構成示意圖。圖1的帶電粒子束描繪裝置1,是基於對曝光用光罩或矽晶圓等描繪對象物形成微細圖樣之目的而被使用。
Hereinafter, the embodiments of the present disclosure will be described in detail. FIG. 1 is a schematic configuration diagram of a charged particle
圖1的帶電粒子束描繪裝置1,概分之,係具備照明系統2、多射束生成系統3、投影系統4、及控制系統35。
The charged particle
照明系統2,具有電子槍(射束生成部)7、抽出系統8、偏向器9a、及照明透鏡9。電子槍7,放射電子束(電子線)。另,依本實施形態之帶電粒子束描繪裝置1用於描繪的帶電粒子,未必限定於電子束。例如,可為氫離子或重離子等各種離子的射束,亦可為帶電原子團簇或帶電分子的射束。此處,所謂重離子,係指比碳(C)還重的元素(例如氧、氮等)之離子。或是,所謂重離子,係指氖(Ne)、氬(Ar)、氪(Kr)、氙(Xe)等。以下,主要說明使用電子束作為帶電粒子束之例子。
The
偏向器9a,控制電子槍7所放射的電子束的行進方向1a。照明透鏡9,將電子束的行進方向排列整
齊。通過了照明透鏡9的電子束,會成為幅度寬而遠心(telecentric)的射束1b。
The
多射束生成系統3,如後詳述般,係從通過了照明透鏡9的電子束1b生成含有複數道微小射束之多射束1c。
The
投影系統4,具有第1電磁透鏡6a、第1偏向器11、第2電磁透鏡6b、孔徑構件10、第3電磁透鏡6c、及第2偏向器12。入射至投影系統4的多射束1c,會依序通過第1電磁透鏡6a、第1偏向器11及第2電磁透鏡6b。其後,僅有通過了孔徑構件10的開口部之多射束依序通過了第3電磁透鏡6c及第2偏向器12後,照射至被載置於平台5上之描繪對象物13而進行描繪。投影系統4,使用第1~第3電磁透鏡6a~6c,將多射束縮小投影至描繪對象物13上。平台5,被做成可於其設置面的二維方向移動。故,一面使平台5移動,一面藉由投影系統4將多射束縮小投影至描繪對象物13上,藉此便能對描繪對象物13上的任意場所進行描繪。描繪對象物13,為曝光用光罩或矽晶圓等。
The
除此之外,投影系統4,還進行將第1~第3電磁透鏡6a~6c及第1~第2偏向器11、12中的色像差及幾何性像差予以廣範圍地補償之光學性處理。
In addition, the
控制系統35,如後詳述般,係控制照明系統2、多射束生成系統3及投影系統4。除此之外,控制系統35,還進行描繪圖樣的外觀檢查、或後述修正處理之
控制等。
The
圖2為多射束生成系統3的具體的構成一例示意圖。圖2之多射束生成系統3,具有孔徑板(孔徑部)16、及遮沒板(遮沒部)17。
FIG. 2 is a schematic diagram of an example of a specific configuration of the
孔徑板16,具有保護板16免受電子束衝撞之保護層15、及使多射束放射之複數個開口部16a。保護層15非必要的構件,省略亦無妨。
The
遮沒板17,具有配合孔徑板16的各開口部16a而形成之複數個開口部17a。
The masking
圖3為從孔徑板16的上方觀看形成於孔徑板16與遮沒板17之複數個開口部16a、17a的俯視圖。圖3例子中,於孔徑板16的面方向的二維方向以一定間隔配置有複數個開口部16a。
FIG. 3 is a plan view of the plurality of
如圖2所示,在遮沒板17的各開口部17a的鄰近,設有一組電極亦即接地電極18與偏向電極19。藉由使接地電極18、與相對應的偏向電極19通電,會使通過相對應的開口部16a、17a之電子束偏向,而如圖2的箭頭21所示,讓電子束不通過圖1的孔徑板10。另一方面,當不使接地電極18、與相對應的偏向電極19通電的情形下,電子束不會被偏向,而如圖2的箭頭20所示,會通過圖1的孔徑板10。通電,是藉由將和非導通狀態下的預設電壓足夠相異之電壓施加於接地電極18與偏向電極19之間來進行。不通電狀態下的預設電壓為0V,接地電極18與偏向電極19成為同電位。接地電極18與偏
向電極19之電壓控制,是藉由控制系統35來進行。
As shown in FIG. 2, a group of electrodes, that is, a
像這樣,對於遮沒板17的各開口部17a各者,能夠控制是否使電子束偏向,因此能夠任意地控制通過圖1的孔徑板10之多射束的射束數及射束位置。
In this way, each of the
單射束方式之帶電粒子束描繪裝置1的情形下,只會對描繪對象物13上照射1道電子束,故可將該截面形狀加工成矩形等任意形狀,並在調節成任意強度的狀態下照射。是故,例如亦可達成於曝光對象面上一面掃描矩形的照射點一面描繪矩形狀的圖樣。因此,尺寸誤差不會發生,而能進行正確的圖樣形成,但無法期盼描繪速度的提升,因此會發生描繪時間耗費較久這樣的問題。
In the case of the charged particle
相對於此,多射束方式之帶電粒子束描繪裝置1的情形下,具有能夠使用多數道電子束進行極高速的描繪之優點,但卻難以個別地控制各個射束的截面形狀,或個別地控制各個射束的強度。更具體而言,無法設置將通過了微細的孔徑板16的開口部16a之各個電子束予以個別地成形、或個別地做強度調節之機構。
On the other hand, in the case of the multi-beam charged particle
依照當前利用的一般性的多射束方式之帶電粒子束描繪裝置1,雖能在曝光對象面上形成直徑的多數個圓形的照射點,但無法將照射點成形為任意形狀,不得不採用藉由各個電子束的ON/OFF控制來進行描繪之方法。鑑此,為了進行此多射束方式之帶電粒子束描繪裝置1的描繪控制,會利用藉由二維像素排列而構成之描繪資料。
According to the currently used general multi-beam method of charged particle
此外,依照多射束方式之帶電粒子束描繪裝置1,無法個別地控制多數道電子束的強度。惟,藉由控制遮沒板17,便可將各個電子束予以個別地ON/OFF。鑑此,係採用下述方法,即,對於各個照射基準點各者,將分別照射之電子束予以個別地做ON/OFF控制,改變曝光時間,藉此改變曝光強度。這樣的曝光時間之控制,實際上是以曝光次數之控制這樣的形式來進行。這是由於實際上是一面使平台5二維地(圖1的左右方向及前後方向)移動,一面將多數道電子束於描繪對象物13上一面二維地掃描一面進行描繪之緣故。
In addition, the charged particle
例如,若設計成將數奈秒左右的曝光時間事先訂定為1次電子束照射時的單位曝光時間,每當1次的電子束照射完成,便使平台5於X軸方向移動恰好間距d,再進行下一次的電子束照射,那麼對於特定的照射基準點Q而言,是藉由每次相異的電子束(鄰接之電子束)來進行單位曝光時間份的曝光。此時,若對各個電子束各者進行個別的ON/OFF控制,則雖為階段式,但可達成對各個照射基準點各者設定獨特的(particular)曝光強度。如後述般,藉由控制曝光強度,便可達成將描繪圖樣的形狀或圖樣寬幅予以微調整。 For example, if it is designed to predetermine the exposure time of several nanoseconds in advance as the unit exposure time when one electron beam is irradiated, each time the electron beam irradiation is completed, the stage 5 is moved in the X-axis direction by exactly the interval d Then, the next electron beam irradiation is performed. For a specific irradiation reference point Q, exposure is performed by a unit of exposure time with different electron beams (adjacent electron beams) each time. At this time, if individual ON/OFF control is performed for each electron beam, although it is a step type, it is possible to achieve the setting of a particular exposure intensity for each irradiation reference point. As described later, by controlling the exposure intensity, it is possible to finely adjust the shape of the drawing or the width of the drawing.
圖4為本實施形態之控制系統35的具體的內部構成一例示意方塊圖。圖4之控制系統35,具有控制部41、取得部42、第1圖像變換部43、圖像修正部44、第2圖像變換部45、第1記憶控制部46、第1描繪資料
記憶部47、第2記憶控制部48、及第2描繪資料記憶部49。圖4當中,取得部42、第1圖像變換部43、圖像修正部44、第2圖像變換部45、第1記憶控制部46及第2記憶控制部48,係設於帶電粒子束描繪裝置1的內部,而第1描繪資料記憶部47及第2描繪資料記憶部49則設於和帶電粒子束描繪裝置1分開的裝置(例如檢查裝置)內。本說明書中,將帶電粒子束描繪裝置1與檢查裝置合稱為帶電粒子束描繪系統。
FIG. 4 is a schematic block diagram showing an example of a specific internal configuration of the
控制部41,控制帶電粒子束描繪裝置1內的各部。控制部41,例如可由一台或複數台的電腦來構成,但實現控制部41之具體構成並不特別過問。控制部41,亦可包含後述取得部42、第1圖像變換部43、圖像修正部44及第2圖像變換部45的至少一部分功能。
The
取得部42,取得用來對描繪對象物13描繪之向量形式的第1描繪資料。此處,所謂向量形式,意指藉由線段資訊與線的方向資訊來管理描繪資料。取得部42,經由網路、或是透過光碟等記錄媒介取得以未圖示的布局設計工具等生成之第1描繪資料。第1描繪資料,為GDS或OASIS等泛用的向量形式的描繪資料。
The obtaining
第1圖像變換部43,將取得部42取得的第1描繪資料,變換成逐線形式的第2描繪資料。此處,所謂逐線形式,意指藉由像素單位的像素資料來管理描繪資料。
The first
圖像修正部44,以像素單位修正第2描繪資
料以使第2描繪資料趨近理想的描繪資料,而生成逐線形式的第3描繪資料。圖像修正部44,維持逐線形式來進行修正處理的理由在於,其僅抽出第2描繪資料的圖樣圖像的特徵性之處來進行修正處理。
The
第2圖像變換部45,將第3描繪資料變換成向量形式的第4描繪資料。第2圖像變換部45,將描繪資料從逐線形式變換成向量形式的理由在於,若維持逐線形式,則資料量會變龐大,不適合保存。
The second
第1描繪資料記憶部47,保存第2圖像變換部45進行了圖像變換而成之向量形式的第4描繪資料。第1記憶控制部46,進行將第4描繪資料保存於第1描繪資料記憶部47之控制。此外,第2描繪資料記憶部49,保存修正處理前的向量形式的第1描繪資料。第2記憶控制部48,進行將第1描繪資料保存於第2描繪資料記憶部49之控制。另,第2描繪資料記憶部49,非必要的構成部分,因此亦可省略。設置第2描繪資料記憶部49的優點為,當在對描繪對象物13描繪之圖樣的外觀檢查中有問題,亦即被判斷有錯誤時,能夠協助探究該問題的原因。也就是說,圖樣的外觀檢查中就造成錯誤之原因而言,可認為有從向量形式至逐線形式之資料變換、修正處理之問題(錯誤)、和資料變換及修正處理以外之問題(錯誤)。欲判斷是否為修正處理之問題,只要將修正處理前的第1描繪資料與修正處理後的第4描繪資料比較即可。故,若第2描繪資料記憶部49中存儲有修正處理前
的第1描繪資料,便能簡易且迅速地判斷是否為修正處理之錯誤。
The first drawing
圖5為圖4的圖像修正部44所進行之修正處理的第1例說明圖。描繪於描繪對象物13上之描繪圖樣40的角部40a,即使設計上的理想圖樣為具有陡峭角度的角部,於實際描繪時也會容易變成帶有圓弧的形狀。這是由於,電子束的射束形狀帶圓弧、及電子束的射束徑有可能比像素寬幅還大、及電子束在射束口徑的中心部亮度最高而隨著愈接近周緣則亮度漸變弱等。
FIG. 5 is an explanatory diagram of a first example of correction processing performed by the
鑑此,修正處理的第1例中,是將和描繪圖樣40的角部40a相對應之像素的曝光強度更加提高,以進行抑制實際的圖樣形狀的圓弧之修正處理。
In view of this, in the first example of the correction process, the exposure intensity of the pixel corresponding to the
圖5係將描繪圖樣40的僅1個角部40a擴大圖示。圖5(a)揭示角部40a中的第1描繪資料、及角部40a中的第2描繪資料。第1描繪資料,為向量形式的描繪資料,包含描繪圖樣40的線方向資訊與線段長度資訊。第2描繪資料,包含構成描繪圖樣40之各像素的像素值資訊。此處,所謂像素,為描繪圖樣40內的單位區域,所謂像素值,為描繪圖樣40內的每單位區域的電子束的照射量亦即劑量。
FIG. 5 is an enlarged view of only one
圖5例子中,描繪圖樣40的角部40a的二邊相夾之角度為90度,描繪圖樣40的交界線通過各像素的中央。在此情形下,第2描繪資料,將描繪圖樣40存在於像素內的全域之像素的像素值訂為15、描繪圖樣40存
在於像素內的僅一半之像素的像素值訂為7、描繪圖樣40的角部40a所存在之像素的像素值訂為4、描繪圖樣40不存在於像素內之像素的像素值訂為0。描繪圖樣40的角部40a所存在之像素,其描繪圖樣40係存在於像素內的1/4面積,因此其像素值為15×1/4=3.75,四捨五入成為4。
In the example of FIG. 5, the angle between the two sides of the
圖5(b)揭示圖像修正部44所做的修正處理後的第3描繪資料。修正處理前,是將描繪圖樣40的角部40a所存在之像素的像素值訂為4,但藉由進行修正處理,將此像素的像素值變更成15。如此一來,將第3描繪資料做向量變換而成之第4描繪資料,會成為角部40a被擴大成矩形狀之描繪資料。第1描繪資料記憶部47,保存此第4描繪資料。第4描繪資料為向量形式,因此相較於保存逐線形式的第3描繪資料,能夠大幅地刪減保存的資料量。
FIG. 5(b) reveals the third drawing data after the correction process by the
如圖5(b)所示,若基於描繪圖樣40的角部40a被擴大成矩形狀之描繪資料來實際地進行描繪,則角部40a的圓弧會受到抑制,而趨近設計上的理想的描繪圖樣40。
As shown in FIG. 5(b), if the
像這樣,圖像修正部44,係從描繪對象物13的描繪資料亦即逐線形式的第2描繪資料當中,檢測描繪圖樣40的角部40a,而修正角部40a的像素值。第2圖像變換部45,將修正後的第3描繪資料變換成向量形式的第4描繪資料,保存於第1描繪資料記憶部47。如此一
來,便能以較少的資料量來管理修正後的描繪資料,因此能夠刪減當將修正後的第4描繪資料傳送至設計中心等做驗證時之資料量,而變得易於進行第4描繪資料之驗證。
In this way, the
另,圖像修正部44進行修正處理者,並不僅限定於描繪圖樣40的角部40a。例如,亦可針對描繪圖樣40的交界線也進行修正處理。
In addition, the
圖6~圖9為圖4的圖像修正部44所進行之修正處理的第2例說明圖。當1個像素為5nm的圖樣寬幅的情形下,針對能夠被5整除之圖樣寬幅的描繪圖樣40,描繪圖樣40的交界線會通過像素的交界位置。圖6揭示和5的倍數的圖樣寬幅(例如20nm)的描繪圖樣40相對應之第3描繪資料的例子。圖6中,將描繪圖樣40所存在之像素的像素值訂為15、描繪圖樣40不存在之像素的像素值訂為0。圖6例子中,描繪圖樣40的交界線和像素的交界位置一致。
6 to 9 are explanatory diagrams of a second example of the correction process performed by the
另一方面,針對無法被5整除之圖樣寬幅的描繪圖樣40,必須調整位於交界線之像素的像素值,將交界線從像素的交界位置挪移。圖7揭示欲描繪19nm的圖樣寬幅的描繪圖樣40,而將位於描繪圖樣40的交界線之像素的像素值訂為15之例子。
On the other hand, for the
假設使用如圖7這樣的第3描繪資料進行了描繪時之圖樣寬幅為19.5nm。在此情形下,必須將圖樣寬幅再縮窄0.5nm份量,因此例如如圖8般,將位於描繪圖樣40的交界線之像素的像素值訂為更小的值亦即13。
此時的圖樣寬幅如圖8所示,假設為18.5nm,則例如如圖9般,將位於描繪圖樣40的交界線之像素的像素值,沿著交界線交互地反覆設為13與14。圖像修正部44,藉由反覆這樣的修正,來進行修正處理使成為最佳的圖樣寬幅。
It is assumed that the width of the pattern when drawing is performed using the third drawing data as shown in FIG. 7 is 19.5 nm. In this case, the width of the pattern must be narrowed by another 0.5 nm. Therefore, for example, as shown in FIG. 8, the pixel value of the pixel located at the boundary line drawing the
圖9的情形下,沿著交界線之方向的像素值為13與14,將第3描繪資料變換而成之向量形式的第4描繪資料會成為折線形狀。即使交界線成為折線形狀,其凹凸差為0.5nm程度,實用上沒有問題。惟,第4描繪資料中,會變成包含折線的各交點座標、和折線的長度及方向,相較於具有直線狀的交界線之描繪圖樣40而言,資料量會增加。惟,相較於逐線形式的第3描繪資料而言,資料量仍少得多。
In the case of FIG. 9, the pixel values along the direction of the boundary line are 13 and 14, and the fourth drawing data in the form of a vector converted from the third drawing data becomes a polyline shape. Even if the boundary line has a broken line shape, the unevenness is about 0.5 nm, and there is no practical problem. However, in the fourth drawing data, the coordinates of each intersection point including a polyline, and the length and direction of the polyline, compared to the
作為驗證圖像修正部44進行了修正處理的第3描繪資料中是否有錯誤之手法,雖亦可考慮把將第3描繪資料做向量變換而成之第4描繪資料傳送至上述的設計中心等來進行驗證,但亦可藉由控制系統35來驗證有無錯誤。錯誤,是基於第3描繪資料對描繪對象物13實際進行描繪,而使用第4描繪資料進行該描繪圖樣40的外觀檢查來檢測。作為檢測出錯誤的因素,有問題在於圖像修正部44的修正處理之情形、及問題在於修正處理以外的處理之情形。故,當檢測出錯誤的情形下,必須辨明錯誤的因素。
As a method of verifying whether the third drawing data that has been corrected by the
藉由控制系統35進行至錯誤因素的辨明處理
為止的情形下之方塊圖構成係成為圖10。圖10為對圖4追加了檢查部50及修正問題判斷部51而成者。檢查部50,進行描繪於描繪對象物13之描繪圖樣40的外觀檢查,判斷問題的原因是否在於圖像修正部44的修正處理。修正問題判斷部51,判斷圖像修正部44的修正處理是否有問題,若有問題,則再度對圖像修正部44指示修正處理。圖10當中,取得部42、第1圖像變換部43、圖像修正部44、第2圖像變換部45、第1描繪資料記憶部47、第2描繪資料記憶部49、檢查部50及修正問題判斷部51,係構成描繪資料驗證裝置。
Identification of error factors by the
圖11為包括圖像修正處理與錯誤因素辨明處理在內之控制系統35的處理手續的第1例示意流程圖。
FIG. 11 is a schematic flowchart of a first example of processing procedures of the
首先,藉由取得部42,取得用來對描繪對象物13描繪之向量形式的第1描繪資料(步驟S1)。取得的第1描繪資料,被保存於第2描繪資料記憶部49(步驟S2)。此步驟S2之處理,係穿插於後述步驟S3~S6之處理進行。接著,藉由第1圖像變換部43,將第1描繪資料變換成逐線形式的第2描繪資料(步驟S3)。接著,藉由圖像修正部44進行第2描繪資料的修正處理,生成逐線形式的第3描繪資料(步驟S4)。接著,藉由第2圖像變換部45,將第3描繪資料變換成向量形式的第4描繪資料(步驟S5)。步驟S5之處理的細節後述。
First, the
接著,第1記憶控制部46,進行將第4描繪資料保存於第1描繪資料記憶部47之控制(步驟S6)。
第1描繪資料記憶部47,例如設於與帶電粒子束描繪裝置1進行資訊通訊之未圖示之伺服器的內部。
Next, the first
接著,控制部41,基於第3描繪資料,對描繪對象物13進行描繪,形成描繪圖樣40(步驟S7)。上述步驟S1~S7之處理,是藉由帶電粒子束描繪裝置進行。後述步驟S8~S11之處理,是藉由檢查裝置進行。
Next, the
步驟S8中,將形成的描繪圖樣40藉由未圖示之拍攝裝置拍攝,並分析拍攝的圖像,進行描繪圖樣40的外觀檢查。外觀檢查中,例如進行Die to Die檢查或Die to Database檢查。Die to Die檢查,為在形成有描繪圖樣40之描繪對象物13上,將同一種類的單元(cell)彼此比較之檢查。所謂單元,為構成描繪圖樣40的基本圖樣。一個描繪圖樣40,是將多數個單元組合而構成。雖可能存在形狀相異的複數種類的單元,但將各種類的單元以恰好任意的數量組合來構成描繪圖樣40。Die to Die檢查中,是將檢查對象單元的拍攝圖像,和同一形狀的另一單元的拍攝圖像比較,來進行外觀檢查。另一方面,Die to Database檢查,是將描繪圖樣40的拍攝圖像和第1描繪資料比較,來進行外觀檢查。比較所使用之第1描繪資料,亦可使用從第2描繪資料記憶部49讀出者。
In step S8, the formed
接著,外觀檢查之結果,判斷描繪圖樣40是否有外觀上的問題(步驟S9)。若沒有外觀上的問題則結束圖11之處理,若有外觀上的問題,則將被保存於第1描繪資料記憶部47之第4描繪資料、和被保存於第2
描繪資料記憶部49之第1描繪資料比較,判斷以圖像修正部44進行之修正處理是否有問題(步驟S10)。步驟S10之處理的細節後述。如果判斷修正處理沒有問題,則認定問題在於修正處理以外,並執行事先訂定好的錯誤處理(步驟S11)。若步驟S10中判斷修正處理有問題,則回到步驟S4,重做第2描繪資料的修正處理。
Next, as a result of the visual inspection, it is determined whether the
欲進行步驟S5之處理,可考慮幾種手法。以下,依序說明代表性的第1手法~第3手法。 To perform the processing in step S5, several methods can be considered. Hereinafter, representative first to third techniques will be described in order.
圖12為第1手法的處理手續示意流程圖。首先,將以圖11的步驟S4生成的第3描繪資料予以二元化(binarization)(二元化部,步驟S21)。圖13A為第3描繪資料的一例示意圖,圖13B為將圖13A的第3描繪資料予以二元化之例示意圖。圖13A的第3描繪資料,為最小值0,最大值15之像素單位的逐線資料。圖12的步驟S21中,適當設定閾值,將閾值以上的逐線資料設為1、未滿閾值的逐線資料設為0而予以二元化。閾值可設定任意的值,但圖13B揭示將閾值訂為5而二元化之例子。藉由此二元化,能夠將像素單位的資料以1位元來表現,因此能夠大幅地刪減資料量。 FIG. 12 is a schematic flowchart of the processing procedure of the first method. First, the third drawing data generated in step S4 of FIG. 11 is binarized (binarization unit, step S21). 13A is a schematic diagram of an example of the third drawing data, and FIG. 13B is a schematic diagram of an example of binarizing the third drawing data of FIG. 13A. The third drawing data in FIG. 13A is line-by-line data in pixel units with a minimum value of 0 and a maximum value of 15. In step S21 of FIG. 12, the threshold is appropriately set, and the line-by-line data above the threshold is set to 1 and the line-by-line data under the threshold is set to 0 to binarize. The threshold value can be set to an arbitrary value, but FIG. 13B discloses an example in which the threshold value is set to 5 to be binarized. By this binarization, data in pixel units can be expressed in one bit, so the amount of data can be greatly reduced.
當進行步驟S21之處理時,亦可設置相異值的複數個閾值,依各閾值各者生成二元資料。二元資料,其資料量遠比原本的第3描繪資料還小,因此即使設置複數個二元資料,也不會有資料量極端增大之虞。 When the process of step S21 is performed, a plurality of thresholds with different values can also be set, and binary data is generated according to each threshold. The amount of binary data is much smaller than the original 3rd drawing data. Therefore, even if a plurality of binary data is set, there will be no risk of extremely increasing the amount of data.
接著,基於二元化後的資料,抽出描繪圖樣 的輪廓,生成向量資料亦即第4描繪資料(輪廓抽出部,步驟S22)。生成的第4描繪資料,藉由圖11的步驟S6,被保存於第1描繪資料記憶部。 Then, based on the binarized data, draw a drawing pattern Of the outline, generating vector data, that is, fourth drawing data (outline extraction unit, step S22). The generated fourth drawing data is stored in the first drawing data storage unit in step S6 in FIG. 11.
圖14為基於圖13B的二元資料而抽出輪廓之例示意圖。輪廓沿著1與0的交界被抽出,生成含有輪廓資訊之向量資料。 FIG. 14 is a schematic diagram showing an example of contour extraction based on the binary data of FIG. 13B. The contour is extracted along the boundary between 1 and 0, and vector data containing contour information is generated.
圖15為使用以圖12的第1手法生成的第4描繪資料來進行圖11的步驟S9的處理之情形之詳細處理手續示意流程圖。若圖11的步驟S9中判定描繪圖樣有問題,則將被判定有問題之處附近的第4描繪資料,自第1描繪資料記憶部讀出(步驟S31)。 FIG. 15 is a schematic flowchart of a detailed processing procedure in a case where the processing of step S9 of FIG. 11 is performed using the fourth drawing data generated by the first method of FIG. 12. If it is determined in step S9 of FIG. 11 that there is a problem with the drawing pattern, the fourth drawing data in the vicinity of the problematic location is read from the first drawing data storage unit (step S31).
接著,將步驟S31中讀出的第4描繪資料和第1描繪資料比較(步驟S32)。比較之結果,判定是否發生了規定尺寸以上的資料不一致(步驟S33)。若步驟S33中檢測出不一致,則判定從第1描繪資料變換至第2描繪資料時發生了某種問題(步驟S34),而移往圖11的步驟S3。若步驟S33中未檢測出不一致,則進行圖11的步驟S11之錯誤處理。 Next, the fourth drawing data read in step S31 and the first drawing data are compared (step S32). As a result of the comparison, it is determined whether or not data mismatches of a predetermined size or more have occurred (step S33). If an inconsistency is detected in step S33, it is determined that a certain problem has occurred when switching from the first drawing data to the second drawing data (step S34), and the process moves to step S3 in FIG. 11. If no discrepancy is detected in step S33, the error processing in step S11 of FIG. 11 is performed.
圖16為圖15的處理之模型化示意圖。圖16的實線為第4描繪資料,虛線為第1描繪資料,×為圖11的步驟S9中被判定出的問題處。圖15之處理,只要讀出描繪圖樣當中於圖11的步驟S9中被判定有問題之處附近的第4描繪資料,並和相對應之第1描繪資料比較即可,因此不需進行描繪圖樣全體的第4描繪資料和第1描繪資 料之比較,因此能夠高速地檢查問題處。 FIG. 16 is a model diagram of the processing of FIG. 15. The solid line in FIG. 16 is the fourth drawing data, the dashed line is the first drawing data, and × is the problem area determined in step S9 of FIG. 11. In the processing of FIG. 15, it is only necessary to read out the fourth drawing data in the vicinity of the spot where the problem is determined in step S9 of FIG. 11 among the drawing patterns, and compare it with the corresponding first drawing data, so no drawing pattern is necessary. The entire fourth drawing data and first drawing data The comparison of materials makes it possible to check the problem at high speed.
如上述般,當將閾值相異的複數個第4描繪資料保存於第1描繪資料記憶部47的情形下,亦可將複數個第4描繪資料的各者和第1描繪資料比較來進行問題處之檢查。如此一來,便能更佳高精度地進行問題處之檢查。
As described above, when a plurality of fourth drawing data having different thresholds are stored in the first drawing
圖17為藉由第2手法進行圖11的步驟S5之情形之處理手續示意流程圖。首先,將以圖11的步驟S4生成的第3描繪資料依各像素值各者進行區域分割(區域分割部,步驟S41)。此處,所謂第3描繪資料的各像素值,係表示電子束的劑量。步驟S41中,將具有相同劑量的鄰接之像素範圍訂為一個分割區域。 FIG. 17 is a schematic flowchart of the processing procedure in the case where step S5 of FIG. 11 is performed by the second method. First, the third drawing data generated in step S4 of FIG. 11 is divided into regions for each pixel value (region division unit, step S41). Here, each pixel value of the third drawing data indicates the dose of the electron beam. In step S41, the adjacent pixel ranges having the same dose are defined as one divided area.
圖18A為第3描繪資料的一例示意圖,圖18B為將圖18A的第3描繪資料因應劑量而做區域分割之例示意圖。圖18B中,揭示設置劑量為「15」的1個分割區域、及劑量為「7」的3個分割區域、及劑量為「4」的1個分割區域之例子。 FIG. 18A is a schematic diagram of an example of the third drawing data, and FIG. 18B is a schematic diagram of an example of segmenting the third drawing data of FIG. 18A according to the dose. FIG. 18B discloses an example of setting one divided area with a dose of “15”, three divided areas with a dose of “7”, and one divided area with a dose of “4”.
接著,將藉由區域分割而得到的各分割區域內的第3描繪資料變換成向量資料亦即第4描繪資料(向量變換部,步驟S42)。圖19為將圖18B的各分割區域變換成由多邊形化的向量資料所構成之第4描繪資料之例示意圖。例如,分割區域d1,其劑量為「15」,因此被變換成包含「15」的值與多邊形資訊之第4描繪資料。生成的第4描繪資料,藉由圖11的步驟S6,被保存於第1
描繪資料記憶部47。
Next, the third drawing data in each divided area obtained by the area division is converted into vector data, that is, fourth drawing data (vector conversion section, step S42). FIG. 19 is a schematic diagram of an example of converting each divided region of FIG. 18B into fourth drawing data composed of polygonal vector data. For example, the divided area d1 has a dose of "15", so it is converted into fourth drawing data including the value of "15" and polygon information. The generated fourth drawing data is saved in the first by step S6 in FIG. 11
圖20為使用以圖17的第2手法生成的第4描繪資料來進行圖11的步驟S10的處理之情形之詳細處理手續示意流程圖。若圖11的步驟S9中判定描繪圖樣有問題,則將被判定有問題之處附近的第4描繪資料,自第1描繪資料記憶部47讀出(步驟S51)。 FIG. 20 is a schematic flowchart of a detailed processing procedure in a case where the processing of step S10 of FIG. 11 is performed using the fourth drawing data generated by the second method of FIG. 17. If it is determined in step S9 of FIG. 11 that there is a problem with the drawing pattern, the fourth drawing data in the vicinity of the problematic location is read from the first drawing data storage unit 47 (step S51).
接著,將步驟S51中讀出的第4描繪資料和第1描繪資料比較(步驟S52)。比較之結果,判定圖11的步驟S4之修正處理所做的修正是否過度(步驟S53)。若判定修正過度,則導出藉由圖11的步驟S4從第2描繪資料變換成第3描繪資料時有問題之結論(修正問題判斷部,步驟S54),進行圖11的步驟S11之錯誤處理。若判定步驟S53中修正並未過度,則移往圖11的步驟S4。 Next, the fourth drawing data read in step S51 and the first drawing data are compared (step S52). As a result of the comparison, it is determined whether the correction made by the correction process of step S4 of FIG. 11 is excessive (step S53). If it is determined that the correction is excessive, the conclusion that there is a problem when converting from the second drawing data to the third drawing data in step S4 of FIG. 11 is derived (correction problem determination unit, step S54), and the error processing in step S11 of FIG. 11 is performed. If it is determined that the correction is not excessive in step S53, the process moves to step S4 in FIG. 11.
圖21A及圖21B為圖20的處理之模型化說明圖。圖21的實線為第4描繪資料,虛線為第1描繪資料,×為圖11的步驟S9中被判定出的問題處。圖21A的問題處,為描繪圖樣的角部。圖21B的問題處,為描繪圖樣的端部。無論哪一情形,藉由再度重做圖11的步驟S4之修正處理,調整×附近的像素值,便能消弭問題。 21A and 21B are model explanatory diagrams of the processing of FIG. 20. The solid line in FIG. 21 is the fourth drawing data, the dashed line is the first drawing data, and × is the problem area determined in step S9 of FIG. 11. The problem in FIG. 21A is the corner of the drawing. The problem in FIG. 21B is the end of the drawing. In either case, by redoing the correction process in step S4 of FIG. 11 again and adjusting the pixel value around ×, the problem can be eliminated.
圖22為當發現了圖21A之問題時基於重做圖11的步驟S4的處理而生成之第3描繪資料,藉由圖20的處理而生成之第4描繪資料示意圖。將圖22的第4描繪資料和圖21A比較可知,描繪圖樣的角部之像素值受到 變更。如此一來,圖11的步驟S8及S9之外觀檢查中便會被判定為正常。 22 is a schematic diagram of the fourth drawing data generated by the processing of FIG. 20 based on the third drawing data generated by redoing the process of step S4 of FIG. 11 when the problem of FIG. 21A is found. Comparing the fourth drawing data of FIG. 22 with FIG. 21A, the pixel value of the corner of the drawing pattern is affected by change. As a result, the visual inspection of steps S8 and S9 in FIG. 11 will be determined to be normal.
圖20之處理,只要讀出於圖11的步驟S9中被判定有問題之處附近的第4描繪資料,並和相對應之第1描繪資料比較即可,因此不需進行描繪圖樣全體的第4描繪資料和第1描繪資料之比較,因此能夠高速地檢查問題處。 In the processing of FIG. 20, it is only necessary to read out the fourth drawing data near the point where the problem is determined in step S9 of FIG. 11 and compare it with the corresponding first drawing data, so there is no need to perform the first drawing of the entire drawing. 4. The comparison between the drawing data and the first drawing data enables the problem to be checked at high speed.
圖23為藉由第3手法進行圖11的步驟S5之情形之處理手續示意流程圖。首先,使用以圖11的步驟S4生成的第3描繪資料,進行將電子束的正向散射或背向散射納入考量之描繪模擬,取得蓄積劑量分布(蓄積劑量分布取得部,步驟S61)。所謂正向散射,係指電子束不僅目標照射位置,還照射至目標照射位置的周圍之散射現象。所謂背向散射,係指電子束的一部分貫通阻劑膜而在基底之基板反射,而照射至目標照射位置的周圍之散射現象。步驟S61中,藉由進行將正向散射或背向散射納入考量之描繪模擬,來取得照射至目標照射位置的周圍之電子束的劑量分布而作為蓄積劑量分布。 FIG. 23 is a schematic flowchart of the processing procedure in the case where step S5 of FIG. 11 is performed by the third method. First, using the third drawing data generated in step S4 of FIG. 11, a drawing simulation that takes the forward scattering or backscattering of the electron beam into consideration is performed, and the accumulated dose distribution is acquired (accumulated dose distribution acquisition section, step S61 ). The so-called forward scattering refers to the scattering phenomenon that the electron beam is irradiated not only on the target irradiation position but also around the target irradiation position. The so-called backscattering refers to a scattering phenomenon in which a part of the electron beam penetrates the resist film and is reflected on the base substrate, and is irradiated to the periphery of the target irradiation position. In step S61, by performing a drawing simulation that takes forward scattering or backscatter into consideration, the dose distribution of the electron beam irradiated to the target irradiation position is obtained as the accumulated dose distribution.
圖24A為第3描繪資料的一例示意圖,圖24B為使用圖24A的第3描繪資料進行描繪模擬而取得之蓄積劑量分布示意圖。蓄積劑量分布,其特性為愈遠離目標照射位置,則劑量愈減少。 FIG. 24A is a schematic diagram of an example of third drawing data, and FIG. 24B is a schematic diagram of an accumulated dose distribution obtained by performing a drawing simulation using the third drawing data of FIG. 24A. The characteristic of the accumulated dose distribution is that the farther away from the target irradiation position, the smaller the dose.
一旦以圖23的步驟S61取得蓄積劑量分布,接著,將蓄積劑量分布以任意閾值予以限制,而生成阻劑 圖樣像,並將此阻劑圖樣像變換成向量資料(蓄積劑量變換部,步驟S62)。接著,把將以步驟S62變換出的向量資料的頂點數予以減少而成之矩形資料保存於第1描繪資料記憶部而作為第4描繪資料(頂點數刪減部,步驟S63)。 Once the accumulated dose distribution is obtained in step S61 of FIG. 23, then, the accumulated dose distribution is limited to an arbitrary threshold to generate a resist Pattern image, and convert the resist pattern image into vector data (accumulated dose conversion unit, step S62). Next, the rectangular data obtained by reducing the number of vertices of the vector data converted in step S62 is stored in the first drawing data storage unit as the fourth drawing data (vertical number reduction unit, step S63).
圖25A及圖25B為圖23的步驟S62與S63的處理說明圖。圖24B所示之蓄積劑量分布當中,例如僅抽出具有閾值為5以上的劑量之像素,則會得到如圖25A般的向量資料。此向量資料的輪廓線,如圖25A所示般為曲線,具有多數個頂點資料。故,圖23的步驟S63中,將圖25A般具有曲線的輪廓線之向量資料,變換成圖25B般具有直線狀的輪廓線之矩形資料。如此一來,便得到由將頂點數減少而成之向量資料所構成之第4描繪資料。 25A and 25B are explanatory diagrams of the processes of steps S62 and S63 of FIG. 23. In the accumulated dose distribution shown in FIG. 24B, for example, only pixels with doses above a threshold of 5 are extracted, and vector data as shown in FIG. 25A is obtained. The outline of this vector data is a curve as shown in FIG. 25A, and it has many vertex data. Therefore, in step S63 of FIG. 23, the vector data having a contour line as shown in FIG. 25A is converted into rectangular data having a straight line contour as shown in FIG. 25B. In this way, the fourth drawing data composed of vector data obtained by reducing the number of vertices is obtained.
圖26為使用以圖23的第3手法生成的第4描繪資料來進行圖11的步驟S10的處理之情形之詳細處理手續示意流程圖。若圖11的步驟S9中判定描繪圖樣有問題,則將發現了問題之處附近的第4描繪資料,自第1描繪資料記憶部讀出(步驟S71)。 FIG. 26 is a schematic flowchart of a detailed processing procedure in a case where the processing of step S10 of FIG. 11 is performed using the fourth drawing data generated by the third method of FIG. 23. If it is determined in step S9 of FIG. 11 that there is a problem with the drawing pattern, the fourth drawing data near the point where the problem is found is read from the first drawing data storage unit (step S71).
接著,將步驟S71中讀出的第4描繪資料和第1描繪資料比較(比較部,步驟S72)。比較之結果,判定圖11的步驟S4之修正處理所做的修正是否過度(修正問題判斷部,步驟S73)。若判定修正過度,則導出藉由圖11的步驟S4從第2描繪資料變換成第3描繪資料時有問題之結論(步驟S74),進行圖11的步驟S11之錯 誤處理。若判定步驟S73中修正並未過度,則移往圖11的步驟S4。 Next, the fourth drawing data read in step S71 and the first drawing data are compared (comparator, step S72). As a result of the comparison, it is determined whether the correction made by the correction process of step S4 of FIG. 11 is excessive (correction problem determination unit, step S73). If it is determined that the correction is excessive, it is concluded that there is a problem when converting from the second drawing data to the third drawing data by step S4 of FIG. 11 (step S74), and the error of step S11 of FIG. 11 is performed Mishandling. If it is determined that the correction is not excessive in step S73, the process moves to step S4 in FIG. 11.
圖27為圖26的處理之模型化說明圖。圖27的實線為第4描繪資料,虛線為第1描繪資料,×為圖11的步驟S9中被判定出的問題處。第3手法中,是考量電子束的正向散射或背向散射來生成第4描繪資料,因此能夠提升第4描繪資料的精度,能夠高精度地檢查描繪圖樣的問題處。 FIG. 27 is a model explanatory diagram of the processing of FIG. 26. FIG. The solid line in FIG. 27 is the fourth drawing data, the dashed line is the first drawing data, and X is the problem area determined in step S9 of FIG. 11. In the third method, the forward drawing or backscattering of the electron beam is considered to generate the fourth drawing data. Therefore, the accuracy of the fourth drawing data can be improved, and the problem of drawing patterns can be checked with high accuracy.
第3描繪資料,一旦藉由圖11的步驟S7對描繪對象物將描繪圖樣予以描繪之處理結束後,便被刪除。惟,能夠使用被保存於第1描繪資料記憶部47之第4描繪資料,來對描繪對象物進行再描繪。再描繪,係當最初描繪的描繪對象物(例如光罩)於描繪後成為了不良之情形下、或當因顧客方的要求而委託製造複數個光罩之情形下會進行。需要再描繪之情形,例如為以下的1)、2)或3)這樣的情形。
The third drawing data is deleted once the process of drawing the drawing pattern on the drawing object in step S7 of FIG. 11 is completed. However, the fourth drawing data stored in the first drawing
1)當製造光罩作為描繪對象物13的情形下,會對光罩用底板(blanks)塗布電子線感光性阻劑,以電子線進行圖樣之描繪,其後藉由顯影與蝕刻將基板加工來製作光罩。製作出的光罩,藉由圖11的步驟S8,進行描繪圖樣之外觀檢查。若藉由外觀檢查得知描繪圖樣未能加工成期望的形狀,則會備妥新的光罩用底板,再度進行描繪。
1) When manufacturing a photomask as the
2)對塗布於光罩用底板上的感光性阻劑以電 子線描繪圖樣後予以顯影,若顯影後的圖樣發現不良,則將阻劑剝離,於同一底板上再次塗布感光性阻劑,再度描繪。 2) The photosensitive resist coated on the bottom After drawing the pattern, the sub-line is developed. If the developed pattern is found to be defective, the resist is peeled off, the photosensitive resist is coated again on the same base plate, and drawn again.
3)製作出光罩並出貨後,當因顧客方的要求等而有必須再度製作具有相同描繪圖樣之光罩的情形下,會以同一描繪條件對新的光罩用底板塗布電子線感光性阻劑,再度進行描繪。 3) After a photomask is produced and shipped, when it is necessary to remake a photomask with the same drawing pattern due to the customer's request, etc., the new photomask base plate will be coated with electronic wire sensitivity under the same drawing conditions Resist, and draw again.
另,再描繪時,有依照和以前完全相同的描繪圖樣來進行描繪之情形、及依照對以前的描繪圖樣施加了更正或修正的描繪圖樣來進行描繪之情形。 In addition, when redrawing, there may be a case where drawing is performed according to the same drawing pattern as before, and a case where drawing is performed according to a drawing pattern to which correction or correction is applied to the previous drawing pattern.
圖28為控制系統35的再描繪處理之一例示意流程圖,圖29為進行圖28的處理之控制系統35的內部構成示意方塊圖。圖29為對圖10構成中追加了第3圖像變換部52而成者。第3圖像變換部52,將被保存於第1描繪資料記憶部47之第4描繪資料變換成逐線形式的第5描繪資料。控制部41,基於第5描繪資料,控制多射束生成系統3、孔徑構件10、投影系統4及偏向器9a等,對描繪對象物將描繪圖樣予以再描繪。
FIG. 28 is a schematic flowchart of an example of the redraw process of the
圖28中,首先,讀出並取得被保存於第1描繪資料記憶部47之第4描繪資料(步驟S81)。接著,藉由第3圖像變換部52,將第4描繪資料變換成逐線形式的第5描繪資料(步驟S82)。接著,使用第5描繪資料,藉由控制部41對描繪對象物將描繪圖樣予以描繪(步驟S83)。
In FIG. 28, first, the fourth drawing data stored in the first drawing
圖30為控制系統35的處理手續之第2例示意流程圖,圖31為依第2例之控制系統35的方塊圖。第2例,為當判定出描繪圖樣有問題,且第2描繪資料之修正處理有問題的情形下,不重做第2描繪資料之修正處理,而是重新生成第4描繪資料。如圖31所示,依第2例之控制系統35,除圖10之構成外,還具有第1再生成部53、及第2再生成部54。第1再生成部53,若藉由修正問題判斷部51判斷出圖像修正部44之修正處理有問題,則將被保存於第1描繪資料記憶部47之第4描繪資料予以再生成。第2再生成部54,基於再生成之第4描繪資料,將逐線形式的第3描繪資料予以再生成。
FIG. 30 is a schematic flowchart of a second example of the processing procedure of the
圖30之步驟S91~S101和圖11之步驟S1~S11共通。步驟S100中若判定修正處理有問題,則讀出被保存於第1描繪資料記憶部47之第4描繪資料,藉由第1再生成部53進行再生成(步驟S102)。接著,基於再生成之第4描繪資料,藉由第2再生成部54將逐線形式的第3描繪資料予以再生成(步驟S103)。再生成的第3描繪資料,會被使用於描繪步驟S97的描繪圖樣,並且被用於步驟S95中變換成第4描繪資料。
Steps S91 to S101 in FIG. 30 are common to steps S1 to S11 in FIG. 11. If it is determined in step S100 that there is a problem with the correction process, the fourth drawing data stored in the first drawing
圖30的步驟S102及S103中的第4描繪資料及第3描繪資料之再生成處理,例如依以下方式進行。從第1描繪資料記憶部47讀出第4描繪資料,變換成逐線形式的第5描繪資料,對此第5描繪資料再度進行修正處理以便消弭圖11的步驟S10中發現之問題,而重新生成
第3描繪資料。此外,將重新生成的第3描繪資料,變換成向量資料而重新生成第4描繪資料並保存於第1描繪資料記憶部47。
The regeneration processing of the fourth drawing data and the third drawing data in steps S102 and S103 of FIG. 30 is performed as follows, for example. The fourth drawing data is read from the first drawing
像這樣,本實施形態中,將應描繪於描繪對象物13之向量形式的第1描繪資料,變換成逐線形式的第2描繪資料後,基於第2描繪資料,辨明描繪圖樣40的應進行修正之場所,並以像素單位進行修正處理,生成逐線形式的第3描繪資料。第3描繪資料,因資料量大,難以直接傳送至設計中心等來進行驗證。鑑此,本實施形態,是將第3描繪資料變換成向量形式的第4描繪資料,於減少了資料量之狀態下,記憶於第1描繪資料記憶部47。故,視必要能夠容易地進行從第1描繪資料記憶部47讀出第4描繪資料而驗證,能夠簡易且迅速地判斷修正處理是否確切。
In this way, in the present embodiment, after converting the first drawing data in the vector format to be drawn on the
本揭示之態樣,並非限定於上述各個實施形態,還包含所屬技術領域者可思及之種種變形,本揭示之效果並非限定於上述內容。也就是說,在不脫離申請專利範圍所規範之內容及由其均等物推導出之本揭示的概念性思想與要旨之範圍內可做種種追加、變更及部分刪除。 The aspect of the present disclosure is not limited to the above-mentioned embodiments, but also includes various modifications conceivable by those skilled in the art, and the effect of the present disclosure is not limited to the above content. In other words, various additions, changes, and partial deletions can be made within the scope of the conceptual ideas and gist of the disclosure that do not deviate from the content regulated by the scope of the patent application and the equivalents derived from them.
35‧‧‧控制系統 35‧‧‧Control system
41‧‧‧控制部 41‧‧‧Control Department
42‧‧‧取得部 42‧‧‧ Acquisition Department
43‧‧‧第1圖像變換部 43‧‧‧The first image conversion unit
44‧‧‧圖像修正部 44‧‧‧Image Correction Department
45‧‧‧第2圖像變換部 45‧‧‧The second image conversion unit
46‧‧‧第1記憶控制部 46‧‧‧ First Memory Control Department
47‧‧‧第1描繪資料記憶部 47‧‧‧The first drawing data memory department
48‧‧‧第2記憶控制部 48‧‧‧ 2nd Memory Control Department
49‧‧‧第2描繪資料記憶部 49‧‧‧ 2nd drawing data memory department
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JP6788839B2 (en) | 2020-11-25 |
TW201743140A (en) | 2017-12-16 |
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