TW201742206A - Method of fixing IHS and heat sink and electronic device applying thereof - Google Patents

Abstract

A method of fixing IHS and heat sink and an electronic device applying the fixing method is provided. A pre-coated layer is formed on the outside of the IHS facing the heat sink, or is formed on the bottom of the heat sink facing the IHS, then the pre-coated layer is heated by a local heater. When there is a stronger connection between the IHS and the heat sink, it can help the electronic device to discharge the heat generated by the wafer.

Description

Method for fixing integrated heat sink and heat sink and electricity using the same Sub-device

The present invention relates to a method of fixing an integrated heat sink and a heat sink, and an electronic component or device using the same.

Integrated heat spreader (IHS) is a component that fits or covers the outside of a wafer such as a central processing unit (CPU) or a graphics processing unit (GPU) to heat the wafer when it is operated at high temperature. It is transmitted to other heat sinks such as the Heat sink to provide auxiliary heat dissipation.

The first figure shows a conventional method for fixing an integrated heat sink and a heat sink and an electronic device to which the method is applied. The electronic device 10 includes a wafer 11, a substrate 12, an integrated heat sink 13 and a heat sink 14. The wafer 11 is disposed on the substrate 12 and electrically connected to the substrate 12 by means of an array of solder balls 15 or wire bonding. Sexual connection. The outer side of the wafer 11 is covered by an integrated heat sink 13 and a layer of thermally conductive medium 16 is applied between the two to aid in the transfer of heat. On the outer side or the top surface of the integrated heat sink 13, the heat sink 14 is connected.

In order to enable the heat sink 14 to fit the integrated heat sink 13 and to fix the two to prevent detachment, one of the conventional methods is to fix the heat sink 14 and the substrate 12 by screws 17a as shown in the first figure (or It is the heat sink 14 and the integrated heat sink 13) are locked together. But with electronics and yuan In the pursuit of thinness and shortness, this kind of need to retain the screw locking space around the heat sink 14 and the substrate 12 or the integrated heat sink 13 is gradually failing to meet the needs of the industry because the overall size cannot be reduced. .

Another conventional method of fixing the heat sink and the heat sink is to provide a conductive adhesive layer between the two. Referring to the second figure, the wafer 11 of the electronic device 10 is also disposed on the substrate 12, and electrically connected to the substrate 12 by means of array solder balls 15 or wire bonding. The outer side of the wafer 11 is also covered by the integrated heat sink 13, and a heat transfer medium 16 is applied between the two. The difference from the prior art is that before the integrated heat sink 13 and the heat sink 14 are attached, a thermal conductive adhesive layer is applied or attached on the outer side of the integrated heat sink 13 or the bottom surface of the heat sink 14 in advance. 17b, for example, a heat-conductive double-sided tape, so that the heat sink 14 and the integrated heat sink 13 can be directly fixed by the heat-conductive adhesive layer 17b, and also because the heat sink 14 does not need to reserve a locking area. And the overall size can be reduced.

However, when the integrated heat sink 13 is mated with the relatively large size or weight of the heat sink 14, if the two are only fixed by the heat conductive adhesive layer 17b, it is easy to be detached due to vibration or rotation, etc. This conventional method of fixing still has a lot of room for improvement in reliability.

In order to improve the above-mentioned defects caused by the prior art, the present invention provides an integrated device for fixing a heat sink and a heat sink, and an electronic device using the same, so that an electronic device equipped with an integrated heat sink and a heat sink can be operated. The heat generated at the time is reliably discharged by the aid of the integrated heat sink and the heat sink.

The method for fixing the integrated heat sink and the heat sink proposed by the present invention is The outer side of the integrated heat sink (top surface facing the heat sink), or the bottom surface of the heat sink facing the integrated heat sink, pre-formed with pre-plated layer and heated by locally heated equipment such as infrared or laser to allow integrated heat dissipation After a more secure bond between the piece and the heat sink, it helps to dissipate the heat generated by the wafer within the electronic device.

In order to achieve the above object, in one embodiment, the present invention provides a method for fixing an integrated heat sink and a heat sink, comprising providing a heat sink; providing an integrated heat spreader, and integrating the heat sink facing the heat sink A pre-plated layer is formed on the outside; the heat sink and the integrated heat sink are aligned; and the pre-plated layer is heated by a local heating device to combine the heat sink with the integrated heat sink.

In another embodiment, the present invention provides a method for fixing an integrated heat sink and a heat sink, comprising: providing an integrated heat spreader; providing a heat sink and forming a heat sink on the bottom surface of the heat sink facing the integrated heat sink Pre-plated; aligns the integrated heat sink with the heat sink; and heats the pre-plated layer with a local heating device to bond the integrated heat sink to the heat sink.

In the above two embodiments, the local heating device may be selected from one of the following: an infrared heating device and a laser heating device.

In the above two embodiments, the material of the pre-plating layer may be selected from at least one of the following metals: gold (Au), copper (Cu), nickel (Ni), indium (In), tin (Sn), lead (Pb), Silver (Ag), bismuth (Sb), bismuth (Bi), zinc (Zn), cadmium (Cd), ruthenium (Ru), cobalt (Co), chromium (Cr), iron (Fe), manganese (Mn), Titanium (Ti), aluminum (Al), hafnium (Hf), tantalum (Ta), tungsten (W), vanadium (V), molybdenum (Mo), palladium (Pd) and platinum (Pt).

In still another embodiment, the present invention provides an electronic device including a substrate; a wafer disposed on the substrate; and an integrated heat sink covering the wafer and connected to the substrate; A heat sink is connected to the integrated heat sink; and a pre-plated layer is disposed between the integrated heat sink and the heat sink to be heated to connect the integrated heat sink and the heat sink.

In the above embodiments, a heat transfer medium connecting chip and an integrated heat sink are further included.

In the above embodiment, a positioning structure is further disposed on the integrated heat sink and the heat sink to help integrate the heat sink to align the heat sink.

In the above embodiment, the positioning structure includes a recessed portion and a protruding portion, which may be formed on the integrated heat sink and the heat sink, or formed on the heat sink and the integrated heat sink.

In the above embodiments, the material of the pre-plating layer may be selected from at least one of the following metals: gold (Au), copper (Cu), nickel (Ni), indium (In), tin (Sn), lead (Pb), silver. (Ag), bismuth (Sb), bismuth (Bi), zinc (Zn), cadmium (Cd), ruthenium (Ru), cobalt (Co), chromium (Cr), iron (Fe), manganese (Mn), titanium (Ti), aluminum (Al), hafnium (Hf), tantalum (Ta), tungsten (W), vanadium (V), molybdenum (Mo), palladium (Pd), and platinum (Pt).

In another embodiment, the present invention provides an integrated heat sink having a heat sink, including an integrated heat sink, a heat sink connected to the integrated heat sink, and a pre-plated layer disposed between the integrated heat sink and the heat sink. Used to be heated to connect the integrated heat sink to the heat sink.

In the above embodiment, a positioning structure is further disposed on the integrated heat sink and the heat sink to help integrate the heat sink to align the heat sink.

In the above embodiment, the positioning structure includes a recessed portion and a protruding portion, which may be formed on the integrated heat sink and the heat sink, or formed on the heat sink and the integrated heat sink.

In the above embodiments, the material of the pre-plating layer may be selected from at least one of the following metals: Gold (Au), copper (Cu), nickel (Ni), indium (In), tin (Sn), lead (Pb), silver (Ag), antimony (Sb), antimony (Bi), zinc (Zn), Cadmium (Cd), ruthenium (Ru), cobalt (Co), chromium (Cr), iron (Fe), manganese (Mn), titanium (Ti), aluminum (Al), hafnium (Hf), tantalum (Ta), Tungsten (W), vanadium (V), molybdenum (Mo), palladium (Pd) and platinum (Pt).

10‧‧‧Electronic devices

11‧‧‧ wafer

12‧‧‧Substrate

13‧‧‧Integrated heat sink

13a‧‧‧Depression

14‧‧‧ radiator

14a‧‧‧Protruding

15‧‧‧Array of solder balls

16‧‧‧ Thermal medium

17a‧‧‧screw

17b‧‧‧ Thermal adhesive layer

17c‧‧‧Pre-plated

18‧‧‧heating equipment

FIG. 1 is a conventional method and structure for fixing an integrated heat sink and a heat sink.

FIG. 2 is a conventional method and structure for fixing an integrated heat sink and a heat sink.

3A to 3C show the design of a fixed integrated heat sink and a heat sink provided by the first embodiment of the present invention.

4A to 4C illustrate a design of a fixed integrated heat sink and a heat sink provided by a second embodiment of the present invention.

FIG. 5 is a positioning mechanism formed on the integrated heat sink and the heat sink provided by the present invention.

3A to 3C show a first embodiment of the present invention. The electronic device 10 includes a wafer 11 , a substrate 12 , an integrated heat spreader 13 , and a heat sink 14 . The wafer 11 is disposed on a substrate and is supported by an array of solder balls 15 or Electrical connection is made to the substrate 12 by wire bonding or the like. The integrated heat sink 13 covers the outside of the wafer 11 and is coupled to the substrate 12 for transferring heat generated by the operation of the wafer 11 to the heat sink 14. The method for fixing the integrated heat sink 13 and the heat sink 14 is as shown in FIG. 3A. After the integrated heat sink 13 and the wafer 11 are assembled and connected, the integrated heat sink 13 faces the heat sink 14 . The outer side (or top surface) forms a pre-plated layer 17c, and then, as shown in FIG. 3B and FIG. 3C, the heat sink 13 and the heat sink are integrated by positioning of a jig or other auxiliary means (not shown). 14 is aligned, and the pre-plated layer 17c is heated by a heating device 18 capable of localized heating such as infrared rays or laser light, so that the integrated heat sink 13 can be firmly bonded to the heat sink 14 to prevent the two from being detached.

The electronic device 10 provided in this embodiment, wherein the method of fixing the heat sink 13 and the heat sink 14 is fixed, a pre-plating layer 17c is formed on the outer side (or the top surface) of the integrated heat sink 13 in advance, but not limited thereto. In other embodiments, the pre-plated layer 17c may be formed in advance on the bottom surface of the heat sink 14, that is, the surface facing the integrated heat sink 13 and intended to be connected thereto.

In addition, the present embodiment provides a design for forming a pre-plated layer 17c on the integrated heat sink 13 or the heat sink 14, optionally when the integrated heat sink 13 or the heat sink 14 is manufactured, that is, in a specific position, for example, the heat sink 13 is integrated. The top surface (which is expected to be bonded to the heat sink) or the bottom surface of the heat sink 14 (which is expected to be bonded to the integrated heat sink) is preliminarily formed with the pre-plated layer 17c and then shipped directly to the finished product. Thereafter, the wafer assembler can directly fix the heat sink 14 by using the integrated heat sink 13 provided with the pre-plated layer 17c, or fix the heat sink 14 provided with the pre-plated layer 17c to the integrated heat sink 13, thereby eliminating the formation of the heat sink 13. The process of pre-plating 17c and the corresponding equipment.

The pre-plated layer 17c used in the present invention can select an appropriate metal alloy material by integrating the materials of the heat sink 13 and the heat sink 14. The material composition of the metal alloy can be selected from gold (Au), copper (Cu), and nickel (Ni). , indium (In), tin (Sn), lead (Pb), silver (Ag), antimony (Sb), antimony (Bi), zinc (Zn), cadmium (Cd), antimony (Ru), cobalt (Co) , chromium (Cr), iron (Fe), manganese (Mn), titanium (Ti), aluminum (Al), hafnium (Hf), tantalum (Ta), tungsten (W), vanadium (V), molybdenum (Mo) , palladium (Pd), platinum (Pt) or a combination thereof.

4A to 4C illustrate a second embodiment provided by the present invention. The electronic device 10 includes a crystal 11 chip, a substrate 12, an integrated heat sink 13 and a heat sink 14. Unlike the first embodiment, the embodiment can be previously faced with the integrated heat sink 13 as shown in FIG. 4A. Outside the radiator 14 After forming a pre-plated layer 17c on the side (or top surface), the integrated heat sink 13 is aligned with the heat sink 14 by positioning of a fixture or other auxiliary means (not shown), and as shown in FIG. 4B, infrared rays are used. The preheating layer 17c is heated by a heating device 18 such as a laser that can perform local heating, so that the integrated heat sink 13 and the heat sink 14 are firmly bonded together first. Thereafter, as shown in FIG. 4C, the integrated heat sink 13 is overlaid on the wafer 11 and bonded to the substrate 12 to form an electronic device.

In the electronic device 10 provided in this embodiment, the method of fixing the heat dissipating component 13 and the heat sink 14 is such that a pre-plating layer 17c is formed on the outer side (or the top surface) of the integrated heat sink 13 in advance, but this is not Alternatively, in other embodiments, the pre-plated layer 17c may be formed in advance on the bottom surface of the heat sink 14, that is, the surface facing the integrated heat sink 13 and intended to be bonded thereto.

In addition, the design of the embodiment in which the integrated heat sink 13 and the heat sink 14 are fixed together by the pre-plating layer 17c and the local heating means in advance does not limit the procedure to be fixed before being assembled to the wafer 11. The invention can also be used to fix and assemble the integrated heat sink 13 and the heat sink 14 in advance, and then ship the product in a finished product, so that the wafer assembler can directly take it together with the wafer 11 and save it. The process of forming the pre-plated layer and the corresponding equipment.

FIG. 5 shows a positioning mechanism formed on the integrated heat sink 13 and the heat sink 14 provided by the present invention. As mentioned in the foregoing first and second embodiments, the integrated heat sink 13 and the heat sink 14 can be aligned with the heat sink 14 by positioning of a jig or other auxiliary means for the purpose of ensuring Both do not cause misalignment or displacement when performing local heating. In the integrated heat sink 13 or the heat sink 14 itself, as shown in FIG. 5, in the mutually joined regions, a positioning structure including the protruding portion 14a and the recessed portion 13a is formed correspondingly, or vice versa in the integrated heat sink 13 or The heat sink 14 is formed with recesses and protrusions, so that the structure is reliably positioned to help the integrated heat sink 13 align with the heat sink 14 to make the process of the fixed joint smoother.

10‧‧‧Electronic devices

11‧‧‧ wafer

12‧‧‧Substrate

13‧‧‧Integrated heat sink

14‧‧‧ radiator

15‧‧‧Array of solder balls

16‧‧‧ Thermal medium

17c‧‧‧Pre-plated

Claims (13)

A method for fixing an integrated heat sink and a heat sink, comprising: providing a heat sink; providing an integrated heat spreader, and forming a pre-plated layer on the outer side of the heat sink facing the heat sink; aligning the heat sink And the integrated heat sink; and heating the pre-plated layer by a local heating device to bond the heat sink with the integrated heat sink. A method for fixing an integrated heat sink and a heat sink includes: providing an integrated heat spreader; providing a heat sink, and forming a pre-plated layer on the bottom surface of the heat sink facing the heat sink; aligning the integrated heat sink And the heat sink; and heating the pre-plated layer by a local heating device to bond the integrated heat sink to the heat sink. According to the fixing method of claim 1 or 2, the local heating device may be selected from one of the following: an infrared heating device and a laser heating device. According to the fixing method of the scope of claims 1-3, the material of the pre-plating layer may be selected from at least one of the following metals: gold (Au), copper (Cu), nickel (Ni), indium (In), tin (Sn) ), lead (Pb), silver (Ag), antimony (Sb), antimony (Bi), zinc (Zn), cadmium (Cd), antimony (Ru), cobalt (Co), chromium (Cr), iron (Fe) ), manganese (Mn), titanium (Ti), aluminum (Al), hafnium (Hf), tantalum (Ta), tungsten (W), vanadium (V), molybdenum (Mo), palladium (Pd) and platinum (Pt ). An electronic device comprising: a substrate; a wafer disposed on the substrate; an integrated heat sink covering the wafer and connected to the substrate; a heat sink connecting the integrated heat sink; and a pre-plating layer disposed on the integrated heat sink The heat sink is connected between the heat sink and the integrated heat sink and the heat sink. The electronic device according to claim 5, further comprising a heat conducting medium connecting the wafer and the integrated heat sink. The electronic device according to claim 5, further comprising a positioning structure correspondingly disposed on the integrated heat sink and the heat sink to help the integrated heat sink to align the heat sink. The electronic device of claim 7, wherein the positioning structure comprises a recessed portion and a protruding portion, which are formed on the integrated heat sink and the heat sink, or are formed corresponding to the heat sink and the integrated heat sink. On the piece. The electronic device according to claim 5-8, wherein the material of the pre-plating layer may be selected from at least one of the following metals: gold (Au), copper (Cu), nickel (Ni), indium (In), tin ( Sn), lead (Pb), silver (Ag), bismuth (Sb), bismuth (Bi), zinc (Zn), cadmium (Cd), ruthenium (Ru), cobalt (Co), chromium (Cr), iron ( Fe), manganese (Mn), titanium (Ti), aluminum (Al), hafnium (Hf), tantalum (Ta), tungsten (W), vanadium (V), molybdenum (Mo), palladium (Pd) and platinum ( Pt). An integrated heat sink having a heat sink includes: an integrated heat sink; a heat sink connected to the integrated heat sink; and a pre-plated layer disposed between the integrated heat sink and the heat sink for being heated and connected The integrated heat sink is with the heat sink. The integrated heat sink with a heat sink according to claim 10 of the patent application further includes a positioning structure correspondingly disposed on the integrated heat sink and the heat sink to help the integrated heat sink to align the heat sink. The integrated heat sink having a heat sink according to claim 11 , wherein the positioning structure comprises a recessed portion and a protruding portion, which may be formed on the integrated heat sink and the heat sink, or correspondingly formed on the heat sink With the integrated heat sink on it. An integrated heat sink having a heat sink according to claim 10-12, wherein the material of the pre-plated layer may be selected from at least one of the following metals: gold (Au), copper (Cu), nickel (Ni), indium ( In), tin (Sn), lead (Pb), silver (Ag), bismuth (Sb), bismuth (Bi), zinc (Zn), cadmium (Cd), ruthenium (Ru), cobalt (Co), chromium ( Cr), iron (Fe), manganese (Mn), titanium (Ti), aluminum (Al), hafnium (Hf), tantalum (Ta), tungsten (W), vanadium (V), molybdenum (Mo), palladium ( Pd) with platinum (Pt).