TW201741756A - Image pickup apparatus and image management system capable of acquiring a captured image with higher contrast under low illuminance conditions such as nighttime - Google Patents

Image pickup apparatus and image management system capable of acquiring a captured image with higher contrast under low illuminance conditions such as nighttime Download PDF

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TW201741756A
TW201741756A TW106105573A TW106105573A TW201741756A TW 201741756 A TW201741756 A TW 201741756A TW 106105573 A TW106105573 A TW 106105573A TW 106105573 A TW106105573 A TW 106105573A TW 201741756 A TW201741756 A TW 201741756A
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light
image sensor
image
filter
target area
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TW106105573A
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TWI628501B (en
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児玉宏達
上村剛博
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三星鑽石工業股份有限公司
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    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/56Cameras or camera modules comprising electronic image sensors; Control thereof provided with illuminating means
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50Constructional details
    • H04N23/54Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50Constructional details
    • H04N23/55Optical parts specially adapted for electronic image sensors; Mounting thereof
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70Circuitry for compensating brightness variation in the scene
    • H04N23/74Circuitry for compensating brightness variation in the scene by influencing the scene brightness using illuminating means
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70Circuitry for compensating brightness variation in the scene
    • H04N23/75Circuitry for compensating brightness variation in the scene by influencing optical camera components
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N7/00Television systems
    • H04N7/18Closed-circuit television [CCTV] systems, i.e. systems in which the video signal is not broadcast
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21YINDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00Light-generating elements of semiconductor light sources
    • F21Y2115/10Light-emitting diodes [LED]

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Studio Devices (AREA)
  • Closed-Circuit Television Systems (AREA)
  • Alarm Systems (AREA)
  • Traffic Control Systems (AREA)

Abstract

This invention provides an image pickup apparatus and an image management system capable of acquiring a captured image with higher contrast under low illuminance conditions such as nighttime. An image pickup apparatus 1 includes an image sensor 40, a lens 10 for forming image by light from a target area on the image sensor 40, and an illumination light source for illuminating a target area. The illumination light source includes a plurality of types of light emitting diodes 101 in which the peak wavelengths of emission intensity peaks are different from each other and each peak wavelength is included in the infrared wavelength band.

Description

攝影裝置及影像管理系統 Photography device and image management system

本發明係關於一種對目標區域進行拍攝之攝影裝置及具備其之影像管理系統,尤其適合於在夜間等照度(illuminance)較低之狀況下對目標區域進行拍攝時使用。 The present invention relates to a photographing apparatus for photographing a target area and an image management system therewith, which is particularly suitable for use in photographing a target area in a situation where nighttime illuminance is low.

已知有對街道或十字路口等之狀況進行拍攝之監視用之攝影裝置。於此種攝影裝置中,所拍攝之影像例如被用於交通事故之驗證等。於驗證中確認車輛及步行者之狀況或信號機之點亮狀況等。攝影裝置不僅於白天,於日落後之夜間亦對目標區域進行拍攝。 There is known a photographing device for monitoring the shooting of a street or an intersection. In such a photographing apparatus, the photographed image is used, for example, for verification of a traffic accident or the like. In the verification, the condition of the vehicle and the pedestrian or the lighting condition of the signal is confirmed. The photographing device photographs the target area not only during the day but also during the night after sunset.

於以下之專利文獻1中揭示有具備紅外光之LED照明之攝影裝置。攝影裝置當照度感測器判斷監視區域較暗時,使紅外光LED點亮,將紅外光照射至監視區域。又,於專利文獻1中記載有於偵測到入侵者之情形時,使可見光LED亮滅而給予入侵者威懾效果之構成。 Patent Document 1 below discloses an imaging device having LED illumination with infrared light. When the illuminance sensor judges that the monitoring area is dark, the illuminating sensor lights the infrared light LED to illuminate the monitoring area. Further, Patent Document 1 discloses a configuration in which a visible light LED is turned off to give an intruder a deterrent effect when an intruder is detected.

[先前技術文獻] [Previous Technical Literature]

[專利文獻] [Patent Literature]

[專利文獻1]日本特開2009-17185號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2009-17185

為了更有效地監視目標區域之狀況,攝影裝置較佳為於夜間等照度較低之狀況下,可儘可能地以較高之對比度取得攝影影像。於上述專利文獻1中揭示有於偵測到入侵者之情形時使可見光LED亮滅,而給予入侵者威懾效果之構成,但並未揭示用以於照度較低之狀況下以較高之對比度取得攝影影像之構成。 In order to monitor the condition of the target area more effectively, it is preferable that the photographing apparatus obtains the photographed image with a high contrast as much as possible in the case where the illumination is low at night. In the above Patent Document 1, it is disclosed that the visible light LED is turned off when the intruder is detected, and the intruder is given a deterrent effect, but the higher contrast is not disclosed for the case where the illumination is low. Acquire the composition of the photographic image.

有鑒於該課題,本發明之目的在於提供一種於夜間等照度較低之狀況下,可以相對較高之對比度取得攝影影像之攝影裝置及具備其之影像管理系統。 In view of the above problems, an object of the present invention is to provide an image pickup apparatus capable of obtaining a photographic image with a relatively high contrast ratio in a situation where the illuminance at night is low, and an image management system including the same.

本發明之第1態樣係關於一種攝影裝置。本態樣之攝影裝置,具備影像感測器、使來自目標區域之光於上述影像感測器成像之透鏡、及對上述目標區域進行照明之照明光源。上述照明光源,具備發光強度為波峰之波峰波長彼此不同且各個波峰波長包含於紅外之波長頻帶之複數種發光二極體(light-emitting diode)。 A first aspect of the invention relates to a photographing apparatus. The photographing apparatus of the present aspect includes an image sensor, a lens that images light from the target area on the image sensor, and an illumination source that illuminates the target area. The illumination light source includes a plurality of light-emitting diodes having an emission intensity such that peak wavelengths of the peaks are different from each other and respective peak wavelengths are included in the infrared wavelength band.

根據本態樣之攝影裝置,波長頻帶不同之數種光照射至目標區域。因此,可將較寬之波長區域之紅外光照射至具有紅外線區域中之物質固有之光譜反射率(spectral reflectivity)特性之各種被拍攝體。因此,即便於夜間等照度較低之狀況下,藉由自照明光源將光照射至目標區域,亦可以相對較高之對比度取得攝影影像。 According to the photographing apparatus of the present aspect, several kinds of light having different wavelength bands are irradiated to the target area. Therefore, infrared light of a wide wavelength region can be irradiated to various subjects having spectral reflectivity characteristics inherent to the substance in the infrared region. Therefore, even in the case where the illumination is low at night, the photographic image can be obtained with a relatively high contrast by irradiating the light to the target region from the illumination source.

於本態樣之攝影裝置中,較佳為上述複數個發光二極體,分 別係以峰值之5%之發光強度的短波長側之波長為可見光頻帶之上限以上之方式設定發光光譜。若如此,則即便發光光譜之裙部之部分達到可見光頻帶之上限,該部分之光之強度亦大致為零或極其微弱。因此,即便於夜間等照度較低之狀況下點亮發光二極體,亦幾乎不會發生位於目標區域之人發現來自發光二極體之光的情況。因此,即便於將攝影裝置用於監視目的之情形時,亦可防止因發光二極體之點亮而導致人感知到此處存在攝影裝置。 In the photographic apparatus of the present aspect, preferably the plurality of light-emitting diodes are divided into The luminescence spectrum is set such that the wavelength on the short wavelength side of the 5% of the luminescence intensity of the peak is equal to or higher than the upper limit of the visible light band. If so, even if the portion of the skirt of the luminescence spectrum reaches the upper limit of the visible light band, the intensity of the portion of the light is substantially zero or extremely weak. Therefore, even if the light-emitting diode is lit in a situation where the illumination is low at night, there is almost no case where a person located in the target area finds light from the light-emitting diode. Therefore, even when the photographing apparatus is used for the purpose of monitoring, it is possible to prevent the person from perceiving the presence of the photographing apparatus due to the lighting of the light-emitting diode.

於本態樣之攝影裝置中,較佳為上述影像感測器為P型矽基板之CMOS影像感測器。若如此,則與影像感測器為N型矽基板之CMOS影像感測器之情形時相比,於影像感測器之光譜靈敏度特性(spectral sensitivity characteristics)之方面,可提高紅外頻帶之靈敏度(感度)。藉此,可更有效地提高影像感測器對來自複數個發光二極體之紅外光之靈敏度,結果可延長發光二極體點亮之情形時之攝影裝置之攝影距離。 In the photographic device of the present aspect, preferably, the image sensor is a CMOS image sensor of a P-type 矽 substrate. If so, the sensitivity of the infrared band can be improved in terms of the spectral sensitivity characteristics of the image sensor compared to the case where the image sensor is a CMOS image sensor of an N-type 矽 substrate ( Sensitivity). Thereby, the sensitivity of the image sensor to the infrared light from the plurality of light-emitting diodes can be more effectively improved, and as a result, the photographing distance of the photographing device when the light-emitting diode is lit can be prolonged.

於本態樣之攝影裝置中,較佳為上述影像感測器為可生成彩色影像之彩色影像感測器。若如此,則於白天等照度較高之狀況下,可以彩色影像對目標區域進行拍攝,於夜間等照度較低之狀況下,可使用來自發光二極體之紅外光以黑白影像對目標區域進行拍攝。 In the photographic device of the present aspect, preferably, the image sensor is a color image sensor capable of generating a color image. If this is the case, the target area can be captured by a color image in a situation where the illumination is high during the daytime, and the infrared light from the light-emitting diode can be used to perform the black-and-white image on the target area in a situation where the illumination is low at night. Shooting.

於該情形時,本態樣之攝影裝置可設為具備如下之構成:檢測器,其對目標區域之照度進行檢測;濾波器,其將紅外光去除;及切換機構,其使上述濾波器相對被上述透鏡擷取至上述影像感測器之光之光路插拔。於該情形時,攝影裝置於藉由上述檢測器檢測出之上述照度未達既定之閾值之情形時,使上述濾波器自上述光路退避,並且使上述發光二極 體點亮;於藉由上述檢測器檢測出之上述照度為上述閾值以上之情形時,將上述濾波器插入至上述光路,並且使上述發光二極體熄滅。若如此,則於白天等照度較高之狀況下,可以去除紅外光之影響後之高品質的彩色影像對目標區域進行拍攝,於夜間等照度較低之狀況下,可使用來自發光二極體之紅外光以黑白影像對目標區域進行拍攝。 In this case, the photographing apparatus of the present aspect may be configured to have a configuration that detects an illuminance of a target area, a filter that removes infrared light, and a switching mechanism that causes the filter to be relatively The lens is inserted into and removed from the optical path of the image sensor. In this case, when the illuminance detected by the detector does not reach a predetermined threshold, the imaging device retracts the filter from the optical path and causes the illuminating diode When the illuminance detected by the detector is equal to or greater than the threshold value, the filter is inserted into the optical path, and the light-emitting diode is turned off. In this case, the high-quality color image after the influence of the infrared light can be removed to capture the target area in the case where the illumination is high during the daytime, and the light-emitting diode can be used in the case where the illumination is low at night. The infrared light captures the target area in black and white.

本發明之第2態樣係關於一種影像管理系統。該態樣之影像管理系統具備第1態樣之攝影裝置、及藉由通訊自上述攝影裝置取得以上述攝影裝置拍得之攝影影像之外部裝置。 A second aspect of the invention relates to an image management system. The image management system of this aspect includes a first aspect of the photographing device and an external device that acquires the photographed image captured by the photographing device from the photographing device by communication.

根據本態樣之影像管理系統,可實現與藉由上述第1態樣之攝影裝置所帶來之效果相同之效果。 According to the image management system of the present aspect, the same effects as those of the image pickup apparatus according to the first aspect described above can be achieved.

如上所述,根據本發明,可提供一種於夜間等照度較低之狀況下,可以相對較高之對比度取得攝影影像的攝影裝置及具備其之影像管理系統。 As described above, according to the present invention, it is possible to provide an image pickup apparatus capable of obtaining a photographic image with a relatively high contrast ratio in a situation where the illuminance at night is low, and an image management system including the same.

本發明之效果及意義應可藉由以下所示之實施形態之說明而更加明確。但是,以下所示之實施形態只不過是實施本發明時之一個例示,本發明並不受以下之實施形態所記載之內容任何限定。 The effects and significance of the present invention will be more apparent from the following description of embodiments. However, the embodiments described below are merely illustrative of the embodiments of the present invention, and the present invention is not limited to the contents described in the following embodiments.

1‧‧‧攝影裝置 1‧‧‧Photographing device

10‧‧‧透鏡 10‧‧‧ lens

40‧‧‧影像感測器 40‧‧‧Image Sensor

50‧‧‧濾波器 50‧‧‧ filter

51‧‧‧切換機構 51‧‧‧Switching mechanism

101‧‧‧發光二極體(照明光源) 101‧‧‧Lighting diode (light source)

102‧‧‧照度感測器(檢測器) 102‧‧‧illuminance sensor (detector)

圖1(a)係顯示實施形態之影像管理系統之外觀構成之圖。圖1(b)係顯示實施形態之攝影影像之一例之圖。圖1(c)係示意性地顯示實施形 態之影像記錄裝置之鏡筒前側之構成之圖。 Fig. 1(a) is a view showing the appearance of the image management system of the embodiment. Fig. 1(b) is a view showing an example of a photographic image of the embodiment. Figure 1 (c) is a schematic representation of the implementation A diagram of the configuration of the front side of the lens barrel of the image recording apparatus.

圖2係顯示實施形態之攝影裝置之構成之圖。 Fig. 2 is a view showing the configuration of a photographing apparatus of the embodiment.

圖3係顯示實施形態之CMOS影像感測器之構成之圖。 Fig. 3 is a view showing the configuration of a CMOS image sensor of the embodiment.

圖4(a)~(c)係對實施形態之CMOS影像感測器之讀取控制進行說明之圖。 4(a) to 4(c) are diagrams for explaining read control of the CMOS image sensor of the embodiment.

圖5(a)、(b)係示意性地顯示實施形態之切換機構之構成之圖。 5(a) and 5(b) are diagrams schematically showing the configuration of a switching mechanism of the embodiment.

圖6係顯示實施形態之濾波器與發光二極體之控制之流程圖。 Fig. 6 is a flow chart showing the control of the filter and the light-emitting diode of the embodiment.

圖7(a)係顯示比較例及實施例1之影像感測器之光譜靈敏度特性之圖。圖7(b)係顯示配置於實施例1之影像感測器之彩色濾光片之光譜透射率特性之圖。圖7(c)係顯示用以去除實施例1之紅外光之濾波器之光譜透射率特性之圖。圖7(d)係顯示實施例1之發光二極體之發光光譜之圖。 Fig. 7(a) is a view showing the spectral sensitivity characteristics of the image sensor of the comparative example and the first embodiment. Fig. 7(b) is a view showing the spectral transmittance characteristics of the color filters disposed in the image sensor of the first embodiment. Fig. 7(c) is a view showing the spectral transmittance characteristics of the filter for removing the infrared light of the first embodiment. Fig. 7 (d) is a view showing the luminescence spectrum of the light-emitting diode of Example 1.

圖8係顯示實施例1之發光二極體之發光光譜之設定方法之圖。 Fig. 8 is a view showing a method of setting an emission spectrum of the light-emitting diode of the first embodiment.

圖9係顯示實施例2之發光二極體之發光光譜之設定方法之圖。 Fig. 9 is a view showing a method of setting an emission spectrum of the light-emitting diode of the second embodiment.

圖10係顯示變更例之濾波器與發光二極體之控制之流程圖。 Fig. 10 is a flow chart showing the control of the filter and the light-emitting diode of the modified example.

以下,參照圖式對本發明之實施形態進行說明。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.

圖1(a)係顯示實施形態之影像管理系統之外觀構成之圖。 Fig. 1(a) is a view showing the appearance of the image management system of the embodiment.

如圖1(a)所示,影像管理系統具備攝影裝置1與外部裝置2。攝影裝置1為監視攝影機,設置於可對包含信號機之街道或十字路口等進行拍攝之被設置物3。被設置物3例如為建築物等之外壁或屋頂之構造 物、電線桿等。攝影裝置1將所拍攝到之影像隨時記錄於內部之記錄媒體。外部裝置2為可攜式個人電腦。此外,外部裝置2亦可為行動電話機、輸入板等其他可攜式資訊終端。 As shown in FIG. 1(a), the image management system includes a photographing device 1 and an external device 2. The photographing device 1 is a monitor camera, and is provided in an object 3 that can image a street or an intersection including a signal. The object to be set 3 is, for example, a wall or a roof structure of a building or the like. Things, utility poles, etc. The photographing device 1 records the captured image at any time on the internal recording medium. The external device 2 is a portable personal computer. In addition, the external device 2 can also be other portable information terminals such as a mobile phone and an input board.

記錄於攝影裝置1之影像適當被外部裝置2回收。攝影裝置1與外部裝置2,可藉由無線LAN進行通訊。外部裝置2確立基於無線LAN之通訊路徑,並自攝影裝置1下載影像。攝影裝置1與外部裝置2之間之通訊並不限定於無線LAN,亦可為Bluetooth(註冊商標)(藍芽)等其他通訊方式。 The image recorded on the photographing device 1 is appropriately collected by the external device 2. The photographing device 1 and the external device 2 can communicate via a wireless LAN. The external device 2 establishes a communication path based on the wireless LAN, and downloads an image from the photographing device 1. The communication between the photographing device 1 and the external device 2 is not limited to the wireless LAN, and may be other communication methods such as Bluetooth (registered trademark) (Bluetooth).

圖1(b)係顯示藉由攝影裝置1拍攝之攝影影像之一例之圖。此處,將包含信號機4之十字路口5設定為目標區域。為方便起見,於圖1(b)中僅圖示出朝向攝影裝置1之方向之信號機4。藉由攝影裝置1拍攝得之影像被回收至外部裝置2後,例如被用於交通事故之驗證等。於該驗證中,確認經過十字路口5之車輛或步行者之狀況、以及信號機4之點亮狀況。即,確認於事故時信號機4係以紅色、藍色、黃色中之哪一顏色點亮。 Fig. 1(b) is a view showing an example of a photographic image taken by the photographing apparatus 1. Here, the intersection 5 including the traffic signal 4 is set as the target area. For the sake of convenience, only the signal 4 facing the direction of the photographing device 1 is illustrated in Fig. 1(b). The image captured by the photographing device 1 is recovered to the external device 2, and is used, for example, for verification of a traffic accident. In this verification, the status of the vehicle or pedestrian passing through the intersection 5 and the lighting condition of the signal unit 4 are confirmed. In other words, it is confirmed that the traffic signal 4 is lit in any of red, blue, and yellow colors at the time of the accident.

圖1(c)係示意性地顯示攝影裝置1之鏡筒前側之構成之圖。 Fig. 1(c) is a view schematically showing the configuration of the front side of the lens barrel of the photographing apparatus 1.

如圖1(c)所示,攝影裝置1於透鏡10之周圍配置有複數個發光二極體101、及用以偵測目標區域之照度之1個照度感測器102。於夜間等照度較低之狀況下,發光二極體101被點亮而照射目標區域。發光二極體101係藉由紅外光對目標區域進行照明之照明光源。複數個發光二極體101係由發光強度為波峰之波峰波長彼此不同且各個波峰波長包含於 紅外之波長頻帶的複數種發光二極體構成。 As shown in FIG. 1(c), the photographing apparatus 1 is provided with a plurality of light emitting diodes 101 around the lens 10, and an illuminance sensor 102 for detecting the illuminance of the target area. In the case where the illumination is low at night, the light-emitting diode 101 is lit to illuminate the target area. The light-emitting diode 101 is an illumination source that illuminates a target area by infrared light. The plurality of light-emitting diodes 101 have different peak wavelengths of the peaks of the light-emitting intensity and the respective peak wavelengths are included in The plurality of light-emitting diodes of the infrared wavelength band are composed of a plurality of light-emitting diodes.

圖2係顯示攝影裝置1之構成之圖。 Fig. 2 is a view showing the configuration of the photographing apparatus 1.

攝影裝置1具備透鏡10、光圈20、快門30、影像感測器40、濾波器50、切換機構51、攝影訊號處理電路61、快門驅動電路62、濾波器驅動電路63、光圈驅動電路64、LED驅動電路65、檢測訊號處理電路66、控制部67、記憶部68、通訊部69、及電源電路70。 The photographing apparatus 1 includes a lens 10, a diaphragm 20, a shutter 30, an image sensor 40, a filter 50, a switching mechanism 51, a photographing signal processing circuit 61, a shutter drive circuit 62, a filter drive circuit 63, a diaphragm drive circuit 64, and an LED. The drive circuit 65, the detection signal processing circuit 66, the control unit 67, the memory unit 68, the communication unit 69, and the power supply circuit 70.

透鏡10擷取來自目標區域之光,並使目標區域之像於影像感測器40之受光面成像。光圈20以根據來自目標區域之光之強弱而使適當之光量入射至影像感測器40之方式限制來自外部之光。光圈20藉由光圈驅動電路64調整光闌量。 The lens 10 extracts light from the target area and images the image of the target area on the light receiving surface of the image sensor 40. The aperture 20 restricts light from the outside in such a manner that an appropriate amount of light is incident on the image sensor 40 in accordance with the intensity of light from the target area. The aperture 20 adjusts the amount of pupil by the aperture driving circuit 64.

快門30係液晶快門。快門30例如係具有於被施加電壓之狀態下透射率成為最大、當電壓之施加被阻斷時透射率降低之所謂常黑(normaly black)方式之特性之液晶快門。於該情形時,快門30於被施加電壓之狀態下使光透過,於未被施加電壓之狀態下阻斷光。此外,快門30亦可為於未被施加電壓之狀態下透射率成為最大、當被施加電壓時透射率降低之所謂常白(normaly white)方式之特性之液晶快門。又,快門30只要可以高速開閉,則進而亦可為其他方式之快門。快門30根據來自快門驅動電路62之驅動訊號切換開閉狀態。 The shutter 30 is a liquid crystal shutter. The shutter 30 is, for example, a so-called normaly black type liquid crystal shutter having a transmittance which is maximized in a state where a voltage is applied and a transmittance is lowered when the application of the voltage is blocked. In this case, the shutter 30 transmits light in a state where a voltage is applied, and blocks the light in a state where no voltage is applied. Further, the shutter 30 may be a so-called normaly white type liquid crystal shutter in which the transmittance is maximized in a state where no voltage is applied and the transmittance is lowered when a voltage is applied. Further, the shutter 30 may be a shutter of another type as long as it can be opened and closed at a high speed. The shutter 30 is switched on and off in accordance with a drive signal from the shutter drive circuit 62.

影像感測器40係CMOS影像感測器。影像感測器40係可生成彩色影像之彩色影像感測器。影像感測器40,於與受光面上之各像素對應之位置,分別具有光電二極體(photodiode)。又,影像感測器於與分別接收紅、藍及綠之光之像素對應之位置,配置有用以對紅、藍及綠之光進行 過濾之彩色濾光片。影像感測器40,以就每一線進行對光電二極體之電荷之蓄積與輸出之方式藉由攝影訊號處理電路61控制。再者,影像感測器40亦可為黑白影像感測器。 The image sensor 40 is a CMOS image sensor. The image sensor 40 is a color image sensor that can generate a color image. The image sensor 40 has a photodiode at a position corresponding to each pixel on the light receiving surface. Moreover, the image sensor is configured to be used for red, blue, and green light at positions corresponding to pixels respectively receiving red, blue, and green light. Filtered color filters. The image sensor 40 is controlled by the photographic signal processing circuit 61 in such a manner that the charge and output of the photodiode are performed for each line. Furthermore, the image sensor 40 can also be a black and white image sensor.

濾波器50從由透鏡10聚光之光將紅外之波長頻帶之光去除。切換機構51使濾波器50相對被透鏡10擷取至影像感測器40之光之光路插拔。切換機構51根據來自濾波器驅動電路63之驅動訊號切換濾波器50之插拔。 The filter 50 removes light of the infrared wavelength band from the light condensed by the lens 10. The switching mechanism 51 causes the filter 50 to be inserted and removed with respect to the optical path of the light that is captured by the lens 10 to the image sensor 40. The switching mechanism 51 switches the insertion and removal of the filter 50 based on the drive signal from the filter drive circuit 63.

LED驅動電路65,根據來自控制部67之控制使發光二極體101點亮或熄滅。檢測訊號處理電路66對來自照度感測器102之檢測訊號進行放大及A/D轉換等處理,並將處理後之訊號輸出至控制部67。 The LED drive circuit 65 turns on or off the light-emitting diode 101 in accordance with control from the control unit 67. The detection signal processing circuit 66 performs processing such as amplification and A/D conversion on the detection signal from the illuminance sensor 102, and outputs the processed signal to the control unit 67.

控制部67具備CPU(Central Processing Unit)等運算處理電路,並根據保持於記憶部68之程式控制各部。記憶部68保持控制用之程式,此外,亦被用作藉由控制部67進行控制時之工作區域。藉由保持於記憶部68之程式,控制部67控制攝影訊號處理電路61、快門驅動電路62、濾波器驅動電路63、光圈驅動電路64及LED驅動電路65。 The control unit 67 includes an arithmetic processing circuit such as a CPU (Central Processing Unit), and controls each unit based on a program held in the storage unit 68. The memory unit 68 holds the program for control, and is also used as a work area when the control unit 67 performs control. The control unit 67 controls the imaging signal processing circuit 61, the shutter drive circuit 62, the filter drive circuit 63, the diaphragm drive circuit 64, and the LED drive circuit 65 by the program held in the memory unit 68.

通訊部69與圖1(a)所示之外部裝置2進行通訊。電源電路70連接於商用交流電源,調整自商用交流電源供給之電力並供給至攝影裝置1內之各部。 The communication unit 69 communicates with the external device 2 shown in Fig. 1(a). The power supply circuit 70 is connected to a commercial alternating current power supply, and is supplied with electric power supplied from a commercial alternating current power supply and supplied to each unit in the photographing apparatus 1.

圖3係示意性地顯示影像感測器40之構成之圖。為方便起見,於圖3中示出與9個像素對應之部分之構成,但實際上係於縱向與橫向上與既定之像素數對應地配置有同樣之構成。 FIG. 3 is a view schematically showing the configuration of the image sensor 40. For the sake of convenience, the configuration of the portion corresponding to nine pixels is shown in FIG. 3, but actually, the same configuration is arranged in the vertical and horizontal directions corresponding to the predetermined number of pixels.

影像感測器40於與各像素對應之位置具有光電二極體 40a。光電二極體40a,當接收到光時,蓄積與受光光量相應之電荷。經蓄積之電荷藉由放大器40b被轉換成電壓並被放大。當開關40c設為ON時,經放大之電壓就每一線L被傳輸至垂直訊號線40d。經傳輸之電壓藉由配置於各垂直訊號線40d之行電路40e暫時保持。當行選擇開關40f設為ON時,被保持之電壓被輸送至水平訊號線40g。接下來,被輸送至水平訊號線40g之電壓被輸送至攝影訊號處理電路61。如此一來,於影像感測器40中,就每一線L發送電壓訊號。 The image sensor 40 has a photodiode at a position corresponding to each pixel. 40a. The photodiode 40a accumulates a charge corresponding to the amount of received light when light is received. The accumulated charge is converted into a voltage by the amplifier 40b and amplified. When the switch 40c is set to ON, the amplified voltage is transmitted to the vertical signal line 40d for each line L. The transmitted voltage is temporarily held by the row circuit 40e disposed in each of the vertical signal lines 40d. When the row selection switch 40f is set to ON, the held voltage is supplied to the horizontal signal line 40g. Next, the voltage supplied to the horizontal signal line 40g is sent to the photographic signal processing circuit 61. In this way, in the image sensor 40, a voltage signal is transmitted for each line L.

又,影像感測器40係以就每一線L進行對光電二極體40a之電荷之蓄積之方式被控制。也就是,1條線L上之光電二極體40a於既定之期間被設定為可蓄積電荷之狀態,當經過該期間時,輸出該線L上之各光電二極體40a所產生之電荷。該控制係自最上段之線L朝向最下段之線L依序進行。當線L處於可蓄積電荷之狀態時,若對線L上之光電二極體40a照射光,則與所照射之光之光量對應之電荷被蓄積於該線上之各光電二極體40a。以如上方式蓄積之電荷如上所述般就每一線L被讀取,且被轉換成電壓訊號,並輸出至攝影訊號處理電路61。 Further, the image sensor 40 is controlled such that the charge of the photodiode 40a is accumulated for each line L. That is, the photodiode 40a on one line L is set to a state in which electric charge can be accumulated for a predetermined period of time, and when the period elapses, the electric charge generated by each photodiode 40a on the line L is output. This control system is sequentially performed from the line L of the uppermost stage toward the line L of the lowermost stage. When the line L is in a state in which electric charge can be accumulated, when the photodiode 40a on the line L is irradiated with light, electric charges corresponding to the amount of light of the irradiated light are accumulated in the respective photodiodes 40a on the line. The charge accumulated in the above manner is read for each line L as described above, and is converted into a voltage signal, and is output to the photographic signal processing circuit 61.

以下,將各線被設定為可蓄積電荷之狀態之期間稱為「電荷蓄積期間」。 Hereinafter, a period in which each line is set to a state in which charges can be accumulated is referred to as a "charge accumulation period".

返回至圖2,攝影訊號處理電路61將影像感測器40上之各線依序設定為電荷蓄積期間,並就每一線進行電荷之讀取。攝影訊號處理電路61具備A/D轉換電路,將透過水平訊號線40g(參照圖3)自影像感測器40供給之每一線之電壓訊號轉換成數位訊號,並輸出至控制部67。控制部67使自攝影訊號處理電路61供給之數位訊號(圖像訊號)儲存於記憶 部68。如此一來,由自攝影訊號處理電路61輸出之總線量(1幀量)之圖像訊號構成1張攝影影像。 Returning to Fig. 2, the photographic signal processing circuit 61 sequentially sets the lines on the image sensor 40 to the charge accumulation period, and performs charge reading for each line. The photographic signal processing circuit 61 includes an A/D conversion circuit that converts the voltage signal of each line supplied from the image sensor 40 through the horizontal signal line 40g (see FIG. 3) into a digital signal, and outputs it to the control unit 67. The control unit 67 stores the digital signal (image signal) supplied from the photo signal processing circuit 61 in the memory. Part 68. As a result, the image signal of the bus amount (one frame amount) output from the photo signal processing circuit 61 constitutes one photographic image.

圖4(a)~(c)係對影像感測器40之電荷之讀取控制進行說明之圖。圖4(a)係示意性地顯示以普通之速度自各線進行電荷之讀取的情形時之控制(以下,稱為「普通模式」)之圖,圖4(b)係示意性地顯示以高速自各線進行電荷之讀取的情形時之控制(以下,稱為「高速模式」)之圖。又,圖4(c)係示意性地顯示以低速自各線進行電荷之讀取的情形時之控制(以下,稱為「低速模式」)之圖。 4(a) to 4(c) are diagrams for explaining the reading control of the electric charge of the image sensor 40. Fig. 4(a) is a view schematically showing a control in the case of reading electric charges from respective lines at a normal speed (hereinafter, referred to as "normal mode"), and Fig. 4(b) is schematically shown as The control at the time of high-speed reading of electric charge from each line (hereinafter referred to as "high-speed mode"). Moreover, FIG. 4(c) is a view schematically showing control (hereinafter referred to as "low speed mode") in the case where the electric charge is read from each line at a low speed.

於圖4(a)~(c)之左側,示意性地示出影像感測器40之受光面與各線L。此處,最上段之線L被設為L0,最下段之線被設為Ln。又,於圖4(a)~(c)之右側,示意性地示出對各線之控制時序。 On the left side of FIGS. 4(a) to 4(c), the light receiving surface of the image sensor 40 and each line L are schematically shown. Here, the line L of the uppermost stage is set to L0, and the line of the lowermost stage is set to Ln. Further, on the right side of Figs. 4(a) to 4(c), the control timing for each line is schematically shown.

參照圖4(a),於普通模式下,對最上段之線L0之控制,係於時序t1開始,於時序t2結束。對下一段之線L2之控制,係較時序t1延遲既定時間後開始。如此一來,每當線L變化成下段時,一邊使開始時序逐次延遲既定時間,一邊依序進行對各線之控制。最下段之線Ln之開始時序,成為自時序t1延遲△t後之時序t2。 Referring to Fig. 4(a), in the normal mode, the control of the uppermost line L0 is started at the timing t1 and ends at the timing t2. The control of the line L2 of the next segment is started after the predetermined time has elapsed from the timing t1. In this way, each time the line L changes to the lower stage, the start timing is sequentially delayed by a predetermined time, and the control of each line is sequentially performed. The start timing of the lowermost line Ln is the timing t2 after the delay Δt from the timing t1.

於最上段之線L0中,自時序t1至時序t2之間蓄積電荷。例如,將時序t1至時序t2之間之整個期間△t設為電荷蓄積期間。針對其他線L,亦同樣地設定電荷蓄積期間。於自時序t1經過期間△t後之時序t2,執行對最上段之線L0之電荷之讀取。 In the uppermost line L0, charges are accumulated from the timing t1 to the timing t2. For example, the entire period Δt between the timing t1 and the timing t2 is set as the charge accumulation period. The charge accumulation period is also set similarly for the other line L. The reading of the charge of the uppermost line L0 is performed at the timing t2 after the period Δt elapses from the timing t1.

關於第2階段之線L1,於自時序t1延遲既定時間後之時序開始蓄積電荷,於自時序t2延遲既定時間後之時序執行電荷之讀取。如此 一來,每當線L變化時,電荷蓄積之開始時序逐次延遲既定時間,電荷讀取之執行時序亦逐次延遲既定時間。對最下段之線Ln之電荷蓄積之開始時序,成為自時序t1延遲△t後之時序t2,電荷讀取之執行時序,成為自時序t2延遲△t後之時序t3。 The line L1 of the second stage starts accumulating charges at a timing delayed by a predetermined time from the timing t1, and performs charge reading at a timing delayed by a predetermined time from the timing t2. in this way As a result, each time the line L changes, the start timing of the charge accumulation is successively delayed by a predetermined time, and the execution timing of the charge reading is also sequentially delayed by a predetermined time. The start timing of the charge accumulation of the lowermost line Ln is the timing t2 after the delay Δt from the timing t1, and the execution timing of the charge reading becomes the timing t3 after the delay Δt from the timing t2.

如上所述,於普通模式下,對最上段之線L0之電荷蓄積之結束時序,成為對最下段之線Ln之電荷蓄積之開始時序。因此,於普通模式下,所有線之電荷蓄積期間不會產生重合之期間。 As described above, in the normal mode, the end timing of the charge accumulation on the uppermost line L0 becomes the start timing of the charge accumulation on the lowermost line Ln. Therefore, in the normal mode, there is no coincidence period during charge accumulation of all lines.

參照圖4(b),於高速模式下,對各線L之電荷之讀取速度提高,藉此,線L間之控制開始時序之偏移量與普通模式相比縮短。於圖4(b)之例中,線L間之控制開始時序之偏移量與普通模式相比降低至一半。因此,對最下段之線Ln之控制之開始時序,止於自對最上段之線L0之控制之開始時序t1延遲△t/2。 Referring to Fig. 4(b), in the high speed mode, the reading speed of the electric charge of each line L is increased, whereby the amount of shift between the control start timings between the lines L is shortened compared with the normal mode. In the example of Fig. 4(b), the offset of the control start timing between the lines L is reduced by half compared with the normal mode. Therefore, the start timing of the control of the lowermost line Ln is delayed by Δt/2 from the start timing t1 of the control of the uppermost line L0.

對各線L之電荷之讀取速度係藉由將使各線之電荷訊號標本化(A/D轉換)時之位元數較普通模式時之位元數削減而高速化。該處理係基於藉由圖2之控制部67進行之控制並藉由攝影訊號處理電路61而進行。於高速模式下,由於如上所述般標本化位元數被削減,故而與普通模式相比,攝影影像之畫質略微劣化。然而,該劣化,於監視攝影機等用途中,係視認性(visibility)並不存在特別問題之程度者。或者,亦可藉由影像感測器40及攝影訊號處理電路61之改善、高速化而保留同等之標本化位元數。 The reading speed of the electric charge of each line L is increased by reducing the number of bits when the charge signal of each line is sampled (A/D conversion) is smaller than the number of bits in the normal mode. This processing is performed based on the control by the control unit 67 of Fig. 2 and by the photographic signal processing circuit 61. In the high speed mode, since the number of sample bits is reduced as described above, the image quality of the photographic image is slightly deteriorated compared with the normal mode. However, this deterioration is not a problem in that the visibility is not particularly problematic in applications such as surveillance cameras. Alternatively, the number of equivalent sample bits can be retained by the improvement and speeding up of the image sensor 40 and the photographic signal processing circuit 61.

如上所述,藉由將對影像感測器40之控制模式設定為高速模式,如圖4(b)所示,所有線之電荷蓄積期間產生相互重合之重疊蓄積 期間。並且,藉由在該重疊蓄積期間打開快門30進行曝光,而對各線L以相同之時序照射來自目標區域之光,且所有線L上之光電二極體40a以相同之時序及曝光量將蓄積電荷。因此,可抑制以高速移動之被拍攝體之攝影影像產生變形。也就是,可抑制旋轉快門(Rolling Shutter)現象,實現使用影像感測器40之全域快門(Global Shutter)功能。 As described above, by setting the control mode of the image sensor 40 to the high speed mode, as shown in FIG. 4(b), overlapping accumulation of mutually coincident charge accumulation periods occurs. period. Further, by performing the exposure by opening the shutter 30 during the overlap accumulation, the light from the target region is irradiated to the respective lines L at the same timing, and the photodiodes 40a on all the lines L are accumulated at the same timing and exposure amount. Charge. Therefore, it is possible to suppress deformation of the photographic image of the subject moving at a high speed. That is, the Rolling Shutter phenomenon can be suppressed, and the Global Shutter function using the image sensor 40 can be realized.

於本實施形態中,影像感測器40之控制模式被設定為高速模式。並且,於重疊蓄積期間打開快門30,將來自目標區域之光引導至影像感測器40。 In the present embodiment, the control mode of the image sensor 40 is set to the high speed mode. Further, the shutter 30 is opened during the overlap accumulation, and the light from the target area is guided to the image sensor 40.

再者,亦可藉由將影像感測器40之控制模式設定為低速模式而產生重疊蓄積期間。如圖4(c)所示,於低速模式下,將各線之攝影期間設定為普通模式之2倍、即2△t。於該情形時,快門30亦於重疊蓄積期間被打開。藉此,與高速模式之情形時同樣,亦可抑制以高速移動之被拍攝體之攝影影像產生變形。 Furthermore, the overlap accumulation period can also be generated by setting the control mode of the image sensor 40 to the low speed mode. As shown in FIG. 4(c), in the low speed mode, the shooting period of each line is set to twice the normal mode, that is, 2 Δt. In this case, the shutter 30 is also opened during the overlap accumulation. Thereby, similarly to the case of the high speed mode, it is possible to suppress deformation of the photographic image of the subject moving at a high speed.

圖5(a)、(b)係示意性地顯示切換機構51之構成之圖。 5(a) and 5(b) are diagrams schematically showing the configuration of the switching mechanism 51.

切換機構51具備基底510、移動板520、馬達530及桿540。 The switching mechanism 51 includes a base 510, a moving plate 520, a motor 530, and a rod 540.

基底510,於左右的端部,分別具備剖面為L字狀之2個導件511。2個導件511,以和移動板520之上面及側面相接之方式,分別卡合於移動板520之左右的端部。藉此,移動板520可於長邊方向移動地被支持於基底510。於基底510形成有貫通口512。 The base plate 510 has two guide members 511 each having an L-shaped cross section at the left and right end portions. The two guide members 511 are respectively engaged with the moving plate 520 so as to be in contact with the upper surface and the side surface of the moving plate 520. The left and right ends. Thereby, the moving plate 520 is supported by the base 510 so as to be movable in the longitudinal direction. A through opening 512 is formed in the base 510.

移動板520係由薄板狀之構件構成。於移動板520形成有沿長邊方向排列之2個開口521、522。於開口521安裝有圖2所示之濾波器50。為了使光程長度一致,於開口522安裝有玻璃板等透明之板。於圖5(a) 之狀態下,開口521位於基底510之貫通口512之位置。於移動板520形成有向右方向突出之凸緣部520a。於該凸緣部520a形成有沿橫向延伸之長孔523。 The moving plate 520 is composed of a thin plate-shaped member. The movable plate 520 is formed with two openings 521 and 522 arranged in the longitudinal direction. A filter 50 shown in Fig. 2 is attached to the opening 521. In order to make the optical path length uniform, a transparent plate such as a glass plate is attached to the opening 522. Figure 5 (a) In the state, the opening 521 is located at the through opening 512 of the substrate 510. A flange portion 520a that protrudes in the right direction is formed in the moving plate 520. An elongated hole 523 extending in the lateral direction is formed in the flange portion 520a.

桿540之一端部固接於馬達530之驅動軸531。當馬達530被驅動時,桿540於圖5(a)、(b)中沿順時針方向或逆時針方向旋轉。於桿540之另一端部之上面形成有銷541,該銷541自凸緣部520a之背面側插入至長孔523。馬達530為步進馬達。 One end of the rod 540 is fixed to the drive shaft 531 of the motor 530. When the motor 530 is driven, the lever 540 rotates clockwise or counterclockwise in Figures 5(a), (b). A pin 541 is formed on the other end of the rod 540, and the pin 541 is inserted into the long hole 523 from the back side of the flange portion 520a. Motor 530 is a stepper motor.

形成於基底510之貫通口512成為由圖2所示之透鏡10聚光之光之光路。因此,於圖5(a)之狀態下,濾波器50被插入至光路。當驅動馬達530而使桿540沿逆時針方向旋轉時,銷541推壓長孔523而使移動板520滑動。當移動板520滑動至圖5(b)之位置時,開口522位於貫通口512之位置。如此一來,濾波器50偏離光路而將光路打開。 The through hole 512 formed in the substrate 510 serves as an optical path for the light collected by the lens 10 shown in FIG. Therefore, in the state of Fig. 5 (a), the filter 50 is inserted into the optical path. When the motor 530 is driven to rotate the lever 540 in the counterclockwise direction, the pin 541 pushes the long hole 523 to slide the moving plate 520. When the moving plate 520 is slid to the position of FIG. 5(b), the opening 522 is located at the position of the through opening 512. As a result, the filter 50 is deflected from the optical path to open the optical path.

圖2之濾波器驅動電路63,藉由來自控制部67之控制,驅動馬達530,使移動板520位於圖5(a)之位置與圖5(b)之位置之任一者。藉此,使濾波器50相對於由透鏡10聚光之光之光路插拔。 The filter drive circuit 63 of Fig. 2 drives the motor 530 under the control of the control unit 67 to position the moving plate 520 at either the position of Fig. 5 (a) and the position of Fig. 5 (b). Thereby, the filter 50 is inserted and removed with respect to the optical path of the light collected by the lens 10.

圖6係顯示濾波器50與發光二極體101之控制之流程圖。 FIG. 6 is a flow chart showing the control of the filter 50 and the light-emitting diode 101.

當攝影動作開始時,控制部67判定藉由照度感測器102檢測出之照度是否小於既定之閾值(S11)。 When the photographing operation is started, the control unit 67 determines whether or not the illuminance detected by the illuminance sensor 102 is smaller than a predetermined threshold (S11).

於夜間或傍晚等日照較弱而目標區域之照度較低之情形時,步驟S11之判定為YES。於步驟S11之判定為YES之情形時,控制部67使所有發光二極體101點亮(S12),進一步地,控制切換機構51而使濾波器50從由透鏡10聚光之光之光路退避(S13)。 When the sunshine is weak at night or in the evening and the illumination of the target area is low, the determination in step S11 is YES. When the determination in step S11 is YES, the control unit 67 turns on all of the light-emitting diodes 101 (S12), and further controls the switching mechanism 51 to evacuate the filter 50 from the light path of the light collected by the lens 10. (S13).

另一方面,於白天等日照較強而目標區域之照度較高之情形時,步驟S11之判定為NO。於步驟S11之判定為NO之情形時,控制部67使所有發光二極體101熄滅(S14),進一步地,控制切換機構51而將濾波器50插入至由透鏡10聚光之光之光路(S15)。控制部67反覆進行步驟S11~S15之處理,直至攝影動作結束為止(S16:YES)。 On the other hand, when the daylight is strong during the day and the illuminance of the target area is high, the determination in step S11 is NO. When the determination in step S11 is NO, the control unit 67 turns off all of the light-emitting diodes 101 (S14), and further controls the switching mechanism 51 to insert the filter 50 into the light path of the light collected by the lens 10 ( S15). The control unit 67 repeats the processing of steps S11 to S15 until the shooting operation is completed (S16: YES).

然而,於本實施形態中,係以可藉由照射至目標區域之紅外光取得對比度較高之攝影影像之方式調整發光二極體101之發光光譜。更詳細而言,圖1(c)所示之複數個發光二極體101係由發光強度為波峰之波峰波長彼此不同且各個波峰波長包含於紅外之波長頻帶的3種發光二極體之組合構成。 However, in the present embodiment, the luminescence spectrum of the illuminating diode 101 is adjusted so that the photographic image having a high contrast can be obtained by the infrared light irradiated to the target region. More specifically, the plurality of light-emitting diodes 101 shown in FIG. 1(c) are a combination of three types of light-emitting diodes in which the peak wavelengths of the peaks are different from each other and the peak wavelengths are included in the infrared wavelength band. Composition.

以下,針對發光二極體101之發光光譜之設定例進行說明。 Hereinafter, a setting example of the light emission spectrum of the light-emitting diode 101 will be described.

<實施例1> <Example 1>

圖7(a)係顯示比較例及實施例1之影像感測器40之光譜靈敏度特性之圖。 Fig. 7(a) is a view showing the spectral sensitivity characteristics of the image sensor 40 of the comparative example and the first embodiment.

於實施例1中,作為影像感測器40,使用利用P型矽基板之CMOS影像感測器。於圖7(a)中一併示出使用N型矽基板之影像感測器之光譜靈敏度特性作為比較例。如圖7(a)所示,若如實施例1般將P型矽基板用作影像感測器40之基板,則與使用N型之矽基板之情形時(比較例)相比,可提高近紅外頻帶之靈敏度,故而可使靈敏度之波峰向紅外波長頻帶側移動。 In the first embodiment, as the image sensor 40, a CMOS image sensor using a P-type germanium substrate is used. The spectral sensitivity characteristics of the image sensor using the N-type germanium substrate are shown together as a comparative example in Fig. 7(a). As shown in FIG. 7(a), when the P-type germanium substrate is used as the substrate of the image sensor 40 as in the first embodiment, it can be improved as compared with the case of using the N-type germanium substrate (comparative example). The sensitivity of the near-infrared band allows the peak of sensitivity to move toward the infrared wavelength band side.

圖7(b)係顯示實施例1之配置於影像感測器40之彩色濾光片之光譜透射率特性(spectral transmission characteristic)之圖。圖7(b)中 之R、G、B分別表示與接收紅、綠、藍之光之像素對應之彩色濾光片之光譜透射率特性。如圖7(b)所示,各色之彩色濾光片係以於該色之波長頻帶下透射率增高之方式設定。又,各色之彩色濾光片均為當波長超過820nm附近時,將透射率維持為較高。 Fig. 7(b) is a view showing the spectral transmission characteristic of the color filter disposed in the image sensor 40 of the first embodiment. Figure 7 (b) R, G, and B respectively indicate spectral transmittance characteristics of color filters corresponding to pixels that receive red, green, and blue light. As shown in FIG. 7(b), the color filters of the respective colors are set such that the transmittance in the wavelength band of the color is increased. Further, when the color filters of the respective colors are in the vicinity of a wavelength exceeding 820 nm, the transmittance is maintained high.

圖7(c)係顯示實施例1之濾波器50之光譜透射率特性之例之圖。如圖7(c)所示,濾波器50當波長超過630nm附近時,透射率急遽降低,於波長700nm附近,透射率大致為零。當波長超過700nm附近時,濾波器50之透射率大致維持為零。 Fig. 7(c) is a view showing an example of the spectral transmittance characteristics of the filter 50 of the first embodiment. As shown in Fig. 7(c), when the wavelength of the filter 50 exceeds 630 nm, the transmittance is drastically lowered, and the transmittance is substantially zero at a wavelength of around 700 nm. When the wavelength exceeds about 700 nm, the transmittance of the filter 50 is maintained substantially at zero.

圖7(d)係顯示實施例1之3種發光二極體101之發光光譜之圖。 Fig. 7 (d) is a view showing the luminescence spectra of the three types of light-emitting diodes 101 of the first embodiment.

於圖7(d)中分別示出3種發光二極體101之發光光譜S1~S3。又,示出人之可見光頻帶之上限A1。一般而言,人之可見光頻帶之上限為700nm左右。因此,於實施例1中,將人之可見光頻帶之上限A1設為700nm。如圖7(d)所示,各個發光光譜S1~S3係以不會達到人之可見光頻帶之上限A1之方式設定。 The luminescence spectra S1 to S3 of the three types of light-emitting diodes 101 are shown in Fig. 7(d), respectively. Further, the upper limit A1 of the visible light band of the person is shown. In general, the upper limit of the human visible light band is about 700 nm. Therefore, in the first embodiment, the upper limit A1 of the human visible light band is set to 700 nm. As shown in FIG. 7(d), each of the luminescence spectra S1 to S3 is set so as not to reach the upper limit A1 of the human visible light band.

圖8係將實施例1之3種發光二極體101之發光光譜擴大而顯示之圖。 Fig. 8 is a view showing an enlarged light emission spectrum of the three types of light-emitting diodes 101 of the first embodiment.

於圖8中,P1~P3分別係發光光譜S1~S3為波峰之位置之波長(波峰波長)。3種發光二極體101之波峰波長P1~P3彼此不同且各個波峰波長P1~P3包含於紅外之波長頻帶(波長700nm以上之頻帶)。 In Fig. 8, P1 to P3 are wavelengths (wavelength wavelengths) at which the luminescence spectra S1 to S3 are positions of the peaks, respectively. The peak wavelengths P1 to P3 of the three types of light-emitting diodes 101 are different from each other, and the respective peak wavelengths P1 to P3 are included in the infrared wavelength band (the wavelength band of 700 nm or more).

如上所述,藉由將波長頻帶不同之3種發光二極體101配置於攝影裝置1,可使照射至目標區域之光之波長寬度變寬。藉此,即便對紅 外光之光譜反射率(spectral reflectivity)特性會因視構成被拍攝體之物質而有所不同,適合各物質之波長之光亦容易照射至各物質。例如,於被拍攝體係由在波長810nm下為高反射率之物質構成之情形時,可藉由來自3種發光二極體101中之發光光譜S1之發光二極體101的光而獲得來自被拍攝體之較高的反射光。藉此,即便於夜間等照度較低之狀況下,亦可藉由自3種發光二極體101將不同波長頻帶之光照射至目標區域,而以較高之對比度取得攝影影像。 As described above, by arranging the three types of light-emitting diodes 101 having different wavelength bands in the imaging device 1, the wavelength of light irradiated to the target region can be widened. Thereby, even for red The spectral reflectivity characteristic of external light varies depending on the substance constituting the subject, and light suitable for the wavelength of each substance is also easily irradiated to each substance. For example, when the image capturing system is composed of a substance having a high reflectance at a wavelength of 810 nm, it can be obtained from the light of the light-emitting diode 101 of the light-emitting spectrum S1 of the three types of light-emitting diodes 101. The higher reflected light of the subject. Thereby, even in the case where the illuminance at night is low, the light of the different wavelength bands can be irradiated to the target region from the three types of the light-emitting diodes 101, and the photographic image can be obtained with a high contrast.

此外,3種發光二極體101均以發光光譜之短波長側之裙部之部分不會達到人之可見光頻帶之上限A1之方式設定。因此,即便於夜間等照度較低之狀況下點亮發光二極體101,亦幾乎不會發生位於目標區域之人發現來自發光二極體101之光之情況。因此,即便於將攝影裝置1用於監視目的之情形時,亦可防止因發光二極體101之點亮而導致人感知到此處存在攝影裝置1。 Further, all of the three types of light-emitting diodes 101 are set such that the portion of the skirt on the short-wavelength side of the light-emitting spectrum does not reach the upper limit A1 of the human visible light band. Therefore, even if the light-emitting diode 101 is lit in a situation where the illumination is low at night, the light from the light-emitting diode 101 is hardly found by a person located in the target area. Therefore, even when the photographing apparatus 1 is used for the purpose of monitoring, it is possible to prevent the person from perceiving the presence of the photographing apparatus 1 due to the lighting of the light-emitting diode 101.

再者,如上所述,於影像感測器40為彩色CMOS影像感測器之情形時,例如如圖7(b)所示般設定各色之彩色濾光片之透射率。因此,若將3種發光二極體101之發光光譜S1~S3分別如圖7(d)般進行設定,則於波長短於發光光譜S2之波峰之短波長側,藍與綠之彩色濾光片之透射率低於最大值。因此,波長低於發光光譜S2之波峰之短波長側之光經藍與綠之彩色濾光片過濾而會引起不被有效地利用的情況。 Further, as described above, when the image sensor 40 is a color CMOS image sensor, for example, as shown in FIG. 7(b), the transmittance of the color filters of the respective colors is set. Therefore, when the light-emission spectra S1 to S3 of the three types of light-emitting diodes 101 are respectively set as shown in FIG. 7(d), the color filters of the blue and green colors are shorter than the short-wavelength side of the peak of the light-emitting spectrum S2. The transmittance of the sheet is below the maximum. Therefore, light having a wavelength shorter than the short-wavelength side of the peak of the emission spectrum S2 is filtered by the blue and green color filters, causing a situation in which it is not effectively utilized.

為了避免該情況,彩色濾光片之光譜透射率較佳為以於3種發光二極體101之發光光譜S1~S3之全波長頻帶下維持為較高之方式進行調整。即,較佳為以圖7(b)所示之範圍W1包含發光二極體101之發 光光譜S2之全波長頻帶之方式將範圍W1之短波長側之交界設定於發光二極體101之發光光譜S2之下限之波長附近(例如750nm附近)。即便如上所述般設定彩色濾光片之光譜透射率,如圖7(c)所示,由於濾波器50之光譜透射率於700nm附近收斂為零,故而波長長於紅之波長頻帶之長波長側之近紅外之光亦被濾波器50去除。因此,在白天等照度較高之環境下對目標區域進行拍攝時,可抑制可見光以外之紅外光入射至影像感測器40之各像素。 In order to avoid this, the spectral transmittance of the color filter is preferably adjusted so as to maintain a high level in the entire wavelength band of the light-emitting spectra S1 to S3 of the three types of light-emitting diodes 101. That is, it is preferable that the range of the light-emitting diode 101 is included in the range W1 shown in FIG. 7(b). The boundary of the short-wavelength side of the range W1 is set to the vicinity of the wavelength of the lower limit of the light-emission spectrum S2 of the light-emitting diode 101 (for example, in the vicinity of 750 nm). Even if the spectral transmittance of the color filter is set as described above, as shown in FIG. 7(c), since the spectral transmittance of the filter 50 converges to zero near 700 nm, the wavelength is longer than the long wavelength side of the red wavelength band. The near-infrared light is also removed by the filter 50. Therefore, when the target area is imaged in an environment with high illumination in the daytime, it is possible to suppress infrared light other than visible light from entering each pixel of the image sensor 40.

再者,由於黑白CMOS影像感測器不包含彩色濾光片,故而於使用黑白CMOS影像感測器作為影像感測器40之情形時,上述限制消失。因此,於使用黑白CMOS影像感測器作為影像感測器40之情形時,只要以接近影像感測器40之光譜靈敏度特性之波峰波長之方式設定發光二極體101之發光光譜S1~S3即可。亦於該情形時,發光光譜S1~S3較佳為以短波長側之裙部之部分儘可能不會達到可見光頻帶之上限A1之方式設定。 Furthermore, since the black and white CMOS image sensor does not include a color filter, the above limitation disappears when a black and white CMOS image sensor is used as the image sensor 40. Therefore, when a black-and-white CMOS image sensor is used as the image sensor 40, the light-emitting spectrum S1 to S3 of the light-emitting diode 101 is set so as to be close to the peak wavelength of the spectral sensitivity characteristic of the image sensor 40. can. Also in this case, it is preferable that the luminescence spectra S1 to S3 are set such that the portion of the skirt on the short-wavelength side does not reach the upper limit A1 of the visible light band as much as possible.

<實施例2> <Example 2>

人之可見光頻帶之上限,一般而言為700nm左右,但根據文獻等,亦存在有將人之可見光頻帶之上限設為780nm左右的情形。於實施例2中,將人之可見光頻帶之上限設為780nm左右,並設定3種發光二極體101之發光光譜S1~S3。 The upper limit of the human visible light band is generally about 700 nm. However, according to the literature, there is a case where the upper limit of the human visible light band is about 780 nm. In the second embodiment, the upper limit of the visible light band of the human is set to about 780 nm, and the light-emission spectra S1 to S3 of the three types of the light-emitting diodes 101 are set.

於該情形時,3種發光二極體101之發光光譜S1~S3變更如圖9般。於圖9中,A2為人之可見光頻帶之上限即780nm。P1~P3分別係發光光譜S1~S3為波峰之位置之波長(波峰波長)。 In this case, the luminescence spectra S1 to S3 of the three types of light-emitting diodes 101 are changed as shown in FIG. In Fig. 9, A2 is the upper limit of the human visible light band, that is, 780 nm. P1 to P3 are wavelengths (wavelength wavelengths) at which the luminescence spectra S1 to S3 are peaks.

於該情形,亦與圖8之情形同樣地,可使照射至目標區域之 光之波長的寬度變寬,即便對紅外光之光譜反射率特性會因構成被拍攝體之物質而有所不同,適合各物質之波長之光亦容易照射至各物質。 In this case as well, as in the case of FIG. 8, the irradiation to the target area can be performed. The width of the wavelength of the light is widened, and even if the spectral reflectance characteristic of the infrared light differs depending on the substance constituting the subject, light suitable for the wavelength of each substance is easily irradiated to each substance.

再者,於圖9之情形,發光光譜S2之短波長側之裙部之部分大致達到人之可見光頻帶之上限A2。然而,由於可見光頻帶之上限A2的發光二極體101之強度為峰值之5%左右,故而達到上限A2之裙部之部分的光之強度大致為零或極其微弱。因此,即便於夜間等照度較低之狀況下點亮發光光譜S2之發光二極體101,亦幾乎不會發生位於目標區域之人發現來自發光二極體101之光之情況。因此,即便於將攝影裝置1用於監視目的之情形時,亦可防止因發光二極體101之點亮而導致人感知到此處存在攝影裝置1。 Further, in the case of Fig. 9, the portion of the skirt on the short-wavelength side of the luminescence spectrum S2 substantially reaches the upper limit A2 of the human visible light band. However, since the intensity of the light-emitting diode 101 of the upper limit A2 of the visible light band is about 5% of the peak value, the intensity of the light reaching the portion of the skirt portion of the upper limit A2 is substantially zero or extremely weak. Therefore, even if the light-emitting diode 101 of the light-emitting spectrum S2 is turned on in a situation where the illumination is low at night, the light from the light-emitting diode 101 is hardly found by a person located in the target area. Therefore, even when the photographing apparatus 1 is used for the purpose of monitoring, it is possible to prevent the person from perceiving the presence of the photographing apparatus 1 due to the lighting of the light-emitting diode 101.

<實施形態之效果> <Effects of Embodiments>

根據本實施形態,實現以下之效果。 According to this embodiment, the following effects are achieved.

將波長頻帶不同之3種光自3種發光二極體101照射至目標區域。因此,即便對紅外光之光譜反射率特性會因構成被拍攝體之物質而有所不同,於各物質中反射率較高之波長之光亦容易照射至各物質。因此,即便於夜間等照度較低之狀況下,藉由自照明光源(3種發光二極體101)對目標區域照射光,亦可取得視認性良好且對比度高之攝影影像。 Three types of light having different wavelength bands are irradiated from the three types of light-emitting diodes 101 to the target area. Therefore, even if the spectral reflectance characteristics of the infrared light differ depending on the substance constituting the subject, light of a wavelength having a high reflectance in each substance is easily irradiated to each substance. Therefore, even in a situation where the illuminance at night is low, the target region is irradiated with light from the illumination light source (the three types of light-emitting diodes 101), and a photographic image having good visibility and high contrast can be obtained.

3種發光二極體101係以峰值之5%之發光強度的短波長側之波長至少為可見光頻帶之上限(A1或A2)以上之方式,設定發光光譜S1~S3。因此,即便發光光譜S1~S3之裙部之部分達到可見光頻帶之上限(A1或A2),該部分的光之強度亦大致為零或極其微弱。因此,即便於夜間等照度較低之狀況下點亮發光二極體101,亦幾乎不會發生位於目標區域 之人發現來自發光二極體101之光之情況。因此,即便於將攝影裝置1用於監視目的之情形時,亦可防止因發光二極體101之點亮而導致人感知到此處存在攝影裝置1。 The three kinds of light-emitting diodes 101 are set such that the wavelength on the short-wavelength side of the 5% of the peak intensity is at least the upper limit (A1 or A2) of the visible light band, and the light-emission spectra S1 to S3 are set. Therefore, even if the portion of the skirt of the luminescence spectrum S1 to S3 reaches the upper limit (A1 or A2) of the visible light band, the intensity of the light in this portion is substantially zero or extremely weak. Therefore, even if the light-emitting diode 101 is lit in a situation where the illumination is low at night, the target area is hardly generated. The person finds the light from the light-emitting diode 101. Therefore, even when the photographing apparatus 1 is used for the purpose of monitoring, it is possible to prevent the person from perceiving the presence of the photographing apparatus 1 due to the lighting of the light-emitting diode 101.

於本實施形態中,由於係使用P型矽基板之CMOS影像感測器作為影像感測器40,故而如圖7(a)及圖8所示,與影像感測器40為N型矽基板之CMOS影像感測器之情形相比,影像感測器40之近紅外線區域之靈敏度變高,光譜靈敏度特性之波峰移往更長之長波長側。因此,可提高影像感測器40對來自3種發光二極體101之紅外光的靈敏度,且可使3種發光二極體101點亮時之攝影裝置1之攝影距離變更長。 In the present embodiment, since the CMOS image sensor using the P-type germanium substrate is used as the image sensor 40, as shown in FIGS. 7(a) and 8, the image sensor 40 is an N-type germanium substrate. In the case of the CMOS image sensor, the sensitivity of the near-infrared region of the image sensor 40 becomes higher, and the peak of the spectral sensitivity characteristic shifts to the longer long wavelength side. Therefore, the sensitivity of the image sensor 40 to the infrared light from the three types of the light-emitting diodes 101 can be improved, and the photographing distance of the photographing apparatus 1 when the three kinds of the light-emitting diodes 101 are turned on can be changed long.

又,由於影像感測器40係可生成彩色影像之彩色影像感測器,因此於白天等照度較高之狀況下,可以彩色影像對目標區域進行拍攝,於夜間等照度較低之狀況下,可使用來自發光二極體101之紅外光以黑白影像對目標區域進行拍攝。 Moreover, since the image sensor 40 is a color image sensor capable of generating a color image, the color image can be used to capture the target area in a situation where the illumination is high during the daytime, and the illumination is low at night. The infrared light from the light-emitting diode 101 can be used to photograph the target area in a black-and-white image.

又,由於為以下之構成,即,在以照度感測器102檢測出之照度未達既定閾值的情形時,使濾波器50自透鏡10之光路退避,並且使發光二極體101點亮,在以照度感測器102檢測出之照度為閾值以上的情形時,將濾波器50插入至透鏡10之光路,並且使發光二極體101熄滅,因此,於白天等照度較高之狀況下,可以利用濾波器50去除紅外光之影響後之高品質之彩色影像對目標區域進行拍攝,於夜間等照度較低之狀況下,可使用來自發光二極體101之紅外光以黑白影像對目標區域進行拍攝。 In addition, when the illuminance detected by the illuminance sensor 102 does not reach a predetermined threshold value, the filter 50 is evacuated from the optical path of the lens 10, and the light-emitting diode 101 is turned on. When the illuminance detected by the illuminance sensor 102 is equal to or greater than the threshold value, the filter 50 is inserted into the optical path of the lens 10, and the light-emitting diode 101 is turned off. Therefore, in the case where the illumination is high during the daytime, The high-quality color image after the influence of the infrared light can be removed by the filter 50 to capture the target area. In the case where the illumination is low at night, the infrared light from the LED 101 can be used to black and white the image to the target area. Take a picture.

<變更例> <Modification>

於上述實施例1中,如圖7(d)及圖8所示,3種發光二極體101之發 光光譜S1~S3均以不會達到人之可見光頻帶之上限A1之方式設定,但例如亦可以發光光譜S2之短波長側之裙部之部分達到可見光頻帶之上限A1之方式,將發光光譜S1~S3移往短波長側。但是,亦於該情形時,發光光譜S2較佳為以峰值之5%之發光強度的短波長側之波長為可見光頻帶之上限A1以上之方式設定。藉此,由於達到可見光頻帶之上限A1之部分的光之強度大致為零或極其微弱,故而即便於夜間等照度較低之狀況下點亮發光二極體101,亦幾乎不會發生位於目標區域之人發現來自發光二極體101之光的情況。因此,即便於將攝影裝置1用於監視目的之情形時,亦可抑制因發光二極體101之點亮而導致人感知到此處存在攝影裝置1。 In the above embodiment 1, as shown in FIG. 7(d) and FIG. 8, three kinds of light-emitting diodes 101 are emitted. The light spectrums S1 to S3 are set so as not to reach the upper limit A1 of the human visible light band. However, for example, the portion of the skirt on the short wavelength side of the light emission spectrum S2 may reach the upper limit A1 of the visible light band, and the light emission spectrum S1 may be used. ~S3 moves to the short wavelength side. However, in this case as well, the light-emitting spectrum S2 is preferably set such that the wavelength on the short-wavelength side of the light-emitting intensity of 5% of the peak is equal to or higher than the upper limit A1 of the visible light band. Thereby, since the intensity of the light reaching the upper limit A1 of the visible light band is substantially zero or extremely weak, even if the light-emitting diode 101 is lit in a situation where the illumination is low at night, the target region is hardly generated. The person finds the light from the light-emitting diode 101. Therefore, even when the photographing apparatus 1 is used for the purpose of monitoring, it is possible to suppress the person from perceiving that the photographing apparatus 1 is present due to the lighting of the light-emitting diode 101.

又,於上述實施例2中,如圖9所示,發光光譜S2之短波長側之裙部之部分達到人之可見光頻帶之上限A2,但亦可以發光光譜S2之短波長側之裙部之部分不會達到可見光頻帶之上限A2之方式將發光光譜S1~S3移往長波長側。 Further, in the second embodiment, as shown in FIG. 9, the portion of the skirt portion on the short-wavelength side of the luminescence spectrum S2 reaches the upper limit A2 of the human visible light band, but the skirt portion on the short-wavelength side of the luminescence spectrum S2 may be used. The luminescence spectrum S1 to S3 are shifted to the long wavelength side in such a manner that the upper limit A2 of the visible light band is not reached.

又,自3種發光二極體101照射至目標區域的光之強度可不必彼此相同,亦可將自一種發光二極體101照射至目標區域的光之強度設定為高於自其他種類之發光二極體101照射至目標區域的光之強度。 Further, the intensity of light irradiated to the target region from the three types of the light-emitting diodes 101 may not necessarily be the same as each other, and the intensity of light irradiated from the light-emitting diode 101 to the target region may be set higher than that of other types of light. The intensity of the light that the diode 101 illuminates to the target area.

例如,亦可將自波峰波長接近影像感測器40之光譜靈敏度特性之波峰波長的發光二極體101(於圖8、圖9之情形時為發光光譜S2之發光二極體101)照射至目標區域的光之強度,設定為高於自其他2個發光二極體101(於圖8、圖9之情形時為發光光譜S1、S3之發光二極體101)照射至目標區域的光之強度。藉此,影像感測器40之光譜靈敏度高之波長頻帶之照明光之強度提高,故而與所有發光二極體101之發光強度一律相 同之情形相比,可使攝影裝置1之攝影有效距離變長。 For example, the light-emitting diode 101 (the light-emitting diode 101 which is the light-emitting spectrum S2 in the case of FIGS. 8 and 9) may be irradiated to the light-emitting diode 101 having a peak wavelength close to the spectral sensitivity characteristic of the image sensor 40. The intensity of the light in the target region is set to be higher than that of the light emitted from the other two light-emitting diodes 101 (the light-emitting diodes 101 of the light-emitting spectra S1 and S3 in the case of FIGS. 8 and 9). strength. Thereby, the intensity of the illumination light in the wavelength band in which the spectral sensitivity of the image sensor 40 is high is increased, so that the luminous intensity of all the light-emitting diodes 101 is uniform. In comparison with the case, the photographing effective distance of the photographing apparatus 1 can be made longer.

或者,亦可將自波峰波長遠離影像感測器40之光譜靈敏度特性之波峰波長的發光二極體101(於圖8、圖9之情形時為發光光譜S3之發光二極體101)照射至目標區域的光之強度,設定為高於自其他2個發光二極體101(於圖8、圖9之情形時為發光光譜S1、S2之發光二極體101)照射至目標區域的光之強度。藉此,影像感測器40之光譜靈敏度低之波長頻帶之照明光之強度提高,故而與所有發光二極體101之發光強度一律相同之情形時相比,對在發光光譜S3之波長頻帶下具有存在特徵之光譜反射率特性之被拍攝體,容易獲得視認性良好且對比度高之影像。如此一來,對於各種被拍攝體,可容易地獲得最佳之照明光。 Alternatively, the light-emitting diode 101 having the peak wavelength away from the spectral sensitivity characteristic of the image sensor 40 (the light-emitting diode 101 of the light-emitting spectrum S3 in the case of FIGS. 8 and 9) may be irradiated to The intensity of light in the target region is set to be higher than that of the light emitted from the other two light-emitting diodes 101 (the light-emitting diodes 101 of the light-emitting spectra S1 and S2 in the case of FIGS. 8 and 9). strength. Thereby, the intensity of the illumination light in the wavelength band having a low spectral sensitivity of the image sensor 40 is increased, and thus the wavelength band of the luminescence spectrum S3 is compared with the case where the luminescence intensity of all the illuminating diodes 101 is uniformly the same. A subject having a characteristic spectral reflectance characteristic can easily obtain an image with good visibility and high contrast. In this way, optimum illumination light can be easily obtained for various subjects.

於上述實施形態中,將3種發光二極體101設置於攝影裝置1,但發光二極體101之種類(波長頻帶)並不一定限定於3種,亦可為2種或4種以上。越是增加發光二極體101之種類(波長頻帶),越可使照射至目標區域的光之波長之寬度變寬,可寬廣地應對構成被拍攝體之各種物質之光譜反射率特性,容易獲得視認性高且具有對比度之影像。 In the above-described embodiment, the three kinds of the light-emitting diodes 101 are provided in the imaging device 1. However, the types (wavelength bands) of the light-emitting diodes 101 are not limited to three types, and two or more types may be used. The more the type (wavelength band) of the light-emitting diode 101 is increased, the wider the wavelength of the light that is irradiated to the target region is, and the spectral reflectance characteristics of various substances constituting the subject can be broadly recognized, and the spectrum is easily obtained. Highly visible and contrasting images.

再者,各種發光二極體101之數量,並不一定要在種類間彼此相同,亦可為一種發光二極體101之數量多於其他種類之發光二極體101之數量。藉由如上所述般就每個波長頻帶改變發光二極體101之數量,亦可使針對目標區域之一個波長頻帶的光之強度與其他波長頻帶的光之強度彼此不同。 Furthermore, the number of the plurality of light-emitting diodes 101 does not have to be the same between the types, and the number of the light-emitting diodes 101 may be larger than the number of the other types of the light-emitting diodes 101. By changing the number of the light-emitting diodes 101 for each wavelength band as described above, the intensity of light for one wavelength band of the target region and the intensity of light for other wavelength bands can be made different from each other.

又,影像感測器40之光譜靈敏度特性,並不一定要限定於圖7(a)、圖8及圖9所示者,亦可為其他特性。又,彩色濾光片之光譜透 射率特性及濾波器50之光譜透射率特性亦不一定要限定於圖7(b)及圖7(c)所示者,亦可為其他特性。 Further, the spectral sensitivity characteristics of the image sensor 40 are not necessarily limited to those shown in FIGS. 7(a), 8 and 9, and may be other characteristics. Also, the spectrum of the color filter is transparent. The luminescence characteristics and the spectral transmittance characteristics of the filter 50 are not necessarily limited to those shown in Figs. 7(b) and 7(c), and may be other characteristics.

又,切換機構51之構成並不一定要限定於圖5(a)、(b)所示之構成,例如亦可為使用齒輪使移動板520移動之構成。又,亦可省略濾波器50。 Further, the configuration of the switching mechanism 51 is not necessarily limited to the configuration shown in FIGS. 5(a) and 5(b), and may be, for example, a configuration in which the moving plate 520 is moved using a gear. Further, the filter 50 may be omitted.

又,發光二極體101之數量及配置並不一定要限定於圖1(c)所示者,亦可以其他數量及配置將發光二極體101配置於攝影裝置1。 Further, the number and arrangement of the light-emitting diodes 101 are not necessarily limited to those shown in FIG. 1(c), and the light-emitting diodes 101 may be disposed in the photographing device 1 in other numbers and arrangements.

又,於上述實施形態中,攝影裝置1係藉由無線通訊向外部裝置2發訊,但攝影裝置1亦可藉由有線通訊向外部裝置2發訊。或者亦可預先將攝影影像記錄於安裝於攝影裝置1之記憶卡,並將該記憶卡自攝影裝置1卸下後安裝於外部裝置2,藉此將攝影影像擷取至外部裝置2。 Further, in the above embodiment, the photographing apparatus 1 transmits to the external apparatus 2 by wireless communication, but the photographing apparatus 1 can also transmit to the external apparatus 2 by wired communication. Alternatively, the captured image may be recorded in advance on the memory card attached to the photographing device 1, and the memory card may be removed from the photographing device 1 and then attached to the external device 2, whereby the captured image may be captured to the external device 2.

又,於上述實施形態中,攝影裝置1係設置於建築物等之外壁或屋頂之構造物、電線桿等,但攝影裝置1之設置場所並不限定於此。例如亦可將攝影裝置1設置於交通標誌,或者亦可將攝影裝置1之構成一體地包含於路燈等。 Further, in the above-described embodiment, the photographing apparatus 1 is installed on a wall such as a building or a roof structure, a utility pole, or the like, but the installation location of the photographing apparatus 1 is not limited thereto. For example, the photographing device 1 may be installed in a traffic sign, or the configuration of the photographing device 1 may be integrally included in a street lamp or the like.

再者,於上述實施形態中,雖於圖6之步驟S12中將所有發光二極體101點亮,但根據設置攝影裝置1之場所等攝影裝置1之使用狀態,可假定為相較於使3種發光二極體101全部點亮,僅使既定種類之發光二極體101點亮較能抑制消耗電力並取得適合監視之攝影影像的情形。例如,在對離設置位置相對較近且亦不太需要照明光強度之場所進行拍攝時,可能存在僅使影像感測器40之靈敏度較高之波長頻帶的發光二極體101點亮,比使所有發光二極體101點亮之情形更能取得更適合監視之攝影影 像。考慮到此方面,使用者亦可適當設定使哪種發光二極體101點亮。 Further, in the above-described embodiment, all of the light-emitting diodes 101 are turned on in step S12 of Fig. 6. However, depending on the state of use of the image pickup apparatus 1 such as the location where the image pickup apparatus 1 is installed, it can be assumed that All of the three types of light-emitting diodes 101 are turned on, and only a predetermined type of light-emitting diode 101 is turned on, and it is possible to suppress power consumption and obtain a photographed image suitable for monitoring. For example, when photographing a location that is relatively close to the installation position and that does not require illumination light intensity, there may be a light-emitting diode 101 that illuminates only the wavelength band having a higher sensitivity of the image sensor 40. Having all the LEDs 101 illuminated can make a more suitable photographic image for monitoring image. In view of this, the user can also appropriately set which of the light-emitting diodes 101 is lit.

於該情形時,圖6之流程圖例如可如圖10般進行變更。於圖10之流程圖中,與圖6相比,去除步驟S12,取而代之追加步驟S21~S23。於步驟S21中,判定使用者是否設定要點亮之發光二極體101之種類。若步驟S21之判定為NO,則將所有發光二極體101點亮(S22)。若步驟S21之判定為YES,則僅將經設定之發光二極體101點亮(S23)。 In this case, the flowchart of FIG. 6 can be changed, for example, as shown in FIG. In the flowchart of Fig. 10, step S12 is removed as compared with Fig. 6, and steps S21 to S23 are added instead. In step S21, it is determined whether or not the user sets the type of the light-emitting diode 101 to be lit. If the determination in step S21 is NO, all of the light-emitting diodes 101 are turned on (S22). If the determination in the step S21 is YES, only the set light-emitting diode 101 is turned on (S23).

再者,亦可以在步驟S23中點亮之發光二極體101之總強度與在步驟S22中點亮之所有發光二極體101之總強度不同之方式設定。 Furthermore, the total intensity of the light-emitting diodes 101 that are lit in step S23 may be set differently from the total intensity of all of the light-emitting diodes 101 that are turned on in step S22.

如該變更例所述,藉由讓使用者可適當設定要點亮之發光二極體101,而能夠根據設置攝影裝置1之場所等攝影裝置1之使用狀態,將最適種類之波長之光照射至目標區域,從而可取得更適合監視之攝影影像。 As described in this modification, by allowing the user to appropriately set the light-emitting diode 101 to be lit, it is possible to illuminate the optimum type of wavelength light depending on the state of use of the image pickup apparatus 1 such as the location where the image pickup apparatus 1 is installed. Go to the target area to get a more suitable photographic image for surveillance.

此外,本發明之實施形態可於申請專利範圍所示之技術性思想之範圍內適當地進行各種變更。 Further, the embodiments of the present invention can be variously modified as appropriate within the scope of the technical idea shown in the claims.

1‧‧‧攝影裝置 1‧‧‧Photographing device

10‧‧‧透鏡 10‧‧‧ lens

20‧‧‧光圈 20‧‧‧ aperture

30‧‧‧快門 30‧‧ ‧Shutter

40‧‧‧影像感測器 40‧‧‧Image Sensor

50‧‧‧濾波器 50‧‧‧ filter

51‧‧‧切換機構 51‧‧‧Switching mechanism

61‧‧‧攝影訊號處理電路 61‧‧‧Photo signal processing circuit

62‧‧‧快門驅動電路 62‧‧‧Shutter drive circuit

63‧‧‧濾波器驅動電路 63‧‧‧Filter drive circuit

64‧‧‧光圈驅動電路 64‧‧‧Aperture drive circuit

65‧‧‧LED驅動電路 65‧‧‧LED drive circuit

66‧‧‧檢測訊號處理電路 66‧‧‧Detection signal processing circuit

67‧‧‧控制部 67‧‧‧Control Department

68‧‧‧記憶部 68‧‧‧Memory Department

69‧‧‧通訊部 69‧‧‧Communication Department

70‧‧‧電源電路 70‧‧‧Power circuit

101‧‧‧發光二極體 101‧‧‧Lighting diode

102‧‧‧照度感測器 102‧‧‧illuminance sensor

Claims (8)

一種攝影裝置,其特徵在於具備:影像感測器;透鏡,其使來自目標區域之光於上述影像感測器成像;及照明光源,其對上述目標區域進行照明;上述照明光源,具備發光強度為波峰之波峰波長彼此不同且各個波峰波長包含於紅外之波長頻帶的複數種發光二極體。 A photographic device, comprising: an image sensor; a lens for imaging light from a target area to image the image sensor; and an illumination source for illuminating the target area; the illumination source having an illumination intensity A plurality of light-emitting diodes in which the peak wavelengths of the peaks are different from each other and the respective peak wavelengths are included in the infrared wavelength band. 一種攝影裝置,其特徵在於:上述複數個發光二極體,分別係以峰值之5%之發光強度的短波長側之波長為可見光頻帶之上限以上之方式設定發光光譜。 An imaging apparatus is characterized in that the plurality of light-emitting diodes each set an emission spectrum such that a wavelength on a short-wavelength side of an emission intensity of 5% of the peak value is equal to or higher than an upper limit of a visible light band. 如申請專利範圍第1或2項之攝影裝置,其中,上述影像感測器係P型矽基板之CMOS影像感測器。 The photographic device of claim 1 or 2, wherein the image sensor is a CMOS image sensor of a P-type 矽 substrate. 如申請專利範圍第1或2項之攝影裝置,其中,上述影像感測器係可生成彩色影像之彩色影像感測器。 The photographic device of claim 1 or 2, wherein the image sensor is a color image sensor capable of generating a color image. 如申請專利範圍第3項之攝影裝置,其中上述影像感測器係可生成彩色影像之彩色影像感測器。 The photographic device of claim 3, wherein the image sensor is a color image sensor capable of generating a color image. 如申請專利範圍4項之攝影裝置,其具備:檢測器,其對目標區域之照度進行檢測;濾波器,其將紅外光去除;及切換機構,其使上述濾波器相對被上述透鏡擷取至上述影像感測器之光之光路插拔;於藉由上述檢測器檢測出之上述照度未達既定之閾值之情形時,使 上述濾波器自上述光路退避,並且使上述發光二極體點亮;於藉由上述檢測器檢測出之上述照度為上述閾值以上之情形時,將上述濾波器插入至上述光路,並且使上述發光二極體熄滅。 A photographing apparatus according to claim 4, comprising: a detector that detects illumination of a target area; a filter that removes infrared light; and a switching mechanism that causes the filter to be relatively captured by the lens to Inserting and removing the optical path of the light of the image sensor; when the illuminance detected by the detector does not reach a predetermined threshold, The filter is evacuated from the optical path, and the light-emitting diode is turned on. When the illuminance detected by the detector is equal to or higher than the threshold, the filter is inserted into the optical path, and the light is emitted. The diode is extinguished. 如申請專利範圍第5項之攝影裝置,其具備:檢測器,其對目標區域之照度進行檢測;濾波器,其將紅外光去除;及切換機構,其使上述濾波器相對被上述透鏡擷取至上述影像感測器之光之光路插拔;於藉由上述檢測器而檢測出之上述照度未達既定之閾值之情形時,使上述濾波器自上述光路退避,並且使上述發光二極體點亮;於藉由上述檢測器檢測出之上述照度為上述閾值以上之情形時,將上述濾波器插入至上述光路,並且使上述發光二極體熄滅。 A photographing apparatus according to claim 5, comprising: a detector that detects illumination of a target area; a filter that removes infrared light; and a switching mechanism that causes the filter to be relatively captured by the lens Inserting and removing the optical path of the light to the image sensor; and when the illuminance detected by the detector does not reach a predetermined threshold, the filter is retracted from the optical path, and the light emitting diode is caused When the illuminance detected by the detector is equal to or greater than the threshold value, the filter is inserted into the optical path, and the light-emitting diode is turned off. 一種影像管理系統,其具備:申請專利範圍第1至7項中任一項之攝影裝置;及外部裝置,其藉由通訊自上述攝影裝置取得以上述攝影裝置拍得之攝影影像。 An image management system comprising: the photographing apparatus according to any one of claims 1 to 7; and an external device that obtains a photographed image taken by the photographing apparatus from the photographing apparatus by communication.
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