TW201741071A - Polishing apparatus - Google Patents
Polishing apparatus Download PDFInfo
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- TW201741071A TW201741071A TW106103734A TW106103734A TW201741071A TW 201741071 A TW201741071 A TW 201741071A TW 106103734 A TW106103734 A TW 106103734A TW 106103734 A TW106103734 A TW 106103734A TW 201741071 A TW201741071 A TW 201741071A
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- polishing
- load
- head
- control
- driving mechanism
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- 238000005498 polishing Methods 0.000 title claims abstract description 163
- 239000000463 material Substances 0.000 claims description 14
- 238000005259 measurement Methods 0.000 abstract description 4
- 239000003082 abrasive agent Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 description 6
- 238000007517 polishing process Methods 0.000 description 5
- 238000001514 detection method Methods 0.000 description 3
- 230000008602 contraction Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000006399 behavior Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Abstract
Description
本申請案，是依據2016年2月5日提出申請之日本第2016-021312號專利申請案、及2016年12月27日提出申請之日本第2016-254114號專利申請案，並主張前述兩件申請案作為優先權，該兩件優先權的所有內容，藉由參考而編寫入本申請案。 This application is based on the Japanese Patent Application No. 2016-021312 filed on Feb. 5, 2016, and the Japanese Patent Application No. 2016-254114 filed on Dec. 27, 2016, and claims the aforementioned two The application is a priority and all the contents of the two priorities are incorporated into the application by reference.
本發明關於研磨裝置。 The present invention relates to a polishing apparatus.
傳統以來，就用來研磨由半導體材料所形成之晶圓表面等的研磨裝置而言，譬如已知有如同國際公開2013/038573號所記載的「使用被旋轉驅動之研磨墊」的研磨裝置。一般而言，研磨墊被設在旋轉軸的前端，含有旋轉機構及旋轉軸的研磨墊，是透過彈性機構由頭部所支承。頭部，是透過驅動機構由裝置本體所支承。 Conventionally, as a polishing apparatus for polishing a wafer surface or the like formed of a semiconductor material, for example, a polishing apparatus using "a polishing pad that is rotationally driven" as disclosed in International Publication No. 2013/038573 is known. Generally, the polishing pad is provided at the tip end of the rotating shaft, and the polishing pad including the rotating mechanism and the rotating shaft is supported by the head through the elastic mechanism. The head is supported by the device body through a drive mechanism.
就驅動機構的控制方法而言，譬如可採用如日本特開昭59-219152號公報所記載之「組合了位置控制 與荷重控制」的方法。該控制方法，為以下所述的方法：在研磨墊接觸於晶圓且達成研磨時的目標荷重之前，依據該研磨墊的位置(座標)來控制驅動機構(位置控制)，當達成前述目標荷重後，則依據產生於研磨墊與晶圓間之接觸面的壓力，對驅動機構進行控制(荷重控制)。當研磨時的目標荷重達成時之頭部的位置(Z座標)，是依據研磨墊之研磨面的面積、與彈性機構的彈簧常數(spring constant)所決定。 For the control method of the drive mechanism, for example, the position control can be combined as described in Japanese Laid-Open Patent Publication No. 59-219152. And load control method. The control method is a method of controlling a driving mechanism (position control) according to a position (coordinate) of the polishing pad before the polishing pad contacts the wafer and achieving a target load at the time of polishing, when the target load is achieved. Then, the driving mechanism is controlled (load control) according to the pressure generated at the contact surface between the polishing pad and the wafer. The position (Z coordinate) of the head when the target load at the time of polishing is achieved is determined by the area of the polishing surface of the polishing pad and the spring constant of the elastic mechanism.
施加於研磨墊的荷重，譬如是由設在研磨墊之旋轉軸上方的測力計(load cell)所測得。測量的順序如以下所述。亦即，使頭部沿著Z座標軸(垂直方向軸)下降(朝接近晶圓的方向移動)，使研磨墊的研磨面抵接於晶圓。伴隨於此，彈性機構(螺旋彈簧)將產生變形，相對於頭部，使研磨墊及旋轉軸朝上方相對移動。如此一來，旋轉軸的上端部壓附於測力計。然後，測力計內的應變計(strain gage)產生變形，測量「旋轉軸的上端部按壓應變計的力量」。然後，為了使「由測力計所測得的力」形成目標荷重，調整頭部的Z座標值。 The load applied to the polishing pad is measured, for example, by a load cell disposed above the axis of rotation of the polishing pad. The order of measurement is as follows. That is, the head is lowered along the Z coordinate axis (vertical axis) (moving toward the wafer), and the polishing surface of the polishing pad is brought into contact with the wafer. Along with this, the elastic mechanism (coil spring) is deformed, and the polishing pad and the rotating shaft are relatively moved upward with respect to the head. As a result, the upper end portion of the rotating shaft is pressed against the dynamometer. Then, the strain gage in the dynamometer is deformed, and the "the force at which the upper end of the rotating shaft presses the strain gauge" is measured. Then, in order to make the "force measured by the dynamometer" form a target load, the Z coordinate value of the head is adjusted.
在如同以上的研磨裝置中，當執行荷重控制時，一旦研磨體通過「存有微小的突起和異物的場所」，研磨墊將急遽地朝上方移動(被頂起)，使測力計的測量值急遽上升。追隨著這種急遽的荷重變化執行高精確度的荷重控制，一般來說是困難的。 In the polishing apparatus like the above, when the load control is performed, once the polishing body passes through the "place where minute projections and foreign matter are present", the polishing pad will move up (uplifted) sharply to measure the dynamometer. The value is rising rapidly. It is generally difficult to follow this impulsive load change to perform high-accuracy load control.
除此之外，在這樣的研磨裝置中，當從位置 控制切換成荷重控制時，起因於彈性體的伸縮，有時會產生對研磨時之目標荷重的過衝(overshoot)。一旦產生過衝，將對晶圓的切入量(研磨深度)產生偏差，結果將導致晶圓的研磨精度低落。在執行荷重控制的研磨裝置中，有關於降低對目標荷重之過衝的技術，譬如日本特開2003-94328號公報、日本特開2003-326456號公報、日本特表2005-514780號公報、日本特開2007-181895號公報及日本特開2015-36165號公報所記載。然而，無論在哪一個文獻中，針對降低「起因於彈性機構之伸縮的過衝」的方法，沒有任何相關的檢討。 In addition to this, in such a grinding device, when from the position When the control is switched to the load control, an overshoot of the target load at the time of polishing may occur due to the expansion and contraction of the elastic body. Once an overshoot occurs, the wafer's cut-in amount (grinding depth) will be deviated, resulting in a low wafer grinding accuracy. In the polishing apparatus that performs the load control, there is a technique for reducing the overshoot of the target load, for example, Japanese Laid-Open Patent Publication No. 2003-94328, Japanese Patent Laid-Open No. 2003-326456, Japanese Patent Publication No. 2005-514780, and Japan. JP-A-2007-181895 and JP-A-2015-36165. However, no matter which document, there is no relevant review for the method of reducing the "overshoot caused by the expansion and contraction of the elastic mechanism".
本案的發明人，反覆地深入檢討的結果，發現將彈性機構設於研磨墊的旋轉軸與測力計之間的作法有效。 The inventor of the present case repeatedly and intensively reviewed the results and found that it is effective to provide the elastic mechanism between the rotating shaft of the polishing pad and the dynamometer.
此外，本案的發明人發現：基於彈性機構的彈簧常數，藉由在未發生過衝的位置，從位置控制切換成荷重控制，可消除該過衝。 Further, the inventors of the present invention have found that the overshoot can be eliminated by switching the position control to the load control based on the spring constant of the elastic mechanism by the position where no overshoot occurs.
本發明，是基於上述的見解所發展的發明。亦即，本發明的目的是提供：實質上，測力計可僅量測恆定時之穩定荷重的研磨裝置。 The present invention is an invention developed based on the above findings. That is, it is an object of the present invention to provide a polishing apparatus in which a dynamometer can measure only a constant load at a constant level.
除此之外，本發明的另一個目的是提供：可避免當從位置控制切換成荷重控制時所產生之「對研磨時 之目標荷重的過衝」的研磨裝置。 In addition, another object of the present invention is to provide a "avoidance of grinding" when switching from position control to load control A grinding device for the overshoot of the target load.
本發明為研磨裝置，其特徵為具備：保持部，用來保持被研磨材；研磨體，用來研磨被前述保持部所保持的被研磨材；頭部，隔著彈性機構支承前述研磨體；驅動機構，促使前述頭部朝Z座標方向移動；控制部，連接於前述驅動機構，用來控制前述驅動機構，在前述頭部安裝有：用來測量施加於前述研磨體之荷重的荷重測量裝置，前述荷重測量裝置，是透過前述彈性機構而連結於前述研磨體。 The present invention provides a polishing apparatus comprising: a holding portion for holding a material to be polished; a polishing body for polishing a material to be held held by the holding portion; and a head portion for supporting the polishing body via an elastic mechanism; a driving mechanism for moving the head toward the Z coordinate direction; a control unit connected to the driving mechanism for controlling the driving mechanism, wherein the head is mounted with a load measuring device for measuring a load applied to the grinding body The load measuring device is coupled to the polishing body through the elastic mechanism.
根據本發明，可提供一種：即使研磨墊通過「晶圓的表面存在有微小的突起和異物的場所」，藉由彈性機構的存在，荷重測量裝置(測力計)可實質上僅量測恆定時之穩定荷重的研磨裝置。 According to the present invention, it is possible to provide a load measuring device (dynamometer) which can be measured substantially only by the presence of an elastic mechanism even if the polishing pad passes through a "place where minute protrusions and foreign matter are present on the surface of the wafer". A stable grinding device at that time.
在以上的研磨裝置中，前述控制部最好是：當藉由前述驅動機構促使前述頭部下降時，一開始是藉由位置控制來控制前述驅動機構，在將成為目標荷重時之Z座標的位置的前方位置起，切換成荷重控制，而控制前述驅動機構。 In the above polishing apparatus, it is preferable that the control unit controls the driving mechanism by position control when the head is lowered by the driving mechanism, and the Z coordinate when the target load is to be used. From the front position of the position, switching to load control, and controlling the aforementioned drive mechanism.
在該場合中，可提供一種：可避免當從位置控制切換成荷重控制時所產生之「對研磨時之目標荷重的過衝」的研磨裝置。 In this case, it is possible to provide a polishing apparatus capable of avoiding "overshoot of the target load at the time of polishing" which is generated when switching from the position control to the load control.
前述彈性機構最好是具有螺旋彈簧。在該場 合中，能以低成本實現彈性機構。 The aforementioned elastic mechanism preferably has a coil spring. In the field In the middle, the elastic mechanism can be realized at low cost.
或者，本發明為研磨裝置，其特徵為具備：保持部，用來保持被研磨材；研磨體，用來研磨被前述保持部所保持的被研磨材；頭部，隔著彈性機構支承前述研磨材；驅動機構，促使前述頭部朝Z座標方向移動；控制部，連接於前述驅動機構，用來控制前述驅動機構，前述控制部，當藉由前述驅動機構促使前述頭部下降時，一開始是藉由位置控制來控制前述驅動機構，在將成為目標荷重時之Z座標的位置的前方位置起，切換成荷重控制，而控制前述驅動機構。 Alternatively, the present invention provides a polishing apparatus characterized by comprising: a holding portion for holding a material to be polished; a polishing body for polishing the material to be held held by the holding portion; and a head portion for supporting the grinding portion via an elastic mechanism a driving mechanism for moving the head toward the Z coordinate direction; a control unit connected to the driving mechanism for controlling the driving mechanism, wherein the control unit starts when the head is lowered by the driving mechanism The drive mechanism is controlled by position control, and the load mechanism is switched to the front position of the Z coordinate when the target load is reached, and the drive mechanism is controlled.
根據本發明，可提供一種：可避免當從位置控制切換成荷重控制時所產生之「對研磨時之目標荷重的過衝」的研磨裝置。 According to the present invention, it is possible to provide a polishing apparatus capable of avoiding "overshoot of a target load at the time of polishing" which is generated when switching from position control to load control.
根據本發明，可提供一種：即使研磨墊通過「晶圓的表面存在有微小的突起和異物的場所」，藉由彈性機構的存在，荷重測量裝置(測力計)可實質上僅量測恆定時之穩定荷重的研磨裝置。 According to the present invention, it is possible to provide a load measuring device (dynamometer) which can be measured substantially only by the presence of an elastic mechanism even if the polishing pad passes through a "place where minute protrusions and foreign matter are present on the surface of the wafer". A stable grinding device at that time.
此外，根據本發明，可提供一種：可避免當從位置控制切換成荷重控制時所產生之「對研磨時之目標荷重的過衝」的研磨裝置。 Further, according to the present invention, it is possible to provide a polishing apparatus capable of avoiding "overshoot of a target load at the time of polishing" which is generated when switching from position control to load control.
W‧‧‧被研磨材(晶圓) W‧‧‧Watted material (wafer)
10‧‧‧研磨體 10‧‧‧ grinding body
11‧‧‧心軸 11‧‧‧ mandrel
12‧‧‧研磨墊 12‧‧‧ polishing pad
20‧‧‧裝置本體 20‧‧‧ device body
21‧‧‧塔柱 21‧‧ ‧ tower
21a‧‧‧一側面 21a‧‧‧ side
22‧‧‧臂 22‧‧‧ Arm
23‧‧‧基座 23‧‧‧ Pedestal
23a‧‧‧上表面 23a‧‧‧Upper surface
24‧‧‧驅動機構 24‧‧‧ drive mechanism
30‧‧‧頭部 30‧‧‧ head
31‧‧‧研磨體支承構件 31‧‧‧Abrasive support member
31a‧‧‧凸緣部 31a‧‧‧Flange
32‧‧‧彈性機構 32‧‧‧Flexible mechanism
32a‧‧‧加壓彈簧 32a‧‧‧Pressure spring
32b‧‧‧平衡用彈簧 32b‧‧‧balance spring
32c‧‧‧平衡用彈簧 32c‧‧‧balance spring
33‧‧‧測力計(荷重測量裝置) 33‧‧‧ dynamometer (load measuring device)
35‧‧‧蓋 35‧‧‧ Cover
35a‧‧‧貫穿孔 35a‧‧‧through holes
50‧‧‧控制部 50‧‧‧Control Department
51‧‧‧偵測部 51‧‧‧Detection Department
52‧‧‧記憶部 52‧‧‧Memory Department
53‧‧‧判定部 53‧‧‧Decision Department
54‧‧‧壓力評價部 54‧‧‧ Pressure Evaluation Department
60‧‧‧工作台 60‧‧‧Workbench
60a‧‧‧載置面 60a‧‧‧Loading surface
61‧‧‧支承塊 61‧‧‧Support block
62‧‧‧突條 62‧‧‧ 突条
70‧‧‧底座 70‧‧‧Base
71‧‧‧平行溝 71‧‧‧ parallel ditch
100‧‧‧研磨裝置 100‧‧‧ grinding device
第1圖：是顯示本發明第1實施形態之研磨裝置的概略立體圖。 Fig. 1 is a schematic perspective view showing a polishing apparatus according to a first embodiment of the present invention.
第2圖：是顯示第1圖之研磨裝置的頭部內部構造的概略立體圖。 Fig. 2 is a schematic perspective view showing the internal structure of the head of the polishing apparatus of Fig. 1.
第3圖：是顯示從第2圖的左上方，觀看第1圖之研磨裝置的頭部的概略側視圖。 Fig. 3 is a schematic side view showing the head of the polishing apparatus of Fig. 1 viewed from the upper left side of Fig. 2.
第4圖：是在「平行於第3圖的紙面，且通過心軸(spindle)之軸心」的平面中，第3圖之頭部的概略剖面圖。 Fig. 4 is a schematic cross-sectional view of the head of Fig. 3 in a plane parallel to the paper surface of Fig. 3 and passing through the axis of the spindle.
第5圖：是概略地顯示第1圖之研磨裝置的控制裝置的塊狀圖。 Fig. 5 is a block diagram schematically showing a control device of the polishing apparatus of Fig. 1.
第6圖：是顯示傳統的研磨裝置中，施加於研磨體之荷重的圖表。 Fig. 6 is a graph showing the load applied to the polishing body in the conventional polishing apparatus.
第7圖：是顯示在本實施形態的研磨裝置中，施加於研磨體之荷重的圖表。 Fig. 7 is a graph showing the load applied to the polishing body in the polishing apparatus of the embodiment.
以下，參考圖面詳細地說明本發明的其中一種實施形態。 Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings.
第1圖，是顯示本發明其中一種實施形態之研磨裝置100的概略立體圖。如第1圖所示，本實施形態的研磨裝置100具備：底座70；工作台60，被設在底座70上，作為用來保持被研磨材(晶圓W)的保持部；研 磨體10，用來研磨工作台60所保持的被研磨材；頭部30，隔著彈性機構32(請參考第2圖)支承研磨體10；驅動機構24，使頭部30相對於裝置本體20朝Z座標方向(第1圖中的上下方向)移動；控制部50，連接於驅動機構24，用來控制該驅動機構24。 Fig. 1 is a schematic perspective view showing a polishing apparatus 100 according to an embodiment of the present invention. As shown in Fig. 1, the polishing apparatus 100 of the present embodiment includes a base 70, and a table 60 is provided on the base 70 as a holding portion for holding a workpiece (wafer W). The grinding body 10 is used to grind the material to be polished held by the table 60; the head 30 supports the grinding body 10 via the elastic mechanism 32 (please refer to FIG. 2); the driving mechanism 24 makes the head 30 relative to the device body. 20 moves in the Z coordinate direction (up and down direction in FIG. 1); the control unit 50 is connected to the drive mechanism 24 for controlling the drive mechanism 24.
其中，工作台(保持部)60，是用來保持作為被研磨材之圓盤狀的晶圓W的構件。工作台60，是由「被配置於底座70上之長方體狀的支承塊61」所支承。 Among them, the table (holding portion) 60 is a member for holding the wafer W as a disk-shaped material to be polished. The table 60 is supported by "a rectangular parallelepiped support block 61 disposed on the base 70".
此外，研磨體10，是用來研磨工作台60所保持之晶圓W的構件。如第1圖所示，該研磨體10具有：心軸11；被安裝於該心軸11之一端部(第1圖的下端部)的研磨墊12。本實施形態的研磨墊12，採用直徑為10mm的圓盤狀物。 Further, the polishing body 10 is a member for polishing the wafer W held by the table 60. As shown in Fig. 1, the polishing body 10 has a mandrel 11 and a polishing pad 12 attached to one end portion (the lower end portion of Fig. 1) of the mandrel 11. In the polishing pad 12 of the present embodiment, a disk having a diameter of 10 mm is used.
本實施形態的裝置本體20，是隔著「使頭部30相對於晶圓W形成相對移動」的驅動機構24，支承該頭部30的構件。如第1圖所示，裝置本體20具有：長方體狀的塔柱(column)21；其中一端隔著驅動機構24支承於塔柱21的一側面21a上之圓柱狀的臂22；在上表面23a支承著塔柱21之長方體狀的基座23。在臂22的另一端安裝有頭部30，而形成藉由驅動機構24使臂22在塔柱21的前述一側面21a上，朝垂直方向(第1圖的Z座標方向)移動。如此一來，可執行頭部30於Z座標方向的定位。 The apparatus main body 20 of the present embodiment is a member that supports the head portion 30 via a drive mechanism 24 that "moves the head portion 30 relative to the wafer W." As shown in Fig. 1, the apparatus main body 20 has a rectangular column 21; a cylindrical arm 22 whose one end is supported by a driving mechanism 24 on one side surface 21a of the column 21; on the upper surface 23a A rectangular parallelepiped base 23 supporting the column 21 is supported. The head 30 is attached to the other end of the arm 22, and the arm 22 is moved by the drive mechanism 24 on the one side surface 21a of the tower 21 in the vertical direction (the Z coordinate direction of Fig. 1). In this way, the positioning of the head 30 in the Z coordinate direction can be performed.
此外，本實施形態的塔柱21，可藉由已知的 驅動機構，在基座23上朝臂22的長度方向(第1圖的X座標方向)移動，如此一來，可執行頭部30於X座標方向的定位。 In addition, the column 21 of the present embodiment can be known by The drive mechanism moves on the base 23 in the longitudinal direction of the arm 22 (the X coordinate direction in Fig. 1), so that the positioning of the head 30 in the X coordinate direction can be performed.
此外，如第1圖所示，底座70，是用來支承工作台60的支承塊61及裝置本體20的構件。具體地說，工作台60及支承塊61，在底座70的上表面，被配置在對應於研磨體10的位置。本實施形態，在支承塊61的下表面設有：卡合於「沿著第1圖的Y座標方向刻畫於底座70上之2條平行溝71」的突條62，而形成該支承塊61可沿著該2條平行溝71移動。如此一來，可執行工作台60於Y座標方向的定位，亦即，頭部30相對於工作台60在Y座標方向的定位。本實施形態的工作台60，具有譬如直徑200mm的載置面60a。 Further, as shown in Fig. 1, the base 70 is a member for supporting the support block 61 of the table 60 and the apparatus body 20. Specifically, the table 60 and the support block 61 are disposed on the upper surface of the base 70 at a position corresponding to the polishing body 10. In the present embodiment, the lower surface of the support block 61 is provided with a protrusion 62 that is engaged with "two parallel grooves 71 drawn on the base 70 in the Y coordinate direction of Fig. 1" to form the support block 61. It is movable along the two parallel grooves 71. In this way, the positioning of the table 60 in the Y coordinate direction, that is, the positioning of the head 30 relative to the table 60 in the Y coordinate direction, can be performed. The table 60 of the present embodiment has a mounting surface 60a having a diameter of 200 mm.
接下來，針對頭部30構造進行更進一步的說明。第2圖，是顯示第1圖所示之研磨裝置100的頭部30之內部構造的概略立體圖，第3圖，是從第2圖的左上方觀看第1圖所示之研磨裝置100的頭部30時的概略側視圖，第4圖，是在「平行於第3圖的紙面，且通過心軸11之軸心」的平面中，第3圖之頭部30的概略剖面圖。 Next, the head 30 configuration will be further explained. Fig. 2 is a schematic perspective view showing the internal structure of the head portion 30 of the polishing apparatus 100 shown in Fig. 1, and Fig. 3 is a view showing the head of the polishing apparatus 100 shown in Fig. 1 from the upper left side of Fig. 2 A schematic side view of the portion 30, and Fig. 4 is a schematic cross-sectional view of the head portion 30 of Fig. 3 in a plane "parallel to the paper surface of Fig. 3 and passing through the axis of the mandrel 11".
如第2圖~第4圖所示，本實施形態的頭部30，是用來支承研磨體10的構件。該頭部30，隔著彈性機構32被支承，且具有「用來支承研磨體10之心軸11」的研磨體支承構件31。在研磨體支承構件31的內 部，設有驅動心軸11旋轉的已知驅動機構(圖面中未顯示)，而形成：以所期望的旋轉速度使研磨體10旋轉。如第4圖所示，研磨體支承構件31，呈現「在側面上具有凸緣部31a」的圓柱狀，在該凸緣部31a的上方設有：固定於臂22，包圍研磨體支承構件31的蓋35。如第2圖所示，蓋35的外形為八角柱狀。在蓋35，於上下方向形成有貫穿孔35a，在該貫穿孔35a內，研磨體支承構件31可朝上下方向移動。 As shown in FIGS. 2 to 4, the head portion 30 of the present embodiment is a member for supporting the polishing body 10. The head portion 30 is supported by an elastic mechanism 32 and has a polishing body supporting member 31 for supporting the mandrel 11 of the polishing body 10. Inside the grinding body support member 31 The portion is provided with a known drive mechanism (not shown in the drawing) for driving the rotation of the spindle 11, and is formed to rotate the polishing body 10 at a desired rotational speed. As shown in Fig. 4, the polishing body supporting member 31 has a columnar shape having a flange portion 31a on the side surface, and is provided above the flange portion 31a to be fixed to the arm 22 to surround the polishing body supporting member 31. Cover 35. As shown in Fig. 2, the outer shape of the cover 35 is an octagonal column shape. In the lid 35, a through hole 35a is formed in the vertical direction, and the polishing body supporting member 31 is movable in the vertical direction in the through hole 35a.
此外，如第2圖所示，本實施形態的彈性機構32是由以下所構成：1個加壓彈簧32a，與研磨體支承構件31一起朝下方對研磨體10加壓；2個平衡用彈簧32b、32c，用來支承研磨體支承構件31本身的重量。加壓彈簧32a被設在研磨體支承構件31的上端，而形成：沿著研磨體10之心軸11的軸心產生彈力。此外，平衡用彈簧32b、32c，在加壓彈簧32a的Y軸方向兩側，與該加壓彈簧32a並列地設在蓋35的上表面。在本實施形態中，加壓彈簧32a的上端連結於測力計(荷重測量裝置)33，而形成透過該加壓彈簧32a，測量施加於研磨體10的荷重。 Further, as shown in Fig. 2, the elastic mechanism 32 of the present embodiment is constituted by one pressurizing spring 32a which presses the polishing body 10 downward together with the polishing body supporting member 31; two balancing springs 32b, 32c for supporting the weight of the grinding body supporting member 31 itself. The pressing spring 32a is provided at the upper end of the polishing body supporting member 31 to form an elastic force along the axis of the spindle 11 of the polishing body 10. Further, the balance springs 32b and 32c are provided on the upper surface of the cover 35 in parallel with the pressurizing spring 32a on both sides in the Y-axis direction of the pressurizing spring 32a. In the present embodiment, the upper end of the pressure spring 32a is connected to the dynamometer (load measuring device) 33, and the pressure applied to the polishing body 10 is measured by passing through the pressure spring 32a.
第5圖，為連接於第1圖所示之研磨裝置100的控制裝置50的概略塊狀圖。如第5圖所示，本實施形態的控制裝置50具有：偵測部51，用來偵測「研磨體10之心軸11的軸心」與「工作台60之旋轉的中心」之間的相對位置關係；記憶部52，用來記憶從位置控制朝荷重 控制切換時，研磨體支承構件31的Z座標；判定部53，用來判定研磨體支承構件31是否已到達前述Z座標；壓力評價部54，依據由偵測部51所偵測的相對位置關係，來評價研磨墊12與晶圓W之間的接觸面積，並依據該接觸面積與測力計33的測量值，評價施加於該晶圓W的壓力是否適當。 Fig. 5 is a schematic block diagram of a control device 50 connected to the polishing apparatus 100 shown in Fig. 1. As shown in FIG. 5, the control device 50 of the present embodiment has a detecting portion 51 for detecting "the axis of the spindle 11 of the polishing body 10" and the "center of the rotation of the table 60". Relative positional relationship; memory part 52 for remembering from position control to load When the control is switched, the Z coordinate of the polishing body supporting member 31; the determining portion 53 is for determining whether or not the polishing body supporting member 31 has reached the Z coordinate; and the pressure evaluating portion 54 is based on the relative positional relationship detected by the detecting portion 51. The contact area between the polishing pad 12 and the wafer W is evaluated, and the pressure applied to the wafer W is evaluated according to the contact area and the measured value of the load cell 33.
如同先前所述，本實施形態的頭部30，是隔著彈性機構32支承研磨體支承構件31。一旦因「該彈性機構32所產生的反彈力」而促使研磨體支承構件31移動至「預設的目標荷重施加於晶圓W的位置」時，將如同先前所述，導致「對該目標荷重的過衝(過度移動、過度深入)」產生。該過衝的舉動，可從顯示「在傳統的研磨裝置中，施加於研磨體10的荷重」之第6圖的圖表得知。該圖表，是以時序顯示反覆執行3次後述的步驟時施加於研磨體10的荷重，該步驟是使研磨體10從晶圓W的緣部沿著X座標方向直線狀地移動至另一側緣部並進行研磨。在本實施形態中，是藉由預先實驗來測量使研磨體支承構件31移動至「預設的目標荷重施加於晶圓W的位置」時將產生何種程度的過衝，並將其記憶於記憶部52。 As described above, the head portion 30 of the present embodiment supports the polishing body support member 31 via the elastic mechanism 32. When the "grinding force generated by the elastic mechanism 32" causes the polishing body supporting member 31 to move to the "predetermined target load applied to the position of the wafer W", as described above, "the target load is caused" Overshoot (over-moving, over-depth) is produced. The behavior of this overshoot can be seen from the graph of Fig. 6 showing "the load applied to the polishing body 10 in the conventional polishing apparatus". This graph is a load applied to the polishing body 10 when the steps described later are repeatedly performed three times in a time series display. This step is to linearly move the polishing body 10 from the edge of the wafer W in the X coordinate direction to the other side. The edge is polished. In the present embodiment, it is measured by an experiment in advance how much overshoot occurs when the polishing body supporting member 31 is moved to the "position at which the predetermined target load is applied to the wafer W", and is memorized. Memory unit 52.
具體地說，是假定在第1圖所示的研磨裝置100中，執行位置控制直到達成研磨時之目標荷重的場合。在該場合中，如第6圖所示，相對於該目標荷重，產生了約0.4N的過衝。為了抑制該過衝，驅動機構24形成 以下的控制：在研磨裝置100中，在較「目標荷重達成時的位置(Z座標)」更前方的位置(前方位置)起，切換成荷重控制。所謂的前方位置，譬如是以(執行位置控制直到達成目標荷重的場合中的過衝量(N))÷(彈性機構32的總彈簧常數(N/mm))所計算。本實施形態之頭部30所採用的彈性機構32的總彈簧常數，為20N/mm。因此，相對於達成目標荷重時的Z座標，只要在0.4(N)/20(N/00)=20(μm)的前方，從位置控制切換成荷重控制即可。該20μm的數值被預先記憶於記憶部52。 Specifically, it is assumed that in the polishing apparatus 100 shown in Fig. 1, position control is performed until the target load at the time of polishing is achieved. In this case, as shown in Fig. 6, an overshoot of about 0.4 N is generated with respect to the target load. In order to suppress the overshoot, the drive mechanism 24 is formed The following control: In the polishing apparatus 100, the load control is switched to a position (front position) that is further forward than the position (Z coordinate) when the target load is reached. The so-called front position is calculated, for example, by the amount of overshoot (N) in the case where the position control is performed until the target load is reached (the total spring constant (N/mm) of the elastic mechanism 32). The total spring constant of the elastic mechanism 32 used in the head portion 30 of the present embodiment is 20 N/mm. Therefore, it is only necessary to switch from the position control to the load control in front of 0.4 (N) / 20 (N / 00) = 20 (μm) with respect to the Z coordinate at the time of reaching the target load. The value of 20 μm is memorized in advance in the memory unit 52.
接著，針對本實施形態的研磨裝置100進行說明。 Next, the polishing apparatus 100 of the present embodiment will be described.
首先，在研磨加工之前，如第1圖所示，使工作台60沿著「刻劃於底座70上的2條平行溝71」進行定位，使工作台60之旋轉的中心、與研磨體10之心軸11的軸心在Y軸方向上形成一致。作為被研磨材的晶圓W，使研磨對象的面朝向上方而載置於該工作台60。接著，一旦研磨裝置100被使用者啟動，塔柱21將在基座23上移動，直到「工作台60之旋轉的中心」與「研磨體10之心軸11的軸心」在第1圖的X軸方向中形成一致。此時，為了使研磨體10的研磨墊12不會與工作台60的緣部形成干涉，在初期狀態中，頭部30退避至充分的高度。 First, before the polishing process, as shown in Fig. 1, the table 60 is positioned along the "two parallel grooves 71 scribed on the base 70" to center the rotation of the table 60 and the polishing body 10. The axis of the mandrel 11 is aligned in the Y-axis direction. The wafer W as the material to be polished is placed on the table 60 with the surface to be polished facing upward. Next, once the polishing apparatus 100 is activated by the user, the column 21 is moved on the susceptor 23 until "the center of rotation of the table 60" and "the axis of the spindle 11 of the polishing body 10" are in FIG. Consistent in the X-axis direction. At this time, in order to prevent the polishing pad 12 of the polishing body 10 from interfering with the edge portion of the table 60, the head portion 30 is retracted to a sufficient height in the initial state.
然後，依據使用者的指示，研磨體10的心軸 11及工作台60的驅動機構分別啟動，研磨體10及工作台60以所期望的速度旋轉。亦即，研磨墊12與晶圓W，分別以所期望的速度旋轉。在該狀態下，頭部30藉由設在塔柱21的驅動機構24，與臂22一起朝下方移動，使研磨墊12抵接於晶圓W。在本實施形態中，為了執行平順的研磨加工，在研磨墊12抵接於晶圓W之前，對晶圓W的研磨對象面供給研磨液。 Then, according to the user's instruction, the mandrel of the grinding body 10 11 and the drive mechanism of the table 60 are activated, respectively, and the polishing body 10 and the table 60 are rotated at a desired speed. That is, the polishing pad 12 and the wafer W are respectively rotated at a desired speed. In this state, the head portion 30 is moved downward together with the arm 22 by the drive mechanism 24 provided on the column 21, and the polishing pad 12 is brought into contact with the wafer W. In the present embodiment, in order to perform the smooth polishing process, the polishing liquid is supplied to the polishing target surface of the wafer W before the polishing pad 12 abuts on the wafer W.
在本實施形態的研磨裝置100中，頭部30在「研磨墊12抵接於晶圓W」之前的移動，是依據位置控制所控制，亦即，是依據頭部30的位置(Z座標)的控制。接著，在研磨墊12抵接於晶圓W，且達成研磨時的目標荷重之前，切換成荷重控制。具體地說，相較於「達成目標荷重時之頭部30的位置(Z座標)」，在預定距離的前方(上方)，從位置控制切換成荷重控制。該預定的距離，是藉由預先的測量所求出，並記憶於記憶部52，在第6圖所示的例子中為20μm。在本實施形態的荷重控制中，為了使施加於晶圓W與研磨墊12間之接觸面的壓力(面壓)形成一定，藉由調節頭部30的位置(Z座標)，控制施加於研磨體10的荷重，亦即由測力計33所測得的荷重。 In the polishing apparatus 100 of the present embodiment, the movement of the head portion 30 before the "polishing pad 12 abuts against the wafer W" is controlled according to the position control, that is, according to the position of the head 30 (Z coordinate). control. Next, before the polishing pad 12 abuts on the wafer W and reaches the target load at the time of polishing, the load is switched to the load control. Specifically, the position control is switched to the load control in front of (above) the predetermined distance as compared with the "position (Z coordinate) of the head 30 when the target load is reached". The predetermined distance is obtained by a predetermined measurement and is stored in the memory unit 52, and is 20 μm in the example shown in Fig. 6. In the load control of the present embodiment, in order to make the pressure (face pressure) applied to the contact surface between the wafer W and the polishing pad 12 constant, the position (Z coordinate) of the head portion 30 is adjusted to control the application to the polishing. The load of the body 10, that is, the load measured by the dynamometer 33.
切換成荷重控制後，壓力評價部54，即時(real time)監看施加於晶圓W與研磨墊12間之接觸面的壓力(面壓)。該壓力是基於：透過加壓彈簧32a由測力計33所測量的荷重；依據「研磨體10之心軸11的軸 心與工作台60間之相對位置關係」所評價之研磨墊12與晶圓W之間的接觸面積。在本實施形態中，研磨墊12，是從晶圓W的上方逐漸地靠近該晶圓W，同時從晶圓W的徑向外側朝向徑向內側移動。然後，研磨墊12的一部分抵接於晶圓W，而開始該晶圓W的研磨。研磨墊12，逐漸地朝晶圓W的徑向內側移動。伴隨於此，研磨墊12的研磨面與晶圓W之間的接觸面積逐漸地增大，最終該研磨面整體接觸於晶圓W，接觸面積形成一定。在本實施形態中，為了使施加於研磨墊12與晶圓W間之接觸面的壓力(面壓)形成一定，而控制頭部30的位置(Z座標)，因此測力計33所測得的荷重，將於逐漸地增大後形成一定。 After switching to the load control, the pressure evaluation unit 54 monitors the pressure (surface pressure) applied to the contact surface between the wafer W and the polishing pad 12 in real time. The pressure is based on the load measured by the dynamometer 33 through the pressurizing spring 32a; according to the axis of the mandrel 11 of the grinding body 10 The relative positional relationship between the center and the table 60 is the contact area between the polishing pad 12 and the wafer W evaluated. In the present embodiment, the polishing pad 12 gradually moves closer to the wafer W from above the wafer W, and moves radially outward from the radially outer side of the wafer W. Then, a portion of the polishing pad 12 abuts against the wafer W, and polishing of the wafer W is started. The polishing pad 12 gradually moves toward the radially inner side of the wafer W. Along with this, the contact area between the polishing surface of the polishing pad 12 and the wafer W gradually increases, and finally the entire polishing surface contacts the wafer W, and the contact area is formed constant. In the present embodiment, the pressure (surface pressure) applied to the contact surface between the polishing pad 12 and the wafer W is constant, and the position (Z coordinate) of the head portion 30 is controlled, so that the dynamometer 33 measures The load will gradually increase and form a certain.
在研磨晶圓W時，藉由使塔柱21在基座23上移動，使研磨體10沿著X座標方向從晶圓W其中一側的周緣部直線狀地移動至另一側的周緣部。在該研磨的過程中，一旦研磨體10通過「在晶圓W的表面存有微小的突起和異物的場所」，研磨墊10將急遽地朝上方移動(被頂起)。此時，倘若不存在彈性機構32，並且將研磨體支承構件31直接連結於測力計33，將形成：測力計33的測量值急遽地上升。追隨著這種急遽的荷重變化執行高精確度的荷重控制，一般來說是困難的。 When the wafer W is polished, the polishing column 10 is linearly moved from the peripheral edge portion of one side of the wafer W to the peripheral portion of the other side in the X coordinate direction by moving the column 21 on the susceptor 23. . In the polishing process, when the polishing body 10 passes "a place where minute projections and foreign matter are present on the surface of the wafer W", the polishing pad 10 is moved up (uplifted) sharply. At this time, if the elastic mechanism 32 is not present and the polishing body support member 31 is directly coupled to the dynamometer 33, the measured value of the dynamometer 33 is rapidly increased. It is generally difficult to follow this impulsive load change to perform high-accuracy load control.
相對於此，在本實施形態的研磨裝置100中，由於在研磨體支承構件31與測力計33之間安裝有加壓彈簧32a，因此該加壓彈簧32a可作為阻尼器 (damper)發揮作用。藉此，不會有「測力計33所偵測的荷重急遽地上升」的情形。 On the other hand, in the polishing apparatus 100 of the present embodiment, since the pressure spring 32a is attached between the polishing body support member 31 and the load cell 33, the pressure spring 32a can function as a damper. (damper) works. Therefore, there is no case where the load detected by the dynamometer 33 rises sharply.
在伴隨著晶圓W的研磨加工，該晶圓W的厚度減少，且施加於研磨體10的荷重減少的場合中，頭部30藉由設在塔柱21的驅動機構24，與臂22一起朝下方移動。藉由該移動，研磨體10更用力地抵接於晶圓W，因此施加於研磨體10的荷重增大，且加壓彈簧32a受到壓縮。接著，倘若由測力計33偵測出「研磨裝置100內所預先登錄之施加於研磨體10的最佳荷重」已經恢復，便停止移動。 In the case where the thickness of the wafer W is reduced along with the polishing process of the wafer W, and the load applied to the polishing body 10 is reduced, the head portion 30 is provided together with the arm 22 by the driving mechanism 24 provided on the column 21 Move down. By this movement, the polishing body 10 is more strongly abutted against the wafer W, so that the load applied to the polishing body 10 is increased, and the pressure spring 32a is compressed. Then, if the dynamometer 33 detects that the "optimal load applied to the polishing body 10 registered in the polishing apparatus 100" has been restored, the movement is stopped.
第7圖中，顯示在本實施形態的研磨裝置100中，施加於研磨體10之荷重的圖表。如第7圖所示，在本實施形態的研磨裝置100中，相較於第6圖所示的場合並沒有「荷重突然上升」之處，可確認得知能確實地避免過衝。 Fig. 7 is a graph showing the load applied to the polishing body 10 in the polishing apparatus 100 of the present embodiment. As shown in Fig. 7, in the polishing apparatus 100 of the present embodiment, it is confirmed that the overshoot is reliably avoided as compared with the case where the load is suddenly increased in the case shown in Fig. 6.
然後，一旦達成所期望的研磨加工，便停止研磨液的供給，同時藉由驅動機構24，使頭部30與臂22一起朝上方移動。然後，依據使用者的指示，停止研磨體10及工作台60的旋轉，將晶圓W從工作台60卸下。此時，可視需要，使塔柱21在基座23上朝第1圖之X座標的負值方向移動，使頭部30形成退避。 Then, once the desired polishing process is achieved, the supply of the polishing liquid is stopped, and the head mechanism 30 is moved upward together with the arm 22 by the drive mechanism 24. Then, according to the user's instruction, the rotation of the polishing body 10 and the table 60 is stopped, and the wafer W is detached from the table 60. At this time, if necessary, the column 21 is moved on the susceptor 23 in the negative direction of the X coordinate of FIG. 1 to form the head 30 to be retracted.
根據以上所述的本實施形態，可提供一種：即使研磨墊12通過「晶圓W的表面存在有微小的突起和異物的場所」，藉由彈性機構32的存在，測力計33可實 質上僅量測恆定時之穩定荷重的研磨裝置100。換言之，相對於驅動機構24對頭部30位置之偵測的分解能力(resolving power)，能大幅地提升荷重之偵測的分解能力。 According to the present embodiment described above, it is possible to provide that the dynamometer 33 can be realized by the presence of the elastic mechanism 32 even when the polishing pad 12 passes through a "place where minute projections and foreign matter are present on the surface of the wafer W". Only the polishing apparatus 100 that measures the stable load at a constant level is qualitatively measured. In other words, the resolution power of the detection of the position of the head 30 relative to the drive mechanism 24 can greatly improve the resolution of the detection of the load.
此外，由於彈性機構32具有螺旋彈簧(加壓彈簧32a及平衡用彈簧32b、32c)，因此能以低成本實現該彈性機構32。 Further, since the elastic mechanism 32 has the coil springs (the pressure springs 32a and the balance springs 32b and 32c), the elastic mechanism 32 can be realized at low cost.
不僅如此，根據本發明，可提供一種：可避免當從位置控制切換成荷重控制時所產生之「對研磨時之目標荷重的荷重過衝」的研磨裝置100。 Moreover, according to the present invention, it is possible to provide a polishing apparatus 100 capable of avoiding "load overshoot of a target load at the time of polishing" which is generated when switching from position control to load control.
雖然在本實施形態中，研磨體10透過心軸11而可旋轉地由研磨體支承構件31所支承，但該研磨體10不一定需要被支承成可旋轉。 In the present embodiment, the polishing body 10 is rotatably supported by the polishing body supporting member 31 through the mandrel 11, but the polishing body 10 does not necessarily need to be supported to be rotatable.
W‧‧‧被研磨材(晶圓) W‧‧‧Watted material (wafer)
10‧‧‧研磨體 10‧‧‧ grinding body
11‧‧‧心軸 11‧‧‧ mandrel
12‧‧‧研磨墊 12‧‧‧ polishing pad
20‧‧‧裝置本體 20‧‧‧ device body
21‧‧‧塔柱 21‧‧ ‧ tower
21a‧‧‧一側面 21a‧‧‧ side
22‧‧‧臂 22‧‧‧ Arm
23‧‧‧基座 23‧‧‧ Pedestal
23a‧‧‧上表面 23a‧‧‧Upper surface
24‧‧‧驅動機構 24‧‧‧ drive mechanism
30‧‧‧頭部 30‧‧‧ head
50‧‧‧控制部 50‧‧‧Control Department
60‧‧‧工作台 60‧‧‧Workbench
60a‧‧‧載置面 60a‧‧‧Loading surface
61‧‧‧支承塊 61‧‧‧Support block
62‧‧‧突條 62‧‧‧ 突条
70‧‧‧底座 70‧‧‧Base
71‧‧‧平行溝 71‧‧‧ parallel ditch
100‧‧‧研磨裝置 100‧‧‧ grinding device
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| JP2016021312 | 2016-02-05 | ||
| JP2016254114A JP6921527B2 (en) | 2016-02-05 | 2016-12-27 | Polishing equipment |
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| TWI765726B (en) * | 2021-05-28 | 2022-05-21 | 大量科技股份有限公司 | Polishing system and dressing device thereof |
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| CN115476253B (en) * | 2022-08-12 | 2024-05-24 | 鸿富锦精密电子（成都）有限公司 | Polishing device |
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| CN1345264A (en) * | 1999-03-30 | 2002-04-17 | 株式会社尼康 | Polishing body, polisher, plishing method and method for producing semiconductor device |
| KR100356440B1 (en) * | 1999-12-07 | 2002-10-19 | 사단법인 고등기술연구원 연구조합 | Grinder |
| JP2003229388A (en) * | 2002-02-01 | 2003-08-15 | Nikon Corp | Polishing equipment, polishing method, semiconductor device and its manufacturing method |
| JP2004327774A (en) * | 2003-04-25 | 2004-11-18 | Nikon Corp | Polishing apparatus, semiconductor device manufacturing method employing the same, and semiconductor device manufactured using the method |
| JP5113422B2 (en) * | 2007-05-23 | 2013-01-09 | 富士精工株式会社 | Roller burnishing device with pressure detection device |
| JP5434094B2 (en) * | 2009-01-27 | 2014-03-05 | 株式会社ニコン | Polishing equipment |
| JP5306065B2 (en) * | 2009-06-04 | 2013-10-02 | 株式会社荏原製作所 | Dressing apparatus and dressing method |
| JP2013233651A (en) * | 2013-08-19 | 2013-11-21 | Nikon Corp | Pressing force detection device for grinder |
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| TWI765726B (en) * | 2021-05-28 | 2022-05-21 | 大量科技股份有限公司 | Polishing system and dressing device thereof |
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| KR20170093733A (en) | 2017-08-16 |
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