TW201739619A - Release film for manufacturing process with excellent performance and appearance, the applications thereof and the method of manufacturing resin-sealed semiconductor using the same can be easily released without the effect of metal mold structure or release dosage - Google Patents

Release film for manufacturing process with excellent performance and appearance, the applications thereof and the method of manufacturing resin-sealed semiconductor using the same can be easily released without the effect of metal mold structure or release dosage Download PDF

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TW201739619A
TW201739619A TW105139941A TW105139941A TW201739619A TW 201739619 A TW201739619 A TW 201739619A TW 105139941 A TW105139941 A TW 105139941A TW 105139941 A TW105139941 A TW 105139941A TW 201739619 A TW201739619 A TW 201739619A
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release
film
layer
release film
resin
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TWI823831B (en
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清水勝
志摩健二
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三井化學東賽璐股份有限公司
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Abstract

The invention provides a release film for a manufacturing process, which can be used for forming a finished product after resin packaging, and can be easily released without the effect of metal mold structure or release dosage, for a finished product without any apparent wrinkles or defects. The release film comprises a release layer 1A, a heat-resistant resin layer 1B, and a laminated thin film of the release layer 1A'. The contact angle of the release layer 1A (and the laminated thin film of the release layer 1A') relative to water ranges from 90 degrees to 130 degrees. The tensile elastic rate of the laminated thin film at 120DEG C is from 75MPa to 500MPa, or, from 75MPa to 500MPa at 170DEG C. The release film for a manufacturing process comprises the release film for a manufacturing process, or a release layer 2A, a heat-resistant resin layer 2B, and a laminated thin film of the release layer 2A'. The contact angle of the release layer 2A (and the laminated thin film of the release layer 2A') relative to water ranges from 90 degrees to 130 degrees. The heat-resistant resin layer 2B comprises a layer 2B1 containing high-molecular anti-static agent. The tensile elastic rate of the laminated thin film at 120DEG C ranges from 75MPa to 500MPa, or from 75MPa to 500MPa at 170DEG C.

Description

外觀性能佳的製程用離型薄膜,其用途,及使用其的樹脂封裝半導體的製造方法 Release film for process with good appearance performance, use thereof, and manufacturing method of resin-packaged semiconductor using the same

本發明係有關於能有效地抑制成形品的外觀不良,特別是因皺折造成的外觀不良的製程用離型薄膜,較佳為半導體封裝製程用離型薄膜,特別是在金屬模內配置半導體晶片等將樹脂注入成形時,配置於半導體晶片等與金屬模內面之間的製程用離型薄膜、及使用其的樹脂封裝半導體的製造方法。 The present invention relates to a release film for a process which can effectively suppress the appearance defects of a molded article, in particular, a poor appearance due to wrinkles, and is preferably a release film for a semiconductor package process, in particular, a semiconductor is disposed in a metal mold. When a resin is injection-molded, such as a wafer, a release film for a process such as a semiconductor wafer and the inner surface of a metal mold, and a method of producing a resin-encapsulated semiconductor using the same.

近年來,隨著半導體封裝體等的小型輕量化,考量到要減少封裝樹脂的使用量。因此,即便減少封裝樹脂的使用量,也為了能夠強固黏接半導體晶片等與樹脂之間的界面,期望能夠減少包含於封裝樹脂的離型劑的量。因此,作為得到硬化成形後的封裝樹脂與金屬模之間的離型性的方法,採用有在金屬模內面與半導體晶片等之 間配置離型薄膜的方法。 In recent years, with the miniaturization and weight reduction of semiconductor packages and the like, it has been considered to reduce the amount of use of the encapsulating resin. Therefore, even if the amount of use of the encapsulating resin is reduced, in order to strongly bond the interface between the semiconductor wafer and the like and the resin, it is desirable to reduce the amount of the release agent contained in the encapsulating resin. Therefore, as a method of obtaining the release property between the encapsulating resin and the metal mold after the hardening molding, the inner surface of the metal mold and the semiconductor wafer are used. A method of disposing a release film between.

作為這樣的離型薄膜,提案有離型性及耐熱性優的氟系樹脂薄膜(例如,專利文獻1~2)、聚4-甲基-1-戊烯樹脂薄膜(例如、專利文獻3)等。但是,該等離型薄膜在裝設於金屬模內面時容易產生皺折,該皺折會被轉印至成形品的表面,因而會產生外觀不良的問題。 As such a release film, a fluorine-based resin film having excellent release property and heat resistance (for example, Patent Documents 1 and 2) and a poly-4-methyl-1-pentene resin film (for example, Patent Document 3) are proposed. Wait. However, when the spacer film is mounted on the inner surface of the metal mold, wrinkles are likely to occur, and the wrinkles are transferred to the surface of the molded article, which causes a problem of poor appearance.

因此,提案了具有離型層、耐熱層的層積離型薄膜。該等離型薄膜是在藉由離型層得到離型性的同時,並藉由耐熱層抑制皺折或外觀不良的薄膜。該等提案最具代表性的是注目於離型層、與耐熱層之間的儲藏彈性率的關係者(例如,參照專利文獻4及5。)。例如,在專利文獻4,以離型層的儲藏彈性率較低,而耐熱層的儲藏彈性率較高的構成的層積離型薄膜,更具體來說,記載有離型層的在175℃的儲藏彈性率E’為45MPa以上105MPa以下,耐熱層的在175℃的儲藏彈性率E’為100MPa以上250MPa以下的半導體封裝製程用離型薄膜。 Therefore, a laminated release film having a release layer and a heat-resistant layer has been proposed. The release film is a film which is released from the release layer and which suppresses wrinkles or poor appearance by the heat-resistant layer. The most representative of these proposals is the relationship between the storage modulus and the storage elastic modulus between the release layer and the heat-resistant layer (see, for example, Patent Documents 4 and 5). For example, in Patent Document 4, a laminated release film having a low storage elastic modulus of a release layer and a high storage elastic modulus of a heat-resistant layer, more specifically, a release layer of 175 ° C is described. The storage elastic modulus E' is 45 MPa or more and 105 MPa or less, and the storage elastic modulus E' of the heat-resistant layer at 175 ° C is a release film for a semiconductor packaging process of 100 MPa or more and 250 MPa or less.

此外,這種製程用離型薄膜不只是在半導體封裝製程,也可以用於發光二極體等的發光元件用的反射器的成形製程等中(例如,參照專利文獻6。)。 Further, such a release film for a process can be used not only in a semiconductor package process but also in a molding process of a reflector for a light-emitting element such as a light-emitting diode (see, for example, Patent Document 6).

此外,離型薄膜的帶電也成為成形品外觀不良的原因。在半導體密封工程所用的離型薄膜因為是上述那樣的樹脂薄膜,一般會容易帶電。例如將離型薄膜捲出使用時,在離型薄膜的剝離時產生靜電,製造環境下所存 在的粉塵等異物會附著於帶電的離型薄膜,成為成形品的形狀異常(異物附著等)或金屬模汙染的原因。尤其是,在半導體晶片的封裝裝置中,作為封裝用樹脂有採用顆粒樹脂者,在離型薄膜附著有從顆粒樹脂產生的粉塵所造成的形狀異常或金屬模汙染,以及因其帶來的外觀不良,已經到了不可無視的地步。 Further, charging of the release film also causes a defective appearance of the molded article. The release film used in the semiconductor sealing process is generally easy to be charged because it is a resin film as described above. For example, when the release film is taken out, static electricity is generated during peeling of the release film, and it is stored in a manufacturing environment. Foreign matter such as dust adheres to the charged release film, which causes the shape of the molded article to be abnormal (such as adhesion of foreign matter) or contamination of the metal mold. In particular, in a packaging device for a semiconductor wafer, as a resin for encapsulation, a particle resin is used, and a shape abnormality or a metal mold contamination caused by dust generated from the particulate resin adheres to the release film, and the appearance thereof Bad, has reached the point where it cannot be ignored.

此外,因為近年要求封裝體的薄型化、或放熱性的提升,將半導體晶片倒裝晶片接合,使晶片的背面露出的封裝體漸漸地增加。該工程稱為成型底膜(Molded Under Film;MUF)工程。在MUF工程中,為了保護及遮蔽半導體晶片,離型薄膜及半導體晶片以直接接觸的狀態進行封裝。此時,離型薄膜容易帶電,因為剝離時的帶電-放帶,而會破壞半導體晶片。 Further, in recent years, in order to reduce the thickness of the package or to improve the heat dissipation property, the semiconductor wafer is flip-chip bonded, and the package in which the back surface of the wafer is exposed gradually increases. This project is called Molded Under Film (MUF) engineering. In the MUF project, in order to protect and shield the semiconductor wafer, the release film and the semiconductor wafer are packaged in direct contact. At this time, the release film is easily charged, and the semiconductor wafer is destroyed by charging-releasing at the time of peeling.

因此,提案有各種防止封裝薄膜的帶電的技術。例如,專利文獻7記載有一種離型薄膜,具備:在形成時與硬化性樹脂相接的第1熱塑性樹脂層、與金屬模相接的第2熱塑性樹脂層、在第1熱塑性樹脂層與第2熱塑性樹脂層之間配置的中間層,其中,該中間層為含有高分子系抗靜電劑的層。 Therefore, various proposals have been made to prevent charging of the package film. For example, Patent Document 7 discloses a release film including a first thermoplastic resin layer that is in contact with a curable resin at the time of formation, a second thermoplastic resin layer that is in contact with the mold, and a first thermoplastic resin layer and a first thermoplastic resin layer. An intermediate layer disposed between the thermoplastic resin layers, wherein the intermediate layer is a layer containing a polymer-based antistatic agent.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]JP 2001-310336 A [Patent Document 1] JP 2001-310336 A

[專利文獻2]JP 2002-110722 A [Patent Document 2] JP 2002-110722 A

[專利文獻3]JP 2002-361643 A [Patent Document 3] JP 2002-361643 A

[專利文獻4]JP 2010-208104 A [Patent Document 4] JP 2010-208104 A

[專利文獻5]國際公開WO 2015/133630 A1 [Patent Document 5] International Publication WO 2015/133630 A1

[專利文獻6]JP 2014-14928 A [Patent Document 6] JP 2014-14928 A

[專利文獻7]國際公開WO 2015/133630 A1 [Patent Document 7] International Publication WO 2015/133630 A1

不過,隨著該技術領域的發展,對半導體封裝製程用離型薄膜等的製程用離型薄膜所要求的水準也年年提高,要求在更差的製程條件中也能夠抑制皺折的產生的製程用離型薄膜,特別是強烈要求離型性、皺折的抑制、及金屬模追隨性以更高等級來平衡的製程用離型薄膜。 However, with the development of the technical field, the level required for the release film for a process such as a release film for a semiconductor packaging process is also increasing year by year, and it is required to suppress wrinkles in a worse process condition. The release film for the process, in particular, a release film for a process which is strongly required to have a release property, a wrinkle suppression, and a metal mold follow-up balance at a higher level.

再來,要求在更差的製程條件中也能抑制成形品的外觀不良的製程用離型薄膜,特別是強烈要求離型性、外觀不良的抑制、及金屬模追隨性以極高等級來平衡的製程用離型薄膜。 In addition, it is required to release a release film for a process which is inferior in appearance of a molded article in a worse process condition, and in particular, strongly suppresses release property, suppresses appearance defects, and balances of metal molds at a very high level. The process uses a release film.

本案的第1發明,係鑑於此等情事,其目的為提供一種製程用離型薄膜,係能將樹脂封裝後的成形品,不會因金屬模構造或離型劑量的影響而能夠容易離型,且能夠得到沒有皺折或缺陷等的外觀不良的成形品。 In view of the above, the first object of the present invention is to provide a release film for a process, which is a molded article which can be encapsulated by a resin, and which can be easily released from the influence of a metal mold structure or a release amount. Further, it is possible to obtain a molded article having no appearance defects such as wrinkles or defects.

本案的第2發明,係鑑於此等情事,其目的為提供一種製程用離型薄膜,係能將樹脂封裝後的成形品,不會因 金屬模構造或離型劑量的影響而能夠容易離型,且能夠得到沒有皺折或缺陷、形狀異常(異物附著等)等的外觀不良的成形品。 In view of the above, the second invention of the present invention is to provide a release film for a process, which is a molded article capable of encapsulating a resin, and does not cause The metal mold structure or the influence of the release amount can be easily released, and a molded article having no appearance defects such as wrinkles or defects, abnormal shapes (such as foreign matter adhesion) can be obtained.

本發明者們在為了解決上述課題而進行銳意檢討的結果,發現將製程用離型薄膜在特定溫度的熱尺寸變化率,尤其是將構成製程用離型薄膜的層積薄膜的TD方向(薄膜的面內,相對於薄膜製造時的長邊方向的直線方向。以下,也稱「橫方向」。)的熱尺寸變化率作適切地控制,對於裝設於金屬模內面時的皺折抑制是相當重要的,因而完成本案的第1發明。 As a result of intensive review to solve the above problems, the present inventors have found that the rate of change in the thermal dimensionality of the release film for a process at a specific temperature, in particular, the TD direction of the laminated film constituting the release film for process (film) In the plane of the film, the thermal dimension change rate is hereinafter appropriately controlled with respect to the linear direction in the longitudinal direction of the film production, which is also referred to as "horizontal direction", and the wrinkles are suppressed when mounted on the inner surface of the metal mold. It is quite important to complete the first invention of the present invention.

而且本發明者們在為了解決上述課題而進行銳意檢討的結果,發現將製程用離型薄膜在特定溫度的拉伸彈性率作適切地控制,且在構成該層積薄膜的耐熱樹脂層,設置含有高分子系帶電劑的層,對於外觀不良的抑制是相當重要的,因而完成本案的第2發明。 As a result of the intensive review of the above-mentioned problems, the present inventors have found that the tensile modulus of the release film for a process at a specific temperature is appropriately controlled, and the heat-resistant resin layer constituting the laminated film is provided. The layer containing the polymer-based charged agent is very important for suppressing the appearance defect, and thus the second invention of the present invention has been completed.

也就是本案的第1發明及其各態樣相當於下述[1]到[21]的記載。 That is, the first invention of the present invention and its aspects correspond to the descriptions of [1] to [21] below.

[1] [1]

一種製程用離型薄膜,係包含離型層1A、耐熱樹脂層1B的層積薄膜,其中,前述離型層1A相對於水的接觸角為90°到130°; 前述層積薄膜的在120℃的拉伸彈性率為75MPa到500MPa。 A release film for a process, comprising a release film of a release layer 1A and a heat resistant resin layer 1B, wherein the contact angle of the release layer 1A with respect to water is 90° to 130°; The tensile modulus of the laminated film at 120 ° C is from 75 MPa to 500 MPa.

[2] [2]

如[1]所記載的製程用離型薄膜,其中,前述層積薄膜的橫(TD)方向的從23℃到120℃為止的熱尺寸變化率在3%以下。 The release film for a process according to the above aspect, wherein the thermal film dimensional change ratio of the laminated film in the transverse (TD) direction from 23 ° C to 120 ° C is 3% or less.

[3] [3]

如[1]或[2]所記載的製程用離型薄膜,其中,前述層積薄膜的橫(TD)方向的從23℃到120℃為止的熱尺寸變化率,與縱(MD)方向的從23℃到120℃為止的熱尺寸變化率的和在6%以下。 The release film for a process according to the above aspect, wherein the laminate film has a thermal dimensional change ratio from 23 ° C to 120 ° C in the transverse (TD) direction and a longitudinal (MD) direction. The sum of the thermal dimensional change rates from 23 ° C to 120 ° C is 6% or less.

[4] [4]

一種製程用離型薄膜,係包含離型層1A、耐熱樹脂層1B的層積薄膜,其中,前述離型層1A相對於水的接觸角為90°到130°;前述層積薄膜的在170℃的拉伸彈性率為75MPa到500MPa。 A release film for a process comprising a release film of a release layer 1A and a heat resistant resin layer 1B, wherein a contact angle of the release layer 1A with respect to water is 90° to 130°; The tensile modulus at °C is from 75 MPa to 500 MPa.

[5] [5]

如[4]所記載的製程用離型薄膜,其中,前述層積薄膜的橫(TD)方向的從23℃到170℃為止的熱尺寸變化率在4%以下。 The release film for a process according to the above [4], wherein the thermal film dimensional change ratio of the laminated film in the transverse (TD) direction from 23 ° C to 170 ° C is 4% or less.

[6] [6]

如[4]或[5]所記載的製程用離型薄膜,其中,前述層積薄膜的橫(TD)方向的從23℃到170℃為止的熱尺寸 變化率,與縱(MD)方向的從23℃到170℃為止的熱尺寸變化率的和在7%以下。 The release film for a process according to the above [4], wherein the laminated film has a thermal dimension from 23 ° C to 170 ° C in the transverse (TD) direction. The rate of change and the thermal dimensional change rate from 23 ° C to 170 ° C in the longitudinal (MD) direction are 7% or less.

[7] [7]

如請[1]~[6]中任1項所記載的製程用離型薄膜,其中,前述耐熱樹脂層1B的橫(TD)方向的從23℃到120℃為止的熱尺寸變化率在3%以下。 The release film for a process according to any one of the above aspects, wherein the heat-resistant resin layer 1B has a thermal dimensional change rate from 23 ° C to 120 ° C in the transverse (TD) direction of 3 %the following.

[8] [8]

如[7]所記載的製程用離型薄膜,其中,前述耐熱樹脂層1B的橫(TD)方向的從23℃到120℃為止的熱尺寸變化率,與縱(MD)方向的從23℃到120℃為止的熱尺寸變化率的和在6%以下。 The release film for a process according to the above [7], wherein the heat-resistant resin layer 1B has a thermal dimensional change ratio from 23 ° C to 120 ° C in the transverse (TD) direction and 23 ° C in the vertical (MD) direction. The sum of the thermal dimensional change rates up to 120 ° C is 6% or less.

[9] [9]

如[1]~[6]中任1項所記載的製程用離型薄膜,其中,前述耐熱樹脂層1B的橫(TD)方向的從23℃到170℃為止的熱尺寸變化率在3%以下。 The release film for a process according to any one of the above aspects, wherein the heat-resistant resin layer 1B has a thermal dimensional change rate from 3% to 170° C in the transverse (TD) direction of 3%. the following.

[10] [10]

如[9]所記載的製程用離型薄膜,其中,前述耐熱樹脂層1B的橫(TD)方向的從23℃到170℃為止的熱尺寸變化率,與縱(MD)方向的從23℃到170℃為止的熱尺寸變化率的和在5%以下。 The release film for a process according to the above [9], wherein the heat-resistant resin layer 1B has a thermal dimensional change ratio from 23 ° C to 170 ° C in the transverse (TD) direction and 23 ° C in the vertical (MD) direction. The sum of the thermal dimensional change rates up to 170 ° C is 5% or less.

[11] [11]

如[1]~[10]中任1項所記載的製程用離型薄膜,其中,前述離型層1A包含從:氟樹脂、4-甲基-1-戊烯(共)聚合物、及聚苯乙烯系樹脂所構成的群中選出的樹 脂。 The release film for a process according to any one of the above aspects, wherein the release layer 1A comprises: a fluororesin, a 4-methyl-1-pentene (co)polymer, and Tree selected from the group consisting of polystyrene resins fat.

[12] [12]

如[1]~[11]中任1項所記載的製程用離型薄膜,其中,前述耐熱樹脂層1B包含延伸薄膜。 The process release film according to any one of the above aspects, wherein the heat resistant resin layer 1B comprises a stretched film.

[13] [13]

如[12]所記載的製程用離型薄膜,其中,前述延伸薄膜係從:延伸聚酯纖維薄膜、延伸聚醯胺薄膜、及延伸聚丙烯薄膜所構成的群中選出。 The release film for a process according to [12], wherein the stretched film is selected from the group consisting of an extended polyester fiber film, a stretched polyamide film, and an extended polypropylene film.

[14] [14]

如[1]~[13]中任1項所記載的製程用離型薄膜,其中,前述耐熱樹脂層1B的以JISK7221為準並藉由示差掃描熱量測定(DSC)所測定的第1次昇溫工程中的結晶熔解熱量為20J/g以上且100J/g以下。 The release film for a process according to any one of the above aspects, wherein the heat-resistant resin layer 1B is heated by the differential scanning calorimetry (DSC) based on JIS K7221. The heat of crystal melting in the project is 20 J/g or more and 100 J/g or less.

[15] [15]

如[1]~[14]中任1項所記載的製程用離型薄膜,其中,前述層積薄膜更具有離型層1A’,而且,以該離型層1A、前述耐熱樹脂層1B、前述離型層1A’的順序含有;該離型層1A’相對於水的接觸角為90°到130°。 The release film for a process according to any one of the above aspects, wherein the laminated film further has a release layer 1A', and the release layer 1A, the heat resistant resin layer 1B, The order of the release layer 1A' is contained; the contact angle of the release layer 1A' with respect to water is 90 to 130.

[16] [16]

如[15]所記載的製程用離型薄膜,其中,前述離型層1A及前述離型層1A’的至少一者,包含從:氟樹脂、4-甲基-1-戊烯(共)聚合物、及聚苯乙烯系樹脂所構成的群中選出的樹脂。 The release film for a process according to [15], wherein at least one of the release layer 1A and the release layer 1A' comprises: a fluororesin, a 4-methyl-1-pentene (total) A resin selected from the group consisting of a polymer and a polystyrene resin.

[17] [17]

如[1]~[16]中任1項所記載的製程用離型薄膜,係用於熱固性樹脂所致的封裝製程。 The release film for a process according to any one of [1] to [16] is used for a packaging process by a thermosetting resin.

[18] [18]

如[1]~[17]中任1項所記載的製程用離型薄膜,係用於半導體封裝製程。 The release film for a process according to any one of [1] to [17] is used for a semiconductor packaging process.

[19] [19]

如[1]~[17]中任1項所記載的製程用離型薄膜,係用於纖維強化塑膠成形製程、或塑膠透鏡成形製程。 The release film for process according to any one of [1] to [17] is used for a fiber reinforced plastic molding process or a plastic lens forming process.

[20] [20]

一種樹脂封裝半導體的製造方法,具有:在成形金屬模內的預定位置,配置經樹脂封裝的半導體裝置的工程;在前述成形金屬模內面,將如[1]~[16]中任1項所記載的半導體封裝製程用離型薄膜,以使前述離型層1A與前述半導體裝置對向的方式配置的工程;將前述成形金屬模合模後,在前述半導體裝置與前述半導體封裝製程用離型薄膜之間,將封裝樹脂注入成形的工程。 A method of manufacturing a resin-encapsulated semiconductor, comprising: arranging a resin-encapsulated semiconductor device at a predetermined position in a molding die; and forming an inner surface of the molding die as in any one of [1] to [16] The release film for a semiconductor package process is disposed such that the release layer 1A faces the semiconductor device; after the mold is molded, the semiconductor device and the semiconductor package process are separated Between the types of films, the encapsulation resin is injected into the forming process.

[21] [twenty one]

一種樹脂封裝半導體的製造方法,具有:在成形金屬模內的預定位置,配置經樹脂封裝的半導體裝置的工程;在前述成形金屬模內面,將如[15]或[16]所記載的半導體封裝製程用離型薄膜,以使前述離型層1A’與前述半 導體裝置對向的方式配置的工程;將前述成形金屬模合模後,在前述半導體裝置與前述半導體封裝製程用離型薄膜之間,將封裝樹脂注入成形的工程。 A method of manufacturing a resin-encapsulated semiconductor, comprising: arranging a resin-encapsulated semiconductor device at a predetermined position in a molding die; and forming a semiconductor according to [15] or [16] on the inner surface of the molding die a release film for packaging process to make the release layer 1A' and the aforementioned half A process in which the conductor device is disposed to face each other; and after the mold is molded, the package resin is injected into the molding process between the semiconductor device and the release film for the semiconductor package process.

此外,在本案中,所謂的「半導體裝置」也包含半導體元件(晶片)的概念。 Further, in the present case, the term "semiconductor device" also includes the concept of a semiconductor element (wafer).

此外,本案的第2發明及其各態樣相當於下述[22]到[46]的記載。 Further, the second invention of the present invention and its aspects correspond to the descriptions of [22] to [46] below.

[22] [twenty two]

一種製程用離型薄膜,係包含離型層2A、耐熱樹脂層2B的層積薄膜,其中,前述離型層2A相對於水的接觸角為90°到130°;前述耐熱樹脂層2B包含含有高分子系抗靜電劑的層2B1;前述層積薄膜的在120℃的拉伸彈性率為75MPa到500MPa。 A release film for a process comprising a release film 2A and a heat resistant resin layer 2B, wherein the release layer 2A has a contact angle with respect to water of 90° to 130°; and the heat resistant resin layer 2B contains The layer 2B1 of the polymer antistatic agent; the tensile modulus of the laminated film at 120 ° C is 75 MPa to 500 MPa.

[23] [twenty three]

如[22]所記載的製程用離型薄膜,其中,前述層積薄膜的橫(TD)方向的從23℃到120℃為止的熱尺寸變化率在3%以下。 The release film for a process according to the above aspect, wherein the thermal film dimensional change ratio of the laminated film in the transverse (TD) direction from 23 ° C to 120 ° C is 3% or less.

[24] [twenty four]

如[22]或[23]所記載的製程用離型薄膜,其中,前述層積薄膜的橫(TD)方向的從23℃到120℃為止的熱尺寸變化率,與縱(MD)方向的從23℃到120℃為止的熱 尺寸變化率的和在6%以下。 The release film for a process according to the above [22], wherein the laminate film has a thermal dimensional change ratio from 23 ° C to 120 ° C in the transverse (TD) direction and a longitudinal (MD) direction. Heat from 23 ° C to 120 ° C The sum of dimensional change rates is below 6%.

[25] [25]

一種製程用離型薄膜,係包含離型層2A、耐熱樹脂層2B的層積薄膜,其中,前述離型層2A相對於水的接觸角為90°到130°;前述耐熱樹脂層2B包含含有高分子系抗靜電劑的層2B1;前述層積薄膜的在170℃的拉伸彈性率為75MPa到500MPa。 A release film for a process comprising a release film 2A and a heat resistant resin layer 2B, wherein the release layer 2A has a contact angle with respect to water of 90° to 130°; and the heat resistant resin layer 2B contains The layer 2B1 of the polymer antistatic agent; and the tensile modulus of the laminated film at 170 ° C is 75 MPa to 500 MPa.

[26] [26]

如[25]所記載的製程用離型薄膜,其中,前述層積薄膜的橫(TD)方向的從23℃到170℃為止的熱尺寸變化率在4%以下。 The release film for a process according to the above aspect, wherein the laminate film has a thermal dimensional change ratio of from 4 ° C to 170 ° C in the transverse (TD) direction of 4% or less.

[27] [27]

如[25]或[26]所記載的製程用離型薄膜,其中,前述層積薄膜的橫(TD)方向的從23℃到170℃為止的熱尺寸變化率,與縱(MD)方向的從23℃到170℃為止的熱尺寸變化率的和在7%以下。 The process release film according to the above [25], wherein the laminate film has a thermal dimensional change ratio from 23 ° C to 170 ° C in the transverse (TD) direction and a longitudinal (MD) direction. The sum of the thermal dimensional change rates from 23 ° C to 170 ° C is 7% or less.

[28] [28]

如[22]~[27]中任1項所記載的製程用離型薄膜,其中,前述耐熱樹脂層2B包含:含有高分子系抗靜電劑的層2B1、以及含有黏接劑的黏接層2B2。 The process release film according to any one of the aspects of the invention, wherein the heat resistant resin layer 2B comprises a layer 2B1 containing a polymer antistatic agent and an adhesive layer containing an adhesive. 2B2.

[29] [29]

如[22]~[27]中任1項所記載的製程用離型薄膜,其 中,前述耐熱樹脂層2B包含:高分子系抗靜電劑、以及含有黏接劑的黏接層2B3。 The release film for a process according to any one of [22] to [27], wherein The heat resistant resin layer 2B includes a polymer antistatic agent and an adhesive layer 2B3 containing a binder.

[30] [30]

如[20]~[29]中任1項所記載的製程用離型薄膜,其中,前述耐熱樹脂層2B的橫(TD)方向的從23℃到120℃為止的熱尺寸變化率在3%以下。 The release film for a process according to any one of the aspects of the present invention, wherein the heat-resistant resin layer 2B has a thermal dimensional change rate from 3% to 120° C in the transverse (TD) direction of 3%. the following.

[31] [31]

如[30]所記載的製程用離型薄膜,其中,前述耐熱樹脂層2B的橫(TD)方向的從23℃到120℃為止的熱尺寸變化率,與縱(MD)方向的從23℃到120℃為止的熱尺寸變化率的和在6%以下。 The release film for a process according to [30], wherein the heat-resistant resin layer 2B has a thermal dimensional change ratio from 23 ° C to 120 ° C in the transverse (TD) direction and 23 ° C in the vertical (MD) direction. The sum of the thermal dimensional change rates up to 120 ° C is 6% or less.

[32] [32]

如[22]~[29]中任1項所記載的製程用離型薄膜,其中,前述耐熱樹脂層2B的橫(TD)方向的從23℃到170℃為止的熱尺寸變化率在3%以下。 The release film for a process according to any one of the above aspects, wherein the heat-resistant resin layer 2B has a thermal dimensional change rate of from 3% to 170° C in the transverse (TD) direction of 3%. the following.

[33] [33]

如[32]所記載的製程用離型薄膜,其中,前述耐熱樹脂層2B的橫(TD)方向的從23℃到170℃為止的熱尺寸變化率,與縱(MD)方向的從23℃到170℃為止的熱尺寸變化率的和在5%以下。 The release film for a process according to [32], wherein the heat-resistant resin layer 2B has a thermal dimensional change ratio from 23 ° C to 170 ° C in the transverse (TD) direction and 23 ° C in the vertical (MD) direction. The sum of the thermal dimensional change rates up to 170 ° C is 5% or less.

[34] [34]

如[22]~[33]中任1項所記載的製程用離型薄膜,其中,前述離型層2A包含從:氟樹脂、4-甲基-1-戊烯(共)聚合物、及聚苯乙烯系樹脂所構成的群中選出的樹 脂。 The release film for a process according to any one of the above aspects, wherein the release layer 2A comprises: a fluororesin, a 4-methyl-1-pentene (co)polymer, and Tree selected from the group consisting of polystyrene resins fat.

[35] [35]

如[22]~[34]中任1項所記載的製程用離型薄膜,其中,前述耐熱樹脂層2B包含延伸薄膜。 The release film for a process according to any one of the above aspects, wherein the heat resistant resin layer 2B comprises a stretched film.

[36] [36]

如[35]所記載的製程用離型薄膜,其中,前述延伸薄膜係從:延伸聚酯纖維薄膜、延伸聚醯胺薄膜、及延伸聚丙烯薄膜所構成的群中選出。 The release film for a process according to [35], wherein the stretched film is selected from the group consisting of an extended polyester fiber film, a stretched polyamide film, and an extended polypropylene film.

[37] [37]

如[22]~[36]中任1項所記載的製程用離型薄膜,其中,前述耐熱樹脂層2B的以JISK7221為準並藉由示差掃描熱量測定(DSC)所測定的第1次昇溫工程中的結晶熔解熱量為20J/g以上且100J/g以下。 The release film for a process according to any one of the above-mentioned items, wherein the heat-resistant resin layer 2B has a first temperature increase measured by differential scanning calorimetry (DSC) based on JIS K7221 The heat of crystal melting in the project is 20 J/g or more and 100 J/g or less.

[38] [38]

如[22]~[37]中任1項所記載的製程用離型薄膜,其中,前述離型層2A的表面固有電阻值為1×1013Ω/□以下。 The process release film according to any one of the above aspects, wherein the release layer 2A has a surface specific resistance of 1 × 10 13 Ω/□ or less.

[39] [39]

如[22]~[38]中任1項所記載的製程用離型薄膜,其中,前述層積薄膜更具有離型層2A’,而且,以該離型層2A、前述耐熱樹脂層2B、前述離型層2A’的順序含有;該離型層2A’相對於水的接觸角為90°到130°。 The release film for a process according to any one of the above aspects, wherein the laminated film further has a release layer 2A', and the release layer 2A, the heat resistant resin layer 2B, The order of the aforementioned release layer 2A' is contained; the contact angle of the release layer 2A' with respect to water is from 90 to 130.

[40] [40]

如[39]所記載的製程用離型薄膜,其中,前述離型層 2A及前述離型層2A’的至少一者,包含從:氟樹脂、4-甲基-1-戊烯(共)聚合物、及聚苯乙烯系樹脂所構成的群中選出的樹脂。 The release film for a process according to [39], wherein the release layer is At least one of 2A and the release layer 2A' includes a resin selected from the group consisting of a fluororesin, a 4-methyl-1-pentene (co)polymer, and a polystyrene resin.

[41] [41]

如[39]或[40]所記載的製程用離型薄膜,其中,前述離型層2A’的表面固有電阻值為1×1013Ω/□以下。 The release film for a process according to the above [39], wherein the release layer 2A' has a surface specific resistance of 1 × 10 13 Ω/□ or less.

[42] [42]

如[22]~[41]中任1項所記載的製程用離型薄膜,係用於熱固性樹脂所致的封裝製程。 The release film for a process according to any one of [22] to [41] is used for a packaging process by a thermosetting resin.

[43] [43]

如[22]~[42]中任1項所記載的製程用離型薄膜,係用於半導體封裝製程。 The release film for a process according to any one of [22] to [42] is used for a semiconductor packaging process.

[44] [44]

如[22]~[42]中任1項所記載的製程用離型薄膜,係用於纖維強化塑膠成形製程、或塑膠透鏡成形製程。 The release film for the process described in any one of [22] to [42] is used for a fiber reinforced plastic forming process or a plastic lens forming process.

[45] [45]

一種樹脂封裝半導體的製造方法,具有:在成形金屬模內的預定位置,配置經樹脂封裝的半導體裝置的工程;在前述成形金屬模內面,將如[22]~[43]中任1項所記載的半導體封裝製程用離型薄膜,以使前述離型層2A與前述半導體裝置對向的方式配置的工程;將前述成形金屬模合模後,在前述半導體裝置與前述半導體封裝製程用離型薄膜之間,將封裝樹脂注入成形的 工程。 A method of manufacturing a resin-encapsulated semiconductor, comprising: arranging a resin-encapsulated semiconductor device at a predetermined position in a molding die; and forming an inner surface of the molding die as in any one of [22] to [43] The release film for a semiconductor package process, wherein the release layer 2A is disposed to face the semiconductor device; after the mold is molded, the semiconductor device and the semiconductor package process are separated In between the film, the encapsulating resin is injected into the formed engineering.

[46] [46]

一種樹脂封裝半導體的製造方法,具有:在成形金屬模內的預定位置,配置經樹脂封裝的半導體裝置的工程;在前述成形金屬模內面,將如[39]~[41]中任1項所記載的半導體封裝製程用離型薄膜,以使前述離型層2A’與前述半導體裝置對向的方式配置的工程;將前述成形金屬模合模後,在前述半導體裝置與前述半導體封裝製程用離型薄膜之間,將封裝樹脂注入成形的工程。 A method of manufacturing a resin-encapsulated semiconductor, comprising: arranging a resin-encapsulated semiconductor device at a predetermined position in a molding die; and forming an inner surface of the molding die as in any one of [39] to [41] The release film for a semiconductor package process is disposed such that the release layer 2A' faces the semiconductor device; after the mold is molded, the semiconductor device and the semiconductor package process are used. Between the release films, the encapsulation resin is injected into the forming process.

此外,在本案中,所謂的「半導體裝置」也包含半導體元件(晶片)的概念。 Further, in the present case, the term "semiconductor device" also includes the concept of a semiconductor element (wafer).

本案第1發明的製程用離型薄膜,因為兼備先前技術所未能實現的高等級的離型性、皺折的抑制、及金屬模追隨性,使用該製程用離型薄膜,能夠使將半導體晶片等樹脂封裝等所得到的成形品更容易地離型,同時能夠以高生產性地製造沒有皺折或缺陷等外觀不良的成形品。 In the release film for process of the first aspect of the present invention, since the high-grade release property, wrinkle suppression, and metal mold followability which were not achieved by the prior art are used, the release film can be used to form the semiconductor. A molded article obtained by a resin package such as a wafer can be more easily released, and a molded article having no appearance defects such as wrinkles or defects can be produced with high productivity.

本案第2發明的製程用離型薄膜,因為兼備先前技術所未能實現的高等級的離型性、外觀不良的抑制、及金屬模追隨性,使用該製程用離型薄膜,能夠使將半導體晶片 等樹脂封裝等所得到的成形品更容易地離型,同時能夠以高生產性地製造沒有皺折或缺陷、形狀異常(異物附著等)等外觀不良的成形品。本案第2發明的製程用離型薄膜特別較佳為在採用顆粒樹脂作為封裝用樹脂的封裝裝置中使用。 In the release film for process of the second aspect of the present invention, since the high-level release property, the suppression of the appearance defect, and the followability of the mold which are not achieved by the prior art are obtained, the release film can be used to form the semiconductor. Wafer The molded article obtained by the resin encapsulation or the like can be easily released, and a molded article having no appearance defects such as wrinkles or defects, abnormal shapes (such as foreign matter adhesion), can be produced with high productivity. The release film for process of the second invention of the present invention is particularly preferably used in a packaging device using a pellet resin as a resin for encapsulation.

1、1-2、1-3‧‧‧離型薄膜 1, 1-2, 1-3‧‧‧ release film

2‧‧‧上金屬模 2‧‧‧Upper metal mold

3‧‧‧吸引口 3‧‧‧ attracting mouth

4‧‧‧封裝樹脂 4‧‧‧Packaging resin

4-2‧‧‧半導體封裝體 4-2‧‧‧ semiconductor package

5‧‧‧下金屬模 5‧‧‧Under metal mold

6‧‧‧半導體晶片 6‧‧‧Semiconductor wafer

7‧‧‧基板 7‧‧‧Substrate

8‧‧‧成形金屬模 8‧‧‧Forming metal mold

10、20、22‧‧‧離型薄膜 10, 20, 22‧‧‧ release film

12‧‧‧耐熱樹脂層1B、2B 12‧‧‧Heat Resin Layer 1B, 2B

14‧‧‧黏接層 14‧‧‧Adhesive layer

16、16A‧‧‧離型層1A、2A 16, 16A‧‧‧ Release layer 1A, 2A

16B‧‧‧離型層1A’、2A’ 16B‧‧‧ Release layer 1A’, 2A’

24、26‧‧‧輥 24, 26‧‧‧ Roll

28‧‧‧成形金屬模 28‧‧‧Forming metal mold

30‧‧‧上模 30‧‧‧上模

32‧‧‧下模 32‧‧‧Down

34‧‧‧半導體晶片 34‧‧‧Semiconductor wafer

34A‧‧‧基板 34A‧‧‧Substrate

36‧‧‧封裝樹脂 36‧‧‧Encapsulated resin

40、44‧‧‧半導體封裝體 40, 44‧‧‧ semiconductor package

[圖1]表示本發明的製程用離型薄膜的一例之模式圖。 Fig. 1 is a schematic view showing an example of a release film for a process of the present invention.

[圖2]表示本發明的製程用離型薄膜的其他例之模式圖。 Fig. 2 is a schematic view showing another example of the release film for a process of the present invention.

[圖3]表示使用本發明的製程用離型薄膜的樹脂封裝半導體的製造方法的一例之模式圖。 FIG. 3 is a schematic view showing an example of a method of producing a resin-packaged semiconductor using the release film for a process of the present invention.

[圖4A]表示使用本發明的製程用離型薄膜的樹脂封裝半導體的製造方法的一例之模式圖。 FIG. 4A is a schematic view showing an example of a method of producing a resin-packaged semiconductor using the release film for a process of the present invention.

[圖4B]表示使用本發明的製程用離型薄膜的樹脂封裝半導體的製造方法的一例之模式圖。 4B is a schematic view showing an example of a method of producing a resin-encapsulated semiconductor using the release film for a process of the present invention.

[圖5]表示使用圖4A及圖4B的樹脂封裝半導體的製造方法所得到的樹脂封裝半導體的一例之模式圖。 FIG. 5 is a schematic view showing an example of a resin-encapsulated semiconductor obtained by using the method for producing a resin-packaged semiconductor of FIGS. 4A and 4B.

[實施形態] [Embodiment]

製程用離型薄膜 Process release film

本案第1發明的製程用離型薄膜包含以下4態樣。 The release film for process of the first invention of the present invention comprises the following four aspects.

(第1-1態樣) (1-1st aspect)

一種製程用離型薄膜,係包含離型層1A、耐熱樹脂層1B的層積薄膜,其中,前述離型層1A相對於水的接觸角為90°到130°;前述層積薄膜的在120℃的拉伸彈性率為75MPa到500MPa。 A release film for a process comprising a release film of a release layer 1A and a heat resistant resin layer 1B, wherein a contact angle of the release layer 1A with respect to water is 90° to 130°; The tensile modulus at °C is from 75 MPa to 500 MPa.

(第1-2態樣) (Section 1-2)

一種製程用離型薄膜,係包含離型層1A、耐熱樹脂層1B的層積薄膜,其中,前述離型層1A相對於水的接觸角為90°到130°;前述層積薄膜的在170℃的拉伸彈性率為75MPa到500MPa。 A release film for a process comprising a release film of a release layer 1A and a heat resistant resin layer 1B, wherein a contact angle of the release layer 1A with respect to water is 90° to 130°; The tensile modulus at °C is from 75 MPa to 500 MPa.

(第1-3態樣) (Section 1-3)

一種製程用離型薄膜,係包含以離型層1A、耐熱樹脂層1B、離型層1A’的順序層積的層積薄膜,其中,前述離型層1A及前述離型層1A’相對於水的接觸角為90°到130°,前述層積薄膜的在120℃的拉伸彈性率為75MPa到500MPa。 A release film for a process comprising a laminated film laminated in the order of a release layer 1A, a heat resistant resin layer 1B, and a release layer 1A', wherein the release layer 1A and the release layer 1A' are opposed to each other The contact angle of water is from 90 to 130, and the tensile modulus of the laminated film at 120 ° C is from 75 MPa to 500 MPa.

(第1-4態樣) (section 1-4)

一種製程用離型薄膜,係包含以離型層1A、耐熱樹脂層1B、離型層1A’的順序層積的層積薄膜,其中,前述離型層1A及前述離型層1A’相對於水的接觸角 為90°到130°,前述層積薄膜的在170℃的拉伸彈性率為75MPa到500MPa。 A release film for a process comprising a laminated film laminated in the order of a release layer 1A, a heat resistant resin layer 1B, and a release layer 1A', wherein the release layer 1A and the release layer 1A' are opposed to each other Water contact angle The laminated elastic film has a tensile modulus at 75 ° C of 75 MPa to 500 MPa of from 90 ° to 130 °.

從上述各態樣可以明白,本案第1發明的製程用離型薄膜(以下,有單稱為「離型薄膜」的情形)包含:對成形品或金屬模具有離型性的離型層1A、及適其需要的離型層1A’、以及支撐該離型層的耐熱樹脂層1B的層積薄膜。 As is apparent from the above-described aspects, the release film for a process according to the first aspect of the invention (hereinafter referred to as a "release film") includes a release layer 1A having a release property to a molded article or a metal mold. And a laminated film of the release layer 1A' which is suitable for the film and the heat-resistant resin layer 1B which supports the release layer.

本案第1發明的製程用離型薄膜,在成形金屬模的內部將半導體元件等樹脂封裝時,被配置於成形金屬模的內面。此時,將離型薄膜的離型層1A(若存在離型層1A’時是離型層1A’也可以)配置在經樹脂封裝的半導體元件等(成形品)側較佳。配置本案第1發明的離型薄膜,能夠容易將經樹脂封裝的半導體元件等從金屬模離型。 In the release film for process of the first aspect of the invention, when a resin such as a semiconductor element is encapsulated inside the molding die, it is placed on the inner surface of the molding die. In this case, it is preferable to arrange the release layer 1A of the release film (or the release layer 1A' when the release layer 1A' is present) on the resin-molded semiconductor element or the like (molded article). By disposing the release film of the first invention of the present invention, it is possible to easily separate the resin-packaged semiconductor element or the like from the metal mold.

離型層1A的相對於水的接觸角為90°到130°,因為具有這樣的接觸角,離型層1A的浸潤性降低,不會固定附著於硬化的封裝樹脂或金屬模表面,容易將成形品離型。 The contact angle of the release layer 1A with respect to water is 90° to 130°, and since such a contact angle is obtained, the wettability of the release layer 1A is lowered, and it is not fixedly attached to the hardened encapsulating resin or the surface of the metal mold, and it is easy to The molded article is released.

離型層1A相對於水的接觸角較佳為95°到120°,更佳為98°到115°,再更佳為100°到110°。 The contact angle of the release layer 1A with respect to water is preferably from 95 to 120, more preferably from 98 to 115, still more preferably from 100 to 110.

如同前述,因為離型層1A(根據情況為離型層1A’)配置在成形品側,能抑制樹脂密封工程中的離型層1A(根據情況為離型層1A’)的皺折的產生而較佳。在離型層1A(根據情況為離型層1A’)產生的皺折的 話,所產生的皺折會被轉印至成形品,因此增加了發生成形品的外觀不良的可能性。 As described above, since the release layer 1A (the release layer 1A' as the case may be) is disposed on the molded article side, generation of wrinkles of the release layer 1A (the release layer 1A' according to the case) in the resin sealing process can be suppressed. Better. Wrinkles produced in the release layer 1A (as the case of the release layer 1A') In this case, the wrinkles generated are transferred to the molded article, which increases the possibility that the appearance of the molded article is poor.

在本案第1發明中,為達成上述目的,作為構成製程用離型薄膜的層積薄膜,使用包含:離型層1A(及適其需要的離型層1A’)、以及支撐該離型層的耐熱樹脂層1B的層積薄膜,而該拉伸彈性率表現出特定值的層積薄膜。 In the first invention of the present invention, in order to achieve the above object, a release film constituting a release film for a process is used, and a release layer 1A (and a release layer 1A' as needed) is used, and the release layer is supported. The heat-resistant resin layer 1B is laminated with a film, and the tensile modulus exhibits a laminated film of a specific value.

也就是說,包含離型層1A(及適其需要的離型層1A’)、以及支撐該離型層的耐熱樹脂層1B的層積薄膜,其在120℃的拉伸彈性率為75MPa到500MPa,或者,其在170℃的拉伸彈性率為75MPa到500MPa。再來,前述層積薄膜,在120℃的拉伸彈性率為75MPa到500MPa,且在170℃的拉伸彈性率為75MPa到500MPa較佳。 That is, a laminated film including the release layer 1A (and the release layer 1A' as needed) and the heat resistant resin layer 1B supporting the release layer has a tensile modulus at a temperature of 120 ° C of 75 MPa. 500 MPa, or its tensile modulus at 170 ° C is 75 MPa to 500 MPa. Further, the laminated film has a tensile modulus at 75 ° C of 75 MPa to 500 MPa, and a tensile modulus at 170 ° C of preferably 75 MPa to 500 MPa.

因為上述層積薄膜的在120℃的拉伸彈性率為75MPa到500MPa,或者,在170℃的拉伸彈性率為75MPa到500MPa,能夠有效地抑制在樹脂密封工程等中的離型層的皺折產生。構成製程用離型薄膜的層積薄膜的在特定溫度的拉伸彈性率表現出上述的特定的值,雖並不一定能夠明確說明抑制離型層的皺折發生的機制,但推測與在製程時在加熱的狀態下具有一定值以上的拉伸彈性率,在抑制皺折的產生所引起的變形的同時,因為具有一定值以下的拉伸彈性率而能分散形變有所關連。若超過500MPa的話,金屬模追隨性劣化,在端部難以填充封裝樹脂,而產生樹脂缺陷等的外觀不良發生的可能性變高。 Since the tensile modulus of the laminated film at 120 ° C is 75 MPa to 500 MPa, or the tensile modulus at 170 ° C is 75 MPa to 500 MPa, the wrinkle of the release layer in the resin sealing process or the like can be effectively suppressed. The fold is generated. The tensile modulus at a specific temperature of the laminated film constituting the release film for a process exhibits the above specific value, and the mechanism for suppressing the occurrence of wrinkles of the release layer is not necessarily clearly explained, but it is presumed and processed. In the state of being heated, the tensile modulus of elasticity is equal to or greater than a certain value, and the deformation due to the occurrence of wrinkles is suppressed, and the deformation of the dispersion is made to have a tensile modulus of elasticity of a certain value or less. When it exceeds 500 MPa, the followability of the metal mold is deteriorated, and it is difficult to fill the sealing resin at the end portion, and there is a high possibility that appearance defects such as resin defects occur.

構成本案第1發明的製程用離型薄膜的層積薄膜,其在120℃的拉伸彈性率為:80MPa到400MPa較佳,85MPa到350MPa更佳,88MPa到300MPa又更佳,90MPa到280MPa特佳。 The laminated film of the release film for process of the first invention of the present invention has a tensile modulus at 120 ° C of preferably 80 MPa to 400 MPa, more preferably 85 MPa to 350 MPa, more preferably 88 MPa to 300 MPa, and 90 MPa to 280 MPa. good.

構成本案第1發明的製程用離型薄膜的層積薄膜,其在170℃的拉伸彈性率為80MPa到400MPa較佳,85MPa到350MPa更佳,88MPa到300MPa更佳,90MPa到280MPa更佳,95MPa到200MPa又更佳,105MPa到170MPa特佳。 The laminated film of the release film for process of the first invention of the present invention preferably has a tensile modulus at 70 ° C of 80 MPa to 400 MPa, more preferably 85 MPa to 350 MPa, more preferably 88 MPa to 300 MPa, and more preferably 90 MPa to 280 MPa. 95MPa to 200MPa is more preferable, and 105MPa to 170MPa is particularly preferable.

構成本案第1發明的製程用離型薄膜的層積薄膜,其在120℃的拉伸彈性率,及在170℃的拉伸彈性率一同在上述較佳的範圍內,因為其加工時的自由度及用途較廣更特別推薦。 The laminated film of the release film for process of the first invention of the present invention has a tensile modulus at 120 ° C and a tensile modulus at 170 ° C in the above preferred range because of its freedom of processing. It is more widely recommended for its wide range of uses and uses.

此外,包含離型層1A(及適其需要的離型層1A’)、以及支撐該離型層的耐熱樹脂層1B的層積薄膜,其TD方向(橫方向)的從23℃到120℃為止的熱尺寸變化率為3%以下,或者,其TD方向(橫方向)的從23℃到170℃為止的熱尺寸變化率為4%以下較佳。再來,前述層積薄膜,TD方向(橫方向)的從23℃到120℃為止 的熱尺寸變化率為3%以下且TD方向(橫方向)的從23℃到170℃為止的熱尺寸變化率為4%以下更佳。 Further, the laminated film including the release layer 1A (and the release layer 1A' as needed) and the heat resistant resin layer 1B supporting the release layer has a TD direction (lateral direction) of from 23 ° C to 120 ° C. The thermal dimensional change rate is 3% or less, or the thermal dimensional change rate from 23 ° C to 170 ° C in the TD direction (lateral direction) is preferably 4% or less. Further, the laminated film has a TD direction (lateral direction) from 23 ° C to 120 ° C The thermal dimensional change rate is 3% or less, and the thermal dimensional change rate from 23 ° C to 170 ° C in the TD direction (lateral direction) is preferably 4% or less.

因為上述層積薄膜的TD方向(橫方向)的從23℃到120℃為止的熱尺寸變化率為3%以下,或者其TD方向(橫方向)的從23℃到170℃為止的熱尺寸變化率為4%以下,能夠更有效地抑制在樹脂密封工程等中的離型層的皺折產生。在該實施形態中,作為構成製程用離型薄膜的層積薄膜,藉由採用表現出橫(TD)方向的熱尺寸變化率的上述特定值者,雖並不一定能夠明確說明能更有效地抑制離型層的皺折發生的機制,但推測與藉由使用熱膨脹/收縮較小的層積薄膜,製程時的加熱/冷卻所造成的離型層1A(或離型層1A’)的熱膨脹/收縮能夠被抑制有所關連。 The thermal dimensional change rate from 23 ° C to 120 ° C in the TD direction (lateral direction) of the laminated film is 3% or less, or the thermal dimensional change from 23 ° C to 170 ° C in the TD direction (lateral direction). When the rate is 4% or less, wrinkles of the release layer in the resin sealing process or the like can be more effectively suppressed. In the embodiment, the laminated film constituting the release film for the process is not necessarily clearly described as being more effective by using the specific value of the thermal dimensional change rate in the transverse (TD) direction. The mechanism for suppressing the occurrence of wrinkles of the release layer, but presumably with the thermal expansion of the release layer 1A (or the release layer 1A') caused by heating/cooling during the process by using a laminated film having a small thermal expansion/contraction. / Shrinkage can be suppressed to be related.

構成本實施形態的製程用離型薄膜的層積薄膜,其TD方向(橫方向)的從23℃到120℃為止的熱尺寸變化率在2.5%以下較佳,2.0%以下更佳,1.5%以下再更佳。另一方面,層積薄膜,其TD方向(橫方向)的從23℃到120℃為止的熱尺寸變化率為-5.0%以上較佳。 In the laminated film of the release film for a process of the present embodiment, the thermal dimensional change ratio from 23 ° C to 120 ° C in the TD direction (lateral direction) is preferably 2.5% or less, more preferably 2.0% or less, and 1.5%. The following is even better. On the other hand, in the laminated film, the thermal dimensional change rate from 23 ° C to 120 ° C in the TD direction (lateral direction) is preferably -5.0% or more.

構成本實施形態的製程用離型薄膜的層積薄膜,其TD方向(橫方向)的從23℃到170℃為止的熱尺寸變化率在3.5%以下較佳,3.0%以下更佳,2.0%以下再更佳。另一方面,層積薄膜,其TD方向(橫方向)的從23℃到170℃為止的熱尺寸變化率為-5.0%以上較佳。 In the laminated film of the release film for a process of the present embodiment, the thermal dimensional change rate from 23 ° C to 170 ° C in the TD direction (lateral direction) is preferably 3.5% or less, more preferably 3.0% or less, and 2.0%. The following is even better. On the other hand, in the laminated film, the thermal dimensional change rate from 23 ° C to 170 ° C in the TD direction (lateral direction) is preferably -5.0% or more.

包含離型層1A(及適其需要的離型層 1A’)、以及支撐該離型層的耐熱樹脂層1B的層積薄膜即本案第1發明的製程用離型薄膜,其TD方向(橫方向)的熱尺寸變化率與MD方向(薄膜製造時的長邊方向。以下,也稱「縱方向」)的熱尺寸變化率的和較佳為特定的值以下。 Contains release layer 1A (and suitable release layer) 1A'), and a laminated film of the heat-resistant resin layer 1B which supports the release layer, which is the film size change film in the TD direction (lateral direction) and the MD direction in the film release film of the first invention of the present invention. The longitudinal direction of the longitudinal direction. The sum of the thermal dimensional change rates of the "longitudinal direction" is also preferably a specific value or less.

也就是說,上述層積薄膜的橫(TD)方向的從23℃到120℃為止的熱尺寸變化率,與縱(MD)方向的從23℃到120℃為止的熱尺寸變化率的和在6%以下較佳,另一方面,前述層積薄膜,其TD方向(橫方向)的從23℃到120℃為止的熱尺寸變化率,與縱(MD)方向的從23℃到120℃為止的熱尺寸變化率的和在-5.0%以上較佳。 That is, the sum of the thermal dimensional change rates from 23 ° C to 120 ° C in the transverse (TD) direction of the laminated film and the thermal dimensional change rate from 23 ° C to 120 ° C in the longitudinal (MD) direction are 6% or less is preferable. On the other hand, the laminated film has a thermal dimensional change ratio from 23 ° C to 120 ° C in the TD direction (lateral direction) and 23 ° C to 120 ° C in the vertical (MD) direction. The sum of the thermal dimensional change rates is preferably -5.0% or more.

因為包含離型層1A(及適其需要的離型層1A’)、以及耐熱樹脂層1B的層積薄膜的橫(TD)方向的從23℃到120℃為止的熱尺寸變化率,與縱(MD)方向的從23℃到120℃為止的熱尺寸變化率的和在6%以下,能夠更有效地抑制在裝設至金屬模內面時的皺折產生。 The rate of change in thermal dimensionality from 23 ° C to 120 ° C in the transverse (TD) direction of the laminated film including the release layer 1A (and the release layer 1A' as needed) and the heat-resistant resin layer 1B, and the longitudinal The sum of the thermal dimensional change rates from 23 ° C to 120 ° C in the (MD) direction is 6% or less, and wrinkles generated when mounted on the inner surface of the metal mold can be more effectively suppressed.

此外,包含離型層1A(及適其需要的離型層1A’)、以及耐熱樹脂層1B的層積薄膜的橫(TD)方向的從23℃到170℃為止的熱尺寸變化率,與縱(MD)方向的從23℃到170℃為止的熱尺寸變化率的和在7%以下較佳,另一方面,前述層積薄膜,其TD方向(橫方向)的從23℃到170℃為止的熱尺寸變化率,與縱(MD)方向的從23℃到170℃為止的熱尺寸變化率的和在-5.0%以上較佳。 Further, the thermal dimensional change ratio from 23 ° C to 170 ° C in the transverse (TD) direction of the laminated film including the release layer 1A (and the release layer 1A' as needed) and the heat-resistant resin layer 1B is The sum of the thermal dimensional change rates from 23 ° C to 170 ° C in the longitudinal (MD) direction is preferably 7% or less. On the other hand, the laminated film has a TD direction (lateral direction) of from 23 ° C to 170 ° C. The sum of the thermal dimensional change rate and the thermal dimensional change ratio from 23 ° C to 170 ° C in the longitudinal (MD) direction is preferably -5.0% or more.

因為上述層積薄膜的橫(TD)方向的從23℃到170℃為止的熱尺寸變化率,與縱(MD)方向的從23℃到170℃為止的熱尺寸變化率的和在7%以下,能夠更有效地抑制在裝設至金屬模內面時的皺折產生。 The thermal dimensional change rate from 23 ° C to 170 ° C in the transverse (TD) direction of the laminated film is less than 7% from the thermal dimensional change rate from 23 ° C to 170 ° C in the longitudinal (MD) direction. It is possible to more effectively suppress wrinkles generated when mounted on the inner surface of the metal mold.

離型層1A Release layer 1A

構成本案第1發明的製程用離型薄膜的離型層1A,相對於水的接觸角為90°到130°,較佳為95°到120°,更佳為98°到115°,再更佳為100°到110°。因為成形品的優離型性,及入手的容易性等,包含從:氟樹脂、4-甲基-1-戊烯(共)聚合物、及聚苯乙烯系樹脂所構成的群中選出的樹脂較佳。 The release layer 1A constituting the release film for process of the first invention of the present invention has a contact angle with respect to water of from 90 to 130, preferably from 95 to 120, more preferably from 98 to 115, and furthermore. Good for 100° to 110°. It is selected from the group consisting of fluororesin, 4-methyl-1-pentene (co)polymer, and polystyrene resin because of the excellent release property of the molded article and the ease of handling. The resin is preferred.

能用於離型層1A的氟樹脂也可以包含由四氟乙烯而來的構成單位的樹脂。也可以是四氟乙烯的單獨聚合物,與其他烯烴的共聚物也可以。其他烯烴的例子也包含乙烯。作為單體構成單位,包含四氟乙烯與乙烯的共聚物為較佳的一例,在這種共聚物中,由四氟乙烯而來的構成單位的比例為55~100質量%,由乙烯而來的構成單位的比例為0~45質量%較佳。 The fluororesin which can be used for the release layer 1A may also contain a resin composed of tetrafluoroethylene. It may also be a single polymer of tetrafluoroethylene, and a copolymer with other olefins may also be used. Examples of other olefins also include ethylene. A copolymer comprising tetrafluoroethylene and ethylene is preferable as a monomer constituent unit. In such a copolymer, a ratio of constituent units derived from tetrafluoroethylene is 55 to 100% by mass, which is derived from ethylene. The proportion of the constituent units is preferably from 0 to 45% by mass.

能用於離型層1A的4-甲基-1-戊烯(共)共聚物可以是4-甲基-1-戊烯的單獨聚合物,此外也可以是4-甲基-1-戊烯、以及除此之外的碳原子數2~20的烯烴(以下稱為「碳原子數2~20的烯烴」)的共聚物。 The 4-methyl-1-pentene (co) copolymer which can be used for the release layer 1A may be a single polymer of 4-methyl-1-pentene, and may also be 4-methyl-1-pentyl A copolymer of an alkene and an olefin having 2 to 20 carbon atoms (hereinafter referred to as "an olefin having 2 to 20 carbon atoms").

4-甲基-1-戊烯、與碳原子數2~20的烯烴的共 聚物的情形,與4-甲基-1-戊烯共聚的碳原子數2~20的烯烴可以對4-甲基-1-戊烯賦予可撓性。碳原子數2~20的烯烴的例子,包含:乙烯、丙烯、1-丁烯、1-己烯、1-庚烯、1-辛烯、1-癸烯、1-十四烯、1-十六烯、1-十七烯、1-十八烯、1-二十烯等。該等烯烴可以僅用1種,也可以組合2種以上來使用。 4-methyl-1-pentene, co-linked with olefins having 2 to 20 carbon atoms In the case of a polymer, an olefin having 2 to 20 carbon atoms copolymerized with 4-methyl-1-pentene can impart flexibility to 4-methyl-1-pentene. Examples of the olefin having 2 to 20 carbon atoms include ethylene, propylene, 1-butene, 1-hexene, 1-heptene, 1-octene, 1-decene, 1-tetradecene, and 1- Hexadecene, 1-heptadecene, 1-octadecene, 1-eicosene, and the like. These olefins may be used alone or in combination of two or more.

4-甲基-1-戊烯、與碳原子數2~20的烯烴的共聚物的情形,由4-甲基-1-戊烯而來的構成單位的比例為96~99質量%,由其以外的碳原子數2~20的烯烴而來的構成單位的比例為1~4質量%較佳。因為使由碳原子數2~20的烯烴而來的構成單位的含有量較少,能硬化共聚物,也就是能提高儲藏彈性率E’,有利於抑制密封工程等的皺折產生。另一方面,因為使由碳原子數2~20的烯烴而來的構成單位的含有量較多,能軟化共聚物,也就是能降低儲藏彈性率E’,有利於提升金屬模追隨性。 In the case of a copolymer of 4-methyl-1-pentene and an olefin having 2 to 20 carbon atoms, the ratio of constituent units derived from 4-methyl-1-pentene is 96 to 99% by mass. The ratio of the constituent units derived from the olefin having 2 to 20 carbon atoms other than the above is preferably 1 to 4% by mass. Since the content of the constituent unit derived from the olefin having 2 to 20 carbon atoms is small, the copolymer can be cured, that is, the storage elastic modulus E' can be increased, which is advantageous in suppressing wrinkles such as sealing work. On the other hand, since the content of the constituent unit derived from the olefin having 2 to 20 carbon atoms is large, the copolymer can be softened, that is, the storage elastic modulus E' can be lowered, which contributes to the improvement of the mold followability.

4-甲基-1-戊烯(共)聚合物,通常知識者可以用習知的方法製造。例如,使用齊格勒-納塔催化劑,茂金屬系催化劑等習知的催化劑的方法來製造。4-甲基-1-戊烯(共)聚合物較佳為結晶性高的(共)聚合物。作為結晶性的共聚物,可以是具有等規構造的共聚物或具有間規構造的共聚物的任一者,特別是從物性的觀點來看,具有等規構造的共聚物較佳,而且入手也容易。再來4-甲基-1-戊烯(共)聚合物能成形成薄膜狀,若有抵抗金屬模成形時的溫度或壓力等的強度的話,對立體規則性或分子量 也沒有特別限制。4-甲基-1-戊烯共聚物,例如,可以是三井化學股份有限公司製TPX(註冊商標)等市售的共聚物。 The 4-methyl-1-pentene (co)polymer can be usually produced by a known method by a person skilled in the art. For example, it is produced by a method using a conventional catalyst such as a Ziegler-Natta catalyst or a metallocene catalyst. The 4-methyl-1-pentene (co)polymer is preferably a (co)polymer having high crystallinity. The crystalline copolymer may be any of a copolymer having an isotactic structure or a copolymer having a syndiotactic structure, and in particular, from the viewpoint of physical properties, a copolymer having an isotactic structure is preferable, and it is preferable to start It is also easy. Further, the 4-methyl-1-pentene (co)polymer can be formed into a film shape, and if it has strength against temperature or pressure at the time of molding the metal mold, it is stereoregular or molecular weight. There are also no special restrictions. The 4-methyl-1-pentene copolymer may be, for example, a commercially available copolymer such as TPX (registered trademark) manufactured by Mitsui Chemicals, Inc.

能用於離型層1A的聚苯乙烯系樹脂,包含苯乙烯的單獨聚合物及共聚物,包含於該聚合物中的由苯乙烯而來的構造單位至少為60重量%以上較佳,80重量%以上更佳。 The polystyrene resin which can be used for the release layer 1A contains a single polymer and a copolymer of styrene, and the structural unit derived from styrene contained in the polymer is at least 60% by weight or more, preferably 80. More preferably, the weight % or more.

聚苯乙烯系樹脂可以是等規聚苯乙烯也可以是間規聚苯乙烯,但從透明性、入手的容易性等觀點來看,等規聚苯乙烯較佳,離型性、耐熱性等的觀點來看,間規聚苯乙烯較佳。聚苯乙烯,可以單獨使用1種也可以併用2種以上。 The polystyrene-based resin may be isotactic polystyrene or syndiotactic polystyrene, but isotactic polystyrene is preferred from the viewpoints of transparency, ease of handling, and the like, and release property, heat resistance, and the like. From the point of view, syndiotactic polystyrene is preferred. The polystyrene may be used alone or in combination of two or more.

離型層1A較佳為具有能耐成形時的金屬模的溫度(典型為120~180℃)的耐熱性。從相關的觀點來看,作為離型層1A較佳為包含具有結晶成份的結晶性樹脂,該結晶性樹脂的熔點較佳為190℃以上,更佳為200℃以上300℃以下。 The release layer 1A preferably has heat resistance capable of withstanding the temperature of the mold at the time of molding (typically 120 to 180 ° C). From the related viewpoint, the release layer 1A preferably contains a crystalline resin having a crystalline component, and the crystalline resin preferably has a melting point of 190 ° C or higher, more preferably 200 ° C or higher and 300 ° C or lower.

因為在離型層1A帶有結晶性,例如在氟樹脂較佳為至少包含由四氟乙烯導出的構成單位,在4-甲基-1-戊烯(共)聚合物佳為至少包含由4-甲基-1-戊烯導出的構成單位,在聚苯乙烯系樹脂較佳為至少含有間規聚苯乙烯。因為在構成離型層1A的樹脂裡含有結晶成份,在樹脂密封工程等中不易產生皺折,適合抑制因皺折轉印成形品所產生的外觀不良。 Since the release layer 1A is crystalline, for example, the fluororesin preferably contains at least a constituent unit derived from tetrafluoroethylene, the 4-methyl-1-pentene (co)polymer preferably contains at least 4 The constituent unit derived from -methyl-1-pentene preferably contains at least syndiotactic polystyrene in the polystyrene resin. Since the crystal component is contained in the resin constituting the release layer 1A, wrinkles are less likely to occur in the resin sealing process or the like, and it is suitable to suppress the appearance defect caused by the wrinkle transfer molded article.

包含構成離型層1A的上述結晶性成份的樹脂,在以JISK7221為準並藉由示差掃描熱量測定(DSC)所測定的第1次昇溫工程中的結晶熔解熱量為15J/g以上且60J/g以下較佳,20J/g以上且50J/g以下更佳。若是15J/g以上的話,除了能更有效果地發現得到對樹脂密封工程等的熱壓印成形的耐熱性及離型性以外,也能抑制尺寸變化率,故也能防止皺折的產生。另一方面,若前述結晶熔解熱量為60J/g以下的話,因離型層1A為適切的硬度,在樹脂密封工程等能向薄膜的金屬模得到充分的追隨性,沒有薄膜破損的風險。 The resin containing the above-mentioned crystalline component constituting the release layer 1A has a crystal heat of fusion of 15 J/g or more and 60 J/ in the first temperature rising process measured by differential scanning calorimetry (DSC) based on JIS K7221. Preferably, g is more preferably 20 J/g or more and 50 J/g or less. When it is 15 J/g or more, it is found that the heat resistance and the release property of the hot stamping such as the resin sealing process can be more effectively obtained, and the dimensional change rate can be suppressed, so that the occurrence of wrinkles can be prevented. On the other hand, when the heat of crystal melting is 60 J/g or less, the release layer 1A has a suitable hardness, and sufficient followability to the mold of the film can be obtained in a resin sealing process or the like, and there is no risk of film breakage.

離型層1A除了氟樹脂、4-甲基-1-戊烯共聚合物、及/或聚苯乙烯系樹脂以外,也可以再包含其他樹脂。此時,其他的樹脂的硬度較高較佳。其他樹脂的例子,包含聚醯胺-6、聚醯胺-66、聚對苯二甲酸乙酯、聚對苯二甲酸乙酯。藉此,離型層1A例如在含有多的柔軟樹脂時(例如,在4-甲基-1-戊烯共聚物中,含有較多碳原子數2~20的烯烴時)也,因為更含有硬度比較高的樹脂,能使離型層1A硬化,對於密封工程等中皺折產生的抑制較有利。 The release layer 1A may further contain another resin in addition to the fluororesin, the 4-methyl-1-pentene copolymer, and/or the polystyrene resin. At this time, the hardness of the other resin is preferably higher. Examples of other resins include polyamine-6, polyamine-66, polyethylene terephthalate, and polyethylene terephthalate. Therefore, when the release layer 1A contains a large amount of a soft resin (for example, when a 4-methyl-1-pentene copolymer contains a large amount of an olefin having 2 to 20 carbon atoms), it is also contained. The resin having a relatively high hardness can harden the release layer 1A, and is advantageous for suppressing wrinkles in a sealing process or the like.

該等其他樹脂的含有量較佳為相對於構成離型層1A的樹脂成份,例如是3~30質量%。藉由使其他樹脂的含有量為3質量%以上,能夠因添加而呈現實質效果,使含有量為30質量%以下,能夠維持對金屬模或成形品的離型性。 The content of the other resin is preferably from 3 to 30% by mass based on the resin component constituting the release layer 1A. When the content of the other resin is 3% by mass or more, a substantial effect can be obtained by the addition, and the content is 30% by mass or less, and the release property to the mold or the molded article can be maintained.

此外離型層1A除了氟樹脂、4-甲基-1-戊烯(共)聚合物、及/或聚苯乙烯系樹脂以外,在不損及本案第1發明的目的範圍內,可以在薄膜用樹脂中配合耐熱安定劑、耐候安定劑、發鏽防止劑、耐銅害安定劑、抗靜電劑等一般習知的添加劑。該等添加劑的含有量相對於氟樹脂、4-甲基-1-戊烯共聚物、及/或聚苯乙烯系樹脂100重量份,例如可以是0.0001~10重量份。 Further, in addition to the fluororesin, the 4-methyl-1-pentene (co)polymer, and/or the polystyrene resin, the release layer 1A may be in the film without impairing the object of the first invention of the present invention. A conventionally known additive such as a heat stabilizer, a weathering stabilizer, a rust preventive agent, a copper-resistant stabilizer, or an antistatic agent is blended in the resin. The content of the additives may be, for example, 0.0001 to 10 parts by weight based on 100 parts by weight of the fluororesin, the 4-methyl-1-pentene copolymer, and/or the polystyrene resin.

離型層1A的厚度若相對成形品具有充分的離型性的話,並沒有特別的限制,通常是1~50μm,較佳為5~30μm。 The thickness of the release layer 1A is not particularly limited as long as it has sufficient release property with respect to the molded article, and is usually 1 to 50 μm, preferably 5 to 30 μm.

離型層1A的表面可以因應必要而具有凹凸形狀,藉此,能提升離型性。在離型層1A的表面賦予凹凸的方法並無特別限制,但可以採用壓印加工等一般的方法。 The surface of the release layer 1A can have a concavo-convex shape as necessary, whereby the release property can be improved. The method of providing the unevenness on the surface of the release layer 1A is not particularly limited, but a general method such as imprinting can be employed.

離型層1A’ Release layer 1A'

本案第1發明的製程用離型薄膜除了離型層1A及耐熱樹脂層1B以外,可以更具有離型層1A’。也就是說,本案第1發明的製程用離型薄膜,可以是包含以離型層1A、耐熱樹脂層1B、離型層1A’的順序層積的層積薄膜。 The release film for process of the first invention of the present invention may further have a release layer 1A' in addition to the release layer 1A and the heat resistant resin layer 1B. In other words, the release film for process of the first invention of the present invention may be a laminated film comprising a release layer 1A, a heat resistant resin layer 1B, and a release layer 1A'.

構成本案第1發明的製程用離型薄膜也可以的離型層1A’,相對於水的接觸角為90°到130°,較佳為95°到120°,更佳為98°到115°,再更佳為100°到110°。因此, 有關離型層1A’的優材質、構成、物性等,與上述中離型層1A的說明一樣。 The release film 1A' constituting the process release film of the first invention of the present invention may have a contact angle with respect to water of from 90 to 130, preferably from 95 to 120, more preferably from 98 to 115. More preferably, it is 100° to 110°. therefore, The excellent material, composition, physical properties and the like of the release layer 1A' are the same as those of the above-mentioned release layer 1A.

製程用離型薄膜,可以是與包含以離型層1A、耐熱樹脂層1B、離型層1A’的順序層積的層積薄膜時的離型層1A與離型層1A’為同一構成的層,也可以是不同構成的層。 The release film for the process may be the same as the release layer 1A and the release layer 1A' when a laminated film including the release layer 1A, the heat resistant resin layer 1B, and the release layer 1A' is laminated. Layers can also be layers of different compositions.

從彎曲的防止、或在任何面都有同樣的離型性因而造成的處理容易性等的觀點來看,離型層1A與離型層1A’為同一或大致同一的構成較佳,從與使用離型層1A與離型層1A’的製程之間的關係,分別作最適地設計的觀點來看,例如,從使離型層1A從金屬模的離型性佳,使離型層1A’從成形物的剝離性佳等的觀點來看,使離型層1A與離型層1A’為不同的構成較佳。 The release layer 1A and the release layer 1A' are preferably the same or substantially the same from the viewpoint of prevention of bending, or ease of handling due to the same release property on any surface, and the like. From the viewpoint of optimally designing the relationship between the process of the release layer 1A and the release layer 1A', for example, from the release property of the release layer 1A from the metal mold, the release layer 1A is made. From the viewpoint of good peelability of the molded article, etc., it is preferable to make the release layer 1A and the release layer 1A' different.

使離型層1A與離型層1A’為不同的構成時,可以使離型層1A與離型層1A’為同一材料但使厚度等的構成不同,也可以使材料和其他以外的構成都不同。 When the release layer 1A and the release layer 1A' are different from each other, the release layer 1A and the release layer 1A' may be made of the same material, but the thickness and the like may be different, and the material and other components may be used. different.

耐熱樹脂層1B Heat resistant resin layer 1B

構成本案第1發明的製程用離型薄膜的耐熱樹脂層1B支撐離型層1A(及根據情況為離型層1A’),且具有抑制因金屬模溫度等所造成的皺折產生的機能。 The heat-resistant resin layer 1B constituting the release film for process of the first aspect of the present invention supports the release layer 1A (and, as the case may be, the release layer 1A'), and has a function of suppressing wrinkles caused by the mold temperature or the like.

本案第1發明的製程用離型薄膜中,耐熱樹脂層1B的橫(TD)方向的從23℃到120℃為止的熱尺寸變化率為3%以下,或者耐熱樹脂層1B的橫(TD)方向的從23 ℃到170℃為止的熱尺寸變化率為3%以下較佳。再來,耐熱樹脂層1B,其橫(TD)方向的從23℃到120℃為止的熱尺寸變化率為3%以下且橫(TD)方向的從23℃到170℃為止的熱尺寸變化率為3%以下更佳。 In the release film for a process of the first aspect of the invention, the thermal dimensional change rate from 23 ° C to 120 ° C in the transverse (TD) direction of the heat resistant resin layer 1B is 3% or less, or the transverse direction (TD) of the heat resistant resin layer 1B. Directions from 23 The thermal dimensional change rate from °C to 170 °C is preferably 3% or less. In the heat-resistant resin layer 1B, the thermal dimensional change rate from 23 ° C to 120 ° C in the transverse (TD) direction is 3% or less and the thermal dimensional change rate from 23 ° C to 170 ° C in the transverse (TD) direction. More preferably 3% or less.

耐熱樹脂層1B的橫(TD)方向的從23℃到120℃為止的熱尺寸變化率為3%以下,或者耐熱樹脂層1B的橫(TD)方向的從23℃到170℃為止的熱尺寸變化率為3%以下,能更有效地抑制裝設於金屬模內面時的皺折產生。 The thermal dimensional change rate from 23 ° C to 120 ° C in the transverse (TD) direction of the heat resistant resin layer 1B is 3% or less, or the thermal size from 23 ° C to 170 ° C in the transverse (TD) direction of the heat resistant resin layer 1B. The rate of change is 3% or less, and wrinkles generated when mounted on the inner surface of the metal mold can be more effectively suppressed.

作為耐熱樹脂層1B,藉由採用表現出橫(TD)方向的熱尺寸變化率的上述特定值者,雖並不一定能夠明確說明抑制離型層的皺折發生的機制,但推測與藉由使用熱膨脹/收縮較小的耐熱樹脂層1B,製程時的加熱/冷卻所造成的離型層1A(或離型層1A’)的熱膨脹/收縮能夠被抑制有所關連。 As the heat-resistant resin layer 1B, the above-described specific value indicating the rate of change in the thermal dimension in the transverse (TD) direction is not necessarily able to clearly explain the mechanism for suppressing the occurrence of wrinkles in the release layer, but it is presumed and With the heat-resistant resin layer 1B having a small thermal expansion/contraction, the thermal expansion/contraction of the release layer 1A (or the release layer 1A') caused by the heating/cooling during the process can be suppressed from being correlated.

在耐熱樹脂層1B可以使用包含無延伸薄膜的任意樹脂層,但含有延伸薄膜特佳。 Any resin layer containing an unstretched film may be used in the heat resistant resin layer 1B, but it is particularly preferable to contain an extended film.

延伸薄膜因為在製造的過程中的延伸的影響,熱膨脹率會有變低或者成為負數的傾向,因為實現橫(TD)方向的從23℃到120℃為止的熱尺寸變化率為3%以下,或者耐熱樹脂層1B的橫(TD)方向的從23℃到170℃為止的熱尺寸變化率為3%以下這種特性較為容易,因此能適合作為耐熱樹脂層1B使用。 The elongation film has a tendency to become low or become a negative number due to the influence of the elongation during the production process, because the thermal dimensional change rate from 23 ° C to 120 ° C in the transverse (TD) direction is 3% or less. Further, since the thermal dimensional change rate of the heat-resistant resin layer 1B in the transverse (TD) direction from 23 ° C to 170 ° C is easily 3% or less, it can be suitably used as the heat-resistant resin layer 1B.

耐熱樹脂層1B的橫(TD)方向的從23℃到120℃為止的熱尺寸變化率在2%以下較佳,1.5%以下更佳,1% 以下再更佳,另一方面,-10%以上較佳。 The thermal dimensional change ratio of the heat-resistant resin layer 1B in the transverse (TD) direction from 23 ° C to 120 ° C is preferably 2% or less, more preferably 1.5% or less, and 1%. More preferably, on the other hand, -10% or more is preferred.

耐熱樹脂層1B的橫(TD)方向的從23℃到170℃為止的熱尺寸變化率在2%以下較佳,1.5%以下更佳,1%以下再更佳,另一方面,-10%以上較佳。 The thermal dimensional change ratio of the heat-resistant resin layer 1B in the transverse (TD) direction from 23 ° C to 170 ° C is preferably 2% or less, more preferably 1.5% or less, still more preferably 1% or less, and on the other hand, -10%. The above is preferred.

本案第1發明的製程用離型薄膜中,耐熱樹脂層1B的橫(TD)方向的從23℃到120℃為止的熱尺寸變化率,與縱(MD)方向的從23℃到120℃為止的熱尺寸變化率的和在6%以下,或耐熱樹脂層1B的橫(TD)方向的從23℃到170℃為止的熱尺寸變化率,與縱(MD)方向的從23℃到170℃為止的熱尺寸變化率的和在5%以下較佳。耐熱樹脂層1B的橫(TD)方向的從23℃到120℃為止的熱尺寸變化率,與縱(MD)方向的從23℃到120℃為止的熱尺寸變化率的和在6%以下較佳,而且,耐熱樹脂層1B的橫(TD)方向的從23℃到170℃為止的熱尺寸變化率,與縱(MD)方向的從23℃到170℃為止的熱尺寸變化率的和在5%以下更佳。因為耐熱樹脂層1B的橫(TD)方向的熱尺寸變化率,與縱(MD)方向的熱尺寸變化率的和在上述範圍內,能夠更有效地抑制在裝設至金屬模內面時的皺折產生。 In the release film for a process of the first aspect of the invention, the thermal dimensional change ratio from 23 ° C to 120 ° C in the transverse (TD) direction of the heat resistant resin layer 1B is from 23 ° C to 120 ° C in the longitudinal (MD) direction. The ratio of the thermal dimensional change rate is 6% or less, or the thermal dimensional change ratio from 23 ° C to 170 ° C in the transverse (TD) direction of the heat resistant resin layer 1B, and from 23 ° C to 170 ° C in the longitudinal (MD) direction. The sum of the thermal dimensional change rates up to 5% is preferable. The thermal dimensional change ratio from 23 ° C to 120 ° C in the transverse (TD) direction of the heat resistant resin layer 1B is less than 6% or less from the thermal dimensional change ratio from 23 ° C to 120 ° C in the longitudinal (MD) direction. Further, the thermal dimensional change ratio from 23 ° C to 170 ° C in the transverse (TD) direction of the heat resistant resin layer 1B and the thermal dimensional change ratio from 23 ° C to 170 ° C in the longitudinal (MD) direction are More than 5% is better. Since the thermal dimensional change rate in the transverse (TD) direction of the heat resistant resin layer 1B and the thermal dimensional change rate in the longitudinal (MD) direction are within the above range, it is possible to more effectively suppress the mounting to the inner surface of the metal mold. Wrinkles are produced.

耐熱樹脂層1B的橫(TD)方向的從23℃到120℃為止的熱尺寸變化率,與縱(MD)方向的從23℃到120℃為止的熱尺寸變化率的和為-3.0%以上5.0%以下較佳,-2.0%以上4.5%以下更佳。 The thermal dimensional change ratio from 23 ° C to 120 ° C in the transverse (TD) direction of the heat-resistant resin layer 1B is -3.0% or more from the thermal dimensional change ratio from 23 ° C to 120 ° C in the longitudinal (MD) direction. It is preferably 5.0% or less, more preferably -2.0% or more and 4.5% or less.

耐熱樹脂層1B的橫(TD)方向的從23℃到120℃為 止的熱尺寸變化率,與縱(MD)方向的從23℃到170℃為止的熱尺寸變化率的和為-15.5%以上5.0%以下較佳,-10.0%以上4.5%以下更佳。 The transverse (TD) direction of the heat resistant resin layer 1B is from 23 ° C to 120 ° C. The thermal dimensional change rate and the thermal dimensional change rate from 23 ° C to 170 ° C in the longitudinal (MD) direction are preferably -15.5% or more and 5.0% or less, more preferably -10.0% or more and 4.5% or less.

從使耐熱樹脂層1B的橫(TD)方向的熱尺寸變化率與縱(MD)方向的熱尺寸變化率的和在上述範圍內的觀點來看,對使用延伸薄膜是有利的,且對於適切地控制延伸條件是更有利的。 From the viewpoint of making the sum of the thermal dimensional change rate in the transverse (TD) direction of the heat resistant resin layer 1B and the thermal dimensional change rate in the longitudinal (MD) direction within the above range, it is advantageous to use the stretched film, and it is suitable for the use of the stretched film. It is more advantageous to control the extension conditions.

上述延伸薄膜可以是一軸延伸薄膜,也可以是二軸延伸薄膜。一軸延伸薄膜的情形,可以是縱延伸或者橫延伸,但至少期望是能向橫(TD)方向進行延伸者。 The above stretched film may be a one-axis stretch film or a biaxially stretch film. In the case of a one-axis stretch film, it may be a longitudinal extension or a lateral extension, but at least it is desirable to be able to extend in the transverse (TD) direction.

用以得到上述延伸薄膜的方法、裝置並沒有特別限制,以該技術領域的習知方法進行延伸即可。例如,可以利用加熱輥或拉幅式延伸機來延伸。 The method and apparatus for obtaining the above-mentioned stretched film are not particularly limited, and may be extended by a conventional method in the art. For example, it can be extended by a heating roller or a tenter type stretching machine.

作為上述延伸薄膜係使用從:延伸聚酯纖維薄膜、延伸聚醯胺薄膜、及延伸聚丙烯薄膜所構成的群中選出的延伸薄膜較佳。該等延伸薄膜,藉由延伸,比較容易使得橫(TD)方向的熱膨脹率降低,或使之成為負數,機械的物性適合本案第1發明的用途,此外因為較容易以低成本入手,作為耐熱樹脂層1B中的延伸薄膜特別適合。 As the above-mentioned stretched film, a stretched film selected from the group consisting of a stretched polyester fiber film, a stretched polyamide film, and an extended polypropylene film is preferably used. The stretched film is relatively easy to reduce the thermal expansion coefficient in the transverse (TD) direction or to be a negative number, and the mechanical properties are suitable for the use of the first invention of the present invention, and it is easier to start at a low cost as heat resistance. The stretched film in the resin layer 1B is particularly suitable.

作為延伸薄膜為延伸聚對苯二甲酸(PET)薄膜、延伸聚丁烯對苯二甲酸酯(PBT)薄膜較佳,二軸延伸聚對苯二甲酸(PET)薄膜更佳。 The stretch film is preferably a stretched polyethylene terephthalate (PET) film or a stretched polybutylene terephthalate (PBT) film, and a biaxially oriented polyethylene terephthalate (PET) film is more preferable.

對於構成延伸聚醯胺薄膜的聚醯胺並沒有特別限定,但較佳為能使用聚醯胺-6、聚醯胺-66等。 The polyamine which constitutes the extended polyamide film is not particularly limited, but polyamine-6, polyamine-66 or the like is preferably used.

作為延伸薄膜係能夠使用一軸延伸聚丙烯薄膜、二軸延伸聚丙烯薄膜等較佳。 As the stretched film, a one-axis stretched polypropylene film, a biaxially stretched polypropylene film, or the like can be preferably used.

對於延伸倍率並沒有特別限定,為了適切地控制熱尺寸變化率,能實現適合的機械性質,可以適宜地設定適切的值,但例如是延伸聚酯纖維薄膜時,在縱方向、橫方向一同為2.7~8.0倍的範圍較佳,當為延伸聚醯胺薄膜時,在縱方向、橫方向一同為2.7~5.0倍的範圍較佳,當為延伸聚丙烯薄膜時,二軸延伸聚丙烯薄膜時,在縱方向、橫方向一同為5.0~10.0倍的範圍較佳,當為一軸延伸聚丙烯薄膜時,在縱方向為1.5~10.0倍的範圍較佳。 The stretching ratio is not particularly limited. In order to appropriately control the rate of change in the thermal size, suitable mechanical properties can be achieved, and suitable values can be appropriately set. However, for example, when the polyester fiber film is stretched, the longitudinal direction and the transverse direction are together. The range of 2.7 to 8.0 times is preferable. When the polyimide film is extended, it is preferably in the range of 2.7 to 5.0 times in the longitudinal direction and the transverse direction, and when the polypropylene film is stretched, when the polypropylene film is biaxially stretched. It is preferably in the range of 5.0 to 10.0 times in the longitudinal direction and the transverse direction, and in the case of the one-axis stretching polypropylene film, it is preferably in the range of 1.5 to 10.0 times in the longitudinal direction.

耐熱樹脂層1B在從薄膜的強度、或將其熱尺寸變化率控制在適切的範圍的觀點來看,具有能耐成形時的金屬模溫度(典型為120~180℃)的耐熱性較佳。從相關的觀點來看,耐熱樹脂層1B包含具有結晶成份的結晶性樹脂較佳,該結晶性樹脂的熔點較佳為125℃以上,溶點更佳為155℃以上300℃以下,再更佳為185以上210℃以下,特佳為185以上205℃以下。 The heat-resistant resin layer 1B has heat resistance which is resistant to the mold temperature at the time of molding (typically 120 to 180 ° C) from the viewpoint of controlling the strength of the film or controlling the rate of change in the thermal size to a suitable range. From the related viewpoint, the heat resistant resin layer 1B preferably contains a crystalline resin having a crystalline component, and the crystalline resin preferably has a melting point of 125 ° C or more, more preferably a melting point of 155 ° C or more and 300 ° C or less, and further preferably. It is 185 or more and 210 ° C or less, and particularly preferably 185 or more and 205 ° C or less.

如同上述,耐熱樹脂層1B較佳為包含具有結晶成份的結晶性樹脂。作為耐熱樹脂層1B所含有的結晶性樹脂,例如可以使用其一部或全部聚酯樹脂、聚醯胺樹脂、聚丙烯樹脂等的結晶性樹脂。具體來說在聚酯纖維樹脂中使用聚對苯二甲酸或聚丁烯對苯二甲酸酯,在聚醯胺 樹脂中使用聚醯胺6或聚醯胺66,在聚丙烯樹脂中使用等規聚丙烯較佳。 As described above, the heat resistant resin layer 1B preferably contains a crystalline resin having a crystalline component. As the crystalline resin contained in the heat-resistant resin layer 1B, for example, a crystalline resin such as one or all of a polyester resin, a polyamide resin, or a polypropylene resin can be used. Specifically, polyterephthalic acid or polybutylene terephthalate is used in polyester fiber resin, in polyamine Polyamide 6 or polyamide 66 is used in the resin, and isotactic polypropylene is preferably used in the polypropylene resin.

因為使耐熱樹脂層1B包含前述結晶性樹脂的結晶成份,在樹脂密封工程等中不易產生皺折,對於抑制因皺折轉印成形品所產生的外觀不良更有利。 When the heat resistant resin layer 1B contains the crystal component of the crystalline resin described above, wrinkles are less likely to occur in the resin sealing process or the like, and it is more advantageous to suppress the appearance defect caused by the wrinkle transfer molded article.

構成耐熱樹脂層1B的樹脂,在以JISK7221為準並藉由示差掃描熱量測定(DSC)所測定的第1次昇溫工程中的結晶熔解熱量為20J/g以上且100J/g以下較佳,25J/g以上且65J/g以下更佳,25J/g以上且55J/g以下又更佳,28J/g以上且50J/g以下再更佳,28J/g以上且40J/g以下再更佳,28J/g以上且35J/g以下又再更佳。若是20J/g以上的話,能更有效果地發現在樹脂密封工程等的熱壓印成形的耐熱性及離型性,此外也能僅少抑制尺寸變化率,故也能防止皺折的產生。另一方面,若前述結晶熔解熱量為100J/g以下的話,因能夠對耐熱樹脂層1B賦予適切的硬度,在樹脂密封工程等能向薄膜的金屬模確保充分的追隨性,而且沒有薄膜破損的風險。此外,在本實施形態中,所謂的結晶熔解熱量為在以JISK7221為準並藉由示差掃描熱量測定(DSC)所測定的第1次昇溫工程中,在表示所得到的縱軸的熱量(J/g)與橫軸的溫度(℃)之間的關係的圖表中,從在120℃以上具有峰值的峰值面積之和所求得的數值。 The resin constituting the heat-resistant resin layer 1B is preferably 20 J/g or more and 100 J/g or less in the first heat-rise project measured by differential scanning calorimetry (DSC) based on JIS K7221, 25 J. /g or more and 65 J/g or less is more preferable, 25 J/g or more and 55 J/g or less are more preferable, and 28 J/g or more and 50 J/g or less are more preferable, and 28 J/g or more and 40 J/g or less are more preferable. 28J/g or more and 35J/g or less are even better. When it is 20 J/g or more, the heat resistance and the release property of the hot stamping molding such as the resin sealing process can be more effectively found, and the dimensional change rate can be suppressed only, so that the occurrence of wrinkles can be prevented. On the other hand, when the heat of the crystal melting heat is 100 J/g or less, the heat-resistant resin layer 1B can be given a suitable hardness, and the resin can be sufficiently adhered to the mold of the film, such as a resin sealing process, and the film is not damaged. risk. Further, in the present embodiment, the heat of crystal melting is a heat amount indicating the obtained vertical axis in the first temperature rising process measured by differential scanning calorimetry (DSC) based on JIS K7221 (J). /g) A numerical value obtained from the sum of the peak areas having peaks at 120 ° C or higher in the graph of the relationship with the temperature of the horizontal axis (° C.).

耐熱樹脂層1B的結晶熔解熱量可以因應薄膜製造時的加熱、冷卻的條件、或延伸條件作適宜設定來調節。 The heat of crystal melting of the heat resistant resin layer 1B can be adjusted in accordance with heating, cooling conditions, or elongation conditions at the time of film production.

耐熱樹脂層1B的厚度若能確保薄膜強度的話,沒有特別的限制,但通常為1~100μm,較佳為5~50μm。 The thickness of the heat-resistant resin layer 1B is not particularly limited as long as the film strength can be ensured, but it is usually 1 to 100 μm, preferably 5 to 50 μm.

除此之外的層 Layer other than this

本案第1發明的製程用離型薄膜只要在不違反本案第1發明的目的內,也可以具有離型層1A、耐熱樹脂層1B、及離型層1A’以外的層。例如,在離型層1A(或離型層1A’)與耐熱樹脂層1B之間可以因應必要具有黏接層。用於黏接層的材料若是能夠將離型層1A與耐熱樹脂層1B強固著黏接,且在樹脂密封工程及離型工程中也不會剝離者的話,並沒有特別的限制。 The release film for process of the first aspect of the invention may have a layer other than the release layer 1A, the heat resistant resin layer 1B, and the release layer 1A' as long as it does not contradict the object of the first invention. For example, an adhesive layer may be provided between the release layer 1A (or the release layer 1A') and the heat resistant resin layer 1B as necessary. The material for the adhesive layer is not particularly limited as long as it can strongly bond the release layer 1A and the heat-resistant resin layer 1B, and does not peel off in the resin sealing process and the release process.

例如,離型層1A(或離型層1A’)包含4-甲基-1-戊烯共聚物時,黏接層較佳為從不飽和羧酸等接枝改性的改性4-甲基-1-戊烯系共聚物樹脂、由4-甲基-1-戊烯系共聚物與α-烯烴系共聚物形成的烯烴系黏接樹脂等。離型層1A(或離型層1A’)包含氟樹脂時,黏接層較佳為聚酯系、丙烯酸系、氟橡膠系等的黏著劑。黏接層的厚度若能提升離型層1A(或離型層1A’)與耐熱樹脂層1B之間黏接性的話,並沒有特別的限制,但例如為0.5~10μm。 For example, when the release layer 1A (or the release layer 1A') comprises a 4-methyl-1-pentene copolymer, the adhesive layer is preferably a modified 4-methyl group modified by grafting with an unsaturated carboxylic acid or the like. A -1-pentene-based copolymer resin, an olefin-based adhesive resin formed of a 4-methyl-1-pentene-based copolymer and an α-olefin-based copolymer. When the release layer 1A (or the release layer 1A') contains a fluororesin, the adhesive layer is preferably an adhesive such as a polyester-based, acrylic-based or fluororubber-based adhesive. The thickness of the adhesive layer is not particularly limited as long as it improves the adhesion between the release layer 1A (or the release layer 1A') and the heat resistant resin layer 1B, but is, for example, 0.5 to 10 μm.

本案第1發明的製程用離型薄膜的總厚度雖沒有特別的限制,但例如較佳為10~300μm,更佳為30~150μm。若離型薄膜的總厚度在上述範圍內的話,在作 為捲物使用時的處理性良好的同時,薄膜的廢棄量較少,因此較佳。 The total thickness of the release film for a process according to the first aspect of the invention is not particularly limited, but is, for example, preferably 10 to 300 μm, more preferably 30 to 150 μm. If the total thickness of the release film is within the above range, It is preferable that the handleability when using the roll is good and the amount of waste of the film is small.

以下,更具體地說明有關本案第1發明的製程用離型薄膜的較佳實施形態。圖1為表示3層構造的製程用離型薄膜的一例之模式圖。如圖1所示,離型薄膜10具有:耐熱樹脂層12、在其一面隔著黏接層14而形成的離型層16。 Hereinafter, a preferred embodiment of the release film for a process according to the first invention of the present invention will be described more specifically. FIG. 1 is a schematic view showing an example of a release film for a three-layer structure. As shown in FIG. 1, the release film 10 has a heat resistant resin layer 12 and a release layer 16 formed on one surface thereof via an adhesive layer 14.

離型層16為前述的離型層1A,耐熱樹脂層12為前述的耐熱樹脂層1B,黏接層14為前述的黏接層。離型層16在封裝製程中配置於與封裝樹脂相接側較佳;耐熱樹脂層12在封裝製程中配置於與金屬模內面相接側較佳。 The release layer 16 is the aforementioned release layer 1A, the heat resistant resin layer 12 is the aforementioned heat resistant resin layer 1B, and the adhesive layer 14 is the aforementioned adhesive layer. The release layer 16 is preferably disposed on the side in contact with the encapsulating resin in the packaging process; and the heat resistant resin layer 12 is preferably disposed on the side in contact with the inner surface of the metal mold in the packaging process.

圖2為表示5層構造的製程用離型薄膜的一例之模式圖。與圖1具有同一機能的構件會附加同一符號。如圖2所示,離型薄膜20具有:耐熱樹脂層12、在其兩面隔著黏接層14而形成的離型層16A及離型層16B。離型層16A為前述的離型層1A,耐熱樹脂層12為前述的耐熱樹脂層1B,離型層16B為前述的離型層1A’,黏接層14為前述的黏接層。 2 is a schematic view showing an example of a release film for a process having a five-layer structure. Components having the same functions as those of Fig. 1 will be given the same reference numerals. As shown in FIG. 2, the release film 20 has a heat resistant resin layer 12, and a release layer 16A and a release layer 16B which are formed on the both surfaces thereof via the adhesive layer 14. The release layer 16A is the above-mentioned release layer 1A, the heat resistant resin layer 12 is the above-mentioned heat resistant resin layer 1B, the release layer 16B is the above-mentioned release layer 1A', and the adhesive layer 14 is the aforementioned adhesive layer.

離型層16A及16B的組成可以互相相同或相異。離型層16A及16B的厚度也可以互相相同或相異。但是,若離型層16A及16B相互具有相同的組成及厚度的話,會成為對稱構造,因變得難以產生離型薄膜自體的彎曲所以較佳。特別是,本案第1發明的離型薄膜在封裝 製程中因加熱會產生應力,因此在抑制彎曲上較佳。因此,離型層16A及16B在耐熱樹脂層12的兩面形成後,成形品及金屬模內面的任一者,都能夠得到良好的離型性因此較佳。 The composition of the release layers 16A and 16B may be the same or different from each other. The thickness of the release layers 16A and 16B may also be the same or different from each other. However, if the release layers 16A and 16B have the same composition and thickness, they will have a symmetrical structure, and it is preferable that the release film is hard to be bent by itself. In particular, the release film of the first invention of the present invention is packaged. In the process, stress is generated by heating, and therefore it is preferable to suppress bending. Therefore, after the release layers 16A and 16B are formed on both surfaces of the heat-resistant resin layer 12, it is preferable that either of the molded article and the inner surface of the mold can obtain good release property.

製程用離型薄膜的製造方法 Method for manufacturing release film for process

本案第1發明的製程用離型薄膜可以由任意的方法來製造。例如,有(1)藉由將離型層1A與耐熱樹脂層1B共壓出成形而層積,來製造製程用離型薄膜的方法(共壓出形成法)、(2)在成為耐熱樹脂層1B的薄膜上,將成為離型層1A或黏接層的樹脂的溶融樹脂塗佈/乾燥,或將成為離型層1A或黏接層的樹脂溶解在溶劑的樹脂溶液塗佈/乾燥,來製造製程用離型薄膜的方法(塗佈法)、(3)預先製造成為離型層1A的薄膜、成為耐熱樹脂層1B的薄膜,將該等薄膜層積(層合),藉此製造製程用離型薄膜的方法(層合法)等。 The release film for process of the first invention of the present invention can be produced by any method. For example, (1) a method of manufacturing a release film for a process by laminating a release layer 1A and a heat resistant resin layer 1B by co-extrusion molding (co-extrusion formation method), and (2) becoming a heat resistant resin On the film of the layer 1B, a molten resin which is a resin of the release layer 1A or the adhesive layer is applied/dried, or a resin solution in which the resin which becomes the release layer 1A or the adhesive layer is dissolved in a solvent is applied/dried, A method of producing a release film for a process (coating method), (3) a film which is a release layer 1A, a film which is a heat resistant resin layer 1B, and a film (layer) of the film are laminated A method of using a release film for a process (layering) or the like.

在(3)的方法中,作為層積各樹脂薄膜的方法,可以採用習知的各種層合方法,例如壓出層合法、乾式層合法、熱層合法等。 In the method of (3), as a method of laminating the respective resin films, various conventional lamination methods such as extrusion lamination, dry lamination, thermal lamination, and the like can be employed.

乾式層合法係利用黏接劑來層積各樹脂薄膜。作為黏接劑,可以使用作為乾式層合用的黏接劑的習知黏接劑。例如可以使用:聚乙酸乙烯酯系黏接劑;丙烯酸酯(丙烯酸乙酯、丙烯酸丁酯、丙烯酸2-乙基己基酯等)的單獨聚合物或者共聚物、或丙烯酸酯與其他單體(甲基丙烯酸甲 酯、丙烯腈、苯乙烯等)的共聚物等所形成的聚丙烯酸酯系黏接劑;氰基丙烯酸酯系黏接劑;乙烯與其他單體(醋酸乙烯基、丙烯酸酸乙基、丙烯酸酸、甲基丙烯酸等)的共聚物等所形成的乙烯共聚物系黏接劑;纖維素系黏接劑;聚酯系黏接劑;聚醯胺系黏接劑;聚醯亞胺系黏接劑;尿素樹脂或三聚氰胺樹脂等所形成的氨樹脂系黏接劑;苯酚樹脂系黏接劑;環氧系黏接劑;多元醇(聚醚多元醇、聚酯多元醇等)與異氰酸酯及/或與異氰脲酸酯交聯的聚氨酯系黏接劑;反應型(甲基)丙烯酸系黏接劑;由氯丁橡膠、丁腈橡膠、苯乙烯-丁二烯橡膠等所形成的橡膠系黏接劑;由有機矽系黏接劑;鹼金屬矽酸鹽、低熔點玻璃等所形成的無機系黏接劑;其他等的黏接劑。由(3)的方法所層積的樹脂薄膜可以使用市售者,也可以使用藉由習知的製造方法所製造者。對樹脂薄膜也可以施序電暈處理、大氣壓電漿處理、真空電漿處理、底塗層塗工處理等的表面處理。作為樹脂薄膜的製造方法,並沒有特別的限定,可以利用習知的製造方法。 The dry layer method uses an adhesive to laminate each resin film. As the adhesive, a conventional adhesive which is an adhesive for dry lamination can be used. For example, a polyvinyl acetate-based adhesive; a separate polymer or copolymer of acrylate (ethyl acrylate, butyl acrylate, 2-ethylhexyl acrylate, etc.), or an acrylate and other monomers can be used. Acrylic acid Polyacrylate adhesive formed by copolymer of ester, acrylonitrile, styrene, etc.; cyanoacrylate adhesive; ethylene and other monomers (vinyl acetate, ethyl acrylate, acrylic acid) An ethylene copolymer-based adhesive formed by a copolymer such as methacrylic acid or the like; a cellulose-based adhesive; a polyester-based adhesive; a polyamide-based adhesive; and a polyimide-based adhesive An ammonia resin-based adhesive formed by a urea resin or a melamine resin; a phenol resin-based adhesive; an epoxy-based adhesive; a polyol (polyether polyol, polyester polyol, etc.) and isocyanate and/or Or a polyurethane-based adhesive cross-linked with isocyanurate; a reactive (meth)acrylic adhesive; a rubber system formed of neoprene, nitrile rubber, styrene-butadiene rubber, or the like Adhesive; inorganic binder composed of organic lanthanum binder; alkali metal citrate, low melting point glass; other adhesives. The resin film laminated by the method of (3) can be used commercially, or can be manufactured by a conventional manufacturing method. The resin film may also be subjected to surface treatment such as corona treatment, atmospheric piezoelectric slurry treatment, vacuum plasma treatment, and primer coating treatment. The method for producing the resin film is not particularly limited, and a known production method can be used.

(1)共壓出成形法不易在成為離型層1A的樹脂層與成為耐熱樹脂層1B的樹脂層之間產生異物卡住等所造成的缺陷、或離型薄膜的彎曲這點較佳。(3)層合法為在耐熱樹脂層1B使用延伸薄膜時所適合的製造方法。此時,因應必要在薄膜之間的界面形成適切的黏接層較佳。在提高薄膜之間的黏接性後,在薄膜之間的界面可以因應必要施加電暈放帶處理等的表面處理。 (1) The co-extrusion molding method is less likely to cause defects such as a foreign matter jam or the like, or a bending of the release film between the resin layer which is the release layer 1A and the resin layer which becomes the heat-resistant resin layer 1B. (3) The layering method is a manufacturing method suitable for the use of the stretched film in the heat resistant resin layer 1B. At this time, it is preferable to form a suitable adhesive layer at the interface between the films as necessary. After the adhesion between the films is improved, the interface between the films may be subjected to a surface treatment such as corona discharge treatment.

製程用離型薄膜可以因應必要作1軸或2軸延伸,藉此提高薄膜的膜強度。 The release film for the process can be extended in one or two axes as necessary, thereby increasing the film strength of the film.

上述(2)的塗佈法中的塗佈手段,並沒有特別的限定,但例如可以使用輥塗佈機、鑄模塗佈機、噴塗塗佈機等的各種塗佈機。溶融壓出手段並沒有特別的限定,例如可以使用具有T型鑄模或膨脹型鑄模的壓出機等。 The coating means in the coating method of the above (2) is not particularly limited, and for example, various coating machines such as a roll coater, a die coater, and a spray coater can be used. The means for melting and extruding is not particularly limited, and for example, an extruder having a T-shaped mold or an expanded mold can be used.

製造過程 Manufacturing process

本案第1發明的製程用離型薄膜,係能在金屬模內配置半導體晶片等將樹脂注入成形時,在半導體晶片等與金屬模內面之間配置並使用。因為用本案第1發明的製程用離型薄膜,能夠有效地防止從金屬模的離型不良、毛邊的發生等。 In the release film for a process according to the first aspect of the invention, a semiconductor wafer or the like can be placed in a mold, and when a resin is injection-molded, it can be disposed between a semiconductor wafer or the like and the inner surface of the mold. According to the release film for a process of the first aspect of the invention, it is possible to effectively prevent the release of the mold from the mold, the occurrence of burrs, and the like.

上述製造過程所用的樹脂可以是熱塑性樹脂、熱固性樹脂的任一者,但在該技術領域中,熱固性樹脂已被廣泛地使用,特別是使用環氧系的熱固性樹脂較佳。 The resin used in the above production process may be any of a thermoplastic resin and a thermosetting resin, but thermosetting resins have been widely used in the technical field, and particularly, an epoxy-based thermosetting resin is preferable.

作為上述製造過程,半導體晶片的封裝是最具代表性的,但並不以此為限,本案第1發明也可以適用於纖維強化塑膠成形製程、塑膠透鏡成形製程等。 As the above-mentioned manufacturing process, the packaging of the semiconductor wafer is the most representative, but it is not limited thereto, and the first invention of the present invention can also be applied to a fiber reinforced plastic molding process, a plastic lens forming process, and the like.

圖3、圖4A及圖4B為表示使用本案第1發明的離型薄膜的樹脂封裝半導體的製造方法的一例之模式圖。 3, FIG. 4A and FIG. 4B are schematic diagrams showing an example of a method of producing a resin-packaged semiconductor using the release film of the first invention of the present invention.

如圖3a所示,將本案第1發明的離型薄膜1從輥狀 的捲物藉由輥1-2及輥1-3供應至成形金屬模2內。接著,將離型薄膜1配置於上模2的內面。因應必要,也可以將上模2內面抽真空,使離型薄膜1緊密附著於上模2內面。在製模成形裝置的下金屬模5,配置有在基板上配置的半導體晶片6,藉由在該半導體晶片6上分配封裝樹脂、或注入液狀封裝樹脂以覆蓋半導體晶片6,在配置經排氣吸引並緊密附著的離型薄膜1的上金屬模2與下金屬模5之間,收容封裝樹脂4。接著如圖3b所示,將上金屬模2及下金屬模5夾住本案第1發明的離型薄膜1而閉模,並使封裝樹脂4硬化。 As shown in Fig. 3a, the release film 1 of the first invention of the present invention is taken from a roll shape. The roll is supplied into the forming mold 2 by the rolls 1-2 and the rolls 1-3. Next, the release film 1 is placed on the inner surface of the upper mold 2. If necessary, the inner surface of the upper mold 2 may be evacuated to closely adhere the release film 1 to the inner surface of the upper mold 2. In the lower mold 5 of the molding apparatus, a semiconductor wafer 6 disposed on a substrate is disposed, and a sealing resin is dispensed on the semiconductor wafer 6, or a liquid encapsulating resin is injected to cover the semiconductor wafer 6, and the arrangement is arranged. The encapsulating resin 4 is housed between the upper metal mold 2 and the lower metal mold 5 of the release film 1 which is attracted and adhered to the air. Next, as shown in FIG. 3b, the upper mold 2 and the lower mold 5 are sandwiched between the release film 1 of the first invention of the present invention to close the mold, and the sealing resin 4 is cured.

藉由閉模硬化,如圖3c所示,封裝樹脂4在金屬模內流動化,且封裝樹脂4流入空間部並以包圍半導體晶片6的側面周圍的方式填充,之後使上金屬模2與下金屬模5開模,而將經封裝的半導體晶片6取出。經開模,並取出成形品後,將離型薄膜1作複數次反覆利用,並供應新的離型薄膜,接著,附於樹脂製模成形。 By the mold hardening, as shown in FIG. 3c, the encapsulating resin 4 is fluidized in the metal mold, and the encapsulating resin 4 flows into the space portion and is filled in such a manner as to surround the side surface of the semiconductor wafer 6, and then the upper metal mold 2 and the lower side are made. The metal mold 5 is opened, and the packaged semiconductor wafer 6 is taken out. After the mold is opened and the molded article is taken out, the release film 1 is repeatedly used in plural times, and a new release film is supplied, followed by molding with a resin.

使本案第1發明的離型薄膜緊密附著於上金屬模,並使之介於金屬模與封裝樹脂之間,防止因樹脂製模而在金屬模的樹脂的附著,不會汙染金屬模的樹脂製模面,且容易使成形品離型。 The release film of the first invention of the present invention is closely adhered to the upper metal mold and interposed between the metal mold and the encapsulating resin to prevent adhesion of the resin to the mold due to resin molding, and does not contaminate the resin of the mold. The molding surface is molded and the molded article is easily released.

此外,可以在每一次的樹脂製模操作時供應新的離型薄膜進行樹脂製模,也可以在複數次的樹脂製模操作時供應新的離型薄膜進行樹脂製模。 Further, a new release film may be supplied for resin molding every time the resin molding operation is performed, or a new release film may be supplied for resin molding at a plurality of resin molding operations.

作為封裝樹脂,可以是液狀樹脂,在常溫呈 固態的樹脂也可以,但可以適當地採用在樹脂封裝時成為液狀等的封裝材。作為封裝樹脂材料,具體來說,主要可以採用環氧系(聯苯型環氧樹脂、雙酚環氧樹脂,鄰-甲酚酚醛清漆型環氧樹脂等),作為環氧樹脂以外的封裝樹脂,可以採用聚醯亞胺系樹脂(雙馬來醯亞胺系)、矽氧烷系樹脂(熱硬化附加型)等作為封裝樹脂而常被使用者。此外,作為樹脂封裝條件,雖因所使用的封裝樹脂而有不同,但例如可以在硬化溫度為120℃~180℃、成形壓力為10~50kg/cm2、硬化時間為1~60分的範圍作適當的設定。 The encapsulating resin may be a liquid resin, and may be a resin which is solid at normal temperature. However, a sealing material which becomes liquid or the like at the time of resin encapsulation can be suitably used. As the encapsulating resin material, specifically, an epoxy type (biphenyl type epoxy resin, bisphenol epoxy resin, o-cresol novolac type epoxy resin, etc.) can be mainly used as an encapsulating resin other than epoxy resin. A polyimide-based resin (a bismaleimide-based resin) or a siloxane-based resin (a thermosetting-added type) can be used as a sealing resin, and is often used by a user. Further, the resin encapsulating conditions differ depending on the encapsulating resin to be used, but may be, for example, a curing temperature of 120 to 180 ° C, a molding pressure of 10 to 50 kg/cm 2 , and a curing time of 1 to 60 minutes. Make the appropriate settings.

將離型薄膜1配置於成形金屬模8的內面的工程、將半導體晶片6配置於成形金屬模8內的工程的前後順序並沒有特別的限制,可以同時進行,在配置半導體晶片6後,配置離型薄膜1也可以,在配置離型薄膜1後,配置半導體晶片6也可以。 The process of disposing the release film 1 on the inner surface of the molding die 8 and the order of the process of disposing the semiconductor wafer 6 in the molding die 8 are not particularly limited, and may be performed simultaneously. After the semiconductor wafer 6 is placed, The release film 1 may be disposed, and the semiconductor wafer 6 may be disposed after the release film 1 is disposed.

因此,因為離型薄膜1具有高離型性的離型層1A(及適其需要的離型層1A’),容易將半導體封裝體4-2離型。此外,離型薄膜1因為有適度的柔軟性,對金屬模形狀的追隨性佳,同時也不容易因成形金屬模8的熱而成為皺折。因此,皺折不會被轉印至經封裝的半導體封裝體4-2的樹脂封裝面,也不會生成未填充樹脂的部分(樹脂缺陷),並能得到外觀良好的封裝半導體封裝體4-2。 Therefore, since the release film 1 has the release layer 1A having high release property (and the release layer 1A' which is required), the semiconductor package 4-2 is easily released. Further, the release film 1 has good flexibility, has good followability to the shape of the metal mold, and is not easily wrinkled by the heat of the molding die 8. Therefore, the wrinkles are not transferred to the resin package surface of the packaged semiconductor package 4-2, and no resin-filled portion (resin defect) is formed, and a packaged semiconductor package having a good appearance can be obtained 4- 2.

此外,不限於圖3所示的那種將固態的封裝 樹脂材料4加壓加熱的壓縮成型法,也可以採用後述的注入流動狀態的封裝樹脂材料的轉移製模法。 In addition, it is not limited to the solid package as shown in FIG. In the compression molding method in which the resin material 4 is pressurized and heated, a transfer molding method of encapsulating a resin material in a flow state to be described later may be employed.

圖4A及圖4B為表示使用本案第1發明的離型薄膜的樹脂封裝半導體的製造方法的一例,亦即轉移製模法的模式圖。 4A and 4B are schematic views showing an example of a method of producing a resin-packaged semiconductor using the release film of the first invention of the present invention, that is, a transfer molding method.

如圖4A所示,將本案第1發明的離型薄膜22從輥狀的捲物藉由輥24及輥26供應至成形金屬模28內(工程a)。接著,將離型薄膜22配置於上模30的內面30A(工程b)。因應必要,也可以將上模內面30A抽真空,使離型薄膜22緊密附著於上模內面30A。接著,在成形金屬模28內,配置應封裝樹脂的半導體晶片34(固定於基板34A的半導體晶片34),並設置封裝樹脂材料36(工程c),再合模(工程d)。 As shown in FIG. 4A, the release film 22 of the first invention of the present invention is supplied from a roll-shaped roll to the forming mold 28 by a roll 24 and a roll 26 (Engineering a). Next, the release film 22 is placed on the inner surface 30A of the upper mold 30 (engineering b). If necessary, the upper mold inner surface 30A may be evacuated to closely adhere the release film 22 to the upper mold inner surface 30A. Next, in the molding die 28, a semiconductor wafer 34 (a semiconductor wafer 34 fixed to the substrate 34A) to be encapsulated is placed, and a sealing resin material 36 (engineering c) is placed, and the mold is closed (engineering d).

接著,如圖4B所示,在預定的加熱及加壓條件下,在成形金屬模28內柱入封裝樹脂材料36(工程e)。此時的成形金屬模28的溫度(成形溫度),例如為165~185℃,成形壓力為例如7~12MPa,成形時間為例如90秒左右。接著,經一定時間的保持後,打開上模30及下模32,將經樹脂封裝的半導體封裝體40及離型薄膜22同時或依序離型(工程f)。 Next, as shown in FIG. 4B, the encapsulating resin material 36 is post-injected into the forming mold 28 under a predetermined heating and pressing condition (Engineering e). The temperature (forming temperature) of the molding die 28 at this time is, for example, 165 to 185 ° C, the molding pressure is, for example, 7 to 12 MPa, and the molding time is, for example, about 90 seconds. Next, after holding for a certain period of time, the upper mold 30 and the lower mold 32 are opened, and the resin-encapsulated semiconductor package 40 and the release film 22 are simultaneously or sequentially released (engineering f).

接著,如圖5所示,在得到的半導體封裝體40中,藉由除去剩餘的樹脂部分42,能得到所期望的半導體封裝體44。離型薄膜22可以以此原狀使用於其他的半導體晶片的樹脂封裝,但在每一次成形結束時操作輥而 送出薄膜,將新的離型薄膜22供應至成形金屬模28較佳。 Next, as shown in FIG. 5, in the obtained semiconductor package 40, the desired semiconductor package 44 can be obtained by removing the remaining resin portion 42. The release film 22 can be used as it is in the resin package of other semiconductor wafers, but the roller is operated at the end of each molding. It is preferable to feed the film and supply the new release film 22 to the forming metal mold 28.

將離型薄膜22配置於成形金屬模28的內面的工程、將半導體晶片34配置於成形金屬模28內的工程的前後順序並沒有特別的限制,可以同時進行,在配置半導體晶片34後,配置離型薄膜22也可以,在配置離型薄膜22後,配置半導體晶片34也可以。 The process of disposing the release film 22 on the inner surface of the molding die 28 and the order of the process of disposing the semiconductor wafer 34 in the molding die 28 are not particularly limited, and may be performed simultaneously. After the semiconductor wafer 34 is placed, The release film 22 may be disposed, and the semiconductor wafer 34 may be disposed after the release film 22 is disposed.

因此,因為離型薄膜22具有高離型性的離型層1A(及適其需要的離型層1A’),容易將半導體封裝體40離型。此外,離型薄膜22因為有適度的柔軟性,對金屬模形狀的追隨性佳,同時也不容易因成形金屬模28的熱而成為皺折。因此,皺折不會被轉印至半導體封裝體40的樹脂封裝面,也不會生成未填充樹脂的部分(樹脂缺陷),並能得到外觀良好的半導體封裝體40。 Therefore, since the release film 22 has the release layer 1A having high release property (and the release layer 1A' which is required), the semiconductor package 40 is easily released. Further, since the release film 22 has moderate flexibility, it has a good followability to the shape of the metal mold, and is not easily wrinkled by the heat of the molding die 28. Therefore, the wrinkles are not transferred to the resin package surface of the semiconductor package 40, and a portion (resin defect) in which the resin is not filled is not formed, and the semiconductor package 40 having a good appearance can be obtained.

本案第1發明的離型薄膜並不限於將半導體元件樹脂封裝的工程,在利用成型金屬模,將各種成形品成形及離型的工程,例如纖維強化塑膠成形及離型工程、塑膠透鏡成形及離型工程等中也可以較佳地被使用。 The release film of the first invention of the present invention is not limited to a process of encapsulating a semiconductor element resin, and is a process of molding and releasing various molded articles by using a molding die, for example, fiber reinforced plastic molding and release molding, plastic lens molding, and It is also preferable to use it in a release type project or the like.

製程用離型薄膜 Process release film

本案第2發明的製程用離型薄膜包含以下4態樣。 The release film for process of the second invention of the present invention comprises the following four aspects.

(第2-1態樣) (2-1st aspect)

一種製程用離型薄膜,係包含離型層2A、耐熱樹脂層2B的層積薄膜,其中, 前述離型層2A相對於水的接觸角為90°到130°;前述耐熱樹脂層2B包含含有高分子系抗靜電劑的層2B1;前述層積薄膜的在120℃的拉伸彈性率為75MPa到500MPa。 A release film for a process, comprising a laminated film comprising a release layer 2A and a heat resistant resin layer 2B, wherein The contact angle of the release layer 2A with respect to water is 90° to 130°; the heat resistant resin layer 2B comprises a layer 2B1 containing a polymer-based antistatic agent; and the tensile modulus of the laminate film at 120° C. is 75 MPa. To 500MPa.

(第2-2態樣) (2-2 aspect)

一種製程用離型薄膜,係包含離型層2A、耐熱樹脂層2B的層積薄膜,其中,前述離型層2A相對於水的接觸角為90°到130°;前述耐熱樹脂層2B包含含有高分子系抗靜電劑的層2B1;前述層積薄膜的在170℃的拉伸彈性率為75MPa到500MPa。 A release film for a process comprising a release film 2A and a heat resistant resin layer 2B, wherein the release layer 2A has a contact angle with respect to water of 90° to 130°; and the heat resistant resin layer 2B contains The layer 2B1 of the polymer antistatic agent; and the tensile modulus of the laminated film at 170 ° C is 75 MPa to 500 MPa.

(第2-3態樣) (2-3th aspect)

一種製程用離型薄膜,係包含以離型層2A、耐熱樹脂層2B、離型層2A’的順序層積的層積薄膜,其中,前述離型層2A及前述離型層2A’相對於水的接觸角為90°到130°:前述耐熱樹脂層2B包含含有高分子系抗靜電劑的層2B1;前述層積薄膜的在120℃的拉伸彈性率為75MPa到500MPa。 A release film for a process comprising a laminated film laminated in the order of a release layer 2A, a heat resistant resin layer 2B, and a release layer 2A', wherein the release layer 2A and the release layer 2A' are opposite to each other The contact angle of water is 90° to 130°: the heat-resistant resin layer 2B contains the layer 2B1 containing a polymer-based antistatic agent; and the tensile modulus of the laminated film at 120 ° C is 75 MPa to 500 MPa.

(第2-4態樣) (section 2-4)

一種製程用離型薄膜,係包含以離型層2A、耐熱樹 脂層2B、離型層2A’的順序層積的層積薄膜,其中,前述離型層2A及前述離型層2A’相對於水的接觸角為90°到130°;前述耐熱樹脂層2B包含含有高分子系抗靜電劑的層2B1;前述層積薄膜的在170℃的拉伸彈性率為75MPa到500MPa。 A release film for process, comprising a release layer 2A, a heat resistant tree a laminated film in which the grease layer 2B and the release layer 2A' are sequentially laminated, wherein the contact angle of the release layer 2A and the release layer 2A' with respect to water is 90 to 130; the heat resistant resin layer 2B The layer 2B1 containing a polymer-based antistatic agent is contained; and the tensile modulus at 170 ° C of the laminated film is 75 MPa to 500 MPa.

從上述各態樣可以明白,本案第2發明的製程用離型薄膜(以下,有單稱為「離型薄膜」的情形)包含:對成形品或金屬模具有離型性的離型層2A、及適其需要的離型層2A’、以及支撐該離型層的耐熱樹脂層2B的層積薄膜,而該耐熱樹脂層2B係包含含有高分子系抗靜電劑的層2B1。 As is apparent from the above-described aspects, the release film for a process according to the second aspect of the present invention (hereinafter, referred to simply as "release film") includes a release layer 2A having a release property to a molded article or a metal mold. And a laminated film of the release layer 2A' which is required and a heat-resistant resin layer 2B which supports the release layer, and the heat-resistant resin layer 2B contains the layer 2B1 containing a polymeric antistatic agent.

本案第2發明的製程用離型薄膜,在成形金屬模的內部將半導體元件等樹脂封裝時,被配置於成形金屬模的內面。此時,將離型薄膜的離型層2A(若存在離型層2A’時是離型層2A’也可以)配置在經樹脂封裝的半導體元件等(成形品)側較佳。配置本案第2發明的離型薄膜,能夠容易將經樹脂封裝的半導體元件等從金屬模離型。 In the release film for process of the second aspect of the invention, when a resin such as a semiconductor element is encapsulated inside the molding die, it is placed on the inner surface of the molding die. In this case, it is preferable to arrange the release layer 2A of the release film (or the release layer 2A' when the release layer 2A' is present) on the resin-molded semiconductor element or the like (molded article). By disposing the release film of the second invention of the present invention, it is possible to easily separate the resin-packaged semiconductor element or the like from the metal mold.

離型層2A的相對於水的接觸角為90°到130°,因為具有這樣的接觸角,離型層2A的浸潤性降低,不會固定附著於硬化的封裝樹脂或金屬模表面,容易將成形品離型。 The contact angle of the release layer 2A with respect to water is 90° to 130°, and since such a contact angle is obtained, the wettability of the release layer 2A is lowered, and it is not fixedly attached to the hardened encapsulating resin or the surface of the metal mold, and it is easy to The molded article is released.

前述離型層2A相對於水的接觸角較佳為95°到120°,更佳為98°到115°,再更佳為100°到110°。 The contact angle of the release layer 2A with respect to water is preferably from 95 to 120, more preferably from 98 to 115, still more preferably from 100 to 110.

如同前述,因為離型層2A(根據情況為離型層2A’)配置在成形品側,從成形品的外觀的觀點來看,能抑制樹脂密封工程中的離型層2A(根據情況為離型層2A’)的皺折的產生而較佳。在離型層2A(根據情況為離型層2A’)產生的皺折的話,所產生的皺折會被轉印至成形品,因此增加了發生成形品的外觀不良的可能性。 As described above, since the release layer 2A (the release layer 2A' as the case may be) is disposed on the molded article side, from the viewpoint of the appearance of the molded article, the release layer 2A in the resin sealing process can be suppressed (depending on the situation) The generation of wrinkles of the type layer 2A') is preferred. When the wrinkles are generated in the release layer 2A (the release layer 2A' as the case may be), the wrinkles generated are transferred to the molded article, which increases the possibility of occurrence of poor appearance of the molded article.

在本案第2發明中,為達成上述目的,作為構成製程用離型薄膜的層積薄膜,使用包含:離型層2A(及適其需要的離型層2A’)、以及支撐該離型層的耐熱樹脂層2B的層積薄膜,而該拉伸彈性率表現出特定值的層積薄膜,且作為耐熱樹脂層2B包含含有高分子系抗靜電劑的層2B1。也就是說,包含離型層2A(及適其需要的離型層2A’)、以及支撐該離型層的耐熱樹脂層2B的層積薄膜,其在120℃的拉伸彈性率為75MPa到500MPa,或者,其在170℃的拉伸彈性率為75MPa到500MPa。 In the second aspect of the present invention, in order to achieve the above object, a release film constituting a release film for a process is used, and a release layer 2A (and a release layer 2A' as needed) is used, and the release layer is supported. The heat-resistant resin layer 2B is a laminated film, and the tensile modulus represents a laminated film having a specific value, and the heat-resistant resin layer 2B contains the layer 2B1 containing a polymer-based antistatic agent. That is, a laminated film comprising the release layer 2A (and the release layer 2A' as needed) and the heat resistant resin layer 2B supporting the release layer has a tensile modulus at a temperature of 120 ° C of 75 MPa. 500 MPa, or its tensile modulus at 170 ° C is 75 MPa to 500 MPa.

藉由組合拉伸彈性率表現出上述特定的值的層積薄膜、及包含含有高分子系抗靜電劑的耐熱樹脂層,雖並不一定能夠明確說明能極有效地抑制成形品的外觀不良發生的機制,但推測其能發揮層積薄膜的拉伸彈性率為上述特定的值所抑制的皺折的產生、以包含含有高分子系抗靜電劑的層所抑制的靜電及所抑制的在製程的粉體等異物的吸取的相乘效果。也就是說,從粉體等異物會引起皺折這 點,藉由抑制異物的吸取,不只是能更有效地抑制皺折的產生,從皺折會成為異物的凝集點這點,藉由抑制皺折的發生,能推測更有效地抑制異物的凝集、成長這件事,與先前技術中所未能預測的高等級的成形品外觀不良的抑制之間,存在有一定的關係。 The laminated film which exhibits the above specific value by combining the tensile modulus and the heat resistant resin layer containing the polymer-based antistatic agent are not necessarily clearly described as being able to effectively suppress the occurrence of appearance defects of the molded article. However, it is presumed that the tensile modulus of the laminated film is such that wrinkles are suppressed by the above-mentioned specific values, and the static electricity suppressed by the layer containing the polymer-based antistatic agent is suppressed. The multiplication effect of the absorption of foreign matter such as powder. That is to say, foreign matter such as powder can cause wrinkles. By suppressing the absorption of foreign matter, it is possible to suppress the occurrence of wrinkles more effectively, and it is possible to suppress the agglomeration of foreign matter more effectively by suppressing the occurrence of wrinkles from the point where wrinkles become agglomerates of foreign matter. There is a certain relationship between the growth and the suppression of the appearance defects of high-grade molded articles that have not been predicted in the prior art.

此外,層積薄膜的離型層2A(及適其需要的離型層2A’)中的表面固有電阻值從半導體製造工程中的防止附著灰塵等的觀點來看,較佳為1×1013Ω/□以下,更佳為5×1012Ω/□以下,再更佳為1×1012Ω/□以下,又再更佳為5×1011Ω/□以下。 Further, the surface specific resistance value in the release layer 2A (and the release layer 2A' which is required for the film) of the laminated film is preferably 1 × 10 13 from the viewpoint of preventing adhesion of dust or the like in semiconductor manufacturing engineering. Ω/□ or less, more preferably 5 × 10 12 Ω / □ or less, still more preferably 1 × 10 12 Ω / □ or less, and even more preferably 5 × 10 11 Ω / □ or less.

層積薄膜的離型層2A(及適其需要的離型層2A’)中的表面固有電阻值,例如可以由本案實施例所記載的方法來測定。 The surface specific resistance value in the release layer 2A (and the release layer 2A' which is required) of the laminated film can be measured, for example, by the method described in the examples of the present invention.

如上述,包含離型層2A(及適其需要的離型層2A’)、以及支撐該離型層的耐熱樹脂層2B的層積薄膜,其在120℃的拉伸彈性率為75MPa到500MPa,或者,其在170℃的拉伸彈性率為75MPa到500MPa。再來,前述層積薄膜,在120℃的拉伸彈性率為75MPa到500MPa,且在170℃的拉伸彈性率為75MPa到500MPa較佳。 As described above, the laminated film including the release layer 2A (and the release layer 2A' as needed) and the heat resistant resin layer 2B supporting the release layer has a tensile modulus at a temperature of 120 ° C of 75 MPa to 500 MPa. Or, its tensile modulus at 170 ° C is 75 MPa to 500 MPa. Further, the laminated film has a tensile modulus at 75 ° C of 75 MPa to 500 MPa, and a tensile modulus at 170 ° C of preferably 75 MPa to 500 MPa.

因為上述層積薄膜的在120℃的拉伸彈性率為75MPa到500MPa,或者,在170℃的拉伸彈性率為75MPa到500MPa,能夠有效地抑制在樹脂密封工程等中的離型層的皺折產生。構成製程用離型薄膜的層積薄膜的在特定溫 度的拉伸彈性率表現出上述的特定的值,雖並不一定能夠明確說明抑制離型層的皺折發生的機制,但推測與在製程時在加熱的狀態下具有一定值以上的拉伸彈性率,在抑制皺折的產生所引起的變形的同時,因為具有一定值以下的拉伸彈性率而能分散形變有所關連。若超過500MPa的話,金屬模追隨性劣化,在端部難以填充封裝樹脂,而產生樹脂缺陷等的外觀不良發生的可能性變高。 Since the tensile modulus of the laminated film at 120 ° C is 75 MPa to 500 MPa, or the tensile modulus at 170 ° C is 75 MPa to 500 MPa, the wrinkle of the release layer in the resin sealing process or the like can be effectively suppressed. The fold is generated. The specific temperature of the laminated film constituting the release film for the process The tensile modulus of elasticity exhibits the above-described specific value, and although the mechanism for suppressing the occurrence of wrinkles of the release layer is not necessarily clearly explained, it is presumed that the film has a certain value or more in a heated state during the process. The modulus of elasticity, while suppressing the deformation caused by the generation of wrinkles, is related to the dispersion deformation due to the tensile modulus of elasticity below a certain value. When it exceeds 500 MPa, the followability of the metal mold is deteriorated, and it is difficult to fill the sealing resin at the end portion, and there is a high possibility that appearance defects such as resin defects occur.

構成本案第2發明的製程用離型薄膜的層積薄膜,其在120℃的拉伸彈性率為:80MPa到400MPa較佳,85MPa到350MPa更佳,88MPa到300MPa又更佳,90MPa到280MPa特佳。 The laminated film of the release film for process of the second invention of the present invention has a tensile modulus at 120 ° C of preferably 80 MPa to 400 MPa, more preferably 85 MPa to 350 MPa, more preferably 88 MPa to 300 MPa, and 90 MPa to 280 MPa. good.

構成本案第2發明的製程用離型薄膜的層積薄膜,其在170℃的拉伸彈性率為80MPa到400MPa較佳,85MPa到350MPa更佳,88MPa到300MPa更佳,90MPa到280MPa更佳,95MPa到200MPa又更佳,105MPa到170MPa特佳。 The laminated film of the release film for process of the second invention of the present invention preferably has a tensile modulus at 70 ° C of 80 MPa to 400 MPa, more preferably 85 MPa to 350 MPa, more preferably 88 MPa to 300 MPa, and more preferably 90 MPa to 280 MPa. 95MPa to 200MPa is more preferable, and 105MPa to 170MPa is particularly preferable.

構成本案第2發明的製程用離型薄膜的層積薄膜,其在120℃的拉伸彈性率,及在170℃的拉伸彈性率一同在上述較佳的範圍內,因為其加工時的自由度及用途較廣更 特別推薦。 The laminated film of the release film for process of the second invention of the present invention has a tensile modulus at 120 ° C and a tensile modulus at 170 ° C in the above preferred range because of the freedom of processing. Wide range of uses and uses Especially recommended.

此外,包含離型層2A(及適其需要的離型層2A’)、以及支撐該離型層的耐熱樹脂層2B的層積薄膜,其TD方向(橫方向)的從23℃到120℃為止的熱尺寸變化率為3%以下,或者,其TD方向(橫方向)的從23℃到170℃為止的熱尺寸變化率為4%以下。再來,前述層積薄膜,TD方向(橫方向)的從23℃到120℃為止的熱尺寸變化率為3%以下且TD方向(橫方向)的從23℃到170℃為止的熱尺寸變化率為4%以下較佳。 Further, the laminated film including the release layer 2A (and the release layer 2A' as needed) and the heat resistant resin layer 2B supporting the release layer has a TD direction (lateral direction) of from 23 ° C to 120 ° C. The thermal dimensional change rate is 3% or less, or the thermal dimensional change rate from 23 ° C to 170 ° C in the TD direction (lateral direction) is 4% or less. Further, in the laminated film, the thermal dimensional change rate from 23 ° C to 120 ° C in the TD direction (lateral direction) is 3% or less, and the thermal dimensional change from 23 ° C to 170 ° C in the TD direction (lateral direction) is obtained. The rate is preferably 4% or less.

因為上述層積薄膜的TD方向(橫方向)的從23℃到120℃為止的熱尺寸變化率為3%以下,或者其TD方向(橫方向)的從23℃到170℃為止的熱尺寸變化率為4%以下,較佳能夠更有效地抑制在樹脂密封工程等中的離型層的皺折產生。在該實施形態中,作為構成製程用離型薄膜的層積薄膜,藉由採用表現出橫(TD)方向的熱尺寸變化率的上述特定值者,雖並不一定能夠明確說明能更有效地抑制離型層的皺折發生的機制,但推測與藉由使用熱膨脹/收縮較小的層積薄膜,製程時的加熱/冷卻所造成的離型層2A(或離型層2A’)的熱膨脹/收縮能夠被抑制有所關連。 The thermal dimensional change rate from 23 ° C to 120 ° C in the TD direction (lateral direction) of the laminated film is 3% or less, or the thermal dimensional change from 23 ° C to 170 ° C in the TD direction (lateral direction). When the rate is 4% or less, it is preferable to more effectively suppress wrinkles of the release layer in the resin sealing process or the like. In the embodiment, the laminated film constituting the release film for the process is not necessarily clearly described as being more effective by using the specific value of the thermal dimensional change rate in the transverse (TD) direction. The mechanism for suppressing the occurrence of wrinkles of the release layer, but presumably with the thermal expansion of the release layer 2A (or the release layer 2A') caused by heating/cooling during the process by using a laminated film having a small thermal expansion/contraction. / Shrinkage can be suppressed to be related.

構成本實施形態的製程用離型薄膜的層積薄膜,其TD方向(橫方向)的從23℃到120℃為止的熱尺寸變化率在2.5%以下較佳,2.0%以下更佳,1.5%以下再更佳。另一方面,層積薄膜,其TD方向(橫方向)的從 23℃到120℃為止的熱尺寸變化率為-5.0%以上較佳。 In the laminated film of the release film for a process of the present embodiment, the thermal dimensional change ratio from 23 ° C to 120 ° C in the TD direction (lateral direction) is preferably 2.5% or less, more preferably 2.0% or less, and 1.5%. The following is even better. On the other hand, the laminated film has a TD direction (lateral direction) The thermal dimensional change rate from 23 ° C to 120 ° C is preferably -5.0% or more.

構成本實施形態的製程用離型薄膜的層積薄膜,其TD方向(橫方向)的從23℃到170℃為止的熱尺寸變化率在3.5%以下較佳,3.0%以下更佳,2.0%以下再更佳。另一方面,層積薄膜,其TD方向(橫方向)的從23℃到170℃為止的熱尺寸變化率為-5.0%以上較佳。 In the laminated film of the release film for a process of the present embodiment, the thermal dimensional change rate from 23 ° C to 170 ° C in the TD direction (lateral direction) is preferably 3.5% or less, more preferably 3.0% or less, and 2.0%. The following is even better. On the other hand, in the laminated film, the thermal dimensional change rate from 23 ° C to 170 ° C in the TD direction (lateral direction) is preferably -5.0% or more.

包含離型層2A(及適其需要的離型層2A’)、以及支撐該離型層的耐熱樹脂層2B的層積薄膜即本案第2發明的製程用離型薄膜,其TD方向(橫方向)的熱尺寸變化率與MD方向(薄膜製造時的長邊方向。以下,也稱「縱(MD)方向」)的熱尺寸變化率的和較佳為特定的值以下。 The laminated film comprising the release layer 2A (and the release layer 2A' as needed) and the heat-resistant resin layer 2B supporting the release layer, which is the release film of the process of the second invention of the present invention, has a TD direction (transverse direction) The sum of the thermal dimensional change rate in the direction and the MD direction (longitudinal direction in film production, hereinafter also referred to as "longitudinal (MD) direction) is preferably a specific value or less.

也就是說,上述層積薄膜的橫(TD)方向的從23℃到120℃為止的熱尺寸變化率,與縱(MD)方向的從23℃到120℃為止的熱尺寸變化率的和在6%以下較佳,另一方面,前述層積薄膜,其橫(TD)方向的從23℃到120℃為止的熱尺寸變化率,與縱(MD)方向的從23℃到120℃為止的熱尺寸變化率的和在-5.0%以上較佳。 That is, the sum of the thermal dimensional change rates from 23 ° C to 120 ° C in the transverse (TD) direction of the laminated film and the thermal dimensional change rate from 23 ° C to 120 ° C in the longitudinal (MD) direction are 6% or less is preferable. On the other hand, the laminate film has a thermal dimensional change ratio from 23 ° C to 120 ° C in the transverse (TD) direction and 23 ° C to 120 ° C in the vertical (MD) direction. The sum of the thermal dimensional change rates is preferably -5.0% or more.

因為包含離型層2A(及適其需要的離型層2A’)、以及耐熱樹脂層2B的層積薄膜的橫(TD)方向的從23℃到120℃為止的熱尺寸變化率,與縱(MD)方向的從23℃到120℃為止的熱尺寸變化率的和在6%以下,能夠更有效地抑制在裝設至金屬模內面時的皺折產生。 The rate of change in thermal dimensionality from 23 ° C to 120 ° C in the transverse (TD) direction of the laminated film including the release layer 2A (and the release layer 2A' as needed) and the heat-resistant resin layer 2B, and the longitudinal The sum of the thermal dimensional change rates from 23 ° C to 120 ° C in the (MD) direction is 6% or less, and wrinkles generated when mounted on the inner surface of the metal mold can be more effectively suppressed.

此外,包含離型層2A(及適其需要的離型層 2A’)、以及耐熱樹脂層2B的層積薄膜的橫(TD)方向的從23℃到170℃為止的熱尺寸變化率,與縱(MD)方向的從23℃到170℃為止的熱尺寸變化率的和在7%以下較佳,另一方面,前述層積薄膜,其橫(TD)方向的從23℃到170℃為止的熱尺寸變化率,與縱(MD)方向的從23℃到170℃為止的熱尺寸變化率的和在-5.0%以上較佳。 In addition, the release layer 2A is included (and the release layer is suitable for it) 2A') and the thermal dimensional change rate from 23 ° C to 170 ° C in the transverse (TD) direction of the laminated film of the heat resistant resin layer 2B, and the thermal size from 23 ° C to 170 ° C in the longitudinal (MD) direction The sum of the rate of change is preferably 7% or less. On the other hand, the laminated film has a thermal dimensional change ratio from 23 ° C to 170 ° C in the transverse (TD) direction and 23 ° C in the longitudinal (MD) direction. The sum of the thermal dimensional change rates up to 170 ° C is preferably -5.0% or more.

因為上述層積薄膜的橫(TD)方向的從23℃到170℃為止的熱尺寸變化率,與縱(MD)方向的從23℃到170℃為止的熱尺寸變化率的和在7%以下,能夠更有效地抑制在裝設至金屬模內面時的皺折產生。 The thermal dimensional change rate from 23 ° C to 170 ° C in the transverse (TD) direction of the laminated film is less than 7% from the thermal dimensional change rate from 23 ° C to 170 ° C in the longitudinal (MD) direction. It is possible to more effectively suppress wrinkles generated when mounted on the inner surface of the metal mold.

離型層2A Release layer 2A

構成本案第2發明的製程用離型薄膜的離型層2A,相對於水的接觸角為90°到130°,較佳為95°到120°,更佳為98°到115°,再更佳為100°到110°。因為成形品的優離型性,及入手的容易性,包含從:氟樹脂、4-甲基-1-戊烯(共)聚合物、及聚苯乙烯系樹脂所構成的群中選出的樹脂較佳。 The release layer 2A constituting the release film for process of the second invention of the present invention has a contact angle with respect to water of 90 to 130, preferably 95 to 120, more preferably 98 to 115, and still more Good for 100° to 110°. The resin selected from the group consisting of fluororesin, 4-methyl-1-pentene (co)polymer, and polystyrene resin, because of its excellent release property and ease of handling. Preferably.

能用於離型層2A的氟樹脂,與有關離型層1A所說明的一樣。 The fluororesin which can be used for the release layer 2A is the same as that described for the release layer 1A.

此外,能用於離型層2A的4-甲基-1-戊烯(共)聚合物,與有關離型層1A所說明的一樣。 Further, the 4-methyl-1-pentene (co)polymer which can be used for the release layer 2A is the same as that described for the release layer 1A.

再來,能用於離型層2A的聚苯乙烯系樹脂,與有關 離型層1A所說明的一樣。 In addition, the polystyrene resin which can be used for the release layer 2A is related to The same as that described for the release layer 1A.

離型層2A較佳為具有能耐成形時的金屬模的溫度(典型為120~180℃)的耐熱性。從相關的觀點來看,作為離型層2A較佳為包含有結晶成份的結晶性樹脂,該結晶性樹脂的熔點較佳為190℃以上,更佳為200℃以上300℃以下。 The release layer 2A preferably has heat resistance capable of withstanding the temperature of the mold at the time of molding (typically 120 to 180 ° C). From the related viewpoint, the release layer 2A is preferably a crystalline resin containing a crystalline component, and the crystalline resin preferably has a melting point of 190 ° C or higher, more preferably 200 ° C or higher and 300 ° C or lower.

因為在離型層2A帶有結晶性,例如在氟樹脂較佳為至少包含由四氟乙烯導出的構成單位,在4-甲基-1-戊烯(共)聚合物較佳為至少包含由4-甲基-1-戊烯導出的構成單位,在聚苯乙烯系樹脂較佳為至少含有間規聚苯乙烯。因為在構成離型層2A的樹脂裡含有結晶成份,在樹脂密封工程等中不易產生皺折,適合抑制因皺折轉印成形品所產生的外觀不良。 Since the release layer 2A has crystallinity, for example, the fluororesin preferably contains at least a constituent unit derived from tetrafluoroethylene, the 4-methyl-1-pentene (co)polymer preferably contains at least The constituent unit derived from 4-methyl-1-pentene preferably contains at least a syndiotactic polystyrene in the polystyrene resin. Since the crystal component is contained in the resin constituting the release layer 2A, wrinkles are less likely to occur in the resin sealing process or the like, and it is suitable to suppress the appearance defect caused by the wrinkle transfer molded article.

包含構成離型層2A的上述結晶性成份的樹脂層,在以JISK7221為準並藉由示差掃描熱量測定(DSC)所測定的第1次昇溫工程中的結晶熔解熱量為15J/g以上且60J/g以下較佳,20J/g以上且50J/g以下更佳。若是15J/g以上的話,除了能更有效果地發現得到對樹脂密封工程等的熱壓印成形的耐熱性及離型性以外,也能抑制尺寸變化率,故也能防止皺折的產生。另一方面,若前述結晶熔解熱量為60J/g以下的話,因離型層2A為適切的硬度,在樹脂密封工程等能向薄膜的金屬模得到充分的追隨性,沒有薄膜破損的風險。 The resin layer containing the above-described crystalline component constituting the release layer 2A has a crystal heat of fusion of 15 J/g or more and 60 J in the first temperature rising process measured by differential scanning calorimetry (DSC) based on JIS K7221. It is preferably /g or less, more preferably 20 J/g or more and 50 J/g or less. When it is 15 J/g or more, it is found that the heat resistance and the release property of the hot stamping such as the resin sealing process can be more effectively obtained, and the dimensional change rate can be suppressed, so that the occurrence of wrinkles can be prevented. On the other hand, when the heat of crystal melting is 60 J/g or less, the release layer 2A has a suitable hardness, and sufficient followability to the mold of the film can be obtained in a resin sealing process or the like, and there is no risk of film breakage.

離型層2A除了氟樹脂、4-甲基-1-戊烯(共) 聚合物、及/或聚苯乙烯系樹脂以外,也可以再包含其他樹脂。其他情況的樹脂及其含有量,與有關離型層1A所說明的一樣。 Release layer 2A except fluororesin, 4-methyl-1-pentene (total) In addition to the polymer and/or polystyrene resin, other resins may be further included. The resin and its content in other cases are the same as those described for the release layer 1A.

此外離型層2A除了氟樹脂、4-甲基-1-戊烯(共)聚合物、及/或聚苯乙烯系樹脂以外,在不損及本案第2發明的目的範圍內,可以在薄膜用樹脂中配合耐熱安定劑、耐候安定劑、發鏽防止劑、耐銅害安定劑、抗靜電劑等一般習知的添加劑。該等添加劑的含有量相對於氟樹脂、4-甲基-1-戊烯共聚物、及/或聚苯乙烯系樹脂100重量份,例如可以是0.0001~10重量份。 Further, in addition to the fluororesin, the 4-methyl-1-pentene (co)polymer, and/or the polystyrene resin, the release layer 2A may be in the film without impairing the object of the second invention of the present invention. A conventionally known additive such as a heat stabilizer, a weathering stabilizer, a rust preventive agent, a copper-resistant stabilizer, or an antistatic agent is blended in the resin. The content of the additives may be, for example, 0.0001 to 10 parts by weight based on 100 parts by weight of the fluororesin, the 4-methyl-1-pentene copolymer, and/or the polystyrene resin.

離型層2A的厚度若相對成形品具有充分的離型性的話,並沒有特別的限制,通常是1~50μm,較佳為5~30μm。 The thickness of the release layer 2A is not particularly limited as long as it has sufficient release property from the molded article, and is usually 1 to 50 μm, preferably 5 to 30 μm.

離型層2A的表面可以因應必要而具有凹凸形狀,藉此,能提升離型性。在離型層2A的表面賦予凹凸的方法並無特別限制,但可以採用壓印加工等一般的方法。 The surface of the release layer 2A may have a concavo-convex shape as necessary, whereby the release property can be improved. The method of providing the unevenness on the surface of the release layer 2A is not particularly limited, but a general method such as imprinting can be employed.

離型層2A’ Release layer 2A'

本案第2發明的製程用離型薄膜除了離型層2A及耐熱樹脂層2B以外,可以更具有離型層2A’。也就是說,本案第2發明的製程用離型薄膜,可以是包含以離型層2A、耐熱樹脂層2B、離型層2A’的順序層積的層積薄膜。 The release film for process of the second invention of the present invention may further have a release layer 2A' in addition to the release layer 2A and the heat resistant resin layer 2B. In other words, the release film for process of the second invention of the present invention may be a laminated film comprising a release layer 2A, a heat resistant resin layer 2B, and a release layer 2A'.

構成本案第2發明的製程用離型薄膜也可以的離型層2A’,相對於水的接觸角為90°到130°,較佳為95°到120°,更佳為98°到115°,再更佳為100°到110°。因此,有關離型層2A’的較佳材質、構成、物性等,與上述中離型層2A的說明一樣。 The release film 2A' constituting the process release film of the second invention of the present invention may have a contact angle with respect to water of from 90 to 130, preferably from 95 to 120, more preferably from 98 to 115. More preferably, it is 100° to 110°. Therefore, the preferred material, constitution, physical properties and the like of the release layer 2A' are the same as those of the above-mentioned release layer 2A.

製程用離型薄膜,可以是與包含以離型層2A、耐熱樹脂層2B、離型層2A’的順序層積的層積薄膜時的離型層2A與離型層2A’為同一構成的層,也可以是不同構成的層。 The release film for the process may be the same as the release layer 2A and the release layer 2A' when a laminated film including the release layer 2A, the heat resistant resin layer 2B, and the release layer 2A' is laminated. Layers can also be layers of different compositions.

從彎曲的防止、或在任何面都有同樣的離型性因而造成的處理容易性等的觀點來看,離型層2A與離型層2A’為同一或大致同一的構成較佳,從與使用離型層2A與離型層2A’的製程之間的關係,分別作最適地設計的觀點來看,例如,從使離型層2A從金屬模的離型性佳,使離型層2A’從成形物的剝離性佳等的觀點來看,使離型層2A與離型層2A’為不同的構成較佳。 From the viewpoint of prevention of bending, ease of handling due to the same release property on any surface, and the like, the release layer 2A and the release layer 2A' are preferably the same or substantially the same, and are preferably From the viewpoint of optimally designing the relationship between the process of the release layer 2A and the release layer 2A', for example, from the release property of the release layer 2A from the metal mold, the release layer 2A is made. The configuration in which the release layer 2A and the release layer 2A' are different from each other is preferable from the viewpoint of good peelability of the molded article.

使離型層2A與離型層2A’為不同的構成時,可以使離型層2A與離型層2A’為同一材料但使厚度等的構成不同,也可以使材料和其他以外的構成都不同。 When the release layer 2A and the release layer 2A' are different from each other, the release layer 2A and the release layer 2A' may be made of the same material, but the thickness or the like may be different, and the material and other components may be used. different.

耐熱樹脂層2B Heat resistant resin layer 2B

構成本案第2發明的製程用離型薄膜的耐熱樹脂層2B支撐離型層2A(及根據情況為離型層2A’),且具有抑制因金屬模溫度等所造成的皺折產生的機能。 The heat-resistant resin layer 2B constituting the release film for process of the second aspect of the present invention supports the release layer 2A (and, as the case may be, the release layer 2A'), and has a function of suppressing wrinkles caused by the mold temperature or the like.

構成本案第2發明的製程用離型薄膜的耐熱樹脂層2B包含含有高分子系抗靜電劑的層2B1。在這裡,在「包含」含有高分子系抗靜電劑的層2B1中所謂的「包含」指的是:包含耐熱樹脂層2B的全體由含有高分子系抗靜電劑的層2B1所構成的情形、及耐熱樹脂層2B的一部分由含有高分子系抗靜電劑的層2B1所構成的情形這兩者的意義。因此,耐熱樹脂層2B也可以包含除了含有高分子系抗靜電劑的層2B1以外的其他層,不包含也可以。 The heat-resistant resin layer 2B constituting the release film for process of the second invention of the present invention includes the layer 2B1 containing a polymer-based antistatic agent. Here, the term "including" in the layer 2B1 containing the polymer-based antistatic agent means that the entire heat-resistant resin layer 2B is composed of the layer 2B1 containing the polymer-based antistatic agent, The meaning of both of the heat resistant resin layer 2B is composed of the layer 2B1 containing a polymer antistatic agent. Therefore, the heat resistant resin layer 2B may contain a layer other than the layer 2B1 containing the polymer antistatic agent, and may not be included.

構成本案第2發明的製程用離型薄膜的耐熱樹脂層2B藉由包含含有高分子系抗靜電劑的層2B1,表面固有電阻值低,有助於防止帶電。 The heat-resistant resin layer 2B constituting the release film for a process of the second aspect of the present invention contains a layer 2B1 containing a polymer-based antistatic agent, and has a low surface specific resistance value, which contributes to prevention of charging.

耐熱樹脂層2B的表面固有電阻值從防止向本案第2發明的層積薄膜的離型層2A的塵等的附著的觀點來看,1010Ω/□以下較佳,109Ω/□以下特佳。前述表面固有電阻值為1010Ω/□以下的話,在本發明的製程用離型薄膜的表面也能有效地發現抗靜電性。因此,在能夠有效地控制因靜電所造成的粉塵等的異物的附著的同時,例如在半導體封裝體的製造時,即便在半導體元件的一部分直接接觸製程用離型薄膜時,也能有效地抑制製程用離型薄膜的帶電-放帶所造成的半導體元件的破壞。 The surface specific resistance of the heat-resistant resin layer 2B is preferably 10 10 Ω/□ or less and 10 9 Ω/□ or less from the viewpoint of preventing adhesion to dust or the like of the release layer 2A of the laminated film of the second invention of the present invention. Very good. When the surface specific resistance value is 10 10 Ω/□ or less, the antistatic property can be effectively found on the surface of the release film for process of the present invention. Therefore, it is possible to effectively control the adhesion of foreign matter such as dust due to static electricity, for example, in the manufacture of a semiconductor package, even when a part of the semiconductor element is directly in contact with the release film for process, it can be effectively suppressed. The destruction of the semiconductor element caused by the charging-releasing of the release film of the process.

耐熱樹脂層2B的表面固有電阻值從防止向本案第2發明的層積薄膜的離型層2A的塵等的附著的觀點來看,越低越好,並沒有特別限定下限。耐熱樹脂層2B的表面電阻值在當高分子系抗靜電劑的導電性能越高、或者高分 子系抗靜電劑的含有量越多時,會有變小的傾向。 The surface specific resistance value of the heat-resistant resin layer 2B is preferably as low as possible from the viewpoint of preventing adhesion to dust or the like of the release layer 2A of the laminated film of the second invention of the present invention, and the lower limit is not particularly limited. The surface resistance value of the heat resistant resin layer 2B is higher when the conductive property of the polymer antistatic agent is higher, or a higher score The larger the content of the sub-system antistatic agent, the smaller the tendency is.

耐熱樹脂層2B的表面固有電阻值,例如可以由本案實施例所記載的方法來測定。但是,將層積前的耐熱樹脂層2B作為試料使用。 The surface specific resistance value of the heat resistant resin layer 2B can be measured, for example, by the method described in the examples of the present invention. However, the heat resistant resin layer 2B before lamination was used as a sample.

作為含有高分子系抗靜電劑的層2B1以外的其他的層,例如較佳為使用含有黏接劑的黏接層2B2。也就是說,耐熱樹脂層2B可以包含:含有高分子系抗靜電劑的層2B1、包含黏接劑的黏接層2B2。 As the layer other than the layer 2B1 containing the polymer antistatic agent, for example, an adhesive layer 2B2 containing an adhesive is preferably used. In other words, the heat resistant resin layer 2B may include a layer 2B1 containing a polymer antistatic agent and an adhesive layer 2B2 containing a binder.

在這種情況,耐熱樹脂層2B可以由含有高分子系抗靜電劑的層2B1、及僅包含黏接劑的黏接層2B2所構成,也可以更包含:含有高分子系抗靜電劑的層2B1、及包含黏接劑的黏接層2B2以外的其他層,例如包含:不包含抗靜電劑及黏接劑的熱塑性樹脂的層、氣體遮蔽層等也可以。 In this case, the heat resistant resin layer 2B may be composed of a layer 2B1 containing a polymer-based antistatic agent and an adhesive layer 2B2 containing only a binder, and may further include a layer containing a polymer-based antistatic agent. 2B1 and other layers other than the adhesive layer 2B2 containing an adhesive agent may include, for example, a layer of a thermoplastic resin not containing an antistatic agent and an adhesive, a gas shielding layer, or the like.

此外,含有高分子系抗靜電劑的層2B1也可以含有黏接劑。也就是說,耐熱樹脂層2B可以包含含有高分子系抗靜電劑及黏接劑的層2B3。 Further, the layer 2B1 containing a polymer antistatic agent may contain an adhesive. That is, the heat resistant resin layer 2B may include the layer 2B3 containing a polymer-based antistatic agent and an adhesive.

在這種情況,耐熱樹脂層2B可以僅由含有高分子系抗靜電劑及黏接劑的層2B3所構成,也可以在除了含有高分子系抗靜電劑及黏接劑的層2B3以外的其他層,例如更包含:含有高分子系抗靜電劑的層2B1、包含黏接劑的黏接層2B2、未包含抗靜電劑及黏接劑的熱塑性樹脂的層、氣體遮蔽層等也可以。 In this case, the heat resistant resin layer 2B may be composed only of the layer 2B3 containing the polymer antistatic agent and the binder, or may be other than the layer 2B3 containing the polymer antistatic agent and the binder. The layer may further include a layer 2B1 containing a polymer antistatic agent, an adhesive layer 2B containing an adhesive, a layer of a thermoplastic resin not containing an antistatic agent and an adhesive, a gas shielding layer, and the like.

本案第2發明的製程用離型薄膜中,耐熱樹 脂層2B的橫(TD)方向的從23℃到120℃為止的熱尺寸變化率為3%以下,或者耐熱樹脂層2B的橫(TD)方向的從23℃到170℃為止的熱尺寸變化率為3%以下較佳。 再來,耐熱樹脂層2B,其橫(TD)方向的從23℃到120℃為止的熱尺寸變化率為3%以下且橫(TD)方向的從23℃到170℃為止的熱尺寸變化率為3%以下更佳。 In the release film for process of the second invention of the present invention, the heat-resistant tree The thermal dimensional change rate from 23 ° C to 120 ° C in the transverse (TD) direction of the lipid layer 2B is 3% or less, or the thermal dimensional change from 23 ° C to 170 ° C in the transverse (TD) direction of the heat resistant resin layer 2B. The rate is preferably 3% or less. In addition, the heat-resistant resin layer 2B has a thermal dimensional change rate from 23 ° C to 120 ° C in the transverse (TD) direction of 3% or less and a thermal dimensional change rate from 23 ° C to 170 ° C in the transverse (TD) direction. More preferably 3% or less.

耐熱樹脂層2B的橫(TD)方向的從23℃到120℃為止的熱尺寸變化率為3%以下,或者耐熱樹脂層2B的橫(TD)方向的從23℃到170℃為止的熱尺寸變化率為3%以下,能更有效地抑制裝設於金屬模內面時的皺折產生。 The thermal dimensional change rate from 23 ° C to 120 ° C in the transverse (TD) direction of the heat resistant resin layer 2B is 3% or less, or the thermal size from 23 ° C to 170 ° C in the transverse (TD) direction of the heat resistant resin layer 2B. The rate of change is 3% or less, and wrinkles generated when mounted on the inner surface of the metal mold can be more effectively suppressed.

作為耐熱樹脂層2B,藉由採用表現出橫(TD)方向的熱尺寸變化率的上述特定值者,雖並不一定能夠明確說明更有效地抑制離型層的皺折發生的機制,但推測與藉由使用熱膨脹/收縮較小的耐熱樹脂層2B,製程時的加熱/冷卻所造成的離型層2A(或離型層2A’)的熱膨脹/收縮能夠被抑制有所關連。 As the heat-resistant resin layer 2B, by using the above-described specific value indicating the rate of change in the thermal dimension in the transverse (TD) direction, it is not always possible to clearly explain the mechanism for suppressing the occurrence of wrinkles of the release layer more effectively, but it is presumed that The thermal expansion/contraction of the release layer 2A (or the release layer 2A') caused by the heating/cooling during the process can be suppressed by using the heat-resistant resin layer 2B having a small thermal expansion/contraction.

在耐熱樹脂層2B可以使用包含無延伸薄膜的任意樹脂層,但含有延伸薄膜特佳。 Any resin layer containing an unstretched film may be used in the heat resistant resin layer 2B, but it is particularly preferable to contain an extended film.

延伸薄膜因為在製造的過程中的延伸的影響,熱膨脹率會有變低或者成為負數的傾向,因為實現橫(TD)方向的從23℃到120℃為止的熱尺寸變化率為3%以下,或者耐熱樹脂層2B的橫(TD)方向的從23℃到170℃為止的熱尺寸變化率為3%以下這種特性這為容易,因此能適合作為耐熱樹脂層2B使用。 The elongation film has a tendency to become low or become a negative number due to the influence of the elongation during the production process, because the thermal dimensional change rate from 23 ° C to 120 ° C in the transverse (TD) direction is 3% or less. In addition, it is easy to change the thermal dimensional change rate from 23 ° C to 170 ° C in the transverse (TD) direction of the heat resistant resin layer 2B, and therefore it is suitable for use as the heat resistant resin layer 2B.

耐熱樹脂層2B的橫(TD)方向的從23℃到120℃為止的熱尺寸變化率在2%以下較佳,1.5%以下更佳,1%以下再更佳,另一方面,-10%以上較佳。 The thermal dimensional change ratio of the heat-resistant resin layer 2B in the transverse (TD) direction from 23 ° C to 120 ° C is preferably 2% or less, more preferably 1.5% or less, still more preferably 1% or less, and on the other hand, -10%. The above is preferred.

耐熱樹脂層2B的橫(TD)方向的從23℃到170℃為止的熱尺寸變化率在2%以下較佳,1.5%以下更佳,1%以下再更佳,另一方面,-10%以上較佳。 The thermal dimensional change rate from 23 ° C to 170 ° C in the transverse (TD) direction of the heat resistant resin layer 2B is preferably 2% or less, more preferably 1.5% or less, still more preferably 1% or less, and on the other hand, -10%. The above is preferred.

本案第2發明的製程用離型薄膜中,耐熱樹脂層2B的橫(TD)方向的從23℃到120℃為止的熱尺寸變化率,與縱(MD)方向的從23℃到120℃為止的熱尺寸變化率的和在6%以下,或耐熱樹脂層2B的橫(TD)方向的從23℃到170℃為止的熱尺寸變化率,與縱(MD)方向的從23℃到170℃為止的熱尺寸變化率的和在5%以下較佳。耐熱樹脂層2B的橫(TD)方向的從23℃到120℃為止的熱尺寸變化率,與縱(MD)方向的從23℃到120℃為止的熱尺寸變化率的和在6%以下較佳,而且,耐熱樹脂層2B的橫(TD)方向的從23℃到170℃為止的熱尺寸變化率,與縱(MD)方向的從23℃到170℃為止的熱尺寸變化率的和在5%以下更佳。因為耐熱樹脂層2B的橫(TD)方向的熱尺寸變化率,與縱(MD)方向的熱尺寸變化率的和在上述範圍內,能夠更有效地抑制在裝設至金屬模內面時的皺折產生。 In the release film for process of the second aspect of the invention, the thermal dimensional change rate from 23 ° C to 120 ° C in the transverse (TD) direction of the heat resistant resin layer 2B is from 23 ° C to 120 ° C in the longitudinal (MD) direction. The thermal dimensional change rate is 6% or less, or the thermal dimensional change rate from 23 ° C to 170 ° C in the transverse (TD) direction of the heat resistant resin layer 2B, and from 23 ° C to 170 ° C in the longitudinal (MD) direction. The sum of the thermal dimensional change rates up to 5% is preferable. The thermal dimensional change ratio from 23 ° C to 120 ° C in the transverse (TD) direction of the heat resistant resin layer 2B is 6% or less from the thermal dimensional change ratio from 23 ° C to 120 ° C in the longitudinal (MD) direction. In addition, the thermal dimensional change rate from 23 ° C to 170 ° C in the transverse (TD) direction of the heat resistant resin layer 2B and the thermal dimensional change rate from 23 ° C to 170 ° C in the longitudinal (MD) direction are More than 5% is better. Since the thermal dimensional change rate in the transverse (TD) direction of the heat resistant resin layer 2B and the thermal dimensional change rate in the longitudinal (MD) direction are within the above range, it is possible to more effectively suppress the mounting to the inner surface of the metal mold. Wrinkles are produced.

耐熱樹脂層2B的橫(TD)方向的從23℃到120℃為止的熱尺寸變化率,與縱(MD)方向的從23℃到120℃為止的熱尺寸變化率的和為-3.0%以上5.0%以下較佳, -2.0%以上4.5%以下更佳。 The thermal dimensional change ratio of the heat-resistant resin layer 2B from 23 ° C to 120 ° C in the transverse (TD) direction is -3.0% or more from the thermal dimensional change rate from 23 ° C to 120 ° C in the longitudinal (MD) direction. 5.0% or less is better, - 2.0% or more and 4.5% or less is more preferable.

耐熱樹脂層2B的橫(TD)方向的從23℃到170℃為止的熱尺寸變化率,與縱(MD)方向的從23℃到170℃為止的熱尺寸變化率的和為-15.5%以上5.0%以下較佳,-10.0%以上4.5%以下更佳。 The thermal dimensional change ratio from 23 ° C to 170 ° C in the transverse (TD) direction of the heat resistant resin layer 2B is -15.5% or more in comparison with the thermal dimensional change ratio from 23 ° C to 170 ° C in the longitudinal (MD) direction. It is preferably 5.0% or less, more preferably -10.0% or more and 4.5% or less.

從使耐熱樹脂層2B的橫(TD)方向的熱尺寸變化率與縱(MD)方向的熱尺寸變化率的和在上述範圍內的觀點來看,對使用延伸薄膜是有利的,且對於適切地控制延伸條件是更有利的。 From the viewpoint of making the sum of the thermal dimensional change rate in the transverse (TD) direction of the heat resistant resin layer 2B and the thermal dimensional change rate in the longitudinal (MD) direction within the above range, it is advantageous to use the stretched film, and it is suitable for the use of the stretched film. It is more advantageous to control the extension conditions.

上述延伸薄膜的詳細,與有關耐熱樹脂層1B所說明的一樣。 The details of the above-mentioned stretched film are the same as those described for the heat resistant resin layer 1B.

耐熱樹脂層2B在從薄膜的強度、或將其熱尺寸變化率控制在適切的範圍的觀點來看,具有能耐成形時的金屬模溫度(典型為120~180℃)的耐熱性較佳。從相關的觀點來看,耐熱樹脂層2B包含具有結晶成份的結晶性樹脂較佳,該結晶性樹脂的熔點較佳為125℃以上,溶點更佳為155℃以上300℃以下,再更佳為185以上210℃以下,特佳為185以上205℃以下。 The heat resistant resin layer 2B has heat resistance which is resistant to the mold temperature at the time of molding (typically 120 to 180 ° C) from the viewpoint of controlling the strength of the film or controlling the rate of change in the thermal dimensionality. From the related viewpoint, the heat resistant resin layer 2B preferably contains a crystalline resin having a crystalline component, and the crystalline resin preferably has a melting point of 125 ° C or more, and a melting point of more preferably 155 ° C or more and 300 ° C or less. It is 185 or more and 210 ° C or less, and particularly preferably 185 or more and 205 ° C or less.

如同上述,耐熱樹脂層2B較佳為包含具有結晶成份的結晶性樹脂。作為在耐熱樹脂層2B所含有的結晶性樹脂,例如可以使用一部或全部聚酯樹脂、聚醯胺樹脂、聚丙烯樹脂等的結晶性樹脂。具體來說在聚酯纖維樹脂中使用聚對苯二甲酸或聚丁烯對苯二甲酸酯,在聚醯胺樹脂中使用聚醯胺6或聚醯胺66,在聚丙烯樹脂中使用 等規聚丙烯較佳。 As described above, the heat resistant resin layer 2B preferably contains a crystalline resin having a crystalline component. As the crystalline resin contained in the heat resistant resin layer 2B, for example, a crystalline resin such as one or all of a polyester resin, a polyamide resin, or a polypropylene resin can be used. Specifically, polyterephthalic acid or polybutylene terephthalate is used in the polyester fiber resin, and polyamine 6 or polyamide 66 is used in the polyamide resin, and is used in the polypropylene resin. Isotactic polypropylene is preferred.

因為使耐熱樹脂層2B包含前述結晶性樹脂的結晶成份,在樹脂密封工程等中不易產生皺折,對於抑制因皺折轉印成形品所產生的外觀不良更有利。 When the heat resistant resin layer 2B contains the crystal component of the crystalline resin described above, wrinkles are less likely to occur in the resin sealing process or the like, and it is more advantageous to suppress the appearance defect caused by the wrinkle transfer molded article.

構成耐熱樹脂層2B的樹脂,在以JISK7221為準並藉由示差掃描熱量測定(DSC)所測定的第1次昇溫工程中的結晶熔解熱量為20J/g以上且100J/g以下較佳,25J/g以上且65J/g以下更佳,25J/g以上且55J/g以下又更佳,28J/g以上且50J/g以下再更佳,28J/g以上且40J/g以下又再更佳,28J/g以上且35J/g以下又再更佳。若是20J/g以上的話,能更有效果地發現在樹脂密封工程等的熱壓印成形的耐熱性及離型性,此外也能僅少抑制尺寸變化率,故也能防止皺折的產生。另一方面,若前述結晶熔解熱量為100J/g以下的話,因能夠對耐熱樹脂層2B賦予適切的硬度,在樹脂密封工程等能向薄膜的金屬模確保充分的追隨性,而且沒有薄膜破損的風險。此外,在本實施形態中,所謂的結晶熔解熱量為在以JISK7221為準並藉由示差掃描熱量測定(DSC)所測定的第1次昇溫工程中,在表示所得到的縱軸的熱量(J/g)與橫軸的溫度(℃)之間的關係的圖表中,從在120℃以上具有峰值的峰值面積之和所求得的數值。 The resin constituting the heat-resistant resin layer 2B is preferably 20 J/g or more and 100 J/g or less in the first heat-rise project measured by differential scanning calorimetry (DSC) based on JIS K7221, and 25 J is preferably 25 J. /g or more and 65J/g or less is more preferable, 25J/g or more and 55J/g or less are more preferable, 28J/g or more and 50J/g or less are more preferable, and 28J/g or more and 40J/g or less are even better. More than 28J/g and 35J/g or less. When it is 20 J/g or more, the heat resistance and the release property of the hot stamping molding such as the resin sealing process can be more effectively found, and the dimensional change rate can be suppressed only, so that the occurrence of wrinkles can be prevented. On the other hand, when the heat of the crystal melting heat is 100 J/g or less, it is possible to impart appropriate hardness to the heat-resistant resin layer 2B, and it is possible to ensure sufficient followability to the mold of the film, such as a resin sealing process, and there is no film breakage. risk. Further, in the present embodiment, the heat of crystal melting is a heat amount indicating the obtained vertical axis in the first temperature rising process measured by differential scanning calorimetry (DSC) based on JIS K7221 (J). /g) A numerical value obtained from the sum of the peak areas having peaks at 120 ° C or higher in the graph of the relationship with the temperature of the horizontal axis (° C.).

耐熱樹脂層2B的結晶熔解熱量可以因應薄膜製造時的加熱、冷卻的條件、或延伸條件作適宜設定來調節。 The heat of crystal melting of the heat resistant resin layer 2B can be adjusted in accordance with heating, cooling conditions, or elongation conditions at the time of film production.

耐熱樹脂層2B的厚度若能確保薄膜強度的 話,沒有特別的限制,但通常為1~100μm,較佳為5~50μm。 If the thickness of the heat resistant resin layer 2B can ensure the strength of the film There is no particular limitation, but it is usually from 1 to 100 μm, preferably from 5 to 50 μm.

含有高分子系抗靜電劑的層2B1 Layer 2B1 containing a polymeric antistatic agent

在構成本案第2發明的層積體的耐熱樹脂層2B中,作為適合使用的含有高分子系抗靜電劑的層2B1中的高分子系抗靜電劑,可以使用具有抗靜電機能的高分子化合物。例如,可以是在側基具有季銨鹼的陽離子系共聚物、含有聚苯乙烯磺酸的負離子系化合物、具有聚環氧烷鏈的化合物(聚環氧乙烷鏈、聚環氧丙烷鏈較佳。)、聚乙二醇甲基丙烯酸酯共聚物、聚醚酯醯胺、聚醚醯胺醯亞胺,聚醚酯,環氧乙烷-環氧氯丙烷共聚物等非離子系高分子、π共軛系導電性高分子等。其等可以單獨使用1種也可以併用2種以上。 In the heat-resistant resin layer 2B constituting the laminate of the second invention of the present invention, a polymer compound having an antistatic function can be used as the polymer-based antistatic agent in the layer 2B1 containing a polymer-based antistatic agent which is suitably used. . For example, it may be a cationic copolymer having a quaternary ammonium base in a pendant group, an anionic compound containing a polystyrenesulfonic acid, or a compound having a polyalkylene oxide chain (polyethylene oxide chain, polypropylene oxide chain) Good.), polyethylene glycol methacrylate copolymer, polyether ester decylamine, polyether amidoxime, polyether ester, ethylene oxide-epichlorohydrin copolymer and other nonionic polymers Π-conjugated conductive polymer. These may be used alone or in combination of two or more.

在側基具有季銨鹽基共聚物中的季銨鹽基,具有附加介電極化性及導電性所造成的快速介電極化緩和性的效果。 The side group has a quaternary ammonium salt group in the quaternary ammonium salt-based copolymer, and has an effect of rapid dielectric polarization relaxation caused by additional dielectric polarization and electrical conductivity.

前述共聚物在側基具有季銨鹽基的同時,也具有羧基較佳。具有羧基的話,前述共聚物有交聯性,單獨也能形成層2B1。此外,在與聚氨酯系黏接劑等的黏接劑併用時,與該黏接劑反應而形成交聯構造,黏接性、耐久性、其他力學特性能有顯著地提升。 The above copolymer preferably has a carboxyl group while having a quaternary ammonium salt group in its side group. When the carboxyl group is present, the copolymer is crosslinkable, and the layer 2B1 can be formed alone. Further, when used in combination with a binder such as a urethane-based adhesive, the adhesive reacts with the adhesive to form a crosslinked structure, and the adhesion, durability, and other mechanical properties are remarkably improved.

前述共聚物更可以在側基具有羥基。羥基為黏接劑中的官能基,例如在與異氰酸酯基反應後具有提高黏接性的 效果。 The aforementioned copolymer may further have a hydroxyl group at a pendant group. The hydroxyl group is a functional group in the binder, for example, has an improved adhesion after reacting with an isocyanate group. effect.

前述共聚物可以藉由將上述各官能基單體共聚合而得到。作為具有季銨鹽基的單體的具體例,可以是:二氨基乙酯季銨化物(包含作為對離子的氯化物、硫酸鹽、磺酸鹽、烷基磺酸鹽等的負離子)。作為具有羧基的單體的具體例,可以是:(甲基)丙烯酸、(甲基)丙烯醯氧乙基琥珀酸、鄰苯二甲酸,六氫鄰苯二甲酸等。 The above copolymer can be obtained by copolymerizing each of the above functional group monomers. Specific examples of the monomer having a quaternary ammonium salt group may be a diaminoethyl ester quaternary ammonium compound (containing a negative ion such as a chloride, a sulfate, a sulfonate or an alkylsulfonate as a counter ion). Specific examples of the monomer having a carboxyl group may be (meth)acrylic acid, (meth)acryloyloxyethyl succinic acid, phthalic acid, hexahydrophthalic acid or the like.

也可以是使其等以外的其他單體共聚合。作為其他的單體,可以是:烷基(甲基)丙烯酸、苯乙烯、醋酸乙烯基、乙烯基鹵化物、烯烴等的乙烯基介電體等。 It is also possible to copolymerize other monomers other than the above. The other monomer may be a vinyl dielectric such as an alkyl (meth)acrylic acid, a styrene, a vinyl acetate, a vinyl halide or an olefin.

具有前述共聚物中的各官能基的共聚合單位的比例可以作適當的設定。具有季銨鹽基的共聚合單位的比例,相對於全共聚合單位的合計較佳為15~40莫耳%。該比例在15莫耳%以上時抗靜電效果較佳。若超過40莫耳%的話,共聚物的親水性會有過高的風險。具有羧基的單位的比例,相對於全單位的合計較佳為3~13莫耳%。 The ratio of the copolymerization unit having each functional group in the aforementioned copolymer can be appropriately set. The proportion of the copolymerization unit having a quaternary ammonium salt group is preferably from 15 to 40 mol% based on the total of the total copolymerization units. When the ratio is 15 mol% or more, the antistatic effect is better. If it exceeds 40 mol%, the hydrophilicity of the copolymer may be too high. The ratio of the unit having a carboxyl group is preferably from 3 to 13 mol% based on the total of the units.

前述共聚物在側基有羧基時,可以在前述共聚物添加交聯劑(硬化劑)。作為交聯劑,可以是:甘油二縮水甘油基醚等的2官能環氧化合物、三羥甲基丙烷三縮水甘油醚等的3官能環氧化合物、三羥甲基丙烷三嗪基醚等的乙烯亞胺化合物等的多官能化合物。 When the copolymer has a carboxyl group in the side group, a crosslinking agent (hardener) may be added to the copolymer. The crosslinking agent may be a bifunctional epoxy compound such as glycerol diglycidyl ether or a trifunctional epoxy compound such as trimethylolpropane triglycidyl ether or trimethylolpropane triazinyl ether. A polyfunctional compound such as an ethyleneimine compound.

在前述共聚物,作為前述2官能、3官能的環氧化合物的開環反應的催化劑,可以添加2-甲基咪唑、2-乙基、 4-甲基咪唑等的咪唑介電體或其他胺類。 In the above copolymer, as a catalyst for ring-opening reaction of the above-mentioned bifunctional or trifunctional epoxy compound, 2-methylimidazole or 2-ethyl group may be added. An imidazole dielectric or other amine such as 4-methylimidazole.

π共軛系導電性高分子為具有π共軛發達的主鏈的導電性高分子。作為π共軛系導電性高分子,可以使用習知之物,例如,聚噻吩、聚吡咯、聚苯胺、其等的介電體等。 The π-conjugated conductive polymer is a conductive polymer having a main chain of π-conjugated development. As the π-conjugated conductive polymer, a conventional one can be used, for example, a polythiophene, a polypyrrole, a polyaniline, a dielectric body thereof, or the like.

高分子系抗靜電劑可以用習知的方法來製造完成的,也可以使用市售的。例如作為在側基具有季銨鹽基及接基的共聚物的市售品,可以是KONISHI公司製的「BONDEIP(BONDEIP,商標名)-PA100主劑」等。 The polymer antistatic agent can be produced by a known method, and can also be used commercially. For example, a commercially available product of a copolymer having a quaternary ammonium salt group and a base group in the side group may be "BONDEIP (BONDEIP, trade name) - PA100 main agent" manufactured by KONISHI Co., Ltd., or the like.

作為含有高分子系抗靜電劑的層2B1的較佳態樣,可以是以下的層(1)及層(4)等。 As a preferable aspect of the layer 2B1 containing a polymer type antistatic agent, the following layer (1), layer (4), etc. are mentioned.

層(1):高分子系抗靜電劑自體具有薄膜形成能,將前述高分子系抗靜電劑原封不動,或溶解於溶劑中並濕式塗佈,因應必要乾燥而形成的層。 Layer (1): A polymer-based antistatic agent has a film forming ability, and the polymer antistatic agent is left as it is, or is dissolved in a solvent and wet-coated, and is formed by drying.

層(2):高分子系抗靜電劑自體具有薄膜形成能,且可溶融,將前述高分子系抗靜電劑溶融塗佈而形成的層。 Layer (2): a layer in which a polymer-based antistatic agent has a film forming ability and is meltable, and the polymer-based antistatic agent is melt-coated.

層(3):結合劑具有薄膜形成能,且可溶融,在前述結合劑將前述高分子系抗靜電劑分散或溶解的組成物溶融塗佈而形成的層。 Layer (3): a layer in which a binder has a film forming ability and is meltable, and a composition in which the binder is dispersed or dissolved by the polymer antistatic agent is melt-coated.

層(4):結合劑具有薄膜形成能,將包含前述結合劑及高分子系抗靜電劑的組成物原封不動,或溶解於溶劑中並濕式塗佈,因應必要乾燥而形成的層。但是,相當於層(1)者並不相當於層(4)。 Layer (4): A layer having a film forming ability, a composition containing the above-mentioned binder and a polymer-based antistatic agent, or a solution which is dissolved in a solvent and wet-coated, and dried as necessary. However, the equivalent of layer (1) does not correspond to layer (4).

在層(1)中,所謂的高分子系抗靜電劑自體具有薄膜形成能指的是:高分子抗靜電劑可溶於有機溶劑等的溶劑,將該溶液濕式塗佈並使乾燥時,形成膜的意思。 In the layer (1), the polymer-based antistatic agent itself has a film forming energy: the polymer antistatic agent is soluble in a solvent such as an organic solvent, and the solution is wet-coated and dried. , the meaning of forming a film.

在層(2)中,所謂的高分子系抗靜電劑自體可溶融指的是藉由加熱溶融。有關層(3)(4)中的結合劑的「具有薄膜形成能」、「可溶融」也有相同的意思。 In the layer (2), the so-called polymer-based antistatic agent is self-meltable, which means melting by heating. The "film forming energy" and "meltable" of the bonding agent in the layers (3) and (4) have the same meaning.

在層(1)中的高分子系抗靜電劑可以具有交聯性,也可以不具有交聯性。當高分子系抗靜電劑具有交聯性時,可以併用交聯劑。 The polymer antistatic agent in the layer (1) may or may not have crosslinkability. When the polymer antistatic agent has crosslinkability, a crosslinking agent can be used in combination.

作為具有薄膜形成能及交聯性的高分子系抗靜電劑,可以是在前述側基具有季銨鹽基及羧基的共聚物等。 The polymer antistatic agent having a film forming ability and crosslinkability may be a copolymer having a quaternary ammonium salt group and a carboxyl group in the side group.

作為交聯劑可以是與前述相同者。 The crosslinking agent may be the same as described above.

層(1)的厚度較佳為0.01~1.0μm,特佳為0.03~0.5μm。層(1)的厚度為0.01μm以上的話可以容易獲得充分的抗靜電效果,若為1.0μm以下的話,在層積時可以容易得到充足的黏接性。 The thickness of the layer (1) is preferably from 0.01 to 1.0 μm, particularly preferably from 0.03 to 0.5 μm. When the thickness of the layer (1) is 0.01 μm or more, a sufficient antistatic effect can be easily obtained, and when it is 1.0 μm or less, sufficient adhesion can be easily obtained at the time of lamination.

作為在層(2)中的高分子系抗靜電劑,可以是含有界面活性劑或碳黑等的聚烯烴樹脂等。作為市售品,可以是PELECTRON HS(三洋化成工業公司製)等。層(2)的厚度的較佳範圍為與層(1)的厚度的較佳範圍一樣。 The polymer antistatic agent in the layer (2) may be a polyolefin resin or the like containing a surfactant or carbon black. As a commercial item, PELECTRON HS (made by Sanyo Chemical Industry Co., Ltd.), etc. can be used. The preferred range of the thickness of the layer (2) is the same as the preferred range of the thickness of the layer (1).

作為層(3)中的結合劑,可以是泛用的熱塑性樹脂。熱塑性樹脂為在溶融成形時以黏接的方式,具有有助於黏接的官能基的樹脂較佳。作為該官能基可以是羰 基等。 As the binder in the layer (3), it may be a general-purpose thermoplastic resin. The thermoplastic resin is preferably a resin having a functional group which contributes to adhesion when it is bonded at the time of melt molding. As the functional group, it may be carbonyl Base.

層(3)中的高分子系抗靜電劑的含有量,相對於層(3)的全體質量,較佳為10~40質量份,特佳為10~30質量份。層(3)的厚度的較佳範圍為與層(1)的厚度的較佳範圍一樣。 The content of the polymer-based antistatic agent in the layer (3) is preferably 10 to 40 parts by mass, particularly preferably 10 to 30 parts by mass, based on the total mass of the layer (3). The preferred range of the thickness of the layer (3) is the same as the preferred range of the thickness of the layer (1).

形成層(4)的組成物的1例為黏接劑。黏接劑意味著含有主劑與硬化劑,並藉由加熱等硬化而發揮黏接性。 One example of the composition forming the layer (4) is an adhesive. The adhesive means that the main component and the hardener are contained, and the adhesiveness is achieved by hardening by heating or the like.

此時,含有高分子系抗靜電劑的層2B1可以相當於含有高分子系抗靜電劑及黏接劑的層2B3。 In this case, the layer 2B1 containing the polymer-based antistatic agent may correspond to the layer 2B3 containing the polymer-based antistatic agent and the binder.

黏接劑可以是1液型黏接劑,也可以是2液型黏接劑。 The adhesive may be a one-component adhesive or a two-component adhesive.

作為形成層(4)的黏接劑(以下,也稱為層(4)形成用黏接劑。)例如,可以是在未含有高分子系抗靜電劑的黏接劑添加高分子系抗靜電劑者等。 As the adhesive for forming the layer (4) (hereinafter, also referred to as a layer (4) forming adhesive), for example, a polymer-based antistatic agent may be added to an adhesive that does not contain a polymer-based antistatic agent. Agents, etc.

在黏接劑添加的高分子系抗靜電劑可以具有薄膜形成能,也可以是沒有薄膜形成能者(例如π共軛系導電性高分子)。 The polymer antistatic agent to be added to the adhesive may have a film forming ability or a film forming ability (for example, a π-conjugated conductive polymer).

作為未含有高分子系抗靜電劑的黏接劑,可以使用作為乾式層合用的黏接劑的習知黏接劑。例如可以使用:聚乙酸乙烯酯系黏接劑;丙烯酸酯(丙烯酸乙酯、丙烯酸丁酯、丙烯酸2-乙基己基酯等)的單獨聚合物或著共聚物、或丙烯酸酯與其他單體(甲基丙烯酸甲酯、丙烯腈、苯乙烯等)的共聚物等所形成的聚丙烯酸酯系黏接劑;氰基丙 烯酸酯系黏接劑;乙烯與其他單體(醋酸乙烯基、丙烯酸酸乙基、丙烯酸酸、甲基丙烯酸等)的共聚物等所形成的乙烯共聚物系黏接劑;纖維素系黏接劑;聚酯系黏接劑;聚醯胺系黏接劑;聚醯亞胺系黏接劑;尿素樹脂或三聚氰胺樹脂等所形成的氨樹脂系黏接劑;苯酚樹脂系黏接劑;環氧系黏接劑;多元醇(聚醚多元醇、聚酯多元醇等)與異氰酸酯及/或與異氰脲酸酯交聯的聚氨酯系黏接劑;反應型(甲基)丙烯酸系黏接劑;由氯丁橡膠、丁腈橡膠、苯乙烯-丁二烯橡膠等所形成的橡膠系黏接劑;由有機矽系黏接劑;鹼金屬矽酸鹽、低熔點玻璃等所形成的無機系黏接劑;其他等的黏接劑。 As the adhesive which does not contain a polymer type antistatic agent, a conventional adhesive which is an adhesive for dry lamination can be used. For example, a polyvinyl acetate-based adhesive; a separate polymer or copolymer of an acrylate (ethyl acrylate, butyl acrylate, 2-ethylhexyl acrylate, etc.), or an acrylate and other monomers can be used ( Polyacrylate adhesive formed by copolymer of methyl methacrylate, acrylonitrile, styrene, etc.; cyanopropyl Ethylene ester-based adhesive; ethylene copolymer-based adhesive formed by copolymer of ethylene and other monomers (vinyl acetate, ethyl acrylate, acrylic acid, methacrylic acid, etc.); cellulose-based adhesive Connecting agent; polyester-based adhesive; polyamine-based adhesive; polyimide-based adhesive; ammonia resin-based adhesive formed by urea resin or melamine resin; phenol resin-based adhesive; Epoxy adhesive; polyol (polyether polyol, polyester polyol, etc.) and isocyanate and / or polyurethane-based adhesive cross-linked with isocyanurate; reactive (meth) acrylic adhesive a rubber-based adhesive formed of chloroprene rubber, nitrile rubber, styrene-butadiene rubber, etc.; formed of an organic bismuth-based adhesive; an alkali metal silicate, a low-melting glass, or the like Inorganic adhesives; other adhesives.

層(4)形成用黏接劑中的高分子系抗靜電劑的含有量,使層(4)的表面固有電阻值為1010Ω/□以下的量較佳,109Ω/□以下的量特佳。 The content of the polymer-based antistatic agent in the layer (4) is preferably such that the surface specific resistance of the layer (4) is preferably 10 10 Ω/□ or less, and 10 9 Ω/□ or less. Very good amount.

從抗靜電的觀點來看,層(4)形成用黏接劑中的高分子系抗靜電劑的含有量越多越好,但高分子系抗靜電劑為π共軛系導電性高分子,將在未含有高分子系抗靜電劑的黏接劑中添加π共軛系導電性高分子者作為層(4)形成用黏接劑使用,而形成層2B1時,高分子系抗靜電劑的含有量變多的話,層(4)的黏接性降低下,第1熱塑性樹脂層2與第2熱塑性樹脂層3之間的密著性會有不充足的問題。因此,此時的層(4)形成用黏接劑中的高分子系抗靜電劑的含有量,相對於成為黏結劑的樹脂的固態成分,40質量%以下較佳,30質量%以下特佳。下限值為 1質量%較佳,5質量%特佳。 From the viewpoint of antistatic, the content of the polymer-based antistatic agent in the layer (4) forming adhesive is preferably as large as possible, but the polymer-based antistatic agent is a π-conjugated conductive polymer. When a π-conjugated conductive polymer is added to an adhesive that does not contain a polymer-based antistatic agent, it is used as a layer (4) forming adhesive, and when a layer 2B1 is formed, a polymer-based antistatic agent is used. When the content of the first layer (4) is lowered, the adhesion between the first thermoplastic resin layer 2 and the second thermoplastic resin layer 3 may be insufficient. Therefore, the content of the polymer-based antistatic agent in the adhesive for forming the layer (4) at this time is preferably 40% by mass or less, and preferably 30% by mass or less based on the solid content of the resin which is a binder. . Lower limit 1% by mass is preferred, and 5% by mass is particularly preferred.

層(4)的厚度較佳為0.2~5μm,特佳為0.5~2μm。層(4)的厚度在前述範圍的下限值以上的話,第1熱塑性樹脂層與第2熱塑性樹脂層之間的黏接性佳,此外,抗靜電性也佳。若在前述範圍的上限值以下對生產性也佳。 The thickness of the layer (4) is preferably 0.2 to 5 μm, particularly preferably 0.5 to 2 μm. When the thickness of the layer (4) is at least the lower limit of the above range, the adhesion between the first thermoplastic resin layer and the second thermoplastic resin layer is good, and the antistatic property is also good. If it is below the upper limit of the above range, productivity is also good.

具有層2B1的高分子系抗靜電層可以是1層也可以是2層以上。例如可以僅有層(1)~(4)中的任一種,也可以具有2種以上。 The polymer-based antistatic layer having the layer 2B1 may be one layer or two or more layers. For example, only one of the layers (1) to (4) may be used, or two or more of them may be used.

作為含有高分子系抗靜電層,在容易製造的點上,層(1)較佳。也可以併用層(1)與層(2)~(4)中的任一種。 As the polymer-based antistatic layer, the layer (1) is preferable at the point of easy production. It is also possible to use either of layer (1) and layer (2) to (4) in combination.

黏接層2B2 Adhesive layer 2B2

在構成本案第2發明的層積體的耐熱樹脂層2B中,作為適合使用的黏接層2B2中所含有的黏接劑,可以適當地使用從前習知的黏接劑。從本案第2發明的層積體的製造效率的觀點來看,使用乾式層合用的黏接劑較佳。例如可以使用:聚乙酸乙烯酯系黏接劑;丙烯酸酯(丙烯酸乙酯、丙烯酸丁酯、丙烯酸2-乙基己基酯等)的單獨聚合物或著共聚物、或丙烯酸酯與其他單體(甲基丙烯酸甲酯、丙烯腈、苯乙烯等)的共聚物等所形成的聚丙烯酸酯系黏接劑;氰基丙烯酸酯系黏接劑;乙烯與其他單體(醋酸乙烯基、丙烯酸酸乙基、丙烯酸酸、甲基丙烯酸等)的共聚 物等所形成的乙烯共聚物系黏接劑;纖維素系黏接劑;聚酯系黏接劑;聚醯胺系黏接劑;聚醯亞胺系黏接劑;尿素樹脂或三聚氰胺樹脂等所形成的氨樹脂系黏接劑;苯酚樹脂系黏接劑;環氧系黏接劑;多元醇(聚醚多元醇、聚酯多元醇等)與異氰酸酯及/或與異氰脲酸酯交聯的聚氨酯系黏接劑;反應型(甲基)丙烯酸系黏接劑;由氯丁橡膠、丁腈橡膠、苯乙烯-丁二烯橡膠等所形成的橡膠系黏接劑;由有機矽系黏接劑;鹼金屬矽酸鹽、低熔點玻璃等所形成的無機系黏接劑;其他等的黏接劑。 In the heat-resistant resin layer 2B constituting the laminate of the second invention of the present invention, a conventionally known adhesive can be suitably used as the adhesive contained in the adhesive layer 2B2 which is suitably used. From the viewpoint of the production efficiency of the laminate of the second invention of the present invention, it is preferred to use an adhesive for dry lamination. For example, a polyvinyl acetate-based adhesive; a separate polymer or copolymer of an acrylate (ethyl acrylate, butyl acrylate, 2-ethylhexyl acrylate, etc.), or an acrylate and other monomers can be used ( Polyacrylate adhesive formed by copolymer of methyl methacrylate, acrylonitrile, styrene, etc.; cyanoacrylate adhesive; ethylene and other monomers (vinyl acetate, acrylic acid B) Copolymerization of base, acrylic acid, methacrylic acid, etc. Ethylene copolymer-based adhesive formed by materials; cellulose-based adhesive; polyester-based adhesive; polyamine-based adhesive; polyimide-based adhesive; urea resin or melamine resin An amino resin-based adhesive formed; a phenol resin-based adhesive; an epoxy-based adhesive; a polyol (polyether polyol, polyester polyol, etc.) and an isocyanate and/or an isocyanurate Jointed polyurethane-based adhesive; reactive (meth)acrylic adhesive; rubber-based adhesive formed from neoprene, nitrile rubber, styrene-butadiene rubber, etc.; Adhesives; inorganic binders formed by alkali metal silicates, low-melting glasses, etc.; other adhesives.

含有高分子系抗靜電劑及黏接劑的層2B3 Layer 2B3 containing a polymer antistatic agent and an adhesive

在構成本案第2發明的層積體的耐熱樹脂層2B中,作為適合使用的含有高分子系抗靜電劑及黏接劑的層2B3中所含有的高分子系抗靜電劑,較佳可以使用與含有高分子系抗靜電劑的層2B1有關的與上述相同的高分子系抗靜電劑,作為黏接劑,較佳可以使用與含有黏接劑的黏接層2B2有關的與上述相同的黏接劑。 In the heat-resistant resin layer 2B constituting the laminate of the second invention of the present invention, a polymer-based antistatic agent contained in the layer 2B3 containing a polymer-based antistatic agent and a binder which is suitably used can be preferably used. The polymer antistatic agent similar to the above described in relation to the layer 2B1 containing a polymer-based antistatic agent, as the binder, preferably the same adhesive as described above for the adhesive layer 2B2 containing the adhesive. Ingredients.

在上述的層(4)中,當形成層(4)的組成物為黏接劑時,作為含有高分子系抗靜電劑及黏接劑的層2B3的態樣,是特佳的一例。 In the layer (4) described above, when the composition of the layer (4) is an adhesive, it is a particularly preferable example of the layer 2B3 containing a polymer-based antistatic agent and an adhesive.

除此之外的層 Layer other than this

本案第2發明的製程用離型薄膜只要在不違反本案第2發明的目的內,也可以具有離型層2A、耐熱樹脂層 2B、及離型層2A’以外的層。上述除此之外的層的詳細,與有關本案第1發明所說明的一樣。 The release film for process of the second aspect of the present invention may have a release layer 2A and a heat resistant resin layer as long as it does not violate the object of the second invention. 2B, and a layer other than the release layer 2A'. The details of the layers other than the above are the same as those described in the first invention of the present invention.

本案第2發明的製程用離型薄膜的總厚度雖沒有特別的限制,但例如較佳為10~300μm,更佳為30~150μm。若離型薄膜的總厚度在上述範圍內的話,在作為捲物使用時的處理性良好的同時,薄膜的廢棄量較少,因此較佳。 The total thickness of the release film for a process according to the second aspect of the invention is not particularly limited, but is, for example, preferably 10 to 300 μm, more preferably 30 to 150 μm. When the total thickness of the release film is within the above range, the handleability when used as a roll is good, and the amount of waste of the film is small, which is preferable.

以下,更具體地說明有關本案第2發明的製程用離型薄膜的較佳實施形態。圖1為表示3層構造的製程用離型薄膜的一例之模式圖。如圖1所示,離型薄膜10具有:耐熱樹脂層12、在其一面隔著黏接層14而形成的離型層16。 Hereinafter, a preferred embodiment of the release film for a process according to the second invention of the present invention will be described more specifically. FIG. 1 is a schematic view showing an example of a release film for a three-layer structure. As shown in FIG. 1, the release film 10 has a heat resistant resin layer 12 and a release layer 16 formed on one surface thereof via an adhesive layer 14.

離型層16為前述的離型層2A,耐熱樹脂層12為前述的耐熱樹脂層2B,黏接層14為前述的黏接層。離型層16在封裝製程中配置於與封裝樹脂相接側較佳;耐熱樹脂層12在封裝製程中配置於與金屬模內面相接側較佳。 The release layer 16 is the aforementioned release layer 2A, the heat resistant resin layer 12 is the aforementioned heat resistant resin layer 2B, and the adhesive layer 14 is the aforementioned adhesive layer. The release layer 16 is preferably disposed on the side in contact with the encapsulating resin in the packaging process; and the heat resistant resin layer 12 is preferably disposed on the side in contact with the inner surface of the metal mold in the packaging process.

圖2為表示5層構造的製程用離型薄膜的一例之模式圖。與圖1具有同一機能的構件會附加同一符號。如圖2所示,離型薄膜20具有:耐熱樹脂層12、在其兩面隔著黏接層14而形成的離型層16A及離型層16B。離型層16A為前述的離型層2A,耐熱樹脂層12為前述的耐熱樹脂層2B,離型層16B為前述的離型層2A’,黏接層14為分別前述的黏接層。 2 is a schematic view showing an example of a release film for a process having a five-layer structure. Components having the same functions as those of Fig. 1 will be given the same reference numerals. As shown in FIG. 2, the release film 20 has a heat resistant resin layer 12, and a release layer 16A and a release layer 16B which are formed on the both surfaces thereof via the adhesive layer 14. The release layer 16A is the release layer 2A described above, the heat resistant resin layer 12 is the above-mentioned heat resistant resin layer 2B, the release layer 16B is the release layer 2A' described above, and the adhesive layer 14 is the above-mentioned adhesive layer.

離型層16A及16B的組成可以互相相同或相異。離型層16A及16B的厚度也可以互相相同或相異。但是,若離型層16A及16B相互具有相同的組成及厚度的話,會成為對稱構造,因變得難以產生離型薄膜自體的彎曲所以較佳。特別是,本案第2發明的離型薄膜在封裝製程中因加熱會產生應力,因此在抑制彎曲上較佳。因此,離型層16A及16B在耐熱樹脂層12的兩面形成後,成形品及金屬模內面的任一者,都能夠得到良好的離型性因此較佳。 The composition of the release layers 16A and 16B may be the same or different from each other. The thickness of the release layers 16A and 16B may also be the same or different from each other. However, if the release layers 16A and 16B have the same composition and thickness, they will have a symmetrical structure, and it is preferable that the release film is hard to be bent by itself. In particular, in the release film of the second invention of the present invention, stress is generated by heating during the packaging process, and therefore it is preferable to suppress bending. Therefore, after the release layers 16A and 16B are formed on both surfaces of the heat-resistant resin layer 12, it is preferable that either of the molded article and the inner surface of the mold can obtain good release property.

製程用離型薄膜的製造方法 Method for manufacturing release film for process

本案第2發明的製程用離型薄膜可以由任意的方法來製造,但其較佳的製造方法為與本案第1發明所說明的一樣。 The release film for process of the second invention of the present invention can be produced by any method, but the preferred production method is the same as that described in the first invention of the present invention.

製造過程 Manufacturing process

本案第2發明的製程用離型薄膜,係能在金屬模內配置半導體晶片等將樹脂注入成形時,在半導體晶片等與金屬模內面之間配置並使用。因為用本案第2發明的製程用離型薄膜,能夠有效地防止從金屬模的離型不良、毛邊的發生等。 In the release film for a process according to the second aspect of the invention, a semiconductor wafer or the like can be placed in a mold, and when a resin is injection-molded, it can be disposed between a semiconductor wafer or the like and an inner surface of the mold. According to the release film for process of the second aspect of the invention, it is possible to effectively prevent the release from the mold, the occurrence of burrs, and the like.

上述製造過程所用的樹脂可以是熱塑性樹脂、熱固性樹脂的任一者,但在該技術領域中,熱固性樹脂已被廣泛地使用,特別是使用環氧系的熱固性樹脂較佳。 The resin used in the above production process may be any of a thermoplastic resin and a thermosetting resin, but thermosetting resins have been widely used in the technical field, and particularly, an epoxy-based thermosetting resin is preferable.

作為上述製造過程,半導體晶片的封裝是最具代表性的,但並不以此為限,本案第2發明也可以適用於纖維強化塑膠成形製程、塑膠透鏡成形製程等。 As the above-mentioned manufacturing process, the packaging of the semiconductor wafer is the most representative, but it is not limited thereto, and the second invention of the present invention can also be applied to a fiber reinforced plastic molding process, a plastic lens forming process, and the like.

使用本案第2發明的製程用離型薄膜的上述製造過程的詳細,但與本案第1發明所說明的一樣。 The details of the above-described manufacturing process of the release film for process of the second invention of the present invention are the same as those described in the first invention of the present invention.

本案第2發明的離型薄膜,不限於將半導體元件樹脂封裝的工程,在使用成型金屬模將各種成形品成形及離型的工程,例如纖維強化塑膠成形及離型工程、塑膠透鏡成形及離型工程等中也可以較佳地被使用。 The release film of the second invention of the present invention is not limited to a process of encapsulating a semiconductor element resin, and is a process of molding and releasing various molded articles using a molding die, for example, fiber reinforced plastic molding and release molding, plastic lens molding and separation. Type engineering or the like can also be preferably used.

[實施例] [Examples]

以下,基於實施例來更進一步說明本案第1發明及第2發明,但本案第1發明及第2發明並不僅限於該等例。 Hereinafter, the first invention and the second invention of the present invention will be further described based on the examples, but the first invention and the second invention of the present invention are not limited to the examples.

在以下的實施例/參照例中,物性/特性的評價以下述的方法進行。 In the following examples/reference examples, the evaluation of physical properties/characteristics was carried out by the following method.

(熱尺寸變化率) (thermal dimensional change rate)

將薄膜樣本在薄膜的縱(MD)方向及橫(TD)方向分別以長度20mm、寬度4mm切取出,利用TA儀器公司製TMA(熱機械分析裝置,製品名:Q400),在夾盤間距離8mm以施加0.005N的荷重狀態,以23℃保持5分鐘後,從23℃以10℃/分的昇溫速度昇溫到120℃,測定各個方向的尺寸變化,並由下述式(1)來算出尺寸變化率。 The film sample was cut out in the longitudinal (MD) direction and the transverse (TD) direction of the film by a length of 20 mm and a width of 4 mm, respectively, and the distance between the chucks was measured by TMA (thermo-mechanical analysis device, product name: Q400) manufactured by TA Instruments Co., Ltd. 8 mm was applied at 23 ° C for 5 minutes while applying a load of 0.005 N, and then the temperature was raised from 120 ° C at a temperature increase rate of 10 ° C /min from 23 ° C, and the dimensional change in each direction was measured and calculated by the following formula (1). Dimensional change rate.

熱尺寸變化率(%)(23→120℃)={[(L2-L1)/L1]×100}‧‧‧(1) Thermal dimensional change rate (%) (23 → 120 ° C) = {[(L 2 - L 1 ) / L 1 ] × 100} ‧ ‧ (1)

L1:23℃時的樣本長(mm) L 1 : sample length (mm) at 23 ° C

L2:120℃時的樣本長(mm) L 2 : sample length (mm) at 120 ° C

同樣地,從23℃以10℃/分的昇溫速度昇溫到170℃,測定各個方向的尺寸變化,並由下述式(2)來算出尺寸變化率。 Similarly, the temperature was raised from 170 ° C at a temperature increase rate of 10 ° C /min to 23 ° C, and the dimensional change in each direction was measured, and the dimensional change ratio was calculated from the following formula (2).

熱尺寸變化率(%)(23→170℃)={[(L3-L1)/L1]×100}‧‧‧(2) Thermal dimensional change rate (%) (23 → 170 ° C) = {[(L 3 - L 1 ) / L 1 ] × 100} ‧ ‧ (2)

L1:23℃時的樣本長(mm) L 1 : sample length (mm) at 23 ° C

L3:170℃時的樣本長(mm) L 3 : sample length (mm) at 170 ° C

相對於水的接觸角(水接觸角) Contact angle with respect to water (water contact angle)

以JIS R3257為準據,使用接觸角測定器(Kyowa Inter face Science公司製,FACECA-W)來測定離型層A等的表面的水接觸角。 The water contact angle of the surface of the release layer A or the like was measured using a contact angle measuring instrument (FACECA-W, manufactured by Kyowa Interface Science Co., Ltd.) in accordance with JIS R3257.

(拉伸彈性率) (tensile modulus)

拉伸彈性率的測定方法 Method for measuring tensile modulus

以JIS K7127為準據,求出在23℃、120℃、170℃的拉伸彈性率。 The tensile modulus at 23 ° C, 120 ° C, and 170 ° C was determined based on JIS K7127.

測定條件:拉伸模式 Measurement conditions: tensile mode

測定方向:薄膜的縱(MD)方向(薄膜搬送方向) Measurement direction: longitudinal (MD) direction of the film (film transport direction)

(表面固有電阻值) (surface specific resistance value)

將從得到的離型薄膜所切取出的10×10cm的試驗片,以溫度23℃、濕度50% RH經24小時的保存。之後,使用Advantest公司製數位超高電阻/微量電流計(8340A)與電阻室(R12704),施加電壓0.10V、溫度23℃、濕度50% RH作測定。 A 10 × 10 cm test piece cut out from the obtained release film was stored at a temperature of 23 ° C and a humidity of 50% RH for 24 hours. Thereafter, a digital ultra-high resistance/micro current meter (8340A) and a resistance chamber (R12704) manufactured by Advantest Co., Ltd. were used, and a voltage of 0.10 V, a temperature of 23 ° C, and a humidity of 50% RH were measured.

(灰附著試驗) (ash adhesion test)

離型薄膜的抗靜電性在20℃、50% RH的環境下,將離型薄膜以聚酯纖維的布作10次摩擦後,調查灰的附著, Antistatic property of release film Under the environment of 20 ° C and 50% RH, the release film was rubbed with a polyester fiber cloth for 10 times, and the adhesion of ash was investigated.

無附著:○ No attachment: ○

附著顯著:×。 Significant adhesion: ×.

(熔點(Tm)、結晶熔解熱量) (melting point (Tm), crystal melting heat)

作為示差掃描熱量計(DSC)使用TA Instruments Japan公司製Q100,精確秤稱聚合物試料約5mg,以JISK7121為準據,在氮氣流入量:50ml/分的條件下,從25℃開始以加熱速度:10℃/分昇溫至280℃測定熱熔解曲線,從得到的熱熔解曲線求出試料的熔點(Tm)及結晶熔解熱量。 As a differential scanning calorimeter (DSC), Q100 manufactured by TA Instruments Japan Co., Ltd. was used to accurately weigh approximately 5 mg of the polymer sample, based on JIS K7121, and the heating rate was started at 25 ° C under the condition of nitrogen inflow: 50 ml/min. The temperature was raised to 280 ° C at 10 ° C / min to measure the thermal melting curve, and the melting point (Tm) of the sample and the heat of crystal melting were determined from the obtained thermal melting curve.

(離型性) (release)

將以各實施例/參照例所製作的製程用離型薄膜以如圖3所示的方式,在上模與下模之間以施加10N的張力的 狀態配置後,使之真空吸附至上模的分模面。接著,以包覆半導體晶片的方式,在基板上填充封裝樹脂後,將固定於基板的半導體晶片配置於下模,並合模。此時,將成形金屬模的溫度(成形溫度)設為120℃、成形壓力設為10MPa、成形時間設為400秒。接著,如圖3c所示,將半導體晶片以封裝樹脂封裝後,將經樹脂封裝的半導體晶片(半導體封裝體)從離型薄膜離型。 The release film for the process produced by each of the examples/reference examples was applied with a tension of 10 N between the upper mold and the lower mold in the manner shown in FIG. After the state is configured, it is vacuum-adsorbed to the parting surface of the upper mold. Next, after encapsulating the semiconductor wafer on the substrate, the semiconductor wafer fixed to the substrate is placed in the lower mold and the mold is closed. At this time, the temperature (forming temperature) of the molding die was set to 120 ° C, the molding pressure was set to 10 MPa, and the molding time was set to 400 seconds. Next, as shown in FIG. 3c, after the semiconductor wafer is encapsulated with a sealing resin, the resin-encapsulated semiconductor wafer (semiconductor package) is released from the release film.

離型薄膜的離型性由以下的基準評價。 The release property of the release film was evaluated by the following criteria.

◎:離型薄膜在金屬模開放的同時自然地剝離。 ◎: The release film was naturally peeled off while the mold was open.

○:離型薄膜雖未自然地剝離,但以手拉伸(施加張力)即可簡單地剝離。 ○: Although the release film is not naturally peeled off, it can be easily peeled off by hand stretching (application of tension).

×:離型薄膜緊密附著於半導體封裝體的樹脂封裝面,無法以手剝離。 X: The release film adhered closely to the resin package surface of the semiconductor package and could not be peeled off by hand.

(皺折) (wrinkle)

利用上述工程進行離型後的離型薄膜及半導體封裝體的樹脂封裝面的皺折的狀態,由以下的基準作評價。 The state in which the release film of the release film and the resin package surface of the semiconductor package were wrinkled by the above-described work was evaluated by the following criteria.

◎:離型薄膜及半導體封裝體都完全沒有皺折。 ◎: The release film and the semiconductor package are completely free of wrinkles.

○:離型薄膜僅有一點皺折,但沒有轉印至半導體封裝體的皺折。 ○: The release film was only slightly wrinkled, but was not transferred to the wrinkles of the semiconductor package.

×:離型薄膜不用說,半導體封裝體也有多數皺折。 ×: The release film needless to say, the semiconductor package also has many wrinkles.

(成形品的外觀) (appearance of molded article)

利用上述工程進行離型後的離型薄膜及半導體封裝體 的樹脂封裝面的外觀,由以下的基準作評價。 Release film and semiconductor package after release using the above engineering The appearance of the resin package surface was evaluated by the following criteria.

◎:離型薄膜及半導體封裝體都完全沒有皺折,半導體封裝體外周部完全沒有毛邊。 ◎: The release film and the semiconductor package are completely free of wrinkles, and the periphery of the semiconductor package has no burrs at all.

○:離型薄膜及半導體封裝體都完全沒有皺折或僅有一點皺折,半導體封裝體外周部僅有一點毛邊。 ○: The release film and the semiconductor package are completely free of wrinkles or only a little wrinkles, and the periphery of the semiconductor package has only a little burr.

×:離型薄膜不用說,在半導體封裝體有多數皺折,或半導體封裝體外周部有多數毛邊。 X: It is needless to say that the release film has a large number of wrinkles in the semiconductor package or a large number of burrs on the outer periphery of the semiconductor package.

(金屬模追隨性) (metal mold followability)

利用上述工程進行離型時的離型薄膜的金屬模追隨性,由以下的基準評價。 The metal mold followability of the release film at the time of release by the above-described work was evaluated by the following criteria.

◎:在半導體封裝體完全沒有樹脂缺陷(未填充樹脂的部分)。 ◎: There is no resin defect (portion not filled with resin) in the semiconductor package.

○:在半導體封裝體的端部,僅有一點樹脂缺陷(不過因皺折而起的缺陷除外) ○: There is only a little resin defect at the end of the semiconductor package (except for defects due to wrinkles)

×:在半導體封裝體的端部,有許多樹脂缺陷(不過因皺折而起的缺陷除外) ×: There are many resin defects at the end of the semiconductor package (except for defects due to wrinkles)

[實施例1-1] [Example 1-1]

作為耐熱樹脂層1B,使用膜厚12μm的二軸延伸PET(聚對苯二甲酸)薄膜(東麗股份有限公司製,製品名:Lumirror S10)。該二軸延伸PET薄膜的從23℃到120℃為止的熱尺寸變化率在縱(MD)方向為-0.3%,橫(TD)方向為-0.3%。此外,該二軸延伸PET薄膜的熔點 為258℃,結晶熔解熱量為39.4J/g。 As the heat-resistant resin layer 1B, a biaxially stretched PET (polyterephthalic acid) film (manufactured by Toray Industries, Inc., product name: Lumirror S10) having a film thickness of 12 μm was used. The thermal dimensional change rate of the biaxially stretched PET film from 23 ° C to 120 ° C was -0.3% in the longitudinal (MD) direction and -0.3% in the transverse (TD) direction. In addition, the melting point of the biaxially stretched PET film At 258 ° C, the heat of crystallization melting was 39.4 J/g.

作為離型層1A及1A’,使用無延伸的4-甲基-1-戊烯共聚合樹脂薄膜。具體來說,使用將三井化學股份有限公司製4-甲基-1-戊烯共聚合樹脂(製品名:TPX,品牌名:MX022)」以270℃溶融壓出,將T型鑄模的狹縫寬度作調整,使厚度15μm的無延伸薄膜成膜者。 As the release layers 1A and 1A', a 4-methyl-1-pentene copolymer resin film having no extension was used. Specifically, a slit of a T-die is used by melt-extruding a 4-methyl-1-pentene copolymer resin (product name: TPX, brand name: MX022) manufactured by Mitsui Chemicals Co., Ltd. at 270 ° C. The width was adjusted to make a film having a thickness of 15 μm without stretching film.

無延伸的4-甲基-1-戊烯共聚合樹脂薄膜為在當一方的薄膜表面根據JIS R3257的水接觸角為30°以上時,從黏接劑造成的黏接性提升的觀點來看,施加電暈處理,使之成為30以下。 The non-extended 4-methyl-1-pentene copolymer resin film is obtained from the viewpoint of improving the adhesion of the adhesive when the water contact angle of one of the film surfaces is 30° or more according to JIS R3257. Apply a corona treatment to make it 30 or less.

該4-甲基-1-戊烯薄膜的從23℃到120℃為止的熱尺寸變化率在縱(MD)方向為6.5%,橫(TD)方向為3.1%。 The thermal dimensional change rate of the 4-methyl-1-pentene film from 23 ° C to 120 ° C was 6.5% in the longitudinal (MD) direction and 3.1% in the transverse (TD) direction.

(黏接劑) (adhesive)

在貼合各薄膜的乾式層積工程中所使用的黏接劑,係使用以下的聚氨酯系黏接劑A The adhesive used in the dry lamination process for bonding the respective films uses the following polyurethane-based adhesive A.

[聚氨酯系黏接劑A] [Polyurethane adhesive A]

主劑:TAKELAC A-616(三井化學公司製)。硬化劑:TAKENATA A-65(三井化學公司製)。將主劑與硬化劑以質量比(主劑:硬化劑)為16:1混合,作為稀釋劑則使用醋酸乙基。 Main agent: TAKELAC A-616 (manufactured by Mitsui Chemicals, Inc.). Hardener: TAKENATA A-65 (manufactured by Mitsui Chemicals, Inc.). The main agent and the hardener were mixed at a mass ratio (main agent: hardener) of 16:1, and as a diluent, ethyl acetate was used.

(離型薄膜的製造) (Manufacture of release film)

在二軸延伸PET(聚對苯二甲酸)薄膜的一方之面,利用凹印塗佈將聚氨酯系黏接劑A以1.5g/m2作塗佈,將無延伸的4-甲基-1-戊烯共聚合樹脂薄膜的電暈處理面以乾式層合貼合後,接著在該層合薄膜的二軸延伸PET(聚對苯二甲酸)薄膜面側,將聚氨酯系黏接劑A以1.5g/m2作塗佈,將無延伸的4-甲基-1-戊烯共聚合樹脂薄膜的電暈處理面以乾式層合貼合,得到5層構造(離型層1A/黏接層/耐熱樹脂層1B/黏接層/離型層1A’)的製程用離型薄膜。 On one side of the biaxially stretched PET (polyterephthalic acid) film, the polyurethane-based adhesive A was coated with 1.5 g/m 2 by gravure coating, and the 4-methyl-1 without extension was applied. After the corona-treated surface of the pentene copolymer resin film is bonded by dry lamination, and then on the side of the biaxially stretched PET (polyterephthalic acid) film of the laminated film, the urethane-based adhesive A is 1.5 g/m 2 was applied, and the corona-treated surface of the unstretched 4-methyl-1-pentene copolymer resin film was laminated by dry lamination to obtain a 5-layer structure (release layer 1A/bonding) A release film for the process of the layer/heat resistant resin layer 1B/adhesive layer/release layer 1A').

乾式層合條件設為:基材寬度900mm、搬送速度30m/分、乾燥溫度50~60℃、層合輥溫度50℃、輥壓力3.0MPa。 The dry lamination conditions were as follows: a substrate width of 900 mm, a conveying speed of 30 m/min, a drying temperature of 50 to 60 ° C, a laminating roll temperature of 50 ° C, and a roll pressure of 3.0 MPa.

該製程用離型薄膜的從23℃到120℃為止的熱尺寸變化率在縱(MD)方向為2.1%,橫(TD)方向為1.5%。 The thermal dimensional change rate of the release film for this process from 23 ° C to 120 ° C was 2.1% in the longitudinal (MD) direction and 1.5% in the transverse (TD) direction.

離型性、皺折、及金屬模追隨性的評價結果顯示於表1-1。離型薄膜在金屬模開放的同時自然地表現出剝離的良好離型性,離型薄膜及半導體封裝體的任一者完全無皺折,也就是說能充分控制皺折,在半導體封裝體表現出完全無樹脂缺陷的良好金屬模追隨性。也就是說,實施例1-1的製程用離型薄膜,是離型性、皺折的抑制、及金屬模追隨性良好的製程用離型薄膜。 The evaluation results of the release property, the wrinkles, and the followability of the metal mold are shown in Table 1-1. The release film naturally exhibits good release property of the release film while the metal mold is open, and any of the release film and the semiconductor package is completely wrinkle-free, that is, the wrinkle can be sufficiently controlled to be expressed in the semiconductor package. Good metal mold followability with no resin defects. In other words, the release film for the process of Example 1-1 is a release film for a process which is excellent in release property, wrinkle suppression, and metal mold followability.

[實施例1-2~1-9] [Example 1-2~1-9]

以表1-1所表示的組合除了將表1-1記載的各薄膜作為離型層1A及1A’和耐熱樹脂層1B使用以外,與實施例1-1一樣製作製程用離型薄膜,進行封裝、離型,並評價特性。結果顯示於表1-1。 The release film shown in Table 1-1 was produced in the same manner as in Example 1-1 except that each of the films described in Table 1-1 was used as the release layers 1A and 1A' and the heat-resistant resin layer 1B. Package, release, and evaluate features. The results are shown in Table 1-1.

雖然在一部分,皺折的抑制、或金屬模追隨性不及於實施例1-1,但任何實施例都是離型性、皺折的抑制、及金屬模追隨性為高位階的平衡性良好的製程用離型薄膜。 Although in some cases, the wrinkle suppression or the metal mold followability is inferior to that of Example 1-1, any of the examples is excellent in release property, wrinkle suppression, and metal mold followability with high level balance. Release film for process.

此外,表所記載的各薄膜的詳細,如以下所述。 In addition, the details of each film described in the table are as follows.

(1A1)無延伸4MP-1(TPX)薄膜 (1A1) No extension 4MP-1 (TPX) film

使用三井化學股份有限公司製4-甲基-1-戊烯共聚合樹脂(製品名:TPX,品牌名:MX022)」,形成厚度15μm的無延伸薄膜。(熔點:229℃,結晶熔解熱量:21.7J/g) A 4-methyl-1-pentene copolymer resin (product name: TPX, brand name: MX022) manufactured by Mitsui Chemicals, Inc. was used to form a non-stretched film having a thickness of 15 μm. (Melting point: 229 ° C, heat of crystal melting: 21.7 J/g)

(1A2)無延伸4MP-1(TPX)薄膜 (1A2) No extension 4MP-1 (TPX) film

使用三井化學股份有限公司製4-甲基-1-戊烯共聚合樹脂(製品名:TPX,品牌名:DX818)」,形成厚度15μm的無延伸薄膜。(熔點:235℃,結晶熔解熱量:28.1J/g) A 4-methyl-1-pentene copolymer resin (product name: TPX, brand name: DX818) manufactured by Mitsui Chemicals, Inc. was used to form a non-stretched film having a thickness of 15 μm. (Melting point: 235 ° C, heat of crystal melting: 28.1 J/g)

(1A3)無延伸4MP-1(TPX)薄膜 (1A3) No extension 4MP-1 (TPX) film

使用三井化學股份有限公司製4-甲基-1-戊烯共聚合樹脂(製品名:TPX,品牌名:MX022)」,形成厚度50μm的無延伸薄膜。(熔點:229℃,結晶熔解熱量:21.7J/g) A 4-methyl-1-pentene copolymer resin (product name: TPX, brand name: MX022) manufactured by Mitsui Chemicals, Inc. was used to form a non-stretched film having a thickness of 50 μm. (Melting point: 229 ° C, heat of crystal melting: 21.7 J/g)

(1B1)2軸延伸PET薄膜 (1B1) 2-axis extended PET film

膜厚12μm的二軸延伸PET(聚對苯二甲酸)薄膜(東麗股份有限公司製,製品名:Lumila S10)(熔點:258℃,結晶熔解熱量:39.4J/g) Biaxially stretched PET (polyterpene terephthalate) film having a film thickness of 12 μm (manufactured by Toray Industries, Inc., product name: Lumila S10) (melting point: 258 ° C, heat of crystal melting: 39.4 J/g)

(1B2)2軸延伸尼龍薄膜 (1B2) 2-axis extended nylon film

膜厚15μm的二軸延伸尼龍薄膜(KOHJIN Film & Chemicals股份有限公司製,製品名:BONYL RX)(熔點:212℃,結晶熔解熱量:53.1J/g) Biaxially stretched nylon film having a film thickness of 15 μm (manufactured by KOHJIN Film & Chemicals Co., Ltd., product name: BONYL RX) (melting point: 212 ° C, heat of crystal melting: 53.1 J/g)

(1B3)2軸延伸尼龍薄膜 (1B3) 2-axis extended nylon film

膜厚15μm的二軸延伸尼龍薄膜(出光Unitech股份有限公司製,製品名:UNILON S330)(熔點:221℃,結晶熔解熱量:60.3J/g) Biaxially stretched nylon film with a film thickness of 15 μm (manufactured by Shinko Co., Ltd., product name: UNILON S330) (melting point: 221 ° C, heat of crystal melting: 60.3 J/g)

(1B4)2軸延伸聚丙烯薄膜 (1B4) 2-axis extended polypropylene film

膜厚20μm的二軸延伸聚丙烯薄膜(三井化學東賽璐股份有限公司製,製品名:U-2)(熔點:160℃,結晶熔解熱量:93.3J/g) Biaxially oriented polypropylene film with a film thickness of 20 μm (manufactured by Mitsui Chemicals, Ltd., product name: U-2) (melting point: 160 ° C, heat of crystal melting: 93.3 J/g)

(1B5)無延伸尼龍薄膜 (1B5) Unstretched nylon film

膜厚20μm的無延伸尼龍薄膜(三菱樹脂股份有限公司製,製品名:Dainamiron C)(熔點220℃,結晶熔解熱量:39.4J/g) Non-stretch nylon film with a film thickness of 20 μm (manufactured by Mitsubishi Plastics Co., Ltd., product name: Dainamiron C) (melting point 220 ° C, heat of crystal melting: 39.4 J/g)

(1B6)2軸延伸PET薄膜 (1B6) 2-axis extended PET film

使用膜厚25μm的2軸延伸PET薄膜(teijinfilmsolutions股份有限公司製,製品名:FT3PE)(熔點:214℃,結晶熔解熱量:40.3J/g) A 2-axis extended PET film (manufactured by Teijinfilmsolutions Co., Ltd., product name: FT3PE) having a film thickness of 25 μm (melting point: 214 ° C, heat of crystal melting: 40.3 J/g) was used.

(1B7)無延伸聚對苯二甲酸薄膜 (1B7) non-extended polyterephthalic acid film

使用三菱工程塑料股份有限公司製的聚對苯二甲酸樹脂(品牌名:5020),形成厚度20μm的無延伸薄膜。(熔點:223℃,結晶熔解熱量:49.8J/g) A polyethylene terephthalate resin (brand name: 5020) manufactured by Mitsubishi Engineering Plastics Co., Ltd. was used to form a non-stretch film having a thickness of 20 μm. (Melting point: 223 ° C, heat of crystal melting: 49.8 J/g)

(1B8)無延伸聚對苯二甲酸薄膜 (1B8) non-extended polyterephthalic acid film

使用三菱工程塑料股份有限公司製的聚對苯二甲酸樹脂(品牌名:5505S),形成厚度20μm的無延伸薄膜。(熔點:219℃,結晶熔解熱量:48.3J/g) A polyethylene terephthalate resin (brand name: 5505S) manufactured by Mitsubishi Engineering Plastics Co., Ltd. was used to form a non-stretch film having a thickness of 20 μm. (Melting point: 219 ° C, heat of crystal melting: 48.3 J/g)

(1B9)無延伸聚對苯二甲酸薄膜 (1B9) non-extended polyterephthalic acid film

使用三菱工程塑料股份有限公司製的聚對苯二甲酸樹脂(品牌名:5050),形成厚度50μm的無延伸薄膜。(熔點:223℃,結晶熔解熱量:49.8J/g) A polyethylene terephthalate resin (brand name: 5050) manufactured by Mitsubishi Engineering Plastics Co., Ltd. was used to form a non-stretch film having a thickness of 50 μm. (Melting point: 223 ° C, heat of crystal melting: 49.8 J/g)

(1B10)無延伸聚對苯二甲酸薄膜 (1B10) non-extended polyterephthalic acid film

使用三菱工程塑料股份有限公司製的聚對苯二甲酸樹脂(品牌名:5505S),形成厚度50μm的無延伸薄膜。(熔點:219℃,結晶熔解熱量:48.3J/g) A polyethylene terephthalate resin (brand name: 5505S) manufactured by Mitsubishi Engineering Plastics Co., Ltd. was used to form a non-stretch film having a thickness of 50 μm. (Melting point: 219 ° C, heat of crystal melting: 48.3 J/g)

[參照例1-1~1-3] [Reference Example 1-1~1-3]

將表1-1所示的薄膜1A3、1B9、及1B10,分別單獨作為製程用離型薄膜使用,與實施例1-1一樣進行封裝、離型,並評價製程用離型薄膜的特性。 The films 1A3, 1B9, and 1B10 shown in Table 1-1 were used as separate release films for the process, and packaged and released in the same manner as in Example 1-1, and the properties of the release film for the process were evaluated.

任何參照例其綜合性能上都止於不及於實施例,特別是無法抑制皺折的產生。 The comprehensive performance of any of the reference examples is not inferior to the embodiment, and in particular, the occurrence of wrinkles cannot be suppressed.

[表1] [Table 1]

[實施例1-10~1-14] [Examples 1-10 to 1-14]

以表1-2所表示的組合除了將表1-2記載的各薄膜作為離型層1A及1A’和耐熱樹脂層1B使用以外,與實施例1-1一樣製作製程用離型薄膜,進行封裝、離型,並評價特性。 In the combination shown in Table 1-2, except that each of the films described in Table 1-2 was used as the release layers 1A and 1A' and the heat-resistant resin layer 1B, a release film for a process was produced in the same manner as in Example 1-1. Package, release, and evaluate features.

如圖4所示,將離型薄膜在上模與下模之間以施加20N的張力的狀態配置後,使之真空吸附至上模的分模面。接著,以包覆半導體晶片的方式,在基板上填充封裝樹脂後,將固定於基板的半導體晶片配置於下模,並合模。此時,將成形金屬模的溫度(成形溫度)設為170℃、成形壓力設為10MPa、成形時間設為100秒。接著,如圖3c所示,將半導體晶片以封裝樹脂封裝後,將經樹脂封裝的半導體晶片(半導體封裝體)從離型薄膜離型。結果顯示於表1-2。 As shown in Fig. 4, the release film was placed between the upper mold and the lower mold with a tension of 20 N, and then vacuum-adsorbed to the parting surface of the upper mold. Next, after encapsulating the semiconductor wafer on the substrate, the semiconductor wafer fixed to the substrate is placed in the lower mold and the mold is closed. At this time, the temperature (forming temperature) of the molding die was 170 ° C, the molding pressure was 10 MPa, and the molding time was 100 seconds. Next, as shown in FIG. 3c, after the semiconductor wafer is encapsulated with a sealing resin, the resin-encapsulated semiconductor wafer (semiconductor package) is released from the release film. The results are shown in Table 1-2.

雖然在一部分,金屬模追隨性不及於實施例1-1,但任何實施例都是離型性、皺折的抑制、及金屬模追隨性為高位階的平衡性良好的製程用離型薄膜,特別是實施例1-11到1-13,為離型性、皺折的抑制、及金屬模追隨性良好的製程用離型薄膜。 In some cases, the followability of the metal mold is inferior to that of the embodiment 1-1, but any of the examples is a release film for a process which is excellent in release property, wrinkle suppression, and metal mold followability with a good balance of high order. In particular, Examples 1-11 to 1-13 are release films for process release, wrinkle suppression, and metal mold followability.

[參照例1-4~1-6] [Reference Example 1-4~1-6]

以表1-2所表示的組合除了將表1-2記載的各薄膜作為離型層1A及1A’和耐熱樹脂層1B使用以外,與實施例 1-10到1-14一樣製作製程用離型薄膜,進行封裝、離型,並評價特性。結果顯示於表1-2。 The combination shown in Table 1-2 was used except that each of the films described in Table 1-2 was used as the release layers 1A and 1A' and the heat resistant resin layer 1B. The release film for the process was produced in the same manner as in the case of 1-10 to 1-14, and was packaged, released, and evaluated. The results are shown in Table 1-2.

雖然離型性及金屬模追隨性與實施例一樣好,但無法抑制皺折的發生。 Although the release property and the mold followability are as good as those of the examples, the occurrence of wrinkles cannot be suppressed.

[參照例1-7~1-10] [Reference Example 1-7~1-10]

將表1-2所示的薄膜1A1、1A2、1B9、及1B10,分別單獨作為製程用離型薄膜使用,與實施例1-10到1-14一樣進行封裝、離型,並評價製程用離型薄膜的特性。 The films 1A1, 1A2, 1B9, and 1B10 shown in Table 1-2 were used as separate release films for the process, and packaged and separated as in Examples 1-10 to 1-14, and the process was evaluated. The characteristics of the film.

任何參照例其綜合性能上都止於不及於實施例,特別是無法抑制皺折的產生。 The comprehensive performance of any of the reference examples is not inferior to the embodiment, and in particular, the occurrence of wrinkles cannot be suppressed.

[表2] [Table 2]

[實施例2-1] [Example 2-1]

作為耐熱樹脂層2B的基材B0a,使用膜厚12μm的二軸延伸PET(聚對苯二甲酸)薄膜(東麗股份有限公司製,製品名:Lumirror S10)。 As the base material B0a of the heat-resistant resin layer 2B, a biaxially stretched PET (polyterephthalic acid) film (manufactured by Toray Industries, Inc., product name: Lumirror S10) having a film thickness of 12 μm was used.

作為抗靜電樹脂a,使用PEDOT聚噻吩系樹脂(化研產業公司製,製品名:MC-200),形成含有高分子系抗靜電劑的層。更具體來說,將抗靜電樹脂a在耐熱樹脂層2B的基材2B0a的一面以0.1g/m2的塗佈量作塗佈並乾燥,形成含有高分子系抗靜電劑的層2B1a。 As the antistatic resin a, a PEDOT polythiophene-based resin (product name: MC-200, manufactured by Kasei Kogyo Co., Ltd.) was used to form a layer containing a polymer-based antistatic agent. More specifically, the antistatic resin a is applied and dried on one surface of the base material 2B0a of the heat-resistant resin layer 2B at a coating amount of 0.1 g/m 2 to form a layer 2B1a containing a polymer-based antistatic agent.

賦予由上述所得到的含有高分子系抗靜電劑的層的該二軸延伸PET薄膜(耐熱樹脂層2Ba)的從23℃到120℃為止的熱尺寸變化率在縱(MD)方向為-0.1%,橫(TD)方向為0.6%。此外,該二軸延伸PET薄膜的熔點為258℃,結晶熔解熱量為39.4J/g。 The thermal dimensional change rate from 23 ° C to 120 ° C of the biaxially stretched PET film (heat resistant resin layer 2 Ba) to which the polymer antistatic agent-containing layer obtained as described above is applied is -0.1 in the longitudinal (MD) direction. %, the horizontal (TD) direction is 0.6%. Further, the biaxially stretched PET film had a melting point of 258 ° C and a heat of crystal fusion of 39.4 J/g.

作為離型層2A及2A’,使用無延伸的4-甲基-1-戊烯共聚合樹脂薄膜2Aa(2A’a)。具體來說,使用將三井化學股份有限公司製4-甲基-1-戊烯共聚合樹脂(製品名:TPX,品牌名:MX022)」,使厚度15μm的無延伸薄膜成膜。(熔點:229℃,結晶熔解熱量:21.7J/g) As the release layers 2A and 2A', a 4-methyl-1-pentene copolymer resin film 2Aa (2A'a) having no extension was used. Specifically, a 4-methyl-1-pentene copolymer resin (product name: TPX, brand name: MX022) manufactured by Mitsui Chemicals, Inc. was used to form a film having a thickness of 15 μm without stretching. (Melting point: 229 ° C, heat of crystal melting: 21.7 J/g)

無延伸的4-甲基-1-戊烯共聚合樹脂薄膜為在當一方的薄膜表面根據JIS R3257的水接觸角為30°以上時,從黏接劑造成的黏接性提升的觀點來看,施加電暈處理,使 之成為30以下。 The non-extended 4-methyl-1-pentene copolymer resin film is obtained from the viewpoint of improving the adhesion of the adhesive when the water contact angle of one of the film surfaces is 30° or more according to JIS R3257. Apply corona treatment to make It becomes 30 or less.

該4-甲基-1-戊烯共聚合樹脂2Aa薄膜的從23℃到120℃為止的熱尺寸變化率在縱(MD)方向為6.5%,橫(TD)方向為3.1%。 The thermal dimensional change rate of the 4-methyl-1-pentene copolymer resin 2Aa film from 23 ° C to 120 ° C was 6.5% in the MD (MD) direction and 3.1% in the transverse (TD) direction.

(黏接劑) (adhesive)

作為貼合各薄膜的乾式層積中所使用的黏接劑,係使用以下的聚氨酯系黏接劑a。 The following urethane-based adhesive a was used as the adhesive used for the dry lamination of each film.

[聚氨酯系黏接劑a] [Polyurethane adhesive a]

主劑:TAKELAC A-616(三井化學公司製)。硬化劑:TAKENATA A-65(三井化學公司製)。將主劑與硬化劑以質量比(主劑:硬化劑)為16:1混合,作為稀釋劑則使用醋酸乙基。 Main agent: TAKELAC A-616 (manufactured by Mitsui Chemicals, Inc.). Hardener: TAKENATA A-65 (manufactured by Mitsui Chemicals, Inc.). The main agent and the hardener were mixed at a mass ratio (main agent: hardener) of 16:1, and as a diluent, ethyl acetate was used.

(離型薄膜的製造) (Manufacture of release film)

在賦予該抗靜電層的二軸延伸PET(耐熱樹脂層2Ba)的一方之面,利用凹印塗佈將聚氨酯系黏接劑α以1.5g/m2作塗佈,將無延伸的4-甲基-1-戊烯共聚合樹脂薄膜Aa的電暈處理面以乾式層合貼合後,接著在該層合薄膜的二軸延伸PET薄膜面側,將聚氨酯系黏接劑α以1.5g/m2作塗佈,將無延伸的4-甲基-1-戊烯共聚合樹脂薄膜A’a的電暈處理面以乾式層合貼合,得到5層構造(離型層2A/黏接層/耐熱樹脂層1B/黏接層/離型層2A’)的製程用離型薄膜。 On one side of the biaxially stretched PET (heat resistant resin layer 2Ba) to which the antistatic layer was applied, the urethane-based adhesive α was applied by 1.5 g/m 2 by gravure coating, and the stretch-free 4- The corona-treated surface of the methyl-1-pentene copolymer resin film Aa is adhered by dry lamination, and then the polyurethane-based adhesive α is 1.5 g on the side of the biaxially stretched PET film of the laminated film. /m 2 is applied, and the corona-treated surface of the 4-methyl-1-pentene copolymer resin film A'a which is not extended is laminated by dry lamination to obtain a 5-layer structure (release layer 2A/sticky) A release film for the process of the bonding layer/heat resistant resin layer 1B/adhesive layer/release layer 2A').

乾式層合條件設為:基材寬度900mm、搬送速度30m/分、乾燥溫度50~60℃、層合輥溫度50℃、輥壓力3.0MPa。 The dry lamination conditions were as follows: a substrate width of 900 mm, a conveying speed of 30 m/min, a drying temperature of 50 to 60 ° C, a laminating roll temperature of 50 ° C, and a roll pressure of 3.0 MPa.

該製程用離型薄膜的從23℃到120℃為止的熱尺寸變化率在縱(MD)方向為1.0%,橫(TD)方向為1.4%。 The thermal dimensional change rate of the release film for this process from 23 ° C to 120 ° C was 1.0% in the longitudinal (MD) direction and 1.4% in the transverse (TD) direction.

拉伸彈性率、離型性、成形品的外觀、金屬模追隨性、表面固有電阻值、及灰附著試驗的評價結果顯示於表2-1。離型薄膜在金屬模開放的同時自然地表現出剝離的良好離型性,離型薄膜及半導體封裝體的任一者完全無皺折及毛邊,也就是說能充分控制皺折,在半導體封裝體表現出完全無樹脂缺陷的良好金屬模追隨性。也就是說,實施例2-1的製程用離型薄膜,是離型性、成形品的外觀、及金屬模追隨性良好的製程用離型薄膜。此外,灰附著不被認可。 The tensile modulus, the release property, the appearance of the molded article, the mold followability, the surface specific resistance value, and the evaluation results of the ash adhesion test are shown in Table 2-1. The release film naturally exhibits good release property of the release film while the metal mold is open, and any of the release film and the semiconductor package is completely free of wrinkles and burrs, that is, the wrinkles can be sufficiently controlled in the semiconductor package. The body exhibits good metal mold followability with no resin defects. In other words, the release film for the process of the embodiment 2-1 is a release film for a process which is excellent in release property, appearance of the molded article, and good followability of the metal mold. In addition, ash adhesion is not recognized.

[實施例2-2~2-9] [Example 2-2~2-9]

除了成為以表2-1所表示的薄膜構成以外,與實施例2-1一樣,製作製程用離型薄膜,進行封裝、離型,並評價特性。結果顯示於表2-1。 A release film for a process was produced in the same manner as in Example 2-1 except that the film structure shown in Table 2-1 was used, and the package was released and molded, and the properties were evaluated. The results are shown in Table 2-1.

此外,從表2-1的記載的高分子系抗靜電劑b到e、及包含及的層2B1b到2B1e的詳細如以下所述。 In addition, the details of the polymer antistatic agents b to e described in Table 2-1 and the layers 2B1b to 2B1e included in the following are as follows.

作為抗靜電樹脂b,使用PEDOT聚噻吩系樹脂(中京油脂公司製,製品名:S-495),形成含有高分子系抗 靜電劑的層。更具體來說,將抗靜電樹脂b在耐熱樹脂層2B的基材2B0a的一面以0.3g/m2的塗佈量作塗佈並乾燥,形成含有高分子系抗靜電劑的層2B1b。賦予由上述所得到的含有高分子系抗靜電劑的層的該二軸延伸PET薄膜的從23℃到120℃為止的熱尺寸變化率為表2-1所記載的結果。 As the antistatic resin b, a PEDOT polythiophene-based resin (product name: S-495, manufactured by Nakagisa Oils and Fats Co., Ltd.) was used to form a layer containing a polymer-based antistatic agent. More specifically, the antistatic resin b is applied and dried on one surface of the base material 2B0a of the heat resistant resin layer 2B at a coating amount of 0.3 g/m 2 to form a layer 2B1b containing a polymer antistatic agent. The thermal dimensional change rate from 23 ° C to 120 ° C of the biaxially stretched PET film of the layer containing the polymer antistatic agent obtained above was the result shown in Table 2-1.

作為抗靜電樹脂c,使用PEDOT聚噻吩系樹脂(長瀨產業公司製,製品名:P-530RL),形成含有高分子系抗靜電劑的層。更具體來說,將抗靜電樹脂c在耐熱樹脂層2B的基材2B0a的一面以0.1g/m2的塗佈量作塗佈並乾燥,形成含有高分子系抗靜電劑的層2B1c。賦予由上述所得到的含有高分子系抗靜電劑的層的該二軸延伸PET薄膜的從23℃到120℃為止的熱尺寸變化率為表2-1所記載的結果。 As the antistatic resin c, a PEDOT polythiophene-based resin (product name: P-530RL, manufactured by Nagase Corporation) was used to form a layer containing a polymer-based antistatic agent. More specifically, the antistatic resin c is applied and dried on one surface of the base material 2B0a of the heat resistant resin layer 2B at a coating amount of 0.1 g/m 2 to form a layer 2B1c containing a polymer antistatic agent. The thermal dimensional change rate from 23 ° C to 120 ° C of the biaxially stretched PET film of the layer containing the polymer antistatic agent obtained above was the result shown in Table 2-1.

作為抗靜電樹脂d,使用季銨鹽含有樹脂(大成精細化工公司製,製品名:1SX-1090),形成含有高分子系抗靜電劑的層。更具體來說,將抗靜電樹脂d在耐熱樹脂層2B的基材2B0a的一面以0.4g/m2的塗佈量作塗佈並乾燥,形成含有高分子系抗靜電劑的層2B1d。賦予由上述所得到的含有高分子系抗靜電劑的層的該二軸延伸PET薄膜的從23℃到120℃為止的熱尺寸變化率為表2-1所記載的結果。 As the antistatic resin d, a quaternary ammonium salt-containing resin (manufactured by Daisei Fine Chemical Co., Ltd., product name: 1SX-1090) was used to form a layer containing a polymer-based antistatic agent. More specifically, the antistatic resin d is applied and dried on one surface of the base material 2B0a of the heat resistant resin layer 2B at a coating amount of 0.4 g/m 2 to form a layer 2B1d containing a polymer antistatic agent. The thermal dimensional change rate from 23 ° C to 120 ° C of the biaxially stretched PET film of the layer containing the polymer antistatic agent obtained above was the result shown in Table 2-1.

作為抗靜電樹脂e,使用負離子系合成黏土礦物含有聚酯系樹脂(高松油脂公司製,製品名:ASA-2050), 形成含有高分子系抗靜電劑的層。更具體來說,將抗靜電樹脂e在耐熱樹脂層2B的基材2B0a等的一面以0.4g/m2的塗佈量作塗佈並乾燥,形成含有高分子系抗靜電劑的層2B1e。使用負離子系合成黏土礦物含有聚酯系樹脂(高松油脂公司製,製品名:ASA-2050),形成含有高分子系抗靜電劑的層。更具體來說,將抗靜電樹脂e在耐熱樹脂層2B的基材2B0a的一面以0.4g/m2的塗佈量作塗佈並乾燥,形成含有高分子系抗靜電劑的層2B1e。賦予由上述所得到的含有高分子系抗靜電劑的層的該二軸延伸PET薄膜的從23℃到120℃為止的熱尺寸變化率、水接觸角角的試驗項目及評價如表2-1所示。 As the antistatic resin e, an anion-based synthetic clay mineral is used, and a polyester-based resin (product name: ASA-2050, manufactured by Takamatsu Oil Co., Ltd.) is used to form a layer containing a polymer-based antistatic agent. More specifically, the antistatic resin e is applied and dried on one surface of the base material 2B0a of the heat resistant resin layer 2B at a coating amount of 0.4 g/m 2 to form a layer 2B1e containing a polymer antistatic agent. The negative ion-based synthetic clay mineral contains a polyester resin (product name: ASA-2050, manufactured by Takamatsu Oil Co., Ltd.) to form a layer containing a polymer-based antistatic agent. More specifically, the antistatic resin e is applied and dried on one surface of the base material 2B0a of the heat resistant resin layer 2B at a coating amount of 0.4 g/m 2 to form a layer 2B1e containing a polymer antistatic agent. Test items and evaluations of the thermal dimensional change rate and water contact angle from 23 ° C to 120 ° C of the biaxially stretched PET film of the polymer antistatic agent-containing layer obtained as described above are shown in Table 2-1. Shown.

任何實施例都是離型性、成形品的外觀、金屬模追隨性、及灰附著試驗的所有試驗項目良好,且在性能面取得平衡的製程用離型薄膜。 Any of the examples is a release film for a process which is excellent in release property, appearance of a molded article, followability of a metal mold, and all test items of a ash adhesion test, and which is balanced in performance.

此外,表2-1所記的各薄膜的詳細,如以下所述。 In addition, the details of each film described in Table 2-1 are as follows.

(2Aa)無延伸4MP-1(TPX)薄膜 (2Aa) No extension 4MP-1 (TPX) film

使用三井化學股份有限公司製4-甲基-1-戊烯共聚合樹脂(製品名:TPX,品牌名:MX022)」,形成厚度15μm的無延伸薄膜。(熔點:229℃,結晶熔解熱量:21.7J/g) A 4-methyl-1-pentene copolymer resin (product name: TPX, brand name: MX022) manufactured by Mitsui Chemicals, Inc. was used to form a non-stretched film having a thickness of 15 μm. (Melting point: 229 ° C, heat of crystal melting: 21.7 J/g)

(2Ab)無延伸4MP-1(TPX)薄膜 (2Ab) no extension 4MP-1 (TPX) film

使用三井化學股份有限公司製4-甲基-1-戊烯共聚合樹脂(製品名:TPX,品牌名:MX022)」,形成厚度 50μm的無延伸薄膜。(熔點:229℃,結晶熔解熱量:21.7J/g) Forming thickness using 4-methyl-1-pentene copolymer resin (product name: TPX, brand name: MX022) manufactured by Mitsui Chemicals Co., Ltd. 50 μm unstretched film. (Melting point: 229 ° C, heat of crystal melting: 21.7 J/g)

(2B0a)2軸延伸PET薄膜 (2B0a) 2-axis extended PET film

膜厚12μm的二軸延伸PET(聚對苯二甲酸)薄膜(東麗股份有限公司製,製品名:Lumila S10)(熔點:258℃,結晶熔解熱量:39.4J/g) Biaxially stretched PET (polyterpene terephthalate) film having a film thickness of 12 μm (manufactured by Toray Industries, Inc., product name: Lumila S10) (melting point: 258 ° C, heat of crystal melting: 39.4 J/g)

(2B0b)2軸延伸尼龍薄膜 (2B0b) 2-axis extended nylon film

膜厚15μm的二軸延伸尼龍薄膜(KOHJIN Film & Chemicals股份有限公司製,製品名:BONYL RX)(熔點:212℃,結晶熔解熱量:53.1J/g) Biaxially stretched nylon film having a film thickness of 15 μm (manufactured by KOHJIN Film & Chemicals Co., Ltd., product name: BONYL RX) (melting point: 212 ° C, heat of crystal melting: 53.1 J/g)

(B0c)2軸延伸聚丙烯薄膜 (B0c) 2-axis extended polypropylene film

膜厚20μm的二軸延伸聚丙烯薄膜(三井化學東賽璐股份有限公司製,製品名:U-2)(熔點:160℃,結晶熔解熱量:93.3J/g) Biaxially oriented polypropylene film with a film thickness of 20 μm (manufactured by Mitsui Chemicals, Ltd., product name: U-2) (melting point: 160 ° C, heat of crystal melting: 93.3 J/g)

(2B0d)無延伸尼龍薄膜 (2B0d) no stretch nylon film

膜厚20μm的無延伸尼龍薄膜(三菱樹脂股份有限公司製,製品名:Dainamiron C)(熔點220℃,結晶熔解熱量:39.4J/g) Non-stretch nylon film with a film thickness of 20 μm (manufactured by Mitsubishi Plastics Co., Ltd., product name: Dainamiron C) (melting point 220 ° C, heat of crystal melting: 39.4 J/g)

(2B0e)無延伸聚對苯二甲酸薄膜 (2B0e) non-extended polyterephthalic acid film

使用三菱工程塑料股份有限公司製的聚對苯二甲酸樹脂(品牌名:5505S),形成厚度20μm的無延伸薄膜。(熔點:219℃,結晶熔解熱量:48.3J/g) A polyethylene terephthalate resin (brand name: 5505S) manufactured by Mitsubishi Engineering Plastics Co., Ltd. was used to form a non-stretch film having a thickness of 20 μm. (Melting point: 219 ° C, heat of crystal melting: 48.3 J/g)

(2B0f)無延伸聚對苯二甲酸薄膜 (2B0f) non-extended polyterephthalic acid film

使用三菱工程塑料股份有限公司製的聚對苯二甲酸樹 脂(品牌名:5505S),形成厚度50μm的無延伸薄膜。(熔點:219℃,結晶熔解熱量:48.3J/g) Using polyterephthalic acid tree made by Mitsubishi Engineering Plastics Co., Ltd. Fat (brand name: 5505S), forming a non-stretch film having a thickness of 50 μm. (Melting point: 219 ° C, heat of crystal melting: 48.3 J/g)

[參照例2-1~2-3] [Reference Example 2-1~2-3]

除了成為以表2-1所表示的薄膜構成以外,與實施例2-1一樣進行封裝、離型,並評價製程用離型薄膜的特性。 The properties of the release film for the process were evaluated in the same manner as in Example 2-1 except that the film composition shown in Table 2-1 was used.

任何參照例其綜合性能上都止於不及於實施例,特別是附著試驗結果欠佳。再來,外觀除了參照例2-1以外都無法得到良好的結果。 The overall performance of any of the reference examples is not as good as the examples, especially the adhesion test results are not good. Further, the appearance did not give good results except for Reference Example 2-1.

[表3] [table 3]

[實施例2-10~2-17] [Example 2-10~2-17]

以表2-2所表示的組合除了將表2-2記載的各薄膜作為離型層2A及2A’和耐熱樹脂層2B使用以外,與實施例2-1一樣製作製程用離型薄膜,進行封裝、離型,並評價特性。 In the combination shown in Table 2-2, except that each of the films described in Table 2-2 was used as the release layers 2A and 2A' and the heat-resistant resin layer 2B, a release film for a process was produced in the same manner as in Example 2-1. Package, release, and evaluate features.

如圖3所示,將離型薄膜在上模與下模之間以施加20N的張力的狀態配置後,使之真空吸附至上模的分模面。接著,以包覆半導體晶片的方式,在基板上填充封裝樹脂後,將固定於基板的半導體晶片配置於下模,並合模。此時,將成形金屬模的溫度(成形溫度)設為170℃、成形壓力設為10MPa、成形時間設為100秒。接著,如圖3c所示,將半導體晶片以封裝樹脂封裝後,將經樹脂封裝的半導體晶片(半導體封裝體)從離型薄膜離型。結果顯示於表2-2。 As shown in Fig. 3, the release film was placed between the upper mold and the lower mold with a tension of 20 N, and then vacuum-adsorbed to the parting surface of the upper mold. Next, after encapsulating the semiconductor wafer on the substrate, the semiconductor wafer fixed to the substrate is placed in the lower mold and the mold is closed. At this time, the temperature (forming temperature) of the molding die was 170 ° C, the molding pressure was 10 MPa, and the molding time was 100 seconds. Next, as shown in FIG. 3c, after the semiconductor wafer is encapsulated with a sealing resin, the resin-encapsulated semiconductor wafer (semiconductor package) is released from the release film. The results are shown in Table 2-2.

任何實施例儘管都是在170℃的高溫區域的評價,但離型性、成形品的外觀、金屬模追隨性、及灰附著試驗的所有試驗項目良好,且在性能面取得平衡的製程用離型薄膜。特別是實施例2-15到2-17,都是離型性、成形品的外觀、金屬模追隨性、及灰附著試驗結果良好的製程用離型薄膜。 Although any of the examples were evaluated at a high temperature region of 170 ° C, all the test items of the release property, the appearance of the molded article, the mold followability, and the ash adhesion test were good, and the process was balanced in terms of performance. Type film. In particular, Examples 2-15 to 2-17 are release films for process release, mold appearance, mold followability, and ash adhesion test results.

[參照例2-4~2-9] [Reference Example 2-4~2-9]

除了成為以表2-2所表示的薄膜構成以外,與實施例 2-10到2-17一樣,製作製程用離型薄膜,進行封裝、離型,並評價特性。結果顯示於表2-2。 Except for the film configuration shown in Table 2-2, and examples As in 2-10 to 2-17, a release film for the process was produced, packaged, released, and evaluated. The results are shown in Table 2-2.

任何參照例其綜合性能上都止於不及於各實施例,特別是成形品的外觀及灰附著試驗兩者都無法得到良好的結果。 The comprehensive performance of any of the reference examples was not as good as that of the respective examples, and in particular, both the appearance of the molded article and the ash adhesion test failed to give good results.

此外,表2-2所記載的各薄膜的詳細,與表2-1所記載的各薄膜的上述所說明者相同。 The details of the respective films described in Table 2-2 are the same as those described above for each film described in Table 2-1.

僅於表2-2所記載的耐熱樹脂層的基材2B0g、及2B0h的詳細,如以下。 The details of the base materials 2B0g and 2B0h of the heat resistant resin layer described in Table 2-2 are as follows.

(2B0g)2軸延伸尼龍薄膜 (2B0g) 2-axis extended nylon film

膜厚15μm的二軸延伸尼龍薄膜(出光Unitech股份有限公司製,製品名:UNILON S330)(熔點:221℃,結晶熔解熱量:60.3J/g) Biaxially stretched nylon film with a film thickness of 15 μm (manufactured by Shinko Co., Ltd., product name: UNILON S330) (melting point: 221 ° C, heat of crystal melting: 60.3 J/g)

(2B0h)2軸延伸PET薄膜 (2B0h) 2-axis extended PET film

使用膜厚25μm的2軸延伸PET薄膜(teijinfilmsolutions股份有限公司製,製品名:FT3PE)(熔點:214℃,結晶熔解熱量:40.3J/g) A 2-axis extended PET film (manufactured by Teijinfilmsolutions Co., Ltd., product name: FT3PE) having a film thickness of 25 μm (melting point: 214 ° C, heat of crystal melting: 40.3 J/g) was used.

[表4] [Table 4]

[產業上的利用可能性] [Industry use possibility]

本案第1發明的製程用離型薄膜,因為兼備先前技術所未能實現的高等級的離型性、皺折的抑制、及金屬模追隨性,使用該製程用離型薄膜,能夠使將半導體晶片等樹脂封裝等所得到的成形品更容易地離型,同時能夠以高生產性地製造沒有皺折或缺陷等外觀不良的成形品,帶來在實用上具有高價值的技術效果,從半導體製程產業到產業的各領域,都有高利用可能性。 In the release film for process of the first aspect of the present invention, since the high-grade release property, wrinkle suppression, and metal mold followability which were not achieved by the prior art are used, the release film can be used to form the semiconductor. A molded article obtained by a resin package such as a wafer can be easily released, and a molded article having no appearance defects such as wrinkles or defects can be produced with high productivity, and a practically high-value technical effect can be obtained from the semiconductor. From the process industry to the various fields of the industry, there is a high possibility of utilization.

此外,本案第1發明的製程用離型薄膜,因為不限於半導體封裝體,也能使用於纖維強化塑膠成形製程、塑膠透鏡成形製程等各種金屬模成形,在半導體產業以外的進行金屬模成形的產業的各領域中,也有高利用可能性。 In addition, the release film for the process of the first aspect of the present invention can be used for forming a metal mold other than the semiconductor industry, because it is not limited to the semiconductor package, and can be used for forming various metal molds such as a fiber-reinforced plastic molding process and a plastic lens molding process. There are also high utilization possibilities in various fields of the industry.

本案第2發明的製程用離型薄膜,因為兼備先前技術所未能實現的高等級的離型性、皺折的抑制、及金屬模追隨性,使用該製程用離型薄膜,能夠使將半導體晶片等樹脂封裝等所得到的成形品更容易地離型,同時能夠以高生產性地製造沒有皺折或缺陷等外觀不良的成形品,帶來在實用上具有高價值的技術效果,從半導體製程產業到產業的各領域,都有高利用可能性。 In the release film for process of the second aspect of the present invention, since the high-level release property, wrinkle suppression, and metal mold followability which have not been achieved by the prior art are used, the release film can be used to form the semiconductor. A molded article obtained by a resin package such as a wafer can be easily released, and a molded article having no appearance defects such as wrinkles or defects can be produced with high productivity, and a practically high-value technical effect can be obtained from the semiconductor. From the process industry to the various fields of the industry, there is a high possibility of utilization.

此外,本案第2發明的製程用離型薄膜,因為不限於半導體封裝體,也能使用於纖維強化塑膠成形製程、塑膠透鏡成形製程等各種金屬模成形,在半導體產業以外的進行金屬模成形的產業的各領域中,也有高利用可能性。 In addition, the release film for the process of the second aspect of the invention can be molded into various metal molds such as a fiber-reinforced plastic molding process and a plastic lens molding process, and can be molded into a metal mold other than the semiconductor industry. There are also high utilization possibilities in various fields of the industry.

10‧‧‧離型薄膜 10‧‧‧ release film

12‧‧‧耐熱樹脂層1B、2B 12‧‧‧Heat Resin Layer 1B, 2B

14‧‧‧黏接層 14‧‧‧Adhesive layer

16‧‧‧離型層1A、2A 16‧‧‧ Release layer 1A, 2A

Claims (46)

一種製程用離型薄膜,係包含離型層1A、耐熱樹脂層1B的層積薄膜,其中,前述離型層1A相對於水的接觸角為90°到130°;前述層積薄膜的在120℃的拉伸彈性率為75MPa到500MPa。 A release film for a process comprising a release film of a release layer 1A and a heat resistant resin layer 1B, wherein a contact angle of the release layer 1A with respect to water is 90° to 130°; The tensile modulus at °C is from 75 MPa to 500 MPa. 如請求項1所記載的製程用離型薄膜,其中,前述層積薄膜的橫(TD)方向的從23℃到120℃為止的熱尺寸變化率在3%以下。 The release film for a process according to claim 1, wherein the thermal film dimensional change ratio of the laminated film in the transverse (TD) direction from 23 ° C to 120 ° C is 3% or less. 如請求項1或2所記載的製程用離型薄膜,其中,前述層積薄膜的橫(TD)方向的從23℃到120℃為止的熱尺寸變化率,與縱(MD)方向的從23℃到120℃為止的熱尺寸變化率的和在6%以下。 The release film for a process according to claim 1 or 2, wherein the laminate film has a thermal dimensional change ratio from 23 ° C to 120 ° C in the transverse (TD) direction and 23 from the vertical (MD) direction. The sum of the thermal dimensional change rates from ° C to 120 ° C is 6% or less. 一種製程用離型薄膜,係包含離型層1A、耐熱樹脂層1B的層積薄膜,其中,前述離型層1A相對於水的接觸角為90°到130°;前述層積薄膜的在170℃的拉伸彈性率為75MPa到500MPa。 A release film for a process comprising a release film of a release layer 1A and a heat resistant resin layer 1B, wherein a contact angle of the release layer 1A with respect to water is 90° to 130°; The tensile modulus at °C is from 75 MPa to 500 MPa. 如請求項4所記載的製程用離型薄膜,其中,前述層積薄膜的橫(TD)方向的從23℃到170℃為止的熱尺寸變化率在4%以下。 The release film for a process according to claim 4, wherein a thermal dimensional change ratio of the laminated film in the transverse (TD) direction from 23 ° C to 170 ° C is 4% or less. 如請求項4或5所記載的製程用離型薄膜,其中,前述層積薄膜的橫(TD)方向的從23℃到170℃為止的熱尺寸變化率,與縱(MD)方向的從23℃到170℃ 為止的熱尺寸變化率的和在7%以下。 The process release film according to claim 4, wherein the laminate film has a thermal dimensional change ratio from 23 ° C to 170 ° C in the transverse (TD) direction and 23 from the vertical (MD) direction. °C to 170°C The sum of the thermal dimensional change rates up to 7% or less. 如請求項1~6中任1項所記載的製程用離型薄膜,其中,前述耐熱樹脂層1B的橫(TD)方向的從23℃到120℃為止的熱尺寸變化率在3%以下。 The release film for a process according to any one of claims 1 to 6, wherein the heat-resistant resin layer 1B has a thermal dimensional change ratio from 23 ° C to 120 ° C in the transverse (TD) direction of 3% or less. 如請求項7所記載的製程用離型薄膜,其中,前述耐熱樹脂層1B的橫(TD)方向的從23℃到120℃為止的熱尺寸變化率,與縱(MD)方向的從23℃到120℃為止的熱尺寸變化率的和在6%以下。 The release film for a process according to claim 7, wherein the heat-resistant resin layer 1B has a thermal dimensional change ratio from 23 ° C to 120 ° C in the transverse (TD) direction and 23 ° C in the vertical (MD) direction. The sum of the thermal dimensional change rates up to 120 ° C is 6% or less. 如請求項1~6中任1項所記載的製程用離型薄膜,其中,前述耐熱樹脂層1B的橫(TD)方向的從23℃到170℃為止的熱尺寸變化率在3%以下。 The process release film according to any one of claims 1 to 6, wherein the heat-resistant resin layer 1B has a thermal dimensional change ratio from 23 ° C to 170 ° C in the transverse (TD) direction of 3% or less. 如請求項9所記載的製程用離型薄膜,其中,前述耐熱樹脂層1B的橫(TD)方向的從23℃到170℃為止的熱尺寸變化率,與縱(MD)方向的從23℃到170℃為止的熱尺寸變化率的和在5%以下。 The release film for a process according to claim 9, wherein the heat-resistant resin layer 1B has a thermal dimensional change ratio from 23 ° C to 170 ° C in the transverse (TD) direction and 23 ° C in the vertical (MD) direction. The sum of the thermal dimensional change rates up to 170 ° C is 5% or less. 如請求項1~10中任1項所記載的製程用離型薄膜,其中,前述離型層1A包含從:氟樹脂、4-甲基-1-戊烯(共)聚合物、及聚苯乙烯系樹脂所構成的群中選出的樹脂。 The release film for a process according to any one of claims 1 to 10, wherein the release layer 1A comprises: a fluororesin, a 4-methyl-1-pentene (co)polymer, and a polyphenylene A resin selected from the group consisting of ethylene resins. 如請求項1~11中任1項所記載的製程用離型薄膜,其中,前述耐熱樹脂層1B包含延伸薄膜。 The process release film according to any one of claims 1 to 11, wherein the heat resistant resin layer 1B comprises a stretched film. 如請求項12所記載的製程用離型薄膜,其中,前述延伸薄膜係從:延伸聚酯纖維薄膜、延伸聚醯胺薄膜、及延伸聚丙烯薄膜所構成的群中選出。 The release film for a process according to claim 12, wherein the stretched film is selected from the group consisting of an extended polyester fiber film, a stretched polyamide film, and an extended polypropylene film. 如請求項1~13中任1項所記載的製程用離型薄膜,其中,前述耐熱樹脂層1B的以JISK7221為準並藉由示差掃描熱量測定(DSC)所測定的第1次昇溫工程中的結晶熔解熱量為20J/g以上且100J/g以下。 The release film for a process according to any one of claims 1 to 13, wherein the heat-resistant resin layer 1B is in the first temperature-increasing process measured by differential scanning calorimetry (DSC) based on JIS K7221 The heat of crystal melting is 20 J/g or more and 100 J/g or less. 如請求項1~14中任1項所記載的製程用離型薄膜,其中,前述層積薄膜更具有離型層1A’,而且,以該離型層1A、前述耐熱樹脂層1B、前述離型層1A’的順序含有;該離型層1A’相對於水的接觸角為90°到130°。 The release film for a process according to any one of claims 1 to 14, wherein the laminated film further has a release layer 1A', and the release layer 1A, the heat resistant resin layer 1B, and the foregoing The order of the type layer 1A' is contained; the contact angle of the release layer 1A' with respect to water is from 90 to 130. 如請求項15所記載的製程用離型薄膜,其中,前述離型層1A及前述離型層1A’的至少一者,包含從:氟樹脂、4-甲基-1-戊烯(共)聚合物、及聚苯乙烯系樹脂所構成的群中選出的樹脂。 The release film for a process according to claim 15, wherein at least one of the release layer 1A and the release layer 1A' comprises: a fluororesin, a 4-methyl-1-pentene (total) A resin selected from the group consisting of a polymer and a polystyrene resin. 如請求項1~16中任1項所記載的製程用離型薄膜,係用於熱固性樹脂所致的封裝製程。 The release film for a process according to any one of claims 1 to 16, which is used for a packaging process by a thermosetting resin. 如請求項1~17中任1項所記載的製程用離型薄膜,係用於半導體封裝製程。 The release film for a process according to any one of claims 1 to 17, which is used for a semiconductor packaging process. 如請求項1~17中任1項所記載的製程用離型薄膜,係用於纖維強化塑膠成形製程、或塑膠透鏡成形製程。 The process release film according to any one of claims 1 to 17, which is used for a fiber reinforced plastic molding process or a plastic lens forming process. 一種樹脂封裝半導體的製造方法,具有:在成形金屬模內的預定位置,配置經樹脂封裝的半導體裝置的工程;在前述成形金屬模內面,將如請求項1~16中任1項 所記載的半導體封裝製程用離型薄膜,以使前述離型層1A與前述半導體裝置對向的方式配置的工程;將前述成形金屬模合模後,在前述半導體裝置與前述半導體封裝製程用離型薄膜之間,將封裝樹脂注入成形的工程。 A method of manufacturing a resin-encapsulated semiconductor, comprising: arranging a resin-encapsulated semiconductor device at a predetermined position in a molding die; and forming an inner surface of the molding die as in any one of claims 1 to 16 The release film for a semiconductor package process is disposed such that the release layer 1A faces the semiconductor device; after the mold is molded, the semiconductor device and the semiconductor package process are separated Between the types of films, the encapsulation resin is injected into the forming process. 一種樹脂封裝半導體的製造方法,具有:在成形金屬模內的預定位置,配置經樹脂封裝的半導體裝置的工程;在前述成形金屬模內面,將如請求項15或16所記載的半導體封裝製程用離型薄膜,以使前述離型層1A’與前述半導體裝置對向的方式配置的工程;將前述成形金屬模合模後,在前述半導體裝置與前述半導體封裝製程用離型薄膜之間,將封裝樹脂注入成形的工程。 A method of manufacturing a resin-encapsulated semiconductor, comprising: arranging a resin-encapsulated semiconductor device at a predetermined position in a molding die; and forming a semiconductor package process as described in claim 15 or 16 on the inner surface of the molding die a process of disposing the release layer 1A' opposite to the semiconductor device by using a release film; and after molding the mold, and between the semiconductor device and the release film for the semiconductor package process, The encapsulating resin is injected into the forming process. 一種製程用離型薄膜,係包含離型層2A、耐熱樹脂層2B的層積薄膜,其中,前述離型層2A相對於水的接觸角為90°到130°;前述耐熱樹脂層2B包含含有高分子系抗靜電劑的層2B1;前述層積薄膜的在120℃的拉伸彈性率為75MPa到500MPa。 A release film for a process comprising a release film 2A and a heat resistant resin layer 2B, wherein the release layer 2A has a contact angle with respect to water of 90° to 130°; and the heat resistant resin layer 2B contains The layer 2B1 of the polymer antistatic agent; the tensile modulus of the laminated film at 120 ° C is 75 MPa to 500 MPa. 如請求項22所記載的製程用離型薄膜,其中,前述層積薄膜的橫(TD)方向的從23℃到120℃為止的熱尺寸變化率在3%以下。 The release film for a process according to claim 22, wherein a thermal dimensional change ratio of the laminated film in the transverse (TD) direction from 23 ° C to 120 ° C is 3% or less. 如請求項22或23所記載的製程用離型薄膜,其中,前述層積薄膜的橫(TD)方向的從23℃到120℃為止的熱尺寸變化率,與縱(MD)方向的從23℃到120℃為止的熱尺寸變化率的和在6%以下。 The process release film according to claim 22, wherein the laminate film has a thermal dimensional change ratio from 23 ° C to 120 ° C in the transverse (TD) direction and 23 from the vertical (MD) direction. The sum of the thermal dimensional change rates from ° C to 120 ° C is 6% or less. 一種製程用離型薄膜,係包含離型層2A、耐熱樹脂層2B的層積薄膜,其中,前述離型層2A相對於水的接觸角為90°到130°;前述耐熱樹脂層2B包含含有高分子系抗靜電劑的層2B1;前述層積薄膜的在170℃的拉伸彈性率為75MPa到500MPa。 A release film for a process comprising a release film 2A and a heat resistant resin layer 2B, wherein the release layer 2A has a contact angle with respect to water of 90° to 130°; and the heat resistant resin layer 2B contains The layer 2B1 of the polymer antistatic agent; and the tensile modulus of the laminated film at 170 ° C is 75 MPa to 500 MPa. 如請求項25所記載的製程用離型薄膜,其中,前述層積薄膜的橫(TD)方向的從23℃到170℃為止的熱尺寸變化率在4%以下。 The release film for a process according to claim 25, wherein a thermal dimensional change ratio of the laminated film in the transverse (TD) direction from 23 ° C to 170 ° C is 4% or less. 如請求項25或26所記載的製程用離型薄膜,其中,前述層積薄膜的橫(TD)方向的從23℃到170℃為止的熱尺寸變化率,與縱(MD)方向的從23℃到170℃為止的熱尺寸變化率的和在7%以下。 The process release film according to claim 25, wherein the laminate film has a thermal dimensional change ratio from 23 ° C to 170 ° C in the transverse (TD) direction and 23 from the vertical (MD) direction. The sum of the thermal dimensional change rates from ° C to 170 ° C is 7% or less. 如請求項20~27中任1項所記載的製程用離型薄膜,其中,前述耐熱樹脂層2B包含:含有高分子系抗靜電劑的層2B1、以及含有黏接劑的黏接層2B2。 The process release film according to any one of the preceding claims, wherein the heat resistant resin layer 2B comprises a layer 2B1 containing a polymer antistatic agent and an adhesive layer 2B2 containing a binder. 如請求項22~27中任1項所記載的製程用離型薄膜,其中,前述耐熱樹脂層2B包含:高分子系抗靜電劑、以及含有黏接劑的黏接層2B3。 The release film for a process according to any one of the preceding claims, wherein the heat-resistant resin layer 2B comprises a polymer-based antistatic agent and an adhesive layer 2B3 containing a binder. 如請求項22~29中任1項所記載的製程用離型薄膜,其中,前述耐熱樹脂層2B的橫(TD)方向的從23℃到120℃為止的熱尺寸變化率在3%以下。 The release film for a process according to any one of the preceding claims, wherein the heat-resistant resin layer 2B has a thermal dimensional change ratio from 23 ° C to 120 ° C in the transverse (TD) direction of 3% or less. 如請求項30所記載的製程用離型薄膜,其中,前述耐熱樹脂層2B的橫(TD)方向的從23℃到120℃為止的熱尺寸變化率,與縱(MD)方向的從23℃到120℃為止的熱尺寸變化率的和在6%以下。 The release film for a process according to claim 30, wherein the heat-resistant resin layer 2B has a thermal dimensional change ratio from 23 ° C to 120 ° C in the transverse (TD) direction and 23 ° C in the vertical (MD) direction. The sum of the thermal dimensional change rates up to 120 ° C is 6% or less. 如請求項22~29中任1項所記載的製程用離型薄膜,其中,前述耐熱樹脂層2B的橫(TD)方向的從23℃到170℃為止的熱尺寸變化率在3%以下。 The release film for a process according to any one of the preceding claims, wherein the heat-resistant resin layer 2B has a thermal dimensional change ratio from 23 ° C to 170 ° C in the transverse (TD) direction of 3% or less. 如請求項32所記載的製程用離型薄膜,其中,前述耐熱樹脂層2B的橫(TD)方向的從23℃到170℃為止的熱尺寸變化率,與縱(MD)方向的從23℃到170℃為止的熱尺寸變化率的和在5%以下。 The release film for a process according to claim 32, wherein the heat-resistant resin layer 2B has a thermal dimensional change ratio from 23 ° C to 170 ° C in the transverse (TD) direction and 23 ° C in the vertical (MD) direction. The sum of the thermal dimensional change rates up to 170 ° C is 5% or less. 如請求項22~33中任1項所記載的製程用離型薄膜,其中,前述離型層2A包含從:氟樹脂、4-甲基-1-戊烯(共)聚合物、及聚苯乙烯系樹脂所構成的群中選出的樹脂。 The release film for a process according to any one of claims 1 to 3, wherein the release layer 2A comprises: a fluororesin, a 4-methyl-1-pentene (co)polymer, and a polyphenylene A resin selected from the group consisting of ethylene resins. 如請求項22~34中任1項所記載的製程用離型薄膜,其中,前述耐熱樹脂層2B包含延伸薄膜。 The process release film according to any one of the preceding claims, wherein the heat resistant resin layer 2B comprises a stretched film. 如請求項35所記載的製程用離型薄膜,其中,前述延伸薄膜係從:延伸聚酯纖維薄膜、延伸聚醯胺薄膜、及延伸聚丙烯薄膜所構成的群中選出。 The release film for a process according to claim 35, wherein the stretched film is selected from the group consisting of an extended polyester fiber film, a stretched polyamide film, and an extended polypropylene film. 如請求項22~36中任1項所記載的製程用離型 薄膜,其中,前述耐熱樹脂層2B的以JISK7221為準並藉由示差掃描熱量測定(DSC)所測定的第1次昇溫工程中的結晶熔解熱量為20J/g以上且100J/g以下。 Process release type as described in any one of claims 22 to 36 In the film, the heat of crystal fusion in the first temperature rising process measured by differential scanning calorimetry (DSC) of the heat resistant resin layer 2B is JISK7221, and is 20 J/g or more and 100 J/g or less. 如請求項22~37中任1項所記載的製程用離型薄膜,其中,前述離型層2A的表面固有電阻值為1×1013Ω/□以下。 The process release film according to any one of the preceding claims, wherein the release layer 2A has a surface specific resistance of 1 × 10 13 Ω/□ or less. 如請求項22~38中任1項所記載的製程用離型薄膜,其中,前述層積薄膜更具有離型層2A’,而且,以該離型層2A、前述耐熱樹脂層2B、前述離型層2A’的順序含有;該離型層2A’相對於水的接觸角為90°到130°。 The release film for a process according to any one of the preceding claims, wherein the laminated film further has a release layer 2A', and the release layer 2A, the heat resistant resin layer 2B, and the foregoing The order of the type layer 2A' is contained; the contact angle of the release layer 2A' with respect to water is from 90 to 130. 如請求項39所記載的製程用離型薄膜,其中,前述離型層2A及前述離型層2A’的至少一者,包含從:氟樹脂、4-甲基-1-戊烯(共)聚合物、及聚苯乙烯系樹脂所構成的群中選出的樹脂。 The release film for a process according to claim 39, wherein at least one of the release layer 2A and the release layer 2A' comprises: a fluororesin, a 4-methyl-1-pentene (total) A resin selected from the group consisting of a polymer and a polystyrene resin. 如請求項39或40所記載的製程用離型薄膜,其中,前述離型層2A’的表面固有電阻值為1×1013Ω/□以下。 The process release film according to claim 39 or 40, wherein the release layer 2A' has a surface specific resistance of 1 × 10 13 Ω/□ or less. 如請求項22~41中任1項所記載的製程用離型薄膜,係用於熱固性樹脂所致的封裝製程。 The release film for a process according to any one of claims 22 to 41, which is used for a packaging process by a thermosetting resin. 如請求項22~42中任1項所記載的製程用離型薄膜,係用於半導體封裝製程。 The process release film according to any one of claims 22 to 42, which is used in a semiconductor packaging process. 如請求項22~42中任1項所記載的製程用離型薄膜,係用於纖維強化塑膠成形製程、或塑膠透鏡成形製 程。 The release film for process according to any one of claims 22 to 42 is used for a fiber reinforced plastic molding process or a plastic lens molding process. Cheng. 一種樹脂封裝半導體的製造方法,具有:在成形金屬模內的預定位置,配置經樹脂封裝的半導體裝置的工程;在前述成形金屬模內面,將如請求項22~43中任1項所記載的半導體封裝製程用離型薄膜,以使前述離型層2A與前述半導體裝置對向的方式配置的工程;將前述成形金屬模合模後,在前述半導體裝置與前述半導體封裝製程用離型薄膜之間,將封裝樹脂注入成形的工程。 A method of manufacturing a resin-encapsulated semiconductor, comprising: arranging a resin-encapsulated semiconductor device at a predetermined position in a molding die; and forming an inner surface of the molding die as recited in any one of claims 22 to 43 a release film for a semiconductor package process, wherein the release layer 2A is disposed to face the semiconductor device; after the mold is molded, the semiconductor device and the semiconductor package process release film are used In between, the encapsulation resin is injected into the forming process. 一種樹脂封裝半導體的製造方法,具有:在成形金屬模內的預定位置,配置經樹脂封裝的半導體裝置的工程;在前述成形金屬模內面,將如請求項39~41中任1項所記載的半導體封裝製程用離型薄膜,以使前述離型層2A’與前述半導體裝置對向的方式配置的工程;將前述成形金屬模合模後,在前述半導體裝置與前述半導體封裝製程用離型薄膜之間,將封裝樹脂注入成形的工程。 A method of manufacturing a resin-encapsulated semiconductor, comprising: arranging a resin-encapsulated semiconductor device at a predetermined position in a molding die; and forming an inner surface of the molding die as recited in any one of claims 39 to 41; a release film for a semiconductor package process, wherein the release layer 2A' is disposed to face the semiconductor device; after the mold is molded, the semiconductor device and the semiconductor package are removed. The encapsulation resin is injected into the forming process between the films.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110003806A (en) * 2017-11-20 2019-07-12 日东电工株式会社 Strengthening membrane

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