TW201736627A - Method and device for forming a light emitting diode vapor-deposited film with non-magnetic metal mask and high temperature resistance and high magnetic adsorption element having a magnetic adsorption element that is resistant for the high temperature greater than 80 DEG C - Google Patents

Abstract

The present invention provides a light emitting diode vapor-deposited film with high temperature resistant capability, comprising the following steps of: disposing a high temperature resistant magnetic adsorption element in a first accommodation space of the carrier, providing a wafer in a second accommodation space of the carrier, and covering the second accommodation space with a non-magnetic metal mask, wherein the temperature of the high temperature is greater than 80 DEG C. This invention also provides a device for forming a high temperature resistant light emitting diode vapor deposition film, which comprises a carrier, a high temperature resistant magnetic adsorption element, a wafer, and a non-magnetic metal mask. The carrier has a first accommodation space and a second accommodation space. The high temperature resistant magnetic adsorption element is disposed in the first accommodation space. The non-magnetic metal mask covers the second accommodation space of the carrier, wherein the temperature of the high temperature is greater than 80 DEGC.

Description

Method and device for forming high temperature resistant LED emitting film pattern

The invention aims to provide a method and a device for forming a high-temperature resistant LED distillation film pattern which can greatly reduce the manufacturing cost and facilitate the mass production of the product, and is particularly suitable for application to a light-emitting diode electrode or the like. The manufacturer of the structure.

Light-emitting diodes are widely used in household appliances, such as indicator lights, backlights for mobile phones, traffic signs, advertising billboards, and third-hand lights for automobiles, because of their low power consumption and small size. In the general method of manufacturing a light-emitting diode, first, a III-V compound wafer is fabricated, and then a metal electrode is formed on the III-V compound wafer, and then cut to form a light-emitting diode crystal grain, and finally, a packaging operation is completed. The production of light-emitting diodes.

The conventional method for fabricating a light-emitting diode metal electrode can be roughly divided into two types. The first method is to apply a metal film on the surface of the III-V compound wafer, and then form a patterned photoresist by using a photolithography technique. Layer, and using the patterned photoresist layer as a mask to etch the metal film to complete the fabrication of the metal electrode; another method is to apply a layer of photoresist on the III-V compound wafer and perform lithography imaging. A metal film is plated, and then a photoresist floating process is performed to form a metal electrode for metal imaging.

However, all of the above methods need to be completed by using a photolithography process. The fabrication of the electrodes, but the lithography process is rather cumbersome and complicated, and has a high degree of difficulty in fabrication.

Furthermore, in order to improve the disadvantages of the above process, the magnetic adsorption element used in the magnetic adsorption element has a magnetic decay and deterioration when the operating temperature is higher than 80 ° C, resulting in a problem that the non-magnetic metal mask cannot be closely adsorbed.

Therefore, how to propose a process that can be reduced, facilitates manufacturing, greatly reduces manufacturing costs, and is suitable for a high-temperature working environment, and the desired electrode of the produced light-emitting diode is the intention of the present invention.

In view of the above problems, the present invention provides a method for forming a high temperature resistant LED distillation film pattern, comprising the steps of: providing a high temperature resistant magnetic adsorption element in a first housing space of the carrier, and disposing the wafer on the carrier The second accommodating space of the carrier is covered in the second accommodating space and covered by a non-magnetic metal mask, wherein the temperature of the high temperature is greater than 80 ° C. The invention further provides a device for forming a high temperature resistant LED distillation film pattern, comprising a carrier, a high temperature magnetic adsorption element, a wafer and a non-magnetic metal mask. The carrier has a first accommodating space and a second accommodating space. The high temperature resistant magnetic adsorption element is disposed in the first accommodating space. The wafer is disposed in the second accommodating space of the carrier. The non-magnetic metal cover covers the second accommodating space of the carrier, wherein the temperature of the high temperature is greater than 80 ° C.

In view of the above, the present invention discloses a cumbersome and complicated defect in improving the conventional lithography etching process, and provides a high-temperature illuminating process with reduced process, low cost, high temperature resistance (high temperature resistance), and convenient mass production of the wafer electrode. Diode vaporized film Method and apparatus for pattern formation.

10‧‧‧ Vehicles

12, 12‧‧‧ accommodating space

13‧‧‧Positioning holes

20‧‧‧High temperature magnetic adsorption element

30‧‧‧Non-magnetic metal mask

40‧‧‧ wafer

50‧‧ ‧Flap

51‧‧‧Positioning column

52‧‧‧ binding column

60‧‧‧Decanted turntable

61‧‧‧ point evaporation source

1A and 1B are an exploded perspective view and a side view of a device for forming a high temperature resistant LED emitting film pattern according to the present invention; Fig. 2 is a view showing a state of use of the vapor deposition of the present invention; And Fig. 3B is a comparison chart of the decay rate of the high temperature magnetic adsorption element compared with the general magnet baking accumulation time; and Fig. 4 is a characteristic diagram of the NdFeB magnet material of the high temperature magnetic adsorption element in various operating temperature ranges. .

Please refer to FIG. 1A and FIG. 1B, which are exploded perspective views and side views of the apparatus for forming a high temperature resistant LED discharge film pattern of the present invention. The invention provides a device for forming a high temperature resistant LED distillation film pattern, comprising a carrier 10, a high temperature resistant magnetic adsorption component 20, a non-magnetic metal mask 30 and a wafer 40. The carrier 10 has a first accommodating space 11 and a second accommodating space 12 . The high temperature resistant magnetic adsorption element 20 is disposed in the first accommodating space 11 . The wafer 40 is disposed in the second accommodating space 12 of the carrier 10 . The non-magnetic metal mask 30 covers the second accommodating space of the carrier 10, wherein the temperature of the high temperature is greater than 80 ° C.

The carrier 10 can be any shape such as a circle, a square or a triangle, and a frame of an appropriate length is extended on the periphery of the carrier 10 so that the upper and lower sides of the carrier 10 form an accommodation space 11 and 12, And there are several fixed settings on the side of the carrier 10 side. Bit hole 13.

The high temperature resistant magnetic adsorption element 20 is designed to match the outer shape of the carrier 10 so as to be disposed in the accommodating space 11 below the carrier 10. The non-magnetic metal mask 30 includes a non-magnetic metal foil, wherein the non-magnetic metal mask 30 has a thickness of 10 μm to 100 μm, which is provided in cooperation with the outer shape of the carrier 10. In addition, the non-magnetic metal foil is provided with the desired porous geometry. The wafer 40 is disposed in the accommodating space 12 above the carrier 10 . The blocking piece 50 corresponds to one side of the carrier 10 at which the positioning hole 13 is disposed, at least one positioning post 51 is protruded, and the coupling post 52 is disposed at the center of the other side.

As described above, in actual manufacturing, the high-temperature magnetic adsorption element 20 is placed on the baffle 50 where the positioning post 51 is disposed, and the side of the carrier 10 provided with the positioning hole 13 faces downward and is buckled with the positioning post 51. The high temperature magnetic adsorption element 20 is placed in the accommodating space 11 below the carrier 10. In addition, the wafer 40 is placed in the accommodating space 12 above the carrier 10, and finally the non-definition pattern is provided. The magnetic metal mask 30 is placed on the surface of the wafer 40, so that the non-magnetic metal mask 30 completely covers the wafer 40. At this time, the non-magnetic metal mask 30 is adsorbed by the magnetic force of the lower-temperature resistant magnetic adsorption element 20, and the wafer 40 is Then, it is sandwiched and fixed by the non-magnetic metal mask 30 and the high temperature resistant magnetic adsorption element 20, so that the stopper 50 is evaporated, and the desired electrode is directly formed on the wafer 40.

Please refer to Fig. 2, which is a view showing the state of use of the vapor deposition of the present invention. The vapor deposition turntable 60 includes a spherical surface portion and is disposed opposite to the point evaporation source 61 by a predetermined distance. Furthermore, the binding post 52 provided at the bottom of the flap 50 is used to bond the plurality of flaps 50 to the spherical surface of the vapor deposition dial 60 such that the wafer 40 on each of the flaps 50 is nearly perpendicular to the point evaporation source 61. Angle to make the pattern shift intact and reduce the pattern perimeter film The thickness is reduced, and the wafer 40 is imaged for convenience.

Please refer to FIGS. 3A and 3B, which are graphs comparing the decay rates of the high temperature magnetic adsorption elements compared to the general magnet baking accumulation time. In the present invention, the high temperature resistant magnetic adsorption element 20 includes a high temperature resistant magnet, which means a magnet capable of withstanding an ambient temperature of 80 ° C or higher. It should be noted that the baking temperature tested in FIG. 3A is 100 ° C as the test temperature, but is not limited thereto in the present invention. In contrast, after the same baking time and the same ambient temperature, the magnitude of the magnetic decay of the general magnet is far greater than the degree of degradation of the high temperature resistant magnetic adsorption element 20, which may affect the adsorption of the non-magnetic metal mask 30. The degree of closeness.

In the present invention, the high temperature resistant magnetic adsorption element 20 includes a neodymium iron boron magnet, a samarium cobalt magnet, and an alnico magnet, which are not limited thereto. Depending on the operating temperature range, the user can select high temperature magnetic adsorption elements of different materials. Please refer to Fig. 4, which is a characteristic diagram of the NdFeB magnet material in various operating temperature ranges of the high temperature resistant magnetic adsorption element. For example, between 80 ° C and 240 ° C operating temperature, different types of neodymium iron boron magnets can be selected according to Figure 4, including M type, H type, SH type, UH type, EH type and AH type. In addition, according to other experimental results, between the operating temperatures of 240 ° C to 350 ° C, different ratios of samarium cobalt magnets can be selected, for example, between 240 ° C and 250 ° C operating temperature, a 1:5 ratio of 钐 can be selected For cobalt magnets, a 2:17 ratio of samarium cobalt magnets can be used between 250 ° C and 350 ° C operating temperature. Aluminium-nickel-cobalt magnets are available for operation temperatures greater than 350 °C. It should be noted that the above defined operating temperature range is not a certain standard, but is a reference for the user's choice.

In addition, the present invention further provides a method for forming a high temperature resistant LED distillation film pattern, comprising the steps of: providing a high temperature resistant magnetic adsorption element 20 in the first housing space 11 of the carrier 10, and disposing the wafer 40 The second accommodating space 12 of the carrier 10 is covered by the second accommodating space 12 of the carrier 10 and the non-magnetic metal mask 30, wherein the temperature of the high temperature is greater than 80 ° C.

As described above, the above method further includes the step of covering the first accommodating space 11 of the carrier 10 with a shutter 50.

Furthermore, the method for forming the high temperature resistant LED vapor film pattern further comprises the step of selecting the high temperature magnetic adsorption element of different materials according to different operating temperature ranges. Further, the step includes selecting a high temperature magnetic adsorption element resistant to different types of neodymium iron boron magnets between operating temperatures of 80 ° C to 240 ° C; selecting different mixing ratios between 240 ° C and 350 ° C operating temperatures The high temperature magnetic adsorption element of the samarium cobalt magnet; the high temperature magnetic adsorption element of the alnico magnet is selected at an operating temperature of more than 350 °C. The rest of the same principles and structures are as described above, and will not be described again here.

It can be seen from the above that the manufacturing method and the device produced by the invention have the following practical advantages: 1. The wafer electrode is required to be replaced by a cumbersome and difficult technique, and the wafer electrode is fabricated in a streamlined process. Therefore, the production cost can be greatly reduced. 2. The use of the carrier, the magnetic adsorption element and the non-magnetic metal mask of the present invention enables the fabrication of the wafer electrode to be easily mass-produced. 3. Select a very thin non-magnetic metal mask and pass the adsorption of the magnetic adsorption element so that the non-magnetic metal mask is closely attached to the wafer, and each wafer has a nearly vertical angle. Opposite to the evaporation source metal, the pattern on the non-magnetic metal mask is completely transferred while reducing the film thickness reduction around the pattern. 4. The high temperature resistant magnetic adsorption element with different material properties can be further adapted to the high temperature working environment according to different working temperatures.

In summary, the present invention discloses a cumbersome and complicated defect in improving the conventional lithography etching process, and provides a high-temperature illuminating process with reduced process, low cost, high temperature resistance (high temperature resistance), and convenient mass production of the wafer electrode. The method and device for forming a diode vapor film pattern have novelty and industrial use value, and the invention patent application is filed according to law.

10‧‧‧ Vehicles

11, 12‧‧‧ accommodating space

20‧‧‧High temperature magnetic adsorption element

30‧‧‧Non-magnetic metal mask

40‧‧‧ wafer

50‧‧ ‧Flap

51‧‧‧Positioning column

52‧‧‧ binding column

Claims (16)

A method for forming a high temperature resistant LED distillation film pattern, comprising the steps of: disposing a high temperature magnetic adsorption element in a first accommodating space of a carrier; and disposing a wafer on one of the carriers The second accommodating space is covered by the second accommodating space; and the second accommodating space of the carrier is covered by a non-magnetic metal mask; wherein the temperature of the high temperature is greater than 80 ° C. The method for forming a high temperature resistant LED flash film pattern according to claim 1, further comprising the step of covering the first accommodating space with a baffle. The method for forming a high-temperature resistant LED evaporation film pattern according to claim 1, further comprising the step of selecting the high temperature magnetic adsorption element of different materials according to different operating temperature ranges. The method for forming a high temperature resistant LED flash film pattern according to claim 3, wherein the step comprises selecting between different operating temperatures of the temperature range of 80 ° C to 240 ° C to select different types of neodymium iron boron magnets. High temperature magnetic adsorption element. The method for forming a high temperature resistant LED distillation film pattern according to claim 3, wherein the step comprises selecting a resistance ratio of the samarium cobalt magnet of different mixing ratios between 240 ° C and 350 ° C operating temperature. High temperature magnetic adsorption element. The method for forming a high temperature resistant LED flash film pattern according to claim 3, wherein the step comprises selecting a high temperature magnetic adsorption element of the alnico magnet at an operating temperature greater than 350 °C. The device for forming a high-temperature-resistant LED flashing film pattern comprises: a carrier having a first accommodating space and a second accommodating space; and a high-temperature magnetic adsorption component disposed on the first accommodating a space in which the wafer is disposed in the second accommodating space of the carrier; and a non-magnetic metal mask covering the second accommodating space of the carrier; wherein the temperature of the high temperature is greater than 80 Above °C. The device for forming a high temperature resistant LED flash film pattern according to claim 7, wherein the non-magnetic metal mask has a porous geometric pattern. The device for forming a high temperature resistant LED flash film pattern according to claim 7, wherein the nonmagnetic metal mask has a thickness of between 10 μm and 100 μm. The apparatus for forming a high-temperature-resistant LED flash film pattern according to the seventh aspect of the invention, wherein a plurality of positioning holes are disposed on a periphery of the first accommodating space of the carrier. The device for forming a high temperature resistant LED flash film pattern according to claim 10, further comprising a baffle having a side surface having at least one positioning post combined with the plurality of positioning holes to cover the The first accommodation space. The apparatus for forming a high temperature resistant LED distillation film pattern according to claim 7, wherein the high temperature magnetic adsorption element selects different materials according to different operating temperature ranges. The apparatus for forming a high-temperature resistant LED flash film pattern according to claim 12, wherein the high temperature magnetic adsorption element is at 80 ° C to 240 Different types of neodymium iron boron magnets are selected between the operating temperatures of °C. The apparatus for forming a high-temperature-resistant LED distillation film pattern according to claim 12, wherein the high-temperature magnetic adsorption element is selected from a working temperature of 240 ° C to 350 ° C to select different mixing ratios of samarium cobalt magnet. The apparatus for forming a high temperature resistant LED discharge film pattern according to claim 12, wherein the high temperature magnetic adsorption element is selected from an operating temperature of more than 350 ° C to select an alnico magnet. The apparatus for forming a high-temperature-resistant LED distillation film pattern according to claim 7 further includes an evaporation dial for forming a plurality of high-temperature-resistant LED distillation film patterns. The device is repeatedly mounted on one of the spherical surfaces of the vapor deposition turntable to image the evaporation source metal plating film.