560092 五、發明說明（1) - 發明領域： 本發明係有關一種發光二極體（LED )之金屬電極的 製作技術’特別是關於一種毋需採用光阻餘刻或光阻浮離 (photoresist lift-0ff)技術的發光二極體金屬電極的 製造方法及其製造裝置。 發明背景： 按’發光二極體為一種具有兩個電極端子，在端子間 施加電壓’通入極小的電流，即可發出光亮的光電元件。 由於發光二極體之發光現象不是藉加熱或放電發光，而是 屬於冷性發光，所以元件壽命長、耗電量小、反應速度 快、體積小、適合量產，具有高可靠度，且容易配合應用 上的需f製成極小或陣列式的元件，符合輕薄短小、功能 強、可靠性高的產品趨勢，使得發光二極體的適用範圍 廣。 一般發光二極體之製造方法，係先製作出ΠΙ_ν化合 物晶片之後，再於丨丨〗_ν化合物晶片上製作金屬電極，而 後進行切割以形成發光二極體晶粒，最後進行封裝作業， = ί二極體之製作。習知在發光二極體：金屬電 極的衣作方法，大致分為二種，第一種方法係先在111_ν 勿鑛ΐ 一層金屬膜，接續利用微影姓刻技術 形成一圖案化光阻層，並以該圖案化光阻層 該金屬膜，進而完成金屬電極之製作；另— 虫亥 ΠΗ化合物晶片上先塗佈一層光阻並進行微 = 法二是於560092 V. Description of the invention (1)-Field of the invention: The present invention relates to the manufacturing technology of a metal electrode of a light-emitting diode (LED), especially to a photoresist lift without the use of photoresistance or photoresist lift. -0ff) technology for manufacturing a light-emitting diode metal electrode and a manufacturing apparatus therefor. BACKGROUND OF THE INVENTION: A light-emitting diode is a type of two-electrode terminals. A voltage is applied between the terminals and a very small current is passed to emit a bright photovoltaic element. Since the light-emitting phenomenon of the light-emitting diode is not luminescence by heating or discharge, it belongs to cold light-emitting, so the component has long life, small power consumption, fast response speed, small size, suitable for mass production, high reliability, and easy According to the application needs to make extremely small or array-type components, in line with the trend of light, thin, short, powerful, and reliable products, making the scope of application of light-emitting diodes wide. The general manufacturing method of light-emitting diodes is to make a ΠΙ_ν compound wafer first, then make metal electrodes on the 丨 丨 _ν compound wafer, and then cut to form light-emitting diode grains, and finally perform packaging operations, = ί Production of Diodes. Known in the light-emitting diode: the method of dressing metal electrodes can be roughly divided into two types. The first method is to first create a metal film on 111_ν Do not mine, and then use the lithography technique to form a patterned photoresist layer. And use the patterned photoresist layer to form the metal film, and then complete the production of metal electrodes; In addition-firstly coat a layer of photoresist on the wafer of insecticide compound and perform micro =
五 發明說明（2) 上一層金屬膜，再 — 一 屬電極之製作。 Τ、’阻浮離製程，使金屬成像完成 不管是以上述何插 利用微影餘刻製程才能f 乍金屬電極’習知技術皆須 輸…，…呈點：製；’但是就微影』 尚之困難度。 貞且禝雜，在製作上並具有較 因此，本發明你+ 并二托挪 、在針對上述之困擾，描山 一極體至屬電極之制、生 提出一種新的發 之缺失者。 坆/及其製造裝置，以克服習知 發明目 本 的製造 浮離微 體之金 本 的製造 可大幅 為 洗劑清 一磁性 同時固 金屬電處理， 的與概述 發明之主 方法及其 影製程的 屬電極。 發明之另 方法及其 降低金屬 達到上述 洗之；然 光罩，使 定住晶片 極；最後 即可完成 要目的係在提供一種發光 製造裝置，其係在不使用 情形下，利用該製造裝置 一目的 製造裝 電極製 之目的 後將晶 載具底 ;接續 在移除 發光二 係在提供一 置，其係具 造成本之優 ，本發明係 片置於一載 部之磁性元 進行金屬蒸 該磁性光罩 極體金屬電 種發光 有製程 點者。 先提供 具中， 件吸附 鍵，在 及載具 極之製 二極體金屬電極 光阻敍刻或光阻 製作出發光二極 二極體金屬電極 簡單、快速，並 蠢晶片，並以清 且於晶片上設有 該磁性光罩，並 晶片上直接形成 之後，進行一熱 作0V. Description of the invention (2) A layer of metal film, and then-a metal electrode. Τ, 'Resistance to float off the process, so that the metal imaging is completed regardless of the above-mentioned interpolation using the lithography process to obtain the first metal electrode' The conventional technology must be lost ..., ... Presentation point: manufacturing; 'but lithography' Still difficult. Chastity and complexity, in terms of production and have more. Therefore, in the present invention, you + and two tortoises, in order to address the above-mentioned problems, describe the formation and development of a polar body and electrode, and propose a new missing person.坆 / and its manufacturing device, to overcome the problem of the conventional invention, the production of floating micro-gold, the production of gold, which can greatly cleanse the lotion, magnetic and solid metal electrical treatment, and outline the main method of the invention and its production process. Of the genus electrode. Another method of the invention and the method of reducing the metal to achieve the above-mentioned washing; then a photomask to hold the wafer pole; finally the main purpose can be achieved is to provide a light-emitting manufacturing device, which is used for the purpose of not using the manufacturing device After the purpose of manufacturing the electrode assembly system, the bottom of the crystal carrier is continued; after the light-emitting second system is removed, a set is provided, which has the advantage of creating a cost. The series of the present invention is placed on a magnetic element of a carrier for metal evaporation. Photomask polar body metal type has process point. First provide the metal, metal, and metal adsorption electrodes and photoresist on the carrier metal electrode to make light-emitting diode metal electrodes. It is simple, fast, and stupid. After the magnetic photomask is set on the wafer and formed directly on the wafer, a thermal operation is performed.
560092 五、發明說明（3) 本 發 明 之 另 一 實 施 態 樣， 係 在 提 供 一 種 發 光 二 極 體 金 屬 電 極 製 造 裝 置 其 係 裝 設在 _ — 反 應 室 中 的 鍍 盤 上 此 製 造 裝 置 包 括 一 用 以 承 載 晶片 之 載 具 並 在 載 具 底 部 設 置 一 磁 性 元 件 ； 另 有 一 磁 性 光罩 設 置 在 晶 片 上 使 磁 性 元 件 吸 附 該 磁 性 光 罩 並 同 時 將該 晶 片 固 定 在 載 具 上 以 作 為 後 續 金 屬 m、 鍍 製 程 之 用 〇 底 下 藉 由 具 體 實 施 例 配合 所 附 的 圖 式 詳 加 說 明 ， 當 更 容 易 瞭 解 本 發 明 之 的 技術 内 容 特 點 及 其 所 達 成 之 功 效 〇 圖 號 說 明 ； 10 製 造 裝 置 12 蒸 鍍 盤 14 載 具 16 容 置 槽 18 晶 片 20 磁 性 元 件 22 磁 性 光 罩 24 接 觸 窗 26 發 金 屬 源 28 金 屬 電 極 詳 細 說 明 ; 本 發 明 係 提 出 缝 種 發 光二 極 體 金 屬 電 極 的 製 造 方 法 及 其 製 造 裝 置 其 係 在 不 使 用光 阻 1虫 刻 或 光 阻 浮 離 微 影 製 程 的 情 形 下 利 用 特 殊 ό又 計 之載 具 配 合 磁 性 元 件 及 磁 性 光 罩 貼 ό又 於 晶 片 表 面 以 直 接進 行 金 屬 鍍 膜 進 而 完 成 金 屬 電極之製作。 第一圖為本發明製作發光二極體金屬電極之流程示意 圖，如圖所示，首先如步驟S10所示，提供磊晶片，並在560092 5. Description of the invention (3) Another embodiment of the present invention is to provide a light-emitting diode metal electrode manufacturing device which is installed on a plating plate in a reaction chamber. The manufacturing device includes a The carrier carrying the wafer is provided with a magnetic element at the bottom of the carrier; another magnetic photomask is disposed on the wafer to make the magnetic element adsorb the magnetic photomask and simultaneously fix the wafer to the carrier as a subsequent metal m-plating process Its application is explained in detail below with specific examples and accompanying drawings, so that it is easier to understand the technical content and features of the present invention and the effect achieved. Drawing number description; 10 Manufacturing equipment 12 Evaporation plate 14 With 16 accommodating slots 18 wafers 20 magnetic elements 22 magnetic masks 24 contact windows 26 hair metal source 28 metal electrode detailed description; the present invention proposes a method for manufacturing a light-emitting diode metal electrode and a manufacturing device thereof, which are used in the case of not using photoresist 1 insect engraving or photoresist floating lithography process A special carrier is used to match the magnetic components and magnetic photomasks on the wafer surface to directly perform metal plating to complete the production of metal electrodes. The first diagram is a schematic diagram of a process for manufacturing a light-emitting diode metal electrode according to the present invention. As shown in the figure, first, as shown in step S10, an epitaxial wafer is provided, and
56〇〇92 i'、發明說明（4) 進行鍍膜前’利用清洗劑進行晶片之清洗，以清除晶片表 =之氧化物、污染物以及金屬離子；且該清洗劑係由硫 又氧水、氨水、填酸及鹽酸等無機藥水的至少其中之 一與水進行配比混合所組成者。 在說明步驟s 1 2之前，先說明本發明所使用之製造裝 置凊同犄芩考第二圖所示，此製造裝置1 〇係裝設在〆反 應至中的洛鍍盤1 2上，且該蒸鍍盤1 2上係同時設置有複數 個製造裝置1 0 (圖中未示），每一製造裝置i 〇係包栝一載 ^14，其係由鋁合金材質所構成者，在載具“上係設有一 容置槽1 6，提供承載一晶片1 8之用；並在該容置槽1 6下方 且位於該載具14底部係設有一磁性元件2〇，其材質通常為 鋁鐵綳磁鐵、釤鈷磁鐵或氧化磁鐵等具磁性物質。 一 *另有磁性光罩2 2，其係為一具有磁性之不錄鋼軟性 薄膜’且厚度係介於丨〇〜3 〇 〇微米之間，較佳者為5 〇微 米’在磁性光罩2 2上則設有複數個接觸窗2 4，以作為形成 金屬電極之用，此磁性光罩22係貼設在該晶片18上，以利 用載具1 4底部之磁性元件2 〇吸附住磁性光罩2 2，進而將晶 片18穩定固定在載具14之容置槽16内而不會輕易脫落。= 外，在反應室中係設有一蒸發金屬源26，其係以近乎垂直 角度（90 )入射至該晶片18上。 然後，如步驟s 1 2所示，將晶片1 8置於上述之載具i 4 中，且於晶片18上設置一磁性光罩22，使載具14底部之磁 性元件20吸附住該磁性光罩22，進而將晶片ι8確實固定在 載具1 4上，使晶片1 8能夠固定在蒸鍍盤1 2上。接著以該磁 560092 五、發明說明（5) 性光罩2 2為罩幕，如步驟g 1 4所示，進行金屬蒸鍍，利用 熱条錢或電子搶蒸鍍方式等濺鍍方式，使未被金屬磁性光 罩2 2覆盍之晶片丨8表面，即接觸窗2 4所在之位置直接形成 f金屬電極28，請同時參考第三圖所示；其中，在此金屬 蒸鍵步驟所使用之金屬係選自金、金鈹、金鍺、金鋅、 鎳、鋅、銀、鈦、鋁、銦及鉑所組成之群組。 完成金屬電極28之步驟後，即可如步驟S16所示將該 磁性光罩22移除，並將晶片18移離該載具14 ;接續進行熱 處理，其係將晶片18置於3〇〇〜1〇〇〇之爐管中靜置5〜5〇 分鐘，使晶片18表面和金屬電極形成歐姆接觸，如此， 可在晶片製作出完整的金屬電極。 由於本發明所使用之蒸 入射至晶片上，故可在晶片 極。而使蒸發金屬源以近乎 了將反應室加長加寬之外， (近乎直線），以便使蒸發 入射至晶片上。 發金屬源係以近乎垂直角度而 形成相當均勻且平整的金屬電 垂直角度入射至晶片之方式除 亦可將蒸鍍盤的彎曲弧度變小 金屬源能夠以近乎垂直之角度 因此，本發明係在不使 程的情形下，利用該製造裝 刻或光阻浮離微影製 極，故具有製程簡單、快速，^ ^出發光二極體之金屬電 成本之優點者，以解決習知：：土 ::降低金屬電極製造 等缺失。 ]用娀影蝕刻製程所存在之該56〇〇92 i ', description of the invention (4) Before coating, the wafer is cleaned with a cleaning agent to remove oxides, pollutants and metal ions from the wafer surface; and the cleaning agent is made of sulfur and oxygen water, At least one of inorganic water such as ammonia water, acid filling, and hydrochloric acid is prepared by mixing and mixing with water. Before explaining step s 12, the manufacturing device used in the present invention will be described. As shown in the second figure, this manufacturing device 10 is installed on the plated plate 12 in which the reaction is performed, and The evaporation plate 12 is provided with a plurality of manufacturing devices 10 (not shown) at the same time, and each manufacturing device i 0 includes a load ^ 14, which is composed of an aluminum alloy material. A receiving slot 16 is provided on the upper part for carrying a wafer 18; and a magnetic element 20 is provided below the receiving slot 16 and at the bottom of the carrier 14, and the material is usually aluminum. Iron rhenium magnets, samarium cobalt magnets, or oxidized magnets have magnetic substances. * A magnetic mask 22 is also used, which is a non-recording steel soft film with magnetic properties, and the thickness is between 丨 0 ~ 300 μm. In between, it is preferably 50 micrometers. On the magnetic mask 22, a plurality of contact windows 24 are provided for forming a metal electrode. The magnetic mask 22 is attached to the wafer 18. In order to use the magnetic element 2 at the bottom of the carrier 14 to adsorb the magnetic photomask 22, the wafer 18 is stably fixed to the carrier 14. The accommodating tank 16 does not fall off easily. = Outside, an evaporation metal source 26 is provided in the reaction chamber, which is incident on the wafer 18 at a nearly vertical angle (90). Then, as in step s 12 As shown, the wafer 18 is placed in the carrier i 4 described above, and a magnetic photomask 22 is provided on the wafer 18 so that the magnetic element 20 at the bottom of the carrier 14 attracts the magnetic photomask 22, and then the wafer 8 is fixed. It is fixed on the carrier 14 so that the wafer 18 can be fixed on the evaporation plate 12. Then the magnetic 560092 is used. V. Description of the invention (5) The photomask 2 2 is used as a mask, as shown in step g 1 4 For metal vapor deposition, use hot-dip or electronic vapor deposition methods to make f metal directly on the surface of the wafer that is not covered by the metal magnetic mask 2 2, that is, where the contact window 24 is. The electrode 28 is also shown in the third figure. Among them, the metal used in the metal vapor bonding step is selected from gold, gold beryllium, gold germanium, gold zinc, nickel, zinc, silver, titanium, aluminum, indium and A group of platinum. After completing the steps of the metal electrode 28, the magnetic mask 22 can be removed as shown in step S16. And move the wafer 18 away from the carrier 14; then continue the heat treatment, which is to place the wafer 18 in a furnace tube of 3000 ~ 1000 for 5 to 50 minutes, so that the surface of the wafer 18 and the metal electrode An ohmic contact is formed. In this way, a complete metal electrode can be fabricated on the wafer. Since the vapor used in the present invention is incident on the wafer, it can be on the wafer electrode. Therefore, the evaporation metal source can be used to almost extend the reaction chamber. (Almost straight line), so that evaporation is incident on the wafer. The source of the hair metal is incident on the wafer at a nearly vertical angle to form a fairly uniform and flat metal electrical perpendicular angle. In addition to reducing the curvature of the evaporation disk, The metal source can be at an almost vertical angle. Therefore, the present invention uses the manufacturing and engraving or photoresist to float away from the lithographic electrode without using a process, so the process is simple and fast, and the light emitting diode can be produced. The advantages of the cost of metal electricity to solve the conventional :: soil :: reduce the lack of metal electrode manufacturing. ] The existence of the shadow etching process
以上所述之實施例僅係為說明 其目的在使熟習此項技藝之人 本啦明之技術思想及特 士能夠瞭解本發明之内The above-mentioned embodiments are merely for the purpose of illustration. The purpose of the present invention is to enable those skilled in the art of Ben Laming to understand the technical ideas and specialties of the present invention.
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第ίο頁 560092 圖式簡單說明 圖式說明： 第一圖為本發明製作發光二極體金屬電極之流程示意圖。 第二圖為本發明於製作發光二極體金屬電極所使用之製造 裝置的構造示意圖。 第三圖為第二圖的局部構造的放大示意圖。Page ίο 560092 Brief description of the drawings Description of the drawings: The first diagram is a schematic diagram of the process of making a light-emitting diode metal electrode according to the present invention. The second figure is a schematic diagram of the structure of a manufacturing device used for manufacturing a light-emitting diode metal electrode according to the present invention. The third figure is an enlarged schematic view of the partial structure of the second figure.