TW201734637A - Positive photosensitive transfer materials and method for producing circuit wiring - Google Patents

Positive photosensitive transfer materials and method for producing circuit wiring Download PDF

Info

Publication number
TW201734637A
TW201734637A TW105142025A TW105142025A TW201734637A TW 201734637 A TW201734637 A TW 201734637A TW 105142025 A TW105142025 A TW 105142025A TW 105142025 A TW105142025 A TW 105142025A TW 201734637 A TW201734637 A TW 201734637A
Authority
TW
Taiwan
Prior art keywords
positive photosensitive
group
pattern
resin layer
photosensitive resin
Prior art date
Application number
TW105142025A
Other languages
Chinese (zh)
Other versions
TWI698708B (en
Inventor
片山晃男
漢那慎一
Original Assignee
富士軟片股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 富士軟片股份有限公司 filed Critical 富士軟片股份有限公司
Publication of TW201734637A publication Critical patent/TW201734637A/en
Application granted granted Critical
Publication of TWI698708B publication Critical patent/TWI698708B/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094Multilayer resist systems, e.g. planarising layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/40Treatment after imagewise removal, e.g. baking
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00Technologies relating to chemical industry
    • Y02P20/50Improvements relating to the production of bulk chemicals
    • Y02P20/582Recycling of unreacted starting or intermediate materials

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials For Photolithography (AREA)
  • Electroluminescent Light Sources (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

To provide a positive photosensitive transfer material having high adhesiveness to a substrate even when bonded at a low temperature and a high process speed, and allowing formation of a circuit wiring line with high resolution, and a method for manufacturing a circuit wiring line. A positive photosensitive transfer material 100 includes a temporary support and a positive photosensitive resin layer 14 which comprises: a polymer having a structural unit represented by formula A and having a weight average molecular weight of 1.0*10<SP>5</SP> or less; a plasticizer having a smaller weight average molecular weight than that of the polymer having the structural unit represented by formula A; and a photoacid generator. A method for manufacturing a circuit wiring line using the above material is also disclosed.

Description

正型感光性轉印材料及電路配線的製造方法Positive photosensitive transfer material and method of manufacturing circuit wiring

本發明是有關於一種正型感光性轉印材料及電路配線的製造方法。The present invention relates to a positive photosensitive transfer material and a method of manufacturing a circuit wiring.

靜電電容型輸入裝置等具備觸控面板的顯示裝置(有機電致發光(electroluminescent,EL)顯示裝置及液晶顯示裝置等)中,相當於可見部的感測器的電極圖案、周邊配線部分以及取出配線部分的配線等的導電層圖案設置於觸控面板內部。 通常於圖案化的層的形成中,由於用以獲得所需的圖案形狀的步驟數少,故而廣泛使用如下方法:對於使用感光性轉印材料而設置於任意基板上的感光性樹脂組成物的層,經由具有所需圖案的遮罩進行曝光,部分性地硬化後進行顯影。In a display device (an organic electroluminescent (EL) display device, a liquid crystal display device, or the like) including a touch panel such as a capacitive input device, an electrode pattern corresponding to a sensor of a visible portion, a peripheral wiring portion, and a take-out A conductive layer pattern such as wiring of the wiring portion is provided inside the touch panel. In the formation of a patterned layer, since the number of steps for obtaining a desired pattern shape is small, the following method is widely used for a photosensitive resin composition provided on an arbitrary substrate using a photosensitive transfer material. The layer is exposed through a mask having a desired pattern, partially cured, and developed.

例如於專利文獻1中揭示有如下的感光性轉印材料及使用其的圖案形成方法,所述感光性轉印材料包括支持體、以及感光性樹脂組成物層,且感光性樹脂組成物層含有包含具有構成單元a1的聚合體的聚合體成分以及B光酸產生劑,所述構成單元a1具有A酸基由酸分解性基所保護的基團,並且感光性樹脂組成物不具有乙烯性交聯結構。For example, Patent Document 1 discloses a photosensitive transfer material including a support and a photosensitive resin composition layer, and a pattern forming method using the same, and the photosensitive resin composition layer contains A polymer component having a polymer having the constituent unit a1 and a B photoacid generator having a group in which the acid group is protected by an acid-decomposable group, and the photosensitive resin composition does not have an ethylenic cross-linking structure.

另外,專利文獻2中揭示有如下的感光性轉印材料及使用其的圖案形成方法,所述感光性轉印材料的特徵在於:依次包括支持體、熱塑性樹脂層、及感光性樹脂組成物層,並且感光性樹脂組成物層含有包含具有構成單元(a1)的聚合體的聚合體成分(A)以及光酸產生劑(B),所述構成單元(a1)具有酸基由酸分解性基所保護的基團。 [現有技術文獻] [專利文獻]Further, Patent Document 2 discloses a photosensitive transfer material comprising a support, a thermoplastic resin layer, and a photosensitive resin composition layer in this order, and a pattern forming method using the same. And the photosensitive resin composition layer contains a polymer component (A) including a polymer having a constituent unit (a1) and a photoacid generator (B) having an acid group-based acid-decomposable group Protected groups. [Prior Art Document] [Patent Literature]

[專利文獻1]WO2015/093271號公報 [專利文獻2]WO2014/065220號公報[Patent Document 1] WO2015/093271 (Patent Document 2) WO2014/065220

[發明所欲解決的課題] 觸控面板用電路配線中,相當於可見部的感測器的電極圖案與周邊取出部(周邊配線部分與取出配線部分)的配線不交叉,不需要藉由橋等的三維連接。因此,觸控面板用電路配線的製造方法的技術領域中,如使用現有的感光性樹脂組成物的圖案形成方法般,不對每個所需的圖案形成抗蝕劑,期待藉由1次的抗蝕劑形成來形成包含多種圖案的導電層的電路配線,從而省略步驟。[Problems to be Solved by the Invention] In the circuit wiring for a touch panel, the electrode pattern of the sensor corresponding to the visible portion does not intersect the wiring of the peripheral extraction portion (the peripheral wiring portion and the extraction wiring portion), and does not need to be bridged. Three-dimensional connections. Therefore, in the technical field of the method for manufacturing a circuit wiring for a touch panel, as in the case of using a pattern forming method of a conventional photosensitive resin composition, a resist is not formed for each desired pattern, and it is expected that the film is resistant once. The etchant is formed to form circuit wirings of the conductive layers including the plurality of patterns, thereby omitting the steps.

另外,就生產性提高等觀點而言,理想為於不降低形成圖案的電路配線的解析度的情況下,將用以形成電路配線的基板(以下存在稱為「電路配線形成用基板」的情況)與感光性轉印材料,例如一邊以輥對輥(Roll to Roll)來高速搬送一邊於低溫下貼合,進行曝光、顯影等。In addition, it is preferable that the substrate for forming a circuit wiring (hereinafter referred to as a "circuit for forming a circuit wiring") is used in the case of improving the resolution of the circuit wiring in which the pattern is formed, from the viewpoint of improving the productivity. The photosensitive transfer material is bonded to a photosensitive material at a low temperature while being conveyed at a high speed by a roll to roll, and exposed, developed, or the like.

專利文獻1、專利文獻2中揭示的感光性轉印材料中,若以低溫且高速來貼合於電路配線形成用基板上,則存在如下情況:密合不充分,當剝離暫時支持體時,感光性樹脂層亦一併剝離,或於電路配線的製造步驟的中途,感光性樹脂組成物層的一部分意外地剝離。In the photosensitive transfer material disclosed in Patent Document 1 and Patent Document 2, when the substrate is formed on the circuit wiring forming substrate at a low temperature and high speed, the adhesion is insufficient, and when the temporary support is peeled off, The photosensitive resin layer is also peeled off at the same time, or a part of the photosensitive resin composition layer is accidentally peeled off in the middle of the manufacturing process of the circuit wiring.

本發明的目的在於提供一種正型感光性轉印材料及電路配線的製造方法,所述正型感光性轉印材料即便以低溫且高速(例如,貼合所使用的輥溫度為130℃以下,搬送速度為1 m/min以上)對電路配線形成用基板貼合,亦具有高的密合性,可以高解析度來形成電路配線。An object of the present invention is to provide a positive photosensitive transfer material and a circuit wiring manufacturing method, wherein the positive photosensitive transfer material has a low temperature and a high speed (for example, a roll temperature used for bonding is 130 ° C or lower, The transfer speed is 1 m/min or more. The circuit wiring forming substrate is bonded to each other, and also has high adhesion, and the circuit wiring can be formed with high resolution.

[解決課題的手段] 本發明者等人進行了銳意研究,結果發現,藉由正型感光性轉印材料於暫時支持體上包括包含特定的聚合體、塑化劑及光酸產生劑的正型感光性樹脂層,可達成所述目的。即,用以達成本發明的目的的具體手段如下所述。[Means for Solving the Problem] The inventors of the present invention conducted intensive studies and found that positively containing a specific polymer, a plasticizer, and a photoacid generator are included in the temporary support by the positive photosensitive transfer material. The photosensitive resin layer can achieve the object. That is, specific means for achieving the object of the present invention are as follows.

<1>一種正型感光性轉印材料,其包括: 暫時支持體;以及 正型感光性樹脂層,包含具有下述式A所表示的構成單元且重量平均分子量為1.0×105 以下的聚合體、重量平均分子量小於具有式A所表示的構成單元的聚合體的塑化劑、以及光酸產生劑,且配置於暫時支持體上, [化1] <1> A positive photosensitive transfer material comprising: a temporary support; and a positive photosensitive resin layer comprising a polymer having a structural unit represented by the following formula A and having a weight average molecular weight of 1.0 × 10 5 or less a plasticizer having a weight average molecular weight smaller than a polymer having a constituent unit represented by Formula A, and a photoacid generator, and disposed on the temporary support, [Chemical Formula 1]

式A中,R31 及R32 分別獨立地表示氫原子、烷基或芳基,至少R31 及R32 的任一者為烷基或芳基,R33 表示烷基或芳基,R31 或R32 、與R33 可連結而形成環狀醚,R34 表示氫原子或甲基,X0 表示單鍵或伸芳基。In the formula A, R 31 and R 32 each independently represent a hydrogen atom, an alkyl group or an aryl group, and at least one of R 31 and R 32 is an alkyl group or an aryl group, and R 33 represents an alkyl group or an aryl group, and R 31 Or R 32 may be bonded to R 33 to form a cyclic ether, R 34 represents a hydrogen atom or a methyl group, and X 0 represents a single bond or an extended aryl group.

<2>如<1>所述的正型感光性轉印材料,其中塑化劑為分子內具有伸烷基氧基的化合物。 <3>如<1>或<2>所述的正型感光性轉印材料,其中相對於正型感光性樹脂層的總固體成分,具有式A所表示的構成單元的聚合體與塑化劑的合計比率為70質量%以上、99質量%以下。 <4>如<1>~<3>中任一項所述的正型感光性轉印材料,其中於正型感光性樹脂層中,相對於具有式A所表示的構成單元的聚合體與塑化劑的合計量,具有式A所表示的構成單元的聚合體的比率為60質量%以上、90質量%以下。 <5>如<1>~<4>中任一項所述的正型感光性轉印材料,其中進而相對於所述正型感光性樹脂層的總固體成分100質量份,含有0.001質量份~10質量份的非離子系界面活性劑。 <6>如<5>所述的正型感光性轉印材料,其中所述非離子系界面活性劑為利用凝膠滲透層析法來測定的聚苯乙烯換算的重量平均分子量(Mw)為1.0×103 以上1.0×104 以下,且包含下述式(I-1)所表示的構成單元A及構成單元B的共聚物,(所述式(I-1)中,R401 及R403 分別獨立地表示氫原子或甲基,R402 表示碳數1以上、4以下的直鏈伸烷基,R404 表示氫原子或碳數1以上、4以下的烷基,L表示碳數3以上、6以下的伸烷基,p及q為表示聚合比的質量百分率,p表示10質量%以上、80質量%以下的數值,q表示20質量%以上、90質量%以下的數值,r表示1以上、18以下的整數,s表示1以上、10以下的整數)。 <7>如<1>~<6>中任一項所述的正型感光性轉印材料,其中暫時支持體具有透光性。<2> The positive photosensitive transfer material according to <1>, wherein the plasticizer is a compound having an alkylene group in the molecule. <3> The positive photosensitive transfer material of the above-mentioned <1>, wherein the polymer and plasticization of the structural unit represented by Formula A with respect to the total solid content of the positive photosensitive resin layer. The total ratio of the agents is 70% by mass or more and 99% by mass or less. The positive photosensitive transfer material of any one of the above-mentioned positive photosensitive resin layers with respect to the polymer of the structural unit represented by Formula A, and The total amount of the plasticizers is such that the ratio of the polymer having the constituent unit represented by Formula A is 60% by mass or more and 90% by mass or less. The positive photosensitive material of any one of the above-mentioned positive photosensitive resin layers is 0.001 mass part with respect to 100 mass parts of the total solid content of the positive photosensitive resin layer. ~10 parts by mass of a nonionic surfactant. <6> The positive photosensitive transfer material according to <5>, wherein the nonionic surfactant is a polystyrene-equivalent weight average molecular weight (Mw) measured by gel permeation chromatography. 1.0×10 3 or more and 1.0×10 4 or less, and a copolymer of the structural unit A and the structural unit B represented by the following formula (I-1), (In the formula (I-1), R 401 and R 403 each independently represent a hydrogen atom or a methyl group, R 402 represents a linear alkyl group having 1 or more and 4 or less carbon atoms, and R 404 represents a hydrogen atom or carbon. An alkyl group having a number of 1 or more and 4 or less, L represents an alkylene group having 3 or more and 6 or less carbon atoms, p and q are a mass percentage indicating a polymerization ratio, and p is a numerical value of 10% by mass or more and 80% by mass or less, q The numerical value is 20% by mass or more and 90% by mass or less, r is an integer of 1 or more and 18 or less, and s is an integer of 1 or more and 10 or less. The positive photosensitive transfer material according to any one of <1> to <6> wherein the temporary support has translucency.

<8>一種電路配線的製造方法,其依次包括: (a)貼合步驟,對於基板,即,包括基材、以及包含構成材料相互不同的第一導電層及第二導電層的多個導電層,且於基材的表面上,以自遠離基材的表面起依次積層有作為最表面層的第一導電層及第二導電層的基板,使如<7>所述的正型感光性轉印材料的正型感光性樹脂層與第一導電層接觸而貼合; (b)第一曝光步驟,經由貼合步驟後的正型感光性轉印材料的暫時支持體,對正型感光性樹脂層進行圖案曝光; (c)第一顯影步驟,自第一曝光步驟後的正型感光性樹脂層上剝離暫時支持體後,對第一曝光步驟後的正型感光性樹脂層進行顯影而形成第一圖案; (d)第一蝕刻步驟,對未配置第一圖案的區域中的多個導電層中的至少第一導電層及第二導電層進行蝕刻處理; (e)第二曝光步驟,以與第一圖案不同的圖案,對第一蝕刻步驟後的第一圖案進行圖案曝光; (f)第二顯影步驟,對第二曝光步驟後的第一圖案進行顯影而形成第二圖案;以及 (g)第二蝕刻步驟,對未配置第二圖案的區域中的多個導電層中的至少第一導電層進行蝕刻處理。 <9>如<8>所述的電路配線的製造方法,其中於第一蝕刻步驟之後、第二曝光步驟之前,更包括於第一圖案上貼附具有透光性的保護膜的步驟, 於第二曝光步驟中,經由保護膜而對第一圖案進行圖案曝光,並且 於第二曝光步驟後,自第一圖案上剝離保護膜後,進行第二蝕刻步驟。<8> A method of manufacturing a circuit wiring, comprising: (a) a bonding step of, for a substrate, that is, including a substrate, and a plurality of conductive layers including a first conductive layer and a second conductive layer different in constituent materials from each other; a layer on the surface of the substrate, wherein a substrate having a first conductive layer and a second conductive layer as the outermost layer is laminated in order from the surface away from the substrate, and the positive photosensitive property as described in <7> is obtained. The positive photosensitive resin layer of the transfer material is in contact with the first conductive layer and is bonded; (b) the first exposure step, the positive support is positively supported by the temporary support of the positive photosensitive transfer material after the bonding step The resin layer is subjected to pattern exposure; (c) a first development step of developing the positive photosensitive resin layer after the first exposure step after peeling off the temporary support from the positive photosensitive resin layer after the first exposure step And forming a first pattern; (d) a first etching step of etching at least the first conductive layer and the second conductive layer of the plurality of conductive layers in the region where the first pattern is not disposed; (e) the second exposure Steps with the first a different pattern, patternwise exposing the first pattern after the first etching step; (f) a second developing step of developing the first pattern after the second exposing step to form a second pattern; and (g) And a second etching step of etching at least the first conductive layer of the plurality of conductive layers in the region where the second pattern is not disposed. <9> The method of manufacturing a circuit wiring according to <8>, wherein after the first etching step and before the second exposure step, the step of attaching a light-transmitting protective film to the first pattern is further included. In the second exposure step, the first pattern is subjected to pattern exposure via a protective film, and after the second exposure step, after the protective film is peeled off from the first pattern, a second etching step is performed.

[發明的效果] 依據本發明,提供一種即便以低溫且高速(例如貼合所使用的輥溫度為130℃以下,搬送速度為1 m/min以上)對電路配線形成用基板貼合,亦具有高的密合性,可以高解析度來形成電路配線的正型感光性轉印材料及電路配線的製造方法。[Effects of the Invention] According to the present invention, it is possible to provide a substrate for circuit wiring formation even at a low temperature and at a high speed (for example, a roll temperature of 130 ° C or lower for bonding, and a transfer speed of 1 m/min or more). The high-adhesiveness can form a positive photosensitive transfer material of a circuit wiring and a manufacturing method of a circuit wiring with high resolution.

以下,對本發明的正型感光性轉印材料及電路配線的製造方法,進而對本發明所涉及的電路配線、輸入裝置、特別是作為觸控面板的輸入裝置、以及使用該輸入裝置的顯示裝置進行說明。此外,參照隨附的圖式來進行說明,但有符號省略的情況。 另外,本說明書中使用「~」來表示的數值範圍是指包含「~」的前後所記載的數值作為下限值及上限值的範圍。 另外,本說明書中,「(甲基)丙烯酸」表示丙烯酸及甲基丙烯酸的兩者或任一者,「(甲基)丙烯酸酯」表示丙烯酸酯及甲基丙烯酸酯的兩者或任一者。In the following, the positive photosensitive transfer material and the method of manufacturing the circuit wiring of the present invention further include the circuit wiring and the input device according to the present invention, particularly an input device as a touch panel, and a display device using the input device. Description. In addition, the description will be made with reference to the accompanying drawings, but the description is omitted. In addition, the numerical range represented by the "-" in this specification is the range which has the numerical value of the [--- In the present specification, "(meth)acrylic acid" means either or both of acrylic acid and methacrylic acid, and "(meth)acrylate" means either or both of acrylate and methacrylate. .

[正型感光性轉印材料] 本發明的正型感光性轉印材料包括暫時支持體、以及正型感光性樹脂層,所述正型感光性樹脂層包含:具有下述式A所表示的構成單元且重量平均分子量為1.0×105 以下的聚合體、重量平均分子量小於具有式A所表示的構成單元的聚合體的塑化劑、以及光酸產生劑,且配置於暫時支持體上。[Positive Photosensitive Transfer Material] The positive photosensitive transfer material of the present invention includes a temporary support and a positive photosensitive resin layer, and the positive photosensitive resin layer includes the following formula A. The polymer having a weight average molecular weight of 1.0 × 10 5 or less, a plasticizer having a weight average molecular weight smaller than that of the polymer having the structural unit represented by Formula A, and a photoacid generator are disposed on the temporary support.

[化2] [Chemical 2]

式A中,R31 及R32 分別獨立地表示氫原子、烷基或芳基,至少R31 及R32 的任一者為烷基或芳基,R33 表示烷基或芳基,R31 或R32 、與R33 可連結而形成環狀醚,R34 表示氫原子或甲基,X0 表示單鍵或伸芳基。In the formula A, R 31 and R 32 each independently represent a hydrogen atom, an alkyl group or an aryl group, and at least one of R 31 and R 32 is an alkyl group or an aryl group, and R 33 represents an alkyl group or an aryl group, and R 31 Or R 32 may be bonded to R 33 to form a cyclic ether, R 34 represents a hydrogen atom or a methyl group, and X 0 represents a single bond or an extended aryl group.

圖1概略性地表示本發明的正型感光性轉印材料的層構成的一例。圖1所示的正型感光性轉印材料100依次積層有暫時支持體12、正型感光性樹脂層14、以及覆蓋膜16。正型感光性樹脂層14包含:具有式A所表示的構成單元且重量平均分子量為1.0×105 以下的聚合體、重量平均分子量小於具有式A所表示的構成單元的聚合體的塑化劑、以及光酸產生劑。 以下,對本發明的正型感光性轉印材料的構成材料等進行說明。此外,關於本發明中的所述構成,本說明書中有時以如下方式來稱呼。 有時將式A所表示的構成單元稱為「構成單元(a)」。 有時將具有式A所表示的構成單元且重量平均分子量為1.0×105 以下的聚合體稱為「特定聚合體」。 有時將重量平均分子量小於具有式A所表示的構成單元的聚合體的塑化劑簡稱為「塑化劑」。 有時將正型感光性樹脂層稱為「感光性樹脂層」。Fig. 1 schematically shows an example of a layer configuration of a positive photosensitive transfer material of the present invention. The positive photosensitive transfer material 100 shown in FIG. 1 is sequentially laminated with a temporary support 12, a positive photosensitive resin layer 14, and a cover film 16. The positive photosensitive resin layer 14 includes a polymer having a structural unit represented by Formula A and having a weight average molecular weight of 1.0×10 5 or less, and a plasticizer having a weight average molecular weight smaller than that of the polymer having the structural unit represented by Formula A. And photoacid generators. Hereinafter, constituent materials and the like of the positive photosensitive transfer material of the present invention will be described. Further, the above-described configuration in the present invention may be referred to as follows in the present specification. The constituent unit represented by Formula A is sometimes referred to as "constituting unit (a)". A polymer having a structural unit represented by Formula A and having a weight average molecular weight of 1.0 × 10 5 or less is sometimes referred to as a "specific polymer". The plasticizer having a weight average molecular weight smaller than the polymer having the constituent unit represented by Formula A may be simply referred to as a "plasticizer". The positive photosensitive resin layer may be referred to as a "photosensitive resin layer".

[暫時支持體] 暫時支持體12為支持正型感光性樹脂層且可自正型感光性樹脂層上剝離的支持體。為了於對正型感光性樹脂層進行圖案曝光時,可經由暫時支持體而對正型感光性樹脂層進行曝光,本發明中使用的暫時支持體12較佳為具有透光性。 所謂具有透光性,是指圖案曝光的主波長的透過率為50%以上,就感度提高的觀點而言,該透過率較佳為60%以上,更佳為70%以上。 暫時支持體可列舉玻璃基板、樹脂膜、紙等,就強度及可撓性等觀點而言,特佳為樹脂膜。[Temporary Support] The temporary support 12 is a support that can support the positive photosensitive resin layer and can be peeled off from the positive photosensitive resin layer. In order to perform pattern exposure on the positive photosensitive resin layer, the positive photosensitive resin layer can be exposed via a temporary support, and the temporary support 12 used in the present invention preferably has light transmissivity. The light transmissive property means that the transmittance of the dominant wavelength of the pattern exposure is 50% or more, and the transmittance is preferably 60% or more, and more preferably 70% or more from the viewpoint of improving the sensitivity. Examples of the temporary support include a glass substrate, a resin film, and paper. From the viewpoint of strength and flexibility, a resin film is particularly preferred.

暫時支持體的厚度並無特別限定,就作為支持體的強度、與電路配線形成用基板的貼合所要求的可撓性、最初的曝光步驟中所要求的透光性等觀點而言,只要根據材質來選擇即可。The thickness of the temporary support is not particularly limited, and as long as the strength of the support, the flexibility required for bonding the circuit wiring forming substrate, and the light transmittance required in the first exposure step, You can choose according to the material.

關於暫時支持體的較佳形態,例如於日本專利特開2014-85643號公報的[0017]~[0018]中有記載,該公報的內容併入本說明書中。A preferred embodiment of the temporary support is described in [0017] to [0018] of JP-A-2014-85643, the contents of which are hereby incorporated by reference.

[正型感光性樹脂層] 本發明的正型感光性轉印材料100包括配置於暫時支持體12上的正型感光性樹脂層14。本發明中的正型感光性樹脂層14包含:具有式A所表示的構成單元(a)且重量平均分子量為1.0×105 以下的聚合體(特定聚合體)、重量平均分子量小於特定聚合體的塑化劑、以及光酸產生劑。[Positive Photosensitive Resin Layer] The positive photosensitive resist material 100 of the present invention includes a positive photosensitive resin layer 14 disposed on the temporary support 12 . The positive photosensitive resin layer 14 of the present invention comprises a polymer (specific polymer) having a weight average molecular weight of 1.0 × 10 5 or less and having a weight average molecular weight of less than a specific polymer. Plasticizer, and photoacid generator.

<聚合體成分> (特定聚合體) 本發明中的正型感光性樹脂層包含具有式A所表示的構成單元(a)且重量平均分子量(Mw)為1.0×105 以下的特定聚合體來作為聚合體成分。特定聚合體為具有由酸分解性基所保護的保護羧基的聚合體的一種,但具有由酸分解性基所保護的保護羧基的構成單元中,就提高感度的觀點而言,較佳為式A所表示的構成單元(a)。<Polymer component> (Specific polymer) The positive photosensitive resin layer of the present invention contains a specific polymer having a structural unit (a) represented by Formula A and having a weight average molecular weight (Mw) of 1.0 × 10 5 or less. As a polymer component. The specific polymer is one of a polymer having a protective carboxyl group protected by an acid-decomposable group, but in the structural unit having a protective carboxyl group protected by an acid-decomposable group, from the viewpoint of improving sensitivity, a preferred formula is preferred. The constituent unit (a) indicated by A.

式A中,於R31 或R32 為烷基的情況下,碳數較佳為1~10的烷基。於R31 或R32 為芳基的情況下,較佳為苯基。R31 及R32 分別較佳為氫原子或碳數1~4的烷基。 式A中,R33 表示烷基或芳基,較佳為碳數1~10的烷基,更佳為1~6的烷基。 式A中,R31 或R32 、與R33 可連結而形成環狀醚,較佳為R31 或R32 、與R33 連結而形成環狀醚。環狀醚的環員數並無特別限制,較佳為5或6,更佳為5。 式A中,R34 表示氫原子或甲基,較佳為氫原子。 式A中,X0 表示單鍵或伸芳基,較佳為單鍵。In the formula A, when R 31 or R 32 is an alkyl group, the number of carbon atoms is preferably an alkyl group of 1 to 10. In the case where R 31 or R 32 is an aryl group, a phenyl group is preferred. R 31 and R 32 are each preferably a hydrogen atom or an alkyl group having 1 to 4 carbon atoms. In the formula A, R 33 represents an alkyl group or an aryl group, preferably an alkyl group having 1 to 10 carbon atoms, more preferably an alkyl group having 1 to 6 carbon atoms. In the formula A, R 31 or R 32 may be bonded to R 33 to form a cyclic ether, preferably R 31 or R 32 , and is bonded to R 33 to form a cyclic ether. The number of ring members of the cyclic ether is not particularly limited, and is preferably 5 or 6, more preferably 5. In the formula A, R 34 represents a hydrogen atom or a methyl group, preferably a hydrogen atom. In the formula A, X 0 represents a single bond or an extended aryl group, preferably a single bond.

式A所表示的構成單元(a)中,就進一步提高感度的觀點而言,更佳為下述式(A1)所表示的構成單元。In the structural unit (a) represented by the formula A, the structural unit represented by the following formula (A1) is more preferable from the viewpoint of further improving the sensitivity.

(A1) [化3] (A1) [Chem. 3]

式(A1)中,R121 表示氫原子或甲基,R122 ~R128 分別獨立地表示氫原子或碳數1~4的烷基。 式(A1)中,R121 較佳為氫原子或甲基。 式(A1)中,R122 ~R128 較佳為氫原子。In the formula (A1), R 121 represents a hydrogen atom or a methyl group, and R 122 to R 128 each independently represent a hydrogen atom or an alkyl group having 1 to 4 carbon atoms. In the formula (A1), R 121 is preferably a hydrogen atom or a methyl group. In the formula (A1), R 122 to R 128 are preferably a hydrogen atom.

式A所表示的具有由酸分解性基所保護的保護羧基的構成單元(a)的較佳具體例可例示下述構成單元。此外,R表示氫原子或甲基。A preferred specific example of the structural unit (a) having a protective carboxyl group protected by an acid-decomposable group represented by Formula A can be exemplified by the following structural unit. Further, R represents a hydrogen atom or a methyl group.

[化4] [Chemical 4]

正型感光性樹脂層中所含的聚合體成分除了具有式A所表示的構成單元(a),亦可具有其他的構成單元(b)。具有式A所表示的構成單元(a)的聚合體亦可包含其他的構成單元(b)來作為共聚合成分。另外,與聚合體成分中使用的含有式A所表示的構成單元(a)的聚合體不同,實質上不含式A所表示的構成單元(a)的聚合體亦可具有其他的構成單元(b)。The polymer component contained in the positive photosensitive resin layer may have another constituent unit (b) in addition to the structural unit (a) represented by Formula A. The polymer having the structural unit (a) represented by Formula A may also contain another constituent unit (b) as a copolymerization component. Further, unlike the polymer containing the constituent unit (a) represented by Formula A used in the polymer component, the polymer substantially not containing the constituent unit (a) represented by Formula A may have other constituent units ( b).

於特定聚合體為共聚物的情況下,具有式A所表示的構成單元(a)的聚合體中的構成單元(a)的共聚合比例相對於該聚合體,較佳為5莫耳%~90莫耳%,更佳為10莫耳%~80莫耳%,特佳為30莫耳%~70莫耳%。 另外,將全部的聚合體成分分解為構成單元(單體單元)後,相對於全部構成單元的莫耳(mol)數,具有酸基由酸分解性基所保護的保護羧基的構成單元(a)的比例較佳為0莫耳%~80莫耳%,更佳為10莫耳%~70莫耳%,特佳為15莫耳%~50莫耳%。When the specific polymer is a copolymer, the copolymerization ratio of the structural unit (a) in the polymer having the structural unit (a) represented by Formula A is preferably 5 mol% with respect to the polymer. 90% by mole, more preferably 10% by mole to 80% by mole, particularly preferably 30% by mole to 70% by mole. In addition, after all the polymer components are decomposed into a constituent unit (monomer unit), a constituent unit of a protective carboxyl group having an acid group protected by an acid-decomposable group is provided with respect to the number of moles of all constituent units. The ratio is preferably from 0 mol% to 80 mol%, more preferably from 10 mol% to 70 mol%, particularly preferably from 15 mol% to 50 mol%.

成為其他的構成單元(b)的單體並無特別限制,例如可列舉:苯乙烯類、(甲基)丙烯酸烷基酯、(甲基)丙烯酸環狀烷基酯、(甲基)丙烯酸芳基酯、不飽和二羧酸二酯、雙環不飽和化合物類、順丁烯二醯亞胺化合物類、不飽和芳香族化合物、共軛二烯系化合物、不飽和單羧酸、不飽和二羧酸、不飽和二羧酸酐、以及其他的不飽和化合物。另外,正型感光性樹脂層中所含的聚合體成分如後所述,亦可具有包含酸基的構成單元來作為其他的構成單元(b)。成為其他的構成單元(b)的單體可單獨使用或者將兩種以上組合使用。The monomer to be another constituent unit (b) is not particularly limited, and examples thereof include styrene, alkyl (meth)acrylate, cyclic alkyl (meth)acrylate, and (meth)acrylic acid. Base ester, unsaturated dicarboxylic acid diester, bicyclic unsaturated compound, maleimide compound, unsaturated aromatic compound, conjugated diene compound, unsaturated monocarboxylic acid, unsaturated dicarboxylic acid Acid, unsaturated dicarboxylic anhydride, and other unsaturated compounds. In addition, as described later, the polymer component contained in the positive photosensitive resin layer may have a constituent unit including an acid group as another constituent unit (b). The monomers which are other constituent units (b) may be used singly or in combination of two or more.

具體而言,其他的構成單元(b)可列舉由以下化合物而來的構成單元:苯乙烯、第三丁氧基苯乙烯、甲基苯乙烯、羥基苯乙烯、α-甲基苯乙烯、乙醯氧基苯乙烯、甲氧基苯乙烯、乙氧基苯乙烯、氯苯乙烯、乙烯基苯甲酸甲酯、乙烯基苯甲酸乙酯、4-羥基苯甲酸(3-甲基丙烯醯氧基丙基)酯、(甲基)丙烯酸、(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸正丙酯、(甲基)丙烯酸異丙酯、(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸苄酯、(甲基)丙烯酸異冰片酯、丙烯腈、乙二醇單乙醯乙酸酯單(甲基)丙烯酸酯等。除此以外,可列舉日本專利特開2004-264623號公報的段落編號0021~0024中記載的化合物。Specifically, the other constituent unit (b) includes constituent units derived from the following compounds: styrene, tert-butoxystyrene, methylstyrene, hydroxystyrene, α-methylstyrene, and B. Nonyloxystyrene, methoxystyrene, ethoxystyrene, chlorostyrene, methyl vinylbenzoate, ethyl vinylbenzoate, 4-hydroxybenzoic acid (3-methacryloxyloxy) Propyl)ester, (meth)acrylic acid, methyl (meth)acrylate, ethyl (meth)acrylate, n-propyl (meth)acrylate, isopropyl (meth)acrylate, (meth)acrylic acid 2-hydroxyethyl ester, 2-hydroxypropyl (meth)acrylate, benzyl (meth)acrylate, isobornyl (meth)acrylate, acrylonitrile, ethylene glycol monoacetic acid acetate monomethyl ) Acrylate and the like. In addition, the compound described in Paragraph Nos. 0021 to 0024 of JP-A-2004-264623 is mentioned.

另外,就電特性的觀點而言,其他的構成單元(b)較佳為苯乙烯類、以及具有脂肪族環式骨架的基團。具體而言可列舉:苯乙烯、第三丁氧基苯乙烯、甲基苯乙烯、羥基苯乙烯、α-甲基苯乙烯、(甲基)丙烯酸二環戊酯、(甲基)丙烯酸環己酯、(甲基)丙烯酸異冰片酯、(甲基)丙烯酸苄酯等。Further, from the viewpoint of electrical properties, the other constituent unit (b) is preferably a styrene group or a group having an aliphatic cyclic skeleton. Specific examples thereof include styrene, tert-butoxystyrene, methylstyrene, hydroxystyrene, α-methylstyrene, dicyclopentanyl (meth)acrylate, and cyclohexyl (meth)acrylate. Ester, isobornyl (meth)acrylate, benzyl (meth)acrylate, and the like.

進而,另外,就密合性的觀點而言,其他的構成單元(b)較佳為(甲基)丙烯酸烷基酯。具體而言可列舉:(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸正丁酯等,更佳為(甲基)丙烯酸甲酯。 構成含有式A所表示的構成單元(a)的聚合體的構成單元中,其他的構成單元(b)的含有率較佳為60莫耳%以下,更佳為50莫耳%以下,尤佳為40莫耳%以下。下限值亦可為0莫耳%,但例如可設為1莫耳%以上,進而可設為5莫耳%以上。若為所述的數值範圍內,則正型感光性轉印材料的顯影性及解析度良好,尤其對於碳酸鈉等的弱鹼性顯影液亦可獲得良好的顯影性及解析度。Further, from the viewpoint of adhesion, the other constituent unit (b) is preferably an alkyl (meth)acrylate. Specific examples thereof include methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, and n-butyl (meth)acrylate, and more preferably methyl (meth)acrylate. . In the constituent unit constituting the polymer comprising the structural unit (a) represented by the formula A, the content of the other constituent unit (b) is preferably 60 mol% or less, more preferably 50 mol% or less. It is 40% or less. The lower limit value may be 0 mol%, but may be, for example, 1 mol% or more, and may be 5 mol% or more. When it is in the above numerical range, the positive-type photosensitive transfer material is excellent in developability and resolution, and in particular, it is possible to obtain good developability and resolution in a weakly alkaline developing solution such as sodium carbonate.

正型感光性樹脂層中所含的聚合體成分較佳為具有包含酸基的構成單元來作為其他的構成單元(b)。藉由具有包含酸基的構成單元,則容易溶解於鹼性的顯影液中,可實現顯影時間的縮短化。本發明中的所謂酸基是指pKa為10以下的質子解離性基。酸基通常是使用可形成酸基的單體,作為包含酸基的構成單元而併入聚合體中。藉由使如上所述的包含酸基的構成單元包含於聚合體中,存在對於鹼性的顯影液變得容易溶解的傾向。 其他的構成單元(b)中使用的包含酸基的構成單元的酸基可例示:由羧酸基而來的酸基、由磺醯胺基而來的酸基、由膦酸基而來的酸基、由磺酸基而來的酸基、由酚性羥基而來的酸基、磺醯胺基、磺醯亞胺基等,較佳為由羧酸基而來的酸基及/或由酚性羥基而來的酸基。 其他的構成單元(b)中使用的包含酸基的構成單元更佳為酸基對由苯乙烯而來的構成單元或者由乙烯基化合物而來的構成單元進行取代而成的構成單元、以及由(甲基)丙烯酸而來的構成單元。The polymer component contained in the positive photosensitive resin layer preferably has a constituent unit containing an acid group as another constituent unit (b). By having a constituent unit containing an acid group, it is easily dissolved in an alkaline developing solution, and the development time can be shortened. The acid group in the present invention means a proton dissociative group having a pKa of 10 or less. The acid group is usually incorporated into the polymer as a constituent unit containing an acid group using a monomer capable of forming an acid group. When the constituent unit containing the acid group as described above is contained in the polymer, there is a tendency that the alkaline developing solution is easily dissolved. Examples of the acid group of the structural unit containing an acid group used in the other structural unit (b) include an acid group derived from a carboxylic acid group, an acid group derived from a sulfonylamino group, and a phosphonic acid group. An acid group, an acid group derived from a sulfonic acid group, an acid group derived from a phenolic hydroxyl group, a sulfonylamino group, a sulfonimide group, etc., preferably an acid group derived from a carboxylic acid group and/or An acid group derived from a phenolic hydroxyl group. The constituent unit containing an acid group used in the other constituent unit (b) is more preferably a constituent unit in which an acid group is substituted with a constituent unit derived from styrene or a constituent unit derived from a vinyl compound, and A constituent unit derived from (meth)acrylic acid.

進而,就使對顯影液的溶解性以及膜正型感光性樹脂層的物理物性最佳化的觀點而言,具有包含酸基的酯的構成單元亦較佳。Furthermore, from the viewpoint of optimizing the solubility of the developer and the physical physical properties of the film-type photosensitive resin layer, a constituent unit having an ester containing an acid group is also preferable.

本發明中,就感度的觀點而言,其他的構成單元(b)特佳為含有具有羧基的構成單元、或者具有酚性羥基的構成單元。In the present invention, from the viewpoint of sensitivity, the other constituent unit (b) is particularly preferably a constituent unit having a carboxyl group or a constituent unit having a phenolic hydroxyl group.

具有式A所表示的構成單元(a)的聚合體較佳為包含其他的構成單元(b)中的由羧酸基而來的構成單元及/或其酯來作為共聚合成分,更佳為包含由(甲基)丙烯酸、(甲基)丙烯酸苄酯或者(甲基)丙烯酸2-羥基乙酯而來的構成單元來作為共聚合成分。 於酸基為酚性酸基的情況下,包括具有由酸分解性基所保護的保護羧基的構成單元的聚合體中的包含酸基的構成單元的共聚合比例,相對於該包括具有由酸分解性基所保護的羧基的構成單元的聚合體,較佳為0莫耳%~40莫耳%,更佳為0莫耳%~20莫耳%。 另外,於酸基為羧酸性酸基的情況下,相對於該包括具有由酸分解性基所保護的羧基的構成單元的聚合體,該包含酸基的構成單元的共聚合比例較佳為0莫耳%~30莫耳%,更佳為0莫耳%~20莫耳%。 包括具有由酸分解性基所保護的保護羧基的構成單元的聚合體中的包含酸基的酯的構成單元的共聚合比例,相對於該包括具有由酸分解性基所保護的保護羧基的構成單元的聚合體,較佳為10莫耳%~80莫耳%,更佳為15莫耳%~70莫耳%,特佳為20莫耳%~60莫耳%。The polymer having the structural unit (a) represented by the formula A preferably contains a constituent unit derived from a carboxylic acid group in another constituent unit (b) and/or an ester thereof as a copolymerization component, more preferably A constituent unit derived from (meth)acrylic acid, benzyl (meth)acrylate or 2-hydroxyethyl (meth)acrylate is included as a copolymerization component. In the case where the acid group is a phenolic acid group, the copolymerization ratio of the constituent unit including the acid group in the polymer including the constituent unit having the protective carboxyl group protected by the acid-decomposable group, with respect to the inclusion has an acid The polymer of the constituent unit of the carboxyl group protected by the decomposable group is preferably from 0 mol% to 40 mol%, more preferably from 0 mol% to 20 mol%. Further, in the case where the acid group is a carboxylic acid group, the copolymerization ratio of the constituent unit containing the acid group is preferably 0 with respect to the polymer including the constituent unit having a carboxyl group protected by the acid-decomposable group. Molar% to 30% by mole, more preferably 0% by mole to 20% by mole. The copolymerization ratio of the constituent unit of the acid group-containing ester in the polymer having the constituent unit protecting the carboxyl group protected by the acid-decomposable group, and the composition including the protective carboxyl group having the acid-decomposable group The polymer of the unit is preferably from 10 mol% to 80 mol%, more preferably from 15 mol% to 70 mol%, particularly preferably from 20 mol% to 60 mol%.

正型感光性樹脂層中所含的聚合體成分中,具有式A所表示的構成單元(a)的聚合體可為一種,亦可為兩種以上。 正型感光性樹脂層含有兩種以上的包括具有酸基由酸分解性基所保護的基團的構成單元的聚合體來作為聚合體成分,且亦可包含具有式A所表示的構成單元(a)的聚合體來作為至少一種聚合體。Among the polymer components contained in the positive photosensitive resin layer, the polymer having the structural unit (a) represented by Formula A may be one type or two or more types. The positive photosensitive resin layer contains, as a polymer component, a polymer comprising two or more constituent units including a group having an acid group protected by an acid-decomposable group, and may also contain a constituent unit represented by Formula A ( The polymer of a) acts as at least one polymer.

正型感光性樹脂層中所含的含有式A所表示的構成單元(a)的聚合體(特定聚合體)的分子量以聚苯乙烯換算重量平均分子量計為1.0×105 以下。藉由正型感光性樹脂層中所含的特定聚合體的重量平均分子量為1.0×105 以下,可將正型感光性樹脂層的熔融黏度抑制為低值,可在與電路配線形成用基板的貼合(層壓)中實現低溫(例如130℃以下)下的貼合。此外,若特定聚合體的重量平均分子量過小,則當於暫時支持體上成膜為感光性樹脂層時變得過於柔軟,於處理步驟變得容易受損,除此以外,存在由於過剩的黏性而變得難以剝離覆蓋膜的可能性。 就所述觀點而言,正型感光性樹脂層中所含的特定聚合體的重量平均分子量較佳為2.0×103 ~1.0×105 、更佳為3.0×103 ~5.0×104 的範圍。 此外,正型感光性樹脂層中所含的各成分的重量平均分子量可利用凝膠滲透層析法(Gel Permeation Chromatography,GPC)來測定,測定裝置可使用多種市售的裝置,裝置的內容、以及測定技術為本領域技術人員所公知。 另外,特定聚合體的數量平均分子量與重量平均分子量的比(分散度)較佳為1.0~5.0,更佳為1.05~3.5。The molecular weight of the polymer (specific polymer) containing the structural unit (a) represented by Formula A contained in the positive photosensitive resin layer is 1.0 × 10 5 or less in terms of polystyrene-equivalent weight average molecular weight. When the weight average molecular weight of the specific polymer contained in the positive photosensitive resin layer is 1.0 × 10 5 or less, the melt viscosity of the positive photosensitive resin layer can be suppressed to a low value, and the substrate for circuit wiring can be formed. The bonding under low temperature (for example, 130 ° C or less) is achieved in the lamination (lamination). In addition, when the weight average molecular weight of the specific polymer is too small, it becomes too soft when the film is formed into a photosensitive resin layer on the temporary support, and is easily damaged during the treatment step, and there is excessive stickiness due to the addition. It becomes difficult to peel off the cover film. In view of the above, the weight average molecular weight of the specific polymer contained in the positive photosensitive resin layer is preferably from 2.0 × 10 3 to 1.0 × 10 5 , more preferably from 3.0 × 10 3 to 5.0 × 10 4 range. Further, the weight average molecular weight of each component contained in the positive photosensitive resin layer can be measured by gel permeation chromatography (GPC), and various commercially available devices can be used for the measurement device. And assay techniques are well known to those skilled in the art. Further, the ratio (dispersion) of the number average molecular weight to the weight average molecular weight of the specific polymer is preferably from 1.0 to 5.0, more preferably from 1.05 to 3.5.

(特定聚合體的製造方法) 特定聚合體的製造方法(合成法)並無特別限定,若列舉一例,則可藉由在包含用以形成式A所表示的構成單元(a)的聚合性單量體、進而視需要的用以形成其他構成單元(b)的聚合性單量體的有機溶劑中,使用聚合起始劑進行聚合來合成。另外,亦可藉由所謂的高分子反應來合成。(Manufacturing Method of Specific Polymer) The method for producing the specific polymer (synthesis method) is not particularly limited, and if an example is given, the polymerizable sheet including the constituent unit (a) represented by Formula A can be contained. The organic solvent in which the amount of the polymer and the polymerizable monomer of the other structural unit (b) are formed as needed, and polymerization is carried out by polymerization using a polymerization initiator. Further, it can also be synthesized by a so-called polymer reaction.

相對於總固體成分100質量份,本發明中的正型感光性樹脂層較佳為以50質量份~99.9質量份的比例包含聚合體成分,更佳為以70質量份~98質量份的比例包含聚合體成分。The positive photosensitive resin layer in the present invention preferably contains a polymer component in a proportion of 50 parts by mass to 99.9 parts by mass, more preferably 70 parts by mass to 98 parts by mass, based on 100 parts by mass of the total solid content. Contains polymer components.

另外,本發明的正型感光性轉印材料就即便於以低溫且高速對電路配線形成用基板進行貼合的情況下亦表現出高密合性的觀點而言,較佳為相對於正型感光性樹脂層的總固體成分,具有式A所表示的構成單元的聚合體與塑化劑的合計比率為70質量%以上、99質量%以下。In addition, the positive photosensitive material of the present invention preferably has a high adhesion even when the substrate for circuit wiring formation is bonded at a low temperature and a high speed, and is preferably positively sensitive. The total solid content of the resin layer is 70% by mass or more and 99% by mass or less based on the total ratio of the polymer having the constituent unit represented by Formula A to the plasticizer.

另外,本發明的正型感光性轉印材料就即便於以低溫且高速對電路配線形成用基板貼合的情況下亦表現出高密合性的觀點而言,較佳為於正型感光性樹脂層中,相對於具有式A所表示的構成單元的聚合體與塑化劑的合計量,具有式A所表示的構成單元的聚合體的比率為60質量%以上、90質量%以下。In addition, the positive photosensitive resin of the present invention is preferably a positive photosensitive resin from the viewpoint of exhibiting high adhesion even when the circuit wiring forming substrate is bonded at a low temperature and high speed. In the layer, the ratio of the polymer having the constituent unit represented by Formula A to the total amount of the polymer having the constituent unit represented by Formula A and the plasticizer is 60% by mass or more and 90% by mass or less.

(其他聚合體) 本發明中的正型感光性樹脂層除了包含含有式A所表示的構成單元(a)的聚合體(特定聚合體)來作為聚合體成分以外,亦可包含實質上不含式A所表示的構成單元(a)而具有其他構成單元的聚合體(有稱為「其他聚合體」的情況)。於本發明中的正型感光性樹脂層包含其他聚合體的情況下,其他聚合體的調配量較佳為總聚合體成分中的50質量%以下,更佳為30質量%以下,尤佳為20質量%以下。(Other Polymer) The positive photosensitive resin layer in the present invention may contain a polymer (specific polymer) containing the structural unit (a) represented by Formula A as a polymer component, and may contain substantially no The structural unit (a) represented by Formula A has a polymer of another structural unit (a case called "other polymer"). In the case where the positive photosensitive resin layer of the present invention contains another polymer, the blending amount of the other polymer is preferably 50% by mass or less, more preferably 30% by mass or less, even more preferably 30% by mass or less based on the total polymer component. 20% by mass or less.

正型感光性樹脂層除了含有特定聚合體以外,可僅包含一種其他聚合體,亦可包含兩種以上。The positive photosensitive resin layer may contain only one type of other polymer, or may contain two or more types, in addition to a specific polymer.

其他聚合體例如可使用聚羥基苯乙烯,亦可使用市售的SMA 1000P、SMA 2000P、SMA 3000P、SMA 1440F、SMA 17352P、SMA 2625P、SMA 3840F(以上,沙多瑪(Sartomer)公司製造),阿魯方(ARUFON)UC-3000、阿魯方(ARUFON)UC-3510、阿魯方(ARUFON)UC-3900、阿魯方(ARUFON)UC-3910、阿魯方(ARUFON)UC-3920、阿魯方(ARUFON)UC-3080(以上,東亞合成(股)製造),莊克力(Joncryl)690、莊克力(Joncryl)678、莊克力(Joncryl)67、莊克力(Joncryl)586(以上,巴斯夫(BASF)公司製造)等。As the other polymer, for example, polyhydroxystyrene can be used, and commercially available SMA 1000P, SMA 2000P, SMA 3000P, SMA 1440F, SMA 17352P, SMA 2625P, SMA 3840F (above, manufactured by Sartomer Co., Ltd.) can also be used. ARUFON UC-3000, ARUFON UC-3510, ARUFON UC-3900, ARUFON UC-3910, ARUFON UC-3920, ARUFON UC-3080 (above, East Asia Synthetic (manufactured)), Joncryl 690, Joncryl 678, Joncryl 67, Joncryl 586 (above, BASF) Company manufacturing) and so on.

<塑化劑> 本發明中的正型感光性樹脂層含有塑化劑。本發明中的塑化劑是為了改良正型感光性樹脂層的可塑性而添加。藉由正型感光性樹脂層除了包含特定聚合體以外還包含塑化劑,則熔融黏度更下降,即便以低溫且高速使正型感光性轉印材料與電路配線形成用基板貼合,亦可獲得高密合性。<Plasticizer> The positive photosensitive resin layer in the present invention contains a plasticizer. The plasticizer in the present invention is added for the purpose of improving the plasticity of the positive photosensitive resin layer. When the positive photosensitive resin layer contains a plasticizer in addition to the specific polymer, the melt viscosity is further lowered, and even if the positive photosensitive transfer material is bonded to the circuit wiring forming substrate at a low temperature and high speed, Get high adhesion.

就賦予可塑性的觀點而言,塑化劑較佳為重量平均分子量小於特定聚合體。 就賦予可塑性的觀點而言,塑化劑的聚合平均分子量較佳為500以上且小於10000,更佳為700以上且小於5000,尤佳為800以上且小於4000。 塑化劑若為與特定聚合體相溶而表現出可塑性的化合物,則並無特別限定,就賦予可塑性的觀點而言,塑化劑較佳為於分子中具有伸烷基氧基。塑化劑中所含的伸烷基氧基較佳為具有下述結構。From the viewpoint of imparting plasticity, the plasticizer preferably has a weight average molecular weight smaller than that of a specific polymer. The polymerization average molecular weight of the plasticizer is preferably 500 or more and less than 10,000, more preferably 700 or more and less than 5,000, and particularly preferably 800 or more and less than 4,000, from the viewpoint of imparting plasticity. The plasticizer is not particularly limited as long as it is compatible with a specific polymer and exhibits plasticity. From the viewpoint of imparting plasticity, the plasticizer preferably has an alkylene group in the molecule. The alkylene oxide group contained in the plasticizer preferably has the following structure.

[化5] [Chemical 5]

所述式中,R為碳數2~8的烷基,n表示1~50的整數。*表示與其他原子的鍵結部位。In the above formula, R is an alkyl group having 2 to 8 carbon atoms, and n is an integer of 1 to 50. * indicates the bonding site with other atoms.

此外,例如,即便是具有所述伸烷基氧基的化合物(設為「化合物X」),在與不含化合物X而形成的正型感光性樹脂組成物相比,將化合物X、特定聚合體及光酸產生劑混合而獲得的正型感光性樹脂組成物的可塑性不提高的情況下,亦不符合本發明中的塑化劑。例如,任意添加的界面活性劑僅使用小於通常固體成分的1重量%的量,另外其多數聚集於膜表面,不會對組成物帶來可塑性,因此即便重量平均分子量小於特定聚合體,亦不符合本發明中的塑化劑。Further, for example, even in the case of the compound having the alkyleneoxy group ("Compound X"), the compound X is specifically polymerized as compared with the positive photosensitive resin composition formed without the compound X. When the plasticity of the positive photosensitive resin composition obtained by mixing the body and the photoacid generator is not improved, the plasticizer in the present invention is not satisfied. For example, the arbitrarily added surfactant is used in an amount of less than 1% by weight of the usual solid content, and most of it is concentrated on the surface of the film without imparting plasticity to the composition, so even if the weight average molecular weight is smaller than the specific polymer, It is in accordance with the plasticizer in the present invention.

本發明中可使用的塑化劑例如可列舉具有下述結構的化合物,但並不限定於該些化合物。The plasticizer which can be used in the present invention is, for example, a compound having the following structure, but is not limited to these compounds.

[化6] [Chemical 6]

<光酸產生劑> 本發明中的正型感光性樹脂層含有光酸產生劑。本發明中使用的光酸產生劑為可藉由照射紫外線、遠紫外線、X射線、帶電粒子束等放射線而產生酸的化合物。 本發明中使用的光酸產生劑較佳為對波長300 nm以上、較佳為波長300 nm~450 nm的光化射線進行感應而產生酸的化合物,但對其化學結構並無限制。另外,關於對波長300 nm以上的光化射線並不直接感應的光酸產生劑,若為藉由與增感劑併用而對波長300 nm以上的光化射線進行感應而產生酸的化合物,則亦可與增感劑組合而較佳地使用。藉由放射線的照射而產生的酸的pKa的值較佳為4.0以下,尤佳為3.0以下。下限值並無特別限定,例如可設為-10.0以上。<Photoacid generator> The positive photosensitive resin layer in the present invention contains a photoacid generator. The photoacid generator used in the present invention is a compound which can generate an acid by irradiation with radiation such as ultraviolet rays, far ultraviolet rays, X rays, or charged particle beams. The photoacid generator used in the present invention is preferably a compound which induces an acid to be irradiated with an actinic ray having a wavelength of 300 nm or more, preferably 300 nm to 450 nm, but has no chemical structure. In addition, a photoacid generator which does not directly induce actinic rays having a wavelength of 300 nm or more is a compound which generates an acid by inducing an actinic ray having a wavelength of 300 nm or more by using a sensitizer in combination with a sensitizer. It can also be preferably used in combination with a sensitizer. The value of the pKa of the acid generated by the irradiation of radiation is preferably 4.0 or less, and more preferably 3.0 or less. The lower limit is not particularly limited and may be, for example, -10.0 or more.

光酸產生劑可列舉離子性光酸產生劑、及非離子性光酸產生劑。Examples of the photoacid generator include an ionic photoacid generator and a nonionic photoacid generator.

非離子性光酸產生劑的例子可列舉:三氯甲基-均三嗪類、重氮甲烷化合物、醯亞胺磺酸酯化合物、以及肟磺酸酯化合物等。該些化合物中,就絕緣性的觀點而言,光酸產生劑較佳為肟磺酸酯化合物。該些光酸產生劑可單獨使用一種或者將兩種以上組合使用。三氯甲基-均三嗪類、以及重氮甲烷衍生物的具體例可例示日本專利特開2011-221494號公報的段落編號0083~0088中記載的化合物。Examples of the nonionic photoacid generator include trichloromethyl-s-triazines, diazomethane compounds, sulfhydrazine sulfonate compounds, and oxime sulfonate compounds. Among these compounds, the photoacid generator is preferably an oxime sulfonate compound from the viewpoint of insulating properties. These photoacid generators may be used alone or in combination of two or more. Specific examples of the trichloromethyl-s-triazines and the diazomethane derivatives include the compounds described in paragraphs 0083 to 0088 of JP-A-2011-221494.

肟磺酸酯化合物、即具有肟磺酸酯結構的化合物可較佳地例示含有下述式(B1)所表示的肟磺酸酯結構的化合物,該些內容併入本申請案說明書中。The oxime sulfonate compound, that is, the compound having an oxime sulfonate structure, is preferably exemplified by a compound containing an oxime sulfonate structure represented by the following formula (B1), which is incorporated in the specification of the present application.

[化7] [Chemistry 7]

式(B1)中,R21 表示烷基或芳基。*表示與其他原子或者其他基團的鍵結部位。In the formula (B1), R 21 represents an alkyl group or an aryl group. * indicates a bonding site with other atoms or other groups.

含有式(B1)所表示的肟磺酸酯結構的化合物的任一基團均可被取代,R21 中的烷基可為直鏈狀,可為分支狀,亦可為環狀。以下對所容許的取代基進行說明。 R21 的烷基較佳為碳數1~10的直鏈狀或分支狀烷基。R21 的烷基可經碳數6~11的芳基、碳數1~10的烷氧基、或者環烷基(包含7,7-二甲基-2-氧代降冰片基等橋接式脂環基,較佳為雙環烷基等)所取代。 R21 的芳基較佳為碳數6~11的芳基,更佳為苯基或萘基。R21 的芳基亦可經低級烷基、烷氧基或鹵素原子所取代。Any group of the compound containing the oxime sulfonate structure represented by the formula (B1) may be substituted, and the alkyl group in R 21 may be linear, may be branched, or may be cyclic. The permitted substituents will be described below. The alkyl group of R 21 is preferably a linear or branched alkyl group having 1 to 10 carbon atoms. The alkyl group of R 21 may be a bridged type such as an aryl group having 6 to 11 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, or a cycloalkyl group (including 7,7-dimethyl-2-oxonorbornyl group) An alicyclic group, preferably a bicycloalkyl group, is substituted. The aryl group of R 21 is preferably an aryl group having 6 to 11 carbon atoms, more preferably a phenyl group or a naphthyl group. The aryl group of R 21 may also be substituted with a lower alkyl group, an alkoxy group or a halogen atom.

含有式(B1)所表示的肟磺酸酯結構的化合物亦較佳為下述式(B2)所表示的肟磺酸酯化合物。The compound containing the oxime sulfonate structure represented by the formula (B1) is also preferably an oxime sulfonate compound represented by the following formula (B2).

[化8] [化8]

式(B2)中,R42 表示烷基或芳基,X10 表示烷基、烷氧基、或者鹵素原子,m4表示0~3的整數,當m4為2或3時,多個X10 可相同亦可不同。In the formula (B2), R 42 represents an alkyl group or an aryl group, X 10 represents an alkyl group, an alkoxy group or a halogen atom, m4 represents an integer of 0 to 3, and when m4 is 2 or 3, a plurality of X 10 may be The same can be different.

作為X10 的烷基較佳為碳數1~4的直鏈狀或者分支狀烷基。作為X10 的烷氧基較佳為碳數1~4的直鏈狀或者分支狀烷氧基。 作為X10 的鹵素原子較佳為氯原子或氟原子。m4較佳為0或1。式(B2)中,特佳為m4為1,X10 為甲基,X10 的取代位置為鄰位,R42 為碳數1~10的直鏈狀烷基、7,7-二甲基-2-氧代降冰片基甲基、或者對甲苯甲醯基的化合物。The alkyl group of X 10 is preferably a linear or branched alkyl group having 1 to 4 carbon atoms. The alkoxy group of X 10 is preferably a linear or branched alkoxy group having 1 to 4 carbon atoms. The halogen atom as X 10 is preferably a chlorine atom or a fluorine atom. M4 is preferably 0 or 1. In formula (B2), particularly preferably m4 is 1, X-10 is a methyl group, X-10 is substituted for the ortho position, R 42 is a C 1-4 straight chain alkyl group having 1 to 10, 7,7-dimethyl a compound of 2-oxo norbornylmethyl or p-tolylmethyl.

含有式(B1)所表示的肟磺酸酯結構的化合物亦較佳為下述式(B3)所表示的肟磺酸酯化合物。The compound containing the oxime sulfonate structure represented by the formula (B1) is also preferably an oxime sulfonate compound represented by the following formula (B3).

[化9] [Chemistry 9]

式(B3)中,R43 與式(B2)中的R42 為相同含義,X11 表示鹵素原子、羥基、碳數1~4的烷基、碳數1~4的烷氧基、氰基或者硝基,n4表示0~5的整數。In the formula (B3), R 43 has the same meaning as R 42 in the formula (B2), and X 11 represents a halogen atom, a hydroxyl group, an alkyl group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms, or a cyano group. Or a nitro group, and n4 represents an integer of 0-5.

式(B3)中的R43 較佳為甲基、乙基、正丙基、正丁基、正辛基、三氟甲基、五氟乙基、全氟-正丙基、全氟-正丁基、對甲苯基、4-氯苯基或者五氟苯基,特佳為正辛基。 X1 較佳為碳數1~5的烷氧基,更佳為甲氧基。 n4較佳為0~2,特佳為0~1。R 43 in the formula (B3) is preferably methyl, ethyl, n-propyl, n-butyl, n-octyl, trifluoromethyl, pentafluoroethyl, perfluoro-n-propyl, perfluoro-positive Butyl, p-tolyl, 4-chlorophenyl or pentafluorophenyl, particularly preferably n-octyl. X 1 is preferably an alkoxy group having 1 to 5 carbon atoms, more preferably a methoxy group. N4 is preferably 0 to 2, and particularly preferably 0 to 1.

式(B3)所表示的化合物的具體例可列舉:α-(甲基磺醯氧基亞胺基)苄甲腈、α-(乙基磺醯氧基亞胺基)苄甲腈、α-(正丙基磺醯氧基亞胺基)苄甲腈、α-(正丁基磺醯氧基亞胺基)苄甲腈、α-(4-甲苯磺醯氧基亞胺基)苄甲腈、α-[(甲基磺醯氧基亞胺基)-4-甲氧基苯基]乙腈、α-[(乙基磺醯氧基亞胺基)-4-甲氧基苯基]乙腈、α-[(正丙基磺醯氧基亞胺基)-4-甲氧基苯基]乙腈、α-[(正丁基磺醯氧基亞胺基)-4-甲氧基苯基]乙腈、α-[(4-甲苯磺醯氧基亞胺基)-4-甲氧基苯基]乙腈。Specific examples of the compound represented by the formula (B3) include α-(methylsulfonyloxyimino)benzylcarbonitrile, α-(ethylsulfonyloxyimino)benzylcarbonitrile, and α- (n-propylsulfonyloxyimido)benzylcarbonitrile, α-(n-butylsulfonyloxyimino)benzylcarbonitrile, α-(4-toluenesulfonyloxyimino)benzyl Nitrile, α-[(methylsulfonyloxyimino)-4-methoxyphenyl]acetonitrile, α-[(ethylsulfonyloxyimino)-4-methoxyphenyl] Acetonitrile, α-[(n-propylsulfonyloxyimino)-4-methoxyphenyl]acetonitrile, α-[(n-butylsulfonyloxyimino)-4-methoxybenzene Acetonitrile, α-[(4-toluenesulfonyloxyimino)-4-methoxyphenyl]acetonitrile.

較佳的肟磺酸酯化合物的具體例可列舉下述化合物(i)~化合物(viii)等,可單獨使用一種、或者併用兩種以上。化合物(i)~化合物(viii)可作為市售品而獲取。另外,亦可與其他種類的光酸產生劑組合使用。Specific examples of the preferable oxime sulfonate compound include the following compounds (i) to (viii), and the like, and may be used alone or in combination of two or more. The compound (i) to the compound (viii) can be obtained as a commercial product. In addition, it can also be used in combination with other types of photoacid generators.

[化10] [化10]

含有式(B1)所表示的肟磺酸酯結構的化合物亦較佳為下述式(OS-1)所表示的化合物。The compound containing the oxime sulfonate structure represented by the formula (B1) is also preferably a compound represented by the following formula (OS-1).

式(OS-1) [化11] Formula (OS-1) [Chem. 11]

式(OS-1)中,R411 表示氫原子、烷基、烯基、烷氧基、烷氧基羰基、醯基、胺甲醯基、胺磺醯基、磺基、氰基、芳基、或者雜芳基。R412 表示烷基、或者芳基。 X401 表示-O-、-S-、-NH-、-NR415 -、-CH2 -、-CR416 H-、或者-CR415 R417 -,R415 ~R417 表示烷基、或者芳基。 R421 ~R424 分別獨立地表示氫原子、鹵素原子、烷基、烯基、烷氧基、胺基、烷氧基羰基、烷基羰基、芳基羰基、醯胺基、磺基、氰基、或者芳基。R421 ~R424 中的2個亦可分別相互鍵結而形成環。 R421 ~R424 較佳為氫原子、鹵素原子以及烷基,另外另外,亦可較佳地列舉R421 ~R424 中的至少2個相互鍵結而形成芳基的形態。其中,就感度的觀點而言,較佳為R421 ~R424 均為氫原子的形態。 已述的官能基均可更具有取代基。In the formula (OS-1), R 411 represents a hydrogen atom, an alkyl group, an alkenyl group, an alkoxy group, an alkoxycarbonyl group, a decyl group, an amine carbaryl group, an amine sulfonyl group, a sulfo group, a cyano group or an aryl group. Or a heteroaryl group. R 412 represents an alkyl group or an aryl group. X 401 represents -O-, -S-, -NH-, -NR 415 -, -CH 2 -, -CR 416 H-, or -CR 415 R 417 -, and R 415 to R 417 represent an alkyl group or an aromatic group. base. R 421 to R 424 each independently represent a hydrogen atom, a halogen atom, an alkyl group, an alkenyl group, an alkoxy group, an amine group, an alkoxycarbonyl group, an alkylcarbonyl group, an arylcarbonyl group, a decylamino group, a sulfo group or a cyano group. Or aryl. Two of R 421 to R 424 may be bonded to each other to form a ring. R 421 to R 424 are preferably a hydrogen atom, a halogen atom or an alkyl group, and a form in which at least two of R 421 to R 424 are bonded to each other to form an aryl group is also preferable. Among them, from the viewpoint of sensitivity, it is preferred that R 421 to R 424 are each a hydrogen atom. The functional groups described may each have a more substituent.

式(OS-1)所表示的化合物更佳為下述式(OS-2)所表示的化合物。The compound represented by the formula (OS-1) is more preferably a compound represented by the following formula (OS-2).

式(OS-2) [化12] (OS-2) [Chemistry 12]

式(OS-2)中,R401 、R402 、R421 ~R424 分別與式(OS-1)中的該些為相同含義,另外,較佳例亦相同。 該些中,更佳為式(OS-1)及式(OS-2)中的R401 為氰基、或者芳基的形態,最佳為由式(OS-2)所表示且R401 為氰基、苯基或萘基的形態。In the formula (OS-2), R 401 , R 402 and R 421 to R 424 have the same meanings as those in the formula (OS-1), and the preferred examples are also the same. Among these, R 401 in the formula (OS-1) and the formula (OS-2) is preferably a cyano group or an aryl group, and is preferably represented by the formula (OS-2) and R 401 is The form of cyano, phenyl or naphthyl.

另外,肟磺酸酯化合物中,肟或者苯并噻唑環的立體結構(E,Z等)分別可為其中任一者,亦可為混合物。Further, in the oxime sulfonate compound, the steric structure (E, Z, etc.) of the hydrazine or the benzothiazole ring may be either one or a mixture.

本發明中可適合使用的式(OS-1)所表示的化合物的具體例可列舉日本專利特開2011-221494號公報的段落編號0128~0132中記載的化合物(例示化合物b-1~例示化合物b-34),但本發明並不限定於該些化合物。Specific examples of the compound represented by the formula (OS-1) which can be suitably used in the present invention include the compounds described in Paragraph Nos. 0128 to 0132 of JP-A-2011-221494 (exemplified compounds b-1 to exemplified compounds). B-34), but the invention is not limited to these compounds.

本發明中,含有式(B1)所表示的肟磺酸酯結構的化合物較佳為下述式(OS-3)、下述式(OS-4)或者下述式(OS-5)所表示的肟磺酸酯化合物。In the present invention, the compound containing the oxime sulfonate structure represented by the formula (B1) is preferably represented by the following formula (OS-3), the following formula (OS-4) or the following formula (OS-5). An oxime sulfonate compound.

[化13] [Chemistry 13]

式(OS-3)~式(OS-5)中,R22 、R25 及R28 分別獨立地表示烷基、芳基或者雜芳基,R23 、R26 及R29 分別獨立地表示氫原子、烷基、芳基或者鹵素原子,R24 、R27 及R30 分別獨立地表示鹵素原子、烷基、烷基氧基、磺酸基、胺基磺醯基或者烷氧基磺醯基,X1 ~X3 分別獨立地表示氧原子或者硫原子,n1 ~n3 分別獨立地表示1或2,m1 ~m3 分別獨立地表示0~6的整數。In the formulae (OS-3) to (OS-5), R 22 , R 25 and R 28 each independently represent an alkyl group, an aryl group or a heteroaryl group, and R 23 , R 26 and R 29 each independently represent hydrogen. An atom, an alkyl group, an aryl group or a halogen atom, and R 24 , R 27 and R 30 each independently represent a halogen atom, an alkyl group, an alkyloxy group, a sulfonic acid group, an aminosulfonyl group or an alkoxysulfonyl group. X 1 to X 3 each independently represent an oxygen atom or a sulfur atom, and n 1 to n 3 each independently represent 1 or 2, and m 1 to m 3 each independently represent an integer of 0 to 6.

式(OS-3)~式(OS-5)中,R22 、R25 及R28 中的烷基、芳基或者雜芳基可具有取代基。 式(OS-3)~式(OS-5)中,R22 、R25 及R28 中的烷基較佳為可具有取代基的總碳數1~30的烷基。In the formula (OS-3) to the formula (OS-5), the alkyl group, the aryl group or the heteroaryl group in R 22 , R 25 and R 28 may have a substituent. In the formula (OS-3) to the formula (OS-5), the alkyl group in R 22 , R 25 and R 28 is preferably an alkyl group having 1 to 30 carbon atoms in total which may have a substituent.

另外,式(OS-3)~式(OS-5)中,R22 、R25 及R28 中的芳基較佳為可具有取代基的總碳數6~30的芳基。Further, in the formulae (OS-3) to (OS-5), the aryl group in R 22 , R 25 and R 28 is preferably an aryl group having a total carbon number of 6 to 30 which may have a substituent.

另外,式(OS-3)~式(OS-5)中,R1 中的雜芳基較佳為可具有取代基的總碳數4~30的雜芳基。Further, in the formulae (OS-3) to (OS-5), the heteroaryl group in R 1 is preferably a heteroaryl group having a total carbon number of 4 to 30 which may have a substituent.

式(OS-3)~式(OS-5)中,R22 、R25 及R28 中的雜芳基只要至少1個環為雜芳香環即可,例如雜芳香環與苯環亦可縮環。In the formula (OS-3) to the formula (OS-5), the heteroaryl group in R 22 , R 25 and R 28 may be at least one ring which is a heteroaromatic ring, for example, the heteroaromatic ring and the benzene ring may be reduced. ring.

式(OS-3)~式(OS-5)中,R23 、R26 及R29 較佳為氫原子、烷基或芳基,更佳為氫原子或者烷基。 式(OS-3)~式(OS-5)中,化合物中存在2個以上的R23 、R26 及R29 中,較佳為1個或2個為烷基、芳基或者鹵素原子,更佳為1個為烷基、芳基或者鹵素原子,特佳為1個為烷基且其餘為氫原子。In the formulae (OS-3) to (OS-5), R 23 , R 26 and R 29 are preferably a hydrogen atom, an alkyl group or an aryl group, more preferably a hydrogen atom or an alkyl group. In the formula (OS-3) to the formula (OS-5), two or more of R 23 , R 26 and R 29 are present in the compound, and preferably one or two are an alkyl group, an aryl group or a halogen atom. More preferably, one is an alkyl group, an aryl group or a halogen atom, and particularly preferably one is an alkyl group and the remainder is a hydrogen atom.

R23 、R26 及R29 中的烷基較佳為可具有取代基的總碳數1~12的烷基,更佳為可具有取代基的總碳數1~6的烷基。The alkyl group in R 23 , R 26 and R 29 is preferably an alkyl group having 1 to 12 carbon atoms which may have a substituent, and more preferably an alkyl group having 1 to 6 carbon atoms which may have a substituent.

R23 、R26 及R29 中的芳基較佳為可具有取代基的總碳數6~30的芳基。The aryl group in R 23 , R 26 and R 29 is preferably an aryl group having 6 to 30 carbon atoms in total which may have a substituent.

式(OS-3)~式(OS-5)中,X1 ~X3 分別獨立地表示O或S,較佳為O。 式(OS-3)~式(OS-5)中,包含X1 ~X3 作為環員的環為5員環或6員環。 式(OS-3)~式(OS-5)中,n1 ~n3 分別獨立地表示1或2,於X1 ~X3 為O的情況下,n1 ~n3 分別獨立地較佳為1,另外,於X1 ~X3 為S的情況下,n1 ~n3 分別獨立地較佳為2。In the formulae (OS-3) to (OS-5), X 1 to X 3 each independently represent O or S, and is preferably O. In the formula (OS-3) to the formula (OS-5), the ring including X 1 to X 3 as a ring member is a 5-membered ring or a 6-membered ring. In the formulae (OS-3) to (OS-5), n 1 to n 3 each independently represent 1 or 2. When X 1 to X 3 are 0, n 1 to n 3 are each independently preferably. In the case where X 1 to X 3 are S, n 1 to n 3 are each independently preferably 2.

式(OS-3)~式(OS-5)中,R24 、R27 及R30 分別獨立地表示鹵素原子、烷基、烷基氧基、磺酸基、胺基磺醯基或者烷氧基磺醯基。其中,R24 、R27 及R30 分別獨立地較佳為烷基或者烷基氧基。 R24 、R27 及R30 中的烷基、烷基氧基、磺酸基、胺基磺醯基及烷氧基磺醯基可具有取代基。 式(OS-3)~式(OS-5)中,R24 、R27 及R30 中的烷基較佳為可具有取代基的總碳數1~30的烷基。In the formulae (OS-3) to (OS-5), R 24 , R 27 and R 30 each independently represent a halogen atom, an alkyl group, an alkyloxy group, a sulfonic acid group, an aminosulfonyl group or an alkoxy group. Sulfosyl group. Wherein R 24 , R 27 and R 30 are each independently preferably an alkyl group or an alkyloxy group. The alkyl group, the alkyloxy group, the sulfonic acid group, the aminosulfonyl group and the alkoxysulfonyl group in R 24 , R 27 and R 30 may have a substituent. In the formula (OS-3) to the formula (OS-5), the alkyl group in R 24 , R 27 and R 30 is preferably an alkyl group having 1 to 30 total carbon atoms which may have a substituent.

式(OS-3)~式(OS-5)中,R24 、R27 及R30 中的烷基氧基較佳為可具有取代基的總碳數1~30的烷基氧基。In the formula (OS-3) to the formula (OS-5), the alkyloxy group in R 24 , R 27 and R 30 is preferably an alkyloxy group having a total carbon number of from 1 to 30 which may have a substituent.

另外,式(OS-3)~式(OS-5)中,m1 ~m3 分別獨立地表示0~6的整數,較佳為0~2的整數,更佳為0或1,特佳為0。 另外,關於式(OS-3)~式(OS-5)的各自的取代基,日本專利特開2011-221494號公報的段落編號0092~0109中記載的(OS-3)~(OS-5)的取代基的較佳範圍亦同樣較佳。Further, in the formulae (OS-3) to (OS-5), m 1 to m 3 each independently represent an integer of 0 to 6, preferably an integer of 0 to 2, more preferably 0 or 1, particularly preferably Is 0. In addition, each of the substituents of the formula (OS-3) to the formula (OS-5) is (OS-3) to (OS-5) described in paragraphs 0092 to 0109 of JP-A-2011-221494. The preferred range of substituents is also preferred.

另外,含有式(B1)所表示的肟磺酸酯結構的化合物特佳為下述式(OS-6)~式(OS-11)的任一者所表示的肟磺酸酯化合物。In addition, the compound containing the oxime sulfonate structure represented by the formula (B1) is particularly preferably an oxime sulfonate compound represented by any one of the following formulae (OS-6) to (OS-11).

[化14] [Chemistry 14]

式(OS-6)~式(OS-11)中,R301 ~R306 分別獨立地表示烷基、芳基或者雜芳基,R307 表示氫原子或者溴原子,R308 ~R310 、R313 、R316 及R318 分別獨立地表示氫原子、碳數1~8的烷基、鹵素原子、氯甲基、溴甲基、溴乙基、甲氧基甲基、苯基或者氯苯基,R311 及R314 分別獨立地表示氫原子、鹵素原子、甲基或者甲氧基,R312 、R315 、R317 及R319 分別獨立地表示表示氫原子或甲基。In the formulae (OS-6) to (OS-11), R 301 to R 306 each independently represent an alkyl group, an aryl group or a heteroaryl group, and R 307 represents a hydrogen atom or a bromine atom, and R 308 to R 310 and R; 313 , R 316 and R 318 each independently represent a hydrogen atom, an alkyl group having 1 to 8 carbon atoms, a halogen atom, a chloromethyl group, a bromomethyl group, a bromoethyl group, a methoxymethyl group, a phenyl group or a chlorophenyl group. R 311 and R 314 each independently represent a hydrogen atom, a halogen atom, a methyl group or a methoxy group, and R 312 , R 315 , R 317 and R 319 each independently represent a hydrogen atom or a methyl group.

式(OS-6)~式(OS-11)中的較佳範圍與日本專利特開2011-221494號公報的段落編號0110~0112中記載的(OS-6)~(OS-11)的較佳範圍相同。The preferred range of the formula (OS-6) to the formula (OS-11) is compared with (OS-6) to (OS-11) described in paragraphs 0110 to 0112 of JP-A-2011-221494. The best range is the same.

式(OS-3)~式(OS-5)所表示的肟磺酸酯化合物的具體例可列舉日本專利特開2011-221494號公報的段落編號0114~0120中記載的化合物,但本發明並不限定於該些化合物。Specific examples of the oxime sulfonate compound represented by the formula (OS-3) to the formula (OS-5) include the compounds described in Paragraph Nos. 0114 to 0120 of JP-A-2011-221494, but the present invention It is not limited to these compounds.

正型感光性樹脂層中,相對於正型感光性樹脂層中的總樹脂成分(較佳為總固體成分,更佳為聚合體的合計)100質量份,非離子性光酸產生劑較佳為使用0.1質量份~10質量份,更佳為使用0.5質量份~10質量份。亦可併用兩種以上。In the positive photosensitive resin layer, the nonionic photoacid generator is preferably 100 parts by mass based on the total resin component (preferably the total solid content, more preferably the total of the polymer) in the positive photosensitive resin layer. It is more preferably used in an amount of from 0.1 part by mass to 10 parts by mass, even more preferably from 0.5 part by mass to 10 parts by mass. It is also possible to use two or more types together.

離子性光酸產生劑的例子可列舉:二芳基錪鹽類、三芳基鋶鹽類、四級銨鹽類等。該些化合物中,較佳為三芳基鋶鹽類及二芳基錪鹽類。Examples of the ionic photoacid generator include diarylsulfonium salts, triarylsulfonium salts, and quaternary ammonium salts. Among these compounds, triarylsulfonium salts and diarylsulfonium salts are preferred.

作為離子性光酸產生劑來使用的三芳基鋶鹽類是由下述式(1)所表示。The triarylsulfonium salt used as the ionic photoacid generator is represented by the following formula (1).

[化15] [化15]

式(1)中,R505 、R506 及R507 分別表示可具有取代基的烷基或者芳香族基,於烷基的情況下,亦可相互連結而形成環;X- 表示共軛鹽基。In the formula (1), R 505 , R 506 and R 507 each represent an alkyl group or an aromatic group which may have a substituent, and in the case of an alkyl group, may be bonded to each other to form a ring; X - represents a conjugated salt group. .

R505 、R506 及R507 中的烷基較佳為碳數1~10的烷基,亦可具有取代基。如上所述的烷基可列舉:甲基、乙基、丙基、異丙基、丁基、第三丁基、戊基、新戊基、己基、環己基、庚基、辛基等。其中,較佳為甲基、乙基、或者第三丁基。另外,R505 、R506 及R507 中,於2個以上為烷基的情況下,較佳為該2個以上的烷基相互連結而形成環,如上所述的環形態為包含硫原子的形式,較佳為5員環(硫雜環戊烷)、以及6員環(硫雜環己烷)。 R505 、R506 及R507 中的芳香族基較佳為碳數6~30的芳香族基,亦可具有取代基。如上所述的芳香族基可列舉:苯基、萘基、4-甲氧基苯基、4-氯苯基、4-甲基苯基、4-第三丁基苯基、4-苯硫基苯基、2,4,6-三甲基苯基、4-甲氧基-1-萘基、或者4-(4'-二苯基鋶基苯硫基)苯基。 另外,式(1)所表示的離子性光酸產生劑亦可以R505 ~R507 的任一者來鍵結,形成二聚體等多聚體。例如,4-(4'-二苯基鋶基苯硫基)苯基為二聚體的一例,4-(4'-二苯基鋶基苯硫基)苯基中的抗衡陰離子與X- 相同。The alkyl group in R 505 , R 506 and R 507 is preferably an alkyl group having 1 to 10 carbon atoms, and may have a substituent. The alkyl group as described above may, for example, be methyl, ethyl, propyl, isopropyl, butyl, tert-butyl, pentyl, neopentyl, hexyl, cyclohexyl, heptyl, octyl or the like. Among them, a methyl group, an ethyl group or a tert-butyl group is preferred. Further, in the case where two or more of R 505 , R 506 and R 507 are an alkyl group, it is preferred that the two or more alkyl groups are bonded to each other to form a ring, and the ring form as described above contains a sulfur atom. The form is preferably a 5-membered ring (thiolane) and a 6-membered ring (thiamethylene). The aromatic group in R 505 , R 506 and R 507 is preferably an aromatic group having 6 to 30 carbon atoms, and may have a substituent. Examples of the aromatic group as described above include a phenyl group, a naphthyl group, a 4-methoxyphenyl group, a 4-chlorophenyl group, a 4-methylphenyl group, a 4-tert-butylphenyl group, and a 4-phenylsulfuric acid. Phenylphenyl, 2,4,6-trimethylphenyl, 4-methoxy-1-naphthyl, or 4-(4'-diphenylmercaptophenylthio)phenyl. Further, the ionic photoacid generator represented by the formula (1) may be bonded by any of R 505 to R 507 to form a polymer such as a dimer. For example, 4- (4'-diphenyl sulfonium) phenyl is an example of the dimer, 4- (4'-diphenyl sulfonium phenylthio) phenyl counter anion of X - the same.

R505 、R506 及R507 中的烷基及芳香族基可具有的取代基較佳為芳香族基,具體而言特佳為苯基、4-甲氧基苯基、4-氯苯基、4-(4'-二苯基鋶基苯硫基)苯基。該些取代基亦可經取代基進一步取代。The substituent which the alkyl group and the aromatic group in R 505 , R 506 and R 507 may have is preferably an aromatic group, and particularly preferably a phenyl group, a 4-methoxyphenyl group or a 4-chlorophenyl group. 4-(4'-Diphenylmercaptophenylthio)phenyl. These substituents may also be further substituted with a substituent.

X- 中的共軛鹽基較佳為烷基磺酸的共軛鹽基、芳基磺酸的共軛鹽基、BY4 - (Y表示鹵素原子;以下亦同樣)、PY6 - 、AsY6 - 、SbY6 - 、或者下述式(3)或式(4)所表示的一價陰離子,特佳為烷基磺酸的共軛鹽基、芳基磺酸的共軛鹽基、PY6 - 、或者式(3)所表示的一價陰離子。The conjugated salt group in X - is preferably a conjugated salt group of an alkyl sulfonic acid, a conjugated salt group of an aryl sulfonic acid, BY 4 - (Y represents a halogen atom; the same applies hereinafter), PY 6 - , AsY 6 - , SbY 6 - or a monovalent anion represented by the following formula (3) or (4), particularly preferably a conjugated salt of an alkylsulfonic acid, a conjugated salt of an arylsulfonic acid, PY 6 - or a monovalent anion represented by the formula (3).

烷基磺酸及芳基磺酸的共軛鹽基較佳為碳數1~7的烷基磺酸的共軛鹽基,進而更佳為碳數1~4的烷基磺酸的共軛鹽基,若以酸的形式來表述,則例如特佳為甲磺酸、三氟甲磺酸、正丙磺酸、以及庚磺酸。 芳基磺酸的共軛鹽基若以酸的形式來表述,則例如可列舉苯磺酸、氯苯磺酸、以及對甲苯磺酸。The conjugated salt group of the alkylsulfonic acid and the arylsulfonic acid is preferably a conjugated salt of an alkylsulfonic acid having 1 to 7 carbon atoms, more preferably a conjugated alkylsulfonic acid having 1 to 4 carbon atoms. The salt group, if expressed in the form of an acid, is particularly preferably methanesulfonic acid, trifluoromethanesulfonic acid, n-propanesulfonic acid, and heptanesulfonic acid. The conjugated salt group of the arylsulfonic acid is represented by an acid, and examples thereof include benzenesulfonic acid, chlorobenzenesulfonic acid, and p-toluenesulfonic acid.

X- 中的BY4 - 、PY6 - 、AsY6 - 、SbY6 - 中的Y較佳為氟原子、氯原子,特佳為氟原子。The BY 4 - -, PY 6 -, AsY 6 -, SbY 6 - X in Y is preferably a fluorine atom, a chlorine atom, particularly preferably a fluorine atom.

[化16] [Chemistry 16]

式(3)及式(4)中,R521 、R522 及R523 分別獨立地表示碳原子數1~10的烷基、碳原子數1~10的具有氟原子的烷基、或者R521 與R522 相互以碳原子數2~6的伸烷基或者碳原子數2~6的具有氟原子的伸烷基來鍵結的環。In the formulae (3) and (4), R 521 , R 522 and R 523 each independently represent an alkyl group having 1 to 10 carbon atoms, an alkyl group having a fluorine atom of 1 to 10 carbon atoms, or R 521 . A ring in which R 522 is bonded to each other by an alkylene group having 2 to 6 carbon atoms or an alkylene group having a fluorine atom having 2 to 6 carbon atoms.

式(3)及式(4)中,R521 、R522 及R523 中的碳原子數1~10的烷基例如可列舉:甲基、乙基、丁基、第三丁基、環己基、辛基等。另外,碳原子數1~10的具有氟原子的烷基例如可列舉:三氟甲基、五氟乙基、七氟丙基、九氟丁基、十二氟戊基、全氟辛基等。該些基團中,R521 、R522 及R523 較佳為碳原子數1~10的具有氟原子的烷基,特佳為碳原子數1~6的具有氟原子的烷基。 式(3)及式(4)中,於R521 與R522 相互鍵結而形成環的情況下的碳原子數2~6的伸烷基可列舉:伸乙基、伸丙基、伸丁基、伸戊基、伸己基等。另外,碳原子數2~6的具有氟原子的伸烷基可列舉:四氟伸乙基、六氟伸丙基、八氟伸丁基、十氟伸戊基、十一氟伸己基等。該些基團中,於R521 與R522 相互鍵結而形成環的情況下,較佳為以碳原子數2~6的具有氟原子的伸烷基來鍵結,特佳為以碳原子數2~4的具有氟原子的伸烷基來鍵結。In the formula (3) and the formula (4), examples of the alkyl group having 1 to 10 carbon atoms in R 521 , R 522 and R 523 include a methyl group, an ethyl group, a butyl group, a tert-butyl group and a cyclohexyl group. , 辛基, etc. Further, examples of the alkyl group having a fluorine atom having 1 to 10 carbon atoms include a trifluoromethyl group, a pentafluoroethyl group, a heptafluoropropyl group, a nonafluorobutyl group, a dodecafluoropentyl group, a perfluorooctyl group, and the like. . In these groups, R 521 , R 522 and R 523 are preferably an alkyl group having a fluorine atom having 1 to 10 carbon atoms, particularly preferably an alkyl group having a fluorine atom having 1 to 6 carbon atoms. In the formula (3) and the formula (4), in the case where R 521 and R 522 are bonded to each other to form a ring, the alkylene group having 2 to 6 carbon atoms may be exemplified by an exoethyl group, a propyl group and a butyl group. Base, pentyl group, and hexyl group. Further, examples of the alkylene group having a fluorine atom having 2 to 6 carbon atoms include a tetrafluoroextension ethyl group, a hexafluoroextension propyl group, an octafluorobutylene butyl group, a decafluoropentyl group, and an undecafluorohexyl group. In these groups, when R 521 and R 522 are bonded to each other to form a ring, it is preferably bonded with an alkylene group having a fluorine atom of 2 to 6 carbon atoms, particularly preferably a carbon atom. A number of 2 to 4 alkyl groups having a fluorine atom are bonded.

另外,式(1)所表示的離子性光酸產生劑較佳為下述式(5)所表示的光酸產生劑。In addition, the ionic photoacid generator represented by the formula (1) is preferably a photoacid generator represented by the following formula (5).

[化17] [化17]

式中,R510 、R511 、R512 及R513 分別獨立地表示可具有取代基的烷基或者芳香族基,Ar3 及Ar4 分別獨立地表示可具有取代基的二價芳香族基,X1- 及X2- 分別獨立地表示共軛鹽基。In the formula, R 510 , R 511 , R 512 and R 513 each independently represent an alkyl group or an aromatic group which may have a substituent, and Ar 3 and Ar 4 each independently represent a divalent aromatic group which may have a substituent. X 1- and X 2- each independently represent a conjugated salt group.

R510 、R511 、R512 及R513 中的烷基及芳香族基與式(1)的R505 、R506 及R507 所表示的烷基及芳香族基為相同含義,較佳形態亦相同。另外,可具有的取代基亦相同。The alkyl group and the aromatic group in R 510 , R 511 , R 512 and R 513 have the same meanings as the alkyl group and the aromatic group represented by R 505 , R 506 and R 507 of the formula (1), and the preferred embodiment is also the same. In addition, the substituents which may be present are also the same.

X1- 及X2- 中的共軛鹽基與式(1)的X- 所表示的共軛鹽基為相同含義,較佳形態亦相同。The conjugated salt group in X 1- and X 2- has the same meaning as the conjugated salt group represented by X - in the formula (1), and the preferred embodiment is also the same.

Ar3 及Ar4 中的二價芳香族基較佳為伸苯基或伸萘基,特佳為伸苯基。The divalent aromatic group in Ar 3 and Ar 4 is preferably a phenylene group or a naphthyl group, and particularly preferably a phenyl group.

作為離子性光酸產生劑來使用的三芳基鋶鹽類的具體例可列舉:三苯基鋶三氟甲磺酸鹽、三苯基鋶三氟乙酸鹽、4-甲氧基苯基二苯基鋶三氟甲磺酸鹽、4-甲氧基苯基二苯基鋶三氟乙酸鹽、4-苯硫基苯基二苯基鋶三氟甲磺酸鹽或者4-苯硫基苯基二苯基鋶三氟乙酸鹽等。 市售的化合物可列舉:TPS-102、103、105、106、109、300、1000,MDS-103、105、109、205、209,BDS-109,DTS-103、105,MNPS-109,HDS-109(以上,綠化學公司製造);GSID-26-1、希樂固(Cyracure)UVI-6976(以上,巴斯夫(BASF)公司製造)。Specific examples of the triarylsulfonium salt used as the ionic photoacid generator include triphenylsulfonium trifluoromethanesulfonate, triphenylsulfonium trifluoroacetate, and 4-methoxyphenyldiphenyl. Based on trifluoromethanesulfonate, 4-methoxyphenyldiphenylphosphonium trifluoroacetate, 4-phenylthiophenyldiphenylphosphonium trifluoromethanesulfonate or 4-phenylthiophenyl Diphenylphosphonium trifluoroacetate and the like. Commercially available compounds include: TPS-102, 103, 105, 106, 109, 300, 1000, MDS-103, 105, 109, 205, 209, BDS-109, DTS-103, 105, MNPS-109, HDS -109 (above, manufactured by Green Chemical Co., Ltd.); GSID-26-1, Cyracure UVI-6976 (above, BASF).

作為離子性光酸產生劑而使用的二芳基錪鹽類是由下述式(2)的式所表示。The diarylsulfonium salt used as the ionic photoacid generator is represented by the formula of the following formula (2).

[化18] [化18]

式(2)中,R508 及R509 分別獨立地表示可具有取代基的芳香族基,X- 表示共軛鹽基。In the formula (2), R 508 and R 509 each independently represent an aromatic group which may have a substituent, and X - represents a conjugated salt group.

式(2)中,R508 及R509 中的芳香族基與式(1)的R505 、R506 及R507 所表示的芳香族基為相同含義,較佳形態亦相同。 式(2)中,X1- 中的共軛鹽基與式(1)的X- 所表示的共軛鹽基為相同含義,較佳形態亦相同。 另外,式(2)所表示的光酸產生劑亦可以R508 ~R509 來鍵結,形成二聚體等多聚體。例如,4-(4'-二苯基鋶基苯硫基)苯基為二聚體的一例,4-(4'-二苯基鋶基苯硫基)苯基中的抗衡陰離子與X- 相同。In the formula (2), the aromatic group in R 508 and R 509 has the same meaning as the aromatic group represented by R 505 , R 506 and R 507 in the formula (1), and the preferred embodiment is also the same. In the formula (2), the conjugated salt group in X 1- has the same meaning as the conjugated salt group represented by X - in the formula (1), and the preferred embodiment is also the same. Further, the photoacid generator represented by the formula (2) may be bonded to R 508 to R 509 to form a polymer such as a dimer. For example, 4- (4'-diphenyl sulfonium) phenyl is an example of the dimer, 4- (4'-diphenyl sulfonium phenylthio) phenyl counter anion of X - the same.

作為離子性光酸產生劑來使用的二芳基錪鹽類的具體例可列舉:二苯基錪三氟乙酸鹽、二苯基錪三氟甲磺酸鹽、4-甲氧基苯基苯基錪三氟甲磺酸鹽、4-甲氧基苯基苯基錪三氟乙酸鹽、苯基,4-(2'-羥基-1'-十四烷氧基)苯基錪三氟甲磺酸鹽、4-(2'-羥基-1'-十四烷氧基)苯基錪六氟銻酸鹽、苯基,4-(2'-羥基-1'-十四烷氧基)苯基錪-對甲苯磺酸鹽等。 市售的化合物可列舉:DPI-105、106、109、201,BI-105,MPI-105、106、109,BBI-102、103、105、106、109、110、201、300、301(以上,綠化學公司製造)。Specific examples of the diarylsulfonium salt used as the ionic photoacid generator include diphenylsulfonium trifluoroacetate, diphenylsulfonium trifluoromethanesulfonate, and 4-methoxyphenylbenzene. Base trifluoromethanesulfonate, 4-methoxyphenylphenylphosphonium trifluoroacetate, phenyl, 4-(2'-hydroxy-1'-tetradecyloxy)phenylfluorene trifluoromethyl Sulfonate, 4-(2'-hydroxy-1'-tetradecyloxy)phenylphosphonium hexafluoroantimonate, phenyl, 4-(2'-hydroxy-1'-tetradecyloxy) Phenylhydrazine-p-toluenesulfonate and the like. Commercially available compounds include DPI-105, 106, 109, 201, BI-105, MPI-105, 106, 109, BBI-102, 103, 105, 106, 109, 110, 201, 300, 301 (above) , manufactured by Green Chemical Company).

作為離子性光酸產生劑而使用的四級銨鹽類的具體例可列舉:四甲基銨丁基三(2,6-二氟苯基)硼酸鹽、四甲基銨己基三(對氯苯基)硼酸鹽、四甲基銨己基三(3-三氟甲基苯基)硼酸鹽、苄基二甲基苯基銨丁基三(2,6-二氟苯基)硼酸鹽、苄基二甲基苯基銨己基三(對氯苯基)硼酸鹽、苄基二甲基苯基銨己基三(3-三氟甲基苯基)硼酸鹽等。Specific examples of the quaternary ammonium salt used as the ionic photoacid generator include tetramethylammonium butyl tris(2,6-difluorophenyl)borate and tetramethylammonium hexyltris(p-chlorochloride). Phenyl)borate, tetramethylammonium hexyltris(3-trifluoromethylphenyl)borate, benzyldimethylphenylammonium butyl tris(2,6-difluorophenyl)borate, benzyl Dimethylphenylammonium hexyltris(p-chlorophenyl)borate, benzyldimethylphenylammonium hexyltris(3-trifluoromethylphenyl)borate, and the like.

除了具體例以外,光酸產生劑的具體例可列舉如以下所述的化合物,但本發明中使用的光酸產生劑並不限定於該些化合物。 [化19] Specific examples of the photoacid generator include the following compounds, but the photoacid generator used in the present invention is not limited to these compounds. [Chemistry 19]

[化20] [Chemistry 20]

[化21] [Chem. 21]

相對於聚合體成分100質量份,正型感光性樹脂層中的光酸產生劑的含量較佳為0.1質量份~10質量份,更佳為0.5質量份~5質量份。若光酸產生劑的含量為0.1質量份以上,則容易獲得所需的感度(高感度化),另外,若為10質量份以下,則容易確保塗膜的透明性。The content of the photoacid generator in the positive photosensitive resin layer is preferably from 0.1 part by mass to 10 parts by mass, more preferably from 0.5 part by mass to 5 parts by mass, per 100 parts by mass of the polymer component. When the content of the photo-acid generator is 0.1 part by mass or more, the desired sensitivity (high sensitivity) is easily obtained, and when it is 10 parts by mass or less, the transparency of the coating film is easily ensured.

<溶劑> 用以形成正型感光性樹脂層的正型感光性樹脂組成物(以下有稱為「感光性樹脂組成物」的情況)較佳為製備成將用以形成正型感光性樹脂層的成分溶解於溶劑中的溶液。 用以形成正型感光性樹脂層的正型感光性樹脂組成物中使用的溶劑可使用公知的溶劑,可例示:乙二醇單烷基醚類、乙二醇二烷基醚類、乙二醇單烷基醚乙酸酯類、丙二醇單烷基醚類、丙二醇二烷基醚類、丙二醇單烷基醚乙酸酯類、二乙二醇二烷基醚類、二乙二醇單烷基醚乙酸酯類、二丙二醇單烷基醚類、二丙二醇二烷基醚類、二丙二醇單烷基醚乙酸酯類、酯類、酮類、醯胺類、內酯類等。另外,用以形成正型感光性樹脂層的正型感光性樹脂組成物中使用的溶劑的具體例亦可列舉日本專利特開2011-221494號公報的段落編號0174~0178中記載的溶劑,該些內容併入本說明書中。<Solvent> A positive photosensitive resin composition for forming a positive photosensitive resin layer (hereinafter referred to as a "photosensitive resin composition") is preferably prepared to form a positive photosensitive resin layer. A solution of the component dissolved in a solvent. A known solvent can be used as the solvent used for the positive photosensitive resin composition for forming the positive photosensitive resin layer, and examples thereof include ethylene glycol monoalkyl ethers, ethylene glycol dialkyl ethers, and ethylene glycol. Alcohol monoalkyl ether acetates, propylene glycol monoalkyl ethers, propylene glycol dialkyl ethers, propylene glycol monoalkyl ether acetates, diethylene glycol dialkyl ethers, diethylene glycol monoalkyl ethers Acetate, dipropylene glycol monoalkyl ether, dipropylene glycol dialkyl ether, dipropylene glycol monoalkyl ether acetate, esters, ketones, guanamines, lactones, and the like. Further, a specific example of the solvent used in the positive photosensitive resin composition for forming the positive photosensitive resin layer is a solvent described in paragraphs 0174 to 0178 of JP-A-2011-221494. These are incorporated in this specification.

另外,亦可於該些溶劑中進而視需要來添加:苄基乙醚、二己醚、乙二醇單苯醚乙酸酯、二乙二醇單甲醚、二乙二醇單乙醚、異佛爾酮、己酸、辛酸、1-辛醇、1-壬醇、苄基醇、苯甲醚、乙酸苄酯、苯甲酸乙酯、乙二酸二乙酯、順丁烯二酸二乙酯、碳酸伸乙酯、碳酸伸丙酯等溶劑。該些溶劑可單獨使用一種或者將兩種以上混合使用。本發明中可使用的溶劑較佳為單獨使用一種、或者併用兩種,更佳為併用兩種,尤佳為將丙二醇單烷基醚乙酸酯類或丙二醇二烷基醚類、丙二醇二乙酸酯類與二乙二醇二烷基醚類或丁二醇烷基醚乙酸酯類併用。In addition, it may be further added to the solvents as needed: benzyl ether, dihexyl ether, ethylene glycol monophenyl ether acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, and different Buddha Ketone, caproic acid, caprylic acid, 1-octanol, 1-nonanol, benzyl alcohol, anisole, benzyl acetate, ethyl benzoate, diethyl oxalate, diethyl maleate , Ethyl carbonate, propyl carbonate and other solvents. These solvents may be used alone or in combination of two or more. The solvent which can be used in the present invention is preferably used singly or in combination of two or more. More preferably, it is preferably propylene glycol monoalkyl ether acetate or propylene glycol dialkyl ether or propylene glycol diacetate. It is used in combination with diethylene glycol dialkyl ether or butanediol alkyl ether acetate.

另外,溶劑較佳為沸點為130℃以上且小於160℃的溶劑、沸點為160℃以上的溶劑、或者該些溶劑的混合物。 沸點為130℃以上且小於160℃的溶劑可例示:丙二醇單甲醚乙酸酯(沸點146℃)、丙二醇單乙醚乙酸酯(沸點158℃)、丙二醇甲基-正丁醚(沸點155℃)、丙二醇甲基-正丙醚(沸點131℃)。 沸點為160℃以上的溶劑可例示:3-乙氧基丙酸乙酯(沸點170℃)、二乙二醇甲基乙醚(沸點176℃)、丙二醇單甲醚丙酸酯(沸點160℃)、二丙二醇甲醚乙酸酯(沸點213℃)、3-甲氧基丁醚乙酸酯(沸點171℃)、二乙二醇二乙醚(沸點189℃)、二乙二醇二甲醚(沸點162℃)、丙二醇二乙酸酯(沸點190℃)、二乙二醇單乙醚乙酸酯(沸點220℃)、二丙二醇二甲醚(沸點175℃)、1,3-丁二醇二乙酸酯(沸點232℃)。Further, the solvent is preferably a solvent having a boiling point of 130 ° C or more and less than 160 ° C, a solvent having a boiling point of 160 ° C or higher, or a mixture of such solvents. The solvent having a boiling point of 130 ° C or more and less than 160 ° C can be exemplified by propylene glycol monomethyl ether acetate (boiling point 146 ° C), propylene glycol monoethyl ether acetate (boiling point 158 ° C), propylene glycol methyl-n-butyl ether (boiling point 155 ° C) ), propylene glycol methyl-n-propyl ether (boiling point 131 ° C). The solvent having a boiling point of 160 ° C or higher can be exemplified by ethyl 3-ethoxypropionate (boiling point: 170 ° C), diethylene glycol methyl ethyl ether (boiling point: 176 ° C), and propylene glycol monomethyl ether propionate (boiling point: 160 ° C). , dipropylene glycol methyl ether acetate (boiling point 213 ° C), 3-methoxybutyl ether acetate (boiling point 171 ° C), diethylene glycol diethyl ether (boiling point 189 ° C), diethylene glycol dimethyl ether ( Boiling point 162 ° C), propylene glycol diacetate (boiling point 190 ° C), diethylene glycol monoethyl ether acetate (boiling point 220 ° C), dipropylene glycol dimethyl ether (boiling point 175 ° C), 1,3-butanediol II Acetate (boiling point 232 ° C).

相對於感光性樹脂組成物中的總樹脂成分100質量份,用以形成正型感光性樹脂層的正型感光性樹脂組成物中的溶劑的含量較佳為50質量份~95質量份,尤佳為60質量份~90質量份。The content of the solvent in the positive photosensitive resin composition for forming the positive photosensitive resin layer is preferably 50 parts by mass to 95 parts by mass, based on 100 parts by mass of the total resin component in the photosensitive resin composition. It is preferably 60 parts by mass to 90 parts by mass.

<增感劑> 本發明中的正型感光性樹脂層較佳為更包含增感劑。正型感光性樹脂層在與光酸產生劑的組合中,為了促進其分解,較佳為含有增感劑,特別是於使用非離子性光酸產生劑時,較佳為含有增感劑。增感劑吸收光化射線或者放射線而成為電子激發狀態。成為電子激發狀態的增感劑與光酸產生劑接觸而產生電子轉移、能量轉移、發熱等作用。藉此,光酸產生劑發生化學變化而分解,生成酸。 藉由含有增感劑,曝光感度進一步提高,另外,於使用可見光的吸收效率低的非離子性光酸產生劑的情況下,對曝光光源為g、h射線混合線的情況特別有效。<Sensitizer> The positive photosensitive resin layer in the present invention preferably further contains a sensitizer. In order to promote decomposition of the positive photosensitive resin layer in combination with a photoacid generator, it is preferable to contain a sensitizer, and in particular, when a nonionic photoacid generator is used, it is preferable to contain a sensitizer. The sensitizer absorbs actinic rays or radiation and becomes an electronically excited state. The sensitizer that is in an electronically excited state is brought into contact with the photoacid generator to cause electron transfer, energy transfer, heat generation, and the like. Thereby, the photoacid generator chemically changes and decomposes to form an acid. When the sensitizing agent is contained, the exposure sensitivity is further improved, and when a nonionic photoacid generator having low absorption efficiency of visible light is used, it is particularly effective when the exposure light source is a g or h-ray mixing line.

增感劑較佳為:蒽衍生物、吖啶酮衍生物、硫雜蒽酮衍生物、香豆素衍生物、鹼性苯乙烯基衍生物、二苯乙烯基苯衍生物,更佳為蒽衍生物。 蒽衍生物較佳為:蒽、9,10-二丁氧基蒽、9,10-二氯蒽、2-乙基-9,10-二甲氧基蒽、9-羥基甲基蒽、9-溴蒽、9-氯蒽、9,10-二溴蒽、2-乙基蒽、9,10-二甲氧基蒽。 吖啶酮衍生物較佳為:吖啶酮、N-丁基-2-氯吖啶酮、N-甲基吖啶酮、2-甲氧基吖啶酮、N-乙基-2-甲氧基吖啶酮。 硫雜蒽酮衍生物較佳為:硫雜蒽酮、二乙基硫雜蒽酮、1-氯-4-丙氧基硫雜蒽酮、2-氯硫雜蒽酮。 香豆素衍生物較佳為:香豆素-1、香豆素-6H、香豆素-110、香豆素-102。 鹼性苯乙烯基衍生物可列舉:2-(4-二甲基胺基苯乙烯基)苯并噁唑、2-(4-二甲基胺基苯乙烯基)苯并噻唑、2-(4-二甲基胺基苯乙烯基)萘并噻唑。 二苯乙烯基苯衍生物可列舉:二苯乙烯基苯、二(4-甲氧基苯乙烯基)苯、二(3,4,5-三甲氧基苯乙烯基)苯。The sensitizer is preferably an anthracene derivative, an acridone derivative, a thioxanthone derivative, a coumarin derivative, a basic styryl derivative, a distyrylbenzene derivative, more preferably ruthenium. derivative. The anthracene derivative is preferably: ruthenium, 9,10-dibutoxyanthracene, 9,10-dichloroanthracene, 2-ethyl-9,10-dimethoxyanthracene, 9-hydroxymethylanthracene, 9 - bromine, 9-chloropurine, 9,10-dibromofluorene, 2-ethylhydrazine, 9,10-dimethoxyfluorene. The acridone derivative is preferably: acridone, N-butyl-2-chloroacridone, N-methylacridone, 2-methoxyacridone, N-ethyl-2-methyl Oxyacridone. The thioxanthone derivative is preferably thiazinone, diethyl thiazinone, 1-chloro-4-propoxythiaxanone or 2-chlorothiazinone. The coumarin derivative is preferably: coumarin-1, coumarin-6H, coumarin-110, coumarin-102. Examples of the basic styryl derivative include 2-(4-dimethylaminostyryl)benzoxazole, 2-(4-dimethylaminostyryl)benzothiazole, 2-( 4-Dimethylaminostyryl)naphthylthiazole. The distyrylbenzene derivative may, for example, be distyrylbenzene, bis(4-methoxystyryl)benzene or bis(3,4,5-trimethoxystyryl)benzene.

增感劑的具體例可列舉為下述,但本發明並不限定於該些。此外,下述中,Me表示甲基,Et表示乙基,Bu表示丁基。Specific examples of the sensitizer include the following, but the present invention is not limited thereto. Further, in the following, Me represents a methyl group, Et represents an ethyl group, and Bu represents a butyl group.

[化22] [化22]

相對於聚合性成分100質量份,正型感光性樹脂層中的增感劑的含量較佳為0.1質量份~10質量份,更佳為0.5質量份~5質量份。藉由將增感劑的含量設為0.1質量份以上,容易獲得所需的感度,另外,藉由設為10質量份以下,容易確保塗膜的透明性。The content of the sensitizer in the positive photosensitive resin layer is preferably from 0.1 part by mass to 10 parts by mass, more preferably from 0.5 part by mass to 5 parts by mass, per 100 parts by mass of the polymerizable component. By setting the content of the sensitizer to 0.1 part by mass or more, it is easy to obtain the desired sensitivity, and by setting it to 10 parts by mass or less, it is easy to ensure the transparency of the coating film.

<鹼性化合物> 本發明中的正型感光性樹脂層較佳為更包含鹼性化合物。鹼性化合物可自化學增幅抗蝕劑所使用的鹼性化合物中任意選擇來使用。例如可列舉:脂肪族胺、芳香族胺、雜環式胺、氫氧化四級銨、羧酸的四級銨鹽等。該些化合物的具體例可列舉日本專利特開2011-221494號公報的段落編號0204~0207中記載的化合物,該些內容併入本說明書中。<Basic Compound> The positive photosensitive resin layer in the present invention preferably further contains a basic compound. The basic compound can be arbitrarily selected from the basic compounds used in the chemical amplification resist. For example, an aliphatic amine, an aromatic amine, a heterocyclic amine, a quaternary ammonium hydroxide, a quaternary ammonium salt of a carboxylic acid, etc. are mentioned. Specific examples of such a compound include the compounds described in Paragraph Nos. 0204 to 0207 of JP-A-2011-221494, the contents of which are incorporated herein by reference.

具體而言,脂肪族胺例如可列舉:三甲基胺、二乙基胺、三乙基胺、二-正丙基胺、三-正丙基胺、二-正戊基胺、三-正戊基胺、二乙醇胺、三乙醇胺、二環己基胺、二環己基甲基胺等。 芳香族胺例如可列舉:苯胺、苄基胺、N,N-二甲基苯胺、二苯基胺等。 雜環式胺例如可列舉:吡啶、2-甲基吡啶、4-甲基吡啶、2-乙基吡啶、4-乙基吡啶、2-苯基吡啶、4-苯基吡啶、N-甲基-4-苯基吡啶、4-二甲基胺基吡啶、咪唑、苯并咪唑、4-甲基咪唑、2-苯基苯并咪唑、2,4,5-三苯基咪唑、煙鹼、煙鹼酸、煙鹼酸醯胺、喹啉、8-氧基喹啉、吡嗪、吡唑、噠嗪、嘌呤、吡咯啶、哌啶、哌嗪、嗎啉系化合物、4-甲基嗎啉、1,5-二氮雜雙環[4.3.0]-5-壬烯、1,8-二氮雜雙環[5.3.0]-7-十一烯等。 氫氧化四級銨例如可列舉:氫氧化四甲基銨、氫氧化四乙基銨、氫氧化四-正丁基銨、氫氧化四-正己基銨等。 羧酸的四級銨鹽例如可列舉:乙酸四甲基銨、苯甲酸四甲基銨、乙酸四-正丁基銨、苯甲酸四-正丁基銨等。Specifically, examples of the aliphatic amine include trimethylamine, diethylamine, triethylamine, di-n-propylamine, tri-n-propylamine, di-n-pentylamine, and tri-positive. Amylamine, diethanolamine, triethanolamine, dicyclohexylamine, dicyclohexylmethylamine, and the like. Examples of the aromatic amine include aniline, benzylamine, N,N-dimethylaniline, and diphenylamine. Examples of the heterocyclic amine include pyridine, 2-methylpyridine, 4-methylpyridine, 2-ethylpyridine, 4-ethylpyridine, 2-phenylpyridine, 4-phenylpyridine, and N-methyl. 4-phenylpyridine, 4-dimethylaminopyridine, imidazole, benzimidazole, 4-methylimidazole, 2-phenylbenzimidazole, 2,4,5-triphenylimidazole, nicotine, Nicotinic acid, nicotinic acid decylamine, quinoline, 8-oxyquinoline, pyrazine, pyrazole, pyridazine, hydrazine, pyrrolidine, piperidine, piperazine, morpholino compound, 4-methyl? Porphyrin, 1,5-diazabicyclo[4.3.0]-5-pinene, 1,8-diazabicyclo[5.3.0]-7-undecene, and the like. Examples of the quaternary ammonium hydroxide include tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetra-n-butylammonium hydroxide, and tetra-n-hexylammonium hydroxide. Examples of the quaternary ammonium salt of the carboxylic acid include tetramethylammonium acetate, tetramethylammonium benzoate, tetra-n-butylammonium acetate, and tetra-n-butylammonium benzoate.

本發明中可使用的鹼性化合物可單獨使用一種,亦可併用兩種以上。The basic compounds which can be used in the present invention may be used alone or in combination of two or more.

相對於正型感光性樹脂層中的總固體成分100質量份,正型感光性樹脂層中的鹼性化合物的含量較佳為0.001質量份~5質量份,更佳為0.005質量份~3質量份。The content of the basic compound in the positive photosensitive resin layer is preferably 0.001 part by mass to 5 parts by mass, more preferably 0.005 part by mass to 3 parts by mass per 100 parts by mass of the total solid content of the positive photosensitive resin layer. Share.

<雜環狀化合物> 本發明中的正型感光性樹脂層較佳為含有包含雜環狀化合物的化合物。藉由添加雜環狀化合物,可使由正型感光性樹脂層所獲得的硬化膜成為更牢固的膜。 雜環狀化合物若除去聚合體成分,則並無特別限制。例如可添加:以下所述的分子內具有環氧基或氧雜環丁基的化合物、含烷氧基甲基的雜環狀化合物,除此以外還可添加:各種環狀醚、環狀酯(內酯)等含氧化合物,環狀胺、噁唑啉等含氮化合物,進而可添加具有d電子的矽、硫、磷等的雜環化合物等。<Heterocyclic Compound> The positive photosensitive resin layer in the present invention preferably contains a compound containing a heterocyclic compound. By adding a heterocyclic compound, the cured film obtained from the positive photosensitive resin layer can be made into a stronger film. The heterocyclic compound is not particularly limited as long as the polymer component is removed. For example, a compound having an epoxy group or an oxetanyl group or a heterocyclic compound containing an alkoxymethyl group in the molecule described below may be added, and other cyclic ethers and cyclic esters may be added. An oxygen-containing compound such as a (lactone), a nitrogen-containing compound such as a cyclic amine or an oxazoline, or a heterocyclic compound such as ruthenium, sulfur or phosphorus having d electrons may be added.

相對於正型感光性樹脂層的總固體成分100質量份,正型感光性樹脂層中的雜環狀化合物的添加量較佳為0.01質量份~50質量份,更佳為0.1質量份~10質量份,尤佳為1質量份~5質量份。藉由在該範圍內添加,則獲得機械強度優異的硬化膜,且獲得耐化學品性優異的硬化膜。雜環狀化合物亦可併用多種,該情況下,將雜環狀化合物全部合計來計算含量。The amount of the heterocyclic compound added to the positive photosensitive resin layer is preferably from 0.01 part by mass to 50 parts by mass, more preferably from 0.1 part by mass to 10 parts by mass per 100 parts by mass of the total solid content of the positive photosensitive resin layer. The mass part is particularly preferably from 1 part by mass to 5 parts by mass. When it is added in this range, a cured film excellent in mechanical strength is obtained, and a cured film excellent in chemical resistance is obtained. A plurality of heterocyclic compounds may be used in combination. In this case, the total content of the heterocyclic compounds is calculated in total.

分子內具有環氧基的化合物的具體例可列舉:雙酚A型環氧樹脂、雙酚F型環氧樹脂、苯酚酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂、脂肪族環氧樹脂等。Specific examples of the compound having an epoxy group in the molecule include a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, a phenol novolak type epoxy resin, a cresol novolak type epoxy resin, and an aliphatic ring. Oxygen resin, etc.

該些化合物可作為市售品而獲取。例如可列舉:JER828、JER1007、JER157S70(三菱化學公司製造),JER157S65(三菱化學控股(Mitsubishi Chemical Holdings)(股)製造)等,日本專利特開2011-221494號公報的段落編號0189中記載的市售品等。 除此以外,亦可列舉:艾迪科樹脂(ADEKA RESIN)EP-4000S、艾迪科樹脂(ADEKA RESIN)EP-4003S、艾迪科樹脂(ADEKA RESIN)EP-4010S、艾迪科樹脂(ADEKA RESIN)EP-4011S(以上,艾迪科(ADEKA)(股)製造);NC-2000、NC-3000、NC-7300、XD-1000、EPPN-501、EPPN-502(以上,艾迪科(ADEKA)(股)製造);丹納考爾(Denacol)EX-611、EX-612、EX-614、EX-614B、EX-622、EX-512、EX-521、EX-411、EX-421、EX-313、EX-314、EX-321、EX-211、EX-212、EX-810、EX-811、EX-850、EX-851、EX-821、EX-830、EX-832、EX-841、EX-911、EX-941、EX-920、EX-931、EX-212L、EX-214L、EX-216L、EX-321L、EX-850L、DLC-201、DLC-203、DLC-204、DLC-205、DLC-206、DLC-301、DLC-402、EX-111,EX-121、EX-141、EX-145、EX-146、EX-147、EX-171、EX-192(以上,長瀨化成(Nagase ChemteX)製造);YH-300、YH-301、YH-302、YH-315、YH-324、YH-325(以上,新日鐵住金化學製造);賽羅西德(Celloxide)2021P、2081、2000、3000、EHPE3150,艾波利得(Epolead)GT400,賽維納斯(Celvenus)B0134、B0177(大賽璐(Daicel)(股))等。 該些可單獨使用一種或者將兩種以上組合使用。These compounds are available as commercial products. For example, JER828, JER1007, JER157S70 (manufactured by Mitsubishi Chemical Corporation), JER157S65 (manufactured by Mitsubishi Chemical Holdings Co., Ltd.), and the market described in paragraph No. 0189 of JP-A-2011-221494 Sales, etc. In addition, ADEKA RESIN EP-4000S, ADEKA RESIN EP-4003S, ADEKA RESIN EP-4010S, Adeco resin (ADEKA) RESIN)EP-4011S (above, manufactured by ADEKA); NC-2000, NC-3000, NC-7300, XD-1000, EPPN-501, EPPN-502 (above, Addico ( ADEKA) (manufacturer); Denacol EX-611, EX-612, EX-614, EX-614B, EX-622, EX-512, EX-521, EX-411, EX-421 , EX-313, EX-314, EX-321, EX-211, EX-212, EX-810, EX-811, EX-850, EX-851, EX-821, EX-830, EX-832, EX -841, EX-911, EX-941, EX-920, EX-931, EX-212L, EX-214L, EX-216L, EX-321L, EX-850L, DLC-201, DLC-203, DLC-204 , DLC-205, DLC-206, DLC-301, DLC-402, EX-111, EX-121, EX-141, EX-145, EX-146, EX-147, EX-171, EX-192 (above) , manufactured by Nagase ChemteX); YH-300, YH-301, YH-302, YH-315, YH-324, YH-325 (above, Nippon Steel & Sumitomo Chemical Manufacturing); Cyrusde ( Celloxide) 2021P, 2081, 2000, 3000, EHPE3150, Epolead GT400, Celvenus B0134, B0177 (Daicel). These may be used alone or in combination of two or more.

該些化合物中,更佳為列舉雙酚A型環氧樹脂、雙酚F型環氧樹脂、苯酚酚醛清漆型環氧樹脂以及脂肪族環氧樹脂,特佳為列舉脂肪族環氧樹脂。Among these compounds, a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, a phenol novolac type epoxy resin, and an aliphatic epoxy resin are more preferable, and an aliphatic epoxy resin is especially preferable.

分子內具有氧雜環丁基的化合物的具體例可使用:阿隆氧雜環丁烷(Aron Oxetane)OXT-201、OXT-211、OXT-212、OXT-213、OXT-121、OXT-221、OX-SQ、PNOX(以上,東亞合成(股)製造)。Specific examples of the compound having an oxetanyl group in the molecule can be used: Aron Oxetane OXT-201, OXT-211, OXT-212, OXT-213, OXT-121, OXT-221 , OX-SQ, PNOX (above, East Asia Synthetic (Stock) manufacturing).

另外,包含氧雜環丁基的化合物較佳為單獨使用或者與包含環氧基的化合物混合使用。Further, the compound containing an oxetanyl group is preferably used singly or in combination with a compound containing an epoxy group.

該些化合物中,就耐蝕刻性及線寬穩定性的觀點而言,本發明中的正型感光性樹脂層較佳為雜環狀化合物為具有環氧基的化合物。Among these compounds, the positive photosensitive resin layer in the present invention preferably has a heterocyclic compound as a compound having an epoxy group from the viewpoint of etching resistance and line width stability.

另外,分子內具有烷氧基矽烷結構及雜環狀結構的兩者的化合物亦可適合地使用。例如可列舉:γ-縮水甘油氧基丙基三烷氧基矽烷、γ-縮水甘油氧基丙基烷基二烷氧基矽烷、β-(3,4-環氧基環己基)乙基三烷氧基矽烷。該些化合物中,更佳為γ-縮水甘油氧基丙基三烷氧基矽烷。該些化合物可單獨使用一種或者將兩種以上組合使用。Further, a compound having both an alkoxydecane structure and a heterocyclic structure in the molecule can also be suitably used. For example, γ-glycidoxypropyl trialkoxy decane, γ-glycidoxypropyl alkyl dialkoxy decane, β-(3,4-epoxycyclohexyl)ethyl three Alkoxydecane. Among these compounds, more preferred is γ-glycidoxypropyl trialkoxydecane. These compounds may be used alone or in combination of two or more.

<界面活性劑> 本發明中的正型感光性樹脂層亦可含有界面活性劑。界面活性劑可使用陰離子系、陽離子系、非離子系、或者兩性的任一種,但較佳的界面活性劑為非離子界面活性劑。 非離子系界面活性劑的例子可列舉:聚氧乙烯高級烷基醚類、聚氧乙烯高級烷基苯基醚類、聚氧乙二醇的高級脂肪酸二酯類、矽酮系、氟系界面活性劑。另外,可列舉下述商品名:KP(信越化學工業(股)製造),珀利弗洛(Polyflow)(共榮社化學(股)製造),艾福拓(Eftop)(三菱材料電子化成(JEMCO)公司製造),美佳法(Megafac)(迪愛生(DIC)(股)製造),弗拉德(Fluorad)(住友3M(股)製造),阿薩佳(Asahi Guard)、沙福隆(Surflon)(旭硝子(股)製造),坡利福克斯(PolyFox)(歐諾法(OMNOVA)公司製造),SH-8400(東麗道康寧矽酮(Toray Dow Corning Silicone))等各系列。 另外,作為界面活性劑,可列舉如下共聚物作為較佳例,所述共聚物包含下述式(I-1)所表示的構成單元A以及構成單元B,且於將四氫呋喃(tetrahydrofuran,THF)作為溶劑的情況下的利用凝膠滲透層析法來測定的聚苯乙烯換算的重量平均分子量(Mw)為1.0×103 以上、1.0×104 以下。<Interacting Agent> The positive photosensitive resin layer in the present invention may further contain a surfactant. The surfactant may be any of an anionic, cationic, nonionic or amphoteric, but a preferred surfactant is a nonionic surfactant. Examples of the nonionic surfactant include polyoxyethylene higher alkyl ethers, polyoxyethylene higher alkylphenyl ethers, higher fatty acid diesters of polyoxyethylene glycol, anthrone series, and fluorine interface. Active agent. In addition, the following trade names are listed: KP (manufactured by Shin-Etsu Chemical Co., Ltd.), Polyflow (manufactured by Kyoeisha Chemical Co., Ltd.), and Eftop (electronic development of Mitsubishi Materials ( JEMCO)), Megafac (made by DiCai (DIC)), Fluorad (made by Sumitomo 3M), Asahi Guard, Shafulong ( Surflon) (made by Asahi Glass Co., Ltd.), PolyFox (made by OMNOVA), and SH-8400 (Toray Dow Corning Silicone). Further, as the surfactant, a copolymer comprising a constituent unit A represented by the following formula (I-1) and a constituent unit B, and tetrahydrofuran (THF) is exemplified. The weight average molecular weight (Mw) in terms of polystyrene measured by gel permeation chromatography in the case of a solvent is 1.0 × 10 3 or more and 1.0 × 10 4 or less.

式(I-1) [化23] Formula (I-1) [Chem. 23]

式(I-1)中,R401 及R403 分別獨立地表示氫原子或甲基,R402 表示碳數1以上、4以下的直鏈伸烷基,R404 表示氫原子或碳數1以上、4以下的烷基,L表示碳數3以上、6以下的伸烷基,p及q為表示聚合比的質量百分率,p表示10質量%以上、80質量%以下的數值,q表示20質量%以上、90質量%以下的數值,r表示1以上、18以下的整數,s表示1以上、10以下的整數。In the formula (I-1), R 401 and R 403 each independently represent a hydrogen atom or a methyl group, R 402 represents a linear alkylene group having 1 or more and 4 or less carbon atoms, and R 404 represents a hydrogen atom or a carbon number of 1 or more. And an alkyl group of 4 or less, L represents an alkylene group having 3 or more carbon atoms and 6 or less, p and q are mass percentages indicating a polymerization ratio, p is a numerical value of 10% by mass or more and 80% by mass or less, and q is 20 mass%. A numerical value of % or more and 90% by mass or less, r represents an integer of 1 or more and 18 or less, and s represents an integer of 1 or more and 10 or less.

L較佳為下述式(I-2)所表示的分支伸烷基。式(I-2)中的R405 表示碳數1以上、4以下的烷基,就相容性與對被塗佈面的潤濕性的方面而言,較佳為碳數1以上、3以下的烷基,更佳為碳數2或3的烷基。p與q的和(p+q)較佳為p+q=100、即100質量%。L is preferably a branched alkyl group represented by the following formula (I-2). R 405 in the formula (I-2) represents an alkyl group having 1 or more carbon atoms and 4 or less carbon atoms, and preferably has a carbon number of 1 or more and 3 in terms of compatibility and wettability to a surface to be coated. The alkyl group below is more preferably an alkyl group having 2 or 3 carbon atoms. The sum (p + q) of p and q is preferably p + q = 100, that is, 100% by mass.

式(I-2) [化24] Formula (I-2) [Chem. 24]

共聚物的重量平均分子量(Mw)更佳為1.5×103 以上、5.0×103 以下。The weight average molecular weight (Mw) of the copolymer is more preferably 1.5 × 10 3 or more and 5.0 × 10 3 or less.

除此以外,亦可使用日本專利第4502784號公報的段落[0017]、日本專利特開2009-237362號公報的段落[0060]~[0071]中記載的界面活性劑。In addition, the surfactants described in paragraphs [0017] of JP-A-4502784, and paragraphs [0060] to [0071] of JP-A-2009-237362 may be used.

該些界面活性劑可單獨使用一種或者將兩種以上混合使用。 相對於正型感光性樹脂層中的總固體成分100質量份,正型感光性樹脂層中的界面活性劑的添加量較佳為10質量份以下,更佳為0.001質量份~10質量份,尤佳為0.01質量份~3質量份。These surfactants may be used alone or in combination of two or more. The amount of the surfactant added to the positive photosensitive resin layer is preferably 10 parts by mass or less, more preferably 0.001 parts by mass to 10 parts by mass, per 100 parts by mass of the total solid content in the positive photosensitive resin layer. It is particularly preferably from 0.01 part by mass to 3 parts by mass.

<放射線吸收劑> 本發明中的正型感光性樹脂層亦較佳為包含放射線吸收劑。放射線吸收劑較佳為紫外線吸收劑,特佳為使用藉由紫外線吸收而吸光度減少的顯示出所謂光褪色性的放射線吸收劑。具體而言可列舉:萘醌二疊氮衍生物、硝酸靈(nitron)或者重氮鎓鹽等光消色性材料(例如日本專利特公昭62-40697號公報、M.笹野(M. Sasano)等人的「國際光學工程學會會議錄(Society of Photo-Optical Instrumentation Engineers,SPIE Symp. Proc.)」631、321(1986)中記載的化合物)。 該些材料是出於利用放射線吸收劑使感光性樹脂層內的光強度分佈平均化的目的而使用,藉由帶來所謂的內添型對比度增強光刻(Contrast Enhancement Lithography,CEL)效果而獲得圖案的矩形化、邊緣粗糙度的改善效果(參照「半導體製程材料與化學品」,阪本正典主編,CMC出版(2006))。<Radiation Absorber> The positive photosensitive resin layer in the present invention preferably further contains a radiation absorber. The radiation absorbing agent is preferably an ultraviolet absorber, and particularly preferably a radiation absorber which exhibits so-called photofading property by reducing absorbance by ultraviolet light absorption. Specific examples thereof include a photodecolorizable material such as a naphthoquinone diazide derivative, a nitroxide or a diazonium salt (for example, Japanese Patent Publication No. Sho 62-40697, M. Sasano). The compound described in "Society of Photo-Optical Instrumentation Engineers (SPIE Symp. Proc.)", 631, 321 (1986). These materials are used for the purpose of averaging the light intensity distribution in the photosensitive resin layer by the radiation absorbing agent, and are obtained by a so-called Contrast Enhancement Lithography (CEL) effect. The effect of rectangular patterning and edge roughness improvement (see "Semiconductor Process Materials and Chemicals", edited by Sakamoto Masahiro, CMC Publishing (2006)).

<其他成分> 本發明中的正型感光性樹脂層中,可進而添加:金屬氧化物粒子、雜環狀化合物以外的交聯劑、烷氧基矽烷化合物、抗氧化劑、分散劑、酸增殖劑、顯影促進劑、導電性纖維、著色劑、熱自由基產生劑、熱酸產生劑、紫外線吸收劑、增黏劑、以及有機或無機的沈澱防止劑等公知的添加劑。 關於其他成分的較佳形態,於日本專利特開2014-85643號公報的[0165]~[0184]中分別有記載,該公報的內容併入本說明書中。<Other components> In the positive photosensitive resin layer of the present invention, metal oxide particles, a crosslinking agent other than the heterocyclic compound, an alkoxydecane compound, an antioxidant, a dispersing agent, and an acid proliferating agent may be further added. A known additive such as a development accelerator, a conductive fiber, a colorant, a thermal radical generator, a thermal acid generator, an ultraviolet absorber, a tackifier, and an organic or inorganic precipitation preventive agent. A preferred embodiment of the other components is described in each of [0165] to [0184] of JP-A-2014-85643, the contents of which are hereby incorporated by reference.

<正型感光性樹脂層的厚度> 正型感光性樹脂層的厚度較佳為0.5 μm~10 μm。若正型感光性樹脂層的厚度為10 μm以下,則圖案的解析度良好,若為0.5 μm以上,則就圖案直線性的觀點而言較佳。 正型感光性樹脂層的厚度尤佳為0.8 μm~5 μm,特佳為1.0 μm~3.0 μm。<Thickness of Positive Photosensitive Resin Layer> The thickness of the positive photosensitive resin layer is preferably 0.5 μm to 10 μm. When the thickness of the positive photosensitive resin layer is 10 μm or less, the resolution of the pattern is good, and when it is 0.5 μm or more, it is preferable from the viewpoint of pattern linearity. The thickness of the positive photosensitive resin layer is particularly preferably from 0.8 μm to 5 μm, particularly preferably from 1.0 μm to 3.0 μm.

<正型感光性樹脂層的形成方法> 可以既定的比例且利用任意的方法將各成分混合,攪拌溶解而製備用以形成正型感光性樹脂層的正型感光性樹脂組成物。例如,亦可將各成分分別預先形成溶解於溶劑中的溶液後,將該些溶液以既定的比例進行混合來製備組成物溶液。以如上方式製備的組成物溶液亦可使用孔徑為0.2 μm的過濾器等進行過濾後,供於使用。<Method of Forming Positive Photosensitive Resin Layer> The positive photosensitive resin composition for forming a positive photosensitive resin layer can be prepared by mixing and mixing the components in a predetermined ratio by any method. For example, each component may be previously formed into a solution dissolved in a solvent, and then the solutions may be mixed at a predetermined ratio to prepare a composition solution. The composition solution prepared as described above can also be used after being filtered using a filter having a pore size of 0.2 μm or the like.

藉由將組成物溶液塗佈於暫時支持體的表面,使其乾燥,可獲得於暫時支持體上形成有正型感光性樹脂層的本發明的正型感光性樹脂材料(正型感光性轉印材料)。By applying the composition solution to the surface of the temporary support and drying it, the positive photosensitive resin material of the present invention in which the positive photosensitive resin layer is formed on the temporary support can be obtained (positive photosensitive transfer) Printed material).

<對比度增強層> 本發明的正型感光性轉印材料亦較佳為包括正型感光性樹脂層及對比度增強層。 對使用對比度增強層(Contrast Enhancement Layer;CEL)的對比度增強層法(Contrast Enhancement Layer Method,CEL法)進行說明。該方法是由通用電氣公司(General Electric Company,G.E.)的格里芬(Griffing)等在1983年發表(B.F.格里芬(B.F.Griffing)、P.R.韋斯特(P.R.West),「電器與電子工程師學會電子器件快報(IEEE(Institute of Electrical and Electronic Engineers)Electron Device Letters)」,Vol ED1-4,14,1983),如美國專利第4,702,996號、日本專利特公昭62-40697號公報中所揭示,主要包含藉由光而退色的物質即芳基硝酮(aryl nitrone)化合物與聚合體鍵結劑,於正型感光性樹脂層膜上進而形成該光退色性化合物膜,依據常法的步驟來形成圖案。通常,曝光時應利用光罩來遮蔽光的部分亦由於干擾效果而發現若干的弱光的照射,該部分利用光褪色性膜(CEL)來遮斷光,實現曝光部與未曝光部的對比度的增強,有助於解析度、焦點深度的提高。 亦較佳為於正型感光性樹脂層上形成中間層,且於中間層上形成對比度增強層(以下有稱為「CEL」或者「CE層」的情況)。中間層是為了防止CEL與正型感光性樹脂層的混合而設置。如日本專利特開平2-212851號公報中亦揭示的,CEL為含有如下材料(稱為光消色性色素成分)的層,所述材料於曝光前對曝光波長的吸收大,但隨著曝光而吸收逐漸減小,即光的透過率提高。光消色性色素成分已知重氮鎓鹽、苯乙烯基吡啶鎓(stilbazolium)鹽、芳基亞硝基鹽類。被膜形成成分使用酚系樹脂等。 除此以外,對比度增強層可使用:日本專利特開平6-97065號公報的[0004]~[0051];日本專利特開平6-332167號公報的[0012]~[0055];光聚合物手冊(photopolymer handbook),光聚合物座談會編,工業調査會(1989);光聚合物技術(Photopolymer Technology),山岡、永松編,日刊工業新聞社(1988)中記載的材料。<Contrast Enhancement Layer> The positive photosensitive transfer material of the present invention preferably further includes a positive photosensitive resin layer and a contrast enhancement layer. A Contrast Enhancement Layer Method (CEL method) using a Contrast Enhancement Layer (CEL) will be described. The method was published in 1983 by Griffing of General Electric Company (GE) (BF Griffing, PR West, "Electrical and Electronic Engineers" "Instrument of Electrical and Electronic Engineers (Electron Device Letters)", Vol ED 1-4, 14, 1983), as disclosed in U.S. Patent No. 4,702,996, Japanese Patent Publication No. Sho 62-40697, The aryl nitrone compound and the polymer bonding agent, which are substances which are discolored by light, are mainly formed on the positive photosensitive resin layer film to form the photochromic compound film, according to the procedure of the conventional method. Form a pattern. Generally, the portion of the light that is shielded by the reticle during exposure is also exposed to a plurality of weak light due to the interference effect, and the portion is blocked by the photo fading film (CEL) to achieve contrast between the exposed portion and the unexposed portion. The enhancement helps the resolution and depth of focus increase. It is also preferable to form an intermediate layer on the positive photosensitive resin layer and form a contrast enhancement layer (hereinafter referred to as "CEL" or "CE layer") on the intermediate layer. The intermediate layer is provided to prevent mixing of the CEL and the positive photosensitive resin layer. As disclosed in Japanese Laid-Open Patent Publication No. Hei 2-212851, CEL is a layer containing a material (referred to as a photochromic dye component) which absorbs the exposure wavelength before exposure, but with exposure The absorption is gradually reduced, that is, the transmittance of light is increased. As the photochromic dye component, a diazonium salt, a styrlbazolium salt, or an aryl nitroso salt is known. A phenol resin or the like is used as the film forming component. In addition, the contrast enhancement layer can be used as follows: [0004] to [0051] of JP-A-6-97065, and [0012] to [0055] of Japanese Patent Laid-Open No. Hei 6-332167; (photopolymer handbook), photopolymer symposium, industrial survey (1989); photopolymer technology (Photopolymer Technology), Yamaoka, Yongsong, and Nikkan Kogyo Shimbun (1988).

<其他的層> 本發明的正型感光性轉印材料例如亦較佳為依次包括暫時支持體、熱塑性樹脂層、及正型感光性樹脂層,亦可更包括覆蓋膜等其他的層。 熱塑性樹脂層的較佳形態於日本專利特開2014-85643號公報的[0189]~[0193]中有記載,其他層的較佳形態於日本專利特開2014-85643號公報的[0194]~[0196]中有記載,該公報的內容併入本說明書中。<Other Layers> The positive photosensitive transfer material of the present invention preferably further includes, for example, a temporary support, a thermoplastic resin layer, and a positive photosensitive resin layer, and may further include another layer such as a cover film. The preferred embodiment of the thermoplastic resin layer is described in [0189] to [0193] of JP-A-2014-85643, and the preferred embodiment of the other layer is [0194] of JP-A-2014-85643. [0196] The contents of this publication are incorporated in the present specification.

於本發明的正型感光性轉印材料包括熱塑性樹脂層等其他層的情況下,可依據日本專利特開2006-259138號公報的段落[0094]~[0098]中記載的感光性轉印材料的製作方法來製作。 例如,於製作包括熱塑性樹脂層及中間層的本發明的正型感光性轉印材料的情況下,於暫時支持體上,塗佈將添加劑與熱塑性的有機高分子一併溶解的溶解液(熱塑性樹脂層用塗佈液),使其乾燥而設置熱塑性樹脂層後,於該熱塑性樹脂層上塗佈於不溶解熱塑性樹脂層的溶劑中添加樹脂及添加劑而製備的製備液(中間層用塗佈液),使其乾燥而積層中間層。於該中間層上進而塗佈使用不溶解中間層的溶劑來製備的正型感光性樹脂層用塗佈液,使其乾燥而積層正型感光性樹脂層,藉此可適當地製作本發明的正型感光性轉印材料。In the case where the positive photosensitive transfer material of the present invention includes another layer such as a thermoplastic resin layer, the photosensitive transfer material described in paragraphs [0094] to [0098] of JP-A-2006-259138 can be used. The production method is to make. For example, in the case of producing a positive photosensitive transfer material of the present invention comprising a thermoplastic resin layer and an intermediate layer, a solution (thermoplastic) in which an additive is dissolved together with a thermoplastic organic polymer is applied to a temporary support. After the thermoplastic resin layer is provided by drying the coating liquid for a resin layer, a preparation liquid prepared by adding a resin and an additive to a solvent in which the thermoplastic resin layer is not dissolved is applied to the thermoplastic resin layer (application for intermediate layer) Liquid), dry it to build an intermediate layer. Further, the coating liquid for a positive photosensitive resin layer prepared by dissolving a solvent which does not dissolve the intermediate layer is applied to the intermediate layer, and dried to laminate a positive photosensitive resin layer, whereby the present invention can be suitably produced. Positive photosensitive transfer material.

[電路配線的製造方法] 本發明的電路配線的製造方法為電路配線的製造方法,其依次包括: (a)貼合步驟,對於基板,即,包括基材、以及包含構成材料相互不同的第一導電層及第二導電層的多個導電層,且於基材的表面上,以自遠離基材的表面起依次積層有作為最表面層的第一導電層及第二導電層的基板,使所述的本發明的正型感光性轉印材料的正型感光性樹脂層與第一導電層接觸而貼合; (b)第一曝光步驟,經由貼合步驟後的正型感光性轉印材料的暫時支持體,對正型感光性樹脂層進行圖案曝光; (c)第一顯影步驟,自第一曝光步驟後的正型感光性樹脂層上剝離暫時支持體後,對第一曝光步驟後的正型感光性樹脂層進行顯影而形成第一圖案; (d)第一蝕刻步驟,對未配置第一圖案的區域中的多個導電層中的至少第一導電層及第二導電層進行蝕刻處理; (e)第二曝光步驟,以與第一圖案不同的圖案,對第一蝕刻步驟後的第一圖案進行圖案曝光; (f)第二顯影步驟,對第二曝光步驟後的第一圖案進行顯影而形成第二圖案;以及 (g)第二蝕刻步驟,對未配置第二圖案的區域中的多個導電層中的至少第一導電層進行蝕刻處理。[Manufacturing Method of Circuit Wiring] The method of manufacturing the circuit wiring of the present invention is a method of manufacturing a circuit wiring, which includes, in order: (a) a bonding step, in which a substrate, that is, a substrate, and a constituent material are different from each other a conductive layer and a plurality of conductive layers of the second conductive layer, and a substrate on which the first conductive layer and the second conductive layer are the outermost layer are laminated on the surface of the substrate from the surface away from the substrate. The positive photosensitive resin layer of the positive photosensitive transfer material of the present invention is brought into contact with the first conductive layer and bonded; (b) the first exposure step, the positive photosensitive conversion after the bonding step a temporary support of the printing material, patterning the positive photosensitive resin layer; (c) a first developing step, after peeling off the temporary support from the positive photosensitive resin layer after the first exposure step, the first exposure The positive photosensitive resin layer after the step is developed to form a first pattern; (d) a first etching step of at least the first conductive layer and the second conductive of the plurality of conductive layers in the region where the first pattern is not disposed Floor a row etching process; (e) a second exposing step of patternwise exposing the first pattern after the first etching step in a pattern different from the first pattern; (f) a second developing step, after the second exposing step The first pattern is developed to form a second pattern; and (g) a second etching step of etching at least the first conductive layer of the plurality of conductive layers in the region where the second pattern is not disposed.

先前,感光性樹脂組成物根據感光系統的差異而分為:照射到光化射線的部分作為圖像而殘留的負型、與將未照射到光化射線的部分作為圖像而殘留的正型。正型中藉由照射光化射線,例如使用經光化射線照射而產生酸的感光劑等來提高曝光部的溶解性,因此於圖案曝光時曝光部及未曝光部均未硬化,所獲得的圖案形狀不良的情況下,可藉由全面曝光等而將基板再利用(二次加工(rework))。因此,就所謂的二次加工性優異的觀點而言,較佳為正型。另外,只有正型感光性樹脂層才能實現殘存的感光性樹脂層再次曝光而製作不同圖案的技術。Conventionally, the photosensitive resin composition is classified into a negative type that remains as an image when irradiated to the actinic ray, and a positive type that remains as an image of a portion that is not irradiated with the actinic ray. . In the positive type, by irradiating an actinic ray, for example, a sensitizer which generates an acid by irradiation with an actinic ray, or the like, the solubility of the exposed portion is improved. Therefore, the exposed portion and the unexposed portion are not hardened during pattern exposure. When the pattern shape is defective, the substrate can be reused (rework) by full exposure or the like. Therefore, from the viewpoint of excellent secondary workability, it is preferably positive. Further, only the positive photosensitive resin layer can realize the technique of re-exposing the remaining photosensitive resin layer to produce different patterns.

依據本發明的電路配線的製造方法,即便以低溫且高速,於電路配線形成用基板上貼合正型感光性轉印材料,亦可確保高密合性。另外,本發明的電路配線的製造方法可藉由1次的本發明的電路配線的製造方法的貼合(層壓)來形成包含多種圖案的導電層的電路配線,因此製造效率優異,另外,不需要多種圖案的導電層的對準,因此適合作為輸入裝置用途、特別是觸控面板用途。According to the method of manufacturing a circuit wiring of the present invention, even when a positive photosensitive transfer material is bonded to a circuit wiring forming substrate at a low temperature and a high speed, high adhesion can be ensured. In the method of manufacturing the circuit wiring of the present invention, the circuit wiring including the conductive layers of the plurality of patterns can be formed by lamination (lamination) of the method for manufacturing the circuit wiring of the present invention, and therefore, the manufacturing efficiency is excellent, and The alignment of the conductive layers of multiple patterns is not required and is therefore suitable for use as an input device, particularly for touch panels.

以下,對本發明的電路配線的製造方法的較佳形態進行說明。圖2中概略性地示出作為本發明的實施方式之一的觸控面板用電路配線的製造方法的一例。此處,對使用電路形成用基板20來製造包括兩種圖案的導電層的電路配線基板的情況進行說明,所述電路形成用基板20包括基材22、以及自遠離基材22的其中一個表面起依次第一導電層24及第二導電層26。Hereinafter, preferred embodiments of the method of manufacturing the circuit wiring of the present invention will be described. FIG. 2 schematically shows an example of a method of manufacturing a circuit wiring for a touch panel which is one embodiment of the present invention. Here, a case will be described in which a circuit wiring substrate including a conductive layer of two patterns including a substrate 22 and one surface away from the substrate 22 is manufactured using the circuit-forming substrate 20 The first conductive layer 24 and the second conductive layer 26 are sequentially arranged.

對將本發明的正型感光性轉印材料中的正型感光性樹脂層用作抗蝕刻劑(蝕刻圖案)而獲得靜電電容型輸入裝置的導電層圖案的情況進行說明。 此外,靜電電容型輸入裝置包括基材(前面板或膜基板)以及於基材的非接觸側至少包括下述(2)~(5)的要素,較佳為利用本發明的電路配線的製造方法來形成(2)、(3)及(5)中的至少1個。 (2)多個墊部分經由連接部分而在第一方向上延伸形成的多個第一電極圖案 (3)與第一電極圖案電性絕緣且包含在與第一方向交叉的方向上延伸形成的多個墊部分的多個第二電極圖案 (4)使第一電極圖案與第二電極圖案電性絕緣的絕緣層 (5)與第一電極圖案及第二電極圖案的至少一者電性連接且與第一電極圖案及第二電極圖案不同的其他導電性要素 以下,對各步驟的詳情進行說明。A case where the positive-type photosensitive resin layer in the positive photosensitive transfer material of the present invention is used as an etch resist (etching pattern) to obtain a conductive layer pattern of the capacitance type input device will be described. Further, the capacitance type input device includes a substrate (front plate or film substrate) and elements including at least the following (2) to (5) on the non-contact side of the substrate, and is preferably manufactured using the circuit wiring of the present invention. The method forms at least one of (2), (3), and (5). (2) the plurality of first electrode patterns (3) formed by the plurality of pad portions extending in the first direction via the connection portion are electrically insulated from the first electrode patterns and include the extension formed in a direction crossing the first direction The plurality of second electrode patterns (4) of the plurality of pad portions electrically connect the insulating layer (5) electrically insulated from the first electrode pattern and the second electrode pattern to at least one of the first electrode pattern and the second electrode pattern The details of the respective steps will be described below with respect to other conductive elements different from the first electrode pattern and the second electrode pattern.

(a)貼合步驟 首先,於貼合步驟中,對於基板20,即,包括基材22、以及包含構成材料相互不同的第一導電層24及第二導電層26的多個導電層,且於基材22的表面上,以自遠離基材22的表面起依次積層有作為最表面層的第一導電層24及第二導電層26的基板(電路配線形成用基板)20,使所述的本發明的正型感光性轉印材料100的正型感光性樹脂層14與第一導電層24接觸而貼合。此外,存在將如上所述的電路配線形成用基板與正型感光性轉印材料的貼合稱為「轉印」或「層壓」的情況。(a) bonding step first, in the bonding step, for the substrate 20, that is, including the substrate 22, and a plurality of conductive layers including the first conductive layer 24 and the second conductive layer 26 having different constituent materials, and On the surface of the substrate 22, a substrate (circuit wiring forming substrate) 20 in which the first conductive layer 24 and the second conductive layer 26 as the outermost layer are laminated in this order from the surface away from the substrate 22 is provided. The positive photosensitive resin layer 14 of the positive photosensitive transfer material 100 of the present invention is in contact with the first conductive layer 24 and bonded thereto. In addition, the bonding of the circuit wiring forming substrate and the positive photosensitive transfer material as described above is referred to as "transfer" or "lamination".

於如圖1所示,在正型感光性轉印材料100的正型感光性樹脂層14上包括覆蓋膜16的情況下,自正型感光性轉印材料100(正型感光性樹脂層14)上去除覆蓋膜16後,使正型感光性轉印材料100的正型感光性樹脂層14與第一導電層24接觸而貼合。 正型感光性轉印材料於第一導電層上的貼合(轉印)較佳為將正型感光性轉印材料的正型感光性樹脂層側重疊於第一導電層上,利用輥等進行加壓及加熱。貼合中可使用:層壓機、真空層壓機、以及可進一步提高生產性的自動切割層壓機(auto-cut laminator)等公知的層壓機。 於電路配線形成用基板的基材為樹脂膜的情況下,亦可進行輥對輥的貼合。As shown in FIG. 1, in the case where the cover film 16 is included on the positive photosensitive resin layer 14 of the positive photosensitive transfer material 100, the positive photosensitive photosensitive material 100 (positive photosensitive resin layer 14) After the cover film 16 is removed, the positive photosensitive resin layer 14 of the positive photosensitive transfer material 100 is brought into contact with the first conductive layer 24 to be bonded. The bonding (transfer) of the positive photosensitive material on the first conductive layer is preferably such that the positive photosensitive resin layer side of the positive photosensitive transfer material is superposed on the first conductive layer, and a roller or the like is used. Pressurize and heat. A laminating machine, a vacuum laminator, and a known laminator such as an auto-cut laminator which can further improve productivity can be used for the lamination. When the base material of the circuit wiring forming substrate is a resin film, the roll-to-roll bonding may be performed.

(基材) 於基材上積層有多個導電層的基板較佳為基材為玻璃基材或者膜基材,更佳為膜基材。於觸控面板用的電路配線的情況下,本發明的電路配線的製造方法特佳為基材為片材狀樹脂組成物。 另外,基材較佳為透明。 基材的折射率特佳為1.5~1.52。 基材亦可包括玻璃基材等透光性基材,可使用康寧公司的大猩猩玻璃(Gorilla Glass)所代表的強化玻璃等。另外,所述透明基材可較佳地使用日本專利特開2010-86684號公報、日本專利特開2010-152809號公報以及日本專利特開2010-257492號公報中使用的材料。 於使用膜基材來作為基材的情況下,更佳為使用無光學應變的基材、以及透明度高的基材,就具體的原材料而言可列舉:聚對苯二甲酸乙二酯(polyethylene terephthalate,PET)、聚萘二甲酸乙二酯、聚碳酸酯、三乙醯基纖維素、環烯烴聚合物。(Substrate) The substrate on which a plurality of conductive layers are laminated on the substrate is preferably a glass substrate or a film substrate, more preferably a film substrate. In the case of the circuit wiring for a touch panel, the method of manufacturing the circuit wiring of the present invention is particularly preferably a substrate-like resin composition. In addition, the substrate is preferably transparent. The refractive index of the substrate is particularly preferably from 1.5 to 1.52. The substrate may also include a light-transmitting substrate such as a glass substrate, and tempered glass represented by Corning's Gorilla Glass may be used. Further, as the transparent substrate, a material used in Japanese Patent Laid-Open Publication No. 2010-86684, Japanese Patent Laid-Open No. 2010-152809, and Japanese Patent Laid-Open No. 2010-257492 can be preferably used. When a film substrate is used as the substrate, it is more preferable to use a substrate having no optical strain and a substrate having high transparency, and specific examples of the raw material include polyethylene terephthalate (polyethylene terephthalate). Terephthalate, PET), polyethylene naphthalate, polycarbonate, triethyl fluorenyl cellulose, cyclic olefin polymer.

(導電層) 形成於基材上的多個導電層可列舉一般的電路配線或者觸控面板配線中使用的任意導電層。 導電層的材料可列舉金屬以及金屬氧化物等。(Conductive Layer) The plurality of conductive layers formed on the substrate may be any of the common circuit layers or any of the conductive layers used in the touch panel wiring. The material of the conductive layer may, for example, be a metal or a metal oxide.

本發明的電路配線的製造方法較佳為多個導電層中至少一個導電層包含金屬氧化物。導電層中使用的金屬氧化物可列舉:氧化銦錫(Indium Tin Oxide,ITO)、氧化銦鋅(Indium Zinc Oxide,IZO)、SiO2 等的金屬氧化膜等。 導電層較佳為後述靜電電容型輸入裝置中使用的第一電極圖案、第二電極圖案、其他的導電性要素。 關於其他導電層的較佳形態,後文於靜電電容型輸入裝置的說明中進行說明。In the method of manufacturing a circuit wiring of the present invention, it is preferable that at least one of the plurality of conductive layers contains a metal oxide. Examples of the metal oxide used in the conductive layer include a metal oxide film such as indium tin oxide (ITO), indium zinc oxide (Indium Zinc Oxide, IZO), and SiO 2 . The conductive layer is preferably a first electrode pattern, a second electrode pattern, and other conductive elements used in the capacitance type input device described later. Preferred embodiments of the other conductive layers will be described later in the description of the capacitance type input device.

(b)第一曝光步驟 第一曝光步驟中,經由貼合步驟後的正型感光性轉印材料的暫時支持體12,對正型感光性樹脂層14進行圖案曝光。(b) First Exposure Step In the first exposure step, the positive photosensitive resin layer 14 is subjected to pattern exposure through the temporary support 12 of the positive photosensitive transfer material after the bonding step.

作為本發明中的曝光步驟、顯影步驟、以及其他步驟的例子,本發明中亦可適合使用日本專利特開2006-23696號公報的段落編號[0035]~[0051]中記載的方法。As an example of the exposure step, the development step, and the other steps in the present invention, the method described in paragraphs [0035] to [0051] of JP-A-2006-23696 can also be suitably used in the present invention.

例如可列舉:於配置於第一導電層24上的正型感光性轉印材料100的上方(和與第一導電層24接觸的一側相反的一側)配置具有既定圖案的遮罩30,然後經由該遮罩30而自遮罩上方進行曝光的方法等。 本發明中,圖案的詳細配置以及具體尺寸並無特別限定。由於欲提高具備包括由本發明製造的電路配線的輸入裝置的顯示裝置(例如觸控面板)的顯示品質,另外,欲儘可能減小取出配線所佔的面積,故而圖案的至少一部分(特別是觸控面板的電極圖案及取出配線的部分)較佳為100 μm以下的細線,尤佳為70 μm以下。 此處,曝光中使用的光源若能夠照射使正型感光性轉印材料的經曝光的部位可溶解於顯影液中的波長域的光(例如365 nm、405 nm等),則可適當選定使用該光源。具體而言可列舉:超高壓水銀燈、高壓水銀燈、金屬鹵化物燈等。 曝光量通常為5 mJ/cm2 ~200 mJ/cm2 左右,較佳為10 mJ/cm2 ~100 mJ/cm2 左右。 另外,曝光後出於提高圖案的矩形性、直線性的目的,亦較佳為於顯影前進行熱處理。藉由所謂的稱為曝光後烘烤(Post Exposure Bake,PEB)的步驟,可減輕由曝光時於感光性樹脂層中產生的駐波所引起的圖案邊緣的粗糙。For example, a mask 30 having a predetermined pattern is disposed above the positive photosensitive material 100 disposed on the first conductive layer 24 (on the side opposite to the side in contact with the first conductive layer 24), Then, a method of performing exposure from the top of the mask via the mask 30 or the like is performed. In the present invention, the detailed arrangement of the patterns and the specific dimensions are not particularly limited. In order to improve the display quality of a display device (for example, a touch panel) including an input device including the circuit wiring manufactured by the present invention, and at least to reduce the area occupied by the extraction wiring, at least a part of the pattern (especially touch The electrode pattern of the control panel and the portion from which the wiring is taken out are preferably thin wires of 100 μm or less, and particularly preferably 70 μm or less. Here, if the light source used for the exposure can be irradiated with light in a wavelength range (for example, 365 nm, 405 nm, etc.) in which the exposed portion of the positive photosensitive material can be dissolved in the developer, the light source can be appropriately selected and used. The light source. Specifically, an ultrahigh pressure mercury lamp, a high pressure mercury lamp, a metal halide lamp, etc. are mentioned. The exposure amount is usually from about 5 mJ/cm 2 to about 200 mJ/cm 2 , preferably from about 10 mJ/cm 2 to about 100 mJ/cm 2 . Further, for the purpose of improving the rectangularity and linearity of the pattern after the exposure, it is also preferred to carry out heat treatment before development. By the so-called "Post Exposure Bake" (PEB) step, the roughness of the pattern edge caused by the standing wave generated in the photosensitive resin layer at the time of exposure can be alleviated.

此外,圖案曝光即便是於將暫時支持體自正型感光性樹脂層上剝離後進行,亦可於剝離暫時支持體之前,經由暫時支持體而進行曝光,然後剝離暫時支持體。為了防止由感光性樹脂層與遮罩的接觸所引起的遮罩污染、或避免由附著於遮罩上的異物所引起的對曝光的影響,較佳為不剝離暫時支持體而進行曝光。此外,圖案曝光可為經由遮罩的曝光,亦可為使用雷射等的數位曝光。Further, the pattern exposure may be performed after the temporary support is peeled off from the positive photosensitive resin layer, or may be exposed through the temporary support before the temporary support is peeled off, and then the temporary support may be peeled off. In order to prevent contamination of the mask caused by contact between the photosensitive resin layer and the mask, or to avoid the influence of exposure due to foreign matter adhering to the mask, it is preferred to perform exposure without peeling off the temporary support. Further, the pattern exposure may be exposure through a mask or digital exposure using a laser or the like.

(c)第一顯影步驟 第一顯影步驟中,自第一曝光步驟後的正型感光性樹脂層14上剝離暫時支持體12後,對第一曝光步驟後的正型感光性樹脂層14進行顯影而形成第一圖案14A。(c) First development step In the first development step, after the temporary support 12 is peeled off from the positive photosensitive resin layer 14 after the first exposure step, the positive photosensitive resin layer 14 after the first exposure step is subjected to Development is performed to form the first pattern 14A.

第一顯影步驟是藉由對經圖案曝光的正型感光性樹脂層進行顯影而形成第一圖案的步驟。 經圖案曝光的正型感光性樹脂層的顯影可使用顯影液來進行。 顯影液若可將正型感光性樹脂層的曝光部分去除,則並無特別制約,例如可使用日本專利特開平5-72724號公報中記載的顯影液等公知的顯影液。此外,顯影液較佳為正型感光性樹脂層的曝光部進行溶解型的顯影行為的顯影液。例如,較佳為以0.05 mol/L~5 mol/L的濃度包含pKa=7~13的化合物的顯影液,亦可進而添加少量的與水具有混合性的有機溶劑。與水具有混合性的有機溶劑可列舉:甲醇、乙醇、2-丙醇、1-丙醇、丁醇、二丙酮醇、乙二醇單甲醚、乙二醇單乙醚、乙二醇單-正丁醚、苄基醇、丙酮、甲基乙基酮、環己酮、ε-己內酯、γ-丁內酯、二甲基甲醯胺、二甲基乙醯胺、六甲基磷醯胺、乳酸乙酯、乳酸甲酯、ε-己內醯胺、N-甲基吡咯啶酮等。顯影液中的有機溶劑的濃度較佳為0.1質量%~30質量%。 顯影液中可進而添加公知的界面活性劑。顯影液中的界面活性劑的濃度較佳為0.01質量%~10質量%。The first developing step is a step of forming a first pattern by developing the pattern-exposed positive photosensitive resin layer. The development of the pattern-exposed positive photosensitive resin layer can be carried out using a developing solution. The developing solution is not particularly limited as long as the exposed portion of the positive photosensitive resin layer is removed. For example, a known developing solution such as a developing solution described in JP-A-5-72724 can be used. Further, the developer is preferably a developer in which the exposure portion of the positive photosensitive resin layer performs a dissolution type development operation. For example, a developer containing a compound having a pKa of 7 to 13 at a concentration of 0.05 mol/L to 5 mol/L is preferably used, and a small amount of an organic solvent miscible with water may be further added. Examples of the organic solvent which is miscible with water include methanol, ethanol, 2-propanol, 1-propanol, butanol, diacetone alcohol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, and ethylene glycol mono- N-butyl ether, benzyl alcohol, acetone, methyl ethyl ketone, cyclohexanone, ε-caprolactone, γ-butyrolactone, dimethylformamide, dimethylacetamide, hexamethylphosphorus Guanidine, ethyl lactate, methyl lactate, ε-caprolactam, N-methylpyrrolidone, and the like. The concentration of the organic solvent in the developer is preferably from 0.1% by mass to 30% by mass. A known surfactant can be further added to the developer. The concentration of the surfactant in the developer is preferably from 0.01% by mass to 10% by mass.

顯影方式可為覆液顯影、噴淋顯影、噴淋及旋轉顯影、浸漬顯影等的任一種。此處,若對噴淋顯影進行說明,則可藉由噴淋對曝光後的正型感光性樹脂層吹附顯影液,從而去除曝光部分。此外,於設置有熱塑性樹脂層、中間層、或者CE層等的情況下,亦較佳為於顯影之前,藉由噴淋等,吹附正型感光性樹脂層的溶解性低的洗滌液,預先去除熱塑性樹脂層、中間層、CE層等。另外,較佳為於顯影後,藉由噴淋來吹附洗滌劑等,一邊以刷子等擦拭,一邊去除顯影殘渣。顯影液的液體溫度較佳為20℃~40℃,另外,顯影液的pH值較佳為8~13。The development method may be any one of liquid coating development, shower development, shower and rotation development, immersion development, and the like. Here, when the shower development is described, the developer can be blown onto the exposed positive photosensitive resin layer by spraying to remove the exposed portion. In addition, when a thermoplastic resin layer, an intermediate layer, or a CE layer or the like is provided, it is also preferred to spray a washing liquid having a low solubility of the positive photosensitive resin layer by spraying or the like before development. The thermoplastic resin layer, the intermediate layer, the CE layer, and the like are removed in advance. Moreover, it is preferable to remove the development residue while wiping off with a brush or the like by spraying the detergent or the like after the development. The liquid temperature of the developer is preferably from 20 ° C to 40 ° C, and the pH of the developer is preferably from 8 to 13.

進而,亦可包括對顯影而獲得的包含正型感光性樹脂層的圖案進行加熱處理的後烘烤步驟。 後烘烤的加熱較佳為於0.08 atm~1.2 atm的環境下進行,更佳為於0.5 atm以上的環境下進行。另一方面,更佳為於1.1 atm以下的環境下進行,特佳為於1.0 atm以下的環境下進行。進而,就不使用特別的減壓裝置、可降低製造成本的觀點而言,進而特佳為於約1 atm(大氣壓)環境下進行。 後烘烤的溫度較佳為110℃~170℃,更佳為120℃~160℃,特佳為130℃~150℃。 後烘烤的時間較佳為1分鐘~30分鐘,更佳為2分鐘~10分鐘,特佳為2分鐘~4分鐘。 後烘烤可於空氣環境下進行,亦可於氮置換環境下進行,但就不使用特別的減壓裝置、可降低製造成本的觀點而言,特佳為空氣環境下進行。Further, a post-baking step of heat-treating the pattern containing the positive photosensitive resin layer obtained by development may be included. The post-baking heating is preferably carried out in an environment of 0.08 atm to 1.2 atm, more preferably in an environment of 0.5 atm or more. On the other hand, it is preferably carried out in an environment of 1.1 atm or less, and particularly preferably in an environment of 1.0 atm or less. Further, it is particularly preferably carried out in an environment of about 1 atm (atmospheric pressure) from the viewpoint of not reducing the production cost without using a special pressure reducing device. The post-baking temperature is preferably from 110 ° C to 170 ° C, more preferably from 120 ° C to 160 ° C, particularly preferably from 130 ° C to 150 ° C. The post-baking time is preferably from 1 minute to 30 minutes, more preferably from 2 minutes to 10 minutes, and particularly preferably from 2 minutes to 4 minutes. The post-baking can be carried out in an air atmosphere or in a nitrogen-substituted environment, but it is preferably carried out in an air environment from the viewpoint of not reducing the production cost without using a special pressure-reducing device.

亦可包括後曝光步驟等其他步驟。Other steps such as a post-exposure step may also be included.

(d)第一蝕刻步驟 第一蝕刻步驟中,對未配置第一圖案14A的區域中的多個導電層24、26中的至少第一導電層24及第二導電層26進行蝕刻處理。藉由蝕刻,形成具有相同圖案的第一導電層24A及第二導電層26A。(d) First etching step In the first etching step, at least the first conductive layer 24 and the second conductive layer 26 of the plurality of conductive layers 24, 26 in the region where the first pattern 14A is not disposed are subjected to an etching treatment. The first conductive layer 24A and the second conductive layer 26A having the same pattern are formed by etching.

導電層的蝕刻可利用日本專利特開2010-152155公報的段落[0048]~[0054]等中記載的方法等公知的方法,來應用蝕刻。The etching of the conductive layer can be applied by a known method such as the method described in paragraphs [0048] to [0054] of JP-A-2010-152155, and the like.

例如,蝕刻的方法可列舉通常進行的浸漬於蝕刻液中的濕式蝕刻法。濕式蝕刻中使用的蝕刻液只要根據蝕刻的對象來適當選擇酸性類型或者鹼性類型的蝕刻液即可。 酸性類型的蝕刻液可例示:鹽酸、硫酸、氫氟酸、磷酸等酸性成分單一的水溶液,酸性成分與氯化鐵、氟化銨、過錳酸鉀等鹽的混合水溶液等。酸性成分亦可使用將多種酸性成分組合而成的成分。 鹼性類型的蝕刻液可例示:氫氧化鈉、氫氧化鉀、氨、有機胺、氫氧化四甲基銨之類的有機胺的鹽等鹼性成分單一的水溶液,鹼性成分與過錳酸鉀等鹽的混合水溶液等。鹼性成分亦可使用將多種鹼性成分組合而成的成分。For example, a method of etching can be exemplified by a wet etching method which is usually performed by immersing in an etching liquid. The etching liquid used in the wet etching may be appropriately selected from an acid type or an alkaline type etching liquid depending on the object to be etched. The acid type etching liquid may, for example, be an aqueous solution having a single acidic component such as hydrochloric acid, sulfuric acid, hydrofluoric acid or phosphoric acid, or a mixed aqueous solution of an acidic component with a salt such as ferric chloride, ammonium fluoride or potassium permanganate. As the acidic component, a component obtained by combining a plurality of acidic components can also be used. The alkaline type etching liquid can be exemplified by a single aqueous solution of a basic component such as a salt of an organic amine such as sodium hydroxide, potassium hydroxide, ammonia, an organic amine or tetramethylammonium hydroxide, and an alkaline component and permanganic acid. A mixed aqueous solution of a salt such as potassium. As the alkaline component, a component obtained by combining a plurality of basic components can also be used.

蝕刻液的溫度並無特別限定,較佳為45℃以下。本發明中用作蝕刻掩模(蝕刻圖案)的第一圖案較佳為對45℃以下的溫度區域中的酸性及鹼性的蝕刻液發揮特別優異的耐性。因此,於蝕刻步驟中防止正型感光性樹脂層剝離,正型感光性樹脂層不存在的部分被選擇性地蝕刻。The temperature of the etching solution is not particularly limited, but is preferably 45 ° C or lower. The first pattern used as an etching mask (etching pattern) in the present invention preferably exhibits particularly excellent resistance to an acidic and alkaline etching liquid in a temperature region of 45 ° C or lower. Therefore, the positive photosensitive resin layer is prevented from being peeled off in the etching step, and the portion where the positive photosensitive resin layer is not present is selectively etched.

蝕刻後,為了防止步驟線的污染,視需要可進行洗滌步驟及乾燥步驟。關於洗滌步驟,例如於常溫下利用純水將基板洗滌10秒~300秒來進行,關於乾燥步驟,例如使用鼓風機,適當調整鼓風壓(0.1 kg/cm2 ~5 kg/cm2 左右)來進行乾燥即可。After the etching, in order to prevent contamination of the step line, a washing step and a drying step may be performed as needed. The washing step is carried out, for example, by washing the substrate with pure water at normal temperature for 10 seconds to 300 seconds, and for the drying step, for example, using a blower, the blast pressure (about 0.1 kg/cm 2 to 5 kg/cm 2 ) is appropriately adjusted. Dry it.

(e)第二曝光步驟 第一蝕刻步驟後,以與第一圖案不同的圖案,對第一蝕刻步驟後的第一圖案14A進行圖案曝光。(e) Second Exposure Step After the first etching step, the first pattern 14A after the first etching step is subjected to pattern exposure in a pattern different from the first pattern.

第二曝光步驟中,對殘存於第一導電層上的第一圖案,對至少與於後述的第二顯影步驟中第一導電層的應去除的部分相當的部位進行曝光。 第二曝光步驟中的圖案曝光除了使用圖案與第一曝光步驟中使用的遮罩30不同的遮罩40以外,可應用與第一曝光步驟中的圖案曝光相同的方法。In the second exposure step, the first pattern remaining on the first conductive layer is exposed to at least a portion corresponding to the portion of the first conductive layer to be removed in the second development step to be described later. The pattern exposure in the second exposure step may be applied in the same manner as the pattern exposure in the first exposure step, except that the mask 40 having a pattern different from that of the mask 30 used in the first exposure step is used.

(f)第二顯影步驟 第二顯影步驟中,對第二曝光步驟後的第一圖案14A進行顯影而形成第二圖案14B。 藉由顯影,將第一圖案中的於第二曝光步驟中經曝光的部分去除。 此外,第二顯影步驟中,可應用與第一顯影步驟中的顯影相同的方法。(f) Second Developing Step In the second developing step, the first pattern 14A after the second exposure step is developed to form the second pattern 14B. The exposed portion of the first pattern in the second exposure step is removed by development. Further, in the second developing step, the same method as the development in the first developing step can be applied.

(g)第二蝕刻步驟 第二蝕刻步驟中,對未配置第二圖案14B的區域中的多個導電層24A、24B中的至少第一導電層24A進行蝕刻處理。(g) Second etching step In the second etching step, at least the first conductive layer 24A of the plurality of conductive layers 24A, 24B in the region where the second pattern 14B is not disposed is subjected to an etching treatment.

第二蝕刻步驟中的蝕刻除了根據應藉由蝕刻而去除的導電層來選擇蝕刻液以外,可應用與第一蝕刻步驟中的蝕刻相同的方法。 第二蝕刻步驟中,較佳為根據所需的圖案,對較第一蝕刻步驟更少的導電層進行選擇性蝕刻。例如,如圖2所示,可藉由在未配置正型感光性樹脂層的區域中,使用僅對第一導電層24B進行選擇性蝕刻的蝕刻液來進行蝕刻,從而將第一導電層形成為與第二導電層的圖案不同的圖案。 第二蝕刻步驟結束後,形成包含至少兩種圖案的導電層24B、26A的電路配線。The etching in the second etching step may be the same as the etching in the first etching step, except that the etching liquid is selected in accordance with the conductive layer to be removed by etching. In the second etching step, it is preferred to selectively etch the conductive layer less than the first etching step according to the desired pattern. For example, as shown in FIG. 2, the first conductive layer can be formed by etching using an etching liquid that selectively etches only the first conductive layer 24B in a region where the positive photosensitive resin layer is not disposed. It is a pattern different from the pattern of the second conductive layer. After the second etching step is completed, circuit wirings of the conductive layers 24B, 26A including at least two patterns are formed.

(h)正型感光性樹脂層去除步驟 第二蝕刻步驟結束後,於第一導電層24B上的一部分中殘存第二圖案14B。若正型感光性樹脂層不需要,則只要將殘存的全部正型感光性樹脂層14B去除即可。(h) Positive Photosensitive Resin Layer Removal Step After the second etching step is completed, the second pattern 14B remains in a portion of the first conductive layer 24B. If the positive photosensitive resin layer is not required, all of the remaining positive photosensitive resin layers 14B may be removed.

將殘存的正型感光性樹脂層去除的方法並無特別限制,可列舉藉由化學品處理而去除的方法。 正型感光性樹脂層的去除方法例如可列舉如下方法:於30℃~80℃、較佳為50℃~80℃下,將具有正型感光性樹脂層等的基材於攪拌中的剝離液中浸漬5分鐘~30分鐘。 用作蝕刻掩模的正型感光性樹脂層可為於45℃以下顯示出優異的耐藥液性的樹脂層,但較佳為若藥液溫度達到50℃以上,則顯示出藉由鹼性的剝離液而膨潤的性質。藉由所述性質而具有如下優點:若使用50℃~80℃的剝離液來進行剝離步驟,則步驟時間縮短,正型感光性樹脂層的剝離殘渣減少。即,藉由在蝕刻步驟與將殘留的正型感光性樹脂層去除的步驟之間對藥液溫度設置差,則用作蝕刻掩模的正型感光性樹脂層於蝕刻步驟中發揮良好的耐藥液性,另一方面,於去除步驟中顯示出良好的剝離性,可同時滿足耐藥液性與剝離性這兩種相反的特性。The method of removing the remaining positive photosensitive resin layer is not particularly limited, and a method of removing it by chemical treatment can be mentioned. For the method of removing the positive photosensitive resin layer, for example, a peeling liquid in which a substrate having a positive photosensitive resin layer or the like is stirred at 30 to 80 ° C, preferably 50 to 80 ° C, is used. Immerse for 5 minutes to 30 minutes. The positive photosensitive resin layer used as an etching mask may be a resin layer which exhibits excellent resistance to liquidity at 45 ° C or lower, but preferably exhibits alkalinity if the temperature of the chemical liquid reaches 50 ° C or higher. The nature of the peeling liquid and the swelling. According to the above properties, when the peeling step is performed using a peeling liquid of 50° C. to 80° C., the step time is shortened, and the peeling residue of the positive photosensitive resin layer is reduced. In other words, the positive photosensitive resin layer serving as an etching mask exhibits good resistance in the etching step by setting a difference in the temperature of the chemical solution between the etching step and the step of removing the remaining positive photosensitive resin layer. The liquid chemical property, on the other hand, exhibits good peeling property in the removal step, and can simultaneously satisfy the two opposite characteristics of the drug resistance liquidity and the peeling property.

剝離液例如可列舉:將氫氧化鈉、氫氧化鉀等無機鹼性成分,或者三級胺、四級銨鹽等有機鹼性成分,溶解於水、二甲基亞碸、N-甲基吡咯啶酮、或者該些的混合溶液中而成的剝離液。亦可使用剝離液,利用噴射法、噴淋法、覆液法等來剝離。Examples of the peeling liquid include an inorganic alkaline component such as sodium hydroxide or potassium hydroxide, or an organic alkaline component such as a tertiary amine or a quaternary ammonium salt, and are dissolved in water, dimethyl hydrazine, and N-methylpyrrole. A retort or a stripping solution obtained by mixing the solutions. The peeling liquid can also be used and peeled off by a spray method, a shower method, a liquid coating method, or the like.

本發明的電路配線的製造方法亦可包括其他的任意步驟。例如可列舉如以下所述的步驟,但並不限定於該些步驟。The method of manufacturing the circuit wiring of the present invention may also include any other steps. For example, the steps described below can be cited, but are not limited to the steps.

<貼附保護膜的步驟> 於第一蝕刻步驟之後、第二曝光步驟之前,亦可更包括於第一圖案上貼附具有透光性的保護膜(未圖示)的步驟。 該情況下,較佳為於第二曝光步驟中,經由保護膜而對第一圖案進行圖案曝光,且於第二曝光步驟後,自第一圖案上剝離保護膜後,進行第二蝕刻步驟。<Step of Attaching Protective Film> After the first etching step and before the second exposure step, a step of attaching a light-transmitting protective film (not shown) to the first pattern may be further included. In this case, it is preferable that the first pattern is subjected to pattern exposure through the protective film in the second exposure step, and after the second exposure step, the protective film is peeled off from the first pattern, and then the second etching step is performed.

<使可見光線反射率下降的步驟> 本發明的電路配線的製造方法可包括進行使基材上的多個導電層的一部分或者全部的可見光線反射率下降的處理的步驟。 使可見光線反射率下降的處理可列舉氧化處理等。例如,藉由對銅進行氧化處理而形成氧化銅,從而黑化,藉此可使可見光線反射率下降。 關於使可見光線反射率下降的處理的較佳形態,於日本專利特開2014-150118號公報的[0017]~[0025]、以及日本專利特開2013-206315號公報的[0041]、[0042]、[0048]及[0058]中有記載,該公報的內容併入本說明書中。<Step of Decreasing Visible Light Reflectance> The method of manufacturing a circuit wiring of the present invention may include a step of performing a process of reducing a visible light reflectance of a part or all of a plurality of conductive layers on a substrate. The treatment for lowering the reflectance of visible light can be exemplified by oxidation treatment or the like. For example, copper oxide is formed by oxidizing copper to be blackened, whereby the visible light reflectance can be lowered. A preferred embodiment of the process for reducing the reflectance of the visible light is [0017] to [0025] of JP-A-2014-150118, and [0041], [0042] of JP-A-2013-206315. It is described in [0048] and [0058], and the contents of this publication are incorporated in the present specification.

<於絕緣膜上形成新的導電層的步驟> 本發明的電路配線的製造方法亦較佳為包括:於所形成的電路配線上形成絕緣膜的步驟、以及於絕緣膜上形成新的導電層的步驟。 藉由如上所述的構成,可使後述第二電極圖案一邊與第一電極圖案絕緣一邊形成。 關於形成絕緣膜的步驟並無特別限制,可列舉公知的形成永久膜的方法。另外,亦可使用具有絕緣性的感光性材料,利用光微影法來形成所需圖案的絕緣膜。 關於在絕緣膜上形成新的導電層的步驟並無特別限制。亦可使用具有導電性的感光性材料,利用光微影法來形成所需圖案的新的導電層。<Step of Forming New Conductive Layer on Insulating Film> The method of manufacturing the circuit wiring of the present invention preferably further includes the steps of forming an insulating film on the formed circuit wiring, and forming a new conductive layer on the insulating film A step of. According to the configuration described above, the second electrode pattern described later can be formed while being insulated from the first electrode pattern. The step of forming the insulating film is not particularly limited, and a known method of forming a permanent film can be mentioned. Further, an insulating film having a desired pattern may be formed by a photolithography method using an insulating photosensitive material. The step of forming a new conductive layer on the insulating film is not particularly limited. It is also possible to use a photosensitive photosensitive material to form a new conductive layer of a desired pattern by photolithography.

另外,於參照圖2的說明中,已對如下情況進行了說明,即,對具備2層導電層的電路配線形成用基板形成具有兩種不同圖案的電路配線的情況,但應用本發明的電路配線的製造方法的基板的導電層的數量並不限定為2層,亦可藉由使用積層有3層以上的導電層的電路配線形成用基板,將所述的曝光步驟、顯影步驟及蝕刻步驟的組合進行3次以上,從而將3層以上的導電層分別形成為不同的電路配線圖案。In addition, in the description with reference to FIG. 2, a case has been described in which a circuit wiring having two different patterns is formed on a circuit wiring forming substrate including two conductive layers, but the circuit of the present invention is applied. The number of the conductive layers of the substrate in the method of manufacturing the wiring is not limited to two, and the substrate for forming a circuit wiring in which three or more conductive layers are laminated may be used, and the exposure step, development step, and etching step may be performed. The combination is performed three times or more, thereby forming three or more conductive layers into different circuit wiring patterns.

另外,圖2中未示出,但本發明的電路配線的製造方法亦較佳為:基材於兩側表面分別包括多個導電層,對於形成於基材的兩側表面的導電層,逐次或同時形成電路。藉由如上所述的構成,可形成於基材的一個表面形成有第一導電圖案、且於另一個表面形成有第二導電圖案的觸控面板用電路配線。另外,亦較佳為藉由輥對輥,自基材的兩面形成所述構成的觸控面板用電路配線。In addition, although not shown in FIG. 2, the manufacturing method of the circuit wiring of the present invention is also preferably: the substrate includes a plurality of conductive layers on both side surfaces, and the conductive layers formed on both side surfaces of the substrate are successively applied. Or form a circuit at the same time. According to the configuration described above, the circuit wiring for a touch panel in which the first conductive pattern is formed on one surface of the substrate and the second conductive pattern is formed on the other surface can be formed. Further, it is also preferable that the circuit wiring for the touch panel having the above configuration is formed from both surfaces of the substrate by a roll-to-roller.

[電路配線] 利用本發明的電路配線的製造方法來製造的電路配線的用途並無限定,例如較佳為觸控面板用電路配線。關於觸控面板用電路配線的較佳形態,後文於靜電電容型輸入裝置的說明中進行說明。[Circuit Wiring] The use of the circuit wiring manufactured by the method of manufacturing the circuit wiring of the present invention is not limited, and for example, it is preferably a circuit wiring for a touch panel. A preferred embodiment of the circuit wiring for the touch panel will be described later in the description of the capacitance type input device.

圖3中示出觸控面板用電路配線的一例,來作為可利用本發明的電路配線的製造方法來製造的電路配線的實施方式之一。圖3中,於基材1上形成第一電極圖案3,且於第一電極圖案上形成其他的導電性要素6。圖3所示的觸控面板用電路配線成為包括以下兩種圖案的導電層的電路配線:形成有與第一電極圖案3不同的其他導電性要素的導電層積層體、以及僅具有第一電極圖案3的導電層。 若自斜上方向來觀察如圖3的觸控面板用電路配線,則成為如圖4所示。圖4所示的觸控面板用電路配線的一例中,圖4的虛線部分為形成有與第一電極圖案3不同的其他導電性要素的導電層積層體,圖4的四邊形相連的部分為僅具有第一電極圖案3的導電層。如上所述,本發明的電路配線的製造方法較佳為:於電路配線中所含的具有不同種類的圖案的導電層中,包含具有至少一種圖案的導電層共有同一電路圖案的2層以上的導電層積層體。FIG. 3 shows an example of a circuit wiring for a touch panel, and is one of the embodiments of the circuit wiring that can be manufactured by the method of manufacturing the circuit wiring of the present invention. In FIG. 3, the first electrode pattern 3 is formed on the substrate 1, and other conductive elements 6 are formed on the first electrode pattern. The circuit wiring for a touch panel shown in FIG. 3 is a circuit wiring including a conductive layer of the following two patterns: a conductive layered body in which another conductive element different from the first electrode pattern 3 is formed, and only the first electrode Conductive layer of pattern 3. When the circuit wiring for the touch panel of FIG. 3 is observed from the obliquely upward direction, it is as shown in FIG. In an example of the circuit wiring for a touch panel shown in FIG. 4, the broken line portion in FIG. 4 is a conductive layered body in which other conductive elements different from the first electrode pattern 3 are formed, and the portion in which the quadrilateral of FIG. 4 is connected is only A conductive layer having the first electrode pattern 3. As described above, in the method of manufacturing the circuit wiring of the present invention, it is preferable that the conductive layer having a different type of pattern included in the circuit wiring includes two or more layers in which the conductive layers having at least one pattern share the same circuit pattern. Conductive layer laminate.

[輸入裝置以及顯示裝置] 具備利用本發明的電路配線的製造方法來製造的電路配線的裝置可列舉輸入裝置。本發明中的輸入裝置較佳為靜電電容型觸控面板。 本發明中的顯示裝置具備本發明的輸入裝置。本發明中的顯示裝置較佳為圖像顯示裝置。[Input Device and Display Device] An input device is exemplified as a device including the circuit wiring manufactured by the method of manufacturing the circuit wiring of the present invention. The input device in the present invention is preferably an electrostatic capacitance type touch panel. The display device of the present invention includes the input device of the present invention. The display device in the present invention is preferably an image display device.

<具備靜電電容型輸入裝置、及靜電電容型輸入裝置的圖像顯示裝置> 作為本發明中的輸入裝置及顯示裝置的較佳形態的靜電電容型輸入裝置、以及具備該靜電電容型輸入裝置作為構成要素的圖像顯示裝置可應用:《最新觸控面板技術》(2009年7月6日發行,技術時代(Techno Times)(股));三谷雄二主編的「觸控面板的技術與開發」,CMC出版(2004,12);2009國際平板顯示器論壇(FPD(Flat Panel Display)International 2009 Forum)T-11講座教材,賽普拉斯半導體公司(Cypress Semiconductor Corporation)應用註解AN2292等中揭示的構成。<Image display device including a capacitive input device and a capacitive input device> A capacitive input device that is a preferred embodiment of the input device and the display device of the present invention, and a capacitive input device The image display device of the components can be applied: "The Latest Touch Panel Technology" (released on July 6, 2009, Techno Times), and "Technology and Development of Touch Panels" edited by Mitani Yuji , CMC Publishing (2004, 12); 2009 International Flat Panel Display Forum (FPD (Flat Panel Display) International 2009 Forum) T-11 lecture materials, Cypress Semiconductor Corporation (Cypress Semiconductor Corporation) application notes AN2292 and other disclosures .

首先,對靜電電容型輸入裝置的構成進行說明。圖5是表示靜電電容型輸入裝置的構成的剖面圖。圖5中,靜電電容型輸入裝置10包括:基材1、遮罩層2、第一電極圖案3、第二透明電極圖案4、絕緣層5、其他的導電性要素6、以及透明保護層7。First, the configuration of the capacitance type input device will be described. Fig. 5 is a cross-sectional view showing the configuration of a capacitance type input device. In FIG. 5, the capacitance type input device 10 includes a substrate 1, a mask layer 2, a first electrode pattern 3, a second transparent electrode pattern 4, an insulating layer 5, other conductive elements 6, and a transparent protective layer 7. .

基材1包括玻璃基板等透光性基板,可使用康寧公司的大猩猩玻璃所代表的強化玻璃等。另外,圖5中,將前面層1的設置有各要素的一側稱為非接觸面。靜電電容型輸入裝置10中,使手指等與基材1的接觸面(非接觸面的相反的面)接觸等而進行輸入。本說明書中,有將前面板稱為「基材」的情況。The base material 1 includes a light-transmitting substrate such as a glass substrate, and tempered glass represented by Corning's Gorilla Glass can be used. In addition, in FIG. 5, the side of the front layer 1 in which each element is provided is called a non-contact surface. In the capacitance type input device 10, a finger or the like is brought into contact with a contact surface (a surface opposite to the non-contact surface) of the substrate 1 to be input. In this specification, the front panel is referred to as a "substrate".

另外,於基材1的非接觸面上設置有遮罩層2。遮罩層2為於觸控面板前面板的非接觸側所形成的顯示區域周圍的框狀的圖案,為了看不到引回配線等而形成。 靜電電容型輸入裝置10上,亦可以覆蓋基材1的一部分區域的方式設置遮罩層2。進而,基材1上,可於一部分上設置開口部。可於開口部設置藉由擠壓的機械開關。Further, a mask layer 2 is provided on the non-contact surface of the substrate 1. The mask layer 2 is a frame-like pattern around the display region formed on the non-contact side of the front panel of the touch panel, and is formed in order to prevent the lead wiring or the like from being seen. The mask layer 2 may be provided on the capacitance type input device 10 so as to cover a part of the substrate 1. Further, on the substrate 1, an opening portion may be provided in a part. A mechanical switch by squeezing may be provided at the opening.

於基材1的接觸面形成有:多個墊部分經由連接部分而在第一方向上延伸形成的多個第一電極圖案3、與第一電極圖案3電性絕緣且包含在與第一方向交叉的方向上延伸形成的多個墊部分的多個第二透明電極圖案4、以及使第一電極圖案3與第二透明電極圖案4電性絕緣的絕緣層5。第一電極圖案3、第二透明電極圖案4、以及後述的其他導電性要素6可利用例如氧化銦錫(Indium Tin Oxide,ITO)或者氧化銦鋅(Indium Zinc Oxide,IZO)等透光性的導電性金屬氧化膜來製作。如上所述的金屬膜可列舉:ITO膜;Al、Zn、Cu、Fe、Ni、Cr、Mo等的金屬膜;SiO2 等的金屬氧化膜等。此時,各要素的膜厚可設為10 nm~200 nm。另外,藉由煅燒,將非晶的ITO膜形成多結晶的ITO膜,因此亦可減小電阻。 另外,第一電極圖案3、以及第二透明電極圖案4較佳為使用正型感光性樹脂層作為抗蝕刻劑(蝕刻圖案)來形成。用以形成第二透明電極圖案的第二電極層的形成中,除了使用以本發明所使用的正型感光性樹脂層為代表的抗蝕劑的光微影法以外,可使用公知的方法。除此以外,亦可使用包含使用導電性纖維的感光性樹脂組成物的感光性轉印材料來製造。於利用ITO等來形成第一導電性圖案等的情況下,可以日本專利第4506785號公報的段落[0014]~[0016]等作為參考。Forming a contact surface of the substrate 1 with a plurality of first electrode patterns 3 formed by extending a plurality of pad portions in a first direction via the connection portion, electrically insulated from the first electrode patterns 3, and included in the first direction A plurality of second transparent electrode patterns 4 of a plurality of pad portions formed to extend in a crossing direction, and an insulating layer 5 electrically insulating the first electrode patterns 3 from the second transparent electrode patterns 4. The first electrode pattern 3, the second transparent electrode pattern 4, and other conductive elements 6 to be described later can be made of, for example, indium tin oxide (ITO) or indium zinc oxide (Indium Zinc Oxide, IZO). Conductive metal oxide film is produced. Examples of the metal film as described above include an ITO film; a metal film of Al, Zn, Cu, Fe, Ni, Cr, Mo, or the like; a metal oxide film of SiO 2 or the like. In this case, the film thickness of each element can be set to 10 nm to 200 nm. Further, since the amorphous ITO film is formed into a polycrystalline ITO film by firing, the electric resistance can also be reduced. Further, the first electrode pattern 3 and the second transparent electrode pattern 4 are preferably formed using an positive photosensitive resin layer as an etch resist (etching pattern). In the formation of the second electrode layer for forming the second transparent electrode pattern, a known method can be used in addition to the photolithography method using a resist typified by the positive photosensitive resin layer used in the present invention. Alternatively, it may be produced by using a photosensitive transfer material containing a photosensitive resin composition using conductive fibers. In the case where the first conductive pattern or the like is formed by using ITO or the like, paragraphs [0014] to [0016] of Japanese Patent No. 4506785 can be referred to.

另外,第一電極圖案3及第二透明電極圖案4的至少一者可橫跨基材1的非接觸面以及遮罩層2的與基材1相反側的面的兩側區域而設置。圖5中示出第二透明電極圖案橫跨基材1的非接觸面以及遮罩層2的與基材1相反側的面的兩側區域而設置的圖。Further, at least one of the first electrode pattern 3 and the second transparent electrode pattern 4 may be provided across the non-contact surface of the substrate 1 and the both side regions of the surface of the mask layer 2 opposite to the substrate 1 . FIG. 5 shows a view in which the second transparent electrode pattern is provided across the non-contact surface of the substrate 1 and the both side regions of the surface of the mask layer 2 opposite to the substrate 1.

使用圖6及圖7,對第一電極圖案3及第二電極圖案4進行說明。圖6及圖7亦為表示第一電極圖案及第二電極圖案的一例的說明圖。如圖6及圖7所示,第一電極圖案3的墊部分3a經由連接部分3b而在第一方向上延伸形成。另外,第二電極圖案4藉由絕緣層5而與第一電極圖案電性絕緣,且包含在與第一方向交叉的方向(圖3中的第二方向)上延伸形成的多個墊部分。此處,於形成第一電極圖案3的情況下,可將墊部分3a與連接部分3b製作成一體,亦可僅製作連接部分3b,且將墊部分3a與第二透明電極圖案4製作(圖案化)成一體。於將墊部分3a與第二透明電極圖案4製作(圖案化)成一體的情況下,如圖6及圖7所示,以連接部分3b的一部分與墊部分3a的一部分連結,且藉由絕緣層5而使第一電極圖案3與第二透明電極圖案4電性絕緣的方式形成各層。The first electrode pattern 3 and the second electrode pattern 4 will be described with reference to FIGS. 6 and 7 . 6 and 7 are explanatory views showing an example of the first electrode pattern and the second electrode pattern. As shown in FIGS. 6 and 7, the pad portion 3a of the first electrode pattern 3 is formed to extend in the first direction via the connection portion 3b. In addition, the second electrode pattern 4 is electrically insulated from the first electrode pattern by the insulating layer 5, and includes a plurality of pad portions extending in a direction crossing the first direction (the second direction in FIG. 3). Here, in the case where the first electrode pattern 3 is formed, the pad portion 3a and the connection portion 3b may be integrally formed, or only the connection portion 3b may be formed, and the pad portion 3a and the second transparent electrode pattern 4 may be formed (pattern Into one. When the pad portion 3a and the second transparent electrode pattern 4 are formed (patterned) integrally, as shown in FIGS. 6 and 7, a part of the connection portion 3b is connected to a part of the pad portion 3a, and is insulated by Each layer is formed in such a manner that the first electrode pattern 3 and the second transparent electrode pattern 4 are electrically insulated from each other.

圖5中,於遮罩層2的與基材1相反側的一面側設置有其他的導電性要素6。其他的導電性要素6是與第一電極圖案3及第二透明電極圖案4的至少一者電性連接,且與第一電極圖案3及第二透明電極圖案4不同的其他要素。圖5中示出其他的導電性要素6與第二透明電極圖案4連接的圖。In FIG. 5, another conductive element 6 is provided on one surface side of the mask layer 2 opposite to the substrate 1. The other conductive element 6 is electrically connected to at least one of the first electrode pattern 3 and the second transparent electrode pattern 4 and has other elements different from the first electrode pattern 3 and the second transparent electrode pattern 4. FIG. 5 shows a view in which another conductive element 6 is connected to the second transparent electrode pattern 4.

另外,圖5中,以覆蓋各構成要素的全部的方式設置有透明保護層7。透明保護層7亦可以僅覆蓋各構成要素的一部分的方式來構成。絕緣層5與透明保護層7可為同一材料,亦可為不同材料。構成絕緣層5及透明保護層7的材料較佳為表面硬度及耐熱性高的材料,使用公知的感光性矽氧烷樹脂材料、丙烯酸樹脂材料等,該些材料為本領域技術人員所公知。 除了光微影方式以外,絕緣層的圖案化方法亦可使用噴墨、網版等公知的方法。In addition, in FIG. 5, the transparent protective layer 7 is provided so that it may cover all the components. The transparent protective layer 7 may be configured to cover only a part of each constituent element. The insulating layer 5 and the transparent protective layer 7 may be the same material or different materials. The material constituting the insulating layer 5 and the transparent protective layer 7 is preferably a material having high surface hardness and heat resistance, and a known photosensitive siloxane resin material, acrylic resin material or the like is used, and such materials are well known to those skilled in the art. In addition to the photolithography method, a known method such as inkjet or screen printing may be used for the patterning method of the insulating layer.

靜電電容型輸入裝置的製造方法中,第一電極圖案3、第二透明電極圖案4及其他的導電性要素6中的至少1個較佳為使用正型感光性樹脂層作為抗蝕刻劑(蝕刻圖案)來進行蝕刻處理而形成。另外,亦較佳為黑色的遮罩層2、絕緣層5、及視需要的透明保護層7的至少一要素亦使用依次包括暫時支持體、熱塑性樹脂層及光硬化性樹脂層的感光性膜來形成。In the method of manufacturing the capacitance type input device, at least one of the first electrode pattern 3, the second transparent electrode pattern 4, and the other conductive elements 6 preferably uses a positive photosensitive resin layer as an etch resist (etching The pattern is formed by performing an etching process. Further, it is preferable that at least one element of the black mask layer 2, the insulating layer 5, and the optional transparent protective layer 7 also uses a photosensitive film including a temporary support, a thermoplastic resin layer, and a photocurable resin layer in this order. To form.

第一電極圖案3、第二透明電極圖案4及其他的導電性要素6中的至少1個較佳為使用正型感光性樹脂層作為抗蝕刻劑(蝕刻圖案)來進行蝕刻處理而形成。 於藉由蝕刻處理來形成第一電極圖案3、第二透明電極圖案4及其他的導電性要素6的情況下,首先於形成有黑色遮罩層2等的基材1的非接觸面上,對設置有黑色遮罩層2的部分至少設置無機絕緣層,藉由濺鍍而於基材1的非接觸面上或者無機絕緣層上形成ITO等透明電極層。繼而,使用於透明電極層上具有蝕刻用光硬化性樹脂層作為光硬化性樹脂層的正型感光性樹脂層,藉由曝光及顯影來形成蝕刻圖案。然後,對透明電極層進行蝕刻而使透明電極圖案化,去除蝕刻圖案,藉此可形成第一電極圖案3等。At least one of the first electrode pattern 3, the second transparent electrode pattern 4, and the other conductive elements 6 is preferably formed by performing an etching treatment using an positive photosensitive resin layer as an etch resist (etching pattern). When the first electrode pattern 3, the second transparent electrode pattern 4, and other conductive elements 6 are formed by etching, first on the non-contact surface of the substrate 1 on which the black mask layer 2 or the like is formed, At least an inorganic insulating layer is provided on a portion where the black mask layer 2 is provided, and a transparent electrode layer such as ITO is formed on the non-contact surface of the substrate 1 or the inorganic insulating layer by sputtering. Then, a positive photosensitive resin layer having an etching photocurable resin layer as a photocurable resin layer on the transparent electrode layer is used to form an etching pattern by exposure and development. Then, the transparent electrode layer is etched to pattern the transparent electrode, and the etching pattern is removed, whereby the first electrode pattern 3 and the like can be formed.

於使用具有導電性光硬化性樹脂層的感光性膜來形成第一電極圖案3、第二透明電極圖案4以及其他的導電性要素6的情況下,可藉由在基材1的表面上,對設置有黑色遮罩層2的部分至少設置無機絕緣層,於基材1的非接觸面上或者無機絕緣層上轉印導電性光硬化性樹脂層而形成。In the case where the first electrode pattern 3, the second transparent electrode pattern 4, and other conductive elements 6 are formed using a photosensitive film having a conductive photocurable resin layer, by being on the surface of the substrate 1, At least an inorganic insulating layer is provided on a portion where the black mask layer 2 is provided, and a conductive photocurable resin layer is transferred onto the non-contact surface of the substrate 1 or the inorganic insulating layer.

遮罩層2、絕緣層5及透明保護層7可藉由使用感光性膜,將光硬化性樹脂層轉印於基材1上而形成。例如,於形成黑色遮罩層2的情況下,可藉由使用具有黑色光硬化性樹脂層作為光硬化性樹脂層的感光性膜,於基材1的表面轉印黑色光硬化性樹脂層而形成。於形成絕緣層5的情況下,可藉由使用包括絕緣性的光硬化性樹脂層作為光硬化性樹脂層的感光性膜,於形成有第一或第二透明電極圖案的基材1的表面轉印光硬化性樹脂層而形成。於形成透明保護層7的情況下,可藉由使用包括透明的光硬化性樹脂層作為光硬化性樹脂層的感光性膜,於形成有各要素的基材1的表面轉印光硬化性樹脂層而形成。 [實施例]The mask layer 2, the insulating layer 5, and the transparent protective layer 7 can be formed by transferring a photocurable resin layer onto the substrate 1 by using a photosensitive film. For example, when the black mask layer 2 is formed, a black light curable resin layer can be transferred onto the surface of the substrate 1 by using a photosensitive film having a black photocurable resin layer as a photocurable resin layer. form. In the case of forming the insulating layer 5, the surface of the substrate 1 on which the first or second transparent electrode pattern is formed can be used by using a photosensitive film including an insulating photocurable resin layer as a photocurable resin layer. It is formed by transferring a photocurable resin layer. When the transparent protective layer 7 is formed, a photocurable resin can be transferred onto the surface of the substrate 1 on which the respective elements are formed by using a photosensitive film including a transparent photocurable resin layer as a photocurable resin layer. Formed by layers. [Examples]

以下列舉實施例,對本發明進一步進行具體說明。以下的實施例中所示的材料、使用量、比例、處理內容、處理順序等只要不脫離本發明的主旨,則可適當變更。因此,本發明的範圍並不限定於以下所示的具體例。此外,只要無特別說明,則「份」、「%」為質量基準。The present invention will be further specifically described below by way of examples. The materials, the amounts, the ratios, the treatment contents, the treatment procedures, and the like shown in the following examples can be appropriately changed without departing from the gist of the invention. Therefore, the scope of the present invention is not limited to the specific examples shown below. In addition, "parts" and "%" are quality standards unless otherwise specified.

[實施例1] 以如下的配方來製作正型感光性樹脂組成物。 ・聚合體成分(具有下述構成單元的聚合體A1,重量平均分子量為5.0×103 ):7.73份 ・塑化劑(下述化合物B,重量平均分子量為1,216):1.93份 ・光酸產生劑(日本專利特開2013-047765的段落0227中記載的下述化合物A-1):0.25份 ・界面活性劑(下述界面活性劑C):0.01份 ・添加劑(下述化合物D):0.08份 ・丙二醇單甲醚乙酸酯:90.00份[Example 1] A positive photosensitive resin composition was produced in the following formulation.・Polymer component (polymer A1 having the following structural unit, weight average molecular weight: 5.0 × 10 3 ): 7.73 parts, plasticizer (Compound B below, weight average molecular weight: 1,216): 1.93 parts • Photoacid generation The following compound A-1 described in paragraph 0227 of JP-A-2013-047765: 0.25 parts, surfactant (the following surfactant C): 0.01 part, additive (the following compound D): 0.08 Parts propylene glycol monomethyl ether acetate: 90.00 parts

聚合體A1:具有下述構成單元的聚合體 [化25] Polymer A1: Polymer having the following constituent units [Chem. 25]

化合物B [化26] Compound B [Chem. 26]

日本專利特開2013-047765的段落0227中記載的化合物A-1 [化27] Compound A-1 described in paragraph 0227 of Japanese Patent Laid-Open No. 2013-047765 [Chem. 27]

界面活性劑C:含全氟烷基的非離子界面活性劑(F-554,迪愛生(DIC)公司製造)Surfactant C: Perfluoroalkyl-containing nonionic surfactant (F-554, manufactured by Di Ai Sheng (DIC) Co., Ltd.)

化合物D:下述結構的鹼性化合物(製造商:東洋化成工業公司製造,產品編號:CMTU) [化28] Compound D: a basic compound of the following structure (manufacturer: manufactured by Toyo Chemical Co., Ltd., product number: CMTU) [Chem. 28]

使用狹縫狀噴嘴,以乾燥膜厚成為2.5 μm的方式,將所製作的正型感光性樹脂組成物塗佈於成為暫時支持體的厚度50 μm的聚對苯二甲酸乙二酯膜(以下稱為「PET(A)」)上。然後,利用100℃的對流烘箱來乾燥2分鐘,最後壓接聚乙烯膜(屈德加(Tredegar)公司製造,OSM-N)作為覆蓋膜而製作正型感光性轉印材料1。The positive photosensitive resin composition produced was applied to a polyethylene terephthalate film having a thickness of 50 μm as a temporary support by using a slit nozzle so that the dry film thickness was 2.5 μm (hereinafter Called "PET (A)"). Then, it was dried by a convection oven at 100 ° C for 2 minutes, and finally a polyethylene film (manufactured by Tredegar Co., Ltd., OSM-N) was pressure-bonded to form a positive photosensitive transfer material 1 as a cover film.

此外,PET(A)的全光霧度為0.19%。膜霧度是使用斯加試驗機(Suga Test Instruments)(股)製造的霧度計HZ-2,依據JIS-K-7136來測定基礎小片的全光霧值(%)。Further, the total haze of PET (A) was 0.19%. The film haze was a haze meter HZ-2 manufactured by Suga Test Instruments, and the total haze value (%) of the base piece was measured in accordance with JIS-K-7136.

[實施例2] 除了將聚合體成分及塑化劑的使用量設為以下以外,以與實施例1相同的方式製作正型感光性轉印材料2。 ・聚合體成分(聚合體A1):8.21份 ・塑化劑(化合物B):1.45份[Example 2] A positive photosensitive transfer material 2 was produced in the same manner as in Example 1 except that the amount of the polymer component and the plasticizer used was changed to the following.・Polymer component (polymer A1): 8.21 parts ・Plasticizer (Compound B): 1.45 parts

[實施例3] 除了將聚合體成分及塑化劑的使用量設為以下以外,以與實施例1相同的方式製作正型感光性轉印材料3。 ・聚合體成分(聚合體A1):7.25份 ・塑化劑(化合物B):2.41份[Example 3] A positive photosensitive transfer material 3 was produced in the same manner as in Example 1 except that the amount of the polymer component and the plasticizer used was changed to the following.・Polymer component (polymer A1): 7.25 parts ・Plasticizer (Compound B): 2.41 parts

[比較例1] 以如下配方來製作正型感光性樹脂組成物。 ・聚合體成分(對羥基苯乙烯的1-乙氧基乙基保護體/對羥基苯乙烯共聚物,30莫耳%/70莫耳%,分子量為1.1×104 ):9.58份 ・光酸產生劑(依據日本專利特表2002-528451號公報的段落編號0108中記載的方法來合成的下述結構的化合物;此外,下述結構中,Ts表示對甲苯磺醯基):0.2份[Comparative Example 1] A positive photosensitive resin composition was produced in the following formulation.・Polymer component (1-ethoxyethyl protecting agent/p-hydroxystyrene copolymer of p-hydroxystyrene, 30 mol%/70 mol%, molecular weight: 1.1×10 4 ): 9.58 parts • photoacid Producer (a compound of the following structure synthesized according to the method described in Paragraph No. 0108 of JP-A-2002-528451; in addition, in the following structure, Ts represents p-toluenesulfonyl): 0.2 part

[化29] [化29]

・增感劑(9,10-二丁氧基蒽):0.2份 ・界面活性劑(界面活性劑C):0.01份 ・添加劑(化合物D):0.01份 ・丙二醇單甲醚乙酸酯:90.00份・Sensitizer (9,10-dibutoxyanthracene): 0.2 parts ・Interfacial surfactant (surfactant C): 0.01 parts ・Additive (Compound D): 0.01 parts ・ Propylene glycol monomethyl ether acetate: 90.00 Share

以與實施例1相同的方式,將該感光性樹脂組成物塗佈於PET(A)上,使其乾燥,製作正型感光性轉印材料4。In the same manner as in Example 1, the photosensitive resin composition was applied onto PET (A) and dried to prepare a positive photosensitive transfer material 4.

[評價] 使用於厚度為188 μm的PET膜上,以厚度500 nm且利用濺鍍法而製作有銅層的基板。[Evaluation] A substrate having a copper layer was formed on a PET film having a thickness of 188 μm by a sputtering method at a thickness of 500 nm.

<層壓適應性評價> 將所製作的正型感光性轉印材料1~正型感光性轉印材料4分別切割為50 cm見方,剝離覆蓋膜,以線壓為0.6 MPa、線速度(層壓速度)為1.0 m/min或3.6 m/min.的層壓條件,層壓於帶有銅層的PET基板上。使層壓輥溫度變化來進行層壓,對在各溫度下感光性樹脂層密合於銅層上的面積進行目視評價,根據「感光性樹脂層所密合的面積/切割的轉印材料的面積」(%)來求出密合的面積比例。依據下述基準的A~C來評價。 A:95%以上 B:90%以上且小於95% C:小於90%<Layerability evaluation> The positive photosensitive photosensitive material 1 to the positive photosensitive transfer material 4 were cut into 50 cm squares, and the cover film was peeled off to have a linear pressure of 0.6 MPa and a linear velocity (layer). Lamination conditions of a press speed of 1.0 m/min or 3.6 m/min. were laminated on a PET substrate with a copper layer. The laminate roll was changed in temperature and laminated, and the area where the photosensitive resin layer was adhered to the copper layer at each temperature was visually evaluated, and the area to which the photosensitive resin layer was adhered/the transferred transfer material was The area "%" is used to find the area ratio of the adhesion. It is evaluated according to the following criteria A to C. A: 95% or more B: 90% or more and less than 95% C: less than 90%

<解析度評價> 將所製作的正型感光性轉印材料1~正型感光性轉印材料4,於層壓適應性成為A的最低的層壓輥溫度下,層壓(線壓為0.6 MPa,線速度為3.6 m/min.)於帶有銅層的PET基板上,不剝離暫時支持體,經由線寬為20 μm的線與空間圖案遮罩而以超高壓水銀燈進行曝光後,剝離暫時支持體來進行顯影。使用23℃的2.38%氫氧化四甲基銨(TMAH)水溶液,藉由噴淋顯影來進行30秒的顯影。以所述方式來求出可形成20 μm的線與空間圖案的曝光量,作為最佳曝光量。 繼而,經由多種線寬的線與空間圖案遮罩,以相同的方式以最佳曝光量進行曝光,以相同的方式進行顯影時,將與遮罩相同的線寬的線與空間可解析的最小的圖案尺寸作為解析度。 以下於表1中示出結果。<Identification of the resolution> The positive photosensitive photosensitive material 1 to the positive photosensitive transfer material 4 produced were laminated at the lowest laminating roll temperature at which the lamination adaptability was A (the linear pressure was 0.6). MPa, linear velocity: 3.6 m/min.) On a PET substrate with a copper layer, the temporary support was not peeled off, and exposed by an ultrahigh pressure mercury lamp through a line and space pattern with a line width of 20 μm. The support is temporarily supported for development. Development was carried out for 30 seconds by spray development using a 2.38% aqueous solution of 2.38% tetramethylammonium hydroxide (TMAH) at 23 °C. The exposure amount at which a line and space pattern of 20 μm can be formed was obtained in the above manner as the optimum exposure amount. Then, through various line width line and space pattern masks, exposure is performed in the same manner with an optimal exposure amount, and when developing in the same manner, the line and space which are the same line width as the mask can be resolved least. The pattern size is used as the resolution. The results are shown in Table 1 below.

[表1] [Table 1]

實施例的正型感光性轉印材料即便為同一解析度,亦可於較比較例的感光性轉印材料而言更低的溫度下進行轉印,可獲得廣泛的製程裕量。Even if the positive photosensitive transfer material of the example has the same resolution, it can be transferred at a lower temperature than the photosensitive transfer material of the comparative example, and a wide process margin can be obtained.

[實施例10] 於100微米厚的PET基材上,藉由濺鍍且以150 nm厚度將ITO成膜而作為第二導電層,於其上,利用真空蒸鍍法且以200 nm厚度將銅成膜而作為第一導電層,形成電路形成用基板。[Example 10] On a 100 μm thick PET substrate, ITO was formed by sputtering and a thickness of 150 nm as a second conductive layer, on which vacuum evaporation method was used and at a thickness of 200 nm Copper is formed into a film to form a circuit for forming a circuit as a first conductive layer.

於銅層上層壓正型感光性轉印材料1(線壓為0.6 MPa,線速度為3.6 m/min,輥溫度為100℃)。 不剝離暫時支持體,使用具有在一方向上連結有導電層墊的構成的設置有圖8所示的圖案A的光罩,進行接觸圖案曝光(第一曝光步驟)。 圖8所示的圖案A的實線部及灰部為遮光部,其他部分為開口部,虛線部假想地示出對準的框。另外,實線部設為70 μm以下的細線。以下,於其他的實施例以及比較例中亦形成同樣的細線。A positive photosensitive transfer material 1 was laminated on the copper layer (linear pressure of 0.6 MPa, linear velocity of 3.6 m/min, and roll temperature of 100 ° C). The contact pattern exposure (first exposure step) is performed by using a photomask provided with the pattern A shown in FIG. 8 having a configuration in which a conductive layer pad is connected in one direction without peeling off the temporary support. The solid line portion and the ash portion of the pattern A shown in FIG. 8 are light blocking portions, and the other portions are openings, and the broken line portions imaginarily show aligned frames. Further, the solid line portion is set to a thin line of 70 μm or less. Hereinafter, the same thin lines are formed in the other examples and comparative examples.

然後,剝離暫時支持體,使用氫氧化四甲基銨(TMAH)水溶液2.38%進行顯影(第一顯影步驟),然後,進行水洗,獲得具有第一圖案(圖案A的遮光部區域的形狀的圖案)形狀的正型感光性樹脂層。Then, the temporary support was peeled off, and development was carried out using 2.38% aqueous solution of tetramethylammonium hydroxide (TMAH) (first development step), followed by washing with water to obtain a pattern having the shape of the first pattern (the pattern of the light-shielding portion of the pattern A). A positive photosensitive resin layer of a shape.

繼而,使用銅蝕刻液(關東化學(股)製造,Cu-02),對銅層(第一導電層)進行蝕刻後,使用ITO蝕刻液(關東化學(股)製造,ITO-02),對ITO層(第二導電層)進行蝕刻,藉此獲得銅層(第一導電層)與ITO層(第二導電層)均以第一圖案(圖案A的遮光部區域的形狀的圖案)來描繪的基板(第一蝕刻步驟)。Then, using a copper etching solution (manufactured by Kanto Chemical Co., Ltd., Cu-02), the copper layer (first conductive layer) was etched, and then an ITO etching solution (manufactured by Kanto Chemical Co., Ltd., ITO-02) was used. The ITO layer (second conductive layer) is etched, whereby the copper layer (first conductive layer) and the ITO layer (second conductive layer) are each depicted in a first pattern (a pattern of the shape of the light shielding portion region of the pattern A) Substrate (first etching step).

繼而,於使對準相符的狀態下,使用設置有圖9所示的圖案B的開口部及遮光部的光罩來進行圖案曝光(第二曝光步驟),使用TMAH水溶液2.38%進行顯影(第二顯影步驟),然後,進行水洗而獲得具有第二圖案(圖案A的遮光部及圖案B的遮光部的重疊部分的圖案)形狀的正型感光性樹脂層。 圖9所示的圖案B的灰部為遮光部,其他部分為開口部,虛線部假想地表示對準的框。Then, in a state where the alignment is matched, pattern exposure is performed using a mask provided with the opening of the pattern B and the light-shielding portion shown in FIG. 9 (second exposure step), and development is performed using 2.38% of an aqueous solution of TMAH (No. The second development step) is followed by water washing to obtain a positive photosensitive resin layer having a shape of a second pattern (a pattern of a light-shielding portion of the pattern A and a pattern of overlapping portions of the light-shielding portions of the pattern B). The ash portion of the pattern B shown in FIG. 9 is a light shielding portion, the other portion is an opening portion, and the broken line portion imaginarily indicates an aligned frame.

然後,使用Cu-02對銅層進行蝕刻,使用剝離液(關東化學(股)製造的KP-301)將殘留的感光性樹脂層剝離,獲得電路配線基板。 藉此,獲得圖10所示的圖案C的電路配線基板。圖10中,不為實線的區域為(白、灰區域均為)PET基板露出的狀態。圖10的灰區域內的實線部分成為ITO配線露出的狀態。其以外的實線部分相當於周邊配線部分,於ITO配線上積層銅配線,具有共有同一電路圖案的結構的狀態。Then, the copper layer was etched using Cu-02, and the remaining photosensitive resin layer was peeled off using a peeling liquid (KP-301 manufactured by Kanto Chemical Co., Ltd.) to obtain a circuit wiring board. Thereby, the circuit wiring board of the pattern C shown in FIG. 10 is obtained. In FIG. 10, the area which is not a solid line is a state in which the PET substrate is exposed (both white and gray areas). The solid line portion in the ash region of Fig. 10 is in a state in which the ITO wiring is exposed. The solid line portion other than the solid line portion corresponds to the peripheral wiring portion, and the copper wiring is laminated on the ITO wiring, and has a configuration in which the same circuit pattern is shared.

然後,藉由使用Cu-02,僅對作為第二圖案的未設置正型感光性樹脂層的區域的第一導電層(銅層)進行蝕刻(第二蝕刻步驟)。 進而使用剝離液(關東化學(股)製造的KP-301),將殘留的感光性樹脂層剝離而獲得電路配線基板。 藉此,獲得具有圖10所示的配線圖案C的電路配線基板。圖10中,不為實線的區域為(白、灰區域均為)PET基板露出的狀態。圖10的灰區域內的實線部分成為ITO配線(第二導電層)露出的狀態。其以外的實線部分相當於周邊配線部分,於ITO配線上積層銅配線(第一導電層),成為具有共有同一電路圖案的結構。 利用顯微鏡對所獲得的電路配線基板的電路進行觀察的結果為,圖案無剝落或缺損等,為高精細的清晰圖案。Then, by using Cu-02, only the first conductive layer (copper layer) which is a region of the second pattern in which the positive photosensitive resin layer is not provided is etched (second etching step). Further, a peeling liquid (KP-301 manufactured by Kanto Chemical Co., Ltd.) was used, and the remaining photosensitive resin layer was peeled off to obtain a circuit wiring board. Thereby, a circuit wiring board having the wiring pattern C shown in FIG. 10 is obtained. In FIG. 10, the area which is not a solid line is a state in which the PET substrate is exposed (both white and gray areas). The solid line portion in the ash region of FIG. 10 is in a state in which the ITO wiring (second conductive layer) is exposed. The other solid line portion corresponds to the peripheral wiring portion, and a copper wiring (first conductive layer) is laminated on the ITO wiring to have a structure in which the same circuit pattern is shared. As a result of observing the circuit of the obtained circuit wiring board by a microscope, the pattern was free from peeling or chipping, and was a high-definition clear pattern.

[實施例20] 於100微米厚的PET基材上,藉由濺鍍且以150 nm厚度將ITO成膜而作為第二導電層,於其上,利用真空蒸鍍法且以200 nm厚度將銅成膜而作為第一導電層,形成電路形成用基板。 於銅層上層壓(線壓為0.6 MPa,線速度為3.6 m/min,輥溫度為100℃)正型感光性轉印材料1。 不剝離暫時支持體,使用具有在一方向上連結有導電層墊的構成的設置有圖案A的光罩來進行圖案曝光。然後剝離暫時支持體,進行顯影,然後,進行水洗而獲得圖案A。 繼而,使用銅蝕刻液(關東化學(股)製造的Cu-02)對銅層進行蝕刻後,使用ITO蝕刻液(關東化學(股)製造的ITO-02)對ITO層進行蝕刻,藉此獲得銅與ITO均以圖案A來描繪的基板。[Example 20] On a 100 μm thick PET substrate, ITO was formed by sputtering and a thickness of 150 nm as a second conductive layer, on which vacuum evaporation method was used and thickness was 200 nm. Copper is formed into a film to form a circuit for forming a circuit as a first conductive layer. A positive photosensitive transfer material 1 was laminated on a copper layer (linear pressure of 0.6 MPa, linear velocity of 3.6 m/min, and roll temperature of 100 ° C). Pattern exposure is performed by using a mask provided with a pattern A having a structure in which a conductive layer pad is connected in one direction without peeling off the temporary support. Then, the temporary support was peeled off, developed, and then washed with water to obtain pattern A. Then, the copper layer was etched using a copper etching solution (Cu-02 manufactured by Kanto Chemical Co., Ltd.), and then the ITO layer was etched using an ITO etching solution (ITO-02 manufactured by Kanto Chemical Co., Ltd.). A substrate in which both copper and ITO are depicted in pattern A.

繼而,於殘存的抗蝕劑(正型感光性樹脂層)上再次層壓PET(A)作為保護膜。於該狀態下,於使對準相符的狀態下,使用設置有圖案B的開口部的光罩來進行圖案曝光,剝離覆蓋膜後進行顯影、水洗。 然後,使用Cu-02對銅配線進行蝕刻,使用剝離液(關東化學(股)製造的KP-301)將殘留的感光性樹脂層剝離,獲得電路配線基板。 藉此,獲得圖案C的電路配線基板。 利用顯微鏡對所獲得的電路配線基板的電路進行觀察的結果為,圖案無剝落或缺損等,為高精細的清晰圖案。Then, PET (A) was laminated again as a protective film on the remaining resist (positive type photosensitive resin layer). In this state, pattern exposure is performed using a mask provided with an opening of the pattern B in a state where the alignment is matched, and the cover film is peeled off, and development and water washing are performed. Then, the copper wiring was etched using Cu-02, and the remaining photosensitive resin layer was peeled off using a peeling liquid (KP-301 manufactured by Kanto Chemical Co., Ltd.) to obtain a circuit wiring board. Thereby, the circuit wiring board of the pattern C is obtained. As a result of observing the circuit of the obtained circuit wiring board by a microscope, the pattern was free from peeling or chipping, and was a high-definition clear pattern.

1‧‧‧基材
2‧‧‧遮罩層
3‧‧‧電極圖案
3a‧‧‧墊部分
3b‧‧‧連接部分
4‧‧‧透明電極圖案
5‧‧‧絕緣層
6‧‧‧其他的導電性要素
7‧‧‧透明保護層
10‧‧‧靜電電容型輸入裝置
12‧‧‧暫時支持體
14‧‧‧正型感光性樹脂層
14A‧‧‧第一圖案
14B‧‧‧第二圖案
16‧‧‧覆蓋膜
20‧‧‧電路形成用基板
22‧‧‧基材
24‧‧‧第一導電層
24A‧‧‧第一導電層(第一蝕刻步驟後)
24B‧‧‧第一導電層(第二蝕刻步驟後)
26‧‧‧第二導電層
26A‧‧‧第二導電層(第一蝕刻步驟以及第二蝕刻步驟後)
30‧‧‧遮罩
40‧‧‧遮罩
100‧‧‧正型感光性轉印材料
1‧‧‧Substrate
2‧‧‧mask layer
3‧‧‧electrode pattern
3a‧‧‧Piece part
3b‧‧‧Connected section
4‧‧‧Transparent electrode pattern
5‧‧‧Insulation
6‧‧‧Other conductive elements
7‧‧‧Transparent protective layer
10‧‧‧Electrostatic type input device
12‧‧‧ temporary support
14‧‧‧ Positive photosensitive resin layer
14A‧‧‧first pattern
14B‧‧‧second pattern
16‧‧‧ Cover film
20‧‧‧Substrate for circuit formation
22‧‧‧Substrate
24‧‧‧First conductive layer
24A‧‧‧First conductive layer (after the first etching step)
24B‧‧‧First conductive layer (after the second etching step)
26‧‧‧Second conductive layer
26A‧‧‧Second conductive layer (after the first etching step and the second etching step)
30‧‧‧ mask
40‧‧‧ mask
100‧‧‧正 type photosensitive transfer material

圖1是表示本發明的正型感光性轉印材料的層構成的一例的概略圖。 圖2是表示使用本發明的正型感光性轉印材料的觸控面板用電路配線的製造方法的一例的概略圖。 圖3是可利用本發明的電路配線的製造方法來製造的觸控面板用電路配線的一例的概略圖。 圖4是可利用本發明的電路配線的製造方法來製造的觸控面板用電路配線的一例的概略圖。 圖5是表示本發明的輸入裝置的一例的構成的概略圖。 圖6是表示第一電極圖案的墊部分及連接部分以及第二電極圖案的配置的一例的概略構成圖。 圖7是表示第一電極圖案的墊部分及連接部分以及第二電極圖案的配置的一例的概略立體圖。 圖8是表示圖案A的概略圖。 圖9是表示圖案B的概略圖。 圖10是表示圖案C的概略圖。FIG. 1 is a schematic view showing an example of a layer configuration of a positive photosensitive transfer material of the present invention. FIG. 2 is a schematic view showing an example of a method of manufacturing a circuit wiring for a touch panel using the positive photosensitive transfer material of the present invention. 3 is a schematic view showing an example of a circuit wiring for a touch panel which can be manufactured by the method for manufacturing a circuit wiring of the present invention. 4 is a schematic view showing an example of a circuit wiring for a touch panel which can be manufactured by the method for manufacturing a circuit wiring of the present invention. Fig. 5 is a schematic view showing a configuration of an example of an input device of the present invention. FIG. 6 is a schematic configuration diagram showing an example of the arrangement of the pad portion, the connection portion, and the second electrode pattern of the first electrode pattern. FIG. 7 is a schematic perspective view showing an example of the arrangement of the pad portion, the connection portion, and the second electrode pattern of the first electrode pattern. FIG. 8 is a schematic view showing a pattern A. FIG. 9 is a schematic view showing a pattern B. FIG. 10 is a schematic view showing a pattern C.

12‧‧‧暫時支持體 12‧‧‧ temporary support

14‧‧‧正型感光性樹脂層 14‧‧‧ Positive photosensitive resin layer

16‧‧‧覆蓋膜 16‧‧‧ Cover film

100‧‧‧正型感光性轉印材料 100‧‧‧正 type photosensitive transfer material

Claims (11)

一種正型感光性轉印材料,其包括: 暫時支持體;以及 正型感光性樹脂層,包含具有下述式A所表示的構成單元且重量平均分子量為1.0×105 以下的聚合體、重量平均分子量小於具有所述式A所表示的構成單元的聚合體的塑化劑、以及光酸產生劑,並且配置於所述暫時支持體上;式A中,R31 及R32 分別獨立地表示氫原子、烷基或芳基,至少R31 及R32 的任一者為烷基或芳基,R33 表示烷基或芳基,R31 或R32 、與R33 可連結而形成環狀醚,R34 表示氫原子或甲基,X0 表示單鍵或伸芳基。A positive photosensitive transfer material comprising: a temporary support; and a positive photosensitive resin layer comprising a polymer having a weight average molecular weight of 1.0 × 10 5 or less and having a structural unit represented by the following formula A; a plasticizer having an average molecular weight smaller than a polymer having the constituent unit represented by the formula A, and a photoacid generator, and disposed on the temporary support; In the formula A, R 31 and R 32 each independently represent a hydrogen atom, an alkyl group or an aryl group, and at least one of R 31 and R 32 is an alkyl group or an aryl group, and R 33 represents an alkyl group or an aryl group, and R 31 Or R 32 may be bonded to R 33 to form a cyclic ether, R 34 represents a hydrogen atom or a methyl group, and X 0 represents a single bond or an extended aryl group. 如申請專利範圍第1項所述的正型感光性轉印材料,其中所述塑化劑為分子內具有伸烷基氧基的化合物。The positive photosensitive transfer material according to claim 1, wherein the plasticizer is a compound having an alkylene group in the molecule. 如申請專利範圍第1項所述的正型感光性轉印材料,其中相對於所述正型感光性樹脂層的總固體成分,具有所述式A所表示的構成單元的聚合體與所述塑化劑的合計比率為70質量%以上、99質量%以下。The positive photosensitive transfer material according to claim 1, wherein the polymer having the constituent unit represented by the formula A is the same as the total solid content of the positive photosensitive resin layer. The total ratio of the plasticizer is 70% by mass or more and 99% by mass or less. 如申請專利範圍第1項所述的正型感光性轉印材料,其中於所述正型感光性樹脂層中,相對於具有所述式A所表示的構成單元的聚合體與所述塑化劑的合計量,具有所述式A所表示的構成單元的聚合體的比率為60質量%以上、90質量%以下。The positive photosensitive photosensitive material according to claim 1, wherein the positive photosensitive resin layer is polymerized with respect to the polymer having the constituent unit represented by the formula A and the plasticizing The ratio of the polymer having the constituent unit represented by the above formula A is 60% by mass or more and 90% by mass or less. 如申請專利範圍第2項所述的正型感光性轉印材料,其中相對於所述正型感光性樹脂層的總固體成分,具有所述式A所表示的構成單元的聚合體與所述塑化劑的合計比率為70質量%以上、99質量%以下,並且相對於具有所述式A所表示的構成單元的聚合體與所述塑化劑的合計量,具有所述式A所表示的構成單元的聚合體的比率為60質量%以上、90質量%以下。The positive photosensitive transfer material according to the second aspect of the invention, wherein the polymer having the constituent unit represented by the formula A and the total solid content of the positive photosensitive resin layer The total ratio of the plasticizer is 70% by mass or more and 99% by mass or less, and is represented by the formula A with respect to the total amount of the polymer having the constituent unit represented by the formula A and the plasticizer. The ratio of the polymer of the constituent unit is 60% by mass or more and 90% by mass or less. 如申請專利範圍第1項至第5項中任一項所述的正型感光性轉印材料,其中進而相對於所述正型感光性樹脂層的總固體成分100質量份,含有0.001質量份~10質量份的非離子系界面活性劑。The positive photosensitive transfer material according to any one of the first to fifth aspects of the present invention, further comprising 0.001 parts by mass based on 100 parts by mass of the total solid content of the positive photosensitive resin layer. ~10 parts by mass of a nonionic surfactant. 如申請專利範圍第6項所述的正型感光性轉印材料,其中所述非離子系界面活性劑為利用凝膠滲透層析法來測定的聚苯乙烯換算的重量平均分子量(Mw)為1.0×103 以上、1.0×104 以下,且包含下述式(I-1)所表示的構成單元A及構成單元B的共聚物,所述式(I-1)中,R401 及R403 分別獨立地表示氫原子或甲基,R402 表示碳數1以上、4以下的直鏈伸烷基,R404 表示氫原子或碳數1以上、4以下的烷基,L表示碳數3以上、6以下的伸烷基,p及q為表示聚合比的質量百分率,p表示10質量%以上、80質量%以下的數值,q表示20質量%以上、90質量%以下的數值,r表示1以上、18以下的整數,s表示1以上、10以下的整數)。The positive photosensitive photosensitive material according to claim 6, wherein the nonionic surfactant is a polystyrene-equivalent weight average molecular weight (Mw) measured by gel permeation chromatography. 1.0×10 3 or more and 1.0×10 4 or less, and a copolymer of the structural unit A and the structural unit B represented by the following formula (I-1), In the formula (I-1), R 401 and R 403 each independently represent a hydrogen atom or a methyl group, R 402 represents a linear alkylene group having 1 or more and 4 or less carbon atoms, and R 404 represents a hydrogen atom or a carbon number. 1 or more and 4 or less alkyl groups, L represents an alkylene group having 3 or more and 6 or less carbon atoms, p and q are mass percentages indicating a polymerization ratio, and p is a numerical value of 10% by mass or more and 80% by mass or less, and q is a value. A numerical value of 20% by mass or more and 90% by mass or less, r represents an integer of 1 or more and 18 or less, and s represents an integer of 1 or more and 10 or less. 如申請專利範圍第1項至第5項中任一項所述的正型感光性轉印材料,其中所述暫時支持體具有透光性。The positive photosensitive transfer material according to any one of the items 1 to 5, wherein the temporary support has a light transmissive property. 如申請專利範圍第6項所述的正型感光性轉印材料,其中所述暫時支持體具有透光性。The positive photosensitive transfer material according to claim 6, wherein the temporary support has light transmissivity. 一種電路配線的製造方法,其依次包括: (a)貼合步驟,對於基板,即,包括基材、以及包含構成材料相互不同的第一導電層及第二導電層的多個導電層,且於所述基材的表面上,以自遠離所述基材的表面起依次積層有作為最表面層的所述第一導電層與所述第二導電層的基板,使如申請專利範圍第9項所述的正型感光性轉印材料的所述正型感光性樹脂層與所述第一導電層接觸而貼合; (b)第一曝光步驟,經由所述貼合步驟後的所述正型感光性轉印材料的所述暫時支持體,對所述正型感光性樹脂層進行圖案曝光; (c)第一顯影步驟,自所述第一曝光步驟後的正型感光性樹脂層上剝離所述暫時支持體後,將所述第一曝光步驟後的正型感光性樹脂層進行顯影而形成第一圖案; (d)第一蝕刻步驟,對未配置所述第一圖案的區域中的所述多個導電層中的至少所述第一導電層及所述第二導電層進行蝕刻處理; (e)第二曝光步驟,以與所述第一圖案不同的圖案,對所述第一蝕刻步驟後的所述第一圖案進行圖案曝光; (f)第二顯影步驟,對所述第二曝光步驟後的所述第一圖案進行顯影而形成第二圖案;以及 (g)第二蝕刻步驟,對未配置所述第二圖案的區域中的所述多個導電層中的至少所述第一導電層進行蝕刻處理。A method of manufacturing a circuit wiring, comprising: (a) a bonding step for a substrate, that is, including a substrate, and a plurality of conductive layers including a first conductive layer and a second conductive layer different in composition materials, and On the surface of the substrate, a substrate of the first conductive layer and the second conductive layer as a frontmost layer is laminated in this order from the surface away from the substrate, so as to be ninth as claimed in the patent application. The positive photosensitive resin layer of the positive photosensitive transfer material according to the item is in contact with the first conductive layer and bonded; (b) a first exposure step, after the bonding step The temporary support of the positive photosensitive transfer material, the pattern exposure of the positive photosensitive resin layer; (c) the first development step, the positive photosensitive resin layer after the first exposure step After the temporary support is peeled off, the positive photosensitive resin layer after the first exposure step is developed to form a first pattern; (d) a first etching step for the region where the first pattern is not disposed Among the plurality of conductive layers Between the first conductive layer and the second conductive layer being etched; (e) a second exposure step, in a pattern different from the first pattern, the first after the first etching step The pattern is subjected to pattern exposure; (f) a second developing step of developing the first pattern after the second exposing step to form a second pattern; and (g) a second etching step, At least the first one of the plurality of conductive layers in the region of the two patterns is subjected to an etching process. 如申請專利範圍第10項所述的電路配線的製造方法,其中於所述第一蝕刻步驟之後、所述第二曝光步驟之前,更包括於所述第一圖案上貼附具有透光性的保護膜的步驟, 於所述第二曝光步驟中,經由所述保護膜而對所述第一圖案進行所述圖案曝光,並且 於所述第二曝光步驟後,自所述第一圖案上剝離所述保護膜後,進行所述第二蝕刻步驟。The method of manufacturing a circuit wiring according to claim 10, wherein after the first etching step and before the second exposure step, further comprising attaching the light transmissive to the first pattern a step of protecting the film, in the second exposing step, performing the pattern exposure on the first pattern via the protective film, and peeling off from the first pattern after the second exposing step After the protective film, the second etching step is performed.
TW105142025A 2015-12-21 2016-12-19 Positive photosensitive transfer materials and method for producing circuit wiring TWI698708B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015-249122 2015-12-21
JP2015249122A JP6573545B2 (en) 2015-12-21 2015-12-21 Positive photosensitive transfer material and method of manufacturing circuit wiring

Publications (2)

Publication Number Publication Date
TW201734637A true TW201734637A (en) 2017-10-01
TWI698708B TWI698708B (en) 2020-07-11

Family

ID=59234040

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105142025A TWI698708B (en) 2015-12-21 2016-12-19 Positive photosensitive transfer materials and method for producing circuit wiring

Country Status (3)

Country Link
JP (1) JP6573545B2 (en)
CN (1) CN106959585B (en)
TW (1) TWI698708B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI708997B (en) * 2018-06-22 2020-11-01 日商旭化成股份有限公司 Photosensitive resin composition, method for forming photoresist pattern, and method for manufacturing circuit board

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6808045B2 (en) * 2017-07-28 2021-01-06 富士フイルム株式会社 Photosensitive resin composition, photosensitive transfer material, circuit wiring manufacturing method, and touch panel manufacturing method
JP6995527B2 (en) * 2017-08-09 2022-01-14 日東電工株式会社 Conductive film for transfer
CN111279262A (en) * 2017-09-29 2020-06-12 富士胶片株式会社 Photosensitive transfer material, method for manufacturing circuit wiring, and method for manufacturing touch panel
CN111684359A (en) * 2018-02-05 2020-09-18 富士胶片株式会社 Photosensitive transfer material, method for manufacturing circuit wiring, and method for manufacturing touch panel
CN108776423B (en) * 2018-06-28 2020-10-30 信利光电股份有限公司 Manufacturing method and device of touch layer
CN113056373A (en) * 2018-11-20 2021-06-29 富士胶片株式会社 Transfer material, method for manufacturing resin pattern, method for manufacturing circuit wiring, and method for manufacturing touch panel

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5145764A (en) * 1990-04-10 1992-09-08 E. I. Du Pont De Nemours And Company Positive working resist compositions process of exposing, stripping developing
US5077174A (en) * 1990-04-10 1991-12-31 E. I. Du Pont De Nemours And Company Positive working dry film element having a layer of resist composition
US5229244A (en) * 1990-08-08 1993-07-20 E. I. Du Pont De Nemours And Company Dry processible photosensitive composition including photo-acid generator and optically clear polymer (co-polymer) blend that becomes tacky upon exposure to actinic radiation
JP2005303016A (en) * 2004-04-13 2005-10-27 Mitsui Chemicals Inc Manufacturing method of printed wiring substrate and its wiring substrate
CN100462825C (en) * 2005-12-23 2009-02-18 北京京东方光电科技有限公司 Array base board structure of thin film transistor liquid crystal display and its producing method
JP5425031B2 (en) * 2009-10-16 2014-02-26 富士フイルム株式会社 Photosensitive resin composition, method for forming cured film, cured film, organic EL display device, and liquid crystal display device
WO2011053100A2 (en) * 2009-11-02 2011-05-05 주식회사 엘지화학 Acrylate resin, photoresist composition comprising same, and photoresist pattern
CN102955361B (en) * 2011-08-19 2018-04-06 富士胶片株式会社 Positive-type photosensitive resin composition, the forming method of cured film, cured film, liquid crystal display device and organic EL display
CN105531627B (en) * 2013-09-13 2019-10-11 富士胶片株式会社 Photosensitive polymer combination, the manufacturing method of cured film, cured film, liquid crystal display device and organic EL display device
JP6361191B2 (en) * 2014-03-14 2018-07-25 日立化成株式会社 Photosensitive resin composition, photosensitive element, resist pattern forming method, and touch panel manufacturing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI708997B (en) * 2018-06-22 2020-11-01 日商旭化成股份有限公司 Photosensitive resin composition, method for forming photoresist pattern, and method for manufacturing circuit board

Also Published As

Publication number Publication date
JP6573545B2 (en) 2019-09-11
JP2017116611A (en) 2017-06-29
CN106959585B (en) 2022-02-25
TWI698708B (en) 2020-07-11
CN106959585A (en) 2017-07-18

Similar Documents

Publication Publication Date Title
CN113946103B (en) Dry film resist, method for manufacturing circuit wiring, input device, and display device
TWI698708B (en) Positive photosensitive transfer materials and method for producing circuit wiring
TWI660237B (en) Photosensitive transfer material, pattern forming method and etching method
CN109219777B (en) Method for manufacturing base material with pattern and method for manufacturing circuit board
JP6507239B2 (en) METHOD FOR MANUFACTURING CIRCUIT WIRING, CIRCUIT WIRING, INPUT DEVICE AND DISPLAY DEVICE
JP6574846B2 (en) Dry film resist, circuit wiring manufacturing method, circuit wiring, input device and display device
CN107132731B (en) Photosensitive transfer material and method for manufacturing circuit wiring
TWI708121B (en) Photosensitive transfer materials and method for producing circuit wiring
WO2018179640A1 (en) Photosensitive transferring material and method for producing circuit wiring
TWI767974B (en) Photosensitive transfer material and method for manufacturing circuit wiring
TW201922817A (en) Method for manufacturing circuit wiring and method for manufacturing touch panel
JP6685461B2 (en) Photosensitive transfer material, method for manufacturing circuit wiring, and method for manufacturing touch panel
JP6808045B2 (en) Photosensitive resin composition, photosensitive transfer material, circuit wiring manufacturing method, and touch panel manufacturing method
TW201928534A (en) Method for manufacturing circuit board and method for manufacturing touch panel
JP6685460B2 (en) Photosensitive transfer material, method for manufacturing circuit wiring, and method for manufacturing touch panel