TW201728772A - Device for a physical vapor deposition(PVD)process - Google Patents
Device for a physical vapor deposition(PVD)process Download PDFInfo
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- TW201728772A TW201728772A TW106103661A TW106103661A TW201728772A TW 201728772 A TW201728772 A TW 201728772A TW 106103661 A TW106103661 A TW 106103661A TW 106103661 A TW106103661 A TW 106103661A TW 201728772 A TW201728772 A TW 201728772A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32614—Consumable cathodes for arc discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/3288—Maintenance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3417—Arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
- H01J37/3491—Manufacturing of targets
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Abstract
Description
發明領域 本文件係關於用於具有改良緊固佈置之物理氣相沉積(PVD)方法的裝置。FIELD OF THE INVENTION This document relates to apparatus for physical vapor deposition (PVD) methods with improved fastening arrangements.
發明背景 在物理氣相沉積(PVD)方法中,諸如像在濺射方法中,使用陰極材料,亦稱為靶。靶材料在該方法期間耗損,因為靶之原子以物理方式被移除。對靶之習知利用程度為約20%。此意謂靶材料之相當大一部分未被使用。這主要歸咎於諸如像靶在PVD器材中之連接或緊固之限制因素。靶之習知連接手段包含外螺紋銷釘,該外螺紋銷釘緊固,亦即,螺紋連接,至靶之內螺紋中。因此而在靶材料內側延伸之螺紋部分長度嚴重限制靶之可用程度。BACKGROUND OF THE INVENTION In physical vapor deposition (PVD) processes, such as, for example, in sputtering methods, cathode materials, also referred to as targets, are used. The target material is depleted during the process because the atoms of the target are physically removed. The conventional utilization of the target is about 20%. This means that a significant portion of the target material is not used. This is mainly due to constraints such as the attachment or fastening of the target in the PVD fixture. Conventional attachment means for the target comprise an externally threaded pin that is fastened, that is, screwed, into the internal thread of the target. Thus the length of the threaded portion extending inside the target material severely limits the availability of the target.
已做出不同嘗試,試圖改變此等連接手段。在例如US6551470B1中,描述包含夾具及靶亦即代替銷釘及內螺紋之靶總成,該靶被夾緊。在具有夾具佈置的情況中所具有之一個困難在於,靶變得極熱且可卡在夾緊固持器中。因此,可能花費較長時間來改變靶材料,從而導致PVD方法之效率的降低。Different attempts have been made to try to change these connections. In, for example, US Pat. No. 6,551,470 B1, a target assembly comprising a clamp and a target, i.e., in place of a pin and an internal thread, is described, the target being clamped. One difficulty in having a clamp arrangement is that the target becomes extremely hot and can get stuck in the clip fastener. Therefore, it may take a long time to change the target material, resulting in a decrease in the efficiency of the PVD method.
因此,需要一種用於靶或陰極之新連接佈置,其不僅提供更大程度地利用靶之方式,而且提供更換所用靶之安全且容易的方式。Therefore, there is a need for a new connection arrangement for a target or cathode that not only provides a means to utilize the target to a greater extent, but also provides a safe and easy way to replace the target used.
發明概要 本揭示內容之目標為提供用於物理氣相沉積方法之改良裝置,其消除或弱化先前技術靶之缺點中之至少一些。SUMMARY OF THE INVENTION It is an object of the present disclosure to provide an improved apparatus for a physical vapor deposition process that eliminates or attenuates at least some of the disadvantages of prior art targets.
更多特定目標包括提供用於具有改良緊固佈置或連接之物理氣相沉積方法的裝置。More specific objectives include providing means for physical vapor deposition methods with improved fastening arrangements or connections.
本發明係藉由隨附獨立申請專利範圍界定。實施例闡述於隨附從屬申請專利範圍及以下描述及圖式中。The invention is defined by the scope of the accompanying independent patent application. The examples are set forth in the accompanying claims and the following description and drawings.
根據第一態樣,提供用於物理氣相沉積方法之裝置,其中該裝置具有圓柱形主體,且其中該主體包含底側、頂側、上部及下部,其中該下部包含緊固佈置,其中位於裝置之下部處的該緊固佈置包含至少一個外部凹槽,其中該凹槽圍繞該圓柱形主體之圓周至少部分地延伸。According to a first aspect, there is provided a device for a physical vapor deposition method, wherein the device has a cylindrical body, and wherein the body comprises a bottom side, a top side, an upper portion and a lower portion, wherein the lower portion comprises a fastening arrangement, wherein The fastening arrangement at the lower portion of the device comprises at least one outer groove, wherein the groove extends at least partially around the circumference of the cylindrical body.
用於物理氣相沉積(PVD)方法之裝置意謂諸如用於PVD方法之靶或陰極的裝置,該PVD方法諸如濺射方法、電弧蒸發方法或離子電鍍方法。與用於PVD方法之其中陰極具備內螺紋的習知靶或陰極對比,此裝置之緊固佈置提供用於對靶或陰極之更好程度的利用。A device for a physical vapor deposition (PVD) method means a device such as a target or a cathode for a PVD method, such as a sputtering method, an arc evaporation method, or an ion plating method. In contrast to conventional targets or cathodes for PVD methods in which the cathode is internally threaded, the fastening arrangement of the device provides for a better degree of utilization of the target or cathode.
至少一個凹槽可包含螺紋部分,該螺紋部分在縱向方向上自底側延伸至自頂側之一距離,且在裝置主體之下部上延伸。The at least one groove may include a threaded portion that extends from the bottom side to a distance from the top side in the longitudinal direction and extends over the lower portion of the device body.
裝置之外部凹槽能夠在其被加熱時向外膨脹,從而將裝置夾緊至例如PVD器材之對應固持器部分中。具有外部凹槽或螺紋之靶亦較容易且較便宜地生產。The outer groove of the device can expand outwardly as it is heated, thereby clamping the device into a corresponding retainer portion, such as a PVD fixture. Targets with external grooves or threads are also easier and cheaper to produce.
螺紋部分可包含粗螺紋。The threaded portion can include a coarse thread.
粗螺紋可幫助來在裝置已被使用之後有助於裝置自固持器部分之移除。The coarse thread can help to facilitate removal of the device from the holder portion after the device has been used.
裝置可適於緊固在對應固持器部分中。此意謂裝置之緊固佈置適於緊固在固持器部分中或連接至固持器部分。The device may be adapted to be secured in a corresponding holder portion. This means that the fastening arrangement of the device is adapted to be fastened in the holder portion or to the holder portion.
固持器部分可包含爪形離合器。The retainer portion can include a dog clutch.
固持器部分可具備內螺紋部分,該內螺紋部分配對地可連接至外螺紋部分。The holder portion can be provided with an internally threaded portion that is matingly connectable to the externally threaded portion.
裝置可為基於金屬的裝置或基於化合物的裝置中之任一者。The device can be any of a metal based device or a compound based device.
基於金屬的裝置意謂大體包含純金屬、合金或金屬之混合物的靶或陰極材料。A metal-based device means a target or cathode material that generally comprises a mixture of pure metals, alloys or metals.
基於化合物的裝置意謂包含氧化物、氮化物、硼化物、硫化物、硒化物、碲化物、碳化物、結晶及複雜混合物之靶或陰極材料。A compound-based device means a target or cathode material comprising oxides, nitrides, borides, sulfides, selenides, tellurides, carbides, crystals, and complex mixtures.
根據第二態樣,提供包含根據第一態樣之裝置及固持器部分的系統。According to a second aspect, a system comprising a device according to a first aspect and a holder portion is provided.
固持器部分可具備內螺紋部分,該內螺紋部分配對地可連接至裝置之外螺紋部分。The retainer portion can be provided with an internally threaded portion that is mated to the threaded portion of the device.
固持器部分可包含偏置佈置,該偏置佈置經構造或佈置以使得其可朝向裝置之緊固佈置偏置或按壓固持器部分以用於濺射方法。The holder portion can include an offset arrangement that is constructed or arranged such that it can bias or press the holder portion toward the fastening arrangement of the device for the sputtering method.
固持器部分可包含至少一個爪形離合器,該至少一個爪形離合器適於配對地可連接至至少一個凹槽。該系統可進一步包含至少兩個爪形離合器及固持器環,該固持器環適於經佈置來朝向裝置按壓該等爪形離合器。The holder portion can include at least one dog clutch adapted to be mated to the at least one groove. The system can further include at least two dog clutches and a retainer ring adapted to be arranged to press the dog clutches toward the device.
詳細說明 圖1例示用於PVD方法之裝置1,諸如靶或陰極。在以下描述中,將使用用於PVD或濺射方法之裝置、靶或靶裝置等詞。裝置1具有圓柱形狀或主體,且具有底側2及頂側3。頂側3為裝置或靶之在PVD方法期間耗損的部分。自底側3且沿朝向頂側之方向向上,下部4經定義為主體之至頂側延伸大體一半的部分。上部5經定義為圓柱形主體之自相對方向至底側延伸至大體一半的部分。DETAILED DESCRIPTION Figure 1 illustrates a device 1 for a PVD process, such as a target or cathode. In the following description, the terms "device, target or target device" for PVD or sputtering methods will be used. The device 1 has a cylindrical shape or body and has a bottom side 2 and a top side 3. The top side 3 is the portion of the device or target that is depleted during the PVD process. From the bottom side 3 and upward in the direction towards the top side, the lower portion 4 is defined as the portion of the body that extends substantially halfway to the top side. The upper portion 5 is defined as a portion of the cylindrical body that extends from the opposite direction to the bottom side to substantially half.
裝置1之下部4提供包含至少一個凹槽7之緊固佈置。凹槽7可沿裝置1之主體之圓周至少部分地延伸。在一個替代型式中,凹槽7沿圓周間歇地開槽(未展示)。The lower portion 4 of the device 1 provides a fastening arrangement comprising at least one groove 7. The recess 7 can extend at least partially along the circumference of the body of the device 1. In an alternative version, the grooves 7 are intermittently grooved (not shown) circumferentially.
圖2例示另一替代型式,其中裝置1之下部4或緊固佈置在其外部圓周上具備陽螺紋部分6,亦即,螺紋。螺紋部分可為筆直的或錐形的(未展示)。因此,螺紋部分包含多個凹槽7。Figure 2 illustrates another alternative in which the lower portion 4 of the device 1 or the fastening arrangement is provided with a male threaded portion 6, i.e., a thread, on its outer circumference. The threaded portion can be straight or tapered (not shown). Therefore, the threaded portion contains a plurality of grooves 7.
螺紋部分6可自底側2且朝向頂側3向上延伸,亦即,沿縱向方向L延伸,終止於自頂側3之距離D處。因此,靶之上部5可由此距離D界定。The threaded portion 6 can extend upwardly from the bottom side 2 and towards the top side 3, that is to say in the longitudinal direction L, ending at a distance D from the top side 3. Thus, the target upper portion 5 can be defined by this distance D.
因此,裝置之上部5為在PVD方法期間至少部分地耗損之部分。Thus, the upper portion 5 of the device is the portion that is at least partially depleted during the PVD process.
裝置或裝置之緊固佈置可適於連接至對應固持器部分。固持器部分可提供於PVD器材(亦未展示)中。The fastening arrangement of the device or device may be adapted to be coupled to a corresponding holder portion. The holder portion can be provided in a PVD device (also not shown).
固持器部分可為任何類型之偏壓裝置,亦即,抵靠靶裝置之緊固佈置而按壓以將其在PVD器材中固持就位之裝置。The holder portion can be any type of biasing device, i.e., a device that is pressed against the fastening arrangement of the target device to hold it in place in the PVD fixture.
靶裝置之緊固佈置及固持器部分或佈置必須經構造以使得靶裝置在濺射或PVD方法期間牢牢固持就位,但仍在後來容易地移除,以確保該方法之適當效率。The fastening arrangement of the target device and the holder portion or arrangement must be configured such that the target device is firmly held in place during the sputtering or PVD process, but is still easily removed later to ensure proper efficiency of the method.
在一個替代型式中,固持器部分可包含至少一個爪形離合器或爪形離合器佈置12,如圖1所示。爪形離合器12可適於在裝置之圓周中配對連接至至少一個凹槽7或至少一個狹槽,亦即,朝向靶裝置之緊固佈置偏置。固持器部分可進一步包含環13,以抵靠裝置及凹槽按壓或偏置爪形離合器12。環13可經佈置以包圍爪形離合器佈置。In an alternative version, the retainer portion can include at least one dog clutch or dog clutch arrangement 12, as shown in FIG. The dog clutch 12 can be adapted to be mated to at least one groove 7 or at least one slot in the circumference of the device, i.e., biased toward the fastening arrangement of the target device. The holder portion may further include a ring 13 to press or bias the dog clutch 12 against the device and the recess. The ring 13 can be arranged to surround the dog clutch arrangement.
螺紋部分6可適於連接,亦即,緊固或螺紋連接,於具有內螺紋部分或陰螺紋部分之對應固持器部分中(未展示)。The threaded portion 6 can be adapted for attachment, i.e., fastening or threading, in a corresponding retainer portion (not shown) having an internally threaded portion or a female threaded portion.
凹槽7之截面形狀在圖1中例示為反轉V形或楔形/鍵槽。然而,凹槽7可具有任何適合形狀,諸如通道或有細管形狀,或圓形或甚至為鋸齒狀,亦即,包含方形或矩形齒部。The cross-sectional shape of the groove 7 is exemplified in Fig. 1 as an inverted V shape or a wedge/key groove. However, the recess 7 can have any suitable shape, such as a channel or a thin tube shape, or a circular or even zigzag, that is, including square or rectangular teeth.
因此,諸如像爪形離合器之對應固持器部分之形狀適於配對連接至凹槽7或陽螺紋部分6。Thus, the shape of the corresponding retainer portion, such as, for example, a dog clutch, is adapted to be mated to the groove 7 or the male threaded portion 6.
螺紋部分或螺紋6之截面形狀,亦即,其螺紋形式,可為方形、三角形、梯形或其他形狀中之任一者。螺紋形式一詞可亦指代合在一起的所有設計態樣,亦即,截面形狀、節距及直徑。The cross-sectional shape of the threaded portion or thread 6, that is, its thread form, may be square, triangular, trapezoidal or other shape. The term thread form may also refer to all design aspects that are combined, that is, the cross-sectional shape, pitch, and diameter.
根據一個實施例,截面形狀之角度特徵,亦即,螺紋角,可為用於V形螺紋之標準化60度,但可使用任何適合的螺紋角。According to one embodiment, the angular feature of the cross-sectional shape, i.e., the thread angle, may be 60 degrees normalized for a V-shaped thread, although any suitable thread angle may be used.
螺紋形式可為單頭或雙頭螺紋形式中之任一者。The thread form can be any of a single or double threaded form.
螺紋部分6可包含粗螺紋,亦即,具有較大節距,亦即,自一個螺紋之頂峰至下一螺紋頂峰具有較大距離,或在每軸向距離上就有較少螺紋數(與所謂細螺紋相比)。粗螺紋可具有相對於螺釘直徑之較大螺紋形式。因此,粗螺紋非暗含品質低於細螺紋,而僅僅指代相對於螺釘直徑之螺紋大小The threaded portion 6 can comprise a coarse thread, that is, a larger pitch, that is, a larger distance from the peak of one thread to the peak of the next thread, or a smaller number of threads per axial distance (and The so-called fine thread is compared). The coarse thread can have a larger thread form relative to the diameter of the screw. Therefore, the coarse thread has a non-implicit quality lower than the fine thread and only refers to the thread size relative to the screw diameter.
螺紋可被平截,亦即,產生可表示為節距值之一小部分的最終螺紋深度。根據一個實施例,螺紋可經平截以產生.65p值(根據UTS或ISO螺紋之標準化螺紋具有約.65p之高度)之60%至75%的螺紋深度。The thread can be truncated, that is, produce a final thread depth that can be expressed as a fraction of the pitch value. According to one embodiment, the threads may be truncated to produce a thread depth of .65p (60% to 75% of the height of the normal thread of UTS or ISO thread having a height of about .65p).
裝置可為所謂基於靶的金屬。用於濺射方法之金屬靶或裝置可包含純金屬或合金或不同金屬之混合物。The device can be a so-called target-based metal. The metal target or device used in the sputtering process may comprise a pure metal or alloy or a mixture of different metals.
裝置可為基於化合物的靶或裝置。基於化合物的靶可包含氧化物、氮化物、硼化物、硫化物、硒化物、碲化物、碳化物及結晶及複雜混合物中之任一者。The device can be a compound based target or device. The compound-based target can comprise any of oxides, nitrides, borides, sulfides, selenides, tellurides, carbides, and crystalline and complex mixtures.
如圖3所示,靶1之頂側3可向內成錐度,以使得提供圓周脊部9及下沉或降低的上部表面8。As shown in Figure 3, the top side 3 of the target 1 can taper inwardly such that a circumferential ridge 9 and a lowered or lowered upper surface 8 are provided.
圖4A及4B示意地例示習知先前技術裝置或靶(圖4A)及根據本發明之裝置(圖4B)之利用程度的差別。如線U’所例示,與其中用線U描繪對靶之利用的具有內螺紋部分10之裝置相比,藉由提供外部凹槽7或螺紋部分6可在PVD方法中使用,亦即,耗損,裝置之更大部分。對此進一步地,可在靶或陰極之生產中使用更少材料,因為螺紋部分6佈置在裝置外側上,從而允許比內螺紋部分10更高之利用。根據一個實例,與藉由習知靶設計之僅20%相比,藉由根據本發明之靶的由線U、U’所示之利用程度可為約40%。Figures 4A and 4B schematically illustrate the differences in the extent of utilization of prior art devices or targets (Figure 4A) and devices in accordance with the present invention (Figure 4B). As exemplified by the line U', the external groove 7 or the threaded portion 6 can be used in the PVD method, i.e., depleted, as compared to a device having the internally threaded portion 10 in which the use of the target is depicted by the line U. , a larger part of the device. Further to this, less material can be used in the production of the target or cathode because the threaded portion 6 is disposed on the outside of the device, allowing for a higher utilization than the internally threaded portion 10. According to one example, the degree of utilization indicated by lines U, U' by the target according to the invention may be about 40% compared to only 20% by conventional target design.
1‧‧‧裝置
2‧‧‧底側
3‧‧‧頂側
4‧‧‧下部
5‧‧‧上部
6‧‧‧螺紋部分/螺紋
7‧‧‧凹槽
8‧‧‧上部表面
9‧‧‧脊部
10‧‧‧螺紋部分
12‧‧‧爪形離合器佈置/爪形離合器
13‧‧‧環
D‧‧‧距離
L‧‧‧縱向方向
U、U’‧‧‧線1‧‧‧ device
2‧‧‧ bottom side
3‧‧‧ top side
4‧‧‧ lower
5‧‧‧ upper
6‧‧‧Threaded part/thread
7‧‧‧ Groove
8‧‧‧ upper surface
9‧‧‧ ridge
10‧‧‧Threaded part
12‧‧‧Claw clutch arrangement / claw clutch
13‧‧‧ Ring
D‧‧‧Distance
L‧‧‧ longitudinal direction
U, U'‧‧‧ line
本解決方案之實施例現將參考隨附示意性圖式以實例方式來描述。 圖1為用於物理氣相沉積方法之裝置的示意性側視圖。 圖2為用於物理氣相沉積方法之裝置的示意性底視圖。 圖3為用於物理氣相沉積方法之裝置的示意性頂視圖。 圖4A及4B分別為用於物理氣相沉積方法之先前技術裝置及根據本發明概念之用於物理氣相沉積方法的裝置之示意性截面視圖。Embodiments of the present solution will now be described by way of example with reference to the accompanying schematic drawings. 1 is a schematic side view of an apparatus for a physical vapor deposition method. 2 is a schematic bottom view of an apparatus for a physical vapor deposition method. Figure 3 is a schematic top view of an apparatus for a physical vapor deposition process. 4A and 4B are schematic cross-sectional views of a prior art device for a physical vapor deposition method and a device for a physical vapor deposition method according to the inventive concept, respectively.
1‧‧‧裝置 1‧‧‧ device
2‧‧‧底側 2‧‧‧ bottom side
3‧‧‧頂側 3‧‧‧ top side
4‧‧‧下部 4‧‧‧ lower
5‧‧‧上部 5‧‧‧ upper
7‧‧‧凹槽 7‧‧‧ Groove
8‧‧‧上部表面 8‧‧‧ upper surface
12‧‧‧爪形離合器佈置/爪形離合器 12‧‧‧Claw clutch arrangement / claw clutch
13‧‧‧環 13‧‧‧ Ring
Claims (12)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE1650144A SE1650144A1 (en) | 2016-02-05 | 2016-02-05 | Device for a physical vapor deposition (pvd) process |
Publications (1)
Publication Number | Publication Date |
---|---|
TW201728772A true TW201728772A (en) | 2017-08-16 |
Family
ID=57965934
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW106103661A TW201728772A (en) | 2016-02-05 | 2017-02-03 | Device for a physical vapor deposition(PVD)process |
Country Status (3)
Country | Link |
---|---|
SE (1) | SE1650144A1 (en) |
TW (1) | TW201728772A (en) |
WO (1) | WO2017134161A1 (en) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5032246A (en) * | 1990-05-17 | 1991-07-16 | Tosoh Smd, Inc. | Sputtering target wrench and sputtering target design |
US6551470B1 (en) | 1999-06-15 | 2003-04-22 | Academy Precision Materials | Clamp and target assembly |
US20040126492A1 (en) * | 2002-12-30 | 2004-07-01 | Weaver Scott Andrew | Method and apparatus for using ion plasma deposition to produce coating |
US20060278519A1 (en) * | 2005-06-10 | 2006-12-14 | Leszek Malaszewski | Adaptable fixation for cylindrical magnetrons |
PL2243149T3 (en) * | 2008-02-15 | 2012-02-29 | Bekaert Advanced Coatings Nv | Multiple grooved vacuum coupling |
AT13830U1 (en) * | 2013-04-22 | 2014-09-15 | Plansee Se | Arc evaporation coating source |
-
2016
- 2016-02-05 SE SE1650144A patent/SE1650144A1/en not_active Application Discontinuation
-
2017
- 2017-02-02 WO PCT/EP2017/052246 patent/WO2017134161A1/en active Application Filing
- 2017-02-03 TW TW106103661A patent/TW201728772A/en unknown
Also Published As
Publication number | Publication date |
---|---|
WO2017134161A1 (en) | 2017-08-10 |
SE1650144A1 (en) | 2017-08-06 |
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