TW201726875A - An adhesive suitable for a pellicle for euv lithography and a pellicle using the same adhesive - Google Patents
An adhesive suitable for a pellicle for euv lithography and a pellicle using the same adhesive Download PDFInfo
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- TW201726875A TW201726875A TW105134206A TW105134206A TW201726875A TW 201726875 A TW201726875 A TW 201726875A TW 105134206 A TW105134206 A TW 105134206A TW 105134206 A TW105134206 A TW 105134206A TW 201726875 A TW201726875 A TW 201726875A
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- adhesive
- pellicle
- hardness
- euv lithography
- film
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- 239000000853 adhesive Substances 0.000 title claims abstract description 110
- 230000001070 adhesive effect Effects 0.000 title claims abstract description 108
- 238000001900 extreme ultraviolet lithography Methods 0.000 title claims description 31
- 238000000034 method Methods 0.000 claims description 13
- 238000012360 testing method Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000004593 Epoxy Substances 0.000 claims description 8
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- 229910052797 bismuth Inorganic materials 0.000 claims description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 4
- 239000012790 adhesive layer Substances 0.000 abstract description 3
- 239000007788 liquid Substances 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 10
- 238000007687 exposure technique Methods 0.000 description 6
- 238000013007 heat curing Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 239000000428 dust Substances 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000001723 curing Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- -1 polyethylene Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 229920003319 Araldite® Polymers 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- HIXDQWDOVZUNNA-UHFFFAOYSA-N 2-(3,4-dimethoxyphenyl)-5-hydroxy-7-methoxychromen-4-one Chemical compound C=1C(OC)=CC(O)=C(C(C=2)=O)C=1OC=2C1=CC=C(OC)C(OC)=C1 HIXDQWDOVZUNNA-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- ZAFNJMIOTHYJRJ-UHFFFAOYSA-N Diisopropyl ether Chemical compound CC(C)OC(C)C ZAFNJMIOTHYJRJ-UHFFFAOYSA-N 0.000 description 1
- NHTMVDHEPJAVLT-UHFFFAOYSA-N Isooctane Chemical compound CC(C)CC(C)(C)C NHTMVDHEPJAVLT-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229920002301 cellulose acetate Polymers 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- JVSWJIKNEAIKJW-UHFFFAOYSA-N dimethyl-hexane Natural products CCCCCC(C)C JVSWJIKNEAIKJW-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- JBTWLSYIZRCDFO-UHFFFAOYSA-N ethyl methyl carbonate Chemical compound CCOC(=O)OC JBTWLSYIZRCDFO-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000006210 lotion Substances 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920001083 polybutene Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000004848 polyfunctional curative Substances 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000001012 protector Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Paints Or Removers (AREA)
Abstract
Description
本發明涉及，在EUV微影用防塵薄膜組件中適宜的接著劑和使用其的防塵薄膜組件，更具體的涉及，例如，在使用以13.5 nm為主波長的EUV（Extreme Ultra-Violet）光進行微影時使用的防塵薄膜組件中適宜的接著劑和使用其的防塵薄膜組件。The present invention relates to a suitable adhesive agent and a pellicle film assembly using the same in a dust-proof film assembly for EUV lithography, and more particularly, for example, using EUV (Extreme Ultra-Violet) light having a main wavelength of 13.5 nm. A suitable adhesive for a pellicle for use in lithography and a pellicle assembly using the same.
在大型積體電路（Large Scale Integration，LSI）、超大型積體電路（Very Large Scale Integration，VLSI）等的半導體製造或液晶面板等的製造中，要將半導體晶圓或液晶用原板中用光照射，進行圖案的製作，此時，如果使用的光遮罩或中間遮罩（以下，統稱「光遮罩」）上有灰塵附著，該灰塵會對照射光進行遮擋、反射，由此轉印的圖案的邊緣不齊，還會使基底變黑等，從而對尺寸、品質、外觀等有損害。In the manufacture of semiconductors such as large-scale integrated circuits (LSI) and Very Large Scale Integration (VLSI), or in the manufacture of liquid crystal panels, it is necessary to use light in a semiconductor wafer or a liquid crystal original plate. When the light is applied to the pattern, the dust is adhered to the light mask or the intermediate mask (hereinafter, collectively referred to as "light mask"), and the dust is shielded and reflected by the light, thereby being transferred. The edges of the pattern are not uniform, and the substrate is blackened, etc., which is detrimental to size, quality, appearance, and the like.
由此，這樣的作業通常於無塵室中進行，但是即使如此，也難以總是保持光遮罩清潔，所以，要在光遮罩表面貼附作為防塵器使用的防塵薄膜組件後再進行曝光。如此，灰塵等的異物就不直接在光遮罩的表面上附著，而是在防塵薄膜組件上附著，這樣，微影時只要將焦點對準光遮罩的圖案，異物的像就不會在轉印圖案中出現，上述問題就可以避免了。Therefore, such work is usually performed in a clean room, but even in this case, it is difficult to always keep the light mask clean. Therefore, it is necessary to attach the pellicle component used as the dust protector to the surface of the photomask before performing exposure. . In this way, foreign matter such as dust does not directly adhere to the surface of the light mask, but adheres to the dustproof film assembly. Thus, as long as the focus is directed to the pattern of the light mask, the image of the foreign object does not The above problems can be avoided in the transfer pattern.
這樣的防塵薄膜組件，一般是將光良好透過的硝酸纖維素、乙酸纖維素或氟樹脂等構成的透明的防塵薄膜，在由鋁、不銹鋼、聚乙烯等構成的防塵薄膜組件框架的上端面上塗布防塵薄膜的良溶媒後，風乾並接著（專利文獻1參照），或用丙烯酸樹脂和環氧樹脂等的接著劑接著（專利文獻2參照）。進而，防塵薄膜組件框架的下端面，具有為了貼附光遮罩的由聚丁烯樹脂，聚乙酸乙烯基樹脂，丙烯酸樹脂，矽樹脂等構成的粘著層以及保護粘著層的離型層（分離膜）。Such a pellicle film is generally a transparent pellicle film made of nitrocellulose, cellulose acetate or fluororesin which transmits light well, on the upper end surface of a pellicle frame made of aluminum, stainless steel, polyethylene or the like. After the good solvent of the pellicle film is applied, it is air-dried and then (refer to Patent Document 1) or an adhesive such as an acrylic resin or an epoxy resin (see Patent Document 2). Further, the lower end surface of the pellicle frame has an adhesive layer made of polybutene resin, polyvinyl acetate resin, acrylic resin, enamel resin or the like for attaching the light mask, and a release layer for protecting the adhesive layer. (separation membrane).
但是，近年來，半導體裝置以及液晶面板，越來越高集成化、細微化。現在，32 nm左右的細微圖案在光抗蝕膜上形成的技術也變得實用化。32 nm左右的圖案的情況，可以用，在半導體晶圓或液晶用原版和投影透鏡之間充滿超純水等的液體，使用ArF準分子雷射，在光抗蝕膜上進行曝光的液浸曝光技術和多重曝光等的以往的使用準分子雷射的改良技術來進行對應。However, in recent years, semiconductor devices and liquid crystal panels have become more and more integrated and miniaturized. Now, the technique of forming a fine pattern of about 32 nm on a photoresist film has also become practical. In the case of a pattern of about 32 nm, it is possible to fill a liquid such as ultrapure water between a semiconductor wafer or a liquid crystal original plate and a projection lens, and use an ArF excimer laser to perform liquid immersion exposure on the photoresist film. Conventional exposure techniques such as exposure techniques and multiple exposures have been performed using improved techniques using excimer lasers.
但是，在下一代的半導體裝置和液晶面板上要求形成進一步細微化的10nm以下的圖案，但是這樣細微化的10nm以下的圖案的形成，用以往的使用準分子雷射的曝光改良技術，就不行了。However, in the next-generation semiconductor device and liquid crystal panel, it is required to form a pattern having a thickness of 10 nm or less which is further fined. However, the formation of such a finely patterned pattern of 10 nm or less is not possible by the conventional exposure improving technique using a pseudo-molecular laser. It is.
因此，作為10nm以下的圖案形成的方法，就變得必須使用以13.5 nm為主波長的EUV光的EUV曝光技術了。使用這樣的EUV曝光技術，在光抗蝕膜上製作10nm以下的細微的圖案的情況，使用什麼樣的光源，使用什麼樣的光抗蝕劑，使用什麼樣的防塵薄膜組件等的技術的課題的解決就變得必須了，對於這樣的技術課題，新的光源和新的光抗蝕劑材料，開發有了進展，各種的方案被提出。Therefore, as a method of forming a pattern of 10 nm or less, it becomes necessary to use an EUV exposure technique of EUV light having a main wavelength of 13.5 nm. By using such an EUV exposure technique, when a fine pattern of 10 nm or less is formed on a photoresist film, what kind of light source is used, what kind of photoresist is used, and what kind of technology is used. The solution has become necessary. For such technical issues, new light sources and new photoresist materials have been developed, and various proposals have been made.
其中，關於左右半導體裝置或液晶面板的產率的防塵薄膜組件，例如，專利文獻3中，記載了作為EUV微影用防塵薄膜組件中使用的防塵薄膜，透明並且不產生光學變形的厚度0.1 µm～2.0 µm的矽製薄膜，但是在實用化的點上有未解決的問題，這樣的問題成為EUV曝光技術實用化的大的障礙。 [現有技術文獻] [專利文獻]In the pellicle film assembly, the pellicle film used in the PSA film assembly for EUV lithography, which is transparent and does not cause optical distortion, has a thickness of 0.1 μm.矽2.0 μm tantalum film, but there are unsolved problems in practical use, such a problem becomes a major obstacle to the practical use of EUV exposure technology. [Prior Art Document] [Patent Literature]
[專利文獻1]日本專利特開昭58-219023號公報 [專利文獻2]日本專利特公昭63-27707號公報 [專利文獻3]美國專利第6623893號說明書[Patent Document 1] Japanese Patent Laid-Open Publication No. SHO-58-237023 [Patent Document 2] Japanese Patent Publication No. Sho 63-27707 [Patent Document 3] US Patent No. 6623893
[發明所欲解決之課題] 通常，關於將防塵薄膜在防塵薄膜組件框架上貼附所使用的接著劑的材料，為從以往的使用i線（波長365nm）的曝光、使用KrF準分子雷射光（波長248nm）的曝光以及使用ArF準分子雷射光（波長193nm）的曝光中，考慮接著力來進行選擇。[Problems to be Solved by the Invention] In general, the material used for attaching the pellicle film to the pellicle frame is a conventionally used i-line (wavelength 365 nm) exposure using KrF excimer laser light. In the exposure (wavelength: 248 nm) and the exposure using ArF excimer laser light (wavelength: 193 nm), the selection is made in consideration of the adhesion force.
但是，在所定的使用EUV微影技術於光抗蝕膜上形成10nm以下的細微的圖案的環境中進行實驗時，以往使用的接著劑，產生了時常發生防塵薄膜從防塵薄膜組件框架剝離的問題。However, when an experiment is carried out in an environment where a fine pattern of 10 nm or less is formed on a photoresist film by using the EUV lithography technique, the conventionally used adhesive has a problem that the pellicle film is often peeled off from the pellicle frame. .
因此，本發明人，為了解決上述問題，在電腦上進行反復模擬的結果，得知在矽製防塵薄膜中EUV光照射的部分，有被EUV光加熱到500℃附近的可能，防塵薄膜和防塵薄膜組件框架接合的接著劑，根據計算，得知有可能達到200℃～300℃。由此，上述的實驗中的防塵薄膜剝離的主原因，也可以是由於該高溫引起的。即，接著劑，在高溫中硬度會發生變化，硬度上升的情況下變得脆弱，就難於防止防塵薄膜的剝離，另一方面，高溫使硬度變低的情況下變為流體狀，從而不能固定防塵薄膜，不能防止防塵薄膜的剝離。因此，在EUV微影用防塵薄膜組件中，如接著劑的對於熱的安定性變低，於受熱的情況下，接著劑過度硬化、過度軟化，從而接著性就不能保持了。Therefore, in order to solve the above problems, the present inventors have carried out repeated simulations on a computer, and have found that the portion irradiated with EUV light in the pell film can be heated to near 500 ° C by EUV light, and the dustproof film and dustproof. The adhesive for bonding the film module frame was found to be possible to reach 200 ° C to 300 ° C according to calculation. Therefore, the main cause of peeling of the pellicle film in the above experiment may be due to the high temperature. In other words, the adhesive changes in hardness at a high temperature, and becomes weak when the hardness is increased, so that it is difficult to prevent peeling of the pellicle film. On the other hand, when the hardness is lowered at a high temperature, the fluid becomes fluid and cannot be fixed. The dust-proof film does not prevent the peeling of the dust-proof film. Therefore, in the dust-proof film assembly for EUV lithography, if the heat stability of the adhesive is lowered, the adhesive is excessively hardened and excessively softened in the case of heat, so that the adhesiveness cannot be maintained.
因此，本發明就是鑒於上述的情況而產生，其課題為，提供一種EUV微影中產生的高溫域的耐熱性（對溫度安定性）優良的適宜於EUV微影用防塵薄膜組件的接著劑和使用其的防塵薄膜組件、該防塵薄膜組件的製造方法以及適宜於EUV微影的防塵薄膜組件的接著劑的選擇方法。 [解決課題的手段]Therefore, the present invention has been made in view of the above circumstances, and an object of the present invention is to provide an adhesive suitable for an EUV lithography pellicle assembly which is excellent in heat resistance (temperature stability) in a high temperature region generated in EUV lithography. A pellicle film assembly using the same, a method of manufacturing the pellicle film assembly, and a method of selecting an adhesive for a pellicle film assembly suitable for EUV lithography. [Means for solving the problem]
本發明人，對上述課題的解決進行了深入的研究，在多個種類的接著劑中，找出了在300℃的環境中連續靜置7天時的硬度的變化率在±50%的範圍內的接著劑適宜於EUV曝光技術，從而完成了本發明。The present inventors have intensively studied the above-mentioned problems, and found that the rate of change in hardness at a time of continuously standing for 7 days in an environment of 300 ° C is within ±50% in various types of adhesives. The adhesive inside is suitable for the EUV exposure technique, thereby completing the present invention.
即，本發明的接著劑為，為了將防塵薄膜貼附於防塵薄膜組件框架上，適宜於EUV微影用防塵薄膜組件的接著劑，其特徵在於，該接著劑的硬化物在300℃的環境中連續靜置7天的由下述式表示的硬度的變化率為±50%的範圍內。 式： 硬度的變化率（%）＝｛（所述靜置後的硬度）-（所述靜置前的硬度）｝÷（所述靜置前的硬度）×100That is, the adhesive of the present invention is an adhesive suitable for the EUV lithographic pellicle assembly in order to attach the pellicle to the pellicle frame, characterized in that the cured product of the adhesive is in an environment of 300 ° C. The rate of change in hardness represented by the following formula which was continuously allowed to stand for 7 days was in the range of ±50%. Formula: Rate of change in hardness (%) = {(hardness after standing) - (hardness before standing)} ÷ (hardness before standing) × 100
進而，本發明為，具有防塵薄膜、防塵薄膜組件框架以及將它們相互接著的接著劑的EUV微影用防塵薄膜組件，其特徵為，作為所述接著劑，使用本發明的接著劑。Further, the present invention provides a dust-proof film assembly for an EUV lithography having a dust-proof film, a pellicle frame, and an adhesive for adhering them to each other, wherein the adhesive of the present invention is used as the adhesive.
進而，本發明的防塵薄膜組件的製造方法為，具有防塵薄膜、防塵薄膜組件框架以及將它們相互接著的接著劑的EUV微影用防塵薄膜組件的製造方法，其特徵在於，具有將本發明的接著劑塗布於防塵薄膜組件框架上的步驟。Further, the method for producing a pellicle according to the present invention is a method for producing a pellicle for EUV lithography having a pellicle film, a pellicle frame, and an adhesive which adheres to each other, and has a method of manufacturing the pellicle for EUV lithography of the present invention. The step of applying the agent to the pellicle frame.
進而，本發明的接著劑的選擇方法為，為了將EUV微影用防塵薄膜組件的防塵薄膜接著於防塵薄膜組件框架中，適宜於EUV微影用防塵薄膜組件中的接著劑的選擇方法，其特徵在於，將被測試的接著劑的硬化物在300℃的環境中連續靜置7天時的由下述式表達的硬度的變化率滿足±50%的範圍內的條件的接著劑選擇作為適宜於EUV微影用防塵薄膜組件中的接著劑。 式： 硬度的變化率（%）＝｛（所述靜置後的硬度）-（所述靜置前的硬度）｝÷（所述靜置前的硬度）×100 [發明的效果]Further, the method for selecting an adhesive of the present invention is a method for selecting an adhesive for use in a dustproof film assembly for EUV lithography in order to attach a dustproof film for a PPV film for EUV lithography to a pellicle frame. The adhesive is selected as a suitable condition in which the cured product of the adhesive to be tested is continuously allowed to stand in an environment of 300 ° C for 7 days, and the rate of change of the hardness expressed by the following formula satisfies the condition within the range of ± 50%. An adhesive in a pellicle for EUV lithography. Formula: Rate of change in hardness (%) = {(hardness after standing) - (hardness before standing)} ÷ (hardness before standing) × 100 [Effect of the invention]
本發明的接著劑，由於具有在EUV曝光技術中的高溫區域中的安定性，所以在EUV微影中，防塵薄膜和防塵薄膜組件框架之間的接著性可以被維持。因此，通過將防塵薄膜和防塵薄膜組件框架用本發明的接著劑接合的防塵薄膜組件，就可以使用EUV光在抗蝕劑膜中，形成10nm以下的細微圖案。The adhesive of the present invention, since it has the stability in a high temperature region in the EUV exposure technique, the adhesion between the pell film and the pellicle frame can be maintained in the EUV lithography. Therefore, by using the pellicle film in which the pellicle film and the pellicle frame are joined by the adhesive of the present invention, it is possible to form a fine pattern of 10 nm or less in the resist film using EUV light.
以下，參照附圖對本發明的實施方式進行詳細說明，但是本發明並不限於此。Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings, but the present invention is not limited thereto.
圖1為，使用本發明的接著劑13的本發明的防塵薄膜組件1的一實施方式的縱截面圖。該防塵薄膜組件1，具有防塵薄膜11、防塵薄膜組件框架12以及將它們相互接著的接著劑13的EUV微影用防塵薄膜組件。在該防塵薄膜組件1中，在與貼附防塵薄膜組件1的基板（光遮罩或該玻璃基板部分，未圖示）的形狀相對應的通常為四角框狀（長方形框狀或正方形框狀）的防塵薄膜組件框架12的上端面，通過接著劑13將防塵薄膜11繃緊設置。Fig. 1 is a longitudinal cross-sectional view showing an embodiment of a pellicle according to the present invention using the adhesive 13 of the present invention. The pellicle film assembly 1 includes a pellicle film 11, a pellicle frame 12, and an EUV lithography pellicle assembly for adhering the adhesive 13 to each other. In the pellicle film assembly 1, the shape of the substrate (the light mask or the glass substrate portion, not shown) to which the pellicle film 1 is attached is generally a rectangular frame shape (a rectangular frame shape or a square frame shape). The upper end surface of the pellicle frame 12 is stretched by the adhesive 13 by the adhesive 13.
該防塵薄膜11以及防塵薄膜組件框架12的材質沒有特別的限制，可以使用公知物。 形成防塵薄膜11的材質為，單晶矽、多晶矽、非晶矽等，但是，以高度透過EUV光之物為優選。進而，為了對防塵薄膜11進行保護，也可以具有由SiC，SiO2 ，Si3 N4 ，SiON，Y2 O3 ，YN，Mo，Ru，Rh等構成的保護膜。The material of the pellicle film 11 and the pellicle frame 12 is not particularly limited, and a known one can be used. The material for forming the pellicle film 11 is a single crystal germanium, a polycrystalline germanium, an amorphous germanium or the like, but it is preferable to transmit the EUV light at a high level. Further, in order to protect the pellicle film 11, a protective film made of SiC, SiO 2 , Si 3 N 4 , SiON, Y 2 O 3 , YN, Mo, Ru, Rh or the like may be provided.
防塵薄膜組件框架12的材質，線性膨脹係數小的玻璃製和金屬製為優選，但是，從放熱性、加工性、強度的點來看，以金屬製為更優選。The material of the pellicle frame 12 is preferably made of glass or metal having a small linear expansion coefficient. However, from the viewpoint of heat dissipation, workability, and strength, it is more preferably made of metal.
本發明的接著劑13為，在防塵薄膜組件框架12的上端面全周塗布，其目的是為了將防塵薄膜11在防塵薄膜組件框架12上貼附。本發明的接著劑13，採用該接著劑的硬化物在300℃的環境中連續靜置7天時的由下述式表示的硬度的變化率為±50%的範圍內之物。這樣的接著劑由於在EUV微影中的耐熱性（溫度安定性）高，是特別適宜在EUV微影用防塵薄膜組件的接著劑。進而，在本說明書中以及申請專利範圍中，所謂接著劑等的硬化物的「硬度」，是按JIS K 6249：2003，特別是使用杜羅回跳硬度計A型的裝置進行的硬度試驗中，得到的硬度值。 式： 硬度的變化率（%）＝｛（所述靜置後的硬度）-（所述靜置前的硬度）｝÷（所述靜置前的硬度）×100The adhesive 13 of the present invention is applied over the entire circumference of the upper end surface of the pellicle frame 12 for the purpose of attaching the pellicle film 11 to the pellicle frame 12. In the adhesive agent 13 of the present invention, when the cured product of the adhesive is continuously allowed to stand in an environment of 300 ° C for 7 days, the rate of change in hardness represented by the following formula is within ±50%. Such an adhesive is particularly suitable as an adhesive for a PPV film for EUV lithography because of its high heat resistance (temperature stability) in EUV lithography. Further, in the present specification and the patent application, the "hardness" of the cured product such as the adhesive is in the hardness test according to JIS K 6249:2003, particularly using a device of the Douro Rebound Durometer Type A. , the hardness value obtained. Formula: Rate of change in hardness (%) = {(hardness after standing) - (hardness before standing)} ÷ (hardness before standing) × 100
為了得到本發明的接著劑13，例如，可以首先購買市售的接著劑，只要滿足將該接著劑的硬化物在300℃的環境中連續靜置7天時的由所述式表示的硬度的變化率為±50%的範圍內的條件，進行選擇即可。由此，不需要複雜的製造步驟，就可以簡便的得到適宜於EUV微影用防塵薄膜組件的接著劑。In order to obtain the adhesive 13 of the present invention, for example, a commercially available adhesive may be first purchased as long as the hardness of the cured product of the adhesive is continuously left standing for 7 days in an environment of 300 ° C for 7 days. The rate of change within a range of ±50% may be selected. Thereby, an adhesive suitable for the pellicle for EUV lithography can be easily obtained without requiring complicated manufacturing steps.
作為滿足這樣的條件的接著劑13的具體例，為市售的矽系接著劑KE-1803和KE-1854（皆為信越化學工業股份有限公司製：製品名），環氧系接著劑EK2000（Epoxy Technology, Inc.製，製品名）等。它們在300℃以下耐熱性高，適宜於使用。KE-1803，根據產品說明為三液室溫硬化型，可縮短加熱到硬化的時間。KE-1854為一液加熱硬化型，EK2000為二液加熱硬化型。Specific examples of the adhesive 13 satisfying such conditions are commercially available bismuth-based adhesives KE-1803 and KE-1854 (all manufactured by Shin-Etsu Chemical Co., Ltd.: product name), epoxy-based adhesive EK2000 ( Epoxy Technology, Inc., product name), etc. They have high heat resistance below 300 ° C and are suitable for use. KE-1803, according to the product description, is a three-liquid room temperature curing type, which can shorten the heating to hardening time. KE-1854 is a liquid heat curing type, and EK2000 is a two-liquid heat curing type.
本發明的接著劑13，對其硬化方式沒有限制，一液室溫硬化型，一液加熱硬化型，二液室溫硬化型，二液加熱硬化型，三液室溫硬化型或紫外線硬化型等，任一硬化方式都可。The adhesive 13 of the present invention has no limitation on the curing method thereof, one liquid room hardening type, one liquid heat curing type, two liquid room temperature hardening type, two liquid heat curing type, three liquid room temperature hardening type or ultraviolet curing type. Etc. Any hardening method is fine.
本發明的接著劑13，特別是在EUV微影用防塵薄膜組件中，適宜於將防塵薄膜接著於防塵薄膜組件框架上。如上所述，EUV曝光時曝光光的能量會使防塵薄膜有可能部分地處於甚至高達500℃的高溫中，進而用於將防塵薄膜和防塵薄膜組件框架進行接合的接著劑有可能處於高達200℃～300℃的溫度。 因此，本發明的接著劑13，在這樣的高溫域中有必要具有充分的耐熱性，在進行使用本發明的接著劑13的防塵薄膜組件的耐熱試驗（防塵薄膜組件1在250℃環境的烘箱中進行連續靜置7天後，冷卻到室溫），在使用滿足本發明的所述條件的接著劑13的情況下，可以確認處於250℃的高溫的防塵薄膜11的繃緊的狀態被良好地保持（參照後述的實施例）。這被認為是由於本發明的接著劑13在處於250℃的高溫中也能保持充分的接著力的結果，這表明本發明的接著劑13不僅在200℃，即使高達300℃的高溫區域中也具有耐熱性。The adhesive 13 of the present invention, particularly in the EUV lithography pellicle assembly, is suitable for attaching the pellicle film to the pellicle frame. As described above, the energy of the exposure light during EUV exposure may cause the pellicle film to be partially at a high temperature of even up to 500 ° C, and the adhesive for bonding the pell film and the pellicle frame may be as high as 200 ° C. Temperature of ~300 °C. Therefore, the adhesive 13 of the present invention is required to have sufficient heat resistance in such a high temperature region, and the heat resistance test of the pellicle assembly using the adhesive 13 of the present invention (the dustproof film assembly 1 in an oven at 250 ° C environment) In the case where the adhesive 13 which satisfies the conditions of the present invention is used, it is confirmed that the state of the puncture film 11 at a high temperature of 250 ° C is good. Keep it in place (refer to the embodiment described later). This is considered to be a result of the fact that the adhesive 13 of the present invention can maintain a sufficient adhesion force at a high temperature of 250 ° C, which indicates that the adhesive 13 of the present invention is not only at 200 ° C, but also in a high temperature region of up to 300 ° C. Has heat resistance.
這樣的具有高的耐熱性的接著劑13在塗布於防塵薄膜組件框架12的情況下，例如，可用圖2中所示接著劑塗布裝置來進行。圖2為，在接著劑3的塗布中，適宜的接著劑塗布裝置的一例的示意圖。該接著劑塗布裝置2為，通過可以在XYZ軸方向中移動的固定軌道以及可動軌道組合在一起而構成的3軸機器人22，將注射筒23安裝在架台21上方。該注射筒23的先端具有針25，裝滿接著劑13的注射筒23與空氣加壓式分佈器（未圖示）接續，通過3軸機器人22的控制部（未圖示），對機器人動作和塗布液吐出的兩方進行控制。Such an adhesive 13 having high heat resistance is applied to the pellicle frame 12, for example, by the adhesive applicator shown in FIG. 2. FIG. 2 is a schematic view showing an example of a suitable adhesive application device in the application of the adhesive 3. In the adhesive applicator 2, the syringe 23 is mounted above the gantry 21 by a three-axis robot 22 that is formed by combining a fixed rail and a movable rail that can move in the XYZ-axis direction. The syringe 23 has a needle 25 at the tip end thereof, and the syringe 23 filled with the adhesive 13 is connected to an air pressure type distributor (not shown), and is operated by a control unit (not shown) of the 3-axis robot 22 to operate the robot. It is controlled by both sides of the coating liquid.
然後，在接著劑塗布裝置2的架台21上安裝的防塵薄膜組件框架24上，針25一邊使接著劑滴下一邊移動，由此，防塵薄膜組件框架24上就塗布了接著劑13。該場合的接著劑13的移送裝置（未圖示），不限於空氣加壓、氮氣加壓等的氣體加壓，注射泵、往復泵、管泵等，只要供給量以及吐出・停止可以控制的各種的移送裝置都可以利用。Then, on the pellicle frame 24 attached to the gantry 21 of the adhesive applicator 2, the needle 25 is moved while dropping the adhesive, whereby the adhesive 13 is applied to the pellicle frame 24. In this case, the transfer device (not shown) of the adhesive 13 is not limited to gas pressurization such as air pressurization or nitrogen gas pressurization, and the injection pump, the reciprocating pump, the tube pump, and the like can be controlled as long as the supply amount and the discharge/stop are controlled. Various transfer devices are available.
進而，在接著劑13的粘度高，塗布裝置2塗布困難的場合，如有必要，可以添加甲苯、二甲苯等的芳香族系化合物，己烷、異辛烷、異構石蠟等的脂肪族系溶劑，甲基乙基酮、甲基異丁基酮等的酮系溶劑，乙酸乙基酯、乙酸丁基酯等的酯系溶劑，二異丙基醚、1,4-二氧雜環已烷等的醚系溶劑，或它們的混合溶劑。 [實施例]Further, when the viscosity of the adhesive 13 is high and the application of the coating device 2 is difficult, if necessary, an aromatic compound such as toluene or xylene may be added, or an aliphatic system such as hexane, isooctane or isoparaffin may be added. a solvent, a ketone solvent such as methyl ethyl ketone or methyl isobutyl ketone, an ester solvent such as ethyl acetate or butyl acetate, diisopropyl ether or 1,4-dioxane. An ether solvent such as an alkane or a mixed solvent thereof. [Examples]
以下，參照實施例以及比較例，對本發明進行具體說明。Hereinafter, the present invention will be specifically described with reference to examples and comparative examples.
[實施例1] 首先，將外尺寸151 mm×118 mm×高度1.5 mm，厚4 mm的超級不變鋼（super invariable steel；鐵、鎳、鈷的合金）製防塵薄膜組件框架24搬入無塵室，用中性洗劑和純水，充分洗淨・乾燥。其後，在圖2中所示的接著劑塗布裝置2的架台21上將該防塵薄膜組件框架24固定。 另一方面，作為高耐熱性的接著劑13，使用矽系的KE-1803（信越化學工業股份有限公司製：製品名）。該KE-1803的硬化方式為三液室溫硬化型，所以根據用量說明，將KE-1803的主劑和硬化劑和觸媒以質量比100／10／10的比例秤量，將其充分攪拌混合而調製。 接著，將調製的接著劑13裝入圖2中所示接著劑塗布裝置2的聚丙烯（PP）製注射筒23中，將該注射筒23接續到空氣加壓式分佈器（岩下工程股份有限公司製，未圖示）上。在接著劑塗布裝置2中，用3軸機器人22的控制部（未圖示）對機器人動作和塗布液吐出的兩方進行控制，自動運轉，在防塵薄膜組件框架24的周方向全周中，接著劑13從針25滴下，進行塗布。 其後，將防塵薄膜11在防塵薄膜組件框架24的接著劑塗布端面側貼附的同時，用刀將外側的不需要的膜切除。進一步使接著劑13在室溫（25℃）24小時靜置硬化，得到防塵薄膜組件1。[Example 1] First, a dust-proof film module frame 24 made of super invariable steel (iron, nickel, cobalt alloy) having an outer dimension of 151 mm × 118 mm × a height of 1.5 mm and a thickness of 4 mm was put into a dust-free manner. The room is thoroughly washed and dried with a neutral lotion and pure water. Thereafter, the pellicle frame 24 is fixed to the gantry 21 of the adhesive applicator 2 shown in FIG. On the other hand, as the adhesive 13 having high heat resistance, lanthanide KE-1803 (manufactured by Shin-Etsu Chemical Co., Ltd.: product name) was used. The hardening method of KE-1803 is three-liquid room-temperature hardening type, so according to the dosage instructions, the main agent of KE-1803 and the hardener and catalyst are weighed in a mass ratio of 100/10/10, and they are thoroughly stirred and mixed. And modulation. Next, the prepared adhesive 13 is placed in a polypropylene (PP) syringe 23 of the adhesive applicator 2 shown in Fig. 2, and the syringe 23 is connected to an air-pressed distributor (Yanxia Engineering Co., Ltd.) Company system, not shown). In the adhesive application device 2, both the robot operation and the discharge of the coating liquid are controlled by the control unit (not shown) of the three-axis robot 22, and the automatic operation is performed in the entire circumference of the pellicle frame 24 in the circumferential direction. The subsequent agent 13 is dropped from the needle 25 and applied. Thereafter, the pellicle film 11 is attached to the adhesive-coated end face side of the pellicle frame 24, and the outer unnecessary film is cut by a knife. Further, the adhesive 13 was allowed to stand still at room temperature (25 ° C) for 24 hours to obtain a pellicle film assembly 1.
[實施例2] 作為接著劑13，使用矽系一液加熱硬化型的KE-1854（信越化學工業股份有限公司製：製品名），除此之外，用與實施例1同樣的方法製作防塵薄膜組件1。[Example 2] A dust-proof method was produced in the same manner as in Example 1 except that KE-1854 (manufactured by Shin-Etsu Chemical Co., Ltd.: product name) was used as the adhesive 13 Film assembly 1.
[實施例3] 作為接著劑13，使用矽系一液加熱硬化型的KE-1880（信越化學工業股份有限公司製：製品名），除此之外，用與實施例同樣的方法製作防塵薄膜組件1。[Example 3] A pellicle film was produced in the same manner as in the Example except that KE-1880 (manufactured by Shin-Etsu Chemical Co., Ltd.: product name) of a bismuth-based one-layer heat-curing type was used as the adhesive 13 Component 1.
[實施例4] 作為接著劑13，使用環氧系二液加熱硬化型的EK2000（Epoxy Technology, Inc.製：製品名），除此之外，用與實施例1同樣的方法製作防塵薄膜組件1。[Example 4] A pellicle film assembly was produced in the same manner as in Example 1 except that an epoxy-based two-liquid heat-curing type EK2000 (product name: Epoxy Technology, Inc.) was used as the adhesive 13 1.
[比較例1] 作為接著劑13，使用環氧系的耐熱性接著的AralditeAV138M-1（Ciba-Geigy製：製品名），除此之外，用與實施例1同樣的方法製作防塵薄膜組件1。[Comparative Example 1] A pellicle film assembly 1 was produced in the same manner as in Example 1 except that an epoxy-based heat-resistant Araldite AV138M-1 (manufactured by Ciba-Geigy: product name) was used as the adhesive 13 . .
[比較例2] 作為接著劑13，使用丙烯酸系的耐熱性接著劑metalrock（Cemedine股份有限公司製：製品名），除此之外，用與實施例1同樣的方法製作防塵薄膜組件1。[Comparative Example 2] A pellicle film assembly 1 was produced in the same manner as in Example 1 except that an acrylic heat-resistant adhesive metalrock (manufactured by Cemedine Co., Ltd.) was used as the adhesive.
[比較例3] 作為接著劑13，使用矽系接著劑KE-3490（信越化學工業股份有限公司製：製品名），除此之外，用與實施例1同樣的方法，製作防塵薄膜組件1。[Comparative Example 3] A pellicle film assembly 1 was produced in the same manner as in Example 1 except that the ruthenium-based adhesive KE-3490 (manufactured by Shin-Etsu Chemical Co., Ltd.: product name) was used as the adhesive 13 .
[比較例4] 作為接著劑13，使用環氧系的耐熱性接著劑Araldite2000（Ciba-Geigy製：製品名），除此之外，用與實施例1同樣的方法製作防塵薄膜組件1。[Comparative Example 4] A pellicle film assembly 1 was produced in the same manner as in Example 1 except that an epoxy-based heat-resistant adhesive Araldite 2000 (manufactured by Ciba-Geigy: product name) was used.
[接著劑的耐熱試驗] 僅將在實施例1～4和比較例1～4使用的各接著劑13硬化得到的硬化物分別在300℃環境的烘箱中進行7天的連續靜置後，冷卻到室溫，進行耐熱性評價。耐熱性評價的指標，使用由下述式表示的硬度的變化率，進行比較。結果如表1所示。 式： 硬度的變化率（%）＝｛（所述靜置後的硬度）-（所述靜置前的硬度）｝÷（所述靜置前的硬度）×100[Heat Resistance Test of Adhesive] Only the cured products obtained by curing each of the adhesives 13 used in Examples 1 to 4 and Comparative Examples 1 to 4 were continuously placed in an oven at 300 ° C for 7 days, and then cooled. The heat resistance was evaluated at room temperature. The index of heat resistance evaluation was compared using the rate of change of the hardness represented by the following formula. The results are shown in Table 1. Formula: Rate of change in hardness (%) = {(hardness after standing) - (hardness before standing)} ÷ (hardness before standing) × 100
[防塵薄膜組件的耐熱試驗] 將實施例1～4和比較例1～4中製作的防塵薄膜組件1在250℃環境的烘箱中進行連續靜置7天後，冷卻至室溫，對防塵薄膜11的繃緊狀態進行確認。結果如表1所示。[Heat Resistance Test of Dust-Proof Film Assembly] The pellicle film assembly 1 produced in Examples 1 to 4 and Comparative Examples 1 to 4 was continuously allowed to stand in an oven at 250 ° C for 7 days, and then cooled to room temperature to apply a pellicle film. The tightening state of 11 is confirmed. The results are shown in Table 1.
[表1]
根據上述表1的結果，實施例1～4中使用的接著劑中，300℃的耐熱試驗後的硬度的變化率分別為+40%，+50%，-30%，+50%被抑制的很低，並且，在使用該接著劑的防塵薄膜組件的耐熱試驗中，防塵薄膜的繃緊的狀態良好，實施例1～4中使用的接著劑，在高溫中的接著力沒有變差，可以確認具有高的耐熱性。 另一方面，比較例1～3中使用的接著劑，300℃的耐熱試驗後的硬度的變化率分別為大至+350%，+400%，+200%，接著劑的狀態（性狀）也脆弱。進而，比較例4的接著劑，300℃的耐熱試驗後的硬度的變化率為-100%，接著劑的狀態（性狀）為柔軟。並且，防塵薄膜組件的耐熱試驗中，觀察到防塵薄膜從防塵薄膜組件框架的剝離，確認到比較例1～4中使用的接著劑耐熱性差。According to the results of the above Table 1, in the adhesives used in Examples 1 to 4, the change rates of the hardness after the heat resistance test at 300 ° C were +40%, +50%, -30%, and +50% were suppressed. In the heat resistance test of the pellicle film assembly using the adhesive, the puncture film is in a state of being tight, and the adhesives used in Examples 1 to 4 have no deterioration in adhesion at high temperatures. It is confirmed that it has high heat resistance. On the other hand, in the adhesives used in Comparative Examples 1 to 3, the rate of change in hardness after the heat resistance test at 300 ° C was as large as +350%, +400%, +200%, and the state (trait) of the adhesive was also fragile. Further, in the adhesive of Comparative Example 4, the rate of change in hardness after the heat resistance test at 300 ° C was -100%, and the state (characteristic) of the adhesive was soft. Further, in the heat resistance test of the pellicle film assembly, peeling of the pellicle film from the pellicle frame was observed, and it was confirmed that the adhesives used in Comparative Examples 1 to 4 were inferior in heat resistance.
如此，實施例1～4中使用的矽系接著劑的KE-1803、KE-1854、KE-1880以及環氧系接著劑的EK2000耐熱性優良，特別是，作為EUV曝光時使用的防塵薄膜組件的接著劑，綜合來看非常適宜。As described above, the EK-1803, KE-1854, KE-1880, and epoxy-based adhesives of the bismuth-based adhesives used in Examples 1 to 4 are excellent in heat resistance, in particular, as a pellicle for use in EUV exposure. The adhesive is very suitable from a comprehensive perspective.
1‧‧‧防塵薄膜組件
2‧‧‧接著劑塗布裝置
11‧‧‧防塵薄膜
12、24‧‧‧防塵薄膜組件框架
13‧‧‧接著劑
21‧‧‧架台
22‧‧‧3軸機器人
23‧‧‧注射筒
25‧‧‧針1‧‧‧Plastic membrane assembly
2‧‧‧Binder coating device
11‧‧‧Dust film
12, 24‧‧‧Plastic membrane assembly frame
13‧‧‧Binder
21‧‧‧ 台台
22‧‧‧3 axis robot
23‧‧‧ syringe
25‧‧‧ needle
圖1是使用本發明的接著劑的防塵薄膜組件的縱截面圖。 圖2是在本發明的防塵薄膜組件的製造時使用的接著劑塗布裝置的概略說明圖。BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a longitudinal sectional view showing a pellicle assembly using an adhesive of the present invention. Fig. 2 is a schematic explanatory view of an adhesive applicator used in the production of the pellicle according to the present invention.
無。no.
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| JPS58219023A (en) | 1982-06-15 | 1983-12-20 | Daicel Chem Ind Ltd | Manufacture of resin membrane |
| JPS6327707A (en) | 1986-07-21 | 1988-02-05 | Matsushita Electric Ind Co Ltd | Apparatus for inspecting hyperbolic mirror |
| JPH01278019A (en) * | 1988-04-28 | 1989-11-08 | Canon Inc | Structure of lithography mask |
| JP3449180B2 (en) * | 1997-06-27 | 2003-09-22 | 信越化学工業株式会社 | Pellicle |
| US6492067B1 (en) * | 1999-12-03 | 2002-12-10 | Euv Llc | Removable pellicle for lithographic mask protection and handling |
| US6623893B1 (en) | 2001-01-26 | 2003-09-23 | Advanced Micro Devices, Inc. | Pellicle for use in EUV lithography and a method of making such a pellicle |
| JP5067929B2 (en) * | 2007-06-01 | 2012-11-07 | 信越ポリマー株式会社 | Manufacturing method of fixing roller |
| JP5711703B2 (en) * | 2012-09-03 | 2015-05-07 | 信越化学工業株式会社 | EUV pellicle |
| JP6084681B2 (en) * | 2013-03-15 | 2017-02-22 | 旭化成株式会社 | Pellicle membrane and pellicle |
| US10139725B2 (en) * | 2013-03-27 | 2018-11-27 | Asml Netherlands B.V. | Lithographic apparatus |
| JP6364404B2 (en) * | 2013-05-24 | 2018-07-25 | 三井化学株式会社 | Pellicle and EUV exposure apparatus including the same |
| JP2015018228A (en) * | 2013-06-10 | 2015-01-29 | 旭化成イーマテリアルズ株式会社 | Pellicle film and pellicle |
| JP6326056B2 (en) * | 2013-09-30 | 2018-05-16 | 三井化学株式会社 | Pellicle film, pellicle using the same, exposure original plate and exposure apparatus, and method for manufacturing semiconductor device |
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