CN111679549A - Adhesive suitable for pellicle for EUV lithography and pellicle using the same - Google Patents
Adhesive suitable for pellicle for EUV lithography and pellicle using the same Download PDFInfo
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- CN111679549A CN111679549A CN202010637924.8A CN202010637924A CN111679549A CN 111679549 A CN111679549 A CN 111679549A CN 202010637924 A CN202010637924 A CN 202010637924A CN 111679549 A CN111679549 A CN 111679549A
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- pellicle
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- 239000000853 adhesive Substances 0.000 title claims abstract description 152
- 230000001070 adhesive effect Effects 0.000 title claims abstract description 144
- 238000001900 extreme ultraviolet lithography Methods 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- 239000012298 atmosphere Substances 0.000 claims abstract description 13
- 239000010408 film Substances 0.000 claims description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 239000010409 thin film Substances 0.000 claims description 14
- 239000004593 Epoxy Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 13
- 239000004973 liquid crystal related substance Substances 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 6
- 239000011231 conductive filler Substances 0.000 claims 7
- 238000010187 selection method Methods 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 10
- 238000001723 curing Methods 0.000 description 10
- 238000012360 testing method Methods 0.000 description 9
- 239000007788 liquid Substances 0.000 description 7
- 239000000428 dust Substances 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000007687 exposure technique Methods 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000013007 heat curing Methods 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- -1 polyethylene Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- HIXDQWDOVZUNNA-UHFFFAOYSA-N 2-(3,4-dimethoxyphenyl)-5-hydroxy-7-methoxychromen-4-one Chemical compound C=1C(OC)=CC(O)=C(C(C=2)=O)C=1OC=2C1=CC=C(OC)C(OC)=C1 HIXDQWDOVZUNNA-UHFFFAOYSA-N 0.000 description 1
- 229920003319 Araldite® Polymers 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- ZAFNJMIOTHYJRJ-UHFFFAOYSA-N Diisopropyl ether Chemical compound CC(C)OC(C)C ZAFNJMIOTHYJRJ-UHFFFAOYSA-N 0.000 description 1
- NHTMVDHEPJAVLT-UHFFFAOYSA-N Isooctane Chemical compound CC(C)CC(C)(C)C NHTMVDHEPJAVLT-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229920002301 cellulose acetate Polymers 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- JVSWJIKNEAIKJW-UHFFFAOYSA-N dimethyl-hexane Natural products CCCCCC(C)C JVSWJIKNEAIKJW-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- JBTWLSYIZRCDFO-UHFFFAOYSA-N ethyl methyl carbonate Chemical compound CCOC(=O)OC JBTWLSYIZRCDFO-UHFFFAOYSA-N 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920001083 polybutene Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Paints Or Removers (AREA)
Abstract
Provided are an adhesive agent suitable for a dustproof pellicle assembly for EUV lithography, a dustproof pellicle assembly using the same, a manufacturing method of the dustproof pellicle assembly, and a selection method of the adhesive agent suitable for the dustproof pellicle assembly for EUV lithography. The adhesive of the present invention has a hardness change rate represented by the following formula within a range of ± 50% when a cured product of the adhesive is allowed to stand continuously for 7 days in an atmosphere at 300 ℃. Formula (II): a rate of change (%) in hardness { (hardness after the standing) - (hardness before the standing) } ÷ (hardness before the standing) × 100.
Description
The present application is filed 2016, 10, 25 and entitled "dust pellicle assembly suitable for EUV lithography and dust pellicle assembly using the same", and is a divisional application of the invention patent application No. 201610937977.5.
Technical Field
The present invention relates to an adhesive suitable for a pellicle for EUV lithography and a pellicle using the same, and more particularly to an adhesive suitable for a pellicle when performing lithography using EUV (Extreme Ultra-Violet) light having a dominant wavelength of 13.5nm, for example, and a pellicle using the same.
Background
In semiconductor manufacturing such as LSI and super LSI, or in manufacturing liquid crystal panels, a semiconductor wafer or liquid crystal is irradiated with light to form a pattern, and if dust adheres to a photomask or a reticle (hereinafter, collectively referred to as "photomask") used in this case, the dust blocks and reflects the irradiated light, and the edges of the pattern transferred are uneven, and the substrate is blackened, which deteriorates the size, quality, appearance, and the like.
Accordingly, such work is usually performed in a clean room, but even then, it is difficult to keep the photomask clean, and therefore, the exposure is performed after the pellicle assembly used as a dust catcher is attached to the surface of the photomask. Thus, the foreign matter such as dust is not attached to the surface of the photomask any more, but is attached to the pellicle, so that the foreign matter image is not generated in the transferred pattern by aligning the focus with the pattern of the photomask during photolithography, and the above-mentioned problem can be avoided.
Such a pellicle is generally a transparent pellicle made of nitrocellulose, cellulose acetate, fluororesin or the like which transmits light well, and is adhered to the upper end face of a pellicle frame made of aluminum, stainless steel, polyethylene or the like which is coated with a good solvent for the pellicle and air-dried (see patent document 1), or is adhered with an adhesive such as an acrylic resin or an epoxy resin (see patent document 2). The pellicle frame has an adhesive layer made of polybutene resin, polyvinyl acetate resin, acrylic resin, silicone resin, etc. for attaching a photomask and a release layer (release film) for protecting the adhesive layer on the lower end surface.
However, in recent years, semiconductor devices and liquid crystal panels have been increasingly integrated and miniaturized. At present, a technique for forming a fine pattern of about 32nm on a photoresist film has also been put to practical use. In the case of a pattern of about 32nm, it is possible to cope with a conventional improvement technique using an excimer laser, such as immersion exposure technique in which a space between a semiconductor wafer or a liquid crystal original plate and a projection lens is filled with a liquid such as ultrapure water and exposure is performed on a photoresist film using an ArF excimer laser, and multiple exposure.
However, it is required to form a pattern of 10nm or less which is further miniaturized in the next-generation semiconductor device and liquid crystal panel, but the formation of such a miniaturized pattern of 10nm or less is not possible by the conventional exposure improvement technique using an excimer laser.
Therefore, as a method for forming a pattern of 10nm or less, an EUV exposure technique using EUV light having a dominant wavelength of 13.5nm becomes necessary. In the case of forming a fine pattern of 10nm or less on a photoresist film by using such an EUV exposure technique, it is necessary to solve the technical problems of what kind of light source is used, what kind of photoresist is used, what kind of pellicle is used, and the like.
Among them, as for a pellicle for preventing the yield of a semiconductor device or a liquid crystal panel, for example, patent document 3 describes a pellicle made of silicon having a thickness of 0.1 to 2.0 μm which is transparent and does not cause optical distortion as a pellicle for EUV lithography used in the pellicle for EUV lithography, but there is an unsolved problem in the point of practical use, and such a problem becomes a great obstacle to the practical use of the EUV exposure technology.
Prior art documents
Patent document
Japanese patent laid-open No. Sho 58-219023 of patent document 1
In general, the material of the adhesive used for attaching the pellicle to the pellicle assembly frame is selected in consideration of the adhesion from those used in conventional exposure using i-line (wavelength 365nm), exposure using KrF excimer laser light (wavelength 248nm), and exposure using ArF excimer laser light (wavelength 193 nm).
However, when experiments are conducted in an environment where a fine pattern of 10nm or less is formed on a photoresist film by the intended EUV lithography technique, the adhesive used in the past often peels off from the pellicle frame.
Therefore, the present inventors have found, as a result of repeated simulations on a PC to solve the above-mentioned problems, that the EUV light-irradiated portion of the silicon pellicle may be heated to a temperature of about 500 ℃ by the EUV light, and that the adhesive for bonding the pellicle to the pellicle frame may reach 200 to 300 ℃ by calculation. Therefore, the peeling of the dust-proof film in the above experiment may be caused by the high temperature. That is, the adhesive is brittle at high temperature and thus makes it difficult to prevent peeling of the dust-proof film when the hardness increases, while it is fluid at high temperature and thus makes it impossible to fix the dust-proof film and prevent peeling of the dust-proof film when the hardness decreases. Therefore, in the pellicle for EUV lithography, if the adhesive has low stability to heat and is heated, the adhesive is excessively cured and softened, and adhesion cannot be maintained.
The present invention has been made in view of the above circumstances, and an object thereof is to provide an adhesive suitable for a pellicle for EUV lithography excellent in heat resistance (temperature stability) in a high temperature range generated in EUV lithography, a pellicle using the same, a method for producing the pellicle, and a method for selecting an adhesive suitable for a pellicle for EUV lithography.
Disclosure of Invention
The present inventors have intensively studied to solve the above problems, and have found that an adhesive having a hardness change rate within a range of ± 50% when continuously left for 7 days in an atmosphere of 300 ℃ among a plurality of types of adhesives is suitable for the EUV exposure technique, and have completed the present invention.
That is, the adhesive of the present invention is an adhesive suitable for a pellicle for EUV lithography for attaching a pellicle to a pellicle frame, wherein a rate of change in hardness represented by the following formula, in which a cured product of the adhesive is allowed to stand continuously in an atmosphere at 300 ℃ for 7 days, is within ± 50%.
Formula (II): a rate of change (%) in hardness { (hardness after standing) - (hardness before standing) } ÷ (hardness before standing) × 100
Further, the present invention is a pellicle for EUV lithography comprising a pellicle and a pellicle frame, and an adhesive for bonding these members to each other, wherein the adhesive of the present invention is used as the adhesive.
Further, a method for producing a pellicle for EUV lithography, which comprises a pellicle, a pellicle frame, and an adhesive for bonding the pellicle frame to the pellicle frame, according to the present invention, comprises a step of applying the adhesive according to the present invention to the pellicle frame.
Further, the adhesive selecting method of the present invention is a method of selecting an adhesive suitable for an EUV lithography pellicle for attaching a pellicle of the EUV lithography pellicle to a pellicle frame, wherein the adhesive is selected as the adhesive suitable for the EUV lithography pellicle, wherein the adhesive satisfies a condition that a rate of change in hardness expressed by the following formula satisfies ± 50% when a cured product of the tested adhesive is allowed to stand continuously for 7 days in an atmosphere at 300 ℃.
Formula (II): a rate of change (%) in hardness { (hardness after standing) - (hardness before standing) } ÷ (hardness before standing) × 100
ADVANTAGEOUS EFFECTS OF INVENTION
The adhesive of the present invention has stability in the high temperature field in the EUV exposure technology, so that the adhesion between the pellicle and the pellicle frame can be maintained in EUV lithography. Therefore, by bonding the pellicle film and the pellicle frame with the adhesive of the present invention, a fine pattern of 10nm or less can be formed in the resist film by EUV light.
Drawings
FIG. 1 is a longitudinal sectional view of a pellicle using the adhesive of the present invention.
FIG. 2 is a schematic explanatory view of an adhesive applying apparatus used in the production of the pellicle of the present invention.
Detailed Description
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings, but the present invention is not limited thereto.
FIG. 1 is a longitudinal sectional view of an embodiment of a pellicle assembly 1 of the present invention using an adhesive 13 of the present invention. The pellicle 1 is provided with a pellicle film 11, a pellicle frame 12, and an adhesive 13 for bonding these members to each other. In the pellicle 1, the pellicle film 11 is stretched with an adhesive 13 on the upper end surface of a pellicle frame 12, which is generally rectangular frame-shaped (rectangular frame-shaped or square frame-shaped) corresponding to the shape of a substrate (photomask or glass substrate portion: not shown) to be attached to the pellicle 1.
The material of the dust-proof film 11 and the dust-proof pellicle unit frame 12 is not particularly limited, and known materials can be used.
The material of the dust-proof film 11 is monocrystalline silicon, polycrystalline silicon, amorphous silicon, or the like, but is preferably highly transparent to EUV light. Further, for protecting the dust-proof film 11, SiC or SiO may be used2，Si3N4，SiON，Y2O3YN, Mo, Ru, Rh, etc.
The material of the pellicle frame 12 is preferably glass or metal having a small linear expansion coefficient, but metal is more preferable from the viewpoint of heat dissipation, workability, and strength.
The adhesive 13 of the present invention is applied to the entire periphery of the upper end surface of the pellicle frame 12, and is intended to attach the pellicle film 11 to the pellicle frame 12. The adhesive 13 of the present invention is characterized in that the cured product of the adhesive has a hardness variation rate of + -50% as shown by the following formula when continuously left standing for 7 days in an atmosphere of 300 ℃. Such an adhesive has high heat resistance (temperature stability) in EUV lithography, and is therefore particularly suitable for pellicle for EUV lithography. In the present specification and claims, the "hardness" of a cured product such as an adhesive is a hardness in accordance with JIS K6249: 2003, hardness values obtained in hardness tests using a durometer type a device in particular.
Formula (II): a rate of change (%) in hardness { (hardness after standing) - (hardness before standing) } ÷ (hardness before standing) × 100
In order to obtain the adhesive 13 of the present invention, for example, a commercially available adhesive may be purchased first, and selected so as to satisfy the condition that the rate of change in hardness represented by the above formula when the cured product of the adhesive is left to stand in an atmosphere of 300 ℃ for 7 days continuously is within a range of ± 50%. Thus, an adhesive suitable for a pellicle for EUV lithography can be obtained easily without requiring a complicated production process.
Specific examples of the adhesive 13 satisfying such conditions include commercially available silicon adhesives KE-1803 and KE-1854 (both trade names manufactured by shin-Etsu chemical Co., Ltd.), an Epoxy adhesive EK2000(Epoxy Technology, product name manufactured by Inc.), and the like. They have high heat resistance at 300 ℃ or lower and are suitable for use. KE-1803, which is a three-chamber warm curing type according to the product specification, has a short time to heat curing. KE-1854 is a one-liquid heat-curable type, and EK2000 is a two-liquid heat-curable type.
The adhesive 13 of the present invention is not limited in its curing method, and may be any curing method, such as one-pack room-temperature curing, one-pack heat curing, two-pack room-temperature curing, two-pack heat curing, three-pack room-temperature curing, or ultraviolet curing.
The adhesive 13 of the present invention is suitable for bonding a pellicle to a pellicle frame, particularly in a pellicle for EUV lithography. As described above, the energy of the exposure light during EUV exposure may cause the pellicle to be partially at a high temperature of even up to 500 ℃, and further the adhesive used for bonding the pellicle to the pellicle frame may be at a temperature of up to 200 ℃ to 300 ℃.
Therefore, the adhesive 13 of the present invention needs to have sufficient heat resistance in such a high temperature range, and when the adhesive 13 satisfying the above conditions of the present invention is used in a heat resistance test of a dustproof pellicle assembly using the adhesive 13 of the present invention (after the dustproof pellicle assembly 1 is continuously left standing in an oven at 250 ℃ for 7 days, it is cooled to room temperature), it is confirmed that the tightened state of the dustproof pellicle 11 at a high temperature of 250 ℃ is satisfactorily maintained (see examples described later). This is considered to be due to the fact that the adhesive 13 of the present invention can maintain sufficient adhesion even at a high temperature of 250 ℃, which indicates that the adhesive 13 of the present invention has heat resistance not only in a high temperature region of 200 ℃ even up to 300 ℃.
When the adhesive 13 having such high heat resistance is applied to the pellicle frame 12, it can be applied by an adhesive application device shown in fig. 2, for example. Fig. 2 is a schematic view of an example of a suitable adhesive application device for applying the adhesive 3. The adhesive applying apparatus 2 is a 3-axis robot 22 configured by combining a fixed rail and a movable rail that are movable in XYZ axis directions, and a syringe 23 is attached above a mount 21. The syringe 23 has a needle 25 at its tip, and the syringe 23 filled with the adhesive 13 is connected to an air pressure distributor (not shown), and both the operation of the robot and the discharge of the coating liquid are controlled by a control unit (not shown) of the 3-axis robot 22.
Then, the needle 25 moves while dropping the adhesive on the pellicle frame 24 attached to the mount 21 of the adhesive application device 2, whereby the adhesive 13 is applied to the pellicle frame 24. The transfer device (not shown) for the adhesive 13 in this case is not limited to air pressurization, gas pressurization such as nitrogen pressurization, a syringe pump, a reciprocating pump, a tube pump, and the like, and various transfer devices can be used as long as the supply amount and discharge/stop can be controlled.
If necessary, an aromatic compound such as toluene or xylene, an aliphatic solvent such as hexane, isooctane or isoparaffin, a ketone solvent such as methyl ethyl ketone or methyl isobutyl ketone, an ester solvent such as ethyl acetate or butyl acetate, an ether solvent such as diisopropyl ether or 1, 4-dioxane, or a mixed solvent thereof may be added to the adhesive 13 in the case where the viscosity is high and the application by the applicator 2 is difficult.
Examples
The present invention will be specifically described below with reference to examples and comparative examples.
Example 1
First, a pellicle frame 24 made of super stainless steel (iron, an alloy of nickel and cobalt) having an outer dimension of 151mm × 118mm × a height of 1.5mm and a thickness of 4mm was carried into a clean room, and thoroughly washed and dried with a neutral detergent and pure water. Thereafter, the pellicle frame 24 is fixed to the mount 21 of the adhesive application device 2 shown in fig. 2.
On the other hand, as the highly heat-resistant adhesive 13, a silicon-based KE-1803 (product name of shin-Etsu chemical Co., Ltd.) was used. Since the KE-1803 is a three-chamber thermal curing type, the main agent, the curing agent and the catalyst of KE-1803 are weighed in a mass ratio of 100/10/10 in accordance with the amount of the catalyst used, and are sufficiently stirred and mixed to prepare the curing agent.
Next, the prepared adhesive 13 was loaded into a polypropylene (PP) syringe 23 of the adhesive application device 2 shown in fig. 2, and the syringe 23 was connected to an air pressure distributor (not shown, manufactured by underrock engineering co., ltd.). In the adhesive application apparatus 2, the control unit (not shown) of the 3-axis robot 22 controls both the robot operation and the application liquid discharge, and automatically operates to apply the adhesive 13 by dripping from the needle 25 over the entire circumference of the dustproof pellicle assembly frame 24 in the circumferential direction.
Thereafter, the dust-proof film 11 is attached to the adhesive application end face side of the dust-proof pellicle assembly frame 24, and unnecessary films on the outer side are cut off with a knife. The adhesive 13 was further left to stand at room temperature (25 ℃ C.) for 24 hours to harden, and the pellicle assembly 1 was obtained.
Example 2
A pellicle 1 was fabricated in the same manner as in example 1, except that a silicon-based one-liquid thermosetting KE-1854 (trade name, product of shin-Etsu chemical Co., Ltd.) was used as the adhesive 13.
Example 3
A pellicle 1 was fabricated in the same manner as in the example, except that a silicon-based one-liquid thermosetting KE-1880 (trade name, product of shin-Etsu chemical Co., Ltd.) was used as the adhesive 13.
Example 4
A pellicle 1 was produced in the same manner as in example 1, except that an Epoxy-based two-pack thermosetting EK2000 (manufactured by Epoxy Technology, Inc.: product name) was used as the adhesive 13.
Comparative example 1
A pellicle 1 was produced in the same manner as in example 1 except that Araldite AV 138M-1 (product name, Ciba-Geigy) having epoxy-based heat-resistant adhesive was used as the adhesive 13.
Comparative example 2
A dust-proof pellicle 1 was produced in the same manner as in example 1 except that an acrylic heat-resistant adhesive methylalrock (product name: manufactured by Cemedine corporation) was used as the adhesive 13, and the socks were removed.
Comparative example 3
A pellicle 1 was fabricated in the same manner as in example 1, except that a silicon-based adhesive KE-3490 (trade name, manufactured by shin-Etsu chemical Co., Ltd.) was used as the adhesive 13.
Comparative example 4
A pellicle 1 was fabricated in the same manner as in example 1, except that an epoxy-based heat-resistant adhesive Araldite2000 (product name, manufactured by Ciba-Geigy) was used as the adhesive 13.
Heat resistance test of adhesive
Only the cured products obtained by curing the adhesives 13 used in examples 1 to 4 and comparative examples 1 to 4 were continuously left in an oven at 300 ℃ for 7 days, and then cooled to room temperature to evaluate heat resistance. The index for evaluating heat resistance was compared with the rate of change in hardness represented by the following formula. The results are shown in Table 1.
Formula (II): a rate of change (%) in hardness { (hardness after standing) - (hardness before standing) } ÷ (hardness before standing) × 100
Heat resistance test of dustproof thin film assembly
The dustproof pellicle assemblies 1 prepared in examples 1 to 4 and comparative examples 1 to 4 were continuously left standing in an oven at 250 ℃ for 7 days, then cooled to room temperature, and the tightened state of the dustproof pellicle 11 was confirmed. The results are shown in Table 1.
TABLE 1
From the results of table 1 above, it was confirmed that the adhesives used in examples 1 to 4 had a very low rate of change in hardness after the heat resistance test at 300 ℃ of + 40%, + 50%, + 30%, + 50%, and a good state of the dust-proof film in the heat resistance test of the dust-proof film module used in the adhesives, and the adhesives used in examples 1 to 4 had a high heat resistance without deterioration in the adhesive strength at high temperatures.
On the other hand, the adhesives used in comparative examples 1 to 3 had a large change rate of hardness after the heat resistance test at 300 ℃ of + 350%, + 400%, + 200%, respectively, and the state (properties) of the adhesive was also brittle. Further, the adhesive of comparative example 4 had a hardness change rate of-100% after the heat resistance test at 300 ℃ and the state (property) of the adhesive was soft. In the heat resistance test of the dustproof thin film assembly, peeling of the dustproof thin film assembly frame from the dustproof thin film assembly frame is observed, and the adhesive used in comparative examples 1 to 4 is confirmed to have poor heat resistance.
As described above, the silicon-based adhesives KE-1803, KE-1854, KE-1880 used in examples 1 to 4 and the epoxy-based adhesives EK2000 are excellent in heat resistance, and are particularly suitable as an adhesive for pellicle members used in EUV exposure in combination.
Description of the symbols
1 dustproof pellicle
2 adhesive applying device
11 dustproof film
12 dustproof pellicle assembly frame
13 adhesive
21 stand
223-axis robot
23 injection cylinder
24 pellicle assembly frame
25 needles
Claims (17)
1. An adhesive agent for use in a pellicle for EUV lithography, wherein 90 parts by mass, 100 to 4000 parts by mass or 4500 parts by mass of a thermally conductive filler is not added to 100 parts by mass of the adhesive agent, wherein a rate of change in hardness represented by the following formula when a cured product of the adhesive agent is allowed to stand continuously in an atmosphere at 300 ℃ for 7 days is within a range of + -50%,
formula (II): a rate of change (%) in hardness { (hardness after the standing) - (hardness before the standing) } ÷ (hardness before the standing) × 100.
2. Use according to claim 1, wherein the adhesive is a silicon-based adhesive or an epoxy-based adhesive.
3. An adhesive agent for use in the production of a pellicle for EUV lithography, wherein 90 parts by mass, 100 to 4000 parts by mass or 4500 parts by mass of a thermally conductive filler is not added to 100 parts by mass of the adhesive agent, wherein a rate of change in hardness represented by the following formula when a cured product of the adhesive agent is allowed to stand continuously in an atmosphere at 300 ℃ for 7 days is within a range of + -50%,
formula (II): a rate of change (%) in hardness { (hardness after the standing) - (hardness before the standing) } ÷ (hardness before the standing) × 100.
4. Use according to claim 3, wherein the adhesive is a silicon-based adhesive or an epoxy-based adhesive.
5. A pellicle for EUV lithography, which is configured by bonding a pellicle film to a pellicle frame with an adhesive, characterized in that the adhesive is used in a range in which the rate of change in hardness, expressed by the following formula, when a cured product of the adhesive is allowed to stand continuously for 7 days in an atmosphere at 300 ℃, is within + -50%, but 90 parts by mass, 100 to 4000 parts by mass, or 4500 parts by mass of a thermally conductive filler is not added to 100 parts by mass of the adhesive,
formula (II): a rate of change (%) in hardness { (hardness after the standing) - (hardness before the standing) } ÷ (hardness before the standing) × 100.
6. The pellicle for EUV lithography according to claim 5, characterized in that the adhesive is a silicon-based adhesive or an epoxy-based adhesive.
7. A photomask to which a pellicle for EUV lithography is attached, characterized in that the pellicle for EUV lithography according to claim 5 or 6 is attached to the photomask.
8. An application of a dustproof pellicle assembly formed by adhering a dustproof pellicle film to a dustproof pellicle assembly frame through an adhesive in EUV lithography is characterized in that the adhesive is used in the range of + -50% of the change rate of hardness represented by the following formula when a hardened material of the adhesive is continuously left standing for 7 days in an atmosphere at 300 ℃, but 90 parts by mass, 100-4000 parts by mass or 4500 parts by mass of a heat-conductive filler is not mixed with 100 parts by mass of the adhesive,
formula (II): a rate of change (%) in hardness { (hardness after the standing) - (hardness before the standing) } ÷ (hardness before the standing) × 100.
9. Use according to claim 8, wherein the adhesive is a silicon-based adhesive or an epoxy-based adhesive.
10. An application of a dustproof pellicle assembly formed by adhering a dustproof pellicle to a dustproof pellicle assembly frame by an adhesive in exposure at a temperature of 200-300 ℃, characterized in that the adhesive is used in a range of + -50% of a change rate of hardness represented by the following formula when a cured product of the adhesive is continuously left standing for 7 days in an atmosphere of 300 ℃, but 90 parts by mass, 100-4000 parts by mass or 4500 parts by mass of a thermally conductive filler is not mixed with 100 parts by mass of the adhesive,
formula (II): a rate of change (%) in hardness { (hardness after the standing) - (hardness before the standing) } ÷ (hardness before the standing) × 100.
11. Use according to claim 10, wherein the adhesive is a silicon-based adhesive or an epoxy-based adhesive.
12. A method for manufacturing a semiconductor, characterized in that EUV exposure is performed using the photomask to which the pellicle for EUV lithography is attached according to claim 7.
13. A method for manufacturing a semiconductor, characterized in that exposure is performed at a temperature of 200 to 300 ℃ using a photomask to which a pellicle is attached,
the photomask with the dustproof thin film component is formed by attaching the dustproof thin film component on the photomask,
the dustproof thin film component is formed by adhering the dustproof thin film on the dustproof thin film component frame through an adhesive,
the adhesive is used in which the rate of change in hardness represented by the following formula is within a range of + -50% when the cured product of the adhesive is allowed to stand continuously for 7 days in an atmosphere at 300 ℃, but 90 parts by mass, 100 to 4000 parts by mass or 4500 parts by mass of a thermally conductive filler is not added to 100 parts by mass of the adhesive,
formula (II): a rate of change (%) in hardness { (hardness after the standing) - (hardness before the standing) } ÷ (hardness before the standing) × 100.
14. The method for manufacturing a semiconductor according to claim 13, wherein the adhesive is a silicon-based adhesive or an epoxy-based adhesive.
15. A method for manufacturing a liquid crystal panel, characterized in that EUV exposure is performed using the photomask to which the pellicle for EUV lithography of claim 7 is attached.
16. A method for manufacturing a liquid crystal panel, characterized in that exposure is performed at a temperature of 200 to 300 ℃ using a photomask to which a pellicle is attached,
the photomask with the dustproof thin film component is formed by attaching the dustproof thin film component on the photomask,
the dustproof thin film component is formed by adhering the dustproof thin film on the dustproof thin film component frame through an adhesive,
the adhesive is used in which the rate of change in hardness represented by the following formula is within a range of + -50% when the cured product of the adhesive is allowed to stand continuously for 7 days in an atmosphere at 300 ℃, but 90 parts by mass, 100 to 4000 parts by mass or 4500 parts by mass of a thermally conductive filler is not added to 100 parts by mass of the adhesive,
formula (II): a rate of change (%) in hardness { (hardness after the standing) - (hardness before the standing) } ÷ (hardness before the standing) × 100.
17. The method of manufacturing a liquid crystal panel according to claim 16, wherein the adhesive is a silicon-based adhesive or an epoxy-based adhesive.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010637924.8A CN111679549B (en) | 2015-10-29 | 2016-10-25 | Adhesive suitable for pellicle for EUV lithography and pellicle using the adhesive |
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| Application Number | Priority Date | Filing Date | Title |
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| JP2015-212619 | 2015-10-29 | ||
| JP2015212619 | 2015-10-29 | ||
| JP2015245060A JP6516665B2 (en) | 2015-10-29 | 2015-12-16 | Adhesive suitable for pellicle for EUV lithography and pellicle using the same |
| JP2015-245060 | 2015-12-16 | ||
| CN202010637924.8A CN111679549B (en) | 2015-10-29 | 2016-10-25 | Adhesive suitable for pellicle for EUV lithography and pellicle using the adhesive |
| CN201610937977.5A CN106647161B (en) | 2015-10-29 | 2016-10-25 | Adhesive suitable for pellicle for EUV lithography and pellicle using the same |
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| CN201610937977.5A Division CN106647161B (en) | 2015-10-29 | 2016-10-25 | Adhesive suitable for pellicle for EUV lithography and pellicle using the same |
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| CN201610937977.5A Active CN106647161B (en) | 2015-10-29 | 2016-10-25 | Adhesive suitable for pellicle for EUV lithography and pellicle using the same |
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| CN201610937977.5A Active CN106647161B (en) | 2015-10-29 | 2016-10-25 | Adhesive suitable for pellicle for EUV lithography and pellicle using the same |
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| JP (1) | JP6516665B2 (en) |
| KR (1) | KR102634999B1 (en) |
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| JP7451442B2 (en) * | 2017-10-10 | 2024-03-18 | 信越化学工業株式会社 | Ventilation structure of EUV pellicle frame, EUV pellicle, exposure master plate with EUV pellicle, exposure method, and semiconductor manufacturing method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2015018228A (en) * | 2013-06-10 | 2015-01-29 | 旭化成イーマテリアルズ株式会社 | Pellicle film and pellicle |
| CN106597806A (en) * | 2015-10-19 | 2017-04-26 | 信越化学工业株式会社 | A pellicle for EUV |
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| JPS6327707A (en) | 1986-07-21 | 1988-02-05 | Matsushita Electric Ind Co Ltd | Apparatus for inspecting hyperbolic mirror |
| JPH01278019A (en) * | 1988-04-28 | 1989-11-08 | Canon Inc | Structure of lithography mask |
| JP3449180B2 (en) * | 1997-06-27 | 2003-09-22 | 信越化学工業株式会社 | Pellicle |
| US6492067B1 (en) * | 1999-12-03 | 2002-12-10 | Euv Llc | Removable pellicle for lithographic mask protection and handling |
| US6623893B1 (en) | 2001-01-26 | 2003-09-23 | Advanced Micro Devices, Inc. | Pellicle for use in EUV lithography and a method of making such a pellicle |
| JP5067929B2 (en) * | 2007-06-01 | 2012-11-07 | 信越ポリマー株式会社 | Manufacturing method of fixing roller |
| JP5711703B2 (en) * | 2012-09-03 | 2015-05-07 | 信越化学工業株式会社 | EUV pellicle |
| JP6084681B2 (en) * | 2013-03-15 | 2017-02-22 | 旭化成株式会社 | Pellicle membrane and pellicle |
| US10139725B2 (en) * | 2013-03-27 | 2018-11-27 | Asml Netherlands B.V. | Lithographic apparatus |
| JP6364404B2 (en) * | 2013-05-24 | 2018-07-25 | 三井化学株式会社 | Pellicle and EUV exposure apparatus including the same |
| JP6326056B2 (en) * | 2013-09-30 | 2018-05-16 | 三井化学株式会社 | Pellicle film, pellicle using the same, exposure original plate and exposure apparatus, and method for manufacturing semiconductor device |
| KR102338110B1 (en) * | 2013-12-16 | 2021-12-09 | 모멘티브 파포만스 마테리아루즈 쟈판 고도가이샤 | Addition-curable silicone composition |
| JP6308592B2 (en) * | 2014-04-02 | 2018-04-11 | 信越化学工業株式会社 | EUV pellicle |
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| JP2015018228A (en) * | 2013-06-10 | 2015-01-29 | 旭化成イーマテリアルズ株式会社 | Pellicle film and pellicle |
| CN106597806A (en) * | 2015-10-19 | 2017-04-26 | 信越化学工业株式会社 | A pellicle for EUV |
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| TWI607075B (en) | 2017-12-01 |
| JP2017083806A (en) | 2017-05-18 |
| CN106647161B (en) | 2020-08-18 |
| CN106647161A (en) | 2017-05-10 |
| KR102634999B1 (en) | 2024-02-07 |
| KR20170051226A (en) | 2017-05-11 |
| CN111679549B (en) | 2024-04-16 |
| TW201726875A (en) | 2017-08-01 |
| JP6516665B2 (en) | 2019-05-22 |
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