TW201723208A - Film formation apparatus and data production method consisting of processing chamber, gas supply portion, gas discharge portion, film formation portion, input portion, storage portion and determining portion - Google Patents

Abstract

The present invention provides a film formation apparatus and a data production method that can perform a film formation technology with high accuracy and stability and with desired film color. In the film forming apparatus, the determining portion determines the film formation condition with reference to the corresponding data based on the color information inputted from the input portion; in addition, the film formation condition includes at least a gas supply amount as a film color adjustment factor; it is known that, in general, the kind of gas supplied or the supply amount thereof at the time of film formation are the main film color adjustment factors. Therefore, the embodiment of the present invention can perform the desired film formation treatment of film color with high accuracy and stability as compared with the embodiment according to the intuition or experience of the operator for adjusting the film formation condition.

Description

Film forming apparatus and data producing method

The present invention relates to a film forming apparatus for forming a film on a surface of a substrate and a method of producing data used in the film forming apparatus.

A technique is known in which the color of the obtained film is adjusted by adjusting the film formation conditions when a film is formed on the surface of the substrate. As such a technique, for example, Patent Document 1 and Patent Document 2 disclose a technique of obtaining a gold alloy coating film having a red color by a dry plating method. [Prior Art Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2008-108818 (Patent Document 2) Japanese Patent Laid-Open Publication No. 2003-82452

[Problems to be Solved by the Invention] When a film of a certain color is to be formed, as long as there is data obtained by performing film formation processing of the same color in the past, the same film forming conditions as in the past processing are referred to by referring to the data. The film of the target color can be obtained by performing the film forming process.

On the other hand, in the case where a film of a certain color is to be formed, if the data obtained by the film formation process of the same color is not performed in the past, the film formation conditions are generally adjusted according to the intuition or experience of the operator of the film forming apparatus.

However, in the above-described embodiment, it is difficult to avoid the influence of the error of each operator, and the film formation process of the desired film color can be performed with high precision and stability.

Accordingly, an object of the present invention is to provide a technique capable of performing a film formation process of a desired film color with high precision and stability.

[Means for Solving the Problems] The film forming apparatus according to the first embodiment of the present invention is a film forming apparatus for forming a film on a surface of a substrate, comprising: a processing chamber having a processing space therein; and a substrate holding portion at The processing chamber holds the substrate; the gas supply unit supplies gas to the processing space; the exhaust unit discharges gas in the processing chamber; and the film forming processing unit is held in the substrate holding portion The surface of the substrate performs a film forming process; the input portion inputs a color information of the formed film; and the storage portion stores, for a plurality of colors, a color message and a film for forming the color. Corresponding data corresponding to film formation conditions; and a determination unit that determines the film formation condition by referring to the corresponding data based on the color information input from the input unit, and the film formation conditions include at least The gas supply amount is used as a film color adjustment element.

According to the film forming apparatus of the first embodiment of the present invention, the film forming apparatus of the second embodiment of the present invention is characterized in that the gas supply portion can supply a plurality of gases to the processing space, and the gas supply amount refers to a supply amount of at least one of the plurality of gases.

According to the film forming apparatus of the first or second embodiment of the present invention, the film forming apparatus according to the third embodiment of the present invention is characterized by further comprising: a determining unit that determines whether or not the color information input from the input unit is included And a notification unit that notifies the operator of the device that the color information is not included in the corresponding range.

The film forming apparatus according to any one of the first to third embodiments of the present invention is characterized in that the film forming apparatus according to the fourth embodiment of the present invention is characterized in that the film forming apparatus is based on the first correspondence relationship and the second correspondence relationship In the correspondence data, the first correspondence relationship is obtained by actually measuring optical constants of respective films formed under mutually different film forming conditions, and each film forming condition is made to correspond to each optical constant. The second correspondence relationship is obtained by theoretical calculation, and the optical constants are associated with the respective color information.

A film forming apparatus according to a fourth embodiment of the present invention is characterized in that the film forming apparatus according to the fifth embodiment of the present invention is characterized in that interpolation processing is performed on the first correspondence relationship, and the first correspondence relationship and the interpolation based on the interpolation processing The second correspondence is described to create the corresponding data.

A data creation method according to a sixth embodiment of the present invention includes a first correspondence relationship obtaining step of actually measuring optical constants of respective films formed under mutually different film formation conditions, and obtaining each film formation a first correspondence relationship between the conditions and the respective optical constants; a second correspondence obtaining step of obtaining a second correspondence relationship between the optical constants and the respective color information by theoretical calculation; and a manufacturing step based on Corresponding data corresponding to the film forming conditions of the film for forming the color, for the plurality of colors, in the first correspondence relationship and the second correspondence relationship, and in the film forming condition At least the gas supply amount is included as a film color adjustment element.

According to the data creation method of the sixth embodiment of the present invention, the data creation method of the seventh embodiment of the present invention is characterized in that the method further includes performing interpolation processing on the first correspondence relationship obtained by the first correspondence relationship obtaining step In the interpolation processing step, in the production step, the corresponding data is created based on the first correspondence relationship and the second correspondence relationship after the interpolation processing.

[Effects of the Invention] In the first embodiment of the present invention, the determination unit determines the film formation conditions by referring to the corresponding data based on the color information input from the input unit. Further, at least the gas supply amount is included as a film color adjustment element in the film formation conditions. Therefore, the first embodiment of the present invention can perform a film formation process of a desired film color with high precision and stability as compared with the embodiment in which the film formation conditions are adjusted according to the intuition or experience of the operator of the film forming apparatus.

In particular, in the fifth embodiment and the seventh embodiment of the present invention, the interpolation processing is performed on the first correspondence relationship in which each film formation condition is associated with each optical constant. Next, the corresponding data is created based on the first correspondence relationship after the interpolation process and the second correspondence relationship between the optical constants and the respective color information obtained by theoretical calculation. Since the interpolation processing is performed in the above-described manner, it is preferable to create the corresponding data with more variations than the actual number of samples actually measured by the optical constant.

In addition, the present inventors have found that when a film of a plurality of colors is obtained under film forming conditions in which gas supply amounts are different, there is a section in which a color message changes abruptly with respect to a gas supply amount, whereas optical The respective values of the constant change gently with respect to the gas supply amount.

In the fifth embodiment and the seventh embodiment of the present invention, the interpolation processing is performed on the first correspondence relationship in which the change is gentle, whereby less can be utilized than in the embodiment in which the interpolation processing is performed on the color information that changes sharply. The number of samples performs high-precision sampling. Next, corresponding data is created based on the first correspondence relationship after the interpolation processing and the second correspondence relationship obtained by theoretical calculation.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In the drawings, the same reference numerals are given to the parts having the same structures and functions, and the repeated description is omitted. Further, the following embodiments are examples in which the present invention is embodied, and are not intended to limit the technical scope of the present invention. In addition, in the drawings, the size or the number of each part is sometimes exaggerated or simplified for the sake of easy understanding. In addition, in the drawings, an XYZ orthogonal coordinate axis may be attached in order to explain the direction. The +Z direction in the coordinate axis is the vertical direction, and the XY plane is the horizontal plane.

<1 Embodiment> <1.1 Configuration of Sputtering Apparatus 1> FIG. 1 is a schematic cross-sectional view schematically showing a schematic configuration of a sputtering apparatus 1. FIG. 2 is a schematic cross-sectional view showing the sputtering treatment unit 50 and its surroundings. FIG. 3 is a side view showing an example of an inductive coupling antenna 151. 4 is a perspective view showing the sputtering treatment unit 50 and its periphery.

The sputtering apparatus 1 is a device in which a titanium nitride film (for example, a film of 100 nm or less) is sputtered on the upper surface of the substrate 91 to be conveyed. The base material 91 is made of, for example, a stainless steel (Steel Use Stainless, SUS) plate or the like. Further, the substrate 91 after the film formation treatment is used, for example, as a decorative material for an interior or an exterior of a building.

The sputtering apparatus 1 includes a chamber 100 (processing chamber), a conveying mechanism 30 that transports the substrate 91, and a sputtering processing unit 50 that performs a film forming process on the upper surface of the substrate 91 that is conveyed by sputtering, and a control unit. 190, overall control of each part of the sputtering apparatus 1. The chamber 100 is a hollow member having an outer shape of a rectangular parallelepiped shape. The chamber 100 is disposed such that its bottom plate and top plate are in a horizontal posture. Further, each of the X axis and the Y axis is an axis parallel to the side wall of the chamber 100.

The sputtering apparatus 1 further includes a cover 60 that is a cylindrical shield member that is disposed to surround the sputtering treatment portion 50. The cover 60 has a function as a shield for limiting the range of the plasma generated by the sputtering treatment unit 50 or a scattering range of the sputtered particles sputtered from the target, and the inside of the cover. Environment and external blocking environment blocking function. Hereinafter, a space in the inner space of the chamber 100 that is inside the outer cover 60 to perform the sputtering process is referred to as a processing space V.

In the chamber 100, the horizontal conveying path surface L is defined below the outer cover 60. The extending direction of the conveying path surface L is the X-axis direction, and the base material 91 is conveyed along the X-axis direction.

Further, the sputtering apparatus 1 includes a plate-shaped heating unit 40 that heats the substrate 91 conveyed in the chamber 100. The heating unit 40 is configured by, for example, a sheathed heater disposed on the lower side of the conveying path surface L.

A gate 160 for carrying the substrate 91 into the chamber 100 is provided at an end of the chamber 100 on the -X side of the transport path surface L. On the other hand, in the end portion of the chamber 100 on the +X side of the transport path surface L, a shutter 161 for carrying the substrate 91 out of the chamber 100 is provided. Further, at both end portions of the chamber 100 in the X direction, an opening portion of another chamber such as a load lock chamber or an unload lock chamber can be connected in a gas-tight manner. Each of the gates 160, 161 can be switched between open and closed.

Further, the chamber 100 is connected to an exhaust portion 170 that discharges the gas in the chamber 100. The exhaust unit 170 includes, for example, a vacuum pump, an exhaust pipe, and an exhaust valve, each of which is omitted. One end of the exhaust pipe is connected to the vacuum pump, and the other end is connected to the internal space of the chamber 100 in communication. Further, the exhaust valve is provided in the middle of the path of the exhaust pipe. Specifically, the exhaust valve is a valve that can automatically adjust the flow rate of the gas flowing through the exhaust pipe. With the above configuration, when the exhaust valve is opened in a state where the vacuum pump has been operated, the gas in the chamber 100 is discharged, and the inside of the chamber 100 is in a vacuum state. The control unit 190 controls the exhaust gas by the exhaust unit 170, thereby adjusting the pressure in the chamber 100 to a specific value.

In the inside of the chamber 100, the transport mechanism 30 includes a plurality of pairs of transport rollers 31 that are disposed to face each other across the transport path surface L in the Y direction, and a drive unit that is rotationally driven in synchronization with the plurality of transport rollers 31 (Fig. Show omitted). A plurality of pairs of conveying rollers 31 are provided along the extending direction of the conveying path surface L, that is, in the X direction. Further, in Fig. 1, five rollers of the five pairs of conveying rollers 31 on the near side (-Y side) of the drawing are depicted.

The carrier 90 is constituted by a plate-like tray or the like, and the substrate 91 is detachably held on a substantially horizontal upper surface of the carrier 90. Further, in the embodiment of holding the substrate 91 on the carrier 90, an embodiment in which the substrate 91 is held by a vacuum suction method or a method of mechanically grasping the substrate 91 by a chuck pin or the like can be employed. Various embodiments such as methods.

After the carrier 90 on which the substrate 91 is placed is introduced into the chamber 100 via the shutter 160, each of the transport rollers 31 abuts from the lower side to the vicinity of the end edge (the edge on the ±Y side) of the carrier 90. Then, the transport rollers 31 are synchronously rotated by the drive unit (not shown), whereby the carrier 90 and the substrate 91 held by the carrier 90 are transported along the transport path surface L. In the present embodiment, an embodiment has been described in which each of the transport rollers 31 is rotatable in both the clockwise direction and the counterclockwise direction, and the carrier 90 is transported in two directions (±X direction) and held in the carrier. 90 substrate 90. The conveyance path surface L includes a film formation portion P that faces the sputtering treatment portion 50 (film formation processing portion). Therefore, the film formation process is performed on the upper surface of the base material 91 conveyed by the conveyance mechanism 30 at the location|region which the film formation site P is comprised.

The sputtering apparatus 1 includes a sputtering gas supply unit 510 that supplies a sputtering gas such as argon gas as an inert gas to the processing space V, and a reactive gas supply unit 520 that supplies a reactive gas such as nitrogen gas to the processing space V. Therefore, when both the sputtering gas supply unit 510 and the reactive gas supply unit 520 are supplied with a gas, first, a mixed environment of the sputtering gas and the reactive gas is formed in the processing space V, and as time passes, The mixing environment is formed throughout the interior space of the chamber 100.

Specifically, the sputtering gas supply unit 510 includes, for example, a sputtering gas supply source 511 and a pipe 512 as a supply source of the sputtering gas. One end of the pipe 512 is connected to the sputtering gas supply source 511, and the other end is connected to each nozzle 514 that communicates with the processing space V. Further, a valve 513 is provided in the middle of the path of the pipe 512. The valve 513 adjusts the amount of the sputtering gas supplied to the processing space V under the control of the control unit 190. The valve 513 is preferably a valve capable of automatically adjusting the flow rate of the gas flowing through the pipe, and specifically, for example, preferably includes a mass flow controller or the like.

Each of the nozzles 514 is disposed on the ±X side of one column of the inductive coupling antenna 151, and penetrates through the top plate of the chamber 100 to form an opening to the lower side, and the column of inductive coupling antennas 151 are disposed between the rotating cathodes 5, 6. Therefore, the sputtering gas supplied from the sputtering gas supply source 511 is introduced into the processing space V from each of the nozzles 514.

Specifically, the reactive gas supply unit 520 includes, for example, a reactive gas supply source 521 and a pipe 522 as a supply source of the reactive gas. One end of the pipe 522 is connected to the reactive gas supply source 521, and the other end is branched into a plurality (six in the example of FIG. 4) so as to be connected to the plurality of nozzles 12 disposed in the processing space V (in FIG. 4 In the example, three on the +X side and three on the -X side total six nozzles 12). A valve 523 is provided in the middle of the path of the pipe 522. The valve 523 adjusts the amount of the reactive gas supplied to the processing space V under the control of the control unit 190.

Each of the nozzles 12 is provided to extend in the Y direction in a region below the processing space V. The other end of each of the pipes 522 is connected to each of the outer end faces of the nozzles 12 in the X direction. Each of the nozzles 12 is formed with a flow path that is formed in each of the end faces and connected to the other end of the pipe 522, and is branched into a plurality of inside the nozzle. The front end of each flow path reaches the inner end surface of the nozzle 12 in the X-direction end faces to form an opening, and a plurality of discharge ports 11 are formed in each of the end faces.

An optical fiber probe 13 is disposed above each nozzle 12 on the +X side. In addition, a spectroscope 14 is provided, which is capable of measuring the spectral intensity of plasma emission incident on the probe 13. The spectroscope 14 is electrically connected to the control unit 190, and the measured value of the spectroscope 14 is supplied to the control unit 190. The control unit 190 controls the valve 523 by a plasma emission monitoring (PEM) method based on the output of the spectroscope 14, thereby controlling the reactive gas supplied from the reactive gas supply unit 520 to the chamber 100. The amount of import. The valve 523 is preferably a valve capable of automatically adjusting the flow rate of the gas flowing through the pipe, and for example, preferably includes a mass flow controller or the like.

Each component included in the sputtering apparatus 1 is electrically connected to the control unit 190, and each of the components is controlled by the control unit 190. Specifically, the control unit 190 is configured by, for example, a general factory automation (FA) computer, which is a central processing unit (CPU) that performs various arithmetic processing and stores. Read Only Memory (ROM) such as a program, a random access memory (RAM) as a work area for arithmetic processing, a stored program, or various data files. A hard disk or a data communication unit having a function of performing data communication via a local area network (LAN) or the like is connected to each other by a bus line or the like. Further, the control unit 190 is connected to the input unit 191, which is composed of a display, a keyboard, a mouse, and the like for performing various displays. The input unit 191 is used, for example, when the device operator specifies and inputs a color message of the formed film.

The sputtering treatment portion 50 includes: two rotating cathodes 5, 6; two rotating portions 19 that rotate the two rotating cathodes 5, 6 about respective central axes; the two magnet units 21, 22 are respectively housed in two rotations The inside of the cathodes 5, 6 and the power source 163 for sputtering supply the sputtering power to the two rotating cathodes 5, 6, respectively.

The rotating cathodes 5 and 6 are arranged in a pair in the processing space V so as to face each other at a fixed distance along the X direction. By rotating the cathodes 5 and 6 side by side in the above-described manner, radicals are more concentrated on the film formation site P on the substrate 91, and the film quality of the film obtained by the sputtering treatment is improved.

The sputtering processing unit 50 further includes: an array of inductive coupling antennas 151 disposed between the rotating cathodes 5, 6; a matching circuit 154; and a high frequency power source 153 for supplying high frequency power to the respective inductors via the matching circuit 154 The antenna 151 is coupled.

Here, the in-line inductively coupled antenna 151 refers to five inductive coupling antennas 151 that are provided at intervals in the Y direction.

Therefore, the high-frequency power source 153 supplies high-frequency power (for example, electric power having a frequency of 13.56 MHz) to each of the inductive coupling antennas 151, whereby the inductive coupling antennas 151 provided inside the casing 60 generate inductive coupling in the processing space V. Inductively coupled plasma.

Each of the inductive coupling antennas 151 is covered by a protective member 152 including a dielectric material such as quartz glass, and is provided to protrude into the inner space of the chamber 100 through the top plate of the chamber 100.

For example, as shown in FIG. 3, each of the inductive coupling antennas 151 is formed by bending a metal tubular conductor into a U shape, and is protruded from the chamber 100 by a top plate of the chamber 100 in a "U" state. Internal space. The cooling water is circulated inside the inductive coupling antenna 151 or the like to appropriately cool the inductive coupling antenna 151.

One end of each of the inductive coupling antennas 151 is electrically connected to the high frequency power source 153 via a matching circuit 154. In addition, the other end of each inductive coupling antenna 151 is grounded. In the above configuration, after the high-frequency power is supplied from the high-frequency power source 153 to the inductive coupling antenna 151, a high-frequency induced magnetic field is generated around the inductive coupling antenna 151, and an inductively coupled plasma is generated in the internal space of the chamber 100 (Inductively Coupled Plasma: ICP). The inductively coupled plasma is a high density plasma having an electron space density of 3 × 10 ¹⁰ /cm ³ or more.

Further, the U-shaped inductive coupling antenna 151 as in the present embodiment corresponds to an inductive coupling antenna having less than one turn, and the inductance is lower than the inductance of the inductive coupling antenna having one or more turns. Therefore, the high-frequency voltage generated at both ends of the inductive coupling antenna 151 is reduced, and the high-frequency fluctuation of the plasma potential caused by the electrostatic coupling with the generated plasma is suppressed. Therefore, as the excess electron loss caused by the fluctuation of the plasma potential to the earth potential is reduced, the plasma potential is suppressed to be extremely low. Thereby, damage caused on the substrate 91 can be reduced.

The magnet unit 21 (22) forms a magnetic field (static magnetic field) in the vicinity of the outer peripheral surface of the rotating cathode 5 (6). An array of inductively coupled antennas 151 disposed between the rotating cathodes 5, 6 generates inductively coupled plasma in a space in the processing space V that includes a portion where the magnetic fields are formed by the magnet units 21, 22.

The rotating cathode 5 (6) includes a cylindrical base member 8 extending in the horizontal direction in the Y direction perpendicular to the conveying direction, and a cylindrical target 16 covering the outer periphery of the base member 8. The base member 8 is a conductor, and a material containing titanium (Ti) for titanium nitride film formation can be used as the material of the target 16. Further, the rotating cathode 5 (6) may be configured by the cylindrical target 16 without including the base member 8. The target 16 is formed, for example, by a method of compression-molding a powder of a target material into a cylindrical shape, and then inserting the base member 8.

In the present specification, when the rotating cathodes 5 and 6 disposed side by side and the magnet units 21 and 22 disposed inside the respective rotating cathodes are integrally formed, they are referred to as magnetron cathode pairs.

Both end portions of the base member 8 in the central axis 2 (3) direction are respectively closed by a lid portion, and the lid portion is provided with a circular opening at the center portion. The length of the rotating cathode 5 (6) in the direction of the central axis 2 (3) is set, for example, to 1,400 mm, and the diameter is set to, for example, 150 mm.

The sputtering treatment portion 50 further includes two pairs of sealed bearings 9, 10 and two cylindrical support rods 7. Each pair of sealed bearings 9 and 10 is provided in the longitudinal direction (Y direction) of the rotating cathode 5 (6) via the rotating cathode 5 (6). Each of the sealed bearings 9 and 10 includes a land portion that is erected from the lower surface of the top plate of the chamber 100 and a substantially cylindrical cylindrical portion that is provided at a lower portion of the table portion.

One end of each of the support rods 7 is supported by the cylindrical portion of the sealed bearing 9, and the other end is supported by the cylindrical portion of the sealed bearing 10. Each of the support rods 7 is inserted into the rotary cathode 5 (6) from the opening of the cover portion at one end of the base member 8, and penetrates the rotary cathode 5 (6) along the central axis 2 (3), and from the other end of the base member 8 The opening of the cover protrudes beyond the rotating cathode 5 (6).

The magnet unit 21 (22) includes a yoke 25 (support plate) made of a magnetic material such as magnetic conductive steel, and a plurality of magnets (a central magnet 23a and a peripheral magnet 23b which will be described later) provided on the yoke 25.

The yoke 25 is a flat member that extends in the longitudinal direction (Y direction) of the rotary cathode 5 so as to face the inner peripheral surface of the rotary cathode 5 (6). The central magnet 23a extending along the longitudinal direction of the yoke 25 is disposed on the center line along the longitudinal direction of the yoke 25 on the surface of the yoke 25 facing the inner peripheral surface of the rotary cathodes 5, 6. An annular (endless) peripheral magnet 23b surrounding the center magnet 23a is provided on the outer edge of the surface of the yoke 25. The center magnet 23a and the peripheral magnet 23b are made of, for example, a permanent magnet.

The polarities of the center magnet 23a and the peripheral magnet 23b on the side of the target 16 are different from each other. In addition, each of the two magnet units 21, 22 is complementary in polarity. For example, in the magnet unit 21, the polarity of the central magnet 23a on the target 16 side is N pole, the polarity of the peripheral magnet 23b is S pole, and the magnet unit 22 is on the target 16 side. The polarity of the central magnet 23a is set to the S pole, and the polarity of the peripheral magnet 23b is set to the N pole.

One end of the fixing member 27 is joined to the back surface of the yoke 25. The other end of the fixing member 27 is joined to the support rod 7. Thereby, the magnet units 21 and 22 are connected to the support rod 7. In the present embodiment, the magnet units 21 and 22 constituting the pair of magnetron cathodes are fixed in a state of being rotated by a predetermined angle from the position facing each other toward the -Z direction of the film formation portion P. Therefore, a relatively strong static magnetic field is formed by the magnet units 21, 22 in the space between the rotating cathodes 5, 6 and on the side of the film formation portion P.

A rotating portion 19 is provided at a table portion of each of the sealed bearings 9, and the rotating portion 19 includes a gear that rotates a motor and a transmission motor (not shown). Further, around the opening of the lid portion on the +Y side of the base member 8 of the rotary cathodes 5 and 6, a gear (not shown) that meshes with the gear of each of the rotating portions 19 is provided.

Each of the rotating portions 19 rotates the rotating cathode 5 (6) about the central axis 2 (3) by the rotation of the motor. More specifically, the rotating portion 19 is such that the portions facing each other in the outer peripheral surfaces of the rotary cathodes 5, 6 are moved from the lower side to the upper side, respectively, and the rotating cathodes 5, 6 are surrounded by the central axes 2, 3, respectively. Rotate in the opposite direction. The rotation speed is set, for example, from 10 rpm to 20 rpm, and is rotated at a constant speed in the rotation speed and the rotation direction during the sputtering process. Further, the cooling water is circulated inside the rotating cathodes 5, 6 via the sealed bearing 10 and the support rod 7, and the rotating cathodes 5, 6 are appropriately cooled.

The electric wires connected to the sputtering power source 163 are branched into two, and then guided to the respective sealed bearings 10 of the rotary cathodes 5 and 6. At the tip end of each electric wire, a brush that is in contact with the lid portion on the -Y side of the base member 8 of the rotary cathodes 5, 6 is provided. The sputtering power source 163 supplies the sputtering power to the base member 8 via the brush. In the present embodiment, the sputtering power source 163 supplies DC power of a negative potential to the rotating cathodes 5, 6. Further, for example, the sputtering power supply 163 may be configured to supply alternating current sputtering power having opposite phases to the rotating cathodes 5 and 6, or the sputtering power supply 163 may include a pulsed negative potential and a positive potential. An embodiment in which power is supplied to the rotating cathodes 5, 6.

After the sputtering power is supplied to each of the base members 8 (and further supplied to the respective targets 16), a plasma of a sputtering gas is generated on the surface of each of the targets 16 of the processing space V. The static magnetic field formed by the plasma by the magnet units 21 and 22 is between the rotating cathodes 5 and 6, and is densely sealed in the space on the side of the film formation site P. In the present specification, the plasma which is densified by the magnetic field sealing effect in the manner described above is referred to as a magnetron plasma. In the embodiment in which the magnetron cathode generates the magnetron plasma as in the present embodiment, the plasma is more dense than in the case where one magnetron cathode generates the magnetron. Therefore, the embodiment of the present embodiment is preferable from the viewpoint of increasing the film formation rate.

As described above, an array of inductively coupled antennas 151 disposed between the rotating cathodes 5, 6 generates inductively coupled plasma in a space in the processing space V including a portion where the magnetic fields are formed by the magnet units 21, 22. As a result, the magnetron plasma generated by the magnetron cathode pair and the inductive coupling plasma generated by the inductive coupling antenna 151 coincide with each other, thereby forming a mixed plasma. The high-density inductively coupled plasma produced by the inductively coupled antenna 151 also acts on the sputtering of the target 16 with the magnetron plasma, which is magnetized by the magnet units 21, 22 at the rotating cathodes 5, 6. A magnetic field formed near the outer peripheral surface is generated.

In the case where the inductively coupled plasma is applied to the sputtering in the above manner, even if the magnitude of the sputtering power supplied to the rotating cathodes 5, 6 is the same as in the case where the inductively coupled plasma does not function, it can be lowered. Sputter voltage (can reduce impedance). Thereby, the rebound argon ions or negative ions flying out from the target 16 are less damaged by the film formation surface of the substrate 91, and the film formation process is performed at a high film formation rate.

In the sputtering process, argon gas is used as a sputtering gas, and nitrogen gas is introduced as a reactive gas into the processing space V of the chamber 100, and the rotating cathode 5, 6 is sputter-coated in the environment of the mixed plasma. The titanium target 16 on the outer periphery forms a titanium nitride film on the substrate 91 facing the target 16.

<1.2 Processing Example><1.2.1 Process for Creating Corresponding Data> FIG. 5 is a view showing a flow of a process of creating corresponding data. FIG. 6 is a diagram showing an example of correspondence data. In Fig. 6, the horizontal axis represents the ratio of nitrogen in the mixed gas of argon gas and nitrogen gas, and the vertical axis on the left side of the figure represents the a ^* b ^* value of the L ^* a ^* b ^* color system, which is shown on the right side. The vertical axis represents the L ^* value of the L ^* a ^* b ^* color system.

First, the production processing of the corresponding data is executed. Here, the corresponding data is data in which a pointer corresponds to a plurality of colors such that a color message (for example, a color specified in the L ^* a ^* b ^* color system) corresponds to a film forming condition of a film for forming the color. . In the present embodiment, the case where the argon gas supply amount is fixed, the nitrogen gas supply amount is variable, and the nitrogen gas supply amount is used as the film color adjustment element will be described.

First, the operator of the apparatus inputs various film forming conditions from the input unit 191 (step ST1). In the following, an embodiment will be described in which the operator instructs the input of the film color adjustment element (nitrogen supply amount) in the film formation conditions and the film thickness of the film to be formed, and the other elements in the film formation conditions ( For example, a sputtering voltage value, a high-frequency power value, a pressure value in a chamber, and the like, and automatically specify a predetermined reference value. Here, in the present embodiment, since the argon supply amount is fixed, the input nitrogen supply amount is equivalent to the ratio of the nitrogen in the mixed gas of the specified argon gas and nitrogen gas.

Next, a sputtering process is performed under the film forming conditions specified in step ST1 (step ST2).

First, a mixed environment of a predetermined nitrogen ratio is formed in the processing space V by the sputtering gas supply unit 510 and the reactive gas supply unit 520. The high frequency power is supplied to each of the inductive coupling antennas 151 disposed between the rotating cathodes 5, 6 by the high frequency power source 153. Thereby, inductively coupled plasma is generated in the processing space V. Further, after the inductively coupled plasma is generated in the processing space V, the exhaust portion 170 exhausts the gas in the chamber 100 until a process pressure suitable for plasma treatment in the chamber 100 is reached. After the pressure in the chamber 100 reaches the process pressure, the sputtering power is supplied to the rotating cathodes 5, 6 through the sputtering power source 163. Thereby, a magnetron plasma is generated at the center position of the processing space V in the Y direction. As a result, in the central position of the processing space V in the Y direction (specifically, between the rotating cathodes 5, 6 and on the side of the film forming portion P side), a mixed plasma of magnetron plasma and inductively coupled plasma is formed. .

In the above state, the transport mechanism 30 carries the substrate 91 from the shutter 160 and transports the substrate 91 along the transport path surface L. More specifically, the conveyance mechanism 30 moves the base material 91 in the ±X direction along the conveyance path surface L so that the base material 91 passes through the film formation site P a plurality of times. Further, the heating unit 40 heats the substrate 91 to be conveyed. As a result, the titanium nitride particles sputtered from the target 16 of the rotating cathodes 5 and 6 are crystallized and deposited on the upper surface of the substrate 91 to be conveyed to form a titanium nitride film.

Then, after a predetermined processing time has elapsed and the film thickness of the formed film reaches the film thickness input from the input portion 191, the sputtering process is completed. Specifically, the sputtering power source 163 stops applying a sputtering voltage to the rotating cathodes 5 and 6. The sputtering gas supply source 511 stops supplying the sputtering gas. Further, the reactive gas supply source 521 stops supplying the reactive gas. Further, the high-frequency power source 153 stops supplying high-frequency power to each of the inductive coupling antennas 151. Next, the conveyance mechanism 30 carries out the film-formed substrate 91 from the shutter 161 to the outside of the sputtering apparatus 1.

After the completion of the sputtering process, the operator actually measures the optical constant of the formed film using a measuring instrument such as an ellipsometry (first correspondence obtaining step: step ST3). Thereby, the refractive index n and the extinction coefficient k of the film were obtained.

7 is a view showing a relationship between a nitrogen gas ratio at the time of a sputtering process and a spectrum of a refractive index n. In FIG. 7, the horizontal axis represents the wavelength and the vertical axis represents the refractive index n. 8 is a view showing a relationship between a nitrogen gas ratio at the time of a sputtering process and a spectrum of an extinction coefficient k. In Fig. 8, the horizontal axis represents the wavelength and the vertical axis represents the extinction coefficient k. In the following, as shown in FIG. 7 and FIG. 8 , the relationship between each film formation condition (the nitrogen gas ratio in the present embodiment) and each optical constant is referred to as a first correspondence relationship.

Further, the operator actually measures the color information of the formed film using a colorimeter (step ST4). Thus, a color film message (e.g. L ^* a ^* b ^* color system of L ^* value, a ^* value and b ^* value).

As described above, by performing steps ST1 to ST4 once, a first correspondence relationship (a spectrum of the refractive index n) relating to a film obtained by performing a sputtering treatment at a specific nitrogen ratio (for example, 10%) is obtained. The spectrum of the extinction coefficient k and the corresponding data (each value of L ^* a ^* b ^* ).

Therefore, branching to "No" in step ST5, and under different nitrogen ratios (for example, 10%, 15%, 18%, 19%, 20%, 30%, 40%), respectively Steps ST1 to ST4 are performed a plurality of times, thereby obtaining a first correspondence relationship (FIG. 7 and FIG. 8) and corresponding data (FIG. 6) related to each film obtained by performing sputtering treatment on the plurality of nitrogen ratios. .

Steps ST1 to ST4 are performed a plurality of times at a plurality of nitrogen ratios, thereby obtaining the desired actual measurement sample number, and then branching to "Yes" in step ST5.

Next, interpolation processing is performed on the first correspondence relationship obtained by the plurality of steps ST3 (interpolation processing step: step ST6). For example, various processing such as spline interpolation processing can be applied as the interpolation processing. Thereby, the first correspondence can be obtained by prediction for the nitrogen ratio and the optical constant which are not actually measured.

In the following step ST7, a second correspondence relationship in which each optical constant is associated with each color message is used. Hereinafter, the flow for obtaining the second correspondence relationship (the second correspondence relationship obtaining step) will be described with reference to each of the numerical formulas of Equations 1 to 18. Further, in each of the formulae, the subscript "0" means air, the subscript "1" means the formed film, and the subscript "2" means the substrate 91. In addition, the subscript "p" refers to p-polarized light, and the subscript "s" refers to s polarized light.

When the complex refractive index is N, an optical constant (refractive index n and extinction coefficient k) and an imaginary number i are used, and the following formula 1 holds.

[Expression 1]

Further, when the incident angle in each layer is θ, the following Equation 2 holds according to Snell's law.

[Formula 2]

At this time, if the phase change is β, the following Equation 3 holds.

[Expression 3]

Next, when the amplitude reflection coefficient is r, the amplitude transmission coefficient is t, the reflectance is R, and the film thickness of the formed film is d, according to the Fresnel formula, The following Formula 4 to Formula 9 are established.

[Expression 4]

[Expression 5]

[Expression 6]

[Expression 7]

[Expression 8]

[Expression 9]

Fig. 9 is a graph showing the relationship between the nitrogen gas ratio and the reflectance spectrum at the time of the sputtering treatment. In FIG. 9, the horizontal axis represents the wavelength and the vertical axis represents the reflectance R.

In addition, if the reflectance distribution is set to S(λ) and the color-matching function in the XYZ color system is set to x(λ), y(λ), z(λ), the following Equations 10 to 13 are established.

[Expression 10]

[Expression 11]

[Expression 12]

[Expression 13]

Here, when the color is converted from the XYZ color system to the L ^* a ^* b ^* color system, the following Equations 14 to 18 are established.

[Expression 14]

[Expression 15]

[Expression 16]

[Expression 17]

[Expression 18]

As described above, the second correspondence of the optical constant and the color information one by one is obtained by theoretical calculation.

Then, based on the first correspondence relationship and the second correspondence relationship after the interpolation processing, film formation is performed to make a color message (for example, a color specified in the L ^* a ^* b ^* color system) and a film for forming the color. Corresponding data (conditions: step ST7) corresponding to the condition (in the present embodiment, the nitrogen supply rate). The created correspondence data is stored in the storage unit of the control unit 190.

In the present embodiment, since the interpolation processing is executed in step ST6, the corresponding data is created with more changes than the actual number of samples actually measured for the optical constant. Therefore, in the <1.2.2 sputtering process using the corresponding data described later>, the selectable color designation range is increased, which is preferable.

Further, in the present embodiment, the interpolation processing is not performed on the color information (FIG. 6) of the film under a plurality of nitrogen supply rates, but the first correspondence relationship among the plurality of nitrogen supply rates (FIG. 7, FIG. 8). Perform interpolation processing.

Here, as is clear from FIG. 6, there is a section in which the color information changes abruptly with respect to the nitrogen gas supply rate. Specifically, in the interval where the nitrogen supply rate is 16% to 20%, the respective values of L ^* a ^* b ^* change abruptly. On the other hand, it can be seen from FIGS. 7 and 8 that the respective values of the optical constants change gently with respect to the nitrogen supply rate. Specifically, as the nitrogen supply rate increases, the peak indicating the lower limit of the refractive index n and the extinction coefficient k is gently shifted toward the long wavelength side.

In the present embodiment, the interpolation processing is performed on the first correspondence having a gentle change in the above-described manner, whereby the execution can be performed with a smaller number of samples than in the embodiment in which the interpolation processing is performed on the color information that changes sharply. Sampling of precision. Next, in step ST7, correspondence data is created based on the first correspondence relationship after the interpolation processing and the second correspondence relationship obtained by theoretical calculation.

As described above, in the present embodiment, since the correspondence data is created based on the first correspondence relationship obtained in step ST3, the step of actually measuring the color message in step ST4 is not required. Here, if the actual color information is previously measured in step ST4, the color information can be utilized when the accuracy of the created corresponding data is confirmed, or when the corresponding data is appropriately corrected.

<1.2.2 Sputtering Process Using Corresponding Data> FIG. 10 is a view showing a flow of a sputtering process using corresponding data.

After the corresponding data is created, the operator of the apparatus can specify the film color from the input unit 191 in the sputtering process. Specifically, the operator inputs a color message (for example, each value of L ^* a ^* b ^* ) and a film thickness to the input unit 191 (step ST11).

The control unit 190 determines whether or not the color information input from the input unit is included in the corresponding range of the corresponding data (step ST12). Here, in the case where the color message is included in the corresponding range of the corresponding data, the following two cases are included, and in one case, there is a film forming condition of the film which can form a color completely identical to the input color information in the corresponding data. In another case, in the corresponding data, there is a film forming condition of a film which is capable of forming a deviation between the color and the input color information in an allowable range.

Then, when the input color message is included in the corresponding range of the corresponding data, the process branches to YES in step ST12, and the control unit 190 determines the use of the color information based on the color information input from the input unit 191 by referring to the corresponding data. The film formation conditions of the film of the color are formed by the sputtering apparatus 1 (step ST13). Then, the same sputtering process as that described in the description of step ST2 is performed (step ST14).

On the other hand, if the input color information is not included in the corresponding range of the corresponding data, the process branches to "NO" in step ST12, and the control unit 190 displays the display on the display or issues a warning sound or the like. The operator of the device is informed (step ST15).

In addition to the function of controlling each part of the apparatus, the control unit 190 has a function as a determination unit that determines whether or not a film of the input color can be formed, a function as a determination unit that determines a film formation condition, and As a function of the notification unit, the notification unit notifies the operator of the fact that the film of the input color cannot be formed.

In the present embodiment, the film formation conditions are determined with reference to the corresponding data in which the color information is associated with the film formation conditions. Therefore, the embodiment of the present embodiment can perform the film formation process of the desired film color with high precision and stability as compared with other embodiments in which the color corresponds to the film formation conditions according to the operator's intuition or experience.

Further, in the present embodiment, in the case where the input color information is not included in the corresponding range of the corresponding data, the situation is promptly notified to the operator. Therefore, it is preferable to omit the time or effort taken by the operator to perform trial and error on the color in which the current corresponding data cannot be formed.

Further, in this case, the operator of the apparatus changes each of the elements other than the nitrogen supply rate as the film color adjustment element in the film formation conditions (for example, the sputtering voltage value, the high frequency power value, and the pressure value in the chamber). The processing of steps ST1 to ST7 may be performed. As a result, since the amount of data is expanded after the corresponding data is updated, the updated corresponding data can be used to form a color that cannot be formed by the corresponding data at the previous time point.

<2 Modifications> The embodiments of the present invention have been described above, but the present invention can be variously modified without departing from the spirit and scope of the invention.

Further, in the above-described embodiment, the embodiment in which the sputtering apparatus 1 is used as the film forming apparatus has been described, but the invention is not limited thereto. The present invention can also be applied to other film forming apparatuses (e.g., vapor deposition apparatuses, etc.).

Further, in the above-described embodiment, the case where only the supply amount of nitrogen gas in the supply gas (argon gas and nitrogen gas) is used as the film color adjustment element has been described. It is known that, in general, the kind of gas supplied at the time of film formation processing or the supply amount thereof is a main film color adjustment element. Therefore, the present invention can be applied as long as it contains at least a gas supply amount as a film color adjustment element. In addition, from the viewpoint of performing more precise film color adjustment, each element other than the gas supply amount (for example, a sputtering voltage value, a high-frequency power value, a pressure value in a chamber, or the like) may be used as a film color adjustment element. .

In addition, when a plurality of gases can be supplied to the processing space V in the gas supply unit (the sputtering gas supply unit 510 and the reactive gas supply unit 520), at least one of the film forming conditions is included as in the above embodiment. The supply amount of gas can be applied to the present invention as a film color adjustment element.

Further, in the above-described embodiment, the case where the color information input to the input unit 191 is a color message in the L ^* a ^* b ^* color system has been described, but the present invention is not limited thereto. The color information input to the input unit 191 may also be a color message in a color system other than the L ^* a ^* b ^* color system such as the XYZ color system.

Further, in the above-described embodiment, an embodiment in which corresponding data is created in the sputtering apparatus 1 as a film forming apparatus has been described. However, corresponding data may be created in a device different from the film forming apparatus.

In the above-described embodiment, the embodiment in which the transport mechanism 30 that holds and transports the substrate 91 is used as the substrate holding portion has been described. However, the substrate holding portion that holds the substrate 91 in a stationary state may be used. In addition, the direction in which the conveyance mechanism 30 conveys the base material 91 may be a vertical direction, for example, in addition to the case of the horizontal direction as in the above-described embodiment.

Further, in the above-described embodiment, an embodiment in which each of the inductive coupling antennas 151 is provided to protrude into the inner space of the chamber 100 through the top plate of the chamber 100 has been described, but the invention is not limited thereto. Each of the inductive coupling antennas 151 may be protruded from the inner space of the chamber 100 through a side wall or a bottom plate of the chamber 100 or the like. In addition, it is also possible to provide an embodiment in which each of the inductive coupling antennas 151 is buried into the inner wall (top plate, side wall, or bottom plate) of the chamber 100 without protruding to the inner space of the chamber 100.

Further, in the above embodiment, the case where the two rotating cathodes 5, 6 are provided side by side has been described, but the number of the rotating cathodes may be one. Further, a flat-plate shaped anode may be used without using a rotating cathode.

Further, in the above-described embodiment, the case where the number of the inductive coupling antennas 151 constituting one row is five has been described. However, the number of the inductive coupling antennas 151 may be appropriately changed according to the length of the rotating cathode 5 (6). . In addition, a multi-column inductive coupling antenna 151 may be provided. In addition, design items such as the position, number, and length of each part can be appropriately changed.

Further, in the above-described embodiment, the embodiment in which the film formation process is performed on the upper surface of the substrate 91 to be conveyed has been described, but the invention is not limited thereto. For example, the film formation process may be performed on the other surface (side surface or lower surface, etc.) of the surface of the substrate 91 to be conveyed, or may be simultaneously applied to a plurality of faces (for example, the upper surface and the lower surface) of the surface of the substrate 91 to be conveyed. ) Film formation treatment is carried out.

Although the film forming apparatus and the data manufacturing method of the embodiment and its modifications have been described above, these examples are examples of preferred embodiments of the present invention and do not limit the scope of the present invention. The present invention can be freely combined with the respective embodiments, or the arbitrary constituent elements of the respective embodiments can be modified within the scope of the invention, or any constituent elements can be added or subtracted in the respective embodiments.

1‧‧‧Sputtering device
2, 3‧‧‧ central axis
5,6‧‧‧Rotating cathode
7‧‧‧Support rod
8‧‧‧Base member
9, 10‧‧‧ Sealed bearings
11‧‧‧Spray outlet
12,514‧‧‧ nozzle
13‧‧‧ Probe
14‧‧‧ Spectroscope
16‧‧‧ Target
19‧‧‧Rotating Department
21, 22‧‧‧ magnet unit
23a‧‧‧Central Magnet
23b‧‧‧ Peripheral magnet
25‧‧‧Y yoke
27‧‧‧Fixed components
30‧‧‧Transportation agency
31‧‧‧Transport roller
40‧‧‧heating department
50‧‧‧Spray processing department
60‧‧‧ Cover
90‧‧‧ Carrier
91‧‧‧Substrate
100‧‧‧ chamber
151‧‧‧Inductively coupled antenna
152‧‧‧protective components
153‧‧‧High frequency power supply
154‧‧‧Matching circuit
160, 161‧‧ ‧ gate
163‧‧‧Power supply for sputtering
170‧‧‧Exhaust Department
190‧‧‧Control Department
191‧‧‧ Input Department
510‧‧‧Sputter gas supply department
511‧‧‧Sputter gas supply
512, 522‧‧‧ piping
513, 523‧‧‧ valve
520‧‧‧Reactive Gas Supply Department
521‧‧‧Reactive gas supply
L‧‧‧Transport path
P‧‧‧filmed parts
ST1~ST7, ST11~ST15‧‧‧ steps
V‧‧‧ processing space
X, Y, Z‧‧ Direction

Fig. 1 is a schematic cross-sectional view schematically showing a configuration of a sputtering apparatus. Fig. 2 is a schematic cross-sectional view showing a sputtering treatment unit and its surroundings. Fig. 3 is a side view showing an example of an inductive coupling antenna. 4 is a perspective view showing a sputtering treatment unit and its surroundings. FIG. 5 is a view showing a flow of a process of creating corresponding data. FIG. 6 is a diagram showing an example of correspondence data. 7 is a view showing a relationship between a nitrogen gas ratio at the time of a sputtering process and a spectrum of a refractive index. 8 is a view showing a relationship between a nitrogen gas ratio at the time of a sputtering process and a spectrum of an extinction coefficient. Fig. 9 is a graph showing the relationship between the nitrogen gas ratio and the reflectance spectrum at the time of the sputtering treatment. FIG. 10 is a view showing a flow of a sputtering process using corresponding data.

Claims (7)

A film forming apparatus which is a film forming apparatus for forming a film on a surface of a substrate, comprising: a processing chamber having a processing space therein; a substrate holding portion holding the substrate in the processing chamber; a gas supply a gas supplied to the processing space; an exhaust portion that discharges a gas in the processing chamber; and a film forming processing portion that performs a film forming process on the surface of the substrate held by the substrate holding portion And an input unit that inputs a color information of the formed film; and a storage unit stores, for a plurality of colors, corresponding data corresponding to a film forming condition of the film for forming the color; and determining The film forming condition is determined by referring to the corresponding data based on the color information input from the input unit, and the film forming condition includes at least a gas supply amount as a film color adjusting element. The film forming apparatus of claim 1, wherein the gas supply portion is capable of supplying a plurality of gases to the processing space, and the gas supply amount refers to a supply of at least one of the plurality of gases the amount. The film forming apparatus according to claim 1 or 2, further comprising: a determining unit that determines whether the color information input from the input unit is included in a corresponding range of the corresponding data; The notifying unit notifies the operator of the device that the color information is not included in the corresponding range. The film forming apparatus of claim 1 or 2, wherein the corresponding data is created based on a first correspondence relationship and a second correspondence relationship, the first correspondence relationship being different from each other The optical constants of the respective films formed under the film conditions are obtained by actual measurement, and each film forming condition is made to correspond to each optical constant. The second correspondence relationship is obtained by theoretical calculation and is Each optical constant corresponds to each color message. The film forming apparatus according to claim 1, wherein the first correspondence is performed, and the corresponding data is created based on the first correspondence and the second correspondence after the interpolation processing . A method for producing data, comprising: a first correspondence obtaining step of actually measuring optical constants of respective films formed under mutually different film forming conditions, obtaining respective film forming conditions and respective optical constants a first correspondence relationship corresponding to each other; a second correspondence relationship obtaining step of obtaining a second correspondence relationship between the optical constants and the respective color information by theoretical calculation; and a fabricating step, based on the first correspondence a relationship between the relationship and the second correspondence, and corresponding data for forming a color message corresponding to a film formation condition of a film for forming the color, and at least a gas supply amount in the film formation condition As a film color adjustment element. The data creation method of claim 6, further comprising an interpolation processing step of performing interpolation processing on the first correspondence obtained by the first correspondence obtaining step, and in the fabricating step The corresponding data is created based on the first correspondence relationship and the second correspondence relationship after the interpolation processing.