TW201709489A - Wafer level micro-display and active-type projector using the wafer level micro-display formed of a red dot-matrix type LED, a green dot-matrix type LED, and a blue dot-matrix type LED which are stacked up sequentially for reducing the volume and cost - Google Patents

Abstract

The present invention provides a wafer level micro-display and active-type projector using the wafer level micro-display, which comprise a wafer level micro-display body, the wafer level micro-display body is formed of a red dot-matrix type LED, a green dot-matrix type LED, and a blue dot-matrix type LED which are stacked up sequentially. The red, green, and blue dot-matrix type LEDs of different colors are stacked up and packaged to form the wafer level micro-display body. Because it is not necessary to package a single LED individually and then assemble into a dot-matrix type display, and a complicated optical system is not needed either, thereby achieving the purpose of reducing the volume and cost.

Description

Wafer-level microdisplay and active projector using the wafer level microdisplay

The present invention relates to a wafer level microdisplay, and more particularly to a wafer level microdisplay for use in an active projector.

Due to the invention of the projector, the content of the speech or briefing can be directly presented in static text, pictures, or even animated, making the speech and presentation more lively and convenient, and even more families are gradually using projections. Watch the movie to make life more fulfilling.

The early projector was a three-gun projector, which included three lenses to project the three primary colors of red, green, and blue, and was mixed into three images by three primary colors. However, due to the bulky size, low brightness, and complicated wiring of the three-shot projector, As for the use is less convenient. Also because of the inconvenience of the three-gun projector, in order to overcome the above problems, a single-gun projector has been developed, which single-projection projector projects a complete projection of the image by a lens. The single-shot projector is three shots in size. The projector is small and easy to carry and install, making the single-gun projector a projector that is currently used by many people.

In the prior art, there is a single-gun projector that uses three high-temperature polysilicon (HTPS) liquid crystal panels as light-modulating components, so that the light emitted by the bulb of the single-gun projector passes through The three HTPS liquid crystal panels are separately modulated to output corresponding three primary colors, and the light is concentrated by a prism, and then the image is projected through a lens; however, since the bulb of the single-shot projector is large, A single-shot projector requires three HTPS liquid crystal panels to modulate the light, so the optical system is complicated, resulting in a large volume after assembly, and the cost of the single-shot projector is high due to the complexity of the optical system. Therefore, the prior art There is room for improvement.

In view of the above problems in the prior art, the main object of the present invention is to provide a wafer level microdisplay and an active projector using the wafer level microdisplay, which emits light by red, green and blue light. The wafer-level microdisplays assembled by the diodes do not require an additional packaging process or a complicated optical system, thereby achieving the purpose of reducing the size and reducing the cost.

The main technical means for achieving the above object is the wafer level microdisplay, which comprises: a wafer level microdisplay body comprising a conductive substrate, a red dot matrix light emitting diode, a green a light dot matrix light emitting diode and a blue light dot matrix light emitting diode, wherein the red dot matrix light emitting diode is disposed on the upper surface of the conductive substrate, and the green dot matrix light emitting diode is disposed on the light emitting diode The upper surface of the red dot matrix light emitting diode is disposed on the upper surface of the green dot matrix light emitting diode.

According to the above configuration, the wafer-level microdisplay system is sequentially stacked on the upper surface of the conductive substrate by the red, green, and blue dot matrix light emitting diodes, by controlling the red light, the green light, and The light-emitting state of the blue-light dot matrix light-emitting diodes is such that a different color effect can be projected. Since an additional packaging process and a complicated optical system are not required, a color image can be projected, thereby achieving a reduction in volume. The purpose of reducing costs.

Another main technical means for achieving the above object is to enable the aforementioned active projector, comprising: a lens; a wafer level microdisplay body corresponding to the lens, the wafer level microdisplay body comprising a conductive a substrate, a red dot matrix light emitting diode, a green dot matrix light emitting diode, and a blue dot matrix light emitting diode, wherein the red dot matrix light emitting diode is disposed on the conductive substrate a surface of the green dot matrix light emitting diode disposed on the upper surface of the green dot matrix light emitting diode, wherein the green dot matrix light emitting diode is disposed on the upper surface of the green dot matrix light emitting diode .

According to the above configuration, since the wafer-level microdisplay system is sequentially stacked on the upper surface of the conductive substrate by the red, green, and blue dot matrix light emitting diodes, when mounted on the active projector In the body, by controlling the light-emitting state of the red, green and blue light-emitting diodes, the effect of projecting different colors can be achieved, and since a complicated projection optical system is not required, a color image can be projected. In order to achieve the purpose of reducing the volume and reducing the cost.

For the wafer level microdisplay of the present invention and the active projector using the wafer level microdisplay, please refer to FIG. 1 , which includes an active projector body 10 and a wafer level microdisplay body. The active micro projector body 10 is disposed in the active projector body 10; in the embodiment, the active projector body 10 has a lens 11 corresponding to the wafer level microdisplay body to amplify the wafer level A picture projected by the microdisplay body.

The wafer-level microdisplay body includes a conductive substrate 20, a red dot matrix light emitting diode 30, a green dot matrix light emitting diode 40, and a blue dot matrix light emitting diode 50. a semiconductor wafer bonding method (Wafer bonding process) and a semiconductor 3D packaging method, the red, green, and blue dot matrix light emitting diodes 30, 40, 50 are sequentially stacked on the upper surface of the conductive substrate 20. The semiconductor wafer bonding method (Wafer bonding process) is to remove the substrate originally used to carry the red, green and blue dot matrix light-emitting diodes 30, 40, 50, and then the red light spot The array light-emitting diode 30 is transferred to the upper surface of the conductive substrate 20, and the green dot matrix light-emitting diode 40 is transferred to the upper surface of the red dot matrix light-emitting diode 30, and is semiconductor. The 3D packaging method causes the red and green dot matrix light emitting diodes 30 and 40 to be electrically connected, and then the blue dot matrix light emitting diode 50 is transferred to the green dot matrix light emitting diode 40. The upper surface, and also the red, green and blue dot matrix in a semiconductor 3D packaging method Photo-diode 30, 40 is electrically connected to the control.

The red, green and blue light emitting diodes 30, 40, 50 on the light emitting diode system correspond to each other, so that the red, green and blue dot matrix light emitting diodes 30, 40, 50 The generated light energy is projected, and the light emitted by the red dot matrix light-emitting diode 30 passes through the green dot matrix light-emitting diode 40 and the blue dot matrix light-emitting diode 50; The light emitted by the green dot matrix light emitting diode 40 passes through the blue dot matrix light emitting diode 50, and the red, green and blue dot matrix light emitting diodes 30 are adjusted. 40, 50 light state to control the projection screen and color of the active projector.

The conductive substrate 20 is a conductive substrate having good heat dissipation and conductivity; the conductive substrate 20 can be made of a molybdenum material, a tantalum material, an aluminum material or a copper material.

The red dot matrix light emitting diode 30, the green dot matrix light emitting diode 40, and the blue dot matrix light emitting diode 50 have the same structure. In this embodiment, the red dot matrix is used. The light-emitting diode 30 illustrates the structural relationship.

Referring to FIG. 2 and FIG. 3 , the first structure of the red dot matrix light emitting diode 30 has a carrier substrate 31 and a plurality of spaced light emitting blocks. The polar body group 32, each of the light-emitting diode groups 32 has a plurality of light-emitting diodes 33 arranged in a line in a first direction (Y direction) and spaced apart, and the light-emitting diodes of the adjacent light-emitting diode groups 32 The second direction (X direction) is arranged in a line, and the first direction (Y direction) is perpendicular to the second direction (X direction).

The LEDs 33 of the LED group 32 respectively have a first epitaxial layer 331 , a luminescent layer 332 and a second epitaxial layer 333 , and the illuminating diodes of the illuminating diode groups 32 . The first epitaxial layer 331 of the body 33 is connected to form a first epitaxial layer platform 334, respectively.

Each of the first epitaxial layer platforms 334 of the light-emitting diode groups 32 has a first spacer 301 parallel to the first direction (Y direction), and the light-emitting diode group 32 has two light-emitting diodes Each of the pole bodies 33 has a second spacer 302 parallel to the second direction (X direction), and the LEDs 33 of the LED groups 32 are arranged at intervals.

The first surface of the first epitaxial layer platform 334 of the light-emitting diode group 32 is respectively provided with a first electrode 34 for electrically connecting the light-emitting diodes 33 of the light-emitting diode groups 32, respectively. A transparent first first insulating layer 35 is disposed between the light emitting diode group 32 and the carrier substrate 31, and the surface of the light emitting diode group 32, the carrier substrate 31 and the first electrode 34. The insulating layer 35 is used to protect the first electrodes 36 and the light emitting diode groups 32. The first insulating layer 35 may be composed of a germanium dioxide (SiO ₂ ) material or a tantalum nitride (SiN) material. .

A second electrode 36 is disposed on the upper surface of the second epitaxial layer 333 of the light emitting diode 33 of the light emitting diode group 32, and the second electrode 36 is respectively disposed on the upper surface of the first insulating layer 35. The light emitting diodes 33 arranged in the second direction (X direction) are connected in series to form an electrical connection, and the first insulating layer 35 provides the supporting effect of the second electrodes 36. And a second insulating layer 37 is disposed on the upper surface of the second electrode 36 and the upper surface of the first insulating layer 35 for protecting the second electrode 36. The second insulating layer 37 can be a dioxide. It is composed of a bismuth (SiO ₂ ) material or a tantalum nitride (SiN) material.

A plurality of gratings 38 are disposed on the upper surface of the second insulating layer 37, and the gratings 38 respectively correspond to the first epitaxial platform 304 of the light emitting diode group 32 and the first insulating channels 302, so that the light does not The first isolation channel 302 and the first epitaxial platform 304 of the LED array 32 are illuminated to effectively concentrate light.

A package area 303 is disposed around the red dot matrix light-emitting diode 30. The package area 303 has a first area in the first direction (Y direction), and the first areas are respectively disposed on the first area. a plurality of first electrode ends 304 respectively corresponding to the first electrodes 34 of the corresponding light-emitting diode group 32 and electrically connected, the package region having a second region opposite to the second direction (X direction), A plurality of second electrode ends 305 are respectively disposed on the second regions to respectively correspond to the second electrodes 36 of the light-emitting diode group 32 and form an electrical connection.

The green dot matrix light emitting diode 40 also has a carrier substrate (not shown), a plurality of light emitting diode groups (not shown), a plurality of first electrodes (not shown), and a plurality of second An electrode (not shown) and a package area (not shown), the blue dot matrix LED 50 also has a carrier substrate (not shown) and a plurality of LED groups (not shown) Shown, a plurality of first electrodes (not shown), a plurality of second electrodes (not shown), and a package region (not shown), when the red, green, and blue dot matrix light-emitting diodes When the bodies 30, 40, and 50 are combined, the carrier substrate 31 of the red dot matrix light emitting diode 30 is removed, and the red dot matrix light emitting diode 30 is transferred to the conductive substrate 20. On the upper surface, the carrier substrate of the green dot matrix light emitting diode 40 is removed, and transferred to the upper surface of the red dot matrix light emitting diode 30, and finally the blue dot matrix light emitting diode The carrier substrate of the body 50 is removed and transferred to the upper surface of the green dot matrix light emitting diode 40. The pair of light emitting diodes 32 of the red dot matrix light emitting diode 30 are paired. a light emitting diode group (not shown) of the green light and blue light dot matrix light emitting diodes 40 and 50, and a first electrode 34 and a second electrode 36 of the red dot matrix light emitting diode 30 and The package area 303 is aligned with the first electrode (not shown), the second electrode (not shown), and the package area (not shown) of the green light and blue light dot matrix LEDs 40, 50. In order to facilitate the subsequent fabrication of the electrical connection control by the semiconductor 3D packaging method.

Referring to FIGS. 1, 4, and 5, for the second structure of the red dot matrix light emitting diode 30, the second structure of the red dot matrix light emitting diode is substantially the same as the first structure. Similarly, the first epitaxial layer 331 of the second structure of the LED group 32 is not connected to form the first epitaxial layer platform 334 at the first spacers 301, but the second structure is The first epitaxial layer 331 of the light-emitting diode group 32 is connected at the second spacers 302, and the first electrode 36 of the second structure is disposed, and the grating 38A of the second structure is different.

The red light-emitting diodes are provided with a third insulating layer 39 on the upper surface of the carrier substrate 31. The LED groups 32 are respectively disposed on the upper surface of the third insulating layer 39. And the first electrode layer 34 is disposed between the first epitaxial layer 331 and the third isolation layer 39 of the light-emitting diode group 32, and the first electrode layers 34 respectively emit the light The light emitting diodes 33 arranged in the first direction (Y direction) of the polar body group 32 are connected in series to form an electrical connection, and the lower surface of the first insulating layer 35 is in contact with the upper surface of the third insulating layer 39. The third insulating layer 39 may be composed of a germanium dioxide (SiO ₂ ) material or a tantalum nitride (SiN) material.

A plurality of spaced-apart plurality of gratings 38A are disposed on the upper surface of the second insulating layer 37, and the gratings 38A respectively shield the first spacers 301 so that light is not emitted from the first insulating tracks 302. Effectively concentrates light.

The green dot matrix light emitting diode 40 also has a carrier substrate (not shown), a plurality of light emitting diode groups (not shown), a plurality of first electrodes (not shown), and a plurality of second An electrode (not shown) and a package area (not shown), the blue dot matrix LED 50 also has a carrier substrate (not shown) and a plurality of LED groups (not shown) Shown, a plurality of first electrodes (not shown), a plurality of second electrodes (not shown), and a package region (not shown), when the red, green, and blue dot matrix light-emitting diodes When the bodies 30, 40, and 50 are combined, the carrier substrate 31 of the red dot matrix light emitting diode 30 is removed, and the red dot matrix light emitting diode 30 is transferred to the conductive substrate 20. On the upper surface, the carrier substrate of the green dot matrix light emitting diode 40 is removed, and transferred to the upper surface of the red dot matrix light emitting diode 30, and finally the blue dot matrix light emitting diode The carrier substrate of the body 50 is removed and transferred to the upper surface of the green dot matrix light emitting diode 40. The pair of light emitting diodes 32 of the red dot matrix light emitting diode 30 are paired. a light emitting diode group (not shown) of the green light and blue light dot matrix light emitting diodes 40 and 50, and a first electrode 34 and a second electrode 36 of the red dot matrix light emitting diode 30 and The package area 303 is aligned with the first electrode (not shown), the second electrode (not shown), and the package area (not shown) of the green light and blue light dot matrix LEDs 40, 50. In order to facilitate the subsequent fabrication of the electrical connection control by the semiconductor 3D packaging method.

Referring to FIGS. 1 and 6 to 7, a third structure of the red dot matrix light-emitting diode 30 has a carrier substrate 61, which is arranged in a plurality of intervals. a light-emitting diode 62 having a plurality of first spacers 63 parallel to a first direction (Y direction) and a plurality of first parallel to a second direction (X direction) The first and second spacers 63 and 64 are spaced apart from each other, so that the light-emitting diodes 62 are arranged in a dot matrix, and the first direction (Y direction) ) is perpendicular to the second direction (X direction).

A plurality of first electrodes 65 are arranged between the lower surface of the light-emitting diode 62 and the upper surface of the carrier substrate 61, and the first electrodes 65 are parallel to the second direction (X direction). The light emitting diodes 62 arranged in series in the second direction (X direction) are electrically connected to the lower surface of the light emitting diodes 62, the lower surface of the first electrodes 65, and the carrier substrate. A first insulating layer 66 is disposed between the upper surfaces of the 61, and is used to protect the first electrodes 65 and the light emitting diodes 62.

A second insulating layer 67 is disposed on the upper surface of the first insulating layer 66, the light emitting diodes 62, and the upper surfaces of the light emitting diodes 62 for protecting the light emitting diodes 62. And a plurality of second electrodes 68 arranged at intervals on the upper surface of the second insulating layer 67 and the upper surfaces of the LEDs 62, the second electrodes 68 being parallel to the first direction (Y direction), The light emitting diodes 62 arranged in series in the first direction (Y direction) are electrically connected, and the second insulating layer 67 is provided to support the second electrodes 68, the first and second insulating layers 66, 67 may be composed of a germanium dioxide (SiO ₂ ) material or a tantalum nitride (SiN) material.

A third insulating layer 69 is disposed on the upper surface of the second insulating layer 67 and the upper surface of the second electrode 68 for protecting the second electrodes 68. The upper surface of the third insulating layer 69 is provided with a plurality of spaces. Arranged gratings 70, the gratings 70 are parallel to the second direction (X direction), and the gratings 70 respectively shield the second spacers 64 so that light does not pass from the second isolation channels 64. The third insulating layer 69 can be made of a germanium dioxide (SiO ₂ ) material or a tantalum nitride (SiN) material by illuminating to effectively concentrate the light.

A package area 71 is disposed around the red dot matrix light-emitting diode 30. The package area 71 has a first area in the second direction (X direction), and the first areas are respectively disposed on the first area. a plurality of first electrode ends 711 respectively corresponding to the first electrode 65 and forming an electrical connection, the package region having a second region in the first direction (Y direction), and the second regions respectively A plurality of second electrode terminals 712 are provided to respectively correspond to the second electrode 68 and to form an electrical connection.

The green dot matrix light emitting diode 40 has a plurality of light emitting diodes (not shown), a plurality of first electrodes (not shown), a plurality of second electrodes (not shown), and a package area ( The blue dot matrix light emitting diode 50 has a plurality of light emitting diodes (not shown), a plurality of first electrodes (not shown), and a plurality of second electrodes (not shown). And a package area (not shown), when the red, green and blue dot matrix light-emitting diodes 30, 40, 50 are combined, the red dot matrix light-emitting diode 30 is first The carrier substrate 61 is removed, and the red dot matrix light emitting diode 30 is transferred to the upper surface of the conductive substrate 20, and the carrier substrate of the green dot matrix light emitting diode 40 is removed and transferred to The upper surface of the red dot matrix light emitting diode 30 is finally removed from the carrier substrate of the blue dot matrix light emitting diode 50, and transferred to the upper surface of the green dot matrix light emitting diode 40. The LEDs 62, the first electrodes 62, and the second electrodes 68 of the red dot matrix LEDs 30 are aligned with the green and blue dot matrix LEDs 40, 50. a photodiode (not shown), a first electrode (not shown), and a second electrode (not shown), the encapsulation area 71 of the red dot matrix LED 30 corresponds to the green light And a package area (not shown) of the blue dot matrix light emitting diodes 40, 50, and electrical connection control is made through the semiconductor 3D packaging method.

Referring to FIGS. 1 and 8, a fourth structure of the red dot matrix light-emitting diode 30 is used. The fourth structure is substantially the same as the third structure, but the first electrode 65 of the third structure. The second electrode 68, the first electrode end 711, the second electrode end 712, and the grating 70 are disposed in different directions. The first electrode 65 of the fourth structure is parallel to the first direction (Y direction). And electrically connected to the light-emitting diodes 62 arranged in a line in the first direction (Y direction) and electrically connected, and the second electrodes 68 of the fourth structure are respectively in the second direction (X direction) Parallelly opposite, and respectively connected to the light-emitting diodes 62 arranged in a line in the second direction (X direction) and electrically connected, the first electrode ends 711 of the fourth structure are respectively disposed in the package area 70 The second electrode end 711 of the fourth structure is respectively disposed on the first area of the package area 70 to respectively correspond to the second area. The electrode 68 is electrically connected to be electrically connected, and the grating 70 of the fourth structure is respectively associated with the first One direction (Y direction) is parallel to each other to shield the first spacers 63 so that light is not emitted from the first isolation tracks 63 to effectively concentrate the light.

The red, green, and blue light-emitting diodes 30, 40, and 50 are disposed on the conductive substrate 20 and directly encapsulated in the active projector body 10 to correspond to the diameter 11, There is no need for an additional complicated optical path in the assembly, which results in the bulk of the active projector body 10, so as to achieve the purpose of reducing the volume and reducing the cost.

10‧‧‧Active projector 11‧‧‧ lens 20‧‧‧Electrical substrate 30‧‧‧Red dot matrix light-emitting diode 301, 63‧‧‧ first compartment 302,64‧‧‧Second compartment 303,71‧‧‧Packing area 304,711‧‧‧first electrode end 305,712‧‧‧second electrode end 31,61‧‧‧bearing substrate 32‧‧‧Lighting diode group 33,62‧‧‧Lighting diode 331‧‧‧First epitaxial layer 332‧‧‧Lighting layer 333‧‧‧Second epilayer 334‧‧‧First epitaxial layer platform 34, 65‧‧‧ first electrode 35,66‧‧‧first insulation 36,68‧‧‧second electrode 37,67‧‧‧Second insulation 38, 38A, 70‧‧ ‧ grating 39, 69‧‧‧ third insulation 40‧‧‧Green dot matrix light-emitting diode 50‧‧‧Blu-ray dot matrix light-emitting diode

1 is a schematic diagram of an active projector in accordance with a preferred embodiment of the present invention. 2 is a top plan view of a first dot matrix light emitting diode structure in accordance with a preferred embodiment of the present invention. 3 is a cross-sectional view showing the structure of a first dot matrix light emitting diode according to a preferred embodiment of the present invention. 4 is a top plan view of a second dot matrix light emitting diode structure in accordance with a preferred embodiment of the present invention. Figure 5 is a cross-sectional view taken along line A-A of Figure 4 of a second dot matrix light emitting diode structure in accordance with a preferred embodiment of the present invention. Figure 6 is a plan view showing a structure of a third dot matrix light emitting diode according to a preferred embodiment of the present invention. Figure 7 is a cross-sectional view showing the structure of a third dot matrix light emitting diode according to a preferred embodiment of the present invention. Figure 8 is a plan view showing a structure of a fourth dot matrix light emitting diode according to a preferred embodiment of the present invention.

10‧‧‧Active projector

11‧‧‧ lens

20‧‧‧Electrical substrate

30‧‧‧Red dot matrix light-emitting diode

40‧‧‧Green dot matrix light-emitting diode

50‧‧‧Blu-ray dot matrix light-emitting diode

Claims (30)

A wafer level microdisplay comprises: a wafer level microdisplay body comprising a conductive substrate, a red dot matrix light emitting diode, a green dot matrix light emitting diode and a blue dot matrix The light-emitting diode is disposed on the upper surface of the conductive substrate, and the green dot matrix light-emitting diode is disposed on the upper surface of the red dot matrix light-emitting diode. The blue dot matrix light emitting diode is disposed on the upper surface of the green dot matrix light emitting diode. The wafer-level microdisplay of claim 1, wherein the red dot matrix light emitting diode has a plurality of light emitting diode groups arranged at intervals, a plurality of first electrodes, a plurality of second electrodes, and a first insulating layer a second isolation layer and a package region, the light-emitting diode groups respectively have a plurality of light-emitting diodes arranged in a line in a first direction, and the light-emitting diodes of the adjacent light-emitting diode groups are respectively a second direction is arranged in a straight line, the first direction is perpendicular to the second direction; the light emitting diodes respectively have a first epitaxial layer, a light emitting layer and a second epitaxial layer, and the light emitting two The first epitaxial layers of the polar body group are respectively connected to form a first epitaxial layer platform, and the first epitaxial layer platforms respectively have a first spacer parallel to the first direction, and the illuminating Each of the LEDs of the diode group has a second spacer parallel to the second direction; the first electrodes are respectively disposed on the first epitaxial layer platform to respectively connect the two LEDs a light-emitting diode of the polar body group, and on the group of the light-emitting diodes The surface of the first electrode is provided with the first isolation layer; the second electrodes are disposed on the upper surface of the first isolation layer and the upper surface of the group of the LEDs to be connected in series The light emitting diodes are arranged in the second direction; the upper surface of the second electrode and the upper surface of the first insulating layer are provided with the second insulating layer, and the upper surface of the second insulating layer A plurality of gratings are disposed, the gratings respectively shielding the first epitaxial layer platform of the groups of the light emitting diodes and the first spacers. The wafer-level microdisplay of claim 2, wherein the red dot matrix light emitting diode is provided with a package area around the red light emitting diode, wherein the package area has a first area in the first direction. The second direction has a second area, the first division of the package area is provided with a plurality of first electrode ends, and is respectively connected to the first electrodes, and the second division of the package area is provided with a plurality of second electrode ends And connected to the second electrodes, respectively. The wafer-level microdisplay of claim 3, wherein the green dot matrix light emitting diode has a plurality of light emitting diode groups arranged at intervals, a plurality of first electrodes, a plurality of second electrodes, and a first isolation layer a second isolation layer and a package region, the light-emitting diode groups respectively have a plurality of light-emitting diodes arranged in a line in a first direction, and the light-emitting diodes of the adjacent light-emitting diode groups are respectively a second direction is arranged in a straight line, the first direction is perpendicular to the second direction; the light emitting diodes respectively have a first epitaxial layer, a light emitting layer and a second epitaxial layer, and the light emitting two The first epitaxial layers of the polar body group are respectively connected to form a first epitaxial layer platform, and the first epitaxial layer platforms respectively have a first spacer parallel to the first direction, and the illuminating Each of the LEDs of the diode group has a second spacer parallel to the second direction; the first electrodes are respectively disposed on the first epitaxial layer platform to respectively connect the two LEDs a light-emitting diode of the polar body group, and on the group of the light-emitting diodes The surface of the first electrode is provided with the first isolation layer; the second electrodes are disposed on the upper surface of the first isolation layer and the upper surface of the group of the LEDs to be connected in series The light emitting diodes are arranged in the second direction; the upper surface of the second electrode and the upper surface of the first insulating layer are provided with the second insulating layer, and the upper surface of the second insulating layer A plurality of gratings are disposed, the gratings respectively shielding the first epitaxial layer platform of the groups of the light emitting diodes and the first spacers. The wafer-level microdisplay of claim 4, wherein the green dot matrix light emitting diode is provided with a package area around the green light emitting diode, wherein the package area has a first area in the first direction. The second direction has a second area, the first division of the package area is provided with a plurality of first electrode ends, and is respectively connected to the first electrodes, and the second division of the package area is provided with a plurality of second electrode ends And connected to the second electrodes, respectively. The wafer-level microdisplay of claim 5, wherein the blue dot matrix light emitting diode has a plurality of light emitting diode groups arranged at intervals, a plurality of first electrodes, a plurality of second electrodes, a first insulating layer, a second isolation layer and a package region, the LED groups respectively have a plurality of light-emitting diodes arranged in a line in a first direction, and the light-emitting diode systems of the adjacent light-emitting diode groups are respectively The second direction is linearly arranged, and the first direction is perpendicular to the second direction; the light emitting diodes respectively have a first epitaxial layer, a light emitting layer and a second epitaxial layer, and the light emitting diodes The first epitaxial layer of the body group is respectively connected to form a first epitaxial layer platform, and the first epitaxial layer platforms respectively have a first interval parallel to the first direction, and the two light emitting diodes Each of the light-emitting diodes of the polar body group has a second spacer parallel to the second direction; the first electrodes are respectively disposed on the first epitaxial layer platform to respectively connect the light-emitting diodes a group of light-emitting diodes, and on the group of light-emitting diodes The surface of the first electrode is provided with the first isolation layer; the second electrodes are disposed on the upper surface of the first isolation layer and the upper surface of the group of the LEDs to be connected in series The light emitting diodes are arranged in the second direction; the upper surface of the second electrode and the upper surface of the first insulating layer are provided with the second insulating layer, and the upper surface of the second insulating layer A plurality of gratings are disposed, the gratings respectively shielding the first epitaxial layer platform of the groups of the light emitting diodes and the first spacers. The wafer-level microdisplay of claim 6, wherein the green dot matrix light emitting diode is provided with a package area around the green light emitting diode, wherein the package area has a first area in the first direction. The second direction has a second area, the first division of the package area is provided with a plurality of first electrode ends, and is respectively connected to the first electrodes, and the second division of the package area is provided with a plurality of second electrode ends And connected to the second electrodes, respectively. The wafer-level microdisplay of claim 7, wherein the red light dot matrix light emitting diode group, the green light dot matrix light emitting diode group, and the blue light The LED array of the dot matrix light emitting diode is relatively aligned, the package area of the red dot matrix light emitting diode, the package area of the green dot matrix light emitting diode and the blue dot matrix The package area of the light-emitting diode is aligned. The wafer-level microdisplay of claim 1, wherein the red dot matrix light emitting diode has a plurality of light emitting diode groups arranged at intervals, a plurality of first electrodes, a plurality of second electrodes, and a first insulating layer a second isolation layer, a third isolation layer and a package region, each of the light-emitting diode groups having a plurality of light-emitting diodes arranged in a line in a first direction, adjacent to the light-emitting diode group The light emitting diodes are respectively arranged in a line in a second direction, the first direction being perpendicular to the second direction; and each of the groups of light emitting diodes has a first channel parallel to the first direction, Each of the light-emitting diodes of the light-emitting diode group has a second space parallel to the second direction, and the light-emitting diodes of the light-emitting diode group respectively have a first epitaxial layer and a light-emitting layer. And a second epitaxial layer, wherein the first epitaxial layers of the light emitting diodes are connected between the second spacers; the first electrodes are respectively disposed in the first group of the LED groups a lower surface of the epitaxial layer to respectively connect the light emitting diodes of the light emitting diode groups The third insulating layer is disposed on the lower surface of the light emitting diode group and the lower surface of the first electrode; the upper surface of the third insulating layer and the upper surface of the light emitting diode group are provided with the first surface An insulating layer is disposed on the upper surface of the first insulating layer and the upper surface of the group of the light emitting diodes, respectively, in series with the groups of the light emitting diodes arranged in the second direction The second isolation layer is disposed on the upper surface of the second electrode and the upper surface of the first isolation layer, and the upper surface of the second isolation layer is provided with a plurality of gratings, and the gratings respectively shield the first spacers Road. The wafer-level microdisplay of claim 9, wherein the red dot matrix light emitting diode is provided with a package area around the red light emitting diode, wherein the package area has a first area in the first direction. The second direction has a second area, the first division of the package area is provided with a plurality of first electrode ends, and is respectively connected to the first electrodes, and the second division of the package area is provided with a plurality of second electrode ends And connected to the second electrodes, respectively. The wafer-level microdisplay of claim 10, wherein the green dot matrix light emitting diode has a plurality of light emitting diode groups arranged at intervals, a plurality of first electrodes, a plurality of second electrodes, and a first insulating layer a second isolation layer, a third isolation layer and a package region, each of the light-emitting diode groups having a plurality of light-emitting diodes arranged in a line in a first direction, adjacent to the light-emitting diode group The light emitting diodes are respectively arranged in a line in a second direction, the first direction being perpendicular to the second direction; and each of the groups of light emitting diodes has a first channel parallel to the first direction, Each of the light-emitting diodes of the light-emitting diode group has a second space parallel to the second direction, and the light-emitting diodes of the light-emitting diode group respectively have a first epitaxial layer and a light-emitting layer. And a second epitaxial layer, wherein the first epitaxial layers of the light emitting diodes are connected between the second spacers; the first electrodes are respectively disposed in the first group of the LED groups The lower surface of the epitaxial layer to respectively illuminate the light-emitting diode groups of the light-emitting diode groups The third insulating layer is disposed on the lower surface of the light emitting diode group and the lower surface of the first electrode; the upper surface of the third insulating layer and the upper surface of the light emitting diode group are provided with the first surface An insulating layer is disposed on the upper surface of the first insulating layer and the upper surface of the group of the light emitting diodes, respectively, in series with the groups of the light emitting diodes arranged in the second direction The second isolation layer is disposed on the upper surface of the second electrode and the upper surface of the first isolation layer, and the upper surface of the second isolation layer is provided with a plurality of gratings, and the gratings respectively shield the first spacers Road. The wafer-level microdisplay of claim 11, wherein the green dot matrix light emitting diode is provided with a package area around the green light emitting diode, wherein the package area has a first area in the first direction. The second direction has a second area, the first division of the package area is provided with a plurality of first electrode ends, and is respectively connected to the first electrodes, and the second division of the package area is provided with a plurality of second electrode ends And connected to the second electrodes, respectively. The wafer-level microdisplay of claim 12, wherein the blue dot matrix light emitting diode has a plurality of light emitting diode groups arranged at intervals, a plurality of first electrodes, a plurality of second electrodes, a first insulating layer, a second isolation layer, a third isolation layer and a package region, each of the light-emitting diode groups respectively having a plurality of light-emitting diodes arranged in a line in a first direction, and the light-emitting diodes of the adjacent light-emitting diode groups The two pole systems are respectively arranged in a line in a second direction, the first direction being perpendicular to the second direction; each of the groups of light emitting diodes has a first interval parallel to the first direction, and the like Each of the light-emitting diodes of the light-emitting diode group has a second space parallel to the second direction, and the light-emitting diodes of the light-emitting diode group respectively have a first epitaxial layer and a light-emitting layer. And a second epitaxial layer, wherein the first epitaxial layers of the light emitting diodes are connected to each other; the first electrodes are respectively disposed on the first beam of the light emitting diode group a lower surface of the crystal layer to respectively illuminate the light-emitting diode groups of the light-emitting diode groups The third insulating layer is disposed on the lower surface of the light emitting diode group and the lower surface of the first electrode; the upper surface of the third insulating layer and the upper surface of the light emitting diode group are provided with the first surface An insulating layer is disposed on the upper surface of the first insulating layer and the upper surface of the group of the light emitting diodes, respectively, in series with the groups of the light emitting diodes arranged in the second direction The second isolation layer is disposed on the upper surface of the second electrode and the upper surface of the first isolation layer, and the upper surface of the second isolation layer is provided with a plurality of gratings, and the gratings respectively shield the first spacers Road. The wafer-level microdisplay of claim 13 , wherein a surrounding area of the blue dot matrix light emitting diode is disposed, the package area has a first area in the first direction, and the second area The first section of the encapsulation area is provided with a plurality of first electrode ends, and is respectively connected to the first electrodes, and the second division of the encapsulation area is provided with a plurality of second electrode ends. And connected to the second electrodes respectively. The wafer-level microdisplay of claim 14, wherein the red light dot matrix light emitting diode group, the green light dot matrix light emitting diode group, and the blue light The LED array of the dot matrix light emitting diode is relatively aligned, the package area of the red dot matrix light emitting diode, the package area of the green dot matrix light emitting diode and the blue dot matrix The package area of the light-emitting diode is aligned. The wafer-level microdisplay of claim 1, wherein the red dot matrix light-emitting diode has a plurality of light-emitting diodes arranged at intervals, a plurality of first electrodes spaced apart, and a plurality of second electrodes arranged at intervals a first isolation layer, a second isolation layer, a third isolation layer and a package region; the light-emitting diodes have a plurality of first spacers parallel to a first direction, and a second direction a plurality of parallel second channels, the first direction being perpendicular to the second direction; the first electrodes are respectively disposed at a distance parallel to the second direction on the lower surface of the light emitting diodes to be respectively connected in series The light emitting diodes are arranged in a line in the second direction, and the first insulating layer is disposed on the lower surface of the light emitting diodes and the lower surface of the first electrodes on the upper surface of the light emitting diodes And the second insulating layer is disposed on the upper surface of the first insulating layer, and the second electrodes are respectively disposed on the upper surface of the light emitting diodes and the second insulating layer at intervals corresponding to the first direction a surface that is straight in series in the first direction a light-emitting diode arranged in a line, the third insulating layer is disposed on the upper surface of the second electrode and the upper surface of the second insulating layer, and is disposed at an interval from the upper surface of the third insulating layer A plurality of gratings having parallel directions, the gratings respectively shielding the second spacers. The wafer-level microdisplay of claim 16, wherein the red dot matrix light emitting diode is provided with a package area around the red light emitting diode, wherein the package area has a first area in the first direction. The second direction has a second area, and the second area of the package area is provided with a plurality of first electrode ends, and is respectively connected to the first electrodes, and the first division of the package area is provided with a plurality of second electrode ends And connected to the second electrodes, respectively. The wafer-level microdisplay of claim 17, wherein the green dot matrix light emitting diode has a plurality of light emitting diodes arranged at intervals, a plurality of first electrodes spaced apart, and a plurality of second electrodes spaced apart, a first isolation layer, a second isolation layer, a third isolation layer and a package region; the light-emitting diodes have a plurality of first spacers parallel to a first direction, and a second direction a plurality of parallel second channels, the first direction being perpendicular to the second direction; the first electrodes are respectively disposed at a distance parallel to the second direction on the lower surface of the light emitting diodes to be respectively connected in series The light emitting diodes are arranged in a line in the second direction, and the first insulating layer is disposed on the lower surface of the light emitting diodes and the lower surface of the first electrodes on the upper surface of the light emitting diodes And the second insulating layer is disposed on the upper surface of the first insulating layer, and the second electrodes are respectively disposed on the upper surface of the light emitting diodes and the second insulating layer at intervals corresponding to the first direction Surfaces are respectively connected in series in the first direction a light-emitting diode arranged in a line, the third insulating layer is disposed on the upper surface of the second electrode and the upper surface of the second insulating layer, and is disposed at an interval from the upper surface of the third insulating layer A plurality of gratings having parallel directions, the gratings respectively shielding the second spacers. The wafer-level microdisplay of claim 18, wherein the green dot matrix light emitting diode is provided with a package area around the green light emitting diode, wherein the package area has a first area in the first direction. The second direction has a second area, and the second area of the package area is provided with a plurality of first electrode ends, and is respectively connected to the first electrodes, and the first division of the package area is provided with a plurality of second electrode ends And connected to the second electrodes, respectively. The wafer-level microdisplay of claim 19, wherein the blue dot matrix light emitting diode has a plurality of light emitting diodes arranged at intervals, a plurality of first electrodes spaced apart, a plurality of second electrodes spaced apart, and one a first isolation layer, a second isolation layer, a third isolation layer and a package region; the plurality of first spacers are parallel to a first direction and parallel to a second direction a plurality of second spacers, wherein the first direction is perpendicular to the second direction; and the first electrodes are respectively disposed on the lower surface of the light emitting diodes in parallel with the second direction to be respectively connected to the second spacer a light emitting diode arranged in a line in a second direction, wherein the first insulating layer is disposed on a lower surface of the light emitting diode and a lower surface of the first electrodes, and on an upper surface of the light emitting diodes The second insulating layer is disposed on the upper surface of the first insulating layer, and the second electrodes are respectively disposed on the upper surface of the light emitting diodes and the upper surface of the second insulating layer at intervals corresponding to the first direction. To be connected in series in the first direction a light-emitting diode arranged in a line, the third insulating layer is disposed on the upper surface of the second electrode and the upper surface of the second insulating layer, and is disposed at an interval from the upper surface of the third insulating layer A plurality of gratings having parallel directions, the gratings respectively shielding the second spacers. The wafer-level microdisplay of claim 20, wherein a surrounding area of the blue dot matrix light emitting diode is disposed, the package area has a first area in the first direction, and the second area The second section of the encapsulation area is provided with a plurality of first electrode ends, and is respectively connected to the first electrodes, and the first division of the encapsulation area is provided with a plurality of second electrode ends. And connected to the second electrodes respectively. The wafer level microdisplay of claim 21, wherein the red light dot matrix light emitting diode, the green light dot matrix light emitting diode, and the blue light dot matrix The light-emitting diode system of the light-emitting diode is aligned, the package area of the red dot matrix light-emitting diode, the package area of the green dot matrix light-emitting diode and the blue dot matrix light-emitting diode The package area is relatively uniform. The wafer-level microdisplay of claim 1, wherein the red dot matrix light-emitting diode has a plurality of light-emitting diodes arranged at intervals, a plurality of first electrodes spaced apart, and a plurality of second electrodes arranged at intervals a first isolation layer, a second isolation layer, a third isolation layer and a package region; the light-emitting diodes have a plurality of first spacers parallel to a first direction, and a second direction a plurality of parallel second channels, the first direction is perpendicular to the second direction; the first electrodes are respectively disposed at a distance parallel to the first direction on the lower surface of the light emitting diodes to be respectively connected in series The light emitting diodes are arranged in a line in the first direction, and the first insulating layer is disposed on the lower surface of the light emitting diodes and the lower surface of the first electrodes on the upper surface of the light emitting diodes And the second insulating layer is disposed on the upper surface of the first insulating layer, and the second electrodes are respectively disposed on the upper surface of the light emitting diodes and the second insulating layer at intervals corresponding to the second direction a surface that is connected in series in the second direction a light-emitting diode arranged in a line, the third insulating layer is disposed on the upper surface of the second electrode and the upper surface of the second insulating layer, and is disposed at an interval from the upper surface of the third insulating layer A plurality of gratings having parallel directions, the gratings respectively shielding the second spacers. The wafer-level microdisplay of claim 23, wherein the red dot matrix light emitting diode is provided with a package area around the red light emitting diode, wherein the package area has a first area in the first direction. The second direction has a second area, the first division of the package area is provided with a plurality of first electrode ends, and is respectively connected to the first electrodes, and the second division of the package area is provided with a plurality of second electrode ends And connected to the second electrodes, respectively. The wafer-level microdisplay of claim 24, wherein the green dot matrix light emitting diode has a plurality of light emitting diodes arranged at intervals, a plurality of first electrodes spaced apart, a plurality of second electrodes spaced apart, a first isolation layer, a second isolation layer, a third isolation layer and a package region; the light-emitting diodes have a plurality of first spacers parallel to a first direction, and a second direction a plurality of parallel second channels, the first direction is perpendicular to the second direction; the first electrodes are respectively disposed at a distance parallel to the first direction on the lower surface of the light emitting diodes to be respectively connected in series The light emitting diodes are arranged in a line in the first direction, and the first insulating layer is disposed on the lower surface of the light emitting diodes and the lower surface of the first electrodes on the upper surface of the light emitting diodes And the second insulating layer is disposed on the upper surface of the first insulating layer, and the second electrodes are respectively disposed on the upper surface of the light emitting diodes and the second insulating layer at intervals corresponding to the second direction Surfaces are respectively connected in series in the second direction a light-emitting diode arranged in a line, the third insulating layer is disposed on the upper surface of the second electrode and the upper surface of the second insulating layer, and is disposed at an interval from the upper surface of the third insulating layer A plurality of gratings having parallel directions, the gratings respectively shielding the second spacers. The wafer-level microdisplay of claim 25, wherein the green dot matrix light emitting diode is provided with a package area around the green light emitting diode, wherein the package area has a first area in the first direction. The second direction has a second area, the first division of the package area is provided with a plurality of first electrode ends, and is respectively connected to the first electrodes, and the second division of the package area is provided with a plurality of second electrode ends And connected to the second electrodes, respectively. The wafer-level microdisplay of claim 26, wherein the blue dot matrix light emitting diode has a plurality of light emitting diodes arranged at intervals, a plurality of first electrodes spaced apart, a plurality of second electrodes spaced apart, and one a first isolation layer, a second isolation layer, a third isolation layer and a package region; the plurality of first spacers are parallel to a first direction and parallel to a second direction a plurality of second spacers, wherein the first direction is perpendicular to the second direction; and the first electrodes are respectively disposed on the lower surface of the light emitting diodes in parallel with the first direction to be respectively connected to the second spacer a light emitting diode arranged in a line in a first direction, wherein the first insulating layer is disposed on a lower surface of the light emitting diode and a lower surface of the first electrodes, and on an upper surface of the light emitting diodes The second insulating layer is disposed on the upper surface of the first insulating layer, and the second electrodes are respectively disposed on the upper surface of the light emitting diode and the upper surface of the second insulating layer in parallel with the second direction. To be connected in series in the second direction a light-emitting diode arranged in a line, the third insulating layer is disposed on the upper surface of the second electrode and the upper surface of the second insulating layer, and is disposed at an interval from the upper surface of the third insulating layer A plurality of gratings having parallel directions, the gratings respectively shielding the second spacers. The wafer-level microdisplay of claim 27, wherein a surrounding area of the blue dot matrix light emitting diode is disposed, the package area has a first area in the first direction, and the second area The first section of the encapsulation area is provided with a plurality of first electrode ends, and is respectively connected to the first electrodes, and the second division of the encapsulation area is provided with a plurality of second electrode ends. And connected to the second electrodes respectively. The wafer-level microdisplay of claim 28, wherein the red light dot matrix light emitting diode, the green light dot matrix light emitting diode, and the blue light dot matrix The light-emitting diode system of the light-emitting diode is aligned, the package area of the red dot matrix light-emitting diode, the package area of the green dot matrix light-emitting diode and the blue dot matrix light-emitting diode The package area is relatively uniform. An active projector, comprising: a lens; a wafer level microdisplay body corresponding to the lens; wherein the wafer level microdisplay system is the wafer according to any one of claims 1 to 8. The micro-display main body, or the wafer-level micro-display system, the wafer-level microdisplay main body according to any one of claims 1 to 9 or the wafer-level microdisplay main system as claimed in claim 1. The wafer-level microdisplay body according to any one of claims 16 to 22, or the wafer level microdisplay body according to any one of claims 1 to 23 to 29.