JP2005116684A - Solid light emitting element and projector - Google Patents

Solid light emitting element and projector Download PDF

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Publication number
JP2005116684A
JP2005116684A JP2003347097A JP2003347097A JP2005116684A JP 2005116684 A JP2005116684 A JP 2005116684A JP 2003347097 A JP2003347097 A JP 2003347097A JP 2003347097 A JP2003347097 A JP 2003347097A JP 2005116684 A JP2005116684 A JP 2005116684A
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light
light emitting
electrode
type semiconductor
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秀也 ▲関▼
Hideya Seki
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Seiko Epson Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10157—Shape being other than a cuboid at the active surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10158—Shape being other than a cuboid at the passive surface

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  • Liquid Crystal (AREA)
  • Projection Apparatus (AREA)
  • Led Devices (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Led Device Packages (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a solid light emitting element that can be reduced in light quantity loss and efficiency drop caused when emissive light is shielded by electrodes etc., and, at the same time, can be reduced in the unevenness of illuminance distribution caused by the shadows of the electrodes etc., and to provide a projector using the element. <P>SOLUTION: The solid light emitting element 12r is provided with a light emitter 15 which is formed between a semiconductor 14n of one conductivity type and another semiconductor 14p of the other conductivity type and emits light, a first electrode 16n which supplies a current to the semiconductor 14n of one conductivity type, and a second electrode 16p which supplies a current to the semiconductor 14p of the other conductivity type and causes the light emitting surface 14a of the semiconductor 14n to emit the light. A conductive member which supplies a current to the first electrode 16n from the outside is connected to the first electrode 16n in an area which is in contact with the outer edge of the light emitting surface 14a. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、固体発光素子およびプロジェクタに関する。   The present invention relates to a solid state light emitting device and a projector.

従来のプロジェクタ（投射型表示装置）では、その光源として、古くはハロゲンランプ、近年は高輝度高効率である高圧水銀ランプ（ＵＨＰ）が多く用いられてきた。放電型のランプであるＵＨＰを用いた光源は高圧の電源回路を要し、大型で重く、プロジェクタの小型軽量化の妨げになっていた。また、ハロゲンランプよりは寿命が長いものの依然短寿命である他、光源の制御（高速の点灯、消灯、変調）が略不可能で、また立ち上げに数分という長い時間を要していた。   In conventional projectors (projection display devices), a halogen lamp has been used as a light source in the past, and a high-pressure mercury lamp (UHP) having high luminance and high efficiency has been used in recent years. A light source using UHP, which is a discharge lamp, requires a high-voltage power circuit, is large and heavy, and hinders the reduction in size and weight of the projector. Further, although it has a longer life than a halogen lamp, it still has a short life, and it is almost impossible to control the light source (fast lighting, extinguishing, modulation), and it takes a long time to start up.

そこで最近、新しい光源としてＬＥＤ発光体が注目されている。ＬＥＤは超小型・超軽量、長寿命である。また、駆動電流の制御によって、点灯・消灯、出射光量の調整が自由にできる。この点でプロジェクタの光源としても有望であり、既に小型・携帯用の小画面プロジェクタへの応用開発が始まっている。
また、光変調手段に液晶パネルを用いる液晶プロジェクタでは、一方向に偏光を揃え、５０％以下となる光の利用効率を原理的に２倍の１００％に近づける偏光変換技術が用いられている。さらに、光源の照度ムラを解消するために、光量分布を均一にするインテグレータの挿入が不可欠となり、さまざまな技術が提案されている（例えば、特許文献１から３）。
特開平６−２６５８２３号公報 特開平６−２８９３８７号公報 特開２００３−５７４４５号公報 Therefore, recently, an LED illuminant has attracted attention as a new light source. LEDs are ultra-compact, ultra-light, and have a long life. In addition, by controlling the drive current, it is possible to freely turn on / off and adjust the amount of emitted light. In this respect, it is also promising as a light source for projectors, and application development has already started for small and portable small screen projectors.
In addition, in a liquid crystal projector using a liquid crystal panel as a light modulation means, a polarization conversion technique is used in which polarized light is aligned in one direction and the light use efficiency of 50% or less is doubled to 100% in principle. Furthermore, in order to eliminate illuminance unevenness of the light source, it is indispensable to insert an integrator that makes the light amount distribution uniform, and various techniques have been proposed (for example, Patent Documents 1 to 3).
JP-A-6-265823 JP-A-6-289387 JP 2003-57445 A

上記の特許文献１および２では、偏光変換およびインテグレータ手段としてフライアイレンズレンズとＰＢＳ（偏光ビームスプリッタ）とを組み合わせた方式が提案されている。この方式では、２枚のフライアイレンズの間にＰＢＳアレイを挿入した構成を取り、その光の利用効率は、５０％×１．７倍程度という高い値を得ることができる。
しかしながら、偏光変換に用いるＰＢＳアレイは高価かつ大型であるため、プロジェクタの小型軽量化および低価格化には適さないという問題があった。 In Patent Documents 1 and 2 described above, a method in which a fly-eye lens lens and a PBS (polarization beam splitter) are combined as polarization conversion and integrator means is proposed. In this method, a configuration is adopted in which a PBS array is inserted between two fly-eye lenses, and the light use efficiency can be as high as 50% × 1.7 times.
However, since the PBS array used for polarization conversion is expensive and large, there is a problem that it is not suitable for reducing the size and weight of the projector and reducing the price.

上記の特許文献３では、偏光変換およびインテグレータ手段としてロッドレンズと反射型偏光分離手段とを組み合わせた方式が提案されている。しかしながら、特に小型のプロジェクタにおいては、ロッドレンズの長さを十分に確保し難く、ＬＥＤチップの表面に設けられた電極の影などが投射面にまで投影され照度分布の不均一が解消されないという問題があった。
また、ＬＥＤチップの電極は不透明金属であり、ＬＥＤチップ表面の略中央の広い領域を占めているため、ＬＥＤチップからの出射光を遮り光量損失、効率低下の大きな原因となっていた。 In the above-mentioned Patent Document 3, a system in which a rod lens and a reflection type polarization separation means are combined is proposed as polarization conversion and integrator means. However, particularly in a small projector, it is difficult to ensure a sufficient length of the rod lens, and the shadow of the electrode provided on the surface of the LED chip is projected to the projection surface, and the uneven illumination distribution cannot be resolved. was there.
In addition, since the electrode of the LED chip is an opaque metal and occupies a wide area at the center of the surface of the LED chip, the emitted light from the LED chip is blocked, causing a large loss of light amount and a decrease in efficiency.

本発明は、上記の課題を解決するためになされたものであって、電極などによる出射光の遮光が原因の光量損失、効率低下を軽減するとともに、電極などの影による照度分布のムラを低減することができる固体発光素子およびそれを用いたプロジェクタを提供することを目的とする。   The present invention has been made in order to solve the above-described problems, and reduces light amount loss and efficiency reduction caused by shielding of emitted light by electrodes and the like, and reduces unevenness in illuminance distribution due to shadows of electrodes and the like. An object of the present invention is to provide a solid-state light-emitting element that can be used and a projector using the same.

上記目的を達成するために、本発明の第１の固体発光素子は、一方の導電型の半導体および他方の導電型の半導体の間に形成された光を出射する発光部と、一方の導電型の半導体に電流を供給する第１の電極と、他方の導電型の半導体に電流を供給する第２の電極と、を備え、一方の導電型の半導体に設けられた光出射面から光を出射させる固体発光素子であって、外部から第１の電極に電流を供給する導電部材が、光出射面上の外縁と接する領域において、第１の電極と接続されていることを特徴とする。   In order to achieve the above object, a first solid state light emitting device of the present invention includes a light emitting portion that emits light formed between one conductive type semiconductor and the other conductive type semiconductor, and one conductive type. A first electrode for supplying a current to the semiconductor of the first and a second electrode for supplying a current to the semiconductor of the other conductivity type, and emitting light from a light emitting surface provided in the semiconductor of the first conductivity type In the solid light-emitting element, a conductive member that supplies current to the first electrode from the outside is connected to the first electrode in a region in contact with the outer edge on the light emitting surface.

すなわち、本発明の第１の固体発光素子は、導電部材が、光出射面上の外縁と接する領域で第１の電極と接続されているため、光出射面の略中央で接続されている場合と比較して、光の出射を妨げ難くなり、固体発光素子から出射される光の光量損失、効率低下を軽減することができる。
また、固体発光素子のエテンデュを小さくすることができ、これにより光量損失、効率低下を軽減することができる。ここで、エテンデュとは、有効に活用できる光束が存在する空間的な広がりを面積と立体角の積で表される数値であって、光学的に保存されるものである。そのため、固体発光素子のエテンデュを、例えば液晶パネルのエテンデュより小さくすることで、液晶パネルにおける光量損失、効率低下を軽減することができる。
また、導電部材が光出射面上を横切ることがなくなるため、導電部材の影による照度分布のムラを低減することができる。 That is, in the first solid-state light-emitting element of the present invention, the conductive member is connected to the first electrode in a region in contact with the outer edge on the light emission surface, and thus is connected at substantially the center of the light emission surface. Compared with the above, it becomes difficult to prevent the light from being emitted, and it is possible to reduce the light amount loss and the efficiency reduction of the light emitted from the solid state light emitting device.
In addition, the etendue of the solid state light emitting device can be reduced, thereby reducing light loss and efficiency reduction. Here, etendue is a numerical value represented by the product of the area and the solid angle, which is a spatial extent in which a luminous flux that can be effectively utilized exists, and is optically stored. Therefore, by making the etendue of the solid light emitting element smaller than, for example, the etendue of the liquid crystal panel, it is possible to reduce the light amount loss and the efficiency decrease in the liquid crystal panel.
In addition, since the conductive member does not cross the light emitting surface, unevenness in the illuminance distribution due to the shadow of the conductive member can be reduced.

本発明の第２の固体発光素子は、一方の導電型の半導体および他方の導電型の半導体の間に形成された光を出射する発光部と、一方の導電型の半導体に電流を供給する第１の電極と、他方の導電型の半導体に電流を供給する第２の電極と、を備え、他方の導電型の半導体が被実装対象と対向するように実装される固体発光素子であって、第１の電極に電流を供給する導電部材が、一方の導電型の半導体、発光部および他方の導電型の半導体に渡り配置されていることことを特徴とする。   The second solid-state light emitting device of the present invention includes a light emitting portion that emits light formed between one conductive type semiconductor and the other conductive type semiconductor, and a first type that supplies current to the one conductive type semiconductor. A solid-state light-emitting element including a first electrode and a second electrode that supplies a current to the other conductive type semiconductor, the second conductive type semiconductor being mounted so as to face the mounting target, The conductive member for supplying a current to the first electrode is disposed over one conductive type semiconductor, the light emitting portion, and the other conductive type semiconductor.

すなわち、本発明の第２の固体発光素子は、導電部材が一方の導電型の半導体、発光部および他方の導電型の半導体に渡り配置されているため、導電部材は光の出射を妨げ難くなり、固体発光素子から出射される光の光量損失、効率低下を軽減することができる。   That is, in the second solid state light emitting device of the present invention, since the conductive member is arranged over one conductive type semiconductor, the light emitting portion, and the other conductive type semiconductor, the conductive member is difficult to prevent light emission. Further, it is possible to reduce the light amount loss and the efficiency decrease of the light emitted from the solid state light emitting device.

上記の構成を実現するために、より具体的には、導電部材が一方の導電型の半導体、発光部および他方の導電型の半導体の内部を貫通して配置されていてもよい。
この構成によれば、導電部材が一方の導電型の半導体、発光部および他方の導電型の半導体を貫通しているため、より確実に導電部材が光出射面上を横切ることがなくなり、導電部材の影による照度分布のムラを低減することができる。 In order to realize the above configuration, more specifically, the conductive member may be disposed so as to penetrate the inside of one conductive type semiconductor, the light emitting unit, and the other conductive type semiconductor.
According to this configuration, since the conductive member penetrates one of the conductive type semiconductor, the light emitting portion, and the other conductive type semiconductor, the conductive member does not cross the light emitting surface more reliably, and the conductive member The unevenness of the illuminance distribution due to the shadows of can be reduced.

上記の構成を実現するために、より具体的には、導電部材が、一方の導電型の半導体、発光部および他方の導電型の半導体の側面に配置されていてもよい。
この構成によれば、導電部材が一方の導電型の半導体、発光部および他方の導電型の半導体の側面に配置されているため、より確実に導電部材が光出射面上を横切ることがなくなり、導電部材の影による照度分布のムラを低減することができる。
また、導電部材を一方の導電型の半導体、発光部および他方の導電型の半導体の側面に配置しているので、容易に導電部材を配置することができる。 In order to realize the above configuration, more specifically, the conductive member may be disposed on one conductive type semiconductor, the light emitting portion, and the side surface of the other conductive type semiconductor.
According to this configuration, since the conductive member is disposed on the side surface of the one conductive type semiconductor, the light emitting unit, and the other conductive type semiconductor, the conductive member does not cross the light emitting surface more reliably. Unevenness in the illuminance distribution due to the shadow of the conductive member can be reduced.
In addition, since the conductive member is disposed on the side surface of the one conductive type semiconductor, the light emitting portion, and the other conductive type semiconductor, the conductive member can be easily disposed.

上記の構成を実現するために、より具体的には、第１の電極と導電部材とが、一方の導電型の半導体における光出射面上の外縁と接する領域で接続されていてもよい。
この構成によれば、第１の電極と導電部材とが光出射面の略中央で接続されている場合と比較して、光の出射を妨げることがなくなり、光量損失、効率低下を軽減することができる。 In order to realize the above-described configuration, more specifically, the first electrode and the conductive member may be connected in a region in contact with the outer edge on the light emitting surface in one conductivity type semiconductor.
According to this configuration, compared with the case where the first electrode and the conductive member are connected at substantially the center of the light emission surface, the light emission is not hindered, and the light loss and efficiency reduction are reduced. Can do.

上記の構成を実現するために、より具体的には、第１の電極を透明材料から形成してもよい。
この構成によれば、光出射面からの光の出射を妨げることがなくなり、固体光源から出射された光の光量損失、効率低下を軽減することができる。 In order to realize the above configuration, more specifically, the first electrode may be formed of a transparent material.
According to this configuration, the emission of light from the light emission surface is not hindered, and the light amount loss and efficiency reduction of the light emitted from the solid light source can be reduced.

本発明のプロジェクタは、光源と、光源からの光を変調する光変調手段と、光変調手段によって変調された光を投射する投射手段とを備えたプロジェクタであって、光源が上記本発明の固体発光素子を備えていることを特徴とする。   The projector according to the present invention is a projector including a light source, a light modulation unit that modulates light from the light source, and a projection unit that projects light modulated by the light modulation unit. A light emitting element is provided.

すなわち、本発明のプロジェクタは、上記本発明の固体発光素子を用いているため、電極などによる出射光の遮光が原因の光量損失、効率低下を軽減するとともに、電極などの影による照度分布のムラを低減することができ、照度分布の均一な画像を投射することができる。   That is, since the projector according to the present invention uses the solid-state light emitting element according to the present invention, the light intensity loss and the efficiency decrease due to the shielding of the emitted light by the electrode and the like are reduced, and the unevenness of the illumination distribution due to the shadow of the electrode and the like is reduced. Can be reduced, and an image with a uniform illuminance distribution can be projected.

〔第１の実施の形態〕
以下、本発明における第１の実施の形態について図１から図２を参照して説明する。
図１は、本実施の形態に係るプロジェクタの全体構成を示す概略図である。なお、以下の全ての図面においては、図面を見やすくするため、各構成要素の膜厚や寸法の比率などは適宜異ならせてある。
本実施の形態のプロジェクタ１は３板式の液晶プロジェクタであり、図１に示すように、それぞれＲ（赤）、Ｇ（緑）、Ｂ（青）の色光を出射可能な照明装置（光源）１０Ｒ、１０Ｇ、１０Ｂと、出射された各色光を変調する透過型の液晶ライトバルブ（光変調手段）２０Ｒ、２０Ｇ、２０Ｂと、変調された各色光を合成してカラー画像にするダイクロイッククロスプリズム３０と、合成されたカラー画像を投射する投射レンズ（投射手段）４０と、から概略構成されている。 [First Embodiment]
Hereinafter, a first embodiment of the present invention will be described with reference to FIGS.
FIG. 1 is a schematic diagram showing an overall configuration of a projector according to the present embodiment. In all the drawings below, the film thicknesses and dimensional ratios of the constituent elements are appropriately changed in order to make the drawings easy to see.
The projector 1 of the present embodiment is a three-plate liquid crystal projector, and as shown in FIG. 1, an illumination device (light source) 10R capable of emitting R (red), G (green), and B (blue) color lights, respectively. 10G, 10B, transmissive liquid crystal light valves (light modulating means) 20R, 20G, 20B for modulating each emitted color light, and a dichroic cross prism 30 for combining the modulated color lights into a color image, , And a projection lens (projection means) 40 that projects the synthesized color image.

図２（ａ）は、本実施の形態に係る照明装置の全体構成を示す概略平面図であり、図２（ｂ）は、本実施の形態に係る照明装置の全体構成を示す概略側面図である。
照明装置１０Ｒ、１０Ｇ、１０Ｂは、その構成が同一で光を出射する固体発光素子（ＬＥＤチップ１２ｒ、１２ｇ、１２ｂ）が異なるだけなので、照明装置１０Ｒの構成について説明し、照明装置１０Ｇ、１０Ｂについては説明を省略する。 FIG. 2A is a schematic plan view showing the overall configuration of the illumination device according to the present embodiment, and FIG. 2B is a schematic side view showing the overall configuration of the illumination device according to the present embodiment. is there.
Since the illumination devices 10R, 10G, and 10B have the same configuration and only different solid-state light emitting elements (LED chips 12r, 12g, and 12b) that emit light, the configuration of the illumination device 10R will be described and the illumination devices 10G and 10B will be described. Will not be described.

照明装置１０Ｒは、図２（ａ）、（ｂ）に示すように、基板１１と、Ｒの色光を出射するＬＥＤチップ（固体発光素子）１２ｒと、透明樹脂からなりＬＥＤチップを覆うパッケージ１３と、から概略構成されている。
基板１１には、ＬＥＤチップ１２ｒに電流を供給するｐ電極（第２の電極）１１ｐとｎ電極（第１の電極）１１ｎとが形成されている。
ＬＥＤチップ１２ｒは、基板１１側から順にｐ型半導体（他方の導電型の半導体）１４ｐ、発光層（発光部）１５、ｎ型半導体（一方の導電型の半導体）１４ｎの順に積層された逆台形形状に形成されている。ｐ型半導体１４ｐの基板１１に対向した面にはｐ電極（第２の電極）１６ｐが形成され、基板１１のｐ電極１１ｐと電気的に接続されている。ｎ型半導体１４ｎの光出射面１４ａには、供給された電流を光出射面１４ａに拡散させる拡散電極（第１の電極）１６ｎと、拡散電極１４ａと電気的に接続されるボンディングパッド１６ｊと、が形成されている。ボンディングパッド１６ｊは、光出射面１４ａの角部に配置され、ボンディングワイヤ（導電部材）１７により基板１１のｎ電極１１ｎと電気的に接続されている。拡散電極１６ｎは、導電材料からなる複数の線状の電極であり、ボンディングパッド１６ｊから放射状に配置されている。
なお、本実施の形態においては、ボンディングパッド１６ｊが光出射面１４ａの角部に配置された構成に適応して説明したが、角部に限られることなく、ボンディングパッド１６ｊを光出射面１４ａの辺に接するように配置してもよい。 As shown in FIGS. 2A and 2B, the illuminating device 10R includes a substrate 11, an LED chip (solid light emitting element) 12r that emits R color light, and a package 13 that is made of a transparent resin and covers the LED chip. , Is roughly composed.
A p-electrode (second electrode) 11p and an n-electrode (first electrode) 11n that supply current to the LED chip 12r are formed on the substrate 11.
The LED chip 12r is an inverted trapezoid in which a p-type semiconductor (the other conductive semiconductor) 14p, a light emitting layer (light emitting portion) 15, and an n-type semiconductor (one conductive semiconductor) 14n are stacked in this order from the substrate 11 side. It is formed into a shape. A p-electrode (second electrode) 16 p is formed on the surface of the p-type semiconductor 14 p facing the substrate 11, and is electrically connected to the p-electrode 11 p of the substrate 11. On the light emitting surface 14a of the n-type semiconductor 14n, a diffusion electrode (first electrode) 16n for diffusing a supplied current to the light emitting surface 14a, a bonding pad 16j electrically connected to the diffusion electrode 14a, Is formed. The bonding pad 16j is disposed at the corner of the light emitting surface 14a and is electrically connected to the n electrode 11n of the substrate 11 by a bonding wire (conductive member) 17. The diffusion electrode 16n is a plurality of linear electrodes made of a conductive material, and is arranged radially from the bonding pad 16j.
In this embodiment, the bonding pad 16j has been described so as to be adapted to the configuration in which the bonding pad 16j is arranged at the corner of the light emitting surface 14a. You may arrange | position so that a side may be touched.

パッケージ１３の基板１１に対向した面には、ＬＥＤチップ１１ｒを収納する凹部１３ａが形成され、光出射側の面には、屈折により出射光を平行光化する凸曲面１３ｂが形成されている。凹部１３ａの空間には、例えばシリコンジェルのようなパッケージ１３と同等以上の屈折率を持つ充填材１３ｃが封入されている。
なお、本実施の形態において拡散電極１６ｎは、複数の線状の電極が放射状に配置された形態に適応して説明しているが、この形態に限られることなく、例えばＩＴＯなどのような透明材料を光出射面１４ａに面状に配置させたものに適応してもよい。この場合、透明材料で拡散電極１６ｎを形成しているため、照度分布にムラが生じることがない。 A concave portion 13a for accommodating the LED chip 11r is formed on the surface of the package 13 facing the substrate 11, and a convex curved surface 13b for collimating the emitted light by refraction is formed on the surface on the light emitting side. In the space of the recess 13a, a filler 13c having a refractive index equal to or higher than that of the package 13 such as silicon gel is enclosed.
In the present embodiment, the diffusion electrode 16n has been described in conformity with a form in which a plurality of linear electrodes are arranged in a radial manner. However, the present invention is not limited to this form, and a transparent material such as ITO is used. You may adapt to what arrange | positioned material to the light-projection surface 14a planarly. In this case, since the diffusion electrode 16n is formed of a transparent material, unevenness in the illuminance distribution does not occur.

照明装置１０Ｒ、１０Ｇ、１０Ｂとこれに対応する液晶ライトバルブ２０Ｒ、２０Ｇ、２０Ｂとの間には、図１に示すように、照明光の照度分布を液晶ライトバルブ２０Ｒ、２０Ｇ、２０Ｂにおいて均一化させるための照度均一化手段１９として、照明装置側から第１のフライアイレンズ１９１、第２のフライアイレンズ１９２が順次設置されている。第１のフライアイレンズ１９１は複数の２次光源像を形成し、第２のフライアイレンズ１９２は被照明領域である液晶ライトバルブの設置位置においてそれらを重畳する重畳レンズとしての機能を有する。   As shown in FIG. 1, the illumination light distribution between the illumination devices 10R, 10G, and 10B and the corresponding liquid crystal light valves 20R, 20G, and 20B is uniformized in the liquid crystal light valves 20R, 20G, and 20B. As the illuminance equalizing means 19 for the purpose, a first fly-eye lens 191 and a second fly-eye lens 192 are sequentially installed from the lighting device side. The first fly-eye lens 191 forms a plurality of secondary light source images, and the second fly-eye lens 192 functions as a superimposing lens that superimposes them at the installation position of the liquid crystal light valve that is the illuminated area.

液晶ライトバルブ２０Ｒ、２０Ｇ、２０Ｂには、画素スイッチング用素子として薄膜トランジスタ（Ｔｈｉｎ Ｆｉｌｍ Ｔｒａｎｓｉｓｔｏｒ、以下、ＴＦＴと略記する）を用いたＴＮ（Ｔｗｉｓｔｅｄ Ｎｅｍａｔｉｃ）モードのアクティブマトリクス方式の透過型の液晶セルが使用されている。
ダイクロイッククロスプリズム３０は、図１に示すように、４つの直角プリズムが貼り合わされた構造を有し、その貼り合わせ面３０ａ、３０ｂには誘電体多層膜からなる光反射膜（図示略）が十字状に形成されている。具体的には、貼り合わせ面３０ａには、液晶ライトバルブ２０Ｒで形成された赤色の画像光を反射し、それぞれ液晶ライトバルブ２０Ｇ、２０Ｂで形成された緑色及び青色の画像光を透過する光反射膜が設けられ、貼り合わせ面３０ｂには、液晶ライトバルブ２０Ｂで形成された青色の画像光を反射し、それぞれ液晶ライトバルブ２０Ｒ、２０Ｇで形成された赤色及び緑色の画像光を透過する光反射膜が設けられている。 The liquid crystal light valves 20R, 20G, and 20B use TN (Twisted Nematic) mode active matrix type transmissive liquid crystal cells using thin film transistors (hereinafter abbreviated as TFTs) as pixel switching elements. Has been.
As shown in FIG. 1, the dichroic cross prism 30 has a structure in which four right-angle prisms are bonded together. A light reflecting film (not shown) made of a dielectric multilayer film is formed on the bonded surfaces 30a and 30b. It is formed in a shape. Specifically, the reflection surface 30a reflects the red image light formed by the liquid crystal light valve 20R and transmits the green and blue image lights formed by the liquid crystal light valves 20G and 20B, respectively. A light reflection that reflects the blue image light formed by the liquid crystal light valve 20B and transmits the red and green image light formed by the liquid crystal light valves 20R and 20G, respectively, is provided on the bonding surface 30b. A membrane is provided.

次に、上記の構成からなるプロジェクタ１における作用について説明する。
照明装置１０Ｒ、１０Ｇ、１０Ｂから出射されたＲＧＢの各色光は、図１に示すように、それぞれ第１のフライアイレンズ１９１、第２のフライアイレンズ１９２を透過することでその光の密度分布に関係なく液晶ライトバルブ２０Ｒ、２０Ｇ、２０Ｂ全面に均一な密度で照射される。
液晶ライトバルブ２０Ｒ、２０Ｇ、２０Ｂに入射された各色光は変調されて、ダイクロイッククロスプリズム３０に入射され、カラー画像に合成されて投射レンズ４０によってスクリーン５０に投射される。 Next, the operation of the projector 1 having the above configuration will be described.
As shown in FIG. 1, the RGB color lights emitted from the illumination devices 10R, 10G, and 10B are transmitted through a first fly-eye lens 191 and a second fly-eye lens 192, respectively, thereby density distribution of the light. Irrespective of whether or not the liquid crystal light valves 20R, 20G, and 20B are irradiated to the entire surface with a uniform density.
Each color light incident on the liquid crystal light valves 20R, 20G, and 20B is modulated, incident on the dichroic cross prism 30, synthesized with a color image, and projected onto the screen 50 by the projection lens 40.

次に、本発明の実施の形態に係る照明装置１０Ｒ、１０Ｇ、１０Ｂにおける作用について説明する。
照明装置１０Ｒ、１０Ｇ、１０Ｂは、その作用が同一なので、照明装置１０Ｒの作用について説明し、照明装置１０Ｇ、１０Ｂについては説明を省略する。
照明装置１０Ｒは、図２（ａ）、（ｂ）に示すように、基板１１のｐ電極１１ｐおよびｎ電極１１ｎからＬＥＤチップ１２ｒに電流が供給される。ｐ電極１１ｐは、ＬＥＤチップ１２ｒのｐ電極１６ｐを介してｐ型半導体１４ｐと電気的に接続され、ｎ電極１１ｎは、ボンディングワイヤ１７およびボンディングパッド１６ｊ、拡散電極１６ｎを介してｎ型半導体１４ｎと電気的に接続されている。供給された電流は発光層１５においてＲの色光に変換され、光出射面１４ａから出射される。
ＬＥＤチップ１２ｒから出射された色光は、充填材１３ｃ内を伝搬してパッケージ１３に入射する。充填材１３ｃとパッケージ１３とでは充填材１３ｃの屈折率が高いので、色光は平行光化する方向に屈折してパッケージ１３内に入射する。パッケージ１３から出射するときには、凸曲面１３ｂを透過する際にさらに平行光化する方向に屈折してパッケージ１３から出射する。 Next, the effect | action in the illuminating devices 10R, 10G, and 10B which concern on embodiment of this invention is demonstrated.
Since the illumination devices 10R, 10G, and 10B have the same operation, the operation of the illumination device 10R will be described, and the description of the illumination devices 10G and 10B will be omitted.
In the illumination device 10R, as shown in FIGS. 2A and 2B, current is supplied from the p electrode 11p and the n electrode 11n of the substrate 11 to the LED chip 12r. The p-electrode 11p is electrically connected to the p-type semiconductor 14p via the p-electrode 16p of the LED chip 12r, and the n-electrode 11n is connected to the n-type semiconductor 14n via the bonding wire 17, the bonding pad 16j, and the diffusion electrode 16n. Electrically connected. The supplied current is converted into R color light in the light emitting layer 15 and emitted from the light emitting surface 14a.
The colored light emitted from the LED chip 12r propagates through the filler 13c and enters the package 13. Since the refractive index of the filler 13c is high between the filler 13c and the package 13, the color light is refracted in the direction of parallel light and enters the package 13. When exiting from the package 13, the light is further refracted in the direction of collimation when passing through the convex curved surface 13 b and exits from the package 13.

上記の構成によれば、ボンディングワイヤ１７が、光出射面１４ａ上の外周と接する領域で拡散電極１６ｎと接続されているため、光出射面１４ａの略中央で接続されている場合と比較して、色光の出射を妨げることがなくなり、光量損失、効率低下を軽減することができる。
また、ＬＥＤチップ１２ｒ、１２ｇ、１２ｂ、のエテンデュを小さくすることができるため、液晶ライトバルブ２０Ｒ、２０Ｇ、２０Ｂに、色光を漏らすことなく入射させることができる。そのため、ＬＥＤチップ１２ｒ、１２ｇ、１２ｂから出射された色光の光量損失、効率低下を軽減することができる。
また、ボンディングワイヤ１７が光出射面１４ａ上を横切ることがなくなるため、ボンディングワイヤ１７の影による照度分布のムラを低減することができる。 According to said structure, since the bonding wire 17 is connected with the diffusion electrode 16n in the area | region which contact | connects the outer periphery on the light-projection surface 14a, compared with the case where it is connected in the approximate center of the light-projection surface 14a. Thus, the emission of the color light is not hindered, and the light quantity loss and the efficiency reduction can be reduced.
In addition, since the etendue of the LED chips 12r, 12g, and 12b can be reduced, the colored light can be incident on the liquid crystal light valves 20R, 20G, and 20B without leaking. Therefore, it is possible to reduce the light amount loss and the efficiency decrease of the color light emitted from the LED chips 12r, 12g, and 12b.
Further, since the bonding wire 17 does not cross the light emitting surface 14a, unevenness in the illuminance distribution due to the shadow of the bonding wire 17 can be reduced.

〔第２の実施の形態〕
次に、本発明における第２の実施の形態について図３を参照して説明する。
本実施の形態に係るプロジェクタの基本構成は、第１の実施の形態と同様であるが、第１の実施の形態とは、照明装置が異なっている。よって、本実施の形態においては、図３を用いて照明装置周辺のみを説明し、液晶ライトバルブ等の説明を省略する。
図３（ａ）は、本実施の形態に係る照明装置の全体構成を示す概略平面図であり、図３（ｂ）は、本実施の形態に係る照明装置の全体構成を示す概略側面図である。
照明装置６０Ｒ、６０Ｇ、６０Ｂは、その構成が同一で光を出射する固体発光素子（ＬＥＤチップ６２ｒ、６２ｇ、６２ｂ）が異なるだけなので、照明装置６０Ｒの構成について説明し、照明装置６０Ｇ、６０Ｂについては説明を省略する。 [Second Embodiment]
Next, a second embodiment of the present invention will be described with reference to FIG.
The basic configuration of the projector according to the present embodiment is the same as that of the first embodiment, but the illumination device is different from that of the first embodiment. Therefore, in this embodiment, only the periphery of the illumination device will be described with reference to FIG. 3, and description of the liquid crystal light valve and the like will be omitted.
FIG. 3A is a schematic plan view showing the overall configuration of the illumination device according to the present embodiment, and FIG. 3B is a schematic side view showing the overall configuration of the illumination device according to the present embodiment. is there.
The illumination devices 60R, 60G, and 60B have the same configuration and differ only in the solid light emitting elements (LED chips 62r, 62g, and 62b) that emit light, so the configuration of the illumination device 60R will be described and the illumination devices 60G and 60B will be described. Will not be described.

照明装置６０Ｒは、図３（ａ）、（ｂ）に示すように、基板１１と、Ｒの色光を出射するＬＥＤチップ（固体発光素子）６２ｒと、透明樹脂からなりＬＥＤチップを覆うパッケージ１３と、から概略構成されている。
ＬＥＤチップ６２ｒは、基板１１側から順にｐ型半導体１４ｐ、発光層１５、ｎ型半導体１４ｎの順に積層された逆台形形状に形成されている。ｐ型半導体１４ｐの基板１１に対向した面にはｐ電極１６ｐが形成され、基板１１のｐ電極１１ｐと電気的に接続されている。
ｎ型半導体１４ｎの光出射面１４ａには、供給された電流を光出射面１４ａに拡散させる拡散電極１６ｎと、拡散電極１６ｎと電気的に接続されている接続部６６ｊと、が形成されている。
ＬＥＤチップ６２ｒ内には、ｐ型半導体１４ｐ、発光層１５およびｎ型半導体１４ｎを貫通する貫通導電体（導電部材）６３が設けられている。貫通導電体６３の光出射面１４ａ側の端部は、光出射面１４ａの角部に露出し、接続部６６ｊと電気的に接続するように配置されている。また、貫通導電体６３は、ＬＥＤチップ６２ｒの逆台形の側面に沿うように斜めに配置され、その基板１１側の端部は、基板１１のｎ電極１１ｎと電気的に接続されている。このような貫通電極６３は、光出射面１４ａにマスクを配置して、上記斜め方向からＲＩＥなどの異方性エッチングにより斜めの貫通孔を形成して、その内部に導電部材を充填することで形成することができる。
貫通導電体６３の周囲には、貫通導電体６３とｐ型半導体１４ｐ、発光層１５、ｎ型半導体１４ｎとの絶縁を図る絶縁層６４が配置されている。
なお、ＬＥＤチップ６２ｒの形状は本実施の形態に示したような逆台形に限られることなく、直方体や立方体のように側面が略垂直な形状のものでもよい。この場合、貫通導電体６３も略垂直となるように配置される。 As shown in FIGS. 3A and 3B, the illumination device 60R includes a substrate 11, an LED chip (solid light emitting element) 62r that emits R color light, and a package 13 that is made of a transparent resin and covers the LED chip. , Is roughly composed.
The LED chip 62r is formed in an inverted trapezoidal shape in which the p-type semiconductor 14p, the light emitting layer 15, and the n-type semiconductor 14n are sequentially stacked from the substrate 11 side. A p-electrode 16 p is formed on the surface of the p-type semiconductor 14 p facing the substrate 11, and is electrically connected to the p-electrode 11 p of the substrate 11.
On the light emitting surface 14a of the n-type semiconductor 14n, there are formed a diffusion electrode 16n that diffuses the supplied current to the light emitting surface 14a, and a connection portion 66j that is electrically connected to the diffusion electrode 16n. .
A penetrating conductor (conductive member) 63 that penetrates the p-type semiconductor 14p, the light emitting layer 15, and the n-type semiconductor 14n is provided in the LED chip 62r. The end of the penetrating conductor 63 on the light emitting surface 14a side is exposed at the corner of the light emitting surface 14a and is disposed so as to be electrically connected to the connecting portion 66j. Further, the through conductor 63 is disposed obliquely along the inverted trapezoidal side surface of the LED chip 62 r, and the end portion on the substrate 11 side is electrically connected to the n electrode 11 n of the substrate 11. Such a through electrode 63 is formed by arranging a mask on the light emitting surface 14a, forming an oblique through hole from the oblique direction by anisotropic etching such as RIE, and filling the inside with a conductive member. Can be formed.
Around the through conductor 63, an insulating layer 64 is disposed to insulate the through conductor 63 from the p-type semiconductor 14p, the light emitting layer 15, and the n-type semiconductor 14n.
The shape of the LED chip 62r is not limited to the inverted trapezoid as shown in the present embodiment, but may be a shape whose side surface is substantially vertical, such as a rectangular parallelepiped or a cube. In this case, the through conductor 63 is also arranged to be substantially vertical.

次に、本発明の実施の形態に係る照明装置６０Ｒ、６０Ｇ、６０Ｂにおける作用について説明する。
照明装置６０Ｒ、６０Ｇ、６０Ｂは、その作用が同一なので、照明装置６０Ｒの作用について説明し、照明装置６０Ｇ、６０Ｂについては説明を省略する。
照明装置６０Ｒは、図３（ａ）、（ｂ）に示すように、基板１１のｐ電極１１ｐおよびｎ電極１１ｎからＬＥＤチップ６２ｒに電流が供給される。ｐ電極１１ｐは、ＬＥＤチップ６２ｒのｐ電極１６ｐを介してｐ型半導体１４ｐと電気的に接続され、ｎ電極１１ｎは、貫通導電体６３および接続部６６ｊ、拡散電極１６ｎを介してｎ型半導体１４ｎと電気的に接続されている。供給された電流は発光層１５においてＲの色光に変換され、光出射面１４ａから出射される。 Next, the effect | action in the illuminating devices 60R, 60G, and 60B which concern on embodiment of this invention is demonstrated.
Since the lighting devices 60R, 60G, and 60B have the same operation, the operation of the lighting device 60R will be described, and the description of the lighting devices 60G and 60B will be omitted.
In the illumination device 60R, as shown in FIGS. 3A and 3B, current is supplied from the p electrode 11p and the n electrode 11n of the substrate 11 to the LED chip 62r. The p-electrode 11p is electrically connected to the p-type semiconductor 14p via the p-electrode 16p of the LED chip 62r, and the n-electrode 11n is connected to the n-type semiconductor 14n via the through conductor 63, the connecting portion 66j, and the diffusion electrode 16n. And are electrically connected. The supplied current is converted into R color light in the light emitting layer 15 and emitted from the light emitting surface 14a.

上記の構成によれば、貫通電極６３が、ｐ型半導体１４ｐ、発光層１５、ｎ型半導体１４ｎを貫通して基板１１のｎ電極１１ｎと電気的に接触するように配置されているため、貫通電極６３が光出射面１４ａ上を横切ることがなくなり、貫通電極６３の影による照度分布のムラを低減することができる。
また、接続部６６ｊはボンディングワイヤの代わりに貫通電極６３から電流を供給されるため、接続部６６ｊの面積を小さくすることができる。そのため、接続部６６ｊによる出射光の遮光が原因の光量損失、効率低下を軽減させることができる。 According to the above configuration, the through electrode 63 is disposed so as to penetrate the p-type semiconductor 14p, the light emitting layer 15, and the n-type semiconductor 14n and be in electrical contact with the n electrode 11n of the substrate 11. The electrode 63 does not cross over the light emitting surface 14a, and the illuminance distribution unevenness due to the shadow of the through electrode 63 can be reduced.
Further, since the connection portion 66j is supplied with a current from the through electrode 63 instead of the bonding wire, the area of the connection portion 66j can be reduced. Therefore, it is possible to reduce the light amount loss and the efficiency decrease due to the shielding of the emitted light by the connecting portion 66j.

〔第３の実施の形態〕
次に、本発明における第３の実施の形態について図４を参照して説明する。
本実施の形態に係るプロジェクタの基本構成は、第１の実施の形態と同様であるが、第１の実施の形態とは、照明装置が異なっている。よって、本実施の形態においては、図４を用いて照明装置周辺のみを説明し、液晶ライトバルブ等の説明を省略する。
図４（ａ）は、本実施の形態に係る照明装置の全体構成を示す概略平面図であり、図４（ｂ）は、本実施の形態に係る照明装置の全体構成を示す概略側面図である。
照明装置７０Ｒ、７０Ｇ、７０Ｂは、その構成が同一で光を出射する固体発光素子（ＬＥＤチップ７２ｒ、７２ｇ、７２ｂ）が異なるだけなので、照明装置７０Ｒの構成について説明し、照明装置７０Ｇ、７０Ｂについては説明を省略する。 [Third Embodiment]
Next, a third embodiment of the present invention will be described with reference to FIG.
The basic configuration of the projector according to the present embodiment is the same as that of the first embodiment, but the illumination device is different from that of the first embodiment. Therefore, in this embodiment, only the periphery of the illumination device will be described using FIG. 4 and description of the liquid crystal light valve and the like will be omitted.
FIG. 4A is a schematic plan view showing the overall configuration of the illumination device according to the present embodiment, and FIG. 4B is a schematic side view showing the overall configuration of the illumination device according to the present embodiment. is there.
Since the illumination devices 70R, 70G, and 70B have the same configuration and differ only in the solid light emitting elements (LED chips 72r, 72g, and 72b) that emit light, the configuration of the illumination device 70R will be described and the illumination devices 70G and 70B will be described. Will not be described.

照明装置７０Ｒは、図４（ａ）、（ｂ）に示すように、基板１１と、Ｒの色光を出射するＬＥＤチップ７２ｒと、透明樹脂からなりＬＥＤチップを覆うパッケージ１３と、から概略構成されている。
ＬＥＤチップ７２ｒは、基板１１側から順にｐ型半導体１４ｐ、発光層１５、ｎ型半導体１４ｎの順に積層された逆台形形状に形成されている。ｐ型半導体１４ｐの基板１１に対向した面にはｐ電極１６ｐが形成され、基板１１のｐ電極１１ｐと電気的に接続されている。 As shown in FIGS. 4A and 4B, the illumination device 70 </ b> R is roughly configured by a substrate 11, an LED chip 72 r that emits R color light, and a package 13 that is made of a transparent resin and covers the LED chip. ing.
The LED chip 72r is formed in an inverted trapezoidal shape in which the p-type semiconductor 14p, the light emitting layer 15, and the n-type semiconductor 14n are sequentially stacked from the substrate 11 side. A p-electrode 16 p is formed on the surface of the p-type semiconductor 14 p facing the substrate 11, and is electrically connected to the p-electrode 11 p of the substrate 11.

ｎ型半導体１４ｎの光出射面１４ａには、供給された電流を光出射面１４ａに拡散させる拡散電極１６ｎと、拡散電極１６ｎと電気的に接続されている接続部７６ｊと、が形成されている。
ＬＥＤチップ７２ｒの側面には、ｐ型半導体１４ｐ、発光層１５、ｎ型半導体１４ｎを跨ぐように溝部７１が形成されていて、溝部７１には側面導電体（導電部材）７３が設けられている。側面導電体７３の光出射面１４ａ側の端部は接続部７６ｊと電気的に接続され、基板１１側の端部は基板１１のｎ電極１１ｎと電気的に接続されている。
側面導電体７３の周囲には、側面導電体７３とｐ型半導体１４ｐ、発光層１５、ｎ型半導体１４ｎとの絶縁を図る絶縁層７４が配置されている。
なお、ＬＥＤチップ７２ｒの側面に溝部７１を設けずに、側面から盛り上がるように側面導電体７３を配置してもよい。この場合、ＬＥＤチップ７２ｒの溝部７１の形成工程を省略することができるため、より容易に光源を製造することができる。 On the light emitting surface 14a of the n-type semiconductor 14n, there are formed a diffusion electrode 16n that diffuses the supplied current to the light emitting surface 14a, and a connection portion 76j that is electrically connected to the diffusion electrode 16n. .
A groove portion 71 is formed on the side surface of the LED chip 72r so as to straddle the p-type semiconductor 14p, the light emitting layer 15, and the n-type semiconductor 14n, and a side conductor (conductive member) 73 is provided in the groove portion 71. . An end portion of the side conductor 73 on the light emitting surface 14 a side is electrically connected to the connection portion 76 j, and an end portion on the substrate 11 side is electrically connected to the n electrode 11 n of the substrate 11.
Around the side conductor 73, an insulating layer 74 is arranged to insulate the side conductor 73 from the p-type semiconductor 14p, the light emitting layer 15, and the n-type semiconductor 14n.
The side conductors 73 may be arranged so as to rise from the side without providing the groove 71 on the side of the LED chip 72r. In this case, since the process of forming the groove 71 of the LED chip 72r can be omitted, the light source can be manufactured more easily.

次に、本発明の実施の形態に係る照明装置７０Ｒ、７０Ｇ、７０Ｂにおける作用について説明する。
照明装置７０Ｒ、７０Ｇ、７０Ｂは、その作用が同一なので、照明装置７０Ｒの作用について説明し、照明装置７０Ｇ、７０Ｂについては説明を省略する。
照明装置７０Ｒは、図４（ａ）、（ｂ）に示すように、基板１１のｐ電極１１ｐおよびｎ電極１１ｎからＬＥＤチップ６２ｒに電流が供給される。ｐ電極１１ｐは、ＬＥＤチップ７２ｒのｐ電極１６ｐを介してｐ型半導体１４ｐと電気的に接続され、ｎ電極１１ｎは、側面導電体７３および接続部７６ｊ、拡散電極１６ｎを介してｎ型半導体１４ｎと電気的に接続されている。供給された電流は発光層１５においてＲの色光に変換され、光出射面１４ａから出射される。 Next, the effect | action in the illuminating devices 70R, 70G, and 70B which concern on embodiment of this invention is demonstrated.
Since the lighting devices 70R, 70G, and 70B have the same operation, the operation of the lighting device 70R will be described, and the description of the lighting devices 70G and 70B will be omitted.
As shown in FIGS. 4A and 4B, the illumination device 70R is supplied with current from the p electrode 11p and the n electrode 11n of the substrate 11 to the LED chip 62r. The p-electrode 11p is electrically connected to the p-type semiconductor 14p via the p-electrode 16p of the LED chip 72r, and the n-electrode 11n is connected to the n-type semiconductor 14n via the side conductor 73, the connecting portion 76j, and the diffusion electrode 16n. And are electrically connected. The supplied current is converted into R color light in the light emitting layer 15 and emitted from the light emitting surface 14a.

上記の構成によれば、側面導電体７３がｐ型半導体１４ｐ、発光層１５、ｎ型半導体１４ｎの側面を経由して基板１１のｎ電極１１ｎと電気的に接続されているため、より確実に側面導電体７３が光出射面１４ａ上を横切ることがなくなり、側面導電体７３の影による照度分布のムラを低減することができる。
また、側面導電体７３をｐ型半導体１４ｐ、発光層１５、ｎ型半導体１４ｎの側面に配置しているので、容易に側面導電体７３を形成することができ、照明装置７０Ｒ、７０Ｇ、７０Ｂを容易に製造することができる。 According to the above configuration, the side conductor 73 is electrically connected to the n-electrode 11n of the substrate 11 via the side surfaces of the p-type semiconductor 14p, the light emitting layer 15, and the n-type semiconductor 14n. The side conductor 73 does not cross over the light emitting surface 14a, and unevenness in the illuminance distribution due to the shadow of the side conductor 73 can be reduced.
Further, since the side conductor 73 is disposed on the side surfaces of the p-type semiconductor 14p, the light emitting layer 15, and the n-type semiconductor 14n, the side conductor 73 can be easily formed, and the lighting devices 70R, 70G, and 70B can be formed. It can be manufactured easily.

なお、本発明の技術範囲は上記実施形態に限定されるものではなく、本発明の趣旨を逸脱しない範囲において種々の変更を加えることが可能である。
例えば、上記の実施の形態においては、この発明を３板式のプロジェクタに適応して説明したが、この発明は３板式のプロジェクタに限られることなく、単板式のプロジェクタなどその他各種のプロジェクタに適応できるものである。
また、上記の実施の形態においては、照明装置が１つのＬＥＤチップを備えた構成に適応して説明したが、この構成に限られることなく、複数のＬＥＤチップをアレイ状に配列した照明装置など、その他各種の構成に適応して説明することができるものである。 The technical scope of the present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the present invention.
For example, in the above-described embodiment, the present invention has been described with reference to a three-plate projector. However, the present invention is not limited to a three-plate projector, and can be applied to various other projectors such as a single-plate projector. Is.
In the above-described embodiment, the lighting device has been described so as to be adapted to the configuration including one LED chip. However, the lighting device is not limited to this configuration, and the lighting device includes a plurality of LED chips arranged in an array. It can be explained by adapting to various other configurations.

本発明におけるプロジェクタの全体構成を示す概略図である。1 is a schematic diagram illustrating an overall configuration of a projector according to the present invention. 本発明における照明装置の全体構成を示す概略図である。It is the schematic which shows the whole structure of the illuminating device in this invention. 本発明における照明装置の別の形態に係る全体構成を示す概略図である。It is the schematic which shows the whole structure which concerns on another form of the illuminating device in this invention. 本発明における照明装置の別の形態に係る全体構成を示す概略図である。It is the schematic which shows the whole structure which concerns on another form of the illuminating device in this invention.

符号の説明Explanation of symbols

１・・・プロジェクタ、 １０Ｒ、１０Ｇ、１０Ｂ、６０Ｒ、６０Ｇ、６０Ｂ、７０Ｒ、７０Ｇ、７０Ｂ・・・照明装置（光源）、 １２ｒ、１２ｇ、１２ｂ、６２ｒ、６２ｇ、６２ｂ、７２ｒ、７２ｇ、７２ｂ・・・ＬＥＤチップ（固体発光素子）、１４ａ・・・光出射面、 １４ｎ・・・ｎ型半導体（一方の導電型の半導体）、 １４ｐ・・・ｐ型半導体（他方の導電型の半導体）、 １５・・・発光層（発光部）、 １６ｎ・・・拡散電極（第１の電極）、 １６ｐ・・・ｐ電極（第２の電極）、 １７・・・ボンディングワイヤ（導電部材）、 ２０Ｒ、２０Ｇ、２０Ｂ・・・液晶ライトバルブ（光変調手段） 、４０・・・投射レンズ（投射手段）、６３・・・貫通導電体（導電部材）、７３・・・側面導電体（導電部材）   1 ... Projector, 10R, 10G, 10B, 60R, 60G, 60B, 70R, 70G, 70B ... Illumination device (light source), 12r, 12g, 12b, 62r, 62g, 62b, 72r, 72g, 72b ..LED chip (solid state light emitting element), 14a... Light emitting surface, 14n... N type semiconductor (one conductivity type semiconductor), 14p... P type semiconductor (the other conductivity type semiconductor), 15 ... light emitting layer (light emitting part), 16n ... diffusion electrode (first electrode), 16p ... p electrode (second electrode), 17 ... bonding wire (conductive member), 20R, 20G, 20B ... liquid crystal light valve (light modulation means), 40 ... projection lens (projection means), 63 ... penetrating conductor (conductive member), 73 ... side conductor (conductive member)

Claims (7)

一方の導電型の半導体および他方の導電型の半導体の間に形成された光を出射する発光部と、前記一方の導電型の半導体に電流を供給する第１の電極と、前記他方の導電型の半導体に電流を供給する第２の電極と、を備え、
前記一方の導電型の半導体に設けられた光出射面から光を出射させる固体発光素子であって、
外部から前記第１の電極に電流を供給する導電部材が、前記光出射面上の外縁と接する領域において、前記第１の電極と接続されていることを特徴とする固体発光素子。 A light emitting portion that emits light formed between one conductivity type semiconductor and the other conductivity type semiconductor, a first electrode that supplies current to the one conductivity type semiconductor, and the other conductivity type A second electrode for supplying a current to the semiconductor of
A solid-state light emitting device that emits light from a light emitting surface provided in the one conductivity type semiconductor,
A solid-state light-emitting element, wherein a conductive member that supplies current to the first electrode from the outside is connected to the first electrode in a region in contact with an outer edge on the light emitting surface. 一方の導電型の半導体および他方の導電型の半導体の間に形成された光を出射する発光部と、前記一方の導電型の半導体に電流を供給する第１の電極と、前記他方の導電型の半導体に電流を供給する第２の電極と、を備え、
前記他方の導電型の半導体が被実装対象と対向するように実装される固体発光素子であって、
前記第１の電極に電流を供給する導電部材が、前記一方の導電型の半導体、前記発光部および前記他方の導電型の半導体に渡り配置されていることことを特徴とする固体発光素子。 A light emitting portion that emits light formed between one conductivity type semiconductor and the other conductivity type semiconductor, a first electrode that supplies current to the one conductivity type semiconductor, and the other conductivity type A second electrode for supplying a current to the semiconductor of
A solid-state light emitting device mounted so that the semiconductor of the other conductivity type faces the mounting target,
A solid-state light-emitting element, wherein a conductive member that supplies current to the first electrode is disposed across the one conductive type semiconductor, the light emitting portion, and the other conductive type semiconductor. 前記導電部材が、前記一方の導電型の半導体、前記発光部および前記他方の導電型の半導体の内部を貫通して配置されていることを特徴とする請求項２記載の固体発光素子。   3. The solid state light emitting device according to claim 2, wherein the conductive member is disposed so as to penetrate through the one conductive type semiconductor, the light emitting portion, and the other conductive type semiconductor. 前記導電部材が、前記一方の導電型の半導体、前記発光部および前記他方の導電型の半導体の側面に配置されていることを特徴とする請求項２記載の固体発光素子。   3. The solid state light emitting device according to claim 2, wherein the conductive member is disposed on a side surface of the one conductive type semiconductor, the light emitting portion, and the other conductive type semiconductor. 前記第１の電極と前記導電部材とが、前記一方の導電型の半導体における光出射面上の外縁と接する領域で接続されていることを特徴とする請求項２または３に記載の固体発光素子。   4. The solid-state light-emitting element according to claim 2, wherein the first electrode and the conductive member are connected in a region in contact with an outer edge on a light emitting surface of the one conductive type semiconductor. . 前記第１の電極が透明材料からなることを特徴とする請求項１から５のいずれかに記載の固体発光素子。   6. The solid state light emitting device according to claim 1, wherein the first electrode is made of a transparent material. 光源と、該光源からの光を変調する光変調手段と、該光変調手段によって変調された光を投射する投射手段とを備えたプロジェクタであって、
前記光源が請求項１から６のいずれかに記載の固体発光素子を備えていることを特徴とするプロジェクタ。 A projector comprising: a light source; a light modulation unit that modulates light from the light source; and a projection unit that projects light modulated by the light modulation unit,
A projector, wherein the light source comprises the solid-state light emitting device according to any one of claims 1 to 6.
JP2003347097A 2003-10-06 2003-10-06 Solid light emitting element and projector Withdrawn JP2005116684A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009538447A (en) * 2006-05-26 2009-11-05 イーストマン コダック カンパニー Digital projection system with large etendue value
EP2490070A1 (en) * 2011-02-17 2012-08-22 Nikon Corporation Illuminating optical system and projector device
JP5134167B1 (en) * 2011-07-14 2013-01-30 パナソニック株式会社 Nitride semiconductor light emitting device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009538447A (en) * 2006-05-26 2009-11-05 イーストマン コダック カンパニー Digital projection system with large etendue value
EP2490070A1 (en) * 2011-02-17 2012-08-22 Nikon Corporation Illuminating optical system and projector device
US8746892B2 (en) 2011-02-17 2014-06-10 Nikon Corporation Illuminating optical system and projector device
JP5134167B1 (en) * 2011-07-14 2013-01-30 パナソニック株式会社 Nitride semiconductor light emitting device

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