TW201707913A - Method for forming vertical crack in brittle material substrate and cutting method of brittle material substrate capable of forming a vertical crack on a brittle material substrate without producing glass debris - Google Patents
Method for forming vertical crack in brittle material substrate and cutting method of brittle material substrate capable of forming a vertical crack on a brittle material substrate without producing glass debris Download PDFInfo
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- TW201707913A TW201707913A TW105118622A TW105118622A TW201707913A TW 201707913 A TW201707913 A TW 201707913A TW 105118622 A TW105118622 A TW 105118622A TW 105118622 A TW105118622 A TW 105118622A TW 201707913 A TW201707913 A TW 201707913A
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- 239000000758 substrate Substances 0.000 title claims abstract description 100
- 239000000463 material Substances 0.000 title claims abstract description 86
- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000005520 cutting process Methods 0.000 title claims description 31
- 239000011521 glass Substances 0.000 title abstract description 17
- 238000007373 indentation Methods 0.000 claims abstract description 98
- 238000003825 pressing Methods 0.000 claims abstract description 38
- 230000015572 biosynthetic process Effects 0.000 abstract description 22
- 239000010432 diamond Substances 0.000 description 18
- 229910003460 diamond Inorganic materials 0.000 description 17
- 238000000879 optical micrograph Methods 0.000 description 6
- 238000011144 upstream manufacturing Methods 0.000 description 6
- 238000005452 bending Methods 0.000 description 2
- 238000013001 point bending Methods 0.000 description 2
- 239000011324 bead Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- -1 that is Substances 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
- B28D1/22—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
- B28D1/222—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising by pressing, e.g. presses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
- B28D1/22—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
- B28D1/225—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising for scoring or breaking, e.g. tiles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
- B28D1/32—Methods and apparatus specially adapted for working materials which can easily be split, e.g. mica, slate, schist
- B28D1/327—Methods and apparatus specially adapted for working materials which can easily be split, e.g. mica, slate, schist for cutting or shearing easily splittable working materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76816—Aspects relating to the layout of the pattern or to the size of vias or trenches
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- Engineering & Computer Science (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mining & Mineral Resources (AREA)
- Mechanical Engineering (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
Abstract
Description
本發明係關於一種用以切斷脆性材料基板之方法，尤其關於一種於脆性材料基板之切斷時形成垂直裂痕之方法。 The present invention relates to a method for cutting a substrate of a brittle material, and more particularly to a method of forming a vertical crack when cutting a substrate of a brittle material.
平板顯示器面板或太陽電池面板等之製造製程一般包含將玻璃基板、陶瓷基板、半導體基板等含有脆性材料之基板(母基板)切斷之步驟。於該切斷中，廣泛地使用如下手法，即，使用鑽石尖或刀輪等刻劃工具於基板表面形成劃線，使裂痕(垂直裂痕)自該劃線沿基板厚度方向伸展。於形成劃線之情形時，既有垂直裂痕沿厚度方向完全伸展而將基板切斷之情形，亦有垂直裂痕沿厚度方向僅部分地伸展之情形。於後者之情形時，於劃線形成後，進行被稱為斷裂步驟之應力賦予。藉由斷裂步驟而使垂直裂痕沿厚度方向完全地行進，藉此將基板沿劃線切斷。 The manufacturing process of a flat panel display panel or a solar cell panel generally includes a step of cutting a substrate (mother substrate) containing a brittle material such as a glass substrate, a ceramic substrate, or a semiconductor substrate. In the cutting, a method of forming a scribe line on the surface of the substrate using a scribing tool such as a diamond tip or a cutter wheel to spread the crack (vertical crack) from the scribe line in the thickness direction of the substrate is widely used. In the case of forming a scribe line, there are cases where the vertical crack is completely extended in the thickness direction to cut the substrate, and there is also a case where the vertical crack is only partially stretched in the thickness direction. In the latter case, after the scribe line is formed, stress imparting is referred to as a rupture step. The vertical crack is completely traveled in the thickness direction by the breaking step, whereby the substrate is cut along the scribe line.
作為此種藉由劃線之形成而使垂直裂痕伸展之手法，亦稱為輔助線之於垂直裂痕伸展時成為起點(觸發)之線狀之加工痕的形成手法已為公知(例如，參照專利文獻1)。 As a method of forming a vertical crack by the formation of a scribe line, it is also known as a method of forming a line-shaped processing mark which becomes a starting point (trigger) when the vertical line is stretched (for example, a reference patent) Document 1).
[專利文獻1]日本專利特開2015-74145號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2015-74145
於使用刻劃工具形成劃線時，存在產生基板材料之微細之碎屑或粉末即玻璃屑，且附著於基板表面之情形。 When a scribe line is formed using a scribing tool, there is a case where fine debris or powder which is a substrate material, that is, glass swarf, is generated and adhered to the surface of the substrate.
例如專利文獻1中所揭示，於利用輔助線之手法之情形時，於形成切斷用之劃線時，刻劃工具賦予基板之力較小，故不易產生玻璃屑，但於形成輔助線時存在產生玻璃屑之可能性。 For example, as disclosed in Patent Document 1, in the case of using the technique of the auxiliary line, when the scribing line for cutting is formed, the force of the scribing tool to the substrate is small, so that glass swarf is less likely to occur, but when the auxiliary line is formed, There is a possibility of producing glass swarf.
本發明係鑒於上述課題而完成者，其目的在於提供一種可一面較先前更抑制玻璃屑之產生一面形成垂直裂痕之方法。 The present invention has been made in view of the above problems, and it is an object of the invention to provide a method for forming a vertical crack on the side of the glass swarf which is suppressed more than before.
為解決上述課題，技術方案1之發明之特徵在於：其係將脆性材料基板沿厚度方向切斷時於切斷位置形成垂直裂痕之方法，且具備：溝槽線形成步驟，其係於上述脆性材料基板之一主面上形成線狀之槽部即溝槽線；及壓痕形成步驟，其係藉由利用特定之按壓體局部地按壓上述脆性材料基板之上述溝槽線之附近而形成壓痕；於上述溝槽線形成步驟中，以於上述溝槽線之正下方維持無裂痕狀態之方式形成上述溝槽線，且伴隨上述壓痕形成步驟中之上述壓痕之形成，使自上述壓痕延伸之微裂痕到達上述溝槽線之下方，藉此，使上述垂直裂痕自上述溝槽線沿上述厚度方向伸展。 In order to solve the above problems, the invention of claim 1 is characterized in that the method of forming a vertical crack at a cutting position when the brittle material substrate is cut in the thickness direction, and a groove line forming step of the brittleness a linear groove portion, that is, a groove line is formed on one main surface of the material substrate; and an indentation forming step of forming a pressure by locally pressing the vicinity of the groove line of the brittle material substrate with a specific pressing body In the groove line forming step, the groove line is formed so as to maintain a crack-free state directly under the groove line, and the formation of the indentation in the indentation forming step is performed from the above The microcracks extending from the indentation reach below the groove line, whereby the vertical cracks extend from the groove line in the thickness direction.
技術方案2之發明係如技術方案1之脆性材料基板中之垂直裂痕之形成方法，其中上述特定之按壓體之前端部呈現錐狀，且於上述壓痕形成步驟中，藉由利用上述錐狀之上述前端部按壓上述脆性材料基板而形成上述壓痕。 The invention of claim 2 is the method for forming a vertical crack in the brittle material substrate according to claim 1, wherein the front end portion of the specific pressing body has a tapered shape, and in the step of forming the indentation, by using the tapered shape The front end portion presses the brittle material substrate to form the indentation.
技術方案3之發明係如技術方案2之脆性材料基板中之垂直裂痕之形成方法，其中上述特定之按壓體之上述前端部呈現圓錐狀。 The invention of claim 3 is the method for forming a vertical crack in the brittle material substrate according to claim 2, wherein the front end portion of the specific pressing body has a conical shape.
技術方案4之發明係如技術方案1至3中任一項之脆性材料基板中之垂直裂痕之形成方法，其中將上述壓痕形成於上述溝槽線之上述垂直裂 痕之預定伸展方向相反側附近。 The invention of claim 4 is the method for forming a vertical crack in a brittle material substrate according to any one of claims 1 to 3, wherein the indentation is formed on the vertical crack of the groove line The mark is intended to be near the opposite side of the extension direction.
技術方案5之發明之特徵在於：其係將脆性材料基板沿厚度方向切斷之方法，且具備：垂直裂痕形成步驟，其係藉由如技術方案1至4中任一項之垂直裂痕之形成方法而於上述脆性材料基板形成垂直裂痕；及斷裂步驟，其係沿上述垂直裂痕使上述脆性材料基板斷裂。 The invention of claim 5 is characterized in that it is a method of cutting a brittle material substrate in a thickness direction, and has a vertical crack forming step by forming a vertical crack as in any one of claims 1 to 4. And forming a vertical crack on the brittle material substrate; and a breaking step of breaking the brittle material substrate along the vertical crack.
根據技術方案1至5之發明，可於脆性材料基板之預先規定之切斷位置確實且不產生玻璃屑地使垂直裂痕伸展。 According to the inventions of claims 1 to 5, the vertical crack can be stretched at a predetermined cutting position of the brittle material substrate without causing the glass swarf.
100‧‧‧按壓體 100‧‧‧ Pressing body
101‧‧‧前端部 101‧‧‧ front end
150‧‧‧刻劃工具 150‧‧‧ scribing tools
151‧‧‧鑽石尖 151‧‧‧ diamond tip
152‧‧‧柄 152‧‧‧ handle
AR1‧‧‧箭頭 AR1‧‧‧ arrow
AR2‧‧‧箭頭 AR2‧‧‧ arrow
AR3‧‧‧箭頭 AR3‧‧‧ arrow
AR4‧‧‧箭頭 AR4‧‧‧ arrow
AR5‧‧‧箭頭 AR5‧‧‧ arrow
AX2‧‧‧軸方向 AX2‧‧‧ axis direction
d‧‧‧距離 D‧‧‧distance
DA‧‧‧移動方向 DA‧‧‧ moving direction
DT‧‧‧厚度方向 DT‧‧‧ thickness direction
g‧‧‧間隔 G‧‧‧ interval
ID‧‧‧壓痕 ID‧‧‧Indentation
MC‧‧‧微裂痕 MC‧‧‧microcrack
PP‧‧‧頂點 PP‧‧‧ vertex
PS‧‧‧稜線 PS‧‧‧ ridgeline
PF2‧‧‧刀尖 PF2‧‧‧ tip
r‧‧‧半徑 R‧‧‧ Radius
R‧‧‧半徑 R‧‧‧ Radius
RE‧‧‧微裂痕產生區域 RE‧‧‧microcrack producing area
RE1‧‧‧(微裂痕產生區域與溝槽線之)重疊區域 RE1‧‧‧ (micro-crack generation area and groove line) overlap area
SD1‧‧‧頂面 SD1‧‧‧ top surface
SD2‧‧‧側面 SD2‧‧‧ side
SD3‧‧‧側面 SD3‧‧‧ side
SF1‧‧‧一主面 SF1‧‧‧ main face
SF2‧‧‧另一主面 SF2‧‧‧ another main face
T1‧‧‧起點 Starting point for T1‧‧
T2‧‧‧終點 T2‧‧‧ end point
TL‧‧‧溝槽線 TL‧‧‧ trench line
VC‧‧‧垂直裂痕 VC‧‧‧ vertical crack
W‧‧‧脆性材料基板 W‧‧‧Battery material substrate
圖1係例示溝槽線TL形成後之狀況之脆性材料基板W之俯視圖。 FIG. 1 is a plan view showing a brittle material substrate W in a state after the groove line TL is formed.
圖2(a)、(b)係概略地表示用於形成溝槽線TL之刻劃工具150之構成之圖。 2(a) and 2(b) are diagrams schematically showing the configuration of the scribing tool 150 for forming the groove line TL.
圖3係包含溝槽線TL之垂直剖面之zx部分剖視圖。 3 is a partial zx cross-sectional view of a vertical section including a groove line TL.
圖4係模式性表示使按壓體100下降時之狀況之zx部分剖視圖。 Fig. 4 is a partial cross-sectional view showing a state in which the pressing body 100 is lowered in a zx mode.
圖5係模式性表示藉由按壓體100形成壓痕ID之狀況之zx部分剖視圖。 FIG. 5 is a partial cross-sectional view showing a state in which an indentation ID is formed by the pressing body 100 in a zx manner.
圖6係對玻璃基板使用前端部101呈現圓錐狀之按壓體100形成壓痕ID之情形時之關於壓痕ID附近的光學顯微鏡像。 FIG. 6 is an optical microscope image in the vicinity of the indentation ID when the indentation ID is formed by the pressing body 100 having the conical shape at the tip end portion 101 of the glass substrate.
圖7係模式性表示於溝槽線TL附近形成有壓痕ID之情形之狀況之圖。 Fig. 7 is a view schematically showing a state in which an indentation ID is formed in the vicinity of the groove line TL.
圖8係於預先形成有溝槽線TL之玻璃基板上形成有壓痕ID之情形時之關於壓痕ID附近的光學顯微鏡像。 Fig. 8 is an optical microscope image in the vicinity of the indentation ID when the indentation ID is formed on the glass substrate on which the groove line TL is formed in advance.
圖9係表示藉由壓痕ID之形成而使垂直裂痕VC伸展之狀況之脆性材料基板W之俯視圖。 Fig. 9 is a plan view showing the brittle material substrate W in a state in which the vertical crack VC is stretched by the formation of the indentation ID.
圖10係表示藉由壓痕ID之形成而使垂直裂痕VC伸展之狀況之脆性材料基板W之俯視圖。 Fig. 10 is a plan view showing the brittle material substrate W in a state in which the vertical crack VC is stretched by the formation of the indentation ID.
圖11係表示負載與所形成之壓痕ID之直徑之關係的曲線圖。 Figure 11 is a graph showing the relationship between the load and the diameter of the formed indentation ID.
圖12係表示負載與所形成之最大裂痕長度之關係的曲線圖。 Figure 12 is a graph showing the relationship between the load and the maximum crack length formed.
圖13係表示使用前端部101呈現四角錐狀之按壓體100形成壓痕，且於溝槽線TL之正下方使垂直裂痕伸展之情形的光學顯微鏡像。 FIG. 13 is a view showing an optical microscope image in which the pressing body 100 having the quadrangular pyramid shape is formed by the tip end portion 101 to form an indentation, and the vertical crack is stretched directly under the groove line TL.
以下所示之本發明之實施形態之方法係於脆性材料基板W之特定位置(切斷位置)形成用以切斷之垂直裂痕者。概略而言，該方法係藉由被稱為溝槽線之加工槽於切斷位置之形成、及繼而局部壓痕於該溝槽線附近之形成，而使垂直裂痕自溝槽線朝向基板厚度方向伸展者。再者，於本實施形態中，所謂溝槽線係指其正下方成為垂直裂痕之形成位置之微細之線狀之槽部(凹部)。 The method of the embodiment of the present invention shown below forms a vertical crack for cutting at a specific position (cutting position) of the brittle material substrate W. Roughly speaking, the method is to form a vertical crack from the groove line toward the thickness of the substrate by forming a processing groove called a groove line at the cutting position and then locally indenting the vicinity of the groove line. Direction stretcher. In the present embodiment, the groove line means a fine linear groove portion (concave portion) which is a position at which the vertical crack is formed immediately below.
以下，以對於矩形狀之脆性材料基板W預先設定與一組對邊平行之複數個切斷位置(切斷線)之情形為例進行說明。又，於用以說明之圖中適當地標註有右手系之xyz座標，該右手系之xyz座標係將切斷位置之排列方向設為x軸正方向，將溝槽線TL之形成進展方向設為y軸正方向，且將鉛垂上方設為z軸正方向。 Hereinafter, a case where a plurality of cutting positions (cutting lines) parallel to a pair of opposite sides are set in advance for the rectangular brittle material substrate W will be described as an example. Further, in the figure for illustration, the xyz coordinate of the right-handed system is appropriately labeled, and the xyz coordinate system of the right-handed system sets the arrangement direction of the cutting position to the positive direction of the x-axis, and sets the direction in which the groove line TL is formed. The positive direction of the y-axis and the upper vertical direction are set to the positive z-axis direction.
<溝槽線之形成> <Formation of groove lines>
圖1係例示溝槽線TL形成後之狀況之脆性材料基板W之俯視圖(xy平面圖)。圖2係概略地表示用於形成溝槽線TL之刻劃工具150之構成之圖。圖3係包含溝槽線TL之垂直剖面之zx部分剖視圖。圖1所示之溝槽線TL之形成位置相當於自脆性材料基板W之一主面(上表面)SF1側俯視脆性材料基板W之情形時之切斷位置。 FIG. 1 is a plan view (xy plan view) of the brittle material substrate W in a state in which the groove line TL is formed. FIG. 2 is a view schematically showing the configuration of the scribing tool 150 for forming the groove line TL. 3 is a partial zx cross-sectional view of a vertical section including a groove line TL. The formation position of the groove line TL shown in FIG. 1 corresponds to a cutting position when the brittle material substrate W is viewed from the main surface (upper surface) SF1 side of the brittle material substrate W.
於本實施形態中，於溝槽線TL之形成中使用具備鑽石尖151之刻劃工具150。鑽石尖151係例如圖2所示呈現角錐台形狀，且設置有頂面SD1(第1面)與包圍頂面SD1之複數個面。更詳細而言，如圖2(b)所 示，該等複數個面包含側面SD2(第2面)及側面SD3(第3面)。頂面SD1、側面SD2及SD3係朝向互不相同之方向，且相互鄰接。於鑽石尖151，藉由包含側面SD2及SD3之稜線PS、與頂面SD1、側面SD2及SD3之3個面所成之頂點PP而形成刀尖PS。如圖2(a)所示，鑽石尖151以頂面SD1成為最下端部之態樣保持於呈現棒狀(柱狀)之柄152之一端部側。 In the present embodiment, the scribing tool 150 having the diamond tip 151 is used for forming the groove line TL. The diamond tip 151 has a truncated cone shape as shown in FIG. 2, and is provided with a top surface SD1 (first surface) and a plurality of surfaces surrounding the top surface SD1. In more detail, as shown in Figure 2(b) The plurality of faces include side surface SD2 (second surface) and side surface SD3 (third surface). The top surface SD1, the side surfaces SD2, and the SD3 are oriented in mutually different directions and are adjacent to each other. The blade tip 151 is formed by the apex PP including the ridge line PS of the side faces SD2 and SD3 and the three faces of the top surface SD1, the side faces SD2, and SD3. As shown in Fig. 2(a), the diamond tip 151 is held on one end side of the rod-shaped (columnar) shank 152 in such a manner that the top surface SD1 becomes the lowermost end portion.
於使用刻劃工具150之情形時，如圖2(a)所示，於柄152之軸方向AX2自鉛垂方向朝向移動方向DA前方(y軸正方向)傾斜特定之角度之狀態下、亦即以使頂面SD1朝向移動方向DA後方(y軸負方向)之姿勢，使鑽石尖151抵接於脆性材料基板W之上表面SF1。繼而，一面保持該抵接狀態一面使刻劃工具150朝向移動方向DA前方移動，藉此，使鑽石尖151之刀尖PF2滑動。藉此，產生沿鑽石尖151之移動方向DA之塑性變形。於本實施形態中，將產生該塑性變形之鑽石尖151之滑動動作亦稱為鑽石尖151之刻劃動作。 When the scribing tool 150 is used, as shown in FIG. 2(a), in the state in which the axial direction AX2 of the shank 152 is inclined from the vertical direction toward the front in the moving direction DA (the positive direction of the y-axis), In other words, the diamond tip 151 is brought into contact with the upper surface SF1 of the brittle material substrate W in a posture in which the top surface SD1 faces the rear of the movement direction DA (the negative direction of the y-axis). Then, while the contact state is maintained, the scribing tool 150 is moved forward in the moving direction DA, whereby the blade edge PF2 of the diamond tip 151 is slid. Thereby, plastic deformation along the moving direction DA of the diamond tip 151 is generated. In the present embodiment, the sliding action of the diamond tip 151 which produces the plastic deformation is also referred to as the scribing action of the diamond tip 151.
如圖1及圖3所示，溝槽線TL係作為沿y軸方向延伸之微細之線狀之槽部形成於脆性材料基板W之上表面SF1。溝槽線TL係作為藉由於將刻劃工具150之姿勢設為相對於移動方向DA對稱之狀態下，使鑽石尖151滑動而於脆性材料基板W之上表面SF1產生之塑性變形之結果而形成。於該情形時，如圖3中模式性所示，溝槽線TL大致作為與其延伸方向垂直之剖面之形狀為線對稱之槽部而形成。 As shown in FIGS. 1 and 3, the groove line TL is formed as a fine linear groove portion extending in the y-axis direction on the upper surface SF1 of the brittle material substrate W. The groove line TL is formed as a result of the plastic deformation of the upper surface SF1 of the brittle material substrate W by sliding the diamond tip 151 in a state where the posture of the scribing tool 150 is symmetrical with respect to the movement direction DA. . In this case, as schematically shown in FIG. 3, the groove line TL is formed substantially as a groove portion which is line-symmetric in shape of a cross section perpendicular to the extending direction.
如圖1所示，溝槽線TL於脆性材料基板W之上表面SF1上所規定之切斷位置，在以箭頭AR1表示之y軸正方向上，自起點T1形成至終點T2。以下，將溝槽線TL上相對接近起點T1之範圍亦稱為上游側，將相對接近終點T2之範圍亦稱為下游側。 As shown in FIG. 1, the groove line TL is formed at a cutting position defined on the upper surface SF1 of the brittle material substrate W, and is formed from the starting point T1 to the end point T2 in the positive direction of the y-axis indicated by an arrow AR1. Hereinafter, the range on the groove line TL relatively close to the start point T1 is also referred to as the upstream side, and the range relatively close to the end point T2 is also referred to as the downstream side.
再者，於圖1中，將溝槽線TL之起點T1及終點T2設為自脆性材料基板W之端部略微隔開之位置，但此情形並非必需之態樣，亦可根據 設為切斷對象之脆性材料基板W之種類或切斷後之單片之用途等而將其中任一者或兩者適當地設為脆性材料基板W之端部位置。但，將起點T1設為脆性材料基板W之端部之態樣係與如圖1中所例示將自端部略微隔開之位置設為起點T1之情形相比，施加至刻劃工具150之刀尖PF2上之衝擊變大，故必須留意刀尖PF2之壽命之方面及意外地引起垂直裂痕之產生之方面。 In addition, in FIG. 1, the start point T1 and the end point T2 of the groove line TL are set to be slightly separated from the end portion of the brittle material substrate W, but this case is not essential, and may be based on The type of the brittle material substrate W to be cut, the use of the single piece after cutting, or the like is appropriately set as the end position of the brittle material substrate W. However, the state in which the starting point T1 is set to the end portion of the brittle material substrate W is applied to the scribing tool 150 as compared with the case where the position slightly separated from the end portion is set as the starting point T1 as illustrated in FIG. The impact on the tip PF2 becomes large, so it is necessary to pay attention to the aspect of the life of the cutting edge PF2 and the aspect of accidentally causing the occurrence of vertical cracks.
又，於複數個切斷位置之各者上之溝槽線TL之形成既可為於具備一個刻劃工具150之未圖示之加工裝置中使用該刻劃工具150依次地形成之態樣，亦可為使用複數個溝槽線TL形成用之加工裝置同時並行地形成之態樣。 Further, the groove line TL formed on each of the plurality of cutting positions may be formed by sequentially using the scribing tool 150 in a processing device (not shown) having one scribing tool 150. It is also possible to form a processing apparatus for forming a plurality of groove lines TL at the same time in parallel.
於溝槽線TL之形成時，將刻劃工具150所施加之負載(相當於將刻劃工具150自鉛垂上方朝向脆性材料基板W之上表面SF1壓入之力)設定為即便可確實地形成溝槽線TL，但於脆性材料基板W之厚度方向DT上不產生自該溝槽線TL起之垂直裂痕之伸展(圖3)。 When the groove line TL is formed, the load applied by the scribing tool 150 (corresponding to the force that the scoring tool 150 is pressed from the upper side toward the upper surface SF1 of the brittle material substrate W) is set to be surely The groove line TL is formed, but the stretching of the vertical crack from the groove line TL is not generated in the thickness direction DT of the brittle material substrate W (FIG. 3).
換言之，溝槽線TL之形成係以於溝槽線TL之正下方，在脆性材料基板W與溝槽線TL交叉之方向上維持連續地相連之狀態(無裂痕狀態)之方式進行。再者，於以該對應而形成溝槽線TL之情形時，於脆性材料基板W之溝槽線TL附近(自溝槽線TL起約5μm~10μm左右以內之範圍)，作為塑性變形之結果而殘留有內部應力。 In other words, the groove line TL is formed so as to be in a state in which the brittle material substrate W and the groove line TL intersect continuously in a state of continuous connection (no crack state) immediately below the groove line TL. In the case where the groove line TL is formed in this correspondence, the vicinity of the groove line TL of the brittle material substrate W (the range from about 5 μm to 10 μm from the groove line TL) is a result of plastic deformation. There is residual internal stress.
該溝槽線TL之形成可藉由例如將刻劃工具150施加之負載設定為相較使用相同刻劃工具150形成伴有垂直裂痕之伸展之劃線之情形更小的值而實現。 The formation of the groove line TL can be achieved by, for example, setting the load applied by the scoring tool 150 to a value smaller than the case where the same scoring tool 150 is used to form the scribe line with the vertical crack.
於無裂痕狀態下即便形成有溝槽線TL，亦不存在自該溝槽線TL起之垂直裂痕之伸展，故即便彎曲力矩作用於脆性材料基板W，亦與形成有垂直裂痕之情形相比，更不易產生沿著溝槽線TL之切斷。 Even if the groove line TL is formed in the crack-free state, there is no extension of the vertical crack from the groove line TL, so even if the bending moment acts on the brittle material substrate W, it is compared with the case where the vertical crack is formed. It is less likely to cause cutting along the groove line TL.
<壓痕之形成與垂直裂痕之伸展> <Formation of indentations and stretching of vertical cracks>
若以上述態樣形成溝槽線TL，則繼而於溝槽線TL之附近位置局部地形成壓痕。該壓痕之形成係藉由使包含與脆性材料基板W相比具有更充分之硬度的材料之特定之按壓體下降，自上方按壓脆性材料基板W之上表面SF1而進行。 When the groove line TL is formed in the above-described manner, an indentation is locally formed in the vicinity of the groove line TL. The formation of the indentation is performed by lowering the surface SF1 of the upper surface of the brittle material substrate W from above by lowering the specific pressing body including the material having more sufficient hardness than the brittle material substrate W.
圖4係模式性表示使按壓體100下降時之狀況之zx部分剖視圖，圖5係模式性表示藉由按壓體100形成壓痕ID之狀況之zx部分剖視圖。 4 is a partial cross-sectional view showing a state in which the pressing body 100 is lowered, and FIG. 5 is a partial cross-sectional view showing a state in which the indentation ID is formed by the pressing body 100.
在將脆性材料基板W水平地配置之狀態下，如圖4所示，若於z軸負方向之最下端部藉由未圖示之移動機構之動作而使具有圓錐狀之前端部101之按壓體100朝向z軸負方向下降，則前端部101立刻抵接於脆性材料基板W之上表面SF1。於該抵接之後，如圖5中箭頭AR3所示若亦進而使按壓體100下降，則前端部101被壓入至脆性材料基板W，藉此，脆性材料基板W塑性變形，形成凹部、即壓痕ID。進而，於該壓痕ID之周圍形成大量之微裂痕MC。於脆性材料基板W上，通常，微裂痕MC將壓痕ID之外緣部之任意位置作為起點，相對於脆性材料基板W之上表面SF1以特定之深度(即於相對於上表面SF1之垂直方向)伸展。於圖5中，將該微裂痕MC模式性表示為斜線部。 In a state in which the brittle material substrate W is horizontally arranged, as shown in FIG. 4, the lower end portion in the negative z-axis direction is pressed by the conical front end portion 101 by the operation of a moving mechanism (not shown). When the body 100 is lowered in the negative direction of the z-axis, the distal end portion 101 immediately abuts against the upper surface SF1 of the brittle material substrate W. After the contact, if the pressing body 100 is further lowered as indicated by an arrow AR3 in FIG. 5, the tip end portion 101 is pressed into the brittle material substrate W, whereby the brittle material substrate W is plastically deformed to form a concave portion, that is, Indentation ID. Further, a large number of micro-cracks MC are formed around the indentation ID. On the brittle material substrate W, generally, the microcrack MC takes an arbitrary position of the outer edge portion of the indentation ID as a starting point, and has a specific depth with respect to the upper surface SF1 of the brittle material substrate W (that is, perpendicular to the upper surface SF1). Direction) stretch. In FIG. 5, the microcrack MC is schematically represented as a hatched portion.
於該情形時，壓痕ID之大小及微裂痕MC之長度(最大伸展長度)成為與按壓體100之形狀及作用於按壓體100之負載相對應者。 In this case, the size of the indentation ID and the length (maximum extension length) of the microcracks MC correspond to the shape of the pressing body 100 and the load acting on the pressing body 100.
按壓體100之材質可根據脆性材料基板W之材質而適當選定，但根據硬度較高且具備通用性及取得容易性之觀點，較佳為包含鑽石。 The material of the pressing body 100 can be appropriately selected depending on the material of the brittle material substrate W. However, it is preferable to contain diamonds from the viewpoint of high hardness, versatility, and ease of availability.
圖6係對作為脆性材料基板W之一種之玻璃基板使用前端部101呈現圓錐狀之按壓體100形成壓痕ID之情形時之關於壓痕ID附近的光學顯微鏡像。但，溝槽線TL尚未形成。於圖6中，確認俯視時大致圓形狀之壓痕ID，並且亦確認大量之微裂痕MC自壓痕ID之外緣部朝向外側無規地延伸。 FIG. 6 is an optical microscope image in the vicinity of the indentation ID when the indentation ID is formed by the pressing body 100 having the conical shape at the distal end portion 101 of the glass substrate which is one of the brittle material substrates W. However, the groove line TL has not been formed yet. In Fig. 6, the indentation ID of a substantially circular shape in plan view was confirmed, and it was also confirmed that a large number of microcracks MC randomly extended from the outer edge portion of the indentation ID toward the outer side.
再者，於圖6中，一眼看上去，微裂痕MC沿該玻璃基板之上表面 形成，但於圖6中觀察到呈現於玻璃基板之上表面SF1之微裂痕MC。 Furthermore, in Fig. 6, at first glance, the microcrack MC is along the upper surface of the glass substrate. Formed, but the microcrack MC present on the upper surface SF1 of the glass substrate was observed in FIG.
圖7係模式性表示於溝槽線TL附近形成有壓痕ID之情形時之狀況之圖。又，圖8係於預先形成溝槽線TL之脆性材料基板W之一種即玻璃基板上形成有壓痕ID之情形時之關於壓痕ID附近的光學顯微鏡像。 Fig. 7 is a view schematically showing a state in the case where an indentation ID is formed in the vicinity of the groove line TL. In addition, FIG. 8 is an optical microscope image in the vicinity of the indentation ID when the indentation ID is formed on the glass substrate which is one of the brittle material substrates W in which the groove line TL is formed in advance.
於利用按壓體100局部地按壓脆性材料基板W之情形時，如圖6中所例示，於該壓痕ID之周圍無規地形成大量之微裂痕MC。如圖7所示，此現象係指不僅於按壓體100所按壓之部位形成壓痕ID，而且該壓痕ID周圍之特定範圍成為可能產生微裂痕MC之區域即微裂痕產生區域RE。此處，微裂痕產生區域RE可認定為以將壓痕ID之中心位置、與伴隨壓痕ID之形成而產生之大量微裂痕MC中之於俯視時最大長度者所到達之位置之間加以連結之線作為半徑之圓形區域中之除壓痕ID以外的區域。 When the brittle material substrate W is partially pressed by the pressing body 100, as illustrated in FIG. 6, a large number of micro-cracks MC are randomly formed around the indentation ID. As shown in FIG. 7, this phenomenon means that an indentation ID is formed not only at a portion pressed by the pressing body 100, but also a specific range around the indentation ID becomes a microcrack generation region RE which is a region where microcracks MC may occur. Here, the microcrack generation region RE can be determined to be connected between the center position of the indentation ID and the position reached by the maximum length in the plan view of the large number of microcracks MC generated by the formation of the indentation ID. The line is an area other than the indentation ID in the circular area of the radius.
於本實施形態中，以藉由延伸至溝槽線TL之下方為止而於俯視時與溝槽線TL重疊之態樣產生微裂痕MC之方式，形成壓痕ID。若根據其他見解，則此情形亦可謂於以上述態樣形成溝槽線TL之後，以微裂痕產生區域RE之一部分區域與溝槽線TL重疊之方式形成壓痕ID。於圖7中，將微裂痕產生區域RE中之與溝槽線TL之重疊區域RE1以粗虛線包圍。 In the present embodiment, the indentation ID is formed so as to cause microcracks MC in a state in which it is overlapped with the groove line TL in a plan view by extending below the groove line TL. According to other findings, in this case, after the groove line TL is formed in the above-described manner, the indentation ID is formed such that a portion of the micro-crack generation region RE overlaps the groove line TL. In FIG. 7, the overlap region RE1 with the groove line TL in the micro-crack generation region RE is surrounded by a thick broken line.
再者，壓痕ID於俯視時為半徑r之圓，且於將微裂痕產生區域RE假設為於其外側以固定之寬度形成之環形區域之情形時，在壓痕ID之半徑r、微裂痕產生區域RE之最外側之半徑R、及壓痕ID之中心與溝槽線TL之距離d之間，於r<d<R Further, the indentation ID is a circle having a radius r in a plan view, and a radius r and a microcrack in the indentation ID when the microcrack generation region RE is assumed to be an annular region formed at a fixed width on the outer side thereof. The radius R of the outermost side of the generation region RE and the distance d between the center of the indentation ID and the groove line TL are at r<d<R
之關係成立時，可謂微裂痕產生區域RE之一部分區域與溝槽線TL重疊。再者，關於前者，在壓痕ID與溝槽線TL之間隔g、半徑r、距離d、及半徑R之間，亦可謂 g=d-r<R-r When the relationship is established, it can be said that a portion of the micro-crack generation region RE overlaps with the groove line TL. Furthermore, regarding the former, between the indentation ID and the groove line TL, the distance g, the radius r, the distance d, and the radius R may be g=d-r<R-r
之關係成立。 The relationship is established.
在微裂痕產生區域RE與溝槽線TL重疊之條件下形成有壓痕ID之情形時，延伸至重疊區域RE1之微裂痕MC以適當之概率產生。若此種微裂痕MC到達溝槽線TL正下方之殘留內部應力之存在區域，則此情形成為開端，產生溝槽線TL附近之殘留內部應力之釋放，從而產生自溝槽線TL起之垂直裂痕VC之伸展。此情形係本實施形態之手法所產生之垂直裂痕VC之伸展之詳情。於圖8中，一微裂痕MC到達溝槽線TL之形成部位(圖中以虛線所示)，且觀察垂直裂痕VC自該到達部位行進之狀況。 When the indentation ID is formed under the condition that the micro-crack generation region RE overlaps with the groove line TL, the micro-crack MC extending to the overlap region RE1 is generated with an appropriate probability. If such a microcrack MC reaches the existence region of the residual internal stress immediately below the groove line TL, the situation becomes the beginning, and the release of the residual internal stress near the groove line TL occurs, thereby generating the vertical from the groove line TL. The extension of the crack VC. This case is the details of the extension of the vertical crack VC generated by the method of the present embodiment. In Fig. 8, a microcrack MC reaches a portion where the groove line TL is formed (indicated by a broken line in the drawing), and a state in which the vertical crack VC travels from the reaching portion is observed.
如此般，以微裂痕產生區域RE與溝槽線TL重疊之態樣形成壓痕ID，藉此可使垂直裂痕VC自溝槽線TL伸展。 In this manner, the indentation ID is formed in a state in which the micro-crack generating region RE overlaps with the groove line TL, whereby the vertical crack VC can be extended from the groove line TL.
再者，於圖8中例示了於溝槽線TL之左側形成有壓痕ID之情形，但壓痕ID之形成部位亦可為溝槽線TL之右側。 Further, in FIG. 8, the case where the indentation ID is formed on the left side of the groove line TL is illustrated, but the formation portion of the indentation ID may be the right side of the groove line TL.
實際上藉由壓痕ID之形成而使垂直裂痕VC即將伸展時，以確實地產生與溝槽線TL重疊之微裂痕MC之方式形成壓痕ID即可。具體而言，根據脆性材料基板W之材質或厚度等而預先實驗性地設定可使此種微裂痕MC產生之壓痕ID之形成位置(自溝槽線TL起之距離)或形成壓痕ID時施加至按壓體100之負載等條件即可。 Actually, when the vertical crack VC is about to be stretched by the formation of the indentation ID, the indentation ID may be formed so as to surely generate the microcrack MC overlapping the groove line TL. Specifically, the formation position (the distance from the groove line TL) or the indentation ID at which the indentation ID generated by the microcrack MC can be formed is experimentally set in advance based on the material or thickness of the brittle material substrate W or the like. The conditions such as the load applied to the pressing body 100 may be used.
再者，以壓痕ID與溝槽線TL重疊之方式形成壓痕ID較為欠佳。其原因在於，即便藉由溝槽線TL之形成而於已壓縮之區域重疊地形成有壓痕ID，亦不會較佳地產生微裂痕MC。 Further, it is less preferable to form the indentation ID so that the indentation ID overlaps the groove line TL. The reason for this is that even if the indentation ID is formed in a superposed manner in the compressed region by the formation of the groove line TL, the microcrack MC is not preferably generated.
圖9及圖10係表示於圖1所示之形成有溝槽線TL之脆性材料基板W，藉由壓痕ID之形成而使垂直裂痕VC伸展之狀況之脆性材料基板W之俯視圖。 FIG. 9 and FIG. 10 are plan views showing the brittle material substrate W in which the brittle material substrate W having the groove line TL shown in FIG. 1 is stretched by the formation of the indentation ID.
如圖9中以箭頭AR4所示，若於x軸方向上排列之各個溝槽線TL 之下游側附近不斷地依次形成壓痕ID，則如箭頭AR5所示於各個溝槽線TL上垂直裂痕VC依次朝向其預定伸展方向即溝槽線TL之上游側伸展。最終，如圖10所示，於所有切斷位置，產生自溝槽線TL起之垂直裂痕VC之伸展。即，壓痕ID之形成成為開端(自壓痕ID延伸之微裂痕MC成為觸發)，且於此前雖形成溝槽線TL但無裂痕狀態之脆性材料基板W之各切斷位置，形成自溝槽線TL延伸之垂直裂痕VC。 As shown by an arrow AR4 in FIG. 9, if each groove line TL is arranged in the x-axis direction The indentation ID is sequentially formed in the vicinity of the downstream side, and the vertical crack VC is sequentially extended toward the predetermined extension direction, that is, the upstream side of the groove line TL, on the respective groove lines TL as indicated by an arrow AR5. Finally, as shown in Fig. 10, at all the cutting positions, the extension of the vertical crack VC from the groove line TL is generated. In other words, the formation of the indentation ID is the beginning (the micro-cracks MC extending from the indentation ID is triggered), and the respective cutting positions of the brittle material substrate W in which the groove line TL is formed but not cracked are formed in the groove. The vertical crack VC extends from the groove line TL.
再者，垂直裂痕VC之預定伸展方向係如上所述成為朝向上游側之方向之原因在於：於使用具備鑽石尖151之刻劃工具150，形成溝槽線TL之情形時，於溝槽線TL之正下方產生之垂直裂痕VC具有朝向存在頂面SD1側之側伸展之性質。即，垂直裂痕VC具有朝向特定之一方向伸展之性質。在以於溝槽線TL上之上游側配置有鑽石尖之頂面SD1之態樣形成溝槽線TL之本實施形態中，於形成壓痕ID時，垂直裂痕VC於溝槽線TL之上游側伸展，但於相反方向垂直裂痕VC不易伸展。 Further, the reason why the predetermined stretching direction of the vertical crack VC becomes the direction toward the upstream side as described above is that the groove line TL is formed when the groove line TL is formed using the scribing tool 150 having the diamond tip 151. The vertical crack VC generated directly underneath has a property of extending toward the side on the side of the top surface SD1. That is, the vertical crack VC has a property of extending toward a specific one direction. In the present embodiment in which the groove line TL is formed on the upstream side of the groove line TL where the diamond tip top surface SD1 is disposed, the vertical crack VC is upstream of the groove line TL when the indentation ID is formed. The side is stretched, but the vertical crack VC in the opposite direction is not easy to stretch.
因此，於圖9所示之情形時，壓痕ID形成於溝槽線TL上之垂直裂痕VC之預定伸展方向之相反側附近即溝槽線TL之下游側附近。 Therefore, in the case shown in Fig. 9, the indentation ID is formed in the vicinity of the opposite side to the predetermined extension direction of the vertical crack VC on the groove line TL, that is, near the downstream side of the groove line TL.
於以本實施形態之手法企圖使垂直裂痕VC伸展之情形時，用以形成溝槽線TL之加工及用以形成壓痕ID之加工之任一者均於脆性材料基板W上僅產生塑性變形，故於各個加工時產生玻璃屑之可能性較小。即，根據本實施形態之手法，能夠無玻璃屑地使垂直裂痕VC伸展。 When the vertical crack VC is stretched in the manner of the embodiment, the processing for forming the groove line TL and the processing for forming the indentation ID are only plastically deformed on the brittle material substrate W. Therefore, it is less likely to generate glass swarf during each processing. That is, according to the method of the present embodiment, the vertical crack VC can be stretched without the swarf.
將以上述態樣於切斷位置形成有垂直裂痕VC之脆性材料基板W賦予未圖示之特定之斷裂裝置。於斷裂裝置中，藉由所謂的3點彎曲或4點彎曲之手法而使彎曲力矩作用於脆性材料基板W，藉此，進行使垂直裂痕VC伸展至脆性材料基板W之另一主面(下表面)SF2(參照圖2)為止之斷裂步驟。藉由經由該斷裂步驟而於切斷位置將脆性材料基板W切斷。 The brittle material substrate W having the vertical crack VC formed at the cutting position in the above-described manner is given a specific breaking device (not shown). In the breaking device, a bending moment is applied to the brittle material substrate W by a so-called three-point bending or four-point bending method, whereby the vertical crack VC is stretched to the other main surface of the brittle material substrate W (below The surface is NF2 (see Fig. 2). The brittle material substrate W is cut at the cutting position by the breaking step.
以上，如所說明般，根據本實施形態，於脆性材料基板之切斷位置形成溝槽線之後，於該溝槽線之附近局部地形成壓痕，此時，使自壓痕延伸之微裂痕到達至溝槽線之形成位置之下方，藉此，可於脆性材料基板之切斷位置確實且不產生玻璃屑地使垂直裂痕VC伸展。 As described above, according to the present embodiment, after the groove line is formed at the cutting position of the brittle material substrate, an indentation is locally formed in the vicinity of the groove line, and at this time, the microcrack extending from the indentation is formed. When it reaches below the formation position of the groove line, the vertical crack VC can be stretched at the cutting position of the brittle material substrate without causing the glass swarf.
(實施例1) (Example 1)
於本實施例中，已確認施加至按壓體100之負載對壓痕ID之尺寸與微裂痕MC之最大長度(以下，稱為最大裂痕長度)造成之影響。 In the present embodiment, it has been confirmed that the load applied to the pressing body 100 affects the size of the indentation ID and the maximum length of the microcrack MC (hereinafter, referred to as the maximum crack length).
具體而言，準備厚度為0.2mm之玻璃基板作為脆性材料基板W，且使用前端部101呈現圓錐狀且其開度角為122°、曲率半徑為10μm之鑽石尖作為按壓體100，將施加至按壓體100之負載分為1.3N、2.5N、3.8N、5.0N之4級而形成壓痕ID。 Specifically, a glass substrate having a thickness of 0.2 mm is prepared as the brittle material substrate W, and a diamond tip having a conical shape at the front end portion 101 and having an opening angle of 122° and a radius of curvature of 10 μm is used as the pressing body 100, and is applied to The load of the pressing body 100 is divided into four stages of 1.3N, 2.5N, 3.8N, and 5.0N to form an indentation ID.
圖11係表示負載與所形成之壓痕ID之直徑之關係之曲線圖，圖12係表示負載與所形成之最大裂痕長度之關係之曲線圖。 Figure 11 is a graph showing the relationship between the load and the diameter of the formed indentation ID, and Figure 12 is a graph showing the relationship between the load and the maximum crack length formed.
根據圖11及圖12而確認存在負載越大，則壓痕ID之尺寸與最大裂痕長度兩者變得越大之傾向。 It is confirmed from FIG. 11 and FIG. 12 that the larger the load is, the larger the size of the indentation ID and the maximum crack length become.
(實施例2) (Example 2)
於本實施例中，分析施加至按壓體100之負載、及壓痕ID(更詳細而言其中心位置)與溝槽線之距離對垂直裂痕VC之伸展所造成之影響。按壓體100及脆性材料基板W之條件設為與實施例1相同。 In the present embodiment, the influence of the load applied to the pressing body 100 and the distance between the indentation ID (more specifically, the center position thereof) and the groove line on the extension of the vertical crack VC is analyzed. The conditions of the pressing body 100 and the brittle material substrate W are the same as in the first embodiment.
具體而言，將施加至按壓體100之負載分為1.3N、2.5N、3.8N、5.0N之4級，且使壓痕中心位置與溝槽線之距離分為0μm、±10μm、±20μm、±30μm、±40μm之9級，藉此，決定施加至按壓體100之負載、與壓痕中心位置與溝槽線之距離之組合完全不同之所有36組條件。再者，所謂壓痕中心位置與溝槽線之距離成為負之情形係指與該距離成為正之情形相對於溝槽線TL為相反側形成有壓痕之情形。 而且，對預先利用刻劃工具150形成有寬度約10μm之溝槽線TL之脆性材料基板W進行於各個條件下之壓痕ID之形成。 Specifically, the load applied to the pressing body 100 is divided into four stages of 1.3N, 2.5N, 3.8N, and 5.0N, and the distance between the center of the indentation and the groove line is divided into 0 μm, ±10 μm, and ±20 μm. At least 9 levels of ±30 μm and ±40 μm, thereby determining all 36 sets of conditions in which the load applied to the pressing body 100 and the combination of the distance between the center of the indentation and the groove line are completely different. In addition, the case where the distance between the center of the indentation and the groove line is negative means that the indentation is formed on the opposite side of the groove line TL when the distance is positive. Further, the formation of the indentation ID under each condition is performed on the brittle material substrate W in which the groove line TL having a width of about 10 μm is formed in advance by the scribing tool 150.
表1中表示全部36組之自溝槽線TL起之垂直裂痕VC之伸展之有無。 Table 1 shows the presence or absence of the extension of the vertical crack VC from all of the 36 groups from the groove line TL.
於表1中，對於垂直裂痕VC伸展之條件之欄標註「○」，對於未伸展之條件之欄標註「×」。 In Table 1, "○" is attached to the column for the condition of the vertical crack VC extension, and "x" is indicated for the column of the unstretched condition.
根據表1所示之結果可知，於溝槽線TL之正上方形成壓痕ID之壓痕中心位置與溝槽線之距離為0μm之情形時垂直裂痕VC不伸展、及壓痕中心位置與溝槽線TL之距離越大則垂直裂痕VC伸展後之負載之值越大。 According to the results shown in Table 1, it can be seen that the vertical crack VC does not stretch, and the center position and groove of the indentation are formed when the distance between the center of the indentation of the indentation ID and the groove line is 0 μm directly above the groove line TL. The larger the distance of the groove line TL, the larger the value of the load after the vertical crack VC is stretched.
鑒於該結果與實施例1所示之結果，可藉由適當地設定壓痕之形成位置、與形成壓痕時施加至按壓體之負載，而接著形成溝槽線TL之後形成壓痕，藉此，可使垂直裂痕VC自溝槽線TL確實地伸展。 In view of the results and the results shown in the first embodiment, the indentation can be formed by appropriately setting the formation position of the indentation and the load applied to the pressing body when the indentation is formed, and then forming the groove line TL. The vertical crack VC can be surely stretched from the groove line TL.
<變化例> <variation>
於上述實施形態中，以按壓體100之前端部101為圓錐狀之情形為對象進行了說明，但用以使垂直裂痕伸展之壓痕形成中使用之按壓體100之前端部101之形狀並不限於此。圖13係表示使用前端部101呈現四角錐狀之按壓體100形成壓痕，且於溝槽線TL之正下方使垂直裂痕伸展之情形時的光學顯微鏡像。圖13所示之結果表明可藉由以與按 壓體100之前端部101之形狀相應之條件形成壓痕而使垂直裂痕伸展。 In the above-described embodiment, the case where the front end portion 101 of the pressing body 100 has a conical shape has been described. However, the shape of the front end portion 101 of the pressing body 100 used for forming the indentation for extending the vertical crack is not Limited to this. FIG. 13 is an optical microscope image in the case where the pressing body 100 having the quadrangular pyramid shape is formed by the tip end portion 101 to form an indentation and the vertical crack is stretched directly under the groove line TL. The results shown in Figure 13 indicate that The shape of the front end 101 of the compact 100 is corresponding to the condition to form an indentation to stretch the vertical crack.
進而，若可伴隨壓痕之形成而形成垂直裂痕，則前端部101之形狀亦可不為錐狀，例如亦可為柱狀。 Further, if the vertical crack is formed along with the formation of the indentation, the shape of the distal end portion 101 may not be tapered, and may be, for example, a columnar shape.
又，於上述實施形態中，藉由在使柄152之軸方向AX2朝向移動方向DA前方傾斜之狀態下、亦即以使頂面SD1朝向移動方向DA後方之姿勢，使鑽石尖151滑動而利用刻劃工具150形成溝槽線TL，但亦可取而代之，藉由於使柄152之軸方向AX2朝向移動方向DA後方傾斜之狀態下、亦即以頂面SD1朝向移動方向DA前方之姿勢使鑽石尖151滑動而形成溝槽線TL。 Further, in the above-described embodiment, the diamond tip 151 is slid and used in a state where the axial direction AX2 of the shank 152 is inclined forward in the moving direction DA, that is, in a posture in which the top surface SD1 is directed rearward in the moving direction DA. The scribing tool 150 forms the groove line TL, but instead, the diamond tip is made in a state in which the axial direction AX2 of the shank 152 is inclined rearward in the moving direction DA, that is, the posture in which the top surface SD1 faces the moving direction DA forward. The 151 slides to form the groove line TL.
或者，又於上述實施形態中，於溝槽線TL之形成中使用了鑽石尖151，但亦可取而代之地為藉由使呈現圓盤狀(算盤珠狀)且沿其外周均勻地具備刀尖之公知之刻劃輪於切斷位置壓接滾動而形成溝槽線TL之態樣。 Alternatively, in the above embodiment, the diamond tip 151 is used in the formation of the groove line TL, but instead, the disk tip (the abacus bead) may be provided and the blade tip may be uniformly provided along the outer periphery thereof. It is known that the scribe wheel is crimped and rolled at the cutting position to form the groove line TL.
但，該等態樣之情形係與上述實施形態不同，垂直裂痕之預定伸展方向成為溝槽線TL之下游側。因此，於該等態樣中，可藉由於溝槽線TL之上游側附近形成壓痕ID而使垂直裂痕VC伸展。 However, in the case of the above-described embodiment, the predetermined extending direction of the vertical crack is the downstream side of the groove line TL. Therefore, in the aspect, the vertical crack VC can be stretched by forming the indentation ID near the upstream side of the groove line TL.
100‧‧‧按壓體 100‧‧‧ Pressing body
101‧‧‧前端部 101‧‧‧ front end
AR3‧‧‧箭頭 AR3‧‧‧ arrow
DT‧‧‧厚度方向 DT‧‧‧ thickness direction
ID‧‧‧壓痕 ID‧‧‧Indentation
MC‧‧‧微裂痕 MC‧‧‧microcrack
SF1‧‧‧一主面 SF1‧‧‧ main face
TL‧‧‧溝槽線 TL‧‧‧ trench line
W‧‧‧脆性材料基板 W‧‧‧Battery material substrate
Claims (5)
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| JP2015-160429 | 2015-08-17 | ||
| JP2015160429A JP6648448B2 (en) | 2015-08-17 | 2015-08-17 | Method for forming vertical crack in brittle material substrate and method for cutting brittle material substrate |
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| TW201707913A true TW201707913A (en) | 2017-03-01 |
| TWI694913B TWI694913B (en) | 2020-06-01 |
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| JP (1) | JP6648448B2 (en) |
| KR (1) | KR20170021195A (en) |
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| US4140820A (en) * | 1975-04-09 | 1979-02-20 | Ppg Industries, Inc. | Method of maintaining edge strength of a piece of glass |
| JPH11195624A (en) * | 1997-12-26 | 1999-07-21 | Hitachi Cable Ltd | Manufacture of semiconductor substrate with insulating film formed by using laser irradiation |
| JP4203177B2 (en) * | 1999-03-18 | 2008-12-24 | 株式会社ベルデックス | Scribing method and apparatus |
| JP2002316829A (en) * | 2001-04-17 | 2002-10-31 | Seiko Epson Corp | Method for cutting glass substrate, method for manufacturing electro-optic device, electro-optic device, electronic apparatus and scribed groove former |
| JP4086796B2 (en) * | 2004-02-19 | 2008-05-14 | キヤノン株式会社 | Substrate cutting method |
| JP5450964B2 (en) * | 2008-02-29 | 2014-03-26 | 三星ダイヤモンド工業株式会社 | Scribing apparatus and scribing method |
| JP5067457B2 (en) * | 2010-07-29 | 2012-11-07 | 三星ダイヤモンド工業株式会社 | Scribing wheel, scribing device, and scribing method |
| TWI498293B (en) * | 2011-05-31 | 2015-09-01 | Mitsuboshi Diamond Ind Co Ltd | Scribe method, diamond point and scribe apparatus |
| JP5409726B2 (en) * | 2011-08-30 | 2014-02-05 | 三星ダイヤモンド工業株式会社 | Scribing wheel |
| KR20150014458A (en) * | 2012-04-24 | 2015-02-06 | 가부시키가이샤 토쿄 세이미쯔 | Dicing blade |
| TWI589420B (en) * | 2012-09-26 | 2017-07-01 | Mitsuboshi Diamond Ind Co Ltd | Metal multilayer ceramic substrate breaking method and trench processing tools |
| JP6201608B2 (en) * | 2013-10-08 | 2017-09-27 | 三星ダイヤモンド工業株式会社 | Scribing method |
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| MM4A | Annulment or lapse of patent due to non-payment of fees |