TW201707184A - Electrostatic discharge protection circuit and integrated circuit - Google Patents

Electrostatic discharge protection circuit and integrated circuit Download PDF

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TW201707184A
TW201707184A TW104125706A TW104125706A TW201707184A TW 201707184 A TW201707184 A TW 201707184A TW 104125706 A TW104125706 A TW 104125706A TW 104125706 A TW104125706 A TW 104125706A TW 201707184 A TW201707184 A TW 201707184A
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coupled
switch
electrostatic discharge
conductive
control
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TW104125706A
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TWI559492B (en
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黃紹璋
李宗隆
曾建欽
張大鵬
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天鈺科技股份有限公司
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Abstract

The present invention relates to an electrostatic discharge (ESD) protection circuit. The ESD protection circuit includes an ESD detection unit, an ESD unit and a switch unit. The ESD detection unit is coupled to the first conductive pad. The ESD detection unit is configured to detect whether the first conductive pad having an ESD phenomenon and outputs a detect signal. The ESD unit is configured to transmit an ESD current between a first conductive pad and a second conductive pad when the first conductive pad having the ESD phenomenon. The switch unit is coupled between the first conductive pad and a core operation circuit. The switch unit is configured to control the first conductive pad is electric conducted to or disconnected to the core operation circuit according to the detection signal. The present invention further relates an integrated circuit (IC) including the ESD protection circuit.

Description

靜電放電保護電路與積體電路Electrostatic discharge protection circuit and integrated circuit

本發明係關於一種靜電放電保護電路,且特別係關於一種於靜電放電發生時,防止靜電放電電流通入核心工作電路之靜電放電保護電路。The present invention relates to an electrostatic discharge protection circuit, and more particularly to an electrostatic discharge protection circuit for preventing an electrostatic discharge current from flowing into a core working circuit when an electrostatic discharge occurs.

積體電路(Integrated Circuit,IC)或者一些電子元件於實際使用環境中可能會遭受靜電放電(electrostatic discharge,ESD)的影響而導致損壞。例如積體電路在運輸或者組裝過程中,由於帶有靜電電荷之外部物體,例如人體、接觸積體電路之輸入/輸出端(I/O端口)時,靜電電荷迅速自外部物體轉移至輸入/輸出端,從而產生靜電放電的現象,靜電放電發生時,能夠產生較大的靜電電壓和靜電電流,該靜電電荷足以損壞積體電路內部的核心工作電路。其中,所述之核心工作電路為積體電路中全部之工作電路,例如邏輯電路、訊號處理電路等。因此必須在積體電路之輸入/輸出端之間設置低電阻旁路,用作靜電電流宣洩路徑,以阻止靜電電路進入核心工作電路。An integrated circuit (IC) or some electronic components may be damaged by electrostatic discharge (ESD) in actual use environments. For example, when the integrated circuit is transported or assembled, the electrostatic charge is quickly transferred from the external object to the input due to an external object with an electrostatic charge, such as the human body, touching the input/output terminals (I/O ports) of the integrated circuit. The output end generates an electrostatic discharge phenomenon, and when the electrostatic discharge occurs, a large electrostatic voltage and an electrostatic current can be generated, which is sufficient to damage the core working circuit inside the integrated circuit. Wherein, the core working circuit is all working circuits in the integrated circuit, such as logic circuit, signal processing circuit and the like. Therefore, a low-resistance bypass must be placed between the input/output terminals of the integrated circuit to act as an electrostatic current venting path to prevent the electrostatic circuit from entering the core operating circuit.

然而,當靜電電流自低電阻旁路進行宣洩時,部分靜電電流還是會自輸入/輸出端進入核心工作電路,由此,在靜電電流宣洩過之同時還需阻止靜電電流進入核心工作電路成為亟待解決之課題。However, when the electrostatic current is vented from the low-resistance bypass, part of the static current will enter the core working circuit from the input/output terminal. Therefore, it is urgent to prevent the electrostatic current from entering the core working circuit while the electrostatic current is venting. Solve the problem.

有鑑於此,有必要提供一種可靠性較高之靜電放電保護電路。In view of this, it is necessary to provide a highly reliable electrostatic discharge protection circuit.

進一步,提供一種具有前述靜電放電保護電路的積體電路。Further, an integrated circuit having the aforementioned electrostatic discharge protection circuit is provided.

一種靜電放電保護電路,包括:An electrostatic discharge protection circuit comprising:

一靜電放電偵測單元,耦接於一第一導電端與一第二導電端之間,用於偵測該第一導電端是否有靜電放電發生,並且輸出對應的偵測訊號,該第一導電端用於提供一燒錄電壓或者傳輸資料訊號至一核心工作電路;An ESD detecting unit is coupled between a first conductive end and a second conductive end, configured to detect whether the first conductive end has an electrostatic discharge, and output a corresponding detection signal, the first The conductive end is used to provide a programming voltage or transmit a data signal to a core working circuit;

一靜電放電單元,耦合於該第一導電端與該第二導電端之間,用於將第一導電端聚集的靜電電荷宣洩至該第二導電端;及An electrostatic discharge unit coupled between the first conductive end and the second conductive end for venting an electrostatic charge accumulated at the first conductive end to the second conductive end;

一開關單元,耦接於該第一導電端與一工作電路之間,用以依據該偵測訊號選擇性將該第一導電端與該工作電路電性導通或者斷開;該開關單元包括選擇開關、第一控制開關以及第二控制開關,該選擇開關耦接該第一導電端與該工作電路,該第一控制開關與該第二控制開關串聯於該第一導電端與第三導電端之間以控制該選擇開關處於導通或截止狀態;a switching unit is coupled between the first conductive end and a working circuit for electrically connecting or disconnecting the first conductive end to the working circuit according to the detecting signal; the switching unit includes selecting a switch, a first control switch, and a second control switch, the selection switch is coupled to the first conductive end and the working circuit, and the first control switch and the second control switch are connected in series to the first conductive end and the third conductive end Controlling the selection switch to be in an on or off state;

當該第一導電端具有靜電放電電流時,該偵測訊號控制該第一控制開關處於導通狀態,使得該選擇開關處於截止狀態,該第一導電端與該工作電路電性斷開;When the first conductive end has an electrostatic discharge current, the detecting signal controls the first control switch to be in an on state, so that the selection switch is in an off state, and the first conductive end is electrically disconnected from the working circuit;

當該第一導電端提供該燒錄電壓或傳輸資料訊號至該核心工作電路時,該偵測訊號控制該第一控制開關處於截止狀態,該第二控制開關在一開啟電壓控制下處於導通狀態,使得該選擇開關在第三導電端的電壓控制下處於導通狀態,該第一導電端與該工作電路電性導通。When the first conductive end provides the programming voltage or transmits a data signal to the core working circuit, the detecting signal controls the first control switch to be in an off state, and the second control switch is in an on state under an open voltage control The selection switch is in an on state under the voltage control of the third conductive end, and the first conductive end is electrically connected to the working circuit.

一種積體電路,包括:一第一導電端;一第二導電端;一核心工作電路,該核心工作電路用於自該第一導電端提供之一燒錄電壓或者傳輸之資料訊號;及前述的靜電放電保護電路。An integrated circuit includes: a first conductive end; a second conductive end; a core working circuit, wherein the core working circuit is configured to provide a programming voltage or a transmitted data signal from the first conductive end; Electrostatic discharge protection circuit.

相較於先前技術,開關單元藉由第一控制開關與第二控制開關控制耦接於第一導電端與核心工作電路之間的選擇開關之導通或者截止,從而在積體電路正常工作時,使得第一導電端與核心工作電路正常電性導通,在積體電路運輸或者組裝過程中,由於人體接觸而在第一導電端產生靜電放電現象時,除藉由靜電放電單元宣洩靜電電路時,同時使得第一導電端能夠準確、可靠地與核心工作電路電性斷開,防止靜電電路進入核心工作電路。Compared with the prior art, the switch unit controls the on/off of the selection switch coupled between the first conductive end and the core working circuit by the first control switch and the second control switch, so that when the integrated circuit is working normally, The first conductive end is normally electrically connected to the core working circuit, and during the transportation or assembly process of the integrated circuit, when the electrostatic discharge phenomenon occurs at the first conductive end due to human contact, when the electrostatic circuit is vented by the electrostatic discharge unit, At the same time, the first conductive end can be electrically disconnected from the core working circuit accurately and reliably, and the electrostatic circuit is prevented from entering the core working circuit.

100、200、300、400、500...積體電路100, 200, 300, 400, 500. . . Integrated circuit

10、20、30、40、50...靜電放電保護電路10, 20, 30, 40, 50. . . Electrostatic discharge protection circuit

101、201、301、401、501...第一導電端101, 201, 301, 401, 501. . . First conductive end

102、202、302、402、502...第二導電端102, 202, 302, 402, 502. . . Second conductive end

X...核心工作電路X. . . Core working circuit

110、210、310、410、510...靜電放電偵測單元110, 210, 310, 410, 510. . . Electrostatic discharge detection unit

110a、410a...偵測輸入端110a, 410a. . . Detection input

110b、410b...偵測輸出端110b, 410b. . . Detection output

111、411...電阻性元件111, 411. . . Resistive component

112、412...電容性元件112, 412. . . Capacitive component

120、220、320、420、520...靜電放電啟動單元120, 220, 320, 420, 520. . . Electrostatic discharge starting unit

120a、520a...第一輸入端120a, 520a. . . First input

120b、520b...第一輸出端120b, 520b. . . First output

121...第一開關121. . . First switch

122...第二開關122. . . Second switch

130、230、330、430、530...靜電放電單元130, 230, 330, 430, 530. . . Electrostatic discharge unit

130a...啟動端130a. . . Startup

131...放電開關131. . . Discharge switch

140、240、340、440、540...開關單元140, 240, 340, 440, 540. . . Switch unit

140a...第一傳輸端140a. . . First transmission end

140b...第二傳輸端140b. . . Second transmission end

140c...第一控制端140c. . . First control terminal

140d、240d、540d...第二控制端140d, 240d, 540d. . . Second control terminal

141、241、341、441、541...選擇開關141, 241, 341, 441, 541. . . switch

142、242、342、442、542...第一控制開關142, 242, 342, 442, 542. . . First control switch

143、243、343、443、543...第二控制開關143, 243, 343, 443, 543. . . Second control switch

144、244、344、444、544...限流單元144, 244, 344, 444, 544. . . Current limiting unit

A...控制節點A. . . Control node

P1...第一電晶體P1. . . First transistor

N1...第二電晶體N1. . . Second transistor

N2...第三電晶體N2. . . Third transistor

P2...第四電晶體P2. . . Fourth transistor

P3...第五電晶體P3. . . Fifth transistor

N3...第六電晶體N3. . . Sixth transistor

P4...第七電晶體P4. . . Seventh transistor

N4...第八電晶體N4. . . Eighth transistor

P5...第九電晶體P5. . . Ninth transistor

R0...電阻R0. . . resistance

C0...電容C0. . . capacitance

圖1為本發明第一實施例中靜電放電保護電路之電路方框圖。BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a block diagram showing the circuit of an electrostatic discharge protection circuit in a first embodiment of the present invention.

圖2為圖1所示靜電放電保護電路之具體電路結構圖。2 is a detailed circuit configuration diagram of the electrostatic discharge protection circuit shown in FIG. 1.

圖3為本發明第二實施例中靜電放電保護電路之電路結構圖。3 is a circuit configuration diagram of an electrostatic discharge protection circuit in a second embodiment of the present invention.

圖4為本發明第三實施例中靜電放電保護電路之電路結構圖。4 is a circuit configuration diagram of an electrostatic discharge protection circuit in a third embodiment of the present invention.

圖5為本發明第四實施例中靜電放電保護電路之電路結構圖。Fig. 5 is a circuit diagram showing the structure of an electrostatic discharge protection circuit in a fourth embodiment of the present invention.

圖6為本發明第五實施例中靜電放電保護電路之電路結構圖。Fig. 6 is a circuit diagram showing the structure of an electrostatic discharge protection circuit in a fifth embodiment of the present invention.

下面結合附圖具體說明本發明之靜電放電保護電路之具體結構。The specific structure of the electrostatic discharge protection circuit of the present invention will be specifically described below with reference to the accompanying drawings.

請參閱圖1,其為本發明靜電放電保護電路10之電路方框圖。靜電放電保護電路10係應用於積體電路100之任意一輸入/輸出端(I/O端)與核心工作電路X之間之靜電放電保護。本實施例中,定義其中任意一輸入/輸出端為第一導電端101,核心工作電路X為積體電路100中全部之工作電路,例如邏輯電路、訊號處理電路等。Please refer to FIG. 1, which is a circuit block diagram of an electrostatic discharge protection circuit 10 of the present invention. The electrostatic discharge protection circuit 10 is applied to electrostatic discharge protection between any one of the input/output terminals (I/O terminals) of the integrated circuit 100 and the core operating circuit X. In this embodiment, any one of the input/output terminals is defined as a first conductive terminal 101, and the core working circuit X is a working circuit of the integrated circuit 100, such as a logic circuit, a signal processing circuit, and the like.

需要說明的是,積體電路100在生產、運輸、組裝以及使用過程中可能產生靜電放電的情況包括三種:人體模型(Human Body Model, HBM),機器模型(Machine Model, MM)以及充電器件模型(Charged Device Model, CDM),本實施方式主要就人體接觸積體電路100之第一導電端101產生靜電放電之人體模型HBM之保護進行說明。It should be noted that the electrostatic discharge may occur during the production, transportation, assembly, and use of the integrated circuit 100, including three types: Human Body Model (HBM), Machine Model (MM), and charging device model. (Charged Device Model, CDM), the present embodiment mainly describes the protection of the human body model HBM that generates electrostatic discharge at the first conductive end 101 of the human body integrated circuit 100.

積體電路100可以為一次性可編程的非易失性存儲器、多次可編程的非易失性存儲器等積體電路。第一導電端101用於為核心工作電路X提供燒錄電壓Vp以及輸入或者輸出資料訊號(Data)。人體所帶有之靜電電荷主要在第一導電端101產生靜電放電,且靜電放電產生之靜電電流較易自第一導電端101進入核心工作電路X。靜電放電保護電路10之功效為將自第一導電端101之靜電電流快速、準確地宣洩至第二導電端102,本實施例中,第二導電端102為接地端或者電源端,從而防止靜電電流進入核心工作電路X。本實施例所述的核心工作電路X主要為可編程邏輯電路,例如可編程存儲單元、邏輯處理電路等。The integrated circuit 100 may be an integrated circuit such as a one-time programmable nonvolatile memory or a multi-programmable nonvolatile memory. The first conductive end 101 is used to supply the core working circuit X with the programming voltage Vp and the input or output data signal (Data). The electrostatic charge carried by the human body mainly generates an electrostatic discharge at the first conductive end 101, and the electrostatic current generated by the electrostatic discharge is relatively easy to enter the core working circuit X from the first conductive end 101. The electrostatic discharge protection circuit 10 functions to quickly and accurately vent the electrostatic current from the first conductive terminal 101 to the second conductive end 102. In this embodiment, the second conductive end 102 is a ground terminal or a power terminal, thereby preventing static electricity. The current enters the core working circuit X. The core working circuit X described in this embodiment is mainly a programmable logic circuit, such as a programmable memory unit, a logic processing circuit, and the like.

積體電路100包括有多種狀態,本實施例主要對積體電路100之正常工作狀態與靜電放電狀態二種狀態進行說明。其中,積體電路之正常工作狀態包括燒錄狀態與資訊傳輸狀態。所述之燒錄狀態主要係自第一導電端101提供一燒錄電壓Vp,該燒錄電壓Vp啟動核心工作電路X進行資訊之寫入操作。所述之資訊傳輸狀態主要係藉由第一導電端101傳輸資訊,此時,第一導電端101與積體電路之電源電壓Vd相同。The integrated circuit 100 includes a plurality of states. This embodiment mainly describes two states of the normal working state and the electrostatic discharge state of the integrated circuit 100. The normal working state of the integrated circuit includes a burning state and an information transmission state. The programming state is mainly to provide a programming voltage Vp from the first conductive terminal 101, and the programming voltage Vp starts the core working circuit X to perform a writing operation of the information. The information transmission state is mainly transmitted by the first conductive end 101. At this time, the first conductive end 101 is the same as the power supply voltage Vd of the integrated circuit.

當積體電路100處於正常工作狀態時,自第一導電端101加載燒錄電壓Vp或者電源電壓Vd,本實施例中,該燒錄電壓Vp可以為7V,電源電壓為3.3V。When the integrated circuit 100 is in the normal working state, the programming voltage Vp or the power supply voltage Vd is loaded from the first conductive terminal 101. In this embodiment, the programming voltage Vp can be 7V, and the power supply voltage is 3.3V.

當積體電路100處於靜電放電狀態時,亦即積體電路100在運輸、包裝等與人體接觸的狀態中,此時,積體電路100並未不會處於工作狀態,同時亦不會加載電源電壓,由此,第一導電端101並未加載燒錄電壓Vp或者電源電壓Vd,同時,電源供應端VDD亦未提供電源電壓Vd,而此時,第一導電端101之電壓等於其聚集之靜電電荷之靜電電壓Ve。When the integrated circuit 100 is in an electrostatic discharge state, that is, the integrated circuit 100 is in a state of being in contact with the human body in transportation, packaging, etc., at this time, the integrated circuit 100 is not in an active state, and the power is not loaded at the same time. Voltage, whereby the first conductive terminal 101 does not load the programming voltage Vp or the power supply voltage Vd, and at the same time, the power supply terminal VDD does not provide the power supply voltage Vd, and at this time, the voltage of the first conductive terminal 101 is equal to its accumulation. Electrostatic charge electrostatic voltage Ve.

本實施例中,靜電放電保護電路10包括靜電放電偵測單元110、靜電放電啟動單元120、靜電放電單元130以及開關單元140。In this embodiment, the electrostatic discharge protection circuit 10 includes an electrostatic discharge detecting unit 110, an electrostatic discharge starting unit 120, an electrostatic discharge unit 130, and a switching unit 140.

靜電放電偵測單元110耦接於第一導電端101與第二導電端102之間,用於偵測第一導電端101處於正常工作狀態或靜電電荷放電狀態。靜電放電偵測單元110包括偵測輸入端110a與偵測輸出端110b。其中,偵測輸入端110a耦接該第一導電端101,靜電放電偵測單元110依據該偵測輸入端110a所偵測之第一導電端101之電壓狀態,並自偵測輸出端110b輸出一偵測訊號,以表徵第一導電端101是否有靜電放電之情況。The ESD detecting unit 110 is coupled between the first conductive end 101 and the second conductive end 102 for detecting that the first conductive end 101 is in a normal working state or an electrostatic charge discharging state. The ESD detecting unit 110 includes a detecting input terminal 110a and a detecting output terminal 110b. The detecting input terminal 110a is coupled to the first conductive end 101, and the ESD detecting unit 110 outputs the voltage of the first conductive end 101 detected by the detecting input terminal 110a, and outputs the self-detecting output terminal 110b. A detection signal is used to characterize whether the first conductive terminal 101 has an electrostatic discharge.

具體地,例如,當第一導電端101加載燒錄電壓Vp或者電壓Vd時,該靜電放電偵測單元110自偵測輸出端110b輸出一高電位訊號;當第一導電端101聚集靜電電荷並且具有靜電放電現象時,該靜電放電偵測單元110自偵測輸出端110b輸出一低電位訊號。本實施例中,該高電位訊號可以為3.3V-7V,該低電位訊號可以為0V。Specifically, for example, when the first conductive terminal 101 loads the programming voltage Vp or the voltage Vd, the electrostatic discharge detecting unit 110 outputs a high potential signal from the detecting output terminal 110b; when the first conductive terminal 101 collects the electrostatic charge and When the electrostatic discharge phenomenon occurs, the ESD detecting unit 110 outputs a low potential signal from the detecting output terminal 110b. In this embodiment, the high potential signal can be 3.3V-7V, and the low potential signal can be 0V.

靜電放電啟動單元120亦耦接於第一導電端101與第二導電端102之間,同時,靜電放電啟動單元120還耦接靜電放電偵測單元110與靜電放電單元130。The ESD starting unit 120 is also coupled between the first conductive end 101 and the second conductive end 102. The ESD starting unit 120 is also coupled to the ESD detecting unit 110 and the ESD unit 130.

靜電放電啟動單元120包括第一輸入端120a以及第一輸出端120b。具體地,第一輸入端120a耦接該偵測輸出端110b,該第一輸出端120b耦接該靜電放電單元130,該靜電放電啟動單元120依據該偵測訊號自該第一輸出端120b輸出一與該偵測訊號相位相反之啟動訊號至靜電放電單元130,以啟動靜電放電單元130進行靜電電流之宣洩傳輸。The electrostatic discharge activation unit 120 includes a first input terminal 120a and a first output terminal 120b. Specifically, the first input end 120a is coupled to the detection output end 110b, and the first output end 120b is coupled to the ESD unit 130. The ESD activation unit 120 outputs the detection signal according to the detection signal from the first output end 120b. An activation signal opposite to the phase of the detection signal is sent to the electrostatic discharge unit 130 to activate the electrostatic discharge unit 130 for the cathartic transmission of the electrostatic current.

靜電放電單元130耦接於第一導電端101與第二導電端102之間,用於將第一導電端101之靜電放電產生的靜電電流宣洩至第二導電端102。靜電放電單元130可以耦接於靜電放電啟動單元120上,並且藉由啟動訊號之啟動開始洩放靜電電流,亦可以無需藉由啟動訊號之啟動,直接對靜電電流進行洩放。本實施例中,靜電放電單元130包括一啟動端130a,該啟動端耦接該第一輸出端120b,用於接收該啟動訊號,靜電放電單元130在啟動訊號之驅動下開始工作並宣洩靜電電流。The electrostatic discharge unit 130 is coupled between the first conductive end 101 and the second conductive end 102 for venting the electrostatic current generated by the electrostatic discharge of the first conductive end 101 to the second conductive end 102. The electrostatic discharge unit 130 can be coupled to the electrostatic discharge starting unit 120, and can start discharging the electrostatic current by starting the activation signal, and can also directly discharge the electrostatic current without starting the activation signal. In this embodiment, the electrostatic discharge unit 130 includes a start end 130a coupled to the first output end 120b for receiving the start signal, and the electrostatic discharge unit 130 starts to operate under the driving of the start signal and vents the electrostatic current. .

開關單元140耦接在第一導電端101與核心工作電路X之間,同時還耦接該靜電放電偵測單元110之偵測輸出端110b,用於依據該偵測訊號控制第一導電端101與核心工作電路X選擇性地電性導通或電性斷開,以使得核心工作電路X在正常工作狀態時,能夠自第一導電端101正確地電性導通並進行訊號之交互傳輸,同時在第一導電端101聚集有靜電電荷或者有靜電放電現象時,能夠準確地使得核心工作電路X與第一導電端101電性斷開,防止靜電電流進入核心工作電路X對其元件產生破壞。The switch unit 140 is coupled between the first conductive end 101 and the core working circuit X, and is also coupled to the detecting output end 110b of the ESD detecting unit 110 for controlling the first conductive end 101 according to the detecting signal. Selectively electrically or electrically disconnected from the core working circuit X, so that when the core working circuit X is in a normal working state, it can be electrically electrically connected from the first conductive terminal 101 and perform signal transmission, and at the same time When the first conductive end 101 is accumulated with electrostatic charge or has an electrostatic discharge phenomenon, the core working circuit X can be electrically disconnected from the first conductive end 101 to prevent the electrostatic current from entering the core working circuit X and causing damage to its components.

開關單元140包括第一傳輸端140a、第二傳輸端140b、第一控制端140c以及第二控制端140d,第一傳輸端140a耦接該第一導電端101,第二傳輸端140b耦接該核心工作電路X,第一控制端140c耦接該偵測輸出端110b,第二控制端140d耦接電源供應端VDD。開關單元140藉由第一控制端140c接受該偵測訊號,以選擇性地控制第一傳輸端140a與第二傳輸端140b電性導通或電性斷開,同時,還藉由第二控制端140d是否接受到一開啟電壓來控制第一傳輸端140a與第二傳輸端140b之導通。The switch unit 140 includes a first transmission end 140a, a second transmission end 140b, a first control end 140c, and a second control end 140d. The first transmission end 140a is coupled to the first conductive end 101, and the second transmission end 140b is coupled to the first transmission end 140b. The core control circuit X, the first control terminal 140c is coupled to the detection output terminal 110b, and the second control terminal 140d is coupled to the power supply terminal VDD. The switch unit 140 receives the detection signal by the first control terminal 140c to selectively control the first transmission end 140a and the second transmission end 140b to be electrically or electrically disconnected, and also by the second control end. Whether 140d receives an open voltage to control the conduction between the first transmission end 140a and the second transmission end 140b.

該開啟電壓表徵該第一導電端101處於工作狀態或者處於靜電放電狀態,當該第一導電端101處於正常工作狀態,該開啟電壓之電壓等於電源電壓Vd,為高電壓訊號;當該第一導電端101處於靜電放電狀態,該開啟電壓為浮接之低電位訊號,從而對應使得開關單元140在積體電路100正常工作時使得第一導電端101與核心工作電路X可靠地電性導通。The turn-on voltage indicates that the first conductive terminal 101 is in an active state or in an electrostatic discharge state. When the first conductive terminal 101 is in a normal working state, the voltage of the turn-on voltage is equal to the power supply voltage Vd, which is a high voltage signal; when the first The conductive terminal 101 is in an electrostatic discharge state, and the turn-on voltage is a floating low potential signal, so that the switch unit 140 is caused to reliably electrically conduct the first conductive terminal 101 and the core working circuit X when the integrated circuit 100 operates normally.

具體地,請參閱圖2,圖2為圖1所示靜電放電保護電路10之具體電路結構示意圖。Specifically, please refer to FIG. 2. FIG. 2 is a schematic structural diagram of a specific circuit of the ESD protection circuit 10 of FIG.

靜電放電偵測單元110包括電阻性元件111以及電容性元件112。該電阻性元件111耦接於第一導電端101與偵測輸出端110b之間。該電容性元件112耦接於偵測輸出端110b與第二導電端102之間。The electrostatic discharge detecting unit 110 includes a resistive element 111 and a capacitive element 112. The resistive component 111 is coupled between the first conductive end 101 and the detecting output end 110b. The capacitive component 112 is coupled between the detection output terminal 110b and the second conductive terminal 102.

該電阻性元件111與電容性元件112構成RC濾波電路,用於偵測第一導電端101是否有靜電放電現象,並且自偵測輸出端110b輸出對應之偵測訊號。The resistive component 111 and the capacitive component 112 form an RC filter circuit for detecting whether the first conductive terminal 101 has an electrostatic discharge phenomenon, and the corresponding detection signal is output from the detection output terminal 110b.

本實施例中,該電阻性元件111為一電阻R0,該電容性元件112為一電容C0。In this embodiment, the resistive component 111 is a resistor R0, and the capacitive component 112 is a capacitor C0.

靜電放電啟動單元120包括第一開關121與第二開關122。第一開關121耦接於第一導電端101、第一輸入端120a以及第一輸出端120b之間,第二開關122耦接於第一輸入端120a、第一輸出端120b與第二導電端102之間,第一開關121與第二開關122在第一輸入端120a與第一輸出端120b之間構成一反相器結構。The electrostatic discharge starting unit 120 includes a first switch 121 and a second switch 122. The first switch 121 is coupled between the first conductive end 101, the first input end 120a and the first output end 120b, and the second switch 122 is coupled to the first input end 120a, the first output end 120b and the second conductive end. Between 102, the first switch 121 and the second switch 122 form an inverter structure between the first input terminal 120a and the first output terminal 120b.

本實施例中,第一開關121為P型的第一電晶體P1,該第一電晶體P1之閘極耦接該第一輸入端120a,源極與基底端耦接該第一導電端101,汲極耦接該第一輸出端120b。In this embodiment, the first switch 121 is a P-type first transistor P1, the gate of the first transistor P1 is coupled to the first input end 120a, and the source and the base end are coupled to the first conductive end 101. The drain is coupled to the first output terminal 120b.

第二開關122為N型的第二電晶體N1,該第二電晶體N1之閘極耦接該第一輸入端120a,汲極耦接該第一輸出端120b,源極與基底端耦接該第二導電端102。The second switch 122 is an N-type second transistor N1. The gate of the second transistor N1 is coupled to the first input end 120a, the drain is coupled to the first output end 120b, and the source is coupled to the base end. The second conductive end 102.

靜電放電單元130還包括一放電開關131,放電開關131耦接該第一導電端101、第二導電端102以及啟動端130a,用於在啟動訊號控制下處於導通狀態或者截止狀態,當放電開關131處於導通狀態時,第一導電端101與第二導電端102電性導通,從而為第一導電端101之靜電電流提供宣洩路徑;當放電開關131處於截止狀態時,第一導電端101與第二導電端102電性斷開。放電開關131為一N型的第三電晶體N2,該第三電晶體N2之閘極(gate)耦接該啟動端130a,汲極(drain)耦接該第一導電端101,源極(source)與基底端(body/bulk)耦接該第二導電端102。The electrostatic discharge unit 130 further includes a discharge switch 131 coupled to the first conductive end 101, the second conductive end 102, and the start end 130a for being in an on state or an off state under the start signal control, when the discharge switch When the 131 is in the on state, the first conductive end 101 and the second conductive end 102 are electrically connected to provide a venting path for the electrostatic current of the first conductive end 101; when the discharge switch 131 is in the off state, the first conductive end 101 is The second conductive end 102 is electrically disconnected. The discharge switch 131 is an N-type third transistor N2, the gate of the third transistor N2 is coupled to the starting end 130a, and the drain is coupled to the first conductive end 101, the source ( Source) is coupled to the second conductive end 102 with a body/bulk.

開關單元140包括選擇開關141、第一控制開關142、第二控制開關143以及限流單元144。The switch unit 140 includes a selection switch 141, a first control switch 142, a second control switch 143, and a current limiting unit 144.

選擇開關141耦接該第一導電端101與核心工作電路X之間,本實施例中,選擇開關141為一P型的第四電晶體P2,該第四電晶體P2之源極與基底端耦接該第一導電端101,汲極耦接該核心工作電路X,閘極耦接於控制節點A。The selection switch 141 is coupled between the first conductive end 101 and the core working circuit X. In this embodiment, the selection switch 141 is a P-type fourth transistor P2, and the source and the base end of the fourth transistor P2. The first conductive terminal 101 is coupled to the core working circuit X, and the gate is coupled to the control node A.

第一控制開關142耦接該第一導電端101、第一控制端140c以及控制節點A,本實施例中,第一控制開關142為P型的第五電晶體P3,該第五電晶體P3之閘極耦接該第一控制端140c,源極與基底端耦接該第一傳輸端140a,汲極耦接該控制節點A。The first control switch 142 is coupled to the first conductive terminal 101, the first control terminal 140c, and the control node A. In this embodiment, the first control switch 142 is a P-type fifth transistor P3, and the fifth transistor P3 is The gate is coupled to the first control terminal 140c, the source and the base end are coupled to the first transmission end 140a, and the drain is coupled to the control node A.

限流單元144耦接於該控制節點A與第二控制開關143之間,用於限定流過第二控制開關143之電流,以更為準確地控制節點A之電壓。The current limiting unit 144 is coupled between the control node A and the second control switch 143 for limiting the current flowing through the second control switch 143 to more accurately control the voltage of the node A.

本實施例中,限流單元144為一限流電阻,較佳地,該限流單元144之電阻值為10KΩ。In this embodiment, the current limiting unit 144 is a current limiting resistor. Preferably, the current limiting unit 144 has a resistance value of 10 KΩ.

第二控制開關143耦接於該限流單元144、第二導電端102、第二控制端140d以及第三導電端103之間,用於在第二控制端140d之控制下使得控制節點A與第二導電端102電性導通或電性斷開,以使得控制節點A的電壓在積體電路100正常工作狀態時等於第三導電端103之電壓,進而控制選擇開關141處於導通狀態。本實施例中,第三導電端103為接地端,第三導電端103之電壓為0V。The second control switch 143 is coupled between the current limiting unit 144, the second conductive end 102, the second control end 140d, and the third conductive end 103 for controlling the control node A under the control of the second control terminal 140d. The second conductive terminal 102 is electrically or electrically disconnected, so that the voltage of the control node A is equal to the voltage of the third conductive terminal 103 when the integrated circuit 100 is in the normal working state, thereby controlling the selection switch 141 to be in an on state. In this embodiment, the third conductive end 103 is a ground end, and the voltage of the third conductive end 103 is 0V.

具體地,第二控制開關143為一N型的第六電晶體N3,該第六電晶體N3之閘極耦接該第二控制端140d,汲極耦接該限流單元144,源極與基底端分別耦接第二導電端102。Specifically, the second control switch 143 is an N-type sixth transistor N3, the gate of the sixth transistor N3 is coupled to the second control terminal 140d, the drain is coupled to the current limiting unit 144, and the source is The base ends are respectively coupled to the second conductive ends 102.

下面結合圖2,具體說明靜電放電保護電路10之工作過程與原理。The working process and principle of the electrostatic discharge protection circuit 10 will be specifically described below with reference to FIG.

當積體電路100處於正常工作狀態時,第一導電端101提供一燒錄電壓VP或者電源電壓Vd,靜電放電偵測單元110之偵測輸入端110a加載該燒錄電壓,電阻性元件111與電容性元件112構成之RC濾波電路在偵測輸出端110b輸出一高電位之偵測訊號。When the integrated circuit 100 is in a normal working state, the first conductive terminal 101 provides a programming voltage VP or a power supply voltage Vd, and the detecting input terminal 110a of the electrostatic discharge detecting unit 110 loads the programming voltage, and the resistive element 111 and The RC filter circuit formed by the capacitive component 112 outputs a high potential detection signal at the detection output terminal 110b.

靜電放電啟動單元120之第一輸入端120a則自該偵測輸出端110b接收該高電位之偵測訊號。第一開關121在高電位之偵測訊號控制下處於截止狀態,第二開關122則在高電位之偵測訊號控制下處於導通狀態,從而自第一輸出端120b輸出一低電位之啟動訊號。The first input terminal 120a of the electrostatic discharge starting unit 120 receives the high-potential detection signal from the detection output terminal 110b. The first switch 121 is in an off state under the control of the high potential detection signal, and the second switch 122 is in an on state under the control of the high potential detection signal, thereby outputting a low potential activation signal from the first output terminal 120b.

靜電放電單元130在低電位之驅動訊號控制下處於截止狀態。The electrostatic discharge unit 130 is in an off state under the control of the driving signal of a low potential.

開關單元140之第一控制端140c自偵測輸出端110b接收該高電位之偵測訊號,由此,第一控制開關142處於截止狀態。The first control terminal 140c of the switch unit 140 receives the high-potential detection signal from the detection output terminal 110b, whereby the first control switch 142 is in an off state.

第二控制端140d自電源供應端VDD接收電源電壓Vd作為開啟電壓,第二控制開關143處於導通狀態,由此,控制節點A與第三導電端103電性導通,且等於第二導電端102之低電位電壓,由此,選擇開關141處於導通狀態,從而使得第一導電端101與核心工作電路X電性導通,則第一導電端101提供一燒錄電壓VP傳輸至核心工作電路X,從而啟動核心工作電路X,使得核心工作電路X開始工作。The second control terminal 140d receives the power supply voltage Vd from the power supply terminal VDD as the turn-on voltage, and the second control switch 143 is in an on state, whereby the control node A and the third conductive terminal 103 are electrically turned on, and is equal to the second conductive terminal 102. a low potential voltage, whereby the selection switch 141 is in an on state, so that the first conductive end 101 is electrically connected to the core working circuit X, and the first conductive end 101 provides a programming voltage VP to be transmitted to the core working circuit X, Thereby, the core working circuit X is activated, so that the core working circuit X starts to work.

當積體電路100聚集有靜電荷或處於靜電放電狀態時,第一導電端101之電壓等於聚集之靜電電荷之靜電電壓Ve,電源供應端VDD並未提供電源電壓Vd,呈浮接狀態(floating)。When the integrated circuit 100 is in an electrostatic charge or in an electrostatic discharge state, the voltage of the first conductive terminal 101 is equal to the electrostatic voltage Ve of the accumulated electrostatic charge, and the power supply terminal VDD does not supply the power supply voltage Vd, and is in a floating state (floating) ).

此時,若靜電電壓Ve為正脈衝時,由於RC濾波電路之延遲特性,電阻性元件111與電容性元件112具有延遲時間τ,由此,自偵測輸入端110a加載靜電電壓Ve到偵測輸出端110b輸出該靜電電壓Ve亦具有延遲時間τ,由此,在該延遲時間τ內,偵測輸出端110b輸出一低電位之偵測訊號,低電位之偵測訊號加載至第一輸入端120a,則第一輸出端120b輸出一高電位之啟動訊號至靜電放電單元130之啟動端130a。At this time, when the electrostatic voltage Ve is a positive pulse, the resistive element 111 and the capacitive element 112 have a delay time τ due to the delay characteristic of the RC filter circuit, whereby the electrostatic voltage Ve is applied from the detection input terminal 110a to the detection. The output voltage of the output terminal 110b also has a delay time τ. Therefore, during the delay time τ, the detection output terminal 110b outputs a low potential detection signal, and the low potential detection signal is loaded to the first input end. 120a, the first output terminal 120b outputs a high-potential start signal to the start end 130a of the electrostatic discharge unit 130.

靜電放電單元130之放電開關131在該高電位之啟動訊號控制下處於導通狀態,從而使得第一導電端101與第二導電端102電性導通,為第一導電端101之靜電放電電流提供一快速宣洩路徑。可以理解,在延遲時間τ內,第一導電端101之靜電放電電流已宣洩完成,另外,延遲時間τ係可依據實際電路進行調整設計。The discharge switch 131 of the electrostatic discharge unit 130 is in an on state under the control of the high-potential activation signal, so that the first conductive end 101 and the second conductive end 102 are electrically connected to provide a static discharge current for the first conductive end 101. Quick catharsis path. It can be understood that, within the delay time τ, the electrostatic discharge current of the first conductive terminal 101 has been vented, and the delay time τ can be adjusted according to the actual circuit.

同時,低電位之偵測訊號加載至開關單元140之第一控制端140c,第一控制開關142在低電位偵測訊號控制下處於導通狀態,由此,控制節點A處於高電位,對應地,選擇開關141則在控制節點A之高電位控制下處於截止狀態,使得第一導電端101與核心工作電路X處於電性斷開狀態,防止靜電電荷形成的靜電流進入核心工作電路。At the same time, the low-potential detection signal is applied to the first control terminal 140c of the switch unit 140, and the first control switch 142 is in an on state under the control of the low-potential detection signal, whereby the control node A is at a high potential, correspondingly, The selection switch 141 is in an off state under the high potential control of the control node A, so that the first conductive terminal 101 and the core working circuit X are electrically disconnected, and the electrostatic current formed by the electrostatic charge is prevented from entering the core working circuit.

若靜電電壓Ve為負脈衝時,放電開關131之寄生二極體(圖未示)導通,亦可為靜電電流在第一導電端101與第二導電端102之間提供宣洩導電路徑。If the electrostatic voltage Ve is a negative pulse, the parasitic diode (not shown) of the discharge switch 131 is turned on, and the electrostatic current may provide a venting conductive path between the first conductive end 101 and the second conductive end 102.

相較於先前技術,開關單元140藉由第一控制開關142與第二控制開關143來控制耦接於第一導電端101與核心工作電路X之間的選擇開關141之導通或者截止,從而在積體電路100正常工作時,使得第一導電端101與核心工作電路X正常電性導通,在積體電路100運輸或者組裝過程中,由於人體接觸而在第一導電端101產生靜電放電現象時,除藉由靜電放電單元130宣洩靜電電路時,同時使得第一導電端101能夠準確、可靠地與核心工作電路X電性斷開,防止靜電電路進入核心工作電路X。Compared with the prior art, the switch unit 140 controls the conduction or the off of the selection switch 141 coupled between the first conductive terminal 101 and the core working circuit X by the first control switch 142 and the second control switch 143, thereby When the integrated circuit 100 is in normal operation, the first conductive end 101 is normally electrically connected to the core working circuit X, and during the transportation or assembly process of the integrated circuit 100, when the first conductive end 101 is electrostatically discharged due to human contact. When the electrostatic circuit is vented by the electrostatic discharge unit 130, the first conductive end 101 can be electrically and reliably disconnected from the core working circuit X, and the electrostatic circuit is prevented from entering the core working circuit X.

請參閱圖3,其為本發明第二實施例之靜電放電保護電路20之電路結構示意圖。Please refer to FIG. 3 , which is a schematic diagram of the circuit structure of the electrostatic discharge protection circuit 20 according to the second embodiment of the present invention.

本實施例之靜電放電保護電路20與第一實施例之靜電放電保護電路10之結構基本相同,區別僅在於開關單元240僅包括選擇開關241、第一控制開關242以及第二控制開關243,並不包括靜電放電保護電路10之限流單元144,第二控制開關243直接耦接於控制節點A、第三導電端203以及第二控制端240d之間,從而省略了限流單元144之佔據空間,提高靜電放電保護電路20之佈局空間。The electrostatic discharge protection circuit 20 of the present embodiment has substantially the same structure as the electrostatic discharge protection circuit 10 of the first embodiment, except that the switch unit 240 includes only the selection switch 241, the first control switch 242, and the second control switch 243, and The current limiting unit 144 of the ESD protection circuit 10 is not included. The second control switch 243 is directly coupled between the control node A, the third conductive terminal 203, and the second control terminal 240d, thereby omitting the space occupied by the current limiting unit 144. The layout space of the electrostatic discharge protection circuit 20 is increased.

請參閱圖4,其為本發明第三實施例之靜電放電保護電路30之電路結構示意圖。Please refer to FIG. 4 , which is a schematic diagram of the circuit structure of the electrostatic discharge protection circuit 30 according to the third embodiment of the present invention.

本實施例之靜電放電保護電路30與第一實施例之靜電放電保護電路10之結構基本相同,區別僅在於該靜電放電保護電路30並不包括靜電放電啟動單元120,且該靜電放電單元330直接耦接於該第一導電端301與第二導電端302之間,其無需偵測訊號之啟動,而是當第一導電端301聚集有靜電電荷或者具有靜電放電現象時,寄生雙載子電晶體(未標示)會自動處於導通狀態從而為靜電電流提供導通迴路,將靜電電流宣洩至第二導電端302。The electrostatic discharge protection circuit 30 of the present embodiment has substantially the same structure as the electrostatic discharge protection circuit 10 of the first embodiment, except that the electrostatic discharge protection circuit 30 does not include the electrostatic discharge activation unit 120, and the electrostatic discharge unit 330 is directly It is coupled between the first conductive end 301 and the second conductive end 302, and does not need to detect the activation of the signal, but when the first conductive end 301 is accumulated with electrostatic charge or has an electrostatic discharge phenomenon, the parasitic bi-carrier power The crystal (not labeled) will automatically be in a conducting state to provide a conduction loop for the electrostatic current, venting the electrostatic current to the second conductive terminal 302.

具體地,該靜電放電單元330為一閘極接地之N型電晶體,該N型電晶體之汲極耦接該第一導電端301,閘極、源極以及基底端耦接第二導電端102,構成以GG-NMOS結構之靜電放電保護。Specifically, the electrostatic discharge unit 330 is a gate-grounded N-type transistor, the drain of the N-type transistor is coupled to the first conductive end 301, and the gate, the source, and the base end are coupled to the second conductive end. 102, which constitutes electrostatic discharge protection with a GG-NMOS structure.

請參閱圖5,其為本發明第四實施例之靜電放電保護電路40之電路結構示意圖。Please refer to FIG. 5 , which is a schematic structural diagram of a circuit of an electrostatic discharge protection circuit 40 according to a fourth embodiment of the present invention.

本實施例之靜電放電保護電路40與第一實施例之靜電放電保護電路10之結構基本相同,區別僅在於靜電放電偵測單元410中,該電阻性元件411為一P型的第七電晶體P4,該第七電晶體P4之閘極耦接接地端,源極與基底端耦接該偵測輸入端410a,汲極耦接該偵測輸出端410b。The electrostatic discharge protection circuit 40 of the present embodiment has substantially the same structure as the electrostatic discharge protection circuit 10 of the first embodiment. The difference is only in the electrostatic discharge detecting unit 410. The resistive element 411 is a P-type seventh transistor. P4, the gate of the seventh transistor P4 is coupled to the ground end, the source and the base end are coupled to the detection input end 410a, and the drain is coupled to the detection output end 410b.

該電容性元件412為N型的第八電晶體N4,該第八電晶體N4之閘極耦接該偵測輸出端410b,作為該電容性元件的其中一電極端,基底端、源極與汲極耦接於該第二導電端402作為該電容性元件的另外一電極端。The capacitive element 412 is an N-type eighth transistor N4, and the gate of the eighth transistor N4 is coupled to the detection output end 410b as one of the electrode ends of the capacitive element, the base end, the source and the The drain is coupled to the second conductive end 402 as another electrode end of the capacitive element.

藉由第七電晶體P4與第八電晶體N4構成RC濾波電路能夠減小元件之佔用空間,提高靜電放電保護電路40以及積體電路400之元件設計空間。By forming the RC filter circuit by the seventh transistor P4 and the eighth transistor N4, the space occupied by the components can be reduced, and the component design space of the electrostatic discharge protection circuit 40 and the integrated circuit 400 can be improved.

請參閱圖6,其為本發明第五實施例之靜電放電保護電路50之電路結構示意圖。Please refer to FIG. 6, which is a circuit diagram of an electrostatic discharge protection circuit 50 according to a fifth embodiment of the present invention.

本實施例之靜電放電保護電路50與第四實施例之靜電放電保護電路40之結構基本相同,區別僅在於該開關單元540還包括第三控制開關545,該第三控制開關545耦接該第二控制端540d、第一輸入端520a與第一輸出端520b之間,用於為第二控制端540d提供一開啟電壓,以控制該第三控制開關545處於導通狀態。The electrostatic discharge protection circuit 50 of the present embodiment has substantially the same structure as the electrostatic discharge protection circuit 40 of the fourth embodiment. The only difference is that the switch unit 540 further includes a third control switch 545, and the third control switch 545 is coupled to the first The second control terminal 540d, the first input terminal 520a and the first output terminal 520b are configured to provide an opening voltage for the second control terminal 540d to control the third control switch 545 to be in an on state.

具體地,第三控制開關545為一P型的第九電晶體P5,該第九電晶體P5之汲極耦接該第二控制端540d,閘極耦接該第一輸出端520b,源極與基底端同時耦接該第一輸入端520a。Specifically, the third control switch 545 is a P-type ninth transistor P5, the NMOS of the ninth transistor P5 is coupled to the second control terminal 540d, and the gate is coupled to the first output terminal 520b, the source The first input end 520a is coupled to the base end at the same time.

由此,當積體電路處於正常工作狀態或者待機狀態時,第一輸入端520a提供一3.3V之工作電壓或7V之燒錄電壓至該第三控制開關545之源極,第一輸出端520b提供一0V之反相電壓至第三控制開關545之閘極,由此,第三控制開關545處於導通狀態,同時,提供一至少為3.3V的電壓至該第二控制端540d,從而使得第二控制開關543以及選擇開關541處於導通狀態,第一導電端501提供一燒錄電壓(7V)或者電源電壓(3.3V)至核心工作電路X。Therefore, when the integrated circuit is in a normal working state or a standby state, the first input terminal 520a provides a working voltage of 3.3V or a programming voltage of 7V to the source of the third control switch 545, and the first output terminal 520b Providing a reverse voltage of 0V to the gate of the third control switch 545, whereby the third control switch 545 is in an on state, and at the same time, providing a voltage of at least 3.3V to the second control terminal 540d, thereby making The second control switch 543 and the selection switch 541 are in an on state, and the first conductive terminal 501 provides a programming voltage (7V) or a power supply voltage (3.3V) to the core operating circuit X.

綜上所述,本發明符合發明專利要件,爰依法提出專利申請。惟,以上所述者僅為本發明之較佳實施方式,本發明之範圍並不以上述實施方式為限,舉凡熟悉本案技藝之人士援依本發明之精神所作之等效修飾或變化,皆應涵蓋於以下申請專利範圍內。In summary, the present invention complies with the requirements of the invention patent and submits a patent application according to law. However, the above description is only the preferred embodiment of the present invention, and the scope of the present invention is not limited to the above-described embodiments, and equivalent modifications or variations made by those skilled in the art in light of the spirit of the present invention are It should be covered by the following patent application.

no

100‧‧‧積體電路 100‧‧‧ integrated circuit

10‧‧‧靜電放電保護電路 10‧‧‧Electrostatic discharge protection circuit

101‧‧‧第一導電端 101‧‧‧First conductive end

102‧‧‧第二導電端 102‧‧‧Second conductive end

103‧‧‧第三導電端 103‧‧‧ third conductive end

X‧‧‧核心工作電路 X‧‧‧ core working circuit

110‧‧‧靜電放電偵測單元 110‧‧‧Electrostatic Discharge Detection Unit

110a‧‧‧偵測輸入端 110a‧‧‧Detection input

110b‧‧‧偵測輸出端 110b‧‧‧Detection output

111‧‧‧電阻性元件 111‧‧‧Resistive components

112‧‧‧電容性元件 112‧‧‧Capacitive components

120‧‧‧靜電放電啟動單元 120‧‧‧Electrostatic discharge starter unit

120a‧‧‧第一輸入端 120a‧‧‧ first input

120b‧‧‧第一輸出端 120b‧‧‧first output

130‧‧‧靜電放電單元 130‧‧‧Electrostatic discharge unit

130a‧‧‧啟動端 130a‧‧‧Startup

131‧‧‧放電開關 131‧‧‧Discharge switch

140‧‧‧開關單元 140‧‧‧Switch unit

140a‧‧‧第一傳輸端 140a‧‧‧first transmission end

140b‧‧‧第二傳輸端 140b‧‧‧second transmission end

140c‧‧‧第一控制端 140c‧‧‧first control end

140d‧‧‧第二控制端 140d‧‧‧second control terminal

141‧‧‧選擇開關 141‧‧‧Selection switch

142‧‧‧第一控制開關 142‧‧‧First control switch

143‧‧‧第二控制開關 143‧‧‧Second control switch

144‧‧‧限流單元 144‧‧‧ Current limiting unit

A‧‧‧控制節點 A‧‧‧ control node

P1‧‧‧第一電晶體 P1‧‧‧First transistor

N1‧‧‧第二電晶體 N1‧‧‧second transistor

N2‧‧‧第三電晶體 N2‧‧‧ third transistor

P2‧‧‧第四電晶體 P2‧‧‧ fourth transistor

P3‧‧‧第五電晶體 P3‧‧‧ fifth transistor

N3‧‧‧第六電晶體 N3‧‧‧ sixth transistor

P4‧‧‧第七電晶體 P4‧‧‧ seventh transistor

N4‧‧‧第八電晶體 N4‧‧‧ eighth transistor

P5‧‧‧第九電晶體 P5‧‧‧ ninth transistor

R0‧‧‧電阻 R0‧‧‧ resistance

C0‧‧‧電容 C0‧‧‧ capacitor

Claims (18)

一種靜電放電保護電路,包括:
一靜電放電偵測單元,耦接於一第一導電端與一第二導電端之間,用於偵測該第一導電端是否有靜電放電發生,並且輸出對應的偵測訊號,該第一導電端用於提供一燒錄電壓或者傳輸資料訊號至一核心工作電路;
一靜電放電單元,耦合於該第一導電端與該第二導電端之間,用於將第一導電端聚集的靜電電荷宣洩至該第二導電端;及
一開關單元,耦接於該第一導電端與該核心工作電路之間,用以依據該偵測訊號選擇性將該第一導電端與該核心工作電路電性導通或者斷開;該開關單元包括選擇開關、第一控制開關以及第二控制開關,該選擇開關耦接該第一導電端與該核心工作電路,該第一控制開關與該第二控制開關串聯於該第一導電端與第三導電端之間以控制該選擇開關處於導通或截止狀態;
當該第一導電端具有靜電放電電流時,該偵測訊號控制該第一控制開關處於導通狀態,使得該選擇開關處於截止狀態,該第一導電端與該核心工作電路電性斷開;
當該第一導電端提供該燒錄電壓或傳輸資料訊號至該核心工作電路時,該偵測訊號控制該第一控制開關處於截止狀態,該第二控制開關在一開啟電壓控制下處於導通狀態,使得該選擇開關在第三導電端的電壓控制下處於導通狀態,該第一導電端與該核心工作電路電性導通。
An electrostatic discharge protection circuit comprising:
An ESD detecting unit is coupled between a first conductive end and a second conductive end, configured to detect whether the first conductive end has an electrostatic discharge, and output a corresponding detection signal, the first The conductive end is used to provide a programming voltage or transmit a data signal to a core working circuit;
An electrostatic discharge unit coupled between the first conductive end and the second conductive end for venting an electrostatic charge accumulated at the first conductive end to the second conductive end; and a switching unit coupled to the first Between a conductive end and the core working circuit, the first conductive end is electrically connected or disconnected from the core working circuit according to the detecting signal; the switching unit includes a selection switch, a first control switch, and a second control switch, the selection switch is coupled to the first conductive end and the core working circuit, the first control switch and the second control switch are connected in series between the first conductive end and the third conductive end to control the selection The switch is in an on or off state;
When the first conductive end has an electrostatic discharge current, the detecting signal controls the first control switch to be in an on state, so that the selection switch is in an off state, and the first conductive end is electrically disconnected from the core working circuit;
When the first conductive end provides the programming voltage or transmits a data signal to the core working circuit, the detecting signal controls the first control switch to be in an off state, and the second control switch is in an on state under an open voltage control The selection switch is in an on state under the voltage control of the third conductive end, and the first conductive end is electrically connected to the core working circuit.
如請求項1所述的靜電放電保護電路,其中,該開關單元包括第一傳輸端、第二傳輸端、第一控制端與第二控制端以及一控制節點,該第一傳輸端耦接該第一導電端,該第二傳輸端耦接該核心工作電路,該第一控制端接該偵測訊號,該第二控制端接收該開啟電壓,該選擇開關耦接該第一傳輸端、第二傳輸端以及該控制節點,該第一控制開關耦接該第一傳輸端、第一控制端與該控制節點,該第二控制開關耦接該控制節點、第二控制端與該第三導電端。The ESD protection circuit of claim 1, wherein the switch unit comprises a first transmission end, a second transmission end, a first control end and a second control end, and a control node, wherein the first transmission end is coupled to the a first conductive end, the second transmitting end is coupled to the core working circuit, the first control end is connected to the detecting signal, the second control end receives the turning-on voltage, and the selecting switch is coupled to the first transmitting end, The second control switch is coupled to the first transmission end, the first control end, and the control node, and the second control switch is coupled to the control node, the second control end, and the third conductive end. 如請求項2所述的靜電放電保護電路,其中,該選擇開關與該第二開關為P型電晶體,該P型電晶體之源極電性連接該第一傳輸端,汲極電性連接該第二傳輸端,閘極耦接該控制節點,該第一控制開關之源極電性連接該第一傳輸端,汲極耦接該控制節點,閘極耦接該第一控制端,該第三開關為N型電晶體,該第三開關之源極電性連接該控制節點,汲極電性連接第三導電端,閘極耦接該第二控制端。The ESD protection circuit of claim 2, wherein the selection switch and the second switch are P-type transistors, and the source of the P-type transistor is electrically connected to the first transmission end, and the gate is electrically connected. The second transmission end is coupled to the control node, the source of the first control switch is electrically connected to the first transmission end, the drain is coupled to the control node, and the gate is coupled to the first control end, The third switch is an N-type transistor, the source of the third switch is electrically connected to the control node, the drain is electrically connected to the third conductive end, and the gate is coupled to the second control end. 如請求項2所述的靜電放電保護電路,其中,該控制節點與該第二控制開關之間還包括限流單元,用於限定流過第二控制開關之電流。The electrostatic discharge protection circuit of claim 2, wherein the control node and the second control switch further comprise a current limiting unit for limiting a current flowing through the second control switch. 如請求項4所述的靜電放電保護電路,其中,該限流單元為一電阻,該電阻之電阻值為10KΩ。The electrostatic discharge protection circuit of claim 4, wherein the current limiting unit is a resistor having a resistance value of 10 kΩ. 如請求項3或者4所述的靜電放電保護電路,其中,該靜電放電偵測單元包括偵測輸入端與偵測輸出端,該偵測輸入端耦接該第一導電端,該偵測輸出端用於輸出該偵測訊號,該靜電放電單元包括電阻性元件與電容性元件,該電阻性元件耦接於該偵測輸入端與該偵測輸出端之間,該電容性元件耦接於該偵測輸出端與該第二導電端之間,該電阻性元件與該電容性元件構成RC濾波電路。The ESD protection circuit of claim 3 or 4, wherein the ESD detection unit includes a detection input end and a detection output end, the detection input end is coupled to the first conductive end, and the detection output is The end is configured to output the detection signal, the electrostatic discharge unit includes a resistive component and a capacitive component, the resistive component is coupled between the detection input end and the detection output end, and the capacitive component is coupled to Between the detection output end and the second conductive end, the resistive element and the capacitive element form an RC filter circuit. 如請求項6所述的靜電放電保護電路,其中,該電阻性元件為一電阻,該電阻性元件為一電容。The electrostatic discharge protection circuit of claim 6, wherein the resistive component is a resistor, and the resistive component is a capacitor. 如請求項7所述的靜電放電保護電路,其中,該靜電放電單元為一閘極接地之N型電晶體,該N型電晶體之閘極、源極以及基底端耦接第二導電端,汲極耦接該第一導電端,構成GG-NMOS結構。The electrostatic discharge protection circuit of claim 7, wherein the electrostatic discharge unit is a gate-grounded N-type transistor, and the gate, the source and the base end of the N-type transistor are coupled to the second conductive end, The drain is coupled to the first conductive end to form a GG-NMOS structure. 如請求項8所述的靜電放電保護電路,其中,該開啟電壓為該核心工作電路的電源電壓。The electrostatic discharge protection circuit of claim 8, wherein the turn-on voltage is a power supply voltage of the core operating circuit. 如請求項6所述的靜電放電保護電路,其中,該電阻性元件為一P型電晶體,該P型電晶體之閘極耦接接地端,源極與基底端耦接該偵測輸入端,汲極耦接該偵測輸出端,該電容性元件為一N型電晶體,該N型電晶體之閘極耦接該偵測輸出端作為該電容性元件的其中一電極端,基底端、源極與汲極耦接於該第二導電端作為該電容性元件的另外一電極端。The electrostatic discharge protection circuit of claim 6, wherein the resistive component is a P-type transistor, the gate of the P-type transistor is coupled to the ground, and the source and the substrate are coupled to the detection input. The drain electrode is coupled to the detection output end, the capacitive component is an N-type transistor, and the gate of the N-type transistor is coupled to the detection output end as one of the electrode ends of the capacitive component, the base end The source and the drain are coupled to the second conductive end as the other electrode end of the capacitive element. 如請求項10所述的靜電放電保護電路,其中,該靜電放電保護電路還包括靜電放電啟動單元,該靜電放電啟動單元耦接於該第一導電端與該第二導電端之間,該靜電放電啟動單元包括第一輸入端與第一輸出端,該第一輸入端耦接於該偵測輸出端,用於接收該偵測訊號,該第一輸出端耦接該靜電放電單元,該靜電放電啟動單元用於依據該偵測訊號輸出一與該偵測訊號相位相反之啟動訊號。The electrostatic discharge protection circuit of claim 10, wherein the electrostatic discharge protection circuit further includes an electrostatic discharge activation unit coupled between the first conductive end and the second conductive end, the static electricity The discharge starting unit includes a first input end coupled to the first output end, the first input end is coupled to the detection output end for receiving the detection signal, and the first output end is coupled to the electrostatic discharge unit, the static electricity The discharge starting unit is configured to output an activation signal opposite to the phase of the detection signal according to the detection signal. 如請求項11所述的靜電放電保護電路,其中,該靜電放電啟動單元包括一第一開關與一第二開關,該第一開關耦接於該第一導電端、該第一輸入端與該第一輸出端之間,該第二開關耦接於該第一輸入端、該第一輸出端與該第二導電端之間,該第一開關與該第二開關在第一輸入端與第一輸出端之間構成一反相器結構。The ESD protection circuit of claim 11, wherein the ESD activation unit includes a first switch and a second switch, the first switch is coupled to the first conductive end, the first input end, and the The first switch is coupled between the first input end, the first output end and the second conductive end, the first switch and the second switch are at the first input end and the second switch An inverter structure is formed between the outputs. 如請求項10所述的靜電放電保護電路,其中,該靜電放電單元為一N型電晶體,該N型電晶體之閘極耦接該第一輸出端,汲極耦接該第一導電端,源極與基底端耦接該第二導電端。The electrostatic discharge protection circuit of claim 10, wherein the electrostatic discharge unit is an N-type transistor, the gate of the N-type transistor is coupled to the first output end, and the drain is coupled to the first conductive end The source and the base end are coupled to the second conductive end. 如請求項10所述的靜電放電保護電路,其中,該開啟電壓表徵該第一導電端處於工作狀態或者處於靜電放電狀態,當該第一導電端處於工作狀態,該啟動訊號為高電壓狀態,且使得控制節點之電壓控制該選擇開關處於導通狀態;當該第一導電端處於靜電放電狀態,該啟動訊號一低電位訊號,且使得該控制節點之電壓控制該選擇開關處於截止狀態,防止靜電電流進入該核心工作電路。The ESD protection circuit of claim 10, wherein the turn-on voltage indicates that the first conductive end is in an active state or in an electrostatic discharge state, and when the first conductive end is in an active state, the start signal is in a high voltage state, And causing the voltage of the control node to control the selection switch to be in an on state; when the first conductive end is in an electrostatic discharge state, the startup signal is a low potential signal, and the voltage of the control node controls the selection switch to be in an off state, preventing static electricity Current enters the core operating circuit. 如請求項14所述的靜電放電保護電路,其中,該啟動訊號為該核心工作電路的電源電壓。The ESD protection circuit of claim 14, wherein the activation signal is a power supply voltage of the core operating circuit. 如請求項15所述的靜電放電保護電路,其中,該開關單元還包括第三控制開關,該第三控制開關為一P型電晶體,該P型電晶體之閘極電性連接該第一輸出端,該P型電晶體之源極與基底端耦接該偵測輸出端與第一輸入端,該P型電晶體之汲極耦接於該第三開關之閘極。The ESD protection circuit of claim 15, wherein the switch unit further includes a third control switch, the third control switch is a P-type transistor, and the gate of the P-type transistor is electrically connected to the first The output end of the P-type transistor is coupled to the detection terminal and the first input end, and the drain of the P-type transistor is coupled to the gate of the third switch. 如請求項1所述的靜電放電保護電路,其中,該第二導電端與該第三導電端均為接地端。The electrostatic discharge protection circuit of claim 1, wherein the second conductive end and the third conductive end are both grounded. 一種積體電路,包括:
一第一導電端;
一第二導電端;
一核心工作電路,該核心工作電路用於自該第一導電端提供之一燒錄電壓或者傳輸之資料訊號;及
如請求項1-5項任意一項的靜電放電保護電路。
An integrated circuit comprising:
a first conductive end;
a second conductive end;
A core working circuit for providing a programming voltage or a transmitted data signal from the first conductive terminal; and an electrostatic discharge protection circuit according to any one of claims 1-5.
TW104125706A 2015-08-06 2015-08-06 Electrostatic discharge protection circuit and integrated circuit TWI559492B (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI662682B (en) * 2018-05-07 2019-06-11 世界先進積體電路股份有限公司 Integrated circuits and electrostatic discharge protection circuits
CN110504251A (en) * 2018-05-18 2019-11-26 世界先进积体电路股份有限公司 Integrated circuit and ESD protection circuit
US11088541B2 (en) 2018-09-07 2021-08-10 Vanguard International Semiconductor Corporation Integrated circuit and electrostatic discharge protection circuit thereof

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Publication number Priority date Publication date Assignee Title
TW473978B (en) * 2000-11-20 2002-01-21 Winbond Electronics Corp Low-voltage triggered electrostatic discharge protection circuit
US6724601B2 (en) * 2001-03-16 2004-04-20 Integrated Device Technology, Inc. ESD protection circuit
US20050237682A1 (en) * 2004-04-26 2005-10-27 Taiwan Semiconductor Manufacturing Co. Novel ESD protection scheme for core devices
US7663851B2 (en) * 2005-05-25 2010-02-16 Taiwan Semiconductor Manufacturing Co., Ltd. Tie-off circuit with ESD protection features

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI662682B (en) * 2018-05-07 2019-06-11 世界先進積體電路股份有限公司 Integrated circuits and electrostatic discharge protection circuits
CN110504251A (en) * 2018-05-18 2019-11-26 世界先进积体电路股份有限公司 Integrated circuit and ESD protection circuit
CN110504251B (en) * 2018-05-18 2021-12-24 世界先进积体电路股份有限公司 Integrated circuit and electrostatic discharge protection circuit
US11088541B2 (en) 2018-09-07 2021-08-10 Vanguard International Semiconductor Corporation Integrated circuit and electrostatic discharge protection circuit thereof

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