TW201642498A - Light emitting diode structure - Google Patents

Abstract

A light emitting diode structure includes a substrate, a semiconductor epitaxial layer, a current conductive layer, a first electrode and a second electrode. The semiconductor epitaxial layer is disposed on the substrate and has at least one protruding portion and at least one recessed portion. The current conductive layer is disposed on the semiconductor epitaxial layer, extends into the recessed portion and electrically connected to the semiconductor epitaxial layer. The first electrode is disposed on the current conductive layer and electrically connected to the semiconductor epitaxial layer. The second electrode is disposed on the current conductive layer and electrically connected to the semiconductor epitaxial layer. An orthographic projection area of the first electrode to the substrate is approximate equal to an orthographic projection area of the second electrode to the substrate.

Description

Light-emitting diode structure

This invention relates to a semiconductor structure, and more particularly to a light emitting diode structure.

Light-emitting diode (LED) structures have been widely used in the field of illumination and display because of their low power consumption, environmental protection, long service life and fast response rate.

In general, the light emitting diode structure has a P-type electrode pad and an N-type electrode pad, wherein the horizontal projection area of the P-type electrode pad is much smaller than the horizontal projected area of the N-type electrode pad. When the light emitting diode structure is to be assembled to a light board to form a light source module, since the area of the P type electrode pad and the N type electrode pad are different, alignment stability and assembly between the components during assembly are performed. After the flatness is not good. As a result, it is a procedure for the assembler who needs to spend more time on assembly.

The invention provides a light-emitting diode structure, wherein the front projection areas of the first electrode and the second electrode on the substrate are about the same, which can have better assembly convenience.

The light emitting diode structure of the present invention comprises a substrate, a semiconductor epitaxial layer, a current conducting layer, a first electrode and a second electrode. The semiconductor epitaxial layer is disposed on the substrate and has at least one convex portion and at least one concave portion. The current conducting layer is disposed on the epitaxial layer of the semiconductor and extends into the recess and is electrically connected to the epitaxial layer of the semiconductor. The first electrode is disposed on the current conducting layer and electrically connected to the semiconductor epitaxial layer. The second electrode is disposed on the current conducting layer and electrically connected to the semiconductor epitaxial layer, wherein the orthographic projection area of the first electrode on the substrate is slightly equal to the orthographic projection area of the second electrode on the substrate.

In an embodiment of the invention, a first top surface of the first electrode and a second top surface of the second electrode are at the same level.

In an embodiment of the invention, the light emitting diode structure further includes an ohmic contact layer disposed on the semiconductor epitaxial layer between the current conducting layer and the semiconductor epitaxial layer, wherein the ohmic contact layer and the semiconductor ray The crystal layer is electrically connected.

In an embodiment of the invention, the semiconductor epitaxial layer includes a first type semiconductor layer, a light emitting layer, and a second type semiconductor layer sequentially disposed on the substrate. A portion of the first type semiconductor layer defines a recess, and another portion of the first type semiconductor layer defines a convex portion with the light emitting layer and the second type semiconductor layer disposed thereon. The first electrode is electrically connected to the first type semiconductor layer through the current conducting layer, and the second electrode is electrically connected to the second type semiconductor layer through the ohmic contact layer.

In an embodiment of the invention, the current conducting layer includes a first current conducting layer and a second current conducting layer, a portion of the first current conducting layer extends into the recess and the second current conducting layer is disposed in the ohmic On the contact layer. The first electrode is electrically connected to the first type semiconductor layer through the first current conducting layer, and the second electrode is electrically connected to the second type semiconductor layer through the second current conducting layer and the ohmic contact layer.

In an embodiment of the invention, a third top surface of the first current conducting layer is at the same level as a fourth top surface of the second current conducting layer.

In an embodiment of the invention, the material of the ohmic contact layer comprises a transparent conductive material, a reflective conductive material or a combination of the two.

In an embodiment of the invention, the light emitting diode structure further includes an insulating layer disposed between the semiconductor epitaxial layer and the current conducting layer, and covering a sidewall of the protruding portion and extending into the recess, the insulating layer A portion of the recess is exposed to electrically connect the current conducting layer to the first type semiconductor layer.

In an embodiment of the invention, the light emitting diode structure further includes an electrical insulating layer disposed on the current conducting layer and located between the first electrode and the current conducting layer and the second electrode and the current conducting layer The second electrode is electrically insulated from the first electrode through the electrically insulating layer.

In an embodiment of the invention, the light emitting diode structure further includes at least one connecting member disposed in the recess of the semiconductor epitaxial layer and electrically connected to the first electrode and the semiconductor epitaxial layer.

In an embodiment of the invention, the material of the first electrode is different from the material of the connector.

In an embodiment of the invention, the front projection area of the first electrode on the substrate is smaller than the orthographic projection area of the current conducting layer on the substrate.

Based on the above, since the orthographic projection area of the first electrode on the substrate of the present invention is slightly equal to the orthographic projection area of the second electrode on the substrate, the horizontal projection area of the P-type electrode pad of the conventional light-emitting diode structure is compared. The light-emitting diode structure of the present invention can have better assembly convenience in terms of the horizontal projection area far smaller than that of the N-type electrode pad. In addition, since the light emitting diode structure of the present invention has a current conducting layer disposed on the epitaxial layer of the semiconductor, the external current is not directly transmitted from the first electrode to the semiconductor epitaxial layer, but needs to be transmitted through the current conducting layer. Therefore, the current can be uniformly dispersed by the buried current conducting layer, and the current transfer area and speed can be increased to reduce the probability of current congestion.

The above described features and advantages of the invention will be apparent from the following description.

FIG. 1A is a top plan view showing a structure of a light emitting diode according to an embodiment of the present invention, and FIG. 1B is a cross-sectional view along line I-I of FIG. 1A. Referring to FIG. 1A and FIG. 1B simultaneously, in the embodiment, the LED structure 100a includes a substrate 110, a semiconductor epitaxial layer 120, a current conducting layer 130, a first electrode 140 and a second electrode 150. . The semiconductor epitaxial layer 120 is disposed on the substrate 110 and has at least one convex portion 127 (two convex portions 127 are schematically illustrated in FIG. 1B ) and at least one concave portion 121 (two concave portions 121 are schematically illustrated in FIG. 1B ). . The current conducting layer 130 is disposed on the semiconductor epitaxial layer 120 and extends into the recess 121 and is electrically connected to the semiconductor epitaxial layer 120 . The first electrode 140 is disposed on the current conducting layer 130 and electrically connected to the semiconductor epitaxial layer 120 . The second electrode 150 is disposed on the current conducting layer 130 and electrically connected to the semiconductor epitaxial layer 120 . In particular, the orthographic projection area of the first electrode 140 on the substrate 110 is slightly equal to the orthographic projection area of the second electrode 150 on the substrate 110.

More specifically, the substrate 110 of the embodiment is, for example, a sapphire substrate, but is not limited thereto. The semiconductor epitaxial layer 120 includes a first type semiconductor layer 122, a light emitting layer 124, and a second type semiconductor layer 126 sequentially disposed on the substrate 110, wherein a portion of the first type semiconductor layer 122 defines a recess 121, and The other portion of the first type semiconductor layer 122 and the light emitting layer 124 and the second type semiconductor layer 126 thereon define a convex portion 127. As shown in FIG. 1B , the first electrode 140 is directly electrically connected to the first type semiconductor layer 122 of the semiconductor epitaxial layer 120 through the current conducting layer 130 . For example, the first type semiconductor layer 122 is an N type semiconductor layer, and the first electrode is an N type electrode.

In the present embodiment, the light emitting diode structure 100a further includes an ohmic contact layer 160, wherein the ohmic contact layer 160 is disposed for the purpose of increasing current conduction capability. Furthermore, the ohmic contact layer 160 is disposed on the semiconductor epitaxial layer 120 and between the current conducting layer 130 and the semiconductor layer epitaxial layer 120. Here, the second electrode 150 is electrically connected to the second type semiconductor layer 126 of the semiconductor epitaxial layer 120 directly through the ohmic contact layer 160 . That is, the ohmic contact layer 160 is electrically connected to the semiconductor epitaxial layer 120. Preferably, the orthographic projection area of the second electrode 150 on the substrate 110 is smaller than the orthographic projection area of the ohmic contact layer 160 on the substrate 110. As a result, the reaction efficiency of the light-emitting diode structure 100a can be improved by the good current dispersion and transfer rate of the ohmic contact layer 160. The material of the ohmic contact layer 160 is, for example, a transparent conductive material, a reflective conductive material, or a combination of the two, but is not limited thereto.

In particular, as shown in FIG. 1B, a first top surface 142 of the first electrode 140 of the present embodiment is located at the same level as a second top surface 152 of the second electrode 150. That is, the first top surface 142 of the first electrode 140 of the present embodiment is substantially aligned with the second top surface 152 of the second electrode 150. Since the orthographic projection area of the first electrode 140 on the substrate 110 of the embodiment is slightly equal to the orthographic projection area of the second electrode 150 on the substrate 110, and the first top surface 142 of the first electrode 140 and the second electrode 150 The two top surfaces 152 are located at the same level. Therefore, the light-emitting diode structure 100a of the present embodiment is convenient in assembly, and the problem that the assembly yield is poor due to the fact that the P-type electrode pad is much smaller than the area of the N-type electrode pad can be reduced. For example, when the LED structure 100a is crystallized (assembled) to another substrate (not shown) or a circuit board (not shown) by reflow, conventional electrodes of different areas may cause post-reflow The surface of the component is not flat, which reduces the reliability of the component, but the first electrode 140 and the second electrode 150 having the same area of the embodiment can solve the problem that the surface of the component after the die bonding is uneven. In addition, another effect of the embodiment is that the first electrode 140 and the second electrode 150 located at the same horizontal plane (ie, the same height) can simplify the solid crystal process, and the user does not need to specially design the substrate or the circuit due to the difference in height of the electrodes. The height of the pad on the board. Therefore, the design of the first electrode 140 and the second electrode 150 of the embodiment can improve the assembly efficiency and the assembly yield of the LED structure 100a.

In addition, the LED structure 100a of the present embodiment may further include an insulating layer 170 disposed between the semiconductor epitaxial layer 120 and the current conducting layer 130 and covering one sidewall 128 of the protrusion 127 and extending. Into the recess 121, the insulating layer 170 exposes a portion of the recess 121 to electrically connect the current conducting layer 130 to the first type semiconductor layer 122. Here, the current conducting layer 130 is electrically insulated from the ohmic contact layer 160 and the convex portion 127 of the semiconductor epitaxial layer 120 through the insulating layer 170, thereby preventing current from being directly conducted through the current conducting layer 130 to the first type semiconductor layer 122 and second. The type semiconductor layer 126 causes current to flow into the light-emitting layer 124 to cause component failure. In addition, the LED structure 100a of the present embodiment may further include an electrically insulating layer 180, wherein the electrically insulating layer 180 is disposed on the current conducting layer 130 and located between the first electrode 140 and the current conducting layer 130. The second electrode 150 and the current conducting layer 130 are electrically insulated from the first electrode 140 through the electrically insulating layer 180. Preferably, the electrical insulating layer 180 is connected to the insulating layer 170 to more effectively insulate the first electrode 140 and the second electrode 150.

Since the light emitting diode structure 100a of the present embodiment has the current conducting layer 130 disposed on the semiconductor epitaxial layer 120, the external current is not directly conducted from the first electrode 140 to the first type semiconductor layer of the semiconductor epitaxial layer 120. 122, but need to transmit through the current conducting layer 130, and the orthographic projection area of the first electrode 140 on the substrate 110 is smaller than the orthographic projection area of the current conducting layer 130 on the substrate 110, so that it can be buried by The current conducting layer 130 transmits current widely and discretely, effectively reducing the probability of current congestion.

It is to be noted that the following embodiments use the same reference numerals and parts of the above-mentioned embodiments, and the same reference numerals are used to refer to the same or similar elements, and the description of the same technical content is omitted. For the description of the omitted portions, reference may be made to the foregoing embodiments, and the following embodiments are not repeated.

2 is a cross-sectional view showing a structure of a light emitting diode according to another embodiment of the present invention. Referring to FIG. 2, the LED structure 100b of the present embodiment is similar to the LED structure 100a of FIG. 1B, but the main difference is that the LED structure 100b of the embodiment further includes at least one The connector 190 is schematically disposed in the recess 121 of the semiconductor epitaxial layer 120 and electrically connected to the first electrode 140 and the semiconductor epitaxial layer 120. More specifically, the first electrode 140 is electrically connected to the first type semiconductor layer 122 of the semiconductor epitaxial layer 120 through the current conducting layer 130 and the connecting member 190. Here, the materials of the first electrode 140, the current conducting layer 130 and the connecting member 190 may be the same or different, and are preferably different materials. The material of the first electrode 140 is selected from the group consisting of gold, tin, gold-tin alloy, two or more alloy materials, and one of the above-mentioned groups. The material of the current conducting layer 130 and the connecting member 190 is selected from the group consisting of chromium, platinum, gold, aluminum, alloys of the above materials, and one of the above-mentioned groups. Different materials make the first electrode 140 and the current conducting layer 130, or the current conducting layer 130 and the connecting member 190 have better electrical connection, especially when the material of the connecting member 190 is chrome aluminum alloy, the current conducting layer 130 and The adhesion of the semiconductor epitaxial layer 120 is better, but it is not limited thereto.

3 is a cross-sectional view showing a structure of a light emitting diode according to another embodiment of the present invention. Referring to FIG. 3, the LED structure 100c of the present embodiment is similar to the LED structure 100a of FIG. 1B, but the main difference is that the current conducting layer of the LED structure 100c of the present embodiment is 130' includes a first current conducting layer 130a and a second current conducting layer 130b. A portion of the first current conducting layer 130a extends into the recess 121, while another portion of the first current conducting layer 130a is disposed on the insulating layer 170, and the second current conducting layer 130b is disposed on the ohmic contact layer 160. In particular, the first electrode 140 is electrically connected to the first type semiconductor layer 122 through the first current conducting layer 130a, and the second electrode 150 is electrically transmitted through the second current conducting layer 130b and the ohmic contact layer 160 and the second type semiconductor layer 126. Sexual connection. As a result, an external current (not shown) is not directly transmitted from the first electrode 140 and the second electrode 150 to the semiconductor epitaxial layer 120, but needs to be transmitted through the current conducting layer 130'. Preferably, the orthographic projection area of the first electrode 140 on the substrate 110 is smaller than the orthographic projection area of the first current transmission layer 130a on the substrate 110, and the orthographic projection area of the second electrode 150 on the substrate 110 is smaller than the second current transmission. The orthographic projection area of the layer 130b on the substrate 110 can improve the reaction efficiency of the light-emitting diode structure 100c by the good current dispersion and transfer rate of the current transport layer 130', thereby reducing the probability of current congestion.

In addition, as shown in FIG. 3, a third top surface 132a of the first current conducting layer 130a of the present embodiment is located at the same level as a fourth top surface 132b of the second current conducting layer 130b. That is, the third top surface 132a of the first current conducting layer 130a of the present embodiment is substantially aligned with the fourth top surface 132b of the second current conducting layer 130b, so that the first current conducting layer can be simultaneously The first electrode 140 and the second electrode 150 are formed on the 130a and the second current conducting layer 130b, and the first top surface 142 of the first electrode 140 and the second top surface 152 of the second electrode 150 are made equal by only one process. The first electrode 140 and the second electrode 150 are grown at the same level, so that the first electrode 140 and the second electrode 150 are flattened, and the first electrode 140 and the second electrode 150 are grown at the same level. It has better reliability when the component is crystallized. Moreover, since most of the high-priced gold or gold-tin alloy is used as the material of the first electrode 140 and the second electrode 150, the embodiment can also reduce the amount of gold and reduce the process cost.

4 is a cross-sectional view showing a structure of a light emitting diode according to another embodiment of the present invention. Referring to FIG. 4, the LED structure 100d of the present embodiment is similar to the LED structure 100c of FIG. 3, but the main difference is that the LED structure 100d of the embodiment further includes at least one The connector 190 is schematically disposed in the recess 121 of the semiconductor epitaxial layer 120 and electrically connected to the first electrode 140 and the semiconductor epitaxial layer 120. More specifically, the first electrode 140 is electrically connected to the first type semiconductor layer 122 of the semiconductor epitaxial layer 120 through the first current conducting layer 130a and the connecting member 190. The second electrode 140 is electrically connected to the second type semiconductor layer 126 of the semiconductor epitaxial layer 120 through the second current conducting layer 130b and the ohmic contact layer 160. Here, the materials of the first electrode 140, the first current conducting layer 130a and the connecting member 190 may be the same or different, preferably different materials. The material of the first electrode 140 is selected from the group consisting of gold, tin, gold-tin alloy, two or more alloy materials, and one of the above-mentioned groups. The material of the first current conducting layer 130a and the connecting member 190 is selected from the group consisting of chromium, platinum, gold, aluminum, alloys of the above materials, and one of the above-mentioned groups. The material is different to make the first electrode 140 and the first current conducting layer 130a, or the first current conducting layer 130a and the connecting member 190 have better electrical connection, especially when the material of the connecting member 190 is chrome aluminum alloy, first The adhesion of the current conducting layer 130a to the semiconductor epitaxial layer 120 is better, but is not limited thereto.

In summary, since the orthographic projection area of the first electrode on the substrate of the present invention is slightly equal to the orthographic projection area of the second electrode on the substrate, the level of the P-type electrode pad of the conventional light-emitting diode structure is compared. The light-emitting diode structure of the present invention can have better assembly convenience and improve the problem of poor flatness after assembly, in that the projected area is much smaller than the horizontal projected area of the N-type electrode pad. In addition, since the light emitting diode structure of the present invention has a current conducting layer disposed on the epitaxial layer of the semiconductor, the external current is not directly transmitted from the first electrode to the semiconductor epitaxial layer, but needs to be transmitted through the current conducting layer. It can increase the current transmission rate and transmission area and reduce the probability of current congestion. In addition, with the design that the top surface of the first electrode and the second electrode are at the same level, and subsequently solid crystallizing the LED structure to other substrates or circuit boards, the user does not need to specially design the substrate due to the difference in height of the electrodes or The height of the pads on the board simplifies the assembly process.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

100a, 100b, 100c, 100d‧‧‧Lighting diode structure
110‧‧‧Substrate
120‧‧‧Semiconductor epitaxial layer
121‧‧‧ recess
122‧‧‧First type semiconductor layer
124‧‧‧Lighting layer
126‧‧‧Second type semiconductor layer
127‧‧‧ convex
128‧‧‧ side wall
130, 130'‧‧‧ current conduction layer
130a‧‧‧First current conducting layer
130b‧‧‧second current conducting layer
132a‧‧‧ third top surface
132b‧‧‧Four top surface
140‧‧‧First electrode
142‧‧‧First top surface
150‧‧‧second electrode
152‧‧‧ second top surface
160‧‧‧Ohm contact layer
170‧‧‧Insulation
180‧‧‧Electrical insulation
190‧‧‧Connecting parts

FIG. 1A is a top plan view showing a structure of a light emitting diode according to an embodiment of the invention. FIG. 1B is a cross-sectional view taken along line I-I of FIG. 1A. 2 is a cross-sectional view showing a structure of a light emitting diode according to another embodiment of the present invention. 3 is a cross-sectional view showing a structure of a light emitting diode according to another embodiment of the present invention. 4 is a cross-sectional view showing a structure of a light emitting diode according to another embodiment of the present invention.

100a‧‧‧Lighting diode structure

110‧‧‧Substrate

120‧‧‧Semiconductor epitaxial layer

121‧‧‧ recess

122‧‧‧First type semiconductor layer

124‧‧‧Lighting layer

126‧‧‧Second type semiconductor layer

127‧‧‧ convex

128‧‧‧ side wall

130‧‧‧current conduction layer

140‧‧‧First electrode

142‧‧‧First top surface

150‧‧‧second electrode

152‧‧‧ second top surface

160‧‧‧Ohm contact layer

170‧‧‧Insulation

180‧‧‧Electrical insulation

Claims (15)

A light emitting diode structure comprising: a semiconductor epitaxial layer comprising a first type semiconductor layer, a second type semiconductor layer, and a quantum well layer, the quantum well layer being located in the first type semiconductor layer and the second Between the semiconductor layers, wherein the semiconductor epitaxial layer is formed with a plurality of recesses penetrating the second type semiconductor layer, the quantum well layer and a portion of the first type semiconductor layer and exposing the first type semiconductor a plurality of connecting members respectively disposed in the recesses and electrically connected to the first type semiconductor layer; a first current conducting layer disposed on the semiconductor epitaxial layer and electrically connected to the connecting member; a first insulating layer disposed between the semiconductor epitaxial layer and the first current conducting layer; a first electrode disposed on the semiconductor epitaxial layer and electrically connected to the current conducting layer; An electrode is disposed on the epitaxial layer of the semiconductor and electrically connected to the second semiconductor layer; and a second insulating layer is disposed between the epitaxial layer of the semiconductor and the second electrode. The light emitting diode structure of claim 1, wherein the area of the first electrode is smaller than the area of the first current conducting layer. The light emitting diode structure of claim 1, wherein the second insulating layer is disposed between at least a portion of the first current conducting layer and the second electrode. The light emitting diode structure of claim 1, wherein the second insulating layer covers at least a portion of the recess. The illuminating diode structure of claim 3, wherein the second insulating layer has a first opening to expose the first current conducting layer, and the first opening and at least one of the recesses are at least Partial overlap. An ohmic contact layer, wherein the ohmic contact layer is disposed on the second type semiconductor layer and electrically connected to the second An electrode and the second type semiconductor layer. The light emitting diode structure of claim 6, wherein the ohmic contact layer surrounds the recesses. The illuminating diode structure of claim 1, further comprising: a second current conducting layer disposed on the semiconductor epitaxial layer, wherein the second current conducting layer is electrically connected to the second electrode The second type semiconductor layer. The illuminating diode structure of claim 8, further comprising an ohmic contact layer, wherein the ohmic contact layer is electrically connected to the second current conducting layer and the second type semiconductor layer. The illuminating diode structure of claim 8, wherein the second insulating layer covers at least a portion of the contact surface of the second current conducting layer and the ohmic contact layer. The light emitting diode structure of claim 8, wherein the second current conducting layer is disposed between the first insulating layer and the second insulating layer. A method for fabricating a light emitting diode, comprising: forming a semiconductor epitaxial layer on a substrate, the semiconductor epitaxial layer sequentially including a first type semiconductor layer, a quantum well layer, and a second type semiconductor layer; The semiconductor epitaxial layer is defined, and a plurality of recesses are defined on the semiconductor device layer, wherein the recesses penetrate the second type semiconductor layer, the quantum well layer and a portion of the first type semiconductor layer and expose the first Forming a first insulating layer on the epitaxial layer of the semiconductor, and exposing the first type of semiconductor layer in the recesses; forming a connecting member in each of the recesses, each of the connecting members Electrically connecting the first type semiconductor layer; forming a first current conducting layer on the first insulating layer, the first current conducting layer is electrically connected to the connecting members; and forming on the semiconductor epitaxial layer respectively a first electrode and a second electrode, wherein the first electrode is electrically connected to the first current conducting layer, and the second electrode is electrically connected to the second type semiconductor layer. The method for fabricating a light emitting diode structure according to claim 12, further comprising: forming a second current conducting layer between the second type semiconductor layer and the second electrode, wherein the second current conducting layer The layer electrically connects the second electrode and the second type semiconductor layer. The method for fabricating a light emitting diode structure according to claim 13, further comprising: forming an ohmic contact layer between the second type semiconductor layer and the second current conducting layer, wherein the ohmic contact layer is electrically The second current conducting layer and the second type semiconductor layer are connected. The method for fabricating a light emitting diode structure according to claim 12, further comprising: forming a second insulating layer on the semiconductor epitaxial layer and covering at least a portion of the first current conducting layer, and An opening is formed in the second insulating layer, and the first electrode is electrically connected to the first current conducting layer via the opening.