TW201642344A - 鈍化處理方法、半導體構造之形成方法以及半導體構造 - Google Patents
鈍化處理方法、半導體構造之形成方法以及半導體構造 Download PDFInfo
- Publication number
- TW201642344A TW201642344A TW105111968A TW105111968A TW201642344A TW 201642344 A TW201642344 A TW 201642344A TW 105111968 A TW105111968 A TW 105111968A TW 105111968 A TW105111968 A TW 105111968A TW 201642344 A TW201642344 A TW 201642344A
- Authority
- TW
- Taiwan
- Prior art keywords
- gas
- substrate
- film
- passivation
- hydrogen sulfide
- Prior art date
Links
- 238000002161 passivation Methods 0.000 title claims abstract description 92
- 238000000034 method Methods 0.000 title claims abstract description 47
- 239000004065 semiconductor Substances 0.000 title claims description 26
- 239000000758 substrate Substances 0.000 claims abstract description 123
- 239000007789 gas Substances 0.000 claims abstract description 85
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 70
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims abstract description 55
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 44
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 44
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 20
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 17
- 239000011593 sulfur Substances 0.000 claims abstract description 17
- 239000011669 selenium Substances 0.000 claims abstract description 14
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 13
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 7
- 238000012545 processing Methods 0.000 claims description 41
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 2
- 230000007547 defect Effects 0.000 abstract description 28
- 239000000463 material Substances 0.000 abstract description 12
- 229910000069 nitrogen hydride Inorganic materials 0.000 abstract 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 43
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 27
- 229910052707 ruthenium Inorganic materials 0.000 description 27
- 229910052715 tantalum Inorganic materials 0.000 description 22
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 22
- 229910005793 GeO 2 Inorganic materials 0.000 description 15
- 230000008569 process Effects 0.000 description 14
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 12
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 12
- 239000003990 capacitor Substances 0.000 description 11
- 239000010410 layer Substances 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 6
- 229910005839 GeS 2 Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229910000058 selane Inorganic materials 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 3
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 3
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910005542 GaSb Inorganic materials 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000011066 ex-situ storage Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910003855 HfAlO Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- UYJXRRSPUVSSMN-UHFFFAOYSA-P ammonium sulfide Chemical compound [NH4+].[NH4+].[S-2] UYJXRRSPUVSSMN-UHFFFAOYSA-P 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- KWLSQQRRSAWBOQ-UHFFFAOYSA-N dipotassioarsanylpotassium Chemical compound [K][As]([K])[K] KWLSQQRRSAWBOQ-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- VDNSGQQAZRMTCI-UHFFFAOYSA-N sulfanylidenegermanium Chemical compound [Ge]=S VDNSGQQAZRMTCI-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015086251A JP2016207789A (ja) | 2015-04-20 | 2015-04-20 | パッシベーション処理方法、半導体構造の形成方法及び半導体構造 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201642344A true TW201642344A (zh) | 2016-12-01 |
Family
ID=57143890
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105111968A TW201642344A (zh) | 2015-04-20 | 2016-04-18 | 鈍化處理方法、半導體構造之形成方法以及半導體構造 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2016207789A (ko) |
| KR (1) | KR20170127567A (ko) |
| TW (1) | TW201642344A (ko) |
| WO (1) | WO2016170988A1 (ko) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI784222B (zh) * | 2018-12-25 | 2022-11-21 | 日商昭和電工股份有限公司 | 附著物之去除方法及成膜方法 |
| TWI807227B (zh) * | 2019-11-19 | 2023-07-01 | 日商昭和電工股份有限公司 | 附著物除去方法及成膜方法 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018022715A (ja) * | 2016-08-01 | 2018-02-08 | 株式会社Ｓｃｒｅｅｎホールディングス | ドーパント導入方法 |
| SG11202106420QA (en) * | 2018-12-18 | 2021-07-29 | Showa Denko Kk | Adhesion removal method and film-forming method |
| KR102662111B1 (ko) * | 2018-12-25 | 2024-05-03 | 가부시끼가이샤 레조낙 | 부착물 제거 방법 및 성막 방법 |
| EP4060076A4 (en) * | 2019-11-12 | 2023-01-25 | Showa Denko K.K. | METHODS FOR REMOVAL OF ADHESIVE SUBSTANCES AND FILM FORMING METHODS |
| EP4080549A4 (en) | 2019-12-17 | 2023-07-26 | Resonac Corporation | PASSIVATION FILM MANUFACTURING PROCESS |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58141576A (ja) * | 1982-02-17 | 1983-08-22 | Nec Corp | 電界効果型トランジスタ |
| JP2780501B2 (ja) * | 1991-01-18 | 1998-07-30 | 日立電線株式会社 | 絶縁膜付き半導体ウェハ及びその製造方法 |
| US7521376B2 (en) * | 2005-10-26 | 2009-04-21 | International Business Machines Corporation | Method of forming a semiconductor structure using a non-oxygen chalcogen passivation treatment |
| US7964490B2 (en) * | 2008-12-31 | 2011-06-21 | Intel Corporation | Methods of forming nickel sulfide film on a semiconductor device |
| EP2306497B1 (en) * | 2009-10-02 | 2012-06-06 | Imec | Method for manufacturing a low defect interface between a dielectric and a III/V compound |
| US9673038B2 (en) * | 2014-07-10 | 2017-06-06 | Tokyo Electron Limited | Gas phase oxide removal and passivation of germanium-containing semiconductors and compound semiconductors |
-
2015
- 2015-04-20 JP JP2015086251A patent/JP2016207789A/ja active Pending
-
2016
- 2016-04-06 WO PCT/JP2016/061322 patent/WO2016170988A1/ja active Application Filing
- 2016-04-06 KR KR1020177030094A patent/KR20170127567A/ko not_active Application Discontinuation
- 2016-04-18 TW TW105111968A patent/TW201642344A/zh unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI784222B (zh) * | 2018-12-25 | 2022-11-21 | 日商昭和電工股份有限公司 | 附著物之去除方法及成膜方法 |
| TWI807227B (zh) * | 2019-11-19 | 2023-07-01 | 日商昭和電工股份有限公司 | 附著物除去方法及成膜方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2016170988A1 (ja) | 2016-10-27 |
| KR20170127567A (ko) | 2017-11-21 |
| JP2016207789A (ja) | 2016-12-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW201642344A (zh) | 鈍化處理方法、半導體構造之形成方法以及半導體構造 | |
| US9911676B2 (en) | System and method for gas-phase passivation of a semiconductor surface | |
| US9905492B2 (en) | System and method for gas-phase passivation of a semiconductor surface | |
| US11670553B2 (en) | Gate stack treatment | |
| Kobayashi et al. | Nitric acid oxidation of Si (NAOS) method for low temperature fabrication of SiO2/Si and SiO2/SiC structures | |
| US11081339B2 (en) | Single-crystal rare earth oxide grown on III-V compound | |
| US20140035001A1 (en) | Compound semiconductor structure | |
| Misra | High k dielectrics on high-mobility substrates: The interface! | |
| US9647094B2 (en) | Method of manufacturing a semiconductor heteroepitaxy structure | |
| Liu et al. | In situ Surface Passivation of Gallium Nitride for Metal–Organic Chemical Vapor Deposition of High-Permittivity Gate Dielectric | |
| Jung et al. | Influence of in-situ NH3 plasma passivation on the electrical characteristics of Ga-face n-GaN MOS capacitor with atomic layer deposited HfO2 | |
| TW201417192A (zh) | 半導體晶圓的製造方法、半導體晶圓、半導體裝置的製造方法及半導體裝置 | |
| TWI754684B (zh) | 用於半導體表面之氣相鈍化的系統及方法 | |
| US8691636B2 (en) | Method for removing germanium suboxide | |
| Tsai et al. | Interface characterization of HfO 2/GaSb MOS capacitors with ultrathin equivalent oxide thickness by using hydrogen plasma treatment | |
| Araki et al. | Dependence of Atomic-Scale Si (110) Surface Roughness on Hydrogen Introduction Temperature after High-Temperature Ar Annealing | |
| KR102720715B1 (ko) | 반도체 표면의 기상 패시베이션을 위한 시스템 | |
| De Jaeger et al. | Ge deep sub-micron pFETs with etched TaN metal gate on a high-k dielectric, fabricated in a 200mm silicon prototyping line | |
| Kar et al. | Physics and Technology of High-k Materials 9 | |
| Ruan et al. | Improved Electrical Characteristics of Ge FinFET CMOS by Plasma-Enhanced Oxidation and Partial Nitridation with Supercritical Fluid Treatment | |
| CN106486357B (zh) | 半导体结构的形成方法 | |
| Lechaux et al. | Improvement of interfacial and electrical properties of Al2O3/n-Ga0. 47In0. 53As for III-V impact ionization MOSFETs | |
| Tong et al. | Siconi Process Applications Study for 28nm Technology Node and Beyond | |
| Wee et al. | Interfacial X-ray photospectrometry study of In^ sub 0.53^ Ga^ sub 0.47^ As under different passivation treatments for metal oxide semiconductor field effect transistor devices | |
| Lee et al. | Quality Improvements of Titanium Oxide/Gallium Arsenide MOS Capacitors by Post-Metallization Annealing and Sulfur-Treatment |