TW201633559A - 發光元件及其製造方法 - Google Patents
發光元件及其製造方法 Download PDFInfo
- Publication number
- TW201633559A TW201633559A TW104141362A TW104141362A TW201633559A TW 201633559 A TW201633559 A TW 201633559A TW 104141362 A TW104141362 A TW 104141362A TW 104141362 A TW104141362 A TW 104141362A TW 201633559 A TW201633559 A TW 201633559A
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- photonic crystal
- band
- wavelength
- point
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 55
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000004038 photonic crystal Substances 0.000 claims abstract description 94
- 230000000737 periodic effect Effects 0.000 claims abstract description 59
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 49
- 239000004065 semiconductor Substances 0.000 claims abstract description 22
- 238000013461 design Methods 0.000 claims abstract description 11
- 238000000605 extraction Methods 0.000 claims description 34
- 238000009826 distribution Methods 0.000 claims description 30
- 238000005457 optimization Methods 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 13
- 238000004364 calculation method Methods 0.000 claims description 12
- 238000012546 transfer Methods 0.000 claims description 6
- 238000001459 lithography Methods 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 4
- 230000003247 decreasing effect Effects 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000004049 embossing Methods 0.000 claims description 2
- 238000007906 compression Methods 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 230000001568 sexual effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 20
- 239000000758 substrate Substances 0.000 description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 17
- 229910052760 oxygen Inorganic materials 0.000 description 17
- 239000001301 oxygen Substances 0.000 description 17
- 230000005684 electric field Effects 0.000 description 11
- 230000007547 defect Effects 0.000 description 10
- 230000005855 radiation Effects 0.000 description 9
- 101000617708 Homo sapiens Pregnancy-specific beta-1-glycoprotein 1 Proteins 0.000 description 8
- 102100022024 Pregnancy-specific beta-1-glycoprotein 1 Human genes 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 230000000875 corresponding effect Effects 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000013598 vector Substances 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 238000005094 computer simulation Methods 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014248769 | 2014-12-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201633559A true TW201633559A (zh) | 2016-09-16 |
Family
ID=56107434
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104141362A TW201633559A (zh) | 2014-12-09 | 2015-12-09 | 發光元件及其製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| TW (1) | TW201633559A (fr) |
| WO (1) | WO2016093257A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI750387B (zh) * | 2017-06-27 | 2021-12-21 | 法商艾勒迪亞公司 | 光電元件 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019146737A1 (fr) * | 2018-01-26 | 2019-08-01 | 丸文株式会社 | Del ultraviolette profonde et son procédé de production |
| CN116169200A (zh) * | 2023-04-26 | 2023-05-26 | 北京心灵方舟科技发展有限公司 | 一种近红外敏感硅光电倍增管及其制作工艺方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2475006B1 (fr) * | 2003-07-16 | 2015-09-30 | Panasonic Intellectual Property Management Co., Ltd. | Dispositif électroluminescent semi-conducteur, son procédé de fabrication, et appareil d'éclairage et appareil d'affichage l'utilisant |
| KR101341374B1 (ko) * | 2007-07-30 | 2013-12-16 | 삼성전자주식회사 | 광자결정 발광소자 및 그 제조방법 |
| WO2012012409A2 (fr) * | 2010-07-19 | 2012-01-26 | Rensselaer Polytechnic Institute | Diode électroluminescente polarisée intégrée avec rotateur incorporé |
| EP2733752B1 (fr) * | 2011-07-12 | 2016-10-05 | Marubun Corporation | Élément électroluminescent et son procédé de fabrication |
| KR101354516B1 (ko) * | 2012-03-07 | 2014-01-23 | 가부시키가이샤 알박 | 장치의 제조 방법 |
-
2015
- 2015-12-09 WO PCT/JP2015/084461 patent/WO2016093257A1/fr active Application Filing
- 2015-12-09 TW TW104141362A patent/TW201633559A/zh unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI750387B (zh) * | 2017-06-27 | 2021-12-21 | 法商艾勒迪亞公司 | 光電元件 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2016093257A1 (fr) | 2016-06-16 |
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