TW201632868A - Substrate examination device - Google Patents

Substrate examination device Download PDF

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Publication number
TW201632868A
TW201632868A TW104140206A TW104140206A TW201632868A TW 201632868 A TW201632868 A TW 201632868A TW 104140206 A TW104140206 A TW 104140206A TW 104140206 A TW104140206 A TW 104140206A TW 201632868 A TW201632868 A TW 201632868A
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TW
Taiwan
Prior art keywords
substrate
polarized
unit
inspection
light
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TW104140206A
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Chinese (zh)
Inventor
Kazuyoshi Suzuki
Junichi Matsumura
Hiroyuki Ueda
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Toray Eng Co Ltd
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Publication of TW201632868A publication Critical patent/TW201632868A/en

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/958Inspecting transparent materials or objects, e.g. windscreens

Abstract

Provided is a substrate examination device such that even if a substrate to be examined becomes thin, the device can exam the front surface-side and the rear surface-side of the substrate, separately for the front and the rear, and do so with high accuracy and quickly. More specifically, the substrate examination device is provided with the following: a substrate retaining part; an illumination unit; a splitting and polarizing unit; an S polarization image pickup unit; a P polarization image pickup unit; and a foreign matter examination unit. The foreign matter examination unit is provided with a foreign matter adhered surface determination unit that compares the results of image pickup by the S polarization image pickup unit and examination and the results of image pickup by the P polarization image pickup unit and examination, and from the magnitude relation of scattered light intensity at the same position on the substrate to be examined, determines whether foreign matter has adhered to either the front surface-side or the rear surface-side of the substrate to be examined.

Description

基板檢查裝置 Substrate inspection device

本發明係關於一種光學性地檢查有無附著於玻璃基板等透明體(所謂之基板)之正面側或其背面側之異物或損傷等缺陷之裝置。 The present invention relates to an apparatus for optically inspecting the presence or absence of defects such as foreign matter or damage attached to the front side or the back side of a transparent body (so-called substrate) such as a glass substrate.

於先前之液晶面板之表面缺陷檢查中,於基板之正面側及其背面側之各者對稱地配置檢測光學系統,而對正面側之缺陷及背面側之缺陷分開進行檢查。(例如專利文獻1)。 In the surface defect inspection of the conventional liquid crystal panel, the detection optical system was disposed symmetrically on each of the front side and the back side of the substrate, and the defects on the front side and the defects on the back side were separately examined. (for example, Patent Document 1).

又,如下技術正被實用化,即:對檢查對象基板自斜向照射線狀之照明光,將焦點深度小於檢查對象基板之厚度之成像光學系統相對於基板正面配置成90度之受光角度,而能夠不混淆檢查對象基板之正面側及背面側地一次性進行檢查(例如專利文獻2)。 In addition, the following technique is applied to illuminate linear illumination light obliquely from the inspection target substrate, and the imaging optical system having a depth of focus smaller than the thickness of the inspection target substrate is disposed at a light receiving angle of 90 degrees with respect to the front surface of the substrate. On the other hand, the inspection can be performed at one time without confusing the front side and the back side of the inspection target substrate (for example, Patent Document 2).

圖10係表示先前之基板檢查裝置之一例之外觀圖。先前之基板檢查裝置1z係自照明部3z朝向成為檢查對象之基板Wz之檢查對象區域Rz照射照明光32z,使用配置於基板Wz之上方之攝像部4z之攝像相機42z、透鏡43z拍攝自檢查對象區域Rz放出之散射光,並基於拍攝到之圖像進行檢查。再者,基板Wz保持於基板載置台20上,基板載置台20安裝於安裝在裝置框架11z上之X軸平台61及Y軸平台62上,且可沿XY方向以特定之速度移動,並於特定之位置停止。又,攝像相機42z係以基板Wz之檢查對象區域Rz之法線與光軸方向一致之方式(即於相對於基板Wz之正面垂直之方向),經由連結構件15z而安裝於裝置框架11z。因此,可使基板Wz與攝像部4z相對(即,將基板Wz整體 沿X方向分割成複數個,並重複進行沿Y方向以固定速度進行掃描動作之動作)而進行拍攝、檢查。 Fig. 10 is a perspective view showing an example of a conventional substrate inspection apparatus. In the previous inspection apparatus 1z, the illumination light 32z is irradiated from the illumination unit 3z toward the inspection target region Rz of the substrate Wz to be inspected, and the imaging camera 42z and the lens 43z disposed in the imaging unit 4z disposed above the substrate Wz are imaged. The scattered light emitted by the area Rz is checked based on the captured image. Further, the substrate Wz is held on the substrate stage 20, and the substrate stage 20 is mounted on the X-axis stage 61 and the Y-axis stage 62 mounted on the apparatus frame 11z, and is movable at a specific speed in the XY direction. The specific location stops. In addition, the imaging camera 42z is attached to the apparatus frame 11z via the connecting member 15z so that the normal line of the inspection target region Rz of the substrate Wz coincides with the optical axis direction (that is, the direction perpendicular to the front surface of the substrate Wz). Therefore, the substrate Wz can be opposed to the imaging portion 4z (that is, the substrate Wz as a whole) The image is cut and divided by dividing into a plurality of X directions and repeating the scanning operation at a fixed speed in the Y direction.

此時,於攝像部4中,首先,於聚焦於基板Wz之正面側之狀態下進行掃描及拍攝,繼而,於聚焦於基板Wz之背面側之狀態下進行掃描及拍攝。亦即,於先前之基板檢查裝置1z中,進行所謂之二次掃描下之拍攝,而進行檢查。 At this time, in the imaging unit 4, first, scanning and imaging are performed in a state where the front side of the substrate Wz is focused, and then scanning and imaging are performed while focusing on the back side of the substrate Wz. That is, in the previous substrate inspection apparatus 1z, the so-called second scanning is performed to perform inspection.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利特開平3-188491號公報 [Patent Document 1] Japanese Patent Laid-Open No. Hei 3-188491

[專利文獻2]日本專利4104924號公報 [Patent Document 2] Japanese Patent No. 4104924

[專利文獻3]日本專利特開平5-52762號公報 [Patent Document 3] Japanese Patent Laid-Open No. Hei 5-52762

於欲迅速地檢查有無附著於檢查對象基板之正面側及背面側之異物或損傷等缺陷之情形時,若為如專利文獻1所示般之需要2組檢查用光學系統之裝置構成,則會導致檢查裝置本身之成本增加或尺寸增加。 When it is desired to quickly check for the presence of defects such as foreign matter or damage on the front side and the back side of the substrate to be inspected, if it is a device that requires two sets of optical systems for inspection as shown in Patent Document 1, This leads to an increase in cost or an increase in size of the inspection device itself.

另一方面,即便於如專利文獻2所示般使用設置1個檢查用光學系統且可對檢查對象基板之正面側及其背面側分開地進行檢查之裝置進行一次掃描下之拍攝、檢查之情形時,若檢查對象基板越來越薄(例如若厚度變得薄於0.4mm),則會因如下所述之理由而難以正背分離。 On the other hand, in the case where one inspection optical system is provided, and the apparatus for inspecting the front side and the back side of the inspection target substrate separately can be photographed and inspected in one scan, as shown in the patent document 2 At this time, if the inspection target substrate becomes thinner (for example, if the thickness becomes thinner than 0.4 mm), it is difficult to separate the front and back due to the reason described below.

圖11係表示使用先前之基板檢查裝置對基板之正面及背面進行檢查之情況之概念圖,且係複合地圖示對成為檢查對象之基板Wz照射照明光32z並拍攝於附著於基板之異物漫反射之散射光之情況、及藉由攝像部拍攝之來自異物X1、X2之散射光之強度之圖。再者,圖 11(a)表示針對自先前以來一直被作為檢查對象之基板Wz(厚度tz:0.5~0.7mm)進行檢查之情況,圖11(b)表示針對較先前薄之基板W(厚度t:0.4mm以下)進行檢查之情況。自照明部照射之照明光32z分別於附著於基板Wz、W之正面側之異物X1及附著於基板Wz、W之背面側之異物X2之表面漫反射,其等之散射光通過攝像部4z之透鏡43z,並成像,且被攝像相機42z拍攝。 FIG. 11 is a conceptual view showing a state in which the front and back surfaces of the substrate are inspected using the conventional substrate inspection device, and the substrate Wz to be inspected is irradiated with the illumination light 32z in a composite manner, and is photographed on the foreign matter attached to the substrate. The case of the scattered light reflected and the intensity of the scattered light from the foreign objects X1 and X2 captured by the imaging unit. Again, the map 11(a) shows the case where the substrate Wz (thickness tz: 0.5 to 0.7 mm) which has been inspected since the previous inspection is performed, and FIG. 11(b) shows the substrate W (thickness t: 0.4 mm) which is thinner than the previous one. The following is the case for inspection. The illumination light 32z irradiated from the illumination unit is diffused and reflected on the surface of the foreign matter X1 adhering to the front side of the substrates Wz and W and the foreign matter X2 adhering to the back side of the substrates Wz and W, respectively, and the scattered light passes through the imaging unit 4z. The lens 43z is imaged and photographed by the camera camera 42z.

若為先前之基板Wz,則正面側之異物X1、及背面側之異物X2之散射光分別於分離之位置成像,因此可於分離之狀態下進行檢測。但是,若為較先前薄之基板W,則正面側之異物X1與背面側之異物X2之散射光重疊,因此難以分離地進行檢測。 In the case of the previous substrate Wz, the scattered light of the foreign material X1 on the front side and the foreign matter X2 on the back side are respectively imaged at the separated position, so that the detection can be performed in the separated state. However, in the case of the substrate W which is thinner than the previous one, the foreign matter X1 on the front side and the scattered light X2 on the back side overlap with each other, and thus it is difficult to detect separately.

又,於專利文獻3所示般之構成中,將受光系統之受光角度設定為相對於基板之正面之法線為80度左右。但是,於該情形時,來自基板背面側之散射光藉由基板內面而反射,因此,藉由受光系統觀察到之光成為極微弱者,而難以穩定地檢查背面側之異物。 Further, in the configuration shown in Patent Document 3, the light receiving angle of the light receiving system is set to be about 80 degrees with respect to the normal line of the front surface of the substrate. However, in this case, since the scattered light from the back surface side of the substrate is reflected by the inner surface of the substrate, the light observed by the light receiving system becomes extremely weak, and it is difficult to stably inspect the foreign matter on the back side.

因此,本發明之目的在於提供一種即便檢查對象基板變薄,亦能夠正背分離地高精度且迅速地檢查基板之正面側及其背面側之基板檢查裝置。 In view of the above, it is an object of the present invention to provide a substrate inspection apparatus capable of inspecting the front side and the back side of a substrate with high precision and speed, even when the inspection target substrate is thinned.

為了解決以上問題,本發明係一種基板檢查裝置,其具備:基板保持部,其保持成為檢查對象之基板;照明部,其朝向設定於上述基板上之檢查對象區域照射照明光;分離偏光部,其將自上述檢查對象區域發出之散射光分離成S偏光狀態之光及P偏光狀態之光;S偏光攝像部,其拍攝上述散射光中被分離之S偏光狀態之光;P偏光攝像部,其拍攝上述散射光中被分離之P偏光狀態之光; 及異物檢查部,其基於藉由上述S偏光攝像部及上述P偏光攝像部所拍攝到之圖像,檢查附著於該成為檢查對象之基板之正面側或背面側之異物之位置及大小;且於上述異物檢查部中具備異物附著面判定部,該異物附著面判定部係比較藉由上述S偏光攝像部拍攝並檢查所得之結果、與藉由上述P偏光攝像部拍攝並檢查所得之結果,並根據成為檢查對象之基板上之同一位置之散射光強度之大小關係,判定異物附著於該成為檢查對象之基板之正面側或背面側之哪一者。 In order to solve the above problems, the present invention provides a substrate inspection apparatus including: a substrate holding portion that holds a substrate to be inspected; and an illumination portion that irradiates illumination light toward an inspection target region set on the substrate; and separates the polarizing portion. The S-polarized imaging unit captures the S-polarized light that is separated from the scattered light, and the P-polarized imaging unit And photographing the separated P-polarized light of the scattered light; And a foreign matter inspection unit that checks a position and a size of a foreign matter attached to a front side or a back side of the substrate to be inspected based on an image captured by the S-polarized image capturing unit and the P-polarized image capturing unit; The foreign matter inspection unit is provided with a foreign matter attachment surface determination unit that compares the result obtained by the S-polarization imaging unit and the result of the inspection, and the result of the inspection by the P-polarization imaging unit. Based on the magnitude relationship of the scattered light intensity at the same position on the substrate to be inspected, it is determined which of the front side or the back side of the substrate to be inspected is attached to the object to be inspected.

根據該構成,針對成為檢查對象之基板之正面側及其背面側,一次性拍攝分離成S偏光狀態及P偏光狀態之光,關於自基板發出散射光之各部位,可判定為若S偏光成分較強則於正面側存在異物,若P偏光成分較強則於背面側存在異物。再者,該判定係依據折射率不同之物質(即基板材料及其周圍之環境)之界面之物理現象,即便基板之厚度變薄亦可應用。 According to this configuration, light that is separated into the S-polarized state and the P-polarized state is imaged once on the front side and the back side of the substrate to be inspected, and the S-polarized component can be determined as the portion of the scattered light emitted from the substrate. If it is strong, foreign matter is present on the front side, and if the P-polarized component is strong, foreign matter is present on the back side. Furthermore, this determination is based on the physical phenomenon of the interface between substances having different refractive indices (ie, the substrate material and the environment around them), and can be applied even if the thickness of the substrate is thin.

又,根據上述構成,針對一次性拍攝之位於同一位置之異物,判定異物附著於基板之正面側或其背面側之哪一者,因此可防止錯誤計數或雙重計數等錯誤檢測。亦即,只要針對同一檢查對象部位進行一次性拍攝即可,故而能夠進行迅速之檢查。 Further, according to the configuration described above, it is possible to determine which of the foreign matter at the same position that is photographed at one time is attached to the front side or the back side of the substrate, so that erroneous detection such as erroneous counting or double counting can be prevented. In other words, it is only necessary to perform one-time imaging for the same inspection target portion, so that a quick inspection can be performed.

即便檢查對象基板變薄,亦能夠正背分離地高精度且迅速地檢查基板之正面側及其背面側。 Even if the inspection target substrate is thinned, the front side and the back side of the substrate can be inspected with high precision and speed with respect to the front and back separation.

1‧‧‧基板檢查裝置 1‧‧‧Substrate inspection device

1z‧‧‧先前之基板檢查裝置 1z‧‧‧Previous substrate inspection device

2‧‧‧基板保持部 2‧‧‧Substrate retention department

3‧‧‧照明部 3‧‧‧Lighting Department

3B‧‧‧照明部 3B‧‧‧Lighting Department

3z‧‧‧照明部 3z‧‧‧Lighting Department

4‧‧‧攝像部 4‧‧‧Photography Department

4p‧‧‧P偏光攝像部 4p‧‧‧P Polarized Camera

4s‧‧‧S偏光攝像部 4s‧‧‧S polarized camera

4z‧‧‧攝像部 4z‧‧·Photography Department

5‧‧‧分離偏光部 5‧‧‧ Separation of polarized parts

5B‧‧‧分離偏光部 5B‧‧‧ Separation of polarized parts

7‧‧‧異物檢查部 7‧‧‧ Foreign Body Inspection Department

8‧‧‧相對移動部 8‧‧‧ Relative Mobile Department

11‧‧‧裝置框架 11‧‧‧ device framework

11z‧‧‧裝置框架 11z‧‧‧ device framework

15‧‧‧連結構件 15‧‧‧Connected components

15z‧‧‧連結構件 15z‧‧‧Connected components

20‧‧‧基板載置台 20‧‧‧Substrate mounting table

21‧‧‧定位基準銷 21‧‧‧ Positioning reference pin

31‧‧‧照明單元 31‧‧‧Lighting unit

32‧‧‧照明光 32‧‧‧Lights

32z‧‧‧照明光 32z‧‧‧Lights

33‧‧‧箭頭(光之前進方向) 33‧‧‧Arrows (light forward)

35‧‧‧反射鏡 35‧‧‧Mirror

36‧‧‧照明光(藉由反射鏡反射之光) 36‧‧‧ illumination light (light reflected by mirror)

42p‧‧‧攝像相機(P偏光檢查用) 42p‧‧‧ camera (for P-polarization inspection)

42s‧‧‧攝像相機(S偏光檢查用) 42s‧‧‧ Camera Camera (for S-polarization inspection)

42z‧‧‧攝像相機 42z‧‧‧ camera camera

43‧‧‧透鏡 43‧‧‧ lens

43p‧‧‧透鏡(P偏光檢查用) 43p‧‧‧Lens (for P-polarization inspection)

43s‧‧‧透鏡(S偏光檢查用) 43s‧‧‧Lens (for S-polarization inspection)

43z‧‧‧透鏡 43z‧‧ lens

44‧‧‧連接 44‧‧‧Connect

50‧‧‧偏振分光鏡 50‧‧‧Polarizing beam splitter

50B‧‧‧半反射鏡 50B‧‧·half mirror

51a‧‧‧來自異物X1之散射光 51a‧‧‧Scattered light from foreign object X1

51b‧‧‧入射之光之一部分 51b‧‧‧ part of the incident light

51c‧‧‧入射之光之一部分 51c‧‧‧ part of the incident light

51p‧‧‧經P偏光之來自異物X1之散射光 51p‧‧‧scattered light from foreign matter X1 by P-polarized light

51p'、52p'‧‧‧通過P偏光濾光器之光 51p', 52p'‧‧‧Light through P-polarized filter

51s‧‧‧經S偏光之來自異物X1之散射光 51s‧‧‧Scattered light from foreign matter X1 by S-polarization

51s'、52s'‧‧‧通過S偏光濾光器之光 51s', 52s' ‧ ‧ light through S polarizing filter

52a‧‧‧來自異物X2之散射光 52a‧‧‧Scattered light from foreign body X2

52b‧‧‧入射之光之一部分 52b‧‧‧ part of the incident light

52c‧‧‧入射之光之一部分 52c‧‧‧ part of the incident light

52p‧‧‧經P偏光之來自異物X2之散射光 52p‧‧‧scattered light from foreign matter X2 via P-polarized light

52s‧‧‧經S偏光之來自異物X2之散射光 52s‧‧‧Scattered light from foreign matter X2 by S-polarization

54p‧‧‧P偏光濾光器 54p‧‧‧P polarizing filter

54s‧‧‧S偏光濾光器 54s‧‧‧S polarizing filter

61‧‧‧X軸平台 61‧‧‧X-axis platform

62‧‧‧Y軸平台 62‧‧‧Y-axis platform

81‧‧‧X軸平台 81‧‧‧X-axis platform

82‧‧‧Y軸平台 82‧‧‧Y-axis platform

H1‧‧‧法線 H1‧‧‧ normal

R‧‧‧檢查對象區域 R‧‧‧ inspection area

R1‧‧‧檢查對象區域(第1主面側) R1‧‧‧ inspection area (1st main side)

R2‧‧‧檢查對象區域(第2主面側) R2‧‧‧ inspection area (2nd main side)

Rz‧‧‧檢查對象區域 Rz‧‧‧ inspection area

S1‧‧‧基板之第1主面(基板之正面) The first main surface of the S1‧‧‧ substrate (front side of the substrate)

S2‧‧‧基板之第2主面(基板之背面) S2‧‧‧2nd main surface of the substrate (back side of the substrate)

t‧‧‧厚度 T‧‧‧thickness

tz‧‧‧厚度 Tz‧‧‧ thickness

W‧‧‧基板 W‧‧‧Substrate

Wz‧‧‧基板 Wz‧‧‧ substrate

X1‧‧‧異物 X1‧‧‧ Foreign objects

X2‧‧‧異物 X2‧‧‧ Foreign objects

X3‧‧‧異物 X3‧‧‧ Foreign objects

X4‧‧‧異物 X4‧‧‧ Foreign objects

X‧‧‧X軸 X‧‧‧X axis

Y‧‧‧Y軸 Y‧‧‧Y axis

Z‧‧‧Z軸 Z‧‧‧Z axis

θ1‧‧‧特定之角度(經偏光之照明光之角度) θ1‧‧‧Specific angle (angle of polarized illumination)

θ2‧‧‧特定之角度(攝像相機之角度) Θ2‧‧‧specific angle (angle of camera)

圖1係表示實現本發明之形態之一例之立體圖。 Fig. 1 is a perspective view showing an example of a form for realizing the present invention.

圖2係複合地表示實現本發明之形態之一例之主要部分及拍攝到 之散射光強度之圖。 Figure 2 is a composite view showing the main part of an embodiment of the present invention and photographing A plot of the intensity of the scattered light.

圖3(a)、(b)係對來自附著於基板之正面及背面之異物之散射光強度進行比較之相關圖。 3(a) and 3(b) are correlation diagrams for comparing scattered light intensities from foreign matter attached to the front and back surfaces of the substrate.

圖4係按時間序列表示實現本發明之形態之一例之檢查處理之流程圖。 Fig. 4 is a flow chart showing the inspection process for realizing an embodiment of the present invention in time series.

圖5係表示實現本發明之形態之一例中設為檢查對象之基板之一例之俯視圖。 Fig. 5 is a plan view showing an example of a substrate to be inspected in an example of the embodiment of the present invention.

圖6(a)~(d)係表示實現本發明之形態之一例中檢查所得之各結果之一例之概念圖。 Fig. 6 (a) to (d) are conceptual views showing an example of the results obtained by inspection in an example of the embodiment of the present invention.

圖7係表示實現本發明之形態之另一例之立體圖。 Fig. 7 is a perspective view showing another example of the embodiment of the present invention.

圖8係複合地表示實現本發明之形態之另一例之主要部分及拍攝到之散射光強度之圖。 Fig. 8 is a view showing, in combination, a main part of another example for realizing the embodiment of the present invention and a captured scattered light intensity.

圖9係表示實現本發明之形態之又一例之主要部分之前視圖。 Fig. 9 is a front elevational view showing the main part of still another example of the embodiment of the present invention.

圖10係表示先前之基板檢查裝置之一例之外觀圖。 Fig. 10 is a perspective view showing an example of a conventional substrate inspection apparatus.

圖11(a)、(b)係表示使用先前之基板檢查裝置檢查基板之正面及背面之情況之概念圖。 11(a) and 11(b) are conceptual views showing a state in which the front and back sides of the substrate are inspected using the previous substrate inspection device.

一面使用圖,一面對用以實施本發明之形態進行說明。 The drawings will be described with reference to the drawings for carrying out the invention.

圖1係表示實現本發明之形態之一例之外觀圖。 Fig. 1 is an external view showing an example of a form for realizing the present invention.

於圖1中,針對基於拍攝基板所得之圖像而進行光學性檢查之基板檢查裝置1,複合地記載有各構成機器之立體圖、及獲取圖像並進行檢查所必需之構成之方塊圖。再者,於各圖中,將正交座標系統之3軸設為X、Y、Z,將XY平面設為水平面,將Z方向設為鉛垂方向。特別是,於Z方向上將箭頭之方向設為上,將其相反方向表現為下。又,成為檢查對象之基板W具有第1主面S1、及與該第1主面S1處於正面及背面之關係之第2主面S2。再者,於本案中,將該第1主面S1側稱 為第1主面側或正面側,將與其處於正面及背面之關係之第2主面S2側稱為第2主面側或背面側。又,將設定於基板W之檢查對象區域R中之第1主面側稱為第1主面側檢查對象區域R1,將第2主面側稱為第2主面側檢查對象區域R2。再者,設定於基板W之檢查對象區域R係針對基板之尺寸或品種而分別設定,可設定基板上之特定之區域或除外周部以外之基板整個面。 In FIG. 1, a substrate inspection apparatus 1 that performs optical inspection based on an image obtained by photographing a substrate is collectively described with a perspective view of each constituent device and a configuration necessary for acquiring an image and performing inspection. In addition, in each figure, the three axes of the orthogonal coordinate system are set to X, Y, and Z, the XY plane is set to a horizontal plane, and the Z direction is set to a vertical direction. In particular, the direction of the arrow is set to the upper direction in the Z direction, and the opposite direction is expressed as the lower side. Moreover, the substrate W to be inspected has the first main surface S1 and the second main surface S2 which is in front and back relationship with the first main surface S1. Furthermore, in the present case, the first main surface S1 side is called The first main surface side or the front side is referred to as a second main surface side or a back side in the relationship between the front surface and the back surface. In addition, the first main surface side which is set in the inspection target region R of the substrate W is referred to as a first main surface side inspection target region R1, and the second main surface side is referred to as a second main surface side inspection target region R2. In addition, the inspection target region R set on the substrate W is set for each size or type of the substrate, and a specific region on the substrate or the entire surface of the substrate other than the peripheral portion can be set.

實現本發明之形態之一例之基板檢查裝置1構成為具備基板保持部2、照明部3、分離偏光部5、S偏光攝像部4s、P偏光攝像部4p、及異物檢查部7。該基板檢查裝置1係朝向設定於基板W之檢查對象區域R照射照明光,並將來自位於該檢查對象區域R內之異物之散射光分離成S偏光狀態及P偏光狀態之光,分別針對S偏光狀態及P偏光狀態之光個別地獲取攝像圖像,藉由異物檢查部7提取異物。進而,於異物檢查部7中,針對該等提取之異物,比較拍攝S偏光狀態之光時之散射光強度、與拍攝P偏光狀態之光時之散射光強度,根據其大小關係判定異物位於基板W之第1主面S1側(即正面側)或位於第2主面S2側(即背面側)。再者,基板檢查裝置1視需要亦可設為具備相對移動部8之構成。 The substrate inspection device 1 that realizes an embodiment of the present invention includes a substrate holding unit 2, an illumination unit 3, a separation polarizing unit 5, an S polarization imaging unit 4s, a P-polarized imaging unit 4p, and a foreign object inspection unit 7. The substrate inspection apparatus 1 irradiates the illumination light toward the inspection target region R set to the substrate W, and separates the scattered light from the foreign matter located in the inspection target region R into the S-polarized state and the P-polarized state, respectively. The light in the polarized state and the P-polarized state individually acquires a captured image, and the foreign matter inspecting unit 7 extracts the foreign matter. Further, in the foreign matter inspection unit 7, the intensity of the scattered light when the light in the S-polarized state is captured and the intensity of the scattered light when the light in the P-polarized state is captured are compared with respect to the extracted foreign matter, and the foreign matter is determined to be located on the substrate according to the magnitude relationship. W is on the first main surface S1 side (that is, on the front side) or on the second main surface S2 side (that is, on the back side). Further, the substrate inspection apparatus 1 may be configured to include the relative movement unit 8 as needed.

基板保持部2保持成為檢查對象之基板W。 The substrate holding portion 2 holds the substrate W to be inspected.

具體而言,基板保持部2可藉由基板載置台20構成。基板載置台20之較基板W之外形尺寸稍微靠內側且較基板W之成為檢查對象區域之部分更靠外側呈空腔或凹陷之剖面形狀。又,基板載置台20係於較基板W之外形尺寸稍微靠外側具備定位用基準銷21。 Specifically, the substrate holding portion 2 can be configured by the substrate placing table 20 . The substrate mounting table 20 has a shape slightly smaller than the outer surface of the substrate W and has a cavity or a recessed cross-sectional shape outside the portion of the substrate W which is the inspection target region. Moreover, the substrate mounting table 20 is provided with the positioning reference pin 21 on the outer side slightly outside the substrate W.

照明部3係朝向設定於基板W上之檢查對象區域R照射照明光32。具體而言,照明部3可例示氙氣燈或鹵素燈、金屬鹵化物燈等燈光源,或者使用半導體雷射或LED(Light Emitting Diode,發光二極體)等者,且經由透鏡或反射鏡等而朝向檢查對象區域照射照明光。 The illumination unit 3 illuminates the illumination light 32 toward the inspection target region R set on the substrate W. Specifically, the illuminating unit 3 can be exemplified by a lamp light source such as a xenon lamp, a halogen lamp, or a metal halide lamp, or a semiconductor laser or an LED (Light Emitting Diode), and the like, and a lens, a mirror, or the like. The illumination light is illuminated toward the inspection target area.

於此,例示使用氙氣燈作為照明部3之構成進行說明。又,例示如下形態:自照明部3朝向檢查對象區域R照射細長之帶狀(所謂之片狀)之照明光,且於下述之攝像部5之攝像相機中,具備線型感測器作為攝像元件。 Here, a configuration in which a xenon lamp is used as the illumination unit 3 will be described. Further, an illuminating light is irradiated from the illuminating unit 3 toward the inspection target region R in an elongated strip shape (so-called sheet shape), and a line sensor is provided as an imaging camera in the imaging unit 5 described below. element.

於照明部3中,具備光源部、導光纖維部、及照明單元31。 The illumination unit 3 includes a light source unit, a light guiding fiber unit, and an illumination unit 31.

於光源部(未圖示)具備氙氣燈、使該氙氣燈發光之電源、及高效率地反射所發出之光之橢圓反射鏡。導光纖維部具備將自光源部放出之光向外部導光之光纖之束。照明單元31於內部具備柱面透鏡,可將經導光之光作為片狀光而朝向檢查對象區域R照射。 The light source unit (not shown) includes a xenon lamp, a power source for causing the xenon lamp to emit light, and an elliptical mirror for efficiently reflecting the emitted light. The light guiding fiber portion is provided with a bundle of optical fibers that guide light emitted from the light source portion to the outside. The illumination unit 31 is provided with a cylindrical lens inside, and can irradiate the guided light to the inspection target region R as sheet light.

分離偏光部5將散射光分離成S偏光狀態之光及P偏光狀態之光。具體而言,於偏光部5中,具備被稱為偏振分光鏡50之光學元件。偏振分光鏡50可例示組合施加有多層膜塗層之稜鏡等光學元件而構成,且使入射光中之P偏光成分之光直行通過,並且使S偏光成分之光反射(即將光路彎折90度)而通過者。 The separation polarizing unit 5 separates the scattered light into light in a S-polarized state and light in a P-polarized state. Specifically, the polarizing unit 5 includes an optical element called a polarization beam splitter 50. The polarization beam splitter 50 can be configured by combining an optical element such as a crucible to which a multilayer film coating is applied, and passing the light of the P-polarized component in the incident light straight, and reflecting the light of the S-polarized component (ie, bending the optical path 90) Degree) and pass.

圖2係複合地表示實現本發明之形態之一例之主要部分及拍攝到之散射光強度之圖。圖2係概念性地表示使用實現本發明之基板檢查裝置,檢查較先前更薄之基板之正面及背面之情況,且複合地圖示對成為檢查對象之基板W照射照明光並拍攝於附著於基板W之異物X1、X2漫反射之散射光之情況、及藉由攝像部拍攝到之來自異物X1、X2之散射光之強度。 Fig. 2 is a view showing, in combination, a main part of an embodiment of the present invention and a captured scattered light intensity. 2 is a conceptual view showing a case where a substrate inspection apparatus embodying the present invention is used to inspect a front surface and a back surface of a substrate which is thinner than before, and a substrate W to be inspected is collectively illuminated to emit illumination light and imaged and attached thereto. The scattered light of the foreign matter X1 and X2 of the substrate W is diffusely reflected, and the intensity of the scattered light from the foreign matter X1 and X2 captured by the imaging unit.

照明單元31係以使照射之用於檢查之照明光32相對於基板W之第1主面S1之法線H1呈特定之角度θ1且沿箭頭33之方向照射照明光32之方式配置。亦即,對基板W之第1主面S1,自斜上方照射照明光32。而且,照明光32分別於附著於基板W之第1主面側之異物X1之表面、及附著於基板W之第2主面側之異物X2之表面(即基板W之第2主面側)漫反射,其等之散射光藉由分離偏光部5而被分離成S偏光狀態及P偏 光狀態,且被S偏光攝像部4s及P偏光攝像部4p拍攝。 The illumination unit 31 is disposed such that the illumination light 32 for inspection is irradiated with the illumination light 32 at a specific angle θ1 with respect to the normal line H1 of the first principal surface S1 of the substrate W and in the direction of the arrow 33. That is, the illumination light 32 is irradiated obliquely upward from the first main surface S1 of the substrate W. Further, the illumination light 32 is respectively attached to the surface of the foreign matter X1 on the first main surface side of the substrate W and the surface of the foreign matter X2 adhering to the second main surface side of the substrate W (that is, the second main surface side of the substrate W). Diffuse reflection, such as scattered light is separated into S-polarized state and P-polarized by separating the polarizing section 5 The light state is captured by the S polarized light imaging unit 4s and the P polarized light imaging unit 4p.

因此,偏振分光鏡50可將自附著於檢查對象區域R之異物X1、X2放出之散射光51a、52a分別分離成設為S偏光狀態之光51s、52s、及設為P偏光狀態之光51p、52p。再者,所謂S偏光係指一面沿水平方向(即X方向)振盪一面前進之光。另一方面,所謂P偏光係指一面沿與水平方向(即X方向)及光前進之方向正交之方向振盪一面前進之光。又,此處所謂之S偏光狀態理想為不限於完全地成為僅S偏光成分之光之狀態,而係指包含少許P偏光成分之光並且以S偏光成分之光為主成分之狀態。同樣地,此處所謂之P偏光狀態理想為不限於完全地成為僅P偏光成分之光之狀態,而係指包含少許S偏光成分之光並且以P偏光成分之光為主成分之狀態。 Therefore, the polarization beam splitter 50 can separate the scattered light 51a and 52a emitted from the foreign matter X1 and X2 attached to the inspection target region R into the light 51s and 52s which are in the S-polarized state, and the light 51p which is in the P-polarized state. , 52p. In addition, the S-polarized light refers to light that travels while oscillating in the horizontal direction (ie, the X direction). On the other hand, the P-polarized light refers to light that travels while oscillating in a direction orthogonal to the horizontal direction (ie, the X direction) and the direction in which the light advances. In addition, the S-polarized state is not limited to a state in which light of only the S-polarized component is completely limited, and is a state in which light containing a small amount of P-polarized component is used and light of the S-polarized component is mainly composed. In the same manner, the P-polarized state is not limited to the state of completely forming only the light of the P-polarized component, but is a state in which the light of the S-polarized component is included and the light of the P-polarized component is the main component.

再者,通過偏振分光鏡之P偏光狀態之光與S偏光狀態之光之比率可藉由多層膜塗層之材質或膜厚等而適當設定,於此表示以1:1進行分離之例(參照圖1)。 Further, the ratio of the light in the P-polarized state to the light in the S-polarized state by the polarization beam splitter can be appropriately set by the material or film thickness of the multilayer film coating, and the example of separation by 1:1 is shown here ( Refer to Figure 1).

S偏光攝像部4s係拍攝自檢查對象區域發出之散射光中之藉由分離偏光部5分離散射光並設為S偏光狀態之光。P偏光攝像部4p係拍攝自檢查對象區域發出之散射光中之藉由分離偏光部5分離散射光並設為P偏光狀態之光。具體而言,S偏光攝像部4s及P偏光攝像部4p係自第1主面S1側拍攝設定於基板W之第1主面S1側之第1主面側檢查對象區域R1或設定於基板W之第2主面S2側之第2主面側檢查對象區域R2。而且,分離偏光部5及P偏光攝像部4p係以相對於基板W之第1主面S1呈特定之角度θ2而拍攝第1主面側檢查對象區域R1之方式配置,S偏光攝像部4s係以藉由分離偏光部5將光路彎折90度而拍攝第1主面側檢查對象區域R1之方式配置。亦即,S偏光攝像部4s及P偏光攝像部4p係設為對基板W之第1主面S1自斜上方拍攝檢查對象區域R之構成。 The S-polarized image capturing unit 4s is a light that is separated from the scattered light by the separation polarizing unit 5 and is set to the S-polarized state among the scattered light emitted from the inspection target region. The P-polarized light-receiving unit 4p is a light that is separated from the scattered light by the separation polarizing unit 5 and is set to a P-polarized state among the scattered light emitted from the inspection target region. Specifically, the S-polarized image capturing unit 4s and the P-polarized light-receiving unit 4p are imaged on the first main surface side inspection target region R1 set on the first main surface S1 side of the substrate W from the first main surface S1 side or set on the substrate W. The second main surface side inspection target region R2 on the second main surface S2 side. Further, the separation polarizing unit 5 and the P-polarized imaging unit 4p are arranged such that the first main surface side inspection target region R1 is imaged at a specific angle θ2 with respect to the first main surface S1 of the substrate W, and the S-polarized imaging unit 4s is configured. The first main surface side inspection target region R1 is placed by bending the optical path by 90 degrees and separating the polarizing portion 5 . In other words, the S-polarized image capturing unit 4s and the P-polarized light-receiving unit 4p are configured to image the inspection target region R from the obliquely upper side of the first main surface S1 of the substrate W.

更具體而言,S偏光攝像部4s具備攝像相機42s、及透鏡43s。另一方面,P偏光攝像部4p具備攝像相機42p、及透鏡43p。攝像相機42s、42p係將與藉由攝像元件受光之像對應之影像信號或圖像資料向外部輸出者,作為該攝像元件,可例示使用CCD(Charge Coupled Device,電荷耦合元件)、CMOS(Complementary Metal Oxide Semiconductor,互補金屬氧化物半導體)之線型感測器。透鏡43s、43p係將來自附著於基板W之異物之散射光聚集於攝像相機42s、42p之攝像元件使其成像者。 More specifically, the S-polarized image capturing unit 4s includes an imaging camera 42s and a lens 43s. On the other hand, the P-polarized light imaging unit 4p includes an imaging camera 42p and a lens 43p. The image pickup camera 42s and 42p output an image signal or image data corresponding to the image received by the image pickup device to the outside. As the image pickup device, a CCD (Charge Coupled Device) or a CMOS (Complementary) can be exemplified. Metal Oxide Semiconductor, a complementary metal oxide semiconductor linear sense sensor. The lenses 43s and 43p collect the scattered light from the foreign matter attached to the substrate W on the imaging elements of the imaging cameras 42s and 42p to form an image.

再者,攝像相機42s、42p之攝像元件不限於線型感測器,亦可為TDI(Transport Driver Interface,傳輸驅動程式介面)感測器。或者,攝像相機42s、42p之攝像元件亦可採用面型感測器。 Furthermore, the imaging elements of the camera cameras 42s and 42p are not limited to the line type sensor, and may be a TDI (Transport Driver Interface) sensor. Alternatively, the imaging elements of the camera cameras 42s and 42p may also employ a surface sensor.

S偏光攝像部4s及P偏光攝像部4p係設為如下構成:具備透鏡43s、43p之景深為基板W之厚度t以上者,且於與基板W之距離被固定之狀態下經由連結構件15而安裝於裝置框架11。此時,S偏光攝像部4s及P偏光攝像部4p設為於基板W之第1主面S1及基板W之第2主面S2兩者焦點重合之狀態。 The S-polarized image capturing unit 4s and the P-polarized light-receiving unit 4p are configured such that the depth of field of the lenses 43s and 43p is equal to or greater than the thickness t of the substrate W, and the distance from the substrate W is fixed via the connecting member 15 in a state where the distance from the substrate W is fixed. Mounted to the device frame 11. At this time, the S-polarized image capturing unit 4s and the P-polarized light-receiving unit 4p are in a state in which the first main surface S1 of the substrate W and the second main surface S2 of the substrate W are in focus.

圖3係對來自附著於基板之正面及背面之異物之散射光強度進行比較之相關圖。於圖3(a)中,分別表示使作為異物之粒徑不同之標準粒子僅附著於基板W之第1主面S1側,且以用於檢查之照明光之S偏光成分及P偏光成分之強度分別成為相同之方式進行照射,並藉由S偏光攝像部4s及P偏光攝像部4p拍攝時之散射光強度。另一方面,於圖3(b)中,分別表示使作為異物之粒徑不同之標準粒子僅附著於基板W之背面S2側,且以用於檢查之照明光之S偏光成分及P偏光成分之強度分別成為相同之方式進行照射,並藉由S偏光攝像部4s及P偏光攝像部4p拍攝時之散射光強度。 Fig. 3 is a correlation diagram comparing the intensity of scattered light from foreign matter attached to the front and back surfaces of the substrate. In FIG. 3( a ), the standard particles having different particle diameters as foreign substances are attached only to the first main surface S1 side of the substrate W, and the S-polarized component and the P-polarized component of the illumination light for inspection are used. The intensity of the scattered light when the intensity is the same as that of the S-polarized imaging unit 4s and the P-polarized imaging unit 4p. On the other hand, in FIG. 3(b), the standard particles having different particle diameters as foreign substances are attached only to the side of the back surface S2 of the substrate W, and the S-polarized component and the P-polarized component of the illumination light for inspection are respectively shown. The intensity of the scattered light is the same as that of the S-polarized imaging unit 4s and the P-polarized imaging unit 4p.

此時,以相對於基板W之第1主面S1之法線H1,自照明部3朝向 檢查對象區域R照射之光32之角度θ1成為80度±5度以內,且藉由攝像相機42拍攝之角度θ2成為45度±5度以內之方式,配置有照明部3、分離偏光部5、S偏光攝像部4s及P偏光攝像部4p之各機器。 At this time, the light is directed from the illumination unit 3 with respect to the normal line H1 of the first main surface S1 of the substrate W. The angle θ1 of the light 32 to be irradiated by the inspection target region R is within 80 degrees ± 5 degrees, and the illumination unit 3 and the separation polarization unit 5 are disposed such that the angle θ2 captured by the imaging camera 42 is within 45 degrees ± 5 degrees. Each of the S polarized light imaging unit 4s and the P polarized light imaging unit 4p.

若觀察圖3(a)(b),則可知即便粒徑不同,只要異物附著於基板W之正面S1側,則S偏光狀態下之散射光強度較P偏光狀態下之散射光強度更強。另一方面,可知即便粒徑不同,只要異物附著於基板W之背面S2側,則P偏光狀態下之散射光強度較S偏光狀態下之散射光強度更強。 3(a) and (b), it is understood that the scattered light intensity in the S-polarized state is stronger than the scattered light intensity in the P-polarized state as long as the foreign matter adheres to the front surface S1 side of the substrate W even if the particle diameter is different. On the other hand, it is understood that the scattered light intensity in the P-polarized state is stronger than the scattered light intensity in the S-polarized state as long as the foreign matter adheres to the back surface S2 side of the substrate W even if the particle diameter is different.

因此,如圖2所示,來自附著於基板W之第1主面之異物X1之散射光51a係S偏光成分之強度較強,P偏光成分之強度較弱。因此,藉由偏振分光鏡50分離之S偏光狀態之光51s之強度較分離之P偏光狀態之光51p之強度更強。另一方面,來自附著於基板W之第2主面之異物X2之散射光52a係P偏光成分之強度較強,S偏光成分之強度較弱。因此,藉由偏振分光鏡50分離之P偏光狀態之光52p之強度較分離之S偏光狀態之光52s之強度更強。 Therefore, as shown in FIG. 2, the scattered light 51a from the foreign matter X1 attached to the first principal surface of the substrate W is strong in the S-polarized component, and the intensity of the P-polarized component is weak. Therefore, the intensity of the S-polarized light 51s separated by the polarization beam splitter 50 is stronger than the intensity of the separated P-polarized light 51p. On the other hand, the scattered light 52a from the foreign matter X2 attached to the second principal surface of the substrate W is strong in the intensity of the P-polarized component, and the intensity of the S-polarized component is weak. Therefore, the intensity of the light 52p in the P-polarized state separated by the polarization beam splitter 50 is stronger than the intensity of the light 52s in the S-polarized state in which the separation is performed.

再者,此種特性係依據折射率不同之物質(即基板材料及其周圍之環境)之界面之物理現象,即便基板W之厚度變薄亦成立。 Furthermore, such characteristics are based on physical phenomena at the interface of substances having different refractive indices (i.e., the substrate material and the environment around them), even if the thickness of the substrate W is thin.

異物檢查部7係基於藉由S偏光攝像部4s及P偏光攝像部4p拍攝到之圖像而檢查附著於基板W之第1主面S1側(即正面側)及第2主面S2側(即背面側)之異物之位置及大小。進而,異物檢查部7之詳細情況於下文敍述,其分別判定檢測出之異物位於基板W之第1主面S1側(即正面側)或位於第2主面S2側(即背面側)。 The foreign object inspection unit 7 checks the first main surface S1 side (ie, the front side) and the second main surface S2 side of the substrate W based on the images captured by the S polarized light imaging unit 4s and the P polarized light imaging unit 4p ( That is, the position and size of the foreign matter on the back side. Further, the details of the foreign matter inspection unit 7 are described below, and it is determined that the detected foreign matter is located on the first main surface S1 side (ie, the front side) of the substrate W or on the second main surface S2 side (that is, the back side).

於異物檢查部7中,具備S偏光圖像檢查部、P偏光圖像檢查部、檢查結果比較部及異物附著面判定部。 The foreign matter inspection unit 7 includes an S-polarized image inspection unit, a P-polarized image inspection unit, an inspection result comparison unit, and a foreign matter attachment surface determination unit.

S偏光圖像檢查部係基於拍攝已通過分離偏光部5之S偏光狀態之光所得之圖像(即自攝像相機42s輸出之圖像),進行異物之檢測。 The S-polarized image inspection unit detects foreign matter based on an image obtained by separating the light of the S-polarized state of the polarizing unit 5 (that is, an image output from the imaging camera 42s).

P偏光圖像檢查部係基於拍攝已通過分離偏光部5之P偏光狀態之光所得之圖像(即自攝像相機42p輸出之圖像),進行異物之檢測。 The P-polarized image inspection unit detects the foreign matter based on the image obtained by the light of the P-polarized state in which the polarizing unit 5 is separated (that is, the image output from the imaging camera 42p).

進而,S偏光圖像檢查部及P偏光圖像檢查部視需要進行求出所檢測出之異物之位置或大小之運算處理等,並作為檢查結果輸出。 Further, the S-polarized image inspection unit and the P-polarized image inspection unit perform calculation processing for obtaining the position or size of the detected foreign matter as needed, and output the result as an inspection result.

檢查結果比較部係對S偏光圖像檢查部及P偏光圖像檢查部之檢查結果進行比較。 The inspection result comparison unit compares the inspection results of the S-polarized image inspection unit and the P-polarized image inspection unit.

異物附著面判定部判定異物附著於該成為檢查對象之基板之正側或背面側之哪一者。具體而言,異物附著面判定部係針對成為檢查對象之基板上之同一位置之散射光強度,藉由檢查結果比較部進行比較所得之結果 The foreign matter adhering surface determining unit determines which of the positive side or the back side of the substrate to be inspected is attached to the foreign object. Specifically, the foreign matter adhering surface determining unit compares the intensity of the scattered light at the same position on the substrate to be inspected by the inspection result comparing unit.

若為S偏光狀態下之散射光強度>P偏光狀態下之散射光強度,則判定為異物附著於該成為檢查對象之基板之正面側, If the intensity of the scattered light in the S-polarized state is > the intensity of the scattered light in the P-polarized state, it is determined that the foreign matter adheres to the front side of the substrate to be inspected.

若為P偏光狀態下之散射光強度>S偏光狀態下之散射光強度,則判定為異物附著於該成為檢查對象之基板之背面側。 When the intensity of the scattered light in the P-polarized state is the intensity of the scattered light in the S-polarized state, it is determined that the foreign matter adheres to the back side of the substrate to be inspected.

更具體而言,異物檢查部7以及S偏光圖像檢查部、P偏光圖像檢查部、檢查結果比較部及異物附著面判定部可藉由所謂之圖像處理裝置(硬體)、及圖像處理程式(軟體)構成。而且,自攝像相機42s、42p輸出之影像信號或圖像資料被輸入至圖像處理裝置後,藉由異物檢查部7之S偏光圖像檢查部、P偏光圖像檢查部、檢查結果比較部及異物附著面判定部,一面進行特定之圖像處理,一面基於預先設定之檢查基準進行檢查。 More specifically, the foreign matter inspection unit 7 and the S-polarized image inspection unit, the P-polarized image inspection unit, the inspection result comparison unit, and the foreign matter attachment surface determination unit can be represented by a so-called image processing device (hardware) and Like a processing program (software). Further, after the video signal or the image data output from the imaging cameras 42s and 42p is input to the image processing apparatus, the S-polarized image inspection unit, the P-polarized image inspection unit, and the inspection result comparison unit of the foreign object inspection unit 7 are used. The foreign matter attachment surface determination unit performs inspection based on a predetermined inspection standard while performing specific image processing.

作為異物檢查部7之S偏光圖像檢查部及P偏光圖像檢查部之具體之圖像處理,可例示如下形態:檢測圖像所包含之亮點,根據各個亮點之亮度資訊或佔有像素數等判定作為異物之粒徑,一面與攝像視野內之座標資訊建立聯繫一面進行標記處理,而對在基板上存在幾個何種大小之粒徑之異物進行檢查(所謂之異物檢測檢查)。再者,將藉由 S偏光圖像檢查部之檢查結果稱為S偏光檢查結果,將藉由P偏光圖像檢查部之檢查結果稱為P偏光檢查結果。 Specific image processing of the S-polarized image inspection unit and the P-polarized image inspection unit of the foreign matter inspection unit 7 may be exemplified by detecting bright spots included in the image, and according to brightness information of each bright spot or the number of occupied pixels. When it is determined that the particle diameter of the foreign matter is associated with the coordinate information in the imaging field of view, the labeling process is performed, and the foreign matter having a particle size of several sizes on the substrate is inspected (so-called foreign matter detection inspection). Furthermore, it will be The inspection result of the S-polarized image inspection unit is referred to as the S-polarization inspection result, and the inspection result by the P-polarized image inspection unit is referred to as a P-polarization inspection result.

藉由異物檢查部7之檢查結果比較部,針對S偏光檢查結果及P偏光檢查結果,讀取於基板上之同一座標上被標記處理之異物,並針對各者,比較S偏光檢查結果及P偏光檢查結果之哪一者之散射光強度較強。 By the inspection result comparison unit of the foreign matter inspection unit 7, the foreign matter marked and processed on the same coordinate on the substrate is read for the S-polarization inspection result and the P-polarization inspection result, and the S-polarization inspection result and P are compared for each. Which of the polarized light inspection results has a strong scattered light intensity.

藉由異物檢查部7之異物附著面判定部,將散射光強度較強者作為異物進行處理,並判定該異物附著於基板W之第1主面S1側或第2主面S2側之哪一者上。然後,藉由異物檢查部7,自與該異物之大小對應之散射光強度換算成該異物粒徑,並作為異物檢查之結果而輸出。再者,作為S偏光檢查結果及P偏光檢查結果,於為將散射光強度換算成粒徑並作為檢查結果而輸出之形態之情形時,比較哪一者之粒徑較大。 The foreign matter adhering surface determining unit of the foreign matter detecting unit 7 processes the strong scattered light intensity as a foreign matter, and determines which of the first main surface S1 side or the second main surface S2 side of the substrate W is attached to the substrate W. on. Then, the foreign matter inspection unit 7 converts the intensity of the scattered light corresponding to the size of the foreign matter into the foreign matter particle diameter, and outputs it as a result of the foreign matter inspection. In addition, as a result of the S-polarization inspection result and the P-polarization inspection result, when the intensity of the scattered light is converted into a particle diameter and output as a result of the inspection, it is comparatively larger which particle diameter is larger.

[藉由異物檢查部之處理流程] [Processing by the Foreign Body Inspection Department]

圖4係按時間序列表示實現本發明之形態之一例之檢查處理之流程圖,且表示本發明之異物檢查部之檢查處理之一例。 Fig. 4 is a flowchart showing an inspection process for realizing an example of the present invention in time series, and shows an example of inspection processing by the foreign matter inspection unit of the present invention.

首先,將成為檢查對象之基板W載置於基板載置台20(步驟s10)。 First, the substrate W to be inspected is placed on the substrate stage 20 (step s10).

然後,自照明單元31朝向檢查對象區域R照射照明光32(步驟s11),並藉由分離偏光部5使來自附著於基板W之正面之異物之散射光分離、偏光(步驟s12)。 Then, the illumination light 32 is irradiated from the illumination unit 31 toward the inspection target region R (step s11), and the scattered light from the foreign matter attached to the front surface of the substrate W is separated and polarized by the separation polarizing portion 5 (step s12).

然後,將於S偏光狀態下所拍攝到之圖像獲取至圖像處理裝置(步驟s13),並基於該圖像進行檢查,而獲取檢查結果(即S偏光檢查結果)(步驟s14)。 Then, the image captured in the S-polarized state is acquired to the image processing apparatus (step s13), and the inspection is performed based on the image, and the inspection result (that is, the S-polarization inspection result) is acquired (step s14).

與此同時,將於P偏光狀態下所拍攝到之圖像獲取至圖像處理裝置(步驟s15),並基於該圖像進行檢查,而獲取檢查結果(即P偏光檢查 結果)(步驟s16)。 At the same time, the image captured in the P-polarized state is acquired to the image processing apparatus (step s15), and an inspection is performed based on the image, and the inspection result is acquired (ie, P-polarization inspection) Result) (step s16).

然後,於圖像處理裝置內,比較S偏光檢查結果與P偏光檢查結果(步驟s17)。此時,S偏光攝像部4s及P偏光攝像部4p之攝像相機42s、42p係相對於基板W之法線設定為角度θ2而配置,因此,為了使檢測出之異物之位置資訊不會因基板W之厚度而於第1主面S1側(即正面側)及第2主面S2側(即背面側)產生偏差,而預先於俯視基板W之座標系統內進行位置修正。 Then, in the image processing apparatus, the S-polarization inspection result and the P-polarization inspection result are compared (step s17). At this time, the imaging cameras 42s and 42p of the S-polarized imaging unit 4s and the P-polarized imaging unit 4p are disposed at an angle θ2 with respect to the normal line of the substrate W. Therefore, the position information of the detected foreign matter is not caused by the substrate. The thickness of W is shifted on the first main surface S1 side (that is, the front side) and the second main surface S2 side (that is, the back side), and the position is corrected in advance in the coordinate system of the substrate W in plan view.

然後,對位於俯視基板W之座標系統之同一位置之異物進行比較處理,若為S偏光狀態下之散射光強度>P偏光狀態下之散射光強度,則判定為異物附著於基板之正面側,若為P偏光狀態下之散射光強度>S偏光狀態下之散射光強度,則判定為異物附著於基板之背面側(步驟s18)。 Then, the foreign matter at the same position in the coordinate system of the substrate W is compared, and if the scattered light intensity in the S-polarized state is > the scattered light intensity in the P-polarized state, it is determined that the foreign matter adheres to the front side of the substrate. When the intensity of the scattered light in the P-polarized state is the intensity of the scattered light in the S-polarized state, it is determined that the foreign matter adheres to the back side of the substrate (step s18).

然後,視需要,輸出關於附著於基板W之第1主面S1側及第2主面S2側之異物之大小或個數等表面狀態之檢查結果(步驟s19)。 Then, if necessary, the inspection result of the surface state such as the size or the number of the foreign matter attached to the first main surface S1 side and the second main surface S2 side of the substrate W is output (step s19).

[檢查對象及檢查結果之例] [Example of inspection object and inspection result]

圖5係表示實現本發明之形態之一例中設為檢查對象之基板之一例之俯視圖。於圖5中,表示於成為檢查對象之基板W之第1主面S1側(即正面側)附著有較大之異物X1及較小之異物X2,於基板W之第2主面S2側(即背面側)附著有較大之異物X3及較小之異物X4之情況。 Fig. 5 is a plan view showing an example of a substrate to be inspected in an example of the embodiment of the present invention. In FIG. 5, a large foreign matter X1 and a small foreign matter X2 are attached to the first main surface S1 side (ie, the front side) of the substrate W to be inspected, and the second main surface S2 side of the substrate W is attached ( That is, the back side is attached with a large foreign matter X3 and a small foreign matter X4.

圖6係表示實現本發明之形態之一例中檢查所得之各結果之一例之概念圖。於圖6(a)中,表示上述步驟s13(即S偏光狀態)中之攝像圖像,於圖6(b)中,表示上述步驟s14(即P偏光狀態)中之攝像圖像。 Fig. 6 is a conceptual diagram showing an example of the results obtained by inspection in an example of the embodiment of the present invention. In Fig. 6(a), the captured image in the above step s13 (i.e., the S-polarized state) is shown, and in Fig. 6(b), the captured image in the above-described step s14 (i.e., the P-polarized state) is shown.

而且,於圖6(c)中,表示有作為藉由上述步驟s18輸出之基板W之第1主面S1側(即正面側)之檢查結果,附著有較大之異物X1及較小之異物X3之情況。 Further, in Fig. 6(c), the inspection results of the first main surface S1 side (i.e., the front side) of the substrate W outputted by the above-described step s18 are shown, and a large foreign matter X1 and a small foreign matter are adhered. The case of X3.

進而,於圖6(d)中,表示有作為上述步驟s18中輸出之基板W之第2主面S2側(即背面側)之檢查結果,附著有較大之異物X2及較小之異物X4之情況。 Further, in Fig. 6(d), the inspection results of the second main surface S2 side (i.e., the back side) of the substrate W outputted in the above step s18 are shown, and a large foreign matter X2 and a small foreign matter X4 are attached. The situation.

再者,作為檢查結果之輸出例,於圖6(c)(d)中,例示將各異物X1~4繪圖於基板W之XY座標上之形態,但並不限於此種形態,亦可為進行數值資料之輸出之形態。 Further, as an example of the output of the inspection result, in the form of (c) and (d) of FIG. 6 , the foreign matter X1 to the fourth embodiment are illustrated on the XY coordinates of the substrate W. However, the present invention is not limited to this embodiment, and may be The form of output of numerical data.

相對移動部8係一面維持照明部3、分離偏光部5、S偏光攝像部4s及P偏光攝像部4p之位置關係,一面使成為檢查對象之基板W相對於該等而相對性地移動。相對移動部8係一面使用僅能拍攝基板W之一部分區域之構成之照明部3、S偏光攝像部4s及P偏光攝像部4p,一面藉由掃描動作或分步重複動作而能夠拍攝所有設定於基板W之檢查對象區域。 The relative movement unit 8 maintains the positional relationship between the illumination unit 3, the separation polarization unit 5, the S polarization imaging unit 4s, and the P polarization imaging unit 4p, and relatively moves the substrate W to be inspected relative to the above. The illuminating unit 3, the S-polarized imaging unit 4s, and the P-polarized imaging unit 4p, which are configured to capture only a partial region of the substrate W, can be photographed by the scanning operation or the step-and-repeat operation. The inspection target area of the substrate W.

具體而言,相對移動部8可使用所謂之XY平台而實現,且具備X軸平台81及Y軸平台82而構成,該X軸平台81係安裝於裝置框架11上且使滑塊沿X方向以特定之速度移動並於特定之位置靜止,該Y軸平台82係安裝於X軸平台81之滑塊上且使滑塊沿Y方向以特定之速度移動並於特定之位置靜止。於Y軸平台82之滑塊上,安裝有基板載置台20。藉此,可使載置於基板載置台20之基板W相對於照明部3、分離偏光部5、S偏光攝像部4s及P偏光攝像部4p而相對移動,可對基板W整體進行複數次分割掃描並進行拍攝、檢查。 Specifically, the relative moving portion 8 can be realized by using a so-called XY stage, and is configured to include an X-axis stage 81 and a Y-axis stage 82 which are attached to the apparatus frame 11 and which are arranged in the X direction. Moving at a particular speed and stationary at a particular location, the Y-axis platform 82 is mounted on the slider of the X-axis platform 81 and moves the slider at a particular speed in the Y direction and is stationary at a particular location. A substrate mounting table 20 is mounted on the slider of the Y-axis stage 82. Thereby, the substrate W placed on the substrate stage 20 can be relatively moved with respect to the illumination unit 3, the separation polarization unit 5, the S polarization imaging unit 4s, and the P polarization imaging unit 4p, and the entire substrate W can be divided into multiple times. Scan and shoot and check.

又,視需要,亦可為於Y軸平台82之滑塊與基板載置台20之間具備旋轉台機構之構成。藉此,可變更基板W之角度,而可修正基板W之位置偏差、或者將基板之拍攝、檢查或接收、交接等之方向變更為90度、180度、270度。 Further, a rotary table mechanism may be provided between the slider of the Y-axis stage 82 and the substrate stage 20 as needed. Thereby, the angle of the substrate W can be changed, and the positional deviation of the substrate W can be corrected, or the direction of photographing, inspection, reception, and transfer of the substrate can be changed to 90 degrees, 180 degrees, or 270 degrees.

再者,於應用本發明時,於上述內容中,表示了如下構成:一面自照明部3照射片狀照明光,一面使基板W連續移動,並藉由S偏光 攝像部4s及P偏光攝像部4p之線型感測器進行拍攝。若為此種構成,則可一面使基板W沿Y方向連續移動一面進行拍攝,故而能夠縮短時間,且無需光學性之特殊修正,因此,能夠實現迅速之檢查。 Further, in the case of applying the present invention, in the above description, a configuration is shown in which the substrate W is continuously moved while the sheet-shaped illumination light is irradiated from the illumination unit 3, and S-polarized light is used. The linear sensor of the imaging unit 4s and the P-polarized imaging unit 4p performs imaging. According to this configuration, since the substrate W can be imaged while continuously moving in the Y direction, the time can be shortened, and no special correction of the optical property is required. Therefore, rapid inspection can be realized.

由於本發明之基板檢查裝置1為此種構成,故而能夠檢測附著於設定在基板W上之檢查對象區域R之異物之位置及大小,並且精度良好地判定各個異物附著於基板W之正面S1側、背面S2側之哪一者。而且,即便檢查對象基板變薄,亦可比較藉由S偏光攝像部4s拍攝並檢查所得之結果、與藉由P偏光攝像部4p拍攝並檢查所得之結果,並根據成為檢查對象之基板上之同一位置之散射光強度之大小關係,正背分離地檢查附著於基板之異物附著於該基板之正面側、背面側之哪一者。 Since the substrate inspection apparatus 1 of the present invention has such a configuration, it is possible to detect the position and size of the foreign matter adhering to the inspection target region R set on the substrate W, and accurately determine that the foreign matter adheres to the front surface S1 side of the substrate W. Which one of the back side S2 side. In addition, even if the inspection target substrate is thinned, the result obtained by the S-polarized imaging unit 4s and being inspected and the result of the inspection by the P-polarized imaging unit 4p can be compared with the result obtained by the P-polarized imaging unit 4p, and based on the substrate to be inspected. The magnitude relationship of the intensity of the scattered light at the same position is examined by which the foreign matter adhering to the substrate adheres to the front side and the back side of the substrate.

[照明光及攝像之角度設定] [Lighting and camera angle setting]

再者,於上述內容中,例示了如下構成:以相對於基板W之第1主面S1之法線H1,自照明部3朝向檢查對象區域R照射之光32之角度θ1成為80度±5度以內,且藉由攝像相機42進行拍攝之角度θ2成為45度±5度以內之方式,配置有照明部3、分離偏光部5、S偏光攝像部4s及P偏光攝像部4p之各機器。 In the above, the configuration is such that the angle θ1 of the light 32 irradiated from the illumination unit 3 toward the inspection target region R is 80 degrees ± 5 with respect to the normal line H1 of the first principal surface S1 of the substrate W. The illuminating unit 3, the separated polarizing unit 5, the S-polarized imaging unit 4s, and the P-polarized imaging unit 4p are disposed so that the angle θ2 of the imaging by the imaging camera 42 is within 45 degrees ± 5 degrees.

一般而言,來自異物之散射光會根據角度而產生強弱之差,且該強弱之差因異物之粒徑之差異而不同。但是,可知若設定為如上所述般之角度θ1、θ2,則針對各種粒徑之異物均可應用本發明。 In general, the scattered light from foreign matter generates a difference in strength and weakness depending on the angle, and the difference between the strong and the weak differs depending on the difference in the particle diameter of the foreign matter. However, it is understood that the present invention can be applied to foreign matter of various particle diameters by setting the angles θ1 and θ2 as described above.

進而,亦可知若該等角度θ1、θ2所成之角度(即θ1+θ2)為125度±10度以內,則可獲得相同之結果。 Further, it is also known that the same result can be obtained if the angle formed by the angles θ1 and θ2 (that is, θ1 + θ2) is within 125 degrees ± 10 degrees.

[照明光及攝像之另一角度設定] [Another angle setting for illumination and video]

又,亦可知若為欲知異物之分佈傾向之情形、或嚴格性之要求不那麼高之情形、已預先明確成為檢查對象之異物之粒徑之情形等,則不限於上述條件,而可於以下所示之條件下應用本發明。 In addition, it is also known that the case where the distribution tendency of the foreign matter is desired or the case where the strictness is not required is high, and the particle size of the foreign matter to be inspected is determined in advance is not limited to the above conditions. The present invention is applied under the conditions shown below.

即,預先以相對於基板W之第1主面S1之法線H1,自照明部3朝向檢查對象區域R照射之光32之角度θ1為40~85度之範圍內,且藉由攝像相機42進行拍攝之角度θ2成為0~60之範圍內之方式,配置照明部3、分離偏光部5、S偏光攝像部4s及P偏光攝像部4p之各機器。 In other words, the angle θ1 of the light 32 irradiated from the illumination unit 3 toward the inspection target region R in the range of 40 to 85 degrees with respect to the normal line H1 of the first principal surface S1 of the substrate W is 40 to 85 degrees in advance, and by the camera 42 Each of the illumination unit 3, the separation polarization unit 5, the S polarization detection unit 4s, and the P polarization imaging unit 4p is disposed such that the angle θ2 of the imaging is in the range of 0 to 60.

再者,關於上述基板W,例示了使用厚度t為0.3mm之無鹼玻璃之情形,但即便為其他厚度之無鹼玻璃,亦可應用本發明。進而,即便為於基板W之正面S1側或背面S2側塗佈有ITO(Indium Tin Oxide,氧化銦錫)或SiO2等薄膜之情形,只要不對來自異物之散射光強度產生影響,亦可應用本發明。 Further, the substrate W is exemplified by the use of an alkali-free glass having a thickness t of 0.3 mm, but the present invention can be applied even to an alkali-free glass having another thickness. Further, even when a film such as ITO (Indium Tin Oxide) or SiO 2 is applied to the front surface S1 side or the back surface S2 side of the substrate W, it may be applied as long as it does not affect the intensity of scattered light from foreign matter. this invention.

又,不限定於如上所述般之角度θ1、θ2之條件、或基板W之材質、厚度,即便為除此以外之條件,只要關於附著於基板之正面S1側之異物,為S偏光狀態下之散射光強度>P偏光狀態下之散射光強度,且關於附著於基板之背面S2側之異物,P偏光狀態下之散射光強度>S偏光狀態下之散射光強度之關係(前提條件)成立,則亦可與上述判定程序同樣地,比較藉由S偏光攝像部4s拍攝並檢查所得之結果、與藉由P偏光攝像部4p拍攝並檢查所得之結果,並根據成為檢查對象之基板上之同一位置之散射光強度之大小關係,若S偏光狀態下之散射光強度>P偏光狀態下之散射光強度則判定為異物附著於基板之正面側,若P偏光狀態下之散射光強度>S偏光狀態下之散射光強度則判定為異物附著於基板之背面側,從而應用本發明。 In addition, the conditions of the angles θ1 and θ2 as described above, or the material and thickness of the substrate W, and other conditions are as long as the foreign matter adhering to the front surface S1 side of the substrate is in the S-polarized state. The intensity of the scattered light is > the intensity of the scattered light in the P-polarized state, and the relationship between the scattered light intensity in the P-polarized state and the intensity of the scattered light in the S-polarized state (prerequisite) is established with respect to the foreign matter adhering to the back surface S2 of the substrate. In the same manner as the above-described determination program, the result obtained by the S-polarized imaging unit 4s and the result of the inspection, and the result obtained by the P-polarized imaging unit 4p and being inspected can be compared with the result of the inspection, and based on the substrate to be inspected. The relationship between the intensity of the scattered light at the same position, if the intensity of the scattered light in the S-polarized state is > the intensity of the scattered light in the P-polarized state, it is determined that the foreign matter adheres to the front side of the substrate, and if the intensity of the scattered light in the P-polarized state is >S The intensity of the scattered light in the polarized state is determined to be that the foreign matter adheres to the back side of the substrate, and the present invention is applied.

[於第2態樣之形態中之應用] [Application in the form of the second aspect]

於上述內容中,表示偏振分光鏡50將S偏光狀態之光與P偏光狀態之光以各1:1進行分離之例,且對針對S偏光狀態下之散射光強度及P偏光狀態下之散射光強度僅進行大小比較之形態(即第1態樣之形態)進行說明。 In the above description, the polarization beam splitter 50 is an example in which the light in the S-polarized state and the light in the P-polarized state are separated by 1:1, and the scattering light intensity in the S-polarized state and the scattering in the P-polarized state. The light intensity is described only in the form of the size comparison (that is, the form of the first aspect).

但是,於製作偏振分光鏡50方面,存在難以將S偏光/P偏光完全 地分離成1:1而產生偏差之情況。為了亦應對此種情形,本發明之基板檢查裝置亦可為以下所示般之形態(即第2態樣之形態)。 However, in the production of the polarization beam splitter 50, it is difficult to completely align the S-polarized/P-polarized light. The ground is separated into 1:1 and the deviation occurs. In order to cope with such a situation, the substrate inspecting apparatus of the present invention may be in the form as shown below (that is, in the form of the second aspect).

即,亦可於對S偏光狀態下之散射光強度及P偏光狀態下之散射光強度中之任一者乘以倍率係數後,藉由異物檢查部之檢查結果比較部進行比較。或者,於對S偏光狀態下之散射光強度及P偏光狀態下之散射光強度之各者乘以不同之倍率係數後,藉由異物檢查部之檢查結果比較部進行比較。 In other words, the multiplier coefficient may be multiplied by any one of the scattered light intensity in the S-polarized state and the scattered light intensity in the P-polarized state, and then compared by the inspection result comparing unit of the foreign matter inspection unit. Alternatively, each of the scattered light intensity in the S-polarized state and the scattered light intensity in the P-polarized state is multiplied by a different magnification factor, and then compared by the inspection result comparing unit of the foreign matter inspection unit.

而且,藉由異物檢查部之異物附著面判定部, Moreover, the foreign matter attachment surface determination unit of the foreign matter inspection unit is

針對成為檢查對象之基板上之同一位置之散射光強度,藉由異物檢查部之檢查結果比較部進行比較所得之結果 The result of comparison between the inspection result comparison unit of the foreign matter inspection unit by the intensity of the scattered light at the same position on the substrate to be inspected

若為成為S偏光狀態下之散射光強度÷P偏光狀態下之散射光強度>k(k為常數)之條件,則判定為異物附著於該成為檢查對象之基板之正面側,若為成為S偏光狀態下之散射光強度÷P偏光狀態下之散射光強度<k(k為常數)之條件,則判定為異物附著於該成為檢查對象之基板之背面側。 When the intensity of the scattered light in the S-polarized state ÷P is less than the condition of the scattered light intensity > k (k is a constant), it is determined that the foreign matter adheres to the front side of the substrate to be inspected, and if it is S When the intensity of the scattered light in the polarized state ÷P is less than the condition of the scattered light intensity <k (k is a constant) in the polarized state, it is determined that the foreign matter adheres to the back side of the substrate to be inspected.

於該情形時,關於倍率係數、或成為判定基準之常數k之值,進行於基板W之正面S1上或背面S2上散佈標準粒子,並測定S偏光狀態下之散射光強度及P偏光狀態下之散射光強度等,而於預先掌握之後預先設定於異物檢查部。 In this case, the standard particle is spread on the front surface S1 or the back surface S2 of the substrate W with respect to the magnification factor or the value of the constant k which is the criterion for determination, and the scattered light intensity and the P-polarized state in the S-polarized state are measured. The scattered light intensity or the like is set in advance in the foreign matter inspection unit after being grasped in advance.

藉此,即便為除第1態樣之形態所示之散射光強度之大小比較條件以外之條件,亦可比較藉由S偏光攝像部4s拍攝並檢查所得之結果、與藉由P偏光攝像部4p拍攝並檢查所得之結果,並根據成為檢查對象之基板上之同一位置之散射光強度之大小關係,正背分離地檢查附著於基板之異物附著於正面側、背面側之哪一者。其結果為,可將本發明應用於各種材質或厚度之基板。 Therefore, even if the conditions other than the magnitude of the scattered light intensity shown in the form of the first aspect are compared, the result obtained by the S-polarized image capturing unit 4s and inspected can be compared with the P-polarized imaging unit. 4p was taken and the result obtained was examined, and the size of the scattered light intensity at the same position on the substrate to be inspected was examined, and the foreign matter adhering to the substrate was attached to the front side and the back side by the back. As a result, the present invention can be applied to substrates of various materials or thicknesses.

[變化例] [variation]

於上述內容中,表示如下構成:具備相對移動部8,該相對移動部8使照明部3、分離偏光部5、S偏光攝像部4s及P偏光攝像部4p相對於成為檢查對象之基板W而相對性地移動,S偏光攝像部4s及P偏光攝像部4p具備線型感測器,該線型感測器係於與相對性地移動之方向正交之方向上具有特定之長度,照明部3係對藉由線型感測器拍攝之檢查對象區域照射片狀照明光。 In the above, the configuration includes a relative moving unit 8 that causes the illumination unit 3, the separation polarization unit 5, the S polarization imaging unit 4s, and the P polarization imaging unit 4p to be aligned with the substrate W to be inspected. The S-polarized imaging unit 4s and the P-polarized imaging unit 4p are provided with a linear sensor having a specific length in a direction orthogonal to the direction in which the lens is relatively moved, and the illumination unit 3 is configured to move relative to each other. The sheet-shaped illumination light is irradiated to the inspection target area photographed by the line sensor.

若為該構成,則可使用解析度較高之線型感測器進行檢查,可將照明光線之照射範圍設為最小限度,因此,容易實現成本降低或尺寸降低。進而,可防止因同時拍攝來自存在於同一面(若為檢查第1主面時則為第1主面)或相反側(若為檢查第1主面時則為第2主面)之其他異物之散射光,而無法正確地獲得所期望之檢查結果之不良情況,故而可謂為更佳之形態。 According to this configuration, it is possible to perform inspection using a linear sensor having a high resolution, and it is possible to minimize the irradiation range of the illumination light, and thus it is easy to achieve cost reduction or size reduction. Further, it is possible to prevent other foreign matter from being present on the same surface (the first main surface if the first main surface is inspected) or the opposite side (the second main surface if the first main surface is inspected) The scattered light does not correctly obtain the desired inspection result, so it is a better form.

但是,於實現本發明方面,並不限於該形態,亦可設為如下所述般之構成。即,構成為於S偏光攝像部4s及P偏光攝像部4p中使用面型感測器,照明部3對藉由面型感測器拍攝之包含檢查對象區域之範圍照射照明光。於該情形時,設為如下構成:具備相對移動部8,該相對移動部8使照明部3、S偏光攝像部4s及P偏光攝像部4p相對於成為檢查對象之基板W而相對性地移動,且一面使S偏光攝像部4s及P偏光攝像部4p相對移動一面使閃光儀發出照明光,並重複進行拍攝(即,進行分割攝像)。 However, the present invention is not limited to this embodiment, and may be configured as described below. In other words, the surface sensor is used for the S-polarized image capturing unit 4s and the P-polarized image capturing unit 4p, and the illuminating unit 3 illuminates the range of the region including the inspection target region captured by the surface sensor. In this case, the relative movement unit 8 is configured to relatively move the illumination unit 3, the S-polarized imaging unit 4s, and the P-polarized imaging unit 4p with respect to the substrate W to be inspected. The S-polarized imaging unit 4s and the P-polarized imaging unit 4p are relatively moved while the illumination device emits illumination light, and the imaging is repeated (that is, the divided imaging is performed).

或者,亦可設為如下構成:藉由相對移動部8以分步重複方式使基板W移動、靜止,並且於照明部具備面照明,於攝像部具備面型感測器,間歇地對設定於基板W之檢查對象區域R進行分割攝像。 Alternatively, the substrate W may be moved and stopped in a step-and-repeat manner with respect to the moving portion 8, and the illumination portion may be provided with surface illumination, and the imaging unit may be provided with a surface sensor, which is intermittently set to The inspection target region R of the substrate W is divided and imaged.

或者,亦可設為如下構成:不具備相對移動部8,使用面型感測 器相機一次性地拍攝檢查對象區域R。 Alternatively, the configuration may be such that the relative movement unit 8 is not provided and the surface sensing is used. The camera photographs the inspection target area R at one time.

再者,於以分步重複方式或一次攝像方式進行拍攝之情形時,分離偏光部5、S偏光攝像部4s及P偏光攝像部4p係以特定之角度θ2相對於設定在基板W上之檢查對象區域R之法線H1傾斜,故而只要將拍攝成梯形上之圖像修正為矩形、或使用歪斜修正透鏡進行拍攝即可。 Further, when the image is captured by the step-and-repeat method or the single image capturing method, the separation polarizing unit 5, the S-polarized image capturing unit 4s, and the P-polarized image capturing unit 4p are aligned with respect to the setting on the substrate W at a specific angle θ2. Since the normal line H1 of the target region R is inclined, it is only necessary to correct the image captured on the trapezoidal shape to a rectangular shape or to use a skew correction lens for imaging.

又,亦可設為如下構成(即一次攝像方式):不進行如上所述般之分割攝像,將基板W之整個面設定為檢查對象區域R,使用朝向該檢查對象區域R一次性地照射照明光之照明部、及具備拍攝該檢查對象區域R之面型感測器相機及透鏡之攝像部而一次性地進行拍攝。 In addition, it is possible to adopt a configuration in which the imaging is performed as described above, and the entire surface of the substrate W is set as the inspection target region R, and the illumination is applied to the inspection target region R at a time. The light illumination unit and the imaging unit including the surface sensor camera and the lens that captures the inspection target region R are imaged at one time.

再者,相對移動部8並不限於如上所述般之構成,亦可為使用旋轉輥搬送基板W之構成(即輸送帶搬送)、或使用游樑(walking beam)及固持部進行搬送之構成(即梭式搬送)等。 Further, the relative moving portion 8 is not limited to the above-described configuration, and may be configured to convey the substrate W using a rotating roller (that is, convey the belt) or to be transported using a walking beam and a holding portion. (ie shuttle transfer), etc.

[變化例] [variation]

再者,於上述內容中,例示了具備偏振分光鏡50作為分離偏光部5之構成。若為該構成,則能夠高效地將入射之散射光分離成S偏光狀態及P偏光狀態,故而於無法使照明光之強度較強之情形時、或散射光之強度較弱之情形時較佳。但是,於可使照明光之強度較強之情形時、或散射光之強度某程度較強之情形時,不僅可藉由此種構成,亦可藉由如下般之構成而構成本發明之分離偏光部。 In the above description, the configuration in which the polarization beam splitter 50 is provided as the separation polarizing unit 5 is exemplified. According to this configuration, it is possible to efficiently separate the incident scattered light into the S-polarized state and the P-polarized state. Therefore, when the intensity of the illumination light cannot be made strong or the intensity of the scattered light is weak, it is preferable. . However, when the intensity of the illumination light is strong or the intensity of the scattered light is strong, the separation of the present invention can be constituted not only by such a configuration but also by the following configuration. Polarized section.

圖7係表示實現本發明之形態之另一例之立體圖。 Fig. 7 is a perspective view showing another example of the embodiment of the present invention.

圖8係複合地表示實現本發明之形態之另一例之主要部分及拍攝到之散射光強度之圖。 Fig. 8 is a view showing, in combination, a main part of another example for realizing the embodiment of the present invention and a captured scattered light intensity.

於圖7、8中,表示與圖1、2所示之分離偏光部5為不同構成之分離偏光部5B。 In Figs. 7 and 8, the separation polarizing portion 5B having a configuration different from that of the separation polarizing portion 5 shown in Figs. 1 and 2 is shown.

於分離偏光部5B中,具備半反射鏡50B、S偏光濾光器54s、及P偏光濾光器54p。 The separation polarizing unit 5B includes a half mirror 50B, an S polarizing filter 54s, and a P polarizing filter 54p.

半反射鏡50B係使入射之光51a、52a之一部分51b、52b彎折90度而反射,且使一部分51c、52c直行通過。於此,例示使入射之光之一半彎折而反射,且使其餘之一半直行通過(即,將入射光分離成1:1)之構成而進行說明。 The half mirror 50B bends one of the portions 51b, 52b of the incident light 51a, 52a by 90 degrees, and passes the portions 51c, 52c straight through. Here, a description will be given of a configuration in which one half of the incident light is bent and reflected, and the other half is passed straight (that is, the incident light is separated into 1:1).

使分離之光中之一者(於此為彎折反射側)51b、52b通過S偏光濾光器,並使另一者(於此為直行通過側)51c、52c通過P偏光濾光器。所謂S偏光濾光器係使S偏光成分之光高效率地透過,且高效率地吸收或反射P偏光成分之光。另一方面,所謂P偏光濾光器係使P偏光成分之光高效率地透過,且高效率地吸收或反射S偏光成分之光。 One of the separated lights (here, the bending reflection sides) 51b, 52b passes through the S polarizing filter, and the other (here, the straight passing side) 51c, 52c passes through the P polarizing filter. The S-polarized filter transmits light of the S-polarized component efficiently, and efficiently absorbs or reflects the light of the P-polarized component. On the other hand, the P-polarized filter transmits light of the P-polarized component efficiently, and efficiently absorbs or reflects the light of the S-polarized component.

通過S偏光濾光器之光51s'、52s'分別被S偏光攝像部4s拍攝,通過P偏光濾光器之光51p'、52p'分別被P偏光攝像部4p拍攝。其以後之檢查流程與上述相同,故而省略說明。 The light 51s' and 52s' passing through the S-polarized filter are respectively imaged by the S-polarized imaging unit 4s, and the light 51p' and 52p' of the P-polarized filter are respectively captured by the P-polarized imaging unit 4p. The subsequent inspection flow is the same as described above, and thus the description is omitted.

再者,於照明光32之強度較強之情形時或異物之粒徑較大等散射光之強度某種程度較強之情形時,即便於藉由半反射鏡分離(即光量衰減至一半)後,亦能夠確保通過S偏光或P偏光濾光器之光之強度,因此能夠進行正確之檢查。 Furthermore, when the intensity of the illumination light 32 is strong or when the intensity of the scattered light is large, such as when the intensity of the scattered light is relatively strong, even if it is separated by a half mirror (that is, the amount of light is attenuated to half) After that, the intensity of the light passing through the S-polarized or P-polarized filter can also be ensured, so that the correct inspection can be performed.

[變化例] [variation]

再者,於上述內容中,例示於照明部之光源部具備氙氣燈等之構成而進行了說明。但是,於實現本發明方面,並不限於此種構成,亦可設為具備其他光源器件之構成。作為照明部之光源器件,例如可例示螢光燈或LED、半導體雷射振盪器等。尤佳為,於照明部中具備半導體雷射振盪器,且自照明部朝向檢查對象區域照射之照明光為被半導體雷射振盪器激發之光。 In the above description, the light source unit of the illumination unit is configured to include a xenon lamp or the like. However, the present invention is not limited to such a configuration, and may be configured to include other light source devices. As the light source device of the illumination unit, for example, a fluorescent lamp, an LED, a semiconductor laser oscillator, or the like can be exemplified. More preferably, the illumination unit includes a semiconductor laser oscillator, and the illumination light that is emitted from the illumination unit toward the inspection target region is light that is excited by the semiconductor laser oscillator.

被半導體雷射振盪器激發之光係與其他光源器件相比波長或振幅中偏差較少且相位亦一致,即所謂之同調光。因此,能夠容易地使用相位板調節偏光方向。 The light system excited by the semiconductor laser oscillator has less deviation in wavelength or amplitude than the other light source devices and has the same phase, that is, the same dimming. Therefore, the phase plate can be easily used to adjust the polarization direction.

例如,若來自具備半導體雷射振盪器之照明部之照明光為沿X方向之直線偏光,則轉換成圓偏光之光,並朝向檢查對象區域照射。或者,將成為以光之前進方向作為旋轉中心自與X方向水平之方向旋轉45度後之狀態(即S偏光與P偏光成為1:1之狀態)之直線偏光之光朝向檢查對象區域照射。該成為旋轉45度後之狀態之直線偏光之光可於使半導體雷射振盪器旋轉45度後之狀態下配置,亦可使用相位板實現。 For example, when the illumination light from the illumination unit including the semiconductor laser oscillator is linearly polarized in the X direction, it is converted into circularly polarized light and is irradiated toward the inspection target region. Alternatively, the linearly polarized light in a state in which the light advance direction is a rotation center from the horizontal direction of the X direction by 45 degrees (that is, a state in which the S polarized light and the P polarized light are 1:1) is irradiated toward the inspection target region. The linearly polarized light in a state of being rotated by 45 degrees can be disposed in a state where the semiconductor laser oscillator is rotated by 45 degrees, or can be realized by using a phase plate.

又,不限於使用1個半導體雷射振盪器之構成,亦可使用偏光方向不同之2個半導體雷射振盪器,設為混合有S偏光成分之光及P偏光成分之光之狀態,並朝向檢查對象區域照射。 Further, it is not limited to the configuration using one semiconductor laser oscillator, and two semiconductor laser oscillators having different polarization directions may be used, and the state in which the light of the S-polarized component and the P-polarized component are mixed may be used. Check the target area for illumination.

再者,自具備半導體雷射振盪器之照明部照射之照明光較佳為S偏光成分與P偏光成分為相同比率。若如此,則僅藉由比較藉由S偏光攝像部所拍攝之S偏光狀態之散射光強度與藉由P偏光攝像部所拍攝之P偏光狀態之散射光強度之哪一者較大,便能夠容易地判定異物附著於基板之第1主面或第2主面之哪一者。 Further, it is preferable that the illumination light irradiated from the illumination unit including the semiconductor laser oscillator has the same ratio of the S-polarized component and the P-polarized component. In this case, it is possible to compare only the scattered light intensity of the S-polarized state captured by the S-polarized imaging unit and the scattered light intensity of the P-polarized state captured by the P-polarized imaging unit. It is easy to determine which of the first main surface or the second main surface of the substrate the foreign matter adheres to.

但是,即便自具備半導體雷射振盪器之照明部照射之照明光之S偏光成分與P偏光成分並非相同比率,亦能夠藉由對由S偏光攝像部所拍攝之S偏光狀態之散射光強度與由P偏光攝像部所拍攝之P偏光狀態之散射光強度之至少一者乘以倍率係數並進行比較,而根據該等之大小關係,容易地判定異物附著於基板之第1主面或第2主面之哪一者。 However, even if the S-polarized component and the P-polarized component of the illumination light irradiated from the illumination unit including the semiconductor laser oscillator are not at the same ratio, the intensity of the scattered light in the S-polarized state captured by the S-polarized imaging unit can be At least one of the scattered light intensities of the P-polarized state captured by the P-polarized imaging unit is multiplied by a magnification factor and compared, and based on the magnitude relationship, it is easy to determine that the foreign matter adheres to the first main surface or the second surface of the substrate. Which of the main faces?

[變化例] [variation]

再者,於上述內容中,如圖1、2、7、8所示般,表示有作為自照明部3朝向檢查對象區域R照射之照明光32,直接地照射至檢查對象區域R之構成。但是,於實現本發明方面,並不限於此種構成,亦可設為如圖9所示般之構成。 In the above, as shown in FIGS. 1, 2, 7, and 8, the illumination light 32 that is irradiated toward the inspection target region R from the illumination unit 3 is directly irradiated to the inspection target region R. However, the present invention is not limited to this configuration, and may be configured as shown in FIG.

圖9係表示實現本發明之形態之又一例之主要部分之前視圖。 Fig. 9 is a front elevational view showing the main part of still another example of the embodiment of the present invention.

於圖9中,表示自與圖1、2所示之照明部3之構成不同之照明部 3B、及自照射部3B照射之光33等。 In Fig. 9, an illumination unit different from the configuration of the illumination unit 3 shown in Figs. 1 and 2 is shown. 3B, light 33 irradiated from the irradiation unit 3B, and the like.

具體而言,照射部3B具備以將片狀照明光32沿大致垂直方向向下照射之方式配置之片光照明單元31、及配置於其下方之反射鏡35。反射鏡35係改變片狀照明光32之方向將其作為反射之照明光36照射至檢查對象區域R者。而且,該照明光36照射至基板W之檢查對象區域R,自異物X1、X2放出之散射光51a、52a入射至分離偏光部5。 Specifically, the illuminating unit 3B includes a sheet light illumination unit 31 that illuminates the sheet-shaped illumination light 32 downward in a substantially vertical direction, and a mirror 35 disposed below the sheet illumination unit 31. The mirror 35 changes the direction of the sheet-shaped illumination light 32 to illuminate it as the reflected illumination light 36 to the inspection target region R. Then, the illumination light 36 is irradiated onto the inspection target region R of the substrate W, and the scattered light 51a, 52a emitted from the foreign matter X1, X2 is incident on the separation polarizing portion 5.

[變化例] [variation]

再者,於上述內容中,表示了於S偏光攝像部4s及P偏光攝像部4p中分別具備個別之透鏡43s、43p之構成。但是,並不限於此種構成,亦可設為於分離偏光部5之入射側具備共用之透鏡43(於圖1中以虛線表示)以代替使用個別之透鏡43s、43p之構成。 In the above description, the S-polarized imaging unit 4s and the P-polarized imaging unit 4p are provided with individual lenses 43s and 43p. However, the configuration is not limited to this, and a common lens 43 (indicated by a broken line in FIG. 1) may be provided on the incident side of the separation polarizing unit 5 instead of using the individual lenses 43s and 43p.

1‧‧‧基板檢查裝置 1‧‧‧Substrate inspection device

2‧‧‧基板保持部 2‧‧‧Substrate retention department

3‧‧‧照明部 3‧‧‧Lighting Department

4p‧‧‧P偏光攝像部 4p‧‧‧P Polarized Camera

4s‧‧‧S偏光攝像部 4s‧‧‧S polarized camera

5‧‧‧分離偏光部 5‧‧‧ Separation of polarized parts

7‧‧‧異物檢查部 7‧‧‧ Foreign Body Inspection Department

8‧‧‧相對移動部 8‧‧‧ Relative Mobile Department

11‧‧‧裝置框架 11‧‧‧ device framework

15‧‧‧連結構件 15‧‧‧Connected components

20‧‧‧基板載置台 20‧‧‧Substrate mounting table

31‧‧‧照明單元 31‧‧‧Lighting unit

32‧‧‧照明光 32‧‧‧Lights

33‧‧‧箭頭(光之前進方向) 33‧‧‧Arrows (light forward)

42p‧‧‧攝像相機(P偏光檢查用) 42p‧‧‧ camera (for P-polarization inspection)

42s‧‧‧攝像相機(S偏光檢查用) 42s‧‧‧ Camera Camera (for S-polarization inspection)

43‧‧‧透鏡 43‧‧‧ lens

43p‧‧‧透鏡(P偏光檢查用) 43p‧‧‧Lens (for P-polarization inspection)

43s‧‧‧透鏡(S偏光檢查用) 43s‧‧‧Lens (for S-polarization inspection)

50‧‧‧偏振分光鏡 50‧‧‧Polarizing beam splitter

81‧‧‧X軸平台 81‧‧‧X-axis platform

82‧‧‧Y軸平台 82‧‧‧Y-axis platform

R‧‧‧檢查對象區域 R‧‧‧ inspection area

W‧‧‧基板 W‧‧‧Substrate

X‧‧‧X軸 X‧‧‧X axis

Y‧‧‧Y軸 Y‧‧‧Y axis

Z‧‧‧Z軸 Z‧‧‧Z axis

Claims (8)

一種基板檢查裝置,其具備:基板保持部,其保持成為檢查對象之基板;照明部,其朝向設定於上述基板上之檢查對象區域照射照明光;分離偏光部,其將自上述檢查對象區域發出之散射光分離成S偏光狀態之光及P偏光狀態之光;S偏光攝像部,其拍攝上述散射光中被分離之S偏光狀態之光;P偏光攝像部,其拍攝上述散射光中被分離之P偏光狀態之光;及異物檢查部,其基於藉由上述S偏光攝像部及上述P偏光攝像部所拍攝之圖像,而檢查附著於該成為檢查對象之基板之正面側或背面側之異物之位置及大小;且於上述異物檢查部中具備異物附著面判定部,該異物附著面判定部係比較藉由上述S偏光攝像部拍攝並檢查所得之結果、與藉由上述P偏光攝像部拍攝並檢查所得之結果,並根據成為檢查對象之基板上之同一位置之散射光強度之大小關係,判定異物附著於該成為檢查對象之基板之正面側或背面側之哪一者。 A substrate inspection device including: a substrate holding portion that holds a substrate to be inspected; an illumination portion that emits illumination light toward an inspection target region set on the substrate; and a separation polarizing portion that emits from the inspection target region The scattered light is separated into light in a S-polarized state and light in a P-polarized state; an S-polarized imaging unit that captures light in a S-polarized state in which the scattered light is separated; and a P-polarized imaging unit that separates the captured scattered light And a foreign matter inspection unit that checks the front side or the back side of the substrate to be inspected based on the image captured by the S-polarized image capturing unit and the P-polarized image capturing unit; The foreign matter inspection unit includes a foreign matter attachment surface determination unit that compares the result of the image detection by the S-polarization imaging unit and the P-polarization imaging unit. Shooting and checking the obtained result, and determining the foreign matter adhesion according to the magnitude relationship of the scattered light intensity at the same position on the substrate to be inspected Which of the front side or the back side of the substrate to be inspected is the one to be examined. 如請求項1之基板檢查裝置,其中上述異物檢查部係比較藉由上述S偏光攝像部拍攝並檢查所得之結果、與藉由上述P偏光攝像部拍攝並檢查所得之結果,成為檢查對象之基板上 之同一位置之散射光強度之大小關係若為S偏光狀態之散射光強度>P偏光狀態之散射光強度,則判定為異物附著於該成為檢查對象之基板之正面側,若為P偏光狀態之散射光強度>S偏光狀態之散射光強度,則判定為異物附著於該成為檢查對象之基板之背面側。 The substrate inspection apparatus according to claim 1, wherein the foreign object inspection unit compares the result obtained by the S-polarized image capturing unit and the result of the inspection, and the result of the inspection by the P-polarized image capturing unit, and the result is a substrate to be inspected. on When the magnitude of the scattered light intensity at the same position is the scattered light intensity in the S-polarized state > the scattered light intensity in the P-polarized state, it is determined that the foreign matter adheres to the front side of the substrate to be inspected, and if it is in the P-polarized state When the intensity of the scattered light is less than the intensity of the scattered light in the S-polarized state, it is determined that the foreign matter adheres to the back side of the substrate to be inspected. 如請求項1之基板檢查裝置,其中上述異物檢查部具備異物附著面判定部,該異物附著面判定部係針對藉由上述S偏光攝像部拍攝並檢查所得之結果、及藉由上述P偏光攝像部拍攝並檢查所得之結果,於對至少一者乘以倍率係數後進行比較,成為檢查對象之基板上之同一位置之散射光強度之大小關係若為S偏光狀態之散射光強度÷P偏光狀態之散射光強度>k(k為常數),則判定為異物附著於該成為檢查對象之基板之正面側,若為S偏光狀態之散射光強度÷P偏光狀態之散射光強度<k(k為常數),則判定為異物附著於該成為檢查對象之基板之背面側。 The substrate inspection device according to claim 1, wherein the foreign object inspection unit includes a foreign matter attachment surface determination unit that captures and inspects the result obtained by the S polarization detection unit and the P-polarized image. The result of photographing and checking the result is obtained by multiplying at least one by the magnification factor, and the magnitude of the scattered light intensity at the same position on the substrate to be inspected is the scattered light intensity of the S-polarized state ÷P polarized state. When the intensity of the scattered light is > k (k is a constant), it is determined that the foreign matter adheres to the front side of the substrate to be inspected, and if the intensity of the scattered light in the S-polarized state is ÷P, the scattered light intensity of the polarized state is <k (k is In the case of the constant, it is determined that foreign matter adheres to the back side of the substrate to be inspected. 如請求項1至3中任一項之基板檢查裝置,其中於上述照明部中具備半導體雷射振盪器,且自上述照明部照射之照明光係藉由半導體雷射振盪器激發之光。 The substrate inspection apparatus according to any one of claims 1 to 3, wherein the illumination unit includes a semiconductor laser oscillator, and the illumination light emitted from the illumination unit is light excited by the semiconductor laser oscillator. 如請求項4之基板檢查裝置,其中自上述照明部照射之照明光之S偏光成分與P偏光成分為相同比率。 The substrate inspection device according to claim 4, wherein the S-polarized component and the P-polarized component of the illumination light irradiated from the illumination portion are at the same ratio. 如請求項1至5中任一項之基板檢查裝置,其中 上述成為檢查對象之基板為透明之玻璃基板,且上述照明部係以自上述照明部照射之照明光相對於上述檢查對象區域之法線以40~85度之角度照射之方式配置,且上述攝像部係以相對於上述檢查對象區域之法線以0~60度之角度拍攝上述檢查對象區域之方式配置。 The substrate inspection apparatus according to any one of claims 1 to 5, wherein The substrate to be inspected is a transparent glass substrate, and the illumination unit is disposed such that illumination light irradiated from the illumination unit is irradiated at an angle of 40 to 85 degrees with respect to a normal line of the inspection target region, and the imaging is performed. The part is arranged such that the inspection target area is imaged at an angle of 0 to 60 degrees with respect to the normal line of the inspection target area. 如請求項1至5中任一項之基板檢查裝置,其中上述成為檢查對象之基板為透明之玻璃基板,且藉由上述偏光部偏光而朝向檢查對象區域照射之光、與藉由上述攝像部拍攝之上述散射光係夾著上述檢查對象區域之法線設定為125度±10度以內。 The substrate inspection apparatus according to any one of claims 1 to 5, wherein the substrate to be inspected is a transparent glass substrate, and the light irradiated toward the inspection target region by the polarizing portion is polarized, and the imaging unit The scattered light of the image is set to be within 125 degrees ± 10 degrees with the normal line of the inspection target region interposed therebetween. 如請求項7之基板檢查裝置,其中上述成為檢查對象之基板為透明之玻璃基板,且該基板檢查裝置係以藉由上述偏光部偏光而朝向檢查對象區域照射之光相對於上述檢查對象區域之法線以80度±5度以內之入射角度照射之方式配置,且上述攝像部係以相對於上述檢查對象區域之法線以45度±5度以內之角度拍攝上述檢查對象區域之方式配置。 The substrate inspection apparatus according to claim 7, wherein the substrate to be inspected is a transparent glass substrate, and the substrate inspection device is configured to emit light directed toward the inspection target region by the polarization of the polarizing portion with respect to the inspection target region. The normal line is arranged to be irradiated at an incident angle of 80 degrees ± 5 degrees, and the imaging unit is disposed such that the inspection target region is imaged at an angle of 45 degrees ± 5 degrees with respect to a normal line of the inspection target region.
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