TW201622886A - Layered polishing pad and method for manufacturing same - Google Patents

Layered polishing pad and method for manufacturing same Download PDF

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TW201622886A
TW201622886A TW104131106A TW104131106A TW201622886A TW 201622886 A TW201622886 A TW 201622886A TW 104131106 A TW104131106 A TW 104131106A TW 104131106 A TW104131106 A TW 104131106A TW 201622886 A TW201622886 A TW 201622886A
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polishing
adhesive layer
laminated
layer
double
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Atsushi Kazuno
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Toyo Tire & Rubber Co
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Abstract

The purpose of the present invention is to provide a layered polishing pad capable of, in spite of a structure such that a back surface of a window (light-transmitting region) is adhered to double-side tape, performing accurate optical end point detection and such that the window is not readily peeled from the double-side tape, and a manufacturing method therefor. A method for manufacturing the layered polishing pad according to the present invention comprises: a step of fabricating an adhesive layered sheet by passing an un-adhered layered sheet comprising a polishing layer having a light-transmitting region in an opening portion A of a polishing region and a double-side tape having a hot melt adhesive layer on one side of a base material and a pressure-sensitive adhesive layer and mold-release sheet on the other side, the polishing layer and the double-side tape being layered such that the back surface of the polishing layer and the hot melt adhesive layer contact each other, between a pair of rolls of which the double-side tape side roll is a hot roll, thereby adhesively affixing the polishing region and the light-transmitting region to the hot melt adhesive layer of the double-side tape; and a step of peeling the mold-release sheet from the adhesive layered sheet and attaching a support layer having an opening portion B at a portion corresponding to the light-transmitting region to the exposed pressure-sensitive adhesive layer. A surface of the mold-release sheet that contacts the pressure-sensitive adhesive layer has an arithmetic mean roughness Ra of not more than 1 [mu]m.

Description

積層研磨墊及其製造方法 Laminated polishing pad and method of manufacturing same

本發明係關於一種利用化學機械研磨(Chemical Mechanical Polishing,CMP)使半導體晶圓等被研磨材表面之凹凸平坦化時所使用的積層研磨墊及其製造方法,詳細而言係關於一種具有用於利用光學手段偵測研磨狀況等之窗(光透過區域)的積層研磨墊及其製造方法。 The present invention relates to a laminated polishing pad used for planarizing a surface of a workpiece such as a semiconductor wafer by chemical mechanical polishing (CMP), and a method of manufacturing the same, and more particularly to A laminated polishing pad for detecting a window (light transmission region) such as a polishing condition by an optical means and a method of manufacturing the same.

製造半導體裝置時,要進行於半導體晶圓(以下,亦稱為晶圓)表面形成導電性膜並利用光刻、蝕刻等形成配線層之步驟、及於配線層上形成層間絕緣膜之步驟等,該等步驟會使晶圓表面產生包含金屬等導電體或絕緣體之凹凸。近年來,為了使半導體積體電路高密度化而進行了配線之微細化及多層配線化,隨之使晶圓表面之凹凸平坦化之技術變得重要。 When manufacturing a semiconductor device, a step of forming a conductive film on a surface of a semiconductor wafer (hereinafter also referred to as a wafer), forming a wiring layer by photolithography, etching, or the like, and a step of forming an interlayer insulating film on the wiring layer are performed. These steps cause the surface of the wafer to have irregularities including electrical conductors or insulators such as metals. In recent years, in order to increase the density of the semiconductor integrated circuit and to make the wiring finer and the multilayer wiring, it is important to flatten the unevenness on the surface of the wafer.

作為使晶圓表面之凹凸平坦化之方法,通常採用CMP法。CMP為如下技術:在將晶圓之被研磨面壓抵於研磨墊之研磨面之狀態下,使用分散有研磨粒之漿料狀研磨劑(以下稱為漿料)進行研磨。 As a method of flattening the unevenness on the surface of the wafer, a CMP method is generally employed. CMP is a technique in which a slurry-like abrasive (hereinafter referred to as a slurry) in which abrasive grains are dispersed is used for polishing while the surface to be polished of the wafer is pressed against the polishing surface of the polishing pad.

於進行此種CMP時有判定晶圓表面平坦度之問題。即,必須偵測到達所求表面特性或平面狀態之時間點。以往,關於氧化膜之膜厚及研磨速度等,係定期地處理測試晶圓,確認結果後對成為製品之晶圓進行研磨處理。 There is a problem in determining the flatness of the wafer surface when such CMP is performed. That is, it is necessary to detect the point in time at which the desired surface characteristic or planar state is reached. Conventionally, the test wafer is periodically processed about the film thickness and the polishing rate of the oxide film, and after confirming the result, the wafer to be processed is polished.

然而,該方法中會浪費處理測試晶圓之時間與成本,而且,預先完全未實施過加工之測試晶圓與製品晶圓會因CMP特有之負載效應而使研磨結果不同,若不實際加工製品晶圓則難以準確預料加工結果。 However, the time and cost of processing the test wafer are wasted in the method, and the test wafer and the product wafer which have not been processed beforehand may have different grinding results due to the CMP-specific load effect, if the product is not actually processed. Wafers are difficult to accurately predict processing results.

因此,最近為了消除上述問題點,期望有於CMP製程時可現場檢測獲得所求表面特性及厚度之時間點的方法。此種偵測採用有各種方法,就測定精度或非接觸測定之空間解析力而言,光學偵測手段係成為主流。 Therefore, recently, in order to eliminate the above problems, it is desirable to have a method in which the time characteristics of the obtained surface characteristics and thickness can be detected in the field during the CMP process. There are various methods for such detection, and optical detection means become the mainstream in terms of measurement accuracy or spatial resolution of non-contact measurement.

光學偵測手段為如下方法:具體而言係讓光束通過窗(光透過區域)穿過研磨墊而照射至晶圓,監測因其反射而產生之干涉信號,藉此偵測研磨終點。 The optical detecting means is a method of specifically irradiating a light beam through a window (light transmitting region) through a polishing pad to irradiate the wafer, and monitoring an interference signal generated by the reflection thereof, thereby detecting the polishing end point.

關於利用此種光學手段之研磨之終點偵測法中所使用的研磨墊係已提出有各種。今後,關於半導體製造之高積體化、超小型化,可預想積體電路之配線寬度會越來越小,因此需求可高精度地進行光學終點偵測之研磨墊。 Various types of polishing pads used in the end point detection method of polishing using such optical means have been proposed. In the future, as for the high integration and miniaturization of semiconductor manufacturing, it is expected that the wiring width of the integrated circuit will become smaller and smaller. Therefore, a polishing pad capable of performing optical end point detection with high precision is required.

例如專利文獻1中提出一種研磨墊,係用於實施半導體基材之化學機械平坦化,係包含:研磨墊本體,係具有形成於中央之開口部;及窗,係用於實施基材之現場光學測量且固定於前述開口部中;前述窗具有可接受入射至此之光之下表面,且前述下表面經過雷射剝蝕處理以去除存在於前述下表面之表面粗糙部。 For example, Patent Document 1 proposes a polishing pad for performing chemical mechanical planarization of a semiconductor substrate, comprising: a polishing pad body having an opening formed at a center; and a window for performing a substrate on the substrate Optically measured and fixed in the aforementioned opening portion; the window has a surface below which light can be incident, and the lower surface is subjected to a laser ablation treatment to remove surface roughness present on the lower surface.

另外,專利文獻2中提出一種化學機械研磨用墊,係具備研磨面與研磨面之相反面之非研磨面而成,且具有光學地自研磨面通到非研磨面之透光性區域,該透光性區域之非研磨面之表面粗度(Ra)為10μm以下,且前述透光性區域對於波長633nm之光之透過率為12%~70%。 Further, Patent Document 2 proposes a chemical mechanical polishing pad which is provided with a non-polishing surface having a polishing surface opposite to the polishing surface, and has a light-transmitting region that optically passes from the polishing surface to the non-polishing surface. The surface roughness (Ra) of the non-polishing surface of the light-transmitting region is 10 μm or less, and the transmittance of the light-transmitting region to light having a wavelength of 633 nm is 12% to 70%.

另外,專利文獻3中提出一種化學機械研磨用墊,係具備研磨面與前述研磨面之相反面之非研磨面,且具有光學地自研磨面通到非研磨面之透光性區域,前述透光性區域中之前述非研磨面之表面粗度(Ra)小於前述研磨面之表面粗度(Ra)。 Further, Patent Document 3 proposes a chemical mechanical polishing pad having a non-polishing surface having a polishing surface opposite to the polishing surface, and having a light-transmitting region that optically passes from the polishing surface to the non-polishing surface. The surface roughness (Ra) of the non-polishing surface in the optical region is smaller than the surface roughness (Ra) of the polishing surface.

另外,作為用於高精度研磨之研磨墊,通常使用聚胺基甲酸酯樹脂發泡體片。然而,聚胺基甲酸酯樹脂發泡體片雖局部平坦化能力優異,但緩衝性不足,故難以對晶圓整個面賦予均勻壓力。因此,通常於聚胺基甲酸酯樹脂發 泡體片之背面另外設置柔軟之緩衝層,而作為積層研磨墊用於研磨加工。 Further, as a polishing pad for high-precision polishing, a polyurethane resin foam sheet is usually used. However, the polyurethane foam sheet is excellent in local planarization ability, but the cushioning property is insufficient, so that it is difficult to apply uniform pressure to the entire surface of the wafer. Therefore, usually produced from polyurethane resin A soft buffer layer is additionally provided on the back surface of the bubble sheet, and is used as a laminated polishing pad for polishing processing.

然而,以往之積層研磨墊通常係將研磨層與緩衝層利用雙面膠帶貼合,但有如下問題:於研磨中漿料會滲入研磨層與緩衝層之間,而使雙面膠帶之耐久性下降,研磨層與緩衝層變得易剝離。尤其於研磨層具有窗時,有如下問題:漿料易自研磨層與窗之間隙滲入,而使窗易自雙面膠帶剝離。 However, in the conventional laminated polishing pad, the polishing layer and the buffer layer are usually bonded by a double-sided tape, but there is a problem in that the slurry penetrates between the polishing layer and the buffer layer during polishing, and the durability of the double-sided tape is made. As the film is lowered, the polishing layer and the buffer layer become easily peeled off. In particular, when the polishing layer has a window, there is a problem that the slurry easily penetrates from the gap between the polishing layer and the window, and the window is easily peeled off from the double-sided tape.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

專利文獻1:日本專利特開2007-049163號公報 Patent Document 1: Japanese Patent Laid-Open Publication No. 2007-049163

專利文獻2:日本專利特開2008-073845號公報 Patent Document 2: Japanese Patent Laid-Open Publication No. 2008-073845

專利文獻3:日本專利特開2008-226911號公報 Patent Document 3: Japanese Patent Laid-Open Publication No. 2008-226911

本發明之目的在於提供一種積層研磨墊及其製造方法,前述積層研磨墊雖具有窗(光透過區域)之背面接著於雙面膠帶之結構,但可高精度地進行光學終點偵測,且窗不易自雙面膠帶剝離。 An object of the present invention is to provide a laminated polishing pad having a structure in which a back surface of a window (light transmitting region) is followed by a double-sided tape, but the optical end point detection can be performed with high precision, and the manufacturing method thereof Not easy to peel off from double-sided tape.

本發明者們為解決前述課題而重複努力研究,結果發現藉由以下所示積層研磨墊及其製造方法可達成上述目的,從而完成本發明。 The present inventors have made intensive studies to solve the above problems, and as a result, have found that the above object can be attained by the laminated polishing pad and the method for producing the same as described below.

即,本發明係關於一種積層研磨墊之製造方法,係包括以下步驟:將於研磨區域之開口部A內具有光透過區域之研磨層、與於基材之單面具有熱熔接著劑層且於另一面具有感壓接著劑層及脫模片之雙面膠帶,以研磨層之背面與熱熔接著劑層相接之方式積層,使積層而成之未接著積層片通過雙面膠帶側之輥為熱輥之一對輥之間,而將研磨區域與光透過區域接著固定於雙面膠帶之熱熔接著劑層,而製作接著積層片之步驟;及自接著積層片剝離前述脫模片,且於露出之感壓接著劑層貼附支撐層之步驟,前述支撐層於對應前述光透過區域之部分具有開口部B;且前述脫模片之與感壓接著劑層相接之面之算術平均粗度Ra為1μm以下。 That is, the present invention relates to a method of manufacturing a laminated polishing pad comprising the steps of: providing an abrasive layer having a light-transmitting region in the opening A of the polishing region, and having a hot-melt adhesive layer on one side of the substrate; A double-sided tape having a pressure-sensitive adhesive layer and a release sheet on the other side is laminated so that the back surface of the polishing layer is in contact with the hot-melt adhesive layer, so that the laminated laminated sheet is not passed through the double-sided tape side. The roller is a pair of rollers between the heat roller, and the polishing region and the light transmission region are then fixed to the hot-melt adhesive layer of the double-sided tape to form a step of laminating the laminate; and the release sheet is peeled off from the subsequent laminate And the step of attaching the support layer to the exposed pressure-sensitive adhesive layer, wherein the support layer has an opening B at a portion corresponding to the light-transmitting region; and the surface of the release sheet that is in contact with the pressure-sensitive adhesive layer The arithmetic mean roughness Ra is 1 μm or less.

另外,本發明另關於一種積層研磨墊之製造方法,係包括以下步驟:將於研磨區域之開口部A內具有光透過區域之研磨層、與於基材之單面具有熱熔接著劑層且於另一面具有感壓接著劑層及脫模片之雙面膠帶,以研磨層之背面與熱熔接著劑層相接之方式積層,使積層而成之未接著積層片通過雙面膠帶側之輥為熱輥之一對輥之間,而將研磨區域與光透過區域接著固定於雙面膠帶之熱熔接著劑 層,而製作接著積層片之步驟;自接著積層片剝離前述脫模片,且於露出之感壓接著劑層中對應光透過區域之部分設置剝離性保護構件之步驟;於設置有剝離性保護構件之感壓接著劑層貼附支撐層之步驟;及去除對應光透過區域之部分之支撐層並進一步去除剝離性保護構件,而形成開口部B之步驟;且前述脫模片及前述剝離性保護構件之與感壓接著劑層相接之面之算術平均粗度Ra為1μm以下。 Further, the present invention relates to a method of manufacturing a laminated polishing pad comprising the steps of: providing an abrasive layer having a light-transmitting region in an opening portion A of the polishing region, and having a hot-melt adhesive layer on one side of the substrate; A double-sided tape having a pressure-sensitive adhesive layer and a release sheet on the other side is laminated so that the back surface of the polishing layer is in contact with the hot-melt adhesive layer, so that the laminated laminated sheet is not passed through the double-sided tape side. The roller is a hot-melt adhesive between one of the rollers of the heat roller and the polishing region and the light transmission region are then fixed to the double-sided tape. a step of forming a subsequent laminated sheet; peeling off the release sheet from the subsequent laminated sheet, and providing a peeling protective member in a portion of the exposed pressure-sensitive adhesive layer corresponding to the light-transmitting region; and providing peeling protection a step of attaching the support layer to the pressure-sensitive adhesive layer of the member; and removing the support layer corresponding to the portion of the light-transmitting region and further removing the peeling protective member to form the opening portion B; and the release sheet and the peeling property The arithmetic mean roughness Ra of the surface of the protective member that is in contact with the pressure-sensitive adhesive layer is 1 μm or less.

與光透過區域之背面露出之研磨墊相比,具有光透過區域之背面接著於雙面膠帶之結構之研磨墊係有光學終點偵測精度非常低之問題。本發明者認為其原因在於,在光束入射至光透過區域之前,因設於光透過區域之背面之雙面膠帶之接著劑層而光束被吸收或發生光散射。然後,本發明者重複進行努力研究,結果發現藉由如上述般使用與感壓接著劑層相接之面之算術平均粗度Ra為1μm以下的脫模片及剝離性保護構件,可將該表面粗度轉印至感壓接著劑層之表面,使感壓接著劑層之表面之算術平均粗度Ra成為1μm以下,藉此,於感壓接著劑層之表面中光束之光散射被抑制,可高精度地進行光學終點偵測。 Compared with the polishing pad exposed on the back side of the light transmission region, the polishing pad having the back surface of the light transmission region and the structure of the double-sided tape has a problem that the optical end point detection accuracy is extremely low. The inventors believe that the reason is that the light beam is absorbed or light-scattered due to the adhesive layer of the double-sided tape provided on the back surface of the light-transmitting region before the light beam enters the light-transmitting region. Then, the present inventors have conducted an intensive study and found that the release sheet and the releasable protective member having an arithmetic mean roughness Ra of 1 μm or less on the surface in contact with the pressure-sensitive adhesive layer as described above can be used. The surface roughness is transferred to the surface of the pressure-sensitive adhesive layer so that the arithmetic mean roughness Ra of the surface of the pressure-sensitive adhesive layer becomes 1 μm or less, whereby light scattering of the light beam in the surface of the pressure-sensitive adhesive layer is suppressed. Optical endpoint detection is performed with high precision.

另外,本發明之製造方法之特徵在於,使用在基材之單面具有熱熔接著劑層且於另一面具有感壓接著劑層及脫模片之雙面膠帶,並將研磨區域與光透過區域同時接著固定於熱熔接著劑層。若將研磨區域與光透過區域分別接著 固定於熱熔接著劑層,則因兩次熱歷程而導致熱熔接著劑之接著特性下降,於研磨區域或光透過區域與熱熔接著劑層之間變得易剝離。如上述,施加於熱熔接著劑層之熱必須設為一次,因此於基材之另一面側設置感壓接著劑層,並於前述感壓接著劑層壓接固定支撐層。 Further, the manufacturing method of the present invention is characterized in that a double-sided tape having a hot-melt adhesive layer on one side of a substrate and a pressure-sensitive adhesive layer and a release sheet on the other side is used, and the polishing region and the light are transmitted. The regions are then fixed to the hot melt adhesive layer at the same time. If the polishing area and the light transmission area are respectively followed When it is fixed to the hot-melt adhesive layer, the subsequent properties of the hot-melt adhesive are degraded due to the two thermal processes, and the peeling is facilitated between the polishing region or the light-transmitting region and the hot-melt adhesive layer. As described above, since the heat applied to the hot-melt adhesive layer must be set once, a pressure-sensitive adhesive layer is provided on the other surface side of the substrate, and the support layer is laminated and fixed to the pressure-sensitive adhesive.

研磨層側之輥較佳為23℃之ASKER-A硬度為20度~65度。藉此,即便於假設在研磨區域與光透過區域之間存在少許表面高度差時,亦可使輥追隨區域間之階差,因此可使研磨區域及光透過區域牢固地接著於熱熔接著劑層。於ASKER-A硬度未達20度時,輥過於柔軟,因此有壓入壓力分散而變弱,接著變得不充分之傾向。另一方面,於ASKER-A硬度超過65度時,難以使輥追隨於區域間之階差,因此有研磨區域與光透過區域之界面部分之接著變得不充分的傾向。 The roller on the side of the polishing layer preferably has an Asker-A hardness of 20 to 65 degrees at 23 °C. Therefore, even if it is assumed that there is a slight difference in surface height between the polishing region and the light-transmitting region, the step of the roller can be followed by the step, so that the polishing region and the light-transmitting region can be firmly adhered to the hot-melt adhesive. Floor. When the ASKER-A hardness is less than 20 degrees, the roll is too soft, so that the press-in pressure is dispersed and weakened, and then the tendency is insufficient. On the other hand, when the ASKER-A hardness exceeds 65 degrees, it is difficult to cause the roller to follow the step difference between the regions, and thus the interface portion between the polishing region and the light transmission region tends to be insufficient.

雙面膠帶側之輥較佳為表面之算術平均粗度Ra為15μm以下。於算術平均粗度Ra超過15μm時,輥之表面粗度轉印至雙面膠帶之感壓接著劑層之表面,而容易於感壓接著劑層之表面引起光束之光散射,因此有光學終點偵測精度下降之傾向。 The roller on the side of the double-sided tape preferably has an arithmetic mean roughness Ra of the surface of 15 μm or less. When the arithmetic mean roughness Ra exceeds 15 μm, the surface roughness of the roller is transferred to the surface of the pressure-sensitive adhesive layer of the double-sided tape, and the surface of the pressure-sensitive adhesive layer is liable to cause light scattering of the light beam, thereby having an optical end point. The tendency to detect degradation is reduced.

另外,未接著積層片中之研磨區域與光透過區域之表面高度差較佳為100μm以下。若表面高度差超過100μm, 則難以使輥追隨於區域間之階差,輥之壓入壓力難以施加於表面高度低之區域之端部,因此有難以使該端部牢固地接著於熱熔接著劑層之傾向。 Further, the difference in height between the polished region and the light-transmitting region in the laminated sheet is preferably 100 μm or less. If the surface height difference exceeds 100 μm, It is difficult to make the roller follow the step difference between the regions, and it is difficult to apply the pressing pressure of the roller to the end portion of the region having a low surface height. Therefore, it is difficult to firmly adhere the end portion to the hot-melt adhesive layer.

又,本發明係關於一種藉由前述製造方法而獲得之積層研磨墊、及包括使用前述積層研磨墊研磨半導體晶圓表面之步驟的半導體元件之製造方法。 Further, the present invention relates to a multilayer polishing pad obtained by the above-described manufacturing method, and a method of manufacturing a semiconductor device including the step of polishing a surface of a semiconductor wafer using the above-described multilayer polishing pad.

根據本發明之製造方法,可利用一次接著步驟使研磨區域與光透過區域牢固地接著於雙面膠帶之熱熔接著劑層,因此獲得研磨區域及光透過區域不易自雙面膠帶剝離之積層研磨墊。而且,本發明之積層研磨墊雖具有光透過區域之背面接著於雙面膠帶之結構,但由於雙面膠帶之感壓接著劑層之表面粗度非常小,不易於感壓接著劑層之表面引起光束之光散射,故可高精度地進行光學終點偵測。 According to the manufacturing method of the present invention, the polishing region and the light transmission region can be firmly adhered to the hot-melt adhesive layer of the double-sided tape in one subsequent step, thereby obtaining a layered polishing in which the polishing region and the light-transmitting region are not easily peeled off from the double-sided tape. pad. Further, the laminated polishing pad of the present invention has a structure in which the back surface of the light-transmitting region is followed by the double-sided tape, but since the surface of the pressure-sensitive adhesive layer of the double-sided tape has a very small surface roughness, it is not easy to sense the surface of the adhesive layer. The light beam is scattered, so that optical end point detection can be performed with high precision.

1‧‧‧積層研磨墊 1‧‧‧Laminated polishing pad

2‧‧‧研磨壓盤 2‧‧‧grinding platen

3‧‧‧研磨劑(漿料) 3‧‧‧Abrasive agent (slurry)

4‧‧‧被研磨材(半導體晶圓) 4‧‧‧Weared material (semiconductor wafer)

5‧‧‧支撐台(研磨頭) 5‧‧‧Support table (grinding head)

6、7‧‧‧旋轉軸 6, 7‧‧‧ rotating shaft

8‧‧‧研磨區域 8‧‧‧Abrasion area

9‧‧‧開口部A 9‧‧‧ Opening A

10‧‧‧光透過區域 10‧‧‧Light transmission area

11‧‧‧研磨層 11‧‧‧Abrasive layer

12‧‧‧基材 12‧‧‧Substrate

13‧‧‧熱熔接著劑層 13‧‧‧Hot melt adhesive layer

14‧‧‧感壓接著劑層 14‧‧‧ Pressure-sensitive adhesive layer

15‧‧‧脫模片 15‧‧‧ release film

16‧‧‧雙面膠帶 16‧‧‧Double-sided tape

17‧‧‧接著積層片 17‧‧‧Next layered film

18‧‧‧支撐層 18‧‧‧Support layer

19‧‧‧開口部B 19‧‧‧ Opening B

20‧‧‧感壓接著劑層之背面之開口部B部分 20‧‧‧ Opening part B of the back of the pressure-sensitive adhesive layer

21‧‧‧剝離性保護構件 21‧‧‧Removable protective members

圖1是表示CMP研磨所使用之研磨裝置之一例的概略構成圖。 FIG. 1 is a schematic configuration view showing an example of a polishing apparatus used for CMP polishing.

圖2是表示本發明之積層研磨墊之製造方法之一例的概略步驟圖。 Fig. 2 is a schematic process view showing an example of a method for producing a laminated polishing pad of the present invention.

圖3是表示本發明之積層研磨墊之製造方法之另一例的概略步驟圖。 Fig. 3 is a schematic process view showing another example of the method for producing the laminated polishing pad of the present invention.

一面參照圖2及圖3一面說明本發明之積層研磨墊之製造方法。 A method of manufacturing the laminated polishing pad of the present invention will be described with reference to Figs. 2 and 3 .

首先,於研磨區域8之開口部A9內設置光透過區域10而製作研磨層11。 First, the light-transmitting region 10 is provided in the opening A9 of the polishing region 8 to form the polishing layer 11.

研磨區域8可為發泡體,亦可為無發泡體,較佳為具有微細氣泡之發泡體。研磨區域之材料例如可列舉聚胺基甲酸酯樹脂、聚酯樹脂、聚醯胺樹脂、丙烯酸系樹脂、聚碳酸酯樹脂、鹵素系樹脂(聚氯乙烯、聚四氟乙烯、聚偏二氟乙烯等)、聚苯乙烯、烯烴系樹脂(聚乙烯、聚丙烯等)、環氧樹脂、感光性樹脂等之1種或2種以上之混合物。聚胺基甲酸酯樹脂由於耐磨耗性優異且可藉由對原料組成進行各種改變而容易獲得具有所需物性之聚合物,故係作為研磨區域之形成材料之尤佳材料。以下說明包含聚胺基甲酸酯樹脂發泡體之研磨區域。 The polishing region 8 may be a foam or a non-foamed body, and is preferably a foam having fine bubbles. Examples of the material of the polishing region include a polyurethane resin, a polyester resin, a polyamide resin, an acrylic resin, a polycarbonate resin, and a halogen resin (polyvinyl chloride, polytetrafluoroethylene, and polyvinylidene fluoride). One or a mixture of two or more of ethylene, etc., polystyrene, an olefin resin (such as polyethylene or polypropylene), an epoxy resin, and a photosensitive resin. The polyurethane resin is excellent as a material for forming a polishing region because it is excellent in abrasion resistance and can easily obtain a polymer having desired physical properties by various changes in the composition of the raw material. The polishing region including the polyurethane resin foam will be described below.

前述聚胺基甲酸酯樹脂包含異氰酸酯成分、多元醇成分(高分子量多元醇、低分子量多元醇)、及鏈延長劑。 The polyurethane resin contains an isocyanate component, a polyol component (high molecular weight polyol, a low molecular weight polyol), and a chain extender.

作為異氰酸酯成分可無特別限定地使用聚胺基甲酸酯領域中公知之化合物。異氰酸酯成分可列舉:2,4-甲苯二 異氰酸酯、2,6-甲苯二異氰酸酯、2,2'-二苯甲烷二異氰酸酯、2,4'-二苯甲烷二異氰酸酯、4,4'-二苯甲烷二異氰酸酯、1,5-萘二異氰酸酯、對苯二異氰酸酯、間苯二異氰酸酯、對二甲苯二異氰酸酯、間二甲苯二異氰酸酯等芳香族二異氰酸酯;伸乙基二異氰酸酯、2,2,4-三甲基六亞甲基二異氰酸酯、1,6-六亞甲基二異氰酸酯等脂肪族二異氰酸酯;1,4-環己烷二異氰酸酯、4,4'-二環己基甲烷二異氰酸酯、異佛爾酮二異氰酸酯、降莰烷二異氰酸酯等脂環式二異氰酸酯。該等既可使用1種,亦可混合2種以上。 As the isocyanate component, a compound known in the field of polyurethanes can be used without particular limitation. The isocyanate component can be exemplified by 2,4-toluene Isocyanate, 2,6-toluene diisocyanate, 2,2'-diphenylmethane diisocyanate, 2,4'-diphenylmethane diisocyanate, 4,4'-diphenylmethane diisocyanate, 1,5-naphthalene diisocyanate An aromatic diisocyanate such as p-phenylene diisocyanate, m-phenylene diisocyanate, p-xylene diisocyanate or m-xylene diisocyanate; ethyl diisocyanate, 2,2,4-trimethylhexamethylene diisocyanate, Aliphatic diisocyanate such as 1,6-hexamethylene diisocyanate; 1,4-cyclohexane diisocyanate, 4,4'-dicyclohexylmethane diisocyanate, isophorone diisocyanate, norbornane diisocyanate An alicyclic diisocyanate. These may be used alone or in combination of two or more.

作為高分子量多元醇,可列舉聚胺基甲酸酯之技術領域中通常所使用者。例如可列舉:聚四亞甲基醚二醇、聚乙二醇等為代表之聚醚多元醇、聚己二酸丁二酯為代表之聚酯多元醇、聚己內酯多元醇、聚己內酯之類的聚酯二醇與碳酸伸烷酯之反應物等所例示之聚酯聚碳酸酯多元醇、使碳酸伸乙酯與多元醇反應後將所得反應混合物與有機二羧酸反應而成的聚酯聚碳酸酯多元醇、藉由多價羥基化合物與碳酸芳基酯之酯交換反應而獲得之聚碳酸酯多元醇等。該等既可單獨使用,亦可併用2種以上。 Examples of the high molecular weight polyol include those generally used in the technical field of polyurethanes. For example, a polyether polyol represented by polytetramethylene ether glycol or polyethylene glycol, a polyester polyol represented by polybutylene adipate, a polycaprolactone polyol, and a polycap. a polyester polycarbonate polyol exemplified by a reactant of a polyester diol such as a lactone and a alkylene carbonate, reacting an ethyl carbonate with a polyol, and reacting the obtained reaction mixture with an organic dicarboxylic acid. A polyester polycarbonate polyol obtained by a transesterification reaction of a polyvalent hydroxy compound and an aryl carbonate, or the like. These may be used alone or in combination of two or more.

作為多元醇成分,可除上述高分子量多元醇以外,亦併用乙二醇、1,2-丙二醇、1,3-丙二醇、1,2-丁二醇、1,3-丁二醇、1,4-丁二醇、2,3-丁二醇、1,6-己二醇、新戊二醇、1,4-環己烷二甲醇、3-甲基-1,5-戊二醇、二乙二醇、三乙二 醇、1,4-雙(2-羥基乙氧基)苯、三羥甲基丙烷、丙三醇、1,2,6-己三醇、新戊四醇、四羥甲基環己烷、甲基葡糖苷、山梨糖醇、甘露醇、半乳糖醇、蔗糖、2,2,6,6-四(羥基甲基)環己醇、二乙醇胺、N-甲基二乙醇胺、及三乙醇胺等低分子量多元醇。而且,亦可併用乙二胺、甲苯二胺、二苯甲烷二胺、及二伸乙三胺等低分子量聚胺。另外,亦可併用單乙醇胺、2-(2-胺基乙基胺基)乙醇、及單丙醇胺等醇胺。該等低分子量多元醇、低分子量聚胺等可單獨使用1種,亦可併用2種以上。低分子量多元醇或低分子量聚胺等之調配量並無特別限定,可根據要製造之研磨墊(研磨層11)所要求特性而適當決定。 As the polyol component, in addition to the above high molecular weight polyol, ethylene glycol, 1,2-propylene glycol, 1,3-propanediol, 1,2-butanediol, 1,3-butanediol, 1, may be used in combination. 4-butanediol, 2,3-butanediol, 1,6-hexanediol, neopentyl glycol, 1,4-cyclohexanedimethanol, 3-methyl-1,5-pentanediol, Diethylene glycol, triethylene glycol Alcohol, 1,4-bis(2-hydroxyethoxy)benzene, trimethylolpropane, glycerol, 1,2,6-hexanetriol, pentaerythritol, tetramethylolcyclohexane, Methyl glucoside, sorbitol, mannitol, galactitol, sucrose, 2,2,6,6-tetrakis(hydroxymethyl)cyclohexanol, diethanolamine, N-methyldiethanolamine, and triethanolamine Low molecular weight polyol. Further, a low molecular weight polyamine such as ethylenediamine, toluenediamine, diphenylmethanediamine, or diethylenetriamine may be used in combination. Further, an alcoholamine such as monoethanolamine, 2-(2-aminoethylamino)ethanol or monopropanolamine may be used in combination. These low molecular weight polyols and low molecular weight polyamines may be used alone or in combination of two or more. The blending amount of the low molecular weight polyol or the low molecular weight polyamine or the like is not particularly limited, and can be appropriately determined depending on the characteristics required for the polishing pad (polishing layer 11) to be produced.

於利用預聚物法製造聚胺基甲酸酯樹脂發泡體時,預聚物之硬化係使用鏈延長劑。鏈延長劑係至少具有2個以上活性氫基之有機化合物,活性氫基可例示羥基、一級胺基或二級胺基、硫醇基(SH)等。具體而言可列舉:4,4'-亞甲基雙(鄰氯苯胺)(MOCA)、2,6-二氯-對苯二胺、4,4'-亞甲基雙(2,3-二氯苯胺)、3,5-雙(甲硫基)-2,4-甲苯二胺、3,5-雙(甲硫基)-2,6-甲苯二胺、3,5-二乙基甲苯-2,4-二胺、3,5-二乙基甲苯-2,6-二胺、三亞甲基二醇-二-對胺基苯甲酸酯、氧化四亞甲基-二-對胺基苯甲酸酯、4,4'-二胺基-3,3',5,5'-四乙基二苯甲烷、4,4'-二胺基-3,3'-二異丙基-5,5'-二甲基二苯甲烷、4,4'-二胺基-3,3',5,5'-四異丙基二苯甲烷、1,2-雙(2-胺基苯硫基)乙烷、4,4'-二胺基-3,3'-二 乙基-5,5'-二甲基二苯甲烷、N,N'-二-第二丁基-4,4'-二胺基二苯甲烷、3,3'-二乙基-4,4'-二胺基二苯甲烷、間二甲苯二胺、N,N'-二-第二丁基-對苯二胺、間苯二胺、及對二甲苯二胺等所例示之聚胺類、或上述低分子量多元醇、低分子量聚胺。該等可使用1種,亦可混合2種以上。 When the polyurethane resin foam is produced by the prepolymer method, the prepolymer is cured by using a chain extender. The chain extender is an organic compound having at least two active hydrogen groups, and the active hydrogen group may, for example, be a hydroxyl group, a primary or secondary amine group, a thiol group (SH) or the like. Specific examples thereof include 4,4'-methylenebis(o-chloroaniline) (MOCA), 2,6-dichloro-p-phenylenediamine, and 4,4'-methylenebis (2,3- Dichloroaniline), 3,5-bis(methylthio)-2,4-toluenediamine, 3,5-bis(methylthio)-2,6-toluenediamine, 3,5-diethyl Toluene-2,4-diamine, 3,5-diethyltoluene-2,6-diamine, trimethylene glycol-di-p-aminobenzoate, tetramethylene-di-pair Aminobenzoate, 4,4'-diamino-3,3',5,5'-tetraethyldiphenylmethane, 4,4'-diamino-3,3'-diisopropyl 5-,5'-dimethyldiphenylmethane, 4,4'-diamino-3,3',5,5'-tetraisopropyldiphenylmethane, 1,2-bis(2-amine Phenylthio)ethane, 4,4'-diamino-3,3'-di Ethyl-5,5'-dimethyldiphenylmethane, N,N'-di-t-butyl-4,4'-diaminodiphenylmethane, 3,3'-diethyl-4, 4'-Diaminodiphenylmethane, m-xylenediamine, N,N'-di-t-butyl-p-phenylenediamine, m-phenylenediamine, and p-xylenediamine Or a low molecular weight polyol, a low molecular weight polyamine as described above. These may be used alone or in combination of two or more.

聚胺基甲酸酯樹脂發泡體可應用熔融法、溶液法等公知之胺基甲酸酯化技術而製造,於考慮成本、作業環境等時,較佳為利用熔融法進行製造。 The polyurethane foam can be produced by a known urethanation technique such as a melt method or a solution method, and is preferably produced by a melt method in consideration of cost, work environment, and the like.

聚胺基甲酸酯樹脂發泡體之製造可利用預聚物法、單次法(one shot)之任一方法,但因所獲得之聚胺基甲酸酯樹脂之物理特性優異,故較佳為先由異氰酸酯成分與多元醇成分合成異氰酸酯基末端預聚物,再使其與鏈延長劑反應之預聚物法。 The polyurethane foam may be produced by any one of a prepolymer method or a one shot method, but since the obtained polyurethane resin has excellent physical properties, it is superior. A prepolymer method in which an isocyanate-based terminal prepolymer is synthesized from an isocyanate component and a polyol component, and then reacted with a chain extender.

作為聚胺基甲酸酯樹脂發泡體之製造方法,可列舉添加中空珠之方法、機械發泡法、化學發泡法等。 Examples of the method for producing the polyurethane foam include a method of adding hollow beads, a mechanical foaming method, a chemical foaming method, and the like.

尤佳為使用作為聚烷基矽氧烷與聚醚之共聚物的聚矽氧系界面活性劑之機械發泡法。 More preferably, it is a mechanical foaming method using a polyfluorene-based surfactant which is a copolymer of a polyalkyl siloxane and a polyether.

再者,亦可視需要添加抗氧化劑等穩定劑、潤滑劑、顏料、填充劑、抗靜電劑、其他添加劑。 Further, stabilizers such as antioxidants, lubricants, pigments, fillers, antistatic agents, and other additives may be added as needed.

聚胺基甲酸酯樹脂發泡體既可為獨立氣泡型,亦可為連續氣泡型。 The polyurethane foam may be either a closed cell type or a continuous cell type.

聚胺基甲酸酯樹脂發泡體之製造可為計量各成分投入至容器並進行攪拌之分批方式,另外亦可為於攪拌裝置連續供給各成分與非反應性氣體並進行攪拌,且送出氣泡分散液而製造成形品之連續生產方式。 The production of the polyurethane foam may be a batch method in which the components are charged into a container and stirred, and the components and the non-reactive gas may be continuously supplied to the stirring device, stirred, and sent out. A continuous production method for producing a molded article by using a bubble dispersion.

又可利用如下方法:將聚胺基甲酸酯樹脂發泡體之原料之預聚物加入反應容器,然後投入鏈延長劑並進行攪拌後,流入特定大小之模具中而製作塊狀體,且使用刨狀或帶鋸狀之切片機將該塊狀體切片,或者於前述流入模具中之階段製成薄片狀。另外,亦可將原料之樹脂熔化,並自T模擠出成形而直接獲得片狀之聚胺基甲酸酯樹脂發泡體。 Further, a method in which a prepolymer of a raw material of a polyurethane foam is added to a reaction container, and then a chain extender is added and stirred, and then poured into a mold of a specific size to form a lump, and The block is sliced using a planer or band saw-like microtome, or formed into a sheet shape at the stage of flowing into the mold. Further, the resin of the raw material may be melted and extruded from a T die to directly obtain a sheet-like polyurethane resin foam.

研磨區域8之與被研磨材接觸之研磨表面較佳為具有用於保持、更新漿料之凹凸結構。包含發泡體之研磨區域於研磨表面具有大量開口,而具有保持、更新漿料之作用,藉由在研磨表面形成凹凸結構,可更高效率地進行漿料之保持與更新,且可防止與被研磨材之吸附所引起之被研磨材之破壞。凹凸結構只要為保持、更新漿料之形狀則並無特別限定,例如可列舉XY格子槽、同心圓狀槽、貫通孔、 未貫通之孔、多邊柱、圓柱、螺旋狀槽、偏心圓狀槽、放射狀槽、及該等槽組合而成者。另外,該等凹凸結構通常具有規則性,但為了所求漿料之保持、更新性,亦可分別於某範圍改變槽間距、槽寬度、槽深度等。 The polishing surface of the polishing region 8 that is in contact with the material to be polished preferably has a textured structure for holding and renewing the slurry. The polishing region including the foam has a large number of openings on the polishing surface, and has the function of holding and renewing the slurry. By forming the uneven structure on the polishing surface, the slurry can be more efficiently maintained and renewed, and can be prevented from being Destruction of the material to be polished caused by the adsorption of the material to be polished. The uneven structure is not particularly limited as long as it retains and renews the shape of the slurry, and examples thereof include an XY lattice groove, a concentric circular groove, and a through hole. A hole that is not penetrated, a polygonal column, a cylinder, a spiral groove, an eccentric circular groove, a radial groove, and a combination of the grooves. Further, the uneven structures are generally regular, but the groove pitch, the groove width, the groove depth, and the like may be changed in a certain range in order to maintain and renew the slurry.

研磨區域8之形狀並無特別限制,既可為圓形狀,亦可為長條狀。研磨區域之大小可根據所使用之研磨裝置而適當調整,於圓形狀時,直徑為30cm~150cm左右,於長條狀時,長度為5m~15m左右,寬度為60cm~250cm左右。 The shape of the polishing region 8 is not particularly limited, and may be a circular shape or a long strip shape. The size of the polishing zone can be appropriately adjusted according to the polishing apparatus to be used. When the shape is round, the diameter is about 30 cm to 150 cm, and in the case of a long strip, the length is about 5 m to 15 m, and the width is about 60 cm to 250 cm.

研磨區域8之厚度並無特別限定,通常為0.8mm~4mm左右,較佳為1.2mm~2.5mm。 The thickness of the polishing region 8 is not particularly limited, but is usually about 0.8 mm to 4 mm, preferably 1.2 mm to 2.5 mm.

研磨區域8之ASKER-D硬度並無特別限制,較佳為40度~65度左右。 The ASKER-D hardness of the polishing region 8 is not particularly limited, but is preferably about 40 to 65 degrees.

於研磨區域8形成開口部A9之手段並無特別限制,例如可列舉:利用切削工具進行加壓或研削之方法、利用二氧化碳雷射等雷射之方法、將原料流入具備開口部A之形狀之模具且使其硬化而形成之方法等。再者,開口部A之大小並無特別限制。 The means for forming the opening A9 in the polishing region 8 is not particularly limited, and examples thereof include a method of pressurizing or grinding with a cutting tool, and a method of using a laser such as a carbon dioxide laser to flow a raw material into a shape having an opening A. A method of forming a mold and hardening it, and the like. Furthermore, the size of the opening A is not particularly limited.

開口部A9之平面形狀並無特別限制,例如可列舉圓 形、橢圓形、正方形、長方形、及多邊形等形狀。另外,開口部A之剖面形狀並無特別限制,為了容易於開口部A內暫時固定光透過區域,亦可設為從研磨表面側朝向研磨背面側變窄之形狀。 The planar shape of the opening A9 is not particularly limited, and for example, a circle can be cited. Shapes such as shapes, ovals, squares, rectangles, and polygons. In addition, the cross-sectional shape of the opening A is not particularly limited, and may be a shape that is narrowed from the polishing surface side toward the polishing back surface side in order to facilitate the temporary fixation of the light transmission region in the opening A.

光透過區域10之形成材料並無特別限制,較佳為使用在進行研磨狀態下可高精度地進行光學終點偵測,且於波長600nm~700nm之全範圍內光透過率為20%以上的材料,更佳為光透過率為40%以上之材料。作為此種材料,例如可列舉:聚胺基甲酸酯樹脂、聚酯樹脂、酚樹脂、脲樹脂、三聚氰胺樹脂、環氧樹脂、及丙烯酸系樹脂等熱硬化性樹脂;聚胺基甲酸酯樹脂、聚酯樹脂、聚醯胺樹脂、纖維素系樹脂、丙烯酸系樹脂、聚碳酸酯樹脂、鹵素系樹脂(聚氯乙烯、聚四氟乙烯、聚偏二氟乙烯等)、聚苯乙烯、及烯烴系樹脂(聚乙烯、聚丙烯等)等熱塑性樹脂;丁二烯橡膠或異戊二烯橡膠等橡膠;藉由紫外線或電子束等光會硬化之光硬化性樹脂及感光性樹脂等。該等樹脂既可單獨使用,亦可併用2種以上。 The material for forming the light-transmitting region 10 is not particularly limited, and it is preferable to use a material which can perform optical end point detection with high precision in a polished state and has a light transmittance of 20% or more over the entire wavelength range of 600 nm to 700 nm. More preferably, the material has a light transmittance of 40% or more. Examples of such a material include a thermosetting resin such as a polyurethane resin, a polyester resin, a phenol resin, a urea resin, a melamine resin, an epoxy resin, and an acrylic resin; and a polyurethane Resin, polyester resin, polyamide resin, cellulose resin, acrylic resin, polycarbonate resin, halogen resin (polyvinyl chloride, polytetrafluoroethylene, polyvinylidene fluoride, etc.), polystyrene, And a thermoplastic resin such as an olefin resin (such as polyethylene or polypropylene); a rubber such as butadiene rubber or isoprene rubber; a photocurable resin which is cured by light such as ultraviolet rays or electron beams, and a photosensitive resin. These resins may be used singly or in combination of two or more.

用於光透過區域10之材料較佳為研削性與用於研磨區域之材料相同或較大。尤佳為可抑制研磨中之修整痕所引起光透過區域之光散射的耐磨耗性高之聚胺基甲酸酯樹脂。 The material for the light-transmitting region 10 is preferably of the same or larger grinding property as the material used for the polishing region. More preferably, it is a highly urethane resin which can suppress light scattering in the light-transmitting region caused by the trimming marks in the polishing.

光透過區域10之製作方法並無特別限制,可利用公知方法而製作。例如可採用:使用帶鋸方式或刨方式之切片機使聚胺基甲酸酯樹脂之塊狀體成為特定厚度之方法、將樹脂流入具有特定厚度之模腔之模具中並使其硬化之方法、或者使用塗佈技術或片成形技術之方法等。 The method of producing the light-transmitting region 10 is not particularly limited, and can be produced by a known method. For example, a method of using a band saw or a planer to make a block of a polyurethane resin into a specific thickness, a method of flowing a resin into a mold having a cavity of a specific thickness, and hardening the same can be employed. Or a method using a coating technique or a sheet forming technique, or the like.

光透過區域10之大小並無特別限制,較佳為與研磨區域8之開口部A9同樣之大小或較開口部A9稍小。光透過區域之平面形狀較佳為設為與開口部A同樣之形狀。光透過區域之剖面形狀較佳為設為與開口部A同樣之形狀,另外,為了容易於開口部A內暫時固定光透過區域,亦可設為從研磨表面側朝向研磨背面側變窄之形狀。 The size of the light transmission region 10 is not particularly limited, and is preferably the same size as the opening A9 of the polishing region 8 or slightly smaller than the opening A9. The planar shape of the light transmission region is preferably the same shape as that of the opening A. The cross-sectional shape of the light-transmitting region is preferably the same as that of the opening A. Further, in order to easily fix the light-transmitting region in the opening A, the shape may be narrowed from the polishing surface side toward the polishing back side. .

光透過區域10之厚度並無特別限制,可為與研磨區域之厚度相同之厚度,亦可為研磨區域之厚度以上,且亦可為研磨區域之厚度以下。但,於光透過區域過度厚於研磨區域時,有研磨中因突出部分對被研磨材造成傷痕之虞。而且,光透過區域會因研磨時所施加之應力而變形,會使光學上大幅改變,因此有研磨之光學終點偵測精度下降之虞。 The thickness of the light-transmitting region 10 is not particularly limited, and may be the same thickness as the thickness of the polishing region, or may be equal to or greater than the thickness of the polishing region, or may be equal to or less than the thickness of the polishing region. However, when the light transmission region is excessively thicker than the polishing region, there is a flaw in the polishing due to the protruding portion on the material to be polished. Further, the light-transmitting region is deformed by the stress applied during polishing, and the optical property is largely changed. Therefore, the accuracy of the optical end point detection of the polishing is lowered.

光透過區域10之ASKER-D硬度並無特別限制,較佳為60度~80度左右。 The ASKER-D hardness of the light transmitting region 10 is not particularly limited, and is preferably about 60 to 80 degrees.

於開口部A9內設置光透過區域10之方法並無特別限制,例如可列舉:(1)於開口部A9內嵌入光透過區域10之方法;(2)於開口部A9內插入光透過區域10,且利用再剝離性黏著帶貼合研磨區域8表面與光透過區域10表面之方法;(3)將開口部A9及光透過區域10之形狀設為從研磨表面側朝向研磨背面側變窄之形狀,且於開口部A9內插入光透過區域10之方法等。 The method of providing the light-transmitting region 10 in the opening A9 is not particularly limited, and examples thereof include (1) a method of embedding the light-transmitting region 10 in the opening A9; and (2) inserting the light-transmitting region 10 into the opening A9. And the method of bonding the surface of the polishing region 8 and the surface of the light-transmitting region 10 by a re-peelable adhesive tape; (3) the shape of the opening A9 and the light-transmitting region 10 is narrowed from the polishing surface side toward the polishing back surface side. A method of inserting the light-transmitting region 10 into the opening A9 and the like.

於開口部A9內設置光透過區域10時之研磨區域與光透過區域之表面高度差較佳為100μm以下,更佳為50μm以下。 The difference in height between the polishing region and the light-transmitting region when the light-transmitting region 10 is provided in the opening A9 is preferably 100 μm or less, and more preferably 50 μm or less.

之後,將研磨層11、與於基材12之單面具有熱熔接著劑層13且於另一面具有感壓接著劑層14及脫模片15的雙面膠帶16,以研磨層11之背面與熱熔接著劑層13相接之方式積層,而製作未接著積層片。然後,使未接著積層片通過雙面膠帶16側之輥為熱輥之一對輥之間,而將研磨區域8與光透過區域10接著固定於雙面膠帶16之熱熔接著劑層13,而製作接著積層片17。 Thereafter, the polishing layer 11 and the double-sided tape 16 having the heat-fusible adhesive layer 13 on one side of the substrate 12 and the pressure-sensitive adhesive layer 14 and the release sheet 15 on the other surface are used as the back surface of the polishing layer 11. A layer is laminated in contact with the hot-melt adhesive layer 13, and a laminated sheet is not formed. Then, the roll that has not passed through the double-sided tape 16 is placed between the pair of rolls, and the polishing area 8 and the light-transmitting area 10 are then fixed to the hot-melt adhesive layer 13 of the double-sided tape 16 . Then, the laminated sheet 17 is produced.

基材12例如可列舉:聚對苯二甲酸乙二酯膜及聚萘二甲酸乙二酯膜等聚酯膜;聚乙烯膜及聚丙烯膜等聚烯烴膜;尼龍膜等。該等中較佳為使用耐熱性優異且防止水透過性質優異之聚酯膜。 Examples of the substrate 12 include polyester films such as polyethylene terephthalate film and polyethylene naphthalate film; polyolefin films such as polyethylene film and polypropylene film; and nylon films. Among these, it is preferred to use a polyester film which is excellent in heat resistance and excellent in water permeation resistance.

亦可對基材12之表面實施電暈處理、電漿處理等易接著處理。 The surface of the substrate 12 may be subjected to an easy subsequent treatment such as corona treatment or plasma treatment.

基材12之厚度並無特別限制,就透明性、柔軟性及剛性等觀點而言較佳為10μm~180μm。 The thickness of the substrate 12 is not particularly limited, and is preferably from 10 μm to 180 μm from the viewpoints of transparency, flexibility, rigidity, and the like.

熱熔接著劑層13及感壓接著劑層14之厚度並無特別限制,較佳為10μm~200μm,更佳為25μm~125μm。 The thickness of the hot-melt adhesive layer 13 and the pressure-sensitive adhesive layer 14 is not particularly limited, but is preferably 10 μm to 200 μm, and more preferably 25 μm to 125 μm.

作為熱熔接著劑層13之原料之熱熔接著劑可無特別限制地使用公知者,較佳為使用丙烯酸系熱熔接著劑、聚酯系熱熔接著劑、或包含丙烯腈與丁二烯之共聚物之NBR(Nitrile Butadiene Rubber,丁腈橡膠)系熱熔接著劑。 The hot-melt adhesive which is a raw material of the hot-melt adhesive layer 13 can be used without any particular limitation, and is preferably an acrylic hot melt adhesive, a polyester hot melt adhesive, or an acrylonitrile and butadiene. The NBR (Nitrile Butadiene Rubber) is a hot melt adhesive.

聚酯系熱熔接著劑較佳為至少含有基底聚合物之聚酯樹脂、及交聯成分之於1分子中具有2個以上縮水甘油基之環氧樹脂。 The polyester-based hot-melt adhesive is preferably an epoxy resin containing at least a base polymer and an epoxy resin having two or more glycidyl groups in one molecule of a crosslinking component.

聚酯系熱熔接著劑亦可含有烯烴系樹脂等軟化劑、黏著賦予劑、填充劑、穩定劑、及偶合劑等公知添加劑。而且,亦可含有滑石等公知無機填料。 The polyester-based hot-melt adhesive may contain a known additive such as a softener such as an olefin resin, an adhesion-imparting agent, a filler, a stabilizer, and a coupling agent. Further, a known inorganic filler such as talc may be contained.

聚酯系熱熔接著劑係利用任意之方法至少混合前述聚 酯樹脂及前述環氧樹脂等而調製。例如利用單軸擠出機、咬合形同方向平行軸雙軸擠出機、咬合形不同方向平行軸雙軸擠出機、咬合形不同方向斜軸雙軸擠出機、非咬合形雙軸擠出機、不完全咬合形雙軸擠出機、雙向捏合機形擠出機、行星齒輪形擠出機、轉移混合擠出機、柱塞式擠出機、輥式擠出機等擠出成形機或捏合機等混合各原料而調製。 The polyester-based hot melt adhesive is at least mixed with the aforementioned poly by any method It is prepared by an ester resin, the above epoxy resin, or the like. For example, using a single-axis extruder, a bite-shaped parallel shaft biaxial extruder in the same direction, a parallel shaft biaxial extruder with different orientations, a biaxial extruder with different orientations, and a non-bite-type biaxial extrusion Extrusion forming, such as out-of-machine, incompletely occlusal twin-screw extruder, two-way kneading extruder, planetary gear extruder, transfer mixing extruder, ram extruder, and roll extruder The raw materials are mixed by a machine or a kneader.

聚酯系熱熔接著劑之熔點較佳為80℃~200℃,更佳為100℃~130℃。 The melting point of the polyester-based hot-melt adhesive is preferably from 80 ° C to 200 ° C, more preferably from 100 ° C to 130 ° C.

另外,聚酯系熱熔接著劑之比重較佳為1.1~1.3。 Further, the specific gravity of the polyester-based hot-melt adhesive is preferably from 1.1 to 1.3.

另外,聚酯系熱熔接著劑之熔融流動指數(MI)較佳為於150℃、負荷為2.16kg之條件下為16g/10min~26g/10min。 Further, the melt flow index (MI) of the polyester-based hot melt adhesive is preferably 16 g/10 min to 26 g/10 min at 150 ° C and a load of 2.16 kg.

感壓接著劑層14之原料可無特別限制地使用公知者,例如可列舉:橡膠系接著劑、丙烯酸系接著劑、胺基甲酸酯系接著劑、酯系接著劑、及EVA(Ethylene Vinyl Acetate,乙烯/乙酸乙烯酯)系接著劑等。 The raw material of the pressure-sensitive adhesive layer 14 can be used without any particular limitation, and examples thereof include a rubber-based adhesive, an acrylic adhesive, a urethane-based adhesive, an ester-based adhesive, and EVA (Ethylene Vinyl). Acetate, ethylene/vinyl acetate), and the like.

用於雙面膠帶的一般之脫模片之表面之算術平均粗度Ra為2μm~3μm左右,但於本發明中使用與感壓接著劑 層14相接之面之算術平均粗度Ra為1μm以下的脫模片15。脫模片15之與感壓接著劑層14相接之面之算術平均粗度Ra較佳為0.5μm以下,更佳為0.2μm以下,又更佳為0.1μm以下。 The arithmetic mean roughness Ra of the surface of a general release sheet for a double-sided tape is about 2 μm to 3 μm, but is used in the present invention with a pressure-sensitive adhesive. The release sheet 15 having an arithmetic mean roughness Ra of 1 μm or less on the surface where the layers 14 are in contact with each other. The arithmetic mean roughness Ra of the surface of the release sheet 15 that is in contact with the pressure-sensitive adhesive layer 14 is preferably 0.5 μm or less, more preferably 0.2 μm or less, still more preferably 0.1 μm or less.

作為表面之算術平均粗度Ra為1μm以下之脫模片15,例如可列舉:聚對苯二甲酸乙二酯膜及聚萘二甲酸乙二酯膜等聚酯膜;聚乙烯膜及聚丙烯膜等聚烯烴膜;尼龍膜;聚醯亞胺膜等。 Examples of the release sheet 15 having an arithmetic mean roughness Ra of the surface of 1 μm or less include a polyester film such as a polyethylene terephthalate film or a polyethylene naphthalate film; a polyethylene film and polypropylene; A polyolefin film such as a film; a nylon film; a polyimide film.

為了使熱熔接著劑層13熔融或軟化,雙面膠帶側之輥使用熱輥。研磨層側之輥可為熱輥,亦可為非熱輥。 In order to melt or soften the hot-melt adhesive layer 13, the roll on the double-sided tape side uses a heat roll. The roller on the side of the polishing layer may be a heat roller or a non-heat roller.

研磨層側之輥於23℃之ASKER-A硬度較佳為20度~65度,更佳為40度~55度。 The ASKER-A hardness of the roller on the side of the polishing layer at 23 ° C is preferably from 20 to 65 degrees, more preferably from 40 to 55 degrees.

雙面膠帶側之輥之表面之算術平均粗度Ra較佳為15μm以下,更佳為5μm以下。 The arithmetic mean roughness Ra of the surface of the roll on the double-sided tape side is preferably 15 μm or less, more preferably 5 μm or less.

輥間間隙較佳為較未接著積層片之厚度小300μm~1500μm,更佳為小700μm~1300μm。 The gap between the rolls is preferably 300 μm to 1500 μm smaller than the thickness of the laminated sheet, and more preferably 700 μm to 1300 μm.

於圖2所示之本發明之積層研磨墊之製造方法中,繼上述之後從接著積層片17剝離脫模片15,於露出之感壓 接著劑層14貼附支撐層18而製作積層研磨墊1,前述支撐層18於對應光透過區域9之部分具有開口部B19。 In the method for producing a laminated polishing pad of the present invention shown in FIG. 2, the release sheet 15 is peeled off from the subsequent laminated sheet 17 after the above, and the pressure is exposed. The support layer 18 is attached to the adhesive layer 18 to form a laminated polishing pad 1, and the support layer 18 has an opening B19 at a portion corresponding to the light-transmitting region 9.

支撐層18係補充研磨區域之特性。支撐層可使用彈性模數較研磨區域低之層(緩衝層),亦可使用彈性模數較研磨區域高之層(高彈性層)。緩衝層係為了於CMP中兼具折中關係之平面性與均勻性兩者所必需。所謂平面性係指研磨有圖案形成時產生之微小凹凸之被研磨材時之圖案部之平坦性,所謂均勻性係指被研磨材整體之均一性。利用研磨區域之特性來改善平面性,利用緩衝層之特性來改善均勻性。在CMP中為了抑制刮痕產生而使用柔軟研磨區域時,高彈性層係用以提升研磨墊之平坦化特性。而且,藉由使用高彈性層,可抑制被研磨材之邊緣部之過度磨削。 The support layer 18 complements the characteristics of the abrasive region. As the support layer, a layer having a lower modulus of elasticity than the polishing region (buffer layer) may be used, or a layer having a higher modulus of elasticity than the region to be polished (highly elastic layer) may be used. The buffer layer is necessary for both planarity and uniformity of the compromise relationship in CMP. The term "planarity" refers to the flatness of the pattern portion when the material to be polished having fine irregularities generated during pattern formation is polished, and the uniformity refers to the uniformity of the entire material to be polished. The properties of the abrasive region are utilized to improve planarity, and the characteristics of the buffer layer are utilized to improve uniformity. When a soft abrasive region is used in order to suppress scratch generation in CMP, a high elastic layer is used to enhance the planarization characteristics of the polishing pad. Moreover, by using a highly elastic layer, excessive grinding of the edge portion of the material to be polished can be suppressed.

緩衝層例如可列舉:聚酯不織布、尼龍不織布、及丙烯酸系不織布等纖維不織布;含浸聚胺基甲酸酯之聚酯不織布之類的含浸樹脂之不織布;聚胺基甲酸酯泡沫及聚乙烯泡沫等高分子樹脂發泡體;丁二烯橡膠及異戊二烯橡膠等橡膠性樹脂;感光性樹脂等。 Examples of the buffer layer include a nonwoven fabric such as a polyester nonwoven fabric, a nylon nonwoven fabric, and an acrylic nonwoven fabric; a non-woven resin impregnated with a polyester nonwoven fabric impregnated with a polyurethane; a polyurethane foam and a polyethylene; A polymer resin foam such as foam; a rubber resin such as butadiene rubber or isoprene rubber; a photosensitive resin.

緩衝層之厚度並無特別限制,較佳為300μm~1800μm,更佳為700μm~1400μm。 The thickness of the buffer layer is not particularly limited, but is preferably from 300 μm to 1800 μm, more preferably from 700 μm to 1400 μm.

高彈性層例如可列舉金屬片、樹脂膜等。樹脂膜例如 可列舉:聚對苯二甲酸乙二酯膜及聚萘二甲酸乙二酯膜等聚酯膜;聚乙烯膜及聚丙烯膜等聚烯烴膜;尼龍膜;聚醯亞胺膜等。 Examples of the high elastic layer include a metal sheet, a resin film, and the like. Resin film such as Examples thereof include polyester films such as polyethylene terephthalate film and polyethylene naphthalate film; polyolefin films such as polyethylene film and polypropylene film; nylon film; and polyimine film.

高彈性層較佳為使用在150℃加熱30分鐘後與加熱前之尺寸變化率為1.2%以下之樹脂膜。更佳為尺寸變化率為0.8%以下之樹脂膜,尤佳為尺寸變化率為0.4%以下之樹脂膜。作為此種特性之樹脂膜,例如可列舉經實施熱收縮處理之聚對苯二甲酸乙二酯膜、聚萘二甲酸乙二酯膜、及聚醯亞胺膜等。 The high elastic layer is preferably a resin film which has a dimensional change ratio of 1.2% or less after heating at 150 ° C for 30 minutes and before heating. More preferably, the resin film having a dimensional change ratio of 0.8% or less is preferably a resin film having a dimensional change ratio of 0.4% or less. Examples of the resin film having such characteristics include a polyethylene terephthalate film subjected to heat shrinkage treatment, a polyethylene naphthalate film, and a polyimide film.

高彈性層之厚度並無特別限制,就剛性及加熱時之尺寸穩定性等觀點而言,較佳為10μm~200μm,更佳為15μm~55μm。 The thickness of the high elastic layer is not particularly limited, and is preferably from 10 μm to 200 μm, more preferably from 15 μm to 55 μm, from the viewpoints of rigidity and dimensional stability upon heating.

開口部B19係為了使光透過而設置。開口部B19可為與開口部A9相同之大小,亦可小於開口部A9,或者亦可大於開口部A9。 The opening B19 is provided to transmit light. The opening B19 may be the same size as the opening A9, may be smaller than the opening A9, or may be larger than the opening A9.

感壓接著劑層14之背面之開口部B部分20的算術平均粗度Ra為1μm以下,較佳為0.5μm以下,更佳為0.2μm以下,又更佳為0.1μm以下。 The arithmetic mean roughness Ra of the opening portion B portion 20 on the back surface of the pressure-sensitive adhesive layer 14 is 1 μm or less, preferably 0.5 μm or less, more preferably 0.2 μm or less, and still more preferably 0.1 μm or less.

另外,亦可於支撐層18之單面設置用於將積層研磨墊 貼附於研磨壓盤之黏著構件(例如黏著劑層、雙面膠帶等)。 In addition, a single layer of the support layer 18 may be provided for laminating the polishing pad. An adhesive member (for example, an adhesive layer, a double-sided tape, or the like) attached to the polishing platen.

另一方面,於圖3所示之本發明之積層研磨墊之製造方法中,繼上述之後從接著積層片17剝離脫模片15,於露出之感壓接著劑層14之對應光透過區域10之部分設置剝離性保護構件21。 On the other hand, in the manufacturing method of the laminated polishing pad of the present invention shown in FIG. 3, the release sheet 15 is peeled off from the subsequent laminated sheet 17 after the above, and the corresponding light-transmitting region 10 of the exposed pressure-sensitive adhesive layer 14 is exposed. The peeling protection member 21 is provided in part.

剝離性保護構件21覆蓋感壓接著劑層14之對應光透過區域10之部分,且與感壓接著劑層14相接之面之算術平均粗度Ra為1μm以下。與感壓接著劑層14相接之面之算術平均粗度Ra較佳為0.5μm以下,更佳為0.2μm以下,又更佳為0.1μm以下。 The peelable protective member 21 covers a portion of the pressure-sensitive adhesive layer 14 corresponding to the light-transmitting region 10, and the arithmetic average roughness Ra of the surface in contact with the pressure-sensitive adhesive layer 14 is 1 μm or less. The arithmetic mean roughness Ra of the surface in contact with the pressure-sensitive adhesive layer 14 is preferably 0.5 μm or less, more preferably 0.2 μm or less, still more preferably 0.1 μm or less.

作為剝離性保護構件21,較佳為使用具有耐熱性及剝離性之樹脂片(例如氟樹脂片、聚矽氧樹脂片、經脫模處理之聚酯膜、及將該等積層而成之片等)。 As the peelable protective member 21, it is preferable to use a resin sheet having heat resistance and releasability (for example, a fluororesin sheet, a polyoxymethylene resin sheet, a release-treated polyester film, and a laminate of the layers) Wait).

剝離性保護構件21之大小並無特別限制,較佳為與光透過區域10相同之大小或小於光透過區域10。 The size of the peelable protective member 21 is not particularly limited, and is preferably the same size as or smaller than the light transmitting region 10.

剝離性保護構件21之厚度較佳為150μm以下。若厚度超過150μm,則於後續步驟中將支撐層18貼附於感壓接著劑層14時,於剝離性保護構件21之邊緣部分會產生 階差(空間),該部分之感壓接著劑層14與支撐層18之密接性會下降。 The thickness of the peelable protective member 21 is preferably 150 μm or less. If the thickness exceeds 150 μm, when the support layer 18 is attached to the pressure-sensitive adhesive layer 14 in the subsequent step, the edge portion of the peelable protective member 21 is generated. The step (space), the adhesion of the portion of the pressure-sensitive adhesive layer 14 to the support layer 18 is lowered.

之後,將支撐層18貼附於設置有剝離性保護構件21之感壓接著劑層14。 Thereafter, the support layer 18 is attached to the pressure-sensitive adhesive layer 14 provided with the peelable protective member 21.

另外,亦可於支撐層18之單面設置用於將積層研磨墊貼附於研磨壓盤之黏著構件(例如黏著劑層、雙面膠帶等)。 Further, an adhesive member (for example, an adhesive layer, a double-sided tape, or the like) for attaching the laminated polishing pad to the polishing platen may be provided on one side of the support layer 18.

之後,去除對應光透過區域10之部分之支撐層18,進一步去除剝離性保護構件21,而形成用於使光透過之開口部B19,而製作積層研磨墊1。於設置有黏著構件時,亦去除對應光透過區域10之部分之黏著構件。 Thereafter, the support layer 18 corresponding to the portion of the light-transmitting region 10 is removed, and the peeling protective member 21 is further removed to form an opening portion B19 through which light is transmitted, thereby producing a laminated polishing pad 1. When the adhesive member is provided, the adhesive member corresponding to the portion of the light-transmitting region 10 is also removed.

去除支撐層18(及黏著構件)之方法並無特別限制,例如可列舉:使用刀具等進行切斷去除之方法、利用雷射加工進行去除之方法等。 The method of removing the support layer 18 (and the adhesive member) is not particularly limited, and examples thereof include a method of cutting and removing using a cutter or the like, and a method of removing by laser processing.

本發明之製造方法中,使用剝離性保護構件21保護感壓接著劑層14之對應光透過區域10之部分,因此於去除支撐層18(及黏著構件)時,不會於該部分造成傷痕或附著異物。而且,可將感壓接著劑層14之背面之開口部B部分20的算術平均粗度Ra調整為1μm以下。因此可有 效地防止光學偵測精度之下降。 In the manufacturing method of the present invention, the portion of the corresponding light-transmitting region 10 of the pressure-sensitive adhesive layer 14 is protected by the peeling protective member 21, so that when the support layer 18 (and the adhesive member) is removed, no scratches or portions are caused in the portion. Attach foreign matter. Further, the arithmetic mean roughness Ra of the opening portion B portion 20 on the back surface of the pressure-sensitive adhesive layer 14 can be adjusted to 1 μm or less. So there can be Effectively prevent the degradation of optical detection accuracy.

感壓接著劑層14之背面之開口部B部分20的算術平均粗度Ra為1μm以下,較佳為0.5μm以下,更佳為0.2μm以下,又更佳為0.1μm以下。 The arithmetic mean roughness Ra of the opening portion B portion 20 on the back surface of the pressure-sensitive adhesive layer 14 is 1 μm or less, preferably 0.5 μm or less, more preferably 0.2 μm or less, and still more preferably 0.1 μm or less.

半導體元件係經過使用前述積層研磨墊對半導體晶圓之表面進行研磨之步驟而製造。半導體晶圓通常係於矽晶圓上積層配線金屬及氧化膜。半導體晶圓之研磨方法、研磨裝置並無特別限制,例如使用如下研磨裝置等而進行,前述研磨裝置如圖1所示般具備:研磨壓盤2,係支撐積層研磨墊1;支撐台(研磨頭)5,係支撐半導體晶圓4;墊材,係用於對晶圓進行均勻加壓;及研磨劑3之供給機構。積層研磨墊1例如藉由利用雙面膠帶等黏著構件進行貼附而安裝於研磨壓盤2。研磨壓盤2與支撐台5係以各自所支撐之積層研磨墊1與半導體晶圓4相對向之方式配置,且各自具備旋轉軸6、7。而且,於支撐台5側設有用於將半導體晶圓4壓抵於積層研磨墊1之加壓機構。研磨時,一面使研磨壓盤2與支撐台5旋轉一面將半導體晶圓4壓抵於積層研磨墊1,且一面供給漿料一面進行研磨。漿料之流量、研磨負荷、研磨壓盤轉速、及晶圓轉速並無特別限制,係適當調整而進行。 The semiconductor element is manufactured by the step of polishing the surface of the semiconductor wafer using the above-described multilayer polishing pad. A semiconductor wafer is usually laminated with a wiring metal and an oxide film on a germanium wafer. The polishing method and the polishing apparatus for the semiconductor wafer are not particularly limited, and are performed, for example, by using a polishing apparatus such as the polishing platen 2, which supports the laminated polishing pad 1 and the support table (grinding). The head 5 is a semiconductor wafer 4; the mat is used for uniformly pressurizing the wafer; and the supply mechanism of the abrasive 3. The laminated polishing pad 1 is attached to the polishing platen 2 by, for example, bonding using an adhesive member such as a double-sided tape. The polishing platen 2 and the support table 5 are disposed such that the laminated polishing pad 1 supported by the polishing pad 2 and the semiconductor wafer 4 are opposed to each other, and each has a rotating shaft 6 and 7. Further, a pressurizing mechanism for pressing the semiconductor wafer 4 against the laminated polishing pad 1 is provided on the support table 5 side. At the time of polishing, the semiconductor wafer 4 is pressed against the laminated polishing pad 1 while the polishing platen 2 and the support table 5 are rotated, and the slurry is supplied while being polished. The slurry flow rate, the polishing load, the polishing platen rotation speed, and the wafer rotation speed are not particularly limited, and are appropriately adjusted.

藉此將半導體晶圓4之表面之突出部分去除而研磨成 平坦狀。之後,藉由進行切割、接合、封裝等而製造半導體元件。半導體元件被用於運算處理裝置或記憶體等。 Thereby, the protruding portion of the surface of the semiconductor wafer 4 is removed and ground into Flat. Thereafter, the semiconductor element is fabricated by performing dicing, bonding, packaging, or the like. The semiconductor element is used for an arithmetic processing device, a memory, or the like.

[實施例] [Examples]

以下列舉實施例說明本發明進行,但本發明並不限定於該等實施例。 The invention is illustrated by the following examples, but the invention is not limited to the examples.

[測定、評價方法] [Measurement, evaluation method]

(算術平均粗度之測定) (Measurement of arithmetic mean roughness)

依據JIS B0601-1994,對PET(Polyethylene Terephthalate,聚對苯二甲酸乙二酯)脫模片、剝離性保護構件、丙烯酸系感壓接著劑層、及輥之表面之算術平均粗度Ra(μm)進行測定。 According to JIS B0601-1994, the arithmetic mean roughness Ra (μm) of a PET (Polyethylene Terephthalate) release sheet, a peelable protective member, an acrylic pressure-sensitive adhesive layer, and a surface of a roll ) Perform the measurement.

(輥之ASKER-A硬度之測定) (Measurement of ASKER-A hardness of the roller)

依據JIS K6253-1997而進行。使用硬度計(高分子計器公司製造,ASKER-A型硬度計),測定23℃之輥之ASKER-A硬度。 It is carried out in accordance with JIS K6253-1997. The ASKER-A hardness of the roll at 23 ° C was measured using a durometer (manufactured by Polymer Co., Ltd., ASKER-A type hardness meter).

(25小時研磨後之積層研磨墊之狀態之評價) (Evaluation of the state of the laminated polishing pad after 25 hours of grinding)

使用MIRRA(AMAT公司製造)作為研磨裝置,且使用所製作之積層研磨墊,將於8吋之矽晶圓上形成有10000Å之鎢膜之晶圓逐片進行60秒研磨,並檢查光學終點檢測。然後,更換晶圓並且進行25小時研磨。之後利用目視 觀察積層研磨墊之層間之接著狀態。 Using MIRRA (manufactured by AMAT) as a polishing device, and using the fabricated polishing pad, a wafer of 10,000 Å tungsten film was formed on a wafer of 8 Å to be polished for 60 seconds, and optical end point inspection was performed. . Then, the wafer was replaced and ground for 25 hours. Visual use The state of adhesion between the layers of the laminated polishing pad was observed.

再者,作為研磨條件,於研磨中係以150ml/min之流量添加漿料,前述漿料係在利用超純水將W2000(Cabot公司製造)稀釋為2倍所得之稀釋液中添加有2重量%過氧化氫水,將研磨負荷為5psi,將研磨壓盤轉速設為120rpm,及將晶圓轉速設為120rpm。另外,於研磨前,使用修整器(SAESOL公司製造,DK45)對研磨墊表面進行20秒修整處理。關於修整條件,將修整負荷設為10g/cm2,將研磨壓盤轉速設為30rpm,及將修整器轉速設為15rpm。 In addition, as a polishing condition, a slurry was added at a flow rate of 150 ml/min during the polishing, and the slurry was added to a diluted solution obtained by diluting W2000 (manufactured by Cabot Co., Ltd.) twice with ultrapure water. % hydrogen peroxide water, the grinding load was 5 psi, the grinding platen rotation speed was set to 120 rpm, and the wafer rotation speed was set to 120 rpm. Further, before the polishing, the surface of the polishing pad was subjected to a trimming treatment for 20 seconds using a dresser (manufactured by SAESOL, DK45). Regarding the trimming conditions, the dressing load was set to 10 g/cm 2 , the grinding platen rotation speed was set to 30 rpm, and the dresser rotation speed was set to 15 rpm.

(剝離強度之測定) (Measurement of peel strength)

自所製作之積層研磨墊切取光透過區域部分,以180°之剝離角度、300mm/min之拉拽速度對光透過區域與雙面膠帶進行拉拽,測定此時之剝離強度(N/19.8mm)。 The light-transmitting region was cut out from the laminated polishing pad which was produced, and the light-transmitting region and the double-sided tape were pulled at a peeling angle of 180° and a pulling speed of 300 mm/min, and the peeling strength at this time was measured (N/19.8 mm). ).

實施例1 Example 1 〔光透過區域之製作〕 [production of light transmission area]

將聚醚系預聚物(Uniroyal公司製造,Adiprene L-325,NCO濃度:2.22meq/g)100重量分預先調溫為70℃,於其中加入調溫為120℃之4,4'-亞甲基雙(鄰氯苯胺)(Ihara Chemical公司製造,Iharacuamine MT)26重量分,並攪拌約1分鐘。然後,將前述混合液流入保溫為100℃之模具中,於100℃進行8小時後硬化(postcure),而製作聚胺基甲酸酯樹脂。利用特定尺寸之湯姆生(Thomson)刀 裁切所製作之聚胺基甲酸酯樹脂,而製作光透過區域(55.8mm×19.8mm,厚度1.95mm)。 100 parts by weight of a polyether-based prepolymer (manufactured by Uniroyal Co., Ltd., Adiprene L-325, NCO concentration: 2.22 meq/g) was previously adjusted to 70 ° C, and 4,4'-Asia adjusted to a temperature of 120 ° C was added thereto. Methyl bis(o-chloroaniline) (Iharacuamine MT, manufactured by Ihara Chemical Co., Ltd.) was 26 parts by weight and stirred for about 1 minute. Then, the mixed liquid was poured into a mold kept at 100 ° C, and post-cured at 100 ° C for 8 hours to prepare a polyurethane resin. Use a specific size Thomson knife The produced polyurethane resin was cut to produce a light transmission region (55.8 mm × 19.8 mm, thickness: 1.95 mm).

〔研磨區域之製作〕 [Production of grinding area]

於反應容器內,將聚醚系預聚物(Uniroyal公司製造,Adiprene L-325,NCO濃度:2.22meq/g)100重量分、及聚矽氧系界面活性劑(Goldschmidt公司製造,B8465)3重量分混合,並將溫度調整為80℃。使用攪拌翼,於900rpm之轉速下以於反應體系內摻入氣泡之方式進行約4分鐘激烈攪拌。於其中添加預先於120℃熔融之4,4'-亞甲基雙(鄰氯苯胺)(Ihara Chemical公司製造,Iharacuamine MT)26重量分。然後,繼續攪拌約1分鐘後,將反應溶液流入平鍋型之敞模。於該反應溶液之流動性消失之時間點放入烘箱內,於110℃進行6小時後硬化,而獲得聚胺基甲酸酯發泡體塊。使用帶鋸型之切片機(Fecken公司製造)將前述聚胺基甲酸酯發泡體塊切片,而獲得聚胺基甲酸酯發泡體片(比重:0.86,D硬度:52度)。接著使用拋光機(Amitec公司製造),將該片表面拋光成特定厚度,而製成調整過厚度精度之片(片厚度:2.00mm)。使用槽加工機(東邦鋼機公司製造),對該拋光處理後之片之表面進行同心圓狀之槽加工(槽寬度:0.25mm,槽深度:0.80mm,槽間距:1.5mm)。將該片沖裁成直徑51cm之大小,然後於沖裁後之片之距中心為8.3cm之位置形成開口部A(56mm×20mm),而製作研磨區域。 In the reaction vessel, a polyether-based prepolymer (manufactured by Uniroyal Co., Ltd., Adiprene L-325, NCO concentration: 2.22 meq/g) was used in an amount of 100 parts by weight, and a polyfluorene-based surfactant (manufactured by Goldschmidt Co., Ltd., B8465) 3 The weights were mixed and the temperature was adjusted to 80 °C. Stirring was carried out for about 4 minutes by using a stirring blade at a rotation speed of 900 rpm in a manner of incorporating bubbles into the reaction system. To this, 26 parts by weight of 4,4'-methylenebis(o-chloroaniline) (Iharacuamine MT, manufactured by Ihara Chemical Co., Ltd.) which was previously melted at 120 ° C was added. Then, after stirring was continued for about 1 minute, the reaction solution was poured into an open mold of a pan type. The time point at which the fluidity of the reaction solution disappeared was placed in an oven, and the mixture was hardened at 110 ° C for 6 hours to obtain a polyurethane foam block. The polyurethane foam block was sliced using a band saw type slicing machine (manufactured by Fecken Co., Ltd.) to obtain a polyurethane foam sheet (specific gravity: 0.86, D hardness: 52 degrees). Then, using a polishing machine (manufactured by Amitec Co., Ltd.), the surface of the sheet was polished to a specific thickness to prepare a sheet having an adjusted thickness precision (sheet thickness: 2.00 mm). The surface of the polished sheet was subjected to concentric circular groove processing using a groove processing machine (manufactured by Toho Steel Co., Ltd.) (groove width: 0.25 mm, groove depth: 0.80 mm, groove pitch: 1.5 mm). The sheet was punched out to a size of 51 cm in diameter, and then an opening portion A (56 mm × 20 mm) was formed at a position of 8.3 cm from the center of the punched sheet to prepare a polishing region.

〔積層研磨墊之製作〕 [Production of laminated polishing pad]

利用圖3所示之方法製作積層研磨墊。首先,於研磨區域之開口部A內嵌入光透過區域,而製作研磨層。其次,將研磨層與雙面膠帶積層而製作未接著積層片,前述雙面膠帶係於PET基材之單面具有丙烯酸系熱熔接著劑層(厚度為80μm)且於另一面具有丙烯酸系感壓接著劑層及PET脫模片,使該未接著積層片通過一對輥之間,而將研磨區域與光透過區域接著固定於雙面膠帶之丙烯酸系熱熔接著劑層,而製作接著積層片。又,雙面膠帶側之輥之溫度調整成120℃。 A laminated polishing pad was produced by the method shown in FIG. First, a light transmitting region is embedded in the opening A of the polishing region to form a polishing layer. Next, the polishing layer and the double-sided tape were laminated to form a laminated sheet, and the double-sided tape had an acrylic hot-melt adhesive layer (thickness: 80 μm) on one side of the PET substrate and an acrylic feeling on the other side. The pressure-sensitive adhesive layer and the PET release sheet are passed through a pair of rolls, and the polishing region and the light-transmitting region are then fixed to the acrylic hot-melt adhesive layer of the double-sided tape, and then laminated. sheet. Further, the temperature of the roller on the side of the double-sided tape was adjusted to 120 °C.

之後從接著積層片剝離PET脫模片,於丙烯酸系感壓接著劑層之對應光透過區域之部分貼附剝離性保護構件(經脫模處理之PET膜,55mm×18mm,厚度:100μm)。然後使用層壓機,將包含發泡胺基甲酸酯之支撐層(日本發條公司製造,Nippalay EXT)積層於丙烯酸系感壓接著劑層,並將研磨層、雙面膠帶、及支撐層壓接。之後,配合研磨層之大小而裁切雙面膠帶及支撐層。 Thereafter, the PET release sheet was peeled off from the subsequent laminated sheet, and a peelable protective member (a release-treated PET film, 55 mm × 18 mm, thickness: 100 μm) was attached to a portion of the corresponding light-transmitting region of the acrylic pressure-sensitive adhesive layer. Then, using a laminator, a support layer containing a foaming urethane (manufactured by Nippon Spring Co., Ltd., Nippalay EXT) was laminated on the acrylic pressure-sensitive adhesive layer, and the polishing layer, the double-sided tape, and the support layer were laminated. Crimp. Thereafter, the double-sided tape and the support layer are cut in accordance with the size of the polishing layer.

然後使用層壓機,於支撐層貼合感壓式雙面膠帶(3M公司製造,442JA),裁切去除對應光透過區域之部分之支撐層及感壓式雙面膠帶,進一步去除剝離性保護構件,藉此形成開口部B,而製作積層研磨墊。 Then, using a laminating machine, a pressure-sensitive double-sided tape (manufactured by 3M Company, 442JA) was attached to the support layer, and the support layer corresponding to the light-transmitting region and the pressure-sensitive double-sided tape were cut and removed to further remove the peeling protection. The member is thereby formed into the opening portion B to form a laminated polishing pad.

實施例2~6 Example 2~6

除變更為表1記載之條件以外,利用與實施例1同樣之方法製作積層研磨墊。 A laminated polishing pad was produced in the same manner as in Example 1 except that the conditions described in Table 1 were changed.

實施例7 Example 7

利用圖3所示之方法製作積層研磨墊。首先,於前述研磨區域之開口部A內嵌入前述光透過區域而製作研磨層。其次,將研磨層與雙面膠帶積層而製作未接著積層片,前述雙面膠帶係於PET基材之單面具有NBR系熱熔接著劑層(厚度為50μm)且於另一面具有丙烯酸系感壓接著劑層及PET脫模片,使該未接著積層片通過一對輥之間,而將研磨區域與光透過區域接著固定於雙面膠帶之NBR系熱熔接著劑層,而製作接著積層片。又,雙面膠帶側之輥之溫度調整成120℃。之後利用與實施例1同樣之方法製作積層研磨墊。 A laminated polishing pad was produced by the method shown in FIG. First, the light-transmitting region is embedded in the opening A of the polishing region to form a polishing layer. Next, the polishing layer and the double-sided tape were laminated to form a laminated sheet, and the double-sided tape had an NBR-based hot-melt adhesive layer (thickness: 50 μm) on one side of the PET substrate and an acrylic feeling on the other side. The pressure-sensitive adhesive layer and the PET release sheet are passed through a pair of rolls, and the polishing region and the light-transmitting region are then fixed to the NBR-based hot-melt adhesive layer of the double-sided tape, and then laminated. sheet. Further, the temperature of the roller on the side of the double-sided tape was adjusted to 120 °C. Thereafter, a laminated polishing pad was produced in the same manner as in Example 1.

比較例1 Comparative example 1 〔積層研磨墊之製作〕 [Production of laminated polishing pad]

將前述研磨區域與前述雙面膠帶積層而製作未接著積層片,使該未接著積層片通過一對輥之間,而將研磨區域接著固定於雙面膠帶之丙烯酸系熱熔接著劑層,而製作接著積層片。又,雙面膠帶側之輥之溫度調整成120℃。之後,於接著積層片之研磨區域之開口部A內嵌入光透過區域,使用熱壓機,於加壓溫度為100℃、加壓壓力為2kg/cm2、加壓時間為10秒之條件下,將光透過區域接著固 定於雙面膠帶之丙烯酸系熱熔接著劑層。然後利用與實施例1同樣之方法製作積層研磨墊。 The polishing region is laminated with the double-sided tape to form an unlaminated sheet, and the unlaminated sheet is passed between a pair of rolls, and the polishing region is subsequently fixed to the acrylic hot-melt adhesive layer of the double-sided tape. Make a layer of the next layer. Further, the temperature of the roller on the side of the double-sided tape was adjusted to 120 °C. Thereafter, a light-transmitting region was embedded in the opening A of the polishing region following the laminated sheet, and the hot press was used at a pressurization temperature of 100 ° C, a pressurization pressure of 2 kg/cm 2 , and a pressurization time of 10 seconds. The light-transmitting region is then fixed to the acrylic hot-melt adhesive layer of the double-sided tape. Then, a laminated polishing pad was produced in the same manner as in Example 1.

實施例1~7之積層研磨墊即便於25小時研磨後在研磨層與雙面膠帶之間亦未見剝離,且光學終點檢測未發生異常。而且,光透過區域與雙面膠帶之剝離強度高,為25(N/19.8mm)以上。另一方面,比較例1之積層研磨墊於10小時研磨後在研磨層與雙面膠帶之間發生剝離,且因剝離而導致光學終點檢測發生異常。而且,光透過區域與雙面膠帶之剝離強度低,為8(N/19.8mm)。認為其原因在於,將研磨區域與光透過區域分2次接著固定於熱熔接著劑層,因此熱熔接著劑之接著特性因2次熱歷程而下降。 The laminated polishing pads of Examples 1 to 7 showed no peeling between the polishing layer and the double-sided tape even after polishing for 25 hours, and no abnormality occurred in the optical end point detection. Further, the peeling strength of the light-transmitting region and the double-sided tape is as high as 25 (N/19.8 mm) or more. On the other hand, in the multilayer polishing pad of Comparative Example 1, peeling occurred between the polishing layer and the double-sided tape after polishing for 10 hours, and the optical end point detection was abnormal due to peeling. Further, the peeling strength of the light-transmitting region and the double-sided tape was as low as 8 (N/19.8 mm). The reason for this is considered to be that the polishing region and the light-transmitting region are bonded to the hot-melt adhesive layer twice, and the subsequent properties of the hot-melt adhesive are lowered by the secondary heat history.

[產業上之可利用性] [Industrial availability]

本發明之積層研磨墊可穩定且以高研磨效率地進行透鏡、反射鏡等光學材料或矽晶圓、硬碟用玻璃基板、鋁基板、及一般之金屬研磨加工等要求高度表面平坦性的材料之平坦化加工。本發明之積層研磨墊尤其適合用於使矽晶圓及在其上形成有氧化物層、金屬層等之元件進一步積層、形成該等氧化物層或金屬層之前之平坦化步驟。 The laminated polishing pad of the present invention can stably and efficiently perform optical materials such as lenses and mirrors, or glass substrates for hard disks, aluminum substrates, and general metal polishing processes, which require high surface flatness, with high polishing efficiency. Flattening processing. The multilayer polishing pad of the present invention is particularly suitable for use in a planarization step prior to further laminating a germanium wafer and an element on which an oxide layer, a metal layer or the like is formed, and forming the oxide layer or the metal layer.

1‧‧‧積層研磨墊 1‧‧‧Laminated polishing pad

8‧‧‧研磨區域 8‧‧‧Abrasion area

9‧‧‧開口部A 9‧‧‧ Opening A

10‧‧‧光透過區域 10‧‧‧Light transmission area

11‧‧‧研磨層 11‧‧‧Abrasive layer

12‧‧‧基材 12‧‧‧Substrate

13‧‧‧熱熔接著劑層 13‧‧‧Hot melt adhesive layer

14‧‧‧感壓接著劑層 14‧‧‧ Pressure-sensitive adhesive layer

15‧‧‧脫模片 15‧‧‧ release film

16‧‧‧雙面膠帶 16‧‧‧Double-sided tape

17‧‧‧接著積層片 17‧‧‧Next layered film

18‧‧‧支撐層 18‧‧‧Support layer

19‧‧‧開口部B 19‧‧‧ Opening B

20‧‧‧感壓接著劑層之背面之開口部B部分 20‧‧‧ Opening part B of the back of the pressure-sensitive adhesive layer

Claims (7)

一種積層研磨墊之製造方法,係包括以下步驟:將於研磨區域之開口部A內具有光透過區域之研磨層、與於基材之單面具有熱熔接著劑層且於另一面具有感壓接著劑層及脫模片的雙面膠帶,以研磨層之背面與熱熔接著劑層相接之方式積層,使積層而成之未接著積層片通過雙面膠帶側之輥為熱輥之一對輥之間,而將研磨區域與光透過區域接著固定於雙面膠帶之熱熔接著劑層,而製作接著積層片之步驟;及從接著積層片剝離前述脫模片,於露出之感壓接著劑層貼附支撐層之步驟,前述支撐層於對應前述光透過區域之部分具有開口部B;前述脫模片之與感壓接著劑層相接之面之算術平均粗度Ra為1μm以下。 A method for manufacturing a laminated polishing pad comprising the steps of: providing a polishing layer having a light transmitting region in an opening A of a polishing region, having a hot-melt adhesive layer on one side of the substrate, and having a pressure on the other surface The double-sided tape of the adhesive layer and the release sheet is laminated such that the back surface of the polishing layer is in contact with the hot-melt adhesive layer, so that the laminated laminated sheet is passed through the roll on the double-sided tape side as one of the heat rollers. Between the rolls, the polishing area and the light transmission area are then fixed to the hot-melt adhesive layer of the double-sided tape to form a step of laminating the sheet; and the release sheet is peeled off from the subsequent laminated sheet to expose the pressure a step of attaching a support layer to the support layer, wherein the support layer has an opening B at a portion corresponding to the light-transmitting region; and an arithmetic mean roughness Ra of the surface of the release sheet that is in contact with the pressure-sensitive adhesive layer is 1 μm or less . 一種積層研磨墊之製造方法,係包括以下步驟:將於研磨區域之開口部A內具有光透過區域之研磨層、與於基材之單面具有熱熔接著劑層且於另一面具有感壓接著劑層及脫模片的雙面膠帶,以研磨層之背面與熱熔接著劑層相接之方式積層,使積層而成之未接著積層片通過雙面膠帶側之輥為熱輥之一對輥之間,而將研磨區域與光透過區域接著固定於雙面膠帶之熱熔接著劑層,而製作接著積層片之步驟; 從接著積層片剝離前述脫模片,於露出之感壓接著劑層之對應光透過區域之部分設置剝離性保護構件之步驟;於設置有剝離性保護構件之感壓接著劑層貼附支撐層之步驟;及去除對應光透過區域之部分之支撐層並進一步去除剝離性保護構件,而形成開口部B之步驟;且前述脫模片及前述剝離性保護構件之與感壓接著劑層相接之面之算術平均粗度Ra為1μm以下。 A method for manufacturing a laminated polishing pad comprising the steps of: providing a polishing layer having a light transmitting region in an opening A of a polishing region, having a hot-melt adhesive layer on one side of the substrate, and having a pressure on the other surface The double-sided tape of the adhesive layer and the release sheet is laminated such that the back surface of the polishing layer is in contact with the hot-melt adhesive layer, so that the laminated laminated sheet is passed through the roll on the double-sided tape side as one of the heat rollers. Between the rolls, the polishing area and the light transmission area are then fixed to the hot-melt adhesive layer of the double-sided tape to form a step of laminating the sheets; Removing the release sheet from the subsequent laminated sheet, and providing a peelable protective member to a portion of the exposed light-transmitting region of the exposed pressure-sensitive adhesive layer; and attaching the support layer to the pressure-sensitive adhesive layer provided with the peelable protective member a step of removing the support layer corresponding to the portion of the light-transmitting region and further removing the peeling protective member to form the opening portion B; and the release sheet and the peeling protective member are in contact with the pressure-sensitive adhesive layer The arithmetic mean roughness Ra of the surface is 1 μm or less. 如請求項1或2所記載之積層研磨墊之製造方法,其中研磨層側之輥於23℃之ASKER-A硬度為20度~65度。 The method for producing a laminated polishing pad according to claim 1 or 2, wherein the roller of the polishing layer side has an Asker-A hardness of from 20 to 65 degrees at 23 °C. 如請求項1或2所記載之積層研磨墊之製造方法,其中雙面膠帶側之輥之表面之算術平均粗度Ra為15μm以下。 The method for producing a laminated polishing pad according to claim 1 or 2, wherein the surface of the roller on the double-sided tape side has an arithmetic mean roughness Ra of 15 μm or less. 如請求項1或2所記載之積層研磨墊之製造方法,其中未接著積層片中之研磨區域與光透過區域之表面高度差為100μm以下。 The method for producing a laminated polishing pad according to claim 1 or 2, wherein a difference in surface height between the polishing region and the light-transmitting region in the laminated sheet is not 100 μm or less. 一種積層研磨墊,係藉由如請求項1至5中任一項所記載之積層研磨墊之製造方法而獲得。 A laminated polishing pad obtained by the method for producing a laminated polishing pad according to any one of claims 1 to 5. 一種半導體元件之製造方法,係包括使用如請求項6所記載之積層研磨墊對半導體晶圓之表面進行研磨之步驟。 A method of manufacturing a semiconductor device, comprising the step of polishing a surface of a semiconductor wafer using a build-up polishing pad as recited in claim 6.
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KR102257834B1 (en) * 2019-09-06 2021-05-28 에스케이씨솔믹스 주식회사 Polishing pad with depth adjustable grooves and polishing apparatus comprising the same
CN112345336B (en) * 2020-10-12 2023-02-03 上海华力集成电路制造有限公司 Method for polishing back of ultra-small sample
CN112238670B (en) * 2020-10-16 2022-11-15 上海江丰平芯电子科技有限公司 Preparation method of grinding pad
CN117798814B (en) * 2024-03-01 2024-05-28 浙江大学杭州国际科创中心 Polishing pad, preparation method of polishing pad and polishing method

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TWI790295B (en) * 2017-10-11 2023-01-21 日商富士紡控股股份有限公司 Polishing pad and method for manufacturing polishing pad
TWI731305B (en) * 2018-04-11 2021-06-21 日商Sumco股份有限公司 Double-side polishing apparatus for a workpiece
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