TW201621075A - Self-cooling type movable tray for coating - Google Patents

Self-cooling type movable tray for coating Download PDF

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TW201621075A
TW201621075A TW103142869A TW103142869A TW201621075A TW 201621075 A TW201621075 A TW 201621075A TW 103142869 A TW103142869 A TW 103142869A TW 103142869 A TW103142869 A TW 103142869A TW 201621075 A TW201621075 A TW 201621075A
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self
phase change
carrier
base
carrier unit
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TW103142869A
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TWI530578B (en
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Chong-Yu Ye
Hui-Jia Su
Cheng-Peng Ye
Zong-Wei Zhang
Yi-Yuan Huang
Wan-Yu Huang
mu-sen Lu
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Linco Technology Co Ltd
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Abstract

The present invention provides a self-cooling type movable tray for coating, which comprises a tray unit and a phase transformation material. A closed space is formed inside the tray unit. The phase transformation material is filled in the hermetic space of the tray unit. The phase transformation material can absorb thermal energy from the g tray unit for use as the latent heat required for melting a portion of the phase transformation material from a solid state into a liquid state, and the melting point of the phase transformation material is between 18 DEG C and 95 DEG C.

Description

自冷式移動式鍍膜承載盤 Self-cooling mobile coating carrier

本發明是有關於一種鍍膜承載盤,特別是指一種自冷式移動式鍍膜承載盤。 The invention relates to a coated carrier disk, in particular to a self-cooling mobile coating carrier disk.

目前真空濺鍍技術的應用日漸廣泛,其中以連續式濺鍍設備(In-line sputtering apparatus)因為擁有速度快、產量高、鍍覆品質優良等優點,且能大幅地降低生產成本,因此已廣泛地應用於大量鍍膜的製程中。一般連續式濺鍍設備依序包含至少三個區域:一進料腔體區、一鍍膜腔體區,及一出料腔體區;其中,一待鍍物是被置於一傳送單元上的一承載盤上,以於上述腔體區內或跨腔體區之間傳輸,並由該出料腔體區輸出一在該待鍍物之一表面鍍覆有一鍍膜的成品。然而,於連續式濺鍍過程中,由於該鍍膜腔體區內部是使用高能的離子體撞擊靶材,因而使該鍍膜腔體區的內部溫度大量升高。特別是為了縮短鍍膜時間,此技術領域的相關技術人員還會透過提高靶材輸出功率的手段,以增加被濺離靶材外的鍍材量。前述做法更容易使鍍膜腔體區內的溫度進一步增加,以致於該承載盤與該待鍍物的溫度也相應增加。若該待鍍物所吸收到的一 高溫熱能未能及時散去,一旦該待鍍物甚或是其上的鍍膜無法承受該高溫熱能因而產生變形時,將導致該待鍍物變形並從而損壞該鍍膜的品質。 At present, the application of vacuum sputtering technology is becoming more and more extensive. Among them, the In-line sputtering apparatus has been widely used because of its high speed, high output, excellent plating quality, and greatly reduced production cost. It is used in the process of coating a large number of coatings. Generally, the continuous sputtering apparatus sequentially comprises at least three regions: a feed cavity region, a coating cavity region, and an discharge cavity region; wherein a to-be-plated object is placed on a transfer unit. A carrier disk is transported between the cavity region or the cavity region, and a discharge finished product is printed on the surface of the material to be plated. However, in the continuous sputtering process, since the inside of the plating chamber region is irradiated with a high-energy ion body, the internal temperature of the coating chamber region is greatly increased. In particular, in order to shorten the coating time, those skilled in the art will also increase the amount of plating material splashed off the target by means of increasing the output power of the target. The foregoing practice makes it easier to further increase the temperature in the coating chamber region, so that the temperature of the carrier tray and the object to be plated is correspondingly increased. If the object to be plated is absorbed The high-temperature heat energy is not dissipated in time, and once the coating or even the coating thereon cannot be deformed by the high-temperature heat energy, the object to be plated is deformed and the quality of the coating is damaged.

參閱圖1,為了解決散熱問題,如台灣第I392756核准公告號發明專利案則公開一種濺鍍用承載裝置1,其包含一用以承載一待鍍物(如基板,圖未示)的載具11、一承載該載具11的金屬托盤12,及一供放置該金屬托盤12的導熱傳送帶13。該金屬托盤12於面向該載具11的一表面形成有複數鋸齒狀凸起121。該載具11於面向該金屬托盤12之一表面亦形成有複數與該金屬托盤12的鋸齒狀凸起121相對應的凹槽111。藉由該載具11的凹槽111與該金屬托盤12的鋸齒狀凸起121彼此嚙合,使該載具11與該金屬托盤12間形成有較大的熱接觸面積。藉此,幫助該待鍍物及其上所沉積的一鍍膜(圖未示),將濺鍍過程中所累積在該載具11、該待鍍物與該鍍膜上的一高溫熱能傳導至該金屬托盤12,並經由該導熱傳送帶13帶走該金屬托盤12的高溫熱能。雖然該金屬托盤12與該導熱傳送帶13能夠藉由其本身之熱傳導係數高的特點以帶走該高溫熱能。然而,由於該金屬托盤12及該導熱傳送帶13本身的熱容(heat capacity)仍嫌不足,以致於該金屬托盤12與該導熱傳送帶13能自該載具11導出的熱能有限,因而限縮了散熱效果。 Referring to FIG. 1 , in order to solve the heat dissipation problem, for example, the invention patent application No. I392756 of Taiwan discloses a sputtering carrying device 1 comprising a carrier for carrying a material to be plated (such as a substrate, not shown). 11. A metal tray 12 carrying the carrier 11 and a thermally conductive conveyor 13 for placing the metal tray 12. The metal tray 12 is formed with a plurality of serrated protrusions 121 on a surface facing the carrier 11. The carrier 11 is also formed with a plurality of grooves 111 corresponding to the serrations 121 of the metal tray 12 on a surface facing the metal tray 12. The groove 111 of the carrier 11 and the serrated protrusion 121 of the metal tray 12 are engaged with each other to form a large thermal contact area between the carrier 11 and the metal tray 12. Thereby, the plating object and a coating film deposited thereon (not shown) are used to conduct a high-temperature heat energy accumulated on the carrier 11, the object to be plated and the plating film during the sputtering process. To the metal tray 12, the high temperature heat energy of the metal tray 12 is carried away via the heat transfer belt 13. Although the metal tray 12 and the heat conduction belt 13 can be characterized by their high thermal conductivity, the high temperature heat energy can be taken away. However, since the heat capacity of the metal tray 12 and the heat conduction belt 13 itself is still insufficient, the heat transfer energy of the metal tray 12 and the heat conduction belt 13 from the carrier 11 is limited, thereby being limited. heat radiation.

經上述說明可知,如何進一步地提升濺鍍用承載裝置的熱容,以有效地帶走濺鍍過程中累積在待鍍物與鍍膜上的高溫熱能並從而提升鍍膜品質,是此技術領域的 相關技術人員所待突破的難題。 According to the above description, how to further improve the heat capacity of the sputtering carrying device to effectively remove the high-temperature heat energy accumulated on the object to be plated and the plating film during the sputtering process and thereby improve the coating quality, is the technical field of The problem that the relevant technical personnel are to break through.

因此,本發明之目的,即在提供一種自冷式移動式承載盤。 Accordingly, it is an object of the present invention to provide a self-cooling mobile carrier.

於是,本發明自冷式移動式承載盤,包含:一載盤單元,及一相變化物質。該載盤單元內部形成有一密閉空間。該相變化物質填置於該載盤單元的密閉空間中。在本發明中,該相變化物質能自該載盤單元吸收一熱能,以作為至少部分的該相變化物質自一固態熔融成一液態時所需的潛熱(latent heat),且該相變化物質的熔點為介於18℃至95℃間。 Thus, the self-cooling mobile carrier of the present invention comprises: a carrier unit, and a phase change substance. A sealed space is formed inside the carrier unit. The phase change substance is filled in the sealed space of the carrier unit. In the present invention, the phase change material is capable of absorbing a thermal energy from the carrier unit as at least a portion of the latent heat required to melt the phase change material from a solid to a liquid state, and the phase change material The melting point is between 18 ° C and 95 ° C.

本發明之功效在於,藉由該相變化物質本身於相變過程所需的熔解潛熱,以自該載盤單元吸收該熱能,能帶走於濺鍍過程中累積在待鍍物上的高溫熱能,以藉此提升散熱效果並從而改善鍍膜品質。 The invention has the effect of absorbing the heat energy from the carrier unit by the phase-changing substance itself in the latent heat of the phase change process, and can carry away the high temperature accumulated on the object to be plated during the sputtering process. Thermal energy to enhance heat dissipation and thereby improve coating quality.

2‧‧‧載盤單元 2‧‧‧Loading unit

20‧‧‧密閉空間 20‧‧‧Confined space

21‧‧‧基座 21‧‧‧Base

211‧‧‧基壁 211‧‧‧ base wall

212‧‧‧圍壁 212‧‧‧ wall

213‧‧‧第一環形止漏槽 213‧‧‧First annular stop groove

214‧‧‧凸柱 214‧‧‧Bump

215‧‧‧鎖固孔 215‧‧‧Lock hole

216‧‧‧第二環形止漏槽 216‧‧‧Second annular stop groove

217‧‧‧承載面 217‧‧‧ bearing surface

218‧‧‧限位條 218‧‧‧Limited bars

219‧‧‧表面 219‧‧‧ surface

22‧‧‧封板 22‧‧‧Closed

23‧‧‧第一密封環 23‧‧‧First seal ring

24‧‧‧鎖固件 24‧‧‧Locker

25‧‧‧第二密封環 25‧‧‧Second seal ring

3‧‧‧相變化物質 3‧‧‧ phase change substances

本發明之其他的特徵及功效,將於參照圖式的實施方式中清楚地呈現,其中:圖1是一立體分解圖,說明由台灣第I392756核准公告號發明專利案所公開的一種濺鍍用承載裝置;圖2是一立體組合圖,說明本發明自冷式移動式鍍膜承載盤的一實施例;圖3是一立體分解圖,說明本發明該實施例的一載盤單 元,及其細部構件;圖4是一沿圖2的直線Ⅳ-Ⅳ所取得的剖視圖,說明該載盤單元的細部構件及其細部連結關係;圖5是一溫度對時間曲線圖,說明採用本發明該實施例模擬在一濺鍍過程中一待鍍物之一頂面、一底面、該載盤單元及一相變化物質的溫度變化;圖6是一溫度對時間曲線圖,說明採用一金屬載盤模擬在該濺鍍過程中該待鍍物之頂面、底面、該金屬載盤之一頂面與一底面的溫度變化。 Other features and effects of the present invention will be apparent from the following description of the drawings. FIG. 1 is an exploded perspective view showing a sputtering method disclosed by the Taiwan Patent No. I392756 Approved Publication No. FIG. 2 is a perspective view of an embodiment of a self-cooling mobile coating carrier of the present invention; FIG. 3 is an exploded perspective view showing a carrier of the embodiment of the present invention; FIG. 4 is a cross-sectional view taken along line IV-IV of FIG. 2, illustrating the detailed relationship of the detailed components of the carrier unit and its details; FIG. 5 is a temperature versus time graph illustrating The embodiment of the present invention simulates a temperature change of a top surface, a bottom surface, the carrier unit and a phase change substance of a to-be-plated material in a sputtering process; FIG. 6 is a temperature versus time graph, illustrating the use of a The metal carrier simulates the temperature change of the top surface, the bottom surface of the object to be plated, and the top surface and a bottom surface of the metal carrier during the sputtering process.

參閱圖2、圖3與圖4,本發明自冷式移動式承載盤的一實施例,是被放置於一連續式真空鍍膜系統(圖未示,如濺鍍系統)的一輸送單元上,以透過該輸送單元令該實施例於該連續式真空鍍膜系統的多個真空腔體間移動。本發明該實施例包含:一載盤單元2,及一相變化物質3(於圖2與圖3中是未顯示出該相變化物質3)。 Referring to Figures 2, 3 and 4, an embodiment of the self-cooling mobile carrier of the present invention is placed on a transport unit of a continuous vacuum coating system (not shown, such as a sputtering system). The embodiment is moved between the plurality of vacuum chambers of the continuous vacuum coating system by the transport unit. This embodiment of the invention comprises: a carrier unit 2, and a phase change substance 3 (not shown in Figures 2 and 3).

該載盤單元2包括一基座21、一封板22,及一第一密封環23。該基座21具有一基壁211與一圍繞該基壁211之一周緣以定義出一凹槽的圍壁212。該封板22蓋設於該圍壁212之一表面以封閉該凹槽並定義出一密閉空間20。該相變化物質3則填置於該密閉空間20中。該圍壁212之表面形成有一第一環形止漏槽213。該封板22蓋設於該圍壁212之表面時,將該第一密封環23夾制於該第一環形止漏槽213內。 The carrier unit 2 includes a base 21, a plate 22, and a first sealing ring 23. The base 21 has a base wall 211 and a surrounding wall 212 surrounding a periphery of the base wall 211 to define a recess. The sealing plate 22 is disposed on a surface of the surrounding wall 212 to close the groove and define a sealed space 20. The phase change substance 3 is filled in the sealed space 20. A first annular leak stop groove 213 is formed on the surface of the surrounding wall 212. When the sealing plate 22 is covered on the surface of the surrounding wall 212, the first sealing ring 23 is sandwiched in the first annular leakage preventing groove 213.

在本發明該實施例中,該載盤單元2的基座21與封板22是由鋁合金(Al alloy)所構成,且該相變化物質3能自該載盤單元2吸收一熱能,以作為該相變化物質3自一固態熔融成一液態所需的潛熱。較佳地,該相變化物質3的熔點為介於18℃至95℃間。 In this embodiment of the present invention, the base 21 and the sealing plate 22 of the carrier unit 2 are made of an aluminum alloy, and the phase change material 3 can absorb a heat energy from the carrier unit 2 to As the latent heat required for the phase change material 3 to be melted into a liquid state from a solid state. Preferably, the phase change material 3 has a melting point of between 18 ° C and 95 ° C.

此處值得說明的是,為了避免該相變化物質3於熔化時體積膨脹造成該載盤單元2變形。因此,該載盤單元2的密閉空間20需大於或等於該相變化物質3於該液態時所佔有的體積。此處需補充說明的是,該相變化物質3於一吸熱過程中的一儲熱能力(heat storage capacity),是介於134kJ/kg至250kJ/kg之間,且該吸熱過程包括一自該固態熔化為該液態的相變(phase transition)。該相變化物質3是選自一有機類材料(organic material)與一無機(inorganic material)類材料其中之一者。 It is worth noting here that the carrier unit 2 is deformed in order to avoid volume expansion of the phase change substance 3 upon melting. Therefore, the sealed space 20 of the carrier unit 2 needs to be greater than or equal to the volume occupied by the phase change material 3 in the liquid state. It should be additionally noted that the heat storage capacity of the phase change material 3 in an endothermic process is between 134 kJ/kg and 250 kJ/kg, and the endothermic process includes The solid state melts into a phase transition of the liquid. The phase change material 3 is one selected from the group consisting of an organic material and an inorganic material.

更具體地說,該有機類材料是一烴類(hydrocarbon),且該烴類是選自C16至C50的一烷類(alkane),例如C30至C50等烷類的石蠟(wax)。一般而言,該相變化物質(即,前述C16至C50的烷類)3於該固態時是佔有該密閉空間20的80%至90%。 More specifically, the organic material is a hydrocarbon, and the hydrocarbon is an alkane selected from C 16 to C 50 , such as a wax of a C 30 to C 50 alkane (wax) ). In general, the phase change material (i.e., the aforementioned C 16 to C 50 alkane) 3 occupies 80% to 90% of the sealed space 20 in the solid state.

此外,該無機類材料是選自一含有一結晶水合鹽(salt hydrates,MnH2O)的組成物,或一熔解鹽。具體地來說,該結晶水合鹽可為十水合硫酸鈉(Na2SO4‧10H2O)、三水合醋酸鈉(C2H3NaO2‧3H2O),或十二水合硫酸鋁銨(NH4Al(SO4)2.12H2O);該熔解鹽可為硝酸納(NaNO3)或硝酸 鉀(KNO3)。較佳地,於該組成物內的加入一添加劑以縮減該結晶水合鹽於熔解過程中所產生的體積變化量。 Further, the inorganic material is selected from a composition containing a crystalline hydrates (M n H 2 O), or a molten salt. Specifically, the crystalline hydrated salt may be sodium sulfate decahydrate (Na 2 SO 4 ‧10H 2 O), sodium acetate trihydrate (C 2 H 3 NaO 2 ‧3H 2 O), or ammonium aluminum sulfate dodecahydrate (NH 4 Al(SO 4 ) 2 .12H 2 O); the molten salt may be sodium nitrate (NaNO 3 ) or potassium nitrate (KNO 3 ). Preferably, an additive is added to the composition to reduce the amount of volume change produced by the crystalline hydrated salt during the melting process.

此處需進一步補充說明的是,為了進一步防止該相變化物質3因分布不均而於熔化時造成該載盤單元2局部變形。在本發明該實施例中,該載盤單元2還包括多數鎖固件24,及多數第二密封環25。該基座21的基壁211具有複數自該基壁211的一表面219朝該封板22凸伸而出的凸柱214。每一凸柱214具有一鎖固孔215,及一圍繞該鎖固孔215的第二環形止漏槽216。該等鎖固件24是貫穿該封板22,以分別對應鎖固於該等鎖固孔215,使該封板22與該基座21結合,且該封板22將該等第二密封環25分別對應夾制於該等第二環形止漏槽216內。 Further, it should be further noted here that in order to further prevent the phase change substance 3 from being unevenly distributed, the carrier unit 2 is locally deformed upon melting. In this embodiment of the invention, the carrier unit 2 further includes a plurality of locks 24 and a plurality of second seal rings 25. The base wall 211 of the base 21 has a plurality of protrusions 214 protruding from the surface 219 of the base wall 211 toward the sealing plate 22. Each of the protrusions 214 has a locking hole 215 and a second annular leakage groove 216 surrounding the locking hole 215. The locking members 24 are inserted through the sealing plate 22 to be respectively locked to the locking holes 215, so that the sealing plate 22 is coupled with the base 21, and the sealing plate 22 is used to seal the second sealing ring 25 Correspondingly, they are respectively clamped in the second annular leakage preventing grooves 216.

具體地來說,為了填置該相變化物質3於該密閉空間20中,須先將該基座21翻轉180°以使該基壁211的表面219朝上,並預先將呈粉末狀的該相變化物質3予以熔化成該液態。接著,將該液態的該相變化物質3填置於該基壁211與該圍壁212所定義的凹槽內,以覆蓋於該基壁211的表面219。進一步地,把該等鎖固件24通過該封板22,並分別對應鎖固於該等鎖固孔215,令該封板22與該基座21結合,從而導致該封板22將該第一密封環23夾制於該第一環形止漏槽213內,且該等第二密封環25分別對應夾制於該等第二環形止漏槽216內。最後,在該實施例被放置於該連續式真空鍍膜系統(圖未示)的輸送單元前,令該液態的相變化物質3冷卻凝固成該固態後,即可 供該連續式真空鍍膜系統做為承載盤使用。 Specifically, in order to fill the phase change material 3 in the sealed space 20, the susceptor 21 must first be turned 180° so that the surface 219 of the base wall 211 faces upward, and the powder is preliminarily The phase change substance 3 is melted into the liquid state. Next, the liquid phase change material 3 is placed in the groove defined by the base wall 211 and the surrounding wall 212 to cover the surface 219 of the base wall 211. Further, the locks 24 are passed through the sealing plate 22, and are respectively locked to the locking holes 215, so that the sealing plate 22 is combined with the base 21, thereby causing the sealing plate 22 to be the first The sealing ring 23 is sandwiched in the first annular leakage preventing groove 213, and the second sealing rings 25 are respectively clamped in the second annular leakage preventing grooves 216. Finally, before the embodiment is placed in the conveying unit of the continuous vacuum coating system (not shown), the liquid phase change material 3 is cooled and solidified into the solid state. The continuous vacuum coating system is used as a carrier tray.

此外,為了防止一待鍍物(圖未示)被放置於該載盤單元2上時產生滑動。較佳地,該基座21還具有一背向該基座21之表面219的承載面217,且該承載面217自其兩相反側緣背向該基座21表面219凸伸出有兩個限位條218。當該載盤單元2在該連續式真空鍍膜系統(圖未示)內被該輸送單元帶動時,藉該等限位條218以令放置在該承載面217上的該待鍍物(圖未示)避免產生滑動。然而,此處需補充說明的是,本發明該實施例並不限於使用該等限位條218以限制該待鍍物移動。於實際實施時,亦可以在該承載面217上使用一導熱膠帶以黏結該待鍍物。 Further, in order to prevent a to-be-plated object (not shown) from being placed on the carrier unit 2, slippage occurs. Preferably, the base 21 further has a bearing surface 217 facing away from the surface 219 of the base 21, and the bearing surface 217 protrudes from the opposite side edges thereof toward the surface 219 of the base 21 Limit bar 218. When the tray unit 2 is driven by the conveying unit in the continuous vacuum coating system (not shown), the limiting strips 218 are used to place the object to be plated on the bearing surface 217 (Fig. Show) avoid slippage. However, it should be additionally noted herein that this embodiment of the invention is not limited to the use of the limit strips 218 to limit the movement of the object to be plated. In actual implementation, a thermal conductive tape may also be used on the bearing surface 217 to bond the object to be plated.

為進一步證實本發明該實施例所採用之相變化物質3此一技術特徵,可有效地利用其本身於相變化過程中所需的熔解潛熱來帶走累積在該待鍍物上的熱能。申請人此處是以本發明該實施例做為承載盤,模擬出其在一濺鍍過程中之溫度對時間的溫度變化曲線圖(見圖5)。如圖5所示,該溫度變化曲線圖的邊界條件(boundary condition)是以實驗量測該待鍍物置於該實施例上進行濺鍍時,在該待鍍物的一頂面之溫度變化,以回推濺鍍熱源的輻射熱流量(radiant heat flux),且該相變化物質3是以正18烷(C18H38)的條件來模擬。此外,為比較本發明該具體例之散熱效果,申請人亦以相同的邊界條件模擬出如圖6所示之溫度變化曲線圖。圖6不同於圖5之處在於,圖6是以一由鋁合金所構成之實心的金屬載盤來模擬。 In order to further confirm the technical feature of the phase change material 3 employed in this embodiment of the present invention, it is possible to effectively utilize the latent heat of fusion required by itself in the phase change process to carry away the heat energy accumulated on the object to be plated. The applicant hereby uses this embodiment of the invention as a carrier disk to simulate a temperature versus time temperature profile during a sputtering process (see Figure 5). As shown in FIG. 5, the boundary condition of the temperature change graph is a temperature change of a top surface of the object to be plated when the object to be plated is placed on the embodiment for sputtering. The radiant heat flux of the sputter heat source is pushed back, and the phase change material 3 is simulated under the condition of n- 18 alkane (C 18 H 38 ). In addition, in order to compare the heat dissipation effect of this specific example of the present invention, the applicant also simulated the temperature change graph shown in FIG. 6 under the same boundary conditions. Fig. 6 differs from Fig. 5 in that Fig. 6 is modeled by a solid metal carrier composed of an aluminum alloy.

此處須補充說明的是,於濺鍍過程中所產生的高溫電漿,會在該待鍍物上累積大量的高溫熱能,此高溫熱能是經由該載盤單元2傳遞給該相變化物質3直接被該相變化物質3所吸收,以作為該相變化物質3於該吸熱過程所需的熱量。由於該吸熱過程包括該自該固態熔化為該液態的相變,且該相變化物質3需額外吸取大量的潛熱以進行相變,導致該吸熱過程所吸收的熱量將遠大於該金屬載盤所吸去的熱量。因此,如圖5與圖6所示,本發明該實施例之承載盤上所放置之該待鍍物的溫度上升量(最高溫約為95℃),明顯小於該金屬載盤上所放置之該待鍍物(最高溫達120℃左右)。由圖5與圖6所顯示的模擬結果可知,該相變化物質3的確進一步提升對該待鍍物的散熱效果。 It should be added here that the high-temperature plasma generated during the sputtering process accumulates a large amount of high-temperature heat energy on the object to be plated, and the high-temperature heat energy is transmitted to the disk unit 2 via the carrier unit 2 The phase change substance 3 is directly absorbed by the phase change substance 3 as the heat required for the phase change substance 3 in the endothermic process. Since the endothermic process includes the phase change from the solid state to the liquid phase, and the phase change material 3 needs to absorb a large amount of latent heat for phase change, the heat absorbed by the endothermic process will be much greater than that of the metal carrier. The heat absorbed. Therefore, as shown in FIG. 5 and FIG. 6, the temperature rise of the object to be plated placed on the carrier disk of the embodiment of the present invention (the highest temperature is about 95 ° C) is significantly smaller than that placed on the metal carrier. The object to be plated (the highest temperature is about 120 ° C). It can be seen from the simulation results shown in FIG. 5 and FIG. 6 that the phase change substance 3 does further improve the heat dissipation effect on the object to be plated.

綜上所述,本發明自冷式移動式承載盤藉由該相變化物質3本身於相變過程中所需的熔解潛熱,以自該載盤單元2吸收熱能,能帶走於濺鍍過程中累積在該待鍍物上的高溫熱能,以藉此提升散熱效果並從而改善鍍膜品質,故確實能達成本發明之目的。 In summary, the self-cooling mobile carrier of the present invention absorbs thermal energy from the carrier unit 2 by the latent heat of fusion required by the phase change material 3 itself during the phase change process, and can be carried away in the sputtering process. The high-temperature heat energy accumulated on the object to be plated is used to enhance the heat dissipation effect and thereby improve the quality of the coating, so that the object of the present invention can be achieved.

惟以上所述者,僅為本發明之實施例而已,當不能以此限定本發明實施之範圍,即大凡依本發明申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。 However, the above is only the embodiment of the present invention, and the scope of the present invention is not limited thereto, that is, the simple equivalent changes and modifications made by the patent application scope and the patent specification of the present invention are still It is within the scope of the patent of the present invention.

2‧‧‧載盤單元 2‧‧‧Loading unit

20‧‧‧密閉空間 20‧‧‧Confined space

21‧‧‧基座 21‧‧‧Base

211‧‧‧基壁 211‧‧‧ base wall

212‧‧‧圍壁 212‧‧‧ wall

213‧‧‧第一環形止漏槽 213‧‧‧First annular stop groove

214‧‧‧凸柱 214‧‧‧Bump

215‧‧‧鎖固孔 215‧‧‧Lock hole

216‧‧‧第二環形止漏槽 216‧‧‧Second annular stop groove

217‧‧‧承載面 217‧‧‧ bearing surface

218‧‧‧限位條 218‧‧‧Limited bars

219‧‧‧表面 219‧‧‧ surface

22‧‧‧封板 22‧‧‧Closed

23‧‧‧第一密封環 23‧‧‧First seal ring

24‧‧‧鎖固件 24‧‧‧Locker

25‧‧‧第二密封環 25‧‧‧Second seal ring

3‧‧‧相變化物質 3‧‧‧ phase change substances

Claims (10)

一種自冷式移動式鍍膜承載盤,包含:一載盤單元,內部形成有一密閉空間;及一相變化物質,填置於該載盤單元的密閉空間中;其中,該相變化物質能自該載盤單元吸收一熱能,以作為至少部分的該相變化物質自一固態熔融成一液態時所需的潛熱,且該相變化物質的熔點為介於18℃至95℃間。 A self-cooling mobile coating carrier tray comprises: a carrier unit having a closed space formed therein; and a phase change substance filled in the sealed space of the carrier unit; wherein the phase change substance is capable of The carrier unit absorbs a thermal energy as at least a portion of the latent heat required to melt the phase change material from a solid state into a liquid state, and the phase change material has a melting point between 18 ° C and 95 ° C. 如請求項1所述的自冷式移動式鍍膜承載盤,其中,該相變化物質是選自一有機類材料與一無機類材料其中一者。 The self-cooling mobile coating carrier according to claim 1, wherein the phase change substance is one selected from the group consisting of an organic material and an inorganic material. 如請求項2所述的自冷式移動式鍍膜承載盤,其中,該有機類材料是一烴類,且該烴類是選自C16至C50的一烷類。 The self-cooling mobile coating carrier according to claim 2, wherein the organic material is a hydrocarbon, and the hydrocarbon is a monoalkyl selected from the group consisting of C 16 to C 50 . 如請求項2所述的自冷式移動式鍍膜承載盤,其中,該無機類材料是選自一含有一結晶水合鹽的組成物,或一熔解鹽。 The self-cooling mobile coating carrier according to claim 2, wherein the inorganic material is selected from a composition containing a crystalline hydrated salt, or a molten salt. 如請求項1所述的自冷式移動式鍍膜承載盤,其中,該載盤單元的密閉空間需大於或等於該相變化物質於該液態時所佔有的體積。 The self-cooling mobile coating carrier tray according to claim 1, wherein the sealing space of the carrier unit needs to be greater than or equal to the volume occupied by the phase change material in the liquid state. 如請求項1所述的自冷式移動式鍍膜承載盤,其中,該相變化物質於該固態時是佔有該密閉空間的80%至90%。 The self-cooling mobile coating carrier according to claim 1, wherein the phase change material occupies 80% to 90% of the sealed space in the solid state. 如請求項1所述的自冷式移動式鍍膜承載盤,其中,該 載盤單元包括一基座,及一封板,該基座具有一基壁與一圍繞該基壁之一周緣以定義出一凹槽的圍壁,該封板蓋設於該圍壁之一表面以封閉該凹槽並定義出該密閉空間。 The self-cooling mobile coating carrier tray according to claim 1, wherein the The carrier unit includes a base and a plate having a base wall and a surrounding wall surrounding a periphery of the base wall to define a groove, the cover plate is disposed on one of the surrounding walls The surface encloses the groove and defines the confined space. 如請求項7所述的自冷式移動式鍍膜承載盤,其中,該載盤單元還包括一第一密封環,該圍壁之表面形成有一第一環形止漏槽,該封板蓋設於該圍壁之表面時,將該第一密封環夾制於該第一環形止漏槽內。 The self-cooling type mobile coated carrier tray according to claim 7, wherein the carrier unit further comprises a first sealing ring, and a surface of the surrounding wall is formed with a first annular leakage preventing groove, and the sealing plate is covered The first sealing ring is clamped in the first annular leak stop groove on the surface of the surrounding wall. 如請求項8所述的自冷式移動式鍍膜承載盤,其中,該載盤單元還包括多數鎖固件,及多數第二密封環,該基座的基壁具有複數自該基壁的一表面朝該封板凸伸而出的凸柱,每一凸柱具有一鎖固孔,及一圍繞該鎖固孔的第二環形止漏槽,該等鎖固件是貫穿該封板,以分別對應鎖固於該等鎖固孔,使該封板與該基座結合,且該封板將該等第二密封環分別對應夾制於該等第二環形止漏槽內。 The self-cooling mobile coated carrier tray of claim 8, wherein the carrier unit further comprises a plurality of locking members, and a plurality of second sealing rings, the base wall of the base having a plurality of surfaces from the base wall a protrusion protruding from the sealing plate, each of the protrusions has a locking hole, and a second annular leakage preventing groove surrounding the locking hole, the fasteners are penetrated through the sealing plate to respectively correspond to The sealing plate is locked to the locking holes, and the sealing plate is coupled to the base, and the sealing plate respectively clamps the second sealing rings into the second annular leakage preventing grooves. 如請求項9所述的自冷式移動式鍍膜承載盤,其中,該基座還具有一背向該基座之表面的承載面,且該承載面自其兩相反側緣背向該基座之表面凸伸出有兩個限位條。 The self-cooling mobile coated carrier tray of claim 9, wherein the base further has a bearing surface facing away from the surface of the base, and the bearing surface faces away from the opposite side edges of the base The surface protrudes from the two limit bars.
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