TW201614863A - Semiconductor light-emitting element - Google Patents
Semiconductor light-emitting elementInfo
- Publication number
- TW201614863A TW201614863A TW104130280A TW104130280A TW201614863A TW 201614863 A TW201614863 A TW 201614863A TW 104130280 A TW104130280 A TW 104130280A TW 104130280 A TW104130280 A TW 104130280A TW 201614863 A TW201614863 A TW 201614863A
- Authority
- TW
- Taiwan
- Prior art keywords
- emitting element
- semiconductor light
- light
- well
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 7
- 230000004888 barrier function Effects 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014205667A JP2016076583A (ja) | 2014-10-06 | 2014-10-06 | 半導体発光素子 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW201614863A true TW201614863A (en) | 2016-04-16 |
Family
ID=55652812
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW104130280A TW201614863A (en) | 2014-10-06 | 2015-09-14 | Semiconductor light-emitting element |
Country Status (6)
Country | Link |
---|---|
JP (1) | JP2016076583A (zh) |
KR (1) | KR20170066365A (zh) |
CN (1) | CN107078189A (zh) |
DE (1) | DE112015003919T5 (zh) |
TW (1) | TW201614863A (zh) |
WO (1) | WO2016056171A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114497300B (zh) * | 2022-01-25 | 2024-02-27 | 泉州三安半导体科技有限公司 | 发光二极管和发光装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6066862A (en) * | 1998-08-31 | 2000-05-23 | United Epitaxy Company, Ltd. | High brightness light emitting diode |
JP2002151734A (ja) * | 2000-09-04 | 2002-05-24 | Sharp Corp | 発光ダイオード |
JP4901453B2 (ja) * | 2006-12-20 | 2012-03-21 | 東芝ディスクリートテクノロジー株式会社 | 半導体発光素子 |
JP2010067903A (ja) * | 2008-09-12 | 2010-03-25 | Toshiba Corp | 発光素子 |
CN101540359B (zh) * | 2009-04-29 | 2010-12-29 | 山东华光光电子有限公司 | 蓝宝石衬底的AlGaInP发光二极管外延片及其制备方法 |
JP2010267813A (ja) * | 2009-05-14 | 2010-11-25 | Toshiba Corp | 発光素子及びその製造方法 |
JP2012222082A (ja) * | 2011-04-06 | 2012-11-12 | Showa Denko Kk | 発光ダイオード、発光ダイオードランプ及び照明装置 |
-
2014
- 2014-10-06 JP JP2014205667A patent/JP2016076583A/ja active Pending
-
2015
- 2015-09-10 DE DE112015003919.8T patent/DE112015003919T5/de not_active Withdrawn
- 2015-09-10 CN CN201580050792.6A patent/CN107078189A/zh active Pending
- 2015-09-10 WO PCT/JP2015/004598 patent/WO2016056171A1/ja active Application Filing
- 2015-09-10 KR KR1020177008368A patent/KR20170066365A/ko unknown
- 2015-09-14 TW TW104130280A patent/TW201614863A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
JP2016076583A (ja) | 2016-05-12 |
KR20170066365A (ko) | 2017-06-14 |
DE112015003919T5 (de) | 2017-05-18 |
CN107078189A (zh) | 2017-08-18 |
WO2016056171A1 (ja) | 2016-04-14 |
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