TW201607379A - Soft pulsing - Google Patents

Abstract

Systems and methods for soft pulsing are described. One of the systems includes a master radiofrequency (RF) generator for generating a first portion of a master RF signal during a first state and a second portion of the master RF signal during a second state. The master RF signal is a sinusoidal signal. The system further includes an impedance matching circuit coupled to the master RF generator via an RF cable to modify the master RF signal to generate a modified RF signal and a plasma chamber coupled to the impedance matching circuit via an RF transmission line. The plasma chamber is used for generating plasma based on the modified RF signal. A statistical measure of the first portion has a positive or a negative slope.

Description

Soft pulsation

The present invention relates to soft pulsation systems and methods.

A system for etching material from a wafer or depositing material onto a wafer includes a generator and a plasma chamber for generating radio frequency (RF) signals. The wafer system is placed in a plasma chamber. The generator supplies the RF signal to the plasma chamber to etch the wafer or deposit material onto the wafer.

Control of etching or deposition can increase wafer yield, save cost, and reduce the time it takes to etch wafers or deposit material onto the wafer. However, etching or deposition is difficult to control.

Embodiments of the invention are produced in the context described above.

The present invention relates to soft pulsation systems and methods.

In various embodiments, one of the methods includes reducing the rate of change of plasma impedance with respect to time, such as decreasing dZ/dt, where Z is the plasma impedance and t is time. A sudden increase or decrease in the rate of change of impedance can cause plasma instability, which can result in loss of control of the etched workpiece or deposited material onto the workpiece. The rate of change of impedance can be reduced by supplying a radio frequency (RF) signal having a statistical value that includes a positive slope or a negative slope to the plasma chamber. For example, an RF signal having an RMS value that increases or decreases over time is supplied to the plasma chamber as compared to an RF signal that will have a root mean square (RMS) value that suddenly increases or decreases. Providing a positive or negative slope provides control over changes in plasma impedance. Control of the impedance change allows the etching or deposition process to be controlled.

In some embodiments, the soft pulsing system includes a primary RF generator for generating a first portion of the primary RF signal during the first state and for generating a second portion of the primary RF signal during the second state. The main RF signal is a sinusoidal signal. The system further includes an impedance matching circuit coupled to the main RF generator by the RF cable and a plasma chamber coupled to the impedance matching circuit by the RF transmission line, the impedance matching circuit for correcting the main RF signal to generate the corrected RF signal . The plasma chamber is used to generate plasma based on the corrected RF signal. The first part of the statistical measurement has a positive slope or a negative slope.

In various embodiments, a method includes generating a first portion of a primary RF signal during a first state and generating a second portion of a primary RF signal during a second state. The method further includes matching the impedance of the load to a source based on the primary RF signal to generate the corrected RF signal. The source contains an RF generator and an RF cable. The load contains an RF transmission line and a plasma chamber. The method includes receiving a corrected RF signal to generate a plasma in a plasma chamber. The first part of the statistical measurement has a positive slope or a negative slope.

In several embodiments, a plasma system includes a first RF generator that produces a first portion of a first RF signal during a first state and a second portion of a first RF signal during a second state. The first RF signal is a sinusoidal signal. The first RF generator is coupled to an impedance matching circuit that is coupled to the plasma chamber. The statistical measurement of the first portion of the first RF signal has a positive slope or a negative slope.

Some of the advantages of the above embodiments include controlling the rate of change in plasma impedance within the plasma chamber. By varying the state of one of the digitally pulsed signals into another state of the digitally pulsed signal, controlling the slope of the statistical measurement can control the rate of change. The slope is controlled to be positive or negative. In some embodiments, the slope is not zero and is a finite value for at least a period of time during a cycle of the digitally pulsed signal. By controlling the slope, changes in plasma impedance can be controlled to control the etch rate or deposition rate or the processing rate of the processing workpiece.

Some other advantages of the embodiments described herein include providing feedback to the processor relating to parameters of the plasma system, such as flow rate, pressure, clearance, and the like. The processor determines whether to add a delay to the pulsated signal provided to the RF generator based on the feedback. The feedback is used to synchronize the reaction time of the mechanical components of the plasma system with the reaction time of the electronic components of the plasma system.

Other aspects will be made clearer from the following detailed description with reference to the drawings.

The following embodiments illustrate systems and methods for performing soft pulsations.

Figure 1A shows an embodiment of Figures a1, a2, a3 and a4 for illustrating soft pulsations of a first variable (e.g., a variable of 1, etc.) or a first parameter (e.g., parameter 1, etc.). Each of Figures a1 through a4 plots the root mean square (RMS) value versus time t, with the root mean square (RMS) value being an example of the first variable. Examples of the first variable include the power of the radio frequency (RF) generator, the reciprocal of the power, the voltage of the RF generator, the current of the RF generator, the reciprocal of the voltage, the reciprocal of the current, the reciprocal of the frequency and frequency of the RF generator. Examples of the first parameter include a gap between the upper electrode of the plasma chamber and the collet, a pressure within the plasma chamber, and a flow rate of one or more process gases flowing into the plasma chamber. The upper electrode, the collet, the plasma chamber, and one or more process gases are further illustrated below.

In some embodiments, the power of the RF generator is the power of the RF signal generated and supplied by the RF generator. In various embodiments, the power of the RF generator is the power of the signal reflected from the plasma chamber toward the RF generator.

In some embodiments, the power of the RF generator is the RF power delivered by the RF generator. For example, the RF power delivered is the difference between the RF power of the RF signal supplied by the RF generator and the RF power of the RF signal reflected from the plasma chamber toward the RF generator.

In various embodiments, the current of the RF generator is the current of the RF signal generated and supplied by the RF generator. In various embodiments, the current of the RF generator is the current from the plasma chamber toward the signal reflected by the RF generator.

In some embodiments, the current of the RF generator is the current delivered by the RF generator. For example, the current delivered is the difference between the current of the RF signal supplied by the RF generator and the current from the plasma chamber to the RF signal reflected back from the RF generator.

In several embodiments, the voltage of the RF generator is the voltage of the RF signal generated and supplied by the RF generator. In various embodiments, the voltage of the RF generator is the voltage of the signal reflected from the plasma chamber toward the RF generator.

In some embodiments, the voltage of the RF generator is the voltage delivered by the RF generator. For example, the voltage delivered is the difference between the voltage of the RF signal supplied by the RF generator and the voltage of the RF signal reflected from the plasma chamber toward the RF generator.

In various embodiments, the frequency of the RF generator is the frequency of the RF signal generated and supplied by the RF generator. In various embodiments, the frequency of the RF generator is the frequency of the signal reflected from the plasma chamber toward the RF generator.

In some embodiments, the frequency of the RF generator is the frequency of the RF signal delivered by the RF generator. For example, the frequency of the transmitted RF signal is the difference between the frequency of the RF signal supplied by the RF generator and the frequency of the RF signal reflected from the plasma chamber toward the RF generator.

The root mean square value has a state S0 and a state S1. States S0 and S1 occur periodically. Each state is related to the power of the RF generator, the frequency of the RF generator, the current of the RF generator, the voltage of the RF generator, the pressure in the plasma chamber, the gap between the upper electrode and the chuck, and into the plasma chamber. A combination of flow rates for various process gases. For example, a first combination of frequency, power, pressure, clearance, and chemical flow rate is used during state S0 and a second combination of frequency, power, pressure, clearance, and chemical flow rate is used during state S1. In certain embodiments, the chemical comprises one or more process gases. To further illustrate, the first frequency value, the power, the pressure, the gap, and the flow rate of the chemical are used in the first combination, the second frequency value is used in the second combination, the same amount of power as the first combination, and The first combination has the same amount of pressure, the same amount of gap as the first combination, and the same flow rate of the same chemical as the first combination. In another illustrative example, a first frequency value, a first power value, a pressure, a gap, and a flow rate of the chemical are used in the first combination, and a second frequency value, a second power value, The same amount of pressure as the first combination, the same amount of gap as the first combination, and the same flow rate of the same chemical as the first combination. In some embodiments, the pressure within the plasma chamber is the wafer area pressure (WAP).

In various embodiments, state S0 is generated when a clock signal, such as a pulsed signal, is pulsed from a high state to a low state, and state S1 is generated when the pulse signal is pulsed from a low state to a high state. The clock signal is in a low state during state S0, and the clock signal is in a high state during state S1. In some embodiments, the clock signal has a 50% duty cycle. In various embodiments, the clock signal has a duty cycle other than 50%, such as 10%, 20%, 60%, 80%, and the like. For example, state S0 occurs at 10% of the clock cycle and state S1 occurs with the remaining 90% of the clock cycle. In some embodiments, the clock signal is generated by a clock source such as a quartz oscillator, processor, or the like.

In several embodiments, the clock signal is in a high state during state S0 and the clock signal is in a low state during state S1.

In some embodiments, any other statistical measure such as the mean, or peak to peak amplitude, or zero to peak amplitude, or median may be used instead of the RMS value as a variable in the graph and for time t Drawing.

Figure a1 shows a fixed value such as a series of amplitudes A1 during state S0, a rise within a positive linear slope during state S1 to have a series of amplitudes A2, and a return to the fixed value at the end of state S1. Positive sawtooth waveform. Falling back to this fixed value occurs during the transition from state S1 to state S0.

In some embodiments, during the state S0, the workpiece is subjected to a different process operation than that performed during the state S1. For example, the workpiece is etched during state S1, and material is deposited onto the workpiece during state S0. The work piece will be explained further below.

In various embodiments, during state S1, the plasma energy of the plasma within the plasma chamber is above an etch rate threshold to maximize workpiece etch during state S1 and increase the ratio of etch rate to deposition rate. Again, during state S0, the ion energy of the plasma within the plasma chamber is below the etch rate threshold to minimize workpiece etch during state S0 and reduce the ratio of etch rate to deposition rate.

In some embodiments, the occurrence time of state S1 or state S0 is greater than 5% of the total duration of states S1 and S0.

Referring to Figure a2, during state S0, Figure a2 has a sinusoidal shape of negative slope during a portion of state S0 and falls to a fixed value during the remainder of state S0. Also, during the state S1, the graph a2 has the fixed value during a portion of the state S1, and then becomes a sinusoidal shape having a positive slope during the remainder of the state S1. Figure a2 has a sinusoidal shape except that the sinusoid is clamped to the bottom of the sinusoid. Figure a2 is clamped in a portion of the period in which the sinusoidal shape has a negative slope and in a portion of the period in which the successive sinusoidal shape has a positive slope. Again, graph a2 has a series of amplitudes A3 during state S0 and a series of amplitudes A4 at state S1.

Graph a3 has a negative linear slope during state S0 and a positive linear slope during state S1. Again, graph a3 has a series of amplitudes A5 during state S0 and a series of amplitudes A6 during state S1.

Graph a4 is clamped to a zero slope during a portion of state S0 and has a negative sinusoidal slope during the remainder of state S0. Again, graph a4 has a positive sinusoidal slope during a portion of state S1 and is clamped during the remainder of state S1 with a zero slope. Figure a4 has a sinusoidal shape except that the sinusoid is clamped to the top of the sinusoid. Figure a4 has a series of amplitudes A7 during state S0 and a series of amplitudes A8 during state S1.

Figure 1B shows an embodiment of additional figures a5, a6 and a7 to illustrate soft pulsation. Each of the graphs a5 to a7 plots the RMS value versus time t, and the RMS value is an example of the first variable. Figure a5 has a fixed value such as a series of amplitudes A9 during state S0 and a zero slope during state S0. Again, Figure a5 increases its RMS value from a low value at state S0 to a high value at state S1. Figure a5 has a series of amplitudes A10 during state S1. Figure a5 has a negative linear slope during state S1 and approaches this fixed value of state S0 at the end of state S1. Figure a5 is referred to herein as a negative sawtooth waveform.

Figure a6 is a sinusoid. Graph a6 has a negative sinusoidal slope during state S0 and a positive sinusoidal slope during state S1. Figure a6 has a series of amplitudes A11 during state S0 and a series of amplitudes A12 during state S1.

Figure a7 is a sinusoidal curve clamped up and down. Graph a7 has a zero slope during the first portion of state S0, a negative sinusoidal slope during the second portion of state S0, and a zero slope during the third remaining portion of state S0. Again, graph a7 has a zero slope during the first portion of state S1, a positive sinusoidal slope during the second portion of state S1, and a zero slope during the third remainder of state S1. Figure a7 has a series of amplitudes A13 during state S0 and a series of amplitudes A14 during state S1.

Figure 1C-1 shows an embodiment of Figures a8 and a9 for explaining soft pulsation. Each of Figures a8 and a9 plots the RMS value versus time t, and the RMS value is an example of the first variable. Figure a8 has a fixed value and a zero slope during state S0, and is converted to a positive linear slope in a curved manner during state S1 after state S0. Also, the graph a8 continues to have a positive linear slope during the state S1, and falls back to the fixed value of the state S0 during the transition period from the state S1 to the state S0. Figure a8 has a series of amplitudes A15 during state S0 and during state S1 and has a series of amplitudes A16. It should be noted that all amplitudes in a series of A15s are the same, such as having a fixed amplitude.

Figure a9 has a negative linear slope during a portion of state S0 and a fixed value and zero slope for the remainder of state S0. Figure a9 increases its RMS value from a low value to a high value during state S1 and has a positive curve slope with an exponential increase. Figure a9 has a series of amplitudes A17 during state S0 and a series of amplitudes A18 during state S1.

Figure 1C-2 shows an embodiment of Figures a8 and a9 for illustrating soft pulsation synchronized with three states S2, S3 and S4. In the state S2, the graph a8 has the same amplitude. Also, during state S3, graph a8 transitions from the amplitude of state S2 to the amplitude of the slope of the positive curve. Again, during state S4, graph a8 transitions from a positive curve slope to a positive linear slope. For example, during the transition from state S3 to state S4, the slope of graph a8 does not change. For another example, during the transition from state S3 to state S4, graph a8 has only minimal slope changes, such as slope changes within a predetermined range, and the like. Still more, for example, during the transition from state S3 to state S4, the slope of graph a8 has continuity. During the transition from state S4 to state S2, graph a8 transitions back to this amplitude of state S2.

During the state S2, the graph a9 has the same amplitude. Also, during state S3, graph a9 has an amplitude with a positive curve slope. During state S4, graph a9 has a negative linear slope. During the transition between states S4 and S2, graph a9 is converted from the amplitude with a negative linear slope to the amplitude of state S2.

Fig. 1D-1 shows an embodiment of the figures a10, a11, a12 and a13 for explaining the soft pulsation. Each of Figures a10 to a13 plots the RMS value versus time t as an example of the first variable. Figure a10 has a fixed value and a zero slope during state S0. Also, the graph a10 has a positive linear slope during the state S1 and a fixed value and a zero slope at the later stage of the state S1. In the transition period in which state S1 transitions to state S0, graph a10 transitions to the fixed value of state S0. A10 is a positive clamp sawtooth waveform similar to the positive zigzag waveform of Fig. a1(1A) except that the positive zigzag waveform clamp of Fig. a10 is located at the top thereof. Figure a10 has a series of amplitudes A19 during state S0 and a series of amplitudes A20 during state S1.

Figure a11 has a fixed value and a zero slope during state S0. Figure a11 transitions from a fixed value to a high value during the transition from state S0 to state S1, and then maintains a fixed value for a period of time during state S1. After this period of time, graph a11 has a negative linear slope during state S1 to reach this fixed value of state S0. Figure a11 has a series of amplitudes A21 during state S0 and a series of amplitudes A22 during state S1. Figure a11 is a mirror image of Figure a10.

In some embodiments, the period of time that graph a11 has a negative linear slope during state S1 is part of state S0 and not part of state S1.

Figure a12 has a fixed value during state S0 and then increases to a high value with a positive curve slope during state S1. Figure a12 continues the positive curve slope for a period of time during state S1 to reach a fixed value after the period of time. Figure a12 has this fixed value and zero slope of state S1 during state S1, which is reduced to this fixed value of state S0 during the transition from state S1 to state S0. Figure a12 has a series of amplitudes A23 during state S0 and a series of amplitudes A24 during state S1. It should be noted that each of the amplitudes in the series of amplitudes A23 is the same.

Figure a13 has a fixed value during state S0 and then has a positive curve slope with an exponential increase during state S1 to increase to a high value. Figure a13 has this high value and zero slope for a period of time after transitioning from the fixed value of state S0 during state S1 and then has a negative linear slope for the remainder of state S1 to reach this fixed value of state S0. Figure a13 has a series of amplitudes A25 during state S0 and a series of amplitudes A26 during state S1. It should be noted that each of the series of amplitudes A25 is the same.

In some embodiments, the period of time that graph a13 has a negative linear slope during state S1 is part of state S0 and not part of state S1.

Figure 1D-2 shows graphs a12 and a13 for explaining the soft pulsations of the first variable synchronized with the three states S2, S3 and S4 of the pulsating signal. During the state S2, the graph a12 has the same amplitude. Again, graph a12 has a positive curve slope during state S3 and a zero slope during state S4. During the transition from state S4 to state S2, an amplitude of the self-zero slope of graph a12 reaches this amplitude of state S2.

In some embodiments, state S4 has a positive curve slope of graph a12 rather than a fixed zero slope in graph a12. For example, during the transition from state S3 to state S4, graph a12 continues to have a positive curve slope instead of transitioning to a fixed zero slope.

During the state S2, the graph a13 has the same amplitude. Again, graph a13 has a positive curve slope with an exponential increase during state S3. Figure a13 has a zero slope for a period of time during state S4 and then transitions to a negative linear slope for the remainder of state S4.

In some embodiments, graph a13 has a zero slope for a period of time during state S4 and then transitions to a negative curve slope for the remainder of state S4.

Figure 1E shows an embodiment of Figures a14, a15 and a16 for illustrating soft pulsation. Each of Figures a14 through a16 plots the RMS value versus time t, and the RMS value is an example of the first variable. Figure a14 has a fixed value and a zero slope during state S0 and then has a negative linear slope after that period of state S0. Figure a14 has a positive linear slope for a period of time during state S1 to reach a fixed value, and then has this fixed value and zero slope after that period of state S1. Figure a14 has a series of amplitudes A27 during state S0 and a series of amplitudes A28 during state S1. Figure a14 is similar to Figure a3 of Figure 1A except that Figure a14 is clamped on top of it.

Graph a15 has a negative linear slope for a period of time during state S0 to reach a fixed value and then has the fixed value and zero slope for the remainder of state S0. Figure a15 has this fixed value for a period of time during state S1 and then transitions to have a positive linear slope after that period of time. Figure a15 has a series of amplitudes A29 during state S0 and a series of amplitudes A30 during state S1. Figure a15 is similar to Figure a3 of Figure 1A except that Figure a15 is clamped to its bottom.

Graph a16 has a fixed value and zero slope during the first portion of state S0, a negative linear slope during the second portion of state S0, and a fixed value and zero slope during the remainder of state S0. Also, the graph a16 has the fixed value that the graph a16 has during the remaining period of the state S0 during the first portion of the state S1. Figure a16 has a positive linear slope during the second portion of state S1 and a fixed value and zero slope during the remainder of state S1. Figure a16 has a series of amplitudes A31 during state S0 and a series of amplitudes A32 during state S1. Figure a16 is similar to Figure a3 of Figure 1A except that Figure a16 is clamped to its top and bottom.

In some embodiments, graph a16 has a zero slope for the remainder of state S0 and then a positive linear slope of state S1 rather than having the fixed value during the first portion of state S1.

Figure 1F shows an embodiment of Figures a17 and a18 for illustrating soft pulsation. Each of Figures a17 through a18 plots the RMS value versus time t, with the RMS value being an example of the first variable. Figure a17 is similar to Figure a of Figure 1E, except that the duration of state S0 is greater than the duration of state S1. Figure a17 has a series of amplitudes A33 during state S0 and a series of amplitudes A34 during state S1. Again, Figure a18 is similar to Figure a of Figure IE except that the duration of state S1 is greater than the duration of state S0. Figure a18 has a series of amplitudes A35 during state S0 and a series of amplitudes A36 during state S1.

In some embodiments, any of the illustrations shown herein are translated to the right or left by a half state.

In various embodiments, any linear slope described herein can be a slope of the curve, such as an exponential slope, a sinusoidal slope, and the like.

In several embodiments, any of the curve slopes described herein can be a linear slope.

2A shows an embodiment of graphs b1, b2, b3, and b4 for illustrating soft pulsations of a second variable (such as a variable 2, etc.) or a second parameter (such as parameter 2, etc.). The example of the second variable is the same as the example of the first variable except that the second variable is a variable of a different type than the first variable. For example, when the first variable is power, the second variable is frequency. For another example, when the first variable is a frequency, the second variable is power. Still more, for example, when the first variable is a voltage, the second variable is a current. The instance of the second parameter is the same as the instance of the first parameter, except that the second parameter is a parameter of a different type than the first parameter. For example, when the first parameter is a gap and the second parameter is a pressure. For another example, when the first parameter is pressure and the second parameter is flow rate.

Figure b1 is similar to Figure a1 (Figure 1A) except that Figure b1 is for the second variable. Figure b1 has a series of amplitudes B1 during state S0 and a series of amplitudes B2 during state S1. Again, Figure b2 is similar to Figure a2 (Figure 1A) except that Figure b2 is for the second variable. Figure b2 has a series of amplitudes B3 during state S0 and a series of amplitudes B4 during state S1. Again, Figure b3 is similar to Figure a3 (Figure 1A) except that Figure b3 is for the second variable. Figure b3 has a series of amplitudes B5 during state S0 and a series of amplitudes B6 during state S1. Again, Figure b4 is similar to Figure a4 (Figure 1A) except that Figure b4 is for the second variable. Figure b4 has a series of amplitudes B7 during state S0 and a series of amplitudes B8 during state S1.

Fig. 2B shows an embodiment of the figures b5, b6 and b7 for explaining the soft pulsation of the second variable. Figure b5 has a series of amplitudes B9 during state S0 and a series of amplitudes B10 during state S1. Again, Figure b6 is similar to Figure a6 (Figure 1B) except that Figure b6 is for the second variable. Figure b6 has a series of amplitudes B11 during state S0 and a series of amplitudes B12 during state S1. Again, Figure b7 is similar to Figure a7 (Figure 1B) except that Figure b7 is for the second variable. Figure b7 has a series of amplitudes B13 during state S0 and a series of amplitudes B14 during state S1.

Fig. 2C-1 shows an embodiment of the figures b8 and b9 for explaining the soft pulsation of the second variable. Figure b8 is similar to Figure a8 (Figure 1C-1) except that Figure b8 is for the second variable. Figure b8 has a series of amplitudes B15 during state S0 and a series of amplitudes B16 during state S1. Each of the series of amplitudes B15 is the same. Further, Fig. b9 is similar to Fig. a9 (Fig. 1C-1) except that Fig. b9 is for the second variable. Figure b9 has a series of amplitudes B17 during state S0 and a series of amplitudes B18 during state S1.

Figure 2C-2 shows an embodiment of Figures b8 and b9 for illustrating soft pulsations of the second variable synchronized with the three states S2, S3 and S4. It should be noted that, in addition to Figure b8, which is used to illustrate the soft pulsation of the second variable, Figure b8 is similar to Figure a8 of Figure 1C-2. Further, Fig. b9 is similar to Fig. 9 of Fig. 1C-2 except that Fig. b9 is used to explain the soft pulsation of the second variable.

2D-1 shows an embodiment of the figures b10, b11, b12 and b13 for explaining the soft pulsation of the second variable. Figure b10 is similar to Figure a10 (Figure 1D-1) except that Figure b10 is for the second variable. Figure b10 has a series of amplitudes B19 during state S0 and a series of amplitudes B20 during state S1. Further, Fig. b11 is similar to Fig. a11 (Fig. 1D-1) except that Fig. b11 is for the second variable. Figure b11 has a series of amplitudes B21 during state S0 and a series of amplitudes B22 during state S1. Further, the figure b12 is similar to the figure a12 (Fig. 1D-1) except that the figure b12 is for the second variable. Figure b12 has a series of amplitudes B23 during state S0 and a series of amplitudes B24 during state S1. Further, the figure b13 is similar to the figure a13 (Fig. 1D-1) except that the figure b13 is for the second variable. Figure b13 has a series of amplitudes B25 during state S0 and a series of amplitudes B26 during state S1.

Figure 2D-2 shows an embodiment of Figures b12 and b13 for illustrating soft pulsations with the second variable of the three states S2, S3 and S4. Figure b12 is similar to Figure a12 of Figure 1D-2, except that Figure b12 plots the second variable versus time. Further, Fig. b13 is similar to Fig. 13 of Fig. 1D-2 except that the second variable is plotted against time in Fig. b13.

Figure 2E shows an embodiment of Figures b14, b15 and b16 for illustrating soft pulsations of the second variable. Figure b14 is similar to Figure a14 (Figure 1E) except that Figure b14 is for the second variable. Figure b14 has a series of amplitudes B27 during state S0 and a series of amplitudes B28 during state S1. Again, Figure b15 is similar to Figure a15 (Figure 1E) except that Figure b15 is for the second variable. Figure b15 has a series of amplitudes B29 during state S0 and a series of amplitudes B30 during state S1. Again, Figure b16 is similar to Figure a16 (Figure 1E) except that Figure b16 is for the second variable. Figure b16 has a series of amplitudes B31 during state S0 and a series of amplitudes B32 during state S1.

Figure 2F shows an embodiment of Figures b17 and b18 for illustrating soft pulsations of the second variable. Figure b17 is similar to Figure a17 (Figure 1F) except that Figure b17 is for the second variable. Figure b17 has a series of amplitudes B33 during state S0 and a series of amplitudes B34 during state S1. Again, Figure b18 is similar to Figure a18 (Figure 1F) except that Figure b18 is for the second variable. Figure b18 has a series of amplitudes B35 during state S0 and a series of amplitudes B36 during state S1.

In various embodiments, the two figures are similar when the two figures have the same shape (eg, waveforms, etc.) and have different or the same statistical measurements. For example, two graphs having a sinusoidal shape are similar in shape, but the peak-to-peak amplitude of the first is greater than the peak-to-peak amplitude of the second.

In some embodiments, one cycle containing state S1 and state S0 has a duration of a few milliseconds (eg, two milliseconds, three milliseconds, etc.). In various embodiments, states S1 and S0 have the same duty cycle. State S1 is immediately after state S0. In several embodiments, state S1 has a different duty cycle, such as a duty cycle that is greater or less than the duty cycle of state S0. State S1 is immediately after state S0.

In several embodiments, during a cycle of a statistical measurement signal (eg, RMS waveform, peak-to-peak amplitude waveform, etc.), a positive slope or a negative slope occurs at least a percentage of the duty cycle (eg, 5 Percentage, 6 percentages, 10 percentages, etc.).

It should be noted that in each of FIGS. 1A to 1F and 2A to 2F, an illustration used herein is a statistical measurement of the RF signal shown in the figure. For example, Figure a1 of Figure 1A is a signal having an RMS value of an RF signal. The signal with RMS value is shown in Figure 1A.

It should be noted that while FIGS. 1A through 1F and 2A through 2F plot RMS values, in some embodiments, the graphs may plot any other statistical measure of the sinusoidal RF signal produced by the RF generator.

3 shows an embodiment of FIGS. 105 and 107, and FIGS. 105 and 107 are used to illustrate the RMS values of the sinusoidal signals generated by the RF generators in FIGS. a1 to a18 and FIGS. b1 to b18. Figure 105 contains a plot of the sinusoidal RF signal 102 produced by the RF generator versus time t, such as a waveform. The sinusoidal RF signal 102 includes a first portion 101 generated during state S0 and a second portion 103 generated during state S1. Figure 106 of Figure 105 is a plot of statistical measurements (e.g., envelope, peak to peak amplitude, etc.) of sinusoidal RF signal 102 versus time t.

Similarly, Figure 107 contains a plot of the sinusoidal RF signal 108 produced by the RF generator versus time t. Figure 107 contains a plot of the measured value 110 of the sinusoidal RF signal 108 versus time t.

4 is used to illustrate that an RF generator generates an RF signal to achieve the first variable shown in any of FIGS. a1 to a18, and another RF generator generates an RF signal to simultaneously achieve any of the figures b1 to b18. The second variable shown in one. For example, a digital signal processor (DSP) of an RF generator controls the RF generator to generate an RF signal for achieving the first variable of graph a1, while the DSP of another RF generator controls the other RF generator An RF signal is generated to achieve the second variable of Figure b2. For another example, a DSP of an RF generator controls the RF generator to generate an RF signal for achieving the first variable of FIG. a16, while a DSP of another RF generator controls the other RF generator to generate An RF signal of the second variable of Figure b10. Still further, for example, an RF generator DSP controls the RF generator to generate an RF signal to achieve a first variable of any of Figures a1 through a18, while another RF generator's DSP controls the other RF The generator generates an RF signal for achieving a second variable of any of Figures b1 through b18. For another example, the DSP of an RF generator provides a first variable as shown in any of Figures a1 to a18 to generate an RF signal having a first variable, and the DSP of the other RF generator is provided in Figures b1 to b18. The second variable, either shown, produces an RF signal having a second variable. Still more, for example, an RF generator DSP provides a first variable having a function as shown in FIG. a3 to generate an RF signal having a first variable as shown in FIG. a3, and an RF generator DSP is further provided with The second variable of the function shown in Figure b5 produces an RF signal having a second variable as shown in Figure b5.

The term processor is used herein to include a special application integrated circuit (ASIC), or a programmable logic device (PLD), or a central processing unit (CPU), or a processor, a microprocessor, or a combination of the above.

Figure 5 shows an embodiment of the figures g1, g2, g3 and g4 for illustrating the similarities between Figures g1 to g4. Figure g1 represents the RMS value, the RMS value is an example of the first variable; Figure g2 represents the RMS value, the RMS value is an example of the second variable; Figure g3 represents an example of the first parameter; Figure g4 represents an example of the second parameter.

Each of the graphs g1 to g4 is plotted on the time axis (time t). For example, states S1 and S0 of graph g1 are represented as a function of times t1, t2, t3, and t4. Similarly, states S1 and S0 of each of graphs g2 through g4 are represented as a function of time t1 through t4.

In various embodiments, each of the first variable, the second variable, the first parameter, and the second parameter have the same type of slope during a state. For example, each of the first variable, the second variable, the first parameter, and the second parameter has a fixed value during state S0, a negative slope during state S0, and a state S1 as shown in Figures g1 through g4 The period has a positive slope or has a fixed value during state S1. Examples of slope types include zero slope, positive slope, and negative slope.

In some embodiments, any one of the first variable, the second variable, the first parameter, and the second parameter has a different type of slope during a state, which is different from the first variable, the second variable, the first The slope of any of the remaining parameters of the one parameter and the second parameter during the state. For example, the first variable has a positive slope during state S1 and the second variable has a negative slope during state S1. Also, in this example, the first variable has a negative slope during state S0 and the second variable has a positive slope during state S0. As another example, the first variable has a fixed slope during state S1 and the second parameter has a negative slope during state S1. Also, in this example, the first variable has a positive slope during state S0 and the second parameter has a fixed slope during state S0.

In some embodiments, any number of variables such as one, two, three, four, six, etc., and any number of parameters can be used to control the plasma chamber.

In various embodiments, graph g1 is a statistical measure of the RF signal produced by the x MHz RF generator, and graph g2 is a statistical measure of the RF signal generated by the y or z MHz RF generator.

It should be noted that although the shapes of the waveforms are shown in FIGS. g1 to g4, in several embodiments, waveforms of other shapes may be applied, as shown in the shapes shown in a1 to a3 and a5 to a18 and the like.

It should be noted that in each of FIGS. 1A to 1F, 2A to 2F, 3, and 5, a digital pulsation signal such as a transistor-transistor logic (TTL) signal, a digital clock signal, and The signal of the active part and the inactive part, the signal with high level and low level, the signal with three levels, and the like.

FIG. 6A shows an embodiment of a plasma system 300 for soft pulsation using digital pulsation signals from host system 312. Examples of host system 312 include computers, such as desktop computers, notebook computers, tablets, and the like. As shown, host system 312 includes a processor and a memory device. Examples of memory devices include read only memory (ROM), random access memory (RAM), or a combination thereof. Other examples of memory devices include flash memory, redundant array of storage disks (RAID), hard disks, and the like.

Host system 312 is coupled to an x-megahertz (MHz) RF generator, a y MHz RF generator, and a z MHz RF generator. Examples of MHz include 2 MHz, 27 MHz, and 60 MHz. Examples of y MHz include 2 MHz, 27 MHz, and 60 MHz. Examples of z MHz include 2 MHz, 27 MHz, and 60 MHz.

The x MHz system is different from y MHz and z MHz. For example, when x MHz is 2 MHz, y MHz is 27 MHz and z MHz is 60 MHz.

Each RF generator includes a DSP, a set of power controllers, a set of automatic frequency modulators (AFTs), and an RF power supply. For example, the x MHz RF generator includes a digital signal processor DSPx, a power controller PCS1x, a power controller PCS0x, a frequency auto-tuner AFTS1x, a frequency auto-tuner AFTS0x, and an RF power supplier PSx. For another example, the y MHz RF generator includes a digital signal processor DSPy, a power controller PCS1y, a power controller PCS0y, a frequency auto-tuner AFTS1y, a frequency auto-tuner AFTS0y, and an RF power supplier PSy. . For example, the z MHz RF generator includes a digital signal processor DSPz, a power controller PCS1z, a power controller PCS0z, a frequency auto-tuner AFTS1z, a frequency auto-tuner AFTS0z, and an RF power supplier. PSz.

The x, y, and z MHz RF generators are connected to an impedance matching circuit (IMC) 302 by an RF cable. For example, an x MHz RF generator is coupled to the IMC 302 by an RF cable 304. The y MHz RF generator is coupled to the IMC 302 by an RF cable 320. The z MHz RF generator is coupled to the RF cable 322 by an RF cable 322. IMC 302.

In various embodiments, an RF cable includes an inner conductor surrounded by an insulating material surrounded by an outer conductor that is further surrounded by a jacket. In several embodiments, the outer guiding system is made of a metal braided wire and the outer casing is made of an insulator material.

The IMC 302 is coupled to the plasma chamber 308 by an RF transmission line 310. In various embodiments, RF transmission line 310 includes a cylinder connected to IMC 302, such as a channel or the like. There is an insulator and an RF rod in the hollow portion of the cylinder. The RF transmission line 310 further includes an RF key, such as an RF band, that is coupled to the RF rod of the cylinder at one end. The other end of the RF key is coupled to a vertically placed cylindrical RF rod that is coupled to the collet 132 of the plasma chamber 308.

The plasma chamber 308 includes a collet 132 and an upper electrode 134. Examples of the collet 132 include an electrostatic chuck (ESC) and a magnetic chuck. The plasma chamber 308 further includes one or more other components (not shown), such as an upper dielectric ring surrounding the upper electrode 134, an upper electrode extension surrounding the upper dielectric ring, and a lower dielectric surrounding the lower electrode of the chuck 132. The ring surrounds the electrode extension under the lower dielectric ring, the upper electrode exclusion region (PEZ) ring, the lower PEZ ring, and the like. The upper electrode 134 is located on the opposite side of the collet 132 and faces it. The workpiece 324 such as a semiconductor substrate, a semiconductor substrate having an integrated circuit, a wafer, or the like is supported on the upper surface 327 of the chuck 132. The lower surface of the upper electrode 134 faces the upper surface 327 of the collet 132.

Various processes are performed on the workpiece 324 during fabrication, such as chemical vapor deposition, cleaning, deposition, sputtering, etching, etching, ion implantation, photoresist stripping, and the like. Integrated circuits (such as ASICs, PLDs, etc.) are developed on the work piece 324 and are used in various electronic items (such as mobile phones, tablets, smart phones, computers, notebook computers, network devices, etc.). The lower electrode and the upper electrode 134 are each made of a metal such as aluminum, aluminum alloy, copper or the like. The upper electrode 132 is coupled to a reference voltage (eg, a ground voltage, a fixed voltage, etc.).

The processor of host system 312 generates a digital pulsed signal 326, which is a digital signal having two states. For example, a digital pulsed signal has a zero slope or a finite slope. In some embodiments, a clock oscillator (such as a quartz oscillator, etc.) is used in place of the host system 326 to generate an analog clock signal, which is converted to a digital pulsed signal 326 by an analog to digital converter.

The digital pulsed signal 326 has two states, state S1 and state S0. In various embodiments, the digital pulsed signal 326 is a TTL signal. Examples of states S1 and S0 include an on state and a off state, a state having a digit value of 1 and a state having a digit value of 0, and a high state and a low state, and the like. For example, state S1 is a high state and state S0 is a low state. As another example, state S1 has a digit value of one and state S0 has a digit value of zero. Still more, for example, state S1 is an on state and state S0 is a off state.

The DSPx receives the digital pulsed signal 326 and recognizes the state of the digital pulsed signal 326. For example, DSPx determines that digital pulsed signal 326 has a first amplitude (eg, a digital value 1, a high state, etc.) during a first portion of the duty cycle and a second amplitude during a second portion of the duty cycle (eg, Digital value 0, low state, etc.). The DSPx determines that the digital pulsed signal 326 has a state S1 during the first portion and a state S0 during the second portion. An instance of state S0 includes a low state, a state with a value of 0, and a closed state. An instance of state S1 includes a high state, a state with a value of 1, and an open state. Still further, for example, DSPx compares the amplitude of the digital pulsed signal 326 with a pre-stored value to determine that the amplitude of the digitally pulsed signal 326 during the first portion is greater than the pre-stored value and is pulsed during the second portion. The amplitude during the state 0 of the signal 326 is not greater than the pre-stored value. In an embodiment using a clock oscillator, the DSPx receives an analog clock signal from the clock oscillator, converts the analog signal to a digital form, and then recognizes the two states S0 and S1.

When the state of the digital pulsed signal 326 is identified as S1, the DSPx provides a power value Px1 to the power controller PCS1x and a frequency value Fx1 to the AFTS1x. An example of the power value Px1 includes the RMS value of the state S1 of any of the signals shown in FIGS. a1 to a18. For example, the power value Px1 can be any of the following: amplitude A2, A4, A6, A8, A10, A12, A14, A16, A18, A20, A22, A24, A26, A28, A30, A32, A34, and A36. (Figs. 1A, 1B, 1C-1, 1D-1 and 1E to 1F). An example of the frequency value Fx1 includes the RMS value of the state S1 of any of the signals shown in FIGS. b1 to b18. For example, the frequency value Fx1 can be any of the following: amplitude B2, B4, B6, B8, B10, B12, B14, B16, B18, B20, B22, B24, B26, B28, B30, B32, B34 and B36 (Figs. 2A, 2B, 2C-1, 2D-1 and 2E to 2F).

Also, when the state is identified as S0, the DSPx supplies a power value Px0 to the power controller PCS0x and a frequency value Fx0 to the AFTS0x. An example of the power value Px0 includes the RMS value of the state S0 of any of the signals shown in Figures a1 to a18. For example, the power value Px0 can be any of the following: amplitudes A1, A3, A5, A7, A9, A11, A13, A15, A17, A19, A21, A23, A25, A27, A29, A31, A33, and A35 ( 1A, 1B, 1C-1, 1D-1 and 1E to 1F). An example of the frequency value Fx0 includes the RMS value of the state S0 of any of the signals shown in Figures b1 to b18. For example, the frequency value Fx0 can be any of the following: amplitudes B1, B3, B5, B7, B9, B11, B13, B15, B17, B19, B21, B23, B25, B27, B29, B31, B33, and B35 (Figs. 2A, 2B, 2C-1, 2D-1 and 2E to 2F).

It should be noted that in some embodiments, the AFTs of the RF generator and the power controller of the RF generator are one or more logic blocks. For example, the power controllers PCS1x and PCS0x and the automatic frequency modulators AFTS1x and AFTS0x are logic blocks (such as modulation loops, etc.) and are part of a computer program that is executed by the DSPx. In some embodiments, the computer program is embodied in a non-transitory computer readable medium, such as a memory device.

In one embodiment, a hardware device (such as a hardware controller, ASIC, PLD, etc.) is used in place of the logic blocks of the RF generator. For example, replace the power controller PCS1x with a hardware controller, replace the power controller PCS0x with another hardware controller, replace the AFTS1x with another hardware controller, and replace the AFTS0x with another hardware controller.

After receiving the power value Px1, the power controller PCS1x determines a complex power value for generating a portion of one of the sinusoidal signals during the state S1 and having the RMS value Px1 during the state S1. Similarly, after receiving the power value Px0, the power controller PCS0x determines the complex power value used to generate a portion of one of the sinusoidal signals during state S0 and having the RMS value Px0 during state S0.

Further, after receiving the frequency value Fx1, the frequency auto-tuner AFTS1x determines a complex frequency value for generating a portion of one of the sinusoidal signals during the state S1 and having the RMS value Fx1 during the state S1. Similarly, after receiving the frequency value Fx0, the frequency auto-tuner AFTS0x determines the complex frequency value used to generate a portion of one of the sinusoidal signals during state S0 and having the RMS value Fx0 during state S0.

During state S1, power controller PCS1x provides the complex power value generated from RMS power value Px1 to RF power source PSx. Also, during the state S1, the frequency auto-tuner AFTS1x supplies the complex frequency value generated from the RMS frequency value Fx1 to the RF power source PSx. During state S1, RF power source PSx generates an RF signal, such as a portion of RF signal 102 (FIG. 3), RF signal 108 (FIG. 3), etc., having the complex power value generated from the RMS power value Px1 and having The complex frequency value generated from the RMS frequency value Fx1.

Similarly, during state S0, power controller PCS0x provides the complex power value generated from RMS power value Px0 to RF power source PSx. Also, during state S0, the frequency auto-tuner AFTS0x supplies the complex frequency value generated from the RMS frequency value Fx0 to the RF power source PSx. During state S0, the RF power source PSx generates the remainder of the RF signal (eg, RF signal 102 (FIG. 3), RF signal 108 (FIG. 3)), etc., having the complex power value generated from the RMS power value Px0. And having the complex frequency value generated from the RMS frequency value Fx0. The RF signal generated by the RF generator based on the complex power value and/or the complex frequency value is a sinusoidal signal, such as a non-fixed value, a non-exponential signal. The RF signal generated by the x MHz RF generator is supplied to the IMC 302 by the RF cable 304.

The DSPx provides the digital pulsed signal 326 to the DSPy of the y MHz RF generator and the DSPz of the z MHz RF generator. When the x MHz RF generator provides digitally pulsed signals 326 to the y and z MHz RF generators, the x MHz RF generator has the role of the primary RF generator and the DSPx has the role of the primary controller. The y and z MHz RF generators, after receiving the digital pulsed signal 326, generate a sinusoidal RF signal in a manner similar to the x MHz RF generator generating an RF signal based on the digital pulsed signal 326. The RF signal generated by the y MHz RF generator is supplied to the IMC 302 via the RF cable 320, and the RF signal generated by the z MHz RF generator is supplied to the IMC 302 via the RF cable 322. Examples of RF signals generated by a y MHz RF generator or a z MHz RF generator include RF signals having amplitudes A1 and A2 (Fig. 1A), or amplitudes A3 and A4 (Fig. 1A), or amplitudes A5 and A6. (Fig. 1A), or amplitudes A7 and A8 (Fig. 1A), or amplitudes A9 and A10 (Fig. 1B), or amplitudes A11 and A12 (Fig. 1B), or amplitudes A13 and A14 (Fig. 1B), or amplitudes A15 and A16 (Fig. 1C-1), or amplitudes A17 and A18 (Fig. 1C-1), or amplitudes A19 and A20 (Fig. 1D-1), or amplitudes A21 and A22 (Fig. 1D-1), or amplitudes A23 and A24 (Fig. 1D-1), or amplitudes A25 and A26 (Fig. 1D-1), or amplitudes A27 and A28 (Fig. 1E), or amplitudes A29 and A30 (Fig. 1E), or amplitudes A31 and A32 (Fig. 1E), or amplitude A33 With A34 (Fig. 1F), or amplitudes A35 and A36 (Fig. 1F).

The IMC 302 receives RF signals from the x, y, and z MHz RF generators and matches the impedance coupled to one of the IMC 302 loads and the impedance coupled to one of the sources of the IMC 302 to produce a modified RF signal 306. For example, IMC 302 matches the impedance of RF transmission line 310 and plasma chamber 308 with the impedance of x MHz RF generator, y MHz RF generator, z MHz RF generator, RF cable 304, RF cable 320, and RF cable 322. To generate a corrected RF signal 306. As another example, IMC 302 matches the impedance of any component of the plasma system 300 coupled to IMC 302 as a load and the impedance of any component coupled to the plasma system 300 of IMC 302 as a source to produce a corrected RF signal 306. . Examples of components that are coupled to the IMC 302 as a load include an RF transmission line 310, a plasma chamber 308, and any other components (such as filter elements, etc.) that are on the side of the plasma chamber 308 of the IMC 302 and that are coupled to the IMC 302. Examples of components coupled to IMC 302 as a source include x, y, and z RF generators, RF cables 304, 320, and 322, and other components coupled to the side of the x, y, and z MHz RF generators of IMC 302 ( Such as filter pieces, etc.).

The IMC 302 sends the corrected signal 306 to the collet 132 via the RF transmission line 310. When one or more process gases are supplied between the upper electrode 134 and the collet 132 and when the modified RF signal 306 is supplied to the collet 132, the one or more process gases are ignited to be within the plasma chamber 308. Produce plasma.

In various embodiments, the upper electrode 132 includes one or more gas inlets (eg, holes, etc.) coupled to a central gas feed (not shown). The central gas feed receives the one or more process gases from a gas supply (eg, a gas reservoir, etc.). Examples of process gases include oxygen containing gases such as O ₂ . Other examples of process gases include fluorine-containing gases such as carbon tetrafluoride (CF ₄ ), sulfur hexafluoride (SF ₆ ), hexafluoroethane (C ₂ F ₆ ), and the like.

Figure 6B is an illustration of one embodiment of a plasma system 350 for applying soft pulsation to a complex variable. System 350 includes x, y, and z MHz RF generators, IMC 302, and plasma chamber 308. The plasma system 350 further includes a phase delay circuit 138, a gap control system 362, a pressure control system 364, and a flow control system 366.

In some embodiments, a processor (such as a processor of host system 312, etc.) replaces phase delay circuit 138 to generate a phase delay of digitally pulsed signal 326.

The gap control system 362 includes a gap processor 130, a gap driver GDS1 of state S1, and a gap driver GDS0 of state S0. Further, the pressure control system 364 includes a pressure processor 140, a pressure control PCS1 of the state S1, and a pressure control PCS0 of the state S0. Further, the flow control system 366 includes a flow processor 146, a flow driver FDS1 of state S1, and a flow driver FDS0 of state S0.

In some embodiments, the driver or controller includes one or more transistors for generating a current signal.

The plasma system 350 also includes a motor 136, a motor 144 coupled to the gap control system 362 and an upper electrode 134, and a motor 144 coupled to the restriction ring portions 142A and 142B of the plasma chamber 308 and a pressure control system 364. Motor 150 is coupled to valve member 148 and flow control system 366. It should be noted that the restriction ring portion 142A and the restriction ring portion 142B form one or more restriction rings 142.

Motor 136, upper electrode 134, and/or collet 132 are sometimes referred to herein as gap control mechanical elements. Again, motor 144 and/or restraint ring 142 are sometimes referred to herein as pressure control mechanical components. Again, motor 150, gas source GS, and/or valve member 148 are sometimes referred to herein as flow control mechanical components.

In some embodiments, motor 136 is coupled to collet 132 rather than upper electrode 134 to move collet 132 instead of upper electrode 134. In various embodiments, one motor is coupled to the collet 132 and the other motor is coupled to the upper electrode 132, and both motor systems are coupled to the gap control system 362.

In various embodiments, the confinement ring 142 is made of a conductive material such as tantalum, polycrystalline germanium, tantalum carbide, boron carbide, ceramic, aluminum, and the like. In general, the confinement ring 142 surrounds a volume 382 of one of the plasma chambers 308 in which plasma will be formed. In various embodiments, in addition to the confinement ring 142, the volume 382 is surrounded by an upper electrode 134, a collet 132, one or more insulators interposed between the electrode and the electrode extension, and between the upper and lower electrode extensions. Rings (such as dielectric rings, etc.) are defined.

An example of a motor includes an electric machine that converts electrical energy into mechanical energy. Other examples of motors include alternating current (AC) motors. Other embodiments of the motor include a machine having a moving portion (such as a rotor) and a fixed portion (such as a stator). There is a gap between the stator and the rotor.

Examples of valve members include devices that regulate, direct, or control the flow of a gas or liquid by opening, closing, or partially obstructing a passage, such as a passage of a casing. Other examples of valve components include hydraulic valves, manual valves, solenoid valves, electric valves, and pneumatic valves.

The digital pulsed signal 326 is generated by the processor of the host system 312 and supplied to the phase delay circuit 138. The phase delay circuit 138 receives the digital pulsed signal 326 and delays the digitally pulsed signal 326 by a predetermined phase to produce a modified pulsed signal 368. The phase delay is provided to the digital pulsed signal 326 such that the mechanical components of the plasma system 350 (such as the electrode 134, the collet 132, the valve member 148, the motor 136, the motor 144, the motor 150, the limit ring 142, etc.) have time to respond The digital pulsed signal 326. Phase delay circuit 138 is coupled between host system 312 and the DSPs of the x, y and z MHz RF generators. The phase delay circuit 138 delays the phase of the digitally pulsed signal 326 to produce a modified pulsed signal 368, such that the mechanical components of the plasma system 350, such as DSPs, RF power supplies, power controllers, AFTs, etc., have more The time responds to the digital pulsed signal 326. The modified pulsating signal 368 is provided to the DSPs of the x, y, and z MHz RF generators.

In some embodiments, the electrical component responds to the pulsating signal when the electrical component produces an output signal based on the pulsating signal input to the electrical component. In various embodiments, the mechanical component responds to the pulsating signal when the electrical component performs a mechanical action such as rotation, movement, sliding, offsetting, closing, opening, etc. in response to the pulsating signal.

When the DSPx receives the modified pulsed signal 368, the x MHz RF generator generates an RF signal that is synchronized with the modified pulsed signal 368. For example, at the point in time when the state of the modified pulsating signal 368 transitions from state S0 to state S1, the envelope of one of the RF signals changes from a negative slope to a positive slope or to a zero slope. For another example, at a point in time when the state of the modified pulsed signal 368 transitions from state S1 to state S0, the statistical measurement of a portion of the RF signal changes from a positive slope to a negative slope or to a zero slope. Similarly, when DSPy receives the modified pulsed signal 368, the y MHz RF generator generates an RF signal synchronized with the modified pulsed signal 368; when DSPz receives the modified pulsed signal 368, z The MHz RF generator generates an RF signal that is synchronized with the modified pulsed signal 368.

It should be noted that the x MHz RF generator is not the primary generator in the plasma system 350. The x MHz RF generator of the plasma system 350 does not generate or provide digital pulsating signals 326 to the y and z MHz RF generators. For example, DSPx does not provide digitally pulsed signals 326 to DSPy or to DSPz.

In various embodiments, the phase delay added by phase delay circuit 138 is used to shift digitally pulsed signal 326 to the right on time t-axis to produce corrected pulsed signal 368 to further The mechanical component has more time to control the process gas flow into the plasma chamber 308, control the gap between the upper electrode 134 and the collet 132, and/or control the pressure within the plasma chamber 308.

In several embodiments, the digital pulsed signal 326 lags behind the modified pulsed signal 368 in time to make the mechanical component than the electrical component x MHz RF generator, y MHz RF generator, z MHz RF generator The RF cables 304, 320, and 322, the IMC 302, and the RF transmission line 310 have more time to respond to the digital pulsed signal 326. Examples of electrical components include DSPs for RF generators, RF power supplies for RF generators, transistors, resistors, capacitors, inductors, cables, wires, tapes, spoons, rods, and the like.

The gap processor 130 receives the digital pulsed signal 326 to identify states S1 and S0 from the digital pulsed signal 326. For example, gap processor 130 identifies states S1 and S0 from digital pulsed signal 326 in a manner similar to the manner in which the DSPs identify states S1 and S0 from digital pulsed signals 326. For another example, the gap processor 130 recognizes that the digital pulsed signal 326 has a first amplitude (eg, a digital value 1, a high state, etc.) during a first time period and a second amplitude (eg, a digital value during a second time period) 0, low state, etc.).

After determining that the state is S1, the gap processor 130 recognizes the value of a portion of a parameter signal from the memory device (not shown) coupled to the gap processor 130 for the state S1 for application to the upper electrode 134 and the chuck 132. The gap between the parameters is, for example, a signal from the first variable of one of Figures a1 to a18 (Figs. 1A, 1B, 1C-1, 1D-1, 1E to 1F), from Figs. b1 to b18 (Fig. A signal of the second variable of one of 2A, 2B, 2C-1, 2D-1, 2E to 2F). On the other hand, after determining that the state is S1, the gap processor 130 recognizes the value of a portion of a parameter signal from the memory device (not shown) coupled to the gap processor 130 for the state S0 to apply to the upper electrode 134 and The gap between the chucks 132, such as a signal from the first variable of one of the figures a1 to a18 (Figs. 1A, 1B, 1C-1, 1D-1, 1E to 1F), from the figure b1 A signal to the second variable of one of b18 (Figs. 2A, 2B, 2C-1, 2D-1, 2E to 2F). The gap processor 130 supplies the value of the parameter signal to be generated during the state S1 to the gap driver GDS1, and supplies the value of the parameter signal to be generated during the state S0 to the gap driver GDS0.

The gap driver GDS1 generates a portion of the parameter signal having one of the values received from the gap processor 130 during state S1 and provides this portion to the motor 136. Further, the gap driver GDS0 generates the remaining portion of the parameter signal having the value received from the gap processor 130 during the state S0 and supplies the remaining portion to the motor 136. The motor 136 operates, for example, the rotor according to the frequency and power received from the portion of the parameter signal of the gap driver GDS1 during state S1, and according to the frequency of the remaining portion of the parameter signal received from the gap driver GDS1 during state S0. Power operation. When the motor 136 is operated based on the frequency and power of a portion of a parameter signal during the state S1, a gap such as the distance between the electrode 134 and the collet 132 is changed according to the frequency and power. Again, when motor 136 is operating based on the frequency and power of the remainder of a parameter signal during state S0, the distance between upper electrode 134 and collet 132 changes according to the frequency and power.

In a manner similar to that described for gap processor 130, pressure processor 140 receives digital pulsed signals 326 to identify states S1 and S0 from digitally pulsed signals 326. After determining that the state of the digital pulsed signal 326 is S1, the pressure processor 140 recognizes the value of a portion of a parameter signal from the memory device coupled to the pressure processor 140 for the state S1 to apply to the limit ring 142. The parameter signal is, for example, a signal from the first variable of one of Figures a1 to a18 (Figs. 1A, 1B, 1C-1, 1D-1, 1E to 1F), from Figs. b1 to b18 (Figs. 2A, 2B, A signal of the second variable of one of 2C-1, 2D-1, 2E to 2F). On the other hand, after determining that the state is S0, the pressure processor 140 recognizes the value of a portion of a parameter signal from the memory device coupled to the pressure processor 140 for the state S0 to apply to the limit ring 142, the parameter signal. For example, a signal from the first variable of one of Figures a1 to a18 (Figs. 1A, 1B, 1C-1, 1D-1, 1E to 1F), from Figs. b1 to b18 (Fig. 2A, 2B, 2C-1) a signal of the second variable of one of 2D-1, 2E to 2F), and the like. During state S1, pressure processor 140 provides a value for one of the parameters of state S1 to pressure control PCS1. Also, during state S0, pressure processor 140 provides a value for one of the parameter signals for state S0 to pressure control PCS0.

During state S1, pressure controller PCS1 generates a current signal having a value of a parameter signal and provides the current signal to motor 144. Also, during state S0, the pressure controller PCS0 generates a current signal having a value of a parameter signal and provides the current signal to the motor 144. Motor 144 operates at a frequency and power of the value of one of the parameter signals received during state S1. The operation of motor 144 changes the pressure within volume 382 based on the frequency and power of one of the parameter signals during state S1, changing the vertical position of limit ring 142 relative to volume 382 of plasma chamber 308. Similarly, motor 144 operates at the frequency and power of the value of one of the parameter signals received during state S0. The operation of motor 144 changes the pressure within volume 382 based on the frequency and power of one of the parameter signals during state S0, changing the vertical position of limit ring 142 relative to volume 382 of plasma chamber 308.

In various embodiments in which the motor 144 is coupled to the restraining ring 142 from the bottom side of the confinement ring 142, the change in the vertical position of the confinement ring 142 is to move the restriction ring 142 up or down in the volume 382. The confinement ring 142 is moved up to cover a larger volume 382 and is moved down to cover a smaller amount of volume 382.

In several embodiments, the motor 144 is coupled to the confinement ring 142 from the upper side of the confinement ring 142. The confinement ring 142 is moved down to cover a larger portion of the volume 382 and up to cover a smaller portion of the volume 382.

In some embodiments, the motor 144 is coupled to the restraining ring 142 by a rod and the restraining ring 142 extends into the groove of the rod and is coupled to the groove of the rod. When the rotor of the motor 144 rotates, the rod projects or retracts from the motor to change the vertical position of the limit ring 142. The rod is connected to the motor.

Moreover, the flow processor 146 receives the digital pulsed signal 326 and recognizes the states S1 and S0 of the digital pulsed signal 326 in a manner similar to the state S1 and S0 of the digitally pulsed signal 326. After determining that the state is S1, the flow processor 146 recognizes the value of a portion of a parameter signal from the memory device coupled to the flow processor 146 for the state S1 to apply to the valve member 148. The parameter signal is, for example, from the figure a1. a signal to the first variable of one of a18 (Figs. 1A, 1B, 1C-1, 1D-1, 1E to 1F), from Figs. b1 to b18 (Figs. 2A, 2B, 2C-1, 2D-1, A signal of the second variable of one of 2E to 2F). On the other hand, after determining that the state is S0, the flow processor 146 recognizes the value of a portion of a parameter signal from the memory device coupled to the flow processor 146 for the state S0 to apply to the valve member 148, such as the parameter signal. Is a signal from the first variable of one of Figures a1 to a18 (Figs. 1A, 1B, 1C-1, 1D-1, 1E to 1F), from Figs. b1 to b18 (Figs. 2A, 2B, 2C-1, A signal of the second variable of one of 2D-1, 2E to 2F), and the like. During state S1, flow processor 146 provides a value for a parameter signal for state S1 to flow driver FDS1. Again, during state S0, flow processor 146 provides a value for one of the parameter signals for state S0 to flow driver FDS0.

During state S1, the flow driver FDS1 generates a current signal to drive the motor 150 based on the frequency value and the power value of one of the parameter signals of the state S1. Also, during state S0, the flow driver FDS1 generates a current signal to drive the motor 150 based on the frequency value and the power value of the remaining portion of one of the state signals S0. The motor 150 is operated to change the position of the valve member 148 within the housing (e.g., housing, tube, conduit, etc.) that houses the valve member 148 to open or close. The position of the valve member 148 is varied according to the frequency and power of one of the parameter signals generated during the state S1 and the frequency and power of the remainder of the parameter signal generated during the state S0. The change in position of valve member 148 during state S1 or state S0 may change (eg, increase, decrease, etc.) the flow rate of one or more process gases within inflow volume 382. A mixture of process gases or process gases is stored in gas source GS and supplied to plasma chamber 308 by passage of the casing. The gas source GS is coupled to the plasma chamber 308 by a jacket. When one or more process gases are supplied to the volume 382 and the chuck 132 receives the corrected RF signal 306 via the RF transmission line 310, a plasma is generated in the plasma chamber 308. The plasma is used to perform one or more of the above process operations.

In some embodiments, the motor 150 is coupled to the valve member 148 by a lever to change the position of the valve member using the rotation of the rotor of the motor 150.

In various embodiments, other mechanical components (such as current drivers, etc.) may be used in place of motor 150 to control valve member 148. For example, valve member 148 is a solenoid valve and flow drivers FDS1 and FDS0 are current drivers for states S1 and S0. In such embodiments, when the flow processor 146 receives a portion of the digital pulsed signal 326 during state S1, the flow processor 146 recognizes the value of a parameter signal from the memory device of the flow control system 366. The value of the signal is, for example, the value of any of the signals of the first variable shown in Figures a1 to a18 (Figs. 1A, 1B, 1C-1, 1D-1, 1E to 1F), from Figs. b1 to b18 ( The value of the signal of the second variable of one of FIGS. 2A, 2B, 2C-1, 2C-2, 2E to 2F), and the like. After identifying the value of the parameter signal during state S1, flow processor 146 generates an instruction signal indicating that flow driver FDS1 is generating a portion of one of the parameter signals during state S1. Similarly, when the flow processor 146 receives a portion of the digital pulsed signal 326 during the state S0, the flow processor 146 recognizes the value of a parameter signal from the memory device of the flow control system 366, such as a map. Any of the signals of the first variable shown in a1 to a18 (Figs. 1A, 1B, 1C-1, 1D-1, 1E to 1F), from Figs. b1 to b18 (Figs. 2A, 2B, 2C-1) The signal of the second variable of one of 2C-2, 2E to 2F), and the like. After recognizing the value of the parameter signal of state S0, flow processor 146 generates an instruction signal instructing flow driver FDS0 to generate a portion of the parameter signal having one of the values during state S0. The flow driver FDS1 sends a portion of the parameter signal having one of the current values generated during the state S1 to the valve member 148, and the flow driver FDS0 sends a portion of the parameter signal having the current value generated during the state S0 to the valve. Piece 148. After receiving the current value during state S1, valve member 148 opens or closes according to the current value to control one or more process gas flows from gas source GS into volume 382 of plasma chamber 308. Similarly, after receiving the current value during state S0, valve member 148 opens or closes according to the current value to control one or more process gas flows from gas source GS into volume 382 of plasma chamber 308.

In some embodiments, any number of gas sources are used in the plasma system 350. Each gas source stores a different process gas. For example, one gas source stores a fluorine-containing gas and the other gas source stores an oxygen-containing gas. Each gas source is connected to the plasma chamber 308 by a jacket to supply a gas such as a process gas, an inert gas, or the like to the plasma chamber 308. The casing includes a valve member that is coupled to the motor and is controlled by the motor, and the motor is further coupled to and controlled by the flow drives FDS1 and FDS0.

FIG. 7 shows an embodiment of a plasma system 400 for utilizing a primary RF generator to generate a digital pulsed signal 326 and a modified pulsed signal 368. In addition to being in the plasma system 400 (non-host system 312), the x MHz RF generator generates a pulsed signal 326 and a modified pulsed signal 368 received by the y MHz RF generator and the z MHz RF generator. The operation of the plasma system 400 is similar to the operation of the plasma system 350 (Fig. 6B). For example, the clock source of the DSPx or x MHz RF generator generates a digital pulsed signal 326, and the digital pulsed signal 326 is transmitted to phase delay circuit 138. Phase delay circuit 138 produces a modified pulsed signal 368 from digitally pulsed signal 326. For another example, the clock oscillator of the x MHz RF generator generates an analog signal, which is converted into a digital pulsed signal 326 by an analog-to-digital converter of the x MHz RF generator, and the digitally pulsed signal 326 is Transmitted to phase delay circuit 138 to produce a modified pulsed signal 368.

The x MHz RF generator provides the modified pulsed signal 368 to the y MHz RF generator and to the z MHz RF generator, and the x MHz RF generator provides the digital pulsed signal 326 to the gap control system 362, Pressure control system 364 and flow control system 366. For example, phase delay circuit 138 provides modified pulsed signal 368 to DSPy and DSPz, and DSPx provides digital pulsed signal 326 to gap processor 130, WAP processor 140, and flow processor 146. The remaining operation of the plasma system 400 is similar to the operation of the plasma system 350 described above.

In some embodiments, the x MHz RF generator receives a digital pulsed signal 326 from a host system 312 coupled to the x MHz RF generator. The x MHz RF generator generates a modified pulsed signal 368 from the digital pulsed signal 326 and provides the modified pulsed signal 368 to DSPy and DSPz.

In various embodiments, phase delay circuit 138 receives digital pulsed signal 326 from host system 312 to produce corrected pulsed signal 368. Phase delay circuit 138 provides modified pulsed signal 368 to the x MHz RF generator. The x MHz RF generator provides the modified pulsed signal 368 to DSPy and DSPz.

FIG. 8 shows an embodiment of a plasma system 410 for illustrating the timing of using the feedback system to determine the corrected pulsed signal 368 for the next state. Plasma system 410 is similar to plasma system 350 (FIG. 6B) except that plasma system 410 includes a feedback system.

The feedback system includes a gap sensor 412, a flow sensor 414, and a pressure sensor 416. Examples of the gap sensor 412 include an electric radiation detector, an optical sensor, an inductive detector, a capacitive detector, a linear variable differential transformer (LVDT) sensor, and the like. In some embodiments, the gap sensor 412 is external to the plasma chamber 308 and optically coupled to the volume 382 to determine the vertical distance of the gap between the electrode 134 and the collet 132 as above. Examples of the flow sensor 414 include a flow rate sensor that measures the flow rate of the process gas in standard cubic centimeters per minute (sccm), an optical flow meter, a Coriolis flowmeter, a mass flow meter, and a thermal mass flow. Sensors, volume sensors, pressure flow meters, etc. Flow sensor 414 is coupled to the interior volume of the casing by an orifice having a casing (e.g., a gas line or the like) in which valve member 148 is located. Pressure sensor 416 measures the pressure of one or more gases and/or plasma within plasma chamber 308. Examples of pressure sensor 416 include absolute pressure sensors, vacuum pressure sensors, differential pressure sensors, resonant pressure sensors, thermal pressure sensors, optical pressure sensors, and the like. In certain embodiments, pressure sensor 416 is external to volume 382 to measure the pressure of one or more gases and/or plasma within volume 382.

In an embodiment using a multi-gas source, the flow sensor is coupled to a casing of a gas source to measure the flow rate of gas flowing from the gas source to the plasma chamber 308. A flow sensor is coupled to the flow processor 146 to provide the measured flow rate to the flow processor 146.

In addition to the plasma system 410 using a feedback system, the plasma system 410 operates in a manner similar to the plasma system 350 (Fig. 6B). For example, after changing the gap between the upper electrode 134 and the collet 132, the gap sensor 412 measures the gap. Gap sensor 412 provides the measured amount of gap to gap processor 130. The gap processor 130 determines whether the amount of gap matches a predetermined amount of gap of a state. The predetermined amount of gap in one state is stored in the memory device of the gap control system 362 (Fig. 7). In the memory device, the predetermined amount of gap in one state is coupled to the amount of impedance of the plasma in the plasma chamber 308 in that state. For example, the predetermined gap amount in the state S1 is coupled to the impedance amount Z1, and the predetermined gap amount in the state S0 is coupled to the impedance amount Z2. The plasma impedance in the plasma chamber 308 is one or more of the one or more RF signals provided to the plasma chamber 308, the pressure within the plasma chamber 308, the upper electrode 134 and the chuck within the plasma chamber 308. The gap between 132 and the flow rate of one or more gases flowing into the plasma chamber 308.

The plasma impedance within the plasma chamber 308 is reached for a state to further achieve an etch rate or deposition rate for that state. For example, the predetermined amount of gap in state S0 helps to reach an impedance to further reach a lower etch rate of state S0, and the predetermined amount of gap in state S1 helps to reach an impedance to further reach above the lower etch. The rate of etching of the state S1. For another example, the predetermined amount of gap in state S0 helps to reach an impedance to further reach a higher deposition rate of state S0, and the predetermined amount of gap in state S1 helps to reach an impedance to further reach below this higher The deposition rate of the state S1 of the deposition rate. As another example, the predetermined amount of gap in state S0 helps to achieve an impedance to further reach the deposition rate of state S0, and the predetermined amount of gap in state S1 helps to achieve an impedance to further reach the etch rate of state S1. The deposition rate is the rate at which a material such as a mask, oxide, polymer, etc., is deposited on the workpiece 324, and the etch rate is the rate at which the material on the workpiece 324 is etched away.

The gap amount of state S1 is partially related to one of the parameter signals during state S1, and gap driver GDS1 (Fig. 7) transmits a portion of the parameter signal to operate motor 136; the gap amount of state S0 is the remainder of the parameter signal during state S0 Partially related, the gap driver GDS0 (Fig. 7) transmits the remainder of this parameter signal to operate the motor 136.

After determining that the measured gap amount does not match the predetermined gap amount of a state, the gap processor 130 transmits a feedback signal indicating the same information to the phase delay circuit 138. After a current state such as state S0, state S1, etc., after receiving a signal indicating that the amount of gap measured does not match the predetermined gap amount of the current state, phase delay circuit 138 increases a state immediately following the current state (eg, state) Phase delay of S1, state S0, etc.). The larger phase delay is added to the digital pulsed signal 326 to produce a modified pulsed signal 368 compared to the phase delay of the current state, which has a larger phase delay. For example, phase delay circuit 138 when phase delay circuit 138 has transmitted a portion of the modified pulsed signal 368 of state S1 of a loop to the x MHz RF generator, the y MHz RF generator, and the z MHz RF generator. A signal indicating that the measured gap amount does not match the predetermined gap amount of state S1 is received, so phase delay circuit 138 delays transmitting the remainder of the modified pulsed signal 368 of state S0 of the loop to x MHz RF generation. The action of the y MHz RF generator and the z MHz RF generator. For another example, when the phase delay circuit 138 has sent a portion of the modified pulsed signal 368 of a cyclic state S0 to the x MHz RF generator, the y MHz RF generator, and the z MHz RF generator, the phase delay circuit 138 receives a signal indicating that the measured amount of gap does not match the predetermined amount of gap of state S0, such that phase delay circuit 138 delays transmitting the remainder of the modified pulsed signal 368 of state S1 of the loop to x MHz RF Generator, y MHz RF generator and z MHz RF generator.

On the other hand, after determining that the measured gap amount matches the predetermined gap amount of a state, the gap processor 130 transmits a feedback signal indicating the same information to the phase delay circuit 138. The phase delay circuit 138 transmits a portion of the corrected pulsed signal 368 of the next state to the x MHz RF generator after receiving the signal indicating that the measured amount of gap matches the predetermined amount of gap in the current state during the current state. The y MHz RF generator and the z MHz RF generator do not add any further delay than the phase delay of the current state. For example, phase delay circuit 138 when phase delay circuit 138 has transmitted a portion of the modified pulsed signal 368 of state S1 of a loop to the x MHz RF generator, the y MHz RF generator, and the z MHz RF generator. Receiving a signal indicating that the measured gap amount matches the predetermined gap amount of state S1, so phase delay circuit 138 sends the remainder of the corrected pulsed signal 368 of state S0 of the loop to the x MHz RF generator, y MHz RF generator and z MHz RF generator.

As another example, after the pressure within the volume 382 of the plasma chamber 308 changes, the pressure sensor 416 measures the pressure of one or more gases and/or plasma within the volume 382. Pressure sensor 416 provides the measured amount of voltage to pressure processor 140. The pressure processor 140 determines whether the amount of pressure matches a predetermined amount of pressure in a state. The predetermined amount of pressure in one state is stored in the memory device of pressure control system 364 (Fig. 7). In the memory device, the predetermined amount of pressure in one state is coupled to the amount of impedance of the plasma in the plasma chamber 308. For example, the predetermined pressure amount of the state S1 is connected to the impedance amount Z1, and the predetermined pressure amount of the state S0 is coupled to the impedance amount Z2. The pressure amount of state S1 is related to a portion of one of the parameter signals during state S1, and pressure control PCS1 (Fig. 7) transmits a portion of the parameter signal to operate motor 144; the pressure amount of state S0 and the parameter signal during state S0 The remainder of the correlation is related to the pressure control PCS0 (Fig. 7) transmitting the remainder of this parameter signal to operate the motor 144.

The plasma impedance in the plasma chamber 308 of a state is reached to further reach the etch rate or deposition rate of the state. For example, the predetermined amount of pressure in state S0 helps to reach an impedance to further reach a lower etch rate of state S0, and the predetermined amount of pressure in state S1 helps to reach an impedance to further reach above the lower etch. The rate of etching of the state S1. For another example, the predetermined amount of pressure in state S0 helps to reach an impedance to further reach a higher deposition rate of state S0, and the predetermined amount of pressure in state S1 helps to reach an impedance to further reach below this lower The deposition rate of the state S1 of the deposition rate. As another example, the predetermined amount of pressure in state S0 helps to reach an impedance to further reach the deposition rate of state S0, and the predetermined amount of pressure in state S1 helps to reach an impedance to further reach the etch rate of state S1.

After determining that the measured amount of pressure does not match the predetermined amount of pressure for a state, the pressure processor 140 sends a feedback signal indicating the same information to the phase delay circuit 138. After receiving the signal indicating that the amount of pressure does not match the predetermined amount of gap in the current state during the current state, the phase delay circuit 138 increases the phase delay of the portion of the pulsed digital signal 326 of the next state to generate a A modified pulsed signal 368 for the x MHz RF generator, the y MHz RF generator, and the z MHz RF generator. On the other hand, after determining that the measured amount of pressure matches a predetermined amount of pressure in a state, the pressure processor 140 transmits a feedback signal indicating the same information to the phase delay circuit 138. The phase delay circuit 138 sends a portion of the pulsed digital signal 326 of the next state to the x MHz RF generator, y, after receiving the signal indicating that the measured amount of pressure matches the predetermined amount of gap in the current state during the current state. The MHz RF generator and the z MHz RF generator do not add any delay to the pulsed digital signal 326.

Still further, for example, after varying the flow rate within the casing surrounding the valve member 148, the flow sensor 414 measures the flow rate of one or more process gases flowing from the gas source GS to the plasma chamber 308. Flow sensor 414 provides the measured flow rate amount to flow processor 146. Flow processor 146 determines if the flow rate amount matches a predetermined flow rate amount for a state. The predetermined flow rate amount for a state is stored in the memory device of flow control system 366 (Fig. 7). In the memory device, the predetermined flow rate amount in one state is coupled to the impedance of the plasma in the plasma chamber 308. For example, the predetermined flow rate amount of the state S1 is coupled to the impedance amount Z1, and the predetermined flow rate amount of the state S0 is coupled to the impedance amount Z2. The flow rate of state S1 is related to a portion of one of the parameter signals during state S1, and flow driver FDS1 (Fig. 7) transmits a portion of the parameter signal to operate motor 150; the flow rate of state S0 is during the state S0 The remainder of the parameter signal is correlated, and the flow driver FDS0 (Fig. 7) transmits the remainder of the parameter signal to operate the motor 150.

The plasma impedance in the plasma chamber 308 of a state is reached to further reach the etch rate or deposition rate of the state. For example, the predetermined flow rate amount of state S0 helps to reach an impedance to further reach a lower etch rate of state S0, and the predetermined flow rate amount of state S1 helps to reach an impedance to further reach higher than the ratio. The etching rate of the state S1 of low etching rate. For another example, the predetermined flow rate of state S0 helps to reach an impedance to further reach a higher deposition rate of state S0, and the predetermined flow rate of state S1 helps to reach an impedance to further reach below The deposition rate of the state S1 of a higher deposition rate. For another example, the predetermined flow rate of state S0 helps to reach an impedance to further reach the deposition rate of state S0 while the predetermined flow rate of state S1 contributes to an impedance to further reach the etch rate of state S1. .

After determining that the measured flow rate amount does not match the predetermined flow rate amount of a state, the flow processor 146 sends a feedback signal indicating the same signal to the phase delay circuit 138. After receiving the signal indicating that the flow rate amount does not match the predetermined flow rate amount of the current state during the current state, the phase delay circuit 138 determines to increase a phase delay to a portion of the pulsed digital signal 326 of the next state. A modified pulsed signal 368 to be sent to the x MHz RF generator, the y MHz RF generator, and the z MHz RF generator is generated. On the other hand, after determining that the measured flow rate amount matches the predetermined flow rate amount of a state, the flow processor 146 sends a feedback signal indicating the same signal to the phase delay circuit 138. After receiving the signal indicating that the measured flow rate amount matches the predetermined flow rate amount of the current state during the current state, the phase delay circuit 138 transmits a portion of the next state pulsed digital signal 326 to the x MHz RF generator. The y MHz RF generator and the z MHz RF generator are added without any delay to the pulsed digital signal 326.

In various embodiments, the feedback signals generated by the gap processor 130, the WAP processor 140, and the flow processor 146 are generated in response to the digitally pulsed signal 326 and the modified pulsation generated by the x MHz RF generator. Signal 368.

In various embodiments, phase delay circuit 138 adds a phase delay to digital pulsed signal 326 that is determined to compensate for the response time of the gap control mechanical component, the response time of the pressure control mechanical component, and flow control. The slowest response time of the mechanical component's response time. For example, the phase delay added by phase delay circuit 138 matches or exceeds the longest response time in the response time of the gap control mechanical component, the pressure control mechanical component, and the flow control mechanical component. For another example, a signal indicating that the gap measured by the gap sensor 412 does not match a predetermined amount of gap, and the pressure measured by the pressure sensor 416 does not match the predetermined amount of pressure of a state. After the flow rate measured by the flow sensor 414 does not match the signal of the predetermined flow rate of a state, the phase delay circuit 138 determines the time required to achieve a predetermined amount of gap in a state, to achieve a The time required for the predetermined amount of pressure of the state and the maximum amount of time required to achieve the predetermined flow rate amount for a state. The phase delay circuit 138 accesses from the memory device of the phase delay circuit 138 the time required to achieve a predetermined amount of gap in a state, the time required to achieve a predetermined amount of pressure in a state, and the state used to achieve a state. The time required to reserve the flow rate amount. After determining that the time required to achieve the predetermined flow rate amount for a state is the longest time, the phase delay circuit 138 delays the remainder of the pulsed digital signal 326 by the amount of the predetermined flow rate required to achieve the state. time. Similarly, after determining that the time required to achieve the predetermined amount of pressure for a state is the longest time, phase delay circuit 138 delays the remainder of pulsed digital signal 326 by the predetermined amount of pressure required to achieve the state. time. Moreover, similarly, after determining that the time required to achieve the predetermined amount of gap for a state is the longest time, the phase delay circuit 138 delays the remaining portion of the pulsated digital signal 326 by the predetermined amount of gap to achieve the state. The time required.

In various embodiments, phase delay circuit 138 includes a processor.

It should be noted that in some embodiments, the response time of a mechanical component such as a gap control mechanical component, or a pressure control mechanical component, or a flow control mechanical component, includes a response time of one of the mechanical components and a remainder of the mechanical component The sum of one or more response times corresponding to one or more. For example, in a group of two mechanical components (such as two gap control mechanical components, or two pressure control mechanical components, or two flow control mechanical components, etc.), the response time of the two mechanical components is the two mechanical components The sum of the response time of the first one and the response time of the second of the two mechanical components.

In various embodiments, the response time of the mechanical component (including the gap control mechanical component, the pressure control mechanical component, and the flow control mechanical component) is one of one or more of the first one of the mechanical component and the remainder of the mechanical component or The longest response time among multiple response times. For example, in a group of two mechanical components (such as two gap control mechanical components, or two pressure control mechanical components, or two flow control mechanical components, etc.), the response time of the two mechanical components is the two mechanical components The response time of the first one is the longest response time of the response time of the second of the two mechanical components.

In some embodiments, phase delay circuit 138 is implemented within host system 312 (FIG. 6B).

In various embodiments in which the three states are used, the gap control system 362 includes three gap drivers instead of two gap drivers, i.e., each of the states S2, S3, and S4 has a gap driver. Again, in such embodiments, the WAP control system 364 includes three pressure controllers instead of two pressure controllers, i.e., each of the states S2, S3, and S4 has a pressure controller. Again, in such embodiments, flow control system 366 includes three flow drivers instead of two flow drivers, i.e., each state of states S2, S3, and S4 has a flow driver. During state S2, gap processor 130 sends a signal to the gap driver for state S2 to control motor 136 to further control the position of upper electrode 134. Also, during state S3, gap processor 130 sends a signal to the gap driver for state S3 to control motor 136 to further control the position of upper electrode 134. During state S4, gap processor 130 sends a signal to the gap driver for state S4 to control motor 136 to further control the position of upper electrode 134. During state S2, WAP processor 140 sends a signal to the pressure controller for state S2 to control motor 144 to further control the vertical position of limit ring 142. Also, during state S3, WAP processor 140 sends a signal to the pressure controller for state S3 to control motor 144 to further control the vertical position of limit ring 142. During state S4, WAP processor 140 sends a signal to the pressure controller for state S4 to control motor 144 to further control the vertical position of limit ring 142. Similarly, during state S2, flow processor 146 sends a signal to the flow driver for state S2 to control motor 150 to further control the opening and closing of valve member 148. Again, during state S3, flow processor 146 sends a signal to the flow driver for state S3 to control motor 150 to further control the opening and closing of valve member 148. During state S4, flow processor 146 sends a signal to the flow driver for state S4 to control motor 150 to further control the opening and closing of valve member 148.

It should be noted that in some embodiments, instead of controlling the vertical up and down position of the restraint ring 142, the motor is controlled by the WAP controller and the WAP processor 140 to control the opening and closing of the limit ring. Opening and closing are used to control the pressure within the plasma chamber 308.

In some embodiments, different phase delays are applied to different RF generators. For example, a first phase delay is applied to the x MHz RF generator and a second phase delay is applied to the MHz RF generator. A first phase delay circuit for applying a first phase delay is coupled between the host system 312 and the x MHz RF generator, and a second phase delay circuit for applying a second phase delay is coupled to the host system 312 and y Between MHz RF generators. The first phase delay circuit receives the digital pulsed signal 326 from the host system 312 and delays the phase of the digital pulsed signal 326 by the first phase delay to produce a modified version to be provided to the x MHz RF generator. Pulse signal 368. The x MHz RF generator receives the modified pulsed signal 368 and produces an RF signal synchronized with the modified pulsed signal 368. Moreover, the second phase delay circuit receives the digital pulsed signal 326 from the host system 312 and delays the phase of the digital pulsed signal 326 by the second phase delay to produce another corrected to be provided to the y MHz RF generator. The pulse of the pulse. The y MHz RF generator receives the another modified pulsed signal and generates an RF signal synchronized with the other modified pulsed signal.

Figure 9 shows an embodiment of a pulsating signal for generating three states of three states S2, S3 and S4. The three states S2, S3 and S4 repeat each clock cycle. Each of S2, S3, and S4 is shown to occupy a 33% duty cycle. In some embodiments, each of states S2, S3, and S4 occupies a duty cycle that is different from 33%. For example, state S2 occupies a 20% duty cycle, state S3 occupies a 50% duty cycle, and state S4 occupies a 30% duty cycle. As another example, state S2 occupies a 40% duty cycle, state S3 occupies a 10% duty cycle, and state S4 occupies a 50% duty cycle.

Rather than providing a two-state pulsed signal 326 (FIGS. 6A, 6B, 7 and 8) to an x MHz RF generator, a y MHz RF generator, a z MHz RF generator, a gap control system 362, a pressure control system 364, and/or The flow control system 366, but generates a three-state pulsed signal from a clock source (such as a quartz oscillator, etc.) or from a computer, and then supplies it to one or more of the x, y, and z MHz RF generators. . After receiving the three-state pulsed signal, any of the x MHz RF generator, the y MHz RF generator, and the z MHz RF generator are generated in Figure a8 (Figure 1C-2), or in Figure a9 ( An RF signal of the statistical measurements shown in Figure 1C-2), or in Figure a12 (Figure 1D-2), or in Figure a13 (Figure 1D-2). Similarly, after receiving the three-state pulsed signal, any of the x MHz RF generator, the y MHz RF generator, and the z MHz RF generator are generated in Figure b8 (Figure 2C-2), or in An RF signal of the statistical measurements shown in Figure b9 (Figure 2C-2), or in Figure b12 (Figure 2D-2), or in Figure b13 (Figure 2D-2). Moreover, after receiving the three-state pulsation signal, any one of the gap control system 362, the pressure control system 364, and the flow control system 366 is generated as shown in FIG. a8 (FIG. 1C-2), as shown in FIG. -2) Medium, or one of the signals shown in Figure a12 (Figure 1D-2) or as shown in Figure a13 (Figure 1D-2). Similarly, after receiving the three-state pulsation signal, either of the gap control system 362, the pressure control system 364, and the flow control system 366 is generated as shown in Figure b8 (Fig. 2C-2), or as shown in Figure b9 (Fig. In 2C-2), or as shown in Figure b12 (Figure 2D-2), or as shown in Figure b13 (Figure 2D-2).

In various embodiments, after receiving the three-state pulsated signal, the combination of the x, y, and z MHz RF generators is generated as shown in FIG. a8 (FIG. 1C-2), FIG. a9 (FIG. 1C-2), and FIG. (Fig. 1D-2), Fig. a13 (Fig. 1D-2), Fig. b8 (Fig. 2C-2), Fig. b9 (Fig. 2C-2), Fig. b12 (Fig. 2D-2) and Fig. b13 (Fig. 2D-2) The complex RF signal of the complex statistical measurements shown in the combination. Similarly, in some embodiments, after receiving the three-state pulsation signal, the combination of gap control system 362, pressure control system 364, and flow control system 366 produces a Figure 8 (Fig. 1C-2), Figure a9 (Fig. 1C-2), a12 (Fig. 1D-2), Fig. a13 (Fig. 1D-2), Fig. b8 (Fig. 2C-2), Fig. b9 (Fig. 2C-2), Fig. b12 (Fig. 2D-2) The complex signal shown in the combination with Figure b13 (Figure 2D-2).

In several embodiments, the three-state pulsated signal is generated by a clock source or by a computer and then supplied to phase delay circuit 138 (Figs. 6B, 7, 8) to produce a delayed three-state pulsation. Signal. The delayed three-state pulsation signal is provided to an x MHz RF generator, a y MHz RF generator, and a z MHz RF generator. After receiving the delayed three-state pulsation signal, the x MHz RF generator, the y MHz RF generator, and the z MHz RF generator generate a complex RF signal that is synchronized with the three-state pulsed signal.

In various embodiments, the three-state pulsed signal is generated by a clock source or a computer and then provided to gap processor 130 (FIGS. 6B, 7, 8) and WAP processor 140 (FIGS. 6B, 7, 8) and flow processor 146 (Figs. 6B, 7, 8). After receiving the three-state pulsation signal, gap processor 130 and flow processor 146 control its respective motors 136 and 150 for each state S2, S3, and S4 by a corresponding driver. Again, after receiving the three-state pulsation signal, the WAP processor 140 controls the motor 144 for each state S2, S3, and S4 by a corresponding controller.

In some embodiments, a three-state pulse source (such as a processor, a computer, a quartz oscillator, and an analog-to-digital converter) is used to generate a three-state pulsed signal. The first clock signal of the first of the plurality of bit clock sources has a state of 1 and 0, and the second clock signal of the second of the plurality of clock sources has a state of 1 and 0. An adder (such as an adder circuit, etc.) is coupled to the two-digit clock source to generate a three-state pulsed signal by summing the first and second digital signals. The adder is coupled to an x MHz RF generator and/or y MHz RF generator and/or z MHz RF generator and/or phase delay circuit 138 and/or gap control system 362 and/or pressure control system 364 and/or Or flow control system 366 to provide a three-state pulsed signal to an x MHz RF generator and/or a y MHz RF generator and/or a z MHz RF generator and/or phase delay circuit 138 and/or a gap control system 362 and/or pressure control system 364 and/or flow control system 366.

380 of FIG. 10 is used to illustrate the group phase delay of the first and second variables compared to the phase of the pulsed signal 326. Figure 380 plots the amplitude of a signal on the y-axis and the time t on the x-axis. Graph 380 plots the first variable versus time on the y-axis. The first variable is shown as signal 384. Again, graph 380 plots the second variable on the y-axis versus time. The second variable is shown as signal 386.

It should be noted that diagram 380 is not to scale. For example, although at a certain time, signals 326, 368, 384, and 386 are shown to have approximately the same amplitude, the amplitude of any of signals 326, 368, 384, and 386 is different from signals 326, 368, 384. The amplitude of one or more of the remaining ones in 386.

After the phase delay circuit 138 (Figs. 6B, 7 and 8) applies a group phase delay (e.g., phase delay φd, etc.) to produce a modified pulsated signal 368, the modified pulsating signal 368 is applied to x MHz. RF generator, y MHz RF generator and z MHz RF generator. Either of the x, y, and z MHz RF generators produces two RF signals having signals 384 and 386 as statistical measurements of the RF signal. The two RF signals provided by both the x MHz RF generator, the y MHz RF generator, and the z MHz RF generator are generated after or simultaneously with the group phase delay.

Although FIG. 380 shows signals 384 and 386 for either the x MHz RF generator, the y MHz RF generator, and the z MHz RF generator, in some embodiments, FIG. 380 includes an x MHz RF generator, y A statistical measure of the complex RF signal generated by one or more of the MHz RF generator and the z MHz RF generator.

In some embodiments, signal 384 represents a first parameter rather than a first variable, and signal 386 represents a second parameter rather than a second variable.

Although the above embodiments are illustrated with x, y, and z MHz RF generators, in some embodiments any number of RF generators can be used, such as two RF generators, one RF generator, four RF generations. And so on.

It should be noted that while the above embodiments are described with reference to parallel plate plasma chamber 308, in one embodiment, the above embodiments are applied to other types of plasma chambers, such as those containing inductively coupled plasma (ICP) reactors. A slurry chamber, a plasma chamber containing an electron cyclotron resonance (ECR) reactor, and the like. For example, x, y, and z MHz RF generators are coupled to inductors within the ICP plasma chamber.

It should be noted that while the above embodiments are directed to providing an RF signal to the lower electrode of the collet 132 and the grounded upper electrode 134, in several embodiments, the RF signal is provided to the upper electrode 134 but the lower electrode of the collet 132 Ground.

The embodiments described herein can be implemented using a variety of computer system configurations, including hand-held hardware units, microprocessor systems, microprocessor-based or programmable consumer electronics, mini-computers, host computers, and the like. Such embodiments can also be implemented in a decentralized computing environment where tasks are performed by remote processing hardware units connected via a network.

In view of the above-described embodiments, it should be appreciated that the embodiments can perform various computer implementation steps involving data stored in a computer system. These steps require substantial manipulation of the physical quantity. Any of the steps described to form part of an embodiment are useful mechanical steps. Embodiments are also directed to hardware units or devices that perform such steps. Equipment can be built specifically for specialized computers. When a computer is defined as a dedicated computer, the computer can be used for other purposes, other processing, program execution or other non-special purpose subprograms. In some embodiments, the steps may be performed by a selectively activated general purpose computer or by one or more computer programs stored in computer memory, cache memory, or from a network. When data is obtained from the network, the data can be processed by other computers on the network, such as computing resources.

One or more embodiments can be fabricated as a computer readable code on a non-transitory computer readable medium such as a storage device. A non-transitory computer readable medium is any storage device that can store data and subsequently be readable by a computer system. Examples of non-transitory computer readable media include hard disk, network attached storage (NAS), ROM, RAM, compact disk-ROM (CD-ROM), recordable CD (CD-R), re-writable CD (CD-RW), magnetic tape and other optical and non-optical data storage hardware units. The non-transitory computer readable medium can comprise a computer readable physical medium distributed over a network coupled computer system such that the computer readable code is stored and executed in a distributed fashion.

Although the foregoing steps are described in a specific order, as long as the overall processing of the delay steps can be performed in a desired manner, other idle steps or adjustable steps may be performed between the steps to make them occur slightly differently, or the steps may be assigned To systems that allow processing steps to occur at different intervals associated with processing.

One or more features from any embodiment can be combined with one or more features of any other embodiments without departing from the scope of the various embodiments described herein.

Although the foregoing embodiments have been described in detail for the purpose of the invention, the invention Therefore, the present embodiments are to be considered as illustrative and not restrictive

A1-A36‧‧‧Amplitude
AFTS0x‧‧‧frequency automatic modulator
AFTS0y‧‧‧frequency automatic modulator
AFTS0z‧‧‧frequency automatic modulator
AFTS1x‧‧‧frequency automatic modulator
AFTS1y‧‧‧frequency automatic modulator
AFTS1z‧‧‧frequency automatic modulator
B1-B36‧‧‧ amplitude
DSPx‧‧‧ digital signal processor
DSPy‧‧‧Digital Signal Processor
DSPz‧‧‧Digital Signal Processor
FDS0‧‧‧Mobile Drive
FDS1‧‧‧Mobile Drive
GDS0‧‧‧ gap driver
GDS1‧‧‧clear drive
GS1‧‧‧ gas source
PCS0‧‧‧ Pressure Controller
PCS1‧‧‧ Pressure Controller
PCS0x‧‧‧ power controller
PCS0y‧‧‧Power Controller
PCS0z‧‧‧ power controller
PCS1x‧‧‧ power controller
PCS1y‧‧‧ power controller
PCS1z‧‧‧ power controller
PSx‧‧‧RF Power Supply
PSy‧‧‧RF Power Supply
PSz‧‧‧RF Power Supply
S0-S4‧‧‧ Status
Z1‧‧‧ Impedance
Z2‧‧‧ Impedance
101‧‧‧Part 1
102‧‧‧Sinusoidal RF signal
103‧‧‧Part II
108‧‧‧Sinusoidal RF signal
110‧‧‧statistics
130‧‧‧ gap processor
132‧‧‧ chuck
134‧‧‧Upper electrode
136‧‧ ‧ motor
138‧‧‧ phase delay circuit
140‧‧‧pressure processor
142‧‧‧Restricted ring
142A‧‧‧Restricted ring
142B‧‧‧Restricted ring
144‧‧‧Motor
146‧‧‧Mobile Processor
148‧‧‧ valve parts
150‧‧‧Motor
300‧‧‧ Plasma System
302‧‧‧ impedance matching circuit
304‧‧‧RF cable
306‧‧‧RF signal
308‧‧‧Plastic chamber
310‧‧‧RF transmission line
312‧‧‧Host system
320‧‧‧RF cable
322‧‧‧RF cable
324‧‧‧Workpieces
326‧‧‧ digital pulsating signals
327‧‧‧ upper surface
350‧‧‧ Plasma System
361‧‧‧Gap control system
362‧‧‧Gap control system
364‧‧‧ Pressure Control System
366‧‧‧Flow Control System
368‧‧‧Corrected pulse signal
382‧‧‧ volume
384‧‧‧ signal
386‧‧‧ signal
400‧‧‧Micro plasma system
410‧‧‧ Plasma System
412‧‧‧Gap Sensor
414‧‧‧ Flow Sensor
416‧‧‧ Pressure Sensor

The various embodiments of the present invention are best understood by reference to the description

1A shows an illustration of soft pulsations to illustrate a first variation in accordance with various embodiments of the present invention.

Figure 1B shows an additional illustration to illustrate soft pulsations in accordance with a first variation of several embodiments of the present invention.

Figure 1C-1 shows an illustration of soft pulsation to illustrate a first variation of several embodiments in accordance with the present invention.

1C-2 shows an illustration of soft pulsations for illustrating a first variable synchronized with three states of a pulsating signal in accordance with several embodiments of the present invention.

1D-1 shows more illustration of soft pulsations to illustrate a first variation in accordance with some embodiments of the present invention.

1D-2 shows more illustration of soft pulsations to illustrate a first variable synchronized with three states of a pulsating signal, in accordance with some embodiments of the present invention.

Figure 1E shows an additional illustration to illustrate soft pulsation of a first variation in accordance with some embodiments of the present invention.

Figure 1F shows an illustration of soft pulsations to illustrate a first variation in accordance with various embodiments of the present invention.

2A shows an illustration of soft pulsations to illustrate a second variation in accordance with various embodiments of the present invention.

Figure 2B shows an additional illustration of soft pulsations to illustrate a second variation of several embodiments in accordance with the present invention.

2C-1 shows an illustration of soft pulsations to illustrate a second variation of several embodiments in accordance with the present invention.

2C-2 shows an illustration of soft pulsations for illustrating a second variable synchronized with three states of a pulsating signal in accordance with several embodiments of the present invention.

2D-1 shows an illustration of soft pulsations to illustrate a second variation in accordance with some embodiments of the present invention.

2D-2 shows an illustration of soft pulsations to illustrate a second variable synchronized with three states of a pulsated signal, in accordance with some embodiments of the present invention.

2E shows an additional illustration of soft pulsations to illustrate a second variation in accordance with some embodiments of the present invention.

2F shows an illustration of soft pulsations to illustrate a second variation in accordance with various embodiments of the present invention.

3 is a diagram for illustrating each of FIGS. 1A through 1F and FIGS. 2A through 2F depicting statistical measurements of sinusoidal signals generated by a radio frequency (RF) generator in accordance with various embodiments of the present invention.

4 is a diagram showing the first variable as shown in any of FIGS. 1A to 1F generated by an RF generator in accordance with several embodiments of the present invention and simultaneously achieved as shown in any of FIGS. 2A to 2F. The second variable of the RF signal.

Figure 5 shows an illustration for illustrating similarities between complex icons in accordance with several embodiments of the present invention.

6A is a plasma system for soft pulsing using digital pulsating signals from a host system in accordance with some embodiments of the present invention.

6B is a plasma system for illustrating soft pulsation applied to a complex variable by using a phase delay circuit and receiving a digital pulsated signal from a host system, in accordance with some embodiments of the present invention.

7 is a plasma system for illustrating the use of a primary RF generator to generate a digital pulsation signal and to illustrate soft pulsation using a phase delay circuit, in accordance with various embodiments of the present invention.

Figure 8 is a plasma system for illustrating the timing of providing a state under a digitally pulsed signal using a feedback system in accordance with various embodiments of the present invention.

Figure 9 shows a pulsating signal for generating a three state of three states in accordance with various embodiments of the present invention.

Figure 10 illustrates first and second variables synchronized with a pulsed signal in accordance with various embodiments of the present invention.

AFT‧‧‧Automatic frequency modulator

DSP‧‧‧Digital Signal Processor

PC‧‧‧ power controller

PS‧‧‧RF power supplier

S0‧‧‧ Status

S1‧‧‧ Status

132‧‧‧ chuck

134‧‧‧Upper electrode

300‧‧‧ Plasma System

302‧‧‧ impedance matching circuit

304‧‧‧RF cable

306‧‧‧RF signal

308‧‧‧Plastic chamber

310‧‧‧RF transmission line

312‧‧‧Host system

320‧‧‧RF cable

324‧‧‧Workpieces

326‧‧‧ digital pulsating signals

327‧‧‧ upper surface

Claims (23)

A plasma system comprising: a primary radio frequency (RF) generator for generating a first portion of a primary RF signal during a first state and generating a second one of the primary RF signals during a second state a portion, wherein the primary RF signal is a sinusoidal signal; an impedance matching circuit coupled to the primary RF generator by an RF cable to modify the primary RF signal to generate a modified RF signal; and a plasma chamber And coupled to the impedance matching circuit by an RF transmission line, the plasma chamber is configured to generate a plasma based on the modified RF signal, wherein the first portion of the statistical measurement has a positive slope or a negative slope. The plasma system of claim 1, further comprising: a slave RF generator for receiving a first portion of a digitally pulsed signal from the primary RF generator during the first state, and Receiving, from the primary RF generator, a second portion of the digitally pulsed signal during the second state, the slave RF generator configured to generate a first portion of a dependent RF signal during the first state and at the A second portion of the slave RF signal is generated during the second state, wherein the slave signal is a sinusoidal signal, wherein the statistical value of the first portion of the slave RF signal has a positive slope or a negative slope. The plasma system of claim 2, wherein the statistical value of the first portion of the slave RF signal is at least the period during which the statistical value of the first portion of the primary RF signal has the positive slope This positive slope is present during a portion of the period. The plasma system of claim 2, wherein the statistical value of the first portion of the slave RF signal is at least during a period in which the statistical value of the first portion of the primary RF signal has the negative slope This negative slope is present during a portion of the period. A plasma system as claimed in claim 1, wherein the primary RF signal has frequency and power. The plasma system of claim 1, further comprising: a gap control system coupled to the primary RF generator to generate a first portion of a gap signal during the first state and during the second state Generating a second portion of the gap signal, wherein the plasma chamber includes a collet and an upper electrode facing the collet, and the gap control system is further coupled to the upper electrode of the plasma chamber by a motor to change a gap between the upper electrode and the chuck, wherein the gap signal has a positive slope or a negative slope. The plasma system of claim 6, wherein the gap control system comprises a gap sensor for determining the amount of the gap between the upper electrode and the chuck. The plasma system of claim 7, further comprising: a main controller for generating a pulsation signal; and a phase delay circuit coupled to the main controller to delay the passage based on the amount of the gap A phase of the pulsating signal, the primary controller being coupled to the primary RF generator by the phase delay circuit. The plasma system of claim 1, further comprising: a pressure control system coupled to the primary RF generator to generate a first portion of a pressure signal during the first state and during the second state Generating a second portion of the pressure signal, wherein the plasma chamber includes a plurality of confinement rings, the pressure control system being coupled to the plurality of confinement rings by a motor to change a pressure within the plasma chamber, wherein the pressure signal The first portion has a positive slope or a negative slope. The plasma system of claim 9, wherein the pressure control system comprises a pressure sensor for determining the amount of the pressure in the plasma chamber. The plasma system of claim 10, further comprising: a main controller for generating a pulsation signal; and a phase delay circuit coupled to the main controller to delay the passage based on the amount of the pressure A phase of the pulsating signal, the primary controller being coupled to the primary RF generator by the phase delay circuit. The plasma system of claim 1, further comprising: a flow control system coupled to the primary RF generator to generate a first portion of a flow signal during the first state and during the second state Generating a second portion of the flow signal, the flow control system being coupled to a valve member by a motor to control a rate of gas flowing into a plasma chamber, the first portion of the flow signal having a positive Slope or a negative slope. A plasma system according to claim 12, wherein the flow control system comprises a flow sensor for determining the amount of one or more gas streams in the plasma chamber. The plasma system of claim 13 further comprising: a main controller for generating a pulsating signal; and a phase delay circuit coupled to the main controller to delay the amount based on the amount of the gas flow A phase of the pulsed signal is coupled to the primary RF generator by the phase delay circuit. The plasma system of claim 1, wherein the first state is a high state and the second state is a low state. The plasma system of claim 1, wherein the first state is opposite to the second state. A plasma system as claimed in claim 1 wherein the impedance matching circuit modifies the primary RF by matching an impedance coupled to one of the load of the impedance matching circuit and an impedance coupled to a source of the impedance matching circuit Signal. A plasma system according to claim 1, wherein the statistical measurement comprises a root mean square value, or an average value, or a median value, or a peak to peak amplitude, or a zero to peak amplitude, or a combination thereof. The plasma system of claim 1, wherein the positive slope and the negative slope are each a non-zero finite slope. A method comprising: generating a first portion of a primary radio frequency (RF) signal during a first state and generating a second portion of the primary RF signal during a second state; matching a load based on the primary RF signal Impedance and a source to generate a modified RF signal, the source comprising an RF generator and an RF cable, the load comprising an RF transmission line and a plasma chamber; and receiving the modified RF signal for A plasma is generated in the plasma chamber, wherein a statistical measure of the first portion has a positive slope or a negative slope. The method of claim 20, wherein the statistical measurement comprises a root mean square value, or an average, or a median, or a peak to peak amplitude, or a zero to peak amplitude, or a combination thereof. A plasma system comprising: a first radio frequency (RF) generator for generating a first portion of a first RF signal during a first state and generating the first RF signal during a second state a second part, wherein the first RF signal is a sinusoidal signal, wherein the first RF generator is coupled to an impedance matching circuit, the impedance matching circuit is coupled to a plasma chamber, wherein the first RF signal is The statistical value of the first portion has a positive slope or a negative slope. The plasma system of claim 22, further comprising: a second RF generator for generating a first portion of a second RF signal during the first state and generating the second state during the second state a second portion of the second RF signal, wherein the second RF signal is a sinusoidal signal, wherein the second RF generator is coupled to the impedance matching circuit by an RF cable, wherein the second RF signal is The first part of the statistical measurement has a positive slope or a negative slope.