TW201602387A - MOCVD semiconductor processing device and its manufacturing method - Google Patents

Abstract

The embodiment of the present invention provides a MOCVD semiconductor processing device and its manufacturing method. The semiconductor processing apparatus includes a processing chamber that is used to infuse the source gases for the necessary treatment for the substrate placed in the processing chamber. The processing chamber that contains a plurality of processing parts is also used for receiving plasma. The semiconductor processing apparatus also comprises: an etch-resistant layer that covers the surface exposed to the plasma in the processing chamber and/or the processing parts. The etch-resistant layer is used to resist the etching by the plasma and to protect the processing chamber and/or processing parts. By using the etch-resistant layer to protect the processing chamber and processing parts, the present invention can avoid any damages caused by the plasma in the processing chamber and processing parts, and enhance the service life of the processing chamber and processing parts.

Description

MOCVD semiconductor processing device and manufacturing method

The present invention relates to the field of semiconductor technology, and in particular, to an anti-etching layer, a semiconductor processing apparatus, and a method of fabricating the same.

MOCVD is an abbreviation for Metal-organic Chemical Vapor Deposition. MOCVD is a new type of vapor phase epitaxy technology developed on the basis of vapor phase epitaxy (VPE). It uses organic compounds of group III and II elements and hydrides of group V and VI as crystal growth source materials, and performs vapor phase epitaxy on the substrate by thermal decomposition reaction to grow various III-V groups and II- A thin layer single crystal material of a Group VI compound semiconductor and their multiple solid solution. Generally, the crystal growth in the MOCVD system is carried out in a cold-wall quartz (stainless steel) reaction chamber at normal pressure or low pressure (10-100 Torr), and H _{2 is} used as a carrier gas (Carrier Gas), and the substrate temperature is 500-1200. °C, the graphite base is heated by RF induction (the substrate is above the graphite base), and H ₂ carries the metal organic matter to the growth zone by means of a temperature controlled liquid source bubbling.

For details, please refer to the existing MOCVD internal structure diagram shown in FIG. The processing chamber 40 has a heated graphite base 20 on which a plurality of substrates 30 to be processed, a shower head (SH) 10 and the heated graphite base 20 and a substrate to be treated are placed. The shower head 10 is made of a material such as stainless steel, and the shower head 10 has a plurality of holes therein, and the shower head 10 sprays a gaseous substance on the substrate 30 to be processed through the cavity. A chemical reaction occurs above the substrate 30 to be processed, and a formed reaction substance is deposited on the substrate 30 to be processed to form an epitaxial layer.

Further information on existing MOCVD equipment can be found in U.S. Patent Application Serial No. US20050136188.

In practice, it has been found that during the process of the MOCVD apparatus, the processing components in the chamber of the MOCVD apparatus and in the MOCVD apparatus are caused by the source materials due to accumulation of source materials, accumulation of reaction substances generated by chemical reactions between the source materials, and the like. Or the reaction material is contaminated. The prior art uses an in-situ chemical cleaning method to periodically clean the processing chamber of the MOCVD equipment. Wherein the in-situ chemical cleaning method is to form a plasma containing acidic ions or alkaline ions in a processing chamber of an MOCVD apparatus, using the plasma to treat a processing chamber of the MOCVD apparatus and a surface of a processing component that may be contaminated Cleaning is performed, and the source material or the reaction material is removed by the plasma reacting with the source material or the reaction material.

It has been found in practice that the plasma used in the above-described in-situ chemical cleaning method may damage the inside of the MOCVD device chamber and the surface of the processing member exposed to the plasma while removing the source material or the reaction material, thereby reducing The service life of the MOCVD equipment chamber and processing components increases the user's cost of use.

The problem to be solved by the present invention is to provide an anti-etching layer, a semiconductor processing apparatus and a manufacturing method thereof, which form an anti-etching layer on the surface of the reaction chamber of the MOCVD apparatus and the surface of the processing component exposed to the plasma, eliminating or reducing the existing The reaction chamber and processing components of the MOCVD equipment are affected by plasma damage, which increases the service life of the MOCVD equipment chamber and the processing components, thereby reducing the user's cost of use.

In order to solve the above problems, an embodiment of the present invention provides a semiconductor processing apparatus including a processing chamber for introducing a source gas, performing corresponding processing on a substrate placed in a processing chamber, and the processing chamber The chamber is also for containing a plasma, the processing chamber having a plurality of processing components, and further comprising: an anti-etching layer covering the plasma-exposed surface of the processing chamber and/or the processing component, the anti-etching The etch layer is used to resist etching of the plasma and to protect the processing chamber and/or the processing component, the material of the etch resistant layer being ceramic.

Optionally, the ceramic material is Y ₂ O ₃ , Al ₂ O ₃ , YAG, YF ₃ , Er ₂ O ₃ , Gd ₂ O ₃ , RhO ₂ , Ir ₂ O ₃ , ZrO ₂ , AlN, SiC, Si _{One of 3} N ₄ or a combination thereof.

Optionally, the material of the processing chamber and/or the processing component is the same as or different from the material of the anti-etching layer.

Optionally, the semiconductor processing device is an MOCVD device, a plasma etching device, or a plasma enhanced chemical vapor deposition device.

A method of fabricating a semiconductor processing apparatus, comprising: providing a processing chamber or a processing component, wherein the processing chamber is configured to pass a source gas, and correspondingly process a substrate placed in the processing chamber, wherein the processing chamber is further used Accommodating a plasma and the processing component; forming an anti-etching layer on the plasma-exposed surface of the processing chamber and/or the processing component, the anti-etching layer being used to resist plasma etching and The processing chamber and/or the processing component are protected, and the material of the anti-etching layer is made of ceramic material.

Optionally, the material of the processing chamber and/or the processing component is the same as or different from the material of the anti-etching layer.

Optionally, the semiconductor processing device is an MOCVD device, a plasma etching device, or a plasma enhanced chemical vapor deposition device.

Optionally, the anti-etching layer is fabricated by a plasma spraying process, a chemical vapor deposition process, a plasma enhanced chemical vapor deposition process, a physical vapor deposition process, a chemical sol gel process, and a chemical wet coating process. Layer process or a combination thereof.

Correspondingly, the present invention also provides an anti-etching layer for resisting plasma etching. The anti-etching layer is made of ceramic material, and the ceramic material is Y ₂ O ₃ , Al ₂ O ₃ , YAG, One or a combination of YF ₃ , Er ₂ O ₃ , Gd ₂ O ₃ , RuO ₂ , Ir ₂ O ₃ , ZrO ₂ , AlN, SiC, Si ₃ N ₄ .

Optionally, the anti-etching layer is formed by a plasma spraying process, a chemical vapor deposition process, a plasma enhanced chemical vapor deposition process, a physical vapor deposition process, a chemical sol gel process, a chemical wet coating process. Process or a combination thereof.

Compared with the prior art, the embodiments of the present invention have the following advantages: the embodiment of the present invention forms an anti-etching layer on the plasma-exposed surface of the processing chamber of the semiconductor processing device and/or the processing component, thereby performing in-situ chemistry The cleaning resist layer is resistant to plasma etching during cleaning and is capable of protecting the processing chamber and/or processing components, reducing surface damage of the plasma to the processing chamber and/or processing component, Processing the service life of the chamber and/or the processing component, reducing the user's cost of use; further, in an alternative embodiment of the invention, the material of the processing chamber and/or the processing component is resistant to the The material of the etch layer is the same such that the processing chamber and/or the processing component are better able to resist plasma etching; further, in an alternative embodiment of the invention the processing chamber and/or The material of the processing component and the material of the anti-etching layer may also be different, so that after the anti-etching layer is used for a period of time, it may be chemical mechanical polishing, cleaning, etching or mechanical. The method removes the anti-etching layer and then re-forms a new anti-etching layer on the surface of the processing chamber and/or the processing component to better protect the processing chamber and/or processing component, extending the The service life of the chamber and/or processing components is processed to further reduce the user's cost of use.

For processing equipment using plasma, such as plasma etching equipment, plasma enhanced chemical vapor deposition equipment, MOCVD equipment (MOCVD equipment uses plasma to clean the processing chamber and processing components in situ), its processing chamber And the problem that the processing component is susceptible to damage by the plasma, the embodiment of the invention provides a semiconductor processing apparatus comprising: a processing chamber for introducing a source gas for performing a substrate placed in the processing chamber Correspondingly, and the processing chamber is further configured to receive a plasma, the processing chamber having a plurality of processing components, the semiconductor processing device further comprising: an anti-etching layer covering the processing chamber and/or The plasma exposed surface of the component is used to resist plasma etching and to protect the processing chamber and/or processing component. The semiconductor processing apparatus of the present invention is any semiconductor processing apparatus capable of generating a plasma within a processing chamber and which may cause plasma damage to processing components within the processing chamber and/or processing chamber, eg, the semiconductor processing The device may be a plasma etching device, a plasma enhanced chemical vapor deposition device, an MOCVD device, or the like. The processing chamber is typically a vacuum chamber that is capable of passing a source gas as a reactive gas and capable of generating a plasma. The processing component refers to all component parts located inside the processing chamber, such as a showerhead (SH), a heater, etc., the portion of the processing component exposed to the plasma environment and the processing The surface of the chamber is susceptible to damage from the plasma.

As an embodiment, the semiconductor processing device is an MOCVD device, and since the deposition process of the MOCVD device is usually a long time (6 to 9 hours) process performed in a high temperature (500 to 1200 degrees Celsius) environment, the processing chamber is processed. The quality requirements of the chamber and the processing components are higher. When cleaning the processing chamber and/or processing components with plasma, if the processing chamber and/or processing components are damaged, it is easier to reduce the yield of the product and may cause malfunction of the MOCVD equipment (which may affect the utilization of the MOCVD equipment). ).

The materials, shapes, structures, processing methods, and manufacturing methods of the processing chamber and the processing member are the same as those in the prior art, wherein the processing chamber and the processing member may be made of a ceramic material or an alloy material. In this embodiment, the material of the processing chamber and the processing component is an alloy material, because the alloy material has the advantages of high hardness, stable high temperature performance, and easy processing. The alloy material for making the processing chamber and the processing member according to the present invention may be a material such as aluminum alloy or stainless steel. Compared with the aluminum alloy, the stainless steel has a high melting point and a stable structure at a high temperature. Therefore, in the embodiment, the alloy material of the processing chamber and the processing member is stainless steel, and the stainless steel can be various types of stainless steel, such as SS316L. , SS304, etc., those skilled in the art can make specific choices.

The material of the anti-etching layer according to the present invention is a ceramic material. The ceramic material is Y ₂ O ₃ , Al ₂ O ₃ , YAG, YF ₃ , Er ₂ O ₃ , Gd ₂ O ₃ , RuO ₂ , Ir ₂ O ₃ , ZrO ₂ , AlN, SiC, Si ₃ N ₄ One or a combination thereof, or the ceramic material may also be a combination of the above materials and other materials.

In one embodiment of the invention, the processing chamber and/or processing component is made of stainless steel, the stainless steel being SS316L.

In still another embodiment of the present invention, the processing chamber and/or the processing component are made of the same material as the anti-etching layer, that is, the processing chamber and/or the processing component may be utilized. Fabricating the same material as the anti-etching layer to form a block-shaped processing chamber and/or processing component, without having to be specialized in the processing chamber and/or after processing chamber and/or processing component fabrication Or the surface of the processing component forms an anti-etching layer, and there is no need to consider the problems of stress and bonding strength between the processing chamber and/or the processing component and the anti-etching layer.

It should be noted that although the anti-etching layer can resist plasma etching, the long-term use still causes uneven thickness of the anti-etching layer, structural damage or surface contamination, and can be tested at this time. Obtaining an etching rate of an anti-etching layer by a plasma in a specific plasma and a processing chamber and a source gas environment, and the thickness and the period of use of the anti-etching layer can be obtained based on the etching rate. The use period = the thickness of the anti-etching layer / the etching rate of the plasma against the etching layer), and re-form a new anti-etching on the processing chamber and/or the processing part before the end of the use period of the anti-etching layer The etching layer, the method of forming the anti-etching layer, and the method of obtaining the etching rate of the plasma against an etching resist layer will be described later.

Accordingly, the present invention further provides a method of fabricating a semiconductor processing apparatus. Referring to the flowchart of the method of fabricating the semiconductor processing apparatus of the present invention shown in FIG. 2, the semiconductor processing apparatus includes: Step S1, providing a processing chamber or processing a processing chamber for introducing a source gas for corresponding processing of a substrate placed in the processing chamber, the processing chamber further for containing a plasma and the processing component; and step S2, The plasma-exposed surface of the processing chamber and/or the processing component forms an anti-etching layer for resisting plasma etching and protecting the processing chamber and/or processing components.

Wherein the semiconductor processing apparatus of the present invention is any semiconductor processing apparatus capable of generating plasma within the processing chamber and which may cause plasma damage to processing components in the processing chamber and/or processing chamber, for example, The semiconductor processing device may be a plasma etching device, a plasma enhanced chemical vapor deposition device, an MOCVD device, or the like. The processing chamber is typically a vacuum chamber that is capable of passing a source gas as a reactive gas and capable of generating a plasma. The processing component refers to all component parts located inside the processing chamber, such as a showerhead (SH), a heater, etc., the portion of the processing component exposed to the plasma environment and the processing The surface of the chamber is susceptible to damage from the plasma.

As an embodiment, the semiconductor processing device is an MOCVD device. The processing chamber is a processing chamber of an MOCVD apparatus, the processing component including at least a showerhead and a heating stage within a process chamber of an MOCVD apparatus. The manufacturing chamber and the processing member of the present invention are produced in the same manner as in the prior art, and are well known to those skilled in the art and will not be described in detail herein.

The material of the anti-etching layer of the present invention is a ceramic material. The ceramic material is Y ₂ O ₃ , Al ₂ O ₃ , YAG, YF ₃ , Er ₂ O ₃ , Gd ₂ O ₃ , RuO ₂ , Ir ₂ O ₃ , ZrO ₂ , AlN, SiC, Si ₃ N ₄ One or a combination of ceramics and other materials. In one embodiment of the present invention, the processing chamber and/or the processing member are made of the same material as the anti-etching layer, that is, the ceramic processing material is used to form a block-shaped processing chamber and/or The component is treated such that the anti-etching layer formed on the processing chamber and/or the surface of the processing component has a good bonding force, thereby improving the surface quality of the forming component.

In one embodiment of the invention, the method of fabricating the anti-etching layer is a plasma spray (thermal spray) process. In still another embodiment of the present invention, the anti-etching layer can be fabricated by a chemical vapor deposition process, a plasma enhanced chemical vapor deposition process, a physical vapor deposition process, a chemical sol gel process, or a chemical wet process. The method of the coating process, etc., can be flexibly selected by those skilled in the art according to the actual situation.

Correspondingly, the present invention also provides an anti-etching layer for resisting plasma etching. The material layer is made of a ceramic material, and the ceramic material is Y ₂ O ₃ , Al ₂ O ₃ , YAG, YF ₃ One of Er ₂ O ₃ , Gd ₂ O ₃ , RuO ₂ , Ir ₂ O ₃ , ZrO ₂ , AlN, SiC, Si ₃ N ₄ or a combination thereof with other materials. The inventors conducted related experiments to verify that the anti-etching layer provided by the embodiment of the present invention can effectively protect the processing chamber and/or the processing component, and obtain a case for a specific semiconductor processing apparatus, a specific plasma, or the like. The etch rate of a particular anti-etching layer. Taking the MOCVD equipment as an example, a shower head of an MOCVD apparatus is used as a test object, and the sprinkler is made of stainless steel. Specifically, please refer to the schematic diagram of the structure of the shower head for testing the etching rate of the anti-etching layer in combination with an embodiment of the present invention shown in FIG. 3. The middle portion of the shower head 100 has a plurality of holes 1001. Outside the shower head 100, three test samples are placed, which are a first test sample 101, a second test sample 102, and a third test sample 103, respectively. The center of the surface of each test sample is the same distance from the center of the shower head 100.

The manufacturing method of the first test sample 101, the second test sample 102, and the third test sample 103 includes: first, providing three basic samples, the material of the basic sample is the same as the material of the shower head 100, and The shape, size and processing method of the three basic samples are the same. As an embodiment, the basic sample is made of SS316L; then, two anti-etch layers are formed on the surface of the two basic samples, but two Half of the area of the etch-resistant layer of the base sample covers the cymbal while the surface of the other half of the area is bare; while the surface of one half of the remaining one basic sample is bare, and the surface of the other half covers the cymbal. The surface of the above three basic samples covered the same position of the sepals. For example, a first anti-etching layer is formed on the surface of the first basic sample, a surface 1011 of a half area of the first anti-etching layer is exposed, and a surface 1012 of the other half area covers the crotch, and the first basic sample is As a first test sample 101, as an embodiment, the first anti-etching layer 1011 is made of Y ₂ O ₃ ; the second basic sample has a second anti-etching layer on the surface, and the second anti-etching layer The surface 1021 of the half area of the layer is exposed, the surface 1022 of the other half area covers the cymbal, and the second basic sample is used as the second test sample 102. As an embodiment, the material of the second etch resistant layer 1021 is Al ₂ O ₃ ; the surface 1031 of the half area of the third substrate sample is exposed, and the surface 1032 of the other half area covers the cymbal, and the third basic sample is used as the third test sample 103.

During the test, the respective test samples are installed together with the shower head 100 in an MOCVD apparatus, and the processing chamber of the MOCVD performs an acid plasma using a mixed gas of HCl and Ar, and the flow ratio of the mixed gas ranges from 0.6:1~1.4:1, the pressure of the processing chamber ranges from 0 to 1.5 Torr, the flow rate ranges from 0.3 to 0.8 slm, and the frequency of the RF power source that generates the plasma is a low frequency signal (frequency range is 10-20 MHz). The RF power range is 1000~2000 watts. The temperature range in the process chamber during testing is 300~700 degrees Celsius, the heating distance range is 10~22 mm, and the plasma is tested under the above conditions. The test time is greater than at least 8 hours. .

According to the above test conditions, the amount of decrease in the thickness of the anti-etching layer on the surface of the first test sample 101 and the second test sample 102, and the material of the surface 1031 of the third test sample 103 that are not covered by the wafer, respectively. (ie stainless steel SS316L) thickness reduction, combined with the test time, testing the second anti-etching on the first anti-etching layer 1011 and the second test sample 102 on the first test sample 101 by the plasma under the above test conditions The etch rate of the layer 1021 and the etch rate of the region 1031 of the third test specimen 103 that is not covered by the slab (ie, the stainless steel material SS316L), and then the first etch resistant layer 1011 and the second etch resistant layer 1021 are calculated. The relative etching rate of the material of the region 1031 of the third test sample 103 that is not covered with the slab (ie, stainless steel) is as follows: the material of the third test sample 103 is SS316L, and the material is Y ₂ O ₃ . The relative etching rate of the first anti-etching layer 1011 is only 12.0% of the SS316L, and the relative etching rate of the second anti-etching layer 1021 made of Al ₂ O ₃ is only 22.5% of the SS316L. According to the above relative etching rate, the etching process is performed by using the same plasma, and the etching rate is the same regardless of the use of the Y ₂ O _{3 of the} first anti-etching layer 1011 or the Al ₂ O _{3 of the} second anti-etching layer 1021. It is much smaller than the etching rate of the stainless steel layer, so the anti-etching layer has a good resistance to plasma etching and, therefore, can be used for protection of the processing chamber and or processing components.

Other related experiments conducted by the inventors have also demonstrated that the relative etching rate of the ceramic material using Y ₂ O ₃ is 11% of SS316L, and the relative etching rate of the ceramic material of Al ₂ O ₃ is 20% of SS316L.

In summary, embodiments of the present invention form an anti-etching layer on a plasma-exposed surface of a processing chamber of a semiconductor processing apparatus and/or a processing component, such that the anti-etching layer is resistant to plasma during in-situ chemical cleaning. Body etching and protection of the processing chamber and/or processing components, reducing surface damage to the processing chamber and/or processing components by plasma, increasing the service life of the processing chamber and/or processing components Further, in an optional embodiment of the present invention, the processing chamber and/or the processing component are made of the same material as the anti-etching layer, so that the processing chamber The chamber and/or the processing component are better able to resist plasma etching; further, in alternative embodiments of the invention, the material of the processing chamber and/or the processing component is resistant to the The material of the etch layer may also be different, so that after the anti-etching layer is used for a period of time, the anti-etching layer may be removed by chemical mechanical polishing, cleaning, etching or mechanical means, and then re-indicated therein. Forming a new anti-etching layer on the surface of the chamber and/or the processing component to better protect the processing chamber and/or processing component, extending the useful life of the processing chamber and/or processing component, thereby Further reduce the user's use cost.

Although the invention has been disclosed above in the preferred embodiments, the invention is not limited thereto. Any changes and modifications can be made by those skilled in the art without departing from the spirit and scope of the invention, and the scope of the invention should be determined by the scope of the claims.

10‧‧‧Sprinkler
20‧‧‧heated graphite base
30‧‧‧Substrate to be processed
40‧‧‧Processing chamber
100‧‧‧Sprinkler
1001‧‧‧ hole
101‧‧‧First test sample
1011‧‧‧First anti-etching layer
1012‧‧‧ surface
102‧‧‧Second test sample
1021‧‧‧second anti-etching layer
1022‧‧‧ surface
103‧‧‧ third test sample
1031‧‧‧ surface
1032‧‧‧ surface

1 is a schematic structural view of a conventional MOCVD apparatus; FIG. 2 is a schematic flow chart of a manufacturing method of a semiconductor processing apparatus of the present invention; and FIG. 3 is a showerhead for testing an etching rate of an etching resistant layer according to an embodiment of the present invention; Schematic.

Claims (8)

An MOCVD semiconductor processing apparatus includes a processing chamber for introducing a source gas, correspondingly processing a substrate placed in a processing chamber, and the processing chamber is further configured to accommodate a plasma, The plasma is used for in-situ chemical cleaning, the processing chamber having a plurality of processing components, wherein the MOCVD semiconductor processing apparatus includes: an anti-etching layer covering the processing chamber and/or processing component exposure On the surface of the plasma, the anti-etching layer is used to resist plasma etching and protect the processing chamber and/or processing component during in-situ chemical cleaning, the anti-etching layer is made of ceramic Material, the ceramic material is Y ₂ O ₃ , Al ₂ O ₃ , YAG, YF ₃ , Er ₂ O ₃ , Gd ₂ O ₃ , RhO ₂ , Ir ₂ O ₃ , AlN, SiC, Si ₃ N ₄ One or a combination thereof. The MOCVD semiconductor processing apparatus according to claim 1, wherein a material of the processing chamber and/or the processing member is the same as or different from a material of the anti-etching layer. The MOCVD semiconductor processing apparatus according to claim 1, wherein the processing chamber and/or the processing member are made of a stainless steel material. A method of fabricating an MOCVD semiconductor processing apparatus, comprising: providing a processing chamber or a processing component, wherein the processing chamber is configured to pass a source gas, and correspondingly process a substrate placed in the processing chamber, the processing chamber further For accommodating a plasma and the processing component; the plasma is used for in-situ chemical cleaning of the processing chamber and the processing component, wherein the MOCVD semiconductor processing apparatus is fabricated by: The chamber and/or the plasma-exposed surface of the processing component form an anti-etching layer for resisting plasma etching and protecting the processing chamber during in-situ chemical cleaning and/or Or a processing member, the material of the anti-etching layer is ceramic material, and the ceramic material is Y ₂ O ₃ , Al ₂ O ₃ , YAG, YF ₃ , Er ₂ O ₃ , Gd ₂ O ₃ , RuO ₂ , Ir _{One of 2} O ₃ , AlN, SiC, Si ₃ N ₄ or a combination thereof. The manufacturing method according to claim 4, wherein a material of the processing chamber and/or the processing member is the same as or different from a material of the anti-etching layer. The manufacturing method according to claim 4, wherein after the etching resist layer is used for a period of time, the anti-etching layer is removed by chemical mechanical polishing, cleaning, etching or mechanical means, and is re-in the processing chamber. And/or a surface of the processing component forms a new anti-etching layer. The manufacturing method according to claim 4, wherein the anti-etching layer is formed by a plasma spraying process, a chemical vapor deposition process, a plasma enhanced chemical vapor deposition process, a physical vapor deposition process, or a chemical sol condensation process. Glue process, chemical wet coating process or a combination thereof. The manufacturing method according to claim 4, wherein the processing chamber and/or the processing member are made of a stainless steel material.