TW201326457A - Showerhead for MOCVD apparatus and method of using and manufacturing the same - Google Patents

Showerhead for MOCVD apparatus and method of using and manufacturing the same Download PDF

Info

Publication number
TW201326457A
TW201326457A TW101127579A TW101127579A TW201326457A TW 201326457 A TW201326457 A TW 201326457A TW 101127579 A TW101127579 A TW 101127579A TW 101127579 A TW101127579 A TW 101127579A TW 201326457 A TW201326457 A TW 201326457A
Authority
TW
Taiwan
Prior art keywords
layer
protective layer
shower head
plasma
initial
Prior art date
Application number
TW101127579A
Other languages
Chinese (zh)
Other versions
TWI494465B (en
Inventor
Xiao-Ming He
Tu-Qiang Ni
Original Assignee
Advanced Micro Fab Equip Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Fab Equip Inc filed Critical Advanced Micro Fab Equip Inc
Publication of TW201326457A publication Critical patent/TW201326457A/en
Application granted granted Critical
Publication of TWI494465B publication Critical patent/TWI494465B/zh

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)

Abstract

This invention provides a showerhead for an MOCVD apparatus and a method of using and manufacturing the same. The manufacturing method comprises: manufacturing a showerhead body; and forming a regenerative protection layer on the surface of the showerhead body, wherein the regenerative protection layer is used to protect the showerhead body from being etched by the chemical reactive gas and/or plasma during the MOCVD process. The showerhead formed thereby comprises: a showerhead body and a regenerative protection layer on the surface of the showerhead body for protecting the showerhead body. The using method comprises: after the showerhead has been used for a period of time, performing the recycling regeneration on the regenerative material layer to form the recycled protection layer on the regenerative material layer. The embodiment of this invention can effectively protect the showerhead, prolong the service life of the showerhead, and increase the quality of extension layer formed thereby and the utilization rate of the MOCVD apparatus.

Description

MOCVD設備之噴淋頭及其製作方法和使用方法 Shower head of MOCVD equipment and manufacturing method and using method thereof

本發明涉及半導體技術領域,特別是關於一種MOCVD設備之噴淋頭及其製作方法和使用方法。 The present invention relates to the field of semiconductor technology, and more particularly to a shower head for an MOCVD apparatus, a method of fabricating the same, and a method of using the same.

MOCVD是金屬有機化合物化學氣相沉積(Metal-organic Chemical Vapor Deposition)的英文縮寫。MOCVD是在氣相外延生長(VPE)的基礎上發展起來的一種新型氣相外延生長技術。它以Ⅲ族、Ⅱ族元素的有機化合物和V、Ⅵ族元素的氫化物等作為晶體生長源材料,以熱分解反應方式在襯底上進行氣相外延,生長各種Ⅲ-V族、Ⅱ-Ⅵ族化合物半導體以及它們的多元固溶體的薄層單晶材料。通常MOCVD系統中的晶體生長都是在常壓或低壓(10-100Torr)的冷壁石英(不銹鋼)反應室中進行,並採用H2作為載氣(Carrier Gas),襯底溫度為500-1200℃,用射頻感應加熱石墨基座(襯底基片在石墨基座上方),H2通過溫度可控的液體源鼓泡攜帶金屬有機物到生長區。 MOCVD is an abbreviation for Metal-organic Chemical Vapor Deposition. MOCVD is a new type of vapor phase epitaxy technology developed on the basis of vapor phase epitaxy (VPE). It uses organic compounds of group III and II elements and hydrides of group V and VI as crystal growth source materials, and performs vapor phase epitaxy on the substrate by thermal decomposition reaction to grow various III-V groups and II- A thin layer single crystal material of a Group VI compound semiconductor and their multiple solid solution. Generally, the crystal growth in the MOCVD system is carried out in a cold-wall quartz (stainless steel) reaction chamber at normal pressure or low pressure (10-100 Torr), and H2 is used as a carrier gas (Carrier Gas) at a substrate temperature of 500-1200 ° C. The graphite base is heated by radio frequency induction (the substrate is above the graphite base), and H2 is bubbled to carry the metal organic matter to the growth zone through a temperature controlled liquid source.

具體請參閱圖1所示的現有的MOCVD內部結構示意圖。工藝腔室40內具有加熱石墨基座20,所述加熱石墨基座20上放置若干待處理晶圓30,噴淋頭(shower head,SH)10與所述加熱石墨基座20和待處理晶圓30相對放置,所述噴淋頭10的材質為不銹鋼等材質,所述噴淋頭10中具有多個孔洞,該噴淋頭10通過所述空洞將氣態物質噴灑於待處理晶圓30上方,在所述待處理晶圓30上方產生化學反應,形成的反應物質沉積在所述處理晶圓30上,形成外延層。 For details, please refer to the existing MOCVD internal structure diagram shown in FIG. The process chamber 40 has a heated graphite susceptor 20 on which a plurality of wafers 30 to be processed are placed, a shower head (SH) 10 and the heated graphite susceptor 20 and the crystal to be treated. The sprinkler head 10 is made of a material such as stainless steel. The sprinkler head 10 has a plurality of holes therein, and the shower head 10 sprays a gaseous substance on the wafer 30 to be processed through the cavity. A chemical reaction is generated above the wafer 30 to be processed, and a formed reaction substance is deposited on the processing wafer 30 to form an epitaxial layer.

在申請號為US20050136188的美國專利申請中可以發現更多關於現有的MOCVD設備的資訊。 Further information on existing MOCVD equipment can be found in U.S. Patent Application Serial No. US20050136188.

本發明為解決習知技術之問題是提供了一種MOCVD設備之噴淋頭及其製作方法和使用方法,用於提高MOCVD設備形成的外延層的品質,並且可以提高MOCVD設備的利用率。 SUMMARY OF THE INVENTION The present invention provides a shower head for an MOCVD apparatus, a method of fabricating the same, and a method of using the same, for improving the quality of an epitaxial layer formed by an MOCVD apparatus, and improving the utilization of the MOCVD apparatus.

為解決習知技術之問題,本發明所採用之技術手段為提供一種MOCVD設備的噴淋頭的製作方法,包括:製作噴淋頭主體;在所述噴淋頭主體表面形成可再生保護層,所述可再生保護層用於保護所述噴淋頭主體免於MOCVD過程中化學反應氣體和/或等離子體的刻蝕。 In order to solve the problems of the prior art, the technical means adopted by the present invention is to provide a method for manufacturing a shower head of an MOCVD apparatus, comprising: fabricating a shower head body; forming a reproducible protective layer on a surface of the shower head body, The regenerable protective layer serves to protect the showerhead body from etching of chemical reaction gases and/or plasma during MOCVD.

較佳的,所述可再生保護層的製作方法包括:在所述噴淋頭表面形成可再生材料層;所述可再生材料層的厚度範圍為0.005~150毫米。 Preferably, the method for manufacturing the reproducible protective layer comprises: forming a layer of a reproducible material on the surface of the shower head; the thickness of the recyclable material layer ranges from 0.005 to 150 mm.

對所述可再生材料層進行初始再生操作,形成初始保護層,所述初始保護層與所述可再生材料層構成所述可再生保護層,所述初始保護層的厚度範圍為0.001~30毫米。 Performing an initial regeneration operation on the recyclable material layer to form an initial protective layer, the initial protective layer and the recyclable material layer constituting the reproducible protective layer, the initial protective layer having a thickness ranging from 0.001 to 30 mm .

較佳的,所述可再生材料層的材質為合金材料或陶瓷材料,所述合金材料包括Y、Er、Rh、Ir中的一種或多種,所述陶瓷材料包括Y2O3、Er2O3、YF3中的一種或多種。 Preferably, the material of the renewable material layer is an alloy material or a ceramic material, and the alloy material includes one or more of Y, Er, Rh, and Ir, and the ceramic material includes one of Y2O3, Er2O3, and YF3. Or a variety.

較佳的,所述初始再生操作包括:對所述可再生材料層進行加熱,在加熱的同時通入再生氣體,所述再生氣體與所述可再生材料層結合,形成初始保護層;或在對所述可再生材料層進行所述加熱 的同時在所述可再生材料層表面通入再生等離子體,所述再生等離子體與所述可再生材料層結合,形成初始保護層;或在所述可再生材料層表面通入再生等離子體,所述再生等離子體與所述可再生材料層結合,形成初始保護層。 Preferably, the initial regeneration operation comprises: heating the layer of renewable material, and introducing a regeneration gas while heating, the regeneration gas is combined with the layer of renewable material to form an initial protective layer; or Heating the layer of renewable material At the same time, a regenerative plasma is introduced into the surface of the regenerable material layer, and the regenerated plasma is combined with the recyclable material layer to form an initial protective layer; or a regenerative plasma is introduced into the surface of the regenerable material layer. The regenerative plasma is combined with the layer of renewable material to form an initial protective layer.

較佳的,所述再生氣體為氧氣、氟氣中的一種或者兩者的組合;所述再生等離子為氧離子、氟離子中的一種或兩者的結合,所述加熱溫度範圍為50~1200攝氏度。 Preferably, the regeneration gas is one of oxygen or fluorine gas or a combination of the two; the regeneration plasma is a combination of one or both of oxygen ions and fluoride ions, and the heating temperature ranges from 50 to 1200. Celsius.

較佳的,所述可再生材料層通過利用焊接、電鍍、軋製、滾壓、濺射或沉積工藝製作,使所述再生材料層與噴淋頭主體組合在一起。 Preferably, the layer of renewable material is fabricated by welding, electroplating, rolling, rolling, sputtering or deposition processes to combine the layer of recycled material with the body of the showerhead.

相應地,本發明還提供一種MOCVD設備之噴淋頭,包括:噴淋頭主體;可再生保護層,位於所述噴淋頭主體的外表,所述可再生保護層用於保護所述噴淋頭主體免於MOCVD過程中化學反應氣體和/或等離子體的刻蝕。 Accordingly, the present invention also provides a shower head of an MOCVD apparatus, comprising: a shower head body; a reproducible protective layer on an outer surface of the shower head body, the regenerable protective layer for protecting the shower The head body is free of etching of chemical reaction gases and/or plasma during MOCVD.

較佳的,所述可再生保護層包括:可再生材料層,位於所述噴淋頭主體的表面;所述可再生材料層的厚度可為0.005~150毫米;初始保護層,位於所述可再生材料層表面,所述初始保護層與所述可再生材料層構成所述可再生保護層;所述初始保護層的厚度可為0.001~30毫米。 Preferably, the reproducible protective layer comprises: a layer of renewable material located on a surface of the shower head body; the layer of the recyclable material may have a thickness of 0.005-150 mm; an initial protective layer located at the And a surface of the regenerated material layer, the initial protective layer and the recyclable material layer constitute the reproducible protective layer; the initial protective layer may have a thickness of 0.001 to 30 mm.

較佳的,所述可再生材料層的材質為合金材料或陶瓷材料,所述合金材料包括Y、Er、Rh、Ir中的一種或多種,所述陶瓷材料包括Y2O3、Er2O3、YF3中的一種或多種;所述初始保護層的材料為所述可再生材料層 與氧元素和/或氟元素的結合。 Preferably, the material of the renewable material layer is an alloy material or a ceramic material, and the alloy material includes one or more of Y, Er, Rh, and Ir, and the ceramic material includes one of Y2O3, Er2O3, and YF3. Or a plurality of; the material of the initial protective layer is the layer of the renewable material Combination with oxygen and/or fluorine.

相應地,本發明還提供一種所述方法製作的MOCVD設備的噴淋頭的使用方法,在所述噴淋頭使用一段時間後,對所述可再生材料層進行迴圈再生,在所述可再生材料層表面形成迴圈保護層;所述迴圈保護層的厚度範圍為0.001~15毫米。 Correspondingly, the present invention also provides a method of using a shower head of an MOCVD apparatus manufactured by the method, after the shower head is used for a period of time, regenerating the layer of the recyclable material, A surface protective layer is formed on the surface of the recycled material layer; the thickness of the loop protective layer ranges from 0.001 to 15 mm.

較佳的,所述迴圈再生包括:對所述可再生材料層進行加熱,在加熱的同時通入再生氣體,所述再生氣體與所述可再生材料層結合,形成迴圈保護層;或在對所述可再生材料層進行所述加熱的同時在所述可再生材料層表面通入再生等離子體,所述再生等離子體與所述可再生材料層結合,形成迴圈保護層;或在所述可再生材料層表面通入再生等離子體,所述再生等離子體與所述可再生材料層結合,形成迴圈保護層。 Preferably, the loop regeneration comprises: heating the layer of renewable material, and introducing a regeneration gas while heating, the regeneration gas being combined with the layer of renewable material to form a loop protection layer; or Regenerating plasma is introduced into the surface of the regenerable material layer while the heating of the recyclable material layer is performed, and the regenerative plasma is combined with the recyclable material layer to form a loop protective layer; A surface of the regenerable material layer is passed through a regenerative plasma, and the regenerated plasma is combined with the layer of recyclable material to form a loop protective layer.

較佳的,所述再生氣體為氧氣、氟氣中的一種或者兩者的組合;所述再生等離子體為氧離子、氟離子中的一種或兩者的結合,所述加熱溫度範圍為50~1200攝氏度。 Preferably, the regeneration gas is one of oxygen or fluorine gas or a combination of the two; the regeneration plasma is a combination of one or both of oxygen ions and fluoride ions, and the heating temperature ranges from 50 to 50. 1200 degrees Celsius.

較佳的,所述一段時間小於等於所述可再生保護層表面的初始保護層或迴圈保護層的使用週期。 Preferably, the period of time is less than or equal to a period of use of the initial protective layer or the loop protective layer of the surface of the regenerable protective layer.

與習知技術相比,本發明實施例具有以下優點:通過在噴淋頭主體表面形成可再生保護層,所述可再生保護層用於保護噴淋頭主體,所述可再生保護層與噴淋頭主體、MOCVD工藝的源氣體、源氣體發生反應形成的物質、化學清潔方式的酸性離子或鹼性離子之間基本不會發生化學反應,由於形成有可再生保護層,從而可以採用化學方式清潔噴淋頭,防止噴淋頭表面堆積 的物質影響外延層的生長品質,也可以防止利用機械方式清潔噴淋頭而降低MOCVD設備的利用率;由於所述可再生保護層基本不會與化學清潔方式中使用的酸性離子或鹼性離子發生反應,因此可再生保護層可以保護噴淋頭,提高噴淋頭的使用壽命,並且該可再生保護層可以迴圈使用,進一步提高了噴淋頭的使用壽命。 Compared with the prior art, the embodiment of the invention has the following advantages: by forming a reproducible protective layer on the surface of the shower head body, the regenerable protective layer is used to protect the shower head body, the regenerative protective layer and the spray There is almost no chemical reaction between the main body of the shower head, the source gas of the MOCVD process, the substance formed by the reaction of the source gas, the acidic ion or the alkaline ion of the chemical cleaning method, and the chemical layer can be formed by the formation of the reproducible protective layer. Clean the sprinkler to prevent the surface of the sprinkler from accumulating The substance affects the growth quality of the epitaxial layer, and also prevents mechanical cleaning of the shower head to reduce the utilization of the MOCVD equipment; since the regenerable protective layer is substantially free from acidic or alkaline ions used in chemical cleaning methods. The reaction occurs, so the regenerative protective layer protects the sprinkler and increases the life of the sprinkler, and the recyclable protective layer can be used in a loop to further increase the life of the sprinkler.

本發明所採用的具體實施例,將藉由以下之實施例及附呈圖式作進一步之說明。 The specific embodiments of the present invention will be further described by the following examples and the accompanying drawings.

利用現有的MOCVD設備形成的外延層的品質不高,現有的MOCVD設備的利用率(uptime)偏低。經過發明人研究發現,由於MOCVD設備的噴淋頭在工藝過程中副產物以及化學反應的物質會堆積在部分噴淋頭的孔洞內部以及噴淋頭的外部,尤其是噴淋頭靠近加熱基座的表面,造成噴淋頭的堵塞以及噴淋頭外表形成顆粒物,所述顆粒在長時間的MOCVD工藝過程中可能會剝落並附著於待處理晶圓表面,形成顆粒污染,影響外延層的品質,並且噴淋頭堵塞也會影響外延層的均勻度和沉積速度,從而降低MOCVD設備的利用率。 The quality of the epitaxial layer formed by the existing MOCVD equipment is not high, and the utilization time of the existing MOCVD equipment is low. According to the inventor's research, the by-products and chemically reacted substances in the sprinklers of the MOCVD equipment are accumulated inside the holes of some sprinklers and outside the sprinklers, especially the sprinklers are close to the heating base. The surface causes clogging of the shower head and the formation of particulate matter on the exterior of the shower head. The particles may peel off and adhere to the surface of the wafer to be treated during a long-term MOCVD process, forming particle contamination and affecting the quality of the epitaxial layer. And the sprinkler head blockage also affects the uniformity of the epitaxial layer and the deposition rate, thereby reducing the utilization of MOCVD equipment.

若採用機械方式定期(即每次沉積工藝完成後)清潔所述MOCVD設備的噴淋頭,即採用金屬刷子對噴淋頭表面進行刷洗清潔,將噴淋頭表面和孔洞中堆積的物質去除,從而能夠保持噴淋頭表面較為清潔。但是機械方式清潔中斷MOCVD的連續生產並需要佔用MOCVD用於生產的時間,從而降低MOCVD設備的利用率。 If the sprinkler of the MOCVD device is cleaned periodically by mechanical means (ie, after each deposition process is completed), the surface of the shower head is brushed and cleaned with a metal brush to remove the accumulated substances on the surface of the shower head and the holes. Thereby the surface of the shower head can be kept relatively clean. However, mechanical cleaning interrupts the continuous production of MOCVD and requires the time spent on MOCVD for production, thereby reducing the utilization of MOCVD equipment.

若採用原位化學方式(in-situ chemical)清潔,可以利用包含有酸性離子或鹼性離子的等離子體轟擊或刻蝕噴淋頭表面,但是所述方法會在將噴淋頭表面堆積的 物質去除的同時損傷下方的噴淋頭。例如,不銹鋼製備的噴淋頭易於被包含鹵族元素的等離子體刻蝕。這種等離子體的刻蝕不僅能造成噴淋頭表面不平整,而且會縮短噴淋頭的使用壽命。 If in-situ chemical cleaning is used, the surface of the showerhead can be bombarded or etched using a plasma containing acidic or basic ions, but the method will accumulate on the surface of the showerhead. The material is removed while damaging the underlying showerhead. For example, sprinklers made of stainless steel are susceptible to plasma etching involving halogen elements. This plasma etching not only causes the surface of the showerhead to be uneven, but also shortens the life of the showerhead.

發明人考慮在噴淋頭表面形成保護物質,該保護物質能夠保護噴淋頭,防止以及延緩噴淋頭在原位化學方式清潔過程中的損傷,並且該保護物質能定期進行更新。 The inventors contemplate the formation of a protective substance on the surface of the showerhead that protects the sprinkler, prevents and delays damage to the sprinkler during in-situ chemical cleaning, and that the protective material can be periodically renewed.

具體地,發明人提出的MOCVD設備的噴淋頭的製作方法請參閱圖2所示的本發明一個實施例的MOCVD設備的噴淋頭的製作方法流程示意圖,所述方法包括:步驟S1,製作噴淋頭主體;步驟S2,在所述噴淋頭主體表面形成可再生保護層,所述可再生保護層用於保護所述噴淋頭主體免於MOCVD過程中化學反應氣體及等離子體的刻蝕。 Specifically, a method for fabricating a shower head of an MOCVD apparatus proposed by the inventors, see a flow chart of a method for fabricating a shower head of an MOCVD apparatus according to an embodiment of the present invention shown in FIG. 2, the method comprising: step S1, making a shower head body; step S2, forming a reproducible protective layer on the surface of the shower head body, the regenerable protective layer for protecting the shower head body from chemical reaction gases and plasma during MOCVD eclipse.

下面結合具體的實施例對本發明的技術方案進行詳細的說明。為了更好地說明本發明的技術方案,請參閱圖3~圖4所示的本發明一個實施例的MOCVD設備的噴淋頭的製作方法的剖面結構示意圖。 The technical solution of the present invention will be described in detail below with reference to specific embodiments. In order to better explain the technical solution of the present invention, please refer to the cross-sectional structural diagram of the method for fabricating the shower head of the MOCVD apparatus according to an embodiment of the present invention shown in FIGS. 3 to 4.

首先,請參閱圖3,製作噴淋頭主體100。所述噴淋頭主體100的材質可以為不銹鋼、鋁合金等。本實施例中,所述噴淋頭主體100的材質為型號為SS304的不銹鋼。所述噴淋頭主體100上形成有多個孔洞(圖中未示出)。所述噴淋頭主體100的製作方法與現有技術相同,作為本領域技術人員的公知技術,在此不做詳細的說明。 First, referring to FIG. 3, the shower head main body 100 is produced. The material of the shower head main body 100 may be stainless steel, aluminum alloy or the like. In this embodiment, the material of the shower head main body 100 is stainless steel of the model SS304. A plurality of holes (not shown) are formed in the shower head main body 100. The manufacturing method of the shower head main body 100 is the same as that of the prior art, and a well-known technique of those skilled in the art will not be described in detail herein.

然後,請繼續參閱圖3,在所述噴淋頭主體100表面形成可再生材料層101,所述可再生材料層101用於 在後續在其表面形成初始保護層。所述初始保護層與所述可再生材料層構成所述可再生保護層。所述可再生材料層101與所述噴淋頭主體100不會發生化學反應,可以用於保護噴淋頭主體100。所述可再生材料層101可以利用焊接、電鍍、軋製、滾壓、濺射或沉積等工藝製作,使其再生材料與噴淋頭的主體100組合在一起。作為一個實施例,所述可再生材料層101的厚度範圍為0.005~150毫米,例如所述可再生材料層101的厚度範圍為1毫米、10毫米、50毫米、70毫米或150毫米;在本發明的又一實施例中,所述可再生材料層101的厚度範圍還可以為0.005~30毫米。 Then, referring to FIG. 3, a layer of reproducible material 101 is formed on the surface of the shower head body 100, and the layer of recyclable material 101 is used for An initial protective layer is subsequently formed on the surface thereof. The initial protective layer and the layer of renewable material constitute the renewable protective layer. The regenerable material layer 101 does not chemically react with the shower head body 100 and can be used to protect the shower head body 100. The layer of recyclable material 101 can be fabricated by processes such as welding, electroplating, rolling, rolling, sputtering, or deposition to combine the recycled material with the body 100 of the showerhead. As an embodiment, the thickness of the renewable material layer 101 ranges from 0.005 to 150 mm, for example, the thickness of the regenerable material layer 101 ranges from 1 mm, 10 mm, 50 mm, 70 mm or 150 mm; In still another embodiment of the invention, the thickness of the layer of renewable material 101 may also range from 0.005 to 30 mm.

所述可再生材料層101的材質為Y、Er、Rh、Ir等金屬材料中的一種或其中的組合,或者為所述可再生材料層101的材質可以為含有上述金屬元素的合金材料;或所述可再生材料層101的材質為Y2O3、Er2O、YF3等化合物,或者所述可再生材料層101的材質可以為含有上述化合物的陶瓷材料。作為一個實施例,所述可再生材料層101的材質為Y,其可以與氧元素或/和氟元素反應,形成性能穩定的初始保護層。 The material of the renewable material layer 101 is one or a combination of metal materials such as Y, Er, Rh, Ir, or the material of the renewable material layer 101 may be an alloy material containing the above metal elements; or The material of the recyclable material layer 101 is a compound such as Y2O3, Er2O, or YF3, or the material of the recyclable material layer 101 may be a ceramic material containing the above compound. As an embodiment, the material of the regenerable material layer 101 is Y, which can react with oxygen or/and fluorine to form a stable protective initial protective layer.

需要說明的是,圖中僅示出了所述可再生材料層101形成於所述噴淋頭主體100的一個表面,在實際中,所述噴淋頭主體100的所有可能受到源物質、源物質發生化學反應後的物質、化學方式清潔的酸性離子或鹼性離子的接觸表面均需要形成可再生材料層,以有效保護噴淋頭主體100。 It should be noted that only the recyclable material layer 101 is formed on one surface of the shower head main body 100. In practice, all the sprinkler heads 100 may be subjected to source materials and sources. The contact surface of the substance after the chemical reaction of the substance, the chemically clean acidic ion or the alkaline ion needs to form a layer of the recyclable material to effectively protect the shower head body 100.

接著,請參閱圖4,對所述可再生材料層101進行初始再生操作,形成初始保護層102,所述初始保護層102與所述可再生材料層101構成可再生保護層。所述 可再生保護層用於保護噴淋頭主體100,在利用化學方式清潔所述噴淋頭表面時,所述可再生保護層基本不會與化學方式清潔時的酸性離子或鹼性離子反應,也不會與MOCVD工藝過程中的源氣體或源氣體之間發生化學反應後的物質反應,因此所述可再生保護層可以有效保護噴淋頭主體100,防止酸性離子或鹼性離子損傷噴淋頭主體100的表面。 Next, referring to FIG. 4, the reproducible material layer 101 is subjected to an initial regeneration operation to form an initial protective layer 102, and the initial protective layer 102 and the recyclable material layer 101 constitute a reproducible protective layer. Said The regenerable protective layer is used to protect the shower head body 100, and when the surface of the shower head is chemically cleaned, the regenerable protective layer does not substantially react with acidic ions or alkaline ions during chemical cleaning, The material does not react with the source gas or the source gas during the MOCVD process, so the regenerable protective layer can effectively protect the shower head body 100 from acid ions or alkaline ions. The surface of the body 100.

作為一個實施例,所述初始再生操作包括:對所述可再生材料層101進行加熱,在加熱的同時通入再生氣體,所述再生氣體與所述可再生材料層101結合,形成初始保護層102;或對所述可再生材料層101進行加熱,在加熱的同時使所述可再生材料層101表面接觸再生等離子體,所述再生等離子體中的離子,原子或氣體分子與所述可再生材料層101結合,形成初始保護層102;或使所述可再生材料層101表面接觸再生等離子體,所述再生等離子體中的離子,原子或氣體分子與所述可再生材料層110結合,形成初始保護層102。作為一個實施例,所述初始保護層102的厚度範圍為0.001~30毫米。 As an embodiment, the initial regeneration operation includes: heating the renewable material layer 101, and introducing a regeneration gas while heating, the regeneration gas being combined with the renewable material layer 101 to form an initial protective layer. 102; or heating the regenerable material layer 101, contacting the surface of the regenerable material layer 101 with a regenerative plasma while heating, ions, atoms or gas molecules in the regenerated plasma and the regenerable The material layer 101 is combined to form an initial protective layer 102; or the surface of the regenerable material layer 101 is brought into contact with a regenerative plasma, and ions, atoms or gas molecules in the regenerative plasma are combined with the recyclable material layer 110 to form Initial protective layer 102. As an embodiment, the initial protective layer 102 has a thickness ranging from 0.001 to 30 mm.

作為一個實施例,所述再生氣體應為可與再生材料表面反應並能形成保護層的氣體,例如包括但不局限於氧氣、氟氣中的一種或者兩者的組合;所述再生等離子體應為包含但不局限於氧離子、氟離子中的一種或兩者的結合,所述加熱溫度範圍為50~1200攝氏度。 As an embodiment, the regeneration gas should be a gas that can react with the surface of the recycled material and can form a protective layer, such as, but not limited to, one of oxygen, fluorine gas, or a combination of both; The heating temperature ranges from 50 to 1200 degrees Celsius for inclusion of, but not limited to, one or a combination of oxygen ions, fluoride ions, or both.

需要說明的是,由於MOCVD設備採用化學等離子體方式的酸性離子或鹼性離子對噴淋頭表面進行清潔,因此,所述MOCVD設備已經具備了等離子體產生裝置,所述再生等離子不需要在MOCVD設備中額外增 加等離子體產生裝置,而是可以直接利用MOCVD設備中已經具有的等離子體產生裝置產生所述再生等離子體。 It should be noted that since the MOCVD apparatus cleans the surface of the shower head by chemical plasma or alkaline ions, the MOCVD apparatus already has a plasma generating apparatus, and the regenerated plasma does not need to be in the MOCVD. Extra increase in equipment The plasma generating device is added, but the regenerative plasma can be directly generated by using a plasma generating device already in the MOCVD apparatus.

雖然在實際中,噴淋頭主體100和可再生材料層101被安裝在MOCVD設備之前,由於空氣中氧氣等氧化作用,可能所述可再生材料層101表面也會形成一層自然氧化層,該自然氧化層的材質和初始保護層102的材質相同(當所述初始保護層102為氧元素與可再生材料層101反應形成),但是所述自然氧化層的厚度較薄,不足以有效保護噴淋頭主體100,不能滿足一定的使用週期,因此,需要在可再生材料層101形成後,專門對其進行初始再生操作。所述初始再生操作會將所有暴露出的可再生材料層101表面形成初始保護層102。 Although in practice, the shower head body 100 and the regenerable material layer 101 are installed in front of the MOCVD apparatus, it is possible that a surface of the regenerable material layer 101 may form a natural oxide layer due to oxidation of oxygen or the like in the air. The material of the oxide layer is the same as that of the initial protective layer 102 (when the initial protective layer 102 is formed by reacting oxygen with the recyclable material layer 101), but the thickness of the natural oxide layer is thin, which is insufficient for effectively protecting the spray. The head main body 100 cannot satisfy a certain period of use, and therefore, it is necessary to perform an initial regeneration operation after the recyclable material layer 101 is formed. The initial regeneration operation will form the initial protective layer 102 on the surface of all exposed layers of renewable material 101.

請參閱圖4,本發明提供的MOCVD設備的噴淋頭包括:噴淋頭主體100,其材質可以為不銹鋼或合金,本實施例中,噴淋頭主體的材質為型號為SS304的不銹鋼;可再生保護層,位於所述噴淋頭主體的外表,所述可再生保護層用於保護所述噴淋頭主體免於MOCVD過程中化學反應氣體和/或等離子體的刻蝕。 Referring to FIG. 4, the shower head of the MOCVD apparatus provided by the present invention comprises: a shower head main body 100, which may be made of stainless steel or an alloy. In this embodiment, the sprinkler body is made of stainless steel of the type SS304; A regenerative protective layer is located on the exterior of the showerhead body for protecting the showerhead body from etching of chemical reaction gases and/or plasma during MOCVD.

作為一個實施例,所述可再生保護層包括:可再生材料層101,位於所述噴淋頭主體100的表面;初始保護層102,位於所述可再生材料層101表面,所述初始保護層102與所述可再生材料層101構成所述可再生保護層。 As an embodiment, the reproducible protective layer comprises: a layer of renewable material 101 on the surface of the shower head body 100; an initial protective layer 102 on the surface of the layer of renewable material 101, the initial protective layer 102 and the renewable material layer 101 constitute the regenerable protective layer.

作為一個實施例,所述可再生材料層101的材質為 Y、Er、Rh、Ir等金屬材料中的一種或其中的組合,或者為所述可再生材料層101的材質可以為含有上述金屬材料的合金材料;或所述可再生材料層101的材質為Y2O3、Er2O3、YF3等化合物,或者所述可再生材料層101的材質可以為含有上述化合物的陶瓷材料;所述初始保護層102的材料為所述可再生材料層101與氧元素,氟元素或其它元素的結合。所述初始保護層102為對所述可再生材料層101進行初始再生操作形成,所述初始再生操作請參考所述MOCVD設備的噴淋頭的製作方法,在此不做贅述。所述可再生材料層101的厚度範圍為0.005~150毫米。所述初始保護層102的厚度範圍為0.001~30毫米。 As an embodiment, the material of the renewable material layer 101 is One or a combination of metal materials such as Y, Er, Rh, Ir, or the material of the renewable material layer 101 may be an alloy material containing the above metal material; or the material of the renewable material layer 101 is The material of the material such as Y2O3, Er2O3, YF3, or the material of the renewable material layer 101 may be a ceramic material containing the above compound; the material of the initial protective layer 102 is the layer of the renewable material 101 and oxygen, fluorine or A combination of other elements. The initial protective layer 102 is formed by performing an initial reproducing operation on the reproducible material layer 101. For the initial reproducing operation, refer to the manufacturing method of the shower head of the MOCVD device, which will not be described herein. The thickness of the regenerable material layer 101 ranges from 0.005 to 150 mm. The thickness of the initial protective layer 102 ranges from 0.001 to 30 mm.

雖然所述初始保護層102基本上與源物質、源物質之間由於化學反應形成的物質、化學等離子體清潔採用的酸性離子或鹼性離子基本上不發生化學反應,但是,由於MOCVD的設備工作環境惡劣(通常在800~1200攝氏度的高溫環境下加熱6~9小時),並且需要頻繁地使用酸性離子或鹼性離子還是會損所述初始保護層102,因此,初始保護層102在使用一段時間後,其厚度會減小,為了有效保護噴淋頭主體100,對所述噴淋頭表面的可再生材料層101進行迴圈再生,在所述可再生材料層表面形成迴圈保護層(圖中未示出)。 Although the initial protective layer 102 substantially does not chemically react with a substance formed by a chemical reaction between a source substance and a source substance, or an acidic ion or a basic ion used for chemical plasma cleaning, the device works due to MOCVD. The environment is bad (usually heated for 6 to 9 hours in a high temperature environment of 800 to 1200 degrees Celsius), and frequent use of acidic ions or alkaline ions may damage the initial protective layer 102, and therefore, the initial protective layer 102 is in use for a period of time. After the time, the thickness thereof is reduced. In order to effectively protect the shower head main body 100, the recyclable material layer 101 on the surface of the shower head is recirculated, and a loop protective layer is formed on the surface of the recyclable material layer ( Not shown in the figure).

作為一個實施例,所述迴圈再生包括:對所述可再生材料層101進行加熱,在加熱的同時通入再生氣體,所述再生氣體與所述可再生材料層101結合,形成迴圈保護層;或對所述可再生材料層101進行加熱,在加熱的同時使所述可再生材料層表面接觸再生等離子體,所述再生等離子體中的離子,原子以及氣 體分子與所述可再生材料層結合,形成迴圈保護層;或使所述可再生材料層表面接觸再生等離子體,所述再生等離子體中的離子,原子以及氣體分子與所述可再生材料層結合,形成迴圈保護層。根據噴淋頭的使用條件和使用時間的要求,可再生迴圈保護層的厚度可為0.001~0.2毫米或者更厚。 As an embodiment, the loop regeneration includes: heating the renewable material layer 101, and introducing a regeneration gas while heating, the regeneration gas is combined with the renewable material layer 101 to form loop protection. a layer; or heating the regenerable material layer 101 to bring the surface of the regenerable material layer into contact with a regenerative plasma while heating, ions, atoms and gas in the regenerated plasma a body molecule is combined with the layer of renewable material to form a loop protective layer; or the surface of the layer of renewable material is contacted with a regenerative plasma, ions, atoms and gas molecules in the regenerated plasma and the renewable material The layers are combined to form a loop protective layer. The thickness of the regenerable loop protective layer may be 0.001 to 0.2 mm or more depending on the conditions of use of the shower head and the time of use.

作為一個實施例,所述再生氣體應為可與再生材料表面反應並能形成保護層的氣體,例如包括但不局限於氧氣、氟氣中的一種或者兩者的組合;所述再生等離子體應為包含但不局限於氧離子、氟離子中的一種或兩者的結合,所述加熱溫度範圍為50~1200攝氏度,形成的迴圈保護層的厚度範圍為0.001~15毫米。 As an embodiment, the regeneration gas should be a gas that can react with the surface of the recycled material and can form a protective layer, such as, but not limited to, one of oxygen, fluorine gas, or a combination of both; The heating temperature ranges from 50 to 1200 degrees Celsius, including but not limited to one or a combination of oxygen ions and fluoride ions, and the thickness of the loop protective layer is 0.001 to 15 mm.

本發明所述的迴圈再生操作,也可以在所述初始保護層102沒有完全消耗完畢的時候進行,此時,所述迴圈操作是針對可再生材料層101和剩餘的初始保護層102同時進行,高溫下再生氣體能夠穿過初始保護層102向所述可再生材料層101擴散,等離子體中的離子或原子也可以穿過初始保護層102向所述可再生材料層101擴散。 The loop regeneration operation of the present invention may also be performed when the initial protective layer 102 is not completely consumed. At this time, the loop operation is for the regenerable material layer 101 and the remaining initial protective layer 102 simultaneously. It is carried out that the regeneration gas can diffuse through the initial protective layer 102 to the regenerable material layer 101 at a high temperature, and ions or atoms in the plasma can also diffuse through the initial protective layer 102 to the recyclable material layer 101.

所述迴圈再生操作也是可以重複進行的,即在對可再生材料層101進行迴圈再生操作後,其表面的迴圈保護層使用一段時間後,迴圈保護層的厚度會由於被化學清潔的酸性離子或鹼性離子損傷而減小,因此,可以在所述迴圈保護層消耗完畢之前,對所述可再生材料層101或所述可再生材料層101與迴圈保護層重新進行所述迴圈再生操作。 The loop regeneration operation can also be repeated, that is, after the loop regeneration operation is performed on the recyclable material layer 101, after the surface loop protection layer is used for a period of time, the thickness of the loop protection layer is chemically cleaned. Acid ions or alkaline ions are reduced by damage, and therefore, the recyclable material layer 101 or the recyclable material layer 101 and the loop protective layer can be re-executed before the loop protective layer is consumed. The loop regeneration operation is described.

需要說明的是,本發明所述的噴淋頭或初始保護層或迴圈保護層使用一段時間,與可再生保護層表面的初 始保護層102或迴圈保護層的使用週期對應。通常所述一段時間應小於等於所述使用週期。所述使用週期與所述初始保護層102或迴圈保護層的厚度有關係,所述初始保護層102或迴圈保護層的厚度越大,所述使用週期越長。 It should be noted that the shower head or the initial protective layer or the loop protection layer of the present invention is used for a period of time, and the surface of the reproducible protective layer is initially The period of use of the initial protective layer 102 or the loop protective layer corresponds. Typically the period of time should be less than or equal to the period of use. The period of use is related to the thickness of the initial protective layer 102 or the loop protection layer, and the larger the thickness of the initial protective layer 102 or the loop protection layer, the longer the use period.

綜合以上之敘述,通過在噴淋頭主體表面形成可再生保護層,所述可再生保護層用於保護噴淋頭主體,所述可再生保護層與噴淋頭主體、MOCVD工藝的源氣體、源氣體發生反應形成的物質、化學等離子體清潔方式的酸性離子或鹼性離子之間基本不會發生化學反應,由於形成有可再生保護層,從而可以採用化學方式清潔噴淋頭,防止噴淋頭表面堆積的物質影響外延層的品質,也可以防止利用機械方式清潔噴淋頭會降低MOCVD設備的利用率;由於所述可再生保護層基本不會與化學反應的酸性離子或鹼性離子發生反應,因此可再生保護層可以保護噴淋頭,提高噴淋頭的使用壽命,並且該可再生保護層可以迴圈使用,進一步提高了噴淋頭的使用壽命。 In summary, by forming a reproducible protective layer on the surface of the shower head body, the regenerable protective layer is used to protect the shower head body, the regenerative protective layer and the shower head body, the source gas of the MOCVD process, The substance formed by the reaction of the source gas, the acidic ion or the alkaline ion of the chemical plasma cleaning method does not substantially undergo a chemical reaction, and the regenerative protective layer is formed, so that the shower head can be chemically cleaned to prevent the spray. The substance deposited on the surface of the head affects the quality of the epitaxial layer, and it also prevents the mechanical cleaning of the shower head from reducing the utilization of the MOCVD equipment; since the regenerable protective layer does not substantially react with chemically reactive acidic or alkaline ions. The reaction, so the regenerative protective layer can protect the sprinkler, improve the service life of the sprinkler, and the recyclable protective layer can be used in a loop, further improving the service life of the sprinkler.

雖然本發明己以較佳實施例披露如上,但本發明並非限定於此。任何本領域技術人員,在不脫離本發明的精神和範圍內,均可作各種更動與修改,因此本發明的保護範圍應當以專利範圍所限定的範圍為准。 Although the invention has been disclosed above in the preferred embodiments, the invention is not limited thereto. Any changes and modifications may be made by those skilled in the art without departing from the spirit and scope of the invention, and the scope of the invention should be determined by the scope defined by the patent scope.

100‧‧‧噴淋頭主體 100‧‧‧Spray head body

101‧‧‧可再生材料層 101‧‧‧Renewable material layer

102‧‧‧初始保護層 102‧‧‧Initial protective layer

10‧‧‧噴淋頭 10‧‧‧Sprinkler

20‧‧‧加熱石墨基座 20‧‧‧heated graphite base

30‧‧‧晶圓 30‧‧‧ Wafer

40‧‧‧工藝腔室 40‧‧‧Process chamber

圖1是現有的MOCVD內部結構示意圖;圖2是本發明一個實施例的MOCVD設備的噴淋頭的製作方法流程示意圖;圖3~圖4是本發明一個實施例的MOCVD設備的噴淋頭的製作方法的剖面結構示意圖。 1 is a schematic view showing the internal structure of a conventional MOCVD apparatus; FIG. 2 is a flow chart showing a manufacturing method of a shower head of an MOCVD apparatus according to an embodiment of the present invention; and FIGS. 3 to 4 are schematic diagrams of a shower head of an MOCVD apparatus according to an embodiment of the present invention. Schematic diagram of the cross-sectional structure of the manufacturing method.

Claims (13)

一種MOCVD設備之噴淋頭的製作方法,其中包括:製作一噴淋頭主體;在所述該噴淋頭主體表面形成一可再生保護層,所述該可再生保護層用於保護所述噴淋頭主體免於MOCVD過程中化學反應氣體和/或等離子體的刻蝕。 A method for manufacturing a shower head of an MOCVD apparatus, comprising: fabricating a shower head body; forming a reproducible protective layer on a surface of the shower head body, the regenerable protective layer for protecting the spray The shower head body is free of etching of chemical reaction gases and/or plasma during MOCVD. 如申請專利範圍第1項所述的MOCVD設備之噴淋頭的製作方法,其中所述可再生保護層的製作方法包括:在所述噴淋頭表面形成一可再生材料層;所述該可再生材料層的厚度範圍為0.005~150毫米。 對所述該可再生材料層進行初始再生操作,形成一初始保護層,所述該初始保護層與所述該可再生材料層構成所述該可再生保護層,所述該初始保護層的厚度範圍為0.001~30毫米。 The method for fabricating a shower head of an MOCVD apparatus according to claim 1, wherein the method for fabricating the reproducible protective layer comprises: forming a layer of a reproducible material on a surface of the shower head; The thickness of the layer of recycled material ranges from 0.005 to 150 mm. Performing an initial regeneration operation on the recyclable material layer to form an initial protective layer, the initial protective layer and the recyclable material layer forming the reproducible protective layer, the thickness of the initial protective layer The range is 0.001~30 mm. 如申請專利範圍第2項所述的MOCVD設備之噴淋頭的製作方法,其中所述該可再生材料層的材質為合金材料或陶瓷材料,所述合金材料包括Y、Er、Rh、Ir中的一種或多種,所述陶瓷材料包括Y2O3、Er2O3、YF3中的一種或多種。 The method for manufacturing a shower head of an MOCVD apparatus according to claim 2, wherein the material of the recyclable material layer is an alloy material or a ceramic material, and the alloy material comprises Y, Er, Rh, and Ir. One or more of the ceramic materials include one or more of Y2O3, Er2O3, and YF3. 如申請專利範圍第2項所述的MOCVD設備之噴淋頭的製作方法,其中所述初始再生操作包括:對所述該可再生材料層進行加熱,在加熱的同時通入一再生氣體,所述該再生氣體與所述該可再生材料層結合,形成一初始保護層;或在對所述該可再生材料層進行所述加熱的同時在所述該可再生材料層表面通入一再生等離子體,所述該再生等離子體與所述該可再生材料層結合,形成初始保護層;或在所述該可再生材料層表面通入該再生等離子體,所述該再生等離子體與所述該 可再生材料層結合,形成一初始保護層。 The method of fabricating a shower head of an MOCVD apparatus according to claim 2, wherein the initial regeneration operation comprises: heating the layer of the recyclable material, and introducing a regeneration gas while heating, Said regeneration gas is combined with said layer of renewable material to form an initial protective layer; or a regenerative plasma is introduced into said surface of said renewable material layer while said heating of said layer of renewable material is performed The regenerative plasma is combined with the layer of recyclable material to form an initial protective layer; or the regenerated plasma is introduced into the surface of the regenerable material layer, the regenerated plasma and the The layers of renewable material combine to form an initial protective layer. 如申請專利範圍第4項所述的MOCVD設備之噴淋頭的製作方法,其中所述再生氣體為氧氣、氟氣中的一種或者兩者的組合;所述再生等離子為氧離子、氟離子中的一種或兩者的結合,所述加熱溫度範圍為50~1200攝氏度。 The method for fabricating a shower head of an MOCVD apparatus according to claim 4, wherein the regeneration gas is one of oxygen or fluorine gas or a combination of both; and the regeneration plasma is oxygen ion or fluoride ion. One or a combination of the two, the heating temperature ranges from 50 to 1200 degrees Celsius. 如申請專利範圍第1項所述的MOCVD設備之噴淋頭的製作方法,其中所述該可再生材料層通過利用焊接、電鍍、軋製、滾壓、濺射或沉積工藝製作,使所述該再生材料層與該噴淋頭主體組合在一起。 The method of fabricating a shower head of an MOCVD apparatus according to claim 1, wherein the layer of the recyclable material is produced by using a welding, electroplating, rolling, rolling, sputtering or deposition process, The layer of recycled material is combined with the showerhead body. 一種MOCVD設備之噴淋頭,其中包括:一噴淋頭主體;以及一可再生保護層,位於所述該噴淋頭主體的外表,所述該可再生保護層用於保護所述該噴淋頭主體免於MOCVD過程中化學反應氣體和/或等離子體的刻蝕。 A shower head of an MOCVD apparatus, comprising: a shower head body; and a regenerable protective layer on an outer surface of the shower head body, the regenerable protective layer for protecting the shower The head body is free of etching of chemical reaction gases and/or plasma during MOCVD. 如申請專利範圍第7項所述的MOCVD設備之噴淋頭,其中所述可再生保護層包括:一可再生材料層,位於所述該噴淋頭主體的表面;所述該可再生材料層的厚度可為0.005~150毫米;一初始保護層,位於所述該可再生材料層表面,所述該初始保護層與所述該可再生材料層構成所述該可再生保護層;所述該初始保護層的厚度可為0.001~30毫米。 The shower head of the MOCVD apparatus according to claim 7, wherein the reproducible protective layer comprises: a layer of a reproducible material on a surface of the shower head body; the recyclable material layer The thickness may be from 0.005 to 150 mm; an initial protective layer is located on the surface of the layer of recyclable material, and the initial protective layer and the layer of recyclable material constitute the reproducible protective layer; The initial protective layer may have a thickness of 0.001 to 30 mm. 如申請專利範圍第8項所述的MOCVD設備之噴淋頭,其中所述可再生材料層的材質為合金材料或陶瓷材料,所述合金材料包括Y、Er、Rh、Ir中的一種或多種,所述陶瓷材料包括Y2O3、Er2O3、YF3中的一種或多種;所述該初始保護層的材料為所述該可再生材料層與氧元素和/或氟元素的結合。 The shower head of the MOCVD apparatus according to claim 8, wherein the material of the renewable material layer is an alloy material or a ceramic material, and the alloy material comprises one or more of Y, Er, Rh, and Ir. The ceramic material includes one or more of Y2O3, Er2O3, and YF3; the material of the initial protective layer is a combination of the renewable material layer and an oxygen element and/or a fluorine element. 一種如申請專利範圍第2項的方法製作的MOCVD設備之噴淋頭的使用方法,其中在所述噴淋頭使用一段時間後,對所述該可再生材料層進行迴圈再生,在所述該可再生材料層表面形成一迴圈保護層;所述該迴圈保護層的厚度範圍為0.001~15毫米。 A method of using a shower head of an MOCVD apparatus manufactured by the method of claim 2, wherein after the shower head is used for a period of time, the recyclable material layer is subjected to loop regeneration, The surface of the layer of recyclable material forms a loop protection layer; the thickness of the loop protection layer ranges from 0.001 to 15 mm. 如申請專利範圍第10項所述的使用方法,其中所述迴圈再生包括:對所述該可再生材料層進行加熱,在加熱的同時通入一再生氣體,所述該再生氣體與所述該可再生材料層結合,形成該迴圈保護層;或在對所述該可再生材料層進行所述加熱的同時在所述該可再生材料層表面通入一再生等離子體,所述該再生等離子體與所述該可再生材料層結合,形成該迴圈保護層;或在所述該可再生材料層表面通入該再生等離子體,所述該再生等離子體與所述可再生材料層結合,形成該迴圈保護層。 The method of use according to claim 10, wherein the loop regeneration comprises: heating the layer of the recyclable material, and introducing a regeneration gas while heating, the regeneration gas and the The layer of recyclable material is combined to form the loop protection layer; or a regenerative plasma is introduced into the surface of the recyclable material layer while the heating of the layer of recyclable material is performed, the regeneration Plasma is combined with the layer of recyclable material to form the loop protective layer; or the regenerated plasma is passed through the surface of the regenerable material layer, the regenerative plasma being combined with the layer of recyclable material Forming the loop protection layer. 如申請專利範圍第11項所述的使用方法,其中所述再生氣體為氧氣、氟氣中的一種或者兩者的組合;所述再生等離子體為氧離子、氟離子中的一種或兩者的結合,所述加熱溫度範圍為50~1200攝氏度。 The method of use according to claim 11, wherein the regeneration gas is one of oxygen or fluorine gas or a combination of both; the regeneration plasma is one or both of oxygen ions and fluoride ions. In combination, the heating temperature ranges from 50 to 1200 degrees Celsius. 如申請專利範圍第12項所述的使用方法,其中所述一段時間小於等於所述可再生保護層表面的初始保護層或迴圈保護層的使用週期。 The method of use of claim 12, wherein the period of time is less than or equal to a period of use of the initial protective layer or the loop protective layer of the surface of the regenerable protective layer.
TW101127579A 2011-08-05 2012-07-31 Showerhead for MOCVD apparatus and method of using and manufacturing the same TW201326457A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201110224912 CN102268656B (en) 2011-08-05 2011-08-05 Sprinkler of metal organic chemical vapor deposition (MOCVD) equipment as well as manufacture method and use method thereof

Publications (2)

Publication Number Publication Date
TW201326457A true TW201326457A (en) 2013-07-01
TWI494465B TWI494465B (en) 2015-08-01

Family

ID=45051105

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101127579A TW201326457A (en) 2011-08-05 2012-07-31 Showerhead for MOCVD apparatus and method of using and manufacturing the same

Country Status (2)

Country Link
CN (1) CN102268656B (en)
TW (1) TW201326457A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103177912B (en) * 2011-12-20 2016-05-25 中微半导体设备(上海)有限公司 A kind of cascade type assembly and manufacture method thereof for plasma reaction chamber
CN103132139A (en) * 2013-03-07 2013-06-05 光达光电设备科技(嘉兴)有限公司 Epitaxial deposition equipment, spray header and manufacturing method of spray header
CN104715993B (en) * 2013-12-13 2017-02-22 中微半导体设备(上海)有限公司 Plasma processing cavity, gas spraying head and manufacturing method thereof
CN105986245A (en) * 2015-02-16 2016-10-05 中微半导体设备(上海)有限公司 Part and method for improving MOCVD reaction process

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002241971A (en) * 2001-02-14 2002-08-28 Toshiba Ceramics Co Ltd Plasma resistant member
US20080264564A1 (en) * 2007-04-27 2008-10-30 Applied Materials, Inc. Method of reducing the erosion rate of semiconductor processing apparatus exposed to halogen-containing plasmas
KR101344990B1 (en) * 2006-04-20 2013-12-24 신에쓰 가가꾸 고교 가부시끼가이샤 Conductive, plasma-resistant member
US7696117B2 (en) * 2007-04-27 2010-04-13 Applied Materials, Inc. Method and apparatus which reduce the erosion rate of surfaces exposed to halogen-containing plasmas

Also Published As

Publication number Publication date
CN102268656B (en) 2013-05-01
TWI494465B (en) 2015-08-01
CN102268656A (en) 2011-12-07

Similar Documents

Publication Publication Date Title
US6635569B1 (en) Method of passivating and stabilizing a Ti-PECVD process chamber and combined Ti-PECVD/TiN-CVD processing method and apparatus
TW201326457A (en) Showerhead for MOCVD apparatus and method of using and manufacturing the same
JP2007177320A (en) METHOD OF WASHING THIN FILM DEPOSITION UNIT FOR DEPOSITING Al-CONTAINING METAL FILM AND Al-CONTAINING METAL NITRIDE FILM
JP2017098543A (en) Method of manufacturing semiconductor device
US20040180553A1 (en) Method of depositing ALD thin films on wafer
CN111593327B (en) MOCVD equipment cleaning method
EP1154036A1 (en) Gas reactions to eliminate contaminates in a CVD chamber
TW201312686A (en) Anti-etching layer, semiconductor processing device and manufacturing method thereof
TW201346059A (en) Cleaning method for MOCVD equipment
TW201316401A (en) Anti-etching layer, semiconductor processing device and its fabrication method
JP2002167673A (en) Cvd film deposition method and method for removing deposition
JP5087653B2 (en) Semiconductor device manufacturing method, cleaning method, and substrate processing apparatus
JP7409322B2 (en) Deposit removal method and film formation method
KR101416172B1 (en) Cleaning method for chamber of thin film deposition apparatus
CN102766851B (en) Metal organic chemical vapor deposition reactor
JP2010147201A (en) Substrate processing device
JP4700236B2 (en) Semiconductor device manufacturing method and substrate processing apparatus
EP1154037A1 (en) Methods for improving chemical vapor deposition processing
US20090159005A1 (en) Coatings for semiconductor processing equipment
EP1154038A1 (en) Method of conditioning a chamber for chemical vapor deposition
CN102766852B (en) MOCVD reactor
JP5370209B2 (en) Manufacturing method of silicon epitaxial wafer
JP5495449B2 (en) Cleaning method, semiconductor device manufacturing method, and substrate processing apparatus
JP3804110B2 (en) Silicon film forming method using vapor phase growth apparatus
JP2891991B1 (en) Plasma CVD equipment