TW201547215A - Radio frequency transmitting device and radio frequency receiving device - Google Patents

Radio frequency transmitting device and radio frequency receiving device Download PDF

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Publication number
TW201547215A
TW201547215A TW103119224A TW103119224A TW201547215A TW 201547215 A TW201547215 A TW 201547215A TW 103119224 A TW103119224 A TW 103119224A TW 103119224 A TW103119224 A TW 103119224A TW 201547215 A TW201547215 A TW 201547215A
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Taiwan
Prior art keywords
electrically coupled
signal
circuit
radio frequency
frequency
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TW103119224A
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Chinese (zh)
Inventor
Jri Lee
Pen-Jui Peng
Pang-Ning Chen
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Univ Nat Taiwan
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Priority to TW103119224A priority Critical patent/TW201547215A/en
Priority to US14/322,886 priority patent/US9154167B1/en
Publication of TW201547215A publication Critical patent/TW201547215A/en

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Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45076Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/601Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators using FET's, e.g. GaAs FET's
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/68Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02Transmitters
    • H04B1/04Circuits
    • H04B1/0483Transmitters with multiple parallel paths
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06Receivers
    • H04B1/16Circuits
    • H04B1/26Circuits for superheterodyne receivers
    • H04B1/28Circuits for superheterodyne receivers the receiver comprising at least one semiconductor device having three or more electrodes
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/423Amplifier output adaptation especially for transmission line coupling purposes, e.g. impedance adaptation
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/451Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45394Indexing scheme relating to differential amplifiers the AAC of the dif amp comprising FETs whose sources are not coupled, i.e. the AAC being a pseudo-differential amplifier

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Amplifiers (AREA)
  • Transmitters (AREA)

Abstract

A radio frequency transmitting device includes a frequency multiplier circuit, a mixer circuit, a power splitter, a plurality of phase shifting circuits, a plurality of amplifiers, and a plurality of antennas. The frequency multiplier circuit is configured to amplify a fundamental signal to generate a harmonic signal. The mixer circuit is configured to generate a RF signal based on an input signal and the harmonic signal. The power splitter is configured to generate a plurality of sub-RF signals. The phase shifting circuits are configured to shift the phase of the sub-RF signals. The amplifiers are configured to amplify the power of the sub-RF signals. The antennas are configured to transmit the sub-RF signals. Furthermore, a radio frequency receiving device is also disclosed herein.

Description

射頻傳送裝置及射頻接收裝置 RF transmission device and radio frequency receiving device

本發明係有關於一種無線通信技術,且特別是有關於一種射頻傳送裝置及射頻接收裝置。 The present invention relates to a wireless communication technology, and more particularly to a radio frequency transmission device and a radio frequency receiving device.

隨著科技的進展,電子元件間的傳輸方式,逐漸由有線的傳輸方式(例如:透過通用串列匯流排(Universal Serial Bus,USB)來傳輸等)轉變為無線的傳輸方式,如此,當可改善有線之傳輸方式所存在的諸多不便。 With the advancement of technology, the transmission method between electronic components has gradually changed from a wired transmission method (for example, transmission through a Universal Serial Bus (USB)) to a wireless transmission method. There are many inconveniences in improving the way cable is transmitted.

然而,無線的傳輸方式仍存在許多問題,諸如射頻傳輸裝置所傳送之信號的線性度問題、AM/AM失真(AM to AM distortion)問題等,此外,在射頻傳輸裝置之可變增益放大電路中,所採用之偏壓調整(bias tuning)或電流操控(current steering)方式亦分別存在匹配及線性度的問題。 However, there are still many problems in the wireless transmission mode, such as the linearity of the signal transmitted by the RF transmission device, the AM to AM distortion problem, and the like, in addition, in the variable gain amplifier circuit of the RF transmission device. There are also problems of matching and linearity in the bias tuning or current steering methods.

由此可見,上述現有的方式,顯然仍存在不便與缺陷,而有待改進。為了解決上述問題,相關領域莫不費盡 心思來謀求解決之道,但長久以來仍未發展出適當的解決方案。 It can be seen that the above existing methods obviously have inconveniences and defects, and need to be improved. In order to solve the above problems, the related fields are not exhausted. The mind is trying to find a solution, but it has not developed a suitable solution for a long time.

發明內容旨在提供本揭示內容的簡化摘要,以使閱讀者對本揭示內容具備基本的理解。此發明內容並非本揭示內容的完整概述,且其用意並非在指出本發明實施例的重要/關鍵元件或界定本發明的範圍。 SUMMARY OF THE INVENTION The Summary of the Disclosure is intended to provide a basic understanding of the present disclosure. This Summary is not an extensive overview of the disclosure, and is not intended to be an

本發明內容之一技術態樣係關於一種射頻傳送裝置,其包含倍頻電路、混頻電路、功率分配電路、複數個相位偏移電路、複數個放大電路及複數個天線。倍頻電路用以放大基頻信號之頻率以產生諧波信號。混頻電路電性耦接於倍頻電路,並用以依據輸入信號與諧波信號以產生射頻信號。功率分配電路電性耦接於混頻電路,並用以依據射頻信號以產生複數個子射頻信號,功率分配電路包含第一放大器、複數個第二放大器及複數個第三放大器。該等第二放大器並聯於共用節點及電源之間,其中共用節點電性耦接於第一放大器,該等第三放大器分別電性耦接於該等第二放大器。該等相位偏移電路分別對該等子射頻信號進行相位偏移。該等放大電路分別放大該等子射頻信號之功率,該等放大電路的每一者包含輸入級、複數個第四放大器、功率偵測器及電壓箝位器,輸入級用以接收子射頻信號。第一耦合器電性耦接於輸入級。該等第四放大器 彼此串接並電性耦接於第一耦合器,其中第一耦合器用以耦合部分子射頻信號之功率至該等第四放大器,該等第四放大器根據偏壓以放大子射頻信號之功率。功率偵測器電性耦接於第一耦合器,其中第一耦合器用以耦合部分子射頻信號之功率至功率偵測器,功率偵測器用以偵測子射頻信號以輸出偵測信號。電壓箝位器電性耦接於功率偵測器,並用以根據偵測信號以控制偏壓。該等天線用以傳送該等子射頻信號。 One aspect of the present invention relates to a radio frequency transmission device including a frequency multiplying circuit, a mixing circuit, a power distribution circuit, a plurality of phase shift circuits, a plurality of amplifying circuits, and a plurality of antennas. The frequency multiplying circuit is used to amplify the frequency of the fundamental frequency signal to generate a harmonic signal. The mixing circuit is electrically coupled to the frequency multiplying circuit and configured to generate the radio frequency signal according to the input signal and the harmonic signal. The power distribution circuit is electrically coupled to the mixing circuit and configured to generate a plurality of sub-RF signals according to the RF signal. The power distribution circuit includes a first amplifier, a plurality of second amplifiers, and a plurality of third amplifiers. The second amplifier is connected in parallel between the common node and the power source, wherein the common node is electrically coupled to the first amplifier, and the third amplifiers are electrically coupled to the second amplifiers. The phase offset circuits respectively phase shift the sub-radio signals. The amplifying circuits respectively amplify the power of the sub-radio signals, each of the amplifying circuits comprising an input stage, a plurality of fourth amplifiers, a power detector and a voltage clamp, and the input stage is configured to receive the sub-RF signals . The first coupler is electrically coupled to the input stage. The fourth amplifier The first coupler is coupled to the first coupler, wherein the first coupler is configured to couple the power of the partial sub-RF signal to the fourth amplifiers, and the fourth amplifiers are based on the bias voltage to amplify the power of the sub-radio signal. The power detector is electrically coupled to the first coupler, wherein the first coupler is configured to couple the power of the partial sub-RF signal to the power detector, and the power detector is configured to detect the sub-RF signal to output the detection signal. The voltage clamp is electrically coupled to the power detector and configured to control the bias voltage according to the detection signal. The antennas are used to transmit the sub-radio signals.

本發明內容之另一技術態樣係關於一種射頻接收裝置,其包含複數個天線、複數個可變增益低雜訊放大電路、複數個相位偏移電路、倍頻電路以及混頻電路。該等天線用以接收複數個射頻信號。該等可變增益低雜訊放大電路電性耦接於該等天線,用以放大該等射頻信號。,該等可變增益低雜訊放大電路的每一者包含輸入級及複數個可變增益放大器。輸入級用以濾除該等射頻信號之雜訊。該等可變增益放大器彼此串接,並電性耦接於輸入級。該等可變增益放大器的每一者包含放大單元及下拉單元。放大單元用以放大該等射頻信號之功率。下拉單元,電性耦接於放大單元,並用以根據控制信號以將放大單元接地。該等相位偏移電路分別電性耦接於該等可變增益低雜訊放大電路,並用以對該等射頻信號進行相位偏移。倍頻電路用以放大基頻信號之頻率以產生諧波信號。混頻電路電性耦接於該等相位偏移電路及倍頻電路,並用以依據該等射 頻信號與諧波信號以產生輸出信號。 Another aspect of the present disclosure relates to a radio frequency receiving apparatus including a plurality of antennas, a plurality of variable gain low noise amplifying circuits, a plurality of phase shift circuits, a frequency multiplying circuit, and a mixing circuit. The antennas are configured to receive a plurality of radio frequency signals. The variable gain low noise amplifier circuits are electrically coupled to the antennas for amplifying the RF signals. Each of the variable gain low noise amplifying circuits includes an input stage and a plurality of variable gain amplifiers. The input stage is used to filter out noise of the RF signals. The variable gain amplifiers are connected in series with each other and electrically coupled to the input stage. Each of the variable gain amplifiers includes an amplification unit and a pull down unit. The amplifying unit is configured to amplify the power of the radio frequency signals. The pull-down unit is electrically coupled to the amplifying unit and configured to ground the amplifying unit according to the control signal. The phase shifting circuits are electrically coupled to the variable gain low noise amplifying circuits, and are used for phase shifting the radio frequency signals. The frequency multiplying circuit is used to amplify the frequency of the fundamental frequency signal to generate a harmonic signal. The mixing circuit is electrically coupled to the phase shifting circuit and the frequency multiplying circuit, and is configured to be based on the equalizing The frequency signal and the harmonic signal are used to generate an output signal.

因此,根據本發明之技術內容,本發明實施例藉由提供一種射頻傳送裝置及射頻接收裝置,藉以改善無線傳輸裝置所傳送之信號的線性度問題、AM/AM失真問題。此外,本發明之射頻接收裝置亦可改善採用偏壓調整或電流操控之可變增益放大電路中,所存在匹配及線性度的問題。 Therefore, according to the technical content of the present invention, an embodiment of the present invention provides a radio frequency transmission device and a radio frequency receiving device, thereby improving linearity problems and AM/AM distortion problems of signals transmitted by the wireless transmission device. In addition, the radio frequency receiving device of the present invention can also improve the problem of matching and linearity in the variable gain amplifying circuit using bias adjustment or current steering.

在參閱下文實施方式後,本發明所屬技術領域中具有通常知識者當可輕易瞭解本發明之基本精神及其他發明目的,以及本發明所採用之技術手段與實施態樣。 The basic spirit and other objects of the present invention, as well as the technical means and implementations of the present invention, will be readily apparent to those skilled in the art of the invention.

100‧‧‧射頻傳送裝置 100‧‧‧RF transmitter

110‧‧‧倍頻電路 110‧‧‧Multiplier circuit

120‧‧‧混頻電路 120‧‧‧mixing circuit

130‧‧‧功率分配電路 130‧‧‧Power distribution circuit

142、144、146、148‧‧‧相位偏移電路 142, 144, 146, 148‧‧‧ phase offset circuit

152、154、156、158‧‧‧放大電路 152, 154, 156, 158‧‧‧ amplifying circuit

162、164、166、168‧‧‧天線 162, 164, 166, 168‧‧ antenna

200‧‧‧射頻接收裝置 200‧‧‧RF receiver

212、214、216、218‧‧‧天線 212, 214, 216, 218‧‧‧ antenna

222、224、226、228‧‧‧放大電路 222, 224, 226, 228‧‧‧ amplifying circuit

232、234、236、238‧‧‧相位偏移電路 232, 234, 236, 238‧‧‧ phase offset circuit

240‧‧‧混頻電路 240‧‧‧mixing circuit

250‧‧‧倍頻電路 250‧‧‧Multiplier circuit

610‧‧‧向量產生器 610‧‧‧Vector Generator

620‧‧‧相位選擇器 620‧‧‧ phase selector

630‧‧‧邏輯運算器 630‧‧‧Logical Operator

640‧‧‧數位類比轉換器 640‧‧‧Digital Analog Converter

650‧‧‧巴輪轉換器 650‧‧‧Bar Wheel Converter

660‧‧‧匹配器 660‧‧‧matcher

670‧‧‧放大器 670‧‧‧Amplifier

710‧‧‧數位類比轉換器 710‧‧‧Digital Analog Converter

910‧‧‧向量產生器 910‧‧‧Vector Generator

920‧‧‧相位選擇器 920‧‧‧ phase selector

930‧‧‧粗調數位類比轉換器 930‧‧‧ coarse-tuning digital analog converter

940‧‧‧相位選擇器 940‧‧‧ phase selector

950‧‧‧細調數位類比轉換器 950‧‧‧ fine-tuning digital analog converter

960‧‧‧邏輯編碼器 960‧‧‧Logical Encoder

1110‧‧‧輸入級 1110‧‧‧Input level

1120‧‧‧耦合電路 1120‧‧‧Coupling circuit

1130‧‧‧匹配器 1130‧‧‧matcher

1140‧‧‧功率偵測器 1140‧‧‧Power Detector

1150‧‧‧匹配器 1150‧‧‧matcher

1160‧‧‧放大器 1160‧‧Amplifier

1310‧‧‧匹配電路 1310‧‧‧Matching circuit

1320‧‧‧匹配電路 1320‧‧‧Matching circuit

為讓本發明之上述和其他目的、特徵、優點與實施例能更明顯易懂,所附圖式之說明如下:第1圖係繪示依照本發明一實施例的一種射頻收發系統之示意圖。 The above and other objects, features, advantages and embodiments of the present invention will become more <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt;

第2圖係依照本發明一實施例繪示如第1圖所示之射頻傳送裝置的一種倍頻電路之示意圖。 2 is a schematic diagram showing a frequency multiplying circuit of the radio frequency transmitting apparatus shown in FIG. 1 according to an embodiment of the invention.

第3A圖係依照本發明一實施例繪示如第2圖所示之倍頻電路的一種實驗數據示意圖。 FIG. 3A is a schematic diagram showing experimental data of a frequency multiplying circuit as shown in FIG. 2 according to an embodiment of the invention.

第3B圖係依照本發明一實施例繪示如第2圖所示之倍頻電路的一種實驗數據示意圖。 FIG. 3B is a schematic diagram showing experimental data of the frequency multiplying circuit shown in FIG. 2 according to an embodiment of the invention.

第4圖係依照本發明一實施例繪示如第1圖所示之射頻傳送裝置的一種功率分配電路的示意圖。 4 is a schematic diagram showing a power distribution circuit of the radio frequency transmission device shown in FIG. 1 according to an embodiment of the invention.

第5A圖係依照本發明一實施例繪示如第4圖所示之功率分配電路的一種增益及相位誤差的示意圖。 FIG. 5A is a schematic diagram showing a gain and phase error of the power distribution circuit shown in FIG. 4 according to an embodiment of the invention.

第5B圖係依照本發明一實施例繪示如第4圖所示之功率分配電路的一種小訊號量測結果示意圖。 FIG. 5B is a schematic diagram showing a small signal measurement result of the power distribution circuit shown in FIG. 4 according to an embodiment of the invention.

第6圖係依照本發明一實施例繪示如第1圖所示之射頻傳送裝置的一種相位偏移電路的示意圖。 FIG. 6 is a schematic diagram showing a phase shift circuit of the radio frequency transmitting apparatus shown in FIG. 1 according to an embodiment of the invention.

第7圖係依照本發明一實施例繪示如第6圖所示之相位偏移電路的一種實驗數據的示意圖。 Figure 7 is a schematic diagram showing an experimental data of a phase shift circuit as shown in Figure 6 in accordance with an embodiment of the present invention.

第8圖係依照本發明一實施例繪示如第1圖所示之射頻傳送裝置的一種放大電路的示意圖。 FIG. 8 is a schematic diagram showing an amplifying circuit of the radio frequency transmitting apparatus shown in FIG. 1 according to an embodiment of the invention.

第9A圖係依照本發明一實施例繪示如第8圖所示之放大電路的一種實驗數據的示意圖。 FIG. 9A is a schematic diagram showing an experimental data of an amplifying circuit as shown in FIG. 8 according to an embodiment of the invention.

第9B圖係依照本發明一實施例繪示如第8圖所示之放大電路的一種實驗數據的示意圖。 FIG. 9B is a schematic diagram showing an experimental data of an amplifying circuit as shown in FIG. 8 according to an embodiment of the invention.

第9C圖係依照本發明一實施例繪示如第8圖所示之放大電路的一種實驗數據的示意圖。 FIG. 9C is a schematic diagram showing an experimental data of an amplifying circuit as shown in FIG. 8 according to an embodiment of the invention.

第10圖係依照本發明一實施例繪示如第1圖所示之射頻接收裝置的一種可變增益低雜訊放大電路的示意圖。 FIG. 10 is a schematic diagram showing a variable gain low noise amplifying circuit of the radio frequency receiving apparatus shown in FIG. 1 according to an embodiment of the invention.

第11A圖係依照本發明一實施例繪示如第10圖所示之可變增益低雜訊放大電路的一種實驗數據的示意圖。 11A is a schematic diagram showing experimental data of a variable gain low noise amplifying circuit as shown in FIG. 10 according to an embodiment of the invention.

第11B圖係依照本發明一實施例繪示如第10圖所示之可變增益低雜訊放大電路的一種實驗數據的示意圖。 FIG. 11B is a schematic diagram showing experimental data of a variable gain low noise amplifying circuit as shown in FIG. 10 according to an embodiment of the invention.

根據慣常的作業方式,圖中各種特徵與元件並未依比 例繪製,其繪製方式是為了以最佳的方式呈現與本發明相關的具體特徵與元件。此外,在不同圖式間,以相同或相似的元件符號來指稱相似的元件/部件。 According to the usual way of operation, the various features and components in the figure are not in accordance with The drawings are drawn to illustrate the specific features and elements associated with the present invention in an optimal manner. In addition, similar elements/components are referred to by the same or similar element symbols throughout the different drawings.

為了使本揭示內容的敘述更加詳盡與完備,下文針對了本發明的實施態樣與具體實施例提出了說明性的描述;但這並非實施或運用本發明具體實施例的唯一形式。實施方式中涵蓋了多個具體實施例的特徵以及用以建構與操作這些具體實施例的方法步驟與其順序。然而,亦可利用其他具體實施例來達成相同或均等的功能與步驟順序。 The description of the embodiments of the present invention is intended to be illustrative and not restrictive. The features of various specific embodiments, as well as the method steps and sequences thereof, are constructed and manipulated in the embodiments. However, other specific embodiments may be utilized to achieve the same or equivalent function and sequence of steps.

除非本說明書另有定義,此處所用的科學與技術詞彙之含義與本發明所屬技術領域中具有通常知識者所理解與慣用的意義相同。此外,在不和上下文衝突的情形下,本說明書所用的單數名詞涵蓋該名詞的複數型;而所用的複數名詞時亦涵蓋該名詞的單數型。 The scientific and technical terms used herein have the same meaning as commonly understood by those of ordinary skill in the art to which the invention pertains, unless otherwise defined herein. In addition, the singular noun used in this specification covers the plural of the noun in the case of no conflict with the context; the plural noun of the noun is also included in the plural noun used.

另外,關於本文中所使用之「耦接」或「連接」,均可指二或多個元件相互直接作實體或電性接觸,或是相互間接作實體或電性接觸,亦可指二或多個元件相互操作或動作。 In addition, the term "coupled" or "connected" as used herein may mean that two or more elements are in direct physical or electrical contact with each other, or indirectly in physical or electrical contact with each other, or Multiple components operate or act upon each other.

第1圖係依照本發明一實施例繪示一種射頻收發系統的示意圖。如圖所示,射頻收發系統包含射頻傳送裝置100及射頻接收裝置200,其中射頻傳送裝置100包含倍 頻電路110、混頻電路120、功率分配電路130、複數個相位偏移電路142~148、複數個放大電路152~158以及複數個天線162~168,而射頻接收裝置200包含複數個天線212~218、複數個可變增益低雜訊放大電路222~228、複數個相位偏移電路232~238、混頻電路240以及倍頻電路250。在一實施例中,第1圖所示之射頻收發系統可用以傳送及接收毫米波(millimeter wave),據此,射頻收發系統可稱為毫米波相位陣列收發機。 FIG. 1 is a schematic diagram of a radio frequency transceiver system according to an embodiment of the invention. As shown, the radio frequency transceiver system includes a radio frequency transmitting device 100 and a radio frequency receiving device 200, wherein the radio frequency transmitting device 100 includes multiple times The frequency circuit 110, the mixing circuit 120, the power distribution circuit 130, the plurality of phase shift circuits 142-148, the plurality of amplifier circuits 152-158 and the plurality of antennas 162-168, and the RF receiving device 200 includes a plurality of antennas 212~ 218. A plurality of variable gain low noise amplifying circuits 222-228, a plurality of phase shift circuits 232-238, a mixing circuit 240, and a frequency multiplying circuit 250. In one embodiment, the radio frequency transceiver system shown in FIG. 1 can be used to transmit and receive millimeter waves, whereby the radio frequency transceiver system can be referred to as a millimeter wave phase array transceiver.

請參照射頻傳送裝置100,倍頻電路110用以放大基頻信號(例如:本地振盪信號L0)之頻率而產生諧波信號。混頻電路120電性耦接於倍頻電路110,並用以依據輸入信號(例如:中頻信號IF)與諧波信號而產生射頻信號。功率分配電路130電性耦接於混頻電路120,並用以依據射頻信號產生複數個子射頻信號。該等相位偏移電路142~148電性耦接於功率分配電路130,並分別對該等子射頻信號進行相位偏移。該等放大電路152~158分別電性耦接於該等相位偏移電路142~148,並分別放大該等子射頻信號以產生複數個射頻信號。該等天線162~168分別電性耦接於該等該等放大電路152~158,並分別用以傳送該等射頻信號。 Referring to the RF transmission device 100, the frequency multiplying circuit 110 is configured to amplify a frequency of a baseband signal (for example, a local oscillation signal L0) to generate a harmonic signal. The mixing circuit 120 is electrically coupled to the frequency multiplying circuit 110 and configured to generate a radio frequency signal according to an input signal (eg, an intermediate frequency signal IF) and a harmonic signal. The power distribution circuit 130 is electrically coupled to the mixing circuit 120 and configured to generate a plurality of sub-RF signals according to the RF signal. The phase shift circuits 142-148 are electrically coupled to the power distribution circuit 130 and phase-shift the sub-RF signals. The amplifying circuits 152-158 are electrically coupled to the phase shifting circuits 142-148, respectively, and respectively amplify the sub-radio signals to generate a plurality of radio frequency signals. The antennas 162-168 are electrically coupled to the amplifying circuits 152-158, respectively, for transmitting the radio frequency signals.

請參閱射頻接收裝置200,該等天線212~218用以接收由射頻傳送裝置100所傳輸而來的該等射頻信號。該等可變增益低雜訊放大電路222~228分別電性耦接於該等天線212~218,並分別用以放大該等射頻信號。該等相位偏 移電路232~238分別電性耦接於該等可變增益低雜訊放大電路222~228,並分別用以對該等射頻信號進行相位偏移。另一方面,倍頻電路250用以放大基頻信號(例如:本地振盪信號L0)之頻率以產生諧波信號。此外,混頻電路240電性耦接於該等相位偏移電路232~238及倍頻電路250,並用以依據該等射頻信號與諧波信號以產生輸出信號(例如:中頻信號IF)。 Please refer to the RF receiving device 200. The antennas 212-218 are configured to receive the RF signals transmitted by the RF transmitting device 100. The variable gain low noise amplifier circuits 222-228 are electrically coupled to the antennas 212-218, respectively, for amplifying the RF signals. Phase shift The shifting circuits 232-238 are electrically coupled to the variable gain low noise amplifying circuits 222-228, respectively, and are respectively used for phase shifting the RF signals. On the other hand, the frequency multiplying circuit 250 is for amplifying the frequency of the fundamental frequency signal (for example, the local oscillation signal L0) to generate a harmonic signal. In addition, the mixing circuit 240 is electrically coupled to the phase shifting circuits 232-238 and the frequency multiplying circuit 250, and is configured to generate an output signal (eg, an intermediate frequency signal IF) according to the radio frequency signals and the harmonic signals.

第2圖係依照本發明一實施例繪示如第1圖所示之射頻傳送裝置100的一種倍頻電路110、250的示意圖。一般射頻傳送裝置內的94GHz倍頻器(諸如三倍頻器)必須提供較大之輸出振幅及較廣之操作範圍,為達到上數目的,一般作法係採用電容陣列或變容器以提升倍頻器之共振頻率。然而,此種作法將嚴重限制倍頻器之輸出振幅。 2 is a schematic diagram showing a frequency multiplying circuit 110, 250 of the radio frequency transmitting device 100 shown in FIG. 1 according to an embodiment of the invention. A 94 GHz frequency multiplier (such as a tripler) in a general RF transmission device must provide a large output amplitude and a wide operating range. To achieve the above number, a common method is to use a capacitor array or a varactor to enhance the frequency doubling. Resonant frequency of the device. However, this practice severely limits the output amplitude of the multiplier.

因此,本發明提出如第2圖所示之倍頻電路110、250以解決上述問題。倍頻電路110、250至少包含輸入級111、差動電晶體對112、匹配器113、轉換器114、共振級115及輸出116。於實現本發明時,倍頻電路110、250可為94GHz的注入鎖定式三倍頻器。 Therefore, the present invention proposes the frequency multiplying circuits 110, 250 as shown in Fig. 2 to solve the above problems. The frequency multiplying circuits 110, 250 include at least an input stage 111, a differential transistor pair 112, a matcher 113, a converter 114, a resonance stage 115, and an output 116. In implementing the present invention, the frequency multiplying circuits 110, 250 can be a 94 GHz injection-locked tripler.

在本實施例中,輸入級111用以接收基頻信號fo。差動電晶體對112(如:M1、M2)及寬頻匹配器113將此基頻信號fo轉換為三倍頻訊號3fo。再者,轉換器114將三倍頻訊號3fo耦合至共振級115(如:交叉耦合對M3、M4(cross-coupled pair)),共振級115將三倍頻訊號3fo放大 後輸出,其中轉換器114在94GHz頻率下之耦合因素k約為0.8。另外,其共振負載亦進一步濾除基頻之耦合效應。在此,因差動電晶體對112之寄生效應被匹配器113吸收,是以更多三階泛音3fo能量可被提供給共振級115。此外,轉換器114可為變壓器,採用變壓器來耦合訊號的方式,當可提升一階與二階諧波隔離度。 In this embodiment, the input stage 111 is configured to receive the baseband signal f o . The differential transistor pair 112 (e.g., M1, M2) and the wideband matcher 113 convert the fundamental frequency signal f o into a triple frequency signal 3f o . Furthermore, the converter 114 couples the triple frequency signal 3f o to the resonance level 115 (eg, cross-coupled pair M3, M4), and the resonance stage 115 amplifies the triple frequency signal 3f o and outputs the same. The coupling factor k of the converter 114 at a frequency of 94 GHz is about 0.8. In addition, its resonant load further filters out the coupling effect of the fundamental frequency. Here, since the parasitic effect of the differential transistor pair 112 is absorbed by the matcher 113, more third-order overtone 3f o energy can be supplied to the resonance stage 115. In addition, the converter 114 can be a transformer, and a transformer is used to couple the signals when the first-order and second-order harmonic isolation can be improved.

第3A~3B圖係依照本發明一實施例繪示如第2圖所示之倍頻電路110、250的一種實驗數據示意圖。本發明之倍頻電路110、250藉由寬頻匹配及轉換器114耦合的方式,可大幅增加其注入鎖定範圍。如圖所示,當輸入Pin為0dBm時,其鎖定範圍(lock range)約為13GHz,遠較一般射頻傳送裝置內的倍頻器為廣。此外,當倍頻電路110、250操作於Pout約為0dBm時(當Pin為0dBm),由88GHz持續至96GHz,其衰減率小於1dB。再者,基頻及2階諧波抑制量(rejection)分別大於35dB及25dB。 3A-3B are schematic diagrams showing experimental data of the frequency multiplying circuits 110 and 250 shown in FIG. 2 according to an embodiment of the invention. The frequency multiplying circuits 110 and 250 of the present invention can greatly increase the injection locking range by means of wide frequency matching and coupling by the converter 114. As shown, when the input P in is 0 dBm, its lock range is about 13 GHz, which is much wider than the frequency multiplier in a general RF transmission device. Further, when the frequency multiplying circuits 110, 250 operate at Pout of about 0 dBm (when P in is 0 dBm), from 88 GHz to 96 GHz, the attenuation rate is less than 1 dB. Furthermore, the fundamental frequency and the second-order harmonic rejection (rejection) are greater than 35 dB and 25 dB, respectively.

第4圖係依照本發明一實施例繪示如第1圖所示之射頻傳送裝置100的一種功率分配電路130的示意圖。在60GHz時,被動分配器之體積較大,再者,配置於被動分配器後,用以補償信號功率的放大器之體積亦較大,導致整體功率分配電路之晶片的體積較大。 4 is a schematic diagram of a power distribution circuit 130 of the radio frequency transmission device 100 shown in FIG. 1 according to an embodiment of the invention. At 60 GHz, the passive distributor has a larger volume. Further, after being disposed in the passive distributor, the volume of the amplifier for compensating for the signal power is also large, resulting in a large volume of the wafer of the overall power distribution circuit.

因此,本發明提出如第4圖所示之功率分配電路130以解決上述問題。此功率分配電路130為CMOS架構之1:4主動功率分配電路。如圖所示,輸入Vin經由50Ω 匹配器131後,藉由共源極放大器M1將其轉換為電流形式。再者,四個等分之電流提供給四個共閘極放大器M2~M5,並由配置於共閘極放大器M2~M5後的共源極放大器A1~A4,對等分之電流進行補償並改善其線性度。基於共閘極放大器M2~M5所具有之低逆向增益(low reverse gain)的特性,功率分配電路130之埠對埠隔離度為30dB。如此,本發明提出之功率分配電路130可提供各路的增益,並且降低系統功耗及面積。 Accordingly, the present invention proposes a power distribution circuit 130 as shown in FIG. 4 to solve the above problems. This power distribution circuit 130 is a 1:4 active power distribution circuit of a CMOS architecture. As shown, after input V in passes through the 50 Ω matcher 131, it is converted to current form by the common source amplifier M1. Furthermore, four equal-divided currents are supplied to the four common-gate amplifiers M2 to M5, and the equal-source currents are compensated by the common source amplifiers A1 to A4 disposed after the common gate amplifiers M2 to M5. Improve its linearity. Based on the low reverse gain characteristic of the common gate amplifiers M2 to M5, the power distribution circuit 130 has a 埠 isolation of 30 dB. As such, the power distribution circuit 130 of the present invention can provide gain for each channel and reduce system power consumption and area.

第5A圖係依照本發明一實施例繪示如第4圖所示之功率分配電路130的一種增益及相位誤差的示意圖。如圖所示,功率分配電路130之增益及相位誤差之最大偏差僅為0.05dB及0.2度。第5B圖係依照本發明一實施例繪示如第4圖所示之功率分配電路130的一種小訊號量測結果示意圖。如圖所示,在此量測的是功率分配電路130在57GHz~67GHz頻段間的頻率響應,分析上述量測結果,可知功率分配電路130即便將訊號分成四路,依然能夠提供大於5dB的增益及良好的匹配關係。此外,由圖中可以看出,功率分配電路130之小訊號的尖峰增益達到7.7dB,參數S11及參數S22則分別小於-8dB及-10dB。 FIG. 5A is a schematic diagram showing a gain and phase error of the power distribution circuit 130 as shown in FIG. 4 according to an embodiment of the invention. As shown, the maximum deviation of the gain and phase error of the power distribution circuit 130 is only 0.05 dB and 0.2 degrees. FIG. 5B is a schematic diagram showing a small signal measurement result of the power distribution circuit 130 shown in FIG. 4 according to an embodiment of the invention. As shown in the figure, the frequency response of the power distribution circuit 130 between 57 GHz and 67 GHz is measured. The above measurement results are analyzed. It can be seen that the power distribution circuit 130 can provide a gain greater than 5 dB even if the signal is divided into four channels. And a good match. In addition, as can be seen from the figure, the peak gain of the small signal of the power distribution circuit 130 reaches 7.7 dB, and the parameter S 11 and the parameter S 22 are less than -8 dB and -10 dB, respectively.

第6圖係依照本發明一實施例繪示如第1圖所示之射頻傳送裝置100的一種相位偏移電路142~148的示意圖。大體而言,相位偏移電路142~148可為二階段式相位內插相移器,輸入訊號RFin先透過向量產生器910(vector generator)產生正交的兩組差動訊號,利用兩組相位選擇器920產生兩組相鄰相位的訊號,再利用相位選擇器940調整兩組相位的比例,以合成出最終的訊號。 FIG. 6 is a schematic diagram showing a phase shift circuit 142-148 of the radio frequency transmission device 100 shown in FIG. 1 according to an embodiment of the invention. In general, the phase shift circuits 142-148 can be two-stage phase interpolation phase shifters, and the input signal RF in first generates two orthogonal sets of differential signals through a vector generator 910, using two groups. The phase selector 920 generates two sets of signals of adjacent phases, and then uses the phase selector 940 to adjust the ratio of the two sets of phases to synthesize the final signal.

在一實施例中,相位偏移電路為94GHz之7-bit相位偏移電路。如圖所示,向量產生器910將射頻輸入RFin轉換為差動正交信號,此差動正交信號平行輸入相位選擇器920。相位選擇器920係被粗調數位類比轉換器(Coarse DAC)930所控制,粗調數位類比轉換器930包含三個電流源及3個控制開關,此三個電流源之電流值比例為2:5:7,透過粗調數位類比轉換器930之控制,相位選擇器920可產生16種相位狀態,其解析度可達到22.5度。 In one embodiment, the phase shift circuit is a 7 GHz phase shift circuit of 94 GHz. As shown, vector generator 910 converts RF input RF in into a differential quadrature signal that is input to phase selector 920 in parallel. The phase selector 920 is controlled by a coarse-tuning digital analog converter (Coarse DAC) 930. The coarse-tuning digital analog converter 930 includes three current sources and three control switches. The current ratio of the three current sources is 2: 5:7, through the control of the coarse-tuning digital analog converter 930, the phase selector 920 can generate 16 phase states with a resolution of 22.5 degrees.

接著,相位選擇器940進一步對相位選擇器920所產生之輸出進行處理,此相位選擇器940係被細調數位類比轉換器(Fine DAC)950所控制,相位選擇器940包含五個電流源。相位選擇器940用以合成另外3-bit相位狀態。此外,邏輯編碼器(Logic Encoder)960係以CMOS來實現,如此,邏輯編碼器960得以7-bit二位元編碼來控制相位偏移電路152~158內之其餘元件。藉由細調數位類比轉換器950及邏輯編碼器960之控制,相位選擇器940之輸出的解析度可達到2.8度。 Next, phase selector 940 further processes the output produced by phase selector 920, which is controlled by a fine-tuning digital analog converter (Fine DAC) 950, which includes five current sources. Phase selector 940 is used to synthesize additional 3-bit phase states. In addition, the Logic Encoder 960 is implemented in CMOS. Thus, the logic encoder 960 is capable of 7-bit two-bit encoding to control the remaining components in the phase shift circuits 152-158. By fine-tuning the control of the digital analog converter 950 and the logic encoder 960, the resolution of the output of the phase selector 940 can reach 2.8 degrees.

一般僅進行一階段處理的相位偏移電路,往往需採用極高解析度的數位類比轉換器,如此,將增加電路實現之複雜度。相較於一般的偏移電路,本發明之相位偏移電 路152~158採用兩階段處理,因此,其僅需採用低階析度之數位類比轉換器即可對輸入進行精細的相位偏移。 A phase shift circuit that generally only performs one-stage processing often requires a very high resolution digital analog converter, which increases the complexity of the circuit implementation. Phase offset power of the present invention compared to a general offset circuit Circuits 152-158 are processed in two stages, so that only a low-order resolution digital analog converter can be used to fine-tune the input.

第7圖係依照本發明一實施例繪示如第6圖所示之相位偏移電路152~158的一種實驗數據的示意圖。如圖所示,在90~100GHz間,相位偏移電路152~158之頻段相位及增益誤差分別為2.5度及0.8dB。再者,在94GHz時,相位偏移電路152~158之相位及增益的誤差分別為1.4度及0.73dB。 Figure 7 is a diagram showing experimental data of phase shift circuits 152-158 as shown in Figure 6 in accordance with an embodiment of the present invention. As shown in the figure, between 90 and 100 GHz, the phase shift and phase error of the phase shift circuits 152 to 158 are 2.5 degrees and 0.8 dB, respectively. Furthermore, at 94 GHz, the phase and gain errors of the phase shift circuits 152 to 158 are 1.4 degrees and 0.73 dB, respectively.

第8圖係依照本發明一實施例繪示如第1圖所示之射頻傳送裝置100的一種放大電路152~158的示意圖。如圖所示,輸入級1110接收並放大射頻信號RFin,接著,耦合電路1120將射頻信號RFin分成兩路。耦合電路1120耦合部分射頻信號RFin功率(諸如25%之射頻信號RFin功率)至功率偵測器1140,功率偵測器1140偵測射頻信號以輸出偵測信號。此外,耦合電路1120將大部分射頻信號RFin功率耦合至匹配器1150,並由匹配器1150進行阻抗匹配後,傳送至複數個放大器1160,複數個放大器1160在此可為三級的共源極放大器,由三級的共源極放大器來放大射頻信號RFinFIG. 8 is a schematic diagram showing an amplification circuit 152-158 of the radio frequency transmission device 100 shown in FIG. 1 according to an embodiment of the invention. As shown, the input stage 1110 receives and amplifies the RF signal RF in , and then the coupling circuit 1120 splits the RF signal RF in into two paths. The coupling circuit 1120 couples part of the RF signal RF in power (such as 25% of the RF signal RF in power) to the power detector 1140, and the power detector 1140 detects the RF signal to output the detection signal. In addition, the coupling circuit 1120 couples most of the RF signal RF in power to the matcher 1150 and performs impedance matching by the matcher 1150 to be transmitted to a plurality of amplifiers 1160, where the plurality of amplifiers 1160 can be three-stage common source. The amplifier uses a three-stage common source amplifier to amplify the RF signal RF in .

詳細而言,在經由50Ω匹配器1130對射頻信號RFin進行匹配後,電晶體M1將射頻信號RFin功率轉換為電流模式,同時,電晶體M2亦產生電流。此電流經由電晶體M3~M5及電阻R1轉換為適當的電壓準位,而產生偵測 信號。另外,若射頻信號RFin較小,電晶體M1、M2的電流較小,功率偵測器1140利用其電流鏡M3將電流複製至電晶體M4,隨後,功率偵測器1140利用其電阻R1及電晶體M5產生一小電壓Vb。若射頻信號RFin變大,流經功率偵測器1140之電流鏡M3的電流隨之變大,相應地,電阻R1兩端的電壓也會隨之上升,使得電壓Vb提升。如此,當射頻信號RFin較小時,電壓Vb會相應地被調低,因此,功耗較小。上述可適性偏壓機制可使功率偵測器1140在不同的輸入功率下,均能得到最佳的效率。 In detail, after the RF signal RF in is matched via the 50 Ω matcher 1130, the transistor M1 converts the RF signal RF in power into a current mode, and at the same time, the transistor M2 also generates a current. This current is converted to an appropriate voltage level via transistors M3 to M5 and resistor R1 to generate a detection signal. In addition, if the RF signal RF in is small, the currents of the transistors M1, M2 are small, the power detector 1140 uses its current mirror M3 to copy the current to the transistor M4, and then the power detector 1140 utilizes its resistor R1 and The transistor M5 produces a small voltage V b . If the RF signal RF in becomes larger, the current flowing through the current mirror M3 of the power detector 1140 becomes larger, and accordingly, the voltage across the resistor R1 also rises, causing the voltage V b to rise. Thus, when the RF signal RF in is small, the voltage V b is correspondingly lowered, and therefore, the power consumption is small. The above adaptive biasing mechanism enables the power detector 1140 to achieve optimum efficiency at different input powers.

第9A~9C圖係依照本發明一實施例繪示如第8圖所示之放大電路152~158的一種實驗數據的示意圖。請參照第9A圖,當放大電路152~158的偏壓Vb高於特定電壓(例如:約0.8伏特(V))時,輸出功率將不再顯著成長,然而,直流功率卻會顯著上升,據此,放大電路152~158更包含電壓箝位電晶體M6,以根據功率偵測器1140所產生之偵測信號來限制最高偏壓Vb在約0.8伏特(V)。接著,該等放大器1160根據偏壓Vb以放大射頻信號之功率。此外,放大電路152~158更包含低通濾波器(例如:1/gm3與C1、R2與C2)以穩定功率偵測狀態。 9A to 9C are diagrams showing an experimental data of the amplifying circuits 152 to 158 shown in Fig. 8 according to an embodiment of the present invention. Referring to FIG. 9A, when the bias voltage Vb of the amplifying circuits 152-158 is higher than a specific voltage (for example, about 0.8 volts (V)), the output power will not grow significantly, however, the DC power will rise significantly. Therefore, the amplifying circuits 152-158 further include a voltage clamping transistor M6 to limit the highest bias voltage Vb to about 0.8 volts (V) according to the detection signal generated by the power detector 1140. The amplifiers 1160 then amplify the power of the radio frequency signal based on the bias voltage Vb. In addition, the amplifying circuits 152-158 further include low-pass filters (for example, 1/gm3 and C1, R2 and C2) to stabilize the power detection state.

在本實施例中,放大電路152~158可根據輸入射頻功率RFin而動態地調整偏壓Vb,如此,由於偏壓Vb在增益壓縮區段(gain compression region)將會提升,是以放大電路152~158之輸出線性度將被改善。換言之,AM/AM失 真可被降至最低。此外,相較於一般採用迴授控制之放大電路,本發明之放大電路採用前饋機制,因此,可達到更佳的功率效果。再者,一般採用迴授控制之放大電路需將其部分輸出迴授至功率偵測器,然而,本發明之放大電路採用的全類比適應性偏壓技術將不需採用任何資料轉換器或數位邏輯電路。在頻寬57~66GHz時,本發明之放大電路152~158在消耗1V供電中的30mW後,其增益為22dB,參數S11小於-8dB而參數S22小於-11dB。 In the present embodiment, the amplifier circuit 152 to 158 may dynamically adjust the bias voltage Vb based on the input RF power RF in, so, due to the bias voltage Vb will increase the gain in the compression section (gain compression region), the amplifier circuit is The output linearity of 152~158 will be improved. In other words, AM/AM distortion can be minimized. In addition, the amplifying circuit of the present invention adopts a feedforward mechanism as compared with an amplifying circuit generally employing feedback control, so that a better power effect can be achieved. Furthermore, the amplifying circuit generally adopts the feedback control needs to output part of the output to the power detector. However, the full analog biasing technique adopted by the amplifying circuit of the present invention does not need to use any data converter or digital bit. Logic circuit. At a bandwidth of 57 to 66 GHz, the amplifying circuits 152 to 158 of the present invention have a gain of 22 dB after consuming 30 mW of the 1 V power supply, the parameter S 11 is less than -8 dB and the parameter S 22 is less than -11 dB.

請參閱第9B圖,由此可看出本發明之放大電路152~158的附加功率效率(power added efficiency,PAE),在Pin為-13dB至Pin大於0dB之間均維持在12%左右。相較於現有的採用CMOS架構之放大電路的附加功率效率僅有4%而言,本發明之放大電路152~158的附加功率效率具有顯著之提升。此外,本發明之放大電路152~158的附加功率效率在OP1dB(約為9.2dBm)及OP1dB回推6dB處分別為12.1%及6.5%。此外,請參閱第9C圖,編號1210之曲線為本發明之放大電路採用適應性偏壓技術之結果,而編號1220之曲線為本發明之放大電路未採用適應性偏壓技術之結果,如圖所示,當本發明之放大電路採用適應性偏壓技術時,其OP1dB可提升約1.5至3.7dB。 Referring to FIG. 9B, it can be seen that the additional power efficiency (PAE) of the amplifying circuits 152-158 of the present invention is maintained at about 12% between P in of -13 dB and P in greater than 0 dB. . The additional power efficiency of the amplifying circuits 152-158 of the present invention is significantly improved compared to the existing additional power efficiency of the amplifying circuit using the CMOS architecture of only 4%. In addition, the additional power efficiencies of the amplifying circuits 152-158 of the present invention are 12.1% and 6.5% at OP 1dB (about 9.2dBm) and OP 1dB back-feeding 6dB, respectively. In addition, please refer to FIG. 9C. The curve of No. 1210 is the result of the adaptive biasing technique of the amplifying circuit of the present invention, and the curve of No. 1220 is the result of the adaptive biasing technique of the amplifying circuit of the present invention. As shown, when the amplifying circuit of the present invention employs an adaptive biasing technique, its OP 1dB can be increased by about 1.5 to 3.7 dB .

第10圖係依照本發明一實施例繪示如第1圖所示之射頻接收裝置200的一種可變增益低雜訊放大電路222~228的示意圖。一般增益控制技術,例如偏壓調整或電 流操控分別存在匹配及線性度的問題。如第10圖所示,本發明提供一種可變增益低雜訊放大電路222~228以解決上述問題,首先,輸入級(stage1)用以濾除射頻信號之雜訊,接著,後續串接的可變增益放大器(stage2~4)則可用以調整增益。 FIG. 10 is a schematic diagram showing a variable gain low noise amplifying circuit 222-228 of the radio frequency receiving apparatus 200 shown in FIG. 1 according to an embodiment of the invention. General gain control techniques such as bias adjustment or power Flow manipulation has problems with matching and linearity, respectively. As shown in FIG. 10, the present invention provides a variable gain low noise amplifying circuit 222~228 to solve the above problem. First, the input stage (stage1) is used to filter out the noise of the radio frequency signal, and then, the subsequent serial connection. Variable gain amplifiers (stage2~4) can be used to adjust the gain.

詳細而言,輸入級包含匹配電路1310、共源極電晶體M0及匹配電路1320。匹配電路1310用以進行阻抗匹配,共源極電晶體M0根據輸入訊號及偏壓Vb產生輸出訊號,匹配電路1320用以與可變增益放大器進行阻抗匹配。 In detail, the input stage includes a matching circuit 1310, a common source transistor M0, and a matching circuit 1320. The matching circuit 1310 is used for impedance matching. The common source transistor M0 generates an output signal according to the input signal and the bias voltage V b , and the matching circuit 1320 is used for impedance matching with the variable gain amplifier.

此外,可變增益放大器各自包含複數個電晶體,而能提供多階段的增益控制,以放大輸入射頻信號之功率,諸如為調整增益時,可根據控制信號導通電晶體M1或M2以將射頻輸入接地,藉以降低增益。再者,由於這些電晶體皆採用交流耦合的方式連接,因此,電晶體M3的偏壓點及頻率響應在不同階段的增益下皆不會變化。另外,這些電晶體的導通電阻係經過配置,以使多階段增益控制之可控制增益範圍大於23dB。 In addition, the variable gain amplifiers each include a plurality of transistors, and can provide multi-stage gain control to amplify the power of the input RF signal. For example, when adjusting the gain, the crystal M1 or M2 can be energized according to the control signal to input the RF. Grounding to reduce the gain. Moreover, since these transistors are connected by AC coupling, the bias point and frequency response of the transistor M3 do not change under different stages of gain. In addition, the on-resistance of these transistors is configured such that the controllable gain range of the multi-stage gain control is greater than 23 dB.

再者,由於可變增益低雜訊放大電路222~228之輸出P1dB相對穩定,因此,輸入P1dB(IP1dB)由高增益至低增益提升至少11dB。相對而言,採用電流操控之增益控制技術並無法達到上述益處。 Furthermore, since the output P 1dB of the variable gain low noise amplifying circuits 222 to 228 is relatively stable, the input P 1dB (IP 1dB ) is increased by at least 11 dB from high gain to low gain. Relatively speaking, current control gain control techniques do not achieve these benefits.

第11A~11B圖係依照本發明一實施例繪示如第10圖所示之可變增益低雜訊放大電路222~228的一種實驗數 據的示意圖。如第11A圖所示,多階段增益之參數S21散佈於23.5dB至6dB之間,而參數S11及S22則分別小於-10dB及-12dB。此外,第11B圖中繪示在60GHz時,增益壓縮量測由最高增益狀態(以Coded 0表示)至最低狀態(以Coded 6表示),如圖所示,輸入P1dB由-27.8dBm改善至-15dBm。 11A-11B are schematic diagrams showing experimental data of variable gain low noise amplifying circuits 222-228 shown in FIG. 10 according to an embodiment of the invention. As shown in Fig. 11A, the multi-stage gain parameter S 21 is spread between 23.5 dB and 6 dB, while the parameters S 11 and S 22 are less than -10 dB and -12 dB, respectively. In addition, Figure 11B shows that at 60 GHz, the gain compression measurement is from the highest gain state (indicated by Coded 0) to the lowest state (indicated by Coded 6). As shown, the input P 1dB is improved from -27.8 dBm to -15dBm.

此外,射頻接收裝置200之該等相位偏移電路232~238可採用第6圖所示之相位偏移電路來實現,為使本發明說明簡潔,射頻接收裝置200之該等相位偏移電路232~238的詳細實現方式,請參照第6圖之相關說明,在此不作贅述。 In addition, the phase shift circuits 232-238 of the radio frequency receiving device 200 can be implemented by using the phase shift circuit shown in FIG. 6. For the sake of brevity of the present invention, the phase shift circuit 232 of the radio frequency receiving device 200. For detailed implementation of ~238, please refer to the related description of Figure 6, which will not be described here.

由上述本發明實施方式可知,應用本發明具有下列優點。本發明提出的射頻傳送裝置之輸出功率及效率較高,另外,本發明提出的射頻接收裝置之線性度及雜訊指數皆被有效地改善。再者,本發明提出的兩階段式相位內插相移器能夠產生高解析度的相移量,而能增加整體系統天線輻射方向之解析度。 It will be apparent from the above-described embodiments of the present invention that the application of the present invention has the following advantages. The output power and efficiency of the radio frequency transmission device proposed by the invention are high, and the linearity and noise index of the radio frequency receiving device proposed by the invention are effectively improved. Furthermore, the two-stage phase interpolation phase shifter proposed by the present invention can generate a high-resolution phase shift amount, and can increase the resolution of the radiation direction of the overall system antenna.

雖然上文實施方式中揭露了本發明的具體實施例,然其並非用以限定本發明,本發明所屬技術領域中具有通常知識者,在不悖離本發明之原理與精神的情形下,當可對其進行各種更動與修飾,因此本發明之保護範圍當以附隨申請專利範圍所界定者為準。 Although the embodiments of the present invention are disclosed in the above embodiments, the present invention is not intended to limit the invention, and the present invention may be practiced without departing from the spirit and scope of the invention. Various changes and modifications may be made thereto, and the scope of the invention is defined by the scope of the appended claims.

100‧‧‧射頻傳送裝置 100‧‧‧RF transmitter

110‧‧‧倍頻電路 110‧‧‧Multiplier circuit

120‧‧‧混頻電路 120‧‧‧mixing circuit

130‧‧‧功率分配電路 130‧‧‧Power distribution circuit

142、144、146、148‧‧‧相位偏移電路 142, 144, 146, 148‧‧‧ phase offset circuit

152、154、156、158‧‧‧放大電路 152, 154, 156, 158‧‧‧ amplifying circuit

162、164、166、168‧‧‧天線 162, 164, 166, 168‧‧ antenna

200‧‧‧射頻接收裝置 200‧‧‧RF receiver

212、214、216、218‧‧‧天線 212, 214, 216, 218‧‧‧ antenna

222、224、226、228‧‧‧放大電路 222, 224, 226, 228‧‧‧ amplifying circuit

232、234、236、238‧‧‧相位偏移電路 232, 234, 236, 238‧‧‧ phase offset circuit

240‧‧‧混頻電路 240‧‧‧mixing circuit

250‧‧‧倍頻電路 250‧‧‧Multiplier circuit

Claims (10)

一種射頻傳送裝置,包含:一倍頻電路,用以放大一基頻信號之頻率以產生一諧波信號;一混頻電路,電性耦接於該倍頻電路,並用以依據一輸入信號與該諧波信號以產生一射頻信號;一功率分配電路,電性耦接於該混頻電路,並用以依據該射頻信號以產生複數個子射頻信號,其中該功率分配電路包含:一第一放大器;複數個第二放大器,並聯於一共用節點及一電源之間,其中該共用節點電性耦接於該第一放大器;以及複數個第三放大器,分別電性耦接於該等第二放大器;複數個相位偏移電路,分別對該等子射頻信號進行相位偏移;複數個放大電路,分別放大該等子射頻信號之功率,其中該等放大電路的每一者包含:一輸入級,用以接收該子射頻信號;一第一耦合器,電性耦接於該輸入級;複數個第四放大器,該等第四放大器彼此串接,並電性耦接於該第一耦合器,其中該第一耦合器用以 耦合部分該子射頻信號之功率至該等第四放大器,該等第四放大器根據一偏壓以放大該子射頻信號之功率;一功率偵測器,電性耦接於該第一耦合器,其中該第一耦合器用以耦合部分該子射頻信號之功率至該功率偵測器,該功率偵測器用以偵測該子射頻信號以輸出一偵測信號;以及一電壓箝位器,電性耦接於該功率偵測器,並用以根據該偵測信號以控制該偏壓;以及複數個天線,用以傳送該等子射頻信號。 An RF transmission device includes: a frequency doubling circuit for amplifying a frequency of a fundamental frequency signal to generate a harmonic signal; a mixing circuit electrically coupled to the frequency doubling circuit and configured to The harmonic signal is used to generate a radio frequency signal; a power distribution circuit is electrically coupled to the mixing circuit and configured to generate a plurality of sub-radio signals according to the radio frequency signal, wherein the power distribution circuit comprises: a first amplifier; a plurality of second amplifiers are connected in parallel between a common node and a power source, wherein the common node is electrically coupled to the first amplifier; and a plurality of third amplifiers are electrically coupled to the second amplifiers; a plurality of phase shifting circuits respectively performing phase shifting on the sub-radio signals; and a plurality of amplifying circuits respectively amplifying powers of the sub-radio signals, wherein each of the amplifying circuits comprises: an input stage, Receiving the sub-RF signal; a first coupler electrically coupled to the input stage; a plurality of fourth amplifiers connected in series with each other and electrically coupled To the first coupler, wherein the first coupler is configured Coupling a portion of the power of the sub-radio signal to the fourth amplifier, the fourth amplifier amplifying the power of the sub-radio signal according to a bias voltage; a power detector electrically coupled to the first coupler, The first coupler is configured to couple a portion of the power of the sub-RF signal to the power detector, the power detector is configured to detect the sub-RF signal to output a detection signal; and a voltage clamp, electrical The power detector is coupled to the detection signal to control the bias voltage; and the plurality of antennas are configured to transmit the sub-radio signals. 如請求項1所述之射頻傳送裝置,其中該等放大電路的每一者包含:一第一匹配器,電性耦接於該第一耦合器與該功率偵測器之間;以及一第二匹配器,電性耦接於該第一耦合器與該等第四放大器之間。 The radio frequency transmitting device of claim 1, wherein each of the amplifying circuits comprises: a first matching device electrically coupled between the first coupler and the power detector; and a first The second matcher is electrically coupled between the first coupler and the fourth amplifiers. 如請求項1所述之射頻傳送裝置,其中該倍頻電路為一三倍頻電路,其中該三倍頻電路包含:一輸入級;一差動電晶體對,電性耦接於該輸入級;一匹配器,電性耦接於該差動放大器; 一變壓器,電性耦接於該匹配器;一交跨電晶體對,電性耦接於該變壓器;以及一輸出級。 The radio frequency transmission device of claim 1, wherein the frequency multiplying circuit is a triple frequency circuit, wherein the triple frequency circuit comprises: an input stage; a differential transistor pair electrically coupled to the input stage a matching device electrically coupled to the differential amplifier; a transformer electrically coupled to the matching device; a cross-transistor pair electrically coupled to the transformer; and an output stage. 如請求項1所述之射頻傳送裝置,其中該功率分配電路包含:一匹配器,電性耦接於該第一放大器。 The radio frequency transmission device of claim 1, wherein the power distribution circuit comprises: a matching device electrically coupled to the first amplifier. 如請求項1所述之射頻傳送裝置,其中該第一放大器為共源極放大器,該等第二放大器為共閘極放大器,該等第三放大器為共源極放大器,該等第四放大器為共源極放大器。 The radio frequency transmission device of claim 1, wherein the first amplifier is a common source amplifier, the second amplifiers are common gate amplifiers, and the third amplifiers are common source amplifiers, and the fourth amplifiers are Common source amplifier. 如請求項1所述之射頻傳送裝置,其中該相位偏移電路包含:一第二耦合器及至少二巴輪轉換器;至少二第一相位選擇器,電性耦接於該第二耦合器及該至少二巴輪轉換器;第一數位類比轉換器,電性耦接於該等第一相位選擇器;一第二相位選擇器,電性耦接於該等第一相位選擇器;一第二數位類比轉換器,電性耦接於該第二相位選擇器;以及 一邏輯編碼器,電性耦接於該第一數位類比轉換器及該第二數位類比轉換器。 The radio frequency transmitting device of claim 1, wherein the phase shifting circuit comprises: a second coupler and at least two bar wheel converters; at least two first phase selectors electrically coupled to the second coupler And the at least two-bar converter; the first digital analog converter is electrically coupled to the first phase selectors; and the second phase selector is electrically coupled to the first phase selectors; a second digital analog converter electrically coupled to the second phase selector; A logic encoder is electrically coupled to the first digital analog converter and the second digital analog converter. 一種射頻接收裝置,包含:複數個天線,用以接收複數個射頻信號;複數個可變增益低雜訊放大電路,電性耦接於該等天線,並用以放大該等射頻信號,其中該等可變增益低雜訊放大電路的每一者包含:一輸入級,用以濾除該等射頻信號之雜訊;以及複數個可變增益放大器,該等可變增益放大器彼此串接,並電性耦接於該輸入級,其中該等可變增益放大器的每一者包含:一放大單元,用以放大該等射頻信號之功率;以及一下拉單元,電性耦接於該放大單元,並用以根據一控制信號以將該放大單元接地;以及複數個相位偏移電路,分別電性耦接於該等可變增益低雜訊放大電路,並用以對該等射頻信號進行相位偏移;一倍頻電路,用以放大一基頻信號之頻率以產生一諧波信號;一混頻電路,電性耦接於該等相位偏移電路及該倍頻電路,並用以依據該等射頻信號與該諧波信號以產生一輸出信號。 A radio frequency receiving device includes: a plurality of antennas for receiving a plurality of radio frequency signals; and a plurality of variable gain low noise amplifying circuits electrically coupled to the antennas for amplifying the radio frequency signals, wherein the Each of the variable gain low noise amplifying circuits includes: an input stage for filtering noise of the RF signals; and a plurality of variable gain amplifiers connected in series and electrically Each of the variable gain amplifiers includes: an amplifying unit for amplifying the power of the radio frequency signals; and a pull-down unit electrically coupled to the amplifying unit and The grounding unit is grounded according to a control signal; and the plurality of phase shifting circuits are respectively electrically coupled to the variable gain low noise amplifying circuits, and are used for phase shifting the radio frequency signals; a frequency multiplying circuit for amplifying a frequency of a fundamental frequency signal to generate a harmonic signal; a mixing circuit electrically coupled to the phase shifting circuit and the frequency multiplying circuit, and for Pilot signal and the harmonic signal to generate an output signal. 如請求項7所述之射頻接收裝置,其中該輸入級包含:一第一匹配器;一共源極放大器,電性耦接於該第一匹配器;以及一第二匹配器,電性耦接於該共源極放大器。 The radio frequency receiving device of claim 7, wherein the input stage comprises: a first matching unit; a common source amplifier electrically coupled to the first matching unit; and a second matching unit electrically coupled The common source amplifier. 如請求項7所述之射頻接收裝置,其中該倍頻電路為一三倍頻電路,其中該三倍頻電路包含:一輸入級;一差動電晶體對,電性耦接於該輸入級;一匹配器,電性耦接於該差動放大器;一變壓器,電性耦接於該匹配器;一交跨電晶體對,電性耦接於該變壓器;以及一輸出級。 The radio frequency receiving device of claim 7, wherein the frequency multiplying circuit is a triple frequency circuit, wherein the triple frequency circuit comprises: an input stage; a differential transistor pair electrically coupled to the input stage a matching device electrically coupled to the differential amplifier; a transformer electrically coupled to the matching device; a cross-transistor pair electrically coupled to the transformer; and an output stage. 如請求項7所述之射頻接收裝置,其中該相位偏移電路包含:一耦合器及至少二巴輪轉換器;至少二第一相位選擇器,電性耦接於該耦合器及該至少二巴輪轉換器;一第一數位類比轉換器,電性耦接於該等第一相位選擇器; 一第二相位選擇器,電性耦接於該等第一相位選擇器;第二數位類比轉換器,電性耦接於該第二相位選擇器;以及一邏輯編碼器,電性耦接於該第一數位類比轉換器及該第二數位類比轉換器。 The radio frequency receiving device of claim 7, wherein the phase shifting circuit comprises: a coupler and at least two bar wheel converters; at least two first phase selectors electrically coupled to the coupler and the at least two a first round digitizer, electrically coupled to the first phase selectors; a second phase selector electrically coupled to the first phase selectors; a second digital analog converter electrically coupled to the second phase selector; and a logic encoder electrically coupled to the second phase selector The first digital analog converter and the second digital analog converter.
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