TW201544285A - Method for producing polyimide film and electronic device, and method for peeling off coating film - Google Patents

Method for producing polyimide film and electronic device, and method for peeling off coating film Download PDF

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TW201544285A
TW201544285A TW104115047A TW104115047A TW201544285A TW 201544285 A TW201544285 A TW 201544285A TW 104115047 A TW104115047 A TW 104115047A TW 104115047 A TW104115047 A TW 104115047A TW 201544285 A TW201544285 A TW 201544285A
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polyimide film
flash
film
polyimide
glass substrate
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TW104115047A
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Chinese (zh)
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TWI630083B (en
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Kiyomi Imagawa
Kenji Iida
Shigeo Kiba
Yusuke Tomita
Takahiro Kimura
Yutaka Kuwata
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Mitsui Chemicals Inc
Screen Holdings Co Ltd
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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18Manufacture of films or sheets
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/02Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/06Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D7/00Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
    • B05D7/24Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials

Abstract

Provided is an electronic-device production method in which a base film satisfactorily adheres to a substrate before a peeling treatment, and can be easily peeled from the substrate after the peeling treatment. In an electronic-device production method according to the present invention, a device (83) is formed on a base film, and at least a polyimide film is provided as the base film. The electronic-device production method includes: a step (a) in which a polyimide varnish including a soluble polyimide resin, a thermosetting crosslinking material, and a solvent, is applied to a substrate (81), and dried at a temperature greater than the glass transition point of the polyimide resin, but less than the crosslinking initiation temperature of the crosslinking material, to form a coating film; a step (c) in which the device (83) is formed on the polyimide film (82) obtained as a result of step (a); and a step (b) in which, after the crosslinking reaction of the crosslinking material has been promoted, the polyimide film (82) obtained as a result of undergoing step (c) is peeled from the substrate (81).

Description

聚醯亞胺膜的製造方法、電子機器的製造方法以及塗膜的剝離方法Method for producing polyimide film, method for producing electronic device, and method for peeling coating film

本發明是有關於一種聚醯亞胺膜的製造方法以及塗膜的剝離方法。而且, 本發明是有關於一種使用所述聚醯亞胺膜的製造方法、以及塗膜的剝離方法形成的電子機器的製造方法。The present invention relates to a method for producing a polyimide film and a method for peeling a coating film. Moreover, the present invention relates to a method for producing an electronic device formed by using the method for producing the polyimide film and the method for peeling off a coating film.

近年來, 液晶顯示器或有機電致發光( electroluminescence,EL)顯示器等平板顯示器的薄型化得到推進, 正在開發可自由地彎折的可撓性平板顯示器等可撓性顯示器( flexible display)。於目前主流的平板顯示器中, 因使用玻璃作為基板, 故重量重且容易破損, 但可撓性顯示器使用基底膜, 因此具有非常薄而重量輕、且不易破損的優點。而且, 因可賦予可撓性, 故亦可實現曲面下的顯示器顯示。作為可撓性顯示器, 亦正在推進電子紙的開發。In recent years, the thickness of flat panel displays such as liquid crystal displays and organic electroluminescence (EL) displays has been advanced, and flexible displays such as flexible flat panel displays that can be freely bent are being developed. In the current mainstream flat panel display, since glass is used as the substrate, the weight is heavy and easily broken. However, since the flexible display uses the base film, it has an advantage of being extremely thin, light in weight, and not easily broken. Moreover, since flexibility can be imparted, display display under a curved surface can also be realized. As a flexible display, the development of electronic paper is also being promoted.

可撓性顯示器一般於作為支撐體的玻璃基板形成成為基底膜的樹脂膜,並將元件安裝(形成)於基底膜上。並且,最終經由將基底膜自玻璃基板剝離的步驟而得以製造。於專利文獻1中提出了如下方法:於基板上依序積層第1材料層、第2材料層、被剝離層而形成積層體,於剝離前進行使第1材料層與第2材料層的密接性局部降低的處理(雷射光、加壓等),然後藉由物理手段進行剝離,藉此於第2材料層的層內或界面進行分離。 現有技術文獻 專利文獻A flexible display generally forms a resin film as a base film on a glass substrate as a support, and mounts (forms) the element on the base film. Further, it is finally produced by the step of peeling off the base film from the glass substrate. Patent Document 1 proposes a method of sequentially laminating a first material layer, a second material layer, and a peeled layer on a substrate to form a laminate, and performing adhesion between the first material layer and the second material layer during peeling. The locally reduced treatment (laser light, pressure, etc.) is then separated by physical means to separate in the layer or interface of the second material layer. Prior art literature

專利文獻1:日本專利特開2003-163338號公報Patent Document 1: Japanese Patent Laid-Open Publication No. 2003-163338

[發明所欲解決之課題][Problems to be solved by the invention]

根據將元件安裝於基底膜上的方法,就可簡便地製造可撓性顯示器等電子機器的方面而言優異。然而,於安裝元件時需以支撐體的玻璃基板與基底膜樹脂不會剝離的方式使兩者間具有接著性。因此,為了於安裝後自玻璃基板剝離基底膜,需要進行技術上的鑽研。作為剝離方法,包括利用雷射光燒切基底膜表面的方法、利用強力撕下的方法,但有時會因雷射光的能量而元件被破壞或基底膜受損,於製品的良率方面存在課題。According to the method of mounting an element on a base film, it is excellent in the point which can manufacture an electronic device, such as a flexible display easily. However, when the component is mounted, it is necessary to have adhesion between the glass substrate of the support and the base film resin so as not to be peeled off. Therefore, in order to peel off the base film from the glass substrate after mounting, technical research is required. The peeling method includes a method of burning the surface of the base film by laser light and a method of strongly peeling off, but the element may be damaged or the base film may be damaged due to the energy of the laser light, and there is a problem in the yield of the product. .

於可撓性顯示器等電子機器的製造中,於市場上強烈要求一種直至形成元件之前玻璃基板與基底膜強有力地接著、於形成元件後可容易地自玻璃基板剝離基底膜的技術。再者,雖針對可撓性基板中的課題進行了敍述,但在欲於基底膜上形成元件的各種電子機器中亦存在同樣的課題。In the manufacture of an electronic device such as a flexible display, there is a strong demand in the market for a technique in which the glass substrate and the base film are strongly adhered to each other until the element is formed, and the base film can be easily peeled off from the glass substrate after the element is formed. Further, although the problem in the flexible substrate has been described, the same problem is also caused in various electronic devices in which components are to be formed on the underlying film.

本發明是鑒於所述背景而成,其目的在於提供一種於剝離處理前支撐體與基底膜良好地接著、於剝離處理後支撐體與基底膜可容易地剝離,且良率高的電子機器的製造方法以及塗膜的剝離方法,以及提供一種於所述基底膜的至少一層中使用的聚醯亞胺膜的製造方法。 [解決課題之手段]The present invention has been made in view of the above circumstances, and an object thereof is to provide an electronic device in which a support body and a base film are favorably adhered to each other after a peeling treatment, and a support body and a base film are easily peeled off after a peeling treatment, and a yield is high. A manufacturing method and a peeling method of a coating film, and a method of producing a polyimide film used in at least one layer of the base film. [Means for solving the problem]

本發明者等人反復努力研究,結果發現於以下態樣中可解決本發明的課題,從而完成了本發明。 [1] 一種聚醯亞胺膜的製造方法,包括:步驟(a),將含有可溶性聚醯亞胺樹脂、熱硬化性的交聯材及溶劑的聚醯亞胺清漆塗佈於支撐體上,並於超過所述可溶性聚醯亞胺樹脂的玻璃轉移溫度(glass transition point)且未滿熱硬化性的所述交聯材的交聯起始溫度的條件下進行乾燥而形成塗膜;以及步驟(b),將經由步驟(a)而得的聚醯亞胺膜於促進所述交聯材的交聯反應後自所述支撐體剝離。 [2] 如[1]所述的聚醯亞胺膜的製造方法,其中於步驟(b)中,自所述支撐體側對所述聚醯亞胺膜照射閃光。 [3] 一種電子機器的製造方法,其於基底膜上形成元件,且作為所述基底膜,至少具有聚醯亞胺膜,所述電子機器的製造方法包括:步驟(a),將含有可溶性聚醯亞胺樹脂、熱硬化性的交聯材及溶劑的聚醯亞胺清漆塗佈於支撐體上,並於超過所述可溶性聚醯亞胺樹脂的玻璃轉移溫度且未滿熱硬化性的所述交聯材的交聯起始溫度的條件下進行乾燥而形成塗膜;步驟(c),於藉由步驟(a)而得的聚醯亞胺膜上形成所述元件;以及步驟(b),將經由步驟(c)而得的所述聚醯亞胺膜於促進所述交聯材的交聯反應後自所述支撐體剝離。 [4] 如[3]所述的電子機器的製造方法,其中步驟(c)包括利用氣相成長法的薄膜形成製程。 [5] 如[3]或[4]所述的電子機器的製造方法,其中步驟(b)自所述支撐體側對所述聚醯亞胺膜照射閃光。 [6] 如[5]所述的電子機器的製造方法,其中將所述閃光集中性地照射至形成於所述支撐體上的所述聚醯亞胺膜的端緣部。 [7] 如[5]或[6]所述的電子機器的製造方法,其中於俯視時,在與所述聚醯亞胺膜的端緣部對向的所述支撐體上設置吸收所述閃光的光吸收層。 [8] 如[5]至[7]中任一項所述的電子機器的製造方法,其選擇性地照射所述閃光的出射光中所述聚醯亞胺膜的光吸收率高的區域。 [9] 如[8]所述的電子機器的製造方法,其利用濾光器截止所述閃光的出射光中的所述聚醯亞胺膜的光吸收率低的區域。 [10] 如[8]或[9]所述的電子機器的製造方法,其中所述聚醯亞胺膜的光吸收率高的區域為紫外區域。 [11] 如[9]所述的電子機器的製造方法,其中所述濾光器截止400 nm以上的波長。 [12] 如[5]至[11]中任一項所述的電子機器的製造方法,其於步驟(c)之前更具備將形成有所述聚醯亞胺膜的所述支撐體的周圍的環境減壓的步驟(d), 於照射所述閃光時,使存在於所述聚醯亞胺膜與所述支撐體的界面的氣泡膨脹。 [13] 如[3]至[12]中任一項所述的電子機器的製造方法,其中所述元件為選自可撓性顯示器、可撓性元件、半導體元件、太陽電池及燃料電池所組成的組群中的至少一個。 [14] 一種塗膜的剝離方法,包括:步驟(a),將含有可溶性聚醯亞胺樹脂、熱硬化性的交聯材及溶劑的聚醯亞胺清漆塗佈於支撐體上,並於超過所述可溶性聚醯亞胺樹脂的玻璃轉移溫度且未滿熱硬化性的所述交聯材的交聯起始溫度的條件下進行乾燥而形成聚醯亞胺膜;以及步驟(b),將經由步驟(a)而得的所述聚醯亞胺膜於促進所述交聯材的交聯反應後自所述支撐體剝離。 [15] 如[14]所述的塗膜的剝離方法,其中於步驟(b)中,自所述支撐體側對所述聚醯亞胺膜照射閃光。 [發明的效果]As a result of repeated efforts by the inventors of the present invention, it has been found that the subject of the present invention can be solved in the following aspects, and the present invention has been completed. [1] A method for producing a polyimide film, comprising: step (a), applying a polyimide pigment varnish containing a soluble polyimide resin, a thermosetting crosslinked material, and a solvent to a support And drying to form a coating film under conditions of a crosslinking transition temperature of the crosslinked material exceeding the glass transition point of the soluble polyamidene resin and not being thermosetting; In the step (b), the polyimine film obtained through the step (a) is peeled off from the support after the crosslinking reaction of the crosslinked material is promoted. [2] The method for producing a polyimide film according to [1], wherein in the step (b), the polyimide film is irradiated with a flash from the support side. [3] A method of manufacturing an electronic device, comprising: forming a component on a base film, and having at least a polyimide film as the base film, the method of manufacturing the electronic device comprising: the step (a), containing a solubility A polyimide varnish of a polyimide resin, a thermosetting crosslinked material, and a solvent is applied to a support and exceeds a glass transition temperature of the soluble polyimide resin and is less than thermosetting. Drying to form a coating film under the condition of crosslinking initiation temperature of the crosslinked material; step (c), forming the element on the polyimide film obtained by the step (a); and b), the polyimine film obtained by the step (c) is peeled off from the support after promoting the crosslinking reaction of the crosslinked material. [4] The method of manufacturing an electronic device according to [3], wherein the step (c) comprises a film forming process using a vapor phase growth method. [5] The method of manufacturing an electronic device according to [3], wherein the step (b) irradiates the polyimide film with a flash from the support side. [6] The method of manufacturing an electronic device according to [5], wherein the flash is concentratedly irradiated onto an edge portion of the polyimide film formed on the support. [7] The method of manufacturing an electronic device according to [5], wherein, in a plan view, the absorption is provided on the support body opposed to an edge portion of the polyimide film. Flash light absorbing layer. [8] The method of manufacturing an electronic device according to any one of [5] to [7], which selectively irradiates an area of the light emitted from the flash that has a high light absorptivity of the polyimide film . [9] The method of manufacturing an electronic device according to [8], wherein a region in which the light absorption rate of the polyimide film of the flash light is cut off by the filter is low. [10] The method for producing an electronic device according to [8], wherein the region in which the light absorption rate of the polyimide film is high is an ultraviolet region. [11] The method of manufacturing an electronic device according to [9], wherein the filter cuts off a wavelength of 400 nm or more. [12] The method of manufacturing an electronic device according to any one of [5] to [11] further comprising, before the step (c), the periphery of the support body on which the polyimide film is formed In the step (d) of depressurizing the environment, when the flash is irradiated, the bubbles existing at the interface between the polyimide film and the support are expanded. [13] The method of manufacturing an electronic device according to any one of [3] to [12] wherein the element is selected from the group consisting of a flexible display, a flexible element, a semiconductor element, a solar cell, and a fuel cell. At least one of the group consisting of. [14] A method for peeling off a coating film, comprising: step (a), applying a polyimide varnish containing a soluble polyimide resin, a thermosetting crosslinked material, and a solvent to a support, and Drying to form a polyimine film under conditions of a glass transition temperature of the soluble polyimide resin and a crosslinking initiation temperature of the crosslinked material not being thermosetting; and step (b), The polyimine film obtained through the step (a) is peeled off from the support after promoting the crosslinking reaction of the crosslinked material. [15] The method for peeling off a coating film according to [14], wherein in the step (b), the polyimide film is irradiated with a flash from the support side. [Effects of the Invention]

根據本發明,起到如下優異的效果:可提供一種於剝離處理前與支撐體良好地接著、於剝離處理後可容易地與支撐體剝離且良率高的電子機器的製造方法及塗膜的剝離方法,以及可提供一種於所述基底膜的至少一層中使用的聚醯亞胺膜的製造方法。According to the present invention, it is possible to provide an electronic device manufacturing method and a coating film which are excellent in adhesion to the support before the peeling treatment, can be easily peeled off from the support after the peeling treatment, and have a high yield. A peeling method, and a method of producing a polyimide film for use in at least one layer of the base film.

[聚醯亞胺膜的製造方法]本發明的聚醯亞胺膜的製造方法至少具有以下的步驟( a)~步驟(b)。步驟( a)是將含有可溶性聚醯亞胺樹脂、熱硬化性的交聯材及溶劑的聚醯亞胺清漆塗佈於支撐體上, 並於超過可溶性聚醯亞胺樹脂的玻璃轉移溫度且未滿熱硬化性的交聯材的交聯起始溫度的條件下進行乾燥而形成塗膜的步驟。步驟( b)是將經由步驟( a)而得的所述聚醯亞胺膜於促進交聯材的交聯反應後自所述支撐體剝離的步驟。[Method for Producing Polyimine Film] The method for producing a polyimide film of the present invention has at least the following steps (a) to (b). Step (a) is a method in which a polyimide pigment varnish containing a soluble polyimide resin, a thermosetting crosslinked material, and a solvent is applied onto a support at a glass transition temperature exceeding the soluble polyimide resin. The step of drying to form a coating film under the condition of the crosslinking initiation temperature of the thermosetting crosslinked material. The step (b) is a step of peeling the polyimine film obtained by the step (a) from the support after promoting the crosslinking reaction of the crosslinked material.

步驟(a)中使用的聚醯亞胺清漆至少含有可溶性聚醯亞胺樹脂、熱硬化性的交聯材及溶劑。The polyimide varnish used in the step (a) contains at least a soluble polyimide resin, a thermosetting crosslinked material, and a solvent.

可溶性聚醯亞胺樹脂通常藉由使四甲酸二酐與二胺單體縮聚並進行醯亞胺化而獲得。只要具有溶劑可溶性,則聚醯亞胺樹脂的種類並無特別限定,自使對支撐體的接合性良好的觀點而言,較佳為熱塑性聚醯亞胺樹脂。The soluble polyimine resin is usually obtained by polycondensing tetracarboxylic dianhydride with a diamine monomer and performing hydrazine imidization. The type of the polyimine resin is not particularly limited as long as it is solvent-soluble, and a thermoplastic polyimide resin is preferred from the viewpoint of good adhesion to the support.

若考慮膜化後的機械物性,則理想的是所使用的四甲酸二酐與二胺具有芳香族基。作為芳香族四甲酸二酐的例子,可列舉均苯四甲酸酐(1,2,4,5-苯四甲酸二酐)、3,3',4,4'-二苯基酮四甲酸二酐、3,3',4,4'-聯苯四甲酸二酐及3,3',4,4'-二苯醚四甲酸二酐等。而且,作為芳香族二胺的例子,可列舉4,4'-氧二胺基苯(4,4'-二胺基二苯醚)、1,3-雙-(3-胺基苯氧基)苯、4,4'-雙-(3-胺基苯氧基)聯苯、1,4-二胺基苯及1,3-二胺基苯。In consideration of mechanical properties after film formation, it is preferred that the tetracarboxylic dianhydride and the diamine used have an aromatic group. Examples of the aromatic tetracarboxylic dianhydride include pyromellitic anhydride (1,2,4,5-benzenetetracarboxylic dianhydride) and 3,3',4,4'-diphenylketonetetracarboxylic acid II. Anhydride, 3,3',4,4'-biphenyltetracarboxylic dianhydride and 3,3',4,4'-diphenyl ether tetracarboxylic dianhydride. Further, examples of the aromatic diamine include 4,4'-oxydiaminobenzene (4,4'-diaminodiphenyl ether) and 1,3-bis-(3-aminophenoxyl). Benzene, 4,4'-bis-(3-aminophenoxy)biphenyl, 1,4-diaminobenzene, and 1,3-diaminobenzene.

藉由使用可溶性聚醯亞胺樹脂,不需要用以進行醯亞胺化的加熱步驟。即,將於溶劑中含有可溶的聚醯亞胺的聚醯亞胺清漆塗佈於支撐體上後進行乾燥便可形成聚醯亞胺膜。因此,不需要利用高溫使塗膜醯亞胺化的階段(step),於後述的步驟(b)的剝離處理前加溫至未滿交聯材的交聯起始溫度的情況於製程上變得容易,能夠增加可適用的交聯材的選擇項。再者,於本發明的聚醯亞胺膜的製造方法中,亦可代替聚醯亞胺清漆而使用作為聚醯亞胺前驅物的聚醯胺酸清漆,或者於聚醯亞胺清漆中摻合聚醯胺酸,但為了將聚醯胺酸塗膜醯亞胺化,通常需要進行300℃~350℃的加熱,因此幾乎均為一般的交聯材的交聯起始溫度以上的情況。而且,亦可為了於低溫下實施醯亞胺化而添加觸媒,但有促進交聯材的硬化、或觸媒使作為聚醯亞胺膜的物性劣化之虞。因此,於本發明的製造方法中,理想的是使用溶解於溶劑中的聚醯亞胺清漆。By using a soluble polyimine resin, a heating step for carrying out the ruthenium is not required. That is, a polyimide pigment varnish containing a soluble polyimine in a solvent is applied onto a support and dried to form a polyimide film. Therefore, it is not necessary to use a high temperature to imidize the coating film, and the temperature is increased to the process of the crosslinking initiation temperature of the crosslinked material before the peeling treatment of the step (b) described later. It is easy to increase the choice of applicable cross-linking materials. Further, in the method for producing a polyimide film of the present invention, a polyamic acid varnish which is a polyimide precursor may be used instead of the polyimide pigment varnish, or may be incorporated in a polyimide pigment varnish. The lysine is agglomerated, but in order to imidize the poly phthalic acid coating film, it is usually necessary to carry out heating at 300 ° C to 350 ° C, so that it is almost always at a crosslinking initiation temperature of a general crosslinked material. Further, in order to carry out the ruthenium imidization at a low temperature, a catalyst may be added, but the curing of the crosslinked material may be promoted or the catalyst may deteriorate the physical properties of the polyimide film. Therefore, in the production method of the present invention, it is desirable to use a polyimide varnish dissolved in a solvent.

交聯材使用在規定的溫度下開始進行交聯反應的熱硬化性的交聯材。關於交聯材的交聯起始溫度,使用該溫度高於所使用的聚醯亞胺樹脂的玻璃轉移溫度、且低於所使用的支撐體的耐熱性溫度者。As the crosslinked material, a thermosetting crosslinked material which starts a crosslinking reaction at a predetermined temperature is used. Regarding the crosslinking initiation temperature of the crosslinked material, the temperature is higher than the glass transition temperature of the polyimide film to be used and lower than the heat resistance temperature of the support to be used.

交聯材只要為可藉由交聯反應促使支撐體與聚醯亞胺膜的剝離者即可,對化合物或添加量並無限定。交聯劑的添加量例如為5質量%~25質量%,且交聯材的較佳交聯起始溫度為150℃~400℃,更佳為200℃以上、350℃以下。藉由設為200℃以上,可提高製程穩定性,從而可提高製造良率。而且,藉由設為350℃以下,可防止聚醯亞胺膜或形成於聚醯亞胺膜上的其他構件因加熱而劣化。The cross-linking material may be one in which the support and the polyimide film can be peeled off by the crosslinking reaction, and the compound or the amount of addition is not limited. The amount of the crosslinking agent to be added is, for example, 5% by mass to 25% by mass, and the crosslinking crosslinking starting temperature of the crosslinked material is preferably from 150 ° C to 400 ° C, more preferably from 200 ° C to 350 ° C. By setting it to 200 ° C or more, the process stability can be improved, and the manufacturing yield can be improved. Further, by setting it to 350 ° C or lower, it is possible to prevent the polyimide film or other member formed on the polyimide film from being deteriorated by heating.

交聯材的種類在與本發明的主旨一致的限度內並無限定,可例示雙馬來亞醯胺化合物、雙納迪克醯亞胺化合物、末端雙乙炔化合物等。The type of the cross-linked material is not limited as long as it is in accordance with the gist of the present invention, and examples thereof include a bismaleimide compound, a double nadic quinone compound, a terminal diacetylene compound, and the like.

關於溶劑,只要為製成清漆時可溶性聚醯亞胺樹脂可溶解的溶劑即可,並無特別限定。例如,即便為單獨使用時不溶解聚醯亞胺樹脂的溶劑,但若與其他溶劑併用時聚醯亞胺樹脂可溶解則亦可使用。溶劑可單獨使用或併用。The solvent is not particularly limited as long as it is a solvent in which the soluble polyimide resin is soluble when the varnish is formed. For example, even if it is a solvent which does not dissolve the polyimine resin when it is used alone, it can also be used if it can be dissolved when it is used together with another solvent. The solvent may be used singly or in combination.

支撐體於不脫離本發明的主旨的限度內並無限定,作為較佳例,可例示玻璃基板(石英基板等)、藍寶石基板、矽基板、碳化矽基板等。於支撐體的正上方形成聚醯亞胺膜。The support is not limited as long as it does not deviate from the gist of the present invention, and a glass substrate (such as a quartz substrate), a sapphire substrate, a tantalum substrate, a tantalum carbide substrate, or the like can be exemplified as a preferred example. A polyimide film is formed directly above the support.

塗敷聚醯亞胺清漆的步驟例如可例示噴霧塗佈、刷塗、浸漬塗佈、模塗、簾幕塗佈、流塗、旋轉塗佈、網版印刷等溶液製膜法。塗佈後,藉由進行乾燥而獲得聚醯亞胺膜。膜厚可根據用途適宜設計,例如為5 μm~100 μm左右。塗佈後的乾燥溫度需設為超過可溶性聚醯亞胺樹脂的玻璃轉移溫度且未滿交聯材的交聯起始溫度。自製程穩定性的觀點而言,塗佈後的乾燥溫度較佳為較交聯起始溫度低20℃以上。The step of applying the polyimide varnish may, for example, be a solution film forming method such as spray coating, brush coating, dip coating, die coating, curtain coating, flow coating, spin coating, or screen printing. After coating, a polyimide film was obtained by drying. The film thickness can be appropriately designed according to the use, and is, for example, about 5 μm to 100 μm. The drying temperature after coating is set to exceed the glass transition temperature of the soluble polyimide resin and is less than the crosslinking initiation temperature of the crosslinked material. From the viewpoint of self-manufacturing stability, the drying temperature after coating is preferably 20 ° C or more lower than the crosslinking initiation temperature.

聚醯亞胺膜可為單層,亦可由多層形成。而且,亦可為於聚醯亞胺膜層的上層積層包含其他樹脂的層、金屬層、金屬氧化物層等而成的積層體。The polyimide film may be a single layer or may be formed of a plurality of layers. Further, it may be a laminate including a layer of another resin, a metal layer, a metal oxide layer, or the like in the upper layer of the polyimide film layer.

步驟(b)藉由促進交聯材的交聯反應而減弱支撐體與聚醯亞胺膜的接著力。交聯材的交聯反應可藉由成為交聯材的交聯起始溫度以上來實現。接著力變弱的聚醯亞胺膜與支撐體可藉由公知的方法容易地剝離。步驟(b)的手段於不脫離本發明的主旨的範圍內並無限定,作為促進交聯劑的交聯反應的方法,較佳為自支撐體側對所述聚醯亞胺膜照射閃光的方法。閃光的照射方法並未特別限定,例如可使用閃光燈來形成。另外,於照射閃光時進行加熱亦有效。關於步驟(b)的詳細製程將於之後敍述。Step (b) weakens the adhesion of the support to the polyimide film by promoting the crosslinking reaction of the crosslinked material. The crosslinking reaction of the crosslinked material can be achieved by setting the crosslinking initiation temperature of the crosslinked material or more. Then, the polyimide film and the support which are weakened by force can be easily peeled off by a known method. The means of the step (b) is not limited as long as it does not deviate from the gist of the present invention. As a method of promoting the crosslinking reaction of the crosslinking agent, it is preferred that the polyimide film is irradiated with a flash from the side of the support. method. The method of irradiating the flash is not particularly limited, and for example, it can be formed using a flash lamp. In addition, it is also effective to perform heating when irradiated with a flash. The detailed process for step (b) will be described later.

[電子機器的製造方法] 接著,對使用本發明的聚醯亞胺膜的製造方法的電子機器的製造方法的實施形態的一例加以說明。 本發明的電子機器的製造方法包括於作為基底膜的聚醯亞胺膜上形成元件的步驟,且除所述步驟(a)、步驟(b)以外,亦至少具有步驟(c)。步驟(c)於步驟(b)之前進行,且為於聚醯亞胺膜上形成元件的步驟。元件的種類並無特別限定,可例示可撓性顯示器、可撓性元件、半導體元件、太陽電池及燃料電池等。[Manufacturing Method of Electronic Apparatus] Next, an example of an embodiment of a method of manufacturing an electronic apparatus using the method for producing a polyimide film of the present invention will be described. The method for producing an electronic device of the present invention comprises the step of forming an element on a polyimide film as a base film, and further has at least step (c) in addition to the steps (a) and (b). Step (c) is carried out before step (b) and is a step of forming an element on the polyimide film. The type of the element is not particularly limited, and examples thereof include a flexible display, a flexible element, a semiconductor element, a solar cell, and a fuel cell.

聚醯亞胺膜作為用以供元件形成的基底膜發揮功能。聚醯亞胺膜可使用僅包含藉由步驟(a)形成的聚醯亞胺膜的層,或者包含在藉由步驟(a)形成的聚醯亞胺膜上積層其他的層而成的積層膜的層。聚醯亞胺膜必需可耐受形成元件時的製程溫度的耐熱性。通常,將元件安裝於基底膜時,製程溫度大多為300℃以上,因此,所使用的聚醯亞胺樹脂較佳為耐熱性優異者。就所述觀點而言,較佳為使用自芳香族二胺與芳香族四甲酸二酐中衍生出的聚醯亞胺樹脂。The polyimide film functions as a base film for forming an element. As the polyimide film, a layer containing only the polyimide film formed by the step (a) or a layer comprising another layer laminated on the polyimide film formed by the step (a) may be used. The layer of the film. The polyimide film must be resistant to heat resistance at the process temperature at which the element is formed. In general, when the element is mounted on the base film, the process temperature is usually 300 ° C or more. Therefore, the polyimide resin to be used is preferably excellent in heat resistance. From the above viewpoint, it is preferred to use a polyimide resin derived from an aromatic diamine and an aromatic tetracarboxylic dianhydride.

步驟(c)為藉由公知的方法將元件安裝於支撐體上所形成的聚醯亞胺膜的步驟。例如,可包括薄膜形成製程,所述薄膜形成製程使用氣相成長法或溶液塗佈法等,於基底膜上以所需的順序積層半導體層、金屬層、絕緣層等而形成元件。而且,亦可直接安裝已作成的元件。The step (c) is a step of attaching a component to a polyimide film formed on a support by a known method. For example, a film forming process may be included, in which a semiconductor layer, a metal layer, an insulating layer, or the like is laminated on a base film in a desired order using a vapor phase growth method or a solution coating method or the like to form an element. Moreover, it is also possible to directly mount the components that have been created.

步驟(b)可為如上所述的各種方法,此處,對藉由自玻璃基板側對聚醯亞胺膜照射閃光來進行的方法加以說明(照射步驟)。若照射閃光,則因玻璃基板與聚醯亞胺膜的光吸收率或線膨脹係數的不同,昇溫的程度或加熱所引起的伸長率會產生差異,而於玻璃基板與聚醯亞胺膜的界面產生與該界面平行的方向上的剪切應力。而且,於聚醯亞胺膜中含有未反應的交聯材,藉由照射閃光,該些交聯材迅速昇溫至高出交聯起始溫度的溫度而急遽進行交聯反應。藉由該些剪切應力,界面的接著力(結合力)降低。其結果,於閃光的照射後,聚醯亞胺膜可容易地自玻璃基板剝離。The step (b) may be various methods as described above, and a method of irradiating the polyimide film with a flash from the glass substrate side will be described (irradiation step). When the flash is irradiated, the degree of temperature rise or the elongation due to heating may differ due to the difference in light absorptivity or linear expansion coefficient between the glass substrate and the polyimide film, and on the glass substrate and the polyimide film. The interface produces shear stress in a direction parallel to the interface. Further, in the polyimide film, the unreacted crosslinked material is contained, and by the irradiation of the flash, the crosslinked materials are rapidly heated to a temperature higher than the crosslinking initiation temperature, and the crosslinking reaction is rapidly performed. By these shear stresses, the bonding force (bonding force) of the interface is lowered. As a result, the polyimide film can be easily peeled off from the glass substrate after the irradiation of the flash.

於照射步驟後,將與玻璃基板的接著力已降低的聚醯亞胺膜自玻璃基板剝離(剝離步驟)。作為自玻璃基板剝離聚醯亞胺膜的方法,可採用各種公知技術。以下,對關於步驟(b)的更具體的實施形態的一例加以說明。After the irradiation step, the polyimide film having a reduced adhesion to the glass substrate is peeled off from the glass substrate (peeling step). As a method of peeling a polyimide film from a glass substrate, various well-known techniques can be employ|adopted. Hereinafter, an example of a more specific embodiment of the step (b) will be described.

[第1實施形態] (閃光燈退火裝置的構成) 於圖1示出第1實施形態中使用的閃光燈退火裝置的示意構成圖。閃光燈退火裝置1是藉由對在玻璃基板上形成了聚醯亞胺膜的被處理體8照射閃光而輔助聚醯亞胺膜的剝離的裝置。作為主要要素,閃光燈退火裝置1具備收容被處理體8的腔室10、保持被處理體8的保持板20、以及對被處理體8照射閃光的閃光光源70。而且,閃光燈退火裝置1具備控制部3,所述控制部3控制設置於裝置中的各種運作機構來進行處理。再者,於圖1及以後的各圖中,為了容易理解,視需要誇大或簡化各部的尺寸或者數量來描繪。[First Embodiment] (Configuration of Flash Lamp Annealing Apparatus) Fig. 1 is a view showing a schematic configuration of a flash lamp annealing apparatus used in the first embodiment. The flash lamp annealing apparatus 1 is a device for assisting the peeling of the polyimide film by irradiating a target object 8 having a polyimide film formed on a glass substrate with a flash. As a main element, the flash lamp annealing apparatus 1 includes a chamber 10 that houses the object to be processed 8, a holding plate 20 that holds the object to be processed 8, and a flash light source 70 that illuminates the object to be processed 8. Further, the flash lamp annealing apparatus 1 includes a control unit 3 that controls various operation mechanisms provided in the apparatus to perform processing. Furthermore, in each of FIG. 1 and subsequent figures, in order to facilitate understanding, it is necessary to exaggerate or simplify the size or number of each part to draw.

腔室10設置於閃光光源70的下方,包括腔室側壁11及腔室底部12。腔室底部12覆蓋腔室側壁11的下部。將由腔室側壁11及腔室底部12圍成的空間定義為處理空間15。而且,於腔室10的上部開口裝設腔室窗18來將其封堵。The chamber 10 is disposed below the flash light source 70 and includes a chamber sidewall 11 and a chamber bottom portion 12. The chamber bottom 12 covers the lower portion of the chamber sidewall 11. A space surrounded by the chamber side wall 11 and the chamber bottom portion 12 is defined as a processing space 15. Further, a chamber window 18 is provided in the upper opening of the chamber 10 to block it.

構成腔室10的頂部的腔室窗18為包含石英的板狀構件,且作為使自閃光光源70照射的光透過至處理空間15的石英窗發揮功能。構成腔室10的本體的腔室側壁11及腔室底部12包含例如不鏽鋼等強度與耐熱性優異的金屬材料。The chamber window 18 constituting the top of the chamber 10 is a plate-like member including quartz, and functions as a quartz window that transmits light irradiated from the flash light source 70 to the processing space 15. The chamber side wall 11 and the chamber bottom portion 12 constituting the body of the chamber 10 contain a metal material excellent in strength and heat resistance such as stainless steel.

為了維持處理空間15的氣密性,腔室窗18與腔室側壁11經省略圖示的O形環密封。即,於腔室窗18的下表面周緣部與腔室側壁11之間夾入O形環,以防止氣體自該些間隙流出、流入。In order to maintain the airtightness of the processing space 15, the chamber window 18 and the chamber side wall 11 are sealed by an O-ring (not shown). That is, an O-ring is interposed between the peripheral edge portion of the lower surface of the chamber window 18 and the chamber side wall 11 to prevent gas from flowing out and flowing from the gaps.

於腔室10的內部設置有保持板20。保持板20為金屬製(例如為鋁製)的平坦的板狀構件。於保持板20的上表面設置有多個支撐銷22。保持板20於腔室10內利用多個支撐銷22支撐被處理體8,且將被處理體8保持為大致水平姿勢。支撐銷22亦可設為能夠藉由省略圖示的昇降驅動機構(例如氣缸等)進行昇降。A holding plate 20 is provided inside the chamber 10. The holding plate 20 is a flat plate-shaped member made of metal (for example, made of aluminum). A plurality of support pins 22 are provided on the upper surface of the holding plate 20. The holding plate 20 supports the object to be processed 8 in the chamber 10 by a plurality of support pins 22, and holds the object to be processed 8 in a substantially horizontal posture. The support pin 22 can also be lifted and lowered by a lifting drive mechanism (for example, an air cylinder or the like) (not shown).

而且,保持板20中內置加熱器21。加熱器21包括鎳鉻合金線(nichrome wire)等電阻加熱線,受到來自圖示外部的供電源的供電而發熱,並對保持板20進行加熱。再者,於保持板20中,除了加熱器21以外,亦可設置水冷管等冷卻機構。Further, the heater 21 is built in the holding plate 20. The heater 21 includes a resistance heating wire such as a nichrome wire, generates heat by power supply from a power supply external to the drawing, and heats the holding plate 20. Further, in the holding plate 20, in addition to the heater 21, a cooling mechanism such as a water-cooled tube may be provided.

於保持板20中設置有使用熱電耦而構成的且省略圖示的溫度感測器。溫度感測器對保持板20的上表面附近的溫度進行測定,並將其測定結果傳達至控制部3。控制部3基於溫度感測器的測定結果控制加熱器21的輸出,以使保持板20成為規定的溫度。保持板20所保持的被處理體8利用保持板20的加熱器21被加熱至規定的溫度。A temperature sensor configured using a thermocouple and not shown is provided in the holding plate 20. The temperature sensor measures the temperature in the vicinity of the upper surface of the holding plate 20, and transmits the measurement result to the control unit 3. The control unit 3 controls the output of the heater 21 based on the measurement result of the temperature sensor so that the holding plate 20 has a predetermined temperature. The object to be processed 8 held by the holding plate 20 is heated to a predetermined temperature by the heater 21 of the holding plate 20.

而且,閃光燈退火裝置1具備對腔室10內的處理空間15供給處理氣體的供氣機構40、及自處理空間15進行環境氣體的排出的排氣機構50。供氣機構40具備處理氣體供給源41、供給配管42及供給閥43。供給配管42的前端側連通至腔室10內的處理空間15而連接,基端側連接至處理氣體供給源41。於供給配管42的路徑中途設置供給閥43。藉由打開供給閥43而自處理氣體供給源41對處理空間15供給處理氣體。處理氣體供給源41可供給與被處理體8的種類或處理目的相對應的適宜的處理氣體,於第1實施形態中供給氮氣(N2 )。Further, the flash lamp annealing apparatus 1 includes an air supply mechanism 40 that supplies a processing gas to the processing space 15 in the chamber 10, and an exhaust mechanism 50 that discharges the ambient gas from the processing space 15. The air supply mechanism 40 includes a processing gas supply source 41, a supply pipe 42, and a supply valve 43. The front end side of the supply pipe 42 is connected to the processing space 15 in the chamber 10 to be connected, and the base end side is connected to the processing gas supply source 41. The supply valve 43 is provided in the middle of the path of the supply pipe 42. The processing gas is supplied from the processing gas supply source 41 to the processing space 15 by opening the supply valve 43. The processing gas supply source 41 can supply a suitable processing gas corresponding to the type of the object to be processed 8 or the processing purpose, and in the first embodiment, nitrogen gas (N 2 ) is supplied.

排氣機構50具備排氣裝置51、排氣配管52及排氣閥53。排氣配管52的前端側連通至腔室10內的處理空間15而連接,基端側連接至排氣裝置51。於排氣配管52的路徑中途設置排氣閥53。排氣裝置51例如具備乾式泵(dry pump)與節流閥(throttle valve)。藉由使排氣裝置51工作,同時打開排氣閥53,可將處理空間15的環境排出至裝置外。利用該些供氣機構40及排氣機構50,可調整處理空間15的環境。而且,因處理空間15為密閉空間,故若不自供氣機構40進行處理氣體的供給而利用排氣機構50進行環境排出,則可將處理空間15內的環境減壓至未滿大氣壓為止。The exhaust mechanism 50 includes an exhaust device 51, an exhaust pipe 52, and an exhaust valve 53. The front end side of the exhaust pipe 52 is connected to the processing space 15 in the chamber 10, and the base end side is connected to the exhaust device 51. An exhaust valve 53 is provided in the middle of the path of the exhaust pipe 52. The exhaust device 51 includes, for example, a dry pump and a throttle valve. By operating the exhaust device 51 while opening the exhaust valve 53, the environment of the processing space 15 can be discharged to the outside of the device. The environment of the processing space 15 can be adjusted by the air supply mechanism 40 and the exhaust mechanism 50. Further, since the processing space 15 is a sealed space, if the supply of the processing gas is not performed from the air supply mechanism 40 and the environment is discharged by the exhaust mechanism 50, the environment in the processing space 15 can be depressurized to less than atmospheric pressure.

閃光光源70設置於腔室10的上方。閃光光源70具備多根(圖1中為了便於圖示而設為11根,但並不限定於此)閃光燈FL、以及以覆蓋所述閃光燈FL全體的上方的方式設置的反射器72。閃光光源70自閃光燈FL,經由石英的腔室窗18對腔室10內保持板20所保持的被處理體8照射閃光。The flash light source 70 is disposed above the chamber 10. The flash light source 70 is provided in plurality (one in FIG. 1 for convenience of illustration, but is not limited thereto), and a flasher FL and a reflector 72 provided to cover the entire upper portion of the flasher FL. The flash light source 70 illuminates the object to be processed 8 held by the holding plate 20 in the chamber 10 from the flash lamp FL via the chamber window 18 of the quartz.

多個閃光燈FL分別為具有長條的圓筒形狀的棒狀燈,且以各個的長度方向沿水平方向彼此平行的方式排列為平面狀。於第1實施形態中,作為閃光燈FL而使用氙閃光燈。氙閃光燈FL具備棒狀的玻璃管(放電管)與觸發電極,所述棒狀的玻璃管(放電管)於其內部封入有氙氣,其兩端部配設有連接至電容器的陽極及陰極,所述觸發電極附設於所述玻璃管的外周面上。氙氣為電性絕緣體,因此即便於電容器中蓄積有電荷,於通常的狀態下電亦不會流至玻璃管內。然而,當對觸發電極施加高電壓而將絕緣擊穿時,儲存於電容器中的電藉由兩端電極間的放電而瞬間流至玻璃管內,藉由此時的氙的原子或分子的激勵而放出光。於此種氙閃光燈FL中,預先儲存於電容器中的靜電能量轉換為例如為0.05毫秒~100毫秒的極短的光脈衝,因此與連續點燈的燈相比,具有可照射極強的光的特徵。Each of the plurality of flash lamps FL is a rod-shaped lamp having a long cylindrical shape, and is arranged in a planar shape so that each longitudinal direction thereof is parallel to each other in the horizontal direction. In the first embodiment, a xenon flash lamp is used as the flash lamp FL. The xenon flash lamp FL includes a rod-shaped glass tube (discharge tube) and a trigger electrode, and the rod-shaped glass tube (discharge tube) is sealed with helium gas at its inner portion, and an anode and a cathode connected to the capacitor are disposed at both ends thereof. The trigger electrode is attached to an outer peripheral surface of the glass tube. Since helium gas is an electrical insulator, even if electric charge is accumulated in a capacitor, electricity does not flow into a glass tube in a normal state. However, when a high voltage is applied to the trigger electrode to break the insulation, the electricity stored in the capacitor instantaneously flows into the glass tube by the discharge between the electrodes at both ends, thereby exciting the atom or molecule of the germanium. And let out the light. In such a xenon flash lamp FL, the electrostatic energy stored in the capacitor in advance is converted into an extremely short light pulse of, for example, 0.05 millisecond to 100 milliseconds, and thus has a light that can be irradiated with extremely strong light as compared with a lamp that is continuously lit. feature.

而且,反射器72以於多個閃光燈FL的上方覆蓋該等的全體的方式設置。反射器72的基本功能為將自多個閃光燈FL出射的閃光反射至處理空間15側。Further, the reflector 72 is provided to cover the entirety of the plurality of flashers FL. The basic function of the reflector 72 is to reflect the flash light emitted from the plurality of flash lamps FL to the processing space 15 side.

控制部3對設置於閃光燈退火裝置1的所述各種運作機構進行控制。控制部3的硬體的構成與一般的電腦相同。即,控制部3包括進行各種演算處理的中央處理單元(central processing unit,CPU),作為記憶基本程式的讀出專用記憶體的唯讀記憶體(read only memory,ROM),作為記憶各種資訊的讀寫自如的記憶體的隨機存取記憶體(random access memory,RAM),以及記憶有控制用軟體或資料等的磁碟。藉由控制部3的CPU執行規定的處理程式來進行閃光燈退火裝置1的處理。The control unit 3 controls the various operating mechanisms provided in the flash lamp annealing apparatus 1. The hardware of the control unit 3 has the same configuration as a general computer. In other words, the control unit 3 includes a central processing unit (CPU) that performs various kinds of arithmetic processing, and reads only memory (ROM) as a read-only memory for storing the basic program, as a memory for storing various kinds of information. A random access memory (RAM) that reads and writes freely, and a disk that stores software or data for control. The processing of the flash lamp annealing apparatus 1 is performed by the CPU of the control unit 3 executing a predetermined processing program.

除所述構成以外,亦於閃光燈退火裝置1中適當設置各種構成要素。例如,於腔室側壁11,以相應的形狀設置有用以搬入、搬出被處理體8的搬送開口部。而且,為了防止來自閃光燈FL的光照射所引起的過剩的溫度上昇,亦可於腔室側壁11設置水冷管。另外,於閃光燈退火裝置1中設置有測定腔室10內的氣壓的壓力計。In addition to the above configuration, various components are also appropriately provided in the flash lamp annealing apparatus 1. For example, in the chamber side wall 11, a conveying opening portion for carrying in and carrying out the workpiece 8 is provided in a corresponding shape. Further, in order to prevent an excessive temperature rise caused by light irradiation from the flash lamp FL, a water-cooling tube may be provided in the chamber side wall 11. Further, a pressure gauge for measuring the air pressure in the chamber 10 is provided in the flash lamp annealing apparatus 1.

(使用閃光燈退火裝置的聚醯亞胺膜的處理方法) 接著,對具有所述構成的閃光燈退火裝置1的處理順序加以說明。圖2為表示閃光燈退火裝置1的處理順序的流程圖。以下所說明的閃光燈退火裝置1的各處理步驟是藉由控制部3控制閃光燈退火裝置1的各運作機構來進行。(Processing Method of Polyimine Film Using Flash Annealing Apparatus) Next, the processing procedure of the flash lamp annealing apparatus 1 having the above configuration will be described. FIG. 2 is a flow chart showing the processing procedure of the flash lamp annealing apparatus 1. The respective processing steps of the flash annealing apparatus 1 described below are performed by the control unit 3 controlling the respective operating mechanisms of the flash annealing apparatus 1.

首先,進行將被處理體8搬入腔室10內的搬入步驟(階段S1)。被處理體8的搬入可藉由閃光燈退火裝置1外部的搬送機器人進行,亦可藉由手動進行。圖3為表示被處理體8的結構的剖面圖。第1實施形態的被處理體8是於玻璃基板81的上表面貼附聚醯亞胺膜82而構成。作為玻璃基板81的材質,例如使用石英玻璃。作為石英玻璃的玻璃基板81遍及大致全波長區域而透過自閃光燈FL射出的閃光。對於被處理體8,可根據欲照射的波長區域來選擇恰當的支撐體。聚醯亞胺膜82藉由上文所述的作為基底樹脂膜發揮功能的聚醯亞胺膜的形成方法而形成為塗膜狀。而且,於聚醯亞胺膜82的上表面藉由公知的方法安裝有元件83。First, a loading step (stage S1) of carrying the workpiece 8 into the chamber 10 is performed. The loading of the object to be processed 8 can be performed by a transfer robot outside the flash lamp annealing apparatus 1, or can be performed manually. FIG. 3 is a cross-sectional view showing the structure of the object to be processed 8. The object to be processed 8 of the first embodiment is configured by attaching a polyimide film 82 to the upper surface of the glass substrate 81. As a material of the glass substrate 81, quartz glass is used, for example. The glass substrate 81 as quartz glass transmits the flash light emitted from the flash lamp FL over substantially the entire wavelength region. For the object to be processed 8, an appropriate support can be selected in accordance with the wavelength region to be irradiated. The polyimide film 82 is formed into a coating film shape by a method of forming a polyimide film which functions as a base resin film as described above. Further, an element 83 is attached to the upper surface of the polyimide film 82 by a known method.

聚醯亞胺膜82的塗佈形成及元件83的安裝是利用與閃光燈退火裝置1不同的設備進行。於作為剛性基板(亦稱為載體基板、或虛設基板(dummy substrate))的玻璃基板81上貼附聚醯亞胺膜82,進而於其上安裝元件83,因此可沿用大部分現有的設備進行元件的安裝。然後,於安裝元件83後,如圖3般的被處理體8被搬入腔室10內。The coating formation of the polyimide film 82 and the mounting of the element 83 are performed by using a device different from the flash lamp annealing apparatus 1. The polyimide film 82 is attached to the glass substrate 81 as a rigid substrate (also referred to as a carrier substrate or a dummy substrate), and the component 83 is mounted thereon, so that most of the existing equipment can be used. Component installation. Then, after the component 83 is mounted, the object to be processed 8 as shown in FIG. 3 is carried into the chamber 10.

接著,進行將搬入腔室10內的被處理體8經由支撐銷22而載置於保持板20並加以保持的保持步驟(階段S2)。此處,被處理體8使形成有元件83之側的面朝向下側,即,使玻璃基板81朝向上側而被保持於保持板20。而且,被處理體8利用多個支撐銷22以點接觸受到支撐,並被保持於保持板20。多個支撐銷22較佳為支撐玻璃基板81的未安裝元件83的端緣部。Next, a holding step (stage S2) in which the object to be processed 8 carried into the chamber 10 is placed on the holding plate 20 via the support pin 22 and held is carried out. Here, the object to be processed 8 faces the lower side of the surface on which the element 83 is formed, that is, the glass substrate 81 is held by the holding plate 20 toward the upper side. Further, the object to be processed 8 is supported by the plurality of support pins 22 in point contact, and is held by the holding plate 20. The plurality of support pins 22 preferably support end edges of the unmounted member 83 of the glass substrate 81.

保持板20藉由內置的加熱器21被加熱至預先規定的溫度。保持板20的溫度由控制部3控制。被處理體8利用多個支撐銷22近接支撐於保持板20,藉此,包含安裝有元件83的聚醯亞胺膜82的被處理體8整體受到加熱。對被處理體8進行加熱的溫度可於不對元件83造成熱損傷的範圍、即超過可溶性聚醯亞胺樹脂的玻璃轉移溫度且未滿交聯材的交聯溫度的範圍內適宜地設定。為了提高此時的加熱效率,較佳為由多個支撐銷22支撐的被處理體8的高度位置靠近保持板20的上表面。The holding plate 20 is heated to a predetermined temperature by the built-in heater 21. The temperature of the holding plate 20 is controlled by the control unit 3. The object to be processed 8 is closely supported by the holding plate 20 by a plurality of support pins 22, whereby the object to be processed 8 including the polyimide film 82 to which the element 83 is attached is heated as a whole. The temperature at which the object to be processed 8 is heated can be appropriately set within a range that does not cause thermal damage to the element 83, that is, a range exceeding the glass transition temperature of the soluble polyimide resin and the crosslinking temperature of the crosslinked material. In order to improve the heating efficiency at this time, it is preferable that the height of the object to be processed 8 supported by the plurality of support pins 22 is close to the upper surface of the holding plate 20.

而且,於將被處理體8搬入腔室10內且將處理空間15設為密閉空間後,進行將腔室10內減壓的減壓步驟(階段S3)。即,藉由不進行自供氣機構40的供氣而利用排氣機構50進行排氣,腔室10內的處理空間15的環境被減壓至未滿大氣壓。此時,若需要使腔室10內的氧分壓進一步降低,則亦可自供氣機構40供給氮氣而將處理空間15置換為氮環境,然後將腔室10內減壓。Then, after the object to be processed 8 is carried into the chamber 10 and the processing space 15 is used as a sealed space, a pressure reduction step (step S3) for decompressing the inside of the chamber 10 is performed. That is, the exhaust gas is exhausted by the exhaust mechanism 50 without supplying air from the air supply mechanism 40, and the environment of the processing space 15 in the chamber 10 is depressurized to less than atmospheric pressure. At this time, if it is necessary to further reduce the partial pressure of oxygen in the chamber 10, nitrogen gas may be supplied from the gas supply mechanism 40 to replace the treatment space 15 with a nitrogen atmosphere, and then the inside of the chamber 10 may be decompressed.

於保持板20所保持的被處理體8被加熱而達到規定的溫度且腔室10內被減壓至未滿大氣壓為止後,藉由控制部3的控制進行使閃光光源70的多個閃光燈FL同時點燈的照射步驟(階段S4)。自閃光燈FL出射的閃光(包括被反射器72反射的閃光)透過腔室窗18並朝向處理空間15中保持板20所保持的被處理體8。自閃光燈FL出射的閃光較佳為預先儲存的靜電能量轉換為極短的光脈衝的、照射時間(脈寬)為0.05毫秒以上、100毫秒以下程度的極短的強閃光(照射能量為10 J/cm2 以上、20 J/cm2 以下的程度)。然而,關於本發明的實施並不限定於此,只要為於玻璃基板與聚醯亞胺膜的界面,界面的接著力足以充分降低的條件,則並不限定於所述範圍。而且,閃光的照射次數亦可僅為一次,亦可多次照射。After the object 8 to be held held by the holding plate 20 is heated to a predetermined temperature and the inside of the chamber 10 is decompressed to a temperature less than atmospheric pressure, the plurality of flash lamps FL of the flash light source 70 are controlled by the control unit 3. At the same time, the illumination step of lighting (stage S4). The flash emitted from the flash lamp FL (including the flash reflected by the reflector 72) passes through the chamber window 18 and holds the processed body 8 held by the panel 20 toward the processing space 15. The flash emitted from the flash lamp FL is preferably a very short strong flash (the irradiation energy is 10 J) in which the irradiation time (pulse width) of the pre-stored electrostatic energy is converted into an extremely short light pulse of 0.05 msec or more and 100 msec or less. /cm 2 or more and 20 J/cm 2 or less). However, the implementation of the present invention is not limited thereto, and is not limited to the above range as long as the bonding force of the interface is sufficiently reduced at the interface between the glass substrate and the polyimide film. Moreover, the number of times the flash is irradiated may be only one time or multiple times.

作為較佳的照射光能量存在下限的理由,可列舉無法對聚醯亞胺膜中的與玻璃基板的界面充分進行昇溫的方面。因此,只要於玻璃基板與聚醯亞胺膜的界面,界面的接著力足以充分降低,則亦可採用照射光能量低於10 J/cm2 的照射條件。The reason why the lower limit of the irradiation light energy is preferable is that the temperature at the interface with the glass substrate in the polyimide film cannot be sufficiently increased. Therefore, as long as the adhesion of the interface is sufficiently reduced at the interface between the glass substrate and the polyimide film, irradiation conditions in which the irradiation light energy is less than 10 J/cm 2 can be used.

作為較佳的照射光能量存在上限的理由,可列舉以下方面:若賦予該上限程度的能量,則於玻璃基板與聚醯亞胺膜的界面,界面的接著力足以充分降低,從而無須賦予該上限以上的能量;而且,藉由不賦予多餘的能量來抑制閃光燈的電力消耗的增加;並且,藉由不賦予多餘的能量來抑制對安裝於聚醯亞胺膜的元件的損傷等。因此,根據聚醯亞胺膜的膜厚或組成、形成基板的玻璃基板的特性等各種條件,當滿足所述方面的照射光能量高於20 J/cm2 時,亦可採用20 J/cm2 以上的照射光能量作為較佳的條件。The reason why the upper limit of the irradiation light energy is preferable is as follows. When the energy of the upper limit is applied, the adhesion at the interface between the glass substrate and the polyimide film is sufficiently reduced, so that it is not necessary to impart the The energy above the upper limit is increased, and the increase in power consumption of the flash lamp is suppressed by not giving extra energy; and damage to the element mounted on the polyimide film is suppressed by not giving unnecessary energy. Therefore, depending on various conditions such as the film thickness or composition of the polyimide film and the characteristics of the glass substrate on which the substrate is formed, when the irradiation light energy satisfying the above aspect is higher than 20 J/cm 2 , 20 J/cm may be used. 2 or more irradiation light energy is a preferable condition.

作為多次照射的優點,可列舉防止安裝於聚醯亞胺膜的元件、或聚醯亞胺膜自身的過熱所引起的損傷。若長時間照射閃光,則熱會到達深部,因此有元件或膜內部過熱之虞。於本發明中,為了使閃光的能量只到達聚醯亞胺膜與玻璃基板的界面即可,較佳為縮短脈寬。然而,於能量一定的狀態下,若縮短脈寬,則所賦予的能量減少,有無法使界面的接著力充分降低之虞。因此,藉由縮短脈寬且多次照射閃光,可充分保持所賦予的能量,使界面的接著力充分降低,且抑制熱到達元件等,從而可防止元件等的損傷。As an advantage of the multiple irradiation, the damage caused by the element which is attached to the polyimide film, or the superheat of the polyimide film itself is mentioned. If the flash is irradiated for a long time, the heat will reach the deep part, and there is a possibility that the inside of the element or the film is overheated. In the present invention, in order to allow the energy of the flash to reach only the interface between the polyimide film and the glass substrate, it is preferred to shorten the pulse width. However, when the pulse width is shortened in a state where the energy is constant, the energy to be applied is reduced, and there is a possibility that the adhesion force of the interface cannot be sufficiently lowered. Therefore, by shortening the pulse width and irradiating the flash light a plurality of times, the energy to be applied can be sufficiently maintained, the adhesion force of the interface can be sufficiently lowered, and the heat can be prevented from reaching the element or the like, thereby preventing damage of the element or the like.

圖4為表示對被處理體8照射了閃光的狀態的圖。於腔室10內,被處理體8使玻璃基板81朝向上側而被保持於保持板20。自被處理體8的上側、即玻璃基板81之側照射自設置於腔室10的上方的閃光燈FL出射的閃光。玻璃基板81透過自閃光燈FL出射的閃光。其結果,閃光透過上側的玻璃基板81並照射至玻璃基板81與聚醯亞胺膜82的界面。而且,於第1實施形態中,對被處理體8的整個面一體地照射閃光。FIG. 4 is a view showing a state in which the object to be processed 8 is irradiated with a flash. In the chamber 10, the object to be processed 8 holds the glass substrate 81 toward the upper side and is held by the holding plate 20. The flash emitted from the flasher FL provided above the chamber 10 is irradiated from the upper side of the object to be processed 8, that is, the side of the glass substrate 81. The glass substrate 81 passes through the flash light emitted from the flash lamp FL. As a result, the flash light is transmitted through the upper glass substrate 81 and is irradiated to the interface between the glass substrate 81 and the polyimide film 82. Further, in the first embodiment, the entire surface of the object to be processed 8 is integrally irradiated with a flash.

玻璃基板81與聚醯亞胺膜82的界面吸收閃光而急遽昇溫,其後迅速降溫。此時,玻璃基板81及聚醯亞胺膜82兩者的界面附近的區域昇溫。若為照射時間為0.05毫秒以上、100毫秒以下程度的極短的閃光照射,則可選擇性地僅使玻璃基板81與聚醯亞胺膜82的界面附近昇溫。因此,藉由閃光照射,可防止對形成於聚醯亞胺膜82上的元件83進行必要程度以上的加熱而造成熱損傷的情況。The interface between the glass substrate 81 and the polyimide film 82 absorbs the flash and rapidly rises, and then rapidly cools down. At this time, the region in the vicinity of the interface between the glass substrate 81 and the polyimide film 82 is heated. When the irradiation time is extremely short flash irradiation of about 0.05 msec or more and 100 msec or less, only the vicinity of the interface between the glass substrate 81 and the polyimide film 82 can be selectively heated. Therefore, by the flash irradiation, it is possible to prevent the element 83 formed on the polyimide film 82 from being heated more than necessary to cause thermal damage.

當藉由閃光照射,玻璃基板81與聚醯亞胺膜82的界面附近迅速昇溫時,玻璃基板81及聚醯亞胺膜82各自的界面附近區域昇溫而進行熱膨脹。此時,因玻璃基板81與聚醯亞胺膜82的線膨脹係數不同,故即便昇溫至相同的溫度,膨脹的程度亦不同。雖然亦依存於玻璃基板81及聚醯亞胺膜82的種類,但一般為聚醯亞胺膜82的線膨脹係數顯著大於玻璃基板81的線膨脹係數(數倍程度以上)。When the vicinity of the interface between the glass substrate 81 and the polyimide film 82 is rapidly heated by the flash irradiation, the vicinity of the interface between the glass substrate 81 and the polyimide film 82 is heated to thermally expand. At this time, since the linear expansion coefficients of the glass substrate 81 and the polyimide film 82 are different, the degree of expansion differs even when the temperature is raised to the same temperature. Although depending on the type of the glass substrate 81 and the polyimide film 82, the linear expansion coefficient of the polyimide film 82 is remarkably larger than the linear expansion coefficient of the glass substrate 81 (several times or more).

而且,藉由閃光照射直接受到加熱的是界面附近的聚醯亞胺膜82(玻璃基板81透過閃光),玻璃基板81是藉由來自昇溫後的聚醯亞胺膜82的熱傳導受到加熱。因此,關於閃光照射時的終點溫度本身,通常亦為聚醯亞胺膜82高於玻璃基板81。因此,當藉由閃光照射,玻璃基板81及聚醯亞胺膜82各自的界面附近區域昇溫時,聚醯亞胺膜82較玻璃基板81更大幅度地進行熱膨脹。其結果,如圖4的箭頭AR4所示,於玻璃基板81與聚醯亞胺膜82的界面,沿與該界面平行的方向欲使聚醯亞胺膜82較玻璃基板81更大幅度地伸長的剪切應力發揮作用。藉由此種沿著玻璃基板81與聚醯亞胺膜82的界面的剪切應力發揮作用,該界面的玻璃基板81與聚醯亞胺膜82的接著力降低。Further, the polyimide film 82 in the vicinity of the interface (the glass substrate 81 is transmitted through the flash) is directly heated by the flash irradiation, and the glass substrate 81 is heated by the heat conduction from the temperature-receiving polyimide film 82. Therefore, as for the end temperature itself at the time of flash irradiation, the polyimide film 82 is usually higher than the glass substrate 81. Therefore, when the region near the interface between the glass substrate 81 and the polyimide film 82 is heated by the flash irradiation, the polyimide film 82 is thermally expanded more greatly than the glass substrate 81. As a result, as shown by an arrow AR4 in FIG. 4, at the interface between the glass substrate 81 and the polyimide film 82, the polyimide film 82 is elongated more than the glass substrate 81 in a direction parallel to the interface. The shear stress plays a role. By such a shear stress along the interface between the glass substrate 81 and the polyimide film 82, the adhesion between the glass substrate 81 and the polyimide film 82 at the interface is lowered.

另外,於本發明中,對聚醯亞胺膜82添加有交聯材。直至即將於照射步驟(階段S4)中照射閃光之前,聚醯亞胺膜82中含有的大部分交聯材為交聯反應未反應的狀態。Further, in the present invention, a crosslinked material is added to the polyimide film 82. Most of the crosslinked material contained in the polyimide film 82 is in a state in which the crosslinking reaction is not reacted until the irradiation of the flash in the irradiation step (stage S4).

於照射步驟(階段S4)中,藉由對含有未反應的交聯材的聚醯亞胺膜82照射閃光而迅速昇溫至高出交聯材的交聯起始溫度的溫度為止,聚醯亞胺膜82中含有的交聯材迅速產生交聯反應。藉此,除如上所述的聚醯亞胺膜82自身的熱膨脹以外,亦藉由聚醯亞胺膜82中含有的交聯材的迅速的交聯反應,欲使聚醯亞胺膜82向與該界面方向平行的方向伸長的剪切應力發揮作用。因此,沿著玻璃基板81與聚醯亞胺膜82的界面的剪切應力更強有力地發揮作用,玻璃基板81與聚醯亞胺膜82的接著力確實地降低。In the irradiation step (stage S4), the polyimine film 82 containing the unreacted crosslinked material is irradiated with a flash to rapidly raise the temperature to a temperature higher than the crosslinking initiation temperature of the crosslinked material. The crosslinked material contained in the film 82 rapidly produces a crosslinking reaction. Thereby, in addition to the thermal expansion of the polyimine film 82 itself as described above, the polyimide film 82 is intended to be transferred by the rapid crosslinking reaction of the crosslinked material contained in the polyimide film 82. Shear stress elongated in a direction parallel to the interface direction acts. Therefore, the shear stress along the interface between the glass substrate 81 and the polyimide film 82 acts more strongly, and the adhesion of the glass substrate 81 and the polyimide film 82 is surely lowered.

藉由如上所述的閃光的照射所引起的接著力降低,後述的階段S7的剝離步驟中的聚醯亞胺膜82的剝離變得極為容易。即,本發明的閃光燈退火裝置1的處理為輔助玻璃基板81上所形成的聚醯亞胺膜82的剝離的處理。The adhesion of the polyimide film 82 in the peeling step of the step S7 described later becomes extremely easy by the decrease in the adhesion caused by the irradiation of the flash as described above. That is, the treatment of the flash lamp annealing apparatus 1 of the present invention is a process of assisting the peeling of the polyimide film 82 formed on the glass substrate 81.

於對被處理體8的閃光照射結束後,停止排氣機構50的排氣,並且自供氣機構40對處理空間15供給氮氣,以進行將腔室10內恢復至大氣壓的氣壓恢複步驟(階段S5)。其後,進行自腔室10搬出處理後的被處理體8的搬出步驟(階段S6)。藉此,閃光燈退火裝置1的一系列的剝離輔助處理完成。After the flash irradiation of the object to be processed 8 is completed, the exhaust of the exhaust mechanism 50 is stopped, and nitrogen gas is supplied from the gas supply mechanism 40 to the processing space 15 to perform a gas pressure recovery step of returning the inside of the chamber 10 to atmospheric pressure (stage S5). Thereafter, the step of carrying out the object to be processed 8 after the processing from the chamber 10 is carried out (stage S6). Thereby, a series of peeling assist processing of the flash lamp annealing apparatus 1 is completed.

接著,於自腔室10搬出的被處理體8中,進行剝離玻璃基板81與聚醯亞胺膜82的剝離步驟(階段S7)。圖5為表示自玻璃基板81剝離作為被剝離層的聚醯亞胺膜82的情況的一例的圖。將聚醯亞胺膜82的端部剝下並利用握持構件(省略圖示)機械性地握持,該握持構件如圖5中的箭頭所示般進行移動,藉此將聚醯亞胺膜82自玻璃基板81剝離。Next, in the object to be processed 8 carried out from the chamber 10, a peeling step (step S7) of peeling off the glass substrate 81 and the polyimide film 82 is performed. FIG. 5 is a view showing an example of a case where the polyimide film 82 as a layer to be peeled off is peeled off from the glass substrate 81. The end portion of the polyimide film 82 is peeled off and mechanically held by a grip member (not shown), and the grip member is moved as indicated by an arrow in FIG. The amine film 82 is peeled off from the glass substrate 81.

藉由照射步驟(階段S4)中的閃光的照射,剪切應力作用於玻璃基板81與聚醯亞胺膜82的界面,因此,所述界面的接著力降低,玻璃基板81與聚醯亞胺膜82的密接變得脆弱。因此,於剝離步驟(階段S7)中自玻璃基板81剝離聚醯亞胺膜82時,可利用小的應力簡單地將聚醯亞胺膜82自玻璃基板81剝離。By the irradiation of the flash in the irradiation step (stage S4), the shear stress acts on the interface between the glass substrate 81 and the polyimide film 82, and therefore, the adhesion of the interface is lowered, and the glass substrate 81 and the polyimide The adhesion of the film 82 becomes weak. Therefore, when the polyimide film 82 is peeled off from the glass substrate 81 in the peeling step (stage S7), the polyimide film 82 can be easily peeled off from the glass substrate 81 with a small stress.

再者,亦可代替握持構件而將聚醯亞胺膜82的端部捲繞於滾筒,藉由使該滾筒旋轉而將聚醯亞胺膜82自玻璃基板81剝離。或者,亦可利用白努利吸盤(Bernoulli chuck)等公知的吸引構件,一邊吸引聚醯亞胺膜82一邊自玻璃基板81進行剝離。Further, instead of the grip member, the end portion of the polyimide film 82 may be wound around the drum, and the polyimide film 82 may be peeled off from the glass substrate 81 by rotating the drum. Alternatively, it may be peeled off from the glass substrate 81 while attracting the polyimide film 82 by a known suction member such as a Bernoulli chuck.

於第1實施形態中,對線膨脹係數不同的玻璃基板81與聚醯亞胺膜82的界面照射閃光而加熱,並利用其等的線膨脹程度不同的情況,沿與該界面平行的方向生成剪切應力。而且,聚醯亞胺膜82中含有交聯材,藉由閃光的照射產生交聯材的迅速的交聯反應,藉此使聚醯亞胺膜82中的沿著與該界面平行的方向的剪切應力成為更強的力。In the first embodiment, the interface between the glass substrate 81 and the polyimide film 82 having different linear expansion coefficients is heated by irradiation with a flash, and the degree of linear expansion is different in the direction parallel to the interface. Shear stress. Further, the polyimide film 82 contains a crosslinked material, and a rapid crosslinking reaction of the crosslinked material is caused by the irradiation of the flash, whereby the polyimine film 82 is oriented in a direction parallel to the interface. Shear stress becomes a stronger force.

藉由該剪切應力發揮作用,玻璃基板81與聚醯亞胺膜82的界面的接著力降低,其等的密接性變弱。因此,於剝離步驟(階段S7)中,可利用小的應力容易地將作為被剝離層的聚醯亞胺膜82自玻璃基板81剝離。因此,可將對聚醯亞胺膜82及安裝於該聚醯亞胺膜82的元件83造成的物理性損傷抑制為最小限度,同時剝離聚醯亞胺膜82。By the action of the shear stress, the adhesion of the interface between the glass substrate 81 and the polyimide film 82 is lowered, and the adhesion therebetween is weak. Therefore, in the peeling step (stage S7), the polyimide film 82 as the peeled layer can be easily peeled off from the glass substrate 81 with a small stress. Therefore, the physical damage to the polyimide film 82 and the element 83 attached to the polyimide film 82 can be minimized, and the polyimide film 82 can be peeled off.

而且,於第1實施形態中,對玻璃基板81與聚醯亞胺膜82的界面的整個面一體地照射閃光,因此,可使界面整個面的接著力均一地降低而減弱密接性。若一體照射照射時間為0.05毫秒以上、100毫秒以下程度的閃光,則與現有的掃描照射雷射光的情況相比,亦可顯著縮短處理時間。Further, in the first embodiment, the entire surface of the interface between the glass substrate 81 and the polyimide film 82 is integrally irradiated with the glitter. Therefore, the adhesion of the entire surface of the interface can be uniformly lowered to reduce the adhesion. When the irradiation of the integrated irradiation time is about 0.05 milliseconds or more and 100 milliseconds or less, the processing time can be remarkably shortened as compared with the case of the conventional scanning irradiation of the laser light.

而且,於第1實施形態中,利用閃光照射引起的玻璃基板81與聚醯亞胺膜82的熱膨脹差異、或聚醯亞胺膜82中含有的交聯材的交聯反應引起的聚醯亞胺膜82的伸縮(彈性的變化)來使界面的接著力降低,因此,與現有的利用雷射光照射進行的剝蝕等相比,可將灰塵的產生抑制地較少。即,藉由對玻璃基板81與添加了交聯材的聚醯亞胺膜82的界面照射閃光,可抑制對作為被剝離層的聚醯亞胺膜82造成的損傷,同時均一且潔淨地輔助被剝離層的剝離。另外,藉由添加交聯材,相較於不添加交聯材的情況,於玻璃基板81與聚醯亞胺膜82的界面生成的剪切應力增強,因此,可更確實地使該界面的接著力降低。Further, in the first embodiment, the difference in thermal expansion between the glass substrate 81 and the polyimide film 82 caused by the flash irradiation or the crosslinking reaction of the crosslinked material contained in the polyimide film 82 is used. The expansion and contraction (change in elasticity) of the amine film 82 reduces the adhesion of the interface. Therefore, the generation of dust can be suppressed less than that of the conventional ablation by laser irradiation. In other words, by irradiating the interface between the glass substrate 81 and the polyimide film 82 to which the crosslinked material is added, the damage to the polyimide film 82 as the peeled layer can be suppressed, and the uniform and clean auxiliary can be assisted. Peeling of the peeled layer. Further, by adding the crosslinked material, the shear stress generated at the interface between the glass substrate 81 and the polyimide film 82 is enhanced as compared with the case where the crosslinked material is not added, so that the interface can be more reliably made. Then the force is reduced.

而且,於第1實施形態中,藉由閃光照射的剝離輔助是於未滿大氣壓的環境下進行。若對玻璃基板81與聚醯亞胺膜82的界面照射閃光而加熱,則自該界面會產生微量的氣體。若於將貼附有作為被剝離層的聚醯亞胺膜82的玻璃基板81的周圍的環境減壓的狀態下,對界面照射閃光而使微量的氣體產生,則因周圍為減壓狀態,故該氣體的氣泡膨脹。其結果,玻璃基板81與聚醯亞胺膜82的密接性進一步變弱,可更簡單地將作為被剝離層的聚醯亞胺膜82自玻璃基板81剝離。Further, in the first embodiment, the peeling assist by the flash irradiation is performed in an environment that is less than atmospheric pressure. When the interface between the glass substrate 81 and the polyimide film 82 is irradiated with a flash and heated, a trace amount of gas is generated from the interface. When the environment around the glass substrate 81 to which the polyimide film 82 of the peeled layer is attached is decompressed, a slight amount of gas is generated by irradiating the interface with a flash, and the periphery is in a decompressed state. Therefore, the gas bubbles of the gas expand. As a result, the adhesion between the glass substrate 81 and the polyimide film 82 is further weakened, and the polyimide film 82 as the peeled layer can be more easily peeled off from the glass substrate 81.

另外,於第1實施形態中,於閃光照射前,保持板20利用內置的加熱器21,將被處理體8加熱至不會對元件83造成熱損傷且聚醯亞胺膜82中含有的交聯材不會引起交聯反應的程度的溫度。藉此,於閃光照射時玻璃基板81與聚醯亞胺膜82的界面受到熱能的輔助,使閃光照射前後的該界面的熱膨脹差異、或藉由閃光照射的交聯反應所引起的聚醯亞胺膜82的伸縮變化更為急遽,並生成更大的剪切應力,藉此使該界面的接著力進一步下降,從而可進一步減弱玻璃基板81與聚醯亞胺膜82的密接性。Further, in the first embodiment, before the flash irradiation, the holding plate 20 is heated by the built-in heater 21 so as not to thermally damage the element 83, and the polyimine film 82 is contained in the polyimide film 82. The temperature at which the joint does not cause a cross-linking reaction. Thereby, the interface between the glass substrate 81 and the polyimide film 82 is assisted by thermal energy at the time of flash irradiation, and the difference in thermal expansion of the interface before and after the flash irradiation or the cross-linking reaction by flash irradiation is used. The expansion and contraction of the amine film 82 is more rapid, and a larger shear stress is generated, whereby the adhesion of the interface is further lowered, whereby the adhesion between the glass substrate 81 and the polyimide film 82 can be further weakened.

根據第1實施形態的電子機器的製造方法,與現有的利用雷射光燒切基底膜表面、或利用強力撕下的製造方法相比,不易破壞元件,可自玻璃基板容易地剝離帶有基底膜的元件且不會損傷基底膜。因此,第1實施形態的電子機器的製造方法能夠以更高的良率進行生產。According to the method of manufacturing an electronic device according to the first embodiment, it is possible to easily peel off the element from the glass substrate as compared with the conventional manufacturing method in which the surface of the base film is burned by laser light or is strongly peeled off. The components do not damage the base film. Therefore, the method of manufacturing an electronic device according to the first embodiment can be produced at a higher yield.

[第2實施形態] 接著,對與所述第1實施形態不同的電子機器的製造方法的一例加以說明。第2實施形態的電子機器的製造方法除以下方面外,基本構成與第1實施形態相同。即,第2實施形態的電子機器的製造方法於閃光燈退火裝置的構成、及照射方法的方面與第1實施形態不同。[Second Embodiment] Next, an example of a method of manufacturing an electronic device different from the first embodiment will be described. The manufacturing method of the electronic device of the second embodiment is the same as that of the first embodiment except for the following points. In other words, the method of manufacturing the electronic device according to the second embodiment differs from the first embodiment in the configuration of the flash lamp annealing device and the irradiation method.

作為對一部分區域的照射,例如可例示對玻璃基板與聚醯亞胺膜的界面中的端緣部進行照射的方法。玻璃基板與聚醯亞胺膜的接著力具有於端緣部增大的傾向。對端緣部集中性地照射閃光的方法於如下般的情況下有效:端緣部若不進行閃光的照射則無法容易地剝離,且端緣部以外的其他區域不進行閃光的照射而可藉由機械性的剝離方法剝離。藉由該方法,可使端緣部的接著力降低而容易地剝離端緣部,藉此可自玻璃基板容易地剝離聚醯亞胺膜。如此般,藉由設為對接著力局部性地高的區域等一部分區域集中性地照射閃光的構成,可抑制閃光的照射對元件的損傷。而且,與整個面照射的情況相比,閃光的照射區域變窄,因此具有可削減閃光燈的電力消耗的效果。As the irradiation of a part of the region, for example, a method of irradiating the edge portion in the interface between the glass substrate and the polyimide film can be exemplified. The adhesion force between the glass substrate and the polyimide film tends to increase at the edge portion. The method of concentrating the flash on the edge portion is effective in the case where the edge portion cannot be easily peeled off without the irradiation of the flash, and the region other than the edge portion can be irradiated without flashing. Peeled by a mechanical peeling method. According to this method, the adhesion of the edge portion can be reduced and the edge portion can be easily peeled off, whereby the polyimide film can be easily peeled off from the glass substrate. In such a manner, it is possible to suppress the damage of the element by the irradiation of the flash by setting a configuration in which a part of the area such as a region where the adhesion force is locally high is concentrated. Further, since the irradiation area of the flash is narrower than in the case of the entire surface irradiation, there is an effect that the power consumption of the flash lamp can be reduced.

圖6為表示第2實施形態的閃光燈退火裝置1a的主要部分構成的圖。於以後的圖中,對與第1實施形態相同的要素附上相同的符號。Fig. 6 is a view showing a configuration of a main part of a flash lamp annealing apparatus 1a according to a second embodiment. In the following figures, the same elements as those in the first embodiment are denoted by the same reference numerals.

第2實施形態的閃光燈退火裝置1a於腔室10內具備遮光板60。圖7為自上方觀察遮光板60而得的平面圖。遮光板60為俯視時矩形的板狀構件,且利用省略圖示的支撐構件固定設置於腔室10內。遮光板60由不透過閃光燈FL的閃光的材質(例如,對閃光的耐性優異的鋁等金屬材料)形成。遮光板60於腔室10內設置於較保持板20靠上方處,從而以覆蓋保持板20所保持的被處理體8的大部分的方式設置。The flash lamp annealing apparatus 1a of the second embodiment includes a light shielding plate 60 in the chamber 10. Fig. 7 is a plan view showing the light shielding plate 60 viewed from above. The light shielding plate 60 is a rectangular plate-shaped member in plan view, and is fixedly disposed in the chamber 10 by a support member (not shown). The light shielding plate 60 is formed of a material that does not transmit the flash of the flash lamp FL (for example, a metal material such as aluminum which is excellent in resistance to flash). The light shielding plate 60 is provided above the holding plate 20 in the chamber 10 so as to cover most of the object to be processed 8 held by the holding plate 20.

第2實施形態如圖7所示,以保持板20所保持的矩形的被處理體8的端緣部中的僅一邊暴露於上方的閃光光源70的方式設置遮光板60。此處,所謂被處理體8的端緣部是指較形成有元件83的區域靠外側的區域。即,元件83並非遍及玻璃基板81上所形成的聚醯亞胺膜82的整個面而安裝,於自聚醯亞胺膜82的端部向內側具有規定寬度的區域中並未安裝元件83。如此般,於聚醯亞胺膜82的端緣未安裝元件83而相對不必要的區域為「聚醯亞胺膜82的端緣部」,於第2實施形態中,其寬度例如為5 mm~10 mm的範圍。再者,將與未安裝元件83的聚醯亞胺膜82的端緣部對應的玻璃基板81的區域稱為「玻璃基板81的端緣部」,且將包含聚醯亞胺膜82及玻璃基板81的被處理體8的區域稱為「被處理體8的端緣部」。In the second embodiment, as shown in FIG. 7, the light shielding plate 60 is provided so that only one of the edge portions of the rectangular object to be processed 8 held by the holding plate 20 is exposed to the upper flash light source 70. Here, the end edge portion of the object to be processed 8 means a region outside the region where the element 83 is formed. That is, the element 83 is not attached over the entire surface of the polyimide film 82 formed on the glass substrate 81, and the element 83 is not mounted in a region having a predetermined width from the end portion of the polyimide film 82 to the inside. In this manner, the region where the element 83 is not attached to the edge of the polyimide film 82 and is relatively unnecessary is the "edge portion of the polyimide film 82", and in the second embodiment, the width is, for example, 5 mm. A range of ~10 mm. In addition, the region of the glass substrate 81 corresponding to the edge portion of the polyimide film 82 to which the element 83 is not mounted is referred to as "the edge portion of the glass substrate 81", and the polyimide film 82 and the glass are contained. The region of the substrate 8 to be processed 8 is referred to as "the edge portion of the object 8 to be processed".

而且,於第2實施形態中,如圖6所示,閃光光源70具備一根閃光燈FL。於閃光燈FL的上方設置有反射器72。第2實施形態的閃光燈FL設置於未由遮光板60覆蓋的被處理體8的端緣部的正上方。即,閃光燈FL僅配置在與自遮光板60暴露出的被處理體8的端緣部對向的位置。因此,對未由遮光板60覆蓋的被處理體8的端緣部集中性地照射自閃光燈FL出射的閃光。Further, in the second embodiment, as shown in Fig. 6, the flash light source 70 is provided with one flasher FL. A reflector 72 is disposed above the flash lamp FL. The flasher FL of the second embodiment is disposed directly above the edge portion of the object 8 that is not covered by the light shielding plate 60. That is, the flasher FL is disposed only at a position opposed to the end edge portion of the object to be processed 8 exposed from the light shielding plate 60. Therefore, the edge portion of the object to be processed 8 that is not covered by the light shielding plate 60 is concentratedly irradiated with the flash light emitted from the flash lamp FL.

除遮光板60及閃光光源70之外的閃光燈退火裝置1a的剩餘的構成與第1實施形態的閃光燈退火裝置1相同。而且,第2實施形態的閃光燈退火裝置1a的處理順序亦與第1實施形態大致相同(參照圖2)。The remaining configuration of the flash lamp annealing apparatus 1a other than the light shielding plate 60 and the flash light source 70 is the same as that of the flash lamp annealing apparatus 1 of the first embodiment. The processing procedure of the flash lamp annealing apparatus 1a of the second embodiment is also substantially the same as that of the first embodiment (see FIG. 2).

於第2實施形態中,於照射步驟(階段S4)的閃光照射時,自閃光燈FL出射的閃光的一部分被遮光板60遮斷,對保持板20所保持的被處理體8中未由遮光板60覆蓋的端緣部選擇性地照射閃光。因此,對玻璃基板81與聚醯亞胺膜82的界面中的端緣部選擇性地照射閃光,從而集中性地使該端緣部昇溫。因於端緣部未安裝元件83,故第2實施形態中,亦可以聚醯亞胺膜82的端緣部表面被加熱至足夠高的溫度(例如加熱至高於第1實施形態的溫度)的程度照射強閃光。In the second embodiment, at the time of the flash irradiation in the irradiation step (stage S4), a part of the flash emitted from the flash lamp FL is blocked by the light shielding plate 60, and the light-receiving plate is not provided in the object 8 to be held by the holding plate 20. The edge portion of the 60 cover selectively illuminates the flash. Therefore, the edge portion of the interface between the glass substrate 81 and the polyimide film 82 is selectively irradiated with a flash, and the edge portion is gradually heated. Since the element 83 is not attached to the edge portion, in the second embodiment, the surface of the edge portion of the polyimide film 82 may be heated to a sufficiently high temperature (for example, heated to a temperature higher than that of the first embodiment). The degree of illumination is strong.

因玻璃基板81與聚醯亞胺膜82的線膨脹係數不同,故若對玻璃基板81與聚醯亞胺膜82的界面的端緣部照射閃光而加熱,則因其等的熱膨脹差異而剪切應力作用於該界面。Since the linear expansion coefficient of the glass substrate 81 and the polyimide film 82 is different, when the edge of the interface between the glass substrate 81 and the polyimide film 82 is heated by the flash, the heat is expanded due to the difference in thermal expansion. Shear stress acts on the interface.

另外,於本發明中,對聚醯亞胺膜82添加有交聯材。此處,照射閃光之前的步驟為與第1實施形態相同的步驟,因此,始終於低於該交聯材的交聯起始溫度的溫度下進行處理,從而直至即將於照射步驟(階段S4)中照射閃光之前,聚醯亞胺膜82中含有的交聯材為交聯反應未反應的狀態。Further, in the present invention, a crosslinked material is added to the polyimide film 82. Here, the step before the irradiation of the flash is the same step as in the first embodiment, and therefore, the treatment is always performed at a temperature lower than the crosslinking initiation temperature of the crosslinked material, so that the irradiation step (stage S4) is to be performed. Before the medium-illumination flash, the crosslinked material contained in the polyimide film 82 is in a state in which the crosslinking reaction is not reacted.

於照射步驟(階段S4)中,藉由對含有未反應的交聯材的聚醯亞胺膜82的端緣部照射閃光,聚醯亞胺膜82的端緣部中含有的交聯材迅速昇溫至高出交聯材的交聯起始溫度的溫度為止,並迅速產生交聯反應。藉此,除如上所述的聚醯亞胺膜82自身的熱膨脹以外,亦藉由聚醯亞胺膜82中含有的交聯材的迅速的交聯反應,欲使聚醯亞胺膜82向與該界面方向平行的方向伸長的剪切應力發揮作用。因此,於被處理體8的端緣部,沿著玻璃基板81與聚醯亞胺膜82的界面的剪切應力更強有力地發揮作用,玻璃基板81與聚醯亞胺膜82的接著力確實地降低。因此,聚醯亞胺膜82的端緣部變得容易自玻璃基板81剝離。In the irradiation step (stage S4), the edge portion of the polyimide film 82 containing the unreacted crosslinked material is irradiated with a flash, and the crosslinked material contained in the edge portion of the polyimide film 82 is rapidly formed. The temperature is raised to a temperature higher than the crosslinking initiation temperature of the crosslinked material, and a crosslinking reaction is rapidly generated. Thereby, in addition to the thermal expansion of the polyimine film 82 itself as described above, the polyimide film 82 is intended to be transferred by the rapid crosslinking reaction of the crosslinked material contained in the polyimide film 82. Shear stress elongated in a direction parallel to the interface direction acts. Therefore, at the edge portion of the object to be processed 8, the shear stress along the interface between the glass substrate 81 and the polyimide film 82 acts more strongly, and the adhesion between the glass substrate 81 and the polyimide film 82 is exerted. Really lower. Therefore, the edge portion of the polyimide film 82 is easily peeled off from the glass substrate 81.

而且,於第2實施形態中,亦於未滿大氣壓的減壓環境下進行閃光照射,因此,於被處理體8的端緣部中的玻璃基板81與聚醯亞胺膜82的界面,微量的氣體的氣泡因加熱而膨脹,藉此玻璃基板81與聚醯亞胺膜82的密接性進一步變弱,聚醯亞胺膜82的端緣部更確實地變得容易剝離。Further, in the second embodiment, since the flash irradiation is performed in a reduced pressure atmosphere that is less than atmospheric pressure, the interface between the glass substrate 81 and the polyimide film 82 in the edge portion of the target body 8 is minute. The air bubbles of the gas expand by heating, whereby the adhesion between the glass substrate 81 and the polyimide film 82 is further weakened, and the edge portion of the polyimide film 82 is more reliably peeled off.

此處,若照射更強的閃光,除可更確實地執行聚醯亞胺膜82的剝離以外,亦具有之後的剝離步驟(階段S7)變得容易的效果。若照射更強的閃光,則更強有力的剪切應力作用於聚醯亞胺膜82的端緣部中的與玻璃基板81的界面。藉此,於閃光照射後,聚醯亞胺膜82的端緣部的一部分以上翻的方式剝離,於之後的剝離步驟(階段S7)中對聚醯亞胺膜82的機械性的握持變得容易。於第2實施形態中,以後以藉由更強的閃光的照射而聚醯亞胺膜82的端緣部為已剝離的狀態為前提加以說明。Here, when a stronger flash is applied, the peeling of the polyimide film 82 can be performed more reliably, and the subsequent peeling step (stage S7) is also easy. When a stronger flash is irradiated, a stronger shear stress acts on the interface with the glass substrate 81 in the edge portion of the polyimide film 82. Thereby, after the flash irradiation, a part of the edge portion of the polyimide film 82 is peeled off, and the mechanical grip of the polyimide film 82 in the subsequent peeling step (stage S7) is changed. It's easy. In the second embodiment, the end edge portion of the polyimide film 82 is peeled off by irradiation with a stronger flash.

其後,於剝離步驟(階段S7)中,利用握持構件機械性地握持藉由照射步驟(階段S4)中的閃光照射而剝離的聚醯亞胺膜82的端緣部,並與第1實施形態同樣地將聚醯亞胺膜82整體自玻璃基板81剝離。Thereafter, in the peeling step (stage S7), the end edge portion of the polyimide film 82 which is peeled off by the flash irradiation in the irradiation step (stage S4) is mechanically gripped by the grip member, and In the embodiment, the entire polyimide film 82 is peeled off from the glass substrate 81 in the same manner.

於第2實施形態中,利用遮光板60遮斷閃光的一部分,藉此僅對被處理體8的端緣部照射閃光而僅將玻璃基板81與聚醯亞胺膜82的界面的端緣部加熱。關於利用一般的塗佈法形成的聚醯亞胺膜82與玻璃基板81的密接性,確認到具有相較於中央部附近而於端緣部增強的傾向。因此,如第2實施形態般,若藉由閃光照射而僅將玻璃基板81與聚醯亞胺膜82的界面的端緣部加熱並使結合力降低,以將聚醯亞胺膜82的端緣部自玻璃基板81剝下,則於剝離步驟(階段S7)的剝離步驟中,可容易地將作為被剝離層的聚醯亞胺膜82自玻璃基板81剝離。In the second embodiment, a part of the flash is blocked by the light shielding plate 60, whereby only the edge portion of the object to be processed 8 is irradiated with a flash, and only the edge portion of the interface between the glass substrate 81 and the polyimide film 82 is irradiated. heating. The adhesion between the polyimide film 82 formed by the general coating method and the glass substrate 81 tends to be stronger at the edge portion than in the vicinity of the center portion. Therefore, as in the second embodiment, only the edge portion of the interface between the glass substrate 81 and the polyimide film 82 is heated by the flash irradiation, and the bonding force is lowered to bring the end of the polyimide film 82. When the edge portion is peeled off from the glass substrate 81, the polyimide film 82 as the peeled layer can be easily peeled off from the glass substrate 81 in the peeling step of the peeling step (stage S7).

而且,與第1實施形態同樣地,利用閃光照射引起的玻璃基板81與聚醯亞胺膜82的熱膨脹差異來使界面的結合力降低,因此,與現有的利用雷射光照射進行的剝蝕等相比,可將灰塵的產生抑制地較少。因此,如第2實施形態般,亦可抑制對作為被剝離層的聚醯亞胺膜82造成的損傷,同時潔淨地輔助被剝離層的剝離。Further, in the same manner as in the first embodiment, the difference in thermal expansion between the glass substrate 81 and the polyimide film 82 caused by the flash irradiation reduces the bonding strength of the interface, and therefore, it is similar to the conventional ablation using laser light irradiation. In comparison, the generation of dust can be suppressed less. Therefore, as in the second embodiment, damage to the polyimide film 82 as the peeled layer can be suppressed, and peeling of the peeled layer can be cleanly assisted.

尤其,於第2實施形態中,僅對未安裝元件83的不必要區域即被處理體8的端緣部照射閃光而加熱,因此可確實地防止對元件83造成熱損傷。而且,因無須考慮對元件83造成的熱損傷,故可使閃光燈FL的發光強度足夠強,可藉由閃光照射確實地將聚醯亞胺膜82的端緣部自玻璃基板81剝離。In particular, in the second embodiment, only the unnecessary portion of the unmounted member 83, that is, the edge portion of the object to be processed 8, is irradiated with a flash to be heated, so that thermal damage to the element 83 can be surely prevented. Further, since it is not necessary to consider thermal damage to the element 83, the luminous intensity of the flash lamp FL can be made sufficiently strong, and the edge portion of the polyimide film 82 can be surely peeled off from the glass substrate 81 by flash irradiation.

[第3實施形態] 第3實施形態的電子機器的製造方法除以下方面外,基本構成及製造方法與第1實施形態的電子機器的製造方法相同。即,第3實施形態於在玻璃基板形成光吸收層的方面與不使用光吸收層的第1實施形態不同。[Third Embodiment] The method for manufacturing an electronic device according to the third embodiment is the same as the method for manufacturing an electronic device according to the first embodiment except for the following points. In other words, the third embodiment is different from the first embodiment in which the light absorbing layer is formed on the glass substrate and the light absorbing layer is not used.

閃光燈退火裝置的構成與第1實施形態的閃光燈退火裝置1完全相同。而且,第3實施形態中的處理順序亦與第1實施形態大致相同(參照圖2)。因此,對與第1實施形態相同的處理順序省略說明。The configuration of the flash lamp annealing device is completely the same as that of the flash lamp annealing device 1 of the first embodiment. Further, the processing procedure in the third embodiment is also substantially the same as that in the first embodiment (see Fig. 2). Therefore, the description of the same processing procedure as in the first embodiment will be omitted.

於第3實施形態中,於將被處理體8搬入腔室10內之前,於玻璃基板81的端緣部形成黑色的光吸收層85。圖8為自玻璃基板81側觀察形成了光吸收層85的被處理體8而得的平面圖。於矩形的被處理體8的端緣部,黑色的光吸收層85形成於玻璃基板81的表面。具體而言,例如於玻璃基板81的表面端緣部塗佈黑色的塗料來形成光吸收層85即可。再者,所謂被處理體8的端緣部,與第2實施形態相同地為較安裝有元件83的區域靠外側的區域。於第3實施形態中,於矩形的被處理體8的全部四邊的端緣部形成有光吸收層85。In the third embodiment, a black light absorbing layer 85 is formed on the edge portion of the glass substrate 81 before the object to be processed 8 is carried into the chamber 10. FIG. 8 is a plan view of the object 8 on which the light absorbing layer 85 is formed as viewed from the side of the glass substrate 81. A black light absorbing layer 85 is formed on the surface of the glass substrate 81 at the end edge portion of the rectangular processed object 8. Specifically, for example, a black paint may be applied to the surface edge portion of the glass substrate 81 to form the light absorbing layer 85. In addition, the end edge portion of the object to be processed 8 is a region outside the region where the element 83 is attached, as in the second embodiment. In the third embodiment, the light absorbing layer 85 is formed on the edge portions of all four sides of the rectangular object to be processed 8.

將此種於端緣部形成了光吸收層85的被處理體8搬入腔室10內(階段S1),並保持於保持板20(階段S2)。被處理體8使玻璃基板81朝向上側而被保持於保持板20。因此,形成於被處理體8的端緣部的光吸收層85亦朝向上側。The object to be processed 8 in which the light absorbing layer 85 is formed at the edge portion is carried into the chamber 10 (stage S1), and held in the holding plate 20 (stage S2). The object to be processed 8 holds the glass substrate 81 toward the upper side and is held by the holding plate 20. Therefore, the light absorbing layer 85 formed on the edge portion of the object to be processed 8 also faces the upper side.

於第3實施形態中,於照射步驟(階段S4)的閃光照射時,與第1實施形態同樣地對被處理體8的整個面照射閃光。圖9為表示對第3實施形態中的被處理體8照射了閃光的狀態的圖。自被處理體8的上側、即玻璃基板81之側照射自設置於腔室10的上方的閃光燈FL出射的閃光。因光吸收層85為黑色,故遍及全波長區域吸收所接受的閃光。因此,於被處理體8的端緣部,藉由閃光照射而光吸收層85顯著昇溫,且藉由自該光吸收層85的熱傳導,玻璃基板81與聚醯亞胺膜82的界面的端緣部被集中性地加熱。於較被處理體8的端緣部靠內側的區域,與第1實施形態同樣地利用透過玻璃基板81的閃光而玻璃基板81與聚醯亞胺膜82的界面被加熱,但相較於內側區域,設置了黑色的光吸收層85的界面端緣部受到更強的加熱。In the third embodiment, in the case of the flash irradiation in the irradiation step (stage S4), the entire surface of the object to be processed 8 is irradiated with a flash as in the first embodiment. FIG. 9 is a view showing a state in which the object to be processed 8 in the third embodiment is irradiated with a flash. The flash emitted from the flasher FL provided above the chamber 10 is irradiated from the upper side of the object to be processed 8, that is, the side of the glass substrate 81. Since the light absorbing layer 85 is black, the received flash is absorbed throughout the entire wavelength region. Therefore, at the edge portion of the object to be processed 8, the light absorbing layer 85 is heated significantly by the flash irradiation, and the end of the interface between the glass substrate 81 and the polyimide film 82 is performed by heat conduction from the light absorbing layer 85. The rim is heated centrally. In the region on the inner side of the edge portion of the object to be processed 8, the interface between the glass substrate 81 and the polyimide film 82 is heated by the flash of the glass substrate 81 as in the first embodiment, but compared to the inner side. In the region, the edge portion of the interface of the black light absorbing layer 85 is more heated.

玻璃基板81與聚醯亞胺膜82的線膨脹係數不同,因此,若對玻璃基板81與聚醯亞胺膜82的界面照射閃光而加熱,則因其等的熱膨脹差異而剪切應力作用於該界面。於第3實施形態中,尤其玻璃基板81與聚醯亞胺膜82的界面的端緣部被集中性地加熱,因此,強切斷應力作用於該界面的端緣部。藉由該強切斷應力發揮作用,玻璃基板81與聚醯亞胺膜82的界面端緣部的結合力降低,從而聚醯亞胺膜82的端緣部自玻璃基板81剝落。Since the glass substrate 81 and the polyimide film 82 have different linear expansion coefficients, when the interface between the glass substrate 81 and the polyimide film 82 is irradiated with a flash and heated, shear stress acts on the difference in thermal expansion. The interface. In the third embodiment, in particular, the edge portion of the interface between the glass substrate 81 and the polyimide film 82 is concentratedly heated. Therefore, a strong cutting stress acts on the edge portion of the interface. By the action of the strong cutting stress, the bonding strength between the glass substrate 81 and the edge portion of the interface of the polyimide film 82 is lowered, and the edge portion of the polyimide film 82 is peeled off from the glass substrate 81.

另外,於本發明中,對聚醯亞胺膜82添加有交聯材。此處,於照射閃光之前的步驟中,始終於低於該交聯材的交聯起始溫度的溫度下進行處理,從而直至即將於照射步驟(階段S4)中照射閃光之前,聚醯亞胺膜82中含有的交聯材為交聯反應未反應的狀態。Further, in the present invention, a crosslinked material is added to the polyimide film 82. Here, in the step before the irradiation of the flash, the treatment is always performed at a temperature lower than the crosslinking initiation temperature of the crosslinked material, so that the polyimine is to be irradiated immediately before the irradiation in the irradiation step (stage S4). The crosslinked material contained in the film 82 is in a state in which the crosslinking reaction is not reacted.

於照射步驟(階段S4)中,藉由對含有未反應的交聯材的聚醯亞胺膜82照射閃光,聚醯亞胺膜82中含有的交聯材迅速昇溫至高出交聯材的交聯起始溫度的溫度為止,並迅速產生交聯反應。藉此,除如上所述的聚醯亞胺膜82自身的熱膨脹以外,亦藉由聚醯亞胺膜82中含有的交聯材的迅速的交聯反應,欲使聚醯亞胺膜82向與該界面方向平行的方向伸長的剪切應力發揮作用。因此,沿著玻璃基板81與聚醯亞胺膜82的界面的剪切應力更強有力地發揮作用,玻璃基板81與聚醯亞胺膜82的接著力確實地降低。In the irradiation step (stage S4), by irradiating the polyimine film 82 containing the unreacted crosslinked material with a flash, the crosslinked material contained in the polyimide film 82 is rapidly heated to a level higher than that of the crosslinked material. The temperature of the initial temperature is reached, and a crosslinking reaction is rapidly generated. Thereby, in addition to the thermal expansion of the polyimine film 82 itself as described above, the polyimide film 82 is intended to be transferred by the rapid crosslinking reaction of the crosslinked material contained in the polyimide film 82. Shear stress elongated in a direction parallel to the interface direction acts. Therefore, the shear stress along the interface between the glass substrate 81 and the polyimide film 82 acts more strongly, and the adhesion of the glass substrate 81 and the polyimide film 82 is surely lowered.

而且,於第3實施形態中,亦藉由減壓步驟(階段S3)將腔室10內減壓,從而於照射步驟(階段S4)中,於未滿大氣壓的減壓環境下進行閃光照射,因此,藉由加熱,於界面端緣部產生的微量的氣體的氣泡膨脹,玻璃基板81與聚醯亞胺膜82的密接性進一步變弱,聚醯亞胺膜82的端緣部更確實地剝落。Further, in the third embodiment, the inside of the chamber 10 is also depressurized by the pressure reduction step (stage S3), and in the irradiation step (stage S4), the flash irradiation is performed under a reduced pressure atmosphere which is less than atmospheric pressure. Therefore, by the heating, the bubbles of a small amount of gas generated at the edge of the interface are expanded, and the adhesion between the glass substrate 81 and the polyimide film 82 is further weakened, and the edge portion of the polyimide film 82 is more surely Peel off.

其後,於剝離步驟(階段S7)中,利用握持構件機械性地握持藉由閃光照射而剝落的聚醯亞胺膜82的端緣部,並與第1實施形態同樣地將聚醯亞胺膜82整體自玻璃基板81剝離。Then, in the peeling step (stage S7), the edge portion of the polyimide film 82 which is peeled off by the flash irradiation is mechanically held by the grip member, and the polypigment is similar to that of the first embodiment. The entire imine film 82 is peeled off from the glass substrate 81.

於第3實施形態中,於被處理體8的玻璃基板81的端緣部形成黑色的光吸收層85,並對該被處理體8自閃光燈FL照射閃光。光吸收率高的黑色的光吸收層85藉由閃光照射而顯著昇溫,且藉由自該光吸收層85的熱傳導,玻璃基板81與聚醯亞胺膜82的界面的端緣部被集中性地加熱。如所述般,關於利用塗佈法形成的聚醯亞胺膜82與玻璃基板81的密接性,確認到具有相較於中央部附近而於端緣部增強的傾向。因此,如第3實施形態般,若藉由閃光照射而僅將玻璃基板81與聚醯亞胺膜82的界面的端緣部集中性地加熱並使結合力降低,以將聚醯亞胺膜82的端緣部自玻璃基板81剝下,則於階段S7的剝離步驟中,可容易地將作為被剝離層的聚醯亞胺膜82自玻璃基板81剝離。In the third embodiment, a black light absorbing layer 85 is formed on the edge portion of the glass substrate 81 of the object 8 to be processed, and the object to be processed 8 is irradiated with a flash from the flash lamp FL. The black light absorbing layer 85 having a high light absorptivity is heated significantly by flash irradiation, and the edge portion of the interface between the glass substrate 81 and the polyimide film 82 is concentrated by heat conduction from the light absorbing layer 85. Ground heating. As described above, the adhesion between the polyimide film 82 formed by the coating method and the glass substrate 81 tends to be stronger at the edge portion than in the vicinity of the center portion. Therefore, as in the third embodiment, only the edge portion of the interface between the glass substrate 81 and the polyimide film 82 is heated by the flash irradiation, and the bonding force is lowered to reduce the binding force. When the edge portion of 82 is peeled off from the glass substrate 81, the polyimide film 82 as the peeled layer can be easily peeled off from the glass substrate 81 in the peeling step of the step S7.

而且,與第1實施形態同樣地,利用閃光照射引起的玻璃基板81與聚醯亞胺膜82的熱膨脹差異來使界面的結合力降低,因此,與現有的利用雷射光照射進行的剝蝕等相比,可將灰塵的產生抑制地較少。因此,如第3實施形態般,亦可抑制對作為被剝離層的聚醯亞胺膜82造成的損傷,同時潔淨地輔助被剝離層的剝離。Further, in the same manner as in the first embodiment, the difference in thermal expansion between the glass substrate 81 and the polyimide film 82 caused by the flash irradiation reduces the bonding strength of the interface, and therefore, it is similar to the conventional ablation using laser light irradiation. In comparison, the generation of dust can be suppressed less. Therefore, as in the third embodiment, damage to the polyimide film 82 as the peeled layer can be suppressed, and peeling of the peeled layer can be cleanly assisted.

[第4實施形態] 接著,對本發明的第4實施形態加以說明。第4實施形態的電子機器的製造方法除以下方面外,基本構成及製造方法與第1實施形態的電子機器的製造方法相同。即,第4實施形態於使用光學濾光器的方面與不使用光學濾光器的第1實施形態不同。[Fourth embodiment] Next, a fourth embodiment of the present invention will be described. The manufacturing method of the electronic device of the fourth embodiment is the same as the manufacturing method of the electronic device of the first embodiment except for the following points. That is, the fourth embodiment differs from the first embodiment in which the optical filter is not used in the case of using the optical filter.

聚醯亞胺膜一般具有容易吸收短波長的光(400 nm~500 nm以下)且容易透過長波長(400 nm~500 nm以上)的光的光學特性。因此,當來自閃光燈的閃光中包含長波長區域的光時,有閃光透過聚醯亞胺膜且使元件過熱之虞。因使用使聚醯亞胺膜效率良好地昇溫的波長帶的光,故使用將長波長區域的光截止的光學濾光器。藉此,藉由設置光學濾光器這一簡單的構成追加,具有可抑制對元件等的損傷的效果。可根據聚醯亞胺膜的光吸收光譜,將對特定的波長帶進行截止的光學濾光器設置於玻璃基板與閃光燈之間,亦可設為使玻璃基板自身為該光學濾光器的構成。圖10為表示第4實施形態的閃光退火裝置1b的主要部分構成的圖。於圖10中,對與第1實施形態相同的要素附上相同的符號。The polyimide film generally has an optical property of easily absorbing short-wavelength light (400 nm to 500 nm or less) and easily transmitting light having a long wavelength (400 nm to 500 nm or more). Therefore, when the flash from the flash lamp contains light in a long wavelength region, there is a possibility that the flash passes through the polyimide film and the element is overheated. Since light of a wavelength band in which the polyimide film is efficiently heated is used, an optical filter that cuts off light in a long wavelength region is used. In this way, by adding a simple configuration in which an optical filter is provided, it is possible to suppress damage to components and the like. The optical filter that cuts off a specific wavelength band may be disposed between the glass substrate and the flash lamp according to the light absorption spectrum of the polyimide film, or may be configured such that the glass substrate itself is the optical filter. . Fig. 10 is a view showing a configuration of a main part of a flash annealing apparatus 1b according to a fourth embodiment. In FIG. 10, the same elements as those in the first embodiment are denoted by the same reference numerals.

於圖10的閃光退火裝置1b中,在腔室10的腔室窗18與閃光光源70之間配設有光學濾光器74。第4實施形態的光學濾光器是使鋇(Ba)、砷(As)、銻(Sb)、鎘(Cd)等金屬熔解於石英玻璃中而形成的板狀的光學構件。更詳細而言,於石英玻璃中熔解而含有選自由鋇、砷、銻、鎘所組成的組群中的至少一種以上的金屬。藉由於石英玻璃中含有金屬成分,可將透過光學濾光器74的光中規定波長區域的光反射或吸收而截止(遮光)。所截止的波長區域依存於石英玻璃中所熔解的金屬的種類。本實施形態的光學濾光器74截止波長400 nm以上的長波長側的成分,且透過較波長400 nm短的紫外光。In the flash annealing apparatus 1b of FIG. 10, an optical filter 74 is disposed between the chamber window 18 of the chamber 10 and the flash light source 70. The optical filter of the fourth embodiment is a plate-shaped optical member formed by melting a metal such as barium (Ba), arsenic (As), antimony (Sb), or cadmium (Cd) in quartz glass. More specifically, it is melted in quartz glass and contains at least one metal selected from the group consisting of ruthenium, arsenic, antimony, and cadmium. Since the quartz glass contains a metal component, light in a predetermined wavelength region of the light transmitted through the optical filter 74 can be reflected or absorbed and turned off (light-shielded). The wavelength region to be cut depends on the type of metal melted in the quartz glass. The optical filter 74 of the present embodiment cuts off a component having a long wavelength side of a wavelength of 400 nm or more and transmits ultraviolet light having a shorter wavelength of 400 nm.

另外,為了防止因吸收閃光引起的光學濾光器74的加熱,亦可設置對光學濾光器74吹附冷卻空氣的公知的吹附機構。Further, in order to prevent heating of the optical filter 74 due to absorption of the flash, a known blowing mechanism that blows cooling air to the optical filter 74 may be provided.

藉由在腔室10與閃光光源70之間設置光學濾光器74,當自閃光燈FL出射的閃光透過光學濾光器74時,波長400 nm以上的成分被截止。並且,具有剩餘的未滿波長400 nm的紫外區域的成分的閃光透過光學濾光器74而照射至保持板20所保持的被處理體8。By providing the optical filter 74 between the chamber 10 and the flash light source 70, when the flash emitted from the flash lamp FL passes through the optical filter 74, the component having a wavelength of 400 nm or more is turned off. Further, the flash having the remaining components of the ultraviolet region having a wavelength of 400 nm or less is transmitted through the optical filter 74 to be irradiated to the object 8 to be processed held by the holding plate 20.

圖11為表示氙的閃光燈FL的放射分光分佈的圖。如該圖所示,氙的閃光燈FL的放射分光分佈自紫外區域到達近紅外區域,包含較波長400 nm為短波長側的紫外光與為長波長側的可見光及紅外光。於本實施形態中,利用光學濾光器74將波長400 nm以上的成分截止,藉此對被處理體8照射較波長400 nm短的紫外區域的閃光。Fig. 11 is a view showing the radiation spectral distribution of the flash lamp FL of the cymbal. As shown in the figure, the emission spectrum of the flash lamp FL of the crucible reaches the near-infrared region from the ultraviolet region, and includes ultraviolet light having a shorter wavelength side than a wavelength of 400 nm and visible light and infrared light having a longer wavelength side. In the present embodiment, the component having a wavelength of 400 nm or more is turned off by the optical filter 74, whereby the object 8 is irradiated with a flash of an ultraviolet region having a shorter wavelength of 400 nm.

於第4實施形態中,玻璃基板81由石英玻璃構成,且透過比波長400 nm短的紫外區域的閃光。其結果,紫外區域的閃光透過玻璃基板81而照射至玻璃基板81與聚醯亞胺膜82的界面。而且,於第4實施形態中,對被處理體8的整個面一體地照射紫外區域的閃光。In the fourth embodiment, the glass substrate 81 is made of quartz glass and transmits a flash of light in an ultraviolet region shorter than a wavelength of 400 nm. As a result, the flash of the ultraviolet region is transmitted through the glass substrate 81 to the interface between the glass substrate 81 and the polyimide film 82. Further, in the fourth embodiment, the entire surface of the object to be processed 8 is integrally irradiated with the flash of the ultraviolet region.

一般的聚醯亞胺膜對紫外區域的光的光吸收率高,且對較紫外區域為長波長側的可見光及紅外區域的光的光吸收率低。因此,若直接對被處理體8自玻璃基板81側照射具有如圖11所示的波長的閃光,則紫外區域的閃光被聚醯亞胺膜82吸收,較紫外區域為長波長側的可見光區域及紅外區域的閃光的一部分未被聚醯亞胺膜82完全吸收而透過,並到達安裝於聚醯亞胺膜82的元件83。藉此,若元件83過熱,則有於元件83產生損傷之虞。A general polyimide film has a high light absorption rate of light in the ultraviolet region, and has a low light absorption rate for light in the visible light region and the infrared region on the long wavelength side in the ultraviolet region. Therefore, if the object to be processed 8 is directly irradiated from the glass substrate 81 side with a flash having a wavelength as shown in FIG. 11, the flash of the ultraviolet region is absorbed by the polyimide film 82, and the ultraviolet region is the visible region of the long wavelength side. A part of the flash of the infrared region is completely absorbed by the polyimide film 82 and transmitted, and reaches the element 83 attached to the polyimide film 82. Thereby, if the element 83 is overheated, there is a risk that the element 83 is damaged.

因此,於第4實施形態中進一步設置光學濾光器74,藉此,利用光學濾光器74截止在聚醯亞胺膜82中光吸收率低的波長區域的閃光,且對被處理體8選擇性地照射聚醯亞胺膜82容易吸收的波長區域的閃光。照射至聚醯亞胺膜82的紫外區域的閃光被聚醯亞胺膜82效率良好地吸收,幾乎未照射至安裝於聚醯亞胺膜82的元件83。因此,可抑制元件83因閃光而過熱且於元件83產生損傷。Therefore, in the fourth embodiment, the optical filter 74 is further provided, whereby the flash of the wavelength region in which the light absorptivity is low in the polyimide film 82 is cut off by the optical filter 74, and the object to be processed 8 is processed. The flash of the wavelength region which is easily absorbed by the polyimide film 82 is selectively irradiated. The glitter irradiated to the ultraviolet region of the polyimide film 82 is efficiently absorbed by the polyimide film 82, and is hardly irradiated to the element 83 attached to the polyimide film 82. Therefore, it is possible to suppress the element 83 from being overheated by the flash and causing damage to the element 83.

<變形例> 以上,對本發明的實施形態進行了說明,但該發明於不脫離其主旨的限度內,可於所述內容以外進行各種變更。例如,於上述各實施形態中,將在貼附於玻璃基板81上的聚醯亞胺膜82安裝元件83而成者設為被處理體8,但被處理體8並不限定於此,可進行各種變化。<Modifications> The embodiments of the present invention have been described above, but the invention can be variously modified without departing from the spirit and scope of the invention. For example, in the above-described embodiments, the component 83 is attached to the polyimide film 82 attached to the glass substrate 81. The object to be processed 8 is not limited thereto. Make various changes.

於第1實施形態中,作為玻璃基板81的材質而使用了石英玻璃,但關於本發明的實施並不限定於此,亦可使用其他公知的玻璃材料構成玻璃基板81,亦可使用對石英玻璃添加了各種公知的添加物的玻璃。In the first embodiment, quartz glass is used as the material of the glass substrate 81. However, the implementation of the present invention is not limited thereto, and the glass substrate 81 may be formed using another known glass material, and the quartz glass may be used. Glass of various known additives is added.

而且,於第1實施形態中,閃光燈退火裝置1是使被處理體8中的玻璃基板81朝向上側而保持,但關於本發明的實施並不限定於此,亦可使被處理體8中的玻璃基板81朝向下側而保持。此時,閃光光源70亦設置於被處理體8的下側,從而成為與第1實施形態相同的自玻璃基板81側照射閃光的構成。In the first embodiment, the flash lamp annealing apparatus 1 holds the glass substrate 81 in the target object 8 toward the upper side. However, the implementation of the present invention is not limited thereto, and the object to be processed 8 may be used. The glass substrate 81 is held toward the lower side. At this time, the flash light source 70 is also disposed on the lower side of the object to be processed 8, and is configured to emit a flash from the glass substrate 81 side as in the first embodiment.

於第2實施形態中,使矩形的被處理體8的端緣部中僅一邊暴露至上方的閃光光源70,但亦可以端緣部的兩邊以上暴露至閃光光源70的方式設置遮光板60。如此般,藉由閃光照射僅將玻璃基板81與聚醯亞胺膜82的界面的端緣部加熱並使結合力降低,從而亦可容易地將作為被剝離層的聚醯亞胺膜82自玻璃基板81剝離。In the second embodiment, only one of the edge portions of the rectangular object to be processed 8 is exposed to the upper flash light source 70. However, the light shielding plate 60 may be provided such that both sides of the edge portion are exposed to the flash light source 70. In this manner, only the edge portion of the interface between the glass substrate 81 and the polyimide film 82 is heated by the flash irradiation, and the bonding force is lowered, whereby the polyimide film 82 as the peeled layer can be easily used. The glass substrate 81 is peeled off.

而且,於第2實施形態中,亦可代替所使用的遮光板60而使用不將閃光完全遮斷而使閃光的量減少的濾光器(中性密度(neutral density,ND)濾光器等)。藉由將遮光板60設為ND濾光器,可將被處理體8的端緣部集中性地加熱,並且亦可藉由閃光將端緣部以外的區域加熱,從而於剝離步驟(階段S7)中可實現更容易的剝離。Further, in the second embodiment, a filter (neutral density (ND) filter, etc., which reduces the amount of flash without completely blocking the flash, may be used instead of the light-shielding plate 60 to be used. ). By setting the light shielding plate 60 as an ND filter, the edge portion of the object to be processed 8 can be heated centrally, and the region other than the edge portion can be heated by the flash to be in the peeling step (stage S7). ) can achieve easier peeling.

當以被處理體8的端緣部的兩邊以上暴露出的方式設置遮光板60時,只要根據該暴露出的端緣部的形狀配置閃光燈FL即可。例如,當以矩形的被處理體8的全部四邊的端緣部暴露出的方式設置遮光板60時,於閃光光源70以四邊形配置四根閃光燈FL。即,將閃光燈FL配置於與自遮光板60暴露出的被處理體8的端緣部對向的位置。When the light shielding plate 60 is provided so that both sides of the edge portion of the object to be processed 8 are exposed, the flash lamp FL may be disposed in accordance with the shape of the exposed end edge portion. For example, when the light shielding plate 60 is provided so that the end edges of all four sides of the rectangular object to be processed 8 are exposed, the four flash lamps FL are arranged in a quadrangular shape on the flash light source 70. In other words, the flasher FL is disposed at a position opposed to the edge portion of the object 8 to be processed exposed from the light shielding plate 60.

而且,於第2實施形態中,亦可以被處理體8的端緣部暴露出的方式設置遮光板60,並設置與第1實施形態相同的將多根閃光燈FL平行配置而成的閃光光源70。或者,亦可不設置遮光板60且僅將閃光燈FL配置於與被處理體8的端緣部對向的位置。Further, in the second embodiment, the light shielding plate 60 may be provided so that the end edge portion of the processing body 8 is exposed, and the flash light source 70 in which the plurality of flash lamps FL are arranged in parallel as in the first embodiment may be provided. . Alternatively, the light shielding plate 60 may be omitted and only the flasher FL may be disposed at a position opposed to the end edge portion of the object 8 to be processed.

於第3實施形態中,於矩形的被處理體8的全部四邊的端緣部形成了光吸收層85,但關於本發明的實施並不限定於此,只要於端緣部的一邊以上形成光吸收層85即可。如此般,光吸收層85藉由閃光照射而顯著昇溫,且藉由自該光吸收層85的熱傳導,玻璃基板81與聚醯亞胺膜82的界面的端緣部被集中性地加熱而結合力降低,從而亦可容易地將作為被剝離層的聚醯亞胺膜82自玻璃基板81剝離。In the third embodiment, the light absorbing layer 85 is formed on the edge portions of all four sides of the rectangular object to be processed 8. However, the implementation of the present invention is not limited thereto, and light is formed on one side or more of the edge portion. The absorption layer 85 is sufficient. In this manner, the light absorbing layer 85 is heated significantly by the flash irradiation, and the edge portion of the interface between the glass substrate 81 and the polyimide film 82 is concentratedly heated by heat conduction from the light absorbing layer 85. The force is lowered, and the polyimide film 82 as the peeled layer can be easily peeled off from the glass substrate 81.

而且,於第3實施形態中,於玻璃基板81的端緣部形成光吸收層85,但亦可代替此而於聚醯亞胺膜82的端緣部形成黑色的光吸收層85。或者,亦可於玻璃基板81及聚醯亞胺膜82兩者的端緣部形成黑色的光吸收層85。Further, in the third embodiment, the light absorbing layer 85 is formed on the edge portion of the glass substrate 81. Instead of this, a black light absorbing layer 85 may be formed on the edge portion of the polyimide film 82. Alternatively, a black light absorbing layer 85 may be formed on the edge portions of both the glass substrate 81 and the polyimide film 82.

而且,於第3實施形態中,光吸收層85並不限定於黑色,只要被著色為對閃光的吸收率成為規定值以上的顏色即可。In the third embodiment, the light absorbing layer 85 is not limited to black, and may be colored in a color having a light absorption rate equal to or greater than a predetermined value.

而且,亦可藉由將設置於閃光光源70的多個閃光燈FL的配置面積設為充分大於被處理體8者,而使被處理體8的端緣部的閃光的照度大於端緣部以外的區域(較端緣部靠內側的區域)。即,若使多個閃光燈FL的配置面積充分大於被處理體8,則對被處理體8的端緣部造成影響的閃光燈FL的根數增加,從而端緣部的閃光的照度相對增加。若如此,則與第3實施形態同樣地,藉由閃光照射而玻璃基板81與聚醯亞胺膜82的界面的端緣部被集中性地加熱,並使該界面的結合力降低,從而可容易地將作為被剝離層的聚醯亞胺膜82自玻璃基板81剝離。為了獲得此種被處理體8的端緣部的照度增加效果,需要將多個閃光燈FL的配置面積設為被處理體8的面積的1.2倍以上。Further, by setting the arrangement area of the plurality of flash lamps FL provided in the flash light source 70 to be sufficiently larger than the object to be processed 8, the illuminance of the flash of the edge portion of the target object 8 can be made larger than the edge portion. Area (the area on the inner side of the end edge). In other words, when the arrangement area of the plurality of flash lamps FL is sufficiently larger than the object to be processed 8, the number of the flash lamps FL that affect the edge portion of the object 8 is increased, and the illuminance of the flash of the edge portion is relatively increased. In the same manner as in the third embodiment, the edge portion of the interface between the glass substrate 81 and the polyimide film 82 is heated by the flash irradiation, and the bonding strength of the interface is lowered. The polyimide film 82 as a peeled layer is easily peeled off from the glass substrate 81. In order to obtain the illuminance increasing effect of the edge portion of the object to be processed 8, it is necessary to set the arrangement area of the plurality of flash lamps FL to 1.2 times or more the area of the object 8 to be processed.

而且,亦可將第2實施形態與第3實施形態組合。即,亦可於自第2實施形態的遮光板60暴露出的被處理體8的端緣部形成第3實施形態的黑色的光吸收層85。Further, the second embodiment can be combined with the third embodiment. In other words, the black light absorbing layer 85 of the third embodiment can be formed at the edge portion of the object 8 to be exposed which is exposed from the light shielding plate 60 of the second embodiment.

而且,於所述實施形態中,利用保持板20中內置的加熱器21,於閃光照射前將被處理體8加熱,但亦可代替加熱器21而利用鹵素燈將被處理體8加熱,亦可除加熱器21以外亦設置利用鹵素燈的加熱機構。當由多個支撐銷22支撐的被處理體8與保持板20的上表面的間隔大時,較佳為利用鹵素燈進行加熱,當樹脂層透明時,較佳為利用加熱器21進行加熱。而且,當僅藉由閃光照射便可使界面的結合力充分降低時,並非必須進行閃光照射前的利用加熱器21或鹵素燈進行的加熱。Further, in the above-described embodiment, the object to be processed 8 is heated by the heater 21 incorporated in the holding plate 20 before the flash irradiation, but the object to be processed 8 may be heated by the halogen lamp instead of the heater 21. A heating mechanism using a halogen lamp may be provided in addition to the heater 21. When the distance between the object to be processed 8 supported by the plurality of support pins 22 and the upper surface of the holding plate 20 is large, it is preferably heated by a halogen lamp, and when the resin layer is transparent, it is preferably heated by the heater 21. Further, when the bonding force of the interface can be sufficiently lowered by only the flash irradiation, it is not necessary to perform heating by the heater 21 or the halogen lamp before the flash irradiation.

而且,於所述實施形態中,於閃光光源70具備氙的閃光燈FL,但亦可代替其而使用氪等其他稀有氣體的閃光燈等使用了公知技術的各種光源。Further, in the above-described embodiment, the flash light source 70 is provided with a flash lamp FL, but a light source such as a flash lamp or the like which uses other rare gas may be used instead of a known light source.

《實施例》 以下,參照實施例對本發明加以詳細說明,但本發明並不限定於該些實施例。EXAMPLES Hereinafter, the present invention will be specifically described with reference to examples, but the present invention is not limited to the examples.

(第1實施例) [聚醯亞胺膜的形成] 準備下述表1所示的聚醯亞胺清漆A及聚醯亞胺清漆B。(First Example) [Formation of Polyimine Film] Polyimine varnish A and polyimine varnish B shown in Table 1 below were prepared.

利用以下所述的方法製備聚醯亞胺清漆B。即,於300 mL的可分離式燒瓶中加入聚醯亞胺清漆MP20A(三井化學股份有限公司製造)150.0 g,於室溫下向其中添加交聯起始溫度為200℃的交聯材11.8 g,不進行加熱·冷卻而使連接於三一電機(three-one motor)的攪拌翼以180 rpm旋轉來進行12小時攪拌,使交聯材溶解,藉此獲得清漆B。再者,Tg為於由塗膜所得的聚醯亞胺膜中使用動態黏彈性測定裝置進行測定而得的值。 Polyimine varnish B was prepared by the method described below. That is, 150.0 g of polyimine varnish MP20A (manufactured by Mitsui Chemicals, Inc.) was added to a 300 mL separable flask, and a crosslinked material having a crosslinking initiation temperature of 200 ° C was added thereto at room temperature. The heating and cooling were carried out, and the stirring blade connected to the three-one motor was rotated at 180 rpm for 12 hours to dissolve the crosslinked material, thereby obtaining the varnish B. Further, Tg is a value obtained by measuring a polyimide film obtained from a coating film using a dynamic viscoelasticity measuring device.

[玻璃基板與聚醯亞胺膜間的接著性的評價] 利用寬度為11.0 mm的塗敷器,以乾燥後的厚度成為20 μm的方式將各聚醯亞胺清漆塗敷於12.5 mm見方的玻璃基板,並使用烘箱以超過聚醯亞胺樹脂的玻璃轉移溫度且未滿熱硬化性的交聯材的交聯起始溫度的溫度加熱規定時間而進行乾燥,從而獲得試驗片。對該試驗片的一部分利用閃光燈退火(flash lamp annealing,FLA)裝置照射閃光。分別測定照射、非照射下的各試驗片的黏著強度(peel strength)並進行評價。照射能量設為5 J/cm2 ~15 J/cm2 。將結果示於下述表2。 [Evaluation of adhesion between glass substrate and polyimide film] Each polyimide varnish was applied to a 12.5 mm square by an applicator having a width of 11.0 mm so that the thickness after drying became 20 μm. The glass substrate was dried by heating at a temperature exceeding the glass transition temperature of the polyimide resin and the crosslinking initiation temperature of the thermosetting hardenable crosslinked material for a predetermined period of time to obtain a test piece. A part of the test piece was irradiated with a flash using a flash lamp annealing (FLA) device. The adhesion strength of each test piece under irradiation and non-irradiation was measured and evaluated. The irradiation energy is set to 5 J/cm 2 to 15 J/cm 2 . The results are shown in Table 2 below.

實施例1、實施例2及比較例1為添加了交聯材的例子。藉由對清漆A添加交聯材,如表1所示,因塑化效果而Tg自200℃下降至156℃。於以超過玻璃轉移溫度(glass transition temperature)的溫度、且以未滿交聯劑的交聯起始溫度的條件進行乾燥的實施例1、實施例2中,照射閃光前的黏著強度為0.7 kN/m、0.6 kN/m,獲得了充分的接著強度。另外,可藉由閃光照射使接著力充分降低,可自玻璃基板良好地剝離聚醯亞胺膜。另一方面,於以超過玻璃轉移溫度、且為交聯劑的交聯起始溫度以上的溫度進行乾燥的比較例1中,照射閃光前的黏著強度為0.3 kN/m,為實施例1、實施例2的一半以下的強度。藉由對該樣品實施閃光照射,接著力降低了1/3,但與實施例1、實施例2相比,接著力降低幅度小,接著力降低的效果低。Example 1, Example 2, and Comparative Example 1 are examples in which a crosslinked material was added. By adding a crosslinked material to the varnish A, as shown in Table 1, the Tg was lowered from 200 ° C to 156 ° C due to the plasticizing effect. In Example 1 and Example 2, which were dried at a temperature exceeding the glass transition temperature and at a crosslinking initiation temperature less than the crosslinking agent, the adhesion strength before the flash was 0.7 kN. /m, 0.6 kN/m, sufficient end strength is obtained. Further, the adhesion force can be sufficiently lowered by the flash irradiation, and the polyimide film can be favorably peeled off from the glass substrate. On the other hand, in Comparative Example 1 in which the glass transition temperature was higher than the crosslinking initiation temperature of the crosslinking agent, the adhesion strength before the flashing was 0.3 kN/m, which is Example 1. The strength of less than half of Example 2. By subjecting the sample to flash irradiation, the force was reduced by 1/3. However, compared with the first and second embodiments, the reduction in the force is small, and the effect of reducing the force is low.

比較例2~比較例4為不添加交聯材的例子。比較例2、比較例3於玻璃轉移溫度以下進行乾燥,因此,於照射閃光之前的階段未獲得黏著強度而未接著。另一方面,以大於玻璃轉移溫度的溫度進行乾燥的比較例4中,照射閃光前的黏著強度為0.9 kN/m,獲得了充分的接著強度。然而,於閃光的照射前後,接著強度未變化,無法將聚醯亞胺膜自支撐體剝離。 [產業上之可利用性]Comparative Examples 2 to 4 are examples in which no crosslinked material was added. In Comparative Example 2 and Comparative Example 3, drying was performed at a temperature below the glass transition temperature, and therefore, the adhesion strength was not obtained at the stage before the irradiation of the flash, and was not continued. On the other hand, in Comparative Example 4 which was dried at a temperature higher than the glass transition temperature, the adhesive strength before the irradiation of the flash was 0.9 kN/m, and sufficient adhesion strength was obtained. However, before and after the irradiation of the flash, the strength did not change, and the polyimide film could not be peeled off from the support. [Industrial availability]

本發明的聚醯亞胺膜的製造方法及電子機器的製造方法可適用於將被剝離層貼附於基板上而成的各種被處理體。尤其因可對基底膜安裝元件、容易賦予可撓性,故可較佳地用於平板顯示器(flat panel display,FPD)或電子紙等中使用的可撓性顯示器、可撓性元件、電子機器、太陽電池、燃料電池及半導體元件等電子機器中。The method for producing a polyimide film of the present invention and the method for producing an electronic device can be applied to various objects to be processed obtained by attaching a layer to be peeled off to a substrate. In particular, since the element can be attached to the base film and the flexibility is easily provided, it can be preferably used for a flexible display, a flexible element, an electronic device used in a flat panel display (FPD) or an electronic paper. In electronic devices such as solar cells, fuel cells, and semiconductor components.

1、1a、1b‧‧‧閃光燈退火裝置
3‧‧‧控制部
8‧‧‧被處理體
10‧‧‧腔室
11‧‧‧腔室側壁
12‧‧‧腔室底部
15‧‧‧處理空間
18‧‧‧腔室窗
20‧‧‧保持板
21‧‧‧加熱器
22‧‧‧支撐銷
40‧‧‧氣體供給機構
41‧‧‧處理氣體供給源
42‧‧‧供給配管
43‧‧‧供給閥
50‧‧‧排氣機構
51‧‧‧排氣裝置
52‧‧‧排氣配管
53‧‧‧排氣閥
60‧‧‧遮光板
70‧‧‧閃光光源
72‧‧‧反射器
74‧‧‧光學濾光器
81‧‧‧玻璃基板
82‧‧‧聚醯亞胺膜
83‧‧‧元件
85‧‧‧光吸收層
AR4‧‧‧箭頭
FL‧‧‧閃光燈
1, 1a, 1b‧‧‧ flashing annealing device
3‧‧‧Control Department
8‧‧‧Processed body
10‧‧‧ chamber
11‧‧‧Cell wall
12‧‧‧Bottom of the chamber
15‧‧‧Processing space
18‧‧‧Case window
20‧‧‧ Keep board
21‧‧‧ heater
22‧‧‧Support pins
40‧‧‧ gas supply mechanism
41‧‧‧Processing gas supply
42‧‧‧Supply piping
43‧‧‧Supply valve
50‧‧‧Exhaust mechanism
51‧‧‧Exhaust device
52‧‧‧Exhaust piping
53‧‧‧Exhaust valve
60‧‧ ‧ visor
70‧‧‧Flash light source
72‧‧‧ reflector
74‧‧‧Optical filter
81‧‧‧ glass substrate
82‧‧‧ Polyimine film
83‧‧‧ components
85‧‧‧Light absorbing layer
AR4‧‧‧ arrow
FL‧‧‧Flash

圖1 為表示第1 實施形態的閃光燈退火裝置的主要部分構成的圖。圖2 為表示閃光燈退火裝置的處理順序的流程圖。圖3 為表示被處理體的結構的剖面圖。圖4 為表示對被處理體照射了閃光的狀態的圖。圖5 為表示自玻璃基板剝離作為被剝離層的聚醯亞胺膜的情況的一例的圖。圖6 為表示第2 實施形態的閃光燈退火裝置的主要部分構成的圖。圖7 為自上方觀察遮光板而得的平面圖。圖8 為形成了光吸收層的被處理體的平面圖。圖9 為表示對第3 實施形態的被處理體照射了閃光的狀態的圖。圖10 為表示第4 實施形態的閃光燈退火裝置的主要部分構成的圖。圖11 為表示氙閃光燈的放射分光分佈的圖。Fig. 1 is a view showing the configuration of a main part of a flash lamp annealing apparatus according to a first embodiment. Fig. 2 is a flow chart showing the processing procedure of the flash lamp annealing apparatus. Fig. 3 is a cross-sectional view showing the structure of a target object. Fig. 4 is a view showing a state in which a subject is irradiated with a flash. FIG. 5 is a view showing an example of a case where a polyimide film which is a layer to be peeled off is peeled off from a glass substrate. Fig. 6 is a view showing the configuration of a main part of a flash lamp annealing apparatus according to a second embodiment; Fig. 7 is a plan view showing the visor viewed from above. Fig. 8 is a plan view of a to-be-processed body in which a light absorbing layer is formed. FIG. 9 is a view showing a state in which the object to be processed of the third embodiment is irradiated with a flash. Fig. 10 is a view showing the configuration of a main part of a flash lamp annealing apparatus according to a fourth embodiment. Fig. 11 is a view showing the radiation splitting distribution of the xenon flash lamp.

81‧‧‧玻璃基板(支撐體) 81‧‧‧Glass substrate (support)

82‧‧‧聚醯亞胺膜 82‧‧‧ Polyimine film

Claims (15)

一種聚醯亞胺膜的製造方法,包括: 步驟(a),將含有可溶性聚醯亞胺樹脂、熱硬化性的交聯材及溶劑的聚醯亞胺清漆塗佈於支撐體上,並於超過所述可溶性聚醯亞胺樹脂的玻璃轉移溫度且未滿熱硬化性的所述交聯材的交聯起始溫度的條件下進行乾燥而形成塗膜;以及 步驟(b),將經由步驟(a)而得的聚醯亞胺膜於促進所述交聯材的交聯反應後自所述支撐體剝離。A method for producing a polyimide film, comprising: step (a), applying a polyimide pigment varnish containing a soluble polyimide resin, a thermosetting crosslinked material, and a solvent to a support, and Drying to form a coating film under conditions of a glass transition temperature of the soluble polyamidene resin and a crosslinking initiation temperature of the crosslinked material not having thermosetting property; and step (b), passing through the step The polyimine film obtained in (a) is peeled off from the support after promoting the crosslinking reaction of the crosslinked material. 如申請專利範圍第1項所述的聚醯亞胺膜的製造方法,其中於步驟(b)中,自支撐體側對所述聚醯亞胺膜照射閃光。The method for producing a polyimide film according to claim 1, wherein in the step (b), the polyimide film is irradiated with a flash from the support side. 一種電子機器的製造方法,其於基底膜上形成元件,且 作為所述基底膜,至少具有聚醯亞胺膜, 所述電子機器的製造方法包括: 步驟(a),將含有可溶性聚醯亞胺樹脂、熱硬化性的交聯材及溶劑的聚醯亞胺清漆塗佈於支撐體上,並於超過所述可溶性聚醯亞胺樹脂的玻璃轉移溫度且未滿熱硬化性的所述交聯材的交聯起始溫度的條件下進行乾燥而形成塗膜; 步驟(c),於藉由步驟(a)而得的所述聚醯亞胺膜上形成所述元件;以及 步驟(b),將經由步驟(c)而得的所述聚醯亞胺膜於促進所述交聯材的交聯反應後自所述支撐體剝離。A method of manufacturing an electronic device, comprising: forming a component on a base film, and having at least a polyimide film as the base film, the method of manufacturing the electronic device comprising: the step (a), comprising a soluble polyazide A polyimide resin, a thermosetting crosslinked material, and a solvent-polymerized polyimide varnish are coated on the support and are at a temperature exceeding the glass transition temperature of the soluble polyimide resin and less than the thermosetting property. Forming a coating film under drying conditions of the crosslinking temperature of the joint; step (c), forming the element on the polyimide film obtained by the step (a); and step (b) The polyimine film obtained through the step (c) is peeled off from the support after promoting the crosslinking reaction of the crosslinked material. 如申請專利範圍第3項所述的電子機器的製造方法,其中步驟(c)包括利用氣相成長法的薄膜形成製程。The method of manufacturing an electronic device according to claim 3, wherein the step (c) comprises a film forming process using a vapor phase growth method. 如申請專利範圍第3項所述的電子機器的製造方法,其中步驟(b)自支撐體側對所述聚醯亞胺膜照射閃光。The method of manufacturing an electronic device according to claim 3, wherein the step (b) irradiates the polyimide film with a flash from the support side. 如申請專利範圍第5項所述的電子機器的製造方法,其中將所述閃光集中性地照射至形成於所述支撐體上的所述聚醯亞胺膜的端緣部。The method of manufacturing an electronic device according to claim 5, wherein the flash is concentratedly irradiated onto an edge portion of the polyimide film formed on the support. 如申請專利範圍第5項所述的電子機器的製造方法,其中於俯視時,在與所述聚醯亞胺膜的端緣部對向的所述支撐體上設置吸收所述閃光的光吸收層。The method of manufacturing an electronic device according to claim 5, wherein, in a plan view, light absorption for absorbing the flash is provided on the support body opposed to an edge portion of the polyimide film Floor. 如申請專利範圍第5項所述的電子機器的製造方法,其選擇性地照射所述閃光的出射光中所述聚醯亞胺膜的光吸收率高的區域。The method for producing an electronic device according to claim 5, which selectively irradiates a region of the emitted light of the flash that has a high light absorptivity of the polyimide film. 如申請專利範圍第8項所述的電子機器的製造方法,其利用濾光器截止所述閃光的出射光中的所述聚醯亞胺膜的光吸收率低的區域。The method of manufacturing an electronic device according to claim 8, wherein the filter is used to cut off a region of the polyimide light having a low light absorptivity in the emitted light of the flash. 如申請專利範圍第8項所述的電子機器的製造方法,其中所述聚醯亞胺膜的光吸收率高的區域為紫外區域。The method for producing an electronic device according to claim 8, wherein the region in which the light absorption rate of the polyimide film is high is an ultraviolet region. 如申請專利範圍第9項所述的電子機器的製造方法,其中所述濾光器截止400 nm以上的波長。The method of manufacturing an electronic device according to claim 9, wherein the filter cuts off a wavelength of 400 nm or more. 如申請專利範圍第5項所述的電子機器的製造方法,其於步驟(c)之前更具備將形成有所述聚醯亞胺膜的所述支撐體的周圍的環境減壓的步驟(d), 於照射所述閃光時,使存在於所述聚醯亞胺膜與所述支撐體的界面的氣泡膨脹。The method for producing an electronic device according to claim 5, further comprising the step of depressurizing the environment around the support body on which the polyimide film is formed before the step (c) (d) When the flash is irradiated, the bubbles existing at the interface between the polyimide film and the support are expanded. 如申請專利範圍第3項至第12項中任一項所述的電子機器的製造方法,其中所述元件為選自可撓性顯示器、可撓性元件、半導體元件、太陽電池及燃料電池所組成的組群中的至少一個。The method of manufacturing an electronic device according to any one of claims 3 to 12, wherein the element is selected from the group consisting of a flexible display, a flexible element, a semiconductor element, a solar cell, and a fuel cell. At least one of the group consisting of. 一種塗膜的剝離方法,包括: 步驟(a),將含有可溶性聚醯亞胺樹脂、熱硬化性的交聯材及溶劑的聚醯亞胺清漆塗佈於支撐體上,並於超過所述可溶性聚醯亞胺樹脂的玻璃轉移溫度且未滿熱硬化性的所述交聯材的交聯起始溫度的條件下進行乾燥而形成塗膜;以及 步驟(b),將經由步驟(a)而得的聚醯亞胺膜於促進所述交聯材的交聯反應後自所述支撐體剝離。A method for peeling off a coating film, comprising: step (a), applying a polyimide varnish containing a soluble polyimide resin, a thermosetting crosslinked material, and a solvent to a support, and exceeding Drying to form a coating film under conditions of a glass transition temperature of the soluble polyimide resin and a crosslinking initiation temperature of the crosslinked material not having thermosetting property; and step (b), via step (a) The obtained polyimide film is peeled off from the support after promoting the crosslinking reaction of the crosslinked material. 如申請專利範圍第14項所述的塗膜的剝離方法,其於步驟(b)中,自支撐體側對所述聚醯亞胺膜照射閃光。The method for peeling off a coating film according to claim 14, wherein in the step (b), the polyimide film is irradiated with a flash from the side of the support.
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CN109791238A (en) * 2016-09-30 2019-05-21 住友化学株式会社 The manufacturing method of optical film and optical film
CN109791238B (en) * 2016-09-30 2022-02-22 住友化学株式会社 Optical film and method for producing optical film

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