TW201530810A - Light emitting element - Google Patents

Abstract

Provided is a light emitting element capable of suppressing generation of voids in a semiconductor without deteriorating crystal qualities of the semiconductor. This light emitting element is provided with: a sapphire substrate having recesses and projections that are formed to be scattered in a surface at a pitch of 1 [mu]m or less; and a semiconductor laminated section formed on the surface of the sapphire substrate, said semiconductor laminated section including a light emitting layer, and being formed of a III nitride semiconductor. At the interface between the sapphire substrate and the semiconductor laminated section, there are diffraction operations of light emitted from the light emitting layer. The density of voids having a size smaller than the pitch of the recesses or projections, said voids being in the semiconductor laminated section close to the sapphires substrate, is set at 1.0 * 10<SP>2</SP>/cm2-2.3 * 10<SP>7</SP>/cm2.

Description

Light-emitting element

The present invention relates to a light emitting device.

An LED element having a member formed on a surface of a sapphire substrate including a light-emitting layer and a group III nitride semiconductor formed on the surface side of the sapphire substrate and emitted from the light-emitting layer is known. The light is incident, and a diffraction surface having a concave portion or a convex portion is formed at a period smaller than an optical wavelength of the light than a coherence length of the light, and a diffraction surface formed on the back side of the substrate is diffracted The surface-reflected light is reflected and incident on the Al-reflecting film of the diffraction surface (see Patent Document 1). In the LED element, light transmitted by the diffraction action is incident on the diffraction surface, and the diffraction surface is again transmitted by the diffraction effect, and the light is taken out to the element in a plurality of modes. external.

[Patent Document 1] International Publication No. 2011/027679

However, the inventors have reviewed the improvement of the crystal quality of the semiconductor by forming a void of a predetermined density in the vicinity of the sapphire substrate in the semiconductor laminate portion. However, there is a concern about the effect of giving a diffraction effect due to the formation of voids.

The present invention has been made in view of the above circumstances, and an object thereof is to provide a light-emitting element which can improve the crystal quality of a semiconductor due to a void and suppress the influence of imparting a diffraction failure.

In order to achieve the above object, the present invention provides a light-emitting element comprising: a sapphire substrate having a concave portion or a convex portion dispersed at a period of 1 μm or less on a surface thereof; and a light-emitting layer formed on the surface of the sapphire substrate; a semiconductor layered portion formed of a group nitride semiconductor, wherein a diffraction effect of light emitted from the light-emitting layer is obtained at an interface between the sapphire substrate and the semiconductor layered portion, wherein the concave portion is included in the vicinity of the sapphire substrate in the semiconductor layered portion Or the dimension of the convex portion is small, and the density is 2.6 × 10 ² /cm ² or more and 2.3 × 10 ⁷ /cm ² or less.

In the above light-emitting element, the density of the voids may be 1.0 × 10 ⁷ /cm ² or less.

In the above light-emitting device, the semiconductor build-up portion may have a buffer layer formed on the sapphire substrate side, and the buffer layer may be formed by a sputtering method.

In the above light-emitting device, the semiconductor laminate portion may have a buffer layer formed on the sapphire substrate side, and the buffer layer may be formed of AlN.

In the above light-emitting element, the period of the concave portion or the convex portion is P, and when the peak wavelength of light emitted from the light-emitting layer is λ, 1/2 × λ ≦ P ≦ 16 / 9 × λ is satisfied. The relationship is also ok.

According to the light-emitting element of the present invention, it is possible to improve the crystal quality of the semiconductor due to the voids and to suppress the influence of the diffraction failure.

Fig. 1 is a schematic cross-sectional view showing an LED element according to a first embodiment of the present invention. As shown in FIG. 1, the LED element 1 is formed with a semiconductor laminate portion 19 composed of a group III nitride semiconductor layer on the surface of the sapphire substrate 2. Here, the refractive index of sapphire is 1.78, and the refractive index of the group III nitride semiconductor layer is 2.52. The LED element 1 is of a flip chip type, and light is mainly taken out from the back side of the sapphire substrate 2. The semiconductor build-up portion 19 has, in order from the sapphire substrate 2 side, a buffer layer 10, an n-type GaN layer 12, a light-emitting layer 14, and an electron blocking layer (e l e c t r o n b l o c k i n g l a y e r ) 16. The p-type GaN layer 18. A p-side electrode 27 is formed on the p-type GaN layer 18, and an n-side electrode 28 is formed on the n-type GaN layer 12.

As shown in FIG. 1, the buffer layer 10 is made of AlN and is formed on the surface of the sapphire substrate 2. The buffer layer 10 is formed by a sputtering method. An n-type GaN layer 12 as a first conductivity type layer is formed on the buffer layer 10 and is made of n-GaN. The light-emitting layer 14 is formed on the n-type GaN layer 12 and is made of GalnN/GaN, and emits blue light by injection of electrons and holes. In the present embodiment, the peak wavelength of the light emission of the light-emitting layer 14 is 450 nm.

The electron blocking layer 16 is formed on the light-emitting layer 14 and is made of p-AlGaN. A p-type GaN layer 18 as a second conductivity type layer is formed on the electron blocking layer 16 and is made of p-GaN. The n-type GaN layer 12 to the p-type GaN layer 18 are formed by a MOCVD (Metal Organic Chemical Vapor Deposition) method. In addition, at least the first conductive type layer, the active layer and the second conductive type layer are applied to the first conductive type layer and the second conductive type layer by voltage, and the electron and the hole are used. When the light is emitted from the active layer by recombination, the layer configuration of the semiconductor layer is arbitrary.

The surface of the sapphire substrate 2 constitutes a diffraction surface 2a. The surface of the sapphire substrate 2 is formed with a flat portion 2b and a plurality of convex portions 2c that are periodically formed in the flat portion 2b. The shape of each convex portion 2c may be a truncated cone shape such as a truncated cone or a polygonal pyramid, or a truncated cone shape such as a truncated cone or the like. Each convex portion 2c is designed to diffract light emitted from the light-emitting layer 14. In the present embodiment, the verticalization of light can be obtained by the convex portions 2c arranged periodically. Here, the verticalization of light means that the intensity distribution of light is a direction perpendicular to the interface between the sapphire substrate 2 and the semiconductor laminate portion 19 after being reflected and transmitted by the diffraction surface, before being incident on the diffraction surface.

Fig. 2 is an explanatory view showing a diffraction action of light in an interface having different refractive indexes, wherein (a) shows a state of reflection at the interface, and (b) shows a state of transmission through the interface. Here, Bragg's condition of diffraction, in the case where light is reflected at the interface, the condition that the incident angle θ _in reflection angle θ _ref should satisfy is P·n1·(sinθ _in -sinθ _ref )= m・λ・・(1) Here, P is a period of a concave portion or a convex portion, n1 is a refractive index of a medium on the incident side, λ is a wavelength of incident light, and m is an integer. When light is incident on the sapphire substrate 2 by the semiconductor buildup portion 19, n1 becomes the refractive index of the group III nitride semiconductor. As shown in FIG. 2(a), light incident on the interface that satisfies the reflection angle θ _{ref of the} above formula (1) is reflected.

On the other hand, in the case of the diffraction condition of Bragg, when the light is transmitted through the interface, the condition that the incident angle θ _{in the} transmission angle θ _out should satisfy is P·(n1·(sinθ _in -n2·sinθ _out )=m (2) Here, n2 is the refractive index of the medium on the emission side, and m' is an integer. For example, when light is incident on the sapphire substrate 2 by the semiconductor laminate portion 19, n2 becomes the refractive index of sapphire. As shown in FIG. 2(b), light incident on the interface that satisfies the transmission angle θ _{out of the} above formula (2) is transmitted.

3 is a view showing an incident angle of light incident on the interface from the side of the semiconductor layer in the interface between the group III nitride semiconductor layer and the sapphire substrate at a period of 500 nm in the period of the recess or the projection, and by diffraction at the interface A graph of the relationship of the transmitted angles produced. 4 is a view showing an incident angle of light incident on the interface from the side of the semiconductor layer in the interface between the group III nitride semiconductor layer and the sapphire substrate at a period of 500 nm in the period of the recess or the projection, and by winding at the interface A graph of the relationship between the angles of reflection produced by the action.

The light incident on the diffraction surface 2a has a critical angle of total reflection as a general flat surface. The critical angle at the interface between the GaN-based semiconductor layer and the sapphire substrate 2 is 45.9 Å. As shown in Fig. 3, in the region exceeding the critical angle, transmission in the diffraction mode satisfying the diffraction conditions of the above formula (2), m' = 1, 2, 3, 4 is possible. Further, as shown in FIG. 4, in the region exceeding the critical angle, it is possible to reflect in the diffraction mode of m=1, 2, 3, and 4 satisfying the diffraction condition of the above formula (1). When the critical angle is 45.9 Å, the optical output exceeding the critical angle is about 70%, and the light output not exceeding the critical angle becomes about 30%. That is to say, the light taken out of the region exceeding the critical angle greatly contributes to an improvement in the light extraction efficiency of the LED element 1.

Here, in a region where the transmission angle θ _{out is} smaller than the incident angle θ _in , the angle of the light transmitted through the diffraction surface 2 a changes to be perpendicular to the interface between the sapphire substrate 2 and the group III nitride semiconductor layer. This area is indicated by hatching in FIG. As shown in FIG. 3, for the light transmitted through the diffraction surface 2a, in the region exceeding the critical angle, the light of the diffraction pattern of m'=1, 2, 3 changes to be nearly vertical at all angles. The light of the diffraction mode of m'=4 does not become nearly vertical in a part of the angular range, but the influence of the light having a large number of diffractions is small, so that the influence is small, and the angle is substantially changed in the angular domain of the part. Near vertical. In other words, the intensity distribution of the light transmitted through the diffraction surface 2a on the side of the sapphire substrate 2 is biased toward the semiconductor laminate portion 19 and the sapphire substrate 2 as compared with the intensity distribution of the light incident on the diffraction surface 2a on the semiconductor laminate portion 19 side. The vertical direction of the interface.

Further, in a region where the reflection angle θ _{ref is} smaller than the incident angle θ _in , the angle of the light reflected on the diffraction surface 2 a changes to be perpendicular to the interface between the sapphire substrate 2 and the group III nitride semiconductor layer. This area is indicated by hatching in FIG. As shown in FIG. 4, for the light reflected on the diffraction surface 2a, in the region exceeding the critical angle, the light of the diffraction mode of m=1, 2, 3 changes to be nearly vertical at all angles. The light of the diffraction mode of m=4 does not become nearly vertical in a part of the angular range, but the influence of the light having a large number of diffraction times is small, so that the influence is small, and the angle is substantially changed to be close in the angular domain of the part. vertical. In other words, the intensity distribution of the light emitted by the diffraction surface 2a by the reflection on the semiconductor laminate portion 19 side is biased toward the semiconductor laminate portion as compared with the intensity distribution of the light incident on the diffraction surface 2a on the semiconductor laminate portion 19 side. 19 is perpendicular to the interface of the sapphire substrate 2.

Fig. 5 is an explanatory view showing a traveling direction of light in the inside of the element. As shown in FIG. 5, among the light emitted from the light-emitting layer 14, light incident on the sapphire substrate 2 beyond the critical angle passes through the diffraction surface 2a and the reflection ratio is closer to the sapphire substrate 2 when it is incident on the diffraction surface 2a. . That is, the light transmitted through the diffraction surface 2a is incident on the back surface of the sapphire substrate 2 in a state of being changed toward a near vertical angle. Then, the light reflected by the diffraction surface 2a is reflected by the p-side electrode 27 and the n-side electrode 28 in a state of being changed toward the vertical angle, and then incident on the diffraction surface 2a again. The incident angle at this time is also nearly perpendicular to the previous incident angle. As a result, the light incident on the back surface of the sapphire substrate 2 can be regarded as being nearly vertical.

Fig. 6 is a partially enlarged schematic cross-sectional view showing the LED element. As shown in FIG. 6, the p-side electrode 27 has a diffusion electrode 21 formed on the p-type GaN layer 18, and a dielectric multilayer film 22 formed in a predetermined region on the diffusion electrode 21, and is formed on A metal electrode 23 on the dielectric multilayer film 22. The diffusion electrode 21 is formed entirely on the p-type GaN layer 18, and is made of a transparent material such as ITO (Indium Tin Oxide). Further, the dielectric multilayer film 22 is formed by repeating a plurality of pairs of the first material 22a and the second material 22b having different refractive indices. The dielectric multilayer film 22 such as the first material 22a can have ZrO ₂ (refractive index: 2.18), the second material 22b can have SiO ₂ (refractive index: 1.46), and the logarithm can be 5. Further, it is also possible to form the dielectric multilayer film 22 using a material different from ZrO ₂ and SiO ₂ , for example, AlN (refractive index: 2.18), Nb ₂ O ₃ (refractive index: 2.4), and Ta ₂ O ₃ (refractive index). : 2.35) etc. The metal electrode 23 covers the dielectric multilayer film 22 and is made of a metal material such as Al. The metal electrode 23 is electrically connected to the diffusion electrode 21 via a via hole 22c formed in the dielectric multilayer film 22.

As shown in FIG. 6, the n-side electrode 28 is formed by etching the p-type GaN layer 18 to the n-type GaN layer 12 on the exposed n-type GaN layer 12. The n-side electrode 28 has a diffusion electrode 24 formed on the n-type GaN layer 12, a dielectric multilayer film 25 formed in a predetermined region on the diffusion electrode 24, and a metal electrode formed on the dielectric multilayer film 25. 26. The diffusion electrode 24 is formed entirely on the n-type GaN layer 12, and is made of a transparent material such as ITO (Indium Tin Oxide). Further, the dielectric multilayer film 25 is formed by repeating a plurality of pairs of the first material 25a and the second material 25b having different refractive indices. The dielectric multilayer film 25 can have, for example, ZrO ₂ (refractive index: 2.18), the second material 25b can have SiO ₂ (refractive index: 1.46), and the logarithm can be 5. Further, the dielectric multilayer film 25 may be formed using a material different from ZrO ₂ and SiO ₂ , for example, AlN (refractive index: 2.18), Nb ₂ O ₃ (refractive index: 2.4), and Ta ₂ O ₃ (refractive index) may be used. : 2.35) etc. The metal electrode 26 is covered with the dielectric multilayer film 25, and is made of a metal material such as Al. The metal electrode 26 is electrically connected to the diffusion electrode 24 via a via hole 25c formed in the dielectric multilayer film 25.

In the LED element 1, the p-side electrode 27 and the n-side electrode 28 constitute a reflection portion. The p-side electrode 27 and the n-side electrode 28 have higher angular reflectivities toward the vertical direction, respectively. The reflection portion is reflected on the diffraction surface 2a of the sapphire substrate 2 in addition to the light directly incident from the light-emitting layer 14, and the light whose angle is changed to be perpendicular to the interface also enters the reflection portion. In other words, when the intensity distribution of the light incident on the reflecting portion is compared with the case where the surface of the sapphire substrate 2 is a flat surface, the intensity is relatively close to the vertical.

FIG. 7 is a graph showing an example of the reflectance of the reflection portion. In the example of FIG. 7, the logarithm of the dielectric multilayer film formed on the ITO by the combination of ZrO ₂ and SiO ₂ is 5, and the Al layer is formed by being superposed on the dielectric multilayer film. As shown in FIG. 7, a reflectance of 98% or more is achieved in an angle range of an incident angle of 0 to 45 degrees. Moreover, a reflectance of 90% or more is achieved in an angle range in which the incident angle is from 0 to 75 degrees. As such, the combination of the dielectric multilayer film and the metal layer is a reflective condition that is advantageous for light having an interface close to vertical. Further, it was confirmed that the case where only the Al layer was formed on the ITO did not depend on the incident angle, and it became a certain reflectance of about 84%.

Next, the sapphire substrate 2 will be described in detail with reference to FIG. Fig. 8 is a view showing a sapphire substrate, (a) is a schematic perspective view, and (b) is a schematic explanatory view showing an A-A cross section.

As shown in FIG. 8(a), the diffraction surface 2a is formed by arranging the positions of the apexes of the equilateral triangles in a plan view in a plane at a predetermined period in the intersection of the virtual triangular lattices. Further, the term "cycle" as used herein refers to the distance of the peak position of the height in the adjacent convex portion 2c. In the present embodiment, when the period of the convex portion 2c is P and the peak wavelength of the light emitted from the light-emitting layer 14 is λ, the following relationship is satisfied: 1/2 × λ ≦ P ≦ 16 / 9 × λ is set. The period of the convex portion 2c. It is preferable that the relationship is 23/45 × λ ≦ P ≦ 14 / 9 × λ. Further, the period of the convex portion 2c is set such that the transmitted diffracted light includes at least two times of diffracted light, and does not include five times of diffracted light. Moreover, the period of the convex portion 2c is set such that the reflected diffracted light contains at least 3 times of diffracted light.

However, the inventors have reviewed the improvement of the crystal quality of the semiconductor by forming a void having a predetermined density in the vicinity of the sapphire substrate 2 in the semiconductor build-up portion 19. When the concave portion or the convex portion 2c which is dispersed at a period of 1 μm or less is formed on the sapphire substrate 2, it is expected that the crystal quality of the semiconductor is improved by forming the void. However, since the influence of the diffraction action caused by the formation of the void is feared, the influence of the diffraction effect by the void is investigated. In addition, the gaps referred to herein are those having an optical influence, and the number of nanometers to several tens of nanometers is not considered because the influence of optics can be ignored.

Fig. 9 is a table showing the relationship between the period of the convex portion and the void density. The measurement of the void density is carried out in the case where the buffer layer is grown by GaN at a low temperature by the MOCVD method, and in the case where the buffer layer is formed of AlN by sputtering. Further, the thickness of the buffer layer was 80 nm. As shown in FIG. 9, compared with the case where the buffer layer 10 is GnN, the density of the voids is reduced in the case where the buffer layer 10 is AlN. Further, it was confirmed that the smaller the period of the convex portion 2c, the larger the void density. That is, the void in the semiconductor is considered to be caused by the convex portion 2c which is periodically formed. When the buffer layer 10 is grown by GaN by MOCVD, the void density exceeds 1.0 × 10 ⁷ /cm ² regardless of the period of the convex portion 2c. On the other hand, when the buffer layer 10 is AlN formed by sputtering, the void density is 1.0 × 10 ⁷ /cm ² or less. In addition, in the case of the accuracy of the optical microscope for the measurement, when the void density is 1.0 × 10 ⁷ /cm ² or less, since the correct value cannot be grasped, it is displayed at 1.0 × 10 ⁷ /cm ² or less in Fig. 9 .

As described above, the void density of the buffer layer 10 changes by changing the material of the buffer layer 10. Further, the void density can be changed by changing the film thickness of the buffer layer 10. Fig. 10 is a graph showing the relationship between the film thickness of the buffer layer and the void density. Here, the buffer layer 10 was measured by AlN formed by a sputtering method. Further, the annealing time to be described later was 5 minutes. As shown in FIG. 10, when the film thickness of the buffer layer 10 is increased, the void density is lowered, and when the film thickness of the buffer layer 10 is made small, the void density is increased.

Further, when the buffer layer 10 is formed by sputtering, the void density can be changed by the presence or absence of annealing after sputtering. In the present embodiment, the buffer layer 10 is formed by sputtering at, for example, 400 ° C to 700 ° C, for example, for 3 minutes to 10 minutes, annealing is performed at, for example, 900 ° C to 1100 ° C, and the semiconductor laminate portion 19 is continuously formed as described above. LED element 1.

Fig. 11 is a graph showing the relationship between the wavelength and the transmittance in the LED element. The transmittance is measured by irradiating the sapphire substrate 2 of the LED element 1 with light of a predetermined wavelength in a vertical direction. Here, the sample body 1 was made of AlN having a buffer layer 10 annealing time of 5 minutes by sputtering, and the thickness of the buffer layer 10 was 80 nm. Further, the sample body 2 was made of GaN in which the buffer layer 10 was grown at a low temperature by an MOCVD method, and the thickness of the buffer layer was 25 nm. Each sample body has a period of the convex portion 2c of 460 nm. Further, in GaN grown at a low temperature by the MOCVD method, even if the thickness of the buffer layer is changed, the void density is substantially constant.

As shown in FIG. 11, when the buffer layer 10 is made of AlN formed by a sputtering method, it is understood that the transmittance is improved as compared with the case of GaN which is grown at a low temperature by the MOCVD method. Specifically, in light of a wavelength of 450 nm, the transmittance is improved by 3.2%. This point is considered to be caused by the occurrence of voids in the semiconductor laminate portion 19. Further, as a result of actually producing an LED element using each sample body, the light extraction efficiency was improved by 9.4%.

When the buffer layer 10 is made of AlN formed by a sputtering method, the reason why the generation of voids is suppressed is considered as follows. First, when the buffer layer is formed by the sputtering method, since the raw material is directed from the target toward the sapphire substrate 2, the buffer layer 10 is uniformly formed between the convex portions 2c of the sapphire substrate 2. Further, since AlN is suppressed by migration of the buffer layer 10 compared with GaN, generation of voids is suppressed.

Further, an experiment was conducted in which a plurality of LED elements 1 which change the gap density were produced, and how the light extraction efficiency was changed. Fig. 12 is a graph showing the relationship between the void density and the light extraction efficiency in the LED element. Each of the LED elements 1 is AlN formed by a sputtering method on the buffer layer 10, and the period of the convex portion 2c is 460 nm. The density of the voids is changed by changing the film thickness of the buffer layer 10. Specifically, the void density is 1.0 × 10 / cm ² , 2.6 × 10 ² /cm ² , 1.3 × 10 ⁴ /cm ² , 2.3 × 10 ⁷ /cm ² , and 5.0 × 10 ⁸ /cm ² . Further, the measurement of the void density was performed by etching the semiconductor laminate portion by a dry etching apparatus to expose the voids, and using an electron microscope. According to this, it is possible to obtain data with higher accuracy than the data shown in FIG.

12, the void density to 2.3 × 10 ⁷ / cm ² until the light extraction efficiency is relatively good, be a 5.0 × 10 ⁸ / cm ^2, light extraction efficiency is lowered. That is to say, it can be understood that as the void density becomes higher, the light extraction efficiency is lowered.

Fig. 13 is a graph showing the relationship between the void density and the penetration difference density of the semiconductor laminate portion. As shown in Fig. 13, the through-difference density was 1.0 × 10 ⁹ /cm ² at a void density of 1.0 × 10 /cm ² and 4.0 × 10 ⁸ /cm ² at 2.6 × 10 ² /cm ² at 1.3. × 10 ⁴ cm ² hour / was 3.2 × 10 ⁸ / cm ^2, at 2.3 × 10 ^{7 2} when / cm is 2.2 × 10 ⁸ / cm ^2, at 5.0 × 10 ^{8 2} when / cm is 1.6 × 10 ⁸ / cm ² . As shown in Fig. 13, the void density is 2.6 × 10 ² /cm ² or more, and the through-displacement density is relatively low, and once it becomes 1.0 × 10 / cm ² , the penetration difference density becomes high. That is to say, it can be understood that as the void density becomes lower, the through-difference density becomes higher.

In the vicinity of the sapphire substrate 2 of the semiconductor laminated portion 19, the gap is formed to be smaller than the period of the convex portion 2c, and the density is 2.6 × 10 ² /cm ² or more and 2.3 × 10 ⁷ /cm ² or less. Increasing the crystal quality of the semiconductor due to the voids and suppressing the influence of the diffraction failure.

Fig. 14 is a table showing the relationship between the thickness of the buffer layer and the transmittance. In Fig. 14, [FSS] is an LED element 1 which uses a sapphire substrate 2 on which irregularities are not formed, and [MPSS] is an LED element 1 in which a sapphire substrate 2 in which a convex portion is formed as in the present embodiment is used. Each of the sample bodies had a period of 460 nm in which the convex portion 2c was formed, and the buffer layer 10 was changed in thickness to 20 nm, 40 nm, 60 nm, and 80 nm by AlN formed by sputtering. As shown in Fig. 14, the transmittance is substantially constant in [FSS], but in [MPSS], the thickness of the buffer layer 10 becomes 20 nm, and the transmittance is lowered. This point is considered to be because the flatness of the surface of each semiconductor layer in the semiconductor build-up portion 19 is lost. As a result, the flatness of the surface of each semiconductor layer is lost, and the crystal quality of the semiconductor is deteriorated.

Fig. 15 is a view showing the light distribution characteristics of the LED elements in polar coordinates. Here, the sample body 3 is [MPSS], and the buffer layer 10 is made of GaN which is grown at a low temperature by the MOCVD method, and the thickness of the buffer layer 10 is 25 nm. The sample body 3 had a void density of 5.0 × 10 ⁷ /cm ² . Further, the sample body 4 was [FSS], and the buffer layer 10 was made of GaN grown at a low temperature by an MOCVD method, and the thickness of the buffer layer 10 was 25 nm. Further, the sample body 5 was made of AlN formed by a sputtering method for the buffer layer 10, and the thickness of the buffer layer 10 was 60 nm. The sample body 5 had a void density of 1.0 × 10 ⁴ /cm ² . Further, in each of the drawings of Fig. 15, the direction perpendicular to the sapphire substrate 2 is 0 degree (optical axis). Further, the emission wavelength of the light-emitting layer 14 of each sample body was 450 nm.

As shown in the sample body 4, when the convex portion 2c is not formed on the surface of the sapphire substrate 2, light is emitted isotropically emitted by the LED element 1 or the like. On the other hand, as shown in the sample body 3 and the sample body 5, the light distribution characteristics are changed by forming the convex portion 2c which can obtain the diffraction action. Specifically, as shown in the sample body 5, in the light distribution characteristic, there is a higher intensity than the others in a specific angle range. It was found that the place was caused by ±1 time of light transmitted through the diffraction surface after being reflected by the reflection portion.

Here, the light distribution characteristic of the sample body 3 is different from the sample body 5 in consideration of the influence of scattering of light by the voids formed in the semiconductor layer stacking portion 19. In other words, when the void density exceeds 1.0 × 10 ⁷ /cm ² , the influence of scattering becomes large, and the light distribution characteristics of the sample body 3 become. As the influence of such scattering becomes larger, it becomes disadvantageous for the LED element 1 which takes out light by the diffraction action.

Further, the light distribution characteristics of the light taken out by the LED element 1 will be described based on simulations with reference to FIGS. 16 to 21 . Fig. 16 is a view showing the light distribution characteristics of the LED element in the polar coordinates, (a) showing a state in which the convex portion is not formed on the sapphire substrate, and (b) to (h) showing the state in which the convex portion is formed on the sapphire substrate. Figure. Here, (b) is a graph showing a period of 200 nm, (c) is a graph showing a period of 225 nm, (d) is a graph showing a period of 320 nm, (e) is a graph showing a period of 450 nm, and (f) is a graph showing a period of 450 nm. The display period is a graph of 600 nm, (g) is a graph showing a period of 700 nm, and (h) is a graph showing a period of 800 nm. Further, in each of the graphs of Fig. 16, the direction perpendicular to the sapphire substrate is 0 degree (optical axis).

Here, in order to confirm whether or not the calculated value of the simulation is appropriate, the calculated value obtained by the simulation and the measured value of the sample body are compared and reviewed. This review was carried out by comparing the integrated intensity calculated by the simulation with the measured value obtained by illuminating the sample body. Fig. 17 is a table showing calculated values and measured values of the respective substrates. In Fig. 17, [FSS] is a substrate on which irregularities are not formed, [PSS] is a substrate on which linear irregularities are formed, and [MPSS] is a substrate on which concave portions or convex portions are formed in the present embodiment. As shown in Fig. 17, the calculated value of any substrate is substantially the same as the measured value, which can be understood as the calculated value of the simulation and the like.

The light distribution characteristics of FIG. 16 were reviewed. As shown in FIG. 16(a), when the convex portion 2c is not formed on the surface of the sapphire substrate 2, light is emitted from the LED element 1 or the like. On the other hand, as shown in FIGS. 16(b) to 16(h), the light distribution characteristics are changed by forming the convex portion 2c which can obtain the diffraction action. Specifically, as shown in FIGS. 16(b), (c) and the like, in the light distribution characteristic, there is a point A in which the intensity is higher than the others in a specific angle range. It was found that the portion A was caused by ±1 time of light transmitted through the diffraction surface after being reflected by the reflecting portion. Further, as shown in FIGS. 16(b) to (h), the angular range of the portion A is changed by changing the period of the convex portion 2c.

Fig. 18 is a graph showing changes in integrated intensity of light in a predetermined angular range with respect to the optical axis. In Fig. 18, the horizontal axis represents the period of the convex portion, and the vertical axis represents the integrated intensity within ±30 degrees of the optical axis. Here, the broken line indicates the integrated intensity of the PSS substrate having a period of 3 μm of the linear convex portion. Moreover, the one-point chain line indicates the integrated intensity of the FSS substrate.

As shown in FIG. 18, the period of the convex portion 2c is 225 nm or more and 800 nm or less, and the integrated intensity is larger than that of the PSS substrate. In other words, when the period of the convex portion 2c is P and the peak wavelength of the light emitted from the light-emitting layer 14 is λ, the following relationship is satisfied: 1/2 × λ ≦ P ≦ 16 / 9 × λ, The light intensity on the optical axis can also be increased compared to the PSS substrate. Further, under the condition that the equation is established, since the diffraction action is obtained, the influence of the void of the semiconductor laminate portion 19 is increased.

Further, as shown in FIG. 18, the period of the convex portion 2c is 230 nm or more and 700 nm or less, and the integrated intensity is larger than that of the FSS substrate. In other words, when the period of the convex portion 2c is P and the peak wavelength of the light emitted from the light-emitting layer 14 is λ, the following relationship is satisfied: 23/45 × λ ≦ P ≦ 14 / 9 × λ, The light intensity on the optical axis can also be increased compared to the FSS substrate. Further, under the condition that the equation is established, since the diffraction action is obtained, the influence of the void of the semiconductor laminate portion 19 is increased.

Fig. 19 is a graph showing the relationship between the allowable number of transmitted diffracted lights and the integrated intensity. The allowable number of times here refers to the composition of the transmitted diffracted light that is included several times (allowed). Further, the one-dot chain line in Fig. 19 indicates the integrated intensity of the FSS substrate.

As shown in FIG. 19, if the transmitted diffracted light is allowed to be 2, 3, or 4 times, the integrated intensity of the FSS substrate is always exceeded. On the other hand, when the transmitted diffracted light is allowed only once, or When it is allowed to be 5 or more times, it is lower than the integrated intensity of the FSS substrate. That is to say, with respect to the transmitted diffracted light, it is preferable to design the diffracted light including at least 2 times and the diffracted light not including 5 times.

Fig. 20 is a graph showing the relationship between the allowable number of reflected diffracted lights and the integrated intensity. The allowable number of times here refers to the composition of the reflected diffracted light that is included several times (allowed). Further, the one-dot chain line in Fig. 20 indicates the integrated intensity of the FSS substrate.

As shown in FIG. 20, when the reflected diffracted light is allowed to be three or more times, the integrated intensity of the FSS substrate is always exceeded. On the other hand, when the reflected diffracted light is allowed only twice or less, it is lower than the FSS substrate. Integral intensity. That is to say, with respect to the reflected diffracted light, it is preferable to design the diffracted light including at least 3 times.

Fig. 21 is a graph showing the relationship between the period of the convex portion and the allowable number of the transmitted diffracted light and the reflected diffracted light. Also in Fig. 21, the light-emitting layer 14 has an emission wavelength of 450 nm. As shown in FIG. 21, the period of the convex portion 2c which is allowed to be 2, 3, or 4 times with respect to the transmitted diffracted light is 260 nm to 620 nm. In other words, when the period of the convex portion 2c is P and the peak wavelength of the light emitted from the light-emitting layer 14 is λ, the following relationship is satisfied: 26/45 × λ ≦ P ≦ 62 / 45 × λ, Regarding the transmitted diffracted light, the allowable number of times is 2 to 4 times.

On the other hand, regarding the reflected diffracted light, the period of the convex portion 2c which is allowed to be three or more times is 280 nm. In other words, when the period of the convex portion 2c is P and the peak wavelength of the light emitted from the light-emitting layer 14 is λ, the following relationship is satisfied: 28/45 × λ ≦ P, for the reflected diffracted light, The number of times is three or more. In other words, in order to make the allowable number of transmitted diffracted lights between two and four times, the allowable number of reflected diffracted lights is three or more times, and the following relationship is satisfied: 26/45×λ≦P≦62/45 ×λ can be.

In the LED element 1 having the above configuration, since the void density in the semiconductor build-up portion 19 is 1.0 × 10 ⁷ /cm ² or less, the influence of scattering can be minimized, and the light generated by the diffraction can be prevented from being damaged. Distribution characteristics. Further, since the buffer layer 10 is formed by a sputtering method, generation of voids in the semiconductor build-up portion 19 can be suppressed. Further, by the AlN of the buffer layer 10, the generation of voids in the semiconductor build-up portion 19 can be effectively suppressed. Further, by the thickness of the buffer layer 10 being 60 nm or less, the crystal quality of the semiconductor can be improved as compared with the conventional [FSS]. Further, by making the thickness of the buffer layer 10 more than 20 nm, the deterioration of the flatness of the crystal surface of the semiconductor buildup portion 19 can be suppressed.

Further, in the LED element 1 of the present embodiment, since the diffraction surface 2a and the reflection portion are disposed, the light distribution characteristics of the light emitted from the element can be changed to be nearly vertical. Further, when the period of the convex portion 2c is P and the peak wavelength of the light emitted from the light-emitting layer 14 is λ, the following relationship is satisfied: 1/2 × λ ≦ P ≦ 16 / 9 × λ Increase the amount of light around the optical axis taken out of the component. Therefore, it is possible to increase the light extraction efficiency by the diffraction action while realizing an appropriate light distribution by utilizing the light distribution characteristics due to the diffraction.

Further, in the diffraction surface 2a, since the diffracted light is allowed to be allowed to be applied twice, three times or four times, and the diffracted light is allowed to be allowed three times or more, the optical axis around the element can be enlarged. The amount of light.

Further, by the verticalization of the light in the diffraction surface 2a, the distance of the light emitted from the light-emitting layer 14 to the back surface of the sapphire substrate 2 can be particularly shortened, and the absorption of light in the inside of the element can be suppressed. In the LED element, light in an angular region exceeding the critical angle of the interface propagates in the lateral direction, so there is a problem that light is absorbed inside the element, but the light in the angular region exceeding the critical angle is made nearly vertical in the diffraction surface 2a. Therefore, the light absorbed inside the component can be drastically reduced. Further, in the present embodiment, since the reflection portion is made of a combination of the dielectric multilayer films 22 and 25 and the metal layers 23 and 26, the angle closer to the vertical angle is higher, so that the light is close to the interface. Become a favorable reflection condition.

22 and 23 are views showing a second embodiment of the present invention, and Fig. 22 is a schematic cross-sectional view showing an LED element. As shown in FIG. 22, the LED element 101 is of a face-up type, and a semiconductor laminate portion 119 composed of a group III nitride semiconductor layer is formed on the surface of the sapphire substrate 102. The LED element 101 is of a face-up type, and light is mainly taken out from the side opposite to the sapphire substrate 102. The semiconductor build-up portion 119 has a buffer layer 110, an n-type GaN layer 112, a light-emitting layer 114, an electron blocking layer 116, and a p-type GaN layer 118 in the following order from the sapphire substrate 102 side. A p-side electrode 127 is formed on the p-type GaN layer 118, and an n-side electrode 128 is formed on the n-type GaN layer 112. Further, the p-side electrode 127 has a diffusion electrode 121 formed on the p-type GaN layer 118 and a pad electrode 122 formed on a portion of the diffusion electrode 121.

The buffer layer 110 is made of AlN and is formed on the surface of the sapphire substrate 102. The buffer layer 110 has a thickness of 40 nm or less and is formed by a sputtering method. Further, the void density in the semiconductor build-up portion 119 is 1.0 × 10 ⁷ /cm ² or less.

In the LED element 101, the surface of the sapphire substrate 102 constitutes a diffraction surface 102a. The surface of the sapphire substrate 102 is formed with a flat portion 102b and a plurality of convex portions 102c periodically formed in the flat portion 102b. The shape of each convex portion 102c may be a truncated cone shape such as a truncated cone or a polygonal pyramid, or a truncated cone shape such as a truncated cone or the like. Each convex portion 102c is designed to diffract light emitted from the light-emitting layer 114. In the present embodiment, the verticalization of light can be obtained by the convex portions 102c arranged periodically.

The diffraction surface 102a of the present embodiment has a period of the convex portion 102c as P, and when the peak wavelength of the light emitted from the light-emitting layer 114 is λ, the following relationship is satisfied: 1/2 × λ ≦ P ≦ 16 / 9 × λ sets the period of the convex portion 102c. Further, the period of the convex portion 102c is set such that the transmitted diffracted light includes at least two times of diffracted light, and does not include five times of diffracted light. Moreover, the period of the convex portion 102c is set such that the reflected diffracted light includes at least 3 times of diffracted light.

Further, an additional GaN layer may be disposed between the buffer layer 110 and the n-type GaN layer 112 by the growth conditions in which the faceting of GaN is promoted instead of the growth conditions of the n-type GaN layer 112. As favorable growth conditions for the facet formation, it is conceivable to lower the temperature in the reactor, increase the pressure in the reactor, reduce the supply amount of NH ₃ , and reduce the supply amount of (CH ₃ ) ₃ Ga or the like. By disposing the GaN layer, the semiconductor layered portion 119 can be made to have a good crystal quality without being affected by the period of the convex portion 102c. The additional GaN layer can be formed, for example, by supplying 2200 sccm of NH ₃ and 20 sccm of (CH ₃ ) ₃ Ga while maintaining the temperature in the reactor at 950 ° C for a predetermined period of time and a pressure of 930 hPa. Further, the n-type GaN layer 112 can be formed, for example, by supplying 8000 sccm of NH ₃ and 45 sccm of (CH ₃ ) ₃ Ga at a temperature of 1040 ° C and a pressure of 500 hPa in the reactor.

Figure 23 is a partially enlarged schematic cross-sectional view showing an LED element. As shown in FIG. 23, a dielectric multilayer film 124 is formed on the back side of the sapphire substrate 102. The dielectric multilayer film 124 is covered by an Al layer 126 of a metal layer. In the light-emitting element 101, the dielectric multilayer film 124 and the Al layer 126 constitute a reflection portion, and the light-emitting layer 114 emits light that is transmitted through the diffraction surface 102a by the diffraction action. Then, by the light transmitted by the diffraction action being incident on the diffraction surface 102a, the diffraction surface 102a is again transmitted by the diffraction action, and the light is taken out to the outside of the element in a plurality of modes.

FIG. 24 is a graph showing an example of the reflectance of the reflection portion. In FIG. 24, the dielectric layer of the dielectric multilayer film formed on the sapphire substrate by the combination of ZrO ₂ and SiO _{2 has} a logarithm of 5, and an Al layer is formed by superposing on the dielectric multilayer film. As shown in FIG. 24, a reflectance of 99% or more is achieved in an angle range of an incident angle of 0 to 55 degrees. Moreover, a reflectance of 98% or more is achieved in an angle range of an incident angle of 0 to 60 degrees. Moreover, a reflectance of 92% or more is achieved in an angle range of an incident angle of 0 to 75 degrees. As such, the combination of the dielectric multilayer film and the metal layer is a reflective condition that is advantageous for light having an interface close to vertical. Further, it was confirmed that the case where only the Al layer was formed on the sapphire substrate did not depend on the incident angle, and it became a certain reflectance of about 88%.

In the LED element 101 having the above configuration, since the void density in the semiconductor build-up portion 119 is 1.0 × 10 ⁷ /cm ² or less, the influence of scattering can be minimized, and the light generated by the diffraction can be prevented from being damaged. Distribution characteristics. Further, since the buffer layer 110 is formed by a sputtering method, generation of voids in the semiconductor build-up portion 119 can be suppressed. Further, by the AlN of the buffer layer 110, generation of voids in the semiconductor build-up portion 119 can be effectively suppressed. Further, by the thickness of the buffer layer 110 being 60 nm or less, the crystal quality of the semiconductor can be improved as compared with the conventional [FSS]. Further, by making the thickness of the buffer layer 110 more than 20 nm, the deterioration of the flatness of the crystal surface of the semiconductor build-up portion 119 can be suppressed.

Further, since the diffraction surface 102a and the reflection portion are disposed, the light distribution characteristics of the light emitted from the element can be changed to be nearly vertical. Further, when the period of the convex portion 102c is P and the peak wavelength of the light emitted from the light-emitting layer 114 is λ, the following relationship is satisfied: 1/2 × λ ≦ P ≦ 16 / 9 × λ Increase the amount of light around the optical axis taken out of the component.

Further, in the diffraction surface 102a, since the diffracted light is allowed to be allowed to be applied twice, three times or four times, and the diffracted light is allowed to be allowed three times or more, the optical axis around the element can be enlarged. The amount of light.

Moreover, the distance from the light emitted from the light-emitting layer 114 to the surface of the p-side electrode 127 can be particularly shortened, and the absorption of light in the inside of the element can be suppressed. In the LED element, since the light in the angular region exceeding the critical angle of the interface propagates in the lateral direction, there is a problem that light is absorbed inside the element, but the light in the angular region exceeding the critical angle is made nearly vertical in the diffraction surface 102a. Therefore, the light absorbed inside the component can be drastically reduced. Further, in the present embodiment, since the reflection portion is formed by the combination of the dielectric multilayer film 124 and the metal layer 126, the angle closer to the vertical is higher, and therefore the reflection becomes favorable for the light whose interface is nearly vertical. condition.

Further, in the first and second embodiments, it is shown that the circumferentially formed convex portions constitute the diffraction surface, but of course, the concave portions formed periodically may constitute the diffraction surface. Further, in addition to forming the convex portion or the concave portion at the intersection of the triangular lattices, for example, it may be formed by being arranged at the intersection of the virtual square lattices.

Further, in the first and second embodiments, although the emitting surface of the light in the element is a flat surface, for example, as shown in FIGS. 25 and 26, the light emitting surface may be subjected to uneven processing. In the LED element 1 of the first embodiment of the flip chip type, the LED element 1 of FIG. 25 is subjected to uneven processing on the back surface of the sapphire substrate 2. The back surface 2g of the sapphire substrate 2 is formed with a flat portion 2h and a plurality of convex portions 2i that are periodically formed in the flat portion 2h. The shape of each convex portion 2i may be a truncated cone shape such as a truncated cone or a polygonal pyramid, or a truncated cone shape such as a truncated cone or the like. It is preferable that the period of each convex portion 2i in the back surface 2g of the sapphire substrate 2 is shorter than the period of the diffraction surface 2a. Accordingly, the Fresnel reflection in the back surface 2g of the sapphire substrate 2 is suppressed.

Further, in the LED element 101 of the second embodiment of the flip chip type, the LED element 101 of FIG. 26 applies a concavo-convex process to the surface of the p-side electrode 127. The surface 127g of the p-side electrode 127 forms a flat portion 127h and a plurality of convex portions 127i that are periodically formed in the flat portion 127h. The shape of each convex portion 127i may be a truncated cone shape such as a truncated cone or a polygonal frustum, in addition to a tapered shape such as a cone or a polygonal pyramid. It is preferable that the period of each convex portion 127i in the surface 127g of the p-side electrode 127 is shorter than the period of the diffraction surface 102a. According to this, Fresnel reflection in the surface 127g of the p-side electrode 127 is suppressed.

Further, in the first and second embodiments, although the buffer layer is shown as a single layer formed by sputtering, for example, as shown in FIG. 27, the buffer layer is the first layer 10a formed by sputtering. It is also possible to form a second layer 10b which grows at a low temperature by the MOCVD method. According to this, compared with the case where the buffer layer is a single layer formed by a sputtering method, the void density can be made equal and the through-difference density can be further reduced. Specifically, the first layer 10a is made of 20 nm of AlN by sputtering, and the second layer 10b is made of 20 nm of GaN grown by low temperature by MOCVD, and the void density becomes a buffer layer by sputtering. The value of the 40 nm single-layer AlN formed by the method is equivalent to the value of the through-difference density which is lower than the case where the buffer layer is a single-layer AlN of 20 nm formed by a sputtering method.

Further, in the first and second embodiments, it is shown that blue light is emitted from the light-emitting layer, but light such as green or red may be emitted. In short, it suffices that the relationship between the period of the concave portion or the convex portion and the peak wavelength of the light emitted from the light-emitting layer satisfies a predetermined condition.

1, 101‧‧‧ LED components
2, 102‧‧‧ sapphire substrate
2a, 102a‧‧‧Diffraction surface
2b, 102b‧‧‧ flat
2c, 2i, 102c‧‧‧ convex
2g‧‧‧back
2h‧‧‧flat surface
10, 110‧‧‧ buffer layer
10a‧‧‧ first floor
10b‧‧‧ second floor
12, 112‧‧‧n type GaN layer
14, 114‧‧‧Lighting layer
16, 116‧‧‧Electronic barrier
18, 118‧‧‧p-type GaN layer
19. 119‧‧‧ Semiconductor Stacking Department
21, 24, 121‧‧‧ diffusion electrodes
22, 25, 124‧‧‧ dielectric multilayer film
22a‧‧‧First material
22b‧‧‧Second material
22c, 25c‧‧‧ interlayer hole
23, 26‧‧‧ metal electrodes
27, 127‧‧‧p side electrode
28, 128‧‧‧n side electrode
122‧‧‧ pads electrode
124‧‧‧Dielectric multilayer film
126‧‧‧Al layer
Surface of the 127g‧‧‧p side electrode
127h‧‧‧flat
127i‧‧‧ convex

Fig. 1 is a schematic cross-sectional view showing an LED element according to a first embodiment of the present invention. 2(a) and 2(b) are explanatory views showing the diffraction action of light in the interface of different refractive indices, wherein (a) shows a state in which the interface is reflected, and (b) shows a state in which the transmission interface is displayed. 3 is a view showing an incident angle of light incident on the interface from the side of the semiconductor layer in the interface between the group III nitride semiconductor layer and the sapphire substrate at a period of 500 nm in the period of the recess or the projection, and by diffraction at the interface A graph of the relationship of the transmitted angles produced. 4 is a view showing an incident angle of light incident on the interface from the side of the semiconductor layer in the interface between the group III nitride semiconductor layer and the sapphire substrate at a period of 500 nm in the period of the recess or the projection, and by diffraction at the interface A graph of the relationship of the resulting reflection angles. Fig. 5 is an explanatory view showing a traveling direction of light in the inside of the element. Fig. 6 is a partially enlarged schematic cross-sectional view showing the LED element. FIG. 7 is a graph showing an example of the reflectance of the reflection portion. 8(a) and 8(b) are diagrams showing a sapphire substrate, (a) is a schematic perspective view, and (b) is a schematic explanatory view showing an A-A cross section. Fig. 9 is a table showing the relationship between the period of the convex portion and the void density. Fig. 10 is a graph showing the relationship between the film thickness of the buffer layer and the void density. Fig. 11 is a graph showing the relationship between the wavelength and the transmissivity in the LED element. Fig. 12 is a graph showing the relationship between the void density and the light extraction efficiency in the LED element. Fig. 13 is a graph showing the relationship between the void density and the threading dislocation density of the semiconductor laminate portion. Fig. 14 is a table showing the relationship between the thickness of the buffer layer and the transmittance. Fig. 15 is a view showing the light distribution characteristics of the LED elements in polar coordinates. 16 is a view showing a light distribution characteristic of the LED element, (a) is a view showing a state in which a convex portion is not formed on the sapphire substrate, and (b) to (h) are diagrams showing a state in which a convex portion is formed on the sapphire substrate. 17 is a table showing calculated values and measured values of the respective substrates. Fig. 18 is a graph showing changes in integrated intensity with respect to light in a predetermined angular range of the optical axis. Fig. 19 is a graph showing the relationship between the allowable number of transmitted diffracted lights and the integrated intensity. Fig. 20 is a graph showing the relationship between the allowable number of reflected diffracted lights and the integrated intensity. Fig. 21 is a graph showing the relationship between the period of the convex portion and the allowable number of the transmitted diffracted light and the reflected diffracted light. Fig. 22 is a schematic cross-sectional view showing an LED element according to a second embodiment of the present invention. Figure 23 is a partially enlarged schematic cross-sectional view showing an LED element. FIG. 24 is a graph showing an example of the reflectance of the reflection portion. Fig. 25 is a schematic cross-sectional view showing an LED element of a modification. Fig. 26 is a schematic cross-sectional view showing an LED element of a modification. Fig. 27 is a schematic cross-sectional view showing an LED element of a modification.

1‧‧‧LED components

2‧‧‧Sapphire substrate

2a‧‧‧Diffing surface

2b‧‧‧flat

2c‧‧‧ convex

10‧‧‧buffer layer

12‧‧‧n-type GaN layer

14‧‧‧Lighting layer

16‧‧‧Electronic barrier

18‧‧‧p-type GaN layer

19‧‧‧Semiconductor Stacking Department

21, 24‧‧‧ diffusion electrode

22, 25‧‧‧ Dielectric multilayer film

22c, 25c‧‧‧ interlayer hole

23, 26‧‧‧ metal electrodes

27‧‧‧p side electrode

28‧‧‧n side electrode

Claims (5)

A light-emitting element comprising: a sapphire substrate having a concave portion or a convex portion dispersed at a period of 1 μm or less on a surface thereof; and a semiconductor laminate portion including a light-emitting layer composed of a group III nitride semiconductor formed on a surface of the sapphire substrate a diffraction effect of light emitted from the luminescent layer by the interface between the sapphire substrate and the semiconductor buildup portion, wherein the sapphire substrate of the semiconductor buildup portion is formed to have a size smaller than a period of the recess or the projection The density is 2.6 × 10 ² /cm ² or more and 2.3 × 10 ⁷ /cm ² or less. The light-emitting element of claim 1, wherein the void has a density of 1.0 × 10 ⁷ /cm ² or less. The light-emitting element according to claim 2, wherein the semiconductor laminate portion has a buffer layer formed on the sapphire substrate side, and the buffer layer is formed by a sputtering method. The light-emitting element according to claim 3, wherein the semiconductor laminate portion has a buffer layer formed on the sapphire substrate side, and the buffer layer is made of AlN. The light-emitting element of claim 4, wherein the period of the concave portion or the convex portion is P, and when the peak wavelength of light emitted from the light-emitting layer is λ, the following relationship is satisfied: 1/2 × λ ≦ P ≦16/9×λ.