TW201528549A - 光電元件及其製造方法 - Google Patents
光電元件及其製造方法 Download PDFInfo
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- TW201528549A TW201528549A TW103100593A TW103100593A TW201528549A TW 201528549 A TW201528549 A TW 201528549A TW 103100593 A TW103100593 A TW 103100593A TW 103100593 A TW103100593 A TW 103100593A TW 201528549 A TW201528549 A TW 201528549A
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- 238000000034 method Methods 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 230000005693 optoelectronics Effects 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 claims abstract description 96
- 239000000463 material Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 21
- 229920002120 photoresistant polymer Polymers 0.000 claims description 14
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical class [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 4
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims 4
- 239000010410 layer Substances 0.000 description 163
- 229910052751 metal Inorganic materials 0.000 description 47
- 239000002184 metal Substances 0.000 description 47
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 7
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
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- 229910001020 Au alloy Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
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- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 2
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- 230000017525 heat dissipation Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
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- UJXZVRRCKFUQKG-UHFFFAOYSA-K indium(3+);phosphate Chemical compound [In+3].[O-]P([O-])([O-])=O UJXZVRRCKFUQKG-UHFFFAOYSA-K 0.000 description 2
- YQNQTEBHHUSESQ-UHFFFAOYSA-N lithium aluminate Chemical compound [Li+].[O-][Al]=O YQNQTEBHHUSESQ-UHFFFAOYSA-N 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
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- 239000010948 rhodium Substances 0.000 description 2
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- 229910000679 solder Inorganic materials 0.000 description 2
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- 238000002834 transmittance Methods 0.000 description 2
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- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- -1 Al) Substances 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910017398 Au—Ni Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910017755 Cu-Sn Inorganic materials 0.000 description 1
- 229910017927 Cu—Sn Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910020218 Pb—Zn Inorganic materials 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- AVBDSJHZXVUVGM-UHFFFAOYSA-N [Ni].[Au].[Bi] Chemical compound [Ni].[Au].[Bi] AVBDSJHZXVUVGM-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
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- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
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- 239000003292 glue Substances 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- MNKMDLVKGZBOEW-UHFFFAOYSA-M lithium;3,4,5-trihydroxybenzoate Chemical compound [Li+].OC1=CC(C([O-])=O)=CC(O)=C1O MNKMDLVKGZBOEW-UHFFFAOYSA-M 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- MZFIXCCGFYSQSS-UHFFFAOYSA-N silver titanium Chemical compound [Ti].[Ag] MZFIXCCGFYSQSS-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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Abstract
一光電元件,包含:一半導體疊層,其中半導體疊層包含一第一半導體層,一發光層位於第一半導體層之上,及一第二半導體層位於發光層之上;一第一電極位於第二半導體層之上,其中第一電極更包含一反射層;以及一絕緣層形成於第二半導體層之上,且第一電極與絕緣層具有一間距。
Description
本發明係關於一種光電元件,尤其是關於一種光電元件的電極設計。
發光二極體(light-emitting diode,LED)的發光原理是利用電子在n型半導體與p型半導體間移動的能量差,以光的形式將能量釋放,這樣的發光原理係有別於白熾燈發熱的發光原理,因此發光二極體被稱為冷光源。此外,發光二極體具有高耐久性、壽命長、輕巧、耗電量低等優點,因此現今的照明市場對於發光二極體寄予厚望,將其視為新一代的照明工具,已逐漸取代傳統光源,並且應用於各種領域,如交通號誌、背光模組、路燈照明、醫療設備等。
第1A圖係習知之發光元件結構示意圖,如第1A圖所示,習知之發光元件100,包含有一透明基板10、一位於透明基板10上之半導體疊層12,以及至少一電極14位於上述半導體疊層12上,其中上述之半導體疊層12由上而下至少包含一第一導電型半導體層120、一活性層122,以及一第二導電型半導體層124。
第1B圖係習知之發光元件電極結構示意圖,如第1B圖所示,習知之發光元件100’,包含有一透明基板10、一位於透明基板10上之半導體疊層12,以及至少一電極14位於上述半導體疊層12上,其中電極14可包含一反射電極141及一擴散阻障層142。但因為擴散阻障層142可能無法透光,而降低了發光元件100的出光效率。
此外,上述之發光元件100更可以進一步地與其他元件組合連接以形成一發光裝置(light-emitting apparatus)。第2圖為習知之發光裝置結
構示意圖,如第2圖所示,一發光裝置200包含一具有至少一電路202之次載體(sub-mount)20;至少一焊料(solder)22位於上述次載體20上,藉由此焊料22將上述發光元件100黏結固定於次載體20上並使發光元件100之基板10與次載體20上之電路202形成電連接;以及,一電性連接結構24,以電性連接發光元件100之電極14與次載體20上之電路202;其中,上述之次載體20可以是導線架(lead frame)或大尺寸鑲嵌基底(mounting substrate),以方便發光裝置200之電路規劃並提高其散熱效果。
一光電元件,包含:一半導體疊層,其中該半導體疊層包含一第一半導體層,一發光層位於該第一半導體層之上,及一第二半導體層位於該發光層之上;一第一電極位於該第二半導體層之上,其中該第一電極更包含一反射層;以及一絕緣層形成於該第二半導體層之上,且該第一電極與該絕緣層具有一間距。
第1A-1B圖為一結構圖,顯示一習知陣列發光二極體元件側視結構圖;第2圖為一示意圖,顯示一習知發光裝置結構示意圖;第3A-3E圖為本發明實施例製造流程結構示意圖;第4A圖至第4C圖係繪示出一發光模組示意圖;第5A-5B圖係繪示出一光源產生裝置示意圖;及第6圖係繪示一燈泡示意圖。
本發明揭示一種發光元件及其製造方法,為了使本發明之敘述更加詳盡與完備,請參照下列描述並配合第3A圖至第6圖之圖示。
第3A圖至第3E圖為本發明實施例製造流程結構示意圖,如第3A圖所示,提供一基板30,接著形成一半導體磊晶疊層32於此基板
30之上,其中半導體磊晶疊層32由下而上包含一第一導電型半導體層321、一活性層322,以及一第二導電型半導體層323。
接著,形成一絕緣層34於半導體磊晶疊層32之上,且與第一導電型半導體層321之第一表面3211及第二導電型半導體層323之第一表面3231直接接觸。之後,形成一圖案化光阻層36於絕緣層34之第一表面34S之上,並裸露出部分的絕緣層第一表面34S。
如第3B圖所示,藉由上述圖案化光阻層36對絕緣層34進行一蝕刻製程,將部分的絕緣層34移除,且裸露出部分的第一導電型半導體層321之第一表面3211及第二導電型半導體層323之部分第一表面3231,以形成一第一絕緣層341於第一導電型半導體層321之部分第一表面3211之上,一第二絕緣層342於第二導電型半導體層323之部分第一表面3231之上,及一第三絕緣層343於第二導電型半導體層323之部分第一表面3231之上及第一導電型半導體層321之部分第一表面3211之上。
在一實施例中,可藉由圖案化光阻層36對絕緣層34進行一側蝕刻製程,使得部分位於圖案化光阻層36之下的絕緣層34也被蝕刻,亦即使部分上述第一絕緣層341及第二絕緣層342相對於圖案化光阻層36具有一底切(undercut)形狀。圖案化光阻層36因此於投影於半導體磊晶疊層32表面之邊緣會與第一絕緣層341及第二絕緣層342投影於半導體磊晶疊層32表面之邊緣具有一間距G。在一實施例中,上述間距G可小於3μm。在一實施例中,上述側蝕刻可為一濕式蝕刻。
接著,如第3C圖所示,以物理氣相沉積同時形成一第一金屬層382、一第二金屬層381及一暫時金屬層383。其中第一金屬層382形成於第二導電型半導體層323裸露出之部分第一表面3231之上;第二金屬層381形成於第一導電型半導體層321裸露出之部分第一表面3211之上;及暫時金屬層383形成於圖案化光阻層36之上,並覆蓋圖案化光阻層36之上表面。在一實施例中,上述物理氣相沉積可為真空蒸鍍(Vacuum Evaporation)、濺鍍(Sputtering)、電子束蒸鍍(Electron Beam Evaporation)或離子鍍(Ion Plating)。
在一實施例中,因為圖案化光阻層36具有一底切(undercut)形狀,因此第一金屬層382之側壁不會與上述第一絕緣層341及第二絕緣層342之側壁直接接觸,且第二金屬層381之側壁不會與上述第一絕緣層341之側壁直接接觸。
在一實施例中,第一金屬層382可為一複數疊層,且可包含一反射層,此反射層之材料可選自反射率大於90%的材料。在一實施例中第一金屬層中之反射層之材料可選自鉻(Cr)、鈦(Ti)、鎳(Ni)、鉑(Pt)、銅(Cu)、金(Au)、鋁(Al)、鎢(W)、錫(Sn)、或銀(Ag)等金屬材料。
接著,如第3D圖所示,移除圖案化光阻層36及其上之暫時金屬層383。在一實施例中,如第3D圖所示,第二金屬層381至第一導電型半導體層321之第一表面3211可具有一高度h1,而第一絕緣層341至第一導電型半導體層321之第一表面3211可具有一高度h2,藉由本發明之上述製程,第二金屬層381與第一絕緣層341可具有相近之厚度或第二金屬層381與第一絕緣層341之厚度差異小於1μm。在一實施例中,第二金屬層381與第一絕緣層341可具有一間距d1,且此間距d1小於3μm,及/或第二金屬層381與第三絕緣層343可具有一間距d2,且此間距d2小於3μm。在一實施例中,d1與d2可具有相同值。
在另一實施例中,第一金屬層382至第二導電型半導體層323之第一表面3231可具有一高度h3,而第二絕緣層342至第二導電型半導體層323之第一表面3231可具有一高度h4,藉由上述實施例揭露之製程,第一金屬層382與第二絕緣層342可具有相近之高度或第一金屬層382與第二絕緣層342之高度差異小於1μm。在一實施例中,第一金屬層382與第二絕緣層342可具有一間距d3,且此間距d3小於3μm,及/或第一金屬層382與第三絕緣層343可具有一間距d4,且此間距d4小於3μm。在一實施例中,d3與d4可具有相同值。在另一實施例中,d1、d2、d3與d4可具有相同值。
最後,如第3E圖所示,形成一第三金屬層42於第一金屬層382之上,及形成一第四金屬層40於第二金屬層381之上以完成本發明之
光電元件300。在一實施例中,部分第四金屬層40與第一導電型半導體層321之第一表面3211直接接觸,或部分第三金屬層42與第二導電型半導體層323之第一表面3231直接接觸。在一實施例中,上述第三金屬層42下方幾乎不存在第二絕緣層342。在另一實例中,第三金屬層42之頂部與第一半導體層321之第二表面3212具有一最短距離d6,及第四金屬層40之頂部與第一半導體層321之第二表面3212具有一最短距離d5,且d6與d5之差異小於1μm。在一實施例中,上述第三金屬層42及第四金屬層40於垂直基板30法線方向之投影可具有相近之面積。
在一實施例中,接續上述第3D圖或第3E圖之後,基板30可被移除並裸露出第一導電型半導體層321之部分第二表面3212以形成一薄膜式覆晶(thin-film flip chip)。在一實施例中,接續上述第3D圖或第3E圖之後,藉由第一金屬層382及第二金屬層381或第三金屬層42及第四金屬層40可將本發明之光電元件300連接至一載板(圖未示)以形成一覆晶封裝(flip chip package)。在一實施例中第一金屬層382、第二金屬層381、第三金屬層42或第四金屬層40之材料包含但不限於銅(Cu)、鋁(Al)、銦(In)、錫(Sn)、金(Au)、鉑(Pt)、鋅(Zn)、銀(Ag)、鈦(Ti)、鎳(Ni)、鉛(Pb)、鈀(Pd)、鍺(Ge)、鉻(Cr)、鎘(Cd)、鈷(Co)、錳(Mn)、銻(Sb)、鉍(Bi)、鎵(Ga)、鉈(Tl)、釙(Po)、銥(Ir)、錸(Re)、銠(Rh)、鋨(Os)、鎢(W)、鋰(Li)、鈉(Na)、鉀(K)、鈹(Be)、鎂(Mg)、鈣(Ca)、鍶(Sr)、鋇(Ba)、鋯(Zr)、鉬(Mo)、鈉(La)、銀-鈦(Ag-Ti)、銅-錫(Cu-Sn)、銅-鋅(Cu-Zn)、銅-鎘(Cu-Cd)、錫-鉛-銻(Sn-Pb-Sb)、錫-鉛-鋅(Sn-Pb-Zn)、鎳-錫(Ni-Sn)、鎳-鈷(Ni-Co)、金合金(Au alloy)、或鍺-金-鎳(Ge-Au-Ni)等金屬材料。
第4A圖至第4C圖係繪示出一發光模組示意圖,第4A圖係顯示一發光模組外部透視圖,一發光模組500可包含一載體502,複數個透鏡504、506、508及510,及兩電源供應終端512及514。
第4B-4C圖係顯示一發光模組剖面圖,其中第4C圖係第4B圖之E區的放大圖。載體502可包含一上載體503及下載體501,其中下載體501之一表面可與上載體503接觸。透鏡504及508形成在上載體503之上。上載體503可形成至少一通孔515,而依本發明實施例形成之發光二
極體元件300可形成在上述通孔515中並與下載體501接觸,且被膠材521包圍。膠材521之上具有一透鏡508。
如第4C圖所示,在一實施例中,通孔515之兩側壁之上可形成一反射層519以增加出光效率;下載體501之下表面可形成一金屬層517以增進散熱效率。
第5A-5B圖係繪示出一光源產生裝置示意圖600,一光源產生裝置600可包含一發光模組500、一外殼540、一電源供應系統(未顯示)以供應發光模組600一電流、以及一控制元件(未顯示),用以控制電源供應系統(未顯示)。光源產生裝置600可以是一照明裝置,例如路燈、車燈或室內照明光源,也可以是交通號誌或一平面顯示器中背光模組的一背光光源。
第6圖係繪示一燈泡示意圖。燈泡700包括一個外殼921,一透鏡922,一照明模組924,一支架925,一散熱器926,一串接部927及一電串接器928。其中照明模組924係包括一載體923,並在載體923上包含至少一個上述實施例中的發光二極體元件300。
具體而言,光電元件300係包含發光二極體(LED)、光電二極體(photodiode)、光敏電阻(photoresister)、雷射(laser)、紅外線發射體(infrared emitter)、有機發光二極體(organic light-emitting diode)及太陽能電池(solar cell)中至少其一。基板30係為一成長及/或承載基礎。候選材料可包含導電基板或不導電基板、透光基板或不透光基板。其中導電基板材料其一可為鍺(Ge)、砷化鎵(GaAs)、銦化磷(InP)、碳化矽(SiC)、矽(Si)、鋁酸鋰(LiAlO2)、氧化鋅(ZnO)、氮化鎵(GaN)、氮化鋁(AlN)、金屬。透光基板材料其一可為藍寶石(Sapphire)、鋁酸鋰(LiAlO2)、氧化鋅(ZnO)、氮化鎵(GaN)、玻璃、鑽石、CVD鑽石、與類鑽碳(Diamond-Like Carbon;DLC)、尖晶石(spinel,MgAl2O4)、氧化鋁(Al2O3)、氧化矽(SiOX)及鎵酸鋰(LiGaO2)。
上述第一導電型半導體層321與第二導電型半導體層323係電性、極性或摻雜物相異,分別用以提供電子與電洞之半導體材料單層或多層結構(「多層」係指二層或二層以上,以下同。)其電性選擇可以為p型、n型、及i型中至少任意二者之組
合。活性層322係位於上述二個部分之電性、極性或摻雜物相異、或者係分別用以提供電子與電洞之半導體材料之間,為電能與光能可能發生轉換或被誘發轉換之區域。電能轉變或誘發光能者係如發光二極體、液晶顯示器、有機發光二極體;光能轉變或誘發電能者係如太陽能電池、光電二極體。上述半導體磊晶疊層32其材料包含一種或一種以上之元素選自鎵(Ga)、鋁(Al)、銦(In)、砷(As)、磷(P)、氮(N)以及矽(Si)所構成群組。常用之材料係如磷化鋁鎵銦(AlGaInP)系列、氮化鋁鎵銦(AlGaInN)系列等III族氮化物、氧化鋅(ZnO)系列等。活性層322之結構係如:單異質結構(single heterostructure;SH)、雙異質結構(double heterostructure;DH)、雙側雙異質結構(double-side double heterostructure;DDH)、或多層量子井(multi-quantum well;MQW)結構。當光電元件300為一發光二極體,其發光頻譜可以藉由改變半導體單層或多層之物理或化學要素進行調整。再者,調整量子井之對數亦可以改變發光波長。
於本發明之一實施例中,半導體磊晶疊層32與基板30間尚可選擇性地包含一緩衝層(buffer layer,未顯示)。此緩衝層係介於二種材料系統之間,使基板之材料系統”過渡”至半導體系統之材料系統。對發光二極體之結構而言,一方面,緩衝層係用以降低二種材料間晶格不匹配之材料層。另一方面,緩衝層亦可以是用以結合二種材料或二個分離結構之單層、多層或結構,其可選用之材料係如:有機材料、無機材料、金屬、及半導體等;其可選用之結構係如:反射層、導熱層、導電層、歐姆接觸(ohmic contact)層、抗形變層、應力釋放(stress release)層、應力調整(stress adjustment)層、接合(bonding)層、波長轉換層、及機械固定構造等。
半導體磊晶疊層32上更可選擇性地形成一接觸層(未顯示)。接觸層係設置於半導體磊晶疊層32遠離基板30之一側。具體而言,接觸層可以為光學層、電學層、或其二者之組合。
光學層係可以改變來自於或進入活性層的電磁輻射或光線。在此所稱之「改變」係指改變電磁輻射或光之至少一種光學特性,前述特性係包含但不限於頻率、波長、強度、通量、效率、色溫、演色性(rendering index)、光場(light field)、及可視角(angle of view)。電學層係可以使得接觸層之任一組相對側間之電壓、電阻、電流、電容中至少其一之數值、密度、分布發生變化或有發生變化之趨勢。接觸層之構成材料係包含氧化物、導電氧化物、透明氧化物、具有50%或以上穿透率之氧化物、金屬、相對透光金屬、具有50%或以上穿透率之金屬、有機質、無機質、螢光物、磷光物、陶瓷、半導體、摻雜之半導體、及無摻雜之半導體中至少其一。於某些應用中,接觸層之材料係為氧化銦錫、氧化鎘錫、氧化銻錫、氧化銦鋅、氧化鋅鋁、與氧化鋅錫中至少其一。若為相對透光金屬,其厚度較佳地約為0.005μm~0.6μm。在一實施例中,由於接觸層具有較佳的橫向電流擴散速率,可以用以協助電流均勻擴散到半導體磊晶疊層32之中。一般而言,根據接觸層摻混的雜質與製程的方式不同而有所變動,其能隙的寬度可介於0.5eV至5eV之間。
以上各圖式與說明雖僅分別對應特定實施例,然而,各個實施例中所說明或揭露之元件、實施方式、設計準則、及技術原理除在彼此顯相衝突、矛盾、或難以共同實施之外,吾人當可依其所需任意參照、交換、搭配、協調、或合併。雖然本發明已說明如上,然其並非用以限制本發明之範圍、實施順序、或使用之材料與製程方法。對於本發明所作之各種修飾與變更,皆不脫本發明之精神與範圍。
Claims (17)
- 一光電元件,包含:一半導體疊層,其中該半導體疊層包含一第一半導體層,一發光層位於該第一半導體層之上,及一第二半導體層位於該發光層之上;一第一電極位於該第二半導體層之上,其中該第一電極更包含一反射層;以及一絕緣層形成於該第二半導體層之上,且該第一電極與該絕緣層具有一間距。
- 如請求項1所述之光電元件,其中該第一電極至該第二半導體層具有一第一高度及該絕緣層至該第二半導體層具有一第二高度,且該第一高度與該第二高度相近或該第一高度與該第二高度之差異小於1μm。
- 如請求項1所述之光電元件,其中更包含一第二電極形成於該第一電極之上,且該第二電極幾乎不覆蓋該絕緣層。
- 如請求項3所述之光電元件,其中更包含一第三電極形成於該第一半導體層之上。
- 如請求項4所述之光電元件,其中該第二電極之頂部與該第一半導體層之底部具有一最短距離h1,及該第三電極之頂部與該第一半導體層之底部具有一最短距離h2,且h1與h2之差異小於1μm。
- 如請求項1所述之光電元件,其中該第一半導體層、該發光層 及該第二半導體層之材料包含磷化鋁鎵銦(AlGaInP)系列、氮化鋁鎵銦(AlGaInN)系列等III族氮化物或氧化鋅(ZnO)系列。
- 如請求項1所述之光電元件,其中該間距小於3μm。
- 如請求項1所述之光電元件,其中更包含一基板連結該半導體疊層。
- 如請求項1所述之光電元件,其中更包含一載板電性連接該第二電極與該第三電極。
- 一種製造一光電元件之方法,包含下列步驟:提供一半導體疊層,其中該半導體疊層包含一第一半導體層,一發光層形成於該第一半導體層之上,及一第二半導體層形成於該發光層之上;蝕刻該半導體疊層以裸露出部分該第一半導體層;形成一絕緣層該半導體層之上;形成一光阻層於該絕緣層之上;藉由該光阻層蝕刻部分該絕緣層以裸露出部分該第一半導體層及該第二半導體層;以及藉由該光阻層形成一第一電極於該第二半導體層之上,且該第一電極與該絕緣層具有一間距,其中該第一電極更包含一反射層。
- 如請求項10所述之方法,其中該光阻層對該絕緣層之蝕刻更包含一側蝕刻以定義出該間距。
- 如請求項10所述之方法,其中該第一電極至該第二半導體層具有一第一高度及該絕緣層至該第二半導體層具有一第二高度,且 該第一高度與該第二高度相近或該第一高度與該第二高度之差異小於1μm。
- 如請求項10所述之方法,其中更包含形成一第二電極於該第一電極之上,且該第二電極幾乎不覆蓋該絕緣層。
- 如請求項13所述之方法,其中更包含形成一第三電極於該第一半導體層之上。
- 如請求項14所述之方法,其中該第二電極之頂部與該第一半導體層之底部具有一最短距離h1,及該第三電極之頂部與該第一半導體層之底部具有一最短距離h2,且h1與h2之差異小於1μm。
- 如請求項10所述之方法,其中該間距小於3μm。
- 如請求項10所述之方法,其中更包含提供一載板電性連接該第二電極與該第三電極。
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